WorldWideScience

Sample records for charge carrier injection

  1. Influence of injected charge carriers on photocurrents in polymer solar cells

    NARCIS (Netherlands)

    Wehenkel, Dominique J.; Koster, L. Jan Anton; Wienk, Martijn M.; Janssen, Rene A. J.

    2012-01-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for phot

  2. Influence of injected charge carriers on photocurrents in polymer solar cells

    OpenAIRE

    Wehenkel, Dominique J.; Koster, L. Jan Anton; Wienk, Martijn M.; Janssen, Rene A. J.

    2012-01-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for photogeneration and Langevin recombination of electrons and holes. We demonstrate that accounting for the series resistance of the device is essential to determine Jph. Without such correction, the res...

  3. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    CERN Document Server

    Hofmann, Felix J; Lupton, John M

    2016-01-01

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process, or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The resul...

  4. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    Science.gov (United States)

    Hofmann, Felix J.; Vogelsang, Jan; Lupton, John M.

    2016-06-01

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the opposite: the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The results are of interest to developing a microscopic understanding of the intrinsic charge-exciton quenching interaction in devices.

  5. Controlling charge carrier injection in organic electroluminescent devices via ITO substrate modification

    CERN Document Server

    Day, S

    2001-01-01

    and the ITO substrate was found to shift the work function of the electrode, and so modify the barrier to hole injection. Scanning Kelvin probe measurements show that the ITO work function is increased by 0.25 eV with a film of TNAP, while a C sub 6 sub 0 film is found to reduce the work function by a comparable amount. The former has been attributed to a charge-transfer effect resulting in Fermi level alignment between the ITO and the TNAP layer, however the latter is believed to result from both charge transfer and a covalent interaction between C sub 6 sub 0 and ITO. The performance of devices incorporating these modified ITO electrode are rationalised in terms of the work function modification, film thicknesses and the hole transport properties of the two films. Competition between the induced work function change and the increasingly significant tunnelling barrier with thickness means that device performance is not as good as that provided by the SAMs. Direct processing of the ITO substrate has also been...

  6. Analytical Evaluation of the Ratio Between Injection and Space-Charge Limited Currents in Single Carrier Organic Diodes

    OpenAIRE

    Alvarez, Angel Luis; Arredondo, Belen; Romero, Beatriz; Quintana Arregui, Patxi Xabier; Gutierrez Llorente, Araceli; Mallavia, Ricardo; Otón Sánchez, José Manuel

    2008-01-01

    An analytical, complete framework to describe the current-voltage (I-V) characteristics of organic diodes without the use of previous approaches, such as injection or bulk-limited conduction is proposed. Analytical expressions to quantify the ratio between injection and space-charge-limited current from experimental I-V characteristics in organic diodes have been derived. These are used to propose a numerical model in which both bulk transport and injection mechanisms are considered simultane...

  7. Photoinduced Transformation between Charge Carrier and Spin Carrier in Polymers

    Institute of Scientific and Technical Information of China (English)

    MEI Yuan; ZHAO Chang; SUN Xin

    2006-01-01

    By dynamical simulations, we show a transforming process between neutral soliton (spin carrier) and charged soliton (charge carrier) in polymers via photo-excitation, taking a polaron as the transitional bridge. It is photoinduced transformation between spin carrier and charge carrier. In this way, we demonstrate an access for polymers to be applied to spintronics.

  8. Hot carrier injection degradation under dynamic stress

    Institute of Scientific and Technical Information of China (English)

    Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

    2011-01-01

    In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0V and Vd = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

  9. Charge carrier transport in liquid crystals

    International Nuclear Information System (INIS)

    The materials exhibiting charge carrier mobility ranging from 10−3 to 0.1 cm2/Vs, i.e., between those of amorphous and crystalline materials, had been missing before the 1990s when the electronic conduction in liquid crystals was discovered. Since then, various liquid crystalline materials including discotic and calamitic liquid crystals have been studied in order to clarify their charge carrier transport properties in liquid crystalline mesophases. In this article, the historical background of the discovery of electronic conduction in liquid crystals, intrinsic and extrinsic conductions, unique properties of the charge carrier transport, the effect of molecular alignment on it, and the conduction mechanism in liquid crystalline mesophases are shortly described on the basis of the experimental and theoretical studies accumulated in these two decades, noting that the missing materials were liquid crystals. - Highlights: • Liquid crystals exhibit charge mobility ranging from 10–3 to 0.1 cm2/Vs. • Electronic (intrinsic) and ionic (extrinsic) conductions in liquid crystals • Unique charge carrier transport properties in liquid crystals • Effect of molecular alignment in mesophases on charge carrier transport • Conduction mechanism in smectic liquid crystals

  10. Carrier injection dynamics in heterojunction solar cells with bipolar molecule

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Yosuke; Yonezawa, Kouhei [Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8571 (Japan); Yasuda, Takeshi, E-mail: YASUDA.Takeshi@nims.go.jp, E-mail: moritomo.yutaka.gf@u.tsukuba.ac.jp [Photovoltaic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Moritomo, Yutaka, E-mail: YASUDA.Takeshi@nims.go.jp, E-mail: moritomo.yutaka.gf@u.tsukuba.ac.jp [Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8571 (Japan); Center for Integrated Research in Fundamental Science and Engineering (CiRfSE), University of Tsukuba, Tsukuba 305-8571 (Japan)

    2015-03-23

    A boron subphthalocyanine chloride (SubPc) is a bipolar molecule and is used in hetero-junction organic solar cells. Here, we investigated the carrier injection dynamics from the donor α-sexithiophene (6T) or acceptor C{sub 60} layers to the bipolar SubPc layer by means of the femtosecond time-resolved spectroscopy. We observed gradual increase of the SubPc{sup –} (SubPc{sup +}) species within ≈300 ps. The increases are interpreted in terms of the exciton diffusion within the 6T (C{sub 60}) layer and subsequent electron (hole) injection at the interface. In 6T/SubPc heterojunction, the electron injection is observed even at 80 K. The robust electron injection is ascribed to the efficient charge separation within the 6T layer under photo exciation at 400 nm.

  11. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  12. Localized charge carriers in graphene nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Bischoff, D., E-mail: dominikb@phys.ethz.ch; Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, 8093 Zurich (Switzerland)

    2015-09-15

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  13. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  14. Charge injection across a polymeric heterojunction

    NARCIS (Netherlands)

    van Woudenbergh, T; Wildeman, J; Blom, PWM

    2005-01-01

    The charge injection across a polymeric heterojunction of a poly-p-phenylene vinylene derivative (injecting layer) and poly (9,9-dioctylfluorene) (accepting layer) is investigated. The electric field in the accepting layer is obtained after correcting the applied voltage for the voltage drop across

  15. High charge carrier mobility in organic semiconductor diphenylanthracene (DPA)

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Ashutosh; Pflaum, Jens [3. Physikalisches Institut, Pfaffenwaldring 57, Universitaet Stuttgart, 70550 Stuttgart (Germany)

    2007-07-01

    In this work we focus on the growth and the electronic properties of the organic semiconductor 9,10-diphenylanthracene (DPA). DPA consists of two phenyl groups attached at the opposite (9,10)-positions of the anthracene backbone and may be considered similar to rubrene, which shows high field-effect mobility in its (ab)-plane crystal surface. Advantageously, DPA has a substantially low vapor pressure at RT, has a relatively high melting point ({approx}430 K) and is thermally stable upon melting. We have grown DPA single crystals from zone-refined material and analyzed their temperature dependent electronic transport behavior. These ultra-pure single crystals exhibit both electron and hole transport. The high charge carrier mobilities measured by Time-of-Flight (TOF) at RT for electrons ({approx}13 cm{sup 2}/Vs) and holes ({approx}3.7 cm{sup 2}/Vs) make this material a prominent candidate for ambipolar device applications if one overcomes the barrier for charge carrier injection occurring at the metal-DPA-interface. The mobility behavior of holes follows a band-like transport in the high temperature regime (200 K-400 K). Assuming a pure band-like conduction in the low temperature regime, the saturation of the mobility yields a valence bandwidth of the order of 2 meV, which demands for a more sophisticated approach to describe the electronic behavior of DPA.

  16. Distribution of charge carriers in dissipative structure of semiconductors

    CERN Document Server

    Kamilov, I K; Kovalev, A S

    2002-01-01

    It has been shown experimentally that redistribution of the charge carrier concentration takes place in the volume of Te and InSb monocrystals under formation and excitation by the strong field of a dissipative structure in nonequilibrium electron-hole plasma. This leads to a situation when the presence of only longitudinal autosolitons in the dissipative structure reduces the charge carrier concentration outside autosolitons while the presence of only transversal autosolitons makes the charge carriers concentration larger. These effects are explained in the following manner: longitudinal autosolitons, occurring in nonequilibrium electron-hole plasma created by the Joule heating are considered as cold and transversal autosolitons are considered as hot ones

  17. Localization and delocalization of charges injected in DNA

    OpenAIRE

    Heim, Thomas; Melin, Thierry; Deresmes, Dominique; Vuillaume, Dominique

    2004-01-01

    To be published in Appl. Phys. Lett. The electrical properties of DNA molecules are investigated by charge injection and electric force microscopy experiments. Prior to injection, DNA molecules exhibit a weak positively charged state. We probe the electrical behaviour of DNA by measuring the localized or delocalized character of the DNA charge states upon injection of excess charges. We show that injected charges do not delocalize for overstretched DNA prepared by a receding meniscus techn...

  18. Carrier doping by current injection into LaOFFeAs

    Energy Technology Data Exchange (ETDEWEB)

    Lazareva, Irina; Koval, Yury; Steiner, Christian; Mueller, Paul [Department of Physics, Universitaet Erlangen (Germany); Wurmehl, Sabine; Buechner, Bernd [IFW Dresden (Germany); Stuerzer, Tobias; Johrendt, Dirk [Department Chemie, LMU Muenchen (Germany)

    2013-07-01

    Recently, we were able to change the carrier concentration of hole-doped high-T{sub c} superconductors by injection of large currents along the c-axis. We extend this type of experiments to electron-doped pnictides. From our earlier interpretation we should expect that trapping of electrons caused by current injection would decrease the available carrier concentration. Indeed, by various experiments with superconductors from the LaO{sub 1-x}F{sub x}FeAs family we are able to show that trapped electrons caused by current injection perpendicular to the FeAs planes decrease the carrier concentration. We present a spectacular confirmation of this interpretation by the T{sub c} increase by more than 15 K in heavily overdoped La{sub 0.74}F{sub 0.26}FeAs. We performed similar experiments with the recently discovered 1048 layered pnictides of the composition Ca{sub 10}(FeAs){sub 10}(Pt{sub 4}As{sub 8}). The general tendency of carrier doping by trapped electrons was confirmed. A rather interesting discovery was the evolution of hysteretic c-axis IV-characteristics. This is a strong indication of intrinsic Josephson effects. We discuss these results in terms of a change of anisotropy by carrier doping.

  19. Charge injection and transport in fluorene-based copolymers.

    Science.gov (United States)

    Fong, Hon Hang; Malliaras, George G.; Lu, Tianjian; Dunlap, David

    2007-03-01

    Fluorene-based copolymer is considered to be one of the most promising hole transporting and blue light-emitting conjugated polymers used in polymeric light-emitting diodes (PLEDs). Time-of-flight (TOF) technique has been employed to evaluate the charge drift mobility under a temperature range between 200 - 400 K at the thick film regime (1-10 micron). Meanwhile, contact ohmicity is studied by Dark Current Space Charge Limited Conduction (DISCLC) technique. Charge injection efficiencies from different electrical contacts are also studied and the corresponding injection barriers are independently investigated by photoemission and electroabsorption spectroscopies. Results show that the copolymers exhibit non-dispersive charge transport behavior and possess superior mobilities of up to 0.01cm^2V-1s-1 while single-carrier devices from various electrical contacts such as PEDOT:PSS are varied, depending on the chemical structure of amine component in the fluorene-triarylamine copolymers. Results will shed light on the enhancement of device efficiency and stability in the future polymer electronic devices.

  20. Charge carrier coherence and Hall effect in organic semiconductors

    Science.gov (United States)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  1. Photogeneration and recombination of charge carrier pairs and free charge carriers in polymer/fullerene bulk heterojunction films

    Energy Technology Data Exchange (ETDEWEB)

    Sliauzys, Gytis; Gulbinas, Vidmantas [Center for Physical Sciences and Technology, Savanoriu av. 231, 02300 Vilnius (Lithuania); Arlauskas, Kestutis [Department of Solid State Electronics, Vilnius University, Sauletekio al. 9, Build. 3, 10222 Vilnius (Lithuania)

    2012-07-15

    Photo-generation and recombination of free charge carriers in poly-3 (hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) blend films has been studied at different PCBM concentrations by means of fluorescence spectroscopy and transient photocurrent methods. We show that more than 80% of excitons form charge transfer (CT) states at PCBM concentrations above 4%. Efficiency of the CT state dissociation into free charge carries strongly depends on the PCBM concentration; the dissociation efficiency increases more than 30 times when PCBM concentration increases from 1 to 32%. We attribute the strong concentration dependence to formation of PCBM clusters facilitating electron migration and/or delocalization. Reduced charge carrier recombination coefficient has also been observed at high PCBM concentrations. We suggest that this may be partly caused by the reduced stability of reformed Coulombicaly bound charge pairs. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  3. Mobile charge carriers in pulse-irradiated poly- and oligothiophenes

    NARCIS (Netherlands)

    Haas, M.P. de; Laan, G.P. van der; Wegewijs, B.; Leeuw, D.M. de; Bäuerle, P.; Rep, D.B.A.; Fichou, D.

    1999-01-01

    Lower limits of the intrinsic charge carrier mobility in the solid phase of a series of oligothiophene compounds were determined with the pulse-radiolysis time-resolved microwave conductivity technique, PR-TRMC. The mobility values fall roughly into two regimes and show no correlation with the numbe

  4. Injectable nanomaterials for drug delivery: carriers, targeting moieties, and therapeutics.

    Science.gov (United States)

    Webster, David M; Sundaram, Padma; Byrne, Mark E

    2013-05-01

    Therapeutics such as nucleic acids, proteins/peptides, vaccines, anti-cancer, and other drugs have disadvantages of low bio-availability, rapid clearance, and high toxicity. Thus, there is a significant need for the development of efficient delivery methods and carriers. Injectable nanocarriers have received much attention due to their vast range of structures and ability to contain multiple functional groups, both within the bulk material and on the surface of the particles. Nanocarriers may be tailored to control drug release and/or increase selective cell targeting, cellular uptake, drug solubility, and circulation time, all of which lead to a more efficacious delivery and action of therapeutics. The focus of this review is injectable, targeted nanoparticle drug delivery carriers highlighting the diversity of nanoparticle materials and structures as well as highlighting current therapeutics and targeting moieties. Structures and materials discussed include liposomes, polymersomes, dendrimers, cyclodextrin-containing polymers (CDPs), carbon nanotubes (CNTs), and gold nanoparticles. Additionally, current clinical trial information and details such as trial phase, treatment, active drug, carrier sponsor, and clinical trial identifier for different materials and structures are presented and discussed.

  5. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy

    Science.gov (United States)

    Ponseca, C. S., Jr.; Sundström, V.

    2016-03-01

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  6. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy.

    Science.gov (United States)

    Ponseca, C S; Sundström, V

    2016-03-28

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  7. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility.

    Science.gov (United States)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters. PMID:19044876

  8. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility

    Science.gov (United States)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

  9. Surface acoustic wave mediated carrier injection into individual quantum post nano emitters

    International Nuclear Information System (INIS)

    Acousto-electric charge conveyance induced by a surface acoustic wave (SAW) is employed to dissociate photogenerated excitons. Over macroscopic distances, both electrons and holes are injected sequentially into a remotely positioned, isolated and high quality quantum emitter, a self-assembled quantum post. This process is found to be highly efficient and to exhibit improved stability at high acoustic powers when compared to direct optical pumping at the position of the quantum post. These characteristics are attributed to the wide matrix quantum well in which charge conveyance occurs and to the larger number of carriers available for injection in the remote configuration, respectively. The emission of such pumped quantum posts is dominated by recombination of neutral excitons and fully directional when the propagation direction of the SAW and the position of the quantum post are reversed. (paper)

  10. Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.H.; Gul, R.; and James, R.B.

    2010-10-26

    The behavior of the internal electric-field of nuclear-radiation detectors substantially affects the detector's performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of detector, other than the portion near the cathode. Such a space-charge region originates from serious hole-trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5 C to 35 C, its width expanded from about 1/6 to 1/2 of the total depth of the detector.

  11. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    Science.gov (United States)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  12. A charge carrier transport model for donor-acceptor blend layers

    International Nuclear Information System (INIS)

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C60 in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (Et = 0.14 eV, Nt = 1.2 × 1018 cm−3) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer

  13. Spontaneous Charge Carrier Localization in Extended One-Dimensional Systems

    Science.gov (United States)

    Vlček, Vojtěch; Eisenberg, Helen R.; Steinle-Neumann, Gerd; Neuhauser, Daniel; Rabani, Eran; Baer, Roi

    2016-05-01

    Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects, or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally tuned range-separated density functional theory and many-body perturbation calculations within the G W approximation reveal that in trans-polyacetylene and polythiophene the hole density localizes on a length scale of several nanometers. This is due to exchange-induced translational symmetry breaking of the charge density. Ionization potentials, optical absorption peaks, excitonic binding energies, and the optimally tuned range parameter itself all become independent of polymer length as it exceeds the critical localization length. Moreover, we find that lattice disorder and the formation of a polaron result from the charge localization in contrast to the traditional view that lattice distortions precede charge localization. Our results can explain experimental findings that polarons in conjugated polymers form instantaneously after exposure to ultrafast light pulses.

  14. The Stability and Charge Carriers in Bilayer Silicene

    OpenAIRE

    Rui, Wang; Shaofeng, Wang; Xiaozhi, Wu

    2013-01-01

    The structure optimization, phonon, and ab initio ?nite temperature molecular dynamics calculations have been performed to predict that bilayer silicene has stable structure with AB stacking geometry and is more favorable energetically to synthesize than monolayer silicene, a two-dimensional honeycomb lattice with buckled geometry. Marvellously, its electronic bands show that the charge carriers behave like relativistic Dirac fermions with linear energy dispersions near the K points. An insig...

  15. Pressure effect on charge carrier mobility in SmS

    International Nuclear Information System (INIS)

    Dependences of the charge carrier mobility on the pressure of hydrostatic compression for samarium monosulfide minocrystals and some solid solutions on its base in the pressure range from the atmospheric to critical pressures of the semiconductor-metal phase transition at T=300K are investigated. The behaviour of the factor in SmS under pressure is calculated from the experimental data on the pressure dependence of the Hall constant and thermo-e.m.f

  16. Charge carrier coherence and Hall effect in organic semiconductors

    OpenAIRE

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experimen...

  17. Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

    CERN Document Server

    Kazakevich, L A

    2003-01-01

    It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

  18. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    International Nuclear Information System (INIS)

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices

  19. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Science.gov (United States)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  20. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

    2015-07-07

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  1. Charge-carrier dynamics and Coulomb effects in semiconductor tetrapods

    International Nuclear Information System (INIS)

    In this thesis the Coulomb interaction and its influence on localization effects and dynamics of charge carriers in semiconductor nanocrystals were studied. In the studied nanostructures it deals with colloidal tetrapod heterostructures, which consist of a cadmium selenide (CdSe) core and four tetraedrical grown cadmium sulfide (CdS) respectively cadmium telluride (CdTe) legs, which exhibit a type-I respectively type-II band transition. The dynamics and interactions were studied by means of photoluminescence (PL) and absorption measurements both on the ensemble and on single nanoparticles, as well as time-resolved PL and transient absorption spectroscopy. Additionally theoretical simulations of the wave-function distributions were performed, which are based on the effective-mass approximation. The special band structure of the CdSe/CdS tetrapods offers a unique possibility to study the Coulomb interaction. The flat conduction band in these heterostructures makes the electron via the Coulomb interaction sensitive to the localization position of the hole within the structure. The valence band has instead a potential maximum in the CdSe, which leads to a directed localization of the hole and the photoluminescence of the core. Polarization-resolved measurements showed hereby an anisotropy of the photoluminescence, which could be explained by means of simulations of the wave-function distribution with an asymmetry at the branching point. Charge-carrier localization occur mainly both in longer structures and in trap states in the CdS leg and can be demonstrated in form of a dual emission from a nanocrystal. The charge-carrier dynamics of electron and hole in tetrapods is indeed coupled by the Coulomb interaction, however it cannot be completely described in an exciton picture. The coupled dynamics and the Coulomb interaction were studied concerning a possible influence of the geometry in CdSe/CdS nanorods and compared with those of the tetrapods. The interactions of the

  2. Kinetics of photo-activated charge carriers in Sn:CdS

    Science.gov (United States)

    Patidar, Manju Mishra; Panda, Richa; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V.

    2016-05-01

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd1-xSnxS (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ1, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  3. Profiling of the injected charge drift current transients by cross-sectional scanning technique

    Energy Technology Data Exchange (ETDEWEB)

    Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.; Baskevicius, A. [Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius (Lithuania)

    2014-02-07

    The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.

  4. Profiling of the injected charge drift current transients by cross-sectional scanning technique

    Science.gov (United States)

    Gaubas, E.; Ceponis, T.; Pavlov, J.; Baskevicius, A.

    2014-02-01

    The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.

  5. Profiling of the injected charge drift current transients by cross-sectional scanning technique

    International Nuclear Information System (INIS)

    The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current

  6. Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process.

    Science.gov (United States)

    Villeneuve-Faure, C; Makasheva, K; Boudou, L; Teyssedre, G

    2016-06-17

    Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

  7. Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process

    Science.gov (United States)

    Villeneuve-Faure, C.; Makasheva, K.; Boudou, L.; Teyssedre, G.

    2016-06-01

    Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

  8. Improved charge carrier separation in barium tantalate composites investigated by laser flash photolysis.

    Science.gov (United States)

    Schneider, Jenny; Nikitin, Konstantin; Wark, Michael; Bahnemann, Detlef W; Marschall, Roland

    2016-04-20

    Charge carrier dynamics in phase pure Ba5Ta4O15 and in a Ba5Ta4O15-Ba3Ta5O15 composite have been studied by means of diffuse reflectance laser flash photolysis spectroscopy in the presence and absence of an electron donor, in order to reveal the reason for the improved photocatalytic performance of the latter. For the first time the transient absorption of trapped electrons with a maximum at around 650 nm and of trapped holes with a transient absorption maximum at around 310 nm is reported for tantalates. The decay kinetics of the photogenerated charge carriers could be fitted by second order reaction kinetics, and the direct recombination of the trapped electrons with the trapped holes was proven. In the absence of an electron donor, no difference in the decay behavior between the phase pure material and the composite material is found. In the presence of methanol, for the pure phase Ba5Ta4O15 the recombination of the charge carriers could not be prevented and the trapped electrons also recombine with the ˙CH2OH radical formed via the methanol oxidation by the trapped holes. However, in the composite, the electron can be stored in the system, the ˙CH2OH radical injects an electron into the conduction band of the second component of the composite, i.e., Ba3Ta5O15. Thus, the electrons are available for an extended period to induce reduction reactions. PMID:26732364

  9. Extracting electrode space charge limited current: Charge injection into conjugated polyelectrolytes with a semiconductor electrode

    Science.gov (United States)

    Walker, Ethan M.; Lonergan, Mark C.

    2016-05-01

    Conjugated polyelectrolytes and related mixed ionic-electronic conductors (MIECs) are being explored for energy applications including solid-state lighting and photovoltaics. Fundamental models of charge injection into MIECs have been primarily developed for MIECs contacted with highly conductive or metal electrodes (MEs), despite many potential applications involving semiconductors. We theoretically and experimentally demonstrate that an appropriate semiconductor electrode (SE), n-type for electron or p-type of hole injection, can limit injection into MIECs. When the SE is the injecting electrode and is under accumulation, there is little difference from a ME. When the SE acts as the extracting electrode, however, injection into the MIEC can be limited because a fraction of any applied bias must support charge depletion in the semiconductor rather than charge injection into the MIEC. In a ME/MIEC/SE system, this can lead to significant asymmetry in current-voltage and injected charge-voltage behavior.

  10. Charge carrier dissociation and recombination in polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deibel, Carsten [Experimental Physics VI, Julius-Maximilians-University of Wuerzburg, 97074 Wuerzburg (Germany)

    2009-12-15

    In polymer:fullerene solar cells, the origin of the losses in the field-dependent photocurrent is still controversially debated. We contribute to the ongoing discussion by performing photo-induced charge extraction measurements on poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C{sub 61} butyric acid methyl ester solar cells in order to investigate the processes ruling charge carrier decay. Calculating the drift length of photogenerated charges, we find that polaron recombination is not limiting the photocurrent for annealed devices. Additionally, we applied Monte Carlo simulations on blends of conjugated polymer chain donors with acceptor molecules in order to gain insight into the polaron pair dissociation. The dissociation yield turns out to be rather high, with only a weak field dependence. With this complementary view on dissociation and recombination, we stress the importance of accounting for polaron pair dissociation, polaron recombination as well as charge extraction when considering the loss mechanisms in organic solar cells. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  11. Polaron mass of charge carriers in semiconductor quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Maslov, A. Yu., E-mail: maslov.ton@mail.ioffe.ru; Proshina, O. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  12. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  13. Dynamics of charge carriers on hexagonal nanoribbons with vacancy defects

    Science.gov (United States)

    Ferreira da Cunha, Wiliam; de Oliveira Neto, Pedro Henrique; Terai, Akira; Magela e Silva, Geraldo

    2016-07-01

    We develop a general model to investigate the dynamics of charge carriers in vacancy endowed honeycomb two-dimensional nanolattices. As a fundamental application, results concerning the influence of vacancies placed on different sites of semiconducting armchair graphene nanoribbons (AGNR) over the transport of polarons are presented. It is observed that the positioning of vacancies plays a major role over the scattering of the charge carriers, in the sense that their overall mobility is determined by where the defect is allocated. By considering different structural configurations of the system, the arising polaron can either move freely or be reflected. Therefore, our work provides a phenomenological understanding of the underlying mechanism responsible for the change of conductivity experienced by systems in which structural defects are present, a fact that has been reported for different nanostructures of the same symmetry. Because vacancies are one of the most common kinds of defects and are, in practice, unavoidable, the kind of description proposed in the present paper is crucial to correctly address transport and electronic properties in more realistic electronic devices based on two-dimensional nanolattices.

  14. Tuning The Optical, Charge Injection, and Charge Transport Properties of Organic Electronic Devices

    Science.gov (United States)

    Zalar, Peter

    Since the early 1900's, synthetic insulating polymers (plastics) have slowly taken over the role that traditional materials like wood or metal have had as basic components for construction, manufactured goods, and parts. Plastics allow for high throughput, low temperature processing, and control of bulk properties through molecular modifications. In the same way, pi-conjugated organic molecules are emerging as a possible substitute for inorganic materials due to their electronic properties. The semiconductive nature of pi-conjugated materials make them an attractive candidate to replace inorganic materials, primarily due to their promise for low cost and large-scale production of basic semiconducting devices such as light-emitting diodes, solar cells, and field-effect transistors. Before organic semiconductors can be realized as a commercial product, several hurdles must be cleared. The purpose of this dissertation is to address three distinct properties that dominate the functionality of devices harnessing these materials: (1) optical properties, (2) charge injection, and (3) charge transport. First, it is shown that the electron injection barrier in the emissive layer of polymer light-emitting diodes can be significantly reduced by processing of novel conjugated oligoelectrolytes or deoxyribonucleic acid atop the emissive layer. Next, the charge transport properties of several polymers could be modified by processing them from solvents containing small amounts of additives or by using regioregular and enantiopure chemical structures. It is then demonstrated that the optical and electronic properties of Lewis basic polymer structures can be readily modified by interactions with strongly electron-withdrawing Lewis acids. Through red-shifted absorption, photoluminescence, and electroluminescence, a single pi-conjugated backbone can be polychromatic. In addition, interaction with Lewis acids can remarkably p-dope the hole transport of the parent polymer, leading to a

  15. Charge Injection From Carbon Nanofibers Into Hexane Under Ambient Conditions

    NARCIS (Netherlands)

    Agiral, A.; Eral, H.B.; Ende, van den D.; Gardeniers, J.G.E.

    2011-01-01

    The observation of charge injection from carbon nanofibers (CNFs) into liquid hexane under ambient conditions is reported. A CNF-coated electrode and a counter electrode are brought into micrometer proximity in a quasi-parallel geometry using a strain-gauge-based proximity sensor. Controlled charge

  16. Charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene): Effects of carrier bimolecular recombination and trapping

    Science.gov (United States)

    Soci, Cesare; Moses, Daniel; Xu, Qing-Hua; Heeger, Alan J.

    2005-12-01

    We have studied the charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene) over a broad time range using fast (t>100ps) transient photoconductivity measurements. The carrier density was also monitored (t>100fs) by means of photoinduced absorption probed at the infrared active vibrational modes. We find that promptly upon charge-carrier photogeneration, the initial polaron dynamics is governed by bimolecular recombination, while later in the subnanosecond time regime carrier trapping gives rise to an exponential decay of the photocurrent. The more sensitive transient photocurrent measurements indicate that in the low excitation regime, when the density of photocarriers is comparable to that of the trapping states (˜1016cm-3) , carrier hopping between traps along with transport via extended states determines the carrier relaxation, a mechanism that is manifested by a long-lived photocurrent “tail.” This photocurrent tail is reduced by lowering the temperature and/or by increasing the excitation density. Based on these data, we develop a comprehensive kinetic model that takes into account the bipolar charge transport, the free-carrier bimolecular recombination, the carrier trapping, and the carrier recombination involving free and trapped carriers.

  17. Charge carrier rearrangement in spinel crystals irradiated at low temperatures

    International Nuclear Information System (INIS)

    The results of an investigation of thermoluminescence (TL) in nominally pure MgAl2O4 spinel single crystals in the temperature range between 80-670 K are presented. For a heating rate of 0.21 K/s, TL spectra exhibit glow peaks in three distinct temperature ranges: 100-160, 270-370 and 470-670 K. The most prominent peaks are at 115, 140, 305, 335, 525, 570 and 605 K. The locations of the temperature maxima, as well as the intensity of the peaks, vary depending on the treatment of the crystals, the type of irradiation and the temperature of irradiation. Measurements of the glow peaks at different emission wavelengths and the use of partial bleaching and isothermal decay techniques for TL, allowed us to propose mechanisms for charge carrier rearrangement at lattice defects and impurity ions, during irradiation and subsequent heating

  18. Fractal spectrum of charge carriers in quasiperiodic graphene structures

    Energy Technology Data Exchange (ETDEWEB)

    Sena, S H R; Pereira Jr, J M; Farias, G A [Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, Campus do Pici, 60455-900 Fortaleza, CE (Brazil); Vasconcelos, M S [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil); Albuquerque, E L, E-mail: pereira@fisica.ufc.b, E-mail: eudenilson@gmail.co [Departamento de Biofisica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil)

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  19. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  20. Improved charge injection of pentacene transistors by immobilizing DNA on gold source-drain electrodes

    Science.gov (United States)

    Gui, Haiyang; Wei, Bin; Zhang, Jianhua; Wang, Jun

    2014-06-01

    We successfully optimized the charge injection of pentacene-based organic thin-film transistors with bottom contact by immobilizing deoxyribonucleic acid (DNA) on gold electrodes. The single-stranded DNA having mercapto group (-SH) was used as the modified layer by molecular self-assembly onto the surface of gold electrodes. The threshold voltage is -10 V, and the field-effect mobility reaches 0.34 cm2/V s, which is comparable with that of typical top-contact devices. Mechanism of performance improvement is due to the high carrier density in contact region attracted by the phosphate group on the DNA backbone increasing the tunneling probability for improved charge injection. Furthermore, the introduction of modified layer significantly enhanced the grain size of pentacene that is beneficial for charge transport, which also is responsible for the improved device performances.

  1. Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sandwiched structure.

    Science.gov (United States)

    Xu, Jie; Xu, Jun; Zhang, Pengzhan; Li, Wei; Chen, Kunji

    2013-10-21

    Si nanocrystals are formed by using KrF pulsed laser crystallization of an amorphous SiC/ultrathin amorphous Si/amorphous SiC sandwiched structure. Electrons and holes are injected into Si nanocrystals via a biased conductive AFM tip and the carrier decay and transportation behaviours at the nanoscale are studied by joint characterization techniques of Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (CAFM). Quantification of the surface charge density is realized by solving the Poisson equation based on KPFM measurements. Besides, the asymmetric barrier height for electrons and holes is considered to play a dominant role in controlling the charge retention and transportation characteristics. The methodology developed in this work is promising for studying the charge injection and transportation process in other materials and structures at the nanoscale.

  2. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    Science.gov (United States)

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature. PMID:27367397

  3. Charge carrier transport properties in layer structured hexagonal boron nitride

    Science.gov (United States)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0)-α with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  4. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  5. Ultrafast charge carrier dynamics in Au/semiconductor nanoheterostructures

    Science.gov (United States)

    Lambright, Scott

    The charge carrier dynamics in several Au/semiconductor core/shell heterostructures were examined. Firstly, Au/CdS core/shell nanocomposites were synthesized in a four step procedure culminating in a cation exchange performed on the shell. Previous studies of the ultrafast carrier dynamics in Au/CdS nanocomposites with epitaxial boundary regions reported the suppression of plasmon character in transient absorption spectra accompanied by broadband photoinduced absorption. The coupling of electron wavefunctions with lattice defects at the boundary of the two domains has been blamed for these phenomena. In the current study, transmission electron micrographs of Au/CdS synthesized using cation exchange showed no evidence of strain on the lattice of either component, while femtosecond transient absorption data show the retention of bleach regions attributed to CdS's 1S(e)-1S3/2(h) transition and Au's plasmon resonance. Accelerated rates of bleach recovery for both excitations ( tauexiton ≈ 300 ps, tauplasmon ≈ .7 ps) indicated that the interaction of Au and CdS domains leads to faster relaxation to their respective photoexcitations when compared to relaxation times in isolated Au and CdS nanoparticles. It was believed that the Au/CdS boundary was non-epitaxial in the presented core/shell nanocomposites. Secondly, these non-epitaxial Au/CdS core/shells were subsequently used to demonstrate near-field energy transfer from 5 nm diameter Au cores to CdS-encapsulated CdSe quantum dots. To this end, Au/CdS and CdSe/CdS nanocrystals were embedded in semiconductor-matrix-encapsulated-nanocrystal-arrays (SMENA) together. The encapsulation of both domains in the high band-gap semiconductor CdS was a means to suppress charge transfer between the two nanoparticles. The fluorescence intensity in these films was enhanced 6-fold in some cases as a result of the presence of Au domains. It was also demonstrated that the fluorescence enhancement was independent of the potential

  6. Quantifying the efficiency of electrodes for positive carrier injection into poly(9,9-dioctylfluorene) and representative copolymers

    Science.gov (United States)

    Campbell, Alasdair J.; Bradley, Donal D. C.; Antoniadis, Homer

    2001-03-01

    The perfect injecting contact for any semiconductor device is, by definition, an ohmic contact. When such a contact is made to an organic semiconductor the current density is limited by bulk space-charge effects. In the absence of charge carrier traps, J reaches the ultimate, trap-free, space-charge-limited value, JTFSCLC=(9/8)εμV2/d3. Knowledge of the mobility μ, permittivity ε, applied bias V, and film thickness d, thus allows the maximum possible current density to be calculated. The absolute injection efficiency of any specific contact can then be quantified via a figure of merit, χ=J/JTFSCLC, namely the ratio of the actual current density to that expected for the ideal trap-free, space-charge-limited current. In this article we report on the injection efficiency of positive carriers into poly(9,9-dioctylfluorene) (PFO) and two representative copolymers, poly(9,9-diocytlfluorene-co-bis-N,N'-(4-methoxyphenyl)-bis-N, N'-phenyl-1,4-phenylenediamine) (PFMO) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (BT). Time-of-flight photocurrent, dark injection transient current, and current density-voltage (J-V) measurements were each performed on indium tin oxide (ITO)/polymer/Au or Al diode structures. The hole injection efficiency of various pretreated ITO electrodes and of the top Au and Al contacts was investigated. ITO coated glass substrates were cleaned by washing with solvents and then either not subjected to further treatment (untreated), exposed to an oxygen plasma (O2 plasma), or coated in a poly(ethylenedioxythiophene)/polystyrenesulphonic acid (PEDOT/PSS) blend. The steady-state J-V characteristics for the different device structures were compared to the expected JTFSCLC and the figure of merit χ was calculated. At an applied field of 5×105V/cm, the absolute injection efficiencies of holes into PFMO (ionization potential, Ip=4.98 eV) from untreated, O2 plasma treated, and PEDOT/PSS treated ITO were found to be χ=10-3, 1, and 1, respectively. For

  7. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NARCIS (Netherlands)

    Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; De Leeuw, D.M.; Michels, M.A.J.

    2005-01-01

    From a numerically exact solution of the Master equation for hoppingtransport in a disordered energy landscape with a Gaussian densityof states, we determine the dependence on temperature, carrier density, and electric field of the charge carrier mobility. Experimentalspace-charge limited currents i

  8. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    Science.gov (United States)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  9. Laser-Assisted H- Charge Exchange Injection in Magnetic Fields

    Energy Technology Data Exchange (ETDEWEB)

    Gorlov, Timofey V [ORNL; Danilov, Viatcheslav V [ORNL; Shishlo, Andrei P [ORNL

    2010-01-01

    The use of stripping foils for charge exchange injection can cause a number of operational problems in high intensity hadron accelerators. A recently proposed three-step method of laser-assisted injection is capable of overcoming these problems. This paper presents advances in the physical model of laser-assisted charge exchange injection of H- beams and covers a wide field of atomic physics. The model allows the calculation of the evolution of an H0 beam taking into account spontaneous emission, field ionization and external electromagnetic fields. Some new data on the hydrogen atom related to the problem are calculated. The numerical calculations in the model use realistic descriptions of laser field and injection beam. Generally, the model can be used for design and optimization of a laser-assisted injection cell within an accelerator lattice. Example calculations of laser-assisted injection for an intermediate experiment at SNS in Oak Ridge and for the PS2 accelerator at CERN are presented. Two different schemes, distinctively characterized by various magnetic fields at the excitation point, are discussed. It was shown that the emittance growth of an injected beam can be drastically decreased by moving excitation point into a strong magnetic field.

  10. Laser-assisted H- charge exchange injection in magnetic fields

    Science.gov (United States)

    Gorlov, T.; Danilov, V.; Shishlo, A.

    2010-05-01

    The use of stripping foils for charge exchange injection can cause a number of operational problems in high intensity hadron accelerators. A recently proposed three-step method of laser-assisted injection is capable of overcoming these problems. This paper presents advances in the physical model of laser-assisted charge exchange injection of H- beams and covers a wide field of atomic physics. The model allows the calculation of the evolution of an H0 beam taking into account spontaneous emission, field ionization, and external electromagnetic fields. Some new data on the hydrogen atom related to the problem are calculated. The numerical calculations in the model use realistic descriptions of laser field and injection beam. Generally, the model can be used for design and optimization of a laser-assisted injection cell within an accelerator lattice. Example calculations of laser-assisted injection for an intermediate experiment at SNS in Oak Ridge and for the PS2 accelerator at CERN are presented. Two different schemes, distinctively characterized by various magnetic fields at the excitation point, are discussed. It was shown that the emittance growth of an injected beam can be drastically decreased by moving the excitation point into a strong magnetic field.

  11. Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors

    Institute of Scientific and Technical Information of China (English)

    REN Jun-Feng; XIU Ming-Xia

    2008-01-01

    Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-Rip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interfacial resistances, and the balk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.

  12. Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers

    OpenAIRE

    Turyanska, L.; A. Baumgartner; Chaggar, A.; Patane, A; Eaves, L.; Henini, M.

    2006-01-01

    We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection and light emission from a small number of individual dots within a large ensemble. We also show that the extent of carrier energy relaxation prior to recombination can be controlled by tailoring the morp...

  13. Charge carrier tunneling in the light-emitting diodes of poly (p-phenylene) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, J. W.; Kang, G. W.; Lee, C. H. [Inha Univ., Inchon (Korea, Republic of); Song, W. J.; Seoul, C. [Inha Univ., Inchon (Korea, Republic of)

    2000-06-01

    We have studied the temperature dependence of the current-voltage (I-V) and the electroluminescence-voltage (EL-V) characteristics in the blue light-emitting diodes of vacuum-deposited poly (p-phenylene) (PPP) thin films in the temperature range between 14 and 290 K. The onset of the EL occurs at an electric field of about 7x10{sup 7} V/m, independent of the thickness of the PPP layer. The I-V and EL-V dependences show very weak temperature dependences and fit very well with the Fowler-Nordheim tunneling formula. The results suggest that charge carrier injection is a tunneling process through an energy barrier of about 0.6{approx}0.8 eV in indium tin oxide (ITO)/PPP/Al devices.

  14. Charge carrier tunneling in the light-emitting diodes of poly (p-phenylene) thin films

    CERN Document Server

    Jeon, J W; Lee, C H; Song, W J; Seoul, C

    2000-01-01

    We have studied the temperature dependence of the current-voltage (I-V) and the electroluminescence-voltage (EL-V) characteristics in the blue light-emitting diodes of vacuum-deposited poly (p-phenylene) (PPP) thin films in the temperature range between 14 and 290 K. The onset of the EL occurs at an electric field of about 7x10 sup 7 V/m, independent of the thickness of the PPP layer. The I-V and EL-V dependences show very weak temperature dependences and fit very well with the Fowler-Nordheim tunneling formula. The results suggest that charge carrier injection is a tunneling process through an energy barrier of about 0.6 approx 0.8 eV in indium tin oxide (ITO)/PPP/Al devices.

