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Sample records for chalcogenide alloy hgse

  1. A structural study of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure

    CERN Document Server

    Kozlenko, D P; Hull, S; Knorr, K; Savenko, B N; Shchennikov, V V; Voronin, V I

    2002-01-01

    The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e sub 4. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

  2. The pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure: a mechanism for the zinc blende to cinnabar reconstructive phase transition

    CERN Document Server

    Kozlenko, D P; Ehm, L; Hull, S; Savenko, B N; Shchennikov, V V; Voronin, V I

    2003-01-01

    The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by x-ray and neutron powder diffraction at pressures up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. A phenomenological model of this reconstructive phase transition based on a displacement mechanism is proposed. Analysis of the geometrical relationship between the zinc blende and the cinnabar phases has shown that the possible order parameter for the zinc blende-cinnabar structural transformation is the spontaneous strain e sub 4. This assignment agrees with the previously observed high pressure behaviour of the elastic constants of some mercury chalcogenides.

  3. Neutron diffraction study of structural transformations in ternary systems of HgSe sub 1 sub - sub x S sub x mercury chalcogenides at high pressure

    CERN Document Server

    Voronin, V I; Berger, I F; Glazkov, V P; Kozlenko, D P; Savenko, B N; Tikhomirov, S V

    2001-01-01

    The structure of the ternary systems of the HgSe sub 1 sub - sub x S sub x mercury chalcogenides is studied at high pressures up to 35 kbar. It is established that by increase in the pressure in the HgSe sub 1 sub - sub x S sub x there takes place the transition from the sphalerite type cubic structure to the cinnabar type hexagonal structure, which is accompanied by the jump-like change in the elementary cell volume and interatomic distances. The parameters of the elementary cell and positional parameters of the Hg and Se/S for the hexagonal phase of high pressure are determined. The existence of the two-phase state in the area of the phase transformation is determined

  4. Alloyed copper chalcogenide nanoplatelets via partial cation exchange reactions.

    Science.gov (United States)

    Lesnyak, Vladimir; George, Chandramohan; Genovese, Alessandro; Prato, Mirko; Casu, Alberto; Ayyappan, S; Scarpellini, Alice; Manna, Liberato

    2014-08-26

    We report the synthesis of alloyed quaternary and quinary nanocrystals based on copper chalcogenides, namely, copper zinc selenide-sulfide (CZSeS), copper tin selenide-sulfide (CTSeS), and copper zinc tin selenide-sulfide (CZTSeS) nanoplatelets (NPLs) (∼20 nm wide) with tunable chemical composition. Our synthesis scheme consisted of two facile steps: i.e., the preparation of copper selenide-sulfide (Cu2-xSeyS1-y) platelet shaped nanocrystals via the colloidal route, followed by an in situ cation exchange reaction. During the latter step, the cation exchange proceeded through a partial replacement of copper ions by zinc or/and tin cations, yielding homogeneously alloyed nanocrystals with platelet shape. Overall, the chemical composition of the alloyed nanocrystals can easily be controlled by the amount of precursors that contain cations of interest (e.g., Zn, Sn) to be incorporated/alloyed. We have also optimized the reaction conditions that allow a complete preservation of the size, morphology, and crystal structure as that of the starting Cu2-xSeyS1-y NPLs. The alloyed NPLs were characterized by optical spectroscopy (UV-vis-NIR) and cyclic voltammetry (CV), which demonstrated tunability of their light absorption characteristics as well as their electrochemical band gaps.

  5. Analysis of switching conditions of chalcogenide alloys during crystallization

    Institute of Scientific and Technical Information of China (English)

    Wanhua Yu; C.D. Wright

    2006-01-01

    To understand the principle and limitation of chalcogenide alloy Ge2Sb2Te5 (GST) in solid-state memory devices during crystallization, it was necessary to develop a physically realistic model that could reflect the electrical and thermal properties of these media. A novel comprehensive numerical model has been developed for simulating these memory devices, which describes the electrical and thermal behavior using the solution of the nonlinear, time-dependent electrical and heat conduction equation. The finite-difference-time-domain technique was adopted to compute the electrical field and heat distribution in the device. Several contributing factors that affect the crystallization switching process such as the geometry of the GST layer, temperature and electric field dependency of the electrical conductivity have been discussed. The results of the simulations were then used to provide critical guidelines for fabrication and optimization of the device performance.

  6. Thermal and Electrical Conductivity of Ge1Sb4Te7 Chalcogenide Alloy

    Science.gov (United States)

    Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

    2017-02-01

    The unique properties of the Ge1Sb4Te7 alloy as a chalcogenide make it a good candidate for application in phase-change random access memory as well as thermoelectric materials. The thermal and electrical conductivity of the Ge1Sb4Te7 alloy play an important role in both applications. This work aims to determine the thermal conductivity and electrical resistivity of the Ge1Sb4Te7 alloy as a function of temperature and to discuss the thermal conduction mechanism. Thermal conductivity and electrical resistivity were measured from room temperature to 778 K using the hot strip method and the four-terminal method, respectively. The thermal conductivity of the Ge1Sb4Te7 alloy shows an interesting temperature dependence: it decreases up to about 600 K, and then increases with increasing temperature. The electrical resistivity shows a monotonic increase with increasing temperature. Through a discussion of the thermal conductivity results together with electrical resistivity results, it is proposed that electronic thermal conductivity dominates the thermal conductivity, while the bipolar diffusion contributes to the increase in the thermal conductivity at higher temperatures. The resonance bonding existing in this chalcogenide alloy accounts for the low lattice thermal conductivity.

  7. Growth and Characterization of Multisegment Chalcogenide Alloy Nanostructures for Photonic Applications in a Wide Spectral Range

    Science.gov (United States)

    Turkdogan, Sunay

    In this dissertation, I described my research on the growth and characterization of various nanostructures, such as nanowires, nanobelts and nanosheets, of different semiconductors in a Chemical Vapor Deposition (CVD) system. In the first part of my research, I selected chalcogenides (such as CdS and CdSe) for a comprehensive study in growing two-segment axial nanowires and radial nanobelts/sheets using the ternary CdSxSe1-x alloys. I demonstrated simultaneous red (from CdSe-rich) and green (from CdS-rich) light emission from a single monolithic heterostructure with a maximum wavelength separation of 160 nm. I also demonstrated the first simultaneous two-color lasing from a single nanosheet heterostructure with a wavelength separation of 91 nm under sufficiently strong pumping power. In the second part, I considered several combinations of source materials with different growth methods in order to extend the spectral coverage of previously demonstrated structures towards shorter wavelengths to achieve full-color emissions. I achieved this with the growth of multisegment heterostructure nanosheets (MSHNs), using ZnS and CdSe chalcogenides, via our novel growth method. By utilizing this method, I demonstrated the first growth of ZnCdSSe MSHNs with an overall lattice mismatch of 6.6%, emitting red, green and blue light simultaneously, in a single furnace run using a simple CVD system. The key to this growth method is the dual ion exchange process which converts nanosheets rich in CdSe to nanosheets rich in ZnS, demonstrated for the first time in this work. Tri-chromatic white light emission with different correlated color temperature values was achieved under different growth conditions. We demonstrated multicolor (191 nm total wavelength separation) laser from a single monolithic semiconductor nanostructure for the first time. Due to the difficulties associated with growing semiconductor materials of differing composition on a given substrate using traditional planar

  8. Spin dynamics of complex oxides, bismuth-antimony alloys, and bismuth chalcogenides

    Science.gov (United States)

    Sahin, Cuneyt

    V, suggesting the potential for doping or voltage tuned spin Hall current. We have also calculated intrinsic spin Hall conductivities of bismuth selenide and bismuth telluride topological insulators from an effective tight-binding Hamiltonian including two nearest-neighbor interactions. We showed that both materials exhibit giant spin Hall conductivities calculated from the Kubo formula in linear response theory and the clean static limit. We conclude that bismuth-antimony alloys and bismuth chalcogenides are primary candidates for efficiently generating spin currents through the spin Hall effect.

  9. Methods of thermoelectric enhancement in silicon-germanium alloy type I clathrates and in nanostructured lead chalcogenides

    Science.gov (United States)

    Martin, Joshua

    The rapid increase in thermoelectric (TE) materials R&D is a consequence of the growing need to increase energy efficiency and independence through waste heat recovery. TE materials enable the direct solid-state conversion of heat into electricity, with little maintenance, noise, or cost. In addition, these compact devices can be incorporated into existing technologies to increase the overall operating efficiency. High efficiency TE materials would enable the practical solid-state conversion of thermal to electrical energy. Optimizing the interdependent physical parameters to achieve acceptable efficiencies requires materials exhibiting a unique combination of properties. This research reports two methods of thermoelectric enhancement: lattice strain effects in silicon-germanium alloy type I clathrates and the nanostructured enhancement of lead chalcogenides. The synthesis and chemical, structural, and transport properties characterization of Ba8Ga16SixGe30-x type I clathrates with similar Ga-to-group IV element ratios but with increasing Si substitution (4 materials were then further optimized by adjusting the Ga-to-group IV element ratios. Recent progress in a number of higher efficiency TE materials can be attributed to nanoscale enhancement. Many of these materials demonstrate increased Seebeck coefficient and decreased thermal conductivity due to the phenomenological properties of nanometer length scales. To satisfy the demands of bulk industrial applications requires additional synthesis techniques to incorporate nanostructure directly within a bulk matrix. This research investigates, for the first time, dense dimensional nanocomposites prepared by densifying nanocrystals synthesized employing a solution-phase reaction. Furthermore, the carrier concentration of the PbTe nanocomposites can be adjusted by directly doping the nanocrystals, necessary for power factor optimization. These materials were fully characterized using a low temperature TE transport

  10. Structure and Optical Properties of Polycrystalline InxSb30 – xSe70 (0 ≤ x ≤ 25 Chalcogenide Alloys

    Directory of Open Access Journals (Sweden)

    Shaveta Sharma

    2016-06-01

    Full Text Available The spectroscopic studies of various physical properties of glassy and polycrystalline chalcogenide alloys are important due to their importance as active materials in various solid state devices. The composition dependence of these properties are explained on the basis of coordination number, but the splitting of this effect from the nature of additive is imperative for furthering the understanding of these systems. In the present work, the structural and spectroscopic investigations of melt quenched bulk In-Sb-Se chalcogenide alloys have been studied by XRD, RAMAN and optical spectroscopic techniques. The XRD study reveals the polycrystalline nature of the samples. The composition was analysed using the energy dispersive X-ray spectroscopy technique. The XRD study reveals the crystallization of Sb2Se3 and β-In2Se3 phases while the increase in the intensity for β-In2Se3 phase has been observed with the increase in indium content. The RAMAN spectra also reveal the formation of chalcogenide based Sb and In structural units. The diffused reflectance spectrum was used to calculate the optical absorption in 800-1500 nm spectral region and used to study the composition dependence of the optical gap in these samples. The results have been discussed in conjunction with the heterogeneous phases; density of defect states; electronegativity and average mean bond energy for these polycrystalline alloys.

  11. Excitation spectra and ground-state properties from density functional theory for the inverted band-structure systems $\\beta$-HgS, HgSe, and HgTe

    CERN Document Server

    Delin, A

    2002-01-01

    We have performed a systematic density-functional study of the mercury chalcogenide compounds $\\beta$-HgS, HgSe, and HgTe using an all-electron full-potential linear muffin-tin orbital (FP-LMTO) method. We find that, in the zinc-blende structure, both HgSe and HgTe are semimetals whereas $\\beta$-HgS has a small spin-orbit induced band gap. Our calculated relativistic photoemission and inverse photoemission spectra (PES and IPES, respectively) reproduce very well the most recently measured spectra, as do also our theoretical optical spectra. In contrast to the normal situation, we find that the local density approximation (LDA) to the density functional gives calculated equilibrium volumes in much better agreement with experiment than does the generalized gradient corrected functional (GGA). We also address the problem of treating relativistic $p$ electrons with methods based on a scalar-relativistic basis set, and show that the effect is rather small for the present systems.

  12. Chemical bond approach to optical properties of some flash evaporated Se100-XSbX chalcogenide alloys

    Science.gov (United States)

    Muiva, C. M.; Sathiaraj, T. S.; Mwabora, J. M.

    2012-07-01

    Amorphous thin films of Se100 - XSbX (X = 1, 5, 10, 15 and 20) were synthesized by flash evaporation of the premelt quenched bulk samples. The optical properties were investigated from spectrophotometric measurements in the UV-VIS-NIR spectral region using Swanepoel's standard envelope method and related techniques. The optical band gap energy (Egopt) was evaluated from the Wemple-Didomenico (WDD) single oscillator model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Egopt and oscillator energy Eo were found to decrease monotonously with increasing Sb additive. The complex dielectric constant (ɛ), Urbach energy (Eu), optical conductivity (σ), plasma frequency (ωp) and lattice dielectric constant (ɛL) were deduced for each alloy composition. The complex refractive index (n) fitted well to Sellmeier function which can allow extrapolation of n outside the measured spectral range. The observed changes in optical parameters with Sb content were explained on the basis of increased defect states and changes in cohesive energy indicators (average heat of atomization (Hs), mean coordination number and average single bond energy (Hs/).

  13. Chalcogenide Fibre Displacement Sensor

    Science.gov (United States)

    2001-06-01

    Fibre optic technology offers the possibility for developing of a variety of physical sensors for a wide range of physical parameters. The main...integrating sphere. The use of chalcogenide rather quartz fibre optic highly increases the Sensitivity of the sensor. Experimental set-up, transmission characteristics and technical parameters are presented.

  14. In vivo formation of natural HgSe nanoparticles in the liver and brain of pilot whales

    Science.gov (United States)

    To understand the biochemistry of methylmercury (MeHg) that leads to the formation of mercury-selenium (Hg-Se) clusters is a long outstanding challenge that promises to deepen our knowledge of MeHg detoxification and the role SE plays in this process. Here, we show that mercury ...

  15. Chalcogenide perovskites for photovoltaics.

    Science.gov (United States)

    Sun, Yi-Yang; Agiorgousis, Michael L; Zhang, Peihong; Zhang, Shengbai

    2015-01-14

    Chalcogenide perovskites are proposed for photovoltaic applications. The predicted band gaps of CaTiS3, BaZrS3, CaZrSe3, and CaHfSe3 with the distorted perovskite structure are within the optimal range for making single-junction solar cells. The predicted optical absorption properties of these materials are superior compared with other high-efficiency solar-cell materials. Possible replacement of the alkaline-earth cations by molecular cations, e.g., (NH3NH3)(2+), as in the organic-inorganic halide perovskites (e.g., CH3NH3PbI3), are also proposed and found to be stable. The chalcogenide perovskites provide promising candidates for addressing the challenging issues regarding halide perovskites such as instability in the presence of moisture and containing the toxic element Pb.

  16. Chalcogenide Glass for Passive Infrared Applications

    Institute of Scientific and Technical Information of China (English)

    Xianghua Zhang; Hongli Ma; Jacques Lucas

    2003-01-01

    Chalcogenide glass fibers have been successfully used for remote spectroscopy, temperature sensing and CO2 laser power delivery. In bulk form, chalcogenide glass is the most promising candidate for replacing the expensive germanium lenses for thermal imaging.

  17. Chalcogenide glass hollow core microstructured optical fibers

    Science.gov (United States)

    Shiryaev, Vladimir S.

    2015-03-01

    The recent developments on chalcogenide glass hollow core microstructured optical fibers (HC-MOFs) are presented. The comparative analysis of simulated optical properties for chalcogenide HC-MOFs of negative-curvature with different size and number of capillaries is given. The technique for the manufacture of microstructured chalcogenide preforms, which includes the assembly of the substrate glass tube and 8-10 capillaries, is described. Further trends to improve the optical transmission in chalcogenide NCHCFs are considered.

  18. Superconductivity in Fe-chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.C.; Chen, T.K. [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Lee, W.C. [Department of Physics, Applied Physics, and Astronomy, Binghamton University – SUNY (United States); Lin, P.H. [National Synchrotron Research Center, Hsinchu, Taiwan (China); Wang, M.J. [Institute of Astrophysics and Astronomy, Academia Sinica, Taipei, Taiwan (China); Wen, Y.C. [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Wu, P.M. [Deparment of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA (United States); Wu, M.K., E-mail: mkwu@mail.ndhu.edu.tw [Institute of Physics, Academia Sinica, Taipei, Taiwan (China); National Donghwa University, Hualien, Taiwan (China)

    2015-07-15

    FeSe, which has the simplest crystal structure among the Fe based superconductors, and related chalcogenide superconductors are ideal candidates for investigating the detailed mechanism of the iron-based superconductors. Here, we summarize recent studies on the Fe-chalcogenides, with the goal to address some unresolved questions such as what is the influence of chemical stoichiometry on the phase diagram, what is the exact parent phase of FeSe system, and why can T{sub c}s be so dramatically enhanced in FeSe based superconductors? Recent developments in novel synthesis to prepare chalcogenide crystals, nano-materials and thin films allow the community to begin to address these issues. Then we review physical properties of the Fe chalcogenides, specifically focusing on optical properties, scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy (ARPES) results. These measurements along with recent theories provide a framework for better understanding the origin of superconductivity in FeSe and Fe-chalcogenides.

  19. In vivo formation of natural HgSe nanoparticles in the liver and brain of pilot whales

    Science.gov (United States)

    Gajdosechova, Zuzana; Lawan, Mohammed M.; Urgast, Dagmar S.; Raab, Andrea; Scheckel, Kirk G.; Lombi, Enzo; Kopittke, Peter M.; Loeschner, Katrin; Larsen, Erik H.; Woods, Glenn; Brownlow, Andrew; Read, Fiona L.; Feldmann, Jörg; Krupp, Eva M.

    2016-09-01

    To understand the biochemistry of methylmercury (MeHg) that leads to the formation of mercury-selenium (Hg-Se) clusters is a long outstanding challenge that promises to deepen our knowledge of MeHg detoxification and the role Se plays in this process. Here, we show that mercury selenide (HgSe) nanoparticles in the liver and brain of long-finned pilot whales are attached to Se-rich structures and possibly act as a nucleation point for the formation of large Se-Hg clusters, which can grow with age to over 5 μm in size. The detoxification mechanism is fully developed from the early age of the animals, with particulate Hg found already in juvenile tissues. As a consequence of MeHg detoxification, Se-methionine, the selenium pool in the system is depleted in the efforts to maintain essential levels of Se-cysteine. This study provides evidence of so far unreported depletion of the bioavailable Se pool, a plausible driving mechanism of demonstrated neurotoxic effects of MeHg in the organism affected by its high dietary intake.

  20. In vivo formation of natural HgSe nanoparticles in the liver and brain of pilot whales

    Science.gov (United States)

    Gajdosechova, Zuzana; Lawan, Mohammed M.; Urgast, Dagmar S.; Raab, Andrea; Scheckel, Kirk G.; Lombi, Enzo; Kopittke, Peter M.; Loeschner, Katrin; Larsen, Erik H.; Woods, Glenn; Brownlow, Andrew; Read, Fiona L.; Feldmann, Jörg; Krupp, Eva M.

    2016-01-01

    To understand the biochemistry of methylmercury (MeHg) that leads to the formation of mercury-selenium (Hg-Se) clusters is a long outstanding challenge that promises to deepen our knowledge of MeHg detoxification and the role Se plays in this process. Here, we show that mercury selenide (HgSe) nanoparticles in the liver and brain of long-finned pilot whales are attached to Se-rich structures and possibly act as a nucleation point for the formation of large Se-Hg clusters, which can grow with age to over 5 μm in size. The detoxification mechanism is fully developed from the early age of the animals, with particulate Hg found already in juvenile tissues. As a consequence of MeHg detoxification, Se-methionine, the selenium pool in the system is depleted in the efforts to maintain essential levels of Se-cysteine. This study provides evidence of so far unreported depletion of the bioavailable Se pool, a plausible driving mechanism of demonstrated neurotoxic effects of MeHg in the organism affected by its high dietary intake. PMID:27678068

  1. Evidence of contact epitaxy in the self-assembly of HgSe nanocrystals formed at a liquid-liquid interface.

    Science.gov (United States)

    Maiti, Santanu; Sanyal, Milan K; Jana, Manoj K; Runge, Benjamin; Murphy, Bridget M; Biswas, Kanishka; Rao, C N R

    2017-03-08

    The grazing incidence x-ray scattering results presented here show that the self-assembly process of HgSe nanocrystals formed at a liquid-liquid interface is quite different along the in-plane direction and across the interface. In situ x-ray reflectivity and ex situ microscopy measurements suggest quantized out-of-plane growth for HgSe nanoparticles of a size of about [Formula: see text] nm initially. Grazing incidence small-angle x-ray scattering measurements for films transferred from the water-toluene interface at various stages of reaction show that these nanoparticles first form random clusters with an average radius of 2.2 nm, giving rise to equally spaced rings of several orders. Finally, these clusters self-organize into face-centered cubic superstructures, giving sharp x-ray diffraction peaks oriented normal to the liquid-liquid interface with more than 100 nm-coherent domains. We also observed the x-ray diffraction pattern of the HgSe crystalline phase, with the superlattice peaks in these grazing incidence measurements of the transferred films. The electron microscopy and atomic force microscopy results support the x-ray observation of the self-organization of HgSe nanocrystals into close-packed superlattices. These results show that capillary wave fluctuation promotes the oriented attachment of clusters at the liquid-liquid interface, giving direct experimental evidence of contact epitaxy.

  2. Noble-Metal Chalcogenide Nanotubes

    Directory of Open Access Journals (Sweden)

    Nourdine Zibouche

    2014-10-01

    Full Text Available We explore the stability and the electronic properties of hypothetical noble-metal chalcogenide nanotubes PtS2, PtSe2, PdS2 and PdSe2 by means of density functional theory calculations. Our findings show that the strain energy decreases inverse quadratically with the tube diameter, as is typical for other nanotubes. Moreover, the strain energy is independent of the tube chirality and converges towards the same value for large diameters. The band-structure calculations show that all noble-metal chalcogenide nanotubes are indirect band gap semiconductors. The corresponding band gaps increase with the nanotube diameter rapidly approaching the respective pristine 2D monolayer limit.

  3. Nonlinear Integrated Optical Waveguides in Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    Yinlan; Ruan; Barry; Luther-Davies; Weitang; Li; Andrei; Rode; Marek; Samoc

    2003-01-01

    This paper reports on the study and measurement of the third order optical nonlinearity in bulk sulfide-based chalcogenide glasses; The fabrication process of the ultrafast laser deposited As-S-(Se)-based chalcogenide films and optical waveguides using two techniques: wet chemistry etching and plasma etching.

  4. Method to synthesize metal chalcogenide monolayer nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Sanchez, Bernadette A.; Boyle, Timothy J.

    2016-12-13

    Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes.

  5. Metastable states in amorphous chalcogenide semiconductors

    CERN Document Server

    Mikla, Victor I

    2009-01-01

    This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

  6. Metal chalcogenide nanostructures for renewable energy applications

    CERN Document Server

    Qurashi, Ahsanulhaq

    2014-01-01

    This first ever reference book that focuses on metal chalcogenide semiconductor nanostructures for renewable energy applications encapsulates the state-of-the-art in multidisciplinary research on the metal chalcogenide semiconductor nanostructures (nanocrystals, nanoparticles, nanorods, nanowires,  nanobelts, nanoflowers, nanoribbons and more).  The properties and synthesis of a class of nanomaterials is essential to renewable energy manufacturing and this book focuses on the synthesis of metal chalcogendie nanostructures, their growth mechanism, optical, electrical, and other important prop

  7. Electrical conduction mechanism in GeSeSb chalcogenide glasses

    Indian Academy of Sciences (India)

    Vandana Kumari; Anusaiya Kaswan; D Patidar; Kananbala Sharma; N S Saxena

    2016-02-01

    Electrical conductivity of chalcogenide glassy system Ge$_{30−x}$Se$_{70}$Sb$_{x}$ ( = 10, 15, 20 and 25) prepared by melt quenching has been determined at different temperatures in bulk through the $I$–$V$ characteristic curves. It is quite evident from results that Poole–Frenkel conduction mechanisms hold good for conduction in these glasses in a given temperature range. The variation in electrical conductivity with composition was attributed to the Se–Sb bond concentration in the Se–Ge–Sb system. Results indicated that Ge$_5$Se$_{70}$Sb$_{25}$ showed the minimum resistance. In view of this the composition Ge$_5$Se$_{70}$Sb$_{25}$ may be coined as ‘critical composition’ in the proposed series. Also the activation energies of conduction of these glassy alloys have been calculated in higher and lower temperature range using the Arrhenius equation.

  8. Phase transformation in Pb:GeSbTe chalcogenide films

    Science.gov (United States)

    Kumar, J.; Kumar, P.; Ahmad, M.; Chander, R.; Thangaraj, R.; Sathiaraj, T. S.

    2008-11-01

    A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.

  9. Alloy

    Science.gov (United States)

    Cabeza, Sandra; Garcés, Gerardo; Pérez, Pablo; Adeva, Paloma

    2014-07-01

    The Mg98.5Gd1Zn0.5 alloy produced by a powder metallurgy route was studied and compared with the same alloy produced by extrusion of ingots. Atomized powders were cold compacted and extruded at 623 K and 673 K (350 °C and 400 °C). The microstructure of extruded materials was characterized by α-Mg grains, and Mg3Gd and 14H-LPSO particles located at grain boundaries. Grain size decreased from 6.8 μm in the extruded ingot, down to 1.6 μm for powders extruded at 623 K (350 °C). Grain refinement resulted in an increase in mechanical properties at room and high temperatures. Moreover, at high temperatures the PM alloy showed superplasticity at high strain rates, with elongations to failure up to 700 pct.

  10. Chalcogenide Nanoionic-based Radio Frequency Switch

    Science.gov (United States)

    Nessel, James (Inventor); Lee, Richard (Inventor)

    2013-01-01

    A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.

  11. Multimode supercontinuum generation in chalcogenide glass fibres

    DEFF Research Database (Denmark)

    Kubat, Irnis; Bang, Ole

    2016-01-01

    Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single...

  12. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Science.gov (United States)

    Lee, Seung-Yun; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung

    2007-10-01

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  13. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2007-10-31

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  14. Ultra-precision molding of chalcogenide glass aspherical lens

    Science.gov (United States)

    Zhang, Feng; Wang, Zhibin; Zhang, Yunlong; Su, Ying; Guo, Rui; Xu, Zengqi; Liu, Xuanmin

    2016-10-01

    With the development of infrared optical systems in military and civil areas, chalcogenide glass aspherical lens possess some advantages, such as large infrared transmission, good thermal stability performance and image quality. Aspherical lens using chalcogenide glass can satisfy the requirements of modern infrared optical systems. Therefore, precision manufacturing of chalcogenide glass aspheric has received more and more attention. The molding technology of chalcogenide glass aspheric has become a research hotspot, because it can achieve mass and low cost manufacturing. The article of molding technology is focusing on a kind of chalcogenide glass aspherical lens. We report on design and fabrication of the mold that through simulation analysis of molding. Finally, through molding test, the fabrication of mold's surface and parameters of molding has been optimized, ensuring the indicators of chalcogenide glass aspherical lens meet the requirements.

  15. Chalcogenide Glass Optical Waveguides for Infrared Biosensing

    Science.gov (United States)

    Anne, Marie-Laure; Keirsse, Julie; Nazabal, Virginie; Hyodo, Koji; Inoue, Satoru; Boussard-Pledel, Catherine; Lhermite, Hervé; Charrier, Joël; Yanakata, Kiyoyuki; Loreal, Olivier; Le Person, Jenny; Colas, Florent; Compère, Chantal; Bureau, Bruno

    2009-01-01

    Due to the remarkable properties of chalcogenide (Chg) glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (bio)sensors. PMID:22423209

  16. Hybrid polymer photonic crystal fiber with integrated chalcogenide glass nanofilms

    DEFF Research Database (Denmark)

    Markos, Christos; Kubat, Irnis; Bang, Ole

    2014-01-01

    The combination of chalcogenide glasses with polymer photonic crystal fibers (PCFs) is a difficult and challenging task due to their different thermo-mechanical material properties. Here we report the first experimental realization of a hybrid polymer-chalcogenide PCF with integrated As2S3 glass ...

  17. Physics and chemistry review of layered chalcogenide superconductors

    OpenAIRE

    Deguchi, Keita; Takano, Yoshihiko; Mizuguchi, Yoshikazu

    2012-01-01

    Structural and physical properties of layered chalcogenide superconductors are summarized. In particular, we review the remarkable properties of the Fe-chalcogenide superconductors, FeSe and FeTe-based materials. Furthermore, we introduce the recently-discovered new BiS2-based layered superconductors and discuss its prospects.

  18. Synthesis and structures of metal chalcogenide precursors

    Science.gov (United States)

    Hepp, Aloysius F.; Duraj, Stan A.; Eckles, William E.; Andras, Maria T.

    1990-01-01

    The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

  19. Chemical Routes to Colloidal Chalcogenide Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Schaak, Raymond

    2015-02-19

    This project sought to develop new low-temperature synthetic pathways to intermetallic and chalcogenide nanostructures and powders, with an emphasis on systems that are relevant to advancing the synthesis, processing, and discovery of superconducting materials. The primary synthetic routes involved solution chemistry methods, and several fundamental synthetic challenges that underpinned the formation of these materials were identified and investigated. Methods for incorporating early transition metals and post transition metals into nanoscale and bulk crystals using low-temperature solution chemistry methods were developed and studied, leading to colloidal nanocrystals of elemental indium, manganese, and germanium, as well as nanocrystalline and bulk intermetallic compounds containing germanium, gallium, tin, indium, zinc, bismuth, and lithium. New chemical tools were developed to help target desired phases in complex binary intermetallic and metal chalcogenide systems that contain multiple stable phases, including direct synthesis methods and chemical routes that permit post-synthetic modification. Several phases that are metastable in bulk systems were targeted, synthesized, and characterized as nanocrystalline solids and bulk powders, including the L12-type intermetallic compounds Au3Fe, Au3Ni, and Au3Co, as well as wurtzite-type MnSe. Methods for accessing crystalline metal borides and carbides using direct solution chemistry methods were also developed, with an emphasis on Ni3B and Ni3C, which revealed useful correlations of composition and magnetic properties. Methods for scale-up and nanoparticle purification were explored, providing access to centimeter-scale pressed pellets of polyol-synthesized nanopowders and a bacteriophage-mediated method for separating impure nanoparticle mixtures into their components. Several advances were made in the synthesis of iron selenide and related superconducting materials, including the production of colloidal Fe

  20. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  1. Radiation-induced defect formation in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I.; Filipecki, J. [Physics Institute of Pedagogical University of Czestochowa, Al. Armii Krajowej 13/15, Czestochowa 42201 (Poland); Kozdras, A. [Physics Laboratory of Opole Technical University, 75 ul. Ozimska, Opole, PL-45370 (Poland); Kavetskyy, T.S. [Lviv Scientific Research Institute of Materials of Scientific Research Company ' Carat' , Stryjska Str. 202, Lviv, UA-79031 (Ukraine)

    2003-10-01

    The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As{sub 2}S{sub 3}-GeS{sub 2} and non-stoichiometric As{sub 2}S{sub 3}-Ge{sub 2}S{sub 3} chalcogenide glasses before and after {gamma}-irradiation.

  2. Debye temperatures of uranium chalcogenides from their lattice dynamics

    Indian Academy of Sciences (India)

    S Durai; P Babu

    2005-12-01

    Phonon dispersion relations in uranium chalcogenides have been investigated using a modified three-body force shell model. From the phonon frequencies, their Debye temperatures are evaluated. Further, on the basis of the spin fluctuation in the heavy fermion uranium compounds, UPt3 and UBe13, the possible superconducting transition temperatures of chalcogenides are theoretically predicted. The c values are in the same range as of those in UPt3 and UBe13.

  3. Electrochemical Synthesis and Characterization of Nanostructured Chalcogenide Materials

    OpenAIRE

    Chang, Chong Hyun

    2011-01-01

    Nanostructured materials have attracted extensive attention due to their small dimension and enhanced properties compared to bulk materials, and their large range of potential applications in energy harvesting devices. Among these materials, nanostructured chalcogenides play an important role in thermoelectric and solar cell devices. Electrochemical techniques have drawn attention as an improved method for synthesizing nanostructured chalcogenide materials, since they provide a cost-effective...

  4. Demonstration of chalcogenide glass racetrack microresonators.

    Science.gov (United States)

    Hu, Juejun; Carlie, Nathan; Petit, Laeticia; Agarwal, Anu; Richardson, Kathleen; Kimerling, Lionel

    2008-04-15

    We have demonstrated what we believe to be the first chalcogenide glass racetrack microresonator using a complementary metal-oxide semiconductor-compatible lift-off technique with thermally evaporated As(2)S(3) films. The device simultaneously features a small footprint of 0.012 mm x 0.012 mm, a cavity Q (quality factor) of 10,000, and an extinction ratio of 32 dB. These resonators exhibit a very high sensitivity to refractive index changes with a demonstrated detection capability of Dn(As(2)S(3)=(4.5 x 10(-6)+/-10%) refractive index unit. The resonators were applied to derive a photorefractive response of As(2)S(3) to lambda=550 nm light. The resonator devices are a versatile platform for both sensing and glass material property investigation.

  5. Chalcogenide glass hollow core photonic crystal fibers

    Science.gov (United States)

    Désévédavy, Frédéric; Renversez, Gilles; Troles, Johann; Houizot, Patrick; Brilland, Laurent; Vasilief, Ion; Coulombier, Quentin; Traynor, Nicholas; Smektala, Frédéric; Adam, Jean-Luc

    2010-09-01

    We report the first hollow core photonic crystal fibers (HC PCF) in chalcogenide glass. To design the required HC PCF profiles for such high index glass, we use both band diagram analysis to define the required photonic bandgap and numerical simulations of finite size HC PCFs to compute the guiding losses. The material losses have also been taken into account to compute the overall losses of the HC PCF profiles. These fibers were fabricated by the stack and draw technique from TeAsSe (TAS) glass. The fibers we drew in this work are composed of six rings of holes and regular microstructures. Two profiles are presented, one is known as a kagome lattice and the other one corresponds to a triangular lattice. Geometrical parameters are compared to the expected parameters obtained by computation. Applications of such fibers include power delivery or fiber sensors among others.

  6. Solution-processing of chalcogenide materials for device applications

    Science.gov (United States)

    Zha, Yunlai

    Chalcogenide glasses are well-known for their desirable optical properties, which have enabled many infrared applications in the fields of photonics, medicine, environmental sensing and security. Conventional deposition methods such as thermal evaporation, chemical vapor deposition, sputtering or pulse laser deposition are efficient for fabricating structures on flat surfaces. However, they have limitations in deposition on curved surfaces, deposition of thick layers and component integration. In these cases, solution-based methods, which involve the dissolution of chalcogenide glasses and processing as a liquid, become a better choice for their flexibility. After proper treatment, the associated structures can have similar optical, chemical and physical properties to the bulk. This thesis presents an in-depth study of solution-processing chalcogenide glasses, starting from the "solution state" to the "film state" and the "structure state". Firstly, chalcogenide dissolution is studied to reveal the mechanisms at molecular level and build a foundation for material processing. Dissolution processes for various chalcogenide solvent pairs are reviewed and compared. Secondly, thermal processing, in the context of high temperature annealing, is explained along with the chemical and physical properties of the annealed films. Another focus is on nanopore formation in propylamine-processed arsenic sulfide films. Pore density changes with respect to annealing temperatures and durations are characterized. Base on a proposed vacancy coalescence theory, we have identified new dissolution strategies and achieved the breakthrough of pore-free film deposition. Thirdly, several solution methods developed along with the associated photonic structures are demonstrated. The first example is "spin-coating and lamination", which produces thick (over 10 mum) chalcogenide structures. Both homogeneous thick chalcogenide structures and heterogeneous layers of different chalcogenide glasses

  7. Organic phase synthesis of noble metal-zinc chalcogenide core-shell nanostructures.

    Science.gov (United States)

    Kumar, Prashant; Diab, Mahmud; Flomin, Kobi; Rukenstein, Pazit; Mokari, Taleb

    2016-10-15

    Multi-component nanostructures have been attracting tremendous attention due to their ability to form novel materials with unique chemical, optical and physical properties. Development of hybrid nanostructures that are composed of metal-semiconductor components using a simple approach is of interest. Herein, we report a robust and general organic phase synthesis of metal (Au or Ag)-Zinc chalcogenide (ZnS or ZnSe) core-shell nanostructures. This synthetic protocol also enabled the growth of more compositionally complex nanostructures of Au-ZnSxSe1-x alloys and Au-ZnS-ZnSe core-shell-shell. The optical and structural properties of these hybrid nanostructures are also presented.

  8. Properties of molten Ge chalcogenides an ab initio molecular dynamics study

    CERN Document Server

    Raty, J Y; Bichara, C

    2003-01-01

    In this study, we perform first-principles molecular dynamics simulations of the eutectic alloy Ge sub 1 sub 5 Te sub 8 sub 5 at five different densities and temperatures. We obtain structures in agreement with the available diffraction data and obtain a new view of the molten Ge chalcogenides. We show that the anomalous volume contraction observed in the liquid 30 K above the eutectic temperature corresponds to a significant change of the Ge-Te partial structure factor. The detailed structural analysis shows that volume variations observed upon melting in Ge sub 1 sub 5 Te sub 8 sub 5 , as in liquid GeSe and GeTe, can be explained in terms of the competition between two types of local environment of the germanium atoms. A symmetrical coordination octahedron is entropically favoured at high temperature, while an asymmetrical octahedron resulting from the local manifestation of the Peierls distortion is electronically favoured at lower temperatures.

  9. Dielectric relaxation studies in Se90Cd8Sb2 glassy alloy

    Science.gov (United States)

    Shukla, Nitesh; Rao, Vandita; Dwivedi, D. K.

    2016-05-01

    Se90Cd8Sb2 chalcogenide semiconducting alloy was prepared by melt quench technique. The prepared glassy alloy has been characterized by techniques such as scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX).Dielectric properties of Se90Cd8Sb2 chalcogenide semiconductor have been studied using impedance spectroscopic technique in the frequency range 5×102Hz - 1×105Hz and in temperature range 303-318K. It is found that dielectric constant ɛ' and dielectric loss factor ɛ″ are dependent on frequency and temperature.

  10. Optical Nonlinearities in Chalcogenide Glasses and their Applications

    CERN Document Server

    Zakery, A

    2007-01-01

    Photonics, which uses photons for information and image processing, has been labeled the technology of the 21st century, for which non-linear optical processes provide the key functions of frequency conversion and optical switching. Chalcogenide glass fiber is one of the most promising candidates for use as a non-linear optical medium because of its high optical nonlinearity and long interaction length. Since the chalcogenide glass fibers transmit into the IR, there are numerous potential applications in the civil, medical and military areas. One of the most exciting developments in the future is going to be in the area of rare-earth ion doping of chalcogenide fibers for IR fluorescence emission. The IR light sources, lasers and amplifiers developed using this phenomena will be very useful in civil, medical and military applications. Remote IR spectroscopy and imaging using flexible fibers will be realized for applications. Other future research areas which will inevitably be explored includes non-linear opti...

  11. Nonlinear optical localization in embedded chalcogenide waveguide arrays

    Directory of Open Access Journals (Sweden)

    Mingshan Li

    2014-05-01

    Full Text Available We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm2, using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass.

  12. Hierarchical Architecturing for Layered Thermoelectric Sulfides and Chalcogenides

    Directory of Open Access Journals (Sweden)

    Priyanka Jood

    2015-03-01

    Full Text Available Sulfides are promising candidates for environment-friendly and cost-effective thermoelectric materials. In this article, we review the recent progress in all-length-scale hierarchical architecturing for sulfides and chalcogenides, highlighting the key strategies used to enhance their thermoelectric performance. We primarily focus on TiS2-based layered sulfides, misfit layered sulfides, homologous chalcogenides, accordion-like layered Sn chalcogenides, and thermoelectric minerals. CS2 sulfurization is an appropriate method for preparing sulfide thermoelectric materials. At the atomic scale, the intercalation of guest atoms/layers into host crystal layers, crystal-structural evolution enabled by the homologous series, and low-energy atomic vibration effectively scatter phonons, resulting in a reduced lattice thermal conductivity. At the nanoscale, stacking faults further reduce the lattice thermal conductivity. At the microscale, the highly oriented microtexture allows high carrier mobility in the in-plane direction, leading to a high thermoelectric power factor.

  13. Electronic-structure calculations of large cadmium chalcogenide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Frenzel, Johannes [Lehrstuhl fuer Theoretische Chemie, Ruhr-Universitaet Bochum (Germany); Joswig, Jan-Ole [Physikalische Chemie, Technische Universitaet Dresden (Germany)

    2012-02-15

    In this paper, we will review our studies of large cadmium chalcogenide nanoparticles and present some new results on cadmium telluride systems. All calculations have been performed using density-functional based methods. The studies deal with the structural properties of saturated and unsaturated nanoparticles where the surfactants generally are hydrogen atoms or thiol groups. We have focused on the investigation of the density of states, the Mulliken charges, the eigenvalue spectra, and the spatial distributions of the frontier orbitals. Optical excitation spectra of pure CdS and CdSe/CdS core-shell systems have been calculated using a linear-response formalism. The reviewed studies are compared to the state of the art of modeling large cadmium chalcogenide particles. Optical excitations in large saturated cadmium chalcogenide nanoparticles with several thousand atoms. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Effect of pressure on the phonon properties of europium chalcogenides

    Indian Academy of Sciences (India)

    U K Sakalle; P K Jha; S P Sanyal

    2000-06-01

    Lattice vibrational properties of europium chalcogenides have been investigated at high pressure by using a simple lattice dynamical model theory viz. the three-body force rigid ion model (TRIM) which includes long range three-body interaction arising due to charge transfer effects. The dispersion curves for the four Eu-chalcogenides agree reasonably well with the available experimental data. Variation of LO, TO, LA and TA phonons with pressure have also been studied at the symmetry points of the brillouin zone (BZ) for Euchalcogenides for the first time by using a lattice dynamical model theory. We have also calculated the one phonon density of states and compared them with the first order Raman scattering results. The calculation of one phonon density of states for Eu-chalcogenides has also been extended up to the phase transition pressure. We observed a pronounced shift in phonon spectrum as pressure is increased.

  15. High surface area graphene-supported metal chalcogenide assembly

    Science.gov (United States)

    Worsley, Marcus A.; Kuntz, Joshua; Orme, Christine A.

    2016-04-19

    A composition comprising at least one graphene-supported assembly, which comprises a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds, and at least one metal chalcogenide compound disposed on said graphene sheets, wherein the chalcogen of said metal chalcogenide compound is selected from S, Se and Te. Also disclosed are methods for making and using the graphene-supported assembly, including graphene-supported MoS.sub.2. Monoliths with high surface area and conductivity can be achieved. Lower operating temperatures in some applications can be achieved. Pore size and volume can be tuned.

  16. Mid infrared supercontinuum generation from chalcogenide glass waveguides and fibers

    DEFF Research Database (Denmark)

    Luther-Davies, Barry; Yu, Yi; Zhang, Bin;

    2015-01-01

    I report work on mid-infrared super-continuum generation in chalcogenide fibers and waveguides pumped by 320fsec pulses at 21MHz in the 3-4.6µm range. Average powers of ≈20mW were produced with spectral coverage from <2µm to >11µm.......I report work on mid-infrared super-continuum generation in chalcogenide fibers and waveguides pumped by 320fsec pulses at 21MHz in the 3-4.6µm range. Average powers of ≈20mW were produced with spectral coverage from 11µm....

  17. Recent Advances in Layered Metal Chalcogenides as Superconductors and Thermoelectric Materials: Fe-Based and Bi-Based Chalcogenides.

    Science.gov (United States)

    Mizuguchi, Yoshikazu

    2016-04-01

    Recent advances in layered (Fe-based and Bi-based) chalcogenides as superconductors or functional materials are reviewed. The Fe-chalcogenide (FeCh) family are the simplest Fe-based high-Tc superconductors. The superconductivity in the FeCh family is sensitive to external or chemical pressure, and high Tc is attained when the local structure (anion height) is optimized. The Bi-chalcogenide (BiCh2) family are a new group of layered superconductors with a wide variety of stacking structures. Their physical properties are also sensitive to external or chemical pressure. Recently, we revealed that the emergence of superconductivity and the Tc in this family correlate with the in-plane chemical pressure. Since the flexibility of crystal structure and electronic states are an advantage of the BiCh2 family for designing functionalities, I briefly review recent developments in this family as not only superconductors but also other functional materials.

  18. On the instability effects in radiation-sensitive chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, V. [Lviv State University for Vital Activity Safety, 35 Kleparivska str., Lviv, UA-79007 (Ukraine); Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Kovalskiy, A. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)], E-mail: shpotyuk@novas.lviv.ua; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)

    2007-04-15

    The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy {gamma}-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters.

  19. Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    McMillen Ben

    2013-11-01

    Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

  20. Chalcogenide microstructured optical fibres for mid-IR applications

    Science.gov (United States)

    Trolès, Johann; Brilland, Laurent

    2017-01-01

    Compared to oxide-based glasses, vitreous materials composed of chalcogen elements (S, Se, Te) show large transparency windows in the infrared. Indeed, chalcogenide glasses can be transparent from the visible up to 12- 18 μm, depending on their compositions. In addition, chalcogenide glasses contain large polarisable atoms and external lone electron pairs that induce exceptional non-linear properties. Consequently, the non-linear properties can be 100 or 1000 times as high as the non-linearity of silica. An original way to obtain single-mode fibres is to design microstructured optical fibres (MOFs). These fibres present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. Various chalcogenide MOFs operating in the IR range have been elaborated in order to associate the high non-linear properties of these glasses with the original MOF properties. Indeed, chalcogenide MOFs might lead to new devices with unique optical properties in the mid-infrared domain, like multimode or endlessly single-mode transmission of light, small or large mode area fibres, highly birefringent fibres and non-linear properties for wavelength conversion or generation of supercontinuum sources. xml:lang="fr"

  1. Magnetic excitations in iron chalcogenide superconductors.

    Science.gov (United States)

    Kotegawa, Hisashi; Fujita, Masaki

    2012-10-01

    Nuclear magnetic resonance and neutron scattering experiments in iron chalcogenide superconductors are reviewed to make a survey of the magnetic excitations in FeSe, FeSe1-x Te x and alkali-metal-doped Ax Fe2-y Se2 (A = K, Rb, Cs, etc). In FeSe, the intimate relationship between the spin fluctuations and superconductivity can be seen universally for the variations in the off-stoichiometry, the Co-substitution and applied pressure. The isovalent compound FeTe has a magnetic ordering with different wave vector from that of other Fe-based magnetic materials. The transition temperature Tc of FeSe increases with Te substitution in FeSe1-x Te x with small x, and decreases in the vicinity of the end member FeTe. The spin fluctuations are drastically modified by the Te substitution. In the vicinity of the end member FeTe, the low-energy part of the spin fluctuation is dominated by the wave vector of the ordered phase of FeTe; however, the reduction of Tc shows that it does not support superconductivity. The presence of same wave vector as that of other Fe-based superconductors in FeSe1-x Te x and the observation of the resonance mode demonstrate that FeSe1-x Te x belongs to the same group as most of other Fe-based superconductors in the entire range of x, where superconductivity is mediated by the spin fluctuations whose wave vector is the same as the nesting vector between the hole pockets and the electron pockets. On the other hand, the spin fluctuations differ for alkali-metal-doped Ax Fe2-y Se2 and FeSe or other Fe-based superconductors in their wave vector and strength in the low-energy part, most likely because of the different Fermi surfaces. The resonance mode with different wave vector suggests that Ax Fe2-y Se2 has an exceptional superconducting symmetry among Fe-based superconductors.

  2. Chemical Routes to Colloidal Chalcogenide Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Schaak, Raymond E. [Pennsylvania State Univ., University Park, PA (United States)

    2014-11-25

    This project began with an emphasis on developing new low-­temperature synthetic routes to intermetallic alloys in order to advance the synthesis and processing science of superconducting materials, as well as to potentially discover new materials that would be inaccessible using more traditional higher-­temperature methods. Our initial target materials, chosen as model systems for developing new low-­temperature solution-­based synthetic platforms, were based on well known superconducting alloys, including Nb3M (M = Ga, Ge, Sn), Bi-­M (M = In, Cu), and MgCNi3. Several key, fundamental synthetic challenges that underpinned the formation of these materials using solution chemistry routes were identified and investigated.

  3. Nanoscale structure and atomic disorder in the iron-based chalcogenides.

    Science.gov (United States)

    Saini, Naurang Lal

    2013-02-01

    The multiband iron-based superconductors have layered structure with a phase diagram characterized by a complex interplay of charge, spin and lattice excitations, with nanoscale atomic structure playing a key role in their fundamental electronic properties. In this paper, we briefly review nanoscale structure and atomic disorder in iron-based chalcogenide superconductors. We focus on the Fe(Se,S)1-x Te x (11-type) and K0.8Fe1.6Se2 (122-type) systems, discussing their local structure obtained by extended x-ray absorption fine structure. Local structure studies on the Fe(Se,S)1-x Te x system reveal clear nanoscale phase separation characterized by coexisting components of different atomic configurations, similar to the case of random alloys. In fact, the Fe-Se/S and Fe-Te distances in the ternary Fe(Se,S)1-x Te x are found to be closer to the respective distances in the binary FeSe/FeS and FeTe systems, showing significant divergence of the local structure from the average one. The observed features are characteristic of ternary random alloys, indicating breaking of the local symmetry in these materials. On the other hand, K0.8Fe1.6Se2 is known for phase separation in an iron-vacancy ordered phase and an in-plane compressed lattice phase. The local structure of these 122-type chalcogenides shows that this system is characterized by a large local disorder. Indeed, the experiments suggest a nanoscale glassy phase in K0.8Fe1.6Se2, with the superconductivity being similar to the granular materials. While the 11-type structure has no spacer layer, the 122-type structure contains intercalated atoms unlike the 1111-type REFeAsO (RE = rare earth) oxypnictides, having well-defined REO spacer layers. It is clear that the interlayer atomic correlations in these iron-based superconducting structures play an important role in structural stability as well as superconductivity and magnetism.

  4. Error-free 640 Gbit/s demultiplexing using a chalcogenide planar waveguide chip

    DEFF Research Database (Denmark)

    Xu, Jing; Galili, Michael; Mulvad, Hans Christian Hansen;

    2008-01-01

    We demonstrate error free, low-penalty demultiplexing of a 640 Gbit/s OTDM signal to 10 Gbit/s using a 5cm long chalcogenide planar waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide.......We demonstrate error free, low-penalty demultiplexing of a 640 Gbit/s OTDM signal to 10 Gbit/s using a 5cm long chalcogenide planar waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide....

