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Sample records for charge carrier injection

  1. Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols

    NARCIS (Netherlands)

    Asadi, K.; Gholamrezaie, F.; Smits, E.C.P.; Blom, W.M.; Boer, B. de

    2007-01-01

    Charge carrier injection into two semiconducting polymers is investigated in field-effect transistors using gold source and drain electrodes that are modified by self-assembled monolayers of alkanethiols and perfluorinated alkanethiols. The presence of an interfacial dipole associated with the molec

  2. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    CERN Document Server

    Hofmann, Felix J; Lupton, John M

    2016-01-01

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process, or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The resul...

  3. Controlling charge carrier injection in organic electroluminescent devices via ITO substrate modification

    CERN Document Server

    Day, S

    2001-01-01

    and the ITO substrate was found to shift the work function of the electrode, and so modify the barrier to hole injection. Scanning Kelvin probe measurements show that the ITO work function is increased by 0.25 eV with a film of TNAP, while a C sub 6 sub 0 film is found to reduce the work function by a comparable amount. The former has been attributed to a charge-transfer effect resulting in Fermi level alignment between the ITO and the TNAP layer, however the latter is believed to result from both charge transfer and a covalent interaction between C sub 6 sub 0 and ITO. The performance of devices incorporating these modified ITO electrode are rationalised in terms of the work function modification, film thicknesses and the hole transport properties of the two films. Competition between the induced work function change and the increasingly significant tunnelling barrier with thickness means that device performance is not as good as that provided by the SAMs. Direct processing of the ITO substrate has also been...

  4. Tuning THz emission properties of Bi2Sr2CaCu2O8+δ intrinsic Josephson junction stacks by charge carrier injection

    Science.gov (United States)

    Kizilaslan, O.; Rudau, F.; Wieland, R.; Hampp, J. S.; Zhou, X. J.; Ji, M.; Kiselev, O.; Kinev, N.; Huang, Y.; Hao, L. Y.; Ishii, A.; Aksan, M. A.; Hatano, T.; Koshelets, V. P.; Wu, P. H.; Wang, H. B.; Koelle, D.; Kleiner, R.

    2017-03-01

    We report on doping and undoping experiments of terahertz (THz) emitting intrinsic Josephson junction stacks, where the change in charge carrier concentration is achieved by heavy current injection. The experiments were performed on stand-alone structures fabricated from a Bi2Sr2CaCu2O{}8+δ single crystal near optimal doping. The stacks contained about 930 intrinsic Josephson junctions. On purpose, the doping and undoping experiments were performed over only a modest range of charge carrier concentrations, changing the critical temperature of the stack by less than 1 K. We show that both undoping and doping is feasible also for the large intrinsic Josephson junction stacks used for THz generation. Even moderate changes in doping introduce large changes in the THz emission properties of the stacks. The highest emission power was achieved after doping a pristine sample.

  5. Photoinduced Transformation between Charge Carrier and Spin Carrier in Polymers

    Institute of Scientific and Technical Information of China (English)

    MEI Yuan; ZHAO Chang; SUN Xin

    2006-01-01

    By dynamical simulations, we show a transforming process between neutral soliton (spin carrier) and charged soliton (charge carrier) in polymers via photo-excitation, taking a polaron as the transitional bridge. It is photoinduced transformation between spin carrier and charge carrier. In this way, we demonstrate an access for polymers to be applied to spintronics.

  6. Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

    Science.gov (United States)

    Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

    2017-04-01

    Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

  7. Study of Charge Carrier Transport in GaN Sensors

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2016-04-01

    Full Text Available Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  8. Hot carrier injection degradation under dynamic stress

    Institute of Scientific and Technical Information of China (English)

    Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

    2011-01-01

    In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0V and Vd = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

  9. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    Science.gov (United States)

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  10. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  11. A universal thermal conductance of charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Greiner, A.; Reggiani, L. [Lecce, Univ. (Italy). Ist. Nazionale di Fisica della Materia. Dipt. di Scienza dei Materiali; Kuhn, T. [Munster, Westfalische Wilhelms-Univ. (Germany). Inst. fur Theoretische Physik II; Varani, L. [Montpellier, Univ. Montpellier II (France). Centre d`Electronique et de Micro-optoelectronique

    1996-12-01

    A universal thermal conductance of charge carriers K = 2{pi}{sup 2}k{sub B}{sup 2}T / (3h) is rigorously derived within a correlation-function formalism. Similar to the case of the universal electrical conductance G = 2e{sup 2} / h this result pertains to one-dimensional, ballistic, and degenerate conditions for non-interacting particles.

  12. Hardware Trojan by Hot Carrier Injection

    CERN Document Server

    Shiyanovskii, Y; Papachristou, C; Weyer, D; Clay, W

    2009-01-01

    This paper discusses how hot carrier injection (HCI) can be exploited to create a trojan that will cause hardware failures. The trojan is produced not via additional logic circuitry but by controlled scenarios that maximize and accelerate the HCI effect in transistors. These scenarios range from manipulating the manufacturing process to varying the internal voltage distribution. This new type of trojan is difficult to test due to its gradual hardware degradation mechanism. This paper describes the HCI effect, detection techniques and discusses the possibility for maliciously induced HCI trojans.

  13. Localized charge carriers in graphene nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Bischoff, D., E-mail: dominikb@phys.ethz.ch; Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, 8093 Zurich (Switzerland)

    2015-09-15

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  14. Carriers recombination processes in charge trapping memory cell by simulation

    Institute of Scientific and Technical Information of China (English)

    Song Yun-Cheng; Liu Xiao-Yan; Du Gang; Kang Jin-Feng; Han Ru-Qi

    2008-01-01

    We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell's performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.

  15. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  16. Distribution of charge carriers in dissipative structure of semiconductors

    CERN Document Server

    Kamilov, I K; Kovalev, A S

    2002-01-01

    It has been shown experimentally that redistribution of the charge carrier concentration takes place in the volume of Te and InSb monocrystals under formation and excitation by the strong field of a dissipative structure in nonequilibrium electron-hole plasma. This leads to a situation when the presence of only longitudinal autosolitons in the dissipative structure reduces the charge carrier concentration outside autosolitons while the presence of only transversal autosolitons makes the charge carriers concentration larger. These effects are explained in the following manner: longitudinal autosolitons, occurring in nonequilibrium electron-hole plasma created by the Joule heating are considered as cold and transversal autosolitons are considered as hot ones

  17. Carrier doping by current injection into LaOFFeAs

    Energy Technology Data Exchange (ETDEWEB)

    Lazareva, Irina; Koval, Yury; Steiner, Christian; Mueller, Paul [Department of Physics, Universitaet Erlangen (Germany); Wurmehl, Sabine; Buechner, Bernd [IFW Dresden (Germany); Stuerzer, Tobias; Johrendt, Dirk [Department Chemie, LMU Muenchen (Germany)

    2013-07-01

    Recently, we were able to change the carrier concentration of hole-doped high-T{sub c} superconductors by injection of large currents along the c-axis. We extend this type of experiments to electron-doped pnictides. From our earlier interpretation we should expect that trapping of electrons caused by current injection would decrease the available carrier concentration. Indeed, by various experiments with superconductors from the LaO{sub 1-x}F{sub x}FeAs family we are able to show that trapped electrons caused by current injection perpendicular to the FeAs planes decrease the carrier concentration. We present a spectacular confirmation of this interpretation by the T{sub c} increase by more than 15 K in heavily overdoped La{sub 0.74}F{sub 0.26}FeAs. We performed similar experiments with the recently discovered 1048 layered pnictides of the composition Ca{sub 10}(FeAs){sub 10}(Pt{sub 4}As{sub 8}). The general tendency of carrier doping by trapped electrons was confirmed. A rather interesting discovery was the evolution of hysteretic c-axis IV-characteristics. This is a strong indication of intrinsic Josephson effects. We discuss these results in terms of a change of anisotropy by carrier doping.

  18. Charge carrier coherence and Hall effect in organic semiconductors.

    Science.gov (United States)

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  19. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    OpenAIRE

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-01-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found incre...

  20. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  1. Injection of majority carriers through InSe-GaSe heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Bakumenko, V.L.; Tagaev, V.G.

    1982-10-01

    Injection of majority carriers through heterojunction under intensive illumination conditions is discussed. Experimental results of injection of majority carriers through InSe-GaSe heterojunctions have been presented.

  2. Mobile charge carriers in pulse-irradiated poly- and oligothiophenes

    NARCIS (Netherlands)

    Haas, M.P. de; Laan, G.P. van der; Wegewijs, B.; Leeuw, D.M. de; Bäuerle, P.; Rep, D.B.A.; Fichou, D.

    1999-01-01

    Lower limits of the intrinsic charge carrier mobility in the solid phase of a series of oligothiophene compounds were determined with the pulse-radiolysis time-resolved microwave conductivity technique, PR-TRMC. The mobility values fall roughly into two regimes and show no correlation with the numbe

  3. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy.

    Science.gov (United States)

    Ponseca, C S; Sundström, V

    2016-03-28

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  4. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility

    Science.gov (United States)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

  5. Injectable nanomaterials for drug delivery: carriers, targeting moieties, and therapeutics.

    Science.gov (United States)

    Webster, David M; Sundaram, Padma; Byrne, Mark E

    2013-05-01

    Therapeutics such as nucleic acids, proteins/peptides, vaccines, anti-cancer, and other drugs have disadvantages of low bio-availability, rapid clearance, and high toxicity. Thus, there is a significant need for the development of efficient delivery methods and carriers. Injectable nanocarriers have received much attention due to their vast range of structures and ability to contain multiple functional groups, both within the bulk material and on the surface of the particles. Nanocarriers may be tailored to control drug release and/or increase selective cell targeting, cellular uptake, drug solubility, and circulation time, all of which lead to a more efficacious delivery and action of therapeutics. The focus of this review is injectable, targeted nanoparticle drug delivery carriers highlighting the diversity of nanoparticle materials and structures as well as highlighting current therapeutics and targeting moieties. Structures and materials discussed include liposomes, polymersomes, dendrimers, cyclodextrin-containing polymers (CDPs), carbon nanotubes (CNTs), and gold nanoparticles. Additionally, current clinical trial information and details such as trial phase, treatment, active drug, carrier sponsor, and clinical trial identifier for different materials and structures are presented and discussed.

  6. Identification of the Charge Carriers in Cerium Phosphate Ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Hannah L.; Jonghe, Lutgard C. De

    2010-06-02

    The total conductivity of Sr-doped cerium orthophosphate changes by nearly two orders of magnitude depending on the oxygen and hydrogen content of the atmosphere. The defect model for the system suggests that this is because the identity of the dominant charge carrier can change from electron holes to protons when the sample is in equilibrium with air vs. humidified hydrogen. In this work are presented some preliminary measurements that can help to clarify this exchange between carriers. The conduction behavior of a 2percent Sr-doped CePO4 sample under symmetric atmospheric conditions is investigated using several techniques, including AC impedance, H/D isotope effects, and chronoamperometry.

  7. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    NARCIS (Netherlands)

    Suchand Sandeep, C.S.; Ten Cate, S.; Schins, J.M.; Savenije, T.J.; Liu, Y.; Law, M.; Kinge, S.; Houtepen, A.J.; Siebbeles, L.D.A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has

  8. Charge-carrier screening in single-layer graphene.

    Science.gov (United States)

    Siegel, David A; Regan, William; Fedorov, Alexei V; Zettl, A; Lanzara, Alessandra

    2013-04-05

    The effect of charge-carrier screening on the transport properties of a neutral graphene sheet is studied by directly probing its electronic structure. We find that the Fermi velocity, Dirac point velocity, and overall distortion of the Dirac cone are renormalized due to the screening of the electron-electron interaction in an unusual way. We also observe an increase of the electron mean free path due to the screening of charged impurities. These observations help us to understand the basis for the transport properties of graphene, as well as the fundamental physics of these interesting electron-electron interactions at the Dirac point crossing.

  9. Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

    CERN Document Server

    Kazakevich, L A

    2003-01-01

    It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

  10. Performance of the Charge Injection Capability of Suzaku XIS

    CERN Document Server

    Nakajima, H; Matsumoto, H; Tsuru, T G; Koyama, K; Tsunemi, H; Hayashida, K; Torii, K; Namiki, M; Katsuda, S; Shoji, M; Matsuura, D; Miyauchi, T; Dotani, T; Ozaki, M; Murakami, H; Bautz, M W; Kissel, S E; LaMarr, B; Prigozhin, G Y

    2007-01-01

    A charge injection technique is applied to the X-ray CCD camera, XIS (X-ray Imaging Spectrometer) onboard Suzaku. The charge transfer inefficiency (CTI) in each CCD column (vertical transfer channel) is measured by the injection of charge packets into a transfer channel and subsequent readout. This paper reports the performances of the charge injection capability based on the ground experiments using a radiation damaged device, and in-orbit measurements of the XIS. The ground experiments show that charges are stably injected with the dispersion of 91eV in FWHM in a specific column for the charges equivalent to the X-ray energy of 5.1keV. This dispersion width is significantly smaller than that of the X-ray events of 113eV (FWHM) at approximately the same energy. The amount of charge loss during transfer in a specific column, which is measured with the charge injection capability, is consistent with that measured with the calibration source. These results indicate that the charge injection technique can accura...

  11. Charge injection and transport in quantum confined and disordered systems

    NARCIS (Netherlands)

    Houtepen, A.J.

    2007-01-01

    Quantum dots and conducting polymers are modern semiconductors with a high potential for applications such as lasers, LEDs, displays, solar cells etc. These applications require the controlled addition of charge carriers into the material and knowledge of the details of charge transport. This thesis

  12. Profiling of the injected charge drift current transients by cross-sectional scanning technique

    Science.gov (United States)

    Gaubas, E.; Ceponis, T.; Pavlov, J.; Baskevicius, A.

    2014-02-01

    The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.

  13. Profiling of the injected charge drift current transients by cross-sectional scanning technique

    Energy Technology Data Exchange (ETDEWEB)

    Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Pavlov, J.; Baskevicius, A. [Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius (Lithuania)

    2014-02-07

    The electric field distribution and charge drift currents in Si particle detectors are analyzed. Profiling of the injected charge drift current transients has been implemented by varying charge injection position within a cross-sectional boundary of the particle detector. The obtained profiles of the induction current density and duration of the injected charge drift pulses fit well the simulated current variations. Induction current transients have been interpreted by different stages of the bipolar and monopolar drift of the injected carriers. Profiles of the injected charge current transients registered in the non-irradiated and neutron irradiated Si diodes are compared. It has been shown that the mixed regime of the competing processes of drift, recombination, and diffusion appears in the measured current profiles on the irradiated samples. The impact of the avalanche effects can be ignored based on the investigations presented. It has been shown that even a simplified dynamic model enabled us to reproduce the main features of the profiled transients of induced charge drift current.

  14. Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process

    Science.gov (United States)

    Villeneuve-Faure, C.; Makasheva, K.; Boudou, L.; Teyssedre, G.

    2016-06-01

    Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

  15. Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process.

    Science.gov (United States)

    Villeneuve-Faure, C; Makasheva, K; Boudou, L; Teyssedre, G

    2016-06-17

    Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

  16. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Science.gov (United States)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  17. Charge carrier dissociation and recombination in polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deibel, Carsten [Experimental Physics VI, Julius-Maximilians-University of Wuerzburg, 97074 Wuerzburg (Germany)

    2009-12-15

    In polymer:fullerene solar cells, the origin of the losses in the field-dependent photocurrent is still controversially debated. We contribute to the ongoing discussion by performing photo-induced charge extraction measurements on poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C{sub 61} butyric acid methyl ester solar cells in order to investigate the processes ruling charge carrier decay. Calculating the drift length of photogenerated charges, we find that polaron recombination is not limiting the photocurrent for annealed devices. Additionally, we applied Monte Carlo simulations on blends of conjugated polymer chain donors with acceptor molecules in order to gain insight into the polaron pair dissociation. The dissociation yield turns out to be rather high, with only a weak field dependence. With this complementary view on dissociation and recombination, we stress the importance of accounting for polaron pair dissociation, polaron recombination as well as charge extraction when considering the loss mechanisms in organic solar cells. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  18. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  19. Material simulation of charge carrier transport properties of polymer dielectrics

    Science.gov (United States)

    Unge, Mikael; Christen, Thomas; Törnkvist, Christer; ABB Corporate Research Team

    To understand electron and hole transport in solid material requires to know its electronic properties, i.e. the density of states (DOS) and whether the states are spatially localized or delocalized. The states closest to the band edges may be localized, states further away can be delocalized. This transition from localized to delocalized states determines the mobility edge, above the mobility edge the mobility is expected to be high. A real polymer is never perfect; it contains a number of oxidative states, bonding defects and molecular impurities. These imperfections yield electronic states that can appear in the band gap of the polymer, traps. Traps can be shallow, i.e. close to the band edges, from these states the charge carrier easily can jump to a state in the band edge or another shallow state. Other traps can be deep, in these states it is likely that the charge carrier remains and become immobile. All these properties related to the electronic structure of the polymer, including its defects, affects the conductivity of the polymer. Linear scaling Density Functional Theory has been applied to calculate electronic structure of amorphous polyethylene. In particular DOS, trap levels and mobility edges are studied.

  20. Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sandwiched structure.

    Science.gov (United States)

    Xu, Jie; Xu, Jun; Zhang, Pengzhan; Li, Wei; Chen, Kunji

    2013-10-21

    Si nanocrystals are formed by using KrF pulsed laser crystallization of an amorphous SiC/ultrathin amorphous Si/amorphous SiC sandwiched structure. Electrons and holes are injected into Si nanocrystals via a biased conductive AFM tip and the carrier decay and transportation behaviours at the nanoscale are studied by joint characterization techniques of Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (CAFM). Quantification of the surface charge density is realized by solving the Poisson equation based on KPFM measurements. Besides, the asymmetric barrier height for electrons and holes is considered to play a dominant role in controlling the charge retention and transportation characteristics. The methodology developed in this work is promising for studying the charge injection and transportation process in other materials and structures at the nanoscale.

  1. Charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene): Effects of carrier bimolecular recombination and trapping

    Science.gov (United States)

    Soci, Cesare; Moses, Daniel; Xu, Qing-Hua; Heeger, Alan J.

    2005-12-01

    We have studied the charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene) over a broad time range using fast (t>100ps) transient photoconductivity measurements. The carrier density was also monitored (t>100fs) by means of photoinduced absorption probed at the infrared active vibrational modes. We find that promptly upon charge-carrier photogeneration, the initial polaron dynamics is governed by bimolecular recombination, while later in the subnanosecond time regime carrier trapping gives rise to an exponential decay of the photocurrent. The more sensitive transient photocurrent measurements indicate that in the low excitation regime, when the density of photocarriers is comparable to that of the trapping states (˜1016cm-3) , carrier hopping between traps along with transport via extended states determines the carrier relaxation, a mechanism that is manifested by a long-lived photocurrent “tail.” This photocurrent tail is reduced by lowering the temperature and/or by increasing the excitation density. Based on these data, we develop a comprehensive kinetic model that takes into account the bipolar charge transport, the free-carrier bimolecular recombination, the carrier trapping, and the carrier recombination involving free and trapped carriers.

  2. Real-time charge carrier motion in P3HT studied with Kelvin Probe Microscopy

    Science.gov (United States)

    Castaneda, Chloe; Zaidi, Alyina; Moscatello, Jason; Aidala, Katherine

    We have developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in organic semiconductor devices. We investigate P3HT (full name) in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin probe microscopy to record the potential over time, we can record how the charge carriers respond to changing the backgate voltage while the source and drain electrodes are grounded. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the P3HT film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We compare P3HT transistors with different fabrication procedures that are expected to change the trap distribution: no silanization of the oxide and no annealing, silanization and no annealing, and both silanization and annealing. By incrementally stepping the gate voltage, we probe different trap depths. The recorded change in potential over time is best fit by a double exponential, suggesting two physical mechanisms involved in screening. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  3. Fractal spectrum of charge carriers in quasiperiodic graphene structures

    Energy Technology Data Exchange (ETDEWEB)

    Sena, S H R; Pereira Jr, J M; Farias, G A [Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, Campus do Pici, 60455-900 Fortaleza, CE (Brazil); Vasconcelos, M S [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil); Albuquerque, E L, E-mail: pereira@fisica.ufc.b, E-mail: eudenilson@gmail.co [Departamento de Biofisica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil)

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  4. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  5. Fractal spectrum of charge carriers in quasiperiodic graphene structures.

    Science.gov (United States)

    Sena, S H R; Pereira, J M; Farias, G A; Vasconcelos, M S; Albuquerque, E L

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  6. Phonon-assisted coherent control of injected carriers in indirect bandgap semiconductors

    Science.gov (United States)

    Rioux, Julien; Nastos, Fred; Sipe, John E.

    2007-03-01

    Charge and spin currents can be generated in direct semiconductors by quantum interference between one- and two-photon absorption. For semiconductors such as Si and Ge, optical injection of carriers over the indirect bandgap must be assisted by momentum transfer from phonon scattering. We consider the optical properties for such 1+2 photon processes in the presence of the electron-phonon interaction. The latter is modelled by acoustic deformation potential. Indirect transitions involve double Brillouin zone integrations, which are computed by a linearized tetrahedron method. We compare our results to those for bulk GaAs. M.J. Stevens, R.D.R. Bhat, A. Najmaie, H.M. van Driel, J.E. Sipe and A.L. Smirl, in Optics of Semiconductors and Their Nanostructures, edited by H. Kalt and M. Hetterich (Springer, Berlin, 2004), vol. 146 of Springer Series in Solid-State Sciences, p. 209.

  7. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    Science.gov (United States)

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  8. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  9. Acoustically regulated carrier injection into a single optically active quantum dot

    Science.gov (United States)

    Schülein, Florian J. R.; Müller, Kai; Bichler, Max; Koblmüller, Gregor; Finley, Jonathan J.; Wixforth, Achim; Krenner, Hubert J.

    2013-08-01

    We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral (X0) and negatively charged (X-) excitons. We identify underlying, characteristic formation pathways of both few-particle states in the time-domain experiments and show that both exciton species can be formed either with the optical pump or at later times by injection of single electrons and holes “surfing” the acoustic wave. All experimental observations are in excellent agreement with calculated electron and hole trajectories in the plane of the two-dimensional wetting layer which is dynamically modulated by the acoustically induced piezoelectric potentials. Taken together, our findings provide insight on both the onset of acoustoelectric transport of electrons and holes and their conversion into the optical domain after regulated injection into a single quantum dot emitter.

  10. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    Science.gov (United States)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  11. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NARCIS (Netherlands)

    Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; De Leeuw, D.M.; Michels, M.A.J.

    2005-01-01

    From a numerically exact solution of the Master equation for hoppingtransport in a disordered energy landscape with a Gaussian densityof states, we determine the dependence on temperature, carrier density, and electric field of the charge carrier mobility. Experimentalspace-charge limited currents i

  12. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    Science.gov (United States)

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells.

  13. Inhomogeneities in charge carrier transport properties of Cu(In,Ga)Se{sub 2} solar-cells

    Energy Technology Data Exchange (ETDEWEB)

    Nichterwitz, Melanie; Kaufmann, Christian; Schock, Hans-Werner; Unold, Thomas [Helmholtz-Zentrum Berlin (Germany); Caballero, Raquel [Universidad Autonoma de Madrid (Spain)

    2012-07-01

    In this study, electron beam induced current (EBIC) in the cross section configuration is used to characterize charge carrier transport in Cu(In,Ga)Se{sub 2} (CIGSe)/CdS/ZnO solar-cells. It is shown that charge carrier transport properties are (i) generation dependent and (ii) grain specific, i.e. spatially inhomogeneous. Within some grains of the CIGSe absorber layer, the collected short circuit current is reduced significantly for electron beam irradiation such that there is no generation at the heterojunction. Charge carrier transport is generation dependent in these grains for all used electron beam currents, i.e. generation densities (low injection). In other grains however, charge carrier transport is only generation dependent for the highest used electron beam current. In conjunction with numerical simulations, these results are used to derive a model for the electronic band diagram of the heterojunction region of the solar cell. It is based on the assumption of (i) a thin layer with a high density ({approx}10{sup 17} cm{sup -3}) of deep acceptor type defect states (p{sup +} layer) and a lowered valence band maximum between the CIGSe and the CdS layer and (ii) donor type interface states at the p{sup +} layer/CdS interface of some grains.

  14. Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser

    Institute of Scientific and Technical Information of China (English)

    Jialiang Jin; Lei Wang; Jianjun He

    2012-01-01

    Consecutive wavelength switching characteristics of a simple,compact,and digitally wavelength-switchable laser based on V-coupled cavities are reported.Wavelength switching through thermal and carrier injection effects is examined.Without using band gap engineering for the tuning section,26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects,respectively.The performances of these two tuning schemes are then compared.

  15. Organic/Organic Heterointerface Engineering to Boost Carrier Injection in OLEDs

    Science.gov (United States)

    Fathollahi, Mohammadreza; Ameri, Mohsen; Mohajerani, Ezeddin; Mehrparvar, Ebrahim; Babaei, Mohammadrasoul

    2017-02-01

    We investigate dynamic formation of nanosheet charge accumulations by heterointerface engineering in double injection layer (DIL) based organic light emitting diodes (OLEDs). Our experimental results show that the device performance is considerably improved for the DIL device as the result of heterointerface injection layer (HIIL) formation, in comparison to reference devices, namely, the current density is doubled and even quadrupled and the turn-on voltage is favorably halved, to 3.7 V, which is promising for simple small-molecule OLEDs. The simulation reveals the (i) formation of dynamic p-type doping (DPD) region which treats the quasi Fermi level at the organic/electrode interface, and (ii) formation of dynamic dipole layer (DDL) and the associated electric field at the organic/organic interface which accelerates the ejection of the carriers and their transference to the successive layer. HIIL formation proposes alternate scenarios for device design. For instance, no prerequisite for plasma treatment of transparent anode electrode, our freedom in varying the thicknesses of the organic layers between 10 nm and 60 nm for the first layer and between 6 nm and 24 nm for the second layer. The implications of the present work give insight into the dynamic phenomena in OLEDs and facilitates the development of their inexpensive fabrication for lighting applications.

  16. Organic/Organic Heterointerface Engineering to Boost Carrier Injection in OLEDs

    Science.gov (United States)

    Fathollahi, Mohammadreza; Ameri, Mohsen; Mohajerani, Ezeddin; Mehrparvar, Ebrahim; Babaei, Mohammadrasoul

    2017-01-01

    We investigate dynamic formation of nanosheet charge accumulations by heterointerface engineering in double injection layer (DIL) based organic light emitting diodes (OLEDs). Our experimental results show that the device performance is considerably improved for the DIL device as the result of heterointerface injection layer (HIIL) formation, in comparison to reference devices, namely, the current density is doubled and even quadrupled and the turn-on voltage is favorably halved, to 3.7 V, which is promising for simple small-molecule OLEDs. The simulation reveals the (i) formation of dynamic p-type doping (DPD) region which treats the quasi Fermi level at the organic/electrode interface, and (ii) formation of dynamic dipole layer (DDL) and the associated electric field at the organic/organic interface which accelerates the ejection of the carriers and their transference to the successive layer. HIIL formation proposes alternate scenarios for device design. For instance, no prerequisite for plasma treatment of transparent anode electrode, our freedom in varying the thicknesses of the organic layers between 10 nm and 60 nm for the first layer and between 6 nm and 24 nm for the second layer. The implications of the present work give insight into the dynamic phenomena in OLEDs and facilitates the development of their inexpensive fabrication for lighting applications. PMID:28218246

  17. Effect of Carrier Differences on Spin Polarized Injection into Organic and Inorganic Semiconductors

    Institute of Scientific and Technical Information of China (English)

    REN Jun-Feng; XIU Ming-Xia

    2008-01-01

    Spin polarized injection into organic and inorganic semiconductors are studied theoretically from the spin diffusion theory and Ohm's law, and the emphases are placed on the effect of the carrier differences on the current spin polarization. The mobility and the spin-Rip time of carriers in organic and inorganic semiconductors are different. From the calculation, it is found that current spin polarization at a ferromagnetic/organic interface is higher than that at a ferromagnetic/inorganic interface because of different carriers in them. Effects of the conductivity matching, the spin dependent interfacial resistances, and the balk spin polarization of the ferromagnetic layer on the spin polarized injection are also discussed.

  18. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  19. Ultrafast charge carrier relaxation and charge transfer processes in CdS/CdTe thin films.

    Science.gov (United States)

    Pandit, Bill; Dharmadasa, Ruvini; Dharmadasa, I M; Druffel, Thad; Liu, Jinjun

    2015-07-14

    Ultrafast transient absorption pump-probe spectroscopy (TAPPS) has been employed to investigate charge carrier relaxation in cadmium sulfide/cadmium telluride (CdS/CdTe) nanoparticle (NP)-based thin films and electron transfer (ET) processes between CdTe and CdS. Effects of post-growth annealing treatments to ET processes have been investigated by carrying out TAPPS experiments on three CdS/CdTe samples: as deposited, heat treated, and CdCl2 treated. Clear evidence of ET process in the treated thin films has been observed by comparing transient absorption (TA) spectra of CdS/CdTe thin films to those of CdS and CdTe. Quantitative comparison between ultrafast kinetics at different probe wavelengths unravels the ET processes and enables determination of its rate constants. Implication of the photoinduced dynamics to photovoltaic devices is discussed.

  20. A method for charging a test carrier and a test carrier

    DEFF Research Database (Denmark)

    2014-01-01

    A method of charging a substrate with a plurality of through-going bores and a charged substrate, where the substrate is charged with a liquid comprising particles in a concentration resulting in a high percentage of bores charged with liquid with only a single particle therein....

  1. Charge-Carrier Transport in Thin Film Solar Cells: New Formulation

    OpenAIRE

    2011-01-01

    Solar cells rely on photogeneration of charge carriers in p-n junctions and their transport and subsequent recombination in the quasineutral regions. A number of basic issues concerning the physics of the operation of solar cells still remain obscure. This paper discusses some of those unsolved basic problems. In conventional solar cells, recombination of photogenerated charge carriers plays a major limiting role in the cell efficiency. High quality thin-film solar cells may overcome this lim...

  2. Unified description of charge-carrier mobilities in disordered semiconducting polymers

    NARCIS (Netherlands)

    Pasveer, WF; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, PA; Blom, PWM; de Leeuw, DM; Michels, MAJ

    2005-01-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in d

  3. Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

    Energy Technology Data Exchange (ETDEWEB)

    Berrada, Salim, E-mail: s.berrada@insa.ueuromed.org; Bescond, Marc, E-mail: marc.bescond@im2np.fr; Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel [IM2NP UMR CNRS 7334, Aix-Marseille Université, Technopôle de Château Gombert, 60 Rue Frédéric Joliot Curie, Bâtiment Néel,13453 Marseille (France)

    2015-10-12

    This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

  4. Increase in the mobility of photogenerated positive charge carriers in polythiophene.

    Science.gov (United States)

    Saeki, Akinori; Seki, Shu; Koizumi, Yoshiko; Sunagawa, Takeyoshi; Ushida, Kiminori; Tagawa, Seiichi

    2005-05-26

    We report the increase in the mobility of charge carriers in regioregular poly 3-hexyl thiophene (RR-P3HT) films by mixing them with tetracyanoethylene (TCNE), which is examined by in situ time-resolved microwave conductivity (TRMC) and transient optical spectroscopy (TOS). TCNE acts not only as an electron acceptor which increases the number of charge carriers on photoexposure but also as a functional additive which enhances the mobility of the charge carriers. This conclusion was deduced from the results of fluorescence quenching, transient optical absorption and photobleaching, and comparison of the TRMC signal with the TOS signal. The combination of the TRMC and TOS techniques represents a comprehensive and fully experimental approach to the determination of the intrinsic carrier mobility in conjugated polymers.

  5. Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons.

    Science.gov (United States)

    Natterer, Fabian D; Zhao, Yue; Wyrick, Jonathan; Chan, Yang-Hao; Ruan, Wen-Ying; Chou, Mei-Yin; Watanabe, Kenji; Taniguchi, Takashi; Zhitenev, Nikolai B; Stroscio, Joseph A

    2015-06-19

    The observation of phonons in graphene by inelastic electron tunneling spectroscopy has been met with limited success in previous measurements arising from weak signals and other spectral features which inhibit a clear distinction between phonons and miscellaneous excitations. Utilizing a back-gated graphene device that allows adjusting the global charge carrier density, we introduce an averaging method where individual tunneling spectra at varying charge carrier density are combined into one representative spectrum. This method improves the signal for inelastic transitions while it suppresses dispersive spectral features. We thereby map the total graphene phonon density of states, in good agreement with density functional calculations. Unexpectedly, an abrupt change in the phonon intensity is observed when the graphene charge carrier type is switched through a variation of the back-gate electrode potential. This sudden variation in phonon intensity is asymmetric in the carrier type, depending on the sign of the tunneling bias.

  6. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...... by a factor of five. Charge trapping and space charge formation were modified by the introduction of titanium dioxide...

  7. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    Science.gov (United States)

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V

  8. Charge-carrier dynamics in hybrid metal halide perovskites (Conference Presentation)

    Science.gov (United States)

    Milot, Rebecca L.; Rehman, Waqaas; Eperon, Giles E.; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2016-09-01

    Hybrid metal halide perovskites are attractive components for many optoelectronic applications due to a combination of their superior charge transport properties and relative ease of fabrication. A complete understanding of the nature of charge transport in these materials is therefore essential for current and future device development. We have evaluated two systems - the standard perovskite methylammonium lead triiodide (CH3NH3PbI3) and a series of mixed-iodide/bromide formamidinium lead perovskites - in an effort to determine what effect structural and chemical composition have on optoelectronic properties including mobility, charge-carrier recombination dynamics, and charge-carrier diffusion length. The photoconductivity in thin films of CH3NH3PbI3was investigated from 8 K to 370 K across three structural phases [1]. While the monomolecular charge-carrier recombination rate was found to increase with rising temperature indicating a mechanism dominated by ionized impurity mediated recombination, the bimolecular rate constant decreased with rising temperature as charge-carrier mobility declined. The Auger rate constant was highly phase specific, suggesting a strong dependence on electronic band structure. For the mixed-halide formamidinuim lead bromide-iodide perovskites, HC(NH2)2Pb(BryI1-y)3, bimolecular and Auger charge-carrier recombination rate constants strongly correlated with bromide content, which indicated a link with electronic structure [2]. Although HC(NH2)2PbBr3 and HC(NH2)2PbI3 exhibited high charge-carrier mobilities and diffusion lengths exceeding 1 μm, mobilities for mixed Br/I perovskites were all lower as a result of crystalline phase disorder.

  9. Photoconductivity and Charge-Carrier Photogeneration in Photorefractive Polymers

    NARCIS (Netherlands)

    Däubler, Thomas K.; Kulikovsky, Lazar; Neher, Dieter; Cimrová, Vera; Hummelen, J.C.; Mecher, Erwin; Bittner, Reinhard; Meerholz, Klaus; Lawson, M.; Meerholz, Klaus

    2002-01-01

    We have studied photogeneration, transport, trapping and recombination as the governing mechanisms for the saturation field strength and the time response of the photorefractive (PR) effect in PVK-based PR materials, utilizing xerographic discharge and photoconductivity experiments. Both the charge

  10. Self-healing polysaccharide-based hydrogels as injectable carriers for neural stem cells

    Science.gov (United States)

    Wei, Zhao; Zhao, Jingyi; Chen, Yong Mei; Zhang, Pengbo; Zhang, Qiqing

    2016-11-01

    Self-healing injectable hydrogels can be formulated as three-dimensional carriers for the treatment of neurological diseases with desirable advantages, such as avoiding the potential risks of cell loss during injection, protecting cells from the shearing force of injection. However, the demands for biocompatible self-healing injectable hydrogels to meet above requirements and to promote the differentiation of neural stem cells (NSCs) into neurons remain a challenge. Herein, we developed a biocompatible self-healing polysaccharide-based hydrogel system as a novel injectable carrier for the delivery of NSCs. N-carboxyethyl chitosan (CEC) and oxidized sodium alginate (OSA) are the main backbones of the hydrogel networks, denoted as CEC-l-OSA hydrogel (“l” means “linked-by”). Owing to the dynamic imine cross-links formed by a Schiff reaction between amino groups on CEC and aldehyde groups on OSA, the hydrogel possesses the ability to self-heal into a integrity after being injected from needles under physiological conditions. The CEC-l-OSA hydrogel in which the stiffness mimicking nature brain tissues (100~1000 Pa) can be finely tuned to support the proliferation and neuronal differentiation of NSCs. The multi-functional, injectable, and self-healing CEC-l-OSA hydrogels hold great promises for NSC transplantation and further treatment of neurological diseases.

  11. Charge and excitation dynamics in semiconducting polymer layers doped with emitters and charge carrier traps; Ladungstraeger- und Anregungsdynamik in halbleitenden Polymerschichten mit eingemischten Emittern und Ladungstraegerfallen

    Energy Technology Data Exchange (ETDEWEB)

    Jaiser, F.

    2006-06-15

    Light-emitting diodes generate light from the recombination of injected charge carriers. This can be obtained in inorganic materials. Here, it is necessary to produce highly ordered crystalline structures that determine the properties of the device. Another possibility is the utilization of organic molecules and polymers. Based on the versatile organic chemistry, it is possible to tune the properties of the semiconducting polymers already during synthesis. In addition, semiconducting polymers are mechanically flexible. Thus, it is possible to construct flexible, large-area light sources and displays. The first light-emitting diode using a polymer emitter was presented in 1990. Since then, this field of research has grown rapidly up to the point where first products are commercially available. It has become clear that the properties of polymer light-emitting diodes such as color and efficiency can be improved by incorporating multiple components inside the active layer. At the same time, this gives rise to new interactions between these components. While components are often added either to improve the charge transport or to change the emission, it has to made sure that other processes are not influenced in a negative manner. This work investigates some of these interactions and describes them with simple physical models. First, blue light-emitting diodes based on polyfluorene are analyzed. This polymer is an efficient emitter, but it is susceptible to the formation of chemical defects that can not be suppressed completely. These defects form electron traps, but their effect can be compensated by the addition of hole traps. The underlying process, namely the changed charge carrier balance, is explained. In the following, blend systems with dendronized emitters that form electron traps are investigated. The different influence of the insulating shell on the charge and energy transfer between polymer host and the emissive core of the dendrimers is examined. In the

  12. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    Science.gov (United States)

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; Moisan, Camille; Larramona, Gerardo; Dennler, Gilles; Handwerg, Martin; Fischer, Saskia F.; Eichberger, Rainer; Unold, Thomas

    2016-11-01

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V-1 s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

  13. Vertical charge-carrier transport in Si nanocrystal/SiO2 multilayer structures.

    Science.gov (United States)

    Osinniy, V; Lysgaard, S; Kolkovsky, Vl; Pankratov, V; Nylandsted Larsen, A

    2009-05-13

    Charge-carrier transport in multilayer structures of Si nanocrystals (NCs) embedded in a SiO(2) matrix grown by magnetron sputtering has been investigated. The presence of two types of Si NCs with different diameters after post-growth annealing is concluded from transmission-electron microscopy and photoluminescence measurements. Based on the electric field and temperature dependences of capacitance and resistivity, it is established that the carrier transport is best described by a combination of phonon-assisted and direct tunneling mechanisms. Poole-Frenkel tunneling seems to be a less suitable mechanism to explain the vertical carrier transport due to the very high values of refractive indices obtained within this model. The possibility to more effectively collect charge carriers generated by light in structures having Si NCs of different size is discussed.

  14. Probing charge transfer and hot carrier dynamics in organic solar cells with terahertz spectroscopy

    Science.gov (United States)

    Cunningham, Paul D.; Lane, Paul A.; Melinger, Joseph S.; Esenturk, Okan; Heilweil, Edwin J.

    2016-04-01

    Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C60) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C60 were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C60, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C60 followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C60, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

  15. Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

    Science.gov (United States)

    Edley, Michael

    Photovoltaic energy is a clean and renewable source of electricity; however, it faces resistance to widespread use due to cost. Nanostructuring decouples constraints related to light absorption and charge separation, potentially reducing cost by allowing a wider variety of processing techniques and materials to be used. However, the large interfacial areas also cause an increased dark current which negatively affects cell efficiency. This work focuses on extremely thin absorber (ETA) solar cells that used a ZnO nanowire array as a scaffold for an extremely thin CdSe absorber layer. Photoexcited electrons generated in the CdSe absorber are transferred to the ZnO layer, while photogenerated holes are transferred to the liquid electrolyte. The transfer of photoexcited carriers to their transport layer competes with bulk recombination in the absorber layer. After charge separation, transport of charge carriers to their respective contacts must occur faster than interfacial recombination for efficient collection. Charge separation and collection depend sensitively on the dimensions of the materials as well as their interfaces. We demonstrated that an optimal absorber thickness can balance light absorption and charge separation. By treating the ZnO/CdSe interface with a CdS buffer layer, we were able to improve the Voc and fill factor, increasing the ETA cell's efficiency from 0.53% to 1.34%, which is higher than that achievable using planar films of the same material. We have gained additional insight into designing ETA cells through the use of dynamic measurements. Ultrafast transient absorption spectroscopy revealed that characteristic times for electron injection from CdSe to ZnO are less than 1 ps. Electron injection is rapid compared to the 2 ns bulk lifetime in CdSe. Optoelectronic measurements such as transient photocurrent/photovoltage and electrochemical impedance spectroscopy were applied to study the processes of charge transport and interfacial recombination

  16. Charge carrier photogeneration in conjugated polymer PhPPV/R6G composite system

    Institute of Scientific and Technical Information of China (English)

    WANG Huan; TIAN Wenjing

    2005-01-01

    The spectral and polarity dependence of the quantum yield of charge carrier photo-generation was studied by steady-state photocurrent measurement in a single layer PhPPV film, double layer film of PhPPV and R6G and doped film of PhPPV with R6G. The intrinsic and extrinsic charge carrier photogeneration was observed. The result indicates that the quantum efficiency of the double layer device is higher than that of single layer device under reverse bias, but it is opposite under forward bias. The yield of charge carrier photogeneration of the doped film is higher than that of the other two films at both forward and reverse bias because of the increased interface area between the electron donor and acceptor.

  17. Spin-dependent charge carrier recombination in PCBM

    Science.gov (United States)

    Morishita, Hiroki; Baker, William; Waters, David; Baarda, Rachel; Lupton, John; Boehme, Christoph; Utah Spin Electronics Group Collaboration; Lupton Group Collaboration

    2013-03-01

    We present room temperature pulsed electrically detected magnetic resonance (pEDMR) measurements on [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) (electron acceptor) thin film unipolar and bipolar devices. Our study aimed at identifying the dominating spin-dependent transport and recombination processes therein. Experimentally, the devices were operated under a constant positive bias, and the resultant transient current response was then monitored after the application of a short resonant microwave pulse excitation. The measurements did not reveal any observable signal for unipolar electron devices which suggests that spin-dependent transport mechanisms are not dominant in PCBM. However, under bipolar injection, at least two pronounced spin-dependent signals were detected whose magnitudes increased as the devices degraded upon exposure to air. Electrical detection of spin-Rabi beat oscillation revealed that one of these two signals is due to weakly coupled pairs of spins with s =1/2. We therefore attribute this signal to electron-hole recombination. This observation shows that while PCBM is a poor hole conductor, hole injection can be significant.

  18. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge.