  15. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  16. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  17. Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors.

    Science.gov (United States)

    Xie, Wei; Prabhumirashi, Pradyumna L; Nakayama, Yasuo; McGarry, Kathryn A; Geier, Michael L; Uragami, Yuki; Mase, Kazuhiko; Douglas, Christopher J; Ishii, Hisao; Hersam, Mark C; Frisbie, C Daniel

    2013-11-26

    We have examined the significant enhancement of ambipolar charge injection and transport properties of bottom-contact single crystal field-effect transistors (SC-FETs) based on a new rubrene derivative, bis(trifluoromethyl)-dimethyl-rubrene (fm-rubrene), by employing carbon nanotube (CNT) electrodes. The fundamental challenge associated with fm-rubrene crystals is their deep-lying HOMO and LUMO energy levels, resulting in inefficient hole injection and suboptimal electron injection from conventional Au electrodes due to large Schottky barriers. Applying thin layers of CNT network at the charge injection interface of fm-rubrene crystals substantially reduces the contact resistance for both holes and electrons; consequently, benchmark ambipolar mobilities have been achieved, reaching 4.8 cm(2) V(-1) s(-1) for hole transport and 4.2 cm(2) V(-1) s(-1) for electron transport. We find that such improved injection efficiency in fm-rubrene is beneficial for ultimately unveiling its intrinsic charge transport properties so as to exceed those of its parent molecule, rubrene, in the current device architecture. Our studies suggest that CNT electrodes may provide a universal approach to ameliorate the charge injection obstacles in organic electronic devices regardless of charge carrier type, likely due to the electric field enhancement along the nanotube located at the crystal/electrode interface. PMID:24175573

  18. Photogeneration and dynamics of charge carriers in the conjugated polymer poly(3-hexylthiophene)

    NARCIS (Netherlands)

    Dicker, G.

    2004-01-01

    The conjugated polymer poly(3-hexylthiophene) is a promising candidate for applications in organic thin-film electronic and optoelectronic devices. This dissertation addresses fundamental issues regarding the photogeneration and recombination dynamics of charge carriers in this polymer. Measurements

  19. Unified description of charge-carrier mobilities in disordered semiconducting polymers

    NARCIS (Netherlands)

    Pasveer, WF; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, PA; Blom, PWM; de Leeuw, DM; Michels, MAJ

    2005-01-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in d

  20. Method and Circuit for Injecting a Precise Amount of Charge onto a Circuit Node

    Science.gov (United States)

    Hancock, Bruce R. (Inventor)

    2016-01-01

    A method and circuit for injecting charge into a circuit node, comprising (a) resetting a capacitor's voltage through a first transistor; (b) after the resetting, pre-charging the capacitor through the first transistor; and (c) after the pre-charging, further charging the capacitor through a second transistor, wherein the second transistor is connected between the capacitor and a circuit node, and the further charging draws charge through the second transistor from the circuit node, thereby injecting charge into the circuit node.

  1. Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

    Energy Technology Data Exchange (ETDEWEB)

    Berrada, Salim, E-mail: s.berrada@insa.ueuromed.org; Bescond, Marc, E-mail: marc.bescond@im2np.fr; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel [IM2NP UMR CNRS 7334, Aix-Marseille Université, Technopôle de Château Gombert, 60 Rue Frédéric Joliot Curie, Bâtiment Néel,13453 Marseille (France)

    2015-10-12

    This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

  2. Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons.

    Science.gov (United States)

    Natterer, Fabian D; Zhao, Yue; Wyrick, Jonathan; Chan, Yang-Hao; Ruan, Wen-Ying; Chou, Mei-Yin; Watanabe, Kenji; Taniguchi, Takashi; Zhitenev, Nikolai B; Stroscio, Joseph A

    2015-06-19

    The observation of phonons in graphene by inelastic electron tunneling spectroscopy has been met with limited success in previous measurements arising from weak signals and other spectral features which inhibit a clear distinction between phonons and miscellaneous excitations. Utilizing a back-gated graphene device that allows adjusting the global charge carrier density, we introduce an averaging method where individual tunneling spectra at varying charge carrier density are combined into one representative spectrum. This method improves the signal for inelastic transitions while it suppresses dispersive spectral features. We thereby map the total graphene phonon density of states, in good agreement with density functional calculations. Unexpectedly, an abrupt change in the phonon intensity is observed when the graphene charge carrier type is switched through a variation of the back-gate electrode potential. This sudden variation in phonon intensity is asymmetric in the carrier type, depending on the sign of the tunneling bias.

  3. The state of itinerant charge carriers and thermoelectric effects in correlated oxide metals

    International Nuclear Information System (INIS)

    We analyzed the physics of transport processes and, in particular, the thermoelectric power in the mercurocuprates and other cuprates to get a better insight into the state of the carriers in these compounds. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed. The experimental studies of thermoelectric power showed that the state of carriers in cuprates can be influenced by many complicated scattering processes, however the underlying mechanism for the linear decreasing of the TEP with increasing the temperature for most hole-doped HTSC cuprates is still not yet known. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed for a few models of charge transport. A comparison between the analytical and experimental results is also made. It is concluded that the crucial factor for the understanding of the transport properties of correlated oxide metals is the nature of itinerant charge carriers, i.e. renormalized quasiparticles. (author)

  4. 75 FR 18255 - Passenger Facility Charge Database System for Air Carrier Reporting

    Science.gov (United States)

    2010-04-09

    ... Federal Aviation Administration Passenger Facility Charge Database System for Air Carrier Reporting AGENCY... interested parties of the availability of the Passenger Facility Charge (PFC) database system to report PFC... public agency. The FAA has developed a national PFC database system in order to more easily track the...

  5. Slower carriers limit charge generation in organic semiconductor light-harvesting systems

    Science.gov (United States)

    Stolterfoht, Martin; Armin, Ardalan; Shoaee, Safa; Kassal, Ivan; Burn, Paul; Meredith, Paul

    2016-01-01

    Blends of electron-donating and -accepting organic semiconductors are widely used as photoactive materials in next-generation solar cells and photodetectors. The yield of free charges in these systems is often determined by the separation of interfacial electron–hole pairs, which is expected to depend on the ability of the faster carrier to escape the Coulomb potential. Here we show, by measuring geminate and non-geminate losses and key transport parameters in a series of bulk-heterojunction solar cells, that the charge-generation yield increases with increasing slower carrier mobility. This is in direct contrast with the well-established Braun model where the dissociation rate is proportional to the mobility sum, and recent models that underscore the importance of fullerene aggregation for coherent electron propagation. The behaviour is attributed to the restriction of opposite charges to different phases, and to an entropic contribution that favours the joint separation of both charge carriers. PMID:27324720

  6. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...... by a factor of five. Charge trapping and space charge formation were modified by the introduction of titanium dioxide...

  7. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    Science.gov (United States)

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V

  8. Switchable Charge Injection Barrier in an Organic Supramolecular Semiconductor.

    Science.gov (United States)

    Gorbunov, Andrey V; Haedler, Andreas T; Putzeys, Tristan; Zha, R Helen; Schmidt, Hans-Werner; Kivala, Milan; Urbanavičiu̅tė, Indre; Wübbenhorst, Michael; Meijer, E W; Kemerink, Martijn

    2016-06-22

    We disclose a supramolecular material that combines semiconducting and dipolar functionalities. The material consists of a discotic semiconducting carbonyl-bridged triarylamine core, which is surrounded by three dipolar amide groups. In thin films, the material self-organizes in a hexagonal columnar fashion through π-stacking of the molecular core and hydrogen bonding between the amide groups. Alignment by an electrical field in a simple metal/semiconductor/metal geometry induces a polar order in the interface layers near the metal contacts that can be reversibly switched, while the bulk material remains nonpolarized. On suitably chosen electrodes, the presence of an interfacial polarization field leads to a modulation of the barrier for charge injection into the semiconductor. Consequently, a reversible switching is possible between a high-resistance, injection-limited off-state and a low-resistance, space-charge-limited on-state. The resulting memory diode shows switchable rectification with on/off ratios of up to two orders of magnitude. This demonstrated multifunctionality of a single material is a promising concept toward possible application in low-cost, large-area, nonvolatile organic memories. PMID:27246280

  9. Controlled Electron Injection into Plasma Accelerators and Space Charge Estimates

    International Nuclear Information System (INIS)

    Plasma based accelerators are capable of producing electron sources which are ultra-compact (a few microns) and high energies (up to hundreds of MeVs) in much shorter distances than conventional accelerators. This is due to the large longitudinal electric field that can be excited without the limitation of breakdown as in RF structures.The characteristic scale length of the accelerating field is the plasma wavelength and for typical densities ranging from 1018 - 1019 cm-3, the accelerating fields and scale length can hence be on the order of 10-100GV/m and 10-40 mu m, respectively. The production of quasimonoenergetic beams was recently obtained in a regime relying on self-trapping of background plasma electrons, using a single laser pulse for wakefield generation. In this dissertation, we study the controlled injection via the beating of two lasers (the pump laser pulse creating the plasma wave and a second beam being propagated in opposite direction) which induce a localized injection of background plasma electrons. The aim of this dissertation is to describe in detail the physics of optical injection using two lasers, the characteristics of the electron beams produced (the micrometer scale plasma wavelength can result in femtosecond and even attosecond bunches) as well as a concise estimate of the effects of space charge on the dynamics of an ultra-dense electron bunch with a large energy spread

  10. Photoconductivity and Charge-Carrier Photogeneration in Photorefractive Polymers

    NARCIS (Netherlands)

    Däubler, Thomas K.; Kulikovsky, Lazar; Neher, Dieter; Cimrová, Vera; Hummelen, J.C.; Mecher, Erwin; Bittner, Reinhard; Meerholz, Klaus; Lawson, M.; Meerholz, Klaus

    2002-01-01

    We have studied photogeneration, transport, trapping and recombination as the governing mechanisms for the saturation field strength and the time response of the photorefractive (PR) effect in PVK-based PR materials, utilizing xerographic discharge and photoconductivity experiments. Both the charge

  11. Stabilization of Charge Carriers in Picket-Fence Polythiophenes Using Dielectric Side Chains.

    Science.gov (United States)

    Zhao, Chunhui; Sakurai, Tsuneaki; Yoneda, Satoru; Seki, Shu; Sugimoto, Manabu; Oki, Choji; Takeuchi, Masayuki; Sugiyasu, Kazunori

    2016-08-19

    Insulated molecular wires (IMWs) are π-conjugated polymers that are molecularly sheathed with an insulating layer and are structurally analogous to electric power cords at the nanoscale. Such unique architectures are expected in molecular electronics and organic devices. Herein, we propose a new molecular design concept of IMWs, in which the sheaths can be customized, thereby enabling the modulation of the electronic properties of the interior π-conjugated systems. To this end, we focused our attention on the dielectric constant of the sheaths, as it governs the electrostatic interaction between charges. Upon doping, charge carriers, such as polaron and bipolaron, were generated regardless of the dielectric properties of the sheaths. Flash-photolysis time-resolved microwave conductivity measurements revealed that intrawire charge carrier mobility was independent of the sheaths. However, we found that the charge carriers could be stabilized by the sheaths with a high dielectric constant owing to the charge screening effect. We expect that IMWs designed in this way will be useful in a variety of applications, where the nature of charge carriers plays an important role, and particularly when redox switching is required (e.g., electrochromic, magnetic, and memory applications). PMID:27503254

  12. Enhancement of the critical current of intrinsic Josephson junctions by carrier injection

    Science.gov (United States)

    Kizilaslan, O.; Simsek, Y.; Aksan, M. A.; Koval, Y.; Müller, P.

    2015-08-01

    We present a study of the doping effect by carrier injection of high-Tc superconducting Bi-based whiskers. The current was injected in the c-axis direction, i.e., perpendicular to the superconducting planes. Superconducting properties were investigated systematically as a function of the doping level. The doping level of one and the same sample was changed by current injection in very small steps from an underdoped state up to a slightly overdoped state. We have observed that Tc versus log (jc) exhibits a dome-shaped characteristic, which can be fitted by a parabola. As Tc versus carrier concentration has a parabolic form, too, it can be concluded that the critical current density jc increases exponentially with the doping level. The electron-trapping mechanism is interpreted in the framework of Phillips’ microscopic theory. In addition, the Joule heating effect in the intrinsic Josephson junction (IJJ) was controlled by carrier injection, and the effect of the non-equilibrium quasiparticle on the I-V curves of the IJJs was also discussed.

  13. Probing charge transfer and hot carrier dynamics in organic solar cells with terahertz spectroscopy

    Science.gov (United States)

    Cunningham, Paul D.; Lane, Paul A.; Melinger, Joseph S.; Esenturk, Okan; Heilweil, Edwin J.

    2016-04-01

    Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C60) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C60 were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C60, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C60 followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C60, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

  14. Minimizing charge carrier losses in photoelectrochemical water splitting

    OpenAIRE

    Rongé, Jan; De Volder, Michaël; Deng, Shaoren; Dendooven, Jolien; Detavernier, Christophe; Martens, Johan

    2013-01-01

    Solar hydrogen from photoelectrochemical water splitting is a possible solution for future energy supply. Despite promising efforts, efficiencies of such systems are still at around 5 % [1]. Difficulties associated with photoelectrochemical cells can be attributed to the integration of photophysical and electrochemical processes in a single device. While light absorption and charge separation must be maximized in the former, the latter requires large surface area and imposes kinetic barriers ...

  15. Charge and excitation dynamics in semiconducting polymer layers doped with emitters and charge carrier traps; Ladungstraeger- und Anregungsdynamik in halbleitenden Polymerschichten mit eingemischten Emittern und Ladungstraegerfallen

    Energy Technology Data Exchange (ETDEWEB)

    Jaiser, F.

    2006-06-15

    Light-emitting diodes generate light from the recombination of injected charge carriers. This can be obtained in inorganic materials. Here, it is necessary to produce highly ordered crystalline structures that determine the properties of the device. Another possibility is the utilization of organic molecules and polymers. Based on the versatile organic chemistry, it is possible to tune the properties of the semiconducting polymers already during synthesis. In addition, semiconducting polymers are mechanically flexible. Thus, it is possible to construct flexible, large-area light sources and displays. The first light-emitting diode using a polymer emitter was presented in 1990. Since then, this field of research has grown rapidly up to the point where first products are commercially available. It has become clear that the properties of polymer light-emitting diodes such as color and efficiency can be improved by incorporating multiple components inside the active layer. At the same time, this gives rise to new interactions between these components. While components are often added either to improve the charge transport or to change the emission, it has to made sure that other processes are not influenced in a negative manner. This work investigates some of these interactions and describes them with simple physical models. First, blue light-emitting diodes based on polyfluorene are analyzed. This polymer is an efficient emitter, but it is susceptible to the formation of chemical defects that can not be suppressed completely. These defects form electron traps, but their effect can be compensated by the addition of hole traps. The underlying process, namely the changed charge carrier balance, is explained. In the following, blend systems with dendronized emitters that form electron traps are investigated. The different influence of the insulating shell on the charge and energy transfer between polymer host and the emissive core of the dendrimers is examined. In the

  16. Spin-dependent charge carrier recombination in PCBM

    Science.gov (United States)

    Morishita, Hiroki; Baker, William; Waters, David; Baarda, Rachel; Lupton, John; Boehme, Christoph; Utah Spin Electronics Group Collaboration; Lupton Group Collaboration

    2013-03-01

    We present room temperature pulsed electrically detected magnetic resonance (pEDMR) measurements on [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) (electron acceptor) thin film unipolar and bipolar devices. Our study aimed at identifying the dominating spin-dependent transport and recombination processes therein. Experimentally, the devices were operated under a constant positive bias, and the resultant transient current response was then monitored after the application of a short resonant microwave pulse excitation. The measurements did not reveal any observable signal for unipolar electron devices which suggests that spin-dependent transport mechanisms are not dominant in PCBM. However, under bipolar injection, at least two pronounced spin-dependent signals were detected whose magnitudes increased as the devices degraded upon exposure to air. Electrical detection of spin-Rabi beat oscillation revealed that one of these two signals is due to weakly coupled pairs of spins with s =1/2. We therefore attribute this signal to electron-hole recombination. This observation shows that while PCBM is a poor hole conductor, hole injection can be significant.

  17. Energy resolution and related charge carrier mobility in LaBr3:Ce scintillators

    NARCIS (Netherlands)

    Khodyuk, I.V.; Quarati, F.G.A.; Alekhin, M.S.; Dorenbos, P.

    2013-01-01

    The scintillation response of LaBr3:Ce scintillation crystals was studied as function of temperature and Ce concentration with synchrotron X-rays between 9 keV and 100 keV. The results were analyzed using the theory of carrier transport in wide band gap semiconductors to gain new insights into charg

  18. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  19. Thermosensitive chitosan-Pluronic hydrogel as an injectable cell delivery carrier for cartilage regeneration.

    Science.gov (United States)

    Park, Kyung Min; Lee, Sang Young; Joung, Yoon Ki; Na, Jae Sik; Lee, Myung Chul; Park, Ki Dong

    2009-07-01

    Injectable hydrogels have been studied for potential applications for articular cartilage regeneration. In this study, a thermosensitive chitosan-Pluronic (CP) hydrogel was designed as an injectable cell delivery carrier for cartilage regeneration. The CP conjugate was synthesized by grafting Pluronic onto chitosan using EDC/NHS chemistry. The sol-gel phase transition and mechanical properties of the CP hydrogel were examined by rheological experiments. The CP solution underwent a sol-gel transition around 25 degrees C at which the storage modulus (G') approaches 10(4)Pa, highlighting the potential of this material as an injectable scaffold for cartilage regeneration. The CP hydrogel was formed rapidly by increasing the temperature. The morphology of the dried CP hydrogel was observed by scanning electron microscopy. In vitro cell culture was performed using bovine chondrocytes. The proliferation of bovine chondrocytes and the amount of synthesized glycosaminoglycan increased for 28 days. These results suggested that the CP hydrogel has potential as an injectable cell delivery carrier for cartilage regeneration and could serve as a new biomaterial for tissue engineering. PMID:19261553

  20. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

    Science.gov (United States)

    Kim, Bongjun; Liang, Kelly; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2016-07-01

    We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

  1. Ab initio charge-carrier mobility model for amorphous molecular semiconductors

    Science.gov (United States)

    Massé, Andrea; Friederich, Pascal; Symalla, Franz; Liu, Feilong; Nitsche, Robert; Coehoorn, Reinder; Wenzel, Wolfgang; Bobbert, Peter A.

    2016-05-01

    Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential to describe the electrical properties of devices based on these materials. The disordered nature of these semiconductors leads to percolative charge transport with a large characteristic length scale, posing a challenge to the development of such models from ab initio simulations. Here, we develop an ab initio mobility model using a four-step procedure. First, the amorphous morphology together with its energy disorder and intermolecular charge-transfer integrals are obtained from ab initio simulations in a small box. Next, the ab initio information is used to set up a stochastic model for the morphology and transfer integrals. This stochastic model is then employed to generate a large simulation box with modeled morphology and transfer integrals, which can fully capture the percolative charge transport. Finally, the charge-carrier mobility in this simulation box is calculated by solving a master equation, yielding a mobility function depending on temperature, carrier concentration, and electric field. We demonstrate the procedure for hole transport in two important molecular semiconductors, α -NPD and TCTA. In contrast to a previous study, we conclude that spatial correlations in the energy disorder are unimportant for α -NPD. We apply our mobility model to two types of hole-only α -NPD devices and find that the experimental temperature-dependent current density-voltage characteristics of all devices can be well described by only slightly decreasing the simulated energy disorder strength.

  2. Analytical and numerical studies of photo-injected charge transport in molecularly-doped polymers

    Science.gov (United States)

    Roy Chowdhury, Amrita

    The mobility of photo-injected charge carriers in molecularly-doped polymers (MDPs) exhibits a commonly observed, and nearly universal Poole-Frenkel field dependence, mu exp√(beta0E), that has been shown to arise from the correlated Gaussian energy distribution of transport sites encountered by charges undergoing hopping transport through the material. Analytical and numerical studies of photo-injected charge transport in these materials are presented here with an attempt to understand how specific features of the various models developed to describe these systems depend on the microscopic parameters that define them. Specifically, previously published time-of-flight mobility data for the molecularly doped polymer 30% DEH:PC (polycarbonate doped with 30 wt.% aromatic hydrazone DEH) is compared with direct analytical and numerical predictions of five disorder-based models, the Gaussian disorder model (GDM) of Bassler, and four correlated disorder models introduced by Novikov, et al., and by Parris, et al. In these numerical studies, disorder parameters describing each model were varied from reasonable starting conditions, in order to give the best overall fit. The uncorrelated GDM describes the Poole-Frenkel field dependence of the mobility only at very high fields, but fails for fields lower than about 64 V/mum. The correlated disorder models with small amounts of geometrical disorder do a good over-all job of reproducing a robust Poole-Frenkel field dependence, with correlated disorder theories that employ polaron transition rates showing qualitatively better agreement with experiment than those that employ Miller-Abrahams rates. In a separate study, the heuristic treatment of spatial or geometric disorder incorporated in existing theories is critiqued, and a randomly-diluted lattice gas model is developed to describe the spatial disorder of the transport sites in a more realistic way.

  3. Fibrin Gel as an Injectable Biodegradable Scaffold and Cell Carrier for Tissue Engineering

    Directory of Open Access Journals (Sweden)

    Yuting Li

    2015-01-01

    Full Text Available Due to the increasing needs for organ transplantation and a universal shortage of donated tissues, tissue engineering emerges as a useful approach to engineer functional tissues. Although different synthetic materials have been used to fabricate tissue engineering scaffolds, they have many limitations such as the biocompatibility concerns, the inability to support cell attachment, and undesirable degradation rate. Fibrin gel, a biopolymeric material, provides numerous advantages over synthetic materials in functioning as a tissue engineering scaffold and a cell carrier. Fibrin gel exhibits excellent biocompatibility, promotes cell attachment, and can degrade in a controllable manner. Additionally, fibrin gel mimics the natural blood-clotting process and self-assembles into a polymer network. The ability for fibrin to cure in situ has been exploited to develop injectable scaffolds for the repair of damaged cardiac and cartilage tissues. Additionally, fibrin gel has been utilized as a cell carrier to protect cells from the forces during the application and cell delivery processes while enhancing the cell viability and tissue regeneration. Here, we review the recent advancement in developing fibrin-based biomaterials for the development of injectable tissue engineering scaffold and cell carriers.

  4. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  5. Time-delayed behaviors of transient four-wave mixing signal intensity in inverted semiconductor with carrier-injection pumping

    Science.gov (United States)

    Hu, Zhenhua; Gao, Shen; Xiang, Bowen

    2016-01-01

    An analytical expression of transient four-wave mixing (TFWM) in inverted semiconductor with carrier-injection pumping was derived from both the density matrix equation and the complex stochastic stationary statistical method of incoherent light. Numerical analysis showed that the TFWM decayed decay is towards the limit of extreme homogeneous and inhomogeneous broadenings in atoms and the decaying time is inversely proportional to half the power of the net carrier densities for a low carrier-density injection and other high carrier-density injection, while it obeys an usual exponential decay with other decaying time that is inversely proportional to half the power of the net carrier density or it obeys an unusual exponential decay with the decaying time that is inversely proportional to a third power of the net carrier density for a moderate carrier-density injection. The results can be applied to studying ultrafast carrier dephasing in the inverted semiconductors such as semiconductor laser amplifier and semiconductor optical amplifier.

  6. Approaching charge balance in organic light-emitting diodes by tuning charge injection barriers with mixed monolayers.

    Science.gov (United States)

    Yu, Szu-Yen; Huang, Ding-Chi; Chen, Yi-Ling; Wu, Kun-Yang; Tao, Yu-Tai

    2012-01-10

    Self-assembled monolayers (SAMs) of binary mixtures of 1-butylphosphonic acid and the trifluoromethyl-terminated analogue (4,4,4-trifluoro-1-butylphosphonic acid) were formed on ITO surfaces to tune the work function of ITO over a range of 5.0 to 5.75 eV by varying the mixing ratio of the two adsorbents. The mixed SAM-modified ITO surfaces were used as the anode in the fabrication of OLED devices with a configuration of ITO/SAM/HTL/Alq3/MX/Al, where HTL was the NPB or BPAPF hole-transporting layer and MX was the LiF or Cs(2)CO(3) injection layer. It was shown that, depending on the HTL or MX used, the maximum device current and the maximum luminance efficiency occurred with anodes of different modifications because of a shift in the point of hole/electron carrier balance. This provides information on the charge balance in the device and points to the direction to improve the performance. PMID:22103763

  7. Non-uniform space charge limited current injection into a nano contact solid.

    Science.gov (United States)

    Zhu, Y B; Ang, L K

    2015-01-01

    We have developed a two-dimensional (2D) non-uniform model to study the space charge limited (SCL) current injection into a trap-filled solid of nano-contact, such as organic materials and dielectrics. Assuming a solid of length D with a contact of width W, the enhancement over the well-known 1D uniform model is calculated as a function of W/D for different material properties, such as the dielectric constant (ε) and the trap distribution. The non-uniform current density profile due to edge effect is predicted. The findings reported here are different from the prior uniform 2D models, which are significant for small W/D when the size of the contact reaching nanometer scale, i.e. W = 50 nm for D = 1 μm. This model will be useful for the characterization of carrier mobility and properties of traps, which are critical to many novel devices (with small nano-contact) operating in the space charge limited condition reporting in novel device and its applications. Empirical formulas are given for future comparison with experimental results. PMID:25779769

  8. 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator

    Institute of Scientific and Technical Information of China (English)

    Chen Hongtao; Ding Jianfeng; Yang Lin

    2012-01-01

    We demonstrate a 12.5 Gb/s carrier-injection silicon Mach-Zehnder optical modulator.Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V,the eye is clearly opened with an extinction ratio of 8.4 dB.The device exhibits high modulation efficiency,with a figure of merit VπL of 0.036 V.mm.

  9. Optical imaging of resonant electrical carrier injection into individual quantum dots

    OpenAIRE

    A. Baumgartner; Stock, E; Patanè, A.; Eaves, L.; Henini, M.; Bimberg, D.

    2010-01-01

    We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting ...

  10. Theoretical modeling of the terahertz response of ultrafast photoexcited charge carriers in graphene

    Science.gov (United States)

    Rustagi, Avinash; Stanton, Christopher J.

    2014-03-01

    We have formulated a semi-classical model to capture the terahertz response of photoexcited charge carriers in graphene. The model involves the time evolution of the initial carrier distribution function excited by a femtosecond laser pulse by solving the Boltzmann equation within the relaxation time approximation in presence of an in-plane DC electric field. We solve for the time dependent average velocity using the distribution function obtained from the Boltzmann equation. The time derivative of this average velocity is proportional to the terahertz signal measured in experiments. We also consider the contribution of virtual carriers to the terahertz signal. This model can also be applied to systems with a gapped graphene-like dispersion. Supported by NSF through grant OISE-0968405.

  11. The thermoballistic transport model a novel approach to charge carrier transport in semiconductors

    CERN Document Server

    Lipperheide, Reinhard

    2014-01-01

    The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detai...

  12. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    Science.gov (United States)

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-06-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery.

  13. Towards high charge carrier mobilities by rational design of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  14. Plasmon-enhanced charge carrier generation in organic photovoltaic films using silver nanoprisms.

    Science.gov (United States)

    Kulkarni, Abhishek P; Noone, Kevin M; Munechika, Keiko; Guyer, Samuel R; Ginger, David S

    2010-04-14

    We use photoinduced absorption spectroscopy to measure long-lived photogenerated charge carriers in optically thin donor/acceptor conjugated polymer blend films near plasmon-resonant silver nanoprisms. We measure up to 3 times more charge generation, as judged by the magnitude of the polaron absorption signal, in 35 nm thin blend films of poly(3-hexylthiophene)/phenyl-C(61)-butyric acid methyl ester on top of films of silver nanoprisms (approximately 40-100 nm edge length). We find that the polaron yields increase linearly with the total sample extinction. These excitation enhancements could in principle be used to increase photocurrents in thin organic solar cells.

  15. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhenrui [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)]. E-mail: yinaoep@yahoo.mx; Aceves, Mariano [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico); Carrillo, Jesus [CIDS, BUAP, Puebla, Pue. (Mexico); Lopez-Estopier, Rosa [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)

    2006-12-05

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V {sub T}. When the applied voltage is smaller than V {sub T}, the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V {sub T}, the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained.

  16. Charge Carrier Transport and Photogeneration in P3HT:PCBM Photovoltaic Blends

    KAUST Repository

    Laquai, Frederic

    2015-05-03

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano­fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10−4 cm2 V−1 s−1 after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea­sured in P3HT:PCBM photovoltaic devices.

  17. Sliding Fibers: Slidable, Injectable, and Gel-like Electrospun Nanofibers as Versatile Cell Carriers.

    Science.gov (United States)

    Lee, Slgirim; Yun, Seokhwan; Park, Kook In; Jang, Jae-Hyung

    2016-03-22

    Designing biomaterial systems that can mimic fibrous, natural extracellular matrix is crucial for enhancing the efficacy of various therapeutic tools. Herein, a smart technology of three-dimensional electrospun fibers that can be injected in a minimally invasive manner was developed. Open surgery is currently the only route of administration of conventional electrospun fibers into the body. Coordinating electrospun fibers with a lubricating hydrogel produced fibrous constructs referred to as slidable, injectable, and gel-like (SLIDING) fibers. These SLIDING fibers could pass smoothly through a catheter and fill any cavity while maintaining their fibrous morphology. Their injectable features were derived from their distinctive rheological characteristics, which were presumably caused by the combinatorial effects of mobile electrospun fibers and lubricating hydrogels. The resulting injectable fibers fostered a highly favorable environment for human neural stem cell (hNSC) proliferation and neurosphere formation within the fibrous structures without compromising hNSC viability. SLIDING fibers demonstrated superior performance as cell carriers in animal stroke models subjected to the middle cerebral artery occlusion (MCAO) stroke model. In this model, SLIDING fiber application extended the survival rate of administered hNSCs by blocking microglial infiltration at the early, acute inflammatory stage. The development of SLIDING fibers will increase the clinical significance of fiber-based scaffolds in many biomedical fields and will broaden their applicability. PMID:26885937

  18. Theoretical investigation of fluorination effect on the charge carrier transport properties of fused anthra-tetrathiophene and its derivatives.

    Science.gov (United States)

    Yin, Jun; Chaitanya, Kadali; Ju, Xue-Hai

    2016-03-01

    The crystal structures of known anthra-tetrathiophene (ATT) and its three fluorinated derivatives (ATT1, ATT2 and ATT3) were predicted by the Monte Carlo-simulated annealing method with the embedded electrostatic potential (ESP) charges. The most stable crystal structures were further optimized by the density functional theory with the dispersion energy (DFT-D) method. In addition, the effect of the electron-withdrawing fluorine atoms on the molecular geometry, molecular stacking, electronic and transport properties of title compounds were investigated by the density functional theory and the incoherent charge-hopping model. The calculated results show that the introduction of fluorine atoms does not affect the molecular planarity but decreases the HOMO-LUMO gap, which is beneficial to electron injection and provides more charge carrier stabilization. The improved electron mobility from ATT to ATT3 is attributed to the favorable molecular packing with strong π-π interaction and the short stacking distance. ATT2 and ATT3 exhibit remarkable angular dependence of mobilities and anisotropic behaviors. The band structures reveal that all the paths with larger transfer integrals are along the directions of large dispersions in the valence band (VB) and conduction band (CB). ATT3 has the largest electron mobility (0.48 cm(2)V(-1)s(-1)) among the four compounds, indicating that fluorination is an effective approach to improve electron transport. PMID:26774641

  19. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    OpenAIRE

    Astakhov, O.; Carius, R.; F. Finger; Petrusenko, Y.; Borysenko, V.; Barankov, D.

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparin...

  20. Determination of charge carrier profiles - Problems and limitations of methods at short ranges

    International Nuclear Information System (INIS)

    The determination of charge carrier profiles near the surface produced by low-energy ion implantation is partly possible by the aid of a modified capacitance-voltage method thermally stimulated current (TSC) spectroscopy, and Hall measurements as exemplified by silicon samples. The capacitance spectroscopy by means of Schottky junctions and the effect of deep defects on the first, the spectroscopy of deep levels by the TSC method and differential Hall measurements are presented

  1. Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films

    Institute of Scientific and Technical Information of China (English)

    ZHOU Yan-Wen; WU Fa-Yu; ZHENG Chun-Yan

    2011-01-01

    We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory.%We examine the structures,cut-off points of transmittance spectra and electric properties of undoped ZnO,SnO2 and CdO films by scanning electron microscopy,x-ray diffraction,spectrophotometer and Hall-effect measurements,respectively.The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum.The structures and properties of the as-deposited films are compared with those of the annealed one.We try to explain the behaviour of charge carriers based on the semiconductor physics Many studies about transparent conductive oxide (TCO) films have focused on the effects of deposition techniques,post-annealing parameters and dopants on the optical and electrical properties of the films.[1-11] It is believed that the microstructure and the charge carrier are the two key factors for the control of the electrical properties of TCO films.The integration of the crystals,which normally can be improved by post annealing treatment,may affect the mobility of charge carriers and hence the electrical properties of TCO films.

  2. The effect of oxidation on charge carrier motion in PbS quantum dot thin films studied with Kelvin Probe Microscopy

    Science.gov (United States)

    Nguyen Hoang, Lan Phuong; Williams, Pheona; Moscatello, Jason; Aidala, Kathy; Aidala group Team

    We developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in thin film devices. We investigate the effects of oxidation on thin films of Lead Sulfide (PbS) quantum dots with tetrabutyl-ammonium-iodide (TBAI) ligands in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin Probe Force Microscopy (KPFM) to measure the potential over time, we can record how the charge carriers respond to changing the backgate voltage with grounded source and drain electrodes. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the PbS film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We probe these trapped holes by applying different gate voltages and recording the change in potential at the surface. There are mixed reports about the effect of air exposure on thin films of PbS quantum dots, with initial exposure appearing to be beneficial to device characteristics. We study the change in current, mobility, and charge injection and extraction as measured by KPFM over hours and days of exposure to air. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  3. The first test experiment of H- charge-exchange injection in the KEK booster

    International Nuclear Information System (INIS)

    The H- charge-exchange injection method was applied to the 500 MeV booster of the 12 GeV proton synchrotron at KEK, as an alternative to the multi-turn injection method using direct injection of protons. The first test experiment of such injection was carried out during three weeks beginning in late September 1983. Experimental results showed that, in spite of the low injection energy used for our booster, such an injection method is promising for increasing the beam intensity of the booster. And also, some further improvements are proposed. (author)

  4. Charge carrier trapping into mobile, ionic defects in nanoporous ultra-low-k dielectric materials

    Science.gov (United States)

    Plawsky, Joel; Borja, Juan; Lu, Toh-Ming; Gill, William

    2014-03-01

    Reliability and robustness of low-k materials for advanced interconnects has become a major challenge for the continuous down-scaling of silicon semiconductor devices. Metal catalyzed time dependent breakdown (TDDB) is a major force preventing the integration of sub-32nm process technology nodes. We investigate how ionic species can become trapping centers (mobile defects) for charge carriers. A mechanism for describing and quantifying the trapping of charge carriers into mobile ions under bias and temperature stress is presented and experimentally investigated. The dynamics of trapping into ionic centers are severely impacted by temperature and species mass transport. After extended bias and temperature stress, the magnitude of charge trapping into ionic centers decreases asymptotically. Various processes such as the reduction of ionic species, moisture outgassing, and the inhibition of ionic drift via the distortion of local fields were investigated as possible cause for the reduction in charge trapping. Simulations suggest that built-in fields reduce the effect of an externally applied field in directing ionic drift, which can lead to the inhibition of the trapping mechanism. In addition, conduction mechanisms are investigated for reactive and inert electrodes. Seimconductor Research Corporation.

  5. Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

    2014-04-15

    Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced

  6. Subsurface Imaging and Sensing of Charge Carrier Movements in the Earth’s Crust

    Science.gov (United States)

    Dahlgren, R.; Freund, F. T.; Lazarus, M.; Wang, J. S.; Rekenthaler, D.; Peters, R. D.; Duma, G.

    2009-12-01

    The DUSEL facility will enable unique opportunities for field experiments that would otherwise not be possible at surface facilities (Lesko, K.T., TAUP, 2007) and support a host of undergraduate and graduate educational projects. In this presentation, some of the proposed geophysics experiments will be described as part of the subsurface Imaging and Sensing (SIS) project to study charge carrier movement in crustal rock as a function of various perturbations. The electric conductivity of the Earth’s crust is dominated by positive hole charge carriers, e.g. mobile electron vacancy defects (EVD) in the oxygen anion sublattice of minerals that make up the bulk of crustal rocks. We are interested in (i) coupling of fundamental processes linked to the activation of additional EVDs in rocks deep in the crust subjected to tectonic stresses and the outflow of these charge carriers into the surrounding rocks, (ii) their manifestation across the electromagnetic spectrum and other measuands, (iii) induced forces that arise when these charge carriers are subjected to the episodic or daily magnetic field variations coming from geomagnetic storms or from the ionospheric current vortex, and (iv) in the movement of positive holes in the shallow crust when a thunderstorm system drifts overhead, dragging along a charge cloud in the ground. We propose to conduct active rock stressing experiments in situ using expanding grout technique (performing electrical, electromagnetic, and VolksMeter tilt measurements) and to monitor the electric and magnetic field variations penetrating into the Earth’s crust. Additionally optical phenomena will be investigated (anomalous infrared signatures, visible light arising from atomic oxygen and corona discharge, and infrared imaging). If budget permits, measurement of changes of acoustic velocity, evolution of chemical species (H2, O*, Rn, etc) and radar reflectivity as a function of stresses will also be attempted. We propose to study the charge

  7. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    Science.gov (United States)

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells. PMID:27176547

  8. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    Science.gov (United States)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  9. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    Science.gov (United States)

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

  10. Temperature dependence of the charge carrier mobility in gated quasi-one-dimensional systems

    OpenAIRE

    Gallos, L. K.; Movaghar, B.; Siebbeles, L.D.A.

    2003-01-01

    The many-body Monte Carlo method is used to evaluate the frequency dependent conductivity and the average mobility of a system of hopping charges, electronic or ionic on a one-dimensional chain or channel of finite length. Two cases are considered: the chain is connected to electrodes and in the other case the chain is confined giving zero dc conduction. The concentration of charge is varied using a gate electrode. At low temperatures and with the presence of an injection barrier, the mobilit...

  11. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    Science.gov (United States)

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production

  12. Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

    Directory of Open Access Journals (Sweden)

    E. Gaubas

    2011-06-01

    Full Text Available Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure.

  13. Charge injection from a surface depletion region—The Al 2O 3-silicon system

    Science.gov (United States)

    Kolk, J.; Heasell, E. L.

    1980-03-01

    Electron injection from a surface depletion region, over the surface barrier at an Al 2O 3-silicon interface is studied. The current passing over the barrier is measured by observing the rate of flat-band voltage shift as charge is trapped in the oxide. The data obtained is compared with the predictions of present models for charge injection. It is found that the so-called 'lucky-electron' model gives the most generally satisfactory agreement with the observations.

  14. Charge-Carrier Dynamics in Organic-Inorganic Metal Halide Perovskites

    Science.gov (United States)

    Herz, Laura M.

    2016-05-01

    Hybrid organic-inorganic metal halide perovskites have recently emerged as exciting new light-harvesting and charge-transporting materials for efficient photovoltaic devices. Yet knowledge of the nature of the photogenerated excitations and their subsequent dynamics is only just emerging. This article reviews the current state of the field, focusing first on a description of the crystal and electronic band structure that give rise to the strong optical transitions that enable light harvesting. An overview is presented of the numerous experimental approaches toward determining values for exciton binding energies, which appear to be small (a few milli-electron volts to a few tens of milli-electron volts) and depend significantly on temperature because of associated changes in the dielectric function. Experimental evidence for charge-carrier relaxation dynamics within the first few picoseconds after excitation is discussed in terms of thermalization, cooling, and many-body effects. Charge-carrier recombination mechanisms are reviewed, encompassing trap-assisted nonradiative recombination that is highly specific to processing conditions, radiative bimolecular (electron-hole) recombination, and nonradiative many-body (Auger) mechanisms.

  15. Charge-Carrier Dynamics in Organic-Inorganic Metal Halide Perovskites.

    Science.gov (United States)

    Herz, Laura M

    2016-05-27

    Hybrid organic-inorganic metal halide perovskites have recently emerged as exciting new light-harvesting and charge-transporting materials for efficient photovoltaic devices. Yet knowledge of the nature of the photogenerated excitations and their subsequent dynamics is only just emerging. This article reviews the current state of the field, focusing first on a description of the crystal and electronic band structure that give rise to the strong optical transitions that enable light harvesting. An overview is presented of the numerous experimental approaches toward determining values for exciton binding energies, which appear to be small (a few milli-electron volts to a few tens of milli-electron volts) and depend significantly on temperature because of associated changes in the dielectric function. Experimental evidence for charge-carrier relaxation dynamics within the first few picoseconds after excitation is discussed in terms of thermalization, cooling, and many-body effects. Charge-carrier recombination mechanisms are reviewed, encompassing trap-assisted nonradiative recombination that is highly specific to processing conditions, radiative bimolecular (electron-hole) recombination, and nonradiative many-body (Auger) mechanisms. PMID:26980309

  16. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  17. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-07-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid.