  5. Synthesis of cadmium chalcogenide nanotubes at room temperature

    KAUST Repository

    Pan, Jun

    2012-10-01

    Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

  6. Mold design with simulation for chalcogenide glass precision molding

    Science.gov (United States)

    Zhang, Yunlong; Wang, Zhibin; Li, Junqi; Zhang, Feng; Su, Ying; Wang, Zhongqiang

    2016-10-01

    Compare with the manufacturing of the traditional infrared material, such as signal crystal germanium, zinc sulfide, zinc selenide etc, chalcogenide infrared glass is suitable for precision molding for the low soften temperature to have large mass industry production. So the researches of precision glass molding are necessary, especially for the fast development of infrared product. The mold design is one of the key technologies of precision glass molding. In this paper, the mold processing of a sample chalcogenide glass from the technical drawing, mold design, molding to the lens are introduced. From the result of the precision molding, the technology of finite element simulation is a useful way to guiding the mold design. The molded lens by using mold process fit the design requirement.

  7. Nonlinear light propagation in chalcogenide photonic crystal slow light waveguides.

    Science.gov (United States)

    Suzuki, Keijiro; Baba, Toshihiko

    2010-12-06

    Optical nonlinearity can be enhanced by the combination of highly nonlinear chalcogenide glass and photonic crystal waveguides (PCWs) providing strong optical confinement and slow-light effects. In a Ag-As(2)Se(3) chalcogenide PCW, the effective nonlinear parameter γeff reaches 6.3 × 10(4) W(-1)m(-1), which is 200 times larger than that in Si photonic wire waveguides. In this paper, we report the detailed design, fabrication process, and the linear and nonlinear characteristics of this waveguide at silica fiber communication wavelengths. We show that the waveguide exhibits negligible two-photon absorption, and also high-efficiency self-phase modulation and four-wave mixing, which are assisted by low-dispersion slow light.

  8. Microbial synthesis of chalcogenide semiconductor nanoparticles: a review

    OpenAIRE

    Jacob, Jaya Mary; Lens, Piet N. L.; Balakrishnan, Raj Mohan

    2015-01-01

    Summary Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment‐friendly synthesis procedures. Microbial factories hold immense potentia...

  9. Electronic structure of ruthenium-doped iron chalcogenides

    Science.gov (United States)

    Winiarski, M. J.; Samsel-Czekała, M.; Ciechan, A.

    2014-12-01

    The structural and electronic properties of hypothetical RuxFe1-xSe and RuxFe1-xTe systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions RuxFe1-xSe and RuxFe1-xTe become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the RuxFe1-xSe and RuxFe1-xTe systems are good candidates for new superconducting iron-based materials.

  10. Low temperature Hall effect in bismuth chalcogenides thin films

    OpenAIRE

    Kuntsevich, A. Yu.; Gabdullin, A. A.; Prudkogliad, V. A.; Selivanov, Yu. G.; Chizhevskii, E. G.; Pudalov, V. M.

    2016-01-01

    Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenologi...

  11. STUDIES OF CHALCOGENIDE VITREOUS SEMICONDUCTORS IN THE IOFFE PHYSICOTECHNICAL INSTITUTE

    OpenAIRE

    Kolomiets, B.

    1981-01-01

    The broad class of semiconductors discovered at the Ioffe Physical-Technical Institute in 1955-56 [1] and termed at present chalcogenide vitreous semiconductors (ChVS) has recently been attracting ever increasing interest of the researchers due to many properties which are unusual for crystalline semiconductors. During a number of years, our interests here been primarily connected with such basic problems as the transport phenomena, electronic spectrum, the role of impurities, optical and pho...

  12. Local tuning of photonic crystal cavities using chalcogenide glasses

    CERN Document Server

    Faraon, Andrei; Bulla, Douglas; Luther-Davies, Barry; Eggleton, Benjamin J; Stoltz, Nick; Petroff, Pierre; Vuckovic, Jelena

    2007-01-01

    We demonstrate a method to locally change the refractive index in planar optical devices by photodarkening of a thin chalcogenide glass layer deposited on top of the device. The method is used to tune the resonance of GaAs-based photonic crystal cavities by up to 3 nm at 940 nm, with only 5% deterioration in cavity quality factor. The method has broad applications for postproduction tuning of photonic devices.

  13. Chalcogenide material strengthening through the lens molding process

    Science.gov (United States)

    Nelson, J.; Scordato, M.; Lucas, Pierre; Coleman, Garrett J.

    2016-05-01

    The demand for infrared transmitting materials has grown steadily for several decades as markets realize new applications for longer wavelength sensing and imaging. With this growth has come the demand for new and challenging material requirements that cannot be satisfied with crystalline products alone. Chalcogenide materials, with their unique physical, thermal, and optical properties, have found acceptance by designers and fabricators to meet these demands. No material is perfect in every regard, and chalcogenides are no exception. A cause for concern has been the relatively low fracture toughness and the propensity of the bulk material to fracture. This condition is amplified when traditional subtractive manufacturing processes are employed. This form of processing leaves behind micro fractures and sub surface damage, which act as propagation points for both local and catastrophic failure of the material. Precision lens molding is not a subtractive process, and as a result, micro fractures and sub surface damage are not created. This results in a stronger component than one produced by traditional methods. New processing methods have also been identified that result in an even stronger surface that is more resistant to breakage, without the need for post processing techniques that may compromise surface integrity. This paper will discuss results achieved in the process of lens molding development at Edmund Optics that result in measurably stronger chalcogenide components. Various metrics will be examined and data will be presented that quantifies component strength for different manufacturing processes.

  14. Linear and nonlinear optical properties of chalcogenide microstructured optical fibers

    Science.gov (United States)

    Trolès, Johann; Brilland, Laurent; Caillaud, Celine; Renversez, Gilles; Mechin, David; Adam, Jean-Luc

    2015-03-01

    Chalcogenide glasses are known for their large transparency in the mid-infrared and their high linear refractive index (>2). They present also a high non-linear coefficient (n2), 100 to 1000 times larger than for silica, depending on the composition. we have developed a casting method to prepare the microstructured chalcogenide preform. This method allows optical losses as low as 0.4 dB/m at 1.55 µm and less than 0.05 dB/m in the mid IR. Various chalcogenide MOFs operating in the IR range has been fabricated in order to associate the high non-linear properties of these glasses and the original MOF properties. For example, small core fibers have been drawn to enhance the non linearities for telecom applications such as signal regeneration and generation of supercontinuum sources. On another hand, in the 3-12 µm window, single mode fibers and exposed core fibers have been realized for Gaussian beams propagation and sensors applications respectively.

  15. Synthesis, characterization, and structure of reduced tungsten chalcogenide cluster complexes

    Energy Technology Data Exchange (ETDEWEB)

    Xiaobing, Xie

    1997-02-01

    Over the previous twenty years, ternary molybdenum chalcogenides of the general formula M{sub x}Mo{sub 6}Y{sub 8} (M = ternary metal cation; Y = chalcogenide), known as Chevrel phases, have been extensively studied. Many of these compounds have been found to have superconductivity, catalytic activity and ionic conductivity. The rich chemistry of the Chevrel phases raises considerable interest in finding the tungsten analogues of these phases. However, no such analogue has ever been synthesized, although the Chevrel phases are usually prepared directly from elements at high temperatures above 1000{degrees}C. The absence of the tungsten analogues may be caused by their thermodynamic instability at such high temperatures. Thus it might be necessary to avoid high-temperature synthetic procedures in order to establish the ternary and binary tungsten chalcogenides. A major focus of the McCarley research group has been on the preparation of M{sub 6}Y{sub 8}L{sub 6} (M = Mo, W; Y = S, Se, Te) cluster complexes as low temperature pathways to the Chevrel phases.

  16. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  17. Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

    NARCIS (Netherlands)

    Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

    2011-01-01

    Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

  18. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    Science.gov (United States)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  19. Chemical synthesis and modification of target phases of chalcogenide nanomaterials

    Science.gov (United States)

    Sines, Ian T.

    Inorganic nanoparticles have been at the forefront of materials research in recent years due to their utility in modern technological processes. Chalcogenide nanomaterials are of particular interest because of their wide range of desirable properties for semiconductors, magnetic devices, and energy industries. Primary factors that dictate the properties of the material are the elemental composition, crystal structure, stoichiometry, crystallite size, and particle morphology. One of the most common approaches to synthesize these materials is through solution mediated routes. This approach offers unique advantages in controlling the morphology and particle size that other methods lack. This dissertation describes our recent work on exploiting solution chemical routes to control the crystal structure and composition of chalcogenide nanomaterials. We will start by discussing solution chemistry routes to synthesize non-equilibrium phases of chaclogenide nanomaterials. By using low-temperature bottom-up techniques it is possible to trap kinetically stable phases that cannot be accessed using traditional high-temperature techniques. We used solution chemistry to synthesize and characterize, for the first time, wurtzite-type MnSe. Wurtzite-type MnSe is the end-member of the highly investigated ZnxMn1-xSe solid solution, a classic magnetic semiconductor system. We will then discuss PbO-type FeS, another non-equilibrium phase that is isostructural with the superconducting phase of FeSe. We synthesized phase-pure PbO-type FeS using a low-temperature solvothermal route. We will then discuss the post-synthetic modification of chalcogenides nanomaterials. By exploiting the solubility of Se and S in tri-n-octylphosphine we can selectively extract the chalcogen from preformed chalcogenide nanomaterials. This gives chemists a technique for purification and phase-targeting of particular chalcogenide phases. This method can be modified to facilitate anion exchange. When Te is

  20. The intercalation chemistry of layered iron chalcogenide superconductors

    Science.gov (United States)

    Vivanco, Hector K.; Rodriguez, Efrain E.

    2016-10-01

    The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials-mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

  1. Chalcogenide photovoltaics physics, technologies, and thin film devices

    CERN Document Server

    Scheer, Roland

    2011-01-01

    This first comprehensive description of the most important material properties and device aspects closes the gap between general books on solar cells and journal articles on chalcogenide-based photovoltaics. Written by two very renowned authors with years of practical experience in the field, the book covers II-VI and I-III-VI2 materials as well as energy conversion at heterojunctions. It also discusses the latest semiconductor heterojunction models and presents modern analysis concepts. Thin film technology is explained with an emphasis on current and future techniques for mass production, a

  2. Low-temperature Hall effect in bismuth chalcogenides thin films

    Science.gov (United States)

    Kuntsevich, A. Yu.; Gabdullin, A. A.; Prudkogliad, V. A.; Selivanov, Yu. G.; Chizhevskii, E. G.; Pudalov, V. M.

    2016-12-01

    Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures, thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using a purely phenomenological approach, with no microscopic theory, we show that the low-temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with the diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.

  3. Ultrafast laser fabrication of Bragg waveguides in chalcogenide glass.

    Science.gov (United States)

    McMillen, Ben; Li, Mingshan; Huang, Sheng; Zhang, Botao; Chen, Kevin P

    2014-06-15

    Bragg waveguides are fundamental components in photonic integrated circuits and are particularly interesting for mid-IR applications in high index, highly nonlinear materials. In this work, we present Bragg waveguides fabricated in bulk chalcogenide glass using an ultrafast laser. Waveguides with near circularly symmetric cross sections and low propagation loss are obtained through spatial and temporal beam shaping. Using a single-pass technique, the waveguide and Bragg structure are formed at the same time. First through sixth order gratings with strengths of up to 25 dB are realized, and performance is evaluated based on the modulation duty cycle of the writing beam.

  4. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Scientific Research Company “Carat” (Ukraine); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Shpotyuk, M. [Scientific Research Company “Carat” (Ukraine); Ingram, A. [Opole Technical University (Poland); Szatanik, R. [Opole University (Poland)

    2015-03-15

    Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

  5. Reversibility windows in selenide-based chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Hyla, M. [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Boyko, V. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Lviv National Polytechnic University, 12, Bandera Street, Lviv, UA 79013 (Ukraine); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine)], E-mail: golovchak@novas.lviv.ua

    2008-10-01

    A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory.

  6. Narrow linewidth Brillouin laser based on chalcogenide photonic chip

    CERN Document Server

    Kabakova, Irina V; Choi, Duk-Yong; Debbarma, Sukhanta; Luther-Davies, Barry; Madden, Stephen J; Eggleton, Benjamin J

    2013-01-01

    We present the first demonstration of a narrow linewidth, waveguide-based Brillouin laser which is enabled by large Brillouin gain of a chalcogenide chip. The waveguides are equipped with vertical tapers for low loss coupling. Due to optical feedback for the Stokes wave, the lasing threshold is reduced to 360 mW, which is 5 times lower than the calculated single-pass Brillouin threshold for the same waveguide. The slope efficiency of the laser is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

  7. Optical properties of chalcogenide Ge-Te-In thin films

    Science.gov (United States)

    Zaidan, A.; Ivanova, V.; Petkov, P.

    2012-03-01

    Thin films of the chalcogenide (GeTe4)1-xInx with various compositions (x = 0, 5, 10, 15, 20 at %) were deposited under vacuum on glass substrates by thermal evaporation. The optical transmission and reflection spectra of the films at normal incidence were investigated in the spectral range from 800 to 2600 nm. Using the transmission spectra, the optical constants (refractive index (n) and extinction coefficient (k)) were calculated based on Swanepoel's method. The optical band gap (Egopt) was also estimated using Tauc's extrapolation procedure.

  8. The electronic structure of europium chalcogenides and pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Horne, M [Department of Physics, Keele University, Staffordshire ST5 5DY (United Kingdom); Strange, P [Department of Physics, Keele University, Staffordshire ST5 5DY (United Kingdom); Temmerman, W M [Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Svane, A [Institute of Physics and Astronomy, University of Aarhus, DK-8000, Aarhus (Denmark); Winter, H [INFP, Forschungzentrum Karlsruhe GmbH, Postfach 3640, D-76021, Karlsruhe (Germany)

    2004-07-21

    The electronic structure of some europium chalcogenides and pnictides is calculated using the ab initio self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localized description of the rare earth f-electrons and an itinerant description of s-, p-, and d-electrons. Localizing different numbers of f-electrons on the rare earth atom corresponds to different nominal valencies, and the total energies can be compared, providing a first-principles description of valency. All the chalcogenides are found to be insulators in the ferromagnetic state and to have a divalent configuration. For the pnictides we find that EuN is half-metallic and the rest are normal metals. However, a valence change occurs as we go down the pnictide column of the periodic table. EuN and EuP are trivalent, EuAs is only just trivalent, and EuSb is found to be divalent. Our results suggest that these materials may find applications in spintronic and spin filtering devices.

  9. Reversible amorphous-crystalline phase changes in a wide range of Se1-xTex alloys studied using ultrafast differential scanning calorimetry

    NARCIS (Netherlands)

    Vermeulen, Paul. A.; Momand, Jamo; Kooi, Bart J.

    2014-01-01

    The reversible amorphous-crystalline phase change in a chalcogenide material, specifically the Se1-xTex alloy, has been investigated for the first time using ultrafast differential scanning calorimetry. Heating rates and cooling rates up to 5000 K/s were used. Repeated reversible amorphous-crystalli

  10. New Trends in Amplifiers and Sources via Chalcogenide Photonic Crystal Fibers

    Directory of Open Access Journals (Sweden)

    L. Mescia

    2012-01-01

    Full Text Available Rare-earth-doped chalcogenide glass fiber lasers and amplifiers have great applicative potential in many fields since they are key elements in the near and medium-infrared (mid-IR wavelength range. In this paper, a review, even if not exhaustive, on amplification and lasing obtained by employing rare-earth-doped chalcogenide photonic crystal fibers is reported. Materials, devices, and feasible applications in the mid-IR are briefly mentioned.

  11. Gadolinium-Induced Multi-Effect on Properties of IR Transmitting Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    ZHAO Dong-Hui; XIA Fang; NIE Jia-Xiang; CHEN Guo-Rong; ZHANG Xiang-Hua; MA Hong-Li; ADAM Jean-Luc

    2004-01-01

    @@ We introduce gadolinium in chalcogenide glasses to exert unexpectedly the multiple magical effects on both optical and thermal mechanical properties of chalcogenide glasses. Notable increases in transition temperature Tg and microhardness Hv were observed due to structural densitication and microcrystallization. Calculated molar volume values, differential scanning calorimetry and x-ray diffraction measurements provide supporting evidences. Gadolinium also acts as oxygen getter by removing or weakening oxygen-related absorption bands,which is associated with the higher negative electrode potential.

  12. Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Li-Na; Wang, H.C.; Shen, Y.; Lin, Yuan-Hua, E-mail: linyh@mail.tsinghua.edu.cn; Nan, Ce-Wen [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2016-01-15

    Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors.

  13. Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te

    Directory of Open Access Journals (Sweden)

    Li-Na Qiao

    2016-01-01

    Full Text Available Nanostructured lead chalcogenides (PbX, X = Te, Se, S were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors.

  14. Comparison of loss in silica and chalcogenide negative curvature fibers as the wavelength varies

    Directory of Open Access Journals (Sweden)

    Chengli Wei

    2016-07-01

    Full Text Available We computationally study fiber loss in negative curvature fibers made with silica, As2S3 chalcogenide, and As2Se3 chalcogenide glasses with a fixed core-diameter-to-wavelength ratio of 30. We consider both simple and nested geometries as the transmission wavelength varies. At wavelengths shorter than 4.5 µm, silica negative curvature fibers have a loss that is around or below 0.1 dB/m and are preferable to chalcogenide fibers. At wavelengths longer than 4.5 µm, it is preferable to use As2S3 chalcogenide or As2Se3 chalcogenide negative curvature fibers since their loss is one or more orders of magnitude lower than the loss of silica negative curvature fibers. With nested negative curvature fibers, chalcogenide fibers have losses that are lower than those of silica fibers at wavelengths larger than 2 µm. However, it is still preferable to use silica nested negative curvature fibers at wavelengths less than 4.5 µm and with a loss around or lower than 0.1 dB/m due to the fabrication advantages of silica fibers.

  15. Phase segregation in Pb:GeSbTe chalcogenide system

    Science.gov (United States)

    Kumar, J.; Ahmad, M.; Chander, R.; Thangaraj, R.; Sathiaraj, T. S.

    2008-01-01

    Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge{2}Sb{2}Te{5} has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 °C in Pb{0}Ge{20}Sb{24}Te{56}, Pb{1.6}Ge{19}Sb{26}Te{54}, Pb{3}Ge{17}Sb{28}Te{53} and Pb{5}Ge{12}Sb{28}Te{55} respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition.

  16. Longitudinal Magnetoresistance and "Chiral" Coupling in Silver Chalcogenides

    Institute of Scientific and Technical Information of China (English)

    XU Jie; ZHANG Duan-Ming

    2011-01-01

    A complex longitudinal magnetoresistance (MR∥) effect in the non-stoichiometric silver chalcogenides (include the silver selenide and telluride) has been found, however the mechanism for the MR∥ effect is not clear now.In this work, a new random resistor network for MR∥ effect is proposed based on the experimental observation. The network is constructed from six-terminal resistor units and the mobility of carries within the network has a Gaussian distribution. Considering the non-zero transverse-longitudinal coupling in materials, the resistance matrix of the sixterminal resistor unit is modified. It is found that the material has the "chiral" transverse-longitudinal couplings, which is suggested a main reason for the complex MR∥ effect. The model predictions are compared with the experimental results.A three dimension (3D) visualization of current flow within the network demonstrates the "current jets" phenomenon in the thickness of materials clearly.

  17. Flexible chalcogenide glass microring resonator for mid-infrared emission

    Science.gov (United States)

    Wang, Liangliang; Li, Lijing; Sun, Mingjie

    2016-10-01

    Emerging applications in communication, sensing, medical, and many other fields call for on-chip microring laser, however, the method to make it work at mid-infrared still need to be explored. In this paper, a microring resonator integrated in flexible substrate is designed and evaluated, with high Q-factor ( 105) at pump and signal wavelengths, achieving emission in mid-infrared (3.6μm) using rare earth doped chalcogenide glass. Furthermore, the strain-optical coupling in multilayer flexible materials is numerically verified, and a 0.3 nm/μɛ resonance wavelength shift is achieved by local neutral axis theory, without significant loss of flexible device performance.

  18. Meyer–Neldel DC conduction in chalcogenide glasses

    Indian Academy of Sciences (India)

    S PraKash; Kulbir Kaur; Navdeep Goyal; S K Tripathi

    2011-04-01

    Meyer–Neldel (MN) formula for DC conductivity (DC) of chalcogenide glasses is obtained using extended pair model and random free energy barriers. The integral equations for DC hopping conductivity and external conductance are solved by iterative procedure. It is found that MN energy ( MN) originates from temperature-induced configurational and electronic disorders. Single polaron-correlated barrier hopping model is used to calculate DC and the experimental data of Se, As2S3, As2Se3 and As2Te3 are explained. The variation of attempt frequency 0 and MN with parameter (/), where is the intersite separation and is the radius of localized states, is also studied. It is found that 0 and MN decrease with increase of (/), and MN may not be present for low density of defects.

  19. Fabrication and characterization of chalcogenide glass photonic crystal waveguides.

    Science.gov (United States)

    Suzuki, Keijiro; Hamachi, Yohei; Baba, Toshihiko

    2009-12-07

    We report on the fabrication of chalcogenide glass (Ag-As(2)Se(3)) photonic crystal waveguides and the first detailed characterization of the linear and nonlinear optical properties. The waveguides, fabricated by e-beam lithography and ICP etching exhibit typical transmission spectra of photonic crystal waveguides, and exhibit high optical nonlinearity. Nonlinear phase shift of 1.5pi through self-phase modulation is observed at 0.78 W input peak power in a 400 microm long device. The effective nonlinear parameter gamma(eff) estimated from this result reaches 2.6 x 10(4) W(-1)m(-1). Four-wave mixing is also observed in the waveguide, while two-photon absorption at optical communication wavelengths is sufficiently small and the corresponding figure of merit is larger than 11.

  20. Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

    Energy Technology Data Exchange (ETDEWEB)

    Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

    2013-04-30

    For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

  1. Qualification and metrology for US-produced chalcogenides

    Science.gov (United States)

    Carlie, Nathan

    2012-06-01

    The recent trend in infrared optics has been toward higher resolution with wider fields of view, lower weight and size, and broader temperature ranges. This places much more stringent requirements on the measurement and control of the properties of the optical materials within these systems. In response to these demands, SCHOTT North America recently announced domestic production of the IG glass series (IG2-IG6) of chalcogenide glasses within the US which has spurred renewed focus the characterization to bring these glasses to a similar level as standard optical glasses. This paper will present and discuss the novel inspection systems and the process used to qualify refractive index of these materials, with a focus on data presentation, in order to demonstrate the methodology and utility of the methods and data produced.

  2. 10 um wavefront spatial filtering first results with chalcogenide fibers

    CERN Document Server

    Bordé, P J; Nguyen, T; Amy-Klein, A; Daussy, C; Raynal, P; Léger, A; Mazé, G; Borde, Pascal; Perrin, Guy; Nguyen, Thanh; Amy-Klein, Anne; Daussy, Christophe; Raynal, Pierre-Ivan; Leger, Alain; Maze, Gwenael

    2003-01-01

    Wavefront cleaning by single-mode fibers has proved to be efficient in optical-infrared interferometry to improve calibration quality. For instance, the FLUOR instrument has demonstrated the capability of fluoride glass single-mode fibers in this respect in the K and L bands. New interferometric instruments developped for the mid-infrared require the same capability for the 8-12 um range. We have initiated a program to develop single-mode fibers in the prospect of the VLTI mid-infrared instrument MIDI and of the ESA/DARWIN and NASA/TPF missions that require excellent wavefront quality. In order to characterize the performances of chalcogenide fibers we are developping, we have set up an experiment to measure the far-field pattern radiated at 10 um. In this paper, we report the first and promising results obtained with this new component.

  3. Structural phase transition and elastic properties of mercury chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Shriya, S. [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria)

    2012-08-15

    Pressure induced structural transition and elastic properties of ZnS-type (B3) to NaCl-type (B1) structure in mercury chalcogenides (HgX; X = S, Se and Te) are presented. An effective interionic interaction potential (EIOP) with long-range Coulomb, as well charge transfer interactions, Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbor ions and van der Waals interactions are considered. Emphasis is on the evaluation of the pressure dependent Poisson's ratio {nu}, the ratio R{sub BT/G} of B (bulk modulus) over G (shear modulus), anisotropy parameter, Shear and Young's modulus, Lame constant, Kleinman parameter, elastic wave velocity and thermodynamical property as Debye temperature. The Poisson's ratio behavior infers that Mercury chalcogenides are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations. Highlights: Black-Right-Pointing-Pointer Vast volume discontinuity in phase diagram infers transition from ZnS to NaCl structure. Black-Right-Pointing-Pointer The shear elastic constant C{sub 44} is nonzero confirms the mechanical stability. Black-Right-Pointing-Pointer Pressure dependence of {theta}{sub D} infers the softening of lattice with increasing pressure. Black-Right-Pointing-Pointer Estimated bulk, shear and tetragonal moduli satisfied elastic stability criteria. Black-Right-Pointing-Pointer In both B3 and B1 phases, C{sub 11} and C{sub 12} increase linearly with pressure.

  4. Infrared emitting and photoconducting colloidal silver chalcogenide nanocrystal quantum dots from a silylamide-promoted synthesis.

    Science.gov (United States)

    Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Günter; Heiss, Wolfgang

    2011-05-24

    Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.

  5. Nonlinear characterization of GeSbS chalcogenide glass waveguides

    Science.gov (United States)

    Choi, Ju Won; Han, Zhaohong; Sohn, Byoung-Uk; Chen, George F. R.; Smith, Charmayne; Kimerling, Lionel C.; Richardson, Kathleen A.; Agarwal, Anuradha M.; Tan, Dawn T. H.

    2016-12-01

    GeSbS ridge waveguides have recently been demonstrated as a promising mid – infrared platform for integrated waveguide – based chemical sensing and photodetection. To date, their nonlinear optical properties remain relatively unexplored. In this paper, we characterize the nonlinear optical properties of GeSbS glasses, and show negligible nonlinear losses at 1.55 μm. Using self – phase modulation experiments, we characterize a waveguide nonlinear parameter of 7 W‑1/m and nonlinear refractive index of 3.71 × 10‑18 m2/W. GeSbS waveguides are used to generate supercontinuum from 1280 nm to 2120 nm at the ‑30 dB level. The spectrum expands along the red shifted side of the spectrum faster than on the blue shifted side, facilitated by cascaded stimulated Raman scattering arising from the large Raman gain of chalcogenides. Fourier transform infrared spectroscopic measurements show that these glasses are optically transparent up to 25 μm, making them useful for short – wave to long – wave infrared applications in both linear and nonlinear optics.

  6. Generation of λ/12 nanowires in chalcogenide glasses.

    Science.gov (United States)

    Nicoletti, Elisa; Bulla, Douglas; Luther-Davies, Barry; Gu, Min

    2011-10-12

    Nanowires have been widely studied and have gained a lot of interest in the past decade. Because of their high refractive index and high nonlinearity, chalcogenide glasses (ChGs) are a good candidate for the fabrication of photonic nanowires as such nanowaveguides provide the maximal confinement of light, enabling large enhancement of nonlinear interactions and group-velocity dispersion engineering. Here we report on the generation of λ/12 (∼68 nm) nanowires based on the theoretical and experimental study of the influence of the laser repetition rate on the direct laser fabrication in ChGs (λ = 800 nm). Through a numerical model of cumulative heating, the optimum conditions for high-resolution fabrication in As(2)S(3) are found. Nanowires with dimensions down to ∼λ/12 are for the first time successfully fabricated in ChGs. We show that the generated nanowires can be stacked to form a three-dimensional woodpile photonic crystal with a pronounced stop gap.

  7. Palladium and platinum organochalcogenolates and their transformation into metal chalcogenides

    Indian Academy of Sciences (India)

    S Dey; S Narayan; A Singhal; V K Jain

    2000-06-01

    Platinum group metal chalcogenides find extensive applications in catalysis and in the electronic industry. To develop an efficient low temperature clean preparation of these materials, molecular routes have been explored. Thus the chemistry of mononuclear organochalcogenolates of the type [M(ER 1/4)2(PR3)2], binuclear benzylselenolates, [M2Cl2(∼-SeBz)2(PR3)2], allylpalladium complexes [Pd2(μ-ER)2(3-C4H7)2] and palladium/platinum sulphido/selenido-bridged complexes, [M2(μ-E)2L4] (M = Pd or Pt; E = S, Se or Te; L = tertiary phosphine ligand) has been investigated. All the complexes have been characterized by elemental analysis, NMR (1 H, 31P, 77Se, 195Pt) spectroscopy and in some cases by X-ray diffraction. The thermal behaviour of these complexes has been studied by TGA. The pyrolysis of allylpalladium complexes in refluxing xylene yields Pd4E as established by analysis and XRD patterns.

  8. Raman spectroscopy of chalcogenide thin films prepared by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Erazu, M.; Rocca, J. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Fontana, M., E-mail: merazu@fi.uba.a [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Urena, A.; Arcondo, B. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Pradel, A. [ICG, UMR 5253 CNRS UM 2 ENSCM UM1 equipe PMDP CC3, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

    2010-04-16

    Chalcogenide glasses have many technological applications as a result of their particular optical and electrical properties. Ge-Se and Ag-Ge-Se systems were recently studied and tested as new materials for building non-volatile memories. Following these ideas, thin films of Ge-Se and Ag-Ge-Se were deposited using pulsed laser deposition (PLD). Ag was sputtered over binary films (for a composition between 0.05 and 0.25 Ag atomic fraction) and photo-diffused afterwards. Thus, three kinds of samples were analyzed by means of Raman spectroscopy, in order to provide information on the short- and medium-range order: PLD binary films before Ag doping, after Ag doping and PLD ternary films. Before Ag doping, binary films exhibited Ge-Se corner-sharing tetrahedra modes at 190 cm{sup -1}, low scattering from edge-sharing tetrahedra at 210 cm{sup -1}, and Se chains at 260 cm{sup -1} (stretching mode). However, after the diffusion process was complete, we observed an intensity reduction of bands centered at 210 cm{sup -1} and 260 cm{sup -1}. The spectra of the photo-diffused films were similar to those of films deposited using a ternary target. Relaxation effects in binary glasses were also analyzed. Results were compared with those of other authors.

  9. Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

    Institute of Scientific and Technical Information of China (English)

    李超然; 戴世勋; 张勤远; 沈祥; 王训四; 张培晴; 路来伟; 吴越豪; 吕社钦

    2015-01-01

    We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q (∼6×104) laser mode could be obtained from a 75-µm diameter microsphere that is coupled with a 1.77-µm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser.

  10. Theoretical studies on mid-infrared amplification in Ho{sup 3+}-doped chalcogenide glass fibers

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Shulin [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Yinsheng [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); The School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211 (China); Dai, Shixun, E-mail: daishixun@nbu.edu.cn [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Zhou, Yaxun [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Lin, Changgui [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); The School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211 (China); Zhang, Peiqing [Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211 (China); College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

    2013-05-01

    This paper investigated the MIR emission of Ho{sup 3+}-doped Ge{sub 20}Ga{sub 5}Sb{sub 10}S{sub 65} chalcogenide glasses upon excitation of 900 nm laser diode. The spontaneous emission probability, absorption cross-section, and emission cross-section were calculated using the Judd-Ofelt theory and the Fuchbauer–Ladenburg equation. Theoretical studies of the Ho{sup 3+}-doped chalcogenide glass fiber amplifier operating in the MIR wavelength range, specifically around the 2.86 μm wavelength, were performed based on the rate and light propagation equations. The results indicate that the chalcogenide glass fiber presented a larger signal MIR gain and wider MIR gain spectrum. The maximum signal gain was 36 dB and the gain width was 20 dB.

  11. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  12. Destructive Clustering of Metal Nanoparticles in Chalcogenide and Oxide Glassy Matrices.

    Science.gov (United States)

    Shpotyuk, M V; Shpotyuk, O I; Cebulski, J; Kozyukhin, S

    2016-12-01

    The energetic χ-criterion is developed to parameterize difference in the origin of high-order optical non-linearity associated with metallic atoms (Cu, Ag, Au) embedded destructively in oxide- and chalcogenide glasses. Within this approach, it is unambiguously proved that covalent-bonded networks of soft semiconductor chalcogenides exemplified by binary As(Ge)-S(Se) glasses differ essentially from those typical for hard dielectric oxides like vitreous silica by impossibility to accommodate pure agglomerates of metallic nanoparticles. In an excellence according to known experimental data, it is suggested that destructive clustering of nanoparticles is possible in Cu-, Ag-, and Au-ion-implanted dielectric oxide glass media, possessing a strongly negative χ-criterion. Some recent speculations trying to ascribe equally this ability to soft chalcogenide glasses despite an obvious difference in the corresponding bond dissociation energies have been disclosed and criticized as inconclusive.

  13. Precision glass molding of complex shaped chalcogenide glass lenses for IR applications

    Science.gov (United States)

    Staasmeyer, Jan-Helge; Wang, Yang; Liu, Gang; Dambon, Olaf; Klocke, Fritz

    2016-09-01

    The use of chalcogenide glass in the thermal infrared domain is an emerging alternative to commonly used crystalline materials such as germanium. The main advantage of chalcogenide glass is the possibility of mass production of complex shaped geometries with replicative processes such as precision glass molding. Thus costly single point diamond turning processes are shifted to mold manufacturing and do not have to be applied to every single lens produced. The usage of FEM-Simulation is mandatory for developing a molding process for complex e.g. non rotational symmetric chalcogenide glass lenses in order to predict the flow of glass. This talk will present state of the art modelling of the precision glass molding process for chalcogenide glass lenses, based on thermal- and mechanical models. Input data for modelling are a set of material properties of the specific chalcogenide glass in conjunction with properties of mold material and wear protective coatings. Specific properties for the mold-glass interaction such as stress relaxation or friction at the glassmold interface cannot be obtained from datasheets and must be determined experimentally. A qualified model is a powerful tool to optimize mold and preform designs in advance in order to achieve sufficient mold filling and compensate for glass shrinkage. Application of these models in an FEM-Simulation "case study" for molding a complex shaped non-rotational symmetric lens is shown. The outlook will examine relevant issues for modelling the precision glass molding process of chalcogenide glasses in order to realize scaled up production in terms of multi cavity- and wafer level molding.

  14. Rings, chains and planes: Variation of g with composition in chalcogenide glasses

    Indian Academy of Sciences (India)

    P K Thiruvikraman

    2006-08-01

    We propose a microscopic, phenomenological model for the decrease in the viscosity observed at glass transition. Our model is primarily applicable to chalcogenide glasses. According to this model, the decrease in the viscosity at glass transition is mainly due to the breaking of the Van der Waals bonds in the chalcogenides. Using this model, we derive a relationship between the glass transition temperature, g, and the molar volume m. The validity of this relation is checked using experimental data available in the literature for two binary systems (Ge–Se and As–S) and a pseudo-binary system (As40SeTe60–).

  15. I-V measurements of Ge-Se-Sn chalcogenide glassy alloys

    Directory of Open Access Journals (Sweden)

    Vandana Kumari

    2015-03-01

    Full Text Available Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20 glassy thin pellets of diameter 12 mm and thickness 1 mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300 °C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

  16. How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

    Science.gov (United States)

    Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

    2010-05-01

    Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

  17. An overview of the Fe-chalcogenide superconductors

    Science.gov (United States)

    Wu, M. K.; Wu, P. M.; Wen, Y. C.; Wang, M. J.; Lin, P. H.; Lee, W. C.; Chen, T. K.; Chang, C. C.

    2015-08-01

    This review intends to summarize recent advancements in FeSe and related systems. The FeSe and related superconductors are currently receiving considerable attention for the high critical temperature (T C) observed and for many similar features to the high T C cuprate superconductors. These similarities suggest that understanding the FeSe-based compounds could potentially help our understanding of the cuprates. We begin the review by presenting common features observed in the FeSe- and FeAs-based systems. Then we discuss the importance of careful control of the material preparation allowing for a systematic structure characterization. With this control, numerous rich phases have been observed. Importantly, we suggest that the Fe-vacancy ordered phases found in the FeSe-based compounds, which are non-superconducting magnetic Mott insulators, are the parent compounds of the superconductors. Superconductivity can emerge from the parent phases by disordering the Fe vacancy order, often by a simple annealing treatment. Then we review physical properties of the Fe chalcogenides, specifically the optical properties and angle-resolved photoemission spectroscopy (ARPES) results. From the literature, strong evidence points to the existence of orbital modification accompanied by a gap-opening, prior to the structural phase transition, which is closely related to the occurrence of superconductivity. Furthermore, strong lattice to spin coupling are important for the occurrence of superconductivity in FeSe. Therefore, it is believed that the iron selenides and related compounds will provide essential information to understand the origin of superconductivity in the iron-based superconductors, and possibly the superconducting cuprates.

  18. Static Behavior of Chalcogenide Based Programmable Metallization Cells

    Science.gov (United States)

    Rajabi, Saba

    Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization. To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities. The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior. The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of

  19. Tolerant chalcogenide cathodes of membraneless micro fuel cells.

    Science.gov (United States)

    Gago, Aldo Saul; Gochi-Ponce, Yadira; Feng, Yong-Jun; Esquivel, Juan Pablo; Sabaté, Neus; Santander, Joaquin; Alonso-Vante, Nicolas

    2012-08-01

    The most critical issues to overcome in micro direct methanol fuel cells (μDMFCs) are the lack of tolerance of the platinum cathode and fuel crossover through the polymer membrane. Thus, two novel tolerant cathodes of a membraneless microlaminar-flow fuel cell (μLFFC), Pt(x)S(y) and CoSe(2), were developed. The multichannel structure of the system was microfabricated in SU-8 polymer. A commercial platinum cathode served for comparison. When using 5 M CH(3)OH as the fuel, maximum power densities of 6.5, 4, and 0.23 mW cm(-2) were achieved for the μLFFC with Pt, Pt(x)S(y), and CoSe(2) cathodes, respectively. The Pt(x)S(y) cathode outperformed Pt in the same fuel cell when using CH(3)OH at concentrations above 10 M. In a situation where fuel crossover is 100 %, that is, mixing the fuel with the reactant, the maximum power density of the micro fuel cell with Pt decreased by 80 %. However, for Pt(x)S(y) this decrease corresponded to 35 % and for CoSe(2) there was no change in performance. This result is the consequence of the high tolerance of the chalcogenide-based cathodes. When using 10 M HCOOH and a palladium-based anode, the μLFFC with a CoSe(2) cathode achieved a maxiumum power density of 1.04 mW cm(-2). This micro fuel cell does not contain either Nafion membrane or platinum. We report, for the first time, the evaluation of Pt(x)S(y)- and CoSe(2)-based cathodes in membraneless micro fuel cells. The results suggest the development of a novel system that is not size restricted and its operation is mainly based on the selectivity of its electrodes.

  20. Localized rapid heating process for precision chalcogenide glass molding

    Science.gov (United States)

    Li, Hui; He, Peng; Yu, Jianfeng; Lee, L. James; Yi, Allen Y.

    2015-10-01

    Precision glass molding is an important process for high volume optical fabrication. However, conventional glass molding is a bulk heating process that usually requires a long thermal cycle, where molding assembly and other mechanical parts are heated and cooled together. This often causes low efficiency and other heating and cooling related problems, such as large thermal expansion in both the molds and molded optics. To cope with this issue, we developed a localized rapid heating process to effectively heat only very small part of the glass. This localized rapid heating study utilized a fused silica wafer coated with a thin graphene layer to heat only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating heat on and near the coating. The feasibility of this process was validated by both experiments and numerical simulation. To demonstrate the advantages of the localized rapid heating, both localized rapid heating process and bulk heating process were performed and carefully compared. The uniformity and quality of the molded sample by localized rapid heating process was also demonstrated. In summary, localized rapid heating process by using graphene coated fused silica wafer was characterized and can be readily implemented in replication of micro scale chalcogenide glasses. A fused silica wafer coated with a thin graphene layer was utilized for localized rapid heating only the surface of the glass. The graphene coating functions as an electrical resistant heater when a power source was applied across the thin film coating, generating high temperature on and near the coating. This process is fast and efficient since only interested areas are heated without affecting the entire glass substrate or the mold assembly. The uniformity and quality of the molded sample by localized rapid heating process was demonstrated by comparing both localized rapid heating

  1. THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

    DEFF Research Database (Denmark)

    Bao, Hualong; Markos, Christos; Nielsen, Kristian;

    2014-01-01

    In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

  2. Bandgap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides.

    Science.gov (United States)

    Niu, Shanyuan; Huyan, Huaixun; Liu, Yang; Yeung, Matthew; Ye, Kevin; Blankemeier, Louis; Orvis, Thomas; Sarkar, Debarghya; Singh, David J; Kapadia, Rehan; Ravichandran, Jayakanth

    2017-03-01

    Transition metal perovskite chalcogenides are a new class of versatile semiconductors with high absorption coefficient and luminescence efficiency. Polycrystalline materials synthesized by an iodine-catalyzed solid-state reaction show distinctive optical colors and tunable bandgaps across the visible range in photoluminescence, with one of the materials' external efficiency approaching the level of single-crystal InP and CdSe.

  3. Native metastability in chalcogenide glasses described within configuration-coordinate model

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M [Institute of Materials of Scientific Research Company ' Carat' , 202, Stryjska str., Lviv (Ukraine); Vakiv, M [Institute of Materials of Scientific Research Company ' Carat' , 202, Stryjska str., Lviv (Ukraine)

    2007-08-15

    It was created configuration-coordinate model for describing of native metastability in chalcogenide glasses. It was shown that potential should be at least triple-well. System of differential equations for describing transitions between the atomic states was made and solved within present configuration-coordinate model.

  4. Driving Oxygen Coordinated Ligand Exchange at Nanocrystal Surfaces using Trialkylsilylated Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Caldwell, Marissa A.; Albers, Aaron E.; Levy, Seth C.; Pick, Teresa E.; Cohen, Bruce E.; Helms, Brett A.; Milliron, Delia J.

    2010-11-11

    A general, efficient method is demonstrated for exchanging native oxyanionic ligands on inorganic nanocrystals with functional trimethylsilylated (TMS) chalcogenido ligands. In addition, newly synthesized TMS mixed chalcogenides leverage preferential reactivity of TMS-S bonds over TMS-O bonds, enabling efficient transfer of luminescent nanocrystals into aqueous media with retention of their optical properties.

  5. Small core Chalcogenide photonic crystal fiber for midinfrared wavelength conversion: experiment and design

    OpenAIRE

    Xing, Sida; Grassani, Davide; Kharitonov, Svyatoslav; Billat, Adrien; Brès, Camille-Sophie

    2016-01-01

    Kerr index and dispersion parameter of a small core chalcogenide photonic crystal fiber are estimated via four-wave mixing near 2μm. From these values, new fiber design is proposed to efficiently generate idlers in mid-infrared.

  6. Origin of the frequency shift of Raman scattering in chalcogenide glasses

    DEFF Research Database (Denmark)

    Han, X.C.; Tao, H.Z.; Gong, L.J.;

    2014-01-01

    Raman scattering is a sensitive method for probing the structural evolution in glasses, especially in covalent ones. Usually the main Raman scattering frequency shifts with composition for Gesingle bondSe chalcogenide glasses. However, it has not been well established whether and how the dependen...

  7. Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

    Directory of Open Access Journals (Sweden)

    Fei Zhuge

    2015-05-01

    Full Text Available It has been reported that in chalcogenide-based electrochemical metallization (ECM memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S, the metal filament grows from the cathode (e.g., Pt and W towards the anode (e.g., Cu and Ag, whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2. The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

  8. High Average Power Mid-infrared Supercontinuum Generation in a Suspended Core Chalcogenide Fiber

    DEFF Research Database (Denmark)

    Møller, Uffe Visbech; Yu, Yi; Petersen, Christian Rosenberg;

    2014-01-01

    Mid-infrared supercontinuum spanning from 2.0 to 6.1 μm is generated in a 9 cm suspended core chalcogenide fiber by pumping close to the fiber zero-dispersion wavelength at 3.5 μm with an OPA system...

  9. Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

    Science.gov (United States)

    Nessel, James; Miranda, Felix

    2013-01-01

    A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

  10. Laser annealing and defect study of chalcogenide photovoltaic materials

    Science.gov (United States)

    Bhatia, Ashish

    Cu(In,Ga)Se2 (CIGSe), CuZnSn(S,Se)4(CZTSSe), etc., are the potential chalcogenide semiconductors being investigated for next-generation thin film photovoltaics (TFPV). While the champion cell efficiency of CIGSe has exceeded 20%, CZTSSe has crossed the 10% mark. This work investigates the effect of laser annealing on CISe films, and compares the electrical characteristics of CIGSe (chalcopyrite) and CZTSe (kesterite) solar cells. Chapter 1 through 3 provide a background on semiconductors and TFPV, properties of chalcopyrite and kesterite materials, and their characterization using deep level transient spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). Chapter 4 investigates electrochemical deposition (nonvacuum synthesis) of CISe followed by continuous wave laser annealing (CWLA) using a 1064 nm laser. It is found that CWLA at ≈ 50 W/cm2 results in structural changes without melting and dewetting of the films. While Cu-poor samples show about 40% reduction in the full width at half maximum of the respective x-ray diffraction peaks, identically treated Cu-rich samples register more than 80% reduction. This study demonstrates that an entirely solid-phase laser annealing path exists for chalcopyrite phase formation and crystallization. Chapter 5 investigates the changes in defect populations after pulse laser annealing in submelting regime of electrochemically deposited and furnace annealed CISe films. DLTS on Schottky diodes reveal that the ionization energy of the dominant majority carrier defect state changes nonmonotonically from 215+/-10 meV for the reference sample, to 330+/-10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215+/-10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. Chapter 6 compares the electrical characteristics of chalcopyrite and kesterite materials. Experiments reveal CZTSe cell has an

  11. Laser induced structural transformation in chalcogenide based superlattices

    Science.gov (United States)

    Zallo, Eugenio; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella

    2016-05-01

    Superlattices made of alternating layers of nominal GeTe and Sb2Te3 have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

  12. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.

    Science.gov (United States)

    Heine, Thomas

    2015-01-20

    CONSPECTUS: After the discovery of graphene and the development of powerful exfoliation techniques, experimental preparation of two-dimensional (2D) crystals can be expected for any layered material that is known to chemistry. Besides graphene and hexagonal boron nitride (h-BN), transition metal chalcogenides (TMC) are among the most studied ultrathin materials. In particular, single-layer MoS2, a direct band gap semiconductor with ∼1.9 eV energy gap, is popular in physics and nanoelectronics, because it nicely complements semimetallic graphene and insulating h-BN monolayer as a construction component for flexible 2D electronics and because it was already successfully applied in the laboratory as basis material for transistors and other electronic and optoelectronic devices. Two-dimensional crystals are subject to significant quantum confinement: compared with their parent layered 3D material, they show different structural, electronic, and optical properties, such as spontaneous rippling as free-standing monolayer, significant changes of the electronic band structure, giant spin-orbit splitting, and enhanced photoluminescence. Most of those properties are intrinsic for the monolayer and already absent for two-layer stacks of the same 2D crystal. For example, single-layer MoS2 is a direct band gap semiconductor with spin-orbit splitting of 150 meV in the valence band, while the bilayer of the same material is an indirect band gap semiconductor without observable spin-orbit splitting. All these properties have been observed experimentally and are in excellent agreement with calculations based on density-functional theory. This Account reports theoretical studies of a subgroup of transition metal dichalcogenides with the composition MX2, with M = Mo, or W and X = Se or S, also referred to as "MoWSeS materials". Results on the electronic structure, quantum confinement, spin-orbit coupling, spontaneous monolayer rippling, and change of electronic properties in the

  13. A comprehensive review of the application of chalcogenide nanoparticles in polymer solar cells.

    Science.gov (United States)

    Freitas, Jilian N; Gonçalves, Agnaldo S; Nogueira, Ana F

    2014-06-21

    In this review the use of solution-processed chalcogenide quantum dots (CdS, CdSe, PbS, etc.) in hybrid organic-inorganic solar cells is explored. Such devices are known as potential candidates for low-cost and efficient solar energy conversion, and compose the so-called third generation solar cells. The incorporation of oxides and metal nanoparticles has also been successfully achieved in this new class of photovoltaic devices; however, we choose to explore here chalcogenide quantum dots in light of their particularly attractive optical and electronic properties. We address herein a comprehensive review of the historical background and state-of-the-art comprising the incorporation of such nanoparticles in polymer matrices. Later strategies for surface chemistry manipulation, in situ synthesis of nanoparticles, use of continuous 3D nanoparticles network (aerogels) and ternary systems are also reviewed.

  14. Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

    Directory of Open Access Journals (Sweden)

    Elnaggar A.M.

    2016-12-01

    Full Text Available It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes during the laser treatment. Nanocrystallites of CuInS2 and CuZnSnS4 (CZTS were used as chalcogenide materials. The optimization of the laser beam intensities and nanoparticle sizes were explored.

  15. Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland); Ingram, A. [Opole University of Technology, 75 Ozimska Str., Opole 45370 (Poland); Shpotyuk, M. [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv 79013 (Ukraine); Filipecki, J. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland)

    2014-11-01

    Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ{sub 2}-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

  16. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    Energy Technology Data Exchange (ETDEWEB)

    Aminorroaya Yamini, Sima, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu; Dou, Shi Xue [Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Mitchell, David R. G. [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); Wang, Heng [Materials Science, California Institute of Technology, Pasadena, CA 91125 (United States); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA 91125 (United States); Pei, Yanzhong [School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804 (China); Snyder, G. Jeffrey, E-mail: sima@uow.edu.au, E-mail: jsnyder@caltech.edu [Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, University of Wollongong, NSW 2500 (Australia); ITMO University, Saint Petersburg (Russian Federation)

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  17. Enhancing extraction efficiency of mid-infrared fluorescence in chalcogenide glass via photonic crystal

    Science.gov (United States)

    Zhang, Jun; Zhang, Peiqing; Ma, Beijiao; Dai, Shixun; Zhang, Wei; Nie, Qiuhua

    2016-04-01

    The use of rare earth-doped chalcogenide glass is an attractive method to develop mid-infrared sources. In this work, Er3+-doped chalcogenide glass is prepared, and photonic crystal (PC) pattern is designed to improve the extraction efficiency of light emission from the sample surface. The finite difference time domain simulation shows that the light extraction efficiency from the sample surface can be 1.62 times stronger than that from the sample without PC structure by introducing a simple two-dimensional (2D) PC structure into glass samples. This improvement was the result of the efficient light diffraction on the surface because of the integrated 2D PC. Results in this work offer a potential in developing midinfrared light sources.

