WorldWideScience

Sample records for charge carrier injection

  1. Influence of injected charge carriers on photocurrents in polymer solar cells

    NARCIS (Netherlands)

    Wehenkel, D.J.; Koster, L.J.A.; Wienk, M.M.; Janssen, R.A.J.

    2012-01-01

    We determine and analyze the photocurrent Jph in polymer solar cells under conditions where, no, one, or two different charge carriers can be injected by choosing appropriate electrodes and compare the experimental results to simulations based on a drift-diffusion device model that accounts for

  2. Sensitized charge carrier injection into organic crystals studied by isotope effects in weak magnetic fields

    International Nuclear Information System (INIS)

    Bube, W.; Michel-Beyerle, M.E.; Haberkorn, R.; Steffens, E.

    1977-01-01

    The magnetic field (H approximately 50 Oe) dependence of the rhodamine sensitized triplet exciton density in anthracene crystals is influenced by isotopic substitution. This confirms the hyperfine interaction as mechanism explaining the change of the spin multiplicity in the initially formed singlet state of the radical pair. The isotope effect occurs in the sensitizing dye ( 14 N/ 15 N) rather than at the molecular site of the injected charge within the crystal. This can be understood in terms of the high hopping frequency of the charge carriers as compared to the time constant of the hyperfine induced singlet-triplet transition. Since the dye molecules adsorb in an oriented fashion, the angular dependence of the magnetic field modulation of the triplet exciton density can be interpreted without assuming any additional interactions. (Auth.)

  3. Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols

    NARCIS (Netherlands)

    Asadi, Kamal; Gholamrezaie, Fatemeh; Smits, Edsger C. P.; Blom, Paul W. M.; de Boer, Bert

    2007-01-01

    Charge carrier injection into two semiconducting polymers is investigated in field-effect transistors using gold source and drain electrodes that are modified by self-assembled monolayers of alkanethiols and perfluorinated alkanethiols. The presence of an interfacial dipole associated with the

  4. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, Felix J.; Vogelsang, Jan, E-mail: jan.vogelsang@physik.uni-regensburg.de; Lupton, John M. [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätsstrasse 31, 93053 Regensburg (Germany)

    2016-06-27

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the opposite: the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The results are of interest to developing a microscopic understanding of the intrinsic charge-exciton quenching interaction in devices.

  5. Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

    Science.gov (United States)

    Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

    2017-07-01

    Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

  6. Optimization of the charge-carrier injection in organic light-emitting diodes; Optimierung der Ladungstraegerinjektion in organische Leuchtdioden

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Ralf

    2009-07-01

    Nowadays based on resource shortage and climate warming there is a big interest in the use of power-saving lighting sources. Therefore the research on white organic light emitting devices (OLEDs) has gained importance during the last years. To obtain high power efficiencies in OLEDs it is necessary to provide low driving voltages. That can be realised by the use of doped transport layers, in which donors and acceptors are coevaporated with organic transport materials. In this thesis I discuss novel p-type and n-type doping materials for small organic molecules which decrease the ohmic loss in organic transport layers used in OLEDs. This reduction of the resistance is caused by an increase of the intrinsic charge carrier density and therefore an increase of the conductivity. First single layer devices are used to analyse the properties of potential doping materials by varying the doping concentration. The tested p-doping materials are commercially available metal oxides (MoO{sub 3} and Re{sub 2}O{sub 7}) and metal-organic complexes. Both metal oxides show a strong conductivity improvement of up to 7 orders of magnitude. The investigated n-doping materials are alkali salts, metal-organic and organic complexes. Among the alkali salts Cs{sub 2}CO{sub 3} is the best material in test with a conductivity enhancement of up to 7 orders of magnitude. For this material class I focused on the question whether the metal cation or the organic anion causes the doping effect. Using similar Caesium salts differently strong doping effects were obtained. Therefore I came to the conclusion that beside the metal cation also the anion plays a role for the doping effect. Secondly I performed a series of multilayer devices for two doping materials (Re{sub 2}O{sub 7} as acceptor and Cs{sub 2}CO{sub 3} as donor) to separate the transport and injection enhancement. The results show that a doped transport layer improves the hole or electron injection into an undoped material by several orders

  7. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-08-04

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

  8. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

    2014-01-01

    The design and Mg-doping profile of AlN/Al 0.7 Ga 0.3 N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm 2

  9. H- charge exchange injection systems

    International Nuclear Information System (INIS)

    Ankenbrandt, C.; Curtis, C.; Hojvat, C.; Johnson, R.P.; Owen, C.; Schmidt, C.; Teng, L.; Webber, R.C.

    1980-01-01

    The techniques and components required for injection of protons into cyclic accelerators by means of H - charge exchange processes are reviewed, with emphasis on the experience at Fermilab. The advantages of the technique are described. The design and performance of the system of injection of H - ions into the Fermilab Booster are detailed. (Auth.)

  10. Study of Charge Carrier Transport in GaN Sensors

    Science.gov (United States)

    Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas

    2016-01-01

    Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects. PMID:28773418

  11. Charge carrier dynamics investigation of CuInS{sub 2} quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Ke; Sui, Ning; Zhang, Liquan; Wang, Yinghui, E-mail: yinghui-wang@outlook.com; Liu, Qinghui, E-mail: liuqinghui@jlu.edu.cn; Tan, Mingrui [Jilin University, Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics (China); Zhou, Qiang [Jilin University, Key Laboratory of Superhard Materials, College of Physics (China); Zhang, Hanzhuang, E-mail: zhanghz@jlu.edu.cn [Jilin University, Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics (China)

    2016-12-15

    The role of ZnS shell on the photo-physical properties within CuInS{sub 2}/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS{sub 2} and CuInS{sub 2}/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

  12. One-carrier free space charge motion under applied voltage

    International Nuclear Information System (INIS)

    Camargo, P.C.; Ferreira, G.F.L.

    1976-01-01

    The system of partial differential equations describing the one-carrier free space-charge motion under a given applied voltage is transformed into a system of two ordinary differential equations. The method is applied to find the external current injection [pt

  13. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  14. Solid state cloaking for electrical charge carrier mobility control

    Science.gov (United States)

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  15. Hot carrier injection degradation under dynamic stress

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

    2011-01-01

    In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under V g = 0 V and V d = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under V g = −1.8 V and V d = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  17. Hot Charge Carrier Transmission from Plasmonic Nanostructures

    Science.gov (United States)

    Christopher, Phillip; Moskovits, Martin

    2017-05-01

    Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes—processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal-semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases.

  18. Charge-carrier mobilities in disordered semiconducting polymers: effects of carrier density and electric field [refereed

    NARCIS (Netherlands)

    Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, de D.M.; Michels, M.A.J.

    2006-01-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solns. of the Master equation, we study the dependence of the charge-carrier mobility

  19. Charge-carrier mobilities in disordered semiconducting polymers : effects of carrier density and electric field

    NARCIS (Netherlands)

    Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, D.M. de; Michels, M.A.J.

    2006-01-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier

  20. Importance of polaron effects for charge carrier mobility above and ...

    Indian Academy of Sciences (India)

    It is shown that the scattering of polaronic charge carriers and bosonic Cooper pairs at acoustic and optical phonons are responsible for the charge carrier mobility above and below the PG temperature. We show that the energy scales of the binding energies of large polarons and polaronic Cooper pairs can be identified by ...

  1. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    International Nuclear Information System (INIS)

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei

    2014-01-01

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T −γ ) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced

  2. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2014-12-07

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T{sup −γ}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

  3. Magnetic Generation due to Mass Difference between Charge Carriers

    OpenAIRE

    Chen, Shi; Dan, JiaKun; Chen, ZiYu; Li, JianFeng

    2013-01-01

    The possibility of spontaneous magnetization due to the "asymmetry in mass" of charge carriers in a system is investigated. Analysis shows that when the masses of positive and negative charge carriers are identical, no magnetization is predicted. However, if the masses of two species are different, spontaneous magnetic field would appear, either due to the equipartition of magnetic energy or due to fluctuations together with a feedback mechanism. The conditions for magnetization to occur are ...

  4. Mobility of charge carriers in porous silicon layers

    International Nuclear Information System (INIS)

    Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2008-01-01

    The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption

  5. One-carrier free space charge motion under applied voltage

    Energy Technology Data Exchange (ETDEWEB)

    de ALMEIDA, L E.C.; FERREIRA, G F.L. [SAO PAULO UNIV., SAO CARLOS (BRAZIL). INSTITUTO DE FISICA E QUIMICA

    1975-12-01

    It is shown how to transform the system of partial differential equations, describing the free one-carrier space charge motion in solid dielectrics under a given applied voltage and while the charge distribution touches only one of the electrodes, into a first order ordinary differential equation from whose solution all the interesting quantities may be easily derived. It was found that some charge distributions can display current reversal.

  6. Charge carrier coherence and Hall effect in organic semiconductors

    Science.gov (United States)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  7. Charge carrier coherence and Hall effect in organic semiconductors.

    Science.gov (United States)

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  8. Charge carrier relaxation model in disordered organic semiconductors

    International Nuclear Information System (INIS)

    Lu, Nianduan; Li, Ling; Sun, Pengxiao; Liu, Ming

    2013-01-01

    The relaxation phenomena of charge carrier in disordered organic semiconductors have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the pure hopping transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results reveal that the increase of electric field and temperature can promote the relaxation effect in disordered organic semiconductors, while the increase of material disorder will weaken the relaxation. The proposed model can explain well the stretched-exponential law by adopting the appropriate parameters. The calculation shows a good agreement with the experimental data for organic semiconductors

  9. Charge Carrier Dynamics at Silver Nanocluster-Molecular Acceptor Interfaces

    KAUST Repository

    Almansaf, Abdulkhaleq

    2017-07-01

    A fundamental understanding of interfacial charge transfer at donor-acceptor interfaces is very crucial as it is considered among the most important dynamical processes for optimizing performance in many light harvesting systems, including photovoltaics and photo-catalysis. In general, the photo-generated singlet excitons in photoactive materials exhibit very short lifetimes because of their dipole-allowed spin radiative decay and short diffusion lengths. In contrast, the radiative decay of triplet excitons is dipole forbidden; therefore, their lifetimes are considerably longer. The discussion in this thesis primarily focuses on the relevant parameters that are involved in charge separation (CS), charge transfer (CT), intersystem crossing (ISC) rate, triplet state lifetime, and carrier recombination (CR) at silver nanocluster (NCs) molecular-acceptors interfaces. A combination of steady-state and femto- and nanosecond broadband transient absorption spectroscopies were used to investigate the charge carrier dynamics in various donor-acceptor systems. Additionally, this thesis was prolonged to investigate some important factors that influence the charge carrier dynamics in Ag29 silver NCs donor-acceptor systems, such as the metal doping and chemical structure of the nanocluster and molecular acceptors. Interestingly, clear correlations between the steady-state measurements and timeresolved spectroscopy results are found. In the first study, we have investigated the interfacial charge transfer dynamics in positively charged meso units of 5, 10, 15, 20-tetra (1- methyl-4-pyridino)-porphyrin tetra (p-toluene sulfonate) (TMPyP) and neutral charged 5, 10, 15, 20-tetra (4-pyridyl)-porphyrin (TPyP), with negatively charged undoped and gold (Au)- doped silver Ag29 NCs. Moreover, this study showed the impact of Au doping on the charge carrier dynamics of the system. In the second study, we have investigated the interfacial charge transfer dynamics in [Pt2 Ag23 Cl7 (PPh3

  10. Photoinduced reversible switching of charge carrier mobility in conjugated polymers

    Czech Academy of Sciences Publication Activity Database

    Weiter, M.; Navrátil, J.; Vala, M.; Toman, Petr

    2009-01-01

    Roč. 48, č. 1 (2009), 10401_1-10401_6 ISSN 1286-0042 R&D Projects: GA ČR GA203/06/0285; GA AV ČR KAN401770651 Institutional research plan: CEZ:AV0Z40500505 Keywords : polymers * switch * charge carrier mobility Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.756, year: 2009

  11. Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

    International Nuclear Information System (INIS)

    Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

    1984-01-01

    The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

  12. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy

    Science.gov (United States)

    Ponseca, C. S., Jr.; Sundström, V.

    2016-03-01

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  13. OPTICALLY BASED CHARGE INJECTION SYSTEM FOR IONIZATION DETECTORS

    International Nuclear Information System (INIS)

    CHEN, H.; CITTERIO, M.; LANNI, F.; LEITE, M.A.L.; RADEKA, V.; RESCIA, S.; TAKAI, H.

    2001-01-01

    An optically coupled charge injection system for ionization based radiation detectors which allows a test charge to be injected without the creation of ground loops has been developed. An ionization like signal from an external source is brought into the detector through an optical fiber and injected into the electrodes by means of a photodiode. As an application example, crosstalk measurements on a liquid Argon electromagnetic calorimeter readout electrodes were performed

  14. Charge carrier recombination dynamics in perovskite and polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paulke, Andreas; Kniepert, Juliane; Kurpiers, Jona; Wolff, Christian M.; Schön, Natalie; Brenner, Thomas J. K.; Neher, Dieter [Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24–25, 14476, Potsdam (Germany); Stranks, Samuel D. [Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Snaith, Henry J. [Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)

    2016-03-14

    Time-delayed collection field experiments are applied to planar organometal halide perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) based solar cells to investigate charge carrier recombination in a fully working solar cell at the nanosecond to microsecond time scale. Recombination of mobile (extractable) charges is shown to follow second-order recombination dynamics for all fluences and time scales tested. Most importantly, the bimolecular recombination coefficient is found to be time-dependent, with an initial value of ca. 10{sup −9} cm{sup 3}/s and a progressive reduction within the first tens of nanoseconds. Comparison to the prototypical organic bulk heterojunction device PTB7:PC{sub 71}BM yields important differences with regard to the mechanism and time scale of free carrier recombination.

  15. Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

    CERN Document Server

    Kazakevich, L A

    2003-01-01

    It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

  16. Charge injection and transport in quantum confined and disordered systems

    NARCIS (Netherlands)

    Houtepen, A.J.

    2007-01-01

    Quantum dots and conducting polymers are modern semiconductors with a high potential for applications such as lasers, LEDs, displays, solar cells etc. These applications require the controlled addition of charge carriers into the material and knowledge of the details of charge transport. This thesis

  17. Charge Injection and Transport in Organic Nanofibers

    DEFF Research Database (Denmark)

    Kjelstrup-Hansen, Jakob; Bøggild, Peter; Rubahn, H. G.

    2007-01-01

    the injection barrier height equal to the difference between the metal electrode work function and the HOMO energy level of the organic semiconductor. Semiquantitative modeling suggests that the weak temperature dependence is due to injection into a distribution of states rather than into a single energy level...

  18. Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies

    DEFF Research Database (Denmark)

    Leißner, Till; Jensen, Per Baunegaard With; Liu, Yiming

    2017-01-01

    The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic...... interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical...... and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier...

  19. Charge Injection and Current Flow in Organic Light Emitting Diodes

    Science.gov (United States)

    Smith, D. L.; Davids, P. S.; Heller, C. M.; Crone, B. K.; Campbell, I. H.; Barashkov, N. N.; Ferraris, J. P.

    1997-03-01

    We present a comparison between device model calculations and current-voltage measurements for a series of organic LED structures. The Schottky energy barrier of an injecting contact is systematically varied by changing the metal used to form that contact. The current-voltage characteristics of the structures are described using a device model that considers charge injection, transport and space charge effects in the low mobility organic material. Charge injection into the organic material is controlled by the Schottky energy barrier of the metal/organic contact. For Schottky energy barriers greater than about 0.4 eV injection into the organic material is the principal limitation to current flow. In this regime the net injected charge density is relatively small, the electric field in the structure is nearly uniform, and space charge effects are not important. For smaller energy barriers relatively large charge densities are injected into the organic material and space charge effects become the dominant limit to current flow. The measured current-voltage characteristics are quantitatively described by the device model using Schottky barrier values independently determined by internal photoemission and electroabsorption measurements.

  20. Charge-carrier dynamics and Coulomb effects in semiconductor tetrapods

    International Nuclear Information System (INIS)

    Mauser, Christian

    2011-01-01

    In this thesis the Coulomb interaction and its influence on localization effects and dynamics of charge carriers in semiconductor nanocrystals were studied. In the studied nanostructures it deals with colloidal tetrapod heterostructures, which consist of a cadmium selenide (CdSe) core and four tetraedrical grown cadmium sulfide (CdS) respectively cadmium telluride (CdTe) legs, which exhibit a type-I respectively type-II band transition. The dynamics and interactions were studied by means of photoluminescence (PL) and absorption measurements both on the ensemble and on single nanoparticles, as well as time-resolved PL and transient absorption spectroscopy. Additionally theoretical simulations of the wave-function distributions were performed, which are based on the effective-mass approximation. The special band structure of the CdSe/CdS tetrapods offers a unique possibility to study the Coulomb interaction. The flat conduction band in these heterostructures makes the electron via the Coulomb interaction sensitive to the localization position of the hole within the structure. The valence band has instead a potential maximum in the CdSe, which leads to a directed localization of the hole and the photoluminescence of the core. Polarization-resolved measurements showed hereby an anisotropy of the photoluminescence, which could be explained by means of simulations of the wave-function distribution with an asymmetry at the branching point. Charge-carrier localization occur mainly both in longer structures and in trap states in the CdS leg and can be demonstrated in form of a dual emission from a nanocrystal. The charge-carrier dynamics of electron and hole in tetrapods is indeed coupled by the Coulomb interaction, however it cannot be completely described in an exciton picture. The coupled dynamics and the Coulomb interaction were studied concerning a possible influence of the geometry in CdSe/CdS nanorods and compared with those of the tetrapods. The interactions of the

  1. Charge Carrier Transport Properties of Vacuum Evaporated Anthrylvinylbenzene Thin Films

    Directory of Open Access Journals (Sweden)

    Haikel HRICHI

    2014-05-01

    Full Text Available The charge carrier conduction processes and dielectric properties of two new materials based on anthracene core structure, 1-(9 anthrylvinyl-4-benzyloxybenzene (AVB and 1,4- bis(9-anthrylvinylbenzene (AV2B diodes have been investigated using dc current density–voltage (J–V and AC impedance spectroscopy (100 Hz–10 MHz. The DC electrical properties of ITO/anthracene derivative /Al device showing an ohmic behavior at low voltages and switches to space charge limited current (SCLC conduction with exponential trap distribution at higher voltages. The best performance device was achieved from ITO/AVB/Al structure showing the high charge carrier mobility which has also been evaluated from SCLC as 6.55´10-6 cm/Vs. According to the impedance spectroscopy results the structures were modeled by equivalent circuit designed as a parallel resistor Rp and capacitor Cp network in series with resistor Rs. The evolution of the electrical parameters with frequency and bias voltage of these anthracene-based systems has been discussed. The conductivity s(w evolution with frequency and bias voltage was studied for ITO/anthracene derivatives/Al devices. The dc conductivity sdc for these devices has been determined. The ac conductivity sac showed a variation in angular frequency as A.ws with a critical exponent s< 1 suggesting a hopping conduction mechanism at high frequency.

  2. Kinetics of photo-activated charge carriers in Sn:CdS

    Energy Technology Data Exchange (ETDEWEB)

    Patidar, Manju Mishra, E-mail: manjumishra.iuc@gmail.com; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V. [UGC-DAE CSR, University Campus, Khandwa Road, Indore (M.P.)-452001 (India); Panda, Richa [S.S. Jain Subodh Girls College, Airport Road Sanganer, Jaipur - 302029 (India)

    2016-05-23

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd{sub 1-x}Sn{sub x}S (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ{sub 1}, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  3. Charge-carrier transport in large-area epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kisslinger, Ferdinand; Popp, Matthias; Weber, Heiko B. [Lehrstuhl fuer Angewandte Physik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Jobst, Johannes [Huygens-Kamerlingh Onnes Laboratorium, Leiden Institute of Physics, Leiden University (Netherlands); Shallcross, Sam [Lehrstuhl fuer theoretische Festkoerperphysik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany)

    2017-11-15

    We present an overview of recent charge carrier transport experiments in both monolayer and bilayer graphene, with emphasis on the phenomena that appear in large-area samples. While many aspects of transport are based on quantum mechanical concepts, in the large-area limit classical corrections dominate and shape the magnetoresistance and the tunneling conductance. The discussed phenomena are very general and can, with little modification, be expected in any atomically thin 2D conductor. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Electronic structure of charge carriers in a polysilane quantum wire

    International Nuclear Information System (INIS)

    Kumagai, J.; Yoshida, H.; Ichikawa, T.

    1997-01-01

    The ESR, ESEEM and spectrophotometric studies on polysilane radical ions revealed that charge carriers, hole and conducting electrons, are not delocalized all over the Si-Si main chain but confined to a part of the chain composed of only six Si atoms, probably near the branch on the main chain. Comparison of the ESR spectra of the radical cations and anions revealed that the hole can migrate from the main chain to an adjacent polymer chain via the side chains, whereas the conducting electron can not migrate since the side chains act as good intermolecular insulators for the electron. (author)

  5. The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.

    Science.gov (United States)

    Wang, Z B; Helander, M G; Greiner, M T; Lu, Z H

    2010-05-07

    The Fermi level has historically been assumed to be the only energy-level from which carriers are injected at metal/semiconductor interfaces. In traditional semiconductor device physics, this approximation is reasonable as the thermal distribution of delocalized states in the semiconductor tends to dominate device characteristics. However, in the case of organic semiconductors the weak intermolecular interactions results in highly localized electronic states, such that the thermal distribution of carriers in the metal may also influence device characteristics. In this work we demonstrate that the Fermi-Dirac distribution of carriers in the metal has a much more significant impact on charge injection at metal/organic interfaces than has previously been assumed. An injection model which includes the effect of the Fermi-Dirac electron distribution was proposed. This model has been tested against experimental data and was found to provide a better physical description of charge injection. This finding indicates that the thermal distribution of electronic states in the metal should, in general, be considered in the study of metal/organic interfaces.

  6. Control of charge carrier dynamics in disordered conjugated polymers

    Energy Technology Data Exchange (ETDEWEB)

    Hertel, Dirk [Physical Chemistry, University of Cologne, Luxemburgerstr. 116, 50939 Cologne, Germany, (Germany)

    2011-07-01

    We developed a new method to probe charge carrier mobility on ultrafast time scale. It is based on electric field induced second harmonic generation. The method is applied to prototypical amorphous conjugated polymers of the polyphenylene- and polyfluorene-type. Typically the carrier mobility in these organic polymers decreases with time in a power law fashion from about 1 cm{sup 2}Vs{sup -1} at 1 ps to its stationary value of about 10{sup -6} cm{sup 2}Vs{sup -1} in hundreds of ns. The dynamics of the mobility is discussed. It is shown, that in nanoscale devices the macroscopic mobility is not adequate to describe charge transport. We study the influence of disorder, morphology and temperature on ultrafast transport. At early times the transport is dominated by tunneling and disorder plays already an essential role. Comparison of transient photocurrents with Monte-Carlo simulation reveals that on-chain transport has to be invoked to rationalize our results. The hopping rates for intrachain transport are much larger compared with interchain transport. The results give access to essential transport properties for the development of advanced theoretical models and may help to design improved solar cells.

  7. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  8. Charge carrier transport mechanisms in nanocrystalline indium oxide

    International Nuclear Information System (INIS)

    Forsh, E.A.; Marikutsa, A.V.; Martyshov, M.N.; Forsh, P.A.; Rumyantseva, M.N.; Gaskov, A.M.; Kashkarov, P.K.

    2014-01-01

    The charge transport properties of nanocrystalline indium oxide (In 2 O 3 ) are studied. A number of nanostructured In 2 O 3 samples with various nanocrystal sizes are prepared by sol–gel method and characterized using various techniques. The mean nanocrystals size varies from 7–8 nm to 18–20 nm depending on the conditions of their preparation. Structural characterizations of the In 2 O 3 samples are performed by means of transmission electron microscopy and X-ray diffraction. The analysis of dc and ac conductivity in a wide temperature range (T = 50–300 K) shows that at high temperatures charge carrier transport takes place over conduction band and at low temperatures a variable range hopping transport mechanism can be observed. We find out that the temperature of transition from one mechanism to another depends on nanocrystal size: the transition temperature rises when nanocrystals are bigger in size. The average hopping distance between two sites and the activation energy are calculated basing on the analysis of dc conductivity at low temperature. Using random barrier model we show a uniform hopping mechanism taking place in our samples and conclude that nanocrystalline In 2 O 3 can be regarded as a disordered system. - Highlights: • In 2 O 3 samples with various nanocrystal sizes are prepared by sol–gel method. • The mean nanocrystal size varies from 7–8 nm to 18–20 nm. • At high temperatures charge carrier transport takes place over conduction band. • At low temperatures a variable range hopping transport mechanism can be observed. • We show a uniform hopping mechanism taking place in our samples

  9. Astronomical imaging with a low temperature InSb charge injection device (CID)

    International Nuclear Information System (INIS)

    Rouan, D.; Lacombe, F.; Tiphene, D.; Stefanovitch, D.; Phan van, D.

    1986-01-01

    InSb charge injection device (CID) technology focal plane arrays employ two coupled MIS capacitors which collect and store photon-generated charge carriers. Attention is presently given to two-dimensional arrays for 77 K and 4 K operating temperatures in astronomical applications; two such prototypes for ground observations have been developed for use with a 2-m telescope. A CID InSb array is noted to be a useful candidate for the proposed IR Space Observatory's focal plane camera. 7 references

  10. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  11. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    Science.gov (United States)

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

  12. Influence of space charge during the injection in Saturne II

    International Nuclear Information System (INIS)

    Lemaire, J.L.

    Calculations were made in which a fixed acceptance window, established since the beginning of the injection, was considered, and a filling pattern that was a linear function of time was supposed. Evidently, these conditions are no longer met if the space charge modifies the wave number of the beam and, consequently, the filling rate changes with time. The importance of these conditions upon injection for the theoretical operation point zone 3 is reported

  13. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  14. Enhancement of charge carrier recombination efficiency by utilizing a hole-blocking interlayer in white OLEDs

    International Nuclear Information System (INIS)

    Wang Qi; Yu Junsheng; Zhao Juan; Li Ming; Lu Zhiyun

    2013-01-01

    Charge carrier balance and recombination are essential factors relating to the performance of white organic light-emitting devices (WOLEDs). In this study, we discussed the contribution of charge carrier balance in the interlayer-based WOLEDs. By varying the interlayer thickness, the mechanisms of electroluminescent spectral alteration, energy transfer, and especially, charge carrier transport and balance in the devices were investigated and revealed in detail. With a 5 nm thick interlayer tailoring charge carrier transport and recombination, WOLEDs yielded a high power efficiency, current efficiency and external quantum efficiency of 36.1 lm W −1 , 47.1 cd A −1 and 18.3%, respectively. Additionally, single-carrier devices and quantitative analysis were subsequently carried out, demonstrating that the enhancement of carrier recombination efficiency corresponds to the optimization of device performance. (paper)

  15. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    Science.gov (United States)

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells.

  16. Drift of charge carriers in crystalline organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Jingjuan; Si, Wei [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Wu, Chang-Qin, E-mail: cqw@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China)

    2016-04-14

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10{sup 5} V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

  17. Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

    Science.gov (United States)

    Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

    2018-05-01

    A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

  18. Injection space charge: enlargements of flux density functioning point choice

    International Nuclear Information System (INIS)

    Ropert, A.

    In Saturne, injection consists of a synchrobetatron filling of the chamber, with the goal of providing a beam with the following characteristics circulating in the machine: horizontal flux density 90 πmm mrd, vertical flux density 210 πmm mrd, dispersion in moments +- 7 x 10 -3 , and number of particles 2 x 10 12 . The determination of the principal injection parameters was made by means of GOC calculation programs. The goal of this study is to show a certain number of phenomena induced by the forces due to space charge and left suspended up to this point: variations in the intensity injectable into the machine extension of the beam occupation zone in the ν/sub x'/ ν/sub z/ diagram, and turn-turn interactions. The effects of the space charge lead to a deterioration of the injected beam for certain functioning points leading to the selection of a zone in the ν/sub x'/ ν/sub z/ diagram that is particularly suitable for beam injection

  19. i-CELIV technique for investigation of charge carriers transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Važgėla, J., E-mail: julius.vazgela@ff.vu.lt; Genevičius, K.; Juška, G.

    2016-10-20

    The extraction of the injected charge carriers by linearly increasing voltage (i-CELIV) is a promising method for separate analysis of the holes and electrons transport properties in the bulk heterojunction layers. We are demonstrating how to establish the mobility dependence on the electric field and obtain more precise results by performing corrections in transit time by this technique. [6,6]-Phenyl C61 butyric acid methyl ester (PCBM) and poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT) bulk heterojunctions with different blend ratios were experimentally tested with i-CELIV method. The hole and electron mobilities were found to be heavily imbalanced in the optimised 3:1 PCBM:PCPDTBT bulk heterojunction.

  20. Charge exchange injection for Nuclotron and Nuclotron booster

    International Nuclear Information System (INIS)

    Dinev, D.; Mikhajlov, V.

    2000-01-01

    The acceleration of polarized beams is between the major items in the JINR LHE's heavy ion superconducting synchrotron Nuclotron research programme. One effective way to increase the intensities of polarized deuteron beams is the application of the charge exchange injection into the Nuclotron. The paper represents the results of a new analytical description of the heavy ion stripping injection based on the Boltzmann kinetic equation. Expressions for the ion density evolution in the transverse phase plane for the emittance growth due to the elastic scattering and to energy losses in the stripping foil and for the number of successfully stored particles have been derived. These results have been applied to the stripping injection of polarized deuterons into the Nuclotron as well as to the stripping injection of heavy ions into the now under consideration Nuclotron rapid cycling booster. It has been shown that an estimated 40-fold intensity gain could be achieved for the stripping injection of polarized D - into the Nuclotron and that an effective stripping injection of light and medium ions into the booster could be realized

  1. Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Science.gov (United States)

    Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

    2011-08-01

    Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

  2. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  3. Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

    Directory of Open Access Journals (Sweden)

    Y.O. Uhryn

    2017-12-01

    Full Text Available Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equations usage the conductor, semiconductor and superconductor have been introduced. From the obtained temperature dependences of the aforementioned values in superconductor, a supposition of a deciding role of minority charge carriers in the emergence of superconductivity state has been made.

  4. Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation

    Science.gov (United States)

    Rustagi, Avinash; Stanton, C. J.

    2016-11-01

    We study the generation of terahertz (THz) radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a dc electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation (BTE) within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the optical Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the kx-ky plane. The collision integral in the Boltzmann equation includes a term that leads to the thermalization of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a cooling term, which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the direction of velocity of the photoexcited carriers in the external electric field as well as cooling of the photoexcited carriers on a subpicosecond time scale.

  5. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

    2017-03-31

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

  6. Mobility of delocalized charge carriers in an ideal homopolar glass as a function of temperature

    International Nuclear Information System (INIS)

    Iskra, V.D.

    1986-01-01

    The relationship between temperature and the mobility of delocalized charge carriers for an intrinsic random field of a homopolar glass is investigated through application of a method of scattering amplitude calculation based on employing short-lived potential factorization

  7. Importance of polaron effects for charge carrier mobility above and ...

    Indian Academy of Sciences (India)

    Orifjon Ganiev

    2017-05-30

    May 30, 2017 ... sizes and effective masses are large polarons. According ... nating metallic and insulating domains with mobile ... The mobile polaronic carriers are con- ..... [51] T Kondo, Y Hamaya, A D Palczewski, T Takeuchi, J S Wen,.

  8. Recombination in liquid filled ionisation chambers with multiple charge carrier species: Theoretical and numerical results

    International Nuclear Information System (INIS)

    Aguiar, P.; González-Castaño, D.M.; Gómez, F.; Pardo-Montero, J.

    2014-01-01

    Liquid-filled ionisation chambers (LICs) are used in radiotherapy for dosimetry and quality assurance. Volume recombination can be quite important in LICs for moderate dose rates, causing non-linearities in the dose rate response of these detectors, and needs to be corrected for. This effect is usually described with Greening and Boag models for continuous and pulsed radiation respectively. Such models assume that the charge is carried by two different species, positive and negative ions, each of those species with a given mobility. However, LICs operating in non-ultrapure mode can contain different types of electronegative impurities with different mobilities, thus increasing the number of different charge carriers. If this is the case, Greening and Boag models can be no longer valid and need to be reformulated. In this work we present a theoretical and numerical study of volume recombination in parallel-plate LICs with multiple charge carrier species, extending Boag and Greening models. Results from a recent publication that reported three different mobilities in an isooctane-filled LIC have been used to study the effect of extra carrier species on recombination. We have found that in pulsed beams the inclusion of extra mobilities does not affect volume recombination much, a behaviour that was expected because Boag formula for charge collection efficiency does not depend on the mobilities of the charge carriers if the Debye relationship between mobilities and recombination constant holds. This is not the case in continuous radiation, where the presence of extra charge carrier species significantly affects the amount of volume recombination. - Highlights: • Analytical extension of Greening and Boag theories to multiple charge carriers. • Detailed numerical study of process of volume recombination in LICs. • Recombination in pulsed beams is independent of number and mobilities of carriers. • Multiple charge carriers have a significant effect in continuous

  9. Charge injection and transport properties of an organic light-emitting diode

    Directory of Open Access Journals (Sweden)

    Peter Juhasz

    2016-01-01

    Full Text Available The charge behavior of organic light emitting diode (OLED is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low voltage region, whereas the thermionic injection dominates in the high voltage region. This comparison of experimental techniques demonstrates their capabilities of identification of major bottleneck of charge injection and transport.

  10. Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films

    Science.gov (United States)

    Röhr, Jason A.; Moia, Davide; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

    2018-03-01

    Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

  11. Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films.

    Science.gov (United States)

    Röhr, Jason A; Moia, Davide; Haque, Saif A; Kirchartz, Thomas; Nelson, Jenny

    2018-03-14

    Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

  12. Charge transport in disordered organic host-guest systems: effects of carrier density and electric field

    NARCIS (Netherlands)

    Yimer, Y.Y.; Bobbert, P.A.; Coehoorn, R.

    2008-01-01

    We investigate charge transport in disordered organic host–guest systems with a bimodal Gaussian density of states (DOS). The energy difference between the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice with site

  13. Charge transport in disordered organic host-guest systems: effects of carrier density and electric field

    NARCIS (Netherlands)

    Yimer, Y.Y.; Bobbert, P.A.; Coehoorn, R.

    2009-01-01

    We investigate charge transport in disordered organic host–guest systems with a bimodal Gaussian density of states. The energy difference between the peaks of the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice we

  14. Study of charge-carrier relaxation in a disordered organic semiconductor by simulating impedance spectroscopy

    NARCIS (Netherlands)

    Mesta, M.; Cottaar, J.; Coehoorn, R.; Bobbert, P.A.

    2014-01-01

    Impedance spectroscopy is a very sensitive probe of nonstationary charge transport governed by charge-carrier relaxation in devices of disordered organic semiconductors. We simulate impedance spectroscopy measurements of hole-only devices of a polyfluorene-based disordered organic semiconductor by

  15. The state of itinerant charge carriers and thermoelectric effects in correlated oxide metals

    International Nuclear Information System (INIS)

    Kuzemsky, A.L.; Abdus Salam International Centre for Theoretical Physics, Trieste

    2000-10-01

    We analyzed the physics of transport processes and, in particular, the thermoelectric power in the mercurocuprates and other cuprates to get a better insight into the state of the carriers in these compounds. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed. The experimental studies of thermoelectric power showed that the state of carriers in cuprates can be influenced by many complicated scattering processes, however the underlying mechanism for the linear decreasing of the TEP with increasing the temperature for most hole-doped HTSC cuprates is still not yet known. The actual problems related to the complicated mechanisms of carriers scattering above Tc are discussed for a few models of charge transport. A comparison between the analytical and experimental results is also made. It is concluded that the crucial factor for the understanding of the transport properties of correlated oxide metals is the nature of itinerant charge carriers, i.e. renormalized quasiparticles. (author)

  16. Drift of nonequilibrium charge carriers in GaAs-crystals with traps in ultrasonic fields

    International Nuclear Information System (INIS)

    Zaveryukhina, N.N.; Zaveryukhin, B.N.; Zaveryukhina, E.B.

    2007-01-01

    Full text: The drift of nonequilibrium charge carriers in a semiconductor is one of the basic processes determining the efficiency of semiconductor photodetectors. Gallium arsenide possesses certain advantages to other semiconductors in this respect, which allow GaAs-photodetectors to be obtained which possess the maximum efficiency in comparison with all other systems. The purpose of this study was to deepen and expand our knowledge about the acoustic-drift processes in GaAs- crystals. As is known, the drift of nonequilibrium charge carriers in a semiconductor is determined either by external electric fields and/or by internal (built-in) electrostatic fields related to an impurity concentration gradient in the semiconductor. Gallium arsenide is a piezoelectric semiconductor with a structure possessing no center of symmetry. An electric field applied to such a crystal produces deformation of the crystal, and vice versa, any deformation of the crystal leads to the appearance of an induced electric field. Therefore, investigation of the effect of deformation on the drift of nonequilibrium charge carriers is a very important task. One of the possible straining factors is ultrasonic wave. Interaction of the charge carriers with ultrasonic waves in piezo-semiconductors is mediated by piezo exertion. Straining a semiconductor by an ultrasonic wave field gives rise to a force acting upon the charge carriers, which is proportional to the wave vector and the piezoelectric constant of the crystal. The physics of interaction between an ultrasonic wave and nonequilibrium charge carriers in GaAs, as well as in non-polar semiconductors (Si, Ge), consists in the energy and momentum exchange between the wave and the carriers. Besides the ultrasonic waves interact with the traps of carriers and devastate them. These both acoustic effects lead to rise of amplitude of signal of GaAs-photodetectors. (authors)

  17. Charge-reversal nanoparticles: novel targeted drug delivery carriers.

    Science.gov (United States)

    Chen, Xinli; Liu, Lisha; Jiang, Chen

    2016-07-01

    Spurred by significant progress in materials chemistry and drug delivery, charge-reversal nanocarriers are being developed to deliver anticancer formulations in spatial-, temporal- and dosage-controlled approaches. Charge-reversal nanoparticles can release their drug payload in response to specific stimuli that alter the charge on their surface. They can elude clearance from the circulation and be activated by protonation, enzymatic cleavage, or a molecular conformational change. In this review, we discuss the physiological basis for, and recent advances in the design of charge-reversal nanoparticles that are able to control drug biodistribution in response to specific stimuli, endogenous factors (changes in pH, redox gradients, or enzyme concentration) or exogenous factors (light or thermos-stimulation).

  18. Poly(silylene)s: Charge carrier photogeneration and transport

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Eckhardt, A.

