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Sample records for ceos4sb12 121sb nmr

  1. 121Sb-NMR study of filled skutterudite CeOs4Sb12

    International Nuclear Information System (INIS)

    Yogi, M.; Niki, H.; Mukuda, H.; Kitaoka, Y.; Sugawara, H.; Sato, H.

    2007-01-01

    121 Sb nuclear magnetic resonance (NMR) of filled skutterudite compound CeOs 4 Sb 12 has been carried out to investigate a spin fluctuation below T∼25K. In spite of a powdered sample, many sharp peaks, similar to a data for single crystal, were observed because of an orientation of the sample from the anisotropy of the magnetization. A numerical calculation well reproduces resonance fields for Sb(1) sites with H parallel V zz . The nuclear spin-lattice relaxation rate divided by temperature 1/T 1 T shows continuous decrease with increasing magnetic field, indicating a suppression of the spin fluctuation by the field

  2. Crystal structure, magnetism, {sup 89}Y solid state NMR, and {sup 121}Sb Moessbauer spectroscopic investigations of YIrSb

    Energy Technology Data Exchange (ETDEWEB)

    Benndorf, Christopher [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Heletta, Lukas; Block, Theresa; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Eckert, Hellmut [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institute of Physics in Sao Carlos, University of Sao Paulo, Sao Carlos (Brazil)

    2017-02-15

    The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction. Single crystals were obtained by a flux technique with elemental bismuth as an inert solvent. The YIrSb structure (TiNiSi type, space group Pnma) was refined from single-crystal X-ray diffractometer data: a = 711.06(9), b = 447.74(5), c = 784.20(8) pm, wR{sub 2} = 0.0455, 535 F{sup 2} values, 20 variables. {sup 89}Y solid state MAS NMR and {sup 121}Sb Moessbauer spectra show single resonance lines in agreement with single-crystal X-ray data. YIrSb is a Pauli paramagnet. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. NMR studies in the half-Heusler type compound YbPtSb

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, T; Abe, M; Mito, T; Ueda, K; Kohara, T [Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297 (Japan); Suzuki, H S, E-mail: t-koyama@sci.u-hyogo.ac.jp [National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2011-01-01

    {sup 121}Sb and {sup 19B}Pt nuclear magnetic resonance (NMR) has been studied in the half-Heusler type compound YbPtSb to obtain information on local magnetic behavior. The characteristics of the localized 4f spins are observed in the Cuire-Weiss type behavior of the Knight shifts K for both {sup 121}Sb and {sup 19B}Pt. From the slope of K-{sub {chi}} plots we estimated hyperfine coupling constants of -3.8 and -4.6 kOe/{mu}{sub B} at Sb and Pt sites, respectively. It was found that the spin-echo decay rate 1/T{sub 2} of {sup 121}Sb shows a clear peaks at 10 K. Similar tendency was also observed in case of {sup 19B}Pt. However, static properties do not show any anomalies near 10 K.

  4. NMR study of partially filled skutterudites AxCo4Sb12 (A = Yb, Ba, Sr, Ca) and BaxYbyCo4Sb12.

    Science.gov (United States)

    Tian, Yefan; Sirusi, Ali; Ross, Joseph; Ballikaya, Sedat; Uher, Ctirad; Chen, Yuqi; Sekine, Chihiro

    Partially filled Co-Sb skutterudites have been of considerable interest as thermoelectric materials, particularly with multiple filling for which high ZT values can be obtained. This is due in part to control of phonon thermal conductivity, but also the change in composition leads to subtle changes in electronic behavior as well as magnetism due both to rare earth filler atoms and to native defects. We measured 59Co NMR on several partially filled AxCo4Sb12 skutterudites in order to investigate such behavior. From the T-dependent NMR shifts along with T1 relaxation times we can separate metallic shift contributions from those due to local moments. We compare the results to predicted band-edge behavior with multiple minima, and the estimated g factors, by matching this behavior to transport measurements. Also the behavior of Yb-filled samples provides an estimate of the conduction band mediation of the magnetic response, and we also find magnetic shifts in Ba-doped skutterudite which we address in terms of Co mixed-valence behavior. This work was supported by the Robert A. Welch Foundation, Grant No. A-1526. Synthesis work was partly supported by the Center for Solar and Thermal Energy Conversion and a Grant-in-Aid for Scientific Research (B) (No. 23340092) from the Japan Society.

  5. High-spin, multiparticle isomers in 121,123Sb

    International Nuclear Information System (INIS)

    Jones, G. A.; Walker, P. M.; Podolyak, Zs.; Cullen, I. J.; Garnsworthy, A. B.; Liu, Z.; Thompson, N. J.; Williams, S. J.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Khoo, T. L.; Seweryniak, D.; Carroll, J. J.; Chakrawarthy, R. S.; Hackman, G.; Chowdhury, P.; Dracoulis, G. D.; Lane, G. J.; Kondev, F. G.

    2008-01-01

    Isomers in near-spherical Z=51, antimony isotopes are reported here for the first time using fusion-fission reactions between 27 Al and a pulsed 178 Hf beam of energy, 1150 MeV. γ rays were observed from the decay of isomeric states with half-lives, T 1/2 =200(30) and 52(3)μs, and angular momenta I=((25/2)) and I π =(23/2) + , in 121,123 Sb, respectively. These states are proposed to correspond to ν(h (11/2) ) 2 configurations, coupled to an odd d (5/2) or g (7/2) proton. Nanosecond isomers were also identified at I π =(19/2) - [T 1/2 =8.5(5) ns] in 121 Sb and I π =((15/2) - ) [T 1/2 =37(4) ns] in 123 Sb. Information on spins and parities of states in these nuclei was obtained using a combination of angular correlation and intensity-balance measurements. The configurations of states in these nuclei are discussed using a combination of spin/energy systematics and shell-model calculations for neighboring tin isotones and antimony isotopes

  6. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    OpenAIRE

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando

    2001-01-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusio...

  7. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    Science.gov (United States)

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

    2001-05-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

  8. Structural and Electronic Features of Sb-Based Electrode Materials: 121Sb Moessbauer Spectrometry

    International Nuclear Information System (INIS)

    Ionica, C. M.; Aldon, L.; Lippens, P. E.; Morato, F.; Olivier-Fourcade, J.; Jumas, J.-C.

    2004-01-01

    Lithium insertion mechanisms in two antimony based compounds: CoSb 3 and CoSb have been studied by means of 121 Sb Moessbauer spectrometry. Structural and electronic modifications induced by insertion of lithium have been characterised for different depths of discharge. In all cases the insertion mechanisms can be described from several steps. In the first step antimony is partially dispersed in the metallic matrix with amorphisation of the electrode material and in a second step we can observe the alloy forming (Li 3 Sb). However this amorphous alloy remains in interaction with the matrix allowing then a good reversibility.

  9. Alternative synthetic route for the heterometallic CO-releasing [Sb@Rh12(CO27]3− icosahedral carbonyl cluster and synthesis of its new unsaturated [Sb@Rh12(CO24]4− and dimeric [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− derivatives

    Directory of Open Access Journals (Sweden)

    Cristina Femoni

    2016-10-01

    Full Text Available The hetero-metallic [Sb@Rh12(CO27]3− cluster has been known as for over three decades thanks to Vidal and co-workers, and represents the first example of an E-centered (E=heteroatom icosahedral rhodium carbonyl cluster. However, its synthesis required high temperature (140–160 °C and elevated CO pressure (400 atm. Applying the redox condensation method for cluster preparation, we herein report a new synthetic, high-yield route for preparing [Sb@Rh12(CO27]3− under much milder conditions of temperature and pressure. Notably, when the same synthesis was carried out under N2 instead of CO atmosphere, the new isostructural but unsaturated derivative [Sb@Rh12(CO24]4− was obtained, for which we report the full X-ray structural characterization. This species represents one of the few examples of an icosahedral cluster disobeying the electron-counting Wade-Mingos rules, possessing less than the expected 170 cluster valence electrons (CVEs. Judging from IR monitoring, the two species can be obtained one from the other by switching between N2 and CO atmosphere, making [Sb@Rh12(CO27]3− a spontaneous CO-releasing molecule. Finally, the study of the chemical reactivity of [Sb@Rh12(CO27]3− with PPh3 allowed us to obtain the new [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− dimeric compound, for which we herein report the full X-ray structural and 31P NMR analyses.

  10. Magnetic properties of CeyFe4-xNixSb12

    International Nuclear Information System (INIS)

    Viennois, R.; Ravot, D.; Tedenac, J.C.; Charar, S.; Mauger, Alain

    2005-01-01

    The structural and magnetic properties of the metallic skutterudite CeFe 4 Sb 12 have been investigated, with those of Ce y Fe 4-x Ni x Sb z with compositions approaching the relations y=(4-2x)/3, z=12 for which the materials are semiconductors. The large and temperature-dependent contribution of Fe to the magnetic susceptibility of CeFe 4 Sb 12 has been isolated from the Ce contribution, which makes possible a quantitative analysis of the Kondo lattice behavior. In CeFe 4 Sb 12 the Wilson-Sommerfeld ratio is modified by a factor two with respect to former analyses where the magnetic contribution of Fe had been neglected. The main effect of the reduction of the free carrier (hole) concentration in Ce y Fe 4 Sb 12 is to suppress the Kondo effect and the Fe contribution to the magnetic susceptibility. The samples with theoretical hole concentration per unit cell p*=z-8-3y-2x smaller than 0.5 behave like semiconductors in which the exchange between localized Ce 3+ spins is negligible, and are most promising for a potential use as thermoelements

  11. Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

    Directory of Open Access Journals (Sweden)

    Han Li

    2017-12-01

    Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

  12. Excitation functions for 121,123Sb(α,xn), (x=1-4) reactions in approx. 10-40 MeV range

    International Nuclear Information System (INIS)

    Prasad, R.; Bhardwaj, H.D.

    1986-04-01

    Excitation functions for 121 Sb(α,n), 121 Sb(α,2n), 123 Sb(α,n) and 123 Sb(α,3n) reactions in the energy range approx. 10 to 40 MeV have been measured using stacked-foil technique and are calculated theoretically using statistical model with and without the inclusion of pre-equilibrium emission. Inclusion of pre-equilibrium emission is found to give good agreement between the experimental and measured excitation functions. (author)

  13. A 121Sb Moessbauer Study of the Chemical State of Antimony in V-Sb-O Mixed-Oxide Catalysts for the Ammoxidation of Propane

    International Nuclear Information System (INIS)

    Stievano, L.; Wagner, F. E.; Zanthoff, H. W.; Calogero, S.

    2002-01-01

    The structural changes of two representative samples of a group of V-Sb-oxide catalysts, a vanadium-rich and an antimony-rich specimen, are investigated by 121 Sb Moessbauer spectroscopy after treatment under propene or hydrogen at 673 K. The as-prepared catalysts contain both Sb(V) and Sb(III) as crystalline and microcrystalline α-Sb 2 O 4 and VSbO 4 , as well as an additional amorphous V 5+ oxide phase. The oxidation state of antimony does not change upon exposure to propene, whereas a partial reduction can be obtained by a more intense reduction under hydrogen. The Moessbauer results indicate that the antimony in VSbO 4 can be reduced more easily than that in α-Sb 2 O 4 , which appears to be more stable. These results are discussed in view of the observed depletion of vanadium at the surface of the catalyst particles under reaction conditions.

  14. DWPF SB6 Initial CPC Flowsheet Testing SB6-1 TO SB6-4L Tests Of SB6-A And SB6-B Simulants

    International Nuclear Information System (INIS)

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-01-01

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT and QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to ∼1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  15. Fabrication of 121Sb isotopic targets for the study of nuclear high spin features

    Science.gov (United States)

    Devi, K. Rojeeta; Kumar, Suresh; Kumar, Neeraj; Abhilash, S. R.; Kabiraj, D.

    2018-06-01

    Isotopic 121Sb targets with 197Au backing have been prepared by Physical Vapor Deposition (PVD) method using the diffusion pump based coating unit at target laboratory, Inter University Accelerator Centre (IUAC), New Delhi, India. The target thickness was measured by stylus profilo-meter and the purity of the targets was investigated by Energy Dispersive X-ray Analysis (EDXA). One of these targets has been used in an experiment which was performed at IUAC for nuclear structure study through fusion evaporation reaction. The excitation function of the 121Sb(12C, yxnγ) reaction has been performed for energies 58 to 70 MeV in steps of 4 MeV. The experimental results were compared with the calculations of statistical models : PACE4 and CASCADE. The methods adopted to achieve best quality foils and good deposition efficiency are reported in this paper.

  16. Triplet superconductivity in PrOs4Sb12

    International Nuclear Information System (INIS)

    Maki, K.; Won, H.; Parker, David; Haas, Stephan; Izawa, K.; Matsuda, Y.

    2005-01-01

    Here we propose spin triplet superconductors for the A- and B-phase in PrOs 4 Sb 12 . The present model describes consistently the thermal conductivity κ zz data obtained by Izawa et al. for T>=150mK

  17. Effect of laser irradiation on Ag4In12Sb56Te28

    Science.gov (United States)

    Chinnusamy, Rangasami

    2018-04-01

    Ag4In12Sb56Te28 has been synthesized by melt-quench method. Phase homogeneity, crystal structure and effect of laser irradiation have been investigated using X-ray diffraction (XRD) and Raman spectroscopy. Rietveld refinement of crystal structure revealed that Ag4In12Sb56Te28 is a multiphase system with AgIn3Te5, Sb8Te3 and Sb phases. Combined optical microscopy and Raman spectroscopy have been used to understand the distribution of different phases on the surface of the samples, which substantiated the results of Rietveld analysis. Interaction of 20 mW laser beam with samples has been investigated using Raman measurements. The results have shown that regions with large phase fraction of AgIn3Te5 become amorphous during laser-sample interaction, but the starting phase remains nearly same after the interaction. Regions with AgIn3Te5 and nearly equal or larger amount of Sb8Te3 have shown significant growth of α-Sb2O3 during and after laser-sample interaction. Regions rich in Sb have shown formation of AgIn3Te5 and growth of α-Sb2O3 during and after interaction. These observations have been explained based on the maximum temperature rise at different regions during laser-sample interaction.

  18. Effects of FeSb6 octahedral deformations on the electronic structure of LaFe4Sb12

    KAUST Repository

    Pulikkotil, Jiji Thomas Joseph

    2011-09-01

    First-principles density functional based electronic structure calculations are performed in order to clarify the influence of FeSb6 octahedral deformations on the structural and electronic structure properties of LaFe 4Sb12. Our results show that octahedral tiltings correlate with the band dispersions and, consequently, the band masses. While total energy variation points at an enhanced role of lattice anharmonicity, flat bands emerge from a redistribution of the electronic states. © 2011 Elsevier B.V. All rights reserved.

  19. [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}: A designer all-metal aromatic sandwich

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Wen-Juan; You, Xue-Rui [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Guo, Jin-Chang [Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Li, Da-Zhi, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Department of Chemical Engineering, Binzhou University, Binzhou 256603 (China); Wang, Ying-Jin [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Sun, Zhong-Ming [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhai, Hua-Jin, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006 (China)

    2016-07-28

    We report on the computational design of an all-metal aromatic sandwich, [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}. The triple-layered, square-prismatic sandwich complex is the global minimum of the system from Coalescence Kick and Minima Hopping structural searches. Following a standard, qualitative chemical bonding analysis via canonical molecular orbitals, the sandwich complex can be formally described as [Sb{sub 4}]{sup +}[Au{sub 4}]{sup 4−}[Sb{sub 4}]{sup +}, showing ionic bonding characters with electron transfers in between the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers. For an in-depth understanding of the system, one needs to go beyond the above picture. Significant Sb → Au donation and Sb ← Au back-donation occur, redistributing electrons from the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers to the interlayer Sb–Au–Sb edges, which effectively lead to four Sb–Au–Sb three-center two-electron bonds. The complex is a system with 30 valence electrons, excluding the Sb 5s and Au 5d lone-pairs. The two [Sb{sub 4}]{sup +} ligands constitute an unusual three-fold (π and σ) aromatic system with all 22 electrons being delocalized. An energy gap of ∼1.6 eV is predicted for this all-metal sandwich. The complex is a rare example for rational design of cluster compounds and invites forth-coming synthetic efforts.

  20. Resonant photoemission study of CeRu4Sb12

    International Nuclear Information System (INIS)

    Ishii, Hiroyoshi; Miyahara, Tsuneaki; Takayama, Yasuhiro; Shiozawa, Hidetsugu; Obu, Kenji; Matsuda, Tatsuma D.; Aoki, Yuji; Sugawara, Hitoshi; Sato, Hideyuki

    2005-01-01

    We have measured the Ce 4d-4f and Ce 3d-4f resonant photoemission spectra of CeRu 4 Sb 12 . The Ce 4f spectra show the spectral features corresponding to a weakly hybridized system. The number of 4f electrons is estimated to be ∼1.0

  1. Structural, electronic, and thermal properties of indium-filled InxIr4Sb12 skutterudites

    Science.gov (United States)

    Wallace, M. K.; Li, Jun; Subramanian, M. A.

    2018-06-01

    The "phonon-glass/electron-crystal" approach has been implemented through incorporation of "rattlers" into skutterudite void sites to increase phonon scattering and thus increase the thermoelectric efficiency. Indium filled IrSb3 skutterudites are reported for the first time. Polycrystalline samples of InxIr4Sb12 (0 ≤ x ≤ 0.2) were prepared by solid-state reaction under a gas mixture of 5% H2 and 95% Ar. The solubility limit of InxIr4Sb12 was found to be close to 0.18. Synchrotron X-ray diffraction refinements reveal all InxIr4Sb12 phases crystallized in body-centered cubic structure (space group : Im 3 bar) with ∼8% antimony site vacancy and with indium partially occupying the 16f site. Unlike known rattler filled skutterudites, under synthetic conditions employed, indium filling in IrSb3 significantly increases the electrical resistivity and decreases the Seebeck coefficient (n-type) while reducing the thermal conductivity by ∼30%. The resultant power factor offsets the decrease in total thermal conductivity giving rise to a substantial decrease in ZT. Principal thermoelectric properties of InxM4Sb12 (M = Co, Rh, Ir) phases are compared. As iridium is a 5d transition metal, zero field cooled (ZFC) magnetization were performed to unravel the effect of spin-orbit interaction on the electronic properties. These results serve to advance the understanding of filled skutterudites, and provide additional insight on the less explored smaller "rattlers" and their influence on key thermoelectric properties.

  2. The new Zintl phases Eu{sub 21}Cd{sub 4}Sb{sub 18} and Eu{sub 21}Mn{sub 4}Sb{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi; Darone, Gregory M.; Bobev, Svilen, E-mail: bobev@udel.edu

    2016-06-15

    Crystals of two new Zintl compounds, Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} have been synthesized using the molten metal flux method, and their structures have been established by single-crystal X-ray diffraction. Both compounds are isotypic and crystallize in the monoclinic space group C2/m (No. 12, Z=4). The structures are based on edge- and corner-shared MnSb{sub 4} or CdSb{sub 4} tetrahedra, which make octameric [Mn{sub 8}Sb{sub 22}] or [Cd{sub 8}Sb{sub 22}] polyanions. Homoatomic Sb–Sb bonds are present in both structures. The Eu atoms take the role of Eu{sup 2+}cations with seven unpaired 4f electrons, as suggested by the temperature-dependent magnetization measurements. The magnetic susceptibilities of Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} indicate that both phases order anti-ferromagnetically with Néel temperatures of ca. 7 K and ca. 10 K, respectively. The unpaired 3d electrons of the Mn atoms in Eu{sub 21}Mn{sub 4}Sb{sub 18} do contribute to the magnetic response, however, the bulk magnetization measurements do not provide evidence for long-range ordering of the Mn spins down to 5 K. Electrical resistivity measurements suggest that both compounds are narrow band gap semiconductors. - Graphical abstract: Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} have complex monoclinic structures, based on MnSb{sub 4} and CdSb{sub 4} tetrahedra, both edge- and corner-shared. A perspective of the crystal structure is shown, as viewed along the b axis. Display Omitted - Highlights: • Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} are novel compounds in the respective ternary phase diagrams. • For both structures, the Zintl-Klemm rules are followed, and both are small gap semiconductors. • Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} are air-stable Zintl phases and could be new thermoelectric materials.

  3. Tetrahedral 1B4Sb nanoclusters in GaP:(B, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V A, E-mail: elyukhin@cinvestav.m [Departamento de Ingenieria Electrica-SEES, CINVESTAV-IPN, Avenida IPN 2508, Col. San Pedro Zacatenco, C. P. 07360, Mexico, D. F. (Mexico)

    2009-05-01

    Self-assembling conditions of 1B4Sb tetrahedral nanoclusters in GaP doped with boron and Sb isoelectronic impurities are represented in the ultradilute and dilute limits of the boron and Sb contents, respectively. The fulfilled estimates demonstrated the preferential complete or almost complete allocation of boron atoms in 1B4Sb nanoclusters at temperatures of 500 {sup 0}C and 900 {sup 0}C, respectively. The significant decrease of the sum of the free energies of the constituent compounds is the main origin of self-assembling. The reduction of the strain energy is the additional cause of this phenomenon.

  4. 75As-NQR study of the hybridization gap semiconductor CeOs4As12

    International Nuclear Information System (INIS)

    Yogi, M; Niki, H; Higa, N; Kawata, T; Sekine, C

    2016-01-01

    We performed an 75 As nuclear quadrupole resonance (NQR) measurement on CeOs 4 As 12 . The 75 As-NQR spectrum shape demonstrates that the Ce-site filling fraction of our high-pressure synthesized sample is close to unity. A presence of the c — f hybridization gap is confirmed from the temperature dependence of the nuclear spin-lattice relaxation rate 1/T 1 . An increase of 1/T 1 below ∼3 K indicates a development of the spin fluctuations. The 1/T 1 for CeOs 4 As 12 shows similar behavior as that for CeOs 4 Sb 12 with different magnitude of the c — f hybridization gap. An absence of phase transition in CeOs 4 As 12 may be caused by the increase of the c — f hybridization, which increases the gap magnitude and reduces the residual density of state inside the gap. (paper)

  5. Triplet superconductivity in PrOs{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Maki, K. [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Won, H. [Department of Physics, Hallym University Chuncheon 200-702 (Korea, Republic of) ]. E-mail: hkwon@hallym.ac.kr; Parker, David [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Haas, Stephan [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Izawa, K. [Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Matsuda, Y. [Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)

    2005-04-30

    Here we propose spin triplet superconductors for the A- and B-phase in PrOs{sub 4}Sb{sub 12}. The present model describes consistently the thermal conductivity {kappa}{sub zz} data obtained by Izawa et al. for T>=150mK.

  6. Crystalline-electric field of Pr(Os1-xRux)4Sb12

    International Nuclear Information System (INIS)

    Akita, H.; Yoshino, G.; Ochiai, A.

    2006-01-01

    High-quality single crystals of Pr(Os 1-x Ru x ) 4 Sb 12 were grown by the Sb self-flux method. Magnetic susceptibility χ(T) was measured precisely. The characteristic temperature T max , where χ(T) exhibits a maximum, varies as a function of Ru-content x but its functional form changes at around x=0.6 where competition of two types of superconductivity is suggested. Since T max is thought to be relevant to the splitting energy between a ground state and a first excited state, we analyzed χ(T) considering the crystalline electric field (CEF) of the T h symmetry. χ(T) is well fitted assuming a Γ 1 singlet ground state for all x values. As expected from T max , the energy of the first excited state (Γ 4 (2) ) changes its functional form at around x=0.6. Furthermore, the energies of the second and third excited states (Γ 4 (1) and Γ 23 ) exhibit a minimum at almost the same value of x=0.6. These results suggest that the CEF is related to the superconductivity in Pr(Os 1-x Ru x ) 4 Sb 12

  7. Ultrasonic dispersion and off-center rattling in heavy fermion superconductor PrOs4Sb12

    International Nuclear Information System (INIS)

    Nemoto, Yuichi; Ueno, Takafumi; Takeda, Naoya; Yamaguchi, Takashi; Yanagisawa, Tatsuya; Goto, Terutaka; Sugawara, Hitoshi; Sato, Hideyuki

    2006-01-01

    Ultrasonic attenuation measurements have been firstly performed for a large single crystal of PrOs 4 Sb 12 with the dimensions of 5.97x0.6x0.6mm 3 . Remarkable frequency dependence around 20-40K has been observed in the elastic constant and attenuation coefficient of the longitudinal C 11 mode associated with E g symmetry strain in part, which results from a thermally activated off-center rattling with E g symmetry of a Pr ion inside a Sb icosahedron cage. Parameters of a characteristic time τ 0 =3.1x10 -11 s and an activation energy E=225K were obtained. This E g rattling involving a local charge fluctuation inside a Sb cage periodically arranged may couple to the conduction electrons. As a result, the electron-phonon coupling would lead to heavy fermion and its superconductivity in PrOs 4 Sb 12

  8. Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

    Energy Technology Data Exchange (ETDEWEB)

    Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

    1965-10-15

    The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

  9. Photoemission of heavy fermion superconductor PrOs4Sb12 and other Pr compounds

    International Nuclear Information System (INIS)

    Imada, S.; Yamasaki, A.; Sekiyama, A.; Settai, R.; Onuki, Y.; Suga, S.; Sugawara, H.; Sato, H.; Ochiai, A.

    2004-01-01

    Full text: Strongly correlated electronic states due to Pr 4f electrons found in several Pr compounds have recently been attracting much attention. The Pr 4f electrons are much more localized than in Ce due to the lanthanoid contraction. Therefore, the number of the Pr systems that show strong electron correlation is much smaller than Ce systems. We will present a comparative study of Pr 4f electronic states in such systems as the heavy fermion superconductor PrOs 4 Sb 12 , the Kondo system PrSn 3 and the localized 4f systems Pr 4 X 3 (X = Sb and Bi). The Pr 4f electronic state was probed by means of the Pr 3d → 4f resonant photoemission (RPES). Because the kinetic energy (E K ) of the photoelectrons is as high as ∼ 900 eV, this method is much more bulk sensitive than the 4d → 4f RPES with E K ∼ 100 eV. The energy resolution could be set to about 100 meV by utilizing the soft X-rays from BL25SU in SPring-8 and the SCIENTA SES-200 analyzer. The Pr 4f excitation spectrum of PrSn 3 was found to show a very strong intensity at the Fermi level (E F ). This can be interpreted as the Kondo resonance which has been observed in the Kondo Ce and Yb compounds. In the Pr 4f spectrum of the heavy fermion superconductor PrOs 4 Sb 12 , the intensity at E F was smaller than in PrSn 3 . This clearly shows that the Kondo temperature (T K ) is much lower in PrOs 4 Sb 12 than in PrSn 3 . We have further found a strong excitation energy dependence in the RPES line shape. In the case of Pr 4 X 3 (X = Sb and Bi), the intensity at E B was much smaller than PrSn 3 and PrOs 4 Sb 12 , which is consistent with the localized character of Pr 4f electrons in Pr 4 X 3 . The Pr 4f spectra of these localized systems are qualitatively well reproduced by a cluster model calculation that takes into account the hybridization between the Pr 4f orbital and the conduction and valence bands made up by the X p and Pr 5d states

  10. Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

    Directory of Open Access Journals (Sweden)

    Shanshan Yang

    Full Text Available Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1 and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6. SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3 in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6 and R.07007 (Ma1, Ma3, ma5, Ma6 varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3, Ma5, and GHD7/ghd7-1 (Ma6. PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1 these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT, is expressed at low levels in 100 M but at high levels in 58 M (phyB-1 regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner.

  11. Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

    Science.gov (United States)

    Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

    2018-02-12

    The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

  12. Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

    Science.gov (United States)

    Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

    2018-01-08

    The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

  13. Electrical and thermal transport properties of Y bxCo4Sb12 filled skutterudites with ultrahigh carrier concentrations

    Directory of Open Access Journals (Sweden)

    Yulong Li

    2015-11-01

    Full Text Available For filled skutterudites, element Yb is one of the most common and important fillers. However, the optimal carrier concentration range in Y bxCo4Sb12 filled skutterudites has not been determined as a result of the low Yb filling fraction limit. In this study, a non-equilibrium fabrication process (MS-SPS process, consisting of a melt-spinning method and a spark plasma sintering technique, has been applied to prepare Y bxCo4Sb12 samples. The Yb filling fraction is successfully extended to 0.35, which provides the possibility to clarify the optimal carrier concentration range for Yb-filled skutterudites. High carrier concentrations, with a maximum of around 1 × 1021 cm−3, were achieved in the MS-SPS Y bxCo4Sb12 samples due to the significantly enhanced Yb filling fractions. The phase compositions, lattice parameters, electrical and thermal transport properties of the MS-SPS Y bxCo4Sb12 samples with high carrier concentrations were systematically investigated. An optimal carrier concentration range of around 5 ∼ 6 × 1020 cm−3, corresponding to the actual Yb filling fraction of around 0.21∼0.26, has been determined, which displays the highest thermoelectric performance in Y bxCo4Sb12 thermoelectric materials.

  14. Superconductivity and transport properties in LaRu4Sb12 single crystals probed by radiation-induced disordering

    International Nuclear Information System (INIS)

    Goshchitskii, B.; Naumov, S.; Kostromitina, N.; Karkin, A.

    2007-01-01

    Resistivity ρ(T) and Hall coefficient R H (T) in magnetic fields H up to 14 T were studied in superconducting (T c = 3.3 K) LaRu 4 Sb 12 single crystals disordered by fast neutron irradiation. Atomic disordering leads to increase in residual resistivity ρ 0 , decrease of Hall number and suppression of superconductivity. The upper critical field slope -dH c2 /dT increases approximately linear with ρ 0 . The irradiation effects are almost recovered after annealing at 500 deg. C. The observed radiation-induced effects in LaRu 4 Sb 12 are compared with those in PrOs 4 Sb 12 in terms of unconventional mechanisms of superconductivity

  15. Electronic structure and thermoelectricity of filled skutterudite CeRu{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, A., E-mail: amitshan2009@gmail.com [Department of Physics, University of North Bengal, Darjeeling, 734013 (India); Rai, D.P. [Department of Physics, Pachhunga University College, Aizawl, 796001 (India); Sandeep [Condensed Matter Theory Research Group, Department of Physics, Mizoram University, Aizawl, 796004 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 (Algeria); Thapa, R.K. [Condensed Matter Theory Research Group, Department of Physics, Mizoram University, Aizawl, 796004 (India); Mandal, P.K. [Department of Physics, University of North Bengal, Darjeeling, 734013 (India)

    2016-07-05

    First-principles calculations of the energy band structure and density of states of filled skutterudite CeRu{sub 4}Sb{sub 12} have been performed to understand the origin of thermoelectricity. The calculations are carried out using the full potential linear augmented plane wave (FP-LAPW) method within a framework of LDA approach. CeRu{sub 4}Sb{sub 12} is a metal with bands crossing Fermi energy level more than twice with indirect energy band gap of ∼0.09 eV above the Fermi energy level. The study of the elastic properties suggests the ductile nature of the material with covalent contribution in the atomic bonding. Our calculations performed for the density of electronic states near the Fermi energy level show that the large thermo-power at room temperature originates from the hybridized Ru-d and Sb-p orbitals. The study of the thermal transport properties suggests the high value of Seebeck coefficient with figure of merit (ZT) = 0.12, which is consistent to the values obtained for the analogous compounds. - Highlights: • CeRu{sub 4}Sb{sub 12} is ductile material with covalent contribution in bonding. • An indirect energy bandgap of 0.09 eV is present above the Fermi energy level. • The crossing of E{sub F} by the energy bands increases the number of DOS at E{sub F}. • Fermi level is situated within the valence region. • The thermal efficiency of the material is 0.12 at room temperature.

  16. Yield of 117Sb, 118mSb, 120mSb, 122Sb, 124Sb in reactions Sn (p, xn)

    International Nuclear Information System (INIS)

    Dmitriev, P.P.; Konstantinov, I.O.

    1993-01-01

    Yield of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb from thick target depending on proton energy is measured. The maximum proton energy is 21.7±0.2 MeV. Antimony isotopes yield in separate reactions when irradiating of tin isotopes with 100% enrichment is determined using the method published earlier. The methods for production of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb with high radioisotope purity are shown. 13 refs., 1 fig., 3 tabs

  17. Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

    Science.gov (United States)

    Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

    2014-12-01

    We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

  18. Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

    International Nuclear Information System (INIS)

    Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

    2006-01-01

    The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

  19. High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

    International Nuclear Information System (INIS)

    Wu, B.-R.; Liao, C.; Cheng, K. Y.

    2008-01-01

    High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

  20. Evaporation of tetramers in Sb4n clusters and conditions for the formation of Sb2n+1 clusters

    International Nuclear Information System (INIS)

    Rayane, D.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

    1989-01-01

    Antimony clusters are produced by the inert gas condensation technique. They are found to be built from Sb 4 units. The fragmentation by evaporation of Sb 4 units is studied as a function of the excess energy in the cluster. By this way the binding energy of the Sb 4 units in the cluster is found to be about 1.5 eV, well below the binding energy of a Sb atom in the bulk and in Sb 4 (≅3 eV). The evolution of ionization potentials of Sb 4n clusters confirms that their structure is probably non metallic. Finally the possible metastable character of this Sb 4n structure is discussed. (orig.)

  1. Exotic spin phases in the one-dimensional spin-1/2 quantum magnet LiCuSbO{sub 4} as seen by high-field NMR and ESR spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Iakovleva, Margarita [IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Zavoisky Physical Technical Institute, Kazan (Russian Federation); Grafe, Hans-Joachim; Kataev, Vladislav; Alfonsov, Alexey; Sturza, Mihai I.; Wurmehl, Sabine [IFW Dresden, Dresden (Germany); Vavilova, Evgeniia [Zavoisky Physical Technical Institute, Kazan (Russian Federation); Nojiri, Hiroyuki [Institute of Materials Research, Sendai (Japan); Buechner, Bernd [IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany)

    2016-07-01

    We will present our recent results of high-field NMR and sub-THz ESR studies of the quantum magnet LiCuSbO{sub 4} (LCSO) that presents an excellent model system of a one-dimensional spin-1/2 quantum magnet with frustrated exchange interactions. Such networks are predicted to exhibit a plethora of novel ground states beyond classical ferro- or antiferromagnetic phases. In LCSO the absence of a long-range magnetic order down to sub-Kelvin temperatures is suggestive of the realization of a quantum spin liquid state. Our NMR and ESR measurements in strong magnetic fields up to 16 Tesla reveal clear indications for the occurrence of an exotic field-induced hidden phase which we will discuss in terms of multipolar physics.

  2. Crystal structure and bonding characteristics of In-doped β-Zn4Sb3

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Cheng, Sudan; Wei, Ping; Yu, Jian; Zhang, Qingjie

    2012-01-01

    The effects of indium impurity on the crystal structure and bonding characteristics of In-doped β-Zn 4 Sb 3 were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb–In bond, resulting in much low lattice thermal conductivity of 0.49 W −1 K −1 of Zn 4 Sb 2.96 In 0.04 . - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb–Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: ► The indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site. ► The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. ► The binding energy of Sb 3d shifts to low value. ► The charge transfer occurs from In and Zn to Sb.

  3. Study on Stereochemical Activity of Lone Pair Electrons in Sulfur and Halogen Coordinated Antimony(III) Complexes by 121Sb Moessbauer Spectroscopy

    International Nuclear Information System (INIS)

    Ohyama, Ryuhichi; Takahashi, Masashi; Takeda, Masuo

    2005-01-01

    We have measured 121 Sb Moessbauer spectra at 20 K for 52 compounds of antimony(III). An Sb(III) atom with the electron configuration [Kr] 4d 10 5s 2 has a lone pair electrons. The stereochemical property of the lone pair has been found to depend very much on the kinds of atoms surrounding the antimony atom and the configurations of the coordinating atoms.

  4. Topotactic Fluorine Insertion into the Channels of FeSb2O4-Related Materials.

    Science.gov (United States)

    de Laune, Benjamin P; Rees, Gregory J; Marco, José F; Hah, Hien-Yoong; Johnson, Charles E; Johnson, Jacqueline A; Berry, Frank J; Hanna, John V; Greaves, Colin

    2017-08-21

    This paper discusses the fluorination characteristics of phases related to FeSb 2 O 4 , by reporting the results of a detailed study of Mg 0.50 Fe 0.50 Sb 2 O 4 and Co 0.50 Fe 0.50 Sb 2 O 4 . Reaction with fluorine gas at low temperatures (typically 230 °C) results in topotactic insertion of fluorine into the channels, which are an inherent feature of the structure. Neutron powder diffraction and solid state NMR studies show that the interstitial fluoride ions are bonded to antimony within the channel walls to form Sb-F-Sb bridges. To date, these reactions have been observed only when Fe 2+ ions are present within the chains of edge-linked octahedra (FeO 6 in FeSb 2 O 4 ) that form the structural channels. Oxidation of Fe 2+ to Fe 3+ is primarily responsible for balancing the increased negative charge associated with the presence of the fluoride ions within the channels. For the two phases studied, the creation of Fe 3+ ions within the chains of octahedra modify the magnetic exchange interactions to change the ground-state magnetic symmetry to C-type magnetic order in contrast to the A-type order observed for the unfluorinated oxide parents.

  5. Single crystal growth and electrical and magnetic measurements on CeFe4Sb12

    International Nuclear Information System (INIS)

    Mori, I.; Sugawara, H.; Magishi, K.; Saito, T.; Koyama, K.; Kikuchi, D.; Tanaka, K.; Sato, H.

    2007-01-01

    We have succeeded in growing single crystals of CeFe 4 Sb 12 by a Sb-self-flux method and measured the electrical resistivity and magnetization. The residual resistivity is about two times smaller than that of polycrystalline ones, suggesting that the sample quality is highly improved. The magnetization measurements at low temperature revealed that the sample contains almost no magnetic impurities which are always observed in polycrystalline samples. The weak temperature dependence and a broad maximum around 115K in magnetic susceptibility, which is a typical feature of valence fluctuation compounds, have been observed

  6. Preparation and thermoelectric properties of p-Type PrzFe4-xCoxSb12 skutterudites

    International Nuclear Information System (INIS)

    Shin, Dong-Kil; Kim, Il-Ho

    2014-01-01

    p-Type Pr z Fe 4-x Co x Sb 12 (z = 0.8, 1.0 and x = 0, 0.5, 1.0) skutterudites were synthesized by encapsulated melting and annealing and were consolidated with hot pressing. The effects of Pr filling and Co substitution for Fe (charge compensation) on the transport and the thermoelectric properties were examined. A few secondary phases, such as Sb and FeSb 2 , were formed together with the skutterudite phase, but the formation was suppressed with increasing Pr and Co contents. We confirmed that Pr filled in the voids and that Co was substituted for Fe in all specimens because the lattice constant increased with increasing Pr content and decreased with increasing Co content. The electrical conductivity decreased slightly with increasing temperature, showing degenerate semiconductor characteristics. The Hall and the Seebeck coefficients showed positive signs, indicating that the major carriers were holes (p-type conduction). The electrical conductivity and the thermal conductivity were decreased due to a decrease in the carrier concentration with increasing Pr and Co contents. As a result, the dimensionless figure of merit, ZT, was improved by Pr filling and Co substitution, and a maximum ZT = 0.89 was obtained at 723 K for Pr 0.8 Fe 3 CoSb 12 .

  7. Raman spectra of the system TeCl4-SbCl5

    International Nuclear Information System (INIS)

    Brockner, W.; Demiray, A.F.

    1980-01-01

    Raman spectra of the solid and molten TeCl 4 . SbCl 5 addition compound and of some TeCl 4 -SbCl 5 mixtures have been recorded. Two modifications of the crystalline TeCl 4 -SbCl 5 compound have been found. The structure of the melt can be described by the equilibrium TeCl 3 + + SbCl 6 - reversible TeCl 4 + SbCl 5 lying on the left side. Mixtures with other stoichiometry contain the 1:1 adduct only and excess TeCl 4 or SbCl 5 , respectively. Such melts are built up by the ionic species TeCl 3 + and SbCl 6 - also and TeCl 4 or SbCl 5 according to stoichiometry. (author)

  8. Adducts of UF5 with SbF5 and structure of UF5 . 2SbF5

    International Nuclear Information System (INIS)

    Sawodny, W.; Rediess, K.

    1980-01-01

    Both α-UF 5 and β-UF 5 form only a 1:2 compound UF 5 . 2SbF 5 reacting directly with SbF 5 , from which UF 5 . SbF 5 can be obtained by thermal decomposition. UF 5 . 2SbF 5 crystallizes in the monoclinic space group P2 1 /c with the following lattice constants a = 8.110(4), b = 14.129(6), c = 10.032(6) A and β = 96.97(5) 0 ; Z = 4. An X-ray study shows centrosymmetric four-membered rings of alternating UF 8 and SbF 6 polyhedra connected by other SbF 6 entities. This structure is similar to that of UOF 5 . 2SbF 5 , but the distorted pentagonal-bipyramidal coordination of the U atom found there is increased to a dodecahedral coordination by an additional U-F-Sb bridge, though with a somewaht larger UF distance. (author)

  9. Thermoelectric and mechanical properties of spark plasma sintered Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}: Promising thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, Materials Physics and Engineering, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

    2014-12-29

    We report the synthesis of thermoelectric compounds, Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu{sub 3}SbSe{sub 4} exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu{sub 3}SbSe{sub 3}, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu{sub 3}SbSe{sub 4} was found to be ∼1.2 as compared to 0.2 V{sup −1} for Cu{sub 3}SbSe{sub 3} at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

  10. Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

    International Nuclear Information System (INIS)

    Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

    2011-01-01

    Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

  11. Electronic and Transport Properties of LaNi4Sb12 Skutterudite: Modified Becke-Johnson Approach

    Science.gov (United States)

    Bhat, Tahir Mohiuddin; Singh, Srishti; Gupta, Dinesh C.

    2018-05-01

    We carried out an ab initio study of structural, electronic, thermodynamic, and thermoelectric properties of the lanthanum-filled skutterudite, LaNi4Sb12. Generalized gradient approximation and modified Becke-Johnson potentials were employed for the exchange-correlation potential. The electronic structure calculations display the metallic behavior of the compound. The alloy offers low lattice thermal conductivity along with a high Seebeck coefficient with a value of - 158 (μVK-1) at room temperature. The effect of high pressure and temperature on thermal properties like thermal expansion coefficient, heat capacity, and Grüneisen parameter are also investigated by means of a quasi-harmonic Debye model. The large Seebeck coefficient and high power factor exhibited by LaNi4Sb12 make it an attractive candidate for thermoelectric materials.

  12. Structural transitions, ion mobility, and conductivity in CsSbF3(H2PO4)

    Science.gov (United States)

    Kavun, V. Ya.; Uvarov, N. F.; Slobodyuk, A. B.; Ulihin, A. S.; Kovaleva, E. V.; Zemnukhova, L. A.

    2018-02-01

    Structural transitions, ion mobility, and conductivity in CsSbF3(H2PO4) (I) have been investigated by the methods of 1H, 19F, 31P NMR (including 1H, 19F, 31P MAS NMR), DSC, X-ray diffraction, and impedance spectroscopy. It was found that the fundamental changes in 1H, 19F, 31P NMR spectra (above 390 K) were associated with the formation of a crystalline disorder phase I with high ionic mobility in the proton and fluoride sublattices, as a result of a phase transition in the 400-420 K range. In the same temperature range, the transition of PO2(OH)2- anions from the "rigid lattice" to fast reorientations takes place. Above 430 K, there occurs a transition from the crystalline disordered phase to the amorphous one. The types of ion mobility in CsSbF3(H2PO4) and its amorphous phase have been established and temperature ranges of their realization have been determined (150-450 K). According to the NMR data, the diffusion in the proton sublattice of the disordered crystalline and amorphous phases is preserved even at room temperature. The ionic conductivity in CsSbF3(H2PO4) reaches the values of 2.6 × 10-4 S/cm in the temperature range 410-425 K and decreases down to 2.0 × 10-5 S/cm upon transition to the amorphous phase (435-445 K).

  13. High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

    Energy Technology Data Exchange (ETDEWEB)

    Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Bourgès, Cédric; Barbier, Tristan [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France); Nassif, Vivian [CNRS Institut NEEL, F-38000 Grenoble (France); Université de Grenoble Alpes, Institut NEEL, F-38000 Grenoble (France); Cordier, Stéphane [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Guilmeau, Emmanuel [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France)

    2017-03-15

    Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.

  14. Neutron scattering study of Ce3Au3Sb4

    International Nuclear Information System (INIS)

    Kasaya, Mitsuo; Katoh, Kenichi; Kohgi, Masahumi; Osakabe, Toyotaka

    1993-01-01

    Rare-earth compounds with an Y 3 Au 3 Sb 4 -type crystal structure are semiconductors or semi-metals. Among them, Ce 3 Au 3 Sb 4 is a semiconductor with an activation energy of about 640 K and shows no magnetic order down to 1.5 K. The magnetic part of the specific heat for Ce 3 Au 3 Sb 4 obtained by subtracting the value for La 3 Au 3 Sb 4 from the total specific heat of Ce 3 Au 3 Sb 4 shows a broad peak at around 10 K, the origin of which is well explained by the crystalline-field splitting determined by neutron scattering. (author)

  15. Thermoelectric properties of In{sub 0.2}Co{sub 4}Sb{sub 12} skutterudites with embedded PbTe or ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Chubilleau, C.; Lenoir, B.; Candolfi, C.; Masschelein, P. [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Dauscher, A., E-mail: anne.dauscher@univ-lorraine.fr [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Guilmeau, E. [Laboratoire CRISMAT, UMR 6508, 6 boulevard Maréchal Juin, 14050 Caen Cedex (France); Godart, C. [ICMPE-CMTR, CNRS-UMR 7182, 2-8 rue H. Dunant, 94320 Thiais (France)

    2014-03-15

    Highlights: • Fabrication of nanostructured skutterudites ZnO or PbTe/In{sub 0.2}Co{sub 4}Sb{sub 12.} • Thermal conductivity modeling accounts for experimental results. • Greater lattice thermal conductivity decrease in In{sub 0.2}Co{sub 4}Sb{sub 12} than in CoSb{sub 3}. • A max ZT of 1.05 is obtained at 700 K in a 2 wt% ZnO-containing sample. -- Abstract: Transport properties of the skutterudite compound In{sub 0.2}Co{sub 4}Sb{sub 12} containing ZnO or PbTe nano-sized particles (2–12 wt%) were investigated by means of electrical resistivity, thermopower and thermal conductivity between 5 and 800 K. The composite powders were prepared by freeze-drying the nanoparticles with micron-sized In{sub 0.2}Co{sub 4}Sb{sub 12} powders. Densification was achieved by spark plasma sintering. All composites were characterized by X-ray powder diffraction and scanning electron microscopy. All the transport coefficients show similar temperature dependences suggesting little influence of the nature, semiconducting or insulating, of the nanoparticles. Both the electrical and the thermal conductivities decrease with increasing the PbTe or ZnO content. The impact of ZnO and PbTe on the thermal conductivity was modelled based on the Debye model taking into account a relaxation time constant reflecting phonon scattering by spherical nanoparticles. A maximum dimensionless figure of merit ZT of 1.05 at 700 K was achieved in a sample containing 2 wt% ZnO, a value quite similar to that of the reference In{sub 0.2}Co{sub 4}Sb{sub 12} compound.

  16. Transport and magnetic properties of CezLa1-zFe4Sb12

    International Nuclear Information System (INIS)

    Viennois, R; Charar, S; Ravot, D; Mauger, A; Haen, P; Tedenac, J C

    2006-01-01

    Transport and magnetic properties of Ce z La 1-z Fe 4 Sb 12 have been investigated in the whole range of substitution 0 Ce to the resistivity goes through a maximum at temperature ∼ 140K, close to the spin fluctuation temperature T sf for CeFe 4 Sb 12 . T sf is the single magnetic energy scale which accounts for the magnetic properties of the Ce Kondo lattice. At low temperature, the resistivity shows a T 2 -deviation from saturation. At z≤0.7 this is the behaviour expected for Ce impurities in metals in the Kondo limit. At z = 1, however, Hall effect measurements show that this behaviour is due to a decrease of the free carrier concentration which we can attribute to the formation of a hybridization pseudogap E g ∼ 25 meV. Upon dilution of the cerium, E g decreases and this pseudogap is smeared out, replaced by the Kondo resonance at the Fermi level characteristic of Kondo impurities in the small z limit

  17. Neutron diffraction and thermoelectric properties of indium filled In{sub x}Co{sub 4}Sb{sub 12} (x = 0.05, 0.2) and indium cerium filled Ce{sub 0.05}In{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Sesselmann, Andreas [Institute of Materials Research, German Aerospace Center (DLR), Linder Hoehe, 51147 Koeln (Germany); Klobes, Benedikt [Juelich Centre for Neutron Science JCNS und Peter Gruenberg Institute PGI, JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Dasgupta, Titas [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai (India); Gourdon, Olivier [Los Alamos National Laboratory, LANSCE, Los Alamos, New Mexico 87545 (United States); Hermann, Raphael [Juelich Centre for Neutron Science JCNS und Peter Gruenberg Institute PGI, JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Faculte des Sciences, Universite de Liege, 4000 Liege (Belgium); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Mueller, Eckhard [Institute of Materials Research, German Aerospace Center (DLR), Linder Hoehe, 51147 Koeln (Germany); Institute of Inorganic and Analytical Chemistry, Justus Liebig University, Heinrich-Buff-Ring 58, 35392 Giessen (Germany)

    2016-03-15

    The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions In{sub x}Co{sub 4}Sb{sub 12} (x = 0.05, 0.2) and Ce{sub 0.05}In{sub 0.1}Co{sub 4}Sb{sub 12} as a function of temperature (12-300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost during synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. In our experiments, the double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass. Furthermore, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

    International Nuclear Information System (INIS)

    Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

    2006-01-01

    Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

  19. Long-range order in InAsSb

    Science.gov (United States)

    Jen, H. R.; Ma, K. Y.; Stringfellow, G. B.

    1989-03-01

    Results are presented of transmission electron diffraction (TED) observations, demonstrating, for the first time, a CuPt-type ordering in InAs(1-x)Sb(x) alloys, over a wide range of x values (from x = 0.22 to 0.88). The InAsSb alloys were prepared by OMVPE on (001) oriented undoped InSb or InAs substrates. The ordering-induced spots on the TED patterns show the highest intensity for x of about 0.5 and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas, the degree of order for these two variants, 1/2(-1 1 1) and 1/2(1 -1 1), is equal, and in other areas, one variant dominates.

  20. Lead-free Perovskite Materials (NH4 )3 Sb2 Ix Br9-x.

    Science.gov (United States)

    Zuo, Chuantian; Ding, Liming

    2017-06-01

    A family of perovskite light absorbers (NH 4 ) 3 Sb 2 I x Br 9-x (0≤x≤9) was prepared. These materials show good solubility in ethanol, a low-cost, hypotoxic, and environmentally friendly solvent. The light absorption of (NH 4 ) 3 Sb 2 I x Br 9-x films can be tuned by adjusting I and Br content. The absorption onset for (NH 4 ) 3 Sb 2 I x Br 9-x films changes from 558 nm to 453 nm as x changes from 9 to 0. (NH 4 ) 3 Sb 2 I 9 single crystals were prepared, exhibiting a hole mobility of 4.8 cm 2  V -1  s -1 and an electron mobility of 12.3 cm 2  V -1  s -1 . (NH 4 ) 3 Sb 2 I 9 solar cells gave an open-circuit voltage of 1.03 V and a power conversion efficiency of 0.51 %. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Three-Dimensional Reduced Graphene Oxide Coupled with Mn3O4 for Highly Efficient Removal of Sb(III) and Sb(V) from Water.

    Science.gov (United States)

    Zou, Jian-Ping; Liu, Hui-Long; Luo, Jinming; Xing, Qiu-Ju; Du, Hong-Mei; Jiang, Xun-Heng; Luo, Xu-Biao; Luo, Sheng-Lian; Suib, Steven L

    2016-07-20

    Highly porous, three-dimensional (3D) nanostructured composite adsorbents of reduced graphene oxides/Mn3O4 (RGO/Mn3O4) were fabricated by a facile method of a combination of reflux condensation and solvothermal reactions and systemically characterized. The as-prepared RGO/Mn3O4 possesses a mesoporous 3D structure, in which Mn3O4 nanoparticles are uniformly deposited on the surface of the reduced graphene oxide. The adsorption properties of RGO/Mn3O4 to antimonite (Sb(III)) and antimonate (Sb(V)) were investigated using batch experiments of adsorption isotherms and kinetics. Experimental results show that the RGO/Mn3O4 composite has fast liquid transport and superior adsorption capacity toward antimony (Sb) species in comparison to six recent adsorbents reported in the literature and summarized in a table in this paper. Theoretical maximum adsorption capacities of RGO/Mn3O4 toward Sb(III) and Sb(V) are 151.84 and 105.50 mg/g, respectively, modeled by Langmuir isotherms. The application of RGO/Mn3O4 was demonstrated by using drinking water spiked with Sb (320 μg/L). Fixed-bed column adsorption experiments indicate that the effective breakthrough volumes were 859 and 633 mL bed volumes (BVs) for the Sb(III) and Sb(V), respectively, until the maximum contaminant level of 5 ppb was reached, which is below the maximum limits allowed in drinking water according to the most stringent regulations. The advantages of being nontoxic, highly stable, and resistant to acid and alkali and having high adsorption capacity toward Sb(III) and Sb(V) confirm the great potential application of RGO/Mn3O4 in Sb-spiked water treatment.

  2. Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

    Science.gov (United States)

    Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-08-16

    A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

  3. Photoinduced second harmonic generation of LaFe4Sb12near spin fluctuated critical points

    International Nuclear Information System (INIS)

    Nouneh, K.; Viennois, R.; Kityk, I.V.; Terki, F.; Charar, S.; Benet, S.; Paschen, S.