  18. Low-power Mid-IR Supercontinuum and Rogue Wave Generation in Chalcogenide Waveguides

    CERN Document Server

    Hernandez, Santiago M; Bonetti, Juan; Grosz, Diego F

    2016-01-01

    We present numerical results of supercontinuum (SC) generation in the mid-IR spectral region, specifically addressing the molecular fingerprint window ranging from 2.5 to 25 um. By solving the Generalized Nonlinear Schr\\"odinger Equation (GNLSE) in a chalcogenide waveguide, we demonstrate low-power SC generation beyond 10 um from a pump at 5 um. Further, we investigate the short-pulse and CW regimes, and show that a simple linear dispersion profile, applicable to a broad range of chalcogenide media, is sufficient to account for the broad SC generation, and yield rich pulse dynamics leading to the frequent occurrence of rogue wave events. Results are encouraging as they point to the feasibility of producing bright and coherent light, by means of single low-power tabletop laser pumping schemes, in a spectral region that finds applications in such diverse areas as molecular spectroscopy, metrology and tomography, among others, and that is not easily addressable with other light sources

  19. A comprehensive review of the application of chalcogenide nanoparticles in polymer solar cells

    Science.gov (United States)

    Freitas, Jilian N.; Gonçalves, Agnaldo S.; Nogueira, Ana F.

    2014-05-01

    In this review the use of solution-processed chalcogenide quantum dots (CdS, CdSe, PbS, etc.) in hybrid organic-inorganic solar cells is explored. Such devices are known as potential candidates for low-cost and efficient solar energy conversion, and compose the so-called third generation solar cells. The incorporation of oxides and metal nanoparticles has also been successfully achieved in this new class of photovoltaic devices; however, we choose to explore here chalcogenide quantum dots in light of their particularly attractive optical and electronic properties. We address herein a comprehensive review of the historical background and state-of-the-art comprising the incorporation of such nanoparticles in polymer matrices. Later strategies for surface chemistry manipulation, in situ synthesis of nanoparticles, use of continuous 3D nanoparticles network (aerogels) and ternary systems are also reviewed.

  20. Trends in oxygen reduction and methanol activation on transition metal chalcogenides

    DEFF Research Database (Denmark)

    Tritsaris, Georgios; Nørskov, Jens Kehlet; Rossmeisl, Jan

    2011-01-01

    We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability...... of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated....

  1. Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

    OpenAIRE

    Elnaggar A.M.; Albassam A.; Oźga K.; Jędryka J.; Szota M.; Myronchuk G.

    2016-01-01

    It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes ...

  2. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices

    OpenAIRE

    Xiaoming Yu; John Robertson

    2016-01-01

    GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density fu...

  3. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices.

    OpenAIRE

    Yu, X.; Robertson, J

    2016-01-01

    GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density fu...

  4. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

    1997-12-31

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

  5. Radiation-induced effects in chalcogenide glasses: Topological mechanisms and application

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.I. E-mail: karat@ipm.lviv.ua

    2000-05-02

    Structural transformations in vitreous As{sub 2}S{sub 3}-based chalcogenide semiconducting glasses induced by {gamma}-irradiation have been considered on the basis of IR Fourier spectroscopy results as destruction-polymerization changes of the covalent chemical bonds, associated with specific coordination defects formation. The whole variety of these processes has been taken into account in order to construct the physically real variants of the radiation-induced structural changes.

  6. Positron lifetime study of native vacancy-like defects in chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Filipecki, J.; Shpotyuk, O.I. E-mail: shpotyuk@novas.lviv.ua; Kozdras, A.; Kovalskiy, A.P

    2003-11-01

    Modified model for positron annihilation in vitreous chalcogenide semiconductors is developed to explain a number of previously obtained results on positron lifetime measurements in glassy As-Ge-S of stoichiometric As{sub 2}S{sub 3}-GeS{sub 2} and non-stoichiometric As{sub 2}S{sub 3}-Ge{sub 2}S{sub 3} cut-sections.

  7. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    Science.gov (United States)

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  8. Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

    2015-05-15

    Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

  9. Generation of correlated photon pairs in a chalcogenide As2S3 waveguide

    CERN Document Server

    Xiong, C; Peruzzo, A; Lobino, M; Clark, A S; Choi, D -Y; Madden, S J; Natarajan, C M; Tanner, M G; Hadfield, R H; Dorenbos, S N; Zijlstra, T; Zwiller, V; Thompson, M G; Rarity, J G; Steel, M J; Luther-Davies, B; Eggleton, B J; O'Brien, J L

    2010-01-01

    We demonstrate the first 1550 nm correlated photon-pair source in an integrated glass platform-a chalcogenide As2S3 waveguide. A measured pair coincidence rate of 80 per second was achieved using 57 mW of continuous-wave pump. The coincidence to accidental ratio was shown to be limited by spontaneous Raman scattering effects that are expected to be mitigated by using a pulsed pump source.

  10. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  11. ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

    Energy Technology Data Exchange (ETDEWEB)

    Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2014-12-15

    Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

  12. High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

    Energy Technology Data Exchange (ETDEWEB)

    Bernacki, Bruce E.

    2012-10-05

    This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

  13. Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

    Science.gov (United States)

    Mao, Alvin W.

    3 to GeSe 2 results in the preferential formation of Ge-Ge bonds, which are distributed such that the clustering of ethane-like (Se3)Ge-Ge(Se3) units is avoided to the maximum extent. This behavior is entirely consistent with the continuously-alloyed structural scenario of chalcogenide glasses. However, for contents of Ga2Se3 greater than about 25--30 mol%, the avoidance of Ga-Ga and mixed Ga-Ge bonds results in the appearance of three-coordinated Se as an alternate mechanism to accommodate the Se deficiency. The addition of either Na2Se or BaSe to Ga2Se 3--GeSe2 glasses introduces an ionic bonding character to an otherwise largely covalently bonded network. As a result, the structure responds by adopting characteristics of the charge-compensated structural scenario of oxide glasses. In the stoichiometric Na2Se/BaSe--Ga 2Se3--GeSe2 glasses, the ratio of Na 2Se/BaSe:Ga2Se3 = 1 serves as a chemical threshold, where the network consists predominantly of corner-sharing (Ga/Ge)e4 tetrahedra, and the charge on the Na(Ba) cations is balanced by the GaSe4- tetrahedra. For glasses with Na 2Se/BaSe:Ga2Se3 1, the addition of Na2Se/BaSe results in the formation of non-bridging Se atoms, which break up the connectivity of the glassy network. The major difference between the modifying elements Na and Ba is that the high field strength of the Ba cation induces a higher degree of chemical disorder in the glass network. This conclusion is evidenced by the presence of some Ge-Ge bonds in BaSe--Ga2Se3--GeSe2 glasses even at the chemical threshold composition of BaSe:Ga2Se3 = 1. The structural duality of the Na2Se/BaSe--Ga2Se 3--GeSe2 system is best observed in the off-stoichiometric BaSe--Ga2Se3--GeSe2+/-Se glasses. Here, the removal of Se from a stoichiometric glass with BaSe:Ga2Se 3 > 1 results in Ge-Ge bonds, while its addition in excess of stoichiometry forms Se-Se bonds. Although such behavior is consistent with the continuously-alloyed structural model, it should be contrasted

  14. Efficient and broadband optical parametric four wave mixing in chalcogenide-PMMA hybrid microwires

    CERN Document Server

    Ahmad, Raja

    2012-01-01

    The recent development of devices based on novel nonlinear materials like chalcogenides (ChGs), silicon (Si) and other semi-conductors has revolutionized the field of nonlinear photonics [1,2,3]. Among the nonlinear effects observed in these materials, four-wave mixing (FWM) is the process that finds the most applications including wavelength conversion [4], optical regeneration [5,6], optical delay [7], time-domain demultiplexing[8], temporal cloaking[9] and negative refraction[10]. Although FWM has been observed in several media including chalcogenides [11,12,13,14], silicon[15, 16], bismuth [17] and silica [18,19], there is a continued quest for devices that realize efficient and broadband FWM while offering compactness, low-power consumption and compatibility with optical fibers. Here, we demonstrate the fabrication of 10 cm long polymer cladded chalcogenide (As2Se3) microwires to realize FWM-led sub watt threshold (70-370 mW) wavelength conversion with a 12 dB bandwidth as broad as 190 nm, and conversion...

  15. Template-directed assembly of metal-chalcogenide nanocrystals into ordered mesoporous networks.

    Energy Technology Data Exchange (ETDEWEB)

    Vamvasakis, Ioannis; Subrahmanyam, Kota S.; Kanatzidis, Mercouri G.; Armatas, Gerasimos S.

    2015-04-01

    Although great progress in the synthesis of porous networks of metal and metal oxide nanoparticles with highly accessible pore surface and ordered mesoscale pores has been achieved, synthesis of assembled 3D mesostructures of metal-chalcogenide nanocrystals is still challenging. In this work we demonstrate that ordered mesoporous networks, which comprise well-defined interconnected metal sulfide nanocrystals, can be prepared through a polymer-templated oxidative polymerization process. The resulting self-assembled mesostructures that were obtained after solvent extraction of the polymer template impart the unique combination of light-emitting metal chalcogenide nanocrystals, three-dimensional open-pore structure, high surface area, and uniform pores. We show that the pore surface of these materials is active and accessible to incoming molecules, exhibiting high photocatalytic activity and stability, for instance, in oxidation of 1-phenylethanol into acetophenone. We demonstrate through appropriate selection of the synthetic components that this method is general to prepare ordered mesoporous materials from metal chalcogenide nanocrystals with various sizes and compositions.

  16. Inorganic Thin-film Sensor Membranes with PLD-prepared Chalcogenide Glasses: Challenges and Implementation

    Directory of Open Access Journals (Sweden)

    Michael J. Schöning

    2004-10-01

    Full Text Available Abstract: Chalcogenide glasses offer an excellent “challenge” for their use and implementation in sensor arrays due to their good sensor-specific advantages in comparison to their crystalline counterparts. This paper will give an introduction on the preparation of chalcogenide glasses in the thin-film state. First, single microsensors have been prepared with the methods of semiconductor technology. In a next step, three microsensors are implemented onto one single silicon substrate to an “one chip” sensor array. Different ionselective chalcogenide glass membranes (PbSAgIAs2S3, CdSAgIAs2S3, CuAgAsSeTe and TlAgAsIS were prepared by means of the pulsed laser deposition (PLD process. The different sensor membranes and structures have been physically characterized by means of Rutherford backscattering spectrometry, scanning electron microscopy and video microscopy. The electrochemical behavior has been investigated by potentiometric measurements.

  17. Synthesis and characterization of single-source molecular precursors for the preparation of metal chalcogenides

    Indian Academy of Sciences (India)

    Vimal K Jain

    2006-11-01

    Metal chalcogenides constitute an important family of functional materials. Subtle changes in shape, size and phase of these materials result in variations in physical properties (e.g. electronic and optical), which can be exploited for various technological applications. Several strategies have evolved recently for controlling shape, size and phase of these materials. This work discusses design and synthesis of single-source molecular precursors for the preparation of metal chalcogenides both in bulk and nano-size regime. Precursors for palladium chalcogenides, indium sulphides and II-VI materials are presented. Synthesis of a variety of palladium(II)/platinum(II) complexes with internally functionalised chalcogenolate ligands, selenocarboxylates; gallium and indium dithiolate complexes and zinc/cadmium/mercury complexes with N,N'-dimethylaminoalkylselenolate ligands and their characterization by NMR and X-ray crystallography are also discussed. Data on thermal behaviour of a few representative complexes, [Pd(SeCOAr)2(PR3)2], [PdCl(E∩N)(PR3)], [InMe2(S∩S)], [In(S∩S)3] and [M(E(CH2)NMe2)2] (M = Zn, Cd, Hg; = 2 or 3) are presented.

  18. Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

    Science.gov (United States)

    Li, Chao-Ran; Dai, Shi-Xun; Zhang, Qing-Yuan; Shen, Xiang; Wang, Xun-Si; Zhang, Pei-Qing; Lu, Lai-Wei; Wu, Yue-Hao; Lv, She-Qin

    2015-04-01

    We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q (˜ 6×104) laser mode could be obtained from a 75-μm diameter microsphere that is coupled with a 1.77-μm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser. Project supported by the National Natural Science Foundation of China (Grant Nos. 61177087 and 61435009), the National Key Basic Research Program of China (Grant No. 2012CB722703), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B21007) , the K. C. Wong Magna Fund in Ningbo University, the Open Fund of the State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), China (Grant No. 2014-skllmd-01), and the Natural Science Foundation of Ningbo City, China (Grant No. 2014A610125).

  19. Mixed-metal chalcogenide tetrahedral clusters with an exo-polyhedral metal fragment.

    Science.gov (United States)

    Yuvaraj, K; Roy, Dipak Kumar; Anju, V P; Mondal, Bijnaneswar; Varghese, Babu; Ghosh, Sundargopal

    2014-12-07

    The reaction of metal carbonyl compounds with group 6 and 8 metallaboranes led us to report the synthesis and structural characterization of several novel mixed-metal chalcogenide tetrahedral clusters. Thermolysis of arachno-[(Cp*RuCO)2B2H6], 1, and [Os3(CO)12] in the presence of 2-methylthiophene yielded [Cp*Ru(CO)2(μ-H){Os3(CO)9}S], 3, and [Cp*Ru(μ-H){Os3(CO)11}], 4. In a similar fashion, the reaction of [(Cp*Mo)2B5H9], 2, with [Ru3(CO)12] and 2-methylthiophene yielded [Cp*Ru(CO)2(μ-H){Ru3(CO)9}S], 5, and conjuncto-[(Cp*Mo)2B5H8(μ-H){Ru3(CO)9}S], 6. Both compounds 3 and 5 can be described as 50-cve (cluster valence electron) mixed-metal chalcogenide clusters, in which a sulfur atom replaces one of the vertices of the tetrahedral core. Compounds 3 and 5 possess a [M3S] tetrahedral core, in which the sulfur is attached to an exo-metal fragment, unique in the [M3S] metal chalcogenide tetrahedral arrangements. All the compounds have been characterized by mass spectrometry, IR, and (1)H, (11)B and (13)C NMR spectroscopy in solution, and the solid state structures were unequivocally established by crystallographic analysis of compounds 3, 5 and 6.

  20. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    Science.gov (United States)

    Virk, Naunidh; Yazyev, Oleg V.

    2016-02-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures.

  1. Chemical Control of Plasmons in Metal Chalcogenide and Metal Oxide Nanostructures.

    Science.gov (United States)

    Mattox, Tracy M; Ye, Xingchen; Manthiram, Karthish; Schuck, P James; Alivisatos, A Paul; Urban, Jeffrey J

    2015-10-14

    The field of plasmonics has grown to impact a diverse set of scientific disciplines ranging from quantum optics and photovoltaics to metamaterials and medicine. Plasmonics research has traditionally focused on noble metals; however, any material with a sufficiently high carrier density can support surface plasmon modes. Recently, researchers have made great gains in the synthetic (both intrinsic and extrinsic) control over the morphology and doping of nanoscale oxides, pnictides, sulfides, and selenides. These synthetic advances have, collectively, blossomed into a new, emerging class of plasmonic metal chalcogenides that complement traditional metallic materials. Chalcogenide and oxide nanostructures expand plasmonic properties into new spectral domains and also provide a rich suite of chemical controls available to manipulate plasmons, such as particle doping, shape, and composition. New opportunities in plasmonic chalcogenide nanomaterials are highlighted in this article, showing how they may be used to fundamentally tune the interaction and localization of electromagnetic fields on semiconductor surfaces in a way that enables new horizons in basic research and energy-relevant applications.

  2. Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

    Directory of Open Access Journals (Sweden)

    Yongfeng Tong

    2016-02-01

    Full Text Available This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon–chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon–chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules.

  3. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    Science.gov (United States)

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-01-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2). PMID:26931353

  4. Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

    Science.gov (United States)

    Virk, Naunidh; Yazyev, Oleg V.

    2016-01-01

    Binary bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of the constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures. PMID:26847409

  5. Fabrication of an IR hollow-core Bragg fiber based on chalcogenide glass extrusion

    Science.gov (United States)

    Zhu, Minming; Wang, Xunsi; Pan, Zhanghao; Cheng, Ci; Zhu, Qingde; Jiang, Chen; Nie, Qiuhua; Zhang, Peiqing; Wu, Yuehao; Dai, Shixun; Xu, Tiefeng; Tao, Guangming; Zhang, Xianghua

    2015-05-01

    The theoretical analysis and experimental preparation of a hollow-core Bragg fiber based on chalcogenide glasses are demonstrated. The fiber has potential applications in bio-sensing and IR energy transmission. Two chalcogenide glasses with, respectively, high and low refractive indexes are investigated in detail for the fabrication of hollow-core Bragg fibers. The most appropriate structure is selected; this structure is composed of four concentric rings and a center air hole . Its band gap for the Bragg fiber is analyzed by the plane wave method. The chalcogenide glasses Ge15Sb20S58.5I13 and Ge15Sb10Se75 are chosen to extrude the robust multi-material glass preform with a specialized punch and glass container. The glass preform is simultaneously protected with a polyetherimide polymer. The hollow-core Bragg fibers are finally obtained after glass preform extrusion, fiber preform fabrication, and fiber drawing. Results showed that the fiber has a transparency window from 2.5 to 14 μm, including a low-loss transmission window from 10.5 to 12 μm. The location of this low-loss transmission window matches the predicted photonic band gap in the simulation.

  6. Ultrafast Microwave Nano-manufacturing of Fullerene-Like Metal Chalcogenides

    Science.gov (United States)

    Liu, Zhen; Zhang, Lin; Wang, Ruigang; Poyraz, Selcuk; Cook, Jonathan; Bozack, Michael J.; Das, Siddhartha; Zhang, Xinyu; Hu, Liangbing

    2016-03-01

    Metal Chalcogenides (MCs) have emerged as an extremely important class of nanomaterials with applications ranging from lubrication to energy storage devices. Here we report our discovery of a universal, ultrafast (60 seconds), energy-efficient, and facile technique of synthesizing MC nanoparticles and nanostructures, using microwave-assisted heating. A suitable combination of chemicals was selected for reactions on Polypyrrole nanofibers (PPy-NF) in presence of microwave irradiation. The PPy-NF serves as the conducting medium to absorb microwave energy to heat the chemicals that provide the metal and the chalcogenide constituents separately. The MCs are formed as nanoparticles that eventually undergo a size-dependent, multi-stage aggregation process to yield different kinds of MC nanostructures. Most importantly, this is a single-step metal chalcogenide formation process that is much faster and much more energy-efficient than all the other existing methods and can be universally employed to produce different kinds of MCs (e.g., MoS2, and WS2).

  7. Structure and optical properties of CdSe chalcogenide semiconductors

    Science.gov (United States)

    Ganaie, Mohsin; Prince, Zulfequar, M.

    2015-08-01

    CdSe bulk sample has been prepared by melt-quenching technique and were characterized with XRD, SEM, FTIR, and electrical measurements. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of 10-6 Torr. An XRD measurement reveals the coexistence of glassy and crystalline phase in bulk sample. SEM studies shows single phase, porous, and granular surface morphology of powder CdSe alloy. Optical properties (optical gap, absorption coefficient, extinction coefficient, refractive index) are calculated in the range of 190-1100nm. Analysis of the optical measurement shows that the non-direct transition is predominant and the band gap come outs to be 1.751eV. Dc conductivity measurement is thermally activated process which shows the semiconducting nature of the sample having activation energy 0.31eV.

  8. Aluminum alloy

    Science.gov (United States)

    Blackburn, Linda B. (Inventor); Starke, Edgar A., Jr. (Inventor)

    1989-01-01

    This invention relates to aluminum alloys, particularly to aluminum-copper-lithium alloys containing at least about 0.1 percent by weight of indium as an essential component, which are suitable for applications in aircraft and aerospace vehicles. At least about 0.1 percent by weight of indium is added as an essential component to an alloy which precipitates a T1 phase (Al2CuLi). This addition enhances the nucleation of the precipitate T1 phase, producing a microstructure which provides excellent strength as indicated by Rockwell hardness values and confirmed by standard tensile tests.

  9. Novel methanol-tolerant Ir-S/C chalcogenide electrocatalysts for oxygen reduction in DMFC fuel cell

    Institute of Scientific and Technical Information of China (English)

    Jingyu Ma; Desheng Ai; Xiaofeng Xie; Jianwei Guo

    2011-01-01

    Novel methanol-tolerant oxygen-reduction catalysts, iridium-sulphur (Ir-S) chalcogenides with differ ent Ir/S atomic ratios, were synthesized via a precipitation method using H21rCI6 and Na2SO3 as the Ir and S precursors. Powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the IrxSl-x/C chalcogenide catalysts. Particle size ranging from 2.5 to 2.8 nm though obvious agglomeration was found on carbon support. However, these chalcogenide catalysts showed strong catalytic activity towards the oxygen reduction reaction (ORR) and high methanol tolerance, strongly suggesting these novel catalysts as promising candidates for direct methanol fuel cell (DMFC) cathode applications.

  10. Thin film chemical sensors based on chalcogenide glasses for ''electronic tongue'' application

    Energy Technology Data Exchange (ETDEWEB)

    Mourzina, Yu.; Legin, A.V.; Vlasov, Yu.G. [Sankt-Peterburgskij Univ., St. Petersburg (Russian Federation). Kafedra Khimii; Schoening, M.J. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz]|[Univ. of Applied Sciences Aachen, Juelich (Germany); Schubert, J.; Zander, W.; Lueth, H. [Forschungszentrum Juelich GmbH (Germany). Abt. Sicherheit und Strahlenschutz

    2001-07-01

    A novel thin film preparation method, a pulsed laser deposition (PLD) technique, has been used in the present investigation to realise thin film chalcogenide layers for chemical sensor membranes. This technique is compatible with silicon technology and was aimed at fabrication of primary devices for analytical microsystems for the needs of fast analysis and in-situ measurements. The combination of the new type of the potentiometric thin film sensor array based on chalcogenide glass materials and artificial neural network for the experimental data processing is also presented. (orig.)

  11. Compositional trends of γ-induced optical changes observed in chalcogenide glasses of binary As-S system

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M.; Shpotyuk, O.; Golovchak, Roman; McCloy, John S.; Riley, Brian J.

    2014-01-23

    Compositional trends of γ-induced optical changes in chalcogenide glasses are studied with the binary As-S system. Effects of γ-irradiation and annealing are compared using the changes measured in the fundamental optical absorption edge region. It is shown that annealing near the glass transition temperature leads to bleaching of As-S glasses, while γ-irradiation leads to darkening; both depend on the glass composition and thermal history of the specimens. These results are explained in terms of competitive destruction–polymerization transformations and physical aging occurring in As-S chalcogenide glasses under the influence of γ-irradiation.

  12. A First Step Towards a Microfabricated Thin-Film Sensor Array on the Basis of Chalcogenide Glass Materials

    Directory of Open Access Journals (Sweden)

    Michael J. Schöning

    2002-09-01

    Full Text Available A first step towards a microfabricated potentiometric thin-film sensor array for the simultaneous detection of Pb2+, Cd2+ and Cu2+ has been realized. The sensitive layers used are on the basis of chalcogenide glass materials. These thin-film chalcogenide glass materials that consist of mixtures of Pb-Ag-As-I-S, Cd-Ag-As-I-S or Cu-Ag-As-Se have been prepared by pulsed laser deposition technique. The developed sensor array has been physically characterized by means of scanning electron microscopy and Rutherford backscattering spectrometry. The electrochemical sensor characterization has been performend by potentiometric measurements.

  13. Characterization of Atomic Structure, Relaxation and Phase Transformation Mechanisms in Bulk and Thin Film Amorphous Chalcogenides and Gallium Antimonide

    Science.gov (United States)

    Edwards, Trenton Gerard

    This dissertation details the characterization of the atomic structure, relaxation processes and phase transformation mechanisms in a variety of chalcogenide (selenides and tellurides) and other non-oxide (Ga-Sb alloys) glasses which are highly relevant to optoelectronic and phase change memory applications. One of the principal goals of these studies is to develop a fundamental, atomistic understanding of the structure-property relationships in these materials. Variable temperature Raman spectroscopy is used to the study the structure and its temperature dependent relaxation in GexSe100-x glasses and supercooled liquids with x ≤ 33.33 %. It is shown that the compositional dependence of the relative fractions of the edge- and corner-shared GeSe4 tetrahedra is fully consistent with a structural model based on random connectivity between the tetrahedral and chain elements. Temperature-dependent structural changes involve a progressive conversion of edge-shared to corner shared GeSe4 tetrahedra with decreasing equilibration temperature. The time scale of this structural conversion agrees with both enthalpy and shear relaxation near the glass transition. The temperature dependent change in the edge- vs. corner- sharing tetrahedral speciation is shown to be related to the production of configurational entropy, indicating a connection between structural relaxation, configurational entropy, and viscous flow. A combination of Raman and 77Se nuclear magnetic resonance (NMR) spectroscopy is applied to study the structure of a series of Se-deficient GexSe100-x glasses, with 42 ≥ x ≥ 33.33. Considerable violation of chemical order in the nearest-neighbor coordination environments of the constituent atoms is observed in the stoichiometric GeSe2 glass. On the other hand, the presence of a random distribution of Ge-Ge bonds can be inferred in the Se-deficient glasses. Furthermore, the results of this study conclusively indicate that the structure of these glasses is

  14. Electrical Resistance Alloys and Low-Expansion Alloys

    DEFF Research Database (Denmark)

    Kjer, Torben

    1996-01-01

    The article gives an overview of electrical resistance alloys and alloys with low thermal expansion. The electrical resistance alloys comprise resistance alloys, heating alloys and thermostat alloys. The low expansion alloys comprise alloys with very low expansion coefficients, alloys with very low...

  15. Widely tunable second-harmonic generation in a chalcogenide-tellurite hybrid optical fiber.

    Science.gov (United States)

    Cheng, Tonglei; Gao, Weiqing; Kawashima, Hiroyasu; Deng, Dinghuan; Liao, Meisong; Matsumoto, Morio; Misumi, Takashi; Suzuki, Takenobu; Ohishi, Yasutake

    2014-04-01

    When a chalcogenide-tellurite hybrid optical fiber with a high refractive index difference Δn=0.24 is pumped by an optical parametric oscillator with a pump wavelength from 1700 to 3000 nm, widely tunable second-harmonic generation (SHG) from 850 to 1502 nm is obtained. The observation of SHG is primarily due to the surface nonlinearity polarization at the core-cladding interface and the second-harmonic signal remains stable at the maximal level throughout the laser pulse irradiation.

  16. Theory of Two-Magnon Raman Scattering in Iron Pnictides and Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C. C.

    2011-08-15

    Although the parent iron-based pnictides and chalcogenides are itinerant antiferromagnets, the use of local moment picture to understand their magnetic properties is still widespread. We study magnetic Raman scattering from a local moment perspective for various quantum spin models proposed for this new class of superconductors. These models vary greatly in the level of magnetic frustration and show a vastly different two-magnon Raman response. Light scattering by two-magnon excitations thus provides a robust and independent measure of the underlying spin interactions. In accord with other recent experiments, our results indicate that the amount of magnetic frustration in these systems may be small.

  17. Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators.

    Science.gov (United States)

    Lin, Hongtao; Li, Lan; Zou, Yi; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kozacik, Stephen; Murakowski, Maciej; Prather, Dennis; Lin, Pao T; Singh, Vivek; Agarwal, Anu; Kimerling, Lionel C; Hu, Juejun

    2013-05-01

    We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2×10(5) at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.

  18. Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O, E-mail: shpotyukmy@yahoo.com [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 212, Stryjska str., Lviv, 79031 (Ukraine)

    2011-04-01

    New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As{sub 2}S{sub 3}){sub 100-x}(Sb{sub 2}S{sub 3}){sub x} ChG.

  19. Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

    2007-03-15

    Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Radiation-induced defects formation in Bi-containing vitreous chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

    1997-12-01

    Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

  1. Application of positron annihilation lifetime technique for {gamma}-irradiation stresses study in chalcogenide vitreous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O.; Golovchak, R.; Kovalskiy, A. [Scientific Research Company ' ' Carat' ' , Stryjska str. 20279031 Lviv (Ukraine); Filipecki, J.; Hyla, M. [Physics Institute, Pedagogical University, Al. Armii Krajowej 13/1542201 Czestochowa (Poland)

    2002-08-01

    The influence of {gamma}-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and {gamma}-induced open volume defects. It is concluded that after {gamma}-irradiation of investigated materials the {gamma}-induced microvoids based on S{sub 1}{sup -}, As{sub 2}{sup -}, and Ge{sub 3}{sup -} coordination defects play the major role in positron annihilation processes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  2. Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

    Energy Technology Data Exchange (ETDEWEB)

    Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

    2007-04-15

    A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

  3. The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Carey, John J.; Allen, Jeremy P. [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Watson, Graeme W., E-mail: watsong@tcd.ie [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland)

    2014-05-01

    In this study, density functional theory is used to evaluate the electronic structure of the antimony chalcogenide series. Analysis of the electronic density of states and charge density shows that asymmetric density, or ‘lone pairs’, forms on the Sb{sup III} cations in the distorted oxide, sulphide and selenide materials. The asymmetric density progressively weakens down the series, due to the increase in energy of valence p states from O to Te, and is absent for Sb{sub 2}Te{sub 3}. The fundamental and optical band gaps were calculated and Sb{sub 2}O{sub 3}, Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have indirect band gaps, while Sb{sub 2}Te{sub 3} was calculated to have a direct band gap at Γ. The band gaps are also seen to reduce from Sb{sub 2}O{sub 3} to Sb{sub 2}Te{sub 3}. The optical band gap for Sb{sub 2}O{sub 3} makes it a candidate as a transparent conducting oxide, while Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have suitable band gaps for thin film solar cell absorbers. - Graphical abstract: A schematic illustrating the interaction between the Sb{sup III} cations and the chalcogenide anions and the change in their respective energy levels down the series. - Highlights: • The electronic structure of the antimony chalcogenide series is modelled using DFT. • Asymmetric density is present on distorted systems and absent on the symmetric telluride system. • Asymmetric density is formed from the mixing of Sb 5s and anion p states, where the anti-bonding combination is stabilised by the Sb 5p states. • The asymmetric density weakens down the series due to the increase in energy of chalcogenide p states. • The increase in energy of the anion p states reduces the fundamental and optical band gaps.

  4. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method

    Institute of Scientific and Technical Information of China (English)

    LIU Bo; SONG Zhi-Tang; FENG Song-Lin; CHEN Bomy

    2004-01-01

    A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2 Te5 phase change film and the top electrode film is about 600nm (diameter) and the contact area is calculated to be 0.28pm2. The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory. The minimum threshold current of about 0.6mA is obtained.

  5. Broadband terahertz spectroscopy of chalcogenide glass As30Se30Te40

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romonova, Elena A.; Abdel-Moneim, Nabil

    2016-01-01

    Broadband terahertz time domain spectroscopy (THz-TDS) and time resolved terahertz spectroscopy (TRTS) were performed on a 54 μm thick chalcogenide glass (As30Se30Te40) sample using a two-color laser induced air plasma THz system in transmission and reflection configurations, respectively. Two...... absorption modes were observed at 2–3 THz and 5–8 THz. The photo-induced conductivity can be well described by the Drude-Smith conductivity model, which shows significant carrier localization effects. A fast refractive index change was observed 100 fs before the conductivity reached its maximum with two...

  6. Observation of nonlinear thermal optical dynamics in a chalcogenide nanobeam cavity

    CERN Document Server

    Sun, Yue; Choi, Duk-Yong; Sukhorukov, Andrey A

    2016-01-01

    We present a theoretical and experimental analysis of nonlinear thermo-optic effects in suspended chalcogenide glass nanobeam cavities. We measure the power dependent resonance peaks and characterise the dynamic nonlinear thermo-optic response of the cavity under modulated light input. Several distinct nonlinear characteristics are identified, including a modified spectral response containing periodic fringes, a critical wavelength jump and saturated time delay for modulation frequency faster than the thermal characteristic time. We reveal that the coupling to a parasitic Fabry-Perot cavity enables isolated thermal equilibrium states resulting in the discontinuous thermo-optic critical point.

  7. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

    Institute of Scientific and Technical Information of China (English)

    LIU Bo; FENG Gao-Ming; WU Liang-Cai; SONG Zhi-Tang; LIU Qi-Bin; FENG Song-Lin; CHEN Bomy

    2007-01-01

    @@ In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.

  8. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting

    Science.gov (United States)

    Li, Kexue; Liu, Lei; Yu, Peter Y.; Chen, Xiaobo; Shen, D. Z.

    2016-05-01

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

  9. Identification of Abnormal Phase and its Formation Mechanism in Synthesizing Chalcogenide Films

    Science.gov (United States)

    Liu, Kegao; Ji, Nianjing; Xu, Yong; Liu, Hong

    2016-09-01

    Chalcogenide films can be used in thin-film solar cells due to their high photoelectric conversion efficiencies. It was difficult to identify one abnormal phase with high X-ray diffraction (XRD) intensity and preferred orientation in the samples for preparing chalcogenide films by spin-coating and co-reduction on soda-lime glass (Na2OṡCaOṡ6SiO2) substrates. The raw materials and reductant are metal chlorides and hydrazine hydrate respectively. In order to identify this phase, a series of experiments were done under different conditions. The phases of obtained products were analyzed by XRD and the size and morphology were characterized by scanning electron microscope (SEM) and atomic force microscopy (AFM). From the experimental results, first it was proved that the abnormal phase was water-soluble by water immersion experiment, then it was identified as NaCl crystal through XRD, energy dispersive spectrometer (EDS) and SEM. The cubic NaCl crystals have high crystallinity with size lengths of about 0.5-2μm and show a preferred orientation. The reaction mechanism of NaCl crystal was proposed as follows: The NaCl crystal was formed by reaction of Na2O and HCl in a certain experimental conditions.

  10. Crystal symmetry breaking and vacancies in colloidal lead chalcogenide quantum dots

    Science.gov (United States)

    Bertolotti, Federica; Dirin, Dmitry N.; Ibáñez, Maria; Krumeich, Frank; Cervellino, Antonio; Frison, Ruggero; Voznyy, Oleksandr; Sargent, Edward H.; Kovalenko, Maksym V.; Guagliardi, Antonietta; Masciocchi, Norberto

    2016-09-01

    Size and shape tunability and low-cost solution processability make colloidal lead chalcogenide quantum dots (QDs) an emerging class of building blocks for innovative photovoltaic, thermoelectric and optoelectronic devices. Lead chalcogenide QDs are known to crystallize in the rock-salt structure, although with very different atomic order and stoichiometry in the core and surface regions; however, there exists no convincing prior identification of how extreme downsizing and surface-induced ligand effects influence structural distortion. Using forefront X-ray scattering techniques and density functional theory calculations, here we have identified that, at sizes below 8 nm, PbS and PbSe QDs undergo a lattice distortion with displacement of the Pb sublattice, driven by ligand-induced tensile strain. The resulting permanent electric dipoles may have implications on the oriented attachment of these QDs. Evidence is found for a Pb-deficient core and, in the as-synthesized QDs, for a rhombic dodecahedral shape with nonpolar {110} facets. On varying the nature of the surface ligands, differences in lattice strains are found.

  11. Nanostructured metal chalcogenides: synthesis, modification, and applications in energy conversion and storage devices.

    Science.gov (United States)

    Gao, Min-Rui; Xu, Yun-Fei; Jiang, Jun; Yu, Shu-Hong

    2013-04-07

    Advanced energy conversion and storage (ECS) devices (including fuel cells, photoelectrochemical water splitting cells, solar cells, Li-ion batteries and supercapacitors) are expected to play a major role in the development of sustainable technologies that alleviate the energy and environmental challenges we are currently facing. The successful utilization of ECS devices depends critically on synthesizing new nanomaterials with merits of low cost, high efficiency, and outstanding properties. Recent progress has demonstrated that nanostructured metal chalcogenides (MCs) are very promising candidates for efficient ECS systems based on their unique physical and chemical properties, such as conductivity, mechanical and thermal stability and cyclability. In this review, we aim to provide a summary on the liquid-phase synthesis, modifications, and energy-related applications of nanostructured metal chalcogenide (MC) materials. The liquid-phase syntheses of various MC nanomaterials are primarily categorized with the preparation method (mainly 15 kinds of methods). To obtain optimized, enhanced or even new properties, the nanostructured MC materials can be modified by other functional nanomaterials such as carbon-based materials, noble metals, metal oxides, or MCs themselves. Thus, this review will then be focused on the recent strategies used to realize the modifications of MC nanomaterials. After that, the ECS applications of the MC/modified-MC nanomaterials have been systematically summarized based on a great number of successful cases. Moreover, remarks on the challenges and perspectives for future MC research are proposed (403 references).

  12. Structural and electronic properties of high pressure phases of lead chalcogenides

    Science.gov (United States)

    Petersen, John; Scolfaro, Luisa; Myers, Thomas

    2012-10-01

    Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

  13. Random free energy barrier hopping model for ac conduction in chalcogenide glasses

    Science.gov (United States)

    Murti, Ram; Tripathi, S. K.; Goyal, Navdeep; Prakash, Satya

    2016-03-01

    The random free energy barrier hopping model is proposed to explain the ac conductivity (σac) of chalcogenide glasses. The Coulomb correlation is consistently accounted for in the polarizability and defect distribution functions and the relaxation time is augmented to include the overlapping of hopping particle wave functions. It is observed that ac and dc conduction in chalcogenides are due to same mechanism and Meyer-Neldel (MN) rule is the consequence of temperature dependence of hopping barriers. The exponential parameter s is calculated and it is found that s is subjected to sample preparation and measurement conditions and its value can be less than or greater than one. The calculated results for a - Se, As2S3, As2Se3 and As2Te3 are found in close agreement with the experimental data. The bipolaron and single polaron hopping contributions dominates at lower and higher temperatures respectively and in addition to high energy optical phonons, low energy optical and high energy acoustic phonons also contribute to the hopping process. The variations of hopping distance with temperature is also studied. The estimated defect number density and static barrier heights are compared with other existing calculations.

  14. Investigation of Optical Nonlinearities in Bi-Doped Se-Te Chalcogenide Thin Films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-03-01

    The present paper reports the nonlinear optical properties of chalcogenide Se85- x Te15Bi x (0 ≤ x ≤ 5) thin films. The formulation proposed by Boling, Fournier, and Snitzer and Tichy and Ticha has been used to compute the nonlinear refractive index n 2. The two-photon absorption coefficient β 2, and first- and third-order susceptibilities [ χ (1) and χ (3)] are also reported. The nonlinear refractive index n 2 is well correlated with the linear refractive index n and Wemple-DiDomenico (WDD) parameters, in turn depending on the density ρ and molar volume V m of the system. The density of the system is calculated experimentally by using Archimedes' principle. The linear optical parameters, viz. n, WDD parameters, and optical bandgap E g, are measured experimentally using ellipsometric curves obtained by spectrophotometry. The composition-dependent behavior of n 2 is analyzed on the basis of various parameters, viz. density, bond distribution, cohesive energy (CE), and optical bandgap E g, of the system. The variation of n 2 and β 2 with changing bandgap E g is also reported. The values of n 2 and χ (3) of the investigated chalcogenides are compared with those of pure silica, oxide, and other Se-based glasses.

  15. Photonic Bandgap Propagation in All-Solid Chalcogenide Microstructured Optical Fibers

    Directory of Open Access Journals (Sweden)

    Celine Caillaud

    2014-08-01

    Full Text Available An original way to obtain fibers with special chromatic dispersion and single-mode behavior is to consider microstructured optical fibers (MOFs. These fibers present unique optical properties thanks to the high degree of freedom in the design of their geometrical structure. In this study, the first all-solid all-chalcogenide MOFs exhibiting photonic bandgap transmission have been achieved and optically characterized. The fibers are made of an As38Se62 matrix, with inclusions of Te20As30Se50 glass that shows a higher refractive index (n = 2.9. In those fibers, several transmission bands have been observed in mid infrared depending on the geometry. In addition, for the first time, propagation by photonic bandgap effect in an all-chalcogenide MOF has been observed at 3.39 µm, 9.3 µm, and 10.6 µm. The numerical simulations based on the optogeometric properties of the fibers agree well with the experimental characterizations.

  16. Mid-gap phenomena in chalcogenide glasses and barrier-cluster-heating model

    Energy Technology Data Exchange (ETDEWEB)

    Banik, Ivan, E-mail: ivan.banik@stuba.sk; Kubliha, Marián; Lukovičová, Jozefa; Pavlendová, Gabriela [Faculty of Civil Engineering, Slovak University of Technology, 813 68 Bratislava (Slovakia)

    2015-12-07

    The physical mechanism of photoluminescence spectrum formation of chalcogenide glasses (CHG) belongs to the important unsolved problems in physics of non-crystalline materials. Photoluminescence is an important means of the electron spectrum investigation. PL spectrum in CHG is produced mostly in the middle of the band gap, and its profile is normal - Gaussian. Several features of PL spectra in CHG is still a great mystery. The aim of the paper is to make reader acquainted with the new insight into the problem. In this article we also deal with the issue of clarifying the nature of mid-gap absorption. From the experiments it is known that after excitation of the glass As{sub 2}S{sub 3} (or As{sub 2}Se{sub 3}) with primary radiation from Urbach-tail region the glass will be able to absorb the photons of low energy (IR) radiation from mid-gap region of spectra. This low photon absorption without action of the primary excitation radiation of the higher photon energy is impossible. Mid-gap absorption yields boost in the photoluminescence. The paper gives the reader the new insights into some, until now, unexplained effects and contexts in chalcogenide glasses from the position of barrier-cluster-heating model.

  17. Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films

    Science.gov (United States)

    Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben

    2015-11-01

    Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1-xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1-xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1-xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1-xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1-xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C-320 °C) on MgO using PLD. This offers a broad scope of various applications.

  18. Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

    Science.gov (United States)

    Simonds, Brian J.; Meadows, Helene J.; Misra, Sudhajit; Ferekides, Christos; Dale, Phillip J.; Scarpulla, Michael A.

    2015-01-01

    We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and Cu(In,Ga)S] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with Cu(In,Ga)S to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuous-wave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed.

  19. Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

    Science.gov (United States)

    Chen, Yubin; Feng, Xiaoyang; Liu, Maochang; Su, Jinzhan; Shen, Shaohua

    2016-09-01

    Photoelectrochemical (PEC) water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, Ga)Se2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

  20. High-Performance, High-Index-Contrast Chalcogenide Glass Photonics on Silicon and Unconventional Non-planar Substrates

    CERN Document Server

    Zou, Yi; Lin, Hongtao; Li, Lan; Moreel, Loise; Zhou, Jie; Du, Qingyang; Ogbuu, Okechukwu; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Dobson, Kevin D; Birkmire, Robert; Hu, Juejun

    2013-01-01

    This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-index-contrast photonic structures on both silicon and plastic substrates. The fabrication technique combines low-temperature chalcogenide glass film deposition and resist-free single-step thermal nanoimprint to process low-loss (1.6 dB/cm), sub-micron single-mode waveguides with a smooth surface finish using simple contact photolithography. Using this approach, the first chalcogenide glass micro-ring resonators are fabricated by thermal nanoimprint. The devices exhibit an ultra-high quality-factor of 400,000 near 1550 nm wavelength, which represents the highest value reported in chalcogenide glass micro-ring resonators. Furthermore, sub-micron nanoimprint of chalcogenide glass films on non-planar plastic substrates is demonstrated, which establishes the method as a facile route for monolithic fabrication of high-index-contrast devices on a wide array of unconventional substrates.

  1. Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

    Directory of Open Access Journals (Sweden)

    Chen Yubin

    2016-09-01

    Full Text Available Photoelectrochemical (PEC water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, GaSe2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

  2. Application of photo-doping phenomenon in amorphous chalcogenide GeS2 film to optical device

    Science.gov (United States)

    Murakami, Yoshihisa; Arai, Katsuya; Wakaki, Moriaki; Shibuya, Takehisa; Shintaku, Toshihiro

    2015-03-01

    Photodoping phenomenon is observed when a double-layer consisting of an amorphous chalcogenide film (As2S3, GeS2, GeSe2 etc.) and a metal (Ag, Cu etc.) film is illuminated by light. The metal diffuses abnormally into the amorphous chalcogenide layer. Amorphous chalcogenide films of GeS2 with an Ag over layer exhibited large increase of refractive index through the abnormal doping of Ag by irradiating the light around the absorption edge of the GeS2 chalcogenide. In this study, we aimed the application of this effect for the fabrication of optical devices and fabricated various micro doped patterns by using a laser beam. Mask less pattering with refractive index modified films are possible by manipulating the scanning of the laser beam. Micro gratings were fabricated using a confocal laser microscope to work as both fabrication and observation system. Waveguides were also fabricated by scanning the laser beam for photodoping. Holographic gratings were fabricated by utilizing the photodoping of the two beam interference pattern, which showed the possibility to produce large scale optical devices or mass production.

  3. Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

    Science.gov (United States)

    Nolas, George S.; Hassan, M. Shafiq; Dong, Yongkwan; Martin, Joshua

    2016-10-01

    Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn2InTe4 and CuCd2InTe4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn2InSe4. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

  4. Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

    KAUST Repository

    San-Román-Alerigi, Damián P.

    2013-01-01

    In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

  5. Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

    Directory of Open Access Journals (Sweden)

    P. Bia

    2012-01-01

    Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

  6. Ultrabroadband, Midinfrared Supercontinuum Generation in Dispersion Engineered As2Se3-Based Chalcogenide Photonic Crystal Fibers

    Directory of Open Access Journals (Sweden)

    Rim Cherif

    2013-01-01

    Full Text Available Small core As2Se3-based photonic crystal fibers (PCFs are accurately characterized for compact, high power, ultrabroadband, and coherent supercontinuum generation within few millimeters fiber length. Bandwidths of ~5.3 μm, 5 μm, and 3.2 μm were calculated for hole-to-hole spacings Λ= 3.5 μm, 4.5 μm, and 5.5 μm, respectively. The spectral broadening in the chalcogenide PCF is mainly caused by self-phase modulation and Raman-induced soliton self-frequency shift. The results show that small core As2Se3 PCFs are a promising candidate for mid-IR SCG up to ~8 μm.

  7. Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices

    Science.gov (United States)

    Yu, Xiaoming; Robertson, John

    2016-11-01

    GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density functional calculations are used to describe the stability of various types of intra-layer disorder, how the block heights can vary by means of SbTe-based stacking faults and using a vacancy-mediated kink motion, and also to understand the nature of the switching process in more chemically disordered CSLs.

  8. Modeling of switching mechanism in GeSbTe chalcogenide superlattices

    Science.gov (United States)

    Yu, Xiaoming; Robertson, John

    2015-07-01

    We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov state. Model 2 proposes a switch between Petrov and Inverted Petrov states. For each case, we note that the main transition is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motion of GeTe sublayer to the final, low energy structure. Through calculating energy barriers, the rate-determining step is the displacive transition.

  9. Chalcogenide glass planar MIR couplers for future chip based Bracewell interferometers

    CERN Document Server

    Goldsmith, Harry-Dean Kenchington; Ireland, Michael; Ma, Pan; Tuthill, Peter; Eggleton, Ben; Lawrence, John S; Debbarma, Sukanta; Luther-Davies, Barry; Madden, Stephen J

    2016-01-01

    Photonic integrated circuits are established as the technique of choice for a number of astronomical processing functions due to their compactness, high level of integration, low losses, and stability. Temperature control, mechanical vibration and acoustic noise become controllable for such a device enabling much more complex processing than can realistically be considered with bulk optics. To date the benefits have mainly been at wavelengths around 1550 nm but in the important Mid-Infrared region, standard photonic chips absorb light strongly. Chalcogenide glasses are well known for their transparency to beyond 10000 nm, and the first results from coupler devices intended for use in an interferometric nuller for exoplanetary observation in the Mid-Infrared L band (3800-4200 nm) are presented here showing that suitable performance can be obtained both theoretically and experimentally for the first fabricated devices operating at 4000 nm.

  10. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  11. Ultra-large Mode Area Microstructured Core Chalcogenide Fiber Design for Mid-IR Beam Delivery

    CERN Document Server

    Barh, Ajanta; Varshney, R K; Pal, Bishnu P

    2013-01-01

    An all solid large modearea (LMA) chalcogenide based microstructured core optical fiber (MCOF) is designed and proposed for high power handling in the mid IR spectral regime, covering the entire second transparency window of the atmosphere (3 to 5 microns). The core of the proposed specialty fiber is composed of a few rings of high index rods arranged in a pattern of hexagon. Dependence of effective mode area on the pitch and radius of high index rods are studied. Ultra high effective mode area up to 75000 micron square can be achieved over this specific wavelength range while retaining its single mode characteristic. A negligible confinement loss along with a low dispersion slope (near 0.03 ps/km-nm square) and a good beam quality factor (M2 1.17) should make this LMA fiber design attractive for fabrication as a potential candidate suitable for high power, passive applications at the mid IR wavelength regime.

  12. Mid-infrared supercontinuum generation in tapered As2S3 chalcogenide planar waveguide

    Science.gov (United States)

    Zhang, Xiang; Hu, Hongyu; Li, Wenbo; Dutta, Niloy K.

    2016-10-01

    We numerically demonstrate mid-infrared supercontinuum generation in a non-uniformly tapered chalcogenide planar waveguide. This planar rib waveguide of As2S3 glass on MgF2 is 2 cm long with increasing etch depth longitudinally to manage the total dispersion. This waveguide has zero dispersion at two wavelengths. The dispersion profile varies along the propagation distance, leading to continuous modification of the phase-matching condition for dispersive wave emission and enhancement of energy transfer efficiency between solitons and dispersive waves. Numerical simulations are conducted for secant input pulses at a wavelength of 1.55 μm with a width of 50 fs and peak power of 2 kW. Results show this proposed scheme significantly broadens the generated continuum, extending from ~1 to ~7 μm.

  13. Simulation of an erbium-doped chalcogenide micro-disk mid-infrared laser source.

    Science.gov (United States)

    Al Tal, Faleh; Dimas, Clara; Hu, Juejun; Agarwal, Anu; Kimerling, Lionel C

    2011-06-20

    The feasibility of mid-infrared (MIR) lasing in erbium-doped gallium lanthanum sulfide (GLS) micro-disks was examined. Lasing condition at 4.5 µm signal using 800 nm pump source was simulated using rate equations, mode propagation and transfer matrix formulation. Cavity quality (Q) factors of 1.48 × 10(4) and 1.53 × 10(6) were assumed at the pump and signal wavelengths, respectively, based on state-of-the-art chalcogenide micro-disk resonator parameters. With an 80 µm disk diameter and an active erbium concentration of 2.8 × 10(20) cm(-3), lasing was shown to be possible with a maximum slope efficiency of 1.26 × 10(-4) and associated pump threshold of 0.5 mW.

  14. Second harmonic generation in nanoscale films of transition metal chalcogenides: Taking into account multibeam interference

    Science.gov (United States)

    Lavrov, S. D.; Kudryavtsev, A. V.; Shestakova, A. P.; Kulyuk, L.; Mishina, E. D.

