Characterization of CdZnTe ambient temperature detectors

International Nuclear Information System (INIS)

Lavietes, A.

1994-09-01

A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

Performance characteristics of CdTe drift ring detector

Science.gov (United States)

Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

2014-03-01

CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

Performance simulation and structure design of Binode CdZnTe gamma-ray detector

International Nuclear Information System (INIS)

Niu Libo; Li Yulan; Fu Jianqiang; Jiang Hao; Zhang Lan; He Bin; Li Yuanjing

2014-01-01

A new electrode structure CdZnTe (Cadmium Zinc Telluride) detector named Binode CdZnTe has been pro- posed in this paper. Together with the softwares of MAXWELL, GEANT4, and ROOT, the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized. In order to improve its performance further, Compton scattering effect correction has been used. The simulation results demonstrate that with refined design and Compton scattering effect correction, Binode CdZnTe detectors is capable of achieving 3.92% FWHM at 122 keV, and 1.27% FWHM at 662 keV. Com- pared with other single-polarity (electron-only) detector configurations, Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution. (authors)

New Position Algorithms for the 3-D CZT Drift Detector

Science.gov (United States)

Budtz-Jørgensen, C.; Kuvvetli, I.

2017-06-01

The 3-D position sensitive CZT detector for high-energy astrophysics developed at DTU has been investigated with a digitizer readout system. The 3-D CZT detector is based on the CZT drift-strip detector principle and was fabricated using a REDLEN CZT crystal (20 mm × 20 mm × 5 mm). The detector contains 12 drift cells, each comprising one collecting anode strip with four drift strips, biased such that the electrons are focused and collected by the anode strips. Three-dimensional position determination is achieved using the anode strip signals, the drift-strip signals, and the signals from ten cathode strips. For the characterization work, we used a DAQ system with a 16 channels 250-MHz 14-b digitizer, SIS3316. It allowed us to analyze the pulse shapes of the signals from four detector cells at a time. The 3-D CZT setup was characterized with a finely collimated radioactive source of 137Cs at 662 keV. The analysis required development of novel position determination algorithms which are the subject of this paper. Using the digitizer readout, we demonstrate improved position determination compared to the previous read out system based on analog electronics. Position resolutions of 0.4-mm full width at half maximum (FWHM) in the x-, y-, and z-directions were achieved and the energy resolution was 7.2-keV FWHM at 662 keV. The timing information allows identification of multiple interaction events within one detector cell, e.g., Compton scattering followed by photoelectric absorption. These characteristics are very important for a high-energy spectral-imager suitable for use in advanced Compton telescopes, or as focal detector for new hard X-ray and soft γ-ray focusing telescopes or in polarimeter instrumentation. CZT detectors are attractive for these applications since they offer relatively high-quantum efficiency. From a technical point of view it is advantageous that their cooling requirements are modest.

Performance of CdZnTe coplanar-grid gamma-ray detectors

International Nuclear Information System (INIS)

Luke, P.N.; Eissler, E.E.

1995-11-01

CdZnTe crystals grown using the high-pressure Bridgman method exhibit many properties that are desirable for radiation detector fabrication, such as high resistivity, stable operation, relative ease of processing, and the availability of large volume crystals. However, as is common with other compound semi-conductor materials, currently available CdZnTe crystals have poor charge transport characteristics. This seriously the spectral performance of detectors, especially in gamma-ray detection. The coplanar-grid detection technique was recently developed to address such charge collection problems. This technique was first demonstrated using a 5 mm cube CdZnTe detector, and a dramatic improvement in spectral response has been achieved. These early results verified the effectiveness of this technique and suggested that large-volume gamma-ray detectors with high energy resolution can be realized. To further the development of such detectors, it is important to understand the various factors that affect detector performance. The purpose of this paper is to examine the effects of material properties on the spectral performance of CdZnTe coplanar-grid detectors. Theoretical spectral response is to show the level of performance that can be achieved given the typical carrier mobility-lifetime (μτ) properties of present-day materials. Nonuniformity in the charge transport properties of the material, which could limit the energy resolution of the detectors, has been studied experimentally and some of the results are presented here

CZT drift strip detectors for high energy astrophysics

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Caroli, E.

2010-01-01

Requirements for X- and gamma ray detectors for future High Energy Astrophysics missions include high detection efficiency and good energy resolution as well as fine position sensitivity even in three dimensions.We report on experimental investigations on the CZT drift detector developed DTU Space...

Infrared Illuminated CdZnTe detectors with improved performance

International Nuclear Information System (INIS)

Ivanov, V.; Loutchanski, A.; Dorogov, P.; Khinoverov, S.

2013-06-01

It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm 3 to larger with volumes of 1.5 cm 3 and 4.0 cm 3 . The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm 3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

Multielement CdZnTe detectors for high-efficiency, ambient-temperature gamma-ray spectroscopy

International Nuclear Information System (INIS)

Prettyman, T.H.; Moss, C.E.; Sweet, M.R.; Ianakiev, K.; Reedy, R.C.; Li, J.; Valentine, J.D.

1998-01-01

CdZnTe is an attractive alternative to scintillator-based technology for ambient-temperature, gamma-ray spectroscopy. Large, single-element devices up to 3500 mm 3 have been developed for gamma-ray spectroscopy and are now available commercially. Because CdZnTe is a wide band-gap semiconductor, it can operate over a wide range of ambient temperatures with minimal power consumption. Over this range, CdZnTe detectors routinely yield better overall performance for gamma-ray spectroscopy than scintillator detectors. Manufacturing issues and material electronic properties limit the maximum size of single-element CdZnTe detectors. The authors are investigating methods to combine CdZnTe detectors together to improve detection efficiency and overall performance of gamma-ray spectroscopy. The applications include the assay and identification of radioisotopes for nuclear material safeguards and nonproliferation (over the energy range 50 keV to 1 MeV), and the analysis of elemental composition for planetary science (over the energy range 1 MeV to 10 MeV). Design issues for the two energy ranges are summarized

Performance Evaluation of New Generation CdZnTe Detectors for Safeguards Applications

International Nuclear Information System (INIS)

Ivanovs, V.; Mintcheva, J.; Berlizov, A.; Lebrun, A.

2015-01-01

Cadmium zinc telluride detectors (CdZnTe) have found a wide application in nondestructive assay measurements in the IAEA's verification practice. It is because of their form factor, usability, sensitivity and good spectral characteristics that they are extensively used for fresh and spent fuel attribute test measurements. Until now, the series of CdZnTe detectors utilized in the IAEA have covered the range of 5 mm 3 , 20 mm 3 , 60 mm 3 and 500mm 3 of sensitive volume. Recently, new CdZnTe detectors with improved spectroscopic characteristics and significantly bigger active volume have become available, owing to advances in crystal and detector manufacturing and signal processing technologies. The distinctive feature of this new technological development is the application of a low-intensity monochromatic optical stimulation with infrared (IR) light. The use of IR illumination with a properly chosen wavelength close to the absorption edge of the CdZnTe can significantly improve the performance of the detectors. Recognizing potential benefits of these detectors in safeguards applications, the IAEA has performed an evaluation of their performance characteristics. Under evaluation were several new detectors with sensitive volumes of 500 mm 3 , 1500 mm 3 and 4000 mm 3 , as well as all-in-one 60 mm 3 , 500 mm 3 and 1500 mm 3 integrated micro-spectrometers available from RITEC, Latvia. In addition to the standard performance characteristics, such as energy resolution, peak shape, efficiency, linearity, throughput and temperature stability, the potential use of the detectors for safeguards specific measurements, such as uranium enrichment with infinite thickness method, was of particular interest. The paper will describe the advances in the CdZnTe detector technology and present the results of their performance evaluation. (author)

CdZnTe Image Detectors for Hard-X-Ray Telescopes

Science.gov (United States)

Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

2005-01-01

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

TE INCLUSIONS AND THEIR RELATIONSHIP TO THE PERFORMANCE OF CDZNTE DETECTORS.

Energy Technology Data Exchange (ETDEWEB)

CARINI, G.A.; BOLOTNIKOV, A.E.; CAMARDA, G.S.; CUI, Y.; JACKSON, H.; BURGER, A.; KOHMAN, K.T.; LI, L.; JAMES, R.B.

2006-08-13

Te-rich secondary phases existing in CdZnTe (CZT) single crystals degrade the spectroscopic performance of these detectors. An unpredictable number of charges are trapped, corresponding to the abundance of these microscopic defects, thereby leading to fluctuations in the total collected charge and strongly affecting the uniformity of charge-collection efficiency. These effects, observed in thin planar detectors, also were found to be the dominant cause of the low performance of thick detectors, wherein the fluctuations accumulate along the charge's drift path. Reducing the size of Te inclusions from a virtual diameter of 10-20 {micro}m down to less than 5 {micro}m already allowed us to produce Frisch-ring detectors with a resolution as good as {approx}0.8% FWHM at 662 keV: Understanding and modeling the mechanisms involving Te-rich secondary phases and charge loss requires systematic studies on a spatial scale never before realized. Here, we describe a dedicated beam-line recently established at BNL's National Synchrotron Light Source for characterizing semiconductor detectors along with a IR system with counting capability that permits us to correlate the concentration of defects with the devices' performances.

High performance p-i-n CdTe and CdZnTe detectors

CERN Document Server

Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

1999-01-01

A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

Directory of Open Access Journals (Sweden)

Jakub Pekárek

2016-09-01

Full Text Available This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm − 2 ·s − 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

CERN Document Server

Losel, Philipp Jonathan; The ATLAS collaboration

2015-01-01

Resisitve strip Micromegas detectors behave discharge tolerant. They have been tested extensively as smaller detectors of about 10 x 10 cm$^2$ in size and they work reliably at high rates of 100\\,kHz/cm$^2$ and above. Tracking resolutions well below 100\\,$\\mu$m have been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3\\,m$^2$ in size. To investigate possible differences between small and large detectors, a 1\\,m$^2$ detector with 2048 resistive strips at a pitch of 450 $\\mu$m was studied in the LMU Cosmic Ray Facility (CRF) using two 4 $\\times$ 2.2 m$^2$ large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. Segmentation of the resistive strip anode plane in 57.6\\,mm x 95\\,mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by 11 95\\,mm broad trigger scintillators placed along the readout strips.\\\\ This allows for mapping of homogenity in pulse height and efficiency, deter...

Advancements of floating strip Micromegas detectors for medical imaging applications

Energy Technology Data Exchange (ETDEWEB)

Klitzner, Felix; Biebel, Otmar; Bortfeldt, Jonathan; Flierl, Bernhard [LS Schaile, LMU Muenchen (Germany); Magallanes, Lorena [LS Parodi, LMU Muenchen (Germany); Universitaetsklinikum Heidelberg (Germany); Parodi, Katia [LS Parodi, LMU Muenchen (Germany); Heidelberger Ionenstrahl Therapiezentrum (Germany); Voss, Bernd [Gesellschaft fuer Schwerionenforschung, Darmstadt (Germany)

2016-07-01

Floating strip Micromegas have proven to be high-rate capable tracking detectors with excellent spatial and temporal resolution for particle fluxes up to 7 MHz/cm{sup 2}. To further increase the high-rate capability a Ne:CF{sub 4} 86:14 vol.% gas mixture has been used as detector gas. We present results from measurements with a seven detector system consisting of six low material budget floating strip Micromegas, a GEM detector and a scintillator based particle range telescope. The gaseous and the scintillation detectors were read out with APV25 frontend boards, allowing for single strip readout with pulse height and timing information. A two-dimensional readout anode for floating strip Micromegas has been tested for the first time. The Micromegas detectors were operated with minimal additional drift field, which significantly improves the timing resolution and also the spatial resolution for inclined tracks. We discuss the detector performance in high-rate carbon and proton beams at the Heidelberg Ion Beam Therapy Center (HIT) and present radiographies of phantoms, acquired with the system.

Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00389527; The ATLAS collaboration

2016-01-01

Resistive strip Micromegas detectors are discharge tolerant. They have been tested extensively as small detectors of about 10 x 10 cm$^2$ in size and they work reliably at high rates of 100 kHz/cm$^2$ and above. Tracking resolution well below 100 $\\mu$m has been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3 m$^2$ in size. To investigate possible differences between small and large detectors, a 1 m$^2$ detector with 2048 resistive strips at a pitch of 450 $\\mu$m was studied in the LMU Cosmic Ray Measurement Facility (CRMF) using two 4 $\\times$ 2.2 m$^2$ large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. A segmentation of the resistive strip anode plane in 57.6 mm x 93 mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by eleven 93 mm broad trigger scintillators placed along the readout strips. This allows for mapping of homogeneity in pulse height and efficiency, d...

Control of electric field in CdZnTe radiation detectors by above-bandgap light

International Nuclear Information System (INIS)

Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P.; Touš, J.; Sellin, P. J.

2015-01-01

We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states

Control of electric field in CdZnTe radiation detectors by above-bandgap light

Energy Technology Data Exchange (ETDEWEB)

Franc, J.; Dědič, V.; Rejhon, M.; Zázvorka, J.; Praus, P. [Institute of Physics of Charles University, Prague (Czech Republic); Touš, J. [Crytur Ltd., Turnov (Czech Republic); Sellin, P. J. [Department of Physics, University of Surrey, Guildford (United Kingdom)

2015-04-28

We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states.

Gas filled prototype of a CdZnTe pixel detector

International Nuclear Information System (INIS)

Ramsey, B.; Sharma, D.; Sipila, H.; Gostilo, V.; Loupilov, A.

2001-01-01

CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5-100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 (2001) 55) we presented preliminary results on the development of prototype 4x4 CdZnTe imaging detectors operated under vacuum. These pixel detectors were installed inside vacuum chambers on three-stage Peltier coolers providing detector temperatures down to -40 deg. C. A miniature sputter ion pump inside each chamber maintained the necessary vacuum of 10 -5 Torr. At a temperature of -20 deg. C we achieved an FWHM energy resolution of between 2% and 3% at 60 keV and ∼15% at 5.9 keV; however, the dependency on temperature was weak and at +20 deg. C the respective resolutions were 3% and 20%. As the detectors could be operated at room temperature without loss of their good characteristics it was possible to exclude the sputter ion pump and fill the chamber with dry nitrogen instead. We have tested a nitrogen-filled CdZnTe (5x5x1 mm 3 ) prototype having 0.65x0.65 mm 2 readout pads on a 0.75 mm pitch. The interpixel resistance at an applied voltage of 10 V was higher than 50 GΩ and the pixel leakage currents at room temperature with a bias of 200 V between each pad and the common electrode did not exceed 0.8 nA. The pixel detector inside the microassembly, which also contained the input stages of the preamplifiers, was installed on a Peltier cooler to maintain the detector temperature at +20 deg. C. To define real leakage currents of the pixels in their switched-on state we have checked the voltage on the preamplifiers feedback resistors. The resulting currents were 10-50 pA at a detector bias of 500 V. Under test, the typical energy resolution per pixel at +20 deg. C was ∼3% at energy 59.6 keV and ∼20% at energy 5.9 keV, which are similar to the values obtained in the vacuum prototype at room temperature

Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector

Science.gov (United States)

Mao, Yifei; Zhang, Jijun; Lin, Liwen; Lai, Jianming; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Wang, Linjun

2018-04-01

Different wavelength IR light (770-1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) of CdZnTe achieved 10-2 cm2 V-1 when the IR wavelength was in the range of 820-920 nm, but decreased to 1 × 10-4 cm2 V-1 when the wavelength was longer than 920 nm. The mechanism about how IR light affecting the carrier transport property of CdZnTe detector was analyzed with Shockley-Read-Hall model. The defect of doubly ionized Cd vacancy ([VCd]2-) was found to be the main factor that assist IR light affecting the μτ of CdZnTe detector. The photoconductive experiment under 770-1150 nm IR illumination was carried out, and three kinds of photocurrent curve were detected and analyzed by solving the Hecht equation. The experiments demonstrated the effect of [VCd]2- defect on the carrier transport property of CdZnTe detector under IR illumination.

Primary study of Monte Carlo simulation on CdZnTe nuclear detector

International Nuclear Information System (INIS)

Ren Shaojun; Sang Wenbin; Jin Wei; Li Wanwan; Zhang Qi; Min Jiahua

2004-01-01

The Monte Carlo simulation software is developed based on the operating principle of CdZnTe detector, the randomicity of γ ray reaction in the detector and the statistic rule of the amount of electron-hole pairs produced. First, the reaction depth of photons is calculated based on the disintegration rule. Secondly, the reaction section of every reaction is estimated and the reaction probability of the three atoms in CZT and the probability of every reaction of every atom are calculated. Based on these probabilities, the category of atoms and the type of reactions of a photon reacting with the detector are determined and the amount of electron-hole pairs produced by the photon is obtained. From the reaction depth and the amount of electron-hole pairs produced, the amount of charge collected can be calculated. The response energy spectra of γ ray in the CdZnTe detector are simulated by using the Monte Carlo software developed. The simulation results are well comparable with the data of the real CdZnTe devices. In addition, the ideal thickness of the device, which is of maximum detecting efficiency, is also obtained based on the analysis over the relationship between the thickness and the efficiency, assuming the device to be under the radiation of 57 Co source

Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

International Nuclear Information System (INIS)

Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Hossain, A.; Yang, G.; Yao, H.W.; James, R.B.

2009-01-01

The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, 1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field

Strip interpolation in silicon and germanium strip detectors

International Nuclear Information System (INIS)

Wulf, E. A.; Phlips, B. F.; Johnson, W. N.; Kurfess, J. D.; Lister, C. J.; Kondev, F.; Physics; Naval Research Lab.

2004-01-01

The position resolution of double-sided strip detectors is limited by the strip pitch and a reduction in strip pitch necessitates more electronics. Improved position resolution would improve the imaging capabilities of Compton telescopes and PET detectors. Digitizing the preamplifier waveform yields more information than can be extracted with regular shaping electronics. In addition to the energy, depth of interaction, and which strip was hit, the digitized preamplifier signals can locate the interaction position to less than the strip pitch of the detector by looking at induced signals in neighboring strips. This allows the position of the interaction to be interpolated in three dimensions and improve the imaging capabilities of the system. In a 2 mm thick silicon strip detector with a strip pitch of 0.891 mm, strip interpolation located the interaction of 356 keV gamma rays to 0.3 mm FWHM. In a 2 cm thick germanium detector with a strip pitch of 5 mm, strip interpolation of 356 keV gamma rays yielded a position resolution of 1.5 mm FWHM

Prototype of the stacked CdZnTe semiconductor detector for 16N measurement

International Nuclear Information System (INIS)

Nishizawa, Hiroshi; Inujima, Hiroshi; Fujiwara, Hirotsugu; Nakamura, Hiroaki

2001-01-01

Prototype of the Stacked CdZnTe Semiconductor Detector for Measurement The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13 MeV γ-ray from 16 N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137 Cs and 60 Co, and 16 N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident γ-ray energy and its intensity ratio was identified and that the energy of 6 MeV γ-ray could be measured by the prototype of the stacked detector. (author)

A CdZnTe slot-scanned detector for digital mammography

International Nuclear Information System (INIS)

Mainprize, James G.; Ford, Nancy L.; Yin Shi; Gordon, Eli E.; Hamilton, William J.; Tuemer, Tuemay O.; Yaffe, Martin J.

2002-01-01

A new high-resolution detector has been developed for use in a slot-scanned digital mammography system. The detector is a hybrid device that consists of a CCD operating in time-delay integration mode that is bonded to a 150-μm-thick CdZnTe photoconductor array. The CCD was designed with a detector element pitch of 50 μm. Two devices were evaluated with differing crystalline quality. Incomplete charge collection was a source of reduction in DQE. This occurs in both devices due to characteristically low mobility-lifetime products for CdZnTe, with the greatest losses demonstrated by the multicrystalline sample. The mobility-lifetime products for the multicrystalline device were found to be 2.4x10 -4 and 4.0x10 -7 cm 2 /V for electrons and holes, respectively. The device constructed with higher quality single crystal CdZnTe demonstrated mobility-lifetime products of 1.0x10 -4 and 4.4x10 -6 cm 2 /V for electrons and holes. The MTF and DQE for the device were measured at several exposures and results were compared to predictions from a linear systems model of signal and noise propagation. The MTF at a spatial frequency of 10 mm -1 exceeded 0.18 and 0.56 along the scan and slot directions, respectively. Scanning motion and CCD design limited the resolution along the scan direction. For an x-ray beam from a tungsten target tube with 40 μm molybdenum filtration operated at 26 kV, the single crystal device demonstrated a DQE(0) of 0.70±0.02 at 7.1x10 -6 C/kg (27 mR) exposure to the detector, despite its relatively poor charge collection efficiency

Influence of infrared stimulation on spectroscopy characteristics of co-planar grid CdZnTe detectors

International Nuclear Information System (INIS)

Fjodorov, V.; Ivanov, V.; Loutchanski, A.

2015-01-01

It was previously found that illumination with monochromatic infrared (IR) light with wavelengths close to the absorption edge of the CdZnTe exert significant positive influence on the spectrometric characteristics of quasi-hemispherical CdZnTe detectors at room temperature. In this paper, preliminary results of IR stimulation on the spectrometric characteristics of coplanar-grid CdZnTe detectors as well as results of further studies of planar and quasi-hemispherical detectors are presented. Coplanar-grid detectors of 10 mm x 10 mm x 10 mm from Redlen Technologies and commercial available IR LEDs with different wavelengths of 800-1000 nm were used in the experiments. Influence of intensity and direction of IR illumination on the detector's characteristics was studied. Analysis of signals shapes from the preamplifiers outputs at registration of alpha particles showed that IR illumination leads to a change in the shapes of these signals. This may indicate changes in electric fields distributions. An improvement in energy resolution at gamma-energy of 662 keV was observed with quasi-hemispherical and co-planar detectors at the certain levels of IR illumination intensity. The most noticeable effect of IR stimulation was observed with quasi-hemispherical detectors. It is due with optimization of charge collection conditions in the quasi-hemispherical detectors under IT stimulation. (authors)

Leakage current measurements on pixelated CdZnTe detectors

International Nuclear Information System (INIS)

Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

International Nuclear Information System (INIS)

Luke, P.N.; Amman, M.; Lee, J.S.; Yaver, H.

1998-06-01

A 3-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Drift chamber detectors

International Nuclear Information System (INIS)

Duran, I.; Martinez Laso, L.

1989-01-01

A review of High Energy Physics detectors based on drift chambers is presented. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysied, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author)

Characterization of large volume CdZnTe detectors with a quad-grid structure for the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Rohatsch, Katja [TU Dresden, Institut fuer Kern- und Teilchenphysik, 01069 Dresden (Germany); Collaboration: COBRA-Collaboration

2016-07-01

The COBRA experiment uses room temperature semiconductor detectors made of Cadmium-Zinc-Telluride, which contains several double beta isotopes, to search for neutrinoless double beta-decay. To compensate for poor hole transport in CdZnTe the detectors are equipped with a coplanar grid (CPG) instead of a planar anode. Currently, a demonstrator setup consisting of 64 1 cm{sup 3} CPG-detectors is in operation at the LNGS in Italy to prove the concept and to determine the long-term stability of the detectors and the instrumentation. For a future large scale experiment it is planned to use larger CdZnTe detectors with a volume of 6 cm{sup 3}, because of the better surface-to-volume ratio and the higher full energy detection efficiency. This will also reduce the background contribution of surface contaminations. Before the installation at the LNGS the new detector design is validated and studied in detail. This talk presents a laboratory experiment for the characterization with γ-radiation of 6 cm{sup 3} CdZnTe quad-grid detectors. The anode of such a detector is divided into four sub-CPGs. The characterization routine consists of the determination of the optimal working point and two-dimensional spatially resolved scans with a highly collimated γ-source.

Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

International Nuclear Information System (INIS)

Eisen, Y.

1996-01-01

Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

Drift Chambers detectors

International Nuclear Information System (INIS)

Duran, I.; Martinez laso, L.

1989-01-01

We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs

Evaluation the image obtained from X-ray flat-panel detectors utilizing a polycrystalline CdZnTe film as the conversion layer

International Nuclear Information System (INIS)

Tokuda, S.; Kishihara, H.; Kaino, M.; Sato, T.

2006-01-01

We can expect that fluoroscopic images with a high sensitivity and excellent detective efficiency can be obtained by using a semiconductor with a small W factor for the conversion layer of X-ray flat-panel detectors, which have experienced a rapid gain inpopularity for medical and non-destructive industrial inspection uses in recent years. We believe that polycrystalline CdZnTe film formed by the closed spaced sublimation (CSS) method is a promising conversion material for next-generation high efficiency X-ray flat-panel detectors, and have previously reported the results of feasibility studies. In this paper, we present an overview of X-ray flat-panel detectors and the features of CdZnTe film, then we describe the CSS method of deposition and evaluation of the physical characteristics of CdZnTe film, and finally we present the results of our fabrication and testing of proto-type detectors utilizing CdZnTe film. (author)

Influence for high intensity irradiation on characteristics of silicon strip-detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

1995-01-01

Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

Leakage current measurements on pixelated CdZnTe detectors

NARCIS (Netherlands)

Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

CERN Document Server

Ricq, S; Garcin, M

2000-01-01

The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

Drift Chambers detectors; Detectores de deriva

Energy Technology Data Exchange (ETDEWEB)

Duran, I; Martinez laso, L

1989-07-01

We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs.

Performance comparison of small-pixel CdZnTe radiation detectors with gold contacts formed by sputter and electroless deposition

Science.gov (United States)

Bell, S. J.; Baker, M. A.; Duarte, D. D.; Schneider, A.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.

2017-06-01

Recent improvements in the growth of wide-bandgap semiconductors, such as cadmium zinc telluride (CdZnTe or CZT), has enabled spectroscopic X/γ-ray imaging detectors to be developed. These detectors have applications covering homeland security, industrial analysis, space science and medical imaging. At the Rutherford Appleton Laboratory (RAL) a promising range of spectroscopic, position sensitive, small-pixel Cd(Zn)Te detectors have been developed. The challenge now is to improve the quality of metal contacts on CdZnTe in order to meet the demanding energy and spatial resolution requirements of these applications. The choice of metal deposition method and fabrication process are of fundamental importance. Presented is a comparison of two CdZnTe detectors with contacts formed by sputter and electroless deposition. The detectors were fabricated with a 74 × 74 array of 200 μm pixels on a 250 μm pitch and bump-bonded to the HEXITEC ASIC. The X/γ-ray emissions from an 241Am source were measured to form energy spectra for comparison. It was found that the detector with contacts formed by electroless deposition produced the best uniformity and energy resolution; the best pixel produced a FWHM of 560 eV at 59.54 keV and 50% of pixels produced a FWHM better than 1.7 keV . This compared with a FWHM of 1.5 keV for the best pixel and 50% of pixels better than 4.4 keV for the detector with sputtered contacts.

Investigation of the limitations of the highly pixilated CdZnTe detector for PET applications.

Science.gov (United States)

Komarov, Sergey; Yin, Yongzhi; Wu, Heyu; Wen, Jie; Krawczynski, Henric; Meng, Ling-Jian; Tai, Yuan-Chuan

2012-11-21

We are investigating the feasibility of a high resolution positron emission tomography (PET) insert device based on the CdZnTe detector with 350 µm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution. In this paper, we have used a simplified version of the multi pixel CdZnTe planar detector, 5 mm thick with 9 anode pixels only. This simplified 9 anode pixel structure makes it possible to carry out experiments without a complete application-specific integrated circuits readout system that is still under development. Special attention was paid to the double pixel (or charge sharing) detections. The following characteristics were obtained in experiment: energy resolution full-width-at-half-maximum (FWHM) is 7% for single pixel and 9% for double pixel photoelectric detections of 511 keV gammas; timing resolution (FWHM) from the anode signals is 30 ns for single pixel and 35 ns for double pixel detections (for photoelectric interactions only the corresponding values are 20 and 25 ns); position resolution is 350 µm in x,y-plane and ∼0.4 mm in depth-of-interaction. The experimental measurements were accompanied by Monte Carlo (MC) simulations to find a limitation imposed by spatial charge distribution. Results from MC simulations suggest the limitation of the intrinsic spatial resolution of the CdZnTe detector for 511 keV photoelectric interactions is 170 µm. The interpixel interpolation cannot recover the resolution beyond the limit mentioned above for photoelectric interactions. However, it is possible to achieve higher spatial resolution using interpolation for Compton scattered events. Energy and timing resolution of the proposed 350 µm anode pixel pitch detector is no better than 0.6% FWHM at 511 keV, and 2 ns FWHM, respectively. These MC results should be used as a guide to understand the performance limits of the pixelated CdZnTe detector due to the underlying detection processes, with the understanding of

Cooled CdZnTe detectors for X-ray astronomy

CERN Document Server

Bale, G; Seller, P; Lowe, B

1999-01-01

Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

International Nuclear Information System (INIS)

Cho, H Y; Kwon, Y K; Lee, C S; Lee, J H; Moon, J Y

2011-01-01

In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /Vc s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) x 10 -3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) x 10 -4 cm 2 /V.

Development of CdZnTe X-ray detectors at DSRI

DEFF Research Database (Denmark)

van Pamelen, M.A.J.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

2000-01-01

An overview of the development of CdZnTe X-ray detectors at the Danish Space Research Institute is presented. Initiated in the beginning of 1996, the main motivation at that time was to develop focal plane detectors for the novel type of hard X-ray telescopes, which are currently under study...... developed a technique, which, with the use of microstrip electrodes, is able to compensate for the signal loss caused by trapping of positive charge carriers. This technique leads to a dramatic improvement of the achievable energy resolution, even for crystals of poor quality. With the technique, hole...

Diagnostic X-ray spectrometry using a commercial CdZnTe detector

International Nuclear Information System (INIS)

Becker, P.H.B.

1998-01-01

X ray spectrometry using Ge or Si detectors is an established tool to measure characterization parameters of X-ray beams. This work describes how a commercial CdZnTe was used to perform diagnostic X-ray spectrometry. Spectra were measured for two X-ray machines and compared with similar data found in the literature with an agreement of 2% rms

Progress in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Walton, J.; Gatti, E.

1985-01-01

Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

Discrimination of alpha particles in CdZnTe detectors with coplanar grid for the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Rebber, Henning [Universitaet Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg (Germany); Collaboration: COBRA-Collaboration

2016-07-01

The aim of the COBRA experiment is the search for neutrinoless double beta decay using CdZnTe semiconductor detectors. A background rate in the order of 10{sup -3} counts per keV, kg and year is intended in order to be sensitive to a half-life larger than 10{sup 26} years. Measurements from a demonstrator setup and Monte Carlo simulations indicate that a large background component is due to alpha particles. These generate charge clouds of only few μm in diameter in the detector, leading to characteristic pulse features. Parameter-based cut criteria were developed to discriminate alpha events by means of their pulse shapes. The cuts were tested on data from alpha and beta irradiation of a (1 x 1 x 1) cm{sup 3} CdZnTe detector with coplanar grid. The pulse shapes of all event signals were read out by FADCs with a sampling rate of 100 MHz. The signals were reproduced by a detector simulation which hence was used to study the cuts for energies up to 3 MeV and different detector regions.

Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

International Nuclear Information System (INIS)

Bale, Derek S.