    2004-01-01

    The temperature dependence of the resistivity, the Seebeck coefficient and photoinduced second harmonic generation (PISHG) are studied near the quantum critical point in the skutterudite compound LaFe 4 Sb 12 , possessing increased spin fluctuations. We observed a large maximum of the PISHG at a temperature of about 15 K. The PISHG signal increases substantially below 35 K. We found a correlation between the temperature dependences of PISHG, resistivity and Seebeck coefficient. We proposed a phenomenological explanation for the occurrence of the PISHG signal in LaFe 4 Sb 12 implying strong spin fluctuations exist in this system, which may present some interest for the study of other spin fluctuation systems. Physical insight into the phenomenon observed is grounded in the participation of anharmonic electron-phonon and electron-paramagnon interactions stimulated by inducing light in the interactions with the photoexcited dipole moments. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Structure and Chemical Bond of Thermoelectric Ce-Co-Sb Skutterudites

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The correlations among composition,structure,chemical bond and thermoelectric property of skutterudites CoSb3 and CeCo5Fe3Sb12 have been studied by using density function and discrete variation (DFT-DVM) method.Three models for this study were proposed and calculated by which the "rattling" pattern was described.Model 1 is with Ce in the center,model 2 is with Ce away the center and near to Sb,and model 3 is also with Ce away the center but near to Fe.The calculated results show that in model 3,the ionic bond is the strongest,but the covalent bond is the weakest.Due to the different changes between ionic and covalent bond,there is less difference in the stability among the models 1,2 and 3.Therefore,these different models can exist at the same time,or can translate from one to another more easily.In other words,the "rattling" pattern has taken place.Unfilled model of CoSb3,without Ce and Fe,is called model 4.The covalent bond of Co-Sb or Fe-Sb in models 1,2 and 3 is weaker than that of Co-Sb in model 4,as some electrical cloud of Sb takes part in the covalent bond of Ce-Sb in the filled models.The result is consistent with the experimental result that the thermal conductivity of CeCo5Fe3Sb12 is lower than that of CoSb3,and the thermoelectric property of CeCo5Fe3Sb12 is superior to that of CoSb3.

  5. Local structure investigation of Ga and Yb dopants in Co4Sb12 skutterudites

    Science.gov (United States)

    Hu, Yanyun; Chen, Ning; Clancy, J. P.; Salvador, James R.; Kim, Chang-Yong; Shi, Xiaoya; Li, Qiang; Kim, Young-June

    2017-12-01

    We report comprehensive x-ray absorption spectroscopy studies at both the Ga K edge and Yb L2 edge to elucidate the local structure of Ga and Yb dopants in YbxGayCo4Sb12 . Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24 g site replacing Sb, and the other is the 2 a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2 a on-center site. At low concentrations of Yb, Ga24 g and Ga2 a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Funct. Mater. 23, 3194 (2013), 10.1002/adfm.201202571]. The Ga24 g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24 g site for the highest Yb concentration studied (x =0.4 ). In addition to the local structural evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K -edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga2 a to Ga24 g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co4Sb12 skutterudites is due to the increased Ga24 g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.

  6. High field Moessbauer and magnetic investigations of Pr0.73Fe4Sb12

    International Nuclear Information System (INIS)

    Reissner, Michael; Bauer, Ernst; Steiner, Walter; Rogl, Peter

    2004-01-01

    In accordance with the filling factor determined by X-ray investigations two Fe sites were identified in the in-field 57 Fe Moessbauer spectra. The derived internal fields at 4.2 K were small (0.35 and 1.45 T at external fields of 13.5 T), whereas from magnetic measurements μ eff ∼2.7 μ B was estimated for the Fe 4 Sb 12 -sublattice

  7. Effects upon metabolic pathways and energy production by Sb(III and As(III/Sb(III-oxidase gene aioA in Agrobacterium tumefaciens GW4.

    Directory of Open Access Journals (Sweden)

    Jingxin Li

    Full Text Available Agrobacterium tumefaciens GW4 is a heterotrophic arsenite [As(III]/antimonite [Sb(III]-oxidizing strain. The As(III oxidase AioAB is responsible for As(III oxidation in the periplasm and it is also involved in Sb(III oxidation in Agrobacterium tumefaciens 5A. In addition, Sb(III oxidase AnoA and cellular H2O2 are also responsible for Sb(III oxidation in strain GW4. However, the deletion of aioA increased the Sb(III oxidation efficiency in strain GW4. In the present study, we found that the cell mobility to Sb(III, ATP and NADH contents and heat release were also increased by Sb(III and more significantly in the aioA mutant. Proteomics and transcriptional analyses showed that proteins/genes involved in Sb(III oxidation and resistance, stress responses, carbon metabolism, cell mobility, phosphonate and phosphinate metabolism, and amino acid and nucleotide metabolism were induced by Sb(III and were more significantly induced in the aioA mutant. The results suggested that Sb(III oxidation may produce energy. In addition, without periplasmic AioAB, more Sb(III would enter bacterial cells, however, the cytoplasmic AnoA and the oxidative stress response proteins were significantly up-regulated, which may contribute to the increased Sb(III oxidation efficiency. Moreover, the carbon metabolism was also activated to generate more energy against Sb(III stress. The generated energy may be used in Sb transportation, DNA repair, amino acid synthesis, and cell mobility, and may be released in the form of heat.

  8. Density functional simulations of Sb-rich GeSbTe phase change alloys

    OpenAIRE

    Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1Sb 1Te 1 and Ge 2Sb 4Te 5. Comparison with previous results on the most studied Ge 2Sb 2Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high fr...

  9. Possible quadrupolar nematic phase in the frustrated spin chain LiCuSbO4: An NMR investigation

    Science.gov (United States)

    Bosiočić, M.; Bert, F.; Dutton, S. E.; Cava, R. J.; Baker, P. J.; Požek, M.; Mendels, P.

    2017-12-01

    The frustrated one-dimensional quantum magnet LiCuSbO4 is a rare realization of the J1-J2 spin chain model with an easily accessible saturation field, formerly estimated at 12 T. Exotic multipolar nematic phases were theoretically predicted in such compounds just below the saturation field, but without unambiguous experimental observation so far. In this paper we present extensive experimental research on the compound in a wide temperature (30 mK to 300 K) and field (0-13.3 T) range by muon spin rotation (μ SR ), 7Li nuclear magnetic resonance (NMR), and magnetic susceptibility (SQUID). μ SR experiments in zero magnetic field demonstrate the absence of long-range 3D ordering down to 30 mK. Together with former heat capacity data [Dutton et al., Phys. Rev. Lett. 108, 187206 (2012), 10.1103/PhysRevLett.108.187206], magnetic susceptibility measurements suggest a short-range-correlated vector chiral phase in the field range 0-4 T. At the intermediate-field values (5-12 T), the system enters a 3D-ordered spin density wave phase with 0.75 μB per copper site at lowest temperatures (125 mK), estimated by NMR. At still higher field, the magnetization is found to be saturated above 13 T where the spin lattice T1-1 relaxation reveals a spin gap estimated at 3.2(2) K. We narrow down the possibility of observing a multipolar nematic phase to the range 12.5-13 T.

  10. Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

    International Nuclear Information System (INIS)

    Arpapay, B.; Şahin, S.; Arıkan, B.; Serincan, U.

    2014-01-01

    The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10 −4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

  11. Density functional simulations of Sb-rich GeSbTe phase change alloys

    International Nuclear Information System (INIS)

    Gabardi, S; Bernasconi, M; Caravati, S; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1 Sb 1 Te 1 and Ge 2 Sb 4 Te 5 . Comparison with previous results on the most studied Ge 2 Sb 2 Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm -1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge 2 Sb 2 Te 5 . All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  12. Density functional simulations of Sb-rich GeSbTe phase change alloys

    Science.gov (United States)

    Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

    2012-09-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  13. Are Sb4n (n>1) clusters weakly interacting tetrahedra?

    International Nuclear Information System (INIS)

    Kumar, V.

    1993-03-01

    The electronic and atomic structure of Sb 4 and Sb 8 clusters is studied using the ab-initio molecular dynamics method in the local density approximation. While for Sb 4 we obtain a regular tetrahedron to be about 2.0 eV lower in energy than a bent rhombus, for Sb 8 two structures, (1) two weakly interaction tetrahedra and (2) a bent rhombus interacting with a stretched tetrahedron, obtained from the simulated annealing lie only within about 0.1 eV indicating the importance of the bent rhombus structure for larger clusters. As compared to two isolated tetrahedra, the binding energy of Sb 8 is about 0.5 eV. Our results are thus in excellent agreement with the experimental data which show predominantly the abundance of tetramers above room temperature. (author). 18 refs, 5 figs, 1 tab

  14. Zr3NiSb7: a new antimony-enriched ZrSb2 derivative

    Directory of Open Access Journals (Sweden)

    V. Romaka

    2008-08-01

    Full Text Available Single crystals of trizirconium nickel heptaantimonide were synthesized from the constituent elements by arc-melting. The compound crystallizes in a unique structure type and belongs to the family of two-layer structures. All crystallographically unique atoms (3 × Zr, 1 × Ni and 7 × Sb are located at sites with m symmetry. The structure contains `Zr2Ni2Sb5' and `Zr4Sb9' fragments and might be described as a new ZrSb2 derivative with a high Sb content.

  15. First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

    Science.gov (United States)

    Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

    2015-05-01

    First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

  16. The Enzyme Activity and Substrate Specificity of Two Major Cinnamyl Alcohol Dehydrogenases in Sorghum (Sorghum bicolor), SbCAD2 and SbCAD4.

    Science.gov (United States)

    Jun, Se-Young; Walker, Alexander M; Kim, Hoon; Ralph, John; Vermerris, Wilfred; Sattler, Scott E; Kang, ChulHee

    2017-08-01

    Cinnamyl alcohol dehydrogenase (CAD) catalyzes the final step in monolignol biosynthesis, reducing sinapaldehyde, coniferaldehyde, and p -coumaraldehyde to their corresponding alcohols in an NADPH-dependent manner. Because of its terminal location in monolignol biosynthesis, the variation in substrate specificity and activity of CAD can result in significant changes in overall composition and amount of lignin. Our in-depth characterization of two major CAD isoforms, SbCAD2 (Brown midrib 6 [bmr6]) and SbCAD4, in lignifying tissues of sorghum ( Sorghum bicolor ), a strategic plant for generating renewable chemicals and fuels, indicates their similarity in both structure and activity to Arabidopsis ( Arabidopsis thaliana ) CAD5 and Populus tremuloides sinapyl alcohol dehydrogenase, respectively. This first crystal structure of a monocot CAD combined with enzyme kinetic data and a catalytic model supported by site-directed mutagenesis allows full comparison with dicot CADs and elucidates the potential signature sequence for their substrate specificity and activity. The L119W/G301F-SbCAD4 double mutant displayed its substrate preference in the order coniferaldehyde > p -coumaraldehyde > sinapaldehyde, with higher catalytic efficiency than that of both wild-type SbCAD4 and SbCAD2. As SbCAD4 is the only major CAD isoform in bmr6 mutants, replacing SbCAD4 with L119W/G301F-SbCAD4 in bmr6 plants could produce a phenotype that is more amenable to biomass processing. © 2017 American Society of Plant Biologists. All Rights Reserved.

  17. Ferromagnetic Instability in AFe4Sb12 (A = Ca, Sr, and Ba)

    OpenAIRE

    Matsuoka, E.; Hayashi, K.; Ikeda, A.; Tanaka, K.; Takabatake, T.; Higemoto, W.; Matsumura, M.

    2004-01-01

    Magnetic, transport and thermal properties of AFe4Sb12 (A = Ca, Sr, Ba) are reported. All three compounds show a maximum in both the magnetic susceptibility and thermopower at 50 K, and a large electronic specific heat coefficient of 100 mJ/mol K2. These properties are the characteristics of a nearly ferromagnetic metal. Furthermore, a remanent moment of the order of 10-3muB/Fe was observed below 54, 48, and 40 K for A = Ca, Sr, and Ba, respectively. The volume fraction of the ferromagnetic c...

  18. A theoretical-spectroscopy, ab initio-based study of the electronic ground state of 121SbH3

    International Nuclear Information System (INIS)

    Yurchenko, Sergei N.; Carvajal, Miguel; Yachmenev, Andrey; Thiel, Walter; Jensen, Per

    2010-01-01

    For the stibine isotopologue 121 SbH 3 , we report improved theoretical calculations of the vibrational energies below 8000 cm -1 and simulations of the rovibrational spectrum in the 0-8000 cm -1 region. The calculations are based on a refined ab initio potential energy surface and on a new dipole moment surface obtained at the coupled cluster CCSD(T) level. The theoretical results are compared with the available experimental data in order to validate the ab initio surfaces and the TROVE computational method [Yurchenko SN, Thiel W, Jensen P. J Mol Spectrosc 2007;245:126-40] for calculating rovibrational energies and simulating rovibrational spectra of arbitrary molecules in isolated electronic states. A number of predicted vibrational energies of 121 SbH 3 are provided in order to stimulate new experimental investigations of stibine. The local-mode character of the vibrations in stibine is demonstrated through an analysis of the results in terms of local-mode theory.

  19. Local distortions about Nd in NdO{sub s4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Keiber, T.; Bridges, F. [Department of Physics, University of California, Santa Cruz, California 95064 (United States); Baumbach, R.E. [Los Alamos National Laboratory, New Mexico (United States); Maple, M.B. [Physics Department, University of California, San Diego, California (United States)

    2013-02-15

    We present an extended X-ray absorption fine structure (EXAFS) study of the NdOs{sub 4}Sb{sub 12} system at the Nd and Os L{sub III} edges. Nd is expected to be a ''rattler'' atom in this skutterudite crystal and we obtain a low Einstein temperature (61 K) as expected. However, although ultrasonic measurements have suggested a large off-center displacement of Nd, the EXAFS data are inconsistent with such a model. An analysis of the first two Os-Sb peaks in the Os L{sub III} data also shows no evidence for unusual disorder. In contrast the Nd-Os peak in the Nd L{sub III} data and the Os-Os peak in the Os L{sub III} data both show significant disorder at 4 K, with the largest disorder found for the Nd-Os pair. This suggests that a distortion of the structure that involves mainly the Os atoms is present; it is likely that this distortion - which may also be dynamic - also causes the anomalies in the ultrasonic data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. InAsSb for IR detection at 12 μm

    International Nuclear Information System (INIS)

    Dawson, L.R.

    1989-01-01

    The authors report the molecular beam epitaxial (MBE) growth of InAsSb alloys and superlattices on InSb substrates with intervening buffer layers designed to provide a lattice match to the SLS. Efficient incorporation of As is achieved by using an As 2 (thermally cracked) source in conjunction with an Sb 2 source at growth temperature of 425-450 0 C. At these temperatures desorption of excess Sb from the surface is limited and careful control of the Sb:In ratio is required. Even though the growth temperature is quite near the melting point of the alloys involved (525-550 0 C), TEM reveals abrupt, planar interfaces in superlattices with layer thicknesses less than 150 A. Undoped InSb layers are very pure, with n(77K) -- 1 x 10 14 cm -3 and μ(77K) --280,000 cm 2 V -1 sec -1 . Doping is easily controlled up to -- 10 18 using Be and PbSe. The entire structure (buffer plus SLS) is in tension with respect to the parent substrate, leading to extensive cracking for conventional buffer layers. More complex buffers, designed to more effectively relax the material to its equilibrium lattice constant, are used to solve this cracking problem. InAsSb SLSs grown on such buffer layers are crack-free and show marked reduction in dislocation density relative to that of the buffer layer. FTIR measurements made on SLSs with different compositions and differing amounts of strain in the active regions show optical absorption that is strain-shifted to wavelengths beyond λ c for bulk alloys, with substantial absorption beyond 12 μm

  1. Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-05-01

    A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

  2. Polar Kerr Effect from Time-Reversal Symmetry Breaking in the Heavy-Fermion Superconductor PrOs4Sb12

    Science.gov (United States)

    Levenson-Falk, E. M.; Schemm, E. R.; Aoki, Y.; Maple, M. B.; Kapitulnik, A.

    2018-05-01

    We present polar Kerr effect measurements of the filled skutterudite superconductor PrOs4 Sb12 . Simultaneous ac susceptibility measurements allow us to observe the superconducting transition under the influence of heating from the optical beam. A nonzero Kerr angle θK develops below the superconducting transition, saturating at ˜300 nrad at low temperatures. This result is repeated across several measurements of multiple samples. By extrapolating the measured θK(T ) to zero optical power, we are able to show that the Kerr angle onset temperature in one set of measurements is consistent with the transition to the B phase at TC 2. We discuss the possible explanations for this result and its impact on the understanding of multiphase and inhomogeneous superconductivity in PrOs4 Sb12 .

  3. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    International Nuclear Information System (INIS)

    Aliev, Z.S.; Musaeva, S.S.; Babanly, D.M.; Shevelkov, A.V.; Babanly, M.B.

    2010-01-01

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb 2 Se 3 -SbI 3 , Sb-SbSeI, SbI 3 -Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony (ΔG-bar, ΔH-bar, ΔS-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: ΔG f,298 0 =-80.12±1.81kJ/mol; ΔH f,298 0 =-77.3±1.8kJ/mol; S 298 0 =155.2±9.5J/(molK).

  4. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Z S; Musaeva, S S; Babanly, D M [Baku State University, General and Inorganic Chemistry Department (Azerbaijan); Shevelkov, A.V., E-mail: shev@inorg.chem.msu.r [Moscow Lomonosov State University, Chemistry Department (Russian Federation); Babanly, M.B., E-mail: Babanly_mb@rambler.r [Baku State University, General and Inorganic Chemistry Department (Azerbaijan)

    2010-09-03

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb{sub 2}Se{sub 3}-SbI{sub 3}, Sb-SbSeI, SbI{sub 3}-Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony ({Delta}G-bar, {Delta}H-bar, {Delta}S-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: {Delta}G{sub f,298}{sup 0}=-80.12{+-}1.81kJ/mol; {Delta}H{sub f,298}{sup 0}=-77.3{+-}1.8kJ/mol; S{sub 298}{sup 0}=155.2{+-}9.5J/(molK).

  5. Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

    International Nuclear Information System (INIS)

    Murape, D.M.; Eassa, N.; Neethling, J.H.; Betz, R.; Coetsee, E.; Swart, H.C.; Botha, J.R.; Venter, A.

    2012-01-01

    A sulphur based chemical, [(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ] to which S has been added, not previously reported for the treatment of (1 0 0) n-GaSb surfaces, is introduced and benchmarked against the commonly used passivants Na 2 S·9H 2 O and (NH 4 ) 2 S. The surfaces of the treated material were studied by scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It has been found that the native oxides present on the GaSb surface are more effectively removed when treated with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ] + S) than with (NH 4 ) 2 S or Na 2 S·9H 2 O, as evidenced by the ratio of the O 506eV to Sb 457eV AES peaks. XPS results reveal that Sb 2 S 3 /Sb 2 S 5 “replaces” Sb 2 O 3 /Sb 2 O 5 , suggesting that sulphur atoms substitute oxygen atoms in Sb 2 O 3 /Sb 2 O 5 to form Sb-S. It seems sulphurization only partially removes Ga 2 O 3 . Treatment with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ] + S) also results in a noteworthy improvement in the current-voltage (I-V) characteristics of Au/n-GaSb Schottky contacts compared to those fabricated on as-received material.

  6. Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2015-11-15

    The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

  7. Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

    Science.gov (United States)

    Qi, Pengfei; Pichler, Thomas

    2016-02-01

    Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V). Copyright © 2015 Elsevier Ltd. All rights reserved.

  8. Rare-earth (R) and transition metals (d) based skutterudites RM4Sb12: new materials for thermoelectric power generation; Etude de skutterudites de terres-rares (R) et de metaux d (M) du type RM4Sb12: de nouveaux materiaux thermoelectriques pour la generation d'electricite

    Energy Technology Data Exchange (ETDEWEB)

    Berardan, D.

    2004-07-15

    This thesis presents the physical and thermoelectric properties of new skutterudite compounds, with general formula R{sub y-p}R'{sub p}Fe{sub 4-x}(Co/Ni){sub x}Sb{sub 12} (R and R' = Ce, Yb, Ba, La). It shows that Yb valence state decreases when Yb fraction increases. However, it does not depend on the temperature, which evidences a mixed valence state (two different valence states for two distinct crystallographic sites at a local point of view). Ce is always trivalent in these compounds. The character of the dominant interactions changes from antiferromagnetic to ferromagnetic when one goes from trivalent cerium or lanthanum to nearly divalent ytterbium or divalent barium. The effective paramagnetic moment has been separated into three contributions originating from Ce, Yb and [Fe{sub 4}Sb{sub 12}]. The last one does not depend on the nature or on the valence state or R and R' atoms, but it decreases when Ni substitutes Fe. A magnetic transition occurs at 6.5 K for R = Yb and Ba, possibly to a spin glass state. Electrical and thermal transport properties have been determined from 5 K to 800 K, and the materials properties of the materials have been discussed concerning thermoelectric power generation. The power factor, and the thermoelectric figure of merit ZT are increased in Ce{sub y}/2Yb{sub y}/2Fe{sub 4-x}(Co/Ni){sub x}Sb{sub 12} type skutterudites as compared to R{sub y}Fe{sub 4-x}(Co/Ni){sub x}Sb{sub 12} type skutterudites. (author)

  9. Preparation and chemical properties of the skutterudites (Ce-Yb) yFe4-x(Co/Ni) xSb12

    International Nuclear Information System (INIS)

    Berardan, D.; Alleno, E.; Godart, C.; Rouleau, O.; Rodriguez-Carvajal, J.

    2005-01-01

    The double-filled skutterudites Ce y/2 Yb y/2 Fe 4-x Co x Sb 12 and Ce y/2 Yb y/2 Fe 4-x Ni x Sb 12 have been synthesized as single phase materials. The evolution of the lattice parameters and of the filling fractions with substitutions on the transition metal site have been studied by X-ray diffraction and electron probe microanalysis, respectively. Both results were compared to that of single filled series (Ce/Yb) y Fe 4-x (Co/Ni) x Sb 12 . It shows that double-filled skutterudites can be understood as a solid solution between single filled ones. The valence states of Ce and Yb in all series have been studied using X-ray absorption spectroscopy at the L 3 edges, and we discuss their relationships with structural parameters. Ce is always trivalent, whereas Yb valence state decreases as Yb fraction increases. No distortion of the environment or sub-position of Yb in the cage have been seen by neutron diffraction. The Seebeck coefficient has been measured using a home made apparatus from 120 K to 300 K. It shows a crossover from p- to n-type conductivity for Co or Ni rich skutterudites in the six series. We discuss the influence on the room temperature thermopower of valence states, filling fractions and substitution rate on the transition metal site. Thermopower seems to be only driven by charge carriers concentration

  10. Preparation and crystal structure of Ca4Sb2O

    International Nuclear Information System (INIS)

    Eisenmann, B.; Limartha, H.; Schaefer, H.

    1980-01-01

    The formerly described compound Ca 2 Sb is to be corrected to Ca 4 Sb 2 O as shown by X-ray diffractometer data of single crystals and neutron diffraction diagrams of powders. The compound crystallizes in the K 2 NiF 4 structure type. (orig.)

  11. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  12. Dissimilatory Sb(V) reduction by microorganisms isolated from Sb-contaminated sediment

    Science.gov (United States)

    Dovick, M. A.; Kulp, T. R.

    2013-12-01

    Mining and smelting are major sources of trace metal contamination in freshwater systems. Arsenic (As) is a common contaminant derived from certain mining operations and is a known toxic metalloid and carcinogen. Antimony (Sb) is listed as a pollutant of priority interest by the EPA and is presumed to share similar geochemical and toxicological properties with arsenic. Both elements can occur in four different oxidation states (V, III, 0, and -III) under naturally occurring conditions. In aqueous solutions As(V) and Sb(V) predominate in oxygenated surface waters whereas As(III) and Sb(III) are stable in anoxic settings. Numerous studies have examined microbiological redox pathways that utilize As(V) as a terminal electron acceptor for anaerobic respiration, however there have been few studies on microbial mechanisms that may affect the biogeochemical cycling of Sb in the environment. Here we report bacterial reduction of Sb(V) to Sb(III) in anoxic enrichment cultures and bacterial isolates grown from sediment collected from an Sb contaminated pond at a mine tailings site in Idaho (total pond water Sb concentration = 235.2 +/- 136.3 ug/L). Anaerobic sediment microcosms (40 mL) were established in artificial freshwater mineral salt medium, amended with millimolar concentrations of Sb(V), acetate or lactate, and incubated at 27°C for several days. Antimony(V), lactate, and acetate concentrations were monitored during incubation by High Performance Liquid Chromatography (HPLC) and Ion Chromatography (IC). Live sediment microcosms reduced millimolar amendments of Sb(V) to Sb(III) coupled to the oxidation of acetate and lactate, while no activity occurred in killed controls. Enrichment cultures were established by serially diluting Sb(V)-reducing microcosms in mineral salt medium with Sb(V) and acetate, and a Sb(V)-reducing bacterial strain was isolated by plating on anaerobic agar plates amended with millimolar Sb(V) and acetate. Direct cell counting demonstrated that

  13. Mössbauer and magnetic studies of Mg{sub 1+2x}Sb{sub x}Fe{sub 2−3x}O{sub 4} spinel ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Widatallah, H.M., E-mail: hishammw@squ.edu.om [Department of Physics, College of Science, Sultan Qaboos University, 123 Muscat (Oman); Al-Mamari, F.A.S.; Al-Saqri, N.A.M.; Gismelseed, A.M.; Al-Omari, I.A.; Al-Shahumi, T.M.H. [Department of Physics, College of Science, Sultan Qaboos University, 123 Muscat (Oman); Alhaj, A.F. [Department of Physics, Qasim University, Al-Qasim (Saudi Arabia); Abo El Ata, A.M. [Department of Physics, Faculty of Science, Tanta University, Tanta (Egypt); Elzain, M.E. [Department of Physics, College of Science, Sultan Qaboos University, 123 Muscat (Oman)

    2013-06-15

    Spinel-related Mg{sub 1+2x}Sb{sub x}Fe{sub 2−3x}O{sub 4} samples (x = 0.0, 0.05, 0.10, 0.15, 0.20, and 0.30) prepared using the conventional double sintering technique were investigated using {sup 57}Fe Mössbauer spectroscopy and magnetic measurements. Mössbauer spectra favor a cationic distribution of the form (Mg{sub δ}Fe{sub 1−δ}){sup A}[Mg{sub 1+2x−δ}Sb{sub x}Fe{sub 1+δ−3x}]{sup B}O{sub 4} among the tetrahedral-A and octahedral-B sites of the spinel structure. The cation distribution parameter (δ) was found to vary with the Sb{sup 5+} concentration (x). The Mössbauer hyperfine magnetic fields at both sites and the Curie temperatures of the ferrites decrease as x increases. This was attributed to gradual weakening in the magnetic exchange interaction as more Fe{sup 3+} ions are substituted by diamagnetic Sb{sup 5+} and Mg{sup 2+} ones. The sample with x = 0.30 exhibits short range magnetic order due to cationic clustering and/or superparamagnetism. The magnetization of all samples was found to be temperature-dependent implying that δ depends on temperature in addition to x. At low temperatures the substituted ferrites (x ≠ 0.0) unexpectedly exhibit higher magnetization values relative to that of the pure ferrite MgFe{sub 2}O{sub 4}. This behavior, while at variance with the Néel's model for ferrimagnetism, is explicable in terms of the spin canting mechanism proposed in the Yafet–Kittel model. - Highlights: ► A Mössbauer and magnetic study of Sb{sup 5+} and Mg{sup 2+} co-substituted ferrites of the composition Mg{sub 1+2x}Sb{sub x}Fe{sub 2−3x}O{sub 4} is reported. ► The cation distribution in Mg{sub 1+2x}Sb{sub x}Fe{sub 2−3x}O{sub 4} is shown to depend on both the Sb{sup 5+} ionic concentration and the temperature. ► The A–B magnetic exchange interaction and Mössbauer hyperfine fields weaken with increasing Sb{sup 5+} and Mg{sup 2+} concentrations. ► The magnetization of the substituted samples with x ≠ 0.00 increases

  14. TANK 40 FINAL SB4 CHEMICAL CHARACTERIZATION RESULTS

    International Nuclear Information System (INIS)

    Best, J.

    2008-01-01

    A sample of Sludge Batch 4 (SB4) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for elemental and chemical composition including noble metals. These analyses along with the WAPS analyses will help define the composition of the sludge currently in Tank 40 which is currently being fed to DWPF and will become part of Sludge Batch 5 (SB5). At SRNL the 3-L Tank 40 SB4 sample was transferred from the shipping container into a 4-L vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 280 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO 3 /HCl in sealed Teflon(reg s ign) vessels and four in Na 2 O 2 using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Three glass standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted and submitted to Analytical Development (AD) for inductively coupled plasma-atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma-mass spectrometry (ICP-MS) analysis, and cold vapor atomic absorption (CV-AA) analysis. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB4 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES and ICP-MS. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. A sample of Tank 40 SB4 decant was collected by carefully removing the supernate phase

  15. Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

    Science.gov (United States)

    Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

    2018-04-01

    Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

  16. Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.

    Science.gov (United States)

    Guo, San-Dong; Liu, Jiang-Tao

    2017-12-06

    Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K -1 at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and

  17. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Science.gov (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  18. The Influence of Growth Temperature on Sb Incorporation in InAsSb, and the Temperature-dependent Impact of Bi Surfactants

    Science.gov (United States)

    2014-01-01

    temperature was set to give a beam equivalent pressure ( BEP ) of 4.8x10-7 Torr, as measured in this configuration. 10 4 We have shown in prior...to the value needed to grow lattice matched InAsSb on GaSb without using Bi surfactant at 415 C. The In growth rate was 1 m/hr. The Sb BEP was...1.2x10-7 Torr and the As BEP was 5.71x10-7 Torr. The absolute flux of all the constituents and the V/III ratios were kept constant for both layers of

  19. Electrodeposition and electrochemical characterisation of thick and thin coatings of Sb and Sb/Sb2O3 particles for Li-ion battery anodes

    International Nuclear Information System (INIS)

    Bryngelsson, Hanna; Eskhult, Jonas; Edstroem, Kristina; Nyholm, Leif

    2007-01-01

    The possibilities to electrodeposit thick coatings composed of nanoparticles of Sb and Sb 2 O 3 for use as high-capacity anode materials in Li-ion batteries have been investigated. It is demonstrated that the stability of the coatings depends on their Sb 2 O 3 concentrations as well as microstructure. The electrodeposition reactions in electrolytes with different pH and buffer capacities were studied using chronopotentiometry and electrochemical quartz crystal microbalance measurements. The obtained deposits, which were characterised with XRD and SEM, were also tested as anode materials in Li-ion batteries. The influence of the pH and buffer capacity of the deposition solution on the composition and particle size of the deposits were studied and it is concluded that depositions from a poorly buffered solution of antimony-tartrate give rise to good anode materials due to the inclusion of precipitated Sb 2 O 3 nanoparticles in the Sb coatings. Depositions under conditions yielding pure Sb coatings give rise to deposits composed of large crystalline particles with poor anode stabilities. The presence of a plateau at about 0.8 V versus Li + /Li due to SEI forming reactions and the origin of another plateau at about 0.4 V versus Li + /Li seen during the lithiation of thin Sb coatings are also discussed. It is demonstrated that the 0.4 V plateau is present for Sb coatings for which the (0 1 2) peak is the main peak in the XRD diffractogram

  20. High-Pressure Synthesis, Structure, and Magnetic Properties of Ge-Substituted Filled Skutterudite Compounds; LnxCo4Sb12−yGey, Ln = La, Ce, Pr, and Nd

    Directory of Open Access Journals (Sweden)

    Hiroshi Fukuoka

    2017-12-01

    Full Text Available A series of new Ge-substituted skutterudite compounds with the general composition of LnxCo4Sb12−yGey, where Ln = La, Ce, Pr, and Nd, is prepared by high-pressure and high-temperature reactions at 7 GPa and 800 °C. They have a cubic unit cell and the lattice constant for each compound is 8.9504 (3, 8.94481 (6, 8.9458 (3, and 8.9509 (4 Å for the La, Ce, Pr, and Nd derivatives, respectively. Their chemical compositions, determined by electron prove microanalysis, are La0.57Co4Sb10.1Ge2.38, Ce0.99Co4Sb9.65Ge2.51, Pr0.97Co4Sb9.52Ge2.61, and Nd0.87Co4Sb9.94Ge2.28. Their structural parameters are refined by Rietveld analysis. The guest atom size does not affect the unit cell volume. The Co–Sb/Ge distance mainly determines the unit cell size as well as the size of guest atom site. The valence state of lanthanide ions is 3+.

  1. Crystal structure, chemical bond and enhanced performance of β-Zn4Sb3 compounds with interstitial indium dopant

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting; Zhang, Qingjie

    2014-01-01

    Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn 4 Sb 3 . • The simultaneous increases in α and σ are observed in the In-doped Zn 4 Sb 3 compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn 4 Sb 3 compounds. - Abstract: In-doped β-Zn 4 Sb 3 compounds (Zn 4−x In x Sb 3 , 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn 4 Sb 3 and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d 5/2 core level showed that the interstitial In dopant was n-type dopant (In 3+ ) in slightly In-doped Zn 4−x In x Sb 3 , but acted as acceptor and was p-type dopant (In + ) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn 4−x In x Sb 3 . Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn 4−x In x Sb 3 can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn 3.82 In 0.18 Sb 3 and increased by 68% compared with that of the undoped β-Zn 4 Sb 3

  2. The crystal structure of ferdowsiite Ag8Sb4(As,Sb)4S16 and its relations to other ABX2 (A=Ag; B=As,Sb,Bi; X=S,Se) structures

    DEFF Research Database (Denmark)

    Makovicky, Emil; Topa, Dan

    2014-01-01

    arsenic. The crystal structure of ferdowsiite is a superstructure of a PbS like motif. The {100} planes of the PbS-like substructure are the (105̅), (301) and (010) planes in terms of the ferdowsiite lattice. The structure contains zig-zag chains of Sb1 connected via short Sb-S bonds and flanked by (Sb...

  3. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Lien

    2011-04-13

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

  4. Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Caillat, T; Borshchevsky, A; Fleurial, J P

    1997-07-01

    {beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

  5. Ba{sub 4}In{sub 8}Sb{sub 16}: Thermoelectric properties of a new layered Zintl phase with infinite zigzag Sb chains and pentagonal tubes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S J; Hu, S; Uher, C; Kanatzidis, M G

    1999-11-01

    A new Zintl phase Ba{sub 4}In{sub 8}Sb{sub 16} was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700 C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) {angstrom}, b = 4.5239(14) {angstrom}, c = 19.495(6) {angstrom}, and Z = 1. Ba{sub 4}In{sub 8}Sb{sub 16} has a two-dimensional structure with thick corrugated (In{sub 8}Sb{sub 16}){sup 8{minus}} layers separated by Ba{sup 2+} ions. In the layer, InSb{sub 4} tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap ({approximately} 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba{sub 4}In{sub 8}Sb{sub 16} show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 {micro}V/K. The thermal conductivity of Ba{sub 4}In{sub 8}Sb{sub 16} is about 1.7 W/m{sm{underscore}bullet}K in the temperature range 150--300 K.

  6. Development in Zn4Sb-based thermoelectric materials

    DEFF Research Database (Denmark)

    Yin, Hao

    or thermopower,  the electrical conductivity, the thermal conductivity and T the absolute temperature. The best thermoelectrics are heavily doped semiconductors with high thermoelectric power factors and low thermal conductivities, known as “Phonon Glasses Electrical Crystals”. Zn4Sb3 is one such material......-section. The following part reports the effect of nano-particles on the thermoelectric properties and thermal stability of Zn4Sb3. Though TiO2 nano particles have remarkably enhanced the stability, the thermoelectric performance of all the nano-composites deteriorates. Optimization of the content of the nano...

  7. Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Park, S -M; Kim, S -J; Kanatzidis, M G

    2003-11-01

    A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

  8. Transport properties of partially-filled Ce{sub y}Co{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Uher, C; Chen, B; Hu, S; Morelli, D T; Meisner, G P

    1997-07-01

    The authors have investigated the magnetic and transport properties of Ce{sub y}Co{sub 4}Sb{sub 12} filled skutterudites with the filling fraction y {le} 0.1. These compounds are n-type materials that develop a magnetic moment upon the presence of trivalent cerium. Cerium has a strong influence on all transport properties and even in small amounts it drastically reduces the lattice thermal conductivity. The resulting figures of merit are comparable to the values established previously for the p-type filled skutterudites.

  9. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

    International Nuclear Information System (INIS)

    Tran, Lien

    2011-01-01

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

  10. Two-mode Diode-laser Spectroscopy with a InAsSb/InAsSbP Laser near 3.6 ćm

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Danilova, A. P.; Imenkov, A. N.; Kolchanova, N. M.; Sherstnev, V. V.; Yakovlev, Yu. P.

    1999-01-01

    Roč. 33, č. 12 (1999), s. 1322-1327 ISSN 1063-7826 R&D Projects: GA AV ČR IAA4040708 Institutional research plan: CEZ:A54/98:Z4-040-9-ii Keywords : output frequency of InAsSb/InAsSbP * current dependence Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.565, year: 1999

  11. Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

    CERN Document Server

    Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

    2002-01-01

    We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

  12. Assembly of a new inorganic-organic frameworks based on [Sb4Mo12(OH)6O48]10- polyanion

    Science.gov (United States)

    Thabet, Safa; Ayed, Meriem; Ayed, Brahim; Haddad, Amor

    2014-10-01

    A new organic-inorganic hybrid material, (C4N2H7)8[K(H2O)]2[Sb4Mo12(OH)6O48]ṡ16H2O (1) has been isolated by the conventional solution method and characterized by elemental analysis, single-crystal X-ray diffraction, infrared spectroscopy, UV-visible spectroscopies, cyclic voltammetry and TG-DTA analysis. The compound crystallizes in the triclinic space group P - 1 with a = 13.407(6) Å, b = 13.906(2) Å, c = 14.657(7) Å, α = 77.216(9)°, β = 71.284(6)°, γ = 71.312(3)° and Z = 1. The crystal structure exhibits an infinite 1D inorganic structure built from [Sb4Mo12(OH)6O48]10- clusters and potassium cations; adjacent chains are further joined up hydrogen bonding interactions between protonated 2-methylimidazolim cations, water molecules and polyoxoanions to form a 3D supramolecular architecture.

  13. Analysis of the 4d9-(4d86p + 4p54d10) transitions of Sb VII and the strongest transitions of the 4d9-4d84f array of Sb VII and Te VIII

    International Nuclear Information System (INIS)

    Kildiyarova, R.R.; Churilov, S.S.; Joshi, Y.N.; Ryabtsev, A.N.

    1995-01-01

    The spectra of antimony and tellurium were photographed in the 100-200 A region on grazing incidence spectrographs at Moscow, Russia and NIST, U.S.A. laboratories. The 4d 9 -[4d 8 6p + 4p 5 4d 10 ] transition array of Sb VII was analyzed. 31 levels in Sb VII were established. 41 new lines in Sb VII belonging to the 4d 9 -(4p 5 4d 10 + 4d 8 6p) transition array have been classified. Seven lines each in Sb VII and Te VIII belonging to the 4d 9 -4d 8 4f transition array have been classified. Parametric least-squares-fitted calculations involving configuration interaction have been carried out to interpret the spectrum satisfactorily. (orig.)

  14. Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

    International Nuclear Information System (INIS)

    Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

    2009-01-01

    A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

  15. Synthesis and vibrational spectrum of antimony phosphate, SbPO4.

    Science.gov (United States)

    Brockner, Wolfgang; Hoyer, Lars P

    2002-07-01

    SbPO4 was synthesized via a new route by reacting antimony metal with meta-phosphoric acid, (HPO3)n at high temperatures. The Raman and IR spectra of the title compound were recorded and the vibrational modes assigned on the basis of a factor group analysis. The internal vibrations are derived from tetrahedral PO4 units (approaching Sb[PO4]) by the correlation method, although the structure is polymeric and not ionic.

  16. Field-orientation dependence of the specific heat of PrOs4Sb12

    International Nuclear Information System (INIS)

    Custers, Jeroen; Namai, Yukie; Tayama, Takashi; Sakakibara, Toshiro; Sugawara, Hitoshi; Aoki, Yuji; Sato, Hideyuki

    2006-01-01

    The superconducting (SC) gap of the Pr-based skutterudite PrOs 4 Sb 12 has been investigated by means of field-angle-dependent specific heat C(H,φ) experiments. At fixed temperatures, H was varied and rotated in the basal planes. A 4-fold oscillation of C(H,φ) is observed in the entire H-T SC phase diagram. The minima are located along the [100] directions suggesting the excistence of gap nodes or minima along these directions. The oscillation amplitude vertical bar A vertical bar becomes maximum at H/H c2 ∼0.3. Below, vertical bar A vertical bar->0. The temperature variation of vertical bar A vertical bar follows a quadratic dependence

  17. Liquidus Projection and Isothermal Section of the Sb-Se-Sn System

    Science.gov (United States)

    Chang, Jui-shen; Chen, Sinn-wen

    2017-12-01

    Sb-Se-Sn ternary alloys are promising chalcogenide materials. The liquidus projection and 673.2 K (400 °C) isothermal section of the Sb-Se-Sn ternary system are determined. Numerous Sb-Se-Sn alloys are prepared, and their primary solidification phases are examined. In addition to the three terminal phases, (Sb), (Se) and (Sn), there are Sb2Sn3, SbSn, SnSe, SnSe2, Sb2Se3, Sn2Sb9Se9, and SnSb2Se4 phases. In addition, there are two miscibility gaps along the Sb-Se and Se-Sn and sides. There are ten invariant reactions in the Sb-Se-Sn ternary system, and seven of them are experimentally determined in this study. The lowest reaction temperature of determined invariant reaction is L + SbSn = (Sn) + SnSe at 515.4 K ± 5 K (242.2 °C ± 5 °C). There are nine tie-triangles, which are Liquid + SbSn + SnSe, SbSn + SnSe + (Sb), SnSe + (Sb) + Sn2Sb9Se9, (Sb) + Sb2Se3 + Sn2Sb9Se9, SnSe + Sn2Sb9Se9 + SnSb2Se4, Sb2Se3 + Sn2Sb9Se9 + SnSb2Se4, SnSe + SnSe2 + SnSb2Se4, SnSe2 + SnSb2Se4 + Sb2Se3, and SnSe2 + Sb2Se3 + Liquid in the 673.2 K (400 °C) isothermal section of the Sb-Se-Sn ternary system.

  18. Uniaxial Pressure Effect on the SdH Oscillations in Heavy-Fermion Semimetal CeRu4Sb12

    International Nuclear Information System (INIS)

    Saha, S. R.; Kobayashi, M.; Sugawara, H.; Namiki, T.; Abe, K.; Aoki, Y.; Sato, H.

    2003-01-01

    We report the first successful Shubnikov-de Haas (SdH) experiment under uniaxial pressure in the anomalous heavy-fermion semimetal CeRu 4 Sb 12 . The nature of the quantum oscillations in the magnetoresistance is found to be significantly sensitive to uniaxial pressure. The results reveal that the nearly spherical Fermi surface elongates along the direction of the uniaxial pressure. (author)

  19. Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

    Science.gov (United States)

    Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

    2018-05-01

    We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

  20. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    Science.gov (United States)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-10-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  1. Unraveling the electrolyte properties of Na3SbS4 through computation and experiment

    Science.gov (United States)

    Rush, Larry E.; Hood, Zachary D.; Holzwarth, N. A. W.

    2017-12-01

    Solid-state sodium electrolytes are expected to improve next-generation batteries on the basis of favorable energy density and reduced cost. Na3SbS4 represents a new solid-state ion conductor with high ionic conductivities in the mS/cm range. Here, we explore the tetragonal phase of Na3SbS4 and its interface with metallic sodium anode using a combination of experiments and first-principles calculations. The computed Na-ion vacancy migration energies of 0.1 eV are smaller than the value inferred from experiment, suggesting that grain boundaries or other factors dominate the experimental systems. Analysis of symmetric cells of the electrolyte—Na/Na 3SbS4/Na —show that a conductive solid electrolyte interphase forms. Computer simulations infer that the interface is likely to be related to Na3SbS3 , involving the conversion of the tetrahedral SbS43 - ions of the bulk electrolyte into trigonal pyramidal SbS33 - ions at the interface.

  2. Study of interatomic potential and thermal structural properties of β-Zn4Sb3

    International Nuclear Information System (INIS)

    Li, Guodong; Li, Yao; Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng

    2012-01-01

    Highlights: ► The multi-body interatomic potentials of various models of β-Zn 4 Sb 3 have been developed to describe atomic interactions. ► The radial distribution function shows that the 10% vacancy of Zn site leads to the disorder of β-Zn 4 Sb 3 . ► The 10% vacancy of Zn site is the main cause of the exceptional low thermal conductivity. -- Abstract: Previous experimental research shows that the disordered Zn atoms in β-Zn 4 Sb 3 may have an important influence on its exceptionally low thermal conductivity and easily occurred phase transition. So the present work aims to study the influence of disordered Zn atoms on thermodynamics properties of β-Zn 4 Sb 3 by using molecular dynamics (MD) method. Firstly, based on first principles calculation and experimental results, the interatomic potentials of β-Zn 4 Sb 3 and MD analysis method are established, and the feasibility is verified. Then, the influence of disordered Zn atoms on thermal conductivity of β-Zn 4 Sb 3 is studied in detail. The simulation results indicate that the 10% vacant Zn atoms is the main reason for the exceptionally low thermal conductivity of β-Zn 4 Sb 3 , and it seems that the interstitial Zn atoms have little effect on its thermal conductivity.

  3. Frit Development Efforts for Sludge Batch 4 (SB4): Operating Window Assessments of Scenarios Leading Up to the Selected Preparation Plan for SB4

    International Nuclear Information System (INIS)

    Peeler, D

    2006-01-01

    The objective of this report is to document technical information that has been provided to Defense Waste Processing Facility (DWPF) and Closure Business Unit (CBU) personnel as part of the frit development support for Sludge Batch 4 (SB4). The information presented in this report includes projected operating windows (expressed in terms of waste loading) for various sludge blending and/or washing options coupled with candidate frits of interest. Although the Nominal Stage assessment serves as the primary tool for these evaluations, select systems were also evaluated using a Variation Stage assessment in which compositional variations were introduced. In addition, assessments of the impacts of nepheline formation potential and the SO 4 - solubility limit on the projected operating windows are also provided. Although this information was used as part of the technical basis leading to CBU's development of the preferred SB4 preparation plan, none of the options presented in this report was selected as the preferred plan. Therefore, the information is presented without significant interpretation of the resulting operating windows, but the projected windows are provided so additional insight can be explored if desired. Detailed assessments of the projected operating windows (using both Nominal and Variation Stage assessments) of the preferred sludge preparation plan with candidate frits are to be documented elsewhere. The information provided in this report is focused solely on model-based projections of the operating windows for various SB4 blending strategies of interest. Although nepheline formation potential is monitored via model predictions as a part of this assessment, experimental work investigating the impact of nepheline on glass quality is also being addressed in a parallel study. The results of this paper study and the experimental assessments of melt rate, SO 4 solubility, and/or nepheline formation potential are all critical components of the inputs into

  4. Sb(V reactivity with human blood components: redox effects.

    Directory of Open Access Journals (Sweden)

    Silvana López

    Full Text Available We assessed the reactivity of Sb(V in human blood. Sb(V reactivity was determined using an HPLC-HG-AFS hyphenated system. Sb(V was partially reduced to Sb(III in blood incubation experiments; however, Sb(III was a highly unstable species. The addition of 0.1 mol L(-1 EDTA prevented Sb(III oxidation, thus enabling the detection of the reduction of Sb(V to Sb(III. The transformation of Sb(V to Sb(III in human whole blood was assessed because the reduction of Sb(V in human blood may likely generate redox side effects. Our results indicate that glutathione was the reducing agent in this reaction and that Sb(V significantly decreased the GSH/GSSG ratio from 0.32 ± 0.09 to 0.07 ± 0.03. Moreover, the presence of 200 ng mL(-1 of Sb(V increased the activity of superoxide dismutase from 4.4 ± 0.1 to 7.0 ± 0.4 U mL(-1 and decreased the activity of glutathione peroxidase from 62 ± 1 to 34 ± 2 nmol min(-1 mL(-1.

  5. Low-temperature synthesis of single-phase Co7Sb2O12

    International Nuclear Information System (INIS)

    Brito, M.S.L.; Escote, M.T.; Santos, C.O.P.; Lisboa-Filho, P.N.; Leite, E.R.; Oliveira, J.B.L.; Gama, L.; Longo, E.

    2004-01-01

    Polycrystalline Co 7 Sb 2 O 12 compounds have been synthesized by a chemical route, which is based on a modified polymeric precursor method. In order to study the physical properties of the samples, X-ray diffraction (XRD), thermal analyses (TG and DSC), infrared spectroscopy (IR), specific surface area (BET), and magnetization measurements were performed on these materials. Characterization through XRD revealed that the samples are single-phase after a heat-treatment at 1100 deg. C for 2 h, while the X-ray patterns of the samples heat-treated at lower temperatures revealed the presence of additional Bragg reflections belonging to the Co 6 Sb 2 O 6 phase. These data were analyzed by means of Rietveld refinement and further analyze showed that Co 7 Sb 2 O 12 displays an inverse spinel crystalline structure. In this structure, the Co 2+ ions occupy the eight tetrahedral positions, and the sixteen octahedral positions are randomly occupied by the Sb 5+ and Co 2+ ions. IR studies disclosed two strong absorption bands, ν 1 and ν 2 , in the expected spectral range for a spinel-type binary oxide with space group Fd3m. Exploratory studies concerning the magnetic properties indicated that this sample presents a spin-glass transition at T f ∼ 64 K

  6. Compositional and structural characterisation of GaSb and GaInSb

    International Nuclear Information System (INIS)

    Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

    2005-01-01

    Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

  7. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  8. Tav4SB: integrating tools for analysis of kinetic models of biological systems.

    Science.gov (United States)

    Rybiński, Mikołaj; Lula, Michał; Banasik, Paweł; Lasota, Sławomir; Gambin, Anna

    2012-04-05

    Progress in the modeling of biological systems strongly relies on the availability of specialized computer-aided tools. To that end, the Taverna Workbench eases integration of software tools for life science research and provides a common workflow-based framework for computational experiments in Biology. The Taverna services for Systems Biology (Tav4SB) project provides a set of new Web service operations, which extend the functionality of the Taverna Workbench in a domain of systems biology. Tav4SB operations allow you to perform numerical simulations or model checking of, respectively, deterministic or stochastic semantics of biological models. On top of this functionality, Tav4SB enables the construction of high-level experiments. As an illustration of possibilities offered by our project we apply the multi-parameter sensitivity analysis. To visualize the results of model analysis a flexible plotting operation is provided as well. Tav4SB operations are executed in a simple grid environment, integrating heterogeneous software such as Mathematica, PRISM and SBML ODE Solver. The user guide, contact information, full documentation of available Web service operations, workflows and other additional resources can be found at the Tav4SB project's Web page: http://bioputer.mimuw.edu.pl/tav4sb/. The Tav4SB Web service provides a set of integrated tools in the domain for which Web-based applications are still not as widely available as for other areas of computational biology. Moreover, we extend the dedicated hardware base for computationally expensive task of simulating cellular models. Finally, we promote the standardization of models and experiments as well as accessibility and usability of remote services.

  9. The OsO(3)F(+) and mu-F(OsO(3)F)(2)(+) cations: their syntheses and study by Raman and (19)F NMR spectroscopy and electron structure calculations and X-ray crystal structures of [OsO(3)F][PnF(6)] (Pn = As, Sb), [OsO(3)F][HF](2)[AsF(6)], [OsO(3)F][HF][SbF(6)], and [OsO(3)F][Sb(3)F(16)].

    Science.gov (United States)

    Gerken, Michael; Dixon, David A; Schrobilgen, Gary J

    2002-01-28

    The fluoride ion donor properties of OsO(3)F(2) have been investigated. The salts [OsO(3)F][AsF(6)], [OsO(3)F][HF](2)[AsF(6)], mu-F(OsO(3)F)(2)[AsF(6)], [OsO(3)F][HF](2)[SbF(6)], and [OsO(3)F][HF][SbF(6)] have been prepared by reaction of OsO(3)F(2) with AsF(5) and SbF(5) in HF solvent and have been characterized in the solid state by Raman spectroscopy. The single-crystal X-ray diffraction studies of [OsO(3)F][AsF(6)] (P2(1)/n, a = 7.0001(11) A, c = 8.8629(13) A, beta = 92.270(7) degrees, Z = 4, and R(1) = 0.0401 at -126 degrees C), [OsO(3)F][SbF(6)] (P2(1)/c, a = 5.4772(14) A, b = 10.115(3) A, c = 12.234(3) A, beta = 99.321(5) degrees, Z = 4, and R(1) = 0.0325 at -173 degrees C), [OsO(3)F][HF](2)[AsF(6)] (P2(1)/n, a = 5.1491(9) A, b = 8.129(2) A, c = 19.636(7) A, beta = 95.099(7) degrees, Z = 4, and R(1) = 0.0348 at -117 degrees C), and [OsO(3)F][HF][SbF(6)] (Pc, a = 5.244(4) A, b = 9.646(6) A, c = 15.269(10) A, beta = 97.154(13) degrees, Z = 4, and R(1) = 0.0558 at -133 degrees C) have shown that the OsO(3)F(+) cations exhibit strong contacts to the anions and HF solvent molecules giving rise to cyclic, dimeric structures in which the osmium atoms have coordination numbers of 6. The reaction of OsO(3)F(2) with neat SbF(5) yielded [OsO(3)F][Sb(3)F(16)], which has been characterized by (19)F NMR spectroscopy in SbF(5) and SO(2)ClF solvents and by Raman spectroscopy and single-crystal X-ray diffraction in the solid state (P4(1)m, a = 10.076(6) A, c = 7.585(8) A, Z = 2, and R(1) = 0.0858 at -113 degrees C). The weak fluoride ion basicity of the Sb(3)F(16)(-) anion resulted in an OsO(3)F(+) cation (C(3)(v) point symmetry) that is well isolated from the anion and in which the osmium is four-coordinate. The geometrical parameters and vibrational frequencies of OsO(3)F(+), ReO(3)F, mu-F(OsO(3)F)(2)(+), (FO(3)Os--FPnF(5))(2), and (FO(3)Os--(HF)(2)--FPnF(5))(2) (Pn = As, Sb) have been calculated using density functional theory methods.