    2001-01-01

    Roč. 12, č. 7 (2001), s. 427-440 ISSN 1042-7147 R&D Projects: GA AV ČR IAA4050603; GA AV ČR IAA1050901; GA AV ČR KSK4050111 Institutional research plan: CEZ:AV0Z4050913 Keywords : charge photogeneration * charge-transfer * ion-pair Subject RIV: CC - Organic Chemistry Impact factor: 0.701, year: 2001

  19. In vivo charge injection limits increased after 'unsafe' stimulation

    DEFF Research Database (Denmark)

    Meijs, Suzan; Sørensen, Søren; Rechendorff, Kristian

    2015-01-01

    was not observed with any of the stimulation protocols and no tissue damage was observed for the 20 mA – 200 Hz stimulation group. This indicates that the ‘safe potential window’ may not be applicable in vivo, as no damage was done stimulating with 20 mA at 200 Hz, while damage was done using the same current......The effect of unsafe stimulation on charge injection limits (Qinj) and pulsing capacitance (Cpulse) was investigated. Four stimulation protocols were applied: 20 mA – 200 and 400 Hz, 50 mA – 200 and 400 Hz. Increasing Qinj and Cpulse were observed for all stimulation protocols. Corrosion...

  20. Charge and excitation dynamics in semiconducting polymer layers doped with emitters and charge carrier traps; Ladungstraeger- und Anregungsdynamik in halbleitenden Polymerschichten mit eingemischten Emittern und Ladungstraegerfallen

    Energy Technology Data Exchange (ETDEWEB)

    Jaiser, F

    2006-06-15

    Light-emitting diodes generate light from the recombination of injected charge carriers. This can be obtained in inorganic materials. Here, it is necessary to produce highly ordered crystalline structures that determine the properties of the device. Another possibility is the utilization of organic molecules and polymers. Based on the versatile organic chemistry, it is possible to tune the properties of the semiconducting polymers already during synthesis. In addition, semiconducting polymers are mechanically flexible. Thus, it is possible to construct flexible, large-area light sources and displays. The first light-emitting diode using a polymer emitter was presented in 1990. Since then, this field of research has grown rapidly up to the point where first products are commercially available. It has become clear that the properties of polymer light-emitting diodes such as color and efficiency can be improved by incorporating multiple components inside the active layer. At the same time, this gives rise to new interactions between these components. While components are often added either to improve the charge transport or to change the emission, it has to made sure that other processes are not influenced in a negative manner. This work investigates some of these interactions and describes them with simple physical models. First, blue light-emitting diodes based on polyfluorene are analyzed. This polymer is an efficient emitter, but it is susceptible to the formation of chemical defects that can not be suppressed completely. These defects form electron traps, but their effect can be compensated by the addition of hole traps. The underlying process, namely the changed charge carrier balance, is explained. In the following, blend systems with dendronized emitters that form electron traps are investigated. The different influence of the insulating shell on the charge and energy transfer between polymer host and the emissive core of the dendrimers is examined. In the

  1. Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

    Science.gov (United States)

    Edley, Michael

    Photovoltaic energy is a clean and renewable source of electricity; however, it faces resistance to widespread use due to cost. Nanostructuring decouples constraints related to light absorption and charge separation, potentially reducing cost by allowing a wider variety of processing techniques and materials to be used. However, the large interfacial areas also cause an increased dark current which negatively affects cell efficiency. This work focuses on extremely thin absorber (ETA) solar cells that used a ZnO nanowire array as a scaffold for an extremely thin CdSe absorber layer. Photoexcited electrons generated in the CdSe absorber are transferred to the ZnO layer, while photogenerated holes are transferred to the liquid electrolyte. The transfer of photoexcited carriers to their transport layer competes with bulk recombination in the absorber layer. After charge separation, transport of charge carriers to their respective contacts must occur faster than interfacial recombination for efficient collection. Charge separation and collection depend sensitively on the dimensions of the materials as well as their interfaces. We demonstrated that an optimal absorber thickness can balance light absorption and charge separation. By treating the ZnO/CdSe interface with a CdS buffer layer, we were able to improve the Voc and fill factor, increasing the ETA cell's efficiency from 0.53% to 1.34%, which is higher than that achievable using planar films of the same material. We have gained additional insight into designing ETA cells through the use of dynamic measurements. Ultrafast transient absorption spectroscopy revealed that characteristic times for electron injection from CdSe to ZnO are less than 1 ps. Electron injection is rapid compared to the 2 ns bulk lifetime in CdSe. Optoelectronic measurements such as transient photocurrent/photovoltage and electrochemical impedance spectroscopy were applied to study the processes of charge transport and interfacial recombination

  2. In-situ analysis of microwave conductivity and impedance spectroscopy for evaluation of charge carrier dynamics at interfaces

    Science.gov (United States)

    Choi, Wookjin; Inoue, Junichi; Tsutsui, Yusuke; Sakurai, Tsuneaki; Seki, Shu

    2017-11-01

    A unique concerted analysis comprising non-contact microwave conductivity measurements and impedance spectroscopy was developed to simultaneously assess the charge carrier mobility and injection barriers. The frequency dependence of the microwave conductivity as well as the electrical current was analyzed by applying sinusoidal voltage to determine the equivalent circuit parameters. Based on the temperature dependence of the circuit parameters, the energy of the injection barrier was estimated to be 0.4 eV with the Richardson-Schottky model, and the band-like transport was confirmed with the negative temperature coefficient with the β value of 1.4 in the intra-layer conduction of C8-BTBT. In contrast, the increase in the resistance of the C8-BTBT layer with decreasing temperature implied the occurrence of hopping-like transport in the inter-layer conduction of C8-BTBT.

  3. Supermolecular structure and charge carriers mobilities of perylene diimides

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, Valentina; Pisula, Wojtek; Andrienko, Denis [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany); Kirkpatrick, James [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany); Department of Physics, Imperial College London, London (United Kingdom)

    2008-07-01

    Perylene diimides form columnar phases, where the molecules stack on top of each other and the columns arrange in a regular lattice. The self-organization into well-ordered columns results in the one-dimensional charge transport along the stack of the aromatic cores of the molecules. Most of the discotic molecules which organize in columns are p-type semiconductors, while the class of rylene diimide molecules, to which perylene belongs, forms n-type organic semiconductors. Using atomistic molecular dynamics (MD) simulations we study the columnar phases of perylene diimides and establish correlations between the molecular structure, packing, and dynamical properties of these materials. By using a scheme which combines electronic structure calculations, MD and kinetic Monte Carlo simulations, a correlation is then established between the molecular structure and charge mobility of perylenes columnar mesophases.

  4. Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

    Science.gov (United States)

    Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

    2017-01-01

    Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

  5. Magnetic susceptibility of free charge carriers in bismuth tellurides (Bi2Te3)

    International Nuclear Information System (INIS)

    Guha Thakurta, S.R.; Dutta, A.K.

    1977-01-01

    Principal magnetic susceptibilities of both p- and n-type Bi 2 Te 3 crystals have been measured over the range of temperature 90 deg K to 650 deg K. The observed susceptibilities are diamagnetic and temperature dependent. This temperature dependence has been attributed to the contribution of the free charge carriers to the susceptibilities. From the observed susceptibilities the carrier-susceptibilities have been separately obtained which are found to be paramagnetic. From the total carrier-susceptibilities, the susceptibilities of the carriers which are thermally liberated in the intrinsic region have been separated. From an analysis of the carrier-susceptibilities the band gap and its temperature coefficient have been found out and these compare favourably with those obtained from electrical measurements. (author)

  6. Semiconductor nanoparticles with spatial separation of charge carriers: synthesis and optical properties

    International Nuclear Information System (INIS)

    Vasiliev, Roman B; Dirin, Dmitry N; Gaskov, Alexander M

    2011-01-01

    The results of studies on core/shell semiconductor nanoparticles with spatial separation of photoexcited charge carriers are analyzed and generalized. Peculiarities of the electronic properties of semiconductor/semiconductor heterojunctions formed inside such particles are considered. Data on the effect of spatial separation of charge carriers on the optical properties of nanoparticles including spectral shifts of the exciton bands, absorption coefficients and electron–hole pair recombination times are presented. Methods of synthesis of core/shell semiconductor nanoparticles in solutions are discussed. Specific features of the optical properties of anisotropic semiconductor nanoparticles with the semiconductor/semiconductor junctions are noted. The bibliography includes 165 references.

  7. Hopping mobility of charge carriers in polymers in the earliest stages after their generation

    International Nuclear Information System (INIS)

    Tyutnev, A.P.; Subbotin, A.V.; Chekunaev, N.I.

    1989-01-01

    It has been found that both the photo- and the radiation conductivity of a number of polymers (primarily polyvinylcarbazole, polystyrene, and polyethylene terephthalate) are of a molecular nature, and movement of the generated charge carriers is by a hopping and not by a band mechanism. Analytical expressions for the instantaneous effective mobility and effective displacement of charge carriers in a unitary electric field were obtained in the approximation of isolated pairs of nearest neighbors for four species (monoenergetic, exponential, Gaussian, and bilevel) of energy application of hopping sites randomly distributed in space. Problems of the application of these expressions to real polymers are discussed on the example of polyvinylcarbazole

  8. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    International Nuclear Information System (INIS)

    Murthy, D H K; Houtepen, A J; Savenije, T J; Siebbeles, L D A; Xu, T; Nys, J P; Krzeminski, C; Grandidier, B; Stievenard, D; Chen, W H; Pareige, P; Jomard, F; Patriarche, G; Lebedev, O I

    2011-01-01

    by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

  9. Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

    Science.gov (United States)

    Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

    2017-07-01

    This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

  10. Influence of packing motives on charge Carrier mobility in perylene tetracarboxdiimide derivatives

    Energy Technology Data Exchange (ETDEWEB)

    May, Falk; Andrienko, Denis [Max-Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Center of Smart Interfaces, Darmstadt (Germany)

    2010-07-01

    Discotic mesophases are known for their ability to self-assemble into columnar structures and can serve as semiconducting molecular wires. Charge carrier mobility along these wires strongly depends on molecular packing which is controlled by intermolecular interactions. In this work we compare the influence of side chains on the packing motives of perylene tetracarboxdiimide (PDI) derivatives. Two different (alkyl and glycol) side chains are considered. We first establish how the packing of side chains affects the molecular orientation within the columns using molecular dynamics. Then, using the high temperature non-adiabatic limit of Marcus theory for hopping rates and solving the rate equation for charge transport, we analyze the link between the secondary structure and charge carrier mobility. This analysis eventually provides a pathway to rational design of columnar assemblies of PDI derivatives with high charge mobilities.

  11. Photogeneration of free charge carriers in .pi.-conjugated polymers with bulky side groups

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Jex, M.; Pfleger, Jiří; Jung, J.

    2012-01-01

    Roč. 404, 24 August (2012), s. 48-55 ISSN 0301-0104 R&D Projects: GA ČR(CZ) GAP205/10/2280; GA MŠk(CZ) OC10007 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : photogeneration of free charge carriers * charge transfer states * localized excitation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.957, year: 2012

  12. Modelling of the charge carrier mobility in disordered linear polymer materials

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr; Menšík, Miroslav; Bartkowiak, W.; Pfleger, Jiří

    2017-01-01

    Roč. 19, č. 11 (2017), s. 7760-7771 ISSN 1463-9076 R&D Projects: GA ČR(CZ) GA15-05095S Grant - others:AV ČR(CZ) M200501204 Program:M Institutional support: RVO:61389013 Keywords : charge carrier mobility * conjugated polymer * charge transport modelling Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.123, year: 2016

  13. The Welsh Single-Use Carrier Bag Charge and behavioural spillover

    OpenAIRE

    Thomas, Gregory O.; Poortinga, Wouter; Sautkina, Elena

    2016-01-01

    A Single-Use Carrier Bag Charge (SUCBC) requires bags to be sold for a small fee, instead of free of charge. SUCBCs may produce ‘spillover’ effects, where other pro-environmental attitudes and behaviours could increase or decrease. We investigate the 2011 Welsh SUCBC, and whether spillover occurs in other behaviours and attitudes. Using the Understanding Society Survey (n = 17,636), results show that use of own shopping bags increased in Wales, compared to England and Scotland. Increased use ...

  14. Electronic properties of the charge carriers on oligofluorene backbone

    International Nuclear Information System (INIS)

    Koizumi, Yoshiko; Seki, Shu; Saeki, Akinori; Tagawa, Seiichi

    2007-01-01

    The transient absorption of radical anions and cations of 9,9'-di-n-hexyl-oligofluorene was measured using pulse radiolysis and low-temperature γ-radiolysis techniques. The infrared absorption maxima of both radical anions and cations exhibit red-shift continuously upon elongation of the chain length. The absorption bands are blue-shifted by 0.04-0.07 eV with increasing the temperature from 80 to 106 K. The extinction coefficients were determined by scavenging technique, demonstrating an increase with the elongation of the chain length. The optimized geometry of fluorene trimers, calculated using density functional theory, shows that the oligofluorene molecules are more planar in its charged state than in its neutral state

  15. Mechanism of the free charge carrier generation in the dielectric breakdown

    Science.gov (United States)

    Rahim, N. A. A.; Ranom, R.; Zainuddin, H.

    2017-12-01

    Many studies have been conducted to investigate the effect of environmental, mechanical and electrical stresses on insulator. However, studies on physical process of discharge phenomenon, leading to the breakdown of the insulator surface are lacking and difficult to comprehend. Therefore, this paper analysed charge carrier generation mechanism that can cause free charge carrier generation, leading toward surface discharge development. Besides, this paper developed a model of surface discharge based on the charge generation mechanism on the outdoor insulator. Nernst’s Planck theory was used in order to model the behaviour of the charge carriers while Poisson’s equation was used to determine the distribution of electric field on insulator surface. In the modelling of surface discharge on the outdoor insulator, electric field dependent molecular ionization was used as the charge generation mechanism. A mathematical model of the surface discharge was solved using method of line technique (MOL). The result from the mathematical model showed that the behaviour of net space charge density was correlated with the electric field distribution.

  16. Pressure dependence of excited-state charge-carrier dynamics in organolead tribromide perovskites

    Science.gov (United States)

    Liu, X. C.; Han, J. H.; Zhao, H. F.; Yan, H. C.; Shi, Y.; Jin, M. X.; Liu, C. L.; Ding, D. J.

    2018-05-01

    Excited-state charge-carrier dynamics governs the performance of organometal trihalide perovskites (OTPs) and is strongly influenced by the crystal structure. Characterizing the excited-state charge-carrier dynamics in OTPs under high pressure is imperative for providing crucial insights into structure-property relations. Here, we conduct in situ high-pressure femtosecond transient absorption spectroscopy experiments to study the excited-state carrier dynamics of CH3NH3PbBr3 (MAPbBr3) under hydrostatic pressure. The results indicate that compression is an effective approach to modulate the carrier dynamics of MAPbBr3. Across each pressure-induced phase, carrier relaxation, phonon scattering, and Auger recombination present different pressure-dependent properties under compression. Responsiveness is attributed to the pressure-induced variation in the lattice structure, which also changes the electronic band structure. Specifically, simultaneous prolongation of carrier relaxation and Auger recombination is achieved in the ambient phase, which is very valuable for excess energy harvesting. Our discussion provides clues for optimizing the photovoltaic performance of OTPs.

  17. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  18. Theoretical modeling of influence of the structural disorder on the charge carrier mobility in triphenylene stacks

    Czech Academy of Sciences Publication Activity Database

    Mikolajczyk, M.; Toman, Petr; Bartkowiak, W.

    2010-01-01

    Roč. 485, 1-3 (2010), s. 253-257 ISSN 0009-2614 R&D Projects: GA MŠk MEB050815; GA AV ČR IAA401770601 Institutional research plan: CEZ:AV0Z40500505 Keywords : triphenylene * charge carrier mobility * tight-binding approximation Subject RIV: CD - Macromolecular Chemistry Impact factor: 2.282, year: 2010

  19. The generation of charge carriers in semi conductors – A theoretical study

    CSIR Research Space (South Africa)

    Kiarii, EM

    2017-04-01

    Full Text Available , vol. 678: 167-176 The generation of charge carriers in semi conductors – A theoretical study Kiarii EM Govender, Krishna K Ndungu PG Govender PG ABSTRACT: A systematic study of electronic and optical properties of titanium dioxide under...

  20. Free-carrier-compensated charged domain walls produced with super-bandgap illumination in insulating ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Bednyakov, Petr; Sluka, T.; Tagantsev, A.; Damjanovic, D.; Setter, N.

    2016-01-01

    Roč. 28, č. 43 (2016), s. 9498-9503 ISSN 0935-9648 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : super-bandgap illumination * charged domain walls * ferroelectric BaTiO 3 * free-carrier generation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 19.791, year: 2016

  1. Ab initio theory of charge-carrier conduction in ultrapure organic crystals

    NARCIS (Netherlands)

    Hannewald, K.; Bobbert, P.A.

    2004-01-01

    We present an ab initio description of charge-carrier mobilities in organic molecular crystals of high purity. Our approach is based on Holstein's original concept of small-polaron bands but generalized with respect to the inclusion of nonlocal electron-phonon coupling. By means of an explicit

  2. Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

    NARCIS (Netherlands)

    Luo, H.; Bos, A.J.J.; Dorenbos, P.

    2017-01-01

    Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the

  3. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...

  4. Hall mobility of free charge carriers in highly compensated p-Germanium

    International Nuclear Information System (INIS)

    Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

    2000-01-01

    Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

  5. Modulating the line shape of magnetoconductance by varying the charge injection in polymer light-emitting diodes

    Directory of Open Access Journals (Sweden)

    Nidya Chitraningrum

    2018-02-01

    Full Text Available We fabricate the phenyl-substituted poly(p-phenylene vinylene copolymer (super yellow, SY-PPV-based polymer light-emitting diodes (PLEDs with different device architectures to modulate the injection of opposite charge carriers and investigate the corresponding magnetoconductance (MC responses. At the first glance, we find that all PLEDs exhibit the positive MC responses. By applying the mathematical analysis to fit the curves with two empirical equations of a non-Lorentzian and a Lorentzian function, we are able to extract the hidden negative MC component from the positive MC curve. We attribute the growth of the negative MC component to the reduced interaction of the triplet excitons with charges to generate the free charge carriers as modulated by the applied magnetic field, known as the triplet exciton-charge reaction, by analyzing MC responses for PLEDs of the charge-unbalanced and hole-blocking device configurations. The negative MC component causes the broadening of the line shape in MC curves.

  6. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fengjiao [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Dai, Xiaojuan [Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China; Zhu, Weikun [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Chung, Hyunjoong [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Diao, Ying [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA

    2017-05-10

    Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

  7. Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field

    Energy Technology Data Exchange (ETDEWEB)

    Sinyavskii, E. P., E-mail: sinyavskii@gmail.com [Academy of Sciences of Moldova, Institute of Applied Physics (Moldova, Republic of); Karapetyan, S. A., E-mail: karapetyan.sa@gmail.com [Shevchenko Pridnestrovskii State University (Moldova, Republic of)

    2011-08-15

    The mobility of charge carriers {mu} in a parabolic quantum well in an electric field E directed along the size-confinement axis is calculated. With consideration for scattering of charge carriers at a rough surface, the mobility {mu} is shown to decrease with increasing E. A physical interpretation of this effect is proposed.

  8. Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

    Directory of Open Access Journals (Sweden)

    Tien-Lung Chiu

    2012-06-01

    Full Text Available In this paper, we investigate the carrier injection and transport characteristics in iridium(IIIbis[4,6-(di-fluorophenyl-pyridinato-N,C2']picolinate (FIrpic doped phosphorescent organic light-emitting devices (OLEDs with oxadiazole (OXD as the bipolar host material of the emitting layer (EML. When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD.

  9. Lattice Issues of the CERN PSB with H- Charge exchange injection hardware

    CERN Document Server

    Aiba, M; Chanel, M; Goddard, B; Martini, M; Weterings, W

    2010-01-01

    The motivation for the construction of CERN Linac4 is to improve the performance of the PSB by raising the injection energy and implementing a new H- charge exchange multiturn injection scheme. Lattice perturbations introduced by the new injection hardware are described. Strategies to mitigate the consequences, first by minimizing the additional focusing introduced and, by compensating the residual perturbation, are reported.

  10. Thermal generation and mobility of charge carriers in collective proton transport in hydrogen-bonded chains

    International Nuclear Information System (INIS)

    Peyrard, M.; Boesch, R.; Kourakis, I.

    1991-01-01

    The transport of protons in hydrogen-bonded systems is a long standing problem which has not yet obtained a satisfactorily theoretical description. Although this problem was examined first for ice, it is relevant in many systems and in particular in biology for the transport along proteins or for proton conductance across membranes, an essential process in cell life. The broad relevance makes the study of proton conduction very appealing. Since the original work of Bernal and Fowler on ice, the idea that the transport occurs through chains of hydrogen bonds has been well accepted. Such ''proton wires'' were invoked by Nagle and Morowitz for proton transport across membranes proteins and more recently across lipid bilayers. In this report, we assume the existence of such an hydrogen-bonded chain and discuss its consequences on the dynamics of the charge carriers. We show that this assumption leads naturally to the idea of soliton transport and we put a special emphasis on the role of the coupling between the protons and heavy ions motions. The model is presented. We show how the coupling affects strongly the dynamics of the charge carriers and we discuss the role it plays in the thermal generation of carriers. The work presented has been performed in 1986 and 87 with St. Pnevmatikos and N. Flyzanis and was then completed in collaboration with D. Hochstrasser and H. Buettner. Therefore the results presented in this part are not new but we think that they are appropriate in the context of this multidisciplinary workshop because they provide a rather complete example of the soliton picture for proton conduction. This paper discusses the thermal generation of the charge carriers when the coupling between the protons and heavy ions dynamics is taken into account. The results presented in this part are very recent and will deserve further analysis but they already show that the coupling can assist for the formation of the charge carriers

  11. Quantitative description of charge-carrier transport in a white organic light-emitting diode

    Science.gov (United States)

    Schober, M.; Anderson, M.; Thomschke, M.; Widmer, J.; Furno, M.; Scholz, R.; Lüssem, B.; Leo, K.

    2011-10-01

    We present a simulation model for the analysis of charge-carrier transport in organic thin-film devices, and apply it to a three-color white hybrid organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emission. We simulate a series of single-carrier devices, which reconstruct the OLED layer sequence step by step. Thereby, we determine the energy profiles for hole and electron transport, show how to discern bulk from interface limitation, and identify trap states.

  12. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  13. Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

    Science.gov (United States)

    Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

    2018-01-01

    We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

  14. Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

    International Nuclear Information System (INIS)

    Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung; Shim, Jong-In

    2014-01-01

    Two kinds of green InGaN light emitting diodes (LEDs) have been investigated in order to understand the different slopes in logarithmic light output power-current (L-I) curves. Through the analysis of the carrier rate equation and by considering the carrier density-dependent the injection efficiency into quantum wells, the slopes of the logarithmic L-I curves can be more rigorously understood. The low current level, two as the tunneling current is initially dominant. The high current level beyond the peak of the external quantum efficiency (EQE) diminishes below one as the carrier overflow becomes dominant. In addition, the normalized carrier injection efficiency can be obtained by analyzing the slopes of the logarithmic L-I curves. The carrier injection efficiency decreases after the EQE peak of the InGaN LEDs, determined from the analysis of the slopes of the logarithmic L-I curves

  15. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  16. Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

    Energy Technology Data Exchange (ETDEWEB)

    Arguirov, Tzanimir; Kittler, Martin [IHP - Innovations for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); IHP/BTU Joint Lab BTU Cottbus, Konrad-Wachsmann-Allee 1, 03013 Cottbus (Germany); Wenger, Christian; Lukosius, Mindaugas [IHP - Innovations for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Mchedlidze, Teimuraz [IHP/BTU Joint Lab BTU Cottbus, Konrad-Wachsmann-Allee 1, 03013 Cottbus (Germany); Reiche, Manfred [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

    2011-04-15

    We report on electro-luminescence from metal-insulator-semiconductor diodes (MISLED). MISLEDs prepared on silicon with HfO2 layers of different thicknesses were investigated and their properties compared with such prepared by using SiO2 insulator layer. The role of the insulator layer was studied in view of the efficiency of the band-to-band radiation from silicon. We show that the luminescence efficiency depends on the dielectric constant of the insulator as well as on its ability to conduct carriers by tunnelling. Efficiency enhancement of 3.3 times was detected when the SiO{sub 2} insulator was substituted by HfO{sub 2} in the MIS emitter. Optimal injection current exists, which leads to a maximal efficiency of the luminescence. The optimal current depends strongly on the thickness of the oxide. We relate the existence of an optimal current with the depth at which the injected minority carriers recombine radiatively. Thus the electric field in the semiconductor and the surface recombination are the factors determining the optimal injection (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. The thermoballistic transport model a novel approach to charge carrier transport in semiconductors

    CERN Document Server

    Lipperheide, Reinhard

    2014-01-01

    The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detai...

  18. Charge carrier transport and photogeneration in P3HT:PCBM photovoltaic blends.

    Science.gov (United States)

    Laquai, Frédéric; Andrienko, Denis; Mauer, Ralf; Blom, Paul W M

    2015-06-01

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano-fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10(-4) cm(2) V(-1) s(-1) after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea-sured in P3HT:PCBM photovoltaic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Charge Carrier Transport and Photogeneration in P3HT:PCBM Photovoltaic Blends

    KAUST Repository

    Laquai, Frederic

    2015-05-03

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano­fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10−4 cm2 V−1 s−1 after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea­sured in P3HT:PCBM photovoltaic devices.

  20. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  1. Towards high charge carrier mobilities by rational design of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  2. Transient Zitterbewegung of charge carriers in mono- and bilayer graphene, and carbon nanotubes

    International Nuclear Information System (INIS)

    Rusin, Tomasz M.; Zawadzki, Wlodek

    2007-01-01

    Observable effects due to trembling motion [Zitterbewegung (ZB)] of charge carriers in bilayer graphene, monolayer graphene, and carbon nanotubes are calculated. It is shown that, when the charge carriers are prepared in the form of Gaussian wave packets, the ZB has a transient character with the decay time of femtoseconds in graphene and picoseconds in nanotubes. Analytical results for bilayer graphene allow us to investigate phenomena which accompany the trembling motion. In particular, it is shown that the transient character of ZB in graphene is due to the fact that wave subpackets related to positive and negative electron energies move in opposite directions, so their overlap diminishes with time. This behavior is analogous to that of the wave packets representing relativistic electrons in a vacuum

  3. Interface inductive currents and carrier injection in hybrid perovskite single crystals

    Science.gov (United States)

    Kovalenko, Alexander; Pospisil, Jan; Krajcovic, Jozef; Weiter, Martin; Guerrero, Antonio; Garcia-Belmonte, Germà

    2017-10-01

    Interfaces between the absorbing perovskite and transporting layers are gaining attention as the key locus that governs solar cell operation and long term performance. The interplay of ionic and electronic processes, along with the asymmetrical architecture of any solar cell, makes the interpretation of electrical measurements always inconclusive. A strategy to progress in relating electric responses, operating mechanisms, and device architecture relies upon simplifying the probing structure. Macroscopic CH3NH3PbBr3 single crystals with symmetrical contacts are tested by means of long-time current transient and impedance spectroscopy. It is observed that interfaces govern carrier injection to (and extraction from) perovskite layers through an inductive (negative capacitance) mechanism with a response time in the range of ˜ 1 - 100 s under dark conditions and inert atmosphere. Current transient exhibits a slow recovering after the occurrence of an undershoot, signaling a complex carrier dynamics which involves changes in surface state occupancy.

  4. Time-dependent mobility and recombination of the photoinduced charge carriers in conjugated polymer/fullerene bulk heterojunction solar cells

    Science.gov (United States)

    Mozer, A. J.; Dennler, G.; Sariciftci, N. S.; Westerling, M.; Pivrikas, A.; Österbacka, R.; Juška, G.

    2005-07-01

    Time-dependent mobility and recombination in the blend of poly[2-methoxy-5-(3,7-dimethyloctyloxy)-phenylene vinylene] (MDMO-PPV) and 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)- C61 (PCBM) is studied simultaneously using the photoinduced charge carrier extraction by linearly increasing voltage technique. The charge carriers are photogenerated by a strongly absorbed, 3 ns laser flash, and extracted by the application of a reverse bias voltage pulse after an adjustable delay time (tdel) . It is found that the mobility of the extracted charge carriers decreases with increasing delay time, especially shortly after photoexcitation. The time-dependent mobility μ(t) is attributed to the energy relaxation of the charge carriers towards the tail states of the density of states distribution. A model based on a dispersive bimolecular recombination is formulated, which properly describes the concentration decay of the extracted charge carriers at all measured temperatures and concentrations. The calculated bimolecular recombination coefficient β(t) is also found to be time-dependent exhibiting a power law dependence as β(t)=β0t-(1-γ) with increasing slope (1-γ) with decreasing temperatures. The temperature dependence study reveals that both the mobility and recombination of the photogenerated charge carriers are thermally activated processes with activation energy in the range of 0.1 eV. Finally, the direct comparison of μ(t) and β(t) shows that the recombination of the long-lived charge carriers is controlled by diffusion.

  5. Grain Boundaries Act as Solid Walls for Charge Carrier Diffusion in Large Crystal MAPI Thin Films.

    Science.gov (United States)

    Ciesielski, Richard; Schäfer, Frank; Hartmann, Nicolai F; Giesbrecht, Nadja; Bein, Thomas; Docampo, Pablo; Hartschuh, Achim

    2018-03-07

    Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices.

  6. 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator

    International Nuclear Information System (INIS)

    Chen Hongtao; Ding Jianfeng; Yang Lin

    2012-01-01

    We demonstrate a 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator. Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit V π L of 0.036 V·mm. (semiconductor devices)

  7. Spectrophotometric determination of Tl carrier in 201Tl-TlCl injection

    International Nuclear Information System (INIS)

    Gong Quansheng; Jing Lie

    1997-01-01

    A simple and sensitive method for the spectrophotometric determination of carrier content (Thallium) in 201 Tl-TlCl injection is described. Thallium (I) is oxidised to Thallium (III) by aqueous bromine, then excess bromine is removed by adding sulfosalicylic acid. In buffer solution (NH 4 Cl-NH 4 OH) at pH 11.7 with the presence of emulsifier OP, thallium (III) and cadion form a complex having an absorption maximum at 469 nm with a molar absorptivity of 1.37 x 10 4 m 2 /mol. Beer's law is obeyed in the concentration range of 0-7 μg/5 mL. The effect of impurity elements in 201 Tl-TlCl injection is examined. It is an ideal method for the analysis of radioactive solution

  8. The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films.

    Science.gov (United States)

    Gudjonsdottir, Solrun; van der Stam, Ward; Kirkwood, Nicholas; Evers, Wiel H; Houtepen, Arjan J

    2018-05-16

    Control over the charge density is very important for implementation of colloidal semiconductor nanocrystals into various optoelectronic applications. A promising approach to dope nanocrystal assemblies is charge injection by electrochemistry, in which the charge compensating electrolyte ions can be regarded as external dopant ions. To gain insight into the doping mechanism and the role of the external dopant ions, we investigate charge injection in ZnO nanocrystal assemblies for a large series of charge compensating electrolyte ions with spectroelectrochemical and electrochemical transistor measurements. We show that charge injection is limited by the diffusion of cations in the nanocrystal films as their diffusion coefficient are found to be ∼7 orders of magnitude lower than those of electrons. We further show that the rate of charge injection depends strongly on the cation size and cation concentration. Strikingly, the onset of electron injection varies up to 0.4 V, depending on the size of the electrolyte cation. For the small ions Li + and Na + the onset is at significantly less negative potentials. For larger ions (K + , quaternary ammonium ions) the onset is always at the same, more negative potential, suggesting that intercalation may take place for Li + and Na + . Finally, we show that the nature of the charge compensating cation does not affect the source-drain electronic conductivity and mobility, indicating that shallow donor levels from intercalating ions fully hybridize with the quantum confined energy levels and that the reorganization energy due to intercalating ions does not strongly affect electron transport in these nanocrystal assemblies.

  9. Injection of an electron beam into a plasma and spacecraft charging

    International Nuclear Information System (INIS)

    Okuda, H.; Kan, J.R.

    1987-01-01

    Injection of a nonrelativistic electron beam into a fully ionized plasma from a spacecraft including the effect of charging has been studied using a one-dimensional particle simulation model. It is found that the spacecraft charging remains negligible and the beam can propagate into a plasma, if the beam density is much smaller than the ambient density. When the injection current is increased by increasing the beam density, significant spacecraft charging takes place and the reflection of beam electrons back to the spacecraft reduces the beam current significantly. On the other hand, if the injection current is increased by increasing the beam energy, spacecraft charging remains negligible and a beam current much larger than the thermal return current can be injected. It is shown that the electric field caused by the beam--plasma instability accelerates the ambient electrons toward the spacecraft thereby enhancing the return current

  10. Experimental optimization of a direct injection homogeneous charge compression ignition gasoline engine using split injections with fully automated microgenetic algorithms

    Energy Technology Data Exchange (ETDEWEB)

    Canakci, M. [Kocaeli Univ., Izmit (Turkey); Reitz, R.D. [Wisconsin Univ., Dept. of Mechanical Engineering, Madison, WI (United States)

    2003-03-01

    Homogeneous charge compression ignition (HCCI) is receiving attention as a new low-emission engine concept. Little is known about the optimal operating conditions for this engine operation mode. Combustion under homogeneous, low equivalence ratio conditions results in modest temperature combustion products, containing very low concentrations of NO{sub x} and particulate matter (PM) as well as providing high thermal efficiency. However, this combustion mode can produce higher HC and CO emissions than those of conventional engines. An electronically controlled Caterpillar single-cylinder oil test engine (SCOTE), originally designed for heavy-duty diesel applications, was converted to an HCCI direct injection (DI) gasoline engine. The engine features an electronically controlled low-pressure direct injection gasoline (DI-G) injector with a 60 deg spray angle that is capable of multiple injections. The use of double injection was explored for emission control and the engine was optimized using fully automated experiments and a microgenetic algorithm optimization code. The variables changed during the optimization include the intake air temperature, start of injection timing and the split injection parameters (per cent mass of fuel in each injection, dwell between the pulses). The engine performance and emissions were determined at 700 r/min with a constant fuel flowrate at 10 MPa fuel injection pressure. The results show that significant emissions reductions are possible with the use of optimal injection strategies. (Author)

  11. Excited state and charge-carrier dynamics in perovskite solar cell materials

    Science.gov (United States)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  12. Excited state and charge-carrier dynamics in perovskite solar cell materials

    International Nuclear Information System (INIS)

    Ponseca, Carlito S Jr; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

    2016-01-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research. (topical review)

  13. Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through V2O5 interlayer.

    Science.gov (United States)

    Baeg, Kang-Jun; Bae, Gwang-Tae; Noh, Yong-Young

    2013-06-26

    Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable Rc to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.

  14. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    Science.gov (United States)

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

  15. Controlling charge injection in organic electronic devices using self-assembled monolayers

    Science.gov (United States)

    Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1997-12-01

    We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current-voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer.

  16. Phase separation in strongly correlated electron systems with two types of charge carriers

    International Nuclear Information System (INIS)

    Kugel, K.I.; Rakhmanov, A.L.; Sboychakov, A.O.

    2007-01-01

    Full text: A competition between the localization of the charge carriers due to Jahn-Teller distortions and the energy gain due to their delocalization in doped manganite and related magnetic oxides is analyzed based on a Kondo-lattice type model. The resulting effective Hamiltonian is, in fact, a generalization of the Falicov-Kimball model. We find that the number of itinerant charge carriers can be significantly lower than that implied by the doping level x. The phase diagram of the model in the T plane is constructed. The system exhibits magnetic ordered (antiferromagnetic, ferromagnetic, or canted) states as well the paramagnetic states with zero and nonzero density of the itinerant electrons. It is shown that a phase-separation is favorable in energy for a wide doping range. The characteristic size of inhomogeneities in a phase-separated state is of the order of several lattice constants. We also analyzed the two-band Hubbard model in the limit of strong on-site Coulomb repulsion. It was shown that such a system has a tendency to phase separation into the regions with different charge densities even in the absence of magnetic or any other ordering, if the ratio of the bandwidths is large enough. The work was supported by the European project CoMePhS and by the Russian Foundation for Basic Research, project no. 05-02-17600. (authors)

  17. Electrical control of charged carriers and excitons in atomically thin materials

    Science.gov (United States)

    Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

    2018-02-01

    Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

  18. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    Science.gov (United States)

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  19. Observation of disorder effects on charged carrier mobility in triphenylene-based discotic materials

    International Nuclear Information System (INIS)

    Zhang Chunxiu; He, Zhiqun; Mao Huaxiang; Wang Junjie; Wang Dongdong; Wang Yongsheng; Li Zhongxiao; Pu Jialing

    2007-01-01

    A discotic 2,6,10-trihydroxy-3,7,11-tripentyloxytriphenylene material and a triphenylene-based hyperbranched macromolecule were synthesized, in which the latter was prepared from AB m molecules in a one-pot reaction. Adipic chloride and butyryl chloride were chosen as terminal groups to the 2,6,10-trihydroxy-3,7,11-tripentyloxytriphenylene. Mesophase and their structural orders were determined using a polarized optical microscope and a differential scanning calorimeter. Carrier mobilities of the pure and composite materials were measured via a time-of-flight method. A change in carrier mobility on the morphology of the materials was further discussed. It was found that degree of crystallization was the key for a discotic triphenylene material to possess charge-transporting properties, no matter it is ordered or disordered

  20. Positively Charged Nanostructured Lipid Carriers and Their Effect on the Dissolution of Poorly Soluble Drugs

    Directory of Open Access Journals (Sweden)

    Kyeong-Ok Choi

    2016-05-01

    Full Text Available The objective of this study is to develop suitable formulations to improve the dissolution rate of poorly water soluble drugs. We selected lipid-based formulation as a drug carrier and modified the surface using positively charged chitosan derivative (HTCC to increase its water solubility and bioavailability. Chitosan and HTCC-coated lipid particles had higher zeta-potential values than uncoated one over the whole pH ranges and improved encapsulation efficiency. In vitro drug release showed that all NLC formulations showed higher in vitro release efficiency than drug particle at pH 7.4. Furthermore, NLC formulation prepared with chitosan or HTCC represented good sustained release property. The results indicate that chitosan and HTCC can be excellent formulating excipients of lipid-based delivery carrier for improving poorly water soluble drug delivery.

  1. Positively Charged Nanostructured Lipid Carriers and Their Effect on the Dissolution of Poorly Soluble Drugs.

    Science.gov (United States)

    Choi, Kyeong-Ok; Choe, Jaehyeog; Suh, Seokjin; Ko, Sanghoon

    2016-05-20

    The objective of this study is to develop suitable formulations to improve the dissolution rate of poorly water soluble drugs. We selected lipid-based formulation as a drug carrier and modified the surface using positively charged chitosan derivative (HTCC) to increase its water solubility and bioavailability. Chitosan and HTCC-coated lipid particles had higher zeta-potential values than uncoated one over the whole pH ranges and improved encapsulation efficiency. In vitro drug release showed that all NLC formulations showed higher in vitro release efficiency than drug particle at pH 7.4. Furthermore, NLC formulation prepared with chitosan or HTCC represented good sustained release property. The results indicate that chitosan and HTCC can be excellent formulating excipients of lipid-based delivery carrier for improving poorly water soluble drug delivery.

