New functionality of chalcogenide glasses for radiation sensing of nuclear wastes.

Science.gov (United States)

Ailavajhala, M S; Gonzalez-Velo, Y; Poweleit, C D; Barnaby, H J; Kozicki, M N; Butt, D P; Mitkova, M

2014-03-30

Data about gamma radiation induced effects in Ge40Se60 chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I-V) and impedance measurements expound the behavior of Ge40Se60 glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag2Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I-V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films. Copyright © 2013 Elsevier B.V. All rights reserved.

Electrical conduction mechanism in GeSeSb chalcogenide glasses

Indian Academy of Sciences (India)

by melt quenching has been determined at different temperatures in bulk through the I–V characteristic curves ... DC conductivity; chalcogenide glass; Sb–Se bonding; Poole–Frenkel mechanism .... measurements were taken at room temperature as well as ele- .... age across the sample was continuued, the induced thermal.

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Czech Academy of Sciences Publication Activity Database

Kostka, Petr; Zavadil, Jiří; Iovu, M.S.; Ivanova, Z. G.; Furniss, D.; Seddon, A.B.

2015-01-01

Roč. 648, NOV 5 (2015), s. 237-243 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 3.014, year: 2015

Chalcogenide Glass Optical Waveguides for Infrared Biosensing

Directory of Open Access Journals (Sweden)

Bruno Bureau

2009-09-01

Full Text Available Due to the remarkable properties of chalcogenide (Chg glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (biosensors.

Inverse opal photonic crystal of chalcogenide glass by solution processing.

Science.gov (United States)

Kohoutek, Tomas; Orava, Jiri; Sawada, Tsutomu; Fudouzi, Hiroshi

2011-01-15

Chalcogenide opal and inverse opal photonic crystals were successfully fabricated by low-cost and low-temperature solution-based process, which is well developed in polymer films processing. Highly ordered silica colloidal crystal films were successfully infilled with nano-colloidal solution of the high refractive index As(30)S(70) chalcogenide glass by using spin-coating method. The silica/As-S opal film was etched in HF acid to dissolve the silica opal template and fabricate the inverse opal As-S photonic crystal. Both, the infilled silica/As-S opal film (Δn ~ 0.84 near λ=770 nm) and the inverse opal As-S photonic structure (Δn ~ 1.26 near λ=660 nm) had significantly enhanced reflectivity values and wider photonic bandgaps in comparison with the silica opal film template (Δn ~ 0.434 near λ=600 nm). The key aspects of opal film preparation by spin-coating of nano-colloidal chalcogenide glass solution are discussed. The solution fabricated "inorganic polymer" opal and the inverse opal structures exceed photonic properties of silica or any organic polymer opal film. The fabricated photonic structures are proposed for designing novel flexible colloidal crystal laser devices, photonic waveguides and chemical sensors. Copyright © 2010 Elsevier Inc. All rights reserved.

On the instability effects in radiation-sensitive chalcogenide glasses

International Nuclear Information System (INIS)

Balitska, V.; Kovalskiy, A.; Shpotyuk, O.; Vakiv, M.

2007-01-01

The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy γ-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters

On the instability effects in radiation-sensitive chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Balitska, V. [Lviv State University for Vital Activity Safety, 35 Kleparivska str., Lviv, UA-79007 (Ukraine); Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Kovalskiy, A. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)], E-mail: shpotyuk@novas.lviv.ua; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)

2007-04-15

The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy {gamma}-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters.

Thermal Stability and Optical Activity of Erbium Doped Chalcogenide Glasses for Photonics

Science.gov (United States)

Tonchev, D.; Koughia, K.; Kasap, S. O.; Maeda, K.; Sakai, T.; Ikuta, J.; Ivanova, Z. G.

The glass transition and crystallization temperatures (T g , T c ), heat capacity, thermal stability and glass uniformity of GeSGa, GeSeGa, Ge(SeTe)Ga chalcogenide glasses doped with Er3+ by the addition of Er2S3 have been investigated by conventional differential scanning calorimetry (DSC) and Temperature-Modulated DSC (TMDSC). While some of the glasses have two crystallization peaks, these glasses were nonetheless optically actively and uniform. Essential optical properties have been evaluated, such as the photoluminescence (PL) intensity and lifetime as a function of the glass composition. We present typical results to emphasize some of the important characteristics of these systems and discuss trends within a glass system; and also highlight differences between glass systems.

Diffusion of 64Cu in copper-containing chalcogenide glasses

International Nuclear Information System (INIS)

Vlasov, Yu.G.; Bychkov, E.A.; Bolotov, A.M.; Tsegel'nik, V.S.; Gavrilov, Yu.A.

1996-01-01

Diffusion experiments with 64 Cu radioactive tracer for a number of copper-containing chalcogenide glasses CuI-As 2 Se 3 , Cu-SbI 3 -As 2 Se 3 , CuI-PbI 2 -As 2 Se 3 , CuI-PbI 2 -SbI 3 -As 2 Se 3 and Cu 2 Se-As 2 Se 3 are carried out for the first time. The results of diffusion and electrodiffusion measurements are in correspondence with information on electroconductivity and diffusion in a limited space (cage diffusion) from the Moessbauer spectroscopy on 124 I. It is shown for the first time that the Cheivin factor index for copper-conducting glasses in by 2-3 times higher as compared to silver-conducting glasses with approximate diffusion coefficients indices. 27 refs., 3 figs., 1 tab

Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

Directory of Open Access Journals (Sweden)

McMillen Ben

2013-11-01

Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

Origin of the frequency shift of Raman scattering in chalcogenide glasses

DEFF Research Database (Denmark)

Han, X.C.; Tao, H.Z.; Gong, L.J.

2014-01-01

of the shift is associated with the topological connectivity of global network and/or the local environment of structural units, (e.g., tetrahedral GeSe4). Here we show the compositional evolution of the main Raman scattering frequency in Ge(SxSe1−x)2 glasses, and then clarify its structural origin. We keep...... units such as GeS4 tetrahedra. The ab-initio calculations of normal Raman mode combined with group theory analysis provide insight into the structural evolution of chalcogenide glasses with varying composition....

Glass transition behavior and crystallization kinetics of Cu0.3(SSe20)0.7 chalcogenide glass

International Nuclear Information System (INIS)

Soliman, A.A.

2005-01-01

The glass transition behavior and crystallization kinetics of Cu 0.3 (SSe 20 ) 0.7 chalcogenide glass were investigated using differential scanning calorimetry (DSC), X-ray diffraction (XRD). Two crystalline phases (SSe 20 and Cu 2 Se) were identified after annealing the glass at 773 K for 24 h. The activation energy of the glass transition (E g ), the activation energy of crystallization (E c ), the Avrami exponent (n) and the dimensionality of growth (m) were determined. Results indicate that this glass crystallizes by a two-stage bulk crystallization process upon heating. The first transformation, in which SSe 20 precipitates from the amorphous matrix with a three-dimensional crystal growth. The second transformation, in which the residual amorphous phase transforms into Cu 2 Se compound with a two-dimensional crystal growth

Short and medium range structures of 80GeSe2–20Ga2Se3 chalcogenide glasses

Science.gov (United States)

Petracovschi, Elena; Calvez, Laurent; Cormier, Laurent; Le Coq, David; Du, Jincheng

2018-05-01

The short and medium range structures of 80GeSe2–20Ga2Se3 (or Ge23.5Ga11.8Se64.7) chalcogenide glasses have been studied by combining ab initio molecular dynamics (AIMD) simulations and experimental neutron diffraction studies. The structure factor and total correlation function were calculated from glass structures generated from AIMD simulations and compared with neutron diffraction experiments showing reasonable agreement. The atomic structures of ternary chalcogenide glasses were analyzed in detail, and it was found that gallium atoms are four-fold coordinated by selenium (Se) and form [GaSe4] tetrahedra. Germanium atoms on average also have four-fold coordination, among which Se is 3.5 with the remaining being Ge–Ge homo-nuclear bonds. Ga and Ge tetrahedra link together mainly through corner-sharing and some edge-sharing of Se. No homo-nuclear bonds were observed among Ga atoms or between Ge and Ga. In addition, Se–Se homo-nuclear bonds and Se chains with various lengths were observed. A small fraction of Se atom triclusters that bond to three cations of Ge and Ga were also observed, confirming earlier proposals from 77Se solid state nuclear magnetic resonance studies. Furthermore, the electronic structures of ternary chalcogenide glasses were studied in terms of atomic charge and electronic density of states in order to gain insights into the chemical bonding and electronic properties, as well as to provide an explanation of the observed atomic structures in these ternary chalcogenide glasses.

Synthesis and properties of new CdSe-AgI-As2Se3 chalcogenide glasses

International Nuclear Information System (INIS)

Kassem, M.; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.

2011-01-01

Research highlights: → Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As 2 Se 3 system. → Characterization of macroscopic properties of the new CdSe-AgI-As 2 Se 3 glasses. → Far infrared transmission of chalcogenide glasses. → Characterization of the total conductivity of CdSe-AgI-As 2 Se 3 glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As 2 Se 3 system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T g ), crystallisation (T x ), and melting (T m ) temperatures are reported and used to calculate their ΔT = T x - T g and their Hruby, H r = (T x - T g )/(T m - T x ), criteria. Evolution of the total electrical conductivity σ and the room temperature conductivity σ 298 was also studied. The terahertz transparency domain in the 50-600 cm -1 region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

International Nuclear Information System (INIS)

Espiau de Lamaestre, R.

2005-04-01

This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

Energy Technology Data Exchange (ETDEWEB)

Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

2013-04-30

For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

Effect of the Copper on Thermo - Mechanical and Optical Properties of S-Se-Cu Chalcogenide Glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-03-01

The S15Se85-xCux (x = 0, 2, 4, 6, 8) chalcogenide glasses are synthesized using melt quenching technique and the effect of Copper on thermal, mechanical and optical properties of chalcogenide glasses are investigated. The glassy natures of the prepared samples were verified by X-ray diffraction and DSC studies. The optical band gap of the samples is estimated and it is observed that optical band gap is decreased with increasing of the copper content and is discussed in terms of cohesive energy and coordination number. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network and the modulus of Elasticity (E) are calculated in present glasses. The composition dependence of micro hardness is discussed in terms of heat of atomization energy.

Recent Progress In Infrared Chalcogenide Glass Fibers

Science.gov (United States)

Bornstein, A.; Croitoru, N.; Marom, E.

1984-10-01

Chalcogenide glasses containing elements like As, Ge, Sb and Se have been prepared. A new technique of preparing the raw material and subsequently drawing fibers has been devel-oped in order to avoid the forming of oxygen compounds. The fibers have been drawn by cru-cible and rod method from oxygen free raw material inside an Ar atmosphere glove box. The fibers drawn to date with air and glass cladding have a diameter of 50-500 pm and length of several meterd. Preliminary attenuation measurements indicate that the attentuation is better than 0.1 dB/cm and it is not affected even when the fiber is bent to 2 cm circular radius. The fibes were testes a CO laser beam and were not damaged at power densities below 10 kW/2cm2 CW &100 kw/cm using short pulses 75 n sec. The transmitted power density was 0.8 kW/cm2 which is an appropriate value to the needed for cutting and ablation of human tissues.

Neutron diffraction study on the medium and short-range order of ternary chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Neov, S.; Gerasimova, I.; Skordeva, E.; Arsova, D.; Pamukchieva, V.; Mikula, Pavol; Lukáš, Petr; Sonntag, R.

1999-01-01

Roč. 34, - (1999), s. 3669-3676 ISSN 0022-2461 R&D Projects: GA ČR GV202/97/K038 Keywords : neutron diffraction * short-range order * chalcogenide glasses Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.786, year: 1999

Diffusion of Ag ions under random potential barriers in silver-containing chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Stehlík, Štěpán; Shimakawa, K.; Wágner, T.; Frumar, M.

2012-01-01

Roč. 45, č. 20 (2012), s. 1-5 ISSN 0022-3727 Institutional research plan: CEZ:AV0Z10100521 Keywords : Ag ion diffusion * chalcogenide glass * Nyquist plots Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://iopscience.iop.org/0022-3727/45/20/205304/

Ageing effects in As10Se90 chalcogenide glasses induced by gamma-irradiation

International Nuclear Information System (INIS)

Golovchak, R.; Shpotyuk, O.; Shpotyuk, M.; Gorecki, Cz.; Kozdras, A.

2005-01-01

The peculiarities of gamma-induced (Co 60 source, 1.85 MGy absorbed dose) ageing phenomena in As 10 Se 90 chalcogenide glasses are investigated for the first time. The analogy between the observed radiation-induced ageing and the thermally induced one in vitreous selenium is emphasized. Like to thermal treatment, gamma-irradiation leads to an increase in the glass transition temperature and the relaxation rate towards a thermodynamic equilibrium of supercooled liquid, the value of this increase being greater in the case of radiation influence

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

International Nuclear Information System (INIS)

Shpotyuk, O.; Kovalskiy, A.; Jain, H.; Golovchak, R.; Zurawska, A.

2007-01-01

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge 23.5 Sb 11.8 S 64.7 glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

2007-03-15

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France); Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E. [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France)

2011-02-15

Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

Thermal analysis of chalcogenide glasses of the system (As/sub/2Se/sub/3)/sub/(1-x):(Tl/sub/2Se)/sub/x

International Nuclear Information System (INIS)

Majid, C.A.

1987-01-01

In this paper differential thermal analysis (DTA) measurements of chalcogenide glasses of the system (As/sub/2Se/sub/3)/sub/(1-x): (Tl/sub/2Se)/sub/x, with x=0, 0.125, 0.25 and 0.50 are reported. The glass-forming tendencies of these materials have been calculated. The glass-forming tendency of As/sub/2Se/sub/3 has been found to be the highest among the member glasses of this family of chalcogenides. It was found that the glass-forming tendency of As/sub/2Se/sub/3 decreasing gradually at the Tl/sub/2/Se concentration increases. Tl/sub/2Se additions lower the glass transition temperature T/sub/q and the area under the endothermic peak for glass transition temperature, suggesting a tendency for relatively weaker bonding and hence less stability of Tl-rich glass compositions. These studies show that Tl/sub/2Se concentrations result in glasses with progressively higher crystallization tendencies. (author)

Fabrication and characterization of Ge20Sb15Se65 chalcogenide glass rib waveguides for telecommunication wavelengths

International Nuclear Information System (INIS)

Li, Jun; Shen, Xiang; Sun, Junqiang; Vu, Khu; Choi, Duk-Yong; Wang, Rongping; Luther-Davies, Barry; Dai, Shixun; Xu, Tiefeng; Nie, Qiuhua

2013-01-01

We report on the fabrication and optical properties of Ge 20 Sb 15 Se 65 chalcogenide glass rib waveguides on a single photonic chip. Radio-frequency magnetron sputtering method is employed to deposit 1.36-μm-thick films and reactive ion etching with CHF 3 is used to pattern 0.76-μm-deep rib waveguides of 1–4 μm wide with low surface roughness and vertical sidewalls. Using lensed fibers, the insertion losses for rib waveguides of different widths are measured and propagation losses are estimated to be lower than 1 dB/cm. Finite difference method simulations and refractive index/curve fitting are used to observe a moderate normal dispersion of the waveguides at 1550 nm. - Highlights: • RF magnetron sputtering was used to deposit uniform Ge 20 Sb 15 Se 65 thin films. • CHF 3 reactive ion etching of rib waveguides vertical profile and smooth sidewall. • Insertion losses at 1550 nm measured and low propagation losses estimated. • Dispersion engineered by finite difference methods and refractive curve fitting

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

Science.gov (United States)

Zhang, Xianghua; Korolkov, Ilia; Fan, Bo; Cathelinaud, Michel; Ma, Hongli; Adam, Jean-Luc; Merdrignac, Odile; Calvez, Laurent; Lhermite, Hervé; Brizoual, Laurent Le; Pasquinelli, Marcel; Simon, Jean-Jacques

2018-03-01

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2-Sb2Se3-CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Fragility of chalcogenide glass in relation to characteristic temperature T0/Tg

Science.gov (United States)

Shaker, A. M.; Shanker Rao, T.; Lilly Shanker Rao, T.; Venkataraman, K.

2018-03-01

The present study reports the mutual relationship between the fragility index m and the characteristic temperature T0/Tg. The fragility of the chalcogenide amorphous glass of Ge10Se50Te40 is calculated by utilizing glass transition temperature (Tg) measured by DSC (Differential Scanning Calorimetry) at different heating rates (β) in the range 5 to 20 K/min. Vogel-Fulcher-Tammann (VFT) equation is fitted to the data of Tg. In addition to the VFT method, three other methods are also used to evaluate m. The fragility index m of the Ge10Se50Te40 system showed the trend of decrease with increasing heating rate but remained stable around 22 for the heating rate 10 K/min. The value of m for the glass is near the lower limit (m ≈ 16) this indicates the alloy is a strong glass forming material in accordance of Angell’s interpretation of fragility. The calculated values of characteristic temperature T0/Tg is very close to 1 which also indicates that clearly the system is most fragile.

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

Directory of Open Access Journals (Sweden)

Zhang Xianghua

2018-01-01

Full Text Available In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2–Sb2Se3–CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Fabrication of All Glass Bifurcation Microfluidic Chip for Blood Plasma Separation

Directory of Open Access Journals (Sweden)

Hyungjun Jang

2017-02-01

Full Text Available An all-glass bifurcation microfluidic chip for blood plasma separation was fabricated by a cost-effective glass molding process using an amorphous carbon (AC mold, which in turn was fabricated by the carbonization of a replicated furan precursor. To compensate for the shrinkage during AC mold fabrication, an enlarged photoresist pattern master was designed, and an AC mold with a dimensional error of 2.9% was achieved; the dimensional error of the master pattern was 1.6%. In the glass molding process, a glass microchannel plate with negligible shape errors (~1.5% compared to AC mold was replicated. Finally, an all-glass bifurcation microfluidic chip was realized by micro drilling and thermal fusion bonding processes. A separation efficiency of 74% was obtained using the fabricated all-glass bifurcation microfluidic chip.

High-precision measurements of the compressibility of chalcogenide glasses at a hydrostatic pressure up to 9 GPa

Energy Technology Data Exchange (ETDEWEB)

Brazhkin, V. V., E-mail: brazhkin@hppi.troitsk.ru [Vereshchagin Institute of High-Pressure Physics (Russian Federation); Bychkov, E. [Universite du Littoral, LPCA, UMR 8101 CNRS (France); Tsiok, O. B. [Vereshchagin Institute of High-Pressure Physics (Russian Federation)

2016-08-15

The volumes of glassy germanium chalcogenides GeSe{sub 2}, GeS{sub 2}, Ge{sub 17}Se{sub 83}, and Ge{sub 8}Se{sub 92} are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe{sub 2} and GeS{sub 2} glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2–2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe{sub 2} glasses has a pronounced maximum at 3.5–4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms. The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1–2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe{sub 2} glasses. All glasses are characterized by the “loss of memory” of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge{sub 17}Se{sub 83} glasses is 1.5%. The volume of the Ge{sub 8}Se{sub 92} glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge{sub 17}Se{sub 83} and Ge{sub 8}Se{sub 92} glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe{sub 2} glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.

Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses

International Nuclear Information System (INIS)

Sen, S.; Ponader, C.W.; Aitken, B.G.

2001-01-01

The coordination environments of Ge and As atoms in Ge x As y S 1-x-y glasses with x:y=1:2, 1:1, and 2.5:1 and with wide-ranging S contents have been studied with Ge and As K-edge x-ray absorption fine structure spectroscopy. The coordination numbers of Ge and As atoms are found to be 4 and 3, respectively, in all glasses. The first coordination shells of Ge and As atoms in the stoichiometric and S-excess glasses consist of S atoms only, implying the preservation of chemical order at least over the length scale of the first coordination shell. As-As homopolar bonds are found to appear at low and intermediate levels of S deficiency, whereas Ge-Ge bonds are formed only in strongly S-deficient glasses indicating clustering of metal atoms and violation of chemical order in S-deficient glasses. The composition-dependent variation in chemical order in chalcogenide glasses has been hypothesized to result in topological changes in the intermediate-range structural units. The role of such topological transitions in controlling the structure-property relationships in chalcogenide glasses is discussed

Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

The influence of Ge on optical and thermo- mechanical properties of S-Se chalcogenide glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-05-01

S-Se-Ge glasses were prepared by melt quenching method to investigate the effect of Germanium on thermo-mechanical and optical properties of chalcogenide glasses. The glassy nature of the samples has been verified by x-ray diffraction and DSC studies that the samples are glassy in nature. The optical band gap of the samples was estimated by the absorption spectrum fitting method. The optical band gap increased from 1.61 ev for x = 0 sample to 1.90 ev for x = 40 sample and is explained in terms of cohesive energies. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network, as well as the modulus of Elasticity (E) have been calculated for prepared glasses.in present glasses. The variation in these parameters with Ge content correlated with heat of atomization of alloys.

Amorphous chalcogenides advances and applications

CERN Document Server

Wang, Rong Ping

2014-01-01

This book provides a comprehensive overview of the chalcogenide glass science and various applications based on the glasses. It starts with a review on the glass-forming ability of various systems, followed by a discussion on the structural and physical properties of various chalcolgenide glasses and their application in integrated optics. The chapters have been contributed by prominent experts from all over the world, and therefore, the book presents the recent research advances in the area. This book will appeal to anyone who is involved in glass science and technology and glass application.

Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

International Nuclear Information System (INIS)

Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O

2011-01-01

New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As 2 S 3 ) 100-x (Sb 2 S 3 ) x ChG.

Nonlinear optical localization in embedded chalcogenide waveguide arrays

International Nuclear Information System (INIS)

Li, Mingshan; Huang, Sheng; Wang, Qingqing; Chen, Kevin P.; Petek, Hrvoje

2014-01-01

We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm 2 , using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass

Glass forming tendencies of chalcogenides of the system (As2Se3)sub(1-x):(T12Se)sub(x)

International Nuclear Information System (INIS)

Majid, C.A.

1982-07-01

In this paper glass forming capabilities of chalcogenide glasses based on As 2 Se 3 with T1 2 Se concentrations are discussed. The studies were made using the differential thermal analysis (DTA) technique. These studies show that the glass forming tendency of As 2 Se 3 decreases as the concentrations of T1 2 Se molecules are increased. Also these studies show that with addition of T1 2 Se, the glass transition temperature Tsub(g) of As 2 Se 3 decreases, suggesting a tendency for weaker bonding and hence less stability of T1-rich compositions. (author)

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Effect of temperature and pressure on non-linear conduction in GeTeSe chalcogenide glass

International Nuclear Information System (INIS)

El-Mansy, M.K.

1998-01-01

The I-V characteristic curves were studied in the temperature range 301-359 K and pressure range up to 7.15 x 10 9 Pa which illustrate a non-linear behaviour below (high-resistance region) and beyond (negative-resistance region) a breakdown point characterising Ge 27 Te 62 Se 11 chalcogenide glasses. The general behaviour is shifted towards lower voltage and higher current when the ambient temperature and/or the applied pressure were increased. The non-linear behaviour in the pre breakdown region is discussed according to the Poole-Frenkel field emission of electrons from deep traps located at a depth equal to 0.372eV. The analysis of the effect of field on the non-linear conduction in Ge 27 Te 62 Se 11 chalcogenide glass suggests a modification of the energy difference between filled and empty sites, where the effect of pressure suggests a reduction of the energy gap width. The analysis based on simple thermal effects in the region closer to the breakdown point implies the electrothermal process initiating the negative resistance region. The results of post breakdown region (negative-resistance region) imply the electron hopping between filled and empty localised states at Fermi level. The density of localised states is estimated which lies in the range 5.7 x 10 16 -1.84 x 10 18 cm -3 /eV

Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O, E-mail: shpotyukmy@yahoo.com [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 212, Stryjska str., Lviv, 79031 (Ukraine)

2011-04-01

New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As{sub 2}S{sub 3}){sub 100-x}(Sb{sub 2}S{sub 3}){sub x} ChG.

Carbon nanotube-chalcogenide composite

Czech Academy of Sciences Publication Activity Database

Stehlík, Š.; Orava, J.; Kohoutek, T.; Wágner, T.; Frumar, M.; Zima, Vítězslav; Hara, T.; Matsui, Y.; Ueda, K.; Pumera, M.

2010-01-01

Roč. 183, č. 1 (2010), s. 144-149 ISSN 0022-4596 R&D Projects: GA ČR GA203/08/0208 Institutional research plan: CEZ:AV0Z40500505 Keywords : carbon nanotubes * chalcogenide glasses * composites Subject RIV: CA - Inorganic Chemistry Impact factor: 2.261, year: 2010

Chemical sensors in natural water: peculiarities of behaviour of chalcogenide glass electrodes for determination of copper, lead and cadmium ions

International Nuclear Information System (INIS)

Seleznev, B.L.; Legin, A.V.; Vlasov, Yu.G.

1996-01-01

Specific features of chemical sensors (chalcogenide glass and crystal ion-selective electrodes) behaviour have been studied to determine copper (2), lead, cadmium and fluorine in the course of in situ measurements, including long-term uninterrupted testing, for solving the problem of inspection over natural water contamination. 16 refs., 3 figs., 2 tabs

Chalcogenides Metastability and Phase Change Phenomena

CERN Document Server

Kolobov, Alexander V

2012-01-01

A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.

Multimode supercontinuum generation in chalcogenide glass fibres

DEFF Research Database (Denmark)

Kubat, Irnis; Bang, Ole

2016-01-01

Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single...

Mid-infrared volume diffraction gratings in IG2 chalcogenide glass: fabrication, characterization, and theoretical verification

Science.gov (United States)

Butcher, Helen L.; MacLachlan, David G.; Lee, David; Brownsword, Richard A.; Thomson, Robert R.; Weidmann, Damien

2018-02-01

Ultrafast laser inscription (ULI) has previously been employed to fabricate volume diffraction gratings in chalcogenide glasses, which operate in transmission mode in the mid-infrared spectral region. Prior gratings were manufactured for applications in astrophotonics, at wavelengths around 2.5 μm. Rugged volume gratings also have potential use in remote atmospheric sensing and molecular spectroscopy; for these applications, longer wavelength operation is required to coincide with atmospheric transparency windows (3-5 μm) and intense ro-vibrational molecular absorption bands. We report on ULI gratings inscribed in IG2 chalcogenide glass, enabling access to the full 3-5 μm window. High-resolution broadband spectral characterization of fabricated gratings was performed using a Fourier transform spectrometer. The zeroth order transmission was characterized to derive the diffraction efficiency into higher orders, up to the fourth orders in the case of gratings optimized for first order diffraction at 3 μm. The outcomes imply that ULI in IG2 is well suited for the fabrication of volume gratings in the mid infrared, providing the impact of the ULI fabrication parameters on the grating properties are well understood. To develop this understanding, grating modeling was conducted. Parameters studied include grating thickness, refractive index modification, and aspect ratio of the modulation achieved by ULI. Knowledge of the contribution and sensitivity of these parameters was used to inform the design of a 4.3 μm grating expected to achieve > 95% first order efficiency. We will also present the characterization of these latest mid-infrared diffraction gratings in IG2.

Direct femtosecond laser writing of buried infrared waveguides in chalcogenide glasses

Science.gov (United States)

Le Coq, D.; Bychkov, E.; Masselin, P.

2016-02-01

Direct laser writing technique is now widely used in particular in glass, to produce both passive and active photonic devices. This technique offers a real scientific opportunity to generate three-dimensional optical components and since chalcogenide glasses possess transparency properties from the visible up to mid-infrared range, they are of great interest. Moreover, they also have high optical non-linearity and high photo-sensitivity that make easy the inscription of refractive index modification. The understanding of the fundamental and physical processes induced by the laser pulses is the key to well-control the laser writing and consequently to realize integrated photonic devices. In this paper, we will focus on two different ways allowing infrared buried waveguide to be obtained. The first part will be devoted to a very original writing process based on a helical translation of the sample through the laser beam. In the second part, we will report on another original method based on both a filamentation phenomenon and a point by point technique. Finally, we will demonstrate that these two writing techniques are suitable for the design of single mode waveguide for wavelength ranging from the visible up to the infrared but also to fabricate optical components.

Mid-infrared optical properties of chalcogenide glasses within tin-antimony-selenium ternary system.

Science.gov (United States)

Lin, Ruiqiang; Chen, Feifei; Zhang, Xiaoyu; Huang, Yicong; Song, Baoan; Dai, Shixun; Zhang, Xianghua; Ji, Wei

2017-10-16

In this work, we investigated the mid-infrared (MIR) optical properties of selenide (Se-based) chalcogenide glasses (ChGs) within an As- and Ge-free system, namely the environment-friendly and low-cost tin-antimony-selenium (Sn-Sb-Se, SSS) ternary system, which has not been systematically studied to the best of our knowledge. As compared to ChGs within those conventional Se-based systems, SSS ChGs were found to exhibit extended infrared transmittance range as well as larger linear refractive index (n 0 ). Femtosecond Z-scan measurements show the presence of evident three-photon absorption from Urbach absorption of the SSS ChGs at MIR wavelength, which resonantly enhanced the nonlinear refractive behavior and resulted in large nonlinear refractive index (n 2 ).

Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

KAUST Repository

Yang, Xiaoming

2014-12-12

Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

Structure, ionic Conductivity and mobile Carrier Density in Fast Ionic Conducting Chalcogenide Glasses

International Nuclear Information System (INIS)

Wenlong Yao

2006-01-01

This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M 2 S + (0.1 Ga 2 S 3 + 0.9 GeS 2 ) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga 2 S 3 + 0.9 GeS 2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M 2 S + (0.1Ga 2 S 3 + 0.9 GeS 2 ) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na 2 S + B 2 S 3 (x (le) 0.2) glasses by neutron and synchrotron x-ray diffraction. Similar results were obtained both in neutron and synchrotron x-ray diffraction experiments. The results provide direct

Photo-Darkening Kinetics and Structural Anisotropic Modifications in the Chalcogenide Glass Arsenic Trisulfide: a Study of Kinetic X-Ray Absorption Spectroscopy

Science.gov (United States)

Lee, Jay Min

1990-08-01

The purpose of the study is to investigate the mechanisms involved with photo-induced atomic structural modifications in the chalcogenide glass As_2 S_3. This glass exhibits the reversible effects of photo-darkening followed by thermal bleaching. We observed the time behavior of photo-induced properties under the influence of linearly polarized band -gap light. In a macroscopic optical investigation, we monitor optical changes in the photo-darkening process, and in a local structural probe we study kinetic (or time -resolved dispersive) x-ray absorption spectroscopy. Our observations center on kinetic phenomena and structural modifications induced by polarized excitation of lone-pair orbitals in the chalcogenide glass. Experimental results include the following observations: (i) The polarity of the optically induced anisotropy is critically dependent on the intensity and the polarization of the band-gap irradiation beam. (ii) The near edge peak height in x-ray absorption spectra shows subtle but sensitive change during the photo-darkening process. (iii) Photon intensity dependent dichroic kinetics reflect a connection between the optically probed macroscopic property and the x-ray probed local anisotropic structure. Analysis of the x-ray absorption results includes a computer simulation of the polarized absorption spectra. These results suggest that specific structural units tend to orient themselves with respect to the photon polarization. A substantial part of the analysis involves a major effort in dealing with the x-ray kinetic data manipulation and the experimental difficulties caused by a synchrotron instability problem. Based on our observations, we propose a possible mechanism for the observed photo-structural modifications. Through a model of computer relaxed photo-darkening kinetics, we support the notion that a twisting of a specific intermediate range order structure is responsible for local directional variations and global network distortions. In the

Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

International Nuclear Information System (INIS)

Shpotyuk, O.; Ingram, A.; Shpotyuk, M.; Filipecki, J.

2014-01-01

Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ 2 -R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers

Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland); Ingram, A. [Opole University of Technology, 75 Ozimska Str., Opole 45370 (Poland); Shpotyuk, M. [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv 79013 (Ukraine); Filipecki, J. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland)

2014-11-01

Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ{sub 2}-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

New Trends in Amplifiers and Sources via Chalcogenide Photonic Crystal Fibers

Directory of Open Access Journals (Sweden)

L. Mescia

2012-01-01

Full Text Available Rare-earth-doped chalcogenide glass fiber lasers and amplifiers have great applicative potential in many fields since they are key elements in the near and medium-infrared (mid-IR wavelength range. In this paper, a review, even if not exhaustive, on amplification and lasing obtained by employing rare-earth-doped chalcogenide photonic crystal fibers is reported. Materials, devices, and feasible applications in the mid-IR are briefly mentioned.

Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

2006-01-01

This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M₂S + (0.1 Ga₂S₃ + 0.9 GeS₂) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga₂S₃ + 0.9 GeS₂ was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M₂S + (0.1Ga₂S₃ + 0.9 GeS₂) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na₂S + B₂S₃ (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

Structural features of spin-coated thin films of binary AsxS100−x chalcogenide glass system

International Nuclear Information System (INIS)

Cook, J.; Slang, S.; Golovchak, R.; Jain, H.; Vlcek, M.; Kovalskiy, A.

2015-01-01

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As x S 100−x (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As 2 O 3 was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Influence of annealing conditions on the optical and structural properties of spin-coated As(2)S(3) chalcogenide glass thin films.

Science.gov (United States)

Song, Shanshan; Dua, Janesha; Arnold, Craig B

2010-03-15

Spin-coating of chalcogenide glass is a low-cost, scalable method to create optical grade thin films, which are ideal for visible and infrared applications. In this paper, we study the influence of annealing on optical parameters of As(2)S(3) films by examining UV-visible and infrared spectroscopy and correlating the results to changes in the physical properties associated with solvent removal. Evaporation of excess solvent results in a more highly coordinated, denser glass network with higher index and lower absorption. Depending on the annealing temperature and time, index values ranging from n = 2.1 to the bulk value (n = 2.4) can be obtained, enabling a pathway to materials optimization.

Crystallization study of Te–Bi–Se glasses

Indian Academy of Sciences (India)

Unknown

Thermal stability; chalcogenide glasses; glass forming ability; glass transition temperature. 1. Introduction ... as well as their wide technological applications including threshold and ... are other important aspects such as ON-state current,.

Chalcogenide glasses for device application modified by high-energy irradiation

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.

2006-01-01

Full text: Chalcogenide glasses (ChG) or chemical compounds of chalcogen atoms (S, Se or Te, but not O) with some elements from IV-th and V-th groups of the Periodic Table (typically As, Ge, Sb, Bi, etc. ) obtained by melt quenching, are a perspective for application in modern optoelectronics, photonics, telecommunications, acoustic-optics, xerography, lithography, etc. This uniqueness is due to extremely high sensitivity of ChG to external influences, associated, presumably, with high steric flexibility proper to glassy-like network with low average atomic coordination (chalcogen atoms are typically two-fold coordinated in a glassy-like network), relatively large internal free volume and specific lp-character of electronic states localized at a valence-band top. However, at present, the further possibilities for conventional chemical/technological methods to prepare ChG are fully exhausted. One of the steps to resolve this problem is post-technological modification of ChG using possibilities of high-energy irradiation. This work is focused on new advanced radiation-modified ChG for device application in optoelectronics. The attractive practical use of these non-crystalline materials is tightly connected with radiation-induced defect formation processes. For the first time, we consider the possibilities of Raman scattering along with X-ray diffraction and positron annihilation lifetime spectroscopy to characterize microstructural mechanisms of radiation-induced effects in ChG. (authors)

Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides); Synthese assistee par faisceau d'ions d'agregats dans les verres (argent et chalcogenures de plomb)

Energy Technology Data Exchange (ETDEWEB)

Espiau de Lamaestre, R

2005-04-15

This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

Modeling of dispersion engineered chalcogenide rib waveguide for ultraflat mid-infrared supercontinuum generation in all-normal dispersion regime

Science.gov (United States)

Ahmad, H.; Karim, M. R.; Rahman, B. M. A.

2018-03-01

A rigorous numerical investigation has been carried out through dispersion engineering of chalcogenide rib waveguide for near-infrared to mid-infrared ultraflat broadband supercontinuum generation in all-normal group-velocity dispersion regime. We propose a novel design of a 1-cm-long air-clad rib waveguide which is made from {Ge}_{11.5} {As}_{24} {Se}_{64.5} chalcogenide glass as the core with either silica or {Ge}_{11.5} {As}_{24} {S}_{64.5} chalcogenide glass as a lower cladding separately. A broadband ultraflat supercontinuum spanning from 1300 to 1900 nm could be generated when pumped at 1.55 μ {m} with a low input peak power of 100 W. Shifting the pump to 2 μ {m}, the supercontinuum spectra extended in the mid-infrared region up to 3400 nm with a moderate-input peak power of 500 W. To achieve further extension in mid-infrared, we excite our optimized rib waveguide in both the anomalous and all-normal dispersion pumping regions at 3.1 μ {m} with a largest input peak power of 3 kW. In the case of anomalous dispersion region pumping, numerical analysis shows that supercontinuum spectrum can be extended in the mid-infrared up to 10 μ {m}, although this contains high spectral amplitude fluctuations over the entire bandwidth which limits the supercontinuum sources in the field of high precision measurement applications. On the other hand, by optimizing a rib waveguide geometry for pumping in all-normal dispersion region, we are able to generate a smooth and flat-top coherent supercontinuum spectrum with a moderate bandwidth spanning the wavelength range 2-5.5 μ {m} with less than 5 dB spectral fluctuation over the entire output bandwidth. Our proposed design is highly suitable for making on-chip SC light sources for a variety of applications such as biomedical imaging, and environmental and industrial sensing in the mid-infrared region.

Structural features of spin-coated thin films of binary As{sub x}S{sub 100−x} chalcogenide glass system

Energy Technology Data Exchange (ETDEWEB)

Cook, J. [Austin Peay State University, Clarksville, TN 37075 (United States); Slang, S. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Golovchak, R. [Austin Peay State University, Clarksville, TN 37075 (United States); Jain, H. [International Materials Institute for New Functionality in Glass, Lehigh University, Bethlehem, PA 18015 (United States); Vlcek, M. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Kovalskiy, A., E-mail: kovalskyya@apsu.edu [Austin Peay State University, Clarksville, TN 37075 (United States)

2015-08-31

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As{sub x}S{sub 100−x} (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As{sub 2}O{sub 3} was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films.

Thin film metal sensors in fusion bonded glass chips for high-pressure microfluidics

International Nuclear Information System (INIS)

Andersson, Martin; Ek, Johan; Hedman, Ludvig; Johansson, Fredrik; Sehlstedt, Viktor; Stocklassa, Jesper; Snögren, Pär; Pettersson, Victor; Larsson, Jonas; Vizuete, Olivier; Hjort, Klas; Klintberg, Lena

2017-01-01

High-pressure microfluidics offers fast analyses of thermodynamic parameters for compressed process solvents. However, microfluidic platforms handling highly compressible supercritical CO 2 are difficult to control, and on-chip sensing would offer added control of the devices. Therefore, there is a need to integrate sensors into highly pressure tolerant glass chips. In this paper, thin film Pt sensors were embedded in shallow etched trenches in a glass wafer that was bonded with another glass wafer having microfluidic channels. The devices having sensors integrated into the flow channels sustained pressures up to 220 bar, typical for the operation of supercritical CO 2 . No leakage from the devices could be found. Integrated temperature sensors were capable of measuring local decompression cooling effects and integrated calorimetric sensors measured flow velocities over the range 0.5–13.8 mm s −1 . By this, a better control of high-pressure microfluidic platforms has been achieved. (paper)

A monolithic glass chip for active single-cell sorting based on mechanical phenotyping.

Science.gov (United States)

Faigle, Christoph; Lautenschläger, Franziska; Whyte, Graeme; Homewood, Philip; Martín-Badosa, Estela; Guck, Jochen

2015-03-07

The mechanical properties of biological cells have long been considered as inherent markers of biological function and disease. However, the screening and active sorting of heterogeneous populations based on serial single-cell mechanical measurements has not been demonstrated. Here we present a novel monolithic glass chip for combined fluorescence detection and mechanical phenotyping using an optical stretcher. A new design and manufacturing process, involving the bonding of two asymmetrically etched glass plates, combines exact optical fiber alignment, low laser damage threshold and high imaging quality with the possibility of several microfluidic inlet and outlet channels. We show the utility of such a custom-built optical stretcher glass chip by measuring and sorting single cells in a heterogeneous population based on their different mechanical properties and verify sorting accuracy by simultaneous fluorescence detection. This offers new possibilities of exact characterization and sorting of small populations based on rheological properties for biological and biomedical applications.

Numerical study on fabricating rectangle microchannel in microfluidic chips by glass molding process

Science.gov (United States)

Wang, Tao; Chen, Jing; Zhou, Tianfeng

2017-09-01

This paper studied the glass molding process (GMP) for fabricating a typical microstructure of glass microfluidic chips, i. e., rectangle microchannel, on soda-lime glass by finite element method. More than 100 models were established on the platform of Abaqus/Standard. The influence of parameters, i. e., temperature, aspect ratio, side wall angle and friction coefficient on deformation were studied, and the predicted morphology of the molded microchannel were presented as well. The research could provide fundamental experience for optimizing GMP process in the future.

Physico-chemical and optical properties of Er3+-doped and Er3+/Yb3+-co-doped Ge25Ga9.5Sb0.5S65 chalcogenide glass.

Czech Academy of Sciences Publication Activity Database

Himics, D.; Střižík, L.; Holubová, J.; Beneš, L.; Pálka, K.; Frumarová, Božena; Oswald, Jiří; Tverjanovich, A. S.; Wágner, T.

2017-01-01

Roč. 89, č. 4 (2017), s. 429-436 ISSN 0033-4545. [International Conference Solid State Chemistry 2016 /12./. Prague, 18.09.2016-23.09.2016] Institutional support: RVO:61389013 ; RVO:68378271 Keywords : chalcogenide glasses * erbium * Ga-Ge-Sb-S Subject RIV: CA - Inorganic Chemistry; CA - Inorganic Chemistry (FZU-D) OBOR OECD: Inorganic and nuclear chemistry; Inorganic and nuclear chemistry (FZU-D) Impact factor: 2.626, year: 2016

Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

Directory of Open Access Journals (Sweden)

Elnaggar A.M.

2016-12-01

Full Text Available It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes during the laser treatment. Nanocrystallites of CuInS2 and CuZnSnS4 (CZTS were used as chalcogenide materials. The optimization of the laser beam intensities and nanoparticle sizes were explored.

Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

KAUST Repository

San Roman Alerigi, Damian; Anjum, Dalaver H.; Zhang, Yaping; Yang, Xiaoming; Ben Slimane, Ahmed; Ng, Tien Khee; Hedhili, Mohamed N.; Alsunaidi, Mohammad; Ooi, Boon S.

2013-01-01

In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

Flip chip assembly of thinned chips for hybrid pixel detector applications

International Nuclear Information System (INIS)

Fritzsch, T; Zoschke, K; Rothermund, M; Oppermann, H; Woehrmann, M; Ehrmann, O; Lang, K D; Huegging, F

2014-01-01

There is a steady trend to ultra-thin microelectronic devices. Especially for future particle detector systems a reduced readout chip thickness is required to limit the loss of tracking precision due to scattering. The reduction of silicon thickness is performed at wafer level in a two-step thinning process. To minimize the risk of wafer breakage the thinned wafer needs to be handled by a carrier during the whole process chain of wafer bumping. Another key process is the flip chip assembly of thinned readout chips onto thin sensor tiles. Besides the prevention of silicon breakage the minimization of chip warpage is one additional task for a high yield and reliable flip chip process. A new technology using glass carrier wafer will be described in detail. The main advantage of this technology is the combination of a carrier support during wafer processing and the chip support during flip chip assembly. For that a glass wafer is glue-bonded onto the backside of the thinned readout chip wafer. After the bump deposition process the glass-readout chip stack is diced in one step. Finally the glass carrier chip is released by laser illumination after flip chip assembly of the readout chip onto sensor tile. The results of the flip chip assembly process development for the ATLAS IBL upgrade are described more in detail. The new ATLAS FEI4B chip with a size of 20 × 19 mm 2 is flip chip bonded with a thickness of only 150 μm, but the capability of this technology has been demonstrated on hybrid modules with a reduced readout chip thickness of down to 50 μm which is a major step for ultra-thin electronic systems

Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

International Nuclear Information System (INIS)

Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

1987-01-01

Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

Physicochemical properties of new As2Se3–Ag4SSe–CdTe glasses

International Nuclear Information System (INIS)

Aljihmani, Lilia; Vassilev, Venceslav; Hristova-Vasileva, Temenuga; Fidancevska, Emilija

2009-01-01

Chalcogenide glasses from the As 2 Se 3 –Ag 4 SSe–CdTe system were synthesized. The basic physicochemical parameters such as density (d), microhardness (HV) and the temperatures glass transition Tg were measured. Compactness (C) and some thermomechanical characteristics such as volume (Vh) and formation energy (Eh) of micro-voids in the glassy network, as well as the module of elasticity (E) were calculated. A correlation between the composition and properties of the As 2 Se 3 –Ag 4 SSe–CdTe glasses was established and comprehensively discussed. Keywords: chalcogenide glasses, density, microhardness, compactness, elasticity modulus, thermomechanical characteristics

Photoluminescence and ESR of glasses of the Ge-S system

International Nuclear Information System (INIS)

Cernoskova, E.; Cernosek, Z.; Holubova, J.

1999-01-01

In this work the chalcogenide glasses were studied by photoluminescence, electron spin resonance (ESR) as well as optically induce ESR (LESR) methods. Dependence of energy of luminescence and Stokes shift on glass composition was determined

Fluorescence of Er3+ doped La2S3.3Ga2S3 glasses

International Nuclear Information System (INIS)

Reisfeld, R.; Bornstein, A.

1978-01-01

In this paper the authors report the preparation and fluorescence of Er 3+ in chalcogenide glasses. In the oxide glasses it has been shown that the multiphonon transition rates of the RE are independent of the coupling between a given oxide glass and rare earth ion, but dependent exponentially on the number of phonons of highest energy bridging the emitting and next-lower level. It is of interest to establish whether changing the glass matrix will affect the amount of electron phonon coupling. In addition, because of their low phonon energy and high refractive index, the RE doped chalcogenide glasses will form a new type of fluorescent material. This may be of interest in new RE lasers. (Auth.)