2010-01-01

Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 μm) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

Superconducting nano-strip particle detectors

International Nuclear Information System (INIS)

Cristiano, R; Ejrnaes, M; Casaburi, A; Zen, N; Ohkubo, M

2015-01-01

We review progress in the development and applications of superconducting nano-strip particle detectors. Particle detectors based on superconducting nano-strips stem from the parent devices developed for single photon detection (SSPD) and share with them ultra-fast response times (sub-nanosecond) and the ability to operate at a relatively high temperature (2–5 K) compared with other cryogenic detectors. SSPDs have been used in the detection of electrons, neutral and charged ions, and biological macromolecules; nevertheless, the development of superconducting nano-strip particle detectors has mainly been driven by their use in time-of-flight mass spectrometers (TOF-MSs) where the goal of 100% efficiency at large mass values can be achieved. Special emphasis will be given to this case, reporting on the great progress which has been achieved and which permits us to overcome the limitations of existing mass spectrometers represented by low detection efficiency at large masses and charge/mass ambiguity. Furthermore, such progress could represent a breakthrough in the field. In this review article we will introduce the device concept and detection principle, stressing the peculiarities of the nano-strip particle detector as well as its similarities with photon detectors. The development of parallel strip configuration is introduced and extensively discussed, since it has contributed to the significant progress of TOF-MS applications. (paper)

Pulse shaping system research of CdZnTe radiation detector for high energy x-ray diagnostic

Science.gov (United States)

Li, Miao; Zhao, Mingkun; Ding, Keyu; Zhou, Shousen; Zhou, Benjie

2018-02-01

As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time τs-k. And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM), and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.

New Position Algorithms for the 3-D CZT Drift Detector

DEFF Research Database (Denmark)

Budtz-Jørgensen, Carl; Kuvvetli, Irfan

2017-01-01

The 3-D position sensitive CZT detector for high-energy astrophysics developed at DTU has been investigated with a digitizer readout system. The 3-D CZT detector is based on the CZT drift-strip detector principle and was fabricated using a REDLEN CZT crystal (20 mm x 20 mm x 5 mm). The detector...... at 662 keV. The analysis required development of novel position determination algorithms which are the subject of this paper. Using the digitizer readout, we demonstrate improved position determination compared to the previous read out system based on analog electronics. Position resolutions of 0.4-mm....... These characteristics are very important for a high-energy spectral-imager suitable for use in advanced Compton telescopes, or as focal detector for new hard X-ray and soft gamma-ray focusing telescopes or in polarimeter instrumentation. CZT detectors are attractive for these applications since they offer relatively...

Direct conversion Si and CdZnTe detectors for digital mammography

CERN Document Server

Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

2000-01-01

Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

Design of low noise front-end ASIC and DAQ system for CdZnTe detector

International Nuclear Information System (INIS)

Luo Jie; Deng Zhi; Liu Yinong

2012-01-01

A low noise front-end ASIC has been designed for CdZnTe detector. This chip contains 16 channels and each channel consists of a dual-stage charge sensitive preamplifier, 4th order semi-Gaussian shaper, leakage current compensation (LCC) circuit, discriminator and output buffer. This chip has been fabricated in Chartered 0.35 μm CMOS process, the preliminary results show that it works well. The total channel charge gain can be adjusted from 100 mV/fC to 400 mV/fC and the peaking time can be adjusted from 1 μs to 4 μs. The minimum measured ENC at zero input capacitance is 70 e and minimum noise slope is 20 e/pF. The peak detector and derandomizer (PDD) ASIC developed by BNL and an associated USB DAQ board are also introduced in this paper. Two front-end ASICs can be connected to the PDD ASIC on the USB DAQ board and compose a 32 channels DAQ system for CdZnTe detector. (authors)

Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

Science.gov (United States)

Voss, Lars; Conway, Adam; Nelson, Art; Nikolic, Rebecca J.; Payne, Stephen A.; Swanberg, Jr., Erik Lars

2018-05-01

A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

Computer controlled drifting of Si(Li) detectors

International Nuclear Information System (INIS)

Landis, D.A.; Wong, Y.K.; Walton, J.T.; Goulding, F.S.

1989-01-01

A relatively inexpensive computer-controlled system for performing the drift process used in fabricating Si(Li) detectors is described. The system employs a small computer to monitor the leakage current, applied voltage and temperature on eight individual drift stations. The associated computer program initializes the drift process, monitors the drift progress and then terminates the drift when an operator set drift time has elapsed. The improved control of the drift with this system has been well demonstrated over the past three years in the fabrication of a variety of Si(Li) detectors. A few representative system responses to detector behavior during the drift process are described

A novel self-biased linear silicon drift detector

International Nuclear Information System (INIS)

Corsi, F.; Gramegna, G.; Marzocca, C.

1999-01-01

A novel linear silicon drift detector (SDD) is proposed in which the proper potential profile is established by the voltage drop along a unique p + cathode implanted across the surfaces. This p + implant, arranged in a zigzag shape, acts at the same time as voltage divider and field cathode and allows one to increase the sensitive area, improving also the uniformity of the thermal distribution and thus minimizing the fluctuation of the electron mobility on the sensitive zone of the SDD. The perturbations of the drift field due to the asymmetry of the strips constituting the zigzag cathode have been evaluated by solving analytically Poisson's equation for a simplified model of the structure. Three-dimensional numerical simulations have been carried out to prove the negligible amount of the perturbation and the effectiveness of the proposed structure. Based on this principle, a prototype has been manufactured at Canberra Semiconductor Company. Dynamic measurements of the time-of-flight of an injected charge prove that the linearity of the prototype and the drift uniformity in the anode direction are very high

Charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Kraner, H.W.; Beuttenmuller, R.; Ludlam, T.; Hanson, A.L.; Jones, K.W.; Radeka, V.; Heijne, E.H.M.

1982-11-01

The use of position sensitive silicon detectors as very high resolution tracking devices in high energy physics experiments has been a subject of intense development over the past few years. Typical applications call for the detection of minimum ionizing particles with position measurement accuracy of 10 μm in each detector plane. The most straightforward detector geometry is that in which one of the collecting electrodes is subdivided into closely spaced strips, giving a high degree of segmentation in one coordinate. Each strip may be read out as a separate detection element, or, alternatively, resistive and/or capacitive coupling between adjacent strips may be exploited to interpolate the position via charge division measrurements. With readout techniques that couple several strips, the numer of readout channels can, in principle, be reduced by large factors without sacrificing the intrinsic position accuracy. The testing of individual strip properties and charge division between strips has been carried out with minimum ionizing particles or beams for the most part except in one case which used alphs particless scans. This paper describes the use of a highly collimated MeV proton beam for studies of the position sensing properties of representative one dimensional strip detectors

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

Knock-on electrons in WA98 silicon drift detector

International Nuclear Information System (INIS)

Eliseev, S.

1997-01-01

Silicon Drift Detector is used to estimate production of knock-on electrons created by passage of 158 GeV /u fully stripped Pb ion through thick lead target. Analysed data were collected in 1995 during Pb+Pb run in WA98 heavy ion experiment at CERN SPS. Information from WA98 Cherenkov beam counter makes it possible to classify events according to number of additional Pb ions which have during detector's read-out time passed through the target without nuclear interaction. Events with one and none pile-up ion are used for statistical separation of knock-on electrons from all detected charged particles. Resulting inclusive spectra of knock-on electrons are compared with GRANT simulations and good agreement is found. (author)

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

International Nuclear Information System (INIS)

Ricq, St.

1999-01-01

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

Energy Technology Data Exchange (ETDEWEB)

CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

2007-05-04

One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

Electron injection in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

1990-01-01

The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. 5 refs., 11 figs

Design and Measurement of a Low-Noise 64-Channels Front-End Readout ASIC for CdZnTe Detectors

Energy Technology Data Exchange (ETDEWEB)

Gan, Bo; Wei, Tingcun; Gao, Wu; Liu, Hui; Hu, Yann [School of Computer Science and Technology, Northwestern Polytechnical University, Xi' an (China)

2015-07-01

Cadmium zinc telluride (CdZnTe) detectors, as one of the principal detectors for the next-generation X-ray and γ-ray imagers, have high energy resolution and supporting electrode patterning in the radiation environment at room-temperature. In the present, a number of internationally renowned research institutions and universities are actively using these detector systems to carry out researches of energy spectrum analysis, medical imaging, materials characterization, high-energy physics, nuclear plant monitoring, and astrophysics. As the most important part of the readout system for the CdZnTe detector, the front-end readout application specific integrated circuit (ASIC) would have an important impact on the performances of the whole detector system. In order to ensure the small signal to noise ratio (SNR) and sufficient range of the output signal, it is necessary to design a front-end readout ASIC with very low noise and very high dynamic range. In addition, radiation hardness should be considered when the detectors are utilized in the space applications and high energy physics experiments. In this paper, we present measurements and performances of a novel multi-channel radiation-hardness low-noise front-end readout ASIC for CdZnTe detectors. The readout circuits in each channel consist of charge sensitive amplifier, leakage current compensation circuit (LCC), CR-RC shaper, S-K filter, inverse proportional amplifier, peak detect and hold circuit (PDH), discriminator and trigger logic, time sequence control circuit and driving buffer. All of 64 readout channels' outputs enter corresponding inputs of a 64 channel multiplexer. The output of the mux goes directly out of the chip via the output buffer. The 64-channel readout ASIC is implemented using the TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 2.7 mm x 8 mm. At room temperature, the equivalent noise level of a typical channel reaches 66 e{sup -} (rms) at zero farad for a

Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

International Nuclear Information System (INIS)

Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

2003-01-01

The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

Development of floating strip micromegas detectors

Energy Technology Data Exchange (ETDEWEB)

Bortfeldt, Jonathan

2014-04-28

Micromegas are high-rate capable, high-resolution micro-pattern gaseous detectors. Square meter sized resistive strip Micromegas are foreseen as replacement of the currently used precision tracking detectors in the Small Wheel, which is part of the forward region of the ATLAS muon spectrometer. The replacement is necessary to ensure tracking and triggering performance of the muon spectrometer after the luminosity increase of the Large Hadron Collider beyond its design value of 10{sup 34} cm{sup -2}s{sup -1} around 2020. In this thesis a novel discharge tolerant floating strip Micromegas detector is presented and described. By individually powering copper anode strips, the effects of a discharge are confined to a small region of the detector. This reduces the impact of discharges on the efficiency by three orders of magnitude, compared to a standard Micromegas. The physics of the detector is studied and discussed in detail. Several detectors are developed: A 6.4 x 6.4 cm{sup 2} floating strip Micromegas with exchangeable SMD capacitors and resistors allows for an optimization of the floating strip principle. The discharge behavior is investigated on this device in depth. The microscopic structure of discharges is quantitatively explained by a detailed detector simulation. A 48 x 50 cm{sup 2} floating strip Micromegas is studied in high energy pion beams. Its homogeneity with respect to pulse height, efficiency and spatial resolution is investigated. The good performance in high-rate background environments is demonstrated in cosmic muon tracking measurements with a 6.4 x 6.4 cm{sup 2} floating strip Micromegas under lateral irradiation with 550 kHz 20 MeV proton beams. A floating strip Micromegas doublet with low material budget is developed for ion tracking without limitations from multiple scattering in imaging applications during medical ion therapy. Highly efficient tracking of 20 MeV protons at particle rates of 550 kHz is possible. The reconstruction of the

Development of floating strip micromegas detectors

International Nuclear Information System (INIS)

Bortfeldt, Jonathan

2014-01-01

Micromegas are high-rate capable, high-resolution micro-pattern gaseous detectors. Square meter sized resistive strip Micromegas are foreseen as replacement of the currently used precision tracking detectors in the Small Wheel, which is part of the forward region of the ATLAS muon spectrometer. The replacement is necessary to ensure tracking and triggering performance of the muon spectrometer after the luminosity increase of the Large Hadron Collider beyond its design value of 10 34 cm -2 s -1 around 2020. In this thesis a novel discharge tolerant floating strip Micromegas detector is presented and described. By individually powering copper anode strips, the effects of a discharge are confined to a small region of the detector. This reduces the impact of discharges on the efficiency by three orders of magnitude, compared to a standard Micromegas. The physics of the detector is studied and discussed in detail. Several detectors are developed: A 6.4 x 6.4 cm 2 floating strip Micromegas with exchangeable SMD capacitors and resistors allows for an optimization of the floating strip principle. The discharge behavior is investigated on this device in depth. The microscopic structure of discharges is quantitatively explained by a detailed detector simulation. A 48 x 50 cm 2 floating strip Micromegas is studied in high energy pion beams. Its homogeneity with respect to pulse height, efficiency and spatial resolution is investigated. The good performance in high-rate background environments is demonstrated in cosmic muon tracking measurements with a 6.4 x 6.4 cm 2 floating strip Micromegas under lateral irradiation with 550 kHz 20 MeV proton beams. A floating strip Micromegas doublet with low material budget is developed for ion tracking without limitations from multiple scattering in imaging applications during medical ion therapy. Highly efficient tracking of 20 MeV protons at particle rates of 550 kHz is possible. The reconstruction of the track inclination in a single

Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

Energy Technology Data Exchange (ETDEWEB)

Lu, P.H., E-mail: pinghe.lu@redlen.com; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A.W.

2015-06-01

This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

International Nuclear Information System (INIS)

Oldorf, Christian

2015-08-01

COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular 116 Cd, 106 Cd and 130 Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of 116 Cd, a background rate in the order of 10 -3 counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10 26 years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

Development of flat panel X-ray detector utilizing a CdZnTe film as conversion layer

International Nuclear Information System (INIS)

Tokuda, Satoshi; Kishihara, Hiroyuki; Kaino, Masatomo; Sato, Toshiyuki

2006-01-01

A polycrystalline CdZnTe film formed by the CSS (closed-spaced sublimation) method is one of the most promising materials as a conversion layer of next-generation highly efficient flat-panel X-ray detectors. Therefore, we have developed a prototype of a new flat-panel X-ray detector (a sensing region of 3 inches by 3 inches) with the film and evaluated its commercial feasibility. This paper describes evaluation of the physical and imaging properties of the prototype and explains the features of the CdZnTe film and the construction, specifications, and fabrication procedures of the prototype. Also included in this paper are formation of a semiconductor thin film barrier layer by the CBD (chemical bath deposition) method and conjunction of a sensor substrate and a TFT array substrate with the bump electrodes formed by screen printing, both of which we have developed during the course of the development of the prototype. (author)

Silicon drift detectors, present and future prospects

Science.gov (United States)

Takahashi, J.; Bellwied, R.; Beuttenmuller, R.; Caines, H.; Chen, W.; Dyke, H.; Hoffmann, G. W.; Humanic, T.; Kotov, I.; Kuczewski, P.; Leonhardt, W.; Li, Z.; Lynn, D.; Minor, R.; Munhoz, M.; Ott, G.; Pandey, S. U.; Schambach, J.; Soja, R.; Sugarbaker, E.; Willson, R. M.

2001-04-01

Silicon drift detectors provide unambiguous two-dimensional position information for charged particle detection with a single detector layer. A large area silicon drift detector was developed for the inner tracking detector of the STAR experiment at RHIC. In this paper, we discuss the lessons learned and the future prospects of this technology.

Strip detector for the ATLAS detector upgrade for the High-Luminosity LHC

CERN Document Server

Veloce, Laurelle Maria; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High Luminosity LHC, scheduled for 2025. The expected radiation damage at an integrated luminosity of 3000fb-1 will require the tracking detectors to withstand hadron fluencies to over 1x1016 1 MeV neutron equivalent per cm2. With the addition of increased readout rates, the existing Inner Detector will have to be replaced by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The ITk strip detector consists of a four-layer barrel and a forward region composed of six discs on each side of the barrel. The current prototyping phase has resulted in the ITk Strip Detector Technical Design Report (TDR), which starts the pre-production readiness phase at the involved institutes. In this contribution we present the design of the ITk Strip Detector and current status of R&D of various detector components.

Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

International Nuclear Information System (INIS)

Castoldi, A.; Rehak, P.

1995-01-01

This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

Characterization of a large-format, fine-pitch CdZnTe pixel detector for the HEFT balloon-Borne experiment

OpenAIRE

Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.

2004-01-01

We have developed a large-format CdZnTe pixel detector with custom, low-noise ASIC readout, for astrophysical applications. In particular, this detector is targeted for use in the High-Energy Focusing Telescope (HEFT), a balloon-borne experiment with focusing optics for 20-70 keV. The detector is a 24 X 44 pixel array of 498-µm pitch. As a focal plane detector, uniformity from pixel to pixel is very desirable. In this paper, we present the characterization of some detector properties for the ...

The charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Boehringer, T.; Hubbeling, L.; Weilhammer, P.; Kemmer, J.; Koetz, U.; Riebesell, M.; Belau, E.; Klanner, R.; Lutz, G.; Neugebauer, E.; Seebrunner, H.J.; Wylie, A.

1983-02-01

The charge collection in silicon detectors has been studied, by measuring the response to high-energy particles of a 20μm pitch strip detector as a function of applied voltage and magnetic field. The results are well described by a simple model. The model is used to predict the spatial resolution of silicon strip detectors and to propose a detector with optimized spatial resolution. (orig.)

Evaluation of CdZnTe as neutron detector around medical accelerators

International Nuclear Information System (INIS)

Martin-Martin, A.; Iniguez, M. P.; Luke, P. N.; Barquero, R.; Lorente, A.; Morchon, J.; Gallego, E.; Quincoces, G.; Marti-Climent, J. M.

2009-01-01

The operation of electron linear accelerators (LINACs) and cyclotrons can produce a mixed gamma-neutron field composed of energetic neutrons coming directly from the source and scattered lower energy neutrons. The thermal neutron detection properties of a non-moderated coplanar-grid CdZnTe (CZT) gamma-ray detector close to an 18 MV electron LINAC and an 18 MeV proton cyclotron producing the radioisotope 18 F for positron emission tomography are investigated. The two accelerators are operated at conditions producing similar thermal neutron fluence rates of the order of 104 cm -2 s -1 at the measurement locations. The counting efficiency of the CZT detector using the prompt 558 keV photopeak following 113 Cd thermal neutron capture is evaluated and a good neutron detection performance is found at the two installations. (authors)

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

CdZnTe background measurements at balloon altitudes with PoRTIA

International Nuclear Information System (INIS)

Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C.M.; Tueller, J.; Teegarden, B.

2004-01-01

Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS NaI anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of NaI. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coaxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn, and Te nuclei that radiatively decay; calculations are presented to determine the relative contribution of these decays to the fully shielded CdZnTe background measured by PoRTIA

Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity

International Nuclear Information System (INIS)

Lee, E.Y.; Brunett, B.A.; Olsen, R.W.; Van Scyoc, J.M. III; Hermon, H.; James, R.B.

1998-01-01

The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10 -16 cm 2 is detected and three hole traps having energies of 70 ± 20 meV, 105 ± 30 meV and 694 ± 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence

Characterisation of Redlen high-flux CdZnTe

Science.gov (United States)

Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

2017-12-01

CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

The honeycomb strip chamber: A two coordinate and high precision muon detector

International Nuclear Information System (INIS)

Tolsma, H.P.T.

1996-01-01

This thesis describes the construction and performance of the Honeycomb Strip Chamber (HSC). The HSC offers several advantages with respect to classical drift chambers and drift tubes. The main features of the HSC are: -The detector offers the possibility of simultaneous readout of two orthogonal coordinates with approximately the same precision. - The HSC technology is optimised for mass production. This means that the design is modular (monolayers) and automisation of most of the production steps is possible (folding and welding machines). - The technology is flexible. The cell diameter can easily be changed from a few millimetres to at least 20 mm by changing the parameters in the computer programme of the folding machine. The number of monolayers per station can be chosen freely to the demands of the experiment. -The honeycomb structure gives the detector stiffness and makes it self supporting. This makes the technology a very transparent one in terms of radiation length which is important to prevent multiple scattering of high energetic muons. - The dimensions of the detector are defined by high precision templates. Those templates constrain for example the overall tolerance on the wire positions to 20 μm rms. Reproduction of the high precision assembly of the detector is thus guaranteed. (orig.)

The honeycomb strip chamber: A two coordinate and high precision muon detector

Energy Technology Data Exchange (ETDEWEB)

Tolsma, H P.T.

1996-04-19

This thesis describes the construction and performance of the Honeycomb Strip Chamber (HSC). The HSC offers several advantages with respect to classical drift chambers and drift tubes. The main features of the HSC are: -The detector offers the possibility of simultaneous readout of two orthogonal coordinates with approximately the same precision. - The HSC technology is optimised for mass production. This means that the design is modular (monolayers) and automisation of most of the production steps is possible (folding and welding machines). - The technology is flexible. The cell diameter can easily be changed from a few millimetres to at least 20 mm by changing the parameters in the computer programme of the folding machine. The number of monolayers per station can be chosen freely to the demands of the experiment. -The honeycomb structure gives the detector stiffness and makes it self supporting. This makes the technology a very transparent one in terms of radiation length which is important to prevent multiple scattering of high energetic muons. - The dimensions of the detector are defined by high precision templates. Those templates constrain for example the overall tolerance on the wire positions to 20 {mu}m rms. Reproduction of the high precision assembly of the detector is thus guaranteed. (orig.).

Semiconductor X-ray detectors

CERN Document Server

Lowe, Barrie Glyn

2014-01-01

Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

Cathode readout with stripped resistive drift tubes

International Nuclear Information System (INIS)

Bychkov, V.N.; Kekelidze, G.D.; Novikov, E.A.; Peshekhonov, V.D.; Shafranov, M.D.; Zhiltsov, V.E.

1995-01-01

A straw tube drift chamber prototype has been constructed and tested. The straw tube material is mylar film covered with a carbon layer with a resistivity of 0.5, 30 and 70 kΩ/□. Both the anode wire and the cathode strip signals were detected to study the behaviour of the chamber in the presence of X-ray ionization. The construction and the results of the study are presented. (orig.)

Cathode readout with stripped resistive drift tubes

Science.gov (United States)

Bychkov, V. N.; Kekelidze, G. D.; Novikov, E. A.; Peshekhonov, V. D.; Shafranov, M. D.; Zhiltsov, V. E.

1995-12-01

A straw tube drift chamber prototype has been constructed and tested. The straw tube material is mylar film covered with a carbon layer with a resistivity of 0.5, 30 and 70 kΩ/□. Both the anode wire and the cathode strip signals were detected to study the behaviour of the chamber in the presence of X-ray ionization. The construction and the results of the study are presented.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Degradation of charge sharing after neutron irradiation in strip silicon detectors with different geometries

International Nuclear Information System (INIS)

Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Huse, T.; Tsurin, I.; Wormald, M.

2013-01-01

The aim of the CERN/RD50 collaboration is the improvement of the radiation tolerance of semiconductor detectors for future experiments at high-luminosity colliders. In the RD50 framework, evidence of enhanced signal charge in severely irradiated silicon detectors (diodes, segmented planar and 3D devices) was found. The underlying mechanism was labelled charge multiplication. This has been one of the most exciting results from the research activity of RD50 because it could allow for a greatly extended radiation tolerance, if the mechanism is to be found controllable and tuneable. The charge multiplication mechanism is governed by impact ionisation from electrons drifting in high electric field. The electric field profile is influenced by the geometry of the implanted electrodes. In order to investigate the influence of the diode implantation geometry on charge multiplication, the RD50 collaboration has commissioned the production of miniature microstrip silicon sensors with various choices of strip pitch and strip width over pitch (w/p) ratios. Moreover, some of the sensors were produced interleaving readout strips with dummy intermediate ones in order to modify the electric field profile. These geometrical solutions can influence both charge multiplication and charge sharing between adjacent strips. The initial results of this study are here presented

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

International Nuclear Information System (INIS)

Oliveira, Icimone B.

2011-01-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

2011-07-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Efficiency measurements for 3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich, E-mail: ulrich.parzefall@physik.uni-freiburg.d [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Dalla Betta, Gian-Franco [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Koehler, Michael; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2010-11-01

Silicon strip detectors are widely used as part of the inner tracking layers in particle physics experiments. For applications at the luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, silicon detectors with extreme radiation hardness are required. The 3D detector design, where electrodes are processed from underneath the strips into the silicon bulk material, provides a way to enhance the radiation tolerance of standard planar silicon strip detectors. Detectors with several innovative 3D designs that constitute a simpler and more cost-effective processing than the 3D design initially proposed were connected to read-out electronics from LHC experiments and subsequently tested. Results on the amount of charge collected, the noise and the uniformity of charge collection are given.

Principle and applications of Controlled-Drift Detectors

International Nuclear Information System (INIS)

Castoldi, A.; Guazzoni, C.; Hartmann, R.; Strueder, L.

2007-01-01

The Controlled-Drift Detector is a fully depleted silicon detector that allows 2D position sensing and energy spectroscopy of X-rays in the range 0.5-30 keV with imaging capability up to 100 kframe/s, event timing of few ns and limited readout channels. In this paper we review the Controlled-Drift Detector operating principle and we present its applications in X-ray absorption imaging and in Compton electrons tracking

Microsecond-scale X-ray imaging with Controlled-Drift Detectors

International Nuclear Information System (INIS)

Castoldi, A.; Galimberti, A.; Guazzoni, C.; Rehak, P.; Strueder, L.

2006-01-01

The Controlled-Drift Detector is a fully-depleted silicon detector that allows 2-D position sensing and energy spectroscopy of X-rays in the range 0.5-20keV with excellent time resolution (few tens of μs) and limited readout channels. In this paper we review the Controlled-Drift Detector operating principle and we present the X-ray imaging and spectroscopic capabilities of Controlled Drift Detectors in microsecond-scale experiments and the more relevant applications fields

Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

International Nuclear Information System (INIS)

Montemont, Guillaume

2000-01-01

This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

Simulation of the anode structure for capacitive frisch grid CdZnTe detectors

International Nuclear Information System (INIS)

Min Jiahua; Shi Zhubin; Sang Wenbin; Zhao Hengyu; Teng Jianyong; Qian Yongbiao; Liu Jishan

2009-01-01

CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution. The anode structrure might have an important role in improving the weighting potential distribution of the detectors. In this paper, four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation, based on a 3-dimensional weighting potential analysis. The weighting potential distributions in modified anode devices (Model B, C and D) are optimized compared with a square device (Model A). In model C and D, the abrupt weighting potential can be well modified. However, with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D, the weighting potential does not vary too much. (authors)

ALICE Silicon Strip Detector

CERN Multimedia

Nooren, G

2013-01-01

The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

Science.gov (United States)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

International Nuclear Information System (INIS)

Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

2014-01-01

The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

Performance of silicon drift detectors in a magnetic field

International Nuclear Information System (INIS)

Castoldi, A.; Gatti, E.; Manzari, V.; Rehak, P.

1997-01-01

A study of the properties of silicon drift detectors in a magnetic field was carried out. A silicon drift detector with 41 anodes, providing unambiguous x and y position information, was used for measurements. Studies were done in three principal orientations of the detector relative to the direction of the magnetic field. The magnetic field was varied between 0 and 0.7 T and the drift field between 300 and 600 V/cm. Basic agreement with the theory of electron transport in semiconductors in a magnetic field was found. The transport properties of electrons in a magnetic field can be described by a mobility matrix. The components of the matrix depend on the electron mobility, Hall mobility and on the vector of the magnetic field. The precision of measurement was better than 0.2% for most of the parameters. For the electric field of a silicon drift detector, there is a first-order effect of the magnetic field only in one out of three principal directions. In this direction, the plane of the detector is perpendicular to the magnetic field and electrons drift at an angle α relative to the direction of the drift field. In two other principal directions, which are more important for tracking of the particles with drift detectors, there are no first-order magnetic effects. (orig.)

Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

Science.gov (United States)

Genocchi, B.; Pickford Scienti, O.; Darambara, DG

2017-05-01

Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

3D silicon strip detectors

International Nuclear Information System (INIS)

Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-06-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

Instrumentation effects on U and Pu CBNM standards spectra quality measured on a 500 mm3 CdZnTe and a 2×2 inch LaBr3 detectors

Science.gov (United States)

Meleshenkovskii, I.; Borella, A.; Van der Meer, K.; Bruggeman, M.; Pauly, N.; Labeau, P. E.; Schillebeeckx, P.

2018-01-01

Nowadays, there is interest in developing gamma-ray measuring devices based on the room temperature operated medium resolution detectors such as semiconductor detectors of the CdZnTe type and scintillators of the LaBr3 type. This is true also for safeguards applications and the International Atomic Energy Agency (IAEA) has launched a project devoted to the assessment of medium resolution gamma-ray spectroscopy for the verification of the isotopic composition of U and Pu bearing samples. This project is carried out within the Non-Destructive Assay Working Group of the European Safeguards Research and Development Association (ESARDA). In this study we analyze medium resolution spectra of U and Pu standards with the aim to develop an isotopic composition determination algorithm, particularly suited for these types of detectors. We show how the peak shape of a CdZnTe detector is influenced by the instrumentation parameters. The experimental setup consisted of a 500 mm3 CdZnTe detector, a 2×2 inch LaBr3 detector, two types of measurement instrumentation - an analogue one and a digital one, and a set of certified samples - a 207Bi point source and U and Pu CBNM standards. The results of our measurements indicate that the lowest contribution to the peak asymmetry and thus the smallest impact on the resolution of the 500 mm3 CdZnTe detector was achieved with the digital MCA. Analysis of acquired spectra allowed to reject poor quality measurement runs and produce summed spectra files with the least impact of instrumentation instabilities. This work is preliminary to further studies concerning the development of an isotopic composition determination algorithm particularly suited for CZT and LaBr3 detectors for safeguards applications.

Strip detector for the ATLAS detector upgrade for the high-luminosity LHC

CERN Document Server

Madaffari, Daniele; The ATLAS collaboration

2017-01-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential of the LHC through a sizeable increase in the luminosity, reaching 1x10$^{35}$ cm$^{-2}$s$^{-1}$ after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at an integrated luminosity of 3000 fb$^{-1}$, requiring the tracking detectors to withstand hadron fluencies to over 1x10$^{16}$ 1 MeV neutron equivalent per cm$^2$. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk), which will consist of both strip and pixelated silicon detectors. The physics motivations, required performance characteristics and basic design of the proposed upgrade of the strip detector will be a subject of this talk. Present ideas and solutions for the strip detector and current research and development program will be discussed.

Comparison of CdZnTe neutron detector models using MCNP6 and Geant4

Science.gov (United States)

Wilson, Emma; Anderson, Mike; Prendergasty, David; Cheneler, David

2018-01-01

The production of accurate detector models is of high importance in the development and use of detectors. Initially, MCNP and Geant were developed to specialise in neutral particle models and accelerator models, respectively; there is now a greater overlap of the capabilities of both, and it is therefore useful to produce comparative models to evaluate detector characteristics. In a collaboration between Lancaster University, UK, and Innovative Physics Ltd., UK, models have been developed in both MCNP6 and Geant4 of Cadmium Zinc Telluride (CdZnTe) detectors developed by Innovative Physics Ltd. Herein, a comparison is made of the relative strengths of MCNP6 and Geant4 for modelling neutron flux and secondary γ-ray emission. Given the increasing overlap of the modelling capabilities of MCNP6 and Geant4, it is worthwhile to comment on differences in results for simulations which have similarities in terms of geometries and source configurations.

Characterising large area silicon drift detectors with MOS injectors

International Nuclear Information System (INIS)

Bonvicini, V.; Rashevsky, A.; Vacchi, A.

1999-01-01

In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

New developments in double sided silicon strip detectors

International Nuclear Information System (INIS)

Becker, H.; Boulos, T.; Cattaneo, P.; Dietl, H.; Hauff, D.; Holl, P.; Lange, E.; Lutz, G.; Moser, H.G.; Schwarz, A.S.; Settles, R.; Struder, L.; Kemmer, J.; Buttler, W.