    Science.gov (United States)

    Arzani, Gelareh; Haeri, Azadeh; Daeihamed, Marjan; Bakhtiari-Kaboutaraki, Hamid; Dadashzadeh, Simin

    2015-01-01

    Carvedilol (CRV) is an antihypertensive drug with both alpha and beta receptor blocking activity used to preclude angina and cardiac arrhythmias. To overcome the low, variable oral bioavailability of CRV, niosomal formulations were prepared and characterized: plain niosomes (without bile salts), bile salt-enriched niosomes (bilosomes containing various percentages of sodium cholate or sodium taurocholate), and charged niosomes (negative, containing dicetyl phosphate and positive, containing hexadecyl trimethyl ammonium bromide). All formulations were characterized in terms of encapsulation efficiency, size, zeta potential, release profile, stability, and morphology. Various formulations were administered orally to ten groups of Wistar rats (n=6 per group). The plasma levels of CRV were measured by a validated high-performance liquid chromatography (HPLC) method and pharmacokinetic properties of different formulations were characterized. Contribution of lymphatic transport to the oral bioavailability of niosomes was also investigated using a chylomicron flow-blocking approach. Of the bile salt-enriched vesicles examined, bilosomes containing 20% sodium cholate (F2) and 30% sodium taurocholate (F5) appeared to give the greatest enhancement of intestinal absorption. The relative bioavailability of F2 and F5 formulations to the suspension was estimated to be 1.84 and 1.64, respectively. With regard to charged niosomes, the peak plasma concentrations (Cmax) of CRV for positively (F7) and negatively charged formulations (F10) were approximately 2.3- and 1.7-fold higher than after a suspension. Bioavailability studies also revealed a significant increase in extent of drug absorption from charged vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway

  19. Charge transfer polarisation wave and carrier pairing in the high T(sub c) copper oxides

    Science.gov (United States)

    Chakraverty, B. K.

    1990-01-01

    The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.

  20. Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene)

    OpenAIRE

    Tanase, C; Blom, PWM; De Leeuw, DM; de Meijer, EJ

    2004-01-01

    The hole transport in various poly(p-phenylene vinylene) (PPV) derivatives has been investigated in field-effect transistors (FETs) and light-emitting diodes (LEDs) as a function of temperature and applied bias. The discrepancy between the experimental hole mobilities extracted from FETs and LEDs based on a single disordered polymeric semiconductor originates from the strong dependence of the hole mobility on the charge carrier density. The microscopic charge transport parameters are directly...

  1. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  2. Home built equipment for measuring Hall coefficient and charge carrier concentration, mobility and resistivity

    DEFF Research Database (Denmark)

    Borup, Kasper Andersen; Christensen, Mogens; Blichfeld, Anders Bank;

    2011-01-01

    We present here a home built setup for measuring the specific resistivity, hall coefficient, and charge carrier concentration and mobility at elevated temperatures. The system is optimized for measurements of samples ranging between doped semiconductors and high resistivity metals and uses the van...

  3. Analysis of Charge Carrier Transport in Organic Photovoltaic Thin Films and Nanoparticle Assemblies

    Science.gov (United States)

    Han, Xu; Maroudas, Dimitrios

    2014-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological charge carrier transport models. These transient drift-diffusion-reaction models describe electron and hole transport and their trapping, detrapping, and recombination self-consistently with Poisson's equation for the electric field in the active layer. We predict transient currents in devices with active layers composed of P3HT, PCBM, and PBTDV polymers, as well as donor-acceptor blends. The propensity of the material to generate charge, zero-field carrier mobilities, as well as trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental data of photocurrent evolution. We have investigated effects of material structure and morphology by comparing the fitting outcomes for active layers consisting of both thin films and nanoparticle assemblies. We have also analyzed the effect on charge carrier transport of nanoparticle surface characteristics, as well as of thermal annealing of both thin-film and nanoparticle-assembly active layers. The model predictions provide valuable input toward synthesis of new nanoparticle assemblies that lead to improved OPV device performance.

  4. Analytical and numerical studies of photo-injected charge transport in molecularly-doped polymers

    Science.gov (United States)

    Roy Chowdhury, Amrita

    The mobility of photo-injected charge carriers in molecularly-doped polymers (MDPs) exhibits a commonly observed, and nearly universal Poole-Frenkel field dependence, mu exp√(beta0E), that has been shown to arise from the correlated Gaussian energy distribution of transport sites encountered by charges undergoing hopping transport through the material. Analytical and numerical studies of photo-injected charge transport in these materials are presented here with an attempt to understand how specific features of the various models developed to describe these systems depend on the microscopic parameters that define them. Specifically, previously published time-of-flight mobility data for the molecularly doped polymer 30% DEH:PC (polycarbonate doped with 30 wt.% aromatic hydrazone DEH) is compared with direct analytical and numerical predictions of five disorder-based models, the Gaussian disorder model (GDM) of Bassler, and four correlated disorder models introduced by Novikov, et al., and by Parris, et al. In these numerical studies, disorder parameters describing each model were varied from reasonable starting conditions, in order to give the best overall fit. The uncorrelated GDM describes the Poole-Frenkel field dependence of the mobility only at very high fields, but fails for fields lower than about 64 V/mum. The correlated disorder models with small amounts of geometrical disorder do a good over-all job of reproducing a robust Poole-Frenkel field dependence, with correlated disorder theories that employ polaron transition rates showing qualitatively better agreement with experiment than those that employ Miller-Abrahams rates. In a separate study, the heuristic treatment of spatial or geometric disorder incorporated in existing theories is critiqued, and a randomly-diluted lattice gas model is developed to describe the spatial disorder of the transport sites in a more realistic way.

  5. Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes.

    Science.gov (United States)

    Nguyen, Hieu Pham Trung; Zhang, Shaofei; Connie, Ashfiqua T; Kibria, Md Golam; Wang, Qi; Shih, Ishiang; Mi, Zetian

    2013-01-01

    We have examined the carrier injection process of axial nanowire light-emitting diode (LED) structures and identified that poor carrier injection efficiency, due to the large surface recombination, is the primary cause for the extremely low output power of phosphor-free nanowire white LEDs. We have further developed InGaN/GaN/AlGaN dot-in-a-wire core-shell white LEDs on Si substrate, which can break the carrier injection efficiency bottleneck, leading to a massive enhancement in the output power. At room temperature, the devices can exhibit an output power of ~1.5 mW, which is more than 2 orders of magnitude stronger than nanowire LEDs without shell coverage. Additionally, such phosphor-free nanowire white LEDs can deliver an unprecedentedly high color rendering index of ~92-98 in both the warm and cool white regions, with the color rendering capability approaching that of an ideal light source, i.e. a blackbody.

  6. Charge Carrier Hopping Dynamics in Homogeneously Broadened PbS Quantum Dot Solids.

    Science.gov (United States)

    Gilmore, Rachel H; Lee, Elizabeth M Y; Weidman, Mark C; Willard, Adam P; Tisdale, William A

    2017-02-08

    Energetic disorder in quantum dot solids adversely impacts charge carrier transport in quantum dot solar cells and electronic devices. Here, we use ultrafast transient absorption spectroscopy to show that homogeneously broadened PbS quantum dot arrays (σhom(2):σinh(2) > 19:1, σinh/kBT quantum dot batches are sufficiently monodisperse (δ ≲ 3.3%). The homogeneous line width is found to be an inverse function of quantum dot size, monotonically increasing from ∼25 meV for the largest quantum dots (5.8 nm diameter/0.92 eV energy) to ∼55 meV for the smallest (4.1 nm/1.3 eV energy). Furthermore, we show that intrinsic charge carrier hopping rates are faster for smaller quantum dots. This finding is the opposite of the mobility trend commonly observed in device measurements but is consistent with theoretical predictions. Fitting our data to a kinetic Monte Carlo model, we extract charge carrier hopping times ranging from 80 ps for the smallest quantum dots to over 1 ns for the largest, with the same ethanethiol ligand treatment. Additionally, we make the surprising observation that, in slightly polydisperse (δ ≲ 4%) quantum dot solids, structural disorder has a greater impact than energetic disorder in inhibiting charge carrier transport. These findings emphasize how small improvements in batch size dispersity can have a dramatic impact on intrinsic charge carrier hopping behavior and will stimulate further improvements in quantum dot device performance.

  7. High charge carrier mobility and efficient charge separation in highly soluble perylenetetracarboxyl-diimides

    NARCIS (Netherlands)

    Günbaş, D.D.; Xue, C.; Patwardhan,S.; Fravventura, M.C.; Zhang, H.; Jager, W.F.; Sudhölter, E.J.R.; Laurens D. A.; Siebbeles, L.D.A.; Savenije, T.J.; Jin, S.; Grozema, F.C.

    2014-01-01

    In this communication we report on the synthesis and charge mobility of highly soluble perylenebisimid derivatives.We show that introduction of alkylester side chains results in compounds combining a high solubility with charge mobilities up to 0.22 cm2 V_1 s_1. These materials are therefore interes

  8. Strontium Insertion in Methylammonium Lead Iodide: Long Charge Carrier Lifetime and High Fill-Factor Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-del-Rey, Daniel [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain; Forgács, Dávid [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain; Hutter, Eline M. [Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9 2629 HZ Delft The Netherlands; Savenije, Tom J. [Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9 2629 HZ Delft The Netherlands; Nordlund, Dennis [Stanford Linear Accelerator Campus, Stanford Synchrotron Laboratory, Menlo Park CA 94025 USA; Schulz, Philip [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Parkway Golden CO 80401 USA; Berry, Joseph J. [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Parkway Golden CO 80401 USA; Sessolo, Michele [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain; Bolink, Henk J. [Instituto de Ciencia Molecular, Universidad de Valencia, C/J. Beltran 2 46980 Paterna Spain

    2016-09-22

    The addition of Sr2+ in CH3NH3PbI3 perovskite films enhances the charge carrier collection efficiency of solar cells leading to very high fill factors, up to 85%. The charge carrier lifetime of Sr2+-containing perovskites is in excess of 40 us, longer than those reported for perovskite single crystals.

  9. Achieving a stable time response in polymeric radiation sensors under charge injection by X-rays.

    Science.gov (United States)

    Intaniwet, Akarin; Mills, Christopher A; Sellin, Paul J; Shkunov, Maxim; Keddie, Joseph L

    2010-06-01

    Existing inorganic materials for radiation sensors suffer from several drawbacks, including their inability to cover large curved areas, lack of tissue-equivalence, toxicity, and mechanical inflexibility. As an alternative to inorganics, poly(triarylamine) (PTAA) diodes have been evaluated for their suitability for detecting radiation via the direct creation of X-ray induced photocurrents. A single layer of PTAA is deposited on indium tin oxide (ITO) substrates, with top electrodes selected from Al, Au, Ni, and Pd. The choice of metal electrode has a pronounced effect on the performance of the device; there is a direct correlation between the diode rectification factor and the metal-PTAA barrier height. A diode with an Al contact shows the highest quality of rectifying junction, and it produces a high X-ray photocurrent (several nA) that is stable during continuous exposure to 50 kV Mo Kalpha X-radiation over long time scales, combined with a high signal-to-noise ratio with fast response times of less than 0.25 s. Diodes with a low band gap, 'Ohmic' contact, such as ITO/PTAA/Au, show a slow transient response. This result can be explained by the build-up of space charge at the metal-PTAA interface, caused by a high level of charge injection due to X-ray-induced carriers. These data provide new insights into the optimum selection of metals for Schottky contacts on organic materials, with wider applications in light sensors and photovoltaic devices.

  10. Manipulating charge density waves in 1 T -TaS2 by charge-carrier doping: A first-principles investigation

    Science.gov (United States)

    Shao, D. F.; Xiao, R. C.; Lu, W. J.; Lv, H. Y.; Li, J. Y.; Zhu, X. B.; Sun, Y. P.

    2016-09-01

    The transition-metal dichalcogenide 1 T -TaS2 exhibits a rich set of charge-density-wave (CDW) orders. Recent investigations suggested that using light or an electric field can manipulate the commensurate CDW (CCDW) ground state. Such manipulations are considered to be determined by charge-carrier doping. Here we use first-principles calculations to simulate the carrier-doping effect on the CCDW in 1 T -TaS2 . We investigate the charge-doping effects on the electronic structures and phonon instabilities of the 1 T structure, and we analyze the doping-induced energy and distortion ratio variations in the CCDW structure. We found that both in bulk and monolayer 1 T -TaS2 , the CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric-field-induced hole doping increases the energy of the CCDW, so that the system transforms to a nearly commensurate CDW or a similar metastable state. On the other hand, even though the CCDW distortion is more stable upon in-plane electric-field-induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from the CCDW to a nearly commensurate CDW or a similar metastable state. We also estimate that hole doping can introduce potential superconductivity with a Tc of 6-7 K. Controllable switching of different states such as a CCDW/Mott insulating state, a metallic state, and even a superconducting state can be realized in 1 T -TaS2 . As a result, this material may have very promising applications in future electronic devices.

  11. Fibrin Gel as an Injectable Biodegradable Scaffold and Cell Carrier for Tissue Engineering

    Directory of Open Access Journals (Sweden)

    Yuting Li

    2015-01-01

    Full Text Available Due to the increasing needs for organ transplantation and a universal shortage of donated tissues, tissue engineering emerges as a useful approach to engineer functional tissues. Although different synthetic materials have been used to fabricate tissue engineering scaffolds, they have many limitations such as the biocompatibility concerns, the inability to support cell attachment, and undesirable degradation rate. Fibrin gel, a biopolymeric material, provides numerous advantages over synthetic materials in functioning as a tissue engineering scaffold and a cell carrier. Fibrin gel exhibits excellent biocompatibility, promotes cell attachment, and can degrade in a controllable manner. Additionally, fibrin gel mimics the natural blood-clotting process and self-assembles into a polymer network. The ability for fibrin to cure in situ has been exploited to develop injectable scaffolds for the repair of damaged cardiac and cartilage tissues. Additionally, fibrin gel has been utilized as a cell carrier to protect cells from the forces during the application and cell delivery processes while enhancing the cell viability and tissue regeneration. Here, we review the recent advancement in developing fibrin-based biomaterials for the development of injectable tissue engineering scaffold and cell carriers.

  12. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  13. Charge Carrier Transport and Photogeneration in P3HT:PCBM Photovoltaic Blends

    KAUST Repository

    Laquai, Frederic

    2015-05-03

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano­fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10−4 cm2 V−1 s−1 after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea­sured in P3HT:PCBM photovoltaic devices.

  14. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhenrui [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)]. E-mail: yinaoep@yahoo.mx; Aceves, Mariano [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico); Carrillo, Jesus [CIDS, BUAP, Puebla, Pue. (Mexico); Lopez-Estopier, Rosa [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)

    2006-12-05

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V {sub T}. When the applied voltage is smaller than V {sub T}, the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V {sub T}, the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained.

  15. Plasmon-enhanced charge carrier generation in organic photovoltaic films using silver nanoprisms.

    Science.gov (United States)

    Kulkarni, Abhishek P; Noone, Kevin M; Munechika, Keiko; Guyer, Samuel R; Ginger, David S

    2010-04-14

    We use photoinduced absorption spectroscopy to measure long-lived photogenerated charge carriers in optically thin donor/acceptor conjugated polymer blend films near plasmon-resonant silver nanoprisms. We measure up to 3 times more charge generation, as judged by the magnitude of the polaron absorption signal, in 35 nm thin blend films of poly(3-hexylthiophene)/phenyl-C(61)-butyric acid methyl ester on top of films of silver nanoprisms (approximately 40-100 nm edge length). We find that the polaron yields increase linearly with the total sample extinction. These excitation enhancements could in principle be used to increase photocurrents in thin organic solar cells.

  16. Towards high charge carrier mobilities by rational design of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  17. Theoretical modeling of the terahertz response of ultrafast photoexcited charge carriers in graphene

    Science.gov (United States)

    Rustagi, Avinash; Stanton, Christopher J.

    2014-03-01

    We have formulated a semi-classical model to capture the terahertz response of photoexcited charge carriers in graphene. The model involves the time evolution of the initial carrier distribution function excited by a femtosecond laser pulse by solving the Boltzmann equation within the relaxation time approximation in presence of an in-plane DC electric field. We solve for the time dependent average velocity using the distribution function obtained from the Boltzmann equation. The time derivative of this average velocity is proportional to the terahertz signal measured in experiments. We also consider the contribution of virtual carriers to the terahertz signal. This model can also be applied to systems with a gapped graphene-like dispersion. Supported by NSF through grant OISE-0968405.

  18. Explicitly Solvable Model of the Charge Carriers' Phenomena in Isotropic Conducting Crystals

    Science.gov (United States)

    Budzak, Yaroslav S.; Wacławski, Tadeusz

    2017-01-01

    In this paper, a theoretical analysis of the kinetic properties of the isotropic conducting crystals is presented. The general formulas for these kinetic properties are expressed in terms of the Fermi integrals. These integrals were obtained using methods of statistical ensembles with varying number of particles and the Gibbs's grand canonical distribution. The determination of the scattering function and the exploration of its relation with the mobility of the current carriers inside these crystals have been made. Together with the results of theoretical analysis of the scattering function and its relation with the current carriers' mobility, these formulas constitute the mathematical model of the charge carriers' transport phenomena in conducting crystals (where a non-parabolic energy spectrum is described by Kane's formula) and provide algorithms for the calculation of these properties.

  19. The thermoballistic transport model a novel approach to charge carrier transport in semiconductors

    CERN Document Server

    Lipperheide, Reinhard

    2014-01-01

    The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detai...

  20. Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films

    Institute of Scientific and Technical Information of China (English)

    ZHOU Yan-Wen; WU Fa-Yu; ZHENG Chun-Yan

    2011-01-01

    We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory.%We examine the structures,cut-off points of transmittance spectra and electric properties of undoped ZnO,SnO2 and CdO films by scanning electron microscopy,x-ray diffraction,spectrophotometer and Hall-effect measurements,respectively.The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum.The structures and properties of the as-deposited films are compared with those of the annealed one.We try to explain the behaviour of charge carriers based on the semiconductor physics Many studies about transparent conductive oxide (TCO) films have focused on the effects of deposition techniques,post-annealing parameters and dopants on the optical and electrical properties of the films.[1-11] It is believed that the microstructure and the charge carrier are the two key factors for the control of the electrical properties of TCO films.The integration of the crystals,which normally can be improved by post annealing treatment,may affect the mobility of charge carriers and hence the electrical properties of TCO films.

  1. An atomic switch of electron propagation on Ge (001) by tunneling carrier injection

    Science.gov (United States)

    Komori, Fumio

    2008-03-01

    Reversible switching of electronic conduction through atom manipulation is one of the important subjects of nanoscience. However, different conducting pathways were not clearly observed with atomic resolution. We have demonstrated the correlation between the change of surface atomic position by tunneling carrier injection and that of the reflection of one-dimensional (1D) surface-state electrons on the Ge (001) surface with a low density of heterogeneous Sn-Ge dimers. [1] On the clean Ge(001) surface, two adjacent atoms form a buckled dimer, and the buckling orientation of the Ge dimer can be locally and reversibly controlled by carrier injection to the surface from the STM tip. [2] The unoccupied surface &*circ;-electron behaves like a 1D free electron along the Ge dimer row. When Sn atoms are deposited on the clean Ge(001) surface at room temperature, buckled dimers originating from the Sn atoms are formed at the Ge dimer position in the surface. [3] An atomic switch is realized for the &*circ; electrons in the Ge dimer- row direction by injection carriers to reversibly flip the buckling orientation of a single Sn-Ge dimer in the dimer row. When the Sn atom of the heterogeneous dimer is at the lower position, the 1D electrons are reflected and a standing wave of this state is observed. Whereas, when it is at the upper position, the 1D electrons pass through the heterogeneous dimer, and no standing wave is observed. In this state, the lower atom of the dimer is Ge, and the &*circ; state at the dimer is little different from that of the Ge-Ge dimers. [1] K. Tomatsu, K. Nakatsuji, T. Iimori, Y. Takagi, H. Kusuhara, A. Ishii, F. Komori; Science 315, 1696, 2007. [2] Y. Takagi, Y. Yoshimoto, K. Nakatsuji, F. Komori; Surf. Sci. 559, 1, 2004. [3] K. Tomatsu, K. Nakatsuji, T. Iimori, F. Komori; Surf. Sci. 601, 1736, 2007.

  2. Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

    2014-04-15

    Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced

  3. The effect of oxidation on charge carrier motion in PbS quantum dot thin films studied with Kelvin Probe Microscopy

    Science.gov (United States)

    Nguyen Hoang, Lan Phuong; Williams, Pheona; Moscatello, Jason; Aidala, Kathy; Aidala Group Team

    We developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in thin film devices. We investigate the effects of oxidation on thin films of Lead Sulfide (PbS) quantum dots with tetrabutyl-ammonium-iodide (TBAI) ligands in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin Probe Force Microscopy (KPFM) to measure the potential over time, we can record how the charge carriers respond to changing the backgate voltage with grounded source and drain electrodes. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the PbS film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We probe these trapped holes by applying different gate voltages and recording the change in potential at the surface. There are mixed reports about the effect of air exposure on thin films of PbS quantum dots, with initial exposure appearing to be beneficial to device characteristics. We study the change in current, mobility, and charge injection and extraction as measured by KPFM over hours and days of exposure to air. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  4. Measurement of the Charge Carrier Mobility in MEH-PPV and MEH-PPV-POSS Organic Semiconductor Films

    Science.gov (United States)

    Romanov, I. V.; Voitsekhovskii, A. V.; Dyagterenko, K. M.; Kopylova, T. N.; Kokhanenko, A. P.; Nikonova, E. N.

    2015-03-01

    The values of the charge carrier mobility in organic semiconductor materials (MEH-PPV, MEH-PPV-POSS) are obtained on the basis of an analysis of the relaxation curves of transient electroluminescence in organic light-emitting diodes (OLEDs). The data on the mobility of charge carriers are analyzed according to the Poole-Frenkel model using the dependences of the charge carrier mobility on the electric field. Physical interpretation of the transport phenomena in OLED structures based on MEH-PPV and MEH-PPV-POSS is given.

  5. Charge carrier trapping into mobile, ionic defects in nanoporous ultra-low-k dielectric materials

    Science.gov (United States)

    Plawsky, Joel; Borja, Juan; Lu, Toh-Ming; Gill, William

    2014-03-01

    Reliability and robustness of low-k materials for advanced interconnects has become a major challenge for the continuous down-scaling of silicon semiconductor devices. Metal catalyzed time dependent breakdown (TDDB) is a major force preventing the integration of sub-32nm process technology nodes. We investigate how ionic species can become trapping centers (mobile defects) for charge carriers. A mechanism for describing and quantifying the trapping of charge carriers into mobile ions under bias and temperature stress is presented and experimentally investigated. The dynamics of trapping into ionic centers are severely impacted by temperature and species mass transport. After extended bias and temperature stress, the magnitude of charge trapping into ionic centers decreases asymptotically. Various processes such as the reduction of ionic species, moisture outgassing, and the inhibition of ionic drift via the distortion of local fields were investigated as possible cause for the reduction in charge trapping. Simulations suggest that built-in fields reduce the effect of an externally applied field in directing ionic drift, which can lead to the inhibition of the trapping mechanism. In addition, conduction mechanisms are investigated for reactive and inert electrodes. Seimconductor Research Corporation.

  6. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    Science.gov (United States)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  7. Polymer-Free Carbon Nanotube Thermoelectrics with Improved Charge Carrier Transport and Power Factor

    Energy Technology Data Exchange (ETDEWEB)

    Norton-Baker, Brenna; Ihly, Rachelle; Gould, Isaac E.; Avery, Azure D.; Owczarczyk, Zbyslaw R.; Ferguson, Andrew J.; Blackburn, Jeffrey L.

    2016-12-09

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have recently attracted attention for their promise as active components in a variety of optical and electronic applications, including thermoelectricity generation. Here we demonstrate that removing the wrapping polymer from the highly enriched s-SWCNT network leads to substantial improvements in charge carrier transport and thermoelectric power factor. These improvements arise primarily from an increase in charge carrier mobility within the s-SWCNT networks because of removal of the insulating polymer and control of the level of nanotube bundling in the network, which enables higher thin-film conductivity for a given carrier density. Ultimately, these studies demonstrate that highly enriched s-SWCNT thin films, in the complete absence of any accompanying semiconducting polymer, can attain thermoelectric power factors in the range of approximately 400 uW m-1K-2, which is on par with that of some of the best single-component organic thermoelectrics demonstrated to date.

  8. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    Science.gov (United States)

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

  9. Super-knock Suppression Using Split Injection in a Turbo-Charged GDI Engine

    Directory of Open Access Journals (Sweden)

    Lv Meng

    2016-01-01

    Full Text Available Super-knock, which occurs under low-speed and big load operate condition in turbo-charged gasoline direct injection (TGDI engine, is an abnormal combustion phenomenon. Due to its potential to cause degradation of the engine, super knock has become the main obstacle for increasing specific power and lowing fuel consumption of engine. In order to investigate suppress strategies of super-knock, split injection is applied on a high boosted GDI engine. The results shows that: super knock correlates to some extent with split injection; further study shows that appropriate split injection duty ratio and the end of second injection time could reduce super knock effectively.

  10. Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through V2O5 interlayer.

    Science.gov (United States)

    Baeg, Kang-Jun; Bae, Gwang-Tae; Noh, Yong-Young

    2013-06-26

    Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable Rc to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.

  11. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    Science.gov (United States)

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  12. Bisphosphonate-adsorbed ceramic nanoparticles increase bone formation in an injectable carrier for bone tissue engineering

    Directory of Open Access Journals (Sweden)

    Tegan L Cheng

    2015-10-01

    Full Text Available Sucrose acetate isobutyrate (SAIB is a sugar-based carrier. We have previously applied SAIB as a minimally invasive system for the co-delivery of recombinant human bone morphogenetic protein-2 (rhBMP-2 and found synergy when co-delivering zoledronic acid (ZA and hydroxyapatite (HA nanoparticles. Alternative bioceramics were investigated in a murine SAIB/rhBMP-2 injection model. Neither beta-tricalcium phosphate (TCP nor Bioglass (BG 45S5 had a significant effect on bone volume (BV alone or in combination with the ZA. 14C-labelled ZA binding assays showed particle size and ceramic composition affected binding with nano-HA > micro-HA > TCP > BG. Micro-HA and nano-HA increased BV in a rat model of rhBMP-2/SAIB injection (+278% and +337%, and BV was further increased with ZA–adsorbed micro-HA and nano-HA (+530% and +889%. These data support the use of ZA–adsorbed nanoparticle-sized HA as an optimal additive for the SAIB/rhBMP-2 injectable system for bone tissue engineering.

  13. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  14. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    Science.gov (United States)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh

  15. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    Science.gov (United States)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  16. Influence of Exciton Lifetime on Charge Carrier Dynamics in an Organic Heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, Kanika L.; Sykes, Matthew E; An, Kwang Hyup; Friedberg, Bradley; Green, Peter F.; Shtein, Max

    2013-03-18

    Interactions between charge carriers and excitons, as well as between excitons and optical cavity modes in organic optoelectronic devices are fundamental to their operational limits and chief in preventing the realization of certain phenomena, such as electrically pumped organic lasing. We uncovered a previously unreported phenomenon, wherein optical cavity-modulated exciton decay rate leads to a concomitant modulation in the electrical current of an archetypal NPD/Alq₃ organic light emitting device operated in forward bias. The magnitude of this variation is sensitive to the local dielectric environment of the device and is found to be as large as 15%.

  17. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    Science.gov (United States)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent

  18. A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme

    Energy Technology Data Exchange (ETDEWEB)

    Razavipour, S. G., E-mail: sgrazavi@uwaterloo.ca; Xu, C.; Wasilewski, Z. R.; Ban, D. [Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. W., Waterloo, Ontario N2L3G1 (Canada); Dupont, E.; Laframboise, S. R. [National Research Council, Blg. M-50, 1200 Montreal Rd., Ottawa, Ontario K1A0R6 (Canada); Chan, C. W. I.; Hu, Q. [Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-01-27

    A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al{sub 0.25}Ga{sub 0.75}As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial.

  19. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-05-22

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  20. SEMICONDUCTOR DEVICES: Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

    Science.gov (United States)

    Jiate, Zhao; Yong, Zhao; Wanjun, Wang; Yinlei, Hao; Qiang, Zhou; Jianyi, Yang; Minghua, Wang; Xiaoqing, Jiang

    2010-06-01

    The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation. Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices, especially for small structure ones. For a device with a 1000 μm modulation length, the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions. A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

  1. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations.

    Science.gov (United States)

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  2. Molecular effect on equilibrium charge-state distributions. [of nitrogen ions injected through carbon foil

    Science.gov (United States)

    Wickholm, D.; Bickel, W. S.

    1976-01-01

    The paper describes an experiment consisting of the acceleration of N(+) and N2(+) ions to energies between 0.25 and 1.75 MeV and their injection through a thin carbon foil, whereupon they were charge-state analyzed with an electrostatic analyzer. A foil-covered electrically suppressed Faraday cup, connected to a stepping motor, moved in the plane of the dispersed beams. The Faraday cup current, which was proportional to the number of incident ions, was sent to a current digitizer and computer programmed as a multiscaler. The energy-dependent charge-state fractions, the mean charge and the distribution width were calculated. It was shown that for incident atoms, the charge state distribution appeared to be spread over more charge states, while for the incident molecules, there was a greater fraction of charge states near the mean charge.

  3. Charge carrier mobility and concentration as a function of composition in AgPO3-AgI glasses.

    Science.gov (United States)

    Rodrigues, Ana Candida Martins; Nascimento, Marcio Luis Ferreira; Bragatto, Caio Barca; Souquet, Jean-Louis

    2011-12-21

    Conductivity data of the xAgI(1 - x)AgPO(3) system (0 ≤ x ≤ 0.5) were collected in the liquid and glassy states. The difference in the dependence of ionic conductivity on temperature below and above their glass transition temperatures (T(g)) is interpreted by a discontinuity in the charge carrier's mobility mechanisms. Charge carrier displacement occurs through an activated mechanism below T(g) and through a Vogel-Fulcher-Tammann-Hesse mechanism above this temperature. Fitting conductivity data with the proposed model allows one to determine separately the enthalpies of charge carrier formation and migration. For the five investigated compositions, the enthalpy of charge carrier formation is found to decrease, with x, from 0.86 to 0.2 eV, while the migration enthalpy remains constant at ≈0.14 eV. Based on these values, the charge carrier mobility and concentration in the glassy state can then be calculated. Mobility values at room temperature (≈10(-4) cm(2) V(-1) s(-1)) do not vary significantly with the AgI content and are in good agreement with those previously measured by the Hall-effect technique. The observed increase in ionic conductivity with x would thus only be due to an increase in the effective charge carrier concentration. Considering AgI as a weak electrolyte, the change in the effective charge carrier concentration is justified and is correlated to the partial free energy of silver iodide forming a regular solution with AgPO(3).

  4. Charge carrier transport in molecularly doped polycarbonate as a test case for the dipolar glass model.

    Science.gov (United States)

    Novikov, S V; Tyutnev, A P

    2013-03-14

    We present the results of Monte Carlo simulations of the charge carrier transport in a disordered molecular system containing spatial and energetic disorders using the dipolar glass model. Model parameters of the material were chosen to fit a typical polar organic photoconductor polycarbonate doped with 30% of aromatic hydrazone, whose transport properties are well documented in literature. Simulated carrier mobility demonstrates a usual Poole-Frenkel field dependence and its slope is very close to the experimental value without using any adjustable parameter. At room temperature transients are universal with respect to the electric field and transport layer thickness. At the same time, carrier mobility does not depend on the layer thickness and transients develop a well-defined plateau where the current does not depend on time, thus demonstrating a non-dispersive transport regime. Tails of the transients decay as power law with the exponent close to -2. This particular feature indicates that transients are close to the boundary between dispersive and non-dispersive transport regimes. Shapes of the simulated transients are in very good agreement with the experimental ones. In summary, we provide a first verification of a self-consistency of the dipolar glass transport model, where major transport parameters, extracted from the experimental transport data, are then used in the transport simulation, and the resulting mobility field dependence and transients are in very good agreement with the initial experimental data.

  5. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.

    2014-03-22

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  6. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    Science.gov (United States)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  7. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

    Science.gov (United States)

    Liao, Bolin; Maznev, A. A.; Nelson, Keith A.; Chen, Gang

    2016-01-01

    There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon–phonon interactions, it has been a challenge to directly measure electron–phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump–probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron–phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron–phonon interaction on phonon transport in doped semiconductors. PMID:27731406

  8. Ultrafast dynamics of charge carrier photogeneration and geminate recombination in conjugated polymer:fullerene solar cells

    Science.gov (United States)

    Müller, J. G.; Lupton, J. M.; Feldmann, J.; Lemmer, U.; Scharber, M. C.; Sariciftci, N. S.; Brabec, C. J.; Scherf, U.

    2005-11-01

    We investigate the nature of ultrafast exciton dissociation and carrier generation in acceptor-doped conjugated polymers. Using a combination of two-pulse femtosecond spectroscopy with photocurrent detection, we compare the exciton dissociation and geminate charge recombination dynamics in blends of two conjugated polymers, MeLPPP [methyl-substituted ladder-type poly( p -phenylene)] and MDMO-PPV [poly(2-methoxy,5-(3,7-dimethyloctyloxy)-1,4-phenylenevinylene], with the electron accepting fullerene derivative PCBM [1-(3-methoxycarbonyl)-propyl-1-phenyl- (6,6)C61 ]. This technique allows us to distinguish between free charge carriers and Coulombically bound polaron pairs. Our results highlight the importance of geminate pair recombination in photovoltaic devices, which limits the device performance. The comparison of different materials allows us to address the dependence of geminate recombination on the film morphology directly at the polymer:fullerene interface. We find that in the MeLPPP:PCBM blend exciton dissociation generates Coulombically bound geminate polaron pairs with a high probability for recombination, which explains the low photocurrent yield found in these samples. In contrast, in the highly efficient MDMO-PPV:PCBM blend the electron transfer leads to the formation of free carriers. The anisotropy dynamics of electronic transitions from neutral and charged states indicate that polarons in MDMO-PPV relax to delocalized states in ordered domains within 500fs . The results suggest that this relaxation enlarges the distance of carrier separation within the geminate pair, lowering its binding energy and favoring full dissociation. The difference in geminate pair recombination concurs with distinct dissociation dynamics. The electron transfer is preceded by exciton migration towards the PCBM sites. In MeLPPP:PCBM the exciton migration time decays smoothly with increasing PCBM concentration, indicating a trap-free exciton hopping. In MDMO-PPV:PCBM, however

  9. Radiation-induced noise in Charge-Coupled Device (CCD) and Charge-Injection Device (CID) imagers

    Science.gov (United States)

    Yates, George J.; Turko, Bojan T.

    1990-08-01

    Measurements of radiation sensitivity for interline transfer charge-coupled devices (CCDs) and charge-injection devices (CIDs) from irradiation with high-energy photons (CO-60 gammas and 3-to 5-MeV end-point Bremsstrahlung) and 14-MeV neutrons are presented to establish imager susceptibility in such environments. Results from electric clearing techniques designed for quick (approximately 300 microseconds for the CCDs and approximately 10 microseconds for CIDs) removal (or dumping) of radiation-induced charge from prompt sources are discussed. Application of the techniques coupled with long (microsecond to millisecond) persistence radiation-to-light converters for image retention is described. Typical data illustrating the effectiveness of charge clearing in removal of radiation noise are included for nanosecond duration pulsed x ray/gamma-ray doses (50 millirad to 5-rad range) and microsecond duration neutron fluences approaching 10(exp 8) n/sq cm.

  10. A Method to Overcome Space Charge at Injection

    Energy Technology Data Exchange (ETDEWEB)

    Ya. Derbenev

    2005-09-29

    The transverse space charge forces in a high current, low energy beam can be reduced by mean of a large increase of the beam's transverse sizes while maintaining the beam area in the 4D phase space. This can be achieved by transforming the beam area in phase space of each of two normal 2D transverse (either plane or circular) modes from a spot shape into a narrow ring of a large amplitude, but homogeneous in phase. Such a transformation results from the beam evolution in the island of a dipole resonance when the amplitude width of the island shrinks adiabatically. After stacking (by using stripping foils or cooling) the beam in such a state and accelerating to energies sufficiently high that the space charge becomes insignificant, the beam then can be returned back to a normal spot shape by applying the reverse transformation. An arrangement that can provide such beam gymnastics along a transport line after a linac and before a booster and/or in a ring with circulating beam will be described and numerical estimates will be presented. Other potential applications of the method will be briefly discussed.

  11. Effects of Stress Activated Positive-Hole Charge Carriers on Radar Reflectance of Gabbro-Diorite

    Science.gov (United States)

    Williams, C.; Vanderbilt, V. C.; Dahlgren, R.; Cherukupally, A.; Freund, F. T.

    2011-12-01

    When load is applied to igneous or high-grade metamorphic rocks, trapped electron vacancy defects are activated and become mobile positive-hole charge carriers. These mobile charge carriers repel each other through Coulomb interactions and move outward from the stressed region. As large numbers of positive-holes reach the surface of the rock, this surface charge may cause an observable change in radar reflectance. In this experiment, a series of holes is drilled into a large gabbro-diorite boulder from the A.R. Wilson Quarry in Aromas, CA. Bustar, an expansive, non-explosive demolition agent, is poured into the holes while a 1.2 GHz radar system measures the amplitude of radar waves reflected from the rock's surface. Over the course of the experiment, the radar antenna is swept repeatedly across one face of the rock, pausing in one of twelve positions to collect data before moving to the next position. At the end of each sweep, the radar is calibrated against both a corner reflector and a flat-plate reflector. This sampling method is employed to detect and assign a cause to transient effects observed at any one location. An initial analysis of the radar data shows a high level of agreement between readings from the flat-plate and corner reflectors, supporting the use of flat-plate reflectors as a calibration source for this omnidirectional radar system. Fitting a trend to the amplitude of the wave reflected from the rock's surface is complicated by the presence of unexpected outliers and noise artifacts from the radar system itself. It appears that such a trend, if present, would likely indicate a change in amplitude of the reflected signal of less than 5 percent over the course of the experiment.

  12. Multi-turn injection into a heavy-ion synchrotron in the presence of space charge

    CERN Document Server

    Appel, Sabrina

    2014-01-01

    For heavy-ion synchrotrons an efficient Multi-Turn Injection (MTI) from the injector linac is crucial in order to reach the specified currents using the available machine acceptance. The beam loss during the MTI must not exceed the limits determined by machine protection and by the vacuum requirements. Especially for low energy and intermediate charge state ions, the beam loss at the injection septum can cause a degradation of the vacuum and a corresponding reduction of the beam lifetime. In order to optimize the injection of intense beams a very detailed simulation model was developed. Besides the closed orbit bump, lattice errors, the position of the septum and other aperture limiting components the transverse space charge force is included self-consistently. The space charge force causes a characteristic shift of the optimum tunes and a smoothing of the phase space density.

  13. Time-resolved measurements of charge carrier dynamics and optical nonlinearities in narrow-bandgap semiconductors

    Science.gov (United States)

    Olson, Benjamin Varberg

    All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as a next generation source of these materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential transmission measurements are used here to demonstrate that Ga-free InAs/InAsSb T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements at 77 K provided minority carrier lifetimes of 9 mus and 3 mus for an unintentionally doped mid-wave infrared (MWIR) InAs/InAsSb T2SL and InAsSb alloy, respectively; a two order of magnitude increase compared to the 90 ns minority carrier lifetime measured in a comparable MWIR InAs/GaSb T2SL. Through temperature-dependent lifetime measurements, the various carrier recombination processes are differentiated and the dominant mechanisms identified for each material. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs for potentially improved infrared photodetectors. In addition to carrier lifetimes, the drift and diffusion of excited charge carriers through the superlattice growth layers (i.e. vertical transport) directly affects the performance of photodetectors and emitters. Unfortunately, there is a lack of information pertaining to vertical transport, primarily due to difficulties in making measurements on thin growth layers and the need for non-standard measurement techniques. However, all-optical ultrafast techniques are successfully used here to directly measure vertical diffusion in MWIR InAs/GaSb T2SLs. By optically

  14. Bulk charge carrier transport in push-pull type organic semiconductor.

    Science.gov (United States)

    Karak, Supravat; Liu, Feng; Russell, Thomas P; Duzhko, Volodimyr V

    2014-12-10

    Operation of organic electronic and optoelectronic devices relies on charge transport properties of active layer materials. The magnitude of charge carrier mobility, a key efficiency metrics of charge transport properties, is determined by the chemical structure of molecular units and their crystallographic packing motifs, as well as strongly depends on the film fabrication approaches that produce films with different degrees of anisotropy and structural order. Probed by the time-of-flight and grazing incidence X-ray diffraction techniques, bulk charge carrier transport, molecular packing, and film morphology in different structural phases of push-pull type organic semiconductor, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5yl)benzo[c][1,2,5] thiadiazole), one of the most efficient small-molecule photovoltaic materials to-date, are described herein. In the isotropic phase, the material is ambipolar with high mobilities for a fluid state. The electron and hole mobilities at the phase onset at 210.78 °C are 1.0 × 10(-3) cm(2)/(V s) and 6.5 × 10(-4) cm(2)/(V s), respectively. Analysis of the temperature and electric field dependences of the mobilities in the framework of Gaussian disorder formalism suggests larger energetic and positional disorder for electron transport sites. Below 210 °C, crystallization into a polycrystalline film with a triclinic unit cell symmetry and high degree of anisotropy leads to a 10-fold increase of hole mobility. The mobility is limited by the charge transfer along the direction of branched alkyl side chains. Below 90 °C, faster cooling rates produce even higher hole mobilities up to 2 × 10(-2) cm(2)/(V s) at 25 °C because of the more isotropic orientations of crystalline domains. These properties facilitate in understanding efficient material performance in photovoltaic devices and will guide further development of materials and devices.

  15. Improved charge transport and injection in a meso-superstructured solar cell by a tractable pre-spin-coating process.

    Science.gov (United States)

    Li, Nan; Li, Haoyuan; Li, Yu; Wang, Shufeng; Wang, Liduo

    2015-10-07

    In meso-superstructured solar cells (MSSCs), the state-of-the-art perovskite acts as both the light harvester and electron transporter due to its ambipolar properties. The inefficient pore filling and infiltration of perovskite directly affect the continuous distribution of perovskite in mesoporous Al2O3, resulting in discontinuous carrier transport in the mesoporous structure and insufficient electron injection to the compact TiO2 layer. Herein, we introduce a simple pre-spin-coating process to improve the infiltration and pore filling of perovskite, which results in higher light absorption and enhanced electron injection, as seen in UV-vis spectra and photoluminescence (PL) spectra, respectively. We first apply time of flight (TOF) experiments to characterize charge transport in MSSCs, and the results reveal that more continuous charge transport pathways are formed with the pre-spin-coating process. This effective method, with ease of processing, demonstrates obviously improved photocurrents, reaching an efficiency as high as 14%, and promotes the application of lead halide perovskite materials in the photovoltaics field.

  16. Dispersion Matching of a Space Charge dominated Beam at Injection into the CERN PS Booster

    CERN Document Server

    Hanke, Klaus; Scrivens, Richard

    2005-01-01

    In order to match the dispersion at injection into the CERN PS Booster, the optics of the injection line was simulated using two different codes (MAD and TRACE). The simulations were benchmarked versus experimental results. The model of the line was then used to re-match the dispersion. Experimental results are presented for different optics of the line. Measurements with varying beam current show the independence of the measured quantity of space-charge effects.

  17. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  18. First measurements of charge carrier density and mobility of in-situ enriched 28Si

    Science.gov (United States)

    Ramanayaka, A. N.; Dwyer, K. J.; Kim, Hyun-Soo; Stewart, M. D., Jr.; Pomeroy, J. M.

    Magnetotransport in top gated Hall bar devices is investigated to characterize the electrical properties of in-situ enriched 28Si. Isotopically enriched 28Si is an ideal candidate for quantum information processing devices as the elimination of unpaired nuclear spins improves the fidelity of the quantum information. Using mass filtered ion beam deposition we, in-situ, enrich and deposit epitaxial 28Si, achieving several orders of magnitude better enrichment compared to other techniques. In order to explore the electrical properties and optimize the growth conditions of in-situ enriched 28Si we perform magnetotransport measurements on top gated Hall bar devices at temperatures ranging from 300 K to cryogenic temperatures and at moderate magnetic fields. Here, we report on the charge carrier density and mobility extracted from such experiments, and will be compared among different growth conditions of in-situ enriched 28Si.