  2. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    Science.gov (United States)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  3. Bisphosphonate-adsorbed ceramic nanoparticles increase bone formation in an injectable carrier for bone tissue engineering

    Directory of Open Access Journals (Sweden)

    Tegan L Cheng

    2015-10-01

    Full Text Available Sucrose acetate isobutyrate (SAIB is a sugar-based carrier. We have previously applied SAIB as a minimally invasive system for the co-delivery of recombinant human bone morphogenetic protein-2 (rhBMP-2 and found synergy when co-delivering zoledronic acid (ZA and hydroxyapatite (HA nanoparticles. Alternative bioceramics were investigated in a murine SAIB/rhBMP-2 injection model. Neither beta-tricalcium phosphate (TCP nor Bioglass (BG 45S5 had a significant effect on bone volume (BV alone or in combination with the ZA. 14C-labelled ZA binding assays showed particle size and ceramic composition affected binding with nano-HA > micro-HA > TCP > BG. Micro-HA and nano-HA increased BV in a rat model of rhBMP-2/SAIB injection (+278% and +337%, and BV was further increased with ZA–adsorbed micro-HA and nano-HA (+530% and +889%. These data support the use of ZA–adsorbed nanoparticle-sized HA as an optimal additive for the SAIB/rhBMP-2 injectable system for bone tissue engineering.

  4. Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

    Science.gov (United States)

    Heiber, Michael C.; Kister, Klaus; Baumann, Andreas; Dyakonov, Vladimir; Deibel, Carsten; Nguyen, Thuc-Quyen

    2017-11-01

    The impact of the tortuosity of the charge-transport pathways through a bulk heterojunction film on the charge-carrier mobility is theoretically investigated using model morphologies and kinetic Monte Carlo simulations. The tortuosity descriptor provides a quantitative metric to characterize the quality of the charge-transport pathways, and model morphologies with controlled domain size and tortuosity are created using an anisotropic domain growth procedure. The tortuosity is found to be dependent on the anisotropy of the domain structure and is highly tunable. Time-of-flight charge-transport simulations on morphologies with a range of tortuosity values reveal that tortuosity can significantly reduce the magnitude of the mobility and the electric-field dependence relative to a neat material. These reductions are found to be further controlled by the energetic disorder and temperature. Most significantly, the sensitivity of the electric-field dependence to the tortuosity can explain the different experimental relationships previously reported, and exploiting this sensitivity could lead to simpler methods for characterizing and optimizing charge transport in organic solar cells.

  5. Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films

    International Nuclear Information System (INIS)

    Zhou Yan-Wen; Wu Fa-Yu; Zheng Chun-Yan

    2011-01-01

    We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO 2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Modelling of charge carrier transport in conjugated polymers doped by polar additives

    Czech Academy of Sciences Publication Activity Database

    Toman, Petr; Nešpůrek, Stanislav; Bartkowiak, W.

    2009-01-01

    Roč. 27, č. 3 (2009), s. 797-812 ISSN 0137-1339. [International Conference on Electrical and Related Properties of Organic Solids /11./. Piechowice, 13.07.2008-17.07.2008] R&D Projects: GA ČR GA203/06/0285; GA AV ČR KAN400720701; GA MŠk MEB050815 Institutional research plan: CEZ:AV0Z40500505 Keywords : conjugated polymers * charge carrier transport * molecular electronics Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.384, year: 2009

  7. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    Science.gov (United States)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  8. Ballistic charge carrier transmission through graphene multi-barrier structures in uniform magnetic field

    International Nuclear Information System (INIS)

    Zubarev, A; Dragoman, D

    2014-01-01

    We investigate charge carrier transport in graphene multi-barrier structures placed in a uniform magnetic field. The transmission coefficient is found analytically by generalizing the transfer matrix method for the case of graphene regions subjected to a uniform magnetic field. The transmission coefficient through the structure can be modulated by varying the gate voltages, the magnetic field and/or the width of the gated regions. Such a configuration could be used in multiple-valued logic circuits, since it has several output states with discrete and easily selectable transmission/current values. (paper)

  9. Recombination of charge carriers in the GaAs-based p-i-n diode

    International Nuclear Information System (INIS)

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-01-01

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  10. Designing thiophene-based azomethine oligomers with tailored properties: Self-assembly and charge carrier mobility

    DEFF Research Database (Denmark)

    Kiriy, N.; Bocharova, V.; Kiriy, A.

    2004-01-01

    This paper describes synthesis and characterization of two thiophene-based azomethines designed to optimize solubility, self-assembly, and charge carrier mobility. We found that incorporation of azomethine and amide moieties in the alpha,omega-position, and hexyl chains in the beta-position of th...... with the mobilities of the best organic semiconductors. All these significant differences in properties of related compounds can be attributed to the hydrogen bonding between QT-amide molecules responsible for the observed self-assembly....

  11. Modelling of charge carrier mobility for transport between elastic polyacetylene-like polymer nanorods

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Sun, S. J.; Toman, Petr; Král, Karel

    2017-01-01

    Roč. 61, č. 2 (2017), s. 127-135 ISSN 0862-5468 R&D Projects: GA MŠk(CZ) LD14011; GA ČR(CZ) GA15-05095S Grant - others:European Commission(XE) COST Action MP1202 HINT; AV ČR(CZ) KONNECT-007 Program:Bilaterální spolupráce Institutional support: RVO:61389013 ; RVO:68378271 Keywords : charge carrier mobility * polymers * electron-phonon coupling Subject RIV: CF - Physical ; Theoretical Chemistry; CF - Physical ; Theoretical Chemistry (FZU-D) OBOR OECD: Physical chemistry; Physical chemistry (FZU-D) Impact factor: 0.439, year: 2016

  12. Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cells

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.

    1997-01-01

    The observation of minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP is reported. 1-MeV electron irradiation results demonstrate superior radiation-resistance of InGa 0.5 P 0.5 solar cells compared to GaAs-on-Ge cells. Moreover, minority-carrier injection under forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP solar cell properties. These results suggest that the radiation-resistance of InGaP-based devices such as InGaP/GaAs(/Ge) multijunction solar cells and InGaP(As) light-emitting devices is further improved under minority-carrier injection condition. copyright 1997 American Institute of Physics

  13. Dynamics of charge carrier trapping in NO 2 sensors based on ZnO field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.-M.; Vlietstra, N.; Smits, E.C.P.; Spijkman, M.-J.; Gomes, H.L.; Klootwijk, J.H.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a

  14. H- charge exchange injection for the NSNS accumulator

    International Nuclear Information System (INIS)

    Blumberg, L.N.; Lee, Y.Y.

    1997-01-01

    A scheme for injection into the FODO cell of the National Spallation Neutron Source (NSNS) Accumulator ring is discussed. A 400 μg/cm 2 carbon foil is chosen for a high stripping efficiency and for heating of the foil consideration. Additional schemes to reduce losses due to nuclear and Coulomb scattering at the foil are discussed. Subsequent loss from magnetic field ionization of the residual H 0 component is estimated to be small comparable to nuclear loss. A method for sweeping and collecting the stripped electrons from the foil is presented

  15. Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

    Science.gov (United States)

    Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

    2017-08-23

    We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

  16. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-05-22

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  17. Charge Carrier Generation Followed by Triplet State Formation, Annihilation, and Carrier Recreation in PBDTTT-C:PC 60 BM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.; Howard, Ian A.; Laquai, Fré dé ric

    2015-01-01

    Triplet state formation after photoexcitation of low-bandgap polymer:fullerene blends has recently been demonstrated, however, the precise mechanism and its impact on solar cell performance is still under debate. Here, we study exciton dissociation, charge carrier generation and triplet state formation in low-bandgap polymer PBDTTT-C:PC60BM bulk heterojunction photovoltaic blends by a combination of fs-µs broadband Vis-NIR transient absorption (TA) pump-probe spectroscopy and multivariate curve resolution (MCR) data analysis. We found sub-ps exciton dissociation and charge generation followed by sub-ns triplet state creation. The carrier dynamics and triplet state dynamics exhibited a very pronounced intensity dependence indicating non-geminate recombination of free carriers is the origin of triplet formation in these blends. Triplets were found to be the dominant state present on the nanosecond timescale. Surprisingly, the carrier population increased again on the ns-µs timescale. We attribute this to triplet-triplet annihilation and the formation of higher energy excited states that subsequently underwent charge transfer. This unique dip and recovery of the charge population is a clear indication that triplets are formed by non-geminate recombination, as such a kinetic is incompatible with a monomolecular triplet state formation process.

  18. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    International Nuclear Information System (INIS)

    Song, Linze; Shi, Qiang

    2015-01-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated

  19. Investigating Recombination and Charge Carrier Dynamics in a One-Dimensional Nanopillared Perovskite Absorber.

    Science.gov (United States)

    Kwon, Hyeok-Chan; Yang, Wooseok; Lee, Daehee; Ahn, Jihoon; Lee, Eunsong; Ma, Sunihl; Kim, Kyungmi; Yun, Seong-Cheol; Moon, Jooho

    2018-05-22

    Organometal halide perovskite materials have become an exciting research topic as manifested by intense development of thin film solar cells. Although high-performance solar-cell-based planar and mesoscopic configurations have been reported, one-dimensional (1-D) nanostructured perovskite solar cells are rarely investigated despite their expected promising optoelectrical properties, such as enhanced charge transport/extraction. Herein, we have analyzed the 1-D nanostructure effects of organometal halide perovskite (CH 3 NH 3 PbI 3- x Cl x ) on recombination and charge carrier dynamics by utilizing a nanoporous anodized alumina oxide scaffold to fabricate a vertically aligned 1-D nanopillared array with controllable diameters. It was observed that the 1-D perovskite exhibits faster charge transport/extraction characteristics, lower defect density, and lower bulk resistance than the planar counterpart. As the aspect ratio increases in the 1-D structures, in addition, the charge transport/extraction rate is enhanced and the resistance further decreases. However, when the aspect ratio reaches 6.67 (diameter ∼30 nm), the recombination rate is aggravated due to high interface-to-volume ratio-induced defect generation. To obtain the full benefits of 1-D perovskite nanostructuring, our study provides a design rule to choose the appropriate aspect ratio of 1-D perovskite structures for improved photovoltaic and other optoelectrical applications.

  20. A Method to Overcome Space Charge at Injection

    International Nuclear Information System (INIS)

    Ya. Derbenev

    2005-01-01

    The transverse space charge forces in a high current, low energy beam can be reduced by mean of a large increase of the beam's transverse sizes while maintaining the beam area in the 4D phase space. This can be achieved by transforming the beam area in phase space of each of two normal 2D transverse (either plane or circular) modes from a spot shape into a narrow ring of a large amplitude, but homogeneous in phase. Such a transformation results from the beam evolution in the island of a dipole resonance when the amplitude width of the island shrinks adiabatically. After stacking (by using stripping foils or cooling) the beam in such a state and accelerating to energies sufficiently high that the space charge becomes insignificant, the beam then can be returned back to a normal spot shape by applying the reverse transformation. An arrangement that can provide such beam gymnastics along a transport line after a linac and before a booster and/or in a ring with circulating beam will be described and numerical estimates will be presented. Other potential applications of the method will be briefly discussed

  1. Fast electron beam charge injection and switching in dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Fitting, Hans-Joachim; Schreiber, Erik [Institute of Physics, University of Rostock, Universitaetsplatz 3, 18051 Rostock (Germany); Touzin, Matthieu [Laboratoire de Structure et Proprietes de l' Etat Solide, UMR CNRS 8008, Universite de Lille 1, 59655 Villeneuve d' Ascq (France)

    2011-04-15

    Basic investigations of secondary electrons (SE) relaxation and attenuation are made by means of Monte Carlo simulations using ballistic electron scattering and interactions with optical and acoustic phonons as well as impact ionization of valence band electrons. Then the electron beam induced selfconsistent charge transport and secondary electron emission in insulators are described by means of an electron-hole flight-drift model (FDM). Ballistic secondary electrons and holes, their attenuation and drift, as well as their recombination, trapping, and field- and temperature-dependent Poole-Frenkel detrapping are included. Whereas the initial switching-on of the secondary electron emission proceeds over milli-seconds due to long-lasting selfconsistent charging, the switching-off process occurs much faster, even over femto-seconds. Thus a rapid electron beam switching becomes possible with formation of ultra-short electron beam pulses offering an application in stroboscopic electron microscopy and spectroscopy. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films

    Science.gov (United States)

    2018-01-01

    Control over the charge density is very important for implementation of colloidal semiconductor nanocrystals into various optoelectronic applications. A promising approach to dope nanocrystal assemblies is charge injection by electrochemistry, in which the charge compensating electrolyte ions can be regarded as external dopant ions. To gain insight into the doping mechanism and the role of the external dopant ions, we investigate charge injection in ZnO nanocrystal assemblies for a large series of charge compensating electrolyte ions with spectroelectrochemical and electrochemical transistor measurements. We show that charge injection is limited by the diffusion of cations in the nanocrystal films as their diffusion coefficient are found to be ∼7 orders of magnitude lower than those of electrons. We further show that the rate of charge injection depends strongly on the cation size and cation concentration. Strikingly, the onset of electron injection varies up to 0.4 V, depending on the size of the electrolyte cation. For the small ions Li+ and Na+ the onset is at significantly less negative potentials. For larger ions (K+, quaternary ammonium ions) the onset is always at the same, more negative potential, suggesting that intercalation may take place for Li+ and Na+. Finally, we show that the nature of the charge compensating cation does not affect the source-drain electronic conductivity and mobility, indicating that shallow donor levels from intercalating ions fully hybridize with the quantum confined energy levels and that the reorganization energy due to intercalating ions does not strongly affect electron transport in these nanocrystal assemblies. PMID:29718666

  3. Triphenylene columnar liquid crystals: spectroscopic study of triplets states and charge carriers

    International Nuclear Information System (INIS)

    Bondkowski, Jens

    2000-01-01

    This research thesis reports the study of three oxygenated derivatives of triphenylene (two monomers, a symmetric one and an asymmetric one, and a tetramer) by using different experimental techniques: absorption spectroscopy and fluorescence spectroscopy in stationary regime, and time-resolved fluorescence spectroscopy (also said single photon counting). Moreover, the author adapted an existing experiment of transient absorption spectroscopy time-resolved at the microsecond level to obtain spectra of thin layers under electric field. A cyclic voltammetry experiment and a spectro-electrochemistry experiment have also been performed. The report first presents the studied materials, the characterisation of singlet states, and the study of the effect molecular symmetry decreasing have on molecular transitions. Then, the author reports the study of cationic species of the triphenylene derivatives. The next chapters address the characterisation of derivative triplet states, and the study of energy transfer within the meso phase of one of these derivatives. The last chapters address charge carriers of columnar liquid crystals, and the molecular nature of these charge carriers

  4. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.; Reid, Obadiah G.; Barnes, George; Heeney, Martin; Stingelin, Natalie; Rumbles, Garry

    2014-01-01

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  5. Control of polythiophene film microstructure and charge carrier dynamics through crystallization temperature

    KAUST Repository

    Marsh, Hilary S.

    2014-03-22

    The microstructure of neat conjugated polymers is crucial in determining the ultimate morphology and photovoltaic performance of polymer/fullerene blends, yet until recently, little work has focused on controlling the former. Here, we demonstrate that both the long-range order along the (100)-direction and the lamellar crystal thickness along the (001)-direction in neat poly(3-hexylthiophene) (P3HT) and poly[(3,3″-didecyl[2,2′:5′, 2″-terthiophene]-5,5″-diyl)] (PTTT-10) thin films can be manipulated by varying crystallization temperature. Changes in crystalline domain size impact the yield and dynamics of photogenerated charge carriers. Time-resolved microwave conductivity measurements show that neat polymer films composed of larger crystalline domains have longer photoconductance lifetimes and charge carrier yield decreases with increasing crystallite size for P3HT. Our results suggest that the classical polymer science description of temperature-dependent crystallization of polymers from solution can be used to understand thin-film formation in neat conjugated polymers, and hence, should be considered when discussing the structural evolution of organic bulk heterojunctions. © 2014 Wiley Periodicals, Inc.

  6. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    Science.gov (United States)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  7. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

    2015-01-01

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  8. Injection and propagation of a nonrelativistic electron beam and spacecraft charging

    International Nuclear Information System (INIS)

    Okuda, H.; Berchem, J.

    1987-05-01

    Two-dimensional numerical simulations have been carried out in order to study the injection and propagation of a nonrelativistic electron beam from a spacecraft into a fully ionized plasma in a magnetic field. Contrary to the earlier results in one-dimension, a high density electron beam whose density is comparable to the ambient density can propagate into a plasma. A strong radial electric field resulting from the net charges in the beam causes the beam electrons to spread radially reducing the beam density. When the injection current exceeds the return current, significant charging of the spacecraft is observed along with the reflection of the injected electrons back to the spacecraft. Recent data on the electron beam injection from the Spacelab 1 (SEPAC) are discussed

  9. Effect of trap states and microstructure on charge carrier conduction mechanism through semicrystalline poly(vinyl alcohol) granular film

    Science.gov (United States)

    Das, A. K.; Bhowmik, R. N.; Meikap, A. K.

    2018-05-01

    We report a comprehensive study on hysteresis behaviour of current-voltage characteristic and impedance spectroscopy of granular semicrystalline poly(vinyl alcohol) (PVA) film. The charge carrier conduction mechanism and charge traps of granular PVA film by measuring and analyzing the temperature dependent current-voltage characteristic indicate a bi-stable electronic state in the film. A sharp transformation of charge carrier conduction mechanism from Poole-Frenkel emission to space charge limited current mechanism has been observed. An anomalous oscillatory behaviour of current has been observed due to electric pulse effect on the molecular chain of the polymer. Effect of microstructure on charge transport mechanism has been investigated from impedance spectroscopy analysis. An equivalent circuit model has been proposed to explain the result.

  10. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  11. Charge Injection and Transport in Metal/Polymer Chains/Metal Sandwich Structure

    International Nuclear Information System (INIS)

    Hai-Hong, Li; Dong-Mei, Li; Yuan, Li; Kun, Gao; De-Sheng, Liu; Shi-Jie, Xie

    2008-01-01

    Using the tight-binding Su–Schrieffer–Heeger model and a nonadiabatic dynamic evolution method, we study the dynamic processes of the charge injection and transport in a metal/two coupled conjugated polymer chains/metal structure. It is found that the charge interchain transport is determined by the strength of the electric field and the magnitude of the voltage bias applied on the metal electrode. The stronger electric field and the larger voltage bias are both in favour of the charge interchain transport. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

    Science.gov (United States)

    Mäckel, Helmut; MacKenzie, Roderick C. I.

    2018-03-01

    Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

  13. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Winata, Toto

    2016-01-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  14. Charge carriers at organic heterojunction interface: Exciplex emission or electroplex emission?

    Science.gov (United States)

    Yang, Shengyi; Zhang, Xiulong; Hou, Yanbing; Deng, Zhenbo; Xu, Xurong

    2007-05-01

    We report the electroluminescence (EL) of organic heterojunction devices based on N ,N'-diphenyl-N ,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4',-diamine (TPD) and 2-(4'-biphenyl)-5-(4″-tert-butylphenyl)-1,3,4-oxadiazole (PBD). Besides monomolecular emissions from TPD, there are two additional EL peaks at around 460 and 480nm from the bilayer device indium tin oxide (ITO)/TPD(100nm )/PBD(45nm)/Al. Our experimental data confirmed that the EL emission maximized at around 460nm is from electroplex as the result of charge carriers cross recombination at the TPD/PBD interface and the EL emission maximized at around 480nm originates from (TPD*PBD)-type exciplex.

  15. MODELLING OF CHARGE CARRIER MOBILITY FOR TRANSPORT BETWEEN ELASTIC POLYACETYLENE-LIKE POLYMER NANORODS

    Directory of Open Access Journals (Sweden)

    M. Mensik

    2017-03-01

    Full Text Available A quantum model solving the charge carrier mobility between polyacetylene-like polymer nanorods is presented. The model assumes: a Quantum mechanical calculation of hole on-chain delocalization involving electron-phonon coupling leading to the Peierls instability, b Hybridization coupling between the polymer backbone and side-groups (or environmental states, which act as hole traps, and c Semiclassical description of the inter-chain hole transfer in an applied voltage based on Marcus theory. We have found that mobility resonantly depends on the hybridization coupling between polymer and linked groups. We observed also non-trivial mobility dependences on the difference of energies of the highest occupied molecular orbitals localized on the polymer backbone and side-groups, respectively, and hole concentration. Those findings are important for optimization of hybrid opto-electronic devices.

  16. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components

    International Nuclear Information System (INIS)

    Grosse, Veit

    2011-01-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively σ(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10 7 ..10 8 V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  17. Origin of long lifetime of band-edge charge carriers in organic-inorganic lead iodide perovskites.

    Science.gov (United States)

    Chen, Tianran; Chen, Wei-Liang; Foley, Benjamin J; Lee, Jooseop; Ruff, Jacob P C; Ko, J Y Peter; Brown, Craig M; Harriger, Leland W; Zhang, Depei; Park, Changwon; Yoon, Mina; Chang, Yu-Ming; Choi, Joshua J; Lee, Seung-Hun

    2017-07-18

    Long carrier lifetime is what makes hybrid organic-inorganic perovskites high-performance photovoltaic materials. Several microscopic mechanisms behind the unusually long carrier lifetime have been proposed, such as formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling. Here, we show that the screening of band-edge charge carriers by rotation of organic cation molecules can be a major contribution to the prolonged carrier lifetime. Our results reveal that the band-edge carrier lifetime increases when the system enters from a phase with lower rotational entropy to another phase with higher entropy. These results imply that the recombination of the photoexcited electrons and holes is suppressed by the screening, leading to the formation of polarons and thereby extending the lifetime. Thus, searching for organic-inorganic perovskites with high rotational entropy over a wide range of temperature may be a key to achieve superior solar cell performance.

  18. To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

    KAUST Repository

    Parida, Manas R.

    2015-04-28

    Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

  19. Improving Charge Injection in Organic Electronic Devices Using Self-Assembled Monolayers

    Science.gov (United States)

    Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1997-03-01

    Organic electronic devices consist of one or more insulating organic layers contacted by metallic conductors. The Schottky energy barrier between the metal and the organic material is determined by the work function of the metal contact as described in the ideal Schottky model. The magnitude of the metal/organic Schottky energy barrier controls charge injection from the metal into the organic layer. Previously, polar alkane-thiol based self-assembled monolayers (SAMs) were used to change the Schottky energy barrier between the metal and an organic film by more than 1 eV. In these SAMs, the large energy gap of the alkane molecules blocks charge injection into the organic layer despite the decrease of the Schottky energy barrier. Here, we demonstrate improved charge injection into the organic material by using conjugated self-assembled monolayers. The conjugated SAMs have modest energy gaps which allow improved charge injection into the organic layer. We present measurements of current-voltage characteristics and metal/organic Schottky energy barriers for device structures both with and without conjugated SAMs.

  20. Optimization of operating conditions in the early direct injection premixed charge compression ignition regime

    NARCIS (Netherlands)

    Boot, M.D.; Luijten, C.C.M.; Rijk, E.P.; Albrecht, B.A.; Baert, R.S.G.

    2009-01-01

    Early Direct Injection Premixed Charge Compression Ignition (EDI PCCI) is a widely researched combustion concept, which promises soot and CO2 emission levels of a spark-ignition (SI) and compression-ignition (CI) engine, respectively. Application of this concept to a conventional CI engine using a

  1. Controlling charge injection in organic electronic devices using self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

    1997-12-01

    We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current{endash}voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer. {copyright} {ital 1997 American Institute of Physics.}

  2. Extraction method of interfacial injected charges for SiC power MOSFETs

    Science.gov (United States)

    Wei, Jiaxing; Liu, Siyang; Li, Sheng; Song, Haiyang; Chen, Xin; Li, Ting; Fang, Jiong; Sun, Weifeng

    2018-01-01

    An improved novel extraction method which can characterize the injected charges along the gate oxide interface for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. According to the different interface situations of the channel region and the junction FET (JFET) region, the gate capacitance versus gate voltage (Cg-Vg) curve of the device can be divided into three relatively independent parts, through which the locations and the types of the charges injected in to the oxide above the interface can be distinguished. Moreover, the densities of these charges can also be calculated by the amplitudes of the shifts in the Cg-Vg curve. The correctness of this method is proved by TCAD simulations. Moreover, experiments on devices stressed by unclamped-inductive-switching (UIS) stress and negative bias temperature stress (NBTS) are performed to verify the validity of this method.

  3. Charge separation and carrier dynamics in donor-acceptor heterojunction photovoltaic systems.

    Science.gov (United States)

    Teuscher, Joël; Brauer, Jan C; Stepanov, Andrey; Solano, Alicia; Boziki, Ariadni; Chergui, Majed; Wolf, Jean-Pierre; Rothlisberger, Ursula; Banerji, Natalie; Moser, Jacques-E

    2017-11-01

    Electron transfer and subsequent charge separation across donor-acceptor heterojunctions remain the most important areas of study in the field of third-generation photovoltaics. In this context, it is particularly important to unravel the dynamics of individual ultrafast processes (such as photoinduced electron transfer, carrier trapping and association, and energy transfer and relaxation), which prevail in materials and at their interfaces. In the frame of the National Center of Competence in Research "Molecular Ultrafast Science and Technology," a research instrument of the Swiss National Science Foundation, several groups active in the field of ultrafast science in Switzerland have applied a number of complementary experimental techniques and computational simulation tools to scrutinize these critical photophysical phenomena. Structural, electronic, and transport properties of the materials and the detailed mechanisms of photoinduced charge separation in dye-sensitized solar cells, conjugated polymer- and small molecule-based organic photovoltaics, and high-efficiency lead halide perovskite solar energy converters have been scrutinized. Results yielded more than thirty research articles, an overview of which is provided here.

  4. Charge separation and carrier dynamics in donor-acceptor heterojunction photovoltaic systems

    Directory of Open Access Journals (Sweden)

    Joël Teuscher

    2017-11-01

    Full Text Available Electron transfer and subsequent charge separation across donor-acceptor heterojunctions remain the most important areas of study in the field of third-generation photovoltaics. In this context, it is particularly important to unravel the dynamics of individual ultrafast processes (such as photoinduced electron transfer, carrier trapping and association, and energy transfer and relaxation, which prevail in materials and at their interfaces. In the frame of the National Center of Competence in Research “Molecular Ultrafast Science and Technology,” a research instrument of the Swiss National Science Foundation, several groups active in the field of ultrafast science in Switzerland have applied a number of complementary experimental techniques and computational simulation tools to scrutinize these critical photophysical phenomena. Structural, electronic, and transport properties of the materials and the detailed mechanisms of photoinduced charge separation in dye-sensitized solar cells, conjugated polymer- and small molecule-based organic photovoltaics, and high-efficiency lead halide perovskite solar energy converters have been scrutinized. Results yielded more than thirty research articles, an overview of which is provided here.

  5. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    KAUST Repository

    Shi, Dong

    2016-04-15

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.

  6. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    International Nuclear Information System (INIS)

    Rana, Aniket; Lochan, Abhiram; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.; Gupta, Neeraj; Sharma, G. D.

    2016-01-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  7. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    Science.gov (United States)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  8. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  9. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.; McGehee, Michael D.

    2013-01-01

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Photogeneration and decay of charge carriers in hybrid bulk heterojunctions of ZnO nanoparticles and conjugated polymers

    NARCIS (Netherlands)

    Quist, P.A.C.; Beek, W.J.E.; Wienk, M.M.; Janssen, R.A.J.; Savenije, T.J.; Siebbeles, L.D.A.

    2006-01-01

    The photogeneration and decay of charge carriers in blend films of ZnO nanoparticles (diam. 5 nm) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) or poly(3-hexylthiophene) (P3HT) were studied by means of microwave-photoconductance measurements. Excitation of the

  12. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

  13. Properties of Laser-Produced Highly Charged Heavy Ions for Direct Injection Scheme

    CERN Document Server

    Sakakibara, Kazuhiko; Hayashizaki, Noriyosu; Ito, Taku; Kashiwagi, Hirotsugu; Okamura, Masahiro

    2005-01-01

    To accelerate highly charged intense ion beam, we have developed the Direct Plasma Injection Scheme (DPIS) with laser ion source. In this scheme an ion beam from a laser ion source is injected directly to a RFQ linac without a low energy beam transport (LEBT) and the beam loss in the LEBT can be avoided. We achieved high current acceleration of carbon ions (60mA) by DPIS with the high current optimized RFQ. As the next setp we will use heavier elements like Ag, Pb, Al and Cu as target in LIS (using CO2, Nd-YAG or other laser) for DPIS and will examine properties of laser-produced plasma (the relationship of between charge state and laser power density, the current dependence of the distance from the target, etc).

  14. Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Martin, E-mail: martin.weis@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219 (Slovakia); Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@ome.pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-04-21

    Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

  15. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Davids, P.S.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas75083 (United States)

    1998-04-01

    We present device model calculations of the current{endash}voltage (I{endash}V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I{endash}V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I{endash}V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. {copyright} {ital 1998 American Institute of Physics.}

  16. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Science.gov (United States)

    Campbell, I. H.; Davids, P. S.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1998-04-01

    We present device model calculations of the current-voltage (I-V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I-V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I-V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited.

  17. The effects of free volumes on charge carrier transport in polysilanes probed by positron annihilation

    International Nuclear Information System (INIS)

    Seki, Shu; Terashima, Y.; Kunimi, Y.; Kawamori, T.; Tashiro, M.; Honda, Y.; Tagawa, S.

    2003-01-01

    Free volume characteristics were investigated by positron annihilation technique in poly(n-alkylphenylsilane)s with a variety length of n-alkyl chains from methyl (C1) to n-dodecyl (C12). The average radius of free volume: R changes in two steps. An increase in R is observed with an elongation of n-alkyl side-groups from C1 to n-pentyl (C5), followed by an abrupt decrease in R between C5 and n-hexyl (C6), and a gradual increase by further elongation from C6 to C12. The sudden decrease in R at C5 and C6 gives a good interpretation to the reduction of inter-site hopping distances and their fluctuation for the charge carrier (hole) transport estimated by time-of-flight measurements. The values of free volume fraction in the polymers mainly reflect the density of the polymers; however, differences in the microscopic inter-molecular structure are also observed for poly(n-hexylphenylsilane) in the present study

  18. Field effect measurements on charge carrier mobilities in various polymer-fullerene blend compositions

    International Nuclear Information System (INIS)

    Hauff, Elizabeth von; Parisi, Juergen; Dyakonov, Vladimir

    2006-01-01

    In this study we investigated materials typically used in polymer photovoltaics. Field effect measurements were performed in order to determine the hole mobilities in the conjugated polymer poly(3-hexylthiophene) (P3HT) and the electron mobilities in the methanofullerene[6,6]-phenyl C 61 -butyric acid methyl ester (PCBM), and, particularly, in the polymer-fullerene composite blends. Regarding the pure films, electron mobilities in PCBM were found to be in the 10 -2 cm 2 /Vs range, and hole mobilities in P3HT were found to be in the 10 -3 cm2/Vs range. In the PCBM:P3HT blends, it was found that varying the PCBM content in PCBM:P3HT blends led to a steep increase in electron mobility with increasing PCBM content, while the hole mobility was found to slightly decrease with the increasing PCBM concentration. In 2:1 PCBM:P3HT tempered blends, the charge carrier mobilities were found to be roughly balanced, at 10 -3 cm 2 /Vs. For improved electron transport in the blends, tempering was found to be crucial

  19. Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors

    KAUST Repository

    Choi, Hyun Ho; Rodionov, Yaroslav I.; Paterson, Alexandra F.; Panidi, Julianna; Saranin, Danila; Kharlamov, Nikolai; Didenko, Sergei I.; Anthopoulos, Thomas D.; Cho, Kilwon; Podzorov, Vitaly

    2018-01-01

    Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

  20. Carrier mobility in mesoscale heterogeneous organic materials: Effects of crystallinity and anisotropy on efficient charge transport

    Science.gov (United States)

    Kobayashi, Hajime; Shirasawa, Raku; Nakamoto, Mitsunori; Hattori, Shinnosuke; Tomiya, Shigetaka

    2017-07-01

    Charge transport in the mesoscale bulk heterojunctions (BHJs) of organic photovoltaic devices (OPVs) is studied using multiscale simulations in combination with molecular dynamics, the density functional theory, the molecular-level kinetic Monte Carlo (kMC) method, and the coarse-grained kMC method, which was developed to estimate mesoscale carrier mobility. The effects of the degree of crystallinity and the anisotropy of the conductivity of donors on hole mobility are studied for BHJ structures that consist of crystalline and amorphous pentacene grains that act as donors and amorphous C60 grains that act as acceptors. We find that the hole mobility varies dramatically with the degree of crystallinity of pentacene because it is largely restricted by a low-mobility amorphous region that occurs in the hole transport network. It was also found that the percolation threshold of crystalline pentacene is relatively high at approximately 0.6. This high percolation threshold is attributed to the 2D-like conductivity of crystalline pentacene, and the threshold is greatly improved to a value of approximately 0.3 using 3D-like conductive donors. We propose essential guidelines to show that it is critical to increase the degree of crystallinity and develop 3D conductive donors for efficient hole transport through percolative networks in the BHJs of OPVs.

  1. Charge-carrier transport and recombination in heteroepitaxial CdTe

    International Nuclear Information System (INIS)

    Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-01-01

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  2. Corneal permeation properties of a charged lipid nanoparticle carrier containing dexamethasone

    Science.gov (United States)

    Ban, Junfeng; Zhang, Yan; Huang, Xin; Deng, Guanghan; Hou, Dongzhi; Chen, Yanzhong; Lu, Zhufen

    2017-01-01

    Drug delivery carriers can maintain effective therapeutic concentrations in the eye. To this end, we developed lipid nanoparticles (L/NPs) in which the surface was modified with positively charged chitosan, which engaged in hydrogen bonding with the phospholipid membrane. We evaluated in vitro corneal permeability and release characteristics, ocular irritation, and drug dynamics of modified and unmodified L/NPs in aqueous humor. The size of L/NPs was uniform and showed a narrow distribution. Corneal permeation was altered by the presence of chitosan and was dependent on particle size; the apparent permeability coefficient of dexamethasone increased by 2.7 and 1.8 times for chitosan-modified and unmodified L/NPs, respectively. In conclusion, a chitosan-modified system could be a promising method for increasing the ocular bioavailability of unmodified L/NPs by enhancing their retention time and permeation into the cornea. These findings provide a theoretical basis for the development of effective drug delivery systems in the treatment of ocular disease. PMID:28243093

  3. InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

    Science.gov (United States)

    Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

    2018-03-01

    We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

  4. Storage of charge carriers on emitter molecules in organic light-emitting diodes

    Science.gov (United States)

    Weichsel, Caroline; Burtone, Lorenzo; Reineke, Sebastian; Hintschich, Susanne I.; Gather, Malte C.; Leo, Karl; Lüssem, Björn

    2012-08-01

    Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)2(acac)] are studied by time-resolved electroluminescence measurements. A transient overshoot after voltage turn-off is found, which is attributed to electron accumulation on Ir(MDQ)2(acac) molecules. The mechanism is verified via impedance spectroscopy and by application of positive and negative off-voltages. We calculate the density of accumulated electrons and find that it scales linearly with the doping concentration of the emitter. Using thin quenching layers, we locate the position of the emission zone during normal OLED operation and after voltage turn-off. In addition, the transient overshoot is also observed in three-color white-emitting OLEDs. By time- and spectrally resolved measurements using a streak camera, we directly attribute the overshoot to electron accumulation on Ir(MDQ)2(acac). We propose that similar processes are present in many state-of-the-art OLEDs and believe that the quantification of charge carrier storage will help to improve the efficiency of OLEDs.

  5. Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

    International Nuclear Information System (INIS)

    Baek, H I; Lee, C H

    2008-01-01

    We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy) 3 ) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp 2 Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{4-(N,N-diphenylamino) phenyl}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A -1 (an external quantum efficiency of 8.5%) at 100 cd m -2 and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested

  6. Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

    Energy Technology Data Exchange (ETDEWEB)

    Baek, H I; Lee, C H [School of Electrical Engineering and Computer Science and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)], E-mail: hibaek75@snu.ac.kr

    2008-05-21

    We have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy){sub 3}) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp{sub 2}Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{l_brace}4-(N,N-diphenylamino) phenyl{r_brace}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A{sup -1} (an external quantum efficiency of 8.5%) at 100 cd m{sup -2} and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested.

  7. Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors

    KAUST Repository

    Choi, Hyun Ho

    2018-04-30

    Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

  8. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya

    2015-02-12

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

  9. Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

    Directory of Open Access Journals (Sweden)

    S. Li

    2018-02-01

    Full Text Available Pentacene based double nano-floating gate memories (NFGM by using gold nanoparticles (Au NPs and reduced graphene oxide (rGO sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT self-assembled monolayers (SAM exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

  10. Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

    Science.gov (United States)

    Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.

    2018-02-01

    Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

  11. Fusion plasma losses due to the charge exchange of injected neutrals

    International Nuclear Information System (INIS)

    Bender, D.J.; Carlson, G.A.

    1975-01-01

    The interaction of a neutral beam, consisting of full, half and third energy components, with a mirror plasma is analyzed. The beam-plasma interaction is assumed to occur via ionization and charge exchange collisions. The plasma was approximated as being spherical in shape, having a uniform density, isotropic velocity distribution, and a mirror plasma energy distribution. It was found that to a first approximation, for plasma energies less than 100 keV, the charge exchange power loss (per injected atom) of the half energy component is at least twice that of the full energy component. For the third energy component, the loss is at least three times that of the full energy component. For some plasma conditions, the neutral beam can act as an energy sink for the plasma due to these charge exchange losses. (U.S.)

  12. Side chain engineering of fused aromatic thienopyrazine based low band-gap polymers for enhanced charge carrier mobility

    KAUST Repository

    Mondal, Rajib

    2011-01-01

    A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.

  13. Influence of magneto-electric coefficient for magnetic and electric charge injection properties in magneto-electric MIS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Yokota, T; Tsuboi, Y; Imura, R; Kito, S; Gomi, M, E-mail: yokota.takeshi@nitech.ac.jp [Department of Material Science and Engineering, Graduate School of Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya City, Aichi, 466-8555 (Japan)

    2011-10-29

    We investigated the electric charge injection properties of a floating-gate type metal-insulator Si capacitor having different-ME gate insulators. The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field.

  14. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Science.gov (United States)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  15. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J.; Gajdos, F.; Blumberger, J., E-mail: j.blumberger@ucl.ac.uk [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

    2016-08-14

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  16. A kinetic Monte Carlo model with improved charge injection model for the photocurrent characteristics of organic solar cells

    Science.gov (United States)

    Kipp, Dylan; Ganesan, Venkat

    2013-06-01

    We develop a kinetic Monte Carlo model for photocurrent generation in organic solar cells that demonstrates improved agreement with experimental illuminated and dark current-voltage curves. In our model, we introduce a charge injection rate prefactor to correct for the electrode grid-size and electrode charge density biases apparent in the coarse-grained approximation of the electrode as a grid of single occupancy, charge-injecting reservoirs. We use the charge injection rate prefactor to control the portion of dark current attributed to each of four kinds of charge injection. By shifting the dark current between electrode-polymer pairs, we align the injection timescales and expand the applicability of the method to accommodate ohmic energy barriers. We consider the device characteristics of the ITO/PEDOT/PSS:PPDI:PBTT:Al system and demonstrate the manner in which our model captures the device charge densities unique to systems with small injection energy barriers. To elucidate the defining characteristics of our model, we first demonstrate the manner in which charge accumulation and band bending affect the shape and placement of the various current-voltage regimes. We then discuss the influence of various model parameters upon the current-voltage characteristics.