1990-01-01

A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given

Synchrotron applications of pixel and strip detectors at Diamond Light Source

International Nuclear Information System (INIS)

Marchal, J.; Tartoni, N.; Nave, C.

2009-01-01

A wide range of position-sensitive X-ray detectors have been commissioned on the synchrotron X-ray beamlines operating at the Diamond Light Source in UK. In addition to mature technologies such as image-plates, CCD-based detectors, multi-wire and micro-strip gas detectors, more recent detectors based on semiconductor pixel or strip sensors coupled to CMOS read-out chips are also in use for routine synchrotron X-ray diffraction and scattering experiments. The performance of several commercial and developmental pixel/strip detectors for synchrotron studies are discussed with emphasis on the image quality achieved with these devices. Examples of pixel or strip detector applications at Diamond Light Source as well as the status of the commissioning of these detectors on the beamlines are presented. Finally, priorities and ideas for future developments are discussed.

The depletion properties of silicon microstrip detectors with variable strip pitch

International Nuclear Information System (INIS)

Krizmanic, J.F.

1994-01-01

We have investigated the depletion properties of trapezoidal shaped silicon microstrip detectors which have variable strip pitch. Four types of detectors were examined: three detectors have constant strip width and a fourth has a varying strip width. The detectors are single sided with readout performed via p + strips. The depletion properties of the devices were measured using two different methods. The first used capacitance versus voltage measurements, while the second used a 1060 nm wavelength laser coupled to a single mode fiber with a mode field diameter less than 10 μm. The small laser spot size allowed for the depletion depth to be measured in a localized area of the detector. The laser induced charge on an electrode was measured as a function of reverse bias voltage using a sensitive charge preamplifier. The depletion voltages of the detectors demonstrate a strong dependence upon the ratio of strip width to strip pitch. Moreover, these measurements show that a large value of this ratio yields a lower depletion voltage and vice versa. (orig.)

Purification of CdZnTe by electromigration

Science.gov (United States)

Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

2015-04-01

Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10-2 cm2/V, compared with that of 1.4 × 10-3 cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

Strip type radiation detector and method of making same

International Nuclear Information System (INIS)

Jantsch, O.; Feigt, I.; Willig, W.R.

1976-01-01

An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion is described. The strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed

Clustering method to process signals from a CdZnTe detector

International Nuclear Information System (INIS)

Zhang, Lan; Takahashi, Hiroyuki; Fukuda, Daiji; Nakazawa, Masaharu

2001-01-01

The poor mobility of holes in a compound semiconductor detector results in the imperfect collection of the primary charge deposited in the detector. Furthermore the fluctuation of the charge loss efficiency due to the change in the hole collection path length seriously degrades the energy resolution of the detector. Since the charge collection efficiency varies with the signal waveform, we can expect the improvement of the energy resolution through a proper waveform signal processing method. We developed a new digital signal processing technique, a clustering method which derives typical patterns containing the information on the real situation inside a detector from measured signals. The obtained typical patterns for the detector are then used for the pattern matching method. Measured signals are classified through analyzing the practical waveform variation due to the charge trapping, the electric field and the crystal defect etc. Signals with similar shape are placed into the same cluster. For each cluster we calculate an average waveform as a reference pattern. Using these reference patterns obtained from all the clusters, we can classify other measured signal waveforms from the same detector. Then signals are independently processed according to the classified category and form corresponding spectra. Finally these spectra are merged into one spectrum by multiplying normalization coefficients. The effectiveness of this method was verified with a CdZnTe detector of 2 mm thick and a 137 Cs gamma-ray source. The obtained energy resolution as improved to about 8 keV (FWHM). Because the clustering method is only related to the measured waveforms, it can be applied to any type and size of detectors and compatible with any type of filtering methods. (author)

Study and modelling of the new generation Cd(Zn)Te X and gamma-ray detectors for space applications

International Nuclear Information System (INIS)

Dirks, Bob-Petrus-Franciscus

2006-01-01

The scientific astrophysics community needs a new instrument to gain more insight in the origin of the cosmic X-ray background, the physics of black holes and particle acceleration mechanisms in the energy range between 0.5 to 80 keV. Existing instruments like Chandra and XMM-Newton show very good results up to ∼10 keV but lack sufficient sensitivity above this value. In order to keep or improve the same performances up to ∼80 keV, grazing incidence mirrors with a large focal length of at least 20 m should be used. Since satellites this big cannot be launched with existing launchers, the mirror and detector must be placed on two different satellites flying in formation. The Simbol-X space mission will be the first project of this type. A high sensitivity at 80 keV requires not only a long focal length but also a detection unit with high spatial resolution, using detectors that are still efficient at these relatively high energies. CEA/Saclay/DAPNIA is developing this crucial element for the Simbol-X space mission. The imager consists of several modules, each built from individual X-ray mini-cameras. A single camera is a hybridisation of custom read-out electronics connected to a Cd(Zn)Te semiconductor crystal. The ensemble must be able to efficiently detect photons of up to 80 keV with an energy resolution of ∼1.3 keV (FWHM) at 68 keV. Furthermore it must be equipped with small pixels (∼500*500 μm"2) to attain the desired spatial resolution of 15 arcsec. In order to reach a good sensitivity and energy resolution, ultra-low noise read-out electronics in combination with high-quality semiconductor crystals are mandatory. The read-out electronics, baptised IDeF-X (Imaging Detector Front-end for X-rays), is also developed by CEA/Saclay. A thorough understanding of its functioning as well as its testing forms a part of this work. The spectroscopic performance of the detector is directly related to the electronics noise. The noise characteristics of the ASIC are

The Argonne silicon strip-detector array

Energy Technology Data Exchange (ETDEWEB)

Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

1992-08-01

Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

ATLAS ITk Strip Detector for High-Luminosity LHC

CERN Document Server

Kroll, Jiri; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High-Luminosity LHC that is scheduled for 2026. The expected peak instantaneous luminosity up to 7.5E34 per second and cm2 corresponding to approximately 200 inelastic proton-proton interactions per beam crossing, radiation damage at an integrated luminosity of 3000/fb and hadron fluencies over 1E16 1 MeV neutron equivalent per cm2, as well as fast hardware tracking capability that will bring Level-0 trigger rate of a few MHz down to a Level-1 trigger rate below 1 MHz require a replacement of existing Inner Detector by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The current prototyping phase, that is working with ITk Strip Detector consisting of a four-layer barrel and a forward region composed of six discs on each side of the barrel, has resulted in the ATLAS ITk Strip Detector Technical Design Report (TDR), which starts the pre-production readiness phase at the ...

Fabrication of double-sided thallium bromide strip detectors

Energy Technology Data Exchange (ETDEWEB)

Hitomi, Keitaro, E-mail: keitaro.hitomi@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Nagano, Nobumichi [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Onodera, Toshiyuki [Department of Electronics and Intelligent Systems, Tohoku Institute of Technology, Sendai 982-8577 (Japan); Kim, Seong-Yun; Ito, Tatsuya; Ishii, Keizo [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

2016-07-01

Double-sided strip detectors were fabricated from thallium bromide (TlBr) crystals grown by the traveling-molten zone method using zone-purified materials. The detectors had three 3.4-mm-long strips with 1-mm widths and a surrounding electrode placed orthogonally on opposite surfaces of the crystals at approximately 6.5×6.5 mm{sup 2} in area and 5 mm in thickness. Excellent charge transport properties for both electrons and holes were observed from the TlBr crystals. The mobility-lifetime products for electrons and holes in the detector were measured to be ~3×10{sup −3} cm{sup 2}/V and ~1×10{sup −3} cm{sup 2}/V, respectively. The {sup 137}Cs spectra corresponding to the gamma-ray interaction position were obtained from the detector. An energy resolution of 3.4% of full width at half maximum for 662-keV gamma rays was obtained from one “pixel” (an intersection of the strips) of the detector at room temperature.

ATLAS ITk Strip Detector for High-Luminosity LHC

CERN Document Server

Kroll, Jiri; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High-Luminosity LHC that is scheduled for 2026. The expected peak instantaneous luminosity up to $7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$ corresponding to approximately 200 inelastic proton-proton interactions per beam crossing, radiation damage at an integrated luminosity of $3000\\;\\mathrm{fb}^{-1}$ and hadron fluencies over $2\\times10^{16}\\;\\mathrm{n}_{\\mathrm{eq}}/\\mathrm{cm}^{2}$, as well as fast hardware tracking capability that will bring Level-0 trigger rate of a few MHz down to a Level-1 trigger rate below 1 MHz require a replacement of existing Inner Detector by an all-silicon Inner Tracker with a pixel detector surrounded by a strip detector. The current prototyping phase, that is working with ITk Strip Detector consisting of a four-layer barrel and a forward region composed of six disks on each side of the barrel, has resulted in the ATLAS Inner Tracker Strip Detector Technical Design R...

A new strips tracker for the upgraded ATLAS ITk detector

Science.gov (United States)

David, C.

2018-01-01

The ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the fluences and radiation levels will be higher by as much as a factor of ten. The new sub-detectors must thus be faster, of larger area, more segmented and more radiation hard while the amount of inactive material should be minimized and the power supply to the front-end systems should be increased. For those reasons, the current inner tracker of the ATLAS detector will be fully replaced by an all-silicon tracking system that consists of a pixel detector at small radius close to the beam line and a large area strip tracker surrounding it. This document gives an overview of the design of the strip inner tracker (Strip ITk) and summarises the intensive R&D activities performed over the last years by the numerous institutes within the Strips ITk collaboration. These studies are accompanied with a strong prototyping effort to contribute to the optimisation of the Strip ITk's structure and components. This effort culminated recently in the release of the ATLAS Strips ITk Technical Design Report (TDR).

Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

International Nuclear Information System (INIS)

Abdullah, J.; Yahya, R.

2007-01-01

Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented

Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

Science.gov (United States)

Abdullah, J.; Yahya, R.

2007-05-01

Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

Organic Scintillator Detector Response Simulations with DRiFT

Energy Technology Data Exchange (ETDEWEB)

Andrews, Madison Theresa [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Bates, Cameron Russell [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mckigney, Edward Allen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Rising, Michael Evan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pinilla, Maria Isabel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Solomon, Jr., Clell Jeffrey [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Sood, Avneet [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-12-19

Accurate detector modeling is a requirement to design systems in many non-proliferation scenarios; by determining a Detector’s Response Function (DRF) to incident radiation, it is possible characterize measurements of unknown sources. DRiFT is intended to post-process MCNP® output and create realistic detector spectra. Capabilities currently under development include the simulation of semiconductor, gas, and (as is discussed in this work) scintillator detector physics. Energy spectra and pulse shape discrimination (PSD) trends for incident photon and neutron radiation have been reproduced by DRiFT.

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

The present ATLAS silicon strip (SCT) and transition radiation (TRT) trackers will be replaced with new silicon strip detectors, as part of the Inner Tracker System (ITK), for the Phase-2 upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs to establish radiation harder strip detectors that can survive in a radiation level up to 3000 fb-1 of integrated luminosity based on n+-on-p microstrip detector. We describe main specifications for this year’s sensor fabrication, followed by a description of possible module integration schema

Fabrication of silicon strip detectors using a step-and-repeat lithography system

International Nuclear Information System (INIS)

Holland, S.

1991-11-01

In this work we describe the use of a step-and-repeat lithography system (stepper) for the fabrication of silicon strip detectors. Although the field size of the stepper is only 20 mm in diameter, we have fabricated much larger detectors by printing a repetitive strip detector pattern in a step-and-repeat fashion. The basic unit cell is 7 mm in length. The stepper employs a laser interferometer for stage placement, and the resulting high precision allows one to accurately place the repetitive patterns on the wafer. A small overlap between the patterns ensures a continuous strip. A detector consisting of 512 strips on a 50 μm pitch has been fabricated using this technique. The dimensions of the detector are 6.3 cm by 2.56 cm. Yields of over 99% have been achieved, where yield is defined as the percentage of strips with reverse leakage current below 1 nA. In addition to the inherent advantages of a step-and-repeat system, this technique offers great flexibility in the fabrication of large-area strip detectors since the length and width of the detector can be changed by simply reprogramming the stepper computer. Hence various geometry strip detectors can be fabricated with only one set of masks, as opposed to a separate set of masks for each geometry as would be required with a contact or proximity aligner

Infrared LED Array For Silicon Strip Detector Qualification

CERN Document Server

Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

2003-01-01

The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

Purification of CdZnTe by electromigration

International Nuclear Information System (INIS)

Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

2015-01-01

Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10 −2  cm 2 /V, compared with that of 1.4 × 10 −3  cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation

Coordinate determination of high energy charged particles by silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

2002-01-01

The coordinate determination accuracy of minimum ionizing and short-range particles by silicon strip detectors has been considered. The charge collection on neighboring strips of the detector is studied and the influence of diffusion and the electric field distribution on the accuracy of the coordinate determination is analyzed. It has been shown that coordinates of both minimum ionizing and short-range particles can be determined with accuracy to a few microns using silicon strip detectors. 11 refs.; 8 figs

Si-strip photon counting detectors for contrast-enhanced spectral mammography

Science.gov (United States)

Chen, Buxin; Reiser, Ingrid; Wessel, Jan C.; Malakhov, Nail; Wawrzyniak, Gregor; Hartsough, Neal E.; Gandhi, Thulasi; Chen, Chin-Tu; Iwanczyk, Jan S.; Barber, William C.

2015-08-01

We report on the development of silicon strip detectors for energy-resolved clinical mammography. Typically, X-ray integrating detectors based on scintillating cesium iodide CsI(Tl) or amorphous selenium (a-Se) are used in most commercial systems. Recently, mammography instrumentation has been introduced based on photon counting Si strip detectors. The required performance for mammography in terms of the output count rate, spatial resolution, and dynamic range must be obtained with sufficient field of view for the application, thus requiring the tiling of pixel arrays and particular scanning techniques. Room temperature Si strip detector, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel, provided that the sensors are designed for rapid signal formation across the X-ray energy ranges of the application. We present our methods and results from the optimization of Si-strip detectors for contrast enhanced spectral mammography. We describe the method being developed for quantifying iodine contrast using the energy-resolved detector with fixed thresholds. We demonstrate the feasibility of the method by scanning an iodine phantom with clinically relevant contrast levels.

The silicon strip detector at the Mark 2

International Nuclear Information System (INIS)

Jacobsen, R.; Golubev, V.; Lueth, V.; Barnett, B.; Dauncey, P.; Matthews, J.; Adolphsen, C.; Burchat, P.; Gratta, G.; King, M.; Labarga, L.; Litke, A.; Turala, M.; Zaccardelli, C.

1990-04-01

We have installed a Silicon Strip Vertex Detector in the Mark II detector at the Stanford Linear Collider. We report on the performance of the detector during a recent test run, including backgrounds, stability and charged particle tracking. 10 refs., 9 figs

Evaluation of prototype silicon drift detectors

International Nuclear Information System (INIS)

Ellison, J.; Hall, G.; Roe, S.; Lucas, A.

1988-01-01

Operating characteristics of several prototypes of silicon drift detectors are investigated. Detectors are made of unpolished silicon produced by the zone melting method and characterized by n-type conductivity and specific resistance of 3.6-4.6 kOhmxcm. The detectors comprise 40 parallel bands of 200 μm width and 1 cm length separated by 50 μm intervals. Data characterizing the potential distribution near anodes under the operating bias voltage, dependences of capacities and leakage as well as the detector space resolution

Investigation of long drift chambers for a nucleon-decay detector

International Nuclear Information System (INIS)

Price, L.E.; Dawson, J.; Ayres, D.; Denis, R.S.

1981-01-01

The use of long drift chambers for a nucleon-decay detector is discussed as a means of achieving a detector with very fine tracking, but with a modest number of readout channels. Strategies for reducing the attenuation of drifting electrons are considered, particularly the necessity of shaping the electric field to reduce the effects of diffusion and of nearby grounded conductors. Measured results are presented for a chamber with 1 cm drift gap and 50 cm maximum drift distance. The measured attenuation is 12%

THE 15 LAYER SILICON DRIFT DETECTOR TRACKER IN EXPERIMENT 896

International Nuclear Information System (INIS)

Pandey, S.U.

1998-01-01

Large linear silicon drift detectors have been developed and are in production for use in several experiments. Recently 15 detectors were used as a tracking device in BNL-AGS heavy ion experiment (E896). The detectors were successfully operated in a 6.2 T magnetic field. The behavior of the detectors, such as drift uniformity, resolution, and charge collection efficiency are presented. The effect of the environment on the detector performance is discussed. Some results from the experimental run are presented. The detectors performed well in an experimental environment. This is the first tracking application of these detectors

Method in analysis of CdZnTe γ spectrum with artificial neural network

International Nuclear Information System (INIS)

Ai Xianyun; Wei Yixiang; Xiao Wuyun

2005-01-01

The analysis of gamma-ray spectra to identify lines and their intensities usually requires expert knowledge and time consuming calculations with complex fitting functions. CdZnTe detector often exhibits asymmetric peak shape particularly at high energies making peak fitting methods and sophisticated isotope identification programs difficult to use. This paper investigates the use of the neural network to process gamma spectra measured with CdZnTe detector to verify nuclear materials. Results show that the neural network method gives advantages, in particular, when large low-energetic peak tailings are observed. (authors)

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

present ATLAS silicon strip tracker (SCT) and transition radiation tracker(TRT) are to be replaced with new silicon strip detectors as part of the Inner Tracker System (ITK) for the Phase-II upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs based on n+-on-p microstrip detectors to fabricate improved radiation hard strip detectors that can survive the radiation levels corresponding to the integrated luminosity of up to 3000 fb−1. We describe the main specifications for this year’s sensor fabrication and the related R&D results, followed by a description of the candidate schema for module integration.

Ground calibration of the spatial response and quantum efficiency of the CdZnTe hard x-ray detectors for NuSTAR

Science.gov (United States)

Grefenstette, Brian W.; Bhalerao, Varun; Cook, W. Rick; Harrison, Fiona A.; Kitaguchi, Takao; Madsen, Kristin K.; Mao, Peter H.; Miyasaka, Hiromasa; Rana, Vikram

2017-08-01

Pixelated Cadmium Zinc Telluride (CdZnTe) detectors are currently flying on the Nuclear Spectroscopic Telescope ARray (NuSTAR) NASA Astrophysics Small Explorer. While the pixel pitch of the detectors is ≍ 605 μm, we can leverage the detector readout architecture to determine the interaction location of an individual photon to much higher spatial accuracy. The sub-pixel spatial location allows us to finely oversample the point spread function of the optics and reduces imaging artifacts due to pixelation. In this paper we demonstrate how the sub-pixel information is obtained, how the detectors were calibrated, and provide ground verification of the quantum efficiency of our Monte Carlo model of the detector response.

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Silicon Drift Detectors development for position sensing

International Nuclear Information System (INIS)

Castoldi, A.; Guazzoni, C.; Hartmann, R.; Strueder, L.

2007-01-01

Novel Silicon Drift Detectors (SDDs) with multi-linear architecture specifically intended for 2D position sensing and imaging applications are presented and their achievable spatial, energy and time resolution are discussed. The capability of providing a fast timing of the interaction with nanosecond time resolution is a new available feature that allows operating the drift detector in continuous readout mode for coincidence imaging applications either with an external trigger or in self-timing. The application of SDDs with multi-linear architecture to Compton electrons' tracking within a single silicon layer and the achieved experimental results will be discussed

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

Energy Technology Data Exchange (ETDEWEB)

Laakso, M. (Fermi National Accelerator Lab., Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland))

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

International Nuclear Information System (INIS)

Laakso, M.

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N + - strips or the usage of the phenomenon known as the punch-through effect for P + - strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade

Distribution of electric field and charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

1995-01-01

The distribution of electric field in silicon strip detectors is analyzed in the case of dull depletion as well as for partial depletion. Influence of inhomogeneous electric fields on the charge collection and performances of silicon strip detectors is discussed

Spectroscopic measurements with a silicon drift detector having a continuous implanted drift cathode-voltage divider

CERN Document Server

Bonvicini, V; D'Acunto, L; Franck, D; Gregorio, A; Pihet, P; Rashevsky, A; Vacchi, A; Vinogradov, L I; Zampa, N

2000-01-01

A silicon drift detector (SDD) prototype where the drift electrode also plays the role of a high-voltage divider has been realised and characterised for spectroscopic applications at near-room temperatures. Among the advantages of this design, is the absence of metal on the sensitive surface which makes this detector interesting for soft X-rays. The detector prototype has a large sensitive area (2x130 mm sup 2) and the charge is collected by two anodes (butterfly-like detector). The energy resolution of a such a detector has been investigated at near-room temperatures using a commercial, hybrid, low-noise charge-sensitive preamplifier. The results obtained for the X-ray lines from sup 5 sup 5 Fe and sup 2 sup 4 sup 1 Am are presented.

The ATLAS tracker strip detector for HL-LHC

CERN Document Server

Cormier, Kyle James Read; The ATLAS collaboration

2016-01-01

As part of the ATLAS upgrades for the High Luminsotiy LHC (HL-LHC) the current ATLAS Inner Detector (ID) will be replaced by a new Inner Tracker (ITk). The ITk will consist of two main components: semi-conductor pixels at the innermost radii, and silicon strips covering larger radii out as far as the ATLAS solenoid magnet including the volume currently occupied by the ATLAS Transition Radiation Tracker (TRT). The primary challenges faced by the ITk are the higher planned read out rate of ATLAS, the high density of charged particles in HL-LHC conditions for which tracks need to be resolved, and the corresponding high radiation doses that the detector and electronics will receive. The ITk strips community is currently working on designing and testing all aspects of the sensors, readout, mechanics, cooling and integration to meet these goals and a Technical Design Report is being prepared. This talk is an overview of the strip detector component of the ITk, highlighting the current status and the road ahead.

The ATLAS tracker strip detector for HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00512833; The ATLAS collaboration

2017-01-01

As part of the ATLAS upgrades for the High Luminsotiy LHC (HL-LHC) the current ATLAS Inner Detector (ID) will be replaced by a new Inner Tracker (ITk). The ITk will consist of two main components: semi-conductor pixels at the innermost radii, and silicon strips covering larger radii out as far as the ATLAS solenoid magnet including the volume currently occupied by the ATLAS Transition Radiation Tracker (TRT). The primary challenges faced by the ITk are the higher planned read out rate of ATLAS, the high density of charged particles in HL-LHC conditions for which tracks need to be resolved, and the corresponding high radiation doses that the detector and electronics will receive. The ITk strips community is currently working on designing and testing all aspects of the sensors, readout, mechanics, cooling and integration to meet these goals and a Technical Design Report is being prepared. This talk is an overview of the strip detector component of the ITk, highlighting the current status and the road ahead.

Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

CERN Document Server

Lebrun, A; Szabó, J L; Arenas-Carrasco, J; Arlt, R; Dubreuil, A; Esmailpur-Kazerouni, K

2000-01-01

After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm sup 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR)...

A 3D CZT high resolution detector for x- and gamma-ray astronomy

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Zappettini, A.

2014-01-01

At DTU Space we have developed a high resolution three dimensional (3D) position sensitive CZT detector for high energy astronomy. The design of the 3D CZT detector is based on the CZT Drift Strip detector principle. The position determination perpendicular to the anode strips is performed using...

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

International Nuclear Information System (INIS)

Szeles, Csaba

2004-01-01

Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Compton recoil electron tracking with silicon strip detectors

International Nuclear Information System (INIS)

O'Neill, T.J.; Ait-Ouamer, F.; Schwartz, I.; Tumer, O.T.; White, R.S.; Zych, A.D.

1992-01-01

The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described in this paper. The Silicon Compton Recoil Telescope (SCRT) tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm FWHM and 3% at 662 keV, respectively, 'true imaging' can be achieved to provide an order of magnitude improvement in sensitivity to 1.6 x 10 - 6 γ/cm 2 -s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 micron silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

Energy Technology Data Exchange (ETDEWEB)

Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

International Nuclear Information System (INIS)

Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

2015-01-01

Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

Science.gov (United States)

Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

2010-12-21

The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 10⁹ Mcps mm⁻² in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤ 10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous

Evaluation of silicon micro strip detectors with large read-out pitch

International Nuclear Information System (INIS)

Senyo, K.; Yamamura, K.; Tsuboyama, T.; Avrillon, S.; Asano, Y.; Bozek, A.; Natkaniec, Z.; Palka, H.; Rozanska, M.; Rybicki, K.

1996-01-01

For the development of the silicon micro-strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips. (orig.)

Radiation damage measurements on CZT drift strip detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Korsbech, Uffe C C

2003-01-01

from 2 x 10(8) to 60 x 10(8) p(+)/cm(2). Even for the highest fluences, which had a dramatic effect on the spectroscopic performance, we were able to recover the detectors after an appropriate annealing procedure. The radiation damage was studied as a function of depth inside the detector material...... with the proton dose. The radiation contribution to the electron trapping was found to obey the following relation: (mutau(e)(-1))(rad) = (2.5+/-0.2) x 10(-7) x Phi (V/cm)(2) with the proton fluence, Phi in p(+)/cm(2). The trapping depth dependence, however, did not agree well with the damage profile calculated...

Quality Tests of Double-Sided Silicon Strip Detectors

CERN Document Server

Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

1997-01-01

The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

The ATLAS Tracker Upgrade: Short Strips Detectors for the SLHC

CERN Document Server

Soldevila, U; Lacasta, C; Marti i García, S; Miñano, M

2009-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics ...

Silicon strip detectors for the ATLAS HL-LHC upgrade

CERN Document Server

Gonzalez Sevilla, S; The ATLAS collaboration

2011-01-01

The LHC upgrade is foreseen to increase the ATLAS design luminosity by a factor ten, implying the need to build a new tracker suited to the harsh HL-LHC conditions in terms of particle rates and radiation doses. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. We give an overview of the ATLAS tracker upgrade project, in particular focusing on the crucial innermost silicon strip layers. Results from a wide range of irradiated silicon detectors for the strip region of the future ATLAS tracker are presented. Layout concepts for lightweight yet mechanically very rigid detector modules with high service integration are shown.

Beam test of a large area silicon drift detector

International Nuclear Information System (INIS)

Castoldi, A.; Chinnici, S.; Gatti, E.; Longoni, A.; Palma, F.; Sampietro, M.; Rehak, P.; Ballocchi, G.; Kemmer, J.; Holl, P.; Cox, P.T.; Giacomelli, P.; Vacchi, A.

1992-01-01

The results from the tests of the first large area (4 x 4 cm 2 ) planar silicon drift detector prototype in a pion beam are reported. The measured position resolution in the drift direction is (σ=40 ± 10)μm

MUST: A silicon strip detector array for radioactive beam experiments

CERN Document Server

Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

International Nuclear Information System (INIS)

Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

2013-06-01

In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

Energy Technology Data Exchange (ETDEWEB)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

Front-end counting mode electronics for CdZnTe sensor readout

CERN Document Server

Moraes, Danielle; Kaplon, Jan

2004-01-01

The development of a front-end circuit optimized for CdZnTe detector readout, implemented in 0.25 mu m CMOS technology, is reported. The ASIC comprises 17 channels of a charge sensitive amplifier with an active feedback, followed by a gain-shaper stage and a discriminator with a 5 bit fine-tune DAC. The signal from the discriminator is sensed by a 25 ns mono-stable circuit and an 18-bit static ripple- counter. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at a maximum counting rate of 2 million counts/second. The amplifier shows a linear sensitivity of 24 mV/fC with 50 ns peaking time and an equivalent noise charge of about 650 e/sup -/, for a detector capacitance of 10 pF. When connected to a 3*3*7 mm/sup 3/ CdZnTe detector the amplifier gain is about 8 mV/keV with a noise around 3.6 keV.

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. A key issue ...

Development and test of a high-resolution detector for synchrotron radiation imaging; Entwicklung und Test eines hochaufloesenden Detektors zur Bildgebung mit Synchrotronstrahlung

Energy Technology Data Exchange (ETDEWEB)

Ruebsamen, Oliver

2011-07-01

For medical imaging with x-rays, especially coronary angiography in vivo, high position resolution detectors are needed, thereby being able to deliver a contrast better than 1% and a readout speed faster than milliseconds. Since coronary angiography uses a contrast agent like iodine or gadolinium, high energy photons up to 51 keV are needed for imaging. The k-edge subtraction method allows visualizing small vessels because of the sharp jump of absorption at the k-edge of the contrast agent and the almost constant absorption of the surrounding tissue and bone, as well as the measurement of the concentration of the contrast agent to explore heart dynamics. Various detectors and detector materials are in use or development to match these conditions. Solid state Si-, Ge-, CdZnTe-, CdMnTe- or CdTe-seminconductor detectors are used or tested for imaging, each of them having different physical and/or technical problems which prevent to meet the required specifications. These problems are low absorption efficiency (Si) and reduced position resolution if scintillators are used, cooling and poor resolution (Ge) and charge spread along many pixels and technical problems to manufacture a detector chip (CdZnTe, CdMnTe, CdTe). The approach made in this work is a gas filled ionization chamber, built as a integrating line detector. In general, ionization chambers always suffer from poor absorption efficiency, but this can be overcome using the noble Gases Ar, Kr or Xe at very high gas pressures around 50 bar and relatively long (in the range of cm) anode strips. This design is critical for parallax effects, so an x-ray beam with a very small beam divergence is needed. This requirement in combination with the desired contrast and timing resolution can only be achieved by synchrotron light sources of the third generation, like the DORIS ring at DESY, Hamburg or the ESR in Grenoble. A different problem of ionization chambers is fluorescence photons, which produce a background signal

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

CERN Document Server

Peltola, T.

2014-01-01

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed ...

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

Science.gov (United States)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

MUST, a set of strip detectors for studying radioactive beams induced reactions

International Nuclear Information System (INIS)

Blumenfeld, Y.; Barbier, A.; Beaumel, D.; Charlet, D.; Clavelin, J.F.; Douet, R.; Engrand, M.; Lebon, S.; Lelong, P.; Lesage, A.; Leven, V.; Lhenry, I.; Marechal, F.; Petizon, L.; Pouthas, J.; Richard, A.; Rougier, D.; Soulet, C.; Suomijaervi, T.; Volkov, P.; Voltolini, G.

1996-01-01

This report states the specificity of light particles elastic scattering, and the need of detecting recoil protons to improve angular resolution. Then the development of a specific MUST strip detector is detailed: 60 strips detectors with Si O sub 2 dielectric, that yield 500 ps time resolution, and Si (Li) detectors following next. A versatile data acquisition system has been developed too, with CAMAC interface to suit to any experimental plant. (D.L.)

Strip detectors read-out system user's guide

International Nuclear Information System (INIS)

Claus, G.; Dulinski, W.; Lounis, A.

1996-01-01

The Strip Detector Read-out System consists of two VME modules: SDR-Flash and SDR-seq completed by a fast logic SDR-Trig stand alone card. The system is a self-consistent, cost effective and easy use solution for the read-out of analog multiplexed signals coming from some of the front-end electronics chips (Viking/VA chips family, Premus 128 etc...) currently used together with solid (silicon) or gas microstrip detectors. (author)

A high rate, low noise, x-ray silicon strip detector system

International Nuclear Information System (INIS)

Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

1993-11-01

An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

The ATLAS Tracker Upgrade Short Strips Detectors for the sLHC

CERN Document Server

Soldevila, U; Lacasta, C; Marti i García, S; Miñano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics ...