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

International Nuclear Information System (INIS)

Shpotyuk, O.

1997-01-01

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

Characterising refractive index dispersion in chalcogenide glasses

DEFF Research Database (Denmark)

Fang, Y.; Sojka, L.; Jayasuriya, D.

2016-01-01

Much effort has been devoted to the study of glasses that contain the chalcogen elements (sulfur, selenium and tellurium) for photonics' applications out to MIR wavelengths. In this paper we describe some techniques for determining the refractive index dispersion characteristics of these glasses...

High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

Energy Technology Data Exchange (ETDEWEB)

Bernacki, Bruce E.

2012-10-05

This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

ac conductivity and dielectric properties of amorphous Se80Te20-xGex chalcogenide glass film compositions

International Nuclear Information System (INIS)

Hegab, N.A.; Afifi, M.A.; Atyia, H.E.; Farid, A.S.

2009-01-01

Thin films of the prepared Se 80 Te 20-x Ge x (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the ω s law, in accordance with the hopping model, s is found to be temperature dependent (s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W m , calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

Prospects of Colloidal Copper Chalcogenide Nanocrystals

NARCIS (Netherlands)

van der Stam, W.; Berends, A.C.; de Mello-Donega, Celso

2016-01-01

Over the past few years, colloidal copper chalcogenide nanocrystals (NCs) have emerged as promising alternatives to conventional Cd and Pb chalcogenide NCs. Owing to their wide size, shape, and composition tunability, Cu chalcogenide NCs hold great promise for several applications, such as

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

International Nuclear Information System (INIS)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A.

1997-01-01

Processes of formation and annihilation of coordination defects in As 2 Se 3 Bi y and (As 2 Se 3 )(Bi 2 Se 3 ) y amorphous chalcogenide semiconductors induced by influence of Co 60 gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As 2 Se 3 Bi y glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

1997-12-31

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

Recent developments in laser glasses

International Nuclear Information System (INIS)

Weber, M.J.

1983-01-01

The past decade has witnessed a proliferation of new glass-forming compositions including oxides, halides, oxyhalides, and chalcogenides. Many of these glasses are applicable to lasers and have greatly expanded the range of optical properties and spectroscopic parameters available to the laser designer. Our knowledge and understanding of many properties of interest for laser action - transparency, linear and nonlinear refractive indices, and damage threshold of the host glass and the absorption spectrum, radiative and nonradiative transition probabilities, fluorescence wavelength, stimulated emission cross section, and spectroscopic inhomogeneities of the lasing ion Nd 3 + - are reviewed

Flip chip assembly of thinned chips for hybrid pixel detector applications

CERN Document Server

Fritzsch, T; Woehrmann, M; Rothermund, M; Huegging, F; Ehrmann, O; Oppermann, H; Lang, K.D

2014-01-01

There is a steady trend to ultra-thin microelectronic devices. Especially for future particle detector systems a reduced readout chip thickness is required to limit the loss of tracking precision due to scattering. The reduction of silicon thickness is performed at wafer level in a two-step thinning process. To minimize the risk of wafer breakage the thinned wafer needs to be handled by a carrier during the whole process chain of wafer bumping. Another key process is the flip chip assembly of thinned readout chips onto thin sensor tiles. Besides the prevention of silicon breakage the minimization of chip warpage is one additional task for a high yield and reliable flip chip process. A new technology using glass carrier wafer will be described in detail. The main advantage of this technology is the combination of a carrier support during wafer processing and the chip support during flip chip assembly. For that a glass wafer is glue-bonded onto the backside of the thinned readout chip wafer. After the bump depo...

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, O.; Kozyukhin, S. A.; Shpotyuk, M.; Ingram, A.; Szatanik, R.

2015-01-01

Using As 2 S 3 and AsS 2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Scientific Research Company “Carat” (Ukraine); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Shpotyuk, M. [Scientific Research Company “Carat” (Ukraine); Ingram, A. [Opole Technical University (Poland); Szatanik, R. [Opole University (Poland)

2015-03-15

Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

SPP propagation in nonlinear glass-metal interface

KAUST Repository

Sagor, Rakibul Hasan; Alsunaidi, Mohammad A.; Ooi, Boon S.

2011-01-01

The non-linear propagation of Surface-Plasmon-Polaritons (SPP) in single interface of metal and chalcogenide glass (ChG) is considered. A time domain simulation algorithm is developed using the Finite Difference Time Domain (FDTD) method

Phase change and optical band gap behavior of Se0.8S0.2 chalcogenide glass films

International Nuclear Information System (INIS)

Abdel Rafea, M.; Farid, Huda

2009-01-01

Se 0.8 S 0.2 chalcogenide glass films have been prepared by thermal vacuum evaporation technique with thickness 583 nm. Annealing process at T ≥ 333 K crystallizes the films and nanostructured films are formed. The crystallite size was increased to 24 nm as the annealing temperature increased to 373 K. Orthorhombic crystalline system was identified for the annealed films. SEM micrographs show that films consist of two parallel surfaces and the thickness was determined by cross section imaging. The optical transmittance is characterized by interference patterns as a result of these two parallel surfaces, besides their average value at longer wavelength decreases as a result of annealing process. The band gap, E g is red shifted due to crystallization by annealing. As the phase of the films changes from amorphous to crystalline in the annealing temperature range 333-363 K, a non sharp change of the band gap (E g ) is observed. This change was explained by Brus's model of the energy gap confinement behavior of the nanostructured films. The optical refractive index increases suddenly when the system starts to be crystallized by annealing

Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

International Nuclear Information System (INIS)

Kavetskyy, T.; Vakiv, M.; Shpotyuk, O.

2007-01-01

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge 15.8 As 21 S 63.2 glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition

Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

2007-04-15

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

Surface morphology of spin-coated As-S-Se chalcogenide thin films

Czech Academy of Sciences Publication Activity Database

Kohoutek, T.; Wágner, T.; Orava, J.; Krbal, M.; Fejfar, Antonín; Mates, Tomáš; Kasap, S. O.; Frumar, M.

2007-01-01

Roč. 353, - (2007), s. 1437-1440 ISSN 0022-3093 R&D Projects: GA AV ČR IAA1010316; GA AV ČR IAA1010413 Grant - others:GA ČR(CZ) GA203/05/0524; GAMŠk(CZ) LC523 Program:LC Institutional research plan: CEZ:AV0Z10100521 Keywords : chemical properties * spin coating * infrared glasses * chalcogenides * atomic force and scanning tunneling microscopy * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.319, year: 2007

Linking rigidity transitions with enthalpic changes at the glass transition and fragility: insight from a simple oscillator model.

Science.gov (United States)

Micoulaut, Matthieu

2010-07-21

A low temperature Monte Carlo dynamics of a Keating-like oscillator model is used to study the relationship between the nature of network glasses from the viewpoint of rigidity, the thermal reversibility during the glass transition and the strong-fragile behaviour of glass-forming liquids. The model shows that a Phillips optimal glass formation with minimal enthalpic changes is obtained under a cooling/annealing cycle when the system is optimally constrained by the harmonic interactions, i.e. when it is isostatically rigid. For these peculiar systems with a nearly reversible glass transition, the computed activation energy for relaxation time shows also a minimum, which demonstrates that isostatically rigid glasses are strong (Arrhenius-like) glass-forming liquids. Experiments on chalcogenide and oxide glass-forming liquids are discussed under this new perspective and confirm the theoretical prediction for chalcogenide network glasses whereas limitations of the approach appear for weakly interacting (non-covalent, ionic) systems.

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

1997-12-01

Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

Ultrabroadband terahertz spectroscopy of chalcogenide glasses

DEFF Research Database (Denmark)

Zalkovskij, Maksim; Bisgaard, Christer Zoffmann; Novitsky, Andrey

2012-01-01

and absorption coefficient is found for both glasses. We observe the breakdown of the universal power-law dependence of the absorption coefficient due to atomic vibrations observed at low THz frequencies in disordered materials, and see the transition to localized vibrational dynamics for the As2S3 compound...

Conduction mechanism and the dielectric relaxation process of a-Se75Te25-xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

International Nuclear Information System (INIS)

Yahia, I.S.; Hegab, N.A.; Shakra, A.M.; Al-Ribaty, A.M.

2012-01-01

Se 75 Te 25-x Ga x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185-630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10 2 -10 5 Hz) and in the temperature range (293-333 K). The ac conductivity was found to obey the power low ω s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε 1 and dielectric loss ε 2 are frequency and temperature dependent. The maximum barrier height W m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.

Nonlinear optical response of chalcogenide glassy semiconductors in the IR and THz ranges studied with the femtosecond resolution in time

DEFF Research Database (Denmark)

Romanova, E.; Guizard, S.; Wang, Tianwu

2017-01-01

Two time-resolved experimental methods have been used for characterization of the non-linear optical response of chalcogenide glasses of the system As-S-Se-Te in IR and THz ranges upon excitation by femtosecond laser pulses at 800 nm wavelength. Photoinduced conductivity and refractivity were stu...

Wax-bonding 3D microfluidic chips

KAUST Repository

Gong, Xiuqing; Yi, Xin; Xiao, Kang; Li, Shunbo; Kodzius, Rimantas; Qin, Jianhua; Wen, Weijia

2013-01-01

We report a simple, low-cost and detachable microfluidic chip incorporating easily accessible paper, glass slides or other polymer films as the chip materials along with adhesive wax as the recycling bonding material. We use a laser to cut through the paper or film to form patterns and then sandwich the paper and film between glass sheets or polymer membranes . The hot-melt adhesive wax can realize bridge bonding between various materials, for example, paper, polymethylmethacrylate (PMMA) film, glass sheets, or metal plate. The bonding process is reversible and the wax is reusable through a melting and cooling process. With this process, a three-dimensional (3D) microfluidic chip is achievable by vacuating and venting the chip in a hot-water bath. To study the biocompatibility and applicability of the wax-based microfluidic chip, we tested the PCR compatibility with the chip materials first. Then we applied the wax-paper based microfluidic chip to HeLa cell electroporation (EP ). Subsequently, a prototype of a 5-layer 3D chip was fabricated by multilayer wax bonding. To check the sealing ability and the durability of the chip, green fluorescence protein (GFP) recombinant Escherichia coli (E. coli) bacteria were cultured, with which the chemotaxis of E. coli was studied in order to determine the influence of antibiotic ciprofloxacin concentration on the E. coli migration.

Wax-bonding 3D microfluidic chips

KAUST Repository

Gong, Xiuqing

2013-10-10

We report a simple, low-cost and detachable microfluidic chip incorporating easily accessible paper, glass slides or other polymer films as the chip materials along with adhesive wax as the recycling bonding material. We use a laser to cut through the paper or film to form patterns and then sandwich the paper and film between glass sheets or polymer membranes . The hot-melt adhesive wax can realize bridge bonding between various materials, for example, paper, polymethylmethacrylate (PMMA) film, glass sheets, or metal plate. The bonding process is reversible and the wax is reusable through a melting and cooling process. With this process, a three-dimensional (3D) microfluidic chip is achievable by vacuating and venting the chip in a hot-water bath. To study the biocompatibility and applicability of the wax-based microfluidic chip, we tested the PCR compatibility with the chip materials first. Then we applied the wax-paper based microfluidic chip to HeLa cell electroporation (EP ). Subsequently, a prototype of a 5-layer 3D chip was fabricated by multilayer wax bonding. To check the sealing ability and the durability of the chip, green fluorescence protein (GFP) recombinant Escherichia coli (E. coli) bacteria were cultured, with which the chemotaxis of E. coli was studied in order to determine the influence of antibiotic ciprofloxacin concentration on the E. coli migration.

Magnetic chalcogenides in 3 and lower dimensions

Science.gov (United States)

Furdyna, J. K.; Dong, S.-N.; Lee, S.; Liu, X.; Dobrowolska, M.

2018-06-01

In this article we review magnetic phenomena that occur in the chalcogenide family involving transition metals. Magnetic properties displayed by bulk 3D chalcogenides compounds and alloys produced by equilibrium growth methods are discussed. 2D magnetic chalcogenide systems such as epitaxial films and more complex multilayers, whose formation is made possible by epitaxial methods and/or by van der Waals epitaxy, are presented in detail. We present a brief overview of magnetic effects emerging as the dimensionality of chalcogenide materialss is reduced to 1D (nanowires and related structures) and to zero-D (quantum dots formed by both top-down and bottom-up methods).

Luminescent properties of fluorophosphate glasses with lead chalcogenides molecular clusters

International Nuclear Information System (INIS)

Kolobkova, E.V.; Kukushkin, D.S.; Nikonorov, N.V.; Shakhverdov, T.A.; Sidorov, A.I.; Vasiliev, V.N.

2015-01-01

Fluorophosphate glasses containing lead, selenium, and sulfur exhibit an intense luminescence in the 400–620 nm spectral region when excited by the 240–420 nm radiation. This luminescence is due to the presence of (PbSe) n and/or (PbS) n molecular clusters in the glasses, which appear in the as-prepared glasses before quantum dots formation. The thermal treatment at temperatures less than the glass transition temperature results in the red-shift of the luminescence bands and in an increase in the luminescence intensity. Heating the thermally treated glass samples leads to the reversible thermal quenching of the luminescence. - Highlights: • Fluorophosphate glasses with Pb, Se, and S ions contain (PbSe) n or (PbS) n molecular clusters. • (PbSe) n and (PbS) n molecular clusters possess luminescence in the visible with UV excitation. • Heating the glass leads to the reversible thermal quenching of the luminescence

Study of film semiconductor glass-metal interfaces by nuclear methods

International Nuclear Information System (INIS)

Wehr, Muryel.

1979-01-01

The use of nuclear method analysis, particularly α particles and Li + ions elastic backscattering permitted to study the glass chalcogenide-metal interdiffusion submitted to thermal and electric stresses. The 8 MeV alpha particles are of a great interest, they increase five times the depth of the gold analysis in glasses compared with the 3,5 MeV alpha particles [fr

Processing and characterization of new oxysulfide glasses in the Ge-Ga-As-S-O system

International Nuclear Information System (INIS)

Maurel, C.; Petit, L.; Dussauze, M.; Kamitsos, E.I.; Couzi, M.; Cardinal, T.; Miller, A.C.; Jain, H.; Richardson, K.

2008-01-01

New oxysulfide glasses have been prepared in the Ge-Ga-As system employing a two-step melting process which involves the processing of the chalcogenide glass (ChG) and its subsequent melting with amorphous GeO 2 powder. Optical characterization of the synthesized oxysulfide glasses has shown that the cut-off wavelength decreases with increasing oxygen content, and this has been correlated to results of Raman and infrared (IR) spectroscopies which show the formation of new oxysulfide structural units. X-ray photoelectron spectroscopy (XPS) analysis to probe the bonding environment of oxygen atoms in the oxysulfide glass network, has revealed the preferred formation of Ga-O and Ge-O bonds in comparison to As-O bonds. This work has demonstrated that melting a ChG glass with GeO 2 leads to the formation of new oxysulfide glassy materials. - Graphical abstract: In this paper, we explain how new oxysulfide glasses are prepared in the Ge-Ga-As system employing a two-step process: (1) the processing of the chalcogenide glass (ChG) and (2) the re-melting of the ChG with GeO 2 powder. Raman, infrared and XPS spectroscopies show the formation of new oxysulfide structural units

Advances in Mid-IR Fiber Lasers: Tellurite, Fluoride and Chalcogenide

Directory of Open Access Journals (Sweden)

Mario Christian Falconi

2017-06-01

Full Text Available A review on the recent progress in modeling and fabrication of medium infrared (Mid-IR fiber lasers is reported. The main objective is to illustrate some recent examples of continuous wave optical sources at wavelengths longer than those commonly employed in telecom applications and allowing high beam quality. A small number of Mid-IR lasers, among the large variety of schemes, glasses, dopants and pumping schemes reported in literature, is selected on the basis of their slope efficiency and threshold pump power. In particular, tellurite, fluoride and chalcogenide fiber lasers are considered. More details are given with reference to the novel pumping schemes.

Frequency Agile Microwave Photonic Notch Filter in a Photonic Chip

Science.gov (United States)

2016-10-21

Interference mitigation is crucial in modern radiofrequency (RF) communications systems with dynamically changing operating frequencies, such as cognitive...frequency measurement (IFM) system was also explored. 4. Results and discussions: a. High extinction tunable notch filter in a chalcogenide chip [Optica...Figure 2(b, lower). The measured interferer suppression in this case was 47 dB, limited by the noise floor of the measurements . This paper is in the

Crystallization processes in Ge2Sb2Se4Te glass

Czech Academy of Sciences Publication Activity Database

Svoboda, R.; Bezdička, Petr; Gutwirth, J.; Malek, J.

2015-01-01

Roč. 61, JAN (2015), s. 207-214 ISSN 0025-5408 Institutional support: RVO:61388980 Keywords : Chalcogenides * Glass es * Differential scanning calorimetry (DSC) * X-ray diffraction * Crystal structure Subject RIV: CA - Inorganic Chemistry Impact factor: 2.435, year: 2015

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Energy Technology Data Exchange (ETDEWEB)

Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

2015-11-05

Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

Characterization and modeling of microstructured chalcogenide fibers for efficient mid-infrared wavelength conversion.

Science.gov (United States)

Xing, Sida; Grassani, Davide; Kharitonov, Svyatoslav; Billat, Adrien; Brès, Camille-Sophie

2016-05-02

We experimentally demonstrate wavelength conversion in the 2 µm region by four-wave mixing in an AsSe and a GeAsSe chalcogenide photonic crystal fibers. A maximum conversion efficiency of -25.4 dB is measured for 112 mW of coupled continuous wave pump in a 27 cm long fiber. We estimate the dispersion parameters and the nonlinear refractive indexes of the chalcogenide PCFs, establishing a good agreement with the values expected from simulations. The different fiber geometries and glass compositions are compared in terms of performance, showing that GeAsSe is a more suited candidate for nonlinear optics at 2 µm. Building from the fitted parameters we then propose a new tapered GeAsSe PCF geometry to tailor the waveguide dispersion and lower the zero dispersion wavelength (ZDW) closer to the 2 µm pump wavelength. Numerical simulations shows that the new design allows both an increased conversion efficiency and bandwidth, and the generation of idler waves further in the mid-IR regions, by tuning the pump wavelength in the vicinity of the fiber ZDW.

Noble-Metal Chalcogenide Nanotubes

Directory of Open Access Journals (Sweden)

Nourdine Zibouche

2014-10-01

Full Text Available We explore the stability and the electronic properties of hypothetical noble-metal chalcogenide nanotubes PtS2, PtSe2, PdS2 and PdSe2 by means of density functional theory calculations. Our findings show that the strain energy decreases inverse quadratically with the tube diameter, as is typical for other nanotubes. Moreover, the strain energy is independent of the tube chirality and converges towards the same value for large diameters. The band-structure calculations show that all noble-metal chalcogenide nanotubes are indirect band gap semiconductors. The corresponding band gaps increase with the nanotube diameter rapidly approaching the respective pristine 2D monolayer limit.

High surface area graphene-supported metal chalcogenide assembly

Science.gov (United States)

Worsley, Marcus A.; Kuntz, Joshua D.; Orme, Christine A.

2017-04-25

Disclosed here is a method for hydrocarbon conversion, comprising contacting at least one graphene-supported assembly with at least one hydrocarbon feedstock, wherein the graphene-supported assembly comprises (i) a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds and (ii) at least one metal chalcogenide compound disposed on the graphene sheets, wherein the chalcogen of the metal chalcogenide compound is selected from S, Se and Te, and wherein the metal chalcogenide compound accounts for at least 20 wt. % of the graphene-supported assembly.

Pressure dependence of glass transition in As2Te3 glass.

Science.gov (United States)

Ramesh, K

2014-07-24

Amorphous solids prepared from their melt state exhibit glass transition phenomenon upon heating. Viscosity, specific heat, and thermal expansion coefficient of the amorphous solids show rapid changes at the glass transition temperature (Tg). Generally, application of high pressure increases the Tg and this increase (a positive dT(g)/dP) has been understood adequately with free volume and entropy models which are purely thermodynamic in origin. In this study, the electrical resistivity of semiconducting As(2)Te(3) glass at high pressures as a function of temperature has been measured in a Bridgman anvil apparatus. Electrical resistivity showed a pronounced change at Tg. The Tg estimated from the slope change in the resistivity-temperature plot shows a decreasing trend (negative dT(g)/dP). The dT(g)/dP was found to be -2.36 °C/kbar for a linear fit and -2.99 °C/kbar for a polynomial fit in the pressure range 1 bar to 9 kbar. Chalcogenide glasses like Se, As(2)Se(3), and As(30)Se(30)Te(40) show a positive dT(g)/dP which is very well understood in terms of the thermodynamic models. The negative dT(g)/dP (which is generally uncommon in liquids) observed for As(2)Te(3) glass is against the predictions of the thermodynamic models. The Adam-Gibbs model of viscosity suggests a direct relationship between the isothermal pressure derivative of viscosity and the relaxational expansion coefficient. When the sign of the thermal expansion coefficient is negative, dT(g)/dP = Δk/Δα will be less than zero, which can result in a negative dT(g)/dP. In general, chalcogenides rich in tellurium show a negative thermal expansion coefficient (NTE) in the supercooled and stable liquid states. Hence, the negative dT(g)/dP observed in this study can be understood on the basis of the Adams-Gibbs model. An electronic model proposed by deNeufville and Rockstad finds a linear relation between Tg and the optical band gap (Eg) for covalent semiconducting glasses when they are grouped

Conductivity study on GeS2-Ga2S3-AgI-Ag chalcohalide glasses

Czech Academy of Sciences Publication Activity Database

Ren, J.; Yan, Q.; Wágner, T.; Zima, Vítězslav; Frumar, M.; Frumarová, Božena; Chen, G.

2013-01-01

Roč. 114, č. 2 (2013), 023701_1-023701_5 ISSN 0021-8979 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * conductivity Subject RIV: CA - Inorganic Chemistry Impact factor: 2.185, year: 2013

Strongly nonlinear optical glass fibers from noncentrosymmetric phase-change chalcogenide materials.

Science.gov (United States)

Chung, In; Jang, Joon I; Malliakas, Christos D; Ketterson, John B; Kanatzidis, Mercouri G

2010-01-13

We report that the one-dimensional polar selenophosphate compounds APSe(6) (A = K, Rb), which show crystal-glass phase-change behavior, exhibit strong second harmonic generation (SHG) response in both crystal and glassy forms. The crystalline materials are type-I phase-matchable with SHG coefficients chi((2)) of 151.3 and 149.4 pm V(-1) for K(+) and Rb(+) salts, respectively, which is the highest among phase-matchable nonlinear optical (NLO) materials with band gaps over 1.0 eV. The glass of APSe(6) exhibits comparable SHG intensities to the top infrared NLO material AgGaSe(2) without any poling treatments. APSe(6) exhibit excellent mid-IR transparency. We demonstrate that starting from noncentrosymmetric phase-change materials such as APSe(6) (A = K, Rb), we can obtain optical glass fibers with strong, intrinsic, and temporally stable second-order nonlinear optical (NLO) response. The as-prepared glass fibers exhibit SHG and difference frequency generation (DFG) responses over a wide range of wavelengths. Raman spectroscopy and pair distribution function (PDF) analyses provide further understanding of the local structure in amorphous state of KPSe(6) bulk glass and glass fiber. We propose that this approach can be widely applied to prepare permanent NLO glass from materials that undergo a phase-change process.

Electrical and dielectrical properties of As-Se-Te glasses

Czech Academy of Sciences Publication Activity Database

Kubliha, M.; Kalužný, J.; Pedlíková, Jitka; Zavadil, Jiří; Labaš, V.

2007-01-01

Roč. 9, č. 10 (2007), s. 3082-3087 ISSN 1454-4164. [ ANC -3: International Conference on Amourphous and Nanostructured Chalcogenides /3./. Brasov, 02.07.20007-06.07.2007] R&D Projects: GA ČR GA104/02/0799; GA ČR GA104/05/0878 Grant - others:GA SR(SK) APVV-20-043505; GA SR(SK) APVT-20-011304; VEGA(SK) 1/1080/04 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z40320502 Source of funding: V - iné verejné zdroje ; V - iné verejné zdroje ; V - iné verejné zdroje Keywords : chalcogenide glasses * electrical conductivity * transmission * dielectric properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.827, year: 2007

Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films

Science.gov (United States)

Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

2000-01-01

A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Science.gov (United States)

Sushama, D.

2014-10-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er2O3 doped TeO2-WO3-La2O3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Investigations on the structure of Pb-Ge-Se glasses

Science.gov (United States)

Kalra, G.; Upadhyay, M.; Sharma, Y.; Abhaya, S.; Murugavel, S.; Amarendra, G.

2016-05-01

Chalcogenide glasses have attracted much attention because of their potential application in various solid state devices. In the present work, we report here the detailed thermal, structural, microstructural studies on PbxGe42-xSe58 with (0 ≤ x ≤ 20) glasses. The influence of Pb content on the glass transition temperature, specific heat, and non-reversing enthalphy is observed and discussed qualitatively The Raman spectroscopic studies on the all the glass compositions are carried out and deconvoluted into different structural units. The positron annihilation life-time spectroscopy (PALS) studies helped to understand the nature of defect states present in the glassy system and its variation with Pb content. The concentration of charged defect centers is found to increase, whereas the open volume defect concentration decreases with Pb content in these glasses.

Investigations on the structure of Pb-Ge-Se glasses

International Nuclear Information System (INIS)

Kalra, G.; Upadhyay, M.; Sharma, Y.; Murugavel, S.; Abhaya, S.; Amarendra, G.

2016-01-01

Chalcogenide glasses have attracted much attention because of their potential application in various solid state devices. In the present work, we report here the detailed thermal, structural, microstructural studies on Pb x Ge 42-x Se 58 with (0 ≤ x ≤ 20) glasses. The influence of Pb content on the glass transition temperature, specific heat, and non-reversing enthalpy is observed and discussed qualitatively The Raman spectroscopic studies on the all the glass compositions are carried out and deconvoluted into different structural units. The positron annihilation life-time spectroscopy (PALS) studies helped to understand the nature of defect states present in the glassy system and its variation with Pb content. The concentration of charged defect centers is found to increase, whereas the open volume defect concentration decreases with Pb content in these glasses.

Nonlinear Properties of Soft Glass Waveguides

DEFF Research Database (Denmark)

Steffensen, Henrik

-infrared applications and the THz applications. In the mid-infrared, it is investigated whether soft glasses are a suitable candidate for supercontinuum generation (SCG). A few commercially available fluoride fibers are tested for their zero dispersion wavelength (ZDW), a key property when determining the possibility......This thesis builds around the investigation into using soft glass materials for midinfrared and THz applications. Soft glasses is a term that cov ers a wide range of chemical compositions where many are yet to be fully investigated. The work in this thesis is separated in two parts, the mid...... of SCG in a fiber. A group of soft glasses, namely the chalcogenides, are known to display two photon absorption (TPA) which could potentially limit the SCG when this is initiated within the frequency range where this nonlinear process occur. An analytic model is presented to estimate the soliton self...

Materials Characterization of CIGS solar cells on Top of CMOS chips

NARCIS (Netherlands)

Lu, J.; Liu, W.; Kovalgin, A.Y.; Sun, Y.; Schmitz, J.; Venkatasubramanian, R.; Radousky, H.; Liang, H.

2011-01-01

In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement

Metastable states in amorphous chalcogenide semiconductors

CERN Document Server

Mikla, Victor I

2009-01-01

This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

Recent Advances in Layered Metal Chalcogenides as Superconductors and Thermoelectric Materials: Fe-Based and Bi-Based Chalcogenides.

Science.gov (United States)

Mizuguchi, Yoshikazu

2016-04-01

Recent advances in layered (Fe-based and Bi-based) chalcogenides as superconductors or functional materials are reviewed. The Fe-chalcogenide (FeCh) family are the simplest Fe-based high-Tc superconductors. The superconductivity in the FeCh family is sensitive to external or chemical pressure, and high Tc is attained when the local structure (anion height) is optimized. The Bi-chalcogenide (BiCh2) family are a new group of layered superconductors with a wide variety of stacking structures. Their physical properties are also sensitive to external or chemical pressure. Recently, we revealed that the emergence of superconductivity and the Tc in this family correlate with the in-plane chemical pressure. Since the flexibility of crystal structure and electronic states are an advantage of the BiCh2 family for designing functionalities, I briefly review recent developments in this family as not only superconductors but also other functional materials. © 2016 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microneedle Array Interface to CE on Chip

NARCIS (Netherlands)

Lüttge, Regina; Gardeniers, Johannes G.E.; Vrouwe, E.X.; van den Berg, Albert; Northrup, M.A.; Jensen, K.F; Harrison, D.J.

2003-01-01

This paper presents a microneedle array sampler interfaced to a capillary electrophoresis (CE) glass chip with integrated conductivity detection electrodes. A solution of alkali ions was electrokinetically loaded through the microneedles onto the chip and separation was demonstrated compared to a

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Energy Technology Data Exchange (ETDEWEB)

Sushama, D., E-mail: sushasukumar@gmail.com [Research Awardee, LAMP, Dept. of Physics, Nit, Calicut, India and Dept. of Physics, M.S.M. College, Kayamkulam, Kerala (India)

2014-10-15

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er{sub 2}O{sub 3} doped TeO{sub 2}‐WO{sub 3}‐La{sub 2}O{sub 3} Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

International Nuclear Information System (INIS)

Sushama, D.

2014-01-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er 2 O 3 doped TeO 2 ‐WO 3 ‐La 2 O 3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption

Effect of Slice Error of Glass on Zero Offset of Capacitive Accelerometer

Science.gov (United States)

Hao, R.; Yu, H. J.; Zhou, W.; Peng, B.; Guo, J.

2018-03-01

Packaging process had been studied on capacitance accelerometer. The silicon-glass bonding process had been adopted on sensor chip and glass, and sensor chip and glass was adhered on ceramic substrate, the three-layer structure was curved due to the thermal mismatch, the slice error of glass lead to asymmetrical curve of sensor chip. Thus, the sensitive mass of accelerometer deviated along the sensitive direction, which was caused in zero offset drift. It was meaningful to confirm the influence of slice error of glass, the simulation results showed that the zero output drift was 12.3×10-3 m/s2 when the deviation was 40μm.

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

International Nuclear Information System (INIS)

Vu, K. T.; Madden, S. J.

2011-01-01

The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

Investigations on the structure of Pb-Ge-Se glasses

Energy Technology Data Exchange (ETDEWEB)

Kalra, G.; Upadhyay, M.; Sharma, Y.; Murugavel, S., E-mail: murug@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi – 110007 (India); Abhaya, S.; Amarendra, G. [Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102 (India)

2016-05-23

Chalcogenide glasses have attracted much attention because of their potential application in various solid state devices. In the present work, we report here the detailed thermal, structural, microstructural studies on Pb{sub x}Ge{sub 42-x}Se{sub 58} with (0 ≤ x ≤ 20) glasses. The influence of Pb content on the glass transition temperature, specific heat, and non-reversing enthalpy is observed and discussed qualitatively The Raman spectroscopic studies on the all the glass compositions are carried out and deconvoluted into different structural units. The positron annihilation life-time spectroscopy (PALS) studies helped to understand the nature of defect states present in the glassy system and its variation with Pb content. The concentration of charged defect centers is found to increase, whereas the open volume defect concentration decreases with Pb content in these glasses.

Thermochemical and structural characterization of GeSe2-Sb2Se3-ZnSe glasses

Czech Academy of Sciences Publication Activity Database

Ivanova, Z.; Černošková, Eva; Vassilev, V. S.; Boycheva, S. V.

2003-01-01

Roč. 57, č. 5-6 (2003), s. 1025-1028 ISSN 0167-577X R&D Projects: GA ČR GA203/99/0046 Keywords : chalcogenide glasses * microstucture * physicochemical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.774, year: 2003

Low-temperature bonding process for the fabrication of hybrid glass-membrane organ-on-a-chip devices

Science.gov (United States)

Pocock, Kyall J.; Gao, Xiaofang; Wang, Chenxi; Priest, Craig; Prestidge, Clive A.; Mawatari, Kazuma; Kitamori, Takehiko; Thierry, Benjamin

2016-10-01

The integration of microfluidics with living biological systems has paved the way to the exciting concept of "organs-on-a-chip," which aims at the development of advanced in vitro models that replicate the key features of human organs. Glass-based devices have long been utilized in the field of microfluidics but the integration of alternative functional elements within multilayered glass microdevices, such as polymeric membranes, remains a challenge. To this end, we have extended a previously reported approach for the low-temperature bonding of glass devices that enables the integration of a functional polycarbonate porous membrane. The process was initially developed and optimized on specialty low-temperature bonding equipment (μTAS2001, Bondtech, Japan) and subsequently adapted to more widely accessible hot embosser units (EVG520HE Hot Embosser, EVG, Austria). The key aspect of this method is the use of low temperatures compatible with polymeric membranes. Compared to borosilicate glass bonding (650°C) and quartz/fused silica bonding (1050°C) processes, this method maintains the integrity and functionality of the membrane (Tg 150°C for polycarbonate). Leak tests performed showed no damage or loss of integrity of the membrane for up to 150 h, indicating sufficient bond strength for long-term cell culture. A feasibility study confirmed the growth of dense and functional monolayers of Caco-2 cells within 5 days.

Chalcogenide phase-change thin films used as grayscale photolithography materials.

Science.gov (United States)

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

Power-efficient production of photon pairs in a tapered chalcogenide microwire

Energy Technology Data Exchange (ETDEWEB)

Meyer-Scott, Evan, E-mail: emeyersc@uwaterloo.ca; Dot, Audrey [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Ahmad, Raja; Li, Lizhu; Rochette, Martin [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montréal, Québec H3A 2A7 (Canada); Jennewein, Thomas [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Quantum Information Science Program, Canadian Institute for Advanced Research, 180 Dundas Street West, Suite 1400, Toronto, Ontario M5G 1Z8 (Canada)

2015-02-23

Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

Positron annihilation lifetime spectroscopy in application to nanostructured glasses and ceramics

OpenAIRE

Klym, Halyna; Kostiv, Yuriy

2017-01-01

Modified nanostructured Ge-Ga-Se chalcogenide glasses and oxide MgO-Al2O3 ceramics were investigated using positron annihilation lifetime spectroscopy. It was shown that crystallization process in 80GeSe2-20Ga2Se3 glasses annealed at 380°C for 25 and 50 h indicates specific free-volume transformation. It is established that water vapor modifies defects located near grain boundaries in MgO-Al2O3 ceramics sintered at 1300 °C, the process being accompanied by void fragmen...

Uptake of hazardous radionuclides within layered chalcogenide for environmental protection

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Pranesh, E-mail: praneshsengupta@gmail.com [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Dudwadkar, N.L. [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Vishwanadh, B. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Pulhani, V. [Health Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Rao, Rekha [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Tripathi, S.C. [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Dey, G.K. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2014-02-15

Highlights: • Layered chalcogenide with CdI{sub 2} crystal structure prepared by hydrothermal route. • Exploration of the possibilities for radionuclides’ uptake using layered chalcogenide. • Proposing ‘topotactic ionic substitution’ as major uptake mechanism. -- Abstract: Ensuring environmental protection in and around nuclear facilities is a matter of deep concern. Toward this, layered chalcogenide with CdI{sub 2} crystal structure has been prepared. Structural characterizations of layered chalcogenide suggest ‘topotactic ionic substitution’ as the dominant mechanism behind uptake of different cations within its lattice structure. An equilibration time of 45 min and volume to mass ratio of 30:1 are found to absorb {sup 233}U, {sup 239}Pu, {sup 106}Ru, {sup 85+89}Sr, {sup 137}Cs and {sup 241}Am radionuclides to the maximum extents.

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

Czech Academy of Sciences Publication Activity Database

Messaddeq, S. H.; Li, M. S.; Ležal, Dimitrij; Messaddeq, Y.

2002-01-01

Roč. 4, č. 2 (2002), s. 375-380 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z4032918 Keywords : light-induced effects * chalcogenide glasses * relief gratings Subject RIV: CA - Inorganic Chemistry Impact factor: 0.446, year: 2002

The Design, Fabrication and Characterization of a Transparent Atom Chip

Directory of Open Access Journals (Sweden)

Ho-Chiao Chuang

2014-06-01

Full Text Available This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments.

The Design, Fabrication and Characterization of a Transparent Atom Chip

Science.gov (United States)

Chuang, Ho-Chiao; Huang, Chia-Shiuan; Chen, Hung-Pin; Huang, Chi-Sheng; Lin, Yu-Hsin

2014-01-01

This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments. PMID:24922456

Metal chalcogenide nanostructures for renewable energy applications

CERN Document Server

Qurashi, Ahsanulhaq

2014-01-01

This first ever reference book that focuses on metal chalcogenide semiconductor nanostructures for renewable energy applications encapsulates the state-of-the-art in multidisciplinary research on the metal chalcogenide semiconductor nanostructures (nanocrystals, nanoparticles, nanorods, nanowires,  nanobelts, nanoflowers, nanoribbons and more).  The properties and synthesis of a class of nanomaterials is essential to renewable energy manufacturing and this book focuses on the synthesis of metal chalcogendie nanostructures, their growth mechanism, optical, electrical, and other important prop

Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films

International Nuclear Information System (INIS)

Khan, Shamshad A.; Khan, Zishan H.; El-Sebaii, A.A.; Al-Marzouki, F.M.; Al-Ghamdi, A.A.

2010-01-01

(PbSe) 100-x Cd x thin films of thickness 3000 A with variable concentrations of Cd (x=5, 10, 15 and 20) were prepared by thermal evaporation on glass substrates at room temperature at a base pressure of 10 -6 Torr. The structural, optical and electrical properties of these films were studied. X-ray diffraction patterns were used to determine the crystal structure of the films. Films were of polycrystalline texture over the whole range of study. Optical constants of all films were determined by absorbance and reflection measurements in a wavelength range 400-1200 nm. Analysis of the optical absorption data showed that the rule of direct transitions predominates. The values of the absorption coefficient (α), extinction coefficient (k) and imaginary part of the dielectric constant were found to increase with increasing Cd content in lead chalcogenides while the refractive index (n) and real part of dielectric constant were increased with increasing Cd concentration up to 15% and then they decreased with 20% of Cd content in PbSe. These results were interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities and activation energies of the films were measured in the temperature range 298-398 K. It was observed that the dc conductivity increases at all temperatures with the increase of Cd content in lead chalcogenide system. The experimental data suggests that the conduction is due to the thermally assisted tunneling of the carriers in the localized states near the band edges. The activation energy and optical band gap were found to decrease with increasing Cd concentration in lead chalcogenide.

Iron chalcogenide superconductors at high magnetic fields

Science.gov (United States)

Lei, Hechang; Wang, Kefeng; Hu, Rongwei; Ryu, Hyejin; Abeykoon, Milinda; Bozin, Emil S; Petrovic, Cedomir

2012-01-01

Iron chalcogenide superconductors have become one of the most investigated superconducting materials in recent years due to high upper critical fields, competing interactions and complex electronic and magnetic phase diagrams. The structural complexity, defects and atomic site occupancies significantly affect the normal and superconducting states in these compounds. In this work we review the vortex behavior, critical current density and high magnetic field pair-breaking mechanism in iron chalcogenide superconductors. We also point to relevant structural features and normal-state properties. PMID:27877518

Thermal effects on light emission in Yb3+ -sensitized rare-earth doped optical glasses

International Nuclear Information System (INIS)

Gouveia, E.A.; Araujo, M.T. de; Gouveia-Neto, A.S.

2001-01-01

The temperature effect upon infrared-to-visible frequency upconversion fluorescence emission in off-resonance infrared excited Yb 3+ -sensitized rare-earth doped optical glasses is theoretically and experimentally investigated. We have examined samples of Er3+/Yb 3+ -codoped Ga 2 S 3 :La 2 O 3 chalcogenide glasses and germanosilicate optical fibers, and Ga2O3:La 2 O 3 chalcogenide and fluoroindate glasses codoped with Pr 3+ /Yb 3+ , excited off-resonance at 1.064μm. The experimental results revealed thermal induced enhancement in the visible upconversion emission intensity as the samples temperatures were increased within the range of 20 deg C to 260 deg C. The fluorescence emission enhancement is attributed to the temperature dependent multiphonon-assisted anti-Stokes excitation process of the ytterbium-sensitizer. A theoretical approach that takes into account a sensitizer temperature dependent effective absorption cross section, which depends upon the phonon occupation number in the host matrices, has proven to agree very well with the experimental data. As beneficial applications of the thermal enhancement, a temperature tunable amplifier and a fiber laser with improved power performance are presented. (author)

Low-temperature bonded glass-membrane microfluidic device for in vitro organ-on-a-chip cell culture models

Science.gov (United States)

Pocock, Kyall J.; Gao, Xiaofang; Wang, Chenxi; Priest, Craig; Prestidge, Clive A.; Mawatari, Kazuma; Kitamori, Takehiko; Thierry, Benjamin

2015-12-01

The integration of microfluidics with living biological systems has paved the way to the exciting concept of "organson- a-chip", which aims at the development of advanced in vitro models that replicate the key features of human organs. Glass based devices have long been utilised in the field of microfluidics but the integration of alternative functional elements within multi-layered glass microdevices, such as polymeric membranes, remains a challenge. To this end, we have extended a previously reported approach for the low-temperature bonding of glass devices that enables the integration of a functional polycarbonate porous membrane. The process was initially developed and optimised on specialty low-temperature bonding equipment (μTAS2001, Bondtech, Japan) and subsequently adapted to more widely accessible hot embosser units (EVG520HE Hot Embosser, EVG, Austria). The key aspect of this method is the use of low temperatures compatible with polymeric membranes. Compared to borosilicate glass bonding (650 °C) and quartz/fused silica bonding (1050 °C) processes, this method maintains the integrity and functionality of the membrane (Tg 150 °C for polycarbonate). Leak tests performed showed no damage or loss of integrity of the membrane for up to 150 hours, indicating sufficient bond strength for long term cell culture. A feasibility study confirmed the growth of dense and functional monolayers of Caco-2 cells within 5 days.

Solvent properties of hydrazine in the preparation of metal chalcogenide bulk materials and films.

Science.gov (United States)

Yuan, Min; Mitzi, David B

2009-08-21

A combination of unique solvent properties of hydrazine enables the direct dissolution of a range of metal chalcogenides at ambient temperature, rendering this an extraordinarily simple and soft synthetic approach to prepare new metal chalcogenide-based materials. The extended metal chalcogenide parent framework is broken up during this process, and the resulting metal chalcogenide building units are re-organized into network structures (from 0D to 3D) based upon their interactions with the hydrazine/hydrazinium moieties. This Perspective will review recent crystal and materials chemistry developments within this family of compounds and will briefly discuss the utility of this approach in metal chalcogenide thin-film deposition.

Molecular dynamics simulations of disordered materials from network glasses to phase-change memory alloys

CERN Document Server

Massobrio, Carlo; Bernasconi, Marco; Salmon, Philip S

2015-01-01

This book is a unique reference work in the area of atomic-scale simulation of glasses. For the first time, a highly selected panel of about 20 researchers provides, in a single book, their views, methodologies and applications on the use of molecular dynamics as a tool to describe glassy materials. The book covers a wide range of systems covering ""traditional"" network glasses, such as chalcogenides and oxides, as well as glasses for applications in the area of phase change materials. The novelty of this work is the interplay between molecular dynamics methods (both at the classical and firs

Local atomic structure and electrical properties of Ge(20)Se(80-x)Te(x) (x=0, 5, 10, and 15) glasses doped with Ho

Czech Academy of Sciences Publication Activity Database

Kubliha, M.; Kostka, Petr; Trnovcová, V.; Zavadil, Jiří; Bednarčík, J.; Labas, V.; Pedlíková, Jitka; Dippel, A.C.; Liermann, H.P.; Psota, J.

2014-01-01

Roč. 586, FEB 15 (2014), s. 308-313 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * crystal phase * electrical and dielectric properties * structure Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.999, year: 2014

Application of positron annihilation lifetime technique for {gamma}-irradiation stresses study in chalcogenide vitreous semiconductors

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Golovchak, R.; Kovalskiy, A. [Scientific Research Company ' ' Carat' ' , Stryjska str. 20279031 Lviv (Ukraine); Filipecki, J.; Hyla, M. [Physics Institute, Pedagogical University, Al. Armii Krajowej 13/1542201 Czestochowa (Poland)

2002-08-01

The influence of {gamma}-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and {gamma}-induced open volume defects. It is concluded that after {gamma}-irradiation of investigated materials the {gamma}-induced microvoids based on S{sub 1}{sup -}, As{sub 2}{sup -}, and Ge{sub 3}{sup -} coordination defects play the major role in positron annihilation processes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

Reducing the Edge Chipping for Capillary End Face Grinding and Polishing

Directory of Open Access Journals (Sweden)

Hošek J.

2013-05-01

Full Text Available This paper presents results of glass capillary end face grinding and polishing by approach that reduces the edge chipping. Brittle materials have natural tendency for edge chipping what leads to beveling the sharp edges. Not beveled sharp edges on glass capillary are important for special applications like surface tension measurement of small liquid samples. We use common grinding and polishing process for capillary end face machining modified with gradual decreasing of grinding load based on the relation of the critical chipping load. Achieved surface roughness is measured using atomic force microscopy (AFM. Capillary inner edge quality is checked both with optical microscopes and electron microscope too. We achieved a non-chipped capillary inner edge with radius down to 100 nm.

Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

2012-08-15

Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

Thermal transformation properties in some glasses of the system As2Se5-As2Te5

International Nuclear Information System (INIS)

Kotkata, M.F.; El-Den, M.B.