  17. Effect of main injection timing for controlling the combustion phasing of a homogeneous charge compression ignition engine using a new dual injection strategy

    International Nuclear Information System (INIS)

    Das, Pranab; Subbarao, P.M.V.; Subrahmanyam, J.P.

    2015-01-01

    Highlights: • A new dual injection concept is developed by minimum geometry modification. • The occurrence of combustion parameters strongly depend on main injection timing. • At higher load, premixed equivalence ratio dominates over main injection timing. • Retarded of main injection timing tends to retard combustion phasing. • Slightly retarded main injection timing is recommended to avoid intense knocking. - Abstract: Homogeneous charge compression ignition combustion of diesel fuel is implemented using a novel dual injection strategy. A new experimental technique is developed to modify a single cylinder direct injection diesel engine to run on homogeneous combustion mode. Effect of main injection timing is investigated covering a range from 26 to 8 crank angle degrees before top dead center with an interval of 3°. Retarded main injection timing is identified as a control strategy for delaying combustion phasing and a means of controlled combustion phasing of direct injection homogeneous charge compression ignition combustion. Two load conditions were investigated and it was observed that at higher load, start of combustion depends more on fuel air equivalence ratio than main injection timing, whereas at low load, it significantly varies with varying main injection timing. Significant improvements in smoke and oxides of nitrogen emissions are observed when compared with the baseline conventional combustion. By studying different combustion parameters, it is observed that there is an improvement in performance and emissions with marginal loss in thermal efficiency when the main injection timing is 20° before top dead center. This is identified as the optimum main injection timing for such homogeneous combustion under the same operating condition

  18. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation

    Science.gov (United States)

    Hamm, Daniel S.; Rust, Mikah; Herrera, Elan H.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Stowe, Ashley; Preston, Jeff; Lukosi, Eric D.

    2018-06-01

    This paper reports on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14-15 fC) than that of alpha particles (3-5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.

  19. On the definition of dielectric permittivity for media with temporal dispersion in the presence of free charge carriers

    International Nuclear Information System (INIS)

    Bordag, M; Geyer, B; Klimchitskaya, G L; Mostepanenko, V M

    2010-01-01

    We show that in the presence of free charge carriers the definition of the frequency-dependent dielectric permittivity requires additional regularization. As an example, the dielectric permittivity of the Drude model is considered and its time-dependent counterpart is derived and analyzed. The respective electric displacement cannot be represented in terms of the standard Fourier integral. The regularization procedure allowing the circumvention of these difficulties is suggested. For the purpose of comparison it is shown that the frequency-dependent dielectric permittivity of insulators satisfies all rigorous mathematical criteria. This permits us to conclude that in the presence of free charge carriers the concept of dielectric permittivity is not as well defined as for insulators and we make a link to widely discussed puzzles in the theory of thermal Casimir force which might be caused by the use of this kind of permittivities.

  20. On the definition of dielectric permittivity for media with temporal dispersion in the presence of free charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Bordag, M; Geyer, B; Klimchitskaya, G L; Mostepanenko, V M [Institute for Theoretical Physics, Leipzig University, Postfach 100920, D-04009, Leipzig (Germany)

    2010-01-08

    We show that in the presence of free charge carriers the definition of the frequency-dependent dielectric permittivity requires additional regularization. As an example, the dielectric permittivity of the Drude model is considered and its time-dependent counterpart is derived and analyzed. The respective electric displacement cannot be represented in terms of the standard Fourier integral. The regularization procedure allowing the circumvention of these difficulties is suggested. For the purpose of comparison it is shown that the frequency-dependent dielectric permittivity of insulators satisfies all rigorous mathematical criteria. This permits us to conclude that in the presence of free charge carriers the concept of dielectric permittivity is not as well defined as for insulators and we make a link to widely discussed puzzles in the theory of thermal Casimir force which might be caused by the use of this kind of permittivities.

  1. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya

    2015-08-10

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  2. Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs

    Science.gov (United States)

    Yang, S. Y.; Liu, D.; Jiang, Y.; Teng, F.; Xu, Z.; Hou, Y.; Xu, X. R.

    2006-08-01

    Charge carriers bulk recombination instead of forming electroplex after their tunneling through a hole-blocking layer, i.e. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), in organic electroluminescence (EL) device ITO/poly-(N-vinyl-carbazole)(PVK)/BCP/tris(8-hydroxyquinoline) aluminum (Alq3)/Al is reported. By changing the thickness of BCP layer, one can find that high electric fields enhance the tunneling process of holes accumulated at the PVK/BCP interface into BCP layer instead of forming “electroplex emission” as reported earlier in literatures. Our experimental data show that charge carriers bulk recombination takes place in both PVK layer and BCP layer, and even in Alq3 layer when BCP layer is thin enough. Further, it is suggested that PVK is the origin of the emission shoulder at 595 nm in the EL spectra of trilayer device ITO/PVK/BCP/Alq3/Al.

  3. The Role of Polymer Fractionation in Energetic Losses and Charge Carrier Lifetimes of Polymer: Fullerene Solar Cells

    KAUST Repository

    Baran, Derya; Vezie, Michelle S; Gasparini, Nicola; Deledalle, Florent; Yao, Jizhong; Schroeder, Bob C.; Bronstein, Hugo; Ameri, Tayebeh; Kirchartz, Thomas; McCulloch, Iain; Nelson, Jenny; Brabec, Christoph J

    2015-01-01

    Non-radiative recombination reduces the open-circuit voltage relative to its theoretical limit and leads to reduced luminescence emission at a given excitation. Therefore it is possible to correlate changes in luminescence emission with changes in open-circuit voltage and in the charge carrier lifetime. Here we use luminescence studies combined with transient photovoltage and differential charging analyses to study the effect of polymer fractionation in indacenoedithiophene-co-benzothiadiazole (IDTBT):fullerene solar cells. In this system, polymer fractionation increases electroluminescence and reduces non-radiative recombination. High molecular weight and fractionated IDTBT polymers exhibit higher carrier lifetime-mobility product compared to their non-fractionated analogues, resulting in improved solar cell performance.

  4. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Cheng, Gary J., E-mail: gjcheng@purdue.edu [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Zhang, Martin Y. [School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Wang, Yuefeng [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Das, Suprem R.; Bhat, Venkataprasad S. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States); Huang, Fuqiang [Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050 (China)

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  5. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.

    2015-04-07

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  6. The Impact of Donor-Acceptor Phase Separation on the Charge Carrier Dynamics in pBTTT:PCBM Photovoltaic Blends

    KAUST Repository

    Gehrig, Dominik W.; Howard, Ian A.; Sweetnam, Sean; Burke, Timothy M.; McGehee, Michael D.; Laquai, Fré dé ric

    2015-01-01

    The effect of donor–acceptor phase separation, controlled by the donor–acceptor mixing ratio, on the charge generation and recombination dynamics in pBTTT-C14:PC70BM bulk heterojunction photovoltaic blends is presented. Transient absorption (TA) spectroscopy spanning the dynamic range from pico- to microseconds in the visible and near-infrared spectral regions reveals that in a 1:1 blend exciton dissociation is ultrafast; however, charges cannot entirely escape their mutual Coulomb attraction and thus predominantly recombine geminately on a sub-ns timescale. In contrast, a polymer:fullerene mixing ratio of 1:4 facilitates the formation of spatially separated, that is free, charges and reduces substantially the fraction of geminate charge recombination, in turn leading to much more efficient photovoltaic devices. This illustrates that spatially extended donor or acceptor domains are required for the separation of charges on an ultrafast timescale (<100 fs), indicating that they are not only important for efficient charge transport and extraction, but also critically influence the initial stages of free charge carrier formation.

  7. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl

    2013-01-31

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  8. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl; Cho, Eunkyung; Malafeev, Alexander; Ivanov, Viktor; Kremer, Kurt; Risko, Chad; Bré das, Jean-Luc; Andrienko, Denis

    2013-01-01

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  9. Calibration by precise charge injection of a sub-detector of CMS; Calibration par injection de charge du calorimetre electromagnetique de CMS

    Energy Technology Data Exchange (ETDEWEB)

    Yong-Wook Baek

    2001-01-26

    This thesis was carried out within the framework of the international collaboration which has the responsibility of the experience CMS (Compact Muon Solenoid) on LHC, at CERN. The physics of the fundamental particles which will be explored by this experiment is described within the standard model. The configuration of sub-detector of CMS is briefly described, with a particular weight on the read-out chain of the electromagnetic calorimeter. The work carried out to calibrate this chain by a precise charge injection at the input of preamplifiers is described. The 4 integrated circuits CTRL, TPLS, DAC, and injector which will constitute the components of this chain of calibration are described. The circuit of injection, which is the main circuit in this project, was imagined and developed at the laboratory in DMILL technology. This injector generates a signal which has a form identical to the signal of the detector. The measurements on the linearity of the injectors are presented. In order to know its behavior under real conditions (flow of neutrons {approx} 2 x 10{sup 13} neutrons/cm{sup 2}/10 years) where this circuit is installed in detector CMS, we submitted the prototypes of injector to irradiation and the results are summarized. The research and development on this circuit produced an integrated circuit hardened to irradiations, whose variation of slope is lower than 0.25% for an integrated of 2 x 10{sup 13} neutrons/cm{sup 2} and indestructible under 10{sup 15} neutrons/cm{sup 2}. This circuit has satisfactory qualities to be assembled on the electronic card which will treat the data of calorimeter ECAL of CMS. (author)

  10. Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

    KAUST Repository

    Jang, Ji-Wook; Friedrich, Dennis; Mü ller, Sö nke; Lamers, Marlene; Hempel, Hannes; Lardhi, Sheikha F.; Cao, Zhen; Harb, Moussab; Cavallo, Luigi; Heller, René ; Eichberger, Rainer; van de Krol, Roel; Abdi, Fatwa F.

    2017-01-01

    and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one

  11. Effect of injection energy on residual dose around the charge exchange foil

    Directory of Open Access Journals (Sweden)

    Kazami Yamamoto

    2012-12-01

    Full Text Available The rapid cycling synchrotron (RCS of Japan Proton Accelerator Research Complex (J-PARC and the accumulator ring (AR of Spallation Neutron Source (SNS can be used as high-power pulsed neutron sources. In both cases, the injection region becomes one of the highest activation areas in the ring. However, residual dose distributions have revealed that the highest activation points in the J-PARC RCS and the SNS AR are different in detail. The dose of the charge exchange chamber in the SNS is more than 100 times larger than that of the RCS though the ratio of beam power is less than 10. We investigated the reason of this difference by Geant4 and MARS, and the calculation results indicated that the difference was due to the dependence of the neutron and pion production rate on the injection energy.

  12. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    CERN Document Server

    Smolyar, V A; Eremin, V V

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well

  13. Distribution of separated energy and injected charge at normal falling of fast electron beam on target

    International Nuclear Information System (INIS)

    Smolyar, V.A.; Eremin, A.V.; Eremin, V.V.

    2002-01-01

    In terms of a kinetic equation diffusion model for a beam of electrons falling on a target along the normal one derived analytical formulae for distributions of separated energy and injected charge. In this case, no empirical adjustable parameters are introduced to the theory. The calculated distributions of separated energy for an electron plate directed source within infinite medium for C, Al, Sn and Pb are in good consistency with the Spencer data derived on the basis of the accurate solution of the Bethe equation being the source one in assumption of a diffusion model, as well [ru

  14. Estimation of instantaneous heat transfer coefficients for a direct-injection stratified-charge rotary engine

    Science.gov (United States)

    Lee, C. M.; Addy, H. E.; Bond, T. H.; Chun, K. S.; Lu, C. Y.

    1987-01-01

    The main objective of this report was to derive equations to estimate heat transfer coefficients in both the combustion chamber and coolant pasage of a rotary engine. This was accomplished by making detailed temperature and pressure measurements in a direct-injection stratified-charge rotary engine under a range of conditions. For each sppecific measurement point, the local physical properties of the fluids were calculated. Then an empirical correlation of the coefficients was derived by using a multiple regression program. This correlation expresses the Nusselt number as a function of the Prandtl number and Reynolds number.

  15. Performance and combustion characteristics of direct-injection stratified-charge rotary engines

    Science.gov (United States)

    Nguyen, Hung Lee

    1987-01-01

    Computer simulations of the direct-injection stratified-charge (DISC) Wankel engine have been used to calculate heat release rates and performance and efficiency characteristics of the 1007R engine. Engine pressure data have been used in a heat release analysis to study the effects of heat transfer, leakage, and crevice flows. Predicted engine performance data are compared with experimental test data over a range of engine speeds and loads. An examination of methods to improve the performance of the Wankel engine with faster combustion, reduced leakage, higher compression ratio, and turbocharging is presented.

  16. Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

    KAUST Repository

    Jang, Ji-Wook

    2017-08-25

    Widespread application of solar water splitting for energy conversion is largely dependent on the progress in developing not only efficient but also cheap and scalable photoelectrodes. Metal oxides, which can be deposited with scalable techniques and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one of the most promising metal oxide photoelectrodes, as a method to overcome the carrier transport limitations. Time-resolved microwave and terahertz conductivity measurements reveal more than twofold enhancement of the carrier lifetime for the hydrogen-treated BiVO4, without significantly affecting the carrier mobility. This is in contrast to the case of tungsten-doped BiVO4, although hydrogen is also a donor type dopant in BiVO4. The enhancement in carrier lifetime is found to be caused by significant reduction of trap-assisted recombination, either via passivation or reduction of deep trap states related to vanadium antisite on bismuth or vanadium interstitials according to density functional theory calculations. Overall, these findings provide further insights on the interplay between defect modulation and carrier transport in metal oxides, which benefit the development of low-cost, highly-efficient solar energy conversion devices.

  17. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  18. Temperature-dependent charge injection and transport in pentacene thin-film transistors

    International Nuclear Information System (INIS)

    Kim, Dong Wook; Shin, Hyunji; Choi, Jong Sun; Park, Ji-Ho; Park, Jaehoon

    2015-01-01

    The electrical characteristics of p-channel pentacene thin-film transistors (TFTs) were analyzed at different operating temperatures ranging from 253 to 353 K. An improvement in the drain current and field-effect mobility of the pentacene TFTs is observed with increasing temperature. From the Arrhenius plots of field-effect mobility extracted at various temperatures, a lower activation energy of 99.34 meV was obtained when the device is operating in the saturation region. Such observation is ascribed to the thermally activated hole transport through the pentacene grain boundaries. On the other hand, it was found that the Au/pentacene contact significantly affects the TFTs electrical characteristics in the linear region, which resulted in a higher activation energy. The activation energy based on the linear field-effect mobility, which increased from 344.61 to 444.70 meV with decreasing temperature, implies the charge-injection-limited electrical behavior of pentacene TFTs at low temperatures. The thermally induced electrical characteristic variations in pentacene TFTs can thus be studied through the temperature dependence of the charge injection and transport processes. (paper)

  19. A Fast pH-Switchable and Self-Healing Supramolecular Hydrogel Carrier for Guided, Local Catheter Injection in the Infarcted Myocardium

    OpenAIRE

    Bastings, Maartje M. C.; Koudstaal, Stefan; Kieltyka, Roxanne E.; Nakano, Yoko; Pape, A. C. H.; Feyen, Dries A. M.; van Slochteren, Frebus J.; Doevendans, Pieter A.; Sluijter, Joost P. G.; Meijer, E. W.; Chamuleau, Steven A. J.; Dankers, Patricia Y. W.

    2014-01-01

    Minimally invasive intervention strategies after myocardial infarction use state-of-the-art catheter systems that are able to combine mapping of the infarcted area with precise, local injection of drugs. To this end, catheter delivery of drugs that are not immediately pumped out of the heart is still challenging, and requires a carrier matrix that in the solution state can be injected through a long catheter, and instantaneously gelates at the site of injection. To address this unmet need, a ...

  20. Study of the Bulk Charge Carrier Dynamics in Anatase and Rutile TiO2 Single Crystals by Femtosecond Time Resolved Spectroscopy

    KAUST Repository

    Maity, Partha; Mohammed, Omar F.; Katsiev, Khabiboulakh; Idriss, Hicham

    2018-01-01

    as the best model for fundamental studies. Their ultrafast charge carrier dynamics especially on TiO2 anatase single crystal (the most active phase) are unresolved. Here femtosecond time resolved spectroscopy (TRS) was carried out to explore the dynamics

  1. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  2. Spin-polarized carrier injection effect in ferromagnetic semiconductor/diffusive semiconductor/superconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Akazaki, T [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan); Sawa, Y; Yokoyama, T; Tanaka, Y [Department of Applied Physics, Nagoya University, Nagoya, 464-8603 Japan (Japan); Golubov, A A [Faculty of Science and Technology, University of Twente, Enschede (Netherlands); Munekata, H [Image Science and Engineering Lab., Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8503 Japan (Japan); Nishizawa, N; Takayanagi, H [International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 3-13 Sakura, Tsukuba, 305-0003 Japan (Japan)], E-mail: h-taka@rs.kagu.tus.ac.jp

    2009-02-01

    We study the transport properties of a p-InMnAs/n-InAs/Nb junction where a p-InMnAs can be regarded as a spin injector. Differential conductance of the n-InAs channel is measured as a function of injection current from p-InMnAs or from Nb at 20 mK. A conductance minimum appears at zero-bias voltage with no current injection. As the injection current from p-InMnAs increases, the minimum gradually disappears. This conductance behaviour is very different from that of the injection case from Nb. We also calculate the conductance in the n-InAs channel by taking account of the exchange field in the InAs channel that is induced by InMnAs ferromagnet. The difference between the conductance behaviours on injection current direction can be explained by the inverse proximity effect that the exchange field is also induced in the superconducting electrode.

  3. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  4. Multi-THz spectroscopy of mobile charge carriers in P3HT:PCBM on a sub-100 fs time scale

    DEFF Research Database (Denmark)

    Cooke, David G.; Krebs, Frederik C; Jepsen, Peter Uhd

    2013-01-01

    The dynamics of mobile charge carrier generation in polymer bulk heterojunction films is of vital importance to the development of more efficient organic photovoltaics. As with conventional semiconductors, the optical signatures of mobile carriers lie in the far-infrared (1-30 THz) although...

  5. Charge transfer and injection barrier at the metal-organic interfaces

    Science.gov (United States)

    Yan, Li

    2002-09-01

    The metal-organic interface plays a critical role in determining the functionality and performance of many innovative organic based devices. It has attracted extensive research interests in recent years. This thesis presents investigations of the electronic structures of organic materials, such as tris-(8-hydroxyquinoline) aluminum (Alq3) and copper phthalocyanine (CuPc), during their interface formation with metals. The characterization is accomplished by X-ray and ultraviolet photoelectron spectroscopes (XPS and UPS) and inverse photoelectron spectroscopy (IPES). As discussed herein, both occupied and unoccupied electronic states at the interfaces are carefully examined in different aspects. In Chapter 4, the charge transfer and chemical reaction at various metal/Alq3 interfaces are investigated using XPS and UPS to study the electron injection into the Alga film. Electron transfer from the low work function metal and Al/LiF(CsF) bilayer to the Alga has been observed. The role of the dielectric and possible chemistry at the interface are discussed in comparison of the low work function metals. Further in Chapter 5, the origin of the metal-interface dipole and the estimation of charge injection barrier is explored using several organic materials. A thermodynamic equilibrium model is extended to explain the relation between the charge transfer process ad the interface dipole. Further, in Chapter 6 the combination of XPS, UPS and IPES detailed the evolution of both occupied and unoccupied energy states during the alkali metal doping. The energy gap modification in organic due to metal doping is observed directly for the spectra. Chapter 7 provides stability study of the organic thin films under x-ray and UV light. The results verify the usability of UPS and XPS for the organic materials used in the thesis. Chapter 7 also shows the secondary ion mass spectroscopy results of metal diffusion in organic thin films.

  6. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    International Nuclear Information System (INIS)

    Auden, E.C.; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-01-01

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0_._3Ga_0_._7As/GaAs/Al_0_._2_5Ga_0_._7_5As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  7. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    Energy Technology Data Exchange (ETDEWEB)

    Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-05-15

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  8. Construction of a Direct Water-Injected Two-Stroke Engine for Phased Direct Fuel Injection-High Pressure Charging Investigations

    Science.gov (United States)

    Somsel, James P.

    1998-01-01

    The development of a water injected Orbital Combustion Process (OCP) engine was conducted to assess the viability of using the powerplant for high altitude NASA aircraft and General Aviation (GA) applications. An OCP direct fuel injected, 1.2 liter, three cylinder, two-stroke engine has been enhanced to independently inject water directly into the combustion chamber. The engine currently demonstrates low brake specific fuel consumption capability and an excellent power to weight ratio. With direct water injection, significant improvements can be made to engine power, to knock limits/ignition advance timing, and to engine NO(x) emissions. The principal aim of the testing was to validate a cyclic model developed by the Systems Analysis Branch at NASA Ames Research Center. The work is a continuation of Ames' investigations into a Phased Direct Fuel Injection Engine with High Pressure Charging (PDFI-ITPC).

  9. Dependence of the carrier mobility and trapped charge limited conduction on silver nanoparticles embedment in doped polypyrrole nanostructures

    Science.gov (United States)

    Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu

    2013-10-01

    The present article demonstrates an intensive study upon the temperature dependent current density (J)-voltage (V) characteristics of moderately doped polypyrrole nanostructure and its silver nanoparticles incorporated nanocomposites. Analysis of the measured J-V characteristics of different synthesized nano-structured samples within a wide temperature range revealed that the electrical conduction behavior followed a trapped charge-limited conduction and a transition of charge transport mechanism from deep exponential trap limited conduction to shallow traps limited conduction had been occurred due to the incorporation of silver nanoparticles within the polypyrrole matrix. A direct evaluation of carrier mobility as a function of electric field and temperature from the measured J-V characteristics illustrates that the incorporation of silver nanoparticles within the polypyrrole matrix enhances the carrier mobility at a large extent by reducing the concentration of traps within the polypyrrole matrix. The calculated mobility is consistent with the Poole-Frenkel form for the electrical field up to a certain temperature range. The nonlinear low temperature dependency of mobility of all the nanostructured samples was explained by Mott variable range hopping conduction mechanisms. Quantitative information regarding the charge transport parameters obtained from the above study would help to extend optimization strategies for the fabrication of new organic semiconducting nano-structured devices.

  10. Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base

    International Nuclear Information System (INIS)

    Huang, Jinying; Ma, Dongge; Hümmelgen, Ivo A

    2013-01-01

    We report hybrid vertical architecture p-type transistors with poly(N-vinylcarbazole) as the emitter, p-type silicon as the collector and Al:Ca alloy layer as the base. The investigation of the common-base and common-emitter characteristics clearly demonstrates that the devices operate as permeable-base transistors (PBTs). The PBTs show common-base current gain α of 0.98 at −V BC = 1.5 V and common-emitter gain β of over 100. Atomic force microscope images of the base layer show an uneven surface, showing that the annealing does not dissolve the charge trap states but offers ‘pinholes’ for the oxidation in-depth even through the whole base layer. In this case, the charge carriers must tunnel the thin oxidized layer, and then are collected. It is clearly seen that there exists a barrier against holes injection from the base to the collector semiconductor at the interface, and the further oxidation caused by exposing the devices in air changes the operational mode of the resulting devices from the PBT to the metal-base transistor. (paper)

  11. Controlling the efficiency of spin injection into graphene by carrier drift

    NARCIS (Netherlands)

    Jozsa, C.; Popinciuc, M.; Tombros, N.; Jonkman, H. T.; van Wees, B. J.

    Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in

  12. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed

  13. Effects of carrier concentrations on the charge transport properties in monolayer silicene

    International Nuclear Information System (INIS)

    Abidin, B I; Yeoh, K H; Yong, T K; Ong, D S

    2017-01-01

    Using analytical band Monte Carlo approach, we have carried out a systematic study on the effects of carrier concentrations on the steady-state and transient electron transports that occur within a monolayer silicene. In particular, we have observed the following: First at steady-state, the electron mobility reduces with higher carrier concentrations. Secondly, in the transient regime we found that the drift velocity overshoot can be controlled by varying the carrier concentrations. We uncover that at carrier concentration of 1  ×  10 13 cm −2 , the drift velocity overshoot can reach up to 3.8  ×  10 7 cm s −1 which is close to the steady-state drift velocity saturation of graphene. Thirdly, the distance of the velocity over shoot can be further extended with higher carrier concentrations. Our findings could be useful and can be used as benchmark for future development of nanoscale silicene based devices. (paper)

  14. Generation of reactive oxygen species and charge carriers in plasmonic photocatalytic Au@TiO2 nanostructures with enhanced activity.

    Science.gov (United States)

    He, Weiwei; Cai, Junhui; Jiang, Xiumei; Yin, Jun-Jie; Meng, Qingbo

    2018-06-13

    The combination of semiconductor and plasmonic nanostructures, endowed with high efficiency light harvesting and surface plasmon confinement, has been a promising way for efficient utilization of solar energy. Although the surface plasmon resonance (SPR) assisted photocatalysis has been extensively studied, the photochemical mechanism, e.g. the effect of SPR on the generation of reactive oxygen species and charge carriers, is not well understood. In this study, we take Au@TiO2 nanostructures as a plasmonic photocatalyst to address this critical issue. The Au@TiO2 core/shell nanostructures with tunable SPR property were synthesized by the templating method with post annealing thermal treatment. It was found that Au@TiO2 nanostructures exhibit enhanced photocatalytic activity in either sunlight or visible light (λ > 420 nm). Electron spin resonance spectroscopy with spin trapping and spin labeling was used to investigate the enhancing effect of Au@TiO2 on the photo-induced reactive oxygen species and charge carriers. The formation of Au@TiO2 core/shell nanostructures resulted in a dramatic increase in light-induced generation of hydroxyl radicals, singlet oxygen, holes and electrons, as compared with TiO2 alone. This enhancement under visible light (λ > 420 nm) irradiation may be dominated by SPR induced local electrical field enhancement, while the enhancement under sunlight irradiation is dominated by the higher electron transfer from TiO2 to Au. These results unveiled that the superior photocatalytic activity of Au@TiO2 nanostructures correlates with enhanced generation of reactive oxygen species and charge carriers.

  15. The quantic distribution of mobile carriers in a surface charge coupled device

    International Nuclear Information System (INIS)

    Ionescu, M.

    1977-01-01

    The quantic distribution of the electrons in a surface charge coupled device (CCD), for a MIS structure with a real insulator (finite difference energy between the conduction bands of the insulator and of the semiconductor) is presented. A fundamental limitation of the charge transfer in a surface CCD is obtained. (author)

  16. Charge carrier mobility in poly[methyl(phenyl)silylene] studied by time-resolved terahertz spectroscopy and molecular modeling

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Kratochvílová, Irena; Kužel, Petr; Šebera, Jakub; Kochalska, Anna; Nožár, Juraj; Nešpůrek, Stanislav

    2011-01-01

    Roč. 13, č. 7 (2011), s. 2850-2856 ISSN 1463-9076 R&D Projects: GA ČR(CZ) GP202/09/P099; GA ČR GA203/08/1594; GA AV ČR KAN401770651; GA MŠk LC512; GA ČR(CZ) GAP304/10/1951 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40500505 Keywords : molecular electronics * THz spectroscopy * charge carrier mobility Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.573, year: 2011

  17. Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

    International Nuclear Information System (INIS)

    Aleksandrov, A.L.; Vedeneev, A.S.; Gulyaev, I.B.; Zhdan, A.G.

    1982-01-01

    A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm 2 /Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

  18. Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

    Science.gov (United States)

    Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

    2014-12-21

    We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

  19. Charge carrier motion in disordered conjugated polymers: a multiscale ab-initio study

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    We developed an ab-initio multiscale method for simulation of carrier transport in large disordered systems, based on direct calculation of electronic states and electron-phonon coupling constants. It enabled us to obtain the never seen before rich microscopic details of carrier motion in conjugated polymers, which led us to question several assumptions of phenomenological models, widely used in such systems. The macroscopic mobility of disordered poly(3- hexylthiophene) (P3HT) polymer, extracted from our simulation, is in agreement with experimental results from the literature.

  20. The Myotoxic Effects of Microencapsulated Naproxen and Carrier Polymer After Intramuscular Injection in Rats

    Science.gov (United States)

    1996-10-10

    Board (LARE) on 22 March 1995: Title of ADtJlicatioo: Protocol Number: "Evaluaton ofDermallMyotoxicity from Injection of Lecithin - Coated NSlD’s (Rat...pain and ana1gesia in clinical studies. In Max, M., Portenoy, R., & Laska, E. (Eds.), Advances in pain research and therapy . The design of anal...ofliposomes in mice. International Journal of Clinical Pharmacology, Therapy and Toxicology, 10,374-382. Kehlet. H. (1982) . The endocrine· metabolic

  1. Injectable biodegradable carriers for the delivery of therapeutic agents and tissue engineering

    OpenAIRE

    Levato, Riccardo

    2015-01-01

    Premi Extraordinari de Doctorat, promoció 2014-2015. Àmbit d'Enginyeria Industrial The design of smart biomaterial devices plays a key role to improve the way conventional therapies are being delivered, and to promote the development of new approaches for advanced therapies, such as regenerative medicine and targeted drug release. Injectable biodegradable materials, such as those consisting of suspensions of polymeric particles, are highly versatile devices that can be delivered through mi...

  2. Dewetting based fabrication of fibrous micro-scaffolds as potential injectable cell carriers.

    Science.gov (United States)

    Song, Hokyung; Yin, Liya; Chilian, William M; Zhang Newby, Bi-Min

    2015-03-01

    Although regenerative medicine utilizing tissue scaffolds has made enormous strides in recent years, many constraints still hamper their effectiveness. A limitation of many scaffolds is that they form surface patches, which are not particularly effective for some types of "wounds" that are deep within tissues, e.g., stroke and myocardial infarction. In this study, we reported the generation of fibrous micro-scaffolds feasible for delivering cells by injection into the tissue parenchyma. The micro-scaffolds (widthsdewetting of poly(lactic-co-glycolic acid) thin films containing parallel strips, and cells were seeded to form cell/polymer micro-constructs during or post the micro-scaffold fabrication process. Five types of cells including rat induced vascular progenitor cells were assessed for the formation of the micro-constructs. Critical factors in forming fibrous micro-scaffolds via dewetting of polymer thin films were found to be properties of polymers and supporting substrates, temperature, and proteins in the culture medium. Also, the ability of cells to attach to the micro-scaffolds was essential in forming cell/polymer micro-constructs. Both in vitro and in vivo assessments of injecting these micro-scaffolding constructs showed, as compared to free cells, enhanced cell retention at the injected site, which could lead to improved tissue engineering and regeneration. Copyright © 2014 Elsevier B.V. All rights reserved.

  3. Chemical vapour deposition diamond. Charge carrier movement at low temperatures and use in time-critical applications

    International Nuclear Information System (INIS)

    Jansen, Hendrik

    2013-09-01

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, over laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  4. Nanocrystals in the glass and centers of localization of free charge carriers in the thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2012-01-01

    Conduction mechanism of doped silicate glass (DSG) based on existence of nanocrystals in the glass is proposed. These nanocrystals act as localization centers of free charge carriers. Random distribution of the nanocrystal's sizes and distances between them leads to charge transport by variable length hopping. It is shown that dopant atoms generate the narrow impurity subband of 0.03 eV in width. This subband joins close to the glass valence band top or slightly (less than 0.01 eV) separated from the last. What is why the hopping mechanism coexists with thermal activation one and at low temperatures (T -n ), 0.25 800 K) structure transitions of nanocrystals take place and conductivity of DSG decreases sharply. Beyond of the minimum of conductivity (above 1000 K) energy gap is formed between the impurity subband and the valence band top of glass, so DSG behaves like a typical semiconductor. (author)

  5. Chemical Vapour Deposition Diamond - Charge Carrier Movement at Low Temperatures and Use in Time-Critical Applications

    CERN Document Server

    Jansen, Hendrik; Pernegger, Heinz

    Diamond, a wide band gap semiconductor with exceptional electrical properties, has found its way in diverse fields of application reaching from the usage as a sensor material for beam loss monitors at particle accelerator facilities, to laser windows, to UV light sensors in space applications, e.g. for space weather forecasting. Though often used at room temperature, little is known about the charge transport in diamond towards liquid helium temperatures. In this work the method of the transient current technique is employed at temperatures between room temperature and 2 K. The temperature and electric field strength dependence of the pulse shape, the charge carrier transit time, the drift velocity, the saturation velocity, and the low-field mobility is measured in detector-grade scCVD diamond. Furthermore, the usability of diamond in time-critical applications is tested, and the main results are presented.

  6. Fuel-air mixing and distribution in a direct-injection stratified-charge rotary engine

    Science.gov (United States)

    Abraham, J.; Bracco, F. V.

    1989-01-01

    A three-dimensional model for flows and combustion in reciprocating and rotary engines is applied to a direct-injection stratified-charge rotary engine to identify the main parameters that control its burning rate. It is concluded that the orientation of the six sprays of the main injector with respect to the air stream is important to enhance vaporization and the production of flammable mixture. In particular, no spray should be in the wake of any other spray. It was predicted that if such a condition is respected, the indicated efficiency would increase by some 6 percent at higher loads and 2 percent at lower loads. The computations led to the design of a new injector tip that has since yielded slightly better efficiency gains than predicted.

  7. Performance of a supercharged direct-injection stratified-charge rotary combustion engine

    Science.gov (United States)

    Bartrand, Timothy A.; Willis, Edward A.

    1990-01-01

    A zero-dimensional thermodynamic performance computer model for direct-injection stratified-charge rotary combustion engines was modified and run for a single rotor supercharged engine. Operating conditions for the computer runs were a single boost pressure and a matrix of speeds, loads and engine materials. A representative engine map is presented showing the predicted range of efficient operation. After discussion of the engine map, a number of engine features are analyzed individually. These features are: heat transfer and the influence insulating materials have on engine performance and exhaust energy; intake manifold pressure oscillations and interactions with the combustion chamber; and performance losses and seal friction. Finally, code running times and convergence data are presented.

  8. A study of a direct-injection stratified-charge rotary engine for motor vehicle application

    Science.gov (United States)

    Kagawa, Ryoji; Okazaki, Syunki; Somyo, Nobuhiro; Akagi, Yuji

    1993-03-01

    A study of a direct-injection stratified-charge system (DISC), as applied to a rotary engine (RE) for motor vehicle usage, was undertaken. The goals of this study were improved fuel consumption and reduced exhaust emissions. These goals were thought feasible due to the high thermal efficiency associated with the DISC-RE. This was the first application of this technology to a motor vehicle engine. Stable ignition and ideal stratification systems were developed by means of numerical calculations, air-fuel mixture measurements, and actual engine tests. The use of DISC resulted in significantly improved fuel consumption and reduced exhaust emissions. The use of an exhaust gas recirculating system was studied and found to be beneficial in NOx reduction.

  9. Charge transport in organic transistors accounting for a wide distribution of carrier energies, Part I : Theory

    NARCIS (Netherlands)

    Torricelli, F.

    2012-01-01

    An extended theory of carrier hopping transport in organic transistors is proposed. According to many experimental studies, the density of localized states in organic thin-film transistors can be described by a double-exponential function. In this work, using a percolation model of hopping, the

  10. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    Science.gov (United States)

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials.

  11. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Science.gov (United States)

    Dell'Erba, Giorgio; Luzio, Alessandro; Natali, Dario; Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu; Noh, Yong-Young; Caironi, Mario

    2014-04-01

    Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10-4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  12. Contact engineering for efficient charge injection in organic transistors with low-cost metal electrodes

    Science.gov (United States)

    Panigrahi, D.; Kumar, S.; Dhar, A.

    2017-10-01

    Controlling charge injection at the metal-semiconductor interface is very crucial for organic electronic devices in general as it can significantly influence the overall device performance. Herein, we report a facile, yet efficient contact modification approach, to enhance the hole injection efficiency through the incorporation of a high vacuum deposited TPD [N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine] interlayer between the electrodes and the active semiconducting layer. The device performance parameters such as mobility and on/off ratio improved significantly after the inclusion of the TPD buffer layer, and more interestingly, the devices with cost effective Ag and Cu electrodes were able to exhibit a superior device performance than the typically used Au source-drain devices. We have also observed that this contact modification technique can be even more effective than commonly used metal oxide interface modifying layers. Our investigations demonstrate the efficacy of the TPD interlayer in effectively reducing the interfacial contact resistance through the modification of pentacene energy levels, which consequently results in the substantial improvement in the device performances.

  13. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    International Nuclear Information System (INIS)

    Hwang, Hyun-Sik; Khang, Dahl-Young

    2015-01-01

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s

  14. Charge carrier dynamics in PMMA-LiClO4 based polymer electrolytes plasticized with different plasticizers

    Science.gov (United States)

    Pal, P.; Ghosh, A.

    2017-07-01

    We have studied the charge carrier dynamics in poly(methylmethacrylate)-LiClO4 polymer electrolytes plasticized with different plasticizers such as ethylene carbonate (EC), propylene carbonate (PC), polyethylene glycol (PEG), and dimethyl carbonate (DMC). We have measured the broadband complex conductivity spectra of these electrolytes in the frequency range of 0.01 Hz-3 GHz and in the temperature range of 203 K-363 K and analyzed the conductivity spectra in the framework of the random barrier model by taking into account the contribution of the electrode polarization observed at low frequencies and/or at high temperatures. It is observed that the temperature dependences of the ionic conductivity and relaxation time follow the Vogel-Tammann-Fulcher relation for all plasticized electrolytes. We have also performed the scaling of the conductivity spectra, which indicates that the charge carrier dynamics is almost independent of temperature and plasticizers in a limited frequency range. The existence of nearly constant loss in these electrolytes has been observed at low temperatures and/or high frequencies. We have studied the dielectric relaxation in these electrolytes using electric modulus formalism and obtained the stretched exponent and the decay function. We have observed less cooperative ion dynamics in electrolytes plasticized with DMC compared to electrolytes plasticized with EC, PC, and PEG.

  15. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    Science.gov (United States)

    Pal, P.; Ghosh, A.