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

Atlas Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a significant factor, with the upgraded machine dubbed Super-LHC. The ATLAS experiment will require a new tracker for Super-LHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will imply a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

On the Theory of Compensation in Lithium drifted Semiconductor Detectors

Energy Technology Data Exchange (ETDEWEB)

Lauber, A

1969-04-15

The lithium ion drift method produces detectors with a highly but not perfectly compensated intrinsic region. The amount of fixed space charge left in the depleted layer and its dependence on drift and clean-up parameters is of great practical interest. The imperfect compensation is mainly due to the presence in the depletion layer of thermally generated electron-hole pairs swept apart by the voltage applied to the detector during drift. A theoretical model is developed which takes into account the influence on the fixed space charge of mobile carrier generation and recombination. When recombination of free electrons and holes is negligible the theory predicts the formation of linear space charge gradients. When recombination is strong a constant space charge throughout a large part of the compensated layer may result. The theoretical calculations are compared with experimental findings. The influence of space charge on detector performance is discussed.

Hydrogen high pressure proportional drift detector

International Nuclear Information System (INIS)

Arefiev, A.; Balaev, A.

1983-01-01

The design and operation performances of a proportional drift detector PDD are described. High sensitivity of the applied PAD makes it possible to detect the neutron-proton elastic scattering in the energy range of recoil protons as low as 1 keV. The PDD is filled with hydrogen up to the pressure at 40 bars. High purity of the gas is maintained by a continuously operating purification system. The detector has been operating for several years in a neutron beam at the North Area of the CERN SPS

2-D response mapping of multi-linear silicon drift detectors

International Nuclear Information System (INIS)

Castoldi, A.; Guazzoni, C.; Hartmann, R.; Mezza, D.; Strueder, L.; Tassan Garofolo, F.

2010-01-01

Multi-linear silicon drift detectors (MLSDDs) are good candidates to fulfill simultaneous requirements for 2-D position-sensing and spectroscopy applications. The optimization of their design and performance as 2-D imagers requires a detailed study of timing properties of the charge cloud in the MLSDD architecture. In particular it is important to experimentally determine the dependence of the measured amplitude and time-of-arrival on the photon position of interaction so as to derive the 2D detector response. In this paper we will present a detailed experimental characterization aimed at measuring the detector amplitude response and its timing response. The dependence of charge cloud drift time on precise position of interaction has been measured as a function of detector biasing conditions.

Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

Science.gov (United States)

Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

1994-08-01

High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

International Nuclear Information System (INIS)

Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

2012-01-01

1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

International Nuclear Information System (INIS)

Yan Wenqi; Hu Hailong; Zhang Gaolong

2013-01-01

Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M; The ATLAS collaboration

2010-01-01

To extend the physics potential of the Large Hadron Colider (LHC) at CERN, upgrades of the accelerator complex and the detectors towards the Super-LHC (sLHC) are foreseen. The upgrades, separated in Phase-1 and Phase-2, aim at increasing the luminosity while leaving the energy of the colliding particles (7 TeV per proton beam) unchanged. After the Phase-2 upgrade the instantaneous luminosity will be a factor of 5-10 higher than the design luminosity of the LHC. Due to the increased track rate and extreme radiation levels for the tracking detectors, upgrades of the detectors are necessary. At ATLAS, one of the two general purpose detectors at the LHC, the current inner detector will be replaced by an all-silicon tracker. This article describes the plans for the Phase-2 upgrade of the silicon strip detector of ATLAS. Radiation hard n-in-p silicon detectors with shorter strips than currently installed in ATLAS are planned. Results of measurements with these sensors and plans for module designs will be discussed.

Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

International Nuclear Information System (INIS)

Zeng, Huiming; Wei, Tingcun; Wang, Jia

2017-01-01

A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only a metal–oxide–semiconductor (MOS) transistor, thus the shaping time of the slow shaper can be kept constant for different amounts of input energies. As a result, the linearity of conversion gain is improved significantly. The ASIC was designed and fabricated in a 0.35 µm CMOS process with a die size of 2.60 mm×3.53 mm. The tested results show that a typical channel provides an equivalent noise charge (ENC) of 109.7e − +16.3e − /pF with a power consumption of 4 mW and achieves a conversion gain of 87 mV/fC with a nonlinearity of <0.4%. The linearity of conversion gain is improved by at least 86.6% as compared with the traditional approaches using the same front-end readout architecture and manufacture process. Moreover, the inconsistency among channels is <0.3%. An energy resolution of 2.975 keV (FWHM) for gamma rays of 59.5 keV was measured by connecting the ASIC to a 5 mm×5 mm ×2 mm CdZnTe detector at room temperature. The front-end readout ASIC presented in this paper achieves an outstanding linearity performance without compromising the noise, power consumption, and chip size performances.

Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

Energy Technology Data Exchange (ETDEWEB)

Zeng, Huiming; Wei, Tingcun, E-mail: weitc@nwpu.edu.cn; Wang, Jia

2017-03-01

A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only a metal–oxide–semiconductor (MOS) transistor, thus the shaping time of the slow shaper can be kept constant for different amounts of input energies. As a result, the linearity of conversion gain is improved significantly. The ASIC was designed and fabricated in a 0.35 µm CMOS process with a die size of 2.60 mm×3.53 mm. The tested results show that a typical channel provides an equivalent noise charge (ENC) of 109.7e{sup −}+16.3e{sup −}/pF with a power consumption of 4 mW and achieves a conversion gain of 87 mV/fC with a nonlinearity of <0.4%. The linearity of conversion gain is improved by at least 86.6% as compared with the traditional approaches using the same front-end readout architecture and manufacture process. Moreover, the inconsistency among channels is <0.3%. An energy resolution of 2.975 keV (FWHM) for gamma rays of 59.5 keV was measured by connecting the ASIC to a 5 mm×5 mm ×2 mm CdZnTe detector at room temperature. The front-end readout ASIC presented in this paper achieves an outstanding linearity performance without compromising the noise, power consumption, and chip size performances.

The New Silicon Strip Detectors for the CMS Tracker Upgrade

CERN Document Server

Dragicevic, Marko

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

Cumulative effects of Te precipitates in CdZnTe radiation detectors

International Nuclear Information System (INIS)

Bolotnikov, A.E.; Camarda, G.S.; Carini, G.A.; Cui, Y.; Li, L.; James, R.B.

2007-01-01

High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

A TPC-like readout method for high precision muon-tracking using GEM-detectors

Energy Technology Data Exchange (ETDEWEB)

Flierl, Bernhard; Biebel, Otmar; Bortfeldt, Jonathan; Hertenberger, Ralf; Klitzner, Felix; Loesel, Philipp; Mueller, Ralph [Ludwig-Maximilians-Universitaet Muenchen (Germany); Zibell, Andre [Julius-Maximilians-Universitaet Wuerzburg (Germany)

2016-07-01

Gaseous electron multiplier (GEM) detectors are well suited for tracking of charged particles. Three dimensional tracking in a single layer can be achieved by application of a time-projection-chamber like readout mode (μTPC), if the drift time of the electrons is measured and the position dependence of the arrival time is used to calculate the inclination angle of the track. To optimize the tracking capabilities for ion tracks drift gas mixtures with low drift velocity have been investigated by measuring tracks of cosmic muons in a compact setup of four GEM-detectors of 100 x 100 x 6 mm{sup 3} active volume each and an angular acceptance of -25 to 25 . The setup consists of three detectors with two-dimensional strip readout layers of 0.4 mm pitch and one detector with a single strip readout layer of 0.25 mm pitch. All strips are readout by APV25 frontend boards and the amplification stage in the detectors consists of three GEM-foils. Tracks are reconstructed by the μTPC-method in one of the detectors and are then compared to the prediction from the other three detectors defined by the center of charge in every detector. We report our study of Argon and Helium based noble gas mixtures with carbon-dioxide as quencher.

High-Rate Performance of Muon Drift Tube Detectors

CERN Document Server

Schwegler, Philipp

The Large Hadron Collider (LHC) at the European Centre for Particle Physics, CERN, collides protons with an unprecedentedly high centre-of-mass energy and luminosity. The collision products are recorded and analysed by four big experiments, one of which is the ATLAS detector. In parallel with the first LHC run from 2009 to 2012, which culminated in the discovery of the last missing particle of the Standard Model of particle physics, the Higgs boson, planning of upgrades of the LHC for higher instantaneous luminosities (HL-LHC) is already progressing. The high instantaneous luminosity of the LHC puts high demands on the detectors with respect to radiation hardness and rate capability which are further increased with the luminosity upgrade. In this thesis, the limitations of the Muon Drift Tube (MDT) chambers of the ATLAS Muon Spectrometer at the high background counting rates at the LHC and performance of new small diameter muon drift tube (sMDT) detectors at the even higher background rates at HL-LHC are stud...

Resistive-strips micromegas detectors with two-dimensional readout

Science.gov (United States)

Byszewski, M.; Wotschack, J.

2012-02-01

Micromegas detectors show very good performance for charged particle tracking in high rate environments as for example at the LHC. It is shown that two coordinates can be extracted from a single gas gap in these detectors. Several micromegas chambers with spark protection by resistive strips and two-dimensional readout have been tested in the context of the R&D work for the ATLAS Muon System upgrade.

True coincidence-summing corrections for the coincident γ-rays measured with coplanar grid CdZnTe detectors

International Nuclear Information System (INIS)

Yuecel, H.; Solmaz, A.N.; Koese, E.; Bor, D.

2010-01-01

In this study, true coincidence-summing (TCS) correction factors have been measured for the sources 22 Na, 60 Co, 133 Ba and 152 Eu by use of three large volume coplanar grid CdZnTe (acronym: CZT) detectors. In case of a close-in detection geometry, two different TCS calculation algorithms were used to compute the required TCS correction factors. Both of the algorithms are based on the measured total-to-peak (TTP) ratio and full-energy peak (FEP) efficiency values that were obtained using almost 'single' energy and coincidence-free nuclides. The results for TCS correction factors obtained by two different algorithms were agreeable to each other. The obtained TCS factors were ranged from about 7% to 30.5% in a 2250 mm 3 CZT detector when a close counting geometry was used. For other two detectors with a volume of 1000 and 1687.5 mm 3 , the resulted TCS correction factors were relatively smaller and varied between about 0.1% and 20% at the close counting geometry condition. Therefore, the results indicate that there is a need for the estimation of TCS corrections in CZT detectors, especially when their crystal volumes are greater than 1 cm 3 and these detectors are used in the case of a close-in detection geometry.

Numerical analysis of edge effects in side illuminated strip detectors for digital radiology

CERN Document Server

Krizaj, D

2000-01-01

The influence of edge defects on side illuminated X-ray strip detectors for digital radiology is investigated by numerical device modeling. By assuming positive fixed oxide charges on side and top surfaces simulations have shown strong curvature of the equipotential lines in the edge region. A fraction of the edge generated current surpasses the edge guard-ring junction and is collected by the readout strips. As a consequence, strips cannot be placed close to the edge of the structure and collection efficiency is reduced. An n-on-n instead of a p-on-n strip detector is proposed enabling collection of edge generated carriers by a very narrow guard-ring junction and placement of the readout strip close to the edge without increase of the strip leakage current.

Silicon strip detector qualification for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Kaussen, Gordon

2008-10-06

To provide the best spatial resolution for the particle trajectory reconstruction and a very fast readout, the inner tracking system of CMS is build up of silicon detectors with a pixel tracker in the center surrounded by a strip tracker. The silicon strip tracker consists of so-called modules representing the smallest detection unit of the tracking device. These modules are mounted on higher-level structures called shells in the tracker inner barrel (TIB), rods in the tracker outer barrel (TOB), disks in the tracker inner disks (TID) and petals in the tracker end caps (TEC). The performance of the participating two shells of the TIB, four rods of the TOB and two petals of the TEC (representing about 1% of the final strip tracker) could be studied in different magnetic fields over a period of approximately two month using cosmic muon signals. The last test before inserting the tracker in the CMS experiment was the Tracker Slice Test performed in spring/summer 2007 at the Tracker Integration Facility (TIF) at CERN after installing all subdetectors in the tracker support tube. Approximately 25% of the strip tracker +z side was powered and read out using a cosmic ray trigger built up of scintillation counters. In total, about 5 million muon events were recorded under various operating conditions. These events together with results from commissioning runs were used to study the detector response like cluster charges, signal-to-noise ratios and single strip noise behaviour as well as to identify faulty channels which turned out to be in the order of a few per mille. The performance of the silicon strip tracker during these different construction stages is discussed in this thesis with a special emphasis on the tracker end caps. (orig.)

Silicon strip detector qualification for the CMS experiment

International Nuclear Information System (INIS)

Kaussen, Gordon

2008-01-01

To provide the best spatial resolution for the particle trajectory reconstruction and a very fast readout, the inner tracking system of CMS is build up of silicon detectors with a pixel tracker in the center surrounded by a strip tracker. The silicon strip tracker consists of so-called modules representing the smallest detection unit of the tracking device. These modules are mounted on higher-level structures called shells in the tracker inner barrel (TIB), rods in the tracker outer barrel (TOB), disks in the tracker inner disks (TID) and petals in the tracker end caps (TEC). The performance of the participating two shells of the TIB, four rods of the TOB and two petals of the TEC (representing about 1% of the final strip tracker) could be studied in different magnetic fields over a period of approximately two month using cosmic muon signals. The last test before inserting the tracker in the CMS experiment was the Tracker Slice Test performed in spring/summer 2007 at the Tracker Integration Facility (TIF) at CERN after installing all subdetectors in the tracker support tube. Approximately 25% of the strip tracker +z side was powered and read out using a cosmic ray trigger built up of scintillation counters. In total, about 5 million muon events were recorded under various operating conditions. These events together with results from commissioning runs were used to study the detector response like cluster charges, signal-to-noise ratios and single strip noise behaviour as well as to identify faulty channels which turned out to be in the order of a few per mille. The performance of the silicon strip tracker during these different construction stages is discussed in this thesis with a special emphasis on the tracker end caps. (orig.)

Parallel superconducting strip-line detectors: reset behaviour in the single-strip switch regime

International Nuclear Information System (INIS)

Casaburi, A; Heath, R M; Tanner, M G; Hadfield, R H; Cristiano, R; Ejrnaes, M; Nappi, C

2014-01-01

Superconducting strip-line detectors (SSLDs) are an important emerging technology for the detection of single molecules in time-of-flight mass spectrometry (TOF-MS). We present an experimental investigation of a SSLD laid out in a parallel configuration, designed to address selected single strip-lines operating in the single-strip switch regime. Fast laser pulses were tightly focused onto the device, allowing controllable nucleation of a resistive region at a specific location and study of the subsequent device response dynamics. We observed that in this regime, although the strip-line returns to the superconducting state after triggering, no effective recovery of the bias current occurs, in qualitative agreement with a phenomenological circuit simulation that we performed. Moreover, from theoretical considerations and by looking at the experimental pulse amplitude distribution histogram, we have the first confirmation of the fact that the phenomenological London model governs the current redistribution in these large area devices also after detection events. (paper)

Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

Science.gov (United States)

Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

2017-07-01

Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

First results from a silicon-strip detector with VLSI readout

International Nuclear Information System (INIS)

Anzivino, G.; Horisberger, R.; Hubbeling, L.; Hyams, B.; Parker, S.; Breakstone, A.; Litke, A.M.; Walker, J.T.; Bingefors, N.

1986-01-01

A 256-strip silicon detector with 25 μm strip pitch, connected to two 128-channel NMOS VLSI chips (Microplex), has been tested using straight-through tracks from a ruthenium beta source. The readout channels have a pitch of 47.5 μm. A single multiplexed output provides voltages proportional to the integrated charge from each strip. The most probable signal height from the beta traversals is approximately 14 times the rms noise in any single channel. (orig.)

A drift chamber system for a toroidal detector

International Nuclear Information System (INIS)

Barbosa, F.J.; Christo, S.; Cuevas, C.; Doolittle, G.; Doughty, D.C.; Hutton, C.; Joyce, D.; Mecking, B.A.; Mestayer, M.D.; Niczyporuk, B.; O'Meara, J.E.; Tilles, D.; Tuzel, W.; Yegneswaran, A.

1992-01-01

We present design details for drift chambers to be used in the CLAS detector at CEBAF. Novel features include nonparallel endplates fabricated from composite materials, a gas mixture which includes helium to reduce multiple scattering, low wire tension, and a hexagonal cell layout. Magnetic field strength in the active region ranges from 0 to 2 T, and wire length varies from 10 to 300 cm. We discuss specific construction details for the outer drift chambers. (orig.)

A drift chamber system for a toroidal detector

Energy Technology Data Exchange (ETDEWEB)

Barbosa, F.J.; Christo, S.; Cuevas, C.; Doolittle, G.; Doughty, D.C.; Hutton, C.; Joyce, D.; Mecking, B.A.; Mestayer, M.D.; Niczyporuk, B.; O' Meara, J.E.; Tilles, D.; Tuzel, W.; Yegneswaran, A. (CEBAF, Newport News, VA (United States))

1992-12-01

We present design details for drift chambers to be used in the CLAS detector at CEBAF. Novel features include nonparallel endplates fabricated from composite materials, a gas mixture which includes helium to reduce multiple scattering, low wire tension, and a hexagonal cell layout. Magnetic field strength in the active region ranges from 0 to 2 T, and wire length varies from 10 to 300 cm. We discuss specific construction details for the outer drift chambers. (orig.).

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the sLHC

International Nuclear Information System (INIS)

Lefebvre, Michel; Minano Moya, Mercedes

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. (authors)

Study of inter-strip gap effects and efficiency for full energy detection of double sided silicon strip detectors

International Nuclear Information System (INIS)

Fisichella, M.; Forneris, J.; Grassi, L.

2015-01-01

We performed a characterization of Double Sided Silicon Strip Detectors (DSSSD) with the aim to carry out a systematic study of the inter-strip effects on the energy measurement of charged particles. The dependence of the DSSSD response on ion, energy and applied bias has been investigated. (author)

MUON DETECTOR: BARREL DRIFT TUBES (DT) AND ALIGNMENT

CERN Multimedia

Marco Dallavalle

After months of cosmics data taking the drift tube (DT) detector is in good shape, ready for LHC beams. Several hundreds of millions of cosmics events have been recorded; out of those, more than 90% were triggered by the DT system. Data integrity analyses have shown a very reliable read-out system, also during high rate tests. With a 98% of the detector operational, only awaiting the arrival of some low voltage modules and for the completion of the DT Track Finder system, data taking is starting to become routine job. These continuous running exercises have been very useful to study performance and reliability of the detector in a medium term period, allowing understanding and fixing failures that have occurred with low frequency. Drift tubes have become a very stable system, becoming a service of muon triggering for the tracker after its final installation. During the last months, major efforts have taken place in synchronization tasks, within the DT system (250 chambers) and also with the rest of the CMS su...

Drift chamber vertex detectors for SLC/LEP

Energy Technology Data Exchange (ETDEWEB)

Hayes, K G

1988-03-01

Factors influencing the design of drift chamber vertex detectors for SLC and LEP are discussed including global strategy, chamber gas, cell design, and signal processing. The designs of the vertex chambers for the L3 and OPAL experiments at LEP and the Mark II experiment at the SLC are described.

Measurement of 235U Enrichment Using the Semi-Peak-Ratio Technique with CdZnTe Gamma-Ray Detector

International Nuclear Information System (INIS)

Ha, J. H.; Ko, W. I.; Lee, S. Y.; Song, D. Y.; Kim, H. D.; Yang, M. S.

2001-01-01

In uranium enrichment plants and nuclear fuel fabrication facilities, exact measurement of fissile isotope enrichment of Uranium is required for material accounting in international safeguards inspection as well as process quality control. The purpose of this study was to develop a simple measurement system which can portably be used at nuclear fuel fabrication plants especially dealing with low enriched uranium. For this purpose, a small size CZT (CdZnTe) detector was used, and the detector performance in low uranium gamma/X-rays energy range was investigated by use of various enriched uranium oxide samples. New enrichment measurement technique and analysis method for low enriched uranium oxide, so-called, 'semi-peak ratio technique' was developed. The newly developed method was considered as an alternative technique for the low enrichment and would be useful to account nuclear material in safeguarding activity at nuclear fuel fabrication facility

New developments in clinical applications of CdTe and CdZnTe detectors

International Nuclear Information System (INIS)

Scheiber, C.

1996-01-01

This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

Accelerated life test of an ONO stacked insulator film for a silicon micro-strip detector

International Nuclear Information System (INIS)

Okuno, Shoji; Ikeda, Hirokazu; Saitoh, Yutaka

1996-01-01

We have used to acquire the signal through an integrated capacitor for a silicon micro-strip detector. When we have been using a double-sided silicon micro-strip detector, we have required a long-term stability and a high feasibility for the integrated capacitor. An oxide-nitride-oxide (ONO) insulator film was theoretically expected to have a superior nature in terms of long term reliability. In order to test long term reliability for integrated capacitor of a silicon micro-strip detector, we made a multi-channel measuring system for capacitors

Drift chamber vertex detectors for SLC/LEP

International Nuclear Information System (INIS)

Hayes, K.G.

1987-03-01

The short but measurable lifetimes of the b and c quarks and the tau lepton have motivated the development of high precision tracking detectors capable of providing information on the decay vertex topology of events containing these particles. This paper reviews the OPAL, L3, and MARK II experiments vertex drift chambers

Results on a 10 micron pitch detector with individual strip readout

International Nuclear Information System (INIS)

Antinori, F.; Dameri, M.; Olcese, A.; Osculati, B.; Rossi, L.; Forino, A.; Marioli, D.; Meroni, C.; Redaelli, N.; Torretta, D.

1990-01-01

A 10 μm pitch silicon microstrip detector with individual strip readout via hybrid electronics has been produced and operated. Connections to digital and analog electronics is realized through an insensitive fan-out structure on the detector itself. The detector has been used in the WA82 experiment at the CERN Ω' spectrometer. (orig.)

Development and performance of double sided silicon strip detectors

International Nuclear Information System (INIS)

Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

1991-01-01

Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

A double sided silicon strip detector as a DRAGON end detector

CERN Document Server

Wrede, C; Rogers, J G; D'Auria, J M

2003-01-01

The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

An Experimental Study of the Accuracy of Compensation in Lithium Drifted Germanium Detectors

Energy Technology Data Exchange (ETDEWEB)

Lauber, A; Malmsten, B

1969-10-15

The nature and magnitude of the space charge existing in the compensated layer of lithium drifted germanium detectors has been studied as a function of drifted depth and of the electric field applied during drift. Experimental values were obtained from the dependence of detector capacitance on applied bias. In most cases there was a linear space charge gradient in the compensated layer. When small electric fields were applied to deep compensated layers, the space charge became constant throughout a large part of the compensated layer. There is some evidence for a strong decrease of mobile carrier recombination lifetime with increasing drifted depth, possibly down to a few microseconds for drifted depths of the order of 7 mm. The experimental results of the investigation are to a large extent in good agreement with theory.

A silicon strip detector dose magnifying glass for IMRT dosimetry

International Nuclear Information System (INIS)

Wong, J. H. D.; Carolan, M.; Lerch, M. L. F.; Petasecca, M.; Khanna, S.; Perevertaylo, V. L.; Metcalfe, P.; Rosenfeld, A. B.

2010-01-01

Purpose: Intensity modulated radiation therapy (IMRT) allows the delivery of escalated radiation dose to tumor while sparing adjacent critical organs. In doing so, IMRT plans tend to incorporate steep dose gradients at interfaces between the target and the organs at risk. Current quality assurance (QA) verification tools such as 2D diode arrays, are limited by their spatial resolution and conventional films are nonreal time. In this article, the authors describe a novel silicon strip detector (CMRP DMG) of high spatial resolution (200 μm) suitable for measuring the high dose gradients in an IMRT delivery. Methods: A full characterization of the detector was performed, including dose per pulse effect, percent depth dose comparison with Farmer ion chamber measurements, stem effect, dose linearity, uniformity, energy response, angular response, and penumbra measurements. They also present the application of the CMRP DMG in the dosimetric verification of a clinical IMRT plan. Results: The detector response changed by 23% for a 390-fold change in the dose per pulse. A correction function is derived to correct for this effect. The strip detector depth dose curve agrees with the Farmer ion chamber within 0.8%. The stem effect was negligible (0.2%). The dose linearity was excellent for the dose range of 3-300 cGy. A uniformity correction method is described to correct for variations in the individual detector pixel responses. The detector showed an over-response relative to tissue dose at lower photon energies with the maximum dose response at 75 kVp nominal photon energy. Penumbra studies using a Varian Clinac 21EX at 1.5 and 10.0 cm depths were measured to be 2.77 and 3.94 mm for the secondary collimators, 3.52 and 5.60 mm for the multileaf collimator rounded leaf ends, respectively. Point doses measured with the strip detector were compared to doses measured with EBT film and doses predicted by the Philips Pinnacle treatment planning system. The differences were 1.1%�

The ATLAS Inner Detector operation,data quality and tracking performance.

CERN Document Server

Stanecka, E; The ATLAS collaboration

2012-01-01

The ATLAS Inner Detector comprises silicon and gas based detectors. The Semi-Conductor Tracker (SCT) and the Pixel Detector are the key precision tracking silicon devices in the Inner Detector of the ATLAS experiment at CERN LHC. And the the Transition Radiation Tracker (TRT), the outermost of the three subsystems of the ATLAS Inner Detector is made of thin-walled proportional-mode drift tubes (straws). The Pixel Detector consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. The SCT is a silicon strip detector and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. The TRT is made...

Beam test of CSES silicon strip detector module

Science.gov (United States)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

Probe station for testing of ALICE silicon drift detectors

CERN Document Server

Humanic, T J; Piemonte, C; Rashevsky, A; Sugarbaker, E R; Vacchi, A

2003-01-01

Large area, 7.25 cm multiplied by 8.76 cm silicon drift detectors have been developed and are in production for the ALICE experiment at LHC. An active area of the detector of more than 50 cm**2 imposes high demands on the quality of processing and raw material. Automated testing procedures have been developed to test detectors before mounting them on the ladders. Probe stations for ALICE SDD testing were designed and built at INFN, Trieste and Ohio State University (OSU). Testing procedures, detector selection criteria and some details of the OSU probe station design are discussed.

Silicon Strip Detectors for the ATLAS sLHC Upgrade

CERN Document Server

Miñano, M; The ATLAS collaboration

2011-01-01

While the Large Hadron Collider (LHC) at CERN is continuing to deliver an ever-increasing luminosity to the experiments, plans for an upgraded machine called Super-LHC (sLHC) are progressing. The upgrade is foreseen to increase the LHC design luminosity by a factor ten. The ATLAS experiment will need to build a new tracker for sLHC operation, which needs to be suited to the harsh sLHC conditions in terms of particle rates. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. The left part of figure 1 shows the simulated layout for the ATLAS tracker upgrade to be installed in the volume taken up by the current ATLAS pixel, strip and transition radiation detectors. Silicon sensors with sufficient radiation hardness are the subject of an international R&D programme, working on pixel and strip sensors. The...

MUST: A silicon strip detector array for radioactive beam experiments

International Nuclear Information System (INIS)

Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

An algorithm for calculating the Lorentz angle in silicon detectors [online

OpenAIRE

Bartsch, Valeria; De Boer, Willem; Bol, Johannes; Dierlamm, Alexander; Grigoriev, Eugene; Hauler, Florian; Heising, Stephan; Jungermann, Levin

2001-01-01

The CMS (Compact Muon Solenoid) detector will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is aected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. The CMS silicon strip detector is read out on the p-side of the sensors, where holes are coll...

The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

DEFF Research Database (Denmark)

Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.

2003-01-01

Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have ...

Experience with the silicon strip detector of ALICE

NARCIS (Netherlands)

Nooren, G.J.L.

2009-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

Silicon μ-strip detectors with SVX chip readout

International Nuclear Information System (INIS)

Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.; Timm, S.; Vorwalter, K.; Werding, R.

1994-01-01

A new silicon strip detector has been designed and constructed for a fixed target experiment at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into Fastbus memory. Construction and performance during the actual data taking run are discussed. ((orig.))

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1996-10-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1997-01-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Laboratory and test beam results from a large-area silicon drift detector

CERN Document Server

Bonvicini, V; Giubellino, P; Gregorio, A; Idzik, M; Kolojvari, A A; Montaño-Zetina, L M; Nouais, D; Petta, C; Rashevsky, A; Randazzo, N; Reito, S; Tosello, F; Vacchi, A; Vinogradov, L I; Zampa, N

2000-01-01

A very large-area (6.75*8 cm/sup 2/) silicon drift detector with integrated high-voltage divider has been designed, produced and fully characterised in the laboratory by means of ad hoc designed MOS injection electrodes. The detector is of the "butterfly" type, the sensitive area being subdivided into two regions with a maximum drift length of 3.3 cm. The device was also tested in a pion beam (at the CERN PS) tagged by means of a microstrip detector telescope. Bipolar VLSI front-end cells featuring a noise of 250 e/sup -/ RMS at 0 pF with a slope of 40 e/sup -//pF have been used to read out the signals. The detector showed an excellent stability and featured the expected characteristics. Some preliminary results will be presented. (12 refs).

The properties of the cylindrical drift chambers of the CELLO detector

International Nuclear Information System (INIS)

Binder, U.

1983-12-01

In the present thesis the study of the properties of the cylindrical drift chamber of the CELLO interior detector by muons from the cosmic radiation is described. An iterative procedure for the parametrization of the timepath relation is presented. The numerical approximation obtained by means of this procedure deviated in all ranges of drift time by less than 50 μm from the experimentally determined, nonlinear time-path relation. The chamber properties were determined with and without magnetic fields: With an argon-ethane 50%/50% gas mixture a long plateau of the detection probabilities was reached. Without magnetic field by the drift chambers a mean spatial resolution of 170 μm was obtained. From the dependence of the spatial resolution from the drift path results that the drift chambers respond if the electrons from the first 2 to 3 primary ionizations reach the signal wire. The mean response probability of the drift chambers contributes to 97.5% and the overresponse probability to 3.6%. The mean spatial resolution in the magnetic field was determined by means of the chi 2 -distribution, it contributes to 170 μm. For the response probability the value of 98.3% was determined. The errors in the track parameters were determined by comparison of the cosmic ray tracks in the upper and lower half of the detector. (orig./HSI) [de

Trigger drift chamber for the upgraded mark II detector at PEP

Science.gov (United States)

Ford, W. T.; Smith, J. G.; Wagner, S. R.; Weber, P.; White, S. L.; Alvarez, M.; Calviño, F.; Fernandez, E.

1987-04-01

A small cylindrical track detector was built as an array of single-wire drift cells with aluminized mylar cathode tubes. Point measurement resolution of ˜ 90 μm was achieved with a drift gas of 50% argon-50% ethane at atmospheric pressure. The chamber construction, electronics, and calibration are discussed. Performance results from PEP colliding-beam data are presented.

Characterization of a dose verification system dedicated to radiotherapy treatments based on a silicon detector multi-strips

International Nuclear Information System (INIS)

Bocca, A.; Cortes Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Aranas, R.; Abou Haidar, Z.; Alvarez, M. A. G.; Quesada, J. M.; Vega-Leal, A. P.; Perez Neto, F. J.

2011-01-01

In this paper, we present the characterization of a silicon detector multi-strips (SSSSD: Single Sided Silicon Strip Detector), developed by the company Micron Semiconductors Ltd. for use as a verification system for radiotherapy treatments.

New developments on silicon drift detectors

International Nuclear Information System (INIS)

Rashevsky, A.