  10. Chemical consequences of the neutron irradiation of ionic antimony oxides and Fe Sb2O4

    Energy Technology Data Exchange (ETDEWEB)

    Facetti, J F [Asuncion Nacional Univ. (Paraguay). Inst. de Ciencias

    1970-01-01

    The chemical consequences fo the neutron irradiation of ionic antimony oxides and Fe Sb2O4 are studied. The nature of the Sb-O2 bond effects the yield of SbV the higher the yield the more covalent the bond. In addition, the Fe Sb2O4 obeys the Maddock's rule.

  11. Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

    Science.gov (United States)

    Snyder, G. Jeffrey; Christensen, Mogens; Nishibori, Eiji; Caillat, Thierry; Brummerstedt Iversen, Bo

    2004-01-01

    By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

  12. Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

    Energy Technology Data Exchange (ETDEWEB)

    Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

    2014-06-15

    Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

  13. Gel-combustion synthesis of CoSb2O6 and its reduction to powdery Sb2Co alloy

    Directory of Open Access Journals (Sweden)

    MAJA JOVIC

    2009-01-01

    Full Text Available Sb2Co alloy in powdery form was synthesized via reduction with gaseous hydrogen of the oxide CoSb2O6, obtained by the citrate gel-combustion technique. The precursor was an aqueous solution of antimony nitrate, cobalt nitrate and citric acid. The precursor solution with mole ratio Co(II/Sb(V of 1:2 was gelatinized by evaporation of water. The gel was heated in air up to the temperature of self-ignition. The product of gel combustion was a mixture of oxides and it had to be additionally thermally treated in order to be converted to pure CoSb2O6. The reduction of CoSb2O6 by gaseous hydrogen yielded powdery Sb2Co as the sole phase. The process of oxide reduction to alloy was controlled by thermogravimetry, while X-ray diffractometry was used to control the phase compositions of both the oxides and alloys.

  14. Hydrothermal synthesis, structure, and catalytic properties of UO2Sb2O4

    International Nuclear Information System (INIS)

    Sykora, Richard E.; King, Joseph E.; Illies, Andreas J.; Albrecht-Schmitt, Thomas E.

    2004-01-01

    A new uranyl antimonite, UO 2 Sb 2 O 4 (1), has been prepared from the hydrothermal reaction of UO 3 with Sb 2 O 3 and KCl. The structure of 1 consists of neutral two-dimensional ∞ 2 [UO 2 Sb 2 O 4 ] layers. The U(VI) centers are ligated by two trans oxo ligands and four square pyramidal antimonite anions. In addition, the U(VI) also forms long contacts with two additional oxygen atoms that are distorted by 12.7(2) degree sign out of the equatorial plane perpendicular to the uranyl unit. These long interactions are significant owing to evidence supplied by bond valence sum calculations. The two-dimensional layers found in 1 are built from one-dimensional chains formed from edge-sharing UO 6 octahedra that run along the b-axis, and are linked together by [Sb 2 O 4 ] 2- chains. A flow microreactor system has been used to study the catalytic activity of 1, and these results show that it can be used as a catalyst in the conversion of propene and O 2 to acrolein. Crystallographic data: 1, monoclinic, space group C2/m, a=13.490(2) A, b=4.0034(6) A, c=5.1419(8) A, β=104.165(3) deg., Z=2, MoKα, λ=0.71073, R(F)=1.74% for 30 parameters with 365 reflections with I>2σ(I)

  15. Preparation and crystal structure of Ca/sub 4/Sb/sub 2/O

    Energy Technology Data Exchange (ETDEWEB)

    Eisenmann, B; Limartha, H; Schaefer, H; Graf, H A

    1980-12-01

    The formerly described compound Ca/sub 2/Sb is to be corrected to Ca/sub 4/Sb/sub 2/O as shown by X-ray diffractometer data of single crystals and neutron diffraction diagrams of powders. The compound crystallizes in the K/sub 2/NiF/sub 4/ type structure.

  16. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  17. 3+ and [Sb13Se16Br2] 5+ - Double and quadruple spiro cubanes from ionic liquids

    KAUST Repository

    Ahmed, Ejaz

    2014-01-08

    The reaction of antimony and selenium in the bromine-rich Lewis acidic ionic liquid [BMIm]Br·4.7AlBr3 (BMIm: 1-butyl-3- methylimidazolium) in the presence of a small amount of NbCl5 at 160 °C yielded dark-red crystals of [Sb7Se8Br 2][AlX4]3. For X = Cl0.15(1)Br 0.85(1), the compound is isostructural to [Sb7S 8Br2][AlCl4]3 [P212 121, a = 12.5132(5) Å, b = 17.7394(6) Å, c = 18.3013(6) Å]. For a higher chlorine content, X = Cl 0.58(1)Br0.42(1), a slightly disordered variant with a bisected unit cell is found [P21212, a = 12.3757(3) Å, b = 17.4116(5) Å, c = 9.0420(2) Å]. The [Sb 7Se8Br2]3+ heteropolycation (C 2 symmetry) is a spiro double-cubane with an antimony atom on the shared corner. From this distorted octahedrally coordinated central atom, tricoordinate selenium and antimony atoms alternate in the bonding sequence. The terminal antimony atoms each bind to a bromine atom. Quantum chemical calculations confirm polar covalent Sb-Se bonding within the cubes and indicate three-center, four-electron bonds for the six-coordinate spiro atoms. The calculated charge distribution reflects the electron-donor role of the antimony atoms. The use of a chlorine-rich ionic liquid resulted in the formation of triclinic [Sb13Se16Br2][AlX4] 5 with X = Cl0.80(1)Br0.20(1) [P$\\\\bar {1}$, a = 9.0842(5) Å, b = 19.607(1) Å, c = 21.511(1) Å, α = 64.116(6), β = 79.768(7), γ = 88.499(7)]. The cationic cluster [Sb13Se16Br2]5+ is a bromine-terminated spiro quadruple-cubane. This 31 atom concatenation of four cubes is assumed to be the largest known discrete main group polycation. A similar reaction in a chloride-free system yielded [Sb7Se 8Br2][Sb13Se16Br2] [AlBr4]8. In its monoclinic structure [P2/c, a = 27.214(5) Å, b = 9.383(2) Å, c = 22.917(4) Å, β = 101.68(1)], the two types of polycations alternate in layers along the a axis. In the series [Sb4+3nSe4+4nBr2](2+n)+, these cations are the members with n = 1 and 3. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGa

  18. Distribution, speciation and availability of antimony (Sb) in soils and terrestrial plants from an active Sb mining area

    International Nuclear Information System (INIS)

    Okkenhaug, Gudny; Zhu Yongguan; Luo Lei; Lei Ming; Li Xi; Mulder, Jan

    2011-01-01

    Here, we present one of the first studies investigating the mobility, solubility and the speciation-dependent in-situ bioaccumulation of antimony (Sb) in an active Sb mining area (Xikuangshan, China). Total Sb concentrations in soils are high (527-11,798 mg kg -1 ), and all soils, including those taken from a paddy field and a vegetable garden, show a high bioavailable Sb fraction (6.3-748 mg kg -1 ), dominated by Sb(V). Elevated concentrations in native plant species (109-4029 mg kg -1 ) underpin this. Both chemical equilibrium studies and XANES data suggest the presence of Ca[Sb(OH) 6 ] 2 , controlling Sb solubility. A very close relationship was found between the citric acid extractable Sb in plants and water or sulfate extractable Sb in soil, indicating that citric acid extractable Sb content in plants may be a better predictor for bioavailable Sb in soil than total acid digestible Sb plant content. - Highlights: → Antimony (Sb) in soils from an active Sb mining area is highly bioavailable. → Sb occurs mainly as Sb(V) in Sb mining impacted soils and plants. → Sb solubility in Sb mining impacted soils is governed by Ca[Sb(OH) 6 ] 2 . → Citric acid extractable Sb in plants and bioavailable Sb in soils are strongly correlated. - Antimony (Sb) in soils from an active Sb mining area is highly bioavailable and controlled by the solubility of calcium antimonate.

  19. Physics of bandgap formation in Cu-Sb-Se based novel thermoelectrics: the role of Sb valency and Cu d levels.

    Science.gov (United States)

    Do, Dat; Ozolins, Vidvuds; Mahanti, S D; Lee, Mal-Soon; Zhang, Yongsheng; Wolverton, C

    2012-10-17

    In this paper we discuss the results of ab initio electronic structure calculations for Cu(3)SbSe(4) (Se4) and Cu(3)SbSe(3) (Se3), two narrow bandgap semiconductors of thermoelectric interest. We find that Sb is trivalent in both the compounds, in contrast to a simple nominal valence (ionic) picture which suggests that Sb should be 5 + in Se4. The gap formation in Se4 is quite subtle, with hybridization between Sb 5s and the neighboring Se 4s, 4p orbitals, position of Cu d states, and non-local exchange interaction, each playing significant roles. Thermopower calculations show that Se4 is a better p-type system. Our theoretical results for Se4 agree very well with recent experimental results obtained by Skoug et al (2011 Sci. Adv. Mater. 3 602).

  20. “Pesting”-like oxidation phenomenon of p-type filled skutterudite Ce{sub 0.9}Fe{sub 3}CoSb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Pengfei [State Key Laboratory of High Performance Ceramic and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China); Xia, Xugui; Huang, Xiangyang; Gu, Ming [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China); Qiu, Yuting [State Key Laboratory of High Performance Ceramic and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China); Chen, Lidong, E-mail: chenlidong@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramic and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China)

    2014-11-05

    Highlights: • Ce{sub 0.9}Fe{sub 3}Co{sub 1}Sb{sub 12} exhibits “pesting”-like oxidation phenomenon at high temperature. • The highest oxidation rate of Ce{sub 0.9}Fe{sub 3}Co{sub 1}Sb{sub 12} appears around 800 K. • Severe periodically oxide layer peeling-off behavior is observed around 800 K. • The co-existence of Fe and Co is responsible for the poor oxidation resistance. - Abstract: Oxidation behavior of p-type filled skutterudite Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} in air was investigated and the oxidation mechanism was discussed in this study. Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} exhibits interesting “pesting”-like oxidation phenomenon around 800 K. The bulk sample completely disintegrates into a crowd of plate-like particles under this temperature range after only 24 h exposure in air. However, this abnormal oxidation phenomenon is not observed at temperature below 750 K or above 850 K. This result is consistent with the thermogravimetry and derivative thermogravimetry measurements which show that the oxidation rate for Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} around 800 K is the highest among 650–900 K. Microstructure observations suggest that this “pesting”-like oxidation is related with the severe periodically oxide layer peeling-off behavior around 800 K, which makes the Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} samples are easy to be oxidized because the fresh substrate surface is always exposed to high concentration oxygen atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy measurements indicated that in the oxide scale the direct contact of Fe{sup 3+}-oxide and CoSb{sub 2}O{sub 4} which possess different formation/growth rate and volume expansion coefficient should be responsible for this peculiar oxide layer peeling-off behavior around 800 K. This work can serve as an important reference for the designation of M{sub y}Fe{sub 4−x}Co{sub x}Sb{sub 12}-based skutterudite thermoelectric device.

  1. Crystal structure, chemical bond and enhanced performance of β-Zn{sub 4}Sb{sub 3} compounds with interstitial indium dopant

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Dingguo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Catalysis and Materials Science of the State Ethnic Affair Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Zhao, Wenyu, E-mail: wyzhao@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie, E-mail: zhangqj@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

    2014-07-15

    Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn{sub 4}Sb{sub 3}. • The simultaneous increases in α and σ are observed in the In-doped Zn{sub 4}Sb{sub 3} compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn{sub 4}Sb{sub 3} compounds. - Abstract: In-doped β-Zn{sub 4}Sb{sub 3} compounds (Zn{sub 4−x}In{sub x}Sb{sub 3}, 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn{sub 4}Sb{sub 3} and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d{sub 5/2} core level showed that the interstitial In dopant was n-type dopant (In{sup 3+}) in slightly In-doped Zn{sub 4−x}In{sub x}Sb{sub 3}, but acted as acceptor and was p-type dopant (In{sup +}) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn{sub 4−x}In{sub x}Sb{sub 3}. Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn{sub 4−x}In{sub x}Sb{sub 3} can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn{sub 3.82}In{sub 0.18}Sb{sub 3} and increased by 68% compared with that of the undoped β-Zn{sub 4}Sb{sub 3}.

  2. Charge fluctuation in Ce-based filled-skutterudite

    International Nuclear Information System (INIS)

    Yogi, M; Niki, H; Mukuda, H; Kitaoka, Y; Sugawara, H; Sato, H

    2009-01-01

    We carried out 121,123 Sb nuclear quadrupole resonance (NQR) measurement on CeOs 4 Sb 12 to investigate an anomaly observed in ReOs 4 Sb 12 . The full width of half maximum of the NQR spectrum shows a step-like increase at 115 K with decreasing temperature (T). The nuclear spin-spin relaxation rate 1/T 2 also shows a divergence at the same T. These results are considered to be caused by a distribution of the electric field gradient (EFG) and its fluctuation, which might arise from a small deformation of the cage which consists of twelve Sb. It is considered that the anomaly observed in ReOs 4 Sb 12 at T ∼ 120 K is originated from an unique crystal structure of the filled skutterudite.

  3. Electronic and magnetic properties of SmCrSb3 and GdCrSb3: A first principles study

    International Nuclear Information System (INIS)

    Sandeep; Ghimire, M.P.; Thapa, R.K.

    2011-01-01

    The density of states (DOS) and the magnetic moments of SmCrSb 3 and GdCrSb 3 have been studied by first principles full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). For the exchange-correlation potential, the local-spin density approximations with correlation energy (LSDA+U) method have been used. Total and partial DOS have been computed using the WIEN2k code. DOS result shows the exchange-splittings of Cr-3d and rare-earth (R) 4f states electrons, which are responsible for the ground state ferromagnetic (FM) behavior of the systems. The FM behavior of these systems is strongly influenced by the average number of Cr-3d and Sm (Gd) 4f-electrons. The effective moment of SmCrSb 3 is found to be 7.07 μ B while for GdCrSb 3 it is 8.27 μ B . The Cr atom plays a significant role on the magnetic properties due to the hybridization between Cr-3d and Sb-5p states. - Highlights: → DOS and the magnetic moments of SmCrSb 3 and GdCrSb 3 are studied by full-FP-LAPW method. → Exchange splitting of eg and t2g of Cr-3d states and the rare-earth 4f state electrons are responsible for ground state ferromagnetism. → Rare-earth magnetic moments are greater than Cr moment indicating presence of 4f states.

  4. Treatment for GaSb surfaces using a sulphur blended (NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}SO{sub 4} solution

    Energy Technology Data Exchange (ETDEWEB)

    Murape, D.M., E-mail: Davison.Murape@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031 (South Africa); Eassa, N.; Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein, 9300 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031 (South Africa)

    2012-07-01

    A sulphur based chemical, [(NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}SO{sub 4}] to which S has been added, not previously reported for the treatment of (1 0 0) n-GaSb surfaces, is introduced and benchmarked against the commonly used passivants Na{sub 2}S{center_dot}9H{sub 2}O and (NH{sub 4}){sub 2}S. The surfaces of the treated material were studied by scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It has been found that the native oxides present on the GaSb surface are more effectively removed when treated with ([(NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}SO{sub 4}] + S) than with (NH{sub 4}){sub 2}S or Na{sub 2}S{center_dot}9H{sub 2}O, as evidenced by the ratio of the O{sub 506eV} to Sb{sub 457eV} AES peaks. XPS results reveal that Sb{sub 2}S{sub 3}/Sb{sub 2}S{sub 5} 'replaces' Sb{sub 2}O{sub 3}/Sb{sub 2}O{sub 5}, suggesting that sulphur atoms substitute oxygen atoms in Sb{sub 2}O{sub 3}/Sb{sub 2}O{sub 5} to form Sb-S. It seems sulphurization only partially removes Ga{sub 2}O{sub 3}. Treatment with ([(NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}SO{sub 4}] + S) also results in a noteworthy improvement in the current-voltage (I-V) characteristics of Au/n-GaSb Schottky contacts compared to those fabricated on as-received material.

  5. Coexistence of charge order and antiferromagnetism in (TMTTF){sub 2}SbF{sub 6}: NMR study

    Energy Technology Data Exchange (ETDEWEB)

    Nomura, K., E-mail: knmr@phys.sci.hokudai.ac.jp; Yamamoto, M.; Matsunaga, N.; Hirose, S.; Shimohara, N.; Satoh, T.; Isome, T.; Liu, Y.; Kawamoto, A.

    2015-03-01

    The electronic state of (TMTTF){sub 2}SbF{sub 6} was investigated by the {sup 1}H and {sup 13}C NMR measurements. The temperature dependence of T{sub 1}{sup −1} in {sup 1}H NMR shows a sharp peak associated with the antiferromagnetic transition at T{sub AF}=6 K. The temperature dependence of T{sub 1}{sup −1} is described by the power law T{sup 2.4} below T{sub AF}. This suggests the nodal gapless spin wave excitation in antiferromagnetic phase. In {sup 13}C NMR, two sharp peaks at high temperature region, associated with the inner and the outer carbon sites in TMTTF dimer, split into four peaks below 150 K. It indicates that the charge disproportionation occurs. The degree of charge disproportionation Δρ is estimated as (0.25±0.09)e from the chemical shift difference. This value of Δρ is consistent with that obtained from the infrared spectroscopy. In the antiferromagnetic state (AFI), the observed line shape is well fitted by eight Lorentzian peaks. This suggests that the charge order with the same degree still remains in the AF state. From the line assignment, the AF staggered spin amplitude is obtained as 0.70 μ{sub B} and 0.24 μ{sub B} at the charge rich and the poor sites, respectively. These values corresponding to almost 1 μ{sub B} per dimer are quite different from 0.11 μ{sub B} of another AF (AFII) state in (TMTTF){sub 2}Br with effective higher pressure. As a result, it is understood that the antiferromagnetic staggered spin order is stabilized on the CO state in the AFI phase of (TMTTF){sub 2}SbF{sub 6}.

  6. Chemical and electrical properties of (NH4)2S passivated GaSb surface

    International Nuclear Information System (INIS)

    Tao Dongyan; Cheng Yu; Liu Jingming; Su Jie; Liu Tong; Yang Fengyun; Wang Fenghua; Cao Kewei; Dong Zhiyuan; Zhao Youwen

    2015-01-01

    The surface chemical properties of gallium antimonide (GaSb) after ammonium sulfide ((NH 4 ) 2 S) solution passivation have been studied by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and I–V measurement. An advantage of neutral (NH 4 ) 2 S + S solution over pure (NH 4 ) 2 S solution and alkaline (NH 4 ) 2 S + S solution has been found in the ability to passivate the GaSb surface by contrast and comparison. It has been found that alkaline (NH 4 ) 2 S + S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure (NH 4 ) 2 S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral (NH 4 ) 2 S + S solution passivation worked much better in improving the surface properties of GaSb. (paper)

  7. Electric Properties of Pb(Sb1/2Nb1/2)O3 PbTiO3 PbZrO3 Ceramics

    Science.gov (United States)

    Kawamura, Yasushi; Ohuchi, Hiromu

    1994-09-01

    Solid-solution ceramics of ternary system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 were prepared by the solid-state reaction of powder materials. Ceramic, electric, dielectric and piezoelectric properties and crystal structures of the system were studied. Sintering of the system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 is much easier than that of each end composition, and well-sintered high-density ceramics were obtained for the compositions near the morphotropic transformation. Piezoelectric ceramics with high relative dielectric constants, high radial coupling coefficient and low resonant resistance were obtained for the composition near the morphotropic transformation. The composition Pb(Sb1/2Nb1/2)0.075Ti0.45Zr0.475O3 showed the highest dielectric constant (ɛr=1690), and the composition Pb(Sb1/2Nb1/2)0.05Ti0.45Zr0.5O3 showed the highest radial coupling coefficient (kp=64%).

  8. Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

    Energy Technology Data Exchange (ETDEWEB)

    Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

    2016-07-15

    We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

  9. Centrosymmetry vs noncentrosymmetry in La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} based on the interesting size effects of lanthanides: Syntheses, crystal structures, and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Hua-Jun, E-mail: cszzl772002@yeah.net [Laboratory of Applied Research on the Characteristic Resources in the North of Guizhou Province, School of Chemistry and Chemical Engineering, Zunyi Normal College, Zunyi, Guizhou 563002 (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

    2016-05-15

    Two new quaternary sulfides La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} have been prepared from stoichiometric elements at 1223 K in an evacuated silica tube. Interestingly, La{sub 2}Ga{sub 0.33}SbS{sub 5} crystallizes in the centrosymmetric structure, while Ce{sub 4}GaSbS{sub 9} crystallizes in the noncentrosymmetric structure, which show obvious size effects of lanthanides on the crystal structures of these two compounds. Ce{sub 4}GaSbS{sub 9} belongs to RE{sub 4}GaSbS{sub 9} (RE=Pr, Nd, Sm, Gd–Ho) structure type with a=13.8834(9) Å, b=14.3004(11) Å, c=14.4102(13) Å, V=2861.0(4) Å{sup 3}. The structure features infinite chains of [Ga{sub 2}Sb{sub 2}S{sub 11}{sup 10–}]{sub ∞} propagating along a direction separated by Ce{sup 3+} cations and S{sup 2−} anions. La{sub 2}Ga{sub 0.33}SbS{sub 5} adopts the family of La{sub 4}FeSb{sub 2}S{sub 10}-related structure with a=7.5193(6) Å, c=13.4126(17) Å, V=758.35(13) Å{sup 3}. Its structure is built up from the alternate stacking of La/Sb/S and La/Ga/S 2D building blocks. The La/Sb/S slabs consist of teeter-totter chains of Sb1S{sub 4} seesaws, which are connected via sharing the apexes of μ{sub 4}-S1. Moreover, La1 is positionally disordered with Sb1 and stabilized in a bicapped trigonal prismatic coordination sphere. Between these La/Sb/S slabs, La2S{sub 8} square antiprisms are connected via edge-sharing into 2D building blocks, creating tetrahedral sites partially occupied by the Ga1 atoms. UV/Vis diffuse reflectance spectroscopy study shows that the optical gap of La{sub 2}Ga{sub 0.33}SbS{sub 5} is about 1.76 eV. - Graphical abstract: Two new quaternary sulfides La{sub 2}Ga{sub 0.33}SbS{sub 5} and Ce{sub 4}GaSbS{sub 9} have been prepared by solid-state reactions. Ce{sub 4}GaSbS{sub 9} crystallizes in RE{sub 4}GaSbS{sub 9} (RE=Pr, Nd, Sm, Gd–Ho) structure type, while La{sub 2}Ga{sub 0.33}SbS{sub 5} belongs to the family of La{sub 4}FeSb{sub 2}S{sub 10}-related structure and exhibits an

  10. Removal of Sb(III and Sb(V by Ferric Chloride Coagulation: Implications of Fe Solubility

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Inam

    2018-04-01

    Full Text Available Coagulation and precipitation appear to be the most efficient and economical methods for the removal of antimony from aqueous solution. In this study, antimony removal from synthetic water and Fe solubility with ferric chloride (FC coagulation has been investigated. The effects of pH, FC dosage, initial antimony loading and mixed Sb(III, Sb(V proportions on Fe solubility and antimony removal were studied. The results showed that the Sb(III removal efficiency increased with the increase of solution pH particularly due to an increase in Fe precipitation. The Sb(V removal was influenced by the solution pH due to a change in Fe solubility. However, the Fe solubility was only impaired by the Sb(III species at optimum pH 7. The removal efficiencies of both Sb species were enhanced with an increase in FC dose. The quantitative analysis of the isotherm study revealed the strong adsorption potential of Sb(III on Fe precipitates as compared to Sb(V. Furthermore, the removal behavior of antimony was inhibited in mixed proportion with high Sb(V fraction. In conclusion, this study contributes to better understanding the fate of Sb species, their mobilities, and comparative removal behavior, with implications for Fe solubility using ferric chloride in different aqueous environments.

  11. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

    Science.gov (United States)

    Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2017-07-01

    The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

  12. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  13. Study of 5f electron based filled skutterudite compound EuFe{sub 4}Sb{sub 12}, a thermoelectric (TE) material: FP-LAPW method

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, A., E-mail: amitshan2009@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India); Rai, D.P., E-mail: dibyaprakashrai@gmail.com [Beijing Computational Science Research Center, 3 Heqing Road, Beijing 100084 (China); Khenata, R. [Laboratoire de Physique Quantique et de Modlisation Mathmatique (LPQ3M), Dpartement de Technologie, Universit de Mascara, 29000 Mascara (Algeria); Maibam, J. [Department of Physics, Assam University, Silchar 788011 (India); Sandeep, E-mail: sndp.chettri@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India); Thapa, R.K., E-mail: r.k.thapa@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India)

    2015-01-15

    Highlights: • The compound EuFe{sub 4}Sb{sub 12} shows a semi-metallic behavior with pseudo gap. • The inherent dense band near E{sub F} facilitate the charge carriers. • The magnetic moment within LSDA and mBJ are underestimated. • The inclusion of onsite Coulomb repulsion (U) in LSDA has improved the result. • The results obtained from LSDA + U are consistent with the experimental data. - Abstract: We have studied the elastic, electronic and magnetic properties along with the thermoelectric properties of an undoped filled skutterudite EuFe{sub 4}Sb{sub 12} using full-potential linearized augmented plane wave (FP-LAPW) method. The LSDA, LSDA + U and a new exchange-correlation functional called modified Becke Johnson (mBJ) potential based on density functional theory (DFT) were used for studying material properties. The Eu-f and Fe-d are strongly correlated elements thus the inclusion of Coulomb repulsion (U) expected to give an exact ground state properties. The exchange-splitting of Eu-4f states were analyzed to explain the ferromagnetic behavior of EuFe{sub 4}Sb{sub 12} (half-metallic behavior). The numerical values of isotropic elastic parameters and related properties are estimated in the framework of the Voigt–Reuss–Hill approximation. The calculation of thermal transport properties at various temperature shows the high value of Seebeck coefficient and figure of merit (ZT) = 0.25 at room temperature in consistent to the experimental results.

  14. Radioiodinated SB 207710 as a radioligand in vivo: imaging of brain 5-HT{sub 4} receptors with SPET

    Energy Technology Data Exchange (ETDEWEB)

    Pike, Victor W. [MRC Cyclotron Unit, Imperial College School of Medicine, Hammersmith Hospital, Ducane Road, W12 0NN, London (United Kingdom); PET Radiopharmaceutical Sciences Section, Molecular Imaging Branch, National Institute of Mental Health, National Institutes of Health, Building 10, Room B3 C346A, 10 Center Drive, MD 20892-1003, Bethesda (United States); Halldin, Christer; Nobuhara, Kenji; Swahn, Carl-Gunnar; Karlsson, Per; Olsson, Hans; Larsson, Stig; Schnell, Per-Olof; Farde, Lars [Department of Clinical Neuroscience, Psychiatry Section, Karolinska Institutet, Karolinska Hospital, 17176, Stockholm (Sweden); Hiltunen, Julka [MAP Medical Technologies, Oy, Tikkakoski (Finland); Mulligan, Rachel S. [MRC Cyclotron Unit, Imperial College School of Medicine, Hammersmith Hospital, Ducane Road, W12 0NN, London (United Kingdom); Institute of Psychiatry, SE 8AF, De Crespigny Park, Denmark Hill, London (United Kingdom); Centre for PET, Austin and Repatriation Medical Centre, Studley Road, Melbourne VIC 3084 (Australia); Hume, Susan P.; Hirani, Ella [MRC Cyclotron Unit, Imperial College School of Medicine, Hammersmith Hospital, Ducane Road, W12 0NN, London (United Kingdom); Imaging Research Solutions Ltd., Cyclotron Building, Hammersmith Hospital, Ducane Road, W12 0NN, London (United Kingdom); Whalley, Jaqueline [MRC Cyclotron Unit, Imperial College School of Medicine, Hammersmith Hospital, Ducane Road, W12 0NN, London (United Kingdom); Pilowsky, Lyn S. [Institute of Psychiatry, SE 8AF, De Crespigny Park, Denmark Hill, London (United Kingdom); Institute of Nuclear Medicine, Royal Free and University College, Medical School, Mortimer Street, W1N 8AA, London (United Kingdom); Ell, Peter J. [Institute of Nuclear Medicine, Royal Free and University College, Medical School, Mortimer Street, W1N 8AA, London (United Kingdom)

    2003-11-01

    Single-photon emission tomography (SPET) and positron emission tomography (PET), when coupled to suitable radioligands, are uniquely powerful for investigating the status of neurotransmitter receptors in vivo. The serotonin subtype-4 (5-HT{sub 4}) receptor has discrete and very similar distributions in rodent and primate brain. This receptor population may play a role in normal cognition and memory and is perhaps perturbed in some neuropsychiatric disorders. SB 207710 [(1-butyl-4-piperidinylmethyl)-8-amino-7-iodo-1,4-benzodioxan-5-carboxylate] is a selective high-affinity antagonist at 5-HT{sub 4} receptors. We explored radioiodinated SB 207710 as a possible radioligand for imaging 5-HT{sub 4} receptors in vivo. Rats were injected intravenously with iodine-125 labelled SB 207710, euthanised at known times and dissected to establish radioactivity content in brain tissues. Radioactivity entered brain but cleared rapidly and to a high extent from blood and plasma. Between 45 and 75 min after injection, the ratios of radioactivity concentration in each of 12 selected brain tissues to that in receptor-poor cerebellum correlated with previous measures of 5-HT{sub 4} receptor density distribution in vitro. The highest ratio was about 3.4 in striatum. SB 207710 was labelled with iodine-123 by an iododestannylation procedure. A cynomolgus monkey was injected intravenously with [{sup 123}I]SB 207710 and examined by SPET. Maximal whole brain uptake of radioactivity was 2.3% of the injected dose at 18 min after radioligand injection. Brain images acquired between 9 and 90 min showed high radioactivity uptake in 5-HT{sub 4} receptor-rich regions, such as striatum, and low uptake in receptor-poor cerebellum. At 169 min the ratio of radioactivity concentration in striatum to that in cerebellum was 4.0. In a second SPET experiment, the cynomolgus monkey was pretreated with a selective 5-HT{sub 4} receptor antagonist, SB 204070, at 20 min before [{sup 123}I]SB 207710 injection

  15. Giant dielectric response in (Sr, Sb) codoped CaCu3Ti4O12 ceramics: A novel approach

    Science.gov (United States)

    Pradhan, M. K.; Rao, T. Lakshmana; Karna, Lipsarani; Dash, S.

    2018-04-01

    The CaCu3Ti4O12 (CCTO) remains as the best material for practical applications due to its high dielectric constant. To improve further the dielectric properties of CCTO to several orders in magnitude, a novel approach is adopted by codoping of Sr, Sb ions. The ceramic samples were fabricated by the conventional solid state route. The structure, morphology and detail dielectric properties were investigated systematically. All the samples crystalizes in a cubic symmetry with Im-3 space group. Sr substituted in Ca site can effectively suppress the grain growth, achieving a fine grained ceramic structure; however the grain size decreased slightly as Sb concentration increased further; whereas the dielectric permittivity of the ceramics increased drastically. The giant dielectric response was considered to be closely related with a reduction in the potential barrier height at grain boundaries (GBs) supported by the reduction in the activation energy for the conduction process.

  16. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  17. A new solid solution compound with the Sr{sub 21}Mn{sub 4}Sb{sub 18} structure type. Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Kunz Wille, Elizabeth L.; Cooley, Joya A.; Fettinger, James C.; Kazem, Nasrin; Kauzlarich, Susan M. [California Univ., Davis, CA (United States). Dept. of Chemistry

    2017-09-01

    The title compound with the nominal formula, Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}, was synthesized by Sn-flux. Structure refinement was based on single-crystal X-ray diffractometer data. Employing the exact composition, the formula is Sr{sub 13.23}Eu{sub 7.77}Cd{sub 3.12}Mn{sub 0.88}Sb{sub 18} for the solid solution Sr{sub 21-x}Eu{sub x}Cd{sub 4-y}Mn{sub y}Sb{sub 18}. This phase adopts the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure with site preferences for both Eu and Cd. The structure crystallizes in the monoclinic system in space group C2/m and Z=4: a=18.1522(11), b=17.3096(10), c=17.7691(10) Aa, β=91.9638(8) , 6632 F{sup 2} values, 216 variables, R1=0.0254 and wR2=0.0563. Site selectivity of the elements in this new compound will be discussed in relationship with the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure and other related structure types. Temperature dependent magnetic susceptibility data reveal Curie-Weiss paramagnetism with an experimental moment of 19.3 μ{sub B}/f.u. and a Weiss constant of 0.4 K. Magnetic ordering is seen at low temperatures, with a transition temperature of 3.5 K.

  18. New sulfido antimonates of the heavy alkali metals. Synthesis, crystal structure and chemical bonding of (K/Rb/Cs){sub 3}SbS{sub 3} and Cs{sub 3}SbS{sub 4} . H{sub 2}O; Neue Sulfido-Antimonate der schweren Alkalimetalle. Synthese, Kristallstruktur und chemische Bindung von (K/Rb/Cs){sub 3}SbS{sub 3} und Cs{sub 3}SbS{sub 4} . H{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Schindler, Lisa V.; Schwarz, Michael; Roehr, Caroline [Freiburg Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2013-12-15

    The new sulfido antimonates(III) (Rb/Cs){sub 3}SbS{sub 3} were prepared from the alkali metal sulfides Rb{sub 2}S/Cs{sub 2}S{sub 2} and elemental antimony and sulfur or Sb{sub 2}S{sub 3} at reaction temperatures of about 700 C. The known isotypic potassium compound was similarly synthesized from the elements. The structures of the light-yellow crystals were refined using single-crystal X-ray data. Both compounds are isotypic to the respective Na salt forming the Na{sub 3}AsS{sub 3} structure type (cubic, space group P2{sub 1}3, K/Rb/Cs: a = 947.21(7)/982.28(5)/1025.92(5) pm, Z = 4, R1 = 0.0159/0.0560/0.0582). The {psi}-tetrahedral SbS{sub 3}{sup 3-} anions with Sb-S bond lengths of 242 pm are arranged in a cubic face centered packing, in which the three crystallographically different A{sup +} cations occupy the tetrahedral and octahedral voids, overall exhibiting a distorted octahedral sulfur coordination. The chemical bonding and the characteristics of the stereochemically active lone electron pair have been investigated by means of FP-LAPW band structure calculations. Needle-shaped crystals of the monohydrate of the antimony(V) salt Cs{sub 3}SbS{sub 4} . H{sub 2}O were obtained from a suspension of Sb{sub 2}O{sub 3}, CsOH and elemental sulfur. Cs{sub 3}SbS{sub 4} . H{sub 2}O crystallizes in a new structure type (monoclinic, space group P2{sub 1}/c, a = 987.17(10), b = 994.83(7), c = 1600.46(14) pm, {beta} = 126.895(8) , Z = 4, R1 = 0.0234). As expected, the Sb-S distances (233.1-234.7 pm) in the nearly ideally tetrahedral anion SbS{sub 4}{sup 3-} are considerably shorter than in the antimonates(III) but match the bond lengths in the anhydrous sulfido antimonate(V) Cs{sub 3}SbS{sub 4}. Due to their similar fcc-like anion packing and the stereochemically active lone electron pair of Sb in the antimonates(III), the whole series of compounds A{sub 3}Sb{sup III,V}S{sub 3/4} shows a uniform structure relation, which is elucidated using crystallographic group

  19. First-principles study of electronic structure of CuSbS{sub 2} and CuSbSe{sub 2} photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, T., E-mail: tmaeda@ad.ryukoku.ac.jp; Wada, T.

    2015-05-01

    We studied the features of CuSbS{sub 2} (CAS) and CuSbSe{sub 2} (CASe), two proposed photovoltaic compounds, and clarified their electronic structures by first-principles calculations and compared them to the chalcopyrite-type CuInSe{sub 2} results. For both CAS and CASe, the calculated enthalpies of formation of the chalcostibite phases were considerably lower than those of the chalcopyrite phases. Therefore, we considered that the chalcostibite phase is more stable for CAS and CASe. In their band structure calculated with the HSE06 hybrid functional, the valence band maxima of CAS and CASe were located at the Γ-point, and the conduction band minima were located at the R-point. Their second lowest conduction band was located at the Γ-point, whose energy level nearly equaled the R-point. For CAS (CASe), the partial density of the states shows the character of the Cu 3d and S 3p (Se 4p) orbitals at the top of the valence bands and the Sb 5p and S 3p (Se 4p) orbitals at the bottom of the conduction bands. The conduction bands of CAS and CASe have a p-orbital character (Sb 5p) that differs from the s-orbital character (In 5s) of CuInSe{sub 2}. It is for the reason that CAS and CASe do not have a chalcopyrite structure but a chalcostibite-type structure. The calculated absorption coefficient of CuSbS{sub 2} (10{sup 4}-10{sup 5} cm{sup −1}) is comparable to that of CuInSe{sub 2}. - Highlights: • We studied the features of CuSbS{sub 2} and CuSbSe{sub 2}, newly proposed photovoltaic compounds. • Chalcostibite phase is more stable in CuSbS{sub 2} and CuSbSe{sub 2}. • Band structures of CuSbS{sub 2} and CuSbS{sub 2} were calculated with HSE06 hybrid functional. • Absorption coefficient of chalcostibite-type CuSbS{sub 2} is comparable to that of CuInSe{sub 2}.

  20. Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

    2009-05-01

    The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

  1. Evolution of Thermoelectric Properties of Zn4Sb3 Prepared by Mechanical Alloying and Different Consolidation Routes

    Directory of Open Access Journals (Sweden)

    Pee-Yew Lee

    2018-05-01

    Full Text Available In this research, a method combining the mechanical alloying with the vacuum sintering or hot pressing was adopted to obtain the compact of β-Zn4Sb3. Pure zinc and antimony powders were used as the starting material for mechanical alloying. These powders were mixed in the stoichiometry ratio of 4 to 3, or more Zn-rich. Single phase Zn4Sb3 was produced using a nominally 0.6 at. % Zn rich powder. Thermoelectric Zn4Sb3 bulk specimens have been fabricated by vacuum sintering or hot pressing of mechanically alloyed powders at various temperatures from 373 to 673 K. For the bulk specimens sintering at high temperature, phase transformation of β-Zn4Sb3 to ZnSb and Sb was observed due to Zn vaporization. However, single-phase Zn4Sb3 bulk specimens with 97.87% of theoretical density were successfully produced by vacuum hot pressing at 473 K. Electric resistivity, Seebeck coefficient, and thermal conductivity were evaluated for the hot pressed specimens from room temperature to 673 K. The results indicate that the Zn4Sb3 shows an intrinsic p-type behavior. The increase of Zn4Sb3 phase ratio can increase Seebeck coefficient but decrease electric conductivity. The maximum power factor and figure of merit (ZT value were 1.31 × 10−3 W/mK2 and 0.81 at 600 K, respectively. The ZT value was lower than that reported in the available data for materials prepared by conventional melt growth and hot pressed methods, but higher than the samples fabricated by vacuum melting and heat treatment techniques.

  2. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

    2014-10-14

    The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

  3. Sb(III)-Imprinted Organic-Inorganic Hybrid Sorbent Prepared by Hydrothermal-Assisted Surface Imprinting Technique for Selective Adsorption of Sb(III)

    Science.gov (United States)

    Zhang, Dan; Zhao, Yue; Xu, Hong-Bo

    2018-03-01

    Sb(III)-imprinted organic-inorganic hybrid sorbent was prepared by hydrothermal-assisted surface imprinting technique and was characterized by Fourier transform infrared spectroscopy, scanning electron microscopy coupled to an energy dispersive spectrometer and N2 adsorption/desorption isotherms. Hydrothermal-assisted process can improve the selectivity of the Sb(III)-imprinted hybrid sorbent for Sb(III) due to stable control of temperature and pressure. The Sb(III)-imprinted hybrid sorbent IIS indicated higher selectivity for Sb(III), had high static adsorption capacity of 37.3 mg g-1 for Sb(III), displayed stable adsorption capacity in pH range from 4 to 8, reached an rapid adsorption equilibrium within 30 min. According to the correlation coefficient ( r 2 > 0.99), the experimental data fitted better the pseudo-second-order kinetic model and Langmuir equilibrium isotherm.

  4. The equilibrium diagram and some properties of alloys Gd5Sb3-Tb5Sb3 system

    International Nuclear Information System (INIS)

    Azizov, Yu.S.; Abulkhaev, V.D.; Ganiev, I.N.

    2001-01-01

    The purpose of present work is investigation equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system in total range of concentrations. Equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system investigated by methods of difference-thermal, roentgen-phase and metallographic analyses. For the first time on the base of difference-thermal, roentgen-phase and metallographic analyses was formed the equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system. Was determined the cristal-chemical parameters of solid solutions with general formula Gd x Tb 5 - x Sb 3

  5. Synthesis and Study of Electrical Properties of SbTeI

    Directory of Open Access Journals (Sweden)

    Harish K. Dubey

    2014-01-01

    Full Text Available Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature (>300 K, it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 1016 cm−3 and 1.01 cm2/(V·s, respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.

  6. Preparation and thermopower of new mischmetal-based partially filled skutterudites Mm yFe4-x(Co/Ni) xSb12

    International Nuclear Information System (INIS)

    Bourgoin, B.; Berardan, D.; Alleno, E.; Godart, C.; Rouleau, O.; Leroy, E.

    2005-01-01

    We report on sample preparation and electron probe microanalysis (EPMA) in the series Mm y Fe 4-x (Co/Ni) x Sb 12 with Mm being mischmetal. We show the possibility of preparing mischmetal-based partially filled skutterudites without any segregation of the rare-earths. Room temperature thermopower is similar in mischmetal-based skutterudites to cerium- or ytterbium-based partially filled skutterudites

  7. Phase transitions in thin films of Sn-Sb-Se system

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

    1998-01-01

    The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

  8. Oral administration of the 5-HT6 receptor antagonists SB-357134 and SB-399885 improves memory formation in an autoshaping learning task.

    Science.gov (United States)

    Perez-García, Georgina; Meneses, Alfredo

    2005-07-01

    In this work we aimed to re-examine the 5-HT6 receptor role, by testing the selective antagonists SB-357134 (1-30 mg/kg p.o.) and SB-399885 (1-30 mg/kg p.o.) during memory consolidation of conditioned responses (CR%), in an autoshaping Pavlovian/instrumental learning task. Bioavailability, half-life and minimum effective dose to induce inappetence for SB-357134 were 65%, 3.4 h, and 30 mg/kg p.o., and for SB-399885 were 52%, 2.2 h, and 50 mg/kg p.o., respectively. Oral acute and chronic administration of either SB-357134 or SB-399885 improved memory consolidation compared to control groups. Acute administration of SB-357134, at 1, 3, 10 and 30 mg/kg, produced a CR% inverted-U curve, eliciting the latter dose a 7-fold increase relative to saline group. Acute injection of SB-399885 produced significant CR% increments, being 1 mg/kg the most effective dose. Repeated administration (7 days) of either SB-357134 (10 mg/kg) or SB-399885 (1 mg/kg) elicited the most significant CR% increments. Moreover, modeling the potential therapeutic benefits of 5-HT6 receptor blockade, acute or repeated administration of SB-399885, at 10 mg/kg reversed memory deficits produced by scopolamine or dizocilpine, and SB-357134 (3 and 10 mg/kg) prevented amnesia and even improved performance. These data support the notion that endogenously 5-HT acting, via 5-HT6 receptor, improves memory consolidation.

  9. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Guseynov, R. R.; Tanriverdiyev, V. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede [Stony Brook, Stony Brook University (United States); Aliyeva, Ye. N.; Aliguliyeva, Kh. V.; Abdullayev, N. A., E-mail: abnadir@mail.ru; Mamedov, N. T. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

    2017-04-15

    Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

  10. Analysis of the 4d7 (4f + 6p) and 4p54d9 configurations of Sn VII, Sb VIII and Te IX

    International Nuclear Information System (INIS)

    Azarov, V.I.; Joshi, Y.N.; Churilov, S.S.; Ryabtsev, A.N.

    1994-01-01

    The spectra of tin, antimony and tellerium were photographed in the 120-200 A region on 10.7 m and 3 m grazing incidence spectrographs using a triggered spark source. The 4d 8 -4d 7 (4f + 6p) + 4p 5 4d 9 transitions of Sn VII, Sb VIII and Te IX were investigated. In the Sn VII spectrum 109 new lines were classified in the 152-192 A region and 34 new levels were established, in the Sb VIII spectrum 78 new lines were classified in the 138-158 A region and 21 new levels were established, and in the Te IX 76 new lines were classified in the 121-139 A region and 21 new levels were established. Strong configuration interaction among the 4d 7 (np + mf), and 4p 5 4d 9 (n = 5, 6; m = 4, 5) configurations was observed. Least-squares-fitting (LSF) parametric calculations involving configuration interaction were carried out to interpret the observed spectra. (orig.)

  11. Effect of lanthanide contraction on the mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien): Syntheses and characterizations of lanthanide complexes with a tetraelenidoantimonate ligand

    International Nuclear Information System (INIS)

    Zhao Jing; Liang Jingjing; Pan Yingli; Zhang Yong; Jia Dingxian

    2011-01-01

    Mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) (Ln=lanthanide, en=ethylenediamine, dien=diethylenetriamine, trien=triethylenetetramine) were investigated under solvothermal conditions, and novel mixed-coordinated lanthanide(III) complexes [Ln(en) 2 (dien)(η 2 -SbSe 4 )] (Ln=Ce(1a), Nd(1b)), [Ln(en) 2 (dien)(SbSe 4 )] (Ln=Sm(2a), Gd(2b), Dy(2c)), [Ln(en)(trien)(μ-η 1 ,η 2 -SbSe 4 )] ∞ (Ln=Ce(3a), Nd(3b)) and [Sm(en)(trien)(η 2 -SbSe 4 )] (4a) were prepared. Two structural types of lanthanide selenidoantimonates were obtained across the lanthanide series in both en+dien and en+trien systems. The tetrahedral anion [SbSe 4 ] 3- acts as a monodentate ligand mono-SbSe 4 , a bidentate chelating ligand η 2 -SbSe 4 or a tridentate bridging ligand μ-η 1 ,η 2 -SbSe 4 to the lanthanide(III) center depending on the Ln 3+ ions and the mixed ethylene polyamines, indicating the effect of lanthanide contraction on the structures of the lanthanide(III) selenidoantimonates. The lanthanide selenidoantimonates exhibit semiconducting properties with E g between 2.08 and 2.51 eV. - Graphical Abstract: Two structural types of lanthanide(III) selenidoantimonates are formed in both en-dien and en-trien mixed polyamines across lanthanide series, indicating the lanthanide contraction effect on the structures of the lanthanide(III) selenidoantimonates. Highlights: → Two structural types of lanthanide selenidoantimonates are prepared across the lanthanide series in both Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) systems. → The [SbSe 4 ] 3- anion acts as a mono-SbSe 4 , a η 2 -SbSe 4 or a μ-η 1 ,η 2 -SbSe 4 ligand to the Ln 3+ ions. → The soft base ligand [SbSe 4 ] 3- can be controlled to coordinate to the Ln 3+ ions with en+dien and en+trien as co-ligands.

  12. Complexation of HSA with different forms of antimony (Sb): An application of fluorescence spectroscopy

    International Nuclear Information System (INIS)

    Song, Wenjuan; Zhang, Daoyong; Pan, Xiangliang; Lee, Duu-Jong

    2013-01-01

    Antimony (Sb) pollution has been of a great environmental concern in some areas in China. Sb enters human body via drinking water, inhalation and food chain, unavoidably interacts with human serum albumin (HSA) in blood plasma, and consequently does harm to human health. The harmful effects of Sb on human health depend on the Sb species and their binding ability to HSA. In the present study, binding of three forms of Sb with HSA was investigated by excitation-emission matrix (EEM) spectroscopy. All of antimony potassium tartrate, antimony trichloride and potassium pyroantimonate quenched fluorescence of HSA. Values of conditional stability constant K a (×10 5 /M) for Sb and HSA systems were 8.13–9.12 for antimony potassium tartrate, 2.51–4.27 for antimony trichloride and 3.63–9.77 for potassium pyroantimonate. The binding constant K b (×10 4 /M) values of HSA with antimony potassium tartrate, antimony trichloride and potassium pyroantimonate were 0.02–0.07, 3.55–5.01, and 0.07–1.08, respectively. There was one independent class of binding site for antimony trichloride towards HSA. There was more than one Sb binding site and negative cooperativity between multiple binding sites for potassium pyroantimonate and antimony potassium tartrate towards HSA. The binding ability of HSA to complex Sb followed the order: antimony trichloride>potassium pyroantimonate>antimony potassium tartrate. -- Highlights: ► The first study reporting interaction of Sb with HSA. ► Sb can effectively quench the fluorescence of HSA. ► The binding ability of HSA to Sb was dependent on the form of Sb. ► Binding differences indicate differences in toxicity of various forms Sb to human. ► HAS-Sb binding parameters are important for understanding toxicity of Sb

  13. Complexation of HSA with different forms of antimony (Sb): An application of fluorescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Song, Wenjuan [State Key Laboratory of Desert and Oasis Ecology, Xinjiang Institute of Ecology and Geography, Chinese Academy of Sciences, Urumqi 830011 (China); Zhang, Daoyong [State Key Laboratory of Environmental Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002 (China); Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Pan, Xiangliang, E-mail: xlpan@ms.xjb.ac.cn [State Key Laboratory of Desert and Oasis Ecology, Xinjiang Institute of Ecology and Geography, Chinese Academy of Sciences, Urumqi 830011 (China); Lee, Duu-Jong [State Key Laboratory of Desert and Oasis Ecology, Xinjiang Institute of Ecology and Geography, Chinese Academy of Sciences, Urumqi 830011 (China); Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2013-04-15

    Antimony (Sb) pollution has been of a great environmental concern in some areas in China. Sb enters human body via drinking water, inhalation and food chain, unavoidably interacts with human serum albumin (HSA) in blood plasma, and consequently does harm to human health. The harmful effects of Sb on human health depend on the Sb species and their binding ability to HSA. In the present study, binding of three forms of Sb with HSA was investigated by excitation-emission matrix (EEM) spectroscopy. All of antimony potassium tartrate, antimony trichloride and potassium pyroantimonate quenched fluorescence of HSA. Values of conditional stability constant K{sub a} (×10{sup 5}/M) for Sb and HSA systems were 8.13–9.12 for antimony potassium tartrate, 2.51–4.27 for antimony trichloride and 3.63–9.77 for potassium pyroantimonate. The binding constant K{sub b} (×10{sup 4}/M) values of HSA with antimony potassium tartrate, antimony trichloride and potassium pyroantimonate were 0.02–0.07, 3.55–5.01, and 0.07–1.08, respectively. There was one independent class of binding site for antimony trichloride towards HSA. There was more than one Sb binding site and negative cooperativity between multiple binding sites for potassium pyroantimonate and antimony potassium tartrate towards HSA. The binding ability of HSA to complex Sb followed the order: antimony trichloride>potassium pyroantimonate>antimony potassium tartrate. -- Highlights: ► The first study reporting interaction of Sb with HSA. ► Sb can effectively quench the fluorescence of HSA. ► The binding ability of HSA to Sb was dependent on the form of Sb. ► Binding differences indicate differences in toxicity of various forms Sb to human. ► HAS-Sb binding parameters are important for understanding toxicity of Sb.

  14. Structure, microstructure and microhardness of rapidly solidified Smy(FexNi1-x)4Sb12 (x = 0.45, 0.50, 0.70, 1) thermoelectric compounds

    Science.gov (United States)

    Artini, C.; Castellero, A.; Baricco, M.; Buscaglia, M. T.; Carlini, R.

    2018-05-01

    Skutterudites are interesting compounds for thermoelectric applications. The main drawback in the synthesis of skutterudites by solidification of the melt is the occurrence of two peritectic reactions requiring long annealing times to form a single phase. Aim of this work is to investigate an alternative route for synthesis, based on rapid solidification by planar flow casting. The effect of cooling rate on phases formation and composition, as well as on structure, microstructure and mechanical properties of the filled Smy(FexNi1-x)4Sb12 (x = 0.45, 0.50, 0.70, 1) skutterudites was studied. Conversely to slowly cooled ingots, rapidly quenched ribbons show skutterudite as the main phase, suggesting that deep undercooling of the liquid prevents the nucleation of high temperature phases, such as (Fe,Ni)Sb and (Fe,Ni)Sb2. In as-quenched samples, a slightly out of equilibrium Sm content is revealed, which does not alter the position of the p/n boundary; nevertheless, it exerts an influence on crystallographic properties, such as the cell parameter and the shape of the Sb4 rings in the structure. As-quenched ribbons show a fine microstructure of the skutterudite phase (grain size of 2-20 μm), which only moderately coarsens after annealing at 873 K for 4 days. Vickers microhardness values (350-400 HV) of the skutterudite phase in as-quenched ribbons are affected by the presence of softer phases (i.e. Sb), which are homogeneously and finely dispersed within the sample. The skutterudite hardens after annealing as a consequence of a moderate grain growth, which limits the matrix effect due to the presence of additional phases.