  18. Super-knock Suppression Using Split Injection in a Turbo-Charged GDI Engine

    Directory of Open Access Journals (Sweden)

    Lv Meng

    2016-01-01

    Full Text Available Super-knock, which occurs under low-speed and big load operate condition in turbo-charged gasoline direct injection (TGDI engine, is an abnormal combustion phenomenon. Due to its potential to cause degradation of the engine, super knock has become the main obstacle for increasing specific power and lowing fuel consumption of engine. In order to investigate suppress strategies of super-knock, split injection is applied on a high boosted GDI engine. The results shows that: super knock correlates to some extent with split injection; further study shows that appropriate split injection duty ratio and the end of second injection time could reduce super knock effectively.

  19. SEMICONDUCTOR DEVICES: Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

    Science.gov (United States)

    Jiate, Zhao; Yong, Zhao; Wanjun, Wang; Yinlei, Hao; Qiang, Zhou; Jianyi, Yang; Minghua, Wang; Xiaoqing, Jiang

    2010-06-01

    The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation. Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices, especially for small structure ones. For a device with a 1000 μm modulation length, the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions. A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

  20. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    Science.gov (United States)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh

  1. Effective of the q-deformed pseudoscalar magnetic field on the charge carriers in graphene

    Science.gov (United States)

    Eshghi, M.; Mehraban, H.

    2016-08-01

    In this paper, we have obtained exact analytical solutions of the time-independent Dirac-Weyl equation for the charge carriers with q-deformed pseudoscalar magnetic barrier (PMB) in graphene by using the ansatz method. We have also found a solution that describes the left propagating wave function to calculation of the reflection and transmission coefficients using the Riemann's equation. This allows us to conclude about the Dirac-Weyl equation with PMB and to understand quantum behavior of the Dirac fermions. Finally, some of the numerical results are shown, too.

  2. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    Science.gov (United States)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent

  3. Charge injection and transport in low-mobility mixed ionic/electronic conducting systems: Regimes of behavior and limiting cases

    Science.gov (United States)

    Mills, Thomas J.; Lonergan, Mark C.

    2012-01-01

    A comprehensive analysis of a model describing charge-carrier injection and transport in light-emitting electrochemical cells (LECs) and related mixed ionic electronic conductors (MIECs) is given. Ions are treated using a modified drift-diffusion transport equation that accounts for volume-exclusion effects, and electronic injection is treated using a spatially dependent tunneling mechanism that explicitly accounts for both forward and backward fluxes. Systems containing both one and two mobile ionic species are treated and compared. The unique physics of LECs stem from ionic polarization processes that can lead to field screening and narrowed injection barriers, producing increased electrode exchange currents via tunneling. The latter process promotes the establishment of electronic quasiequilibrium throughout the double-layer regions and hence promotes bulk-limited conduction. Explicit expressions are given describing the conditions necessary to assume field screening and bulk-limited conduction, which determine the applicability of either traditional semiconductor device models such as Fowler-Nordheim or electrochemical models such as the Nernst equation. Having established these conditions, several distinct regimes of bulk-limited LEC behavior are described. Explicit formulas for the biases delineating these regimes are given as well as formulas for the current in each regime. At low biases, the current generally increases exponentially with bias; the bulk remains field free, and the transport is predominantly unipolar and diffusive. At high biases, the current rises much less rapidly, and bulk transport is bipolar, occurring through a combination of drift and diffusion. The nature of the bulk region in the high-bias regime is markedly different in systems with one and two mobile ionic species. At intermediate biases, space charge effects preferentially drive injection of the minority carrier causing a transition from unipolar to bipolar injection. It is

  4. Behavior of charge carriers and excitons in multilayer organic light-emitting diodes made from a polysilane polymer as monitored with electroluminescence

    Science.gov (United States)

    Suzuki, Hiroyuki; Hoshino, Satoshi

    1996-01-01

    Using electroluminescence (EL) as a monitor, we have investigated the behavior of charge carriers injected from electrodes and excitons generated by the recombination of charge carriers in multilayer organic light-emitting diodes (LEDs) using poly(methylphenylsilane) (PMPS) as a hole transporting material. Our multilayer LEDs have two or three functional organic layers including Coumarin 6 [3-(2'-benzothiazolyl)-7-diethylaminocoumarin, abbreviated as C6] and/or tris-(8-hydroxyquinoline) aluminum layers as well as a PMPS layer. When the LEDs were fabricated, two parameters of the C6 layer were changed, the layer thickness (30-120 nm) and the dye concentration (1-100 wt %). We employed a combined analysis of the dependence of the EL spectra on the thickness and dye concentration of the C6 layer, the dye-selective fluorescence spectra and the current-voltage-EL characteristics, to reveal the thickness of the electron-hole capture zone and the behavior of charge carriers and excitons during operation in these LEDs.

  5. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-05-22

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  6. The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

    NARCIS (Netherlands)

    Hurley, Paul K.; Negara, Adi; Hemert, van Tom; Cherkaoui, Karim

    2009-01-01

    In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8x1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the den

  7. Raising the barrier for photoinduced DNA charge injection with a cyclohexyl artificial base pair.

    Science.gov (United States)

    Singh, Arunoday P N; Harris, Michelle A; Young, Ryan M; Miller, Stephen A; Wasielewski, Michael R; Lewis, Frederick D

    2015-01-01

    The effects of an artificial cyclohexyl base pair on the quantum yields of fluorescence and dynamics of charge separation and charge recombination have been investigated for several synthetic DNA hairpins. The hairpins possess stilbenedicarboxamide, perylenediimide, or naphthalenediimide linkers and base-paired stems. In the absence of the artificial base pair hole injection into both adenine and guanine purine bases is exergonic and irreversible, except in the case of stilbene with adenine for which it is slightly endergonic and reversible. Insertion of the artificial base pair renders hole injection endergonic or isoergonic except in the case of the powerful naphthalene acceptor for which it remains exergonic. Both hole injection and charge recombination are slower for the naphthalene acceptor in the presence of the artificial base pair than in its absence. The effect of an artificial base pair on charge separation and charge recombination in hairpins possessing stilbene and naphthalene acceptor linkers and a stilbenediether donor capping group has also been investigated. In the case of the stilbene acceptor-stilbene donor capped hairpins photoinduced charge separation across six base pairs is efficient in the absence of the artificial base pair but does not occur in its presence. In the case of the naphthalene acceptor-stilbene donor capped hairpins the artificial base pair slows but does not stop charge separation and charge recombination, leading to the formation of long-lived charge separated states. PMID:26442603

  8. Direct Observation of the Hole Carriers in DNA Photoinduced Charge Transport.

    Science.gov (United States)

    Harris, Michelle A; Mishra, Ashutosh Kumar; Young, Ryan M; Brown, Kristen E; Wasielewski, Michael R; Lewis, Frederick D

    2016-05-01

    The excited state behavior of DNA hairpins possessing a diphenylacetylenedicarboxamide (DPA) linker separated from a single guanine-cytosine (G-C) base pair by zero-to-six adenine-thymine (A-T) base pairs has been investigated. In the case of hairpins with zero or one A-T separating DPA and G, formation of both DPA anion radical (DPA(-•)) and G cation radical (G(+•)) are directly observed and characterized by their transient absorption and stimulated Raman spectra. For hairpins with two or more intervening A-T, the transient absorption spectra of DPA(-•) and the adenine polaron (An(+•)) are observed. In addition to characterization of the hole carriers, the dynamics of each step in the charge separation and charge recombination process as well as the overall efficiency of charge separation have been determined, thus providing a complete account of the mechanism and dynamics of photoinduced charge transport in these DNA hairpins. PMID:27082662

  9. Charge carrier concentration dependence of encounter-limited bimolecular recombination in phase-separated organic semiconductor blends

    Science.gov (United States)

    Heiber, Michael C.; Nguyen, Thuc-Quyen; Deibel, Carsten

    2016-05-01

    Understanding how the complex intermolecular configurations and nanostructure present in organic semiconductor donor-acceptor blends impacts charge carrier motion, interactions, and recombination behavior is a critical fundamental issue with a particularly major impact on organic photovoltaic applications. In this study, kinetic Monte Carlo (KMC) simulations are used to numerically quantify the complex bimolecular charge carrier recombination behavior in idealized phase-separated blends. Recent KMC simulations have identified how the encounter-limited bimolecular recombination rate in these blends deviates from the often used Langevin model and have been used to construct the new power mean mobility model. Here, we make a challenging but crucial expansion to this work by determining the charge carrier concentration dependence of the encounter-limited bimolecular recombination coefficient. In doing so, we find that an accurate treatment of the long-range electrostatic interactions between charge carriers is critical, and we further argue that many previous KMC simulation studies have used a Coulomb cutoff radius that is too small, which causes a significant overestimation of the recombination rate. To shed more light on this issue, we determine the minimum cutoff radius required to reach an accuracy of less than ±10 % as a function of the domain size and the charge carrier concentration and then use this knowledge to accurately quantify the charge carrier concentration dependence of the recombination rate. Using these rigorous methods, we finally show that the parameters of the power mean mobility model are determined by a newly identified dimensionless ratio of the domain size to the average charge carrier separation distance.

  10. Ultrafast dynamics of charge carrier photogeneration and geminate recombination in conjugated polymer:fullerene solar cells

    Science.gov (United States)

    Müller, J. G.; Lupton, J. M.; Feldmann, J.; Lemmer, U.; Scharber, M. C.; Sariciftci, N. S.; Brabec, C. J.; Scherf, U.

    2005-11-01

    We investigate the nature of ultrafast exciton dissociation and carrier generation in acceptor-doped conjugated polymers. Using a combination of two-pulse femtosecond spectroscopy with photocurrent detection, we compare the exciton dissociation and geminate charge recombination dynamics in blends of two conjugated polymers, MeLPPP [methyl-substituted ladder-type poly( p -phenylene)] and MDMO-PPV [poly(2-methoxy,5-(3,7-dimethyloctyloxy)-1,4-phenylenevinylene], with the electron accepting fullerene derivative PCBM [1-(3-methoxycarbonyl)-propyl-1-phenyl- (6,6)C61 ]. This technique allows us to distinguish between free charge carriers and Coulombically bound polaron pairs. Our results highlight the importance of geminate pair recombination in photovoltaic devices, which limits the device performance. The comparison of different materials allows us to address the dependence of geminate recombination on the film morphology directly at the polymer:fullerene interface. We find that in the MeLPPP:PCBM blend exciton dissociation generates Coulombically bound geminate polaron pairs with a high probability for recombination, which explains the low photocurrent yield found in these samples. In contrast, in the highly efficient MDMO-PPV:PCBM blend the electron transfer leads to the formation of free carriers. The anisotropy dynamics of electronic transitions from neutral and charged states indicate that polarons in MDMO-PPV relax to delocalized states in ordered domains within 500fs . The results suggest that this relaxation enlarges the distance of carrier separation within the geminate pair, lowering its binding energy and favoring full dissociation. The difference in geminate pair recombination concurs with distinct dissociation dynamics. The electron transfer is preceded by exciton migration towards the PCBM sites. In MeLPPP:PCBM the exciton migration time decays smoothly with increasing PCBM concentration, indicating a trap-free exciton hopping. In MDMO-PPV:PCBM, however

  11. Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors

    International Nuclear Information System (INIS)

    With the aim of understanding the relationships between organic small molecule field-effect transistors (FETs) and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies (average size and average roughness) of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit. (cross-disciplinary physics and related areas of science and technology)

  12. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    Science.gov (United States)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  13. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.

    2014-03-22

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  14. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

    Science.gov (United States)

    Liao, Bolin; Maznev, A. A.; Nelson, Keith A.; Chen, Gang

    2016-01-01

    There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon–phonon interactions, it has been a challenge to directly measure electron–phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump–probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron–phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron–phonon interaction on phonon transport in doped semiconductors. PMID:27731406

  15. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  16. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  17. Effects of Stress Activated Positive-Hole Charge Carriers on Radar Reflectance of Gabbro-Diorite

    Science.gov (United States)

    Williams, C.; Vanderbilt, V. C.; Dahlgren, R.; Cherukupally, A.; Freund, F. T.

    2011-12-01

    When load is applied to igneous or high-grade metamorphic rocks, trapped electron vacancy defects are activated and become mobile positive-hole charge carriers. These mobile charge carriers repel each other through Coulomb interactions and move outward from the stressed region. As large numbers of positive-holes reach the surface of the rock, this surface charge may cause an observable change in radar reflectance. In this experiment, a series of holes is drilled into a large gabbro-diorite boulder from the A.R. Wilson Quarry in Aromas, CA. Bustar, an expansive, non-explosive demolition agent, is poured into the holes while a 1.2 GHz radar system measures the amplitude of radar waves reflected from the rock's surface. Over the course of the experiment, the radar antenna is swept repeatedly across one face of the rock, pausing in one of twelve positions to collect data before moving to the next position. At the end of each sweep, the radar is calibrated against both a corner reflector and a flat-plate reflector. This sampling method is employed to detect and assign a cause to transient effects observed at any one location. An initial analysis of the radar data shows a high level of agreement between readings from the flat-plate and corner reflectors, supporting the use of flat-plate reflectors as a calibration source for this omnidirectional radar system. Fitting a trend to the amplitude of the wave reflected from the rock's surface is complicated by the presence of unexpected outliers and noise artifacts from the radar system itself. It appears that such a trend, if present, would likely indicate a change in amplitude of the reflected signal of less than 5 percent over the course of the experiment.

  18. Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes

    Science.gov (United States)

    Han, Dong-Pyo; Shim, Jong-In; Shin, Dong-Soo; Kim, Kyu-Sang

    2016-08-01

    Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance–voltage, current–voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices.

  19. Charge injection in an LED with a hybrid composite as the emissive layer

    International Nuclear Information System (INIS)

    Understanding and controlling charge transport are crucial to achieve optimized organic devices, including light emitting diodes. In this study, we investigate the charge injection in devices made with a hybrid composite (HC) containing Zn2SiO4:Mn (ZSP:Mn) in a polymeric blend consisting of poly(o-methoxyaniline) (POMA) and poly(vinylidene co-trifluorethylene) P(VDFTrFE), with the architecture ITO/HC/metallic electrode (ME). Charge injection was found to depend mainly on the POMA semiconducting phase. For ITO/HC/Au, an Ohmic junction was observed because the work function of ITO is close to that of Au, which also matches the energy levels of HC. Holes are injected through the HC/Au junction, as the highest occupied molecular orbital (HOMO) level of POMA matches the Fermi level of Au. The impedance spectroscopy data for the ITO/HC/ME devices were analyzed with a theoretical model where charge injection was assumed to occur via hopping with a distribution of potential energy barriers. The average hopping distance was estimated as 5.5 A and only the device with the Al electrode had the current limited by the interface mechanism (charge injection). For ITO/HC/Cu and ITO/HC/Au devices the limiting factor for the charge transport was the bulk resistance of the samples, in spite of the existence of a small interface energy barrier. The disorder parameter was 0.18 and 0.19 for the HC/Cu and HC/Al interfaces, respectively, which arises from the disordered nature of the hybrid material. The combination of the Cole-Cole model and the Miller-Abrahams function are a good approach to describe charge a.c. injection processes in disordered materials.

  20. Elemental isomerization processes for a photochromic diarylethene film based on carrier injection toward all-electrically operable organic memory

    Science.gov (United States)

    Tsujioka, Tsuyoshi; Yamamoto, Kazuki

    2016-06-01

    We propose a basic concept of all-electrically operable organic memory with a photochromic diarylethene (DAE) film based on a transistor structure, in which the DAE memory layer is recordable, erasable, and nondestructively readable by an electrical method. To realize such memory, we investigated each elementary process for recording, erasing, or nondestructive reading by current injection and electrostatic methods for the DAE layer. Both ring-opening and ring-closure isomerization reactions were confirmed for the injection of both carriers (electrons and holes). Hole injection induced ring-opening reaction only. These reaction modes can be utilized in the recording and erasing modes. Since no reactions for electron injection and current modulation based on photoisomerization were observed, electron current injection can be applied to nondestructive readout.

  1. Injection and transport of electric charge in a metal/copolymer structure

    Institute of Scientific and Technical Information of China (English)

    Li Dong-Mei; Yuan Xiao-Juan; Ma Jia-Sai; Liu De-Sheng

    2011-01-01

    The dynamical processes of the electric charge injection and transport from a metal electrode to the copolymer are investigated by using a nonadiabatic dynamic approach.The simulations are performed within the framework of an extended version of the one-dimensional Su-Schrieffer-Heeger (SSH) tight-binding model.It is found that the electric charge can be injected into the copolymer by increasing the applied voltage.For different structures of the copolymer,the critical voltage biases are different and the motion of the injected electric charge in the copolymer varies obviously.For the copolymer with a barrier-well-barrier configuration,the injected electric charge forms a wave packet due to the strong electron-lattice interaction in the barrier,then comes into the well and will be confined in it under a weak electric field.Under a medium electric field,the electric charge can go across the interface of two homopolymers and enter into the other potential barrier.For the copolymer with a well-barrier-well configuration,only under strong enough electric field can the electric charge transfer from the potential well into the barrier and ultimately reach a dynamic balance.

  2. Multi-turn injection into a heavy-ion synchrotron in the presence of space charge

    CERN Document Server

    Appel, Sabrina

    2014-01-01

    For heavy-ion synchrotrons an efficient Multi-Turn Injection (MTI) from the injector linac is crucial in order to reach the specified currents using the available machine acceptance. The beam loss during the MTI must not exceed the limits determined by machine protection and by the vacuum requirements. Especially for low energy and intermediate charge state ions, the beam loss at the injection septum can cause a degradation of the vacuum and a corresponding reduction of the beam lifetime. In order to optimize the injection of intense beams a very detailed simulation model was developed. Besides the closed orbit bump, lattice errors, the position of the septum and other aperture limiting components the transverse space charge force is included self-consistently. The space charge force causes a characteristic shift of the optimum tunes and a smoothing of the phase space density.

  3. Quantum states of charge carriers and longitudinal conductivity in double periodic n-type semiconductor lattice structures in electric field

    Energy Technology Data Exchange (ETDEWEB)

    Perov, A. A., E-mail: 19perov73@gmail.com; Penyagin, I. V. [Nizhny Novgorod State University (Russian Federation)

    2015-07-15

    Quantum states of charge carriers in double periodic semiconductor superlattices of n-type quantum dots with Rashba spin–orbit coupling in an electron gas have been calculated in the one-electron approximation in the presence of mutually perpendicular electric and magnetic fields. For these structures in weak constant electric field, the solution to the quasi-classical kinetic Boltzmann equation shows that the states of carriers in magnetic Landau minibands with negative differential conductivity are possible.

  4. Anisotropic charge carrier mobilities in bulk silicon at high electric fields

    CERN Document Server

    Becker, Julian; Klanner, Robert

    2010-01-01

    The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for $$ and $$ crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p$^+$nn$^+$ diodes in the temperature range between -30$^\\circ$C and 50$^\\circ$C and electric fields of 2$\\times$10$^3$~V/cm to 2$\\times$10$^4$~V/cm.

  5. Plastification en injection des polymères fonctionnels et chargés

    OpenAIRE

    Pham, Thuy Linh

    2013-01-01

    The main objective of the thesis is modelling and visualization of the phenomena of polymer plastication in the injection-moulding process. In injection moulding or in extrusion, plastication is the step during which polymer pellets are melted by the means of mechanical dissipation provided by a rotating screw and by thermal conduction coming from a heated metallic barrel. This step is crucial for melt thermal homogeneity, charge dispersion and fibre length preservation. Although there have b...

  6. Dispersion Matching of a Space Charge dominated Beam at Injection into the CERN PS Booster

    CERN Document Server

    Hanke, Klaus; Scrivens, Richard

    2005-01-01

    In order to match the dispersion at injection into the CERN PS Booster, the optics of the injection line was simulated using two different codes (MAD and TRACE). The simulations were benchmarked versus experimental results. The model of the line was then used to re-match the dispersion. Experimental results are presented for different optics of the line. Measurements with varying beam current show the independence of the measured quantity of space-charge effects.

  7. Charge exchange momentum transfer due to ion beam injection in partially ionized plasmas

    International Nuclear Information System (INIS)

    Time responses of a helium plasma to helium gas puffing without and with helium beam injection in a linear plasma device are experimentally investigated. Increase in the neutral density due to gas puffing is suppressed by ion beam injection. The experimental results show that a momentum transport from the ion beam to the puffed neutral particles occurs due to the charge exchange interaction, suggesting that charge exchange momentum transport is one of the processes responsible for the spatial redistribution of neutral atoms in partially ionized plasmas. (author)

  8. Bimodal behaviour of charge carriers in graphene induced by electric double layer.

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  9. Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

    Directory of Open Access Journals (Sweden)

    Petrović Jovana P.

    2009-01-01

    Full Text Available In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular and square (bimolecular is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V.

  10. Imaging the local density of free charge carriers in doped InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hauer, Benedikt; Taubner, Thomas [I. Institute of Physics (1A), RWTH Aachen Univerity, Sommerfeldstrasse 14, 52074 Aachen (Germany); Sladek, Kamil; Haas, Fabian; Schaepers, Thomas; Hardtdegen, Hilde [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich (Germany)

    2013-07-01

    Semiconductor nanowires are promising candidates for future nanoelectronic devices. While the bottom-up approach for their growth could simplify the device fabrication, their quantitative characterization remains challenging. We use scattering-type scanning near-field optical microscopy (s-SNOM) to investigate the local density of free electrons in Si-doped InAs nanowires grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). In s-SNOM the evanescent electric field at the apex of an illuminated tip is used to probe a sample at a strongly sub-wavelength resolution. This method is highly sensitive to variations in the sample permittivity around Re(ε) ∼ -2. The use of tunable mid-infrared lasers therefore allows addressing the plasma frequency of free charge carriers in highly doped nanowires. Here, we demonstrate that the sensitivity of s-SNOM is sufficient to detect a slight unintended variation in the carrier concentration during the growth process. Furthermore, using model calculations, we give an estimate of the local density of free electrons.

  11. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  12. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components

    International Nuclear Information System (INIS)

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively σ(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 107..108 V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  13. IR tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots[Infrared

    Energy Technology Data Exchange (ETDEWEB)

    Akhmetov, V.D.; Fateev, N.V.

    2000-07-01

    A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and 1 m in length. The method employs optical probing of ingots with laser-emitted radiation and includes laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot about 1 cm in size.

  14. Charge carrier transport at the nanoscale: Electron and hole transport in self-assembled discotic liquid crystals: Mobile ionic charges in nanocomposite solid electrolytes

    NARCIS (Netherlands)

    Haverkate, L.A.

    2013-01-01

    This thesis explores some fundamental aspects of charge carrier transport at the nanoscale. The study is divided in two parts. In the first part, the structural, dynamical and vibrational properties of discotic liquid crystals are studied in relation to the potential of these self-assembled ‘mesopha

  15. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    Science.gov (United States)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  16. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong

    2016-04-15

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.

  17. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    Science.gov (United States)

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

    2016-01-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  18. Charge Injection and Transport in Metal/Polymer Chains/Metal Sandwich Structure

    Institute of Scientific and Technical Information of China (English)

    LI Hai-Hong; LI Dong-Mei; LI Yuan; GAO Kun; LIU De-Sheng; XIE Shi-Jie

    2008-01-01

    @@ Using the tight-binding Su-Schrieffer-Heeger model and a nonadiabatic dynamic evolution method, we study the dynamic processes of the charge injection and transport in a metal/two coupled conjugated polymer chains/metal structure. It is found that the charge interchain transport is determined by the strength of the electric field and the magnitude of the voltage bias applied on the metal electrode. The stronger electric field and the larger voltage bias are both in favour of the charge interchain transport.

  19. To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

    KAUST Repository

    Mohammed, Omar F.

    2015-04-28

    Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

  20. Charge transport, injection, and photovoltaic phenomena in oligo(phenylenevinylene) based diodes

    NARCIS (Netherlands)

    Melzer, Christian; Krasnikov, Victor V.; Hadziioannou, Georges

    2003-01-01

    We report on the charge transport and injection phenomena of (E,E,E,E)-1,4-bis[(4-styryl)styryl]-2-methoxy-5-(2'-ethylhexoxy)benzene (MEH-OPV5) sandwiched between asymmetric contacts. The hole mobility of MEH-OPV5 was determined by means of transient electroluminescence. The steady-state current was

  1. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Performance of the CERN PSB at 160 MeV with $H^{-}$ charge exchange injection

    CERN Document Server

    AUTHOR|(CDS)2084247; Santoni, Claudio

    As part of the LHC Injectors Upgrade Project, the CERN PS Booster (PSB) will be upgraded with a H- charge exchange injection system and its injection energy will be raised from 50 MeV to 160 MeV to obtain the beam brightness required for the LHC High-Luminosity Upgrade. Space charge effects like beam losses and transverse emittance blow-up at injection are expected to be the main limitations towards the achievement of the required high brightness. Studies of beam dynamics in presence of space charge in order to evaluate the performances of the PSB after the Upgrade have been performed. The first part of the work consists of measurements in the present machine, to study the effects of space charge and its interplay with resonances and to have a good set of data for code benchmarking. The code chosen for the beam tracking in presence of space charge is PTC-Orbit (and PyOrbit). Necessary numerical convergence studies are presented together with a benchmark with the PSB measurements. Once assessed the code and it...

  3. Electrochemical studies of excited charge carriers with thin platinum film electronic devices in sulfuric and hydrochloric solution

    Energy Technology Data Exchange (ETDEWEB)

    Buerstel, Damian; Scheele, Michael; Barmscheid, Andreas; Stella, Kevin; Diesing, Detlef [Fakultaet fuer Chemie, Universitaet Duisburg-Essen, D-45117 Essen (Germany)

    2011-07-01

    Excited charge carriers induced by chemical processes like the adsorption or desorption of atomic hydrogen at metal surfaces have already been investigated under UHV conditions. These carriers can be detected by systems with an internal electric barrier, like MIM-(metal-insulator-metal), MIS- (metal-insulator-semiconductor) or MS- (metal-semiconductor) sensors. The internal barrier inside the sensors separates ground state carriers from excited carriers. It is an open question, whether electrochemical reactions on metal surfaces also evoke hot charge carriers. We study the electrochemical deposition of hydrogen (via H{sub upd}) on platinum and the oxidation of platinum in sulfuric and hydrochloric solution. As sensors Pt-TaOx-Ta, Pt-SiOx-Si and Pt-Si-sensors were used with 10-30 nm thick Pt films. By electrochemical cyclovoltametry and simultaneous recording of the current at the tantalum or silicon back electrode it is possible to detect voids (down to a fraction of 10{sup -3}) in the thin platinum film. 30 nm thick platinum films were found to cover the underlying layer completely. In this case the devices can be used to monitor deviations from the electronic equilibrium since excited carriers cause a device current through the internal barrier. Deviations from the electronic ground state were found in the case of the H{sub upd} formation.

  4. Understanding carrier injection effects upon the Reststrahlen band of SiC using transient infrared spectroscopy (Presentation Recording)

    Science.gov (United States)

    Spann, Bryan T.; Compton, Ryan; Dunkelberger, Adam D.; Long, James P.; Klein, Paul; Ratchford, Daniel; Caldwell, Josh D.; Owrutsky, Jeff

    2015-09-01

    Sub-diffractional confinement of light has led to advancements in imaging, metamaterials, nano-manufacturing, plasmonics, and other fields. One potential route to sub-diffractional confinement is via stimulated surface phonon polaritons (SPhPs). SPhPs couple infrared photons with optical phonons and consequently their lifetimes can be longer than surface plasmon polaritons (SPPs), whose lifetimes are dominated by electron scattering events. Thus, materials capable of generating SPhPs are of general interest to study. SPhPs are activated by photons with energies near the Reststrahlen band of semiconductors such as SiC. In this work we examine aspects of carrier dynamics by photo-injecting electrons into the SiC conduction band using a pulsed 355 nm laser and probe the resulting dynamics near the Reststrahlen band using a tunable CO2 laser. The fluence of the pump laser was varied to provide photo-injection levels ranging from ~1x10^17 to 1x10^19 free carriers. Probing the excited-state dynamics near the blue-edge of the Reststrahlen band resulted in complex transient behavior, showing both positive and negative changes in transient reflectance depending on the level of photo-injected carriers and probe energy. Numerical calculations of the SiC reflectance spectra with different doping levels were done to simulate the initial photo-injection level provided by the transient experiment. The computed spectra and the experimentally measured excited spectra for different photo-injection levels were compared and resulted in qualitative agreement.

  5. Facet-selective charge carrier transport, deactivation mechanism and stabilization of a Cu2O photo-electro-catalyst.

    Science.gov (United States)

    Li, Yang; Yun, Xiaogang; Chen, Hong; Zhang, Wenqin; Li, Yongdan

    2016-03-14

    A facet-dependent photo-deactivation mechanism of Cu2O was verified and reported, which is caused by the facet-dependent charge carrier transport. During irradiation, the {100} and {110} crystal facets are selectively corroded by the photo-generated holes, while the {111} facets are comparatively stable. PMID:26898270

  6. Investigation of field-dependent charge carrier generation and recombination in polymer based solar cells by transient extraction currents

    Energy Technology Data Exchange (ETDEWEB)

    Kniepert, Juliane; Blakesley, James; Neher, Dieter [University of Potsdam (Germany)

    2011-07-01

    There is an ongoing discussion as to whether photoinduced charge transfer in P3HT:PCBM solar cells leads to fully separated electrons and holes, independent of an electric field, or Coulombically bound interfacial charge pairs. While recent studies by R.A. Marsh et al. with transient absorption spectroscopy gave clear evidence for the formation and field-induced dissociation of bound polaron pairs, measurements by I.A. Howard et al. were in favour of hot exciton dissociation. Here, we present the results of bias-dependent Time Delayed Collection Field (TDCF) measurements to access directly the density of free charge carriers in P3HT:PCBM blends coated from dichlorobenzene. Solvent annealing was applied to yield a phase-separated morphology and the corresponding solar cells exhibit high values for the external quantum efficiency and fill factor. Our setup allowed us to follow the generation and recombination of photogenerated charges with a so far unattained time resolution of 40 ns. Our experiments show that the number of collected carriers is independent of the applied bias during pulsed illumination implying that extractable carriers in P3HT:PCBM blends are not generated by the field-assisted separation of bound polaron pairs. In addition, our experiments support the view that bimolecular recombination of free carriers is strongly suppressed in phase-separated P3HT:PBCM blends.

  7. Photo-induced charge transfer and relaxation of persistent charge carriers in polymer/nanocrystal composites for applications in hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Heinemann, Marc Daniel; Zutz, Folker; Kolny-Olesiak, Joanna; Borchert, Holgert; Riedel, Ingo; Parisi, Juergen [University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory, Oldenburg (Germany); Maydell, Karsten von [EWE Research Center for Energy Technology, Oldenburg (Germany)

    2009-12-09

    The photo-induced charge transfer and the dynamics of persistent charge carriers in blends of semiconducting polymers and nanocrystals are investigated. Regioregular poly(3-hexylthiophene) (P3HT) is used as the electron donor material, while the acceptor moiety is established by CdSe nanocrystals (nc-CdSe) prepared via colloidal synthesis. As a reference system, organic blends of P3HT and [6,6]-phenyl C{sub 61}-butyric acid methyl ester (PCBM) are studied as well. The light-induced charge transfer between P3HT and the acceptor materials is studied by photoluminescence (PL), photo-induced absorption (PIA) and light-induced electron spin resonance spectroscopy (LESR). Compared to neat P3HT samples, both systems show an intensified formation of polarons in the polymer upon photo-excitation, pointing out successful separation of photogenerated charge carriers. Additionally, relaxation of the persistent charge carriers is investigated, and significant differences are found between the hybrid composite and the purely organic system. While relaxation, reflected in the transient signal decay of the polaron signal, is fast in the organic system, the hybrid blends exhibit long-term persistence. The appearance of a second, slow recombination channel indicates the existence of deep trap states in the hybrid system, which leads to the capture of a large fraction of charge carriers. A change of polymer conformation due to the presence of nc-CdSe is revealed by low temperature LESR measurements and microwave saturation techniques. The impact of the different recombination behavior on the photovoltaic efficiency of both systems is discussed. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  8. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations.

    Science.gov (United States)

    Song, Linze; Shi, Qiang

    2015-05-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated. PMID:25956086

  9. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrov, P. A., E-mail: Aleksandrov-PA@nrcki.ru; Belova, N. E.; Demakov, K. D.; Shemardov, S. G. [Russian Research Centre “Kurchatov Institute” (Russian Federation)

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  10. Master equation approach to charge injection and transport in organic insulators.

    Science.gov (United States)

    Freire, José A; Voss, Grasiela

    2005-03-22

    We develop a master equation model of a disordered organic insulator sandwiched between metallic electrodes by treating as rate processes both the injection and the internal transport. We show how the master equation model allows for the inclusion of crucial correlation effects in the charge transport, particularly of the Pauli exclusion principle and of space-charge effects, besides, being dependent on just the microscopic form of the transfer rate between the localized electronic states, it allows for the investigation of different microscopic scenarios in the organic, such as polaronic hopping, correlated energy levels, interaction with image charge, etc. The model allows for a separate analysis of the injection and the recombination currents. We find that the disorder, besides increasing the injection current, eliminates the possibility of observation of a Fowler-Nordheim injection current at zero temperature, and that it does not alter the Schottky barrier size of the zero-field thermionic injection current from the value based on the energy difference between the electrode Fermi level and the highest occupied molecular orbital/lowest unoccupied molecular orbital levels in the organic, but it makes the Arrhenius temperature dependence appear at larger temperatures. We investigate how the I(V) characteristics of a device is affected by the presence of correlations in the site energy distribution and by the form of the internal hopping rate, specifically the Miller-Abrahams rate and the Marcus or small-polaron rate. We show that the disorder does not modify significantly the ebeta square root E field dependence of the net current due to the Schottky barrier lowering caused by the attraction between the charge and its image in the electrode. PMID:15836407

  11. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    Science.gov (United States)

    Barone, C.; Landi, G.; Mauro, C.; Neitzert, H. C.; Pagano, S.

    2015-10-01

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  12. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    Energy Technology Data Exchange (ETDEWEB)

    Barone, C., E-mail: cbarone@unisa.it; Mauro, C.; Pagano, S. [Dipartimento di Fisica “E.R. Caianiello” and CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano, Salerno (Italy); Landi, G.; Neitzert, H. C. [Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno (Italy)

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  13. Thickness dependent charge transfer states and dark carriers density in vacuum deposited small molecule organic photocell

    Science.gov (United States)

    Shekhar, Himanshu; Tzabari, Lior; Solomeshch, Olga; Tessler, Nir

    2016-10-01

    We have investigated the influence of the active layer thickness on the balance of the internal mechanisms affecting the efficiency of copper phthalocyanine - fullerene (C60) based vacuum deposited bulk heterojunction organic photocell. We fabricated a range of devices for which we varied the thickness of the active layer from 40 to 120 nm and assessed their performance using optical and electrical characterization techniques. As reported previously for phthalocyanine:C60, the performance of the device is highly dependent on the active layer thickness and of all the thicknesses we tried, the 40 nm thin active layer device showed the best solar cell characteristic parameters. Using the transfer matrix based optical model, which includes interference effects, we calculated the optical power absorbed in the active layers for the entire absorption band, and we found that this cannot explain the trend with thickness. Measurement of the cell quantum efficiency as a function of light intensity showed that the relative weight of the device internal processes changes when going from 40 nm to 120 nm thick active layer. Electrical modeling of the device, which takes different internal processes into account, allowed to quantify the changes in the processes affecting the generation - recombination balance. Sub gap external quantum efficiency and morphological analysis of the surface of the films agree with the model's result. We found that as the thickness grows the density of charge transfer states and of dark carriers goes up and the uniformity in the vertical direction is reduced.

  14. Plasma etching and its effect on minority charge carrier lifetimes and crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, S.; Lautenschlager, H.; Emanuel, G.; Luedemann, R. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany)

    2000-07-01

    Reactive ion etching (RIE), microwave enhanced RIE (MW-RIE), and microwave downstream etching (MWDSE) are investigated in terms of plasma-induced damage and its impact on minority charge carrier lifetimes in p-type silicon and on silicon solar cells. Ion bombardment and the gas mixture are found to be the crucial parameters in order to control the plasma-induced damage caused by SF{sub 6}/O{sub 2} plasma etching. RIE as well as MW-RIE processes can be optimised in a way that only minimum damage occurs. It may be annealed during temperature steps in the solar cell process, though. Only by dispensing with ion bombardment as in MWDSE plasma-induced damage can be completely avoided. Surface recombination velocities of S<10 cm/s are measured on 1 {omega}cm float zone silicon after MWDSE and SiN{sub x} passivation. MWDSE can therefore be used to substitute standard wet chemical cleaning of wafer surfaces without any loss in solar cell performance. (orig.)

  15. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya

    2015-02-12

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

  16. Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

    KAUST Repository

    Mondal, Rajib

    2011-01-01

    A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.

  17. Retrieval of Electronic Spectra of Charge Carriers in Organic Field-Effect Transistors from Charge Modulation Reflectance Spectra Distorted by Optical Interference

    Science.gov (United States)

    Miyata, Kiyoshi; Ishino, Yuta; Watanabe, Kazuya; Miwa, Kazumoto; Uemura, Takafumi; Takeya, Jun; Matsumoto, Yoshiyasu

    2013-06-01

    Charge modulation (CM) spectroscopy is useful for detecting and characterizing the electronic structure of charge carriers accumulated in organic field-effect transistors (OFETs). However, CM spectra are distorted by optical interference due to multiple reflections in OFETs particularly when reflection configurations are used. In this study, we demonstrated a method for retrieving the spectra of complex refractive indices of carriers from the distorted CM spectra by using a 4×4 matrix algorithm with general transition matrices. We tested this method by applying it to the CM spectra of a rubrene single-crystal FET measured at several incident angles of light. In spite of the strong distortion of the CM spectra, we could retrieve the spectrum of the imaginary part of refractive indices, which is similar to that observed in the transmission configuration. This method extends the applicability of CM spectroscopy to OFETs with opaque electrodes, where transmission configurations cannot possibly be applied.

  18. Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Martin, E-mail: martin.weis@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219 (Slovakia); Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@ome.pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-04-21

    Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

  19. Electric Field Analysis of Space Charge Injection from a Conductive Nano-Filler Electrode

    International Nuclear Information System (INIS)

    A simulation on the electric field distribution near the electrode is proposed to explain the reason for using nanosized carbon black mixed with ethylene vinyl acetate, as the electrode could lead to more charge injection into the polymer than using a deposited metal electrode. The electrode is simplified to a layer of conductive semi-spheres with fixed size and constant electric potential. By using the finite element method, it is found that both the size of the semi-spheres and the distance between adjacent semi-spheres could dramatically influence the electric field near the surface of the spheres; these are considered to be the two decisive factors for the charge injecting rate at electrodes of various materials. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

  20. Feedback Direct Injection Current Readout For Infrared Charge-Coupled Devices

    Science.gov (United States)

    Kubo, Kazuya; Wakayama, Hiroyuki; Kajihara, Nobuyuki; Awamoto, Kenji; Miyamoto, Yoshihiro

    1990-01-01

    We are proposing current readout for infrared charge coupled devices (IRCCDs) which can operate at higher temperatures. Feedback direct injection (FDI) consists of a simple amplifier of gain, AFDI was used in a medium-wavelength IRCCD operating at a high temperature. We made a 64-element HgCdTe linear IRCCD using FDI. The device operates at 195 K with an NETD of 0.5 K.

  1. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Science.gov (United States)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  2. Scanning capacitance microscope study of a SiO2/Si interface modified by charge injection

    Science.gov (United States)

    Tomiye, H.; Yao, T.

    We have investigated the local electrical properties of an SiO2/Si structure using a scanning capacitance microscope (SCaM) combined with an atomic force and a scanning tunneling microscope (AFM and STM). The electrical properties of the Si substrate and the SiO2/Si interface vary with position. In this experiment we have injected charge into the SiO2 and investigated the nature of charge storage at the SiO2/Si interface. We have used the combined microscope to apply a pulse to the SiO2/Si sample, causing charge to be trapped in the SiO2/Si interface. We could clearly detect the local variation of interface charge in a non-destructive manner using the SCaM and simultaneously by capacitance-voltage (C-V) characterization. The volume of the C-V curve shift along the voltage axis due to trapped charges is dependent upon the density of the trapped charges. In doing this experiment we show one of the many possible applications of the combined SCaM/AFM/STM.

  3. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya

    2015-08-10

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  4. Classical two-dimensional numerical algorithm for ?-Induced charge carrier advection-diffusion in Medipix-3 silicon pixel detectors

    Science.gov (United States)

    Biamonte, Mason; Idarraga, John

    2013-04-01

    A classical hybrid alternating-direction implicit difference scheme is used to simulate two-dimensional charge carrier advection-diffusion induced by alpha particles incident upon silicon pixel detectors at room temperature in vacuum. A mapping between the results of the simulation and a projection of the cluster size for each incident alpha is constructed. The error between the simulation and the experimental data diminishes with the increase in the applied voltage for the pixels in the central region of the cluster. Simulated peripheral pixel TOT values do not match the data for any value of applied voltage, suggesting possible modifications to the current algorithm from first principles. Coulomb repulsion between charge carriers is built into the algorithm using the Barnes-Hut tree algorithm. The plasma effect arising from the initial presence of holes in the silicon is incorporated into the simulation. The error between the simulation and the data helps identify physics not accounted for in standard literature simulation techniques.