1996-01-01

In the frame of the project to develop large-area linear drift detectors few prototypes have been designed and produced. the function of these prototypes is to allow the evaluation of the solutions chosen for the geometry of the on-board electrodes and the production process. On these prototypes it is studied the static characteristics and measured time of-flight and charge collection injecting charges with an IR laser source. It is report the results from one of the prototypes

Development of Fast High-Resolution Muon Drift-Tube Detectors for High Counting Rates

CERN Document Server

INSPIRE-00287945; Dubbert, J.; Horvat, S.; Kortner, O.; Kroha, H.; Legger, F.; Richter, R.; Adomeit, S.; Biebel, O.; Engl, A.; Hertenberger, R.; Rauscher, F.; Zibell, A.

2011-01-01

Pressurized drift-tube chambers are e?cient detectors for high-precision tracking over large areas. The Monitored Drift-Tube (MDT) chambers of the muon spectrometer of the ATLAS detector at the Large Hadron Collider (LHC) reach a spatial resolution of 35 micons and almost 100% tracking e?ciency with 6 layers of 30 mm diameter drift tubes operated with Ar:CO2 (93:7) gas mixture at 3 bar and a gas gain of 20000. The ATLAS MDT chambers are designed to cope with background counting rates due to neutrons and gamma-rays of up to about 300 kHz per tube which will be exceeded for LHC luminosities larger than the design value of 10-34 per square cm and second. Decreasing the drift-tube diameter to 15 mm while keeping the other parameters, including the gas gain, unchanged reduces the maximum drift time from about 700 ns to 200 ns and the drift-tube occupancy by a factor of 7. New drift-tube chambers for the endcap regions of the ATLAS muon spectrometer have been designed. A prototype chamber consisting of 12 times 8 l...

Signal collection and position reconstruction of silicon strip detectors with 200 μm readout pitch

International Nuclear Information System (INIS)

Krammer, M.; Pernegger, H.

1997-01-01

Silicon strip detectors with large readout pitch and intermediate strips offer an interesting approach to reduce the number of readout channels in the tracking systems of future collider experiments without compromising too much on the spatial resolution. Various detector geometries with a readout pitch of 200 μm have been studied for their signal response and spatial resolution. (orig.)

The silicon strips Inner Tracker (ITk) of the ATLAS Phase-II upgrade detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00220523; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. At the same time, they cannot introduce excess material which could undermine performance. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The inner detector of the current detector will be replaced by the Inner Tracker (ITk). It consists of an innermost pixel detector and an outer strips tracker. This contribution focuses on the strips tracker. The basic detection unit of the ...

Radiation Damage Effects and Performance of Silicon Strip Detectors using LHC Readout Electronics

CERN Document Server

AUTHOR|(CDS)2067734

1998-01-01

Future high energy physics experiments as the ATLAS experiment at CERN, will use silicon strip detectors for fast and high precision tracking information. The high hadron fluences in these experiments cause permanent damage in the silicon.Additional energy levels are introduced in the bandgap thus changing the electrical properties such as leakage current and full depletion voltage V_fd .Very high leakage currents are observed after irradiation and lead to higher electronic noise and thus decrease the spatial resolution.V_fd increases to a few hundred volts after irradiation and eventually beyond the point of stable operating voltages. Prototype detectors with either p-implanted strips (p-in-n) and n-implanted strip detectors (n-in-n) were irradiated to the maximum expected fluence in ATLAS.The irradiation and the following study of the current and V_fd were carried out under ATLAS operational conditions.The evolution of V_fd after irradiation is compared to models based on diode irradiations.The qualitative ...

Monitored Drift Chambers in the ATLAS Detector

CERN Multimedia

Herten, G

Monitored Drift Chambers (MDT) are used in the ATLAS Detector to measure the momentum of high energy muons. They consist of drift tubes, which are filled with an Ar-CO2 gas mixture at 3 bar gas pressure. About 1200 drift chambers are required for ATLAS. They are up to 6 m long. Nevertheless the position of every wire needs to be known with a precision of 20 µm within a chamber. In addition, optical alignment sensors are required to measure the relative position of adjacent chambers with a precision of 30µm. This gigantic task seems impossible at first instance. Indeed it took many years of R&D to invent the right tools and methods before the first chamber could be built according to specifications. Today, at the time when 50% of the chambers have been produced, we are confident that the goal for ATLAS can be reached. The mechanical precision of the chambers could be verified with the x-ray tomograph at CERN. This ingenious device, developed for the MDT system, is able to measure the wire position insid...

Studies of dynamics of electron clouds in STAR silicon drift detectors

CERN Document Server

Bellwied, R; Brandon, N; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Hall, J R; Hardtke, D; Hoffmann, G W; Humanic, T J; Kotova, A I; Kotov, I V; Kraner, H W; Li, Z; Lynn, D; Middelkamp, P; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Sugarbaker, E R; Takahashi, J; Wilson, W K

2000-01-01

The dynamics of electrons generated in silicon drift detectors was studied using an IR LED. Electrons were generated at different drift distances. In this way, the evolution of the cloud as a function of drift time was measured. Two methods were used to measure the cloud size. The method of cumulative functions was used to extract the electron cloud profiles. Another method obtains the cloud width from measurements of the charge collected on a single anode as a function of coordinate of the light spot. The evolution of the electron cloud width with drift time is compared with theoretical calculations. Experimental results agreed with theoretical expectations.

Trigger drift chamber for the upgraded Mark II detector at PEP

International Nuclear Information System (INIS)

Ford, W.T.; Smith, J.G.; Wagner, S.R.; Weber, P.; White, S.L.; Alvarez, M.; Calvino, F.; Fernandez, E.; Universidad Autonoma de Barcelona

1987-01-01

A small cylindrical track detector was built as an array of single-wire drift cells with aluminized mylar cathode tubes. Point measurement resolution of ∝90 μm was achieved with a drift gas of 50% argon-50% ethane at atmospheric pressure. The chamber construction, electronics, and calibration are discussed. Performance results from PEP colliding-beam data are presented. (orig.)

Material-specific imaging system using energy-dispersive X-ray diffraction and spatially resolved CdZnTe detectors with potential application in breast imaging

Energy Technology Data Exchange (ETDEWEB)

Barbes, Damien, E-mail: damien.barbes@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tabary, Joachim, E-mail: joachim.tabary@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Paulus, Caroline, E-mail: caroline.paulus@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Hazemann, Jean-Louis, E-mail: jean-louis.hazemann@neel.cnrs.fr [Univ.Grenoble Alpes, Inst NEEL, F-38042 Grenoble (France); CNRS, Inst NEEL, F-38042 Grenoble (France); Verger, Loïck, E-mail: loick.verger@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France)

2017-03-11

This paper presents a coherent X-ray-scattering imaging technique using a multipixel energy-dispersive system. Without any translation, the technique produces specific 1D image from data recorded by a single CdZnTe detector pixel using subpixelation techniques. The method is described in detail, illustrated by a simulation and then experimentally validated. As the main considered application of our study is breast imaging, this validation involves 2D imaging of a phantom made of plastics mimicking breast tissues. The results obtained show that our system can specifically image the phantom using a single detector pixel. For the moment, in vivo breast imaging applications remain difficult, as the dose delivered by the system is too high, but some adjustments are considered for further work.

Performance of a large-area GEM detector read out with wide radial zigzag strips

Energy Technology Data Exchange (ETDEWEB)

Zhang, Aiwu, E-mail: azhang@fit.edu; Bhopatkar, Vallary; Hansen, Eric; Hohlmann, Marcus; Khanal, Shreeya; Phipps, Michael; Starling, Elizabeth; Twigger, Jessie; Walton, Kimberly

2016-03-01

A 1-meter-long trapezoidal Triple-GEM detector with wide readout strips was tested in hadron beams at the Fermilab Test Beam Facility in October 2013. The readout strips have a special zigzag geometry and run radially with an azimuthal pitch of 1.37 mrad to measure the azimuthal ϕ-coordinate of incident particles. The zigzag geometry of the readout reduces the required number of electronic channels by a factor of three compared to conventional straight readout strips while preserving good angular resolution. The average crosstalk between zigzag strips is measured to be an acceptable 5.5%. The detection efficiency of the detector is (98.4±0.2)%. When the non-linearity of the zigzag-strip response is corrected with track information, the angular resolution is measured to be (193±3) μrad, which corresponds to 14% of the angular strip pitch. Multiple Coulomb scattering effects are fully taken into account in the data analysis with the help of a stand-alone Geant4 simulation that estimates interpolated track errors.

A feasibility study of a PET/MRI insert detector using strip-line and waveform sampling data acquisition.

Science.gov (United States)

Kim, H; Chen, C-T; Eclov, N; Ronzhin, A; Murat, P; Ramberg, E; Los, S; Wyrwicz, Alice M; Li, Limin; Kao, C-M

2015-06-01

We are developing a time-of-flight Positron Emission Tomography (PET) detector by using silicon photo-multipliers (SiPM) on a strip-line and high speed waveform sampling data acquisition. In this design, multiple SiPMs are connected on a single strip-line and signal waveforms on the strip-line are sampled at two ends of the strip to reduce readout channels while fully exploiting the fast time response of SiPMs. In addition to the deposited energy and time information, the position of the hit SiPM along the strip-line is determined by the arrival time difference of the waveform. Due to the insensitivity of the SiPMs to magnetic fields and the compact front-end electronics, the detector approach is highly attractive for developing a PET insert system for a magnetic resonance imaging (MRI) scanner to provide simultaneous PET/MR imaging. To investigate the feasibility, experimental tests using prototype detector modules have been conducted inside a 9.4 Tesla small animal MRI scanner (Bruker BioSpec 94/30 imaging spectrometer). On the prototype strip-line board, 16 SiPMs (5.2 mm pitch) are installed on two strip-lines and coupled to 2 × 8 LYSO scintillators (5.0 × 5.0 × 10.0 mm 3 with 5.2 mm pitch). The outputs of the strip-line boards are connected to a Domino-Ring-Sampler (DRS4) evaluation board for waveform sampling. Preliminary experimental results show that the effect of interference on the MRI image due to the PET detector is negligible and that PET detector performance is comparable with the results measured outside the MRI scanner.

A digital X-ray imaging system based on silicon strip detectors working in edge-on configuration

Energy Technology Data Exchange (ETDEWEB)

Bolanos, L. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Boscardin, M. [IRST, Fondazione Bruno Kessler, Via Sommarive 18, Povo, 38100 Trento (Italy); Cabal, A.E. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Diaz, M. [InSTEC, Ave. Salvador Allende esq. Luaces, Quinta de los Molinos, Ciudad Habana (Cuba); Grybos, P.; Maj, P. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Prino, F. [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Via P. Giuria 1, 10125 Torino (Italy); Ramello, L. [Dipartimento di Scienze e Tecnologie Avanzate, Universita del Piemonte Orientale, Via T. Michel 11, 15100 Alessandria (Italy)], E-mail: luciano.ramello@mfn.unipmn.it; Szczygiel, R. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland)

2009-09-21

We present the energy resolution and imaging performance of a digital X-ray imaging system based on a 512-strip silicon strip detector (SSD) working in the edge-on configuration. The SSDs tested in the system are 300 {mu}m thick with 1 or 2-cm-long strips and 100 {mu}m pitch. To ensure a very small dead area of the SSD working in edge-on configuration, the detector is cut perpendicular to the strips at a distance of only 20 {mu}m from the end of the strips. The 512-strip silicon detector is read out by eight 64-channel integrated circuits called DEDIX [Grybos et al., IEEE Trans. Nucl. Sci. NS-54 (2007) 1207]. The DEDIX IC operates in a single photon counting mode with two independent amplitude discriminators per channel. The readout electronic channel connected to a detector with effective input capacitance of about 2 pF has an average equivalent noise charge (ENC) of about 163 el. rms and is able to count 1 Mcps of average rate of input pulses. The system consisting of 512 channels has an excellent channel-to-channel uniformity-the effective threshold spread calculated to the charge-sensitive amplifier inputs is 12 el. rms (at one sigma level). With this system a few test images of a phantom have been taken in the 10-30 keV energy range.

Cross-talk studies on FPCB of double-sided silicon micro-strip detector

International Nuclear Information System (INIS)

Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

2014-01-01

Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

Energy Technology Data Exchange (ETDEWEB)

Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Ackley, K.; Camarda, G. S.; Cherches, C.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Mahler, G.; Maritato, M.; Roy, U.; Salwen, C.; Vernon, E.; Yang, G.; James, R. B. [Brookhaven National Laboratory, Upton, New York 11793 (United States); Hodges, D. [University of Texas at El Paso, El Paso, Texas 79968 (United States); Lee, W. [Korea University, Seoul 136-855 (Korea, Republic of); Petryk, M. [SUNY Binghamton, Vestal, New York 13902 (United States)

2015-07-15

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

A readout system for position sensitive measurements of X-ray using silicon strip detectors

CERN Document Server

Dabrowski, W; Grybos, P; Idzik, M; Kudlaty, J

2000-01-01

In this paper we describe the development of a readout system for X-ray measurements using silicon strip detectors. The limitation concerning the inherent spatial resolution of silicon strip detectors has been evaluated by Monte Carlo simulation and the results are discussed. The developed readout system is based on the binary readout architecture and consists of two ASICs: RX32 front-end chip comprising 32 channels of preamplifiers, shapers and discriminators, and COUNT32 counter chip comprising 32 20-bit asynchronous counters and the readout logic. This work focuses on the design and performance of the front-end chip. The RX32 chip has been optimised for a low detector capacitance, in the range of 1-3 pF, and high counting rate applications. It can be used with DC coupled detectors allowing the leakage current up to a few nA per strip. For the prototype chip manufactured in a CMOS process all basic parameters have been evaluated by electronic measurements. The noise below 140 el rms has been achieved for a ...

Analysis of Etched CdZnTe Substrates

Science.gov (United States)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

Micro-strip Metal Foil Detectors for the Beam Profile Monitoring

CERN Document Server

Pugatch, V M; Fedorovitch, O A; Mikhailenko, A V; Prystupa, S V; Pylypchenko, Y

2005-01-01

The Micro-strip Metal Foil Detectors (MMFD) designed and used for the Beam Profile Monitoring (BPM) are discussed. Fast particles hitting a metal strip initiate Secondary Electron Emission (SEE) which occurs at 10 - 50 nm surface layers of a strip. The SEE yield is measured by a sensitive Charge Integrator with built-in current-to-frequency converter (1 Hz per 1 fA). The MMFD (deposited onto the 20 μm thick Si-wafer) with 32 Al strips (10 μm wide, 32 μm pitch) has been used for the BPM of the 32 MeV alpha-particle beam at the MPIfK (Heidelberg) Tandem generator for Single-Event-Upset studies of the BEETLE micro-chip. Similar MMFD (0.5 μm thick Ni-strips) with totally removed Si-wafer (by plasma-chemistry, at the working area of 8 x 10 mm2) has been applied for the on-line X-ray BPM at the HASYLAB (DESY). The number of photons (11.3 GeV, mean X-ray energy 18 keV) producing out of a strip a single SEE was evaluated as (1.5 ±0.5)* 104. MMFD has demonstrated stable...

Test beam results of Silicon Drift Detector prototypes for the ALICE experiment

Energy Technology Data Exchange (ETDEWEB)

Nouais, D.; Bonvicini, V.; Busso, L.; Cerello, P.; Giubellino, P.; Gregorio, A.; Hernandez-Montoya, R.; Idzik, M.; Kolojvari, A.; Mazza, G.; Montano, L. M.; Nilsen, B.S.; Petta, C.; Randazzo, N.; Rashevsky, A.; Reito, S.; Rivetti, A.; Tosello, F.; Trzaska, W.H.; Vacchi, A

1999-08-01

We report preliminary beam test results of linear Silicon Drift Detector prototypes for the ALICE experiment. Linearity, resolution, charge transport and collection, and efficiency have been studied using a minimum ionizing particle beam for a very large area detector prototype read out with the OLA preamplifier/shaper and for another detector read out using a new transimpedance amplifier with a non linear response.

Development of a Compton camera for medical applications based on silicon strip and scintillation detectors

Energy Technology Data Exchange (ETDEWEB)

Krimmer, J., E-mail: j.krimmer@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Ley, J.-L. [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Abellan, C.; Cachemiche, J.-P. [Aix-Marseille Université, CNRS/IN2P3, CPPM UMR 7346, 13288 Marseille (France); Caponetto, L.; Chen, X.; Dahoumane, M.; Dauvergne, D. [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Freud, N. [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA - Lyon, Université Lyon 1, Centre Léon Bérard (France); Joly, B.; Lambert, D.; Lestand, L. [Clermont Université, Université Blaise Pascal, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, BP 10448, F-63000 Clermont-Ferrand (France); Létang, J.M. [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA - Lyon, Université Lyon 1, Centre Léon Bérard (France); Magne, M. [Clermont Université, Université Blaise Pascal, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, BP 10448, F-63000 Clermont-Ferrand (France); and others

2015-07-01

A Compton camera is being developed for the purpose of ion-range monitoring during hadrontherapy via the detection of prompt-gamma rays. The system consists of a scintillating fiber beam tagging hodoscope, a stack of double sided silicon strip detectors (90×90×2 mm{sup 3}, 2×64 strips) as scatter detectors, as well as bismuth germanate (BGO) scintillation detectors (38×35×30 mm{sup 3}, 100 blocks) as absorbers. The individual components will be described, together with the status of their characterization.

Development of readout electronics for monolithic integration with diode strip detectors

International Nuclear Information System (INIS)

Hosticka, B.J.; Wrede, M.; Zimmer, G.; Kemmer, J.; Hofmann, R.; Lutz, G.

1984-03-01

Parallel in - serial out analog readout electronics integrated with silicon strip detectors will bring a reduction of two orders of magnitude in external electronics. The readout concept and the chosen CMOS technology solve the basic problem of low noise and low power requirements. A hybrid solution is an intermediate step towards the final goal of monolithic integration of detector and electronics. (orig.)

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

Incomplete charge collection in an HPGe double-sided strip detector

International Nuclear Information System (INIS)

Hayward, Jason; Wehe, David

2008-01-01

For gamma-ray detection, high-purity germanium (HPGe) has long been the standard for energy resolution, and double-sided strip detectors (DSSDs) offer the possibility of sub-millimeter position resolution. Our HPGe DSSD is 81 mm in diameter, 11-mm thick, and has 3-mm strip pitch with a gap width of 500 μm. In this work, we focus on characterizing just the interactions that occur between collecting strips. Simulation and measurement results for our HPGe DSSD show that the gap between strips is the most position-sensitive region. But, spectra collected from events that occur in and near the gaps are complicated by: (1) incomplete charge-carrier collection, or charge loss; (2) signal variance introduced by charge-carrier cloud size, orientation, and lateral spreading; and (3) the difficulty of distinguishing single interactions from multiple close interactions. Using tightly, collimated beams of monoenergetic gamma rays, the measured energy spectra at the gap center show that incomplete charge collection is significant in our detector at 356 and 662 keV, resulting in degradation of the photopeak efficiency. Additionally, close interactions are identifiable in the spectra. Thus, close interactions must be identified on an event-by-event basis in order to precisely identify gap interaction position or make charge-loss corrections at these energies. Furthermore, spectral differences are observed between anode and cathode gaps, and a possible reason for this asymmetry is proposed

Construction of a full-length prototype of the BESIII drift chamber and on-detector test for the BESIII drift chamber electronics

International Nuclear Information System (INIS)

Qin Zhonghua; Wu Linghui; Liu Jianbei; Chinese Academy of Sciences, Beijing; Yan Zhikang; Hunan Univ., Changsha; Chen Yuanbo; Chen Chang; Xu Meihang; Wang Lan; Ma Xiaoyan; Jin Yan; Liu Rongguang; Tang Xiao; Zhang Guifang; Zhu Qiming; Sheng Huayi; Zhu Kejun

2007-01-01

A full-length prototype of the BESIII drift chamber was built. The experience gained on gas sealing, high voltage supply and front-end electronics installation should be greatly beneficial to the successful construction of the BESIII drift chamber. An on-detector test of the BESIII drift chamber electronics was carried out with the constructed prototype chamber. The noise performance, drift time and charge measurements, and electronics gains were examined specifically. The final test results indicate that the electronics have a good performance and can satisfy their design requirements. (authors)

Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Science.gov (United States)

Poley, L.; Blue, A.; Bates, R.; Bloch, I.; Díez, S.; Fernandez-Tejero, J.; Fleta, C.; Gallop, B.; Greenall, A.; Gregor, I.-M.; Hara, K.; Ikegami, Y.; Lacasta, C.; Lohwasser, K.; Maneuski, D.; Nagorski, S.; Pape, I.; Phillips, P. W.; Sperlich, D.; Sawhney, K.; Soldevila, U.; Ullan, M.; Unno, Y.; Warren, M.

2016-07-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6·1034 cm-2s-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1·1016 1 MeV neq/cm2. In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

International Nuclear Information System (INIS)

Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

1991-01-01

Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

Science.gov (United States)

Lordi, Vincenzo

2013-03-01

The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

Performance tests of developed silicon strip detector by using a 150 GeV electron beam

International Nuclear Information System (INIS)

Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

2008-01-01

We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

A Proposal to Upgrade the Silicon Strip Detector

International Nuclear Information System (INIS)

Matis, Howard; Michael, LeVine; Jonathan, Bouchet; Stephane, Bouvier; Artemios, Geromitsos; Gerard, Guilloux; Sonia, Kabana; Christophe, Renard; Howard, Matis; Jim, Thomas; Vi Nham, Tram

2007-01-01

The STAR Silicon Strip Detector (SSD) was built by a collaboration of Nantes, Strasbourg and Warsaw collaborators. It is a beautiful detector; it can provide 500 mu m scale pointing resolution at the vertex when working in combination with the TPC. It was first used in Run 4, when half the SSD was installed in an engineering run. The full detector was installed for Run 5 (the Cu-Cu run) and the operation and performance of the detector was very successful. However, in preparation for Run 6, two noisy ladders (out of 20) were replaced and this required that the SSD be removed from the STAR detector. The re-installation of the SSD was not fully successful and so for the next two Runs, 6 and 7, the SSD suffered a cooling system failure that allowed a large fraction of the ladders to overheat and become noisy, or fail. (The cause of the SSD cooling failure was rather trivial but the SSD could not be removed between Runs 6 and 7 due to the inability of the STAR detector to roll along its tracks at that time.)

Correlation of point defects in CdZnTe with charge transport:application to room-temperature x-ray and gamma-ray. Final Technical Report

International Nuclear Information System (INIS)

Giles, Nancy C.

2003-01-01

The primary goal of this project has been to characterize and identify point defects in CdZnTe. There are two experimental focus areas: (1) photoluminescence and EPR. Results are compared with radiation detector performance. Applications requiring room-temperature x-ray and gamma-ray detectors are rapidly increasing and now include nuclear medicine, space sciences, national security, environmental remediation, nonproliferation inspections, etc. To meet these needs, a new generation of detectors based on single crystals of cadmium zinc telluride (Cd 1-x Zn x Te) is being developed. This semiconductor material possesses many desirable detector properties, such as constituent atoms with high atomic number (Z), a sufficiently large band gap to minimize leakage currents at room temperature, and high intrinsic mobility-lifetime (p) products for electrons and holes. However, despite the tremendous promise of this material, problems clearly exist. CdZnTe crystals are difficult to grow in large sizes and with ultra-high purity. There is a need to further lower the leakage currents in detector-grade material and also to increase the efficiency of charge collection. In general, all aspects of carrier trapping in this material must be understood and minimized. Point defects are a primary reason CdZnTe crystals have not yet reached their expected levels of performance. Thus, a better understanding of the role of point defects and the larger microstructure defects on the transport of electrons and holes will lead to improved detector-grade CdZnTe. The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier μτ products. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence

SILICON DRIFT DETECTORS FOR THE STAR/SVT EXPERIMENT AT RHIC

International Nuclear Information System (INIS)

TAKAHASHI, J.

1998-01-01

Large area linear Silicon Drift Detectors (SDD) were developed to be used in the Silicon Vertex Tracker (SVT) of the STAR experiment at the BNL relativistic heavy ion collider (RHIC). The SDD is in its final design and has been submitted for large scale production. Test results show that the detector exhibits excellent position resolution and low noise. A special characterization procedure was developed to test detector wafers in order to select good detectors for the SVT. Recently, 15 STAR/SVT SDD's were assembled as a tracking device in a BNL-AGS heavy ion experiment (E896). It is the first tracking application of these detectors and their corresponding front-end electronics in an experimental environment. Preliminary results indicating good detector performance are shown and discussed in this paper

Test beam results of silicon drift detector prototypes for the ALICE experiment

CERN Document Server

Nouais, D; Busso, L; Cerello, P G; Giubellino, P; Gregorio, A; Hernández-Montoya, R; Idzik, M; Kolojvari, A A; Mazza, G; Montaño-Zetina, L M; Nilsson, B S; Petta, C; Randazzo, N; Rashevsky, A; Reito, S; Rivetti, A; Tosello, F; Trzaska, W H; Vacchi, A

1999-01-01

We report preliminary beam test results of linear silicon drift detector prototypes for the ALICE experiment. Linearity, resolution, charge transport and collection, and efficiency have been studied using a minimum ionizing particle beam for a very large area detector prototype read out with the OLA preamplifier/shaper and for another detector read out using a new transimpedance amplifier with a nonlinear response. (14 refs).

Large area silicon drift detectors for x-rays -- New results

International Nuclear Information System (INIS)

Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.; Segal, J.D.; Kenney, C.J.; Hedman, B.; Hodgson, K.O.

1998-01-01

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range 75 to 25 C using Peltier cooling, and from 0.125 to 6 micros amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm 2 and 1 cm 2 detectors, respectively (at 5.9 keV, -75 C, 6 micros shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was < 0.5%

Charge collection in the Silicon Drift Detectors of the ALICE experiment

CERN Document Server

Alessandro, B; Batigne, G; Beolé, S; Biolcati, E; Cerello, P; Coli, S; Corrales Morales, Y; Crescio, E; De Remigis, P; Falchieri, D; Giraudo, G; Giubellino, P; Lea, R; Marzari Chiesa, A; Masera, M; Mazza, G; Ortona, G; Prino, F; Ramello, L; Rashevsky, A; Riccati, L; Rivetti, A; Senyukov, S; Siciliano, M; Sitta, M; Subieta, M; Toscano, L; Tosello, F

2010-01-01

A detailed study of charge collection efficiency has been performed on the Silicon Drift Detectors (SDD) of the ALICE experiment. Three different methods to study the collected charge as a function of the drift time have been implemented. The first approach consists in measuring the charge at different injection distances moving an infrared laser by means of micrometric step motors. The second method is based on the measurement of the charge injected by the laser at fixed drift distance and varying the drift field, thus changing the drift time. In the last method, the measurement of the charge deposited by atmospheric muons is used to study the charge collection efficiency as a function of the drift time. The three methods gave consistent results and indicated that no charge loss during the drift is observed for the sensor types used in 99% of the SDD modules mounted on the ALICE Inner Tracking System. The atmospheric muons have also been used to test the effect of the zero-suppression applied to reduce the d...

Charge Division Readout of a Two-Dimensional Germanium Strip Detector

National Research Council Canada - National Science Library

Kroeger, R. A; Inderhees, S. E; Johnson, W. N; Kinzer, R. L; Kurfess, J. D; Gehrels, N

1993-01-01

.... The four data channels are stored as an event list for subsequent processing. We form a response map over the detector surface in order to locate the position of each interaction with the spatial resolution of the strip pitch, in our case 9 mm...

Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

2011-09-11

The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

International Nuclear Information System (INIS)

Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

2008-01-01

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

The CdZnTe Detector with Slit Collimator for Measure Distribution of the Specific Activity Radionuclide in the Ground

Science.gov (United States)

Stepanov, V. E.; Volkovich, A. G.; Potapov, V. N.; Semin, I. A.; Stepanov, A. V.; Simirskii, Iu. N.

2018-01-01

From 2011 in the NRC "Kurchatov Institute" carry out the dismantling of the MR multiloop research reactor. Now the reactor and all technological equipment in the premises of the reactor were dismantled. Now the measurements of radioactive contamination in the reactor premises are made. The most contaminated parts of premises - floor and the ground beneath it. To measure the distribution of specific activity in the ground the CdZnTe detector (volume 500MM3) was used. Detector placed in a lead shielding with a slit collimation hole. The upper part of shielding is made movable to close and open the slit of the collimator. At each point two measurements carried out: with open and closed collimator. The software for determination specific activity of radionuclides in ground was developed. The mathematical model of spectrometric system based on the Monte-Carlo method. Measurements of specific activity of ground were made. Using the results of measurements the thickness of the removed layer of ground and the amount of radioactive waste were calculated.

Advection endash diffusion past a strip. II. Oblique incidence

International Nuclear Information System (INIS)

Knessl, C.; Keller, J.B.

1997-01-01

Advection and diffusion of particles past an impenetrable strip is considered when the strip is oblique to the advection or drift velocity. The particle concentration p(x,y) is determined asymptotically for large values of vL/D, where v is the drift velocity, D is the diffusion coefficient, and 2L is the width of the strip. The results complement those of Part I, which treated a strip normal to the drift velocity. copyright 1997 American Institute of Physics

Position-sensitive silicon strip detector characterization using particle beams

CERN Document Server

Maenpaeae, Teppo

2012-01-01

Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution.They are widely used in many high-energy physics experiments. Modern high energyphysics experiments impose harsh operation conditions on the detectors, e.g., of LHCexperiments. The high radiation doses cause the detectors to eventually fail as a resultof excessive radiation damage. This has led to a need to study radiation tolerance usingvarious techniques. At the same time, a need to operate sensors approaching the endtheir lifetimes has arisen.The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal,measurement apparatuses are built. The devices are then used to measure the propertiesof irradiated detectors. The measurement data are analyzed, and conclusions are drawn.Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle acceler...

Development of a 3D CZT detector prototype for Laue Lens telescope

DEFF Research Database (Denmark)

Caroli, Ezio; Auricchio, Natalia; Del Sordo, Stefano

2010-01-01

We report on the development of a 3D position sensitive prototype suitable as focal plane detector for Laue lens telescope. The basic sensitive unit is a drift strip detector based on a CZT crystal, (~19×8 mm2 area, 2.4 mm thick), irradiated transversally to the electric field direction. The anode...

Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

CERN Document Server

Sokolov, Oleksiy

2006-01-01

The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5∼TeV per nucleon. Particle tracking around the interaction region at radii r<45 cm is done by the Inner Tracking System (ITS), consisting of six cylindrical layers of silicon detectors. The outer two layers of the ITS use double-sided silicon strip detectors. This thesis focuses on testing of these detectors and performance studies of the detector module prototypes at the beam test. Silicon strip detector layers will require about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bond...

Assembly and Electrical Tests of the First Full-size Forward Module for the ATLAS ITk Strip Detector

CERN Document Server

Garcia-Argos, Carlos; The ATLAS collaboration

2018-01-01

The ATLAS experiment will replace the existing Inner Detector by an all-silicon detector named the Inner Tracker (ITk) for the High Luminosity LHC upgrades. In the outer region of the Inner Tracker is the strip detector, which consists of a four layer barrel and six discs to each side of the barrel, with silicon-strip modules as basic units. Each module is composed of a sensor and one or more flex circuits that hold the read-out electronics. In the experiment, the modules are mounted on support structures with integrated power and cooling. The modules are designed with geometries that accommodate the central and forward regions, with rectangular sensors in the barrels and wedge shaped sensors in the end-caps. The strips lengths and pitch sizes vary according to the occupancy of the region. In this contribution, we present the construction and results of the electrical tests of the first full-size module of the innermost forward region, named \\textit{Ring 0} in the ATLAS ITk strip detector nomenclature. This m...