  19. Anisotropic charge carrier mobilities in bulk silicon at high electric fields

    CERN Document Server

    Becker, Julian; Klanner, Robert

    2010-01-01

    The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for $$ and $$ crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p$^+$nn$^+$ diodes in the temperature range between -30$^\\circ$C and 50$^\\circ$C and electric fields of 2$\\times$10$^3$~V/cm to 2$\\times$10$^4$~V/cm.

  20. Effect of uniaxial compression on traps of excitons and charge carriers in poly(9-vinylcarbazole) films

    Science.gov (United States)

    Skryshevski, Yu. A.

    2014-03-01

    The effect of uniaxial pressure (1 × 108 Pa) on the photoluminescence spectra and thermally stimulated luminescence curves of poly(9-vinylcarbazole) has been investigated in the temperature range of 5-295 K. The thermally stimulated luminescence curve of crystalline carbazole has been measured for comparison. The high-temperature wings of the thermally stimulated luminescence curves are approximated by a Gaussian function, the half-width of which characterizes the disorder of energy states of deep structural traps. It is concluded that the pressure inhibits conformational changes of polymer chains of poly(9-vinylcarbazole), which leads to the formation of sandwich-like excimers as well as to an ordering of the spatial arrangement of the side carbazolyl groups. As a result, the concentration of "excimer-forming" centers increases, whereas the degree of disorder of energy states of deep structural traps of charge carriers is reduced by almost half and remains unchanged after the depressurization.

  1. Elemental isomerization processes for a photochromic diarylethene film based on carrier injection toward all-electrically operable organic memory

    Science.gov (United States)

    Tsujioka, Tsuyoshi; Yamamoto, Kazuki

    2016-06-01

    We propose a basic concept of all-electrically operable organic memory with a photochromic diarylethene (DAE) film based on a transistor structure, in which the DAE memory layer is recordable, erasable, and nondestructively readable by an electrical method. To realize such memory, we investigated each elementary process for recording, erasing, or nondestructive reading by current injection and electrostatic methods for the DAE layer. Both ring-opening and ring-closure isomerization reactions were confirmed for the injection of both carriers (electrons and holes). Hole injection induced ring-opening reaction only. These reaction modes can be utilized in the recording and erasing modes. Since no reactions for electron injection and current modulation based on photoisomerization were observed, electron current injection can be applied to nondestructive readout.

  2. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    Science.gov (United States)

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-09

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

  3. Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

    Directory of Open Access Journals (Sweden)

    Petrović Jovana P.

    2009-01-01

    Full Text Available In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular and square (bimolecular is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V.

  4. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  5. Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

    Science.gov (United States)

    Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

    2017-03-01

    A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

  6. Charge carrier transport at the nanoscale: Electron and hole transport in self-assembled discotic liquid crystals: Mobile ionic charges in nanocomposite solid electrolytes

    NARCIS (Netherlands)

    Haverkate, L.A.

    2013-01-01

    This thesis explores some fundamental aspects of charge carrier transport at the nanoscale. The study is divided in two parts. In the first part, the structural, dynamical and vibrational properties of discotic liquid crystals are studied in relation to the potential of these self-assembled ‘mesopha

  7. To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

    KAUST Repository

    Parida, Manas R.

    2015-04-28

    Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

  8. Determination of the Ultraviolet and Visible Spectral Response of a Charge - Injection Device Array Detector.

    Science.gov (United States)

    1980-08-01

    spectroscopic systems. In contrast to these approaches the charge-injection device has several unique features. The CID * ensor consists of a discrete...Embassy University of California, San Diego APO San Francisco 96503 La Jolla, California Mr. James Kelley Dr. A. Zirino DT.R.C Code 2R03 Naval Undersea Center Annapolis, Maryland 21402 San Diego, California 92132 1

  9. Charge transport, injection, and photovoltaic phenomena in oligo(phenylenevinylene) based diodes

    NARCIS (Netherlands)

    Melzer, Christian; Krasnikov, Victor V.; Hadziioannou, Georges

    2003-01-01

    We report on the charge transport and injection phenomena of (E,E,E,E)-1,4-bis[(4-styryl)styryl]-2-methoxy-5-(2'-ethylhexoxy)benzene (MEH-OPV5) sandwiched between asymmetric contacts. The hole mobility of MEH-OPV5 was determined by means of transient electroluminescence. The steady-state current was

  10. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    Science.gov (United States)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  11. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong

    2016-04-15

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.

  12. Directional Charge-Carrier Transport in Oriented Benzodithiophene Covalent Organic Framework Thin Films.

    Science.gov (United States)

    Medina, Dana D; Petrus, Michiel L; Jumabekov, Askhat N; Margraf, Johannes T; Weinberger, Simon; Rotter, Julian M; Clark, Timothy; Bein, Thomas

    2017-02-22

    Charge-carrier transport in oriented COF thin films is an important factor for realizing COF-based optoelectronic devices. We describe how highly oriented electron-donating benzodithiophene BDT-COF thin films serve as a model system for a directed charge-transport study. Oriented BDT-COF films were deposited on different electrodes with excellent control over film roughness and topology, allowing for high-quality electrode-COF interfaces suitable for device fabrication. Hole-only devices were constructed to study the columnar hole mobility of the BDT-COF films. The transport measurements reveal a clear dependency of the measured hole mobilities on the BDT-COF film thickness, where thinner films showed about two orders of magnitude higher mobilities than thicker ones. Transport measurements under illumination yielded an order of magnitude higher mobility than in the dark. In-plane electrical conductivity values of up to 5 × 10(-7) S cm(-1) were obtained for the oriented films. Impedance measurements of the hole-only devices provided further electrical description of the oriented BDT-COF films in terms of capacitance, recombination resistance, and dielectric constant. An exceptionally low dielectric constant value of approximately 1.7 was estimated for the BDT-COF films, a further indication of their highly porous nature. DFT and molecular-dynamics simulations were carried out to gain further insights into the relationships between the COF layer interactions, electronic structure, and the potential device performance.

  13. Performance of the CERN PSB at 160 MeV with $H^{-}$ charge exchange injection

    CERN Document Server

    AUTHOR|(CDS)2084247; Santoni, Claudio

    As part of the LHC Injectors Upgrade Project, the CERN PS Booster (PSB) will be upgraded with a H- charge exchange injection system and its injection energy will be raised from 50 MeV to 160 MeV to obtain the beam brightness required for the LHC High-Luminosity Upgrade. Space charge effects like beam losses and transverse emittance blow-up at injection are expected to be the main limitations towards the achievement of the required high brightness. Studies of beam dynamics in presence of space charge in order to evaluate the performances of the PSB after the Upgrade have been performed. The first part of the work consists of measurements in the present machine, to study the effects of space charge and its interplay with resonances and to have a good set of data for code benchmarking. The code chosen for the beam tracking in presence of space charge is PTC-Orbit (and PyOrbit). Necessary numerical convergence studies are presented together with a benchmark with the PSB measurements. Once assessed the code and it...

  14. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  15. Correlating excited state and charge carrier dynamics with photovoltaic parameters of perylene dye sensitized solar cells: influences of an alkylated carbazole ancillary electron-donor.

    Science.gov (United States)

    Li, Yang; Wang, Junting; Yuan, Yi; Zhang, Min; Dong, Xiandui; Wang, Peng

    2017-01-18

    Two perylene dyes characteristic of electron-donors phenanthrocarbazole (PC) and carbazyl functionalized PC are selected to study the complicated dynamics of excited states and charge carriers, which underlie the photovoltaic parameters of dye-sensitized solar cells (DSCs). We have combined femtosecond fluorescence up-conversion and time-resolved single-photon counting techniques to probe the wavelength-dependent photoluminescence dynamics of dye molecules not only dissolved in THF but also grafted on the surface of oxide nanoparticles. Excited state relaxation and electron injection both occur on a similar timescale, resulting in a very distributive kinetics of electron injection. It is also found that the carbazyl ancillary electron-donor causes a faster electron injection, which over-compensates the adverse impact of a slightly shorter lifetime of the equilibrium excited state. Nanosecond transient absorption and transient photovoltage decay measurements have shown that conjugating carbazyl to PC can effectively slow down the kinetics of charge recombination of electrons in titania with both photo-oxidized dye molecules and triiodide anions, improving the cell photovoltage.

  16. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Photo-induced charge transfer and relaxation of persistent charge carriers in polymer/nanocrystal composites for applications in hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Heinemann, Marc Daniel; Zutz, Folker; Kolny-Olesiak, Joanna; Borchert, Holgert; Riedel, Ingo; Parisi, Juergen [University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory, Oldenburg (Germany); Maydell, Karsten von [EWE Research Center for Energy Technology, Oldenburg (Germany)

    2009-12-09

    The photo-induced charge transfer and the dynamics of persistent charge carriers in blends of semiconducting polymers and nanocrystals are investigated. Regioregular poly(3-hexylthiophene) (P3HT) is used as the electron donor material, while the acceptor moiety is established by CdSe nanocrystals (nc-CdSe) prepared via colloidal synthesis. As a reference system, organic blends of P3HT and [6,6]-phenyl C{sub 61}-butyric acid methyl ester (PCBM) are studied as well. The light-induced charge transfer between P3HT and the acceptor materials is studied by photoluminescence (PL), photo-induced absorption (PIA) and light-induced electron spin resonance spectroscopy (LESR). Compared to neat P3HT samples, both systems show an intensified formation of polarons in the polymer upon photo-excitation, pointing out successful separation of photogenerated charge carriers. Additionally, relaxation of the persistent charge carriers is investigated, and significant differences are found between the hybrid composite and the purely organic system. While relaxation, reflected in the transient signal decay of the polaron signal, is fast in the organic system, the hybrid blends exhibit long-term persistence. The appearance of a second, slow recombination channel indicates the existence of deep trap states in the hybrid system, which leads to the capture of a large fraction of charge carriers. A change of polymer conformation due to the presence of nc-CdSe is revealed by low temperature LESR measurements and microwave saturation techniques. The impact of the different recombination behavior on the photovoltaic efficiency of both systems is discussed. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  18. Investigation of field-dependent charge carrier generation and recombination in polymer based solar cells by transient extraction currents

    Energy Technology Data Exchange (ETDEWEB)

    Kniepert, Juliane; Blakesley, James; Neher, Dieter [University of Potsdam (Germany)

    2011-07-01

    There is an ongoing discussion as to whether photoinduced charge transfer in P3HT:PCBM solar cells leads to fully separated electrons and holes, independent of an electric field, or Coulombically bound interfacial charge pairs. While recent studies by R.A. Marsh et al. with transient absorption spectroscopy gave clear evidence for the formation and field-induced dissociation of bound polaron pairs, measurements by I.A. Howard et al. were in favour of hot exciton dissociation. Here, we present the results of bias-dependent Time Delayed Collection Field (TDCF) measurements to access directly the density of free charge carriers in P3HT:PCBM blends coated from dichlorobenzene. Solvent annealing was applied to yield a phase-separated morphology and the corresponding solar cells exhibit high values for the external quantum efficiency and fill factor. Our setup allowed us to follow the generation and recombination of photogenerated charges with a so far unattained time resolution of 40 ns. Our experiments show that the number of collected carriers is independent of the applied bias during pulsed illumination implying that extractable carriers in P3HT:PCBM blends are not generated by the field-assisted separation of bound polaron pairs. In addition, our experiments support the view that bimolecular recombination of free carriers is strongly suppressed in phase-separated P3HT:PBCM blends.

  19. Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids.

    Science.gov (United States)

    Heo, Seung Jin; Yoon, Seokhyun; Oh, Sang Hoon; Yoon, Doo Hyun; Kim, Hyun Jae

    2014-01-21

    We investigated the effects of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot (CQD) solids. We applied high pressure to PbS CQD solids using nitrogen gas to reduce the inter-dot distance. Using this simple process, we obtained conductive PbS CQD solids. Terahertz time-domain spectroscopy was used to study charge carrier transport as a function of pressure. We found that the minimum pressure needed to increase the dielectric constant, conductivity, and carrier mobility was 4 MPa. All properties dramatically improved at 5 MPa; for example, the mobility increased from 0.13 cm(2) V(-1) s(-1) at 0.1 MPa to 0.91 cm(2) V(-1) s(-1) at 5 MPa. We propose this simple process as a nondestructive approach for making conductive PbS CQD solids that are free of chemical and physical defects.

  20. Electric-field enhanced thermionic emission model for carrier injection mechanism of organic field-effect transistors: understanding of contact resistance

    Science.gov (United States)

    Li, Jun; Ou-Yang, Wei; Weis, Martin

    2017-01-01

    We developed an electric-field enhanced thermionic emission model combined with an equivalent circuit for a three-terminal organic transistor structure to interpret the gate-voltage dependent contact resistance. In the model the contact resistance is composed of two components: (i) the interfacial resistance not only influenced by interfacial energy barrier but also strongly dependent on active layer thickness, and (ii) the bulk resistance that is affected only by active layer itself. The model having physical meaning in the fitting parameters, different from the previous with simple power functions, can well fit the voltage dependence for a series of independent data. In addition, the bulk resistance component can be extracted and is estimated reasonable for the first time, which is demonstrated not to be neglected even for the devices with high effective mobility. The developed model will be helpful for understanding of contact resistance and charge carrier injection behavior in the organic thin film transistors.

  1. Compositional dependence of charge carrier transport in kesterite Cu2ZnSnS4 solar cells

    Science.gov (United States)

    Just, Justus; Nichterwitz, Melanie; Lützenkirchen-Hecht, Dirk; Frahm, Ronald; Unold, Thomas

    2016-12-01

    Cu2ZnSnS4 solar cells deposited by thermal co-evaporation have been characterized structurally and electronically to determine the dependence of the electronic properties on the elemental composition of the kesterite phase, which can significantly deviate from the total sample composition. To this end, the kesterite phase content and composition were determined by a combination of X-ray fluorescence and X-ray absorption measurements. The electronic properties, such as carrier density and minority carrier diffusion length, were determined by electron beam induced current measurements and capacitance-voltage profiling. The charge-carrier transport properties are found to strongly depend on the Cu/(Sn+Zn) ratio of the kesterite phase. For the Cu-poor sample, a minority carrier diffusion length of 270 nm and a total collection length of approx. 500 nm are deduced, indicating that current collection should not be an issue in thin devices.

  2. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius; Myers, Thomas H.; Barnes, Teresa M.; Jensen, Søren A.; Allende Motz, Alyssa M.

    2017-02-20

    From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 um. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 +/- 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Therefore, the extended defects are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.

  3. Effects of the interfacial charge injection properties of silver nanowire transparent conductive electrodes on the performance of organic light-emitting diodes

    Science.gov (United States)

    Kim, Jin-Hoon; Triambulo, Ross E.; Park, Jin-Woo

    2017-03-01

    We investigated the charge injection properties of silver nanowire networks (AgNWs) in a composite-like structure with poly(2,3-dihydrothieno-1,4-dioxin)-poly(styrenesulfonate) (PEDOT:PSS). The composite films acted as the anodes and hole transport layers (HTLs) in organic light-emitting diodes (OLEDs). The current density (J)-voltage (V)-luminance (L) characteristics and power efficiency (ɛ) of the OLEDs were measured to determine their electrical and optical properties. The charge injection properties of the AgNWs in the OLEDs during operation were characterized via impedance spectroscopy (IS) by determining the variations in the capacitances (C) of the devices with respect to the applied V and the corresponding frequency (f). All measured results were compared with results for OLEDs fabricated on indium tin oxide (ITO) anodes. The OLEDs on AgNWs showed lower L and ɛ values than the OLEDs on ITO. It was also observed that AgNWs exhibit excellent charge injection properties and that the interfaces between the AgNWs and the HTL have very small charge injection barriers, resulting in an absence of charge carrier traps when charges move across these interfaces. However, in the AgNW-based OLED, there was a large mismatch in the number of injected holes and electrons. Furthermore, the highly conductive electrical paths of the AgNWs in the composite-like AgNW and PEDOT:PSS structure allowed a large leakage current of holes that did not participate in radiative recombination with the electrons; consequently, a lower ɛ was observed for the AgNW-based OLEDs than for the ITO-based OLEDs. To match the injection of electrons by the electron transport layer (ETL) in the AgNW-based OLED with that of holes by the AgNW/PEDOT:PSS composite anode, the electron injection barrier of the ETL was decreased by using the low work function polyethylenimine ethoxylated (PEIE) doped with n-type cesium carbonate (Cs2CO3). With the doped-PEIE, the performance of the AgNW-based OLED was

  4. Computational Confirmation of the Carrier for the "XCN" Interstellar Ice Bank: OCN(-) Charge Transfer Complexes

    Science.gov (United States)

    Park, J.-Y.; Woon, D. E.

    2004-01-01

    Recent experimental studies provide evidence that carrier for the so-called XCN feature at 2165 cm(exp -1) (4.62 micron) in young stellar objects is an OCN(-)/NH4(+) charge transfer (CT) complex that forms in energetically processed interstellar icy grain mantles. Although other RCN nitriles and RCN iosonitriles have been considered, Greenberg's conjecture that OCN(-) is associated with the XCN feature has persisted for over 15 years. In this work we report a computational investigation that thoroughly confirms the hypothesis that the XCN feature observed in laboratory studies can result from OCN(-)/NH4(+) CT complexes arising from HNCO and NH3, in a water ice environment. Density functional theory calculations with theory calculations with HNCO, NH3, and up to 12 waters reproduce seven spectroscopic measurements associated with XCN: the band origin of the asymmetric stretching mode of OCN(-), shifts due to isotopic substitutions of C, N, O, and H, and two weak features. However, very similar values are also found for the OCN(-)/NH4(+) CT complex arising from HOCN and NH3. In both cases, the complex forms by barrierless proton transfer from HNCO or HOCN to NH3 during the optimization of the solvated system. Scaled B3LYP/6-31+G** harmonic frequencies for HNCO and HOCN cases are 2181 and 2202 cm(exp -1), respectively.

  5. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    Energy Technology Data Exchange (ETDEWEB)

    Barone, C., E-mail: cbarone@unisa.it; Mauro, C.; Pagano, S. [Dipartimento di Fisica “E.R. Caianiello” and CNR-SPIN Salerno, Università di Salerno, I-84084 Fisciano, Salerno (Italy); Landi, G.; Neitzert, H. C. [Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno (Italy)

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  6. Charge-carrier transport and recombination in heteroepitaxial CdTe

    Science.gov (United States)

    Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-09-01

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm2 (Vs)-1 and diffusion coefficient D of 17 cm2 s-1. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 105 cm s-1) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 105 cm s-1). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  7. Charge-carrier transport and recombination in heteroepitaxial CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius, E-mail: Darius.Kuciauskas@nrel.gov; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States); Colegrove, Eric; Sivananthan, S. [Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, Illinois 60612 (United States)

    2014-09-28

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  8. Corneal permeation properties of a charged lipid nanoparticle carrier containing dexamethasone

    Science.gov (United States)

    Ban, Junfeng; Zhang, Yan; Huang, Xin; Deng, Guanghan; Hou, Dongzhi; Chen, Yanzhong; Lu, Zhufen

    2017-01-01

    Drug delivery carriers can maintain effective therapeutic concentrations in the eye. To this end, we developed lipid nanoparticles (L/NPs) in which the surface was modified with positively charged chitosan, which engaged in hydrogen bonding with the phospholipid membrane. We evaluated in vitro corneal permeability and release characteristics, ocular irritation, and drug dynamics of modified and unmodified L/NPs in aqueous humor. The size of L/NPs was uniform and showed a narrow distribution. Corneal permeation was altered by the presence of chitosan and was dependent on particle size; the apparent permeability coefficient of dexamethasone increased by 2.7 and 1.8 times for chitosan-modified and unmodified L/NPs, respectively. In conclusion, a chitosan-modified system could be a promising method for increasing the ocular bioavailability of unmodified L/NPs by enhancing their retention time and permeation into the cornea. These findings provide a theoretical basis for the development of effective drug delivery systems in the treatment of ocular disease. PMID:28243093

  9. Thickness dependent charge transfer states and dark carriers density in vacuum deposited small molecule organic photocell

    Science.gov (United States)

    Shekhar, Himanshu; Tzabari, Lior; Solomeshch, Olga; Tessler, Nir

    2016-10-01

    We have investigated the influence of the active layer thickness on the balance of the internal mechanisms affecting the efficiency of copper phthalocyanine - fullerene (C60) based vacuum deposited bulk heterojunction organic photocell. We fabricated a range of devices for which we varied the thickness of the active layer from 40 to 120 nm and assessed their performance using optical and electrical characterization techniques. As reported previously for phthalocyanine:C60, the performance of the device is highly dependent on the active layer thickness and of all the thicknesses we tried, the 40 nm thin active layer device showed the best solar cell characteristic parameters. Using the transfer matrix based optical model, which includes interference effects, we calculated the optical power absorbed in the active layers for the entire absorption band, and we found that this cannot explain the trend with thickness. Measurement of the cell quantum efficiency as a function of light intensity showed that the relative weight of the device internal processes changes when going from 40 nm to 120 nm thick active layer. Electrical modeling of the device, which takes different internal processes into account, allowed to quantify the changes in the processes affecting the generation - recombination balance. Sub gap external quantum efficiency and morphological analysis of the surface of the films agree with the model's result. We found that as the thickness grows the density of charge transfer states and of dark carriers goes up and the uniformity in the vertical direction is reduced.

  10. Properties of Laser-Produced Highly Charged Heavy Ions for Direct Injection Scheme

    CERN Document Server

    Sakakibara, Kazuhiko; Hayashizaki, Noriyosu; Ito, Taku; Kashiwagi, Hirotsugu; Okamura, Masahiro

    2005-01-01

    To accelerate highly charged intense ion beam, we have developed the Direct Plasma Injection Scheme (DPIS) with laser ion source. In this scheme an ion beam from a laser ion source is injected directly to a RFQ linac without a low energy beam transport (LEBT) and the beam loss in the LEBT can be avoided. We achieved high current acceleration of carbon ions (60mA) by DPIS with the high current optimized RFQ. As the next setp we will use heavier elements like Ag, Pb, Al and Cu as target in LIS (using CO2, Nd-YAG or other laser) for DPIS and will examine properties of laser-produced plasma (the relationship of between charge state and laser power density, the current dependence of the distance from the target, etc).

  11. Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Martin, E-mail: martin.weis@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219 (Slovakia); Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@ome.pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-04-21

    Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

  12. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya

    2015-02-12

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

  13. Feedback Direct Injection Current Readout For Infrared Charge-Coupled Devices

    Science.gov (United States)

    Kubo, Kazuya; Wakayama, Hiroyuki; Kajihara, Nobuyuki; Awamoto, Kenji; Miyamoto, Yoshihiro

    1990-01-01

    We are proposing current readout for infrared charge coupled devices (IRCCDs) which can operate at higher temperatures. Feedback direct injection (FDI) consists of a simple amplifier of gain, AFDI was used in a medium-wavelength IRCCD operating at a high temperature. We made a 64-element HgCdTe linear IRCCD using FDI. The device operates at 195 K with an NETD of 0.5 K.

  14. Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

    KAUST Repository

    Mondal, Rajib

    2011-01-01

    A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.

  15. Charge Carrier Processes in Photovoltaic Materials and Devices: Lead Sulfide Quantum Dots and Cadmium Telluride

    Science.gov (United States)

    Roland, Paul

    Charge separation, transport, and recombination represent fundamental processes for electrons and holes in semiconductor photovoltaic devices. Here, two distinct materials systems, based on lead sulfide quantum dots and on polycrystalline cadmium telluride, are investigated to advance the understanding of their fundamental nature for insights into the material science necessary to improve the technologies. Lead sulfide quantum dots QDs have been of growing interest in photovoltaics, having recently produced devices exceeding 10% conversion efficiency. Carrier transport via hopping through the quantum dot thin films is not only a function of inter-QD distance, but of the QD size and dielectric media of the surrounding materials. By conducting temperature dependent transmission, photoluminescence, and time resolved photoluminescence measurements, we gain insight into photoluminescence quenching and size-dependent carrier transport through QD ensembles. Turning to commercially relevant cadmium telluride (CdTe), we explore the high concentrations of self-compensating defects (donors and acceptors) in polycrystalline thin films via photoluminescence from recombination at defect sites. Low temperature (25 K) photoluminescence measurements of CdTe reveal numerous radiative transitions due to exciton, trap assisted, and donor-acceptor pair recombination events linked with various defect states. Here we explore the difference between films deposited via close space sublimation (CSS) and radio frequency magnetron sputtering, both as-grown and following a cadmium chloride treatment. The as-grown CSS films exhibited a strong donor-acceptor pair transition associated with deep defect states. Constructing photoluminescence spectra as a function of time from time-resolved photoluminescence data, we report on the temporal evolution of this donor-acceptor transition. Having gained insight into the cadmium telluride film quality from low temperature photoluminescence measurements

  16. The role of ionic functionality on charge injection processes in conjugated polymers and fullerenes

    Science.gov (United States)

    Weber, Christopher David

    Understanding the fundamental chemistry of conjugated polymers and fullerenes has been the subject of intense research for the last three decades, with the last ten years seeing increased research toward the application of these materials into functional organic electronic devices such as organic photovoltaic devices (OPVs). This field has seen significant advances is cell efficiency in just the last few years (to >10%), in large part due to the development of new donor and acceptor materials, the fine tuning of fabrication parameters to control material nanostructure, as well as the introduction of new interfacial materials such as ionically functionalized conjugated polymers, also known as conjugated polyelectrolytes (CPEs). This dissertation aims to further understand the fundamental chemistry associated with charge injection processes in CPEs and ionically functionalized fullerenes. The role of ionic functionality on electrochemical, chemical, and interfacial charge injection processes is explored. The results presented demonstrate the use of ionic functionality to control the spatial doping profile of a bilayer structure of anionically and cationically functionalized CPEs to fabricate a p-n junction (Chapter II). The role of ionic functionality on chemical charge injection processes is explored via the reaction of polyacetylene and polythiophene based CPEs with molecular oxygen (Chapters III and IV). The results show the dramatic effect of ionic functionality, as well as the specific role of the counterion, on the photooxidative stability of CPEs. The control of reaction pathway via counterion charge density is also explored (Chapter IV) and shows a continuum of reaction pathways based on the charge density of the counter cation. Finally, the role of ionic functionality on interfacial charge injection processes in a functional OPV is explored using a cationically functionalized fullerene derivative (Chapters V and VI). Cell performance increases due to an

  17. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Science.gov (United States)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  18. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya

    2015-08-10

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  19. Classical two-dimensional numerical algorithm for ?-Induced charge carrier advection-diffusion in Medipix-3 silicon pixel detectors

    Science.gov (United States)

    Biamonte, Mason; Idarraga, John

    2013-04-01

    A classical hybrid alternating-direction implicit difference scheme is used to simulate two-dimensional charge carrier advection-diffusion induced by alpha particles incident upon silicon pixel detectors at room temperature in vacuum. A mapping between the results of the simulation and a projection of the cluster size for each incident alpha is constructed. The error between the simulation and the experimental data diminishes with the increase in the applied voltage for the pixels in the central region of the cluster. Simulated peripheral pixel TOT values do not match the data for any value of applied voltage, suggesting possible modifications to the current algorithm from first principles. Coulomb repulsion between charge carriers is built into the algorithm using the Barnes-Hut tree algorithm. The plasma effect arising from the initial presence of holes in the silicon is incorporated into the simulation. The error between the simulation and the data helps identify physics not accounted for in standard literature simulation techniques.

  20. The Study Of Charge Carrier Transport On The Calamitic Liquid Crystals `` 5, 5'-Di-(Alkyl-Pyridin-Yl) - 2' Bithiophenes''

    Science.gov (United States)

    Shakya, Naresh; Pokhrel, Chandra; Ellman, Brett; Getmanenko, Yulia; Twieg, Robert

    2010-03-01

    The hole and electron mobilities in both types of calamitic liquid crystals C9 [5,5'-Di-(5-n-nonyl-pyridin-2-yl)-2,2'-bithiophenes] and C10 [5,5'-Di-(5-n-decyl-pyridin-2-yl)-2,2'-bithiophenes] were studied. The charge carrier mobilities were strongly electric field dependent. The mobilities decreased continuously with increase in the electric field up to a certain value, after which it became constant. Both types of charge carrier mobilities are independent of the temperature over our temperature range. The qualitative feature of our results could be tentatively explained by the Monte--Carlo modeling proposed by H Bassler. However, the results require further study for better understanding.

  1. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-04-07

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  2. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl

    2013-01-31

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  3. Analysis of the effects of constant-current Fowler-Nordheim-tunneling injection with charge trapping inside the potential barrier

    Science.gov (United States)

    Lopez-Villanueva, J. A.; Jimenez-Tejada, J. A.; Cartujo, P.; Bausells, J.; Carceller, J. E.

    1991-10-01

    Charge trapping and the generation of interface traps in thermally grown SiO2 and its interface with silicon, produced by Fowler-Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been analyzed. This has afforded information about the position of the charge trapped in the oxide. No increase in the interface-trap density has been produced immediately after injection at 77 K, but, as the temperature is raised after injection, the growing of a peak of interface states has been observed. This phenomenon had been reported to be produced as a consequence of a previous hole trapping but, in this case, this intermediate stage of positive-charge building has not been observed. This effect is discussed, taking into account published models.

  4. Insights from transport modeling of unusual charge carrier behavior of PDTSiTzTz:PC71BM bulk heterojunction materials

    Science.gov (United States)

    Slobodyan, Oleksiy; Moench, Sarah; Liang, Kelly; Danielson, Eric; Holliday, Bradley; Dodabalapur, Ananth

    2015-03-01

    Development of hole-transporting copolymers for use in bulk heterojunctions (BHJs) has significantly improved organic solar cell performance. Despite advances on the materials side, the physics of charge carrier transport remains unsettled. Intrigued by its ability to maintain high fill factors in thick active layers, we studied the copolymer poly[2-(5-(4,4-dioctyl-4H-silolo[3,2-b:4,5-b’]dithiophen-2-yl)-3-tetradecylthiophen-2-yl)- 5-(3-tetradecylthiophen-2-yl)thiazolo[5,4-d]thiazole] (PDTSiTzTz) blended with PC71BM. Results show mobilities which are carrier-concentration-dependent and characterized by a negative Poole-Frenkel effect. Such behavior is not described by current carrier transport models. Established transport mechanisms like multiple-trap-and-release or variable range hopping yield dependence of mobility on carrier concentration. However, a more basic model like Gaussian distribution model (GDM) is needed to produce the negative Poole-Frenkel effect, though GDM cannot describe carrier-concentration-dependent mobility. We have combined key aspects of existing models to create a unified transport model capable of describing phenomena observed in PDTSiTzTz:PC71BM. This model can be used to address open questions about transport physics of organic BHJ materials. U.S. Department of Energy, Award Number DE-SC0001091.

  5. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released t

  6. Calibration by precise charge injection of a sub-detector of CMS; Calibration par injection de charge du calorimetre electromagnetique de CMS

    Energy Technology Data Exchange (ETDEWEB)

    Yong-Wook Baek

    2001-01-26

    This thesis was carried out within the framework of the international collaboration which has the responsibility of the experience CMS (Compact Muon Solenoid) on LHC, at CERN. The physics of the fundamental particles which will be explored by this experiment is described within the standard model. The configuration of sub-detector of CMS is briefly described, with a particular weight on the read-out chain of the electromagnetic calorimeter. The work carried out to calibrate this chain by a precise charge injection at the input of preamplifiers is described. The 4 integrated circuits CTRL, TPLS, DAC, and injector which will constitute the components of this chain of calibration are described. The circuit of injection, which is the main circuit in this project, was imagined and developed at the laboratory in DMILL technology. This injector generates a signal which has a form identical to the signal of the detector. The measurements on the linearity of the injectors are presented. In order to know its behavior under real conditions (flow of neutrons {approx} 2 x 10{sup 13} neutrons/cm{sup 2}/10 years) where this circuit is installed in detector CMS, we submitted the prototypes of injector to irradiation and the results are summarized. The research and development on this circuit produced an integrated circuit hardened to irradiations, whose variation of slope is lower than 0.25% for an integrated of 2 x 10{sup 13} neutrons/cm{sup 2} and indestructible under 10{sup 15} neutrons/cm{sup 2}. This circuit has satisfactory qualities to be assembled on the electronic card which will treat the data of calorimeter ECAL of CMS. (author)

  7. WFC3/UVIS Charge Injection Behavior: Results of an Initial Test

    Science.gov (United States)

    Bushouse, H.; Baggett, S.; Gilliland, R.; Noeske, K.; Petro, L.

    2011-01-01

    The WFC3 CCD Charge Injection (CI) capability has been tested on-orbit in Cycle18 calibration program 12348. Bias, dark, and science exposures of star cluster NGC 104 have been obtained in all commandable CI modes. Super-bias images were constructed for each CI mode and used to calibrate the NGC 104 exposures. Analysis has shown that the CI mode is working as expected, producing injected signals of ~15000 e-/pix. The CI signal is stable and repeatable to a level of a few e-/pix. CI rows in calibrated science images have mean residual signals of a few e-/pix with 1-sigma noise of ~18 e-/pix. Noise in science images in the rows in between CI varies from 3.5-6.5 e-/pix, compared to ~3.4 e-/pix in non-CI images.

  8. Injectable biodegradable carriers for the delivery of therapeutic agents and tissue engineering

    OpenAIRE

    Levato, Riccardo

    2015-01-01

    The design of smart biomaterial devices plays a key role to improve the way conventional therapies are being delivered, and to promote the development of new approaches for advanced therapies, such as regenerative medicine and targeted drug release. Injectable biodegradable materials, such as those consisting of suspensions of polymeric particles, are highly versatile devices that can be delivered through minimally-invasive injections. The physic-chemical properties of the particles can be en...

  9. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    CERN Document Server

    Smolyar, V A; Eremin, V V

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well

  10. Infrared study of charge injection in organic field-effect transistors

    Science.gov (United States)

    Li, Zhiqiang

    2008-03-01

    We present a systematic infrared (IR) spectroscopic study of charge injection in organic field-effect transistors (FET). These experiments have revealed new unexpected aspects of both polymers and molecular crystals. IR spectromicroscopy was employed to image the charges in poly(3-hexylthiophene) (P3HT) FETs. The charge density profile in the conducting channel uncovers a density-dependent mobility in P3HT due to disorder effects. Our IR studies of single crystal rubrene based FETs show that charge transport in these devices at room temperature is governed by light quasiparticles in molecular orbital bands. This result is at variance with the common beliefs of polaron formation in molecular solids. The above experiments have demonstrated the unique potential of IR spectroscopy for investigating physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices. This work is in collaboration with G. M. Wang, D. Moses, A. J. Heeger (UCSB), V. Podzorov, M.E. Gershenson (Rutgers), Z. Hao, M. C. Martin (ALS), N. Sai, A. D. Meyertholen, M. M. Fogler, M. Di Ventra and D. N. Basov (UCSD).

  11. Demonstration of the difference Casimir force for samples with different charge carrier densities

    CERN Document Server

    Chen, F; Mohideen, U; Mostepanenko, V M

    2006-01-01

    A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good agreement is found. Our experiment demonstrates that by changing the carrier density of the semiconductor plate by several orders of magnitude it is possible to modify the Casimir interaction. This result may find applications in nanotechnology.

  12. Formation of polaron pairs and time-resolved photogeneration of free charge carriers in π-conjugated polymers

    Science.gov (United States)

    Frankevich, Eugene; Ishii, Hisao; Hamanaka, Yasushi; Yokoyama, Takahiro; Fuji, Akihiko; Li, Sergey; Yoshino, Katsumi; Nakamura, Arao; Seki, Kazuhiko

    2000-07-01

    We have performed in the present work time-resolved experiments on poly(3-dodecyl-thiophene) (P3DDT) and poly(2,5-dioctyloxy-p-phenylene vinylene) (OO-PPV) films by directly probing the formation of charge carriers responsible for the cw photoconductivity within the time domain of -10 ps to 1 ns. Laser light pulses of 400 nm wavelength, 150 fs width, induced photoconductivity in a sample with a frequency 1 kHz. Red 800 nm light pulses delayed in respect to blue ones were revealed to affect the photoconductivity. The effect of the second pulses increased with the delay time. Red light induced changes of the photoconductivity were positive in OO-PPV, and negative in P3DDT. These results are rationalized as an evidence of delayed not immediate formation of free charge carriers. The carriers seem to be formed within 10 ps after the pumping pulse. A mechanism of formation of free polarons from polaron pair is suggested, which has permitted to explain main feature of the results including different signs of the effect of the red light in different polymers.

  13. Interference of spin-, charge- and orbital degrees of freedom in low-carrier rare earth compounds, investigated by NMR

    Science.gov (United States)

    Wada, S.

    2006-05-01

    In rare earth compounds, the concentration of charge carriers is known to strongly influence the nature, and the charge carriers caused by valence fluctuations result in a complete suppression of the magnetic state, as typically observed for YbInCu4. The notable exception has been reported for the cubic (NaCl structure) TmX and YbX families with low carrier, that exhibits antiferro-magnetic (AFM) order at low temperatures. Among these families, TmTe and YbSb with degenerate low-lying multiplets have an additional transition of antiferro-quadrupolar (AFQ) orderings. To elucidate the interplay between the electronic transport and magnetic and/or orbital phenomena close to a semiconductor-to-metal transition, we have carried NMR measurements of 63Cu in YbInCu4, 125Te in TmTe, and 121Sb in YbSb down to 1.2 K and the implication of NMR findings is discussed in terms of the CEF splitting.

  14. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  15. Multi-THz spectroscopy of mobile charge carriers in P3HT:PCBM on a sub-100 fs time scale

    DEFF Research Database (Denmark)

    Cooke, David G.; Krebs, Frederik C; Jepsen, Peter Uhd

    2013-01-01

    The dynamics of mobile charge carrier generation in polymer bulk heterojunction films is of vital importance to the development of more efficient organic photovoltaics. As with conventional semiconductors, the optical signatures of mobile carriers lie in the far-infrared (1-30 THz) although...

  16. Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Elmasry, F. [Graduate School of Science, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Okubo, S. [Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Ohta, H., E-mail: hoht@kobe-u.ac.jp [Graduate School of Science, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai-cho, Nada, Kobe 657-8501 (Japan); Fujiwara, Y. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-05-21

    Er-concentration effect in GaAs;Er,O containing charge carriers (n-type, high resistance, p-type) has been studied by X-band Electron spin resonance (ESR) at low temperature (4.7 K < T < 18 K). Observed A, B, and C types of ESR signals were identical to those observed previously in GaAs:Er,O without carrier. The local structure around Er-2O centers is not affected by carriers because similar angular dependence of g-values was observed in both cases (with/without carrier). For temperature dependence, linewidth and lineshape analysis suggested the existence of Er dimers with antiferromagnetic exchange interaction of about 7 K. Moreover, drastic decrease of ESR intensity for C signal in p-type sample was observed and it correlates with the decrease of photoluminescence (PL) intensity. Possible model for the Er-2O trap level in GaAs:Er,O is discussed from the ESR and PL experimental results.

  17. Electrically induced phase transition in α -(BEDT-TTF)2I3 : Indications for Dirac-like hot charge carriers

    Science.gov (United States)

    Peterseim, T.; Ivek, T.; Schweitzer, D.; Dressel, M.

    2016-06-01

    The two-dimensional organic conductor α -(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO=135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from a low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO, the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T >TCO . Well into the insulating state, however, at T =80 K , the spectral response evidences a completely different electronically induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge carriers with a linear dispersion of the electronic bands found in α -(BEDT-TTF)2I3 at high pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.

  18. Controlling the efficiency of spin injection into graphene by carrier drift

    NARCIS (Netherlands)

    Jozsa, C.; Popinciuc, M.; Tombros, N.; Jonkman, H. T.; van Wees, B. J.

    2009-01-01

    Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in cobalt/aluminu

  19. Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

    Science.gov (United States)

    Halley, D.; Norga, G.; Guiller, A.; Fompeyrine, J.; Locquet, J. P.; Drechsler, U.; Siegwart, H.; Rossel, C.

    2003-11-01

    The carrier mobility μ in low-doped silicon-on-insulator wafers is found to be strongly modified by the deposition of a thin ZrO2 or SrZrO3 top layer grown by molecular-beam epitaxy. Pseudo-metal-oxide-semiconductor field-effect-transistor measurements performed on several samples clearly show a correlation between μ and the density of interface traps (Dit) at the Si/buried-oxide interface. The reduction of Dit by a forming gas anneal leads to a corresponding increase in mobility. Moreover, the high-k/Si interface can contribute to the total drain current via the creation of an inversion channel induced by trapped charges in the high-k layer. Using Hall-effect measurements, we took advantage of this additional current to evaluate the carrier mobility at the high-k/Si interface, without the need of a top gate electrode.

  20. Controlled Electron Injection into Plasma Accelerators and SpaceCharge Estimates

    Energy Technology Data Exchange (ETDEWEB)

    Fubiani, Gwenael G.J. [Univ. of California, Berkeley, CA (United States)

    2005-09-01

    Plasma based accelerators are capable of producing electron sources which are ultra-compact (a few microns) and high energies (up to hundreds of MeVs) in much shorter distances than conventional accelerators. This is due to the large longitudinal electric field that can be excited without the limitation of breakdown as in RF structures.The characteristic scale length of the accelerating field is the plasma wavelength and for typical densities ranging from 1018 - 1019 cm-3, the accelerating fields and scale length can hence be on the order of 10-100GV/m and 10-40 μm, respectively. The production of quasimonoenergetic beams was recently obtained in a regime relying on self-trapping of background plasma electrons, using a single laser pulse for wakefield generation. In this dissertation, we study the controlled injection via the beating of two lasers (the pump laser pulse creating the plasma wave and a second beam being propagated in opposite direction) which induce a localized injection of background plasma electrons. The aim of this dissertation is to describe in detail the physics of optical injection using two lasers, the characteristics of the electron beams produced (the micrometer scale plasma wavelength can result in femtosecond and even attosecond bunches) as well as a concise estimate of the effects of space charge on the dynamics of an ultra-dense electron bunch with a large energy spread.

  1. Construction of a Direct Water-Injected Two-Stroke Engine for Phased Direct Fuel Injection-High Pressure Charging Investigations

    Science.gov (United States)

    Somsel, James P.

    1998-01-01

    The development of a water injected Orbital Combustion Process (OCP) engine was conducted to assess the viability of using the powerplant for high altitude NASA aircraft and General Aviation (GA) applications. An OCP direct fuel injected, 1.2 liter, three cylinder, two-stroke engine has been enhanced to independently inject water directly into the combustion chamber. The engine currently demonstrates low brake specific fuel consumption capability and an excellent power to weight ratio. With direct water injection, significant improvements can be made to engine power, to knock limits/ignition advance timing, and to engine NO(x) emissions. The principal aim of the testing was to validate a cyclic model developed by the Systems Analysis Branch at NASA Ames Research Center. The work is a continuation of Ames' investigations into a Phased Direct Fuel Injection Engine with High Pressure Charging (PDFI-ITPC).

  2. Perturbation and coupling of microcavity plasmas through charge injected into an intervening microchannel

    Science.gov (United States)

    Wang, Y.; Ni, J. H.; Zhong, S.; Cai, S.; Zhang, X.; Liu, C.; Park, S.-J.; Eden, J. G.