    2016-07-01

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  16. Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-07-15

    To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Determination of energy band diagram and charge carrier mobility of white emitting polymer from optical, electrical and impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Mohd Sarjidan, M.A., E-mail: mohd.arif@um.edu.my; Mohd Mokhtar, H.A.; Abd Majid, W.H., E-mail: q3haliza@um.edu.my

    2015-03-15

    A single-layer white polymer light-emitting device (WPLED) has been fabricated using spin coating technique. The device was constructed as ITO/PEDOT:PSS(50 nm)/SPW-111(50 nm)/LiF(1 nm)/Al(100 nm). Indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) are used as the transparent anode. SPW-111 is fabricated as a white emissive layer and lithium fluoride (LiF) and aluminum (Al) are used as reflecting cathode. Energy band diagram of the device was estimated from a combination of ultraviolet–visible (UV–vis) and current–voltage (J–V) analyses. Charge carrier mobility (μ) of PLED was evaluated using negative differential susceptance (−ΔB) method from impedance spectroscopy (IS) analysis. The calculated μ of the SPW-111 device is in the magnitude of 10{sup −6} cm{sup 2}/V/s. - Highlights: • Single layer PLED has been fabricated with spin-coating technique and device performance has been evaluated. • Energy band diagram of the SPW-111 is estimated from optical and electrical analyses. • Charge carrier mobility of the SPW-111 materials is obtained by impedance spectroscopy.

  18. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    Energy Technology Data Exchange (ETDEWEB)

    Pal, P.; Ghosh, A., E-mail: sspag@iacs.res.in [Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2016-07-28

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  19. Experimental evidence for importance of Hund's exchange interaction for incoherence of charge carriers in iron-based superconductors

    Science.gov (United States)

    Fink, J.; Rienks, E. D. L.; Thirupathaiah, S.; Nayak, J.; van Roekeghem, A.; Biermann, S.; Wolf, T.; Adelmann, P.; Jeevan, H. S.; Gegenwart, P.; Wurmehl, S.; Felser, C.; Büchner, B.

    2017-04-01

    Angle-resolved photoemission spectroscopy is used to study the scattering rates of charge carriers from the hole pockets near Γ in the iron-based high-Tc hole-doped superconductors KxBa1 -xFe2As2 , x =0.4 , and KxEu1 -xFe2As2 , x =0.55 , and the electron-doped compound Ba (Fe1-xCox) 2As2 , x =0.075 . The scattering rate for any given band is found to depend linearly on the energy, indicating a non-Fermi-liquid regime. The scattering rates in the hole-doped compound are considerably higher than those in the electron-doped compounds. In the hole-doped systems the scattering rate of the charge carriers of the inner hole pocket is about three times higher than the binding energy, indicating that the spectral weight is heavily incoherent. The strength of the scattering rates and the difference between electron- and hole-doped compounds signals the importance of Hund's exchange coupling for correlation effects in these iron-based high-Tc superconductors. The experimental results are in qualitative agreement with theoretical calculations in the framework of combined density functional dynamical mean-field theory.

  20. On the accuracy of current TCAD hot carrier injection models in nanoscale devices

    Science.gov (United States)

    Zaka, Alban; Rafhay, Quentin; Iellina, Matteo; Palestri, Pierpaolo; Clerc, Raphaël; Rideau, Denis; Garetto, Davide; Dornel, Erwan; Singer, Julien; Pananakakis, Georges; Tavernier, Clément; Jaouen, Hervé

    2010-12-01

    In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model - FM [1], the Lucky Electron Model - LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman's Transport Equation - SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.

  1. Revealing charge carrier dynamics in squaraine:[6, 6]-phenyl-C 71-butyric acid methyl ester based organic solar cells

    Science.gov (United States)

    Rana, Aniket; Sharma, Chhavi; Prabhu, Deepak D.; Kumar, Mahesh; Karuvath, Yoosaf; Das, Suresh; Chand, Suresh; Singh, Rajiv K.

    2018-04-01

    Ultrafast charge carrier dynamics as well as the generation of polaron pair in squaraine (SQ) and squaraine:[6,6]-phenyl-C 71-butyric acid methyl ester (SQ:PCBM71) have been studied using ultrafast transient absorption spectroscopy (UTAS). The current study reveals that the pure SQ exhibits the creation of singlet and triplet states; however, incorporation of PCBM71 in SQ results in the formation of polaron pairs with ˜550ps lifetime, which in turn leads to the creation of free electrons in the device. We show that the considerable increment in monomolecular and bimolecular recombination in SQ:PCBM71 compared to pure SQ which describes the interfacial compatibility of SQ and PCBMC71 molecules. The present work not only provides the information about the carrier generation in SQ and SQ:PCBM71 but also gives the facts relating to the effect of PCBM71 mixing into the SQ which is very significant because the SQ has donor-acceptor-donor (D-A-D) structure and mixing one more acceptor can introduce more complex recombinations in the blend. These findings have been complimented by the charge transport study in the device using impedance spectroscopy. The various important transport parameters are transit time (τt), diffusion constant (Dn), global mobility (μ) and carrier lifetime (τr). The values of these parameters are 26.38 μs, 4.64x10-6 cm2s-1, 6.12x10-6 cm2V-1s-1 and 399 μs, respectively. To the best of our knowledge such study related to SQ is not present in the literature comprehensively.

  2. Plasma dynamics near an earth satellite and neutralization of its electric charge during electron beam injection into the ionosphere

    International Nuclear Information System (INIS)

    Fedorov, V.A.

    2000-01-01

    A study is made of the dynamics of the ionospheric plasma in the vicinity of an earth satellite injecting an electron beam. The time evolution of the electric charge of the satellite is determined. The electric potential of the satellite is found to be well below the beam-cutoff potential. It is shown that, under conditions typical of active experiments in space, the plasma electrons are capable of neutralizing the satellite's charge

  3. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  4. Picosecond charge transport in rutile at high carrier densities studiedby transient terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Zajac, Vít; Němec, Hynek; Kužel, Petr

    2016-01-01

    Roč. 94, č. 11 (2016), 1-9, č. článku 115206. ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Institutional support: RVO:68378271 Keywords : terahertz spectroscopy * charge transport * TiO 2 * rutile * ultrafast spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  5. Charge Carrier Dynamics and pH Effect on Optical Properties of Anionic and Cationic Porphyrin-Graphene Oxide Composites

    Science.gov (United States)

    Bajjou, O.; Bakour, A.; Khenfouch, M.; Baitoul, M.; Mothudi, B.; Maaza, M.; Faulques, E.

    2018-02-01

    Composites of graphene oxide (GO) functionalized with Sn(V) tetrakis (4-pyridyl)porphyrin (SnTPyP2+) and meso-tetrakis(4-phenylsulfonic acid)porphyrin (H4TPPS4 2- ) were prepared at different pH values.Successful synthesis of water-soluble stable suspension of GO-SnTPyP2+ and GO-H4TPPS4 2-was confirmed using various spectroscopic techniques, including scanning electronic microscopy (SEM), Raman spectroscopy, and ultraviolet-visible (UV-Vis) absorption. Variation of the pH was found to strongly influence the optical properties of the GO-SnTPyP2+ and GO-H4TPPS4 2-composites, as demonstrated by the UV-Vis absorption results. Steady-state photoluminescence (PL) and time-resolved PL (TRPL) results for both composites showed PL quenching and decrease in the exciton mean lifetime, suggesting strong excited-state interactions between the different components. Moreover, charge carrier dynamics study revealed that insertion of GO into both porphyrin derivatives led to faster mean lifetime for excitons with a slight advantage in the case of the cationic porphyrin-GO composite, making it a better choice for charge separation applications thanks to the higher efficiency of charge/energy transfer interactions.

  6. The influence of charge injection from intermediate connectors on the performance of tandem organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Dong-Ying [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China); Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Siboni, Hossein Zamani; Wang, Qi; Aziz, Hany, E-mail: lsliao@suda.edu.cn, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Liao, Liang-Sheng, E-mail: lsliao@suda.edu.cn, E-mail: h2aziz@uwaterloo.ca [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-12-14

    Charge generation in a typical intermediate connector, composed of “n-type doped layer/transition metal oxide (TMO)/hole transporting layer (HTL),” of a tandem organic light-emitting device (OLED) has recently been found to arise from charge transfer at the TMO/HTL interfaces. In this paper, we investigate the effect of hole injection barriers from intermediate connectors on the performance of tandem OLEDs. The hole injection barriers are caused by the offset of the highest occupied molecular orbital (HOMO) energy levels between HTLs contained in the intermediate connector and the top electroluminescence (EL) unit. We also find that although charge generation can occur at the interfaces between the TMO and a wide variety of HTLs of different HOMO values, an increase in the hole injection barrier however limits the electroluminescence efficiency of the top EL units. In the case of large hole injection barriers, significant charge accumulation in the HTLs makes the intermediate connector lose its functionality gradually over operating time, and limits device stability.

  7. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Energy Technology Data Exchange (ETDEWEB)

    Dell' Erba, Giorgio; Natali, Dario [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano (Italy); Luzio, Alessandro; Caironi, Mario, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu [Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Noh, Yong-Young, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715 (Korea, Republic of)

    2014-04-14

    Ambipolar semiconducting polymers, characterized by both high electron (μ{sub e}) and hole (μ{sub h}) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μ{sub h} = 0.29 cm{sup 2}/V s and μ{sub e} = 0.001 cm{sup 2}/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μ{sub e} = 0.12 cm{sup 2}/V s and μ{sub h} = 8 × 10{sup −4} cm{sup 2}/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  8. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers.

    Science.gov (United States)

    Sun, Baichuan; Barnard, Amanda S

    2016-08-07

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.

  9. Feature of polaronic charge carriers in polysilanes: Experimental and theoretical approach

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Kochalska, Anna; Nožár, Juraj; Kadashchuk, A.; Fishchuk, I. I.; Sworakowski, J.; Kajzar, F.

    2010-01-01

    Roč. 521, - (2010), s. 72-83 ISSN 1542-1406. [International Conference on Frontiers of Polymers and Advanced Materials /10./. Santiago, 27.09.2009-02.10.2009] R&D Projects: GA AV ČR IAA100100622; GA AV ČR KAN400720701 Institutional research plan: CEZ:AV0Z40500505 Keywords : binding energy * charge mobility * hopping transport Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.543, year: 2010

  10. Charge Carrier Dynamics of Methylammonium Lead-Iodide Perovskite Solar Cells

    OpenAIRE

    Neukom, Martin Thomas

    2016-01-01

    Transient opto-electrical measurements of methylammonium lead iodide (MALI) perovskite solar cells (PSCs) are performed and analyzed in order to elucidate the operating mechanisms. The current response to a light pulse or voltage pulse shows an extraordinarily broad dynamic range covering 9 orders of magnitude in time - from microseconds to minutes - until steady-state is reached. Evidence of a slowly changing charge density at the perovskite layer boundaries is found, which is most probably ...

  11. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    Science.gov (United States)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  12. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  13. Infrared spectroscopic studies on the cluster size dependence of charge carrier structure in nitrous oxide cluster anions

    International Nuclear Information System (INIS)

    Thompson, Michael C.; Weber, J. Mathias

    2016-01-01

    We report infrared photodissociation spectra of nitrous oxide cluster anions of the form (N 2 O) n O − (n = 1–12) and (N 2 O) n − (n = 7–15) in the region 800–1600 cm −1 . The charge carriers in these ions are NNO 2 − and O − for (N 2 O) n O − clusters with a solvation induced core ion switch, and N 2 O − for (N 2 O) n − clusters. The N–N and N–O stretching vibrations of N 2 O − (solvated by N 2 O) are reported for the first time, and they are found at (1595 ± 3) cm −1 and (894 ± 5) cm −1 , respectively. We interpret our infrared spectra by comparison with the existing photoelectron spectroscopy data and with computational data in the framework of density functional theory.

  14. Magnetic dipole self-organization of charge carriers in high-temperature superconductors and kinetics of phase transformation

    CERN Document Server

    Voronov, A V; Shuvalov, V V

    2001-01-01

    The phenomenological model, describing the magnetic dipole self-organization of charge carriers (formation of so-called stripe-structures and energy gap in the states spectrum), is designed for interpreting the data on the nonstationary nonlinear spectroscopy of the high-temperature superconductors. It is shown that after fast heating of the superconducting sample the kinetics of the subsequent phase transition depends on the initial temperature T. The destruction of the stripe-structures at low overheating T* < T < T sub m approx = (1.4-1.5)T*, whereby T sub c and T* approx = T sub c are the temperatures of transition into the superconducting state and formation of the stripe-structures occurs slowly (the times above 10 sup - sup 9 s) in spite of practically instantaneous disappearance of the superconductivity

  15. Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jiangshan; Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Changchun 130022 (China)

    2006-05-21

    The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6- (1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq{sub 3}) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient ({gamma}) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

  16. Study of the Bulk Charge Carrier Dynamics in Anatase and Rutile TiO2 Single Crystals by Femtosecond Time Resolved Spectroscopy

    KAUST Repository

    Maity, Partha

    2018-04-02

    Understanding of the fundamentals behind charge carriers of photo-catalytic materials are still illusive hindering progress in our quest for renewable energy. TiO2 anatase and rutile are the most understood phases in photo-catalysis and serve as the best model for fundamental studies. Their ultrafast charge carrier dynamics especially on TiO2 anatase single crystal (the most active phase) are unresolved. Here femtosecond time resolved spectroscopy (TRS) was carried out to explore the dynamics of photo-excited charge carriers’ recombination in anatase single crystal, for the first time using pump fluence effects, and compares it to that of the rutile single crystal. A significant difference in charge carrier recombination rates between both crystals is observed. We found that the time constants for carrier recombination are two orders of magnitude slower for anatase (101) when compared to those of rutile (110). Moreover, bulk defects introduced by reduction of the samples via annealing in ultra-high vacuum resulted in faster recombination rates for both polymorphs. Both states (fresh and reduced) probed by pump fluence dependence measurements revealed that the major recombination channel in fresh and reduced anatase and reduced rutile is the first-order Shockley–Reed mediated. However, for fresh rutile, third-body Auger recombination was observed, attributed to the presence of higher density of intrinsic charge carriers. At all excitation wavelengths and fluence investigated, anatase (101) single crystal show longer charge carrier lifetime when compared to rutile (110) single. This may explain the superiority of the anatase phase for the electron transfer H+ reduction to molecular hydrogen.

  17. Regressed relations for forced convection heat transfer in a direct injection stratified charge rotary engine

    Science.gov (United States)

    Lee, Chi M.; Schock, Harold J.

    1988-01-01

    Currently, the heat transfer equation used in the rotary combustion engine (RCE) simulation model is taken from piston engine studies. These relations have been empirically developed by the experimental input coming from piston engines whose geometry differs considerably from that of the RCE. The objective of this work was to derive equations to estimate heat transfer coefficients in the combustion chamber of an RCE. This was accomplished by making detailed temperature and pressure measurements in a direct injection stratified charge (DISC) RCE under a range of conditions. For each specific measurement point, the local gas velocity was assumed equal to the local rotor tip speed. Local physical properties of the fluids were then calculated. Two types of correlation equations were derived and are described in this paper. The first correlation expresses the Nusselt number as a function of the Prandtl number, Reynolds number, and characteristic temperature ratio; the second correlation expresses the forced convection heat transfer coefficient as a function of fluid temperature, pressure and velocity.

  18. First principles analysis of the CDW instability of single-layer 1T-TiSe2 and its evolution with charge carrier density

    Science.gov (United States)

    Guster, Bogdan; Canadell, Enric; Pruneda, Miguel; Ordejón, Pablo

    2018-04-01

    We present a density functional theory study of the electronic structure of single-layer TiSe2, and focus on the charge density wave (CDW) instability present on this 2D material. We explain the 2× 2 periodicity of the CDW from the phonon band structure of the undistorted crystal, which is unstable under one of the phonon modes at the M point. This can be understood in terms of a partial band gap opening at the Fermi level, which we describe on the basis of the symmetry of the involved crystal orbitals, leading to an energy gain upon the displacement of the atoms following the phonon mode in a 2  ×  1 structure. Furthermore, the combination of the corresponding phonons for the three inequivalent M points of the Brillouin zone leads to the 2  ×  2 distortion characteristic of the CDW state. This leads to a further opening of a full gap, which reduces the energy of the 2  ×  2 structure compared to the 2  ×  1 one of a single M point phonon, and makes the CDW structure the most stable one. We also analyze the effect of charge injection into the layer on the structural instability. We predict that the 2  ×  2 structure only survives for a certain range of doping levels, both for electrons and for holes, as doping reduces the energy gain due to the gap opening. We predict the transition from the commensurate 2  ×  2 distortion to an incommensurate one with increasing wavelength upon increasing the doping level, followed by the appearance of the undistorted 1  ×  1 structure for larger carrier concentrations.

  19. Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes

    International Nuclear Information System (INIS)

    Barea, Eva M.; Garcia-Belmonte, Germa; Sommer, Michael; Huettner, Sven; Bolink, Henk J.; Thelakkat, Mukundan

    2010-01-01

    Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between ∼ 10 -8 and 10 -6 cm 2 V -1 s -1 are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given.

  20. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  1. Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

    Science.gov (United States)

    Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

    2016-02-01

    Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD.

  2. Interplay Between Side Chain Pattern, Polymer Aggregation, and Charge Carrier Dynamics in PBDTTPD:PCBM Bulk-Heterojunction Solar Cells

    KAUST Repository

    Dyer-Smith, Clare

    2015-05-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene–alt–thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors with linear side-chains yield bulk-heterojunction (BHJ) solar cell power conversion efficiencies (PCEs) of about 4% with phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, while a PBDTTPD polymer with a combination of branched and linear substituents yields a doubling of the PCE to 8%. Using transient optical spectroscopy it is shown that while the exciton dissociation and ultrafast charge generation steps are not strongly affected by the side chain modifications, the polymer with branched side chains exhibits a decreased rate of nongeminate recombination and a lower fraction of sub-nanosecond geminate recombination. In turn the yield of long-lived charge carriers increases, resulting in a 33% increase in short circuit current (J sc). In parallel, the two polymers show distinct grazing incidence X-ray scattering spectra indicative of the presence of stacks with different orientation patterns in optimized thin-film BHJ devices. Independent of the packing pattern the spectroscopic data also reveals the existence of polymer aggregates in the pristine polymer films as well as in both blends which trap excitons and hinder their dissociation.

  3. Kinetic Monte Carlo Modeling of Charge Carriers in Organic Electronic Devices: Suppression of the Self-Interaction Error

    KAUST Repository

    Li, Haoyuan

    2017-05-18

    Kinetic Monte Carlo (KMC) simulations have emerged as an important tool to help improve the efficiency of organic electronic devices by providing a better understanding of their device physics. In the KMC simulation of an organic device, the reliability of the results depends critically on the accuracy of the chosen charge-transfer rates, which are themselves strongly influenced by the site-energy differences. These site-energy differences include components coming from the electrostatic forces present in the system, which are often evaluated through electric potentials described by the Poisson equation. Here we show that the charge-carrier self-interaction errors that appear when evaluating the site-energy differences can lead to unreliable simulation results. To eliminate these errors, we propose two approaches that are also found to reduce the impact of finite-size effects. As a consequence, reliable results can be obtained at reduced computational costs. The proposed methodologies can be extended to other device simulation techniques as well.

  4. Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes

    Energy Technology Data Exchange (ETDEWEB)

    Barea, Eva M. [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, 12071 Castello (Spain); Garcia-Belmonte, Germa, E-mail: garciag@uji.e [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, 12071 Castello (Spain); Sommer, Michael; Huettner, Sven [Applied Functional Polymers, Universitaet Bayreuth, 95440 Bayreuth (Germany); Bolink, Henk J. [Molecular Science Institute-Universitat de Valencia, Poligon La Coma s/n, 46980 Paterna, Valencia (Spain); Thelakkat, Mukundan, E-mail: mukundan.thelakkat@uni-bayreuth.d [Applied Functional Polymers, Universitaet Bayreuth, 95440 Bayreuth (Germany)

    2010-04-02

    Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between {approx} 10{sup -8} and 10{sup -6} cm{sup 2} V{sup -1} s{sup -1} are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given.

  5. Effect of trapping of charge carriers on the resolution of Ge(Li) detectors

    International Nuclear Information System (INIS)

    Venturini, Luzia

    1979-01-01

    In this work a measurement is described of the variation of the resolution of a Ge(Li) detector as a function of the position of irradiation of a collimated gamma-ray beam. Also the variation of the resolution has been measured as a function of the applied detector voltage, using a collimated and a non-collimated gamma-ray beam. The measurement indicate that in the process of charge collection loss of holes predominates and the best resolution is obtained in the middle of the compensated region. It has been verified that, in the case of a collimated gamma beam the detector resolution improves with increasing detector bias up to at least 5100 Volts. For a non-collimated gamma beam, however, the resolution reaches a constant value at about 4400 Volts. The dependence of resolution on the position of irradiation can be accounted for by introducing a local ionization factor different from the usual position independent Fano factor. (author)

  6. Shape-Tunable Charge Carrier Dynamics at the Interfaces between Perovskite Nanocrystals and Molecular Acceptors

    KAUST Repository

    Ahmed, Ghada H.

    2016-09-19

    Hybrid organic/inorganic perovskites have recently emerged as an important class of materials and have exhibited remarkable performance in photovoltaics. To further improve their device efficiency, an insightful understanding of the interfacial charge transfer (CT) process is required. Here, we report the first direct experimental observation of the tremendous effect that the shape of perovskite nanocrystals (NCs) has on interfacial CT in the presence of a molecular acceptor. A dramatic change in CT dynamics at the interfaces of three different NC shapes, spheres, platelets, and cubes, is recorded. Our results clearly demonstrate that the mechanism of CT is significantly affected by the NC shape. More importantly, the results demonstrate that complexation on the NC surface acts as an additional driving force not only to tune the CT dynamics but also to control the reaction mechanism at the interface. This observation opens a new venue for further developing perovskite NCs-based applications.

  7. Shape-Tunable Charge Carrier Dynamics at the Interfaces between Perovskite Nanocrystals and Molecular Acceptors

    KAUST Repository

    Ahmed, Ghada H.; Liu, Jiakai; Parida, Manas R.; Banavoth, Murali; Bose, Riya; AlYami, Noktan; Hedhili, Mohamed N.; Peng, Wei; Pan, Jun; Besong, Tabot M.D.; Bakr, Osman; Mohammed, Omar F.

    2016-01-01

    Hybrid organic/inorganic perovskites have recently emerged as an important class of materials and have exhibited remarkable performance in photovoltaics. To further improve their device efficiency, an insightful understanding of the interfacial charge transfer (CT) process is required. Here, we report the first direct experimental observation of the tremendous effect that the shape of perovskite nanocrystals (NCs) has on interfacial CT in the presence of a molecular acceptor. A dramatic change in CT dynamics at the interfaces of three different NC shapes, spheres, platelets, and cubes, is recorded. Our results clearly demonstrate that the mechanism of CT is significantly affected by the NC shape. More importantly, the results demonstrate that complexation on the NC surface acts as an additional driving force not only to tune the CT dynamics but also to control the reaction mechanism at the interface. This observation opens a new venue for further developing perovskite NCs-based applications.

  8. Treatment of H0 and H- beams spilled at the stripper foil at full energy charge-exchange injection scheme

    International Nuclear Information System (INIS)

    Yamane, Isao

    1991-01-01

    The charge-exchange injection into a synchrotron to generate high-intensity pulsed proton beams for a spallation neutron source is reviewed while focusing on the treatment of H 0 and H - beams spilled at the stripper foil. After charge-exchange injection is briefly outlined, scattering by foil atoms and causes to spill H 0 and H - beams are described. These spilled beams can amount to several μA and should be carefully treated. It is then shown that a direct H - injection system needs to be considerably long and requires a very long straight section. Because of its simplicity, two-step H 0 injection has very wide applicability to various types of rings. However, it has a problem of emittance growth due to angular divergence in the stripper magnet and an ionoptical mismatch at the stripper foil. These problems are discussed, including a new proposal for a measure to remedy this problem. The laser photoionization injection is also briefly mentioned. (author)

  9. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  10. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  11. Theoretical models of the spin-dependent charge-carrier dynamics in metals and semiconductors

    International Nuclear Information System (INIS)

    Krauss, Michael

    2010-01-01

    This thesis is concerned with spin-dependent carrier dynamics in semiconductors and metals. We are especially interested in the dynamics on ultrashort timescales, which can be driven by ultrashort optical excitation, and use of a theoretical description in terms of the dynamical spin-density matrix. The first part of this thesis is concerned with spin-dependent carrier dynamics in bulk GaAs. For conduction electrons in GaAs, the most important mechanisms, by which an electron spin polarization can be destroyed, are the Dyakonov-Perel and Bir-Aronov-Pikus mechanisms. For the Dyakonov-Perel effect, our treatment is the first calculation of the dynamics of the spindensity matrix for bulk GaAs. From our microsopic calculation, we extract spin-dephasing times. In particular, we can describe the dependence of the spin-dephasing time for a wide range of n-doping concentrations and explain the spin-dephasing dynamics in and out of the motional-narrowing regime. For the Bir-Aronov-Pikus mechanism, i.e., the exchange interaction of electronics with holes, approximate relaxation times for limiting cases were derived about 30 years ago. We show that these approaches provide an incomplete picture of spin relaxation, and are only valid for high or low densities, whereas the microscopic calculation is capable of explaining the electronic dynamics also for intermediate doping densities, which are most interesting for typical experiments. The spin-dependent hole dynamics in GaAs is much faster than that of electrons, because the p-like hole bands experience the spin-orbit interaction directly, rather than through the interaction with other bands. The resulting spin relaxation is sometimes referred to as an Elliott-Yafet mechanism. For the first time, we present results for the microscopic dynamics of this mechanism for holes in bulk GaAs, and we discuss the different results that may be obtained with different measurement techniques. We also analyze the importance of ''spin hot

  12. Effects of GC temperature and carrier gas flow rate on on-line oxygen isotope measurement as studied by on-column CO injection.

    Science.gov (United States)

    Chen, Zhi-Gang; Yin, Xi-Jie; Zhou, Youping

    2015-08-01

    Although deemed important to δ 18 O measurement by on-line high-temperature conversion techniques, how the GC conditions affect δ 18 O measurement is rarely examined adequately. We therefore directly injected different volumes of CO or CO-N 2 mix onto the GC column by a six-port valve and examined the CO yield, CO peak shape, CO-N 2 separation, and δ 18 O value under different GC temperatures and carrier gas flow rates. The results show the CO peak area decreases when the carrier gas flow rate increases. The GC temperature has no effect on peak area. The peak width increases with the increase of CO injection volume but decreases with the increase of GC temperature and carrier gas flow rate. The peak intensity increases with the increase of GC temperature and CO injection volume but decreases with the increase of carrier gas flow rate. The peak separation time between N 2 and CO decreases with an increase of GC temperature and carrier gas flow rate. δ 18 O value decreases with the increase of CO injection volume (when half m/z 28 intensity is rate. On average, the δ 18 O value of the injected CO is about 1‰ higher than that of identical reference CO. The δ 18 O distribution pattern of the injected CO is probably a combined result of ion source nonlinearity and preferential loss of C 16 O or oxygen isotopic exchange between zeolite and CO. For practical application, a lower carrier gas flow rate is therefore recommended as it has the combined advantages of higher CO yield, better N 2 -CO separation, lower He consumption, and insignificant effect on δ 18 O value, while a higher-than-60 °C GC temperature and a larger-than-100 µl CO volume is also recommended. When no N 2 peak is expected, a higher GC temperature is recommended, and vice versa. Copyright © 2015 John Wiley & Sons, Ltd. Copyright © 2015 John Wiley & Sons, Ltd.

  13. High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

    Science.gov (United States)

    Button, Steven W.; Mativetsky, Jeffrey M.

    2017-08-01

    Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

  14. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan; Bertoluzzi, Luca; Gonzalez-Pedro, Victoria; Gimenez, Sixto; Fabregat-Santiago, Francisco; Kemp, Kyle W.; Sargent, Edward H.; Bisquert, Juan

    2013-01-01

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  15. Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory

    International Nuclear Information System (INIS)

    Zhao Junhui; Thomson, Douglas J; Freund, Michael S; Pilapil, Matt; Pillai, Rajesh G; Aminur Rahman, G M

    2010-01-01

    Dynamic resistive memory devices based on a conjugated polymer composite (PPy 0 DBS - Li + (PPy: polypyrrole; DBS - : dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

  16. Selective contacts drive charge extraction in quantum dot solids via asymmetry in carrier transfer kinetics

    KAUST Repository

    Mora-Sero, Ivan

    2013-08-12

    Colloidal quantum dot solar cells achieve spectrally selective optical absorption in a thin layer of solution-processed, size-effect tuned, nanoparticles. The best devices built to date have relied heavily on drift-based transport due to the action of an electric field in a depletion region that extends throughout the thickness of the quantum dot layer. Here we study for the first time the behaviour of the best-performing class of colloidal quantum dot films in the absence of an electric field, by screening using an electrolyte. We find that the action of selective contacts on photovoltage sign and amplitude can be retained, implying that the contacts operate by kinetic preferences of charge transfer for either electrons or holes. We develop a theoretical model to explain these experimental findings. The work is the first to present a switch in the photovoltage in colloidal quantum dot solar cells by purposefully formed selective contacts, opening the way to new strategies in the engineering of colloidal quantum dot solar cells. © 2013 Macmillan Publishers Limited. All rights reserved.

  17. Improved film morphology reduces charge carrier recombination into the triplet excited state in a small bandgap polymer-fullerene photovoltaic cell

    NARCIS (Netherlands)

    Di Nuzzo, D.; Aguirre de Miguel, A.; Shahid, M.; Gevaerts, Veronique; Meskers, S.C.J.; Janssen, R.A.J.

    2010-01-01

    The use of diiodooctane as processing additive for construction of PCPDTBT:PCBM solar cells results in a profound change in photophysical behavior of this blend. In the improved morphology obtained with the additive, recombination of charge carriers to the lowest triplet excited state is suppressed.

  18. Insights into the charge carrier terahertz mobility in polyfluorenes from large-scale atomistic simulations and time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Vukmirović, N.; Ponseca, C.S.; Němec, Hynek; Yartsev, A.; Sundström, V.

    2012-01-01

    Roč. 116, č. 37 (2012), s. 19665-1972 ISSN 1932-7447 Institutional research plan: CEZ:AV0Z10100520 Keywords : charge carrier mobility * time-resolved terahertz spectroscopy * multiscale atomistic calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.814, year: 2012

  19. Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

    Directory of Open Access Journals (Sweden)

    I. Khanonkin

    2017-03-01

    Full Text Available The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the continuous wave probe shows interesting dynamical processes during the initial 2-3 ps after the pump pulse, when carriers originating from two photon absorption contribute the least to the recovery. The effects of optical excitations and electrical bias levels on the recovery dynamics of the gain in energetically different QDs are quantified and discussed. The experimental observations are validated qualitatively using a comprehensive finite-difference time-domain model by recording the time evolution of the charge carriers in the QDs ensemble following the pulse.

  20. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    International Nuclear Information System (INIS)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-01-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20–25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p + implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO 2 interface charge densities ( Q f ) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p + implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q f , that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  1. Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

    Science.gov (United States)

    Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

    2017-09-01

    Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p+ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Qf) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p+ implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Qf, that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

  2. Charge carrier transport mechanisms in perovskite CdTiO3 fibers

    Directory of Open Access Journals (Sweden)

    Z. Imran

    2014-06-01

    Full Text Available Electrical transport properties of electrospun cadmium titanate (CdTiO3 fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC with traps at higher voltages at all temperatures (200 K – 420 K. Trap density in our fibers system is Nt = 6.27 × 1017 /cm3. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH from 200 K – 300 K. The localized density of states were found to be N(EF = 5.51 × 1021 eV−1 cm−3 at 2 V. Other VRH parameters such as hopping distance (Rhop and hopping energy (Whop were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO3 fibers efficient material for capacitive energy storage devices.

  3. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires

    Science.gov (United States)

    Kaveh Baghbadorani, Masoud

    In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in 150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and time resolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium-silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs core shell NWs of 130 nm diameter. Plasmonic NWs with Au

  4. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  5. Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer

    Science.gov (United States)

    Fan, Ching-Lin; Lin, Wei-Chun; Chen, Hao-Wei

    2018-06-01

    This work demonstrates pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a 6,13-pentacenequinone (PQ) carrier injection layer between the source/drain (S/D) metal Au electrodes and pentacene channel layer. Compared to devices without a PQ layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off current ratio were significantly improved for the device with a 5-nm-thick PQ interlayer. These improvements are attributed to significant reduction of hole barrier height at the Au/pentacene channel interfaces. Therefore, it is believed that using PQ as the carrier injection layer is a good candidate to improve the pentacene-based OTFTs electrical performance.

  6. Fault injection as a test method for an FPGA in charge of data readout for a large tracking detector

    CERN Document Server

    Roed, K; Richter, M; Fehlker, D; Helstrup, H; Alme, J; Ullaland, K

    2011-01-01

    This paper describes how fault injection has been implemented as a test method for an FPGA in an existing hardware configuration setup. As this FPGA is in charge of data readout for a large tracking detector, the reliability of this FPGA is of high importance. Due to the complexity of the readout electronics, irradiation testing is technically difficult at this stage of the system commissioning. The work presented in this paper is therefore motivated by introducing fault injection as an alternative method to characterize failures caused by SEUs. It is a method to study the effect that a configuration upset may have on the operation of the FPGA. The target platform consists of two independent modules for data acquisition and detector control functionality. Fault injection to test the response of the data acquisition module is made possible by implementing the solution as part of the detector control functionality. Correct implementation is validated by a simple shift register design. Our results demonstrate th...

  7. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Science.gov (United States)

    Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2014-08-01

    The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  8. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    Directory of Open Access Journals (Sweden)

    Christian Wehrenfennig

    2014-08-01

    Full Text Available The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3−xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL emission of vapor-deposited CH3NH3PbI3−xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  9. The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

    Directory of Open Access Journals (Sweden)

    Jingyu Shen

    2018-01-01

    Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

  10. Facile synthesis of bismuth oxyhalide nanosheet films with distinct conduction type and photo-induced charge carrier behavior

    Science.gov (United States)

    Jia, Huimin; He, Weiwei; Zhang, Beibei; Yao, Lei; Yang, Xiaokai; Zheng, Zhi

    2018-05-01

    A modified successive ionic layer adsorption and reaction (SILAR) method was developed to fabricate 2D ordered BiOX (X = CI, Br, I) nanosheet array films on FTO substrates at room temperature. The formation of BiOX films were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-vis absorption spectroscopy, and X-ray photoelectron spectroscopy (XPS). The semiconductor surface states determine the type of semiconductor. Although BiOCI, BiOBr and BiOI belong to the bismuth oxyhalide semiconductor family and possess similar crystal and electronic structures, they show different conductivity types due to their respective surface states. Mott-Schottky curve results demonstrate that the BiOCl and BiOI nanosheet arrays display n-type semiconductor properties, while the BiOBr films exhibit p-type semiconductor properties. Assisted by surface photovoltage (SPV) and transient photovoltage (TPV) techniques, the photoinduced charge transfer dynamics on the surface/interface of the BiOX/FTO nanosheet films were systematically and comparatively investigated. As revealed by the results, both the separation and transfer dynamics of the photo-induced carrier are influenced by film thickness.

  11. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.; Novikov, A. V.; Yurasov, D. V.; Shaleev, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-12-15

    For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15} layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.

  12. On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.

  13. High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

    2015-10-01

    We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

  14. Efficient charge-carrier extraction from Ag₂S quantum dots prepared by the SILAR method for utilization of multiple exciton generation.

    Science.gov (United States)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J

    2015-01-28

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.

  15. Dynamics of Interfacial Charge Transfer States and Carriers Separation in Dye-Sensitized Solar Cells: A Time-Resolved Terahertz Spectroscopy Study

    OpenAIRE

    Brauer, Jan C.; Marchioro, Arianna; Paraecattil, Arun A.; Oskouei, Ahmad A.; Moser, Jacques-E.

    2015-01-01

    Electron injection from a photoexcited molecular sensitizer into a wide-bandgap semiconductor is the primary step toward charge separation in dye-sensitized solar cells (DSSCs). According to the current understanding of DSSCs functioning mechanism, charges are separated directly during this primary electron transfer process, yielding hot conduction band electrons in the semiconductor and positive holes localized on oxidized dye molecules at the surface. Comparing results of ultrafast transien...

  16. Charge exchange measurements of MHD activity during neutral beam injection in the Princeton Large Torus and the Poloidal Divertor Experiment

    International Nuclear Information System (INIS)

    Goldston, R.J.; Kaita, R.; Beiersdorfer, P.; Gammel, G.; Herndon, D.L.; McCune, D.C.; Meyerhofer, D.D.

    1987-01-01

    The horizontally scanning, multi-angle charge exchange analysers on the Princeton Large Torus (PLT) and the Poloidal Divertor Experiment (PDX) were used to study the effects of MHD activity on the background ion distribution function and on the beam ion slowing-down process during high power neutral injection. Sawtooth oscillations were observed in the fast ion flux on PLT and PDX, and measurements with neutral beams providing local neutral density enhancement indicated that the ions were transported radially when these events occurred. With near-perpendicular injection in PDX, at the lower toroidal fields necessary to maximize the plasma beta, repetitive bursts of greatly enhanced charge exchange flux were observed. These were associated with the 'fishbone' MHD instability, and a substantial depletion of the perpendicular slowing-down spectrum below the injection energy was seen. A simple phenomenological model for this loss mechanism was developed, and its use in simulation codes has been successful in providing good agreement with the experimental data. The behaviour and characteristics of this model are well matched by direct theoretical calculations. (author)

  17. Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

    2015-10-15

    The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

  18. A possibility for generation of two species of charge carriers along main-chain and side-chains for a π-conjugated polymer

    International Nuclear Information System (INIS)

    Kudo, Yuki; Kawabata, Kohsuke; Goto, Hiromasa

    2013-01-01

    Iodide doping produces charge carriers in π-conjugated polymers. Solitons can be generated in the case of polyacetylene, and polarons in the case of aromatic-type conjugated polymers. We synthesized a conjugated main-chain/side-chain polymer, which consists of polyene in the main-chain and aromatic-type conjugated units in the side-chains. Based on the SSH (Su, Schrieffer, Heeger) theoretical model of solitons in one-dimensional conjugated polymers, we experimentally carried out chemical doping to the main-chain/side-chains conjugated polymer. Generation of the charge carriers was examined by electron spin resonance spectroscopy. This study may lead to realization of a dual doping system of solitons and polarons in π-conjugation expanded to two-dimensional directions in polymers.

  19. Performance and efficiency evaluation and heat release study of a direct-injection stratified-charge rotary engine

    Science.gov (United States)

    Nguyen, H. L.; Addy, H. E.; Bond, T. H.; Lee, C. M.; Chun, K. S.

    1987-01-01

    A computer simulation which models engine performance of the Direct Injection Stratified Charge (DISC) rotary engines was used to study the effect of variations in engine design and operating parameters on engine performance and efficiency of an Outboard Marine Corporation (OMC) experimental rotary combustion engine. Engine pressure data were used in a heat release analysis to study the effects of heat transfer, leakage, and crevice flows. Predicted engine data were compared with experimental test data over a range of engine speeds and loads. An examination of methods to improve the performance of the rotary engine using advanced heat engine concepts such as faster combustion, reduced leakage, and turbocharging is also presented.