1983-07-01

The phenomena accompanying the temperature-induced structural changes in several glasses of the chalcogenide alloy system AsSesub(2.5-x)Tesub(x), with x=0 to x=2, have been studied by differential thermal analysis. Observations of the glass transition temperature, the temperature of crystallization and the temperature of melting through consecutive thermal cycles were made. A number of kinetic parameters for the devitrification processes has been determined and discussed. (author)

Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

International Nuclear Information System (INIS)

Qiao, Li-Na; Wang, H.C.; Shen, Y.; Lin, Yuan-Hua; Nan, Ce-Wen

2016-01-01

Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors

Long-term physical ageing in As-Se glasses with short chalcogen chains

International Nuclear Information System (INIS)

Golovchak, R; Shpotyuk, O; Kozdras, A; Vlcek, M; Bureau, B; Kovalskiy, A; Jain, H

2008-01-01

Long-term physical ageing of chalcogenide glasses, which occurs over tens of years, is much less understood than the short-term ageing. With Se-rich underconstrained As 30 Se 70 glass as a model composition (consisting of Se n chains with n≤3 on average), a microscopic model is developed for this phenomenon by combining information from differential scanning calorimetry, extended x-ray absorption fine structure, Raman, and 77 Se solid state nuclear magnetic resonance spectroscopies. The accompanying changes in the electronic structure of these glasses are investigated by x-ray photoelectron spectroscopy. The data suggest ageing from cooperative relaxation, presumably involving bond switching or reconfiguration of As-Se-Se-As fragments

Long-term physical ageing in As-Se glasses with short chalcogen chains

Energy Technology Data Exchange (ETDEWEB)

Golovchak, R; Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska street, Lviv, UA-79031 (Ukraine); Kozdras, A [Faculty of Physics of Opole University of Technology, 75, Ozimska street, Opole, 45370 (Poland); Vlcek, M [Department of General and Inorganic Chemistry, Faculty of Chemistry, University of Pardubice, 532 10 Pardubice (Czech Republic); Bureau, B [Verres et Ceramiques, UMR CNRS 6226 Sciences Chimiques de Rennes, University of Rennes, 1, Campus de Beaulieu, Rennes, 35042 (France); Kovalskiy, A; Jain, H [Department of Materials Science and Engineering, Lehigh University, 5, East Packer Avenue, Bethlehem, PA 18015-3195 (United States)

2008-06-18

Long-term physical ageing of chalcogenide glasses, which occurs over tens of years, is much less understood than the short-term ageing. With Se-rich underconstrained As{sub 30}Se{sub 70} glass as a model composition (consisting of Se{sub n} chains with n{<=}3 on average), a microscopic model is developed for this phenomenon by combining information from differential scanning calorimetry, extended x-ray absorption fine structure, Raman, and {sup 77}Se solid state nuclear magnetic resonance spectroscopies. The accompanying changes in the electronic structure of these glasses are investigated by x-ray photoelectron spectroscopy. The data suggest ageing from cooperative relaxation, presumably involving bond switching or reconfiguration of As-Se-Se-As fragments.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

International Nuclear Information System (INIS)

Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

2011-01-01

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

Energy Technology Data Exchange (ETDEWEB)

Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

2011-04-15

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

Energy Technology Data Exchange (ETDEWEB)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

2015-03-16

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

International Nuclear Information System (INIS)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

2015-01-01

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

Energy Transfer between Post-Transition Elements & Rare Earths in Oxide & Chalcogenide Glasses.

Science.gov (United States)

1979-08-27

Caird [13]. A calculation of reduced matrix elements of Pr3 in 20 Na O • 80 TeO2 glass [14] showed that they differ slightly from data of ref. [121... glasses Transition (lass 35 ZnO 65 TeO2 20 Na2 O 80 TeO 2 fX 106 fX 106 l.,eas 3a, a) Ia’l. faI f.me.s f al f+ I fal 3 H4 - 3 H6 1.56 1.65 1.12...Rare-Earth Doped Glasses 20. jIST HAEV CCnFn~m ,i cn,on ra e sideit If c."*Ar’ -- ~ 14-r by t?-h.c .: r Intensity parameters, radiative transition

Thulium pumped mid-infrared 0.9–9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers

DEFF Research Database (Denmark)

Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech

2014-01-01

of ZBLAN spanning the 0.9–4.1μm SC at the −30dB level. The ZBLAN fiber SC is then coupled into 10cm of As2Se3 chalcogenide Microstructured Optical Fiber (MOF) designed to have a zero-dispersion wavelength (λZDW) significantly below the 4.1μm InfraRed (IR) edge of the ZBLAN fiber SC, here 3.55μm...

SPP propagation in nonlinear glass-metal interface

KAUST Repository

Sagor, Rakibul Hasan

2011-12-01

The non-linear propagation of Surface-Plasmon-Polaritons (SPP) in single interface of metal and chalcogenide glass (ChG) is considered. A time domain simulation algorithm is developed using the Finite Difference Time Domain (FDTD) method. The general polarization algorithm incorporated in the auxiliary differential equation (ADE) is used to model frequency-dependent dispersion relation and third-order nonlinearity of ChG. The main objective is to observe the nonlinear behavior of SPP propagation and study the dynamics of the whole structure. © 2011 IEEE.

Nanofiber Anisotropic Conductive Films (ACF) for Ultra-Fine-Pitch Chip-on-Glass (COG) Interconnections

Science.gov (United States)

Lee, Sang-Hoon; Kim, Tae-Wan; Suk, Kyung-Lim; Paik, Kyung-Wook

2015-11-01

Nanofiber anisotropic conductive films (ACF) were invented, by adapting nanofiber technology to ACF materials, to overcome the limitations of ultra-fine-pitch interconnection packaging, i.e. shorts and open circuits as a result of the narrow space between bumps and electrodes. For nanofiber ACF, poly(vinylidene fluoride) (PVDF) and poly(butylene succinate) (PBS) polymers were used as nanofiber polymer materials. For PVDF and PBS nanofiber ACF, conductive particles of diameter 3.5 μm were incorporated into nanofibers by electrospinning. In ultra-fine-pitch chip-on-glass assembly, insulation was significantly improved by using nanofiber ACF, because nanofibers inside the ACF suppressed the mobility of conductive particles, preventing them from flowing out during the bonding process. Capture of conductive particles was increased from 31% (conventional ACF) to 65%, and stable electrical properties and reliability were achieved by use of nanofiber ACF.

A Peristaltic Pump Integrated on a 100% Glass Microchip Using Computer Controlled Piezoelectric Actuators

Directory of Open Access Journals (Sweden)

Yo Tanaka

2014-05-01

Full Text Available Lab-on-a-chip technology is promising for the miniaturization of chemistry, biochemistry, and/or biology researchers looking to exploit the advantages of a microspace. To manipulate fluid on a microchip, on-chip pumps are indispensable. To date, there have been several types of on-chip pumps including pneumatic, electroactive, and magnetically driven. However these pumps introduce polymers, metals, and/or silicon to the microchip, and these materials have several disadvantages, including chemical or physical instability, or an inherent optical detection limit. To overcome/avoid these issues, glass has been one of the most commonly utilized materials for the production of multi-purpose integrated chemical systems. However, glass is very rigid, and it is difficult to incorporate pumps onto glass microchips. This paper reports the use of a very flexible, ultra-thin glass sheet (minimum thickness of a few micrometers to realize a pump installed on an entirely glass-based microchip. The pump is a peristaltic-type, composed of four serial valves sealing a cavity with two penetrate holes using ultra-thin glass sheet. By this pump, an on-chip circulating flow was demonstrated by directly observing fluid flow, visualized via polystyrene tracking particles. The flow rate was proportional to the pumping frequency, with a maximum flow rate of approximately 0.80 μL/min. This on-chip pump could likely be utilized in a wide range of applications which require the stability of a glass microchip.

Similarity in the superconducting properties of chalcogenides, cuprate oxides and fullerides

International Nuclear Information System (INIS)

Tsendin, K.D.; Popov, B.P.; Denisov, D.V.

2004-01-01

The idea of Anderson pairs has been put forward for explanation of many extraordinary properties of chalcogenides glassy semiconductors. Recent decades made obvious that these pairs localized on the centers with negative effective correlation energy (negative-U centers) really exist in chalcogenides. If the concentration of negative-U centers is enough to create the pair band states, this can lead to superconductivity because Anderson pairs are Bose particles. In the present paper we show that several puzzling superconductivity properties of chalcogenides, high-temperature cuprate superconductors and fullerides are similar for these three groups of materials and can be naturally explained in the frame of negative-U centers model of superconductivity

Static structure of superionic conducting glass of Ag-Ge-Se system

Energy Technology Data Exchange (ETDEWEB)

Suenaga, R; Nakashima, S; Tahara, S; Takeda, S [Graduate School of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Kawakita, Y [Faculty of Sciences, Kyushu University, 4-2-1 Ropponmatsu, Fukuoka 810-8560 (Japan); Kohara, S [Japan Synchrotron Radiation Research Inst., 1-1-1 Kouto, Sayo-cho, Hyogo 679-5198 (Japan)], E-mail: takeda@rc.kyushu-u.ac.jp

2008-02-15

Superionic conducting glasses are the important materials as solid electrolytes. Amorphous Ag-Ge-Se system is well known to exhibit the superionic conducting behavior where silver ions easily migrate into the mixed structure of Ag{sub 2}Se and Ge-Se chalcogenide glass. It will be good material to study how the superionic conducting region distributes in the glassy network, and whether the conducting paths extends to the entire of the material, or the localized and limited area in an isolated region. In this paper, we will present the results of the static structure of Ag-Ge-Se system by high-energy X-ray diffraction measurements.

A functional carbohydrate chip platform for analysis of carbohydrate-protein interaction

International Nuclear Information System (INIS)

Seo, Jeong Hyun; Kim, Chang Sup; Hwang, Byeong Hee; Cha, Hyung Joon

2010-01-01

A carbohydrate chip based on glass or other transparent surfaces has been suggested as a potential tool for high-throughput analysis of carbohydrate-protein interactions. Here we proposed a facile, efficient, and cost-effective method whereby diverse carbohydrate types are modified in a single step and directly immobilized onto a glass surface, with retention of functional orientation. We modified various types of carbohydrates by reductive amination, in which reducing sugar groups were coupled with 4-(2-aminoethyl)aniline, which has di-amine groups at both ends. The modified carbohydrates were covalently attached to an amino-reactive NHS-activated glass surface by formation of stable amide bonds. This proposed method was applied for efficient construction of a carbohydrate microarray to analyze carbohydrate-protein interactions. The carbohydrate chip prepared using our method can be successfully used in diverse biomimetic studies of carbohydrates, including carbohydrate-biomolecule interactions, and carbohydrate sensor chip or microarray development for diagnosis and screening.

Ablation of (GeS2)0.3(Sb2S3)0.7 glass with an ultra – violet nano-second laser

Czech Academy of Sciences Publication Activity Database

Knotek, P.; Návesník, J.; Černohorský, T.; Kincl, Miloslav; Vlček, Milan; Tichý, Ladislav

2015-01-01

Roč. 64, April (2015), s. 42-50 ISSN 0025-5408 Institutional support: RVO:61389013 Keywords : chalcogenides * glass * atomic force microscopy Subject RIV: CA - Inorganic Chemistry Impact factor: 2.435, year: 2015 http://www.sciencedirect.com/science/article/pii/S0025540814007843

Measurement of the refractive index dispersion of As2Se3 bulk glass and thin films prior to and after laser irradiation and annealing using prism coupling in the near- and mid-infrared spectral range

International Nuclear Information System (INIS)

Carlie, N.; Petit, L.; Musgraves, J. D.; Richardson, K.; Anheier, N. C. Jr.; Qiao, H. A.; Bernacki, B.; Phillips, M. C.

2011-01-01

The prism coupling technique has been utilized to measure the refractive index in the near- and mid-IR spectral region of chalcogenide glasses in bulk and thin film form. A commercial system (Metricon model 2010) has been modified with additional laser sources, detectors, and a new GaP prism to allow the measurement of refractive index dispersion over the 1.5-10.6 μm range. The instrumental error was found to be ±0.001 refractive index units across the entire wavelength region examined. Measurements on thermally evaporated AMTIR2 thin films confirmed that (i) the film deposition process provides thin films with reduced index compared to that of the bulk glass used as a target, (ii) annealing of the films increases the refractive index of the film to the level of the bulk glass used as a target to create it, and (iii) it is possible to locally increase the refractive index of the chalcogenide glass using laser exposure at 632.8 nm.

A full-wafer fabrication process for glass microfluidic chips with integrated electroplated electrodes by direct bonding of dry film resist

International Nuclear Information System (INIS)

Vulto, Paul; Urban, G A; Huesgen, Till; Albrecht, Björn

2009-01-01

A full-wafer process is presented for fast and simple fabrication of glass microfluidic chips with integrated electroplated electrodes. The process employs the permanent dry film resist (DFR) Ordyl SY300 to create microfluidic channels, followed by electroplating of silver and subsequent chlorination. The dry film resist is bonded directly to a second substrate, without intermediate gluing layers, only by applying pressure and moderate heating. The process of microfluidic channel fabrication, electroplating and wafer bonding can be completed within 1 day, thus making it one of the fastest and simplest full-wafer fabrication processes. (note)

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

Science.gov (United States)

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of the dynamics of a nonlinear optical response in glassy chalcogenide semiconductors by the pump–probe method

Science.gov (United States)

Romanova, E. A.; Kuzyutkina, Yu S.; Shiryaev, V. S.; Guizard, S.

2018-03-01

An analysis of the results of measurements by using the pump–probe method with a femtosecond resolution in time and computer simulation of the charge carrier kinetics have revealed two types of a nonlinear optical response in samples of chalcogenide glasses belonging to the As – S – Se system, irradiated by 50-fs laser pulses with a wavelength of 0.79 μm. The difference in the nonlinear dynamics is due to the difference in the photoexcitation character, because laser radiation can be absorbed either through bound states in the band gap or without their participation, depending on the ratio of the pump photon energy to the bandgap energy.

Hydrothermal synthesis of layered iron-chalcogenide superconductors and related compounds

International Nuclear Information System (INIS)

Pachmayr, Ursula Elisabeth

2017-01-01

This thesis provides a new preparative approach to iron-chalcogenide based superconductors. The hydrothermal synthesis of anti-PbO type FeSe, which can be seen as basis structure of the compounds of interest was successfully developed. Along with this, some insights regarding the influence of synthesis parameters were gained featuring a basis for further hydrothermal syntheses of new iron-chalcogenide compounds. The potential of this method, primarily the extension of the so far limited accessibility of iron-chalcogenide based superconductors by solid-state sythesis, was revealed within the present work. The solid-solution FeSe_1_-_xS_x was prepared for the whole substitution range, whereas solid-state synthesis exhibits a solubility limit at x = 0.3. Furthermore, the new compounds [(Li_0_._8Fe_0_._2)OH]FeX (X = Se, S) were synthesized which are exclusively accessible via hydrothermal method. The compounds, where layers of (Li_0_._8Fe_0_._2)OH alternate with FeX layers, feature exceptional physical properties, notably a coexistence of superconductivity and ferromagnetism. They were intensively studied within this work. By combination of solid-state and hydrothermal ion-exchange synthesis even large crystals necessary for subsequent physical measurements are accessible. Apart from these layered iron-chalcogenide superconductors, further compounds which likewise exhibit building blocks of edge-sharing FeSe_4 tetrahedra were found via this synthesis method. The iron selenides A_2Fe_4Se_6 (A = K, Rb, Cs) consist of double chains of [Fe_2Se_3]"1"-, whereas a new compound Na_6(H_2O)_1_8Fe_4Se_8 exhibits [Fe_4Se_8]"6"- 'stella quadrangula' clusters. This structural diversity as well as the associated physical properties of the compounds demonstrates the numerous capabilities of hydrothermal synthesis in the field of iron-chalcogenide compounds. In particular with regard to iron-chalcogenide based superconductors this synthesis strategy is encouraging. It seems probable

Hydrothermal synthesis of layered iron-chalcogenide superconductors and related compounds

Energy Technology Data Exchange (ETDEWEB)

Pachmayr, Ursula Elisabeth

2017-04-06

This thesis provides a new preparative approach to iron-chalcogenide based superconductors. The hydrothermal synthesis of anti-PbO type FeSe, which can be seen as basis structure of the compounds of interest was successfully developed. Along with this, some insights regarding the influence of synthesis parameters were gained featuring a basis for further hydrothermal syntheses of new iron-chalcogenide compounds. The potential of this method, primarily the extension of the so far limited accessibility of iron-chalcogenide based superconductors by solid-state sythesis, was revealed within the present work. The solid-solution FeSe{sub 1-x}S{sub x} was prepared for the whole substitution range, whereas solid-state synthesis exhibits a solubility limit at x = 0.3. Furthermore, the new compounds [(Li{sub 0.8}Fe{sub 0.2})OH]FeX (X = Se, S) were synthesized which are exclusively accessible via hydrothermal method. The compounds, where layers of (Li{sub 0.8}Fe{sub 0.2})OH alternate with FeX layers, feature exceptional physical properties, notably a coexistence of superconductivity and ferromagnetism. They were intensively studied within this work. By combination of solid-state and hydrothermal ion-exchange synthesis even large crystals necessary for subsequent physical measurements are accessible. Apart from these layered iron-chalcogenide superconductors, further compounds which likewise exhibit building blocks of edge-sharing FeSe{sub 4} tetrahedra were found via this synthesis method. The iron selenides A{sub 2}Fe{sub 4}Se{sub 6} (A = K, Rb, Cs) consist of double chains of [Fe{sub 2}Se{sub 3}]{sup 1-}, whereas a new compound Na{sub 6}(H{sub 2}O){sub 18}Fe{sub 4}Se{sub 8} exhibits [Fe{sub 4}Se{sub 8}]{sup 6-} 'stella quadrangula' clusters. This structural diversity as well as the associated physical properties of the compounds demonstrates the numerous capabilities of hydrothermal synthesis in the field of iron-chalcogenide compounds. In particular with regard

Superconducting properties of iron chalcogenide thin films

Directory of Open Access Journals (Sweden)

Paolo Mele

2012-01-01

Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

Transuranium element chalcogenides. Crystallochemistry and Moessbauer spectrometry of neptunium 237 chalcogenides

International Nuclear Information System (INIS)

Thevenin, T.; Pages, M.; Damien, D.

1981-09-01

To study actinide compounds , neptunium 237 has been studied by Moessbauer resonance. The different oxidation degrees of neptunium (7, 6, 5, 4 and 3) have a very important effect on isomeric displacements. In the study of chalcogenides, the isomeric displacement value of NpS 3 confirms the valency 4+ of neptunium in this compound. Results obtained with Np 3 S 5 show two valency state +3 and +4 in this compound. There is a good agreement with the two crystalline sites determined by crystallography [fr

Method to synthesize metal chalcogenide monolayer nanomaterials

Science.gov (United States)

Hernandez-Sanchez, Bernadette A.; Boyle, Timothy J.

2016-12-13

Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes.

From Selenium- to Tellurium-Based Glass Optical Fibers for Infrared Spectroscopies

Directory of Open Access Journals (Sweden)

Jacques Lucas

2013-05-01

Full Text Available Chalcogenide glasses are based on sulfur, selenium and tellurium elements, and have been studied for several decades regarding different applications. Among them, selenide glasses exhibit excellent infrared transmission in the 1 to 15 µm region. Due to their good thermo-mechanical properties, these glasses could be easily shaped into optical devices such as lenses and optical fibers. During the past decade of research, selenide glass fibers have been proved to be suitable for infrared sensing in an original spectroscopic method named Fiber Evanescent Wave Spectroscopy (FEWS. FEWS has provided very nice and promising results, for example for medical diagnosis. Then, some sophisticated fibers, also based on selenide glasses, were developed: rare-earth doped fibers and microstructured fibers. In parallel, the study of telluride glasses, which can have transmission up to 28 µm due to its atom heaviness, has been intensified thanks to the DARWIN mission led by the European Space Agency (ESA. The development of telluride glass fiber enables a successful observation of CO2 absorption band located around 15 µm. In this paper we review recent results obtained in the Glass and Ceramics Laboratory at Rennes on the development of selenide to telluride glass optical fibers, and their use for spectroscopy from the mid to the far infrared ranges.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Science.gov (United States)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Investigation of electrical and optical properties of Ge-Ga-As-S glasses doped with rare-earth ions

Czech Academy of Sciences Publication Activity Database

Zavadil, Jiří; Kubliha, M.; Kostka, Petr; Iovu, M.; Labaš, V.; Ivanova, Z.G.

-, č. 377 (2013), s. 85-89 ISSN 0022-3093 R&D Projects: GA ČR GAP106/12/2384; GA MŠk 7AMB12SK147 Institutional support: RVO:67985882 ; RVO:67985891 Keywords : Chalcogenide glass * Direct electrical conductivity * Photoluminescence Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; DB - Geology ; Mineralogy (USMH-B) Impact factor: 1.716, year: 2013

Propagation of evanescent waves in multimode chalcogenide fiber immersed in an aqueous acetone solution: theory and experiment

Science.gov (United States)

Korsakova, S. V.; Romanova, E. A.; Velmuzhov, A. P.; Kotereva, T. V.; Sukhanov, M. V.; Shiryaev, V. S.

2017-04-01

Chalcogenide fibers are considered as a base for creation of a fiber-optical platform for the mid-IR evanescent wave spectroscopy. In this work, transmittance of a multimode fiber made of Ge26As17Se25Te32 glass, immersed into an aqueous acetone solution was measured in the range of wavelengths 5 - 9 microns at various concentrations of the solution. A theoretical approach based on electromagnetic theory of optical fibers has been applied for analysis of evanescent modes propagation in the fiber. Attenuation coefficients calculated for each HE1m evanescent mode increase with the mode radial order m. This effect can be used for optimisation of the fiber-optic sensing elements for the mid-IR spectroscopy.

Effect of residual chips on the material removal process of the bulk metallic glass studied by in situ scratch testing inside the scanning electron microscope

Directory of Open Access Journals (Sweden)

Hu Huang

2012-12-01

Full Text Available Research on material removal mechanism is meaningful for precision and ultra-precision manufacturing. In this paper, a novel scratch device was proposed by integrating the parasitic motion principle linear actuator. The device has a compact structure and it can be installed on the stage of the scanning electron microscope (SEM to carry out in situ scratch testing. Effect of residual chips on the material removal process of the bulk metallic glass (BMG was studied by in situ scratch testing inside the SEM. The whole removal process of the BMG during the scratch was captured in real time. Formation and growth of lamellar chips on the rake face of the Cube-Corner indenter were observed dynamically. Experimental results indicate that when lots of chips are accumulated on the rake face of the indenter and obstruct forward flow of materials, materials will flow laterally and downward to find new location and direction for formation of new chips. Due to similar material removal processes, in situ scratch testing is potential to be a powerful research tool for studying material removal mechanism of single point diamond turning, single grit grinding, mechanical polishing and grating fabrication.

Dynamics of the optically-induced properties of a small-polaronic glass

International Nuclear Information System (INIS)

Emin, D.

1979-01-01

The relaxation and recombination of an electronic excitation created by the absorption of a super-band-gap photon is considered for a system in which excitons and charge carriers find it energetically favorable to self-trap. The notions of a barrier to self-trapping, a short-range repulsion between electrons and holes, and the electromodulation of the small-polaron absorption band play a central role in this discussion. The results are consistent with experiments on chalcogenide glasses

Surface relief and refractive index gratings patterned in chalcogenide glasses and studied by off-axis digital holography.

Science.gov (United States)

Cazac, V; Meshalkin, A; Achimova, E; Abashkin, V; Katkovnik, V; Shevkunov, I; Claus, D; Pedrini, G

2018-01-20

Surface relief gratings and refractive index gratings are formed by direct holographic recording in amorphous chalcogenide nanomultilayer structures As 2 S 3 -Se and thin films As 2 S 3 . The evolution of the grating parameters, such as the modulation of refractive index and relief depth in dependence of the holographic exposure, is investigated. Off-axis digital holographic microscopy is applied for the measurement of the photoinduced phase gratings. For the high-accuracy reconstruction of the wavefront (amplitude and phase) transmitted by the fabricated gratings, we used a computational technique based on the sparse modeling of phase and amplitude. Both topography and refractive index maps of recorded gratings are revealed. Their separated contribution in diffraction efficiency is estimated.

Flexure mechanism-based parallelism measurements for chip-on-glass bonding

International Nuclear Information System (INIS)

Jung, Seung Won; Yun, Won Soo; Jin, Songwan; Jeong, Young Hun; Kim, Bo Sun

2011-01-01

Recently, liquid crystal displays (LCDs) have played vital roles in a variety of electronic devices such as televisions, cellular phones, and desktop/laptop monitors because of their enhanced volume, performance, and functionality. However, there is still a need for thinner LCD panels due to the trend of miniaturization in electronic applications. Thus, chip-on-glass (COG) bonding has become one of the most important aspects in the LCD panel manufacturing process. In this study, a novel sensor was developed to measure the parallelism between the tooltip planes of the bonding head and the backup of the COG main bonder, which has previously been estimated by prescale pressure films in industry. The sensor developed in this study is based on a flexure mechanism, and it can measure the total pressing force and the inclination angles in two directions that satisfy the quantitative definition of parallelism. To improve the measurement accuracy, the sensor was calibrated based on the estimation of the total pressing force and the inclination angles using the least-squares method. To verify the accuracy of the sensor, the estimation results for parallelism were compared with those from prescale pressure film measurements. In addition, the influence of parallelism on the bonding quality was experimentally demonstrated. The sensor was successfully applied to the measurement of parallelism in the COG-bonding process with an accuracy of more than three times that of the conventional method using prescale pressure films

On the “compositional threshold“ in GeS2-Sb2S3, GeSe2-Sb2Se3 and GeS2-Bi2S3 glasses

Czech Academy of Sciences Publication Activity Database

Tichý, Ladislav; Tichá, H.

2015-01-01

Roč. 152, 15 February (2015), s. 1-3 ISSN 0254-0584 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * hetero three atom linkages * eutectic compositon Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Directory of Open Access Journals (Sweden)

Fei Zhuge

2015-05-01

Full Text Available It has been reported that in chalcogenide-based electrochemical metallization (ECM memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S, the metal filament grows from the cathode (e.g., Pt and W towards the anode (e.g., Cu and Ag, whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2. The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

Laser subtractive-additive-welding microfabrication for Lab-On-Chip (LOC) applications

Science.gov (United States)

Jonušauskas, Linas; RekštytÄ--, Sima; Buivydas, Ričardas; Butkus, Simas; Paipulas, Domas; Gadonas, Roaldas; Juodkazis, Saulius; Malinauskas, Mangirdas

2017-02-01

An approach employing ultrafast laser hybrid microfabrication combining ablation, 3D nanolithography and welding is proposed for the realization of Lab-On-Chip (LOC) device. The same laser setup is shown to be suitable for fabricating microgrooves in glass slabs, polymerization of fine meshes inside them, and, lastly, sealing the whole chip with cover glass into one monolithic piece. The created micro fluidic device proved its particle sorting function by separating 1 μm and 10 μm polystyrene spheres from a mixture. Next, a lens adapter for a cell phone's camera was manufactured via thermal extrusion 3D printing technique which allowed to achieve sufficient magnification to clearly resolve <10 μm features. All together shows fs-laser microfabrication technology as a flexible and versatile tool for study and manufacturing of Lab-On-Chip devices.

Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

2015-05-15

Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

Glass and Process Development for the Next Generation of Optical Fibers: A Review

Directory of Open Access Journals (Sweden)

John Ballato

2017-03-01

Full Text Available Applications involving optical fibers have grown considerably in recent years with intense levels of research having been focused on the development of not only new generations of optical fiber materials and designs, but also on new processes for their preparation. In this paper, we review the latest developments in advanced materials for optical fibers ranging from silica, to semi-conductors, to particle-containing glasses, to chalcogenides and also in process-related innovations.

Debye temperatures of uranium chalcogenides from their lattice ...

Indian Academy of Sciences (India)

Unknown

From the phonon frequencies, their Debye temperatures are evaluated. Further, ... Keywords. Uranium chalcogenides; p-wave electronic superconductor; phonon frequency; Debye tempera- ture; spin ... to the ionic crystals of similar structure.

Synthesis of cadmium chalcogenide nanotubes at room temperature

KAUST Repository

Pan, Jun; Qian, Yitai

2012-01-01

Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

Synthesis of cadmium chalcogenide nanotubes at room temperature

KAUST Repository

Pan, Jun

2012-10-01

Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

Modulation-instability biosensing using an As2S3 chalcogenide tapered fiber

DEFF Research Database (Denmark)

Markos, Christos; Bang, Ole

2016-01-01

We demonstrate an experimentally feasible biosensor design based on As2S3 chalcogenide tapered fiber. Pumping the fiber close to 1064 nm, a record sensitivity up to ~18 nm/nm was predicted.......We demonstrate an experimentally feasible biosensor design based on As2S3 chalcogenide tapered fiber. Pumping the fiber close to 1064 nm, a record sensitivity up to ~18 nm/nm was predicted....

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

Energy Technology Data Exchange (ETDEWEB)

Boyko, Olha [Department of Pediatric Dentistry, Danylo Halytsky Lviv National Medical University, Pekarska str. 69, 79010 Lviv (Ukraine); Shpotyuk, Yaroslav [Department of Optoelectronics and Information Technologies, Ivan Franko National University of Lviv, Dragomanova str. 50, 79005 Lviv (Ukraine); Lviv Scientific Research Institute of Materials, Scientific Research Company ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Filipecki, Jacek [Institute of Physics, Jan Dlugosz University in Czestochowa, Armii Krajowej al. 13/15, 42200 Czestochowa (Poland)

2013-01-15

The processes of atomic shrinkage in network-forming solids initiated by external influences are tested using technique of positron annihilation lifetime spectroscopy at the example of chalcogenide vitreous semiconductors of arsenic sulphide type and acrylic polymers for dental application. Two state positron trapping is shown to be responsible for atomic shrinkage in chalcogenide glasses, while mixed trapping and ortho-positronium decaying is character for volumetric densification and stress propagation in acrylic dental polymers. At the basis of the obtained results it is concluded that correct analysis of externally-induced shrinkage in polymer networks under consideration can be developed by using original positron lifetime data treatment algorithms to compensate defect-free bulk annihilation channel within two-state positron trapping model and account for an interbalance between simultaneously co-existing positron trapping and orth-positronium related decaying channels within mixed three-state positron annihilation model (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

International Nuclear Information System (INIS)

Boyko, Olha; Shpotyuk, Yaroslav; Filipecki, Jacek

2013-01-01

The processes of atomic shrinkage in network-forming solids initiated by external influences are tested using technique of positron annihilation lifetime spectroscopy at the example of chalcogenide vitreous semiconductors of arsenic sulphide type and acrylic polymers for dental application. Two state positron trapping is shown to be responsible for atomic shrinkage in chalcogenide glasses, while mixed trapping and ortho-positronium decaying is character for volumetric densification and stress propagation in acrylic dental polymers. At the basis of the obtained results it is concluded that correct analysis of externally-induced shrinkage in polymer networks under consideration can be developed by using original positron lifetime data treatment algorithms to compensate defect-free bulk annihilation channel within two-state positron trapping model and account for an interbalance between simultaneously co-existing positron trapping and orth-positronium related decaying channels within mixed three-state positron annihilation model (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Single-mode glass waveguide technology for optical interchip communication on board level

Science.gov (United States)

Brusberg, Lars; Neitz, Marcel; Schröder, Henning

2012-01-01

The large bandwidth demand in long-distance telecom networks lead to single-mode fiber interconnects as result of low dispersion, low loss and dense wavelength multiplexing possibilities. In contrast, multi-mode interconnects are suitable for much shorter lengths up to 300 meters and are promising for optical links between racks and on board level. Active optical cables based on multi-mode fiber links are at the market and research in multi-mode waveguide integration on board level is still going on. Compared to multi-mode, a single-mode waveguide has much more integration potential because of core diameters of around 20% of a multi-mode waveguide by a much larger bandwidth. But light coupling in single-mode waveguides is much more challenging because of lower coupling tolerances. Together with the silicon photonics technology, a single-mode waveguide technology on board-level will be the straight forward development goal for chip-to-chip optical interconnects integration. Such a hybrid packaging platform providing 3D optical single-mode links bridges the gap between novel photonic integrated circuits and the glass fiber based long-distance telecom networks. Following we introduce our 3D photonic packaging approach based on thin glass substrates with planar integrated optical single-mode waveguides for fiber-to-chip and chip-to-chip interconnects. This novel packaging approach merges micro-system packaging and glass integrated optics. It consists of a thin glass substrate with planar integrated singlemode waveguide circuits, optical mirrors and lenses providing an integration platform for photonic IC assembly and optical fiber interconnect. Thin glass is commercially available in panel and wafer formats and characterizes excellent optical and high-frequency properties. That makes it perfect for microsystem packaging. The paper presents recent results in single-mode waveguide technology on wafer level and waveguide characterization. Furthermore the integration in a

On the structural-optical correlations in radiation-modified chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Kavetskyy, T; Tsmots, V [Solid State Microelectronics Laboratory, Drohobych Ivan Franko State Pedagogical University, 24 I. Franko Str., Drohobych, 82100 (Ukraine); Kaban, I; Hoyer, W [Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany); Shpotyuk, O, E-mail: kavetskyy@yahoo.com [Institute of Materials, Scientific Research Company ' Carat' , 202 Stryjska Str., Lviv, 79031 (Ukraine)

2011-04-01

In this work, we report our recent results on the gamma-irradiation-induced structural transformations in the Ge-Sb-S glasses as observed from the structural studies using high-energy synchrotron x-ray diffraction and extended x-ray absorption fine structure spectroscopy in comparison with the optical measurements using VIS/IR spectroscopy techniques. The structural-optical correlations in the radiation-induced effects are established. The structural changes upon irradiation are explained in the frames of the concept of coordination topological defects formation.

On the structural-optical correlations in radiation-modified chalcogenide glasses

International Nuclear Information System (INIS)

Kavetskyy, T; Tsmots, V; Kaban, I; Hoyer, W; Shpotyuk, O

2011-01-01

In this work, we report our recent results on the gamma-irradiation-induced structural transformations in the Ge-Sb-S glasses as observed from the structural studies using high-energy synchrotron x-ray diffraction and extended x-ray absorption fine structure spectroscopy in comparison with the optical measurements using VIS/IR spectroscopy techniques. The structural-optical correlations in the radiation-induced effects are established. The structural changes upon irradiation are explained in the frames of the concept of coordination topological defects formation.

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

International Nuclear Information System (INIS)

Berruet, M.; Di Iorio, Y.; Troviano, M.; Vázquez, M.

2014-01-01

Solution-based techniques were used to prepare ZnO/CuIn(Se, S) 2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe 2 (CISe) and CuInSe 2−x S x (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO 2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe 2 or CuInSe 0.4 S 1.6 . • A TiO 2 buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction

Infrared emitting and photoconducting colloidal silver chalcogenide nanocrystal quantum dots from a silylamide-promoted synthesis.

Science.gov (United States)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Günter; Heiss, Wolfgang

2011-05-24

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.

Structure of Se-rich As-Se glasses by high-resolution x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Golovchak, R.; Kovalskiy, A.; Miller, A. C.; Jain, H.; Shpotyuk, O.

2007-01-01

To establish the validity of various proposed structural models, we have investigated the structure of the binary As x Se 100-x chalcogenide glass family (x≤40) by high-resolution x-ray photoelectron spectroscopy. From the composition dependence of the valence band, the contributions to the density of states from the 4p lone pair electrons of Se and the 4p bonding states and 4s electrons of Se and As are identified in the top part of the band. The analysis of Se 3d and As 3d core-level spectra supports the so-called chain crossing model for the atomic structure of Se-rich As x Se 100-x bulk glasses. The results also indicate small deviations (∼3-8%) from this model, especially for glass compositions with short Se chains (25 40 Se 60 and of Se-Se-Se fragments in a glass with composition x=30 is established

Numerical study of propagation properties of surface plasmon polaritons in nonlinear media

KAUST Repository

Sagor, Rakibul Hasan

2016-03-29

We present a time-domain algorithm for simulating nonlinear propagation of surface plasmon polaritons (SPPs) in chalcogenide glass. Due to the high non-linearity property and strong dispersion and confinement chalcogenide glasses are widely known as ultrafast nonlinear materials. We have used the finite difference time domain (FDTD) method to develop the simulation algorithm for the current analysis. We have modeled the frequency dependent dispersion properties and third order nonlinearity property of chalcogenide glass utilizing the general polarization algorithm merged in the auxiliary differential equation (ADE) method. The propagation dynamics of the whole structure with and without third order nonlinearity property of chalcogenide glass have been simulated and the effect of nonlinearity on the propagation properties of SPP has been investigated. © 2016 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.

Crystallization kinetics, glass transition kinetics, and thermal stability of Se70-xGa30Inx (x=5, 10, 15, and 20) semiconducting glasses

International Nuclear Information System (INIS)

Imran, Mousa M.A.

2011-01-01

Crystallization and glass transition kinetics of Se 70-x Ga 30 In x (x=5, 10, 15, and 20) semiconducting chalcogenide glasses were studied under non-isothermal condition using a Differential Scanning Calorimeter (DSC). DSC thermograms of the samples were recorded at four different heating rates 5, 10, 15, and 20 K/min. The variation of the glass transition temperature (T g ) with the heating rate (β) was used to calculate the glass transition activation energy (E t ) using two different models. Meanwhile, the variation of the peak temperature of crystallization (T p ) with β was utilized to deduce the crystallization activation energy (E c ) using Kissinger, Augis-Bennet, and Takhor models. Results reveal that E t decreases with increasing In content, while both T g and E c exhibit the opposite behavior, and the crystal growth occurs in one dimension. The variation of these thermal parameters with the average coordination number was also discussed, and the results were interpreted in terms of the type of bonding that In makes with Se. Assessment of thermal stability and glass forming ability (GFA) was carried out on the basis of some quantitative criteria and the results indicate that thermal stability is enhanced while the crystallization rate is reduced with the addition of In to Se-Ga glass. -- Research highlights: → Addition of In to Se-Ga glass decreases the glass transition activation energy. → The crystallization rate in Se-Ga-In glass is reduced as In content increases. → The crystal growth in Se-Ga-In glass occurs in one dimension. → Thermal properties of Se-Ga-In glass indicate a shift in Phillips-Thorpe threshold.

Numerical study of propagation properties of surface plasmon polaritons in nonlinear media

KAUST Repository

Sagor, Rakibul Hasan; Ghulam Saber, Md.; Alsunaidi, Mohammad

2016-01-01

We present a time-domain algorithm for simulating nonlinear propagation of surface plasmon polaritons (SPPs) in chalcogenide glass. Due to the high non-linearity property and strong dispersion and confinement chalcogenide glasses are widely known

Mean-coordination number dependence of the fragility in Ge-Se-In glass-forming liquids

International Nuclear Information System (INIS)

Saffarini, G.; Saiter, A.; Garda, M.R.; Saiter, J.M.

2007-01-01

Differential scanning calorimetry measurements have been performed on elemental Se as well as on Ge x Se 94- x In 6 (x=4, 8, and 11 at%) and on Ge y Se 88- y In 12 (y=5, 7, and 9 at%) chalcogenide glasses. From the cooling rate dependence of the fictive temperature, the apparent activation energies, Δh*, and the fragility indices, m, as defined in the strong-fragile glass-forming liquid concept, are determined. It is found that, in Ge-Se-In system, there is an evolution from strong (m=67) to fragile (m=116) glass-forming liquids. The dependence of 'm' on the mean-coordination number, Z, is also obtained. This dependence is rationalized by assuming that, in this glassy alloy system, there is a tendency for the formation of In 2 Se 3 clusters

Short-range order analysis and some physical properties of InxSe1-x glasses

International Nuclear Information System (INIS)

El-Kabany, N.

2012-01-01

Bulk In x Se 1-x (with x=5-25 at%) glasses were prepared using the melt-quench technique. Short range order(SRO) was examined by the X-ray diffraction using Cu(k α ) radiation in the wave vector interval 0.28≤k≤6.5 A 0-1 .The SRO parameters have been obtained from the radial distribution function. The inter-atomic distance obtained from the first and second peak are r 1 =0.263 and r 2 =0.460 nm, which is equivalent In-Se and Se-Se bond length. The fundamental structural unit for the studied glasses is In 2 Se 3 pyramid. Using the differential scanning calorimetry (DSC), the crystallization mechanism of In x Se 1-x chalcogenide glass has been studied. The glass transition activation energy (E g ) is 289±0.3 kj/mol.There is a correlation amongst the glass forming ability, bond strength and the number of lone pair electrons. The utility of the Gibbs-Di Marzio relation was achieved by estimating T g theoretically.

Engineering of refractive index in sulfide chalcogenide glass by direct laser writing

KAUST Repository

Zhang, Yaping; Gao, Yangqin; Ng, Tien Khee; Ooi, Boon S.; Chew, Basil; Hedhili, Mohamed N.; Zhao, Donghui; Jain, Himanshu

2010-01-01

Arsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film

Fully integrated optical system for lab-on-a-chip applications

DEFF Research Database (Denmark)

Balslev, Søren; Olsen, Brian Bilenberg; Geschke, Oliver

2004-01-01

We present a lab-on-a-chip device featuring a microfluidic dye laser, wave-guides, microfluidic components and photo-detectors integrated on the chip. The microsystem is designed for wavelength selective absorption measurements in the visible range on a fluidic sample, which can be prepared....../mixed on-chip. The laser structures, wave-guides and micro-fluidic handling system are defined in a single UV-lithography step on a 10 μm thick SU-8 layer on top of the substrate. The SU-8 structures are sealed by a Borofloat glass lid, using polymethylmethacrylate (PMMA) adhesive bonding....

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

2016-01-01

) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

Mechanical relaxation in chalcogenide glasses of the Ge-As-S system

International Nuclear Information System (INIS)

Bilanych, V.S.; Melnychenko, T.D.; Rizak, V.M.; Makauz, I.I.

2006-01-01

The temperature and frequency-related dependences of the internal friction and the shear modulus in Ge x As 40-x S 60 glasses have been studied. The maxima of internal friction of both the relaxation and non relaxation types have been found in the low-temperature range. A relaxation maximum has been revealed in the vitrification region, and its parameters have been determined. Possible mechanisms of these processes have been discussed

Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

International Nuclear Information System (INIS)

Charnovych, S.; Nemec, P.; Nazabal, V.; Csik, A.; Allix, M.; Matzen, G.; Kokenyesi, S.

2011-01-01

Highlights: → Amorphous chalcogenides were investigated in this work. → Photo-induced effects were investigated in the created thin films. → Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As 20 Se 80 /alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As 20 Se 80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

NARCIS (Netherlands)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Charrier, J. [FOTON, UMR CNRS 6082, Enssat, 6 rue de Kerampont, BP 80518, 22305 Lannion (France); Cathelinaud, M. [Missions des Ressources et Compétences Technologiques, UPS CNRS 2274, 92195 Meudon (France); Allix, M. [CEMHTI-CNRS, Site Haute Température, Orléans (France); Adam, J.-L.; Zhang, S. [Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France)

2013-07-31

Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70}) and mixed chalcogenide-oxide layers (As{sub 40}Se{sub 60}/alumino-silicate and Ga{sub 10}Ge{sub 15}Te{sub 75}/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As{sub 40}Se{sub 60}/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} (doped with 5000 ppm of Er{sup 3+}) spacer surrounded by two 10-layer As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

Energy Technology Data Exchange (ETDEWEB)

Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

2014-12-15

Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

Surfactant free metal chalcogenides microparticles consisting of ...

Indian Academy of Sciences (India)

SANYASINAIDU GOTTAPU

2017-11-11

Nov 11, 2017 ... Metal chalcogenides; copper sulphide; copper selenide; micro flowers. 1. Introduction .... adding calculated quantity (2.7 mmol) of each acid separately. .... salts (LiCl, LiNO3, and LiOAc), and then hydride ions from (BH. − ... Concentration of metal .... hait A and Lim J Y 2016 Cation exchange synthesis of.

The intercalation chemistry of layered iron chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Vivanco, Hector K.; Rodriguez, Efrain E., E-mail: efrain@umd.edu

2016-10-15

The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials—mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

Gamma-ray irradiation resistance of silver doped GeS2–Ga2S3–AgI chalcohalide glasses

International Nuclear Information System (INIS)

Shen, W.; Baccaro, S.; Cemmi, A.; Ren, J.; Zhang, Z.; Zhou, Y.; Yang, Y.; Chen, G.

2014-01-01

Highlights: • The γ-ray irradiation resistance of Ag doped chalcohalide glasses (GeS 2 –Ga 2 S 3 –AgI) has been investigated. • The introduction of silver ions plays a specific role in the modification of the gamma-ray irradiation resistance of glasses. • The sulfur exerts an important effect on the photo-sensitivity of chalcogenide glasses. - Abstract: In the present work, series of silver doped Ge–Ga–S–AgI chalcohalide glasses have been prepared and their optical transmission spectra are compared before and after γ-ray irradiation at different doses. The differential transmission spectra of the irradiated samples with and without Ag doping have been compared to characterize the γ-ray irradiation induced red-shift of electronic absorption and formation of color centers. Ag doping plays an important role in increasing γ-ray irradiation resistance of the chalcohalide glasses due to its specific effect on the valence band and the network structure of glasses

Structural characterization and compositional dependence of the optical properties of Ge-Ga-La-S chalcohalide glass system

Science.gov (United States)

Li, Lini; Jiao, Qing; Lin, Changgui; Dai, Shixun; Nie, Qiuhua

2018-04-01

In this paper, chalcogenide glasses of 80GeS2sbnd (20sbnd x)Ga2S3sbnd xLa2S3 (x = 0, 1, 3, 5 mol%) were synthesized through the traditional melt-quenching technique. The effects of La2S3 addition on the thermal, optical, and structural properties of Gesbnd Gasbnd S glasses were investigated. Results showed that the synthesized glasses possessed considerably high glass transition temperature, improved glass forming ability, high refractive index, and excellent infrared transmittance. A redshift at the visible absorbing cut-off edge lower than 500 nm was observed with increasing of La2S3 content. Direct and indirect optical band gap values were calculated. SEM result suggested that this glass system owned better glass forming ability and uniformity. Raman spectral analysis indicated that the introduction of La2S3 induced the dissociation of Gesbnd Ge metal bonds and transformed the [S3Gesbnd GeS3] structure to GeS4 tetrahedrons. Consequently, the connectivity between tetrahedrons of the vitreous network was enhanced. This work suggests that La2S3 modified Ge-Gasbnd Lasbnd S glass is a promising material for infrared optical research.