    2016-11-01

    Coupling between two microcavity plasmas in a symmetric, microfabricated dielectric barrier structure has been observed by injecting charge from one of the plasmas into an intervening microchannel. Periodic modulation of the electric field strength in the injector (or electron "donor") cavity has the effect of deforming the acceptor microplasma which exhibits two distinct and stable spatiotemporal modes. Throughout the time interval in which the two microplasmas are coupled electrostatically, the acceptor plasma is elongated and displaced by 75-100 μm (˜30% of its diameter) in the direction of the microchannel. The depletion of charge in the microchannel results in an immediate transition of the second (acceptor) microplasma to an equilibrium state in which the plasma is azimuthally symmetric and centered within its microcavity. Switching between these two spatial modes requires a shift (in the plasma centroid) of ˜80 μm in <50 ns which corresponds to a velocity of 1.6 km/s. Precise control of this plasma phase transition through device fabrication, and modulation of the donor plasma electric field, suggest applications of this plasma coupling and charge transport mechanism to signal processing, photonics, and electromagnetics.

  3. Charge carrier motion in disordered conjugated polymers: a multiscale ab-initio study

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    We developed an ab-initio multiscale method for simulation of carrier transport in large disordered systems, based on direct calculation of electronic states and electron-phonon coupling constants. It enabled us to obtain the never seen before rich microscopic details of carrier motion in conjugated polymers, which led us to question several assumptions of phenomenological models, widely used in such systems. The macroscopic mobility of disordered poly(3- hexylthiophene) (P3HT) polymer, extracted from our simulation, is in agreement with experimental results from the literature.

  4. Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

    CERN Document Server

    Jansen, Hendrik; Pernegger, Heinz

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  5. Synthesis, characterization of novel injectable drug carriers and the antitumor efficacy in mice bearing Sarcoma-180 tumor.

    Science.gov (United States)

    Guo, Wen-xun; Huang, Kai-xun; Tang, Rong; Xu, Hui-bi

    2005-10-20

    New unsaturated polyesters of poly(fumaric acid-glycol-dodecanedioic acid) P(FA-GLY-DDDA) copolymers, poly(fumaric acid-glycol-brassylic acid) P(FA-GLY-BA) copolymers, poly(fumaric acid-glycol-tetradecanedioic acid) P(FA-GLY-TA) copolymers and poly(fumaric acid-glycol-pentadecanedioic acid) P(FA-GLY-PA) copolymers were prepared by melt polycondensation of the corresponding mixed monomers: fumaric acid, glycol and one of C(12-15) dibasic acids. The copolymers were characterized by FT-IR, gel permeation chromatography (GPC), and the surface structure of unsaturated polyesters after solidify were studied by atomic force microscopy (AFM). The molecular structure and composition of the unsaturated polyesters were determined by 1H NMR spectroscopy. In vitro studies showed that some of the copolymers are degradable in phosphate buffer at 37 degrees C and have properly drug release rate as drug carriers. The biocompatibility of P(FA-GLY-DDDA) and P(FA-GLY-BA) copolymers under mice skin was also evaluated, macroscopic observation and microscopic analysis demonstrated that the copolymer is biocompatible and well tolerated in vivo. Antitumor efficacy of P(FA-GLY-DDDA) copolymers and P(FA-GLY-BA) copolymers containing 5% adriamycin hydrochloride (ADM) in mice bearing Sarcoma-180 tumor exhibited increased volume doubling time (VDT) (22+/-1.5 days and 24+/-2.5 days) compared to plain subcutaneous injection of ADM (7+/-0.9 days). The antitumor efficacy of injecting P(FA-GLY-DDDA)-ADM inside tumor twice intervened in 22 days exhibited an especially increased cytotoxic effect as revealed by increased VDT (33+/-2.5 days), and the antitumor efficacy of injecting P(FA-GLY-BA)-ADM inside tumor twice intervened in 24 days exhibited an especially increased cytotoxic effect as revealed by increased VDT (35+/-1.5 days). The studies suggested that P(FA-GLY-DDDA) copolymers and P(FA-GLY-BA) copolymers as effective and injectable carriers for antineoplastic drug like adriamycin hydrochloride

  6. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, Thangavel, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp; Ikeda, Susumu; Kumashiro, Ryotaro [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Shimotani, Hidekazu, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp; Shang, Hui [Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan); Tanigaki, Katsumi, E-mail: kanagasekaran@gmail.com, E-mail: Shimotani@m.tohoku.ac.jp, E-mail: tanigaki@m.tohoku.ac.jp [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Department of Physics, Graduate School of Science, Tohoku University, 6-3 Aoba, Aramaki, Aoba, Sendai 980-8578 (Japan)

    2015-07-27

    Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

  7. Effect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier Injection

    Directory of Open Access Journals (Sweden)

    B. Mardiana

    2012-01-01

    Full Text Available Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS technologies in electronics integrated circuit. Silicon photonics has offers great potential to overcome this critical bottleneck due to the advantages of optical interconnects. Silicon-based optical micro-ring resonator is promising basic element of future electronic-photonic integrated circuits because of its wide applications on photonic devices such as modulator, switch and sensor. Approach: This study highlights the study of the free carrier injection effect on the active SOI micro-ring resonator. The effect of the free carrier injection on micro-ring resonator is evaluated by varying the p+ and n+ doping position. Device performances are predicted using numerical modeling software 2D SILVACO as well as Finite Difference Time Domain (FDTD simulation software, RSOFT. Results: The results show that the refractive index change increases as the p+ and n+ doping position become closer to the rib waveguide. A shift in resonant wavelength of around 2 and 3 nm was is predicted at 0.9V drive forward voltage for 0.5 and 1.0 μm gap distance between p+ and n+ doping regions and the sidewall of the rib waveguide. It is also shown that 10 and 9.2 dB maximum change of the output response obtained through the output of the transmission spectrum of the device with gap 0.5 and 1.0 μm. Conclusion: The closer distance between p+ and n+ doping regions and the rib waveguide has optimal shift of resonance wavelength and better extinction ratio of transmission spectrum.

  8. Computational fluid dynamics analysis of cold plasma carrier gas injected into a fluid using level set method.

    Science.gov (United States)

    Shahmohammadi Beni, Mehrdad; Yu, K N

    2015-12-14

    A promising application of plasma medicine is to treat living cells and tissues with cold plasma. In cold plasmas, the fraction of neutrals dominates, so the carrier gas could be considered the main component. In many realistic situations, the treated cells are covered by a fluid. The present paper developed models to determine the temperature of the fluid at the positions of the treated cells. Specifically, the authors developed a three-phase-interaction model which was coupled with heat transfer to examine the injection of the helium carrier gas into water and to investigate both the fluid dynamics and heat transfer output variables, such as temperature, in three phases, i.e., air, helium gas, and water. Our objective was to develop a model to perform complete fluid dynamics and heat transfer computations to determine the temperature at the surface of living cells. Different velocities and plasma temperatures were also investigated using finite element method, and the model was built using the comsol multiphysics software. Using the current model to simulate plasma injection into such systems, the authors were able to investigate the temperature distributions in the domain, as well as the surface and bottom boundary of the medium in which cells were cultured. The temperature variations were computed at small time intervals to analyze the temperature increase in cell targets that could be highly temperature sensisitve. Furthermore, the authors were able to investigate the volume of the plasma plume and its effects on the average temperature of the medium layer/domain. Variables such as temperature and velocity at the cell layer could be computed, and the variations due to different plume sizes could be determined. The current models would be very useful for future design of plasma medicine devices and procedures involving cold plasmas.

  9. Charge carrier photogeneration and recombination in ladder-type poly(para-phenylene): Interplay between impurities and external electric field

    Science.gov (United States)

    Gulbinas, V.; Hertel, D.; Yartsev, A.; Sundström, V.

    2007-12-01

    Charge carrier generation and decay in m -LPPP polymer films were examined by means of femtosecond transient absorption spectroscopy in the time window of 100fs-15ns . Two modes of polaron formation with distinct behavior were identified, impurity induced in the absence of an external electric field and electric field induced in pristine film. While field induced charge generation is relatively slow, occurring throughout the excited state lifetime, the rate of impurity induced charge generation is much faster and depends on excitation wavelength; it occurs on the several hundred femtosecond time scale under excitation within the main absorption band, but excitation into the red wing of the absorption band results in charge generation within less than 100fs . Polaron decay through geminate electron-hole recombination occurs with widely distributed lifetimes, from ˜0.8ns to microseconds; the polarons characterized by the shortest decay time have a redshifted absorption spectrum (as compared to more long-lived polarons) and are attributed to tightly bound polaron pairs.

  10. MATLAB analysis and computation of OLED charge injection model%OLED器件电荷注入模型的MATLAB分析计算

    Institute of Scientific and Technical Information of China (English)

    王忆锋; 唐利斌; 岳清

    2011-01-01

    The model of charge injection from a metallic electrode of organic light emitting diodes(OLED) into a random hopping system,e. g. ,a conjugated polymer or a molecularly doped polymer,is presented in this paper. It encompasses injection of a charge carrier from the Fermi level of the electrode into tail states of the distribution of hopping states of the dielectric followed by either return of the charge cartier to the electrode or diffusive escape from the attractive image potential. The latter process resembles Onsager-type geminate pair dissociation in one dimension. The model treats the injection current as a function of electric field,temperature and energetic width of the distribution of hopping states. The concept of relative current density of OLED device is proposed. The methods and skills of analysis and computation of the model with MATLAB is introduced.%介绍了电荷从OLED金属电极注入到一个随机跳跃体系(例如配对聚合物或分子掺杂聚合物)的模型.它包括电荷载流子从电极的费米能级到介质跳跃态分布尾态之间的注入,其结果可能是电荷载流子返回到电极,或者是受到镜像引力势的作用而形成扩散逃逸.后者类似于一维Onsager型激子解离.该模型将注入电流处理为电场、温度以及跳跃态分布能量宽度的函数.提出了OLED器件中相对电流密度的概念.介绍了用MATLAB软件分析计算该模型的方法和技巧.

  11. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Hyun-Sik; Khang, Dahl-Young, E-mail: dykhang@yonsei.ac.kr

    2015-08-31

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s.

  12. Tungsten-based nanomaterials (WO3 & Bi2WO6): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

    Science.gov (United States)

    Girish Kumar, S.; Koteswara Rao, K. S. R.

    2015-11-01

    Heterogeneous photocatalysis is an ideal green energy technology for the purification of wastewater. Although titania dominates as the reference photocatalyst, its wide band gap is a bottleneck for extended utility. Thus, search for non-TiO2 based nanomaterials has become an active area of research in recent years. In this regard, visible light absorbing polycrystalline WO3 (2.4-2.8 eV) and Bi2WO6 (2.8 eV) with versatile structure-electronic properties has gained considerable interest to promote the photocatalytic reactions. These materials are also explored in selective functional group transformation in organic reactions, because of low reduction and oxidation potential of WO3 CB and Bi2WO6 VB, respectively. In this focused review, various strategies such as foreign ion doping, noble metal deposition and heterostructuring with other semiconductors designed for efficient photocatalysis is discussed. These modifications not only extend the optical response to longer wavelengths, but also prolong the life-time of the charge carriers and strengthen the photocatalyst stability. The changes in the surface-bulk properties and the charge carrier transfer dynamics associated with each modification correlating to the high activity are emphasized. The presence of oxidizing agents, surface modification with Cu2+ ions and synthesis of exposed facets to promote the degradation rate is highlighted. In depth study on these nanomaterials is likely to sustain interest in wastewater remediation and envisaged to signify in various green energy applications.

  13. Hall effect in the low charge-carrier density ferromagnet UCo{sub 0.5}Sb{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tran, V.H.; Troc, R.; Bukowski, Z. [W. Trzebiatowski Institute for Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wroclaw (Poland); Paschen, S.; Steglich, F. [Max-Planck Institut fuer Chemische Physik fester Stoffe, 01187 Dresden (Germany)

    2006-01-01

    The Hall coefficient R {sub H} of ferromagnetic UCo{sub 0.5}Sb{sub 2} (T {sub C}=64.5 K) has been measured on a single crystal in the temperature range 2-300 K and in magnetic fields up to 7 T. The values of the normal R{sub 0} and anomalous R{sub s} coefficients were estimated by comparing R{sub H}(B) with magnetisation M (B) data. The charge carrier concentration is found to decrease rapidly when the system undergoes a transition to the ferromagnetic ordered state. The charge mobility appears to fall down by as much as two orders of magnitude for temperatures from 20 K to 2 K. We ascribe this behaviour to an enormous decrease of the carrier collision time. The temperature dependencies of the Hall mean free path and mobility can be consistently interpreted within the 2D-weak localization feature. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Absorption of Light by Free Charge Carriers in the Crystalline CdS Under Intense Electron Irradiation

    Science.gov (United States)

    Kulikov, V. D.; Yakovlev, V. Yu.

    2016-09-01

    The process of light absorption by free electrons in the crystalline cadmium sulfide under irradiation by a nanosecond electron beam with the current density of 8-100 A/cm2 is studied. A superlinear increase in optical absorption is observed if the beam current density is increased from ~8 to 12 A/cm2. The nature of light absorption by thermalized electrons corresponds to the scattering on lattice defects. An increase in the exponent of the power dependence of light absorption on the wavelength with increasing beam current density is associated with the single and double ionization of donors and acceptors. It is concluded that accumulation of charge carriers occurs without capture by traps due to their impact ionization by secondary electrons, whose energy in the thermalization stage is comparable with the band gap of the crystal. According to the results of calculations, the capture cross section of electrons by holes at quadratic recombination is ~10-20 cm2, the Auger recombination coefficient is ~10-31 cm6•s-1, and the charge carrier concentration is ~1.3•1018-1.5•1019 cm-3.

  15. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Science.gov (United States)

    Dell'Erba, Giorgio; Luzio, Alessandro; Natali, Dario; Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu; Noh, Yong-Young; Caironi, Mario

    2014-04-01

    Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10-4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  16. Development of a Kingdon ion trap system for trapping externally injected highly charged ions.

    Science.gov (United States)

    Numadate, Naoki; Okada, Kunihiro; Nakamura, Nobuyuki; Tanuma, Hajime

    2014-10-01

    We have developed a Kingdon ion trap system for the purpose of the laboratory observation of the x-ray forbidden transitions of highly charged ions (HCIs). Externally injected Ar(q+) (q = 5-7) with kinetic energies of 6q keV were successfully trapped in the ion trap. The energy distribution of trapped ions is discussed in detail on the basis of numerical simulations. The combination of the Kingdon ion trap and the time-of-flight mass spectrometer enabled us to measure precise trapping lifetimes of HCIs. As a performance test of the instrument, we measured trapping lifetimes of Ar(q+) (q = 5-7) under a constant number density of H2 and determined the charge-transfer cross sections of Ar(q+)(q = 5, 6)-H2 collision systems at binary collision energies of a few eV. It was confirmed that the present cross section data are consistent with previous data and the values estimated by some scaling formula.

  17. Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

    Institute of Scientific and Technical Information of China (English)

    Chen Jian-Jun; Chen Shu-Ming; Liang Bin; He Yi-Bai; Chi Ya-Qing; Deng Ke-Feng

    2011-01-01

    Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose (TID) effect.However,their capability of resisting the hot carrier effect (HCE) has also been proven to be very weak.In this paper,the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail,and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation.The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology.In addition,the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers (the annular source nMOSFETs) are also studied to provide a possible alternative for the designers.

  18. Apparatus for measuring the flow rate of a heat carrier and injection wells

    Energy Technology Data Exchange (ETDEWEB)

    Putilov, M.F.; Bar-Sliva, V.I.; Dichenko, M.A.; Nikiforov, Yu.V.; Petrov, A.I.; Turchaninov, Yu.N.

    1981-01-01

    A device is proposed for measuring the flow rate of the heat carrier in N wells, which contains a housing, turbine ( a permanent magnet is attached to the shaft eccentrically), a reed relay, a secondary converter and a power supply. In order to expand the measurement range by developing torque in the turbine it is equipped with additional reed relay, which is installed diametrically opposite the primary reed relay, and it also has a breaking unit made in the form of an additional permanent magnet placed on the turbine shaft. There was also a torodial core with a two-section winding and a winding power supply polarity switch in the frame. The primary and secondary reed relays are connected to the winding power supply polarity switch circuit. It in turn is connected to the secondary converter. In order to assure the possibility of changing the slope of the flow rate converter into a number of turbine revolutions it is equipped with a frequency to voltage converter with a setting mechanism. The frequency to voltage converter input is connected to the secondary converter, and the output is connected to the power supply source.

  19. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  20. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    Science.gov (United States)

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-05

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc.

  1. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers

    Science.gov (United States)

    Sun, Baichuan; Barnard, Amanda S.

    2016-07-01

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove

  2. Imaging the photoinduced charge injection in CdS/TiO2 nanoparticles by the sequential fluorescence mapping method

    Science.gov (United States)

    Frederice, Rafael; Lencione, Diego; Gehlen, Marcelo H.

    2017-03-01

    The combination of a sensitizer and TiO2 nanoparticles forming a photocatalytic material is a central issue in many fields of applied photochemistry. The charge injection of emissive sensitizers into the conduction band of the semiconductor TiO2 may form a photoactive region that becomes dark, or it has a very low emission signal due to the generation of sensitizer radicals. However, by sequential coupling of a selected photoredox dye, such as resazurin, the dark region may become fluorescent at the interfaces where the charge injection has taken place due to the concomitant formation of fluorescent resorufin by cascade electron transfer. Using this strategy and a total internal reflection fluorescence microscopy (TIRFM) image, the charge injection in TiO2/CdS and SiO2/TiO2/CdS nanoparticles is investigated The method allows the charge injection efficiency of the excited CdS into TiO2 to be evaluated qualitatively, explaining the differences observed for these photocatalytic materials in H2 generation.

  3. Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite

    Science.gov (United States)

    Dittrich, Th.; Lang, F.; Shargaieva, O.; Rappich, J.; Nickel, N. H.; Unger, E.; Rech, B.

    2016-08-01

    The diffusion or transport lengths of photo-generated charge carriers in CH3NH3PbI3 layers (thickness up to 1 μm) and powders have been directly measured with high accuracy by modulated surface photovoltage after Goodman. The values of the diffusion lengths of photo-generated charge carriers ranged from 200 nm to tenths of μm. In thin CH3NH3PbI3 layers, the transport lengths corresponded to the layer thickness whereas in thicker layers and in crystallites of CH3NH3PbI3 powders the grain size limited the diffusion length. For grains, the diffusion length of photo-generated charge carriers depended on the measurement conditions.

  4. Charge injection in solution-processed organic field-effect transistors: physics, models and characterization methods.

    Science.gov (United States)

    Natali, Dario; Caironi, Mario

    2012-03-15

    A high-mobility organic semiconductor employed as the active material in a field-effect transistor does not guarantee per se that expectations of high performance are fulfilled. This is even truer if a downscaled, short channel is adopted. Only if contacts are able to provide the device with as much charge as it needs, with a negligible voltage drop across them, then high expectations can turn into high performances. It is a fact that this is not always the case in the field of organic electronics. In this review, we aim to offer a comprehensive overview on the subject of current injection in organic thin film transistors: physical principles concerning energy level (mis)alignment at interfaces, models describing charge injection, technologies for interface tuning, and techniques for characterizing devices. Finally, a survey of the most recent accomplishments in the field is given. Principles are described in general, but the technologies and survey emphasis is on solution processed transistors, because it is our opinion that scalable, roll-to-roll printing processing is one, if not the brightest, possible scenario for the future of organic electronics. With the exception of electrolyte-gated organic transistors, where impressively low width normalized resistances were reported (in the range of 10 Ω·cm), to date the lowest values reported for devices where the semiconductor is solution-processed and where the most common architectures are adopted, are ∼10 kΩ·cm for transistors with a field effect mobility in the 0.1-1 cm(2)/Vs range. Although these values represent the best case, they still pose a severe limitation for downscaling the channel lengths below a few micrometers, necessary for increasing the device switching speed. Moreover, techniques to lower contact resistances have been often developed on a case-by-case basis, depending on the materials, architecture and processing techniques. The lack of a standard strategy has hampered the progress of the

  5. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Energy Technology Data Exchange (ETDEWEB)

    Dell' Erba, Giorgio; Natali, Dario [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano (Italy); Luzio, Alessandro; Caironi, Mario, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu [Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Noh, Yong-Young, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715 (Korea, Republic of)

    2014-04-14

    Ambipolar semiconducting polymers, characterized by both high electron (μ{sub e}) and hole (μ{sub h}) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μ{sub h} = 0.29 cm{sup 2}/V s and μ{sub e} = 0.001 cm{sup 2}/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μ{sub e} = 0.12 cm{sup 2}/V s and μ{sub h} = 8 × 10{sup −4} cm{sup 2}/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  6. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  7. Charge Carriers in Planar and Meso-Structured Organic-Inorganic Perovskites: Mobilities, Lifetimes, and Concentrations of Trap States.

    Science.gov (United States)

    Hutter, Eline M; Eperon, Giles E; Stranks, Samuel D; Savenije, Tom J

    2015-08-06

    Efficient solar cells have been obtained using thin films of solution-processed organic-inorganic perovskites. However, there remains limited knowledge about the relationship between preparation route and optoelectronic properties. We use complementary time-resolved microwave conductivity (TRMC) and photoluminescence (PL) measurements to investigate the charge carrier dynamics in thin planar films of CH3NH3PbI(3-x)Cl(x), CH3NH3PbI3, and their meso-structured analogues. High mobilities close to 30 cm(2)/(V s) and microsecond-long lifetimes are found in thin films of CH3NH3PbI(3-x)Cl(x), compared to lifetimes of only a few hundred nanoseconds in CH3NH3PbI3 and meso-structured perovskites. We describe our TRMC and PL experiments with a global kinetic model, using one set of kinetic parameters characteristic for each sample. We find that the trap density is less than 5 × 10(14) cm(-3) in CH3NH3PbI(3-x)Cl(x), 6 × 10(16) cm(-3) in the CH3NH3PbI3 thin film and ca. 10(15) cm(-3) in both meso-structured perovskites. Furthermore, our results imply that band-to-band recombination is enhanced by the presence of dark carriers resulting from unintentional doping of the perovskites. Finally, our general approach to determine concentrations of trap states and dark carriers is also highly relevant to other semiconductor materials.

  8. Anomalous transition of major charge carriers from holes to electrons observed in single-crystal films of tungsten

    Science.gov (United States)

    Jiang, Y. C.; Liu, G. Z.; Gao, J.; Wang, J. F.

    2016-12-01

    Tungsten (W) films were grown on SrTi O3 substrates using pulsed laser deposition. X-ray diffraction and transmission electron microscopy demonstrated that these as-grown films are highly epitaxial and single crystalline with the [00 l ] orientation. A special lattice stacking for the W/STO interface is observed to significantly reduce the lattice mismatching, which can be explained by the coincidence lattice model. The Hall effect has been investigated over the temperature range of 4-330 K. An anomalous transition of the major charge carriers from holes to electrons was observed in these W films upon cooling. The threshold temperature, in which the sign of the Hall coefficient RH was reversed, was found to increase with the film thinning. With the sample's thickness reduced to several unit cells, its major carriers remained electrons even at room temperature. Calculations using the density functional perturbation theory revealed that such a transition from p type to n type could be attributed to the appearance of an electron pocket along the M-Γ direction induced by the lattice mismatching between the W film and SrTi O3 substrate.

  9. Extreme Contrast Ratio Imaging of Sirius with a Charge Injection Device

    CERN Document Server

    Batcheldor, D; Bahr, C; Jenne, J; Ninkov, Z; Bhaskaran, S; Chapman, T

    2015-01-01

    The next fundamental steps forward in understanding our place in the universe could be a result of advances in extreme contrast ratio (ECR) imaging and point spread function (PSF) suppression. For example, blinded by quasar light we have yet to fully understand the processes of galaxy formation and evolution, and there is an ongoing race to obtain a direct image of an exoearth lost in the glare of its host star. To fully explore the features of these systems we must perform observations in which contrast ratios of at least one billion can be regularly achieved with sub 0.1" inner working angles. Here we present the details of a latest generation 32-bit charge injection device (CID) that could conceivably achieve contrast ratios on the order of one billion. We also demonstrate some of its ECR imaging abilities for astronomical imaging. At a separation of two arc minutes, we report a direct contrast ratio of Delta(m_v)=18.3, log(CR)=7.3, or 1 part in 20 million, from observations of the Sirius field. The atmosp...

  10. Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

    Science.gov (United States)

    Cao, Jin; Xie, Jing-Wei; Wei, Xiang; Zhou, Jie; Chen, Chao-Ping; Wang, Zi-Xing; Jhun, Chulgyu

    2016-12-01

    A bright white quantum dot light-emitting device (white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2- [3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2@8 V with the Commission Internationale de l’Eclairage (CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence (EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED. Project supported by the National Natural Science Foundation of China (Grant No. 21302122) and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13ZR1416600).

  11. Pectin and charge modified pectin hydrogel beads as a colon-targeted drug delivery carrier.

    Science.gov (United States)

    Jung, Jiyoung; Arnold, Robert D; Wicker, Louise

    2013-04-01

    The physical and chemical properties of commercial low methoxyl citrus pectins, CP 28 and CP 55, and a pectinmethylesterase (PME) charge modified citrus pectin (MP 38) were compared, and the differences in ability to encapsulate indomethacin in hydrogel beads was determined at 0.5 or 1.0% (w/v) indomethacin ratio, and 100, 200 or 300 mM CaCl(2) solution. In order to investigate the drug release characteristics, indomethacin loaded dried hydrogel beads were immersed in simulated gastric fluids (pH 1.2) for 2h, followed by immersing in simulated intestinal fluids (pH 7.4) for 3h. Pectin type was highly significant (ppectin hydrogel bead was less than 15% in simulated gastro-intestinal fluids. MP 38 beads showed significantly higher entrapment efficiency and lower release rate than beads formed from CP 28 or CP 55. MP 38 hydrogel formulated with 300 mM CaCl(2) and 0.5% indomethacin ratio showed the highest entrapment efficiency. These studies suggest that charge modification of pectin improves encapsulation efficiency of drugs for colon targeted drug delivery system through oral administration.

  12. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  13. Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors

    Science.gov (United States)

    Schulz, Leander; Yun, Eui-Jung; Dodabalapur, Ananth

    2014-06-01

    Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.

  14. Interplay Between Side Chain Pattern, Polymer Aggregation, and Charge Carrier Dynamics in PBDTTPD:PCBM Bulk-Heterojunction Solar Cells

    KAUST Repository

    Dyer-Smith, Clare

    2015-05-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene–alt–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors with linear side-chains yield bulk-heterojunction (BHJ) solar cell power conversion efficiencies (PCEs) of about 4% with phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, while a PBDTTPD polymer with a combination of branched and linear substituents yields a doubling of the PCE to 8%. Using transient optical spectroscopy it is shown that while the exciton dissociation and ultrafast charge generation steps are not strongly affected by the side chain modifications, the polymer with branched side chains exhibits a decreased rate of nongeminate recombination and a lower fraction of sub-nanosecond geminate recombination. In turn the yield of long-lived charge carriers increases, resulting in a 33% increase in short circuit current (J sc). In parallel, the two polymers show distinct grazing incidence X-ray scattering spectra indicative of the presence of stacks with different orientation patterns in optimized thin-film BHJ devices. Independent of the packing pattern the spectroscopic data also reveals the existence of polymer aggregates in the pristine polymer films as well as in both blends which trap excitons and hinder their dissociation.

  15. Efficient charge-carrier extraction from Ag2S quantum dots prepared by the SILAR method for utilization of multiple exciton generation

    Science.gov (United States)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M. J.

    2015-01-01

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the

  16. Shape-Tunable Charge Carrier Dynamics at the Interfaces between Perovskite Nanocrystals and Molecular Acceptors

    KAUST Repository

    Ahmed, Ghada H.

    2016-09-19

    Hybrid organic/inorganic perovskites have recently emerged as an important class of materials and have exhibited remarkable performance in photovoltaics. To further improve their device efficiency, an insightful understanding of the interfacial charge transfer (CT) process is required. Here, we report the first direct experimental observation of the tremendous effect that the shape of perovskite nanocrystals (NCs) has on interfacial CT in the presence of a molecular acceptor. A dramatic change in CT dynamics at the interfaces of three different NC shapes, spheres, platelets, and cubes, is recorded. Our results clearly demonstrate that the mechanism of CT is significantly affected by the NC shape. More importantly, the results demonstrate that complexation on the NC surface acts as an additional driving force not only to tune the CT dynamics but also to control the reaction mechanism at the interface. This observation opens a new venue for further developing perovskite NCs-based applications.

  17. Charge carrier density at the (Na/K)TaO{sub 3}/SrTiO{sub 3} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Schwingenschloegl, Udo; Nazir, Safdar [KAUST, PSE Division, Thuwal 23955-6900, Kingdom of Saudi Arabia (Saudi Arabia)

    2012-07-01

    The formation of a quasi two-dimensional electron gas between the band insulators NaTaO{sub 3} and SrTiO{sub 3} as well as KTaO{sub 3} and SrTiO{sub 3} is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO{sub 3}/SrTiO{sub 3}. Both the p-type (NaO){sup -}/(TiO{sub 2}){sup 0} and n-type (TaO{sub 2}){sup +}/(SrO){sup 0} interfaces in NaTaO{sub 3}/SrTiO{sub 3} are found to be metallic with strongly enhanced charge carrier densities as compared to the respective interfaces in KTaO{sub 3}/SrTiO{sub 3}. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2p magnetic moments, located in the metallic region of the p-type interface. The systems under investigation are suitable for disentangling the complex behavior of metallic interface states, since the structural relaxation is small.

  18. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  19. Phase separation and charge carrier self-organization in semiconductor-multiferroic Eu0.8Ce0.2Mn2O5

    Science.gov (United States)

    Sanina, V. A.; Golovenchits, E. I.; Zalesskii, V. G.; Lushnikov, S. G.; Scheglov, M. P.; Gvasaliya, S. N.; Savvinov, A.; Katiyar, R. S.; Kawaji, H.; Atake, T.

    2009-12-01

    The state with a giant permittivity (ɛ'˜104) and ferromagnetism have been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite-multiferroic Eu0.8Ce0.2Mn2O5 in the investigations of x-ray diffraction, heat capacity, dielectric and magnetic properties, conductivity, and Raman light-scattering spectra of this material. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ɛ' including as-grown two-dimensional layers with doping impurities, charge carriers, and double-exchange-coupled Mn3+-Mn4+ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size one-dimensional superlattices, in which de Haas-van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal causes formation of a layered superstructure consisting of charged layers (with an excess Mn3+ concentration) alternating with dielectric layers of the initial crystal—the ferroelectricity due to charge-ordering state. Ferromagnetism results from double exchange between Mn3+ and Mn4+ ions by means of charge carriers in the charged layers. Temperature evolution of frequency shifts of Ag modes and quasielastic scattering in Raman-scattering spectra agree with the pattern of phase transitions in ECMO suggested.

  20. Effect of doping- and field-induced charge carrier density on the electron transport in nanocrystalline ZnO.

    Science.gov (United States)

    Hammer, Maria S; Rauh, Daniel; Lorrmann, Volker; Deibel, Carsten; Dyakonov, Vladimir

    2008-12-03

    The charge transport properties of thin films of sol-gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 and 10 at.% were investigated. The x-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping was compared to the accumulation of charge carriers in field effect transistor structures. This allowed us to assess the scattering effects due to extrinsic doping on the electron mobility. The latter decreases from 4.6 × 10(-3) to 4.5 × 10(-4) cm(2) V(-1) s(-1) with increasing doping density. In contrast, the accumulation leads to an increasing mobility up to 1.5 × 10(-2) cm(2) V(-1) s(-1). The potential barrier heights related to grain boundaries between the crystallites were derived from temperature dependent mobility measurements. The extrinsic doping initially leads to a grain boundary barrier height lowering, followed by an increase due to doping-induced structural defects. We conclude that the conductivity of sol-gel processed nanocrystalline ZnO:Al is governed by an interplay of the enhanced charge carrier density and the doping-induced charge carrier scattering effects, achieving a maximum at 0.8 at.% in our case.

  1. Plasmonic photosensitization of a wide band gap semiconductor: converting plasmons to charge carriers.

    Science.gov (United States)

    Mubeen, Syed; Hernandez-Sosa, Gerardo; Moses, Daniel; Lee, Joun; Moskovits, Martin

    2011-12-14

    A fruitful paradigm in the development of low-cost and efficient photovoltaics is to dope or otherwise photosensitize wide band gap semiconductors in order to improve their light harvesting ability for light with sub-band-gap photon energies.(1-8) Here, we report significant photosensitization of TiO2 due to the direct injection by quantum tunneling of hot electrons produced in the decay of localized surface-plasmon polaritons excited in gold nanoparticles (AuNPs) embedded in the semiconductor (TiO2). Surface plasmon decay produces electron-hole pairs in the gold.(9-15) We propose that a significant fraction of these electrons tunnel into the semiconductor's conduction band resulting in a significant electron current in the TiO2 even when the device is illuminated with light with photon energies well below the semiconductor's band gap. Devices fabricated with (nonpercolating) multilayers of AuNPs in a TiO2 film produced over 1000-fold increase in photoconductance when illuminated at 600 nm over what TiO2 films devoid of AuNPs produced. The overall current resulting from illumination with visible light is ∼50% of the device current measured with UV (ℏω>Eg band gap) illumination. The above observations suggest that plasmonic nanostructures (which can be fabricated with absorption properties that cover the full solar spectrum) can function as a viable alternative to organic photosensitizers for photovoltaic and photodetection applications.

  2. Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Junhui; Thomson, Douglas J; Freund, Michael S [Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB (Canada); Pilapil, Matt; Pillai, Rajesh G; Aminur Rahman, G M, E-mail: thomson@ee.umanitoba.ca, E-mail: michael_freund@umanitoba.ca [Department of Chemistry, University of Manitoba, Winnipeg, MB (Canada)

    2010-04-02

    Dynamic resistive memory devices based on a conjugated polymer composite (PPy{sup 0}DBS{sup -}Li{sup +} (PPy: polypyrrole; DBS{sup -}: dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

  3. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan

    2013-08-12

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  4. Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy

    Science.gov (United States)

    Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Swartz, C. H.; LeBlanc, E. G.; Myers, T. H.; Li, J. V.; Holtz, M.

    2016-12-01

    Time-resolved and time integrated photoluminescence (PL) studies are reported for undoped and doped CdMgTe/CdSeTe double heterostructures (DHs) grown by molecular beam epitaxy. Undoped DHs are studied with absorber layer thickness varying from 0.5 to 2.5 µm. The n-type free-carrier concentration is varied ~7  ×  1015, 8.4  ×  1016, and 8.4  ×  1017 cm-3 using iodine as a dopant in different absorber layer thicknesses (0.25-2.0 µm). Optical injection is varied from 1  ×  1010 to 3  ×  1011 photons/pulse/cm2, corresponding to the initial injection of photo-carriers up to ~8  ×  1015 cm-3, to examine the effects of excess carrier concentration on the PL lifetimes. Undoped DHs exhibit an initial rapid decay followed by a slower dependence with carrier lifetimes up to ~485 ns. The dependence of carrier lifetimes on the thickness of the absorber layers (0.5-2.5 µm) suggests interface recombination velocities ({{v}\\operatorname{int}}~ ) ~ 1288 and 238 cm s-1 in the initial and later decay times, respectively, corresponding to high and low photo-carrier concentrations. The Shockley-Read-Hall model is used to describe the results in which variations are observed in {{v}\\operatorname{int}}~ for undoped DHs. The lifetimes of doped DHs show a consistent trend with thickness. The {{v}\\operatorname{int}}~ ~ 80-200 cm s-1 is estimated for doping n ~ 7  ×  1015 cm-3 and 240-410 cm s-1 for n ~ 8.4  ×  1016 cm-3. The observed decrease in carrier lifetimes with increasing n is consistent with growing importance of the radiative recombination rate due to the excess carrier concentration. The effect of carrier concentration on the PL spectrum is also discussed.

  5. Efficiency of extrinsic and intrinsic charge-carrier photogeneration processes obtained from the steady-state photocurrent action spectra of poly( p-phenylene vinylene) derivatives

    Science.gov (United States)

    Cazati, T.; Santos, L. F.; Reis, F. T.; Faria, R. M.

    2012-09-01

    The efficiency of the charge-carrier photogeneration processes in poly(2,5-bis(3',7'-dimethyl-octyloxy)-1,4-phenylene vinylene) (OC1OC10-PPV) has been analyzed by the spectral response of the photocurrent of devices in ITO/polymer/Al structures. The symbatic response of the photocurrent action spectra of the OC1OC10-PPV devices, obtained for light-excitation through the ITO electrode and for forward bias, has been fitted using a phenomenological model which considers that the predominant transport mechanism under external applied electric field is the drift of photogenerated charge-carriers, neglecting charge-carrier diffusion. The proposed model takes into account that charge-carrier photogeneration occurs via intermediate stages of bounded pairs (excitonic states), followed by dissociation processes. Such processes result in two different contributions to the photoconductivity: The first one, associated to direct creation of unbound polaron pairs due to intrinsic photoionization; and the second one is associated to secondary processes like extrinsic photoinjection at the metallic electrodes. The results obtained from the model have shown that the intrinsic component of the photoconductivity at higher excitation energies has a considerably higher efficiency than the extrinsic one, suggesting a dependence on the photon energy for the efficiency of the photogeneration process.

  6. Narrowing of band gap and effective charge carrier separation in oxygen deficient TiO2 nanotubes with improved visible light photocatalytic activity.

    Science.gov (United States)

    Choudhury, Biswajit; Bayan, Sayan; Choudhury, Amarjyoti; Chakraborty, Purushottam

    2016-03-01

    Oxygen vacancies are introduced into hydrothermally processed TiO2 nanotube by vacuum calcination. Formation of oxygen vacancies modifies the local coordination in TiO2 as evident from Raman spectroscopy and secondary ion mass spectrometry (SIMS) results. The surface area is increased from 172.5m(2)/g in pure to 405.1m(2)/g in defective TiO2 nanotube. The mid-band gap electronic states created by oxygen vacancies are mostly responsible for the effective narrowing of band gap. Charge carrier separation is sufficiently prolonged as the charged oxygen defect states inhibit facile carrier recombination. With high surface area, narrowed band gap and separated charge carriers defective TiO2 nanotube is a suitable candidate in the photodegradation of methylene blue (MB) and phenol under visible light illumination. Photosensitized electron transfer from MB to the conduction band of TiO2 and the photodegradation of MB is facilitated in presence of high density of oxygen vacancies. Unlike MB, phenol absorbs in the UV region and does not easily excited under visible light. Phenol shows activity under visible light by forming charge transfer complex with TiO2. Defect trapped carriers become available at the phenol-TiO2 interface and finally interact with phenol molecule and degrade it.

  7. Extreme Contrast Ratio Imaging of Sirius with a Charge Injection Device

    Science.gov (United States)

    Batcheldor, D.; Foadi, R.; Bahr, C.; Jenne, J.; Ninkov, Z.; Bhaskaran, S.; Chapman, T.

    2016-02-01

    The next fundamental steps forward in understanding our place in the universe could be a result of advances in extreme contrast ratio (ECR) imaging and point-spread function (PSF) suppression. For example, blinded by quasar light we have yet to fully understand the processes of galaxy and star formation and evolution, and there is an ongoing race to obtain a direct image of an exo-Earth lost in the glare of its host star. To fully explore the features of these systems, we must perform observations in which contrast ratios (CRs) of at least one billion can be regularly achieved with sub 0.″1 inner working angles. Here, we present the details of a latest-generation 32-bit charge injection device (CID) that could conceivably achieve CRs on the order of one billion. We also demonstrate some of its ECR imaging abilities for astronomical imaging. At a separation of two arcminutes, we report a direct CR of {{Δ }}{m}v=18.3,{log}({CR})=7.3, or 1 part in 20 million, from observations of the Sirius field. The atmospheric conditions present during the collection of this data prevented less modest results, and we expect to be able to achieve higher CRs, with improved inner working angles, simply by operating a CID at a world-class observing site. However, CIDs do not directly provide any PSF suppression. Therefore, combining CID imaging with a simple PSF suppression technique like angular differential imaging could provide a cheap and easy alternative to the complex ECR techniques currently being employed.

  8. Charge carrier transport mechanisms in perovskite CdTiO{sub 3} fibers

    Energy Technology Data Exchange (ETDEWEB)

    Imran, Z.; Rafiq, M. A., E-mail: aftab@cantab.net; Hasan, M. M. [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad, 45650 (Pakistan)

    2014-06-15

    Electrical transport properties of electrospun cadmium titanate (CdTiO{sub 3}) fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC) with traps at higher voltages at all temperatures (200 K – 420 K). Trap density in our fibers system is N{sub t} = 6.27 × 10{sup 17} /cm{sup 3}. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH) from 200 K – 300 K. The localized density of states were found to be N(E{sub F}) = 5.51 × 10{sup 21} eV{sup −1} cm{sup −3} at 2 V. Other VRH parameters such as hopping distance (R{sub hop}) and hopping energy (W{sub hop}) were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO{sub 3} fibers efficient material for capacitive energy storage devices.

  9. Charge carrier transport mechanisms in perovskite CdTiO3 fibers

    Directory of Open Access Journals (Sweden)

    Z. Imran

    2014-06-01

    Full Text Available Electrical transport properties of electrospun cadmium titanate (CdTiO3 fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC with traps at higher voltages at all temperatures (200 K – 420 K. Trap density in our fibers system is Nt = 6.27 × 1017 /cm3. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH from 200 K – 300 K. The localized density of states were found to be N(EF = 5.51 × 1021 eV−1 cm−3 at 2 V. Other VRH parameters such as hopping distance (Rhop and hopping energy (Whop were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO3 fibers efficient material for capacitive energy storage devices.

  10. Quadrimolecular recombination kinetics of photogenerated charge carriers in the composites of regioregular polythiophene derivatives and soluble fullerene

    Science.gov (United States)

    Tanaka, Hisaaki; Yokoi, Yuki; Hasegawa, Naoki; Kuroda, Shin-ichi; Iijima, Takayuki; Sato, Takao; Yamamoto, Takakazu

    2010-04-01

    Light-induced electron spin resonance (LESR) measurements have been performed on the composites of regioregular polythiophene derivatives and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) in order to study the recombination kinetics of photogenerated charge carriers. We adopt two regioregular polymers with different side chains; head-to-tail poly(3-hexylthiophene) (RR-P3HT) and head-to-head poly(3-dodecynylthiophene-2,5-diyl) [HH-P3(C≡CDec)Th]. In both systems, two LESR signals due to positive polarons on the polymer (g ˜2.002) and fullerene radical anions (g ˜2.000) have been observed. Quadrimolecular recombination (QR) kinetics, previously reported for RR-P3HT/C60 composites, where two positive polarons and two radical anions recombine simultaneously, has been confirmed in both systems by the observation of Iex0.25 dependence of the LESR intensity on the excitation light intensity (Iex) and the decay curve of the LESR intensity. This process implies the formation of doubly-charged states such as bipolarons or polaron pairs on the polymer to attract two radical anions. Temperature dependence of the QR rate constant, γ, in both systems has exhibited a crossover of the transport mechanism from low temperature tunneling to high temperature hopping process, as in the case of RR-P3HT/C60 composites. In the RR-P3HT/PCBM composites, γ has exhibited marked dependencies on the PCBM concentration or annealing, which may be related to the change of the crystallinity of the phase-separated polymer and fullerene domains as well as their interface structures, affecting the carrier mobilities or the trap states at the interface. Associated change of the molecular orientation of RR-P3HT crystalline domains with the lamellar structure has been further confirmed from the anisotropic LESR signals of the cast films on the substrates, exhibiting a qualitative agreement with the reported x-ray or optical analyses. In the HH-P3(C≡CDec)Th/PCBM composite, γ has been smaller

  11. Spatial Separation of Charge Carriers in In2O3-x(OH)y Nanocrystal Superstructures for Enhanced Gas-Phase Photocatalytic Activity.

    Science.gov (United States)

    He, Le; Wood, Thomas E; Wu, Bo; Dong, Yuchan; Hoch, Laura B; Reyes, Laura M; Wang, Di; Kübel, Christian; Qian, Chenxi; Jia, Jia; Liao, Kristine; O'Brien, Paul G; Sandhel, Amit; Loh, Joel Y Y; Szymanski, Paul; Kherani, Nazir P; Sum, Tze Chien; Mims, Charles A; Ozin, Geoffrey A

    2016-05-24

    The development of strategies for increasing the lifetime of photoexcited charge carriers in nanostructured metal oxide semiconductors is important for enhancing their photocatalytic activity. Intensive efforts have been made in tailoring the properties of the nanostructured photocatalysts through different ways, mainly including band-structure engineering, doping, catalyst-support interaction, and loading cocatalysts. In liquid-phase photocatalytic dye degradation and water splitting, it was recently found that nanocrystal superstructure based semiconductors exhibited improved spatial separation of photoexcited charge carriers and enhanced photocatalytic performance. Nevertheless, it remains unknown whether this strategy is applicable in gas-phase photocatalysis. Using porous indium oxide nanorods in catalyzing the reverse water-gas shift reaction as a model system, we demonstrate here that assembling semiconductor nanocrystals into superstructures can also promote gas-phase photocatalytic processes. Transient absorption studies prove that the improved activity is a result of prolonged photoexcited charge carrier lifetimes due to the charge transfer within the nanocrystal network comprising the nanorods. Our study reveals that the spatial charge separation within the nanocrystal networks could also benefit gas-phase photocatalysis and sheds light on the design principles of efficient nanocrystal superstructure based photocatalysts.

  12. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  13. Fault injection as a test method for an FPGA in charge of data readout for a large tracking detector

    CERN Document Server

    Roed, K; Richter, M; Fehlker, D; Helstrup, H; Alme, J; Ullaland, K

    2011-01-01

    This paper describes how fault injection has been implemented as a test method for an FPGA in an existing hardware configuration setup. As this FPGA is in charge of data readout for a large tracking detector, the reliability of this FPGA is of high importance. Due to the complexity of the readout electronics, irradiation testing is technically difficult at this stage of the system commissioning. The work presented in this paper is therefore motivated by introducing fault injection as an alternative method to characterize failures caused by SEUs. It is a method to study the effect that a configuration upset may have on the operation of the FPGA. The target platform consists of two independent modules for data acquisition and detector control functionality. Fault injection to test the response of the data acquisition module is made possible by implementing the solution as part of the detector control functionality. Correct implementation is validated by a simple shift register design. Our results demonstrate th...

  14. Magnetic latitude dependence of oxygen charge states in the global magnetosphere: Insights into solar wind-originating ion injection

    Science.gov (United States)

    Allen, R. C.; Livi, S. A.; Vines, S. K.; Goldstein, J.

    2016-10-01

    Understanding the sources and subsequent evolution of plasma in a magnetosphere holds intrinsic importance for magnetospheric dynamics. Previous studies have investigated the balance of ionospheric-originating heavy ions (low charge state) from those of solar wind origin (high charge state) in the magnetosphere of Earth. These studies have suggested a variety of entry mechanisms for solar wind ions to penetrate into the magnetosphere. Following from recently published distributions for oxygen charge states observed by the Polar spacecraft, this paper investigates oxygen charge state flux distributions versus L shell and magnetic latitude. By showing these distributions in this frame, and binning by various proxies for magnetospheric dynamics (Dst, AE, VSW∗BZ, Pdyn), insight has been gained into the underlying physics at play for oxygen injection. Ionospheric-originating oxygen is observed to depend predominantly on Dst, whereas solar wind-originating oxygen is observed to have a strong dependence on solar wind dynamic pressure (Pdyn) at the flanks and on VSW∗BZ at the dayside. This suggests that both Kelvin-Helmholtz instabilities and reconnection play major roles in solar wind ion penetration into a magnetosphere. Additionally, the near-Earth magnetotail reconnection site does not seem to be a major injection site of solar wind-originating plasma in the 1 to 200 keV/e energy range.

  15. Effect of surface charge on the brain delivery of nanostructured lipid carriers in situ gels via the nasal route.

    Science.gov (United States)

    Gabal, Yasmine M; Kamel, Amany O; Sammour, Omaima A; Elshafeey, Ahmed H

    2014-10-01

    The aim of this study was to investigate the influence of the nanocarrier surface charge on brain delivery of a model hydrophilic drug via the nasal route. Anionic and cationic nanostructured lipid carriers (NLCs) were prepared and optimized for their particle size and zeta potential. The optimum particles were incorporated in poloxamer in situ gels and their in vivo behavior was studied in the plasma and brain after administration to rats. Optimum anionic and cationic NLCs of size nasal epithelium in rats treated with the anionic NLCs (A7), and destruction of the lining mucosal nasal epithelium in rats treated with the cationic NLCs (C7L). The absolute bioavailability of both drug loaded anionic and cationic NLCs in situ gels was enhanced compared to that of the intranasal solution (IN) of the drug with values of 44% and 77.3%, respectively. Cationic NLCs in situ gel showed a non significant higher Cmax (maximum concentration) in the brain compared to the anionic NLCs in situ gel. Anionic NLCs in situ gel gave highest drug targeting efficiency in the brain (DTE%) with a value of 158.5 which is nearly 1.2 times that of the cationic NLCs in situ gel.

  16. Concentration and mobility of charge carriers in thin polymers at high temperature determined by electrode polarization modeling

    Science.gov (United States)

    Diaham, Sombel; Locatelli, Marie-Laure

    2012-07-01

    Charge carrier concentration (n0) and effective mobility (μeff) are reported in two polymer films (dielectric spectroscopy data. It is shown that the glass transition temperature (Tg) occurrence has a strong influence on the temperature dependence of n0 and μeff. We carry out that n0 presents two distinct Arrhenius-like behaviors below and above Tg, while μeff exhibits a Vogel-Fulcher-Tamman behavior only above Tg whatever the polymer under study. For polyimide films, n0 varies from 1 × 1014 to 4 × 1016 cm-3 and μeff from 1 × 10-8 to 2 × 10-6 cm2 V-1 s-1 between 200 °C to 400 °C. Poly(amide-imide) films show n0 values between 6 × 1016 and 4 × 1018 cm-3 from 270 °C to 400 °C, while μeff varies between 1 × 10-10 and 2 × 10-7 cm2 V-1 s-1. Considering the activation energies of these physical parameters in the temperature range of investigation, n0 and μeff values appear as coherent with those reported in the literature at lower temperature (Polyimide films appear as good candidates due to nS values less than 1011 cm-2 up to 300 °C.

  17. Charge carrier transport properties of methyl-ammonium-lead-trihalide perovskites investigated by the time-of-flight method

    Science.gov (United States)

    Lafalce, Evan; Zhang, Chuang; Vardeny, Z. Valy; University of Utah Team

    We studied the charge transport properties of methyl-ammonium-lead-trihalide perovskites using the photocurrent transient time-of-flight method. Various morphologies that include single-crystals and thin films with different crystalline grain sizes and surface roughness were investigated. The photocurrent transients were recorded as a function of excitation wavelength, intensity, and applied electric field as well as the sample temperature. We found that surface recombination leads to a photocurrent response that is sharply peaked at the band edge. While the carrier mobility depends on the sample preparation and sample temperature, typical values are on the order of 1cm2/Vs, consistent with previous reports using similar methods. This value is high compared to other solution-processed semiconductors such as pi-conjugated polymers and quantum dots; however it is relatively low compared to inorganic semiconductors. Therefore determining the mobility limiting factors in hybrid perovskite devices is important for progress in their optoelectronic device performance. This work was funded by ONR Grant N00014-15-1-2524 at the Un. of Utah.

  18. Charge carriers and small-polaron migration as the origin of intrinsic dielectric anomalies in multiferroic TbMnO3 polycrystals.

    Science.gov (United States)

    Silveira, L G D; Dias, G S; Cótica, L F; Eiras, J A; Garcia, D; Sampaio, J A; Yokaichiya, F; Santos, I A

    2013-11-27

    Temperature-dependent and frequency-dependent dielectric investigations have been performed in TbMnO3 polycrystals sintered in either oxidative or reductive atmospheres. The results revealed the occurrence of two dielectric anomalies above 100 K, which are caused by the thermal activation of charge carriers and their motion in grain cores and grain boundaries. The temperature dependence of the bulk dc conductivity was also analysed and indicates that charge carriers move between inequivalent sites according to a variable-range-hopping mechanism. Also, a strong correlation between dielectric properties and crystalline structure was observed. Furthermore, a low-temperature dielectric relaxation, commonly reported in rare-earth manganite crystals, was observed in both samples. This relaxation follows the empirical Cole-Cole model and was attributed to small-polaron tunnelling. Polaron motion was observed to be affected by the magnetic transitions, structural properties and intrinsic anisotropies in TbMnO3. It is also worth mentioning that the dielectric anomaly due to motion of charge carriers in grain boundaries is the only one of extrinsic origin, while the anomalies related to carrier motion in grain cores and small-polaron tunnelling are intrinsic to TbMnO3.

  19. Efficient charge-carrier extraction from Ag₂S quantum dots prepared by the SILAR method for utilization of multiple exciton generation.

    Science.gov (United States)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J

    2015-01-28

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.

  20. DNA-based small molecules for hole charge injection and channel passivation in organic heptazole field effect transistors

    Science.gov (United States)

    Cho, Youngsuk; Lee, Junyeong; Lim, June Yeong; Yu, Sanghyuck; Yi, Yeonjin; Im, Seongil

    2017-02-01

    DNA-based small molecules of guanine, cytosine, thymine and adenine are adopted for the charge injection layer between the Au electrodes and organic semiconductor, heptazole (C26H16N2). The heptazole-channel organic field effect transistors (OFETs) with a DNA-based small molecule charge injection layer showed higher hole mobility (maximum 0.12 cm2 V-1 s-1) than that of a pristine device (0.09 cm2 V-1 s-1). We characterized the contact resistance of each device by a transfer length method (TLM) and found that the guanine layer among all DNA-based materials performs best as a hole injection layer leading to the lowest contact resistance. Since the guanine layer is also known to be a proper channel passivation layer coupled with a thin conformal Al2O3 layer protecting the channel from bias stress and ambient molecules, we could realize ultra-stable OFETs utilizing guanine/Au contact and guanine/Al2O3 bilayer on the organic channel.

  1. Photoinduced charge injection from excited triplet hypocrellin B into TiO2 colloid in ethanol

    Institute of Scientific and Technical Information of China (English)

    SHEN, Jian-Quan; SHEN, Tao; ZHANG, Man-Hua; LI, Wen; SONG, Ai-Min

    2000-01-01

    Photosensitization of TiO2 colloid by hypocrellin B (HB), a natural photodynamic pigment with extremely high plhotosta bility, has been studied by surface enhanced Raman spec troscorpy (SERS), laser flash photolysis and electron param agnetic resonance (EPR) techniques. The photosensitization of TiO2 occurred practically from the excited triplet dye and the electron injection rate constant is 1.3 × 106 s-1. The influ ences of donor and acceptor on the eleciron injection were in vestigated.

  2. Optical absorption and DFT calculations in L-aspartic acid anhydrous crystals: Charge carrier effective masses point to semiconducting behavior

    Science.gov (United States)

    Silva, A. M.; Silva, B. P.; Sales, F. A. M.; Freire, V. N.; Moreira, E.; Fulco, U. L.; Albuquerque, E. L.; Maia, F. F., Jr.; Caetano, E. W. S.

    2012-11-01

    Density functional theory (DFT) computations within the local-density approximation and generalized gradient approximation in pure form and with dispersion correction (GGA+D) were carried out to investigate the structural, electronic, and optical properties of L-aspartic acid anhydrous crystals. The electronic (band structure and density of states) and optical absorption properties were used to interpret the light absorption measurements we have performed in L-aspartic acid anhydrous crystalline powder at room temperature. We show the important role of the layered spatial disposition of L-aspartic acid molecules in anhydrous L-aspartic crystals to explain the observed electronic and optical properties. There is good agreement between the GGA+D calculated and experimental lattice parameters, with (Δa, Δb, Δc) deviations of (0.029,-0.023,-0.024) (units in Å). Mulliken [J. Chem. Phys.JCPSA60021-960610.1063/1.1740588 23, 1833 (1955)] and Hirshfeld [Theor. Chim. ActaTCHAAM0040-574410.1007/BF00549096 44, 129 (1977)] population analyses were also performed to assess the degree of charge polarization in the zwitterion state of the L-aspartic acid molecules in the DFT converged crystal. The lowest-energy optical absorption peaks related to transitions between the top of the valence band and the bottom of the conduction band involve O 2p valence states and C 1p and O 2p conduction states, with the carboxyl and COOH lateral chain group contributing significantly to the energy band gap. Among the calculated band gaps, the lowest GGA+D (4.49-eV) gap is smaller than the experimental estimate of 5.02 eV, as obtained by optical absorption. Such a wide-band-gap energy together with the small carrier effective masses estimated from band curvatures allows us to suggest that an L-aspartic acid anhydrous crystal can behave as a wide-gap semiconductor. A comparison of effective masses among directions parallel and perpendicular to the L-aspartic molecules layers reveals that charge

  3. Light-Modulation of the Charge Injection in a Polymer Thin-Film Transistor by Functionalizing the Electrodes with Bistable Photochromic Self-Assembled Monolayers.

    Science.gov (United States)

    Mosciatti, Thomas; Del Rosso, Maria G; Herder, Martin; Frisch, Johannes; Koch, Norbert; Hecht, Stefan; Orgiu, Emanuele; Samorì, Paolo

    2016-08-01

    High fatigue resistance, bistability, and drastic property changes among isomers allow efficient modulation of the current output of organic thin-film transistors (OTFTs) to be obtained by a photogating of the charge-injection mechanism.

  4. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, Ryan W. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Callahan, Rebecca [National Renewable Energy Lab. (NREL), Golden, CO (United States); Reid, Obadiah G. [Univ. of Colorado, Boulder, CO (United States); Dolzhnikov, Dmitriy S. [Univ. of Chicago, IL (United States); Talapin, Dmitri V. [Univ. of Chicago, IL (United States); Rumbles, Garry [National Renewable Energy Lab. (NREL), Golden, CO (United States); Luther, Joseph M. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Kopidakis, Nikos [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  5. Photoconductivity of CdTe Nanocrystal-Based Thin Films: Te(2-) Ligands Lead To Charge Carrier Diffusion Lengths Over 2 μm.

    Science.gov (United States)

    Crisp, Ryan W; Callahan, Rebecca; Reid, Obadiah G; Dolzhnikov, Dmitriy S; Talapin, Dmitri V; Rumbles, Garry; Luther, Joseph M; Kopidakis, Nikos

    2015-12-03

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm(2)/(V s)). Our TRMC findings show that Te(2-) capped CdTe NCs show a marked improvement in carrier mobility (11 cm(2)/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  6. Ultrafast terahertz probe of photoexcited free charge carriers in organometal CH3NH3PbI3 perovskite thin film

    Science.gov (United States)

    Yan, Huijie; An, Baoli; Fan, Zhengfu; Zhu, Xiaoya; Lin, Xian; Jin, Zuanming; Ma, Guohong

    2016-04-01

    By using optical pump-terahertz probe (OPTP) experiments, we study the free charge carrier dynamics in photoexcited drop-cast CH3NH3PbI3-based perovskite thin film at room temperature. Compared with the pump photon energy at 1.55 eV, the measured OPTP signal following excitation of 3.1 eV shows an additional fast decay channel of the photoconductivity. Our experimental results demonstrate that effective carrier lifetime can be strongly modulated by surface recombination. In addition, the Drude-Smith-like transient terahertz photoconductivity spectra suggest that photogenerated free carriers experience backscattering at grain boundaries in our solution-processed perovskite films studied here.

  7. Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

    Science.gov (United States)

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.

    2000-01-01

    NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

  8. Effects of Molecular Structure on Intramolecular Charge Carrier Transport in Dithieno [3,2-b: 2,3-d] Pyrrole-Based Conjugated Copolymers

    Directory of Open Access Journals (Sweden)

    Yoshihito Honsho

    2012-01-01

    Full Text Available Intramolecular mobility of positive charge carriers in conjugated polymer films based on dithieno [2,3-b: 2,3-d] pyrrole (DTP is studied by time-resolved microwave conductivity (TRMC. A series of DTP homopolymer and copolymers combined with phenyl, 2,2-biphenyl, thiophene, 2,2-bithiophene, and 9,9-dioctylfluorene were synthesized by Suzuki-Miyaura and Yamamoto coupling reactions. Polymers containing DTP unit are reported to show high value of hole mobility measured by FET method, and this type of polymers is expected to have stable HOMO orbitals which are important for hole transportation. Among these copolymers, DTP coupled with 9,9-dioctylfluorene copolymer showed the highest charge carrier mobility as high as 1.7 cm2/Vs, demonstrating an excellent electrical property on rigid copolymer backbones.

  9. Distinct glycan-charged phosphodolichol carriers are required for the assembly of the pentasaccharide N-linked to the Haloferax volcanii S-layer glycoprotein

    OpenAIRE

    Guan, Ziqiang; Naparstek, Shai; Kaminski, Lina; Konrad, Zvia; Eichler, Jerry

    2010-01-01

    In Archaea, dolichol phosphates have been implicated as glycan carriers in the N-glycosylation pathway, much like their eukaryal counterparts. To clarify this relation, highly sensitive liquid chromatography/mass spectrometry was employed to detect and characterize glycan-charged phosphodolichols in the haloarchaeon Haloferax volcanii. It is reported that Hfx. volcanii contains a series of C55 and C60 dolichol phosphates presenting saturated isoprene subunits at the α and ω positions and sequ...

  10. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vishnyakov, A. V.; Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru; Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A. [Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division, 13, Acad. Lavrent' ev Avenue, Novosibirsk 630090 (Russian Federation)

    2014-03-03

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  11. Control of homogeneous charge compression ignition combustion in a two-cylinder gasoline direct injection engine with negative valve overlap

    Institute of Scientific and Technical Information of China (English)

    WANG Zhi; WANG Jianxin; SHUAI Shijin; MA Qingjun; TIAN Guohong

    2007-01-01

    Homogeneous charge compression ignition(HCCI) has challenges in ignition timing control,combustion rate control,and operating range extension.In this paper,HCCI combustion was studied in a two-cylinder gasoline direct injection (GDI) engine with negative valve overlap (NVO).A two-stage gasoline direct injection strategy combined with negative valve overlap was used to control mixture formation and combustion.The gasoline engine could be operated in HCCI combustion mode at a speed range of 800-2 200 r/min and load,indicated mean effective pressure (IMEP) range of 0.1-0.53 MPa.The engine fuel consumption 4× 10-5 without soot emission.The effect of different injection strategies on HCCI combustion was studied.The experimental results indicated that the coefficient of variation of the engine cycle decreased by using NVO with two-stage direct injection;the ignition timing and combustion rate could be controlled;and the operational range of HCCI combustion could be extended.

  12. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

    CERN Document Server

    Schöche, S; Darakchieva, V; Wang, X; Yoshikawa, A; Wang, K; Araki, T; Nanishi, Y; Schubert, M

    2013-01-01

    Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\\times10^{17}$ cm$^{-3}$ to $8\\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\\times10^{18}$ cm$^{-3}$ to $9\\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Sch\\"oche et al., ...

  13. Performance and efficiency evaluation and heat release study of a direct-injection stratified-charge rotary engine

    Science.gov (United States)

    Nguyen, H. L.; Addy, H. E.; Bond, T. H.; Lee, C. M.; Chun, K. S.

    1987-01-01

    A computer simulation which models engine performance of the Direct Injection Stratified Charge (DISC) rotary engines was used to study the effect of variations in engine design and operating parameters on engine performance and efficiency of an Outboard Marine Corporation (OMC) experimental rotary combustion engine. Engine pressure data were used in a heat release analysis to study the effects of heat transfer, leakage, and crevice flows. Predicted engine data were compared with experimental test data over a range of engine speeds and loads. An examination of methods to improve the performance of the rotary engine using advanced heat engine concepts such as faster combustion, reduced leakage, and turbocharging is also presented.

  14. Rapid evaluation of doping-spike carrier concentration levels in millimetre-wave GaAs Gunn diodes with hot-electron injection

    Science.gov (United States)

    Farrington, N. E. S.; Carr, M. W.; Missous, M.

    2010-12-01

    This paper describes a novel method for fast, accurate evaluation of doping-spike carrier concentrations in hot-electron injected GaAs Gunn diodes. The technique relies on current asymmetry measurements obtained using pulsed-dc testing of on-wafer quasi-planar Gunn diode test structures, which removes the need for full device fabrication. Small changes in carrier concentration can easily be detected (at a nominal value of 1 × 1018 cm-3) and a greater sensitivity than conventional techniques is demonstrated at the doping levels used. In addition, test structure fabrication can be integrated into the initial Gunn diode front side production process allowing a rapid in-process test to be carried out thus leading to a significant reduction in material characterization cycle time.

  15. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

    Energy Technology Data Exchange (ETDEWEB)

    Chava, Venkata S. N., E-mail: vchava@email.sc.edu; Omar, Sabih U.; Brown, Gabriel; Shetu, Shamaita S.; Andrews, J.; Sudarshan, T. S.; Chandrashekhar, M. V. S. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States)

    2016-01-25

    In this letter, we report the UV detection characteristics of an epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistor (SEPT) with EG on top as the transparent Schottky emitter layer. Under 0.43 μW UV illumination, the device showed a maximum common emitter current gain of 113, when operated in the Schottky emitter mode. We argue that avalanche gain and photoconductive gain can be excluded, indicating minority carrier injection efficiency, γ, as high as 99% at the EG/p-SiC Schottky junction. This high γ is attributed to the large, highly asymmetric barrier, which EG forms with the p-SiC. The maximum responsivity of the UV phototransistor is estimated to be 7.1 A/W. The observed decrease in gain with increase in UV power is attributed to recombination in the base region, which reduces the minority carrier lifetime.

  16. Longitudinal injection of charged particles into a static magnetic configuration with mirrors (1964); Injection longitudinale de particules chargees dans une configuration magnetique statique a miroirs (1964)

    Energy Technology Data Exchange (ETDEWEB)

    Girard, J.P.; Gourdon, C. [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1964-07-01

    The theoretical study of the capture of charged particles injected longitudinally into a modulated magnetic configuration of the type proposed by Sinelnikov is extended by the use of the idea of a limited surface. This makes it possible to define the injection conditions which seem to lead to longer confinement times. The injection proposed is effected in the neighbourhood of a trajectory which is asymptotic to equilibrium trajectory situated in the plane of a mirror. Under these conditions the limiting surface is almost completely closed to the mirrors. The initial magnetic moment is no longer zero but has already the maximum value compatible with a penetration of the first mirror. A very small increase in the magnetic moment is then sufficient to ensure the capture of the particles; this is easily attained with a very low modulation factor. It is shown that capture can occur without modulation by a simple non-adiabatic effect due to the curvature of the field in the neighbourhood of the mirrors. A study is made of the influence on the capture in these conditions of a weak parasitic component of the magnetic field which is perpendicular to the axis of revolution of the main configuration. (authors) [French] L'etude theorique de la capture de particules chargees injectees longitudinalement dans une configuration magnetique modulee du type propose par Sinelnikov est etendue par l'utilisation de la notion de surface limite. Ceci permet de definir des conditions d'injections qui semblent devoir conduire a des temps de confinement plus longs: L'injection proposee est faite au voisinage d'une trajectoire asymptote a la trajectoire d'equilibre situee dans le plan d'un miroir. Dans ces conditions la surface limite est presque completement fermee aux miroirs. Le moment magnetique initial n'est plus nul mais possede deja la valeur maximum compatible avec la penetration a travers le premier miroir. Un tres faible accroissement du

  17. The impact of Au doping on the charge carrier dynamics at the interfaces between cationic porphyrin and silver nanoclusters

    KAUST Repository

    Almansaf, Abdulkhaleq A.

    2017-02-04

    We explore the impact of Au doping on the charge transfer dynamics between the positively charged porphyrin (TMPyP) and negatively charged silver nanoclusters (Ag29 NCs). Our transient absorption (TA) spectroscopic results demonstrate that the interfacial charge transfer, the intersystem crossing and the triplet state lifetime of porphyrin can be tuned by the doping of Au atoms in Ag29 NCs. Additionally, we found that the electrostatic interaction between the negative charge of the cluster and the positive charge on the TMPyP is the driving force that brings them close to each other for complex formation and subsequently facilitates the transfer process.

  18. Use of a charge-injection technique to improve performance of the Soft X-ray Imager aboard ASTRO-H

    Energy Technology Data Exchange (ETDEWEB)

    Nobukawa, Kumiko Kawabata, E-mail: kumiko@cr.scphys.kyoto-u.ac.jp [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Tsuru, Takeshi Go [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Nobukawa, Masayoshi [The Hakubi Center for Advanced Research, Kyoto University, Yoshida-Ushinomiya-cho, Sakyo-ku, Kyoto 606-8302 (Japan); Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Tanaka, Takaaki; Uchida, Hiroyuki [Department of Physics, Graduate School of Science, Kyoto University, Kitashirakawa Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Tsunemi, Hiroshi; Hayashida, Kiyoshi; Anabuki, Naohisa; Nakajima, Hiroshi; Nagino, Ryo [Department of Earth and Space Science, Graduate School of Science, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043 (Japan); Dotani, Tadayasu; Ozaki, Masanobu; Natsukari, Chikara [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Tomida, Hiroshi; Kimura, Masashi [ISS Project Science Office, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 2-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Yamauchi, Makoto; Mori, Koji; Hatsukade, Isamu; Nishioka, Yusuke [Department of Applied Physics, University of Miyazaki, 1-1 Gakuen Kibana-dai Nishi, Miyazaki 889-2192 (Japan); Kohmura, Takayoshi [Physics Department, Kogakuin University, 2665-1, Nakano-cho, Hachioji, Tokyo 192-0015 (Japan); and others

    2014-11-21

    We are developing the Soft X-ray Imager (SXI), a charge-coupled device (CCD) camera system to be deployed onboard the ASTRO-H satellite. Using an engineering model system in which design specifications were the same as those of the flight model, we measured charge transfer inefficiency (CTI) and the effects of charge trailing. The CCD was irradiated with monochromatic X-rays produced by a radio isotope ({sup 55}Fe) and X-ray generator using alpha particles from {sup 241}Am. We used four targets for the X-ray generator: (C{sub 2}F{sub 4}){sub n}, SiO{sub 2}, Ti, and Ge. Since CTI degrades energy resolution, we adopted the charge-injection technique to the SXI. With this technique, injected charges fill traps, and subsequent signal charges are transferred with less loss of charge. However, the charge-injection technique can cause positional variations in gain on the CCD chip. Thus, we constructed a method for correcting CTI. We also evaluated the charge trailing effect and tested a method for correcting its effects. After applying these corrections to charge injection, variations in gain improved from 0.5% to 0.1% over the CCD chip, and the energy resolution (FWHM) improved from ∼220eV to ∼180eV at 5.9 keV. - Highlights: • We measured CTI and charge trailing in the energy band from <1keV to ∼10keV. • We developed a method for correcting CTI and charge trailing effects. • Our data with high statistics required exponential functions as CTI model. • After applying the corrections, the remaining positional variations over the CCD satisfy requirements for flight operations.

  19. Charge carrier transport in Cu(In,Ga)Se{sub 2} thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    Energy Technology Data Exchange (ETDEWEB)

    Nichterwitz, Melanie

    2012-01-10

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se{sub 2} (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe{sub 2} absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p{sup +} layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p{sup +} layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface

  20. Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide.

    Science.gov (United States)

    Long, Dang Xuan; Xu, Yong; Wei, Huai-xin; Liu, Chuan; Noh, Yong-Young

    2015-08-21

    A simply and facilely synthesized MoO3 solution was developed to fabricate charge injection layers for improving the charge-injection properties in p-type organic field-effect transistors (OFETs). By dissolving MoO3 powder in ammonium (NH3) solvent under an air atmosphere, an intermediate ammonium molybdate ((NH4)2MoO4) precursor is made stable, transparent and spin-coated to form the MoO3 interfacial layers, the thickness and morphology of which can be well-controlled. When the MoO3 layer was applied to OFETs with a cost-effective molybdenum (Mo) electrode, the field-effect mobility (μFET) was significantly improved to 0.17 or 1.85 cm(2) V(-1)s(-1) for polymer semiconductors, regioregular poly(3-hexylthiophene) (P3HT) or 3,6-bis-(5bromo-thiophen-2-yl)-N,N'-bis(2-octyl-1-dodecyl)-1,4-dioxo-pyrrolo[3,4-c]pyrrole (DPPT-TT), respectively. Device analysis indicates that the MoO3-deposited Mo contact exhibits a contact resistance RC of 1.2 MΩ cm comparable to that in a device with the noble Au electrode. Kelvin-probe measurements show that the work function of the Mo electrode did not exhibit a dependence on the thickness of MoO3 film. Instead, ultraviolet photoemission spectroscopy results show that a doping effect is probably induced by casting the MoO3 layer on the P3HT semiconductor, which leads to the improved hole injection.

  1. Distinct glycan-charged phosphodolichol carriers are required for the assembly of the pentasaccharide N-linked to the Haloferax volcanii S-layer glycoprotein.

    Science.gov (United States)

    Guan, Ziqiang; Naparstek, Shai; Kaminski, Lina; Konrad, Zvia; Eichler, Jerry

    2010-12-01

    In Archaea, dolichol phosphates have been implicated as glycan carriers in the N-glycosylation pathway, much like their eukaryal counterparts. To clarify this relation, highly sensitive liquid chromatography/mass spectrometry was employed to detect and characterize glycan-charged phosphodolichols in the haloarchaeon Haloferax volcanii. It is reported that Hfx. volcanii contains a series of C(55) and C(60) dolichol phosphates presenting saturated isoprene subunits at the α and ω positions and sequentially modified with the first, second, third and methylated fourth sugar subunits comprising the first four subunits of the pentasaccharide N-linked to the S-layer glycoprotein, a reporter of N-glycosylation. Moreover, when this glycan-charged phosphodolichol pool was examined in cells deleted of agl genes encoding glycosyltransferases participating in N-glycosylation and previously assigned roles in adding pentasaccharide residues one to four, the composition of the lipid-linked glycans was perturbed in the identical manner as was S-layer glycoprotein N-glycosylation in these mutants. In contrast, the fifth sugar of the pentasaccharide, identified as mannose in this study, is added to a distinct dolichol phosphate carrier. This represents the first evidence that in Archaea, as in Eukarya, the oligosaccharides N-linked to glycoproteins are sequentially assembled from glycans originating from distinct phosphodolichol carriers.

  2. Study on the drift mobility of carriers in vitreous Se thin film by the voltage-pulse injection

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J.J.; Kim, I.H.; Choi, K.W.; Choi, C.K. (Gyeonsang National Univ., Jinju (Republic of Korea))

    1982-05-01

    The drift mobility of carriers in the vitreous Se thin films were measured by the Haynes-Schokley method. It had been shown that the hole mobility was about 0.83 cm/sup 3//V-sec and the drift velocity showed no time dependence. It had also been shown that the value of Pool-Frenkel parameter was approximately 2 from the I-V curve.

  3. Heavy Inertial Confinement Energy: Interactions Involoving Low charge State Heavy Ion Injection Beams

    Energy Technology Data Exchange (ETDEWEB)

    DuBois, Robert D

    2006-04-14

    During the contract period, absolute cross sections for projectile ionization, and in some cases for target ionization, were measured for energetic (MeV/u) low-charge-state heavy ions interacting with gases typically found in high and ultra-high vacuum environments. This information is of interest to high-energy-density research projects as inelastic interactions with background gases can lead to serious detrimental effects when intense ion beams are accelerated to high energies, transported and possibly confined in storage rings. Thus this research impacts research and design parameters associated with projects such as the Heavy Ion Fusion Project, the High Current and Integrated Beam Experiments in the USA and the accelerator upgrade at GSI-Darmstadt, Germany. Via collaborative studies performed at GSI-Darmstadt, at the University of East Carolina, and Texas A&M University, absolute cross sections were measured for a series of collision systems using MeV/u heavy ions possessing most, or nearly all, of their bound electrons, e.g., 1.4 MeV/u Ar{sup +}, Xe{sup 3+}, and U{sup 4,6,10+}. Interactions involving such low-charge-state heavy ions at such high energies had never been previously explored. Using these, and data taken from the literature, an empirical model was developed for extrapolation to much higher energies. In order to extend our measurements to much higher energies, the gas target at the Experimental Storage Ring in GSI-Darmstadt was used. Cross sections were measured between 20 and 50 MeV/u for U{sup 28+}- H{sub 2} and - N{sub 2}, the primary components found in high and ultra-high vacuum systems. Storage lifetime measurements, information inversely proportional to the cross section, were performed up to 180 MeV/u. The lifetime and cross section data test various theoretical approaches used to calculate cross sections for many-electron systems. Various high energy density research projects directly benefit by this information. As a result, the general

  4. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and 125Te NMR measurements in complex tellurides

    Science.gov (United States)

    Levin, E. M.

    2016-06-01

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S , depends on the free (mobile) carrier concentration, n , and effective mass, m*, as S ˜m*/n2 /3 . The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1 /T1 , depends on both n and m* as 1 /T1˜(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1 /T1˜(m*)2n2 /3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study A gxS bxG e50-2xT e50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  5. Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

    Science.gov (United States)

    Nichterwitz, Melanie; Caballero, Raquel; Kaufmann, Christian A.; Schock, Hans-Werner; Unold, Thomas

    2013-01-01

    Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

  6. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Science.gov (United States)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  7. Beyond vibrationally mediated electron transfer: interfacial charge injection on a sub-10-fs time scale

    Science.gov (United States)

    Huber, Robert; Moser, Jacques E.; Gratzel, Michael; Wachtveitl, Josef L.

    2003-12-01

    The electron transfer (ET) from organic dye molecules to semiconductor-colloidal systems is characterized by a special energetic situation with a charge transfer reaction from a system of discrete donor levels to a continuum of acceptor states. If these systems show a strong electronic coupling they are amongst the fastest known ET systems with transfer times of less than 10 fs. In the first part a detailed discussion of the direct observation of an ET reaction with a time constant of about 6 fs will be given, with an accompanying argumentation concerning possible artifacts or other interfering signal contributions. In a second part we will try to give a simple picture for the scenario of such superfast ET reactions and one main focus will be the discussion of electronic dephasing and its consequences for the ET reaction. The actual ET process can be understood as a kind of dispersion process of the initially located electron into the colloid representing a real motion of charge density from the alizarin to the colloid.

  8. A strategy to minimize the energy offset in carrier injection from excited dyes to inorganic semiconductors for efficient dye-sensitized solar energy conversion.

    Science.gov (United States)

    Fujisawa, Jun-Ichi; Osawa, Ayumi; Hanaya, Minoru

    2016-08-10

    Photoinduced carrier injection from dyes to inorganic semiconductors is a crucial process in various dye-sensitized solar energy conversions such as photovoltaics and photocatalysis. It has been reported that an energy offset larger than 0.2-0.3 eV (threshold value) is required for efficient electron injection from excited dyes to metal-oxide semiconductors such as titanium dioxide (TiO2). Because the energy offset directly causes loss in the potential of injected electrons, it is a crucial issue to minimize the energy offset for efficient solar energy conversions. However, a fundamental understanding of the energy offset, especially the threshold value, has not been obtained yet. In this paper, we report the origin of the threshold value of the energy offset, solving the long-standing questions of why such a large energy offset is necessary for the electron injection and which factors govern the threshold value, and suggest a strategy to minimize the threshold value. The threshold value is determined by the sum of two reorganization energies in one-electron reduction of semiconductors and typically-used donor-acceptor (D-A) dyes. In fact, the estimated values (0.21-0.31 eV) for several D-A dyes are in good agreement with the threshold value, supporting our conclusion. In addition, our results reveal that the threshold value is possible to be reduced by enlarging the π-conjugated system of the acceptor moiety in dyes and enhancing its structural rigidity. Furthermore, we extend the analysis to hole injection from excited dyes to semiconductors. In this case, the threshold value is given by the sum of two reorganization energies in one-electron oxidation of semiconductors and D-A dyes.

  9. Beam Loss Control for the Unstripped Ions from the PS2 Charge Exchange Injection

    CERN Document Server

    Bartmann, W; Benedikt, M; Goddard, B; Kramer, T; Papaphilippou, Y; Vincke, Hel

    2010-01-01

    Control of beam losses is an important aspect of the H-injection system for the PS2, a proposed replacement of the CPS in the CERN injector complex. H- ions may pass the foil unstripped or be partially stripped to excited H0 states which may be stripped in the subsequent strong-field chicane magnet. Depending on the choice of the magnetic field, atoms in the ground and first excited states can be extracted and dumped. The conceptual design of the waste beam handling is presented, including local collimation and the dump line, both of which must take into account the divergence of the beam from stripping in fringe fields. Beam load estimates and activation related requirements of the local collimators and dump are briefly discussed.

  10. Charge-injection-device performance in the high-energy-neutron environment of laser-fusion experiments.

    Science.gov (United States)

    Marshall, F J; DeHaas, T; Glebov, V Yu

    2010-10-01

    Charge-injection devices (CIDs) are being used to image x rays in laser-fusion experiments on the University of Rochester's OMEGA Laser System. The CID cameras are routinely used up to the maximum neutron yields generated (∼10(14) DT). The detectors are deployed in x-ray pinhole cameras and Kirkpatrick-Baez microscopes. The neutron fluences ranged from ∼10(7) to ∼10(9) neutrons/cm(2) and useful x-ray images were obtained even at the highest fluences. It is intended to use CID cameras at the National Ignition Facility (NIF) as a supporting means of recording x-ray images. The results of this work predict that x-ray images should be obtainable on the NIF at yields up to ∼10(15), depending on distance and shielding.

  11. Localization of the large-angle foil-scattering beam loss caused by the multiturn charge-exchange injection

    Science.gov (United States)

    Kato, Shinichi; Yamamoto, Kazami; Yoshimoto, Masahiro; Harada, Hiroyuki; Kinsho, Michikazu

    2013-07-01

    In the 3 GeV rapid cycling synchrotron of the Japan Proton Accelerator Research Complex, significant losses were observed at the branching of the H0 dump line and the beam position monitor that was inserted downstream of the H0 dump branch duct. These losses were caused by the large-angle scattering of the injection and circulating beams at the charge-exchange foil. To realize high-power operation, these losses must be mitigated. Therefore, a new collimation system was developed and installed in October 2011. To efficiently optimize this system, the behavior of particles scattered by the foil and produced by the absorber were simulated, and the optimal position and angle of the absorber were investigated. During this process, an angle regulation method for the absorber was devised. An outline of this system, the angle regulation method for the absorber, and the performance of this new collimation system are described.

  12. Charge Transport in LDPE Nanocomposites Part II—Computational Approach

    Directory of Open Access Journals (Sweden)

    Anh T. Hoang

    2016-03-01

    Full Text Available A bipolar charge transport model is employed to investigate the remarkable reduction in dc conductivity of low-density polyethylene (LDPE based material filled with uncoated nanofillers (reported in the first part of this work. The effect of temperature on charge transport is considered and the model outcomes are compared with measured conduction currents. The simulations reveal that the contribution of charge carrier recombination to the total transport process becomes more significant at elevated temperatures. Among the effects caused by the presence of nanoparticles, a reduced charge injection at electrodes has been found as the most essential one. Possible mechanisms for charge injection at different temperatures are therefore discussed.

  13. Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

    Science.gov (United States)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

    1976-01-01

    The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

  14. Semi-Analytical Modeling and Analysis in Three Dimensions of the Optical Carrier Injection and Diffusion in a Semiconductor Substrate

    Science.gov (United States)

    Gary, René; Arnould, Jean-Daniel; Vilcot, Anne

    2006-05-01

    In order to be faster and more precise than any numerical technique for the computation of the photo-induced plasma in semiconductor, an analytical solution has to be developed. In this paper, the Hankel transform is used to simplify the solution of the differential equation of second order with nonconstant coefficient, known as the diffusion equation. The resulting expression of the three-dimensional (3-D) carrier density includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions.

  15. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    Science.gov (United States)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  16. Influences of Injection Barrier and Mobility on Recombination Rate and Zone in OLEDs

    Institute of Scientific and Technical Information of China (English)

    ZHU Ru-hui; LI Hong-jian; YAN Ling-ling; HU Jin; PAN Yan-zhi

    2006-01-01

    The luminous efficiency of organic light-emitting devices depends on the recombination probability of electrons injected at the cathode and holes at the anode. A theoretical model to calculate the distribution of current densities and the recombination rate in organic single layer devices is presented taking into account the charge injection process at each electrode, charge transport and recombination in organic layer. The calculated results indicate that efficient single-layer devices are possible by adjusting the barrier heights at two electrodes and the carrier mobilities. Lowering the barrier heights can improve the electroluminescent(EL) efficiency pronouncedly in many cases, and efficient devices are still possible using an ohmic contact to inject the low mobility carrier, and a contact limited contact to inject the high mobility carrier. All in all, high EL efficiency needs to consider sufficient recombination, enough injected carriers and well transport.

  17. Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

    Institute of Scientific and Technical Information of China (English)

    Ken K. Chin

    2011-01-01

    For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated,that have multiple transition energy levels among charge states,the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density.A graphical method is used to illustrate the solution of the problem.Relations among the transition energy levels of the multi-level defect are derived using the graphical method.Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work.

  18. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Energy Technology Data Exchange (ETDEWEB)

    Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, LAPLACE, F-31062 Toulouse (France); Vu, T. T. N. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); Electric Power University, 235 Hoang Quoc Viet, 10000 Hanoi (Viet Nam)

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  19. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  20. Charge injection through nanocomposite electrode in microfluidic channel for electrical lysis of biological cells

    Science.gov (United States)

    Mishra, Madhusmita; Krishna, Anil; Chandra, Aman; Shenoy, B. M.; Hegde, G. M.; Mahapatra, D. Roy

    2013-03-01

    Several concepts have been developed in the recent years for nanomaterial based integrated MEMS platform in order to accelerate the process of biological sample preparation followed by selective screening and identification of target molecules. In this context, there exist several challenges which need to be addressed in the process of electrical lysis of biological cells. These are due to (i) low resource settings while achieving maximal lysis (ii) high throughput of target molecules to be detected (iii) automated extraction and purification of relevant molecules such as DNA and protein from extremely small volume of sample (iv) requirement of fast, accurate and yet scalable methods (v) multifunctionality toward process monitoring and (vi) downward compatibility with already existing diagnostic protocols. This paper reports on the optimization of electrical lysis process based on various different nanocomposite coated electrodes placed in a microfluidic channel. The nanocomposites are synthesized using different nanomaterials like Zinc nanorod dispersion in polymer. The efficiency of electrical lysis with various different electrode coatings has been experimentally verified in terms of DNA concentration, amplification and protein yield. The influence of the coating thickness on the injection current densities has been analyzed. We further correlate experimentally the current density vs. voltage relationship with the extent of bacterial cell lysis. A coupled multiphysics based simulation model is used to predict the cell trajectories and lysis efficiencies under various electrode boundary conditions as estimated from experimental results. Detailed in-situ fluorescence imaging and spectroscopy studies are performed to validate various hypotheses.