Assembly and Electrical Tests of the First Full-size Forward Module for the ATLAS ITk Strip Detector

CERN Document Server

Garcia-Argos, Carlos; The ATLAS collaboration

2017-01-01

The ATLAS experiment will replace the existing Inner Detector by an all-silicon detector named the Inner Tracker (ITk) for the High Luminosity LHC upgrades. In the outer region of the Inner Tracker is the strip detector, which consists of a four layer barrel and six discs to each side of the barrel, with silicon-strip modules as basic units. Each module is composed of a sensor and one or more flex circuits that hold the read-out electronics. In the experiment, the modules are mounted on support structures with integrated power and cooling. The modules are designed with geometries that accommodate the central and forward regions, with rectangular sensors in the barrels and wedge shaped sensors in the end-caps. The strips lengths and pitch sizes vary according to the occupancy of the region. In this contribution, we present the construction and the results of the electrical tests of the first full-size module of the innermost forward region, named Ring 0 in the ATLAS ITk strip detector nomenclature. This module...

Performance of the Charge Injectors of the ALICE Silicon Drift Detectors

Czech Academy of Sciences Publication Activity Database

Kushpil, Svetlana

2012-01-01

Roč. 37, č. 37 (2012), s. 970-975 ISSN 1875-3892. [TIPP 2011 - Technology and Instrumentation in Particle Physics 2011. Chicago, 09.06.2011-14.06.2011] R&D Projects: GA MŠk LA08015 Institutional support: RVO:61389005 Keywords : semiconductor detector * silicon drift detector * MOS charge injector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders http://www.sciencedirect.com/science/article/pii/S1875389212017920

Application of a wedge strip anode in micro-pattern gaseous detectors

International Nuclear Information System (INIS)

Tian Yang; Yang Yigang; Li Yulan; Li Yuanjing

2013-01-01

The wedge strip anode (WSA) has been widely used in 2-D position-sensitive detectors. A circular WSA with an effective diameter of 52 mm is successfully coupled to a tripe gas electron multiplier (GEM) detector through a simple resistive layer. A spatial resolution of 440 μm (FWHM) is achieved for a 10 kVp X-ray using 1 atm Ar:CO 2 =70:30 gas. The simple electronics of only three channels makes it very useful in applications strongly requiring simple interface design, e.g. sealed tubes and high pressure detectors. (authors)

Silicon strip detector for a novel 2D dosimetric method for radiotherapy treatment verification

Science.gov (United States)

Bocci, A.; Cortés-Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Arráns, R.; Alvarez, M. A. G.; Abou-Haïdar, Z.; Quesada, J. M.; Pérez Vega-Leal, A.; Pérez Nieto, F. J.

2012-05-01

The aim of this work is to characterize a silicon strip detector and its associated data acquisition system, based on discrete electronics, to obtain in a near future absorbed dose maps in axial planes for complex radiotherapy treatments, using a novel technique. The experimental setup is based on two phantom prototypes: the first one is a polyethylene slab phantom used to characterize the detector in terms of linearity, percent depth dose, reproducibility, uniformity and penumbra. The second one is a cylindrical phantom, specifically designed and built to recreate conditions close to those normally found in clinical environments, for treatment planning assessment. This system has been used to study the dosimetric response of the detector, in the axial plane of the phantom, as a function of its angle with respect to the irradiation beam. A software has been developed to operate the rotation of this phantom and to acquire signals from the silicon strip detector. As an innovation, the detector was positioned inside the cylindrical phantom parallel to the beam axis. Irradiation experiments were carried out with a Siemens PRIMUS linac operating in the 6 MV photon mode at the Virgen Macarena Hospital. Monte Carlo simulations were performed using Geant4 toolkit and results were compared to Treatment Planning System (TPS) calculations for the absorbed dose-to-water case. Geant4 simulations were used to estimate the sensitivity of the detector in different experimental configurations, in relation to the absorbed dose in each strip. A final calibration of the detector in this clinical setup was obtained by comparing experimental data with TPS calculations.

Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

Science.gov (United States)

Ødegaard, Trygve; Tafjord, Harald; Buran, Torleiv

1995-02-01

As part of the luminosity monitor, SAT, in the DELPHI [1] experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beans. The tracking detector reconstructs from the interaction point and the calorimeter measures the corresponding particles' energies. The SAT Tracker [2] consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder [3,4]. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. We describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques.

Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

International Nuclear Information System (INIS)

Oedegaard, T.; Tafjord, H.; Buran, T.

1994-12-01

As part of the luminosity monitor SAT in the DELPHI experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beams. The tracking detector reconstructs tracks from the interaction point and the calorimeter measures the corresponding particles' energies.The SAT Tracker consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. The authors describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques. 11 refs., 5 figs., 4 tabs

The new silicon strip detectors for the CMS tracker upgrade

International Nuclear Information System (INIS)

Dragicevic, M.

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the tracker caused by the increase in luminosity which is proposed as an upgrade to the LHC accelerator (sLHC). This chapter motivates the work I have conducted and clarifies why the solutions proposed by myself are important contributions to the upgrade of the CMS tracker. The following chapters present the concepts that are necessary to operate the silicon strip sensors at sLHC luminosities and additional improvements to the construction and quality assurance of the sensors and the detector modules. The most important concepts and works presented in chapters 7 to 9 are: Development of a software framework to enable the flexible and quick design of test structures and sensors. Selecting a suitable sensor material which is sufficiently radiation hard. Design, implementation and production of a standard set of test structures to enable the quality assurance of such sensors and any future developments. Electrical characterisation of the test structures and analysis

First implementation of the MEPHISTO binary readout architecture for strip detectors

International Nuclear Information System (INIS)

Fischer, P.

2001-01-01

Today's front-end readout chips for multi-channel silicon strip detectors use pipeline-like structures for temporary storage of hit information until arrival of a trigger signal. This approach leads to large-area chips when long trigger latencies are necessary. The MEPHISTO architecture uses a different concept. Hit strips are identified in real time and only the relevant binary hit information is stored in FIFOs. For the typical occupancies in LHC detectors of ∼1 hit per clock cycle this architecture requires less than half the chip area of a typical binary pipeline. This reduces the system cost considerably. At a lower data rate, operation with very long trigger latencies or even without any trigger is possible due to the real-time data sparsification. The Mephisto II architecture is presented and the expected performance is discussed

Timing characteristics of a two-dimensional multi-wire cathode strip detector for fission fragments

International Nuclear Information System (INIS)

Vind, R.P.; Joshi, B.N.; Jangale, R.V.; Inkar, A.L.; Prajapati, G.K.; John, B.V.; Biswas, D.C.

2014-01-01

In the recent past, a gas filled two-dimensional multi-wire cathode strip detector (MCSD) was developed for the detection of fission fragments (FFs). The position resolution was found to be about 1.0 and 1.5 mm in X and Y directions respectively. The detector has three electrode planes consisting of cathode strip (X-plane), anode wires and split-cathode wires (Y-plane). Each thin wire of the anode plane placed between the two cathode planes is essentially independent and behaves like a proportional counter. The construction of the detector in detail has been given in our earlier paper. The position information has been obtained by employing high impedance discrete delay line read out method for extracting position information in X and Y-directions. In this work, the timing characteristics of MCSD detector are reported to explore the possible use of this detector for the measurement of the mass of the fission fragments produced in heavy ion induced fission reactions

Development of the RAIDS extreme ultraviolet wedge and strip detector. [Remote Atmospheric and Ionospheric Detector System

Science.gov (United States)

Kayser, D. C.; Chater, W. T.; Christensen, A. B.; Howey, C. K.; Pranke, J. B.

1988-01-01

In the next few years the Remote Atmospheric and Ionospheric Detector System (RAIDS) package will be flown on a Tiros spacecraft. The EUV spectrometer experiment contains a position-sensitive detector based on wedge and strip anode technology. A detector design has been implemented in brazed alumina and kovar to provide a rugged bakeable housing and anode. A stack of three 80:1 microchannel plates is operated at 3500-4100 V. to achieve a gain of about 10 to the 7th. The top MCP is to be coated with MgF for increased quantum efficiency in the range of 50-115 nm. A summary of fabrication techniques and detector performance characteristics is presented.

High-rate performance of muon drift tube detectors

International Nuclear Information System (INIS)

Schwegler, Philipp

2014-01-01

The Large Hadron Collider (LHC) at the European Centre for Particle Physics, CERN, collides protons with an unprecedentedly high centre-of-mass energy and luminosity. The collision products are recorded and analysed by four big experiments, one of which is the ATLAS detector. In parallel with the first LHC run from 2009 to 2012, which culminated in the discovery of the last missing particle of the Standard Model of particle physics, the Higgs boson, planning of upgrades of the LHC for higher instantaneous luminosities (HL-LHC) is already progressing. The high instantaneous luminosity of the LHC puts high demands on the detectors with respect to radiation hardness and rate capability which are further increased with the luminosity upgrade. In this thesis, the limitations of the Muon Drift Tube (MDT) chambers of the ATLAS Muon Spectrometer at the high background counting rates at the LHC and performance of new small diameter muon drift tube (sMDT) detectors at the even higher background rates at HL-LHC are studied. The resolution and efficiency of sMDT chambers at high γ-ray and proton irradiation rates well beyond the ones expected at HL-LHC have been measured and the irradiation effects understood using detailed simulations. The sMDT chambers offer an about an order of magnitude better rate capability and are an ideal replacement for the MDT chambers because of compatibility of services and read-out. The limitations of the sMDT chambers are now in the read-out electronics, taken from the MDT chambers, to which improvements for even higher rate capability are proposed.

The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

International Nuclear Information System (INIS)

Bolotnikov, A.E.; Hubert Chen, C.M.; Cook, W.R.; Harrison, F.A.; Kuvvetli, I.; Schindler, S.M.; Stahle, C.M.; Parker, B.H.

2003-01-01

Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors

Silicon drift detectors coupled to CsI(Tl) scintillators for spaceborne gamma-ray detectors

International Nuclear Information System (INIS)

Marisaldi, M.; Fiorini, C.; Labanti, C.; Longoni, A.; Perotti, F.; Rossi, E.; Soltau, H.

2006-01-01

Silicon Drift Detectors (SDDs), thanks to their peculiar low noise characteristics, have proven to be excellent photodetectors for CsI(Tl) scintillation light detection. Two basic detector configurations have been developed: either a single SDD or a monolithic array of SDDs coupled to a single CsI(Tl) crystal. A 16 independent detectors prototype is under construction, designed to work in conjunction with the MEGA Compton telescope prototype under development at MPE, Garching, Germany. A single SDD coupled to a CsI(Tl) crystal has also been tested as a monolithic detector with an extended energy range between 1.5 keV and 1 MeV. The SDD is used as a direct X-ray detector for low energy photons interacting in silicon and as a scintillation light photodetector for photons interacting in the crystal. The type of interaction is identified by means of pulse shape discrimination technique. Detectors based on an array of SDDs coupled to a single CsI(Tl) crystal have also been built. The readout of these detectors is based on the Anger camera technique, and submillimeter spatial resolution can be achieved. The two detectors' approaches and their applications will be described

Petalet prototype for the ATLAS silicon strip detector upgrade

Energy Technology Data Exchange (ETDEWEB)

Sperlich, Dennis [Humboldt-Universitaet zu Berlin (Germany); Gregor, Ingrid-Maria; Bloch, Ingo; Keller, John Stakely; Lohwasser, Kristin; Poley, Louise; Zakharchuk, Nataliia; Diez Cornell, Sergio [DESY (Germany); Hauser, Marc Manuel; Mori, Riccardo; Kuehl, Susanne; Parzefall, Ulrich [Albert-Ludwigs Universitaet Freiburg (Germany)

2015-07-01

To achieve more precise measurements and to search new physics phenomena, the luminosity at the LHC is expected to be increased during a series of upgrades in the next years. The latest scheduled upgrade, called the High Luminosity LHC (HL-LHC) is proposed to provide instantaneous luminosity of 5 x 10{sup 34} cm{sup 2}s{sup -1}. The increased luminosity and the radiation damage will affect the current Inner Tracker. In order to cope with the higher radiation dose and occupancy, the ATLAS experiment plans to replace the current Inner Detector with a new all-silicon tracker consisting of ∝8 m{sup 2} pixel and ∝192 m{sup 2} strip detectors. In response to the needs, highly modular structures will be used for the strip system, called Staves for the barrel region and Petals for the end-caps region. A small-scaled prototype for the Petal, the Petalet, is built to study some specialties of this complex wedge-shaped structures. The Petalet consists of one large and two small sized sensors. This report focuses on the recent progress in the prototyping of the Petalet and their electrical performances.

Detectors for particle radiation. 2. rev. ed.

International Nuclear Information System (INIS)

Kleinknecht, K.

1987-01-01

This book is a description of the set-up and mode of action of detectors for charged particles and gamma radiation for students of physics, as well as for experimental physicists and engineers in research and industry: Ionization chamber, proportional counter, semiconductor counter; proportional chamber, drift chamber, bubble chamber, spark chamber, photomultiplier, laser ionization, silicion strip detector; Cherenkov counter, transition radiation detector; electron-photon-cascade counter, hadron calorimeter; magnetic spectrometer; applications in nuclear medicine, geophysics, space travel, atom physics, nuclear physics, and high-energy physics. With 149 figs., 20 tabs [de

Development of electron temperature measuring system by silicon drift detector

International Nuclear Information System (INIS)

Song Xianying; Yang Jinwei; Liao Min

2007-12-01

Soft X-ray spectroscopy with two channels Silicon Drift Detector (SDD) are adopted for electron temperature measuring on HL-2A tokamak in 2005. The working principle, design and first operation of the SDD soft X-ray spectroscopy are introduced. The measuring results of electron temperature are also presented. The results show that the SDD is very good detector for electron temperature measuring on HL-2A tokamak. These will become a solid basic work to establish SDD array for electron temperature profiling. (authors)

Beam tests of ATLAS SCT silicon strip detector modules

CERN Document Server

Campabadal, F; Key, M; Lozano, M; Martínez, C; Pellegrini, G; Rafí, J M; Ullán, M; Johansen, L; Pommeresche, B; Stugu, B; Ciocio, A; Fadeev, V; Gilchriese, M G D; Haber, C; Siegrist, J; Spieler, H; Vu, C; Bell, P J; Charlton, D G; Dowell, John D; Gallop, B J; Homer, R J; Jovanovic, P; Mahout, G; McMahon, T J; Wilson, J A; Barr, A J; Carter, J R; Fromant, B P; Goodrick, M J; Hill, J C; Lester, C G; Palmer, M J; Parker, M A; Robinson, D; Sabetfakhri, A; Shaw, R J; Anghinolfi, F; Chesi, Enrico Guido; Chouridou, S; Fortin, R; Grosse-Knetter, J; Gruwé, M; Ferrari, P; Jarron, P; Kaplon, J; MacPherson, A; Niinikoski, T O; Pernegger, H; Roe, S; Rudge, A; Ruggiero, G; Wallny, R; Weilhammer, P; Bialas, W; Dabrowski, W; Grybos, P; Koperny, S; Blocki, J; Brückman, P; Gadomski, S; Godlewski, J; Górnicki, E; Malecki, P; Moszczynski, A; Stanecka, E; Stodulski, M; Szczygiel, R; Turala, M; Wolter, M; Ahmad, A; Benes, J; Carpentieri, C; Feld, L; Ketterer, C; Ludwig, J; Meinhardt, J; Runge, K; Mikulec, B; Mangin-Brinet, M; D'Onofrio, M; Donega, M; Moêd, S; Sfyrla, A; Ferrère, D; Clark, A G; Perrin, E; Weber, M; Bates, R L; Cheplakov, A P; Saxon, D H; O'Shea, V; Smith, K M; Iwata, Y; Ohsugi, T; Kohriki, T; Kondo, T; Terada, S; Ujiie, N; Ikegami, Y; Unno, Y; Takashima, R; Brodbeck, T; Chilingarov, A G; Hughes, G; Ratoff, P; Sloan, T; Allport, P P; Casse, G L; Greenall, A; Jackson, J N; Jones, T J; King, B T; Maxfield, S J; Smith, N A; Sutcliffe, P; Vossebeld, Joost Herman; Beck, G A; Carter, A A; Lloyd, S L; Martin, A J; Morris, J; Morin, J; Nagai, K; Pritchard, T W; Anderson, B E; Butterworth, J M; Fraser, T J; Jones, T W; Lane, J B; Postranecky, M; Warren, M R M; Cindro, V; Kramberger, G; Mandic, I; Mikuz, M; Duerdoth, I P; Freestone, J; Foster, J M; Ibbotson, M; Loebinger, F K; Pater, J; Snow, S W; Thompson, R J; Atkinson, T M; Bright, G; Kazi, S; Lindsay, S; Moorhead, G F; Taylor, G N; Bachindgagyan, G; Baranova, N; Karmanov, D; Merkine, M; Andricek, L; Bethke, Siegfried; Kudlaty, J; Lutz, Gerhard; Moser, H G; Nisius, R; Richter, R; Schieck, J; Cornelissen, T; Gorfine, G W; Hartjes, F G; Hessey, N P; de Jong, P; Muijs, A J M; Peeters, S J M; Tomeda, Y; Tanaka, R; Nakano, I; Dorholt, O; Danielsen, K M; Huse, T; Sandaker, H; Stapnes, S; Bargassa, Pedrame; Reichold, A; Huffman, T; Nickerson, R B; Weidberg, A; Doucas, G; Hawes, B; Lau, W; Howell, D; Kundu, N; Wastie, R; Böhm, J; Mikestikova, M; Stastny, J; Broklová, Z; Broz, J; Dolezal, Z; Kodys, P; Kubík, P; Reznicek, P; Vorobel, V; Wilhelm, I; Chren, D; Horazdovsky, T; Linhart, V; Pospísil, S; Sinor, M; Solar, M; Sopko, B; Stekl, I; Ardashev, E N; Golovnya, S N; Gorokhov, S A; Kholodenko, A G; Rudenko, R E; Ryadovikov, V N; Vorobev, A P; Adkin, P J; Apsimon, R J; Batchelor, L E; Bizzell, J P; Booker, P; Davis, V R; Easton, J M; Fowler, C; Gibson, M D; Haywood, S J; MacWaters, C; Matheson, J P; Matson, R M; McMahon, S J; Morris, F S; Morrissey, M; Murray, W J; Phillips, P W; Tyndel, M; Villani, E G; Dorfan, D E; Grillo, A A; Rosenbaum, F; Sadrozinski, H F W; Seiden, A; Spencer, E; Wilder, M; Booth, P; Buttar, C M; Dawson, I; Dervan, P; Grigson, C; Harper, R; Moraes, A; Peak, L S; Varvell, K E; Chu Ming Lee; Hou Li Shing; Lee Shih Chang; Teng Ping Kun; Wan Chang Chun; Hara, K; Kato, Y; Kuwano, T; Minagawa, M; Sengoku, H; Bingefors, N; Brenner, R; Ekelöf, T J C; Eklund, L; Bernabeu, J; Civera, J V; Costa, M J; Fuster, J; García, C; García, J E; González-Sevilla, S; Lacasta, C; Llosa, G; Martí i García, S; Modesto, P; Sánchez, J; Sospedra, L; Vos, M; Fasching, D; González, S; Jared, R C; Charles, E

2005-01-01

The design and technology of the silicon strip detector modules for the Semiconductor Tracker (SCT) of the ATLAS experiment have been finalised in the last several years. Integral to this process has been the measurement and verification of the tracking performance of the different module types in test beams at the CERN SPS and the KEK PS. Tests have been performed to explore the module performance under various operating conditions including detector bias voltage, magnetic field, incidence angle, and state of irradiation up to 3 multiplied by 1014 protons per square centimetre. A particular emphasis has been the understanding of the operational consequences of the binary readout scheme.

ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS

International Nuclear Information System (INIS)

DE GERONIMO, G.; O CONNOR, P.; KANDASAMY, A.; GROSHOLZ, J.

2002-01-01

A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output baseline and high output driving capability. The general-purpose versions include programmable gain and peaking time. The read-out multichannel ASICs provide fully data driven high accuracy amplitude and time measurements, multiplexing and time domain derandomization of the shaped pulses. They implement a fast arbitration scheme and an array of innovative two-phase offset-free rail-to-rail analog peak detectors for buffering and absorption of input rate fluctuations, thus greatly relaxing the rate requirement on the external ADC. Pulse amplitude, hit timing, pulse risetime, and channel address per processed pulse are available at the output in correspondence of an external readout request. Prototype chips have been fabricated in 0.5 and 0.35 (micro)m CMOS and tested. Design concepts and experimental results are discussed

Design, fabrication and characterization of multi-guard-ring furnished p+n-n+ silicon strip detectors for future HEP experiments

Science.gov (United States)

Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

2016-07-01

Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent vertexing and high precision tracking information. In future HEP experiments like upgrade of the Compact Muon Solenoid experiment (CMS) at the Large Hadron Collider (LHC), CERN and the proposed International Linear Collider (ILC), the Si tracking detectors will be operated in a very harsh radiation environment, which leads to both surface and bulk damage in Si detectors which in turn changes their electrical properties, i.e. change in the full depletion voltage, increase in the leakage current and decrease in the charge collection efficiency. In order to achieve the long term durability of Si-detectors in future HEP experiments, it is required to operate these detectors at very high reverse biases, beyond the full depletion voltage, thus requiring higher detector breakdown voltage. Delhi University (DU) is involved in the design, fabrication and characterization of multi-guard-ring furnished ac-coupled, single sided, p+n-n+ Si strip detectors for future HEP experiments. The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco). The Si strip detectors are fabricated with eight-layers mask process using the planar fabrication technology by Bharat Electronic Lab (BEL), India. Further an electrical characterization set-up is established at DU to ensure the quality performance of fabricated Si strip detectors and test structures. In this work measurement results on non irradiated Si Strip detectors and test structures with multi-guard-rings using Current Voltage (IV) and Capacitance Voltage (CV) characterization set-ups are discussed. The effect of various design parameters, for example guard-ring spacing, number of guard-rings and metal overhang on breakdown voltage of test structures have been studied.

Beam test results of the irradiated Silicon Drift Detector for ALICE

OpenAIRE

Kushpil, S.; Crescio, E.; Giubellino, P.; Idzik, M.; Kolozhvari, A.; Kushpil, V.; Martinez, M. I.; Mazza, G.; Mazzoni, A.; Meddi, F.; Nouais, D.; Petracek, V.; Piemonte, C.; Rashevsky, A.; Riccati, L.

2005-01-01

The Silicon Drift Detectors will equip two of the six cylindrical layers of high precision position sensitive detectors in the ITS of the ALICE experiment at LHC. In this paper we report the beam test results of a SDD irradiated with 1 GeV electrons. The aim of this test was to verify the radiation tolerance of the device under an electron fluence equivalent to twice particle fluence expected during 10 years of ALICE operation.

Long-drift calorimeter modules for the Soudan 2 nucleon decay detector

International Nuclear Information System (INIS)

Hoftiezer, J.

1985-01-01

The first full size 5-ton detector modules for the Soudan 2 nucleon decay experiment have been assembled and operated. Modules consist of a hexagonal array of drift tubes and corrugated steel, instrumented to read out three-dimensional track positions and pulse height. These will be assembled to form an isotropic, continuously sensitive, self-triggering detector. Details of the design, construction, operation and performance of the modules are discussed. 7 refs., 10 figs

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

OpenAIRE

Poley, Luise; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid-Maria; Jones, Tim; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

2015-01-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy gl...

The charge collection in single side silicon microstrip detectors

CERN Document Server

Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

2003-01-01

The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

Digital autoradiography using silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Overdick, M.

1998-05-01

Spatially resolving radiation detection systems operating in real time can be used to acquire autoradiographic images. An overview over alternatives to traditional autoradiography is given and the special features of these filmless methods are discussed. On this basis the design of a system for digital autoradiography using silicon strip detectors is presented. Special emphasis is put on the physical background of the detection process in the semiconductor and on the self-triggering read-out technique. The practical performance of the system is analyzed with respect to energy and spatial resolution. This analysis is complemented by case studies from cell biology (especially electrophoresis), botany and mineralogy. Also the results from a time-resolved autoradiographic experiment are presented. (orig.) 80 refs.

LIGHT INDUCED TELLURIUM ENRICHMENT ON CDZNTE CRYSTAL SURFACES DETECTED BY RAMAN SPECTROSCOPY

International Nuclear Information System (INIS)

Hawkins, S; Eliel Villa-Aleman, E; Martine Duff, M; Douglas Hunter, D

2007-01-01

Synthetic CdZnTe or 'CZT' crystals can be grown under controlled conditions to produce high quality crystals to be used as room temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro Raman spectroscopy. The growth of Te rich areas on the surface was induced by low powered lasers. The growth was observed versus time with low power Raman scattering and was observed immediately under higher power conditions. The detector response was also measured after induced Te enrichment

Design and tests of the z-coordinate drift chamber system for the OPAL central detector at LEP

International Nuclear Information System (INIS)

Mes, H.; Dixit, M.S.; Godfrey, L.; Hanna, D.; Hargrove, C.K.; Losty, M.J.; Oakham, F.G.; Bavaria, G.; Jeremie, H.; Lessard, L.; Lorazo, B.; Martin, J.P.

1988-01-01

A system of drift chambers has been designed to make high resolution measurements of the z-coordinates of charged tracks at the outer radius of the OPAL central detector at LEP. The unit module of this detector is a 25 cm drift length bidirectional cell with six sense wires in a thin 50 cm wide by 29 mm high drift slot. Tests indicate that the chamber has a wide and stable electric field operating range and its performance is unaffected by small misalignments between the drift electric field and an external magnetic field. The drift cell was found to have uniform acceptance up to its geometrical boundaries, and the z-resolution for beam tracks normal to the chamber was measured to be in the range of 40-175 μm. (orig.)

LHCb siliicon detectors: the Run 1 to Run 2 transition and first experience of Run 2

CERN Document Server

Rinnert, Kurt

2015-01-01

LHCb is a dedicated experiment to study New Physics in the decays of heavy hadrons at the Large Hadron Collider (LHC) at CERN. The detector includes a high precision tracking system consisting of a silicon-strip vertex detector (VELO) surrounding the pp interaction region, a large- area silicon-strip detector located upstream of a dipole magnet (TT), and three stations of silicon- strip detectors (IT) and straw drift tubes placed downstream (OT). The operational transition of the silicon detectors VELO, TT and IT from LHC Run 1 to Run 2 and first Run 2 experiences will be presented. During the long shutdown of the LHC the silicon detectors have been maintained in a safe state and operated regularly to validate changes in the control infrastructure, new operational procedures, updates to the alarm systems and monitoring software. In addition, there have been some infrastructure related challenges due to maintenance performed in the vicinity of the silicon detectors that will be discussed. The LHCb silicon dete...

Silicon strip detector system for Fermilab E706

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Plants, D; Shepard, P F; Wilkins, R [Pittsburgh Univ., PA (USA); Hossain, S [Northeastern Univ., Boston, MA (USA)

1984-09-15

Fermilab Experiment E706 is an experiment to study direct photon production in hadron-hadron collisions at the Fermilab Tevatron II. A part of the charged particle spectrometer is a silicon strip detector system used to determine the position of interaction vertices in the production target and to provide angular formation about the secondary hadrons produced in a collision. We present some design criteria, as well as the results of tests of a wafer similar to those to be used in the experiment.

Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment

Science.gov (United States)

Kuehn, S.; Benítez, V.; Fernández-Tejero, J.; Fleta, C.; Lozano, M.; Ullán, M.; Lacker, H.; Rehnisch, L.; Sperlich, D.; Ariza, D.; Bloch, I.; Díez, S.; Gregor, I.; Keller, J.; Lohwasser, K.; Poley, L.; Prahl, V.; Zakharchuk, N.; Hauser, M.; Jakobs, K.; Mahboubi, K.; Mori, R.; Parzefall, U.; Bernabéu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz Contell, C.; Soldevila Serrano, U.; Affolder, T.; Greenall, A.; Gallop, B.; Phillips, P. W.; Cindro, V.

2018-03-01

In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.

Assembly of an endcap of the ATLAS silicon strip detector at NIKHEF, Amsterdam.

CERN Multimedia

Ginter, P

2005-01-01

Assembly of an endcap of the ATLAS silicon strip detector (SCT) at NIKHEF, Amsterdam. Technicians are mounting the power distribution cables on the cylinder that houses nine disks with silicon sensors.

Spectral response of multi-element silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Ludewigt, B.A.; Rossington, C.S.; Chapman, K. [Univ. of California, Berkeley, CA (United States)

1997-04-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

Radiation damage status of the ATLAS silicon strip detectors (SCT)

CERN Document Server

Kondo, Takahiko; The ATLAS collaboration

2017-01-01

The Silicon microstrip detector system (SCT) of the ATLAS experiment at LHC has been working well for about 7 years since 2010. The innermost layer has already received a few times of 10**13 1-MeV neutron-equivalent fluences/cm2. The evolutions of the radiation damage effects on strip sensors such as leakage current and full depletion voltages will be presented.

Measurement of the spatial resolution of wide-pitch silicon strip detectors with large incident angle

International Nuclear Information System (INIS)

Kawasaki, T.; Hazumi, M.; Nagashima, Y.

1996-01-01

As a part of R ampersand D for the BELLE experiment at KEK-B, we measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0 degrees to 75 degrees. These detectors have strips with pitches of 50, 125 and 250 μm on the ohmic side. We have obtained the incident angle dependence which agreed well with a Monte Carlo simulation. The resolution was found to be 11 μm for normal incidence with a pitch of 50 μm, and 29 μm for incident angle of 75 degrees with a pitch of 250μm

Detector and Front-end electronics for ALICE and STAR silicon strip layers

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

1998-01-01

Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

CERN Document Server

Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

2003-01-01

A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

CERN Document Server

INSPIRE-00407830; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid M.; Jones, T; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

2016-05-24

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigatio...

Light output optimization for the Cherenkov strips of the Barrel detector of FOPI

Energy Technology Data Exchange (ETDEWEB)

Petrovici, M; Gobbi, A; Hildenbrand, K D [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Kirejczyk, M; Sikora, B [Warsaw Univ. (Poland); Chelepov, V; Dulin, M; Frolov, S; Judentsov, A; Krylov, V; Nikitin, A; Smolyankin, V; Zhilin, A [Institute for Theoretical and Expermental Physics - ITEP, B. Chermushkinskaya ulitsa 25, RU-117 259 Moskva, (Russian Federation); Mgebrishvili, G; Vasiliev, M [I.V. Kurchatov Institute of Atomic Energy, Ulitsa Kurchatova 46, RU-123 182 Moskva, (Russian Federation)

1994-12-31

Available as short communication only. A systematic study on how to increase the number of the photoelectrons (PE) in the phototubes at the end of the bent light guides has been undertaken prior to the final assembly of the Cherenkov strips of the Barrel detector for the 4{pi} facility FOPI at GSI-Darmstadt. This was motivated by the observation that with the mass-produced strips only 0.8 PE were found for cosmic rays incident at the center of the 240 cm long strips, a value too low to ensure a decent detection of even {beta}=1 particles. The method used was based on a careful calibration of the amplitude spectra by means of measuring single-electron peaks in the attached tubes. As the consequence of these studies the wave-length shifter (amino G salt) concentration in the distilled water of strips was optimized and a cell of 1000 mm with a mirror on one side has been used. These changes brought a improvement factor of 9 in the number of PE at 85 cm distance from the light guide. This results led to the decision of changing the former design of the Cherenkov layer. In addition during production of these final modules it has been observed that variances between different strips in terms of the number of PE could be minimized by an outer polishing of the plexiglas cells. Finally, during mounting of the detectors the used phototubes were selected according to their performance in peak to valley ratio of the single electron peaks spectrum. (Author) 3 Figs., 2 Refs.