Characterization and Physics-Based Modeling of Electrochemical Memristors

Science.gov (United States)

2015-11-16

5  3.2.1  GexSe1-x Chalcagenide Glass Technology ................................................................. 5  3.2.2  Cu- SiO2 ...potential radiation threats, of which there seem to be few except for some single event effect susceptibility. 15. SUBJECT TERMS chalcogenide glass ...2  3  Task 1 – Chalcogenide Glass Material and

Structural-relaxation phenomena in As–S glasses as probed by combined PAL/DBAR technique

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of Scientific Research Company “Carat”, 202 Stryjska Str., Lviv, 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa, 42200 (Poland); Ingram, A. [Faculty of Physics of Opole Technical University, 75 Ozimska Str., Opole, 45370 (Poland); Szatanik, R. [Institute of Physics of Opole University, 48 Oleska Str., Opole, 45052 (Poland); Shpotyuk, M. [Institute of Materials of Scientific Research Company “Carat”, 202 Stryjska Str., Lviv, 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv, 79013 (Ukraine); Golovchak, R. [Physics and Astronomy Department, Austin Peay State University, 601 College Str., Clarksville, TN, 37044 (United States)

2015-04-01

Experimental techniques exploring phenomena of positron–electron interaction, namely the positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation, are shown to be very informative tools to study radiation- and thermally-induced phenomena in chalcogenide glasses of binary As–S system. Time-dependent processes of free-volume voids agglomeration (expansion), fragmentation (refining) and disappearing (contraction) are identified as main stages of physical aging in S-rich glasses, while a competitive channel of coordination topological defects formation associated with void charging becomes significant in a vicinity of near-stoichiometric glass compositions under γ-irradiation. The data of combined positron lifetime and Doppler broadening of annihilation radiation measurements are correlated with radiation-induced shift of fundamental optical absorption edge of the studied glasses. The meaningful model for γ-induced and relaxation-driven evolution in free-volume void structure of As–S glasses giving a unified insight on their structural-chemical nature is proposed. - Highlights: • Combined optical, PAL and DBAR probes to study structural relaxation in As–S glasses. • Void agglomeration, fragmentation and disappearing are main stages of physical aging. • Radiation-induced coordination defects are important in near-stoichiometric As–S. • Proposed model describes free-volume evolution in the void structure of As–S glasses.

Structural-relaxation phenomena in As–S glasses as probed by combined PAL/DBAR technique

International Nuclear Information System (INIS)

Shpotyuk, O.; Ingram, A.; Szatanik, R.; Shpotyuk, M.; Golovchak, R.

2015-01-01

Experimental techniques exploring phenomena of positron–electron interaction, namely the positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation, are shown to be very informative tools to study radiation- and thermally-induced phenomena in chalcogenide glasses of binary As–S system. Time-dependent processes of free-volume voids agglomeration (expansion), fragmentation (refining) and disappearing (contraction) are identified as main stages of physical aging in S-rich glasses, while a competitive channel of coordination topological defects formation associated with void charging becomes significant in a vicinity of near-stoichiometric glass compositions under γ-irradiation. The data of combined positron lifetime and Doppler broadening of annihilation radiation measurements are correlated with radiation-induced shift of fundamental optical absorption edge of the studied glasses. The meaningful model for γ-induced and relaxation-driven evolution in free-volume void structure of As–S glasses giving a unified insight on their structural-chemical nature is proposed. - Highlights: • Combined optical, PAL and DBAR probes to study structural relaxation in As–S glasses. • Void agglomeration, fragmentation and disappearing are main stages of physical aging. • Radiation-induced coordination defects are important in near-stoichiometric As–S. • Proposed model describes free-volume evolution in the void structure of As–S glasses

A multilevel Lab on chip platform for DNA analysis.

Science.gov (United States)

Marasso, Simone Luigi; Giuri, Eros; Canavese, Giancarlo; Castagna, Riccardo; Quaglio, Marzia; Ferrante, Ivan; Perrone, Denis; Cocuzza, Matteo

2011-02-01

Lab-on-chips (LOCs) are critical systems that have been introduced to speed up and reduce the cost of traditional, laborious and extensive analyses in biological and biomedical fields. These ambitious and challenging issues ask for multi-disciplinary competences that range from engineering to biology. Starting from the aim to integrate microarray technology and microfluidic devices, a complex multilevel analysis platform has been designed, fabricated and tested (All rights reserved-IT Patent number TO2009A000915). This LOC successfully manages to interface microfluidic channels with standard DNA microarray glass slides, in order to implement a complete biological protocol. Typical Micro Electro Mechanical Systems (MEMS) materials and process technologies were employed. A silicon/glass microfluidic chip and a Polydimethylsiloxane (PDMS) reaction chamber were fabricated and interfaced with a standard microarray glass slide. In order to have a high disposable system all micro-elements were passive and an external apparatus provided fluidic driving and thermal control. The major microfluidic and handling problems were investigated and innovative solutions were found. Finally, an entirely automated DNA hybridization protocol was successfully tested with a significant reduction in analysis time and reagent consumption with respect to a conventional protocol.

Mid-infrared materials and devices on a Si platform for optical sensing

Science.gov (United States)

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Design and Characterization of a Sensorized Microfluidic Cell-Culture System with Electro-Thermal Micro-Pumps and Sensors for Cell Adhesion, Oxygen, and pH on a Glass Chip

Directory of Open Access Journals (Sweden)

Sebastian M. Bonk

2015-07-01

Full Text Available We combined a multi-sensor glass-chip with a microfluidic channel grid for the characterization of cellular behavior. The grid was imprinted in poly-dimethyl-siloxane. Mouse-embryonal/fetal calvaria fibroblasts (MC3T3-E1 were used as a model system. Thin-film platinum (Pt sensors for respiration (amperometric oxygen electrode, acidification (potentiometric pH electrodes and cell adhesion (interdigitated-electrodes structures, IDES allowed us to monitor cell-physiological parameters as well as the cell-spreading behavior. Two on-chip electro-thermal micro-pumps (ETμPs permitted the induction of medium flow in the system, e.g., for medium mixing and drug delivery. The glass-wafer technology ensured the microscopic observability of the on-chip cell culture. Connecting Pt structures were passivated by a 1.2 μm layer of silicon nitride (Si3N4. Thin Si3N4 layers (20 nm or 60 nm were used as the sensitive material of the pH electrodes. These electrodes showed a linear behavior in the pH range from 4 to 9, with a sensitivity of up to 39 mV per pH step. The oxygen sensors were circular Pt electrodes with a sensor area of 78.5 μm2. Their sensitivity was 100 pA per 1% oxygen increase in the range from 0% to 21% oxygen (air saturated. Two different IDES geometries with 30- and 50-μm finger spacings showed comparable sensitivities in detecting the proliferation rate of MC3T3 cells. These cells were cultured for 11 days in vitro to test the biocompatibility, microfluidics and electric sensors of our system under standard laboratory conditions.

Debye temperatures of uranium chalcogenides from their lattice ...

Indian Academy of Sciences (India)

Phonon dispersion relations in uranium chalcogenides have been investigated using a modified three-body force shell model. From the phonon frequencies, their Debye temperatures are evaluated. Further, on the basis of the spin fluctuation in the heavy fermion uranium compounds, UPt3 and UBe13, the possible ...

Chalcogenide Sensitized Carbon Based TiO2 Nanomaterial For Solar Driven Applications

Science.gov (United States)

Pathak, Pawan

The demand for renewable energy is growing because fossils fuels are depleting at a rapid pace. Solar energy an abundant green energy resource. Utilizing this resource in a smart manner can resolve energy-crisis related issues. Sun light can be efficiently harvested using semiconductor based materials by utilizing photo-generated charges for numerous beneficial applications. The main goal of this thesis is to synthesize different nanostructures of TiO2, develop a novel method of coupling and synthesizing chalcogenide nanocrystals with TiO2 and to study the charge transportation effects of the various carbon allotropes in the chalcogenide nanocrystal sensitized TiO2 nanostructure. We have fabricated different nanostructures of TiO2 as solar energy harvesting materials. Effects of the different phases of TiO2 have also been studied. The anatase phase of TiO2 is more photoactive than the rutile phase of TiO2, and the higher dimension of the TiO2 can increase the surface area of the material which can produce higher photocurrent. Since TiO2 only absorbs in the UV range; to increase the absorbance TiO2 should be coupled to visible light absorbing materials. This dissertation presents a simple approach to synthesize and couple chalcogenide nanocrystals with TiO2 nanostructure to form a heterostructured composite. An atmospheric pressure based, single precursor, one-pot approach has been developed and tested to assemble chalcogenide nanocrystal on the TiO2 surface. Surface characterization using microscopy, X-ray diffraction, and elemental analysis indicates the formation of nanocrystals along the nanotube walls and inter-tubular spacing. Optical measurements indicate that the chalcogenide nanocrystals absorb in the visible region and demonstrate an increase in photocurrent in comparison to bare TiO2 nanostructure. The CdS synthesized TiO2 nanostructure produced the highest photocurrent as measured in the three electrode system. We have also assembled the PbS nanocrystal

Route to one-step microstructure mold fabrication for PDMS microfluidic chip

Science.gov (United States)

Lv, Xiaoqing; Geng, Zhaoxin; Fan, Zhiyuan; Wang, Shicai; Su, Yue; Fang, Weihao; Pei, Weihua; Chen, Hongda

2018-04-01

The microstructure mold fabrication for PDMS microfluidic chip remains complex and time-consuming process requiring special equipment and protocols: photolithography and etching. Thus, a rapid and cost-effective method is highly needed. Comparing with the traditional microfluidic chip fabricating process based on the micro-electromechanical system (MEMS), this method is simple and easy to implement, and the whole fabrication process only requires 1-2 h. Different size of microstructure from 100 to 1000 μm was fabricated, and used to culture four kinds of breast cancer cell lines. Cell viability and morphology was assessed when they were cultured in the micro straight channels, micro square holes and the bonding PDMS-glass microfluidic chip. The experimental results indicate that the microfluidic chip is good and meet the experimental requirements. This method can greatly reduce the process time and cost of the microfluidic chip, and provide a simple and effective way for the structure design and in the field of biological microfabrications and microfluidic chips.

Theoretical study of phonon dispersion, elastic, mechanical and thermodynamic properties of barium chalcogenides

Science.gov (United States)

Musari, A. A.; Orukombo, S. A.

2018-03-01

Barium chalcogenides are known for their high-technological importance and great scientific interest. Detailed studies of their elastic, mechanical, dynamical and thermodynamic properties were carried out using density functional theory and plane-wave pseudo potential method within the generalized gradient approximation. The optimized lattice constants were in good agreement when compared with experimental data. The independent elastic constants, calculated from a linear fit of the computed stress-strain function, were used to determine the Young’s modulus (E), bulk modulus (B), shear modulus (G), Poisson’s ratio (σ) and Zener’s anisotropy factor (A). Also, the Debye temperature and sound velocities for barium chalcogenides were estimated from the three independent elastic constants. The calculations of phonon dispersion showed that there are no negative frequencies throughout the Brillouin zone. Hence barium chalcogenides have dynamically stable NaCl-type crystal structure. Finally, their thermodynamic properties were calculated in the temperature range of 0-1000 K and their constant-volume specific heat capacities at room-temperature were reported.

Compositional Dependence Of Hardness Of Ge-Sb-Se Glass For Molded Lens Applications

Directory of Open Access Journals (Sweden)

Park J.K.

2015-06-01

Full Text Available Chalcogenide glass in the ternary Ge-Sb-Se system is inherently moldable, thus being considered as a strong candidate material for use in infrared-transmitting lens applications from the viewpoint of thermal and mechanical stability. In an effort to experimentally determine compositional region suitable for the molded lens applications, we evaluate its compositional dependence of hardness. Among the constituent atoms, Ge content turns out to exert a most conspicuous correlation with hardness. This phenomenological behavior is then explained in connection with the structural evolution that Ge brings about.

Preparation and investigation of GaxGe25As15Se60-x (x = 1 ÷ 5) glasses

Science.gov (United States)

Shiryaev, V. S.; Karaksina, E. V.; Velmuzhov, A. P.; Sukhanov, M. V.; Kotereva, T. V.; Plekhovich, A. D.; Churbanov, M. F.; Filatov, A. I.

2017-05-01

Chalcogenide glasses of GaxGe25As15Se60-x (x = 0; 1; 2; 3; 4; 5) compositions are prepared; their transmission range, optical band gap energy, thermal properties and stability against crystallization are studied. It is shown that these glasses have a high transparency in the mid-IR region (from 0.8 to 15 μm), a high glass transition temperature (≥320 °C) and a low tendency to crystallize. The optical band gap energy of GaxGe25As15Se60-x (x = 0; 1; 2; 3; 4; 5) glasses decreases from 1.68 to 1.43 eV as the gallium content increases and the selenium decreases. Their glass network, according to IR spectroscopy data, consists of Ge(Se1/2)4 tetrahedrons and AsSe3/2 pyramids. The Ga2Ge25As15Se58 and Ga3Ge25As15Se57 glasses have highest stability against crystallization. The content of hydrogen and oxygen impurities in the purest glass samples, fabricated using a combination of chemical distillation purification method and vapor transport reaction technique, does not exceed 0.06 ppm (wt) and 0.5 ppm (wt), respectively.

Mid-infrared performance of single mode chalcogenide fibers

Science.gov (United States)

Cook, Justin; Sincore, Alex; Tan, Felix; El Halawany, Ahmed; Riggins, Anthony; Shah, Lawrence; Abouraddy, Ayman F.; Richardson, Martin C.; Schepler, Kenneth L.

2018-02-01

Due to the intrinsic absorption edge in silica near 2.4 μm, more exotic materials are required to transmit laser power in the IR such as fluoride or chalcogenide glasses (ChGs). In particular, ChG fibers offer broad IR transmission with low losses fibers at four different infrared wavelengths: 2053 nm, 2520 nm and 4550 nm. Polymer clad ChG fibers were drawn with 12.3 μm and 25 μm core diameters. Testing at 2053 nm was accomplished using a > 15 W, CW Tm:fiber laser. Power handling up to 10.2 W with single mode beam quality has been demonstrated, limited only by the available Tm:fiber output power. Anti-reflective coatings were successfully deposited on the ChG fiber facets, allowing up to 90.6% transmission with 12.2 MW/cm2 intensity on the facet. Single mode guidance at 4550 nm was also demonstrated using a quantum cascade laser (QCL). A custom optical system was constructed to efficiently couple the 0.8 NA QCL radiation into the 0.2 NA ChG fiber, allowing for a maximum of 78% overlap between the QCL radiation and fundamental mode of the fiber. With an AR-coated, 25 μm core diameter fiber, >50 mW transmission was demonstrated with > 87% transmission. Finally, we present results on fiber coupling from a free space Cr:ZnSe resonator at 2520 nm.

Low-loss, robust fusion splicing of silica to chalcogenide fiber for integrated mid-infrared laser technology development.

Science.gov (United States)

Thapa, Rajesh; Gattass, Rafael R; Nguyen, Vinh; Chin, Geoff; Gibson, Dan; Kim, Woohong; Shaw, L Brandon; Sanghera, Jasbinder S

2015-11-01

We demonstrate a low-loss, repeatable, and robust splice between single-mode silica fiber and single-mode chalcogenide (CHG) fiber. These splices are particularly difficult to create because of the significant difference in the two fibers' glass transition temperatures (∼1000°C) as well as the large difference in the coefficients of thermal expansion between the fibers (∼20×10(-6)/°C). With 90% light coupled through the silica-CHG fiber splice, predominantly in the fundamental circular-symmetric mode, into the core of the CHG fiber and with 0.5 dB of splice loss measured around the wavelength of 2.5 μm, after correcting only for the Fresnel loss, the silica-CHG splice offers excellent beam quality and coupling efficiency. The tensile strength of the splice is greater than 12 kpsi, and the laser damage threshold is greater than 2 W (CW) and was limited by the available laser pump power. We also utilized this splicing technique to demonstrate 2 to 4.5 μm ultrabroadband supercontinuum generation in a monolithic all-fiber system comprising a CHG fiber and a high peak power 2 μm pulsed Raman-shifted thulium fiber laser. This is a major development toward compact form factor commercial applications of soft-glass mid-IR fibers.

Fabrication of ultrafast laser written low-loss waveguides in flexible As₂S₃ chalcogenide glass tape.

Science.gov (United States)

Lapointe, Jerome; Ledemi, Yannick; Loranger, Sébastien; Iezzi, Victor Lambin; Soares de Lima Filho, Elton; Parent, Francois; Morency, Steeve; Messaddeq, Younes; Kashyap, Raman

2016-01-15

As2S3 glass has a unique combination of optical properties, such as wide transparency in the infrared region and a high nonlinear coefficient. Recently, intense research has been conducted to improve photonic devices using thin materials. In this Letter, highly uniform rectangular single-index and 2 dB/m loss step-index optical tapes have been drawn by the crucible technique. Low-loss (writing process in thin glass is also presented to facilitate a repeatable waveguide inscription recipe.

Experimental Investigation on Cutting Characteristics in Nanometric Plunge-Cutting of BK7 and Fused Silica Glasses.

Science.gov (United States)

An, Qinglong; Ming, Weiwei; Chen, Ming

2015-03-27

Ductile cutting are most widely used in fabricating high-quality optical glass components to achieve crack-free surfaces. For ultra-precision machining of brittle glass materials, critical undeformed chip thickness (CUCT) commonly plays a pivotal role in determining the transition point from ductile cutting to brittle cutting. In this research, cutting characteristics in nanometric cutting of BK7 and fused silica glasses, including machined surface morphology, surface roughness, cutting force and specific cutting energy, were investigated with nanometric plunge-cutting experiments. The same cutting speed of 300 mm/min was used in the experiments with single-crystal diamond tool. CUCT was determined according to the mentioned cutting characteristics. The results revealed that 320 nm was found as the CUCT in BK7 cutting and 50 nm was determined as the size effect of undeformed chip thickness. A high-quality machined surface could be obtained with the undeformed chip thickness between 50 and 320 nm at ductile cutting stage. Moreover, no CUCT was identified in fused silica cutting with the current cutting conditions, and brittle-fracture mechanism was confirmed as the predominant chip-separation mode throughout the nanometric cutting operation.

Efficient Mid-Infrared Supercontinuum Generation in Tapered Large Mode Area Chalcogenide Photonic Crystal Fibers

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Engelsholm, Rasmus Dybbro; Markos, Christos

2017-01-01

Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source.......Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source....

Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

Directory of Open Access Journals (Sweden)

Chen Yubin

2016-09-01

Full Text Available Photoelectrochemical (PEC water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, GaSe2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

Theoretical prediction of the structural properties of uranium chalcogenides under high pressure

Science.gov (United States)

Kapoor, Shilpa; Yaduvanshi, Namrata; Singh, Sadhna

2018-05-01

Uranium chalcogenides crystallize in rock salt structure at normal condition and transform to Cesium Chloride structure at high pressure. We have investigated the transition pressure and volume drop of USe and UTe using three body potential model (TBIP). Present model includes long range Columbic, three body interaction forces and short range overlap forces operative up to next nearest neighbors. We have reported the phase transition pressure, relative volume collapses, the thermo physical properties such as molecular force constant (f), infrared absorption frequency (v0), Debye temperature (θD) and Gruneisen parameter (γ) of present chalcogenides and found that our results in general good agreement with experimental and other theoretical data.

2D Metal Chalcogenides Incorporated into Carbon and their Assembly for Energy Storage Applications.

Science.gov (United States)

Deng, Zongnan; Jiang, Hao; Li, Chunzhong

2018-05-01

2D metal chalcogenides have become a popular focus in the energy storage field because of their unique properties caused by their single-atom thicknesses. However, their high surface energy and van der Waals attraction easily cause serious stacking and restacking, leading to the generation of more inaccessible active sites with rapid capacity fading. The hybridization of 2D metal chalcogenides with highly conductive materials, particularly, incorporating ultrasmall and few-layered metal chalcogenides into carbon frameworks, can not only maximize the exposure of active sites but also effectively avoid their stacking and aggregation during the electrochemical reaction process. Therefore, a satisfactory specific capacity will be achieved with a long cycle life. In this Concept, the representative progress on such intriguing nanohybrids and their applications in energy storage devices are mainly summarized. Finally, an outlook of the future development and challenges of such nanohybrids for achieving an excellent energy storage capability is also provided. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

X-ray electron spectra of chalcogenide glasses and polycrystalline alloys of Ge-Te and As-Te systems

International Nuclear Information System (INIS)

Panus, V.R.

1990-01-01

Comparative investigation into structures of crystals and glasses in Ge-Te and As-Te two-component systems was conducted. Analysis of x-ray electron spectra of Ge-Te and As-Te systems indicates, that processes of dissociation-association resulting in formation of new structure units occur in telluride melts at synthesis temperatures. Structural chemical composition of binary glass-like alloys of Ge-Te and As-Te systems differs essentially from the one that corresponds to fusibility equilibrium curve. Oxygen doping into tellurium-base glasses results mainly in occurence of structures forecasted due to thermochemical calculation

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

Various on-chip sensors with microfluidics for biological applications.

Science.gov (United States)

Lee, Hun; Xu, Linfeng; Koh, Domin; Nyayapathi, Nikhila; Oh, Kwang W

2014-09-12

In this paper, we review recent advances in on-chip sensors integrated with microfluidics for biological applications. Since the 1990s, much research has concentrated on developing a sensing system using optical phenomena such as surface plasmon resonance (SPR) and surface-enhanced Raman scattering (SERS) to improve the sensitivity of the device. The sensing performance can be significantly enhanced with the use of microfluidic chips to provide effective liquid manipulation and greater flexibility. We describe an optical image sensor with a simpler platform for better performance over a larger field of view (FOV) and greater depth of field (DOF). As a new trend, we review consumer electronics such as smart phones, tablets, Google glasses, etc. which are being incorporated in point-of-care (POC) testing systems. In addition, we discuss in detail the current optical sensing system integrated with a microfluidic chip.

Changes of sulphide glasses caused by the presence of As

Czech Academy of Sciences Publication Activity Database

Kalužný, J.; Pedlíková, Jitka; Zavadil, Jiří; Labaš, V.

2007-01-01

Roč. 9, č. 10 (2007), s. 3076-3078 ISSN 1454-4164. [ ANC -3: International Conference on Amourphous and Nanostructured Chalcogenides /3./. Brasov, 02.07.20007-06.07.2007] R&D Projects: GA ČR GA104/02/0799; GA ČR GA104/05/0878 Grant - others:GA SR(SK) APVV-20-043505; GA SR(SK) APVT-20-011304; VEGA(SK) 1/1080/04 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z40320502 Source of funding: V - iné verejné zdroje ; V - iné verejné zdroje ; V - iné verejné zdroje Keywords : glass * electrical conductivity * transmission * dielectric properties * arsenic compounds Subject RIV: CA - Inorganic Chemistry Impact factor: 0.827, year: 2007

Characterization of structural relaxation in inorganic glasses using length dilatometry

Science.gov (United States)

Koontz, Erick

characterization technique is comprised of three main components: experimental measurements, fitting of configurational length change, and description of glass behavior by analysis of fitting parameters. N-BK7 optical glass from Schott was used as the proof of concept glass but the main scientific interest was in three chalcogenide glasses: As40Se 60, As20Se80, and Ge17.9As19.7 Se62.4. The dilatometric experiments were carried out using a thermomechanical analyzer (TMA) on glass sample that were synthesized by the author, in all cases except N-BK7. Isothermal structural relaxation measurements were done on (12 mm tall x 3 mm x 3 mm) beams placed vertically in the TMA. The samples were equilibrated at a starting temperature (T 0) until structural equilibrium was reached then a temperature down step was initiated to the final temperature (T 1) and held isothermally until relaxation concluded. The configurational aspect of length relaxation, and therefore volume relaxation was extracted and fit with a Prony series. The Prony series parameters indicated a number of relaxation events occurring within the glass on timescales typically an order of magnitude apart in time. The data analysis showed as many as 4 discrete relaxation times at lower temperatures. The number of discrete relaxation decreased as the temperature increased until just one single relaxation was left in the temperature range just at or above Tg. In the case of N-BK7 these trends were utilized to construct a simple model that could be applied to glass manufacturing in the areas of annealing or PGM. A future development of a rather simple finite element model (FEM) would easily be able to use this model to predict the exponential-like, temperature and time dependent relaxation behaviors of the glass. The predictive model was not extended to the chalcogenide glass studied here, but could easily be applied to them in the future. The relaxation time trends versus temperature showed a definite region of transition between a

Microfluidic Platform for the Long-Term On-Chip Cultivation of Mammalian Cells for Lab-On-A-Chip Applications.

Science.gov (United States)

Bunge, Frank; Driesche, Sander van den; Vellekoop, Michael J

2017-07-10

Lab-on-a-Chip (LoC) applications for the long-term analysis of mammalian cells are still very rare due to the lack of convenient cell cultivation devices. The difficulties are the integration of suitable supply structures, the need of expensive equipment like an incubator and sophisticated pumps as well as the choice of material. The presented device is made out of hard, but non-cytotoxic materials (silicon and glass) and contains two vertical arranged membranes out of hydrogel. The porous membranes are used to separate the culture chamber from two supply channels for gases and nutrients. The cells are fed continuously by diffusion through the membranes without the need of an incubator and low requirements on the supply of medium to the assembly. The diffusion of oxygen is modelled in order to find the optimal dimensions of the chamber. The chip is connected via 3D-printed holders to the macroscopic world. The holders are coated with Parlyene C to ensure that only biocompatible materials are in contact with the culture medium. The experiments with MDCK-cells show the successful seeding inside the chip, culturing and passaging. Consequently, the presented platform is a step towards Lab-on-a-Chip applications that require long-term cultivation of mammalian cells.

Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

Directory of Open Access Journals (Sweden)

Yongfeng Tong

2016-02-01

Full Text Available This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon–chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon–chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules.

Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

Science.gov (United States)

Rani, Sunita; Mohan, Devendra; Kumar, Manish; Sanjay

2018-05-01

Third order nonlinear susceptibility of (GeSe3.5)100-xBix (x = 0, 10, 14) and ZnxSySe100-x-y (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) amorphous chalcogenide thin films prepared using thermal evaporation technique is estimated. The dielectric constant at incident and third harmonic wavelength is calculated using "PARAV" computer program. 1064 nm wavelength of Nd: YAG laser is incident on thin film and third harmonic signal at 355 nm wavelength alongwith fundamental light is obtained in reflection that is separated from 1064 nm using suitable optical filter. Reflected third harmonic signal is measured to trace the influence of Bi and Zn on third order nonlinear susceptibility and is found to increase with increase in Bi and Zn content in (GeSe3.5)100-xBix, and ZnxSySe100-x-y chalcogenide thin films respectively. The excellent optical nonlinear property shows the use of chalcogenide thin films in photonics for wavelength conversion and optical data processing.

THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

DEFF Research Database (Denmark)

Bao, Hualong; Markos, Christos; Nielsen, Kristian

2014-01-01

In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

Fabrication of Glass Microchannel via Glass Imprinting using a Vitreous Carbon Stamp for Flow Focusing Droplet Generator

Science.gov (United States)

Refatul Haq, Muhammad; Kim, Youngkyu; Kim, Jun; Oh, Pyoung-hwa; Ju, Jonghyun; Kim, Seok-Min; Lim, Jiseok

2017-01-01

This study reports a cost-effective method of replicating glass microfluidic chips using a vitreous carbon (VC) stamp. A glass replica with the required microfluidic microstructures was synthesized without etching. The replication method uses a VC stamp fabricated by combining thermal replication using a furan-based, thermally-curable polymer with carbonization. To test the feasibility of this method, a flow focusing droplet generator with flow-focusing and channel widths of 50 µm and 100 µm, respectively, was successfully fabricated in a soda-lime glass substrate. Deviation between the geometries of the initial shape and the vitreous carbon mold occurred because of shrinkage during the carbonization process, however this effect could be predicted and compensated for. Finally, the monodispersity of the droplets generated by the fabricated microfluidic device was evaluated. PMID:29286341

Fabrication of Glass Microchannel via Glass Imprinting using a Vitreous Carbon Stamp for Flow Focusing Droplet Generator

Directory of Open Access Journals (Sweden)

Hyungjun Jang

2017-12-01

Full Text Available This study reports a cost-effective method of replicating glass microfluidic chips using a vitreous carbon (VC stamp. A glass replica with the required microfluidic microstructures was synthesized without etching. The replication method uses a VC stamp fabricated by combining thermal replication using a furan-based, thermally-curable polymer with carbonization. To test the feasibility of this method, a flow focusing droplet generator with flow-focusing and channel widths of 50 µm and 100 µm, respectively, was successfully fabricated in a soda-lime glass substrate. Deviation between the geometries of the initial shape and the vitreous carbon mold occurred because of shrinkage during the carbonization process, however this effect could be predicted and compensated for. Finally, the monodispersity of the droplets generated by the fabricated microfluidic device was evaluated.

Molecular structure of virgin and Tg cycled (Ag2Se)x (AsSe)1-x bulk glasses

Science.gov (United States)

Wachtman, Jacob; Chen, Ping; Boochand, P.

2009-03-01

AsSe, the base glass (x = 0) in the titled ternary, is an interesting example of a chalcogenide that is partially de-mixed into As4Se4 molecules segregated from a connected AsSe network, with the latter determining glass network properties. Raman scattering reveals sharp modes of the Realgar molecules that are superimposed on broad modes coming from of the backbone. Upon Tg cycling virgin samples (as quenched melts), the concentration of de-mixed As4Se4 molecules decreases, suggesting that thermally induced polymerization occurs; molecules break up to form part of the connective tissue. Modulated DSC experiments reveal a broad exotherm near 140 ^oC in virgin samples, which becomes nearly extinct in Tg cycled samples. The exotherm may represent Realgar molecules nano-crystallizing as the temperature approaches Tg. Compositional trends in thermal parameters such as Tg(x), δCp(x), and the δHnr(x) as a function of Ag2Se content `x' of the glasses will be reported.

Thermal, electronic and ductile properties of lead-chalcogenides under pressure.

Science.gov (United States)

Gupta, Dinesh C; Bhat, Idris Hamid

2013-09-01

Fully relativistic pseudo-potential ab-initio calculations have been performed to investigate the high pressure phase transition, elastic and electronic properties of lead-chalcogenides including the less known lead polonium. The calculated ground state parameters, for the rock-salt structure show good agreement with the experimental data. PbS, PbSe, PbTe and PbPo undergo a first-order phase transition from rock-salt to CsCl structure at 19.4, 15.5, 11.5 and 7.3 GPa, respectively. The elastic properties have also been calculated. The calculations successfully predicted the location of the band gap at L-point of Brillouin zone and the band gap for each material at ambient pressure. It is observed that unlike other lead-chalcogenides, PbPo is semi-metal at ambient pressure. The pressure variation of the energy gap indicates that these materials metalize under pressure. The electronic structures of these materials have been computed in parent as well as in high pressure B2 phase.

Various On-Chip Sensors with Microfluidics for Biological Applications

Directory of Open Access Journals (Sweden)

Hun Lee

2014-09-01

Full Text Available In this paper, we review recent advances in on-chip sensors integrated with microfluidics for biological applications. Since the 1990s, much research has concentrated on developing a sensing system using optical phenomena such as surface plasmon resonance (SPR and surface-enhanced Raman scattering (SERS to improve the sensitivity of the device. The sensing performance can be significantly enhanced with the use of microfluidic chips to provide effective liquid manipulation and greater flexibility. We describe an optical image sensor with a simpler platform for better performance over a larger field of view (FOV and greater depth of field (DOF. As a new trend, we review consumer electronics such as smart phones, tablets, Google glasses, etc. which are being incorporated in point-of-care (POC testing systems. In addition, we discuss in detail the current optical sensing system integrated with a microfluidic chip.

From glass to crystal - Nucleation, growth and de-mixing, from research to applications

International Nuclear Information System (INIS)

Neuville, Daniel R.; Cormier, Laurent; Caurant, Daniel; Montagne, Lionel; Charpentier, Thibault; Chevalier, Jerome; Comte, Monique; Dargaud, Olivier; Ligny, Dominique de; Deniard, Philippe; Dussardier, Bernard; Dussauze, Marc; Fargin, Evelyne; Gremillard, Laurent; Gredin, Patrick; Jousseaume, Cecile; Lafait, Jacques; Lancry, Mathieu; Lefebvre, Leila; Levelut, Claire; Magallanes-Pedromo, Marlin; Massiot, Dominique; Mear, Francois O.; Meille, Sylvain; Meng, Nicolas; Mortier, Michel; Papin, Sophie; Papon, Gautier; Pastouret, Main; Petit, Yannick; Poumellec, Bertrand; Pradel, Annie; Reillon, Vincent; Rodriguez, Vincent; Rogez, Jacques; Roussel, Pascal; Royon, Arnaud; Schuller, Sophie; Tricot, Gregory; Vigouroux, Helene

2013-01-01

optics and glass-ceramics, the laser-oriented micro- and nano-crystallisation to induce non linear optical properties, the case of oxi-fluorinated glass-ceramics, the nucleation, crystallisation and phase separation in chalcogenide glasses, the use of glass-ceramics for waste confinement, and crystalline enamels

Polymer Micro- and Nanofabrication for On-Chip Immune Cell Handling

DEFF Research Database (Denmark)

Hobæk, Thor Christian

, disposable polymer chips were fabricated by injection molding and ultrasonic welding for the generation of a large number of mature DCs in a closed microfluidic perfusion culture. By using low gas permeable tubings and chip materials, a constant pH and bubble-free culture medium was maintained for 7 days...... olefin copolymer (COC) over large surface areas by injection molding, using nanostructured mold inlays patterned by high-throughput deep-UV stepper photolithography. Injection molding at constant mold temperature below the glass transition point was significantly improved using nanostructured ceramic...... outside a CO2 cell incubator. Numerical simulations of oxygen transport were performed to establish guidelines for medium exchange rates in an impermeable culture system. Maturation of CD83+ mature DCs generated from CD14+ monocytes was demonstrated inside the disposable culture chip, with a yield almost...

Preparation and physical properties of luminescent 80GeSe(2) center dot (20-x)Sb2Se3 center dot xSb(2)Te(y):Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4

Czech Academy of Sciences Publication Activity Database

Frumarová, Božena; Frumar, M.; Oswald, Jiří; Kincl, Miloslav; Parchanski, V.

2013-01-01

Roč. 134, Feb 2013 (2013), s. 558-565 ISSN 0022-2313 R&D Projects: GA MŠk(CZ) LH11101; GA ČR GA203/09/0827 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : chalcogenide glasses * MID IR luminescence Subject RIV: CA - Inorganic Chemistry Impact factor: 2.367, year: 2013

Thermo-tunable hybrid photonic crystal fiber based on solution-processed chalcogenide glass nanolayers

DEFF Research Database (Denmark)

Markos, Christos

2016-01-01

the air-capillaries of the fiber based on a solution-processed glass approach. The deposited high-index layers revealed antiresonant transmission windows from similar to 500 nm up to similar to 1300 nm. We experimentally demonstrate for the first time the possibility to thermally-tune the revealed....../degrees C at 1300 nm. The proposed fiber device could potentially constitute an efficient route towards realization of monolithic tunable fiber filters or sensing elements....

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Carey, John J.; Allen, Jeremy P. [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Watson, Graeme W., E-mail: watsong@tcd.ie [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland)

2014-05-01

In this study, density functional theory is used to evaluate the electronic structure of the antimony chalcogenide series. Analysis of the electronic density of states and charge density shows that asymmetric density, or ‘lone pairs’, forms on the Sb{sup III} cations in the distorted oxide, sulphide and selenide materials. The asymmetric density progressively weakens down the series, due to the increase in energy of valence p states from O to Te, and is absent for Sb{sub 2}Te{sub 3}. The fundamental and optical band gaps were calculated and Sb{sub 2}O{sub 3}, Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have indirect band gaps, while Sb{sub 2}Te{sub 3} was calculated to have a direct band gap at Γ. The band gaps are also seen to reduce from Sb{sub 2}O{sub 3} to Sb{sub 2}Te{sub 3}. The optical band gap for Sb{sub 2}O{sub 3} makes it a candidate as a transparent conducting oxide, while Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have suitable band gaps for thin film solar cell absorbers. - Graphical abstract: A schematic illustrating the interaction between the Sb{sup III} cations and the chalcogenide anions and the change in their respective energy levels down the series. - Highlights: • The electronic structure of the antimony chalcogenide series is modelled using DFT. • Asymmetric density is present on distorted systems and absent on the symmetric telluride system. • Asymmetric density is formed from the mixing of Sb 5s and anion p states, where the anti-bonding combination is stabilised by the Sb 5p states. • The asymmetric density weakens down the series due to the increase in energy of chalcogenide p states. • The increase in energy of the anion p states reduces the fundamental and optical band gaps.

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Directory of Open Access Journals (Sweden)

Georgios S. E. Antipas

2015-01-01

Full Text Available The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge–Se bonding in favor of Se-In while the contribution of Se–Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge–Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge–Se and Se–Se networks.

1D - photonic crystals prepared from the amorphous chalcogenide films

Czech Academy of Sciences Publication Activity Database

Kohoutek, T.; Orava, J.; Wágner, T.; Hrdlička, M.; Vlček, Milan; Frumar, M.

2009-01-01

Roč. 20, - (2009), S346-S350 ISSN 0957-4522. [International Conference of Optical and Optoelectronic Materials and Applications. London, 29.07.2007-03.08.2007] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 1.020, year: 2009

Eruption Depths, Magma Storage and Magma Degassing at Sumisu Caldera, Izu-Bonin Arc: Evidence from Glasses and Melt Inclusions

Science.gov (United States)

Johnson, E. R.

2015-12-01

Island arc volcanoes can become submarine during cataclysmal caldera collapse. The passage of a volcanic vent from atmospheric to under water environment involves complex modifications of the eruption style and subsequent transport of the pyroclasts. Here, we use FTIR measurements of the volatile contents of glass and melt inclusions in the juvenile pumice clasts in the Sumisu basin and its surroundings (Izu-Bonin arc) to investigate changes in eruption depths, magma storage and degassing over time. This study is based on legacy cores from ODP 126, where numerous unconsolidated (250 m), massive to normally graded pumice lapilli-tuffs were recovered over four cores (788C, 790A, 790B and 791A). Glass and clast geochemistry indicate the submarine Sumisu caldera as the source of several of these pumice lapilli-tuffs. Glass chips and melt inclusions from these samples were analyzed using FTIR for H2O and CO2 contents. Glass chips record variable H2O contents; most chips contain 0.6-1.6 wt% H2O, corresponding to eruption depths of 320-2100 mbsl. Variations in glass H2O and pressure estimates suggest that edifice collapse occurred prior-to or during eruption of the oldest of these samples, and that the edifice may have subsequently grown over time. Sanidine-hosted melt inclusions from two units record variably degassed but H2O-rich melts (1.1-5.6 wt% H2O). The lowest H2O contents overlap with glass chips, consistent with degassing and crystallization of melts until eruption, and the highest H2O contents suggest that large amounts of degassing accompanied likely explosive eruptions. Most inclusions, from both units, contain 2-4 wt% H2O, which further indicates that the magmas crystallized at pressures of ~50-100 MPa, or depths ~400-2800 m below the seafloor. Further glass and melt inclusion analyses, including major element compositions, will elucidate changes in magma storage, degassing and evolution over time.

Microfluidic PMMA interfaces for rectangular glass capillaries

International Nuclear Information System (INIS)

Evander, Mikael; Tenje, Maria

2014-01-01

We present the design and fabrication of a polymeric capillary fluidic interface fabricated by micro-milling. The design enables the use of glass capillaries with any kind of cross-section in complex microfluidic setups. We demonstrate two different designs of the interface; a double-inlet interface for hydrodynamic focusing and a capillary interface with integrated pneumatic valves. Both capillary interfaces are presented together with examples of practical applications. This communication shows the design optimization and presents details of the fabrication process. The capillary interface opens up for the use of complex microfluidic systems in single-use glass capillaries. They also enable simple fabrication of glass/polymer hybrid devices that can be beneficial in many research fields where a pure polymer chip negatively affects the device's performance, e.g. acoustofluidics. (technical note)

Machinability of lithium disilicate glass ceramic in in vitro dental diamond bur adjusting process.

Science.gov (United States)

Song, Xiao-Fei; Ren, Hai-Tao; Yin, Ling

2016-01-01

Esthetic high-strength lithium disilicate glass ceramics (LDGC) are used for monolithic crowns and bridges produced in dental CAD/CAM and oral adjusting processes, which machinability affects the restorative quality. A machinability study has been made in the simulated oral clinical machining of LDGC with a dental handpiece and diamond burs, regarding the diamond tool wear and chip control, machining forces and energy, surface finish and integrity. Machining forces, speeds and energy in in vitro dental adjusting of LDGC were measured by a high-speed data acquisition and force sensor system. Machined LDGC surfaces were assessed using three-dimensional non-contact chromatic confocal optical profilometry and scanning electron microscopy (SEM). Diamond bur morphology and LDGC chip shapes were also examined using SEM. Minimum tool wear but significant LDGC chip accumulations were found. Machining forces and energy significantly depended on machining conditions (pceramics (pceramics (pceramics. Surface roughness for machined LDGC was comparable for other glass ceramics. The removal mechanisms of LDGC were dominated by penetration-induced brittle fracture and shear-induced plastic deformation. Unlike most other glass ceramics, distinct intergranular and transgranular fractures of lithium disilicate crystals were found in LDGC. This research provides the fundamental data for dental clinicians on the machinability of LDGC in intraoral adjustments. Copyright © 2015 Elsevier Ltd. All rights reserved.

Preparation of high-purity Pr{sup 3+} doped Ge–As–Se–In–I glasses for active mid-infrared optics

Energy Technology Data Exchange (ETDEWEB)

Karaksina, E.V.; Shiryaev, V.S., E-mail: shiryaev@ihps.nnov.ru; Kotereva, T.V.; Velmuzhov, A.P.; Ketkova, L.A.; Snopatin, G.E.

2016-09-15

The multi-stage method for the synthesis of high-purity Ge–As–Se–In–I glasses doped with Pr{sup 3+} ions is developed. It is based on the chemical distillation purification of glass-forming melt and the chemical transport reactions for purification and vacuum loading of indium. The level of purity of glasses, synthesized by this method, is higher in comparison with the traditional direct melting method for glass synthesis. The high-purity Pr{sup 3+}-doped Ge–As–Se–In and Pr{sup 3+}-doped Ge–As–Se–In–I glass samples are prepared; the optical, thermal and luminescent properties are investigated. The purest host glass samples, obtained by the multi-stage purification techniques, contain a low concentration of limiting impurities: hydrogen − ≤0.05 ppm (wt) and oxygen − ≤0.1 ppm (wt), that is, at present, the best result for multi-component chalcogenide glasses for mid-IR active fibers. The samples of Pr{sup 3+}-doped Ge–As–Se–In glass fibers have the minimum optical losses of 0.58 dB/m at the wavelength of 2.72 μm and exhibit an intense broadband luminescence in the spectral range of 3.5–5.5 μm, with a maximum shifted to longer wavelengths as compared with the bulk samples.

A feasibility study of unconventional planar ligand spacers in chalcogenide nanocrystals.

Science.gov (United States)

Lukose, Binit; Clancy, Paulette

2016-05-18

The solar cell efficiency of chalcogenide nanocrystals (quantum dots) has been limited in the past by the insulation between neighboring quantum dots caused by intervening, often long-chain, aliphatic ligands. We have conducted a computationally based feasibility study to investigate the use of ultra-thin, planar, charge-conducting ligands as an alternative to traditional long passive ligands. Not only might these radically unconventional ligands decrease the mean distance between adjacent quantum dots, but, since they are charge-conducting, they have the potential to actively enhance charge migration. Our ab initio studies compare the binding energies, electronic energy gaps, and absorption characteristics for both conventional and unconventional ligands, such as phthalocyanines, porphyrins and coronene. This comparison identified these unconventional ligands with the exception of titanyl phthalocyanine, that bind to themselves more strongly than to the surface of the quantum dot, which is likely to be less desirable for enhancing charge transport. The distribution of finite energy levels of the bound system is sensitive to the ligand's binding site and the levels correspond to delocalized states. We also observed a trap state localized on a single Pb atom when a sulfur-containing phenyldithiocarbamate (PTC) ligand is attached to a slightly off-stoichiometric dot in a manner that the sulfur of the ligand completes stoichiometry of the bound system. Hence, this is indicative of the source of trap state when thio-based ligands are bound to chalcogenide nanocrystals. We also predict that titanyl phthalocyanine in a mix with chalcogenide dots of diameter ∼1.5 Å can form a donor-acceptor system.

Dr. Monaco Examines Lab-on a-Chip

Science.gov (United States)

2003-01-01

Dr. Lisa Monaco, Marshall Space Flight Center's (MSFC's) project scientist for the Lab-on-a-Chip Applications Development (LOCAD) program, examines a lab on a chip. The small dots are actually ports where fluids and chemicals can be mixed or samples can be collected for testing. Tiny channels, only clearly visible under a microscope, form pathways between the ports. Many chemical and biological processes, previously conducted on large pieces of laboratory equipment, can now be performed on these small glass or plastic plates. Monaco and other researchers at MSFC in Huntsville, Alabama, are customizing the chips to be used for many space applications, such as monitoring microbes inside spacecraft and detecting life on other planets. The portable, handheld Lab-on-a Chip Application Development Portable Test System (LOCAD-PTS) made its debut flight aboard Discovery during the STS-116 mission launched December 9, 2006. The system allowed crew members to monitor their environment for problematic contaminants such as yeast, mold, and even E.coli, and salmonella. Once LOCAD-PTS reached the International Space Station (ISS), the Marshall team continued to manage the experiment, monitoring the study from a console in the Payload Operations Center at MSFC. The results of these studies will help NASA researchers refine the technology for future Moon and Mars missions. (NASA/MSFC/D.Stoffer)

Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses

International Nuclear Information System (INIS)

Klym, H.; Ingram, A.; Shpotyuk, O.; Hotra, O.; Popov, A.I.