  15. Influence of the nucleobase on the physicochemical characteristics and biological activities of Sb{sup V}-ribonucleoside complexes

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, Claudio S.; Demicheli, Cynthia, E-mail: demichel@netuno.lcc.ufmg.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Rocha, Iara C.M. da; Melo, Maria N. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Parasitologia; Monte Neto, Rubens L.; Frezard, Frederic [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisiologia e Biofisica

    2010-07-01

    The influence of the nucleobase (uracyl, U; cytosine, C; adenine, A; guanine, G) on the physicochemical characteristics and in vitro biological activities of Sb{sup V}-ribonucleoside complexes has been investigated. The 1:1 Sb-U and Sb-C complexes were characterized by NMR and ESI-MS spectroscopies and elemental analysis. The stability constant and the apparent association and dissociation rate constants of 1:1 Sb{sup V}-U, Sb{sup V}-C and Sb{sup V}-A complexes were determined. Although Sb{sup V} most probably binds via oxygen atoms to the same 2' and 3' positions in the different nucleosides, the ribose conformational changes and the physicochemical characteristics of the complex depend on the nucleobase. The nucleobase had a strong influence on the cytotoxicity against macrophages and the antileishmanial activity of the Sb{sup V}-ribonucleoside complexes. The Sb{sup V}-purine complexes were more cytotoxic and more effective against Leishmania chagasi than the Sb{sup V}-pyrimidine complexes, supporting the model that the interaction of Sb{sup V} with purine nucleosides may mediate the antileishmanial activity of pentavalent antimonial drugs. (author)

  16. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Oxygen-doped Sb{sub 4}Te phase change films for high-temperature data retention and low-power application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Mathematics and Physics, Jiangsu Teachers University of Technology, Changzhou 213001 (China); Sun, Mingcheng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

    2013-02-25

    Highlights: Black-Right-Pointing-Pointer O-doped Sb{sub 4}Te phase-change films were reported. Black-Right-Pointing-Pointer The amorphous-to-crystalline transitions of O-doped Sb{sub 4}Te films were studied. Black-Right-Pointing-Pointer By doping oxygen, the stability of Sb{sub 4}Te films is improved greatly. Black-Right-Pointing-Pointer The resistance of the Sb{sub 4}Te films increases by doping oxygen. - Abstract: The amorphous-to-crystalline transitions of oxygen-doped Sb{sub 4}Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb{sub 4}Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29 Degree-Sign C of undoped Sb{sub 4}Te film to 102 Degree-Sign C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge{sub 2}Sb{sub 2}Te{sub 5} film.

  18. Study of conformational changes and protein aggregation of bovine serum albumin in presence of Sb(III) and Sb(V).

    Science.gov (United States)

    Verdugo, Marcelo; Ruiz Encinar, Jorge; Costa-Fernández, José Manuel; Menendez-Miranda, Mario; Bouzas-Ramos, Diego; Bravo, Manuel; Quiroz, Waldo

    2017-01-01

    Antimony is a metalloid that affects biological functions in humans due to a mechanism still not understood. There is no doubt that the toxicity and physicochemical properties of Sb are strongly related with its chemical state. In this paper, the interaction between Sb(III) and Sb(V) with bovine serum albumin (BSA) was investigated in vitro by fluorescence spectroscopy, and circular dichroism (CD) under simulated physiological conditions. Moreover, the coupling of the separation technique, asymmetric flow field-flow fractionation, with elemental mass spectrometry to understand the interaction of Sb(V) and Sb(III) with the BSA was also used. Our results showed a different behaviour of Sb(III) vs. Sb(V) regarding their effects on the interaction with the BSA. The effects in terms of protein aggregates and conformational changes were higher in the presence of Sb(III) compared to Sb(V) which may explain the differences in toxicity between both Sb species in vivo. Obtained results demonstrated the protective effect of GSH that modifies the degree of interaction between the Sb species with BSA. Interestingly, in our experiments it was possible to detect an interaction between BSA and Sb species, which may be related with the presence of labile complex between the Sb and a protein for the first time.

  19. Characteristics of phase transition and separation in a In-Ge-Sb-Te system

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sung Jin [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Jang, Moon Hyung [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Park, Seung-Jong [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Cho, Mann-Ho, E-mail: mh.cho@yonsei.ac.kr [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Ko, Dae-Hong [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer InGeSbTe films were fabricated via co-deposition stoichiometric GST and IST targets. Black-Right-Pointing-Pointer As the amount of IST was increased in InGeSbTe, the value for V{sub th} and the phase transition temperature were increased. Black-Right-Pointing-Pointer The phase separation in InGeSbTe is caused by differences in the enthalpy change for formation and different atomic concentrations. - Abstract: In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) and In{sub 3}Sb{sub 1}Te{sub 2} (IST) as targets. The phase change characteristics of the resulting films were then investigated by electrical measurements, including static testing, in situ 4-point R{sub s} measurements, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The threshold voltage of the films increased, with increasing levels of IST. This phenomenon is consistent with the increased crystallization temperature in X-ray data and in situ 4-point R{sub s} data. In addition, in In{sub 28}Ge{sub 12}Sb{sub 26}Te{sub 34}, multiple V{sub th} values with a stepwise change are observed. The minimum time for the crystallization of InGeSbTe films was shorter than that for GST. X-ray data and Raman data for the crystalline structure show that phase separation to In{sub 2}Te{sub 3} occurred in all of the InGeSbTe samples after annealing at 350 Degree-Sign C. Moreover, in the case of InGeSbTe films with high concentrations of In (28 at.%), Sb phase separation was also observed. The observed phases indicate that the origin of the phase separation of InGeSbTe films is from the enthalpy change of formation and differences in Ge-Te, In-Te, Sb-Te, In-Sb and In-In bond energies.

  20. Unprecedented connection mode of [V{sub 16}Sb{sub 4}O{sub 42}(H{sub 2}O)]{sup 8-} cluster anions by Mn{sup 2+} centered complexes. Solvothermal synthesis and properties of {[Mn(teta)]_4V_1_6Sb_4O_4_2(H_2O)}{sub n}.[(H{sub 2}O){sub 12}]{sub n}

    Energy Technology Data Exchange (ETDEWEB)

    Rasmussen, Maren; Naether, Christian; Bensch, Wolfgang [Institute of Inorganic Chemistry, Christian-Albrechts-University of Kiel (Germany); Leusen, Jan van; Koegerler, Paul [Institute of Inorganic Chemistry, RWTH Aachen University, Aachen (Germany)

    2017-11-17

    The new compound {[Mn(teta)]_4V_1_6Sb_4O_4_2}{sub n}.[(H{sub 2}O){sub 12}]{sub n} (teta = triethylenetetraamine) was synthesized under solvothermal conditions. The crystal structure features the high nuclearity [V{sub 16}{sup IV}Sb{sub 4}{sup III}O{sub 42}(H{sub 2}O)]{sup 8-} cluster anion, which consists of two rings composed of 8 edge-sharing VO{sub 5} polyhedra. The rings are perpendicular to each other generating four niches, which are occupied by two VO{sub 5} pyramids and two handle-like Sb{sub 2}O{sub 5} units. The two unique anions are each surrounded by eight Mn{sup 2+} centered complexes via Mn-O{sub term}-V bonds. Such an expansion has never been observed in heterometal polyoxovanadate chemistry. The connection mode between cluster anions and complex cations generates two individual layers stacked onto each other. Between the layers weak Sb..O contacts are observed. The crystal water molecules are mainly located in the empty space between the layers. Upon heating H{sub 2}O molecules are removed, while the crystal structure remains intact. The magnetic behavior is dominated by strong antiferromagnetic exchange interactions between the central V{sup 4+} ions, while the interaction between the cluster anion and central Mn{sup 2+} ions is significantly less pronounced. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. A Summary of Rheology Data For SB3 and SB2/3 Blend Simulant Savannah River Site Wastes

    International Nuclear Information System (INIS)

    KOOPMAN, DAVIDC.

    2004-01-01

    The purpose of this study was to document the rheological measurements made for Sludge Batch 3 (SB3) and the blend of SB3 with Sludge Batch 2 (SB2). These measurements were primarily made on Slurry Mix Evaporator (SME) products, i.e. melter feeds. Some measurements were made on SB2/3 blend Sludge Receipt and Adjustment Tank (SRAT) products. Measurements on radioactive SB3 and SB2/3 samples have been limited to sludge characterization. SB2/3 measurements studied the impact of changing the SRAT acid addition strategy on the SRAT and SME product rheology. SB2/3 measurements also studied the impact of changing the waste loading target (sludge oxides content in glass) of the SME product. SB3 measurements studied the impact of changes in the wash end point and acid addition strategy on the SME product (melter feed) rheology. A summary of the significant findings is given below: SB3 radioactive sludge and blended SB2/3 radioactive sludge were less viscous than SB2 radioactive sludge. SB2/3 b lend sludge is more viscous than SB3 sludge. SB3 simulant SME product rheology was strongly impacted by changing the noble metal concentrations to more closely match those of the qualification sample. This reduction in noble metals produced a lower pH product that was also considerably less viscous. Increased acid addition in the SB2/3 SRAT generally led to less viscous simulant SRAT products. This trend did not persist in the SME products. SME products became more viscous when increased acid was used in the SRAT cycle from 135 per cent up to 170 per cent of stoichiometry, then became less viscous as total acid was increased further to 185 per cent. A significant increase in hydrogen generation occurred between 170 per cent and 185 per cent. The impact of acid addition on SB3 SME products was also variable. The impact of waste loading changes from 31 to 35 to 40 per cent on SB2/3 simulant SME products led to more viscous melter feeds as waste loading increased at constant wt. per cent

  2. Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ruiping [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Liu, Feng [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Chengzhi, E-mail: czhu@rcees.ac.cn [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); He, Zan [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Huijuan; Qu, Jiuhui [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

    2015-12-30

    Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca{sup 2+} and Mn{sup 2+}. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q{sub max,Sb(V)}) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd{sup 2+} exhibited a more significant positive effect than both calcium ion (Ca{sup 2+}) and manganese ion (Mn{sup 2+}). Cd{sup 2+} showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca{sup 2+} and Mn{sup 2+}. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH{sub i}) range from 2 to 9, and Q{sub Sb(V)} decreases whereas Q{sub Cd(II)} increases with elevated pH{sub i}. Their combined values, as expressed by Q{sub Sb(V)+Cd(II)}, amount to about 2 mmol/g and vary slightly in the pH{sub i} range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

  3. Martensitic phase transformations and magnetocaloric effect in Al co-sputtered Ni–Mn–Sb alloy thin films

    International Nuclear Information System (INIS)

    Akkera, Harish Sharma; Choudhary, Nitin; Kaur, Davinder

    2015-01-01

    Highlights: • The Al content leads to a increase in the martensitic transformation temperature. • A maximum ΔS M = 23 mJ/cm 3 K at 300 K was observed in the N 49.8 Mn 32.97 Al 4.43 Sb 12.8 . • The refrigeration capacity RC = 64.4 mJ/cm 3 at 2 T for N 49.8 Mn 32.97 Al 4.43 Sb 12.8 film. - Abstract: We systematically investigated the influence of aluminium (Al) content on the martensitic transformations and magnetocaloric effect (MCE) in Ni–Mn–Sb ferromagnetic shape memory alloy (FSMA) thin films. The temperature-dependent magnetization (M–T) and resistance (R–T) results displayed a monotonic increase in martensitic transformation temperature (T M ) with increasing Al content. From the isothermal magnetization (M–H) curves, a large magnetic entropy change (ΔS M ) of 23 mJ/cm 3 K was observed in N 49.8 Mn 32.97 Al 4.43 Sb 12.8 . A remarkable enhancement of MCE could be attributed to the significant change in the magnetization of Ni–Mn–Sb films with increasing Al content. Furthermore, a high refrigerant capacity (RC) was observed in Ni–Mn–Sb–Al thin films as compared to pure Ni–Mn–Sb. The substitution of Al for Mn in Ni–Mn–Sb thin films with field induced MCE are potential candidates for micro length scale magnetic refrigeration applications where low magnetic fields are desirable

  4. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-12-01

    Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

  5. Can iron plaque affect Sb(III) and Sb(V) uptake by plants under hydroponic conditions

    NARCIS (Netherlands)

    Ji, Ying; Lenz, Markus; Lenz, Markus; Schulin, Rainer; Tandy, Susan

    2018-01-01

    Antimony (Sb) contamination of soils is of concern due to h uman activities such as recycling of Sb containing Pb acid batteries, shooting and mining. However Sb uptake by plants is poorly documented, especially when plants are growing on waterlogged soils and iron plaques form on their roots. The

  6. Reconstructions of the sulfur-passivated InSb (100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Ciochoń, Piotr, E-mail: piotr.ciochon@doctoral.uj.edu.pl; Olszowska, Natalia; Wróbel, Sonia; Kołodziej, Jacek

    2017-04-01

    Highlights: • Two new surface reconstructions of a S-passivated InSb (001) surface are reported. • The reconstructions are obtained through partial loss of surface sulfur. • They are characterized by the thickness of ∼4 Å and good crystallographic ordering. • The reconstructions provide adequate electronic passivation of the surface. - Abstract: We have studied the properties of the InSb (100) surface passivated with sulfur dimers emitted by the solid-state electrochemical cell in ultra-high vacuum. Annealing the passivated surface in the temperature equal to T = 326 °C led to the formation of the c(4 × 8) surface reconstruction, while increasing the temperature to T = 348 °C resulted in the transition to c(4 × 12) reconstruction. To the best of our knowledge these reconstructions have not been reported to date and are characterized by the exceptionally good crystallographic order. XPS studies revealed that there are at least 4 different chemical species of sulfur present on the surface and the estimated thickness of the sulfur layers is equal to around 4 Å. The surface reconstructions are characterized by the lowered intensity of the surface electronic states and resonances near the Fermi level, compared to the clean InSb surface, making them potentially very useful for the fabrication of InSb-based electronic and optoelectronic devices.

  7. New uranium chalcoantimonates, RbU{sub 2}SbS{sub 8} and KU{sub 2}SbSe{sub 8}, with a polar noncentrosymmetric structure

    Energy Technology Data Exchange (ETDEWEB)

    Choi, K S; Kanatzidis, M G

    1999-09-01

    The new compounds, RbU{sub 2}SbS{sub 8} and KU{sub 2}SbSe{sub 8}, were prepared as golden-black, blocklike crystals by the polychalcogenide molten flux method. RbU{sub 2}SbS{sub 8} has a two-dimensional character with layers running perpendicular to the c-axis. The coordination geometry around the U{sup 4+} atoms is best described as a bicapped trigonal prism. The trigonal prisms share triangular faces with neighboring prisms, forming one-dimensional columns along the a-axis. The columns are then joined to construct sheets by sharing capping S atoms. Sb{sup 3+} ions are sitting at the center of a slightly distorted seesaw coordination environment (CN = 4). Rb{sup +} ions are stabilized in 8-coordinate bicapped trigonal prismatic sites. KU{sub 2}SbSe{sub 8} has essentially the same structure as RbU{sub 2}SbS{sub 8}. However, Sb{sup 3+} and K{sup +} ions appear disordered in every other layer resulting in a different unit cell. RbU{sub 2}SbS{sub 8} is a semiconductor with a band gap of 1.38 eV. The band gap of KU{sub 2}SbSe{sub 8} could not be determined precisely due to the presence of overlapping intense f-f transitions in the region (0.5--1.1 eV). The Raman spectra show the disulfide stretching vibration in RbU{sub 2}SbS{sub 8} at 479 cm{sup {minus}1} and the diselenide stretching vibration in KU{sub 2}SbSe{sub 8} at 252 cm{sup {minus}1}. Magnetic susceptibility measurements indicate the presence of U{sup 4+} centers in the compounds. The compounds do not melt below 1,000 C under vacuum.

  8. Polarity-dependent resistance switching in GeSbTe phase-change thin films : The importance of excess Sb in filament formation

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Oosthoek, Jasper L. M.; van den Dool, Pim; Palasantzas, George; Pauza, Andrew

    2009-01-01

    We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with

  9. DWPF simulant CPC studies for SB8

    Energy Technology Data Exchange (ETDEWEB)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  10. DWPF simulant CPC studies for SB8

    International Nuclear Information System (INIS)

    Koopman, D. C.; Zamecnik, J. R.

    2013-01-01

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  11. Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Mooney, P. M.; Jiang, Zenan; Basile, A. F. [Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada); Zheng, Yongju; Dhar, Sarit [Physics Department, Auburn University, Auburn, Alabama 36849 (United States)

    2016-07-21

    To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

  12. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  13. A Novel Framework Antimony (III) Phosphate: Synthesis and Structure of NaSb 3O 2(PO 4) 2

    Science.gov (United States)

    Adair, Brian A.; de Delgado, Graciela Díaz; Miguel Delgado, J.; Cheetham, Anthony K.

    2000-04-01

    The antimony (III) phosphate, NaSb3O2(PO4)2, is a framework structure built from SbIII and PV centers; orthorhombic, space group Pca21 (No. 29), a=13.944(3), b=6.6822(13), c=20.886(4) Å, V=1946.1(7) Å3, Z=8. Stereochemically active lone pairs of electrons associated with SbIIIO5 and SbIIIO4 polyhedra point into eight-ring channels, approximately 5×7 Å2, which dominate the architecture of the title compound. Charge-compensating sodium cations occupy the remaining space in the channels.

  14. Enhanced electrical transport and thermoelectric properties in Ni doped Cu3SbSe4

    Science.gov (United States)

    Kumar, Aparabal; Dhama, P.; Das, Anish; Sarkar, Kalyan Jyoti; Banerji, P.

    2018-05-01

    In this study, we report the enhanced thermoelectric performance of Cu3SbSe4 by Ni doping at Cu site. Cu3-xNixSbSe4 (x = 0, 0.01, 0.03, 0.05) were prepared by melt growth, ball milling followed by spark plasma sintering. Structural characterization, phase analysis and surface morphology were carried out using X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Electrical and thermal properties of all the samples were investigated in the temperature range 300 - 650 K. Decrease in electrical resistivity with Ni doping due to increase in carrier concentration with enhanced Seebeck coefficient via increase in density of state near the Fermi level gives a remarkably high power factor. At the same time, thermal conductivity was found to decrease due to increased carrier-phonon scattering and acoustic phonon scattering. Consequently, a remarkable enhancement in the thermoelectric figure of merit (ZT˜ 0.65) of Cu3-xNixSbSe4 was achieved for x = 0.01 sample. Thus, Ni doping is an effective approach to improve the efficiency of Cu3SbSe4.

  15. Nonpeptidic urotensin-II receptor antagonists I: in vitro pharmacological characterization of SB-706375

    Science.gov (United States)

    Douglas, Stephen A; Behm, David J; Aiyar, Nambi V; Naselsky, Diane; Disa, Jyoti; Brooks, David P; Ohlstein, Eliot H; Gleason, John G; Sarau, Henry M; Foley, James J; Buckley, Peter T; Schmidt, Dulcie B; Wixted, William E; Widdowson, Katherine; Riley, Graham; Jin, Jian; Gallagher, Timothy F; Schmidt, Stanley J; Ridgers, Lance; Christmann, Lisa T; Keenan, Richard M; Knight, Steven D; Dhanak, Dashyant

    2005-01-01

    SB-706375 potently inhibited [125I]hU-II binding to both mammalian recombinant and ‘native' UT receptors (Ki 4.7±1.5 to 20.7±3.6 nM at rodent, feline and primate recombinant UT receptors and Ki 5.4±0.4 nM at the endogenous UT receptor in SJRH30 cells). Prior exposure to SB-706375 (1 μM, 30 min) did not alter [125I]hU-II binding affinity or density in recombinant cells (KD 3.1±0.4 vs 5.8±0.9 nM and Bmax 3.1±1.0 vs 2.8±0.8 pmol mg−1) consistent with a reversible mode of action. The novel, nonpeptidic radioligand [3H]SB-657510, a close analogue of SB-706375, bound to the monkey UT receptor (KD 2.6±0.4 nM, Bmax 0.86±0.12 pmol mg−1) in a manner that was inhibited by both U-II isopeptides and SB-706375 (Ki 4.6±1.4 to 17.6±5.4 nM) consistent with the sulphonamides and native U-II ligands sharing a common UT receptor binding domain. SB-706375 was a potent, competitive hU-II antagonist across species with pKb 7.29–8.00 in HEK293-UT receptor cells (inhibition of [Ca2+]i-mobilization) and pKb 7.47 in rat isolated aorta (inhibition of contraction). SB-706375 also reversed tone established in the rat aorta by prior exposure to hU-II (Kapp∼20 nM). SB-706375 was a selective U-II antagonist with ⩾100-fold selectivity for the human UT receptor compared to 86 distinct receptors, ion channels, enzymes, transporters and nuclear hormones (Ki/IC50>1 μM). Accordingly, the contractile responses induced in isolated aortae by KCl, phenylephrine, angiotensin II and endothelin-1 were unaltered by SB-706375 (1 μM). In summary, SB-706375 is a high-affinity, surmountable, reversible and selective nonpeptide UT receptor antagonist with cross-species activity that will assist in delineating the pathophysiological actions of U-II in mammals. PMID:15852036

  16. AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

    2011-01-01

    Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

  17. Spin 1/2 Delafossite Honeycomb Compound Cu5SbO6

    DEFF Research Database (Denmark)

    Climent-Pascual, E.; Norby, Poul; Andersen, Niels Hessel

    2012-01-01

    Cu5SbO6 is found to have a monoclinic, Delafossite-derived structure consisting of alternating layers of O–Cu(I)–O sticks and magnetic layers of Jahn–Teller distorted Cu(II)O6 octahedra in an edge sharing honeycomb arrangement with Sb(V)O6 octahedra. This yields the structural formula Cu(I)3Cu(II...

  18. Preparation and oxidation resistance of single crystalline β-Zn{sub 4}Sb{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hong-xia; Deng, Shu-ping [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Li, De-cong [Photoelectric Engineering College, Yunnan Open University, Kunming 650500 (China); Shen, Lan-xian; Cheng, Feng; Wang, Jin-song [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Deng, Shu-kang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China)

    2016-11-01

    This study prepared a Zn-rich single crystal β-Zn{sub 4}Sb{sub 3} using a Sn flux method based on the stoichiometric ratios of Zn{sub 4.4}Sb{sub 3}Sn{sub 3}. The oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which is of practical importance in the application of the material at high temperatures. Results showed that the prepared sample possessed high electrical transport properties, with a high power factor of 1.67×10{sup −3} W m{sup −1} K{sup −2} at 563 K. The heat treatment in air weakened the electrical conductivity of the single crystalline β-Zn{sub 4}Sb{sub 3}, whereas the Seebeck coefficients were rarely independent of the annealing condition. Eventually, the power factor obtained after the first heating at 523 K for 4 h became comparable to that of the as-prepared sample, although it decreased after the second heating at 573 K for 5 h. Nevertheless, the single crystalline β-Zn{sub 4}Sb{sub 3} still possessed a good thermal stability after the heat treatment process.

  19. Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

    International Nuclear Information System (INIS)

    Miya, S.S.; Wagener, V.; Botha, J.R.

    2012-01-01

    The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga 1−x In x Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga 1−x In x Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga 1−x In x Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

  20. Ternary CaCu4P2-type pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb)

    Science.gov (United States)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-08-01

    Four ternary pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 °C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg4Pn2 adopt the trigonal CaCu4P2-type structure (Pearson symbol hR21, space group R3¯m, Z=3; a=4.5555(6) Å, c=24.041(3) Å for SrAg4As2; a=4.5352(2) Å, c=23.7221(11) Å for EuAg4As2; a=4.7404(4) Å, c=25.029(2) Å for SrAg4Sb2; a=4.7239(3) Å, c=24.689(2) Å for EuAg4Sb2), which can be derived from the trigonal CaAl2Si2-type structure of the isoelectronic zinc-containing pnictides AZn2Pn2 by insertion of additional Ag atoms into trigonal planar sites within [M2Pn2]2- slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg4As2 and SrAg4Sb2 revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals.

  1. The Quantum Chemistry Calculation and Thermoelectrics of Bi-Sb-Te Series

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The density function theory and discrete variation method(DFT-DVM) was used to study correlation between composition, structure, chemical bond,and property of thermoelectrics of Bi-Sb-Te series.8 models of Bi20-xSbxTe32(x=0,2,6,8,12,14,18 and 20) were calculated.The results show that there is less difference in the ionic bonds between Te(Ⅰ)-Bi(Sb) and Te(Ⅱ)-Bi(Sb), but the covalent bond of Te(Ⅰ)-Bi(Sb) is stronger than that of Te(Ⅱ)-Bi(Sb).The interaction between Te(Ⅰ) and Te(Ⅰ) in different layers is the weakest and the interaction should be Van Der Waals power.The charge of Sb is lower than that of Bi,and the ionic bond of Te-Sb is weaker than that of Te-Bi.The covalent bond of Te-Sb is also weaker than that of Te-Bi.Therefore,the thermoelectric property may be improved by adjusting the electrical conductivity and thermal conductivity through changing the composition in the compounds of Bi-Sb-Te. The calculated results are consistent with the experiments.

  2. Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

    2003-01-01

    We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

  3. In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

    International Nuclear Information System (INIS)

    Semenov, A. N.; Lyublinskaya, O. G.; Solov’ev, V. A.; Mel’tser, B. Ya.; Ivanov, S. V.

    2008-01-01

    Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined.

  4. Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

    International Nuclear Information System (INIS)

    Murape, D.M.; Eassa, N.; Nyamhere, C.; Neethling, J.H.; Betz, R.; Coetsee, E.; Swart, H.C.; Botha, J.R.; Venter, A.

    2012-01-01

    Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH 4 ) 2 S/(NH 4 ) 2 SO 4 ) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (φ b ) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at −0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb–O, present on the as-received material is effectively removed on treating with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ]+S) and (NH 4 ) 2 S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.

  5. Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

    Science.gov (United States)

    Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

    2018-05-01

    In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

  6. Phase equilibria melt-solid in the systems Pb-InSb-CaSb and Pb-InCs-GaAs

    International Nuclear Information System (INIS)

    Grebenyuk, A.M.; Charykov, N.A.; Puchkov, L.V.

    1992-01-01

    Results of experimental investigation and thermodynamic calculation of fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs thernary systems, which haven't been investigated earlier, are presented. Fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs systems contain two crystallization fields: solid solutions of In x Ga 1-x Sb and Pb, In x Ga 1-x As and Pb. The latter fields are retained against Pb figurative point and conform to 582 K < T < 593 K crystallization temperatures

  7. Formation Mechanism of Self Assembled Horizontal ErSb Nanowires Embedded in a GaSb(001) Matrix

    Science.gov (United States)

    Wilson, Nathaniel; Kraemer, Stephan; PalmstrøM, Chris

    The ErxGa1-xSb exhibits a variety of self-assembling nanostructures. In order to harness these nanostructures for use in devices and other material systems it is important to understand their formation. We have characterized the growth mechanism of self-assembled horizontal ErSb nanowires in a GaSb(001) matrix through the use of in-situ Scanning Tunneling Microscopy (STM) as well as ex-situ Transmission Electron Microscopy (TEM). We observe large GaSb macrosteps on the growth surface of Er.3Ga.7Sb samples. The areas near the ledge and base of the macrosteps show significant differences in size and distribution of ErSb nanowires. Results suggest that the formation of macrosteps drives the transition from vertical to horizontal nanowires in the ErxGa1-xSb system. We also observe a low temperature growth mode, which results in horizontal nanowire formation under a wide range of flux conditions. This new growth mode does not exhibit the embedded growth observed in the formation of nanowires at higher temperatures and may allow for horizontal nanowire formation without the presence of macrosteps, as well as the formation of smaller nanoparticles which may be useful for achieving smaller nanoparticle dimensions and electron confinement effects. This work was supported by NSF-DMR under 1507875.

  8. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  9. Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

    International Nuclear Information System (INIS)

    Ahmed, Aziz; Han, Seungwoo

    2017-01-01

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

  10. Sb interactions with TaC precipitates and Cu in ion-implanted α-Fe

    International Nuclear Information System (INIS)

    Follstaedt, D.M.; Myers, S.M.

    1980-01-01

    The interactions of Sb with the other species implanted into Fe to form Fe-Ta-C-Sb and Fe-Cu-Sb alloys have been examined with transmission electron microscopy and Rutherford backscattering following annealing at 873 0 K. Trapping of Sb at TaC precipitates is observed in the former alloy just as was previously observed in Fe-Ti-C-Sb. In Fe-Cu-Sb, Sb interactions are governed by the atomic ratio of Sb to Cu. For ratios between 0.2 to 0.4, the compound β-Cu 3 Sb was observed to form. For Sb to Cu ratios approx.< 0.1, fcc Cu precipitates were observed. In addition to the expected Sb dissolution in Cu, Sb trapping by Cu precipitates is also observed. The binding enthalpy of Sb at both TaC and Cu precipitates with respect to a solution site in the bcc Fe is the same as observed for TiC, approx. 0.4 eV. The constancy of the binding enthalpy at such chemically dissimilar precipitates supports the hypothesis that the trapping is due to the structural discontinuity of the precipitate-host interface. The observed Sb trapping at precipitates is of potential significance for the control of temper embrittlement in bcc steels

  11. Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

    International Nuclear Information System (INIS)

    Liu, Ruiping; Liu, Feng; Hu, Chengzhi; He, Zan; Liu, Huijuan; Qu, Jiuhui

    2015-01-01

    Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca"2"+ and Mn"2"+. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q_m_a_x_,_S_b_(_V_)) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd"2"+ exhibited a more significant positive effect than both calcium ion (Ca"2"+) and manganese ion (Mn"2"+). Cd"2"+ showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca"2"+ and Mn"2"+. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH_i) range from 2 to 9, and Q_S_b_(_V_) decreases whereas Q_C_d_(_I_I_) increases with elevated pH_i. Their combined values, as expressed by Q_S_b_(_V_)_+_C_d_(_I_I_), amount to about 2 mmol/g and vary slightly in the pH_i range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

  12. Nanocrystalline GaSbO{sub 4} with high surface area prepared via a facile hydrothermal method and its photocatalytic activity study

    Energy Technology Data Exchange (ETDEWEB)

    Fu Yanghe; Xue Hun; Qin Meng; Liu Ping; Fu Xianzhi [Research Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis - State Key Laboratory Breeding Base, Fuzhou University, Fuzhou 350002 (China); Li Zhaohui, E-mail: zhaohuili1969@yahoo.com [Research Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis - State Key Laboratory Breeding Base, Fuzhou University, Fuzhou 350002 (China)

    2012-05-05

    Graphical abstract: Nanocrystalline GaSbO{sub 4} prepared via a facile hydrothermal method possesses large specific surface area and exhibits photocatalytic activity for the degradations of salicylic acid and acetone. Highlights: Black-Right-Pointing-Pointer Facile hydrothermal method to nanocrystalline GaSbO{sub 4} with large surface area. Black-Right-Pointing-Pointer GaSbO{sub 4} shows photocatalytic activity for the degradations of salicylic acid and acetone. Black-Right-Pointing-Pointer The photocatalytic mechanism of GaSbO{sub 4} was proposed based on the ESR result. - Abstract: Nanocrystalline GaSbO{sub 4} with small particle size and large BET specific area was successfully prepared via a facile hydrothermal method from Sb{sub 2}O{sub 5}. The influence of the reaction pH on the formation of the final product was investigated. The obtained sample was characterized by X-ray diffraction (XRD), N{sub 2}-sorption BET surface area, UV-vis diffuse reflectance spectroscopy (DRS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM). The photocatalytic activity for the degradations of salicylic acid and acetone over nanocrystalline GaSbO{sub 4} under UV irradiations was for the first time revealed. Based on the electron spin resonance (ESR) result, the reactive species involved in the photocatalytic reaction over nanocrytalline GaSbO{sub 4} are determined to be HO{center_dot} and O{sub 2}{sup -}{center_dot}. The photocatalytic mechanism of GaSbO{sub 4} was proposed.

  13. Residual carrier density in GaSb grown on Si substrates

    International Nuclear Information System (INIS)

    Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

    2006-01-01

    The relationships between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates were investigated. Dislocation density was evaluated by cross-sectional transmission electron microscopy (TEM). The TEM images indicated that the dislocation density after a 5-μm-thick GaSb film was grown was below 1 x 10 8 /cm 2 although the density near the interface between the Si substrate and the GaSb film was about 3 x 10 9 /cm 2 . Forming a dislocation loop by growing a thick GaSb layer may decrease the dislocation density. The density and mobility of the residual carrier were investigated by Hall measurement using the van der Pauw method. The residual carriers in GaSb grown on Si substrates were holes, and their densities decreased significantly from 4.2 x 10 18 to 1.4 x 10 17 /cm 3 as GaSb thickness was increased from 500 to 5500 nm

  14. Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

    International Nuclear Information System (INIS)

    Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G.

    2013-01-01

    Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

  15. Theoretical study of defects Cu{sub 3}SbSe{sub 4}: Search for optimum dopants for enhancing thermoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Do, Dat T., E-mail: dodat@msu.edu; Mahanti, S.D., E-mail: mahanti@pa.msu.edu

    2015-03-15

    Highlights: • We present the first systematic study of defects in Cu{sub 3}SbSe{sub 4}. • Possible n-type and p-type dopants are suggested for Cu and Sb site. • Transition-metal substitutions on Sb potentially improve thermoelectric properties. • Transition-metal substitutions on Se strongly distort local crystal geometry. • p-type behavior of as synthesized Cu{sub 3}SbSe{sub 4} is most likely due to Cu. - Abstract: Cu{sub 3}SbSe{sub 4} is a promising thermoelectric material due to high thermopower (>400μV/K) at 300 K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of band gap formation is quite subtle due to the importance of active lone pair (5s{sup 2}) of Sb and the non-local exchange interaction between these and Se 5p electrons. Since for any application of semiconductors understanding the properties of defects is essential, we discuss the results of a systematic study of several point defects in Cu{sub 3}SbSe{sub 4} including vacancies and substitutions for each of the components. First principles calculations using density functional theory show that among variety of possible dopants, p-type doping can be done by substituting Sb with group IV elements including Sn, Ge, Pb and Ti and n-type doping can be done by replacing Cu by Mg, Zn. Doping at the Se site appears to be rather difficult. Electronic structure calculations also suggest that the p-type behavior seen in nominally pure Cu{sub 3}SbSe{sub 4} is most likely due to Cu vacancy rather than Se vacancy.

  16. Polaronic transport and thermoelectricity in Fe1 -xCoxSb2S4 (x =0 , 0.1, and 0.2)

    Science.gov (United States)

    Liu, Yu; Kang, Chang-Jong; Stavitski, Eli; Du, Qianheng; Attenkofer, Klaus; Kotliar, G.; Petrovic, C.

    2018-04-01

    We report a study of Co-doped berthierite Fe1 -xCoxSb2S4 (x =0 , 0.1, and 0.2). The alloy series of Fe1 -xCoxSb2S4 crystallize in an orthorhombic structure with the Pnma space group, similar to FeSb2, and show semiconducting behavior. The large discrepancy between activation energy for conductivity, Eρ (146 ˜270 meV ), and thermopower, ES (47 ˜108 meV ), indicates the polaronic transport mechanism. Bulk magnetization and heat-capacity measurements of pure FeSb2S4 (x =0 ) exhibit a broad antiferromagnetic transition (TN=46 K ) followed by an additional weak transition (T*=50 K ). Transition temperatures (TN and T*) slightly decrease with increasing Co content x . This is also reflected in the thermal conductivity measurement, indicating strong spin-lattice coupling. Fe1 -xCoxSb2S4 shows relatively high value of thermopower (up to ˜624 μ V K-1 at 300 K) and thermal conductivity much lower when compared to FeSb2, a feature desired for potential applications based on FeSb2 materials.

  17. Synthesis and crystal structure of Cd2SbBr2

    International Nuclear Information System (INIS)

    Reshetova, L.N.; Shevel'kov, A.V.; Popovkin, B.A.

    1999-01-01

    A new cadmium antimonidobromide, i.e. Cd 2 SbBr 2 , has been synthesized by the standard ampoule method. The compound is crystallized in monoclinic system of sp. gr. P2 1 :a=8.244 (1), b=9.920(1), c=8.492(1) A, Β=116.80(1) deg. Binuclear anions of Sb 2 4- (Sb-Sb 2.78 A), octahedrically surrounded by six cadmium atoms, are a basic specific feature of the structure. Octahedrons of Sb 2 Cd 6 , by collectivizing the equatorial vertices. form layers, the alternation mode of which is similar to the one described for cadmium and mercury arsenidochlorides

  18. (In)GaSb/AlGaSb quantum wells grown on Si substrates

    International Nuclear Information System (INIS)

    Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

    2007-01-01

    We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

  19. Experimental determination of the energy levels of the antimony atom (Sb II), ions of the antimony (Sb II, Sb III), mercury (Hg IV) and cesium (Cs X)

    International Nuclear Information System (INIS)

    Arcimowicz, B.

    1993-01-01

    The thesis concerns establishing the energy scheme of the electronic levels, obtained from the analysis of the investigated spectra of antimony atom and ions (Sb I, Sb II, Sb III) and higher ionized mercury (Hg IV) and cesium (Cs X) atoms. The experimental studies were performed with optical spectroscopy methods. The spectra of the elements under study obtained in the spectral range from visible (680 nm) to vacuum UV (40 nm) were analysed. The classification and spectroscopic designation of the experimentally established 169 energy levels were obtained on the basis of the performed calculations and the fine structure analysis. The following configurations were considered: 5s 2 5p 2 ns, 5s 2 5p 2 n'd, 5s5p 4 of the antimony atom, 5s 2 5pns, 5s 2 5pn'd, 5s5p 3 of the ion Sb II, 5s 2 ns, 5s 2 n'd, 5s5p 2 of the on Sb III, 5d 8 6p of the ion Hg IV 4d 9 5s and 4d 9 5p Cs X. A reclassification was performed and some changes were introduced to the existing energy level scheme of the antimony atom, with the use of the information obtained from the absorption spectrum taken in the VUV region by the ''flash pyrolysis'' technique. The measurements of the hyperfine splittings in 19 spectral lines belonging to the antimony atom and ions additionally confirmed the assumed classification of the levels involved in these lines. The energy level scheme, obtained for Sb III, was compared to the other ones in the isoelectronic sequence starting with In I. On the basis of the analysis of the Hg IV spectrum it was proved that ground configuration of the three times ionized mercury atom is 5d 9 not 5d 8 6s as assumed until now. The fine structure, established from the analysis of the spectra of the elements under study was examined in multiconfiguration approximation. As a result of the performed calculations the fine structure parameters and wavefunctions were determined for the levels whose energy values were experimentally established in the thesis. (author). 140 refs, 22 figs, 17

  20. Enhanced thermoelectric performance with participation of F-electrons in β-Zn4Sb3

    International Nuclear Information System (INIS)

    Liu, Mian; Qin, Xiaoying; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

    2014-01-01

    Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn 4 Sb 3 . • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn 4 Sb 3 . -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn 4 Sb 3 were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn 4 Sb 3 at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale

  1. Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

    2017-06-30

    Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

  2. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  3. Improved GaSb surfaces using a (NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}S0{sub 4} solution

    Energy Technology Data Exchange (ETDEWEB)

    Murape, D.M., E-mail: Davison.Murape@live.nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Eassa, N.; Nyamhere, C.; Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}SO{sub 4}) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height ({phi}{sub b}) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at -0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb-O, present on the as-received material is effectively removed on treating with ([(NH{sub 4}){sub 2}S/(NH{sub 4}){sub 2}SO{sub 4}]+S) and (NH{sub 4}){sub 2}S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is {<=}8.5 nm.

  4. The characterization of Co xZn7-xSb2O12 spinel obtained by the pechini method

    Directory of Open Access Journals (Sweden)

    Deiby Santos Gouveia

    2005-06-01

    Full Text Available Oxides with spinel structures have been studied for many decades as they have been used in a variety of applications like pigments and refractories. They have also been used as a model structure to evaluate the relative stability of ions in octahedral and tetrahedral sites. Zinc- antimony spinels (Zn7Sb2O12 were synthesized by the Pechini method and the cation Zn2+ was substituted by Co2+, taking into consideration the stoichiometry of Co xZn7-xSb2O12 (x = 0 - 7. Characterization of the thermal properties of pyrolyzed powders was carried out with a TG/DTA analyzer, and mass losses were determined as a function of the cobalt content in the resin. The powders were calcined at temperatures in the range 600 to 1000 °C and characterized by XRD, BET and IR spectroscopy. Maximum cristalinity was obtained in powders calcined at 1000 °C. Materials with x = 5 - 7 revealed the presence of a secondary phase (Co, ZnSb2O6. Infrared analysis facilitated in the determination of the possible sites of Zn2+, Co2+ and Sb2+ ions in the lattice.

  5. Very smooth FeSb.sub.2./sub.Te and Ce.sub.0.1./sub.Fe.sub.0.7./sub.Co.sub.3.3./sub.Sb.sub.12./sub. layers prepared by modified PLD

    Czech Academy of Sciences Publication Activity Database

    Remsa, Jan; Jelínek, Miroslav; Kocourek, Tomáš; Zeipl, Radek; Navrátil, Jiří

    2016-01-01

    Roč. 45, č. 3 (2016), s. 1921-1926 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : PLD * RTA * thermoelectric layer * Harman * FeSb 2 Te * Ce 0.1 Fe 0.7 Co 3.3 Sb 12 Subject RIV: BM - Solid Matter Physics ; Magnetism; CD - Macromolecular Chemistry (UMCH-V) Impact factor: 1.579, year: 2016

  6. Optimization of growth parameters for MOVPE-grown GaSb and Ga{sub 1-x}In{sub x}Sb

    Energy Technology Data Exchange (ETDEWEB)

    Miya, S.S.; Wagener, V. [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa); Botha, J.R., E-mail: reinhardt.botha@nmmu.ac.za [Department of Physics, Private Bag X 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6001 (South Africa)

    2012-05-15

    The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 Degree-Sign C at atmospheric pressure. Trimethylindium was added in the case of Ga{sub 1-x}In{sub x}Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga{sub 1-x}In{sub x}Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga{sub 1-x}In{sub x}Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

  7. Reduction in thermal conductivity of BiSbTe lump

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

    2017-03-15

    In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

  8. Atomic structure determination of InSb(100)c(4x4) and c(8x2)phases by X-ray photoelectron diffraction

    International Nuclear Information System (INIS)

    Carvalho, V.E. de; Soares, E.A.; Magalhaes, M.R.P.; Paniago, R.; Siervo, A. de; Landers, R.

    2004-01-01

    Full text: The (100) surfaces of III-V compound semiconductors exhibit a variety of surface reconstructions that have attracted a lot of attention because of their importance in both homo epitaxial and heteroepitaxial growth. In the special case of the narrow bandgap InSb compound semiconductor its potential application in high-speed electronic and optoelectronic devices has encourage many studies of its (100) surface atomic structure. Among the reconstructions presented by the InSb(100) surface two of them have received more attention, that is, the observed well-ordered In-rich c(8x2) and Sb terminated c(4x4) surfaces. The c(8x2) structure can be obtained by exposing the surface to low energy ion bombardment and annealing, whereas the c(4x4) structure involves the chemisorption of Sb onto an already Sb-terminated surface. These two structures have been studied mainly by scanning tunneling microscopy (STM) and surface X-ray diffraction (SXRD) techniques and all the proposed models are based on the occurrence of group III (and/or V) blocks of dimmers occupying sites on the top or at subsurface layer. However, there are still difficulties in determining either the exact number of atoms in each dimmer or the number of dimmers in each block. With the goal of getting a better structure determination of the InSb(100) surface phases a photoelectron diffraction experiment (XPD) was carried out at LNLS where synchrotron and Al-K α radiations have been used. In the present work, the experimental and preliminary results of structure determination for both In Sn(100)c(8x2) and InSb(100)c(4x4) phases will be presented and discussed. (author)

  9. Optical and structural characterization of GaSb and Te-doped GaSb single crystals

    International Nuclear Information System (INIS)

    Tirado-Mejia, L.; Villada, J.A.; Rios, M. de los; Penafiel, J.A.; Fonthal, G.; Espinosa-Arbelaez, D.G.; Ariza-Calderon, H.; Rodriguez-Garcia, M.E.

    2008-01-01

    Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality

  10. Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

    International Nuclear Information System (INIS)

    Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

    2012-01-01

    To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

  11. CRYSTAL-QUASICHEMICAL ANALYSIS OF DEFECT SUBSYSTEM OF DOPED PbTe: Sb CRYSTALS AND Pb-Sb-Te SOLID SOLUTIONS

    Directory of Open Access Journals (Sweden)

    D.M. Freik

    2014-05-01

    Full Text Available Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb2Те3: replacement of antimony ions lead sites  with the formation of cation vacancies  (I or neutral interstitial tellurium atoms  (II were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb2Те3 solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.

  12. Characterization and complete genome sequence of a novel N4-like bacteriophage, pSb-1 infecting Shigella boydii.

    Science.gov (United States)

    Jun, Jin Woo; Yun, Sae Kil; Kim, Hyoun Joong; Chai, Ji Young; Park, Se Chang

    2014-10-01

    Shigellosis is one of major foodborne pathogens in both developed and developing countries. Although antibiotic therapy is considered an effective treatment for shigellosis, the imprudent use of antibiotics has led to the increase of multiple-antibiotic-resistant Shigella species globally. In this study, we isolated a virulent Podoviridae bacteriophage (phage), pSb-1, that infects Shigella boydii. One-step growth analysis revealed that this phage has a short latent period (15 min) and a large burst size (152.63 PFU/cell), indicating that pSb-1 has good host infectivity and effective lytic activity. The double-stranded DNA genome of pSb-1 is composed of 71,629 bp with a G + C content of 42.74%. The genome encodes 103 putative ORFs, 9 putative promoters, 21 transcriptional terminators, and one tRNA region. Genome sequence analysis of pSb-1 and comparative analysis with the homologous phage EC1-UPM, N4-like phage revealed that there is a high degree of similarity (94%, nucleotide sequence identity) between pSb-1 and EC1-UPM in 73 of the 103 ORFs of pSb-1. The results of this investigation indicate that pSb-1 is a novel virulent N4-like phage infecting S. boydii and that this phage might have potential uses against shigellosis. Copyright © 2014 Institut Pasteur. Published by Elsevier Masson SAS. All rights reserved.

  13. Formation of high-conductivity regions in SnO2-AOx (A - Ti4+, Zr4+, Sb3+, Sb5+) films exposed to ultraviolet radiation of H2

    International Nuclear Information System (INIS)

    Postovalova, G.G.; Roginskaya, Yu.E.; Zav'yalov, S.A.; Galyamov, B.Sh.; Klimasenko, N.L.

    2000-01-01

    Composition, structure and electron properties of SnO 2 films doped by Ti, Zr and Sb oxides were studied. The doped SnO 2 films were determined to contain nano-regions of SnO 2 base crystalline solid solutions and amorphous SnO 2 containing Sn 2+ or Sb 3+ ions and residing at the surface of crystallites or between them. These composition and structure peculiarities affect essentially both electron structure and electrical properties of films. Localized 5s-states of the conductivity range diffused boundary of amorphous SnO 2 partially filled with 5s-electrons of Sn 2+ or Sb 3+ ions serving as traps capture free electrons in the crystalline ranges and motivate high resistance of films [ru

  14. AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-10-01

    Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

  15. Thermodynamic stability studies of Ce-Sb compounds with Fe

    Science.gov (United States)

    Xie, Yi; Zhang, Jinsuo; Benson, Michael T.; Mariani, Robert D.

    2018-02-01

    Lanthanide fission products can migrate to the fuel periphery and react with cladding, causing fuel-cladding chemical interaction (FCCI). Adding a fuel additive dopant, such as Sb, can bind lanthanide, such as Ce, into metallic compounds and thus prevent migration. The present study focuses on the thermodynamic stability of Ce-Sb compounds when in contact with the major cladding constituent Fe by conducting diffusion couple tests. Ce-Sb compounds have shown high thermodynamic stability as they did not react with Fe. When Fe-Sb compounds contacted with Ce, Sb was separated out of Fe-Sb compounds and formed the more stable Ce-Sb compounds.

  16. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

    Science.gov (United States)

    Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

    2018-04-01

    The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

  17. Structural, electric and kinetic parameters of ternary alloys of GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, E. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico)]. E-mail: m6007@ciateq.net.mx; Prokhorov, E.F. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico); Gonzalez-Hernandez, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico); Mendoza-Galvan, A. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Ap. Postal 13, Juriquilla, Queretaro, C. P. 76230, (Mexico)

    2005-01-03

    Thin amorphous films of GeSbTe have been widely employed in the technology used for phase change optical memory or compact disks. In this article, we report on measurements of resistance, transmittance, and X-ray diffraction in thin films with stoichiometric compositions of Ge{sub 1}Sb{sub 4}Te{sub 7}, Ge{sub 1}Sb{sub 2}Te{sub 4}, Ge{sub 2}Sb{sub 2}Te{sub 5}, and Ge{sub 4}Sb{sub 1}Te{sub 5.} The resistivity, lattice constant, and the temperature at which transformation from the amorphous phase to the cubic crystalline structure occurs were calculated for each stoichiometric composition, and the energy activation was determined, applying Kissinger's model. It was found that the Ge{sub 4}Sb{sub 1}Te{sub 5} composition has the highest crystallization temperature (425 K), the highest resistivity (0.178 {omega} cm), the greatest E{sub a} (3.09 eV), and the lowest lattice constant (a=5.975 A) in the cubic phase at 170 deg C.

  18. Ab Initio Molecular Dynamics Studies of Pb m Sb n ( m + n ≤ 9) Alloy Clusters

    Science.gov (United States)

    Song, Bingyi; Xu, Baoqiang; Yang, Bin; Jiang, Wenlong; Chen, Xiumin; Xu, Na; Liu, Dachun; Dai, Yongnian

    2017-10-01

    Structure, stability, and dynamics of Pb m Sb n ( m + n ≤ 9) clusters were investigated using ab initio molecular dynamics. Size dependence of binding energies, the second-order energy difference of clusters, dissociation energy, HOMO-LUMO gaps, Mayer bond order, and the diffusion coefficient of Pb m Sb n clusters were discussed. Results suggest that Pb3Sb2, Pb4Sb2, and Pb5Sb4 ( n = 2 or 4) clusters have higher stability than other clusters, which is consistent with previous findings. In case of Pb-Sb alloy, the dynamics results show that Pb4Sb2 (Pb-22.71 wt pct Sb) can exist in gas phase at 1073 K (800 °C), which reasonably explains the azeotropic phenomenon, and the calculated values are in agreement with the experimental results (Pb-22 wt pct Sb).

  19. Variation of the refractive index for the active layer of the double heterostructure GaAlAsSb/GaInAsSb/GaAlAsSb in injected mode

    International Nuclear Information System (INIS)

    Mohou, M.A.

    1995-01-01

    This work reports on the influence of the injected current on the refractive index in the active layer of GaInAsSb/GaAlAsSb laser diodes. These diodes present at threshold a full beam width at half power θ perpendicular of about 52 deg. C. The fluctuation of the refractive index caused by the injection of free carriers was studied on the basis of the evolution of θ perpendicular as a function of the injected current. It was shown that the inversion of the population which follows the rising of the gain, causes a slight decrease of the refractive index. 12 refs, 5 figs

  20. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

    Science.gov (United States)

    Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

    2016-02-10

    Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

  1. Structural study of pyrones by NMR

    International Nuclear Information System (INIS)

    Mandarino, D.G.

    1985-01-01

    Extracts of two species of Aniba, designed Aniba-SA (light petroleum extract) and Aniba-SB (benzene extract), afforded by chromatographic fraccionation some compounds. The isolated compounds were identified using spectrometric data and C 13 -NMR coupled and decompled spectra of pyrones were registered. Measurement of the heteronuclear residual coupling by irradiation proton frequency off-resonance was used for distinguish C-5, C-7 and C-8 carbons of the pyrones SB-1, SB-3, SB-4 and SB-5. (M.J.C.) [pt

  2. Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.; Semenikhin, P.V.; Kalinina, K.V.; Parfeniev, R.V.; Berezovets, V.A.; Safonchik, M.O.; Hospodková, Alice; Pangrác, Jiří; Zíková, Markéta; Hulicius, Eduard

    2016-01-01

    Roč. 10, č. 4 (2016), 1-8, č. článku 046013. ISSN 1934-2608 R&D Projects: GA ČR GA13-15286S; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : Shubnikov-de Haas oscillations * microwave absorption * electron-paramagnetic resonance * composite quantum wells * InAs/GaSb/AlSb * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.325, year: 2016

  3. Stabilization of high-temperature antimony oxide with molybdenum incorporation. Structure of Mo-doped Sb2O4 by powder neutron diffraction and extended X-ray absorption fine structure spectroscopy

    International Nuclear Information System (INIS)

    Teller, R.G.; Antonio, M.R.; Brazdil, J.F.; Mehicic, M.; Grasselli, R.K.

    1985-01-01

    It has been discovered that the presence of MoO 3 lowers the α-β transition in Sb 2 O 4 from 935 to 850 0 C with concurrent dissolution of Mo in the high-temperature (β) form. The structure of Mo-doped β-Sb 2 O 4 has been investigated by powder neutron diffraction, extended X-ray absorption fine structure (EXAFS) and Raman spectroscopies, and scanning-electron microscopy (SEM). Cell parameters: a = 12.0571 (12) A, b = 4.8335 (1) A, c = 5.3838 (6) A, β = 105.579 (5) 0 , monoclinic, space group C2/c, Z = 4. Combining the results of these techniques leads to the hypothesis that Mo is located interstitially within channels of electron density in the Sb 2 O 4 structure with concurrent vacancy of two Sb/sup III/ atoms. There is no apparent oxygen deficiency in the resulting structure. 25 references, 6 figures, 3 tables

  4. Building Planner Commitment : Are California's SB 375 and Oregon's SB 1059 Models for Climate-Change Mitigation?

    Science.gov (United States)

    2017-11-01

    California's Sustainable Communities and Climate Protection Act (SB 375) and the Oregon Sustainable Transportation Initiative (SB 1059) have made them the first states in the nation to try and reduce greenhouse gas (GHG) emissions using the transport...