The Control System for the CMS Strip Tracking Detector

CERN Document Server

Fahrer, Manuel; Chen, Jie; Dierlamm, Alexander; Frey, Martin; Masetti, Lorenzo; Militaru, Otilia; Shah, Yousaf; Stringer, Robert; Tsirou, Andromachi

2008-01-01

The Tracker of the CMS silicon strip tracking detector covers a surface of 206 m2. 9648128 channels are available on 75376 APV front-end chips on 15232 modules, built of 24328 silicon sensors. The power supply of the detector modules is split up in 1944 power supplies with two low voltage for front end power and two high voltage channels each for the bias voltage of the silicon sensors. In addition 356 low voltage channels are needed to power the control chain. The tracker will run at -20°C at low relative humidity for at least 10 years. The Tracker Control System handles all interdependencies of control, low and high voltages, as well as fast ramp downs in case of higher than allowed temperatures or currents in the detector and experimental cavern problems. This is ensured by evaluating $10^{4}$ power supply parameters, $10^{3}$ information from Tracker Safety System and $10^{5}$ information from the tracker front end.

Monte Carlo simulation of the X-ray response of a germanium microstrip detector with energy and position resolution

CERN Document Server

Rossi, G; Fajardo, P; Morse, J

1999-01-01

We present Monte Carlo computer simulations of the X-ray response of a micro-strip germanium detector over the energy range 30-100 keV. The detector consists of a linear array of lithographically defined 150 mu m wide strips on a high purity monolithic germanium crystal of 6 mm thickness. The simulation code is divided into two parts. We first consider a 10 mu m wide X-ray beam striking the detector surface at normal incidence and compute the interaction processes possible for each photon. Photon scattering and absorption inside the detector crystal are simulated using the EGS4 code with the LSCAT extension for low energies. A history of events is created of the deposited energies which is read by the second part of the code which computes the energy histogram for each detector strip. Appropriate algorithms are introduced to account for lateral charge spreading occurring during charge carrier drift to the detector surface, and Fano and preamplifier electronic noise contributions. Computed spectra for differen...

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

International Nuclear Information System (INIS)

Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

2009-01-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

Science.gov (United States)

Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

2009-08-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

Calibration and performance of the MARK II drift chamber vertex detector

International Nuclear Information System (INIS)

Durrett, D.; Ford, W.T.; Hinshaw, D.A.; Rankin, P.; Smith, J.G.; Weber, P.

1990-05-01

We have calibrated and studied the performance of the MARK II drift chamber vertex detector with cosmic ray tracks collected with the chamber inside the MARK II detector at the SLC. The chamber achieves 30 μm impact parameter resolution and 500 μm track-pair resolution using CO 2 /C 2 H 6 H 6 (92/8) at 2 atmospheres pressure. The chamber has successfully recorded Z 0 decays at the SLC, and resolved tracks in dense hadronic jets with good efficiency and high accuracy. 5 refs., 13 figs

Mathematical framework for fast and rigorous track fit for the ZEUS detector

Energy Technology Data Exchange (ETDEWEB)

Spiridonov, Alexander

2008-12-15

In this note we present a mathematical framework for a rigorous approach to a common track fit for trackers located in the inner region of the ZEUS detector. The approach makes use of the Kalman filter and offers a rigorous treatment of magnetic field inhomogeneity, multiple scattering and energy loss. We describe mathematical details of the implementation of the Kalman filter technique with a reduced amount of computations for a cylindrical drift chamber, barrel and forward silicon strip detectors and a forward straw drift chamber. Options with homogeneous and inhomogeneous field are discussed. The fitting of tracks in one ZEUS event takes about of 20ms on standard PC. (orig.)

Vertex detectors

International Nuclear Information System (INIS)

Lueth, V.

1992-07-01

The purpose of a vertex detector is to measure position and angles of charged particle tracks to sufficient precision so as to be able to separate tracks originating from decay vertices from those produced at the interaction vertex. Such measurements are interesting because they permit the detection of weakly decaying particles with lifetimes down to 10 -13 s, among them the τ lepton and charm and beauty hadrons. These two lectures are intended to introduce the reader to the different techniques for the detection of secondary vertices that have been developed over the past decades. The first lecture includes a brief introduction to the methods used to detect secondary vertices and to estimate particle lifetimes. It describes the traditional technologies, based on photographic recording in emulsions and on film of bubble chambers, and introduces fast electronic registration of signals derived from scintillating fibers, drift chambers and gaseous micro-strip chambers. The second lecture is devoted to solid state detectors. It begins with a brief introduction into semiconductor devices, and then describes the application of large arrays of strip and pixel diodes for charged particle tracking. These lectures can only serve as an introduction the topic of vertex detectors. Time and space do not allow for an in-depth coverage of many of the interesting aspects of vertex detector design and operation

A liquid-nitrogen monitor for lithium-drifted germanium detectors

International Nuclear Information System (INIS)

Andeweg, A.H.

1977-11-01

An instrument has been developed that makes use of a load cell to monitor the liquid nitrogen in the Dewar flask of a lithium-drifted germaniun detector. The contents are recorded on a chart recorder, and an alarm is sounded when the previously set content has been reached. A signal switches off the high-voltage power supply 30 minutes after the alarm is triggered. The calibration of the load-cell monitor is described in an appendix [af

Noise analysis due to strip resistance in the ATLAS SCT silicon strip module

International Nuclear Information System (INIS)

Kipnis, I.

1996-08-01

The module is made out of four 6 cm x 6 cm single sided Si microstrip detectors. Two detectors are butt glued to form a 12 cm long mechanical unit and strips of the two detectors are electrically connected to form 12 cm long strips. The butt gluing is followed by a back to back attachment. The module in this note is the Rφ module where the electronics is oriented parallel to the strip direction and bonded directly to the strips. This module concept provides the maximum signal-to-noise ratio, particularly when the front-end electronics is placed near the middle rather than at the end. From the noise analysis, it is concluded that the worst-case ΔENC (far-end injection) between end- and center-tapped modules will be 120 to 210 el. rms (9 to 15%) for a non-irradiated detector and 75 to 130 el. rms (5 to 9%) for an irradiated detector, for a metal strip resistance of 10 to 20 Ω/cm

Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

International Nuclear Information System (INIS)

Hawkins, Samantha A.; Villa-Aleman, Eliel; Duff, Martine C.; Hunter, Doug B.; Burger, Arnold; Groza, Michael; Buliga, Vladimir; Black, David R.

2008-01-01

CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal's performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.

Silicon strip detectors for the ATLAS upgrade

CERN Document Server

Gonzalez Sevilla, S; The ATLAS collaboration

2011-01-01

The Large Hadron Collider at CERN will extend its current physics program by increasing the peak luminosity by one order of magnitude. For ATLAS, one of the two general-purpose experiments of the LHC, an upgrade scenario will imply the complete replacement of its internal tracker due to the harsh conditions in terms of particle rates and radiation doses. New radiation-hard prototype n-in-p silicon sensors have been produced for the short-strip region of the future ATLAS tracker. The sensors have been irradiated up to the fluences expected in the high-luminous LHC collider. This paper summarizes recent results on the performance of the irradiated n-in-p detectors.

Initial beam test results from a silicon-strip detector with VLSI readout

International Nuclear Information System (INIS)

Adolphsen, C.; Litke, A.; Schwarz, A.

1986-01-01

Silicon detectors with 256 strips, having a pitch of 25 μm, and connected to two 128 channel NMOS VLSI chips each (Microplex), have been tested in relativistic charged particle beams at CERN and at the Stanford Linear Accelerator Center. The readout chips have an input channel pitch of 47.5 μm and a single multiplexed output which provides voltages proportional to the integrated charge from each strip. The most probable signal height from minimum ionizing tracks was 15 times the rms noise in any single channel. Two-track traversals with a separation of 100 μm were cleanly resolved

XA readout chip characteristics and CdZnTe spectral measurements

International Nuclear Information System (INIS)

Barbier, L.M.; Birsa, F.; Odom, J.

1999-01-01

The authors report on the performance of a CdZnTe (CZT) array readout by an XA (X-ray imaging chip produced at the AMS foundry) application specific readout chip (ASIC). The array was designed and fabricated at NASA/Goddard Space Flight Center (GSFC) as a prototype for the Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument. The XA ASIC was obtained from Integrated Detector and Electronics (IDE), in Norway. Performance characteristics and spectral data for 241 Am are presented both at room temperature and at -20 C. The measured noise (σ) was 2.5 keV at 60 keV at room temperature. This paper represents a progress report on work with the XA ASIC and CZT detectors. Work is continuing and in particular, larger arrays are planned for future NASA missions

SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion

Energy Technology Data Exchange (ETDEWEB)

Trimpl, M.; Deptuch, G.; Yarema, R.; /Fermilab

2010-11-01

This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm{sup 2} large detector array with 20 {micro}m and 40 {micro}m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.

The influence of anisotropic electron drift velocity on the signal shapes of closed-end HPGe detectors

CERN Document Server

Mihailescu, L; Lieder, R M; Brands, H; Jaeger, H

2000-01-01

This study is concerned with the anisotropy of the electron drift velocity in germanium crystals at high electric fields and low temperature, and its influence on the charge collection process in n-type, high-purity germanium (HPGe) detectors of closed-end, coaxial geometry. The electron trajectories inside HPGe detectors are simulated using a phenomenological model to calculate the dependence of the drift velocity on the angle between the electric field and the crystal orientation. The resulting induced currents and pulse shapes for a given detector geometry and preamplifier bandwidth are compared to experiment. Experimentally, the dependence of the pulse shapes on the conductivity anisotropy in closed-end HPGe detectors was observed. The experimental data on pulse shapes were obtained by sampling preamplifier signals of an encapsulated, hexaconical EUROBALL detector, which was irradiated by collimated sup 2 sup 2 Na and sup 2 sup 4 sup 1 Am sources. The crystal orientation was measured by neutron reflection...

SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion

International Nuclear Information System (INIS)

Trimpl, M.; Deptuch, G.; Yarema, R.

2010-01-01

This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm 2 large detector array with 20 (micro)m and 40 (micro)m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.

Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors

Directory of Open Access Journals (Sweden)

Torresi D.

2016-01-01

Full Text Available In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different energies directly sent on the detector and a second experiment by mean of a proton microbeam. Results show that the effective width of the inter-strip region and the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are qualitatively reproduced by a simplified model based on the Shockley-Ramo-Gunn framework.

Evaluation of the data of the HERA-B vertex detector with regards to the physical properties of the applied silicon strip counters

International Nuclear Information System (INIS)

Wagner, W.

1999-01-01

The HERA-B experiment at the DESY laboratory in Hamburg is dedicated to measuring CP-violation in the decays of neutral B-mesons. The primary purpose of the experiment in the measurement of the CP-asymmetry in the decay channel B 0 → J/ψK S 0 . In order to identify the B-mesons and to determine the time-dependent asymmetry, the decay length anti Δ anti l of the B-mesons must be measured to an accuracy of σ Δl ≤ 500 μm. To achieve this aim, HERA-B has a vertex detector which is based on double-sided silicon strip detectors mounted in a Roman pot system. One important specification of the vertex detector is to allow independent tracking with an efficiency above 95%. Therefore, it is required to select hits on the strip detectors with an efficiency above 99% and optimize the suppression of noise. This thesis describes a detailed investigation of the behaviour of the silicon strip detectors used in the vertex detector. The first part presents measurements performed in the laboratory using a tunable infrared dye laser to simulate the passage of charged particles through the detector. This includes measurements of the charge division between adjacent readout strips and mapping of the detector depletion. The results of the measurements agree excellently with the predictions from a detailed model calculation carried out in this thesis. The second part of the thesis the analysis of data recorded with the HERA-B vertex detector during the commissioning run of spring 1999. The analysis focusses on the investigation of cluster shapes and cluster sizes. In particular, the dependence of these distributions from the selection cuts is analyzed. Additionally, the differences between the two detector designs used, p-spray and p-stop detectors with intermediate strip or without respectively, are worked out. The measured distributions agree very well with the predictions from a model calculation taking all relevant detector parameters into account. The results of the data

Mitigating Backgrounds with a Novel Thin-Film Cathode in the DRIFT-IId Dark Matter Detector

Science.gov (United States)

Miller, Eric H.

The nature of dark matter, which comprises 85% of the matter density in the universe, is a major outstanding question in physics today. The standard hypothesis is that the dark matter is a new weakly interacting massive particle, which is present throughout the galaxy. These particles could interact within detectors on Earth, producing low-energy nuclear recoils. Two distinctive signatures arise from the solar motion through the galaxy. The DRIFT experiment aims to measure one of these, the directional signature that is based on the sidereal modulation of the nuclear recoil directions. Although DRIFT has demonstrated its capability for detecting this signature, it has been plagued by a large number of backgrounds that have limited its reach. The focus of this thesis is on characterizing these backgrounds and describing techniques that have essentially eliminated them. The background events in the DRIFT-IId detector are predominantly caused by alpha decays on the central cathode in which the alpha particles completely or partially absorbed by the cathode material. This thesis describes the installation a 0.9 mum thick aluminized-mylar cathode as a way to reduce the probability of producing these backgrounds. We study three generations of cathode (wire, thin-film, and radiologically clean thin-film) with a focus on identifying and quantifying the sources of alpha decay backgrounds, as well as their contributions to the background rate in the detector. This in-situ study is based on alpha range spectroscopy and the determination of the absolute alpha detection efficiency. The results for the final radiologically clean version of the cathode give a contamination of 3.3 +/- 0.1 ppt 234U and 73 +/- 2 ppb 238U, and an efficiency for rejecting an RPR from an alpha decay that is a factor 70 +/- 20 higher than for the original wire cathode. Along with other background reduction measures, the thin-film cathode has reduced the observed background rate from 130/day to 1.7/day

Expert System for the LHC CMS Cathode Strip Chambers (CSC) detector

Energy Technology Data Exchange (ETDEWEB)

Rapsevicius, Valdas, E-mail: valdas.rapsevicius@cern.ch [Fermi National Accelerator Laboratory, Batavia, IL (United States); Vilnius University, Didlaukio g. 47-325, LT-08303 Vilnius (Lithuania); Juska, Evaldas, E-mail: evaldas.juska@cern.ch [Fermi National Accelerator Laboratory, Batavia, IL (United States)

2014-02-21

Modern High Energy Physics experiments are of high demand for a generic and consolidated solution to integrate and process high frequency data streams by applying experts' knowledge and inventory configurations. In this paper we present the Expert System application that was built for the Compact Muon Solenoid (CMS) Cathode Strip Chambers (CSC) detector at the Large Hadron Collider (LHC) aiming to support the detector operations and to provide integrated monitoring. The main building blocks are the integration platform, rule-based complex event processing engine, ontology-based knowledge base, persistent storage and user interfaces for results and control.

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

A test-bench for measurement of electrical static parameters of strip silicon detectors

International Nuclear Information System (INIS)

Golutvin, I.A.; Dmitriev, A.Yu.; Elsha, V.V.

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control. (author)

A Test-Bench for Measurement of Electrical Static Parameters of Strip Silicon Detectors

CERN Document Server

Golutvin, I A; Danilevich, V G; Dmitriev, A Yu; Elsha, V V; Zamiatin, Y I; Zubarev, E V; Ziaziulia, F E; Kozus, V I; Lomako, V M; Stepankov, D V; Khomich, A P; Shumeiko, N M; Cheremuhin, A E

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for measurement data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control.

Prototype Strip Barrel Modules for the ATLAS ITk Strip Detector

CERN Document Server

Sawyer, Craig; The ATLAS collaboration

2017-01-01

The module design for the Phase II Upgrade of the new ATLAS Inner Tracker (ITk) detector at the LHC employs integrated low mass assembly using single-sided flexible circuits with readout ASICs and a powering circuit incorporating control and monitoring of HV, LV and temperature on the module. Both readout and powering circuits are glued directly onto the silicon sensor surface resulting in a fully integrated, extremely low radiation length module which simultaneously reduces the material requirements of the local support structure by allowing a reduced width stave structure to be employed. Such a module concept has now been fully demonstrated using so-called ABC130 and HCC130 ASICs fabricated in 130nm CMOS technology to readout ATLAS12 n+-in-p silicon strip sensors. Low voltage powering for these demonstrator modules has been realised by utilising a DCDC powerboard based around the CERN FEAST ASIC. This powerboard incorporates an HV multiplexing switch based on a Panasonic GaN transistor. Control and monitori...

Offline calibration procedure of the CMS Drift Tube detectors

International Nuclear Information System (INIS)

Abbiendi, G; Battilana, C; Cavallo, F R; Giunta, M; Guiducci, L; Amapane, N; Bolognesi, S; Cerminara, G; Bellan, R; Biallass, P; Frangenheim, J; Biasotto, M; Tazon, A Calderon; Cepeda, M; Cruz, B De La; Pardos, C Diez; Bedoya, C Fernandez; Iglesias, M C Fouz; Menendez, J Fernandez; Gresele, A

2009-01-01

The barrel region of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider is instrumented with Drift Tube (DT) detectors. This paper describes in full details the calibration of the DT hit reconstruction algorithm. After inter-channel synchronization has been verified through the appropriate hardware procedure, the time pedestals are extracted directly from the distribution of the recorded times. Further corrections for time-of-flight and time of signal propagation are applied as soon as the three-dimensional hit position within the DT chamber is known. The different effects of the time pedestal miscalibration on the two main hit reconstruction algorithms are shown. The drift velocity calibration algorithm is based on the meantimer technique. Different meantimer relations for different track angles and patterns of hit cells are used. This algorithm can also be used to determine the uncertainty on the reconstructed hit position.

A simple pulse shape discrimination technique applied to a silicon strip detector

International Nuclear Information System (INIS)

Figuera, P.; Lu, J.; Amorini, F.; Cardella, G.; DiPietro, A.; Papa, M.; Musumarra, A.; Pappalardo, G.; Rizzo, F.; Tudisco, S.

2001-01-01

Full text: Since the early sixties, it has been known that the shape of signals from solid state detectors can be used for particle identification. Recently, this idea has been revised in a group of papers where it has been shown that the shape of current signals from solid state detectors is mainly governed by the combination of plasma erosion time and charge carrier collection time effects. We will present the results of a systematic study on a pulse shape identification method which, contrary to the techniques proposed, is based on the use of the same electronic chain normally used in the conventional time of flight technique. The method is based on the use of charge preamplifiers, low polarization voltages (i.e. just above full depletion ones), rear side injection of the incident particles, and on a proper setting of the constant fraction discriminators which enhances the dependence of the timing output on the rise time of the input signals (which depends on the charge and energy of the incident ions). The method has been applied to an annular Si strip detector with an inner radius of about 16 mm and an outer radius of about 88 mm. The detector, manufactured by Eurisys Measures (Type Ips.73.74.300.N9), is 300 microns thick and consists of 8 independent sectors each divided into 9 circular strips. On beam tests have been performed at the cyclotron of the Laboratori Nazionali del Sud in Catania using a 25.7 MeV/nucleon 58 Ni beam impinging on a 51 V and 45 Sc composite target. Excellent charge identification from H up to the Ni projectile has been observed and typical charge identification thresholds are: ∼ 1.7 MeV/nucleon for Z ≅ 6, ∼ 3.0 MeV/nucleon for Z ≅ 11, and ∼ 5.5 MeV/nucleon for Z ≅ 20. Isotope identification up to A ≅ 13 has been observed with an energy threshold of about 6 MeV/nucleon. The identification quality has been studied as a function of the constant fraction settings. The method has been applied to all the 72 independent strips

Silicon Drift Detector response function for PIXE spectra fitting

Science.gov (United States)

Calzolai, G.; Tapinassi, S.; Chiari, M.; Giannoni, M.; Nava, S.; Pazzi, G.; Lucarelli, F.

2018-02-01

The correct determination of the X-ray peak areas in PIXE spectra by fitting with a computer program depends crucially on accurate parameterization of the detector peak response function. In the Guelph PIXE software package, GUPIXWin, one of the most used PIXE spectra analysis code, the response of a semiconductor detector to monochromatic X-ray radiation is described by a linear combination of several analytical functions: a Gaussian profile for the X-ray line itself, and additional tail contributions (exponential tails and step functions) on the low-energy side of the X-ray line to describe incomplete charge collection effects. The literature on the spectral response of silicon X-ray detectors for PIXE applications is rather scarce, in particular data for Silicon Drift Detectors (SDD) and for a large range of X-ray energies are missing. Using a set of analytical functions, the SDD response functions were satisfactorily reproduced for the X-ray energy range 1-15 keV. The behaviour of the parameters involved in the SDD tailing functions with X-ray energy is described by simple polynomial functions, which permit an easy implementation in PIXE spectra fitting codes.

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

International Nuclear Information System (INIS)

Guang-Guo, Wu; Hong-Ri, Li; Kun, Liang; Ru, Yang; De-Jun, Han; Xue-Lei, Cao; Huan-Yu, Wang; Jun-Ming, An; Xiong-Wei, Hu

2009-01-01

Anode Boating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm 2 fabricated by a double-side parallel technology. It is demonstrated that the anode Boating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode Boating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (−50 V) of the SDD. Theoretical analysis and experimental results show that the anode Boating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p + inner ring and the n + anode. A fast checking method before detector encapsulation is proposed by employing the anode Boating voltage along with checking the leakage current, potential distribution and drift properties

Radiography imaging by 64 and 128 micro-strips crystalline detectors at different X-ray energies

International Nuclear Information System (INIS)

Leyva, A.; Cabal, A.; Montano, L. M.; Fontaine, M.; Mora, R. de la; Padilla, F.

2006-01-01

This paper summarizes some results obtained in the evaluation of the performance of position sensitive detectors in track reconstruction in particle physics experiments. Crystalline silicon micro-strips detectors with 64 and 128 channels and 100 μm pitch were used to obtain radiographic digital images of different objects. The more relevant figures for spectrometry applications were measured and reported. Two-dimensional images were obtained by scanning the object with a collimated beam using different source-target-detector positioning and three sources of X-rays (8.04, 18.55 and 22.16 keV). The counts acquired by each strip correspond to a particular collimator position during the scan, thus serving to reconstruct the image of the exposed to X-ray object and to reveal its internal structure. The use of some techniques for image processing allow the further improvement of the radiography quality. The preliminary results obtained using in-house made and accreditation mammography phantoms allow to infer that such detectors can be successfully introduced in the digital mammography practice. (Author)

3D design and electric simulation of a silicon drift detector using a spiral biasing adapter

Energy Technology Data Exchange (ETDEWEB)

Li, Yu-yun; Xiong, Bo [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector, Development and Fabrication, Xiangtan University, Xiangtan 411105 (China); Li, Zheng, E-mail: zhengli58@gmail.com [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector, Development and Fabrication, Xiangtan University, Xiangtan 411105 (China)

2016-09-21

The detector system of combining a spiral biasing adapter (SBA) with a silicon drift detector (SBA-SDD) is largely different from the traditional silicon drift detector (SDD), including the spiral SDD. It has a spiral biasing adapter of the same design as a traditional spiral SDD and an SDD with concentric rings having the same radius. Compared with the traditional spiral SDD, the SBA-SDD separates the spiral's functions of biasing adapter and the p–n junction definition. In this paper, the SBA-SDD is simulated using a Sentaurus TCAD tool, which is a full 3D device simulation tool. The simulated electric characteristics include electric potential, electric field, electron concentration, and single event effect. Because of the special design of the SBA-SDD, the SBA can generate an optimum drift electric field in the SDD, comparable with the conventional spiral SDD, while the SDD can be designed with concentric rings to reduce surface area. Also the current and heat generated in the SBA are separated from the SDD. To study the single event response, we simulated the induced current caused by incident heavy ions (20 and 50 μm penetration length) with different linear energy transfer (LET). The SBA-SDD can be used just like a conventional SDD, such as X-ray detector for energy spectroscopy and imaging, etc. - Highlights: • The separation of the spiral biasing adapter and SDD is a new concept. • The distribution of the electric potential is symmetrical around the axis through the anode. • The region with higher electron concentrations defines the drift channel.

Development of a simplified simulation model for performance characterization of a pixellated CdZnTe multimodality imaging system

Energy Technology Data Exchange (ETDEWEB)

Guerra, P; Santos, A [Departamento de IngenierIa Electronica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Darambara, D G [Joint Department of Physics, Royal Marsden NHS Foundation Trust and The Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)], E-mail: pguerra@die.um.es

2008-02-21

Current requirements of molecular imaging lead to the complete integration of complementary modalities in a single hybrid imaging system to correlate function and structure. Among the various existing detector technologies, which can be implemented to integrate nuclear modalities (PET and/or single-photon emission computed tomography with x-rays (CT) and most probably with MR, pixellated wide bandgap room temperature semiconductor detectors, such as CdZnTe and/or CdTe, are promising candidates. This paper deals with the development of a simplified simulation model for pixellated semiconductor radiation detectors, as a first step towards the performance characterization of a multimodality imaging system based on CdZnTe. In particular, this work presents a simple computational model, based on a 1D approximate solution of the Schockley-Ramo theorem, and its integration into the Geant4 application for tomographic emission (GATE) platform in order to perform accurately and, therefore, improve the simulations of pixellated detectors in different configurations with a simultaneous cathode and anode pixel readout. The model presented here is successfully validated against an existing detailed finite element simulator, the multi-geometry simulation code, with respect to the charge induced at the anode, taking into consideration interpixel charge sharing and crosstalk, and to the detector charge induction efficiency. As a final point, the model provides estimated energy spectra and time resolution for {sup 57}Co and {sup 18}F sources obtained with the GATE code after the incorporation of the proposed model.

EMC Diagnosis and Corrective Actions for Silicon Strip Tracker Detectors

Energy Technology Data Exchange (ETDEWEB)

Arteche, F.; /CERN /Imperial Coll., London; Rivetta, C.; /SLAC

2006-06-06

The tracker sub-system is one of the five sub-detectors of the Compact Muon Solenoid (CMS) experiment under construction at CERN for the Large Hadron Collider (LHC) accelerator. The tracker subdetector is designed to reconstruct tracks of charged sub-atomic particles generated after collisions. The tracker system processes analogue signals from 10 million channels distributed across 14000 silicon micro-strip detectors. It is designed to process signals of a few nA and digitize them at 40 MHz. The overall sub-detector is embedded in a high particle radiation environment and a magnetic field of 4 Tesla. The evaluation of the electromagnetic immunity of the system is very important to optimize the performance of the tracker sub-detector and the whole CMS experiment. This paper presents the EMC diagnosis of the CMS silicon tracker sub-detector. Immunity tests were performed using the final prototype of the Silicon Tracker End-Caps (TEC) system to estimate the sensitivity of the system to conducted noise, evaluate the weakest areas of the system and take corrective actions before the integration of the overall detector. This paper shows the results of one of those tests, that is the measurement and analysis of the immunity to CM external conducted noise perturbations.

Drift tubes for the SAMUS muon spectrometer of the DO detector

International Nuclear Information System (INIS)

Antipov, Yu.M.; Bezzubov, V.A.; Denisov, D.S.; Evdokimov, V.N.; Pishal'nikov, Yu.M.; Stoyanova, D.A.

1989-01-01

The construction and manufacturing procedure of 6000 drift tubes for the SAMUS muon spectrometer of the DO detector are described in detail. The diameter of the stainless steel tubes is 30mm, their length varies within the range from 0.2 to 3.8 m. A testing procedure of the main parameters of the tubes is proposed and the results of testing all the tubes after manufacturing are given. With the pure methane filling the maximum drift time for electrons is 0.16 μs, the plateau of effective detection of minimum ionizing particles is equal to 1.0 kV and the coordinate resolution is 0.3 mm. 12 refs.; 9 figs.; 4 tabs

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

Energy Technology Data Exchange (ETDEWEB)

Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2013-12-21

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

International Nuclear Information System (INIS)

Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

2013-01-01

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

Works of art investigation with silicon drift detectors

CERN Document Server

Leutenegger, P; Fiorini, C; Strüder, L; Kemmer, J; Lechner, P; Sciuti, S; Cesareo, R

2000-01-01

The X-ray fluorescence (XRF) spectroscopy analysis is a non-destructive technique widely used in archeometry to investigate the chemical composition of pigments, metal alloys and stones for restoration and historical investigation. The classical detection systems for archeometrical investigations utilize cryogenic detectors, like Si(Li) and HPGe, characterized by a satisfactory energy resolution (of the order of 140 eV FWHM at 6 keV). However, the requirements of liquid N sub 2 drastically limit the portability of such systems, limiting the possibility of making measurements 'on the field'. Recently new silicon PIN diodes Peltier cooled were introduced, allowing the construction of portable instrumentation. However, their energy resolution (of the order of 250 eV FWHM at 6 keV) results in some cases unsatisfactory (for instance in the identification of light elements). Both the requirements of portability and good energy resolution are fulfilled by the silicon drift detector (SDD). The SDD, cooled by a Peltie...

NaI(Tl) scintillator detectors stripping procedure for air kerma measurements of diagnostic X-ray beams

Science.gov (United States)

Oliveira, L. S. R.; Conti, C. C.; Amorim, A. S.; Balthar, M. C. V.

2013-03-01

Air kerma is an essential quantity for the calibration of national standards used in diagnostic radiology and the measurement of operating parameters used in radiation protection. Its measurement within the appropriate limits of accuracy, uncertainty and reproducibility is important for the characterization and control of the radiation field for the dosimetry of the patients submitted to diagnostic radiology and, also, for the assessment of the system which produces radiological images. Only the incident beam must be considered for the calculation of the air kerma. Therefore, for energy spectrum, counts apart the total energy deposition in the detector must be subtracted. It is necessary to establish a procedure to sort out the different contributions to the original spectrum and remove the counts representing scattered photons in the detector's materials, partial energy deposition due to the interactions in the detector active volume and, also, the escape peaks contributions. The main goal of this work is to present spectrum stripping procedure, using the MCNP Monte Carlo computer code, for NaI(Tl) scintillation detectors to calculate the air kerma due to an X-ray beam usually used in medical radiology. The comparison between the spectrum before stripping procedure against the reference value showed a discrepancy of more than 63%, while the comparison with the same spectrum after the stripping procedure showed a discrepancy of less than 0.2%.

Theoretical evaluation of the Doppler broadening contribution to the angular resolution in CdZnTe Compton scattering detector

International Nuclear Information System (INIS)

Diaz Garcia, A.; Cabal Rodriguez, A.E.; Rubio Rodriguez, J. A.; Salicio Diez, J.; Perez Morales, J.M.; Vela Morales, O.; Willmott Zappacosta, C.; Van Espen, P.