    2016-05-01

    Second harmonic generation is studied in structures containing nanoscale layers of transition metal chalcogenides that are two-dimensional semiconductors and deposited on a SiO2/Si substrate. The second harmonic generation intensity is calculated with allowance for multibeam interference in layers of dichalcogenide and silicon oxide. The coefficient of reflection from the SiO2-layer-based Fabry-Perot cavity is subsequently calculated for pump wave fields initiating nonlinear polarization at every point of dichalcogenide, which is followed by integration of all second harmonic waves generated by this polarization. Calculated second harmonic intensities are presented as functions of dichalcogenide and silicon oxide layer thicknesses. The dependence of the second harmonic intensity on the MoS2 layer thickness is studied experimentally in the layer of 2-140 nm. A good coincidence of the experimental data and numerical simulation results has been obtained.

  15. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    Science.gov (United States)

    Li, Shu-Guang; Zhou, Hong-Song; Yin, Guo-Bing

    2011-11-01

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kΛ of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2 μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm.

  16. Investigation of magnetic phases in parent compounds of iron-chalcogenides via quasiparticle scattering interference

    Science.gov (United States)

    Kamble, Bhaskar; Akbari, Alireza; Eremin, Ilya

    2016-04-01

    We employ a five-orbital tight-binding model to develop the mean-field solution for various possible spin density wave states in the iron-chalcogenides. The quasiparticle interference (QPI) technique is applied to detect signatures of these states due to scatterings arising from non-magnetic impurities. Apart from the experimentally observed double-striped structure with ordering vector (π/2,π/2) , the QPI method is investigated for the extended-stripe as well as the orthogonal double-stripe phase. We discuss QPI as a possible tool to detect and classify various magnetic structures with different electronic structure reconstruction within the framework of the \\text{Fe}1+y\\text{Te} compound.

  17. Si1Sb2Te3 phase change material for chalcogenide random access memory

    Institute of Scientific and Technical Information of China (English)

    Zhang Ting; Song Zhi-Tang; Liu Bo; Liu Wei-Li; Feng Song-Lin; Chen Bomy

    2007-01-01

    This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory.Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase.The film holds a threshold current about 0.155 mA,which is smaller than the value 0.31 mA of Ge2Sb2Te5 film.Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at~180°C and changes to hexagonal structure at~270°C.Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method.Data retention of the films was characterized as well.

  18. An SMS structure based temperature sensor using a chalcogenide multimode fibre

    Science.gov (United States)

    Wang, Pengfei; Yuan, Libo; Brambilla, Gilberto; Farrell, Gerald

    2016-11-01

    In this work we investigated the fabrication of a singlemode-multimode-singlemode (SMS) fibre structure based on a chalcogenide (As2S3 and AsxS1-x) multimode fibre (MMF) sandwiched between two standard silica singlemode fibres (SMFs) using a commercial fibre fusion splicer. The temperature dependence of this hybrid fibre structure was also investigated. A first proof of concept showed that the hybrid SMS fibre structure has an average experimental temperature sensitivity of 50.63 pm/°C over a temperature range of 20 °C 100°C at wavelengths around 1.55 μm. The measured results show a general agreement with numerical simulations based on a guided-mode propagation analysis method. Our result provides a potential platform for the development of compact, high-optical-quality and robust sensing devices operating at the mid-infrared wavelength range.

  19. Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM

    Science.gov (United States)

    Bogoslovskiy, Nikita; Tsendin, Konstantin

    2017-03-01

    In the phase-change memory (PCM) crystallization occurs in the high-current filament which forms during switching to the conductive state. In the present paper we conduct a numerical modeling of the current filament formation dynamics in thin chalcogenide films using an electronic-thermal model based on negative-U centers tunnel ionization and Joule heating. The key role of inhomogeneities in the filament formation process is shown. Steady-state filament parameters were obtained from the analysis of the stationary heat conduction equation. The filament formation dynamics and the steady-state filament radius and temperature could be controlled by material parameters and contact resistance. Consequently it is possible to control the size of the region wherein crystallization occurs. A good agreement with numerous experimental data leads to the conclusion that thermal effects play a significant role in CGS conduction and high-current filament formation while switching.

  20. Thermal and Dielectric Studies On Ge10se69tl21 Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    B.J. Madhu

    2011-01-01

    Full Text Available Bulk Ge10Se69Tl21 chalcogenide glass is prepared by melt quenching technique. Thermal analysis of bulk Ge10Se69Tl21 glass has been undertaken using temperature modulated Alternating Differential Scanning Calorimetry (ADSC. The Ge10Se69Tl21 glass is found to exhibit single glass transition temperature (Tg and double stage crystallization reactions (Tc1 & Tc2. The dependence of dielectric properties such as dielectric loss tangent (tanδ, dielectric constant (ε’ and dielectric loss factor (ε’’ on the frequency has been studied at the room temperature in the frequency range 10 kHz to 5 MHz. The dielectric parameters tanδ, ε’and ε’’ are found to decrease with the increase in the frequency. Further, resistance of the Ge10Se69Tl21 sample is also found to decrease with the increase in the frequency.

  1. New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, A.M.; Micocci, G.; Rizzo, A.

    1983-09-01

    The main characteristics and the possible applications of some new materials for optoelectronic devices are analyzed. For this purpose, the most widely used growth methods for obtaining good quality single crystals of indium and gallium chalcogenide layered compounds are described together with the best results obtained by us in the growth of GaS, GaSe, GaTe and InSe. The structural characteristics of these compounds, as inferred by electron and X-ray diffraction are reported. The electrical and optical properties of the various materials are related to the growth methods and are analyzed taking into account the trapping centers present in the energy gaps. The parameters of these centers are reported for all the analyzed layered compounds as determined by different electric and photoelectric techniques.

  2. Power-efficient production of photon pairs in a tapered chalcogenide microwire

    Energy Technology Data Exchange (ETDEWEB)

    Meyer-Scott, Evan, E-mail: emeyersc@uwaterloo.ca; Dot, Audrey [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Ahmad, Raja; Li, Lizhu; Rochette, Martin [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montréal, Québec H3A 2A7 (Canada); Jennewein, Thomas [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Quantum Information Science Program, Canadian Institute for Advanced Research, 180 Dundas Street West, Suite 1400, Toronto, Ontario M5G 1Z8 (Canada)

    2015-02-23

    Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

  3. Dy{sup 3+}-doped Ga–Sb–S chalcogenide glasses for mid-infrared lasers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Mingjie [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China); Yang, Anping, E-mail: apyang@jsnu.edu.cn [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China); Peng, Yuefeng [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900 (China); Zhang, Bin; Ren, He; Guo, Wei; Yang, Yan; Zhai, Chengcheng; Wang, Yuwei; Yang, Zhiyong; Tang, Dingyuan [Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116 (China)

    2015-10-15

    Highlights: • Novel Ga–Sb–S chalcogenide glasses doped with Dy{sup 3+} ions were synthesized. • The glasses show good thermal stability and excellent infrared transparency. • The glasses show low phonon energy and intense mid-infrared emissions. • The mid-infrared emissions have high quantum efficiency. • The mid-infrared emissions have large stimulated emission cross sections. - Abstract: Novel Ga–Sb–S chalcogenide glasses doped with different amount of Dy{sup 3+} ions were prepared. Their thermal stability, optical properties, and mid-infrared (MIR) emission properties were investigated. The glasses show good thermal stability, excellent infrared transparency, very low phonon energy (∼306 cm{sup −1}), and intense emissions centered at 2.95, 3.59, 4.17 and 4.40 μm. Three Judd–Ofelt intensity parameters (Ω{sub 2} = 8.51 × 10{sup −20} cm{sup 2}, Ω{sub 4} = 2.09 × 10{sup −20} cm{sup 2}, and Ω{sub 6} = 1.60 × 10{sup −20} cm{sup 2}) are obtained, and the related radiative transition properties are evaluated. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions (88.10% and 1.11 × 10{sup −20} cm{sup 2} for 2.95 μm emission, 75.90% and 0.38 × 10{sup −20} cm{sup 2} for 4.40 μm emission, respectively) in the Dy{sup 3+}-doped Ga–Sb–S glasses make them promising gain materials for the MIR lasers.

  4. Hubbard interactions in iron-based pnictides and chalcogenides: Slater parametrization, screening channels, and frequency dependence

    Science.gov (United States)

    van Roekeghem, Ambroise; Vaugier, Loïg; Jiang, Hong; Biermann, Silke

    2016-09-01

    We calculate the strength of the frequency-dependent on-site electronic interactions in the iron pnictides LaFeAsO, BaFe2As2 , BaRu2As2 , and LiFeAs and the chalcogenide FeSe from first principles within the constrained random phase approximation. We discuss the accuracy of an atomiclike parametrization of the two-index density-density interaction matrices based on the calculation of an optimal set of three independent Slater integrals, assuming that the angular part of the Fe d localized orbitals can be described within spherical harmonics as for isolated Fe atoms. We show that its quality depends on the ligand-metal bonding character rather than on the dimensionality of the lattice: it is excellent for ionic-like Fe-Se (FeSe) chalcogenides and a more severe approximation for more covalent Fe-As (LaFeAsO, BaFe2As2 ) pnictides. We furthermore analyze the relative importance of different screening channels, with similar conclusions for the different pnictides but a somewhat different picture for the benchmark oxide SrVO3: the ligand channel does not appear to be dominant in the pnictides, while oxygen screening is the most important process in the oxide. Finally, we analyze the frequency dependence of the interaction. In contrast to simple oxides, in iron pnictides its functional form cannot be simply modeled by a single plasmon, and the actual density of modes enters the construction of an effective Hamiltonian determining the low-energy properties.

  5. Effect of selenium addition on the GeTe phase change memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Vinod, E.M., E-mail: vinuem@gmail.com [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Singh, A.K.; Ganesan, R. [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Sangunni, K.S., E-mail: sangu@physics.iisc.ernet.in [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)

    2012-10-05

    Highlights: Black-Right-Pointing-Pointer Selenium is used as an additive to GeTe phase change materials. Black-Right-Pointing-Pointer Crystalline structure of GeTe alloys does not affect up to 0.20 at.% of Se. Black-Right-Pointing-Pointer The possibility of Se occupying Ge vacancy sites in GeTe structure is explained. Black-Right-Pointing-Pointer Ge-Se and GeTe{sub 2} bonds increase with increase of Se concentration. Black-Right-Pointing-Pointer T{sub m} is reduced in 0.50 at.% Se alloy, which can reduce RESET current requirements. - Abstract: Compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations are carried out by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron probe micro-analyzer (EPMA) and differential scanning calorimetry (DSC). The measurements reveal that GeTe crystals are predominant in alloys up to 0.20 at.% of Se content indicating interstitial occupancy of Se in the Ge vacancies. Raman modes in the GeTe alloys changes to GeSe modes with the addition of Se. Amorphousness in the alloy increases with increase of Se and 0.50 at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge-Se and Te-Se bonds. Structural changes are explained with the help of bond theory of solids. Crystallization temperature is found to be increasing with increase of Se, which will enable the amorphous stability. For the optimum 0.50 at.% Se alloy, the melting temperature has reduced which will reduce the RESET current requirement for the phase change memory applications.

  6. Mid-infrared supercontinuum generation spanning more than 11 μm in a chalcogenide step-index fiber

    DEFF Research Database (Denmark)

    Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis;

    2015-01-01

    Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively.......Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively....

  7. Fabrication of SiGeSb heating electrodes and their application for four-terminal chalcogenide programmable switches

    Science.gov (United States)

    Park, Young Sam; Lee, Seung-Yun

    2015-03-01

    This paper reports on sputter-deposited SiGeSb thin films and their application for four-terminal chalcogenide switch devices. The microstructures and electrical properties of the SiGeSb films were highly dependent on antimony concentration and annealing temperature. Microstructural changes such as surface roughening and formation of antimony grains were observed only for the Sb-rich SiGeSb films after annealing at 400 °C and higher. The sheet resistance of the SiGeSb films containing a small amount of antimony changed sporadically with annealing temperature because of a trade-off between activation and surface depletion of antimony. The resistance of the SiGeSb heating electrodes was varied by changing sputtering power for the antimony target and by changing the annealing temperature. Four-terminal chalcogenide switch devices were fabricated with SiGeSb heating electrodes of varying resistance. It was found that the switching voltage of the fabricated switch device was proportional to the resistance of the SiGeSb heating electrode. This indicates that the SiGeSb films with tunable sheet resistance are of great importance in fabricating chalcogenide switch devices and the optimization of the resistance of the SiGeSb film is essential to ensure proper switch operation.

  8. A Self-Templating Scheme for the Synthesis of Nanostructured Transition Metal Chalcogenide Electrodes for Capacitive Energy Storage

    KAUST Repository

    Xia, Chuan

    2015-06-11

    Due to their unique structural features including well-defined interior voids, low density, low coefficients of thermal expansion, large surface area and surface permeability, hollow micro/nanostructured transition metal sulfides with high conductivity have been investigated as new class of electrode materials for pseudocapacitor applications. Herein, we report a novel self-templating strategy to fabricate well-defined single and double-shell NiCo2S4 hollow spheres, as a promising electrode material for pseudocapacitors. The surfaces of the NiCo2S4 hollow spheres consist of self-assembled 2D mesoporous nanosheets. This unique morphology results in a high specific capacitance (1257 F g-1 at 2 A g-1), remarkable rate performance (76.4% retention of initial capacitance from 2 A g-1 to 60 A g-1) and exceptional reversibility with a cycling efficiency of 93.8% and 87% after 10,000 and 20,000 cycles, respectively, at a high current density of 10 A g-1. The cycling stability of our ternary chalcogenides is comparable to carbonaceous electrode materials, but with much higher specific capacitance (higher than any previously reported ternary chalcogenide), suggesting that these unique chalcogenide structures have potential application in next-generation commercial pseudocapacitors.

  9. Linear and nonlinear optical properties of new Se-based quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-02-01

    We are reporting the linear and nonlinear optical properties of Se-based quaternary chalcogenide Se-Sn-(Bi,Te) thin films. Thin films of bulk chalcogenide glasses, prepared by melt quenching method are deposited on glass substrate using thermal evaporation technique. The optical behavior of studied chalcogenide glass systems is investigated using transmission spectra in the spectral range of 400-2500 nm. The glasses exhibit considerable optical nonlinearities which are estimated using linear optical parameters. Linear refractive index has been calculated using well-known Swanepoel method. Wemple-DiDomenico (WDD) parameters are also reported for the investigated glasses. Optical band gap is determined using Tauc extrapolation method and is observed to increase with Sn content. The formulation proposed by Fournier and Snitzer is used to determine the nonlinear behavior of the refractive index. It is observed that n2 increases linearly with increasing n. The values of n2 are compared with pure silica and the results are 100-600 orders higher. The third-order susceptibility χ(3) is also reported in this paper. Two-photon absorption coefficient β2 is determined using optical band gap data. A strong dependence of β2 and n2 is observed on normalized photon energy (?) for a fixed excitation wavelength (1064 nm).

  10. Multilayer systems of alternating chalcogenide As Se and polymer thin films prepared using thermal evaporation and spin-coating techniques

    Science.gov (United States)

    Kohoutek, T.; Wagner, T.; Orava, J.; Krbal, M.; Ilavsky, J.; Vesely, D.; Frumar, M.

    2007-05-01

    We describe preparation and characterization of multilayer planar systems based on alternating chalcogenide As Se and polymer polyamide-imide (PAI) or polyvinyl-butyral (PVB) thin films. We deposited films of thermally evaporated As33Se67 chalcogenide glass periodically alternating with PAI or PVB films. Fifteen layers of As Se+PAI system and 17 layers of As Se+PVB system were deposited. The film thicknesses were approximately 100 nm for all of the film types. Polymer film thicknesses were calculated from profilometric measurements performed by an atomic force microscopy. Optical properties of prepared multilayers and also As Se, PAI and PVB single layers were established using UV vis NIR and ellipsometric spectroscopies. Both, As Se+PAI and As Se+PVB multilayer systems, exhibited the reflection (stop) bands centered near 830 nm. The bandwidth of reflection band of As Se+PAI multilayer was 90 nm while bandwidth of As Se+PVB system increased to 150 nm because PVB films had about 0.2 lower refractive index. A new possibility for the application of chalcogenide thin films appeared as high refractive index materials suitable for fabrication of optical elements (reflectors) for near-infrared region. Changing the films composition and thickness, multilayer systems with tailored position of stop band could be designed and prepared.

  11. Dielectric relaxation and AC conductivity studies of Se90Cd10−xInx glassy alloys

    Directory of Open Access Journals (Sweden)

    Nitesh Shukla

    2016-06-01

    Full Text Available Chalcogenide glassy alloys of Se90Cd10−xInx (x = 2, 4, 6, 8 are synthesized by melt quench technique. The prepared glassy alloys have been characterized by techniques such as differential scanning calorimetry (DSC, scanning electron microscopy (SEM and energy dispersive X-ray (EDAX. Dielectric properties of Se90Cd10−xInx (x = 2, 4, 6, 8 chalcogenide glassy system have been studied using impedance spectroscopic technique in the frequency range 42 Hz to 5 MHz at room temperature. It is found that the dielectric constants ɛ′, dielectric loss factor ɛ″ and loss angle Tan δ depend on frequency. ɛ′, ɛ″ and loss angle Tan δ are found to be decreasing with the In content in Se90Cd10−xInx glassy system. AC conductivity of the prepared sample has also been studied. It is found that AC conductivity increases with frequency where as it has decreasing trend with increasing In content in Se–Cd matrix. The semicircles observed in the Cole–Cole plots indicate a single relaxation process.

  12. Investigations into the Structure and Dynamics of Chalcogenide Glasses using High-Resolution Nuclear Magnetic Resonance Spectroscopy

    Science.gov (United States)

    Kaseman, Derrick Charles

    Chalcogenide glasses constitute an important class of materials that are sulfides, selenides or tellurides of group IV and/or V elements, namely Ge, As, P and Si with minor concentrations of other elements such as Ga, Sb, In. Because of their infrared transparency that can be tuned by changing chemistry and can be actively altered by exposure to band gap irradiation, chalcogenide glasses find use in passive and active optical devices for applications in the areas of photonics, remote sensing and memory technology. Therefore, it is important to establish predictive models of structure-property relationships for these materials for optimization of their physical properties for various applications. Structural elucidation of chalcogenide glasses is experimentally challenging and in order to make predictive structural models, structural units at both short and intermediate -range length scales must be identified and quantified. Nuclear Magnetic Resonance (NMR) spectroscopy is an element-specific structural probe that is uniquely suited for this task, but resolution and sensitivity issues have severely limited the applications of such techniques in the past. The recent development of multi-dimensional solid-state NMR techniques, such as Phase Adjusted Spinning Sidebands (PASS) and Magic Angle Turning (MAT) can potentially alleviate such issues. In this study novel two-dimensional, high-resolution 77Se and 125Te MATPASS NMR spectroscopic techniques are utilized to elucidate quantitatively the compositional evolution of the short- and intermediate- range atomic structure in three binary chalcogenide glass-forming systems, namely: GexSe100-x, AsxSe100-x , and AsxTe100-x. The spectroscopic results provide unambiguous site speciation and quantification for short- and intermediate-range structural motifs present in these glasses. In turn, for all systems, robust structural models and the corresponding structure-property relationships are successfully established as a function

  13. The influence of Te on thermal properties of Er-doped (Ge{sub 30}(Se{sub 1-x}Te {sub x}){sub 70}){sub 94}Ga{sub 6} chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai, Nishi, Miyazaki 889-2192 (Japan)]. E-mail: t0b153u@cc.miyazaki-u.ac.jp; Sakai, T. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai, Nishi, Miyazaki 889-2192 (Japan); Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada); Tonchev, D. [Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada); Munzar, M. [Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada); Ikari, T. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai, Nishi, Miyazaki 889-2192 (Japan); Kasap, S.O. [Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada)

    2005-08-25

    We have studied the thermal properties of Er{sub 2}S{sub 3} doped (Ge{sub 0.30}(Se{sub 1-x}Te {sub x}){sub 0.70}){sub 94}Ga{sub 6} chalcogenide glasses alloyed with different amounts of Te (x = 0.005-0.4). All the samples were doped with 1 at.% of initial amount of Er{sup 3+} ions. The glass composition was chosen with respect to the possible use of this material system in optical amplifier applications operating in the 1550 nm telecommunications window. We have prepared the glass samples by means of melt-quenching techniques using two different synthesis procedures and starting materials. The actual concentrations of glass constituents have been measured by EDX/SEM and WDX/SEM microanalysis techniques. We have carried out temperature-modulated differential scanning calorimetry (TMDSC) measurements to evaluate the thermal stability of these glasses in terms of their glass transformation and crystallization behaviors. Thermal properties of these (Ge{sub 0.30}(Se{sub 1-x}Te {sub x}){sub 0.70}){sub 94}Ga{sub 6} glasses changed substantially for Te content x {>=} 0.01 because of the inability of the original glass structure to accommodate the Te atoms with substantially larger atomic radius.

  14. Bandgaps of the Chalcogenide Glass Hollow-Core Photonic Crystal Fiber

    Institute of Scientific and Technical Information of China (English)

    LI Shu-Guang; ZHOU Hong-Song; YIN Guo-Bing

    2011-01-01

    Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method. A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps. For enlarging the bandgap width, an improved GLS HC-PCF is put forward, the normalized frequency kA of the improved fiber is from 7.2 to 8.5 in its first bandgap. The improved GLS HC-PCF with pitch of 4.2μm can transmit the lights with wavelengths ranging from 3.1μm to 3.7μm.%Bandgaps of chalcogenide glass hollow-core photonic crystal fibers (GLS HC-PCFs) are analyzed by using the plane-wave expansion method.A mid-infrared laser can propagate in these low confinement loss fibers when the wavelength falls into the bandgaps.For enlarging the bandgap width,an improved GLS HC-PCF is put forward,the normalized frequency κA of the improved fiber is from 7.2 to 8.5 in its first bandgap.The improved GLS HC-PCF with pitch of 4.2μm can transmit the lights with wavelengths ranging from 3.1 μm to 3.7 μm.Photonic crystal fibers (PCFs) can be classified into total internal reflection PCFs and photonic bandgap (PBG) PCFs[1] Solid core PCFs are one kind of the total internal reflection PCFs;hollow-core PCFs (HC-PCFs) are a kind of typical PBG fibers.The conception of HC-PCFs was first proposed by Russel in 1991.[2] Later,it was theoretically demonstrated by Birks et al.[3] in 1995.A bandgap photonic crystal fiber was mde by Knight et al.[4] for the first time in 1998.On the basis of these works,the first HC-PCF was designed and made by Cregan et al.[5] in 1999.

  15. Influence of the coordination number Z on the micro-Raman spectra of ternary chalcogenide glasses

    Science.gov (United States)

    Iovu, M. S.; Iaseniuc, O. V.; Dinescu, D.; Enachescu, M.

    2016-12-01

    Chalcogenide glasses are attractive materials due to its application in photonics and optoelectronics. Chalcogenide glasses GexAsxSe1-2x (average coordination number Z=2.15÷2.90) and (As4S3Se3)1-xSnx (average coordination number Z=2.4÷2.56), which contain elements of IV group of the Periodic Table, such as Ge and Sn are important for a wide range of technical applications, such as infrared optical elements, acousto-optic and alloptical switching devices, holographic recording media, diffractive optics, photonic crystals, etc. [1, 2]. Raman spectroscopy is an efficient method for obtaining information on the local structure of the disordered material, especially when the composition is varied. In this paper are reported the Micro-Raman spectra of GexAsxSe1-2x and (As4S3Se3)1-xSnx bulk glasses and amorphous thin films. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (As4S3Se3)1-xSnx thin films consist of two broad bands located at around ν=236 cm-1 and ν=345 cm-1, which corresponds to the symmetric stretching vibration modes of AsSe3/2 and AsS3/2 pyramids, respectively. Tin impurities didn't change the shape of Micro-Raman spectra, but shift the both bands to low frequency region. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (GexAsxSe1-2x thin films consist of one main vibration band located at around ν=246 cm-1 for lower concentration of Ge and As, and is attributed to (AsSe1/2)3 pyramidal units. With increasing of Ge and As concentrations this band shifts to lower frequency region up to ν=236 cm-1 for x=0.30. The vibration band situated around ν=205 cm-1 is attributed to Ge(Se1/2)4 tetrahedral units and increase in the intensity with increasing of Ge and As concentrations. Some shoulders in high frequency regions at ν=365-390 cm-1 and ν=500-530 cm-1, caused by the presence of As-Se bands and Se-Se chains also was observed.

  16. Translating VDM to Alloy

    DEFF Research Database (Denmark)

    Lausdahl, Kenneth

    2013-01-01

    . Traditionally, theorem provers are used to prove that specifications are correct but this process is highly dependent on expert users. Alternatively, model finding has proved to be useful for validation of specifications. The Alloy Analyzer is an automated model finder for checking and visualising Alloy...... specifications. However, to take advantage of the automated analysis of Alloy, the model-oriented VDM specifications must be translated into a constraint-based Alloy specifications. We describe how a sub- set of VDM can be translated into Alloy and how assertions can be expressed in VDM and checked by the Alloy...

  17. Design and growth of novel compounds for radiation sensors: multinary chalcogenides

    Science.gov (United States)

    Singh, N. B.; Su, Ching-Hua; Nagaradona, Teja; Arnold, Brad; Choa, Fow-Sen

    2016-05-01

    Increasing threats of radiological weapons have revitalized the researches for low cost large volume γ-ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage.

  18. Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

    Indian Academy of Sciences (India)

    H M Pathan; C D Lokhande

    2004-04-01

    During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.

  19. Interplay between magnetism and superconductivity in iron-chalcogenide superconductors: crystal growth and characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Wen Jinsheng; Birgeneau, R J [Physics Department, University of California, Berkeley, CA 94720 (United States); Xu Guangyong; Gu Genda; Tranquada, J M, E-mail: jinshengwen@berkeley.edu, E-mail: jtran@bnl.gov [Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2011-12-15

    In this review, we present a summary of results on single crystal growth of two types of iron-chalcogenide superconductors, Fe{sub 1+y}Te{sub 1-x}Se{sub x} (11), and A{sub x}Fe{sub 2-y}Se{sub 2} (A = K, Rb, Cs, Tl, Tl/K, Tl/Rb), using Bridgman, zone-melting, vapor self-transport and flux techniques. The superconducting and magnetic properties (the latter gained mainly from neutron scattering measurements) of these materials are reviewed to demonstrate the connection between magnetism and superconductivity. It will be shown that for the 11 system, while static magnetic order around the reciprocal lattice position (0.5, 0) competes with superconductivity, spin excitations centered around (0.5, 0.5) are closely coupled to the materials' superconductivity; this is made evident by the strong correlation between the spectral weight around (0.5, 0.5) and the superconducting volume fraction. The observation of a spin resonance below the superconducting temperature, T{sub c}, and the magnetic-field dependence of the resonance emphasize the close interplay between spin excitations and superconductivity, similar to cuprate superconductors. In A{sub x}Fe{sub 2-y}Se{sub 2}, superconductivity with T{sub c} {approx} 30 K borders an antiferromagnetic insulating phase; this is closer to the behavior observed in the cuprates but differs from that in other iron-based superconductors.

  20. Interplay between magnetism and superconductivity in iron-chalcogenide superconductors: crystal growth and characterizations

    Science.gov (United States)

    Wen, Jinsheng; Xu, Guangyong; Gu, Genda; Tranquada, J. M.; Birgeneau, R. J.

    2011-12-01

    In this review, we present a summary of results on single crystal growth of two types of iron-chalcogenide superconductors, Fe1+yTe1-xSex (11), and AxFe2-ySe2 (A = K, Rb, Cs, Tl, Tl/K, Tl/Rb), using Bridgman, zone-melting, vapor self-transport and flux techniques. The superconducting and magnetic properties (the latter gained mainly from neutron scattering measurements) of these materials are reviewed to demonstrate the connection between magnetism and superconductivity. It will be shown that for the 11 system, while static magnetic order around the reciprocal lattice position (0.5, 0) competes with superconductivity, spin excitations centered around (0.5, 0.5) are closely coupled to the materials' superconductivity; this is made evident by the strong correlation between the spectral weight around (0.5, 0.5) and the superconducting volume fraction. The observation of a spin resonance below the superconducting temperature, Tc, and the magnetic-field dependence of the resonance emphasize the close interplay between spin excitations and superconductivity, similar to cuprate superconductors. In AxFe2-ySe2, superconductivity with Tc ~ 30 K borders an antiferromagnetic insulating phase; this is closer to the behavior observed in the cuprates but differs from that in other iron-based superconductors.

  1. Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

    Energy Technology Data Exchange (ETDEWEB)

    Meenatchi, Boominathan [Cauvery College for Women, Tamilnadu (India); Renuga, Velayutham [National College, Tamilnadu (India); Manikandan, Ayyar [Bharath Institute of Higher Education and Research, Bharath University, Tamilnadu (India)

    2016-03-15

    Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

  2. Large and Ultrafast Third-Order Nonlinear Optical Properties of Ge-S Based Chalcogenide Glasses

    Institute of Scientific and Technical Information of China (English)

    CHU Sai-Sai; WANG Shu-Feng; TAO Hai-Zheng; WANG Zhen-Wei; YANG Hong; LIN Chang-Gui; GONG Qi-Huang; ZHAO Xiu-Jian

    2007-01-01

    We report ultrafast third-order nonlinear optical (NLO) properties of several chalcogenide glasses GeSx (x = 1.8,2.0, 2.5) measured by femtosecond time-resolved optical Kerr gate technique at 820nm. The third-order nonlinear susceptibility of GeS1.8 glass is determined to be as large as 1.41 × 10-12 esu, which is the maximum value of the third order nonlinear susceptibility X(3) for the three compositions investigated. The symmetric Gauss profiles of optical Kerr signals reveal the nature of ultrafast nonlinear response of these samples, which are originated from the ultrafast polarization of the electron clouds. By detailed microstructural analysis of these glasses based on the chain-crossing model (CCM) and the random-covalent-network model (RCNM), it can be concluded that X(3) value of GeSx glasses can be enhanced greatly by S-S covalent bonds or S3Ge-GeS3 ethane-like units.

  3. Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

    KAUST Repository

    Yang, Xiaoming

    2014-12-12

    Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

  4. Ultra broadband flat dispersion tailoring on reversed-rib chalcogenide glass waveguide

    Science.gov (United States)

    Zhai, Yanfen; Qi, Renduo; Yuan, Chenzhi; Zhang, Wei; Huang, Yidong

    2016-11-01

    In this paper, we introduce a horizontal slot in the reversed-rib chalcogenide glass waveguide to tailor its dispersion characteristics. The waveguide exhibits a flat and low dispersion over a wavelength range of 1080 nm, in which the dispersion fluctuates between -10.6 ps·nm-1·km-1 and +11.14 ps·nm-1·km-1. The dispersion tailoring effect is due to the mode field transfer from the reversed-rib waveguide to the slot with the increase of wavelength, which results in the extension of the low dispersion band. Moreover, the nonlinear coefficient and the phase-matching condition of the four-wave mixing process in this waveguide are studied, showing that the waveguide has great potential in nonlinear optical applications over a wide wavelength range. Project supported by the National Basic Research Program of China (Grant Nos. 2013CB328700 and 2011CBA00303) and the National Natural Science Foundation of China (Grant Nos. 61575102 and 61321004).

  5. Hybrid metal-organic chalcogenide nanowires with electrically conductive inorganic core through diamondoid-directed assembly

    Science.gov (United States)

    Yan, Hao; Hohman, J. Nathan; Li, Fei Hua; Jia, Chunjing; Solis-Ibarra, Diego; Wu, Bin; Dahl, Jeremy E. P.; Carlson, Robert M. K.; Tkachenko, Boryslav A.; Fokin, Andrey A.; Schreiner, Peter R.; Vailionis, Arturas; Kim, Taeho Roy; Devereaux, Thomas P.; Shen, Zhi-Xun; Melosh, Nicholas A.

    2016-12-01

    Controlling inorganic structure and dimensionality through structure-directing agents is a versatile approach for new materials synthesis that has been used extensively for metal-organic frameworks and coordination polymers. However, the lack of `solid’ inorganic cores requires charge transport through single-atom chains and/or organic groups, limiting their electronic properties. Here, we report that strongly interacting diamondoid structure-directing agents guide the growth of hybrid metal-organic chalcogenide nanowires with solid inorganic cores having three-atom cross-sections, representing the smallest possible nanowires. The strong van der Waals attraction between diamondoids overcomes steric repulsion leading to a cis configuration at the active growth front, enabling face-on addition of precursors for nanowire elongation. These nanowires have band-like electronic properties, low effective carrier masses and three orders-of-magnitude conductivity modulation by hole doping. This discovery highlights a previously unexplored regime of structure-directing agents compared with traditional surfactant, block copolymer or metal-organic framework linkers.

  6. Two-dimensional topological insulators in group-11 chalcogenide compounds: M2Te (M =Cu ,Ag )

    Science.gov (United States)

    Ma, Yandong; Kou, Liangzhi; Dai, Ying; Heine, Thomas

    2016-06-01

    Two-dimensional (2D) topological insulators (TIs) are recently recognized states of quantum matter that are highly interesting for lower-power-consuming electronic devices owing to their nondissipative transport properties protected from backscattering. So far, only few 2D TIs, suffering from small bulk band gap (TIs in group-11 chalcogenide 2D crystals, M2Te (M =Cu ,Ag ) . The nontrivial topological states in C u2Te and A g2Te 2D crystals, identified by topological invariant and edge state calculations, exhibit sizeable bulk gaps of 78 and 150 meV, respectively, suggesting that they are candidates for room-temperature applications. Moreover, strain engineering leads to effective control of the nontrivial gaps of C u2Te and A g2Te , and a topological phase transition can be realized in C u2Te , while the nontrivial phase in A g2Te is stable against strain. Their dynamic and thermal stabilities are further confirmed by employing phonon calculations and ab initio molecular dynamic simulations.

  7. Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

    Science.gov (United States)

    Yang, X. M.; Zhang, Yaping; Syed, Ahad

    2015-04-01

    Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

  8. The use of castor oil and ricinoleic acid in lead chalcogenide nanocrystal synthesis

    Science.gov (United States)

    Kyobe, Joseph W. M.; Mubofu, Egid B.; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

    2016-08-01

    A green solution-based thermolysis method for the synthesis of lead chalcogenide (PbE, E = S, Se, Te) nanocrystals in castor oil (CSTO) and its isolate ricinoleic acid (RA) is described. The blue shift observed from the optical spectra of CSTO and RA-capped PbE nanocrystals (NCs) confirmed the evidence of quantum confinement. The dimensions of PbE NCs obtained from NIR absorption spectra, transmission electron microscopy (TEM), and X-ray diffraction (XRD) studies were in good agreement. The particle sizes estimated were in the range of 20, 25, and 130 nm for castor oil-capped PbS, PbSe, and PbTe, respectively. Well-defined close to cubic-shaped particles were observed in the scanning electron microscopy (SEM) images of PbSe and PbTe nanocrystals. The high-resolution TEM and selective area electron diffraction (SAED) micrographs of the as-synthesized crystalline PbE NCs showed distinct lattice fringes with d-spacing distances corroborating with the standard values reported in literature.

  9. Optical properties and local structure of Dy3+-doped chalcogenide and chalcohalide glasses

    Institute of Scientific and Technical Information of China (English)

    TANG Gao; YANG Zhiyong; LUO Lan; CHEN Wei

    2008-01-01

    Dy3+-doped Ge-Ga-Se chalcogenide glasses and GeSe2-Ga2Se3-CsI chalcohalide glasses were prepared. The absorption, emission properties, and local structure of the glasses were investigated. When excited at 808 nm diode laser, intense 1.32 and 1.55 μm near-infrared luminescence were observed with full width at half maximum (FWHM) of about 90 and 50 rim, respectively. The lifetime of the 1.32 μm emission varied due to changes in the local structure surrounding Dy3+ ions. The longest lifetime was over 2.5 ms, and the value was signifi-cantly higher than that in other Dy3+-doped glasses. Some other spectroscopic parameters were calculated by using Judd-Ofelt theory. Meanwhile, Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses showed good infrared transmittance. As a result, Dy3+-doped Ge-Ga-Se and GeSe2-Ga2Se3-CsI glasses were believed to be useful hosts for 1.3 μm optical fiber amplifier.

  10. High-pressure and temperature-induced structural, elastic, and thermodynamical properties of strontium chalcogenides

    Science.gov (United States)

    Varshney, Dinesh; Jain, S.; Shriya, S.; Khenata, R.

    2016-09-01

    Pressure- and temperature-dependent mechanical, elastic, and thermodynamical properties of rock salt to CsCl structures in semiconducting Sr X ( X = O, S, Se, and Te) chalcogenides are presented based on model interatomic interaction potential with emphasis on charge transfer interactions, covalency effect, and zero point energy effects apart from long-range Coulomb, short-range overlap repulsion extended and van der Waals interactions. The developed potential with non-central forces validates the Cauchy discrepancy among elastic constants. The volume collapse ( V P/ V 0) in terms of compressions in Sr X at higher pressure indicates the mechanical stiffening of lattice. The expansion of Sr X lattice is inferred from steep increase in V T/ V 0 and is attributed to thermal softening of Sr X lattice. We also present the results for the temperature-dependent behaviors of hardness, heat capacity, and thermal expansion coefficient. From the Pugh's ratio (ϕ = B T /G H), the Poisson's ratio ( ν) and the Cauchy's pressure ( C 12- C 44), we classify SrO as ductile but SrS, SrSe, and SrTe are brittle material. To our knowledge these are the first quantitative theoretical prediction of the pressure and temperature dependence of mechanical stiffening, thermally softening, and brittle nature of Sr X ( X = O, S, Se, and Te) and still await experimental confirmations.

  11. Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

    Science.gov (United States)

    Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

    2016-05-01

    Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

  12. Non-Newtonian flow of an ultralow-melting chalcogenide liquid in strongly confined geometry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Siyuan; Jain, Chhavi; Wondraczek, Katrin; Kobelke, Jens [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Wondraczek, Lothar [Otto Schott Institute of Material Research (OSIM), Friedrich Schiller University Jena, Fraunhoferstr. 6, 07743 Jena (Germany); Troles, Johann; Caillaud, Celine [Université de Rennes I, Equipe Verres et Céramiques, UMR 6226 Sciences Chimiques de Rennes, Campus de Beaulieu, 35042 Rennes (France); Schmidt, Markus A., E-mail: markus.schmidt@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Otto Schott Institute of Material Research (OSIM), Friedrich Schiller University Jena, Fraunhoferstr. 6, 07743 Jena (Germany)

    2015-05-18

    The flow of high-viscosity liquids inside micrometer-size holes can be substantially different from the flow in the bulk, non-confined state of the same liquid. Such non-Newtonian behavior can be employed to generate structural anisotropy in the frozen-in liquid, i.e., in the glassy state. Here, we report on the observation of non-Newtonian flow of an ultralow melting chalcogenide glass inside a silica microcapillary, leading to a strong deviation of the shear viscosity from its value in the bulk material. In particular, we experimentally show that the viscosity is radius-dependent, which is a clear indication that the microscopic rearrangement of the glass network needs to be considered if the lateral confinement falls below a certain limit. The experiments have been conducted using pressure-assisted melt filling, which provides access to the rheological properties of high-viscosity melt flow under previously inaccessible experimental conditions. The resulting flow-induced structural anisotropy can pave the way towards integration of anisotropic glasses inside hybrid photonic waveguides.

  13. Lead Chalcogenide on Silicon Infrared Focal Plane Arrays for Thermal Imaging(Review Paper

    Directory of Open Access Journals (Sweden)

    Hans Zogg

    2001-01-01

    Full Text Available "Narrow gap IV-VI [lead chalcogenides like Pbl-xSnxSe and PbTe] layers grown epitaxially on silicon( III substrates by molecular beam epitaxy exhibit high quality despite the large lattice and thermal expansion mismatch. A CaF2 buffer layer is employed for compatibility. Due to easy glide of misfit dislocations in the IV- VI layers, thei1rtal strains relax even at cryogenic. temperatures and after many temperature cyclings. The high permittivities of the IV- VI layers effectively shield the electric fields from charged defects. Higher quality devices are obtained from lower quality material, at variance to narrow gap 11- VI and 111- V compounds. Material characterisation and sensor array properties have been reviewed. Schottky barrier or p-n+ sensor arrays have been delineated using standard photolithography. At low temperatures, the sensitivities are limited by defects, mainly dislocations, and the device performance is predicted by the dislocation density. At higher temperatures, the ultimate theoretical sensitivity is obtained with Schottky barrier devices despite large mismatch and with only 3 µm thickness of the layers. First chara'cterisations of a 96 x 128 array on a silicon substrate containing the read-out circuits show that the concept is functional and gives high yield.

  14. Ellipsometric Characterization of Thin Films from Multicomponent Chalcogenide Glasses for Application in Modern Optical Devices

    Directory of Open Access Journals (Sweden)

    R. Todorov

    2013-01-01

    Full Text Available A review is given on the application of the reflectance ellipsometry for optical characterization of bulk materials and thin films with thickness between λ/20 and 2λ (at λ=632.8 nm. The knowledge of the optical constants (refractive index, n, and extinction coefficient, k of thin films is of a great importance from the point of view of modelling and controlling the manufacture of various optical elements, such as waveguides, diffraction gratings, and microlenses. The presented results concern the optical properties of thin films from multicomponent chalcogenide glasses on the base of As2S3 and GeS2 determined by multiple-angle-of-incidence ellipsometry and regarded as a function of the composition and thickness. The homogeneity of the films is verified by applying single-angle calculations at different angles. Due to decomposition of the bulk glass during thermal evaporation, an optical inhomogeneity of the thin As (Ge-S-Bi(Tl films is observed. The profile of n in depth of thin As-S-Tl (Bi films was investigated by evaporation of discrete layers. It is demonstrated that homogenous layers from the previous compounds with controlled composition can be deposited by coevaporation of As2S3 and metals or their compounds (Bi, Tl, In2S3.

  15. Studies of non-vacuum processing of Cu-chalcogenide thin films.

    Science.gov (United States)

    El Hamri, E; Meddah, M; Boulkadat, L; Elfanaoui, A; Bouabid, K; Nya, M; Portier, X; Ihlal, A

    2012-08-01

    Cu-chalcogenide thin films were prepared using a two stage method: one step electrodeposition of CuISe and CIGSe, and the sulfurisation of CISe to prepare CISSe thin films. The films were deposited on different substrates: Mo and ITO coated glass. The optimum potentials for electrodeposition of CISe and CIGSe films were respectively selected in the range -400 to -550 mV and -650 to -700 mV (vs. SCE). The electrodeposited layers were firmly adhesive. The well known chalcopyrite structure appears after annealing at 400 degrees C under Argon for CISe. The band gap value deduced from the optical measurements is close to 1 eV. To increase this value, addition of gallium in the aqueous electrolytic solution was performed. A band gap value as high as 1.26 eV was recorded on the obtained CIGSe films. Sulfurisation of CISe layers under 5% H2S/Ar atmosphere lead to a shift of the position of the principal XRD peaks indicating the substitution of selenium atoms by sulfur atoms and thus the formation of the quaternary CISSe. Optical measurements performed on this quaternary compound show that our films exhibit a band gap value scaling from 1 eV to 1.4 eV depending on the amount of sulphur incorporated into the layers during the heat treatments.

  16. Highly efficient cascaded amplification using Pr(3+)-doped mid-infrared chalcogenide fiber amplifiers.

    Science.gov (United States)

    Hu, Jonathan; Menyuk, Curtis R; Wei, Chengli; Brandon Shaw, L; Sanghera, Jasbinder S; Aggarwal, Ishwar D

    2015-08-15

    We computationally investigate cascaded amplification in a three-level mid-infrared (IR) Pr(3+)-doped chalcogenide fiber amplifier. The overlap of the cross-sections in the transitions (3)H(6)→(3)H(5) and (3)H(5)→(3)H(4) enable both transitions to simultaneously amplify a single wavelength in the range between 4.25 μm and 4.55 μm. High gain and low noise are achieved simultaneously if the signal is at 4.5 μm. We show that 45% of pump power that is injected at 2 μm can be shifted to 4.5 μm. The efficiency of using a mid-IR fiber amplifier is higher than what can be achieved by using mid-IR supercontinuum generation, which has been estimated at 25%. This mid-IR fiber amplifier can be used in conjunction with quantum cascade lasers to obtain a tunable, high-power mid-IR source.

  17. Silicon-based chalcogenide: Unexpected quantum spin Hall insulator with sizable band gap

    Science.gov (United States)

    Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji; Li, Sheng-shi; Yan, Shi-shen

    2016-10-01

    Searching for two-dimensional (2D) silicon-based topological materials is imperative for the development of various innovative devices. Here, by using first-principles calculations, we discover the silicon-based chalcogenide Si2Te2 film to be a 2D quantum spin Hall (QSH) insulator with a fundamental band gap of 0.34 eV, which can be tunable under external strain. This nontrivial topological phase stems from band inversion between the Si-px,y and Te-px,y orbitals, demonstrated by a single pair of topologically protected helical edge states with Dirac point located in the bulk gap. Notably, the characteristic properties of edge states, such as the Fermi velocity and edge shape, can be engineered by edge modifications. Additionally, the BN sheet is an ideal substrate for the experimental realization of Si2Te2 films, without destroying its nontrivial topology. Our works open a meaningful route for designing topological spintronics devices based on 2D silicon-based films.

  18. Optical properties change in laser-induced Te/As2Se3 chalcogenide thin films

    Science.gov (United States)

    Behera, Mukta; Naik, Ramakanta

    2016-10-01

    In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As2Se3 film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As2Se3 bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As2Se3 matrix was done by 532-nm laser irradiation. The structure of the As2Se3, as-prepared and irradiated Te/As2Se3 films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As2Se3 film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices.

  19. A new method to study complex materials in solid state chemistry: application to chalcogenide materials

    Science.gov (United States)

    Lippens, P. E.; Olivier-Fourcade, J.; Jumas, J. C.

    1998-08-01

    We show that a combined application of Mössbauer spectroscopy and other experimental tools such as X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and nuclear magnetic resonance provides a coherent picture of the local electronic structure in chalcogenide materials. In order to develop this idea we propose an analysis of the Sn, Sb and Te local electronic structures for three different systems of materials. The first example concerns the In Sn S system. We show that Li insertion in In16Sn4S32 leads to changes of the Sn oxidation states from Sn(IV) to Sn(II). The second example concerns materials of the Tl Sb S system. We show that variations of the 121Sb Mössbauer isomer shift and surface of the first peak of the X-ray absorption spectra at the Sb LIII edge can be linearly correlated because of the main influence of the Sb 5s electrons. This is explained by changes in the local environment of the Sb atoms. The last example concerns the crystalline phases of the Tl Sn Te system. The formal oxidation numbers of the Te atoms are determined from 125Te Mössbauer spectroscopy and X-ray photoelectron spectroscopy. They are related to the different types of bonds involving the Te atoms in the Tl Sn Te compounds.

  20. Superior Electrical Conductivity in Hydrogenated Layered Ternary Chalcogenide Nanosheets for Flexible All-Solid-State Supercapacitors.

    Science.gov (United States)

    Hu, Xin; Shao, Wei; Hang, Xudong; Zhang, Xiaodong; Zhu, Wenguang; Xie, Yi

    2016-05-04

    As the properties of ultrathin two-dimensional (2D) crystals are strongly related to their electronic structures, more and more attempts were carried out to tune their electronic structures to meet the high standards for the construction of next-generation smart electronics. Herein, for the first time, we show that the conductive nature of layered ternary chalcogenide with formula of Cu2 WS4 can be switched from semiconducting to metallic by hydrogen incorporation, accompanied by a high increase in electrical conductivity. In detail, the room-temperature electrical conductivity of hydrogenated-Cu2 WS4 nanosheet film was almost 10(10) times higher than that of pristine bulk sample with a value of about 2.9×10(4)  S m(-1) , which is among the best values for conductive 2D nanosheets. In addition, the metallicity in the hydrogenated-Cu2 WS4 is robust and can be retained under high-temperature treatment. The fabricated all-solid-state flexible supercapacitor based on the hydrogenated-Cu2 WS4 nanosheet film shows promising electrochemical performances with capacitance of 583.3 F cm(-3) at a current density of 0.31 A cm(-3) . This work not only offers a prototype material for the study of electronic structure regulation in 2D crystals, but also paves the way in searching for highly conductive electrodes.

  1. Pressure induced stiffening, thermal softening of bulk modulus and brittle nature of mercury chalcogenides

    Science.gov (United States)

    Varshney, Dinesh; Shriya, Swarna; Sapkale, Raju; Varshney, Meenu; Ameri, M.

    2015-07-01

    The pressure and temperature dependent elastic properties of mercury chalcogenides (HgX; X = S, Se and Te) with pressure induced structural transition from ZnS-type (B3) to NaCl-type (B1) structure have been analyzed within the framework of a model interionic interaction potential with long-range Coulomb and charge transfer interactions, short-range overlap repulsion and van der Waals (vdW) interactions as well as zero point energy effects. Emphasis is on the evaluation of the Bulk modulus with pressure and temperature dependency to yield the Poisson's ratio ν, the Pugh ratio ϕ, anisotropy parameter, Shear and Young's modulus, Lamé's constant, Klein man parameter, elastic wave velocity and Debye temperature. The Poisson's ratio behavior infers that HgX are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations.

  2. Carbon supported ruthenium chalcogenide as cathode catalyst in a microfluidic formic acid fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Gago, A.S.; Alonso-Vante, N. [Laboratory of Electrocatalysis, UMR-CNRS 6503, Universite de Poitiers, 40 Avenue du Recteur Pineau, F-86022 Potiers Cedex (France); Morales-Acosta, D.; Arriaga, L.G. [Centro de Investigacion y Desarrollo Tecnologico en Electroquimica, S.C. Parque Tecnologico Queretaro Sanfandila, P.O. Box 064, Pedro Escobedo, 76703, Queretaro (Mexico)

    2011-02-01

    This work reports the electrochemical measurements of 20 wt.% Ru{sub x}Se{sub y}/C for oxygen reduction reaction (ORR) in presence of different concentration of HCOOH and its use as cathode catalyst in a microfluidic formic acid fuel cell ({mu}FAFC). The results were compared to those obtained with commercial Pt/C. Half-cell electrochemical measurements showed that the chalcogenide catalyst has a high tolerance and selectivity towards ORR in electrolytes containing up to 0.1 M HCOOH. The depolarization effect was higher on Pt/C than on Ru{sub x}Se{sub y}/C by a factor of ca. 23. Both catalysts were evaluated as cathode of a {mu}FAFC operating with different concentrations of HCOOH. When 0.5 M HCOOH was used, maximum current densities of 11.44 mA cm{sup -2} and 4.44 mA cm{sup -2} were obtained when the cathode was Ru{sub x}Se{sub y}/C and Pt/C, respectively. At 0.5 M HCOOH, the peak power density of the {mu}FAFC was similar for both catalysts, ca. 1.9 mW cm{sup -2}. At 5 M HCOOH the power density of the {mu}FAFC using Ru{sub x}Se{sub y}, was 9.3 times higher than the obtained with Pt/C. (author)

  3. Photoelectric properties of defect chalcogenide HgGa2X4 (x=S, Se, Te)

    Science.gov (United States)

    Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini

    2016-05-01

    We present results of ab initio study of ordered vacancy compounds of mercury. The electronic structure, charge density, optical and transport properties of the semiconductor family HgGa2X4 (X=S, Se, Te) are calculated using the full potential linearized augmented plane wave method which is based on the density functional theory. A direct bandgap is observed in these compounds, which reduces in the order S>Se>Te. From the density of states it is observed that there is strong hybridization of Hg-d, Ga-d and X-p states. The optical properties show a red shift with increasing size and atomic no. of the chalcogenide atoms. We have also reported the transport properties of mercury thiogallates for the first time. The selenide compound exhibits n-type nature whereas HgGa2S4 and HgGa2Te4 show p-type behavior. The power factor and ZT for the HGS increases at low temperatures, the figure of merit is highest for HgGa2Se4 (1.17) at 19 K.