  5. KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

    KAUST Repository

    Ahmed, Ejaz

    2015-01-01

    The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

  6. SB265610 is an allosteric, inverse agonist at the human CXCR2 receptor

    Science.gov (United States)

    Bradley, ME; Bond, ME; Manini, J; Brown, Z; Charlton, SJ

    2009-01-01

    Background and purpose: In several previous studies, the C-X-C chemokine receptor (CXCR)2 antagonist 1-(2-bromo-phenyl)-3-(7-cyano-3H-benzotriazol-4-yl)-urea (SB265610) has been described as binding competitively with the endogenous agonist. This is in contrast to many other chemokine receptor antagonists, where the mechanism of antagonism has been described as allosteric. Experimental approach: To determine whether it displays a unique mechanism among the chemokine receptor antagonists, the mode of action of SB265610 was investigated at the CXCR2 receptor using radioligand and [35S]-GTPγS binding approaches in addition to chemotaxis of human neutrophils. Key results: In equilibrium saturation binding studies, SB265610 depressed the maximal binding of [125I]-interleukin-8 ([125I]-IL-8) without affecting the Kd. In contrast, IL-8 was unable to prevent binding of [3H]-SB265610. Kinetic binding experiments demonstrated that this was not an artefact of irreversible or slowly reversible binding. In functional experiments, SB265610 caused a rightward shift of the concentration-response curves to IL-8 and growth-related oncogene α, but also a reduction in maximal response elicited by each agonist. Fitting these data to an operational allosteric ternary complex model suggested that, once bound, SB265610 completely blocks receptor activation. SB265610 also inhibited basal [35S]-GTPγS binding in this preparation. Conclusions and implications: Taken together, these data suggest that SB265610 behaves as an allosteric inverse agonist at the CXCR2 receptor, binding at a region distinct from the agonist binding site to prevent receptor activation, possibly by interfering with G protein coupling. PMID:19422399

  7. Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites InxCo4Sb12

    International Nuclear Information System (INIS)

    Leszczynski, J; Da Ros, V; Lenoir, B; Dauscher, A; Candolfi, C; Masschelein, P; Hejtmanek, J; Kutorasinski, K; Tobola, J; Smith, R I; Stiewe, C; Müller, E

    2013-01-01

    The thermoelectric and thermodynamic properties of polycrystalline In x Co 4 Sb 12 (0.0 ⩽ x ⩽ 0.26) skutterudites were investigated and analysed between 2 and 800 K by means of electrical resistivity, thermopower, thermal conductivity and specific heat measurements. Hall effect, sound velocity and thermal expansion measurements were also made in order to gain insights into the transport and elastic properties of these compounds. The impact of the In filling on the crystal structure as well as the thermal dynamics of the In atoms were tracked down to 4 K using powder neutron diffraction experiments. Analyses of the transport data were compared with the evolution of the electronic band structure with x determined theoretically within the Korringa–Kohn–Rostoker method with the coherent potential approximation. These calculations indicate that In gives rise to a remarkably large p-like density of states located at the conduction band edge. The electrical properties show typical trends of heavily doped semiconductors regardless of the In content. The thermal transport in CoSb 3 is strongly influenced by the presence of In in the voids of the crystal structure resulting in a drop in the lattice thermal conductivity values in the whole temperature range. The low value of the Grüneisen parameter suggests that this decrease mainly originates from enhanced mass-fluctuations and point-defect scattering mechanisms. The highest thermoelectric figure of merit ZT ∼ 1.0 at 750 K was achieved at the maximum In filling fraction, i.e. for x = 0.26. (paper)

  8. Thermoelectric properties of high pressure synthesized lithium and calcium double-filled CoSb3

    Directory of Open Access Journals (Sweden)

    Xiaohui Li

    2017-01-01

    Full Text Available Lithium and calcium are inefficient filling elements of CoSb3 at ambient pressure, but show nice filling behavior under high pressure. In this work, we synthesized Li/Ca double-filled CoSb3 with high pressure synthesis method. The products show the skutterudite structure of Im3¯ symmetry. Thermoelectric properties were effectively enhanced through Li and Ca co-filling. For the optimal Li0.08Ca0.18Co4Sb12 sample, the power factor maintains a relatively high value over the whole measurement temperature range and peaks at 4700μWm−1K−2, meanwhile the lattice thermal conductivity is greatly suppressed, leading to a maximal ZT of 1.18 at 700 K. Current work demonstrates high pressure synthesis as an effective method to produce multiple elemental filled CoSb3 skutterudites.

  9. First-principles study lone-pair effects of Sb (III)-S chromophore influence on SHG response in quaternary potassium containing silver antimony sulfides

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Junben [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China); School of Physics Science and Technology, Xinjiang University, Urumqi 830046 (China); Su, Xin; Hou, Dianwei; Lei, Binghua [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yang, Zhihua, E-mail: zhyang@ms.xjb.ac.cn [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China); Pan, Shilie, E-mail: slpan@ms.xjb.ac.cn [Key Laboratory of Functional Materials and Devices for Special Environments of CAS,, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011 (China)

    2017-05-15

    First-principles studies of the geometric structures, electronic structures and optical properties of non-centrosymmetrical (NCS) KAg{sub 2}SbS{sub 4}, K{sub 2}AgSbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} and centrosymmetrical (CS) KAg{sub 2}SbS{sub 3} and K{sub 3}Ag{sub 9}Sb{sub 4}S{sub 12} have been performed by means of density functional theory. It is indicated that although they have similarity in their anionic groups and, the electronic structures, prominent features of the optical anisotropy or second-order nonlinear optical (NLO) susceptibilities are apparently different. The calculated birefringences are 0.0537, 0.0343, 0.1324, 0.2217 and 0.0604 which are attributed to the different anionic groups [SbS{sub 3}] and triangles [AgS{sub 3}]. Also, the calculated NLO responses are about 0.5×, 1.0× and 2.0× times than that commercial AgGaS{sub 2} (AGS, d{sub 36}=11 pm/V) for K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}, respectively. In comparison with the absolute magnitude of second harmonic generation (SHG) coefficients, the order K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}>KAg{sub 2}SbS{sub 4}>K{sub 2}AgSbS{sub 4} is clearly established in the SHG response. Further analysis based on the real-space atom-cutting method reveals that the main sources of the SHG properties of these compounds are from the Sb-S group, especially K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is mainly attributed to the lone pair stereochemical activity of Sb (III)-S group. - Graphical abstract: Compounds K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} exhibit second-order NLO response: 15×, 30× and 62× times than that KDP (KH{sub 2}PO{sub 4}, d{sub 36}=0.39 pm/V), respectively. First-principles methods reveal that the large SHG response of K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is dominated by the Sb-S chromophore with lone pairs.

  10. Ordered perovskites with cationic vacancies. 7. Structural investigations on Ba/sub 2/Zrsub(3/4)vacantsub(1/4)SbO/sub 6/

    Energy Technology Data Exchange (ETDEWEB)

    Treiber, U; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

    1980-11-01

    The ochre coloured Ba/sub 2/Zrsub(3/4)vacantsub(1/4)SbO/sub 6/ belongs to the group of oxygen perovskites with an ordered distribution of the vacancies. It crystallizes tetragonal (a = 11.68/sub 5/ A; c = 16.60/sub 6/ A) with 16 formula units in the cell: Ba/sub 32/Zr/sub 12/vacant/sub 4/Sb/sub 16/O/sub 96/. For the space group P 4/mmm intensity calculations on powder data gave a refined, intensity related R' value of 4.8%. In the structure the Zr and Ba atoms are ordered (1:1 order); the four cationic vacancies are located in a face centered arrangement in the zirconium sublattice. The Ba atoms are displaced by approximately 0.20 A in direction of the neighbouring vacancy, while the other cations maintain their ideal positions.

  11. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

    2017-03-31

    Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb

  12. The single crystal structure determination of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr)

    Energy Technology Data Exchange (ETDEWEB)

    Benavides, Katherine A.; McCandless, Gregory T.; Chan, Julia Y. [Texas Univ., Dallas, Richardson, TX (United States). Dept. of Chemistry and Biochemistry

    2017-09-01

    Single crystals of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr) have been successfully grown and the compounds adopt the orthorhombic Ln{sub 6}MnSb{sub 15} structure type (space group Immm), with a∝4.3 Aa, b∝15 Aa, and c∝19 Aa. This structure is comprised of antimony nets and antimony ribbons which exhibit positional disorder at connecting points between antimony substructures, in addition to two partially occupied transition metal sites. The unit cell volumes of the La analogs displayed a systematic decrease upon Zn substitution. However, for the Ce{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} and Pr{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), the volumes deviate from linearity as observed in the parent compounds.

  13. High temperature thermoelectric properties of p-type skutterudites BaxYbyCo4-zFezSb12

    KAUST Repository

    Dong, Y.

    2012-01-01

    Several polycrystalline p-type skutterudites with compositions Ba xYb yCo 4-zFe zSb 12, with varying filler concentrations x and y, and z = 1 to 2, were synthesized by reacting the constituents and subsequent solid state annealing, followed by densification by hot-pressing. Their thermoelectric properties were evaluated from 300 to 820 K. The Yb filling fraction increased with Fe content while the amount of Fe substitution had little influence on the Ba filling fraction. High purity specimens were obtained when the Fe content was low. Bipolar conduction contributed to the thermal conductivity at elevated temperatures. A maximum ZT value of 0.7 was obtained at 750 K for the specimen with the highest Fe content and filling fraction. The potential for thermoelectric applications is also discussed. © 2012 American Institute of Physics.

  14. Ternary CaCu4P2-type pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb)

    International Nuclear Information System (INIS)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-01-01

    Four ternary pnictides AAg 4 Pn 2 (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 °C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg 4 Pn 2 adopt the trigonal CaCu 4 P 2 -type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) Å, c=24.041(3) Å for SrAg 4 As 2 ; a=4.5352(2) Å, c=23.7221(11) Å for EuAg 4 As 2 ; a=4.7404(4) Å, c=25.029(2) Å for SrAg 4 Sb 2 ; a=4.7239(3) Å, c=24.689(2) Å for EuAg 4 Sb 2 ), which can be derived from the trigonal CaAl 2 Si 2 -type structure of the isoelectronic zinc-containing pnictides AZn 2 Pn 2 by insertion of additional Ag atoms into trigonal planar sites within [M 2 Pn 2 ] 2− slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg 4 As 2 and SrAg 4 Sb 2 revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg 4 As 2 and related pnictides adopt a CaCu 4 P 2 -type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: ► AAg 4 Pn 2 are the first Ag-containing members of the CaCu 4 P 2 -type structure. ► Ag atoms are stuffed in trigonal planar sites within CaAl 2 Si 2 -type slabs. ► Ag–Ag bonding develops through attractive d 10 –d 10 interactions.

  15. Studies on antimony absorption on Carbon steel (CS) and magnetite coated CS at high temperature to investigate the problem of out of core Sb activity in PHWRs

    International Nuclear Information System (INIS)

    Keny, S.J.; Gokhale, B.K.; Kumbhar, A.G.; Bera, Santanu; Velmurugan, S.

    2014-01-01

    Sb from PHT (primary heat transfer) pump bearings of PHWRs (Pressurized Heavy Water Reactors) goes to the reactor core and gets activated to 121 Sb and 123 Sb. Subsequently, it deposits on out of core surface resulting in radiation exposure to station personnel's apparent high decontamination factors. Sb, thus deposited can't be impassivated by normal decontamination process. Earlier studies indicates lattice substitution of Sb +3 for Fe +2 in magnetite at low doping levels (≤5%). This process, at reactor conditions is yet to be well understood. To formulate an adequate decontamination formulation and methodology and for having insight at Sb deposition mechanism under rector conditions studies are performed

  16. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah; Singh, Nirpendra; Schwingenschlö gl, Udo

    2016-01-01

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  17. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah

    2017-01-08

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  18. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah M.

    2016-09-26

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  19. Systematic features of the structure of the heavy odd-mass Sb nuclides near the N = 82 closed shell

    International Nuclear Information System (INIS)

    Stone, C.A.; Robertson, J.D.; Faller, S.H.; Mantica, P.F.; Zimmerman, B.E.; Chung Chien; Walters, W.B.

    1995-01-01

    New data for the decay of 4.1 min 3/2 + 127 Sn to levels of 127 Sb, decay of 2.2 min 3/2 + 129 Sn to levels of 12 Sb and decay of ∼60 s 3/2 + 131 Sn to levels of 131 Sb are presented. The shift in level positions arising from the monopole interaction and core phonon structure as well as changes in beta decay patterns are discussed. (orig.)

  20. Microstructures and thermoelectric properties of GeSbTe based layered compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yan, F.; Zhu, T.J.; Zhao, X.B. [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China); Dong, S.R. [Zhejiang University, Department of Information and Electronics Engineering, Hangzhou (China)

    2007-08-15

    Microstructures and thermoelectric properties of Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge{sub 2}Sb{sub 2}Te{sub 5} compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} attained 0.975 x 10{sup -3} Wm{sup -1}K{sup -2} at 750 K and 0.767 x 10{sup -3} Wm{sup -1}K{sup -2} at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. (orig.)

  1. MOCVD growth and structural characterization of In-Sb-Te nanowires

    International Nuclear Information System (INIS)

    Selmo, S.; Fanciulli, M.; Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M.; Rotunno, E.; Lazzarini, L.

    2016-01-01

    In this work, the self-assembly of In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In 3 Sb 1 Te 2 and In-doped Sb 4 Te 1 NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO 2 ). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Determination of the enthalpy of fusion and thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys

    International Nuclear Information System (INIS)

    Zhai, W.; Zhou, K.; Hu, L.; Wei, B.

    2016-01-01

    Highlights: • The increasing Sn content reduces the liquidus temperature. • High Sn content results in lower enthalpy of fusion by polynomial functions. • The thermal diffusivity drops from the solid toward the semi-solid state. • Undercoolability of alloys with primary Cu_2Sb phase is stronger than others. - Abstract: The liquidus and solidus temperatures, enthalpy of fusion, and the temperature dependence of thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys were systematically measured by DSC and laser flash methods. It is found that both the liquidus temperature and the enthalpy of fusion decrease with the rise of Sn content, and their relationships with alloy composition were established by polynomial functions. The thermal diffusivity usually drops from the solid toward the semi-solid state. The undercoolability of those liquid Cu_6_0_−_xSn_xSb_4_0 alloys with primary Cu_2Sb solid phase is stronger than the others with primary β(SnSb) intermetallic compound, and the increase of cooling rate facilitates further undercooling. Microstructural observation indicates that both of the primary Cu_2Sb and β(SnSb) intermetallic compounds in ternary Cu_6_0_−_xSn_xSb_4_0 alloys grow in faceted mode, and develop into coarse flakes and polygonal blocks.

  3. New superconductor LaRhSb

    International Nuclear Information System (INIS)

    Nishigori, S.; Moriwaki, H.; Suzuki, T.; Fujita, T.; Tanaka, H.; Takabatake, T.; Fujii, H.

    1994-01-01

    Superconductivity in LaRhSb was newly found below the transition temperature T c = 2.67 K by the measurements of the electrical resistivity, magnetic susceptibility and specific heat in magnetic fields. The characteristics of the superconductivity determined in this study indicate that LaRhSb is a type II superconductor following the BCS theory. (orig.)

  4. DWPF Simulant CPC Studies For SB8

    Energy Technology Data Exchange (ETDEWEB)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected

  5. Microbiological reduction of Sb(V) in anoxic freshwater sediments

    Science.gov (United States)

    Oremland, Ronald S.; Kulp, Thomas R.; Miller, Laurence G.; Braiotta, Franco; Webb, Samuel M.; Kocar, Benjamin D; Blum, Jodi S.

    2014-01-01

    Microbiological reduction of millimolar concentrations of Sb(V) to Sb(III) was observed in anoxic sediments from two freshwater settings: (1) a Sb- and As-contaminated mine site (Stibnite Mine) in central Idaho and 2) an uncontaminated suburban lake (Searsville Lake) in the San Francisco Bay Area. Rates of Sb(V) reduction in anoxic sediment microcosms and enrichment cultures were enhanced by amendment with lactate or acetate as electron donors but not by H2, and no reduction occurred in sterilized controls. Addition of 2-14C-acetate to Stibnite Mine microcosms resulted in the production of 14CO2 coupled to Sb(V) reduction, suggesting that this process proceeds by a dissimilatory respiratory pathway in those sediments. Antimony(V) reduction in Searsville Lake sediments was not coupled to acetate mineralization and may be associated with Sb-resistance. The microcosms and enrichment cultures also reduced sulfate, and the precipitation of insoluble Sb(III)-sulfide complexes was a major sink for reduced Sb. The reduction of Sb(V) by Stibnite Mine sediments was inhibited by As(V), suggesting that As(V) is a preferred electron acceptor for the indigenous community. These findings indicate a novel pathway for anaerobic microbiological respiration and suggest that communities capable of reducing high concentrations of Sb(V) commonly occur naturally in the environment.

  6. Atomistic explanation of brittle failure of thermoelectric skutterudite CoSb3

    International Nuclear Information System (INIS)

    Li, Guodong; An, Qi; Goddard, William A.; Hanus, Riley; Zhai, Pengcheng; Zhang, Qingjie; Snyder, G. Jeffrey

    2016-01-01

    CoSb 3 based skutterudite thermoelectric material has superior thermoelectric properties, but the low fracture toughness prevents its widespread commercial application. To determine the origin of its brittle failure, we examined the response of shear deformation in CoSb 3 along the most plausible slip system (010)/<100>, using large-scale molecular dynamics simulations. We find that the brittle failure of CoSb 3 arises from the formation of shear bands due to the destruction of Sb4-rings and the slippage of Co-octahedraes. This leads to the breakage of Co-octahedraes and cavitation, resulting in the crack opening and mechanical failure.

  7. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  8. Electronic structure and high pressure phase transition in LaSb and CeSb

    International Nuclear Information System (INIS)

    Mathi Jaya, S.; Sanyal, S.P.

    1992-09-01

    The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

  9. Draft genome sequence of a monokaryotic model brown-rot fungus Postia (Rhodonia) placenta SB12

    Science.gov (United States)

    Jill Gaskell; Phil Kersten; Luis F. Larrondo; Paulo Canessa; Diego Martinez; David Hibbett; Monika Schmoll; Christian P. Kubicek; Angel T. Martinez; Jagjit Yadav; Emma Master; Jon Karl Magnuson; Debbie Yaver; Randy Berka; Kathleen Lail; Cindy Chen; Kurt LaButti; Matt Nolan; Anna Lipzen; Andrea Aerts; Robert Riley; Kerrie Barry; Bernard Henrissat; Robert Blanchette; Igor V. Grigoriev; Dan Cullen

    2017-01-01

    We report the genome of Postia (Rhodonia) placenta MAD-SB12, a homokaryotic wood decay fungus (Basidiomycota, Polyporales). Intensively studied as a representative brown rot decayer, the gene complement is consistent with the rapid depolymerization of cellulose but not lignin.

  10. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  11. Effects of Sb-doping on the formation of (K, Na)(Nb, Sb)O3 solid solution under hydrothermal conditions

    International Nuclear Information System (INIS)

    Su Likui; Zhu Kongjun; Bai Lin; Qiu Jinhao; Ji Hongli

    2010-01-01

    (K, Na)(Nb, Sb)O 3 (KNNS) lead-free peizoceramic powders were successfully synthesized by hydrothermal treatment at 240 o C for 8 h using the KOH, NaOH, Nb 2 O 5 and Sb 2 O 3 as raw materials. Effects of Sb-doping on the crystal structure and morphology of the as-prepared powders were investigated by powder X-ray diffraction (XRD), Raman spectra (Raman), scanning electron microscope (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). The Sb element was successfully doped into the alkaline niobate perovskite structure to form crystalline (K 0.7 Na 0.3 )(Nb 0.95 Sb 0.05 )O 3 lead-free piezoelectric ceramic powder, which has a hexagonal morphology due to the aggregation growth of small grains. Phase and morphology evolutions with the reaction time were also studied, and a possible formation mechanism was proposed.

  12. Enhanced thermoelectric performance with participation of F-electrons in β-Zn{sub 4}Sb{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Mian; Qin, Xiaoying, E-mail: xyqin@issp.ac.cn; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

    2014-01-25

    Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn{sub 4}Sb{sub 3}. • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn{sub 4}Sb{sub 3}. -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn{sub 4}Sb{sub 3} were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn{sub 4}Sb{sub 3} at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale.

  13. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

    International Nuclear Information System (INIS)

    Klem, J. F.; Blum, O.; Kurtz, S. R.; Fritz, I. J.; Choquette, K. D.

    2000-01-01

    We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 μm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 μm, and 2.1 kA/cm2 at 1.21 μm. (c) 2000 American Vacuum Society

  14. MOCVD growth and structural characterization of In-Sb-Te nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Selmo, S.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Milano (Italy); Cecchi, S.; Cecchini, R.; Wiemer, C.; Longo, M. [Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza (Italy); Rotunno, E.; Lazzarini, L. [IMEM-CNR, Parma (Italy)

    2016-02-15

    In this work, the self-assembly of In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In{sub 3}Sb{sub 1}Te{sub 2} and In-doped Sb{sub 4}Te{sub 1} NWs were obtained for different reactor pressures at 325 C. The parameters influencing the NW self-assembly were studied and the compositional, morphological, and structural analysis of the grown structures was performed, also comparing the effect of the used substrate (crystalline Si and SiO{sub 2}). In both cases, NWs of several micrometer in length and with diameters as small as 15 nm were obtained. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Microscopic local bonding and optically-induced switching for Ge{sub 2}Sb{sub 2}Te{sub 5} alloys: A tale of four pseudo-binary and three binary tie-lines in Ge-Sb-Te phase field

    Energy Technology Data Exchange (ETDEWEB)

    Lucovsky, G.; Baker, D.A.; Washington, J.P.; Paesler, M.A. [Department of Physics, North Carolina State University, Raleigh, NC (United States)

    2009-05-15

    Ge{sub 2}Sb{sub 2}Te{sub 5} (GST-225) has emerged as an active medium for applications in reversible, ReWritable (RW) optical memory discs. Many studies have focused on the properties of this alloy, relative to the other GST compositions on tie-lines in the Ge-Sb-Te ternary phase field; (i) Sb{sub 2}Te to GeTe{sub 2}: (ii) Sb{sub 2}Te{sub 3}: to GeTe; (iii) GeSb to Te: and (iv) the truncated tie-line from GST-124 to Sb. This article focuses instead on the binary atomic join-lines, Te-Ge, Ge-Sb and Sb-Te, that comprise the perimeter of the Ge-Sb-Te ternary diagram. Three eutectic compositions, one on each perimeter segment: (i) Ge{sub 12}Sb{sub 88}; (ii) Te{sub 25}Sb{sub 75}; and (iii) Ge{sub 17}Te{sub 83} have been identified. Focussing on the significance of these eutectic compositions, and (i) building on previous publications from our group, and (ii) relying on two recently published articles, a new model for the RW properties of GST-22T has been proposed. Finally comparisons are made between GST and AIST RW films. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb

    International Nuclear Information System (INIS)

    S Anikeev; D Donetsky; G Belenky; S Luryl; CA Wang; DA Shiau; M Dashiell; J Beausang; G Nichols

    2004-01-01

    Radiative coefficient (B) is a fundamental recombination parameter which is of importance for a variety of optoelectronic minority carrier devices. Radiative recombination was comprehensively studied for wide-bandgap III-V compounds, while for 0.5-0.6 eV materials experimental data are quite limited and demonstrate significant spreading. Here we report excess carrier lifetime in isotype double heterostructures (DHs) of 0.54-eV p-GaInAsSb capped with p-AlGaAsSb, and grown lattice-matched to GaSb. Lifetime was measured by time-resolved photoluminescence (dynamic lifetime) as well as by optical response to sinusoidal excitation (static lifetime). Wide range of GaInAsSb layer thickness was used to separate contributions from interface and radiative recombination processes. Radiative coefficient and recombination velocity at GaInAsSb/AlGaAsSb heterointerface were determined. Temperature dependence of lifetime demonstrated significant contribution of radiative effects to the total recombination

  17. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  18. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  19. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  20. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  1. Antimony (SbIII) reduces growth, declines photosynthesis, and modifies leaf tissue anatomy in sunflower (Helianthus annuus L.).

    Science.gov (United States)

    Vaculík, Marek; Mrázová, Anna; Lux, Alexander

    2015-12-01

    The role of antimony (Sb)--a non-essential trace metalloid--in physiological processes running in crops is still poorly understood. Present paper describes the effect of Sb tartrate (SbIII) on growth, Sb uptake, photosynthesis, photosynthetic pigments, and leaf tissue organization in young sunflower plants grown in hydroponics. We found that growth of below- and aboveground part was reduced with increasing concentration of Sb in the medium. Although Sb was mostly taken up by sunflower roots and only small part (1-2%) was translocated to the shoots, decline in photosynthesis, transpiration, and decreased content of photosynthetic pigments were observed. This indicates that despite relatively low mobility of Sb in root-shoot system, Sb in shoot noticeably modifies physiological status and reduced plant growth. Additionally, leaf anatomical changes indicated that Sb reduced the size of intercellular spaces and made leaf tissue more compact.

  2. Electronic structure and STM imaging of the KBr-InSb interface

    Energy Technology Data Exchange (ETDEWEB)

    Ciochoń, Piotr, E-mail: ciochon.piotr@gmail.com; Olszowska, Natalia; Kołodziej, Jacek J.

    2017-07-01

    Highlights: • The structure of the InSb (001) surface covered with thin KBr layers is reported. • KBr growth does not perturb strongly the structure of a clean InSb surface. • A model of the system with KBr treated as a thin dielectric layer is proposed. • The atomic structure of the KBr-InSb interface is directly imaged using STM. - Abstract: We study the properties of the InSb (001) surface covered with ultrathin KBr films, with a thickness of 1–4 ML. KBr deposition does not strongly perturb the crystallographic structure of the InSb surface and the electronic structure of the substrate also remains unaffected by the overlayer. A simple model of the studied system is proposed, in which a thin KBr layer is treated as a dielectric film, modifying potential barrier for the electrons tunneling to/from the InSb substrate. Apparent step heights on the KBr film, measured using scanning tunneling microscope (STM), agree well with the predictions of the model and the atomically-resolved STM images show the structure of the InSb-KBr interface. Our results demonstrate that STM may be used as a tool for investigations of the semiconductor–insulator interfaces.

  3. Subsolidus phase relations of the SrO–SbOx–CuO system at 1140K in air

    DEFF Research Database (Denmark)

    Grivel, J.-C.; Norby, Poul; Andersen, Niels Hessel

    2014-01-01

    The subsolidus phase relations of the SrO–SbOx–CuO system were investigated in air. The samples were equilibrated at 1140K. Under these conditions, 7 binary oxide phases are stable: Sr2CuO3, SrCuO2, Sr14Cu24O41−δ, CuSb2O6, SrSb2O6, Sr2Sb2O7 and Sr7Sb2O12. The ternary section contains 10 three...

  4. The Cu-Sb-Se phase system at temperatures between 350 and 700 degree C

    DEFF Research Database (Denmark)

    Karup-Møller, Sven

    1999-01-01

    Phase relations were determined in the Cu-Sb-Se phase system at 300o, 400o, 450o, 500o, 600o and 700oC. Five three-component phases are present at 300oC: permingeatite (Cu3SbSe4), phase A (Cu3SbSe3, the Se-equivalent to skinnerite Cu3SbS3), phase B (CuSbSe2, the Se-equivalent to chalcostibite Cu......SbS2), phase C (Cu5.04Sb35.9Se59.1) and phase D (Cu38.8Sb6.10Se55.1). An X-ray crystallographic study is currently in progress on phase C. Phase D is present in insufficient amounts for such a study. At 400oC phase C and D does not exist and at 500oC all solid ternary phase are absent. At 450oC two...

  5. Room-temperature broadband InAsSb flip-chip photodiodes with λcutoff = 4.5 μm

    International Nuclear Information System (INIS)

    Zakhgeim, A. L.; Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Chernyakov, A. E.

    2009-01-01

    Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n + -InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate's doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7-4.5 μm range is discussed.

  6. Antimony Redox Biotransformation in the Subsurface: Effect of Indigenous Sb(V) Respiring Microbiota.

    Science.gov (United States)

    Wang, Liying; Ye, Li; Yu, Yaqin; Jing, Chuanyong

    2018-02-06

    Anaerobic microbiological antimonate [Sb(V)] respiration is a newly discovered process regulating the Sb redox transformation in soils. However, little is known about the role microbiological Sb(V) respiration plays in the fate of Sb in the subsurface, especially in the presence of sulfate and electron shuttles. Herein, we successfully enriched a Sb(V) reducing microbiota (SbRM) from the subsurface near an active Sb mine. SbRM was dominated by genus Alkaliphilus (18-36%), Clostridiaceae (17-18%), Tissierella (24-27%), and Lysinibacillus (16-37%). The incubation results showed that SbRM reduced 88% of dissolved Sb(V) to Sb(III), but the total Sb mobility remained the same as in the abiotic control, indicating that SbRM alone did not increase the total Sb release but regulated the Sb speciation in the subsurface. Micro X-ray fluorescence (μ-XRF) analysis suggested the association of Sb and Fe, and electron shuttles such as anthraquinone-2,6-disulfonic disodium salt (AQDS) markedly enhanced the Sb release due to its ability to facilitate Fe mineral dissolution. Sb L-edge and S K-edge X-ray absorption near edge structure (XANES) results demonstrated that indigenous SbRM immobilized Sb via Sb 2 S 3 formation, especially in a sulfur-rich environment. The insights gained from this study shed new light on Sb mobilization and its risk assessment in the subsurface environment.

  7. Scanning thermal microscopy of Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thermoelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Zeipl, Radek; Remsa, Jan; Kocourek, Tomas [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Jelinek, Miroslav [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Vanis, Jan [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Institute of Photonics and Electronics ASCR v.v.i., Prague (Czech Republic); Navratil, Jiri [Institute of Macromolecular Chemistry ASCR v.v.i., Prague (Czech Republic)

    2016-04-15

    Thermal conductivity of thermoelectric Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 C. The room temperature thermal conductivity of the layers was estimated from thermoelectric figure of merit that was measured by the Harman technique, in which parameters related to electrical conductivity, Seebeck coefficient and thermal conductivity are measured at the same place and at the same time with electrical current flowing through the layer. For Yb{sub 0.19}Co{sub 4}Sb{sub 12} and Bi{sub 2}Te{sub 3} layers, we observed room temperature electrical resistivity of about 7 and 1 mΩcm, the Seebeck coefficient of -112 and -61μVK{sup -1}, thermoelectric figure of merit about 0.04 and 0.13 and we estimated thermal conductivity of about 1.3 and 0.9 WK{sup -1}m{sup -1}, respectively. (orig.)

  8. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  9. Atmospheric Sb in the Arctic during the past 16,000 years: Responses to climate change and human impacts

    Science.gov (United States)

    Krachler, Michael; Zheng, Jiancheng; Fisher, David; Shotyk, William

    2008-03-01

    Applying strict clean room procedures and sector field inductively coupled plasma mass spectrometry (ICP-MS) methods, concentrations of Sb and Sc were determined in 57 sections of a 170.6-m-long ice core drilled on Devon Island, Arctic Canada, in 1999, providing a record of atmospheric Sb extending back 15,800 years. Natural background concentrations of Sb and Sc established during the period between 1300 years BP and 10,590 years BP averaged 0.08 ± 0.03 pg/g (N = 18) and 0.44 ± 0.20 pg/g (N = 17), respectively. Scandium, a conservative reference element, was used as a surrogate for mineral dust inputs. The Sb/Sc ratio of 0.13 ± 0.07 in these ancient ice samples is comparable to the corresponding ratio of 0.09 ± 0.03 in peat samples from Switzerland from circa 6000 to 9000 years BP, indicating that this natural background ratio might have a much broader validity. The natural background flux of Sb (0.7 ± 0.5 ng/m2/a) in the Arctic was approximately 500 times lower than that established in central Europe using peat cores. For comparison with background values, modern Sb fluxes calculated using 45 samples from a 5-m snow pit dug on Devon Island in 2004, reflecting 10 years of snow accumulation, yielded an average deposition rate of 340 ± 270 ng/m2/a (range: 20-1240 ng/m2/a) with pronounced accumulation of Sb during winter periods when air masses reaching the Arctic predominantly come from Eurasia. These data reveal that approximately 99.8% of the Sb deposited in the Arctic today originates from anthropogenic activities. Modern Sb enrichment factors averaged 25 (range: 8-121). The ice core provides evidence of Sb contamination dating from Phoenician/Greek, Roman, and medieval lead mining and smelting in Europe. Moreover, the ice core data indicate that anthropogenic sources of Sb have continuously dominated the atmospheric inputs to the Arctic for at least 700 years.

  10. The system Sb2Te3-InS

    International Nuclear Information System (INIS)

    Safarov, M.G.; Gamidov, R.S.; Poladov, P.M.

    1991-01-01

    The system Sb 2 Te 3 -InS was investigated by the methods of physicochemical analysis. Its state diagram was constructed. It represents the stable diagonal of the mutual ternary system InTe-Sb 2 Te 3 -Sb 2 S 3 -InS. It was established that limited regions of α- and β-solid solutions on the basis of Sb 2 Te 3 and InS, achieving 15.5 and 8 mol.% respectively, formed in the system. Lattice periods of α- and β-solid solutions, their lattice volumes, number of atoms in them and densities were calculated

  11. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling

  12. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  13. N-doped Sb2Te phase change materials for higher data retention

    International Nuclear Information System (INIS)

    Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

    2011-01-01

    Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

  14. Synthesis crystal stuctrure and thermoelectric properties of the ternary skutterudite Fe2Pd2Sb12

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Laufek, F.; Plecháček, T.; Plášil, J.

    2010-01-01

    Roč. 493, 1-2 (2010), s. 50-54 ISSN 0925-8388 R&D Projects: GA ČR GA203/07/0267 Institutional research plan: CEZ:AV0Z40500505 Keywords : Fe2Pd2Sb12 * crystal structure * skutterudite Subject RIV: CA - Inorganic Chemistry Impact factor: 2.138, year: 2010

  15. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    Directory of Open Access Journals (Sweden)

    Stefano Cecchi

    2017-02-01

    Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

  16. Ionothermal Synthesis, Structure, and Bonding of the Catena -Heteropolycation 1 ∞ [Sb 2 Se 2 ] +

    KAUST Repository

    Groh, Matthias F.

    2015-01-26

    The reaction of antimony and selenium in the Lewis-acidic ionic liquid 1-butyl-3-methyl-imidazolium tetrachloridoaluminate, [BMIm]Cl•4.7AlCl3, yielded dark-red crystals of [Sb2Se2]AlCl4. The formation starts above 160 ° C; at about 190 ° C, irreversible decomposition takes place. The compound crystallizes in the triclinic space group P 1¯ with a = 919.39(2) pm, b = 1137.92(3) pm, c = 1152.30(3) pm, α = 68.047(1)° , β = 78.115(1)° , γ = 72.530(1)° , and Z = 4. The structure is similar to that of [Sb2Te2]AlCl4 but has only half the number of crystallographically independent atoms. Polycationic chains 1∞ [Sb2Se2]+ form a pseudo-hexagonal arrangement along [011¯] ], which is interlaced by tetrahedral AlCl4 - groups. The catena-heteropolycation 1∞ [Sb2Se2]+ is a sequence of three different four-membered [Sb2Se2 ] rings. The chemical bonding scheme, established from the topological analysis of the real-space bonding indicator ELI-D, includes significantly polar covalent bonding in four-member rings withinthepolycation.Theringsareconnectedintoaninfinitechainbyhomonuclear non-polar Sb-Sb bonds and highly polar Sb-Se bonds. Half of the selenium atoms are three-bonded.

  17. Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2014-02-05

    Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

  18. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

    DEFF Research Database (Denmark)

    Ren, Dingding; Dheeraj, Dasa L.; Jin, Chengjun

    2016-01-01

    and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses...

  19. Transport properties of PrxOs4Sb12 single crystals with high Pr-site filling fraction grown under high pressure

    International Nuclear Information System (INIS)

    Tanaka, Kenya; Namiki, Takahiro; Saito, Takashi; Tatsuoka, Sho; Imamura, Atsushi; Kuwahara, Keitaro; Aoki, Yuji; Sato, Hideyuki

    2009-01-01

    We have succeeded in growing Pr x Os 4 Sb 12 single crystals under ∼4GPa with high Pr-site filling fraction x. The electrical resistance measurements clearly show that the superconducting (SC) transition is sharper and the onset temperatures is lower in the single crystal samples grown under high pressure compared to that of the sample grown under ambient pressure. These results suggest that the double SC transition ascribed to sample inhomogeneity is suppressed in the sample grown under high pressure. The change of 4f-electron crystalline electric field energy splitting between the Γ 1 ground state and the Γ 4 (2) first excited state in the sample made under high pressure is proposed as one of the possible origins of the suppression of the double SC transition.

  20. Bi-induced band gap reduction in epitaxial InSbBi alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Alaria, J.; Veal, T. D., E-mail: T.Veal@liverpool.ac.uk [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Yu, K. M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Bomphrey, J. J.; Jones, T. S.; Ashwin, M. J., E-mail: M.J.Ashwin@warwick.ac.uk [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Sallis, S.; Piper, L. F. J. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-11-24

    The properties of molecular beam epitaxy-grown InSb{sub 1−x}Bi{sub x} alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb{sub 0.976}Bi{sub 0.024}, a reduction of ∼35 meV/%Bi.

  1. A review of Pb-Sb(As-S, Cu(Ag-Fe(Zn-Sb(As-S, Ag(Pb-Bi(Sb-S and Pb-Bi-S(Te sulfosalt systems from the Boranja orefield, West Serbia

    Directory of Open Access Journals (Sweden)

    Radosavljević Slobodan A.

    2016-01-01

    Full Text Available Recent mineralogical, chemical, physical, and crystallographic investigations of the Boranja orefield showed very complex mineral associations and assemblages where sulfosalts have significant role. The sulfosalts of the Boranja orefield can be divided in four main groups: (i Pb-Sb(As-S system with ±Fe and ±Cu; (ii Cu(Ag-Fe(Zn-Sb(As-S system; (iii Ag(Pb-Bi(Sb-S; (iv and Pb-Bi-S(Te system. Spatially, these sulfosalts are widely spread, however, they are the most abundant in the following polymetallic deposits and ore zones: Cu(Bi-FeS Kram-Mlakva; Pb(Ag-Zn-FeS2 Veliki Majdan (Kolarica-Centralni revir-Kojići; Sb-Zn-Pb-As Rujevac; and Pb-Zn-FeS2-BaSO4 Bobija. The multi stage formation of minerals, from skarnhydrothermal to complex hydrothermal with various stages and sub-stages has been determined. All hydrothermal stages and sub-stages of various polymetallic deposits and ore zones within the Boranja orefield are followed by a variety of sulfosalts. [Projekat Ministarstva nauke Republike Srbije, br. OI-176016: Magmatism and geodynamics of the Balkan Peninsula from Mesozoic to present day: Significance for the formation of metallic and non-metallic mineral deposits

  2. High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Höglund, Linda; Hill, Cory J.; Keo, Sam A.; Fisher, Anita; Gunapala, Sarath D.

    2016-09-01

    The high-temperature characteristics of a mid-wavelength infrared (MWIR) detector based on the Maimon-Wicks InAsSb/AlAsSb nBn architecture was analyzed. The dark current characteristics are examined in reference to recent minority carrier lifetime results. The difference between the responsivity and absorption quantum efficiency (QE) at shorter wavelengths is clarified in terms of preferential absorption of higher-energy photons in the top contact layer, which cannot provide reverse-bias photo-response due to the AlAsSb electron blocking layer and strong recombination. Although the QE does not degrade when the operating temperature increases to 325 K, the turn-on bias becomes larger at higher temperatures. This behavior was originally attributed to the change in the valence band alignment between the absorber and top contact layers caused by the shift in Fermi level with temperature. In this work, we demonstrated the inadequacy of the original description, and offer a more likely explanation based on temperature-dependent band-bending effects.

  3. Microstructure and thermoelectric properties of doped p-type CoSb3 under TGZM effect

    Science.gov (United States)

    Wang, Hongqiang; Li, Shuangming; Li, Xin; Zhong, Hong

    2017-05-01

    The Co-96.9 wt% Sb hypoeutectic alloy doped by 0.12 wt% YbFe was solidified in a Bridgman-type furnace based on temperature gradient zone melting (TGZM) effect. A mushy zone was observed between the complete liquid zone and the solid zone at different thermal stabilization time ranging from 15 min to 40 h. The mushy-zone solidified microstructures of the alloy only consist of CoSb3 and Sb phase. After 40 h thermal stabilization time, the volume fraction of CoSb3 in the mushy zone increases significantly up to 99.6% close to the solid-liquid interface. The hardness and fracture toughness of doped CoSb3 can reach 7.01 ± 0.69 GPa and 0.78 ± 0.08 MPa·m1/2, respectively. Meanwhile, the thermoelectric properties of the alloy were measured ranging from room temperature (RT) to 850 K. The Seebeck coefficient of the specimen prepared by TGZM effect after 40 h could reach 155 μV/K and the ZT value is 0.47 at 660 K, showing that it is feasible to prepare CoSb3 bulk material via TGZM effect. As a simple and one-step solidification method, the TGZM technique could be applied in the preparation of skutterudite compounds.

  4. Old friends in a new light: 'SnSb' revisited

    International Nuclear Information System (INIS)

    Noren, Lasse; Withers, Ray L.; Schmid, Siegbert; Brink, Frank J.; Ting, Valeska

    2006-01-01

    The binary pnictide 'SnSb' has been re-investigated using a combination of X-ray, synchrotron and electron diffraction as well as electron microprobe analysis. Its structure was found to be incommensurately modulated with an underlying rhombohedral parent structure of space group symmetry R3-bar m (No. 166), unit cell parameters a h =b h =4.3251(4)A, c h =5.3376(6)A in the hexagonal setting. The incommensurate primary modulation wave vector q h =1.3109(9)c h * and the superspace group symmetry is R3-bar m (0, 0, ∼1.311) (No. 166.1). The refinement of the incommensurate structure indicates that the satellite reflections arise from displacive shifts of presumably essentially pure Sn and Sb layers along the hexagonal c-axis, with increasing distance between the Sn-layers and decreasing distance between the Sb layers

  5. Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

    International Nuclear Information System (INIS)

    Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

    2006-01-01

    In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

  6. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

  7. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

  8. Investigation of InAs/GaSb-based superlattices by diffraction methods

    Energy Technology Data Exchange (ETDEWEB)

    Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

    2010-02-15

    We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

  9. Brain imaging of serotonin 4 receptors in humans with [11C]SB207145-PET

    DEFF Research Database (Denmark)

    Marner, Lisbeth; Gillings, Nic; Madsen, Karine

    2010-01-01

    Pharmacological stimulation of the serotonin 4 (5-HT(4)) receptor has shown promise for treatment of Alzheimer's disease and major depression. A new selective radioligand, [(11)C]SB207145, for positron emission tomography (PET) was used to quantify brain 5-HT(4) receptors in sixteen healthy......(max) was in accordance with post-mortem brain studies (Spearman's r=0.83, p=0.04), and the regional binding potentials, BP(ND), were on average 2.6 in striatum, 0.42 in prefrontal cortex, and 0.91 in hippocampus. We found no effect of sex but a decreased binding with age (p=0.046). A power analysis showed that, given......-HT(4) receptor binding in human brain can be reliably assessed with [(11)C]SB207145, which is encouraging for future PET studies of drug occupancy or patients with neuropsychiatric disorders....

  10. First principles simulation of amorphous InSb

    Science.gov (United States)

    Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

    2013-05-01

    Ab initio molecular dynamics simulations based on density functional theory have been performed to generate a model of amorphous InSb by quenching from the melt. The resulting network is mostly tetrahedral with a minor fraction (10%) of atoms in a fivefold coordination. The structural properties are in good agreement with available x-ray diffraction and extended x-ray-absorption fine structure data and confirm the proposed presence of a sizable fraction of homopolar In-In and Sb-Sb bonds whose concentration in our model amounts to about 20% of the total number of bonds.

  11. Structural transition of (InSb)n clusters at n = 6-10

    Science.gov (United States)

    Lu, Qi Liang; Luo, Qi Quan; Huang, Shou Guo; Li, Yi De

    2016-10-01

    An optimization strategy combining global semi-empirical quantum mechanical search with all-electron density functional theory was adopted to determine the lowest energy structure of (InSb)n clusters with n = 6-10. A new structural growth pattern of the clusters was observed. The lowest energy structures of (InSb)6 and (InSb)8 were different from that of previously reported results. Competition existed between core-shell and cage-like structures of (InSb)8. The structural transition of (InSb)n clusters occurred at size n = 8-9. For (InSb)9 and (InSb)10 clusters, core-shell structure were more energetically favorable than the cage. The corresponding electronic properties were investigated.

  12. Thermoelectric properties of c-GeSb{sub 0.75}Te{sub 0.5} to h-GeSbTe{sub 0.5} thin films through annealing treatment effects

    Energy Technology Data Exchange (ETDEWEB)

    Vora-ud, Athorn, E-mail: athornvora-ud@snru.ac.th [Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Thermoelectrics Research Center, Research and Development Institution, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Horprathum, Mati, E-mail: mati.horprathum@nectec.or.th [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Eiamchai, Pitak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Muthitamongkol, Pennapa; Chayasombat, Bralee; Thanachayanont, Chanchana [National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Pankiew, Apirak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Klamchuen, Annop [National Nanotechnology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Naenkieng, Daengdech; Plirdpring, Theerayuth; Harnwunggmoung, Adul [Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon, Si Ayutthaya 13000 (Thailand); Charoenphakdee, Anek [NANO-Thermoelectrics Research Center, Division of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Mueng Nakorn Ratchasima 30000 Thailand (Thailand); Somkhunthot, Weerasak [Program of Physics, Faculty of Science and Technology, Loei Rajabhat University, Muang District, Loei 42000 (Thailand); and others

    2015-11-15

    Germanium–Antimony–Tellurium (Ge–Sb–Te) thin films were deposited on silicon wafers with 1-μm silicon dioxide (SiO{sub 2}/Si) by pulsed dc magnetron sputtering from a 99.99% GeSbTe target of 1:1:1 ratio at ambient temperature. The samples were annealed at 573, 623, 673, and 723 K for 3600 s in a vacuum state. The effects of the annealing treatment on phase identification, atomic composition, morphology and film thickness, carrier concentration, mobility, and Seebeck coefficient of the Ge–Sb–Te samples have been investigated by grazing-incidence X-ray diffraction, auger electron spectroscopy, field-emission scanning electron microscopy, Hall-effect measurements, and steady state method, respectively. The results demonstrated that the as-deposited Ge–Sb–Te sample was amorphous. Atomic composition of as-deposited and annealed films at 573 K and 623 K were GeSb{sub 0.75}Te{sub 0.5} while annealed films at 673 K and 723 K were GeSbTe{sub 0.5} due to Sb-rich GeSb{sub 0.75}Te{sub 0.5}. The samples annealed at 573 K and 623 K showed the crystal phases of cubic structure (c-GeSb{sub 0.75}Te{sub 0.5}) into hexagonal structure (h-GeSbTe{sub 0.5}) after annealing at 673 K and 723 K. The study demonstrated the insulating condition from the as-deposited GeSbTe film, and the changes towards the thermoelectric properties from the annealing treatments. The GeSbTe films annealed at 673 K yielded excellent thermoelectric properties with the electrical resistivity, Seebeck coefficient, and power factor at approximately 1.45 × 10{sup −5} Ωm, 71.07 μV K{sup −1}, and 3.48 × 10{sup −4} W m{sup −1} K{sup −2}, respectively. - Highlights: • GeSbTe thin films were successfully sputtered for thermoelectric properties. • GeSbTe films were examined among physical, electrical and thermoelectric properties. • Thermoelectric properties were discussed based on composition of the films.

  13. Yb14MnSb11 as a High-Efficiency Thermoelectric Material

    Science.gov (United States)

    Snyder, G. Jeffrey; Gascoin, Franck; Brown, Shawna; Kauzlarich, Susan

    2009-01-01

    Yb14MnSb11 has been found to be wellsuited for use as a p-type thermoelectric material in applications that involve hotside temperatures in the approximate range of 1,200 to 1,300 K. The figure of merit that characterizes the thermal-to-electric power-conversion efficiency is greater for this material than for SiGe, which, until now, has been regarded as the state-of-the art high-temperature ptype thermoelectric material. Moreover, relative to SiGe, Yb14MnSb11 is better suited to incorporation into a segmented thermoelectric leg that includes the moderate-temperature p-type thermoelectric material CeFe4Sb12 and possibly other, lower-temperature p-type thermoelectric materials. Interest in Yb14MnSb11 as a candidate high-temperature thermoelectric material was prompted in part by its unique electronic properties and complex crystalline structure, which place it in a class somewhere between (1) a class of semiconducting valence compounds known in the art as Zintl compounds and (2) the class of intermetallic compounds. From the perspective of chemistry, this classification of Yb14MnSb11 provides a first indication of a potentially rich library of compounds, the thermoelectric properties of which can be easily optimized. The concepts of the thermoelectric figure of merit and the thermoelectric compatibility factor are discussed in Compatibility of Segments of Thermo - electric Generators (NPO-30798), which appears on page 55. The traditional thermoelectric figure of merit, Z, is defined by the equation Z = alpha sup 2/rho K, where alpha is the Seebeck coefficient, rho is the electrical resistivity, and k is the thermal conductivity.

  14. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  15. Heavy fermion behaviour in the high pressure structure of CeSb{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseev, Vitaly; Feng, Zhuo; Zou, Yang; Grosche, F. Malte [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Giles, Terence; Niklowitz, Philipp [Department of Physics, Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Wilhelm, Heribert [Beamline I15, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Lampronti, Giulio [Department of Earth Sciences, University of Cambridge, Cambridge CB2 3EQ (United Kingdom)

    2015-07-01

    The Kondo lattice system CeSb{sub 2} crystallises in the orthorhombic SmSb{sub 2} structure and exhibits a series of magnetic phase transitions at low temperature. It has been reported to become ferromagnetic below 15 K, with the ordered moment oriented within the basal plane, and to undergo two further transitions at 9K and 12K. These transition are suppressed above a hydrostatic pressure p{sub c} ≅ 16 kbar. We present high pressure transport and x-ray diffraction results, which examine the high pressure state of CeSb{sub 2}. Our findings suggest that CeSb{sub 2} undergoes a drastic structural change at p{sub c} into a new and now fully resolved crystal structure. Whereas in the low pressure structure, CeSb{sub 2} is a local moment magnet, in the high pressure structure it exhibits transport properties characteristic of a heavy fermion material with a low Kondo temperature scale of the order of 10 K.

  16. Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

    OpenAIRE

    Toginho Filho, D. O.; Dias, I. F. L.; Duarte, J. L.; Laureto, E.

    2006-01-01

    We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor an...

  17. Magneto-optical properties of InSb for terahertz applications

    Directory of Open Access Journals (Sweden)

    Jan Chochol

    2016-11-01

    Full Text Available Magneto-optical permittivity tensor spectra of undoped InSb, n-doped and p-doped InSb crystals were determined using the terahertz time-domain spectroscopy (THz-TDS and the Fourier transform far-infrared spectroscopy (far-FTIR. A Huge polar magneto-optical (MO Kerr-effect (up to 20 degrees in rotation and a simultaneous plasmonic behavior observed at low magnetic field (0.4 T and room temperature are promising for terahertz nonreciprocal applications. We demonstrate the possibility of adjusting the the spectral rage with huge MO by increase in n-doping of InSb. Spectral response is modeled using generalized magneto-optical Drude-Lorentz theory, giving us precise values of free carrier mobility, density and effective mass consistent with electric Hall effect measurement.

  18. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Nithyadharseni, P. [Department of Physics, Bannari Amman Institute of Technology, Sathyamangalam 638402 (India); Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Reddy, M.V., E-mail: phymvvr@nus.edu.sg [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Nalini, B., E-mail: lalin99@rediffmail.com [Department of Physics, Avinashilingam University for Women, Coimbatore 641043 (India); Ravindran, T.R. [Centre for Research in Nanotechnology, Karunya University, Coimbatore 641114 (India); Pillai, B.C.; Kalpana, M. [Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Chowdari, B.V.R. [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore)

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  19. Analysis of the Structures and Properties of (GaSb)n (n = 4-9) Clusters through Density Functional Theory.

    Science.gov (United States)

    Lu, Qi Liang; Luo, Qi Quan; Huang, Shou Guo; Li, Yi De; Wan, Jian Guo

    2016-07-07

    An optimization strategy combining global semiempirical quantum mechanical search with all-electron density functional theory was adopted to determine the lowest energy structure of (GaSb)n clusters up to n = 9. The growth pattern of the clusters differed from those of previously reported group III-V binary clusters. A cagelike configuration was found for cluster sizes n ≤ 7. The structure of (GaSb)6 deviated from that of other III-V clusters. Competition existed between core-shell and hollow cage structures of (GaSb)7. Novel noncagelike structures were energetically preferred over the cages for the (GaSb)8 and (GaSb)9 clusters. Electronic properties, such as vertical ionization potential, adiabatic electron affinities, HOMO-LUMO gaps, and average on-site charges on Ga or Sb atoms, as well as binding energies, were computed.

  20. GPU-powered model analysis with PySB/cupSODA.

    Science.gov (United States)

    Harris, Leonard A; Nobile, Marco S; Pino, James C; Lubbock, Alexander L R; Besozzi, Daniela; Mauri, Giancarlo; Cazzaniga, Paolo; Lopez, Carlos F

    2017-11-01

    A major barrier to the practical utilization of large, complex models of biochemical systems is the lack of open-source computational tools to evaluate model behaviors over high-dimensional parameter spaces. This is due to the high computational expense of performing thousands to millions of model simulations required for statistical analysis. To address this need, we have implemented a user-friendly interface between cupSODA, a GPU-powered kinetic simulator, and PySB, a Python-based modeling and simulation framework. For three example models of varying size, we show that for large numbers of simulations PySB/cupSODA achieves order-of-magnitude speedups relative to a CPU-based ordinary differential equation integrator. The PySB/cupSODA interface has been integrated into the PySB modeling framework (version 1.4.0), which can be installed from the Python Package Index (PyPI) using a Python package manager such as pip. cupSODA source code and precompiled binaries (Linux, Mac OS/X, Windows) are available at github.com/aresio/cupSODA (requires an Nvidia GPU; developer.nvidia.com/cuda-gpus). Additional information about PySB is available at pysb.org. paolo.cazzaniga@unibg.it or c.lopez@vanderbilt.edu. Supplementary data are available at Bioinformatics online. © The Author(s) 2017. Published by Oxford University Press.

  1. Room-temperature broadband InAsSb flip-chip photodiodes with {lambda}{sub cutoff} = 4.5 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Zakhgeim, A L [Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicron Heterostructures at Ioffe Physicotechnical Institute (Russian Federation); Zotova, N V; Il' inskaya, N D; Karandashev, S A; Matveev, B. A., E-mail: bmat@iropt3.ioffe.rssi.ru; Remennyi, M A; Stus' , N M [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Chernyakov, A E [Russian Academy of Sciences, Scientific-Technological Center for Microelectronics and Submicron Heterostructures at Ioffe Physicotechnical Institute (Russian Federation)

    2009-03-15

    Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n{sup +}-InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influence of the substrate's doping level and mesa depth on the quantum efficiency and sensitivity of a backside illuminated photodiode sensitive in the 2.7-4.5 {mu}m range is discussed.