2016-01-01

Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS_2–20Ga_2S_3)_1_0_0_−_x(CsCl)_x, 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS_2–20Ga_2S_3)_1_0_0_−_x(CsCl)_x, 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS_2–20Ga_2S_3)_8_5(CsCl)_1_5 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defect-related voids. These trends are confirmed by positron-positronium decomposition algorithm. It is shown, that CsCl additives result in white shift in the visible regions in transmission spectra. The γ-irradiation of 80GeS_2–20Ga_2S_3 base glass leads to slight long-wavelength shift of the fundamental optical absorption edge and decreasing of transmission speaks in favor of possible formation of additional defects in glasses and their darkening. - Highlights: • CsCl additives in Ge–Ga–S glassy matrix lead to the agglomeration of voids. • Full crystallization of Ge–Ga–S–CsCl glasses corresponds to the formation of defect voids. • Gamma-irradiation of glass stimulates the creation of additional defects and darkening.

A flip chip process based on electroplated solder bumps

Science.gov (United States)

Salonen, J.; Salmi, J.

1994-01-01

Compared to wire bonding and TAB, flip chip technology using solder joints offers the highest pin count and packaging density and superior electrical performance. The chips are mounted upside down on the substrate, which can be made of silicon, ceramic, glass or - in some cases - even PCB. The extra processing steps required for chips are the deposition of a suitable thin film metal layer(s) on the standard Al pad and the formation of bumps. Also, the development of new fine line substrate technologies is required to utilize the full potential of the technology. In our bumping process, bump deposition is done by electroplating, which was chosen for its simplicity and economy. Sputter deposited molybdenum and copper are used as thin film layers between the aluminum pads and the solder bumps. A reason for this choice is that the metals can be selectively etched after bumping using the bumps as a mask, thus circumventing the need for a separate mask for etching the thin film metals. The bumps are electroplated from a binary Pb-Sn bath using a thick liquid photoresist. An extensively modified commercial flip chip bonder is used for alignment and bonding. Heat assisted tack bonding is used to attach the chips to the substrate, and final reflow joining is done without flux in a vacuum furnace.

Lab-on-a-Chip Instrument Development for Titan Exploration

Science.gov (United States)

Willis, P. A.; Greer, F.; Fisher, A.; Hodyss, R. P.; Grunthaner, F.; Jiao, H.; Mair, D.; Harrison, J.

2009-12-01

This contribution will describe the initial stages of a new ASTID-funded research program initiated in Fall 2009 aimed at lab-on-a-chip system development for astrobiological investigations on Titan. This technology development builds off related work at JPL and Berkeley [1-3] on the ultrasensitive compositional and chiral analysis of amino acids on Mars in order to search for signatures of past or present life. The Mars-focused instrument system utilizes a microcapillary electrophoresis (μCE) system integrated with on-chip perfluoropolyether (PFPE) membrane valves and pumps for automated liquid sample handling, on-chip derivitization of samples with fluorescent tags, dilution, and mixing with standards for data calibration. It utilizes a four-layer wafer stack design with CE channels patterned in glass, along with a PFPE membrane, a pneumatic manifold layer, and a fluidic bus layer. Three pneumatically driven on-chip diaphragm valves placed in series are used to peristaltically pump reagents, buffers, and samples to and from capillary electrophoresis electrode well positions. Electrophoretic separation occurs in the all-glass channels near the base of the structure. The Titan specific lab-on-a-chip system under development here focuses its attention on the unique organic chemistry of Titan. In order to chromatographically separate mixtures of neutral organics such as polycyclic aromatic hydrocarbons (PAHs), the Titan-specific microfluidic platform utilizes the related technique of microcapillary electrochromatography (μCEC). This technique differs from conventional μCE in that microchannels are filled with a porous stationary phase that presents surfaces upon which analyte species can adsorb/desorb. It is this additional surface interaction that enables separations of species critical to the understanding of the astrobiological potential of Titan that are not readily separated by the μCE technique. We have developed two different approaches for the integration

Impact of sulfur content on structural and optical properties of Ge20Se80-xSx chalcogenide glasses thin films

Science.gov (United States)

Dongol, M.; Elhady, A. F.; Ebied, M. S.; Abuelwafa, A. A.

2018-04-01

Chalcogenide system Ge20Se80-xSx (x = 0, 15 and 30%) thin films were prepared by thermal evaporation technique. The amorphous state of the samples was confirmed according to XRD. The structural changes occurring upon replacement Se by S was investigated using Raman spectroscopy. The optical properties of the as-deposited Ge20Se80-xSx thin films have been studied by analysis the transmittance T(λ) measured at room temperature in the wavelength range 200-2500 nm using Swanepoel's method. Urbach energy (Ee) and optical band gap (Eg) were strongly affected by sulfur concentration in the sample. The refractive index evaluated through envelope method was extrapolated by Cauchy dispersion relationship over the whole spectral range. Moreover, the dispersion of refractive index was analyzed in terms of the single-oscillator Wemple-Di Domenico model. The third-order nonlinear susceptibility (χ(3)) and nonlinear refractive index (n2) were calculated and discussed for different Ge20Se80-xSx (x = 0, 15 and 30%).

Mid-infrared supercontinuum generation spanning more than 11 μm in a chalcogenide step-index fiber

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis

2015-01-01

Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively.......Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively....

Simulation and experimental validation of a SU-8 based PCR thermocycler chip with integrated heaters and temperature sensor

DEFF Research Database (Denmark)

El-Ali, Jamil; Perch-Nielsen, Ivan R.; Poulsen, Claus Riber

2004-01-01

We present a SU-8 based polymerase chain reaction (PCR) chip with integrated platinum thin film heaters and temperature sensor. The device is fabricated in SU-8 on a glass substrate. The use of SU-8 provides a simple microfabrication process for the PCR chamber, controllable surface properties......C/s, respectively, the performance of the chip is comparable with the best silicon micromachined PCR chips presented in the literature. The SU-8 chamber surface was found to be PCR compatible by amplification of yeast gene ribosomal protein S3 and Campylobacter gene cadF. The PCR compatibility of the chamber...

Harshlight: a "corrective make-up" program for microarray chips

Directory of Open Access Journals (Sweden)

Wittkowski Knut M

2005-12-01

Full Text Available Abstract Background Microscopists are familiar with many blemishes that fluorescence images can have due to dust and debris, glass flaws, uneven distribution of fluids or surface coatings, etc. Microarray scans do show similar artifacts, which might affect subsequent analysis. Although all but the starkest blemishes are hard to find by the unaided eye, particularly in high-density oligonucleotide arrays (HDONAs, few tools are available to help with the detection of those defects. Results We develop a novel tool, Harshlight, for the automatic detection and masking of blemishes in HDONA microarray chips. Harshlight uses a combination of statistic and image processing methods to identify three different types of defects: localized blemishes affecting a few probes, diffuse defects affecting larger areas, and extended defects which may invalidate an entire chip. Conclusion We demonstrate the use of Harshlight can materially improve analysis of HDONA chips, especially for experiments with subtle changes between samples. For the widely used MAS5 algorithm, we show that compact blemishes cause an average of 8 gene expression values per chip to change by more than 50%, two of them by more than twofold; our masking algorithm restores about two thirds of this damage. Large-scale artifacts are successfully detected and eliminated.

http://www.tkea.com.ua/tkea/2008/6_2008/pdf/12.zip

Directory of Open Access Journals (Sweden)

Kavetskyy T. S.

2008-12-01

Full Text Available It is established radiation-induced decreasing in fragility of structural network takes place for γ-irradiated sample of Ge15,8As21S63,2 chalcogenide glass. It is concluded on the basis of the results obtained that radiation modification of chalcogenide glass leads to the rigidity of its matrix, and the vibrational (boson contribution in the low-frequency spectral region is dominatе on the relaxation quasi-elastic scattering.

Processing and characterization of new oxy-sulfo-telluride glasses in the Ge-Sb-Te-S-O system

International Nuclear Information System (INIS)

Smith, C.; Jackson, J.; Petit, L.; Rivero-Baleine, C.; Richardson, K.

2010-01-01

New oxy-sulfo-telluride glasses have been prepared in the Ge-Sb-Te-S-O system employing a two-step melting process which involves the processing of a chalcogenide glass (ChG) and subsequent melting with TeO 2 or Sb 2 O 3 . The progressive incorporation of O at the expense of S was found to increase the density and the glass transition temperature and to decrease the molar volume of the investigated oxy-sulfo-telluride glasses. We also observed a shift of the vis-NIR cut-off wavelength to longer wavelength probably due to changes in Sb coordination within the glass matrix and overall matrix polarizability. Using Raman spectroscopy, correlations have been shown between the formation of Ge- and Sb-based oxysulfide structural units and the S/O ratio. Lastly, two glasses with similar composition (Ge 20 Sb 6 S 64 Te 3 O 7 ) processed by melting the Ge 23 Sb 7 S 70 glass with TeO 2 or the Ge 23 Sb 2 S 72 Te 4 glass with Sb 2 O 3 were found to have slightly different physical, thermal, optical and structural properties. These changes are thought to result mainly from the higher moisture content and sensitivity of the TeO 2 starting materials as compared to that of the Sb 2 O 3 . - Graphical abstract: In this paper, we discuss our most recent findings on the processing and characterization of new ChG glasses prepared with small levels of Te, melted either with TeO 2 or Sb 2 O 3 powders. We explain how these new oxy-sulfo-telluride glasses are prepared and we correlate the physical, thermal and optical properties of the investigated glasses to the structure changes induced by the addition of oxygen in the Ge-Sb-S-Te glass network.

A volumetric meter chip for point-of-care quantitative detection of bovine catalase for food safety control.

Science.gov (United States)

Cui, Xingye; Hu, Jie; Choi, Jane Ru; Huang, Yalin; Wang, Xuemin; Lu, Tian Jian; Xu, Feng

2016-09-07

A volumetric meter chip was developed for quantitative point-of-care (POC) analysis of bovine catalase, a bioindicator of bovine mastitis, in milk samples. The meter chip displays multiplexed quantitative results by presenting the distance of ink bar advancement that is detectable by the naked eye. The meter chip comprises a poly(methyl methacrylate) (PMMA) layer, a double-sided adhesive (DSA) layer and a glass slide layer fabricated by the laser-etching method, which is typically simple, rapid (∼3 min per chip), and cost effective (∼$0.2 per chip). Specially designed "U shape" reaction cells are covered by an adhesive tape that serves as an on-off switch, enabling the simple operation of the assay. As a proof of concept, we employed the developed meter chip for the quantification of bovine catalase in raw milk samples to detect catalase concentrations as low as 20 μg/mL. The meter chip has great potential to detect various target analytes for a wide range of POC applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Handheld multi-channel LAPS device as a transducer platform for possible biological and chemical multi-sensor applications

International Nuclear Information System (INIS)

Wagner, Torsten; Molina, Roberto; Yoshinobu, Tatsuo; Kloock, Joachim P.; Biselli, Manfred; Canzoneri, Michelangelo; Schnitzler, Thomas; Schoening, Michael J.

2007-01-01

The light-addressable potentiometric sensor is a promising technology platform for multi-sensor applications and lab-on-chip devices. However, many prior LAPS developments suffer from their lack in terms of non-portability, insufficient robustness, complicate handling, etc. Hence, portable and robust LAPS-based measurement devices have been investigated by the authors recently. In this work, a 'chip card'-based light-addressable potentiometric sensor system is presented. The utilisation of ordinary 'chip cards' allows an easy handling of different sensor chips for a wide range of possible applications. The integration of the electronic and the mechanical set-up into a single reader unit results in a compact design with the benefits of portability and low required space. In addition, the presented work includes a new multi-frequency measurement procedure, based on an FFT algorithm, which enables the simultaneous real-time measurement of up to 16 sensor spots. The comparison between the former batch-LAPS and the new FFT-based LAPS set-up will be presented. The immobilisation of biological cells (CHO: Chinese hamster ovary) demonstrates the possibility to record their metabolic activity with 16 measurement spots on the same chip. Furthermore, a Cd 2+ -selective chalcogenide-glass layer together with a pH-sensitive Ta 2 O 5 layer validates the use of the LAPS for chemical multi-sensor applications

Iron based pnictide and chalcogenide superconductors studied by muon spin spectroscopy

International Nuclear Information System (INIS)

Shermadini, Zurab

2014-01-01

In the present thesis the superconducting properties of the Iron-based Ba 1-x Rb x Fe 2 As 2 arsenides, and A x Fe 2-y Se 2 (A=Cs,Rb,K) chalcogenides are investigated by means of Muon Spin Rotation Spectroscopy. The temperature and pressure dependence of the magnetic penetration depth is obtained form μSR experiments and analyzed to probe the superconducting gap-symmetries for each samples. The Ba 1-x Rb x Fe 2 As 2 system is described within the multi-gap s+s-wave scenario and results are discussed in the light of the suppression of inter-band processes upon hole doping. Due to the lowered upper critical field B c2 and reduced T c , a large section of B-T-p phase diagram is studied for the hole-overdoped x=1 case. By applying hydrostatic pressure, the RbFe 2 As 2 system exhibits a classical BCS superconducting characteristics. The A x Fe 2-y Se 2 chalcogenide represents a system containing magnetically ordered and superconducting phases simultaneously. In all investigated chalcogenide samples, about 90% of the total volume show the strong antiferromagnetic phase and 10% exhibit a paramagnetic behavior. Magnetization measurements reveal a 100% Meissner effect, while μSR clearly indicates that the paramagnetic phase is a perfect superconductor. Up to now, there is no clear evidence whether the antiferromagnetic phase is also superconducting. The microscopic coexistence and/or phase separation of superconductivity and magnetism is discussed. Moreover, a new hydrostatic double-wall pressure cell is developed and produced, satisfying the demands of μSR experiments. The designs and characteristics of the new pressure cell are reviewed in the present thesis.

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

2007-10-31

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

Science.gov (United States)

Liu, Bang-Gui

It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

Pressure dependence of crystal field splitting in Pr pnictides and chalcogenides

International Nuclear Information System (INIS)

Schirber, J.E.; Weaver, H.T.; Ginley, D.S.

1978-01-01

We have measured the pressure dependence of the Pr nuclear magnetic resonance shift in PrN, PrP, PrSb, PrAs, PrS and PrSe. The shifts in all the pnictides increase while in the chalcogenides the shifts decrease with pressure. The rare earth frequency shift is inversely proportional to the crystal field splitting in the context of the point charge model (PCM) so a decrease would be expected for all of these materials at a rate of 5/3 the volume compressibility. Our values for the pnictides tend to be considerably larger than the PCM value as well as the wrong sign. The chalcogenide values are much nearer in magnitude and are of the right sign for the PCM. Contrary to the report of Guertin et al. we see no anomaly in the pressure dependence of the susceptibility of PrS. The fact that PrN which is reported to be non-metallic also shows the wrong sign for the PCM presents difficulties for various conduction electron explanations for this unexpected behavior of the pnictides

Formation of surface nanolayers in chalcogenide crystals using coherent laser beams

Science.gov (United States)

Ozga, K.; Fedorchuk, A. O.; El-Naggar, A. M.; Albassam, A. A.; Kityk, V.

2018-03-01

We have shown a possibility to form laser modified surface nanolayers with thickness up to 60 nm in some ternary chalcogenide crystals (Ag3AsS3, Ag3SbS3, Tl3SbS3) The laser treatment was performed by two coherent laser beams split in a space. As the inducing lasers we have applied continuous wave (cw) Hesbnd Cd laser at wavelength 441 nm and doubled frequency cw Nd: YAG laser at 532 nm. The spectral energies of these lasers were higher with respect to the energy gaps of the studied crystals. The optical anisotropy was appeared and defected by monitoring of birefringence at probing wavelength of cw Hesbnd Ne laser at λ = 3390 nm. The changes of the laser stimulated near the surface layer morphology was monitored by TEM and AFM methods as well as by the reflected optical second harmonic generation at fundamental wavelength of microsecond CO2 laser generating at wavelength 10600 nm. This technique may open a new approach for the formation of the near the surface nanolayers in chalcogenides using external cw laser illumination.

Programmable lab-on-a-chip system for single cell analysis

Science.gov (United States)

Thalhammer, S.

2009-05-01

The collection, selection, amplification and detection of minimum genetic samples became a part of everyday life in medical and biological laboratories, to analyze DNA-fragments of pathogens, patient samples and traces on crime scenes. About a decade ago, a handful of researchers began discussing an intriguing idea. Could the equipment needed for everyday chemistry and biology procedures be shrunk to fit on a chip in the size of a fingernail? Miniature devices for, say, analysing DNA and proteins should be faster and cheaper than conventional versions. Lab-on-a-chip is an advanced technology that integrates a microfluidic system on a microscale chip device. The "laboratory" is created by means of channels, mixers, reservoirs, diffusion chambers, integrated electrodes, pumps, valves and more. With lab-ona- chip technology, complete laboratories on a square centimetre can be created. Here, a multifunctional programmable Lab-on-a-Chip driven by nanofluidics and controlled by surface acoustic waves (SAW) is presented. This system combines serial DNA-isolation-, amplification- and array-detection-process on a modified glass-platform. The fluid actuation is controlled via SAW by interdigital transducers implemented in the chemical modified chip surface. The chemical surface modification allows fluid handling in the sub-microliter range. Minute amount of sample material is extracted by laser-based microdissection out of e.g. histological sections at the single cell level. A few picogram of genetic material are isolated and transferred via a low-pressure transfer system (SPATS) onto the chip. Subsequently the genetic material inside single droplets, which behave like "virtual" beaker, is transported to the reaction and analysis centers on the chip surface via surface acoustic waves, mainly known as noise dumping filters in mobile phones. At these "biological reactors" the genetic material is processed, e.g. amplified via polymerase chain reaction methods, and genetically

A single microfluidic chip with dual surface properties for protein drug delivery.

Science.gov (United States)

Bokharaei, Mehrdad; Saatchi, Katayoun; Häfeli, Urs O

2017-04-15

Principles of double emulsion generation were incorporated in a glass microfluidic chip fabricated with two different surface properties in order to produce protein loaded polymer microspheres. The microspheres were produced by integrating two microfluidic flow focusing systems and a multi-step droplet splitting and mixing system into one chip. The chip consists of a hydrophobic and a hydrophilic section with two different heights, 12μm and 45μm, respectively. As a result, the protein is homogenously distributed throughout the polymer microsphere matrix, not just in its center (which has been studied before). In our work, the inner phase was bovine serum albumin (BSA) in phosphate buffered saline, the disperse phase was poly (lactic acid) in chloroform and the continuous phase was an aqueous solution of poly(vinyl alcohol). After solvent removal, BSA loaded microspheres with an encapsulation efficiency of up to 96% were obtained. Our results show the feasibility of producing microspheres loaded with a hydrophilic drug in a microfluidic system that integrates different microfluidic units into one chip. Copyright © 2017 Elsevier B.V. All rights reserved.

The Moessbauer effect in binary tin chalcogenides of tin 119

International Nuclear Information System (INIS)

Ortalli, I.; Fano, V.

1975-01-01

The values of the isomer shift, quadrupole splitting, Moessbauer coefficient, Debye temperature for the tin chalcogenides SnS. SnSe, SnTe are tabulated for the temperatures 80 and 300 K. Temperature dependences of the Moessbauer coefficient and of the effective Debye temperature for SnS, SnSe and SnTe in a temperature range of 78 to 300 K are presented. (Z.S.)

Making the invisible visible: a microfluidic chip using a low refractive index polymer.

Science.gov (United States)

Hanada, Yasutaka; Ogawa, Tatsuya; Koike, Kazuhiko; Sugioka, Koji

2016-07-07

Microfluidic frameworks known as micro-total-analysis-systems or lab-on-a-chip have become versatile tools in cell biology research, since functional biochips are able to streamline dynamic observations of various cells. Glass or polymers are generally used as the substrate due to their high transparency, chemical stability and cost-effectiveness. However, these materials are not well suited for the microscopic observation of cell migration at the fluid boundary due to the refractive index mismatch between the medium and the biochip material. For this reason, we have developed a new method of fabricating three-dimensional (3D) microfluidic chips made of the low refractive index fluoric polymer CYTOP. This novel fabrication procedure involves the use of a femtosecond laser for direct writing, followed by wet etching with a dilute fluorinated solvent and annealing, to create high-quality 3D microfluidic chips inside a polymer substrate. A microfluidic chip made in this manner enabled us to more clearly observe the flagellum motion of a Dinoflagellate moving in circles near the fluid surface compared to the observations possible using conventional microfluidic chips. We believe that CYTOP microfluidic chips made using this new method may allow more detailed analysis of various cell migrations near solid boundaries.

Optimizing Polymer Lab-on-Chip Platforms for Ultrasonic Manipulation: Influence of the Substrate

Directory of Open Access Journals (Sweden)

Itziar González

2015-05-01

Full Text Available The choice of substrate material in a chip that combines ultrasound with microfluidics for handling biological and synthetic microparticles can have a profound effect on the performance of the device. This is due to the high surface-to-volume ratio that exists within such small structures and acquires particular relevance in polymer-based resonators with 3D standing waves. This paper presents three chips developed to perform particle flow-through separation by ultrasound based on a polymeric SU-8 layer containing channelization over three different substrates: Polymethyl methacrylate (PMMA; Pyrex; and a cracked PMMA composite-like structure. Through direct observations of polystyrene microbeads inside the channel, the three checked chips exhibit their potential as disposable continuous concentration devices with different spatial pressure patterns at frequencies of resonance close to 1 Mhz. Chips with Pyrex and cracked PMMA substrates show restrictions on the number of pressure nodes established in the channel associated with the inhibition of 3D modes in the solid structure. The glass-substrate chip presents some advantages associated with lower energy requirements to collect particles. According to the results, the use of polymer-based chips with rigid substrates can be advantageous for applications that require short treatment times (clinical tests handling human samples and low-cost fabrication.

The effects of Sn addition on properties and structure in Ge-Se chalcogenide glass

Science.gov (United States)

Fayek, S. A.

2005-01-01

Far infrared transmission spectra of homogeneous compositions in the glassy alloy system Ge 1- xSn xSe 2.5 0⩽ x⩽0.6 have been observed in the spectral range 200-500 cm -1 at room temperature. The infrared absorption spectra show strong bands around 231, 284 and 311 cm -1 which were assigned to GeSe, SeSn, Se-Se. Tin atoms appear to substitute for the germanium atoms in the outrigger sites of Ge(Se 1/2) 4 tetrahedra up to 0.4. For x>0.5, the glasses show a new vibrational band of an isolated F 2 mode of the Ge-centered tetrahedra outside the clusters. A pronounced peculiarity (maximum or minimum) appeared at around the same value of the average coordination number at Z=2.65 for all composition dependence topological phase transition from two-dimensional (2D) layer type to three- dimensional (3D) cross-linked network structures in the glass. It is clear that the theoretical ν-values for Se-Se bond is less than the experimental one and that for Se-Ge is greater than the experimental one. This difference may be due to the existence of more close lying modes which tends to broaden the absorption bands. Quantitative justification of the absorption bands shows that theoretical wave numbers agree with its experimental values for Ge-Se stretching vibration bond.

A PDMS-Based Microfluidic Hanging Drop Chip for Embryoid Body Formation.

Science.gov (United States)

Wu, Huei-Wen; Hsiao, Yi-Hsing; Chen, Chih-Chen; Yet, Shaw-Fang; Hsu, Chia-Hsien

2016-07-06

The conventional hanging drop technique is the most widely used method for embryoid body (EB) formation. However, this method is labor intensive and limited by the difficulty in exchanging the medium. Here, we report a microfluidic chip-based approach for high-throughput formation of EBs. The device consists of microfluidic channels with 6 × 12 opening wells in PDMS supported by a glass substrate. The PDMS channels were fabricated by replicating polydimethyl-siloxane (PDMS) from SU-8 mold. The droplet formation in the chip was tested with different hydrostatic pressures to obtain optimal operation pressures for the wells with 1000 μm diameter openings. The droplets formed at the opening wells were used to culture mouse embryonic stem cells which could subsequently developed into EBs in the hanging droplets. This device also allows for medium exchange of the hanging droplets making it possible to perform immunochemistry staining and characterize EBs on chip.

A PDMS-Based Microfluidic Hanging Drop Chip for Embryoid Body Formation

Directory of Open Access Journals (Sweden)

Huei-Wen Wu

2016-07-01

Full Text Available The conventional hanging drop technique is the most widely used method for embryoid body (EB formation. However, this method is labor intensive and limited by the difficulty in exchanging the medium. Here, we report a microfluidic chip-based approach for high-throughput formation of EBs. The device consists of microfluidic channels with 6 × 12 opening wells in PDMS supported by a glass substrate. The PDMS channels were fabricated by replicating polydimethyl-siloxane (PDMS from SU-8 mold. The droplet formation in the chip was tested with different hydrostatic pressures to obtain optimal operation pressures for the wells with 1000 μm diameter openings. The droplets formed at the opening wells were used to culture mouse embryonic stem cells which could subsequently developed into EBs in the hanging droplets. This device also allows for medium exchange of the hanging droplets making it possible to perform immunochemistry staining and characterize EBs on chip.

Influence of Two Photon Absorption on Soliton Self-Frequency Shift

DEFF Research Database (Denmark)

Steffensen, Henrik; Rottwitt, Karsten; Jepsen, Peter Uhd

2011-01-01

The creation of mid-infrared supercontinua necessitates the use of soft-glass fibers. However, some materials, like chalcogenide, have a substantial two photon absorption. We introduce a model for soliton self-frequency shift that successfully includes this effect.......The creation of mid-infrared supercontinua necessitates the use of soft-glass fibers. However, some materials, like chalcogenide, have a substantial two photon absorption. We introduce a model for soliton self-frequency shift that successfully includes this effect....

FY 2005 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Ho, Nicolas; Krishnaswami, Kannan; Johnson, Bradley R.; Sundaram, S. K.; Riley, Bradley M.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2005-12-01

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions. During FY 2005, PNNL’s Infrared Photonics research team made measurable progress exploiting the extraordinary optical and material properties of chalcogenide glass to develop miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications. We investigated sulfur purification methods that will eventually lead to routine production of optical quality chalcogenide glass. We also discovered a glass degradation phenomenon and our investigation uncovered the underlying surface chemistry mechanism and developed mitigation actions. Key research was performed to understand and control the photomodification properties. This research was then used to demonstrate several essential infrared photonic devices, including LWIR single-mode waveguide devices and

Generation and Applications of High Average Power Mid-IR Supercontinuum in Chalcogenide Fibers

OpenAIRE

Petersen, Christian Rosenberg

2016-01-01

Mid-infrared supercontinuum with up to 54.8 mW average power, and maximum bandwidth of 1.77-8.66 μm is demonstrated as a result of pumping tapered chalcogenide photonic crystal fibers with a MHz parametric source at 4 μm

Design of the scanning mode coated glass color difference online detection system

Science.gov (United States)

Bi, Weihong; Zhang, Yu; Wang, Dajiang; Zhang, Baojun; Fu, Guangwei

2008-03-01

A design of scanning mode coated glass color difference online detection system was introduced. The system consisted of color difference data acquirement part and orbit control part. The function of the color difference data acquirement part was to acquire glass spectral reflectance and then processed them to get the color difference value. Using fiber for light guiding, the reflected light from surface of glass was transmitted into light division part, and the dispersive light was imaged on linear CCD, and then the output signals from the CCD was sampled pixel by pixel, and the spectral reflectance of coated glass was obtained finally. Then, the acquired spectral reflectance signals was sent to industrial personal computer through USB interface, using standard color space and color difference formula nominated by International Commission on Illumination (CIE) in 1976 to process these signals, and the reflected color parameter and color difference of coated glass was gained in the end. The function of the orbit control part was to move the detection probe by way of transverse scanning mode above the glass strip, and control the measuring start-stop time of the color difference data acquirement part at the same time. The color difference data acquirement part of the system was put on the orbit which is after annealing area in coated glass production line, and the protected fiber probe was placed on slide of the orbit. Using single chip microcomputer to control transmission mechanism of the slide, which made the slide move by way of transverse scanning mode on the glass strip, meanwhile, the color difference data acquirement part of the system was also controlled by the single chip microcomputer, and it made the acquirement part measure color difference data when the probe reached the needed working speed and required place on the glass strip. The scanning mode coated glass color difference online detection system can measure color parameter and color difference of

Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

Science.gov (United States)

Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

2017-08-01

Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

An electrochromatography chip with integrated waveguides for UV absorbance detection

International Nuclear Information System (INIS)

Gustafsson, O; Mogensen, K B; Ohlsson, P D; Kutter, J P; Liu, Y; Jacobson, S C

2008-01-01

A silicon-based microchip for electrochromatographic separations is presented. Apart from a microfluidic network, the microchip has integrated UV-transparent waveguides for detection and integrated couplers for optical fibers on the chip, yielding the most complete chromatography microchip to date in terms of the integration of optical components. The microfluidic network and the optical components are fabricated in a single etching step in silicon and subsequently thermally oxidized. The separation column consists of a regular array of microfabricated solid support structures with a monolayer of an octylsilane covalently bonded to the surfaces to provide chromatographic interaction. The chip features a 1 mm long U-shaped detection cell and planar silicon dioxide waveguides that couple light to and from the detection cell. Microfabricated on-chip fiber couplers assure perfect alignment of optical fibers to the waveguides. The entire oxidized silicon microchip structure is sealed with a glass lid. Reversed phase electrochromatographic separation of three neutral compounds is demonstrated using UV absorbance detection at 254 nm. Baseline separation of the analytes is achieved in less than two minutes

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

Energy Technology Data Exchange (ETDEWEB)

Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Hassan, M. Shafiq; Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Martin, Joshua [Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

2016-10-15

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.

Structural and electronic properties of high pressure phases of lead chalcogenides

Science.gov (United States)

Petersen, John; Scolfaro, Luisa; Myers, Thomas

2012-10-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

Efficiency simulations of thin film chalcogenide photovoltaic cells for different indoor lighting conditions

International Nuclear Information System (INIS)

Minnaert, B.; Veelaert, P.

2011-01-01

Photovoltaic (PV) energy is an efficient natural energy source for outdoor applications. However, for indoor applications, the efficiency of PV cells is much lower. Typically, the light intensity under artificial lighting conditions is less than 10 W/m 2 as compared to 100-1000 W/m 2 under outdoor conditions. Moreover, the spectrum is different from the outdoor solar spectrum. In this context, the question arises whether thin film chalcogenide photovoltaic cells are suitable for indoor use. This paper contributes to answering that question by comparing the power output of different thin film chalcogenide solar cells with the classical crystalline silicon cell as reference. The comparisons are done by efficiency simulation based on the quantum efficiencies of the solar cells and the light spectra of typical artificial light sources i.e. an LED lamp, a 'warm' and a 'cool' fluorescent tube and a common incandescent and halogen lamp, which are compared to the outdoor AM 1.5 spectrum as reference.

A volumetric meter chip for point-of-care quantitative detection of bovine catalase for food safety control

International Nuclear Information System (INIS)

Cui, Xingye; Hu, Jie; Choi, Jane Ru; Huang, Yalin; Wang, Xuemin; Lu, Tian Jian; Xu, Feng

2016-01-01

A volumetric meter chip was developed for quantitative point-of-care (POC) analysis of bovine catalase, a bioindicator of bovine mastitis, in milk samples. The meter chip displays multiplexed quantitative results by presenting the distance of ink bar advancement that is detectable by the naked eye. The meter chip comprises a poly(methyl methacrylate) (PMMA) layer, a double-sided adhesive (DSA) layer and a glass slide layer fabricated by the laser-etching method, which is typically simple, rapid (∼3 min per chip), and cost effective (∼$0.2 per chip). Specially designed “U shape” reaction cells are covered by an adhesive tape that serves as an on-off switch, enabling the simple operation of the assay. As a proof of concept, we employed the developed meter chip for the quantification of bovine catalase in raw milk samples to detect catalase concentrations as low as 20 μg/mL. The meter chip has great potential to detect various target analytes for a wide range of POC applications. - Highlights: • The meter chip is a standalone point-of-care diagnostic tool with visible readouts of quantification results. • A fast and low cost fabrication protocol (~3 min and ~$0.2 per chip) of meter chip was proposed. • The chip may hold the potential for rapid scaning of bovine mastitis in cattle farms for food safety control.

A volumetric meter chip for point-of-care quantitative detection of bovine catalase for food safety control

Energy Technology Data Exchange (ETDEWEB)

Cui, Xingye; Hu, Jie; Choi, Jane Ru; Huang, Yalin; Wang, Xuemin [The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi' an Jiaotong University, Xi' an, 710049 (China); Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an, 710049 (China); Lu, Tian Jian, E-mail: tjlu@mail.xjtu.edu.cn [Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an, 710049 (China); Xu, Feng, E-mail: fengxu@mail.xjtu.edu.cn [The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi' an Jiaotong University, Xi' an, 710049 (China); Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an, 710049 (China)

2016-09-07

A volumetric meter chip was developed for quantitative point-of-care (POC) analysis of bovine catalase, a bioindicator of bovine mastitis, in milk samples. The meter chip displays multiplexed quantitative results by presenting the distance of ink bar advancement that is detectable by the naked eye. The meter chip comprises a poly(methyl methacrylate) (PMMA) layer, a double-sided adhesive (DSA) layer and a glass slide layer fabricated by the laser-etching method, which is typically simple, rapid (∼3 min per chip), and cost effective (∼$0.2 per chip). Specially designed “U shape” reaction cells are covered by an adhesive tape that serves as an on-off switch, enabling the simple operation of the assay. As a proof of concept, we employed the developed meter chip for the quantification of bovine catalase in raw milk samples to detect catalase concentrations as low as 20 μg/mL. The meter chip has great potential to detect various target analytes for a wide range of POC applications. - Highlights: • The meter chip is a standalone point-of-care diagnostic tool with visible readouts of quantification results. • A fast and low cost fabrication protocol (~3 min and ~$0.2 per chip) of meter chip was proposed. • The chip may hold the potential for rapid scaning of bovine mastitis in cattle farms for food safety control.

Investigations on the parent compounds of Fe-chalcogenide superconductors

International Nuclear Information System (INIS)

Koz, Cevriye

2015-01-01

This work is focused on the parent compounds of the Fe-chalcogenide superconductors. For this purpose poly- and single-crystalline forms of tetragonal β-Fe x Se, Fe 1+y Te, Fe 1+y Te 1-x Se x and Fe (1+y)-x M x Te (M = Ni, Co) have been prepared. Second focal points of this study are the low-temperature structural phase transitions and physical property changes in tetragonal Fe 1+y Te which are induced by composition, external pressure, and cationic substitution.

Ionic-to-Electronic Conductivity Crossover in CdTe-AgI-As2Te3 Glasses: An 110mAg Tracer Diffusion Study.

Science.gov (United States)

Kassem, M; Alekseev, I; Bokova, M; Le Coq, D; Bychkov, E

2018-04-12

Conductivity isotherms of (CdTe) x (AgI) 0.5- x/2 (As 2 Te 3 ) 0.5- x/2 glasses (0.0 ≤ x ≤ 0.15) reveal a nonmonotonic behavior with increasing CdTe content reminiscent of mixed cation effect in oxide and chalcogenide glasses. Nevertheless, the apparent similarity appears to be partly incorrect. Using 110m Ag tracer diffusion measurements, we show that semiconducting CdTe additions produce a dual effect: (i) decreasing the Ag + ion transport by a factor of ≈200 with a simultaneous increase of the diffusion activation energy and (ii) increasing the electronic conductivity by 1.5 orders of magnitude. Consequently, the conductivity minimum at x = 0.05 reflects an ionic-to-electronic transport crossover; the silver-ion transport number decreases by 3 orders of magnitude with increasing x.

A micro surface tension pump (MISPU) in a glass microchip.

Science.gov (United States)

Peng, Xing Yue Larry

2011-01-07

A non-membrane micro surface tension pump (MISPU) was fabricated on a glass microchip by one-step glass etching. It needs no material other than glass and is driven by digital gas pressure. The MISPU can be seen working like a piston pump inside the glass microchip under a microscope. The design of the valves (MISVA) and pistons (MISTON) was based on the surface tension theory of the micro surface tension alveolus (MISTA). The digital gas pressure controls the moving gas-liquid interface to open or close the input and output MISVAs to refill or drive the MISTON for pumping a liquid. Without any moving parts, a MISPU is a kind of long-lasting micro pump for micro chips that does not lose its water pumping efficiency over a 20-day period. The volumetric pump output varied from 0 to 10 nl s(-1) when the pump cycle time decreased from 5 min to 15 s. The pump head pressure was 1 kPa.

An electrochemical pumping system for on-chip gradient generation.

Science.gov (United States)

Xie, Jun; Miao, Yunan; Shih, Jason; He, Qing; Liu, Jun; Tai, Yu-Chong; Lee, Terry D

2004-07-01

Within the context of microfluidic systems, it has been difficult to devise pumping systems that can deliver adequate flow rates at high pressure for applications such as HPLC. An on-chip electrochemical pumping system based on electrolysis that offers certain advantages over designs that utilize electroosmotic driven flow has been fabricated and tested. The pump was fabricated on both silicon and glass substrates using photolithography. The electrolysis electrodes were formed from either platinum or gold, and SU8, an epoxy-based photoresist, was used to form the pump chambers. A glass cover plate and a poly(dimethylsiloxane) (PDMS) gasket were used to seal the chambers. Filling of the chambers was accomplished by using a syringe to inject liquid via filling ports, which were later sealed using a glass cover plate. The current supplied to the electrodes controlled the rate of gas formation and, thus, the resulting fluid flow rate. At low backpressures, flow rates >1 microL/min have been demonstrated using polymer electrospray nozzle, we have confirmed the successful generation of a solvent gradient via a mass spectrometer.

Kissinger method applied to the crystallization of glass-forming liquids: Regimes revealed by ultra-fast-heating calorimetry

Energy Technology Data Exchange (ETDEWEB)

Orava, J., E-mail: jo316@cam.ac.uk [Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Greer, A.L., E-mail: alg13@cam.ac.uk [Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2015-03-10

Highlights: • Study of ultra-fast DSC applied to the crystallization of glass-forming liquids. • Numerical modeling of DSC traces at heating rates exceeding 10 orders of magnitude. • Identification of three regimes in Kissinger plots. • Elucidation of the effect of liquid fragility on the Kissinger method. • Modeling to study the regime in which crystal growth is thermodynamically limited. - Abstract: Numerical simulation of DSC traces is used to study the validity and limitations of the Kissinger method for determining the temperature dependence of the crystal-growth rate on continuous heating of glasses from the glass transition to the melting temperature. A particular interest is to use the wide range of heating rates accessible with ultra-fast DSC to study systems such as the chalcogenide Ge{sub 2}Sb{sub 2}Te{sub 5} for which fast crystallization is of practical interest in phase-change memory. Kissinger plots are found to show three regimes: (i) at low heating rates the plot is straight, (ii) at medium heating rates the plot is curved as expected from the liquid fragility, and (iii) at the highest heating rates the crystallization rate is thermodynamically limited, and the plot has curvature of the opposite sign. The relative importance of these regimes is identified for different glass-forming systems, considered in terms of the liquid fragility and the reduced glass-transition temperature. The extraction of quantitative information on fundamental crystallization kinetics from Kissinger plots is discussed.

Kissinger method applied to the crystallization of glass-forming liquids: Regimes revealed by ultra-fast-heating calorimetry

International Nuclear Information System (INIS)

Orava, J.; Greer, A.L.

2015-01-01

Highlights: • Study of ultra-fast DSC applied to the crystallization of glass-forming liquids. • Numerical modeling of DSC traces at heating rates exceeding 10 orders of magnitude. • Identification of three regimes in Kissinger plots. • Elucidation of the effect of liquid fragility on the Kissinger method. • Modeling to study the regime in which crystal growth is thermodynamically limited. - Abstract: Numerical simulation of DSC traces is used to study the validity and limitations of the Kissinger method for determining the temperature dependence of the crystal-growth rate on continuous heating of glasses from the glass transition to the melting temperature. A particular interest is to use the wide range of heating rates accessible with ultra-fast DSC to study systems such as the chalcogenide Ge 2 Sb 2 Te 5 for which fast crystallization is of practical interest in phase-change memory. Kissinger plots are found to show three regimes: (i) at low heating rates the plot is straight, (ii) at medium heating rates the plot is curved as expected from the liquid fragility, and (iii) at the highest heating rates the crystallization rate is thermodynamically limited, and the plot has curvature of the opposite sign. The relative importance of these regimes is identified for different glass-forming systems, considered in terms of the liquid fragility and the reduced glass-transition temperature. The extraction of quantitative information on fundamental crystallization kinetics from Kissinger plots is discussed

Multi-layered Chalcogenides with potential for magnetism and superconductivity

Energy Technology Data Exchange (ETDEWEB)

Li, Li, E-mail: lil2@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Parker, David S. [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Cruz, Clarina R. dela [Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Sefat, Athena S., E-mail: sefata@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2016-12-15

Highlights: • A comprehensive study on multi-layered thallium copper chalcogenides TlCu{sub 2n}Ch{sub n+1}. • All the TlCu{sub 2n}Ch{sub n+1} exhibit metallic behaviors with no long-range magnetism. • Calculations suggest a lack of Fermi-level spectral weight for magnetic instability. • Our results suggest a likelihood of magnetism for multiple structural layers with Fe. - Abstract: Layered thallium copper chalcogenides can form single, double, or triple layers of Cu–Ch separated by Tl sheets. Here we report on the preparation and properties of Tl-based materials of TlCu{sub 2}Se{sub 2}, TlCu{sub 4}S{sub 3}, TlCu{sub 4}Se{sub 3} and TlCu{sub 6}S{sub 4}. Having no long-range magnetism for these materials is quite surprising considering the possibilities of inter- and intra-layer exchange interactions through Cu 3d, and we measure by magnetic susceptibility and confirm by neutron diffraction. First principles density-functional theory calculations for both the single-layer TlCu{sub 2}Se{sub 2} (isostructural to the ‘122’ iron-based superconductors) and the double-layer TlCu{sub 4}Se{sub 3} suggest a lack of Fermi-level spectral weight that is needed to drive a magnetic or superconducting instability. However, for multiple structural layers with Fe, there is much greater likelihood for magnetism and superconductivity.

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yubo; Zhang, Wenqing, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Youwei; Zhang, Jiawei; Xi, Lili [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Peihong, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260 (United States)

2016-05-21

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

Engineering of refractive index in sulfide chalcogenide glass by direct laser writing

KAUST Repository

Zhang, Yaping

2010-01-01

Arsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.

Thermally-induced crystallization behaviour of 80GeSe2–20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy

International Nuclear Information System (INIS)

Shpotyuk, O.; Calvez, L.; Petracovschi, E.; Klym, H.; Ingram, A.; Demchenko, P.

2014-01-01

Highlights: • Chalcogenide Ge–Ga–Se glasses were annealed at 380 °C for 10, 25 and 50 h. • Crystallization of glasses during annealing indicates formation of crystals. • Structural changes are described by two-state positron trapping model. • Modification leading to nucleation and fragmentation of free volume of glasses. • The Ge–Ga–Se systems cannot be classified as typical pseudo-binary system. -- Abstract: Crystallization behaviour of 80GeSe 2 –20Ga 2 Se 3 glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section

Magnetic and electronic properties of Neptunium chalcogenides from GGA + U + SOC and DFT investigations

Energy Technology Data Exchange (ETDEWEB)

Khan, Wilayat [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: sosaid@alfaisal.edu [College of Science, Physics Department, Alfaisal University, Riyadh 11533 (Saudi Arabia)

2017-06-15

Highlights: • Electronic and magnetic properties of Neptunium chalcogenides were explored theoretically using DFT approach. • Spin orbit coupling and GGA + U approach described successfully the f–f coupling. • Np{sub 2}X{sub 5} ate metallic with high magnetic character due to the Neptunium. • Fermi surfaces of Np{sub 2}Te{sub 5} have shown a greater electrical conductivity compared to Np{sub 2}Se{sub 5} and Np{sub 2}S{sub 5}. - Abstract: First-principles calculations techniques were employed to explore the structural, electronic and magnetic properties of Neptunium chalcogenides (Np{sub 2}X{sub 5}, X = S, Se and Te). No experimental or theoretical studies of their physical properties have been previously reported in the literature. The presence of highly localized f states has requested the employment of the spin orbit coupling and GGA + U approach in order to describe correctly the f–f coupling. Np{sub 2}X{sub 5} was found metallic with high magnetic character due to the Neptunium presence. Fermi surfaces of Np{sub 2}Te{sub 5} have shown a greater electrical conductivity compared to Np{sub 2}Se{sub 5} and Np{sub 2}S{sub 5}. The magnetic moment was found to be between 13.24 and 13.92μ{sub B}, principally induced by Np f and d-orbitals as well as the spin-polarization of the chalcogenes (Te, Se, S) induced by Np. Neptunium chalcogenides have shown interesting magnetic properties and should be manipulated with precaution due to their radioactive properties.

CsPbBr3:xEu3+ perovskite QD borosilicate glass: a new member of the luminescent material family.

Science.gov (United States)

Yuan, Rongrong; Shen, Lingli; Shen, Chenyang; Liu, Jianming; Zhou, Lei; Xiang, Weidong; Liang, Xiaojuan

2018-03-29

Eu3+ ions were introduced into the lattices of CsPbBr3 perovskite QDs and a tunable multicolour emission from CsPbBr3:xEu3+ perovskite QD glass was successfully obtained. Multicolour LEDs that were fabricated by combining the as-prepared CsPbBr3:xEu3+ QD glasses with a UV chip were also researched in this study.