  4. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    Science.gov (United States)

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-01

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

  5. Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jaegermann, W.; Pettenkofer, C.; Lang, O.; Schlaf, R.; Tiefenbacher, S.; Tomm, Y. [Hahn-Meitner-Inst., Berlin (Germany)

    1994-12-31

    The preparation of thin films of layered chalcogenide semiconductors as MX and MX{sub 2} (X = S, Se) based on the concept of van der Waals epitaxy (VDWE) is presented for different substrate/overlayer combinations as GaSe, InSe, SnSe{sub 2}, WS{sub 2} on WSe{sub 2}, GaSe, MoTe{sub 2}, graphite and mica. In all cases stoichiometric films are formed either as epitaxial layers or strongly textured films with the c-axis aligned in spite of strong lattice mismatch. The interfaces are non-reactive and atomically abrupt. The electronic properties of the interfaces are mostly ideal showing band offsets according to the electron affinity rule and no operative interface states. However, doping of the films is still a problem which limits the band bending and the attainable surface photovoltage. The perspectives and preconditions for the further development of layered semiconductor VDWE films for solar cells will be critically discussed.

  6. Magnetoresistance and electrical properties of multi-component copper chalcogenides at pressures up to 50 GPa

    Science.gov (United States)

    Melnikova, Nina; Tebenkov, Alexander; Babushkin, Alexey; Kurochka, Kirill; Phase Transitions Team; Transport Properties Team; Novel Materials Team

    2013-06-01

    Multi-component chalcogenides based on layered semiconductors A3B6 (such as InS, InSe, GaS, GaSe, etc) are new objects of study, they have interesting physical properties and undergo temperature and baric phase transitions. This paper presents the results of a study of the electrical properties and magnetoresistance of CuInS2, CuInSe2, CuInAsS3, CuInAsSe3, CuInSbS3 at pressures up to 50 GPa. High pressures have been generated in the cell with synthetic carbonado-type diamond anvils that can be used as electric contacts. Electric properties at high pressure have been investigated on dc current and by means of impedance spectroscopy. Magnetoresistance has been measured in transverse magnetic field. The pressure ranges of noticeable changes in a behavior of magnetoresistance, of impedance and admittance, tangent of loss angle, relaxation time upon a pressure increase and a pressure decrease are established. This behavior of physical parameters can be due to structural transitions and due to a change of electron structure. This work was supported in part by the Russian Foundation for Basic Research, project no. 13-02-00633.

  7. Alloy Fabrication Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At NETL’s Alloy Fabrication Facility in Albany, OR, researchers conduct DOE research projects to produce new alloys suited to a variety of applications, from gas...

  8. All-optical demultiplexing of 1.28~Tb/s to 10~Gb/s using a chalcogenide photonic chip

    DEFF Research Database (Denmark)

    Vo, T.D.; Hu, Hao; Galili, Michael;

    2010-01-01

    We report the first demonstration of all-optical Tbaud switching on a compact photonic chip. A 1.28 Tbaud return-to-zero signal was demultiplexed via four-wave mixing in a highly nonlinear, dispersion-engineered 7-cm Chalcogenide planar waveguide.......We report the first demonstration of all-optical Tbaud switching on a compact photonic chip. A 1.28 Tbaud return-to-zero signal was demultiplexed via four-wave mixing in a highly nonlinear, dispersion-engineered 7-cm Chalcogenide planar waveguide....

  9. F-Alloy: An Alloy Based Model Transformation Language

    OpenAIRE

    Gammaitoni, Loïc; Kelsen, Pierre

    2015-01-01

    Model transformations are one of the core artifacts of a model-driven engineering approach. The relational logic language Alloy has been used in the past to verify properties of model transformations. In this paper we introduce the concept of functional Alloy modules. In essence a functional Alloy module can be viewed as an Alloy module representing a model transformation. We describe a sublanguage of Alloy called F-Alloy that allows the specification of functional Alloy modules. Module...

  10. PLUTONIUM-THORIUM ALLOYS

    Science.gov (United States)

    Schonfeld, F.W.

    1959-09-15

    New plutonium-base binary alloys useful as liquid reactor fuel are described. The alloys consist of 50 to 98 at.% thorium with the remainder plutonium. The stated advantages of these alloys over unalloyed plutonium for reactor fuel use are easy fabrication, phase stability, and the accompanying advantuge of providing a means for converting Th/sup 232/ into U/sup 233/.

  11. A first principles study of phase stability, bonding, electronic and lattice dynamical properties of beryllium chalcogenides at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar 364001 (India); Mankad, Venu [Central Institute of Plastic Engineering and Technology, Ahmedabad (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390002 (India)

    2014-12-25

    Highlights: • First principles calculations are performed for BeS, BeSe and BeTe in B3, B8 and B1 phases. • They are indirect wide band gap semiconductors stable in B3 phase at ambient condition. • Phonon calculations at ambient and high pressure are reported. • The NiAs phase is dynamically stable at high pressure. - Abstract: The present paper reports a detailed and systematic theoretical study of structural, mechanical, electronic, vibrational and thermodynamical properties of three beryllium chalcogenides BeS, BeSe and BeTe in zinc blende, NiAs and rock salt phases by performing ab initio calculations based on density-functional theory. The calculated value of lattice constants and bulk modulus are compared with the available experimental and other theoretical data and found to agree reasonably well. These compounds are indirect wide band gap semiconductors with a partially ionic contribution in all considered three phases. The zinc blende phase of these chalcogenides is found stable at ambient condition and phase transition from zinc blende to NiAs structure is found to occur. The bulk modulus, its pressure derivative, anisotropic factor, Poission’s ratio, Young’s modulus for these are also calculated and discussed. The phonon dispersion curves of these beryllium chalcogenides in zinc blende phase depict their dynamical stability in this phase at ambient condition. We have also estimated the temperature variation of specific heat at constant volume, entropy and Debye temperature for these compounds in zinc blende phase. The variation of lattice-specific heat with temperature obeys the classical Dulong–Petit’s law at high temperature, while at low-temperature it obeys the Debye’s T{sup 3} law.

  12. Ultrafast laser fabrication of low-loss waveguides in chalcogenide glass with 0.65 dB/cm loss.

    Science.gov (United States)

    McMillen, Ben; Zhang, Botao; Chen, Kevin P; Benayas, Antonio; Jaque, Daniel

    2012-05-01

    This Letter reports on the fabrication of low-loss waveguides in gallium-lanthanum-sulfide chalcogenide glasses using an ultrafast laser. Spatial beam shaping and temporal pulse width tuning were used to optimize the guided mode profiles and optical loss of laser-written waveguides. Highly symmetric single-mode waveguides guiding at 1560 nm with a loss of 0.65  dB/cm were fabricated using 1.5 ps laser pulses. This Letter suggests a pathway to produce high quality optical waveguides in substrates with strong nonlinearity using the ultrafast laser direct writing technique.

  13. Time-resolved terahertz spectroscopy of charge carrier dynamics in the chalcogenide glass As30Se30Te40 [Invited

    DEFF Research Database (Denmark)

    Wang, Tianwu; Romanova, Elena A.; Abdel-Moneim, Nabil;

    2016-01-01

    Broadband (1.6-18 THz) terahertz time-domain spectroscopy (THz-TDS) and time-resolved terahertz spectroscopy (TRTS) were performed on a 54 mu m thick chalcogenide glass (As30Se30Te40) sample with a two-color laser-induced air plasma THz system in transmission and reflection modes, respectively. Two...... absorption bands at 2-3 and 5-8 THz were observed. TRTS reveals an ultrafast relaxation process of the photoinduced carrier response, well described by a rate equation model with a finite concentration of mid-bandgap trap states for self-trapped excitons. The photoinduced conductivity can be well described...

  14. Demonstration of CO2-laser power delivery through chalcogenide-glass fiber with negative-curvature hollow core.

    Science.gov (United States)

    Kosolapov, Alexey F; Pryamikov, Andrey D; Biriukov, Alexander S; Shiryaev, Vladimir S; Astapovich, Maxim S; Snopatin, Gennady E; Plotnichenko, Victor G; Churbanov, Mikhail F; Dianov, Evgeny M

    2011-12-05

    A technologically simple optical fiber cross-section structure with a negative-curvature hollow-core has been proposed for the delivery of the CO2 laser radiation. The structure was optimized numerically and then realized using Te20As30Se50 (TAS) chalcogenide glass. Guidance of the 10.6 µm СО2-laser radiation through this TAS-glass hollow-core fiber has been demonstrated. The loss at λ=10.6 μm was amounted ~11 dB/m. A resonance behavior of the fiber bend loss as a function of the bend radius has been revealed.

  15. High strength alloys

    Energy Technology Data Exchange (ETDEWEB)

    Maziasz, Phillip James [Oak Ridge, TN; Shingledecker, John Paul [Knoxville, TN; Santella, Michael Leonard [Knoxville, TN; Schneibel, Joachim Hugo [Knoxville, TN; Sikka, Vinod Kumar [Oak Ridge, TN; Vinegar, Harold J [Bellaire, TX; John, Randy Carl [Houston, TX; Kim, Dong Sub [Sugar Land, TX

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  16. High strength alloys

    Science.gov (United States)

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J.; John, Randy Carl; Kim, Dong Sub

    2012-06-05

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

  17. Ultrafast spectroscopic investigations of cadmium chalcogenides: Nanoscale electronic relaxation and transfer

    Science.gov (United States)

    Spann, Bryan Thomas

    Harnessing solar energy more effectively remains one of the most important scientific challenges in recent history. Various strategies have been developed to capture the sun's energy to generate usable electricity. Recently, advances in chemistry have allowed researchers to synthesize semiconducting nanocrystals which show great promise in capturing and converting solar energy in a cheap and efficient way. In this dissertation, aspects of energy conversion processes in semiconducting nanocrystals are explored to elucidate their potential for photovoltaic applications. Various forms of linear and non-linear optical spectroscopy techniques were employed to explore electronic relaxation and transfer phenomena in nanoscale cadmium chalcogenide materials and heterojunctions. Ultrafast transient absorption studies were performed on various sizes of CdSe quantum dots (QDs) and quantum rods (QRs) with similar bandedge energies. These studies reviled that QRs have increased intraband relaxation times when compared with QDs as a result of an ultrafast formation of a 1D exciton along the elongated axis of the QR. The formation of the 1D exciton reduces the electron-to-hole scattering potential, consequently reducing the Auger thermalization mechanism. Furthermore, QD samples made in film form showed increased intraband relaxation times as a result of a hydrazine treatment which removed (in part) the organic ligands attached to the surface. As a result of removing the ligands, the ligand based relaxation pathway for the holes was also reduced, causing longer intraband relaxation. In addition to the studies on CdSe nanocrystals (NCs), ultrafast spectroscopy was used to study aspects of charge transfer in CdS -- TiO2 NC heterojunctions. This study revealed a means of increasing photo-induced ultrafast charge transfer in successive ionic layer adsorption and reaction (SILAR) CdS--TiO2 NC heterojunctions using pulsed laser sintering of TiO2 nanocrystals. The enhanced charge

  18. Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

    Science.gov (United States)

    Lin, Qianglu

    Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum

  19. Creep Resistant Zinc Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  20. Biocompatibility of dental alloys

    Energy Technology Data Exchange (ETDEWEB)

    Braemer, W. [Heraeus Kulzer GmbH and Co. KG, Hanau (Germany)

    2001-10-01

    Modern dental alloys have been used for 50 years to produce prosthetic dental restorations. Generally, the crowns and frames of a prosthesis are prepared in dental alloys, and then veneered by feldspar ceramics or composites. In use, the alloys are exposed to the corrosive influence of saliva and bacteria. Metallic dental materials can be classified as precious and non-precious alloys. Precious alloys consist of gold, platinum, and small amounts of non-precious components such as copper, tin, or zinc. The non-precious alloys are based on either nickel or cobalt, alloyed with chrome, molybdenum, manganese, etc. Titanium is used as Grade 2 quality for dental purposes. As well as the dental casting alloys, high purity electroplated gold (99.8 wt.-%) is used in dental technology. This review discusses the corrosion behavior of metallic dental materials with saliva in ''in vitro'' tests and the influence of alloy components on bacteria (Lactobacillus casei and Streptococcus mutans). The test results show that alloys with high gold content, cobalt-based alloys, titanium, and electroplated gold are suitable for use as dental materials. (orig.)

  1. Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Adam, Adam Abdalla Elbashir [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China); Alneelain University, Faculty of Science and Technology, Khartoum (Sudan); Cheng, Xiaomin; Guan, Xiawei; Miao, Xiangshui [Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan (China); Wuhan National Laboratory for Optoelectronics, Wuhan (China)

    2014-12-15

    In this work, an effective method to modulate the ferromagnetic properties of Mn-doped GeTe chalcogenide-based phase change materials is presented. The microstructure of the phase change magnetic material Ge{sub 1-x} Mn{sub x} Te thin films was studied. The X-ray diffraction results demonstrate that the as-deposited films are amorphous, and the crystalline films are formed after annealing at 350 C for 10 min. Crystallographic structure investigation shows the existence of some secondary magnetic phases. The lattice parameters of Ge{sub 1-x} Mn{sub x} Te (x = 0.04, 0.12 and 0.15) thin films are found to be slightly different with changes of Mn compositions. The structural analysis clearly indicates that all the films have a stable rhombohedral face-centered cubic polycrystalline structure. The magnetic properties of the amorphous and crystalline Ge{sub 0.96}Mn{sub 0.04}Te were investigated. The measurements of magnetization (M) as a function of the magnetic field (H) show that both amorphous and crystalline phases of Ge{sub 0.96}Mn{sub 0.04}Te thin film are ferromagnetic and there is drastic variation between amorphous and crystalline states. The temperature (T) dependence of magnetizations at zero field cooling (ZFC) and field cooling (FC) conditions of the crystalline Ge{sub 0.96}Mn{sub 0.04}Te thin film under different applied magnetic fields were performed. The measured data at 100 and 300 Oe applied magnetic fields show large bifurcations in the ZFC and FC curves while on the 5,000 Oe magnetic field there is no deviation. (orig.)

  2. Microorganism mediated biosynthesis of metal chalcogenides; a powerful tool to transform toxic effluents into functional nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Vena, M. Paula; Jobbágy, Matías; Bilmes, Sara A., E-mail: sarabil@qi.fcen.uba.ar

    2016-09-15

    Cadmium contained in soil and water can be taken up by certain crops and aquatic organisms and accumulate in the food-chain, thus removal of Cd from mining or industrial effluents – i.e. Ni-Cd batteries, electroplating, pigments, fertilizers – becomes mandatory for human health. In parallel, there is an increased interest in the production of luminescent Q-dots for applications in bioimaging, sensors and electronic devices, even the present synthesis methods are economic and environmentally costly. An alternative green pathway for producing Metal chalcogenides (MC: CdS, CdSe, CdTe) nanocrystals is based on the metabolic activity of living organisms. Intracellular and extracellular biosynthesis of can be achieved within a biomimetic approach feeding living organisms with Cd precursors providing new routes for combining bioremediation with green routes for producing MC nanoparticles. In this mini-review we present the state-of-the-art of biosynthesis of MC nanoparticles with a critical discussion of parameters involved and protocols. Few existing examples of scaling-up are also discussed. A modular reactor based on microorganisms entrapped in biocompatible mineral matrices – already proven for bioremediation of dissolved dyes – is proposed for combining both Cd-depletion and MC nanoparticle's production. - Highlights: • Removal of heavy metals by living matter is feasible trough biosorption and bioaccumulation • Algae, fungi, bacteria and yeasts can synthesize CdS, CdSe and CdTe Q-dots • Encapsulation of microorganisms in mineral gels provides building blocks for reactor design. • Depletion of Cd with production of Q-dots can be achieved with modular bioreactors with entrapped cells.

  3. Two new ternary lanthanide antimony chalcogenides: Yb4Sb2S11.25 and Tm4Sb2Se11.68 containing chalcogenide Q2- and dichalcogenide (Q2)2- anions

    Science.gov (United States)

    Babo, Jean-Marie; Albrecht-Schmitt, Thomas E.

    2012-03-01

    Dark red and dark brown crystals of Yb4Sb2S11.25 and Tm8Sb4Se11.68, respectively, were obtained from the reaction of the elements in Sb2Q3 (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q2- and dichalcogenide (Q2)2- anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb4Sb2S11.25 and Tm4Sb2Se11.75, respectively.

  4. Phase change memory based on SnSe{sub 4} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Karanja, J.M.; Karimi, P.M.; Njoroge, W.K. [Physics Department, Kenyatta University, P.O. Box 43844, Nairobi (Kenya); Wamwangi, D.M., E-mail: Daniel.Wamwangi@wits.ac.za [School of Physics, University of the Witwatersrand, Private Bag 3, 2050 (South Africa)

    2013-01-01

    A phase change alloy has been synthesized and characterized. The reversible phase transitions between amorphous and crystalline states of SnSe{sub 4} films have been studied using variable electrical pulses and X-ray diffraction. Temperature dependent sheet resistance measurements have shown two distinct resistivity states of more than two orders of magnitude. This high electrical contrast makes the alloy suitable for nonvolatile phase change memory applications. X-ray diffraction has attributed the large electrical contrast to an amorphous–crystalline phase transition. The nonvolatile memory cells have been fabricated using a simple sandwich structure (metal/chalcogenide thin film/metal). A threshold voltage of 3.71 V has been determined for this phase change random access memory cell. Memory switching was initiated using the voltage pulses of 3.71 V, 90 ns, 1.3 V and 26 μs, for the crystallization and amorphization process, respectively. - Highlights: ► Phase transition of SnSe{sub 4} alloys with high set resistivity of 1.43 Ωm ► High transition temperatures of 174 °C ► Transition due to amorphous–crystalline changes ► Threshold switching at a high threshold voltage of 3.71 V.

  5. New Approaches to the Computer Simulation of Amorphous Alloys: A Review

    Directory of Open Access Journals (Sweden)

    Fernando Alvarez-Ramirez

    2011-04-01

    Full Text Available In this work we review our new methods to computer generate amorphous atomic topologies of several binary alloys: SiH, SiN, CN; binary systems based on group IV elements like SiC; the GeSe2 chalcogenide; aluminum-based systems: AlN and AlSi, and the CuZr amorphous alloy. We use an ab initio approach based on density functionals and computationally thermally-randomized periodically-continued cells with at least 108 atoms. The computational thermal process to generate the amorphous alloys is the undermelt-quench approach, or one of its variants, that consists in linearly heating the samples to just below their melting (or liquidus temperatures, and then linearly cooling them afterwards. These processes are carried out from initial crystalline conditions using short and long time steps. We find that a step four-times the default time step is adequate for most of the simulations. Radial distribution functions (partial and total are calculated and compared whenever possible with experimental results, and the agreement is very good. For some materials we report studies of the effect of the topological disorder on their electronic and vibrational densities of states and on their optical properties.

  6. Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, Oleh [Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, 42200, Czestochowa (Poland); Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Filipecki, Jacek [Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Shpotyuk, Mykhaylo [Lviv Scientific Research Institute of Materials, SRC ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Department of Semiconductor Electronics, Lviv Polytechnic National University, Bandery str. 12, 79013 Lviv (Ukraine)

    2013-01-15

    Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As{sub 2}S{sub 3} chalcogenide glassy semiconductors after {gamma}-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As{sub 4}{sup +}; S{sub 1}{sup -}) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As{sub 2}S{sub 3} is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Effect of Sn doping on nonlinear optical properties of quaternary Se-Sn-(Bi,Te) chalcogenide thin films

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2015-08-01

    The aim of this work is to report the effect of Sn doping on the third order nonlinear optical properties of chalcogenide Se84-xTe15Bi1.0Snx thin films. Melt quenching technique has been used for the preparation of bulk chalcogenide glasses. Thin films of the studied composition are deposited on cleaned glass substrate by thermal evaporation technique. Optical band gap (Eg) is calculated by using Tauc extrapolation method and is found to increase from 1.27 eV to 1.64 eV with the incorporation of Sn content. Stryland approach is utilized for the calculation of two photon absorption coefficient (β2). The nonlinear refractive index (n2) and third order susceptibility (χ(3) are calculated using Tichy and Ticha approach. The result shows that nonlinear refractive index (n2) follows the same trend as that of linear refractive index (n). The values of n2 of studied composition as compared to pure silica are 1000-5000 times higher.

  8. First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

    Science.gov (United States)

    Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D.

    2016-08-01

    Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger [Phys. Rev. Lett. 108, 068701 (2012)] is used as a metric for the screening. After constructing the current-voltage curve, the SLME is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with II = Cd and Hg, and Cu2-II-SnS4 with II = Cd, Hg, and Zn have a higher theoretical efficiency compared with the materials currently used as absorber layer.

  9. Nonlinear Label-Free Biosensing With High Sensitivity Using As2S3 Chalcogenide Tapered Fiber

    DEFF Research Database (Denmark)

    Markos, Christos; Bang, Ole

    2015-01-01

    We demonstrate an experimentally feasible fiber design, which can act as a highly sensitive, label-free, and selective biosensor using the inherent high nonlinearity of an As2S3 chalcogenide tapered fiber. The surface immobilization of the fiber with an antigen layer can provide the possibility t......, this high sensitivity can be obtained using a low-power 1064-nm microchip laser....

  10. GeS2-In2S3-CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence.

    Science.gov (United States)

    Li, Legang; Bian, Junyi; Jiao, Qing; Liu, Zijun; Dai, Shixun; Lin, Changgui

    2016-11-21

    Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm(3+), Er(3+), and Dy(3+)) doped 65GeS2-25In2S3-10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides the luminescence spectra of a full near- and mid-IR spectral range from 1 to 4 μm in rare earth ions doped chalcogenide glasses. The results of absorption spectra, luminescence spectra, and fluorescence decay curves were obtained in these samples with singly-, co- and triply-doping behaviors of Tm(3+), Er(3+), and Dy(3+) ions. In order to search possible efficient IR emissions, the luminescence behavior was investigated specifically with the variation of doping behaviors and dopant ions, especially in the samples co- and triply-doped active ions. The results suggest that favorable near- and mid-IR luminescence of rare earth ions can be further modified in chalcogenide glasses through an elaborated design of doping behavior and optically active ions.

  11. GeS2–In2S3–CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence

    Science.gov (United States)

    Li, Legang; Bian, Junyi; Jiao, Qing; Liu, Zijun; Dai, Shixun; Lin, Changgui

    2016-11-01

    Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm3+, Er3+, and Dy3+) doped 65GeS2–25In2S3–10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides the luminescence spectra of a full near- and mid-IR spectral range from 1 to 4 μm in rare earth ions doped chalcogenide glasses. The results of absorption spectra, luminescence spectra, and fluorescence decay curves were obtained in these samples with singly-, co- and triply-doping behaviors of Tm3+, Er3+, and Dy3+ ions. In order to search possible efficient IR emissions, the luminescence behavior was investigated specifically with the variation of doping behaviors and dopant ions, especially in the samples co- and triply-doped active ions. The results suggest that favorable near- and mid-IR luminescence of rare earth ions can be further modified in chalcogenide glasses through an elaborated design of doping behavior and optically active ions.

  12. Thulium pumped mid-infrared 0.9–9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers

    DEFF Research Database (Denmark)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech;

    2014-01-01

    We theoretically demonstrate a novel approach for generating Mid-InfraRed SuperContinuum (MIR SC) by using concatenated fluoride and chalcogenide glass fibers pumped with a standard pulsed Thulium (Tm) laser (TFWHM=3.5ps, P0=20kW, νR=30MHz, and Pavg=2W). The fluoride fiber SC is generated in 10m ...

  13. Catalyst Alloys Processing

    Science.gov (United States)

    Tan, Xincai

    2014-10-01

    Catalysts are one of the key materials used for diamond formation at high pressures. Several such catalyst products have been developed and applied in China and around the world. The catalyst alloy most widely used in China is Ni70Mn25Co5 developed at Changsha Research Institute of Mining and Metallurgy. In this article, detailed techniques for manufacturing such a typical catalyst alloy will be reviewed. The characteristics of the alloy will be described. Detailed processing of the alloy will be presented, including remelting and casting, hot rolling, annealing, surface treatment, cold rolling, blanking, finishing, packaging, and waste treatment. An example use of the catalyst alloy will also be given. Industrial experience shows that for the catalyst alloy products, a vacuum induction remelt furnace can be used for remelting, a metal mold can be used for casting, hot and cold rolling can be used for forming, and acid pickling can be used for metal surface cleaning.

  14. PLUTONIUM-ZIRCONIUM ALLOYS

    Science.gov (United States)

    Schonfeld, F.W.; Waber, J.T.

    1960-08-30

    A series of nuclear reactor fuel alloys consisting of from about 5 to about 50 at.% zirconium (or higher zirconium alloys such as Zircaloy), balance plutonium, and having the structural composition of a plutonium are described. Zirconium is a satisfactory diluent because it alloys readily with plutonium and has desirable nuclear properties. Additional advantages are corrosion resistance, excellent fabrication propenties, an isotropie structure, and initial softness.

  15. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  16. Electron-phonon coupling and structural phase transitions in early transition metal oxides and chalcogenides

    Science.gov (United States)

    Farley, Katie Elizabeth

    Pronounced nonlinear variation of electrical transport characteristics as a function of applied voltage, temperature, magnetic field, strain, or photo-excitation is usually underpinned by electronic instabilities that originate from the complex interplay of spin, orbital, and lattice degrees of freedom. This dissertation focuses on two canonical materials that show pronounced discontinuities in their temperature-dependent resistivity as a result of electron---phonon and electron---electron correlations: orthorhombic TaS3 and monoclinic VO2. Strong electron-phonon interactions in transition metal oxides and chalcogenides results in interesting structural and electronic phase transitions. The properties of the material can be changed drastically in response to external stimuli such as temperature, voltage, or light. Understanding the influence these interactions have on the electronic structure and ultimately transport characteristics is of utmost importance in order to take these materials from a fundamental aspect to prospective applications such as low-energy interconnects, steep-slope transistors, and synaptic neural networks. This dissertation describes synthetic routes to nanoscale TaS3 and VO2, develops mechanistic understanding of their electronic instabilities, and in the case of the latter system explores modulation of the electronic and structural phase transition via the incorporation of substitutional dopant atoms. We start in chapter 2 with a detailed study of the synthesis and electronic transport properties of TaS3, which undergoes a Peierls' distortion to form a charge density wave. Scaling this material down to the nanometer-sized regime allows for interrogation of single or discrete phase coherent domains. Using electrical transport and broad band noise measurements, the dynamics of pinning/depinning of the charge density wave is investigated. Chapter 3 provides a novel synthetic approach to produce high-edge-density MoS2 nanorods. MoS2 is a

  17. Chalcogenide glass mid-infrared on-chip sensor for chemical sensing

    Science.gov (United States)

    Lin, Hongtao

    Chemical sensing in the mid-infrared (mid-IR) has been considered to be significant for molecular detection for decades, but until recently has mostly relied on benchtop spectroscopic instruments like Fourier transform infrared spectrometers, etc. Recent strides in planar photonic integration envision compact, standalone "sensor-on-a-chip" devices for molecular analysis as a potentially disruptive technology as compared to their conventional bulky counterparts. However, the difficulty of achieving adequate sensitivity in integrated optical sensors is still a key barrier towards their practical application, limited by the weak interactions between photons and molecules over the short optical path length accessible on a chip. To solve the sensitivity challenge, a novel mid-IR photothermal spectroscopic sensing technique was proposed and theoretically examined. Through dramatically amplified photothermal effects in an optical nano-cavity doubly resonant at both mid-IR pump and near infrared probe wavelengths, a device design based on nested 1-D nanobeam photonic crystal cavities is numerically analyzed to demonstrate the technique's potential for single small gas molecule detection without the need for cryogenically cooled mid-IR photo-detectors. Furthermore, since silica becomes opaque at wavelengths beyond 3.5 microm, new material platforms and fabrication techniques are needed for mid-IR on-chip chemical sensors. Chalcogenide glasses (ChG), amorphous compounds containing S, Se and Te, are ideal material choices for mid-IR chemical sensors given their broad mid-IR transparency window, large photothermal figure-of-merit, amorphous structure and low processing temperature. A ChG lift-off process and a nano-fabrication technique using focused ion beam milling have been developed to fabricate mid-IR ChG resonators and photonic crystal waveguide cavities. ChG resonators on CaF2 substrate claimed a high quality factor around 4 x 105. Using these devices, we have also

  18. Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

  19. A comparison of thermoelectric phenomena in diverse alloy systems

    Energy Technology Data Exchange (ETDEWEB)

    Cook, Bruce [Iowa State Univ., Ames, IA (United States)

    1999-01-01

    The study of thermoelectric phenomena in solids provides a wealth of opportunity for exploration of the complex interrelationships between structure, processing, and properties of materials. As thermoelectricity implies some type of coupled thermal and electrical behavior, it is expected that a basic understanding of transport behavior in materials is the goal of such a study. However, transport properties such as electrical resistivity and thermal diffusivity cannot be fully understood and interpreted without first developing an understanding of the material's preparation and its underlying structure. It is the objective of this dissertation to critically examine a number of diverse systems in order to develop a broad perspective on how structure-processing-property relationships differ from system to system, and to discover the common parameters upon which any good thermoelectric material is based. The alloy systems examined in this work include silicon-germanium, zinc oxide, complex intermetallic compounds such as the half-Heusler MNiSn, where M = Ti, Zr, or Hf, and rare earth chalcogenides.

  20. NICKEL-BASE ALLOY

    Science.gov (United States)

    Inouye, H.; Manly, W.D.; Roche, T.K.

    1960-01-19

    A nickel-base alloy was developed which is particularly useful for the containment of molten fluoride salts in reactors. The alloy is resistant to both salt corrosion and oxidation and may be used at temperatures as high as 1800 deg F. Basically, the alloy consists of 15 to 22 wt.% molybdenum, a small amount of carbon, and 6 to 8 wt.% chromium, the balance being nickel. Up to 4 wt.% of tungsten, tantalum, vanadium, or niobium may be added to strengthen the alloy.

  1. Ductile transplutonium metal alloys

    Science.gov (United States)

    Conner, William V.

    1983-01-01

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as sources of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  2. KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

    KAUST Repository

    Ahmed, Ejaz

    2015-01-01

    The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

  3. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-11-21

    Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

  4. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  5. Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

    2016-06-16

    Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

  6. Extended free-volume defects in chalcogenide glassy semiconductors induced by high-energy {gamma}-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Balitska, Valentina [Lviv Institute of Materials of SRC (Ukraine); State University of Vital Activity Safety, Lviv 79007 (Ukraine); Filipecki, Jacek; Shpotyuk, Oleh [Institute of Physics, Jan Dlugosz University, Czestochowa (Poland)

    2009-08-15

    It was shown that under-coordinated topological defects induced by high-energy {gamma}-irradiation can be a reason for significant changes in positron annihilation lifetime spectra of multicomponent chalcogenide glassy semiconductors within ternary Ge-As(Sb)-S systems. In the case of negatively-charged sulphur and arsenic atoms, the excess of free volume is quite enough to produce additional input in the second defect-related channel of positron trapping, while under-coordinated germanium atoms are practically non-detectable with this technique because of low associated free volume. Despite radiation-induced densification, the average positron lifetime demonstrate both growing and decaying tendencies after {gamma}-irradiation depending on glass composition. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Characterization of the optical constants and dispersion parameters of chalcogenide Te40Se30S30 thin film: thickness effect

    Science.gov (United States)

    Abd-Elrahman, M. I.; Hafiz, M. M.; Qasem, Ammar; Abdel-Rahim, M. A.

    2016-02-01

    Chalcogenide Te40Se30S30 thin films of different thickness (100-450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.

  8. Experimental versus expected halide-ion size differences; structural changes in three series of isotypic bismuth chalcogenide halides.

    Science.gov (United States)

    Keller, Egbert; Krämer, Volker

    2006-06-01

    Experimentally determined halide-ion size differences are compared with expected size differences in the three series of isotypic bismuth chalcogenide halide compounds, KBi(6)O(9)X (X = Cl, Br and I), BiOX (X = F, Cl, Br and I) and BiSX (X = Cl, Br and I). The strong deviations observed can be assigned to steric strain caused by the heterogeneity of the bond-valence pattern and (for BiOX) to anion-anion repulsion and a change in the connectivity scheme. Some special features of the BiOF structure and the question of "isotypism" within the BiOX series are briefly discussed. Structural changes within the BiSX series are analysed.

  9. A Tapered Chalcogenide Microstructured Optical Fiber for Mid-IR Parabolic Pulse Generation: Design and Performance Study

    CERN Document Server

    Barh, Ajanta; Varshney, Ravi K; Pal, Bishnu P

    2013-01-01

    This paper presents a theoretical design of chalcogenide glass based tapered microstructured optical fiber (MOF) to generate high power parabolic pulses (PPs) at the mid-IR wavelength (~ 2 {\\mu}m). We optimize fiber cross-section by the multipole method and studied pulse evolution by well known Symmetrized Split-Step Fourier Method. Our numerical investigation reveals the possibility of highly efficient PP generation within a very short length (~ 18 cm) of this MOF for a Gaussian input pulse of 60 W peak power and FWHM of 3.5 ps. We examined quality of the generated PP by calculating the misfit parameter including the third order dispersion and fiber loss. Further, the effects of variations in input pulse power, pulse width and pulse energy on generated PP were also studied.

  10. Temperature dependence of magnetic anisotropy constant in iron chalcogenide Fe3Se4: Excellent agreement with theories

    Science.gov (United States)

    Wang, Jun; Duan, Hongyan; Lin, Xiong; Aguilar, Victor; Mosqueda, Aaron; Zhao, Guo-meng

    2012-01-01

    Magnetic hysteresis loops were measured for ferrimagnetic iron chalcogenide Fe3Se4 nanoparticles in the whole temperature range below the Curie temperature TC (315 K). The coercivity of the material is huge, reaching about 40 kOe at 10 K. The magnetic anisotropy constant K was determined from the magnetic hysteresis loop using the law of approach to saturation. The deduced anisotropy constant at 10 K is 5.22×106 erg/cm3, which is over one order of magnitude larger than that of Fe3O4. We also demonstrated that the experimental magnetic hysteresis loop is in good agreement with the theoretical curve calculated by Stoner and Wohlfarth for a noninteracting randomly oriented uniaxial single-domain particle system. Moreover, we show that K is proportional to the cube of the saturation magnetization Ms, which confirms earlier theoretical models for uniaxial magnets. PMID:23258940

  11. Temperature dependence of magnetic anisotropy constant in iron chalcogenide Fe(3)Se(4): Excellent agreement with theories.

    Science.gov (United States)

    Wang, Jun; Duan, Hongyan; Lin, Xiong; Aguilar, Victor; Mosqueda, Aaron; Zhao, Guo-Meng

    2012-11-15

    Magnetic hysteresis loops were measured for ferrimagnetic iron chalcogenide [Formula: see text] nanoparticles in the whole temperature range below the Curie temperature [Formula: see text] (315 K). The coercivity of the material is huge, reaching about 40 kOe at 10 K. The magnetic anisotropy constant K was determined from the magnetic hysteresis loop using the law of approach to saturation. The deduced anisotropy constant at 10 K is [Formula: see text], which is over one order of magnitude larger than that of [Formula: see text]. We also demonstrated that the experimental magnetic hysteresis loop is in good agreement with the theoretical curve calculated by Stoner and Wohlfarth for a noninteracting randomly oriented uniaxial single-domain particle system. Moreover, we show that K is proportional to the cube of the saturation magnetization [Formula: see text], which confirms earlier theoretical models for uniaxial magnets.

  12. The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition.

    Science.gov (United States)

    Vorobiev, Yuri V; Horley, Paul P; Hernández-Borja, Jorge; Esparza-Ponce, Hilda E; Ramírez-Bon, Rafael; Vorobiev, Pavel; Pérez, Claudia; González-Hernández, Jesús

    2012-08-29

    This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data.

  13. Ultrahigh temperature intermetallic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Brady, M.P.; Zhu, J.H.; Liu, C.T.; Tortorelli, P.F.; Wright, J.L.; Carmichael, C.A.; Walker, L.R. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.

    1997-12-01

    A new family of Cr-Cr{sub 2}X based alloys with fabricability, mechanical properties, and oxidation resistance superior to previously developed Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys has been identified. The new alloys can be arc-melted/cast without cracking, and exhibit excellent room temperature and high-temperature tensile strengths. Preliminary evaluation of oxidation behavior at 1100 C in air indicates that the new Cr-Cr{sub 2}X based alloys form an adherent chromia-based scale. Under similar conditions, Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys suffer from extensive scale spallation.

  14. High-precision measurements of the compressibility of chalcogenide glasses at a hydrostatic pressure up to 9 GPa

    Science.gov (United States)

    Brazhkin, V. V.; Bychkov, E.; Tsiok, O. B.

    2016-08-01

    The volumes of glassy germanium chalcogenides GeSe2, GeS2, Ge17Se83, and Ge8Se92 are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe2 and GeS2 glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2-2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe2 glasses has a pronounced maximum at 3.5-4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms. The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1-2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe2 glasses. All glasses are characterized by the "loss of memory" of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge17Se83 glasses is 1.5%. The volume of the Ge8Se92 glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge17Se83 and Ge8Se92 glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe2 glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.

  15. Synthesis and solid state structures of Chalcogenide compounds of Imidazolin-2-ylidene-1,1-Diphenyl-phosphinamine

    Indian Academy of Sciences (India)

    Naktode Kishor; Suman Das; Abhinanda Kundu; Hari Pada Nayek; Tarun K Panda

    2016-03-01

    We report the synthesis and solid state structures of 1,3-di-aryl-imidazolin-2-ylidine-1,1-diphenylphosphinamine [(aryl=mesityl (1a) and aryl=2,6-diisopripyl (1b)] and their chalcogenide compounds 3-di-aryl-imidazolin-2-ylidine-P, P-diphenylphosphinicamide (2a,b), 1,3-di-aryl-imidazolin-2-ylidine-P,P diphenyl-phosphinothioicamide (3a,b) and 1,3-diaryl-imidazolin-2-ylidine-P,P -diphenyl-phosphinoselenoicamide (4a,b).The compounds 1a,b were prepared in good yield by the reaction of 1,3-di-aryl-imidazolin-2-imine and chlorodiphenylphosphine in the presence of triethylamine in toluene. The reactions of 1a,b with elemental sulphur and selenium afforded the corresponding chalcogenide compounds 3a,b and 4a,b respectively.The corresponding oxo- derivative (2a,b) was obtained by reacting compound 1a,b with 30% aqueous hydrogen peroxide in THF. The molecular structures of 1a, 2a, 3a and 4a,b have been established by single crystal X-ray diffraction analyses. The molecular structures reveal that even C1–N1–P1 angle (124.62o) in compound 1a is less obtuse compared to the corresponding C1–N1–Si1 angles (157.8o) observed in related N-silylated 2-iminoimidazolines and trimethylsilyl iminophosphoranes. C1–N1–P1 angles are further widened in compounds 2a, 3a, and 4a,b due to the attachment of chalcogen atoms onto phosphorus atom.

  16. Mg based alloys obtained by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Ordonez, S. [Univ. de Santiago de Chile (Chile). Fac. de Ingenieria; Garcia, G.; Serafini, D.; San Martin, A.

    1999-07-01

    In the present work, we studied the production of magnesium alloys, of stoichiometry 2Mg + Ni, by mechanical alloying (MA) and the behavior of the alloys under hydrogen in a Sievert`s type apparatus. The elemental powders were milled under argon atmosphere in a Spex 8000 high energy ball mill. The milled materials were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Only minimum amounts of the Mg{sub 2}Ni intermetallic compound was obtained after 22 h of milling time. Most of the material was sticked to the inner surface of the container as well as to the milling balls. Powders milled only for 12 hours transforms to the intermetallic at around 433 K. Effects of the MA on the hydrogen absorption kinetics were also studied. (orig.) 10 refs.

  17. Mid-infrared supercontinuum generation in a three-hole Ge20Sb15Se65 chalcogenide suspended-core fiber

    Science.gov (United States)

    Han, Xin; You, Chenyang; Dai, Shixun; Zhang, Peiqing; Wang, Yingying; Guo, Fangxia; Xu, Dong; Luo, Baohua; Xu, Peipeng; Wang, Xunsi

    2017-03-01

    This work experimentally demonstrates the supercontinuum (SC) generation in a three-hole arsenic free Ge20Sb15Se65 chalcogenide suspended-core fiber. Mechanical drilling was used to prepare the chalcogenide glass preform, which was drawn into suspended-core fibers. The zero-dispersion wavelength of the fiber is moved toward the shorter wavelength of about 3.2 μm through changing the fiber core diameter by controlling the pressure of inert gas during fiber drawing. When a 15 cm-long fiber with a core diameter of 6 μm is pumped using 150 fs pulses at 3.3 μm, SC spanning from ∼3 μm to ∼8 μm was generated.

  18. Universal behavior of chalcogenides of rare-earth metals in the transition to a state with intermediate valence at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Tsiok, O. B.; Khvostantsev, L. G.; Brazhkin, V. V., E-mail: brazhkin@hppi.troitsk.ru [Russian Academy of Sciences, Vereshchagin Institute of High-Pressure Physics (Russian Federation)

    2015-06-15

    Precision measurements of resistivity, thermopower, and volume are performed for TmS, TmSe, and TmTe under a hydrostatic pressure up to 8 GPa. Comparison of the transport properties and volume of TmTe and SmTe in the valence transition region demonstrates a complete analogy up to quantitative coincidence. It is shown that the thermopower of all thulium and samarium chalcogenides in the lattice collapse region and in subsequent rearrangement of the electron spectrum in a wide range of pressures follow a universal dependence corresponding the passage of the Fermi level through the peak of the density of states (DOS). The results are considered in the context of ideas about the exciton nature of the intermediate valence in chalcogenides of rare-earth metals.

  19. TUNGSTEN BASE ALLOYS

    Science.gov (United States)

    Schell, D.H.; Sheinberg, H.

    1959-12-15

    A high-density quaternary tungsten-base alloy having high mechanical strength and good machinability composed of about 2 wt.% Ni, 3 wt.% Cu, 5 wt.% Pb, and 90wt.% W is described. This alloy can be formed by the powder metallurgy technique of hot pressing in a graphite die without causing a reaction between charge and the die and without formation of a carbide case on the final compact, thereby enabling re-use of the graphite die. The alloy is formable at hot- pressing temperatures of from about 1200 to about 1350 deg C. In addition, there is little component shrinkage, thereby eliminating the necessity of subsequent extensive surface machining.

  20. Dielectric relaxation in glassy Se75In25−Pb alloys

    Indian Academy of Sciences (India)

    J Sharma; S Kumar

    2010-03-01

    In this paper we report the effect of Pb incorporation in the dielectric properties of a-Se75In25 glassy alloy. The temperature and frequency dependence of the dielectric constants and the dielectric losses in glassy Se75In25−Pb ( = 0, 5, 10 and 15) alloys in the frequency range (1 kHz–5 MHz) and temperature range (300–340 K) have been measured. A detailed analysis shows that the dielectric losses are dipolar in nature and can be understood in terms of hopping of charge carriers over a potential barrier as suggested by Elliott for the case of chalcogenide glasses. It has been found that both dielectric constant and the dielectric loss are highly dependent on frequency and temperature and also found to increase with increasing concentration of Pb in binary a-Se 75 In 25 glassy system. The results have been interpreted in terms of increase in the density of defect states by the incorporation of Pb as a metallic additive in the aforesaid glassy system.

  1. Standard Specification for Copper-Aluminum-Silicon-Cobalt Alloy, Copper-Nickel-Silicon-Magnesium Alloy, Copper-Nickel-Silicon Alloy, Copper-Nickel-Aluminum-Magnesium Alloy, and Copper-Nickel-Tin Alloy Sheet and Strip

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2015-01-01

    Standard Specification for Copper-Aluminum-Silicon-Cobalt Alloy, Copper-Nickel-Silicon-Magnesium Alloy, Copper-Nickel-Silicon Alloy, Copper-Nickel-Aluminum-Magnesium Alloy, and Copper-Nickel-Tin Alloy Sheet and Strip

  2. Thulium pumped mid-infrared 0.9-9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers.

    Science.gov (United States)

    Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech; Seddon, Angela; Benson, Trevor; Brilland, Laurent; Méchin, David; Moselund, Peter M; Bang, Ole

    2014-02-24

    We theoretically demonstrate a novel approach for generating Mid-InfraRed SuperContinuum (MIR SC) by using concatenated fluoride and chalcogenide glass fibers pumped with a standard pulsed Thulium (Tm) laser (T(FWHM)=3.5ps, P0=20kW, ν(R)=30MHz, and P(avg)=2W). The fluoride fiber SC is generated in 10m of ZBLAN spanning the 0.9-4.1μm SC at the -30dB level. The ZBLAN fiber SC is then coupled into 10cm of As2Se3 chalcogenide Microstructured Optical Fiber (MOF) designed to have a zero-dispersion wavelength (λ(ZDW)) significantly below the 4.1μm InfraRed (IR) edge of the ZBLAN fiber SC, here 3.55μm. This allows the MIR solitons in the ZBLAN fiber SC to couple into anomalous dispersion in the chalcogenide fiber and further redshift out to the fiber loss edge at around 9μm. The final 0.9-9μm SC covers over 3 octaves in the MIR with around 15mW of power converted into the 6-9μm range.

  3. Single step preparation of quaternary Cu2ZnSnSe4 thin films by RF magnetron sputtering from binary chalcogenide targets

    Science.gov (United States)

    Wibowo, Rachmat Adhi; Kim, Woo Seok; Lee, Eun Soo; Munir, Badrul; Kim, Kyoo Ho

    2007-10-01

    Cu2ZnSnSe4 (CZTSe) thin films were grown in a single step procedure by RF magnetron sputtering from a compacted powder consisting of blended chalcogenides. Targets with various chalcogenide mole ratios were designed for the purpose of preparing stoichiometric as-grown films. The material concentrations of the films grown at room temperature were found to depend on the mole ratio of the chalcogenides in the targets. It was found that a significant deviation of material concentration of the films from ideal stoichiometry led to the formation of CuSe, ZnSe and SnSe secondary phases. CZTSe films with a stannite phase could be grown even at room temperature from the sputtering target containing Cu2Se with corresponding growth orientations of (101), (112), (220/204), (312/116) and (332/316). The p-type CZTSe film grown at a substrate temperature of 150C showed a high absorption coefficient of 10cm with an optical band gap of 1.56 eV, resistivity as low as 1.482Ωcm and carrier concentration of 1×10cm. These results suggested that the control of the target compositions was crucial to grow single phase and stoichiometric quaternary CZTSe films.

  4. Strength of Hard Alloys,

    Science.gov (United States)

    Partial replacement of titanium carbide by tantalum carbide in three-phase WC-TiC-Co alloys tends to have a favorable effect on mechanical properties such as fatigue strength under bending and impact durability.

  5. Alloy Selection System

    Energy Technology Data Exchange (ETDEWEB)

    None

    2001-02-01

    Software will Predict Corrosion Rates to Improve Productivity in the Chemical Industry. Many aspects of equipment design and operation are influenced by the choice of the alloys used to fabricate process equipment.

  6. First Everlasting Alloy

    Institute of Scientific and Technical Information of China (English)

    杨仲言

    1994-01-01

    There′s new alloy that apparently just won′t give up. When a pin was scraped along it the equivalent of one million times, the alloy-made of zirconium, palladium, and ruthenium—displayed no net loss of surface material. When astonished researchers at the National Institute of Standards and Technology(NIST) persevered with a five-million-cycle wear test, they got the same result.

  7. Machining of titanium alloys

    CERN Document Server

    2014-01-01

    This book presents a collection of examples illustrating the resent research advances in the machining of titanium alloys. These materials have excellent strength and fracture toughness as well as low density and good corrosion resistance; however, machinability is still poor due to their low thermal conductivity and high chemical reactivity with cutting tool materials. This book presents solutions to enhance machinability in titanium-based alloys and serves as a useful reference to professionals and researchers in aerospace, automotive and biomedical fields.

  8. Correlation between diffusion barriers and alloying energy in binary alloys

    DEFF Research Database (Denmark)

    Vej-Hansen, Ulrik Grønbjerg; Rossmeisl, Jan; Stephens, Ifan;

    2016-01-01

    In this paper, we explore the notion that a negative alloying energy may act as a descriptor for long term stability of Pt-alloys as cathode catalysts in low temperature fuel cells.......In this paper, we explore the notion that a negative alloying energy may act as a descriptor for long term stability of Pt-alloys as cathode catalysts in low temperature fuel cells....

  9. INVESTIGATION OF MAGNESIUM ALLOYS MACHINABILITY

    Directory of Open Access Journals (Sweden)

    Berat Barıs BULDUM

    2013-01-01

    Full Text Available Magnesium is the lightest structural metal. Magnesium alloys have a hexagonal lattice structure, which affects the fundamental properties of these alloys. Plastic deformation of the hexagonal lattice is more complicated than in cubic latticed metals like aluminum, copper and steel. Magnesium alloy developments have traditionally been driven by industry requirements for lightweight materials to operate under increasingly demanding conditions. Magnesium alloys have always been attractive to designers due to their low density, only two thirds that of aluminium and its alloys [1]. The element and its alloys take a big part of modern industry needs. Especially nowadays magnesium alloys are used in automotive and mechanical (trains and wagons manufacture, because of its lightness and other features. Magnesium and magnesium alloys are the easiest of all metals to machine, allowing machining operations at extremely high speed. All standard machining operations such as turning, drilling, milling, are commonly performed on magnesium parts.