  5. The Study Of Charge Carrier Transport On The Calamitic Liquid Crystals `` 5, 5'-Di-(Alkyl-Pyridin-Yl) - 2' Bithiophenes''

    Science.gov (United States)

    Shakya, Naresh; Pokhrel, Chandra; Ellman, Brett; Getmanenko, Yulia; Twieg, Robert

    2010-03-01

    The hole and electron mobilities in both types of calamitic liquid crystals C9 [5,5'-Di-(5-n-nonyl-pyridin-2-yl)-2,2'-bithiophenes] and C10 [5,5'-Di-(5-n-decyl-pyridin-2-yl)-2,2'-bithiophenes] were studied. The charge carrier mobilities were strongly electric field dependent. The mobilities decreased continuously with increase in the electric field up to a certain value, after which it became constant. Both types of charge carrier mobilities are independent of the temperature over our temperature range. The qualitative feature of our results could be tentatively explained by the Monte--Carlo modeling proposed by H Bassler. However, the results require further study for better understanding.

  6. Theoretical study on charge injection and transport properties of six emitters with push–pull structure

    International Nuclear Information System (INIS)

    Highlights: • We investigated six small organic molecules by using computational approaches. • This investigation is mainly based on the Marcus electron transfer theory. • The density functional theory (DFT) was used in this investigation. • The IP, EA, reorganization energy and transfer integral were calculated. • We analyzed the charge properties of the molecules by using the computed results. - Abstract: The charge injection and transport properties of six organic light-emitting molecules with push–pull structures were studied by theoretical calculations. The ground-state geometries for the neutral, cationic and anionic states were optimized using density functional theory. Subsequently, the ionization potentials and electron affinities were calculated. We computed the reorganization energies and the transfer integrals based on the Marcus electron transfer theory. It was found that in addition to being emitters the six compounds are multifunctional materials being capable of transport for both holes and electrons. Moreover, the double-branched compound DCDPC2 was found to have higher charge injection ability and better balanced charge transport properties than single-branched compounds

  7. Charge carrier trapping in highly-ordered lyotropic chromonic liquid crystal films based on ionic perylene diimide derivatives

    OpenAIRE

    Soroka, Pavlo V.; Vakhnin, Alexander Yu; Skryshevskiy, Yuriy A; Boiko, Oleksandr P.; Anisimov, Maksim I; Slominskiy, Yuriy L; Nazarenko, Vassili G.; Genoe, Jan; Kadashchuk, Andrey

    2014-01-01

    Charge carrier trapping in thin films of lyotropic chromonic liquid crystals (LCLCs) based on ionic perylene diimide derivative and in chemically-similar neutral N,N′-dipentyl-3,4,9,10-perylene-dicarboximide (PTCDI-C5) films is investigated by thermally-stimulated luminescence (TSL) technique. The LCLC films comprise elongated molecular aggregates featuring a long-range orientational order. The obtained results provide direct evidence for the improved energetic ordering (smaller effective ene...

  8. Injectable biodegradable carriers for the delivery of therapeutic agents and tissue engineering

    OpenAIRE

    Levato, Riccardo

    2015-01-01

    The design of smart biomaterial devices plays a key role to improve the way conventional therapies are being delivered, and to promote the development of new approaches for advanced therapies, such as regenerative medicine and targeted drug release. Injectable biodegradable materials, such as those consisting of suspensions of polymeric particles, are highly versatile devices that can be delivered through minimally-invasive injections. The physic-chemical properties of the particles can be en...

  9. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released t

  10. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl

    2013-01-31

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  11. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-04-07

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  12. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  13. Analysis of the effects of constant-current Fowler-Nordheim-tunneling injection with charge trapping inside the potential barrier

    Science.gov (United States)

    Lopez-Villanueva, J. A.; Jimenez-Tejada, J. A.; Cartujo, P.; Bausells, J.; Carceller, J. E.

    1991-10-01

    Charge trapping and the generation of interface traps in thermally grown SiO2 and its interface with silicon, produced by Fowler-Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been analyzed. This has afforded information about the position of the charge trapped in the oxide. No increase in the interface-trap density has been produced immediately after injection at 77 K, but, as the temperature is raised after injection, the growing of a peak of interface states has been observed. This phenomenon had been reported to be produced as a consequence of a previous hole trapping but, in this case, this intermediate stage of positive-charge building has not been observed. This effect is discussed, taking into account published models.

  14. Beam emittance growth in a proton storage ring employing charge exchange injection

    International Nuclear Information System (INIS)

    Recently, it has been shown that very large currents can be accumulated in medium energy proton storage rings by multiturn injection of an H- beam through a charge stripping medium. Since the particles are injected continuously into the same phase space, it is possible to increase the circulating beam brightness with respect to that of the incoming beam by a large factor. The stored protons pass repeatedly through the stripper, however, so that this phase space is gradually enlarged by scattering. The dependence of the circulating beam phase space (emittance) growth rate on the nature of the scattering process and on where it occurs in the storage ring matrix is considered. Since the motivation for this work arose in connection with the design of the proposed high-current storage ring at LAMPF, the results are focused on the specific parameters of that device. (U.S.)

  15. WFC3/UVIS Charge Injection Behavior: Results of an Initial Test

    Science.gov (United States)

    Bushouse, H.; Baggett, S.; Gilliland, R.; Noeske, K.; Petro, L.

    2011-01-01

    The WFC3 CCD Charge Injection (CI) capability has been tested on-orbit in Cycle18 calibration program 12348. Bias, dark, and science exposures of star cluster NGC 104 have been obtained in all commandable CI modes. Super-bias images were constructed for each CI mode and used to calibrate the NGC 104 exposures. Analysis has shown that the CI mode is working as expected, producing injected signals of ~15000 e-/pix. The CI signal is stable and repeatable to a level of a few e-/pix. CI rows in calibrated science images have mean residual signals of a few e-/pix with 1-sigma noise of ~18 e-/pix. Noise in science images in the rows in between CI varies from 3.5-6.5 e-/pix, compared to ~3.4 e-/pix in non-CI images.

  16. Calibration by precise charge injection of a sub-detector of CMS; Calibration par injection de charge du calorimetre electromagnetique de CMS

    Energy Technology Data Exchange (ETDEWEB)

    Yong-Wook Baek

    2001-01-26

    This thesis was carried out within the framework of the international collaboration which has the responsibility of the experience CMS (Compact Muon Solenoid) on LHC, at CERN. The physics of the fundamental particles which will be explored by this experiment is described within the standard model. The configuration of sub-detector of CMS is briefly described, with a particular weight on the read-out chain of the electromagnetic calorimeter. The work carried out to calibrate this chain by a precise charge injection at the input of preamplifiers is described. The 4 integrated circuits CTRL, TPLS, DAC, and injector which will constitute the components of this chain of calibration are described. The circuit of injection, which is the main circuit in this project, was imagined and developed at the laboratory in DMILL technology. This injector generates a signal which has a form identical to the signal of the detector. The measurements on the linearity of the injectors are presented. In order to know its behavior under real conditions (flow of neutrons {approx} 2 x 10{sup 13} neutrons/cm{sup 2}/10 years) where this circuit is installed in detector CMS, we submitted the prototypes of injector to irradiation and the results are summarized. The research and development on this circuit produced an integrated circuit hardened to irradiations, whose variation of slope is lower than 0.25% for an integrated of 2 x 10{sup 13} neutrons/cm{sup 2} and indestructible under 10{sup 15} neutrons/cm{sup 2}. This circuit has satisfactory qualities to be assembled on the electronic card which will treat the data of calorimeter ECAL of CMS. (author)

  17. Investigation of carrier injection mechanism in small molecular organic light emitting device with a mixed single organic layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki [University of Toyama, Graduate School of Science and Technology, Toyama (Japan)

    2011-03-15

    Injection properties of electrons and holes in a mixed single layer organic light emitting device with mixed small molecules tris-(8-hydroxy-quinoline) aluminum (Alq{sub 3}), 2,5-bis(6'-(2',2''-bipyridyl))-1,1-dimethyl-3,4-diphenylsilole (PyPySPyPy), 4'-bis[N-(1-napthyl)-N-phenyl-amino]biphenyl ({alpha}-NPD), and 5,6,11,12-tetraphenylnaphthacene (rubrene) were investigated using Au/MoO{sub 3} as hole and Al alloy as electron injection electrodes. On the basis of measuring the temperature dependence of currents through the interface between the electrodes and the mixed single organic layer, the carrier injection mechanism was primarily ascribed to the Schottky thermionic emission with the barrier height of 0.25 eV for holes and 0.67 eV for electrons. By adding the dopant material rubrene and the electron transport material PyPySPyPy into the mixed single layer, the barrier height of electrons could be reduced. The interfacial state analysis demonstrated that the electron barrier height was also dependent on the interfacial conditions of the device. (orig.)

  18. Formation of polaron pairs and time-resolved photogeneration of free charge carriers in π-conjugated polymers

    Science.gov (United States)

    Frankevich, Eugene; Ishii, Hisao; Hamanaka, Yasushi; Yokoyama, Takahiro; Fuji, Akihiko; Li, Sergey; Yoshino, Katsumi; Nakamura, Arao; Seki, Kazuhiko

    2000-07-01

    We have performed in the present work time-resolved experiments on poly(3-dodecyl-thiophene) (P3DDT) and poly(2,5-dioctyloxy-p-phenylene vinylene) (OO-PPV) films by directly probing the formation of charge carriers responsible for the cw photoconductivity within the time domain of -10 ps to 1 ns. Laser light pulses of 400 nm wavelength, 150 fs width, induced photoconductivity in a sample with a frequency 1 kHz. Red 800 nm light pulses delayed in respect to blue ones were revealed to affect the photoconductivity. The effect of the second pulses increased with the delay time. Red light induced changes of the photoconductivity were positive in OO-PPV, and negative in P3DDT. These results are rationalized as an evidence of delayed not immediate formation of free charge carriers. The carriers seem to be formed within 10 ps after the pumping pulse. A mechanism of formation of free polarons from polaron pair is suggested, which has permitted to explain main feature of the results including different signs of the effect of the red light in different polymers.

  19. Localized Charge Carrier Transport Properties of Zn1- x Ni x O/NiO Two-Phase Composites

    Science.gov (United States)

    Joshi, D. C.; Dasari, K.; Nayak, S.; Palai, R.; Suresh, P.; Thota, S.

    2016-04-01

    We report the localized charge carrier transport of two-phase composite Zn1- x Ni x O/NiO (0 ≤ x ≤ 1) using the temperature dependence of ac-resistivity ρ ac(T) across the Néel temperature T N (= 523 K) of nickel oxide. Our results provide strong evidence to the variable range hopping of charge carriers between the localized states through a mechanism involving spin-dependent activation energies. The temperature variation of carrier hopping energy ɛ h(T) and nearest-neighbor exchange-coupling parameter J ij(T) evaluated from the small poleron model exhibits a well-defined anomaly across T N. For all the composite systems, the average exchange-coupling parameter (J ij)AVG nearly equals to 70 meV which is slightly greater than the 60-meV exciton binding energy of pure zinc oxide. The magnitudes of ɛ h (˜0.17 eV) and J ij (˜11 meV) of pure NiO synthesized under oxygen-rich conditions are consistent with the previously reported theoretical estimation based on Green's function analysis. A systematic correlation between the oxygen stoichiometry and, ɛ h(T) and J ij(T) is discussed.

  20. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    CERN Document Server

    Smolyar, V A; Eremin, V V

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well

  1. Experimental and Theoretical Characterization of Artificial Muscles Based on Charge Injection in Carbon Nanotubes

    Science.gov (United States)

    Baughman, Ray

    2002-03-01

    We theoretically predicted that carbon nanotubes have the potential of providing at least an order of magnitude higher work capacity per cycle and stress generation capability, as compared with any prior-art material for directly converting electrical energy to mechanical energy. Experimental and theoretical results expand understanding of the nanotube actuation mechanism, and demonstrate that improvements in nanotube sheet and macrofiber properties correspondingly increase actuator performance. The actuation mechanism is electrochemical double-layer charge injection, which we show is dominated by band structure effects for low degrees of charge transfer and by intra-tube electrostatic repulsion when charge transfer is large. Measurements indicate that charge transfer is limited to the outer nanotubes in a nanotube bundle, which limits present performance (as does creep, nanotube misalignment, and poor inter-bundle stress transfer). Nevertheless, measured actuation stresses are 100 times that of natural muscle, and the measured gravimetric work-per-cycle (fixed load condition) is already much higher than for the hard ferroelectrics. Efforts to eliminate these problems (via debundling, nanotube welding, and improvements in nanotube spinning methods) will be described, together with the initial demonstration and analysis of chemically powered carbon nanotube muscles.

  2. Charge-carrier dynamics and Coulomb effects in semiconductor tetrapods; Ladungstraegerdynamik und Couloumbeffekte in Halbleiter-Tetrapods

    Energy Technology Data Exchange (ETDEWEB)

    Mauser, Christian

    2011-02-03

    In this thesis the Coulomb interaction and its influence on localization effects and dynamics of charge carriers in semiconductor nanocrystals were studied. In the studied nanostructures it deals with colloidal tetrapod heterostructures, which consist of a cadmium selenide (CdSe) core and four tetraedrical grown cadmium sulfide (CdS) respectively cadmium telluride (CdTe) legs, which exhibit a type-I respectively type-II band transition. The dynamics and interactions were studied by means of photoluminescence (PL) and absorption measurements both on the ensemble and on single nanoparticles, as well as time-resolved PL and transient absorption spectroscopy. Additionally theoretical simulations of the wave-function distributions were performed, which are based on the effective-mass approximation. The special band structure of the CdSe/CdS tetrapods offers a unique possibility to study the Coulomb interaction. The flat conduction band in these heterostructures makes the electron via the Coulomb interaction sensitive to the localization position of the hole within the structure. The valence band has instead a potential maximum in the CdSe, which leads to a directed localization of the hole and the photoluminescence of the core. Polarization-resolved measurements showed hereby an anisotropy of the photoluminescence, which could be explained by means of simulations of the wave-function distribution with an asymmetry at the branching point. Charge-carrier localization occur mainly both in longer structures and in trap states in the CdS leg and can be demonstrated in form of a dual emission from a nanocrystal. The charge-carrier dynamics of electron and hole in tetrapods is indeed coupled by the Coulomb interaction, however it cannot be completely described in an exciton picture. The coupled dynamics and the Coulomb interaction were studied concerning a possible influence of the geometry in CdSe/CdS nanorods and compared with those of the tetrapods. The interactions of the

  3. Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Elmasry, F. [Graduate School of Science, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Okubo, S. [Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Ohta, H., E-mail: hoht@kobe-u.ac.jp [Graduate School of Science, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Fujiwara, Y. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-05-21

    Er-concentration effect in GaAs;Er,O containing charge carriers (n-type, high resistance, p-type) has been studied by X-band Electron spin resonance (ESR) at low temperature (4.7 K < T < 18 K). Observed A, B, and C types of ESR signals were identical to those observed previously in GaAs:Er,O without carrier. The local structure around Er-2O centers is not affected by carriers because similar angular dependence of g-values was observed in both cases (with/without carrier). For temperature dependence, linewidth and lineshape analysis suggested the existence of Er dimers with antiferromagnetic exchange interaction of about 7 K. Moreover, drastic decrease of ESR intensity for C signal in p-type sample was observed and it correlates with the decrease of photoluminescence (PL) intensity. Possible model for the Er-2O trap level in GaAs:Er,O is discussed from the ESR and PL experimental results.

  4. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, Thangavel, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp; Ikeda, Susumu; Kumashiro, Ryotaro [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Shimotani, Hidekazu, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp; Shang, Hui [Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan); Tanigaki, Katsumi, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan)

    2015-07-27

    Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

  5. ReO{sub x} charge injection/blocking layers in organic electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Luo Jiaxiu; Xiao Lixin; Chen Zhijian; Qu Bo; Gong Qihuang, E-mail: xiao66@pku.edu.c, E-mail: qhgong@pku.edu.c [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2010-09-29

    The charge transport of rhenium oxide (ReO{sub x}) in organic electronic devices was investigated. The hole injection/transport was blocked and the electron injection/transport was enhanced with doping of ReO{sub x} in organic electronic devices. Thus the charge balance and efficiency of organic light-emitting diodes were improved; current efficiency of 2.7 cd A{sup -1} at 20 mA cm{sup -2} for the device with ReO{sub x} was higher than 1.5 cd A{sup -1} for the device without it. In the case of organic photovoltaic cells, the open-circuit voltage (V{sub oc}), 0.58 V, was higher compared with the device without ReO{sub x} (0.44 V) due to the improvement of interface properties. The power conversion efficiency was increased to 2.27% by the combination of ReO{sub x} (increases V{sub oc}) with poly(3,4-ethylenedioxythiophene) : poly(styrene-sulfonate) (improves hole transport to increase J{sub sc}) on the modification of the anode, higher than 1.85% for the device without ReO{sub x}.

  6. Effect of Mg doping on the structural and free-charge carrier properties of InN films

    International Nuclear Information System (INIS)

    We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 1018 cm−3 to 3.9 × 1021 cm−3. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 1018 cm−3 ≲ [Mg] ≲ 9.0 × 1019 cm−3. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed

  7. Dimensional changes as a function of charge injection for trans-polyacetylene: A density functional theory study

    Science.gov (United States)

    Sun, Guangyu; Kurti, Jeno; Kertesz, Miklos; Baughman, Ray H.

    2002-10-01

    Charge-induced dimensional changes allow conducting polymers and single walled carbon nanotubes to function as electromechanical actuators. The unit cell of the prototypical conducting polymer, trans-polyacetylene, was calculated as a function of charge injection using density functional theory in combination with ultrasoft pseudopotentials using the solid-state Vienna ab initio simulation package. Test calculations on the charged pyridinium molecular ion give results in good agreement with the experimental geometry. Strain versus charge relationships are predicted from dimensional changes calculated using a uniform background charge ("jellium") for representing the counterions, which we show provides results consistent with experiment for doped polyacetylenes. These jellium calculations are consistent with further presented calculations that include specific counterions, showing that hybridization between the guest dopant ions and the host polyacetylene chains is unimportant. The lack of guest-host orbital hybridization allows a qualitative rigid band interpretation of the amount of charge transfer for both acceptor and donor doping. For polyacetylene, asymmetry of strain along the chain with respect to the sign of the charge is predicted: negative charge elongates and positive charge shortens the polymer. For charge less than 0.05e per carbon, an approximately linear dependence is obtained for the dependence of chain-direction strain on the amount of injected charge.

  8. Construction of a Direct Water-Injected Two-Stroke Engine for Phased Direct Fuel Injection-High Pressure Charging Investigations

    Science.gov (United States)

    Somsel, James P.

    1998-01-01

    The development of a water injected Orbital Combustion Process (OCP) engine was conducted to assess the viability of using the powerplant for high altitude NASA aircraft and General Aviation (GA) applications. An OCP direct fuel injected, 1.2 liter, three cylinder, two-stroke engine has been enhanced to independently inject water directly into the combustion chamber. The engine currently demonstrates low brake specific fuel consumption capability and an excellent power to weight ratio. With direct water injection, significant improvements can be made to engine power, to knock limits/ignition advance timing, and to engine NO(x) emissions. The principal aim of the testing was to validate a cyclic model developed by the Systems Analysis Branch at NASA Ames Research Center. The work is a continuation of Ames' investigations into a Phased Direct Fuel Injection Engine with High Pressure Charging (PDFI-ITPC).

  9. Controlled Electron Injection into Plasma Accelerators and SpaceCharge Estimates

    Energy Technology Data Exchange (ETDEWEB)

    Fubiani, Gwenael J.

    2005-09-01

    Plasma based accelerators are capable of producing electron sources which are ultra-compact (a few microns) and high energies (up to hundreds of MeVs) in much shorter distances than conventional accelerators. This is due to the large longitudinal electric field that can be excited without the limitation of breakdown as in RF structures.The characteristic scale length of the accelerating field is the plasma wavelength and for typical densities ranging from 1018 - 1019 cm-3, the accelerating fields and scale length can hence be on the order of 10-100GV/m and 10-40 mu m, respectively. The production of quasimonoenergetic beams was recently obtained in a regime relying on self-trapping of background plasma electrons, using a single laser pulse for wakefield generation. In this dissertation, we study the controlled injection via the beating of two lasers (the pump laser pulse creating the plasma wave and a second beam being propagated in opposite direction) which induce a localized injection of background plasma electrons. The aim of this dissertation is to describe in detail the physics of optical injection using two lasers, the characteristics of the electron beams produced (the micrometer scale plasma wavelength can result in femtosecond and even attosecond bunches) as well as a concise estimate of the effects of space charge on the dynamics of an ultra-dense electron bunch with a large energy spread.

  10. Controlled Electron Injection into Plasma Accelerators and SpaceCharge Estimates

    Energy Technology Data Exchange (ETDEWEB)

    Fubiani, Gwenael G.J. [Univ. of California, Berkeley, CA (United States)

    2005-09-01

    Plasma based accelerators are capable of producing electron sources which are ultra-compact (a few microns) and high energies (up to hundreds of MeVs) in much shorter distances than conventional accelerators. This is due to the large longitudinal electric field that can be excited without the limitation of breakdown as in RF structures.The characteristic scale length of the accelerating field is the plasma wavelength and for typical densities ranging from 1018 - 1019 cm-3, the accelerating fields and scale length can hence be on the order of 10-100GV/m and 10-40 μm, respectively. The production of quasimonoenergetic beams was recently obtained in a regime relying on self-trapping of background plasma electrons, using a single laser pulse for wakefield generation. In this dissertation, we study the controlled injection via the beating of two lasers (the pump laser pulse creating the plasma wave and a second beam being propagated in opposite direction) which induce a localized injection of background plasma electrons. The aim of this dissertation is to describe in detail the physics of optical injection using two lasers, the characteristics of the electron beams produced (the micrometer scale plasma wavelength can result in femtosecond and even attosecond bunches) as well as a concise estimate of the effects of space charge on the dynamics of an ultra-dense electron bunch with a large energy spread.

  11. Chemical vapour deposition diamond. Charge carrier movement at low temperatures and use in time-critical applications

    International Nuclear Information System (INIS)

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, over laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  12. Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

    CERN Document Server

    Jansen, Hendrik; Pernegger, Heinz

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  13. Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules

    Science.gov (United States)

    Hermannstädter, C.; Beirne, G. J.; Witzany, M.; Heldmaier, M.; Peng, J.; Bester, G.; Wang, L.; Rastelli, A.; Schmidt, O. G.; Michler, P.

    2010-08-01

    We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior in dot molecules. It results in a faster population decay and can be strongly influenced by the tuning electric field and intermolecular Coulomb energies. A rate equation model is developed and compared to the experimental data to gain more insight into the charge transfer and tunneling mechanisms. Nonresonant (phonon-mediated) electron tunneling which changes the molecular exciton character from direct to indirect, and vice versa, is found to be the dominant tunable decay mechanism of excitons besides radiative recombination.

  14. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    Science.gov (United States)

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials. PMID:26972104

  15. Charge carrier photogeneration and recombination in ladder-type poly(para-phenylene): Interplay between impurities and external electric field

    Science.gov (United States)

    Gulbinas, V.; Hertel, D.; Yartsev, A.; Sundström, V.

    2007-12-01

    Charge carrier generation and decay in m -LPPP polymer films were examined by means of femtosecond transient absorption spectroscopy in the time window of 100fs-15ns . Two modes of polaron formation with distinct behavior were identified, impurity induced in the absence of an external electric field and electric field induced in pristine film. While field induced charge generation is relatively slow, occurring throughout the excited state lifetime, the rate of impurity induced charge generation is much faster and depends on excitation wavelength; it occurs on the several hundred femtosecond time scale under excitation within the main absorption band, but excitation into the red wing of the absorption band results in charge generation within less than 100fs . Polaron decay through geminate electron-hole recombination occurs with widely distributed lifetimes, from ˜0.8ns to microseconds; the polarons characterized by the shortest decay time have a redshifted absorption spectrum (as compared to more long-lived polarons) and are attributed to tightly bound polaron pairs.

  16. Determination of Effective Stability Constants of Ion-Carrier Complexes in Ion Selective Nanospheres with Charged Solvatochromic Dyes.

    Science.gov (United States)

    Xie, Xiaojiang; Bakker, Eric

    2015-11-17

    Ionophores are widely used ion carriers in ion selective sensors. The effective stability constant (β) is a key physical parameter providing valuable guidelines to the design of ionophores and carrier-based ion selective sensors. The β value of ion-carrier complex in plasticized poly(vinyl chloride) (PVC) membranes and solutions have been determined in the past by various techniques, but most of them are difficult to implement at the nanoscale owing to the ultrasmall sample volume. A new methodology based on charged solvatochromic dyes is introduced here for the first time to determine β values directly within ion selective nanospheres. Four ionophores with different selectivities toward Na(+), K(+), Ca(2+), and H(+), respectively, are successfully characterized in nanospheres composed of triblock copolymer Pluronic F-127 and bis(2-ethylhexyl) sebacate. The values determined in the nanospheres are smaller compared with those in plasticized PVC membranes, indicating a more polar nanosphere microenvironment and possible uneven distribution of the sensing components in the interfacial region. PMID:26502342

  17. Absorption of Light by Free Charge Carriers in the Crystalline CdS Under Intense Electron Irradiation

    Science.gov (United States)

    Kulikov, V. D.; Yakovlev, V. Yu.

    2016-09-01

    The process of light absorption by free electrons in the crystalline cadmium sulfide under irradiation by a nanosecond electron beam with the current density of 8-100 A/cm2 is studied. A superlinear increase in optical absorption is observed if the beam current density is increased from ~8 to 12 A/cm2. The nature of light absorption by thermalized electrons corresponds to the scattering on lattice defects. An increase in the exponent of the power dependence of light absorption on the wavelength with increasing beam current density is associated with the single and double ionization of donors and acceptors. It is concluded that accumulation of charge carriers occurs without capture by traps due to their impact ionization by secondary electrons, whose energy in the thermalization stage is comparable with the band gap of the crystal. According to the results of calculations, the capture cross section of electrons by holes at quadratic recombination is ~10-20 cm2, the Auger recombination coefficient is ~10-31 cm6•s-1, and the charge carrier concentration is ~1.3•1018-1.5•1019 cm-3.

  18. Tungsten-based nanomaterials (WO3 & Bi2WO6): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

    Science.gov (United States)

    Girish Kumar, S.; Koteswara Rao, K. S. R.

    2015-11-01

    Heterogeneous photocatalysis is an ideal green energy technology for the purification of wastewater. Although titania dominates as the reference photocatalyst, its wide band gap is a bottleneck for extended utility. Thus, search for non-TiO2 based nanomaterials has become an active area of research in recent years. In this regard, visible light absorbing polycrystalline WO3 (2.4-2.8 eV) and Bi2WO6 (2.8 eV) with versatile structure-electronic properties has gained considerable interest to promote the photocatalytic reactions. These materials are also explored in selective functional group transformation in organic reactions, because of low reduction and oxidation potential of WO3 CB and Bi2WO6 VB, respectively. In this focused review, various strategies such as foreign ion doping, noble metal deposition and heterostructuring with other semiconductors designed for efficient photocatalysis is discussed. These modifications not only extend the optical response to longer wavelengths, but also prolong the life-time of the charge carriers and strengthen the photocatalyst stability. The changes in the surface-bulk properties and the charge carrier transfer dynamics associated with each modification correlating to the high activity are emphasized. The presence of oxidizing agents, surface modification with Cu2+ ions and synthesis of exposed facets to promote the degradation rate is highlighted. In depth study on these nanomaterials is likely to sustain interest in wastewater remediation and envisaged to signify in various green energy applications.

  19. Hall effect in the low charge-carrier density ferromagnet UCo{sub 0.5}Sb{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tran, V.H.; Troc, R.; Bukowski, Z. [W. Trzebiatowski Institute for Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wroclaw (Poland); Paschen, S.; Steglich, F. [Max-Planck Institut fuer Chemische Physik fester Stoffe, 01187 Dresden (Germany)

    2006-01-01

    The Hall coefficient R {sub H} of ferromagnetic UCo{sub 0.5}Sb{sub 2} (T {sub C}=64.5 K) has been measured on a single crystal in the temperature range 2-300 K and in magnetic fields up to 7 T. The values of the normal R{sub 0} and anomalous R{sub s} coefficients were estimated by comparing R{sub H}(B) with magnetisation M (B) data. The charge carrier concentration is found to decrease rapidly when the system undergoes a transition to the ferromagnetic ordered state. The charge mobility appears to fall down by as much as two orders of magnitude for temperatures from 20 K to 2 K. We ascribe this behaviour to an enormous decrease of the carrier collision time. The temperature dependencies of the Hall mean free path and mobility can be consistently interpreted within the 2D-weak localization feature. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    Science.gov (United States)

    Pal, P.; Ghosh, A.

    2016-07-01

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  1. Charge Carrier Transport Through the Interface Between Hybrid Electrodes and Organic Materials in Flexible Organic Light Emitting Diodes.

    Science.gov (United States)

    Zhou, Huanyu; Cheong, Hahn-Gil; Park, Jin-Woo

    2016-05-01

    We investigated the electronic properties of composite-type hybrid transparent conductive electrodes (h-TCEs) based on Ag nanowire networks (AgNWs) and indium tin oxide (ITO). These h-TCEs were developed to replace ITO, and their mechanical flexibility is superior to that of ITO. However, the characteristics of charge carriers and the mechanism of charge-carrier transport through the interface between the h-TCE and an organic material are not well understood when the h-TCE is used as the anode in a flexible organic light-emitting diode (f-OLED). AgNWs were spin coated onto polymer substrates, and ITO was sputtered atop the AgNWs. The electronic energy structures of h-TCEs were investigated by ultraviolet photoelectron spectroscopy. f-OLEDs were fabricated on both h-TCEs and ITO for comparison. The chemical bond formation at the interface between the h-TCE and the organic layer in f-OLEDs was investigated by X-ray photoelectron spectroscopy. The performances of f-OLEDs were compared based on the analysis results. PMID:27483896

  2. Electron-phonon coupling in crystalline organic semiconductors: Microscopic evidence for nonpolaronic charge carriers

    OpenAIRE

    Vukmirovic N.; Bruder C.; Stojanovic V.M.

    2012-01-01

    We consider electron(hole)-phonon coupling in crystalline organic semiconductors, using naphthalene for our case study. Employing a first-principles approach, we compute the changes in the self-consistent Kohn-Sham potential corresponding to different phonon modes and go on to obtain the carrier-phonon coupling matrix elements (vertex functions). We then evaluate perturbatively the quasiparticle spectral residues for electrons at the bottom of the lowest-unoccupied- (LUMO) and holes at the to...

  3. In vivo charge injection limits increased after 'unsafe' stimulation

    DEFF Research Database (Denmark)

    Meijs, Suzan; Sørensen, Søren; Rechendorff, Kristian;

    2015-01-01

    The effect of unsafe stimulation on charge injection limits (Qinj) and pulsing capacitance (Cpulse) was investigated. Four stimulation protocols were applied: 20 mA – 200 and 400 Hz, 50 mA – 200 and 400 Hz. Increasing Qinj and Cpulse were observed for all stimulation protocols. Corrosion...... was not observed with any of the stimulation protocols and no tissue damage was observed for the 20 mA – 200 Hz stimulation group. This indicates that the ‘safe potential window’ may not be applicable in vivo, as no damage was done stimulating with 20 mA at 200 Hz, while damage was done using the same current...... at 400 Hz....

  4. Laser photoionization of H0 beams for charge-changing injection

    International Nuclear Information System (INIS)

    The two-step charge-changing injection used in the Los Alamos Proton Storage Ring (PSR) requires stripping of H- to H0 by high magnetic fields and subsequent stripping of H0 to H+ by a carbon foil. The authors consider single- and multiphoton laser ionization as alternatives to using a fragile foil. The multiphoton case is of possible interest for selection of practical lasers, which tend to have increased power output at higher wavelengths. The formulas derived express the necessary laser powers for ionization of monoenergetic H0 beams; they also hold for beams of particles other than atomic hydrogen. The numerical examples given are for the 800-MeV PSR beam with momentum spread taken into account. Additionally, they discuss selective stripping as an implication of the inherent energy selectivity of the photoionization process

  5. Laser photoionization of H0 beams for charge-changing injection

    International Nuclear Information System (INIS)

    The two-step charge-changing injection used in the Los Alamos Proton Storage Ring (PSR) requires stripping of H- to H0 by high magnetic fields and subsequent stripping of H0 to H+ by a carbon foil. We consider single- and multiphoton laser ionization as alternatives to using a fragile foil. The multiphoton case is of possible interest for selection of practical lasers, which tend to have increased power output at higher wavelengths. The formulas derived express the necessary laser powers for ionization of monoenergetic H0 beams; they also hold for beams of particles other than atomic hydrogen. The numerical examples given are for the 800-MeV PSR beam with momentum spread taken into account. Additionally, we discuss selective stripping as an implication of the inherent energy selectivity of the photoionization process

  6. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  7. Ionic liquid based lithium battery electrolytes: charge carriers and interactions derived by density functional theory calculations.

    Science.gov (United States)

    Angenendt, Knut; Johansson, Patrik

    2011-06-23

    The solvation of lithium salts in ionic liquids (ILs) leads to the creation of a lithium ion carrying species quite different from those found in traditional nonaqueous lithium battery electrolytes. The most striking differences are that these species are composed only of ions and in general negatively charged. In many IL-based electrolytes, the dominant species are triplets, and the charge, stability, and size of the triplets have a large impact on the total ion conductivity, the lithium ion mobility, and also the lithium ion delivery at the electrode. As an inherent advantage, the triplets can be altered by selecting lithium salts and ionic liquids with different anions. Thus, within certain limits, the lithium ion carrying species can even be tailored toward distinct important properties for battery application. Here, we show by DFT calculations that the resulting charge carrying species from combinations of ionic liquids and lithium salts and also some resulting electrolyte properties can be predicted. PMID:21591707

  8. Exciton and charge carrier dynamics in few-layer WS2

    Science.gov (United States)

    Vega-Mayoral, Victor; Vella, Daniele; Borzda, Tetiana; Prijatelj, Matej; Tempra, Iacopo; Pogna, Eva A. A.; Dal Conte, Stefano; Topolovsek, Peter; Vujicic, Natasa; Cerullo, Giulio; Mihailovic, Dragan; Gadermaier, Christoph

    2016-03-01

    Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better separation of the spectral features compared to MoS2 allows us to resolve a previously undetected process: these charges diffuse through the samples and get trapped at defects, such as flake edges or grain boundaries, causing an appreciable change of their transient absorption spectra. This finding opens the way to further studies of traps in TMD samples with different defect contents.Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better

  9. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    International Nuclear Information System (INIS)

    Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10−4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic

  10. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    Science.gov (United States)

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-01

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc. PMID:27371816

  11. Extraction of photo-generated charge carriers from polymer-fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Koster, LJA; Mihailetchi, VD; Blom, PWM; Heremans, PL; Muccini, M; Hofstraat, H

    2004-01-01

    Two models describing charge extraction from insulators have been used to interpret the experimental photocurrent data of 20:80 wt% blends of poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-p-phenylene vinylene) (MDMO-PPV) and [6,6]phenyl C-61,-butyric acid methyl ester (PCBM) bulk heterojunction solar ce

  12. Femtosecond insights into direct electron injection in dye anchored ZnO QDs following charge transfer excitation.

    Science.gov (United States)

    Kumar, Pushpendra; Kumar, Sunil; Ghosh, Subrata; Pal, Suman Kalyan

    2016-07-27

    The role of the charge transfer (CT) state in interfacial electron transfer in dye-sensitized semiconductor nanocrystals is still poorly understood. To address this problem, femtosecond transient absorption (TA) spectroscopy is used as a probe to investigate the electron injection across a newly synthesized coumarin dye (8-hydroxy-2-oxo-4-phenyl-2 benzo[h]chromene-3-carbonitrile, coded BC5) and ZnO quantum dots (QDs). Steady state and time-resolved spectroscopic measurements reveal that BC5 dye interacts strongly with ZnO QDs in the ground state forming a CT complex. The BC5-ZnO QD complex absorbs more towards red compared to only the dye and QDs, and emits fluorescence due to radiative recombination of photogenerated charges. The formation of charges following the excitation of the CT complex has been demonstrated by observing the signature of dye radical cations and electrons in the conduction band (CB) of the QDs in the TA spectra. The TA signals of these charges grow sharply as a result of ultrafast direct electron injection into the QD. We have monitored the complete dynamics of photogenerated charges by measuring the TA signals of the charges up to a couple of nanoseconds. The injected electrons that are free or shallowly trapped recombine with a time constant of 625 fs, whereas deeply trapped electrons disappear slowly (526 ps) via radiative recombination. Furthermore, theoretical studies based on ab initio calculations have been carried out to complement the experimental findings. PMID:27412034

  13. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers

    Science.gov (United States)

    Sun, Baichuan; Barnard, Amanda S.

    2016-07-01

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove

  14. Balanced charge injection in multilayer polymer light-emitting diode with water soluble nonconjugated polymer dispersed by ionic compounds

    Science.gov (United States)

    Park, Dong-Kyu; Chun, A.-Rum; Kim, Soo-Hong; Kim, Min-Sook; Kim, Choong-Gi; Kwon, Tae-Woo; Cho, Seong-Jin; Woo, Hyung-Suk; Lee, Jae-Gyoung; Lee, Suck-Hyun; Guo, Zhi-Xin

    2007-07-01

    The authors have fabricated highly efficient polymeric light-emitting diode (PLED) from ionic compound dispersed water soluble nonconjugated polymer, polyurethane (PU), which was used as an ultrathin hole blocking and electron injection layer (HB-EIL) on the top of commercially available blue-emitting polymer, polyfluorene. The device with HB-EIL showed a maximum quantum efficiency of 1.7%, while the one without HB-EIL showed an efficiency of 0.6%. They propose that the better performance in PLED with PU layer was due to a well balanced charge injection in emitting layer after the enhanced electron injection due to ionic compound in the insulating PU layer.

  15. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  16. Empirical in operando analysis of the charge carrier dynamics in hematite photoanodes by PEIS, IMPS and IMVS.

    Science.gov (United States)

    Klotz, Dino; Ellis, David Shai; Dotan, Hen; Rothschild, Avner

    2016-09-14

    In this Perspective, we introduce intensity modulated photocurrent/voltage spectroscopy (IMPS and IMVS) as powerful tools for the analysis of charge carrier dynamics in photoelectrochemical (PEC) cells for solar water splitting, taking hematite (α-Fe2O3) photoanodes as a case study. We complete the picture by including photoelectrochemical impedance spectroscopy (PEIS) and linking the trio of PEIS, IMPS and IMVS, introduced here as photoelectrochemical immittance triplets (PIT), both mathematically and phenomenologically, demonstrating what conclusions can be extracted from these measurements. A novel way of analyzing the results by an empirical approach with minimal presumptions is introduced, using the distribution of relaxation times (DRT) function. The DRT approach is compared to conventional analysis approaches that are based on physical models and therefore come with model presumptions. This work uses a thin film hematite photoanode as a model system, but the approach can be applied to other PEC systems as well. PMID:27524381

  17. Magnetic dipole self-organization of charge carriers in high-temperature superconductors and kinetics of phase transformation

    CERN Document Server

    Voronov, A V; Shuvalov, V V

    2001-01-01

    The phenomenological model, describing the magnetic dipole self-organization of charge carriers (formation of so-called stripe-structures and energy gap in the states spectrum), is designed for interpreting the data on the nonstationary nonlinear spectroscopy of the high-temperature superconductors. It is shown that after fast heating of the superconducting sample the kinetics of the subsequent phase transition depends on the initial temperature T. The destruction of the stripe-structures at low overheating T* < T < T sub m approx = (1.4-1.5)T*, whereby T sub c and T* approx = T sub c are the temperatures of transition into the superconducting state and formation of the stripe-structures occurs slowly (the times above 10 sup - sup 9 s) in spite of practically instantaneous disappearance of the superconductivity

  18. Low Exciton-Phonon Coupling, High Charge Carrier Mobilities, and Multiexciton Properties in Two-Dimensional Lead, Silver, Cadmium, and Copper Chalcogenide Nanostructures.

    Science.gov (United States)

    Ding, Yuchen; Singh, Vivek; Goodman, Samuel M; Nagpal, Prashant

    2014-12-18

    The development of two-dimensional (2D) nanomaterials has revealed novel physical properties, like high carrier mobilities and the tunable coupling of charge carriers with phonons, which can enable wide-ranging applications in optoelectronic and thermoelectric devices. While mechanical exfoliation of graphene and some transition metal dichalcogenides (e.g., MoS2, WSe2) has enabled their fabrication as 2D semiconductors and integration into devices, lack of similar syntheses for other 2D semiconductor materials has hindered further progress. Here, we report measurements of fundamental charge carrier interactions and optoelectronic properties of 2D nanomaterials made from two-monolayers-thick PbX, CdX, Cu2X, and Ag2X (X = S, Se) using colloidal syntheses. Extremely low coupling of charge carriers with phonons (2-6-fold lower than bulk and other low-dimensional semiconductors), high carrier mobilities (0.2-1.2 cm(2) V(-1) s(-1), without dielectric screening), observation of infrared surface plasmons in ultrathin 2D semiconductor nanostructures, strong quantum-confinement, and other multiexcitonic properties (different phonon coupling and photon-to-charge collection efficiencies for band-edge and higher-energy excitons) can pave the way for efficient solution-processed devices made from these 2D nanostructured semiconductors. PMID:26273976

  19. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  20. Optical conductivity of charge carriers interacting with a two-level systems reservoir

    Science.gov (United States)

    Villares Ferrer, A.; Caldeira, A. O.; Smith, C. Morais

    2006-11-01

    Using the functional-integral method we investigate the effective dynamics of a charged particle coupled to a set of two-level systems as a function of temperature and external electric field. The optical conductivity and the direct current (dc) resistivity induced by the reservoir are computed. Three different regimes are found depending on the two-level system spectral function, which may lead to a non-Drude optical conductivity in a certain range of parameters. Our results contrast to the behavior found when considering the usual bath of harmonic oscillators which we are able to recover in the limit of very low temperatures.