  2. Positron annihilation studies of high dose Sb implanted silicon

    International Nuclear Information System (INIS)

    Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

    2005-01-01

    The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

  3. OMVPE growth of GaInAsSb in the 2 to 2.4 microm range

    International Nuclear Information System (INIS)

    Charache, G.W.; Wang, C.A.

    1997-12-01

    Ga 1-x In x As y Sb 1-y epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy using all organometallic precursors, which include triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. Layers were grown over a temperature range between 525 and 575 C, a V/III ratio range between 0.9 and 1.7, x 15 cm -3 and hole mobility of ∼ 430 to 560 cm 2 /V-s. The n- and p-type doping of GaInAsSb with diethyltellurium and dimethylzinc, respectively, are also reported

  4. SULFURIC ACID CORROSION OF LOW Sb - Pb BATTERY ALLOYS

    African Journals Online (AJOL)

    user

    1983-09-01

    Sep 1, 1983 ... (Manuscript received February,1983). ABSTRACT. The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional. Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and ...

  5. Probing Photocatalytic Characteristics of Sb-Doped TiO2 under Visible Light Irradiation

    Directory of Open Access Journals (Sweden)

    Lingjing Luo

    2014-01-01

    Full Text Available Sb-doped TiO2 nanoparticle with varied dopant concentrations was synthesized using titanium tetrachloride (TiCl4 and antimony chloride (SbCl3 as the precursors. The properties of Sb-doped TiO2 nanoparticles were characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, fluorescence spectrophotometer, and Uv-vis spectrophotometer. The absorption edge of TiO2 nanoparticles could be extended to visible region after doping with antimony, in contrast to the UV absorption of pure TiO2. The results showed that the photocatalytic activity of Sb-doped TiO2 nanoparticles was much more active than pure TiO2. The 0.1% Sb-doped TiO2 nanoparticles demonstrated the best photocatalytic activity which was better than that of the Degussa P25 under visible light irradiation using terephthalic acid as fluorescent probe. The effects of Sb dopant on the photocatalytic activity and the involved mechanism were extensively investigated in this work as well.

  6. Study for material analogs of FeSb2: Material design for thermoelectric materials

    Science.gov (United States)

    Kang, Chang-Jong; Kotliar, Gabriel

    2018-03-01

    Using the ab initio evolutionary algorithm (implemented in uspex) and electronic structure calculations we investigate the properties of a new thermoelectric material FeSbAs, which is a material analog of the enigmatic thermoelectric FeSb2. We utilize the density functional theory and the Gutzwiller method to check the energetics. We find that FeSbAs can be made thermodynamically stable above ˜30 GPa. We investigate the electronic structure and thermoelectric properties of FeSbAs based on the density functional theory and compare with those of FeSb2. Above 50 K, FeSbAs has higher Seebeck coefficients than FeSb2. Upon doping, the figure of merit becomes larger for FeSbAs than for FeSb2. Another material analog FeSbP, was also investigated, and found thermodynamically unstable even at very high pressure. Regarding FeSb2 as a member of a family of compounds (FeSb2, FeSbAs, and FeSbP) we elucidate what are the chemical handles that control the gaps in this series. We also investigate solubility (As or P for Sb in FeSb2) we found As to be more soluble. Finally, we study a two-band model for thermoelectric properties and find that the temperature dependent chemical potential and the presence of the ionized impurities are important to explain the extremum in the Seebeck coefficient exhibited in experiments for FeSb2.

  7. Thermoelectric properties and microstructure of Mg3Sb2

    International Nuclear Information System (INIS)

    Condron, Cathie L.; Kauzlarich, Susan M.; Gascoin, Franck; Snyder, G. Jeffrey

    2006-01-01

    Mg 3 Sb 2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg 3 Sb 2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K. - Graphical abstract: Dimensionless figure of merit for Mg 3 Sb 2 hot pressed and sintered at 873 K. The inset illustrates the crystal structure of Mg 3 Sb 2 along the [100] direction (white=Mg, black=Sb)

  8. Structural and physical properties of Mg3-xZnxSb2 (x=0-1.34)

    International Nuclear Information System (INIS)

    Ahmadpour, Faraz; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

    2007-01-01

    The Mg 3-x Zn x Sb 2 phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg 3-x Zn x Sb 2 phases crystallize in the same P3-bar m1 space group as the parent Mg 3 Sb 2 phase. The Mg 3-x Zn x Sb 2 structure is different from the other substituted structures of Mg 3 Sb 2 , such as (Ca, Sr, Ba) Mg 2 Sb 2 or Mg 5.23 Sm 0.77 Sb 4 , in a way that in Mg 3-x Zn x Sb 2 the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg 3 Sb 2 and Mg 2.36 Zn 0.64 Sb 2 , was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg 3 Sb 2 which is a semiconductor, Mg 2.36 Zn 0.64 Sb 2 is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg 2.36 Zn 0.64 Sb 2 is still poor and it is mostly due to its large electrical resistivity. - Graphical abstract: The Mg atoms in Mg 3 Sb 2 were successfully substituted with Zn, with Zn going exclusively into the tetrahedral sites. Zn substitution increases the electrical conductivity in Mg 2.36 Zn 0.64 Sb 2 by closing the band gap. This change combined with a decrease in the thermal conductivity improves the ZT value

  9. Designing new lithium-excess cathode materials from percolation theory: nanohighways in Li(x)Ni(2-4x/3)Sb(x/3)O2.

    Science.gov (United States)

    Twu, Nancy; Li, Xin; Urban, Alexander; Balasubramanian, Mahalingam; Lee, Jinhyuk; Liu, Lei; Ceder, Gerbrand

    2015-01-14

    Increasing lithium content is shown to be a successful strategy for designing new cathode materials. In layered Li(x)Ni(2-4x/3)Sb(x/3)O2 (x = 1.00-1.15), lithium excess improves both discharge capacity and capacity retention at 1C. Structural studies reveal a complex nanostructure pattern of Li-Sb and Ni-Sb ordering where the interface between these domains forms the correct local configuration for good lithium mobility. The <1 nm Li-Sb stripe domains and their interfaces thereby effectively act as nanohighways for lithium diffusion.

  10. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  11. The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

    International Nuclear Information System (INIS)

    Mohammad, Rezek; Katircioglu, Senay

    2009-01-01

    The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

  12. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

    International Nuclear Information System (INIS)

    Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

    2014-01-01

    Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

  13. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Ivanov, E.V.; Moiseev, K. D.; Yakovlev, Yu. P.; Hulicius, Eduard; Hospodková, Alice; Pangrác, Jiří; Šimeček, Tomislav

    2010-01-01

    Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826 Institutional research plan: CEZ:AV0Z10100521 Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.603, year: 2010

  14. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

    2015-12-15

    Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

  15. Single-Longitudinal-Mode In-GaAsSb/AlGaAsSb Lasers for Gas Sensing

    International Nuclear Information System (INIS)

    Barrios, P.; Gupta, J.; Lapointe, J.; Aers, G.; Storey, C.

    2009-01-01

    Regrowth-free gain-coupled Ga Sb-based Dfb lasers suitable for gas sensing were fabricated. Threshold currents for 2.4μm emission of 400μm-long Dfb devices were 45mA with a total output power of nearly 11mW in C W operation at 20 o C. (Author)

  16. Phytoremediation of Sb, As, Cu, and Zn from contaminated water by the aquatic macrophyte eleocharis acicularis

    Energy Technology Data Exchange (ETDEWEB)

    Sakakibara, Masayuki [Graduate School of Science and Engineering, Ehime University, Ehime (Japan); Sano, Sakae [Faculty of Education, Ehime University, Ehime (Japan); Ha, Nguyen Thi Hoang

    2009-09-15

    Sb, As, Cu, and Zn toxicity and contamination have become a growing concern in recent years. Phytoremediation, a plant based and cost effective technology, may be an effective approach in the cleanup of water contaminated by these metals. In this study, the aquatic macrophyte Eleocharis acicularis was used in laboratory and field experiments to assess its capability to accumulate Sb, As, Cu, and Zn, and thereby investigate its potential application in phytoremediation. The results showed that E. acicularis adapted well to water contaminated by these metals. The removal rates of Sb, As, Cu, and Zn in the laboratory experiment were 3.04, 2.75, 0.417, and 1.49 {mu}g/L/day, respectively. The highest concentrations of these metals accumulated in E. acicularis after 10 days of the laboratory experiment were 6.29, 6.44, 20.5, and 73.5 mg/kg dry weight, respectively. Only 8% of As, 12% of Sb, 87% of Cu and 93% of Zn removed from the water were used by E. acicularis. The highest concentrations of Sb, As, Cu, and Zn accumulated in E. acicularis after 10 wk of the field experiment were 76.0, 22.4, 33.9, and 266 mg/kg dry weight, respectively. The results indicate that E. acicularis has the ability to accumulate Sb, As, Cu, and Zn from contaminated water. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  17. Synthesis, Structural and Antibacterial Studies of New Dithiocarbamate Complexes of Sb (III) And Bi (III)

    International Nuclear Information System (INIS)

    Nur Amirah Jamaluddin; Ibrahim Baba; Nazlina Ibrahim

    2014-01-01

    Six new dithiocarbamate complexes from three different amines, for example N-ethyl ethanol-, N-butylethyl- and N-benzylmethylamine were successfully prepared using in situ method. All complexes were characterized by elemental analysis, IR, UV-Vis, 13 C and 1 H NMR. Elemental analysis data (C, H, N and S) showed an agreement with the general formula of MCl(S 2 CNR ' R '' ) 2 , (M = Sb (III), Bi (III); R ' = ethyl, butyl and benzyl; R '' = ethanol, ethyl and methyl). The complexes had been characterized by infrared spectroscopy that showed a thioureido bands, v(C-N) in the region of 1427 - 1490 cm -1 followed by v(C-S) bands that can be seen in the region of 935 - 1060 cm -1 and v(M-S) bands existed in the region of 350 - 392 cm -1 . Maximum wavelength absorption for ultraviolet-visible spectroscopy for N-C-S group was at 254 nm which indicates π → π * transition. Data from 13 C NMR showed a signal in the region of 198.39 - 199.44 ppm that corresponded to the NCS 2 group. The crystal structure of bis(N,N ' utylethyldithiocarbamato)chloride antimony (III), SbCl (S 2 CN(C 4 H 9 )(C 2 H 5 )) 2 demonstrated a five-coordination geometry, triclinic system, space group P1 with a = 10.0141(8) Armstrong, b = 10.1394(7) Am strong, c = 11.8665(9) Armstrong, α = 67.960(2) degree, β = 87.616(2) degree and γ = 80.172(2) degree. Minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) tests were done using five dithiocarbamate complexes which are Bi Cl[S 2 CN(C 2 H 5 )(C 2 H 4 OH)) 2 , SbCl[S 2 CN(C 2 H 5 )(C 2 H 4 OH)) 2 , Bi Cl(S 2 CN(C 4 H 9 )(C 2 H 5 )) 2 , SbCl(S 2 CN(C 4 H 9 )(C 2 H 5 )) 2 , Bi Cl(S 2 CN(C 7 H 7 )(CH 3 )) 2 towards S. aureus, S. epidermidis, E. aerogenes and E. coli. It was found that all four complexes were active against S. aureus except SbCl(S 2 CN(C 2 H 5 )(C 2 H 4 OH)) 2 while Bi Cl(S 2 CN(C 7 H 7 )(CH 3 )) 2 and Bi Cl(S 2 CN(CH 3 )(C 6 H 11 )) 2 complexes were active against S. epidermidis with MIC value of 5.0 mg/ m

  18. The formation mechanisms and optical characteristics of GaSb quantum rings

    International Nuclear Information System (INIS)

    Lin, Wei-Hsun; Pao, Chun-Wei; Wang, Kai-Wei; Liao, Yu-An; Lin, Shih-Yen

    2013-01-01

    The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures

  19. The filled skutterudite PrOs{sub 4}Sb{sub 12}: superconductivity and correlations; La skutterudite PrOs{sub 4}Sb{sub 12}: supraconductivite et correlations

    Energy Technology Data Exchange (ETDEWEB)

    Measson, M.A

    2005-12-15

    The filled skutterudite PrOs{sub 4}Sb{sub 12} is the first Pr-based heavy fermion superconductor. This thesis addresses several important open questions including the determination of the quasi-particle mass renormalisation, the nature and mechanism of superconductivity, and the intrinsic or extrinsic nature of the double superconducting transition seen in the specific heat. A fit of the specific heat with magnetic interactions between the ions Pr is proposed. We extract from it an electronic term of between 300-750 mJ/K{sup 2}.mol(Pr). Analysis of the specific heat jump provides evidence that heavy carriers are involved in Cooper pairing and that superconductivity is strongly coupled. Extensive characterizations by specific heat, resistivity, susceptibility measurements show that a double transition appears in the best samples. Nevertheless we bring the first serious doubts on the intrinsic nature of the double transition, because we have found samples with a single sharp transition at Tc2 and because the ratio of the two specific heat jumps shows strong dispersion among the samples. Furthermore we have measured the superconducting phase diagrams with an A.C. specific heat technique under magnetic field and under pressure up to 4.2 GPa, and we show that the two transitions, Tc1 and Tc2, exhibit similar behaviours with magnetic field and pressure. We find a strong change in the pressure dependence of Tc's above 2 GPa which might be related to a change in the nature of the superconductivity under pressure (at least partially mediated by fluctuations and only by phonons at respectively low and high pressure) which may be linked to the increase of the crystal field gap of the Pr ions. Analysis of the upper critical field shows the presence of at least two superconducting bands and concludes to a singlet nature of the pairing. A strong distortion of the flux-line lattice, which is constant with temperature and field, is obtained by small angle neutron scattering

  20. Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

    Science.gov (United States)

    Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

    2017-07-01

    We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

  1. InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Dominec, Filip; Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.

    2017-01-01

    Roč. 464, Apr (2017), s. 206-210 ISSN 0022-0248 R&D Projects: GA MŠk LM2015087; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  2. Sb(III) and Sb(V) separation and analytical speciation by a continuous tandem on-line separation device in connection with inductively coupled plasma atomic emission spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Menendez Garcia, A. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Perez Rodriguez, M.C. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Sanchez Uria, J.F. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.; Sanz-Medel, A. [Oviedo Univ. (Spain). Dept. of Phys. and Anal. Chem.

    1995-09-01

    A sensitive, precise and automated non-chromatographic method for Sb(III) and Sb(V) analytical speciation based on a continuous tandem on-line separation device in connection with inductively coupled plasma-atomic emission (ICP-AES) detection is proposed. Two on-line successive separation steps are included into this method: a continuous liquid-liquid extraction of Sb(III) with ammonium pyrrolidine dithiocarbamate (APDC) into methylisobuthylketone (MIBK), followed by direct stibine generation from the organic phase. Both separation steps are carried out in a continuous mode and on-line with the ICP-AES detector. Optimization of experimental conditions for the tandem separation and ICP-AES detection are investigated in detail. Detection limits for Sb(III) were 3 ng.mL{sup -1} and for Sb(V) 8 ng.mL{sup -1}. Precisions observed are in the range {+-} 5%. The proposed methodology has been applied to Sb(III) and Sb(V) speciation in sea-water samples. (orig.)

  3. Spin-lattice relaxation times and knight shift in InSb and InAs

    International Nuclear Information System (INIS)

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  4. Probing the magnetic ground state of single crystalline Ce3TiSb5

    Science.gov (United States)

    Matin, M.; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Manfrinetti, P.

    2017-04-01

    Motivated by the report of superconductivity in R3TiSb5 (R  =  La and Ce) and possibly Nd3TiSb5 at  ∼4 K, we grew single crystals of La3TiSb5 and Ce3TiSb5 by the high-temperature solution method using Sn as a flux. While in both compounds we observed a superconducting transition at 3.7 K for resistivity and low-field magnetization, our data conclusively show that it arose from residual Sn flux present in the single crystals. In particular, the heat capacity data do not present any of the anomalies expected from a bulk superconducting transition. The anisotropic magnetic properties of Ce3TiSb5, crystallizing in a hexagonal P63/mcm structure, were studied in detail. We find that the Ce ions in Ce3TiSb5 form a Kondo lattice and exhibited antiferromagnetic ordering at 5.5 K with a reduced moment and a moderately normalized Sommerfeld coefficient of 598 mJ/mol K2. The characteristic single-ion Kondo energy scale was found to be  ∼8 K. The magnetization data were subjected to a crystal electric field (CEF) analysis. The experimentally observed Schottky peak in the 4f-electron heat capacity of Ce3TiSb5 was reproduced fairly well by the energy levels derived from the CEF analysis.

  5. Point defect balance in epitaxial GaSb

    International Nuclear Information System (INIS)

    Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-01-01

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  6. Three dimensional atom probe imaging of GaAsSb quantum rings

    International Nuclear Information System (INIS)

    Beltran, A.M.; Marquis, E.A.; Taboada, A.G.; Ripalda, J.M.; Garcia, J.M.; Molina, S.I.

    2011-01-01

    Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs x Sb 1-x quantum rings of 20-30 nm in diameter with x∼0.33. -- Highlights: → Atom-probe tomography resolves QR morphology of GaSb self-assembled GaSb buried nanostructures. → From atom-probe tomography compositional distribution has been obtained. → Strong segregation and morphological changes are observed with respect to uncapped QR.

  7. High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

    KAUST Repository

    Dong, Yongkwan

    2014-08-28

    Two series of p-type polycrystalline skutterudites, Ba0.15YbxCo3FeSb12 and YbyCo3FeSb9As3 with varying Yb concentrations, were synthesized by solid-state reaction and then densified by hot pressing. The phase and stoichiometries of the resulting materials were characterized by powder X-ray diffraction and energy dispersive spectroscopy, while their high-temperature transport properties were investigated from 300 to 800 K. The Seebeck coefficients and electrical resistivities increased linearly with increasing temperature for the double-filled specimens. The Seebeck coefficients and electrical resistivities did not change very much for the As-substituted specimens. The thermal conductivity for all specimens decreased with increasing temperature up to 700 K, corresponding to the plateau in the Seebeck coefficient, and then increased again due to bipolar diffusion. We find that double filling is a more feasible approach to thermoelectric property optimization than single filling with As substitution. © 2014 Springer Science+Business Media New York.

  8. Crystal and magnetic study of the disordered perovskites Ca(Mn0.5Sb0.5)O3 and Ca(Fe0.5Sb0.5)O3

    International Nuclear Information System (INIS)

    Retuerto, M.; Martinez-Lope, M.J.; Garcia-Hernandez, M.; Munoz, A.; Fernandez-Diaz, M.T.; Alonso, J.A.

    2010-01-01

    We have investigated the double perovskites Ca 2 MSbO 6 (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M 0.5 Sb 0.5 )O 3 . Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO 6 octahedra of Ca(Mn 0.5 Sb 0.5 )O 3 , in contrast with the ordered double perovskite Sr 2 MnSbO 6 . Ca(Fe 0.5 Sb 0.5 )O 3 behaves as an antiferromagnet with an ordered magnetic moment for Fe 3+ of 1.53(4)μ B and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn 0.5 Sb 0.5 )O 3 cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

  9. Electrochemical properties and lithium ion diffusion in Li4FeSbO6 studied by first principle

    Science.gov (United States)

    Jia, Mingzhen; Wang, Hongyan; Wang, Hui; Chen, Yuanzheng; Guo, Chunsheng; Gan, Liyong

    2017-10-01

    Due to the high capacity, Li-rich materials Li2MO3 (M = transition metal) have attracted considerable attention as the next generation of Li-ion batteries. Li4FeSbO6 is a new Li-rich layered oxide material with antiferromagnet honeycomb structure. In this work, the electrochemical behavior, charging process and oxygen stability of LixFeSbO6 (0 ≤ xextracted, the charge compensation is mainly contributed by the oxygen atoms through analyzing the Bader charges of each element. In addition, oxygen evolution reactions will occur in LixFeSbO6 (x ≤ 1.5), which will decay the capacities during cycling process. Finally, we calculated that the lithium ion can diffuse in a three-dimensional pathway with the activation barriers from 0.36 eV to 0.67 eV.

  10. Solvothermal synthesis of a new 3-D mixed-metal sulfide framework, (H{sub 1.33}tren)[In{sub 2.67}Sb{sub 1.33}S{sub 8}]·tren

    Energy Technology Data Exchange (ETDEWEB)

    Lampkin, John D., E-mail: j.lampkin@pgr.rdg.ac.uk; Powell, Anthony V., E-mail: a.v.powell@rdg.ac.uk; Chippindale, Ann M., E-mail: a.m.chippindale@rdg.ac.uk

    2016-11-15

    A new indium(III) antimony(V) sulfide, (H{sub 1.33}tren)[In{sub 2.67}Sb{sub 1.33}S{sub 8}]·tren, has been prepared solvothermally at 433 K. The compound crystallises in the tetragonal space group I-42d (lattice parameters, a=12.6248(5) and c=19.4387(18) Å at 150 K) and contains adamantane-like T2 supertetrahedral units comprised of corner-sharing InS{sub 4}{sup 5−} and SbS{sub 4}{sup 3−} tetrahedra. The adamantane-like units are then linked through sulfur vertices to generate an open, 3-D framework structure containing large pores in which neutral, protonated tren (tris(2-aminoethylene)amine) molecules reside. The presence of the organic components was confirmed by solid-state {sup 13}C NMR (10 kHz), combustion and thermogravimetric analysis. The band gap, obtained from UV–vis diffuse reflectance measurements, is 2.7(2) eV. Stirring with either water or alkali-metal salt solution leads to removal of the neutral tren molecules and an ~9% reduction in unit-cell volume on formation of (H{sub 1.33}tren)[In{sub 2.67}Sb{sub 1.33}S{sub 8}]·(H{sub 2}O){sub 4}. - Graphical abstract: Linking of In(III)-Sb(V)-S adamantane units to form a 3-D open framework. - Highlights: • Preparation and structural characterisation of a new mixed-metal thiometallate. • The first mixed In(III)/Sb(V) supertetrahedron. • Optical band gap of 2.7(2) eV. • Soaking in aqueous alkali-metal solutions leads to removal of ca. 50% of the organic content.

  11. Synthesis, characterization and photovoltaic properties of Mn-doped Sb2S3 thin film

    Directory of Open Access Journals (Sweden)

    Horoz Sabit

    2018-03-01

    Full Text Available Synthesis and characterization of Mn-doped Sb2S3 thin films (TFs prepared by chemical bath deposition (CBD at room temperature have been documented and their structural, optical, morphological, magnetic and photovoltaic properties have been examined for the first time. Their structural properties reveal that the Mn-doped Sb2S3 TF has an orthorhombic phase structure of Sb2S3, and that the grain size of the Mn-doped Sb2S3 TF (72.9 nm becomes larger than that of undoped Sb2S3 TF (69.3 nm. It has been observed that Mn content causes the Sb2S3 TF band gap to decrease. This situation clearly correlates with band tailing due to the impurities that are involved. The morphological properties have revealed that the shape of the Mn-doped Sb2S3 TF is more uniform than the shape of its undoped counterpart. The study on its magnetic properties has demonstrated that the Mn-doped Sb2S3 TF exhibits paramagnetic behavior. Its paramagnetic Curie-Weiss temperature was found to be -4.1 K. This result suggests that there is an anti-ferromagnetic interaction between Mn moments in the Mn-doped Sb2S3 TF. Incident photon to electron conversion efficiency (IPCE and J-V measurements were also carried out for the Mn-doped Sb2S3 TF for the first time. The results have indicated that the Mn-doped Sb2S3 TF can be utilized as a sensitizer to improve the performance of solar cells. Another important observation on the photovoltaic properties of Mn-doped Sb2S3 TF is that the spectral response range is wider than that of undoped Sb2S3 TF. Our study suggests that the introduction of dopant could serve as an effective means of improving the device performance of solar cells.

  12. Sb2S3:C/CdS p-n junction by laser irradiation

    International Nuclear Information System (INIS)

    Arato, A.; Cardenas, E.; Shaji, S.; O'Brien, J.J.; Liu, J.; Castillo, G. Alan; Das Roy, T.K.; Krishnan, B.

    2009-01-01

    In this paper, we report laser irradiated carbon doping of Sb 2 S 3 thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb 2 S 3 thin films of approximately 0.5 μm in thickness. Sb 2 S 3 thin films were prepared from a solution containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb 2 S 3 thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb 2 S 3 :C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb 2 S 3 :C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl 2 , sodium citrate, NH 4 OH and thiourea at 70 deg. C . On the CdS film, Sb 2 S 3 /C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb 2 S 3 side facing the beam. The p-n junction formed by p-Sb 2 S 3 :C and n-type CdS showed V oc = 500 mV and J sc = 0.5 mA/cm 2 under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing

  13. Device design of GaSb/CdS thin film thermal photovoltaic solar cells%基于GaSb/CdS薄膜热光伏电池的器件设计∗

    Institute of Scientific and Technical Information of China (English)

    吴限量; 张德贤; 蔡宏琨; 周严; 倪牮; 张建军

    2015-01-01

    基于GaSb薄膜热光伏器件是降低热光伏系统成本的有效途径之一,本文主要针对GaSb/CdS薄膜热光伏器件结构进行理论分析.采用AFORS-HET软件进行模拟仿真,分析GaSb和CdS两种材料各自的缺陷态密度、界面态对电池性能的影响.根据软件模拟可以得知,吸收层GaSb的缺陷态密度以及GaSb与CdS之间的界面态密度是影响电池性能的重要因素.当GaSb缺陷态增加时,主要影响电池的填充因子,电池效率明显下降.而作为窗口层的CdS缺陷态密度对电池性能影响不明显,当CdS缺陷态密度上升4个数量级时,电池效率仅下降0.11%.%Enthusiasm in the research of thermo-photovoltaic (TPV) cells has been aroused because the low bandwidth semi-conductors of III-V family are coming into use. GaSb, as a member of III-V family, has many merits such as high absorption coeffcient, and low band gap of 0.725 eV at 300 K etc.. At present thermo-photovoltaic cells are usually based on GaSb wafer, and it can be manufactured by the vertical Bridgeman method. Thermo-photovoltaic cell based on GaSb films is one of the effective ways to reduce the cost of the thermo-photovoltaic system. GaSb polycrystalline films can be grown by physical vapor deposition (PVD) which has advantages in using fewer materials and energy, and also in doing little harm to the environment. Because of residual acceptor defects VGaGaSb, GaSb thin film is usually of p-type semiconductor. So we should find n-type semiconductor material to form pn junction. We choose CdS as the emission layer of a cell structure. CdS belongs to n-type semiconductor with a narrow band gap of 2.4 eV and high light transmissivity. CdS thin film grown by chemical bath deposition (CBD) has passivation properties for GaSb. CdS layers can remove native oxides from GaSb surface and reduce the surface recombination velocity of GaSb. This paper focuses on theoretical analysis of GaSb/CdS thin film photovoltaic

  14. Comparisons of TRAC-PF-1 calculations with semiscale Mod-3 small-break tests S-SB-P1 and S-SB-P7

    International Nuclear Information System (INIS)

    Sahota, M.S.

    1982-01-01

    Semiscale Tests S-SB-P1 and S-SB-P7 conducted in the Semiscale Mod-3 facility at the Idaho National Engineering Laboratory are analyzed using the latest released version of the Transient Reactor Analysis Code (TRAC-PF1). The results are used to assess TRAC-PF1 predictions of thermal-hydraulic phenomena and the effects of break size and pump operation on system response during slow transients. Tests S-SB-P1 and S-SB-P7 simulated an equivalent pressurized-water-reactor (PWR) 2.5% communicative cold-leg break for early and late pump trips, respectively, with only high-pressure injection (HPI) into the cold legs. The parameters examined include break flow, primary-system pressure response, primary-system mass distribution, and core characteristics

  15. Oyonite, Ag3Mn2Pb4Sb7As4S24, a New Member of the Lillianite Homologous Series from the Uchucchacua Base-Metal Deposit, Oyon District, Peru

    Directory of Open Access Journals (Sweden)

    Luca Bindi

    2018-05-01

    Full Text Available The new mineral species oyonite, ideally Ag3Mn2Pb4Sb7As4S24, has been discovered in the Uchucchacua base-metal deposit, Oyon district, Catajambo, Lima Department, Peru, as very rare black metallic subhedral to anhedral crystals, up to 100 μm in length, associated with orpiment, tennantite/tetrahedrite, menchettiite, and other unnamed minerals of the system Pb-Ag-Sb-Mn-As-S, in calcite matrix. Its Vickers hardness (VHN100 is 137 kg/mm2 (range 132–147. In reflected light, oyonite is weakly to moderately bireflectant and weakly pleochroic from dark grey to a dark green. Internal reflections are absent. Reflectance values for the four COM wavelengths [Rmin, Rmax (% (λ in nm] are: 33.9, 40.2 (471.1; 32.5, 38.9 (548.3, 31.6, 38.0 (586.6; and 29.8, 36.5 (652.3. Electron microprobe analysis gave (in wt %, average of 5 spot analyses: Cu 0.76 (2, Ag 8.39 (10, Mn 3.02 (7, Pb 24.70 (25, As 9.54 (12, Sb 28.87 (21, S 24.30 (18, total 99.58 (23. Based on 20 cations per formula unit, the chemical formula of oyonite is Cu0.38Ag2.48Mn1.75Pb3.79Sb7.55As4.05S24.12. The main diffraction lines are (d in Å, hkl and relative intensity: 3.34 (−312; 40, 3.29 (−520; 100, 2.920 (−132; 40, 2.821 (−232; 70, 2.045 (004; 50. The crystal structure study revealed oyonite to be monoclinic, space group P21/n, with unit-cell parameters a = 19.1806 (18, b = 12.7755 (14, c = 8.1789 (10 Å, β = 90.471 (11°, V = 2004.1 (4 Å3, Z = 2. The crystal structure was refined to a final R1 = 0.032 for 6272 independent reflections. Oyonite belongs to the Sb-rich members of the andorite homeotypic sub-series within the lillianite homologous series. The name oyonite is after the Oyon district, Lima Department, Peru, the district where the type locality (Uchucchacua mine is located.

  16. Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory.

    Science.gov (United States)

    Xia, Mengjiao; Zhu, Min; Wang, Yuchan; Song, Zhitang; Rao, Feng; Wu, Liangcai; Cheng, Yan; Song, Sannian

    2015-04-15

    Phase-change memory (PCM) has great potential for numerous attractive applications on the premise of its high-device performances, which still need to be improved by employing a material with good overall phase-change properties. In respect to fast speed and high endurance, the Ti-Sb-Te alloy seems to be a promising candidate. Here, Ti-doped Sb2Te3 (TST) materials with different Ti concentrations have been systematically studied with the goal of finding the most suitable composition for PCM applications. The thermal stability of TST is improved dramatically with increasing Ti content. The small density change of T0.32Sb2Te3 (2.24%), further reduced to 1.37% for T0.56Sb2Te3, would greatly avoid the voids generated at phase-change layer/electrode interface in a PCM device. Meanwhile, the exponentially diminished grain size (from ∼200 nm to ∼12 nm), resulting from doping more and more Ti, enhances the adhesion between phase-change film and substrate. Tests of TST-based PCM cells have demonstrated a fast switching rate of ∼10 ns. Furthermore, because of the lower thermal conductivities of TST materials, compared with Sb2Te3-based PCM cells, T0.32Sb2Te3-based ones exhibit lower required pulse voltages for Reset operation, which largely decreases by ∼50% for T0.43Sb2Te3-based ones. Nevertheless, the operation voltages for T0.56Sb2Te3-based cells dramatically increase, which may be due to the phase separation after doping excessive Ti. Finally, considering the decreased resistance ratio, TixSb2Te3 alloy with x around 0.43 is proved to be a highly promising candidate for fast and long-life PCM applications.

  17. Self-organized formation of GaSb/GaAs quantum rings.

    Science.gov (United States)

    Timm, R; Eisele, H; Lenz, A; Ivanova, L; Balakrishnan, G; Huffaker, D L; Dähne, M

    2008-12-19

    Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.

  18. Crystal structure and high temperature transport properties of Yb-filled p-type skutterudites YbxCo2.5Fe1.5Sb12

    KAUST Repository

    Dong, Yongkwan

    2014-01-01

    Partially Yb-filled Fe substituted polycrystalline p-type skutterudites with nominal compositions YbxCo2.5Fe1.5Sb 12, with varying filler concentrations x, were synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot-pressing. The compositions and filling fractions were confirmed with a combination of Rietveld refinement and elemental analysis. Their thermoelectric properties were evaluated from 300 to 800 K. The Seebeck coefficients for the specimens increase with increasing temperature and plateau at around 750 K. The thermal conductivity decreases with increasing Yb filling fraction, and bipolar conduction becomes evident and increases at elevated temperatures. A maximum ZT value of 0.8 was obtained at 750 K for Yb 0.47Co2.6Fe1.4Sb12. The thermoelectric properties and potential for further optimization are discussed in light of our results. © 2013 Elsevier Inc.

  19. Quaternary InGaAsSb Thermophotovoltaic Diodes

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-01-01

    In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

  20. Effect of Sb Segregation on Conductance and Catalytic Activity at Pt/Sb-Doped SnO2 Interface: A Synergetic Computational and Experimental Study

    DEFF Research Database (Denmark)

    Hu, Qiang; Colmenares Rausseo, Luis César; Martinez, Umberto

    2015-01-01

    a combined computational and experimental study. It was found that Sb-dopant atoms prefer to segregate toward the ATO/Pt interface. The deposited Pt catalysts, interestingly, not only promote Sb segregation, but also suppress the occurrence of Sb3+ species, a charge carrier neutralizer at the interface...... to support future applications of ATO/Pt-based materials as possible cathodes for PEMFC applications with enhanced durability under practical applications....

  1. Synthesis, Characterization, and Catalytic Performance of Sb2Se3 Nanorods

    Directory of Open Access Journals (Sweden)

    Ning Hu

    2017-01-01

    Full Text Available Antimony selenide has many potential applications in thermoelectric, photovoltaic, and phase-change memory devices. A novel method is described for the rapid and scalable preparation of antimony selenide (Sb2Se3 nanorods in the presence of hydrazine hydrate and/or permanganate at 40°C. Crystalline nanorods are obtained by the addition of hydrazine hydrate in a reaction mixture of antimony acetate and/or chloride and sodium selenite in neutral and basic media, while amorphous nanoparticles are formed by the addition of KMnO4 in a reaction mixture of antimony acetate/chloride and sodium selenite. The powder X-ray diffraction pattern confirms orthorhombic phase crystalline Sb2Se3 for the first and second reactions with lattice parameters a=1.120 nm, b=1.128 nm, and c=0.383 nm and amorphous Sb2Se3 for the third reaction. Scanning electron microscopy (SEM, transmission electron microscopy (TEM, and high-resolution TEM (HRTEM images show the diameter of nanorods for the first and second reactions to be in the order of 100 nm to 150 nm and about 20 nm particles for the third reaction. EDX and XPS suggest that the nanorods are pure Sb2Se3. The UV-vis analysis indicates a band gap of 4.14 and 4.97 eV for the crystalline and amorphous Sb2Se3, respectively, corresponding to a blue shift. The photocatalytic study shows that the decolorization of Rhodamine in solution by nanoparticles is slightly greater than nanorods.

  2. Analysis of the FIST integral tests 4DBA1, 6SB2C and T1QUV with TRAC-BFl/v2001.2

    International Nuclear Information System (INIS)

    Analytis, G.Th.

    2004-01-01

    As part of the assessment of the frozen version of the PSU TRAC-BFl/v2001.2 and its qualification as a LB-LOCA and SB-LOCA code, in this work, we shall outline the comparisons between measurements and code predictions for three FIST tests: The LB-LOCA test 4DBA1, the SB-LOCA test 6SB2C and the failure to maintain water level test T1QUV. We shall study the effect of the number of axial levels in the active core as well as (in the case of the SB-LOCA test 6SB2C) the effect of the timing of the activation of the reflooding options/heat transfer package on the code predictions. Furthermore, we shall show that by using the upwinding option of some terms of the three-dimensional momentum equations, severe mass-error problems appearing in the analysis of the test T1QUV can be resolved. Generally, we shall show that although there are some differences between measurements and predictions, TRAC-BF1 captures quite well the overall behaviour of the LB-LOCA transient (depending on the number of axial nodes in the core) but underpredicts the rod surface temperatures of the SB-LOCA test 6SB2C

  3. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  4. High pressure monoclinic phases of Sb{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Souza, S.M.; Poffo, C.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

    2012-09-15

    The effect of pressure on nanostructured rhombohedral {alpha}-Sb{sub 2}Te{sub 3} (phase I) was investigated using X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 19.2 and 25.5 GPa, respectively. XRD patterns showed two new high pressure phases (named phases II and III). From a Rietveld refinement of XRD patterns of {alpha}-Sb{sub 2}Te{sub 3}, the unit cell volume as a function of pressure was obtained and the values were fitted to a Birch-Murnaghan equation of state (BM-EOS). The best fit was obtained for bulk modulus B{sub 0}=36.1{+-}0.9 GPa and its derivative B{sub 0}{sup Prime }=6.2{+-}0.4 (not fixed). Using the refined structural data for {alpha}-Sb{sub 2}Te{sub 3}, for pressures up to 9.8 GPa, changes in the angle of succession [Te-Sb-Te-Sb-Te], in the interaromic distances of Sb and Te atoms belonging to this angle of succession and in the interatomic distances of atoms located on the c axis were examined. This analysis revealed an electronic topological transition (ETT) along the a and c axes at close to 3.7 GPa. From the RS spectra, the full widths at half maximum (FWHM) of the Raman active modes of {alpha}-Sb{sub 2}Te{sub 3} were plotted as functions of pressure and showed an ETT along the a and c axes at close to 3.2 GPa. The XRD patterns of phases II and III were well reproduced assuming {beta}-Bi{sub 2}Te{sub 3} and {gamma}-Bi{sub 2}Te{sub 3} structures similar to those reported in the literature for {alpha}-Bi{sub 2}Te{sub 3}.

  5. Sulfuric Acid Corrosion of Low Sb - Pb Battery Alloys | Ntukogu ...

    African Journals Online (AJOL)

    The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and As grain refiners were found to have higher corrosion rates than the ...

  6. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-08-01

    Thin films of Cu2Sb, prepared on stainless steel and copper substrates with a pulsed laser deposition technique at room temperature, have been evaluated as electrodes in lithium cells. The electrodes operate by a lithium insertion/copper extrusion reaction mechanism, the reversibility of which is superior when copper substrates are used, particularly when electrochemical cycling is restricted to the voltage range 0.65-1.4 V vs. Li/Li+. The superior performance of Cu2Sb films on copper is attributed to the more active participation of the extruded copper in the functioning of the electrode. The continual and extensive extrusion of copper on cycling the cells leads to the isolation of Li3Sb particles and a consequent formation of Sb. Improved cycling stability of both types of electrodes was obtained when cells were cycled between 0.65 and 1.4 V. A low-capacity lithium-ion cell with Cu2Sb and LiNi0.8Co0.15Al0.05O2 electrodes, laminated from powders, shows excellent cycling stability over the voltage range 3.15 - 2.2 V, the potential difference corresponding to approximately 0.65-1.4 V for the Cu2Sb electrode vs. Li/Li+. Chemical self-discharge of lithiated Cu2Sb electrodes by reaction with the electrolyte was severe when cells were allowed to relax on open circuit after reaching a lower voltage limit of 0.1 V. The solid electrolyte interphase (SEI) layer formed on Cu2Sb electrodes after cells had been cycled between 1.4 and 0.65 V vs. Li/Li+ was characterized by Fourier-transform infrared spectroscopy; the SEI layer contributes to the large irreversible capacity loss on the initial cycle of these cells. The data contribute to a better understanding of the electrochemical behavior of intermetallic electrodes in rechargeable lithium batteries.

  7. Improved electrochemical performance of natural honeycomb templated LiSbO3 as an anode in lithium-ion battery

    International Nuclear Information System (INIS)

    Kundu, M.; Mahanty, S.; Basu, R.N.

    2011-01-01

    Highlights: → LiSbO 3 powders are synthesized by using honeycomb from natural beehive as template. → Agglomeration-free morphology with discrete cubic shaped 40-80 nm particles. → Electrochemically active anode in lithium-ion coin cells. → Improved capacity retention and rate performance in templated LiSbO 3 . - Abstract: LiSbO 3 has been synthesized by wet-chemical route using natural honeycomb as template, followed by thermal treatment at 850 deg. C. X-ray powder diffraction (XRD) confirms a single phase material having an orthorhombic crystal structure with lattice parameters of a = 4.912 A, b = 8.679 A and c = 5.089 A. Field emission scanning electron microscopy (FESEM) revealed that while conventional LiSbO 3 synthesized without using any template (C-LiSbO 3 ) consists of softly agglomerated clusters of bar-shaped multifaceted micrometer-sized grains (0.5-4.0 μm long and 0.5-1.0 μm wide), templated LiSbO 3 (T-LiSbO 3 ) consists of an agglomeration-free morphology with discrete cubic shaped particles of sizes 40-80 nm. Electrochemical investigation in 2032 type coin cells vs Li/Li + shows that Li insertion in LiSbO 3 takes place at 0.78 V while Li extraction occurs in two stages at 1.1 and 1.4 V with initial capacities of 178 and 196 mAh g -1 for C-LiSbO 3 and T-LiSbO 3 respectively. While C-LiSbO 3 shows a drastic capacity fading retaining only 28% of initial capacity after 100 cycles, T-LiSbO 3 retains ∼48% of the initial capacity due to the faceted morphology of the nanoparticles.

  8. The system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb2Ln composition

    International Nuclear Information System (INIS)

    Badalova, M.A.; Chamanova, M.; Dodkhoev, E.S.; Badalov, A.; Abdusalyamova, M.N.

    2015-01-01

    Present article is devoted to system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb 2 Ln composition. The melting enthalpy was estimated. The temperature value was determined.

  9. Synthesis and thermoelectric performance of a p-type Bi0.4Sb1.6Te3 material developed via mechanical alloying

    International Nuclear Information System (INIS)

    Jimenez, Sandra; Perez, Jose G.; Tritt, Terry M.; Zhu, Song; Sosa-Sanchez, Jose L.; Martinez-Juarez, Javier; López, Osvaldo

    2014-01-01

    Highlights: • This paper shows a Bi 1.6 Sb 0.4 Te 3 alloy prepared by MA-SPS process. • A ZT value of about 1.2–1.3 around 360 K was achieved for this compound. • The lower sintering process was carried out in a short time. • The resulting material has a very fine microstructure and high density. - Abstract: A p-type Bi 0.4 Sb 1.6 Te 3 thermoelectric compound was fabricated via mechanical alloying of bismuth, antimony and tellurium elemental powders as starting materials. The mechanically alloyed compositions were sintered through a spark-plasma sintering (SPS) process. The effect of the milling time was investigated. In order to characterize the powders obtained via mechanical alloying, X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis were used. The morphological evolution was studied by scanning electron microscopy (SEM). Results showed that the p-type Bi 0.4 Sb 1.6 Te 3 compound was formed after 2 h of milling. Further, the variation of milling time showed that the synthesized phase was stable. All the powders exhibit the same morphology albeit with slight differences. Measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity were performed in the temperature range 300–520 K for the SPS samples. The resulting thermoelectric figure of merit ZT reaches a maximum of 1.2 at 360 K for the p-type bulk material with a 5 h milling time. This study demonstrates the possibility of preparing thermoelectric materials of high performance and short processing time

  10. Effect of Sb on physical properties and microstructures of laser nano/amorphous-composite film

    International Nuclear Information System (INIS)

    Li, Jia-Ning; Gong, Shui-Li; Sun, Mei; Shan, Fei-Hu; Wang, Xi-Chang; Jiang, Shuai

    2013-01-01

    A nano/amorphous-composite film was fabricated by laser cladding (LC) of the Co–Ti–B 4 C–Sb mixed powders on a TA15 alloy. Such film mainly consisted of Ti–Al, Co–Ti, Co–Sb intermetallics, TiC, TiB 2 , TiB, and the amorphous phases. Experimental results indicated that the crystal systems of TiB 2 (hexagonal)/TiC (cubic) and Sb (rhombohedral) played important role on the formation of such film. Due to the mismatch of these crystals systems and mutual immiscibility of the metallic components, Sb was not incorporated in TiB 2 /TiC, but formed separate nuclei during the film growth. Thus, the growth of TiB 2 /TiC was stopped by the Sb nucleus in such LC molten pool, so as to form the nanoscale particles

  11. Effect of Sb on physical properties and microstructures of laser nano/amorphous-composite film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jia-Ning, E-mail: jn2369@163.com [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Aviation Industry Corporation of China, Beijing Institute of Aeronautical Materials, Beijing 100095 (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Gong, Shui-Li, E-mail: gongshuili@sina.com [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Sun, Mei; Shan, Fei-Hu; Wang, Xi-Chang [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Jiang, Shuai [Science and Technology on Power Beam Processes Laboratory, Beijing (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Department of Materials Science and Engineering, China University of Petroleum, Qingdao 266580 (China)

    2013-11-01

    A nano/amorphous-composite film was fabricated by laser cladding (LC) of the Co–Ti–B{sub 4}C–Sb mixed powders on a TA15 alloy. Such film mainly consisted of Ti–Al, Co–Ti, Co–Sb intermetallics, TiC, TiB{sub 2}, TiB, and the amorphous phases. Experimental results indicated that the crystal systems of TiB{sub 2} (hexagonal)/TiC (cubic) and Sb (rhombohedral) played important role on the formation of such film. Due to the mismatch of these crystals systems and mutual immiscibility of the metallic components, Sb was not incorporated in TiB{sub 2}/TiC, but formed separate nuclei during the film growth. Thus, the growth of TiB{sub 2}/TiC was stopped by the Sb nucleus in such LC molten pool, so as to form the nanoscale particles.

  12. Bonding in ZnSb

    DEFF Research Database (Denmark)

    Bjerg, Lasse; Madsen, Georg K. H.; Iversen, Bo Brummerstedt

    Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details of the lo......Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details...... of the lowest conduction band have therefore been investigated. Electrons placed in the lowest conduction band are predicted to increase the bonding between second nearest neighbour atoms. This causes a lowering of the energy at special points in the first Brillouin zone. Thereby, the dispersion of the lowest...

  13. New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

    International Nuclear Information System (INIS)

    Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

    1993-01-01

    New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

  14. Epitaxial Growth and Electronic Structure of Half Heuslers Co1-xNixTiSb (001), Ni1-xCoxTiSn, and PtLuSb

    Science.gov (United States)

    2016-01-09

    lineup of CoTiSb with conventional III/V’s, the valence-band discontinuities in abrupt CoTiSb/InGaAs(001) and CoTiSb/InAlAs(001) heterojunctions were...confirm identification of a topological surface state: first, the state must be confined and show no out-of-plane dispersion; second, the state

  15. Yolk-shell structured Sb@C anodes for high energy Na-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Song, Junhua; Yan, Pengfei; Luo, Langli; Qi, Xingguo; Rong, Xiaohui; Zheng, Jianming; Xiao, Biwei; Feng, Shuo; Wang, Chongmin; Hu, Yong-Sheng; Lin, Yuehe; Sprenkle, Vincent L.; Li, Xiaolin

    2017-10-01

    Despite great advances in sodium-ion battery developments, the search for high energy and stable anode materials remains a challenge. Alloy or conversion-typed anode materials are attractive candidates of high specific capacity and low voltage potential, yet their applications are hampered by the large volume expansion and hence poor electrochemical reversibility and fast capacity fade. Here, we use antimony (Sb) as an example to demonstrate the use of yolk-shell structured anodes for high energy Na-ion batteries. The Sb@C yolk-shell structure prepared by controlled reduction and selective removal of Sb2O3 from carbon coated Sb2O3 nanoparticles can accommodate the Sb swelling upon sodiation and improve the structural/electrical integrity against pulverization. It delivers a high specific capacity of ~554 mAh•g-1, good rate capability (315 mhA•g-1 at 10C rate) and long cyclability (92% capacity retention over 200 cycles). Full-cells of O3-Na0.9[Cu0.22Fe0.30Mn0.48]O2 cathodes and Sb@C-hard carbon composite anodes demonstrate a high specific energy of ~130 Wh•kg-1 (based on the total mass of cathode and anode) in the voltage range of 2.0-4.0 V, ~1.5 times energy of full-cells with similar design using hard carbon anodes.

  16. Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dias, Marcelino; Costa, Thiago [Department of Manufacturing and Materials Engineering, University of Campinas — UNICAMP, 13083-860 Campinas, SP (Brazil); Rocha, Otávio [Federal Institute of Education, Science and Technology of Pará — IFPA, 66093-020 Belém, PA (Brazil); Spinelli, José E. [Department of Materials Engineering, Federal University of São Carlos — UFSCar, 13565-905 São Carlos, SP (Brazil); Cheung, Noé, E-mail: cheung@fem.unicamp.br [Department of Manufacturing and Materials Engineering, University of Campinas — UNICAMP, 13083-860 Campinas, SP (Brazil); Garcia, Amauri [Department of Manufacturing and Materials Engineering, University of Campinas — UNICAMP, 13083-860 Campinas, SP (Brazil)

    2015-08-15

    Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure and mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.

  17. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum well

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Ivanov, E.V.; Danilov, L.V.; Petukhov, A.A.; Kalinina, K.V.; Slobozhanyuk, S.I.; Zegrya, G.G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Zíková, Markéta; Hulicius, Eduard

    2014-01-01

    Roč. 115, č. 22 (2014), "223102-1"-"223102-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S Institutional support: RVO:68378271 Keywords : MOVPE * GaSb * InAs * electroluminescence * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  18. Fluoride ion donor properties of cis-OsO(2)F(4): synthesis, raman spectroscopic study, and X-ray crystal structure of [OsO(2)F(3)][Sb(2)F(11)].

    Science.gov (United States)

    Hughes, Michael J; Mercier, Hélène P A; Schrobilgen, Gary J

    2010-01-04

    The salt, [OsO(2)F(3)][Sb(2)F(11)], has been synthesized by dissolution of cis-OsO(2)F(4) in liquid SbF(5), followed by removal of excess SbF(5) at 0 degrees C to yield orange, crystalline [OsO(2)F(3)][Sb(2)F(11)]. The X-ray crystal structure (-173 degrees C) consists of an OsO(2)F(3)(+) cation fluorine bridged to an Sb(2)F(11)(-) anion. The light atoms of OsO(2)F(3)(+) and the bridging fluorine atom form a distorted octahedron around osmium in which the osmium atom is displaced from its center toward an oxygen atom and away from the trans-fluorine bridge atom. As in other transition metal dioxofluorides, the oxygen ligands are cis to one another and the fluorine bridge atom is trans to an oxygen ligand and cis to the remaining oxygen ligand. The Raman spectrum (-150 degrees C) of solid [OsO(2)F(3)][Sb(2)F(11)] was assigned on the basis of the ion pair observed in the low-temperature crystal structure. Under dynamic vacuum, [OsO(2)F(3)][Sb(2)F(11)] loses SbF(5), yielding the known [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)] salt with no evidence for [OsO(2)F(3)][SbF(6)] formation. Attempts to synthesize [OsO(2)F(3)][SbF(6)] by the reaction of [OsO(2)F(3)][Sb(2)F(11)] with an equimolar amount of cis-OsO(2)F(4) or by a 1:1 stoichiometric reaction of cis-OsO(2)F(4) with SbF(5) in anhydrous HF yielded only [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)]. Quantum-chemical calculations at the SVWN and B3LYP levels of theory and natural bond orbital analyses were used to calculate the gas-phase geometries, vibrational frequencies, natural population analysis charges, bond orders, and valencies of OsO(2)F(3)(+), [OsO(2)F(3)][Sb(2)F(11)], [OsO(2)F(3)][SbF(6)], and Sb(2)F(11)(-). The relative thermochemical stabilities of [OsO(2)F(3)][SbF(6)], [OsO(2)F(3)][Sb(2)F(11)], [OsO(2)F(3)][AsF(6)], [mu-F(OsO(2)F(3))(2)][SbF(6)], [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)], and [mu-F(OsO(2)F(3))(2)][AsF(6)] were assessed using the appropriate Born-Haber cycles to account for the preference for [mu-F(OsO(2)F(3

  19. Laser irradiation and thermal treatment inducing selective crystallization in Sb2O3-Sb2S3 glassy films

    Science.gov (United States)

    Avila, L. F.; Pradel, A.; Ribeiro, S. J. L.; Messaddeq, Y.; Nalin, M.

    2015-02-01

    The influence of both thermal treatment and laser irradiation on the structural and optical properties of films in the Sb2O3-Sb2S3 system was investigated. The films were prepared by RF-sputtering using glass compositions as raw materials. Irreversible photodarkening effect was observed after exposure the films to a 458 nm solid state laser. It is shown, for the first time, the use of holographic technique to measure "in situ", simultaneously and independently, the phase and amplitude modulations in glassy films. The films were also photo-crystallized and analysed "in situ" using a laser coupled to a micro-Raman equipment. Results showed that Sb2S3 crystalline phase was obtained after irradiation. The effect of thermal annealing on the structure of the films was carried out. Different from the result obtained by irradiation, thermal annealing induces the crystallization of the Sb2O3 phase. Photo and thermal induced effects on films were studied using UV-Vis and Raman spectroscopy, atomic force microscopy (AFM), thermal analysis (DSC), X-ray diffraction, scanning electron microscopy (MEV) and energy-dispersive X-ray spectroscopy (EDX).

  20. Structural, elastic and magnetic properties of Mn and Sb doped chromium nitride – An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Ikram Un Nabi Lone; Sheik Sirajuddeen M Mohamed, E-mail: msheiksiraj@bsauniv.ac.in; Shameem Banu, I.B.; Sathik Basha, S.

    2017-05-01

    Structural, magnetic and elastic properties of Mn and Sb doped CrN were investigated by the electronic band structure calculations using Full Potential Linear Augmented Plane Wave (FP-LAPW) method. The host compound CrN was doped with Mn and Sb separately, in the doping concentration of 12.5% to replace Cr atoms. The introduction of Mn and Sb atoms replacing the Cr atoms does not change the structural stability of the compound. The changes in magnetic and elastic properties were investigated and compared in GGA and GGA+U methods. The doped CrN undergoes a relative increase in the magnetic order with the substitution of Mn and Sb atoms. In GGA method, the magnetic moments are found to be greater in Mn doped CrN than that found in Sb doped Cr{sub 0.875}NSb{sub 0.125}. When doped with Sb, the elastic moduli such as Young’s modulus, bulk modulus and rigidity modulus show a relative increase in comparison with that in Mn doped CrN. Using Hubbard model in GGA+U method, both the magnetic and elastic properties increase in Mn and Sb doped compounds. - Highlights: • Mn and Sb doped Chromium Nitride. • Structural properties. • Magnetic properties. • Elastic properties.