  10. Selective dissolution in binary alloys

    Science.gov (United States)

    McCall, Carol Rene

    Corrosion is an important issue in the design of engineering alloys. De-alloying is an aspect of alloy corrosion related to the selective dissolution of one or more of the components in an alloy. The work reported herein focuses on the topic of de-alloying specific to single-phase binary noble metal alloy systems. The alloy systems investigated were gold-silver and gold-copper. The onset of a bulk selective dissolution process is typically marked by a critical potential whereby the more reactive component in the alloy begins dissolving from the bulk, leading to the formation of a bi-continuous solid-void morphology. The critical potential was investigated for the entire composition range of gold-silver alloys. The results presented herein include the formulation of an expression for critical potential as a function of both alloy and electrolyte composition. Results of the first investigation of underpotential deposition (UPD) on alloys are also presented herein. These results were implemented as an analytical tool to provide quantitative measurements of the surface evolution of gold during de-alloying. The region below the critical potential was investigated in terms of the compositional evolution of the alloy surface. Below the critical potential, there is a competition between the dissolution of the more reactive alloying constituent (either silver or copper) and surface diffusion of gold that serves to cover dissolution sites and prevent bulk dissolution. By holding the potential at a prescribed value below the critical potential, a time-dependent gold enrichment occurs on the alloy surface leading to passivation. A theoretical model was developed to predict the surface enrichment of gold based on the assumption of layer-by-layer dissolution of the more reactive alloy constituent. The UPD measurements were used to measure the time-dependent surface gold concentration and the results agreed with the predictions of the theoretical model.

  11. Structural thermodynamics of alloys

    CERN Document Server

    Manenc, Jack

    1973-01-01

    Technical progress has for a very long time been directly dependent on progress in metallurgy, which is itself connected with improvements in the technology of alloys. Metals are most frequently used in the form of alloys for several reasons: the quantity of pure metal in its native state in the earth's crust is very limited; pure metals must be extracted from ores which are themselves impure. Finally, the methods of treatment used lead more easily to alloys than to pure metals. The most typical case is that of iron, where a pure ore may be found, but which is the starting point for cast iron or steel, alloys of iron and carbon. In addition, the properties of alloys are in general superior to those of pure metals and modem metallurgy consists of controlling these properties so as to make them conform to the requirements of the design office. Whilst the engineer was formerly compelled to adapt his designs and constructions to the materials available, such as wood, stone, bronze, iron, cast iron and ordinary st...

  12. De-alloyed platinum nanoparticles

    Science.gov (United States)

    Strasser, Peter; Koh, Shirlaine; Mani, Prasanna; Ratndeep, Srivastava

    2011-08-09

    A method of producing de-alloyed nanoparticles. In an embodiment, the method comprises admixing metal precursors, freeze-drying, annealing, and de-alloying the nanoparticles in situ. Further, in an embodiment de-alloyed nanoparticle formed by the method, wherein the nanoparticle further comprises a core-shell arrangement. The nanoparticle is suitable for electrocatalytic processes and devices.

  13. Solution-based synthesis and design of late transition metal chalcogenide materials for oxygen reduction reaction (ORR).

    Science.gov (United States)

    Gao, Min-Rui; Jiang, Jun; Yu, Shu-Hong

    2012-01-09

    Late transition metal chalcogenide (LTMC) nanomaterials have been introduced as a promising Pt-free oxygen reduction reaction (ORR) electrocatalysts because of their low cost, good ORR activity, high methanol tolerance, and facile synthesis. Herein, an overview on the design and synthesis of LTMC nanomaterials by solution-based strategies is presented along with their ORR performances. Current solution-based synthetic approaches towards LTMC nanomaterials include a hydrothermal/solvothermal approach, single-source precursor approach, hot-injection approach, template-directed soft synthesis, and Kirkendall-effect-induced soft synthesis. Although the ORR activity and stability of LTMC nanomaterials are still far from what is needed for practical fuel-cell applications, much enhanced electrocatalytic performance can be expected. Recent advances have emphasized that decorating the surface of the LTMC nanostructures with other functional nanoparticles can lead to much better ORR catalytic activity. It is believed that new synthesis approaches to LTMCs, modification techniques of LTMCs, and LTMCs with desirable morphology, size, composition, and structures are expected to be developed in the future to satisfy the requirements of commercial fuel cells.

  14. Optical characterization of thermally evaporated thin films of As40S40Se20 chalcogenide glass by reflectance measurements

    Science.gov (United States)

    Márquez, E.; González-Leal, J. M.; Prieto-Alcón, R.; Vlcek, M.; Stronski, A.; Wagner, T.; Minkov, D.

    Optical reflection spectra, at normal incidence, of ternary chalcogenide thin films of chemical composition As40S40Se20, deposited by thermal evaporation, were obtained in the 400 nm to 2200 nm spectral region. The optical constants of this amorphous material were computed using an optical characterization method based mainly on the ideas of Minkov and Swanepoel of utilising the upper and lower envelopes of the spectrum, which allows us to obtain both the real and imaginary parts of the complex refractive index, and the film thickness. Thickness measurements made by a surface-profiling stylus have been carried out to cross-check the results obtained by the optical method. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The optical band gap has been determined from absorption coefficient data by Tauc's procedure. Finally, the photo-induced and thermally induced changes in the optical properties of a-As40S40Se20 thin films were also studied, using both transmission and reflection spectra.

  15. A Versatile Strategy for Shish-Kebab-like Multi-heterostructured Chalcogenides and Enhanced Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Hu, Jianqiang; Liu, Aili; Jin, Huile; Ma, Dekun; Yin, Dewu; Ling, Pengsheng; Wang, Shun; Lin, Zhiqun; Wang, Jichang

    2015-09-01

    A series of multi-heterostructured metal chalcogenides (CdS-Te, NiS/CdS-Te, and MoS2/CdS-Te) with a surprising shish-kebab-like structure have been synthesized via a one-step microwave-assisted pyrolysis of dithiocarbamate precursors in ethylene glycol. Subsequently, CdS-Te composites were exploited as a self-sacrificial template to craft various CdS-Te@(Pt, Pd) multi-heterostructures. Highly uniform dispersion and intimate interactions between CdS and multicomponent cocatalysts, together with improved separation of photogenerated carriers due to the presence of Te nanotubes (NTs) and trace CdTe, enable CdS-based heterostructured photocatalysts to exhibit greatly enhanced efficiency and stability in the photocatalytic production of H2. Thorough morphological characterizations revealed that the growth of metal sulfide/Te heterostructures originates from the growth of Te tubes, which is likely governed by diffusion-limited depletion of the Te precursor and the dissolution-crystallization process of Te seeds followed by the formation of metal sulfide kebabs.

  16. Size-controlled Intercalation to Conversion Transition in Lithiation of Transition-Metal Chalcogenides – NbSe3

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Langli; Zhao, Benliang; Xiang, Bin; Wang, Chong M.

    2016-01-23

    Transition metal chalcogenides (TMCs) can either be used as intercalation cathodes or as conversion type anodes for lithium ion batteries, for which two distinctively different lithiation reaction mechanisms govern the electrochemical performance of TMCs. However, it remains elusive that what controls the transition of lithiation mechanisms. Herein, we investigated the lithiation process of NbSe3 ribbons using in situ transmission electron microscopy (TEM) and observed a size dependent transition from intercalation to conversion reaction. The large NbSe3 ribbons can accommodate high concentration of Li+ through intercalation by relaxing its internal spacing, while lithiation of small NbSe3 ribbons proceeds readily to full conversion reaction. We find that the size dependent variation of lithiation mechanism is attributed to the Li+ diffusion in NbSe3 and the accommodation of newly formed phases, i.e., insufficient Li+ diffusion and limited space for accommodating the volume expansion induced by forming new phases in large size ribbons both impede the intercalation-to-conversion transition. These results demonstrate the inherent structural instability of NbSe3 as an intercalation cathode and fast lithiation rate as a promising conversion type anode.

  17. Solvothermal and ionothermal syntheses and structures of amine- and/or (poly-)chalcogenide coordinated metal complexes

    Energy Technology Data Exchange (ETDEWEB)

    Thiele, Guenther; Santner, Silke; Donsbach, Carsten; Assmann, Maik; Mueller, Marcus; Dehnen, Stefanie [Marburg Univ. (Germany). Fachbereich Chemie und Wissenschaftliches Zentrum fuer Materialwissenschaften

    2014-10-01

    A series of five compounds, namely [Ba(trien){sub 2}]{sub 3}[SbSe{sub 4}]{sub 2}.trien (1) (trien=diethylenetriamine), [(Se{sub 3})Cr(en){sub 2}(Se{sub 2})Cr(en){sub 2}(Se{sub 3})]{sub 2} (2) (en=ethylenediamine), [(pren){sub 3} Eu(Te{sub 3}){sub 2} Eu(pren){sub 3}] (3) (pren=1,3-diaminopropane), [(en){sub 4} Ba(pren)Ba(en){sub 4}](Te{sub 3}){sub 2} (4) and [enH]{sub 4}[Sn{sub 2} Se{sub 6}] (5), which illustrate the transition of classical polychalcogenides to metalates, are presented, where mixed amine/(poly-)chalcogenide interaction with metal centers are in the focus of interest. A conventional aminothermal synthesis is discussed in comparison with ionothermal approaches. The compounds are considered useful precursors to study in situ interconversion of selenido- and telluridometalates under ionothermal conditions.

  18. Size-Controlled Intercalation-to-Conversion Transition in Lithiation of Transition-Metal Chalcogenides-NbSe3.

    Science.gov (United States)

    Luo, Langli; Zhao, Benliang; Xiang, Bin; Wang, Chong-Min

    2016-01-26

    Transition-metal chalcogenides (TMCs) can be used either as intercalation cathodes or as conversion-type anodes for lithium ion batteries, for which two distinctively different lithiation reaction mechanisms govern the electrochemical performance of TMCs. However, the factors that control the transition of lithiation mechanisms remain elusive. In this work, we investigated the lithiation process of NbSe3 ribbons using in situ transmission electron microscopy and observed a size-dependent transition from intercalation to the conversion reaction. Large NbSe3 ribbons can accommodate high concentrations of Li(+) through intercalation by relaxing their internal spacing, while lithiation of small NbSe3 ribbons proceeds readily to full conversion. We found that the size-dependent variation of the lithiation mechanism is associated with both Li(+) diffusion in NbSe3 and the accommodation of newly formed phases. For large NbSe3 ribbons, the intercalation-to-conversion transition is impeded by both long-range Li(+) diffusion and large-scale accommodation of volume expansion induced by the formation of new phases. These results demonstrate the inherent structural instability of NbSe3 as an intercalation cathode and its high lithiation rate as a promising conversion-type anode.

  19. Neutron absorbing alloy

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Masayuki

    1998-12-04

    The neutron absorbing alloy of the present invention comprises Ti or an alloy thereof as a mother material, to which from 2 to 40% by weight of Hf and Gd within a range of from 4 to 50% by weight in total are added respectively. Ti is excellent in specific strength, corrosion resistance and workability, and produces no noxious intermetallic compound with Hf and Gd. In addition, since the alloy can incorporate a great quantity of Hf and Gd, a neutron absorbing material having excellent neutron absorbing performance than usual and excellent in specific strength, corrosion resistance and workability can be manufactured conveniently and economically not by a special manufacturing method. (T.M.)

  20. Shape Memory Alloys

    Directory of Open Access Journals (Sweden)

    Deexith Reddy

    2016-07-01

    Full Text Available Shape memory alloys (SMAs are metals that "remember" their original shapes. SMAs are useful for such things as actuators which are materials that "change shape, stiffness, position, natural frequency, and other mechanical characteristics in response to temperature or electromagnetic fields" The potential uses for SMAs especially as actuators have broadened the spectrum of many scientific fields. The study of the history and development of SMAs can provide an insight into a material involved in cutting-edge technology. The diverse applications for these metals have made them increasingly important and visible to the world. This paper presents the working of shape memory alloys , the phenomenon of super-elasticity and applications of these alloys.

  1. Double Glow Plasma Surface Alloyed Burn-resistant Titanium Alloy

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ping-ze; XU Zhong; HE Zhi-yong; ZHANG Gao-hui

    2004-01-01

    Conventional titanium alloy may be ignited and burnt under high temperature, high pressure and high gas flow velocity condition. In order to avoid this problem, we have developed a new kind of burn-resistant titanium alloy-double glow plasma surface alloying burn-resistant titanium alloy. Alloying element Cr, Mo, Cu are induced into the Ti-6Al-4V and Ti-6.5Al-0.3Mo-l.5Zr-0.25Si substrates according to double glow discharge phenomenon, Ti-Cr ,Ti-Mo, Ti-Cu binary burn-resistant alloy layers are formed on the surface of Ti-6Al-4V and Ti-6.5Al-0.3Mo-l.5Zr-0.25Si alloys. The depth of the surface burn-resistant alloy layer can reach to above 200 microns and alloying element concentration can reach 90%.Burn-resistant property experiments reveal that if Cr concentration reach to 14%, Cu concentration reach to 12%, Mo concentration reach to 10% in the alloying layers, ignition and burn of titanium alloy can be effectively avoided.

  2. Double Glow Plasma Surface Alloyed Burn-resistant Titanium Alloy

    Institute of Scientific and Technical Information of China (English)

    ZHANGPing-ze; XUZhong; HEZhi-yong; ZHANGGao-hui

    2004-01-01

    Conventional titanium alloy may be ignited and burnt under high temperature, high pressure and high gas flow velocity condition. In order to avoid this problem, we have developed a new kind of burn-resistant titanium alloy-double glow plasma surface alloying burn-resistant titanium alloy. Alloying element Cr, Mo, Cu are induced into the Ti-6A1-4V and Ti-6.5Al-0.3Mo-1.5Zr-0.25Si substrates according to double glow discharge phenomenon, Ti-Cr ,Ti-Mo, Ti-Cu binary burn-resistant alloy layers are formed on the surface of Ti-6A1-4V and Ti-6.5Al-0.3Mo-1.5Zr-0.25Si alloys. The depth of the surface burn-resistant alloy layer can reach to above 200 microns and alloying element concentration can reach 90%. Burn-resistant property experiments reveal that if Cr concentration reach to 14%, Cu concentration reach to 12%, Mo concentration reach to 10% in the alloying layers, ignition and burn of titanium alloy can be effectively avoided.

  3. Strip Casting of High Performance Structural Alloys

    Institute of Scientific and Technical Information of China (English)

    S S Park; J G Lee; Nack J Kim

    2004-01-01

    There exists a great need for the development of high performance alloys due to increasing demands for energy conservation and environmental protection. Application of strip casting shows a strong potential for the improvement of properties of existing alloys and also for the development of novel alloy systems with superior properties. The present paper reviews our Center's activities in the development of high performance alloys by strip casting. Examples include (1) Al alloys, (2) wrought Mg alloys, and (3) bulk metallic glass (BMG) alloys.

  4. Pemilihan Bahan Alloy Untuk Konstruksi Gigitiruan

    OpenAIRE

    Medila Dahlan

    2008-01-01

    Pada kedokteran gigi bahan alloy sangat banyak digunakan dalam segala bidang. Dalam pembuatan konstruksi gigitiman biasanya digunakan alloy emas, alloy kobalt kromium, alloy nikei kromium dan alloy stainless steel sebagai komponen gigitiman kerangka logam serta pembuatan mahkota dan jembatan. Pemilihan bahan alloy dapat dilakukan berdasarkan sifat yang dimiiiki oleh masing-masing bahan alloy sehingga akan didapat hasil konstmksi gigitiruan yang memuaskan. Pada pemakaiannya didaiam mulut...

  5. Tungsten Alloy Outgassing Measurements

    CERN Document Server

    Rutherfoord, John P; Shaver, L

    1999-01-01

    Tungsten alloys have not seen extensive use in liquid argon calorimeters so far. Because the manufacturing process for tungsten is different from the more common metals used in liquid argon there is concern that tungsten could poison the argon thereby creating difficulties for precision calorimetry. In this paper we report measurements of outgassing from the tungsten alloy slugs proposed for use in the ATLAS FCal module and estimate limits on potential poisoning with reasonable assumptions. This estimate gives an upper limit poisoning rate of

  6. Investigation of high tension chalcogenide glass micro-structure optical fibers%高强度硫系玻璃微结构光纤研究

    Institute of Scientific and Technical Information of China (English)

    何钰钜; 王训四; 聂秋华; 张培全; 徐会娟; 徐铁峰; 戴世勋; 张培晴

    2013-01-01

    Chalcogenide glass micro-structure optical fibers (CGMOFs) have wide potential applications in the field of infrared laser energy transmission and infrared optical fiber sensing for their unique optical properties. The problem is that there is no good method to prepare chalcogenide glass micro-structure optical fibers up to now. In this paper,we attempt to fabricate chalcogenide glass micro-structure optical fibers by using the press forming method. A glass extruder is designed to extrude Ge20 Sb15 Se65 chalcogenide glass into a multi-hole fiber preforms. Then,the extruder preform is drawn into fiber using an improved fiber drawing machine. The infrared transmitting property is measured by using infrared thermal imager and infrared spectrometer. The optical loss of extruded glass is calculated based on the infrared transmission spectra of glass disks with different thicknesses. We also measure fiber cross-section and its diameter by scanning electron microscope (SEM). The results show that the infrared transmission spectra of the extruded glass have not decreased obviously. The optical losses of the glasses before and after extruding at 10 μm are 0. 25 dB/cm and 0. 27 dB/cm. respectively. The strength of chalcogenide glass fiber protected by a thin layer of plastic polymer is 1.45 times of that of a standard silica fiber,promoting the development of chalcogenide glass micro-structure optical fibers.%针对硫系玻璃微结构光纤缺少有效制备方法的问题,本文选用可塑性较好的Ge20Sb15Se65硫系玻璃,利用自制的硫系玻璃挤压机制备了多孔硫系玻璃微结构光纤(CGMOF).利用红外热像仪以及傅里叶红外光谱仪测试了挤压前后玻璃的红外透过性能、根据不同厚度玻璃片的透过谱,计算了挤压后玻璃的光学损耗特性.利用扫描电子显微镜观察拉制光纤的横截面,测试了光纤的直径.分析结果表明,挤压后的硫系玻璃的红外透过率和损耗较挤压前没有显著

  7. Memory type switching behavior of ternary Ge20Te80-x Sn x (0  ⩽  x  ⩽  4) chalcogenide compounds

    Science.gov (United States)

    Jeevan Fernandes, Brian; Sridharan, Kishore; Munga, Pumlian; Ramesh, K.; Udayashankar, N. K.

    2016-07-01

    Chalcogenide compounds have gained huge research interest recently owing to their capability to transform from an amorphous to a crystalline phase with varying electrical properties. Such materials can be applied in building a new class of memories, such as phase-change memory and programmable metallization cells. Here we report the memory type electrical switching behavior of a ternary chalcogenide compound synthesized by doping Tin (Sn) in a germanium-telluride (Ge20Te80) host matrix, which yielded a composition of Ge20Te80-x Sn x (0  ⩽  x  ⩽  4). Results indicate a remarkable decrease in the threshold switching voltage (V T) from 140 to 61 V when the Sn concentration was increased stepwise, which is attributed to the domination of the metallicity factor leading to reduced amorphous network connectivity and rigidity. Variation in the threshold switching voltage (V T) was noticed even when the sample thickness and temperature were altered, confirming that the memory switching process is of thermal origin. Investigations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed the formation of a crystalline channel that acts as the conduction path between the two electrodes in the switched region. Structural and morphological studies indicated that Sn metal remained as a micro inclusion in the matrix and hardly contributed to the rigid amorphous network formation in Ge20Te80-x Sn x . Memory type electrical switching observed in these ternary chalcogenide compounds synthesized herein can be explored further for the fabrication of phase-change memory devices.

  8. Alloy catalyst material

    DEFF Research Database (Denmark)

    2014-01-01

    The present invention relates to a novel alloy catalyst material for use in the synthesis of hydrogen peroxide from oxygen and hydrogen, or from oxygen and water. The present invention also relates to a cathode and an electrochemical cell comprising the novel catalyst material, and the process use...

  9. Shape Memory Alloy Actuator

    Science.gov (United States)

    Baumbick, Robert J. (Inventor)

    2002-01-01

    The present invention discloses and teaches a unique, remote optically controlled micro actuator particularly suitable for aerospace vehicle applications wherein hot gas, or in the alternative optical energy, is employed as the medium by which shape memory alloy elements are activated. In gas turbine powered aircraft the source of the hot gas may be the turbine engine compressor or turbine sections.

  10. Pareto-optimal alloys

    DEFF Research Database (Denmark)

    Bligaard, Thomas; Johannesson, Gisli Holmar; Ruban, Andrei;

    2003-01-01

    and the cost. In this letter we present a database consisting of the lattice parameters, bulk moduli, and heats of formation for over 64 000 ordered metallic alloys, which has been established by direct first-principles density-functional-theory calculations. Furthermore, we use a concept from economic theory...

  11. Magnesium-induced copper-catalyzed synthesis of unsymmetrical diaryl chalcogenide compounds from aryl iodide via cleavage of the Se-Se or S-S bond.

    Science.gov (United States)

    Taniguchi, Nobukazu; Onami, Tetsuo

    2004-02-06

    The methodology for a copper-catalyzed preparation of diaryl chalcogenide compounds from aryl iodides and diphenyl dichalcogenide molecules is reported. Unsymmetrical diaryl sulfide or diaryl selenide can be synthesized from aryl iodide and PhYYPh (Y = S, Se) with a copper catalyst (CuI or Cu(2)O) and magnesium metal in one pot. This reaction can be carried out under neutral conditions according to an addition of magnesium metal as the reductive reagent. Furthermore, it is efficiently available for two monophenylchalcogenide groups generated from diphenyl dichalcogenide.

  12. Mid-infrared supercontinuum generation in chalcogenide step-index fibers pumped at 2.9 and 4.5µm

    OpenAIRE

    Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech; SEDDON, Angela; Tang, Zhuoqi; Sujecki, Slawomir; Benson, Trevor M.; Furniss, David; Lamrini, Samir; Scholle, Karsten; Fuhrberg, Peter; Napier, Bruce; Farries, Mark; Ward, Jon; Moselund, Peter M.

    2014-01-01

    The Mid-InfraRed (MIR) spectral range (2-12µm) contains the spectral fingerprint of many organic molecules, which can be probed nondestructively for e.g. detection of skin cancer. For this SuperContinuum (SC) laser sources are good candidates since they can have broadband bandwidths together with high spectral densities. Here we consider a MIR SC laser sources based on chalcogenide step-index fibers with exceptionally high numerical aperture of ~1 pumped either with Er:ZBLAN and Pr:CHALC fibe...

  13. Pressure induced structural phase transition of PrX, PrY (X = S, Se, Te) chalcogenides and (Y = N, P, As) pnictides

    Science.gov (United States)

    Varshney, Dinesh; Shriya, Swarna; Dube, A.; Varshney, Meenu

    2012-06-01

    Pressure induced structural aspects of NaCl-type (B1) to CsCl-type (B2) structure in Praseodymium pnictides and chalcogenides are presented. An effective interionic interaction potential with long range Coulomb, van der Waals interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge is developed. Deduced results on volume discontinuity in pressure volume phase diagram identify the structural phase transition from B1 to B2 structure consistent with the known results.

  14. Mercury's Crater-Hosted Hollows: Chalcogenide Pryo-Thermokarst, and Permafrost Analogs on Earth, Mars, and Titan

    Science.gov (United States)

    Kargel, Jeffrey

    2013-04-01

    MESSENGER has acquired stunning images of pitted, light-toned and variegated light/dark terrains located primarily on the floors—probably impact-melt sheets—of many of Mercury's large craters. Termed "hollows", the pitted terrains are geomorphologically similar to some on Mars formed by sublimation of ice-rich permafrost and to lowland thermokarst on Earth formed by permafrost thaw; to "swiss cheese" terrain forming by sublimation of frozen CO2 at the Martian South Pole; and to suspected hydrocarbon thermokarst at Titan's poles. I shall briefly review some analogs on these other worlds. The most plausible explanation for Mercury's hollows is terrain degradation involving melting or sublimation of heterogeneous chalcogenide and sulfosalt mineral assemblages. I refer to these Mercurian features as pyrothermokarst; the etymological redundancy distinguishes the conditions and mineral agents from the ice-related features on Earth and Mars, though some of the physical processes may be similar. Whereas ice and sulfur have long been suspected and ice recently was discovered in permanently shadowed craters of Mercury's polar regions, the hollows occur down to the equator, where neither ice nor sulfur is plausible. The responsible volatiles must be only slightly volatile on the surface and/or in the upper crust of Mercury's low to middle latitudes at 400-800 K, but they must be capable of either melting or sublimating on geologically long time scales. Under prevailing upper crustal and surface temperatures, chalcophile-rich "permafrost" can undergo either desulfidation or melting reactions that could cause migration or volume changes of the permafrost, and hence lead to collapse and pitting. I propose the initial emplacement of crater-hosted chalcogenides, sulfosalts and related chalcophile materials such as pnictides, in impact-melt pools (involving solid-liquid and silicate-sulfide fractionation) and further differentiation by associated dry or humid fumaroles (solid

  15. Investigation of Kinetics of crystallization Processes of S15-Se85, S15-Se81-Cu4 Chalcogenide glasses

    Science.gov (United States)

    Samudrala, Kavitha; Babu Devarasetty, Suresh

    2016-09-01

    In the present work, S15-Se85, S15-Se81-Cu4 chalcogenide glasses are prepared by using conventional melt quenching technique. The as-prepared samples are studied by experimental techniques like X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC). XRD studies have confirmed that the as-prepared samples are amorphous in nature. It is clear from DSC studies that the as-prepared samples are glassy in nature. Kinetic analysis of the crystallization process of as-prepared glasses is carried using DSC curves. Activation energy for glass transition and Activation energy for crystallization are determined using Kissinger method. Activation energy for glass transition of S15-Se85 and S15-Se81-Cu4 glasses is found to be 84.5076 and 275.801 KJ/Mole respectively. Activation energy for crystallization of S15-Se85 glass is found to be 106.2622 KJ/Mole for 1st peak while Activation energy for crystallization of S15-Se81-Cu4 glasses is found to be 97.93 KJ/Mole for 1st peak and 84.20 KJ/Mole for 2nd peak. Kauzmann temperature (Tk) is determined from the heating rate dependent glass transition and crystallization temperatures. Tk value for S15-Se85 glass sample is 236.680K (1st peak) and for S15-Se81-Cu4 is 283.530K (1st peak) and 286.330K (2n peak). Avrami Index (n) is also determined for as-prepared glasses. Avrami Index (n) value for S15-Se85 glass sample is 1.8 (1st peak) and for S15-Se81-Cu4 is 2.9 (1st peak) and 1.4 (2nd peak). The crystalline phases by thermal treatment of as-prepared glasses are identified using XRD patterns.

  16. Thermoelectric properties of chalcogenide based Cu2+xZnSn1−xSe4

    Directory of Open Access Journals (Sweden)

    Ch. Raju

    2013-03-01

    Full Text Available Quaternary chalcogenide compounds Cu2+xZnSn1−xSe4 (0 ≤ x ≤ 0.15 were prepared by solid state synthesis. Rietveld powder X-ray diffraction (XRD refinements combined with Electron Probe Micro Analyses (EPMA, WDS-Wavelength Dispersive Spectroscopy and Raman spectra of all samples confirmed the stannite structure (Cu2FeSnS4-type as the main phase. In addition to the main phase, small amounts of secondary phases like ZnSe, CuSe and SnSe were observed. Transport properties of all samples were measured as a function of temperature in the range from 300 K to 720 K. The electrical resistivity of all samples decreases with an increase in Cu content except for Cu2.1ZnSn0.9Se4, most likely due to a higher content of the ZnSe. All samples showed positive Seebeck coefficients indicating that holes are the majority charge carriers. The thermal conductivity of doped samples was high compared to Cu2ZnSnSe4 and this may be due to the larger electronic contribution and the presence of the ZnSe phase in the doped samples. The maximum zT = 0.3 at 720 K occurs for Cu2.05ZnSn0.95Se4 for which a high-pressure torsion treatment resulted in an enhancement of zT by 30% at 625 K.

  17. Optical properties change in laser-induced Te/As{sub 2}Se{sub 3} chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Behera, Mukta; Naik, Ramakanta [Utkal University, Department of Physics, Bhubaneswar (India)

    2016-10-15

    In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As{sub 2}Se{sub 3} film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As{sub 2}Se{sub 3} bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As{sub 2}Se{sub 3} matrix was done by 532-nm laser irradiation. The structure of the As{sub 2}Se{sub 3}, as-prepared and irradiated Te/As{sub 2}Se{sub 3} films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As{sub 2}Se{sub 3} film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices. (orig.)

  18. Advanced ordered intermetallic alloy deployment

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.T.; Maziasz, P.J.; Easton, D.S. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The need for high-strength, high-temperature, and light-weight materials for structural applications has generated a great deal of interest in ordered intermetallic alloys, particularly in {gamma}-based titanium aluminides {gamma}-based TiAl alloys offer an attractive mix of low density ({approximately}4g/cm{sup 3}), good creep resistance, and high-temperature strength and oxidation resistance. For rotating or high-speed components. TiAl also has a high damping coefficient which minimizes vibrations and noise. These alloys generally contain two phases. {alpha}{sub 2} (DO{sub 19} structure) and {gamma} (L 1{sub 0}), at temperatures below 1120{degrees}C, the euticoid temperature. The mechanical properties of TiAl-based alloys are sensitive to both alloy compositions and microstructure. Depending on heat-treatment and thermomechanical processing, microstructures with near equiaxed {gamma}, a duplex structure (a mix of the {gamma} and {alpha}{sub 2} phases) can be developed in TiAl alloys containing 45 to 50 at. % Al. The major concern for structural use of TiAl alloys is their low ductility and poor fracture resistance at ambient temperatures. The purpose of this project is to improve the fracture toughness of TiAl-based alloys by controlling alloy composition, microstructure and thermomechanical treatment. This work is expected to lead to the development of TiAl alloys with significantly improved fracture toughness and tensile ductility for structural use.

  19. Tungsten carbide laser alloying of a low alloyed steel

    Science.gov (United States)

    Cojocaru, Mihai; Taca, Mihaela

    1996-10-01

    Laser alloying is a way to change the composition of metal surfaces in order to improve their corrosion-resistance, high-temperature strength and hardness. The results of a structural and phase analysis of a tungsten carbide based surface layer prepared by laser alloying of a low carbon steel substrate are presented. Structure, phase composition and microhardness of surface alloyed layers have been investigated. The surface of the samples exhibited a thin layer with a different chemical and phase composition. An increase in alloyed surface hardness and wear-resistance was observed.

  20. Filler metal alloy for welding cast nickel aluminide alloys

    Science.gov (United States)

    Santella, M.L.; Sikka, V.K.

    1998-03-10

    A filler metal alloy used as a filler for welding cast nickel aluminide alloys contains from about 15 to about 17 wt. % chromium, from about 4 to about 5 wt. % aluminum, equal to or less than about 1.5 wt. % molybdenum, from about 1 to about 4.5 wt. % zirconium, equal to or less than about 0.01 wt. % yttrium, equal to or less than about 0.01 wt. % boron and the balance nickel. The filler metal alloy is made by melting and casting techniques such as are melting the components of the filler metal alloy and cast in copper chill molds. 3 figs.

  1. Filler metal alloy for welding cast nickel aluminide alloys

    Energy Technology Data Exchange (ETDEWEB)

    Santella, Michael L. (Knoxville, TN); Sikka, Vinod K. (Oak Ridge, TN)

    1998-01-01

    A filler metal alloy used as a filler for welding east nickel aluminide alloys contains from about 15 to about 17 wt. % chromium, from about 4 to about 5 wt. % aluminum, equal to or less than about 1.5 wt. % molybdenum, from about 1 to about 4.5 wt. % zirconium, equal to or less than about 0.01 wt. % yttrium, equal to or less than about 0.01 wt. % boron and the balance nickel. The filler metal alloy is made by melting and casting techniques such as are melting the components of the filler metal alloy and east in copper chill molds.

  2. Materials data handbook, Inconel alloy 718

    Science.gov (United States)

    Sessler, J.; Weiss, V.

    1967-01-01

    Materials data handbook on Inconel alloy 718 includes data on the properties of the alloy at cryogenic, ambient, and elevated temperatures and other pertinent engineering information required for the design and fabrication of components and equipment utilizing this alloy.

  3. SINTERED REFRACTORY TUNGSTEN ALLOYS. Gesinterte hochschmelzende wolframlegierungen

    Energy Technology Data Exchange (ETDEWEB)

    Kieffer, R.; Sedlatschek, K.; Braun, H.

    1971-12-15

    Dependence of the melting point of the refractory metals on their positions in the periodic system - alloys of tungsten with other refractory metals - sintering of the alloys - processing of the alloys - technological properties.

  4. High-temperature Titanium Alloys

    Directory of Open Access Journals (Sweden)

    A.K. Gogia

    2005-04-01

    Full Text Available The development of high-temperature titanium alloys has contributed significantly to the spectacular progress in thrust-to-weight ratio of the aero gas turbines. This paper presents anoverview on the development of high-temperature titanium alloys used in aero engines and potential futuristic materials based on titanium aluminides and composites. The role of alloychemistry, processing, and microstructure, in determining the mechanical properties of titanium alloys is discussed. While phase equilibria and microstructural stability consideration haverestricted the use of conventional titanium alloys up to about 600 "C, alloys based on TiPl (or,, E,AINb (0, TiAl (y, and titaniumltitanium aluminides-based composites offer a possibility ofquantum jump in the temperature capability of titanium alloys.

  5. Structural features of spin-coated thin films of binary As{sub x}S{sub 100−x} chalcogenide glass system

    Energy Technology Data Exchange (ETDEWEB)

    Cook, J. [Austin Peay State University, Clarksville, TN 37075 (United States); Slang, S. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Golovchak, R. [Austin Peay State University, Clarksville, TN 37075 (United States); Jain, H. [International Materials Institute for New Functionality in Glass, Lehigh University, Bethlehem, PA 18015 (United States); Vlcek, M. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Kovalskiy, A., E-mail: kovalskyya@apsu.edu [Austin Peay State University, Clarksville, TN 37075 (United States)

    2015-08-31

    Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As{sub x}S{sub 100−x} (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As{sub 2}O{sub 3} was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films.

  6. Mid-infrared supercontinuum generation to 12.5μm in large NA chalcogenide step-index fibres pumped at 4.5μm

    DEFF Research Database (Denmark)

    Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech;

    2014-01-01

    We present numerical modeling of mid-infrared (MIR) supercontinuum generation (SCG) in dispersion-optimized chalcogenide (CHALC) step-index fibres (SIFs) with exceptionally high numerical aperture (NA) around one, pumped with mode-locked praseodymium-doped (Pr3+) chalcogenide fibre lasers. The 4.......5um laser is assumed to have a repetition rate of 4MHz with 50ps long pulses having a peak power of 4.7kW. A thorough fibre design optimisation was conducted using measured material dispersion (As-Se/Ge-As-Se) and measured fibre loss obtained in fabricated fibre of the same materials. The loss...... was below 2.5dB/m in the 3.3-9.4μ m region. Fibres with 8 and 10μm core diameters generated an SC out to 12.5 and 10.7μm in less than 2m of fibre when pumped with 0.75 and 1kW, respectively. Larger core fibres with 20μm core diameters for potential higher power handling generated an SC out to 10.6μm...

  7. Engel-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4

    Science.gov (United States)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2016-01-01

    Metal chalcogenide semiconductors have a significant role in the development of materials for energy and nanotechnology applications. First principle calculations were applied on CsAgGa2Se4 to investigate its optoelectronic structure and bonding characteristics, using the full-potential linear augmented plane wave method within the framework of generalized gradient approximations (GGA) and Engel-Vosko GGA functionals (EV-GGA). The band structure from EV-GGA shows that the valence band maximum and conduction band minimum are situated at Γ with a band gap value of 2.15 eV. A mixture of orbitals from Ag 4 p 6/4 d 10, Se 3 d 10, Ga 4 p 1, Se 4 p 4 , and Ga 4 s 2 states have a primary role to lead to a semiconducting character of the present chalcogenide. The charge density iso-surface shows a strong covalent bonding between Ag-Se and Ga-Se atoms. The imaginary part of dielectric constant reveals that the threshold (first optical critical point) energy of dielectric function occurs 2.15 eV. It is obvious that with a direct large band gap and large absorption coefficient, CsAgGa2Se4 might be considered a potential material for photovoltaic applications.

  8. A New Design of As2Se3‎ Chalcogenide Glass Photonic Crystal Fiber with Ultra-Flattened Dispersion in Mid-Infrared Wavelength Range

    Directory of Open Access Journals (Sweden)

    Mahmood Seifouri

    2014-12-01

    Full Text Available In this paper, we report a new design of As2Se3‎ chalcogenide glass photonic crystal fiber (PCF with ultra-flattened dispersion at mid-infrared wavelength range. We have used the plane wave expansion method (PWE for designing the structure of As2Se3‎ glass PCF at different wavelength windows. In the proposed structure with hole to hole spacing and , the negative dispersion is -1025 ps/nm/km at the wavelength of 1.55µm, and also an ultra-flattened dispersion is achieved at the wavelength range of 3.5-18μm. Hence such PCFs have a high potential to be used as dispersion compensating fibers at 1.55µm wavelength in optical communication systems. The ultra-flattened dispersion at the wavelength range of 3.5-18μm can be employed to achieve high power super-continuum generation. The nonlinear coefficient of the proposed PCF is 1.5 W-1m-1 at the wavelength of 1.55µm. Chalcogenide glasses are known to have both high transparency and nonlinearity in a wide range of infrared wavelengths compared to silica glasses.

  9. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50) for Phase Change Memory

    Institute of Scientific and Technical Information of China (English)

    LAI Yun-Feng; FENG Jie; QIAO Bao-Wei; HUANG Xiao-Gang; CAI Yan-Fei; LIN Yin-Yin; TANG Ting-Ao; CAI Bing-Chu; CHEN Bomy

    2006-01-01

    @@ The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure.

  10. Multicomponent and High Entropy Alloys

    Directory of Open Access Journals (Sweden)

    Brian Cantor

    2014-08-01

    Full Text Available This paper describes some underlying principles of multicomponent and high entropy alloys, and gives some examples of these materials. Different types of multicomponent alloy and different methods of accessing multicomponent phase space are discussed. The alloys were manufactured by conventional and high speed solidification techniques, and their macroscopic, microscopic and nanoscale structures were studied by optical, X-ray and electron microscope methods. They exhibit a variety of amorphous, quasicrystalline, dendritic and eutectic structures.

  11. Porosity of porous Al alloys

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Two porosity models of porous Al alloys with different pore types (ball and polygon shape) were established. The experimental results coincide well with theoretical computations. The porosity of Al alloys (Prc) consists of three parts, porosity caused by preform particles (Prp), additional porosity (Pra), and porosity caused by solidification shrinkage (Prs). Prp is the main part of Prc while Pra is the key for fabricating porous Al alloys successfully in spite of its little contribution to Prc.

  12. A fast simulator for polycrystalline processes with application to phase change alloys

    CERN Document Server

    Ashwin, Peter; Wright, C David

    2007-01-01

    We present a stochastic simulator for polycrystalline phase-change materials capable of spatio-temporal modelling of complex anneals. This is based on consideration of bulk and surface energies to generate rates of growth and decay of crystallites built up of `monomers' that themselves may be quite complex molecules. We perform a number of simulations of this model using a Gillespie algorithm. The simulations are performed at molecular scale and using an approximation of local free energy changes that depend only on immediate neighbours. The sites are on a lattice that neither correspond to the crystal lattice nor to individual monomers, but instead gives information about a two-state local phase $r$ (where $r=0$ corresponds to amorphous and 1 corresponds to crystalline) and a continuous crystal orientation $\\phi$ at each site. As an example we use this to model crystallisation in chalcogenide GST ($GeSbTe$) alloys used for example in phase-change memory devices, where reversible changes between amorphous and...

  13. Duct and cladding alloy

    Science.gov (United States)

    Korenko, Michael K.

    1983-01-01

    An austenitic alloy having good thermal stability and resistance to sodium corrosion at 700.degree. C. consists essentially of 35-45% nickel 7.5-14% chromium 0.8-3.2% molybdenum 0.3-1.0% silicon 0.2-1.0% manganese 0-0.1% zirconium 2.0-3.5% titanium 1.0-2.0% aluminum 0.02-0.1% carbon 0-0.01% boron and the balance iron.

  14. Analysis of laser alloyed surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Jacobson, D.C.; Augustyniak, W.M.; Buene, L.; Draper, C.W.; Poate, J.M.

    1981-04-01

    Surface alloys of precious metals have many advantages over bulk alloys, the most obvious of which is cost reduction due to the reduced consumption of precious metal. There are several techniques for producing surface alloys. In this paper the laser irradiation technique is presented. The following lasers: CW CO/sub 2/, Q-switched Nd-YAG, frequency double Q-switched Nd-YAG, and pulsed ruby were used to irradiate and melt thin solid films of precious metals on metal substrates. This causes the surfaces to melt to a depth of approximately 10,000A. Alloying then takes place in the liquid phase where most metals are miscible. The high quench rates obtainable by this method of melting can result in the forming of metastable alloys. This melting and regrowth process is well understood and has been discussed in the literature over the last few years. This paper deals with two binary alloy systems, Au-Ni and Pd-Ti. Surface alloys of Au-Ni with a wide range of concentrations have been produced by laser irradiation of thin Au films on Ni. These films have been analyzed using Rutherford backscattering (RBS) and channeling. Many thin film metals other than Au have also been successfully alloyed using these methods. An example of a potential application is the laser surface alloying of Pd to Ti for corrosion passivation.

  15. Oligocrystalline shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ueland, Stian M.; Chen, Ying; Schuh, Christopher A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

    2012-05-23

    Copper-based shape memory alloys (SMAs) exhibit excellent shape memory properties in single crystalline form. However, when they are polycrystalline, their shape memory properties are severely compromised by brittle fracture arising from transformation strain incompatibility at grain boundaries and triple junctions. Oligocrystalline shape memory alloys (oSMAs) are microstructurally designed SMA structures in which the total surface area exceeds the total grain boundary area, and triple junctions can even be completely absent. Here it is shown how an oligocrystalline structure provides a means of achieving single crystal-like SMA properties without being limited by constraints of single crystal processing. Additionally, the formation of oSMAs typically involves the reduction of the size scale of specimens, and sample size effects begin to emerge. Recent findings on a size effect on the martensitic transformation in oSMAs are compared and a new regime of heat transfer associated with the transformation heat evolution in these alloys is discussed. New results on unassisted two-way shape memory and the effect of loading rate in oSMAs are also reported. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Aluminum alloy impact sparkling

    Directory of Open Access Journals (Sweden)

    M. Dudyk

    2008-08-01

    Full Text Available The cast machine parts are widely used in many branches of industry. A very important issue is gaining the appropriate knowledge relating to the application of castings in places of explosion risks including but not limited to mining, chemical industry and rescue works. A possibility of explosion risks occurrence following the impact sparkling of the cast metal parts is still not solved problem in scientific research. In relation to this issue, in this article, the results of the study are presented, and relating to the tendency to impact sparkling of the aluminium alloys used in machine building. On the grounds of the results obtained, it was demonstrated that the registered impact sparkles bunches of feathers from the analyzed alloys: AlSi7Mg, (AK7; AlSi9Mg, (AK9; AlSi6Cu4, (AK64 and AlSi11, (AK11 show significant differences between each other. The quantitative analysis of the temperature distribution and nuclei surface area performed on the example of the alloy AK9 (subjected to defined period of corrosion allows for the statement that they are dangerous in conditions of explosion risk. Following this fact, designers and users of machine parts made from these materials should not use them in conditions where the explosive mixtures occur.

  17. Radiation Effects in Refractory Alloys

    Science.gov (United States)

    Zinkle, Steven J.; Wiffen, F. W.

    2004-02-01

    In order to achieve the required low reactor mass per unit electrical power for space reactors, refractory alloys are essential due to their high operating temperature capability that in turn enables high thermal conversion efficiencies. One of the key issues associated with refractory alloys is their performance in a neutron irradiation environment. The available radiation effects data are reviewed for alloys based on Mo, W, Re, Nb and Ta. The largest database is associated with Mo alloys, whereas Re, W and Ta alloys have the least available information. Particular attention is focused on Nb-1Zr, which is a proposed cladding and structural material for the reactor in the Jupiter Icy Moons Orbiter (JIMO) project. All of the refractory alloys exhibit qualitatively similar temperature-dependent behavior. At low temperatures up to ~0.3TM, where TM is the melting temperature, the dominant effect of radiation is to produce pronounced radiation hardening and concomitant loss of ductility. The radiation hardening also causes a dramatic decrease in the fracture toughness of the refractory alloys. These low temperature radiation effects occur at relatively low damage levels of ~0.1 displacement per atom, dpa (~2×1024 n/m2, E>0.1 MeV). As a consequence, operation at low temperatures in the presence of neutron irradiation must be avoided for all refractory alloys. At intermediate temperatures (0.3 to 0.6 TM), void swelling and irradiation creep are the dominant effects of irradiation. The amount of volumetric swelling associated with void formation in refractory alloys is generally within engineering design limits (>10 dpa). Very little experimental data exist on irradiation creep of refractory alloys, but data for other body centered cubic alloys suggest that the irradiation creep will produce negligible deformation for near-term space reactor applications.

  18. Properties of laser alloyed surface layers on magnesium base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Galun, R.; Weisheit, A.; Mordike, B.L. (Technische Univ. Clausthal, Clausthal-Zellerfeld (Germany). Inst. fuer Werkstoffkunde und Werkstofftechnik)

    1998-01-01

    The investigations have shown that laser surface alloying is a promising process to improve the wear and corrosion properties of magnesium base alloys without affecting the initial bulk properties like the low density. With an alloying element combination of aluminium and nickel the wear rate in the scratch test was reduced by 90% compared to untreated pure magnesium. Additionally the corrosion resistance was improved by laser alloying with this element combination. Because of distortion or crack formation in the case of large area treatments, the laser alloying should be limited to the treatment of smaller areas. In the near future this process could be an interesting alternative to surface coating or to a partially reinforcement with ceramic fibres or particles. (orig.)

  19. Investigation of electronic structure and thermodynamic properties of quaternary Li-containing chalcogenide diamond-like semiconductors

    Science.gov (United States)

    Berarma, K.; Charifi, Z.; Soyalp, F.; Baaziz, H.; Uğur, G.; Uğur, Ş.

    2016-12-01

    Using first-principles calculations based on density functional theory, the structural, electronic and thermodynamic properties of Li2CdGeS4 and Li2CdSnS4 compounds are investigated. We confirmed that both Li2CdGeS4 and Li2CdSnS4 are diamond-like semiconductors of the wurtz-stannite structure type based on that of diamond in terms of tetrahedra volume. All the tetrahedra are almost regular with major distortion from the ideal occurring in the LiS4 tetrahedron, with values for S-Li-S ranging from 105.69° to 112.84° in the Li2CdGeS4 compound. Furthermore, the Cd-S bond possesses a stronger covalent bonding strength than the Li/Ge-S bonds. In addition, the inter-distances in Li2CdSnS4 show a larger spread than the distances in the Li2CdGeS4 compound. The electronic structures have been calculated to understand the bonding mechanism in quaternary Li-containing chalcogenide diamond-like semiconductors. Our results show that Li2CdGeS4 and Li2CdSnS4 are semiconductors with a direct band gap of 2.79 and 2.42 eV and exhibit mixed ionic-covalent bonding. It is also noted that replacing Ge by Sn leads to a decrease in the band gap; this behavior is explained in terms of bond lengths and electronegativity differences between atoms. Optical properties, including the dielectric function, reflectivity, and absorption coefficient, each as a function of photon energy are calculated and show an optical anisotropy for Li2CdGeS4 and Li2CdSnS4. The static dielectric constant {\\varepsilon }1(0) and static refractive index n(0) decrease when Ge is replaced by Sn. The influence of pressures and temperatures on the thermodynamic properties like the specific heat at constant volume {C}v, and at constant pressure {C}p, the Debye temperature {{{\\Theta }}}{{D}}, the entropy S and the Grüneisen parameter γ have been predicted at enlarged pressure and temperature ranges. The principal aspect from the obtained results is the close similarity of both compounds.

  20. Electron Theory in Alloy Design

    CERN Document Server

    Pettifor, DG

    1992-01-01

    Presents recent developments in electron theory which have impacted upon the search for novel alloys with improved mechanical or magnetic properties. The ten chapters outline the ability of electron theory to make quantitative predictions (such as heats of formation, planar fault energies, shear moduli and magnetic anisotropy), and to provide simplifying concepts for understanding trends in alloy behaviour.

  1. Shape memory alloy thaw sensors

    Science.gov (United States)

    Shahinpoor, Mohsen; Martinez, David R.

    1998-01-01

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the Austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states.

  2. Two new ternary lanthanide antimony chalcogenides: Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.68} containing chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anions

    Energy Technology Data Exchange (ETDEWEB)

    Babo, Jean-Marie [Department of Civil Engineering and Geological Sciences and Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556 (United States); Albrecht-Schmitt, Thomas E., E-mail: talbrec1@nd.edu [Department of Civil Engineering and Geological Sciences and Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556 (United States)

    2012-03-15

    Dark red and dark brown crystals of Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 8}Sb{sub 4}Se{sub 11.68}, respectively, were obtained from the reaction of the elements in Sb{sub 2}Q{sub 3} (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.75,} respectively. - Graphical Abstract: The crystal structure of Yb{sub 4}Sb{sub 2}S{sub 11} viewed along the [0 1 0]. Highlights: Black-Right-Pointing-Pointer Lanthanide chalcogenides. Black-Right-Pointing-Pointer Semiconductors. Black-Right-Pointing-Pointer Tunnel structures. Black-Right-Pointing-Pointer Lone-pair effects.

  3. Mo-Si alloy development

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.T.; Heatherly, L.; Wright, J.L. [Oak Ridge National Lab., TN (United States)

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  4. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    Science.gov (United States)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  5. Wedlable nickel aluminide alloy

    Energy Technology Data Exchange (ETDEWEB)

    Santella, Michael L. (Knoxville, TN); Sikka, Vinod K. (Oak Ridge, TN)

    2002-11-19

    A Ni.sub.3 Al alloy with improved weldability is described. It contains about 6-12 wt % Al, about 6-12 wt % Cr, about 0-3 wt % Mo, about 1.5-6 wt % Zr, about 0-0.02 wt % B and at least one of about 0-0.15 wt % C, about 0-0.20 wt % Si, about 0-0.01 wt % S and about 0-0.30 wt % Fe with the balance being Ni.

  6. Galvanic cells including cobalt-chromium alloys.

    Science.gov (United States)

    Gjerdet, N R

    1980-01-01

    Galvanic cells may be created when dentures made of cobalt-chromium alloys are placed on teeth with metallic restorations. The power of such cells was evaluated in an in vitro galvanic using amalgams, gold alloy, and nickel-chromium alloys. The amalgams and one of the nickel-chromium alloys revealed high corrosion currents when placed in contact with cobalt-chromium alloy, the conventional amalgam showing the highest values. The gold alloy and another nickel-chromium alloy exhibited low corrosion currents and they were noble with respect to cobalt-chromium.

  7. [Prosthetic dental alloys. 1].

    Science.gov (United States)

    Quintero Engelmbright, M A

    1990-11-01

    A wide variety of restoration materials for prosthetic odontology is now available to the dental surgeon, either of the covalent type (acrylic resins), metallic (alloys), ionic (porcelains), or a combination of them, as in the so-called composites, such as the composite resins, or as ceramics-metals mixtures. An example of the latter is a product called Miracle-Mix, a glass ionomere cement reinforced with an amalgam alloy. In those cases where the blend is done by a synterization process, the material is called Cermet. The above-listed alternatives clearly evidence day-to-day advances in odontology, with researchers and manufacturers engaged the world over in improving existing products or developing new ones to enrich the dentist's armamentarium. As a side effect of this constant renewal, those dentists who have failed to update their knowledge fall behind in their practice as they persist in using products they have known for years, and may be deceived by advertisements of too-often unreliable products. It is, therefore, important to be aware of available products and their latest improvements.

  8. [Prosthetic dental alloys (2)].

    Science.gov (United States)

    Quintero Englembright, M A

    1990-12-01

    A wide variety of restoration materials for prosthetic odontology is now available to the dental surgeon, either of the covalent type (acrylic resins), metallic (alloys), ionic (porcelains), or a combination of them, as in the so-called composites, such as the composite resins, or as ceramics-metals mixtures. An example of the latter is a product called Miracle-Mix, a glass ionomere cement reinforced with an amalgam alloy. In those cases where the blend is done by a synterization process, the material is called Cermet. The above-listed alternatives clearly evidence day-to-day advances in odontology, with researchers and manufacturers engaged the world over in improving existing products or developing new ones to enrich the dentist's armamentarium. As a side effect of this constant renewal, those dentists who have failed to update their knowledge fall behind in their practice as they persist in using products they have known for years, and may be deceived by advertisements of too-often unreliable products. It is, therefore, important to be aware of available products and their latest improvements.

  9. Density of Liquid Ni-Cr Alloy

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The density of liquid Ni-Cr alloy was measured by a modified sessile drop method. The density of liquid Ni-Cr alloywas found to decrease with increasing temperature and Cr concentration in the alloy. The molar volume of liquidNi-Cr alloy increases with increasing the Cr concentration in the alloy. The molar volume of Ni-Cr alloy determinedin the present work shows a positive deviation from the linear molar volume.

  10. Supercontinuum generation in a step-index chalcogenide fiber with AsSe2 core and As2S5 cladding

    Science.gov (United States)

    Gao, Weiqing; Xu, Qiang; Li, Xue; Zhang, Wei; Hu, Jigang; Li, Yuan; Chen, Xiangdong; Yuan, Zijun; Liao, Meisong; Li, Xia; Bi, Wanjun; Cheng, Tonglei; Suzuki, Takenobu; Ohishi, Yasutake

    2016-12-01

    We demonstrate the supercontinuum (SC) generation in a chalcogenide step-index fiber with AsSe2 core and As2S5 cladding. The characteristics of fiber are analyzed using the full-vectorial mode solver technique. The fiber has two zero-dispersion wavelengths at 2898 and 5140 nm. The evolving of SC spectra with fiber length and pump wavelength is investigated experimentally. The maximum SC range covering one octave from 1550 to 3300 nm is obtained when the 20 cm long fiber is pumped by 2000 nm pulses in normal dispersion region. The fiber can push forward the nonlinear application based on the stimulated Raman effect, stimulated Brillouin effect, four-wave mixing, supercontinuum generation, and so on in the mid-infrared waveband. The SCs are simulated by the nonlinear Schrödinger equation. The simulated results agree well with the experiments.

  11. Ge1Sb2Te4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ting; SONG Zhi-Tang; FENG Gao-Ming; LIU Bo; WU Liang-Cai; FENG Song-Lin; CHEN Bomy

    2007-01-01

    Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100ns. Both the values are larger than those of the Ge2Sb2 Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.

  12. A Facile Method for the Synthesis Fluorescent Zinc Chalcogenide (ZnO, ZnS and ZnSe) Nanoparticles in PS and PMMA Polymer Matrix.

    Science.gov (United States)

    Hariharan, P S; Subhashini, N; Vasanthalakshmi, J; Anthony, Savarimuthu Philip

    2016-03-01

    A simple method for the synthesis of fluorescent zinc chalcogenide (ZnO, ZnS and ZnSe) nanoparticles directly in the transparent PMMA and PS polymer matrices were reported. Highly dispersed small spherical ZnO nanoparticles (3-5 nm) was obtained by hydrothermal reaction of PMMA/PS-Zn(acac)2H2O in toluene. ZnS and ZnSe nanoparticles were prepared by heterogeneous stirring of PMMA/PS-Zn(acac)2H2O in toluene with aqueous solution of thiourea or NaHSe. Interestingly, ZnO and ZnS-PMMA thin film showed strong fluorescence quenching upon exposure to ammonia.

  13. Metal Ions Mediated Morphology and Phase Transformation of Chalcogenide Semiconductor: From CuClSe2 Microribbon to CuSe Nanosheet.

    Science.gov (United States)

    Liu, Yong-Qiang; Wu, Hao-Di; Zhao, Yu; Pan, Ge-Bo

    2015-05-01

    Foreign ions are of significant importance in controlling and modulating the morphology of semiconductor nanocrystals during the colloidal synthesis process. Herein, we demonstrate the potential of foreign metal ions to simultaneously control the morphology and crystal phase of chalcogenide semiconductors. The results indicate that the introduction of Al(3+) ions can induce the structural transformation from monoclinic CuClSe2 microribbons (MRs) to klockmannite CuSe nanosheets (NSs) and the growth of large-sized CuSe NSs. The as-prepared micrometer-sized CuSe NSs exhibit a high-conducting behavior, long-term durability, and environment stability. The novel properties enable CuSe NSs to open up a bright prospect for printable electrical interconnects and flexible electronic devices.

  14. First principles calculations of structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and PbTe compounds

    Indian Academy of Sciences (India)

    N Boukhris; H Meradji; S Amara Korba; S Drablia; S Ghemid; F El Haj Hassan

    2014-08-01

    The structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and BeTe using full-potential linear augmented plane wave (FP-LAPW) method are investigated. The exchange–correlation energy within the local density approximation (LDA) and the generalized gradient approximation (GGA) are described. The calculated structural parameters are in reasonable agreement with the available experimental and theoretical data. The electronic band structure shows that the fundamental energy gap is direct (L–L) for all the compounds. Thermal effects on some macroscopic properties of these compounds are predicted using the quasi-harmonic Debye model, in which the lattice vibrations are taken into account. The variations of the lattice constant, bulk modulus, heat capacity, volume expansion coefficient and Debye temperature with temperature and pressure are obtained successfully. The effect of spin–orbit interaction is found to be negligible in determining the thermal properties and leads to a richer electronic structure.

  15. Effects of segregation of primary alloying elements on the creep response in magnesium alloys

    DEFF Research Database (Denmark)

    Huang, Y.D.; Dieringa, H.; Hort, N.

    2008-01-01

    The segregation of primary alloying elements deteriorates the high temperature creep resistance of magnesium alloys. Annealing at high temperatures alleviating their segregations can improve the creep resistance. Present investigation on the effect of segregation of primary alloying elements...

  16. Mechanically Alloyed High Entropy Composite

    Science.gov (United States)

    Popescu, G.; Adrian, M. M.; Csaki, I.; Popescu, C. A.; Mitrică, D.; Vasile, S.; Carcea, I.

    2016-08-01

    In the last years high entropy alloys have been investigated due to their high hardness, high temperature stability and unusual properties that make these alloys to have significant interest. In comparison with traditional alloys that are based on two or three major elements, this new generation alloys consists at least of 5 principal elements, with the concentration between 5 and 35 at.%. The present paper reports synthesis of high entropy alloys (HEA) and high entropy composites (HEC) synthesized by mechanical alloying (MA). The equiatomic AlCrFeNiMn matrix was used for creating the HEA matrix, starting from elemental powders and as reinforcing material for composites was used pure graphite. The mechanical alloying process was carried out at different duration, in a high energy planetary ball mill, under argon atmosphere. The elemental powders alloying began after '5 hours of milling and was complete after 40 hours. The mechanical alloyed matrix and composite was pressed and heat treated under argon protection. The elemental powers were investigated for physical - technological properties, and by X-ray diffraction and scanning electron microscopy. Phase pressing operation was realized with a hydraulic press and the applied pressure was progressive. The sintering process was carried out at 850°C for 2 h. The X-ray diffraction revealed that the MA process resulted in solid solutions formation and also revealed body- centred cubic (BCC) and face-centred cubic (FCC) structures with average grain size around 40 nm. In addition, nanoscale particles were highlighted by scanning electron microscopy, as well as the homogeneity of the chemical composition of the matrix and composite that was confirmed by EDX microanalysis. It was noted that HEA matrix and HEA composites were processed with a high degree of compaction and with a quite large capacity of mixed powder densification (around 70%).

  17. Study of Third-Order Optical Nonlinearities of Se-Sn (Bi,Te) Quaternary Chalcogenide Thin Films Using Ti: Sapphire Laser in Femtosecond Regime

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2016-09-01

    The objective of the present research work is to study the nonlinear optical properties of quaternary Se-Sn (Bi,Te) chalcogenide thin films. A Z-scan technique utilizing 800 nm femtosecond laser source has been used for the determination of the nonlinear refractive index (n 2), two-photon absorption coefficient (β 2) and third-order susceptibility (χ (3)). In the measurement of n 2, an aperture is placed in the far field before the detector (closed aperture), while for the measurement of β 2, entire transmitted light is collected by the detector without an aperture (open aperture). Self-focusing has been observed in closed aperture transmission spectra. The appearance of the peak after the valley in this spectrum reflects the positive nonlinear refractive index. The calculated value of n 2 of the studied thin films varies from 1.06 × 10-12 cm2/W to 0.88 × 10-12 cm2/W. The compound-dependent behavior of n 2 is explained in this paper. We have also compared the experimental values of n 2 with the theoretically determined values, other compounds of chalcogenide glass and pure silica. The n 2 of the investigated thin films is found to be 3200 times higher than pure silica. The results of the open aperture Z-scan revealed that the value of β 2 of the studied compound is in the order of 10-8 cm/W. The behavior of two-photon absorption is described by means of the optical band gap (E g) of the studied compound. The variation in the figure-of-merit from 0.32 to 1.4 with varying Sn content is also reported in this paper. The higher value of nonlinearity makes this material advantageous for optical fibers, waveguides and optical limiting devices.

  18. Study of Third-Order Optical Nonlinearities of Se-Sn (Bi,Te) Quaternary Chalcogenide Thin Films Using Ti: Sapphire Laser in Femtosecond Regime

    Science.gov (United States)

    Yadav, Preeti; Sharma, Ambika

    2017-01-01

    The objective of the present research work is to study the nonlinear optical properties of quaternary Se-Sn (Bi,Te) chalcogenide thin films. A Z-scan technique utilizing 800 nm femtosecond laser source has been used for the determination of the nonlinear refractive index ( n 2), two-photon absorption coefficient ( β 2) and third-order susceptibility ( χ (3)). In the measurement of n 2, an aperture is placed in the far field before the detector (closed aperture), while for the measurement of β 2, entire transmitted light is collected by the detector without an aperture (open aperture). Self-focusing has been observed in closed aperture transmission spectra. The appearance of the peak after the valley in this spectrum reflects the positive nonlinear refractive index. The calculated value of n 2 of the studied thin films varies from 1.06 × 10-12 cm2/W to 0.88 × 10-12 cm2/W. The compound-dependent behavior of n 2 is explained in this paper. We have also compared the experimental values of n 2 with the theoretically determined values, other compounds of chalcogenide glass and pure silica. The n 2 of the investigated thin films is found to be 3200 times higher than pure silica. The results of the open aperture Z-scan revealed that the value of β 2 of the studied compound is in the order of 10-8 cm/W. The behavior of two-photon absorption is described by means of the optical band gap ( E g) of the studied compound. The variation in the figure-of-merit from 0.32 to 1.4 with varying Sn content is also reported in this paper. The higher value of nonlinearity makes this material advantageous for optical fibers, waveguides and optical limiting devices.

  19. New layered-type quaternary chalcogenides, Tl2PbMQ4 (M = Zr, Hf; Q = S, Se): structure, electronic structure, and electrical transport properties.

    Science.gov (United States)

    Sankar, Cheriyedath Raj; Assoud, Abdeljalil; Kleinke, Holger

    2013-12-16

    We have synthesized and characterized new thallium chalcogenides of the general formula Tl2PbMQ4 (M = Zr, Hf; Q = S, Se) from the constituent elements via high-temperature reaction conditions. These sulfides and selenides crystallize in the monoclinic crystal system (space group C2/c). The unit cell parameters refined from single-crystal X-ray diffraction data for Tl2PbZrS4 are a = 15.455(4) Å, b = 8.214(2) Å, c = 6.751(2) Å, β = 109.093(3)°, and V = 809.9(4) Å(3), with Z = 4. No corresponding tellurides were obtained from similar reaction conditions. The isostructural quaternary chalcogenides form a layered structure, composed of alternating metal and chalcogen layers. The latter are packed along the a axis as in the face-centered cubic packing (ABC), while the metal layers alternate between Tl layers and mixed Pb/Zr layers. All metal atoms are located in differently distorted Q6 octahedra, with the TlQ6 polyhedra being the least regular ones. Density functional theory based electronic structure calculations with inclusion of relativistic spin-orbit interactions predict (indirect) energy band gaps of 0.66 and 0.33 eV for Tl2PbZrS4 and Tl2PbHfSe4, respectively. Optical spectroscopy revealed significantly larger (direct) band gaps of 1.2 and 1.6 eV. The semiconducting character is in agreement with the charge-balanced formula (Tl(+))2Pb(2+)M(4+)(Q(2-))4. The electrical transport properties also show the semiconducting nature of these materials. For Tl2PbHfSe4, the Seebeck coefficient increases from +190 μV K(-1) at room temperature to +420 μV K(-1) at 520 K.

  20. Modeling dissolution in aluminum alloys

    Science.gov (United States)

    Durbin, Tracie Lee

    2005-07-01

    Aluminum and its alloys are used in many aspects of modern life, from soda cans and household foil to the automobiles and aircraft in which we travel. Aluminum alloy systems are characterized by good workability that enables these alloys to be economically rolled, extruded, or forged into useful shapes. Mechanical properties such as strength are altered significantly with cold working, annealing, precipitation-hardening, and/or heat-treatments. Heat-treatable aluminum alloys contain one or more soluble constituents such as copper, lithium, magnesium, silicon and zinc that individually, or with other elements, can form phases that strengthen the alloy. Microstructure development is highly dependent on all of the processing steps the alloy experiences. Ultimately, the macroscopic properties of the alloy depend strongly on the microstructure. Therefore, a quantitative understanding of the microstructural changes that occur during thermal and mechanical processing is fundamental to predicting alloy properties. In particular, the microstructure becomes more homogeneous and secondary phases are dissolved during thermal treatments. Robust physical models for the kinetics of particle dissolution are necessary to predict the most efficient thermal treatment. A general dissolution model for multi-component alloys has been developed using the front-tracking method to study the dissolution of precipitates in an aluminum alloy matrix. This technique is applicable to any alloy system, provided thermodynamic and diffusion data are available. Treatment of the precipitate interface is explored using two techniques: the immersed-boundary method and a new technique, termed here the "sharp-interface" method. The sharp-interface technique is based on a variation of the ghost fluid method and eliminates the need for corrective source terms in the characteristic equations. In addition, the sharp-interface method is shown to predict the dissolution behavior of precipitates in aluminum

  1. Alloying and Casting Furnace for Shape Memory Alloys Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The concept in the proposed project is to create a melting, alloying and casting furnace for the processing titanium based SMA using cold crucible techniques. The...

  2. Alloy design for intrinsically ductile refractory high-entropy alloys

    Science.gov (United States)

    Sheikh, Saad; Shafeie, Samrand; Hu, Qiang; Ahlström, Johan; Persson, Christer; Veselý, Jaroslav; Zýka, Jiří; Klement, Uta; Guo, Sheng

    2016-10-01

    Refractory high-entropy alloys (RHEAs), comprising group IV (Ti, Zr, Hf), V (V, Nb, Ta), and VI (Cr, Mo, W) refractory elements, can be potentially new generation high-temperature materials. However, most existing RHEAs lack room-temperature ductility, similar to conventional refractory metals and alloys. Here, we propose an alloy design strategy to intrinsically ductilize RHEAs based on the electron theory and more specifically to decrease the number of valence electrons through controlled alloying. A new ductile RHEA, Hf0.5Nb0.5Ta0.5Ti1.5Zr, was developed as a proof of concept, with a fracture stress of close to 1 GPa and an elongation of near 20%. The findings here will shed light on the development of ductile RHEAs for ultrahigh-temperature applications in aerospace and power-generation industries.

  3. Laser surface alloying of aluminium-transition metal alloys

    Directory of Open Access Journals (Sweden)

    Almeida, A.

    1998-04-01

    Full Text Available Laser surface alloying has been used as a tool to produce hard and corrosion resistant Al-transition metal (TM alloys. Cr and Mo are particularly interesting alloying elements to produce stable highstrength alloys because they present low diffusion coefficients and solid solubility in Al. To produce Al-TM surface alloys a two-step laser process was developed: firstly, the material is alloyed using low scanning speed and secondly, the microstructure is modified by a refinement step. This process was used in the production of Al-Cr, Al-Mo and Al-Nb surface alloys by alloying Cr, Mo or Nb powder into an Al and 7175 Al alloy substrate using a CO2 laser. This paper presents a review of the work that has been developed at Instituto Superior Tecnico on laser alloying of Al-TM alloys, over the last years.

    En el presente trabajo se estudia la aleación superficial mediante láser de aluminio con metales de transición. El cromo y el molibdeno son particularmente interesantes porque producen aleaciones de alta resistencia y por el bajo coeficiente de difusión y solución sólida en aluminio. Para producir estas aleaciones se ha seguido un procedimiento desarrollado en dos partes. En primer lugar, el material se alea usando una baja velocidad de procesado y en segundo lugar la estructura se modifica mediante un refinamiento posterior. Este procedimiento se ha empleado en la producción de aleaciones Al-Cr, Al-Mo y Al-Nb mediante aleación con láser de CO2 de polvos de Cr, Mo o Nb en aluminio y la aleación 7175. Este trabajo es una revisión del desarrollado en el Instituto Superior Técnico de Lisboa en los últimos años.

  4. Hydrazine-Free Solution-Deposited CuIn(S,Se)2 Solar Cells by Spray Deposition of Metal Chalcogenides

    Energy Technology Data Exchange (ETDEWEB)

    Arnou, Panagiota; van Hest, Maikel F. A. M.; Cooper, Carl S.; Malkov, Andrei V.; Walls, John M.; Bowers, Jake W.

    2016-05-18

    Solution processing of semiconductors, such as CuInSe2 and its alloys (CIGS), can significantly reduce the manufacturing costs of thin film solar cells. Despite the recent success of solution deposition approaches for CIGS, toxic reagents such as hydrazine are usually involved, which introduce health and safety concerns. Here, we present a simple and safer methodology for the preparation of high-quality CuIn(S, Se)2 absorbers from metal sulfide solutions in a diamine/dithiol mixture. The solutions are sprayed in air, using a chromatography atomizer, followed by a postdeposition selenization step. Two different selenization methods are explored resulting in power conversion efficiencies of up to 8%.

  5. Kinetics of Amorphous-Crystalline Transformation of Some Se-Te-In Chalcogenide Glasses Using Gao and Wang Model

    OpenAIRE

    Balbir Singh Patial; Nagesh Thakur; S.K. Tripathi

    2013-01-01

    The present study reports the assessment of activation energy for crystallization and crystallization reaction order (Avrami exponent n) for the amorphous-crystallization transformation process of Se85 − xTe15Inx (x  2, 6 and 10) amorphous alloys using differential scanning calorimetry (DSC) technique under non-isothermal conditions at four different heating rates (5, 10, 15 and 20 °C/min) through Gao and Wang model. The introduction of In to the Se-Te system is found to bring a change in cr...

  6. Lead telluride alloy thermoelectrics

    Directory of Open Access Journals (Sweden)

    Aaron D. LaLonde

    2011-11-01

    Full Text Available The opportunity to use solid-state thermoelectrics for waste heat recovery has reinvigorated the field of thermoelectrics in tackling the challenges of energy sustainability. While thermoelectric generators have decades of proven reliability in space, from the 1960s to the present, terrestrial uses have so far been limited to niche applications on Earth because of a relatively low material efficiency. Lead telluride alloys were some of the first materials investigated and commercialized for generators but their full potential for thermoelectrics has only recently been revealed to be far greater than commonly believed. By reviewing some of the past and present successes of PbTe as a thermoelectric material we identify the issues for achieving maximum performance and successful band structure engineering strategies for further improvements that can be applied to other thermoelectric materials systems.

  7. Metallic alloy stability studies

    Science.gov (United States)

    Firth, G. C.

    1983-01-01

    The dimensional stability of candidate cryogenic wind tunnel model materials was investigated. Flat specimens of candidate materials were fabricated and cryo-cycled to assess relative dimensional stability. Existing 2-dimensional airfoil models as well as models in various stages of manufacture were also cryo-cycled. The tests indicate that 18 Ni maraging steel offers the greatest dimensional stability and that PH 13-8 Mo stainless steel is the most stable of the stainless steels. Dimensional stability is influenced primarily by metallurgical transformations (austenitic to martensitic) and manufacturing-induced stresses. These factors can be minimized by utilization of stable alloys, refinement of existing manufacturing techniques, and incorporation of new manufacturing technologies.

  8. Emissivity measurements on aeronautical alloys

    Energy Technology Data Exchange (ETDEWEB)

    Campo, L. del, E-mail: leire.del-campo@cnrs-orleans.f [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Perez-Saez, R.B., E-mail: raul.perez@ehu.e [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Instituto de Sintesis y Estudio de Materiales, Universidad del Pais Vasco, Apdo. 644, 48080 Bilbao (Spain); Gonzalez-Fernandez, L. [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Esquisabel, X.; Fernandez, I. [Industria de Turbo Propulsores, S.A., Planta de Zamudio, Edificio 300, 48170 Zamudio, Bizkaia (Spain); Gonzalez-Martin, P. [Industria de Turbo Propulsores, S.A., Parque empresarial San Fernando, Avda. Castilla 2, 28830 San Fernando de Henares, Madrid (Spain); Tello, M.J. [Departamento de Fisica de la Materia Condensada, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco, Barrio Sarriena s/n, 48940 Leioa, Bizkaia (Spain); Instituto de Sintesis y Estudio de Materiales, Universidad del Pais Vasco, Apdo. 644, 48080 Bilbao (Spain)

    2010-01-21

    The emissivity of three Ni and Co based aeronautical alloys is analyzed in this paper. These alloys are employed in high temperature environments whenever good corrosion resistance, high temperature resistance and high strength are essential. Thus, apart from the aeronautical industry, these alloys are also used in other technological applications, as for example, aerospace, nuclear reactors, and tooling. The results in this paper extend the emissivity data for these alloys available in the literature. Emissivity dependence on the radiation wavelength (2-22 {mu}m), sample temperature (200-650 {sup o}C) and emission angle (0-85{sup o}) has been investigated. In addition, the effect of surface finish and oxidation has also been taken into consideration. The data in this paper have several applications, as temperature measurement of a target by pyrometry, low observability of airplanes and thermal radiation heat transfer simulation in airplane nozzles or furnaces.

  9. Experimental study of the structure of chalcogenide glassy semiconductors in three-component systems of Ge-As-Se and As-Sb-Se by means of NQR and EPR spectroscopy

    Science.gov (United States)

    Bolebrukh, Olga; Sinyavsky, Nikolay; Korneva, Irina; Dobosz, Bernadeta; Ostafin, Michal; Nogaj, Boleslaw; Krzyminiewski, Ryszard

    2013-12-01

    The structure of chalcogenide glassy semiconductors in three-component systems of Ge-As-Se and As-Sb-Se has been studied by means of both NQR (nuclear quadrupole resonance) and EPR (electron paramagnetic resonance) spectroscopy. It is investigated that in the glasses of both systems the value of the electric field gradient at the resonating nuclei grows with increasing concentration of the clusters As2Se3 and Sb2Se3, thereby increasing the NQR resonance frequencies. It appears that for the Ge-As-Se system the structural transition from a two-dimensional to three-dimensional structure occurs at average coordination number bar r = 2.45. The EPR spectral parameters of glasses depend on the composition, the average coordination number and the temperature, and these are discussed. The effect of "ageing" for CGS (chalcogenide glassy semiconductors) of As-Sb-Se system due to partial crystallization of the sample is observed from the EPR spectra.

  10. Kinetics of aluminum lithium alloys

    Science.gov (United States)

    Pletcher, Ben A.

    2009-12-01

    Aluminum lithium alloys are increasingly used in aerospace for their high strength-to-weight ratio. Additions of lithium, up to 4.2 wt% decrease the alloy density while increasing the modulus and yield strength. The metastable, second phase Al3Li or delta' is intriguing, as it remains spherical and coherent with the matrix phase, alpha, well into the overaged condition. Small interfacial strain energy allows these precipitates to remain spherical for volume fractions (VV ) of delta' less than 0.3, making this alloy system ideal for investigation of late-stage coarsening phenomena. Experimental characterization of three binary Al-Li alloys are presented as a critical test of diffusion screening theory and multi-particle diffusion simulations. Quantitative transmission electron microscopy is used to image the precipitates directly using the centered dark-field technique. Images are analyzed autonomously within a novel Matlab function that determines the center and size of each precipitate. Particle size distribution, particle growth kinetics, and maximum particle size are used to track the precipitate growth and correlate with the predictions of screening theory and multi-particle diffusion simulations. This project is the first extensive study of Al-Li alloys, in over 25 years, applying modern transmission electron microscopy and image analysis techniques. Previous studies sampled but a single alloy composition, and measured far fewer precipitates. This study investigates 3 alloys with volume fractions of the delta precipitates, VV =0.1-0.27, aged at 225C for 1 to 10 days. More than 1000 precipitates were sampled per aging time, creating more statistically significant data. Experimental results are used to test the predictions based on diffusion screening theory and multi-particle aging simulations. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

  11. Alloys developed for high temperature applications

    Science.gov (United States)

    Basuki, Eddy Agus; Prajitno, Djoko Hadi; Muhammad, Fadhli

    2017-01-01

    Alloys used for high temperatures applications require combinations of mechanical strength, microstructural stability and corrosion/oxidation resistance. Nickel base superalloys have been traditionally the prime materials utilized for hot section components of aircraft turbine engines. Nevertheless, due to their limited melting temperatures, alloys based on intermetallic compounds, such as TiAl base alloys, have emerged as high temperature materials and intensively developed with the main aim to replace nickel based superalloys. For applications in steam power plants operated at lower temperatures, ferritic high temperature alloys still attract high attention, and therefore, development of these alloys is in progress. This paper highlights the important metallurgical parameters of high temperature alloys and describes few efforts in the development of Fe-Ni-Al based alloys containing B2-(Fe,Ni)Al precipitates, oxide dispersion strengthening (ODS) ferritic steels and titanium aluminide based alloys include important protection system of aluminide coatings.

  12. Effects of various Mg-Sr master alloys on microstructural refinement of ZK60 magnesium alloy

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The effects of various Mg-Sr master alloys (conventional as-cast, rapidly-solidified, rolled and solutionized) on microstructural refinement of ZK60 magnesium alloy were investigated. The results indicate that the refinement efficiency of various Mg-Sr master alloys in ZK60 alloy is different. The rolled Mg-Sr master alloy is found to have relatively higher refinement efficiency than the conventional as-cast, solutionized and rapidly-solidified Mg-Sr master alloys. After being treated with the rolled Mg-Sr master alloy, the ZK60 alloy obtains the minimum average grain size of 33 μm. The difference of various Mg-Sr master alloys in refinement efficiency might be related to the initial microstructure change of various Mg-Sr master alloys.

  13. Laser cladding of titanium alloy coating on titanium aluminide alloy substrate

    Institute of Scientific and Technical Information of China (English)

    徐子文; 黄正; 阮中健

    2003-01-01

    A new diffusion bonding technique combined with laser cladding process was developed to join TiAl alloy to itself and Ti-alloys. In order to enhance the weldability of TiAl alloys, Ti-alloy coatings were fabricated by laser cladding on the TiAl alloy. Ti powder and shaped Ti-alloy were respectively used as laser cladding materials. The materials characterization was carried out by OM, SEM, EDS and XRD analysis. The results show that the laser cladding process with shaped Ti-alloy remedy the problems present in the conventional process with powder, such as impurities, cracks and pores. The diffusion bonding of TiAl alloy with Ti-alloy coating to itself and Ti-alloy was carried out with a Gleeble 1500 thermal simulator. The sound bonds of TiAl/TiAl, TiAl/Ti were obtained at a lower temperature and with shorter time.

  14. Shape memory alloys. Ultralow-fatigue shape memory alloy films.

    Science.gov (United States)

    Chluba, Christoph; Ge, Wenwei; Lima de Miranda, Rodrigo; Strobel, Julian; Kienle, Lorenz; Quandt, Eckhard; Wuttig, Manfred

    2015-05-29

    Functional shape memory alloys need to operate reversibly and repeatedly. Quantitative measures of reversibility include the relative volume change of the participating phases and compatibility matrices for twinning. But no similar argument is known for repeatability. This is especially crucial for many future applications, such as artificial heart valves or elastocaloric cooling, in which more than 10 million transformation cycles will be required. We report on the discovery of an ultralow-fatigue shape memory alloy film system based on TiNiCu that allows at least 10 million transformation cycles. We found that these films contain Ti2Cu precipitates embedded in the base alloy that serve as sentinels to ensure complete and reproducible transformation in the course of each memory cycle.

  15. Shape memory alloy flexures

    Energy Technology Data Exchange (ETDEWEB)

    Bellouard, Yves; Clavel, Reymond

    2003-07-25

    Flexures are used in precision engineering where highly accurate, wear-free, smooth and repeatable motion is desired. Flexures are based on deformation of material to achieve a motion between elastically joined parts. They are used in a variety of precision mechanisms such as high-resolution balances or high accuracy optical positioning stages. Shape memory alloys (SMA) are an attractive option in designing flexures. Superelastic flexures can withstand larger deformations for the same weight as a conventional flexure. In addition, the damping properties of SMA, controllable through the phase transformation, offer new design opportunities for adaptive compliant mechanisms. The martensitic phase transformation can also be used to shift the natural frequency of flexures adding useful functionalities such as vibration rejection. This paper presents design principles of SMA flexures based on non-linear beam theory. Results show a good agreement between measured and predicted data. In addition, experimental results on phase transformation effects on damping behavior are also presented. Both, natural-frequency shift and increased damping were observed in bulk-micro machined flexures using the R-phase transformation. These results demonstrate the feasibility of natural-frequency-tunable flexures.

  16. Thermomechanical behavior of comercial yellow gold alloy

    Directory of Open Access Journals (Sweden)

    Miloš G. Djordjević

    2016-03-01

    Full Text Available With the development of science and technology, in the late 19th century, began the research and application of new alloys for making jewelry. By adding different amounts of Cu and Ag alloy of Au, as well as adding some new elements (Zn, alloys were obtained with different color spectrum (from red to yellow and different technological and metallurgical characteristics. This paper aims to show thermomechanical behavior of commercial yellow Au alloys for making jewelry.

  17. Oxidation of low cobalt alloys

    Science.gov (United States)

    Barrett, C. A.

    1982-01-01

    Four high temperature alloys: U-700, Mar M-247, Waspaloy and PM/HIP U-700 were modified with various cobalt levels ranging from 0 percent to their nominal commercial levels. The alloys were then tested in cyclic oxidation in static air at temperatures ranging from 1000 to 1150 C at times from 500 to 100 1 hour cycles. Specific weight change with time and X-ray diffraction analyses of the oxidized samples were used to evaluate the alloys. The alloys tend to be either Al2O3/aluminate spinel or Cr2O3/chromite spinel formers depending on the Cr/Al ratio in the alloy. Waspaloy with a ratio of 15:1 is a strong Cr2O3 former while this U-700 with a ratio of 3.33:1 tends to form mostly Cr2O3 while Mar M-247 with a ratio of 1.53:1 is a strong Al2O3 former. The best cyclic oxidation resistance is associated with the Al2O3 formers. The cobalt levels appear to have little effect on the oxidation resistance of the Al2O3/aluminate spinel formers while any tendency to form Cr2O3 is accelerated with increased cobalt levels and leads to increased oxidation attack.

  18. Improved thermal treatment of aluminum alloy 7075

    Science.gov (United States)

    Cocks, F. H.

    1968-01-01

    Newly developed tempering treatment considerably increases the corrosion resistance of 7075-T6 alloy and concomitantly preserves its yield strength. The results of tests on samples of the alloy subjected to the above treatments show that when the overaging period is 12 hours /at 325 degrees F/, the alloy exhibits a yield strength of 73,000 psi.

  19. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    2004-01-01

    The present paper describes the preparation and properties of bulk amorphous quarternary Mg-based alloys and the influence of additional elements on the ability of the alloy to form bulk amorphous. The main goal is to find a Mg-based alloy system which shows both high strength to weight ratio and...

  20. Corrosion Behaviour of New Zr Alloys

    DEFF Research Database (Denmark)

    Tolksdorf, E.

    1974-01-01

    Corrosion studies have indicated that the most promising replacements for Zicaloy-2 are ZrCrFe, ZrVFe and probably ZrNbTa, provided they are in their optimized condition. These alloys are conventionally manufactured alloys. An internally oxidized ZrMgO alloy is even superior, from the corrosion...

  1. Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example of Cs2MIIM3IVQ8

    Science.gov (United States)

    Besse, Rafael; Sabino, Fernando P.; Da Silva, Juarez L. F.

    2016-04-01

    Quaternary chalcogenide materials offer a wide variety of chemical and physical properties, and hence, those compounds have been widely studied for several technological applications. Recently, experimental studies have found that the chalcogenide Cs2MIIM3IVQ8 family (MII = Mg , Zn , Cd , Hg , MIV = Ge , Sn and Q = S , Se , Te ), which includes 24 compounds, yields a wide range of band gaps, namely, from 1.07 to 3.4 eV, and hence, they have attracted great interest. To obtain an improved atomistic understanding of the role of the cations and anions on the physical properties, we performed a first-principles investigation of the 24 Cs2MIIM3IVQ8 compounds employing density functional theory within semilocal and hybrid exchange-correlation energy functionals and the addition of van der Waals corrections to improve the description of the weakly interacting layers. Our lattice parameters are in good agreement with the available experimental data (i.e., 11 compounds), and the equilibrium volume increases linearly by increasing the atomic number of the chalcogen, which can be explained by the increased atomic radius of the chalcogen atoms from S to Te . We found that van der Waals corrections play a crucial role in the lattice parameter in the stacking direction of the Cs2MIIM3IVQ8 layers, while the binding energy per unit area has similar magnitude as obtained for different layered materials. We obtained that the band gaps follow a linear relation as a function of the unit cell volume, which can be explained by the atomic size of the chalcogen atom and the relative position of the Q p states within the band structure. The fundamental and optical band gaps differ by less than 0.1 eV. The band gaps obtained with the hybrid functional are in good agreement with the available experimental data. Furthermore, we found from the Bader analysis, that the Coulomb interations among the cations and anions play a crucial role on the energetic properties.

  2. Current research situation of titanium alloys in China

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Titanium and its alloys possess excellent comprehensive properties, and they are widely used in many fields. China pays great attentions to the research on new titanium alloys. This paper mainly reviews the research on new Ti alloys in China, for example, high strength and high toughness Ti alloys, burn resistant Tialloys, high temperature Ti alloys, low cost Ti alloys and so on.New basic theories on Ti alloys developed in China in recent years are also reviewed.

  3. Alloy 718 for Oilfield Applications

    Science.gov (United States)

    deBarbadillo, John J.; Mannan, Sarwan K.

    2012-02-01

    Alloy 718 (UNS N07718) was developed for use in aircraft gas turbine engines, but its unique combination of room-temperature strength and aqueous corrosion resistance made it a candidate for oilfield fasteners, valves, drill tools, and completion equipment. As well environments became more severe, stress corrosion and hydrogen embrittlement failures in production equipment drove the evolution of the composition and microstructure that distinguish today's oilfield-grade 718 from aerospace grades. This paper reviews the development of the grade and its applications and describes some of its unique characteristics, testing, and manufacturing methods as well as newer alloys designed for high-pressure high-temperature (HPHT) conditions.

  4. PROCESS OF DISSOLVING ZIRCONIUM ALLOYS

    Science.gov (United States)

    Shor, R.S.; Vogler, S.

    1958-01-21

    A process is described for dissolving binary zirconium-uranium alloys where the uranium content is about 2%. In prior dissolution procedures for these alloys, an oxidizing agent was added to prevent the precipitation of uranium tetrafluoride. In the present method complete dissolution is accomplished without the use of the oxidizing agent by using only the stoichiometric amount or slight excess of HF required by the zirconium. The concentration of the acid may range from 2M to 10M and the dissolution is advatageously carried out at a temperature of 80 deg C.

  5. High strength, tough alloy steel

    Science.gov (United States)

    Thomas, Gareth; Rao, Bangaru V. N.

    1979-01-01

    A high strength, tough alloy steel is formed by heating the steel to a temperature in the austenite range (1000.degree.-1100.degree. C.) to form a homogeneous austenite phase and then cooling the steel to form a microstructure of uniformly dispersed dislocated martensite separated by continuous thin boundary films of stabilized retained austenite. The steel includes 0.2-0.35 weight % carbon, at least 1% and preferably 3-4.5% chromium, and at least one other substitutional alloying element, preferably manganese or nickel. The austenite film is stable to subsequent heat treatment as by tempering (below 300.degree. C.) and reforms to a stable film after austenite grain refinement.

  6. Bulk nano-crystalline alloys

    OpenAIRE

    T.-S. Chin; Lin, C. Y.; Lee, M.C.; R.T. Huang; S. M. Huang

    2009-01-01

    Bulk metallic glasses (BMGs) Fe–B–Y–Nb–Cu, 2 mm in diameter, were successfully annealed to become bulk nano-crystalline alloys (BNCAs) with α-Fe crystallite 11–13 nm in size. A ‘crystallization-and-stop’ model was proposed to explain this behavior. Following this model, alloy-design criteria were elucidated and confirmed successful on another Fe-based BMG Fe–B–Si–Nb–Cu, 1 mm in diameter, with crystallite sizes 10–40 nm. It was concluded that BNCAs can be designed in general by the proposed cr...

  7. Surface Tension Calculation of Undercooled Alloys

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Based on the Butler equation and extrapolated thermodynamic data of undercooled alloys from those of liquid stable alloys, a method for surface tension calculation of undercooled alloys is proposed. The surface tensions of liquid stable and undercooled Ni-Cu (xNi=0.42) and Ni-Fe (xNi=0.3 and 0.7) alloys are calculated using STCBE (Surface Tension Calculation based on Butler Equation) program. The agreement between calculated values and experimental data is good enough, and the temperature dependence of the surface tension can be reasonable down to 150-200 K under the liquid temperature of the alloys.

  8. An introduction to surface alloying of metals

    CERN Document Server

    Hosmani, Santosh S; Goyal, Rajendra Kumar

    2014-01-01

    An Introduction to Surface Alloying of Metals aims to serve as a primer to the basic aspects of surface alloying of metals. The book serves to elucidate fundamentals of surface modification and their engineering applications. The book starts with basics of surface alloying and goes on to cover key surface alloying methods, such as carburizing, nitriding, chromizing, duplex treatment, and the characterization of surface layers. The book will prove useful to students at both the undergraduate and graduate levels, as also to researchers and practitioners looking for a quick introduction to surface alloying.

  9. ZIRCONIUM-TITANIUM-BERYLLIUM BRAZING ALLOY

    Science.gov (United States)

    Gilliland, R.G.; Patriarca, P.; Slaughter, G.M.; Williams, L.C.

    1962-06-12

    A new and improved ternary alloy is described which is of particular utility in braze-bonding parts made of a refractory metal selected from Group IV, V, and VI of the periodic table and alloys containing said metal as a predominating alloying ingredient. The brazing alloy contains, by weight, 40 to 50 per cent zirconium, 40 to 50 per cent titanium, and the balance beryllium in amounts ranging from 1 to 20 per cent, said alloy having a melting point in the range 950 to 1400 deg C. (AEC)

  10. Alloy softening in binary iron solid solutions

    Science.gov (United States)

    Stephens, J. R.; Witzke, W. R.

    1976-01-01

    An investigation was conducted to determine softening and hardening behavior in 19 binary iron-alloy systems. Microhardness tests were conducted at four temperatures in the range 77 to 411 K. Alloy softening was exhibited by 17 of the 19 alloy systems. Alloy softening observed in 15 of the alloy systems was attributed to an intrinsic mechanism, believed to be lowering of the Peierls (lattice friction) stress. Softening and hardening rates could be correlated with the atomic radius ratio of solute to iron. Softening observed in two other systems was attributed to an extrinsic mechanism, believed to be associated with scavenging of interstitial impurities.

  11. An optical study of vacuum evaporated Se 85-xTe 15Bi x chalcogenide thin films

    Science.gov (United States)

    Ambika; Barman, P. B.

    2010-02-01

    Thin films of Se 85-xTe 15Bi x ( x=0, 1, 2, 3, 4, 5) glassy alloys prepared by melt quenching technique, are deposited on glass substrate using thermal evaporation technique under vacuum. The analysis of transmission spectra, measured at normal incidence, in the spectral range 400-1500 nm helphelps us in the optical characterization of thin films under study. Well -known Swanepoel's method is employed to determine the refractive index ( n) and film thickness ( d). The increase in n with increasing Bi content over the entire spectral range is related to the increased polarizability of the larger Bi atom (atomic radius 1.46 Å) compared with the Se atom (atomic radius 1.16 Å). Dispersion energy ( E d), average energy gap ( E0) and static refractive index ( n0) isare calculated using Wemple-DiDomenico model (WDD). The value of absorption coefficient ( α) and hence extinction coefficient ( k) hashave been determined from transmission spectra. Optical band gap ( E g) is estimated using Tauc's extrapolation and is found to decrease from 1.46 to 1.24 eV with the Bi addition. This behavior of optical band gap is interpreted in terms of electronegativity difference of the atoms involved and cohesive energy of the system.

  12. Microstructure and property characterization of a modified zinc-base alloy and comparison with bearing alloys

    Science.gov (United States)

    Prasad, B. K.; Patwardhan, A. K.; Yegneswaran, A. H.

    1998-02-01

    The microstructure and physical, mechanical, and tribological properties of a modified zinc-base alloy have been characterized. In order to assess its utility as a bearing alloy, its properties have also been compared with those of a similarly processed conventional zinc-base alloy and a leaded-tin bronze (conforming to ZA27 and SAE 660 specifications, respectively) used for bearing applications. The modified zinc-base alloy shows promise in terms of better elevated-temperature strength and wear response at higher sliding speeds relative to the conventional zinc-base alloy. Interestingly, the wear behavior (especially the seizure pressure) of the modified alloy was also comparable to that of the bronze specimens at the maximum sliding speed, and was superior at the minimum sliding speed. The modified alloy also attained lower density and better hardness. Alloy behavior has been linked to the nature and type of the alloy microconstituents.

  13. ac conductivity and dielectric properties of amorphous Se{sub 80}Te{sub 20-x}Ge{sub x} chalcogenide glass film compositions

    Energy Technology Data Exchange (ETDEWEB)

    Hegab, N.A. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)], E-mail: abir_net_2005@hotmail.com; Afifi, M.A.; Atyia, H.E.; Farid, A.S. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2009-05-27

    Thin films of the prepared Se{sub 80}Te{sub 20-x}Ge{sub x} (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the {omega}{sup s} law, in accordance with the hopping model, s is found to be temperature dependent (s < 1) and its value goes down as the temperature is increased. The temperature dependence of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping (CBH) model. Values of dielectric constant {epsilon}{sub 1} and dielectric loss {epsilon}{sub 2} were found to decrease with frequency and increase with temperature. The maximum barrier height W{sub m}, calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

  14. External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX (X=S, Se and Te)

    Energy Technology Data Exchange (ETDEWEB)

    Seddik, T. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Bouhemadou, A.; Guechi, N. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif (Algeria); Sayede, A. [Université Lille Nord de France, F-59000 Lille (France); Université-Artois, UCCS, F-62300 Lens (France); CNRS, UMR 8181, F-59650 Villeneuve d’Ascq (France); Varshney, D. [Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, Madhya Pradesh (India); Al-Douri, Y. [Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia)

    2013-11-01

    The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: X=S, Se, and Te) in their low-pressure phase (Fm3{sup ¯}m) and high-pressure phase (Pm3{sup ¯}m). The exchange-correlation potential is treated with the generalized gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE). Temperature dependence of the volume and both adiabatic and isothermal bulk moduli is predicted for a temperature range from 0to1200K for the both phases of the herein considered materials. Furthermore, we have analyzed the thermodynamic properties such as the heat capacities, C{sub V} and C{sub P}, thermal expansion, α, and Debye temperature, Θ{sub D,} under variable pressure and temperature. We have calculated the isothermal elastic constants C{sub ij}{sup T} of the YX monochalcogenides in both NaCl-B1 and CsCl-B2 phases at zero pressure and a temperature range 0−1200K. The results show that rare earth yttrium monochalcogenides are mechanically stable at high temperature. The elastic anisotropy of all studied materials in the two phases has been studied using three different methods.

  15. Effect of Film Thickness on the Optical Parameters and Electrical Conductivity of Te10Ge10Se77Sb3 Chalcogenide Glass

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several thin films of Te10Ge10Se77Sb3 chalcogenide glass of different thicknesses (250 nm to 400 nm) were prepared by thermalevaporation under vacuum of 133×10-6 Pa (10-6torr). X- ray diffraction analysis showed the amorphicity of the preparedfilms which become partially crystalline by annealing. Transmittance and reflectance measurements in the spectral range of200 nm to 2500 nm have been carried out at normal incidence. The analysis of the absorption coefficient data showed theexistence of indirect transition for the photon energy E in the range 1~3 eV and direct transition for E>3 eV. From thedetermination of the optical constants (n, k), the dispersion of the refractive index has anomalous behaviour in the region ofthe fundamental absorption edge, and followed by the single- effective oscillator approach. The investigated optical parameterssuch as the optical energy gap Eopt, the high frequency dielectric constant εoo, the oscillator position λo, and the oscillatorstrength So, were significantly affected by the film thickness. The characteristic energy gap obtained from the conductivitymeasurements is nearly half the value of that obtained from the optical data as in the case of thickness 400 nm. The activationenergy is 0.65 eV and the indirect optical gap is 1.32 eV.

  16. Structure and second-order nonlinearity of GeS2-Ga2S3-X2S3 (X=P,As,Sb) chalcogenide glasses

    Institute of Scientific and Technical Information of China (English)

    GONG Yue-qiu; GUO Hai-tao; ZHAO Xiu-jian

    2006-01-01

    To find new chalcogenide glass possessing larger second-order non-linearity,glasses with compositions Ge-Ga-X-S (X=P,As,Sb) were prepared via melt quenching technique. The amorphous nature of all the compositions of the as-quenched glasses was confirmed by X-ray diffraction(XRD). The glassy thermal properties of the as-quenched glasses were established by differential thermal analyses(DTA). The glass structure was studied by RAMAN spectra and the second order nonlinearity was studied by the Maker Fringe method after the electron beam poling(EBP) and electric/temperature field poling(ETFP) respectively. Additions of various pnicogen atoms into the Ge-Ga-S glasses lead to the difference in the second order nonlinearity of the glass. It's found that glasses with different structures result in different SHG intensities,and even more,a large second order nonlinear susceptibility c(2) of about 9 pm/V was obtained for all the glasses and the reasons for such a large susceptibility were analyzed.

  17. New Intermetallic Ternary Phosphide Chalcogenide AP2-xXx (A = Zr, Hf; X = S, Se) Superconductors with PbFCl-Type Crystal Structure

    Science.gov (United States)

    Kitô, Hijiri; Yanagi, Yousuke; Ishida, Shigeyuki; Oka, Kunihiko; Gotoh, Yoshito; Fujihisa, Hiroshi; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi

    2014-07-01

    We have synthesized a series of intermetallic ternary phosphide chalcogenide superconductors, AP2-xXx (A = Zr, Hf; X = S, Se), using the high-pressure synthesis technique. These materials have a PbFCl-type crystal structure (space group P4/nmm) when x is greater than 0.3. The superconducting transition temperature Tc changes systematically with x, yielding dome-like phase diagrams. The maximum Tc is achieved at approximately x = 0.7, at which point the Tc is 6.3 K for ZrP2-xSex (x = 0.75), 5.5 K for HfP2-xSex (x = 0.7), 5.0 K for ZrP2-xSx (x = 0.675), and 4.6 K for Hfp2-xSx (x = 0.5). They are typical type-II superconductors and the upper and lower critical fields are estimated to be 2.92 T at 0 K and 0.021 T at 2 K for ZrP2-xSex (x = 0.75), respectively.

  18. Enhancement in CO2 Adsorption Capacity and Selectivity in the Chalcogenide Aerogel CuSb2S4 by Post-synthetic Modification with LiCl

    KAUST Repository

    Ahmed, Ejaz

    2015-09-11

    The new chalcogel CuSb2S4 was obtained by reacting Cu(OAc)2·H2O with KSbS2 in a water/formamide mixture at room temperature. In order to modify the gas adsorption capacity the synthesized CuSb2S4 aerogel was loaded with different amounts of LiCl. CO2 adsorption measurements on the CuSb2S4 aerogel before and after treatment with LiCl showed more than three times increased uptake of the LiCl-modified chalcogel. The selectivities of the gas pairs CO2/H2 and CO2/CH4 in the LiCl-treated chalcogel are 235 and 105 respectively and amongst the highest reported for chalcogenide-based aerogels. In comparison with other porous materials like zeolites, activated carbon and most of the Metal Organic Frameworks (MOFs) or Porous Organic Frameworks (POFs), our synthesized aerogels show good air and moisture stability. Although, the CO2 storage capacity of our aerogels is relatively low, however the selectivity of CO2 over H2 or CH4 in LiCl-loaded aerogels are higher than in zeolites, activated carbon as well as some MOFs like Cu-BTC and MOF-5 etc.