  1. Phenylcarbazole and phosphine oxide/sulfide hybrids as host materials for blue phosphors: effectively tuning the charge injection property without influencing the triplet energy.

    Science.gov (United States)

    Wu, Jie; Liao, Yi; Wu, Shui-Xing; Li, Hai-Bin; Su, Zhong-Min

    2012-02-01

    Compared with red and green phosphorescent organic light-emitting diodes (PHOLEDs), efficient blue PHOLEDs are still scarce, because it is difficult for the host materials for blue phosphors to achieve a trade-off between a wide triplet energy and good charge injection properties. We theoretically studied a series of hybrid phosphine oxide/sulfide-phenylcarbazole host molecules (PO(S)PhCBZs) for blue phosphors through different linkage modes between phenylcarbazole (PhCBZ) and phosphine oxide/sulfide (PO/PS) moieties. The results indicate that the singlet excitons of all PO(S)-PhCBZs are delocalized over the entire molecule with intramolecular charge transfer (ICT) character and different linkage modes cause various degrees of ICT, which determines the injection abilities of carriers from neighboring layers following the order: PO-Phs (PO linked to the phenyl of PhCBZ) > para-POs (PO linked to the para-positions of PhCBZ) > meta-POs (PO linked to the meta-positions of PhCBZ). By contrast, the triplet excitons are confined to the carbazole unit for all PO(S)-PhCBZs. High triplet energies (E(T)) are therefore kept up for all systems, except for para-POs showing a slight drop in E(T) due to the delocalization of their triplet excitons to the phenyl moiety of PhCBZ. All hybrid PO(S)-PhCBZs, especially PO(s)-Phs, exhibit an enhancement in electron injection and triplet energy compared with the most widely used host material (N,N-dicarbazolyl-3,5-benzene) for blue PHOLEDs, and thereby have great potential for application in highly efficient light emitting diodes. PMID:22193557

  2. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Energy Technology Data Exchange (ETDEWEB)

    Dell' Erba, Giorgio; Natali, Dario [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano (Italy); Luzio, Alessandro; Caironi, Mario, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu [Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Noh, Yong-Young, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715 (Korea, Republic of)

    2014-04-14

    Ambipolar semiconducting polymers, characterized by both high electron (μ{sub e}) and hole (μ{sub h}) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μ{sub h} = 0.29 cm{sup 2}/V s and μ{sub e} = 0.001 cm{sup 2}/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μ{sub e} = 0.12 cm{sup 2}/V s and μ{sub h} = 8 × 10{sup −4} cm{sup 2}/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  3. Pectin and charge modified pectin hydrogel beads as a colon-targeted drug delivery carrier.

    Science.gov (United States)

    Jung, Jiyoung; Arnold, Robert D; Wicker, Louise

    2013-04-01

    The physical and chemical properties of commercial low methoxyl citrus pectins, CP 28 and CP 55, and a pectinmethylesterase (PME) charge modified citrus pectin (MP 38) were compared, and the differences in ability to encapsulate indomethacin in hydrogel beads was determined at 0.5 or 1.0% (w/v) indomethacin ratio, and 100, 200 or 300 mM CaCl(2) solution. In order to investigate the drug release characteristics, indomethacin loaded dried hydrogel beads were immersed in simulated gastric fluids (pH 1.2) for 2h, followed by immersing in simulated intestinal fluids (pH 7.4) for 3h. Pectin type was highly significant (ppectin hydrogel bead was less than 15% in simulated gastro-intestinal fluids. MP 38 beads showed significantly higher entrapment efficiency and lower release rate than beads formed from CP 28 or CP 55. MP 38 hydrogel formulated with 300 mM CaCl(2) and 0.5% indomethacin ratio showed the highest entrapment efficiency. These studies suggest that charge modification of pectin improves encapsulation efficiency of drugs for colon targeted drug delivery system through oral administration.

  4. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  5. Interplay Between Side Chain Pattern, Polymer Aggregation, and Charge Carrier Dynamics in PBDTTPD:PCBM Bulk-Heterojunction Solar Cells

    KAUST Repository

    Dyer-Smith, Clare

    2015-05-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene–alt–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors with linear side-chains yield bulk-heterojunction (BHJ) solar cell power conversion efficiencies (PCEs) of about 4% with phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, while a PBDTTPD polymer with a combination of branched and linear substituents yields a doubling of the PCE to 8%. Using transient optical spectroscopy it is shown that while the exciton dissociation and ultrafast charge generation steps are not strongly affected by the side chain modifications, the polymer with branched side chains exhibits a decreased rate of nongeminate recombination and a lower fraction of sub-nanosecond geminate recombination. In turn the yield of long-lived charge carriers increases, resulting in a 33% increase in short circuit current (J sc). In parallel, the two polymers show distinct grazing incidence X-ray scattering spectra indicative of the presence of stacks with different orientation patterns in optimized thin-film BHJ devices. Independent of the packing pattern the spectroscopic data also reveals the existence of polymer aggregates in the pristine polymer films as well as in both blends which trap excitons and hinder their dissociation.

  6. Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

    Science.gov (United States)

    Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

    2016-02-01

    Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD.

  7. Characterization of the charge-carrier transport properties of IIa-Tech SC diamond for radiation detection applications

    International Nuclear Information System (INIS)

    Single crystal (SC) diamond has since years demonstrated its interest for the fabrication of radiation detectors, especially where the material properties are providing superior interests with respect to the detection application. Among the industrial suppliers able to provide on a commercial basis high-grade single crystal diamond, IIa-Tech has recently appeared in the market as a new player. The aim of this paper is to assess the quality of one SC sample when characterized under α-particles for the measurement of its carrier transport properties. We observed that full charge collection could be observed at biases as low as 0.11 V/μm with no space charge build-up (conventionally typical bias values used are closer to 1 V/μm). Velocity reached values of 38 μm/ns and 53 μm/ns for electrons and holes, respectively (values probed at 0.33 V/μm). Similarly, the α detection spectrum displays a sharp line demonstrating the good uniformity of the material over its surface. By combining the measurements with more conventional optical observations such as birefringence and cathodoluminescence spectroscopy, it comes that the material demonstrates its ability to be used as a detector, with properties that can compare with the highest grade materials today available on the market. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Extreme Contrast Ratio Imaging of Sirius with a Charge Injection Device

    CERN Document Server

    Batcheldor, D; Bahr, C; Jenne, J; Ninkov, Z; Bhaskaran, S; Chapman, T

    2015-01-01

    The next fundamental steps forward in understanding our place in the universe could be a result of advances in extreme contrast ratio (ECR) imaging and point spread function (PSF) suppression. For example, blinded by quasar light we have yet to fully understand the processes of galaxy formation and evolution, and there is an ongoing race to obtain a direct image of an exoearth lost in the glare of its host star. To fully explore the features of these systems we must perform observations in which contrast ratios of at least one billion can be regularly achieved with sub 0.1" inner working angles. Here we present the details of a latest generation 32-bit charge injection device (CID) that could conceivably achieve contrast ratios on the order of one billion. We also demonstrate some of its ECR imaging abilities for astronomical imaging. At a separation of two arc minutes, we report a direct contrast ratio of Delta(m_v)=18.3, log(CR)=7.3, or 1 part in 20 million, from observations of the Sirius field. The atmosp...

  9. Effect of Fluorine Substitution on the Charge Carrier Dynamics of Benzothiadiazole-Based Solar Cell Materials.

    Science.gov (United States)

    Kim, In-Sik; Kim, In-Bok; Kim, Dong-Yu; Kwon, Seong-Hoon; Ko, Do-Kyeong

    2016-08-01

    The femtosecond transient absorption (TA) characterization of a new benzothiadiazole (BT)-based donor-acceptor conjugated copolymer, poly[(2,6-dithieno[3,2-b:2',3'-d]thiophene)-alt-(4,7-di(4-octyldodecylthiopen-2-yl)-2,1,3-benzo[c][1,2,5]thiadiazole (PBT), as well as its fluorinated derivatives, PFBT and PDFBT, is carried out. Additionally, bulk heterojunction (BHJ) films consisting of the copolymers and [6,6]-phenyl-C71 -butylic acid methyl ester (PC70 BM) are examined using TA spectroscopy. Both the singlet excited state dynamics in the copolymers and the charge transfer state dynamics in the BHJs are investigated in terms of fluorination dependency; the fluorinated copolymers exhibit less singlet exciton recombination rate than the fluorine-free copolymer, and the BHJs including the fluorinated copolymers display slower monomolecular recombination than the fluorine-free analogue. Furthermore, the excitation-intensity-dependent TA dynamics of the copolymers and BHJs is investigated, revealing that, when sufficiently high excitation intensity is used to induce annihilation processes, the fluorinated copolymers and BHJs incorporating the fluorinated copolymers show more rapid TA decay ascribable to morphological enhancement. These TA spectroscopic findings are found to correlate with the device characteristics with respect to fluorinated content in the polymer solar cells. In particular, both the short-circuit current density and fill factor of BHJ solar cells correspond closely with the fast decay parameters of the BHJ films under high excitation intensity. PMID:27226245

  10. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan

    2013-08-12

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  11. Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Junhui; Thomson, Douglas J; Freund, Michael S [Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB (Canada); Pilapil, Matt; Pillai, Rajesh G; Aminur Rahman, G M, E-mail: thomson@ee.umanitoba.ca, E-mail: michael_freund@umanitoba.ca [Department of Chemistry, University of Manitoba, Winnipeg, MB (Canada)

    2010-04-02

    Dynamic resistive memory devices based on a conjugated polymer composite (PPy{sup 0}DBS{sup -}Li{sup +} (PPy: polypyrrole; DBS{sup -}: dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

  12. Ultrasonic coupling to optically generated charge carriers in CdS: Physical phenomena and applications. Ph.D. Thesis - Washington Univ., Saint Louis, Mo.

    Science.gov (United States)

    Heyman, J. S.

    1975-01-01

    Phonon-charge carrier interactions are studied as well as ultrasonic resonators. Sensitivity enhancement factors predicted by one dimensional resonator theory are verified and several sensitive ultrasonic experimental techniques are developed. Measurements are reported of an anomalous sign reversal of the acoustoelectric voltage in a CdS resonator. Applications of CdS as an ultrasonic power detector are described.

  13. Efficiency of extrinsic and intrinsic charge-carrier photogeneration processes obtained from the steady-state photocurrent action spectra of poly( p-phenylene vinylene) derivatives

    Science.gov (United States)

    Cazati, T.; Santos, L. F.; Reis, F. T.; Faria, R. M.

    2012-09-01

    The efficiency of the charge-carrier photogeneration processes in poly(2,5-bis(3',7'-dimethyl-octyloxy)-1,4-phenylene vinylene) (OC1OC10-PPV) has been analyzed by the spectral response of the photocurrent of devices in ITO/polymer/Al structures. The symbatic response of the photocurrent action spectra of the OC1OC10-PPV devices, obtained for light-excitation through the ITO electrode and for forward bias, has been fitted using a phenomenological model which considers that the predominant transport mechanism under external applied electric field is the drift of photogenerated charge-carriers, neglecting charge-carrier diffusion. The proposed model takes into account that charge-carrier photogeneration occurs via intermediate stages of bounded pairs (excitonic states), followed by dissociation processes. Such processes result in two different contributions to the photoconductivity: The first one, associated to direct creation of unbound polaron pairs due to intrinsic photoionization; and the second one is associated to secondary processes like extrinsic photoinjection at the metallic electrodes. The results obtained from the model have shown that the intrinsic component of the photoconductivity at higher excitation energies has a considerably higher efficiency than the extrinsic one, suggesting a dependence on the photon energy for the efficiency of the photogeneration process.

  14. Charge carrier transport mechanisms in perovskite CdTiO3 fibers

    Directory of Open Access Journals (Sweden)

    Z. Imran

    2014-06-01

    Full Text Available Electrical transport properties of electrospun cadmium titanate (CdTiO3 fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC with traps at higher voltages at all temperatures (200 K – 420 K. Trap density in our fibers system is Nt = 6.27 × 1017 /cm3. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH from 200 K – 300 K. The localized density of states were found to be N(EF = 5.51 × 1021 eV−1 cm−3 at 2 V. Other VRH parameters such as hopping distance (Rhop and hopping energy (Whop were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO3 fibers efficient material for capacitive energy storage devices.

  15. Quadrimolecular recombination kinetics of photogenerated charge carriers in the composites of regioregular polythiophene derivatives and soluble fullerene

    Science.gov (United States)

    Tanaka, Hisaaki; Yokoi, Yuki; Hasegawa, Naoki; Kuroda, Shin-ichi; Iijima, Takayuki; Sato, Takao; Yamamoto, Takakazu

    2010-04-01

    Light-induced electron spin resonance (LESR) measurements have been performed on the composites of regioregular polythiophene derivatives and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) in order to study the recombination kinetics of photogenerated charge carriers. We adopt two regioregular polymers with different side chains; head-to-tail poly(3-hexylthiophene) (RR-P3HT) and head-to-head poly(3-dodecynylthiophene-2,5-diyl) [HH-P3(C≡CDec)Th]. In both systems, two LESR signals due to positive polarons on the polymer (g ˜2.002) and fullerene radical anions (g ˜2.000) have been observed. Quadrimolecular recombination (QR) kinetics, previously reported for RR-P3HT/C60 composites, where two positive polarons and two radical anions recombine simultaneously, has been confirmed in both systems by the observation of Iex0.25 dependence of the LESR intensity on the excitation light intensity (Iex) and the decay curve of the LESR intensity. This process implies the formation of doubly-charged states such as bipolarons or polaron pairs on the polymer to attract two radical anions. Temperature dependence of the QR rate constant, γ, in both systems has exhibited a crossover of the transport mechanism from low temperature tunneling to high temperature hopping process, as in the case of RR-P3HT/C60 composites. In the RR-P3HT/PCBM composites, γ has exhibited marked dependencies on the PCBM concentration or annealing, which may be related to the change of the crystallinity of the phase-separated polymer and fullerene domains as well as their interface structures, affecting the carrier mobilities or the trap states at the interface. Associated change of the molecular orientation of RR-P3HT crystalline domains with the lamellar structure has been further confirmed from the anisotropic LESR signals of the cast films on the substrates, exhibiting a qualitative agreement with the reported x-ray or optical analyses. In the HH-P3(C≡CDec)Th/PCBM composite, γ has been smaller

  16. Injection currents in thin disordered organic films

    International Nuclear Information System (INIS)

    Analytic model of barrier-limited injection of charge carriers from metal electrodes into organic film, which was introduced by Arkhipov and co-workers, is modified, considering effects of multiple image charges and injection from both electrodes. Limits of applicability of Arkhipov's model are discussed. Variations from Arkhipov's model are important, if film thickness is comparable with Onsager length

  17. Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    Han, S.S.

    1993-09-01

    Ion-induced conductivity has been used to investigate the detector characteristics of diamond detectors. Both integrated-charge, and time-resolved current measurements were performed to examine the mean carrier transport properties of diamond and the dynamics of charge collection under highly-localized and high-density excitation conditions. The integrated-charge measurements were conducted with a standard pulse-counting system with {sup 241}Am radioactivity as the excitation source for the detectors. The time-resolved current measurements were performed using a 70 GHz random sampling oscilloscope with the detectors incorporated into high-speed microstrip transmission lines and the excitation source for these measurements was an ion beam of either 5-MeV He{sup +} or 10-MeV Si{sup 3+}. The detectors used in both experiments can be described as metal-semiconductor-metal (MSM) devices where a volume of the detector material is sandwiched between two metal plates. A charge collection model was developed to interpret the integrated-charge measurements which enabled estimation of the energy required to produce an electron-hole pair ({epsilon}{sub di}) and the mean carrier transport properties in diamond, such as carrier mobility and lifetime, and the behavior of the electrical contacts to diamond.

  18. Spatial Separation of Charge Carriers in In2O3-x(OH)y Nanocrystal Superstructures for Enhanced Gas-Phase Photocatalytic Activity.

    Science.gov (United States)

    He, Le; Wood, Thomas E; Wu, Bo; Dong, Yuchan; Hoch, Laura B; Reyes, Laura M; Wang, Di; Kübel, Christian; Qian, Chenxi; Jia, Jia; Liao, Kristine; O'Brien, Paul G; Sandhel, Amit; Loh, Joel Y Y; Szymanski, Paul; Kherani, Nazir P; Sum, Tze Chien; Mims, Charles A; Ozin, Geoffrey A

    2016-05-24

    The development of strategies for increasing the lifetime of photoexcited charge carriers in nanostructured metal oxide semiconductors is important for enhancing their photocatalytic activity. Intensive efforts have been made in tailoring the properties of the nanostructured photocatalysts through different ways, mainly including band-structure engineering, doping, catalyst-support interaction, and loading cocatalysts. In liquid-phase photocatalytic dye degradation and water splitting, it was recently found that nanocrystal superstructure based semiconductors exhibited improved spatial separation of photoexcited charge carriers and enhanced photocatalytic performance. Nevertheless, it remains unknown whether this strategy is applicable in gas-phase photocatalysis. Using porous indium oxide nanorods in catalyzing the reverse water-gas shift reaction as a model system, we demonstrate here that assembling semiconductor nanocrystals into superstructures can also promote gas-phase photocatalytic processes. Transient absorption studies prove that the improved activity is a result of prolonged photoexcited charge carrier lifetimes due to the charge transfer within the nanocrystal network comprising the nanorods. Our study reveals that the spatial charge separation within the nanocrystal networks could also benefit gas-phase photocatalysis and sheds light on the design principles of efficient nanocrystal superstructure based photocatalysts. PMID:27159793

  19. Extreme Contrast Ratio Imaging of Sirius with a Charge Injection Device

    Science.gov (United States)

    Batcheldor, D.; Foadi, R.; Bahr, C.; Jenne, J.; Ninkov, Z.; Bhaskaran, S.; Chapman, T.

    2016-02-01

    The next fundamental steps forward in understanding our place in the universe could be a result of advances in extreme contrast ratio (ECR) imaging and point-spread function (PSF) suppression. For example, blinded by quasar light we have yet to fully understand the processes of galaxy and star formation and evolution, and there is an ongoing race to obtain a direct image of an exo-Earth lost in the glare of its host star. To fully explore the features of these systems, we must perform observations in which contrast ratios (CRs) of at least one billion can be regularly achieved with sub 0.″1 inner working angles. Here, we present the details of a latest-generation 32-bit charge injection device (CID) that could conceivably achieve CRs on the order of one billion. We also demonstrate some of its ECR imaging abilities for astronomical imaging. At a separation of two arcminutes, we report a direct CR of {{Δ }}{m}v=18.3,{log}({CR})=7.3, or 1 part in 20 million, from observations of the Sirius field. The atmospheric conditions present during the collection of this data prevented less modest results, and we expect to be able to achieve higher CRs, with improved inner working angles, simply by operating a CID at a world-class observing site. However, CIDs do not directly provide any PSF suppression. Therefore, combining CID imaging with a simple PSF suppression technique like angular differential imaging could provide a cheap and easy alternative to the complex ECR techniques currently being employed.

  20. An experimental technique for the study of non-avalanche charge injection or trapping in MIS structures

    Science.gov (United States)

    Kolk, J.; Heasell, E.

    1980-03-01

    In the study of charge injection in the insulator-silicon system, variation of the electric field in the insulator, caused by charge trapping during a measurement, makes the interpretation and analysis of experimental data difficult. A measuring system and test device structure are described in which it is possible to monitor any change of the device threshold voltage and to adjust the applied gate voltage so as to maintain a constant electric field at the insulator-silicon interface. Experimental results will be presented which show the advantages stemming from this mode of operation.

  1. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  2. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Science.gov (United States)

    Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2014-08-01

    The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  3. Flexible charge balanced stimulator with 5.6 fC accuracy for 140 nC injections.

    Science.gov (United States)

    Nag, Sudip; Jia, Xiaofeng; Thakor, Nitish V; Sharma, Dinesh

    2013-06-01

    Electrical stimulations of neuronal structures must ensure net injected charges to be zero for biological safety and voltage compliance reasons. We present a novel architecture of general purpose biphasic constant current stimulator that exhibits less than 5.6 fC error while injecting 140 nC charges using 1.4 mA currents. The floating current sources and conveyor switch based system can operate in monopolar or bipolar modes. Anodic-first or cathodic-first pulses with optional inter-phase delays have been demonstrated with zero quiescent current requirements at the analog front-end. The architecture eliminates blocking capacitors, electrode shorting and complex feedbacks. Bench-top and in-vivo measurement results have been presented with emulated electrode impedances (resistor-capacitor network), Ag-AgCl electrodes in saline and in-vivo (acute) peripheral nerve stimulations in anesthetized rats. PMID:23853326

  4. Concentration and mobility of charge carriers in thin polymers at high temperature determined by electrode polarization modeling

    Science.gov (United States)

    Diaham, Sombel; Locatelli, Marie-Laure

    2012-07-01

    Charge carrier concentration (n0) and effective mobility (μeff) are reported in two polymer films (dielectric spectroscopy data. It is shown that the glass transition temperature (Tg) occurrence has a strong influence on the temperature dependence of n0 and μeff. We carry out that n0 presents two distinct Arrhenius-like behaviors below and above Tg, while μeff exhibits a Vogel-Fulcher-Tamman behavior only above Tg whatever the polymer under study. For polyimide films, n0 varies from 1 × 1014 to 4 × 1016 cm-3 and μeff from 1 × 10-8 to 2 × 10-6 cm2 V-1 s-1 between 200 °C to 400 °C. Poly(amide-imide) films show n0 values between 6 × 1016 and 4 × 1018 cm-3 from 270 °C to 400 °C, while μeff varies between 1 × 10-10 and 2 × 10-7 cm2 V-1 s-1. Considering the activation energies of these physical parameters in the temperature range of investigation, n0 and μeff values appear as coherent with those reported in the literature at lower temperature (Polyimide films appear as good candidates due to nS values less than 1011 cm-2 up to 300 °C.

  5. Charge carriers and small-polaron migration as the origin of intrinsic dielectric anomalies in multiferroic TbMnO3 polycrystals.

    Science.gov (United States)

    Silveira, L G D; Dias, G S; Cótica, L F; Eiras, J A; Garcia, D; Sampaio, J A; Yokaichiya, F; Santos, I A

    2013-11-27

    Temperature-dependent and frequency-dependent dielectric investigations have been performed in TbMnO3 polycrystals sintered in either oxidative or reductive atmospheres. The results revealed the occurrence of two dielectric anomalies above 100 K, which are caused by the thermal activation of charge carriers and their motion in grain cores and grain boundaries. The temperature dependence of the bulk dc conductivity was also analysed and indicates that charge carriers move between inequivalent sites according to a variable-range-hopping mechanism. Also, a strong correlation between dielectric properties and crystalline structure was observed. Furthermore, a low-temperature dielectric relaxation, commonly reported in rare-earth manganite crystals, was observed in both samples. This relaxation follows the empirical Cole-Cole model and was attributed to small-polaron tunnelling. Polaron motion was observed to be affected by the magnetic transitions, structural properties and intrinsic anisotropies in TbMnO3. It is also worth mentioning that the dielectric anomaly due to motion of charge carriers in grain boundaries is the only one of extrinsic origin, while the anomalies related to carrier motion in grain cores and small-polaron tunnelling are intrinsic to TbMnO3.

  6. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  7. Fault injection as a test method for an FPGA in charge of data readout for a large tracking detector

    CERN Document Server

    Roed, K; Richter, M; Fehlker, D; Helstrup, H; Alme, J; Ullaland, K

    2011-01-01

    This paper describes how fault injection has been implemented as a test method for an FPGA in an existing hardware configuration setup. As this FPGA is in charge of data readout for a large tracking detector, the reliability of this FPGA is of high importance. Due to the complexity of the readout electronics, irradiation testing is technically difficult at this stage of the system commissioning. The work presented in this paper is therefore motivated by introducing fault injection as an alternative method to characterize failures caused by SEUs. It is a method to study the effect that a configuration upset may have on the operation of the FPGA. The target platform consists of two independent modules for data acquisition and detector control functionality. Fault injection to test the response of the data acquisition module is made possible by implementing the solution as part of the detector control functionality. Correct implementation is validated by a simple shift register design. Our results demonstrate th...

  8. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

    Energy Technology Data Exchange (ETDEWEB)

    Chava, Venkata S. N., E-mail: vchava@email.sc.edu; Omar, Sabih U.; Brown, Gabriel; Shetu, Shamaita S.; Andrews, J.; Sudarshan, T. S.; Chandrashekhar, M. V. S. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States)

    2016-01-25

    In this letter, we report the UV detection characteristics of an epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistor (SEPT) with EG on top as the transparent Schottky emitter layer. Under 0.43 μW UV illumination, the device showed a maximum common emitter current gain of 113, when operated in the Schottky emitter mode. We argue that avalanche gain and photoconductive gain can be excluded, indicating minority carrier injection efficiency, γ, as high as 99% at the EG/p-SiC Schottky junction. This high γ is attributed to the large, highly asymmetric barrier, which EG forms with the p-SiC. The maximum responsivity of the UV phototransistor is estimated to be 7.1 A/W. The observed decrease in gain with increase in UV power is attributed to recombination in the base region, which reduces the minority carrier lifetime.

  9. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, Ryan W. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Callahan, Rebecca [National Renewable Energy Lab. (NREL), Golden, CO (United States); Reid, Obadiah G. [Univ. of Colorado, Boulder, CO (United States); Dolzhnikov, Dmitriy S. [Univ. of Chicago, IL (United States); Talapin, Dmitri V. [Univ. of Chicago, IL (United States); Rumbles, Garry [National Renewable Energy Lab. (NREL), Golden, CO (United States); Luther, Joseph M. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Kopidakis, Nikos [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  10. Ultrafast terahertz probe of photoexcited free charge carriers in organometal CH3NH3PbI3 perovskite thin film

    Science.gov (United States)

    Yan, Huijie; An, Baoli; Fan, Zhengfu; Zhu, Xiaoya; Lin, Xian; Jin, Zuanming; Ma, Guohong

    2016-04-01

    By using optical pump-terahertz probe (OPTP) experiments, we study the free charge carrier dynamics in photoexcited drop-cast CH3NH3PbI3-based perovskite thin film at room temperature. Compared with the pump photon energy at 1.55 eV, the measured OPTP signal following excitation of 3.1 eV shows an additional fast decay channel of the photoconductivity. Our experimental results demonstrate that effective carrier lifetime can be strongly modulated by surface recombination. In addition, the Drude-Smith-like transient terahertz photoconductivity spectra suggest that photogenerated free carriers experience backscattering at grain boundaries in our solution-processed perovskite films studied here.

  11. Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

    2015-10-15

    The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

  12. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds: implications for the DIB carrier

    Science.gov (United States)

    Cox, N. L. J.; Spaans, M.

    2006-06-01

    Context.The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims.In order to reveal the identity of the DIB carrier we investigate the effects of metallicity, radiation field and extinction curve on the PAH charge state distribution, and thus the theoretical emergent PAH spectrum, in diffuse interstellar clouds. This behaviour can then be linked to that of the DIB carrier, thus giving insight into its identity. Methods.We use radiative transfer and chemical models to compute the physical and chemical conditions in diffuse clouds with Galactic and Magellanic Cloud types of interstellar dust and gas. Subsequently, the PAH charge state distributions throughout these clouds are determined. Results.We find that the fraction of PAH cations is much higher in the Magellanic Cloud environments than in the Milky Way, caused predominantly by the respective lower metallicities, and mitigated by the steeper UV extinction curve. The fraction of anions is much lower in a low metallicity environment. The predicted DIB strength of cationic PAH carriers is similar to that of the Milk Way for the LMC and 40% for the SMC due to the overall metallicity. Stronger DIBs could be expected in the Magellanic Clouds if they emanate from clouds that are exposed to an average interstellar radiation field that is significantly stronger than in the Milky Way, although photo-destruction processes could possibly reduce this effect, especially for the smaller PAHs. Our results show that the presence and absence of DIB carriers in the Magellanic Cloud lines of sight can be tied to the PAH charge balance which is driven by metallicity, UV radiation and dust extinction effects.

  13. Effects of Molecular Structure on Intramolecular Charge Carrier Transport in Dithieno [3,2-b: 2,3-d] Pyrrole-Based Conjugated Copolymers

    Directory of Open Access Journals (Sweden)

    Yoshihito Honsho

    2012-01-01

    Full Text Available Intramolecular mobility of positive charge carriers in conjugated polymer films based on dithieno [2,3-b: 2,3-d] pyrrole (DTP is studied by time-resolved microwave conductivity (TRMC. A series of DTP homopolymer and copolymers combined with phenyl, 2,2-biphenyl, thiophene, 2,2-bithiophene, and 9,9-dioctylfluorene were synthesized by Suzuki-Miyaura and Yamamoto coupling reactions. Polymers containing DTP unit are reported to show high value of hole mobility measured by FET method, and this type of polymers is expected to have stable HOMO orbitals which are important for hole transportation. Among these copolymers, DTP coupled with 9,9-dioctylfluorene copolymer showed the highest charge carrier mobility as high as 1.7 cm2/Vs, demonstrating an excellent electrical property on rigid copolymer backbones.

  14. Improving charge injection in high-mobility rubrene crystals: From contact-limited to channel-dominated transistors

    Science.gov (United States)

    Zimmerling, Tino; Batlogg, Bertram

    2014-04-01

    With progressively improving charge carrier mobility in organic semiconductors and miniaturization of organic field-effect transistors (OFETs), low contact resistances become ever more important. To study the capabilities of metal electrodes in OFETs and to explore the transition from contact-limited to channel-dominated transistor operation, we used flip-crystal FETs with gold electrodes having different contact resistances Rc to high-quality rubrene crystals. 4-terminal transfer and output measurements reveal that Rc decreases from 105-106 Ω cm for 15 min air exposure to 3 × 103 Ωcm for at least 5 h air exposure of the gold electrodes before the flip-crystal FET is assembled. We conclude the reduction of Rc to be caused by a growing contamination layer on the gold electrodes that weakens the electrostatic coupling between rubrene crystal and gold electrode, and lowers the Schottky contact diode parameter V0. In channel-dominated (low Rc) FETs, the mobility is in the range of 10-17 cm2/(Vs); in contrast, in contact-limited (high Rc) FETs, the apparent mobility decreases significantly with increasing contact resistance. The apparent μ - Rc dependence is not intrinsic, but rather the result of incorrect assumptions of the potential and the charge carrier density in the channel region. Thus, the development of high-mobility organic semiconductors requires further efforts to improve contacts beyond traditional metal electrodes.

  15. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Yokoyama, Masaaki [Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  16. Kerr electro-optic field mapping study of the effect of charge injection on the impulse breakdown strength of transformer oil

    Science.gov (United States)

    Zhang, X.; Zahn, M.

    2013-10-01

    The smart use of charge injection to improve breakdown strength in transformer oil is demonstrated in this paper. Hypothetically, bipolar homo-charge injection with reduced electric field at both electrodes may allow higher voltage operation without insulation failure, since electrical breakdown usually initiates at the electrode-dielectric interfaces. To find experimental evidence, the applicability and limitation of the hypothesis is first analyzed. Impulse breakdown tests and Kerr electro-optic field mapping measurements are then conducted with different combinations of parallel-plate aluminum and brass electrodes stressed by millisecond duration impulse. It is found that the breakdown voltage of brass anode and aluminum cathode is ˜50% higher than that of aluminum anode and brass cathode. This can be explained by charge injection patterns from Kerr measurements under a lower voltage, where aluminum and brass electrodes inject negative and positive charges, respectively. This work provides a feasible approach to investigating the effect of electrode material on breakdown strength.

  17. Photoinduced charge injection from excited triplet hypocrellin B into TiO2 colloid in ethanol

    Institute of Scientific and Technical Information of China (English)

    SHEN, Jian-Quan; SHEN, Tao; ZHANG, Man-Hua; LI, Wen; SONG, Ai-Min

    2000-01-01

    Photosensitization of TiO2 colloid by hypocrellin B (HB), a natural photodynamic pigment with extremely high plhotosta bility, has been studied by surface enhanced Raman spec troscorpy (SERS), laser flash photolysis and electron param agnetic resonance (EPR) techniques. The photosensitization of TiO2 occurred practically from the excited triplet dye and the electron injection rate constant is 1.3 × 106 s-1. The influ ences of donor and acceptor on the eleciron injection were in vestigated.

  18. Influence of carriers injection conditions on current-voltage characteristic of InGaAs/InAlAs-based three-terminal ballistic junctions

    Science.gov (United States)

    Farhi, G.; Hackens, B.; Faniel, S.; Gustin, C.; Bayot, V.; Wallart, X.; Bollaert, S.; Cappy, A.; Vasallo, B. G.; Mateos, J.; Gonzalez, T.

    2004-03-01

    We report on nonlinear electrical properties of three-terminal ballistic junctions (TBJs), etched on a two-dimensional electron gas confined in an InGaAs/InAlAs heterostructure. Measurements are performed in the six-probe configuration between 4.2K and room temperature. We measure the voltage Vc generated at the central stem when voltages Vl and Vr are applied on the left and right branches of the TBJs in push-pull fashion (Vl = -Vr =V_0). We observe that the sign and the amplitude of the nonlinear Vc vs V0 characteristic are strikingly influenced by voltage biases applied on side gates as well as by the carriers injection conditions at the left and right branches (injection angle, collimation). In particular, sign reversal is observed in some conditions. The experimental results are compared with predictions by Xu (H.Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)).

  19. Self-Healing Conductive Injectable Hydrogels with Antibacterial Activity as Cell Delivery Carrier for Cardiac Cell Therapy.

    Science.gov (United States)

    Dong, Ruonan; Zhao, Xin; Guo, Baolin; Ma, Peter X

    2016-07-13

    Cell therapy is a promising strategy to regenerate cardiac tissue for myocardial infarction. Injectable hydrogels with conductivity and self-healing ability are highly desirable as cell delivery vehicles for cardiac regeneration. Here, we developed self-healable conductive injectable hydrogels based on chitosan-graft-aniline tetramer (CS-AT) and dibenzaldehyde-terminated poly(ethylene glycol) (PEG-DA) as cell delivery vehicles for myocardial infarction. Self-healed electroactive hydrogels were obtained after mixing CS-AT and PEG-DA solutions at physiological conditions. Rapid self-healing behavior was investigated by rheometer. Swelling behavior, morphology, mechanical strength, electrochemistry, conductivity, adhesiveness to host tissue and antibacterial property of the injectable hydrogels were fully studied. Conductivity of the hydrogels is ∼10(-3) S·cm(-1), which is quite close to native cardiac tissue. Proliferation of C2C12 myoblasts in the hydrogel showed its good biocompatibility. After injection, viability of C2C12 cells in the hydrogels showed no significant difference with that before injection. Two different cell types were successfully encapsulated in the hydrogels by self-healing effect. Cell delivery profile of C2C12 myoblasts and H9c2 cardiac cells showed a tunable release rate, and in vivo cell retention in the conductive hydrogels was also studied. Subcutaneous injection and in vivo degradation of the hydrogels demonstrated their injectability and biodegradability. Together, these self-healing conductive biodegradable injectable hydrogels are excellent candidates as cell delivery vehicle for cardiac repair. PMID:27311127

  20. Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Dauffy, L S; Koch, J A

    2005-10-20

    This report investigates the use of x-rays and electrons to excite a CVD polycrystalline diamond detector during a double pulse experiment to levels corresponding to those expected during a successful (1D clean burn) and a typical failed ignition (2D fizzle) shot at the National Ignition Facility, NIF. The monitoring of a failed ignition shot is the main goal of the diagnostic, but nevertheless, the study of a successful ignition shot is also important. A first large neutron pulse is followed by a smaller pulse (a factor of 1000 smaller in intensity) after 50 to 300 ns. The charge carrier densities produced during a successful and failed ignition shot are about 10{sup 15} e-h+/cm{sup 3} and 2.6* 10{sup 12} e-h+/cm{sup 3} respectively, which is lower than the 10{sup 16} e-h+/cm{sup 3} needed to saturate the diamond wafer due to charge recombination. The charge carrier density and the signal induced in the diamond detector are calculated as a function of the incident x-ray and electron energy, flux, and detector dimensions. For available thicknesses of polycrystalline CVD diamond detectors (250 {micro}m to 1000 {micro}m), a flux of over 10{sup 11} x-rays/cm{sup 2} (with x-ray energies varying from 6 keV to about 10 keV) or 10{sup 9} {beta}/cm{sup 2} (corresponding to 400 pC per electron pulse, E{sub {beta}} > 800 keV) is necessary to excite the detector to sufficient levels to simulate a successful ignition's 14 MeV peak. Failed ignition levels would require lower fluxes, over 10{sup 8} x-rays/cm{sup 2} (6 to 10 keV) or 10{sup 6} {beta}/cm{sup 2} (1 pC per electron pulse, E{sub {beta}} > 800 keV). The incident pulse must be delivered on the detector surface in several nanoseconds. The second pulse requires fluxes down by a factor of 1000. Several possible x-ray beam facilities are investigated: (1) the LBNL Advanced Light Source, (2) the Stanford SLAC and SPEAR, (3) the BNL National Synchrotron Light Source, (4) the ANL Advanced Photon Source, (5) the LLNL Janus

  1. Universal approach for selective trace metal determinations via sequential injection-bead injection-lab-on-valve using renewable hydrophobic bead surfaces as reagent carriers

    DEFF Research Database (Denmark)

    Long, Xiangbao; Miró, Manuel; Hansen, Elo Harald

    2005-01-01

    A new concept is presented for selective and sensitive determination of trace metals via electrothermal atomic absorption spectrometry (ETAAS) based on the principle of bead injection (BI) with renewable reversed-phase surfaces in a sequential injection-lab-on-valve (SI-LOV) mode. The methodology...... involves the use of poly(styrene-divinylbenzene) beads containing pendant octadecyl moieties (C18-PS/DVB), which are preimpregnated with a selective organic metal chelating agent prior to the automatic manipulation of the beads in the microbore conduits of the LOV unit. By adapting this approach, the...... immobilization of the most suitable chelating agent can be effected irrespective of the kinetics involved, optimal reaction conditions can be used for implementing the chelating reaction of the target metal analyte with the immobilized reagent, and an added degree of freedom is offered in selecting the most...

  2. Performance and efficiency evaluation and heat release study of a direct-injection stratified-charge rotary engine

    Science.gov (United States)

    Nguyen, H. L.; Addy, H. E.; Bond, T. H.; Lee, C. M.; Chun, K. S.

    1987-01-01

    A computer simulation which models engine performance of the Direct Injection Stratified Charge (DISC) rotary engines was used to study the effect of variations in engine design and operating parameters on engine performance and efficiency of an Outboard Marine Corporation (OMC) experimental rotary combustion engine. Engine pressure data were used in a heat release analysis to study the effects of heat transfer, leakage, and crevice flows. Predicted engine data were compared with experimental test data over a range of engine speeds and loads. An examination of methods to improve the performance of the rotary engine using advanced heat engine concepts such as faster combustion, reduced leakage, and turbocharging is also presented.

  3. A strategy to minimize the energy offset in carrier injection from excited dyes to inorganic semiconductors for efficient dye-sensitized solar energy conversion.

    Science.gov (United States)

    Fujisawa, Jun-Ichi; Osawa, Ayumi; Hanaya, Minoru

    2016-08-10

    Photoinduced carrier injection from dyes to inorganic semiconductors is a crucial process in various dye-sensitized solar energy conversions such as photovoltaics and photocatalysis. It has been reported that an energy offset larger than 0.2-0.3 eV (threshold value) is required for efficient electron injection from excited dyes to metal-oxide semiconductors such as titanium dioxide (TiO2). Because the energy offset directly causes loss in the potential of injected electrons, it is a crucial issue to minimize the energy offset for efficient solar energy conversions. However, a fundamental understanding of the energy offset, especially the threshold value, has not been obtained yet. In this paper, we report the origin of the threshold value of the energy offset, solving the long-standing questions of why such a large energy offset is necessary for the electron injection and which factors govern the threshold value, and suggest a strategy to minimize the threshold value. The threshold value is determined by the sum of two reorganization energies in one-electron reduction of semiconductors and typically-used donor-acceptor (D-A) dyes. In fact, the estimated values (0.21-0.31 eV) for several D-A dyes are in good agreement with the threshold value, supporting our conclusion. In addition, our results reveal that the threshold value is possible to be reduced by enlarging the π-conjugated system of the acceptor moiety in dyes and enhancing its structural rigidity. Furthermore, we extend the analysis to hole injection from excited dyes to semiconductors. In this case, the threshold value is given by the sum of two reorganization energies in one-electron oxidation of semiconductors and D-A dyes.

  4. A strategy to minimize the energy offset in carrier injection from excited dyes to inorganic semiconductors for efficient dye-sensitized solar energy conversion.

    Science.gov (United States)

    Fujisawa, Jun-Ichi; Osawa, Ayumi; Hanaya, Minoru

    2016-08-10

    Photoinduced carrier injection from dyes to inorganic semiconductors is a crucial process in various dye-sensitized solar energy conversions such as photovoltaics and photocatalysis. It has been reported that an energy offset larger than 0.2-0.3 eV (threshold value) is required for efficient electron injection from excited dyes to metal-oxide semiconductors such as titanium dioxide (TiO2). Because the energy offset directly causes loss in the potential of injected electrons, it is a crucial issue to minimize the energy offset for efficient solar energy conversions. However, a fundamental understanding of the energy offset, especially the threshold value, has not been obtained yet. In this paper, we report the origin of the threshold value of the energy offset, solving the long-standing questions of why such a large energy offset is necessary for the electron injection and which factors govern the threshold value, and suggest a strategy to minimize the threshold value. The threshold value is determined by the sum of two reorganization energies in one-electron reduction of semiconductors and typically-used donor-acceptor (D-A) dyes. In fact, the estimated values (0.21-0.31 eV) for several D-A dyes are in good agreement with the threshold value, supporting our conclusion. In addition, our results reveal that the threshold value is possible to be reduced by enlarging the π-conjugated system of the acceptor moiety in dyes and enhancing its structural rigidity. Furthermore, we extend the analysis to hole injection from excited dyes to semiconductors. In this case, the threshold value is given by the sum of two reorganization energies in one-electron oxidation of semiconductors and D-A dyes. PMID:27452717

  5. Semi-Analytical Modeling and Analysis in Three Dimensions of the Optical Carrier Injection and Diffusion in a Semiconductor Substrate

    Science.gov (United States)

    Gary, René; Arnould, Jean-Daniel; Vilcot, Anne

    2006-05-01

    In order to be faster and more precise than any numerical technique for the computation of the photo-induced plasma in semiconductor, an analytical solution has to be developed. In this paper, the Hankel transform is used to simplify the solution of the differential equation of second order with nonconstant coefficient, known as the diffusion equation. The resulting expression of the three-dimensional (3-D) carrier density includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions.