  1. Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

    2011-02-03

    Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

  2. Minority-carrier transport in InGaAsSb thermophotovoltaic diodes

    International Nuclear Information System (INIS)

    Charache, G.; Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Connolly, J.C.

    1997-05-01

    Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 microm) bandgaps exhibit external quantum efficiencies of 59% at 2 microm. The devices have electron diffusion lengths as long as 29 microm in 8-microm-wide p-InGaAsSb layers and hole diffusion lengths of 3 microm in 6-microm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths. At 632.8 nm the internal quantum efficiencies of diodes with 1- to 8-microm-wide p-layers are above 89% and are independent of the p-layer width, indicating long electron diffusion lengths. InGaAsSb has, therefore, excellent minority carrier transport properties that are well suited to efficient TPV diode operation. The structures were grown by molecular-beam epitaxy

  3. AEMnSb2 (AE=Sr, Ba): a new class of Dirac materials

    International Nuclear Information System (INIS)

    Farhan, M Arshad; Lee, Geunsik; Shim, Ji Hoon

    2014-01-01

    The Dirac fermions of Sb square net in AEMnSb 2 (AE=Sr, Ba) are investigated by using first-principles calculation. BaMnSb 2 contains Sb square net layers with a coincident stacking of Ba atoms, exhibiting Dirac fermion behavior. On the other hand, SrMnSb 2 has a staggered stacking of Sr atoms with distorted zig-zag chains of Sb atoms. Application of hydrostatic pressure on the latter induces a structural change from a staggered to a coincident arrangement of AE ions accompanying a transition from insulator to a metal containing Dirac fermions. The structural investigations show that the stacking type of cation and orthorhombic distortion of Sb layers are the main factors to decide the crystal symmetry of the material. We propose that the Dirac fermions can be obtained by controlling the size of cation and the volume of AEMnSb 2 compounds. (fast track communication)

  4. On possibility of superconductivity in SnSb: A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta D. [Department of Physics, M. K. Bhavnagar University, Bhavnagar 364001 (India); Shrivastava, Deepika [Department of Physics, Barkatullah University, Bhopal 462026 (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara 390002 (India); Sanyal, Sankar P. [Department of Physics, Barkatullah University, Bhopal 462026 (India)

    2016-09-15

    Highlights: • Superconducting property of SnSb is predicted by ab-initio calculations. • Electronic properties of SnSb in RS phase shows metallic behaviour similar to SnAs. • Phonon dispersion confirms the dynamical stability of SnSb in RS phase. • Superconducting transition temperature is 3.1 K, slightly lower than that of SnAs. • Calculated thermodynamic properties are also reported. - Abstract: The electronic, phonon structure and superconducting properties of tin antimonide (SnSb) in rock-salt (RS) structure are calculated using first-principles density functional theory. The electronic band structure and density of states show metallic behavior. The phonon frequencies are positive throughout the Brillouin zone in rock-salt structure indicating its stability in that phase. Superconductivity of SnSb in RS phase is discussed in detail by calculating phonon linewidths, Eliashberg spectral function, electron-phonon coupling constant and superconducting transition temperature. SnSb is found to have a slightly lower T{sub C} (3.1 K), as compared to SnAs.

  5. Liquid epitaxy of Gasub(1-x)Alsub(x)Sb varizone structures

    International Nuclear Information System (INIS)

    Dedegkaev, T.T.; Kryukov, I.I.; Lidejkis, T.P.; Tsarenkov, B.V.; Yakovlev, Yu.P.

    1980-01-01

    To produce Gasub (1-x)Alsub(x)Sb varizon structures with preset limits for the change of the width of Eg forbidden zone and preset Eg gradient value and sign, epitaxy growth from the liquid phase of solid solutions of GaSb-AlSb system was investigated. The epitaxy was realized in two ways: by cooling the saturated solution of Ga-Al-Sb melt and using the isometric contineous mixing of two solution-melts with different Al content. As a result it was ascertained that: 1 the epitaxy by cooling a solution-melt permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures only with small Eg gradients (<=30eV/cm); 2 the epitaxy by contineously mixing the solution-melts permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures with increasing and decreasing Eg in the direction of layer growth in the whole interval of compositions. Eg gradient can be as great as thousands of eV/cm

  6. Low-level simultaneous determination of As and Sb in standard reference materials using radiochemical neutron activation analysis with isotopic 77As and 125Sb tracers

    International Nuclear Information System (INIS)

    Byrne, A.R.

    1987-01-01

    The aim of the present work was to develop an older method used in our laboratory based on selective solvent extraction of As and Sb as their iodides with toluene, and by the use of the radioisotopic tracers 77 As and 125 Sb, to improve the accuracy by better control of the radiochemical yields. 77 As was produced for each sample run by concurrent irradiation of a few mg of GeO 2 followed by a rapid separation of 77 As from 77 Ge. The radiochemically purified sample fraction containing 76+77 As and 122+125 Sb was counted on a Ge detector in good geometry. The γ-lines of the four nuclides do not mutually interfere so that a combined measurement of As and Sb may be made. The method was applied to IAEA Milk Powder A-11, Animal Muscle H-4, Bowen's Kale and some other SRMs. The results obtained are discussed in the light of literature measurements. From present and previous results, together with data by Heydorn, the presently accepted value for As in Bowen's Kale of 140 ngxg -1 may be 20% too high. (orig.)

  7. The filled skutterudite PrOs4Sb12: superconductivity and correlations

    International Nuclear Information System (INIS)

    Measson, M.A.

    2005-12-01

    The filled skutterudite PrOs 4 Sb 12 is the first Pr-based heavy fermion superconductor. This thesis addresses several important open questions including the determination of the quasi-particle mass renormalisation, the nature and mechanism of superconductivity, and the intrinsic or extrinsic nature of the double superconducting transition seen in the specific heat. A fit of the specific heat with magnetic interactions between the ions Pr is proposed. We extract from it an electronic term of between 300-750 mJ/K 2 .mol(Pr). Analysis of the specific heat jump provides evidence that heavy carriers are involved in Cooper pairing and that superconductivity is strongly coupled. Extensive characterizations by specific heat, resistivity, susceptibility measurements show that a double transition appears in the best samples. Nevertheless we bring the first serious doubts on the intrinsic nature of the double transition, because we have found samples with a single sharp transition at Tc2 and because the ratio of the two specific heat jumps shows strong dispersion among the samples. Furthermore we have measured the superconducting phase diagrams with an A.C. specific heat technique under magnetic field and under pressure up to 4.2 GPa, and we show that the two transitions, Tc1 and Tc2, exhibit similar behaviours with magnetic field and pressure. We find a strong change in the pressure dependence of Tc's above 2 GPa which might be related to a change in the nature of the superconductivity under pressure (at least partially mediated by fluctuations and only by phonons at respectively low and high pressure) which may be linked to the increase of the crystal field gap of the Pr ions. Analysis of the upper critical field shows the presence of at least two superconducting bands and concludes to a singlet nature of the pairing. A strong distortion of the flux-line lattice, which is constant with temperature and field, is obtained by small angle neutron scattering measurement

  8. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

    Science.gov (United States)

    Renteria, E. J.; Muniz, A. J.; Addamane, S. J.; Shima, D. M.; Hains, C. P.; Balakrishnan, G.

    2015-05-01

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2- μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

  9. Three dimensional atom probe imaging of GaAsSb quantum rings.

    Science.gov (United States)

    Beltrán, A M; Marquis, E A; Taboada, A G; Ripalda, J M; García, J M; Molina, S I

    2011-07-01

    Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33. Copyright © 2011 Elsevier B.V. All rights reserved.

  10. Controlled Synthesis of Sb 2 O 3 Nanoparticles, Nanowires, and Nanoribbons

    Directory of Open Access Journals (Sweden)

    2006-01-01

    Full Text Available Sb 2 O 3 nanoparticles, nanowires, and nanoribbons have been selectively synthesized in a controlled manner under mild conditions by using CTAB as a soft template. By adopting Sb ( OH 4 − as an inorganic precursor and the concentration of CTAB as an adjusting parameter, morphologies of Sb 2 O 3 nanostructures can be selectively controlled. Typically, C CTAB <0.15 mmol favors the formation of nanoparticles (product one or short form P1; when the concentration of CATB is in the range 0.15–2.0 mmol, nanowires (P2 dominate the products; nanoribbons (P3 form above the concentration of 2.0 mmol, and when the concentration of CTAB goes further higher, treelike bundles of nanoribbons could be achieved. The method in the present study has potential advantages of easy handling, relatively low-cost, and large-scale production. The facile and large-scale synthesis of varied Sb 2 O 3 nanostructures is believed to be useful for the application of catalysis and flame retardance.

  11. GeSbTe deposition for the PRAM application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Junghyun [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Choi, Sangjoon [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Lee, Changsoo [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kang, Yoonho [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kim, Daeil [School of Materials Science and Engineering. University of Ulsan, San 29, Mugeo-Dong, Nam-Gu, Ulsan 680-749 (Korea, Republic of)]. E-mail: dkim84@mail.ulsan.ac.kr

    2007-02-15

    GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH{sub 3}){sub 2}){sub 4}, Sb(N(CH{sub 3}){sub 2}){sub 4}, and Te(i-Pr){sub 2} (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H{sub 2} plasma-assisted ALD process. Film resistivity abruptly changed after an N{sub 2} annealing process above a temperature of 350 deg. C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%.

  12. Phase transformation in Mg—Sb3Te thin films

    International Nuclear Information System (INIS)

    Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

    2014-01-01

    Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

  13. Epitaxial growth of Ge-Sb-Te based phase change materials

    International Nuclear Information System (INIS)

    Perumal, Karthick

    2013-01-01

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  14. Sb,123121 nuclear quadrupole resonance as a microscopic probe in the Te-doped correlated semimetal FeSb2: Emergence of electronic Griffith phase, magnetism, and metallic behavior

    Science.gov (United States)

    Gippius, A. A.; Zhurenko, S. V.; Hu, R.; Petrovic, C.; Baenitz, M.

    2018-02-01

    Sb,123121 nuclear quadrupole resonance (NQR) was applied to Fe(Sb1-xTex)2 in the low doping regime (x =0 , 0.01, and 0.05) as a microscopic zero field probe to study the evolution of 3 d magnetism and the emergence of metallic behavior. Whereas the NQR spectra itself reflects the degree of local disorder via the width of the individual NQR lines, the spin lattice relaxation rate (SLRR) 1 /T1(T ) probes the fluctuations at the Sb site. The fluctuations originate either from conduction electrons or from magnetic moments. In contrast to the semimetal FeSb2 with a clear signature of the charge and spin gap formation in 1 /T1(T ) T [˜exp/(Δ kBT ) ] , the 1% Te-doped system exhibits almost metallic conductivity and the SLRR nicely confirms that the gap is almost filled. A weak divergence of the SLRR coefficient 1 /T1(T ) T ˜T-n˜T-0.2 points towards the presence of electronic correlations towards low temperatures. This is supported by the electronic specific heat coefficient γ =(Cel/T ) showing a power-law divergence γ (T ) ˜T-m˜(1/T1T ) 1 /2˜T-n /2˜Cel/T which is expected in the renormalized Landau Fermi liquid theory for correlated electrons. In contrast to that the 5% Te-doped sample exhibits a much larger divergence in the SLRR coefficient showing 1 /T1(T ) T ˜T-0.72 . According to the specific heat divergence a power law with n =2 m =0.56 is expected for the SLRR. This dissimilarity originates from admixed critical magnetic fluctuations in the vicinity of antiferromagnetic long range order with 1 /T1(T ) T ˜T-3 /4 behavior. Furthermore Te-doped FeSb2 as a disordered paramagnetic metal might be a platform for the electronic Griffith phase scenario. NQR evidences a substantial asymmetric broadening of the Sb,123121 NQR spectrum for the 5% sample. This has a predominant electronic origin in agreement with the electronic Griffith phase and stems probably from an enhanced Sb-Te bond polarization and electronic density shift towards the Te atom inside Sb

  15. Characterization of Cu3SbS3 thin films grown by thermally diffusing Cu2S and Sb2S3 layers

    OpenAIRE

    Hussain, Arshad; Ahmed, Rashid; Ali, N.; Shaari, A.; Luo, Jing-Ting; Fu, Yong Qing

    2017-01-01

    Copper antimony sulphide (Cu3SbS3) with a p-type conductivity and optical band gaps in the range of 1.38 to 1.84 eV is considered to be a promising solar harvesting material with non-toxic and economical elements. In this study, we reported the fabrication of Cu3SbS3 thin films using successive thermal evaporation of Cu2S and Sb2S3 layers followed by annealing in an argon atmosphere at a temperature range of 300-375°C. The structural and optical properties of the as-deposited and annealed fil...

  16. Experimental and theoretical investigation of topological and energetic characteristics of Sb complexes reversibly binding molecular oxygen.

    Science.gov (United States)

    Fukin, Georgy K; Baranov, Evgenii V; Jelsch, Christian; Guillot, Benoît; Poddel'sky, Andrey I; Cherkasov, Vladimir K; Abakumov, Gleb A

    2011-07-28

    The experimental distribution of electron density in Ph(3)(4,5-OMe-3,6-Bu(t)-Cat)Sb·MeCN (1*) and Ph(3)(4,5-N(2)C(4)H(6)-3,6-Bu(t)-Cat)Sb·MeOH (2*) complexes was studied. According to atoms in molecules theory, the Sb-C(Ph), Sb-O(catecholate), and Sb···N(O) bonds are intermediate, whereas the O-C and C-C bonds are covalent, respectively. The energy of the Sb···N(MeCN) and Sb···O(MeOH) bonds are 7.0 and 11.3 kcal/mol according to the Espinosa equation. Density functional theory and Hartree-Fock calculations were carried out for a series of catecholate and amidophenolate complexes of antimony(V). It was shown that such calculations reliably reproduce geometrical and topological parameters and therefore can be used for a criterion search of dioxygen reversible binding by the catecholate and amidophenolate complexes of antimony(V). It was found that the "critical" value of the HOMO energy vary in the range from -5.197 to -5.061 eV for reversible binding of dioxygen complexes. This can serve as a thermodynamic criterion to predict the possibility of the dioxygen reversible binding by the catecholate and amidophenolate complexes of Sb(V). The HOMO energies correlate with the conversion of the catecholate and amidophenolate complexes in corresponding spiroendoperoxide derivatives as well. The contribution of the atom orbitals of the carbon atoms in the five-membered metallocycle to HOMO in complexes with different substitutes in the 4- and 5-positions of the catecholate ligand allows predicting the place of dioxygen addition. © 2011 American Chemical Society

  17. Leaching of Antimony (Sb)from Municipal Solid Waste Incineration (MSWI) Residues

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, Inga

    2004-07-01

    The mobility of antimony (Sb) in municipal solid waste incineration (MSWI) residues often exceeds the limit values stipulated by the European Union. As an ash treatment by washing is conceivable, this work investigated the Sb release from Swedish bottom ash and fly ash when mixed with water. The leaching experiments revealed the factors significantly (a = 0.05) affecting Sb release from the ashes. The following factors were investigated: Liquid to solid ratio (L/S), time, pH, carbonation (treatment with CO{sub 2}), ultrasonics and temperature. The data were evaluated using multiple linear regression (MLR). The impact of the factors could be quantified. The maximum Sb release calculated was 13 mg/kg DM for bottom ash and 51 mg/kg DM for fly ash. The derived models explained the observed data well. Nevertheless, the calculated values were subject to a high uncertainty. For bottom ash, a lowering of the Sb total content of approximately 22% could be achieved. If this also involves a sufficient lowering of the Sb mobility to meet EU limit values could not yet be assessed. Chemical equilibrium calculations were performed to explain the empirical results. However, no solid phases controlling Sb release from the ashes could be identified.

  18. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  19. Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach

    Directory of Open Access Journals (Sweden)

    V. Nagarajan

    2014-06-01

    Full Text Available The realistic InSb nanostructures namely InSb nanoring, InSb nanocube, InSb nanocube-18, InSb nanosheet, InSb nanocage and InSb nanocube-27 are simulated and optimized successfully using B3LYP/LanL2DZ basis set. The stability of InSb nanostructures is studied in terms of binding energy, vibrational studies and calculated energy. The electronic properties of InSb nanostructures are discussed using ionization potential, electron affinity and HOMO–LUMO gap. Point symmetry and dipole moment of InSb nanostructures are reported. Incorporation of impurity atom in InSb nanostructures is studied using embedding energy. The present study provides the information regarding the enhanced electronic properties of InSb nanostructure which finds its potential importance in microelectronics and optoelectronic devices.

  20. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

    International Nuclear Information System (INIS)

    Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

    2014-01-01

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

  1. Phase diagrams of novel Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} quasi-ternary system following DTA and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Barchiy, I.E.; Tatzkar, A.R. [Department of Chemistry, Uzhgorod National University, Pidgirna St., 46, Uzhgorod 88000 (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, Lviv 79010 (Ukraine); Plucinski, K., E-mail: kpluc2006@wp.pl [Electronics Department, Military University Technology, Warsaw, Kaliskiego 2, Warsaw 00-908 (Poland)

    2016-06-25

    Phase relation in the Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} quasiternary system were studied by the DTA and X-ray diffraction in combination with mathematical modeling. The phase diagrams of the Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2} and Tl{sub 2}SnSe{sub 3}–TlSbSe{sub 2} systems, the perspective views of the phase interaction in the ternary system, the liquidus surface projection, the isothermal section at 423 K were built for the first time. The Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} system is of the invariant eutectic type and is characterized by the formation of limited solid solutions following initial ternary compounds. New complex compounds are not formed. - Highlights: • Two Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2},Tl{sub 2}SnSe{sub 3}–TlSbSe{sub 2} systems were explored. • Invariant processes in the ternary system were determined. • New complex compounds were not observed in ternary system.

  2. The crystal structure of Cu9.1(1)TeSb3, a stuffed derivative of Cr3Si

    DEFF Research Database (Denmark)

    Søtofte, Inger; Makovicky, E.; Karup-Møller, Sven

    1998-01-01

    The intermetallic compound Cu9.1(1)TeSb3 prepared at 973 K is an ordered member of the solid solution Cu64Te31Sb5-Cu70Te8Sb22 which also exists, for more limited composition ranges, between 673 K and 1173 K. It is a stuffed derivative of the structure type A15 (Cr3Si). Te is surrounded by twelve 3....../4-occupied Cu-positions in the vertices of a cubically-deformed icosahedron (Cu-Te = 2.614 Å) which itself is nested in an Sb-icosahedron (Cu-Sb = 2.777 Å (x2) and 2.603 Å). The Sb array corresponds to the Cr array in Cr3Si....

  3. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  4. Preparation of the Wire of ZChSnSb11-6 Used for Remanufacturing Thermal Spraying

    Science.gov (United States)

    Zhang, B.; Yang, Z. Y.; Fu, D. X.; Li, X. F.; Chen, W.

    Tin base Babbitt alloy widely used in bearing bush production and repair, the performance of ZChSnSb11-6 is better than ZChSnSb8-4.But as a result of as-cast structure of ZChSnSb11-6 is rich in big hard phase, its processing performance is bad, in this paper, through the optimization of smelting, casting, extrusion, drawing and other processes we have been successfully prepared ZChSnSb11-6 wire suitable for thermal spraying. Through metallographic examination, micro hardness, bond strength and porosity testing, it was proved that the wire meet the requirements of bearing manufacturing thermal spraying.

  5. Solution-Processed hybrid Sb2 S3 planar heterojunction solar cell

    Science.gov (United States)

    Huang, Wenxiao; Borazan, Ismail; Carroll, David

    Thin-film solar cells based on inorganic absorbers permit a high efficiency and stability. Among or those absorber candidates, recently Sb2S3 has attracted extensive attention because of its suitable band gap (1.5eV ~1.7 eV) , strong optical absorption, low-cost and earth-abundant constituents. Currently high-efficiency Sb2S3 solar cells have absorber layer deposited on nanostructured TiO2 electrodes in combination with organic hole transport material (HTM) on top. However it's challenging to fill the nanostructured TiO2 layer with Sb2S3 and subsequently by HTM, this leads to uncovered surface permits charge recombination. And the existing of Sb2S3/TiO2/HTM triple interface will enhance the recombination due to the surface trap state. Therefore, a planar junction cell would not only have simpler structure with less steps to fabricate but also ideally also have a higher open circuit voltage because of less interface carrier recombination. By far there is limited research focusing on planar Sb2S3 solar cell, so the feasibility is still unclear. Here, we developed a low-toxic solution method to fabricate Sb2S3 thin film solar cell, then we studied the morphology of the Sb2S3 layer and its impact to the device performance. The best device with a structure of FTO/TiO2/Sb2S3/P3HT/Ag has PCE over 5% which is similar or higher than yet the best nanostructure devices with the same HTM. Furthermore, based on solution engineering and surface modification, we improved the Sb2S3 film quality and achieved a record PCE. .

  6. Thermodynamics of (Ga, In)-Sb-O-Si and impact on dewetting process

    Energy Technology Data Exchange (ETDEWEB)

    Sylla, L. [Cyberstar, Echirolles (France); Duffar, T. [SIMaP-EPM, Saint Martin d' Heres (France)

    2011-11-15

    A thermodynamic study is performed for the systems (Ga or In)-Sb-O-Si in order to better understand the difference observed during dewetting experiments of GaSb and InSb in silica ampoules. Results show that the melts can be considered as non reactive toward silica. When the atmosphere is clean ({<=}1 ppm O{sub 2}), no oxide is formed, while, under oxidising atmosphere, oxides exist above the melting point of the antimonide and are known to increase the wetting angle of the melt on the crucible. However the temperature range for oxide stability is smaller in the case of InSb and this may explain why dewetting is easy for GaSb in presence of oxygen, while it is difficult for InSb. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Gamma - Gamma angular correlations in the decay of Sb124 (93 sec) and Sb128 (10.8 min)

    Energy Technology Data Exchange (ETDEWEB)

    Vervier, J.; Binon, F.; del Marmol, P.

    1963-10-15

    The decay of Sb124 and Sb128 to Te124 and Te128, respectively, that involve two γ-ray triple cascades was investigated. Angular correlations were measured for these two triple cascades in order to confirm a spin 4 value for the 1.248-keV level in Te124 and the 1.508-keV level in Te128 and to obtain the spin of the 1.753-keV level in Te124 and the 1.828-keV level in Te128. (C.E.S.)

  8. Smooth interface effects on the confinement properties of GaSb/Al xGa 1- xSb quantum wells

    Science.gov (United States)

    Adib, Artur B.; de Sousa, Jeanlex S.; Farias, Gil A.; Freire, Valder N.

    2000-10-01

    A theoretical investigation on the confinement properties of GaSb/Al xGa 1- xSb single quantum wells (QWs) with smooth interfaces is performed. Error function ( erf)-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs.

  9. Influence of Ce in magnetic behaviour of CeCrSb3

    International Nuclear Information System (INIS)

    Inamdar, Manjusha; Thamizhavel, A.; Ramakrishnan, S.; Das, Amitabh; Prokes, Karel

    2009-01-01

    RCrSb 3 (R = rare earth ion) presents us a system to study magnetic interplay of d moments of Cr and f moments of rare earth ions. These compounds crystallize in orthorhombic structure, space group Pbcm. The crystal structure is highly anisotropic, with a axes being twice as long as band c. It has quasi two dimensional structure with layers of RSb and CrSb 2 stacked along a axis. Cr is surrounded by Sb ions forming face(edge) sharing octahedra along c(b) axes. The dual magnetic transitions exhibited by Cr in LaCrSb 3 , arouses interest in RCrSb 3 series. LaCrSb 3 undergoes FM transition below 123 K and on further lowering of temperature exhibits an AFM transition below 100 K with moments oriented along c axes. The AFM phase vanishes with application of small field of 1kOe. The coexistence of FM exchange along b and a axes with AFM exchange along c axis below 100 K is interesting. However, the magnetization along a axis is very small

  10. Growth of GaSb1-xBix by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Roy, Ivy Saha

    2012-01-01

    Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi ......As substrates were compared and no apparent difference for Bi incorporation was found.......Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi...... concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and Ga...

  11. Polarity-sensitive nanocarrier for oral delivery of Sb(V and treatment of cutaneous leishmaniasis

    Directory of Open Access Journals (Sweden)

    Lanza JS

    2016-05-01

    Full Text Available Juliane S Lanza,1 Flaviana R Fernandes,1 José D Corrêa-Júnior,2 José MC Vilela,3 Rogério Magalhães-Paniago,4 Lucas AM Ferreira,5 Margareth S Andrade,3 Cynthia Demicheli,6 Maria N Melo,7 Frédéric Frézard1 1Department of Physiology and Biophysics, 2Department of Morphology, Instituto de Ciências Biológicas (ICB, Universidade Federal de Minas Gerais (UFMG, 3Innovation and Technology Center SENAI FIEMG – Campus CETEC, 4Department of Physics, Instituto de Ciências Exatas (ICEX, 5Department of Pharmaceutical Products, Faculty of Pharmacy, Universidade Federal de Minas Gerais (UFMG, 6Department of Chemistry, Instituto de Ciências Exatas (ICEX, 7Department of Parasitology, Instituto de Ciências Biológicas (ICB, Universidade Federal de Minas Gerais (UFMG, Belo Horizonte, Brazil Abstract: There is a great need for orally active drugs for the treatment of the neglected tropical disease leishmaniasis. Amphiphilic Sb(V complexes, such as 1:3 Sb–N-octanoyl-N-methylglucamide complex (SbL8, are promising drug candidates. It has been previously reported that SbL8 forms kinetically stabilized nanoassemblies in water and that this simple dispersion exhibits antileishmanial activity when given by oral route to a murine model of visceral leishmaniasis. The main objective of the present work was to interfere in the structural organization of these nanoassemblies so as to investigate their influence on the oral bioavailability of Sb, and ultimately, optimize an oral formulation of SbL8 for the treatment of cutaneous leishmaniasis. The structural organization of SbL8 nanoassemblies was manipulated through addition of propylene glycol (PG to the aqueous dispersion of SbL8. The presence of 50% (v/v PG resulted in the loss of hydrophobic microenvironment, as evidenced by fluorescence probing. However, nanostructures were still present, as demonstrated by dynamic light scattering, small-angle X-ray scattering, and atomic force microscopy (AFM. A

  12. Raman spectra, microstructure and superconducting properties of Sb(III)-YBCO composite superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Elsabawy, Khaled M. [Chemistry Department, Faculty of Science, Tanta University, Tanta (Egypt)]. E-mail: ksabawy@yahoo.com

    2005-11-15

    The pure YBCO (YBa{sub 2}Cu{sub 3}O{sub 7}) and its variant antimony containing composites with general formula; Y{sub 1+x}Sb {sub x}Ba{sub 2}Cu{sub 3}O {sub z}, where x = 0.1, 0.2, 0.4 and 0.6 mol%, respectively, were prepared by the solid-state reaction route. X-ray measurements indicated that Sb{sup 3+} ions have a negligible effect on the main crystalline structure and substitutes Y-sites successfully in lattice structure of 123-YBCO at low concentrations of doping (x = 0.1 {sup {yields}} 0.2). From SE-microscopy mapping and EDX elemental analysis, Sb{sup 3+} was detected qualitatively with good approximation to the actual molar ratio but not observed at 123-YBCO grain boundaries which confirm that antimony (III) has diffused regularly into material bulk of superconducting 123-YBCO-phase at low concentrations. Additions of Sb(III) affected sharply on the main vibrating modes of YBCO regime particularly, on the apical oxygen (O{sub 4}) vibrational mode A {sub 1g}. Magnetic susceptibility measurements proved that antimony oxide additions have slight effect on the transport properties of YBCO-composites regime.

  13. Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

    International Nuclear Information System (INIS)

    Zhang Ting; Song Zhitang; Liu Bo; Feng Songlin

    2008-01-01

    Te-free environmental friendly Si x Sb 100−x phase-change materials are investigated. The binary material, which is compatible with the complementary metal-oxide-semiconductor manufacturing process, is outstanding in various properties. Si x Sb 100−x shows a much better data retention as compared with Ge 2 Sb 2 Te 5 . The density change for Si 10 Sb 90 and Si 16 Sb 84 is only about 3% and 3.8%, respectively. The failure times for Si 10 Sb 90 and Si 16 Sb 84 are about 10 3 and 10 6 times longer than that of Ge 2 Sb 2 Te 5 at 110 °C. The crystallization temperature of Si x Sb 100−x increases with silicon content within the material. Si x Sb 100−x materials are good candidates for the phase-change memory applications

  14. Enhancement of thermoelectric efficiency of CoSb3-based skutterudites by double filling with K and Tl

    Directory of Open Access Journals (Sweden)

    Ken eKurosaki

    2014-10-01

    Full Text Available The high-temperature thermoelectric properties of thallium (Tl and potassium (K double-filled cobalt antimonide (CoSb3-based skutterudites with nominal compositions TlxK0.3Co4Sb12 (x = 0.1–0.3 were investigated. The filling fraction of Tl in CoSb3 was enhanced by co-filling with K, which resulted in all of the samples showing the filled-skutterudite single phase. Owing to the high filling ratio, the carrier concentration in the sample with x = 0.3 was as high as 4.3 × 1020 cm−3 at room temperature. Furthermore, quite low lattice thermal conductivity (as low as 0.9 W m−1 K−1 was obtained for the sample with x = 0.3, probably because of strong phonon scattering by the Tl and K co-rattling effect, which resulted in a maximum zT of around one at 773 K.

  15. Whole genome sequencing of Mycobacterium tuberculosis SB24 isolated from Sabah, Malaysia

    Directory of Open Access Journals (Sweden)

    Noraini Philip

    2016-09-01

    Full Text Available Mycobacterium tuberculosis (M. tuberculosis is the causative agent of tuberculosis (TB that causes millions of death every year. We have sequenced the genome of M. tuberculosis isolated from cerebrospinal fluid (CSF of a patient diagnosed with tuberculous meningitis (TBM. The isolated strain was referred as M. tuberculosis SB24. Genomic DNA of the M. tuberculosis SB24 was extracted and subjected to whole genome sequencing using PacBio platform. The draft genome size of M. tuberculosis SB24 was determined to be 4,452,489 bp with a G + C content of 65.6%. The whole genome shotgun project has been deposited in NCBI SRA under the accession number SRP076503.

  16. Beryllium implant activation and damage recovery study in n-type GaSb

    Science.gov (United States)

    Rahimi, N.; Behzadirad, M.; Renteria, Emma J.; Shima, D. M.; Muniz, Ayse J.; Busani, T.; Lavrova, Olga; Balakrishnan, G.; Lester, L. F.

    2014-03-01

    Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.

  17. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Oswald, Jiří; Pangrác, Jiří; Zíková, Markéta; Kubištová, Jana; Komninou, Ph.; Kioseoglou, J.; Kuldová, Karla; Hulicius, Eduard

    2013-01-01

    Roč. 114, č. 17 (2013), "174305-1"-"174305-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S; GA MŠk 7AMB12GR034; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : quantum dots * metal-organic vapor phase epitaxy * InAs * GaAs * GaAsSb Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  18. Structural characterization of half-metallic Heusler compound NiMnSb

    Energy Technology Data Exchange (ETDEWEB)

    Nowicki, L. E-mail: lech.nowicki@fuw.edu.pl; Abdul-Kader, A.M.; Bach, P.; Schmidt, G.; Molenkamp, L.W.; Turos, A.; Karczewski, G

    2004-06-01

    High resolution X-ray diffraction (HRXRD) and Rutherford backscattering/channeling (RBS/c) techniques were used to characterize layers of NiMnSb grown by molecular beam epitaxy (MBE) on InP with a In{sub x}Ga{sub 1-x}As buffer. Angular scans in the channeling mode reveal that the crystal structure of NiMnSb is tetragonally deformed with c/a=1.010{+-}0.002, in agreement with HRXRD data. Although HRXRD demonstrates the good quality of the pseudomorphic NiMnSb layers the channeling studies show that about 20% of atoms in the layers do not occupy lattice sites in the [0 0 1] rows of NiMnSb. The possible mechanisms responsible for the observed disorder are discussed.

  19. Dislocation motion in InSb crystals under a magnetic field

    CERN Document Server

    Darinskaya, E V; Erofeeva, S A

    2002-01-01

    Dislocation displacements under the action of a permanent magnetic field without mechanical loading in differently doped InSb crystals are investigated. The dependences of the mean dislocation path length and the relative number of divergence and tightening half-loops on the magnetic induction and preliminary load are obtained. Experiments on n-InSb crystals with Te impurities and on p-InSb crystals with Ge impurities have shown a sensitivity of the magnetoplasticity to the conductivity type and the dopant content. Study of the magnetoplastic effect in the initial deformed InSb crystals shows that internal stresses decrease the lengths of divergence dislocation paths and simultaneously increase the threshold magnetic field above which the magnetoplastic effect exists. Possible reasons for the observed phenomena are discussed.

  20. Magnetic structure of the YbMn2SbBi compound

    International Nuclear Information System (INIS)

    Morozkin, A.V.; Manfrinetti, P.

    2011-01-01

    Graphical abstract: Display Omitted Research highlights: → A neutron diffraction investigation in zero applied field of La 2 O 2 S-type YbMn 2 SbBi shows antiferromagnetic ordering below 138(3) K and ferrimagnetic ordering below 112(3) K. → Between 138 and 112 K, the magnetic structure of YbMn 2 SbBi consists of antiferromagnetically coupled ab-plane magnetic moments of the manganese atoms (D 1d magnetic point group). → Below 112(3) K, the magnetic structure of YbMn 2 SbBi becames the sum antiferromagnetic component with D 1d magnetic point group and ferromagnetic one with C 2 magnetic point group. → The magnitude of Yb and Mn magnetic moments in YbMn 2 SbBi at 2 K (M Yb = 3.6(2) μ B , M Mn = 3.5(2) μ B ) correspond to the trivalent state of the Yb ions and tetravalent state of the Mn ions. - Abstract: A neutron diffraction investigation has been carried out on the trigonal La 2 O 2 S-type (hP5, space group P3-bar ml, No. 164; also CaAl 2 Si 2 -type) YbMn 2 SbBi intermetallic compound. The YbMn 2 SbBi presents antiferromagnetic ordering below 138(3) K and ferrimagnetic ordering below 112(3) K. Between 138 and 112 K, the magnetic structure of YbMn 2 SbBi consists of antiferromagnetically coupled ab-plane magnetic moments of the manganese atoms (D 1d magnetic point group). Below 112(3) K, the ferromagnetic components of Yb and Mn begin to develop, and the magnetic structure of YbMn 2 SbBi becames the sum antiferromagnetic component with D 1d magnetic point group and ferromagnetic one with C 2 magnetic point group. The magnitude of Yb and Mn magnetic moments in YbMn 2 SbBi at 2 K (M Yb = 3.6(2) μ B , M Mn = 3.5(2) μ B ) correspond to the trivalent state of the Yb ions and tetravalent state of the Mn ions.

  1. The Fermi surface of CeSb

    International Nuclear Information System (INIS)

    Crabtree, G.W.; Aoki, H.; Joss, W.; Hulliger, F.

    1987-01-01

    This paper uses accurate Fermi surface measurements as a test of hybridization models in CeSb. Detailed measurements of the Fermi surface geometry and effective masses are presented which show a number of unusual properties associated with the magnetic structure and anisotropy. Measurements are compared with predictions of a band structure in which the f-electron is assumed to be local, interacting with the conduction electrons only through anisotropic Coulomb and exchange interactions. This model reproduces all the unusual features observed in the measurements and suggests that hybridization is not essential to describing the electronic properties of CeSb

  2. Peptide-derivatized SB105-A10 dendrimer inhibits the infectivity of R5 and X4 HIV-1 strains in primary PBMCs and cervicovaginal histocultures.

    Directory of Open Access Journals (Sweden)

    Isabella Bon

    Full Text Available Peptide dendrimers are a class of molecules that exhibit a large array of biological effects including antiviral activity. In this report, we analyzed the antiviral activity of the peptide-derivatized SB105-A10 dendrimer, which is a tetra-branched dendrimer synthetized on a lysine core, in activated peripheral blood mononuclear cells (PBMCs that were challenged with reference and wild-type human immunodeficiency virus type 1 (HIV-1 strains. SB105-A10 inhibited infections by HIV-1 X4 and R5 strains, interfering with the early phases of the viral replication cycle. SB105-A10 targets heparan sulfate proteoglycans (HSPGs and, importantly, the surface plasmon resonance (SPR assay revealed that SB105-A10 strongly binds gp41 and gp120, most likely preventing HIV-1 attachment/entry through multiple mechanisms. Interestingly, the antiviral activity of SB105-A10 was also detectable in an organ-like structure of human cervicovaginal tissue, in which SB105-A10 inhibited the HIV-1ada R5 strain infection without altering the tissue viability. These results demonstrated the strong antiviral activity of SB105-A10 and suggest a potential microbicide use of this dendrimer to prevent the heterosexual transmission of HIV-1.

  3. Fermi surfaces of the pyrite-type cubic AuSb2 compared with split Fermi surfaces of the ullmannite-type cubic chiral NiSbS and PdBiSe

    Science.gov (United States)

    Nishimura, K.; Kakihana, M.; Nakamura, A.; Aoki, D.; Harima, H.; Hedo, M.; Nakama, T.; Ōnuki, Y.

    2018-05-01

    We grew high-quality single crystals of AuSb2 with the pyrite (FeS2)-type cubic structure by the Bridgman method and studied the Fermi surface properties by the de Haas-van Alphen (dHvA) experiment and the full potential LAPW band calculation. The Fermi surfaces of AuSb2 are found to be similar to those of NiSbS and PdBiSe with the ullmannite (NiSbS)-type cubic chiral structure because the crystal structures are similar each other and the number of valence electrons is the same between two different compounds. Note that each Fermi surface splits into two Fermi surfaces in NiSbS and PdBiSe, reflecting the non-centrosymmetric crystal structure.

  4. Primary radioactivity standardization and gamma intensities determination of {sup 124}Sb

    Energy Technology Data Exchange (ETDEWEB)

    Iwahara, A. [Laboratorio Nacional de Metrologia das Radiacoes Ionizantes (LNMRI)/Instituto de Radioprotecao e Dosimetria (IRD)/Comissao Nacional de Energia Nuclear - CNEN, Av. Salvador Allende, s/no, Recreio, CEP 22780-160, Rio de Janeiro (Brazil)], E-mail: iwahara@ird.gov.br; Delgado, J.U.; Poledna, R.; Silva, C.J. da; Almeida, M.C.M. de; Silva, R.L. da [Laboratorio Nacional de Metrologia das Radiacoes Ionizantes (LNMRI)/Instituto de Radioprotecao e Dosimetria (IRD)/Comissao Nacional de Energia Nuclear - CNEN, Av. Salvador Allende, s/no, Recreio, CEP 22780-160, Rio de Janeiro (Brazil)

    2009-04-21

    A solution containing {sup 124}Sb was primarily standardized by the 4{pi}{beta}-{gamma} coincidence and anticoincidence extrapolation methods in the frame of the EUROMET 907 international comparison organized by Laboratoire National Henri Bequerel (LNHB)/France, in 2007. The main purposes of this exercise are the improvement in the uncertainties on the gamma-ray emission intensities and they clarify the discrepancies verified among the intensity values for many weak gamma rays reported in the literature. In this work the results of the activity obtained were used to determine the absolute and relative gamma-ray intensities using a planar and coaxial HPGe detectors calibrated by {sup 152}Eu and {sup 116m}Ho multi-gamma standard sources covering the energy range from 20 to 1408 keV. Additionally the half-life of {sup 124}Sb was determined following the decay of a solution of {sup 124}Sb contained in a glass ampoule over a period of three half-lives using two 4{pi}{gamma} ionization chambers.

  5. Preparation and Characterization of Sb2Te3 Thin Films by Coevaporation

    Directory of Open Access Journals (Sweden)

    Bin Lv

    2010-01-01

    Full Text Available Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper. Sb2Te3 thin films were characterized by x-ray diffraction (XRD, x-ray fluorescence (XRF, atomic force microscopy (AFM, x-ray photoelectron spectroscopy (XPS, electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred from in situ electrical conductivity measurements. The results indicate that as-grown Sb2Te3 thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

  6. Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

    International Nuclear Information System (INIS)

    Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

    2012-01-01

    A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

  7. Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

    Science.gov (United States)

    Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Höfling, S.

    2018-04-01

    We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 μm, and the RTD-PDs show peak-to-valley current ratios up to 4.3 with a peak current density of 12 A/cm-2. The incorporation of the quaternary absorption layer enables the RTD-PDs to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm, respectively, the RTD-PDs reach responsivities up to 0.97 A/W. Thus, RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.

  8. SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P

    Directory of Open Access Journals (Sweden)

    N. K. Zhumashev

    2016-01-01

    Full Text Available Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P emitting at T=300 K in the wavelength range 3.44.1 micrometers. The aim of the study was to search for the ways of increasing the diode efficiency. Methods. The heterostructures were grown from metal-organic chemical compounds with the use of vapor-phase epitaxial technique. The spectra were recorded under pulse excitation with the use of computer-controlled installation employing MDR-23 grating monochromator and a lock-in amplifier. InSb photodiode was used as a detector. Comparative study of electroluminescence spectra of the diodes was carried out at the temperatures equal to 300 K and 77 K. We compared the obtained data with the calculation results of the band diagrams of the heterostructures. Main Results. As a result of comparative study of the electroluminescence spectra of the diodes recorded at 300 K and 77 K we have established that increasing of their efficiency is hindered by substantial influence of Auger recombination. For the first time at 77 К we have observed the effect of stimulated emission from InAsSb active layer in light-emitting structures made of InAs/InAsSb/InAsSbP. For heterostructures with quantum wells InAs/(InAs/InAsSb/InAsSbP we have found out that at 77 К the carrier recombination occurs outside quantum wells, which points out to the insufficient carrier localization in the active layer. Thus, we have shown that the efficiency of mid-infrared light-emitting diodes based on InAs(Sb,P can be increased via suppression of Auger-recombination and improvement of carrier localization in the active region. Practical Relevance. The results of the study can be used for development of heterostructures for mid-infrared light-emitting diodes.

  9. Silver(I) complexes of the weakly coordinating solvents SO(2) and CH(2)Cl(2): crystal structures, bonding, and energetics of [Ag(OSO)][Al{OC(CF(3))(3)}(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(CH(2)Cl(2))(2)][SbF(6)].

    Science.gov (United States)

    Decken, Andreas; Knapp, Carsten; Nikiforov, Grigori B; Passmore, Jack; Rautiainen, J Mikko; Wang, Xinping; Zeng, Xiaoqing

    2009-06-22

    Pushing the limits of coordination chemistry: The most weakly coordinated silver complexes of the very weakly coordinating solvents dichloromethane and liquid sulfur dioxide were prepared. Special techniques at low temperatures and the use of weakly coordinating anions allowed structural characterization of [Ag(OSO)][Al{OC(CF(3))(3)}(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(Cl(2)CH(2))(2)][SbF(6)] (see figure). An investigation of the bonding shows that these complexes are mainly stabilized by electrostatic monopole-dipole interactions.The synthetically useful solvent-free silver(I) salt Ag[Al(pftb)(4)] (pftb=--OC(CF(3))(3)) was prepared by metathesis reaction of Li[Al(pftb)(4)] with Ag[SbF(6)] in liquid SO(2). The solvated complexes [Ag(OSO)][Al(pftb)(4)], [Ag(OSO)(2/2)][SbF(6)], and [Ag(CH(2)Cl(2))(2)][SbF(6)] were prepared and isolated by special techniques at low temperatures and structurally characterized by single-crystal X-ray diffraction. The SO(2) complexes provide the first examples of coordination of the very weak Lewis base SO(2) to silver(I). The SO(2) molecule in [Ag(OSO)][Al(pftb)(4)] is eta(1)-O coordinated to Ag(+), while the SO(2) ligands in [Ag(OSO)(2/2)][SbF(6)] bridge two Ag(+) ions in an eta(2)-O,O' (trans,trans) manner. [Ag(CH(2)Cl(2))(2)][SbF(6)] contains [Ag(CH(2)Cl(2))(2)](+) ions linked through [SbF(6)](-) ions to give a polymeric structure. The solid-state silver(I) ion affinities (SIA) of SO(2) and CH(2)Cl(2), based on bond lengths and corresponding valence units in the corresponding complexes and tensimetric titrations of Ag[Al(pftb)(4)] and Ag[SbF(6)] with SO(2) vapor, show that SO(2) is a weaker ligand to Ag(+) than the commonly used weakly coordinating solvent CH(2)Cl(2) and indicated that binding strength of SO(2) to silver(I) in the silver(I) salts increases with increasing size of the corresponding counteranion ([Al(pftb)(4)](-)>[SbF(6)](-)). The experimental findings are in good agreement with theoretical gas-phase ligand

  10. FP-LAPW calculations of the elastic, electronic and thermoelectric properties of the filled skutterudite CeRu4Sb12

    International Nuclear Information System (INIS)

    Shankar, A.; Rai, D.P.; Chettri, Sandeep; Khenata, R.; Thapa, R.K.

    2016-01-01

    We have investigated the electronic structure, elastic and thermoelectric properties of the filled skutterudite CeRu 4 Sb 12 using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) approach is used to perform the calculations presented here. The electronic structure calculation suggests an indirect band gap semiconducting nature of the material with energy band gap of 0.08 eV. The analysis of the elastic constants at relaxed positions reveals the ductile nature of the sample material with covalent contribution in the inter-atomic bonding. The narrow band gap semiconducting nature with high value of Seebeck coefficient suggests the possibility of the thermoelectric application of the material. The analysis of the thermal transport properties confirms the result obtained from the energy band structure of the material with high thermopower and dimensionless figure of merit 0.19 at room temperature.

  11. Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots

    Science.gov (United States)

    Tile, Ngcali; Ahia, Chinedu C.; Olivier, Jaco; Botha, Johannes Reinhardt

    2018-04-01

    This study focuses on the growth of GaSb/GaAs quantum dots (QD) using an atmospheric pressure MOVPE system. For the best uncapped dots, the average dot height, base diameter and density are 5 nm, 45 nm and 4.5×1010 cm-2, respectively. Capping of GaSb QDs at high temperatures caused flattening and formation of thin inhomogeneous GaSb layer inside GaAs resulting in no obvious QD PL peak. Capping at low temperatures lead to the formation of dot-like features and a wetting layer (WL) with distinct PL peaks for QD and WL at 1097 nm and 983 nm respectively. Some of the dot-like features had voids. An increase in excitation power caused the QD and WL peaks to shift to higher energies. This is attributed to electrostatic band bending leading to triangular potential wells, typical of type-II alignment between GaAs and strained GaSb. Variable temperature PL measurements of the QD sample showed the decrease in the intensity of the WL peak to be faster than that of the QD peak as the temperature increased.

  12. The effects of electron and proton radiation on GaSb infrared solar cells

    Science.gov (United States)

    Gruenbaum, P. E.; Avery, J. E.; Fraas, L. M.

    1991-01-01

    Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

  13. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  14. Enhancement in CO2 Adsorption Capacity and Selectivity in the Chalcogenide Aerogel CuSb2S4 by Post-synthetic Modification with LiCl

    KAUST Repository

    Ahmed, Ejaz; Rothenberger, Alexander

    2015-01-01

    The new chalcogel CuSb2S4 was obtained by reacting Cu(OAc)2·H2O with KSbS2 in a water/formamide mixture at room temperature. In order to modify the gas adsorption capacity the synthesized CuSb2S4 aerogel was loaded with different amounts of LiCl. CO

  15. Programming biological models in Python using PySB.

    Science.gov (United States)

    Lopez, Carlos F; Muhlich, Jeremy L; Bachman, John A; Sorger, Peter K

    2013-01-01

    Mathematical equations are fundamental to modeling biological networks, but as networks get large and revisions frequent, it becomes difficult to manage equations directly or to combine previously developed models. Multiple simultaneous efforts to create graphical standards, rule-based languages, and integrated software workbenches aim to simplify biological modeling but none fully meets the need for transparent, extensible, and reusable models. In this paper we describe PySB, an approach in which models are not only created using programs, they are programs. PySB draws on programmatic modeling concepts from little b and ProMot, the rule-based languages BioNetGen and Kappa and the growing library of Python numerical tools. Central to PySB is a library of macros encoding familiar biochemical actions such as binding, catalysis, and polymerization, making it possible to use a high-level, action-oriented vocabulary to construct detailed models. As Python programs, PySB models leverage tools and practices from the open-source software community, substantially advancing our ability to distribute and manage the work of testing biochemical hypotheses. We illustrate these ideas using new and previously published models of apoptosis.

  16. Study of the structure and chemical bonding of crystalline Ge_4Sb_2Te_7 using first principle calculations

    International Nuclear Information System (INIS)

    Singh, Janpreet; Singh, Satvinder; Tripathi, S. K.; Singh, Gurinder; Kaura, Aman

    2016-01-01

    The atomic arrangements and chemical bonding of stable Ge_4Sb_2Te_7 (GeTe rich), a phase-change material, have been investigated by means of ab initio total energy calculations. To study the atomic arrangement, GeTe block is considered into -TeSbTeSbTe- block and -Te-Te- layer in the stacking I and II respectively. The stacking I is energetically more stable than the stacking II. The reason for more stability of the stacking I has been explained. The chemical bonding has been studied with the electronic charge density distribution around the atomic bonds. The quantity of electronic charge loosed or gained by atoms has been calculated using the Bader charge analysis. The metallic character has been studied using band structures calculations. The band gap for the stacking I and II is 0.463 and 0.219 eV respectively.

  17. Lead activity in Pb-Sb-Bi alloys

    Directory of Open Access Journals (Sweden)

    A. S. Kholkina

    2014-11-01

    Full Text Available The present work is devoted to the study of lead thermodynamic activity in the Pb-Sb-Bi alloys. The method for EMF measurements of the concentration cell: (–Pb|KCl-PbCl2¦¦KCl-PbCl2|Pb-(Sb-Bi(+ was used. The obtained concentration dependences of the galvanic cell EMF are described by linear equations. The lead activity in the ternary liquid-metal alloy demonstrates insignificant negative deviations from the behavior of ideal solutions.

  18. Investigation of structural and electrochemical properties of LaSrCo{sub 1−x}Sb{sub x}O{sub 4} (0≤x≤0.20) as potential cathode materials in intermediate-temperature solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junkai; Zhou, Jun, E-mail: zhoujun@mail.xjtu.edu.cn; Fan, Weiwei; Wang, Wendong; Wu, Kai; Cheng, Yonghong

    2017-03-15

    The structural and electrochemical properties of the layered perovskite oxides LaSrCo{sub 1−x}Sb{sub x}O{sub 4} (0≤x≤0.20) were investigated to study the effects of substituting Sb for Co for application as cathode materials in intermediate temperature solid oxide fuel cells (IT-SOFCs). The results of crystal structure analyses show the maximum content of Sb in LaSrCo{sub 1−x}Sb{sub x}O{sub 4} to be 0.05 as a pure single phase. XPS shows that Co and Sb in LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} may possess mixed-oxidation states. The electrical conductivity increased greatly after Sb substitution. An improvement in the cathode polarization (R{sub p}) values is observed from the Sb-doped sample with respect to the undoped samples. For example, R{sub p} of LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} on LSGM was observed to be 0.16 Ω cm{sup 2} at 800 °C in air. The main rate-limiting step for LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} cathode is charge transfer of oxygen atoms. These results indicate that Sb can be incorporated into LaSrCo{sub 1−x}Sb{sub x}O{sub 4} based materials and can have a beneficial effect on the performance, making them potentially suitable for use as cathode materials in IT-SOFCs. - Graphical abstract: The oxygen partial pressure dependence of polarization resistances for a new layered perovskite cathode LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} at various temperatures was measured. - Highlights: • The maximum content of Sb was 0.05 mol in LaSrCo{sub 1−x}Sb{sub x}O{sub 4}. • The maximum electrical conductivity is 194 S cm{sup −1}for LaSrCo{sub 0.95}Sb{sub 0.05}O{sub 4} at 800 °C. • A rate-limiting process of charge transfer presented.

  19. Low temperature Zn diffusion for GaSb solar cell structures fabrication

    Science.gov (United States)

    Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

    1995-01-01

    Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

  20. Nanocrystals of a new complex perovskite dielectric Ba{sub 2}TmSbO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Nair, V.M. [Department of Physics, University College, Trivandrum 695034, Kerala (India); Jose, R., E-mail: rjose@ump.edu.my [Faculty of Industrial Sciences and Technology, Universiti Malaysia Pahang, 26300 Kuantan (Malaysia); Anil Kumar, G.M. [Noritake Co Ltd, 300 Higashiyama, Miyoshi, Aichi 470-0293 (Japan); Yusoff, Mashitah M. [Faculty of Industrial Sciences and Technology, Universiti Malaysia Pahang, 26300 Kuantan (Malaysia); Wariar, P.R.S. [Department of Physics, University College, Trivandrum 695034, Kerala (India)

    2012-01-25

    Highlights: Black-Right-Pointing-Pointer A new material, Ba{sub 2}TmSbO{sub 6}, has been synthesized as nanocrystals for the first time. Black-Right-Pointing-Pointer A combustion process, characterized by a one-pot procedure, was adopted to synthesize Ba{sub 2}TmSbO{sub 6} as nanocrystals. Black-Right-Pointing-Pointer Crystal structure and dielectric properties of the Ba{sub 2}TmSbO{sub 6} have been studied and compared with similar materials. - Abstract: Nanocrystals of a new complex perovskites ceramic oxide, barium thulium antimony oxide - Ba{sub 2}TmSbO{sub 6}, were synthesized using a single step auto-ignition combustion process. The combustion product was single phase and composed of aggregates of nanocrystals of sizes in the range 20-50 nm. Ba{sub 2}TmSbO{sub 6} crystallized in cubic perovskite structure with lattice parameter, a = 8.4101 Angstrom-Sign . The polycrystalline fluffy combustion product was sintered to high density ({approx}97%) at {approx}1450 Degree-Sign C for 4 h. Resistivity of the sintered specimen was {approx}5 M{Omega}/cm. The Ba{sub 2}TmSbO{sub 6} has dielectric constant ({epsilon} Prime ) and dielectric loss (tan {delta}) of 17 and {approx}10{sup -4} at 5 MHz; the new material would probably be developed as a low-loss dielectric material.