Novel High Temperature and Radiation Resistant Infrared Glasses and Optical Fibers for Sensing in Advanced Small Modular Reactors

Energy Technology Data Exchange (ETDEWEB)

Ballato, John [Clemson Univ., SC (United States)

2018-01-22

One binary and three series of ternary non-oxide pure sulfide glasses compositions were investigated with the goal of synthesizing new glasses that exhibit high glass transition (Tg) and crystallization (Tc) temperatures, infrared transparency, and reliable glass formability. The binary glass series consisted of Ges₂ and La₂S₃ and the three glass series in the x(nBaS + mLa2S3) + (1-2x)GeS2 ternary system have BaS:La2S3 modifier ratios of 1:1, 1:2, and 2:1 with . With these glasses, new insights were realized as to how ionic glasses form and how glass modifiers affect both structure and glass formability. All synthesized compositions were characterized by Infrared (IR) and Raman spectroscopies and differential thermal analysis (DTA) to better understand the fundamental structure, optical, and thermal characteristics of the glasses. After a range of these glasses were synthesized, optimal compositions were formed into glass disks and subjected to gamma irradiation. Glass disks were characterized both before and after irradiation by microscope imaging, measuring the refractive index, density, and UV-VIS-IR transmission spectra. The final total dose the samples were subjected to was ~2.5 MGy. Ternary samples showed a less than 0.4% change in density and refractive index and minimal change in transmission window. The glasses also resisted cracking as seen in microscope images. Overall, many glass compositions were developed that possess operating temperatures above 500 °C, where conventional chalcogenide glasses such as As2S3 and have T_gs from ~200-300 °C, and these glasses have a greater than Tc – Tg values larger than 100 °C and this shows that these glasses have good thermal stability of Tg such that they can be fabricated into optical fibers and as such can be considered candidates for high temperature infrared fiber optics. Initial fiber fabrication efforts showed that selected glasses could be drawn but larger

Transport properties of microwave sintered pure and glass added MgCuZn ferrites

Energy Technology Data Exchange (ETDEWEB)

Madhuri, W., E-mail: madhuriw12@gmail.com [School of Advanced Sciences, VIT University, Vellore 632 014 (India); Penchal Reddy, M.; Kim, Il Gon [Department of Physics, Changwon National University, Changwon 641 773 (Korea, Republic of); Rama Manohar Reddy, N. [Department of Materials Science and Nanotechnology, Yogi Vemana University, Kadapa 516 227 (India); Siva Kumar, K.V. [Ceramic Composites Materials Laboratory, Sri Krishnadevaraya University, Anantapur 515 055 (India); Murthy, V.R.K. [Microwave Laboratory, IIT Madras, Chennai 600 036 (India)

2013-07-01

Highlights: • MgCuZn ferrite was successfully prepared by novel microwave sintering (MS) method. • The sintering temperature was notably reduced from 1150 °C to 950 °C for MS. • Temperature dependence of DC conductivity and AC conductivity are studied. • 1 wt% PBS glass added MS MgCuZn ferrite samples are suitable for core materials in multilayer chip inductors (MLCI). -- Abstract: A series of pure stoichiometric and 1 wt% lead borosilicate (PBS) glass added MgCuZn ferrite with the general formula Mg{sub 0.5}Cu{sub x}Zn{sub 0.5−x}Fe{sub 2}O{sub 4} with x = 0.05, 0.1, 0.15, 0.2, 0.25 and 0.3 were synthesized by microwave sintering technique. Single phase spinel structure is exhibited by the XRD patterns of these ferrites. DC and AC conductivity were investigated as a function of composition, temperature and frequency. DC conductivities were also estimated using the impedance spectroscopy analysis of Cole–Cole plots. The DC conductivities thus obtained are in good agreement with the experimental results. All the investigated samples exhibited two regions of conductivity one in the low temperature and the second in the high temperature region. It is observed that PBS glass added samples have lower conductivities than pure samples. Due to their lower conductivities and sintering temperatures the 1 wt% PBS glass added samples are suitable for multilayer chip inductor (MLCI) and high definition TV deflection yoke material application.

A Self-Templating Scheme for the Synthesis of Nanostructured Transition Metal Chalcogenide Electrodes for Capacitive Energy Storage

KAUST Repository

Xia, Chuan

2015-06-11

Due to their unique structural features including well-defined interior voids, low density, low coefficients of thermal expansion, large surface area and surface permeability, hollow micro/nanostructured transition metal sulfides with high conductivity have been investigated as new class of electrode materials for pseudocapacitor applications. Herein, we report a novel self-templating strategy to fabricate well-defined single and double-shell NiCo2S4 hollow spheres, as a promising electrode material for pseudocapacitors. The surfaces of the NiCo2S4 hollow spheres consist of self-assembled 2D mesoporous nanosheets. This unique morphology results in a high specific capacitance (1257 F g-1 at 2 A g-1), remarkable rate performance (76.4% retention of initial capacitance from 2 A g-1 to 60 A g-1) and exceptional reversibility with a cycling efficiency of 93.8% and 87% after 10,000 and 20,000 cycles, respectively, at a high current density of 10 A g-1. The cycling stability of our ternary chalcogenides is comparable to carbonaceous electrode materials, but with much higher specific capacitance (higher than any previously reported ternary chalcogenide), suggesting that these unique chalcogenide structures have potential application in next-generation commercial pseudocapacitors.

The effect of oxygen impurity on the electronic and optical properties of calcium, strontium and barium chalcogenide compounds

International Nuclear Information System (INIS)

Dadsetani, M.; Beiranvand, R.

2010-01-01

Electronic and optical properties of calcium, strontium and barium chalcogenide compounds in NaCl structure are studied using the band structure results obtained through the full potential linearized augmented palne wave method. Different linear relationships are observed between theoretical band gap and 1/a 2 (where a is lattice constant) for calcium, strontium and barium chalcogenide compounds with and without oxygen, respectively. An abnormal behavior of electronic and optical properties are found for compounds containing oxygen. These effects are ascribed to the special properties of Ca-O, Sr-O and Ba-O bonds, which are different from chemical bonds between Ca, Sr and Ba and other chalcogen atoms.

Silicon Chip-to-Chip Mode-Division Multiplexing

DEFF Research Database (Denmark)

Baumann, Jan Markus; Porto da Silva, Edson; Ding, Yunhong

2018-01-01

A chip-to-chip mode-division multiplexing connection is demonstrated using a pair of multiplexers/demultiplexers fabricated on the silicon-on-insulator platform. Successful mode multiplexing and demultiplexing is experimentally demonstrated, using the LP01, LP11a and LP11b modes.......A chip-to-chip mode-division multiplexing connection is demonstrated using a pair of multiplexers/demultiplexers fabricated on the silicon-on-insulator platform. Successful mode multiplexing and demultiplexing is experimentally demonstrated, using the LP01, LP11a and LP11b modes....

Electrokinetic label-free screening chip: a marriage of multiplexing and high throughput analysis using surface plasmon resonance imaging

NARCIS (Netherlands)

Krishnamoorthy, G.; Carlen, Edwin; Bomer, Johan G.; Wijnperle, Daniël; de Boer, Hans L.; van den Berg, Albert; Schasfoort, Richardus B.M.

2010-01-01

We present an electrokinetic label-free biomolecular screening chip (Glass/PDMS) to screen up to 10 samples simultaneously using surface plasmon resonance imaging (iSPR). This approach reduces the duration of an experiment when compared to conventional experimental methods. This new device offers a

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

Science.gov (United States)

Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

2016-05-11

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

Preliminary study on rotary ultrasonic machining of Bk-7 optical glass rod

International Nuclear Information System (INIS)

Hamzah, E.; Izman, S.; Khoo, C.Y.; Zainal Abidin, N.N.

2007-01-01

This paper presents an experimental observation on rotary ultrasonic machining (RUM) of BK7 optical glass rod. BK7 is a common technical optical glass for high quality optical components due to its high linear optical transmission in the visible range and is chemically stable. RUM is a hybrid machining process that combines the material removal mechanisms of diamond grinding and ultrasonic machining (USM) and it is non-thermal, non-chemical, creates no change in the microstructure, chemical or physical properties of the work piece. In the RUM, a controlled static load is applied to the rotating core drill with metal bonded diamond abrasive and is ultrasonically vibrated in the axial direction. A water-soluble coolant was used to cool the tool and sample during machining processes. By using DOE (Design of Experiment) approach, the effect of spindle speed and feed rate to the ultrasonic machinability had been developed. The main effects and two-factor interactions of process parameters (spindle speed) and feed rate) on output variables (MRR, surface roughness, opaqueness, chipping thickness and chipping size) are studied. (author)

Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Schindler, J L; Hogan, T P; Brazis, P W; Kannewurf, C R; Chung, D Y; Kanatzidis, M G

1997-07-01

New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi{sub 4}Te{sub 6} have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of {approx}+110 {micro}V/K at room temperature. A second compound, {beta}-K{sub 2}Bi{sub 8}Se{sub 13} shows lower conductivity {approx}240 S/cm, but a larger n-type thermopower {approx}{minus}200 {micro}V/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi{sub 2}Te{sub 3}. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi{sub 4}Te{sub 6} reaches ZT {approx} 0.32 at 260 K and for {beta}-K{sub 2}Bi{sub 8}Se{sub 13} ZT {approx} 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Atomic- and void-species nanostructures in chalcogenide glasses modified by high-energy γ-irradiation

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2007-01-01

Atomic- and void-species nanostructures are studied in As 2 S 3 glass in unmodified and γ-modified states using a combination of conventional X-ray diffraction with respect to the first sharp diffraction peak, synchrotron-based high-energy X-ray diffraction and extended X-ray absorption fine structure spectroscopy. The experimental data are analyzed taking into account radiation-induced changes in the parameters of the first sharp diffraction peak (position, full width at half maximum, intensity), packing factor, structural disordering, atomic and void topology, coordination number and mean square deviation in bond length. The origin of the structural modification effect induced by γ-irradiation is explained in terms of coordination topological defects model. (authors)

Google Glass-Directed Monitoring and Control of Microfluidic Biosensors and Actuators

Science.gov (United States)

Zhang, Yu Shrike; Busignani, Fabio; Ribas, João; Aleman, Julio; Rodrigues, Talles Nascimento; Shaegh, Seyed Ali Mousavi; Massa, Solange; Rossi, Camilla Baj; Taurino, Irene; Shin, Su-Ryon; Calzone, Giovanni; Amaratunga, Givan Mark; Chambers, Douglas Leon; Jabari, Saman; Niu, Yuxi; Manoharan, Vijayan; Dokmeci, Mehmet Remzi; Carrara, Sandro; Demarchi, Danilo; Khademhosseini, Ali

2016-03-01

Google Glass is a recently designed wearable device capable of displaying information in a smartphone-like hands-free format by wireless communication. The Glass also provides convenient control over remote devices, primarily enabled by voice recognition commands. These unique features of the Google Glass make it useful for medical and biomedical applications where hands-free experiences are strongly preferred. Here, we report for the first time, an integral set of hardware, firmware, software, and Glassware that enabled wireless transmission of sensor data onto the Google Glass for on-demand data visualization and real-time analysis. Additionally, the platform allowed the user to control outputs entered through the Glass, therefore achieving bi-directional Glass-device interfacing. Using this versatile platform, we demonstrated its capability in monitoring physical and physiological parameters such as temperature, pH, and morphology of liver- and heart-on-chips. Furthermore, we showed the capability to remotely introduce pharmaceutical compounds into a microfluidic human primary liver bioreactor at desired time points while monitoring their effects through the Glass. We believe that such an innovative platform, along with its concept, has set up a premise in wearable monitoring and controlling technology for a wide variety of applications in biomedicine.

Google Glass-Directed Monitoring and Control of Microfluidic Biosensors and Actuators

Science.gov (United States)

Zhang, Yu Shrike; Busignani, Fabio; Ribas, João; Aleman, Julio; Rodrigues, Talles Nascimento; Shaegh, Seyed Ali Mousavi; Massa, Solange; Rossi, Camilla Baj; Taurino, Irene; Shin, Su-Ryon; Calzone, Giovanni; Amaratunga, Givan Mark; Chambers, Douglas Leon; Jabari, Saman; Niu, Yuxi; Manoharan, Vijayan; Dokmeci, Mehmet Remzi; Carrara, Sandro; Demarchi, Danilo; Khademhosseini, Ali

2016-01-01

Google Glass is a recently designed wearable device capable of displaying information in a smartphone-like hands-free format by wireless communication. The Glass also provides convenient control over remote devices, primarily enabled by voice recognition commands. These unique features of the Google Glass make it useful for medical and biomedical applications where hands-free experiences are strongly preferred. Here, we report for the first time, an integral set of hardware, firmware, software, and Glassware that enabled wireless transmission of sensor data onto the Google Glass for on-demand data visualization and real-time analysis. Additionally, the platform allowed the user to control outputs entered through the Glass, therefore achieving bi-directional Glass-device interfacing. Using this versatile platform, we demonstrated its capability in monitoring physical and physiological parameters such as temperature, pH, and morphology of liver- and heart-on-chips. Furthermore, we showed the capability to remotely introduce pharmaceutical compounds into a microfluidic human primary liver bioreactor at desired time points while monitoring their effects through the Glass. We believe that such an innovative platform, along with its concept, has set up a premise in wearable monitoring and controlling technology for a wide variety of applications in biomedicine. PMID:26928456

Structural phase transition and elastic properties of mercury chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Shriya, S. [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria)

2012-08-15

Pressure induced structural transition and elastic properties of ZnS-type (B3) to NaCl-type (B1) structure in mercury chalcogenides (HgX; X = S, Se and Te) are presented. An effective interionic interaction potential (EIOP) with long-range Coulomb, as well charge transfer interactions, Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbor ions and van der Waals interactions are considered. Emphasis is on the evaluation of the pressure dependent Poisson's ratio {nu}, the ratio R{sub BT/G} of B (bulk modulus) over G (shear modulus), anisotropy parameter, Shear and Young's modulus, Lame constant, Kleinman parameter, elastic wave velocity and thermodynamical property as Debye temperature. The Poisson's ratio behavior infers that Mercury chalcogenides are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations. Highlights: Black-Right-Pointing-Pointer Vast volume discontinuity in phase diagram infers transition from ZnS to NaCl structure. Black-Right-Pointing-Pointer The shear elastic constant C{sub 44} is nonzero confirms the mechanical stability. Black-Right-Pointing-Pointer Pressure dependence of {theta}{sub D} infers the softening of lattice with increasing pressure. Black-Right-Pointing-Pointer Estimated bulk, shear and tetragonal moduli satisfied elastic stability criteria. Black-Right-Pointing-Pointer In both B3 and B1 phases, C{sub 11} and C{sub 12} increase linearly with pressure.

A Novel Effect of CO2 Laser Induced Piezoelectricity in Ag2Ga2SiS6 Chalcogenide Crystals

Directory of Open Access Journals (Sweden)

Oleg V. Parasyuk

2016-08-01

Full Text Available We have discovered a substantial enhancement of the piezoelectric coefficients (from 10 to 78 pm/V in the chalcogenide Ag2Ga2SiS6 single crystals. The piezoelectric studies were done under the influence of a CO2 laser (wavelength 10.6 μm, time duration 200 ns, lasers with power densities varying up to 700 MW/cm2. Contrary to the earlier studies where the photoinduced piezoelectricity was done under the influence of the near IR lasers, the effect is higher by at least one order, which is a consequence of the phonon anharmonic contributions and photopolarizations. Such a discovery allows one to build infrared piezotronic devices, which may be used for the production of the IR laser tunable optoelectronic triggers and memories. This is additionally confirmed by the fact that analogous photoillumination by the near IR laser (Nd:YAG (1064 nm and Er:glass laser (1540 nm gives the obtained values of the effective piezoelectricity at of least one order less. The effect is completely reversible with a relaxation time up to several milliseconds. In order to clarify the role of free carriers, additional studies of photoelectrical spectra were done.

Cell Monitoring and Manipulation Systems (CMMSs based on Glass Cell-Culture Chips (GC3s

Directory of Open Access Journals (Sweden)

Sebastian M. Buehler

2016-06-01

Full Text Available We developed different types of glass cell-culture chips (GC3s for culturing cells for microscopic observation in open media-containing troughs or in microfluidic structures. Platinum sensor and manipulation structures were used to monitor physiological parameters and to allocate and permeabilize cells. Electro-thermal micro pumps distributed chemical compounds in the microfluidic systems. The integrated temperature sensors showed a linear, Pt1000-like behavior. Cell adhesion and proliferation were monitored using interdigitated electrode structures (IDESs. The cell-doubling times of primary murine embryonic neuronal cells (PNCs were determined based on the IDES capacitance-peak shifts. The electrical activity of PNC networks was detected using multi-electrode arrays (MEAs. During seeding, the cells were dielectrophoretically allocated to individual MEAs to improve network structures. MEA pads with diameters of 15, 20, 25, and 35 µm were tested. After 3 weeks, the magnitudes of the determined action potentials were highest for pads of 25 µm in diameter and did not differ when the inter-pad distances were 100 or 170 µm. Using 25-µm diameter circular oxygen electrodes, the signal currents in the cell-culture media were found to range from approximately −0.08 nA (0% O2 to −2.35 nA (21% O2. It was observed that 60-nm thick silicon nitride-sensor layers were stable potentiometric pH sensors under cell-culture conditions for periods of days. Their sensitivity between pH 5 and 9 was as high as 45 mV per pH step. We concluded that sensorized GC3s are potential animal replacement systems for purposes such as toxicity pre-screening. For example, the effect of mefloquine, a medication used to treat malaria, on the electrical activity of neuronal cells was determined in this study using a GC3 system.

A One-Square-Millimeter Compact Hollow Structure for Microfluidic Pumping on an All-Glass Chip

Directory of Open Access Journals (Sweden)

Xing Yue (Larry Peng

2016-04-01

Full Text Available A micro surface tension pump is a new type of low-cost, built-in, all-glass, microfluidic pump on a glass microchip fabricated by one-step glass etching. However, geometric minimization and optimization for practical use are challenging. Here, we report a one-square-millimeter, built-in, all-glass pump controlled by two-way digital gas pressure. The pump consists simply of two joint chambers and a piston between two gas control channels. It does not require pre-perfusion for initialization, and can immediately begin to run when a liquid enters its inlet channel. It is also more reliable than conventional micro pumps for practical use due to its ability to restart after the formation of a blocking bubble, which can serve as a valuable troubleshooting procedure. Its volumetric pump output was 0.5–0.7 nL·s−1 under a pump head pressure of 300 Pa.

Thermally-induced crystallization behaviour of 80GeSe{sub 2}–20Ga{sub 2}Se{sub 3} glass as probed by combined X-ray diffraction and PAL spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Scientific Research Company “Carat”, 202, Stryjska str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa 42201 (Poland); Calvez, L.; Petracovschi, E. [Equipe Verres et Céramiques, UMR-CNRS 6226, Institute des Sciences chimiques de Rennes, Université de Rennes 1, 35042 Rennes Cedex (France); Klym, H. [Lviv polytechnic National University, 12 Bandera str., Lviv 79013 (Ukraine); Ingram, A. [Physics Faculty of Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland); Demchenko, P. [Ivan Franko National University of Lviv, 6, Kyryla and Mefodiya Str., Lviv 79005 (Ukraine)

2014-01-05

Highlights: • Chalcogenide Ge–Ga–Se glasses were annealed at 380 °C for 10, 25 and 50 h. • Crystallization of glasses during annealing indicates formation of crystals. • Structural changes are described by two-state positron trapping model. • Modification leading to nucleation and fragmentation of free volume of glasses. • The Ge–Ga–Se systems cannot be classified as typical pseudo-binary system. -- Abstract: Crystallization behaviour of 80GeSe{sub 2}–20Ga{sub 2}Se{sub 3} glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section.

Electrochemical kinetics and X-ray absorption spectroscopy investigations of select chalcogenide electrocatalysts for oxygen reduction reaction applications

International Nuclear Information System (INIS)

Ziegelbauer, Joseph M.; Murthi, Vivek S.; O'Laoire, Cormac; Gulla, Andrea F.; Mukerjee, Sanjeev

2008-01-01

Transition metal-based chalcogenide electrocatalysts exhibit a promising level of performance for oxygen reduction reaction applications while offering significant economic benefits over the state of the art Pt/C systems. The most active materials are based on Ru x Se y clusters, but the toxicity of selenium will most likely limit their embrace by the marketplace. Sulfur-based analogues do not suffer from toxicity issues, but suffer from substantially less activity and stability than their selenium brethren. The structure/property relationships that result in these properties are not understood due to ambiguities regarding the specific morphologies of Ru x S y -based chalcogenides. To clarify these properties, an electrochemical kinetics study was interpreted in light of extensive X-ray diffraction, scanning electron microscopy, and in situ X-ray absorption spectroscopy evaluations. The performance characteristics of ternary M x Ru y S z /C (M = Mo, Rh, or Re) chalcogenide electrocatalysts synthesized by the now-standard low-temperature nonaqueous (NA) route are compared to commercially available (De Nora) Rh- and Ru-based systems. Interpretation of performance differences is made in regards to bulk and surface properties of these systems. In particular, the overall trends of the measured activation energies in respect to increasing overpotential and the gross energy values can be explained in regards to these differences

An Electrochromatography Chip with Integrated Waveguides for UV Absorbance Detection

DEFF Research Database (Denmark)

Gustafsson, Omar; Mogensen, Klaus Bo; Ohlsson, Pelle Daniel

2008-01-01

A silicon-based microchip for electrochromatographic separations is presented. Apart from a microfluidic network, the microchip has integrated UV-transparent waveguides for detection and integrated couplers for optical fibers on the chip, yielding the most complete chromatography microchip to date...... to the waveguides. The entire oxidized silicon microchip structure is sealed with a glass lid. Reversed phase electrochromatographic separation of three neutral compounds is demonstrated using UV absorbance detection at 254 nm. Baseline separation of the analytes is achieved in less than two minutes....

The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

International Nuclear Information System (INIS)

Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

2014-01-01

This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

Optical devices for biochemical sensing in flame hydrolysis deposited glass

Science.gov (United States)

Ruano-Lopez, Jesus M.

Previous research in the field of Flame Hydrolysis Deposition (FHD) of glasses has focused on the production of low cost optical devices for the field of telecommunications. The originality of this doctoral research resides in the exploration of this technology in the fabrication of optical bio-chemical sensors, with integrated "Lab-on-a-chip" devices. To achieve this goal, we have combined and applied different microfabrication processes for the manufacture of sensor platforms using FHD. These structures are unique in that they take advantage of the intrinsic benefits of the microfabrication process, such as, miniaturisation and mass production, and combine them with the properties of FHD glass, namely: low loss optical transducing mechanisms, planar technologies and monolithic integration. This thesis demonstrates that FHD is a suitable technology for biosensing and Lab- on-a-Chip applications. The objective is to provide future researchers with the necessary tools to accomplish an integrated analytical system based on FHD. We have designed, fabricated, and successfully tested a FHD miniaturised sensor, which comprised optical and microfluidic circuitry, in the framework of low volume fluorescence assays. For the first time, volumes as low as 570 pL were analysed with a Cyanine-5 fluorophore with a detection limit of 20 pM, or ca. 6000 molecules (+/-3sigma) for this platform. The fabrication of the sensor generated a compilation of processes that were then utilised to produce other possible optical platforms for bio-chemical sensors in FHD, e.g. arrays and microfluidics. The "catalogue" of methods used included new recipes for reactive ion etching, glass deposition and bonding techniques that enabled the development of the microfluidic circuitry, integrated with an optical circuitry. Furthermore, we developed techniques to implement new tasks such as optical signal treatment using integrated optical structures, planar arraying of sensors, a separating element for

Integration of micro-optics and microfluidics in a glass chip by fs-laser for optofluidic applications

Science.gov (United States)

Osellame, Roberto; Martinez, Rebeca; Laporta, Paolo; Ramponi, Roberta; Cerullo, Giulio

2009-02-01

A lab-on-a-chip (LOC) is a device that incorporates in a single substrate the functionalities of a biological laboratory, i.e. a network of fluidic channels, reservoirs, valves, pumps and sensors, all with micrometer dimensions. Its main advantages are the possibility of working with small samples quantities (from nano- to picoliters), high sensitivity, speed of analysis and the possibility of measurement automation and standardization. They are becoming the most powerful tools of analytical chemistry with a broad application in life sciences, biotechnology and drug development. The next technological challenge of LOCs is direct on-chip integration of photonic functionalities for sensing of biomolecules flowing in the microchannels. Ultrafast laser processing of the bulk of a dielectric material is a very flexible and simple method to produce photonic devices inside microfluidic chips for capillary electrophoresis (CE) or chemical microreactors. By taking advantage of the unique three-dimensional capabilities of this fabrication technique, more complex functionalities, such as splitters or Mach-Zehnder interferometers, can be implemented. In this work we report on the use of femtosecond laser pulses to fabricate photonic devices (as waveguides, splitters and interferometers) inside commercial CE chips, without affecting the manufacturing procedure of the microfluidic part of the device. The fabrication of single waveguides intersecting the channels allows one to perform absorption or Laser Induced Fluorescence (LIF) sensing of the molecules separated inside the microchannels. Waveguide splitters are used for multipoint excitation of the microfluidic channel for parallel or higher sensitivity measurements. Finally, Mach-Zehnder interferometers are used for label-free sensing of the samples flowing in the microfluidic channels by means of refractive index changes detection.

Trends in oxygen reduction and methanol activation on transition metal chalcogenides

DEFF Research Database (Denmark)

Tritsaris, Georgios; Nørskov, Jens Kehlet; Rossmeisl, Jan

2011-01-01

We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability...... of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated....

Angle-resolved photoemission spectroscopy on iron-chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Maletz, Janek; Zabolotnyy, Volodymyr; Evtushinsky, Daniil; Thirupathaiah, Setti; Wolter-Giraud, Anja; Harnagea, Luminita; Kordyuk, Alexander; Borisenko, Sergey [IFW Dresden (Germany); Yaresko, Alexander [MPI-FKF, Stuttgart (Germany); Vasiliev, Alexander [Moscow State University (Russian Federation); Chareev, Dimitri [RAS, Chernogolovka (Russian Federation); Rienks, Emile [Helmholtz-Zentrum Berlin (Germany); Buechner, Bernd [IFW Dresden (Germany); TU Dresden (Germany); Shermadini, Zurab; Luetkens, Hubertus; Sedlak, Kamil; Khasanov, Rustem; Amato, Alex; Krzton-Maziopa, Anna; Conder, Kazimierz; Pomjakushina, Ekaterina [Paul Scherrer Institute (Switzerland); Klauss, Hans-Henning [TU Dresden (Germany)

2014-07-01

The electronic structure of the iron chalcogenide superconductors FeSe{sub 1-x} and Rb{sub 0.77}Fe{sub 1.61}Se{sub 2} was investigated by high-resolution angle-resolved photoemission spectroscopy (ARPES). The results were compared to DFT calculations and μSR measurements. Both compounds share ''cigar-shaped'' Fermi surface sheets in their electronic structure, that can be found in almost all iron-pnictide superconductors. These features originate from a strong interplay of two hole- and electron-like bands in the Brillouin zone center, leading to a pronounced singularity in the density of states just below the Fermi level. This facilitates the coupling to a bosonic mode responsible for superconductivity.

FY 2006 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Bernacki, Bruce E.; Ho, Nicolas; Krishnaswami, Kannan; Qiao, Hong (Amy); Schultz, John F.

2006-12-28

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics and optical fiber processing methods for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

Synthesis and luminescence properties of glass ceramics containing MSiO3:Eu2+ (M=Ca, Sr, Ba) phosphors for white LED

International Nuclear Information System (INIS)

Cui Zhiguang; Jia Guohua; Deng Degang; Hua Youjie; Zhao Shilong; Huang Lihui; Wang Huanping; Ma Hongping; Xu Shiqing

2012-01-01

Eu 2+ doped silicate glasses were prepared of the system 52SiO 2 -48MO: xEu 2+ (in molar ratio, M=Ca, Sr, Ba; x=1, 3, 5, 7, 9) by a high temperature melt-quenching method in a reducing atmosphere. Glass ceramics containing MSiO 3 :Eu 2+ (M=Ca, Sr, Ba) nano-phosphors were obtained after the heat treatment of the glass samples. The excitation, emission spectra and lifetime decay curves of 4f 6 5d 1 →4f 7 of Eu 2+ were measured and interpreted with respect to their crystal structures and multi-site occupations of divalent europium in the hosts. Their excitation bands mainly extend from 450 to 250 nm, which is adaptable to the main emission region of the UV LED chip. With UV light excitation, the Eu 2+ emission in CaSiO 3 , SrSiO 3 and BaSiO 3 shows blue, green and yellow colors centered at 440, 505 and 555 nm, respectively. The critical Eu 2+ concentration was studied and determined to be x=5 for both CaSiO 3 and SrSiO 3 and x=7 for BaSiO 3 phosphors. The results show that the Eu 2+ doped glass ceramic phosphors containing MSiO 3 (M=Ca, Sr, Ba) nano-crystals can be used as potential matrix materials for a high power white LED pumped by the UV LED chip. - Highlights: → Glass ceramic containing MSiO 3 :Eu 2+ (M=Ca, Sr, Ba) phosphors prepared. → Derived phosphors emit intensively blue, green and yellow colors. → Their luminescence properties and crystal structures have been investigated. → Concentration quenching effects observed and analyzed. → Potential application for UV chip exciting white LED evaluated.

Automated, Ultra-Sterile Solid Sample Handling and Analysis on a Chip

Science.gov (United States)

Mora, Maria F.; Stockton, Amanda M.; Willis, Peter A.

2013-01-01

There are no existing ultra-sterile lab-on-a-chip systems that can accept solid samples and perform complete chemical analyses without human intervention. The proposed solution is to demonstrate completely automated lab-on-a-chip manipulation of powdered solid samples, followed by on-chip liquid extraction and chemical analysis. This technology utilizes a newly invented glass micro-device for solid manipulation, which mates with existing lab-on-a-chip instrumentation. Devices are fabricated in a Class 10 cleanroom at the JPL MicroDevices Lab, and are plasma-cleaned before and after assembly. Solid samples enter the device through a drilled hole in the top. Existing micro-pumping technology is used to transfer milligrams of powdered sample into an extraction chamber where it is mixed with liquids to extract organic material. Subsequent chemical analysis is performed using portable microchip capillary electrophoresis systems (CE). These instruments have been used for ultra-highly sensitive (parts-per-trillion, pptr) analysis of organic compounds including amines, amino acids, aldehydes, ketones, carboxylic acids, and thiols. Fully autonomous amino acid analyses in liquids were demonstrated; however, to date there have been no reports of completely automated analysis of solid samples on chip. This approach utilizes an existing portable instrument that houses optics, high-voltage power supplies, and solenoids for fully autonomous microfluidic sample processing and CE analysis with laser-induced fluorescence (LIF) detection. Furthermore, the entire system can be sterilized and placed in a cleanroom environment for analyzing samples returned from extraterrestrial targets, if desired. This is an entirely new capability never demonstrated before. The ability to manipulate solid samples, coupled with lab-on-a-chip analysis technology, will enable ultraclean and ultrasensitive end-to-end analysis of samples that is orders of magnitude more sensitive than the ppb goal given

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Fe-Cluster Compounds of Chalcogenides: Candidates for Rare-Earth-Free Permanent Magnet and Magnetic Nodal-Line Topological Material.

Science.gov (United States)

Zhao, Xin; Wang, Cai-Zhuang; Kim, Minsung; Ho, Kai-Ming

2017-12-04

Fe-cluster-based crystal structures are predicted for chalcogenides Fe 3 X 4 (X = S, Se, Te) using an adaptive genetic algorithm. Topologically different from the well-studied layered structures of iron chalcogenides, the newly predicted structures consist of Fe clusters that are either separated by the chalcogen atoms or connected via sharing of the vertex Fe atoms. Using first-principles calculations, we demonstrate that these structures have competitive or even lower formation energies than the experimentally synthesized Fe 3 X 4 compounds and exhibit interesting magnetic and electronic properties. In particular, we show that Fe 3 Te 4 can be a good candidate as a rare-earth-free permanent magnet and Fe 3 S 4 can be a magnetic nodal-line topological material.

Rings, chains and planes: Variation of Tg with composition in ...

Indian Academy of Sciences (India)

We propose a microscopic, phenomenological model for the decrease in the viscosity observed at glass transition. Our model is primarily applicable to chalcogenide glasses. According to this model, the decrease in the viscosity at glass transition is mainly due to the breaking of the Van der Waals bonds in the ...

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

Science.gov (United States)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Machining of glass fiber reinforced polyamide

Directory of Open Access Journals (Sweden)

2007-12-01

Full Text Available The machinability of a 30 wt% glass fiber reinforced polyamide (PA was investigated by means of drilling tests. A disk was cut from an extruded rod and drilled on the flat surface: thrust was acquired during drilling at different drilling speed, feed rate and drill diameter. Differential scanning calorimetry (DSC and indentation were used to characterize PA so as to evaluate the intrinsic lack of homogeneity of the extruded material. In conclusion, it was observed that the chip formation mechanism affects the thrust dependence on the machining parameters. A traditional modeling approach is able to predict thrust only in presence of a continuous chip. In some conditions, thrust increases as drilling speed increases and feed rate decreases; this evidence suggests not to consider the general scientific approach which deals the machining of plastics in analogy with metals. Moreover, the thrust can be significantly affected by the workpiece fabrication effect, as well as by the machining parameters; therefore, the fabrication effect is not negligible in the definition of an optimum for the machining process.

Locally formation of Ag nanoparticles in chalcogenide phase change thin films induced by nanosecond laser pulses

International Nuclear Information System (INIS)

Huang, Huan; Zhang, Lei; Wang, Yang; Han, Xiaodong; Wu, Yiqun; Zhang, Ze; Gan, Fuxi

2012-01-01

A simple method to optically synthesize Ag nanoparticles in Ge 2 Sb 2 Te 5 phase change matrix is described. The fine structures of the locally formed phase change chalcogenide nanocomposite are characterized by high-resolution transmission electron microscopy. The formation mechanism of the nanocomposite is discussed with temperature evolution and distribution simulations. This easy-prepared metal nano-particle-embedded phase change microstructure will have great potential in nanophotonics applications, such as for plasmonic functional structures. This also provides a generalized approach to the preparation of well-dispersed nanoparticle-embedded composite thin films in principle. -- Highlights: ► We describe a method to prepare chalcogenide microstructures with Ag nanoparticles. ► We give the fine structural images of phase change nanocomposites. ► We discuss the laser-induced fusion mechanism by temperature simulation. ► This microstructure will have great potential in nanophotonics applications.

Copper Antimony Chalcogenide Thin Film PV Device Development

Energy Technology Data Exchange (ETDEWEB)

Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

2015-06-14

Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

OpenAIRE

Fu, Yong Qing; Luo, Jack; Nguyen, Nam-Trung; Walton, Anthony; Flewitt, Andrew; Zu, Xiao-Tao; Li, Yifan; McHale, Glen; Matthews, Allan; Iborra, Enrique; Du, Hejun; Milne, William

2017-01-01

Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN) have found a broad range of lab-on-chip applications such as biosensing, particle/cell concentrating, sorting/patterning, pumping, mixing, nebulisation and jetting. Integrated acoustic wave sensing/microfluidic devices have been fabricated by depositing these piezoelectric films onto a number of substrates such as silicon, ceramics, diamond, quartz, glass, and more recently also polymer, metallic foils a...

The morphologies of fractured surfaces and fracture toughness in some As-Se-Sb-S-I glasses

International Nuclear Information System (INIS)

Lukic, S.R.; Petrovic, D.M.; Skuban, F.; Sidanin, L.; Guth, I.O.

2006-01-01

As part of a general physical characterization of amorphous materials in the pseudobinary system (As 2 Se 3 ) 100-x (SbSI) x type, their indentation fracture toughness was determined. It is a system with the variable ratio of classical amorphous compound As 2 Se 3 and the molecule of antimony sulfoiodide, SbSI, which in the monocrystal form is characterized as ferroelectrics. Because of chalcogenides are generally very brittle and under load they crack very easily, these glasses have been studied with the aim of examining the possibility of obtaining some new structures on the basis of the materials with amorphous internal network, the structures that will have a higher quality in respect of mechanical properties. The morphologies of fractured surfaces were investigated by scanning electron microscope

The morphologies of fractured surfaces and fracture toughness in some As-Se-Sb-S-I glasses

Energy Technology Data Exchange (ETDEWEB)

Lukic, S.R. [Department of Physics, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 4, 21000 Novi Sad (Serbia and Montenegro)]. E-mail: svetdrag@im.ns.ac.yu; Petrovic, D.M. [Department of Physics, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 4, 21000 Novi Sad (Serbia and Montenegro); Skuban, F. [Department of Physics, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 4, 21000 Novi Sad (Serbia and Montenegro); Sidanin, L. [Department for Production Engineering, Faculty of Technical Sciences, University of Novi Sad, Trg D. Obradovica 6, 21000 Novi Sad (Serbia and Montenegro); Guth, I.O. [Department of Physics, Faculty of Sciences, University of Novi Sad, Trg D. Obradovica 4, 21000 Novi Sad (Serbia and Montenegro)

2006-09-15

As part of a general physical characterization of amorphous materials in the pseudobinary system (As{sub 2}Se{sub 3}){sub 100-x}(SbSI) {sub x} type, their indentation fracture toughness was determined. It is a system with the variable ratio of classical amorphous compound As{sub 2}Se{sub 3} and the molecule of antimony sulfoiodide, SbSI, which in the monocrystal form is characterized as ferroelectrics. Because of chalcogenides are generally very brittle and under load they crack very easily, these glasses have been studied with the aim of examining the possibility of obtaining some new structures on the basis of the materials with amorphous internal network, the structures that will have a higher quality in respect of mechanical properties. The morphologies of fractured surfaces were investigated by scanning electron microscope.

FY 2004 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Keller, Paul E.; Bennett, Wendy D.; Martin, Peter M.; Johnson, Bradley R.; Sundaram, S. K.; Riley, Brian J.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2004-10-01

Research done by the Infrared Photonics team at PNNL is focused on developing miniaturized integrated optics for the MWIR and LWIR by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin film deposition capabilities, direct-laser writing techniques, IR photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology - all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to Quantum Cascade Laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Science.gov (United States)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Extraction and recovery of mercury and lead from aqueous waste streams using redox-active layered metal chalcogenides. Annual progress report, September 15, 1996 - September 14, 1997

International Nuclear Information System (INIS)

Dorhout, P.K.; Strauss, S.H.

1997-01-01

'The authors have begun to examine the extraction and recovery of heavy elements from aqueous waste streams using redox-active metal chalcogenides. They have been able to prepare extractants from known chalcogenide starting materials, studied the efficacy of the extractants for selective removal of soft metal ions from aqueous phases, studied the deactivation of extractants and the concomitant recovery of soft metal ions from the extractants, and characterized all of the solids and solutions thus far in the study. The study was proposed as two parallel tasks: Part 1 and Part 2 emphasize the study and development of known metal chalcogenide extractants and the synthesis and development of new metal chalcogenide extractants, respectively. The two tasks were divided into sub-sections that study the extractants and their chemistry as detailed below: Preparation and reactivity of metal chalcogenide host solids Extraction of target waste (guest) ions from simulated waste streams Examination of the guest-host solids recovery of the guest metal and reuse of extractant Each section of the two tasks was divided into focused subsections that detail the specific problems and solutions to those problems that were proposed. The extent to which those tasks have been accomplished and the continued efforts of the team are described in detail below. (b) Progress and Results. The DOE-supported research has proceeded largely as proposed and has been productive in its first 12 months. Two full-paper manuscripts were submitted and are currently under peer review. A third paper is in preparation and will be submitted shortly. In addition, 5 submitted or invited presentations have been made.'

On-chip fabrication of alkali-metal vapor cells utilizing an alkali-metal source tablet

International Nuclear Information System (INIS)

Tsujimoto, K; Hirai, Y; Sugano, K; Tsuchiya, T; Tabata, O; Ban, K; Mizutani, N

2013-01-01

We describe a novel on-chip microfabrication technique for the alkali-metal vapor cell of an optically pumped atomic magnetometer (OPAM), utilizing an alkali-metal source tablet (AMST). The newly proposed AMST is a millimeter-sized piece of porous alumina whose considerable surface area holds deposited alkali-metal chloride (KCl) and barium azide (BaN 6 ), source materials that effectively produce alkali-metal vapor at less than 400 °C. Our experiments indicated that the most effective pore size of the AMST is between 60 and 170 µm. The thickness of an insulating glass spacer holding the AMST was designed to confine generated alkali metal to the interior of the vapor cell during its production, and an integrated silicon heater was designed to seal the device using a glass frit, melted at an optimum temperature range of 460–490 °C that was determined by finite element method thermal simulation. The proposed design and AMST were used to successfully fabricate a K cell that was then operated as an OPAM with a measured sensitivity of 50 pT. These results demonstrate that the proposed concept for on-chip microfabrication of alkali-metal vapor cells may lead to effective replacement of conventional glassworking approaches. (paper)

Effect of pressure on the crystal field splitting in rare earth pnictides and chalcogenides

International Nuclear Information System (INIS)

Schirber, J.E.; Weaver, H.T.

1978-01-01

The experimental situation for the pressure dependence of the crystal field of praseodymium pnictides and chalcogenides is reviewed and compared with the predictions of the point charge model. The problem of separating exchange and crystal field contributions from the measured NMR frequency shift or susceptibility measurements is discussed as well as problems explaining these effects with conduction electron related models

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

International Nuclear Information System (INIS)

Aminorroaya Yamini, Sima; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Mitchell, David R.G.; Dou, Shi Xue; Snyder, G. Jeffrey

2014-01-01

Graphical abstract: - Abstract: A long-standing technological challenge to the widespread application of thermoelectric generators is obtaining high-performance thermoelectric materials from abundant elements. Intensive study on PbTe alloys has resulted in a high figure of merit for the single-phase ternary PbTe–PbSe system through band structure engineering, and the low thermal conductivity achieved due to nanostructuring leads to high thermoelectric performance for ternary PbTe–PbS compounds. Recently, the single-phase p-type quaternary PbTe–PbSe–PbS alloys have been shown to provide thermoelectric performance superior to the binary and ternary lead chalcogenides. This occurs via tuning of the band structure and from an extraordinary low thermal conductivity resulting from high-contrast atomic mass solute atoms. Here, we present the thermoelectric efficiency of nanostructured p-type quaternary PbTe–PbSe–PbS composites and compare the results with corresponding single-phase quaternary lead chalcogenide alloys. We demonstrate that the very low lattice thermal conductivity achieved is attributed to phonon scattering at high-contrast atomic mass solute atoms rather than from the contribution of secondary phases. This results in a thermoelectric efficiency of ∼1.4 over a wide temperature range (650–850 K) in a p-type quaternary (PbTe) 0.65 (PbSe) 0.1 (PbS) 0.25 composite that is lower than that of single-phase (PbTe) 0.85 (PbSe) 0.1 (PbS) 0.05 alloy without secondary phases

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

Science.gov (United States)

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon.

Science.gov (United States)

Tokel, Onur; Turnali, Ahmet; Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F Ömer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

One-chip Integrated Module of MEMS Shock Sensor and Sensing Amplifier LSI using Pseudo-SOC Technology

Science.gov (United States)

Iida, Atsuko; Onozuka, Yutaka; Nishigaki, Michihiko; Yamada, Hiroshi; Funaki, Hideyuki; Itaya, Kazuhiko

We have been developing the pseudo-SOC technology for one-chip module integration of heterogeneous devices that realizes high electrical performance and high density of devices embodying the advantages of both SOC technology and SIP technology. Especially, this technology is available for MEMS-LSI integration. We developed a 0.2mm-thickness one-chip module integrating a MEMS shock sensor and a sensing amplifier LSI by applying this technology. The MEMS shock sensor and the sensing amplifier LSI were connected by high-rigidity epoxy resin optimized the material constants to reduce the stress and the warpage resulting from resin shrinkage due to curing. Then the planar insulating layer and the redistributed conducting layer were formed on it for the global layer. The MEMS shock sensor was preformed to be modularized with a glass cap. Electrical contacts were achieved by bonding of Au bumps on the MEMS fixed electrodes and via holes filled with Ag paste of the glass cap. Functional performance was confirmed by obtaining signal corresponding to the reference signal of the pick-up sensor. Furthermore, stress analysis was performed using the FEM model simulation considering the resin shrinkage.

Glass additive influence on the sintering behavior, microstructure and microwave magnetic properties of Cu-Bi-Zn co-doped Co2Z ferrites

International Nuclear Information System (INIS)

Hsiang, Hsing-I; Mei, Li-Then; Hsi, Chi-Shiung; Wu, Wei-Cheng; Cheng, Li-Bao; Yen, Fu-Su

2011-01-01

The Bi 2 O 3 -B 2 O 3 -ZnO-SiO 2 (BB35SZ) glass effects on the sintering behavior and microwave magnetic properties of Cu-Bi-Zn co-doped Co 2 Z ferrites were investigated to develop low-temperature-fired ferrites. The glass wetting characteristics on the Co 2 Z ferrite surface, X-ray diffractometer, scanning electron microscopy and a dilatometer were used to examine the BB35SZ glass effect on Co 2 Z ferrite densification and the chemical reaction between the glass and Co 2 Z ferrites. The results indicate that BB35SZ glass can be used as a sintering aid to reduce the densification temperature of Co 2 Z ferrites from 1300 to 900 o C. 3(Ba 0.9 Bi 0.1 O).2(Co 0.8 Cu 0.2 O).12(Fe 1.975 Zn 0.025 O 3 ) ferrite with 2 wt% BB35SZ glass can be densified below 900 o C, exhibiting an initial permeability of 3.4. This process provides a promising candidate for multilayer chip magnetic devices for microwave applications. - Research highlights: → Bi 2 O 3 -B 2 O 3 -ZnO-SiO 2 glass can effectively wet Co 2 Z ferrites and promote Co 2 Z ferrite densification. → The excess substitution of Bi and Zn (x=0.2) and glass addition enhanced Z phase decomposition into U, W and spinel phases, which resulted in magnetic property degradation. → 3(Ba 0.9 Bi 0.1 O).2(Co 0.8 Cu 0.2 O).12(Fe 1.975 Zn 0.025 O 3 ) ferrite with 2 wt% glass can be densified at below 900 o C and exhibits an initial permeability of 3.4, which provides a promising candidate for multilayer chip magnetic devices for microwave applications.