  6. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and 125Te NMR measurements in complex tellurides

    Science.gov (United States)

    Levin, E. M.

    2016-06-01

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S , depends on the free (mobile) carrier concentration, n , and effective mass, m*, as S ˜m*/n2 /3 . The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1 /T1 , depends on both n and m* as 1 /T1˜(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1 /T1˜(m*)2n2 /3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study A gxS bxG e50-2xT e50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  7. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Science.gov (United States)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  8. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  9. Formulation, characterization, and evaluation of in vitro skin permeation and in vivo pharmacodynamics of surface-charged tripterine-loaded nanostructured lipid carriers

    Directory of Open Access Journals (Sweden)

    Chen Y

    2012-06-01

    Full Text Available Yan Chen, Lei Zhou, Ling Yuan, Zhen-hai Zhang, Xuan Liu, Qingqing WuKey Laboratory of New Drug Delivery System of Chinese Materia Medica, Jiangsu Provincial Academy of Chinese Medicine, Nanjing, Jiangsu, ChinaBackground: Nanostructured lipid carriers (NLCs are attractive materials for topical drug delivery, and in a previous study, we demonstrated that NLCs loaded with tripterine enhance its deposition. However, the surface charge of nanoparticles influences percutaneous drug penetration. Therefore, we aimed to evaluate the influence of the surface charge of NLCs on in vitro skin permeation and in vivo pharmacodynamics of tripterine and optimize tripterine-loaded NLCs for the treatment of skin diseases.Methods: Different solid and liquid matrices were selected to prepare cationic, anionic, and neutral NLCs by the solvent evaporation method. The in vitro studies were evaluated by using Franz diffusion cells. The effect of surface-charged NLCs on cellular uptake was appraised across HaCaT and B16BL6 cells. The in vitro and in vivo anticancer activity of surface-charged NLCs was evaluated in B16BL6 cells and melanoma-bearing mice, respectively.Results: The average particle sizes of the cationic, anionic, and neutral NLCs were 90.2 ± 9.7, 87.8 ± 7.4, and 84.5 ± 10.2 nm, respectively; their encapsulation efficiencies were 64.3% ± 5.1%, 67.8% ± 4.4%, and 72.5% ± 4.9%, respectively. In vitro studies showed delayed tripterine release, and the order of skin permeation was cationic NLCs > anionic NLCs > neutral NLCs. Further, in vitro cytotoxicity studies showed that the cationic NLCs had the highest (P < 0.05 inhibition ratio in B16BL6 (melanoma cells. Moreover, in vivo pharmacodynamic experiments in melanoma-bearing mice indicated that the cationic NLCs had significantly higher (P < 0.05 antimelanoma efficacy than the anionic and neutral NLCs.Conclusion: The surface charge of NLCs has a great influence on the skin permeation and pharmacodynamics

  10. Influences of Injection Barrier and Mobility on Recombination Rate and Zone in OLEDs

    Institute of Scientific and Technical Information of China (English)

    ZHU Ru-hui; LI Hong-jian; YAN Ling-ling; HU Jin; PAN Yan-zhi

    2006-01-01

    The luminous efficiency of organic light-emitting devices depends on the recombination probability of electrons injected at the cathode and holes at the anode. A theoretical model to calculate the distribution of current densities and the recombination rate in organic single layer devices is presented taking into account the charge injection process at each electrode, charge transport and recombination in organic layer. The calculated results indicate that efficient single-layer devices are possible by adjusting the barrier heights at two electrodes and the carrier mobilities. Lowering the barrier heights can improve the electroluminescent(EL) efficiency pronouncedly in many cases, and efficient devices are still possible using an ohmic contact to inject the low mobility carrier, and a contact limited contact to inject the high mobility carrier. All in all, high EL efficiency needs to consider sufficient recombination, enough injected carriers and well transport.

  11. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

    OpenAIRE

    Schoehe, S.; Hofmann, T.; Darakchieva, Vanya; X Wang; Yoshikawa, A.; Wang, K.; Araki, T; Nanishi, Y; Schubert, M

    2014-01-01

    Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\\times10^{17}$ cm$^{-3}$ to $8\\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\\times10^{18}$ cm$^{-3}$ to $9\\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasm...

  12. Heavy Inertial Confinement Energy: Interactions Involoving Low charge State Heavy Ion Injection Beams

    Energy Technology Data Exchange (ETDEWEB)

    DuBois, Robert D

    2006-04-14

    During the contract period, absolute cross sections for projectile ionization, and in some cases for target ionization, were measured for energetic (MeV/u) low-charge-state heavy ions interacting with gases typically found in high and ultra-high vacuum environments. This information is of interest to high-energy-density research projects as inelastic interactions with background gases can lead to serious detrimental effects when intense ion beams are accelerated to high energies, transported and possibly confined in storage rings. Thus this research impacts research and design parameters associated with projects such as the Heavy Ion Fusion Project, the High Current and Integrated Beam Experiments in the USA and the accelerator upgrade at GSI-Darmstadt, Germany. Via collaborative studies performed at GSI-Darmstadt, at the University of East Carolina, and Texas A&M University, absolute cross sections were measured for a series of collision systems using MeV/u heavy ions possessing most, or nearly all, of their bound electrons, e.g., 1.4 MeV/u Ar{sup +}, Xe{sup 3+}, and U{sup 4,6,10+}. Interactions involving such low-charge-state heavy ions at such high energies had never been previously explored. Using these, and data taken from the literature, an empirical model was developed for extrapolation to much higher energies. In order to extend our measurements to much higher energies, the gas target at the Experimental Storage Ring in GSI-Darmstadt was used. Cross sections were measured between 20 and 50 MeV/u for U{sup 28+}- H{sub 2} and - N{sub 2}, the primary components found in high and ultra-high vacuum systems. Storage lifetime measurements, information inversely proportional to the cross section, were performed up to 180 MeV/u. The lifetime and cross section data test various theoretical approaches used to calculate cross sections for many-electron systems. Various high energy density research projects directly benefit by this information. As a result, the general

  13. Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

    Institute of Scientific and Technical Information of China (English)

    Ken K. Chin

    2011-01-01

    For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated,that have multiple transition energy levels among charge states,the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density.A graphical method is used to illustrate the solution of the problem.Relations among the transition energy levels of the multi-level defect are derived using the graphical method.Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work.

  14. Beyond vibrationally mediated electron transfer: interfacial charge injection on a sub-10-fs time scale

    Science.gov (United States)

    Huber, Robert; Moser, Jacques E.; Gratzel, Michael; Wachtveitl, Josef L.

    2003-12-01

    The electron transfer (ET) from organic dye molecules to semiconductor-colloidal systems is characterized by a special energetic situation with a charge transfer reaction from a system of discrete donor levels to a continuum of acceptor states. If these systems show a strong electronic coupling they are amongst the fastest known ET systems with transfer times of less than 10 fs. In the first part a detailed discussion of the direct observation of an ET reaction with a time constant of about 6 fs will be given, with an accompanying argumentation concerning possible artifacts or other interfering signal contributions. In a second part we will try to give a simple picture for the scenario of such superfast ET reactions and one main focus will be the discussion of electronic dephasing and its consequences for the ET reaction. The actual ET process can be understood as a kind of dispersion process of the initially located electron into the colloid representing a real motion of charge density from the alizarin to the colloid.

  15. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Energy Technology Data Exchange (ETDEWEB)

    Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, LAPLACE, F-31062 Toulouse (France); Vu, T. T. N. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); Electric Power University, 235 Hoang Quoc Viet, 10000 Hanoi (Viet Nam)

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  16. Charge Transport in LDPE Nanocomposites Part II—Computational Approach

    Directory of Open Access Journals (Sweden)

    Anh T. Hoang

    2016-03-01

    Full Text Available A bipolar charge transport model is employed to investigate the remarkable reduction in dc conductivity of low-density polyethylene (LDPE based material filled with uncoated nanofillers (reported in the first part of this work. The effect of temperature on charge transport is considered and the model outcomes are compared with measured conduction currents. The simulations reveal that the contribution of charge carrier recombination to the total transport process becomes more significant at elevated temperatures. Among the effects caused by the presence of nanoparticles, a reduced charge injection at electrodes has been found as the most essential one. Possible mechanisms for charge injection at different temperatures are therefore discussed.

  17. Localization of the large-angle foil-scattering beam loss caused by the multiturn charge-exchange injection

    Science.gov (United States)

    Kato, Shinichi; Yamamoto, Kazami; Yoshimoto, Masahiro; Harada, Hiroyuki; Kinsho, Michikazu

    2013-07-01

    In the 3 GeV rapid cycling synchrotron of the Japan Proton Accelerator Research Complex, significant losses were observed at the branching of the H0 dump line and the beam position monitor that was inserted downstream of the H0 dump branch duct. These losses were caused by the large-angle scattering of the injection and circulating beams at the charge-exchange foil. To realize high-power operation, these losses must be mitigated. Therefore, a new collimation system was developed and installed in October 2011. To efficiently optimize this system, the behavior of particles scattered by the foil and produced by the absorber were simulated, and the optimal position and angle of the absorber were investigated. During this process, an angle regulation method for the absorber was devised. An outline of this system, the angle regulation method for the absorber, and the performance of this new collimation system are described.

  18. Charge-injection-device performance in the high-energy-neutron environment of laser-fusion experiments.

    Science.gov (United States)

    Marshall, F J; DeHaas, T; Glebov, V Yu

    2010-10-01

    Charge-injection devices (CIDs) are being used to image x rays in laser-fusion experiments on the University of Rochester's OMEGA Laser System. The CID cameras are routinely used up to the maximum neutron yields generated (∼10(14) DT). The detectors are deployed in x-ray pinhole cameras and Kirkpatrick-Baez microscopes. The neutron fluences ranged from ∼10(7) to ∼10(9) neutrons/cm(2) and useful x-ray images were obtained even at the highest fluences. It is intended to use CID cameras at the National Ignition Facility (NIF) as a supporting means of recording x-ray images. The results of this work predict that x-ray images should be obtainable on the NIF at yields up to ∼10(15), depending on distance and shielding.

  19. Charge-injection-device performance in the high-energy-neutron environment of laser-fusion experiments

    International Nuclear Information System (INIS)

    Charge-injection devices (CIDs) are being used to image x rays in laser-fusion experiments on the University of Rochester's OMEGA Laser System. The CID cameras are routinely used up to the maximum neutron yields generated (∼1014 DT). The detectors are deployed in x-ray pinhole cameras and Kirkpatrick-Baez microscopes. The neutron fluences ranged from ∼107 to ∼109 neutrons/cm2 and useful x-ray images were obtained even at the highest fluences. It is intended to use CID cameras at the National Ignition Facility (NIF) as a supporting means of recording x-ray images. The results of this work predict that x-ray images should be obtainable on the NIF at yields up to ∼1015, depending on distance and shielding.

  20. Detection of Negative Charge Carriers in Superfluid Helium Droplets: The Metastable Anions He*– and He2 *–

    OpenAIRE

    Mauracher, Andreas; Daxner, Matthias; Postler, Johannes; Huber, Stefan E.; Denifl, Stephan; Scheier, Paul; Toennies, J. Peter

    2014-01-01

    Helium droplets provide the possibility to study phenomena at the very low temperatures at which quantum mechanical effects are more pronounced and fewer quantum states have significant occupation probabilities. Understanding the migration of either positive or negative charges in liquid helium is essential to comprehend charge-induced processes in molecular systems embedded in helium droplets. Here, we report the resonant formation of excited metastable atomic and molecular helium anions in ...

  1. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    International Nuclear Information System (INIS)

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure

  2. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü., E-mail: uozgur@vcu.edu; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2015-05-04

    The effect of δ-doping of In{sub 0.06}Ga{sub 0.94}N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In{sub 0.15}Ga{sub 0.85}N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm{sup 2} in the reference LED to ∼120 A/cm{sup 2} in the LEDs with Mg δ-doped barriers.

  3. Role of Sub-Nanometer Dielectric Roughness on Microstructure and Charge Carrier Transport in α,ω-Dihexylsexithiophene Field-Effect Transistors.

    Science.gov (United States)

    Li, Mengmeng; Marszalek, Tomasz; Müllen, Klaus; Pisula, Wojciech

    2016-06-29

    The effect of dielectric roughness on the microstructure evolution of thermally evaporated α,ω-dihexylsexithiophene (α,ω-DH6T) thin films from a single molecular layer to tens of monolayers (ML) is studied. Thereby, the surface roughness of dielectrics is controlled within a sub-nanometer range. It is found that the grain size of an α,ω-DH6T ML is affected by dielectric roughness, especially for 1.5 ML, whereby the transistor performance is barely influenced. This can be attributed to a domain interconnection in the second layer over a long-range formed on the rough surface. With deposition of more layers, both microstructure and charge carrier transport exhibit a roughness-independent behavior. The structural characterization of α,ω-DH6T 10 ML by grazing-incidence wide-angle X-ray scattering reveals that the interlayer distance is slightly decreased from 3.30 to 3.15 nm due to a higher roughness, while an unchanged π-stacking distance is in excellent agreement with the roughness-independent hole mobility. This study excludes the influence of molecular-solvent interaction and preaggregation taking place during solution deposition, and provides further evidence that the microstructure of the interfacial layer of organic semiconductors has only minor impact on the bulk charge carrier transport in thicker films. PMID:27280702

  4. Role of Sub-Nanometer Dielectric Roughness on Microstructure and Charge Carrier Transport in α,ω-Dihexylsexithiophene Field-Effect Transistors.

    Science.gov (United States)

    Li, Mengmeng; Marszalek, Tomasz; Müllen, Klaus; Pisula, Wojciech

    2016-06-29

    The effect of dielectric roughness on the microstructure evolution of thermally evaporated α,ω-dihexylsexithiophene (α,ω-DH6T) thin films from a single molecular layer to tens of monolayers (ML) is studied. Thereby, the surface roughness of dielectrics is controlled within a sub-nanometer range. It is found that the grain size of an α,ω-DH6T ML is affected by dielectric roughness, especially for 1.5 ML, whereby the transistor performance is barely influenced. This can be attributed to a domain interconnection in the second layer over a long-range formed on the rough surface. With deposition of more layers, both microstructure and charge carrier transport exhibit a roughness-independent behavior. The structural characterization of α,ω-DH6T 10 ML by grazing-incidence wide-angle X-ray scattering reveals that the interlayer distance is slightly decreased from 3.30 to 3.15 nm due to a higher roughness, while an unchanged π-stacking distance is in excellent agreement with the roughness-independent hole mobility. This study excludes the influence of molecular-solvent interaction and preaggregation taking place during solution deposition, and provides further evidence that the microstructure of the interfacial layer of organic semiconductors has only minor impact on the bulk charge carrier transport in thicker films.

  5. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil;

    2016-01-01

    Broadband (1.6-18 THz) terahertz time-domain spectroscopy (THz-TDS) and time-resolved terahertz spectroscopy (TRTS) were performed on a 54 mu m thick chalcogenide glass (As30Se30Te40) sample with a two-color laser-induced air plasma THz system in transmission and reflection modes, respectively. Two...... induced THz Kerr effect, indicating that free carriers are responsible for the transient index change. (C) 2016 Chinese Laser Press...

  6. Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Grunwald, Torben

    2009-12-17

    This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

  7. Effects of disorder on spin injection and extraction for organic semiconductor spin-valves

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Sha, E-mail: shixx262@umn.edu; Liu, Feilong [University of Minnesota, Minneapolis, Minnesota 55455 (United States); Smith, Darryl L.; Ruden, P. Paul [University of Minnesota, Minneapolis, Minnesota 55455 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2015-02-28

    A device model for tunnel injection and extraction of spin-polarized charge carriers between ferromagnetic contacts and organic semiconductors with disordered molecular states is presented. Transition rates for tunneling are calculated based on a transfer Hamiltonian. Transport in the bulk semiconductor is described by macroscopic device equations. Tunneling predominantly involves organic molecular levels near the metal Fermi energy, and therefore typically in the tail of the band that supports carrier transport in the semiconductor. Disorder-induced broadening of the relevant band plays a critical role for the injection and extraction of charge carriers and for the resulting magneto-resistance of an organic semiconductor spin valve.

  8. Laser-induced forward transfer of polymer light-emitting diode pixels with increased charge injection.

    Science.gov (United States)

    Shaw-Stewart, James; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

    2011-02-01

    Laser-induced forward transfer (LIFT) has been used to print 0.6 mm × 0.5 mm polymer light-emitting diode (PLED) pixels with poly[2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) as the light-emitting polymer. The donor substrate used in the LIFT process is covered by a sacrificial triazene polymer (TP) release layer on top of which the aluminium cathode and functional MEH-PPV layers are deposited. To enhance electron injection into the MEH-PPV layer, a thin poly(ethylene oxide) (PEO) layer on the Al cathode or a blend of MEH-PPV and PEO was used. These donor substrates have been transferred onto both plain indium tin oxide (ITO) and bilayer ITO/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) blend) receiver substrates to create the PLED pixels. For comparison, devices were fabricated in a conventional manner on ITO substrates coated with a PEDOT:PSS hole-transporting layer. Compared to multilayer devices without PEO, devices with ITO/PEDOT:PSS/MEH-PPV:PEO blend/Al architecture show a 100 fold increase of luminous efficiency (LE) reaching a maximum of 0.45 cd/A for the blend at a brightness of 400 cd/m(2). A similar increase is obtained for the polymer light-emitting diode (PLED) pixels deposited by the LIFT process, although the maximum luminous efficiency only reaches 0.05 cd/A for MEH-PPV:PEO blend, which we have attributed to the fact that LIFT transfer was carried out in an ambient atmosphere. For all devices, we confirm a strong increase in device performance and stability when using a PEDOT:PSS film on the ITO anode. For PLEDs produced by LIFT, we show that a 25 nm thick PEDOT:PSS layer on the ITO receiver substrate considerably reduces the laser fluence required for pixel transfer from 250 mJ/cm(2) without the layer to only 80 mJ/cm(2) with the layer. PMID:21261274

  9. Photoinduced charge carriers in conjugated polymer–fullerene composites studied with light-induced electron-spin resonance

    NARCIS (Netherlands)

    Dyakonov, V.; Zoriniants, G.; Scharber, M.; Brabec, C.J.; Janssen, R.A.J.; Hummelen, J.C.; Sariciftci, N.S.

    1999-01-01

    Detailed studies on photoinduced spins in conjugated polymer/fullerene composites using (cw) light-induced electron-spin-resonance (LESR) technique are reported. Two overlapping LESR lines are observed, from positive polarons on the polymer chains and negative charges on the fullerene moieties. Micr

  10. Coupled optical absorption, charge carrier separation, and surface electrochemistry in surface disordered/hydrogenated TiO2 for enhanced PEC water splitting reaction.

    Science.gov (United States)

    Behara, Dilip Kumar; Ummireddi, Ashok Kumar; Aragonda, Vidyasagar; Gupta, Prashant Kumar; Pala, Raj Ganesh S; Sivakumar, Sri

    2016-03-28

    The central governing factors that influence the efficiency of photoelectrochemical (PEC) water splitting reaction are photon absorption, effective charge-carrier separation, and surface electrochemistry. Attempts to improve one of the three factors may debilitate other factors and we explore such issues in hydrogenated TiO2, wherein a significant increase in optical absorption has not resulted in a significant increase in PEC performance, which we attribute to the enhanced recombination rate due to the formation of amorphization/disorderness in the bulk during the hydrogenation process. To this end, we report a methodology to increase the charge-carrier separation with enhanced optical absorption of hydrogenated TiO2. Current methodology involves hydrogenation of non-metal (N and S) doped TiO2 which comprises (1) lowering of the band gap through shifting of the valence band via less electronegative non-metal N, S-doping, (2) lowering of the conduction band level and the band gap via formation of the Ti(3+) state and oxygen vacancies by hydrogenation, and (3) material processing to obtain a disordered surface structure which favors higher electrocatalytic (EC) activity. This design strategy yields enhanced PEC activity (%ABPE = 0.38) for the N-S co-doped TiO2 sample hydrogenated at 800 °C for 24 h over possible combinations of N-S co-doped TiO2 samples hydrogenated at 500 °C/24 h, 650 °C/24 h and 800 °C/72 h. This suggests that hydrogenation at lower temperatures does not result in much increase in optical absorption and prolonged hydrogenation results in an increase in optical absorption but a decrease in charge carrier separation by forming disorderness/oxygen vacancies in the bulk. Furthermore, the difference in double layer capacitance (C(dl)) calculated from electrochemical impedance spectroscopy (EIS) measurements of these samples reflects the change in the electrochemical surface area (ECSA) and facilitates assessing the key role of surface

  11. Charge injection properties of iridium oxide films produced on Ti-6Al-4V alloy substrates by ion-beam mixing techniques

    Energy Technology Data Exchange (ETDEWEB)

    Williams, J.M. (Oak Ridge National Lab., TN (United States)); Lee, I-S.; Buchanan, R.A. (Tennessee Univ., Knoxville, TN (United States))

    1991-10-01

    The charge injection capabilities of iridium oxide films, as produced on Ti6Al-4V alloy substrates by ion beam mixing techniques, have been investigated. Iridium oxide is a valence change oxide, and therefore has high values of charge injection density upon voltage cycling in electrolytes. Because of this property, iridium oxide films are useful as working elements in neural prostheses. Iridium films of three thicknesses, produced by sputter deposition followed by ion beam mixing, were tested in cyclic voltammetry out to 1000 cycles or more. Two surface preparations, mechanical polishing and an acid passivation treatment, were also used as controls. Surface analysis was primarily by Rutherford backscattering spectrometry. Both the ion- beam mixing and the acid pretreatment increased the lifetimes of films, in comparison with the mechanically polished standards. Reductions in charge injection capability, when they occurred, were attributed to loss of Ir from the films, and there was a close correlation between the charge injection density and the Ir inventory. 13 refs., 5 figs.

  12. [The role of carriers of intracellular fixed charges in the regulation of the resting potential of cells with ion pumps].

    Science.gov (United States)

    Glaser, R

    1976-01-01

    The living cell is considered as a nonideal phase, surrounded by an anion-permeable membrane in a stationary state. Ionic pumps maintain a nonequilibrium state for Na+ and K+. When assuming the water inside and outside the cell to be in thermodynamic equilibrium and the cell without wall not to resist the hydrostatic pressure difference, it is possible to calculate a membrane potential which strongly depends on the concentration of charged nonpenetrating molecules inside the cell. Living cells with a high resting potential should therefore contain a high inner charge density (nerve cells) or must be resistant to an inner hydrostatic pressure (plant cells). Cells in isotonic solutions with low ionic strength are not able to attain a stationary state. The regulations derived here are applied to the concrete conditions of human red cells.

  13. Assessment of Hot-Carrier Effects on Charge Separation in Type-II CdS/CdTe Heterostructured Nanorods.

    Science.gov (United States)

    Okano, Makoto; Sakamoto, Masanori; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

    2014-09-01

    Charge separation in semiconducting materials is an essential process that determines the efficiency of photovoltaic devices and photocatalysts. Herein, we report the charge-separation dynamics in type-II CdS/CdTe heterostructured nanorods revealed by femtosecond transient-absorption (TA) measurements with a broad-band white-light probe. Under selective excitation of the CdTe segment, bleaching signals at the band gap energy of CdS were clearly observed with a rise component on a subpicosecond time scale, which indicates efficient electron transfer from CdTe to CdS. The pump-energy dependence of the TA dynamics shows that hot electrons rapidly relax to the bottom of the conduction band of CdTe, and then the electrons transfer to the CdS segment. PMID:26278242

  14. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Qfix) and the effective lifetimes (τeff) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τeff than standard undoped layers. In contrast, B-doped layers exhibit lower τeff. A strong Qfix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  15. Evidence for high-energy and low-emittance electron beams using ionization injection of charge in a plasma wakefield accelerator

    CERN Document Server

    Vafaei-Najafabadi, N; Clayton, C E; Joshi, C; Marsh, K A; Mori, W B; Welch, E C; Lu, W; Adli, E; Allen, J; Clarke, C I; Corde, S; Frederico, J; Gessner, S J; Green, S Z; Hogan, M J; Litos, M D; Yakimenko, V

    2015-01-01

    Ionization injection in a plasma wakefield accelerator was investigated experimentally using two lithium plasma sources of different lengths. The ionization of the helium gas, used to confine the lithium, injects electrons in the wake. After acceleration, these injected electrons were observed as a distinct group from the drive beam on the energy spectrometer. They typically have a charge of tens of pC, an energy spread of a few GeV, and a maximum energy of up to 30 GeV. The emittance of this group of electrons can be many times smaller than the initial emittance of the drive beam. The energy scaling for the trapped charge from one plasma length to the other is consistent with the blowout theory of the plasma wakefield.

  16. Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors

    Science.gov (United States)

    Tsuji, Masaki; Arai, Norimichi; Marumoto, Kazuhiro; Takeya, Jun; Shimoi, Yukihiro; Tanaka, Hisaaki; Kuroda, Shin-ichi; Takenobu, Taishi; Iwasa, Yoshihiro

    2011-08-01

    Field-induced charge carriers at the semiconductor/dielectric interface of rubrene single-crystal field-effect transistors (RSC-FETs) were studied by ESR. We fabricated bottom-contact RSC-FETs to be used for ESR measurements by laminating RSCs onto SiO2 and polymer/SiO2 gate dielectric surfaces. The observed ESR spectra depict a minimal dependence on gate voltage, whose result is in sharp contrast to those obtained using RSC-FETs fabricated by the deposition of a parylene C gate dielectric. This behavior indicates that few deep trap levels are generated by the lamination technique. The dependence of ESR intensity on drain voltage was also investigated using gradual channel approximation.

  17. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    International Nuclear Information System (INIS)

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization

  18. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Polster, S. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Jank, M. P. M. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Frey, L. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  19. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components; Ladungstraegertransport in epitaktischen Strontiumtitanat-Schichten fuer den Einsatz in supraleitenden Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Veit

    2011-02-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively {sigma}(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10{sup 7}..10{sup 8} V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  20. A kinetic model for evaluating the dependence of the quantum yield of nano-TiO{sub 2} based photocatalysis on light intensity, grain size, carrier lifetime, and minority carrier diffusion coefficient: Indirect interfacial charge transfer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Baoshun, E-mail: liubaoshun@126.co [Key Laboratory of Silicate Materials Science and Engineering, Ministry of Education, Wuhan, Hubei 430070 (China) and School of Material Science and Technology, Wuhan University of Technology, Wuhan, Hubei 430070 (China); Zhao Xiujian [Key Laboratory of Silicate Materials Science and Engineering, Ministry of Education, Wuhan, Hubei 430070 (China)

    2010-04-30

    A model based on spherical TiO{sub 2} nanoparticles was developed to study heterogeneous photocatalysis based on TiO{sub 2} in the case of indirect interfacial charge transfer. In this model, the effect of light intensity (I{sub 0}), grain size (r{sub 0}), carrier lifetime (tau{sub p}), and minority carrier diffusion coefficient (D{sub p}) on the quantum yield (QY) of photocatalytic reactions was investigated in detail. Under conditions of sufficiently low incident-light intensity, the QY was found to be propor toI{sub 0}, while it decreased rapidly with an increase in I{sub 0}. In addition, the QY went to zero at a critically high light intensity. Furthermore, the QY was found to decrease with increasing r{sub 0} due to the bulk-recombination loss, and the effect of r{sub 0} on the QY became increasingly stronger with the increase in I{sub 0}. The QY decreased with the decrease in tau{sub p} and D{sub p}, which was more apparent at the critically high I{sub 0}. Under conditions of low [(RH{sub 2}){sub aq}], the QY increased with an increase in [(RH{sub 2}){sub aq}], while it remained nearly constant at high [(RH{sub 2}){sub aq}] due to the fact that the photoinduced electron interfacial transfer became the limiting step for photocatalytic reactions in the case of high [(RH{sub 2}){sub aq}].

  1. Phase analysis and determination of local charge carrier concentration in eutectic Mg{sub 2}Si–Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Levin, E.M., E-mail: levin@iastate.edu [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Hanus, R. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Cui, J. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Xing, Q.; Riedemann, T. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Lograsso, T.A. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011 (United States); Schmidt-Rohr, K. [Division of Materials Sciences and Engineering, US DOE Ames Laboratory, Ames, IA 50011 (United States); Department of Chemistry, Iowa State University, Ames, IA 50011 (United States)

    2015-05-05

    Multiphase materials attract attention due to possible combination of various properties attributed to each phase. The phase diagram of Mg–Si system shows that solidification of a melt containing about 45 and 55 at.% of Mg and Si should result in formation of Mg{sub 2}Si and Si. Two alloys, Mg{sub 45}Si{sub 55} and Mg{sub 46}Si{sub 54} + 0.5 wt.% Cu have been synthesized and studied using XRD, SEM, and {sup 29}Si NMR at 300 K, and the Seebeck effect, electrical resistivity, and thermal conductivity in the temperature range of 300–750 K have been measured. {sup 29}Si NMR detects two distinct signals, at −177 and −80 ppm, in both materials, which are assigned to Mg{sub 2}Si and Si phases, respectively. Both phases are slightly nonstoichiometric and doped with Mg. Two phases also are found by XRD and electron microscopy. {sup 29}Si NMR spin-lattice relaxation measurements in Mg{sub 2}Si and Si phases show at least two components, short and long, which can be attributed to different local carrier concentrations, high and low, respectively, reflecting a local electronic inhomogeneity in each phase. The carrier concentrations range between 0.6 × 10{sup 19} and 9 × 10{sup 19} cm{sup −3}. The Seebeck coefficient in both alloys is mostly determined by the Si phase, while the thermal conductivity is limited by the Mg{sub 2}Si phase with a lower value than that of the Si phase. By utilizing all characterization tools, we show how various experimental methods can be used as complementary methods to better understand the individual and combined properties of multiphase alloys. - Highlights: • Two distinct phases, Mg{sub 2}Si and Si, are found in Mg{sub 45}Si{sub 55} and Mg{sub 46}Si{sub 54} + 0.5 wt.% Cu alloys. • {sup 29}Si NMR spin-lattice relaxation measurements demonstrate two relaxation components in each phase. • XRD, electron microscopy, and NMR have been demonstrated as complementary methods to study multiphase alloys.

  2. Charge carrier mobility in conjugated organic polymers: simulation of an electron mobility in a carbazole-benzothiadiazole-based polymer

    Science.gov (United States)

    Li, Yaping; Lagowski, Jolanta B.

    2011-08-01

    Inorganic (mostly silicon based) solar cells are important devices that are used to solve the world energy and environmental needs. Now days, organic solar cells are attracting considerable attention in the field of photovoltaic cells because of their low cost and processing flexibility. Often conjugated polymers are used in the construction of the organic solar cells. We study the conjugated polymers' charge transport using computational approach that involves the use of the density functional theory (DFT), semiempirical (ZINDO), and Monte Carlo (MC) theoretical methods in order to determine their transfer integrals, reorganization energies, transfer rates (with the use of Marcus-Hush equation) and mobilities. We employ the experimentally determined three dimensional (3D) structure of poly(9,9'-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) to estimate the electron mobility in a similar co-alternating polymer consisting of carbazole and benzothiadiazole units (C8BT). In agreement with our previous work, we found that including an orientational disorder in the crystal reduces the electron mobility in C8BT. We hope that the proposed computational approach can be used to predict charge mobility in organic materials that are used in solar cells.

  3. Light-Induced ESR Studies of Quadrimolecular Recombination Kinetics of Photogenerated Charge Carriers in Regioregular Poly(3-alkylthiophene)/C60 Composites: Alkyl Chain Dependence

    Science.gov (United States)

    Tanaka, Hisaaki; Hasegawa, Naoki; Sakamoto, Tomotaka; Marumoto, Kazuhiro; Kuroda, Shin-ichi

    2007-08-01

    Light-induced ESR (LESR) measurements have been performed on the composites of regioregular poly(3-alkylthiophene) (RR-P3AT) and C60 by using polymers having different alkyl chains (CmH2m+1 with m=6, 8, 10, 12). The quadrimolecular recombination (QR) kinetics of photogenerated charge carriers, previously reported, have been confirmed for all the composites from the excitation power (Iex) dependence of the LESR intensity showing an ˜Iex0.25 dependence. The time decay of LESR intensity is also consistent with the QR model. Considering that only bimolecular recombination is observed in regiorandom polymer composites, the occurrence of QR strongly suggests the formation of doubly charged states, either bipolarons or polaron pairs on the regioregular polymer chains. On the other hand, the QR rate constant γ has been found to exhibit weak alkyl chain dependence, contrary to the case of the field-effect mobility of pure regioregular polymers with systematic alkyl chain dependence. This implies the significant contribution of the polymer and fullerene interface in determining γ.

  4. Absence of carrier separation in ambipolar charge and spin drift in p{sup +}-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Martinelli, L. [Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Arscott, S. [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d' Ascq (France)

    2015-10-19

    The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p{sup +} GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.

  5. Collective excitation of plasmonic hot-spots for enhanced hot charge carrier transfer in metal/semiconductor contacts

    Science.gov (United States)

    Piot, Adrien; Earl, Stuart K.; Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J.; Gómez, Daniel E.

    2015-04-01

    We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers.We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers. Electronic supplementary information (ESI) available: Detailed information on estimates of hot-electron injection efficiencies, electrodynamic simulations, sample preparation, spectroscopic and structural characterization and photocatalytic experiments. See DOI: 10.1039/c5nr01592h

  6. Relation between microstructure and dielectric breakdown in the case of aluminous ceramics (SEMM method); Comportement d'alumines face a l'injection de charges. Relation microstructure - claquage dielectrique - mesure des charges d'influence (methode SEMM)

    Energy Technology Data Exchange (ETDEWEB)

    Liebault, J.

    1999-02-01

    The dielectric breakdown is strongly linked to the injection and the accumulation of charges in a non-conducting material. The physics of charged insulators proposes mechanisms of trapping and transport of charges in aluminium oxides by considering defects as localization sources of charges and of energy. In order to measure the influence of defects on dielectric breakdown, various aluminous ceramics have been elaborated. The nature and the quantity of defects have been characterized by the nature and the rate of impurities, by porosity, by the quantity of grain boundaries and by the presence and distribution of secondary phases. These materials have undergone breakdown tests. The dielectric rigidity depends strongly on the nature and the distribution of crystallographic defects (vacancy, interstitial ions and dislocation), on the other hand porosity below 5% has no influence. The doping of an alumina ceramic containing less than 100 ppm of impurities implies a diminution of its dielectric rigidity. The measurement of the SEMM (scanning electron microscopy mirror) effect allows the characterization of insulating materials. This method permits the evaluation of the ability for materials to trap charges, it gives information about the charge kinetic of trapping, charge localization and the energy levels of traps. (A.C.)

  7. Closed-form expressions correlating exciton transport and interfacial charge carrier generation with the donor/acceptor morphology in organic bulk heterojunction solar cells

    International Nuclear Information System (INIS)

    Organic bulk heterojunction (BHJ) solar cells are frequently modeled with effective-medium device models; these models, however, do not resolve the relation between excitonic processes in the donor/acceptor (D/A) blend and the D/A morphology. In this context, we derive a simple analytical model to relate the interfacial exciton flux and the volumetric generation rate of interfacial electron–hole pairs with the morphological characteristics of a D/A blend. Our approach does not require explicit morphological information of the D/A blend, except for the specific interfacial area and the blending ratio between donor and acceptor materials, both of which can be assessed experimentally. The expressions are verified with numerical simulations based on randomly generated three-dimensional D/A morphologies – overall, good agreement is found. The analytical expressions developed in this paper can easily be integrated into existing effective-medium device models, allowing them to capture the effect of exciton transport and morphology on free charge carrier generation in more detail. These expressions potentially allow morphological features in a D/A blend to be optimized within a fast, 1D computational framework

  8. Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

    Science.gov (United States)

    Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2007-01-01

    A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

  9. Direct injection of spin-polarized carriers across YBa2Cu3O7-–La0.3Ca0.7MnO3 interface at 77 K

    Indian Academy of Sciences (India)

    K V Upadhye; K Ganesh Kumara; S C Purandare; S P Pai; R Pinto

    2002-05-01

    We report here injection of spin-polarized carriers from a half-metallic La0.3-Ca0.7MnO3 (LCMO) colossal magnetoresistive (CMR) thin film into a high-temperature superconducting YBa2Cu3O7- (YBCO) thin film studied using a micro-bridge. The LCMO and YBCO films were grown on $\\langle 100\\rangle$ LaAlO3 (LAO) substrate sequentially using pulsed laser deposition (PLD). - measurements carried out at 77 K show that while normal critical current, $I^{n}_{c}$, of the micro-bridge is 80 mA, the critical current, $I^{p}_{c}$, through the micro-bridge when injected from the CMR layer is 38 mA. This clearly shows that spin-polarized quasiparticles injected from the CMR layer into the YBCO layer suppress the critical current of the superconductor via the pair-breaking phenomena.

  10. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  11. Hydrodynamic Model for Charge Carriers

    OpenAIRE

    Choquet, Isabelle; Degond, Pierre; Schmeiser, Christian

    2003-01-01

    A set of hydrodynamic equations modeling strong ionization in semiconductors is formally derived from a kinetic framework. To that purpose, a system of Boltzmann transport equations governing the distribution functions of conduction electrons and holes is considered. Apart from impact ionization, the model accounts for phonon, lattice defects, and particle-particle scattering. Also degeneracy effects are included. The band diagram models are approximations close to the extre...

  12. Numerical solution of the corona discharge problem based on mesh redefinition and test for a charge injection law

    OpenAIRE

    Khaddour, Bassem; Atten, Pierre; Coulomb, Jean-Louis

    2008-01-01

    The paper presents a numerical and experimental study of corona discharge for a blade -plate configuration. Finite element method (FEM) is used to determine the electric potential between the electrodes and charge conservation equation is solved by the method of characteristics (MOC) to determine the charge density. The structured mesh is redefined at each step of the iterative scheme, the nodes of this structured mesh being the intersection points of the field and equipotential lines. The al...

  13. Coupling between the charge carriers and lattice distortions via modulation of the orbital angular momentum m sub l =0 of the 3d holes by polarized XAS spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pompa, M.; Turtu, S.; Campanella, F.; Pettiti, I.; Udron, D. (INFM, Dipt. di Fisica, Rome-1 Univ. (Italy)); Bianconi, A. (INFM, Dipt. di Fisica, Rome-1 Univ. (Italy) Univ. of L' Aquila (Italy)); Flank, A.M.; Lagarde, P. (LURE, 91 - Orsay (France)); Li, C. (Inst. of Physics, Academia Sinica, Beijing (China))

    1991-12-01

    The change of the orbital angular momentum m{sub l} of the Cu 3d holes going from the insulating to the metallic phase has been studied in several families of high Tc superconductors. The symmetry of the 3d{sup 9}L states in the metallic phase has been studied by quantitative analysis of the variation of polarized Cu L{sub 3} X-ray absorption spectra. At a doping level n{sub h} {approx equal} 15% we have found 10% of Zhang-Rice singlets 3d{sub x}2{sub -y}2 L(b{sub 1}) and 5% of 3d{sub 3z}2{sub -r}2L(a{sub 1}) states. Therefore the percentage of the 3d{sub 3z}2{sub -r}2L states on the total number of the 3d{sup 9}L states is about 30% i.e. much larger than the probability of single hole states 3d{sub 3z}2{sub -r}2 in the insulating phase. The EXAFS and XANES studies of the Cu site structure and dynamics in Bi{sub 2}Sr{sub 2}Ca{sub 1-x}Y{sub x}Cu{sub 2}O{sub {proportional to}} {sub 8} system point toward the coupling of the charge carriers with distortions of the Cu sites driven by the m{sub l}=0 character of the Cu 3d holes that can be called a 3d{sub z}2{sub -r}2 polaron. (orig.).

  14. Effects of Direct Fuel Injection Strategies on Cycle-by-Cycle Variability in a Gasoline Homogeneous Charge Compression Ignition Engine: Sample Entropy Analysis

    Directory of Open Access Journals (Sweden)

    Jacek Hunicz

    2015-01-01

    Full Text Available In this study we summarize and analyze experimental observations of cyclic variability in homogeneous charge compression ignition (HCCI combustion in a single-cylinder gasoline engine. The engine was configured with negative valve overlap (NVO to trap residual gases from prior cycles and thus enable auto-ignition in successive cycles. Correlations were developed between different fuel injection strategies and cycle average combustion and work output profiles. Hypothesized physical mechanisms based on these correlations were then compared with trends in cycle-by-cycle predictability as revealed by sample entropy. The results of these comparisons help to clarify how fuel injection strategy can interact with prior cycle effects to affect combustion stability and so contribute to design control methods for HCCI engines.

  15. Vincristine liposomal--INEX: lipid-encapsulated vincristine, onco TCS, transmembrane carrier system--vincristine, vincacine, vincristine sulfate liposomes for injection, VSLI.

    Science.gov (United States)

    2004-01-01

    INEX Pharmaceuticals is developing a liposomal formulation of vincristine [Onco TCS, vincacine, VSLI, Vincristine sulfate liposomes for injection] for the treatment of relapsed aggressive non-Hodgkin's lymphoma (NHL) and other cancers. It is being developed using INEX's proprietary drug-delivery technology platform called the transmembrane carrier systems (TCS), which enables the targeted intracellular delivery of various therapeutic agents. Liposomal vincristine is expected to have certain advantages over the existing standard preparation of vincristine because the use of TCS technology enables the vincristine to circulate in the blood for longer, accumulate in the tumour, and be released over an extended period of time at the tumour site. The application of TCS technology to any agent, including vincristine, has the potential to increase the efficacy and decrease the side effects of the agent. INEX decided in 1998 to focus on gaining approval for liposomal vincristine in the treatment of relapsed aggressive NHL because no standard therapy was approved for this indication. In 1999, liposomal vincristine was granted accelerated development status by the US FDA, which enables the FDA to approve it based on the surrogate endpoint of a single clinical trial. In addition, the FDA granted liposomal vincristine fast track status in August 2000. In April 2001, INEX and Elan Corporation formed a joint venture for the development and commercialisation of liposomal vincristine, with both companies contributing assets to the venture including worldwide rights to the product and intellectual property rights. The joint venture was called IE Oncology. However, in June 2002, Elan announced that it was going to focus its business strategy on three specific areas, which would not include cancer therapies. INEX announced it had regained 100% ownership of liposomal vincristine in April 2003, by reacquiring the 19.9% equity interest held by Elan and in addition retaining a fully paid

  16. A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

    International Nuclear Information System (INIS)

    A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V−1 s−1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm−2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior. (paper)

  17. Injectable hydrogel as cell carriers: Mechanism of beta-hairpin peptide hydrogel shear thinning, immediate recovery and effects on encapsulated cell payload

    Science.gov (United States)

    Yan, Congqi

    To facilitate future biomedical treatment with localized delivery and higher therapy efficacy, much research effort has been devoted recently to the development of hydrogel biomaterials to transport a therapy to in vivo target sites via simple syringe or catheter injection. Most injectable hydrogel materials are free flowing precursor solutions ex vivo that become crosslinked into hydrogels once injected in vivo in response to exposure to environmental stimuli. However, properties of the final hydrogel formed in vivo are unpredictable due to possible leakage, dilution or change of injected gel precursor solution. As an alternate, more recent strategy for injectable hydrogel therapies, beta-hairpin peptide-based hydrogels are a class of injectable hydrogel solids with significant potential use in injectable therapies. These physical hydrogels can shear-thin and consequently flow as a low-viscosity material under a sufficient shear stress but immediately recover back into a solid upon removal of the stress, allowing them to be injected as preformed gel solids. The shear-thinning and immediate self-healing properties of self-assembled beta-hairpin peptide hydrogels enable a direct delivery of gel-encapsulated cells via benign injection to tissue defect sites with well-defined final gel properties in vivo. In this dissertation, mechanisms of gel shear-thinning and immediate recovery were elucidated by investigating gel behavior during and after flow via mechanical and structural characterizations. All studied beta-hairpin hydrogels shear-thin during flow (gel network fracture into large hydrogel domains) and instantly recover after cessation of flow (gel domains are percolated which immediately reforms the solid hydrogel). Importantly, hydrogel flow behavior was further studied in a capillary geometry that mimicked the actual situation of syringe injection. It was observed that all beta-hairpin peptide hydrogels investigated displayed a promising flow profile for

  18. Noise in space-charge-limited current in a CdS-single crystal at low injection level

    NARCIS (Netherlands)

    Driedonks, F.

    1967-01-01

    Current noise spectra (25Hz–20MHz) of a CdS-diode, working under space-charge-limited conditions. show trapping noise at low frequencies and slightly suppressed noise in the upper frequency range. Suppression is relatively small due to the effect of traps.

  19. Charge trapping studies in SiO2 using high current injection from Si-rich SiO2 films

    Science.gov (United States)

    DiMaria, D. J.; Ghez, R.; Dong, D. W.

    1980-09-01

    The high electron injection phenomenon of Si-rich SiO2 films deposited on top of SiO2 can be used for novel charge trapping studies of sites normally present or purposely introduced in the SiO2. From the position and extent of current ledges observed in dark current as a function of ramped gate voltage, the capture cross section and total number of traps can be determined. Using these measurements with capacitance as a function of gate voltage, the trap distribution centroid and number of trapped charges can also be found. Several experimental examples are given including trapping in thermal SiO2, in chemically vapor deposited (CVD) SiO2, and on W, less than a monolayer thick, sandwiched between thermal and CVD SiO2. These stepped insulator metal-insulator-silicon (SI-MIS) ramp I-V results for the trapping parameters are shown to be in good agreement with those determined using the conventional photo I-V and avalanche injection with flat-band voltage tracking techniques. A numerical simulation of the ramp I-V measurements, assuming electric field-enhanced Fowler-Nordheim tunneling at the Si-rich-SiO2-SiO2 interface, is described and is shown to give good agreement with the experimental data. These techniques for SI-MIS structures are faster and easier, although less accurate than the conventional techniques.

  20. Comparison of charged particle identification using pulse shape discrimination and ΔE−E methods between front and rear side injection in silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Le Neindre, N., E-mail: leneindre@lpccaen.in2p3.fr [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Bougault, R. [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Barlini, S. [INFN e Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Firenze) (Italy); Bonnet, E. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Borderie, B. [Institut de Physique Nucléaire, CNRS/IN2P3, Université Paris-Sud 11, F-91406 Orsay Cedex (France); Casini, G. [INFN sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Firenze) (Italy); Chbihi, A. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Edelbruck, P. [Institut de Physique Nucléaire, CNRS/IN2P3, Université Paris-Sud 11, F-91406 Orsay Cedex (France); Frankland, J.D.; Gruyer, D. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Legouée, E.; Lopez, O. [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Marini, P. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Pârlog, M. [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Horia Hulubei, National Institute of Physics and Nuclear Engineering, RO-077125 Bucharest-Măgurele (Romania); Pasquali, G. [INFN e Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Firenze) (Italy); Petcu, M. [Horia Hulubei, National Institute of Physics and Nuclear Engineering, RO-077125 Bucharest-Măgurele (Romania); and others

    2013-02-11

    The response of silicon–silicon–CsI(Tl) telescopes, developed within the FAZIA collaboration, to fragments produced in nuclear reactions {sup 84}Kr+{sup 120-124}Sn at 35 A MeV, has been used to study ion identification methods. Two techniques are considered for the identification of the nuclear products in the silicon stages. The standard ΔE−E one requires signals induced in two detection layers by ions punching through the first one. Conversely, the digital Pulse Shape Analysis (PSA) allows the identification of ions stopped in the first silicon layer. The capabilities of these two identification methods have been compared for different mountings of the silicons, i.e. rear (particles entering through the low electric field side) or front (particles entering through the high electric field side) side injection. The ΔE−E identification method gives exactly the same results in both configurations. At variance, the pulse shape discrimination is very sensitive to the detector mounting. In case of rear side injection, the identification with the “energy vs. charge rise time” PSA method presents energy thresholds which are significantly lower than in the case of front side injection.

  1. Comparison of charged particle identification using pulse shape discrimination and ΔE-E methods between front and rear side injection in silicon detectors

    Science.gov (United States)

    Le Neindre, N.; Bougault, R.; Barlini, S.; Bonnet, E.; Borderie, B.; Casini, G.; Chbihi, A.; Edelbruck, P.; Frankland, J. D.; Gruyer, D.; Legouée, E.; Lopez, O.; Marini, P.; Pârlog, M.; Pasquali, G.; Petcu, M.; Rivet, M. F.; Salomon, F.; Vient, E.; Alba, R.; Baiocco, G.; Bardelli, L.; Bini, M.; Borcea, R.; Bruno, M.; Carboni, S.; Cinausero, M.; Cruceru, I.; Degerlier, M.; Dueñas, J. A.; GaŞior, K.; Gramegna, F.; Grzeszczuk, A.; Kamuda, M.; Kozik, T.; Kravchuk, V.; Lombardo, I.; Maiolino, C.; Marchi, T.; Morelli, L.; Negoita, F.; Olmi, A.; Petrascu, H.; Piantelli, S.; Poggi, G.; Rosato, E.; Santonocito, D.; Spadaccini, G.; Stefanini, A. A.; Twaróg, T.; Vigilante, M.; Fazia Collaboration

    2013-02-01

    The response of silicon-silicon-CsI(Tl) telescopes, developed within the FAZIA collaboration, to fragments produced in nuclear reactions 84Kr+120-124Sn at 35 A MeV, has been used to study ion identification methods. Two techniques are considered for the identification of the nuclear products in the silicon stages. The standard ΔE-E one requires signals induced in two detection layers by ions punching through the first one. Conversely, the digital Pulse Shape Analysis (PSA) allows the identification of ions stopped in the first silicon layer. The capabilities of these two identification methods have been compared for different mountings of the silicons, i.e. rear (particles entering through the low electric field side) or front (particles entering through the high electric field side) side injection. The ΔE-E identification method gives exactly the same results in both configurations. At variance, the pulse shape discrimination is very sensitive to the detector mounting. In case of rear side injection, the identification with the “energy vs. charge rise time” PSA method presents energy thresholds which are significantly lower than in the case of front side injection.

  2. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Science.gov (United States)

    Huang, Yanhui; Schadler, Linda S.

    2016-08-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  3. On the Nature of High Field Charge Transport in Reinforced Silicone Dielectrics: Experiment and Simulation

    CERN Document Server

    Huang, Yanhui

    2016-01-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were compared with properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial to determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails, and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  4. Charging transient in polyvinyl formal

    Indian Academy of Sciences (India)

    P K Khare; P L Jain; R K Pandey

    2001-08-01

    In the present paper charging and discharging transient currents in polyvinyl formal (PVF) were measured as a function of temperatures (40–80°C), poling fields (9.0 × 103–9.0 × 104 V/cm) and electrode combinations (Al–Al, Au–Al, Zn–Al, Bi–Al, Cu–Al and Ag–Al). The current–time characteristics have different values of slope lying between 0.42–0.56 and 1.42–1.63. The polarization is considered to be due to dipolar reorientation associated with structural motions and space charge relaxations due to trapping of injected charge carriers in energetically distributed traps.

  5. Suppression of the Oscillatory Modes of a Space Charge in the Magnetron Injection Guns of Technological Gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Kuntsevich, A. D.; Manuilov, V. N.

    2015-01-01

    We present the results of based on the PIC method numerical simulation of the dynamic processes of trapping of electrons into the adiabatic trap of a technological gyrotron for different configurations of the electric and magnetic fields in the electron beam formation region. The electrode geometry providing a low reflection coefficient of the magnetic mirror to suppress oscillatory modes in the space-charge cloud and ensure the stability of the electron beam with a high fraction of oscillatory energy in such a system has been found.

  6. Effective cytoplasmic release of siRNA from liposomal carriers by controlling the electrostatic interaction of siRNA with a charge-invertible peptide, in response to cytoplasmic pH

    Science.gov (United States)

    Itakura, Shoko; Hama, Susumu; Matsui, Ryo; Kogure, Kentaro

    2016-05-01

    Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is effectively released via electrostatic repulsion of siRNA with negatively charged SAPSP at cytoplasmic pH (7.4). The condensed complex of siRNA and positively-charged SAPSP at acidic pH (siRNA/SAPSP) was found to result in almost complete release of siRNA upon charge inversion of SAPSP at pH 7.4, with the resultant negatively-charged SAPSP having no undesirable interactions with endogenous mRNA. Moreover, liposomes encapsulating siRNA/SAPSP demonstrated knockdown efficiencies comparable to those of commercially available siRNA carriers. Taken together, SAPSP may be very useful as a siRNA condenser, as it facilitates effective cytoplasmic release of siRNA, and subsequent induction of specific RNAi effects.Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is

  7. A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region%一种考虑IGBT基区载流子注入条件的物理模型

    Institute of Scientific and Technical Information of China (English)

    杜明星; 魏克新

    2011-01-01

    A physics-based model of insulated gate bipolar transistor(IGBT) with all free-carrier injection conditions in a base region is presented,from which the ambipolar transport equations(ATEs) in high-level injection and low-level injection are deduced separately.Moreover,the boundary conditions of ATE are determined.In a more compact solution a Fourier-series solution for the ATE is used in this paper.Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach.Physics-based IGBT model is used which is proved accurate.%提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT)基区载流子不同注入条件的物理模型.在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件.采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性.

  8. Elucidating the band structure and free charge carrier dynamics of pure and impurities doped CH3NH3PbI(3-x)Cl(x) perovskite thin films.

    Science.gov (United States)

    Zhang, Zhen-Yu; Chen, Xin; Wang, Hai-Yu; Xu, Ming; Gao, Bing-Rong; Chen, Qi-Dai; Sun, Hong-Bo

    2015-11-28

    CH3NH3PbI3-xClx perovskite material has been commonly used as the free charge generator and reservoir in highly efficient perovskite-based solid-state solar photovoltaic devices. However, many of the underlying fundamental photophysical mechanisms in this material such as the perovskite transition band structure as well as the dependent relationship between the carrier properties and lattice properties still lack sufficient understanding. Here, we elucidated the fundamental band structure of the pure CH3NH3PbI3-xClx pervoskite lattice, and then reported about the dependent relationship between the free charge carrier characteristic and the different CH3NH3PbI3-xClx pervoskite lattice thin films utilizing femtosecond time-resolved pump-probe technologies. The data demonstrated that the pure perovskite crystal band structure should only have one conduction and one valence band rather than dual valences, and the pure perovskite lattice could trigger more free charge carriers with a slower recombination rate under an identical pump intensity compared with the impurities doped perovskite crystal. We also investigated the perovskite film performance when exposed to moisture and water, the corresponding results gave us a dip in the optimization of the performance of perovskite based devices, and so as a priority this material should be isolated from moisture (water). This work may propose a deeper perspective on the comprehension for this material and it is useful for future optimization of applications in photovoltaic and light emission devices. PMID:26497219

  9. Electro-optical and charge injection investigations of the donor-π-acceptor triphenylamine, oligocene–thiophene–pyrimidine and cyanoacetic acid based multifunctional dyes

    Directory of Open Access Journals (Sweden)

    Ahmad Irfan

    2015-10-01

    Full Text Available The corner stone of present study is to tune the electro-optical and charge transport properties of donor-bridge-acceptor (D-π-A triphenylamine (TPA derivatives. In the present investigation, an electron deficient moiety (pyrimidine, electron-rich moiety (thiophene and oligocene (benzene, naphthalene, anthracene, tetracene and pentacene have been incorporated as π-spacer between the donor TPA unit and cyanoacetic acid acceptor and anchoring group. The elongation of bridge usually affects the energy levels, i.e., higher the highest occupied molecular orbital (HOMO while lower the lowest unoccupied molecular orbital (LUMO thus reduces the HOMO–LUMO energy gap. The lowered LUMO energy levels of cyano-{2-[6-(4-diphenylamino-phenyl-pyrimidin-4-yl]-tetraceno[2,3-b]thiophen-8-yl}-acetic acid (TPA-PTT4 and cyano-{2-[6-(4-diphenylamino-phenyl-pyrimidin-4-yl]-pentaceno[2,3-b]thiophen-9-yl}-acetic acid (TPA-PPT5 dyes revealed that electron injected from dye to semiconductor surface might be auxiliary stable resulting in impediment of quenching. The broken co-planarity between the π-spacer conceiving LUMO and the TPA moiety would help to impede the recombination process. Moreover, it is expected that TPA derivatives with the tetracenothiophene and pentacenothiophene moieties as π-bridge would show better photovoltaic performance due to lowered LUMO energy level, higher electronic coupling constant, light harvesting efficiency and electron injection values.

  10. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    Science.gov (United States)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  11. Radionuclide carriers

    International Nuclear Information System (INIS)

    A new carrier for radionuclide technetium 99m has been prepared for scintiscanning purposes. The new preparate consists of physiologically acceptable water-insoluble Tcsup(99m)-carrier containing from 0.2 to 0.8 weight percent of stannic ion as reductor, bound to an anionic starch derivative with about 1-20% of phosphate substituents. (EG)

  12. Tailoring the surface properties and carrier dynamics in SnO2 nanowires.

    Science.gov (United States)

    Kar, Ayan; Stroscio, Michael A; Meyyappan, M; Gosztola, David J; Wiederrecht, Gary P; Dutta, Mitra

    2011-07-15

    We report a study of the role of mid-gap defect levels due to surface states in SnO(2) nanowires on carrier trapping. Ultrafast pump-probe spectroscopy provides carrier relaxation time constants that reveal the nature and positions of various defect levels due to the surface states which in turn provide details on how the carriers relax after their injection. The effect of oxygen annealing on carrier concentration is also studied through XPS valence band photoemission spectroscopy, a sensitive non-contact surface characterization technique. These measurements show that charge transfer associated with chemisorption of oxygen in different forms produces an upward band bending and leads to an increase in the depletion layer width by approximately 70 nm, thereby decreasing surface conductivity and forming the basis for the molecular sensing capability of the nanowires.

  13. Tailoring the surface properties and carrier dynamics in SnO{sub 2} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kar, Ayan; Stroscio, Michael A; Dutta, Mitra [Electrical and Computer Engineering Department, University of Illinois, Chicago, IL 60607 (United States); Meyyappan, M [Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035 (United States); Gosztola, David J; Wiederrecht, Gary P, E-mail: dutta@ece.uic.edu [Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2011-07-15

    We report a study of the role of mid-gap defect levels due to surface states in SnO{sub 2} nanowires on carrier trapping. Ultrafast pump-probe spectroscopy provides carrier relaxation time constants that reveal the nature and positions of various defect levels due to the surface states which in turn provide details on how the carriers relax after their injection. The effect of oxygen annealing on carrier concentration is also studied through XPS valence band photoemission spectroscopy, a sensitive non-contact surface characterization technique. These measurements show that charge transfer associated with chemisorption of oxygen in different forms produces an upward band bending and leads to an increase in the depletion layer width by approximately 70 nm, thereby decreasing surface conductivity and forming the basis for the molecular sensing capability of the nanowires.

  14. High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

    OpenAIRE

    Wang, Wangping; Hou, Ying; Xiong, Dayuan; Li, Ning; Lu, Wei

    2007-01-01

    We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to the photo-excited carrier multiplication factor of 10^7. This high multiplication factor is achieved by the ...

  15. A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se4 and Cu(In,GaSe2 thin film solar cells

    Directory of Open Access Journals (Sweden)

    Mohammad Abdul Halim

    2016-03-01

    Full Text Available A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se4 (CZTSSe and the CuInGaSe2 (CIGS solar cells has been carried out. For this purpose, electroluminescence (EL and also bias-dependent time resolved photoluminescence (TRPL using femtosecond (fs laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  16. Substituent-Controlled Reversible Switching of Charge Injection Barrier Heights at Metal/Organic Semiconductor Contacts Modified with Disordered Molecular Monolayers.

    Science.gov (United States)

    Nouchi, Ryo; Tanimoto, Takaaki

    2015-07-28

    Electrically stimulated switching of a charge injection barrier at the interface between an organic semiconductor and an electrode modified with a disordered monolayer (DM) is studied by using various benzenethiol derivatives as DM molecules. The switching behavior is induced by a structural change in the DM molecules and is manifested as a reversible inversion of the polarity of DM-modified Au electrode/rubrene/DM-modified Au electrode diodes. The switching direction is found to be dominantly determined by the push-back effect of the thiol bonding group, while the terminal group modulates the switching strength. A device with 1,2-benzenedithiol DMs exhibited the highest switching ratios of 20, 10(2), and 10(3) for the switching voltages of 3, 5, and 7 V, respectively. A variation in the tilt angle of benzenethiol DMs due to the application of 7 V is estimated to be smaller than 23.6° by model calculations. This study offers an understanding for obtaining highly stable operations of organic electronic devices, especially with molecular modification layers. PMID:26161447

  17. Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

    Science.gov (United States)

    Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-06-01

    The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells. PMID:27157358

  18. Distinguishing between plasmon-induced and photo-excited carriers in a device geometry (Presentation Recording)

    Science.gov (United States)

    Zhao, Hangqi; Zheng, Bob Y.; Manjavacas, Alejandro; McClain, Michael J.; Nordlander, Peter; Halas, Naomi J.

    2015-09-01

    The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, could drastically alter how sunlight is converted into electricity or fuels by increasing the efficiency of light-harvesting devices through enhanced light-matter interactions. Surface plasmons can decay directly into energetic electron-hole pairs, or "hot" carriers, which can be used for photocurrent generation or photocatalysis. However, little has been understood about the fundamental mechanisms behind plasmonic carrier generation. Here we use metallic nano-wire based hot carrier devices on a wide-bandgap semiconductor substrate to show that plasmonic hot carrier generation is proportional to field intensity enhancement instead of bulk material absorption. We also show that interband carrier generation results in less energetic carriers than plasmon-induced generation, and a plasmon is required to inject electrons over a large energy barrier. Finite Difference Time Domain (FDTD) method is used for theoretical calculations, which match well with experimental results. This work points to a clear route to increasing the efficiency of plasmonic hot carrier devices and drastically simplifies the theoretical framework for understanding the mechanisms of hot carrier generation.

  19. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    in Asia and will balance the carrier acquisitions of the United States, the United Kingdom, Russia and India. China’s current military strategy is predominantly defensive, its offensive elements being mainly focused on Taiwan. If China decides to acquire a large carrier with offensive capabilities......, then the country will also acquire the capability to project military power into the region beyond Taiwan, which it does not possess today. In this way, China will have the military capability to permit a change of strategy from the mainly defensive, mainland, Taiwan-based strategy to a more assertive strategy...... to acquire a carrier, they can either buy one or build it themselves. The easiest way would be to buy a carrier, and if that is the chosen option, then Russia would be the most likely country to build it. Technologically, it will be a major challenge for them to build one themselves and it is likely...

  20. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    Science.gov (United States)

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics. PMID:27479904

  1. Effect of the charge carrier drift on emission spectrum of the graded band-gap semiconductors in the built-in quasi-electric field

    International Nuclear Information System (INIS)

    The shape of band-to-band spectrum of graded band-gap semiconductor under conditions of nonequilibrium carrier transfer caused by the built-in quasi-electric field E is calculated. It is shown that deformation of the short wave-length part of the spectrum results from the co-ordinate dependence of the radiation recombination probability in the half-band area of a crystal. The results of calculations are confirmed by experimental measurements of photoluminescence spectra of undoped (n ≤ 1 · 1016 cm-3) graded band-gap AlxGa1-xAs solid solution with E varying in 90-650 V/cm range at 300 K

  2. First-principles hybrid functional study of the electronic structure and charge carrier mobility in perovskite CH3NH3SnI3

    Science.gov (United States)

    Wu, Li-Juan; Zhao, Yu-Qing; Chen, Chang-Wen; Wang, Lin-Zhi; Liu, Biao; Cai, Meng-Qiu

    2016-10-01

    We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3 as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 104 cm2·V-1·s-1 along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3SnI3 can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics. Project supported by the National Natural Science Foundation of China (Grant No. 51172067), the Hunan Provincial Natural Science Fund for Distinguished Young Scholars, China (Grant No. 13JJ1013), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130161110036), and the New Century Excellent Talents in University, China (Grant No. NCET-12-0171.D).

  3. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    Energy Technology Data Exchange (ETDEWEB)

    Mitoma, Nobuhiko, E-mail: MITOMA.Nobuhiko@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: MITOMA.Nobuhiko@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Aikawa, Shinya [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan); Ou-Yang, Wei [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062 (China); Gao, Xu [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123 (China); Fujiwara, Akihiko [Research and Utilization Division, Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

    2015-01-26

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  4. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.

    Science.gov (United States)

    Nakaharai, Shu; Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito

    2016-06-15

    The polarity of the charge carriers injected through Schottky junctions of α-phase molybdenum ditelluride (α-MoTe2) and various metals was characterized. We found that the Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers (electron or hole) injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2. From the estimation of the Schottky barrier heights, we obtained p-type carrier (hole) injection from a Pt/α-MoTe2 junction with a Schottky barrier height of 40 meV at the valence band edge. n-Type carrier (electron) injection from Ti/α-MoTe2 and Ni/α-MoTe2 junctions was also observed with Schottky barrier heights of 50 and 100 meV, respectively, at the conduction band edge. In addition, enhanced ambipolarity was demonstrated in a Pt-Ti hybrid contact with a unique structure specially designed for polarity-reversible transistors, in which Pt and Ti electrodes were placed in parallel for injecting both electrons and holes. PMID:27203118

  5. Electron beam induced and microemulsion templated synthesis of CdSe quantum dots: tunable broadband emission and charge carrier recombination dynamics

    Science.gov (United States)

    Guleria, Apurav; Singh, Ajay K.; Rath, Madhab C.; Adhikari, Soumyakanti

    2015-04-01

    CdSe quantum dots (QDs) were synthesized by a rapid and one step templated approach inside the water pool of AOT (sodium bis(2-ethylhexyl) sulfosuccinate) based water-in-oil microemulsions (MEs) via electron beam (EB) irradiation technique with high dose rate, which favours high nucleation rate. The interplay of different experimental parameters such as precursor concentration, absorbed dose and {{W}0} values (aqueous phase to surfactant molar ratio) of MEs were found to have interesting consequences on the morphology, photoluminescence (PL), surface composition and carrier recombination dynamics of as-grown QDs. For instance, highly stable ultrasmall (∼1.7 nm) bluish-white light emitting QDs were obtained with quantum efficiency (η) of ∼9%. Furthermore, QDs were found to exhibit tunable broadband light emission extending from 450 to 750 nm (maximum FWHM ∼180 nm). This could be realized from the CIE (Commission Internationale d’Eclairage) chromaticity co-ordinates, which varied across the blue region to the orange region thereby, conferring their potential application in white light emitting diodes. Additionally, the average PL lifetime ≤ft( ≤ft \\right) values could be varied from 18 ns to as high as 74 ns, which reflect the role of surface states in terms of their density and distribution. Another interesting revelation was the self-assembling of the initially formed QDs into nanorods with high aspect ratios ranging from 7 to 20, in correspondence with the {{W}0} values. Besides, the fundamental roles of the chemical nature of water pool and the interfacial fluidity of AOT MEs in influencing the photophysical properties of QDs were investigated by carrying out a similar study in CTAB (cetyltrimethylammonium bromide; cationic surfactant) based MEs. Surprisingly, very profound and contrasting results were observed wherein ≤ft and η of the QDs in case of CTAB MEs were found to be at least three times lower as compared to that in AOT MEs.

  6. Universal diffusion-limited injection and the hook effect in organic thin-film transistors.

    Science.gov (United States)

    Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

    2016-01-01

    The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

  7. Universal diffusion-limited injection and the hook effect in organic thin-film transistors

    Science.gov (United States)

    Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

    2016-07-01

    The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

  8. Observation of Space Charge Dynamics Inside an All Oxide Based Solar Cell.

    Science.gov (United States)

    Panigrahi, Shrabani; Calmeiro, Tomás; Martins, Rodrigo; Nunes, Daniela; Fortunato, Elvira

    2016-06-28

    The charge transfer dynamics at interfaces are fundamental to know the mechanism of photovoltaic processes. The internal potential in solar cell devices depends on the basic processes of photovoltaic effect such as charge carrier generation, separation, transport, recombination, etc. Here we report the direct observation of the surface potential depth profile over the cross-section of the ZnO nanorods/Cu2O based solar cell for two different layer thicknesses at different wavelengths of light using Kelvin probe force microscopy. The topography and phase images across the cross-section of the solar cell are also observed, where the interfaces are well-defined on the nanoscale. The potential profiling results demonstrate that under white light illumination, the photoinduced electrons in Cu2O inject into ZnO due to the interfacial electric field, which results in the large difference in surface potential between two active layers. However, under a single wavelength illumination, the charge carrier generation, separation, and transport processes between two active layers are limited, which affect the surface potential images and corresponding potential depth profile. Because of changes in the active layer thicknesses, small variations have been observed in the charge carrier transport mechanism inside the device. These results provide the clear idea about the charge carrier distribution inside the solar cell in different conditions and show the perfect illumination condition for large carrier transport in a high performance solar cell. PMID:27244449

  9. Gate currents and space charge in silicon dioxide under exposure to an electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Akulov, A.F.; Gurtov, V.A.; Nazarov, A.I.; Ogurtsov, O.F.

    1987-03-01

    The authors obtain information on the physical processes occurring in subgate dielectrics during radiation and field effects. The electron beam used on the MIS was strictly localized. The results show that the magnitude and kinetics of bulk charge accumulation do not depend on the type of ionizing radiation (electron or x-ray), or its energy and power in the range in question, but rather are determined only by the absorbed dose. The gate current during electron irradiation with small magnitude of accumulated charge is caused by nonequilibrium carriers generated by the irradiation in the SiO/sub 2/. Relaxation of the current as the charge accumulates is caused by decrease in the average field in the silicon dioxide bulk. At large magnitudes of the bulk charge, there appears an injection component of the electron current of thermalized carriers from the silicon through the Si-SiO/sub 2/ boundary by the Fowler-Nordheim mechanism

  10. Dopant deactivation and annealing characteristics of metal-oxide-semiconductor structures on germanium/boron-doped silicon after gamma irradiation or Fowler--Nordheim charge injection

    Energy Technology Data Exchange (ETDEWEB)

    Hashemipour, O.; Ang, S.S.; Brown, W.D.; Yeargan, J.R. (Department of Electrical Engineering, 3217 Bell Engineering Center, University of Arkansas, Fayetteville, Arkansas 72701 (USA)); West, L. (Department of Mechanical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (USA))

    1991-08-01

    Dopant deactivation and thermal annealing characteristics of metal-oxide-semiconductor capacitors fabricated on Ge/B-doped silicon after gamma irradiation or Fowler--Nordheim injection were investigated for the first time. A decrease of about 30% in active acceptor concentration was observed immediately after gamma irradiation or Fowler--Nordheim injection. Further deactivation of boron ({similar to}20%) occurred with annealing for temperatures of 80 {degree}C and higher. Hydrogen for the deactivation, which occurred during annealing, is thought to come from dissociation of weakly bonded Ge---H formed during the gamma irradiation or Fowler--Nordheim injection. Capacitors fabricated on conventional boron-doped substrates do not exhibit acceptor deactivation as a result of annealing following irradiation or injection. For annealing temperatures of 110 {degree}C and higher, the boron is first deactivated by the process noted above, and then is apparently reactivated by the dissociation of B---H bonds with hydrogen evolution from the structure.

  11. Preconception Carrier Screening

    Science.gov (United States)

    ... Events Advocacy For Patients About ACOG Preconception Carrier Screening Home For Patients Search FAQs Preconception Carrier Screening ... Screening FAQ179, August 2012 PDF Format Preconception Carrier Screening Pregnancy What is preconception carrier screening? What is ...

  12. Simulations of charge transport in organic light emitting diodes

    CERN Document Server

    Martin, S J

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for th...

  13. Charge exchange produced K-shell x-ray emission from Ar16+ in a tokamak plasma with neutral beam injection

    Energy Technology Data Exchange (ETDEWEB)

    Beiersdorfer, P; Bitter, M; Marion, M; Olson, R E

    2004-12-27

    High-resolution spectroscopy of hot tokamak plasma seeded with argon ions and interacting with an energetic, short-pulse neutral hydrogen beam was used to obtain the first high-resolution K-shell x-ray spectrum formed solely by charge exchange. The observed K-shell emission of Ar{sup 16+} is dominated by the intercombination and forbidden lines, providing clear signatures of charge exchange. Results from an ab initio atomic cascade model provide excellent agreement, validating a semiclassical approach for calculating charge exchange cross sections.

  14. Method of the ion beam emittance measurement in the injection beam line of DC-72 cyclotron in the presence of its space charge using the scanner to determine beam dimensions

    CERN Document Server

    Kasarinov, N Y; Kalagin, I V; Kazacha, V I

    2002-01-01

    The gradient method for measuring the transversal emittance of a high current ion beam in the injection channel of the cyclotron DC-72 is considered. The standard scanner is proposed for measuring the transversal dimensions of the beam. The formulae for determination of the mean square beam dimensions by current signals from the scanner needle are adduced. The method of the emittance recovery for axial-symmetric ion beam is set for the case when the space charge effect is essential. The algorithm for tuning of the quadrupole lenses in the injection channel of the cyclotron DC-72 for obtaining the axial-symmetric ion beam is proposed. The evaluations of the expected accuracy of the proposed method for the emittance recovery have been carried out.

  15. Charge carrier dynamics in photovoltaic materials

    NARCIS (Netherlands)

    S.A. Jensen

    2014-01-01

    We employ the experimental technique THz Time Domain spectroscopy (THz-TDS) to study the optoelectronic properties of potential photovoltaic materials. This all-optical method is useful for probing photoconductivities in a range of materials on ultrafast timescales without the application of physica

  16. Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

    Science.gov (United States)

    Yamamoto, Takao; Miyake, Masataka; Miura-Mattausch, Mitiko

    2013-04-01

    We have developed a compact model of the injection-enhanced insulated-gate bipolar transistor (IGBT) applicable for circuit optimization. The main development is modeling the hole accumulation in the floating-base region. It is demonstrated that the observed negative gate capacitance is well reproduced with the developed model.

  17. Terahertz carrier dynamics in graphene and graphene nanostructures

    DEFF Research Database (Denmark)

    Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan;

    2014-01-01

    Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

  18. Carrier-based Modulation and Capacitor Voltage Balance Control Method With Voltage Offset Injection of Single Phase Cascaded H-bridge Rectifiers%基于电压补偿分量注入的单相级联H桥整流器载波调制与电容电压平衡方法

    Institute of Scientific and Technical Information of China (English)

    王顺亮; 宋文胜; 冯晓云

    2015-01-01

    无工频牵引变压器技术是实现高速列车轻量化的手段之一。该文首先分析了无工频变压器电力牵引传动系统前端级联 H 桥整流器的工作原理,以及开关状态和网侧电流对直流侧电容充放电的影响。针对级联 H 桥整流器电容电压平衡问题,为了实现负载严重不对称情况下直流侧电容电压快速平衡的控制目标,以传统的载波移相脉宽调制方法为基础,提出了一种基于电压补偿分量注入的载波移相脉宽调制算法。考虑负载不平衡度很大的恶劣情况,对该算法的电压补偿分量进行设计与定量计算,并针对该算法多个 H 桥级联拓扑的应用进行了理论扩展。计算机仿真和半实物实验都验证了该算法的有效性和正确性。%Transformerless technology is one of the realization of high-speed railway train lightweight. The operation principle of the front-end cascaded H-bridge rectifiers is analyzed, as well as switching states and the line current’s influence on DC-link capacitors’ charging and discharging. A carrier phase-shift PWM with voltage offset injection (CPSPWM-VOI) algorithm based on the conventional CPSPWM is proposed to balance DC-link capacitors’ voltages quickly in severe terrible application condition. Voltage offset component is designed and calculated quantitatively in a bad load imbalance degree. And the proposed algorithm is extended in multiple cascaded H-bridge rectifiers. The effectiveness and correctness of the CPSPWM-VOI algorithm are verified by the computer simulation and hardware-in-the-loop experiments.

  19. Ultrafast carriers dynamics in filled-skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Liang; Xu, Xianfan, E-mail: xxu@purdue.edu [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Salvador, James R. [Chemical and Materials Systems Laboratory, GM Global R and D, Warren, Michigan 48090 (United States)

    2015-06-08

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4–0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  20. Ultrafast carriers dynamics in filled-skutterudites

    Science.gov (United States)

    Guo, Liang; Xu, Xianfan; Salvador, James R.

    2015-06-01

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4-0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  1. Self-modulation of a long externally injected relativistic charged-particle beam in a laser wake field acceleration scheme. A preliminary quantum-like investigation

    International Nuclear Information System (INIS)

    Recent investigations indicate that sufficiently long beams of charged particles, travelling in a plasma, experience the phenomenon of self-modulation. The self-modulation is driven by the plasma wake field excitation due to the beam itself, and it may become unstable under certain conditions. A preliminary theoretical investigation of the self-modulation of a relativistic charged-particle beam in overdense plasma in the presence of a preformed plasma wave is carried out, within the quantum-like description of charged particle beams provided by the Thermal Wave Model. A simple physical model for the self-modulation is put forward, described by a nonlinear Schrödinger equation coupled with the Poisson-like equation for the plasma wake potential (so-called Fedele–Shukla equations). The physical mechanism is based on the interplay of three concomitant effects, the radial thermal dispersion (associated with the emittance ε), the radial ponderomotive effects of a preexisting plasma wave (which provides the guidance for the beam), and the self-interaction of the plasma wake field generated by the beam itself

  2. What Is Carrier Screening?

    Science.gov (United States)

    ... you want to learn. Search form Search Carrier screening You are here Home Testing & Services Testing for ... help you make the decision. What Is Carrier Screening? Carrier screening checks if a person is a " ...

  3. Charge correlations in polaron hopping through molecules

    OpenAIRE

    Schmidt, Benjamin B.; Hettler, Matthias H.; Schön, Gerd

    2009-01-01

    In many organic molecules the strong coupling of excess charges to vibrational modes leads to the formation of polarons, i.e., a localized state of a charge carrier and a molecular deformation. Incoherent hopping of polarons along the molecule is the dominant mechanism of transport at room temperature. We study the far-from-equilibrium situation where, due to the applied bias, the induced number of charge carriers on the molecule is high enough such that charge correlations become relevant. W...

  4. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  5. HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT

    OpenAIRE

    Przyrembel, G.; Mahnkopf, R.; Wagemann, H.

    1988-01-01

    The influence of synchrotron-light irradiation for p- and n-channel MOSFET's on their sensitivity to hot carrier degradation was investigated. The radiation induces additional interface states and a positive oxide charge. Annealing at 450°C reduces the interface state density to its initial value but not the oxide charge. A hot carrier stress can compensate this remaining charge by trapping electrons. This effect produces an enhanced shift of the threshold voltage compared to non-irradiated d...

  6. 47 CFR 69.124 - Interconnection charge.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Interconnection charge. 69.124 Section 69.124... Computation of Charges § 69.124 Interconnection charge. (a) Until December 31, 2001, local exchange carriers not subject to price cap regulation shall assess an interconnection charge expressed in dollars...

  7. Hot Carrier extraction with plasmonic broadband absorbers

    CERN Document Server

    Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J; Mulvaney, Paul; Gomez, Daniel E

    2016-01-01

    Hot charge carrier extraction from metallic nanostructures is a very promising approach for applications in photo-catalysis, photovoltaics and photodetection. One limitation is that many metallic nanostructures support a single plasmon resonance thus restricting the light-to-charge-carrier activity to a spectral band. Here we demonstrate that a monolayer of plasmonic nanoparticles can be assembled on a multi-stack layered configuration to achieve broad-band, near-unit light absorption, which is spatially localised on the nanoparticle layer. We show that this enhanced light absorbance leads to $\\sim$ 40-fold increases in the photon-to-electron conversion efficiency by the plasmonic nanostructures. We developed a model that successfully captures the essential physics of the plasmonic hot-electron charge generation and separation in these structures. This model also allowed us to establish that efficient hot carrier extraction is limited to spectral regions where the photons possessing energies higher than the S...

  8. Characterization of a constant current charge detector.

    Science.gov (United States)

    Mori, Masanobu; Chen, Yongjing; Ohira, Shin-Ichi; Dasgupta, Purnendu K

    2012-12-15

    Ion exchangers are ionic equivalents of doped semiconductors, where cations and anions are equivalents of holes and electrons as charge carriers in solid state semiconductors. We have previously demonstrated an ion exchange membrane (IEM) based electrolyte generator which behaves similar to a light-emitting diode and a charge detector (ChD) which behaves analogous to a p-i-n photodiode. The previous work on the charge detector, operated at a constant voltage, established its unique ability to respond to the charge represented by the analyte ions regardless of their redox properties, rather than to their conductivities. It also suggested that electric field induced dissociation (EFID) of water occurs at one or both ion exchange membranes. A logical extension is to study the behavior of the same device, operated in a constant current mode (ChD(i)). The evidence indicates that in the present operational mode the device also responds to the charge represented by the analytes and not their conductivity. Injection of a base into a charge detector operated in the constant voltage mode was not previously examined; in the constant current mode, base injection appears to inhibit EFID. The effects of applied current, analyte residence time and outer channel fluid composition were individually examined; analyte ions of different mobilities as well as affinities for the respective IEMs were used. While the exact behavior is somewhat dependent on the applied current, strong electrolytes, both acids and salts, respond the highest and in a near-uniform fashion, weak acids and their salts respond in an intermediate fashion and bases produce the lowest responses. A fundamentally asymmetric behavior is observed. Injected bases but not injected acids produce a poor response; the effects of incorporating a strong base as the electrolyte in the anion exchange membrane (AEM) compartment is far greater than incorporating an acid in the cation exchange membrane (CEM) compartment. These

  9. Decay of electric charge on corona charged polyethylene

    International Nuclear Information System (INIS)

    This paper describes a study on the surface potential decay of corona charged low density polyethylene (LDPE) films. A conventional corona charging process is used to deposit charge on the surface of film and surface potential is measured by a compact JCI 140 static monitor. The results from corona charged multilayer sample reveal that the bulk process dominates charge decay. In addition, the pulsed-electro-acoustic (PEA) technique has been employed to monitor charge profiles in corona charged LDPE films. By using the PEA technique, we are able to monitor charge migration through the bulk. Charge profiles in corona charged multilayer sample are consistent with surface potential results. Of further significance, the charge profiles clearly demonstrate that double injection has taken place in corona charged LDPE films

  10. Identifying the magnetoconductance responses by the induced charge transfer complex states in pentacene-based diodes

    Science.gov (United States)

    Huang, Wei-Shun; Lee, Tsung-Hsun; Guo, Tzung-Fang; Huang, J. C. A.; Wen, Ten-Chin

    2012-07-01

    We investigate the magnetoconductance (MC) responses in photocurrent, unipolar injection, and bipolar injection regimes in pentacene-based diodes. Both photocurrent and bipolar injection contributed MC responses show large difference in MC line shape, which are attributed to triplet-polaron interaction modulated by the magnetic field dependent singlet fission and the intersystem crossing of the polaron pair, respectively. By blending 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane into pentacene, all the MC responses are suppressed but the MC response at unipolar injection regime is enhanced, which is attributed to the induced charge transfer complex states (CT complex states). This work identify the MC responses between single carrier contributed MC and exciton related MC by the induced CT complex states.