  19. High Damping Alloys and Their Application

    Institute of Scientific and Technical Information of China (English)

    Fuxing Yin

    2000-01-01

    Damping alloys show prospective applications in the elimination of unwanted vibrations and acoustic noise. The basic definitions and characterization methods of damping capacity are reviewed in this paper. Several physical mechanisms controlled by the alloy microstructure are responsible for the damping behavior in the damping alloys. Composite, dislocation, ferromagnetic and planar defect types are commonly classified for the alloys, which show the different damping behavior against temperature, frequency of vibration,amplitude of vibration and damping modes. Development of practically applicable damping alloys requires the higher mechanical properties and adequate workability, besides the high damping capacity. A new Mn-Cu damping alloy, named as M2052 alloy, is recently developed with possible industrial applications.

  20. Paracrystalline property of high-entropy alloys

    Directory of Open Access Journals (Sweden)

    Shaoqing Wang

    2013-10-01

    Full Text Available Atomic structure models of six-component high-entropy alloys with body-centered cubic structure are successfully built according to the principle of maximum entropy for the first time. The lattice distortion parameters g of seven typical high-entropy alloys are calculated. From the optimized lattice configuration of high-entropy alloys, we show that these alloys are ideal three-dimensional paracrystals. The formation mechanism, structural feature, mechanical property, and application prospect of high-entropy alloys are discussed in comparison with the traditional alloys. The novel properties of body-centered cubic high-entropy alloys are attributed to the failure of dislocation deformation mechanism and the difficulty of directed particle diffusion.

  1. Passive Corrosion Behavior of Alloy 22

    Energy Technology Data Exchange (ETDEWEB)

    Rebak, R B; Payer, J H

    2006-01-10

    Alloy 22 (N06022) was designed to stand the most aggressive industrial applications, including both reducing and oxidizing acids. Even in the most aggressive environments, if the temperature is lower than 150 F (66 C) Alloy 22 would remain in the passive state having particularly low corrosion rates. In multi-ionic solutions that may simulate the behavior of concentrated ground water, even at near boiling temperatures, the corrosion rate of Alloy 22 is only a few nanometers per year because the alloy is in the complete passive state. The corrosion rate of passive Alloy 22 decreases as the time increases. Immersion corrosion testing also show that the newer generation of Ni-Cr-Mo alloys may offer a better corrosion resistance than Alloy 22 only in some highly aggressive conditions such as in hot acids.

  2. Applications of shape memory alloys in Japan

    Energy Technology Data Exchange (ETDEWEB)

    Asai, M.; Suzuki, Y. [Furukawa Electric Co., Ltd., Yokohama, Kanagawa (Japan). R and D Labs.

    2000-07-01

    In Japan, a first application of shape memory TiNi alloy was a moving flap in an air-conditioner which was developed as sensing function of shape memory alloy at Matsushista Electric Industrial Co. Then, shape memory utilized in a coffee maker, an electric rice-cooker, a thermal mixing valve and etc. were commercialized in Japan. And brassiere wires, a guide wire for medical treatment, an antenna for portable telephone and others were commercialized utilizing superelasticity. At the same time with these commercial products, there was not only progress in fabrication technology to effect accurate transformation temperature, but also the discovery of small hysteresis alloy such as R-phase or TiNiCu alloy and low transformation temperature alloy such as TiNiFe, TiNiV and TiNiCo alloys. Therefore the shape memory alloy market has expanded widely to electric appliances, automobile, residence, medical care and otherfield today. (orig.)

  3. Nickel, cobalt, and their alloys

    CERN Document Server

    2000-01-01

    This book is a comprehensive guide to the compositions, properties, processing, performance, and applications of nickel, cobalt, and their alloys. It includes all of the essential information contained in the ASM Handbook series, as well as new or updated coverage in many areas in the nickel, cobalt, and related industries.

  4. Gold color in dental alloys.

    Science.gov (United States)

    Cameron, T

    1997-01-01

    This article will help the dental laboratory with alloy selection by exploring how the relationship among color, ductility and strength applies to gold and how color can be quantified. Because higher quality materials translate into higher profits, upselling to the dentist and patient is also discussed.

  5. Hydrostatic extrusion of magnesium alloys

    NARCIS (Netherlands)

    Sillekens, W.H.; Bohlen, J.

    2012-01-01

    This chapter deals with the capabilities and limitations of the hydrostatic extrusion process for the manufacturing of magnesium alloy sections. Firstly, the process basics for the hydrostatic extrusion of materials in general and of magnesium in particular are introduced. Next, some recent research

  6. Superb nanocrystalline alloys for plating

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    @@ With high rigidity and antiwear performance,nanocrystalline metals and their alloys can find wide applications in surface protection.However, the existence of grain boundaries often leads to erosive micro-batteries which accelerate the process of corrosion.Therefore, it has already become a key issue for surface engineering researchers to find nano materials with higher lubricating, anticorrosion and antiwear capacities.

  7. Microstructure and thermal stability of mechanically alloyed Al3Ti/Al alloy

    Institute of Scientific and Technical Information of China (English)

    林建国; 魏浩岩; 黄正

    2001-01-01

    The microstructure stability of Al3Ti/Al alloy prepared by mechanical alloying (MA) was investigated in the simulating environment in which they may be used. The results show that the MA alloy possesses fine microstructure (the grain size is about 0.5  μm). After cycling loaded followed by heat exposure at 350  ℃ for 24  h, no microstructure coarsening of the alloy occurred, which means that the Al3Ti/Al alloy behaves good microstructure stability at high temperature. The compression yield strength of the alloy reaches up to 247  MPa at 350  ℃.

  8. PERSPECTIVES OF MOLIBDENUM CONTAINING MATERIALS APPLICATION FOR ALLOYING OF IRONCARBON ALLOYS DURING MANUFACTURING OF CRITICAL CASTINGS

    Directory of Open Access Journals (Sweden)

    A. G. Slutsky

    2015-01-01

    Full Text Available Motor is one of most important part of automobile determine its economical effectiveness of usage. On the other hand, sleeves, pistons and rings are crucible parts as they determine the service life of a motor. These parts are producing in big scale – dozens of millions pieces. Increase of cylinder sleeves physical-mechanical properties results in prolongation of motor service life and improvement of motor’s characteristics. Nowadays low alloyed cast irons with perlite structure are used to manufacture motor’s sleeves. For alloying purposes such traditional elements as Cr, Ni, Cu, and V are applied. But it is interesting to use molybdenum for cast iron alloying. It is known that alloying of alloys allows considerable increasing of consumption properties of castings. But in spite of advantages of alloys alloying the increase of molybdenum containing iron-carbon alloys production is restricted by economical reasons – high cost of alloying additions. Expenditures on alloying additions can be reduced by the application cheap secondary alloys in the charge. So, the present paper is devoted to investigation of alloying peculiarities during the treatment of ferrous alloys with molybdenum applying different initial materials.

  9. Method of producing superplastic alloys and superplastic alloys produced by the method

    Science.gov (United States)

    Troeger, Lillianne P. (Inventor); Starke, Jr., Edgar A. (Inventor); Crooks, Roy (Inventor)

    2002-01-01

    A method for producing new superplastic alloys by inducing in an alloy the formation of precipitates having a sufficient size and homogeneous distribution that a sufficiently refined grain structure to produce superplasticity is obtained after subsequent PSN processing. An age-hardenable alloy having at least one dispersoid phase is selected for processing. The alloy is solution heat-treated and cooled to form a supersaturated solid solution. The alloy is plastically deformed sufficiently to form a high-energy defect structure useful for the subsequent heterogeneous nucleation of precipitates. The alloy is then aged, preferably by a multi-stage low and high temperature process, and precipitates are formed at the defect sites. The alloy then is subjected to a PSN process comprising plastically deforming the alloy to provide sufficient strain energy in the alloy to ensure recrystallization, and statically recrystallizing the alloy. A grain structure exhibiting new, fine, equiaxed and uniform grains is produced in the alloy. An exemplary 6xxx alloy of the type capable of being produced by the present invention, and which is useful for aerospace, automotive and other applications, is disclosed and claimed. The process is also suitable for processing any age-hardenable aluminum or other alloy.

  10. Alloy substantially free of dendrites and method of forming the same

    Science.gov (United States)

    de Figueredo, Anacleto M.; Apelian, Diran; Findon, Matt M.; Saddock, Nicholas

    2009-04-07

    Described herein are alloys substantially free of dendrites. A method includes forming an alloy substantially free of dendrites. A superheated alloy is cooled to form a nucleated alloy. The temperature of the nucleated alloy is controlled to prevent the nuclei from melting. The nucleated alloy is mixed to distribute the nuclei throughout the alloy. The nucleated alloy is cooled with nuclei distributed throughout.

  11. Micro-Structures of Hard Coatings Deposited on Titanium Alloys by Laser Alloying Technique

    Science.gov (United States)

    Li, Wei; Yu, Huijun; Chen, Chuanzhong; Wang, Diangang; Weng, Fei

    2013-01-01

    This work is based on micro-structural performance of the Ti-B4C-C laser alloying coatings on Ti-6Al-4V titanium alloy. The test results indicated that laser alloying of the Ti-B4C-C pre-placed powders on the Ti-6Al-4V alloy substrate can form the ceramics reinforced hard alloying coatings, which increased the micro-hardness and wear resistance of substrate. The test result also indicated that the TiB phase was produced in alloying coating, which corresponded to its (101) crystal plane. In addition, yttria has a refining effect on micro-structures of the laser alloying coating, and its refinement mechanism was analyzed. This research provided essential experimental and theoretical basis to promote the applications of the laser alloying technique in manufacturing and repairing of the aerospace parts.

  12. Status of Testing and Characterization of CMS Alloy 617 and Alloy 230

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Weiju [ORNL; Santella, Michael L [ORNL; Battiste, Rick [ORNL; Terry, Totemeier [Idaho National Laboratory (INL); Denis, Clark [Idaho National Laboratory (INL)

    2006-08-01

    Status and progress in testing and characterizing CMS Alloy 617 and Alloy 230 tasks in FY06 at ORNL and INL are described. ORNL research has focused on CMS Alloy 617 development and creep and tensile properties of both alloys. In addition to refurbishing facilities to conduct tests, a significant amount of creep and tensile data on Alloy 230, worth several years of research funds and time, has been located and collected from private enterprise. INL research has focused on the creep-fatigue behavior of standard chemistry Alloy 617 base metal and fusion weldments. Creep-fatigue tests have been performed in air, vacuum, and purified Ar environments at 800 and 1000 C. Initial characterization and high-temperature joining work has also been performed on Alloy 230 and CCA Alloy 617 in preparation for creep-fatigue testing.

  13. Grain refinement of AZ31 magnesium alloy by Al-Ti-C-Y master alloy

    Institute of Scientific and Technical Information of China (English)

    XU Chunxiang; LU Binfeng; L(U) Zhengling; LIANG Wei

    2008-01-01

    Al-Ti-C-Y master alloy was prepared by combining SHS technique and melting-casting method. The microstructure of master alloy and its grain-refining effect on AZ31 alloy were investigated by means of OM, XRD, SEM and EDS. Experimental results indicated that the prepared master alloy consisted of α-Al, TiAl3, TiC and Al3Y phases, and exhibited good grain-refining performance of AZ31 alloy. Morphology of α-Mg changed from coarse dendritic to fine equiaxed and the average grain size of α-Mg matrix reduced from the original 580 to 170 μm after adding 1.0 wt.% master alloy. The grain refining efficiency of Al-Ti-C-Y master alloy on AZ31 alloy was mainly attributed to heterogeneous nucleation of TiC particles and grain growth restriction of Al-Y compound or TiC at grain boundaries.

  14. New Dental Alloys with Special Consumer Properties

    Institute of Scientific and Technical Information of China (English)

    TYKOCHINSKIY D. S.; VASEKIN V. V.

    2012-01-01

    The purpose of the investigation was to create a new gold alloy of yellow for casting the frames of metal-ceramic dentures.The yellow color corresponds to the consumer and aesthetic needs of some patients,because it is a sign of the metal,which is noble and innocuous.The main alloying elements of the majority of gold alloys for metal-ceramics are platinum and palladium,which increase the strength characteristics.Copper,tin,and other precious metals and base metals are also introduced in these alloys.At the same time,it is necessary to ensure the correspondence of the properties of the alloy with those of the ceramics applied onto the metal frame.For this purpose,the thermal expansion coefficient of the alloy (TEC) should be in a range of 13.5~14.5 × 10-6 K-1 when heated from 20 to 600 ℃.The two-component alloys,alloying of gold with platinum and palladium results in a decrease in the TEC,and the introduction of copper,silver,and tin,increases it.Multidirectional influence of the alloying elements is a factor in achieving compliance of the TEC with the given values of the alloy.In multicomponent systems,however,the mutual influence of individual components on the properties of the alloy is unpredictable.This also applies to the color characteristics of the alloys,which vary in the direction of reducing the yellowness with increasing concentration of platinum and palladium,while other elements may have the opposite effect on the results.Yellowness index (YI),calculated according to the results of spectrophotometric studies,has been chosen as an objective indicator of color.In this study,the requirement for YI was given not less than 25; the color of such alloys can be called light yellow.All the alloys investigated contained 85% (by weight)of gold.Therefore,higher corrosion resistance and biological inertness of a finished dental products were ensured.Among the alloys that met the yellowness/TEC requirements,two alloys have been selected that were "most yellow

  15. First principles theory of disordered alloys and alloy phase stability

    Energy Technology Data Exchange (ETDEWEB)

    Stocks, G.M.; Nicholson, D.M.C.; Shelton, W.A. [and others

    1993-06-05

    These lecture notes review the LDA-KKR-CPA method for treating the electronic structure and energetics of random alloys and the MF-CF and GPM theories of ordering and phase stability built on the LDA- KKR-CPA description of the disordered phase. Section 2 lays out the basic LDA-KKR-CPA theory of random alloys and some applications. Section 3 reviews the progress made in understanding specific ordering phenomena in binary solid solutions base on the MF-CF and GPM theories of ordering and phase stability. Examples are Fermi surface nesting, band filling, off diagonal randomness, charge transfer, size difference or local strain fluctuations, magnetic effects; in each case, an attempt is made to link the ordering and the underlying electronic structure of the disordered phase. Section 4 reviews calculations of electronic structure of {beta}-phase Ni{sub c}Al{sub 1-c} alloys using a version of the LDA-KKR-CPA codes generalized to complex lattices.

  16. The Influence of Novel Alloying Additions on the Performance of Magnesium Alloy AZ31B

    Science.gov (United States)

    2013-11-01

    alloys are based on a rather small group of alloying elements, there are often limited differences between them in properties (strength, corrosion ...Research Laboratory (ARL). Initially, the discussions focused on ways to improve the corrosion resistance of magnesium ( Mg ) alloys to increase the...elements display little tendency to alter precipitates or otherwise adversely influence the corrosion performance of the base alloy . Based on these

  17. Bonding theory for metals and alloys

    CERN Document Server

    Wang, Frederick E

    2005-01-01

    Bonding Theory for Metals and Alloys exhorts the potential existence of covalent bonding in metals and alloys. Through the recognition of the covalent bond in coexistence with the 'free' electron band, the book describes and demonstrates how the many experimental observations on metals and alloys can all be reconciled. Subsequently, it shows how the individual view of metals and alloys by physicists, chemists and metallurgists can be unified. The physical phenomena of metals and alloys covered in this book are: Miscibility Gap between two liquid metals; Phase Equilibrium Diagrams; Phenomenon of Melting. Superconductivity; Nitinol; A Metal-Alloy with Memory; Mechanical Properties; Liquid Metal Embrittlement; Superplasticity; Corrosion; The author introduces a new theory based on 'Covalon' conduction, which forms the basis for a new approach to the theory of superconductivity. This new approach not only explains the many observations made on the phenomenon of superconductivity but also makes predictions that ha...

  18. Wetting behavior of alternative solder alloys

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Vianco, P.T.; Hernandez, C.L.; Rejent, J.A.

    1993-07-01

    Recent economic and environmental issues have stimulated interest in solder alloys other than the traditional Sn-Pb eutectic or near eutectic composition. Preliminary evaluations suggest that several of these alloys approach the baseline properties (wetting, mechanical, thermal, and electrical) of the Sn-Pb solders. Final alloy acceptance will require major revisions to existing industrial and military soldering specifications. Bulk alloy and solder joint properties are consequently being investigated to validate their producibility and reliability. The work reported in this paper examines the wetting behavior of several of the more promising commercial alloys on copper substrates. Solder wettability was determined by the meniscometer and wetting balance techniques. The wetting results suggest that several of the alternative solders would satisfy pretinning and surface mount soldering applications. Their use on plated through hole technology might be more difficult since the alloys generally did not spread or flow as well as the 60Sn-40Pb solder.

  19. A lightweight shape-memory magnesium alloy.

    Science.gov (United States)

    Ogawa, Yukiko; Ando, Daisuke; Sutou, Yuji; Koike, Junichi

    2016-07-22

    Shape-memory alloys (SMAs), which display shape recovery upon heating, as well as superelasticity, offer many technological advantages in various applications. Those distinctive behaviors have been observed in many polycrystalline alloy systems such as nickel titantium (TiNi)-, copper-, iron-, nickel-, cobalt-, and Ti-based alloys but not in lightweight alloys such as magnesium (Mg) and aluminum alloys. Here we present a Mg SMA showing superelasticity of 4.4% at -150°C and shape recovery upon heating. The shape-memory properties are caused by reversible martensitic transformation. This Mg alloy includes lightweight scandium, and its density is about 2 grams per cubic centimeter, which is one-third less than that of practical TiNi SMAs. This finding raises the potential for development and application of lightweight SMAs across a number of industries.

  20. Magnetic Characteristics of Two Metglas Alloys

    Science.gov (United States)

    Blatnik, Marie; SNS nEDM Collaboration

    2016-09-01

    Magnetic shielding is gaining greater significance as precision experiments become more sensitive, such as for the Spallation Neutron Source nEDM [neutron electric dipole moment] measurement. Targeting a sensitivity of 10-28 e-cm, the SNS nEDM collaboration minimizes magnetic shield gradients and magnetic noise with a superconducting lead shield and several shield layers that include using a Metglas layer as a primary component. Metglas is a thin ribbon of proprietary engineered alloy that comes in many varieties. One alloy with high (as cast) permeability is Metglas alloy 2705M, which is primarily composed of Cobalt. However, this alloy will activate under neutron radiation and is therefore unsuitable. However, another high-performance Metglas alloy, 2826 MB, contains only trace amounts of Cobalt. A study of the shielding characteristics of the two alloys was performed, paying close attention to field oscillation frequency and magnitude.

  1. Theory of Random Anisotropic Magnetic Alloys

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1976-01-01

    A mean-field-crystal-field theory is developed for random, multicomponent, anisotropic magnetic alloys. It is specially applicable to rare-earth alloys. A discussion is given of multicritical points and phase transitions between various states characterized by order parameters with different...... spatial directions or different ordering wave vectors. Theoretical predictions based on known parameters for the phase diagrams and magnetic moments for the binary rare-earth alloys of Tb, Dy, Ho, and Er, Tb-Tm, Nd-Pr, and pure double-hcp Nd agree qualitatively with the experimental observations....... Quantitative agreement can be obtained by increasing the interaction between different alloy elements, in particular for alloys with very different axial anisotropy, e.g., Tb-Tm. A model system consisting of a singlet-singlet and singlet-doublet alloy is discussed in detail. A simple procedure to include...

  2. Biocorrosion study of titanium-nickel alloys.

    Science.gov (United States)

    Chern Lin, J H; Lo, S J; Ju, C P

    1996-02-01

    The present study provides results of the corrosion behaviour in Hank's physiological solution and some other properties of three Ti-Ni alloys with 18, 25 and 28.4 wt% Ni, respectively. Results indicate that alpha-titanium and Ti2Ni were the two major phases in all three Ti-Ni alloys. The relative amount of the Ti2Ni phase increased with additional Ni content. Hardness of the Ti-Ni alloys also increased with added nickel content, ranging from 310 to 390 VHN, similar to the hardness of enamel. Melting temperatures of the Ti-Ni alloys were all lower than that of pure titanium by least 600 degrees C. The three Ti-Ni alloys behaved almost identically when potentiodynamically polarized in Hank's solution at 37 degrees C. The critical anodic current densities of the alloys were nearly 30 microA/cm2 and the breakdown potentials were all above 1100 mV (SCE).

  3. Spark alloying of VK8 and T15K6 hard alloys

    Science.gov (United States)

    Kuptsov, S. G.; Fominykh, M. V.; Mukhinov, D. V.; Magomedova, R. S.; Nikonenko, E. A.; Pleshchev, V. P.

    2015-08-01

    A method is developed to restore the service properties of VK hard alloy plates using preliminary carburizing followed by spark alloying with a VT1-0 alloy. The phase composition is studied as a function of the spark treatment time.

  4. Kinetics and Structure of Refractory Compounds and AlloysObtained by Mechanical Alloying

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Refractory compounds are material with interesting properties for structural applications. However, the processing of such material is a great challenge because of their high melting temperature and limited ductility. Mechanical alloying is a novel technique of producing refractory compounds with specific properties. Kinetical and structural peculiarities of refractory compounds and alloys obtained by mechanical alloying are discussed.

  5. Alloying Solid Solution Strengthening of Fe-Ga Alloys: A First-Principle Study

    Science.gov (United States)

    2006-01-01

    effect from alloying additions of Nb, Mo, V, Cr and Co in cubic solid solution of Fe-Ga alloys. Mayer bond order "BO" values were used to evaluate the...that transition metal Nb achieves the best strengthening effect in Fe-Ga alloys. The solid solution strengthening follows a trend from larger to

  6. Aspects of precipitation in alloy Inconel 718

    OpenAIRE

    Azadian, Saied

    2004-01-01

    A study was made of the microstructure of the Ni-base alloy Inconel 718 with emphasis on the precipitation and stability of intermetallic phases as affected by heat treatments. In addition the effect of the precipitation on selected mechanical properties namely hardness, creep notch sensitivity and hot ductlity were investigated. The materials studied were a spray-formed version and three wrought versions of the alloy. The spray-formed version of the alloy was of interest since it exhibited a...

  7. Advanced powder metallurgy aluminum alloys and composites

    Science.gov (United States)

    Lisagor, W. B.; Stein, B. A.

    1982-01-01

    The differences between powder and ingot metallurgy processing of aluminum alloys are outlined. The potential payoff in the use of advanced powder metallurgy (PM) aluminum alloys in future transport aircraft is indicated. The national program to bring this technology to commercial fruition and the NASA Langley Research Center role in this program are briefly outlined. Some initial results of research in 2000-series PM alloys and composites that highlight the property improvements possible are given.

  8. Cobalt-Base Alloy Gun Barrel Study

    Science.gov (United States)

    2014-07-01

    are presented in Section 5. 2. Materials and methods The composition of the cobalt -base alloy (CBA) is presented in Table 1. The production of this... Cobalt -Base Alloy Gun Barrel Study by William S. de Rosset and Jonathan S. Montgomery ARL-RP-0491 July 2014 A reprint...21005-5069 ARL-RP-0491 July 2014 Cobalt -Base Alloy Gun Barrel Study William S. de Rosset and Jonathan S. Montgomery Weapons and Materials

  9. Alloy nanoparticle synthesis using ionizing radiation

    Science.gov (United States)

    Nenoff, Tina M.; Powers, Dana A.; Zhang, Zhenyuan

    2011-08-16

    A method of forming stable nanoparticles comprising substantially uniform alloys of metals. A high dose of ionizing radiation is used to generate high concentrations of solvated electrons and optionally radical reducing species that rapidly reduce a mixture of metal ion source species to form alloy nanoparticles. The method can make uniform alloy nanoparticles from normally immiscible metals by overcoming the thermodynamic limitations that would preferentially produce core-shell nanoparticles.

  10. High toughness-high strength iron alloy

    Science.gov (United States)

    Stephens, J. R.; Witzke, W. R. (Inventor)

    1980-01-01

    An iron alloy is provided which exhibits strength and toughness characteristics at cryogenic temperatures. The alloy consists essentially of about 10 to 16 percent by weight nickel, about 0.1 to 1.0 percent by weight aluminum, and 0 to about 3 percent by weight copper, with the balance being essentially iron. The iron alloy is produced by a process which includes cold rolling at room temperature and subsequent heat treatment.

  11. The oxidation and corrosion of ODS alloys

    Science.gov (United States)

    Lowell, Carl E.; Barrett, Charles A.

    1990-01-01

    The oxidation and hot corrosion of high temperature oxide dispersion strengthened (ODS) alloys are reviewed. The environmental resistance of such alloys are classified by oxide growth rate, oxide volatility, oxide spalling, and hot corrosion limitations. Also discussed are environmentally resistant coatings for ODS materials. It is concluded that ODS NiCrAl and FeCrAl alloys are highly oxidation and corrosion resistant and can probably be used uncoated.

  12. Oxidation And Hot Corrosion Of ODS Alloy

    Science.gov (United States)

    Lowell, Carl E.; Barrett, Charles A.

    1993-01-01

    Report reviews oxidation and hot corrosion of oxide-dispersion-strengthened (ODS) alloys, intended for use at high temperatures. Classifies environmental resistances of such alloys by rates of growth of oxides, volatilities of oxides, spalling of oxides, and limitations imposed by hot corrosion. Also discusses environmentally resistant coatings for ODS materials. Concludes ODS NICrAl and FeCrAl alloys highly resistant to oxidation and corrosion and can be used uncoated.

  13. The Fatigue of Powder Metallurgy Alloys.

    Science.gov (United States)

    2014-09-26

    v1o -2- MATERIALS AND TESTS Table 1 provides a complete listing of the alloys studied in this program together with their chemical compositions ...use can minimize material waste and minimize machining costs. In addition there is the potential for the development of more fine-grained and...out under fully reversed loading conditions in the high cycle range with smooth specimens. X7090 and X7091 are P/M alloys, 7075 is an ingot alloy

  14. 冷却方式对硫系玻璃性能的影响%Influence of cooling methods on the properties of chalcogenide glass

    Institute of Scientific and Technical Information of China (English)

    常芳娥; 朱仲飞; 许军锋; 朱满; 坚增运

    2015-01-01

    T he effect of cooling methods on the microstructure ,thermal stability ,optical and mechanical proper‐ties of 99 7.5Ge23 Se67 Sb10‐0 2.5RbI glass were studied by DSC ,XRD ,SEM ,FT‐IR and Vickers hardness test in this study .The results indicated that ,for air cooled glass ,the infrared transmittance at wavelength of 8‐12 μm was above 70% ,which was higher than that of water cooled glass (64% ) .However ,due to the slow cooling rate of air cooled ,the solid solubility of hydrogen in selenium increases ,thus the absorption of impurities was also stronger than that of water cooled glass .For the thermal‐treatment samples ,the diffraction peaks of Sb2 Se3 and GeSe2 crystals can be found at 280 ℃/20 h for the glass cooled by air ,but at 300 ℃/20 h for the glass cooled by water .After thermal treat‐ment ,the fracture toughness of water cooled glass can reach to 0 4.14 MPa・m1/2 ,increased 26% compared with that without thermal treatment ,and it was higher than the maximum KIC (0 3.68 MPa・m1/2 ) of air cooled glass .Conse‐quently ,water cooled chalcogenide glass has a higher stability and a better fracture toughness ,thus it was more suitable for preparing micro‐crystallizing chalcogenide glass .%通过DSC、XRD、SEM、FT‐IR和显微硬度测试等分析手段,研究了冷却方式对99.75Ge23 Se67 Sb10‐02.5RbI玻璃组织、热稳定性以及光学和力学等性能的影响。结果表明,采用空冷制得的试样在8~12μm 波段红外透过率达70%以上,高于水冷试样(64%),但由于空冷冷速慢,氢在硒中的固溶度大,导致杂质吸收也大于水冷试样;空冷试样在280℃热处理20 h可从XRD检测发现明显Sb2 Se3和GeSe2的结晶峰,而水冷试样在300℃热处理20 h后才能检测到结晶峰;经过热处理,水冷试样的最大 K IC值可达到04.14 M Pa・m1/2,较未热处理值提高了26%,且高于空冷试样的最大 K IC (0.368 M Pa・ m1/2),因

  15. Ge-As-S硫系玻璃的结构与性能调控∗%Tailoring structure and prop erty of Ge-As-S chalcogenide glass

    Institute of Scientific and Technical Information of China (English)

    杨艳; 陈云翔; 刘永华; 芮扬; 曹烽燕; 杨安平; 祖成奎; 杨志勇

    2016-01-01

    Chalcogenide glass has been considered to be a promising optical material for infrared (IR) transmission and non-linear optics because of its favorable physical properties such as wide IR transparent windows, high linear and nonlinear refractive indices, and tunable photosensitivity. In many optical designs and practical applications, the refractive index (n) and optical bandgap (Eg) are two important parameters. Aiming to evaluate the composition dependence of the n and Eg in Ge-As-S chalcogenide glasses, a series of glasses with different stoichiometric characteristics are synthesized in quartz tubes under vacuum by the melt quenching technique. The structure, n and Eg of the glass are investigated by Raman spectroscopy, ellipsometry, and diffused reflectance spectroscopy, respectively. To eliminate thermal effects on the measured Raman spectra, the data are corrected by the Bose-Einstein thermal factor. Raman spectrum analyses indicate that Ge-As-S glass has a continuous network structure with interconnected [GeS4] tetrahedra and [AsS3] pyramids forming the backbone. When S amount is excess, S chains or S8 rings emerge. When S amount is deficient, As4S4/As4S3 molecules are formed, and even a large number of As-As/Ge-Ge homopolar bonds appear in the structure. The n values at different wavelengths are obtained by fitting the ellipsometry data with the Sellmeier dispersion model. The values of molar refractivity (Ri) of Ge, As and S elements are evaluated by using the measured n and density (d) of the investigated glass. The optimal values of Ri at 2–10 µm for each element are RGe = 9.83–10.42 cm3/mol, RAs = 11.72–11.87 cm3/mol, and RS = 7.78–7.86 cm3/mol, respectively; and the values decrease with increasing wavelength. The n of Ge-As-S glass is well quantitatively correlated to the d and the Ri of constituent elements, so that its value can be predicted or tailored within 1%deviation. A method to determine reliable Eg of a glass is proposed based on

  16. Temperature dependence of electrical and thermal properties of Te{sub 82.2}Ge{sub 13.22}Si{sub 4.58} glassy alloy

    Energy Technology Data Exchange (ETDEWEB)

    Hegab, N.A.; Fadel, M.; Afifi, M.A.; Shawer, M.F. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2000-09-21

    Thin film and bulk samples were prepared from synthesized amorphous Te{sub 82.2}Ge{sub 13.22}Si{sub 4.58} chalcogenide glassy alloy by the thermal evaporation technique. X-ray analysis shows that both synthesized material and thin film forms have an amorphous nature. The electrical and thermal conductivities for the bulk sample were studied as a function of temperature in a range below T{sub g} (T{sub g}=423 K). The obtained results for electrical conductivity are explained in accordance with the Mott and Davis model. The switching effects in amorphous films were also investigated. The switching phenomenon for this composition was of memory type. The mean value of the threshold voltage V-bar{sub th} was found to increase linearly with increasing film thickness (98.9-250.1 nm), while it decreased exponentially with increasing temperature (below T{sub g}). The results obtained are explained in accordance with the electrothermal model for the switching process. (author)

  17. Optoelectronic behavior of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se): A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Din, Haleem Ud [Department of Physics, Hazara University, Mansehra (Pakistan); Azam, Sikander; Khan, Saleem Ayaz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria)

    2014-12-05

    Highlights: • The Fermi surface and optoelectronic properties for Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) compounds are investigated for the first time. • The electronic band structure calculations reveal a metallic nature for the herein studied compounds. • The bonding nature between different atoms is discussed. • Considerable anisotropy was found between the principal complex tensor components for the two compounds. - Abstract: First principle calculations of electronic, Fermi surface, electronic charge density and optical properties of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) are performed using full potential linear augmented plane wave (FP-LAPW) method within the frame work of density functional theory. Using mBJ method, the electronic band curves overlap at Fermi level and show metallic band structure for both compounds. The calculated densities of states (DOS) spectra show that the valence band is mainly attributed to Rb-p, Pd-d and S-s/p or Se-s/p states; conduction band is mainly attributed to Pd-d, U-f and S-p or Se-p/d states. From the electronic charge density spectrum, it is revealed that a strong covalent bond exists between Pd and S, and Pd or Se while charge transfer between U and S, U and Se, Rb and S, and Rb and Se atoms results in ionic bond nature. It is noted from Fermi surface calculations that both compounds comprise same number of fast velocity electrons but differs in slow or intermediate velocity of electrons. The calculated frequency dependent dielectric function, energy loss function and reflectivity show a considerable anisotropy for both compounds.

  18. Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States); Wiley, John B., E-mail: jwiley@uno.edu [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States)

    2012-06-15

    Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb{sub 2}O{sub 7}, is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb{sub 2}LaNb{sub 2}O{sub 7}. This compound is then reacted at room-temperature with in situ generated H{sub 2}S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb{sub 2}Cl)LaNb{sub 2}O{sub 7} where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S{sup 2−} alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H{sub 2}Se{sub (g)} were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

  19. Deformation Driven Alloying and Transformation

    Science.gov (United States)

    2015-03-03

    Rolling, Acta Materiala (08 2014) Zhe Wang , John H Perepezko, David Larson, David Reinhard. Mixing Behaviors in Cu/Ni and Ni/V Multilayers Induced...by Cold Rolling, Journal of Alloys and Compounds (07 2014) Zhe Wang , John H. Perepezko. Deformation-Induced Nanoscale Mixing Reactions in Cu/Ni...FTE Equivalent: Total Number: Discipline Zhe Wang 0.50 0.50 1 Names of Post Doctorates Names of Faculty Supported Names of Under Graduate students

  20. Titanium alloys Russian aircraft and aerospace applications

    CERN Document Server

    Moiseyev, Valentin N

    2005-01-01

    This text offers previously elusive information on state-of-the-art Russian metallurgic technology of titanium alloys. It details their physical, mechanical, and technological properties, as well as treatments and applications in various branches of modern industry, particularly aircraft and aerospace construction. Titanium Alloys: Russian Aircraft and Aerospace Applications addresses all facets of titanium alloys in aerospace and aviation technology, including specific applications, fundamentals, composition, and properties of commercial alloys. It is useful for all students and researchers interested in the investigation and applications of titanium.

  1. Casting Characteristics of Aluminum Die Casting Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Makhlouf M. Makhlouf; Diran Apelian

    2002-02-05

    The research program investigates the casting characteristics of selected aluminum die casting alloys. Specifically, the alloys' tendencies towards die soldering and sludge formation, and the alloys' fluidity and machinability are evaluated. It was found that: When the Fe and Mn contents of the alloy are low; caution has to be taken against possible die soldering. When the alloy has a high sludge factor, particularly a high level of Fe, measures must be taken to prevent the formation of large hardspots. For this kind of alloy, the Fe content should be kept at its lowest allowable level and the Mn content should be at its highest possible level. If there are problems in die filling, measures other than changing the alloy chemistry need to be considered first. In terms of alloy chemistry, the elements that form high temperature compounds must be kept at their lowest allowable levels. The alloys should not have machining problems when appropriate machining techniques and machining parameters are used.

  2. New aluminium alloys with high lithium content

    Energy Technology Data Exchange (ETDEWEB)

    Schemme, K.; Velten, B.

    1989-06-01

    Since the early 80's there have been made great efforts to replace the high strength aluminium alloys for the aircraft and space industry by a new generation of aluminium-lithium alloys. The attractivity of this kind of alloys could be increased by a further reduction of their density, caused by an increasing lithium content (/ge/ 5 wt.% Li). Therefore binary high-lithium containing alloys with low density are produced and metallografically investigated. A survey of their strength and wear behavior is given by using tensile tests and pin abrasing tests. (orig.).

  3. Design, Selection and Application of High Efficient Complex Alloys

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The design, selection and application principles of complex alloys according to the requirements of making low-alloy steels are di scussed. The designed complex alloys containing calcium, barium, magne sium, strontium, rare earth elements, etc. should not only be able to deoxidize, desulphurize and refine liquid steel, but also alloy it. Th e application principles of alloys are as follows: using Si-Mn or Si-M n-Al alloys for pre-deoxidizing, Si-Al-Ba or Si-Al-Ca-Ba alloys for fi nal deoxidizing and Si-Ca-Ba-Mg(Sr) alloys for refining.

  4. Electrodeposition of engineering alloy coatings

    DEFF Research Database (Denmark)

    Christoffersen, Lasse

    Nickel based electrodeposited alloys were investigated with respect to their deposition process, heat treatment, hardness, corrosion resistance and combined wear-corrosion resistance. The investigated alloys were Ni-B, Ni-P and Ni-W, which are not fully developed for industrial utilisation...... for substitution focussed on were increased deposition rates as well as improved corrosion and wear resistance.Some systems exhibited interesting deposition rates. Examples are 178 µm per hour of Ni-P(6), 85 µm per hour of Ni-P(15), 142 µm per hour of Ni-W(44) and 62 µm per hour of Ni-B(0.8) (weight percentages...... are written in brackets). Temperature and especially pH influenced the cathodic efficiency of the electrodeposition processes for Ni-W and Ni-P. Mass balance problems of the development alloy processes are identified.Heat treatment for one hour at approx. 350°C, 400°C and 600°C of electrodeposited Ni-B, Ni...

  5. Pack cementation coatings for alloys

    Energy Technology Data Exchange (ETDEWEB)

    He, Yi-Rong; Zheng, Minhui; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States)

    1996-08-01

    The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on a Cr-Cr{sub 2}Nb alloy in a single processing step. The morphology and composition of the coating depended both on the composition of the pack and on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi{sub 2} and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. In cyclic and isothermal oxidation in air at 700 and 1050{degrees}C, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation by the formation of a Ge-doped silica film. The codeposition and diffusion of aluminum and chromium into low alloy steel have been achieved using elemental Al and Cr powders and a two-step pack cementation process. Sequential process treatments at 925{degrees}C and 1150{degrees}C yield dense and uniform ferrite coatings, whose compositions are close to either Fe{sub 3}Al or else FeAl plus a lower Cr content, when processed under different conditions. The higher content of Al in the coatings was predicted by thermodynamic calculations of equilibrium in the gas phase. The effect of the particle size of the metal powders on the surface composition of the coating has been studied for various combinations of Al and Cr powders.

  6. Nanodispersed boriding of titanium alloy

    Directory of Open Access Journals (Sweden)

    Kateryna O. Kostyk

    2015-12-01

    Full Text Available The problem of improving the operational reliability of machines is becoming increasingly important due to the increased mechanical, thermal and other loads on the details. There are many surface hardening methods for machines parts which breakdown begins with surface corruption. The most promising methods are chemo-thermal treatment. Aim: The aim of this work is to study the impact of boriding on the structure and properties of titanium alloy. Materials and Methods: The material of this study is VT3-1 titanium alloy. The boriding were conducted using nanodispersed powder blend based on boric substances. Results: It is established that boriding of paste compounds allows obtaining the surface hardness within 30...29 GPa and with declining to 27...26 GPa in layer to the transition zone (with total thickness up to 110 μm owing to changes of the layer phase composition where Ti2B, TiB, TiB2 titanium borides are formed. The increasing of chemical-thermal treatment time from 15 minutes to 2 hours leads to thickening of the borated layer (30...110 µm and transition zone (30...190 µm. Conclusions: Due to usage of nanodispersed boric powder, the boriding duration is decreasing in 2...3 times. This allows saving time and electric energy. The developed optimal mode of boriding the VT3-1 titanium alloy allows obtaining the required operational characteristics and to combine the saturation of the surface layer with atomic boron and hardening.

  7. Data set for diffusion coefficients of alloying elements in dilute Mg alloys from first-principles

    Directory of Open Access Journals (Sweden)

    Bi-Cheng Zhou

    2015-12-01

    Full Text Available Diffusion coefficients of alloying elements in Mg are critical for the development of new Mg alloys for lightweight applications. Here we present the data set of the temperature-dependent dilute tracer diffusion coefficients for 47 substitutional alloying elements in hexagonal closed packed (hcp Mg calculated from first-principles calculations based on density functional theory (DFT by combining transition state theory and an 8-frequency model. Benchmark for the DFT calculations and systematic comparison with experimental diffusion data are also presented. The data set refers to “Diffusion coefficients of alloying elements in dilute Mg alloys: A comprehensive first-principles study” by Zhou et al. [1].

  8. Influence of alloy ingredients on mechanical properties of ternary boride hard alloy clad materials

    Institute of Scientific and Technical Information of China (English)

    LIU Fu-tian; SONG Shi-xue; YANG Jun-ru; HUANG Wei-ling; HUANG Chuan-zhen; CHENG Xin; LI Zhao-qian

    2004-01-01

    Using Mo, B-Fe alloy and Fe powders as raw materials, and adding C, Cr and Ni ingredients, respectively, or C, Cr and Ni mixed powders, ternary boride hard alloy clad materials was prepared on Q235 steel substrate by means of in-situ reaction and vacuum liquid phase sintering technology. The influence of alloy ingredients on the mechanical properties of ternary boride hard alloy clad materials was investigated. The results indicate that a mixture of 0.8% C, 5% Cr and 2% Ni ingredients gives a ternary boride hard alloy clad material with optimal mechanical properties, such as high transverse rupture strength, high hardness and good wear resistance.

  9. Super-flat coherent supercontinuum source in Assub>38.8sub>Sesub>61.2sub> chalcogenide photonic crystal fiber with all-normal dispersion engineering at a very low input energy.

    Science.gov (United States)

    Diouf, Mbaye; Salem, Amine Ben; Cherif, Rim; Saghaei, Hamed; Wague, Ahmadou

    2017-01-10

    We numerically report super-flat coherent mid-infrared supercontinuum (MIR-SC) generation in a chalcogenide Assub>38.8sub>Sesub>61.2sub> photonic crystal fiber (PCF). The dispersion and nonlinear parameters of Assub>38.8sub>Sesub>61.2sub> chalcogenide PCFs by varying the diameter of the air holes are engineered to obtain all-normal dispersion (ANDi) with high nonlinearities. We show that launching low-energy 50 fs optical pulses with 0.88 kW peak power (corresponding to pulse energy of 0.05 nJ) at a central wavelength of 3.7 μm into a 5 cm long ANDi-PCF generates a flat-top coherent MIR-SC spanning from 2900 to 4575 nm with a high spectral flatness of 3 dB. This ultra-wide and flattened spectrum has excellent stability and coherence properties that can be used for MIR applications such as medical diagnosis of diseases, atmospheric pollution monitoring, and drug detection.

  10. Electronic, optical properties and chemical bonding in six novel 1111-like chalcogenide fluorides AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) from first principles calculations

    Science.gov (United States)

    Bannikov, V. V.; Shein, I. R.; Ivanovskii, A. L.

    2012-12-01

    Employing first-principles band structure calculations, we have examined the electronic, optical properties and the peculiarities of the chemical bonding for six newly synthesized layered quaternary 1111-like chalcogenide fluorides SrAgSF, SrAgSeF, SrAgTeF, BaAgSF, BaAgSeF, and SrCuTeF, which are discussed in comparison with some isostructural 1111-like chalcogenide oxides. We found that all of the studied phases AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) are semiconductors for which the fitted “experimental” gaps lie in the interval from 2.23 eV (for SrAgSeF) to 3.07 eV (for SrCuTeF). The near-Fermi states of AMChF are formed exclusively by the valence orbitals of the atoms from the blocks (MCh); thus, these phases belong to the layered materials with “natural multiple quantum wells”. The bonding in these new AMChF phases is described as a high-anisotropic mixture of ionic and covalent contributions, where ionic M-Ch bonds together with covalent M-Ch and Ch-Ch bonds take place inside blocks (MCh), while inside blocks (AF) and between the adjacent blocks (MCh)/(AF) mainly ionic bonds emerge.

  11. Structural, electronic properties and inter-atomic bonding in layered chalcogenide oxides La MChO (where M = Cu, Ag, and Ch = S, Se) from FLAPW-GGA calculations

    Science.gov (United States)

    Bannikov, V. V.; Shein, I. R.; Ivanovskii, A. L.

    2012-01-01

    Using the first principles FLAPW-GGA method, comparative study of structural, electronic properties and of chemical bonding in four 1111-like chalcogenide oxides La MChO (LaCuSO, LaCuSeO, LaAgSO, and LaAgSeO) with ZrCuSiAs-type structure was performed. Our studies showed that: (i) replacements of d metal atoms (Cu ↔ Ag) and chalcogen atoms (S ↔ Se) lead to anisotropic deformations of the crystal structure; this effect is related to strong anisotropy of inter-atomic bonds; (ii) all of the examined chalcogenide oxides are semiconducting; the band gap decreases both at S → Se and Cu → Ag substitutions; and (iii) the bonding in La MChO phases can be classified as a high-anisotropic mixture of ionic and covalent contributions, where mixed covalent-ionic bonds take place inside [La 2O 2] and [ M2Ch2] blocks, whereas between the adjacent [La 2O 2]/[ M2Ch2] blocks, ionic bonds emerge owing to [La 2O 2] → [ M2Ch2] charge transfer. Since the near-Fermi bands of La MChO phases originate mainly from electronic states of [ M2Ch2] blocks, we speculate that chemical substitutions inside these blocks can result in striking differences in electronic properties of these systems; therefore, this approach can be promising for significant enlargement of the functional properties of these materials.

  12. The role of the alkali and chalcogen atoms on the stability of the layered chalcogenide \\mathbf{{{A}_{2}}{{M}^{II}}M_{3}^{\\,IV}{{Q}_{8}}} (A  =  alkali-metal M  =  metal-cations Q  =  chalcogen) compounds: a density functional theory investigation within van der Waals corrections

    Science.gov (United States)

    Besse, Rafael; Da Silva, Juarez L. F.

    2017-01-01

    There is a great interest to design two-dimensional (2D) chalcogenide materials, however, our atomistic understanding of the major physical parameters that drive the formation of 2D or three-dimensional (3D) chalcogenides is far from satisfactory, in particular, for complex quaternary systems. To address this problem, we selected a set of quaternary 2D and 3D chalcogenide compounds, namely, {{\\text{A}}2}\\text{ZnS}{{\\text{n}}3}{{\\text{Q}}8} (A  =  Li, K, Cs; Q  =  S, Se, Te), which were investigated by density functional theory calculations within van der Waals (vdW) corrections. Employing experimental crystal structures and well designed crystal modifications, we found that the average atomic radius of the alkali-metal, A, and chalcogen, Q, species play a crucial role in the stability of the 2D structures. For example, the 2D structures are energetically favored for smaller (R1.8~{\\mathring{\\text{A}}}) average atomic radius, while 3D structures are favored at intermediate average atomic radius. Those results are explained in terms of strain minimization and Coulomb repulsion of the anionic species in the structure framework. Furthermore, the equilibrium lattice parameters are in excellent agreement with experimental results. Thus, the present insights can help in the design of stable quartenary 2D chalcogenide compounds.

  13. Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

    Science.gov (United States)

    Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

    2016-05-03

    A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

  14. Design optimization of shape memory alloy structures

    NARCIS (Netherlands)

    Langelaar, M.

    2006-01-01

    This thesis explores the possibilities of design optimization techniques for designing shape memory alloy structures. Shape memory alloys are materials which, after deformation, can recover their initial shape when heated. This effect can be used for actuation. Emerging applications for shape memory

  15. Zirconium alloys produced by recycling zircaloy tunings

    Energy Technology Data Exchange (ETDEWEB)

    Gamba, N.S. [Instituto de Investigaciones en Catálisis y Petroquímica, INCAPE (FIQ, UNL–CONICET), Santiago del Estero 2829, 3000 Santa Fe (Argentina); Carbajal-Ramos, I.A. [Centro Atómico Bariloche, CNEA e Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 Bariloche (Argentina); Ulla, M.A.; Pierini, B.T. [Instituto de Investigaciones en Catálisis y Petroquímica, INCAPE (FIQ, UNL–CONICET), Santiago del Estero 2829, 3000 Santa Fe (Argentina); Gennari, F.C., E-mail: gennari@cab.cnea.gov.ar [Centro Atómico Bariloche, CNEA e Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 Bariloche (Argentina)

    2013-11-25

    Highlights: •Zr–Ti alloys were successfully produced by two-step procedure. •Zircaloy tunings were used as a valuable source of Zr. •Zircaloy tunings and Ti powders was milled under hydrogen to produce hydride powders. •Hydride powders were decomposed by heating at 900 °C to synthesize the Zr-based alloy. •The procedure could be extended to the production of other Zr-based alloys. -- Abstract: Zircaloy chips were recycled to successfully produce Zr–Ti alloys with bcc structure and different compositions. The procedure developed involves two steps. First, the reactive mechanical alloying (RMA) of the zircaloy tunings and Ti powders was performed to produce metal hydride powders, with a high refinement of the microstructure and a Zr–Ti homogeneous composition. Second, the metal hydride powders were thermally decomposed by heating up to 900 °C to synthesize the Zr-based alloy with a selected composition. The change in the nature of the powders from ductile to brittle during milling avoids both cold working phenomena between the metals and the use of a control agent. A minimum milling time is necessary to produce the solid solution with the selected composition. The microstructure and structure of the final alloys obtained was studied. The present procedure could be extended to the production of Zr-based alloys with the addition of other metals different from Ti.

  16. Alloys of clathrate allotropes for rechargeable batteries

    Science.gov (United States)

    Chan, Candace K; Miller, Michael A; Chan, Kwai S

    2014-12-09

    The present disclosure is directed at an electrode for a battery wherein the electrode comprises clathrate alloys of silicon, germanium or tin. In method form, the present disclosure is directed at methods of forming clathrate alloys of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.

  17. Friction Stir Welding of Aluminum Alloys

    Institute of Scientific and Technical Information of China (English)

    FU Zhi-hong; HE Di-qiu; WANG Hong

    2004-01-01

    Friction stir welding(FSW), a new solid-state welding technology invited in the early 1990s,enables us weld aluminum alloys and titanium alloys etc. The processing of FSW, the microstructure in FSW alloysand the factors influencing weld quality are introduced. The complex factors affecting the properties are researched.

  18. Electroplating Zn-Al Alloy Technology

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The method of controlling separating anode and separating power source was used to perform orthogonal optimization for the parameters in electroplating Zn-Al alloy.The electroplating Zn-Al alloy technology was decided, in which the content of Al is about 12%-15%.

  19. Trends of Chinese RE Hydrogen Storage Alloys

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    @@ Ⅰ . Status of Chinese RE Hydrogen Storage Alloys 1. R εt D of RE Hydrogen Storage Alloys in China AB5 hydrogen storage materials, taking rare earth mischmetals as raw materials, developed rapidly in China in recent years. Today, different countries attach importance to the development and application of the new environmental protection reproducible power sources.

  20. METHOD AND ALLOY FOR BONDING TO ZIRCONIUM

    Science.gov (United States)

    McCuaig, F.D.; Misch, R.D.

    1960-04-19

    A brazing alloy can be used for bonding zirconium and its alloys to other metals, ceramics, and cermets, and consists of 6 to 9 wt.% Ni, 6 to 9 wn~.% Cr, Mo, or W, 0 to 7.5 wt.% Fe, and the balance Zr.