  1. 77 FR 34073 - Manufacturer of Controlled Substances; Notice of Application; S&B Pharma, Inc.

    Science.gov (United States)

    2012-06-08

    ... DEPARTMENT OF JUSTICE Drug Enforcement Administration Manufacturer of Controlled Substances; Notice of Application; S&B Pharma, Inc. Pursuant to Sec. 1301.33(a), Title 21 of the Code of Federal Regulations (CFR), this is notice that on April 4, 2012, S&B Pharma Inc., 405 South Motor Avenue, Azusa...

  2. Structural and Magnetic Properties of Co-Mn-Sb Thin films

    Energy Technology Data Exchange (ETDEWEB)

    Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

    2009-12-17

    Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

  3. Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd

    2016-08-15

    The thin film deposition and structure of highly oriented telluride compounds is of particular interest for phase-change applications in next-generation non-volatile memory such as heterostructure designs, as well as for the investigation of novel optical, thermoelectric and ferroelectric properties in layered telluride compounds. In this work, epitaxial Ge-Sb-Te thin films were successfully produced by pulsed laser deposition on silicon with and without amorphous SiO{sub x} interlayer at elevated process temperatures from a Ge{sub 2}Sb{sub 2}Te{sub 5} target. Aberration-corrected high-resolution scanning transmission electron microscopy (STEM) imaging reveals a distinct interface configuration of the trigonal phase connected by a quasi van der Waals gap (vacancy) to the Sb/Te-passivated single crystalline Si substrate, yet also an intermediate textured growth regime in which the substrate symmetry is only weakly coupled to the thin film orientation, as well as strong deviation of composition at high deposition temperatures. Textured growth of Ge-Sb-Te thin film was also observed on SiO{sub x}/Si substrate with no evidence of an intermediate Sb/Te surface layer on top of an SiO{sub x} layer. In addition, particular defect structures formed by local reorganization of the stacking sequence across the vacancy gap are observed and appear to be intrinsic to these van der Waals-layered compounds. Theoretical image simulations of preferred stacking sequences can be matched to individual building blocks in the Ge-Sb-Te grain. - Highlights: • Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films. • Changing of overall composition with increasing deposition temperature. • Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface. • The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.

  4. Theoretical investigation of the vortex state in new superconductors: MgB2 and PrOs4Sb12

    International Nuclear Information System (INIS)

    Dao, V.H.

    2006-01-01

    As illustrated by the present thesis work, gap function anisotropy and crystal anisotropy are combined when influencing superconducting properties under a magnetic field. In order to study the mixed state of the recently discovered multiband superconductor MgB 2 , we first derive the Ginzburg-Landau functional for a two-gap superconductor from a weak coupling BCS model. The interaction between the two condensates is then described by a unique Josephson-type coupling. The two-gap theory then enables to explain the curvature and the anisotropy of the upper critical field, as well as the 30 degrees change of orientation for the vortex lattice which is observed when increasing the strength of the magnetic field applied along the c-tilde axis. Besides, we investigate the vortex lattice geometry in the superconducting heavy fermion PrOs 4 Sb 12 . When taking into account non local corrections for an s-wave T h -tetrahedral superconductor, we can explain the observed deformation of the lattice by the crystal symmetry of the compound. Ab initio results of the band structures confirm quantitatively our analysis. (author)

  5. Simultaneous speciation and preservation of aqueous As, Sb and Se redox couples

    Science.gov (United States)

    Wu, D.; Pichler, T.

    2014-12-01

    We developed a new method for the simultaneous speciation analysis of inorganic arsenic (III, V), antimony (III, V) and selenium (IV, VI) in water samples via double-focusing sector field-inductively coupled plasma-mass spectrometry (SF-ICP-MS) coupled to high performance liquid chromatography (HPLC). A Hamilton PRX-X100 anion exchange column with EDTA (pH of 4.7) and 3% methanol as mobile phase was used for species separation. The flow rate was set to 1.5 mL min-1 and a solvent gradient (linear ramp from 5 mM to 30 mM) was applied. The overall analysis time for all six desired species was 11 minutes. The detection limits for As(III), As(V), Sb(III), Sb(V), Se(VI) and Se(IV) were 0.02 μg L-1, 0.06 μg L-1, 0.2 μg L-1, 0.02 μg L-1, 0.2 μg L-1 and 0.4 μg L-1 respectively. The retention times for As(III), As(V), Sb(III), Sb(V), Se(IV) and Se(VI) were 1.70, 2.94, 7.14, 2.28, 3.38 and 9.36 min, respectively. Subsequently, the stability of inorganic As(III, V), Sb(III, V) and Se(IV, VI) species in different water samples (groundwater, lake water and river water) was studied over a time scale of 11 weeks. High concentrations of Fe (25.0 mg/L) and Mn (25.0 mg/L) were added to different matrices to simulate Fe and Mn rich environments. All samples were spiked with 5.0 μg/L As(III, V) and Sb(III, V) and 15.0 μg/L Se(IV, VI).. We investigated several strategies for species preservation, i.e., EDTA only, EDTA combined with acidification (HCl, HNO3, formic acid and acetic acid). The preserved samples were stored at 4 °C in the dark. For comparison, another subsample without any preservation was stored at room temperature in the presence of light. The results showed that a combination EDTA acidified to pH of 3 can be used to preserve all species for at least 11 weeks. While EDTA only (pH = 6) failed to preserve As and Sb species, although Se species were preserved.

  6. Evaluation of the novel 5-HT4 receptor PET ligand [11C]SB207145 in the Gottingen minipig

    DEFF Research Database (Denmark)

    Kornum, B.R.; Lind, N.M.; Gillings, N.

    2009-01-01

    This study investigates 5-hydroxytryptamine 4 (5-HT(4)) receptor binding in the minipig brain with positron emission tomography (PET), tissue homogenate-binding assays, and autoradiography in vitro. The cerebral uptake and binding of the novel 5-HT(4) receptor radioligand [(11)C]SB207145 in vivo...... was modelled and the outcome compared with postmortem receptor binding. Different models for quantification of [(11)C]SB207145 binding were evaluated: One-tissue and two-tissue compartment kinetic modelling, Logan arterial input, and three different reference tissue models. We report that the pig...... model provides stable and precise estimates of the binding potential in all regions. The binding potentials calculated for striatum, midbrain, and cortex from the PET data were highly correlated with 5-HT(4) receptor concentrations determined in brain homogenates from the same regions, except...

  7. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-01-01

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

  8. New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current.

    Science.gov (United States)

    Park, Yong-Jin; Cho, Ju-Young; Jeong, Min-Woo; Na, Sekwon; Joo, Young-Chang

    2016-02-23

    The novel discovery of a current-induced transition from insulator to metal in the crystalline phase of Ge2Sb2Te5 and GeSb4Te7 have been studied by means of a model using line-patterned samples. The resistivity of cubic phase Ge-Sb-Te compound was reduced by an electrical current (~1 MA/cm(2)), and the final resistivity was determined based on the stress current density, regardless of the initial resistivity and temperature, which indicates that the conductivity of Ge-Sb-Te compound can be modulated by an electrical current. The minimum resistivity of Ge-Sb-Te materials can be achieved at high kinetic rates by applying an electrical current, and the material properties change from insulating to metallic behavior without a phase transition. The current-induced metal transition is more effective in GeSb4Te7 than Ge2Sb2Te5, which depends on the intrinsic vacancy of materials. Electromigration, which is the migration of atoms induced by a momentum transfer from charge carriers, can easily promote the rearrangement of vacancies in the cubic phase of Ge-Sb-Te compound. This behavior differs significantly from thermal annealing, which accompanies a phase transition to the hexagonal phase. This result suggests a new pathway for modulating the electrical conductivity and material properties of chalcogenide materials by applying an electrical current.

  9. High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

    International Nuclear Information System (INIS)

    Sirohi, Anshu; Saha, Preetha; Gayen, Sirshendu; Gaurav, Abhishek; Jyotsna, Shubhra; Sheet, Goutam; Singh, Chandan K.; Kabir, Mukul; Thakur, Gohil S.; Haque, Zeba; Gupta, L. C.; Ganguli, Ashok K.

    2016-01-01

    CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high (∼47%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane are strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb.

  10. High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

    Energy Technology Data Exchange (ETDEWEB)

    Sirohi, Anshu; Saha, Preetha; Gayen, Sirshendu; Gaurav, Abhishek; Jyotsna, Shubhra; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli PO 140306 (India); Singh, Chandan K.; Kabir, Mukul [Department of Physics, Indian Institute of Science Education and Research, Pune 411008 (India); Thakur, Gohil S.; Haque, Zeba; Gupta, L. C. [Department of Chemistry, Indian Institute of Technology, New Delhi 110016 (India); Ganguli, Ashok K. [Department of Chemistry, Indian Institute of Technology, New Delhi 110016 (India); Institute of Nano Science & Technology, Mohali 160064 (India)

    2016-06-13

    CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high (∼47%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane are strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb.

  11. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  12. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

    Science.gov (United States)

    Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

    2018-05-01

    In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

  13. Bismuth-induced restructuring of the GaSb(110) surface

    DEFF Research Database (Denmark)

    Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

    1998-01-01

    The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction...

  14. Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Timm, R.

    2007-12-14

    In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

  15. Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

    2013-10-01

    Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

  16. Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

    Science.gov (United States)

    Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

    2017-02-10

    The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories

  17. Binuclear model of an Sb-galaxy

    International Nuclear Information System (INIS)

    Nezhinskij, E.M.

    1980-01-01

    To explain the causes of origin of the observed peculiarities of SB-galaxies a self-consistent stable model of an Sb-galaxy is constructed. The evolutionary scheme of origin of this model is described. The model consists of an extensive spherical corona, of two point nuclei and of a cloud of particles of infinitely small mass, the latter being bar-shaped and situated in the neighbourhood of the nuclei. The model has the following properties: the nuclei move along the circular orbit, whose centre coincides with that of the corona; the motion of the particles of the bar-shaped cloud is stable in the sense of Hill [ru

  18. Cathodoluminescence study of ytterbium doped GaSb

    International Nuclear Information System (INIS)

    Hidalgo, P.; Mendez, B.; Ruiz, C.; Bermudez, V.; Piqueras, J.; Dieguez, E.

    2005-01-01

    Yb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb 3+ ions has been detected

  19. Sb{sub 2}S{sub 3}:C/CdS p-n junction by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Arato, A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Cardenas, E. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); O' Brien, J.J.; Liu, J. [Center for Nanoscience, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Department of Chemistry and Biochemistry, University of Missouri-St. Louis, One University Boulevard, St. Louis, Missouri-63121 (United States); Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia-Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)], E-mail: bkrishnan@fime.uanl.mx

    2009-02-02

    In this paper, we report laser irradiated carbon doping of Sb{sub 2}S{sub 3} thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb{sub 2}S{sub 3} thin films of approximately 0.5 {mu}m in thickness. Sb{sub 2}S{sub 3} thin films were prepared from a solution containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3} at 27 deg. C for 5 h and the films obtained were highly resistive. These C/Sb{sub 2}S{sub 3} thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb{sub 2} S{sub 3}:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb{sub 2}S{sub 3}:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl{sub 2}, sodium citrate, NH{sub 4}OH and thiourea at 70 deg. C . On the CdS film, Sb{sub 2}S{sub 3}/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb{sub 2}S{sub 3} side facing the beam. The p-n junction formed by p-Sb{sub 2}S{sub 3}:C and n-type CdS showed V{sub oc} = 500 mV and J{sub sc} = 0.5 mA/cm{sup 2} under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.

  20. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

    International Nuclear Information System (INIS)

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-01-01

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  1. Preparation of PtSnSb/C electrocatalizers for the electro-oxidation of the ethanol; Preparacao de eletrocatalizadores PtSnSb/C para a eletrooxidacao do etanol

    Energy Technology Data Exchange (ETDEWEB)

    Tusi, M.M.; Ayoub, J.M.S.; Costa, T.C.; Spinace, E.V.; Neto, A.O., E-mail: aolivei@ipen.b, E-mail: espinace@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2010-07-01

    PtSn/C (Pt:Sn atomic ratio of 50:50) and PtSnSb/C (Pt:Sn:Sb atomic ratio of 50:45:05, 50:40:10 and 50:10:40) electrocatalysts were prepared (20 wt% metal loading) by an alcohol-reduction process using ethylene glycol as reducing agent, H{sub 2}PtCl{sub 6}.6H{sub 2}O, SnCl{sub 2}.H{sub 2}O and Sb(OOCCH{sub 3}){sub 3} and carbon Vulcan XC72 as support. The obtained materials were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and chronoamperometry. The PtSnSb/C (50:45:05) prepared by an alcohol-reduction process showed the best performance for ethanol electro-oxidation compared to the others catalysts. (author)

  2. Hydrazine-hydrothermal syntheses, characterizations and photoelectrochemical properties of two quaternary chalcogenidoantimonates(III) BaCuSbQ{sub 3} (Q = S, Se)

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chang; Hou, Peipei [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chai, Wenxiang [College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Tian, Jiawei; Zheng, Xuerong; Shen, Yaying; Zhi, Mingjia; Zhou, Chunmei [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Liu, Yi, E-mail: liuyimse@zju.edu.cn [State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-09-15

    Two isostructural quaternary chalcogenidoantimonates(III) BaCuSbQ{sub 3} (Q = S, Se): BaCuSbS{sub 3} (1) and BaCuSbSe{sub 3} (2) have been successfully synthesized through a facile hydrazine-hydrothermal method. Both two compounds crystallize in the orthorhombic space group and feature a three-dimensional (3D) channeled [Cu{sub 2}Sb{sub 2}Q{sub 6}]{sup 4-} framework, which is constructed by the distorted tetrahedral CuQ{sub 4} and pyramid SbQ{sub 3} units via vertex sharing. Both optical properties and theoretical studies show 1 and 2 are semiconductors with narrow band gaps. In addition, their photoelectrochemical properties have been investigated. - Highlights: • BaCuSbQ{sub 3} (Q = S, Se) were synthesized through a hydrazine-hydrothermal method. • BaCuSbQ{sub 3} (Q = S, Se) feature a 3D framework by single-crystal X-ray diffraction. • Experimental and theoretical studies confirm BaCuSbQ{sub 3} (Q = S, Se) are semiconductors. • Photoelectrochemical properties of BaCuSbQ{sub 3} (Q = S, Se) have been investigated.

  3. First observation of 109Te β+ and electron capture decay to levels of 109Sb

    International Nuclear Information System (INIS)

    Ressler, J.J.; Walters, W.B.; Shergur, J.; Davids, C.N.; Heinz, A.; Seweryniak, D.; Dean, D.J.; Hjorth-Jensen, M.

    2002-01-01

    Low-spin levels in 109 Sb populated by 109 Te beta decay are reported for the first time. Seven new levels are proposed, two below 1 MeV excitation energy. Spins and parities of (1/2 + ) and (3/2 + ,5/2 + ) are suggested for the low energy levels by comparison to beta feeding intensities and systematics. These results are compared with new calculated levels for 109 Sb

  4. Monte Carlo study of the magnetic properties of GdSb alloys

    Energy Technology Data Exchange (ETDEWEB)

    Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Sidi Bouzid, Safi, BP, 46000 63 (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Av. Ibn Batouta, B.P. 1014, Rabat (Morocco); Bahmad, L. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Av. Ibn Batouta, B.P. 1014, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Layers and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Av. Ibn Batouta, B.P. 1014, Rabat (Morocco); Institute of Layers and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco)

    2014-03-15

    The magnetic properties of antiferromagnetic GdSb layers have been studied using Monte Carlo simulations within the Ising model framework. The considered Hamiltonian includes first nearest-neighbor, an external magnetic field and a crystal field. The thermal magnetizations and magnetic susceptibilities are computed for a fixed size. In addition, the Néel temperature is deduced. The magnetization versus the exchange interactions and crystal field are studied for a fixed system size, N=5, 7 and 9 sites. The magnetic hysteresis cycle versus temperature is also established. - Highlights: • Determination of the Néel temperature of GdSb by MC simulations. • Magnetic hysteresis cycle of GdSb. • Determination of saturation magnetization and field coercive in GdSb.

  5. Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

    International Nuclear Information System (INIS)

    Lu, Pengfei; Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia; Wang, Shumin

    2014-01-01

    Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb) 2 (Te,Se) 3 compound. -- Abstract: The quaternary (Bi,Sb) 2 (Te,Se) 3 compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data

  6. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Zhang Xu; Rao Feng; Liu Bo; Peng Cheng; Zhou Xilin; Yao Dongning; Guo Xiaohui; Song Sannian; Wang Liangyong; Cheng Yan; Wu Liangcai; Song Zhitang; Feng Songlin

    2012-01-01

    The dry etching characteristic of Al 1.3 Sb 3 Te film was investigated by using a CF 4 /Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF 4 /Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al 1.3 Sb 3 Te thin films was investigated as a function of the CF 4 /Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF 4 concentration of 4%, power of 300 W and pressure of 80 mTorr.

  7. Decays of 116Sb isomers to levels in 116Sn

    International Nuclear Information System (INIS)

    Gacsi, Z.; Raman, S.

    1994-01-01

    The excited states of 116 Sn were studied by means of the decays of the 15.8-min, 3 + 116 Sb ground state, and the 60.3-min, 8 - 116 Sb isomer. Over 50 γ rays were observed; these were incorporated into a level scheme consisting of 32 excited states. Except for one new level proposed at 3.986 MeV, the current study fully supports an exhaustive study of levels in 116 Sn reported earlier. The previous study was an attempt to develop a nearly ''complete'' level scheme of 116 Sn up to an excitation energy of 4.3 MeV

  8. Preclinical and first clinical experience with the gastrin-releasing peptide receptor-antagonist [68Ga]SB3 and PET/CT

    International Nuclear Information System (INIS)

    Maina, Theodosia; Charalambidis, David; Nock, Berthold A.; Bergsma, Hendrik; Krenning, Eric P.; Kulkarni, Harshad R.; Mueller, Dirk; Baum, Richard P.; Jong, Marion de

    2016-01-01

    Gastrin-releasing peptide receptors (GRPR) represent attractive targets for tumor diagnosis and therapy because of their overexpression in major human cancers. Internalizing GRPR agonists were initially proposed for prolonged lesion retention, but a shift of paradigm to GRPR antagonists has recently been made. Surprisingly, radioantagonists, such as [ 99m Tc]DB1 ( 99m Tc-N 4 '-DPhe 6 ,Leu-NHEt 13 BBN(6-13)), displayed better pharmacokinetics than radioagonists, in addition to their higher inherent biosafety. We introduce here [ 68 Ga]SB3, a [ 99m Tc]DB1 mimic-carrying, instead of the 99m Tc-binding tetraamine, the chelator DOTA for labeling with the PET radiometal 68 Ga. Competition binding assays of SB3 and [ nat Ga]SB3 were conducted against [ 125 I-Tyr 4 ]BBN in PC-3 cell membranes. Blood samples collected 5 min postinjection (pi) of the [ 67 Ga]SB3 surrogate in mice were analyzed using high-performance liquid chromatography (HPLC) for degradation products. Likewise, biodistribution was performed after injection of [ 67 Ga]SB3 (37 kBq, 100 μL, 10 pmol peptide) in severe combined immunodeficiency (SCID) mice bearing PC-3 xenografts. Eventually, [ 68 Ga]SB3 (283 ± 91 MBq, 23 ± 7 nmol) was injected into 17 patients with breast (8) and prostate (9) cancer. All patients had disseminated disease and had received previous therapies. PET/CT fusion images were acquired 60-115 min pi. SB3 and [ nat Ga]SB3 bound to the human GRPR with high affinity (IC 50 : 4.6 ± 0.5 nM and 1.5 ± 0.3 nM, respectively). [ 67 Ga]SB3 displayed good in vivo stability (>85 % intact at 5 min pi). [ 67 Ga]SB3 showed high, GRPR-specific and prolonged retention in PC-3 xenografts (33.1 ± 3.9%ID/g at 1 h pi - 27.0 ± 0.9%ID/g at 24 h pi), but much faster clearance from the GRPR-rich pancreas (∼160%ID/g at 1 h pi to <17%ID/g at 24 h pi) in mice. In patients, [ 68 Ga]SB3 elicited no adverse effects and clearly visualized cancer lesions. Thus, 4 out of 8 (50 %) breast cancer and 5 out of 9

  9. Ternary CaCu{sub 4}P{sub 2}-type pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada)

    2012-08-15

    Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{sub 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.

  10. Nanostructured 3D-porous graphene hydrogel based Ti/Sb-SnO2-Gr electrode with enhanced electrocatalytic activity.

    Science.gov (United States)

    Asim, Sumreen; Zhu, Yunqing; Rana, Masud; Yin, Jiao; Shah, Muhammad Wajid; Li, Yingxuan; Wang, Chuanyi

    2017-02-01

    Nanostructured highly porous 3D-Ti/Sb-SnO 2 -Gr electrode, based on 3D porous graphene hydrogel was fabricated via a fast-evaporation technique through layer by layer (LBL) deposition. The 3D pores are uniformly distributed on the high fidelity of substrate with pore sizes of 7-12 nm, as confirmed by SEM analysis. Compared to Ti/Sb-SnO 2 electrode, the fabricated 3D porous electrode possesses high oxygen evolution potential (2.40 V), smaller charge transfer resistance (29.40 Ω cm -2 ), higher porosity (0.90), enhanced roughness factor (181), and larger voltammetric charge value (57.4 mC cm -2 ). Electrocatalytic oxidation of Rhodamine B (RhB) was employed to evaluate the efficiency of the fabricated 3D-Ti/Sb-SnO 2 -Gr anode. The results show that the electrochemical reaction follows pseudo first order kinetics with rate constant (k) value of 4.93 × 10 -2 min -1 , which is about 3.91 times higher compared to flat Ti/Sb-SnO 2 . The fabricated electrode demonstrates better stability and low specific energy consumption signifying its potential usage in electrocatalysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. Direct synthesis of Sb{sub 2}O{sub 3} nanoparticles via hydrolysis-precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yuehua [Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083 (China); Zhang, Huihui [Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083 (China); Yang, Huaming [Department of Inorganic Materials, School of Resources Processing and Bioengineering, Central South University, Changsha 410083 (China)]. E-mail: hmyang@mail.csu.edu.cn

    2007-01-31

    Antimony oxide (Sb{sub 2}O{sub 3}) has wide applications as conductive materials, effective catalyst, functional filler and optical materials. Nanocrystalline Sb{sub 2}O{sub 3} has been successfully synthesized by hydrolysis-precipitation method. The samples were characterized by means of transmission electron microscopy (TEM), high-resolution TEM (HRTEM) images, X-ray diffraction (XRD) and differential thermal analysis (DTA). The average crystal size of the Sb{sub 2}O{sub 3} nanoparticles increases with increasing the reaction temperature. TEM image of the as-synthesized nanocrystalline Sb{sub 2}O{sub 3} shows rod-like structure. HRTEM images indicate a preferred directional growth of the Sb{sub 2}O{sub 3} nanoparticles. The electrochemical behaviors of Sb{sub 2}O{sub 3} electrodes have been primarily investigated by cyclic voltammetry (CV) in lithium hexafluorophosphate (LiPF{sub 6}) solution. Sb{sub 2}O{sub 3} nanocrystallite phase has prominent effect on the electrochemical properties. The results indicate that nanocrystalline Sb{sub 2}O{sub 3} synthesized by hydrolysis-precipitation method shows potential application in the field of the electrode materials.

  12. Tunable surface wettability and water adhesion of Sb2S3 micro-/nanorod films

    International Nuclear Information System (INIS)

    Zhong, Xin; Zhao, Huiping; Yang, Hao; Liu, Yunling; Yan, Guoping; Chen, Rong

    2014-01-01

    Antimony sulfide (Sb 2 S 3 ) films were successfully prepared by spin coating Sb 2 S 3 micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb 2 S 3 micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb 2 S 3 films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb 2 S 3 micro-/nanorod. Sb 2 S 3 film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb 2 S 3 film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb 2 S 3 films.

  13. Processing and characterization of new oxy-sulfo-telluride glasses in the Ge-Sb-Te-S-O system

    International Nuclear Information System (INIS)

    Smith, C.; Jackson, J.; Petit, L.; Rivero-Baleine, C.; Richardson, K.

    2010-01-01

    New oxy-sulfo-telluride glasses have been prepared in the Ge-Sb-Te-S-O system employing a two-step melting process which involves the processing of a chalcogenide glass (ChG) and subsequent melting with TeO 2 or Sb 2 O 3 . The progressive incorporation of O at the expense of S was found to increase the density and the glass transition temperature and to decrease the molar volume of the investigated oxy-sulfo-telluride glasses. We also observed a shift of the vis-NIR cut-off wavelength to longer wavelength probably due to changes in Sb coordination within the glass matrix and overall matrix polarizability. Using Raman spectroscopy, correlations have been shown between the formation of Ge- and Sb-based oxysulfide structural units and the S/O ratio. Lastly, two glasses with similar composition (Ge 20 Sb 6 S 64 Te 3 O 7 ) processed by melting the Ge 23 Sb 7 S 70 glass with TeO 2 or the Ge 23 Sb 2 S 72 Te 4 glass with Sb 2 O 3 were found to have slightly different physical, thermal, optical and structural properties. These changes are thought to result mainly from the higher moisture content and sensitivity of the TeO 2 starting materials as compared to that of the Sb 2 O 3 . - Graphical abstract: In this paper, we discuss our most recent findings on the processing and characterization of new ChG glasses prepared with small levels of Te, melted either with TeO 2 or Sb 2 O 3 powders. We explain how these new oxy-sulfo-telluride glasses are prepared and we correlate the physical, thermal and optical properties of the investigated glasses to the structure changes induced by the addition of oxygen in the Ge-Sb-S-Te glass network.

  14. Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

    Science.gov (United States)

    Kunrugsa, Maetee

    2018-06-01

    Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

  15. The Osmium(VIII) Oxofluoro Cations OsO(2)F(3)(+) and F(cis-OsO(2)F(3))(2)(+): Syntheses, Characterization by (19)F NMR Spectroscopy and Raman Spectroscopy, X-ray Crystal Structure of F(cis-OsO(2)F(3))(2)(+)Sb(2)F(11)(-), and Density Functional Theory Calculations of OsO(2)F(3)(+), ReO(2)F(3), and F(cis-OsO(2)F(3))(2)(+).

    Science.gov (United States)

    Casteel, William J.; Dixon, David A.; Mercier, Hélène P. A.; Schrobilgen, Gary J.

    1996-07-17

    Osmium dioxide tetrafluoride, cis-OsO(2)F(4), reacts with the strong fluoride ion acceptors AsF(5) and SbF(5) in anhydrous HF and SbF(5) solutions to form orange salts. Raman spectra are consistent with the formation of the fluorine-bridged diosmium cation F(cis-OsO(2)F(3))(2)(+), as the AsF(6)(-) and Sb(2)F(11)(-) salts, respectively. The (19)F NMR spectra of the salts in HF solution are exchange-averaged singlets occurring at higher frequency than those of the fluorine environments of cis-OsO(2)F(4). The F(cis-OsO(2)F(3))(2)(+)Sb(2)F(11)(-) salt crystallizes in the orthorhombic space group Imma. At -107 degrees C, a = 12.838(3) Å, b = 10.667(2) Å, c = 11.323(2) Å, V = 1550.7(8) Å(3), and Z = 4. Refinement converged with R = 0.0469 [R(w) = 0.0500]. The crystal structure consists of discrete fluorine-bridged F(cis-OsO(2)F(3))(2)(+) and Sb(2)F(11)(-) ions in which the fluorine bridge of the F(cis-OsO(2)F(3))(2)(+) cation is trans to an oxygen atom (Os-O 1.676 Å) of each OsO(2)F(3) group. The angle at the bridge is 155.2(8) degrees with a bridging Os---F(b) distance of 2.086(3) Å. Two terminal fluorine atoms (Os-F 1.821 Å) are cis to the two oxygen atoms (Os-O 1.750 Å), and two terminal fluorine atoms of the OsO(2)F(3) group are trans to one another (1.813 Å). The OsO(2)F(3)(+) cation was characterized by (19)F NMR and by Raman spectroscopy in neat SbF(5) solution but was not isolable in the solid state. The NMR and Raman spectroscopic findings are consistent with a trigonal bipyramidal cation in which the oxygen atoms and a fluorine atom occupy the equatorial plane and two fluorine atoms are in axial positions. Density functional theory calculations show that the crystallographic structure of F(cis-OsO(2)F(3))(2)(+) is the energy-minimized structure and the energy-minimized structures of the OsO(2)F(3)(+) cation and ReO(2)F(3) are trigonal bipyramidal having C(2)(v)() point symmetry. Attempts to prepare the OsOF(5)(+) cation by oxidative fluorination of cis

  16. Enhanced photovoltaic performance of Sb2S3-sensitized solar cells through surface treatments

    Science.gov (United States)

    Ye, Qing; Xu, Yafeng; Chen, Wenyong; Yang, Shangfeng; Zhu, Jun; Weng, Jian

    2018-05-01

    Efficient antimony sulfide (Sb2S3)-sensitized solar cells were obtained by a sequential treatment with thioacetamide (TA) and 1-decylphosphonic acid (DPA). Compared with the untreated Sb2S3-sensitized solar cells, the power conversion efficiency of the treated Sb2S3 solar cells was improved by 1.80% to 3.23%. The TA treatment improved the Sb2S3 films by reducing impurities and decreasing the film's surface defects, which inhibited the emergence of recombination centers. The DPA treatment reduced the recombination between hole transport materials (HTMs) and the Sb2S3. Therefore, we have presented an efficient strategy to improve the performance of Sb2S3-sensitized solar cells.

  17. Commensurate-commensurate magnetic phase transitions in CeSb

    DEFF Research Database (Denmark)

    Lebech, Bente; Broholm, C.; Clausen, K.

    1986-01-01

    The q=2/3 to q=4/7 commensurate-commensurate phase transition in CeSb has been studied by neutron diffraction. On cooling the commensurate wave vector q changes abruptly from 2/3 to a higher-order commensurate value (≈14/23) at T1

  18. Fluorometric and molecular docking investigation on the binding characteristics of SB202190 to human serum albumin

    International Nuclear Information System (INIS)

    Nasruddin, Ahmad N.; Feroz, Shevin R.; Mukarram, Abdul K.; Mohamad, Saharuddin B.; Tayyab, Saad

    2016-01-01

    The interaction of SB202190, a p38 mitogen-activated protein kinase inhibitor with the main drug transporter in human circulation, human serum albumin (HSA) was studied using fluorescence spectroscopy and in silico docking methods. The association constant, K a of the binding reaction was determined to be 3.24±0.07×10 4 M −1 at 25 °C based on fluorescence quenching titration results. The values of enthalpy change and entropy change for the interaction were found as −8.54 kJ mol −1 and 58.01 J mol −1 K −1 , respectively. Both thermodynamic data and docking results suggested the involvement of hydrophobic and van der Waals forces in the complex formation. Three-dimensional fluorescence data of SB202190–HSA complex demonstrated significant changes in the microenvironment around the protein fluorophores upon drug binding. Comparison of HSA thermograms obtained in the absence and the presence of SB202190 suggested improved protein thermal stability upon complexation with the drug. Competitive drug displacement results as well as modeling data concluded the preferred binding site of SB202190 on HSA as Sudlow's site I. - Highlights: • SB202190 interacts with HSA with moderate affinity. • Involvement of hydrophobic and van der Waals forces in SB202190 binding. • SB202190 binding results in microenvironmental changes around fluorophores. • Sudlow's site I is the preferred binding site of SB202190.

  19. Fluorometric and molecular docking investigation on the binding characteristics of SB202190 to human serum albumin

    Energy Technology Data Exchange (ETDEWEB)

    Nasruddin, Ahmad N.; Feroz, Shevin R. [Biomolecular Research Group, Biochemistry Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Mukarram, Abdul K. [Bioinformatics Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Mohamad, Saharuddin B. [Bioinformatics Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Centre of Research for Computational Sciences and Informatics for Biology, Bioindustry, Environment, Agriculture and Healthcare, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tayyab, Saad, E-mail: saadtayyab2004@yahoo.com [Biomolecular Research Group, Biochemistry Programme, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Centre of Research for Computational Sciences and Informatics for Biology, Bioindustry, Environment, Agriculture and Healthcare, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-06-15

    The interaction of SB202190, a p38 mitogen-activated protein kinase inhibitor with the main drug transporter in human circulation, human serum albumin (HSA) was studied using fluorescence spectroscopy and in silico docking methods. The association constant, K{sub a} of the binding reaction was determined to be 3.24±0.07×10{sup 4} M{sup −1} at 25 °C based on fluorescence quenching titration results. The values of enthalpy change and entropy change for the interaction were found as −8.54 kJ mol{sup −1} and 58.01 J mol{sup −1} K{sup −1}, respectively. Both thermodynamic data and docking results suggested the involvement of hydrophobic and van der Waals forces in the complex formation. Three-dimensional fluorescence data of SB202190–HSA complex demonstrated significant changes in the microenvironment around the protein fluorophores upon drug binding. Comparison of HSA thermograms obtained in the absence and the presence of SB202190 suggested improved protein thermal stability upon complexation with the drug. Competitive drug displacement results as well as modeling data concluded the preferred binding site of SB202190 on HSA as Sudlow's site I. - Highlights: • SB202190 interacts with HSA with moderate affinity. • Involvement of hydrophobic and van der Waals forces in SB202190 binding. • SB202190 binding results in microenvironmental changes around fluorophores. • Sudlow's site I is the preferred binding site of SB202190.

  20. Treatment of air pollution control residues with iron rich waste sulfuric acid: does it work for antimony (Sb)?

    Science.gov (United States)

    Okkenhaug, Gudny; Breedveld, Gijs D; Kirkeng, Terje; Lægreid, Marit; Mæhlum, Trond; Mulder, Jan

    2013-03-15

    Antimony (Sb) in air pollution control (APC) residues from municipal solid waste incineration has gained increased focus due to strict Sb leaching limits set by the EU landfill directive. Here we study the chemical speciation and solubility of Sb at the APC treatment facility NOAH Langøya (Norway), where iron (Fe)-rich sulfuric acid (∼3.6M, 2.3% Fe(II)), a waste product from the industrial extraction of ilmenite, is used for neutralization. Antimony in water extracts of untreated APC residues occurred exclusively as pentavalent antimonate, even at low pH and Eh values. The Sb solubility increased substantially at pH<10, possibly due to the dissolution of ettringite (at alkaline pH) or calcium (Ca)-antimonate. Treated APC residues, stored anoxically in the laboratory, simulating the conditions at the NOAH Langøya landfill, gave rise to decreasing concentrations of Sb in porewater, occurring exclusively as Sb(V). Concentrations of Sb decreased from 87-918μgL(-1) (day 3) to 18-69μgL(-1) (day 600). We hypothesize that an initial sorption of Sb to Fe(II)-Fe(III) hydroxides (green rust) and eventually precipitation of Ca- and Fe-antimonates (tripuhyite; FeSbO4) occurred. We conclude that Fe-rich, sulfuric acid waste is efficient to immobilize Sb in APC residues from waste incineration. Copyright © 2013 Elsevier B.V. All rights reserved.

  1. Synthesis, crystal structure, and magnetic properties of quaternary iron selenides: Ba{sub 2}FePnSe{sub 5} (Pn=Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jian; Greenfield, Joshua T.; Kovnir, Kirill

    2016-10-15

    Two new barium iron pnictide–selenides, Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5}, were synthesized by a high-temperature solid-state route and their crystal structures were determined using single crystal X-ray diffraction. Both compounds are isomorphic to the high pressure phase Ba{sub 3}FeS{sub 5} and crystallize in the orthorhombic space group Pnma (No. 62) with cell parameters of a=12.603(2)/12.619(2) Å, b=9.106(1)/9.183(1) Å, c=9.145(1)/9.123(1) Å and Z=4 for Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5}, respectively. According to differential scanning calorimetry, Ba{sub 2}FePnSe{sub 5} compounds exhibit high thermal stability and melt congruently at 1055(5) K (Pn=Sb) and 1105(5) K (Pn=Bi). Magnetic characterizations reveal strong antiferromagnetic nearest-neighbor interactions in both compounds resulting in an antiferromagnetic ordering at 58(1) K for Ba{sub 2}FeSbSe{sub 5} and 79(2) K for Ba{sub 2}FeBiSe{sub 5}. The magnetic interactions between Fe{sup 3+} centers, which are at least 6 Å apart from each other, are mediated by superexchange interactions. - Graphical abstract: In Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5} the magnetic interactions between Fe{sup 3+} centers, which are at least 6 Å apart from each other, are mediated by superexchange interactions. - Highlights: • New compounds Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5} have been synthesized. • The crystal structure was determined by single crystal X-ray diffraction. • Both compounds melt congruently at temperatures above 1000 K. • Ba{sub 2}FeSbSe{sub 5} and Ba{sub 2}FeBiSe{sub 5} exhibit AFM ordering at 58 K (Sb) and 70 K (Bi). • Magnetic exchange between Fe{sup 3+} is mediated by either Se–Sb(Bi)–Se or Se–Ba–Se bridges.

  2. Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

    International Nuclear Information System (INIS)

    Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

    2010-01-01

    Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

  3. AgLnSb/sub 2/O/sub 7/ compounds with weberite structure

    Energy Technology Data Exchange (ETDEWEB)

    Lopatin, S S; Aver' yanova, L N; Belyaev, I N; Zvyagintsev, B I; Dyatlov, Eh V [Rostovskij-na-Donu Gosudarstvennyj Univ. (USSR)

    1982-11-01

    The interaction between AgSbO/sub 3/ and LnSbO/sub 4/ in the solid phase at 1100-1150 deg C has been investigated. AgLnSb/sub 2/O/sub 7/ compounds with weberite crystal structure are formed in Ln=La, Pr, Nd, Sm cases but in Ln=Eu, Cd, Dy, Er cases the formation of termary oxides of the indicated composition has not been observed. Inasmuch as compounds of the general formula A/sub 2/B/sub 2/O/sub 7/ with average cation radii Rsub(B) >0.60 A and 1.65 <= Rsub(A)/Rsub(B) <= 2.20 can crystallize in weberite, pyrochlore and laminated perovskite-like structurer, conditions of the existence of the above mentioned structures depending on A and B dimensions and electronegativity are discussed.

  4. Structural instability and photoacoustic study of AlSb prepared by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Triches, D.M.; Souza, S.M.; Poffo, C.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fsc.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

    2010-09-03

    High-purity elemental Al and Sb powders were blended with equiatomic composition and submitted to mechanical alloying. For all milling times, the milled powders showed a mixture of AlSb and elemental Sb. The largest amount of AlSb was reached for milling times between 7 and 10 h. For milling times larger than 10 h, decomposition of AlSb was observed. The volume fractions of the crystalline and interfacial components were estimated using the X-ray diffraction pattern of a sample milled for 10 h. Photoacoustic absorption spectroscopy (PAS) was used to determine the thermal diffusivity and other heat transport parameters in the same sample. A combination of XRD and PAS data was used to estimate the thermal diffusivity of the interfacial component, which has a significant contribution to the thermal diffusivity of the sample.

  5. Structural instability and photoacoustic study of AlSb prepared by mechanical alloying

    International Nuclear Information System (INIS)

    Triches, D.M.; Souza, S.M.; Poffo, C.M.; Lima, J.C. de; Grandi, T.A.; Biasi, R.S. de

    2010-01-01

    High-purity elemental Al and Sb powders were blended with equiatomic composition and submitted to mechanical alloying. For all milling times, the milled powders showed a mixture of AlSb and elemental Sb. The largest amount of AlSb was reached for milling times between 7 and 10 h. For milling times larger than 10 h, decomposition of AlSb was observed. The volume fractions of the crystalline and interfacial components were estimated using the X-ray diffraction pattern of a sample milled for 10 h. Photoacoustic absorption spectroscopy (PAS) was used to determine the thermal diffusivity and other heat transport parameters in the same sample. A combination of XRD and PAS data was used to estimate the thermal diffusivity of the interfacial component, which has a significant contribution to the thermal diffusivity of the sample.

  6. Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

    International Nuclear Information System (INIS)

    Tereshchenko, O.E.

    2006-01-01

    The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 deg. C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 x 1), (1 x 3), (4 x 3), and (4 x 1)/c(8 x 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers

  7. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    Energy Technology Data Exchange (ETDEWEB)

    Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

    2017-02-24

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

  8. Local structure of liquid Ge{sub 1}Sb{sub 2}Te{sub 4} for rewritable data storage use

    Energy Technology Data Exchange (ETDEWEB)

    Sun Zhimei; Zhou Jian [Department of Materials Science and Engineering, College of Materials, Xiamen University, 361005 (China); Blomqvist, Andreas; Ahuja, Rajeev [Division for Materials Theory, Department of Physics and Materials Science, Uppsala University, Box 530, SE-751 21, Uppsala (Sweden); Xu Lihua [Department of Inorganic Non-metallic Materials Science, School of Materials and Engineering, University of Science and Technology Beijing, 100083 (China)], E-mail: zhmsun2@yahoo.com, E-mail: zmsun@xmu.edu.cn

    2008-05-21

    Phase-change materials based on chalcogenide alloys have been widely used for optical data storage and are promising materials for nonvolatile electrical memory use. However, the mechanism behind the utilization is unclear as yet. Since the rewritable data storage involved an extremely fast laser melt-quenched process for chalcogenide alloys, the liquid structure of which is one key to investigating the mechanism of the fast reversible phase transition and hence rewritable data storage, here by means of ab initio molecular dynamics we have studied the local structure of liquid Ge{sub 1}Sb{sub 2}Te{sub 4}. The results show that the liquid structure gives a picture of most Sb atoms being octahedrally coordinated, and the coexistence of tetrahedral and fivefold coordination at octahedral sites for Ge atoms, while Te atoms are essentially fourfold and threefold coordinated at octahedral sites, as characterized by partial pair correlation functions and bond angle distributions. The local structure of liquid Ge{sub 1}Sb{sub 2}Te{sub 4} generally resembles that of the crystalline form, except for the much lower coordination number. It may be this unique liquid structure that results in the fast and reversible phase transition between crystalline and amorphous states.

  9. Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties.

    Science.gov (United States)

    Xia, Mengjiao; Ding, Keyuan; Rao, Feng; Li, Xianbin; Wu, Liangcai; Song, Zhitang

    2015-02-24

    Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based on ab initio simulations and nuclear magnetic resonance evidences. By comparing the local chemical environments around Al atoms in respective amorphous and crystalline Al-Sb-Te phases, we believe that Al-centered motifs undergo reversible tetrahedron-octahedron reconfigurations in phase transition process. Such Al-centered local structure rearrangements significantly enhance thermal stability of amorphous phase compared to that of undoped Sb-Te materials, and facilitate a low-energy amorphization due to the weak links among Al-centered and Sb-centered octahedrons. Our studies may provide a useful reference to further understand the underlying physics and optimize performances of all IIIA metal doped Sb-Te phase change materials, prompting the development of NOR/NAND Flash-like phase change memory technology.

  10. Effect of intense laser irradiation on the lattice stability of InSb

    Energy Technology Data Exchange (ETDEWEB)

    Wang, M.M.; Gao, T.; Yu, Y. [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Zeng, X.W. [School of Civil Engineering and Transportation, South China University of Technology, Guangzhou, Guangdong 510640 (China)

    2012-01-15

    Indium Antimonide (InSb) has been used in semi-conductor detectors, so investigating the structural, electronic and lattice dynamical properties of InSb is of considerable practical interest. We have performed an ab initio study of electronic and dynamical properties of the zinc-blende InSb at different electronic temperatures. The calculations have been carried out within the density-functional theory and linear-response formalism using norm-conserving pseudopotentials and a plane-wave basis. The calculated direct band gap is seen to be 0.1 eV, which is underestimated with the experimental value of 0.18 eV. As the electronic temperature increases, the results indicate that the InSb undergoes a melting transition to a metallic state. The transverse acoustic modes of the InSb are found to be negative in the most part of the Brillouin zone (BZ) which leads to lattice dynamical instability at electronic temperature of 0.75 eV as indicated by imaginary phonon frequencies. Moreover, for optical modes, there exists a LO-TO (Longitudinal Optical and Transverse Optical) splitting at the zone-center ({Gamma} point) when T{sub e} = 0 eV and the frequencies are LO = 190.5 cm{sup -1}, TO = 182.4 cm{sup -1}, respectively; however, the LO-TO splitting will disappear when T{sub e} > 0 eV. The calculated values are in reasonable agreement with available experimental and theoretical data. (authors)

  11. Cationic Site-Preference in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 Series: Theoretical and Experimental Studies

    Directory of Open Access Journals (Sweden)

    Gnu Nam

    2016-07-01

    Full Text Available Four quaternary Zintl phases with mixed-cations in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 series have been synthesized by using the arc-melting and the Sn metal-flux reaction methods, and the isotypic crystal structures of the title compounds have been characterized by both powder and single-crystal X-ray diffraction (PXRD and SXRD analyses. The overall crystal structure adopting the Ca14AlSb11-type can be described as a pack of four different types of the spiral-shaped one-dimensional octahedra chains with various turning radii, each of which is formed by the distorted ((Yb/CaSb6 octahedra. Four symmetrically-independent cationic sites contain mixed occupations of Yb2+ and Ca2+ with different mixing ratios and display a particular site preference by two cationic elements. Two hypothetical structural models of Yb4Ca10AlSb11 with different cationic arrangements were designed and exploited to study the details of site and bond energies. QVAL values provided the rationale for the observed site preference based on the electronegativity of each atom. Density of states (DOS curves indicated a semiconducting property of the title compounds, and crystal orbital Hamilton population (COHP plots explained individual chemical bonding between components. Thermal conductivity measurement was performed for Yb8.42(4Ca5.58AlSb11, and the result was compared to compounds without mixed cations.

  12. Radiosynthesis of [11C]SB-705498, a selective transient receptor potential Vanilloid 1 (TRPV1) receptor antagonist

    International Nuclear Information System (INIS)

    Dolle, F.; Bramoulle, Y.; Deverre, J.R.; Bottlaender, M.; Passchier, J.

    2011-01-01

    Complete text of publication follows: Objectives: The transient receptor potential vanilloid 1 (TRPV1) receptor, previously known as the vanilloid receptor 1 (VR1), is a non-selective cation channel activated by a range of noxious stimuli and highly expressed in nociceptive fibres. TRPV1 receptor is involved in pain and sensitisation associated with tissue injury and inflammation and therefore represents a pharmacological target of choice for the development of novel therapeutic agents for the treatment of chronic pain, migraine and gastrointestinal disorders. Among a novel series of pyrrolidinyl ureas recently discovered by GSK, SB-705498 (1, namely 1-(2-bromophenyl)-3-[(R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-yl]urea) has been identified as a potent, selective and orally bioavailable TRPV1 antagonist and considered for positron emission tomography studies. SB-705498 (1) has therefore been isotopically labelled with the short-lived positron-emitter carbon-11 (t1/2: 20.38 min) at its urea site using [ 11 C]phosgene in a one-pot two-step process, via the intermediate preparation of 2-bromophenyl [ 11 C]isocyanate. Methods: Carbon-11-labeling of SB-705498 comprises: (A) Trapping of [ 11 C]phosgene (radio-synthesized from cyclotron-produced [ 11 C]methane via [ 11 C]carbon tetrachloride using minor modifications of published processes) at room temperature for 1 to 2 minutes in 250 μL of acetonitrile containing 0.6 μmole of 2-bromoaniline (2) giving 2-bromophenyl [ 11 C]isocyanate ([ 11 C]-3), followed by (B) addition of an excess of chiral (R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-ylamine (4, 40 μmoles in 500 μL of acetonitrile) as the second amine and reaction at room temperature for an additional one minute giving the desired urea derivative ([ 11 C]SB-705498 ([ 11 C]-1)), (C) dilution of the crude reaction mixture with water (500 μL) containing 4% (v:v) of DEA, injection and purification on a semi-preparative Waters Symmetry R C18 HPLC

  13. Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

    Science.gov (United States)

    Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

    2018-06-01

    Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

  14. Fate and chemical speciation of antimony (Sb) during uptake, translocation and storage by rye grass using XANES spectroscopy.

    Science.gov (United States)

    Ji, Ying; Sarret, Géraldine; Schulin, Rainer; Tandy, Susan

    2017-12-01

    Antimony (Sb) is a contaminant of increased prevalence in the environment, but there is little knowledge about the mechanisms of its uptake and translocation within plants. Here, we applied for the synchrotron based X-ray absorption near-edge structure (XANES) spectroscopy to analyze the speciation of Sb in roots and shoots of rye grass (Lolium perenne L. Calibra). Seedlings were grown in nutrient solutions to which either antimonite (Sb(III)), antimonate (Sb(V)) or trimethyl-Sb(V) (TMSb) were added. While exposure to Sb(III) led to around 100 times higher Sb accumulation in the roots than the other two treatments, there was no difference in total Sb in the shoots. Antimony taken up in the Sb(III) treatment was mainly found as Sb-thiol complexes (roots: >76% and shoots: 60%), suggesting detoxification reactions with compounds such as glutathione and phytochelatins. No reduction of accumulated Sb(V) was found in the roots, but half of the translocated Sb was reduced to Sb(III) in the Sb(V) treatment. Antimony accumulated in the TMSb treatment remained in the methylated form in the roots. By synchrotron based XANES spectroscopy, we were able to distinguish the major Sb compounds in plant tissue under different Sb treatments. The results help to understand the translocation and transformation of different Sb species in plants after uptake and provide information for risk assessment of plant growth in Sb contaminated soils. Copyright © 2017 Elsevier Ltd. All rights reserved.

  15. Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

    2010-10-15

    We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

  16. Structural and optical studies of FeSb{sub 2} under high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Poffo, C.M.; Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, B115, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

    2012-12-15

    Nanostructured orthorhombic FeSb{sub 2} was formed along with an amorphous phase, by mechanical alloying from a mixture of Fe and Sb powders. The influence of pressure on the structural and optical properties of the material was investigated by X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 28.2 and 45.2 GPa, respectively. The volume fraction of the amorphous phase increased with increasing pressure. For pressures above 14.3 GPa, a tetragonal FeSb{sub 2} phase was also observed. For the orthorhombic FeSb{sub 2} phase, the pressure dependence of the volume fitted to a Birch-Murnaghan equation of state gave a bulk modulus B{sub 0}=75.5{+-}3.2 GPa, and its derivative B{sub 0}{sup Prime }=7.2{+-}0.7. For the orthorhombic FeSb{sub 2} phase, the Raman active A{sub g}{sup 2} mode was observed up to 28.3 GPa, while the B{sub 1g}{sup 2} mode was not for pressures larger than 14 GPa. For pressures above 21 GPa, the Raman active A{sub 1g} mode of a tetragonal FeSb{sub 2} phase was observed.

  17. The crystal structure of franckeite, Pb21.7Sn9.3Fe4.0Sb8.1S56.9

    DEFF Research Database (Denmark)

    Makovicky, Emil; Petricek, Vaclav; Dusek, Michal

    2011-01-01

    and forms a homologous pair with cylindrite, which has thinner Q slabs. The Q slabs in franckeite are four atomic layers thick. The two components have their own lattices and a common modulation. The Q slab of the refined franckeite structure, Pb21.74Sn9.34Fe3.95Sb8.08S56.87, is an MS layer (M = Pb2+, Sn2...... layer (M = Sn4+, Fe2+) with a = 3.665(8), b = 6.2575(16), c = 17.419(5) Å, a = 95.25(2)°, ß = 95.45(2)°, ¿ = 89.97(2)°; the modulation vector is q = –0.00087(8) a* + 0.13725(16) b* – 0.0314(4) c*. The a and b vectors of both subsystems are parallel; the c vectors diverge. (3+2)D superspace refinement...... was refined as Pb0.74(Sn,Sb)0.26, whereas that of cations, which are adjacent to the interspace with lone electron pairs, with a configuration analogous to that observed in orthorhombic SnS, corresponds to (Sn,Sb)0.73Pb0.27. Iron is dispersed over the octahedral Sn4+ sites in the H layer. Transversal...

  18. Magnetic and transport properties of Ce 6MnSb 15

    Science.gov (United States)

    Godart, Claude; Rogl, Peter; Alleno, Eric; Gonçalves, António P.; Rouleau, Olivier

    2006-05-01

    In our effort to look for new Ce/Yb-based compounds with large unit cell, we studied Ce 6MnSb 15. Rietveld refinements of X-ray powder diffraction confirm that the material crystallizes in orthorhombic structure La 6MnSb 15-type, Imm2 space group, with 2 Ce sites (8e and 4d) and lattice parameters a=15.1643 Å, b=19.3875 Å and c=4.2794 Å, which closely agree with those already published. Magnetic susceptibility results show a paramagnetic behavior and no magnetic order down to 2 K in contrast to antiferromagnetic order previously reported at 7 K. Resistivity shows a metallic behavior and the Seebeck coefficient is very low, typically -2 μV/K.

  19. Evaluation of the novel 5-HT4 receptor PET ligand [11C]SB207145 in the Göttingen minipig

    DEFF Research Database (Denmark)

    Kornum, Birgitte R; Lind, Nanna M; Gillings, Nic

    2009-01-01

    This study investigates 5-hydroxytryptamine 4 (5-HT(4)) receptor binding in the minipig brain with positron emission tomography (PET), tissue homogenate-binding assays, and autoradiography in vitro. The cerebral uptake and binding of the novel 5-HT(4) receptor radioligand [(11)C]SB207145 in vivo...... was modelled and the outcome compared with postmortem receptor binding. Different models for quantification of [(11)C]SB207145 binding were evaluated: One-tissue and two-tissue compartment kinetic modelling, Logan arterial input, and three different reference tissue models. We report that the pig...... model provides stable and precise estimates of the binding potential in all regions. The binding potentials calculated for striatum, midbrain, and cortex from the PET data were highly correlated with 5-HT(4) receptor concentrations determined in brain homogenates from the same regions, except...

  20. Modeling of InGaSb thermophotovoltaic cells and materials

    Energy Technology Data Exchange (ETDEWEB)

    Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01

    A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.