  11. Free carrier generation and recombination in PbS quantum dot solar cells

    NARCIS (Netherlands)

    Kurpiers, Jona; Balazs, Daniel M.; Paulke, Andreas; Albrecht, Steve; Lange, Ilja; Protesescu, Loredana; Kovalenko, Maksym V.; Loi, Maria Antonietta; Neher, Dieter

    2016-01-01

    Time Delayed Collection Field and Bias Assisted Charge Extraction (BACE) experiments are used to investigate the charge carrier dynamics in PbS colloidal quantum dot solar cells. We find that the free charge carrier creation is slightly field dependent, thus providing an upper limit to the fill fact

  12. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco

    2015-02-11

    We investigate the prototypical hybrid interface formed between PTCDA and conductive n-doped ZnO films by means of complementary optical and electronic spectroscopic techniques. We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.

  13. Temozolomide Injection

    Science.gov (United States)

    Temozolomide is used to treat certain types of brain tumors. Temozolomide is in a class of medications called alkylating ... Temozolomide injection comes as a powder to be added to fluid and injected over 90 minutes intravenously ( ...

  14. Methotrexate Injection

    Science.gov (United States)

    Methotrexate injection is used alone or in combination with other medications to treat gestational trophoblastic tumors (a ... in bones) after surgery to remove the tumor. Methotrexate injection is also used to treat severe psoriasis ( ...

  15. Leucovorin Injection

    Science.gov (United States)

    ... injection is used to prevent harmful effects of methotrexate (Rheumatrex, Trexall; cancer chemotherapy medication) when methotrexate is used to to treat certain types of cancer. Leucovorin injection is used to treat people who ...

  16. Pembrolizumab Injection

    Science.gov (United States)

    Pembrolizumab injection is used to treat melanoma (a type of skin cancer) that cannot be treated with ... who have a specific type of melanoma tumor. Pembrolizumab injection is also used to treat a certain ...

  17. Paclitaxel Injection

    Science.gov (United States)

    ... with other medications. Paclitaxel injection manufactured with polyoxyethylated castor oil is used to treat ovarian cancer (cancer that ... cancer, and lung cancer. Paclitaxel injection with polyoxyethylated castor oil is also used to treat Kaposi's sarcoma (a ...

  18. Evolocumab Injection

    Science.gov (United States)

    Evolocumab injection is used along with diet and certain cholesterol-lowering medications, HMG-CoA reductase inhibitors (statins), ... cholesterol cannot be removed from the body normally). Evolocumab injection is in a class of medications called ...

  19. Octreotide Injection

    Science.gov (United States)

    Octreotide immediate-release injection is used to decrease the amount of growth hormone (a natural substance) produced ... be treated with surgery, radiation, or another medication. Octreotide immediate-release injection is also used to control ...

  20. Naltrexone Injection

    Science.gov (United States)

    Naltrexone injection is used along with counseling and social support to help people who have stopped drinking large amounts of alcohol to avoid drinking again. Naltrexone injection is also used along with counseling and ...

  1. Vancomycin Injection

    Science.gov (United States)

    Vancomycin injection is used alone or in combination with other medications to treat certain serious infections such ... infections of the lungs, skin, blood, and bones. Vancomycin injection is in a class of medications called ...

  2. Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

    Science.gov (United States)

    Ye, Yu; Xiao, Jun; Wang, Hailong; Ye, Ziliang; Zhu, Hanyu; Zhao, Mervin; Wang, Yuan; Zhao, Jianhua; Yin, Xiaobo; Zhang, Xiang

    2016-07-01

    Electrically controlling the flow of charge carriers is the foundation of modern electronics. By accessing the extra spin degree of freedom (DOF) in electronics, spintronics allows for information processes such as magnetoresistive random-access memory. Recently, atomic membranes of transition metal dichalcogenides (TMDCs) were found to support unequal and distinguishable carrier distribution in different crystal momentum valleys. This valley polarization of carriers enables a new DOF for information processing. A variety of valleytronic devices such as valley filters and valves have been proposed, and optical valley excitation has been observed. However, to realize its potential in electronics it is necessary to electrically control the valley DOF, which has so far remained a significant challenge. Here, we experimentally demonstrate the electrical generation and control of valley polarization. This is achieved through spin injection via a diluted ferromagnetic semiconductor and measured through the helicity of the electroluminescence due to the spin–valley locking in TMDC monolayers. We also report a new scheme of electronic devices that combine both the spin and valley DOFs. Such direct electrical generation and control of valley carriers opens up new dimensions in utilizing both the spin and valley DOFs for next-generation electronics and computing.

  3. Naloxone Injection

    Science.gov (United States)

    ... doctor to get a new injection device.The automatic injection device has an electronic voice system that provides step by step directions ... guard has been removed, safely dispose of the automatic injection ... local garbage/recycling department to learn about take-back programs in ...

  4. Subcutaneous Injections

    DEFF Research Database (Denmark)

    Thomsen, Maria

    at the injection site was influenced by the needle length and the injected volume. Several imaging analysis tools were optimized for the characterization, and these tools were implemented also on subcutaneous injections in rats, visualized by low dose μCT, and used for characterization of the morphology in mouse...

  5. Ustekinumab Injection

    Science.gov (United States)

    ... Do not inject into an area where the skin is tender, bruised, red, or hard or where you have scars or stretch marks.Your doctor or pharmacist will ... injection.you should know that ustekinumab injection may decrease your ability ... new or changing skin lesions, minor infections (such as open cuts or ...

  6. Higher lung accumulation of intravenously injected organic nanotubes

    Directory of Open Access Journals (Sweden)

    Maitani Y

    2013-01-01

    Full Text Available Yoshie Maitani,1 Yuri Nakamura,1 Masao Kon,1 Emi Sanada,1 Kae Sumiyoshi,1 Natsuki Fujine,1 Masumi Asakawa,2 Masaki Kogiso,2 Toshimi Shimizu21Institute of Medicinal Chemistry, Hoshi University, Tokyo, Japan; 2Nanotube Research Center (NTRC, National Institute of Advanced Industrial Science and Technology (AIST, Tsukuba, JapanAbstract: The size and shape of intravenously injected particles can affect their biodistribution and is of importance for the development of particulated drug carrier systems. In this study, organic nanotubes (ONTs with a carboxyl group at the surface, a length of approximately 2 µm and outer diameter of 70–90 nm, were injected intravenously into tumor-bearing mice. To use ONTs as drug carriers, the biodistribution in selected organs of ONTs postinjection was examined using irinotecan, as an entrapped water-soluble marker inside ONTs, and gadolinium-chelated ONT, as an ONT marker, and compared with that of a 3 µm fluorescently labeled spherical microparticle which was similar size to the length of ONTs. It was found that for irinotecan, its active metabolite and gadolinium-chelated ONTs were highly accumulated in the lung, but to a lower level in the liver and spleen. On the other hand, microparticles deposited less in the lung and more highly in the liver. Moreover, histologic examination showed ONTs distributed more in lung tissues in part, whereas microparticles were present in blood vessels postinjection. These preliminary results support the notion of using negatively charged ONTs as intravascular carriers to maximize accumulation in the lung whilst reducing sequestration by the liver and spleen. This finding suggested that ONTs are potential carriers for lung-targeting drug delivery.Keywords: organic nanotube, lung, biodistribution, microparticle, particle shape

  7. Around the laboratories: Dubna: Physics results and progress on bubble chamber techniques; Stanford (SLAC): Operation of a very rapid cycling bubble chamber; Daresbury: Photographs of visitors to the Laboratory; Argonne: Charge exchange injection tests into the ZGS in preparation for a proposed Booster

    CERN Multimedia

    1969-01-01

    Around the laboratories: Dubna: Physics results and progress on bubble chamber techniques; Stanford (SLAC): Operation of a very rapid cycling bubble chamber; Daresbury: Photographs of visitors to the Laboratory; Argonne: Charge exchange injection tests into the ZGS in preparation for a proposed Booster

  8. Decay of electric charge on corona charged polyethylene

    International Nuclear Information System (INIS)

    In this paper, the surface potential decay of corona-charged low density polyethylene (LDPE) films has been investigated. It has been found that for the same sample thickness the faster decay occurs in the sample with a higher charging voltage. For the same charging voltage, the surface potential in the thinner sample shows rapid decay. Our new evidence from both the surface potential measurement on multilayer samples and space charge measurement suggests the surface potential decay is a bulk limited process. More importantly, space charge measurement indicates double injection has taken place during corona charging process.

  9. Charge Breeding of Radioactive Ions

    CERN Document Server

    Wenander, F J C

    2013-01-01

    Charge breeding is a technique to increase the charge state of ions, in many cases radioactive ions. The singly charged radioactive ions, produced in an isotope separator on-line facility, and extracted with a low kinetic energy of some tens of keV, are injected into a charge breeder, where the charge state is increased to Q. The transformed ions are either directed towards a dedicated experiment requiring highly charged ions, or post-accelerated to higher beam energies. In this paper the physics processes involved in the production of highly charged ions will be introduced, and the injection and extraction beam parameters of the charge breeder defined. A description of the three main charge-breeding methods is given, namely: electron stripping in gas jet or foil; external ion injection into an electron-beam ion source/trap (EBIS/T); and external ion injection into an electron cyclotron resonance ion source (ECRIS). In addition, some preparatory devices for charge breeding and practical beam delivery aspects ...

  10. Charged Frenkel biexcitons in organic molecular crystals

    CERN Document Server

    Agranovich, V M; Kamchatnov, A M

    2001-01-01

    It is known that the energy of the lowest electronic transition in neutral molecules of anthracene, tetracene and other polyacenes is blue shifted in comparison with the corresponding transition energy in mono-valent molecular ions. This effect in molecular crystal may be responsible for the attraction between molecular (Frenkel) exciton and charge carrier. Due to this attraction the bound state of Frenkel exciton and free charge (charged Frenkel exciton) may be formed. The same mechanism can be responsible for formation of charged biexcitons (bound state of two Frenkel excitons and a charge carrier). Calculations are performed for molecular crystals like tetracene by means of one-dimensional lattice model

  11. Transient analysis of charging system with centrifugal charging pumps

    International Nuclear Information System (INIS)

    The CARD (CVCS Analysis for Design) code has been developed for the transient analysis of the letdown and charging system of Korea Standard Nuclear Power Plant. The computer code has been already verified and validated by comparing with actual test results. Analyzed in this paper are the flow and pressure transients in the charging line. The sensitivity studies are performed to select the acceptable control parameters of charging line backpressure controller and seal injection flow controller. In addition, the seal injection system transient is evaluated for the pressurizer auxiliary spray operation. It is shown that the charging line backpressure controller control parameters yield a significant effect on the charging system stability. The results obtained from this study will be used to verify the system design and to select the optimum control parameters for the charging system with centrifugal charging pumps

  12. Improved blue light-emitting polymeric device by the tuning of drift mobility and charge balance

    Science.gov (United States)

    Chin, Byung Doo; Suh, Min Chul; Lee, Seong Taek; Chung, Ho Kyoon; Lee, Chang Hee

    2004-03-01

    We have prepared blue polymer-small molecule hybrid electroluminescence devices with improved efficiency and lower driving voltage by the statistical design method. Analysis of time-of-flight measurement shows that amorphous small molecule hole-transporter blended with a blue light-emitting polymer increases the field-dependent hole mobility, with transition from nondispersive to dispersive transport induced by the charge-trapping effect. Moreover, at the electroluminescent devices with different electron injection/transport layer (LiF/Al, LiF/Ca/Al, and Alq3/LiF/Al), efficiency was further increased. We have analyzed that carrier mobility of a multilayered device can also be controlled by the change of electron injection and transport layers. We find that structural design and matching overall charge balance is an essential factor to improve both the operating voltage and efficiency of existing blue polymer devices.

  13. Solution-processed high-LUMO-level polymers in n-type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

    International Nuclear Information System (INIS)

    In solution-processed organic field-effect transistors (OFETs), the polymers with high level of lowest unoccupied molecular orbitals (LUMOs, > −3.5 eV) are especially susceptible to electron-trapping that causes low electron mobility and strong instability in successive operation. However, the role of high-LUMO-level polymers could be different depending on their locations relative to the semiconductor/insulator interface, or could even possibly benefit the device in some cases. We constructed unconventional polymer heterojunction n-type OFETs to control the location of the same polymer with a high LUMO level, to be in, under, or above the accumulation channel. We found that although the devices with the polymer in the channel suffer from dramatic instability, the same polymer causes much less instability when it acts as a dielectric modification layer or charge injection layer. Especially, it may even improve the device performance in the latter case. This result helps to improve our understanding of the electron-trapping and explore the value of these polymers in OFETs. (invited article)

  14. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Thilo; Jäger, Christof M. [Department of Chemistry and Pharmacy, Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen (Germany); Jordan, Meredith J. T. [School of Chemistry, University of Sydney, Sydney, NSW 2006 (Australia); Clark, Timothy, E-mail: tim.clark@fau.de [Department of Chemistry and Pharmacy, Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen (Germany); Centre for Molecular Design, University of Portsmouth, Portsmouth PO1 2DY (United Kingdom)

    2015-07-28

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

  15. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

    International Nuclear Information System (INIS)

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves

  16. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  17. Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion.

    Science.gov (United States)

    Matsubara, Kohei; Abe, Kentaro; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-04-01

    Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory is appropriate to interpret the carrier transport in anisotropic TIPS pentacene thin film. TRM-SHG method is a facile and effective way to directly visualize transport process in anisotropic materials and to evaluate injection and transport processes simultaneously. PMID:27451638

  18. Separation and recombinatiuon of charge carriers in solar cells with a nanostructured ZnO electrode; Trennung und Rekombination von Ladungstraegern in Solarzellen mit nanostrukturierter ZnO-Elektrode

    Energy Technology Data Exchange (ETDEWEB)

    Tornow, Julian

    2010-03-02

    The publication investigates electrodes consisting of ZnO nanorods deposited hydrothermally on conductive glass substrate (conductive glass). The electrodes are transparent to visible light and are sensitized for solar cell applications by a light-absorbing layer which in this case consists either of organometallic dye molecules (N3) or of an indium sulfide layer with a thickness of only a few nanometers. Electric contacts for the sensitized electrode are either made of a liquid electrolyte or of a perforated solid electrolyte. Methods of analysis were impedance spectroscopy, time-resolved photocurrent measurements, and time-resolved microwave photoconductivity. A high concentration of up to 10{sup 20} was found in the ZnO nanorods. The dye-sensitized solar cell showed exessively fast recombination with the oxydized dye molecules (sub-{mu}s) but a slow recombination rate with the oxydized redox ions of the electrolyte (ms). In the indium sulfide solar cells, the charges are separated at the contact with the ZnO nanorods while contact with the perforated CuSCN conductor is not charge-separating. Recombination takes place in indium sulfide, directly between the perforated conductor and ZnO, and also via the charge-separating contact with decreasing rates.

  19. Asymmetric Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Rasmussen, Peter Omand;

    2010-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on the measurements, it is shown that the spread effect of the discrete components from the motor current spectra is very effective independent of the modulation...

  20. Peptide-Carrier Conjugation

    DEFF Research Database (Denmark)

    Hansen, Paul Robert

    2015-01-01

    To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....

  1. The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxidesemiconductor technology

    Institute of Scientific and Technical Information of China (English)

    Qin Jun-Rui; Chen Shu-Ming; Liu Bi-Wei; Liu Zheng; Liang Bin; Du Yan-Kang

    2011-01-01

    Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies,which are significant for charge sharing,thus affecting the propagated single event transient pulsewidths in circuits.The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases.The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases,whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough.Additionally,it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current,and has little effect on the drift and diffusion.The change in substrate doping has a much greater effect on PMOS than on NMOS.

  2. Analytical Estimate of Open-Circuit Voltage of a Schottky-Barrier Solar Cell Under High Level Injection

    Directory of Open Access Journals (Sweden)

    Pramila Mahala

    2011-01-01

    Full Text Available The open-circuit voltage developed across a Schottky-Barrier (SB solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was noticed while comparing our result with that previously calculated in low level injection conditions. Four different metals suitable for making Schottky contact with n-Si were investigated and calculated the variation of Voc with different values of doping concentrations in the semiconductor. The effect of surface recombination velocities (SRV of charge carriers on Voc was also estimated at such high level injections.

  3. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  4. Development of radioisotope labeled polymeric carriers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung Jin; Jeong, Jea Min; Hwang, Hyun Jeong [Ewha Womans University, Seoul (Korea)

    2000-04-01

    This research was performed with the aim of developing polymeric radioisotope or drug carriers for obtaining efficient diagnostic therapeutic efficacy. As polymers, polyethylene oxides, polylactides, polycaprolactone were chosen to prepare the devices including micelle system, microemulsion, nanospheres. In addition, anticancer drug loaded polylactide microparticulates were fabricated as a regional chemotherapeutics for the treatment of cancer. Technetium or radioactive iodine was labeled to the polymeric carriers via ligands such as DTPA and HPP, respectively. Labeling efficiency was above 90% and stable enough up to 24 hours. Moreover, injected polymer carriers demonstrated higher blood maintenance and bone uptake than Tin colloid, a control. These results suggested that radioisotope carrying polymeric particulate are promising tools for diagnosing blood vessels or bones. Besides, anticancer drug loaded particulates demonstrated appropriate maintenance of therapeutic concentration and localization. Therefore it was proposed that this therapeutic system may be potential as a cancer therapy modality. 20 refs., 24 figs.,5 tabs. (Author)

  5. Certolizumab Injection

    Science.gov (United States)

    ... and swelling and scales on the skin), active ankylosing spondylitis (a condition in which the body attacks the ... continues. When certolizumab injection is used to treat ankylosing spondylitis, it is usually given every 2 weeks for ...

  6. Olanzapine Injection

    Science.gov (United States)

    ... of interest in life, and strong or inappropriate emotions). Olanzapine injection is used to treat episodes of ... this medication affects you.you should know that alcohol can add to the drowsiness caused by this ...

  7. Haloperidol Injection

    Science.gov (United States)

    ... of interest in life, and strong or inappropriate emotions). Haloperidol injection is also used to control motor ... this medication affects you.you should know that alcohol can add to the drowsiness caused by this ...

  8. Tigecycline Injection

    Science.gov (United States)

    ... in a person who was not in the hospital), skin infections, and infections of the abdomen (area between the ... that developed in people who were in a hospital or foot infections in people who have diabetes. Tigecycline injection is ...

  9. Golimumab Injection

    Science.gov (United States)

    Golimumab injection is used alone or with other medications to relieve the symptoms of certain autoimmune disorders ( ... did not help or could not be tolerated. Golimumab is in a class of medications called tumor ...

  10. Ferumoxytol Injection

    Science.gov (United States)

    Ferumoxytol injection is used to treat iron-deficiency anemia (a lower than normal number of red blood ... pharmacist what other prescription and nonprescription medications, vitamins, nutritional supplements, and herbal products you are taking or ...

  11. Aripiprazole Injection

    Science.gov (United States)

    ... mixed with water (Abilify Maintena) and as a suspension (liquid) (Aristada) to be injected into a muscle ... decisions, and react quickly. Do not drive a car or operate machinery until you know how this ...

  12. Ertapenem Injection

    Science.gov (United States)

    Ertapenem injection is used to treat certain serious infections, including pneumonia and urinary tract, skin, diabetic foot, ... for the prevention of infections following colorectal surgery. Ertapenem is in a class of medications called carbapenem ...

  13. Testosterone Injection

    Science.gov (United States)

    Testosterone cypionate (Depo-Testosterone), testosterone enanthate (Delatestryl), testosterone undecanoate (Aveed), and testosterone pellet (Testopel) are forms of testosterone injection used to treat symptoms of low testosterone in men who have hypogonadism (a ...

  14. Fludarabine Injection

    Science.gov (United States)

    ... also sometimes used to treat non-Hodgkin's lymphoma (NHL; cancer that begins in a type of white ... this medication. You should not plan to have children while receiving fludarabine injection or for at least ...

  15. Ramucirumab Injection

    Science.gov (United States)

    ... dose of ramucirumab injection. Tell your doctor or nurse if you experience any of the following while you receive ramucirumab: uncontrollable shaking of a part of the body; back pain or spasms; chest pain and tightness; chills; flushing; ...

  16. Basiliximab Injection

    Science.gov (United States)

    ... prescribed for other uses; ask your doctor or pharmacist for more information. ... Ask your pharmacist any questions you have about basiliximab injection.It is important for you to keep a written list of ...

  17. Nafcillin Injection

    Science.gov (United States)

    ... injection is in a class of medications called penicillins. It works by killing bacteria.Antibiotics such as ... and pharmacist if you are allergic to nafcillin; penicillins; cephalosporin antibiotics such as cefaclor, cefadroxil, cefazolin, cefdinir, ...

  18. Oxacillin Injection

    Science.gov (United States)

    ... injection is in a class of medications called penicillins. It works by killing bacteria.Antibiotics such as ... and pharmacist if you are allergic to oxacillin; penicillins; cephalosporin antibiotics such as cefaclor, cefadroxil, cefazolin, cefdinir, ...

  19. Ampicillin Injection

    Science.gov (United States)

    ... injection is in a class of medications called penicillins. It works by killing bacteria.Antibiotics such as ... and pharmacist if you are allergic to ampicillin; penicillins; cephalosporin antibiotics such as cefaclor, cefadroxil, cefazolin (Ancef, ...

  20. Levofloxacin Injection

    Science.gov (United States)

    ... injection is used to treat infections such as pneumonia; chronic bronchitis; and sinus, urinary tract, kidney, prostate ( ... skin or eyes dark urine decreased urination seizures unusual bruising or bleeding joint or muscle pain Levofloxacin ...

  1. Linezolid Injection

    Science.gov (United States)

    Linezolid injection is used to treat infections, including pneumonia, and infections of the skin and blood. Linezolid ... to 2 months or more after your treatment) unusual bleeding or bruising cough, chills, sore throat, and ...

  2. Cefazolin Injection

    Science.gov (United States)

    ... joint, genital, blood, heart valve, respiratory tract (including pneumonia), biliary tract, and urinary tract infections. Cefazolin injection ... effects. Call your doctor if you have any unusual problems while using this medication.If you experience ...

  3. Moxifloxacin Injection

    Science.gov (United States)

    ... appropriate for them to remain available as a therapeutic option.FDA is continuing to assess safety issues ... review has shown that fluoroquinolones when used systemically (i.e. tablets, capsules, and injectable) are associated with disabling ...

  4. Gemcitabine Injection

    Science.gov (United States)

    ... with surgery. Gemcitabine is also used to treat cancer of the pancreas that has spread to other parts of the ... 4 weeks. When gemcitabine is used to treat cancer of pancreas it may be injected once every week. The ...

  5. Fluconazole Injection

    Science.gov (United States)

    ... and fungal infections of the eye, prostate (a male reproductive organ), skin and nails. Fluconazole injection is ... Motrin, others) and naproxen (Aleve, Anaprox, Naprelan); oral contraceptives (birth control pills); oral medication for diabetes such ...

  6. Insulin Injection

    Science.gov (United States)

    ... or buttocks. Do not inject insulin into muscles, scars, or moles. Use a different site for each ... you are using insulin.Alcohol may cause a decrease in blood sugar. Ask your doctor about the ...

  7. Tesamorelin Injection

    Science.gov (United States)

    ... is colored, cloudy, contains particles, or if the expiration date on the bottle has passed.Never reuse ... swelling of the face or throat shortness of breath difficulty breathing fast heartbeat dizziness fainting Tesamorelin injection ...

  8. Secukinumab Injection

    Science.gov (United States)

    ... secukinumab solution before injecting it. Check that the expiration date has not passed and that the liquid ... fever, sweats, or chills, muscle aches, shortness of breath, warm, red, or painful skin or sores on ...

  9. Alirocumab Injection

    Science.gov (United States)

    ... further decrease the amount of low-density lipoprotein (LDL) cholesterol ('bad cholesterol') in the blood. Alirocumab injection is ... antibodies. It works by blocking the production of LDL cholesterol in the body to decrease the amount of ...

  10. Radiation-induced charge dynamics in dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Labonte, K.

    1982-12-01

    A general physical model is presented for the analysis of charge dynamics in dielectrics exposed to ionizing radiation. Discrete trap levels, recombination between trapped and free carriers, trapping and detrapping events, and the mobility of positive and negative charge carriers are included in the theory. This model is applied to electron beam irradiated Teflon FEP foils and results for various boundary conditions are compared with experimental data from a split Faraday cup arrangement.

  11. Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

    Science.gov (United States)

    Riuttanen, L.; Kivisaari, P.; Svensk, O.; Vasara, T.; Myllys, P.; Oksanen, J.; Suihkonen, S.

    2015-03-01

    Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.

  12. Opto-electronic properties of charged conjugated molecules

    NARCIS (Netherlands)

    Fratiloiu, S.

    2007-01-01

    The aim of this thesis is to provide fundamental insight into the nature and opto-electronic properties of charge carriers on conjugated oligomers and polymers. Electronic structure, optical absorption properties and distribution of charge carriers along the chains of different conjugated materials

  13. Acoustic charge manipulation in semiconductor nanostructures for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Voelk, Stefan

    2010-07-30

    Within this thesis, the influence of a surface acoustic wave (SAW) on the luminescence of semiconductor nanostructures is investigated. Beginning with the physics of low-dimensional semiconductor structures, the quantum mechanical and optical properties of quantum dot (QD) systems are discussed. In particular, intrinsic parameters of QDs such as morphology, composition, strain and occupation with carriers are taken into account. Subsequently, the influence of an applied electric field and of externally induced strain are introduced. From this general approach, the discussion is focused to quantum posts (QPs) which are columnar shaped semiconductor nanostructures. In contrast to conventional self-assembled QDs, the height of the QPs can be controlled by the epitaxial growth process. Due to the adjustable height, electronic states and therefore the exciton transition energies can be tailored. Furthermore, QPs are embedded in a matrix-quantum-well structure which has important influence on the carrier dynamic if a SAW is excited on the sample. Mainly, two effects have to be considered regarding the interaction of charge carriers with SAWs: deformation potential coupling and acousto-electric coupling. For the investigated material and used SAW frequencies, acousto-electric coupling dominates the interaction between charges and SAW. For a quantum well (QW) structure, the periodic band modulation dissociates excitons into sequential stripes of electrons and holes which then are conveyed by the SAW. This so called bipolar transport or charge conveyance effect can be used to inject carriers into remote QD structures and has already been demonstrated for QD ensembles. The injection of carriers into individual quantum posts is successfully demonstrated for the first time within this work. The spectrally resolved photoluminescence (PL) data of individual QPs show an unexpected switching of PL lines which cannot be induced by varying other parameters, e.g. the laser intensity

  14. Effect of Molecular Orientation, on Photovoltaic Efficiency and Carrier Transport, in a New Semiconducting Polymer

    Science.gov (United States)

    Kažukauskas, V.; Pranaitis, M.; Sentein, C.; Rocha, L.; Raimond, P.; Duyssens, I.; van, I.; Severen; Lutsen, L.; Cleij, T.; Vanderzande, D.

    2008-03-01

    New functionalized soluble poly(p-phenylene vinylene) derivative bearing polar molecules was designed and synthesized in order to investigate effects of molecular orientation in polymer photovoltaic devices. The active polar molecule is the 4-(N-butyl-N-2-hydroxyethyl)-1- nitro-benzene group. The grafting of the push-pull molecule with a donor/transmitter/acceptor structure, possessing a large ground state dipole moment, enables the molecular orientation by a dc electric field. An internal electric field stored in such system facilitates exciton dissociation and improves charge transport in single-layer devices. In our systems an increase in the external quantum efficiency by a factor of about 1.5 to 2 is estimated. The associated effects of orientation on the carrier injection and transport properties were evidenced.

  15. The Gate-Oxide Breakdown Effect Coupled by Channel Hot-Carrier-Effect in SOI MOSFET's

    Institute of Scientific and Technical Information of China (English)

    HAO Yue; ZHU Jiangang; REN Hongxia; ZHANG Weidong

    2001-01-01

    Based on SIMOS SOI devices, the gate-oxide breakdown effect coupled by channel hot carriers is studied in this paper. It is found that,in n-channel devices, the gate-oxide breakdown is at tributed to the fixed defect in SiO2 crystal lattice structure induced by high-energy hole injection into gate oxide. And the trapping of electron negative charge in gate oxide also accelerates the breakdown.While in PMOS devices, both local electric field in oxide enhancement caused by trapped electrons ,and the electric field on interface increasing induced by trapped holes and the generation of permanent damage in crystal lattice, can lead to gate oxide breakdown directly. The studies also show that the behavior after oxide layer broken down in NMOS and PMOS is different.

  16. Hot-carrier reliability in OPTVLD-LDMOS

    Institute of Scientific and Technical Information of China (English)

    Cheng Junji; Chen Xingbi

    2012-01-01

    An improved structure that eliminates hot-carrier effects (HCE) in optimum variation lateral doping (OPTVLD) LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.

  17. Charge transfer and transport in DNA

    OpenAIRE

    Jortner, Joshua; Bixon, Mordechai; Langenbacher, Thomas; Michel-Beyerle, Maria E.

    1998-01-01

    We explore charge migration in DNA, advancing two distinct mechanisms of charge separation in a donor (d)–bridge ({Bj})–acceptor (a) system, where {Bj} = B1,B2, … , BN are the N-specific adjacent bases of B-DNA: (i) two-center unistep superexchange induced charge transfer, d*{Bj}a → d∓{Bj}a±, and (ii) multistep charge transport involves charge injection from d* (or d+) to {Bj}, charge hopping within {Bj}, and charge trapping by a. For off-resonance coupling, mechanism i prevails with the char...

  18. Ibritumomab Injection

    Science.gov (United States)

    ... have received ibritumomab injection.do not have any vaccinations without talking to your doctor.you should know ... cells) and myelodysplastic syndrome (condition in which blood cells do not ... online (http://www.fda.gov/Safety/MedWatch) or by phone (1-800-332-1088).

  19. Tositumomab Injection

    Science.gov (United States)

    ... have received tositumomab injection.do not have any vaccinations without talking to your doctor.you should know ... blood cells), myelodysplastic syndrome (condition in which blood cells do not ... online (http://www.fda.gov/Safety/MedWatch) or by phone (1-800-332-1088).

  20. Doxycycline Injection

    Science.gov (United States)

    ... call your doctor.plan to avoid unnecessary or prolonged exposure to sunlight and to wear protective clothing, sunglasses, and sunscreen. Doxycycline injection may make your skin sensitive to sunlight.you should know that when doxycycline is used during pregnancy or in babies or children up to age ...

  1. Adalimumab Injection

    Science.gov (United States)

    ... swelling and scales on the skin), chronic plaque psoriasis (a skin disease in which red, scaly patches form on some areas of the body). Adalimumab injection is in a class of medications called tumor necrosis factor (TNF) inhibitors. It works by blocking the action ...

  2. Medroxyprogesterone Injection

    Science.gov (United States)

    ... injection when you are a teenager or young adult. Tell your doctor if you or anyone in your family has osteoporosis; if you have or have ever had any other bone disease or anorexia nervosa (an eating disorder); or if you drink a ...

  3. Lanreotide Injection

    Science.gov (United States)

    Lanreotide injection is used to treat people with acromegaly (condition in which the body produces too much growth hormone, causing enlargement of the hands, feet, and facial features; joint pain; and other symptoms) who have not successfully, or cannot be treated ...

  4. Paliperidone Injection

    Science.gov (United States)

    Invega® Trinza® ... Paliperidone extended-release injections (Invega® Sustenna, Invega® Trinza) are used to treat schizophrenia (a mental illness that causes disturbed or unusual thinking, loss of interest in life, and strong or ...

  5. Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC,continuous expressions of surface potential and inversion layer carrier density are derived.Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.

  6. The value of energy carriers

    NARCIS (Netherlands)

    Gool, W. van

    1987-01-01

    The value of energy carriers can be described thermodynamically by the amount of heat (enthalpy method) or work (exergy or availability method) that can be obtained from the carriers. Prices for energy carriers are used in economics to express their values. The prices for energy carriers are often r

  7. Trapped charge densities in Al2O3-based silicon surface passivation layers

    Science.gov (United States)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2016-06-01

    In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al2O3 layers are grown by atomic layer deposition with very thin (˜1 nm) SiO2 or HfO2 interlayers or interface layers. In SiO2/Al2O3 and HfO2/Al2O3 stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al2O3. In Al2O3/SiO2/Al2O3 or Al2O3/HfO2/Al2O3 stacks, very high total charge densities of up to 9 × 1012 cm-2 are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al2O3 layer thickness between silicon and the HfO2 or the SiO2 interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al2O3 layers opens the possibility to engineer the field-effect passivation in the solar cells.

  8. Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

    Science.gov (United States)

    Cai, Yu; Sha, Shuang

    2016-09-01

    This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers.

  9. Spin injection and detection by resonant tunneling structure

    OpenAIRE

    Glazov, M.M.; Tarasenko, S. A.; Alekseev, P. S.; Odnoblyudov, M. A.; Chistyakov, V. M.; Yassievich, I. N.

    2004-01-01

    A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The...

  10. Duchenne muscular dystrophy carriers

    International Nuclear Information System (INIS)

    By means of magnetic resonance imaging (MRI), the proton spin-lattice relaxation times (T1 values) of the skeletal muscles were measured in Duchenne muscular dystrophy (DMD) carriers and normal controls. The bound water fraction (BWF) was calculated from the T1 values obtained, according to the fast proton diffusion model. In the DMD carriers, T1 values of the gluteus maximus and quadriceps femoris muscles were significantly higher, and BWFs of these muscles were significantly lower than in normal control. Degenerative muscular changes accompanied by interstitial edema were presumed responsible for this abnormality. No correlation was observed between the muscle T1 and serum creatine kinase values. The present study showed that MRI could be a useful method for studying the dynamic state of water in both normal and pathological skeletal muscles. Its possible utility for DMD carrier detection was discussed briefly. (orig.)

  11. The value of energy carriers

    OpenAIRE

    Gool, W. van

    1987-01-01

    The value of energy carriers can be described thermodynamically by the amount of heat (enthalpy method) or work (exergy or availability method) that can be obtained from the carriers. Prices for energy carriers are used in economics to express their values. The prices for energy carriers are often related to their enthalpies when other properties and conditions are equivalent. However, it has been suggested that the exergy of the energy carriers is the proper quantity to establish their value...

  12. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  13. Monte Carlo Studies of Charge Transport Below the Mobility Edge

    OpenAIRE

    Jakobsson, Mattias

    2012-01-01

    Charge transport below the mobility edge, where the charge carriers are hopping between localized electronic states, is the dominant charge transport mechanism in a wide range of disordered materials. This type of incoherent charge transport is fundamentally different from the coherent charge transport in ordered crystalline materials. With the advent of organic electronics, where small organic molecules or polymers replace traditional inorganic semiconductors, the interest for this type of h...

  14. Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

    Energy Technology Data Exchange (ETDEWEB)

    Esqueda, Ivan S., E-mail: isanchez@isi.edu [Information Sciences Institute, University of Southern California, Arlington, Virginia 22203 (United States); Cress, Cory D. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States); Che, Yuchi; Cao, Yu; Zhou, Chongwu [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)

    2014-02-07

    The effects of near-interfacial trapping induced by ionizing radiation exposure of aligned single-walled carbon nanotube (SWCNT) arrays are investigated via measurements of gate hysteresis in the transfer characteristics of aligned SWCNT field-effect transistors. Gate hysteresis is attributed to charge injection (i.e., trapping) from the SWCNTs into radiation-induced traps in regions near the SWCNT/dielectric interface. Self-consistent calculations of surface-potential, carrier density, and trapped charge are used to describe hysteresis as a function of ionizing radiation exposure. Hysteresis width (h) and its dependence on gate sweep range are investigated analytically. The effects of non-uniform trap energy distributions on the relationship between hysteresis, gate sweep range, and total ionizing dose are demonstrated with simulations and verified experimentally.

  15. A low noise FET with integrated charge restoration for radiation detectors

    International Nuclear Information System (INIS)

    A novel pulsed, non-optical, reset technique for use in charge sensitive amplifiers and radiation detectors is described. The first stage FET and charge restoration are integrated into one 5-terminal device labelled the Pentafet. A pulse of minority carriers is injected directly into the channel of the FET. The technique is fast and there are no after effects on the operation of the FET. Very low noise performance is achieved even at high count rates. The high energy rate product capability of the device is demonstrated by analyzing Mn x-rays in the presence of high energy electrons from an Sr 90 beta source and in a transmission electron microscope (TEM)

  16. Information and Its Carriers.

    Science.gov (United States)

    Herrmann, F.; And Others

    1985-01-01

    Describes: (1) the structure of a data transmission source, carrier, and receiver; (2) a quantitative measure for the amount of data, followed by some quantitative examples of data transmission processes; (3) the concept of data current; (4) data containers; and (5) how this information can be used to structure physics courses. (JN)

  17. Bending Two-Dimensional Materials To Control Charge Localization and Fermi-Level Shift.

    Science.gov (United States)

    Yu, Liping; Ruzsinszky, Adrienn; Perdew, John P

    2016-04-13

    High-performance electronics requires the fine control of semiconductor conductivity. In atomically thin two-dimensional (2D) materials, traditional doping technique for controlling carrier concentration and carrier type may cause crystal damage and significant mobility reduction. Contact engineering for tuning carrier injection and extraction and carrier type may suffer from strong Fermi-level pinning. Here, using first-principles calculations, we predict that mechanical bending, as a unique attribute of thin 2D materials, can be used to control conductivity and Fermi-level shift. We find that bending can control the charge localization of top valence bands in both MoS2 and phosphorene nanoribbons. The donor-like in-gap edge-states of armchair MoS2 ribbon and their associated Fermi-level pinning can be removed by bending. A bending-controllable new in-gap state and accompanying direct-indirect gap transition are predicted in armchair phosphorene nanoribbon. We demonstrate that such emergent bending effects are realizable. The bending stiffness as well as the effective thickness of 2D materials are also derived from first principles. Our results are of fundamental and technological relevance and open new routes for designing functional 2D materials for applications in which flexuosity is essential. PMID:26938458

  18. Ultrafast charge-transfer in organic photovoltaic interfaces: geometrical and functionalization effects.

    Science.gov (United States)

    Santos, Elton J G; Wang, W L

    2016-09-21

    Understanding the microscopic mechanisms of electronic excitation in organic photovoltaic cells is a challenging problem in the design of efficient devices capable of performing sunlight harvesting. Here we develop and apply an ab initio approach based on time-dependent density functional theory and Ehrenfest dynamics to investigate photoinduced charge transfer in small organic molecules. Our calculations include mixed quantum-classical dynamics with ions moving classically and electrons quantum mechanically, where no experimental external parameter other than the material geometry is required. We show that the behavior of photocarriers in zinc phthalocyanine (ZnPc) and C60 systems, an effective prototype system for organic solar cells, is sensitive to the atomic orientation of the donor and the acceptor units as well as the functionalization of covalent molecules at the interface. In particular, configurations with the ZnPc molecules facing on C60 facilitate charge transfer between substrate and molecules that occurs within 200 fs. In contrast, configurations where ZnPc is tilted above C60 present extremely low carrier injection efficiency even at longer times as an effect of the larger interfacial potential level offset and higher energetic barrier between the donor and acceptor molecules. An enhancement of charge injection into C60 at shorter times is observed as binding groups connect ZnPc and C60 in a dyad system. Our results demonstrate a promising way of designing and controlling photoinduced charge transfer on the atomic level in organic devices that would lead to efficient carrier separation and maximize device performance.

  19. Ultrafast charge-transfer in organic photovoltaic interfaces: geometrical and functionalization effects.

    Science.gov (United States)

    Santos, Elton J G; Wang, W L

    2016-09-21

    Understanding the microscopic mechanisms of electronic excitation in organic photovoltaic cells is a challenging problem in the design of efficient devices capable of performing sunlight harvesting. Here we develop and apply an ab initio approach based on time-dependent density functional theory and Ehrenfest dynamics to investigate photoinduced charge transfer in small organic molecules. Our calculations include mixed quantum-classical dynamics with ions moving classically and electrons quantum mechanically, where no experimental external parameter other than the material geometry is required. We show that the behavior of photocarriers in zinc phthalocyanine (ZnPc) and C60 systems, an effective prototype system for organic solar cells, is sensitive to the atomic orientation of the donor and the acceptor units as well as the functionalization of covalent molecules at the interface. In particular, configurations with the ZnPc molecules facing on C60 facilitate charge transfer between substrate and molecules that occurs within 200 fs. In contrast, configurations where ZnPc is tilted above C60 present extremely low carrier injection efficiency even at longer times as an effect of the larger interfacial potential level offset and higher energetic barrier between the donor and acceptor molecules. An enhancement of charge injection into C60 at shorter times is observed as binding groups connect ZnPc and C60 in a dyad system. Our results demonstrate a promising way of designing and controlling photoinduced charge transfer on the atomic level in organic devices that would lead to efficient carrier separation and maximize device performance. PMID:27314747

  20. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.