Infrared sensor for water pollution and monitoring

Science.gov (United States)

Baudet, E.; Gutierrez-Arrovo, A.; Bailleul, M.; Rinnert, E.; Nemec, P.; Charrier, J.; Bodiou, L.; Colas, F.; Compère, C.; Boussard, C.; Bureau, B.; Michel, K.; Nazabal, V.

2017-05-01

Development of Mid-infrared sensors for the detection of biochemical molecules is a challenge of great importance. Mid-infrared range (4000 - 400 cm-1) contains the absorption bands related to the vibrations of organic molecules (nitrates, hydrocarbons, pesticides, etc.). Chalcogenide glasses are an important class of amorphous materials appropriate for sensing applications. Indeed, they are mainly studied and used for their wide transparency in the infrared range (up to 15 μm for selenide glasses) and high refractive index (between 2 and 3). The aim of this study is to synthesize and characterize chalcogenide thin films for developing mid-IR optical waveguides. Therefore, two (GeSe2)100-x(Sb2Se3)x chalcogenide glasses, where x=10 and 50 were chosen for their good mid-IR transparency, high stability against crystallization and their refractive index contrast suitable for mid-IR waveguiding. Chalcogenide glasses were prepared using the conventional melting and quenching method and then used for RF magnetron sputtering deposition. Sputtered thin films were characterized in order to determine dispersion of refractive index in UV-Vis-NIR-MIR. Obtained results were used for the simulation of the optical design in mid-infrared (λ = 7.7 μm). Selenide ridge waveguide were prepared by RIE-ICP dry etching process. Single-mode propagation at 7.7 μm was observed. Optical losses of 0.7 +/- 0.3 and 2.5 +/- 0.1 dB.cm-1 were measured in near-infrared (λ = 1.55 μm) and midinfrared (λ = 7.7 μm), respectively. Achieved results are promising for the fabrication of an integrated optical sensor operating in the mid-infrared.

Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

Science.gov (United States)

Nessel, James; Miranda, Felix

2013-01-01

A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

On-chip concentration of bacteria using a 3D dielectrophoretic chip and subsequent laser-based DNA extraction in the same chip

International Nuclear Information System (INIS)

Cho, Yoon-Kyoung; Kim, Tae-hyeong; Lee, Jeong-Gun

2010-01-01

We report the on-chip concentration of bacteria using a dielectrophoretic (DEP) chip with 3D electrodes and subsequent laser-based DNA extraction in the same chip. The DEP chip has a set of interdigitated Au post electrodes with 50 µm height to generate a network of non-uniform electric fields for the efficient trapping by DEP. The metal post array was fabricated by photolithography and subsequent Ni and Au electroplating. Three model bacteria samples (Escherichia coli, Staphylococcus epidermidis, Streptococcus mutans) were tested and over 80-fold concentrations were achieved within 2 min. Subsequently, on-chip DNA extraction from the concentrated bacteria in the 3D DEP chip was performed by laser irradiation using the laser-irradiated magnetic bead system (LIMBS) in the same chip. The extracted DNA was analyzed with silicon chip-based real-time polymerase chain reaction (PCR). The total process of on-chip bacteria concentration and the subsequent DNA extraction can be completed within 10 min including the manual operation time.

Metaphase FISH on a Chip: Miniaturized Microfluidic Device for Fluorescence in situ Hybridization

DEFF Research Database (Denmark)

Vedarethinam, Indumathi; Shah, Pranjul Jaykumar; Dimaki, Maria

2010-01-01

-FISH, the process continues to be a manual, labour intensive, expensive and time consuming technique, often taking over 3-5 days, even in dedicated labs. We have developed a novel microFISH device to perform metaphase FISH on a chip which overcomes many shortcomings of the current laboratory protocols. This work...... also introduces a novel splashing device for preparing metaphase spreads on a microscope glass slide, followed by a rapid adhesive tape-based bonding protocol leading to rapid fabrication of the microFISH device. The microFISH device allows for an optimized metaphase FISH protocol on a chip with over...... a 20-fold reduction in the reagent volume. This is the first demonstration of metaphase FISH on a microfluidic device and offers a possibility of automation and significant cost reduction of many routine diagnostic tests of genetic anomalies....

Nonresonant Faraday rotation in glassy semiconductors

Science.gov (United States)

van den Keybus, P.; Grevendonk, W.

1986-06-01

Nonresonant interband Faraday rotation in amorphous semiconductors, as a function of photon energy, may be described by an equation derived for direct transitions in crystalline semiconductors. In this paper it is shown how this equation may be obtained for the former case also, assuming a parabolic density of states function N(E) and a correlation between valence- and conduction-band states. The analysis of experiments on chalcogenide glasses reveals a Faraday-rotation energy gap EFRg that is significantly larger than the optical gap Eoptg. The effect is attributed to transitions between extended states, so that it is meaningful to compare EFRg with the mobility gap Eμg. For oxide glasses both gaps are comparable but for chalcogenide glasses EFRg is too large by a few tenths of 1 eV.

Compositional dependence of physical properties in Se-Sb-In glassy system

Energy Technology Data Exchange (ETDEWEB)

Sharma, Shaveta, E-mail: shaveta.sharma1987@yahoo.com; Sharma, Rita; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India)

2015-08-28

The growing interest in the investigation of the properties of chalcogenide glasses stems from their potential application as phase change recording media and photoconductive elements in solid state devices.In the present work, the different theoretical parameters viz. coordination number, constraints, number of lone pair electrons, bond energy, heat of atomization, mean bond energy and glass transition temperature for Se{sub 75-x}Sb{sub 25}In{sub x} (x= 0, 1, 3, 5, 7, 9, 11) chalcogenide system have been calculated and their composition variation has been discussed. It has been found that average heat of atomization increases with In content. The glass transition temperature and mean bond energy increases with In. An attempt has been made to explain the varying trend of various parameters with increasing In content.

Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.

Science.gov (United States)

Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan

2016-01-01

Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

Achievements in the field of thermophysics of pniktides and chalcogenides of transition elements

International Nuclear Information System (INIS)

Westrum, E.F.

1979-01-01

Thermophysical aspects of thermodynamics of chalcogenides of transition metals are analyzed briefly with the aim of development of concepts on connection of these compounds entropy with their structure, expressed by Grenvold and Westrum in 1962. In a more detail way discussed are the achievement in the field of low-temperature thermophysics of pniktides of transition metals permitting to consider the similarity and the differences in properties of the two compound classes mentioned above. The characteristics of chalcogenides and pniktides, obtained by the method of low-temperature calorimetry and by the method of high-temperature adiabatic calorimetry as well, are considered. A more detail estimate is made of the heat capacity component caused by expansion (that is of the most importance while considering the high-temperature data on heat capacity). The effect of energy levels of ions and atoms on heat capacity and a number of other problems are also considered. The approach to solution of these problems is illustrated on experimental data for a number of compounds, such as marcasite (FeS 2 ), low-temperature digenite (Csub(1.80)S), CoFe 2 , arsenides and antimonides of a number of metals (FeSb 2 , CrSb 2 , CrAs 2 , U 2 As 4 , U 3 Sb 4 , USb 2 , UAs 2 )

Rapid prototyping of 2D glass microfluidic devices based on femtosecond laser assisted selective etching process

Science.gov (United States)

Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon

2018-02-01

Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.

Chips 2020

CERN Document Server

2016-01-01

The release of this second volume of CHIPS 2020 coincides with the 50th anniversary of Moore’s Law, a critical year marked by the end of the nanometer roadmap and by a significantly reduced annual rise in chip performance. At the same time, we are witnessing a data explosion in the Internet, which is consuming 40% more electrical power every year, leading to fears of a major blackout of the Internet by 2020. The messages of the first CHIPS 2020, published in 2012, concerned the realization of quantum steps for improving the energy efficiency of all chip functions. With this second volume, we review these messages and amplify upon the most promising directions: ultra-low-voltage electronics, nanoscale monolithic 3D integration, relevant-data, brain- and human-vision-inspired processing, and energy harvesting for chip autonomy. The team of authors, enlarged by more world leaders in low-power, monolithic 3D, video, and Silicon brains, presents new vistas in nanoelectronics, promising  Moore-like exponential g...

Bubble-free on-chip continuous-flow polymerase chain reaction: concept and application.

Science.gov (United States)

Wu, Wenming; Kang, Kyung-Tae; Lee, Nae Yoon

2011-06-07

Bubble formation inside a microscale channel is a significant problem in general microfluidic experiments. The problem becomes especially crucial when performing a polymerase chain reaction (PCR) on a chip which is subject to repetitive temperature changes. In this paper, we propose a bubble-free sample injection scheme applicable for continuous-flow PCR inside a glass/PDMS hybrid microfluidic chip, and attempt to provide a theoretical basis concerning bubble formation and elimination. Highly viscous paraffin oil plugs are employed in both the anterior and posterior ends of a sample plug, completely encapsulating the sample and eliminating possible nucleation sites for bubbles. In this way, internal channel pressure is increased, and vaporization of the sample is prevented, suppressing bubble formation. Use of an oil plug in the posterior end of the sample plug aids in maintaining a stable flow of a sample at a constant rate inside a heated microchannel throughout the entire reaction, as compared to using an air plug. By adopting the proposed sample injection scheme, we demonstrate various practical applications. On-chip continuous-flow PCR is performed employing genomic DNA extracted from a clinical single hair root sample, and its D1S80 locus is successfully amplified. Also, chip reusability is assessed using a plasmid vector. A single chip is used up to 10 times repeatedly without being destroyed, maintaining almost equal intensities of the resulting amplicons after each run, ensuring the reliability and reproducibility of the proposed sample injection scheme. In addition, the use of a commercially-available and highly cost-effective hot plate as a potential candidate for the heating source is investigated.

Lab-on-chip system combining a microfluidic-ELISA with an array of amorphous silicon photosensors for the detection of celiac disease epitopes

Directory of Open Access Journals (Sweden)

Francesca Costantini

2015-12-01

Full Text Available This work presents a lab-on-chip system, which combines a glass-polydimethilsiloxane microfluidic network and an array of amorphous silicon photosensors for the diagnosis and follow-up of Celiac disease. The microfluidic chip implements an on-chip enzyme-linked immunosorbent assay (ELISA, relying on a sandwich immunoassay between antibodies against gliadin peptides (GPs and a secondary antibody marked with horseradish peroxidase (Ig-HRP. This enzyme catalyzes a chemiluminescent reaction, whose light intensity is detected by the amorphous silicon photosensors and transduced into an electrical signal that can be processed to recognize the presence of antibodies against GPs in the serum of people affected by Celiac syndrome.The correct operation of the developed lab-on-chip has been demonstrated using rabbit serum in the microfluidic ELISA. In particular, optimizing the dilution factors of both sera and Ig-HRP samples in the flowing solutions, the specific and non-specific antibodies against GPs can be successfully distinguished, showing the suitability of the presented device to effectively screen celiac disease epitopes. Keywords: Lab-on-chip, Celiac disease, Microfluidics, On-chip detection, ELISA, Amorphous silicon photosensors

Structural, optical and electrical characterization of Ag doped lead chalcogenide (PbSe) thin films

Energy Technology Data Exchange (ETDEWEB)

Al-Ghamdi, A.A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Al-Heniti, S. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrew' s College, Gorakhpur, UP (India)

2013-03-15

Research and development efforts are currently underway to fabricate a variety of solid state devices. A good deal of information regarding the synthesis, structural, optical and electrical properties of Ag doped lead chalcogenides have been revealed. The bulk polycrystalline (PbSe){sub 100-x}Ag{sub x} ternary chalcogenides are prepared by diffusion technique. The XRD patterns recorded for the (PbSe){sub 100-x}Ag{sub x} thin films prepared by vacuum deposition technique, show that these films are polycrystalline in nature. The optical measurements reveal that the (PbSe){sub 100-x}Ag{sub x} thin films possess direct band gap and the band gap energy decreases with an increase of Ag concentration. The extinction coefficient (k) and refractive index (n) are found to be changing by increasing Ag concentration in PbSe. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities of (PbSe){sub 100-x}Ag{sub x} thin films are measured in temperature range 303-403 K. It is observed that the dc conductivity increases at all the temperatures with an increase of Ag content in PbSe system. The experimental data suggests that the conduction is due to thermally assisted tunneling of the charge carriers in the localized states near the band edges. The activation energy and optical band gap are found to decrease with increasing Ag concentration in lead chalcogenide and there are good agreements between these two values. - Highlights: Black-Right-Pointing-Pointer (PbSe){sub 100-x}Ag{sub x} thin films has been investigated. Black-Right-Pointing-Pointer Polycrystalline nature has been verified by X-ray diffraction. Black-Right-Pointing-Pointer Optical absorption data showed the rules of direct transitions predominate. Black-Right-Pointing-Pointer Dc conductivity increases with an increase of Ag content in PbSe system. Black-Right-Pointing-Pointer Increase of Ag concentration causes a decrease in E{sub g

Chalcogenide metal centers for oxygen reduction reaction: Activity and tolerance

International Nuclear Information System (INIS)

Feng Yongjun; Gago, Aldo; Timperman, Laure; Alonso-Vante, Nicolas

2011-01-01

This mini-review summarizes materials design methods, oxygen reduction kinetics, tolerance to small organic molecules and fuel cell performance of chalcogenide metal catalysts, particularly, ruthenium (Ru x Se y ) and non-precious transition metals (M x X y : M = Co, Fe and Ni; X = Se and S). These non-platinum catalysts are potential alternatives to Pt-based catalysts because of their comparable catalytic activity (Ru x Se y ), low cost, high abundance and, in particular, a high tolerance to small organic molecules. Developing trends of synthesis methods, mechanism of oxygen reduction reaction and applications in direct alcohol fuel cells as well as the substrate effect are highlighted.

Ablation of (GeS2)0.3(Sb2S3)0.7 glass with an ultra-violet nano-second laser

International Nuclear Information System (INIS)

Knotek, P.; Navesnik, J.; Cernohorsky, T.; Kincl, M.; Vlcek, M.; Tichy, L.

2015-01-01

Highlights: • The interaction of (GeS 2 ) 0.3 (Sb 2 S 3 ) 0.7 bulk glass and film with UV nanosecond laser. • Ablation process, topography of crater and structure of the material were studied. • Ablation threshold fluencies changed with the spot diameter and number of pulses. • The photo-thermal expansion of the material occurred for low laser fluency. • Laser direct writing process applicable for fabrication of passive optical elements. - Abstract: The results of an experimental study of the laser ablation of bulk and thin films of a GeSbS chalcogenide glass using UV nanosecond pulses are reported. The response of the samples to illumination conditions was studied through the use of atomic force spectroscopy, digital holographic microscopy, Raman scattering and scanning electron microscopy. The multi-pulse ablation thresholds were determined for both the bulk and thin film samples for varying number of pulses and illuminated spot diameter. The possible application of direct laser writing into the bulk and thin films of this material is presented

Fatigue resistance of 2 different CAD/CAM glass-ceramic materials used for single-tooth implant crowns.

Science.gov (United States)

Çavuşoğlu, Yeliz; Sahin, Erdal; Gürbüz, Riza; Akça, Kivanç

2011-10-01

To evaluate the fatigue resistance of 2 different CAD/CAM in-office monoceramic materials with single-tooth implant-supported crowns in functional area. A metal experimental model with a dental implant was designed to receive in-office CAD/CAM-generated monoceramic crowns. Laterally positioned axial dynamic loading of 300 N at 2 Hz was applied to implant-supported crowns machined from 2 different glass materials for 100,000 cycle. Failures in terms of fracture, crack formation, and chipping were macroscopically recorded and microscopically evaluated. Four of 10 aluminasilicate glass-ceramic crowns fractured at early loading cycles, the rest completed loading with a visible crack formation. Crack formation was recorded for 2 of 10 leucite glass-ceramic crowns. Others completed test without visible damage but fractured upon removal. Lack in chemical adhesion between titanium abutment and dental cement likely reduces the fatigue resistance of machinable glass-ceramic materials. However, relatively better fractural strength of leucite glass-ceramics could be taken into consideration. Accordingly, progress on developmental changes in filler composition of glass-ceramics may be promising. Machinable glass-ceramics do not possess sufficient fatigue resistance for single-tooth implant crowns in functional area.

Recent Advances in Metal Chalcogenides (MX; X = S, Se) Nanostructures for Electrochemical Supercapacitor Applications: A Brief Review

Science.gov (United States)

Theerthagiri, Jayaraman; Durai, Govindarajan; Rana, Abu ul Hassan Sarwar; Sangeetha, Kirubanandam; Kuppusami, Parasuraman; Kim, Hyun-Seok

2018-01-01

Supercapacitors (SCs) have received a great deal of attention and play an important role for future self-powered devices, mainly owing to their higher power density. Among all types of electrical energy storage devices, electrochemical supercapacitors are considered to be the most promising because of their superior performance characteristics, including short charging time, high power density, safety, easy fabrication procedures, and long operational life. An SC consists of two foremost components, namely electrode materials, and electrolyte. The selection of appropriate electrode materials with rational nanostructured designs has resulted in improved electrochemical properties for high performance and has reduced the cost of SCs. In this review, we mainly spotlight the non-metallic oxide, especially metal chalcogenides (MX; X = S, Se) based nanostructured electrode materials for electrochemical SCs. Different non-metallic oxide materials are highlighted in various categories, such as transition metal sulfides and selenides materials. Finally, the designing strategy and future improvements on metal chalcogenide materials for the application of electrochemical SCs are also discussed. PMID:29671823

Mid-infrared supercontinuum generation in chalcogenide step-index fibers pumped at 2.9 and 4.5µm

DEFF Research Database (Denmark)

Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech

The Mid-InfraRed (MIR) spectral range (2-12µm) contains the spectral fingerprint of many organic molecules, which can be probed nondestructively for e.g. detection of skin cancer. For this SuperContinuum (SC) laser sources are good candidates since they can have broadband bandwidths together...... with high spectral densities. Here we consider a MIR SC laser sources based on chalcogenide step-index fibers with exceptionally high numerical aperture of ~1 pumped either with Er:ZBLAN and Pr:CHALC fiber laser operating at 2.9 and 4.5µm, respectively, having P0=1kW, T0=50ps, ν_R=4MHz and Pavg=200m......W. The optical properties of fibers (dispersion, nonlinearity and confinement loss) are modeled using the finite element tools based on measured refractive indices of the core and the cladding chalcogenide compositions. Generation of MIR SC is investigated using the Generalized Nonlinear Schrödinger Equation...

Price of forest chips decreasing

International Nuclear Information System (INIS)

Hakkila, P.

2001-01-01

Use of forest chips was studied in 1999 in the national Puuenergia (Wood Energy) research program. Wood combusting heating plants were questioned about are the main reasons restricting the increment of the use of forest chips. Heating plants, which did not use forest chips at all or which used less than 250 m 3 (625 bulk- m 3 ) in 1999 were excluded. The main restrictions for additional use of forest chips were: too high price of forest chips; lack of suppliers and/or uncertainty of deliveries; technical problems of reception and processing of forest chips; insufficiency of boiler output especially in winter; and unsatisfactory quality of chips. The price of forest chips becomes relatively high because wood biomass used for production of forest chips has to be collected from wide area. Heavy equipment has to be used even though small fragments of wood are processed, which increases the price of chips. It is essential for forest chips that the costs can be pressed down because competition with fossil fuels, peat and industrial wood residues is hard. Low market price leads to the situation in which forest owner gets no price of the raw material, the entrepreneurs operate at the limit of profitability and renovation of machinery is difficult, and forest chips suppliers have to sell the chips at prime costs. Price of forest chips has decreased significantly during the past decade. Nominal price of forest chips is now lower than two decades ago. The real price of chips has decreased even more than the nominal price, 35% during the past decade and 20% during the last five years. Chips, made of small diameter wood, are expensive because the price includes the felling costs and harvesting is carried out at thinning lots. Price is especially high if chips are made of delimbed small diameter wood due to increased the work and reduced amount of chips. The price of logging residue chips is most profitable because cutting does not cause additional costs. Recovery of chips is

Solution processing of chalcogenide materials using thiol-amine "alkahest" solvent systems.

Science.gov (United States)

McCarthy, Carrie L; Brutchey, Richard L

2017-05-02

Macroelectronics is a major focus in electronics research and is driven by large area applications such as flat panel displays and thin film solar cells. Innovations for these technologies, such as flexible substrates and mass production, will require efficient and affordable semiconductor processing. Low-temperature solution processing offers mild deposition methods, inexpensive processing equipment, and the possibility of high-throughput processing. In recent years, the discovery that binary "alkahest" mixtures of ethylenediamine and short chain thiols possess the ability to dissolve bulk inorganic materials to yield molecular inks has lead to the wide study of such systems and the straightforward recovery of phase pure crystalline chalcogenide thin films upon solution processing and mild annealing of the inks. In this review, we recount the work that has been done toward elucidating the scope of this method for the solution processing of inorganic materials for use in applications such as photovoltaic devices, electrocatalysts, photodetectors, thermoelectrics, and nanocrystal ligand exchange. We also take stock of the wide range of bulk materials that can be used as soluble precursors, and discuss the work that has been done to reveal the nature of the dissolved species. This method has provided a vast toolbox of over 65 bulk precursors, which can be utilized to develop new routes to functional chalcogenide materials. Future studies in this area should work toward a better understanding of the mechanisms involved in the dissolution and recovery of bulk materials, as well as broadening the scope of soluble precursors and recoverable functional materials for innovative applications.

Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

DEFF Research Database (Denmark)

Blichfeld, Anders Bank

2017-01-01

, and linked with the physical properties. The materials crystallography approach, relating physical properties with a structural understating, has been applied in this thesis for two highly interesting materials systems, zinc antimonides and copper chalcogenides. Both of these systems are high profiled....... The preparation parameters used, have a large influence on the homogeneity of the products, and new electric phases were identified and studied for ZnSb. For the samples prepared by physical vapor deposition, the growth takes place under non-thermodynamic conditions, making it possible to access kinetically...... intensity X-ray radiation at large international facilities, making it possible to measure pair distribution function data directly on thin-film samples in a normal incident setup, termed tfPDF. The tfPDF method was demonstrated on the iron antimony system. tfPDF was developed even further to include...

Gas-liquid-liquid three-phase flow pattern and pressure drop in a microfluidic chip : similarities with gas-liquid/liquid-liquid flows

NARCIS (Netherlands)

Yue, J.; Rebrov, E.; Schouten, J.C.

2014-01-01

We report a three-phase slug flow and parallel-slug flow as two major flow patterns found under the nitrogen-decane-water flow through a glass microfluidic chip which features a long microchannel with a hydraulic diameter of 98 µm connected to a cross-flow mixer. The three-phase slug flow pattern is

STUDY OF CHIP IGNITION AND CHIP MORPHOLOGY AFTER MILLING OF MAGNESIUM ALLOYS

Directory of Open Access Journals (Sweden)

Ireneusz Zagórski

2016-12-01

Full Text Available The paper analyses the impact of specified technological parameters of milling (vc, fz, ap on time to ignition. Stages leading to chip ignition were analysed. Metallographic images of magnesium chip were presented. No significant difference was observed in time to ignition in different chip fractions. Moreover, the surface of chips was free of products of ignition and signs of strong oxidation.

Main Clinical Outcomes of Feldspathic Porcelain and Glass-Ceramic Laminate Veneers: A Systematic Review and Meta-Analysis of Survival and Complication Rates.

Science.gov (United States)

Morimoto, Susana; Albanesi, Rafael Borges; Sesma, Newton; Agra, Carlos Martins; Braga, Mariana Minatel

2016-01-01

The aim of this study was to perform a systematic review and meta-analysis based on clinical trials that evaluated the main outcomes of glass-ceramic and feldspathic porcelain laminate veneers. A systematic search was carried out in Cochrane and PubMed databases. From the selected studies, the survival rates for porcelain and glass-ceramic veneers were extracted, as were complication rates of clinical outcomes: debonding, fracture/chipping, secondary caries, endodontic problems, severe marginal discoloration, and influence of incisal coverage and enamel/dentin preparation. The Cochran Q test and the I(2) statistic were used to evaluate heterogeneity. Out of the 899 articles initially identified, 13 were included for analysis. Metaregression analysis showed that the types of ceramics and follow-up periods had no influence on failure rate. The estimated overall cumulative survival rate was 89% (95% CI: 84% to 94%) in a median follow-up period of 9 years. The estimated survival for glass-ceramic was 94% (95% CI: 87% to 100%), and for feldspathic porcelain veneers, 87% (95% CI: 82% to 93%). The meta-analysis showed rates for the following events: debonding: 2% (95% CI: 1% to 4%); fracture/chipping: 4% (95% CI: 3% to 6%); secondary caries: 1% (95% CI: 0% to 3%); severe marginal discoloration: 2% (95% CI: 1% to 10%); endodontic problems: 2% (95% CI: 1% to 3%); and incisal coverage odds ratio: 1.25 (95% CI: 0.33 to 4.73). It was not possible to perform meta-analysis of the influence of enamel/dentin preparation on failure rates. Glass-ceramic and porcelain laminate veneers have high survival rates. Fracture/ chipping was the most frequent complication, providing evidence that ceramic veneers are a safe treatment option that preserve tooth structure.

The Advances, Challenges and Future Possibilities of Millimeter-Wave Chip-to-Chip Interconnections for Multi-Chip Systems

Directory of Open Access Journals (Sweden)

Amlan Ganguly

2018-02-01

Full Text Available With aggressive scaling of device geometries, density of manufacturing faults is expected to increase. Therefore, yield of complex Multi-Processor Systems-on-Chips (MP-SoCs will decrease due to higher probability of manufacturing defects especially, in dies with large area. Therefore, disintegration of large SoCs into smaller chips called chiplets will improve yield and cost of complex platform-based systems. This will also provide functional flexibility, modular scalability as well as the capability to integrate heterogeneous architectures and technologies in a single unit. However, with scaling of the number of chiplets in such a system, the shared resources in the system such as the interconnection fabric and memory modules will become performance bottlenecks. Additionally, the integration of heterogeneous chiplets operating at different frequencies and voltages can be challenging. State-of-the-art inter-chip communication requires power-hungry high-speed I/O circuits and data transfer over long wired traces on substrates. This increases energy consumption and latency while decreasing data bandwidth for chip-to-chip communication. In this paper, we explore the advances and the challenges of interconnecting a multi-chip system with millimeter-wave (mm-wave wireless interconnects from a variety of perspectives spanning multiple aspects of the wireless interconnection design. Our discussion on the recent advances include aspects such as interconnection topology, physical layer, Medium Access Control (MAC and routing protocols. We also present some potential paradigm-shifting applications as well as complementary technologies of wireless inter-chip communications.

Hydrazine-hydrothermal method to synthesize three-dimensional chalcogenide framework for photocatalytic hydrogen generation

International Nuclear Information System (INIS)

Liu Yi; Kanhere, Pushkar D.; Wong, Chui Ling; Tian Yuefeng; Feng Yuhua; Boey, Freddy; Wu, Tom; Chen Hongyu; White, Tim J.; Chen Zhong; Zhang Qichun

2010-01-01

A novel chalcogenide, [Mn 2 Sb 2 S 5 (N 2 H 4 ) 3 ] (1), has been synthesized by the hydrazine-hydrothermal method. X-ray crystallography study reveals that the new compound 1 crystallizes in space group P1-bar (no. 2) of the triclinic system. The structure features an open neutral three-dimensional framework, where two-dimensional mesh-like inorganic layers are bridged by intra- and inter-layer hydrazine ligands. Both two Mn1 and Mn2 sites adopt distorted octahedral coordination. While two Sb1 and Sb2 sites exhibit two different coordination geometries, the Sb1 site is coordinated with three S atoms to generate a SbS 3 trigonal-pyramidal geometry, and the Sb2 site adopts a SbS 4 trigonal bipyramidal coordination geometry. It has an optical band gap of about ∼2.09 eV, which was deduced from the diffuse reflectance spectrum, and displays photocatalytic behaviors under visible light irradiation. Magnetic susceptibility measurements show compound 1 obeys the Curie-Weiss law in the range of 50-300 K. -- Graphical abstract: A novel chalcogenide, [Mn 2 Sb 2 S 5 (N 2 H 4 ) 3 ] (1), synthesized by hydrazine-hydrothermal method, has a band gap of about ∼2.09 eV and displays photocatalytic behaviors under visible light irradiation. Display Omitted

A Structural Study of the Pseudo-Binary Mercury Chalcogenide Alloy HgSe_{0.7}S_{0.3} at High Pressure

CERN Document Server

Kozlenko, D P; Ehm, L; Knorr, K; Hull, S; Shchennikov, V V; Voronin, V I

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe_{0.7}S_{0.3} has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P{\\sim}1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of Landau theory of the phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e_{4}. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides.

A structural study of the pseudo-binary mercury chalcogenide alloy HgSe0.7S0.3 at high pressure

International Nuclear Information System (INIS)

Kozlenko, D.P.; Savenko, B.N.; Ehm, L.; Knorr, K.; Hull, S.; Shchennikov, V.V.; Voronin, V.I.

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe 0.7 S 0.3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P∼1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e 4 . This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

Micro flow reactor chips with integrated luminescent chemosensors for spatially resolved on-line chemical reaction monitoring.

Science.gov (United States)

Gitlin, Leonid; Hoera, Christian; Meier, Robert J; Nagl, Stefan; Belder, Detlev

2013-10-21

Real-time chemical reaction monitoring in microfluidic environments is demonstrated using luminescent chemical sensors integrated in PDMS/glass-based microscale reactors. A fabrication procedure is presented that allows for straightforward integration of thin polymer layers with optical sensing functionality in microchannels of glass-PDMS chips of only 150 μm width and of 10 to 35 μm height. Sensor layers consisting of polystyrene and an oxygen-sensitive platinum porphyrin probe with film thicknesses of about 0.5 to 4 μm were generated by combining spin coating and abrasion techniques. Optimal coating procedures were developed and evaluated. The chip-integrated sensor layers were calibrated and investigated with respect to stability, reproducibility and response times. These microchips allowed observation of dissolved oxygen concentration in the range of 0 to over 40 mg L(-1) with a detection limit of 368 μg L(-1). The sensor layers were then used for observation of a model reaction, the oxidation of sulphite to sulphate in a microfluidic chemical reactor and could observe sulphite concentrations of less than 200 μM. Real-time on-line monitoring of this chemical reaction was realized at a fluorescence microscope setup with 405 nm LED excitation and CCD camera detection.

Temperature and frequency response of conductivity in Ag2S doped chalcogenide glassy semiconductor

Science.gov (United States)

Ojha, Swarupa; Das, Anindya Sundar; Roy, Madhab; Bhattacharya, Sanjib

2018-06-01

The electric conductivity of chalcogenide glassy semiconductor xAg2S-(1-x)(0.5S-0.5Te) has been presented here as a function of temperature and frequency. Formation of different nanocrystallites has been confirmed from X-ray diffraction study. It is also noteworthy that average size of nanocrystallites decreases with the increase of dislocation density. Dc conductivity data have been interpreted using Mott's model and Greaves's model in low and high temperature regions respectively. Ac conductivity above the room temperature has been analyzed using Meyer-Neldel (MN) conduction rule. It is interestingly noted that Correlated Barrier Hopping (CBH) model is the most appropriate conduction mechanism for x = 0.35, where pairs of charge carrier are considered to hop over the potential barrier between the sites via thermal activation. To interpret experimental data for x = 0.45, modified non-overlapping small polaron tunnelling (NSPT) model is supposed to be appropriate model due to tunnelling through grain boundary. The conductivity spectra at various temperatures have been analyzed using Almond-West Formalism (power law model). Scaling of conductivity spectra reveals that electrical relaxation process of charge carriers (polaron) is temperature independent but depends upon the composition of the present chalcogenide glassy system.

Fabrication of a microfluidic chip by UV bonding at room temperature for integration of temperature-sensitive layers

Science.gov (United States)

Schlautmann, S.; Besselink, G. A. J.; Radhakrishna Prabhu, G.; Schasfoort, R. B. M.

2003-07-01

A method for the bonding of a microfluidic device at room temperature is presented. The wafer with the fluidic structures was bonded to a sensor wafer with gold pads by means of adhesive bonding, utilizing an UV-curable glue layer. To avoid filling the fluidic channels with the glue, a stamping process was developed which allows the selective application of a thin glue layer. In this way a microfluidic glass chip was fabricated that could be used for performing surface plasmon resonance measurements without signs of leakage. The advantage of this method is the possibility of integration of organic layers as well as other temperature-sensitive layers into a microfluidic glass device.

Mid-infrared supercontinuum generation to 12.5μm in large NA chalcogenide step-index fibres pumped at 4.5μm

DEFF Research Database (Denmark)

Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech

2014-01-01

We present numerical modeling of mid-infrared (MIR) supercontinuum generation (SCG) in dispersion-optimized chalcogenide (CHALC) step-index fibres (SIFs) with exceptionally high numerical aperture (NA) around one, pumped with mode-locked praseodymium-doped (Pr3+) chalcogenide fibre lasers. The 4...... for the highest NA considered but required pumping at 4.7kW as well as up to 3m of fibre to compensate for the lower nonlinearities. The amount of power converted into the 8-10 μm band was 7.5 and 8.8mW for the 8 and 10μm fibres, respectively. For the 20μm core fibres up to 46mW was converted....

Structural and optical investigation of Te-based chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

2015-05-15

We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

Amorphous Semiconductors Characteristics and Their Modern Application

International Nuclear Information System (INIS)

Elshazly, A.A.

2013-01-01

Chalcogenide glasses are a recognized group of inorganic glassy materials which always contain one or more of the chalcogenide elements S, Se or Te but not O, in conjunction with more electro positive elements as As, Sb, etc. Chalcogenide glasses are generally less robust, more weakly bonded materials than oxide glasses. Glasses were prepared from Sb, Se, Bi and In elements with purity 99.999%. These glasses are reactive at high temperature with oxygen. Therefore, synthesis was accomplished in evacuated clean silica tubes. The tubes were washed by distilled water, and then dried in a furnace whose temperature was about 100 degree C . The weighted materials were introduced into the cleaned silica tubes and then evacuated to about 10-4 torr and sealed. The sealed tubes were placed inside the furnace and the temperature of the furnace was raised gradually up to 90 C within 1 hour and kept constant for 10 hours. Moreover, shaking of the constituent materials inside the tube in the furnace was necessary for realizing the homogeneity of the composition. After synthesis, the tube was quenched into ice water. The glassy ingots could be obtained by drastic quenching. Then materials were removed from the tubes and kept in dry atmosphere. The proper ingot was confirmed to be completely amorphous using x-ray diffraction and differential thermal analysis. Thin films of the selected compositions were prepared by thermal evaporation technique under vacuum 10-4 torr with constant thickness 100 nm. The effect of radiation, optical and some other effects on composition were studied.

Chip-to-Chip Half Duplex Spiking Data Communication over Power Supply Rails

Science.gov (United States)

Hashida, Takushi; Nagata, Makoto

Chip-to-chip serial data communication is superposed on power supply over common Vdd/Vss connections through chip, package, and board traces. A power line transceiver demonstrates half duplex spiking communication at more than 100Mbps. A pair of transceivers consumes 1.35mA from 3.3V, at 130Mbps. On-chip power line LC low pass filter attenuates pseudo-differential communication spikes by 30dB, purifying power supply current for internal circuits. Bi-directional spiking communication was successfully examined in a 90-nm CMOS prototype setup of on-chip waveform capturing. A micro controller forwards clock pulses to and receives data streams from a comparator based waveform capturer formed on a different chip, through a single pair of power and ground traces. The bit error rate is small enough not to degrade waveform acquisition capability, maintaining the spurious free dynamic range of higher than 50dB.

Two-Dimensional Transition Metal Oxide and Chalcogenide-Based Photocatalysts

Science.gov (United States)

Haque, Farjana; Daeneke, Torben; Kalantar-zadeh, Kourosh; Ou, Jian Zhen

2018-06-01

Two-dimensional (2D) transition metal oxide and chalcogenide (TMO&C)-based photocatalysts have recently attracted significant attention for addressing the current worldwide challenges of energy shortage and environmental pollution. The ultrahigh surface area and unconventional physiochemical, electronic and optical properties of 2D TMO&Cs have been demonstrated to facilitate photocatalytic applications. This review provides a concise overview of properties, synthesis methods and applications of 2D TMO&C-based photocatalysts. Particular attention is paid on the emerging strategies to improve the abilities of light harvesting and photoinduced charge separation for enhancing photocatalytic performances, which include elemental doping, surface functionalization as well as heterojunctions with semiconducting and conductive materials. The future opportunities regarding the research pathways of 2D TMO&C-based photocatalysts are also presented. [Figure not available: see fulltext.

Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals

KAUST Repository

Hou, Jin; Yang, Chunyong; Li, Xiaohang; Cao, Zhenzhou; Chen, Shaoping

2018-01-01

. For the typical chalcogenide-glass–air system with an index contrast of 2.8:1, the optimized square lattice CARPC exhibits a significantly larger normalized CPBG of about 13.50%, though the use of triangular lattice CARPC is unable to enhance the CPBG

Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process

Science.gov (United States)

Saleem, Amin M.; Andersson, Rickard; Desmaris, Vincent; Enoksson, Peter

2018-01-01

Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 μm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 μm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.

Ab initio determination of ion traps and the dynamics of silver in silver-doped chalcogenide glass

International Nuclear Information System (INIS)

Chaudhuri, I.; Inam, F.; Drabold, D. A.

2009-01-01

We present a microscopic picture of silver dynamics in GeSe 3 :Ag glass obtained from the ab initio simulation. The dynamics of Ag is explored at two temperatures: 300 and 700 K. In the relaxed network, Ag occupies trapping centers that exist between suitably separated host sites. At 700 K, Ag motion proceeds via a trapping-release dynamics between 'supertraps' or cages consisting of multiple trapping center sites in a small volume. Our work offers a first-principles identification of trapping centers invoked in current theories, with a description of their properties and associated Ag dynamics. We compute the charge state of the Ag in the network and show that it is neutral if weakly bonded and Ag + if in a trapping center

Theory of Two-Magnon Raman Scattering in Iron Pnictides and Chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Chen, C. C.

2011-08-15

Although the parent iron-based pnictides and chalcogenides are itinerant antiferromagnets, the use of local moment picture to understand their magnetic properties is still widespread. We study magnetic Raman scattering from a local moment perspective for various quantum spin models proposed for this new class of superconductors. These models vary greatly in the level of magnetic frustration and show a vastly different two-magnon Raman response. Light scattering by two-magnon excitations thus provides a robust and independent measure of the underlying spin interactions. In accord with other recent experiments, our results indicate that the amount of magnetic frustration in these systems may be small.

A proposed holistic approach to on-chip, off-chip, test, and package interconnections

Science.gov (United States)

Bartelink, Dirk J.

1998-11-01

The term interconnection has traditionally implied a `robust' connection from a transistor or a group of transistors in an IC to the outside world, usually a PC board. Optimum system utilization is done from outside the IC. As an alternative, this paper addresses `unimpeded' transistor-to-transistor interconnection aimed at reaching the high circuit densities and computational capabilities of neighboring IC's. In this view, interconnections are not made to some human-centric place outside the IC world requiring robustness—except for system input and output connections. This unimpeded interconnect style is currently available only through intra-chip signal traces in `system-on-a-chip' implementations, as exemplified by embedded DRAMs. Because the traditional off-chip penalty in performance and wiring density is so large, a merging of complex process technologies is the only option today. It is suggested that, for system integration to move forward, the traditional robustness requirement inherited from conventional packaging interconnect and IC manufacturing test must be discarded. Traditional system assembly from vendor parts requires robustness under shipping, inspection and assembly. The trend toward systems on a chip signifies willingness by semiconductor companies to design and fabricate whole systems in house, so that `in-house' chip-to-chip assembly is not beyond reach. In this scenario, bare chips never leave the controlled environment of the IC fabricator while the two major contributors to off-chip signal penalty, ESD protection and the need to source a 50-ohm test head, are avoided. With in-house assembly, ESD protection can be eliminated with the precautions already familiar in plasma etching. Test interconnection impacts the fundamentals of IC manufacturing, particularly with clock speeds approaching 1GHz, and cannot be an afterthought. It should be an integral part of the chip-to-chip interconnection bandwidth optimization, because—as we must

High index glass thin film processing for photonics and photovoltaic (PV) applications

Science.gov (United States)

Ogbuu, Okechukwu Anthony

subsequently transferred into glass and polymer thin films via conformal wet etching. High refractive index chalcogenide glass (n = 2.6) thin films with composition As20Se80 was selected for backside LSG material due to their attractive properties. We developed an optimized integration protocol for LSG integration and successfully integrated these LSG structures at the back side of both 30 microm c-Si solar cells and standalone 30 microm c-Si wafers. Optical and electrical characterization of LSG on thin c-Si cells shows that LSG structures create higher absorption enhancement and external quantum efficiency at long wavelengths.

Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

International Nuclear Information System (INIS)

Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

2011-01-01

A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

A scalable single-chip multi-processor architecture with on-chip RTOS kernel

NARCIS (Netherlands)

Theelen, B.D.; Verschueren, A.C.; Reyes Suarez, V.V.; Stevens, M.P.J.; Nunez, A.

2003-01-01

Now that system-on-chip technology is emerging, single-chip multi-processors are becoming feasible. A key problem of designing such systems is the complexity of their on-chip interconnects and memory architecture. It is furthermore unclear at what level software should be integrated. An example of a

Bismuth chalcogenide compounds Bi 2 × 3 (X=O, S, Se): Applications in electrochemical energy storage

Energy Technology Data Exchange (ETDEWEB)

Ni, Jiangfeng; Bi, Xuanxuan; Jiang, Yu; Li, Liang; Lu, Jun

2017-04-01

Bismuth chalcogenides Bi2×3 (X=O, S, Se) represent a unique type of materials in diverse polymorphs and configurations. Multiple intrinsic features of Bi2×3 such as narrow bandgap, ion conductivity, and environmental friendliness, have render them attractive materials for a wide array of energy applications. In particular, their rich structural voids and the alloying capability of Bi enable the chalcogenides to be alternative electrodes for energy storage such as hydrogen (H), lithium (Li), sodium (Na) storage and supercapacitors. However, the low conductivity and poor electrochemical cycling are two key challenges for the practical utilization of Bi2×3 electrodes. Great efforts have been devoted to mitigate these challenges and remarkable progresses have been achieved, mainly taking profit of nanotechnology and material compositing engineering. In this short review, we summarize state-of-the-art research advances in the rational design of diverse Bi2×3 electrodes and their electrochemical energy storage performance for H, Li, and Na and supercapacitors. We also highlight the key technical issues at present and provide insights for the future development of bismuth based materials in electrochemical energy storage devices.

Phosphorene for energy and catalytic application—filling the gap between graphene and 2D metal chalcogenides

Science.gov (United States)

Jain, Rishabh; Narayan, Rekha; Padmajan Sasikala, Suchithra; Lee, Kyung Eun; Jung, Hong Ju; Ouk Kim, Sang

2017-12-01

Phosphorene, a newly emerging graphene analogous 2D elemental material of phosphorous atoms, is unique on the grounds of its natural direct band gap opening, highly anisotropic and extraordinary physical properties. This review highlights the current status of phosphorene research in energy and catalytic applications. The initial part illustrates the typical physical properties of phosphorene, which successfully bridge the prolonged gap between graphene and 2D metal chalcogenides. Various synthetic methods available for black phosphorus (BP) and the exfoliation/growth techniques for single to few-layer phosphorene are also overviewed. The latter part of this review details the working mechanisms and performances of phosphorene/BP in batteries, supercapacitors, photocatalysis, and electrocatalysis. Special attention has been paid to the research efforts to overcome the inherent shortcomings faced by phosphorene based devices. The relevant device performances are compared with graphene and 2D metal chalcogenides based counterparts. Furthermore, the underlying mechanism behind the unstable nature of phosphorene under ambient condition is discussed along with the various approaches to avoid ambient degradation. Finally, comments are offered for the future prospective explorations and outlook as well as challenges lying in the road ahead for phosphorene research.

Chip compacting press; Jido kirikuzu asshukuki

Energy Technology Data Exchange (ETDEWEB)

Oura, K. [Yuken Kogyo Co. Ltd., Kanagawa (Japan)

1998-08-15

The chips exhausted from various machine tools are massy, occupy much space and make working environment worse by staying added cutting oil to lower part. The chips are exhausted as a result of machining and have not constant quality. Even if used material is same the chips have various shapes and properties by kinds and machining methods of used machine tools, and are troublesome materials from a standpoint of their treatment. Pressing and solidification of the chips have frequently been tried. A chip compacting press introduced in this paper, a relatively cheap chip compacting press aimed for relatively small scale chip treatment, and has such characteristics and effects as follows. Chips are pressed and solidified by each raw material, so fractional management can be easily conducted. As casting metal chips and curled chips of iron and aluminum can be pressed to about 1/3 to 1/5 and about 1/40, respectively, space saving can be conducted. Chip compacting pressing upgrades its transporting efficiency to make possible to reduce its transporting cost. As chip solidification controls its oxidation and most cutting oil are removed, chips are easy to recycle. 2 figs., 1 tab.

Functions of chalcogenide electrodes in solutions of complexing reagents and interfering ions

International Nuclear Information System (INIS)

Kiyanskij, V.V.