  20. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Yokoyama, Masaaki [Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Seki, Shu, E-mail: seki@chem.eng.osaka-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Kaneka Fundamental Technology Research Alliance Laboratories, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan)

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  1. Efficient charge carriers induced by extra outer-shell electrons in iron-pnictides: a comparison between Ni- and Co-doped CaFeAsF

    International Nuclear Information System (INIS)

    Zhang Min; Yu Yi; Tan Shun; Zhang Yuheng; Zhang Changjin; Zhang Lei; Qu Zhe; Ling Langsheng; Xi, Chuanying

    2010-01-01

    A comprehensive study of the difference between CaFe 1-x Ni x AsF and CaFe 1-x Co x AsF systems has been carried out by measuring the efficient charge carrier concentration, the valence states and the superconducting phase diagram. It is found that at the same doping level, Ni doping introduces nearly twice the number of charge carriers as Co doping. However, x-ray absorption near-edge spectroscopy measurements reveal that the valence state of Fe in both systems is close to 2, indicating that there is no valence mismatch. We suggest that the charge carriers in CaFe 1-x M x AsF (M=transition metal elements) are not induced by valence mismatch but come from the difference in the number of outer-shell electrons. We also suggest that with Ni and Co doping, the systems change from a multi-band material in the underdoped regions to a single-band state in the overdoped regions.

  2. Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

    Science.gov (United States)

    Bhaumik, Saikat; Pal, Amlan J

    2014-07-23

    We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

  3. Three-dimensional modeling of charge transport, injection and recombination in organic light-emitting diodes

    NARCIS (Netherlands)

    Holst, van der J.J.M.

    2010-01-01

    Organic light-emitting diodes (OLEDs) are ideally suited for lighting and display applications. Commercial OLED displays as well as OLED white-light sources are presently being introduced to the market. Essential electronic processes in OLEDs are the injection of electrons and holes into an organic

  4. Silver nanoparticles as a key feature of a plasma polymer composite layer in mitigation of charge injection into polyethylene under dc stress

    International Nuclear Information System (INIS)

    Milliere, L; Makasheva, K; Laurent, C; Despax, B; Boudou, L; Teyssedre, G

    2016-01-01

    The aim of this work is to limit charge injection from a semi-conducting electrode into low density polyethylene (LDPE) under dc field by tailoring the polymer surface using a silver nanoparticles-containing layer. The layer is composed of a plane of silver nanoparticles embedded in a semi-insulating organosilicon matrix deposited on the polyethylene surface by a plasma process. Size, density and surface coverage of the nanoparticles are controlled through the plasma process. Space charge distribution in 300 μm thick LDPE samples is measured by the pulsed-electroacoustic technique following a short term (step-wise voltage increase up to 50 kV mm −1 , 20 min in duration each, followed by a polarity inversion) and a longer term (up to 12 h under 40 kV mm −1 ) protocols for voltage application. A comparative study of space charge distribution between a reference polyethylene sample and the tailored samples is presented. It is shown that the barrier effect depends on the size distribution and the surface area covered by the nanoparticles: 15 nm (average size) silver nanoparticles with a high surface density but still not percolating form an efficient barrier layer that suppress charge injection. It is worthy to note that charge injection is detected for samples tailored with (i) percolating nanoparticles embedded in organosilicon layer; (ii) with organosilicon layer only, without nanoparticles and (iii) with smaller size silver particles (<10 nm) embedded in organosilicon layer. The amount of injected charges in the tailored samples increases gradually in the samples ranking given above. The mechanism of charge injection mitigation is discussed on the basis of complementary experiments carried out on the nanocomposite layer such as surface potential measurements. The ability of silver clusters to stabilize electrical charges close to the electrode thereby counterbalancing the applied field appears to be a key factor in explaining the charge injection

  5. The impact of Au doping on the charge carrier dynamics at the interfaces between cationic porphyrin and silver nanoclusters

    KAUST Repository

    Almansaf, Abdulkhaleq A.

    2017-02-04

    We explore the impact of Au doping on the charge transfer dynamics between the positively charged porphyrin (TMPyP) and negatively charged silver nanoclusters (Ag29 NCs). Our transient absorption (TA) spectroscopic results demonstrate that the interfacial charge transfer, the intersystem crossing and the triplet state lifetime of porphyrin can be tuned by the doping of Au atoms in Ag29 NCs. Additionally, we found that the electrostatic interaction between the negative charge of the cluster and the positive charge on the TMPyP is the driving force that brings them close to each other for complex formation and subsequently facilitates the transfer process.

  6. The impact of Au doping on the charge carrier dynamics at the interfaces between cationic porphyrin and silver nanoclusters

    KAUST Repository

    Almansaf, Abdulkhaleq A.; Parida, Manas R.; Besong, Tabot M.D.; Maity, Partha; Bootharaju, Megalamane Siddaramappa; Bakr, Osman; Mohammed, Omar F.

    2017-01-01

    We explore the impact of Au doping on the charge transfer dynamics between the positively charged porphyrin (TMPyP) and negatively charged silver nanoclusters (Ag29 NCs). Our transient absorption (TA) spectroscopic results demonstrate that the interfacial charge transfer, the intersystem crossing and the triplet state lifetime of porphyrin can be tuned by the doping of Au atoms in Ag29 NCs. Additionally, we found that the electrostatic interaction between the negative charge of the cluster and the positive charge on the TMPyP is the driving force that brings them close to each other for complex formation and subsequently facilitates the transfer process.

  7. Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401-3305 (United States)

    2015-05-14

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  8. Mobility of charge carriers in electron-irradiated crystals of n-type Hg0.8Cd0.2Te

    International Nuclear Information System (INIS)

    Voitsekhovskii, A.V.; Kiryushkin, E.M.; Kokhanenko, A.P.; Kurbanov, K.R.; Lilenko, Yu.V.

    1988-01-01

    We present the results of an investigation of the behavior of the mobility of the charge carriers in Hg 1-x Cd x Te crystals with n-type conduction as a function of the dose of irradiation by electrons with an energy of 3.0 MeV at 300 K and the initial content of defects in the material. The complex character of the variation of the mobility of the electrons as a function of the dose observed when crystals of n-Hg 1-x Cd x Te (x ∼ 0.20) with different initial concentrations of defects are irradiated by fast electrons has been attributed to the influence of the factors of the shielding of the ionized scattering centers by electrons and the additional scattering of the charge carriers on the radiation defects. Good agreement between the experimental and calculated plots of the dependence of the mobility of electrons on the irradiation dose has been obtained with consideration of a model of the simultaneous introduction of donor (single charged) and acceptor (doubly charged) defects into a narrow-band semiconductor characterized by a degenerate and nonparabolic conduction band

  9. Surface characterisation and functionalisation of indium tin oxide anodes for improvement of charge injection in organic light emitting diodes

    International Nuclear Information System (INIS)

    Davenas, J.; Besbes, S.; Abderrahmen, A.; Jaffrezic, N.; Ben Ouada, H.

    2008-01-01

    Wettability studies have been performed to probe the surface properties of ITO substrates, aimed to be used as hole injecting electrode in OLEDs. The elimination of organic contaminants upon the cleaning treatment (ultrasonic bath in organic solvents) leads to an increase of the free energy of the ITO surface becoming hydrophilic. The surface energy components calculated from the Van Oss model show the appearance of a basic component upon the cleaning treatment. A thermal treatment at 100 deg. C for 3 h leads to a decrease of the surface free energy due to surface dehydration. These properties are attributed to the hydroxides formed at the ITO surface inducing improved adhesion at the ITO/polymer interface. The ITO surfaces have been functionalised with a chloroethylphosphonic acid mono-layer to increase their stability. The appearance of an acid-base component leads to a dipolar character of the ITO surface. The formation of a compact layer of a spin coated poly(phenylenevinylene) derivative induces the shielding of the ITO basic character. The weakening of the near infrared absorption associated to ITO free carriers confirms the formation of a dipole layer at the interface with the molecular layer in contact with ITO. Improved injection properties, shown by the current/voltage characteristics, result from the interface modifications

  10. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  11. Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

    Science.gov (United States)

    Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

    2018-04-01

    Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

  12. Effect of turbo charging and steam injection methods on the performance of a Miller cycle diesel engine (MCDE)

    International Nuclear Information System (INIS)

    Gonca, Guven; Sahin, Bahri

    2017-01-01

    Highlights: • Performance of a diesel engine is simulated by finite time thermodynamics. • Effect of steam injection on performance of a Miller cycle engine is examined. • Model results are verified with the experimental data with less than 7% error. - Abstract: In this study, application of the steam injection method (SIM), Miller cycle (MC) and turbo charging (TC) techniques into a four stroke, direct-injection diesel engine has been numerically and empirically conducted. NOx emissions have detrimental influences on the environment and living beings. They are formed at the high temperatures, thus the Diesel engines are serious NOx generation sources since they have higher compression ratios and higher combustion temperatures. The international regulations have decreased the emission limits due to environmental reasons. The Miller cycle (MC) application and steam injection method (SIM) have been popular to abate NOx produced from the internal combustion engines (ICEs), in the recent years. However, the MC application can cause a reduction in power output. The most known technique which maximizes the engine power and abates exhaust emissions is TC. Therefore, if these three techniques are combined, the power loss can be tolerated and pollutant emissions can be minimized. While the application of the MC and SIM causes to diminish in the brake power and brake thermal efficiency of the engine up to 6.5% and 10%, the TC increases the brake power and brake thermal efficiency of the engine up to 18% and 12%. The experimental and theoretical results have been compared in terms of the torque, the specific fuel consumption (SFC), the brake power and the brake thermal efficiency. The results acquired from theoretical modeling have been validated with empirical data with less than 7% maximum error. The results showed that developed combination can increase the engine performance and the method can be easily applied to the Diesel engines.

  13. About methods to reduce emissions of turbo charged engine gasoline direct injection

    Science.gov (United States)

    Neacsu, D.; Ivan, F.; Niculae, M.

    2017-08-01

    The paper aims to analyse and explain new methods applied on gasoline direct injection to reduce gas emissions and greenhouse effect. There are analysed the composition of emission inside the engine and which are the most harmful emission for the environment. Will be analysed the methods and systems which have a contribution to decrease emissions produced by the mixture of air and fuel. The paper contains details about after treatment systems which are designed to decrease gas emissions without any other negative consequence on the environment.

  14. Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride.

    Science.gov (United States)

    He, Daowei; Qiao, Jingsi; Zhang, Linglong; Wang, Junya; Lan, Tu; Qian, Jun; Li, Yun; Shi, Yi; Chai, Yang; Lan, Wei; Ono, Luis K; Qi, Yabing; Xu, Jian-Bin; Ji, Wei; Wang, Xinran

    2017-09-01

    Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2- b ][1]benzothiophene (C 8 -BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm 2 /Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C 8 -BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.

  15. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    International Nuclear Information System (INIS)

    Teyssedre, G.; Laurent, C.; Vu, T. T. N.

    2015-01-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10 −14 –10 −13  m 2  V −1  s −1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets

  16. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Science.gov (United States)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  17. Emission Characteristics for a Homogeneous Charged Compression Ignition Diesel Engine with Exhaust Gas Recirculation Using Split Injection Methodology

    Directory of Open Access Journals (Sweden)

    Changhee Lee

    2017-12-01

    Full Text Available Due to the serious issues caused by air pollution and global warming, emission regulations are becoming stricter. New technologies that reduce NOx and PM emissions are needed. To cope with these social exhaust gas regulation demands, many advanced countries are striving to develop eco-friendly vehicles in order to respond to stricter emissions regulations. The homogeneous charged compression ignition engine (HCCI incorporates a multi-stage combustion engine with multiple combustion modes, catalyst, direct fuel injection and partial mixing combustion. In this study, the HCCI combustion was applied to analyze and review the results of engines applying HCCI combustion without altering the conventional engine specifications. The optimization of exhaust gas recirculation (EGR and compression ratio changes provides an optimal fuel economy. In this study, potential for optimum economy within the range of IMEP 0.8 MPa has been evaluated.

  18. Artificially injected charged particles as a tool for the measurement of the electric field in the magnetosphere

    International Nuclear Information System (INIS)

    Pirre, M.

    1982-01-01

    Two methods of measuring the parallel electric field in the magnetosphere using artificially injected charged particles are discussed. One method uses electrons to measure the parallel electric field in the vicinity of the spacecraft. It is shown that a very good accuracy can be achieved for such a measurement. The principle of this method is briefly reviewed, the minimum theoretical value measurable by the method is shown, and the limitations on it due to the spacecraft environment are discussed. Most important among the latter is the high level of turbulence about the spacecraft. The second method uses ions to measure the electric potential along the magnetic field lines if the associated parallel electric field is directed downward. For such a field at a lower altitude, Li ions are used to maximize the returning fluxes and to increase the probability of detection. Rockets are more suitable than satellites to make such measurements. 17 references

  19. Charge Transport in LDPE Nanocomposites Part II—Computational Approach

    Directory of Open Access Journals (Sweden)

    Anh T. Hoang

    2016-03-01

    Full Text Available A bipolar charge transport model is employed to investigate the remarkable reduction in dc conductivity of low-density polyethylene (LDPE based material filled with uncoated nanofillers (reported in the first part of this work. The effect of temperature on charge transport is considered and the model outcomes are compared with measured conduction currents. The simulations reveal that the contribution of charge carrier recombination to the total transport process becomes more significant at elevated temperatures. Among the effects caused by the presence of nanoparticles, a reduced charge injection at electrodes has been found as the most essential one. Possible mechanisms for charge injection at different temperatures are therefore discussed.

  20. Tungsten-based nanomaterials (WO{sub 3} & Bi{sub 2}WO{sub 6}): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Girish Kumar, S., E-mail: girichem@yahoo.co.in; Koteswara Rao, K.S.R., E-mail: raoksrk@gmail.com

    2015-11-15

    Graphical abstract: - Highlights: • Photocatalytic applications of WO{sub 3} and Bi{sub 2}WO{sub 6} based nanomaterial are reviewed. • Modifications to improve their performance are highlighted. • Charge carrier generation–separation–recombination is discussed. • Challenges and future prospects in this area are addressed. - Abstract: Heterogeneous photocatalysis is an ideal green energy technology for the purification of wastewater. Although titania dominates as the reference photocatalyst, its wide band gap is a bottleneck for extended utility. Thus, search for non-TiO{sub 2} based nanomaterials has become an active area of research in recent years. In this regard, visible light absorbing polycrystalline WO{sub 3} (2.4–2.8 eV) and Bi{sub 2}WO{sub 6} (2.8 eV) with versatile structure-electronic properties has gained considerable interest to promote the photocatalytic reactions. These materials are also explored in selective functional group transformation in organic reactions, because of low reduction and oxidation potential of WO{sub 3} CB and Bi{sub 2}WO{sub 6} VB, respectively. In this focused review, various strategies such as foreign ion doping, noble metal deposition and heterostructuring with other semiconductors designed for efficient photocatalysis is discussed. These modifications not only extend the optical response to longer wavelengths, but also prolong the life-time of the charge carriers and strengthen the photocatalyst stability. The changes in the surface-bulk properties and the charge carrier transfer dynamics associated with each modification correlating to the high activity are emphasized. The presence of oxidizing agents, surface modification with Cu{sup 2+} ions and synthesis of exposed facets to promote the degradation rate is highlighted. In depth study on these nanomaterials is likely to sustain interest in wastewater remediation and envisaged to signify in various green energy applications.

  1. Unraveling Unprecedented Charge Carrier Mobility through Structure Property Relationship of Four Isomers of Didodecyl[1]benzothieno[3,2-b][1]benzothiophene.

    Science.gov (United States)

    Tsutsui, Yusuke; Schweicher, Guillaume; Chattopadhyay, Basab; Sakurai, Tsuneaki; Arlin, Jean-Baptiste; Ruzié, Christian; Aliev, Almaz; Ciesielski, Artur; Colella, Silvia; Kennedy, Alan R; Lemaur, Vincent; Olivier, Yoann; Hadji, Rachid; Sanguinet, Lionel; Castet, Frédéric; Osella, Silvio; Dudenko, Dmytro; Beljonne, David; Cornil, Jérôme; Samorì, Paolo; Seki, Shu; Geerts, Yves H

    2016-09-01

    The structural and electronic properties of four isomers of didodecyl[1]-benzothieno[3,2-b][1]benzothiophene (C12-BTBT) have been investigated. Results show the strong impact of the molecular packing on charge carrier transport and electronic polarization properties. Field-induced time-resolved microwave conductivity measurements unravel an unprecedented high average interfacial mobility of 170 cm(2) V(-1) s(-1) for the 2,7-isomer, holding great promise for the field of organic electronics. © 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

    Science.gov (United States)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

    1976-01-01

    The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

  3. Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation

    CERN Document Server

    Garibov, A A; Agaev, T N

    1999-01-01

    The effect of the degree of order of SiO sub 2 on the localization process of non-equilibrium charge carriers (NCC) when exposed to gamma-quanta at 77 K has been investigated. It has been found that with decreasing SiO sub 2 structure degree of order, a localization probability of NCC increases. A contribution of surface defect states in SiO sub 2 to localization, migration and recombination annihilation processes of NCC induced by ionizing radiation has been determined.

  4. Experimental study of combustion and emission characteristics of ethanol fuelled port injected homogeneous charge compression ignition (HCCI) combustion engine

    Energy Technology Data Exchange (ETDEWEB)

    Maurya, Rakesh Kumar; Agarwal, Avinash Kumar [Engine Research Laboratory, Department of Mechanical Engineering, Indian Institute of Technology Kanpur, Kanpur 208 016 (India)

    2011-04-15

    The homogeneous charge compression ignition (HCCI) is an alternative combustion concept for in reciprocating engines. The HCCI combustion engine offers significant benefits in terms of its high efficiency and ultra low emissions. In this investigation, port injection technique is used for preparing homogeneous charge. The combustion and emission characteristics of a HCCI engine fuelled with ethanol were investigated on a modified two-cylinder, four-stroke engine. The experiment is conducted with varying intake air temperature (120-150 C) and at different air-fuel ratios, for which stable HCCI combustion is achieved. In-cylinder pressure, heat release analysis and exhaust emission measurements were employed for combustion diagnostics. In this study, effect of intake air temperature on combustion parameters, thermal efficiency, combustion efficiency and emissions in HCCI combustion engine is analyzed and discussed in detail. The experimental results indicate that the air-fuel ratio and intake air temperature have significant effect on the maximum in-cylinder pressure and its position, gas exchange efficiency, thermal efficiency, combustion efficiency, maximum rate of pressure rise and the heat release rate. Results show that for all stable operation points, NO{sub x} emissions are lower than 10 ppm however HC and CO emissions are higher. (author)

  5. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    Science.gov (United States)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  6. Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

    International Nuclear Information System (INIS)

    Lee, E.H.; Mansur, L.K.; Yoo, M.H.

    1979-01-01

    Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

  7. Investigation on transient flow of a centrifugal charging pump in the process of high pressure safety injection

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fan, E-mail: zhangfan4060@gmail.com; Yuan, Shouqi; Fu, Qiang; Tao, Yi

    2015-11-15

    Highlights: • The transient flow characteristics of the charging pump with the first stage impeller in the HPSI process have been investigated numerically by CFD. • The hydraulic performance of the charging pump during the HPSI are discussed, andthe absolute errors between the simulated and measured results are analyzed in the paper. • Pressure fluctuation in the impeller and flow pattern in the impeller were studied in the HPSI process. It is influenced little at the beginning of the HPSI process while fluctuates strongly in the end of the HPSI process. - Abstract: In order to investigate the transient flow characteristics of the centrifugal charging pump during the transient transition process of high pressure safety injection (HPSI) from Q = 148 m{sup 3}/h to Q = 160 m{sup 3}/h, numerical simulation and experiment are implemented in this study. The transient flow rate, which is the most important factor, is obtained from the experiment and works as the boundary condition to accurately accomplish the numerical simulation in the transient process. Internal characteristics under the variable operating conditions are analyzed through the transient simulation. The results shows that the absolute error between the simulated and measured heads is less than 2.26% and the absolute error between the simulated and measured efficiency is less than 2.04%. Pressure fluctuation in the impeller is less influenced by variable flow rate in the HPSI process, while flow pattern in the impeller is getting better and better with the flow rate increasing. As flow rate increases, fluid blocks on the tongue of the volute and it strikes in this area at large flow rate. Correspondingly, the pressure fluctuation is intense and vortex occurs gradually during this period, which obviously lowers the efficiency of the pump. The contents of the current work can provide references for the design optimization and fluid control of the pump used in the transient process of variable operating

  8. Investigation on transient flow of a centrifugal charging pump in the process of high pressure safety injection

    International Nuclear Information System (INIS)

    Zhang, Fan; Yuan, Shouqi; Fu, Qiang; Tao, Yi

    2015-01-01

    Highlights: • The transient flow characteristics of the charging pump with the first stage impeller in the HPSI process have been investigated numerically by CFD. • The hydraulic performance of the charging pump during the HPSI are discussed, andthe absolute errors between the simulated and measured results are analyzed in the paper. • Pressure fluctuation in the impeller and flow pattern in the impeller were studied in the HPSI process. It is influenced little at the beginning of the HPSI process while fluctuates strongly in the end of the HPSI process. - Abstract: In order to investigate the transient flow characteristics of the centrifugal charging pump during the transient transition process of high pressure safety injection (HPSI) from Q = 148 m"3/h to Q = 160 m"3/h, numerical simulation and experiment are implemented in this study. The transient flow rate, which is the most important factor, is obtained from the experiment and works as the boundary condition to accurately accomplish the numerical simulation in the transient process. Internal characteristics under the variable operating conditions are analyzed through the transient simulation. The results shows that the absolute error between the simulated and measured heads is less than 2.26% and the absolute error between the simulated and measured efficiency is less than 2.04%. Pressure fluctuation in the impeller is less influenced by variable flow rate in the HPSI process, while flow pattern in the impeller is getting better and better with the flow rate increasing. As flow rate increases, fluid blocks on the tongue of the volute and it strikes in this area at large flow rate. Correspondingly, the pressure fluctuation is intense and vortex occurs gradually during this period, which obviously lowers the efficiency of the pump. The contents of the current work can provide references for the design optimization and fluid control of the pump used in the transient process of variable operating conditions.

  9. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil

    2016-01-01

    absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

  10. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    Energy Technology Data Exchange (ETDEWEB)

    Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, LAPLACE, F-31062 Toulouse (France); Vu, T. T. N. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse cedex 9 (France); Electric Power University, 235 Hoang Quoc Viet, 10000 Hanoi (Viet Nam)

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  11. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  12. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    International Nuclear Information System (INIS)

    Mehnke, Frank; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-01-01

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al x Ga 1−x N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al 0.7 Ga 0.3 N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA

  13. In vivo demonstration of injectable microstimulators based on charge-balanced rectification of epidermically applied currents

    Science.gov (United States)

    Ivorra, Antoni; Becerra-Fajardo, Laura; Castellví, Quim

    2015-12-01

    Objective. It is possible to develop implantable microstimulators whose actuation principle is based on rectification of high-frequency (HF) current bursts supplied through skin electrodes. This has been demonstrated previously by means of devices consisting of a single diode. However, previous single diode devices caused dc currents which made them impractical for clinical applications. Here flexible thread-like stimulation implants which perform charge balance are demonstrated in vivo. Approach. The implants weigh 40.5 mg and they consist of a 3 cm long tubular silicone body with a diameter of 1 mm, two electrodes at opposite ends, and, within the central section of the body, an electronic circuit made up of a diode, two capacitors, and a resistor. In the present study, each implant was percutaneously introduced through a 14 G catheter into either the gastrocnemius muscle or the cranial tibial muscle of a rabbit hindlimb. Then stimulation was performed by delivering HF bursts (amplitude pair of textile electrodes strapped around the hindlimb and either isometric plantarflexion or dorsiflexion forces were recorded. Stimulation was also assayed 1, 2 and 4 weeks after implantation. Main results. The implants produced bursts of rectified current whose mean value was of a few mA and were capable of causing local neuromuscular stimulation. The implants were well-tolerated during the 4 weeks. Significance. Existing power supply methods, and, in particular inductive links, comprise stiff and bulky parts. This hinders the development of minimally invasive implantable devices for neuroprostheses based on electrical stimulation. The proposed methodology is intended to relieving such bottleneck. In terms of mass, thinness, and flexibility, the demonstrated implants appear to be unprecedented among the intramuscular stimulation implants ever assayed in vertebrates.

  14. Light absorption in thin quantizing semiconductor wires with non-parabolic law of dispersion of charge carriers

    International Nuclear Information System (INIS)

    Djotian, A.P.; Kazarian, E.M.; Karakashinian, Y.V.

    1993-01-01

    Interband absorption of light in a quantizing wire with non-parabolic dispersion law of charge carries, as well as energy spectrum and state densities are studied. The effect of Coulomb interaction between particles on the spectral curve of interband absorption is considered. Non-parabolic dispersion law of charge carries leads to an essential displacement of absorption line to ground state of one-dimensional exciton. 7 refs

  15. Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-doping.

    Science.gov (United States)

    Li, Min; Zhang, Junying; Dang, Wenqiang; Cushing, Scott K; Guo, Dong; Wu, Nianqiang; Yin, Penggang

    2013-10-14

    The correlation of the electronic band structure with the photocatalytic activity of AgTaO3 has been studied by simulation and experiments. Doping wide band gap oxide semiconductors usually introduces discrete mid-gap states, which extends the light absorption but has limited benefit for photocatalytic activity. Density functional theory (DFT) calculations show that compensated co-doping in AgTaO3 can overcome this problem by increasing the light absorption and simultaneously improving the charge carrier mobility. N/H and N/F co-doping can delocalize the discrete mid-gap states created by sole N doping in AgTaO3, which increases the band curvature and the electron-to-hole effective mass ratio. In particular, N/F co-doping creates a continuum of states that extend the valence band of AgTaO3. N/F co-doping thus improves the light absorption without creating the mid-gap states, maintaining the necessary redox potentials for water splitting and preventing from charge carrier trapping. The experimental results have confirmed that the N/F-codoped AgTaO3 exhibits a red-shift of the absorption edge in comparison with the undoped AgTaO3, leading to remarkable enhancement of photocatalytic activity toward hydrogen generation from water.

  16. Carrier injection and recombination processes in perovskite CH3NH3PbI3 solar cells studied by electroluminescence spectroscopy

    Science.gov (United States)

    Handa, Taketo; Okano, Makoto; Tex, David M.; Shimazaki, Ai; Aharen, Tomoko; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-02-01

    Organic-inorganic hybrid perovskite materials, CH3NH3PbX3 (X = I and Br), are considered as promising candidates for emerging thin-film photovoltaics. For practical implementation, the degradation mechanism and the carrier dynamics during operation have to be clarified. We investigated the degradation mechanism and the carrier injection and recombination processes in perovskite CH3NH3PbI3 solar cells using photoluminescence (PL) and electroluminescence (EL) imaging spectroscopies. By applying forward bias-voltage, an inhomogeneous distribution of the EL intensity was clearly observed from the CH3NH3PbI3 solar cells. By comparing the PL- and EL-images, we revealed that the spatial inhomogeneity of the EL intensity is a result of the inhomogeneous luminescence efficiency in the perovskite layer. An application of bias-voltage for several tens of minutes in air caused a decrease in the EL intensity and the conversion efficiency of the perovskite solar cells. The degradation mechanism of perovskite solar cells under bias-voltage in air is discussed.

  17. Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Grunwald, Torben

    2009-12-17

    This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

  18. Modulated charge injection in p-type dye-sensitized solar cells using fluorene-based light absorbers.

    Science.gov (United States)

    Liu, Zonghao; Xiong, Dehua; Xu, Xiaobao; Arooj, Qudsia; Wang, Huan; Yin, Liyuan; Li, Wenhui; Wu, Huaizhi; Zhao, Zhixin; Chen, Wei; Wang, Mingkui; Wang, Feng; Cheng, Yi-Bing; He, Hongshan

    2014-03-12

    In this study, new pull-push arylamine-fluorene based organic dyes zzx-op1, zzx-op2, and zzx-op3 have been designed and synthesized for p-type dye-sensitized solar cells (p-DSCs). In zzx-op1, a di(p-carboxyphenyl)amine (DCPA) was used as an electron donor, a perylenemonoimide (PMID) as an electron acceptor, and a fluorene (FLU) unit with two aliphatic hexyl chains as a π-conjugated linker. In zzx-op2 and zzx-op3, a 3,4-ethylenedioxythiophene (EDOT) and a thiophene were inserted consecutively between PMID and FLU to tune the energy levels of the frontier molecular orbitals of the dyes. The structural modification broadened the spectral coverage from an onset of 700 nm for zzx-op1 to 750 nm for zzx-op3. The electron-rich EDOT and thiophene lifted up the HOMO (highest occupied molecular orbital) levels of zzx-op2 and zzx-op3, making their potential more negative than zzx-op1. When three dyes were employed in p-type DSCs with I(-)/I3(-) as a redox couple and NiO nanoparticles as hole materials, zzx-op1 exhibited impressive energy conversion efficiency of 0.184% with the open-circuit voltage (VOC) of 112 mV and the short-circuit current density (JSC) of 4.36 mA cm(-2) under AM 1.5G condition. Density functional theory calculations, transient photovoltage decay measurements, and electrochemical impedance spectroscopic studies revealed that zzx-op1 sensitized solar cell exhibited much higher charge injection efficiency (90.3%) than zzx-op2 (53.9%) and zzx-op3 (39.0%), indicating a trade-off between spectral broadening and electron injection driving force in p-type DSCs.

  19. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü., E-mail: uozgur@vcu.edu; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2015-05-04

    The effect of δ-doping of In{sub 0.06}Ga{sub 0.94}N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In{sub 0.15}Ga{sub 0.85}N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm{sup 2} in the reference LED to ∼120 A/cm{sup 2} in the LEDs with Mg δ-doped barriers.

  20. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    International Nuclear Information System (INIS)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-01-01

    The effect of δ-doping of In 0.06 Ga 0.94 N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In 0.15 Ga 0.85 N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm 2 in the reference LED to ∼120 A/cm 2 in the LEDs with Mg δ-doped barriers

  1. Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

    Science.gov (United States)

    Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-05-01

    The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

  2. Model of Organic Solar Cell Photocurrent Including the Effect of Charge Accumulation at Interfaces and Non-Uniform Carrier Generation

    DEFF Research Database (Denmark)

    Torto, Lorenzo; Cester, Andrea; Rizzo, Antonio

    2017-01-01

    We developed an improved model to fit the photocurrent density versus voltage in organic solar cells. The model has been validated by fitting data from P3HT:PCBM solar cells. Our model quantitatively accounts for the band bending near the electrodes caused by charge accumulation in the active layer...

  3. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  4. The artificially injected charged particles as a tool for the measurement of the electric field in the magnetosphere

    International Nuclear Information System (INIS)

    Pirre, M.

    1982-01-01

    This chapter discusses two methods of measuring the parallel electric field using artificially injected charged particles. The first method uses electrons to measure the parallel electric field in the vicinity of the spacecraft. The second method uses ions to measure electric potential along the magnetic field lines if the associated parallel electric field is directed downward. The use of electrons for the measurement has many limitations due to the disturbed regions surrounding the spacecraft and to the high level of turbulence which could significantly reduce accuracy. Even if the parallel electric fields are too low to be measured owing to the broadening of the fluxes by turbulence, the electrons can still be used to study the turbulence. It is demonstrated that if parallel electric fields are predominantly directed upward at high altitude, a downward parallel electric field can exist at lower altitude. Lithium ions can be used to maximize the returning fluxes and to increase the probability of detection. Rockets are shown to be more suitable than satellites with regard to measurement

  5. Localized vs. delocalized character of charge carriers in LaAlO3/SrTiO3 heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Kejin; Schlappa, Justine; Strocov, Vladimir; Frison, Ruggero; Patthey, Luc; Schmitt, Thorsten [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Radovic, Milan [Laboratory for Synchrotron and Neutron Spectroscopy, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Mesot, Joel [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Laboratory for Synchrotron and Neutron Spectroscopy, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland)

    2011-07-01

    Oxide heterostructures have been attracting great attention due to extraordinary phenomena occurring at the interface and their potential application for device design. A particularly fascinating system is the two-dimensional conductive interface between the band insulators LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO), which can be even driven to magnetic and superconducting phases at low temperatures. Resonant inelastic X-ray scattering at Ti L-edges is particularly suitable to address the electronic structure of its interface since the Ti{sup 3+} states clearly display strong dd excitations while Ti{sup 4+} states exhibit only elastic emission in the low energy loss regime. Our studies on LAO/STO superlattices prepared by pulsed laser deposition unambiguously reveal the presence of both localized and delocalized Ti 3d carriers generated during the building of the LAO/STO interfaces. Systematic studies on samples before and after annealing under O{sub 2} atmosphere and high temperature show that the dual character carriers can be either induced by electron transfer due to the polar-discontinuity or by oxygen vacancies defects. Oxygen vacancies and electronic reconstruction are equivalent in balancing the built-up electric potential.

  6. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  7. Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells

    International Nuclear Information System (INIS)

    Cheng, Zimeng; Delahoy, Alan E.; Su, Zhaoqian; Chin, Ken K.

    2014-01-01

    A model consisting of Shockley Read Hall (SRH) recombination under steady state conditions of constant photon injection is proposed in this work to study the steady state minority carrier lifetime in CdS/CdTe thin film solar cells. The SRH recombination rate versus optical injection level is analytically approximated in the junction and neutral regions. In the neutral region, it is found that the recombination rate through certain defect levels has one constant value under lower optical injection conditions and another constant value under higher optical injection conditions with the transition occurring at a critical optical injection level. By simultaneously solving the equations of charge neutrality, charge conservation and SRH recombination in the neutral region, it is found that the compensation of doping and the reduction of minority carrier lifetime by donors in the p-type semiconductor can each be remedied by optical injection. It is also demonstrated that this optical-dependent SRH recombination is significant in large bandgap thin films. The measured minority carrier diffusion length in a CdS/CdTe solar cells, as determined from the steady-state photo-generated carrier collection efficiency, shows the predicted transition of minority carrier lifetime versus optical injection level. A numerical fitting of the indirectly-measured minority carrier lifetime by assuming the minority carrier mobility gives a non-intuitive picture of the p–n junction with a low free hole concentration but a narrow depletion region width. - Highlights: • Minority carrier lifetimes under different optical injections are solved. • Simplifications of Shockley–Read–Hall recombination equation are discussed. • The compensation of donor can be remedied with optical injection. • The recombination efficiency of donor can be remedied with optical injection. • The minority carrier lifetime transition under illumination was experimentally observed

  8. Charge Transport in Spiro-OMeTAD Investigated through Space-Charge-Limited Current Measurements

    Science.gov (United States)

    Röhr, Jason A.; Shi, Xingyuan; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

    2018-04-01

    Extracting charge-carrier mobilities for organic semiconductors from space-charge-limited conduction measurements is complicated in practice by nonideal factors such as trapping in defects and injection barriers. Here, we show that by allowing the bandlike charge-carrier mobility, trap characteristics, injection barrier heights, and the shunt resistance to vary in a multiple-trapping drift-diffusion model, a numerical fit can be obtained to the entire current density-voltage curve from experimental space-charge-limited current measurements on both symmetric and asymmetric 2 ,2',7 ,7' -tetrakis(N ,N -di-4-methoxyphenylamine)-9 ,9' -spirobifluorene (spiro-OMeTAD) single-carrier devices. This approach yields a bandlike mobility that is more than an order of magnitude higher than the effective mobility obtained using analytical approximations, such as the Mott-Gurney law and the moving-electrode equation. It is also shown that where these analytical approximations require a temperature-dependent effective mobility to achieve fits, the numerical model can yield a temperature-, electric-field-, and charge-carrier-density-independent mobility. Finally, we present an analytical model describing trap-limited current flow through a semiconductor in a symmetric single-carrier device. We compare the obtained charge-carrier mobility and trap characteristics from this analytical model to the results from the numerical model, showing excellent agreement. This work shows the importance of accounting for traps and injection barriers explicitly when analyzing current density-voltage curves from space-charge-limited current measurements.

  9. Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

    Science.gov (United States)

    Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

    2017-08-01

    The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

  10. Energy spectrum of charge carriers in TlIn{sub 1–x}Yb{sub x}Te{sub 2} solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, F. F., E-mail: farzali@physics.ab.az [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Agaeva, U. M.; Zarbaliev, M. M., E-mail: zarbalievmm51@mail.ru [Sumqayit State University (Azerbaijan)

    2016-10-15

    The temperature dependences of the electrical conductivity σ(T), the Hall coefficient R(T), and the thermoelectric coefficient α(T) are investigated in TlIn{sub 1–x}Yb{sub x}Te{sub 2} (0 < x < 0.10) solid solutions at 80–1000K. From the kinetic parameters, the effective masses of electrons and holes are determined. The obtained experimental data on σ(T) and α(T) are interpreted within the context of a model with one and two types of charge carriers. It is established that, since x = 0.05, the TlIn{sub 1–x}Yb{sub x}Te{sub 2} solid solutions belong to the class of narrow-gap semiconductors that have high matrix elements of interaction.

  11. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    Science.gov (United States)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  12. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  13. Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components; Ladungstraegertransport in epitaktischen Strontiumtitanat-Schichten fuer den Einsatz in supraleitenden Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Grosse, Veit

    2011-02-01

    In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively {sigma}(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10{sup 7}..10{sup 8} V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

  14. Effects of piston surface treatments on performance and emissions of a methanol-fueled, direct injection, stratified charge engine

    Energy Technology Data Exchange (ETDEWEB)

    West, B.; Green, J.B. [Oak Ridge National Lab., TN (United States)

    1994-07-01

    The purpose of this study was to investigate the effects of thermal barrier coatings and/or surface treatments on the performance and emissions of a methanol-fueled, direct-injection, stratified-charge (DISC) engine. A Ricardo Hydra Mark III engine was used for this work and in previous experiments at Oak Ridge National Laboratory (ORNL). The primary focus of the study was to examine the effects of various piston insert surface treatments on hydrocarbon (HC) and oxides of nitrogen (NO{sub x}) emissions. Previous studies have shown that engines of this class have a tendency to perform poorly at low loads and have high unburned fuel emissions. A blank aluminum piston was modified to employ removable piston bowl inserts. Four different inserts were tested in the experiment: aluminum, stainless steel with a 1.27-mm (0.050-in.) air gap (to act as a thermal barrier), and two stainless steel/air-gap inserts with coatings. Two stainless steel inserts were dimensionally modified to account for the coating thickness (1.27-mm) and coated identically with partially stabilized zirconia (PSZ). One of the coated inserts then had an additional seal-coat applied. The coated inserts were otherwise identical to the stainless steel/air-gap insert (i.e., they employed the same 1.27-mm air gap). Thermal barrier coatings were employed in an attempt to increase combustion chamber surface temperatures, thereby reducing wall quenching and promoting more complete combustion of the fuel in the quench zone. The seal-coat was applied to the zirconia to reduce the surface porosity; previous research suggested that despite the possibly higher surface temperatures obtainable with a ceramic coating, the high surface area of a plasma-sprayed coating may actually allow fuel to adhere to the surface and increase the unburned fuel emissions and fuel consumption.