2011-01-01

Electronically collimated Compton Cameras have been tested in Single Photon Emission Tomography (SPECT) systems instead of mechanically collimated gamma detectors in order to improve their limited sensitivity. One of the main factors that contribute to the worsening of the angular resolution and thus to the deterioration of the system spatial resolution is Doppler broadening. Double differential Klein-Nishina equation is used to consider the random movement of electron inside the crystal. It is important to perform this analysis for each particular material because is difficult to infer one simple Doppler broadening dependency of the atomic number Z. In high Z materials the internal electrons are strongly linked to the nucleus and therefore there can be found high momentums, but they represent just a small portion of the electrons that suffers Compton scattering. This work estimates the influence of the Doppler broadening in CdZnTe semiconductor for different incoming photon energies. For this means there are analyzed main Compton broadening processes in semiconductor Cd 0,8 Zn 0,2 Te with density ρ=5,85g/cm 3 . (Author)

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

International Nuclear Information System (INIS)

Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

2014-01-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

Silicon drift detectors in alice experiment at lhc, performance tests and simulations

International Nuclear Information System (INIS)

ALICE collaboration

2001-01-01

A brief introduction to the silicon drift detector (SDD) in ALICE experiment at LHC CERN. Excellent agreement are found between the results from the simulation code (Ali Root) and the results of the test beam data for SDD s. A study of SDD performance and double track separation capability are shown

A doublet of 3" cylindrical silicon drift detectors in the CERES/NA45 experiment

CERN Document Server

Faschingbauer, U; Baur, R; Ceretto, F; Drees, A; Fraenkel, Zeev; Fuchs, C; Gatti, E; Glässel, P; Hemberger, M; Pérez de los Heros, C; Hess, F; Holl, P; Irmscher, D; Jacob, C; Kemmer, J; Minaev, Yu I; Panebratsev, Yu A; Pfeiffer, A; Ravinovich, I; Razin, S V; Rehak, P; Sampietro, M; Schükraft, Jürgen; Shimansky, S S; Socol, E; Specht, H J; Tel-Zur, G; Tserruya, Itzhak; Ullrich, T S; Voigt, C A; Wurm, J P; Yurevich, V I

1995-01-01

We report on the performance of a doublet of 3" cylindrical silicon drift detectors installed as an upgrade of the CERES/NA45 electron pair spectrometer for the Pb-beam at the CERN SPS. The silicon detectors provide external particle tracking and background rejection of conversions and close Dalitz pairs. Results on vertex reconstruction and rejection from Pb test-run in 1994 are presented.

Development of Muon Drift-Tube Detectors for High-Luminosity Upgrades of the Large Hadron Collider

CERN Document Server

Bittner, B; Kortner, O.; Kroha, H.; Legger, F.; Richter, R.; Biebel, O.; Engl, A.; Hertenberger, R.; Rauscher, F.

2016-01-01

The muon detectors of the experiments at the Large Hadron Collider (LHC) have to cope with unprecedentedly high neutron and gamma ray background rates. In the forward regions of the muon spectrometer of the ATLAS detector, for instance, counting rates of 1.7 kHz/square cm are reached at the LHC design luminosity. For high-luminosity upgrades of the LHC, up to 10 times higher background rates are expected which require replacement of the muon chambers in the critical detector regions. Tests at the CERN Gamma Irradiation Facility showed that drift-tube detectors with 15 mm diameter aluminum tubes operated with Ar:CO2 (93:7) gas at 3 bar and a maximum drift time of about 200 ns provide e?cient and high-resolution muon tracking up to the highest expected rates. For 15 mm tube diameter, space charge e?ects deteriorating the spatial resolution at high rates are strongly suppressed. The sense wires have to be positioned in the chamber with an accuracy of better than 50 ?micons in order to achieve the desired spatial...

A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Sevilla, S., E-mail: Sergio.Gonzalez.Sevilla@cern.ch [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Barbier, G. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Anghinolfi, F. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Cadoux, F.; Clark, A. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Dabrowski, W.; Dwuznik, M. [AGH University of Sceince and Technology, Faculty of Physics and Applied Computer Science, Krakow (Poland); Ferrere, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Garcia, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Ikegami, Y. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hara, K. [University of Tsukuba, School of Pure and Applied Sciences, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Jakobs, K. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Kaplon, J. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Koriki, T. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Lacasta, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); La Marra, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Marti i Garcia, S. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Parzefall, U. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Pohl, M. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Terada, S. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

2011-04-21

The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10{sup 34} cm{sup -2} s{sup -1}. It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown.

A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

CERN Document Server

Gonzalez-Sevilla, S; Parzefall, U; Clark, A; Ikegami, Y; Hara, K; Garcia, C; Jakobs, K; Dwuznik, M; Terada, S; Barbier, G; Koriki, T; Lacasta, C; Unno, Y; Anghinolfi, F; Cadoux, F; Garcia, S M I; Ferrere, D; La Marra, D; Pohl, M; Dabrowski, W; Kaplon, J

2011-01-01

The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10(34)cm(-2)s(-1). It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown. (C) 2010 Elsevier B.V. All rights reserved.

Optical and electrical study of CdZnTe surfaces passivated by KOH and NH{sub 4}F solutions

Energy Technology Data Exchange (ETDEWEB)

Zázvorka, J., E-mail: zazvorka.jakub@gmail.com [Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Franc, J.; Statelov, M.; Pekárek, J.; Veis, M.; Moravec, P. [Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, CZ, 18000 Prague (Czech Republic)

2016-12-15

Highlights: • Surface of CdZnTe samples was passivated after chemical etching. • KOH and NH{sub 4}F solutions were used as passivation agents. • Growth of surface oxide after passivation is observed. • Surface oxide thickness was evaluated over time after chemical treatment. • Oxidation of the sample correlates with decreased leakage current. - Abstract: Performance of CdZnTe-based detectors is highly related to surface preparation. Mechanical polishing, chemical etching and passivation are routinely employed for this purpose. However, the relation between these processes and the detector performance in terms of underlying physical phenomena has not been fully explained. The dynamics and properties of CdZnTe surface oxide layers, created by passivation with KOH and NH4F/H2O2 solutions, were studied by optical ellipsometry and X-ray photoelectron spectroscopy (XPS). Thicknesses and growth rates of the surface oxide layers differed for each of the passivation methods. Leakage currents which influence the final spectral resolution of the detector were measured simultaneously with ellipsometry. Results of both optical and electrical investigation showed the same trends in the time evolution and correlated to each other. NH4F/H2O2 passivation showed to be a method which produces the most desirable properties of the surface oxide layer.

Transparent silicon strip sensors for the optical alignment of particle detector systems

International Nuclear Information System (INIS)

Blum, W.; Kroha, H.; Widmann, P.

1995-05-01

Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland); Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-03-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

International Nuclear Information System (INIS)

Laakso, M.; Helsinki Univ.; Singh, P.; Engels, E. Jr.; Shepard, P.

1992-02-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a 137 Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described. 13 refs

Fast timing readout for silicon strip detectors

International Nuclear Information System (INIS)

Jhingan, A.; Saneesh, N.; Kumar, M.

2016-01-01

The development and performance of a 16 channel hybrid fast timing amplifier (FTA), for extracting timing information from silicon strip detectors (SSD), is described. The FTA will be used in a time of flight (TOF) measurement, in which one SSD is used to obtain the ion velocity (A) as well as the energy information of a scattered particle. The TOF information with a thin transmission SSD, acting as ΔE detector (Z) in a detector telescope, will provide a unique detection system for the identification of reaction products in the slowed down beam campaign of low energy branch (LEB) at NUSTAR-FAIR. Such a system will also provide large solid angle coverage with ~ 100% detection efficiency, and adequate segmentation for angular information. A good timing resolution (≤ 100 ps) enables to have shorter flight paths, thus a closely packed 4π array should be feasible. Preamplifiers for energy readout in SSD are easily available. A major constraint with SSDs is the missing high density multichannel preamplifiers which can provide both fast timing as well as energy. Provision of both timing and energy processing, generally makes circuit bulky, with higher power consumption, which may not be suitable in SSD arrays. In case of DSSSD, the problem was overcome by using timing from one side and energy from the other side. A custom designed 16 channel FTA has been developed for DSSSD design W from Micron Semiconductors, UK

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Science.gov (United States)

De Cesare, M.; De Cesare, N.; D'Onofrio, A.; Gialanella, L.; Terrasi, F.

2015-04-01

Accelerator Mass Spectrometry (AMS) is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE) in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10-11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E) system with a 16-strip silicon detector (4.9×10-12 just with one strip).

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

Science.gov (United States)

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

International Nuclear Information System (INIS)

Cherkaoui, K.

1998-01-01

The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

Science.gov (United States)

Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

2016-03-01

The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

Resolution and Efficiency of the ATLAS Muon Drift-Tube Chambers at High Background Rates

CERN Document Server

Deile, M.; Horvat, S.; Kortner, O.; Kroha, H.; Manz, A.; Mohrdieck-Mock, S.; Rauscher, F.; Richter, Robert; Staude, A.; Stiller, W.

2016-01-01

The resolution and efficiency of a precision drift-tube chamber for the ATLAS muon spectrometer with final read-out electronics was tested at the Gamma Irradiation Facility at CERN in a 100 GeV muon beam and at photon irradiation rates of up to 990 Hz/square cm which corresponds to twice the highest background rate expected in ATLAS. A silicon strip detector telescope was used as external reference in the beam. The pulse-height measurement of the read-out electronics was used to perform time-slewing corrections which lead to an improvement of the average drift-tube resolution from 104 microns to 82 microns without irradiation and from 128 microns to 108 microns at the maximum expected rate. The measured drift-tube efficiency agrees with the expectation from the dead time of the read-out electronics up to the maximum expected rate.

Data quality monitoring of the CMS Silicon Strip Tracker detector

International Nuclear Information System (INIS)

Benucci, L.

2010-01-01

The Physics and Data Quality Monitoring (DQM) framework aims at providing a homogeneous monitoring environment across various applications related to data taking at the CMS experiment. In this contribution, the DQM system for the Silicon Strip Tracker will be introduced. The set of elements to assess the status of detector will be mentioned, along with the way to identify problems and trace them to specific tracker elements. Monitoring tools, user interfaces and automated software will be briefly described. The system was used during extensive cosmic data taking of CMS in Autumn 2008, where it demonstrated to have a flexible and robust implementation and has been essential to improve the understanding of the detector. CMS Collaboration believes that this tool is now mature to face the forthcoming data-taking era.

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Directory of Open Access Journals (Sweden)

De Cesare M.

2015-01-01

Full Text Available Accelerator Mass Spectrometry (AMS is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10−11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E system with a 16-strip silicon detector (4.9×10−12 just with one strip.

Performance of the front-end signal processing electronics for the drift chambers of the Stanford Large Detector

International Nuclear Information System (INIS)

Honma, A.; Haller, G.M.; Usher, T.; Shypit, R.

1990-10-01

This paper reports on the performance of the front-end analog and digital signal processing electronics for the drift chambers of the Stanford Large Detector (SLD) detector at the Stanford Linear Collider. The electronics mounted on printed circuit boards include up to 64 channels of transimpedance amplification, analog sampling, A/D conversion, and associated control circuitry. Measurements of the time resolution, gain, noise, linearity, crosstalk, and stability of the readout electronics are described and presented. The expected contribution of the electronics to the relevant drift chamber measurement resolutions (i.e., timing and charge division) is given

Feasibility of conversion electron spectrometry using a Peltier-cooled silicon drift detector

International Nuclear Information System (INIS)

Perajarvi, K.; Turunen, J.; Ihantola, S.; Pollanen, R.; Siiskonen, T.; Toivonen, H.; Kamarainen, V.; Pomme, S.

2014-01-01

A Peltier-cooled silicon drift detector was successfully applied for conversion electron spectrometry. The energy resolution of the detector for 45 keV electrons was 0.50 keV (FWHM). The approximate thickness of the dead layer was determined to be 140 ± 20 nm Si equivalent. The relative efficiency of the detector was verified to be approximately constant in the energy range of 17-75 keV. This is concordant with the high transparency of the thin dead layer and the sufficient thickness of the detector (450 μm) to stop the electrons. The detector is suitable for use in plutonium analysis of chemically prepared samples. Moreover, it was demonstrated that conversion electron spectrometry is better than alpha spectrometry in preserving its capability to determine the 240 Pu/ 239 Pu isotopic ratio as a function of sample thickness. The investigated measurement technique can be considered a promising new tool in safeguards, complementary to existing methods. (author)

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

International Nuclear Information System (INIS)

Poley, Luise; Bloch, Ingo; Edwards, Sam

2016-04-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

Energy Technology Data Exchange (ETDEWEB)

Poley, Luise [DESY, Zeuthen (Germany); Humboldt Univ. Berlin (Germany); Bloch, Ingo [DESY, Zeuthen (Germany); Edwards, Sam [Birmingham Univ. (United Kingdom); and others

2016-04-15

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

Science.gov (United States)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

International Nuclear Information System (INIS)

Poley, L.; Bloch, I.; Friedrich, C.; Gregor, I.-M.; Edwards, S.; Pyatt, S.; Wilson, J.; Jones, T.; Lacker, H.; Rehnisch, L.; Sperlich, D.

2016-01-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

International Nuclear Information System (INIS)

Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

2011-01-01

Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

Development of a novel depth of interaction PET detector using highly multiplexed G-APD cross-strip encoding

Energy Technology Data Exchange (ETDEWEB)

Kolb, A., E-mail: armin.kolb@med.uni-tuebingen.de; Parl, C.; Liu, C. C.; Pichler, B. J. [Werner Siemens Imaging Center, Department of Preclinical Imaging and Radiopharmacy, Eberhard Karls University, 72076 Tübingen (Germany); Mantlik, F. [Werner Siemens Imaging Center, Department of Preclinical Imaging and Radiopharmacy, Eberhard Karls University, 72076 Tübingen, Germany and Department of Empirical Inference, Max Planck Institute for Intelligent Systems, 72076 Tübingen (Germany); Lorenz, E. [Max Planck Institute for Physics, Föhringer Ring 6, 80805 München (Germany); Renker, D. [Department of Physics, Technische Universität München, 85748 Garching (Germany)

2014-08-15

Purpose: The aim of this study was to develop a prototype PET detector module for a combined small animal positron emission tomography and magnetic resonance imaging (PET/MRI) system. The most important factor for small animal imaging applications is the detection sensitivity of the PET camera, which can be optimized by utilizing longer scintillation crystals. At the same time, small animal PET systems must yield a high spatial resolution. The measured object is very close to the PET detector because the bore diameter of a high field animal MR scanner is limited. When used in combination with long scintillation crystals, these small-bore PET systems generate parallax errors that ultimately lead to a decreased spatial resolution. Thus, we developed a depth of interaction (DoI) encoding PET detector module that has a uniform spatial resolution across the whole field of view (FOV), high detection sensitivity, compactness, and insensitivity to magnetic fields. Methods: The approach was based on Geiger mode avalanche photodiode (G-APD) detectors with cross-strip encoding. The number of readout channels was reduced by a factor of 36 for the chosen block elements. Two 12 × 2 G-APD strip arrays (25μm cells) were placed perpendicular on each face of a 12 × 12 lutetium oxyorthosilicate crystal block with a crystal size of 1.55 × 1.55 × 20 mm. The strip arrays were multiplexed into two channels and used to calculate the x, y coordinates for each array and the deposited energy. The DoI was measured in step sizes of 1.8 mm by a collimated {sup 18}F source. The coincident resolved time (CRT) was analyzed at all DoI positions by acquiring the waveform for each event and applying a digital leading edge discriminator. Results: All 144 crystals were well resolved in the crystal flood map. The average full width half maximum (FWHM) energy resolution of the detector was 12.8% ± 1.5% with a FWHM CRT of 1.14 ± 0.02 ns. The average FWHM DoI resolution over 12 crystals was 2.90 �

Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

Science.gov (United States)

Adams, Aaron Lee

Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging

Proposed method of assembly for the BCD silicon strip vertex detector modules

International Nuclear Information System (INIS)

Lindenmeyer, C.

1989-01-01

The BCD Silicon strip Vertex Detector is constructed of 10 identical central region modules and 18 similar forward region modules. This memo describes a method of assembling these modules from individual silicon wafers. Each wafer is fitted with associated front end electronics and cables and has been tested to insure that only good wafers reach the final assembly stage. 5 figs

Investigation of the charge collection for strongly irradiated silicon strip detectors of the CMS ECAL Preshower

International Nuclear Information System (INIS)

Bloch, Ph.; Peisert, A.; Chang, Y.H.; Chen, A.E.; Hou, S.; Lin, W.T.; Cheremukhin, A.E.; Golutvin, I.A.; Urkinbaev, A.R.; Zamyatin, N.I.; Loukas, D.

2001-01-01

Strongly irradiated (2.3·10 14 n/cm 2 ) silicon strip detectors of different size, thickness and different design options were tested in a muon beam at CERN in 1999. A charge collection efficiency in excess of 85% and a signal-to-noise ratio of about 6 are obtained in all cases at high enough bias voltage. Details of the charge collection in the interstrip and the guard ring region and cross-talk between strips were also studied. We find that the charge collection efficiency and the cross-talk between strips depend on the interstrip distance

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Monolithic front-end ICs for interpolating cathode pad and strip detectors for GEM

International Nuclear Information System (INIS)

O'Connor, P.

1993-05-01

We are developing CMOS circuits for readout of interpolating cathode strip and pad chambers for the GEM experiment at the SSC. Because these detectors require position resolution of about 1% of the strip pitch, the electronic noise level must be less than 2000 electrons. Several test chips have been fabricated to demonstrate the feasibility of achieving the combination of low noise, speed, and wide dynamic range in CMOS. Results to date show satisfactory noise and linearity performance. Future development will concentrate on radiation-hardening the central tracker ASIC design, optimizing the shaper peaking time and noise contribution, providing more user-configurable output options, and packaging and test issues

Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector

International Nuclear Information System (INIS)

Wembe Tafo Evariste; Su Hong; Qian Yi; Kong Jie; Wang Tongxi

2010-01-01

The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip, Si (Li), CdZnTe and CsI detectors, etc., which can be further integrated the whole system and adopted to develop CMOS-based application, specific integrated circuit for Front End Electronics (FEE) of read-out system of nuclear physics, particle physics and astrophysics research, etc. It's why we used only CMOS transistor to develop the entire system. A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC 4 filter, we perform shaping time in the range, 465 ns to 2.76μs with a low output resistance and the linearity almost good. (authors)

Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

CERN Document Server

Giacomini, Gabriele

Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

Science.gov (United States)

Sokolov, Oleksiy

2006-04-01

The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5˜TeV per nucleon. Particle tracking around the interaction region at radii rrequire about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bonding operation, the component testing is done to reject the non-functional or poorly performing chips and hybrids. The LabView-controlled test station for this operation has been built at Utrecht University and was successfully used for mass production acceptance tests of chips and hybrids at three production labs. The functionality of the chip registers, bonding quality and analogue functionality of the chips and hybrids are addressed in the test. The test routines were optimized to minimize the testing time to make sure that testing is not a bottleneck of the mass production. For testing of complete modules the laser scanning station with 1060 nm diode laser has been assembled at Utrecht University. The testing method relies of the fact that a response of the detector module to a short collimated laser beam pulse resembles a response to a minimum ionizing particle. A small beam spot size (˜7 μm ) allows to deposit the charge in a narrow region and measure the response of individual detector channels. First several module prototypes have been studied with this setup, the strip gain and charge sharing function have been measured, the later is compared with the model predictions. It was also shown that for a laser beam of a high monochromaticity, interference in the sensor bulk significantly modulates

Apparatus for measuring profile thickness of strip material

International Nuclear Information System (INIS)

Hold, A.C.

1982-01-01

Apparatus for measuring the thickness profile of steel strip comprises a radiation source reciprocally movable in a stepwise fashion (by a belt) across the strip width on one side thereof and a single elongated detector on the other side of the strip aligned with the scanning source. This detector may be a fluorescent scintillator detector or an ionisation chamber. Means are provided for sensing the degree of excitation in the detector in synchronism with the scanning source whereby to provide an output representative of the thickness profile of the strip. (author)

Development of a CZT drift ring detector for X and γ ray spectroscopy

Science.gov (United States)

Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Boothman, V.; Veeramani, P.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

2015-04-01

CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 keV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

2014-11-17

The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

A time-based front-end ASIC for the silicon micro strip sensors of the P-bar ANDA Micro Vertex Detector

International Nuclear Information System (INIS)

Pietro, V. Di; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Stockmanns, T.; Zambanini, A.; Rivetti, A.; Rolo, M.D.

2016-01-01

The P-bar ANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA ( P-bar ANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels

High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

International Nuclear Information System (INIS)

Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shin'ichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka

2012-01-01

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

Interference coupling mechanisms in Silicon Strip Detectors - CMS tracker "wings" A learned lesson for SLHC

CERN Document Server

Arteche, F; Rivetta, C

2009-01-01

The identification of coupling mechanisms between noise sources and sensitive areas of the front-end electronics (FEE) in the previous CMS tracker sub-system is critical to optimize the design and integration of integrated circuits, sensors and power distribution circuitry for the proposed SLHC Silicon Strip Tracker systems. This paper presents a validated model of the noise sensitivity observed in the Silicon Strip Detector-FEE of the CMS tracker that allows quantifying both the impact of the noise coupling mechanisms and the system immunity against electromagnetic interferences. This model has been validated based on simulations using finite element models and immunity tests conducted on prototypes of the Silicon Tracker End-Caps (TEC) and Outer Barrel (TOB) systems. The results of these studies show important recommendations and criteria to be applied in the design of future detectors to increase the immunity against electromagnetic noise.

Performance of a single photon counting microstrip detector for strip pitches down to 10 μm

International Nuclear Information System (INIS)

Bergamaschi, A.; Broennimann, Ch.; Dinapoli, R.; Eikenberry, E.; Gozzo, F.; Henrich, B.; Kobas, M.; Kraft, P.; Patterson, B.; Schmitt, B.

2008-01-01

The MYTHEN detector is a one-dimensional microstrip detector with single photon counting readout optimized for time resolved powder diffraction experiments at the Swiss Light Source (SLS). The system has been successfully tested for many different synchrotron radiation applications including phase contrast and tomographic imaging, small angle scattering, diffraction and time resolved pump and probe experiments for X-ray energies down to 5 keV and counting rate up to 3 MHz. The frontend electronics is designed in order to be coupled to 50 μm pitch microstrip sensors but some interest in enhancing the spatial resolution is arising for imaging and powder diffraction experiments. A test structure with strip pitches in the range 10-50 μm has been tested and the gain and noise on the readout electronics have been measured for the different strip pitches, observing no large difference down to 25 μm. Moreover, the effect of the charge sharing between neighboring strips on the spatial resolution has been quantified by measuring the Point Spread Function (PSF) of the system for the different pitches

Performance of a single photon counting microstrip detector for strip pitches down to 10 μm

Science.gov (United States)

Bergamaschi, A.; Broennimann, Ch.; Dinapoli, R.; Eikenberry, E.; Gozzo, F.; Henrich, B.; Kobas, M.; Kraft, P.; Patterson, B.; Schmitt, B.

2008-06-01

The MYTHEN detector is a one-dimensional microstrip detector with single photon counting readout optimized for time resolved powder diffraction experiments at the Swiss Light Source (SLS). The system has been successfully tested for many different synchrotron radiation applications including phase contrast and tomographic imaging, small angle scattering, diffraction and time resolved pump and probe experiments for X-ray energies down to 5 keV and counting rate up to 3 MHz. The frontend electronics is designed in order to be coupled to 50 μm pitch microstrip sensors but some interest in enhancing the spatial resolution is arising for imaging and powder diffraction experiments. A test structure with strip pitches in the range 10-50 μm has been tested and the gain and noise on the readout electronics have been measured for the different strip pitches, observing no large difference down to 25 μm. Moreover, the effect of the charge sharing between neighboring strips on the spatial resolution has been quantified by measuring the Point Spread Function (PSF) of the system for the different pitches.

NaI(Tl) scintillator detectors stripping procedure for air kerma measurements of diagnostic X-ray beams

Energy Technology Data Exchange (ETDEWEB)

Oliveira, L.S.R. [Centro Tecnológico do Exército, CTEx (Brazilian Army Technological Center), Av. das Américas n° 28705, 23085-470 Rio de Janeiro (Brazil); Instituto de Radioprotecão e Dosimetria, CNEN/IRD (Institute for Radioprotection and Dosimetry, CNEN/IRD), Av. Salvador Allende s/no, P.O. Box 37750, 22783-127 Barra da Tijuca, Rio de Janeiro (Brazil); Conti, C.C., E-mail: ccconti@ird.gov.br [Instituto de Radioprotecão e Dosimetria, CNEN/IRD (Institute for Radioprotection and Dosimetry, CNEN/IRD), Av. Salvador Allende s/no, P.O. Box 37750, 22783-127 Barra da Tijuca, Rio de Janeiro (Brazil); Amorim, A.S.; Balthar, M.C.V. [Centro Tecnológico do Exército, CTEx (Brazilian Army Technological Center), Av. das Américas n° 28705, 23085-470 Rio de Janeiro (Brazil)

2013-03-21

Air kerma is an essential quantity for the calibration of national standards used in diagnostic radiology and the measurement of operating parameters used in radiation protection. Its measurement within the appropriate limits of accuracy, uncertainty and reproducibility is important for the characterization and control of the radiation field for the dosimetry of the patients submitted to diagnostic radiology and, also, for the assessment of the system which produces radiological images. Only the incident beam must be considered for the calculation of the air kerma. Therefore, for energy spectrum, counts apart the total energy deposition in the detector must be subtracted. It is necessary to establish a procedure to sort out the different contributions to the original spectrum and remove the counts representing scattered photons in the detector’s materials, partial energy deposition due to the interactions in the detector active volume and, also, the escape peaks contributions. The main goal of this work is to present spectrum stripping procedure, using the MCNP Monte Carlo computer code, for NaI(Tl) scintillation detectors to calculate the air kerma due to an X-ray beam usually used in medical radiology. The comparison between the spectrum before stripping procedure against the reference value showed a discrepancy of more than 63%, while the comparison with the same spectrum after the stripping procedure showed a discrepancy of less than 0.2%.

Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

International Nuclear Information System (INIS)

Franc, J.; Hoeschl, P.; Belas, E.; Grill, V.; Fauler, A.; Dambacher, M.; Procz, S.

2011-01-01

Full text: There is a growing need for large area X-and Gamma radiation detectors for penetrating radiations in various fields of application e.g. astronomy, detectors for nuclear medicine, biosensor materials, security, non-proliferation of hazardous materials, and environmental applications etc. Direct X-rays conversion into electric charges in a semiconductor is envisaged with better spectroscopic characteristics to improve contrast and quantitative measurements compared to indirect detection using scintillators. The family of II-VI semiconductor materials combine a range of excellent properties such as their high sensitivity due to the high mobility-lifetime products, their high energy resolution as a consequence of the electron-hole pair formation energy, their reasonable maturity in terms of microelectronic technologies required for commercial detector fabrication, wide range of stopping power and band-gaps available. In particular, CdTe and Cd x Zn 1-x Te (CZT) with Zn=0.1 offer a favorable combination of physical and chemical properties that makes it attractive as a room temperature X-ray detector material of choice for many applications involving photon energies up to several hundreds of keV. From the scientific experience accumulated in the past years, the detector properties are strongly dependent on a series of parameters which must be strictly controlled during crystal growth, such as the homogeneity, stoichiometry and the related intrinsic defects which appear during the material growth, a high mobility-lifetime for electron and holes is mandatory etc. Production of detector-grade CdTe and CdZnTe on industrial scale is still a challenge and optimal growth methods and growth conditions have been under intensive investigation. Progress in crystal growth and characterization achieved in a project of Institute partnership between Charles University in Prague and University of Freiburg, Germany which was sponsored by Alexander von Humboldt Foundation, will

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

International Nuclear Information System (INIS)

Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

2014-01-01

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

Energy Technology Data Exchange (ETDEWEB)

Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

International Nuclear Information System (INIS)

Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

2016-01-01

A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Tian, Y., E-mail: cycjty@sophie.q.t.u-tokyo.ac.jp [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Shimazoe, K.; Yan, X. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ueda, O.; Ishikura, T. [Fuji Electric Co., Ltd., Fuji, Hino, Tokyo 191-8502 (Japan); Fujiwara, T. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Uesaka, M.; Ohno, M. [Nuclear Professional School, the University of Tokyo, 2-22 Shirakata-shirane, Tokai, Ibaraki 319-1188 (Japan); Tomita, H. [Department of Quantum Engineering, Nagoya University, Furo, Chikusa, Nagoya 464-8603 (Japan); Yoshihara, Y. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takahashi, H. [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-09-11

A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

Output factor determination for dose measurements in axial and perpendicular planes using a silicon strip detector

Science.gov (United States)

Abou-Haïdar, Z.; Bocci, A.; Alvarez, M. A. G.; Espino, J. M.; Gallardo, M. I.; Cortés-Giraldo, M. A.; Ovejero, M. C.; Quesada, J. M.; Arráns, R.; Prieto, M. Ruiz; Vega-Leal, A. Pérez; Nieto, F. J. Pérez

2012-04-01

In this work we present the output factor measurements of a clinical linear accelerator using a silicon strip detector coupled to a new system for complex radiation therapy treatment verification. The objective of these measurements is to validate the system we built for treatment verification. The measurements were performed at the Virgin Macarena University Hospital in Seville. Irradiations were carried out with a Siemens ONCOR™ linac used to deliver radiotherapy treatment for cancer patients. The linac was operating in 6 MV photon mode; the different sizes of the fields were defined with the collimation system provided within the accelerator head. The output factor was measured with the silicon strip detector in two different layouts using two phantoms. In the first, the active area of the detector was placed perpendicular to the beam axis. In the second, the innovation consisted of a cylindrical phantom where the detector was placed in an axial plane with respect to the beam. The measured data were compared with data given by a commercial treatment planning system. Results were shown to be in a very good agreement between the compared set of data.

Local Trigger Electronics for the CMS Drift Tubes Muon detector

CERN Document Server

Travaglini, R

2003-01-01

In the CMS detector in preparation for the CERN LHC collider, the Drift Tubes Muon Chambers are equipped with mini-crates hosting custom electronics for fast data processing and local trigger generation. In particular the Trigger Server of a DTC consists of Track Sorter Slave ASICs and a Track Sorter Master system. The trigger electronics boards are in production, to be ready for the muon detector installation in the CMS barrel starting at the end of 2003.In this work, the performance of the Trigger Server will be discussed, on the basis both of high-statistics tests with predefined patterns and of test beam data collected at CERN, where a DTC was exposed to a muon beam having an LHC-like bunch structure. Finally, some system performance expectations, concerning radiation tolerance and signal transmission issues during LHC running, will be also discussed.

Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

CERN Document Server

INSPIRE-00407830; Blue, Andrew; Bates, Richard; Bloch, Ingo; Diez, Sergio; Fernandez-Tejero, Javier; Fleta, Celeste; Gallop, Bruce; Greenall, Ashley; Gregor, Ingrid-Maria; Hara, Kazuhiko; Ikegami, Yoichi; Lacasta, Carlos; Lohwasser, Kristin; Maneuski, Dzmitry; Nagorski, Sebastian; Pape, Ian; Phillips, Peter W.; Sperlich, Dennis; Sawhney, Kawal; Soldevila, Urmila; Ullan, Miguel; Unno, Yoshinobu; Warren, Matt

2016-07-29

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1x10^35 cm^-2 s^-1 after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1, requiring the tracking detectors to withstand hadron equivalences to over 1x10^16 1 MeV neutrons per cm^2. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 micron FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 micron thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 micron thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout...

Improved method for the stabilization of NaI-photomultiplier gamma detectors against thermal and other drift

International Nuclear Information System (INIS)