  1. Investigation on transient flow of a centrifugal charging pump in the process of high pressure safety injection

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fan, E-mail: zhangfan4060@gmail.com; Yuan, Shouqi; Fu, Qiang; Tao, Yi

    2015-11-15

    Highlights: • The transient flow characteristics of the charging pump with the first stage impeller in the HPSI process have been investigated numerically by CFD. • The hydraulic performance of the charging pump during the HPSI are discussed, andthe absolute errors between the simulated and measured results are analyzed in the paper. • Pressure fluctuation in the impeller and flow pattern in the impeller were studied in the HPSI process. It is influenced little at the beginning of the HPSI process while fluctuates strongly in the end of the HPSI process. - Abstract: In order to investigate the transient flow characteristics of the centrifugal charging pump during the transient transition process of high pressure safety injection (HPSI) from Q = 148 m{sup 3}/h to Q = 160 m{sup 3}/h, numerical simulation and experiment are implemented in this study. The transient flow rate, which is the most important factor, is obtained from the experiment and works as the boundary condition to accurately accomplish the numerical simulation in the transient process. Internal characteristics under the variable operating conditions are analyzed through the transient simulation. The results shows that the absolute error between the simulated and measured heads is less than 2.26% and the absolute error between the simulated and measured efficiency is less than 2.04%. Pressure fluctuation in the impeller is less influenced by variable flow rate in the HPSI process, while flow pattern in the impeller is getting better and better with the flow rate increasing. As flow rate increases, fluid blocks on the tongue of the volute and it strikes in this area at large flow rate. Correspondingly, the pressure fluctuation is intense and vortex occurs gradually during this period, which obviously lowers the efficiency of the pump. The contents of the current work can provide references for the design optimization and fluid control of the pump used in the transient process of variable operating

  2. In vivo demonstration of injectable microstimulators based on charge-balanced rectification of epidermically applied currents

    Science.gov (United States)

    Ivorra, Antoni; Becerra-Fajardo, Laura; Castellví, Quim

    2015-12-01

    Objective. It is possible to develop implantable microstimulators whose actuation principle is based on rectification of high-frequency (HF) current bursts supplied through skin electrodes. This has been demonstrated previously by means of devices consisting of a single diode. However, previous single diode devices caused dc currents which made them impractical for clinical applications. Here flexible thread-like stimulation implants which perform charge balance are demonstrated in vivo. Approach. The implants weigh 40.5 mg and they consist of a 3 cm long tubular silicone body with a diameter of 1 mm, two electrodes at opposite ends, and, within the central section of the body, an electronic circuit made up of a diode, two capacitors, and a resistor. In the present study, each implant was percutaneously introduced through a 14 G catheter into either the gastrocnemius muscle or the cranial tibial muscle of a rabbit hindlimb. Then stimulation was performed by delivering HF bursts (amplitude neuromuscular stimulation. The implants were well-tolerated during the 4 weeks. Significance. Existing power supply methods, and, in particular inductive links, comprise stiff and bulky parts. This hinders the development of minimally invasive implantable devices for neuroprostheses based on electrical stimulation. The proposed methodology is intended to relieving such bottleneck. In terms of mass, thinness, and flexibility, the demonstrated implants appear to be unprecedented among the intramuscular stimulation implants ever assayed in vertebrates.

  3. Optimization of charge carrier transport balance for performance improvement of PDPP3T-based polymer solar cells prepared using a hot solution.

    Science.gov (United States)

    Wang, Jian; Zhang, Fujun; Zhang, Miao; Wang, Wenbin; An, Qiaoshi; Li, Lingliang; Sun, Qianqian; Tang, Weihua; Zhang, Jian

    2015-04-21

    Polymer solar cells (PSCs), with poly(diketopyrrolopyrrole-terthiophene) (PDPP3T):[6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the active layers, were fabricated using solutions of different temperatures. The best power conversion efficiency (PCE) of the PSCs prepared using a hot solution was about 6.22%, which is better than 5.54% for PSCs prepared using cool (room temperature) solutions and 5.85% for PSCs prepared using cool solutions with a 1,8-diiodooctane (DIO) solvent additive. The underlying reasons for the improved PCE of the PSCs prepared using a hot solution could be attributed to the more dispersive donor and acceptor distribution in the active layer, resulting in a better bi-continuous interpenetrating network for exciton dissociation and charge carrier transport. An enhanced and more balanced charge carrier transport in the active layer is obtained for the PSCs prepared using a hot solution, which can be determined from the J-V curves of the related hole-only and electron-only devices.

  4. Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

    Science.gov (United States)

    Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

    2013-10-14

    The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

  5. Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Grunwald, Torben

    2009-12-17

    This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

  6. Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong [College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002 (China)

    2015-08-28

    The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

  7. Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

    NARCIS (Netherlands)

    Gholamrezaie, F.; Asadi, K.; Kicken, R.A.H.J.; Langeveld-Voss, B.M.W.; Leeuw, D.M. de; Blom, P.W.M.

    2011-01-01

    We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface o

  8. Photoinduced charge carriers in conjugated polymer-fullerene composites studied with light-induced electron-spin resonance

    NARCIS (Netherlands)

    Dyakonov, V.; Zoriniants, G.; Scharber, M.C.; Brabec, C.J.; Janssen, R.A.J.; Hummelen, J.C.

    1999-01-01

    Detailed studies on photoinduced spins in conjugated polymer/fullerene composites using (cw) light-induced electron-spin-resonance (LESR) technique are reported. Two overlapping LESR lines are observed, from positive polarons on the polymer chains and negative charges on the fullerene moieties. Micr

  9. Photoinduced charge carriers in conjugated polymer–fullerene composites studied with light-induced electron-spin resonance

    NARCIS (Netherlands)

    Dyakonov, V.; Zoriniants, G.; Scharber, M.; Brabec, C.J.; Janssen, R.A.J.; Hummelen, J.C.; Sariciftci, N.S.

    1999-01-01

    Detailed studies on photoinduced spins in conjugated polymer/fullerene composites using (cw) light-induced electron-spin-resonance (LESR) technique are reported. Two overlapping LESR lines are observed, from positive polarons on the polymer chains and negative charges on the fullerene moieties. Micr

  10. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil;

    2016-01-01

    Broadband (1.6-18 THz) terahertz time-domain spectroscopy (THz-TDS) and time-resolved terahertz spectroscopy (TRTS) were performed on a 54 mu m thick chalcogenide glass (As30Se30Te40) sample with a two-color laser-induced air plasma THz system in transmission and reflection modes, respectively. Two...... absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

  11. Evidence for high-energy and low-emittance electron beams using ionization injection of charge in a plasma wakefield accelerator

    CERN Document Server

    Vafaei-Najafabadi, N; Clayton, C E; Joshi, C; Marsh, K A; Mori, W B; Welch, E C; Lu, W; Adli, E; Allen, J; Clarke, C I; Corde, S; Frederico, J; Gessner, S J; Green, S Z; Hogan, M J; Litos, M D; Yakimenko, V

    2015-01-01

    Ionization injection in a plasma wakefield accelerator was investigated experimentally using two lithium plasma sources of different lengths. The ionization of the helium gas, used to confine the lithium, injects electrons in the wake. After acceleration, these injected electrons were observed as a distinct group from the drive beam on the energy spectrometer. They typically have a charge of tens of pC, an energy spread of a few GeV, and a maximum energy of up to 30 GeV. The emittance of this group of electrons can be many times smaller than the initial emittance of the drive beam. The energy scaling for the trapped charge from one plasma length to the other is consistent with the blowout theory of the plasma wakefield.

  12. Selective carrier injection into patterned arrays of pyramidal quantum dots for entangled photon light-emitting diodes

    Science.gov (United States)

    Chung, T. H.; Juska, G.; Moroni, S. T.; Pescaglini, A.; Gocalinska, A.; Pelucchi, E.

    2016-12-01

    Scalability and foundry compatibility (as apply to conventional silicon-based integrated computer processors, for example) in developing quantum technologies are major challenges facing current research. Here we introduce a quantum photonic technology that has the potential to enable the large-scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons that may be able to encode quantum information. The design of the sources is based on quantum dots grown in micrometre-sized pyramidal recesses along the crystallographic direction (111)B, which theoretically ensures high symmetry of the quantum dots—a requirement for bright entangled-photon emission. A selective electric injection scheme in these non-planar structures allows a high density of light-emitting diodes to be obtained, with some producing entangled photon pairs that also violate Bell's inequality. Compatibility with semiconductor fabrication technology, good reproducibility and lithographic position control make these devices attractive candidates for integrated photonic circuits for quantum information processing.

  13. Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors

    Science.gov (United States)

    Tsuji, Masaki; Arai, Norimichi; Marumoto, Kazuhiro; Takeya, Jun; Shimoi, Yukihiro; Tanaka, Hisaaki; Kuroda, Shin-ichi; Takenobu, Taishi; Iwasa, Yoshihiro

    2011-08-01

    Field-induced charge carriers at the semiconductor/dielectric interface of rubrene single-crystal field-effect transistors (RSC-FETs) were studied by ESR. We fabricated bottom-contact RSC-FETs to be used for ESR measurements by laminating RSCs onto SiO2 and polymer/SiO2 gate dielectric surfaces. The observed ESR spectra depict a minimal dependence on gate voltage, whose result is in sharp contrast to those obtained using RSC-FETs fabricated by the deposition of a parylene C gate dielectric. This behavior indicates that few deep trap levels are generated by the lamination technique. The dependence of ESR intensity on drain voltage was also investigated using gradual channel approximation.

  14. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    Science.gov (United States)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  15. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components; Ladungstraegertransport in epitaktischen Strontiumtitanat-Schichten fuer den Einsatz in supraleitenden Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Veit

    2011-02-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively {sigma}(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10{sup 7}..10{sup 8} V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  16. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Polster, S. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Jank, M. P. M. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Frey, L. [Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstrasse 6, 91058 Erlangen (Germany); Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  17. PIC code modeling of spacecraft charging potential during electron beam injection into a background of neutral gas and plasma, part 1

    Science.gov (United States)

    Koga, J. K.; Lin, C. S.; Winglee, R. M.

    1989-01-01

    Injections of nonrelativistic electron beams from an isolated equipotential conductor into a uniform background of plasma and neutral gas were simulated using a 2-D electrostatic particle code. The ionization effects on spacecraft charging are examined by including interactions of electrons with neutral gas. The simulations show that the conductor charging potential decreases with increasing neutral background density due to the production of secondary electrons near the conductor surface. In the spacecraft wake, the background electrons accelerated towards the charged spacecraft produce an enhancement of secondary electrons and ions. Simulations run for longer times indicate that the spacecraft potential is further reduced and short wavelength beam-plasma oscillations appear. The results are applied to explain the spacecraft charging potential measured during the SEPAC experiments from Spacelab 1.

  18. A kinetic model for evaluating the dependence of the quantum yield of nano-TiO{sub 2} based photocatalysis on light intensity, grain size, carrier lifetime, and minority carrier diffusion coefficient: Indirect interfacial charge transfer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Baoshun, E-mail: liubaoshun@126.co [Key Laboratory of Silicate Materials Science and Engineering, Ministry of Education, Wuhan, Hubei 430070 (China) and School of Material Science and Technology, Wuhan University of Technology, Wuhan, Hubei 430070 (China); Zhao Xiujian [Key Laboratory of Silicate Materials Science and Engineering, Ministry of Education, Wuhan, Hubei 430070 (China)

    2010-04-30

    A model based on spherical TiO{sub 2} nanoparticles was developed to study heterogeneous photocatalysis based on TiO{sub 2} in the case of indirect interfacial charge transfer. In this model, the effect of light intensity (I{sub 0}), grain size (r{sub 0}), carrier lifetime (tau{sub p}), and minority carrier diffusion coefficient (D{sub p}) on the quantum yield (QY) of photocatalytic reactions was investigated in detail. Under conditions of sufficiently low incident-light intensity, the QY was found to be propor toI{sub 0}, while it decreased rapidly with an increase in I{sub 0}. In addition, the QY went to zero at a critically high light intensity. Furthermore, the QY was found to decrease with increasing r{sub 0} due to the bulk-recombination loss, and the effect of r{sub 0} on the QY became increasingly stronger with the increase in I{sub 0}. The QY decreased with the decrease in tau{sub p} and D{sub p}, which was more apparent at the critically high I{sub 0}. Under conditions of low [(RH{sub 2}){sub aq}], the QY increased with an increase in [(RH{sub 2}){sub aq}], while it remained nearly constant at high [(RH{sub 2}){sub aq}] due to the fact that the photoinduced electron interfacial transfer became the limiting step for photocatalytic reactions in the case of high [(RH{sub 2}){sub aq}].

  19. Charge carrier mobility in conjugated organic polymers: simulation of an electron mobility in a carbazole-benzothiadiazole-based polymer

    Science.gov (United States)

    Li, Yaping; Lagowski, Jolanta B.

    2011-08-01

    Inorganic (mostly silicon based) solar cells are important devices that are used to solve the world energy and environmental needs. Now days, organic solar cells are attracting considerable attention in the field of photovoltaic cells because of their low cost and processing flexibility. Often conjugated polymers are used in the construction of the organic solar cells. We study the conjugated polymers' charge transport using computational approach that involves the use of the density functional theory (DFT), semiempirical (ZINDO), and Monte Carlo (MC) theoretical methods in order to determine their transfer integrals, reorganization energies, transfer rates (with the use of Marcus-Hush equation) and mobilities. We employ the experimentally determined three dimensional (3D) structure of poly(9,9'-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) to estimate the electron mobility in a similar co-alternating polymer consisting of carbazole and benzothiadiazole units (C8BT). In agreement with our previous work, we found that including an orientational disorder in the crystal reduces the electron mobility in C8BT. We hope that the proposed computational approach can be used to predict charge mobility in organic materials that are used in solar cells.

  20. Light-Induced ESR Studies of Quadrimolecular Recombination Kinetics of Photogenerated Charge Carriers in Regioregular Poly(3-alkylthiophene)/C60 Composites: Alkyl Chain Dependence

    Science.gov (United States)

    Tanaka, Hisaaki; Hasegawa, Naoki; Sakamoto, Tomotaka; Marumoto, Kazuhiro; Kuroda, Shin-ichi

    2007-08-01

    Light-induced ESR (LESR) measurements have been performed on the composites of regioregular poly(3-alkylthiophene) (RR-P3AT) and C60 by using polymers having different alkyl chains (CmH2m+1 with m=6, 8, 10, 12). The quadrimolecular recombination (QR) kinetics of photogenerated charge carriers, previously reported, have been confirmed for all the composites from the excitation power (Iex) dependence of the LESR intensity showing an ˜Iex0.25 dependence. The time decay of LESR intensity is also consistent with the QR model. Considering that only bimolecular recombination is observed in regiorandom polymer composites, the occurrence of QR strongly suggests the formation of doubly charged states, either bipolarons or polaron pairs on the regioregular polymer chains. On the other hand, the QR rate constant γ has been found to exhibit weak alkyl chain dependence, contrary to the case of the field-effect mobility of pure regioregular polymers with systematic alkyl chain dependence. This implies the significant contribution of the polymer and fullerene interface in determining γ.

  1. Relation between microstructure and dielectric breakdown in the case of aluminous ceramics (SEMM method); Comportement d'alumines face a l'injection de charges. Relation microstructure - claquage dielectrique - mesure des charges d'influence (methode SEMM)

    Energy Technology Data Exchange (ETDEWEB)

    Liebault, J.

    1999-02-01

    The dielectric breakdown is strongly linked to the injection and the accumulation of charges in a non-conducting material. The physics of charged insulators proposes mechanisms of trapping and transport of charges in aluminium oxides by considering defects as localization sources of charges and of energy. In order to measure the influence of defects on dielectric breakdown, various aluminous ceramics have been elaborated. The nature and the quantity of defects have been characterized by the nature and the rate of impurities, by porosity, by the quantity of grain boundaries and by the presence and distribution of secondary phases. These materials have undergone breakdown tests. The dielectric rigidity depends strongly on the nature and the distribution of crystallographic defects (vacancy, interstitial ions and dislocation), on the other hand porosity below 5% has no influence. The doping of an alumina ceramic containing less than 100 ppm of impurities implies a diminution of its dielectric rigidity. The measurement of the SEMM (scanning electron microscopy mirror) effect allows the characterization of insulating materials. This method permits the evaluation of the ability for materials to trap charges, it gives information about the charge kinetic of trapping, charge localization and the energy levels of traps. (A.C.)

  2. Absence of carrier separation in ambipolar charge and spin drift in p{sup +}-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Martinelli, L. [Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Arscott, S. [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d' Ascq (France)

    2015-10-19

    The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p{sup +} GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.

  3. A Method for Compensating Customer Voltage Drops due to Nighttime Simultaneous Charging of EVs Utilizing Reactive Power Injection from Battery Chargers

    Science.gov (United States)

    Noda, Taku; Kabasawa, Yuichiro; Fukushima, Kentaro; Nemoto, Koshichi; Uemura, Satoshi

    When we consider the global warming, the reduction of CO2 emission is one of the most important problems which require urgent solutions. One option is to integrate low-CO2-emission generators to the grid as much as possible. Another option is to replace inefficient vehicles based on internal-combustion engines with electric ones (EVs). Due to the latter, we can easily estimate that most consumers will charge EVs' batteries at nighttime. Thus, excessive voltage drops due to the nighttime simultaneous charging are supposed to be a possible future problem. This paper proposes a method for compensating the voltage drops by injecting reactive power from EV battery chargers.

  4. Strontium insertion in methlyammonium lead iodide: long charge carrier lifetime and high fill factor solar cells (Conference Presentation)

    Science.gov (United States)

    Momblona, Cristina; Gil-Escrig, Lidón; Ávila, Jorge; Pérez-Del-Rey, Daniel; Forgács, David; Sessolo, Michele; Bolink, Hendrik J.

    2016-09-01

    Organic-inorganic (hybrid) lead halide perovskites are taking the lead among the emerging photovoltaics technologies, thanks to the demonstration of power conversion efficiencies exceeding 20 %. Hybrid perovskites have a wide spectrum of desirable properties; they are direct bandgap semiconductors with very high absorption coefficients, high and balanced hole and electron mobility, and large diffusion length. A unique feature of these materials is their versatility in terms of bandgap energy, which can be tuned by simple exchange of their components. In this paper we present vacuum and hybrid deposition routes for the preparation of different organic-inorganic lead perovskite thin films, and their incorporation into efficient solar cells. The influence of the type of organic semiconductors used as hole/electron transport layer in p-i-n solar cells will be presented. We also discuss their electroluminescence properties, either for applications in light-emitting diodes or as a diagnostic tool of the optical and electronic quality of perovskite thin films. Finally, the effect of additives and dopants in the perovskite absorber as well as in the charge selective layers will be described.

  5. A novel research approach on the dynamic properties of photogenerated charge carriers at Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films by a frequency-modulated surface photovoltage technology

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Zhang, Wei [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China); Xie, Tengfeng; Wang, Dejun [College of Chemistry, Jilin University, Changchun 130012 (China); Song, Xi-Ming, E-mail: songlab@lnu.edu.cn [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China)

    2013-09-01

    Graphical abstract: The changed SPV with chopping frequencies indicate the separation speeds of photogenerated charge carriers in different films. - Highlights: • Ag{sub 2}S-sensitized TiO{sub 2} films show good photoelectric responses in visible-light region. • Frequency-modulated SPV give dynamic information and evidence of Ag{sub 2}S QDSSCs’ performance. • Frequency-modulated SPV can supply complementary information in the study of Ag{sub 2}S ODSSCs. - Abstract: Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films with different amount of Ag{sub 2}S were fabricated by a successive ionic layer adsorption and reaction (SILAR) method. The separation and transport of photogenerated charge carriers at different spectral regions were studied by the frequency-modulated surface photovoltage technology. Some novel dynamic information of photogenerated charge carriers in a wide spectral range is found. The results indicate that the rate and direction of separation (diffusion) for photogenerated charge carriers are closely related to the performance of quantum-dots-sensitized solar cells (QDSSCs) based on the Ag{sub 2}S/TiO{sub 2} nano-structure.

  6. Electrochemical Film Formation on Magnesium Metal in an Ionic Liquid That Dissolves Metal Triflate and Its Application to an Active Material with Anion Charge Carrier.

    Science.gov (United States)

    Shiga, Tohru; Kato, Yuichi; Inoue, Masae

    2016-11-16

    Irregular metallic growth at the anode during recharging of batteries can seriously influence the safety of batteries. To address this problem, we have attempted to design active anode materials with anion charge carriers and recently observed the formation and dissolution of an electrochemical film by triflate anions (CF3SO3(-)) at the surface of magnesium in an ionic liquid (IL) electrolyte of Mg(CF3SO3)2, which represents a rare anode material. The effect of heterogeneous cations on film formation was examined in this work. In an IL that dissolves NaCF3SO3, sodium ions with a lower reduction potential than Mg(2+)/Mg would not be expected to assist film formation. However, to our surprise, we discovered that some sodium ions are involved in film formation. The sodium ions are believed to act as a cross-linking point for the formation of a film network, which resulted in fairly good reversibility for film formation. In a Ce(CF3SO3)3-IL electrolyte, an electrochemically formed film free of Ce(3+) was obtained. The trivalent cerium cations were deactivated and transformed to an oxide on Mg metal. However, the reversibility of film formation in the Ce(CF3SO3)3 system did not meet the expected level. By coupling the film formation and dissolution behavior with a V2O5 cathode, a rechargeable battery was fabricated with dual ion transport species of Na(+) or Ce(3+) for the cathode and CF3SO3(-) for the anode. The unique battery with NaCF3SO3 is demonstrated to exhibit good discharge/charge performance with long-term cyclability.

  7. Charge carrier resolved relaxation of the first excitonic state in CdSe quantum dots probed with near-infrared transient absorption spectroscopy.

    Science.gov (United States)

    McArthur, Eric A; Morris-Cohen, Adam J; Knowles, Kathryn E; Weiss, Emily A

    2010-11-18

    This manuscript describes a global regression analysis of near-infrared (NIR, 900-1300 nm) transient absorptions (TA) of colloidal CdSe quantum dots (QDs) photoexcited to their first (1S(e)1S(3/2)) excitonic state. Near-IR TA spectroscopy facilitates charge carrier-resolved analysis of excitonic decay of QDs because signals in the NIR are due exclusively to absorptions of photoexcited electrons and holes, as probe energies in this region are not high enough to induce absorptions across the optical bandgap that crowd the visible TA spectra. The response of each observed component of the excitonic decay to the presence of a hole-trapping ligand (1-octanethiol) and an electron-accepting ligand (1,4-benzoquinone), and comparison of time constants to those for recovery of the ground state bleaching feature in the visible TA spectrum, allow for the assignment of the components to (i) a 1.6 ps hole trapping process, (ii) 19 ps and 274 ps surface-mediated electron trapping processes, and (iii) a ∼5 ns recombination of untrapped electrons.

  8. Heterogeneous photocatalysts BiOX/NaBiO3 (X = Cl, Br, I): Photo-generated charge carriers transfer property and enhanced photocatalytic activity

    Science.gov (United States)

    Ji, Lei; Wang, Haoren; Yu, Ruimin

    2016-10-01

    BiOX/NaBiO3 (X = Cl, Br, I) heterostructures were synthesized by a simple chemical etching method using haloid acid as etching agents to react with NaBiO3. Several characterization tools including X-ray powder diffraction (XRD), scanning electron microscope (SEM) and UV-vis diffuse reflectance spectra (UV-vis DRS) were employed for structural and composition analyses of the samples. The as-prepared heterogeneous samples exhibited more efficient photocatalytic activities than pure NaBiO3 and BiOX (X = Cl, Br, I) for the degradation of Rhodamine B (RhB) under visible light (or UV light) irradiation, which could be attributed to the formation of the p-n junction between p-BiOX (X = Cl, Br, I) and n-NaBiO3, which effectively suppresses the recombination of photo-generated electron-hole pairs. Terephthalic acid photoluminescence (TA-PL) probing test and trapping agents experiments demonstrated that radOH (or h+) was the dominant reactive species depend on the different band gap structure of the p-n heterojunctions. Possible transfer processes of photo-generated charge carriers were proposed based on the band structures of BiOX/NaBiO3 (X = Cl, Br, I) and the experimental results.

  9. Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

    Science.gov (United States)

    Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2017-02-01

    By using electric-field-induced optical second harmonic generation (EFISHG) measurement and charge modulation spectroscopy (CMS), we studied carrier behavior and polarization reversal in ITO/ poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE))/pentacene/Au diodes with a ferroelectric P(VDF-TrFE) layer in terms of carrier energetics. The current-voltage (I-V) characteristics of the diodes showed three-step polarization reversal in the dark. However, the I-V was totally different under illumination and exhibited two-step behavior. EFISHG probed the internal electric field in the pentacene layer and accounted for the polarization reversal change due to charge accumulation at the pentacene/P(VDF-TrFE) interface. CMS probed the related carrier energetics and indicated that exciton dissociation in pentacene molecular states governed carrier accumulation at the pentacene/ferroelectric interface, leading to different polarization reversal processes in the dark and under light illumination. Combining EFISHG measurement and CMS provides us a way to study carrier energetics that govern polarization reversal in ferroelectric P(VDF-TrFE)/pentacene diodes.

  10. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  11. Direct injection of spin-polarized carriers across YBa2Cu3O7-–La0.3Ca0.7MnO3 interface at 77 K

    Indian Academy of Sciences (India)

    K V Upadhye; K Ganesh Kumara; S C Purandare; S P Pai; R Pinto

    2002-05-01

    We report here injection of spin-polarized carriers from a half-metallic La0.3-Ca0.7MnO3 (LCMO) colossal magnetoresistive (CMR) thin film into a high-temperature superconducting YBa2Cu3O7- (YBCO) thin film studied using a micro-bridge. The LCMO and YBCO films were grown on $\\langle 100\\rangle$ LaAlO3 (LAO) substrate sequentially using pulsed laser deposition (PLD). - measurements carried out at 77 K show that while normal critical current, $I^{n}_{c}$, of the micro-bridge is 80 mA, the critical current, $I^{p}_{c}$, through the micro-bridge when injected from the CMR layer is 38 mA. This clearly shows that spin-polarized quasiparticles injected from the CMR layer into the YBCO layer suppress the critical current of the superconductor via the pair-breaking phenomena.

  12. Effects of Direct Fuel Injection Strategies on Cycle-by-Cycle Variability in a Gasoline Homogeneous Charge Compression Ignition Engine: Sample Entropy Analysis

    Directory of Open Access Journals (Sweden)

    Jacek Hunicz

    2015-01-01

    Full Text Available In this study we summarize and analyze experimental observations of cyclic variability in homogeneous charge compression ignition (HCCI combustion in a single-cylinder gasoline engine. The engine was configured with negative valve overlap (NVO to trap residual gases from prior cycles and thus enable auto-ignition in successive cycles. Correlations were developed between different fuel injection strategies and cycle average combustion and work output profiles. Hypothesized physical mechanisms based on these correlations were then compared with trends in cycle-by-cycle predictability as revealed by sample entropy. The results of these comparisons help to clarify how fuel injection strategy can interact with prior cycle effects to affect combustion stability and so contribute to design control methods for HCCI engines.

  13. Identifying barriers to charge-carriers in the bulk and surface regions of Cu2ZnSnS4 nanocrystal films by x-ray absorption fine structures (XAFSs)

    Science.gov (United States)

    Turnbull, Matthew J.; Vaccarello, Daniel; Yiu, Yun Mui; Sham, Tsun-Kong; Ding, Zhifeng

    2016-11-01

    Solar cell performance is most affected by the quality of the light absorber layer. For thin-film devices, this becomes a two-fold problem of maintaining a low-cost design with well-ordered nanocrystal (NC) structure. The use of Cu2ZnSnS4 (CZTS) NCs as the light absorber films forms an ideal low-cost design, but the quaternary structure makes it difficult to maintain a well-ordered layer without the use of high-temperature treatments. There is little understanding of how CZTS NC structures affect the photoconversion efficiency, the charge-carriers, and therefore the performance of the device manufactured from it. To examine these relationships, the measured photoresponse from the photo-generation of charge-carrier electron-hole pairs was compared against the crystal structure, as short-range and long-range crystal orders for the films. The photoresponse simplifies the electronic properties into three basic steps that can be associated with changes in energy levels within the band structure. These changes result in the formation of barriers to charge-carrier flow. The extent of these barriers was determined using synchrotron-based X-ray absorbance fine structure to probe the individual metal centers in the film, and comparing these to molecular simulations of the ideal extended x-ray absorbance fine structure scattering. This allowed for the quantification of bond lengths, and thus an interpretation of the distortions in the crystal lattice. The various characteristics of the photoresponse were then correlated to the crystallographic order and used to gain physical insight into barriers to charge-carriers in the bulk and surface regions of CZTS films.

  14. Elucidating the band structure and free charge carrier dynamics of pure and impurities doped CH3NH3PbI(3-x)Cl(x) perovskite thin films.

    Science.gov (United States)

    Zhang, Zhen-Yu; Chen, Xin; Wang, Hai-Yu; Xu, Ming; Gao, Bing-Rong; Chen, Qi-Dai; Sun, Hong-Bo

    2015-11-28

    CH3NH3PbI3-xClx perovskite material has been commonly used as the free charge generator and reservoir in highly efficient perovskite-based solid-state solar photovoltaic devices. However, many of the underlying fundamental photophysical mechanisms in this material such as the perovskite transition band structure as well as the dependent relationship between the carrier properties and lattice properties still lack sufficient understanding. Here, we elucidated the fundamental band structure of the pure CH3NH3PbI3-xClx pervoskite lattice, and then reported about the dependent relationship between the free charge carrier characteristic and the different CH3NH3PbI3-xClx pervoskite lattice thin films utilizing femtosecond time-resolved pump-probe technologies. The data demonstrated that the pure perovskite crystal band structure should only have one conduction and one valence band rather than dual valences, and the pure perovskite lattice could trigger more free charge carriers with a slower recombination rate under an identical pump intensity compared with the impurities doped perovskite crystal. We also investigated the perovskite film performance when exposed to moisture and water, the corresponding results gave us a dip in the optimization of the performance of perovskite based devices, and so as a priority this material should be isolated from moisture (water). This work may propose a deeper perspective on the comprehension for this material and it is useful for future optimization of applications in photovoltaic and light emission devices.

  15. Noise in space-charge-limited current in a CdS-single crystal at low injection level

    NARCIS (Netherlands)

    Driedonks, F.

    1967-01-01

    Current noise spectra (25Hz–20MHz) of a CdS-diode, working under space-charge-limited conditions. show trapping noise at low frequencies and slightly suppressed noise in the upper frequency range. Suppression is relatively small due to the effect of traps.

  16. Charge trapping studies in SiO2 using high current injection from Si-rich SiO2 films

    Science.gov (United States)

    DiMaria, D. J.; Ghez, R.; Dong, D. W.

    1980-09-01

    The high electron injection phenomenon of Si-rich SiO2 films deposited on top of SiO2 can be used for novel charge trapping studies of sites normally present or purposely introduced in the SiO2. From the position and extent of current ledges observed in dark current as a function of ramped gate voltage, the capture cross section and total number of traps can be determined. Using these measurements with capacitance as a function of gate voltage, the trap distribution centroid and number of trapped charges can also be found. Several experimental examples are given including trapping in thermal SiO2, in chemically vapor deposited (CVD) SiO2, and on W, less than a monolayer thick, sandwiched between thermal and CVD SiO2. These stepped insulator metal-insulator-silicon (SI-MIS) ramp I-V results for the trapping parameters are shown to be in good agreement with those determined using the conventional photo I-V and avalanche injection with flat-band voltage tracking techniques. A numerical simulation of the ramp I-V measurements, assuming electric field-enhanced Fowler-Nordheim tunneling at the Si-rich-SiO2-SiO2 interface, is described and is shown to give good agreement with the experimental data. These techniques for SI-MIS structures are faster and easier, although less accurate than the conventional techniques.

  17. Vincristine liposomal--INEX: lipid-encapsulated vincristine, onco TCS, transmembrane carrier system--vincristine, vincacine, vincristine sulfate liposomes for injection, VSLI.

    Science.gov (United States)

    2004-01-01

    INEX Pharmaceuticals is developing a liposomal formulation of vincristine [Onco TCS, vincacine, VSLI, Vincristine sulfate liposomes for injection] for the treatment of relapsed aggressive non-Hodgkin's lymphoma (NHL) and other cancers. It is being developed using INEX's proprietary drug-delivery technology platform called the transmembrane carrier systems (TCS), which enables the targeted intracellular delivery of various therapeutic agents. Liposomal vincristine is expected to have certain advantages over the existing standard preparation of vincristine because the use of TCS technology enables the vincristine to circulate in the blood for longer, accumulate in the tumour, and be released over an extended period of time at the tumour site. The application of TCS technology to any agent, including vincristine, has the potential to increase the efficacy and decrease the side effects of the agent. INEX decided in 1998 to focus on gaining approval for liposomal vincristine in the treatment of relapsed aggressive NHL because no standard therapy was approved for this indication. In 1999, liposomal vincristine was granted accelerated development status by the US FDA, which enables the FDA to approve it based on the surrogate endpoint of a single clinical trial. In addition, the FDA granted liposomal vincristine fast track status in August 2000. In April 2001, INEX and Elan Corporation formed a joint venture for the development and commercialisation of liposomal vincristine, with both companies contributing assets to the venture including worldwide rights to the product and intellectual property rights. The joint venture was called IE Oncology. However, in June 2002, Elan announced that it was going to focus its business strategy on three specific areas, which would not include cancer therapies. INEX announced it had regained 100% ownership of liposomal vincristine in April 2003, by reacquiring the 19.9% equity interest held by Elan and in addition retaining a fully paid

  18. Comparison of charged particle identification using pulse shape discrimination and ΔE−E methods between front and rear side injection in silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Le Neindre, N., E-mail: leneindre@lpccaen.in2p3.fr [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Bougault, R. [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Barlini, S. [INFN e Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Firenze) (Italy); Bonnet, E. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Borderie, B. [Institut de Physique Nucléaire, CNRS/IN2P3, Université Paris-Sud 11, F-91406 Orsay Cedex (France); Casini, G. [INFN sezione di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Firenze) (Italy); Chbihi, A. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Edelbruck, P. [Institut de Physique Nucléaire, CNRS/IN2P3, Université Paris-Sud 11, F-91406 Orsay Cedex (France); Frankland, J.D.; Gruyer, D. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Legouée, E.; Lopez, O. [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Marini, P. [GANIL, CEA/DSM-CNRS/IN2P3, B.P. 5027, F-14076 Caen Cedex (France); Pârlog, M. [LPC, IN2P3-CNRS, ENSICAEN et Université de Caen, F-14050 Caen Cedex (France); Horia Hulubei, National Institute of Physics and Nuclear Engineering, RO-077125 Bucharest-Măgurele (Romania); Pasquali, G. [INFN e Università di Firenze, via G.Sansone 1, 50019 Sesto Fiorentino (Firenze) (Italy); Petcu, M. [Horia Hulubei, National Institute of Physics and Nuclear Engineering, RO-077125 Bucharest-Măgurele (Romania); and others

    2013-02-11

    The response of silicon–silicon–CsI(Tl) telescopes, developed within the FAZIA collaboration, to fragments produced in nuclear reactions {sup 84}Kr+{sup 120-124}Sn at 35 A MeV, has been used to study ion identification methods. Two techniques are considered for the identification of the nuclear products in the silicon stages. The standard ΔE−E one requires signals induced in two detection layers by ions punching through the first one. Conversely, the digital Pulse Shape Analysis (PSA) allows the identification of ions stopped in the first silicon layer. The capabilities of these two identification methods have been compared for different mountings of the silicons, i.e. rear (particles entering through the low electric field side) or front (particles entering through the high electric field side) side injection. The ΔE−E identification method gives exactly the same results in both configurations. At variance, the pulse shape discrimination is very sensitive to the detector mounting. In case of rear side injection, the identification with the “energy vs. charge rise time” PSA method presents energy thresholds which are significantly lower than in the case of front side injection.

  19. Comparison of charged particle identification using pulse shape discrimination and ΔE-E methods between front and rear side injection in silicon detectors

    Science.gov (United States)

    Le Neindre, N.; Bougault, R.; Barlini, S.; Bonnet, E.; Borderie, B.; Casini, G.; Chbihi, A.; Edelbruck, P.; Frankland, J. D.; Gruyer, D.; Legouée, E.; Lopez, O.; Marini, P.; Pârlog, M.; Pasquali, G.; Petcu, M.; Rivet, M. F.; Salomon, F.; Vient, E.; Alba, R.; Baiocco, G.; Bardelli, L.; Bini, M.; Borcea, R.; Bruno, M.; Carboni, S.; Cinausero, M.; Cruceru, I.; Degerlier, M.; Dueñas, J. A.; GaŞior, K.; Gramegna, F.; Grzeszczuk, A.; Kamuda, M.; Kozik, T.; Kravchuk, V.; Lombardo, I.; Maiolino, C.; Marchi, T.; Morelli, L.; Negoita, F.; Olmi, A.; Petrascu, H.; Piantelli, S.; Poggi, G.; Rosato, E.; Santonocito, D.; Spadaccini, G.; Stefanini, A. A.; Twaróg, T.; Vigilante, M.; Fazia Collaboration

    2013-02-01

    The response of silicon-silicon-CsI(Tl) telescopes, developed within the FAZIA collaboration, to fragments produced in nuclear reactions 84Kr+120-124Sn at 35 A MeV, has been used to study ion identification methods. Two techniques are considered for the identification of the nuclear products in the silicon stages. The standard ΔE-E one requires signals induced in two detection layers by ions punching through the first one. Conversely, the digital Pulse Shape Analysis (PSA) allows the identification of ions stopped in the first silicon layer. The capabilities of these two identification methods have been compared for different mountings of the silicons, i.e. rear (particles entering through the low electric field side) or front (particles entering through the high electric field side) side injection. The ΔE-E identification method gives exactly the same results in both configurations. At variance, the pulse shape discrimination is very sensitive to the detector mounting. In case of rear side injection, the identification with the “energy vs. charge rise time” PSA method presents energy thresholds which are significantly lower than in the case of front side injection.

  20. Charging transient in polyvinyl formal

    Indian Academy of Sciences (India)

    P K Khare; P L Jain; R K Pandey

    2001-08-01

    In the present paper charging and discharging transient currents in polyvinyl formal (PVF) were measured as a function of temperatures (40–80°C), poling fields (9.0 × 103–9.0 × 104 V/cm) and electrode combinations (Al–Al, Au–Al, Zn–Al, Bi–Al, Cu–Al and Ag–Al). The current–time characteristics have different values of slope lying between 0.42–0.56 and 1.42–1.63. The polarization is considered to be due to dipolar reorientation associated with structural motions and space charge relaxations due to trapping of injected charge carriers in energetically distributed traps.

  1. On the Nature of High Field Charge Transport in Reinforced Silicone Dielectrics: Experiment and Simulation

    CERN Document Server

    Huang, Yanhui

    2016-01-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were compared with properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial to determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails, and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  2. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Science.gov (United States)

    Huang, Yanhui; Schadler, Linda S.

    2016-08-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  3. Suppression of the Oscillatory Modes of a Space Charge in the Magnetron Injection Guns of Technological Gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Kuntsevich, A. D.; Manuilov, V. N.

    2015-01-01

    We present the results of based on the PIC method numerical simulation of the dynamic processes of trapping of electrons into the adiabatic trap of a technological gyrotron for different configurations of the electric and magnetic fields in the electron beam formation region. The electrode geometry providing a low reflection coefficient of the magnetic mirror to suppress oscillatory modes in the space-charge cloud and ensure the stability of the electron beam with a high fraction of oscillatory energy in such a system has been found.

  4. Optical second harmonic generation measurements for investigating electron injection into a pentacene field effect transistor with Au source and drain electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju; Manaka, Takaaki; Tamura, Ryosuke [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)], E-mail: iwamoto@pe.titech.ac.jp

    2008-03-03

    The pentacene field effect transistors (FETs)' operation for the injection carrier was revealed by means of the drain current-elapsed time (I{sub ds}-t) and optical second harmonic generation (SHG) measurements. The charge carriers forming the conducting channel of pentacene FETs were mainly holes injected from the Au source electrode. Carrier injection from source and drain electrodes was followed by the carrier trapping, and the SHG signal modulated by the change in the electric field distribution between Au the source and drain electrodes was shown. In particular, at the off state of the FET, electron injection and succeeding trapping were suggested. Furthermore, hole injection assisted by trapped electrons was also suggested.

  5. Effective cytoplasmic release of siRNA from liposomal carriers by controlling the electrostatic interaction of siRNA with a charge-invertible peptide, in response to cytoplasmic pH

    Science.gov (United States)

    Itakura, Shoko; Hama, Susumu; Matsui, Ryo; Kogure, Kentaro

    2016-05-01

    Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is effectively released via electrostatic repulsion of siRNA with negatively charged SAPSP at cytoplasmic pH (7.4). The condensed complex of siRNA and positively-charged SAPSP at acidic pH (siRNA/SAPSP) was found to result in almost complete release of siRNA upon charge inversion of SAPSP at pH 7.4, with the resultant negatively-charged SAPSP having no undesirable interactions with endogenous mRNA. Moreover, liposomes encapsulating siRNA/SAPSP demonstrated knockdown efficiencies comparable to those of commercially available siRNA carriers. Taken together, SAPSP may be very useful as a siRNA condenser, as it facilitates effective cytoplasmic release of siRNA, and subsequent induction of specific RNAi effects.Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is

  6. Electro-optical and charge injection investigations of the donor-π-acceptor triphenylamine, oligocene–thiophene–pyrimidine and cyanoacetic acid based multifunctional dyes

    Directory of Open Access Journals (Sweden)

    Ahmad Irfan

    2015-10-01

    Full Text Available The corner stone of present study is to tune the electro-optical and charge transport properties of donor-bridge-acceptor (D-π-A triphenylamine (TPA derivatives. In the present investigation, an electron deficient moiety (pyrimidine, electron-rich moiety (thiophene and oligocene (benzene, naphthalene, anthracene, tetracene and pentacene have been incorporated as π-spacer between the donor TPA unit and cyanoacetic acid acceptor and anchoring group. The elongation of bridge usually affects the energy levels, i.e., higher the highest occupied molecular orbital (HOMO while lower the lowest unoccupied molecular orbital (LUMO thus reduces the HOMO–LUMO energy gap. The lowered LUMO energy levels of cyano-{2-[6-(4-diphenylamino-phenyl-pyrimidin-4-yl]-tetraceno[2,3-b]thiophen-8-yl}-acetic acid (TPA-PTT4 and cyano-{2-[6-(4-diphenylamino-phenyl-pyrimidin-4-yl]-pentaceno[2,3-b]thiophen-9-yl}-acetic acid (TPA-PPT5 dyes revealed that electron injected from dye to semiconductor surface might be auxiliary stable resulting in impediment of quenching. The broken co-planarity between the π-spacer conceiving LUMO and the TPA moiety would help to impede the recombination process. Moreover, it is expected that TPA derivatives with the tetracenothiophene and pentacenothiophene moieties as π-bridge would show better photovoltaic performance due to lowered LUMO energy level, higher electronic coupling constant, light harvesting efficiency and electron injection values.

  7. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds: implications for the DIB carrier

    NARCIS (Netherlands)

    Cox, N.L.J.; Spaans, M.

    2006-01-01

    Context.The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims.In order to reveal the i

  8. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds : implications for the DIB carrier

    NARCIS (Netherlands)

    Cox, NLJ; Spaans, M

    2006-01-01

    Context. The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims. In order to reveal the

  9. Distributed equivalent circuit model for the charge carrier multiplier of electron multiplying CCDs%电子倍增CCD中电荷载流子倍增寄存器的分布式等效电路模型

    Institute of Scientific and Technical Information of China (English)

    周蓓蓓; 陈钱; 何伟基

    2011-01-01

    In order to study the characteristics of the charge multiplication and charge transfer in the charge carrier multiplier (CCM) of the electron multiplying charge-coupled device (EMCCD), a distributed equivalent circuit model was proposed for the charge delivery in CCM.The potential distribution in the CCM element of uniform doping was carried out by solving the Possion equation.The maximum potential expression in the CCM element was obtained by the Kirchhoff’s voltage law (KVL), and the distributed equivalent circuit of the CCM element was shown.Combined with the potential distribution in the CCM element, the distributed equivalent circuit model of the CCM was also gained.The analysis of this model shows that if the interelectrode gap length in the CCM elements decreases, the rate of the charge multiplication increases.The charge delivery mainly depends on the self-induced field and the thermal diffusion field.Most of the stored charges transfer to the next CCM element in the beginning of the clock cycle due to the electron mobility generated by the self-induced field.%为了研究电子倍增电荷耦合器件(EMCCD)中电荷载流子倍增寄存器(CCM)内部电荷的倍增及转移特性,提出了一种适用于CCM的电荷传输机制仿真的分布式等效电路模型.利用泊松方程求解了均匀掺杂条件下CCM单元的电势分布,通过基尔霍夫电压定律(KVL)得到了该单元的最大电势表达式,从而得到了其分布式等效电路.同时,结合该单元内的电势分布求解,最终得到了分布式等效电路模型.通过对该模型的分析表明:CCM单元内电极间的间隙越小,电荷倍增率越大.CCM电荷传输主要受到自感生电场和热扩散电场作用,由于自感生电场的电荷迁移率作用,大部分电荷在时钟周期的初始阶段完成转移.

  10. Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

    Science.gov (United States)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2016-03-01

    In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.

  11. Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure.

    Science.gov (United States)

    Kim, Ji-In; Ji, Kwang Hwan; Jang, Mi; Yang, Hoichang; Choi, Rino; Jeong, Jae Kyeong

    2011-07-01

    Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel layers in transparent field-effect transistors (FETs), however, has been largely limited because of the materials' high carrier density (>1 × 10(20) cm(-3)), wide band gap, and polycrystalline structure. Here, we demonstrate that control over the cation composition in ITO-based oxide films via solid doping of titanium (Ti) can optimize the carrier concentration and suppress film crystallization. On 120 nm thick SiO(2)/Mo (200 nm)/glass substrates, transparent n-type FETs prepared with 4 at % Ti-doped ITO films and fabricated via the cosputtering of ITO and TiO(2) exhibited high electron mobilities of 13.4 cm(2) V(-1) s(-1), a low subthreshold gate swing of 0.25 V decade(-1), and a high I(on/)I(off) ratio of >1 × 10(8).

  12. Tailoring the surface properties and carrier dynamics in SnO2 nanowires.

    Science.gov (United States)

    Kar, Ayan; Stroscio, Michael A; Meyyappan, M; Gosztola, David J; Wiederrecht, Gary P; Dutta, Mitra

    2011-07-15

    We report a study of the role of mid-gap defect levels due to surface states in SnO(2) nanowires on carrier trapping. Ultrafast pump-probe spectroscopy provides carrier relaxation time constants that reveal the nature and positions of various defect levels due to the surface states which in turn provide details on how the carriers relax after their injection. The effect of oxygen annealing on carrier concentration is also studied through XPS valence band photoemission spectroscopy, a sensitive non-contact surface characterization technique. These measurements show that charge transfer associated with chemisorption of oxygen in different forms produces an upward band bending and leads to an increase in the depletion layer width by approximately 70 nm, thereby decreasing surface conductivity and forming the basis for the molecular sensing capability of the nanowires.

  13. Tailoring the surface properties and carrier dynamics in SnO{sub 2} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kar, Ayan; Stroscio, Michael A; Dutta, Mitra [Electrical and Computer Engineering Department, University of Illinois, Chicago, IL 60607 (United States); Meyyappan, M [Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035 (United States); Gosztola, David J; Wiederrecht, Gary P, E-mail: dutta@ece.uic.edu [Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2011-07-15

    We report a study of the role of mid-gap defect levels due to surface states in SnO{sub 2} nanowires on carrier trapping. Ultrafast pump-probe spectroscopy provides carrier relaxation time constants that reveal the nature and positions of various defect levels due to the surface states which in turn provide details on how the carriers relax after their injection. The effect of oxygen annealing on carrier concentration is also studied through XPS valence band photoemission spectroscopy, a sensitive non-contact surface characterization technique. These measurements show that charge transfer associated with chemisorption of oxygen in different forms produces an upward band bending and leads to an increase in the depletion layer width by approximately 70 nm, thereby decreasing surface conductivity and forming the basis for the molecular sensing capability of the nanowires.

  14. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  15. Growth and characterization of charge carrier spatially confined SrMnO3/La0.7Sr0.3MnO3/SrMnO3 trilayers

    Science.gov (United States)

    Galdi, A.; Sacco, C.; Orgiani, P.; Romeo, F.; Maritato, L.

    2017-02-01

    (SrMnO3)x/(La0.7Sr0.3MnO3)y/(SrMnO3)z (x,y,z=number of unit cells) trilayers have been grown using a Reflection High Energy Electron Diffraction calibrated layer-by-layer molecular beam epitaxy technique. X-Ray Reflectivity and X-Ray Diffraction measurements confirm the structural quality and the abruptness of the interfaces. Electrical transport property analysis as a function of temperature show effects related to the spatial confinement of the charge carriers induced by the layering. These results are important in view of future developments of oxide based heterostructures for innovative quantum devices.

  16. Charge-transfer processes in semiconductor colloids

    Science.gov (United States)

    Kamat, Prashant V.; Gopidas, K. R.

    1990-04-01

    A picosecond transient absorption spectroscopy technique has been employed to probe the charge transfer processes in Ti02 semiconductor colloids. The trapping of electrons at the TiO surface (Ti4+ sitesY was characterized from the appearance of a broad absorption in the region of 550-750 nm following the 355-nm laser pulse excitation of Ti02 colloids. The lifetime of these trapped charge carriers increased upon incorporation of a hole scavenger in the colloidal semiconductor system. The mechanistic and kinetic details of the charge injection from excited CdS into a large bandgap semiconductor such as AgI and Ti02 have also been inves-' t i ga ted.

  17. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    Science.gov (United States)

    Mitoma, Nobuhiko; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Kizu, Takio; Lin, Meng-Fang; Fujiwara, Akihiko; Nabatame, Toshihide; Tsukagoshi, Kazuhito

    2015-01-01

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  18. Characterization of charge carrier collection in a CdZnTe Frisch collar detector with a highly collimated {sup 137}Cs source

    Energy Technology Data Exchange (ETDEWEB)

    Kargar, Alireza [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Harrison, Mark J. [Nuclear and Radiological Engineering, University of Florida, 202 NSB, Gainesville, FL 32611 (United States); Brooks, Adam C. [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); McGregor, Douglas S., E-mail: mcgregor@ksu.ed [S.M.A.R.T. Laboratory, Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)

    2010-08-21

    A 4.7 x4.7x9.5 mm{sup 3} CdZnTe Frisch collar device was characterized through probing the device with a highly collimated {sup 137}Cs 662 keV gamma ray source. In a systematic series of experiments, the detector was probed along the length and width with a {sup 137}Cs gamma ray source using a 43.0 mm long Pb-collimator with a 0.6 mm circular hole. The detector was probed along the central line under different operating voltages of 1200, 1000, 800, 600 and 400 V. The experimental results correlated well to charge collection calculations for a modeled device with the same size and operating conditions. It was proved that, unlike the planar configuration, the charge collection efficiency profile along the length of Frisch collar device is considerably improved. The CdZnTe raw materials for this study were acquired from Redlen Technologies, and the Frisch collar device was fabricated and characterized at S.M.A.R.T. Laboratory at Kansas State University.

  19. First-principles hybrid functional study of the electronic structure and charge carrier mobility in perovskite CH3NH3SnI3

    Science.gov (United States)

    Wu, Li-Juan; Zhao, Yu-Qing; Chen, Chang-Wen; Wang, Lin-Zhi; Liu, Biao; Cai, Meng-Qiu

    2016-10-01

    We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3 as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 104 cm2·V-1·s-1 along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3SnI3 can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics. Project supported by the National Natural Science Foundation of China (Grant No. 51172067), the Hunan Provincial Natural Science Fund for Distinguished Young Scholars, China (Grant No. 13JJ1013), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130161110036), and the New Century Excellent Talents in University, China (Grant No. NCET-12-0171.D).

  20. Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

    Science.gov (United States)

    Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

    2014-03-11

    Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

  1. Combined Charge Carrier Transport and Photoelectrochemical Characterization of BiVO4 Single Crystals: Intrinsic Behavior of a Complex Metal Oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rettie, Alexander J.; Lee, Heung Chan; Marshall, Luke G.; Lin, Jung-Fu; Capen, Cigdem; Lindemuth, Jeffrey; McCloy, John S.; Zhou, Jianshi; Bard, Allen J.; Mullins, C. Buddie

    2013-07-08

    ABSTRACT: Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250-400 K, transitioning to a variable range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c-axis, attributed to the layered structure of BiVO4. Measurements of the AC field Hall effect yielded an electron mobility of ~0.2 cm2 V-1 s-1 for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~140 nm was estimated. As a result of low carrier mobility, attempts to measure the DC Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V vs. RHE, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to other metal oxides for PEC applications gives valuable insight into this material as a photoanode.

  2. Combined charge carrier transport and photoelectrochemical characterization of BiVO4 single crystals: intrinsic behavior of a complex metal oxide.

    Science.gov (United States)

    Rettie, Alexander J E; Lee, Heung Chan; Marshall, Luke G; Lin, Jung-Fu; Capan, Cigdem; Lindemuth, Jeffrey; McCloy, John S; Zhou, Jianshi; Bard, Allen J; Mullins, C Buddie

    2013-07-31

    Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo, and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250 to 400 K, undergoing a transition to a variable-range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c axis, attributed to the layered structure of BiVO4. Measurements of the ac field Hall effect yielded an electron mobility of ~0.2 cm(2) V(-1) s(-1) for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~100 nm was estimated. As a result of low carrier mobility, attempts to measure the dc Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V versus the reversible H2 electrode, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to those of other metal oxides for PEC applications gives valuable insight into this material as a photoanode.

  3. Electron beam induced and microemulsion templated synthesis of CdSe quantum dots: tunable broadband emission and charge carrier recombination dynamics

    Science.gov (United States)

    Guleria, Apurav; Singh, Ajay K.; Rath, Madhab C.; Adhikari, Soumyakanti

    2015-04-01

    CdSe quantum dots (QDs) were synthesized by a rapid and one step templated approach inside the water pool of AOT (sodium bis(2-ethylhexyl) sulfosuccinate) based water-in-oil microemulsions (MEs) via electron beam (EB) irradiation technique with high dose rate, which favours high nucleation rate. The interplay of different experimental parameters such as precursor concentration, absorbed dose and {{W}0} values (aqueous phase to surfactant molar ratio) of MEs were found to have interesting consequences on the morphology, photoluminescence (PL), surface composition and carrier recombination dynamics of as-grown QDs. For instance, highly stable ultrasmall (∼1.7 nm) bluish-white light emitting QDs were obtained with quantum efficiency (η) of ∼9%. Furthermore, QDs were found to exhibit tunable broadband light emission extending from 450 to 750 nm (maximum FWHM ∼180 nm). This could be realized from the CIE (Commission Internationale d’Eclairage) chromaticity co-ordinates, which varied across the blue region to the orange region thereby, conferring their potential application in white light emitting diodes. Additionally, the average PL lifetime ≤ft( ≤ft \\right) values could be varied from 18 ns to as high as 74 ns, which reflect the role of surface states in terms of their density and distribution. Another interesting revelation was the self-assembling of the initially formed QDs into nanorods with high aspect ratios ranging from 7 to 20, in correspondence with the {{W}0} values. Besides, the fundamental roles of the chemical nature of water pool and the interfacial fluidity of AOT MEs in influencing the photophysical properties of QDs were investigated by carrying out a similar study in CTAB (cetyltrimethylammonium bromide; cationic surfactant) based MEs. Surprisingly, very profound and contrasting results were observed wherein ≤ft and η of the QDs in case of CTAB MEs were found to be at least three times lower as compared to that in AOT MEs.

  4. 47 CFR 64.1140 - Carrier liability for slamming.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Carrier liability for slamming. 64.1140 Section 64.1140 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES... Providers § 64.1140 Carrier liability for slamming. (a) Carrier Liability for Charges. Any...

  5. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    in Asia and will balance the carrier acquisitions of the United States, the United Kingdom, Russia and India. China’s current military strategy is predominantly defensive, its offensive elements being mainly focused on Taiwan. If China decides to acquire a large carrier with offensive capabilities......, then the country will also acquire the capability to project military power into the region beyond Taiwan, which it does not possess today. In this way, China will have the military capability to permit a change of strategy from the mainly defensive, mainland, Taiwan-based strategy to a more assertive strategy...... catapult with which to launch the fi ghter aircraft, not to mention the possible development of a nuclear power plant for the ship. The Russian press has indicated that China is negotiating to buy SU-33 fi ghters, which Russia uses on the Kuznetsov carrier. The SU-33 is, in its modernized version...

  6. 基于载流子注入产热机制的半导体激光器热模型分析%Analysis of the Thermal Model Based on the Carrier Injection Mechanisms within the Semiconductor Laser

    Institute of Scientific and Technical Information of China (English)

    张建伟; 宁永强; 张星; 张建; 刘云; 秦莉; 王立军

    2012-01-01

    为解决常用经验计算公式参数复杂、产热项考虑不足等问题,采用优化的激光器热模型分析了激光器连续工作时有源区温度的变化并进行了实验验证.通过分析有源区注入载流子产热机制,建立了替代传统的热源计算公式的经验计算公式,考虑了载流子通过激光器内部渐变异质结时的势垒电阻以提高焦耳热计算精度.制作了电极尺寸为10μm、台面尺寸为20 μm的半导体激光器件并对器件热特性进行了模拟.由于未考虑热载流子注入效应,利用传统经验公式得出的有源区热功率密度比提出的优化模型偏低,因而理论模拟的器件内部温升也偏低.对激光器出光特性进行测试,推导出不同注入电流下激光器内部有源区的温升.测量与理论分析对比表明,采用经验公式得出的结果比实际测试结果偏低,而优化的热模型解决了该问题,利用该方法得出的有源区温升与测试结果最大偏差仅为0.2K,且温升随注入电流的变化趋势一致.%In order to solve the problems existed in the calculation of self heating in the active layer of semiconductor lasers, a new model for simulating the self-heating is introduced. The heat source induced by the carrier injection is analyzed. And the method for calculating the conductance of hetero-junction is also investigated to improve the precision of calculated joule heat. Edge emitting laser is fabricated, and the width of P-contact and stripe of fabricated laser are 10 μmand 20 μm, respectively. From the simulation result, the heat source density deduced from the traditional experience model is much lower than that from the optimized thermal model suggested. Thus a lower temperature rising is proposed in the experience model. By testing the shift of the lasing characteristics at different injected currents, the temperature of active layer is gained. Finally, the change of temperature with injected current obtained from

  7. An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

    Science.gov (United States)

    Gul, R.; Roy, U. N.; James, R. B.

    2017-03-01

    In this research, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτe) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trapping and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (VCd-) were identified as a dominant trap. The VCd- were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at Ev + 0.36 eV and Ev + 1.1 eV, Ec + 76 meV and Ev + 0.61 eV, Ev + 36 meV and Ev + 0.86 eV, Ev + 0.52 eV and Ec + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (Nt), and capture cross-section (σ) and hence trapping (tt) and de-trapping (tdt) times. The dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.

  8. Simulations of charge transport in organic light emitting diodes

    CERN Document Server

    Martin, S J

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for th...

  9. Method of the ion beam emittance measurement in the injection beam line of DC-72 cyclotron in the presence of its space charge using the scanner to determine beam dimensions

    CERN Document Server

    Kasarinov, N Y; Kalagin, I V; Kazacha, V I

    2002-01-01

    The gradient method for measuring the transversal emittance of a high current ion beam in the injection channel of the cyclotron DC-72 is considered. The standard scanner is proposed for measuring the transversal dimensions of the beam. The formulae for determination of the mean square beam dimensions by current signals from the scanner needle are adduced. The method of the emittance recovery for axial-symmetric ion beam is set for the case when the space charge effect is essential. The algorithm for tuning of the quadrupole lenses in the injection channel of the cyclotron DC-72 for obtaining the axial-symmetric ion beam is proposed. The evaluations of the expected accuracy of the proposed method for the emittance recovery have been carried out.

  10. Effects of surface ligands on the charge memory characteristics of CdSe/ZnS nanocrystals in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Radmilovic, Velimir; Kim, Eui-Tae

    2009-11-01

    Charge memory characteristics have been systematically studied based on colloidal CdSe/ZnS nanocrystal quantum dots (QDs) embedded in ˜50 nm-thick TiO2 film. Ligand-capped QDs showed negligible electron charging effect, implying that the electron affinity of QDs was significantly decreased by surface dipole layer surrounding QDs. In contrast, the hole charging was affected by the carrier injection blocking effect of the surface ligands. Efficient electron and hole charging characteristics were realized by removing the surface ligands via H2 plasma treatment.

  11. New concepts for exhaust gas turbo charging of a four-cylinder direct injection Otto engine; Neue Konzepte zur Abgasturboaufladung eines direkteinspritzenden Vierzylinder-Ottomotors

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Tilo

    2008-07-01

    This work is supposed to be understood as a contribution to developing a new generation of Otto engines, which meet the increasing ecological and economical demands. The charge concept has a key position in this development. Its design in particular at the four cylinder engine that dominates the market and whose charge changes are very specific, proves to be a special challenge. Based upon known techniques new concepts are developed in this work by means of numeric simulation and experiments and then compared with each other under stationary and transient conditions. On the one hand several exhaust gas turbo chargers in form a register and a two-phase charging are combined with a variable control of the outlet valves, on the other hand the shock-back-up changing is evaluated combined with a biturbo system as well as a twin-current turbine. (orig.)

  12. Confinement of charge carriers in bilayer graphene

    NARCIS (Netherlands)

    Goossens, A.M.

    2013-01-01

    In this thesis we investigate the fundamental properties of electronic transport in bilayer graphene. We do this by confining electrons to narrow constrictions and small islands. Our key result is the fabrication and measurement of nanoscale devices that permit confinement with electric fields in b

  13. Charge carrier dynamics in photovoltaic materials

    NARCIS (Netherlands)

    Jensen, S.A.

    2014-01-01

    We employ the experimental technique THz Time Domain spectroscopy (THz-TDS) to study the optoelectronic properties of potential photovoltaic materials. This all-optical method is useful for probing photoconductivities in a range of materials on ultrafast timescales without the application of physica

  14. Hydrogen carriers

    Science.gov (United States)

    He, Teng; Pachfule, Pradip; Wu, Hui; Xu, Qiang; Chen, Ping

    2016-12-01

    Hydrogen has the potential to be a major energy vector in a renewable and sustainable future energy mix. The efficient production, storage and delivery of hydrogen are key technical issues that require improvement before its potential can be realized. In this Review, we focus on recent advances in materials development for on-board hydrogen storage. We highlight the strategic design and optimization of hydrides of light-weight elements (for example, boron, nitrogen and carbon) and physisorbents (for example, metal-organic and covalent organic frameworks). Furthermore, hydrogen carriers (for example, NH3, CH3OH-H2O and cycloalkanes) for large-scale distribution and for on-site hydrogen generation are discussed with an emphasis on dehydrogenation catalysts.

  15. Carrier-based Modulation and Capacitor Voltage Balance Control Method With Voltage Offset Injection of Single Phase Cascaded H-bridge Rectifiers%基于电压补偿分量注入的单相级联H桥整流器载波调制与电容电压平衡方法

    Institute of Scientific and Technical Information of China (English)

    王顺亮; 宋文胜; 冯晓云

    2015-01-01

    无工频牵引变压器技术是实现高速列车轻量化的手段之一。该文首先分析了无工频变压器电力牵引传动系统前端级联 H 桥整流器的工作原理,以及开关状态和网侧电流对直流侧电容充放电的影响。针对级联 H 桥整流器电容电压平衡问题,为了实现负载严重不对称情况下直流侧电容电压快速平衡的控制目标,以传统的载波移相脉宽调制方法为基础,提出了一种基于电压补偿分量注入的载波移相脉宽调制算法。考虑负载不平衡度很大的恶劣情况,对该算法的电压补偿分量进行设计与定量计算,并针对该算法多个 H 桥级联拓扑的应用进行了理论扩展。计算机仿真和半实物实验都验证了该算法的有效性和正确性。%Transformerless technology is one of the realization of high-speed railway train lightweight. The operation principle of the front-end cascaded H-bridge rectifiers is analyzed, as well as switching states and the line current’s influence on DC-link capacitors’ charging and discharging. A carrier phase-shift PWM with voltage offset injection (CPSPWM-VOI) algorithm based on the conventional CPSPWM is proposed to balance DC-link capacitors’ voltages quickly in severe terrible application condition. Voltage offset component is designed and calculated quantitatively in a bad load imbalance degree. And the proposed algorithm is extended in multiple cascaded H-bridge rectifiers. The effectiveness and correctness of the CPSPWM-VOI algorithm are verified by the computer simulation and hardware-in-the-loop experiments.

  16. Terahertz carrier dynamics in graphene and graphene nanostructures

    DEFF Research Database (Denmark)

    Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan

    2014-01-01

    Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

  17. MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  18. Charge Transport in Hybrid Halide Perovskite Field-Effect Transistors

    Science.gov (United States)

    Jurchescu, Oana

    Hybrid organic-inorganic trihalide perovskite (HTP) materials exhibit a strong optical absorption, tunable band gap, long carrier lifetimes and fast charge carrier transport. These remarkable properties, coupled with their reduced complexity processing, make the HTPs promising contenders for large scale, low-cost thin film optoelectronic applications. But in spite of the remarkable demonstrations of high performance solar cells, light-emitting diodes and field-effect transistor devices, all of which took place in a very short time period, numerous questions related to the nature and dynamics of the charge carriers and their relation to device performance, stability and reliability still remain. This presentation describes the electrical properties of HTPs evaluated from field-effect transistor measurements. The electrostatic gating of provides an unique platform for the study of intrinsic charge transport in these materials, and, at the same time, expand the use of HTPs towards switching electronic devices, which have not been explored previously. We fabricated FETs on SiO2 and polymer dielectrics from spin coating, thermal evaporation and spray deposition and compare their properties. CH3NH3PbI3-xClx can reach balanced electron and hole mobilities of 10 cm2/Vs upon tuning the thin-film microstructure, injection and the defect density at the semiconductor/dielectric interface. The work was performed in collaboration with Yaochuan Mei (Wake Forest University), Chuang Zhang, and Z. Valy Vardeny (University of Utah). The work is supported by ONR Grant N00014-15-1-2943.

  19. 47 CFR 69.124 - Interconnection charge.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Interconnection charge. 69.124 Section 69.124... Computation of Charges § 69.124 Interconnection charge. (a) Until December 31, 2001, local exchange carriers not subject to price cap regulation shall assess an interconnection charge expressed in dollars...

  20. Ultrafast carriers dynamics in filled-skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Liang; Xu, Xianfan, E-mail: xxu@purdue.edu [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Salvador, James R. [Chemical and Materials Systems Laboratory, GM Global R and D, Warren, Michigan 48090 (United States)

    2015-06-08

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4–0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  1. Ultrafast carriers dynamics in filled-skutterudites

    Science.gov (United States)

    Guo, Liang; Xu, Xianfan; Salvador, James R.

    2015-06-01

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4-0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  2. Characterization of a constant current charge detector.

    Science.gov (United States)

    Mori, Masanobu; Chen, Yongjing; Ohira, Shin-Ichi; Dasgupta, Purnendu K

    2012-12-15

    Ion exchangers are ionic equivalents of doped semiconductors, where cations and anions are equivalents of holes and electrons as charge carriers in solid state semiconductors. We have previously demonstrated an ion exchange membrane (IEM) based electrolyte generator which behaves similar to a light-emitting diode and a charge detector (ChD) which behaves analogous to a p-i-n photodiode. The previous work on the charge detector, operated at a constant voltage, established its unique ability to respond to the charge represented by the analyte ions regardless of their redox properties, rather than to their conductivities. It also suggested that electric field induced dissociation (EFID) of water occurs at one or both ion exchange membranes. A logical extension is to study the behavior of the same device, operated in a constant current mode (ChD(i)). The evidence indicates that in the present operational mode the device also responds to the charge represented by the analytes and not their conductivity. Injection of a base into a charge detector operated in the constant voltage mode was not previously examined; in the constant current mode, base injection appears to inhibit EFID. The effects of applied current, analyte residence time and outer channel fluid composition were individually examined; analyte ions of different mobilities as well as affinities for the respective IEMs were used. While the exact behavior is somewhat dependent on the applied current, strong electrolytes, both acids and salts, respond the highest and in a near-uniform fashion, weak acids and their salts respond in an intermediate fashion and bases produce the lowest responses. A fundamentally asymmetric behavior is observed. Injected bases but not injected acids produce a poor response; the effects of incorporating a strong base as the electrolyte in the anion exchange membrane (AEM) compartment is far greater than incorporating an acid in the cation exchange membrane (CEM) compartment. These

  3. Pentamidine Injection

    Science.gov (United States)

    Pentamidine injection is used to treat pneumonia caused by a fungus called Pneumocystis carinii. It is in ... Pentamidine injection comes as powder to be mixed with liquid to be injected intramuscularly (into a muscle) ...

  4. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  5. Normal-state charge dynamics in doped BaFe2As2: Roles of doping and necessary ingredients for superconductivity

    Science.gov (United States)

    Nakajima, M.; Ishida, S.; Tanaka, T.; Kihou, K.; Tomioka, Y.; Saito, T.; Lee, C. H.; Fukazawa, H.; Kohori, Y.; Kakeshita, T.; Iyo, A.; Ito, T.; Eisaki, H.; Uchida, S.

    2014-01-01

    In high-transition-temperature superconducting cuprates and iron arsenides, chemical doping plays an important role in inducing superconductivity. Whereas in the cuprate case, the dominant role of doping is to inject charge carriers, the role for the iron arsenides is complex owing to carrier multiplicity and the diversity of doping. Here, we present a comparative study of the in-plane resistivity and the optical spectrum of doped BaFe2As2, which allows for separation of coherent (itinerant) and incoherent (highly dissipative) charge dynamics. The coherence of the system is controlled by doping, and the doping evolution of the charge dynamics exhibits a distinct difference between electron and hole doping. It is found in common with any type of doping that superconductivity with high transition temperature emerges when the normal-state charge dynamics maintains incoherence and when the resistivity associated with the coherent channel exhibits dominant temperature-linear dependence. PMID:25077444

  6. Identifying the magnetoconductance responses by the induced charge transfer complex states in pentacene-based diodes

    Science.gov (United States)

    Huang, Wei-Shun; Lee, Tsung-Hsun; Guo, Tzung-Fang; Huang, J. C. A.; Wen, Ten-Chin

    2012-07-01

    We investigate the magnetoconductance (MC) responses in photocurrent, unipolar injection, and bipolar injection regimes in pentacene-based diodes. Both photocurrent and bipolar injection contributed MC responses show large difference in MC line shape, which are attributed to triplet-polaron interaction modulated by the magnetic field dependent singlet fission and the intersystem crossing of the polaron pair, respectively. By blending 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane into pentacene, all the MC responses are suppressed but the MC response at unipolar injection regime is enhanced, which is attributed to the induced charge transfer complex states (CT complex states). This work identify the MC responses between single carrier contributed MC and exciton related MC by the induced CT complex states.

  7. Charge transport in amorphous oligothiophenes

    Energy Technology Data Exchange (ETDEWEB)

    Schrader, Manuel; Baumeier, Bjoern; Andrienko, Denis [Max-Planck-Institute for Polymer Research, Ackermannweg 10, 55128 Mainz (Germany); Elschner, Chris; Riede, Moritz; Leo, Karl [TU Dresden, Institute of Applied Photophysics, Mommsenstr. 13, 01062 Dresden (Germany)

    2011-07-01

    Organic semiconducting materials are needed for emerging devices such as photovoltaic solar cells. In this work we combine first principle calculations, molecular dynamics and kinetic Monte Carlo simulations to study charge transport in dicyanovinyl oligothiophenes of different lengths. Poole-Frenkel behavior of the charge carrier mobility is rationalized based on electrostatic and conformational disorder.

  8. Hot Carrier extraction with plasmonic broadband absorbers

    CERN Document Server

    Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J; Mulvaney, Paul; Gomez, Daniel E

    2016-01-01

    Hot charge carrier extraction from metallic nanostructures is a very promising approach for applications in photo-catalysis, photovoltaics and photodetection. One limitation is that many metallic nanostructures support a single plasmon resonance thus restricting the light-to-charge-carrier activity to a spectral band. Here we demonstrate that a monolayer of plasmonic nanoparticles can be assembled on a multi-stack layered configuration to achieve broad-band, near-unit light absorption, which is spatially localised on the nanoparticle layer. We show that this enhanced light absorbance leads to $\\sim$ 40-fold increases in the photon-to-electron conversion efficiency by the plasmonic nanostructures. We developed a model that successfully captures the essential physics of the plasmonic hot-electron charge generation and separation in these structures. This model also allowed us to establish that efficient hot carrier extraction is limited to spectral regions where the photons possessing energies higher than the S...

  9. 47 CFR 69.4 - Charges to be filed.

    Science.gov (United States)

    2010-10-01

    ... interconnection. (f) (g) Local exchange carriers may establish appropriate rate elements for a new service, within... a price cap local exchange carrier to the extent that it has been granted the pricing flexibility in...-price cap local exchange carriers may not assess a carrier common line charge; (3) Local switching;...

  10. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco

    2015-02-11

    We investigate the prototypical hybrid interface formed between PTCDA and conductive n-doped ZnO films by means of complementary optical and electronic spectroscopic techniques. We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.

  11. Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene.

    Science.gov (United States)

    Sierra, Juan F; Neumann, Ingmar; Costache, Marius V; Valenzuela, Sergio O

    2015-06-10

    We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage V(NL) across the remaining (detector) leads. Due to the nonlocal character of the measurement, V(NL) is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and V(NL), V(NL) ∼ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying V(NL) as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.

  12. Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene

    Science.gov (United States)

    Sierra, Juan F.; Neumann, Ingmar; Costache, Marius V.; Valenzuela, Sergio O.

    2015-06-01

    We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonlocal character of the measurement, VNL is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying VNL as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.

  13. Free carrier generation and recombination in PbS quantum dot solar cells

    NARCIS (Netherlands)

    Kurpiers, Jona; Balazs, Daniel M.; Paulke, Andreas; Albrecht, Steve; Lange, Ilja; Protesescu, Loredana; Kovalenko, Maksym V.; Loi, Maria Antonietta; Neher, Dieter

    2016-01-01

    Time Delayed Collection Field and Bias Assisted Charge Extraction (BACE) experiments are used to investigate the charge carrier dynamics in PbS colloidal quantum dot solar cells. We find that the free charge carrier creation is slightly field dependent, thus providing an upper limit to the fill fact

  14. Charge Breeding of Radioactive Ions

    CERN Document Server

    Wenander, F J C

    2013-01-01

    Charge breeding is a technique to increase the charge state of ions, in many cases radioactive ions. The singly charged radioactive ions, produced in an isotope separator on-line facility, and extracted with a low kinetic energy of some tens of keV, are injected into a charge breeder, where the charge state is increased to Q. The transformed ions are either directed towards a dedicated experiment requiring highly charged ions, or post-accelerated to higher beam energies. In this paper the physics processes involved in the production of highly charged ions will be introduced, and the injection and extraction beam parameters of the charge breeder defined. A description of the three main charge-breeding methods is given, namely: electron stripping in gas jet or foil; external ion injection into an electron-beam ion source/trap (EBIS/T); and external ion injection into an electron cyclotron resonance ion source (ECRIS). In addition, some preparatory devices for charge breeding and practical beam delivery aspects ...

  15. Around the laboratories: Dubna: Physics results and progress on bubble chamber techniques; Stanford (SLAC): Operation of a very rapid cycling bubble chamber; Daresbury: Photographs of visitors to the Laboratory; Argonne: Charge exchange injection tests into the ZGS in preparation for a proposed Booster

    CERN Multimedia

    1969-01-01

    Around the laboratories: Dubna: Physics results and progress on bubble chamber techniques; Stanford (SLAC): Operation of a very rapid cycling bubble chamber; Daresbury: Photographs of visitors to the Laboratory; Argonne: Charge exchange injection tests into the ZGS in preparation for a proposed Booster

  16. Charged Frenkel biexcitons in organic molecular crystals

    CERN Document Server

    Agranovich, V M; Kamchatnov, A M

    2001-01-01

    It is known that the energy of the lowest electronic transition in neutral molecules of anthracene, tetracene and other polyacenes is blue shifted in comparison with the corresponding transition energy in mono-valent molecular ions. This effect in molecular crystal may be responsible for the attraction between molecular (Frenkel) exciton and charge carrier. Due to this attraction the bound state of Frenkel exciton and free charge (charged Frenkel exciton) may be formed. The same mechanism can be responsible for formation of charged biexcitons (bound state of two Frenkel excitons and a charge carrier). Calculations are performed for molecular crystals like tetracene by means of one-dimensional lattice model

  17. Doxycycline Injection

    Science.gov (United States)

    Doxycycline injection is used to treat or prevent bacterial infections, including pneumonia and other respiratory tract infections. ... certain skin, genital, intestine, and urinary system infections. Doxycycline injection may be used to treat or prevent ...

  18. Pembrolizumab Injection

    Science.gov (United States)

    Pembrolizumab injection is used to treat melanoma (a type of skin cancer) that cannot be treated with ... who have a specific type of melanoma tumor. Pembrolizumab injection is also used to treat a certain ...

  19. Lacosamide Injection

    Science.gov (United States)

    ... injection is in a class of medications called anticonvulsants. It works by decreasing abnormal electrical activity in ... older (about 1 in 500 people) who took anticonvulsants like lacosamide injection to treat various conditions during ...

  20. Paclitaxel Injection

    Science.gov (United States)

    ... with other medications. Paclitaxel injection manufactured with polyoxyethylated castor oil is used to treat ovarian cancer (cancer that ... cancer, and lung cancer. Paclitaxel injection with polyoxyethylated castor oil is also used to treat Kaposi's sarcoma (a ...

  1. Obinutuzumab Injection

    Science.gov (United States)

    Obinutuzumab injection is used with chlorambucil (Leukeran) to treat chronic lymphocytic leukemia (CLL; a type of cancer of the white blood cells). Obinutuzumab injection is in a class of medications called ...

  2. Moxifloxacin Injection

    Science.gov (United States)

    ... Moxifloxacin injection may also be used to treat bronchitis or sinus infections but should not be used for these conditions if there are other treatment options available.Moxifloxacin injection is in a class ...

  3. Temozolomide Injection

    Science.gov (United States)

    Temozolomide is used to treat certain types of brain tumors. Temozolomide is in a class of medications called alkylating ... Temozolomide injection comes as a powder to be added to fluid and injected over 90 minutes intravenously ( ...

  4. Midazolam Injection

    Science.gov (United States)

    ... injection is in a class of medications called benzodiazepines. It works by slowing activity in the brain ... breast-feeding.talk to your doctor about the risks and benefits of receiving midazolam injection if you ...

  5. Methotrexate Injection

    Science.gov (United States)

    Methotrexate injection is used alone or in combination with other medications to treat gestational trophoblastic tumors (a ... in bones) after surgery to remove the tumor. Methotrexate injection is also used to treat severe psoriasis ( ...

  6. Doripenem Injection

    Science.gov (United States)

    ... injection is in a class of medications called carbapenem antibiotics. It works by killing bacteria.Antibiotics such ... if you are allergic to doripenem injection; other carbapenem antibiotics such as imipenem/cilastatin (Primaxin) or meropenem ( ...

  7. Cefotaxime Injection

    Science.gov (United States)

    Cefotaxime injection is used to treat certain infections caused by bacteria including pneumonia and other lower respiratory ... skin, blood, bone, joint, and urinary tract infections. Cefotaxime injection may also be used before surgery, and ...

  8. Bendamustine Injection

    Science.gov (United States)

    Bendamustine injection is used to treat chronic lymphocytic leukemia (CLL; a type of cancer of the white ... injection. You should use birth control to prevent pregnancy in yourself or your partner during your treatment ...

  9. Caspofungin Injection

    Science.gov (United States)

    Caspofungin injection is used in adults and children 3 months of age and older to treat yeast ... people with a weakened ability to fight infection. Caspofungin injection is in a class of antifungal medications ...

  10. Estrogen Injection

    Science.gov (United States)

    The estradiol cypionate and estradiol valerate forms of estrogen injection are used to treat hot flushes (hot ... should consider a different treatment. These forms of estrogen injection are also sometimes used to treat the ...

  11. Ranitidine Injection

    Science.gov (United States)

    Ranitidine injection comes as a solution (liquid) to be mixed with another fluid and injected intravenously (into a vein) over 5 to 20 minutes. Ranitidine may also be injected into a muscle. It is usually given every 6 to 8 hours, but may also be given ...

  12. Ustekinumab Injection

    Science.gov (United States)

    ... Do not inject into an area where the skin is tender, bruised, red, or hard or where you have scars or stretch marks.Your doctor or pharmacist will ... injection.you should know that ustekinumab injection may decrease your ability ... new or changing skin lesions, minor infections (such as open cuts or ...

  13. Higher lung accumulation of intravenously injected organic nanotubes

    Directory of Open Access Journals (Sweden)

    Maitani Y

    2013-01-01

    Full Text Available Yoshie Maitani,1 Yuri Nakamura,1 Masao Kon,1 Emi Sanada,1 Kae Sumiyoshi,1 Natsuki Fujine,1 Masumi Asakawa,2 Masaki Kogiso,2 Toshimi Shimizu21Institute of Medicinal Chemistry, Hoshi University, Tokyo, Japan; 2Nanotube Research Center (NTRC, National Institute of Advanced Industrial Science and Technology (AIST, Tsukuba, JapanAbstract: The size and shape of intravenously injected particles can affect their biodistribution and is of importance for the development of particulated drug carrier systems. In this study, organic nanotubes (ONTs with a carboxyl group at the surface, a length of approximately 2 µm and outer diameter of 70–90 nm, were injected intravenously into tumor-bearing mice. To use ONTs as drug carriers, the biodistribution in selected organs of ONTs postinjection was examined using irinotecan, as an entrapped water-soluble marker inside ONTs, and gadolinium-chelated ONT, as an ONT marker, and compared with that of a 3 µm fluorescently labeled spherical microparticle which was similar size to the length of ONTs. It was found that for irinotecan, its active metabolite and gadolinium-chelated ONTs were highly accumulated in the lung, but to a lower level in the liver and spleen. On the other hand, microparticles deposited less in the lung and more highly in the liver. Moreover, histologic examination showed ONTs distributed more in lung tissues in part, whereas microparticles were present in blood vessels postinjection. These preliminary results support the notion of using negatively charged ONTs as intravascular carriers to maximize accumulation in the lung whilst reducing sequestration by the liver and spleen. This finding suggested that ONTs are potential carriers for lung-targeting drug delivery.Keywords: organic nanotube, lung, biodistribution, microparticle, particle shape

  14. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Thilo; Jäger, Christof M. [Department of Chemistry and Pharmacy, Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen (Germany); Jordan, Meredith J. T. [School of Chemistry, University of Sydney, Sydney, NSW 2006 (Australia); Clark, Timothy, E-mail: tim.clark@fau.de [Department of Chemistry and Pharmacy, Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen (Germany); Centre for Molecular Design, University of Portsmouth, Portsmouth PO1 2DY (United Kingdom)

    2015-07-28

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

  15. Investigation of hole transport in α-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer

    Science.gov (United States)

    Fernandes, Jean Maria; Kiran, M. Raveendra; Ulla, Hidayath; Satyanarayan, M. N.; Umesh, G.

    2015-07-01

    The charge carrier transport is studied in N,N‧-di(1-naphthyl)-N,N‧-diphenyl-(1,1‧-biphenyl)-4,4‧-diamine (α-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of α-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant.

  16. Subcutaneous Injections

    DEFF Research Database (Denmark)

    Thomsen, Maria

    This thesis is about visualization and characterization of the tissue-device interaction during subcutaneous injection. The tissue pressure build-up during subcutaneous injections was measured in humans. The insulin pen FlexTouchr (Novo Nordisk A/S) was used for the measurements and the pressure...... build-up was evaluated indirectly from the changes in the flow rate between subcutaneous injections and air injections. This method enabled the tissue counter pressure to be evaluated without a formal clinical study approval. The measurements were coupled to a model for the pressure evolution...

  17. Controlling carrier dynamics at the nanoscale

    Science.gov (United States)

    Cánovas, Enrique; Bonn, Mischa

    2016-10-01

    This Special issue is motivated by the occasion of the International Conference on Charge Carrier Dynamics at the Nanoscale (CCDNano), held in Santiago de Compostela (Spain) in September 2015. As chairs for the CCDNano meeting, we aimed at bringing together experts from different scientific fields in order to trigger interdisciplinary discussions and collaborations; the ultimate goal of the conference was to serve as a platform to advance and help unifying methodologies and theories from different research sub-fields. We also aimed at a deeper understanding of charge dynamics to contribute to the development of improved or novel nanostructured devices. This special issue keeps that spirit, and intends to provide an overview of ongoing research efforts regarding charge carrier dynamics at the nanoscale.

  18. Injection MD

    CERN Document Server

    Bartmann, W; Bracco, C; Drosdal, L; Gianfelice, E; Goddard, B; Kain, V; Papaphilippou, Y; Vanbavinckhove, G

    2012-01-01

    This note summarizes the results obtained at injection during the 2nd MD block and the floating MD block in July. Highlights are presented for injection in the LHC with the Q20 SPS optics, influence of the supercycle and injection with 25 ns bunch spacing. Beams were successfully injected into the LHC using the Q20 optics [1, 3]. Small corrections were needed to steer the beam in the transfer lines. Dispersion measurements were conducted for both beams. The horizontal normalized dispersion in TI2 was a factor 2 smaller for Q20 with respect to Q26, for TI8 on the other hand the opposite was observed. The results for injection loss dependency on super cycle composition show only a small increase in losses for beam 2. The losses observed must therefore mainly come from other sources such as shot-by-shot stability or quality of scraping. For the injection with 25 ns bunch spacing bunches were injected for both beams. For B1 up to the maximum of 288 bunches. For B2 on the other only up to 144 bunches were injected...

  19. Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

    Science.gov (United States)

    Dingemans, G.; Terlinden, N. M.; Verheijen, M. A.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2011-11-01

    Al2O3 synthesized by atomic layer deposition (ALD) on H-terminated Si(100) exhibits a very thin (˜1 nm) interfacial SiOx layer. At this interface, a high fixed negative charge density, Qf, is present after annealing which contributes to ultralow surface recombination velocities ˜5 nm), the polarity of the effective charge density changed from negative to positive. The observed changes in Qf and the associated field-effect passivation had a significant influence on the injection-level-dependent minority carrier lifetime of Si.

  20. Separation and recombinatiuon of charge carriers in solar cells with a nanostructured ZnO electrode; Trennung und Rekombination von Ladungstraegern in Solarzellen mit nanostrukturierter ZnO-Elektrode

    Energy Technology Data Exchange (ETDEWEB)

    Tornow, Julian

    2010-03-02

    The publication investigates electrodes consisting of ZnO nanorods deposited hydrothermally on conductive glass substrate (conductive glass). The electrodes are transparent to visible light and are sensitized for solar cell applications by a light-absorbing layer which in this case consists either of organometallic dye molecules (N3) or of an indium sulfide layer with a thickness of only a few nanometers. Electric contacts for the sensitized electrode are either made of a liquid electrolyte or of a perforated solid electrolyte. Methods of analysis were impedance spectroscopy, time-resolved photocurrent measurements, and time-resolved microwave photoconductivity. A high concentration of up to 10{sup 20} was found in the ZnO nanorods. The dye-sensitized solar cell showed exessively fast recombination with the oxydized dye molecules (sub-{mu}s) but a slow recombination rate with the oxydized redox ions of the electrolyte (ms). In the indium sulfide solar cells, the charges are separated at the contact with the ZnO nanorods while contact with the perforated CuSCN conductor is not charge-separating. Recombination takes place in indium sulfide, directly between the perforated conductor and ZnO, and also via the charge-separating contact with decreasing rates.