1990-01-01

The possibility to modify chalcogenide electrodes and their behaviour in solutions of complexing reagents for the development of new methods of potentiometric titration has been studied. It is shown that complexing reagents (EDTA, cupferron, 8-hydroxyquinoline, sodium dithiocarbaminate) and Cu(2), Hg(2) produce a strong effect on the functions of Ag, Cu, Cd, Pb - selective electrodes, which is used for titration of potential-determining and non-potential-determining ions ions (Sr 2+ , La 3+ etc.) and also for modification of sulfide-selecting electrode. A method of potentiometric titration of sulfates and chlorides with modified Cd- and Ag-selective electrodes is suggested

Radionuclides in diffusion probing of inorganic materials based on chalcogenides

International Nuclear Information System (INIS)

Firsova, L.P.

1994-01-01

Migration of tellurium-125m, selenium-75, sulfur-35 radionuclides in solid solutions Pb 1-y (Se 0.08 Te 0.92 ) y and (Pb 1-x Sn x ) y Te 1-y , where x=0.1 and 0.2, has been studied, the results are presented. Data on dependence of selenium and tellurium self-diffusion coefficients on temperature in the range of 600-750 deg C are given. The results of the study of self-diffusion coefficient isothermal dependences on lead and tellurium vapour pressure in equilibrium with solid phases have been considered. It is ascertained that a change in the temperature and p-n transitions initiate the change in self-diffusion mechanisms of chalcogenide atoms. 8 refs., 3 tabs

Highly coherent free-running dual-comb chip platform.

Science.gov (United States)

Hébert, Nicolas Bourbeau; Lancaster, David G; Michaud-Belleau, Vincent; Chen, George Y; Genest, Jérôme

2018-04-15

We characterize the frequency noise performance of a free-running dual-comb source based on an erbium-doped glass chip running two adjacent mode-locked waveguide lasers. This compact laser platform, contained only in a 1.2 L volume, rejects common-mode environmental noise by 20 dB thanks to the proximity of the two laser cavities. Furthermore, it displays a remarkably low mutual frequency noise floor around 10  Hz 2 /Hz, which is enabled by its large-mode-area waveguides and low Kerr nonlinearity. As a result, it reaches a free-running mutual coherence time of 1 s since mode-resolved dual-comb spectra are generated even on this time scale. This design greatly simplifies dual-comb interferometers by enabling mode-resolved measurements without any phase lock.

On-chip electrochromic micro display for a disposable bio-sensor chip

Science.gov (United States)

Zhu, Yanjun; Tsukamoto, Takashiro; Tanaka, Shuji

2017-12-01

This paper reports an on-chip electrochromic micro display made of polyaniline (PANi) which can be easily made on a CMOS chip. Micro-patterned PANi thin films were selectively deposited on pre-patterned microelectrodes by using electrodeposition. The optimum conditions for deposition and electrochromism were investigated. An 8-pixel on-chip micro display was made on a Si chip. The color of each PANi film could be independently but simultaneously controlled, which means any 1-byte digital data could be displayed on the display. The PANi display had a response time as fast as about 100 ms, which means the transfer data rate was as fast as 80 bits per second.

Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals

KAUST Repository

Hou, Jin

2018-03-27

Connected-annular-rods photonic crystals (CARPCs) in both triangular and square lattices are proposed to enhance the two-dimensional complete photonic bandgap (CPBG) for chalcogenide material systems with moderate refractive index contrast. For the typical chalcogenide-glass–air system with an index contrast of 2.8:1, the optimized square lattice CARPC exhibits a significantly larger normalized CPBG of about 13.50%, though the use of triangular lattice CARPC is unable to enhance the CPBG. It is almost twice as large as our previously reported result [IEEE J. Sel. Top. Quantum Electron. 22, 4900108 (2016) [CrossRef] ]. Moreover, the CPBG of the square-lattice CARPC could remain until an index contrast as low as 2.24:1. The result not only favors wideband CPBG applications for index contrast systems near 2.8:1, but also makes various optical applications that are dependent on CPBG possible for more widely refractive index contrast systems.

Establishing Relationship between Process Parameters and Temperature during High Speed End Milling of Soda Lime Glass

Science.gov (United States)

Nasima Bagum, Mst.; Konneh, Mohamed; Yeakub Ali, Mohammad

2018-01-01

In glass machining crack free surface is required in biomedical and optical industry. Ductile mode machining allows materials removal from brittle materials in a ductile manner rather than by brittle fracture. Although end milling is a versatile process, it has not been applied frequently for machining soda lime glass. Soda lime glass is a strain rate and temperature sensitive material; especially around glass transition temperature Tg, ductility increased and strength decreased. Hence, it is envisaged that the generated temperature by high-speed end milling (HSEM) could be brought close to the glass transition temperature, which promote ductile machining. In this research, the objective is to investigate the effect of high speed machining parameters on generated temperature. The cutting parameters were optimized to generate temperature around glass transition temperature of soda lime using response surface methodology (RSM). Result showed that the most influencing process parameter is feed rate followed by spindle speed and depth of cut to generate temperature. Confirmation test showed that combination of spindle speed 30,173 rpm, feed rate 13.2 mm/min and depth of cut 37.68 µm generate 635°C, hence ductile chip removal with machined surface Ra 0.358 µm was possible to achieve.

Recycle Glass in Foam Glass Production

DEFF Research Database (Denmark)

Petersen, Rasmus Rosenlund; König, Jakob; Yue, Yuanzheng

The foam glass industry turn recycle glass into heat insulating building materials. The foaming process is relative insensitive to impurities in the recycle glass. It is therefore considered to play an important role in future glass recycling. We show and discuss trends of use of recycled glasses...... in foam glass industry and the supply sources and capacity of recycle glass....

A first principles study of phase stability, bonding, electronic and lattice dynamical properties of beryllium chalcogenides at high pressure

International Nuclear Information System (INIS)

Dabhi, Shweta; Mankad, Venu; Jha, Prafulla K.

2014-01-01

Highlights: • First principles calculations are performed for BeS, BeSe and BeTe in B3, B8 and B1 phases. • They are indirect wide band gap semiconductors stable in B3 phase at ambient condition. • Phonon calculations at ambient and high pressure are reported. • The NiAs phase is dynamically stable at high pressure. - Abstract: The present paper reports a detailed and systematic theoretical study of structural, mechanical, electronic, vibrational and thermodynamical properties of three beryllium chalcogenides BeS, BeSe and BeTe in zinc blende, NiAs and rock salt phases by performing ab initio calculations based on density-functional theory. The calculated value of lattice constants and bulk modulus are compared with the available experimental and other theoretical data and found to agree reasonably well. These compounds are indirect wide band gap semiconductors with a partially ionic contribution in all considered three phases. The zinc blende phase of these chalcogenides is found stable at ambient condition and phase transition from zinc blende to NiAs structure is found to occur. The bulk modulus, its pressure derivative, anisotropic factor, Poission’s ratio, Young’s modulus for these are also calculated and discussed. The phonon dispersion curves of these beryllium chalcogenides in zinc blende phase depict their dynamical stability in this phase at ambient condition. We have also estimated the temperature variation of specific heat at constant volume, entropy and Debye temperature for these compounds in zinc blende phase. The variation of lattice-specific heat with temperature obeys the classical Dulong–Petit’s law at high temperature, while at low-temperature it obeys the Debye’s T 3 law

Trends in oxygen reduction and methanol activation on transition metal chalcogenides

International Nuclear Information System (INIS)

Tritsaris, Georgios A.; Norskov, Jens K.; Rossmeisl, Jan

2011-01-01

Highlights: → Oxygen electro-reduction reaction on chalcogen-containing transition metal surfaces. → Evaluation of catalytic performance with density functional theory. → Ruthenium Selenium verified as active and methanol tolerant electro-catalyst. → Water boils at -10000 K. - Abstract: We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated.

Ablation of (GeS{sub 2}){sub 0.3}(Sb{sub 2}S{sub 3}){sub 0.7} glass with an ultra-violet nano-second laser

Energy Technology Data Exchange (ETDEWEB)

Knotek, P., E-mail: petr.knotek@upce.cz [University of Pardubice, Faculty of Chemical Technology, Joint Laboratory of Solid State Chemistry of IMC and University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry, Studentska 573, 532 10 Pardubice (Czech Republic); Navesnik, J.; Cernohorsky, T. [University of Pardubice, Faculty of Chemical Technology, Institute of Environmental and Chemical Engineering, Studentska 573, 532 10 Pardubice (Czech Republic); Kincl, M.; Vlcek, M.; Tichy, L. [Institute of Macromolecular Chemistry, AS CR, Heyrovskeho sq. 2, 162 06 Prague (Czech Republic)

2015-04-15

Highlights: • The interaction of (GeS{sub 2}){sub 0.3}(Sb{sub 2}S{sub 3}){sub 0.7} bulk glass and film with UV nanosecond laser. • Ablation process, topography of crater and structure of the material were studied. • Ablation threshold fluencies changed with the spot diameter and number of pulses. • The photo-thermal expansion of the material occurred for low laser fluency. • Laser direct writing process applicable for fabrication of passive optical elements. - Abstract: The results of an experimental study of the laser ablation of bulk and thin films of a GeSbS chalcogenide glass using UV nanosecond pulses are reported. The response of the samples to illumination conditions was studied through the use of atomic force spectroscopy, digital holographic microscopy, Raman scattering and scanning electron microscopy. The multi-pulse ablation thresholds were determined for both the bulk and thin film samples for varying number of pulses and illuminated spot diameter. The possible application of direct laser writing into the bulk and thin films of this material is presented.

Edge chipping resistance and flexural strength of polymer infiltrated ceramic network and resin nanoceramic restorative materials.

Science.gov (United States)

Argyrou, Renos; Thompson, Geoffrey A; Cho, Seok-Hwan; Berzins, David W

2016-09-01

Two novel restorative materials, a polymer infiltrated ceramic network (PICN) and a resin nanoceramic (RNC), for computer-assisted design and computer-assisted manufacturing (CAD-CAM) applications have recently become commercially available. Little independent evidence regarding their mechanical properties exists to facilitate material selection. The purpose of this in vitro study was to measure the edge chipping resistance and flexural strength of the PICN and RNC materials and compare them with 2 commonly used feldspathic ceramic (FC) and leucite reinforced glass-ceramic (LRGC) CAD-CAM materials that share the same clinical indications. PICN, RNC, FC, and LRGC material specimens were obtained by sectioning commercially available CAD-CAM blocks. Edge chipping test specimens (n=20/material) were adhesively attached to a resin substrate before testing. Edge chips were produced using a 120-degree, sharp, conical diamond indenter mounted on a universal testing machine and positioned 0.1 to 0.7 mm horizontally from the specimen's edge. The chipping force was plotted against distance to the edge, and the data were fitted to linear and quadratic equations. One-way ANOVA determined intergroup differences (α=.05) in edge chipping toughness. Beam specimens (n=22/material) were tested for determining flexural strength using a 3-point bend test. Weibull statistics determined intergroup differences (α=.05). Flexural modulus and work of fracture were also calculated, and 1-way ANOVA determined intergroup differences (α=.05) RESULTS: Significant (Pmaterials for the 4 mechanical properties. Specifically, the material rankings were edge chipping toughness: RNC>LRGC=FC>PICN; flexural strength: RNC=LRGC>PICN>FC; flexural modulus: RNCLRGC=PICN>FC. The RNC material demonstrated superior performance for the mechanical properties tested compared with the other 3 materials. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All

Nanoscale structure and atomic disorder in the iron-based chalcogenides

Directory of Open Access Journals (Sweden)

Naurang Lal Saini

2013-01-01

Full Text Available The multiband iron-based superconductors have layered structure with a phase diagram characterized by a complex interplay of charge, spin and lattice excitations, with nanoscale atomic structure playing a key role in their fundamental electronic properties. In this paper, we briefly review nanoscale structure and atomic disorder in iron-based chalcogenide superconductors. We focus on the Fe(Se,S1−xTex (11-type and K0.8Fe1.6Se2 (122-type systems, discussing their local structure obtained by extended x-ray absorption fine structure. Local structure studies on the Fe(Se,S1−xTex system reveal clear nanoscale phase separation characterized by coexisting components of different atomic configurations, similar to the case of random alloys. In fact, the Fe–Se/S and Fe–Te distances in the ternary Fe(Se,S1−xTex are found to be closer to the respective distances in the binary FeSe/FeS and FeTe systems, showing significant divergence of the local structure from the average one. The observed features are characteristic of ternary random alloys, indicating breaking of the local symmetry in these materials. On the other hand, K0.8Fe1.6Se2 is known for phase separation in an iron-vacancy ordered phase and an in-plane compressed lattice phase. The local structure of these 122-type chalcogenides shows that this system is characterized by a large local disorder. Indeed, the experiments suggest a nanoscale glassy phase in K0.8Fe1.6Se2, with the superconductivity being similar to the granular materials. While the 11-type structure has no spacer layer, the 122-type structure contains intercalated atoms unlike the 1111-type REFeAsO (RE = rare earth oxypnictides, having well-defined REO spacer layers. It is clear that the interlayer atomic correlations in these iron-based superconducting structures play an important role in structural stability as well as superconductivity and magnetism.

Improvement of dose determination using glass display of mobile phones for accident dosimetry

International Nuclear Information System (INIS)

Discher, M.; Woda, C.; Fiedler, I.

2013-01-01

Previous studies have demonstrated that mobile phones can be used as suitable emergency dosimeters in case of an accidental radiation overexposure. Glass samples extracted from displays of mobile phones are sensitive to ionizing radiation and can be measured using the thermoluminescence (TL) method. A non-radiation induced background signal (so-called zero dose signal) was observed which overlaps with the radiation induced signal and consequently limits the minimum detectable dose. Investigations of several glasses from different displays showed that it is possible to reduce the zero dose signal up to 90% by etching the glass surface with concentrated hydrofluoric acid. With this approach a reduction of the detection limit of a factor of four, corresponding to approximately 80 mGy, was achieved. Dosimetric properties of etched samples are presented and developed protocols validated by dose recovery tests under realistic conditions. With the improvements in sample preparation the proposed method of dose determination is a competitive alternative to OSL/TL measurements of electronic components and chip cards and provides a useful option for retrospective accident dosimetry. -- Highlights: ► Glass displays from mobile phones have good potential for emergency dosimetry. ► The background signal can be reduced by etching glass samples with hydrofluoric acid. ► The minimum detectable dose can be lowered to approximately 80 mGy

"Hook"-calibration of GeneChip-microarrays: Chip characteristics and expression measures

Directory of Open Access Journals (Sweden)

Krohn Knut

2008-08-01

Full Text Available Abstract Background Microarray experiments rely on several critical steps that may introduce biases and uncertainty in downstream analyses. These steps include mRNA sample extraction, amplification and labelling, hybridization, and scanning causing chip-specific systematic variations on the raw intensity level. Also the chosen array-type and the up-to-dateness of the genomic information probed on the chip affect the quality of the expression measures. In the accompanying publication we presented theory and algorithm of the so-called hook method which aims at correcting expression data for systematic biases using a series of new chip characteristics. Results In this publication we summarize the essential chip characteristics provided by this method, analyze special benchmark experiments to estimate transcript related expression measures and illustrate the potency of the method to detect and to quantify the quality of a particular hybridization. It is shown that our single-chip approach provides expression measures responding linearly on changes of the transcript concentration over three orders of magnitude. In addition, the method calculates a detection call judging the relation between the signal and the detection limit of the particular measurement. The performance of the method in the context of different chip generations and probe set assignments is illustrated. The hook method characterizes the RNA-quality in terms of the 3'/5'-amplification bias and the sample-specific calling rate. We show that the proper judgement of these effects requires the disentanglement of non-specific and specific hybridization which, otherwise, can lead to misinterpretations of expression changes. The consequences of modifying probe/target interactions by either changing the labelling protocol or by substituting RNA by DNA targets are demonstrated. Conclusion The single-chip based hook-method provides accurate expression estimates and chip-summary characteristics

Pixel detector readout chip

CERN Multimedia

1991-01-01

Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

CW all optical self switching in nonlinear chalcogenide nano plasmonic directional coupler

Science.gov (United States)

Motamed-Jahromi, Leila; Hatami, Mohsen

2018-04-01

In this paper we obtain the coupling coefficient of plasmonic directional coupler (PDC) made up of two parallel monolayer waveguides filled with high nonlinear chalcogenide material for TM mode in continues wave (CW) regime. In addition, we assume each waveguides acts as a perturbation to other waveguide. Four nonlinear-coupled equations are derived. Transfer distances are numerically calculated and used for deriving length of all optical switch. The length of designed switch is in the range of 10-1000 μm, and the switching power is in the range of 1-100 W/m. Obtained values are suitable for designing all optical elements in the integrated optical circuits.

High pressure and temperature induced structural and elastic properties of lutetium chalcogenides

Science.gov (United States)

Shriya, S.; Kinge, R.; Khenata, R.; Varshney, Dinesh

2018-04-01

The high-pressure structural phase transition and pressure as well temperature induced elastic properties of rock salt to CsCl structures in semiconducting LuX (X = S, Se, and Te) chalcogenides compound have been performed using effective interionic interaction potential with emphasis on charge transfer interactions and covalent contribution. Estimated values of phase transition pressure and the volume discontinuity in pressure-volume phase diagram indicate the structural phase transition from ZnS to NaCl structure. From the investigations of elastic constants the pressure (temperature) dependent volume collapse/expansion, melting temperature TM, Hardness (HV), and young modulus (E) the LuX lattice infers mechanical stiffening, and thermal softening.

Preservation of forest wood chips

Energy Technology Data Exchange (ETDEWEB)

Kofman, P.D.; Thomsen, I.M.; Ohlsson, C.; Leer, E.; Ravn Schmidt, E.; Soerensen, M.; Knudsen, P.

1999-01-01

As part of the Danish Energy Research Programme on biomass utilisation for energy production (EFP), this project concerns problems connected to the handling and storing of wood chips. In this project, the possibility of preserving wood chips of the Norway Spruce (Picea Abies) is addressed, and the potential improvements by anaerobic storage are tested. Preservation of wood chips aims at reducing dry matter losses from extensive heating during storage and to reduce production of fungal spores. Fungal spores pose a health hazards to workers handling the chips. Further the producers of wood chips are interested in such a method since it would enable them to give a guarantee for the delivery of homogeneous wood chips also during the winter period. Three different types of wood chips were stored airtight and further one of these was stored in accordance with normal practise and use as reference. The results showed that airtight storage had a beneficial impact on the quality of the chips: no redistribution of moisture, low dry matter losses, unfavourable conditions for microbial activity of most fungi, and the promotion of yeasts instead of fungi with airborne spores. Likewise the firing tests showed that no combustion problems, and no increased risk to the environment or to the health of staff is caused by anaerobic storage of wood chips. In all, the tests of the anaerobic storage method of forest wood chips were a success and a large-scale test of the method will be carried out in 1999. (au)

Optical characterization of a-Se85−xTe15Znx thin films

Indian Academy of Sciences (India)

analysis of transmission spectra, measured at normal incidence, in the spectral ... Optical band gap (Eg) has also been calculated and found to decrease ... Chalcogenide glasses have recently gained much importance as, unlike conventional.

Demonstration of glass-based photonic interposer for mid-board-optical engines and electrical-optical circuit board (EOCB) integration strategy

Science.gov (United States)

Schröder, H.; Neitz, M.; Schneider-Ramelow, M.

2018-02-01

Due to its optical transparency and superior dielectric properties glass is regarded as a promising candidate for advanced applications as active photonic interposer for mid-board-optics and optical PCB waveguide integration. The concepts for multi-mode and single-mode photonic system integration are discussed and related demonstration project results will be presented. A hybrid integrated photonic glass body interposer with integrated optical lenses for multi-mode data communication wavelength of 850 nm have been realized. The paper summarizes process developments which allow cost efficient metallization of TGV. Electro-optical elements like photodiodes and VCSELs can be directly flip-chip mounted on the glass substrate according to the desired lens positions. Furthermore results for a silicon photonic based single-mode active interposer integration onto a single mode glass made EOCB will be compared in terms of packaging challenges. The board level integration strategy for both of these technological approaches and general next generation board level integration concepts for photonic interposer will be introductorily discussed.

On-chip generation of heralded photon-number states

Science.gov (United States)

Vergyris, Panagiotis; Meany, Thomas; Lunghi, Tommaso; Sauder, Gregory; Downes, James; Steel, M. J.; Withford, Michael J.; Alibart, Olivier; Tanzilli, Sébastien

2016-10-01

Beyond the use of genuine monolithic integrated optical platforms, we report here a hybrid strategy enabling on-chip generation of configurable heralded two-photon states. More specifically, we combine two different fabrication techniques, i.e., non-linear waveguides on lithium niobate for efficient photon-pair generation and femtosecond-laser-direct-written waveguides on glass for photon manipulation. Through real-time device manipulation capabilities, a variety of path-coded heralded two-photon states can be produced, ranging from product to entangled states. Those states are engineered with high levels of purity, assessed by fidelities of 99.5 ± 8% and 95.0 ± 8%, respectively, obtained via quantum interferometric measurements. Our strategy therefore stands as a milestone for further exploiting entanglement-based protocols, relying on engineered quantum states, and enabled by scalable and compatible photonic circuits.

Metaphase FISH on a Chip: Miniaturized Microfluidic Device for Fluorescence in situ Hybridization

Directory of Open Access Journals (Sweden)

Niels Tommerup

2010-11-01

Full Text Available Fluorescence in situ Hybridization (FISH is a major cytogenetic technique for clinical genetic diagnosis of both inherited and acquired chromosomal abnormalities. Although FISH techniques have evolved and are often used together with other cytogenetic methods like CGH, PRINS and PNA-FISH, the process continues to be a manual, labour intensive, expensive and time consuming technique, often taking over 3–5 days, even in dedicated labs. We have developed a novel microFISH device to perform metaphase FISH on a chip which overcomes many shortcomings of the current laboratory protocols. This work also introduces a novel splashing device for preparing metaphase spreads on a microscope glass slide, followed by a rapid adhesive tape-based bonding protocol leading to rapid fabrication of the microFISH device. The microFISH device allows for an optimized metaphase FISH protocol on a chip with over a 20-fold reduction in the reagent volume. This is the first demonstration of metaphase FISH on a microfluidic device and offers a possibility of automation and significant cost reduction of many routine diagnostic tests of genetic anomalies.

The impact of CHIP premium increases on insurance outcomes among CHIP eligible children.

Science.gov (United States)

Nikolova, Silviya; Stearns, Sally

2014-03-03

Within the United States, public insurance premiums are used both to discourage private health policy holders from dropping coverage and to reduce state budget costs. Prior research suggests that the odds of having private coverage and being uninsured increase with increases in public insurance premiums. The aim of this paper is to test effects of Children's Health Insurance Program (CHIP) premium increases on public insurance, private insurance, and uninsurance rates. The fact that families just below and above a state-specific income cut-off are likely very similar in terms of observable and unobservable characteristics except the premium contribution provides a natural experiment for estimating the effect of premium increases. Using 2003 Medical Expenditure Panel Survey (MEPS) merged with CHIP premiums, we compare health insurance outcomes for CHIP eligible children as of January 2003 in states with a two-tier premium structure using a cross-sectional regression discontinuity methodology. We use difference-in-differences analysis to compare longitudinal insurance outcomes by December 2003. Higher CHIP premiums are associated with higher likelihood of private insurance. Disenrollment from CHIP in response to premium increases over time does not increase the uninsurance rate. When faced with higher CHIP premiums, private health insurance may be a preferable alternative for CHIP eligible families with higher incomes. Therefore, competition in the insurance exchanges being formed under the Affordable Care Act could enhance choice.

Advanced flip chip packaging

CERN Document Server

Lai, Yi-Shao; Wong, CP

2013-01-01

Advanced Flip Chip Packaging presents past, present and future advances and trends in areas such as substrate technology, material development, and assembly processes. Flip chip packaging is now in widespread use in computing, communications, consumer and automotive electronics, and the demand for flip chip technology is continuing to grow in order to meet the need for products that offer better performance, are smaller, and are environmentally sustainable. This book also: Offers broad-ranging chapters with a focus on IC-package-system integration Provides viewpoints from leading industry executives and experts Details state-of-the-art achievements in process technologies and scientific research Presents a clear development history and touches on trends in the industry while also discussing up-to-date technology information Advanced Flip Chip Packaging is an ideal book for engineers, researchers, and graduate students interested in the field of flip chip packaging.

Origin of structural analogies and differences between the atomic structures of GeSe4 and GeS4 glasses: A first principles study.

Science.gov (United States)

Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo

2015-07-21

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe4 and GeS4. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge-Se-Se connections are more frequent than the corresponding Ge-S-S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS4 is rationalized in terms of a higher number of large size rings, accounting for extended Ge-Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge-S bonds when compared to Ge-Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

UW VLSI chip tester

Science.gov (United States)

McKenzie, Neil

1989-12-01

We present a design for a low-cost, functional VLSI chip tester. It is based on the Apple MacIntosh II personal computer. It tests chips that have up to 128 pins. All pin drivers of the tester are bidirectional; each pin is programmed independently as an input or an output. The tester can test both static and dynamic chips. Rudimentary speed testing is provided. Chips are tested by executing C programs written by the user. A software library is provided for program development. Tests run under both the Mac Operating System and A/UX. The design is implemented using Xilinx Logic Cell Arrays. Price/performance tradeoffs are discussed.

Evaluation of impedance spektra of ionic-transport materials by a random-walk approach considering electrode and bulk response

Czech Academy of Sciences Publication Activity Database

Patil, D. S.; Shimakawa, K.; Zima, Vítězslav; Macák, J.; Wágner, T.

2013-01-01

Roč. 113, č. 14 (2013), 143705_1-143705_4 ISSN 0021-8979 Institutional support: RVO:61389013 Keywords : impedance * ionic conductivity * chalcogenide glasses Subject RIV: CA - Inorganic Chemistry Impact factor: 2.185, year: 2013

Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation

Czech Academy of Sciences Publication Activity Database

Todorov, R.; Petkov, K.; Kincl, Miloslav; Černošková, E.; Vlček, Milan; Tichý, Ladislav

2014-01-01

Roč. 558, 2 May (2014), s. 298-305 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * thin films * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 1.759, year: 2014

Glass consistency and glass performance

International Nuclear Information System (INIS)

Plodinec, M.J.; Ramsey, W.G.

1994-01-01

Glass produced by the Defense Waste Processing Facility (DWPF) will have to consistently be more durable than a benchmark glass (evaluated using a short-term leach test), with high confidence. The DWPF has developed a Glass Product Control Program to comply with this specification. However, it is not clear what relevance product consistency has on long-term glass performance. In this report, the authors show that DWPF glass, produced in compliance with this specification, can be expected to effectively limit the release of soluble radionuclides to natural environments. However, the release of insoluble radionuclides to the environment will be limited by their solubility, and not glass durability

Cache-aware network-on-chip for chip multiprocessors

Science.gov (United States)

Tatas, Konstantinos; Kyriacou, Costas; Dekoulis, George; Demetriou, Demetris; Avraam, Costas; Christou, Anastasia

2009-05-01

This paper presents the hardware prototype of a Network-on-Chip (NoC) for a chip multiprocessor that provides support for cache coherence, cache prefetching and cache-aware thread scheduling. A NoC with support to these cache related mechanisms can assist in improving systems performance by reducing the cache miss ratio. The presented multi-core system employs the Data-Driven Multithreading (DDM) model of execution. In DDM thread scheduling is done according to data availability, thus the system is aware of the threads to be executed in the near future. This characteristic of the DDM model allows for cache aware thread scheduling and cache prefetching. The NoC prototype is a crossbar switch with output buffering that can support a cache-aware 4-node chip multiprocessor. The prototype is built on the Xilinx ML506 board equipped with a Xilinx Virtex-5 FPGA.

Experiment list: SRX122496 [Chip-atlas[Archive

Lifescience Database Archive (English)

Full Text Available || chip antibody=Rel || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip ant...ibody catalog number 1=sc-71 || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2=sc

Smart vision chips: An overview

Science.gov (United States)

Koch, Christof

1994-01-01

This viewgraph presentation presents four working analog VLSI vision chips: (1) time-derivative retina, (2) zero-crossing chip, (3) resistive fuse, and (4) figure-ground chip; work in progress on computing motion and neuromorphic systems; and conceptual and practical lessons learned.

Experiment list: SRX122465 [Chip-atlas[Archive

Lifescience Database Archive (English)

Full Text Available 6 || chip antibody=Relb || treatment=LPS || time=120 min || chip antibody manufacturer 1=Bethyl || chip anti...body catalog number 1=A302-183A || chip antibody manufacturer 2=Santa Cruz || chip antibody catalog number 2

Direct measurement of lithium in whole blood using a glass chip with integrated conductivity detection for capillary electrophoresis

NARCIS (Netherlands)

Vrouwe, E.X.; Kölling, P.; Lüttge, Regina; van den Berg, Albert

2004-01-01

Introduction: At the present state of micro fluidic chip technology, it is now possible to combine sample treatment steps with separation methods on a single device. However, still few examples have been presented, which fully exploit combining multiple functionalities. We demonstrate here that the

Experiment list: SRX122555 [Chip-atlas[Archive

Lifescience Database Archive (English)

Full Text Available chip antibody=Stat1 || treatment=LPS || time=120 min || chip antibody manufacturer 1=Santa Cruz || chip anti...body catalog number 1=sc-346 || chip antibody manufacturer 2=Bethyl || chip antibody catalog number 2=A302-7

On-chip digital power supply control for system-on-chip applications

NARCIS (Netherlands)

Meijer, M.; Pineda de Gyvez, J.; Otten, R.H.J.M.

2005-01-01

The authors presented an on-chip, fully-digital, power-supply control system. The scheme consists of two independent control loops that regulate power supply variations due to semiconductor process spread, temperature, and chip's workload. Smart power-switches working as linear voltage regulators

All-optical tuning of EIT-like dielectric metasurfaces by means of chalcogenide phase change materials.

Science.gov (United States)

Petronijevic, E; Sibilia, C

2016-12-26

Electromagnetically induced transparency (EIT) is a pump-induced narrowband transparency window within an absorption line of the probe beam spectrum in an atomic system. In this paper we propose a way to bring together the all-dielectric metamaterials to have EIT-like effects and to optically tune the response by hybridizing them with a layer of a phase change material. We propose a design of the metamaterial based on Si nanoresonators that can support an EIT-like resonant response. On the top of the resonators we consider a thin layer of a chalcogenide phase change material, which we will use to tune the optical response. Our choice is Ge2Sb2Te5 (GST), since it has two stable phases at room temperature, namely amorphous and crystalline, between which it can be switched quickly, nonvolatively and reversibly, sustaining a large number of switching cycles. They differ in optical properties, while still having moderately low losses in telecom range. Since such dielectric resonators do not have non-radiative losses of metals around 1550nm, they can lead to a high-Q factor of the EIT-like response in this range. Firstly, we optimize the starting structure so that it gives an EIT-like response at 1550 nm when the GST layer is in the amorphous state. Our starting design uses glass as a substrate, but we also consider implementation in SOI technology. If we then switch the thin layer of GST to its crystalline phase, which has higher losses, the EIT-like response is red shifted, providing around 10:1 contrast at 1550nm. This reversible tuning can be done with an ns visible pulsed laser. We discuss the results of the simulation of the dielectric metasurface for different configurations and the tuning possibility.

Supply chains of forest chip production in Finland

Energy Technology Data Exchange (ETDEWEB)

Kaerhae, Kalle (Metsaeteho Oy, Helsinki (Finland)), e-mail: kalle.karha@metsateho.fi

2010-07-15

The Metsaeteho study investigated how logging residue chips, stump wood chips, and chips from small sized thinning wood and large-sized (rotten) roundwood used by heating and power plants were produced in Finland in 2008. Almost all the major forest chip suppliers in Finland were involved in the study. The total volume of forest chips supplied in 2008 by these suppliers was 6.5 TWh. The study was implemented by conducting an e-mail questionnaire survey and telephone interviews. Research data was collected in March-May 2009. The majority of the logging residue chips and chips from small-sized thinning wood were produced using the roadside chipping supply chain in Finland in 2008. The chipping at plant supply chain was also significant in the production of logging residue chips. 70% of all stump wood chips consumed were comminuted at the plant and 29% at terminals. The role of the terminal chipping supply chain was also significant in the production of chips from logging residues and small-sized wood chips. When producing chips from large-sized (rotten) roundwood, nearly a half of chips were comminuted at plants and more than 40% at terminals

Supply systems of forest chip production in Finland

Energy Technology Data Exchange (ETDEWEB)

Kaerhae, K. (Metsaeteho Oy, Helsinki (Finland)), e-mail: kalle.karha@metsateho.fi

2010-07-01

The Metsaeteho study investigated how logging residue chips, stump wood chips, and chips from small-diameter thinning wood and large-sized (rotten) roundwood used by heating and power plants were produced in Finland in 2009. Almost all the major forest chip suppliers in Finland were involved in the study. The total volume of forest chips supplied in 2009 by these suppliers was 8,4 TWh. The study was implemented by conducting an e-mail questionnaire survey and telephone interviews. Research data was collected from March-May, 2010. The majority of the logging residue chips and chips from small-diameter thinning wood were produced using the roadside chipping supply system in Finland in 2009. The chipping at plant supply system was also significant in the production of logging residue chips. Nearly 70 % of all stump wood chips consumed were comminuted at the plant and 28 % at terminals. The role of the terminal chipping supply system was also significant in the production of chips from logging residues and small-diameter wood chips. When producing chips from large-sized (rotten) roundwood, similarly roughly 70 % of chips were comminuted at plants and 23 % at terminals. (orig.)

Supply chains of forest chip production in Finland

Energy Technology Data Exchange (ETDEWEB)

Kaerhae, K. (Metsaeteho Oy, Helsinki (Finland)), Email: kalle.karha@metsateho.fi

2009-07-01

The Metsaeteho study investigated how logging residue chips. stump wood chips, and chips from small-sized thinning wood and large-sized (rotten) roundwood used by heating and power plants were produced in Finland in 2008. Almost all the major forest chip suppliers in Finland were involved in the study. The total volume of forest chips supplied in 2008 by these suppliers was 6,5 TWh. The study was implemented by conducting an e-mail questionnaire survey and telephone interviews. Research data was collected in March-May 2009. The majority of the logging residue chips and chips from small-sized thinning wood were produced using the roadside chipping supply chain in Finland in 2008. The chipping at plant supply chain was also significant in the production of logging residue chips. 70% of all stump wood chips consumed were comminuted at the plant and 29% at terminals. The role of the terminal chipping supply chain was also significant in the production of chips from logging residues and small-sized wood chips. When producing chips from large-sized (rotten) roundwood, nearly a half of chips were comminuted at plants and more than 40 % at terminals. (orig.)

Space-charge-limited conduction in Se 90 Sb 4 Ag 6 glassy alloy

Indian Academy of Sciences (India)

Keywords. Chalcogenide glasses; Meyer–Neldel rule; SCLC; pre-exponential factor. ... found to be field dependent. Pre-exponential factor is found to depend on the activation energy and obeys Meyer–Neldel rule. ... Current Issue Volume 41 ...

Synchrotron radiation photoelectron spectroscopy studies of self-organization in As.sub.40./sub.Se.sub.60./sub. nanolayers stored under ambient conditions and after laser irradiation

Czech Academy of Sciences Publication Activity Database

Kondrat, O.; Popovich, N.; Holomb, R.; Mitsa, V.; Lyamayev, V.; Tsud, N.; Cháb, Vladimír; Matolín, V.; Prince, K. C.

2012-01-01

Roč. 358, č. 21 (2012), s. 2910-2916 ISSN 0022-3093 Institutional support: RVO:68378271 Keywords : chalcogenide glass * photostructural changes * photoelectron spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012

Single chip camera active pixel sensor

Science.gov (United States)

Shaw, Timothy (Inventor); Pain, Bedabrata (Inventor); Olson, Brita (Inventor); Nixon, Robert H. (Inventor); Fossum, Eric R. (Inventor); Panicacci, Roger A. (Inventor); Mansoorian, Barmak (Inventor)

2003-01-01

A totally digital single chip camera includes communications to operate most of its structure in serial communication mode. The digital single chip camera include a D/A converter for converting an input digital word into an analog reference signal. The chip includes all of the necessary circuitry for operating the chip using a single pin.

Ultra-thin chip technology and applications

CERN Document Server

2010-01-01

Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

An economic evaluation of a chlorhexidine chip for treating chronic periodontitis: the CHIP (chlorhexidine in periodontitis) study.

Science.gov (United States)

Henke, C J; Villa, K F; Aichelmann-Reidy, M E; Armitage, G C; Eber, R M; Genco, R J; Killoy, W J; Miller, D P; Page, R C; Polson, A M; Ryder, M I; Silva, S J; Somerman, M J; Van Dyke, T E; Wolff, L F; Evans, C J; Finkelman, R D

2001-11-01

The authors previously suggested that an adjunctive, controlled-release chlorhexidine, or CHX, chip may reduce periodontal surgical needs at little additional cost. This article presents an economic analysis of the CHX chip in general dental practice. In a one-year prospective clinical trial, 484 chronic periodontitis patients in 52 general practices across the United States were treated with either scaling and root planing, or SRP, plus any therapy prescribed by treating, unblinded dentists; or SRP plus other therapy as above but including the CHX chip. Economic data were collected from bills, case report forms and 12-month treatment recommendations from blinded periodontist evaluators. Total dental charges were higher for SRP + CHX chip patients vs. SRP patients when CHX chip costs were included (P = .027) but lower when CHX chip costs were excluded (P = .012). About one-half of the CHX chip acquisition cost was offset by savings in other charges. SRP + CHX chip patients were about 50 percent less likely to undergo surgical procedures than were SRP patients (P = .021). At the end of the trial, periodontist evaluators recommended similar additional procedures for both groups: SRP, about 46 percent; maintenance, about 37 percent; surgery, 56 percent for SRP alone and 63 percent for SRP + CHX chip. Adjunctive CHX chip use for general-practice patients with periodontitis increased costs but reduced surgeries over one year. At study's end, periodontists recommended similar additional surgical treatment for both groups. In general practice, routine use of the CHX chip suggests that costs will be partially offset by reduced surgery over at least one year.

Photonic network-on-chip design

CERN Document Server

Bergman, Keren; Biberman, Aleksandr; Chan, Johnnie; Hendry, Gilbert

2013-01-01

This book provides a comprehensive synthesis of the theory and practice of photonic devices for networks-on-chip. It outlines the issues in designing photonic network-on-chip architectures for future many-core high performance chip multiprocessors. The discussion is built from the bottom up: starting with the design and implementation of key photonic devices and building blocks, reviewing networking and network-on-chip theory and existing research, and finishing with describing various architectures, their characteristics, and the impact they will have on a computing system. After acquainting

Solid state silicon based condenser microphone for hearing aid, has transducer chip and IC chip between intermediate chip and openings on both sides of intermediate chip, to allow sound towards diaphragm

DEFF Research Database (Denmark)

2000-01-01

towards diaphragm. Surface of the chip (2) has electrical conductors (14) to connect chip with IC chip (3). USE - For use in miniature electroacoustic devices such as hearing aid. ADVANTAGE - Since sound inlet is covered by filter, dust, moisture and other impurities do not obstruct interior and sound...... inlet of microphone. External electrical connection can be made economically reliable and the thermal stress is avoided with the small size solid state silicon based condenser microphone....

Experiment list: SRX214086 [Chip-atlas[Archive

Lifescience Database Archive (English)

Full Text Available entiated || cell line=KH2 || chip antibody 1=none || chip antibody manufacturer 1=none || chip antibody 2=none || chip antibody manuf...acturer 2=none http://dbarchive.biosciencedbc.jp/kyushu-

Optical lattice on an atom chip

DEFF Research Database (Denmark)

Gallego, D.; Hofferberth, S.; Schumm, Thorsten

2009-01-01

Optical dipole traps and atom chips are two very powerful tools for the quantum manipulation of neutral atoms. We demonstrate that both methods can be combined by creating an optical lattice potential on an atom chip. A red-detuned laser beam is retroreflected using the atom chip surface as a high......-quality mirror, generating a vertical array of purely optical oblate traps. We transfer thermal atoms from the chip into the lattice and observe cooling into the two-dimensional regime. Using a chip-generated Bose-Einstein condensate, we demonstrate coherent Bloch oscillations in the lattice....

Origin of structural analogies and differences between the atomic structures of GeSe{sub 4} and GeS{sub 4} glasses: A first principles study

Energy Technology Data Exchange (ETDEWEB)

Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo [Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg and CNRS UMR 7504, 23 rue du Loess, BP43, F-67034 Strasbourg Cedex 2 (France)

2015-07-21

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe{sub 4} and GeS{sub 4}. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge–Se–Se connections are more frequent than the corresponding Ge–S–S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS{sub 4} is rationalized in terms of a higher number of large size rings, accounting for extended Ge–Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge–S bonds when compared to Ge–Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

DWPF GLASS BEADS AND GLASS FRIT TRANSPORT DEMONSTRATION

Energy Technology Data Exchange (ETDEWEB)

Adamson, D; Bradley Pickenheim, B

2008-11-24

DWPF is considering replacing irregularly shaped glass frit with spherical glass beads in the Slurry Mix Evaporator (SME) process to decrease the yield stress of the melter feed (a non-Newtonian Bingham Plastic). Pilot-scale testing was conducted on spherical glass beads and glass frit to determine how well the glass beads would transfer when compared to the glass frit. Process Engineering Development designed and constructed the test apparatus to aid in the understanding and impacts that spherical glass beads may have on the existing DWPF Frit Transfer System. Testing was conducted to determine if the lines would plug with the glass beads and the glass frit slurry and what is required to unplug the lines. The flow loop consisted of vertical and horizontal runs of clear PVC piping, similar in geometry to the existing system. Two different batches of glass slurry were tested: a batch of 50 wt% spherical glass beads and a batch of 50 wt% glass frit in process water. No chemicals such as formic acid was used in slurry, only water and glass formers. The glass beads used for this testing were commercially available borosilicate glass of mesh size -100+200. The glass frit was Frit 418 obtained from DWPF and is nominally -45+200 mesh. The spherical glass beads did not have a negative impact on the frit transfer system. The transferring of the spherical glass beads was much easier than the glass frit. It was difficult to create a plug with glass bead slurry in the pilot transfer system. When a small plug occurred from setting overnight with the spherical glass beads, the plug was easy to displace using only the pump. In the case of creating a man made plug in a vertical line, by filling the line with spherical glass beads and allowing the slurry to settle for days, the plug was easy to remove by using flush water. The glass frit proved to be much more difficult to transfer when compared to the spherical glass beads. The glass frit impacted the transfer system to the point

DWPF GLASS BEADS AND GLASS FRIT TRANSPORT DEMONSTRATION

International Nuclear Information System (INIS)

Adamson, D.; Pickenheim, Bradley

2008-01-01

DWPF is considering replacing irregularly shaped glass frit with spherical glass beads in the Slurry Mix Evaporator (SME) process to decrease the yield stress of the melter feed (a non-Newtonian Bingham Plastic). Pilot-scale testing was conducted on spherical glass beads and glass frit to determine how well the glass beads would transfer when compared to the glass frit. Process Engineering Development designed and constructed the test apparatus to aid in the understanding and impacts that spherical glass beads may have on the existing DWPF Frit Transfer System. Testing was conducted to determine if the lines would plug with the glass beads and the glass frit slurry and what is required to unplug the lines. The flow loop consisted of vertical and horizontal runs of clear PVC piping, similar in geometry to the existing system. Two different batches of glass slurry were tested: a batch of 50 wt% spherical glass beads and a batch of 50 wt% glass frit in process water. No chemicals such as formic acid was used in slurry, only water and glass formers. The glass beads used for this testing were commercially available borosilicate glass of mesh size -100+200. The glass frit was Frit 418 obtained from DWPF and is nominally -45+200 mesh. The spherical glass beads did not have a negative impact on the frit transfer system. The transferring of the spherical glass beads was much easier than the glass frit. It was difficult to create a plug with glass bead slurry in the pilot transfer system. When a small plug occurred from setting overnight with the spherical glass beads, the plug was easy to displace using only the pump. In the case of creating a man made plug in a vertical line, by filling the line with spherical glass beads and allowing the slurry to settle for days, the plug was easy to remove by using flush water. The glass frit proved to be much more difficult to transfer when compared to the spherical glass beads. The glass frit impacted the transfer system to the point

Effect of different glasses in glass bonded zeolite

International Nuclear Information System (INIS)

Lewis, M.A.; Ackerman, J.P.; Verma, S.

1995-01-01

A mineral waste form has been developed for chloride waste salt generated during the pyrochemical treatment of spent nuclear fuel. The waste form consists of salt-occluded zeolite powders bound within a glass matrix. The zeolite contains the salt and immobilizes the fission products. The zeolite powders are hot pressed to form a mechanically stable, durable glass bonded zeolite. Further development of glass bonded zeolite as a waste form requires an understanding of the interaction between the glass and the zeolite. Properties of the glass that enhance binding and durability of the glass bonded zeolite need to be identified. Three types of glass, boroaluminosilicate, soda-lime silicate, and high silica glasses, have a range of properties and are now being investigated. Each glass was hot pressed by itself and with an equal amount of zeolite. MCC-1 leach tests were run on both. Soda-lime silicate and high silica glasses did not give a durable glass bonded zeolite. Boroaluminosilicate glasses rich in alkaline earths did bind the zeolite and gave a durable glass bonded zeolite. Scanning electron micrographs suggest that the boroaluminosilicate glasses wetted the zeolite powders better than the other glasses. Development of the glass bonded zeolite as a waste form for chloride waste salt is continuing

Experiment list: SRX214071 [Chip-atlas[Archive

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Experiment list: SRX214075 [Chip-atlas[Archive

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Full Text Available age=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

Experiment list: SRX214074 [Chip-atlas[Archive

Lifescience Database Archive (English)

Full Text Available ge=Undifferentiated || treatment=Overexpress Sox17EK-V5 tagged || cell line=KH2 || chip antibody 1=none || chip antibody manufacture...r 1=none || chip antibody 2=V5 || chip antibody manufacture

Experiment list: SRX214072 [Chip-atlas[Archive