  15. Polyoxovanadate-alkoxide clusters as multi-electron charge carriers for symmetric non-aqueous redox flow batteries.

    Science.gov (United States)

    VanGelder, L E; Kosswattaarachchi, A M; Forrestel, P L; Cook, T R; Matson, E M

    2018-02-14

    Non-aqueous redox flow batteries have emerged as promising systems for large-capacity, reversible energy storage, capable of meeting the variable demands of the electrical grid. Here, we investigate the potential for a series of Lindqvist polyoxovanadate-alkoxide (POV-alkoxide) clusters, [V 6 O 7 (OR) 12 ] (R = CH 3 , C 2 H 5 ), to serve as the electroactive species for a symmetric, non-aqueous redox flow battery. We demonstrate that the physical and electrochemical properties of these POV-alkoxides make them suitable for applications in redox flow batteries, as well as the ability for ligand modification at the bridging alkoxide moieties to yield significant improvements in cluster stability during charge-discharge cycling. Indeed, the metal-oxide core remains intact upon deep charge-discharge cycling, enabling extremely high coulombic efficiencies (∼97%) with minimal overpotential losses (∼0.3 V). Furthermore, the bulky POV-alkoxide demonstrates significant resistance to deleterious crossover, which will lead to improved lifetime and efficiency in a redox flow battery.

  16. Relation between microstructure and dielectric breakdown in the case of aluminous ceramics (SEMM method); Comportement d'alumines face a l'injection de charges. Relation microstructure - claquage dielectrique - mesure des charges d'influence (methode SEMM)

    Energy Technology Data Exchange (ETDEWEB)

    Liebault, J.

    1999-02-01

    The dielectric breakdown is strongly linked to the injection and the accumulation of charges in a non-conducting material. The physics of charged insulators proposes mechanisms of trapping and transport of charges in aluminium oxides by considering defects as localization sources of charges and of energy. In order to measure the influence of defects on dielectric breakdown, various aluminous ceramics have been elaborated. The nature and the quantity of defects have been characterized by the nature and the rate of impurities, by porosity, by the quantity of grain boundaries and by the presence and distribution of secondary phases. These materials have undergone breakdown tests. The dielectric rigidity depends strongly on the nature and the distribution of crystallographic defects (vacancy, interstitial ions and dislocation), on the other hand porosity below 5% has no influence. The doping of an alumina ceramic containing less than 100 ppm of impurities implies a diminution of its dielectric rigidity. The measurement of the SEMM (scanning electron microscopy mirror) effect allows the characterization of insulating materials. This method permits the evaluation of the ability for materials to trap charges, it gives information about the charge kinetic of trapping, charge localization and the energy levels of traps. (A.C.)

  17. Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

    International Nuclear Information System (INIS)

    Cho, H Y; Kwon, Y K; Lee, C S; Lee, J H; Moon, J Y

    2011-01-01

    In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /Vc s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) x 10 -3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) x 10 -4 cm 2 /V.

  18. Transverse acceptance calculation for continuous ion beam injection into the electron beam ion trap charge breeder of the ReA post-accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kittimanapun, K., E-mail: kritsadak@slri.or.th [National Superconducting Cyclotron Laboratory (NSCL), Michigan State University (MSU), 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States); Synchrotron Light Research Institute (SLRI), 111 University Avenue, Muang District, Nakhon Ratchasima, 30000 (Thailand); Baumann, T.M.; Lapierre, A.; Schwarz, S. [National Superconducting Cyclotron Laboratory (NSCL), Michigan State University (MSU), 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States); Bollen, G. [National Superconducting Cyclotron Laboratory (NSCL), Michigan State University (MSU), 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States); Facility for Rare Isotope Beams (FRIB), Michigan State University, 640 S. Shaw Lane, East Lansing, Michigan 48824 (United States)

    2015-11-11

    The ReA post-accelerator at the National Superconducting Cyclotron Laboratory (NSCL) employs an electron beam ion trap (EBIT) as a charge breeder. A Monte-Carlo simulation code was developed to calculate the transverse acceptance phase space of the EBIT for continuously injected ion beams and to determine the capture efficiency in dependence of the transverse beam emittance. For this purpose, the code records the position and time of changes in charge state of injected ions, leading either to capture or loss of ions. To benchmark and validate the code, calculated capture efficiencies were compared with results from a geometrical model and measurements. The results of the code agree with the experimental findings within a few 10%. The code predicts a maximum total capture efficiency of 50% for EBIT parameters readily achievable and an efficiency of up to 80% for an electron beam current density of 1900 A/cm{sup 2}.

  19. High-performance serial block-face SEM of nonconductive biological samples enabled by focal gas injection-based charge compensation.

    Science.gov (United States)

    Deerinck, T J; Shone, T M; Bushong, E A; Ramachandra, R; Peltier, S T; Ellisman, M H

    2018-05-01

    A longstanding limitation of imaging with serial block-face scanning electron microscopy is specimen surface charging. This charging is largely due to the difficulties in making biological specimens and the resins in which they are embedded sufficiently conductive. Local accumulation of charge on the specimen surface can result in poor image quality and distortions. Even minor charging can lead to misalignments between sequential images of the block-face due to image jitter. Typically, variable-pressure SEM is used to reduce specimen charging, but this results in a significant reduction to spatial resolution, signal-to-noise ratio and overall image quality. Here we show the development and application of a simple system that effectively mitigates specimen charging by using focal gas injection of nitrogen over the sample block-face during imaging. A standard gas injection valve is paired with a precisely positioned but retractable application nozzle, which is mechanically coupled to the reciprocating action of the serial block-face ultramicrotome. This system enables the application of nitrogen gas precisely over the block-face during imaging while allowing the specimen chamber to be maintained under high vacuum to maximise achievable SEM image resolution. The action of the ultramicrotome drives the nozzle retraction, automatically moving it away from the specimen area during the cutting cycle of the knife. The device described was added to a Gatan 3View system with minimal modifications, allowing high-resolution block-face imaging of even the most charge prone of epoxy-embedded biological samples. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

  20. Charge imbalance

    International Nuclear Information System (INIS)

    Clarke, J.

    1981-01-01

    This article provides a long theoretical development of the main ideas of charge imbalance in superconductors. Concepts of charge imbalance and quasiparticle charge are introduced, especially in regards to the use of tunnel injection in producing and detecting charge imbalance. Various mechanisms of charge relaxation are discussed, including inelastic scattering processes, elastic scattering in the presence of energy-gap anisotropy, and various pair-breaking mechanisms. In each case, present theories are reviewed in comparison with experimental data

  1. Injection and temporary capture of a charged particle beam in an open magnetic configuration. Optimization of the configuration. Case of cylindrical symmetry: A mirror machine

    International Nuclear Information System (INIS)

    Capdequi-Peyranere, P.

    1966-12-01

    A study has been made of a new method of transverse injection of charged particles into a magnetic mirror configuration. This injection scheme permits the penetration and temporary capture by non-adiabatic effect of a particle beam of approximately 1 cm 2 cross-section. A theoretical study of the injection and capture is made in the approximation that space charge is negligible. The original programs for IBM 7094 computer calculations are described; these programs were used to obtain an optimization of the configuration. The results of a statistical numerical study of the optimum configuration are then given. This study indicates that, if the energy of the particles of the beam is about 1 per cent greater than a minimum penetration energy, the entire beam can be captured with an average capture length of 100 meters (50 reflections between the two mirrors). If the energy is about 4 per cent greater than the minimum penetration energy, the capture length is reduced to 40 meters. We have studied the distribution of energy transverse and longitudinal with the magnetic field for the population of captured particles. For the cases of injected molecular hydrogen ions or heavy CH 4 + ions, a study is made of the capture time of protons resulting from the dissociation of the ions by collisions with the neutral gas. Finally, we describe a model experiment using electrons designed to provide an experimental verification of the capture of the primary beam. (author) [fr

  2. A novel research approach on the dynamic properties of photogenerated charge carriers at Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films by a frequency-modulated surface photovoltage technology

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Zhang, Wei [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China); Xie, Tengfeng; Wang, Dejun [College of Chemistry, Jilin University, Changchun 130012 (China); Song, Xi-Ming, E-mail: songlab@lnu.edu.cn [Liaoning Key Laboratory for Green Synthesis and Preparative Chemistry of Advanced Materials, College of Chemistry, Liaoning University, Shenyang 110036 (China)

    2013-09-01

    Graphical abstract: The changed SPV with chopping frequencies indicate the separation speeds of photogenerated charge carriers in different films. - Highlights: • Ag{sub 2}S-sensitized TiO{sub 2} films show good photoelectric responses in visible-light region. • Frequency-modulated SPV give dynamic information and evidence of Ag{sub 2}S QDSSCs’ performance. • Frequency-modulated SPV can supply complementary information in the study of Ag{sub 2}S ODSSCs. - Abstract: Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films with different amount of Ag{sub 2}S were fabricated by a successive ionic layer adsorption and reaction (SILAR) method. The separation and transport of photogenerated charge carriers at different spectral regions were studied by the frequency-modulated surface photovoltage technology. Some novel dynamic information of photogenerated charge carriers in a wide spectral range is found. The results indicate that the rate and direction of separation (diffusion) for photogenerated charge carriers are closely related to the performance of quantum-dots-sensitized solar cells (QDSSCs) based on the Ag{sub 2}S/TiO{sub 2} nano-structure.

  3. Effect of fuel injection parameters on combustion stability and emissions of a mineral diesel fueled partially premixed charge compression ignition (PCCI) engine

    International Nuclear Information System (INIS)

    Jain, Ayush; Singh, Akhilendra Pratap; Agarwal, Avinash Kumar

    2017-01-01

    Highlights: • NOx and PM emissions were lowest at 700 bar fuel injection pressure (FIP). • PCCI showed lower knocking than compression ignition combustion mode. • Increasing FIP reduced emissions of nitrogen oxides and smoke opacity in PCCI mode. • Increasing FIP reduced nucleation mode particle concentration. • Increasing FIP with advanced main injection timings improved PCCI combustion. - Abstract: This experimental study focuses on developing new combustion concept for compression ignition (CI) engines by achieving partially homogeneous charge, leading to low temperature combustion (LTC). Partially premixed charge compression ignition (PCCI) combustion is a single-stage phenomenon, with combustion shifting towards increasingly premixed combustion phase, resulting in lower in-cylinder temperatures. PCCI leads to relatively lower emissions of oxides of nitrogen (NOx) and particulate matter (PM) simultaneously. To investigate combustion, performance and emission characteristics of the PCCI engine, experiments were performed in a mineral diesel fueled single cylinder research engine, which was equipped with flexible fuel injection equipment (FIE). Effects of fuel injection pressure (FIP) were investigated by changing the FIP from 400 bar to 1000 bar. Experiments were carried out by varying start of main injection (SoMI) timings (from 12° to 24° before top dead center (bTDC)), when using single pilot injection. This experimental study included detailed investigations of particulate characteristics such as particulate number-size distribution using engine exhaust particle sizer (EEPS), particulate bound trace metal analysis using inductively coupled plasma-optical emission spectrometer (ICP-OES), and soot morphology using transmission electron microscopy (TEM). PCCI combustion improved with increasing FIP (up to 700 bar) due to superior fuel atomization however further increasing FIP deteriorated PCCI combustion and engine performance due to intense

  4. The effect of charge carrier and doping site on thermoelectric properties of Mg2Sn0.75Ge0.25

    International Nuclear Information System (INIS)

    Saparamadu, Udara; Mao, Jun; Dahal, Keshab; Zhang, Hao; Tian, Fei; Song, Shaowei; Liu, Weishu; Ren, Zhifeng

    2017-01-01

    Mg 2 Sn 0.75 Ge 0.25 has been recently demonstrated to be a promising thermoelectric material for power generation in the temperature range from room temperature to 723 K because of the high power factor of ∼54 μW cm −1  K −2 upon Sb doping to the Sn site. The enhanced density of states effective mass and weak electron scattering from the alloying effect are believed to be the main reasons for the high power factor (PF) and hence high figure of merit (ZT). In this study, it is shown that the right choice of carrier donor also plays an important role in obtaining high power factor. The effect of carrier donors Y and La at Mg-site and Bi and P at Sn-site in Mg 2 Sn 0.75 Ge 0.25 is systematically investigated. It is found that charge donors at the Sn-site are much more effective than at the Mg-site in enhancing PF and ZT. Bi doped Mg 2 Sn 0.73 Bi 0.02 Ge 0.25 shows a peak ZT of ∼1.4 at 673 K, a peak PF of ∼54 μW cm −1  K −2 at 577 K, which resulted in an engineering figure of merit (ZT) eng of ∼0.76 and (PF) eng of ∼2.05 W m −1  K −1 for cold side fixed at 323 K and hot side at 723 K.

  5. Two interesting cases in spatial charge movement

    International Nuclear Information System (INIS)

    Novellino, R.A.

    1983-01-01

    The relation between current and voltage in a dielectric under radiation is obtained, assuming only one carrier to be mobile, recombination and injection of the mobile charge from the electrode. For this last boundary condition a constant charge density at the electrode-dielectric interface was chosen. The other problem treated is a generalization of the classic transient problem studied by Many-Rakavy, using the constant charge density boundary condition. Analytic solutions were obtained during the first transit time and computed ones for larger times. Some attention was given to the damped current oscilations approaching the steady state value. (Author) [pt

  6. Effect of different photoanode nanostructures on the initial charge separation and electron injection process in dye sensitized solar cells: A photophysical study with indoline dyes

    Energy Technology Data Exchange (ETDEWEB)

    Idígoras, Jesús [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Sobuś, Jan [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland); Jancelewicz, Mariusz [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Azaceta, Eneko; Tena-Zaera, Ramon [Materials Division, IK4-CIDETEC, Parque Tecnológico de San Sebastián, Paseo Miramón 196, Donostia-San Sebastián, 20009 (Spain); Anta, Juan A. [Nanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville (Spain); Ziółek, Marcin, E-mail: marziol@amu.edu.pl [Quantum Electronics Laboratory, Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, 61-614 Poznań (Poland)

    2016-02-15

    Ultrafast and fast charge separation processes were investigated for complete cells based on several ZnO-based photoanode nanostructures and standard TiO{sub 2} nanoparticle layers sensitized with the indoline dye coded D358. Different ZnO morphologies (nanoparticles, nanowires, mesoporous), synthesis methods (hydrothermal, gas-phase, electrodeposition in aqueous media and ionic liquid media) and coatings (ZnO–ZnO core–shell, ZnO–TiO{sub 2} core–shell) were measured by transient absorption techniques in the time scale from 100 fs to 100 μs and in the visible and near-infrared spectral range. All of ZnO cells show worse electron injection yields with respect to those with standard TiO{sub 2} material. Lower refractive index of ZnO than that of TiO{sub 2} is suggested to be an additional factor, not considered so far, that can decrease the performance of ZnO-based solar cells. Evidence of the participation of the excited charge transfer state of the dye in the charge separation process is provided here. The lifetime of this state in fully working devices extends from several ps to several tens of ps, which is much longer than the typically postulated electron injection times in all-organic dye-sensitized solar cells. The results here provided, comprising a wide variety of morphologies and preparation methods, point to the universality of the poor performance of ZnO as photoanode material with respect to standard TiO{sub 2}. - Highlights: • Wide variety of morphologies and preparation methods has been checked for ZnO cells. • All ZnO cells work worse than TiO{sub 2} ones. • Effective refractive index might be an additional factor in solar cell performance. • Excited charge transfer state of indoline dyes participates in the charge separation.

  7. Design of suitable carrier buffer for free-flow zone electrophoresis by charge-to-mass ratio and band broadening analysis.

    Science.gov (United States)

    Kong, Fan-Zhi; Yang, Ying; He, Yu-Chen; Zhang, Qiang; Li, Guo-Qing; Fan, Liu-Yin; Xiao, Hua; Li, Shan; Cao, Cheng-Xi

    2016-09-01

    In this work, charge-to-mass ratio (C/M) and band broadening analyses were combined to provide better guidance for the design of free-flow zone electrophoresis carrier buffer (CB). First, the C/M analyses of hemoglobin and C-phycocyanin (C-PC) under different pH were performed by CLC Protein Workbench software. Second, band dispersion due to the initial bandwidth, diffusion, and hydrodynamic broadening were discussed, respectively. Based on the analyses of the C/M and band broadening, a better guidance for preparation of free-flow zone electrophoresis CB was obtained. Series of experiments were performed to validate the proposed method. The experimental data showed high accordance with our prediction allowing the CB to be prepared easily with our proposed method. To further evaluate this method, C-PC was purified from crude extracts of Spirulina platensis with the selected separation condition. Results showed that C-PC was well separated from other phycobiliproteins that have similar physicochemical properties, and analytical grade product with purity up to 4.5 (A620/A280) was obtained. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Charge-exchange measurements of MHD activity during neutral beam injection in the Princeton Large Torus and the Poloidal Divertor Experiment

    International Nuclear Information System (INIS)

    Goldston, R.J.; Kaita, R.; Beiersdorfer, P.; Gammel, G.; Herndon, D.L.; McCune, D.C.; Meyerhofer, D.D.

    1986-07-01

    The horizontally scanning, multiangle charge-exchange analyzers on the Princeton Large Torus (PLT) and the Poloidal Divertor Experiment (PDX) were used to study the effects of MHD activity on the background ion distribution function and on the beam ion slowing-down process during high-power neutral injection. Sawtooth oscillations were observed in the fast ion flux on PLT and PDX, and measurements with neutral beams providing local neutral density enhancement indicate that ions are transported radially when these events occur. With near-perpendicular injection in PDX, at the lower toroidal fields necessary to maximize beta, rapid, repetitive bursts of greatly enhanced charge-exchange flux were observed. These are associated with the ''fishbone'' MHD instability, and a substantial depletion of the perpendicular slowing-down spectrum below the injection energy was seen. A simple phenomenological model for this loss mechanism was developed, and its use in simulation codes has been successful in providing good agreement with the data. The behavior and characteristics of this model are well matched by the direct theoretical calculations

  9. The charge collection in single side silicon microstrip detectors

    CERN Document Server

    Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

    2003-01-01

    The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

  10. Effects of Direct Fuel Injection Strategies on Cycle-by-Cycle Variability in a Gasoline Homogeneous Charge Compression Ignition Engine: Sample Entropy Analysis

    Directory of Open Access Journals (Sweden)

    Jacek Hunicz

    2015-01-01

    Full Text Available In this study we summarize and analyze experimental observations of cyclic variability in homogeneous charge compression ignition (HCCI combustion in a single-cylinder gasoline engine. The engine was configured with negative valve overlap (NVO to trap residual gases from prior cycles and thus enable auto-ignition in successive cycles. Correlations were developed between different fuel injection strategies and cycle average combustion and work output profiles. Hypothesized physical mechanisms based on these correlations were then compared with trends in cycle-by-cycle predictability as revealed by sample entropy. The results of these comparisons help to clarify how fuel injection strategy can interact with prior cycle effects to affect combustion stability and so contribute to design control methods for HCCI engines.

  11. A Low-Energy-Gap Thienochrysenocarbazole Dye for Highly Efficient Mesoscopic Titania Solar Cells: Understanding the Excited State and Charge Carrier Dynamics.

    Science.gov (United States)

    Wang, Junting; Xie, Xinrui; Weng, Guorong; Yuan, Yi; Zhang, Jing; Wang, Peng

    2018-05-09

    Maintaining both a high external quantum efficiency and a large open-circuit photovoltage of dye-sensitized solar cells (DSSCs) is a crucial challenge in the process of developing narrow-energy-gap dyes for the capture of infrared solar photons. Herein, we report two donor-acceptor organic dyes, C294 and C295, with a polycyclic heteroaromatic unit, 6,11-dihydrothieno[3',2':8,9]chryseno[10,11,12,1-bcdefg]carbazole (TCC), as the central module of the electron donor, and ethylbenzothiadiazole-benzioc acid as the electron acceptor. The interfacial charge recombination was successfully mitigated by introducing an additional branched aliphatic chain in C295. Furthermore, the O⋅⋅⋅S nonbonding interaction between the oxygen atom of the alkoxy group and the sulfur atom of the thiophene in C295 controlled the conformation of C295, resulting in a narrow energy-gap. Time-resolved spectroscopic measurements on C294 and the model dye C272 indicated that the elevation of the HOMO energy level decreased the kinetics and yield of hole injection owing to a reduction in the driving force and that the shortened excited-state lifetime caused by the narrowing of the energy gap was unfavorable for electron injection. By fine tuning the composition of the electrolyte, C294 and C295 eventually achieved high power conversion efficiencies of 11.5 % and 12.4 %, respectively, under full sunlight of air mass 1.5 global conditions. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  13. Effects of noble-metal ion implantation on corrosion inhibition and charge injection capability of surgical Ti and Ti-6Al-4V

    International Nuclear Information System (INIS)

    Lee, I.S.

    1989-01-01

    Studies are described involving effects of noble-metal ion implantation on corrosion inhibition and charge injection capabilities of surgical Ti and Ti-6Al-4V. With surgical alloys, harmful biological responses are principally due to the type and quantity of metal ions released by the corrosion process. One approach to improve long-term biological performance involves surface modifications to significantly reduce degradation rates. With regard to surface-modifications, one of the most effective methods is through ion implantation. Results are presented for ion-implanted Au, Rh, and Ir. For the static in vitro corrosion properties, the noble-metal ion implanted Ti-6Al-4V and commercially-pure (CP) Ti were investigated in non-passivating acid and passivating saline solutions. It was postulated that during the early stages of corrosion (or during a corrosion pretreatment) the implanted noble-metal would enrich at the surface and significantly reduce subsequent corrosion rates. The observed behavior for the Ir and Rh implanted materials appeared to follow the postulated mechanism, with both initial and time-dependent improvements in corrosion resistance. However, the Au implanted material yielded early benefits, but the enhanced corrosion resistance deteriorated with time. X-ray photoelectron spectroscopy (XPS) analysis indicated that the implanted Au atoms remained as pure metallic Au, while the Ir and Rh atoms were in some oxide state, which gave the good adhesion of the Ir or Rh enriched surface to the Ti substrate. For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Activated Ir has been known as having the highest charge injection capability of any material known

  14. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Korenev, V. V., E-mail: korenev@spbau.ru; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. [Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

    2013-10-15

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

  15. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    International Nuclear Information System (INIS)

    Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2013-01-01

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots

  16. Impact of the injected interstitial on the correlation of charged-particle and neutron-induced radiation damage

    International Nuclear Information System (INIS)

    Garner, F.A.

    1983-01-01

    The successful conclusion of an intercorrelation program developed in the U.S. Breeder program has provided significant insight on the factors governing the swelling that develops in ion-bombardment studies and its relationship to the swelling that occurs during neutron irradiation. It appears that the injected interstitial or a related phenomenon exerts a pronounced influence on ion-induced swelling. This conclusion has ramifications with respect to the conduct and interpretation of ion irradiation experiments employed to study the effect of helium or composition on swelling

  17. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S. [Department of Material Science and Engineering, Rensselaer Polytechnic Institute, 110 8th street, Troy, New York 12180 (United States)

    2016-08-07

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  18. The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Lin Xing Shi

    2018-02-01

    Full Text Available Charge carrier recombination in the perovskite solar cells (PSCs has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.

  19. Tail state-assisted charge injection and recombination at the electron-collecting interface of P3HT:PCBM bulk-heterojunction polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, He [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States); Shah, Manas [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Ganesan, Venkat [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Chabinyc, Michael L. [Materials Department, University of California Santa Barbara, CA 93106 (United States); Loo, Yueh-Lin [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States)

    2012-12-15

    The systematic insertion of thin films of P3HT and PCBM at the electron- and hole-collecting interfaces, respectively, in bulk-heterojunction polymer solar cells results in different extents of reduction in device characteristics, with the insertion of P3HT at the electron-collecting interface being less disruptive to the output currents compared to the insertion of PCBM at the hole-collecting interface. This asymmetry is attributed to differences in the tail state-assisted charge injection and recombination at the active layer-electrode interfaces. P3HT exhibits a higher density of tail states compared to PCBM; holes in these tail states can thus easily recombine with electrons at the electron-collection interface during device operation. This process is subsequently compensated by the injection of holes from the cathode into these tail states, which collectively enables net current flow through the polymer solar cell. The study presented herein thus provides a plausible explanation for why preferential segregation of P3HT to the cathode interface is inconsequential to device characteristics in P3HT:PCBM bulk-heterojunction solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Electro-optical and charge injection investigations of the donor-π-acceptor triphenylamine, oligocene–thiophene–pyrimidine and cyanoacetic acid based multifunctional dyes

    Directory of Open Access Journals (Sweden)

    Ahmad Irfan

    2015-10-01

    Full Text Available The corner stone of present study is to tune the electro-optical and charge transport properties of donor-bridge-acceptor (D-π-A triphenylamine (TPA derivatives. In the present investigation, an electron deficient moiety (pyrimidine, electron-rich moiety (thiophene and oligocene (benzene, naphthalene, anthracene, tetracene and pentacene have been incorporated as π-spacer between the donor TPA unit and cyanoacetic acid acceptor and anchoring group. The elongation of bridge usually affects the energy levels, i.e., higher the highest occupied molecular orbital (HOMO while lower the lowest unoccupied molecular orbital (LUMO thus reduces the HOMO–LUMO energy gap. The lowered LUMO energy levels of cyano-{2-[6-(4-diphenylamino-phenyl-pyrimidin-4-yl]-tetraceno[2,3-b]thiophen-8-yl}-acetic acid (TPA-PTT4 and cyano-{2-[6-(4-diphenylamino-phenyl-pyrimidin-4-yl]-pentaceno[2,3-b]thiophen-9-yl}-acetic acid (TPA-PPT5 dyes revealed that electron injected from dye to semiconductor surface might be auxiliary stable resulting in impediment of quenching. The broken co-planarity between the π-spacer conceiving LUMO and the TPA moiety would help to impede the recombination process. Moreover, it is expected that TPA derivatives with the tetracenothiophene and pentacenothiophene moieties as π-bridge would show better photovoltaic performance due to lowered LUMO energy level, higher electronic coupling constant, light harvesting efficiency and electron injection values.

  1. Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

    Science.gov (United States)

    Schoeche, Stefan

    The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

  2. Histidine-lysine peptides as carriers of nucleic acids.

    Science.gov (United States)

    Leng, Qixin; Goldgeier, Lisa; Zhu, Jingsong; Cambell, Patricia; Ambulos, Nicholas; Mixson, A James

    2007-03-01

    With their biodegradability and diversity of permutations, peptides have significant potential as carriers of nucleic acids. This review will focus on the sequence and branching patterns of peptide carriers composed primarily of histidines and lysines. While lysines within peptides are important for binding to the negatively charged phosphates, histidines are critical for endosomal lysis enabling nucleic acids to reach the cytosol. Histidine-lysine (HK) polymers by either covalent or ionic bonds with liposomes augment transfection compared to liposome carriers alone. More recently, we have examined peptides as sole carriers of nucleic acids because of their intrinsic advantages compared to the bipartite HK/liposome carriers. With a protocol change and addition of a histidine-rich tail, HK peptides as sole carriers were more effective than liposomes alone in several cell lines. While four-branched polymers with a primary repeating sequence pattern of -HHK- were more effective as carriers of plasmids, eight-branched polymers with a sequence pattern of -HHHK- were more effective as carriers of siRNA. Compared to polyethylenimine, HK carriers of siRNA and plasmids had reduced toxicity. When injected intravenously, HK polymers in complex with plasmids encoding antiangiogenic proteins significantly decreased tumor growth. Furthermore, modification of HK polymers with polyethylene glycol and vascular-specific ligands increased specificity of the polyplex to the tumor by more than 40-fold. Together with further development and insight on the structure of HK polyplexes, HK peptides may prove to be useful as carriers of different forms of nucleic acids both in vitro and in vivo.

  3. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Girish [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India); Department of Chemistry, School of Engineering and Technology, CMR University, Bengaluru, 562149, Karnataka (India); Rao, K.S.R. Koteswara, E-mail: raoksrk@gmail.com [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India)

    2017-01-01

    Graphical abstract: Semiconductor metal oxides: Modifications, charge carrier dynamics and photocatalysis. - Highlights: • TiO{sub 2}, WO{sub 3} and ZnO based photocatalysis is reviewed. • Advances to improve the efficiency are emphasized. • Differences and similarities in the modifications are highlighted. • Charge carrier dynamics for each strategy are discussed. - Abstract: Metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO{sub 2}, WO{sub 3} & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO{sub 2} and WO{sub 3} in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal

  4. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds: implications for the DIB carrier

    NARCIS (Netherlands)

    Cox, N.L.J.; Spaans, M.

    2006-01-01

    Context.The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims.In order to reveal the

  5. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds : implications for the DIB carrier

    NARCIS (Netherlands)

    Cox, NLJ; Spaans, M

    Context. The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims. In order to reveal the

  6. Self-scaling minority carrier lifetime imaging using periodically modulated electroluminescence

    Science.gov (United States)

    Kropp, Timo; Berner, Marcel; Werner, Jürgen H.

    2017-11-01

    We present a straightforward self-scaling imaging technique to extract the effective minority carrier lifetime image of silicon solar cells using periodically modulated electroluminescence. This novel modulation technique overcomes main limiting factors linked to camera integration time. Our approach is based on comparing three luminescence images taken during current modulation. One image is taken while periodically injecting excess charge carriers with a pulsed current stimulation followed by an open-circuit luminescence decay. A second image with the same injection profile is taken while additionally extracting excess charge carriers at the falling edge, accelerating the luminescence decay. Both images are normalized to a steady-state image. The camera integration time is several orders of magnitude longer than the modulation period length, and no synchronization of image acquisition is needed. The intensity difference between both modulated images is used for determining a calibration factor to convert the steady-state image into the effective minority carrier lifetime image: Our modulation method enables carrier lifetime images completely independent of the image integration time. First carrier lifetime images show good agreement with data from time resolved electroluminescence.

  7. The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2014-12-01

    It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.

  8. The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

    International Nuclear Information System (INIS)

    Korenev, V V; Savelyev, A V; Zhukov, A E; Omelchenko, A V; Maximov, M V

    2014-01-01

    It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences

  9. Boosting the Visible-Light Photoactivity of BiOCl/BiVO4/N-GQD Ternary Heterojunctions Based on Internal Z-Scheme Charge Transfer of N-GQDs: Simultaneous Band Gap Narrowing and Carrier Lifetime Prolonging.

    Science.gov (United States)

    Zhu, Mingyue; Liu, Qian; Chen, Wei; Yin, Yuanyuan; Ge, Lan; Li, Henan; Wang, Kun

    2017-11-08

    The efficient separation of photogenerated electron-hole pairs in photoactive materials is highly desired, allowing their transfer to specific sites for undergoing redox reaction in various applications. The construction of ternary heterojunctions is a practical strategy to enhance the migration of photogenerated electron that realizes the synergistic effect of multicomponents rather than the simple overlay of single component. Here, we demonstrate an available way to fabricate new BiOCl/BiVO 4 /nitrogen-doped graphene quantum dot (N-GQD) ternary heterojunctions that exhibit higher efficiency in charge separation than any binary heterojunction or pure material under visible-light irradiation. UV-vis diffuse reflectance spectroscopy demonstrated that the proposed BiOCl/BiVO 4 /N-GQD ternary heterojunctions possess the narrower band gap energy. More importantly, the ternary heterojunctions reveal the prolonged lifetime of photogenerated charges and enhanced the separation efficiency of photogenerated electron-hole pairs, which may be ascribed to sensitization based on an internal Z-scheme charge transfer at the interface of N-GQDs with oxygen functional groups. Furthermore, we examine the photoactive performance of proposed ternary heterojunctions in aqueous solution by using the photodegradation of bisphenol A as a model system and BiOCl/BiVO 4 /N-GQD ternary heterojunctions also display a dramatically enhanced photodegradation rate. The proposed charge separation and transfer process of BiOCl/BiVO 4 /N-GQD ternary heterojunctions for the enhanced photoactivity were deduced by electrochemical measurements, photoluminescence, and electron spin resonance. The results demonstrate that a Z-scheme charge process was formed between BiOCl/BiVO 4 binary heterojunctions and N-GQDs, leading to an efficient charge carrier separation and strong photocatalytic ability. Notably, this work may assist in a better understanding of the role of N-GQDs in kinds of heterojunctions

  10. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  11. Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors

    International Nuclear Information System (INIS)

    Witczak, S.C.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The combined effects of ionizing radiation and hot-carrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The result imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation

  12. Room-Temperature Triple-Ligand Surface Engineering Synergistically Boosts Ink Stability, Recombination Dynamics, and Charge Injection toward EQE-11.6% Perovskite QLEDs.

    Science.gov (United States)

    Song, Jizhong; Li, Jinhang; Xu, Leimeng; Li, Jianhai; Zhang, Fengjuan; Han, Boning; Shan, Qingsong; Zeng, Haibo

    2018-06-10

    Developing low-cost and high-quality quantum dots (QDs) or nanocrystals (NCs) and their corresponding efficient light-emitting diodes (LEDs) is crucial for the next-generation ultra-high-definition flexible displays. Here, there is a report on a room-temperature triple-ligand surface engineering strategy to play the synergistic role of short ligands of tetraoctylammonium bromide (TOAB), didodecyldimethylammonium bromide (DDAB), and octanoic acid (OTAc) toward "ideal" perovskite QDs with a high photoluminescence quantum yield (PLQY) of >90%, unity radiative decay in its intrinsic channel, stable ink characteristics, and effective charge injection and transportation in QD films, resulting in the highly efficient QD-based LEDs (QLEDs). Furthermore, the QD films with less nonradiative recombination centers exhibit improved PL properties with a PLQY of 61% through dopant engineering in A-site. The robustness of such properties is demonstrated by the fabrication of green electroluminescent LEDs based on CsPbBr 3 QDs with the peak external quantum efficiency (EQE) of 11.6%, and the corresponding peak internal quantum efficiency (IQE) and power efficiency are 52.2% and 44.65 lm W -1 , respectively, which are the most-efficient perovskite QLEDs with colloidal CsPbBr 3 QDs as emitters up to now. These results demonstrate that the as-obtained QD inks have a wide range application in future high-definition QD displays and high-quality lightings. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. The effect of the Grain-Boundary and surface scattering of charge carriers on electrical conductance of thin V and Re films

    International Nuclear Information System (INIS)

    Lakh, Kh.G.; Stasyuk, Z.V.

    1994-01-01

    Size effects in electrical conductivity and the Hall coefficient of thin V and Re films have been investigated. An analysis of experimental data was made within the framework of modified Mayadas -Shatzkes and Tellier - Tosser - Pichard models. The parameters of charge transport for V and Re have been found

  14. A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se4 and Cu(In,GaSe2 thin film solar cells

    Directory of Open Access Journals (Sweden)

    Mohammad Abdul Halim

    2016-03-01

    Full Text Available A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se4 (CZTSSe and the CuInGaSe2 (CIGS solar cells has been carried out. For this purpose, electroluminescence (EL and also bias-dependent time resolved photoluminescence (TRPL using femtosecond (fs laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  15. A comparative study on charge carrier recombination across the junction region of Cu{sub 2}ZnSn(S,Se){sub 4} and Cu(In,Ga)Se{sub 2} thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Halim, Mohammad Abdul, E-mail: halimtsukuba2012@gmail.com; Islam, Muhammad Monirul; Luo, Xianjia; Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki [Energy Solution Business Center, Showa Shell Sekiyu K.K., Minato, Tokyo 135-8074 (Japan); Tampo, Hitoshi; Shibata, Hajime; Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-03-15

    A comparative study with focusing on carrier recombination properties in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) and the CuInGaSe{sub 2} (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V{sub OC} suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  16. Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

    Science.gov (United States)

    Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-06-02

    The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells.

  17. Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

    Science.gov (United States)

    Riminucci, Alberto; Graziosi, Patrizio; Calbucci, Marco; Cecchini, Raimondo; Prezioso, Mirko; Borgatti, Francesco; Bergenti, Ilaria; Dediu, Valentin Alek

    2018-04-01

    The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (˜0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm-3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.

  18. Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

    Science.gov (United States)

    Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

    2018-04-01

    It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

  19. Direct Observation of Ultrafast Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy.

    Science.gov (United States)

    Ishioka, Kunie; Barker, Bobby G; Yanagida, Masatoshi; Shirai, Yasuhiro; Miyano, Kenjiro

    2017-08-17

    Efficient charge separation at the interfaces of the perovskite with the carrier transport layers is crucial for perovskite solar cells to achieve high power conversion efficiency. We present a systematic experimental study on the hole injection dynamics from MAPbI 3 perovskite to three typical hole transport materials (HTMs). We extract the carrier dynamics directly related to the hole injection by employing a pump light with short absorption depth and comparing the transient transmission signals excited on the two sides of the sample. The differential transmission signals reveal the hole injections to PTAA and PEDOT:PSS to be complete within 1 and 2 ps, respectively, and that to NiO x to exhibit an additional slow process on a 40 ps time scale. The obtained injection dynamics are discussed in comparison with the device performance of the solar cells containing the same MAPbI 3 /HTM interfaces.

  20. Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

    Science.gov (United States)

    Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

    2014-03-11

    Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

  1. Unravelling charge carrier dynamics in protonated g-C3N4 interfaced with carbon nanodots as co-catalysts toward enhanced photocatalytic CO2 reduction: A combined experimental and first-principles DFT study

    Institute of Scientific and Technical Information of China (English)

    Wee-Jun Ong; Lutfi Kurnianditia Putri; Yoong-Chuen Tan; Lling-Lling Tan; Neng Li; Yun Hau Ng; Xiaoming Wen; Siang-Piao Chai

    2017-01-01

    In this work,we demonstrated the successful construction of metal-free zerodimensional/two-dimensional carbon nanodot (CND)-hybridized protonated g-C3N4 (pCN) (CND/pCN) heterojunction photocatalysts by means of electrostatic attraction.We experimentally found that CNDs with an average diameter of 4.4 nm were uniformly distributed on the surface of pCN using electron microscopy analysis.The CND/pCN-3 sample with a CND content of 3 wt.% showed the highest catalytic activity in the CO2 photoreduction process under visible and simulated solar light.Thisprocess results in the evolution of CH4 and CO.The total amounts of CH4 and CO generated by the CND/pCN-3 photocatalyst after 10 h of visible-light activity were found to be 29.23 and 58.82 μmol·gcatalyst-1,respectively.These values were 3.6 and 2.28 times higher,respectively,than the amounts generated when using pCN alone.The corresponding apparent quantum efficiency (AQE) was calculated to be 0.076%.Furthermore,the CND/pCN-3 sample demonstrated high stability and durability after four consecutive photoreaction cycles,with no significant decrease in the catalytic activity.The significant improvement in the photoactivity using CND/pCN-3 was attributed to the synergistic interaction between pCN and CNDs.This synergy allows the effective migration of photoexcited electrons from pCN to CNDs via wellcontacted heterojunction interfaces,which retards the charge recombination.This was confirmed by photoelectrochemical measurements,and steady-state and time-resolved photoluminescence analyses.The first-principles density functional theory (DFT) calculations were consistent with our experimental results,and showed that the work function of CNDs (5.56 eV) was larger than that of pCN (4.66 eV).This suggests that the efficient shuttling of electrons from the conduction band of pCN to CNDs hampers the recombination of electron-hole pairs.This significantly increased the probability of free charge carriers reducing CO2 to CH4

  2. Radionuclide carrier

    International Nuclear Information System (INIS)

    Hartman, F.A.; Kretschmar, H.C.; Tofe, A.J.