  1. Opto-electronic properties of charged conjugated molecules

    NARCIS (Netherlands)

    Fratiloiu, S.

    2007-01-01

    The aim of this thesis is to provide fundamental insight into the nature and opto-electronic properties of charge carriers on conjugated oligomers and polymers. Electronic structure, optical absorption properties and distribution of charge carriers along the chains of different conjugated materials

  2. Charge dynamic characteristics in corona-charged polytetrafluoroethylene film electrets

    Institute of Scientific and Technical Information of China (English)

    陈钢进; 肖慧明; 朱春凤

    2004-01-01

    In this work, the charge dynamics characteristics of injection, transport and decay in porous and non-porous polytetrafluoroethylene (PTFE) film electrets were investigated by means of corona charging, isothermal and thermal stimulating surface-potential decay measurements. The results showed that the initial surface potential, whether positively or negatively charging, is much higher in non-porous PTFE than in porous PTFE. For porous film the value of initial sur-face potentials increases with increase of film thickness. Higher charging temperature can remarkably improve charge stability. The charge dynamics are correlated to materials microstructure according to their scanning electron micrographs.For non-porous PTFE films, polarizability change of C-F bonds is the main origin of electret charges; but for porous PTFE film a large number of bulk and interface type traps are expected because of the greater area of interface and higher crys-tallinity.

  3. Charge dynamic characteristics in corona-charged polytetrafluoroethylene film electrets

    Institute of Scientific and Technical Information of China (English)

    陈钢进; 肖慧明; 朱春凤

    2004-01-01

    In this work, the charge dynamics characteristics of injection, transport and decay in porous and non-porous polytetrafluoroethylene (PTFE) film electrets were investigated by means of corona charging, isothermal and thermal stimulating surface-potential decay measurements. The results showed that the initial surface potential, whether positively or negatively charging, is much higher in non-porous PTFE than in porous PTFE. For porous film the value of initial surface potentials increases with increase of film thickness. Higher charging temperature can remarkably improve charge stability. The charge dynamics are correlated to materials microstructure according to their scanning electron micrographs.For non-porous PTFE films, polarizability change of C-F bonds is the main origin of electret charges; but for porous PTFE film a large number of bulk and interface type traps are expected because of the greater area of interface and higher crystallinity.

  4. Charge Transport in LDPE Nanocomposites Part I—Experimental Approach

    Directory of Open Access Journals (Sweden)

    Anh T. Hoang

    2016-03-01

    Full Text Available This work presents results of bulk conductivity and surface potential decay measurements on low-density polyethylene and its nanocomposites filled with uncoated MgO and Al2O3, with the aim to highlight the effect of the nanofillers on charge transport processes. Material samples at various filler contents, up to 9 wt %, were prepared in the form of thin films. The performed measurements show a significant impact of the nanofillers on reduction of material’s direct current (dc conductivity. The investigations thus focused on the nanocomposites having the lowest dc conductivity. Various mechanisms of charge generation and transport in solids, including space charge limited current, Poole-Frenkel effect and Schottky injection, were utilized for examining the experimental results. The mobilities of charge carriers were deduced from the measured surface potential decay characteristics and were found to be at least two times lower for the nanocomposites. The temperature dependencies of the mobilities were compared for different materials.

  5. Oxytocin Injection

    Science.gov (United States)

    Oxytocin injection is used to begin or improve contractions during labor. Oxytocin also is used to reduce bleeding after childbirth. ... other medications or procedures to end a pregnancy. Oxytocin is in a class of medications called oxytocic ...

  6. Cidofovir Injection

    Science.gov (United States)

    Cidofovir injection is used along with another medication (probenecid) to treat cytomegaloviral retinitis (CMV retinitis) in people with acquired immunodeficiency syndrome (AIDS). Cidofovir is in a class of medications called antivirals. ...

  7. Brivaracetam Injection

    Science.gov (United States)

    ... older. Brivaracetam in a class of medications called anticonvulsants. It works by decreasing abnormal electrical activity in ... older (about 1 in 500 people) who took anticonvulsants like brivaracetam injection to treat various conditions during ...

  8. Fluconazole Injection

    Science.gov (United States)

    ... and fungal infections of the eye, prostate (a male reproductive organ), skin and nails. Fluconazole injection is ... Motrin, others) and naproxen (Aleve, Anaprox, Naprelan); oral contraceptives (birth control pills); oral medication for diabetes such ...

  9. Certolizumab Injection

    Science.gov (United States)

    ... and swelling and scales on the skin), active ankylosing spondylitis (a condition in which the body attacks the ... continues. When certolizumab injection is used to treat ankylosing spondylitis, it is usually given every 2 weeks for ...

  10. Butorphanol Injection

    Science.gov (United States)

    ... not understand the directions.Butorphanol injection may be habit-forming. Do not use a larger dose, use ... tiredness difficulty falling asleep or staying asleep unusual dreams headache constipation stomach pain feeling hot flushing pain, ...

  11. Dexamethasone Injection

    Science.gov (United States)

    ... body tissues,) gastrointestinal disease, and certain types of arthritis. Dexamethasone injection is also used for diagnostic testing. ... effects.tell your doctor if you have a fungal infection (other than on your skin or nails). ...

  12. Hydrocortisone Injection

    Science.gov (United States)

    ... own organs), gastrointestinal disease, and certain types of arthritis. Hydrocortisone injection is also used to treat certain ... effects.tell your doctor if you have a fungal infection (other than on your skin or nails). ...

  13. Methylprednisolone Injection

    Science.gov (United States)

    ... own organs), gastrointestinal disease, and certain types of arthritis. Methylprednisolone injection is also used to treat certain ... effects.tell your doctor if you have a fungal infection (other than on your skin or nails). ...

  14. Ciprofloxacin Injection

    Science.gov (United States)

    ... attack) . Ciprofloxacin may also be used to treat bronchitis and sinus infections, but should not be used for these conditions if there are other treatment options available. Ciprofloxacin injection is in a class ...

  15. Golimumab Injection

    Science.gov (United States)

    Golimumab injection is used alone or with other medications to relieve the symptoms of certain autoimmune disorders ( ... did not help or could not be tolerated. Golimumab is in a class of medications called tumor ...

  16. Evolocumab Injection

    Science.gov (United States)

    ... autoinjector in hot water, microwave, or place in sunlight.Before you use evolocumab injection, look at the ... chills pain or burning during urination muscle or back pain dizziness stomach pain Some side effects can be ...

  17. Glatiramer Injection

    Science.gov (United States)

    ... To inject glatiramer, follow these steps: Remove one blister pack from the carton of glatiramer syringes and place ... paper label and remove the syringe from the blister pack. Check your prefilled syringe to be sure it ...

  18. Insulin Injection

    Science.gov (United States)

    ... or buttocks. Do not inject insulin into muscles, scars, or moles. Use a different site for each ... you are using insulin.Alcohol may cause a decrease in blood sugar. Ask your doctor about the ...

  19. Tigecycline Injection

    Science.gov (United States)

    ... in a person who was not in the hospital), skin infections, and infections of the abdomen (area between the ... that developed in people who were in a hospital or foot infections in people who have diabetes. Tigecycline injection is ...

  20. Fludarabine Injection

    Science.gov (United States)

    Fludarabine injection is used to treat chronic lymphocytic leukemia (CLL; a type of cancer of the white ... a reliable method of birth control to prevent pregnancy during this time. Talk to your doctor for ...

  1. Ferumoxytol Injection

    Science.gov (United States)

    Ferumoxytol injection is used to treat iron-deficiency anemia (a lower than normal number of red blood ... pharmacist what other prescription and nonprescription medications, vitamins, nutritional supplements, and herbal products you are taking or ...

  2. Alemtuzumab Injection

    Science.gov (United States)

    Alemtuzumab injection is used to treat B-cell chronic lymphocytic leukemia (a slowly developing cancer in which ... of white blood cell accumulate in the body). Alemtuzumab is in a class of medications called monoclonal ...

  3. Alirocumab Injection

    Science.gov (United States)

    ... further decrease the amount of low-density lipoprotein (LDL) cholesterol ('bad cholesterol') in the blood. Alirocumab injection is ... antibodies. It works by blocking the production of LDL cholesterol in the body to decrease the amount of ...

  4. Chloramphenicol Injection

    Science.gov (United States)

    ... an arm or leg sudden changes in vision pain with eye movement Chloramphenicol injection may cause a condition called gray syndrome in premature and newborn infants. There have also been reports of gray ...

  5. Acoustic charge manipulation in semiconductor nanostructures for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Voelk, Stefan

    2010-07-30

    Within this thesis, the influence of a surface acoustic wave (SAW) on the luminescence of semiconductor nanostructures is investigated. Beginning with the physics of low-dimensional semiconductor structures, the quantum mechanical and optical properties of quantum dot (QD) systems are discussed. In particular, intrinsic parameters of QDs such as morphology, composition, strain and occupation with carriers are taken into account. Subsequently, the influence of an applied electric field and of externally induced strain are introduced. From this general approach, the discussion is focused to quantum posts (QPs) which are columnar shaped semiconductor nanostructures. In contrast to conventional self-assembled QDs, the height of the QPs can be controlled by the epitaxial growth process. Due to the adjustable height, electronic states and therefore the exciton transition energies can be tailored. Furthermore, QPs are embedded in a matrix-quantum-well structure which has important influence on the carrier dynamic if a SAW is excited on the sample. Mainly, two effects have to be considered regarding the interaction of charge carriers with SAWs: deformation potential coupling and acousto-electric coupling. For the investigated material and used SAW frequencies, acousto-electric coupling dominates the interaction between charges and SAW. For a quantum well (QW) structure, the periodic band modulation dissociates excitons into sequential stripes of electrons and holes which then are conveyed by the SAW. This so called bipolar transport or charge conveyance effect can be used to inject carriers into remote QD structures and has already been demonstrated for QD ensembles. The injection of carriers into individual quantum posts is successfully demonstrated for the first time within this work. The spectrally resolved photoluminescence (PL) data of individual QPs show an unexpected switching of PL lines which cannot be induced by varying other parameters, e.g. the laser intensity

  6. Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

    Institute of Scientific and Technical Information of China (English)

    DENG Ning; TANG Jian-Shi; ZHANG Lei; ZHANG Shu-Chao; CHEN Pei-Yi

    2010-01-01

    @@ For ferromagnetic metal(FM)/semiconductor(SC)structure with ohmic contact,the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated.Based on the general model we established here,spin injection efficiency under different injection current levels is calculated.Under a reasonable high injection current,current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current.An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact,which means that efficient spin injection from FM into SC via ohmic contact is possible.The reported dependence of current polarization on temperature is verified quantitatively.To achieve even larger spin injection efficiency,a gradient doping semiconductor is suggested to enhance the drift current effect.

  7. Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

    Science.gov (United States)

    Riuttanen, L.; Kivisaari, P.; Svensk, O.; Vasara, T.; Myllys, P.; Oksanen, J.; Suihkonen, S.

    2015-03-01

    Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.

  8. Low-charge-state linac

    Energy Technology Data Exchange (ETDEWEB)

    Shepard, K.W.; Kim, J.W.

    1995-08-01

    A design is being developed for a low-charge-state linac suitable for injecting ATLAS with a low-charge-state, radioactive beam. Initial work indicates that the existing ATLAS interdigital superconducting accelerating structures, together with the superconducting quadrupole transverse focussing element discussed above, provides a basis for a high-performance low-charge-state linac. The initial 2 or 3 MV of such a linac could be based on a normally-conducting, low-frequency RFQ, possibly combined with 24-MHz superconducting interdigital structures. Beam dynamics studies of the whole low-charge-state post-accelerator section were carried out in early FY 1995.

  9. Peptide-Carrier Conjugation

    DEFF Research Database (Denmark)

    Hansen, Paul Robert

    2015-01-01

    To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....

  10. Development of radioisotope labeled polymeric carriers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung Jin; Jeong, Jea Min; Hwang, Hyun Jeong [Ewha Womans University, Seoul (Korea)

    2000-04-01

    This research was performed with the aim of developing polymeric radioisotope or drug carriers for obtaining efficient diagnostic therapeutic efficacy. As polymers, polyethylene oxides, polylactides, polycaprolactone were chosen to prepare the devices including micelle system, microemulsion, nanospheres. In addition, anticancer drug loaded polylactide microparticulates were fabricated as a regional chemotherapeutics for the treatment of cancer. Technetium or radioactive iodine was labeled to the polymeric carriers via ligands such as DTPA and HPP, respectively. Labeling efficiency was above 90% and stable enough up to 24 hours. Moreover, injected polymer carriers demonstrated higher blood maintenance and bone uptake than Tin colloid, a control. These results suggested that radioisotope carrying polymeric particulate are promising tools for diagnosing blood vessels or bones. Besides, anticancer drug loaded particulates demonstrated appropriate maintenance of therapeutic concentration and localization. Therefore it was proposed that this therapeutic system may be potential as a cancer therapy modality. 20 refs., 24 figs.,5 tabs. (Author)

  11. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  12. p -shell carrier assisted dynamic nuclear spin polarization in single quantum dots at zero external magnetic field

    Science.gov (United States)

    Fong, C. F.; Ota, Y.; Harbord, E.; Iwamoto, S.; Arakawa, Y.

    2016-03-01

    Repeated injection of spin-polarized carriers in a quantum dot (QD) leads to the polarization of nuclear spins, a process known as dynamic nuclear spin polarization (DNP). Here, we report the observation of p-shell carrier assisted DNP in single QDs at zero external magnetic field. The nuclear field—measured by using the Overhauser shift of the singly charged exciton state of the QDs—continues to increase, even after the carrier population in the s-shell saturates. This is also accompanied by an abrupt increase in nuclear spin buildup time as p-shell emission overtakes that of the s shell. We attribute the observation to p-shell electrons strongly altering the nuclear spin dynamics in the QD, supported by numerical simulation results based on a rate equation model of coupling between electron and nuclear spin system. Dynamic nuclear spin polarization with p-shell carriers could open up avenues for further control to increase the degree of nuclear spin polarization in QDs.

  13. Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC,continuous expressions of surface potential and inversion layer carrier density are derived.Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.

  14. Trapped charge densities in Al2O3-based silicon surface passivation layers

    Science.gov (United States)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2016-06-01

    In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al2O3 layers are grown by atomic layer deposition with very thin (˜1 nm) SiO2 or HfO2 interlayers or interface layers. In SiO2/Al2O3 and HfO2/Al2O3 stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al2O3. In Al2O3/SiO2/Al2O3 or Al2O3/HfO2/Al2O3 stacks, very high total charge densities of up to 9 × 1012 cm-2 are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al2O3 layer thickness between silicon and the HfO2 or the SiO2 interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al2O3 layers opens the possibility to engineer the field-effect passivation in the solar cells.

  15. Composite cam carrier

    Energy Technology Data Exchange (ETDEWEB)

    Wicks, Christopher Donald; Madin, Mark Michael

    2017-03-14

    A cam carrier assembly includes a cylinder head having valves and a camshaft having lobes. A cam carrier has a first side coupled with the cylinder head engaging around the valves and a second side with bearing surfaces supporting the camshaft. A series of apertures extend between the first and second sides for the lobes to interface with the valves. The cam carrier is made of carbon fiber composite insulating the camshaft from the cylinder head and providing substantial weight reduction to an upper section of an associated engine.

  16. Asymmetric Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Rasmussen, Peter Omand;

    2010-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on the measurements, it is shown that the spread effect of the discrete components from the motor current spectra is very effective independent of the modulation...... index. The flat motor current spectrum generates an acoustical noise close to the white noise, which may improve the acoustical performance of the drive. The new carrier wave is easy to implement digitally, without employing any external circuits. The modulation method can be used in open, as well...

  17. Dexrazoxane Injection

    Science.gov (United States)

    ... are used to treat or prevent certain side effects that may be caused by chemotherapy medications. Dexrazoxane injection (Zinecard) is used to prevent ... this medication.If you experience a serious side effect, you or your doctor ... (FDA) MedWatch Adverse Event Reporting program online (http://www.fda.gov/ ...

  18. Fluorouracil Injection

    Science.gov (United States)

    ... of a doctor who is experienced in giving chemotherapy medications for cancer. Treatment with fluorouracil injection may cause serious side effects. ... this medication.If you experience a serious side effect, you or your doctor ... (FDA) MedWatch Adverse Event Reporting program online (http://www.fda.gov/ ...

  19. Cyanocobalamin Injection

    Science.gov (United States)

    ... used to treat inherited conditions that decrease the absorption of vitamin B12 from the intestine. Cyanocobalamin injection is also sometimes used to treat methylmalonic aciduria (an inherited disease in which the body cannot break down protein) and is sometimes given to unborn babies to ...

  20. Lanreotide Injection

    Science.gov (United States)

    Lanreotide injection is used to treat people with acromegaly (condition in which the body produces too much growth hormone, causing enlargement of the hands, feet, and facial features; joint pain; and other symptoms) who have not successfully, or cannot be treated ...

  1. Effect of Molecular Orientation, on Photovoltaic Efficiency and Carrier Transport, in a New Semiconducting Polymer

    Science.gov (United States)

    Kažukauskas, V.; Pranaitis, M.; Sentein, C.; Rocha, L.; Raimond, P.; Duyssens, I.; van, I.; Severen; Lutsen, L.; Cleij, T.; Vanderzande, D.

    2008-03-01

    New functionalized soluble poly(p-phenylene vinylene) derivative bearing polar molecules was designed and synthesized in order to investigate effects of molecular orientation in polymer photovoltaic devices. The active polar molecule is the 4-(N-butyl-N-2-hydroxyethyl)-1- nitro-benzene group. The grafting of the push-pull molecule with a donor/transmitter/acceptor structure, possessing a large ground state dipole moment, enables the molecular orientation by a dc electric field. An internal electric field stored in such system facilitates exciton dissociation and improves charge transport in single-layer devices. In our systems an increase in the external quantum efficiency by a factor of about 1.5 to 2 is estimated. The associated effects of orientation on the carrier injection and transport properties were evidenced.

  2. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  3. Bending Two-Dimensional Materials To Control Charge Localization and Fermi-Level Shift.

    Science.gov (United States)

    Yu, Liping; Ruzsinszky, Adrienn; Perdew, John P

    2016-04-13

    High-performance electronics requires the fine control of semiconductor conductivity. In atomically thin two-dimensional (2D) materials, traditional doping technique for controlling carrier concentration and carrier type may cause crystal damage and significant mobility reduction. Contact engineering for tuning carrier injection and extraction and carrier type may suffer from strong Fermi-level pinning. Here, using first-principles calculations, we predict that mechanical bending, as a unique attribute of thin 2D materials, can be used to control conductivity and Fermi-level shift. We find that bending can control the charge localization of top valence bands in both MoS2 and phosphorene nanoribbons. The donor-like in-gap edge-states of armchair MoS2 ribbon and their associated Fermi-level pinning can be removed by bending. A bending-controllable new in-gap state and accompanying direct-indirect gap transition are predicted in armchair phosphorene nanoribbon. We demonstrate that such emergent bending effects are realizable. The bending stiffness as well as the effective thickness of 2D materials are also derived from first principles. Our results are of fundamental and technological relevance and open new routes for designing functional 2D materials for applications in which flexuosity is essential.

  4. Ultrafast charge-transfer in organic photovoltaic interfaces: geometrical and functionalization effects.

    Science.gov (United States)

    Santos, Elton J G; Wang, W L

    2016-09-21

    Understanding the microscopic mechanisms of electronic excitation in organic photovoltaic cells is a challenging problem in the design of efficient devices capable of performing sunlight harvesting. Here we develop and apply an ab initio approach based on time-dependent density functional theory and Ehrenfest dynamics to investigate photoinduced charge transfer in small organic molecules. Our calculations include mixed quantum-classical dynamics with ions moving classically and electrons quantum mechanically, where no experimental external parameter other than the material geometry is required. We show that the behavior of photocarriers in zinc phthalocyanine (ZnPc) and C60 systems, an effective prototype system for organic solar cells, is sensitive to the atomic orientation of the donor and the acceptor units as well as the functionalization of covalent molecules at the interface. In particular, configurations with the ZnPc molecules facing on C60 facilitate charge transfer between substrate and molecules that occurs within 200 fs. In contrast, configurations where ZnPc is tilted above C60 present extremely low carrier injection efficiency even at longer times as an effect of the larger interfacial potential level offset and higher energetic barrier between the donor and acceptor molecules. An enhancement of charge injection into C60 at shorter times is observed as binding groups connect ZnPc and C60 in a dyad system. Our results demonstrate a promising way of designing and controlling photoinduced charge transfer on the atomic level in organic devices that would lead to efficient carrier separation and maximize device performance.

  5. The value of energy carriers

    NARCIS (Netherlands)

    Gool, W. van

    1987-01-01

    The value of energy carriers can be described thermodynamically by the amount of heat (enthalpy method) or work (exergy or availability method) that can be obtained from the carriers. Prices for energy carriers are used in economics to express their values. The prices for energy carriers are often r

  6. Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

    Science.gov (United States)

    Cai, Yu; Sha, Shuang

    2016-09-01

    This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers.

  7. Characterization of interface traps on MOS transistor submicronic by the three level charge pumping

    Science.gov (United States)

    Sellami, M.; Bouchemat, M.; Kahouadji, M.; Djahli, F.

    2005-05-01

    Because of its efficiency, its high precision and its easy use regarding to classical techniques of Si-Sio2 (C-V, DLTS, Conductanceldots), interface characterization, the charge pumping technique has seen a large evolution these years. Many improvements have been made other, derivation techniques have been developed (at three-level charge pumping, spectroscopic charge pumping ldots) This technique is particularly used for very slight geometry MOS transistors damaging, where other techniques have no utility. This damaging often leads to the creation of a fixed trapped charge in the oxide coat and active electronically defaults in the oxide Semi-conductor interface after the application of ageing constraint (ionizing radiation, injection carrier). This ageing is so pronounced when the dimensions are slight this represents the main obstacle that the microelectronics must face. In this article we simulate the three-level charge pumping technique with SPICE3F4 simulator. This simulation will permit the obtaining of spatial and energetic spread of defaults at the interface.

  8. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Borja, Juan; Plawsky, Joel L., E-mail: plawsky@rpi.edu; Gill, William N. [Howard P. Isermann Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lu, T.-M. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Bakhru, Hassaram [University at Albany' s College of Nanoscale Science and Engineering (CNSE), Albany, New York 12203 (United States)

    2014-02-28

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k{sub 0}⋅(t+1){sup β−1}, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

  9. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    Science.gov (United States)

    Borja, Juan; Plawsky, Joel L.; Lu, T.-M.; Bakhru, Hassaram; Gill, William N.

    2014-02-01

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k =k0ṡ(t+1)β -1, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523-5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

  10. CHARGE syndrome

    Directory of Open Access Journals (Sweden)

    Prasad Chitra

    2006-09-01

    Full Text Available Abstract CHARGE syndrome was initially defined as a non-random association of anomalies (Coloboma, Heart defect, Atresia choanae, Retarded growth and development, Genital hypoplasia, Ear anomalies/deafness. In 1998, an expert group defined the major (the classical 4C's: Choanal atresia, Coloboma, Characteristic ears and Cranial nerve anomalies and minor criteria of CHARGE syndrome. Individuals with all four major characteristics or three major and three minor characteristics are highly likely to have CHARGE syndrome. However, there have been individuals genetically identified with CHARGE syndrome without the classical choanal atresia and coloboma. The reported incidence of CHARGE syndrome ranges from 0.1–1.2/10,000 and depends on professional recognition. Coloboma mainly affects the retina. Major and minor congenital heart defects (the commonest cyanotic heart defect is tetralogy of Fallot occur in 75–80% of patients. Choanal atresia may be membranous or bony; bilateral or unilateral. Mental retardation is variable with intelligence quotients (IQ ranging from normal to profound retardation. Under-development of the external genitalia is a common finding in males but it is less apparent in females. Ear abnormalities include a classical finding of unusually shaped ears and hearing loss (conductive and/or nerve deafness that ranges from mild to severe deafness. Multiple cranial nerve dysfunctions are common. A behavioral phenotype for CHARGE syndrome is emerging. Mutations in the CHD7 gene (member of the chromodomain helicase DNA protein family are detected in over 75% of patients with CHARGE syndrome. Children with CHARGE syndrome require intensive medical management as well as numerous surgical interventions. They also need multidisciplinary follow up. Some of the hidden issues of CHARGE syndrome are often forgotten, one being the feeding adaptation of these children, which needs an early aggressive approach from a feeding team. As the child

  11. Injectable, Biodegradable Hydrogels for Tissue Engineering Applications

    Directory of Open Access Journals (Sweden)

    Huaping Tan

    2010-03-01

    Full Text Available Hydrogels have many different applications in the field of regenerative medicine. Biodegradable, injectable hydrogels could be utilized as delivery systems, cell carriers, and scaffolds for tissue engineering. Injectable hydrogels are an appealing scaffold because they are structurally similar to the extracellular matrix of many tissues, can often be processed under relatively mild conditions, and may be delivered in a minimally invasive manner. This review will discuss recent advances in the field of injectable hydrogels, including both synthetic and native polymeric materials, which can be potentially used in cartilage and soft tissue engineering applications.

  12. Comparison of Charging Characteristics of Polymerized and Pulverized Toners

    Institute of Scientific and Technical Information of China (English)

    Yasushi Hoshino; Tsunenori Nakanishi; Ye Zhou; Hidetaka Ishihara

    2004-01-01

    Toner charge is very important in electrophotographic printing process. Although many studies on toner charging mechanism have been carried out, the mechanism is very complex and the understanding of toner charging characteristics is not yet sufficient. Toner charge distribution is measured by E-SPART (electrical single particle aerodynamic relaxation time) analyzer, which can measure the size and charge of toner. The measured toners are polymerized and pulverized type. Charging is carried out as follows: the toner is mixed with the carrier and the mixture is bottled into the roller, and mixed by rotating the roller. Toner charge dependences on toner wt% are compared between polymerized and pulverized toner.

  13. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  14. Enhanced carrier transport along edges of graphene devices.

    Science.gov (United States)

    Chae, Jungseok; Jung, Suyong; Woo, Sungjong; Baek, Hongwoo; Ha, Jeonghoon; Song, Young Jae; Son, Young-Woo; Zhitenev, Nikolai B; Stroscio, Joseph A; Kuk, Young

    2012-04-11

    The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.

  15. Intestinal solute carriers

    DEFF Research Database (Denmark)

    Steffansen, Bente; Nielsen, Carsten Uhd; Brodin, Birger

    2004-01-01

    A large amount of absorptive intestinal membrane transporters play an important part in absorption and distribution of several nutrients, drugs and prodrugs. The present paper gives a general overview on intestinal solute carriers as well as on trends and strategies for targeting drugs and/or pro...

  16. Autonomous component carrier selection

    DEFF Research Database (Denmark)

    Garcia, Luis Guilherme Uzeda; Pedersen, Klaus; Mogensen, Preben

    2009-01-01

    in local areas, basing our study case on LTE-Advanced. We present extensive network simulation results to demonstrate that a simple and robust interference management scheme, called autonomous component carrier selection allows each cell to select the most attractive frequency configuration; improving...

  17. Charged Leptons

    CERN Document Server

    Albrecht, J; Babu, K; Bernstein, R H; Blum, T; Brown, D N; Casey, B C K; Cheng, C -h; Cirigliano, V; Cohen, A; Deshpande, A; Dukes, E C; Echenard, B; Gaponenko, A; Glenzinski, D; Gonzalez-Alonso, M; Grancagnolo, F; Grossman, Y; Harnik, R; Hitlin, D G; Kiburg, B; Knoepfe, K; Kumar, K; Lim, G; Lu, Z -T; McKeen, D; Miller, J P; Ramsey-Musolf, M; Ray, R; Roberts, B L; Rominsky, M; Semertzidis, Y; Stoeckinger, D; Talman, R; Van De Water, R; Winter, P

    2013-01-01

    This is the report of the Intensity Frontier Charged Lepton Working Group of the 2013 Community Summer Study "Snowmass on the Mississippi", summarizing the current status and future experimental opportunities in muon and tau lepton studies and their sensitivity to new physics. These include searches for charged lepton flavor violation, measurements of magnetic and electric dipole moments, and precision measurements of the decay spectrum and parity-violating asymmetries.

  18. A study of charge transfer kinetics in dye-sensitized surface conductivity solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, Dennis

    2011-05-15

    The efficiency of the quasi-solid-state dye-sensitized solar cell developed by Junghaenel and Tributsch, the so-called Nano Surface Conductivity Solar Cell (NSCSC), was improved from 2% to 3.5% introducing a compact TiO{sub 2} underlayer, modifying the surface of the mesoporous TiO{sub 2} electrode, optimizing the deposition process of the electrolyte film, and replacing the platinum counter electrode by a carbon layer. Space-resolved photocurrent images revealed the importance of a homogeneous distribution of the electrolyte film. An uneven dispersion led to localized areas of high and low photocurrents, whereas the latter were attributed to an insufficient concentration of the redox couple. Impedance spectroscopy was performed on cells containing different concentrations of the redox couple. By modeling the spectra using an equivalent circuit with a transmission line of resistive and capacitive elements, the characteristic parameters of electron transport in the TiO{sub 2}, such as diffusion length and electron lifetime were obtained. The measurements indicated that the transport of the positive charge to the counter electrode is the main process limiting the efficiency of the cells. Excess charge carrier decay in functioning devices was analyzed by contactless transient photoconductance measurements in the microwave frequency range (TRMC). The lifetime of the photogenerated charge carriers was observed to decrease with increasing applied potential, reaching its maximum close to the opencircuit potential of the cell, where the photocurrent density was minimal, i.e. the potential dependent decay observed was limited by the injection of electrons into the front contact. The functioning of this NSCSC indicated that the transport of the positive charge occurs by solid-state diffusion at the surface of the TiO{sub 2} particles. TRMC measurements on subset devices in the form of sensitized TiO{sub 2} layers revealed charge carrier kinetics strongly dependent on the

  19. Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

    Institute of Scientific and Technical Information of China (English)

    Tuo Shi; Bing Xiong; Changzheng Sun; Yi Luo

    2011-01-01

    A back-illuminated mesa-Structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodi-ode (PD) is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-μm-diameter PD is as high as 0.83 A/W, and the direct current (DC) saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency (RP) power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current (AC) conditions, the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.%@@ A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 Ma.

  20. Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells

    KAUST Repository

    Melianas, Armantas

    2015-11-05

    In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium.

  1. Low-charge-state RFQ injector

    Energy Technology Data Exchange (ETDEWEB)

    Shepard, K.W.; Kim, J.W.

    1995-08-01

    Preliminary design work was done for a short, normally-conducting RFQ entrance section for a low-charge-state linac. Early results indicate that a low- frequency (12 MHz) RFQ, operated on a high-voltage platform, and injected with a pre-bunched beam, can provide ATLAS quality beams of ions of charge-to-mass ratio less than 1/132.

  2. Screening in crystalline liquids protects energetic carriers in hybrid perovskites

    Science.gov (United States)

    Zhu, Haiming; Miyata, Kiyoshi; Fu, Yongping; Wang, Jue; Joshi, Prakriti P.; Niesner, Daniel; Williams, Kristopher W.; Jin, Song; Zhu, X.-Y.

    2016-09-01

    Hybrid lead halide perovskites exhibit carrier properties that resemble those of pristine nonpolar semiconductors despite static and dynamic disorder, but how carriers are protected from efficient scattering with charged defects and optical phonons is unknown. Here, we reveal the carrier protection mechanism by comparing three single-crystal lead bromide perovskites: CH3NH3PbBr3, CH(NH2)2PbBr3, and CsPbBr3. We observed hot fluorescence emission from energetic carriers with ~102-picosecond lifetimes in CH3NH3PbBr3 or CH(NH2)2PbBr3, but not in CsPbBr3. The hot fluorescence is correlated with liquid-like molecular reorientational motions, suggesting that dynamic screening protects energetic carriers via solvation or large polaron formation on time scales competitive with that of ultrafast cooling. Similar protections likely exist for band-edge carriers. The long-lived energetic carriers may enable hot-carrier solar cells with efficiencies exceeding the Shockley-Queisser limit.

  3. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  4. A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET'S

    Institute of Scientific and Technical Information of China (English)

    Liu Hongxia; Hao Yue; Zhu Jiangang

    2002-01-01

    The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET's degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET's degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET's and PMOSFET's are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.

  5. Photo-induced charge separation across the graphene-TiO2 interface is faster than energy losses: a time-domain ab initio analysis.

    Science.gov (United States)

    Long, Run; English, Niall J; Prezhdo, Oleg V

    2012-08-29

    Graphene-TiO(2) composites exhibit excellent potential for photovoltaic applications, provided that efficient photoinduced charge separation can be achieved at the interface. Once charges are separated, TiO(2) acts as an electron carrier, while graphene is an excellent hole conductor. However, charge separation competes with energy losses that can result in rapid electron-hole annihilation inside metallic graphene. Bearing this in mind, we investigate the mechanisms and, crucially, time scales of electron transfer and energy relaxation processes. Using nonadiabatic molecular dynamics formulated within the framework of time-domain density functional theory, we establish that the photoinduced electron transfer occurs several times faster than the electron-phonon energy relaxation (i.e., charge separation is efficient in the presence of electron-phonon relaxation), thereby showing that graphene-TiO(2) interfaces can form the basis for photovoltaic and photocatalytic devices using visible light. We identify the mechanisms for charge separation and energy losses, both of which proceed by rapid, phonon-induced nonadiabatic transitions within the manifold of the electronic states. Electron injection is ultrafast, owing to strong electronic coupling between graphene and TiO(2). Injection is promoted by both out-of-plane graphene motions, which modulate the graphene-TiO(2) distance and interaction, and high-frequency bond stretching and bending vibrations, which generate large nonadiabatic coupling. Both electron injection and energy transfer, injection in particular, accelerate for photoexcited states that are delocalized between the two subsystems. The theoretical results show excellent agreement with the available experimental data [Adv. Funct. Mater. 2009, 19, 3638]. The state-of-the-art simulation generates a detailed time-domain atomistic description of the interfacial charge separation and relaxation processes that are fundamental to a wide variety of applications

  6. The effect of the hole injection layer on the performance of single layer organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wenjin, Zeng; Ran, Bi; Hongmei, Zhang, E-mail: iamhmzhang@njupt.edu.cn, E-mail: iamwhuang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023 (China); Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023 (China); Wei, Huang, E-mail: iamhmzhang@njupt.edu.cn, E-mail: iamwhuang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023 (China)

    2014-12-14

    Efficient single-layer organic light-emitting diodes (OLEDs) were reported based on a green fluorescent dye 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7–tetramethyl-1H,5H,11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T). Herein, poly(3,4-ethylenedioxy thiophene) poly(styrene sulfonate) were, respectively, applied as the injection layer for comparison. The hole transport properties of the emission layer with different hole injection materials are well investigated via current-voltage measurement. It was clearly found that the hole injection layers (HILs) play an important role in the adjustment of the electron/hole injection to attain transport balance of charge carriers in the single emission layer of OLEDs with electron-transporting host. The layer of tris-(8-hydroxyquinoline) aluminum played a dual role of host and electron-transporting materials within the emission layer. Therefore, appropriate selection of hole injection layer is a key factor to achieve high efficiency OLEDs with single emission layer.

  7. Charge Carriers and Excited States in Supramolecular Materials

    NARCIS (Netherlands)

    Patwardhan, S.

    2011-01-01

    The field of organic electronics has been thriving for the last decades due to growing commercial interest. One of the advantages of using organic materials as semiconductors is the possibility to tune their optoelectronic properties by modifying the chemical structure and organization of the buildi

  8. Carrier-phonon interactions in hybrid halide perovskites probed with ultrafast anisotropy studies

    Science.gov (United States)

    Rivett, Jasmine P. H.; Richter, Johannes M.; Price, Michael B.; Credgington, Dan; Deschler, Felix

    2016-09-01

    Hybrid halide perovskites are at the frontier of optoelectronic research due to their excellent semiconductor properties and solution processability. For this reason, much attention has recently been focused on understanding photoexcited charge-carrier generation and recombination in these materials. Conversely, very few studies have so far been devoted to understanding carrier-carrier and carrier-phonon scattering mechanisms in these materials. This is surprising given that carrier scattering mechanisms fundamentally limit charge-carrier motilities and therefore the performance of photovoltaic devices. We apply linear polarization selective transient absorption measurements to polycrystalline CH3NH3PbBr3 hybrid halide perovskite films as an effective way of studying the scattering processes in these materials. Comparison of the photo induced bleach signals obtained when the linear polarizations of the pump and probe are aligned either parallel or perpendicular to one another, reveal a significant difference in spectral intensity and shape within the first few hundred femtoseconds after photoexcitation.

  9. Analyzing Affect of Image Charge in Space Charge Effect

    Institute of Scientific and Technical Information of China (English)

    ZhangXueying; XuHushan; JiaFei; LiWenfei

    2003-01-01

    There is an increasing requirement of high injection current and highly charged ion beams for accelerators at many laboratories, such as CERN, GSI, GANIL and IMP, with the development of super-conducting ECR source in recent.years. In this case, the space charge effect becomes a major concern when the beam current is as high as tens of mA. In fact, the faradic field induced by the image charges will be come into the metallic surfaces while the beams are transported in a vacuum tube or in between two plates. In order to ensure studying the space charge effect in reason, it is necessary to investigate the effect from such a field.

  10. Spectral dependence of carrier lifetimes in silicon for photovoltaic applications

    Science.gov (United States)

    Roller, John F.; Li, Yu-Tai; Dagenais, Mario; Hamadani, Behrang H.

    2016-12-01

    Charge carrier lifetimes in photovoltaic-grade silicon wafers were measured by a spectral-dependent, quasi-steady-state photoconductance technique. Narrow bandwidth light emitting diodes were used to excite excess charge carriers within the material, and the effective lifetimes of these carriers were measured as a function of wavelength and intensity. The dependence of the effective lifetime on the excitation wavelength was then analyzed within the context of an analytical model relating effective lifetime to the bulk lifetime and surface recombination velocity of the material. The agreement between the model and the experimental data provides validation for this technique to be used at various stages of the solar cell production line to investigate the quality of the passivation layers and the bulk properties of the material.

  11. Development of Passenger Air Carriers

    Directory of Open Access Journals (Sweden)

    Igor Diminik

    2006-09-01

    Full Text Available The work presents the development of carriers in passengerair traffic, and the focus is on the development and operationsof carriers in chartered passenger transport. After the SecondWorld War, there were only scheduled air carriers. The need formass transport of tourists resulted in the development of chartercarriers or usage of scheduled carriers under different commercialconditions acceptable for tourism. Eventually also low-costcarriers appeared and they realize an increasing share in thepassenger transport especially in the aviation developed countries.

  12. 47 CFR 69.155 - Per-minute residual interconnection charge.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Per-minute residual interconnection charge. 69... Per-minute residual interconnection charge. (a) Local exchange carriers may recover a per-minute residual interconnection charge on originating access. The maximum such charge shall be the lower of:...

  13. Hybridization-Induced Carrier Localization at the C60/ZnO Interface

    Energy Technology Data Exchange (ETDEWEB)

    Kelly, Leah L.; Racke, David A.; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K.; Berry, Joseph J.; Graham, Samuel; Nordlund, Dennis; Monti, Oliver L. A.

    2016-05-25

    Electronic coupling and ground-state charge transfer at the C60/ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

  14. Determination of the carrier envelope phase for short, circularly polarized laser pulses

    Science.gov (United States)

    Titov, Alexander I.; Kämpfer, Burkhard; Hosaka, Atsushi; Nousch, Tobias; Seipt, Daniel

    2016-02-01

    We analyze the impact of the carrier envelope phase on the differential cross sections of the Breit-Wheeler and the generalized Compton scattering in the interaction of a charged electron (positron) with an intensive ultrashort electromagnetic (laser) pulse. The differential cross sections as a function of the azimuthal angle of the outgoing electron have a clear bump structure, where the bump position coincides with the value of the carrier phase. This effect can be used for the carrier envelope phase determination.

  15. Exploiting the bead-injection approach in the integrated sequential injection Lab-on-Valve format using hydrophobic packing materials for on-line matrix removal and preconcentration of trace levels of cadmium in environmental and biological samples via formation of non-charged chelates prior

    DEFF Research Database (Denmark)

    Miró, Manuel; Jonczyk, Sylwia; Wang, Jianhua;

    2003-01-01

    The concept of renewable microcolumns within the conduits of an automated single injection lab-on-valve system was exploited in a sorption/elution fashion using sorbents of hydrophobic nature. The scheme's practical applicability was demonstrated for the electrothermal atomic absorption spectrome...

  16. Anomalous carrier dynamics in bilayer graphene in presence of mechanical strain: A theoretical study

    Science.gov (United States)

    Enamullah

    2016-05-01

    One of the optical response of charge carriers in bilayer graphene, anomalous Rabi oscillation is investigated theoretically in presence of mechanical strain. Rabi oscillation in extreme non-resonance regime is known as anomalous Rabi oscillation, has been predicted theoretically in single layer graphene by new technique known as asymptotic rotating wave approximation. In this article, we have shown a strong dependence of anomalous Rabi oscillations of charge carriers on the mechanical strain near the vanishing point of conduction and valance band.

  17. Capture and release of carriers in InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Porte, Henrik; Daghestani, N.;

    2009-01-01

    We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD s...

  18. 42 CFR 405.512 - Carriers' procedural terminology and coding systems.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 2 2010-10-01 2010-10-01 false Carriers' procedural terminology and coding systems... Determining Reasonable Charges § 405.512 Carriers' procedural terminology and coding systems. (a) General. Procedural terminology and coding systems are designed to provide physicians and third party payers with...

  19. Metastable states of plasma particles close to a charged surface

    Energy Technology Data Exchange (ETDEWEB)

    Shavlov, A. V., E-mail: shavlov@ikz.ru [The Institute of the Earth Cryosphere, RAS Siberian branch, 625000, P.O. 1230, Tyumen (Russian Federation); Tyumen State Oil and Gas University, 38, Volodarskogo St., 625000, Tyumen (Russian Federation); Dzhumandzhi, V. A. [The Institute of the Earth Cryosphere, RAS Siberian branch, 625000, P.O. 1230, Tyumen (Russian Federation)

    2015-09-15

    The free energy of the plasma particles and the charged surface that form an electroneutral system is calculated on the basis of the Poisson-Boltzmann equation. It is shown that, owing to correlation of light plasma particles near the charged surface and close to heavy particles of high charge, there can be metastable states in plasma. The corresponding phase charts of metastable states of the separate components of plasma, and plasma as a whole, are constructed. These charts depend on temperature, the charge magnitude, the size of the particles, and the share of the charge of the light carriers out of the total charge of the plasma particles.

  20. Domain wall stability in ferroelectrics with space charges

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Yinan, E-mail: zuo@mfm.tu-darmstadt.de; Genenko, Yuri A.; Klein, Andreas; Stein, Peter; Xu, Baixiang [Institute of Materials Science, Technische Universität Darmstadt, D-64287 Darmstadt (Germany)

    2014-02-28

    Significant effect of semiconductor properties on domain configurations in ferroelectrics is demonstrated, especially in the case of doped materials. Phase field simulations are performed for ferroelectrics with space charges due to donors and electronic charge carriers. The free charges introduced thereby can act as a source for charge compensation at domain walls with uncompensated polarization bound charges. Results indicate that the equilibrium position of a domain wall with respect to its rotation in a head-to-head or a tail-to-tail domain configuration depends on the charge defect concentration and the Fermi level position.