    1978-01-01

    A physiologically acceptable particulate radionuclide carrier is described. It comprises a modified anionic starch derivative with 0.1% to 1.5% by weight of a reducing agent and 1 to 20% by weight of anionic substituents

  3. Carrier Screening

    Science.gov (United States)

    ... How accurate is carrier screening? No test is perfect. In a small number of cases, test results ... in which an egg is removed from a woman’s ovary, fertilized in a laboratory with the man’s ...

  4. Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2018-02-01

    The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

  5. Universal diffusion-limited injection and the hook effect in organic thin-film transistors

    Science.gov (United States)

    Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

    2016-01-01

    The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

  6. Fabrication of a Co(OH)2/ZnCr LDH "p-n" Heterojunction Photocatalyst with Enhanced Separation of Charge Carriers for Efficient Visible-Light-Driven H2 and O2 Evolution.

    Science.gov (United States)

    Sahoo, Dipti Prava; Nayak, Susanginee; Reddy, K Hemalata; Martha, Satyabadi; Parida, Kulamani

    2018-04-02

    Photocatalytic generation of H 2 and O 2 by water splitting remains a great challenge for clean and sustainable energy. Taking into the consideration promising heterojunction photocatalysts, analogous energy issues have been mitigated to a meaningful extent. Herein, we have architectured a highly efficient bifunctional heterojunction material, i.e., p-type Co(OH) 2 platelets with an n-type ZnCr layered double hydroxide (LDH) by an ultrasonication method. Primarily, the Mott-Schottky measurements confirmed the n- and p-type semiconductive properties of LDH and CH material, respectively, with the construction of a p-n heterojunction. The high resolution transmission electron microscopy results suggest that surface modification of ZnCr LDH by Co(OH) 2 hexagonal platelets could form a fabulous p-n interfacial region that significantly decreases the energy barrier for O 2 and H 2 production by effectively separating and transporting photoinduced charge carriers, leading to enhanced photoreactivity. A deep investigation into the mechanism shows that a 30 wt % Co(OH) 2 -modified ZnCr LDH sample liberates maximum H 2 and O 2 production in 2 h, i.e., 1115 and 560 μmol, with apparent conversion efficiencies of H 2 and O 2 evolution of 13.12% and 6.25%, respectively. Remarkable photocatalytic activity with energetic charge pair transfer capability was illustrated by electrochemical impedance spectroscopy, linear sweep voltammetry, and photoluminescence spectra. The present study clearly suggests that low-cost Co(OH) 2 platelets are the most crucial semiconductors to provide a new p-n heterojunction photocatalyst for photocatalytic H 2 and O 2 production on the platform of ZnCr LDH.

  7. Non-local electrical spin injection and detection in germanium at room temperature

    Science.gov (United States)

    Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

    2017-10-01

    Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

  8. Dual-gate operation and carrier transport in SiGe p-n junction nanowires

    Science.gov (United States)

    Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

    2017-11-01

    We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

  9. Evolution of radiation losses and importance of charge exchange between plasma impurities and injection beam neutrals in the W VII-A stellarator

    International Nuclear Information System (INIS)

    Smeulders, P.

    1981-01-01

    In certain discharges during Neutral Injection (N.I.) (84 0 CO-injection) in the 1 = 2, m = 5 WENDELSTEIN VII-A Stellarator impurity accumulation in the plasma center seems to occur as seen by bolometric, spectroscopic and ultra soft X-ray (USX) measurement. The time evolution of the radiation losses is shown. Three possible sources of the impurities which are responsible for the high central radiation losses are: - Beam injected impurities. - Plasma wall interaction. - Molybdenum protection plates. Possible mechanisms that can be responsible for the central impurity accumulations are: - An inward flow of the plasma or beam impurities. - An increased peaking of the depostion of the beam impurities. Various factors influencing the behaviour of the central radiation are mentioned. (orig./AH)

  10. Subcutaneous administration of carrier erythrocytes: slow release of entrapped agent

    International Nuclear Information System (INIS)

    DeLoach, J.R.; Corrier, D.E.

    1988-01-01

    Carrier erythrocytes administered subcutaneously in mice release encapsulated molecules at the injection site and through cells that escape the injection site. One day postinjection, the efflux of encapsulated [ 14 C]sucrose, [ 3 H]inulin, and 51 Cr-hemoglobin from the injection site was 45, 55, and 65%, respectively. Intact carrier erythrocytes escaped the injection site and entered the blood circulation carrying with them the encapsulated molecules. Most of the encapsulated [ 3 H]inulin that reached whole blood circulated within erythrocytes. Small but measurable numbers of encapsulated molecules were trapped within lymph nodes. Subcutaneous injection of carrier erythrocytes may allow for limited extravascular tissue targeting of drugs

  11. Charge carrier dynamics in photovoltaic materials

    NARCIS (Netherlands)

    Jensen, S.A.

    2014-01-01

    We employ the experimental technique THz Time Domain spectroscopy (THz-TDS) to study the optoelectronic properties of potential photovoltaic materials. This all-optical method is useful for probing photoconductivities in a range of materials on ultrafast timescales without the application of

  12. Highly efficient tandem OLED based on C{sub 60}/rubrene: MoO{sub 3} as charge generation layer and LiF/Al as electron injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); College of Science, Tianjin University of Technology, Tianjin 300384 (China); Wu, Xiaoming, E-mail: wxm@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Xiao, Zhihui; Gao, Jian; Zhang, Juan; Rui, Hongsong; Lin, Xin; Zhang, Nan; Hua, Yulin [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Yin, Shougen, E-mail: sgyin@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China)

    2017-08-15

    Highlights: • Highly efficient blue fluorescent tandem OLEDs are fabricated. • The optimal tandem OLED consists of C{sub 60}/rubrene: MoO{sub 3} as a CGL and LiF/Al as an EIL. • Current efficiency and power efficiency of optimal tandem OLED is markedly enhanced. • The turn-on and driving voltages of optimal tandem OLED is obviously reduced. - Abstract: Tandem organic light-emitting diodes (OLEDs) have received much attention in solid-state lighting due to their high current efficiency, long lifetime and excellent stability. The highly efficient blue fluorescent tandem OLEDs based on the charge generation layer (CGL) of C{sub 60}/rubrene: MoO{sub 3} and the electron injection layer (EIL) of LiF/Al were fabricated. The ultra-thin Al layer in EIL was introduced to further increase electron injection from CGL to the emission unit. We found that the maximal current efficiency and power efficiency of optimal tandem device can reach to 43.1 cd/A and 15.1 lm/W, respectively, which are approximately 2.8 and 1.9 times compared with those of single-emissive-unit device. Moreover, compared with the traditional tandem device, the driving voltage of the optimal device is reduced by 6 V, and the turn-on voltage is reduced by 2.4 V. We analyzed the mechanism and characterization of these tandem devices. The effective charge separation and transport of C{sub 60}/rubrene: MoO{sub 3}, and excellent electron injection ability of ultra-thin Al layer are the main factors for the remarkable enhancement in both current efficiency and power efficiency of tandem OLEDs.

  13. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    as their purchases of aircraft carrier systems, makes it more than likely that the country is preparing such an acquisition. China has territorial disputes in the South China Sea over the Spratly Islands and is also worried about the security of its sea lines of communications, by which China transports the majority......, submarines, aircraft and helicopters, is not likely to be fully operational and war-capable until 2020, given the fact that China is starting from a clean sheet of paper. The United States of America (USA), the United Kingdom (UK), Russia and India are currently building or have made decisions to build new...

  14. Charge Generation and Propagation in Igneous Rocks

    Science.gov (United States)

    Freund, Friedemann

    2002-01-01

    Various electrical phenomena have been reported prior to or concurrent with earthquakes such as resistivity changes, ground potentials, electromagnetic (EM), and luminous signals. Doubts have been raised as to whether some of these phenomena are real and indeed precursory. One of the reasons for uncertainty is that, despite decades of intense work, there is still no physically coherent model. Using low- to medium-velocity impacts to measure electrical signals with microsecond time resolution, it has now been observed that when dry gabbro and diorite cores are impacted at relatively low velocities, approximately 100 m/s, highly mobile charge carriers are generated in a small volume near the impact point. They spread through the rocks, causing electric potentials exceeding +400 mV, EM, and light emission. As the charge cloud spreads, the rock becomes momentarily conductive. When a dry granite block is impacted at higher velocity, approximately 1.5 km/s, the propagation of the P and S waves is registered through the transient piezoelectric response of quartz. After the sound waves have passed, the surface of the granite block becomes positively charged, suggesting the same charge carriers as observed during the low-velocity impact experiments, expanding from within the bulk. During the next 2-3 ms the surface potential oscillates, indicating pulses of electrons injected from ground and contact electrodes. The observations are consistent with positive holes, e.g., defect electrons in the O(2-) sublattice, traveling via the O 2p-dominated valence band of the silicate minerals. Before activation, the positive holes lay dormant in the form of electrically inactive positive hole pairs (PHP), chemically equivalent to peroxy links, O3X/OO\\XO3, with X=Si(4+), Al(3+), etc. PHPs are introduced into the minerals by way of hydroxyl,O3X-OH, which all nominally anhydrous minerals incorporate when crystallizing in H2O-laden environments. The fact that positive holes can be

  15. Measurement of carrier lifetime and linewidth enhancement factor for 1.5- mu m ridge-waveguide laser amplifier

    DEFF Research Database (Denmark)

    Storkfelt, Niels; Mikkelsen, B.; Olesen, D. S.

    1991-01-01

    Semiconductor optical amplifiers are used for investigation of the effective carrier lifetime and the linewidth enhancement factor. Contrary to semiconductor lasers, semiconductor optical amplifiers allow measurement at high levels of injected carrier density. The carrier lifetime and the linewid...

  16. MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  17. Terahertz carrier dynamics in graphene and graphene nanostructures

    DEFF Research Database (Denmark)

    Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan

    2014-01-01

    Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

  18. Injection and temporary capture of a charged particle beam in an open magnetic configuration. Optimization of the configuration. Case of cylindrical symmetry: A mirror machine; Etude de l'injection et de la capture temporaire d'un faisceau de particules chargees dans une configuration magnetique ouverte. Optimisation de la configuration. Cas de la symetrie de revolution: Machine a miroirs

    Energy Technology Data Exchange (ETDEWEB)

    Capdequi-Peyranere, P [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

    1966-12-01

    A study has been made of a new method of transverse injection of charged particles into a magnetic mirror configuration. This injection scheme permits the penetration and temporary capture by non-adiabatic effect of a particle beam of approximately 1 cm{sup 2} cross-section. A theoretical study of the injection and capture is made in the approximation that space charge is negligible. The original programs for IBM 7094 computer calculations are described; these programs were used to obtain an optimization of the configuration. The results of a statistical numerical study of the optimum configuration are then given. This study indicates that, if the energy of the particles of the beam is about 1 per cent greater than a minimum penetration energy, the entire beam can be captured with an average capture length of 100 meters (50 reflections between the two mirrors). If the energy is about 4 per cent greater than the minimum penetration energy, the capture length is reduced to 40 meters. We have studied the distribution of energy transverse and longitudinal with the magnetic field for the population of captured particles. For the cases of injected molecular hydrogen ions or heavy CH{sub 4}{sup +} ions, a study is made of the capture time of protons resulting from the dissociation of the ions by collisions with the neutral gas. Finally, we describe a model experiment using electrons designed to provide an experimental verification of the capture of the primary beam. (author) [French] On etudie un nouveau schema d'injection transversale de particules chargees dans une configuration magnetique a miroirs. Ce mode d'injection permet la penetration et la capture temporaire par effet non adiabatique d'un faisceau de particules presentant une section de l'ordre de 1 cm{sup 2}. Une etude theorique du probleme de l'injection et de la capture est faite en supposant la charge d'espace negligeable. On decrit des programmes originaux de calcul sur ordinateur IBM 7094 permettant l

  19. The use of charge extraction by linearly increasing voltage in polar organic light-emitting diodes

    Science.gov (United States)

    Züfle, Simon; Altazin, Stéphane; Hofmann, Alexander; Jäger, Lars; Neukom, Martin T.; Schmidt, Tobias D.; Brütting, Wolfgang; Ruhstaller, Beat

    2017-05-01

    We demonstrate the application of the CELIV (charge carrier extraction by linearly increasing voltage) technique to bilayer organic light-emitting devices (OLEDs) in order to selectively determine the hole mobility in N,N0-bis(1-naphthyl)-N,N0-diphenyl-1,10-biphenyl-4,40-diamine (α-NPD). In the CELIV technique, mobile charges in the active layer are extracted by applying a negative voltage ramp, leading to a peak superimposed to the measured displacement current whose temporal position is related to the charge carrier mobility. In fully operating devices, however, bipolar carrier transport and recombination complicate the analysis of CELIV transients as well as the assignment of the extracted mobility value to one charge carrier species. This has motivated a new approach of fabricating dedicated metal-insulator-semiconductor (MIS) devices, where the extraction current contains signatures of only one charge carrier type. In this work, we show that the MIS-CELIV concept can be employed in bilayer polar OLEDs as well, which are easy to fabricate using most common electron transport layers (ETLs), like Tris-(8-hydroxyquinoline)aluminum (Alq3). Due to the macroscopic polarization of the ETL, holes are already injected into the hole transport layer below the built-in voltage and accumulate at the internal interface with the ETL. This way, by a standard CELIV experiment only holes will be extracted, allowing us to determine their mobility. The approach can be established as a powerful way of selectively measuring charge mobilities in new materials in a standard device configuration.

  20. Testosterone Injection

    Science.gov (United States)

    ... typical male characteristics. Testosterone injection works by supplying synthetic testosterone to replace the testosterone that is normally ... as a pellet to be injected under the skin.Testosterone injection may control your symptoms but will ...

  1. Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

    Science.gov (United States)

    Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

    2016-05-01

    Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

  2. A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

    International Nuclear Information System (INIS)

    Bisoyi, Sibani; Tiwari, Shree Prakash; Rödel, Reinhold; Zschieschang, Ute; Klauk, Hagen; Kang, Myeong Jin; Takimiya, Kazuo

    2016-01-01

    A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C 10 -DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm 2 V −1 s −1 . The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 10 12 cm −2 , despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior. (paper)

  3. Effects of electric field and magnetic induction on spin injection into organic semiconductors

    International Nuclear Information System (INIS)

    Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

    2011-01-01

    Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

  4. Dominant role of many-body effects on the carrier distribution function of quantum dot lasers

    Science.gov (United States)

    Peyvast, Negin; Zhou, Kejia; Hogg, Richard A.; Childs, David T. D.

    2016-03-01

    The effects of free-carrier-induced shift and broadening on the carrier distribution function are studied considering different extreme cases for carrier statistics (Fermi-Dirac and random carrier distributions) as well as quantum dot (QD) ensemble inhomogeneity and state separation using a Monte Carlo model. Using this model, we show that the dominant factor determining the carrier distribution function is the free carrier effects and not the choice of carrier statistics. By using empirical values of the free-carrier-induced shift and broadening, good agreement is obtained with experimental data of QD materials obtained under electrical injection for both extreme cases of carrier statistics.

  5. Integer Charge Transfer and Hybridization at an Organic Semiconductor/Conductive Oxide Interface

    KAUST Repository

    Gruenewald, Marco

    2015-02-11

    We investigate the prototypical hybrid interface formed between PTCDA and conductive n-doped ZnO films by means of complementary optical and electronic spectroscopic techniques. We demonstrate that shallow donors in the vicinity of the ZnO surface cause an integer charge transfer to PTCDA, which is clearly restricted to the first monolayer. By means of DFT calculations, we show that the experimental signatures of the anionic PTCDA species can be understood in terms of strong hybridization with localized states (the shallow donors) in the substrate and charge back-donation, resulting in an effectively integer charge transfer across the interface. Charge transfer is thus not merely a question of locating the Fermi level above the PTCDA electron-transport level but requires rather an atomistic understanding of the interfacial interactions. The study reveals that defect sites and dopants can have a significant influence on the specifics of interfacial coupling and thus on carrier injection or extraction.

  6. Capacity spectroscopy of minority-carrier radiation traps in n-type silicon

    International Nuclear Information System (INIS)

    Kuchinskij, P.V.; Lomako, V.M.; Shakhlevich, L.N.

    1987-01-01

    Minority charge-carrier radiation traps in n-silicon, produced by neutron transmutation doping (NTD) and zone melting method, were studied using unsteady capacity spectroscopy method. Studying the parameters of defects, formed in the lower half of the restricted zone, was performed using minority carrier injection by forward current pulses. Samples were p + -n-structures, produced on the basis of silicon with different oxygen content. It is shown, that a trap with activation energy ≅E v +0.34 eV appears to be the main defect in oxygen p-silicon. Investigation into thermal stability has shown, that centers with E v +0.34 eV and E v +0.27 eV activation energies are annealed within the same temperature interval (300-400 deg C)

  7. Characteristics of carrier-generated field-effect transistors with pentacene/vanadium pentoxide

    International Nuclear Information System (INIS)

    Minagawa, M.; Nakai, K.; Baba, A.; Shinbo, K.; Kato, K.; Kaneko, F.; Lee, C.

    2011-01-01

    In this paper, the driving mechanism of carrier-generated organic field-effect transistors (OFETs) with pentacene and vanadium pentoxide (V 2 O 5 ) layers is discussed. In this study, large on-currents were observed in an OFET with a 35-nm V 2 O 5 layer. Devices with aluminum (Al)/pentacene/V 2 O 5 /Al layer structures were also prepared. These devices exhibited a large current density in spite of their high carrier injection barriers between each layer and the Al electrodes. Moreover, new absorption bands corresponding to the radical cation absorption of pentacene were observed within the absorption spectrum of the pentacene and V 2 O 5 mixed layers. It was inferred that the charge transfer (CT) complexes that formed at the interface between the pentacene and V 2 O 5 layers were dissociated by the applied gate voltage and that the generated holes contributed to driving the OFETs.

  8. Effects of electric field and charge distribution on nanoelectronic processes involving conducting polymers

    International Nuclear Information System (INIS)

    Ramos, Marta M.D.; Correia, Helena M.G.

    2006-01-01

    The injection of charge carriers in conducting polymer layers gives rise to local electric fields which should have serious implications on the charge transport through the polymer layer. The charge distribution and the related electric field inside the ensemble of polymer molecules, with different molecular arrangements at nanoscale, determine whether or not intra-molecular charge transport takes place and the preferential direction for charge hopping between neighbouring molecules. Consequently, these factors play a significant role in the competition between current flow, charge trapping and recombination in polymer-based electronic devices. By suitable Monte Carlo calculations, we simulated the continuous injection of electrons and holes into polymer layers with different microstructures and followed their transport through those polymer networks. Results of these simulations provided a detailed picture of charge and electric field distribution in the polymer layer and allowed us to assess the consequences for current transport and recombination efficiency as well as the distribution of recombination events within the polymer film. In the steady state we found an accumulation of electrons and holes near the collecting electrodes giving rise to an internal electric field which is greater than the external applied field close to the electrodes and lower than the one in the central region of the polymer layer. We also found that a strong variation of electric field inside the polymer layer leads to an increase of recombination events in regions inside the polymer layer where the values of the internal electric field are lower

  9. Photo-induced charge transfer at heterogeneous interfaces: Dye-sensitized tin disulfide, the theory and the experiment

    International Nuclear Information System (INIS)

    Lanzafame, J.M.

    1993-01-01

    The study of photo-induced charge transfer is an endeavor that spans the entire industrial period of man's history. Its great importance demands an ever greater understanding of its underlying principles. The work discussed here attempts to probe elementary aspects of the charge transfer process. Investigations into the theory of charge transfer reactions are made in an attempt to isolate the relevant parameters. An analytical discussion is made of a simple Golden Rule type rate equation to describe the transfer kinetics. Then a quantum simulation is carried out to follow the wavefunction propagation as a test of the applicability of the assumptions made in deriving the simpler rate equation. Investigation of charge transfer at surfaces is bet served by the application of ultrafast optical spectroscopies to probe carrier dynamics. A discussion of the properties of the short pulse laser systems employed is included along with a discussion of the different optical spectroscopies available. These tools are then brought to bear upon dye-sensitized SnS 2 , a model system for the study of charge injection processes. The unique properties of the semiconductor are discussed with respect to the charge transfer process. The unique properties of the semiconductor are discussed with respect to the charge transfer process. The optical experiments performed on the dye/SnS 2 systems elucidate the fundamental carrier dynamics and these dynamics are discussed within the theoretical framework to provide a complete picture of the charge transfer kinetics

  10. Investigation of radiative charging of dielectrics irradiated by ions

    International Nuclear Information System (INIS)

    Dergobuzov, K.A.; Yalovets, A.P.

    1994-01-01

    Within the framework of the Gusel'nikov mathematical model are fulflled numerical investigations of charging dielectrics irradiated with ions and atoms. The model accounts for dynamics of quasi-free charge carriers of each sign with account of processes of dielectrics ionization with a beam, charge recombination and charge drift in an electric fields. The effective mobility of charge carriers is determined with account for its dependence on the dose rate

  11. Around the laboratories: Dubna: Physics results and progress on bubble chamber techniques; Stanford (SLAC): Operation of a very rapid cycling bubble chamber; Daresbury: Photographs of visitors to the Laboratory; Argonne: Charge exchange injection tests into the ZGS in preparation for a proposed Booster

    CERN Multimedia

    1969-01-01

    Around the laboratories: Dubna: Physics results and progress on bubble chamber techniques; Stanford (SLAC): Operation of a very rapid cycling bubble chamber; Daresbury: Photographs of visitors to the Laboratory; Argonne: Charge exchange injection tests into the ZGS in preparation for a proposed Booster

  12. Granisetron Injection

    Science.gov (United States)

    Granisetron immediate-release injection is used to prevent nausea and vomiting caused by cancer chemotherapy and to ... nausea and vomiting that may occur after surgery. Granisetron extended-release (long-acting) injection is used with ...

  13. Edaravone Injection

    Science.gov (United States)

    Edaravone injection is used to treat amyotrophic lateral sclerosis (ALS, Lou Gehrig's disease; a condition in which ... die, causing the muscles to shrink and weaken). Edaravone injection is in a class of medications called ...

  14. Meropenem Injection

    Science.gov (United States)

    ... injection is in a class of medications called antibiotics. It works by killing bacteria that cause infection.Antibiotics such as meropenem injection will not work for colds, flu, or other viral infections. Taking ...

  15. Chloramphenicol Injection

    Science.gov (United States)

    ... injection is in a class of medications called antibiotics. It works by stopping the growth of bacteria..Antibiotics such as chloramphenicol injection will not work for colds, flu, or other viral infections. Taking ...

  16. Colistimethate Injection

    Science.gov (United States)

    ... injection is in a class of medications called antibiotics. It works by killing bacteria.Antibiotics such as colistimethate injection will not work for colds, flu, or other viral infections. Using ...

  17. Defibrotide Injection

    Science.gov (United States)

    Defibrotide injection is used to treat adults and children with hepatic veno-occlusive disease (VOD; blocked blood ... the body and then returned to the body). Defibrotide injection is in a class of medications called ...

  18. Nalbuphine Injection

    Science.gov (United States)

    ... injection is in a class of medications called opioid agonist-antagonists. It works by changing the way ... suddenly stop using nalbuphine injection, you may experience withdrawal symptoms including restlessness; teary eyes; runny nose; yawning; ...

  19. Multi-shot type pellet injection device

    International Nuclear Information System (INIS)

    Onozuka, Masaki; Uchikawa, Takashi; Kuribayashi, Shitomi.

    1988-01-01

    Purpose: To inject pellets at high speed without melting or sublimating not-injected pellets even at a long pellet injection interval. Constitution: In the conventional multi-shot pellet injection device, the pellet injection interval is set depending on the plasma retention time. However, as the pellet injection interval is increased, not-injected pellets are melted or sublimated due to the introduced heat of acceleration gases supplied from an acceleration gas introduction pipe to give an effect on the dimensional shape of the pellets. In view of the above, a plurality of pellet forming and injection portions each comprising a carrier, an injection pipe and a holder are disposed independently of each other and pellets are formed and injected independently to thereby prevent the thermal effects of the acceleration gases. (Kamimura, M.)

  20. Multi-shot type pellet injection device

    Energy Technology Data Exchange (ETDEWEB)

    Onozuka, Masaki; Uchikawa, Takashi; Kuribayashi, Shitomi.

    1988-07-27

    Purpose: To inject pellets at high speed without melting or sublimating not-injected pellets even at a long pellet injection interval. Constitution: In the conventional multi-shot pellet injection device, the pellet injection interval is set depending on the plasma retention time. However, as the pellet injection interval is increased, not-injected pellets are melted or sublimated due to the introduced heat of acceleration gases supplied from an acceleration gas introduction pipe to give an effect on the dimensional shape of the pellets. In view of the above, a plurality of pellet forming and injection portions each comprising a carrier, an injection pipe and a holder are disposed independently of each other and pellets are formed and injected independently to thereby prevent the thermal effects of the acceleration gases. (Kamimura, M.).

  1. Higher lung accumulation of intravenously injected organic nanotubes

    Directory of Open Access Journals (Sweden)

    Maitani Y

    2013-01-01

    Full Text Available Yoshie Maitani,1 Yuri Nakamura,1 Masao Kon,1 Emi Sanada,1 Kae Sumiyoshi,1 Natsuki Fujine,1 Masumi Asakawa,2 Masaki Kogiso,2 Toshimi Shimizu21Institute of Medicinal Chemistry, Hoshi University, Tokyo, Japan; 2Nanotube Research Center (NTRC, National Institute of Advanced Industrial Science and Technology (AIST, Tsukuba, JapanAbstract: The size and shape of intravenously injected particles can affect their biodistribution and is of importance for the development of particulated drug carrier systems. In this study, organic nanotubes (ONTs with a carboxyl group at the surface, a length of approximately 2 µm and outer diameter of 70–90 nm, were injected intravenously into tumor-bearing mice. To use ONTs as drug carriers, the biodistribution in selected organs of ONTs postinjection was examined using irinotecan, as an entrapped water-soluble marker inside ONTs, and gadolinium-chelated ONT, as an ONT marker, and compared with that of a 3 µm fluorescently labeled spherical microparticle which was similar size to the length of ONTs. It was found that for irinotecan, its active metabolite and gadolinium-chelated ONTs were highly accumulated in the lung, but to a lower level in the liver and spleen. On the other hand, microparticles deposited less in the lung and more highly in the liver. Moreover, histologic examination showed ONTs distributed more in lung tissues in part, whereas microparticles were present in blood vessels postinjection. These preliminary results support the notion of using negatively charged ONTs as intravascular carriers to maximize accumulation in the lung whilst reducing sequestration by the liver and spleen. This finding suggested that ONTs are potential carriers for lung-targeting drug delivery.Keywords: organic nanotube, lung, biodistribution, microparticle, particle shape

  2. Solution-processed high-LUMO-level polymers in n-type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

    International Nuclear Information System (INIS)

    Liu, Chuan; Xu, Yong; Liu, Xuying; Minari, Takeo; Sirringhaus, Henning; Noh, Yong-Young

    2015-01-01

    In solution-processed organic field-effect transistors (OFETs), the polymers with high level of lowest unoccupied molecular orbitals (LUMOs, > −3.5 eV) are especially susceptible to electron-trapping that causes low electron mobility and strong instability in successive operation. However, the role of high-LUMO-level polymers could be different depending on their locations relative to the semiconductor/insulator interface, or could even possibly benefit the device in some cases. We constructed unconventional polymer heterojunction n-type OFETs to control the location of the same polymer with a high LUMO level, to be in, under, or above the accumulation channel. We found that although the devices with the polymer in the channel suffer from dramatic instability, the same polymer causes much less instability when it acts as a dielectric modification layer or charge injection layer. Especially, it may even improve the device performance in the latter case. This result helps to improve our understanding of the electron-trapping and explore the value of these polymers in OFETs. (invited article)

  3. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  4. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

    International Nuclear Information System (INIS)

    Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.; Clark, Timothy

    2015-01-01

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves

  5. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Thilo; Jäger, Christof M. [Department of Chemistry and Pharmacy, Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen (Germany); Jordan, Meredith J. T. [School of Chemistry, University of Sydney, Sydney, NSW 2006 (Australia); Clark, Timothy, E-mail: tim.clark@fau.de [Department of Chemistry and Pharmacy, Computer-Chemistry-Center and Interdisciplinary Center for Molecular Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nägelsbachstrasse 25, 91052 Erlangen (Germany); Centre for Molecular Design, University of Portsmouth, Portsmouth PO1 2DY (United Kingdom)

    2015-07-28

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

  6. Simulations of charge transport in organic light emitting diodes

    International Nuclear Information System (INIS)

    Martin, Simon James

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for the observed temperature and electric field dependence of carrier mobilities in disordered organic semiconductors. A hopping transport model has been developed which accounts explicitly for the structure in highly ordered films of rigid rod liquid-crystalline conjugated polymers. Chapter 2 discusses the formation of metal-semiconductor contacts, and current injection processes in OLEDs. If the barrier to carrier injection at a metal-semiconductor contact is small, or the contact is Ohmic, then the current may be space charge limited; this second limiting regime of current flow for OLEDs is also described. The remainder of Chapter 2 describes the drift-diffusion model used in this work in some detail. Chapter 3 contains results obtained from modelling the J-V characteristics of single-layer OLEDs, which are compared to experimental data in order to validate the drift-diffusion model. Chapter 4 contains results of simulating bi-layer OLEDs; rather than examining J

  7. Carrier dynamics and surface vibration-assisted Auger recombination in porous silicon

    Science.gov (United States)

    Zakar, Ammar; Wu, Rihan; Chekulaev, Dimitri; Zerova, Vera; He, Wei; Canham, Leigh; Kaplan, Andrey

    2018-04-01

    injection level of the free carriers, charge-carrier scattering time related high-frequency conductivity, and the free-carrier absorption at the midwave infrared range.

  8. Carrier population control and surface passivation in solar cells

    KAUST Repository

    Cuevas, Andres; Wan, Yimao; Yan, Di; Samundsett, Christian; Allen, Thomas; Zhang, Xinyu; Cui, Jie; Bullock, James

    2018-01-01

    Controlling the concentration of charge carriers near the surface is essential for solar cells. It permits to form regions with selective conductivity for either electrons or holes and it also helps to reduce the rate at which they recombine

  9. Charge transport in organic light-emitting diodes. Experiments and simulations

    Energy Technology Data Exchange (ETDEWEB)

    Schober, Matthias

    2012-11-01

    This thesis is about the development and validation of a numerical model for the simulation of the current-voltage characteristics of organic thin-film devices. The focus is on the analysis of a white organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emitters. The simulation model describes the charge transport as a one-dimensional drift-diffusion current and is developed on the basis of the Scharfetter-Gummel method. It incorporates modern theories for the charge transport in disordered organic materials, which are considered by means of special functions for the diffusion coefficient and the charge-carrier mobility. The algorithm is designed such that it can switch between different models for mobility and calculates both transient and steady-state solutions. In the analysis of the OLED, electron and hole transport are investigated separately in series of single-carrier devices. These test devices incorporate parts of the layers in the OLED between symmetrically arranged injection layers that are electrically doped. Thereby, the OLED layer sequence is reconstructed step by step. The analysis of the test devices allows to obtain the numerous parameters which are required for the simulation of the complete OLED and reveals many interesting features of the OLED. For instance, it is shown how the accumulation of charge carriers in front of an interface barrier increases the mobility and the transfer rate across the interface. Furthermore, it is demonstrated how to identify charge-trapping states. This leads to the detection of deep trap states in the emission zone of the OLED -- an interesting aspect, since these states can function as recombination centers and may cause non-radiative losses. Moreover, various other effects such as interface dipoles and a slight freeze-out of active electric dopants in the injection layers are observed. In the simulations of the numerous test devices, the parameters are consistently applied

  10. Hot-carrier effects on irradiated deep submicron NMOSFET

    International Nuclear Information System (INIS)

    Cui Jiangwei; Zheng Qiwen; Yu Xuefeng; Cong Zhongchao; Zhou Hang; Guo Qi; Wen Lin; Wei Ying; Ren Diyuan

    2014-01-01

    We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress. (semiconductor devices)

  11. Charge Transport Along Phenylenevinylene Molecular Wires

    OpenAIRE

    2006-01-01

    Abstract A model to calculate the mobility of charges along molecular wires is presented. The model is based on the tight-binding approximation and combines a quantum mechanical description of the charge with a classical description of the structural degrees of freedom. It is demonstrated that the average mobility of charge carriers along molecular wires can be obtained by time-propagation of states which are initially localised. The model is used to calculate the mobility of charg...

  12. Subcutaneous Injections

    DEFF Research Database (Denmark)

    Thomsen, Maria

    This thesis is about visualization and characterization of the tissue-device interaction during subcutaneous injection. The tissue pressure build-up during subcutaneous injections was measured in humans. The insulin pen FlexTouchr (Novo Nordisk A/S) was used for the measurements and the pressure ...

  13. Hydromorphone Injection

    Science.gov (United States)

    ... anyone else to use your medication. Store hydromorphone injection in a safe place so that no one else can use it accidentally or on purpose. Keep track of how much medication is left so ... with hydromorphone injection may increase the risk that you will develop ...

  14. Ketorolac Injection

    Science.gov (United States)

    ... an older adult, you should know that ketorolac injection is not as safe as other medications that can be used to treat your condition. Your doctor may choose to prescribe a different medication ... to ketorolac injection.Your doctor or pharmacist will give you the ...

  15. Paclitaxel Injection

    Science.gov (United States)

    (pak'' li tax' el)Paclitaxel injection must be given in a hospital or medical facility under the supervision of a doctor who is experienced in giving chemotherapy medications for cancer.Paclitaxel injection may cause a large decrease in the number of white blood cells (a type of blood cell ...

  16. Carrier dynamics in graphene. Ultrafast many-particle phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Malic, E.; Brem, S.; Jago, R. [Department of Physics, Chalmers University of Technology, Goeteborg (Sweden); Winzer, T.; Wendler, F.; Knorr, A. [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany); Mittendorff, M.; Koenig-Otto, J.C.; Schneider, H.; Helm, M.; Winnerl, S. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Ploetzing, T.; Neumaier, D. [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany)

    2017-11-15

    Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Multidose Botulinum Toxin A for Intralaryngeal Injection: A Cost Analysis.

    Science.gov (United States)

    Gilbert, Mark R; Young, VyVy N; Smith, Libby J; Rosen, Clark A

    2018-01-04

    Botulinum toxin A (BtxA) injection is the mainstay treatment for laryngeal dystonias. BtxA product labeling states that reconstituted toxin should be used within 4 hours on a single patient despite several studies that have demonstrated multidose BtxA to be safe and effective. Many insurance carriers mandate the use of an outside pharmacy which necessitates a single-use approach. This study compares the cost savings of multidose BtxA for laryngeal dystonia compared to single-use. This is a retrospective review and projected cost savings analysis. Records and billing information were reviewed for patients receiving BtxA for intralaryngeal injection at a single laryngology division in 2015. Inclusion criteria included CPT 64617 or J0585; exclusion criteria included CPT 64616. The price of BtxA 100 unit vial for calculation was $670. A total of 142 patients were seen for intralaryngeal BtxA injection resulting in 337 visits over 1 year. The average BtxA dose per visit was 2.86 units with an average of 3.06 procedure visits per year. The calculated cost of BtxA treatment using a single vial approach was found to be $2,050 per patient per year. If billed instead for $7/unit with 5 units wastage charge per visit, the yearly per patient charge is $168. Single vial-use of BtxA injection thus represents a 1,118% price increase versus multidose use. When estimated for yearly prevalence of spasmodic dysphonia, multidose BtxA use would save almost $100 million annually. Multidose botulinum toxin A application utilizing per unit billing is significantly less expensive than per single-use vial billing and would save the health-care system significant amount of money without any sacrifice in safety or effectiveness. Copyright © 2018. Published by Elsevier Inc.

  18. Determination of space charge region width and diffusion length in Cu(In,Ga)(S,Se)2 absorber from solar cell spectral characteristic

    International Nuclear Information System (INIS)

    Tivanov, M.; Mazanik, A.; Drozdov, N.; Zaretskaya, E.

    2010-01-01

    Full text : The space-charge region width and diffusion length of minority charge carriers in the base region (Cu(In,Ga)(S,Se) 2 absorber) are the most important parameters of the solar cell. These parameters determine the efficiency of a solar cell therefore the problem of their control is essential. In this work it is present simple non-destructive method of extracting the parameters of Cu(In,Ga)(S,Se) 2 -based solar cell (space-charge region width and diffusion length of minority charge carriers in Cu(In,Ga)(S,Se) 2 absorber) from the analysis of solar cell spectral photoresponse. The method is based on one-dimensional model of a solar cell and on the change of in-depth distribution of the photogenerated carriers in the solar cell and, hence, on the change of its photoresponse with the wave-length variation. The following assumptions are accepted: the reflection of charge carriers from a back contact and the ''drawing'' field in the quasi-neutral area of the absorber layers are absent, window and buffer layers are transparent in the analyzed part of photoresponse spectrum, the injection level of minority charge carriers is low, the recombination losses at the metallurgical p-n-junction interface of the studied photosensitive structure linearly depend on the photocurrent density. For the calculation it is necessary to obtain the following set of the experimental data: the spectral density of incident radiation, the spectral dependence of photocurrent or photovoltage of the studied photosensitive structure, the spectral dependences of optical absorption coefficient and reflectance.

  19. Separation and recombinatiuon of charge carriers in solar cells with a nanostructured ZnO electrode; Trennung und Rekombination von Ladungstraegern in Solarzellen mit nanostrukturierter ZnO-Elektrode

    Energy Technology Data Exchange (ETDEWEB)

    Tornow, Julian

    2010-03-02

    The publication investigates electrodes consisting of ZnO nanorods deposited hydrothermally on conductive glass substrate (conductive glass). The electrodes are transparent to visible light and are sensitized for solar cell applications by a light-absorbing layer which in this case consists either of organometallic dye molecules (N3) or of an indium sulfide layer with a thickness of only a few nanometers. Electric contacts for the sensitized electrode are either made of a liquid electrolyte or of a perforated solid electrolyte. Methods of analysis were impedance spectroscopy, time-resolved photocurrent measurements, and time-resolved microwave photoconductivity. A high concentration of up to 10{sup 20} was found in the ZnO nanorods. The dye-sensitized solar cell showed exessively fast recombination with the oxydized dye molecules (sub-{mu}s) but a slow recombination rate with the oxydized redox ions of the electrolyte (ms). In the indium sulfide solar cells, the charges are separated at the contact with the ZnO nanorods while contact with the perforated CuSCN conductor is not charge-separating. Recombination takes place in indium sulfide, directly between the perforated conductor and ZnO, and also via the charge-separating contact with decreasing rates.

  20. Two-Dimensional Charge Transport in Disordered Organic Semiconductors

    NARCIS (Netherlands)

    Brondijk, J. J.; Roelofs, W. S. C.; Mathijssen, S. G. J.; Shehu, A.; Cramer, T.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

    2012-01-01

    We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides