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Sample records for cdznte pixel detectors

  1. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

  2. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm2) or 256 (0.5x0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 oC. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  3. Fabrication of pixelated CdTe and CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) are compound semiconductor characterized by wide semiconducting band gap and high photon stopping power due to its high atomic number and density. The mobility-life time product (μ t product) for holes in the materials is smaller than that for electrons. Hence, the effect of trapping losses is more pronounced on holes than on electrons. The trapping losses for holes limit achievable energy resolutions for planar detectors. In this study, pixelated CdTe detectors and pixelated CdZnTe detectors were fabricated and tested by 662 KeV gamma-rays of 137Cs at room temperature. Electrodes were formed on both sides of CdTe crystals and CdZnTe crystals by vacuum evaporation of gold. For purpose of comparison, a planar CdTe detector and a planar CdZnTe detector were evaluated. Since the pixelated CdTe detectors and the pixelated CdZnTe detectors operated as a single-polarity charge sensing device, the obtained energy resolutions were significantly higher than those for the planar detectors. Further improvement of energy resolutions of the detectors will be achieved by optimizing electrode structures. (M. Suetake)

  4. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector

    International Nuclear Information System (INIS)

    Using the pixellated CdZnTe detector,the radiation imaging experiment for the Rh target X-ray source was accomplished. The experimental results indicate that the response signals of the anode pixels, which distribute over the center irradiated area,are completely shut-off when the tube Jantage is 45 kV and the tube current increases to 20 μA. Moreover, the non-response pixel area expands with the increase of the tube current, and the total event count of the CdZnTe detector reduces obviously. Furthermore, the inner electric potential and electric field distributions of the pixellated CdZnTe detector were simulated based on the Poisson equation. The simulation results reveal that the accumulation of the hole carriers, which results from the extremely low drift ability of the hole carrier, leads to a relatively high space-charge-density area in the CdZnTe bulk when the irradiated photon flux increases to 5 x 105 mm-2·s-1. And thus, the induced signal screen effect of the anode pixels in the center irradiated area is mainly attributed to the distorted electric field which makes electron carriers drift toward the high potential area in the CdZnTe crystal instead of the pixel anodes. (authors)

  5. Timing performance of pixellated CdZnTe detectors

    International Nuclear Information System (INIS)

    Recently introduced nuclear medicine cameras in which Positron Emission Tomography (PET) and the traditional Single Photon Emission Computerized Tomography (SPECT), are combined opened new horizon for the nuclear medicine field These systems applying NaI(Tl) scintillation detectors we very well tested and mailable for some time in the medical imaging field However the traditional NaI(Tl) cameras, optimized for low energy radiation imaging, suffer some severe limitations. The relatively low density (3.67 g/cm2) of NaI(Tl) limits the sensitivity. By incarcerating the NaI(Tl) thickness, the spatial resolution decreases. The long decay time (230 nsec) of the light emitted in NaI(Tl) restricts the the use of coincidence technique , as well as the count rate. In recent years CdZn Te (CZT) detectors are studied for the purpose of SPECT nuclear medical radiation imaging in the form of pixellated and microstrip detectors. CZT detector can served as a good candidate for replacing NaI(Tl) for PET and SPECT imaging due to their relatively high stopping power (density = (6.0 g/im3, high Z(48, 30, 52)) and their high count rate capability. Unfortunately there are several difficulties in PET application due to the difficulty in manufacturing thick crystals, registration of the full energy deposited in several pixels and their timing capabilities. The latter is due to large ballistic signal variation induced. This variations caused by the pulse shape, which is composed of two main components, the electron and the hole. The electrons travel about ten times faster than the holes. A photon absorbed clear the cathode plane will cause a large and fast signal induced by the electron and a small and slow signal induced due to the holes. Photons absorbed near the anode plane will induce the opposite signals. The distribution of photon absorption depth in the crystal causes signal splits over a number of pixels, due to the well-known 'small pixel effect'. The different pulses slope

  6. Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.;

    2002-01-01

    We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the exis......We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition......, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system...... between the pixel contacts. When the grid is negatively biased, the strong electric field in the gaps between the pixels forces the electrons landing on the surface to move toward the contacts, preventing the charge loss. We have investigated these effects by using CZT pixel detectors indium bump...

  7. Pixellated CdZnTe detector for emission/transmission computed tomography

    International Nuclear Information System (INIS)

    A small pixellated CdZnTe array is tested for suitability in a prototype SPECT system designed to acquire both emission and transmission data. Determining the optimum contact design and obtaining performance estimates of single photon acquisition are the primary focus. Flood field and collimated 57Co sources irradiated the 16 pixel array (5 mm thick and 1.5 mm pixels) to determine photopeak efficiencies and detector response with different event collection techniques. Intrinsic full energy peak efficiency averaged 72% for an 18 keV acceptance window. A small irradiation spot scanned an array region, revealing detector response from nearby pixels. Post processing spectra compare coincident and anti-coincident acquisition. Additionally, current mode tests compare linearity with a CdWO4/Si p-i-n detector

  8. Gas filled prototype of a CdZnTe pixel detector

    International Nuclear Information System (INIS)

    CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5-100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 (2001) 55) we presented preliminary results on the development of prototype 4x4 CdZnTe imaging detectors operated under vacuum. These pixel detectors were installed inside vacuum chambers on three-stage Peltier coolers providing detector temperatures down to -40 deg. C. A miniature sputter ion pump inside each chamber maintained the necessary vacuum of 10-5 Torr. At a temperature of -20 deg. C we achieved an FWHM energy resolution of between 2% and 3% at 60 keV and ∼15% at 5.9 keV; however, the dependency on temperature was weak and at +20 deg. C the respective resolutions were 3% and 20%. As the detectors could be operated at room temperature without loss of their good characteristics it was possible to exclude the sputter ion pump and fill the chamber with dry nitrogen instead. We have tested a nitrogen-filled CdZnTe (5x5x1 mm3) prototype having 0.65x0.65 mm2 readout pads on a 0.75 mm pitch. The interpixel resistance at an applied voltage of 10 V was higher than 50 GΩ and the pixel leakage currents at room temperature with a bias of 200 V between each pad and the common electrode did not exceed 0.8 nA. The pixel detector inside the microassembly, which also contained the input stages of the preamplifiers, was installed on a Peltier cooler to maintain the detector temperature at +20 deg. C. To define real leakage currents of the pixels in their switched-on state we have checked the voltage on the preamplifiers feedback resistors. The resulting currents were 10-50 pA at a detector bias of 500 V. Under test, the typical energy resolution per pixel at +20 deg. C was ∼3% at energy 59.6 keV and ∼20% at energy 5.9 keV, which are similar to the values obtained in the vacuum prototype at room temperature

  9. Gas filled prototype of a CdZnTe pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Ramsey, B.; Sharma, D.; Sipila, H.; Gostilo, V. E-mail: bsi@bsi.lv; Loupilov, A

    2001-06-01

    CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5-100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 (2001) 55) we presented preliminary results on the development of prototype 4x4 CdZnTe imaging detectors operated under vacuum. These pixel detectors were installed inside vacuum chambers on three-stage Peltier coolers providing detector temperatures down to -40 deg. C. A miniature sputter ion pump inside each chamber maintained the necessary vacuum of 10{sup -5} Torr. At a temperature of -20 deg. C we achieved an FWHM energy resolution of between 2% and 3% at 60 keV and {approx}15% at 5.9 keV; however, the dependency on temperature was weak and at +20 deg. C the respective resolutions were 3% and 20%. As the detectors could be operated at room temperature without loss of their good characteristics it was possible to exclude the sputter ion pump and fill the chamber with dry nitrogen instead. We have tested a nitrogen-filled CdZnTe (5x5x1 mm{sup 3}) prototype having 0.65x0.65 mm{sup 2} readout pads on a 0.75 mm pitch. The interpixel resistance at an applied voltage of 10 V was higher than 50 G{omega} and the pixel leakage currents at room temperature with a bias of 200 V between each pad and the common electrode did not exceed 0.8 nA. The pixel detector inside the microassembly, which also contained the input stages of the preamplifiers, was installed on a Peltier cooler to maintain the detector temperature at +20 deg. C. To define real leakage currents of the pixels in their switched-on state we have checked the voltage on the preamplifiers feedback resistors. The resulting currents were 10-50 pA at a detector bias of 500 V. Under test, the typical energy resolution per pixel at +20 deg. C was {approx}3% at energy 59.6 keV and {approx}20% at energy 5.9 keV, which are similar to the values obtained in the

  10. Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Gostilo, V.; Ivanov, V.; Kostenko, S.; Lisjutin, I.; Loupilov, A.; Nenonen, S.; Sipila, H.; Valpas, K

    2001-03-11

    Current and spectrometrical characteristics, stability in time and reliability of pixel and strip detectors depend on initial material properties, crystal processing quality and contacts manufacture technology. The work presents analysis of current-voltage and spectrometrical characteristics for initial CdTe and CdZnTe crystals applied for pixel and strip detectors manufacture. The crystal surface preparation before contacts manufacture comprises a modified technology. The contacts were made by photolithography with the surface protected by photoresist with further windows lift-off and crystal surface metallization in lifted-off windows. Metal pads were made by gold deposition from chloroauric acid. Thermocompression, ultrasonic and pulse wirebonding, as well as traditional contacts glueing method for CdTe and CdZnTe detectors have been tested for contacts wiring. The pulse wirebonding has revealed the best results. Wiring is made of gold wire with a diameter of 30 {mu}m and is good enough for pixel and strip wirebonding, providing rather low labour-intensiveness for their assembly by standard equipment. The possibility of fabrication of pressing contacts to strip and pixel detectors by Zebra elastomeric connectors has been investigated. The pressing contacts have provided qualitative and reliable electrical contact and signal layout from pixels and strips to readout electronics. Developed technologies were applied in the manufacture of the following CdTe and CdZnTe detectors: 4x4 pixels detector with rectangular pixels 0.65x0.65 mm and pitch 0.75 mm; 4x4 pixels ring miltiple-electrode detector with anode diameter 0.32 mm and pitch 0.75 mm; strip detector with 100 {mu}m width strip and 125 {mu}m pitch. The 4x4 pixels CdZnTe detector has provided at optimal temperature energy resolutions of 808 eV and 1.19 keV at energies of 5.9 and 59.6 keV, respectively. Interstrip resistance between two strips with a distance of 25 {mu}m on detector was 2-8 G{omega}.

  11. Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

    International Nuclear Information System (INIS)

    Current and spectrometrical characteristics, stability in time and reliability of pixel and strip detectors depend on initial material properties, crystal processing quality and contacts manufacture technology. The work presents analysis of current-voltage and spectrometrical characteristics for initial CdTe and CdZnTe crystals applied for pixel and strip detectors manufacture. The crystal surface preparation before contacts manufacture comprises a modified technology. The contacts were made by photolithography with the surface protected by photoresist with further windows lift-off and crystal surface metallization in lifted-off windows. Metal pads were made by gold deposition from chloroauric acid. Thermocompression, ultrasonic and pulse wirebonding, as well as traditional contacts glueing method for CdTe and CdZnTe detectors have been tested for contacts wiring. The pulse wirebonding has revealed the best results. Wiring is made of gold wire with a diameter of 30 μm and is good enough for pixel and strip wirebonding, providing rather low labour-intensiveness for their assembly by standard equipment. The possibility of fabrication of pressing contacts to strip and pixel detectors by Zebra elastomeric connectors has been investigated. The pressing contacts have provided qualitative and reliable electrical contact and signal layout from pixels and strips to readout electronics. Developed technologies were applied in the manufacture of the following CdTe and CdZnTe detectors: 4x4 pixels detector with rectangular pixels 0.65x0.65 mm and pitch 0.75 mm; 4x4 pixels ring miltiple-electrode detector with anode diameter 0.32 mm and pitch 0.75 mm; strip detector with 100 μm width strip and 125 μm pitch. The 4x4 pixels CdZnTe detector has provided at optimal temperature energy resolutions of 808 eV and 1.19 keV at energies of 5.9 and 59.6 keV, respectively. Interstrip resistance between two strips with a distance of 25 μm on detector was 2-8 GΩ

  12. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  13. Improvement of the energy resolution in a pixellated CdZnTe detector using depth sensing based on pulse rise-time correlation

    International Nuclear Information System (INIS)

    In this work we present the pulse rise-time method by using signals from one electrode to determine the interaction depth in a 16-pixellated CdZnTe (CZT) detector manufactured by eV Products. Pulse shapes were theoretically calculated by varing the depth in steps of 0.5 mm with fixing the in-plane position. The electric field in the CZT detector was calculated numericallly by using the weighting potential method. The depth information was extracted by the rise-time correlation using calculations for anode pulse shapes. In order to check the accuracy of the pulse shape calculation, we performed a maximum-likelihood fitting process by comparing measured pulse shapes with calculated ones. The pulse shapes were digitally recorded by using a 64-channel 62.5 MS/s digitizer (v1740B) manufactured by CAEN . Gamma rays emitted from a 22Na standard source were bombarded on the negatively biased contact of the CZT detector. The low energy tail of a photo peak attributed to the hole trapping in the energy spectrum was corrected by using the rise-time correlation. The energy resolution was improved from 9.3% to 6.5% for the 511-keV photo peak with the T50 rise-time correlation

  14. Pixel detectors

    CERN Document Server

    Passmore, M S

    2001-01-01

    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  15. Modelling semiconductor pixel detectors

    CERN Document Server

    Mathieson, K

    2001-01-01

    expected after 200 ps in most cases. The effect of reducing the charge carrier lifetime and examining the charge collection efficiency has been utilised to explore how these detectors would respond in a harsh radiation environment. It is predicted that over critical carrier lifetimes (10 ps to 0.1 ns) an improvement of 40 % over conventional detectors can be expected. This also has positive implications for fabricating detectors, in this geometry, from materials which might otherwise be considered substandard. An analysis of charge transport in CdZnTe pixel detectors has been performed. The analysis starts with simulation studies into the formation of contacts and their influence on the internal electric field of planar detectors. The models include a number of well known defect states and these are balanced to give an agreement with a typical experimental I-V curve. The charge transport study extends to the development of a method for studying the effect of charge sharing in highly pixellated detectors. The ...

  16. Prototype Imaging Cd-Zn-Te Array Detector

    OpenAIRE

    Bloser, P. F.; Narita, T; Grindlay, J. E.; Shah, K.

    1998-01-01

    We describe initial results of our program to develop and test Cd-Zn-Te (CZT) detectors with a pixellated array readout. Our primary interest is in the development of relatively thick CZT detectors for use in astrophysical coded aperture telescopes with response extending over the energy range $\\sim 10-600$ keV. The coded aperture imaging configuration requires only relatively large area pixels (1-3 mm), whereas the desired high energy response requires detector thicknesses of at least 3-5 mm...

  17. Design and study of a coplanar grid array CdZnTe detector for improved spatial resolution

    International Nuclear Information System (INIS)

    Coplanar grid (CPG) CdZnTe detectors have been used as gamma-ray spectrometers for years. Comparing with pixelated CdZnTe detectors, CPG CdZnTe detectors have either no or poor spatial resolution, which directly limits its use in imaging applications. To address the issue, a 2×2 CPG array CdZnTe detector with dimensions of 7×7×5 mm3 was fabricated. Each of the CPG pairs in the detector was moderately shrunk in size and precisely designed to improve the spatial resolution while maintaining good energy resolution, considering the charge loss at the surface between the strips of each CPG pairs. Preliminary measurements were demonstrated at an energy resolution of 2.7–3.9% for the four CPG pairs using 662 keV gamma rays and with a spatial resolution of 3.3 mm, which is the best spatial resolution ever achieved for CPG CdZnTe detectors. The results reveal that the CPG CdZnTe detector can also be applied to imaging applications at a substantially higher spatial resolution. - Highlights: • A novel structure of coplanar grid CdZnTe detector was designed to evaluate the possibility of applying the detector to gamma-ray imaging applications. • The best spatial resolution of coplanar grid CdZnTe detectors ever reported has been achieved, along with good spectroscopic performance. • Depth correction of the energy spectra using a new algorithm is presented

  18. Diamond Pixel Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Gobbi, B.; Grim, G.P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; Lynne, L.M.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L. E-mail: perera@physics.rutgers.edu; Pirollo, S.; Plano, R.; Procario, M.; Riester, J.L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M

    2001-06-01

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

  19. Diamond pixel detectors

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bognai, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Doroshenko, J; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foster, J; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Gobbi, B; Grim, G P; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lander, R; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Perera, L P; Pirollo, S; Plano, R; Procario, M; Riester, J L; Roe, S; Rott, C; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Wedenig, R; Weilhammer, Peter; White, C; Zeuner, W; Zöller, M

    2001-01-01

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles. (3 refs).

  20. Diamond Pixel Detectors

    International Nuclear Information System (INIS)

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles

  1. Si, CdTe and CdZnTe radiation detectors for imaging applications

    OpenAIRE

    Schulman, Tom

    2006-01-01

    The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy Simage Ltd. And Oy Ajat Ltd., Finland for X- and gamma ray imaging are presented. This detector technology evolved from the development of Si strip detectors at the Finnish Research Institute for High Energy Physics (SEFT) which later merged with other physics research units to form the Helsinki Institute of Physics (HIP). General ...

  2. The pixelated detector

    CERN Multimedia

    Sutton, C

    1990-01-01

    "Collecting data as patterns of light or subatomic particles is vitally important in all the sciences. The new generation of solid-state detectors called pixel devices could transform experimental research at all levels" (4 pages).

  3. SOI monolithic pixel detector

    Science.gov (United States)

    Miyoshi, T.; Ahmed, M. I.; Arai, Y.; Fujita, Y.; Ikemoto, Y.; Takeda, A.; Tauchi, K.

    2014-05-01

    We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

  4. The ATLAS pixel detector

    OpenAIRE

    Cristinziani, M.

    2007-01-01

    After a ten years planning and construction phase, the ATLAS pixel detector is nearing its completion and is scheduled to be integrated into the ATLAS detector to take data with the first LHC collisions in 2007. An overview of the construction is presented with particular emphasis on some of the major and most recent problems encountered and solved.

  5. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  6. Development of CdZnTe radiation detectors

    Science.gov (United States)

    Bolotnikov, Aleksey; Camarda, Giuseppe; Hossain, Anwar; Kim, Ki Hyun; Yang, Ge; Gul, Rubi; Cui, Yonggang; James, Ralph B.

    2011-08-01

    Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

  7. CdZnTe array detectors for synchrotron radiation applications

    International Nuclear Information System (INIS)

    An X-ray linear-array detector was fabricated using high-pressure Bridgman-grown CdZnTe. The detector area was 175 x 800 μm and the pitch size was 250 μm. The measured dark current for the test 16-element detector was as low as 0.1 pA at 800 V cm-1 with excellent uniformity. Energy spectra were measured using a 57Co radiation source. Both a small-pixel effect and charge sharing were observed. For the arrays, an average 5.8% full width a half-maximum (FWHM) at the 122 keV photopeak was obtained with a standard deviation of 0.2%. A large-area detector (1 x 1 cm) of the same material before fabrication exhibited a low-energy tail at the photopeak, which limits the photopeak FWHM to 8%, typically due to hole trapping. At energies below 60 keV, charge sharing between elements was observed. The charge sharing was greatly reduced by providing a path to ground for unwanted charges. A prototype readout electronic system for an eight-channel array detector was developed. A readout system intended for a multielement solid-state detector system was also used. The array detector will be used for high-energy diffraction and Compton scattering measurements at the Advanced Photon Source. (au)

  8. High efficiency pixellated CdTe detector

    International Nuclear Information System (INIS)

    Position sensitive detectors constructed from compound semiconductors (CdTe, CdZnTe, HgI2) are being developed for a variety of applications where high sensitivity and improved energy resolution are significant advantages over scintillator or gas based systems. We have investigated the possibility of using a CdTe detector array in a SPECT gamma camera that would require a high efficiency at 140 keV. The problem of worsening photopeak efficiencies in thick detectors (due to incomplete charge collection) makes it difficult to maintain a high efficiency which, ironically, is the primary reason for choosing a thicker detector. Recent research has shown that following a simple geometrical design criterion can greatly reduce this deleterious effect. This paper reports on the results from a small prototype pixellated array fabricated using this design. We verify the 'small pixel effect' for a detector thickness and pixel size significantly larger than those used in most other work. A 9-element detector (1 x 1 mm pixels, 4 mm thick) has been fabricated and characterized in terms of energy resolution, peak-to-valley ratio and detection efficiency. Testing of the detector in a fast pulse mode to obtain its high count rate response has also been performed. (orig.)

  9. Pixel detector insertion

    CERN Multimedia

    CMS

    2015-01-01

    Insertion of the Pixel Tracker, the 66-million-channel device used to pinpoint the vertex of each colliding proton pair, located at the heart of the detector. The geometry of CMS is a cylinder lying on its side (22 meters long and 15 meters high in dia

  10. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  11. Gallium arsenide pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bates, R.; DaVia, C.; O`Shea, V.; Raine, C.; Smith, K. [Glasgow Univ. (United Kingdom). Dept. of Physics and Astronomy; Campbell, M.; Cantatore, E.; Heijne, E.M.; Middelkamp, P.; Ropotar, I.; Scharfetter, L.; Snoeys, W. [CERN, ECP Div., CH-1211 Geneva 23 (Switzerland); D`Auria, S.; Papa, C. del [Department of Physics, University of Udine and INFN Trieste, Via delle Scienze 208, I-33100 Udine (Italy); RD8 Collaboration

    1998-06-01

    GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV {pi}{sup -} beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e{sup -}. (orig.) 10 refs.

  12. Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

    International Nuclear Information System (INIS)

    The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

  13. Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

    2011-09-11

    The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

  14. NUCAM3 - A Gamma Camera Using Segmented CdZnTe Detectors

    International Nuclear Information System (INIS)

    NUCAM3 is the latest generation of solid-state Pixellated gamma cameras developed at Soreq NRC. The NUCAM3 head is based on segmented pad monolithic CdZnTe detectors that currently provide a useful field of view of 18.5 cmx20.1 cm. The camera is designed for cardiac SPECT, breast scintimammography, thyroid and other small organ evaluation. We present the physical and imaging characteristics of the NUCAM3 camera and their comparison to state of the art Anger cameras. We show the advantages of CdZnTe technology, which are due to the camera pixel structure and superior energy resolution. These advantages lead to better detectability of small size cold and hot lesions in a scatter environment

  15. Alpine Pixel Detector Layout

    CERN Document Server

    Delebecque, P; The ATLAS collaboration; Geffroy, N; Massol, N; Rambure, T; Todorov, T

    2013-01-01

    A description of an optimized layout of pixel sensors based on a stave that combines both barrel and endcap module orientations. The mechanical stiffness of the structure is provided by carbon fiber shells spaced by carbon foam. The cooling of the modules is provided by two-phase $CO_{2}$ flowing in a thin titanium pipe glued inside the carbon fiber foam. The electrical services of all modules are provided by a single stave flex. This layout eliminates the need for separate barrel and endcap detector structures, and therefore the barrel services material in front of the endcap. The transition from barrel to endcap module orientation is optimized separately for each layer in order to minimize the active pixel area and the traversed material. The sparse module spacing in the endcap part of the stave allows for multiple fixation points, and for a stiff overall structure composed only of staves interconnected by stiff disks.

  16. A single CdZnTe detector for simultaneous CT/SPECT imaging

    International Nuclear Information System (INIS)

    Clinical CT/SPECT systems acquire CT and SPECT data sequentially using different detectors in close proximity to minimise patient movement and interscan delay. We have developed a prototype simultaneous CT/SPECT imager, using a single CdZnTe detector, with the goal of improving image coregistration and decreasing scan time. A 16-pixel CdZnTe detector was operated in pulse-counting mode with 50 ns shaping time. Energy discrimination is used to separate the CT and SPECT data. Simultaneous SPECT and CT images were obtained for a phantom with the X-ray flux limited to reduce pulse pile-up in the radionuclide energy window. At 140 keV, the efficiency and energy resolution are 70% and 10%, respectively, and were constant for fluence rates up to 103 cps per detector element for 140 keV gamma rays, but degrade rapidly at higher fluence rates. In pulse-counting mode, the maximum count rate of 103 cps per element from the CdZnTe detector is sufficient for SPECT imaging, but is considerably lower than the fluence rates encountered in CT. The smallest lesion visually detectable in SPECT is 9 mm and the CT spatial resolution is smaller than 4.5 mm. Image registration is intrinsic because the data can be acquired simultaneously with a single detector with the same reconstruction geometry

  17. ATLAS Pixel Detector Operational Experience

    CERN Document Server

    Di Girolamo, B; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.9% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  18. Infrared Illuminated CdZnTe detectors with improved performance

    International Nuclear Information System (INIS)

    It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm3 to larger with volumes of 1.5 cm3 and 4.0 cm3. The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

  19. PERFORMANCE-LIMITING DEFECTS IN CdZnTe DETECTORS

    International Nuclear Information System (INIS)

    We studied the effects of small, <20 (micro)m, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to hound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within the crystals

  20. Study of the spectrometric performances of monolithic CdTe CdZnTe gamma ray detectors

    OpenAIRE

    Gros D'Aillon, Eric

    2005-01-01

    Pixelated monolithic CdTe / CdZnTe semiconductor gamma ray detectors are brought to replace scintillation detectors for medical applications, notably for single photon emission computed tomography (SPECT). In addition to compactness, they present better spectrometric performances: energy resolution, detection efficiency, and spatial resolution. Moreover, the photons depth of interaction in the crystal can be measured. This work aimed in studying experimentally and by simulation the correlatio...

  1. Charge-Sensitive Front-End Electronics with Operational Amplifiers for CdZnTe Detectors

    CERN Document Server

    Födisch, P; Lange, B; Kirschke, T; Enghardt, W; Kaever, P

    2016-01-01

    Cadmium zinc telluride (CdZnTe, "CZT") radiation detectors are announced to be a game-changing detector technology. However, state-of-the-art detector systems require high-performance readout electronics as well. Even though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, our demands on a high dynamic range for energy measurement and a high throughput are not served by any commercially available circuit. Consequently, we had to develop the analog front-end electronics with operational amplifiers for an 8x8 pixelated CZT detector. For this purpose, we model an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Therefore, we present the mathematical equations for a detailed network analysis. Additionally, we enhance the design with numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, noise level and verify the performance with synthetic detector signals. With this benchm...

  2. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  3. The ALICE Pixel Detector

    International Nuclear Information System (INIS)

    The present document is a brief summary of the performed activities during the 2001 Summer Student Programme at CERN under the Scientific Summer at Foreign Laboratories Program organized by the Particles and Fields Division of the Mexican Physical Society (Sociedad Mexicana de Fisica). In this case, the activities were related with the ALICE Pixel Group of the EP-AIT Division, under the supervision of Jeroen van Hunen, research fellow in this group. First, I give an introduction and overview to the ALICE experiment; followed by a description of wafer probing. A brief summary of the test beam that we had from July 13th to July 25th is given as well

  4. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    International Nuclear Information System (INIS)

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests

  5. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Stahle, C.M. E-mail: carl.stahle@gsfc.nasa.gov; Parker, B.H.; Parsons, A.M.; Barbier, L.M.; Barthelmy, S.D.; Gehrels, N.A.; Palmer, D.M.; Snodgrass, S.J.; Tueller, J

    1999-10-21

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests.

  6. The ALICE pixel detector

    CERN Document Server

    Mercado Perez, J

    2002-01-01

    The present document is a brief summary of the performed activities during the 2001 Summer Student Programme at CERN under the Scientific Summer at Foreign Laboratories Program organized by the Particles and Fields Division of the Mexican Physical Society (Sociedad Mexicana de Fisica). In this case, the activities were related with the ALICE Pixel Group of the EP-AIT Division, under the supervision of Jeroen van Hunen, research fellow in this group. First, I give an introduction and overview to the ALICE experiment; followed by a description of wafer probing. A brief summary of the test beam that we had from July 13th to July 25th is given as well. (3 refs).

  7. Preliminary Performance of CdZnTe Imaging Detector Prototypes

    Science.gov (United States)

    Ramsey, B.; Sharma, D. P.; Meisner, J.; Gostilo, V.; Ivanov, V.; Loupilov, A.; Sokolov, A.; Sipila, H.

    1999-01-01

    The promise of good energy and spatial resolution coupled with high efficiency and near-room-temperature operation has fuelled a large International effort to develop Cadmium-Zinc-Telluride (CdZnTe) for the hard-x-ray region. We present here preliminary results from our development of small-pixel imaging arrays fabricated on 5x5x1-mm and 5x5x2-mm spectroscopy and discriminator-grade material. Each array has 16 (4x4) 0.65-mm gold readout pads on a 0.75-mm pitch, with each pad connected to a discrete preamplifier via a pulse-welded gold wire. Each array is mounted on a 3-stage Peltier cooler and housed in an ion-pump-evacuated housing which also contains a hybrid micro-assembly for the 16 channels of electronics. We have investigated the energy resolution and approximate photopeak efficiency for each pixel at several energies and have used an ultra-fine beam x-ray generator to probe the performance at the pixel boundaries. Both arrays gave similar results, and at an optimum temperature of -20 C we achieved between 2 and 3% FWHM energy resolution at 60 keV and around 15% at 5.9 keV. We found that all the charge was contained within 1 pixel until very close to the pixels edge, where it would start to be shared with its neighbor. Even between pixels, all the charge would be appropriately shared with no apparently loss of efficiency or resolution. Full details of these measurements will be presented, together with their implications for future imaging-spectroscopy applications.

  8. Performance simulation and structure design of Binode CdZnTe gamma-ray detector

    International Nuclear Information System (INIS)

    A new electrode structure CdZnTe (Cadmium Zinc Telluride) detector named Binode CdZnTe has been pro- posed in this paper. Together with the softwares of MAXWELL, GEANT4, and ROOT, the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized. In order to improve its performance further, Compton scattering effect correction has been used. The simulation results demonstrate that with refined design and Compton scattering effect correction, Binode CdZnTe detectors is capable of achieving 3.92% FWHM at 122 keV, and 1.27% FWHM at 662 keV. Com- pared with other single-polarity (electron-only) detector configurations, Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution. (authors)

  9. CdZnTe detector for combined X-ray CT and SPECT

    International Nuclear Information System (INIS)

    A medical imaging system providing both X-ray transmission and radionuclide measurements would allow correlation of structural and functional information. We therefore are evaluating a pixellated CdZnTe detector for combined X-ray computed tomography (CT) and single photon emission computed tomography (SPECT) imaging. Gamma-ray spectra of 57Co measured using NIM electronics (2 μs shaping time) and multichannel fast photon-counting electronics (50 ns shaping time) produced energy resolutions of 6.5 keV FWHM and 17 keV FWHM, respectively, at 122 keV. Fast photon-counting electronics achieved linear X-ray count-rate response up to 4x105 cps in comparison to 1.5x108 cps achieved with digital readout electronics based on a variable rate ΣΔ ADC in current mode. Results suggest that the CdZnTe detector is capable of performing both X-ray CT and SPECT with the fast photon-counting electronics, and X-ray CT in current mode with the digital readout electronics

  10. Gamma spectrometric characterization of various CdTe and CdZnTe detectors

    CERN Document Server

    Arlt, R; Sumah, P

    1999-01-01

    CdZnTe and CdTe detectors are now used by the Department of Safeguards of the International Atomic Energy Agency in significant numbers. To prepare, plan and support various verification methods, their properties must be well characterized and understood. In this paper we present some of the results which were obtained with large volume hemispheric CdZnTe detectors and high-resolution CdTe detectors.

  11. CMOS Pixel Spectroscopic Circuits for Cd(ZnTe Gamma Ray Imagers

    Directory of Open Access Journals (Sweden)

    Hatzistratis D.

    2016-01-01

    Full Text Available A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays. One element of the sensor array consists of a pixilated single crystal of CdTe or CdZnTe semiconductor bump bonded to the CMOS electronic circuit. The first member of the family can process single photon signals which deliver up to 4fCb charge, while the two other can process signals up to 36fCb. A unique readout mode and the simultaneous extraction of energy and time tagging information of the converted photons differentiate the members of this family from other existing CMOS readout circuits.

  12. Status of the ATLAS pixel detector

    CERN Document Server

    Saavedra Aldo, F

    2005-01-01

    The ATLAS pixel detector is currently being constructed and will be installed in 2006 to be ready for commissioning at the Large Hadron Collider. The complete pixel detector is composed of three concentric barrels and six disks that are populated by 1744 ATLAS Pixel modules. The main components of the pixel module are the readout electronics and the silicon sensor whose active region is instrumented with rectangular pixels. The module has been designed to be able to survive 10 years of operation within the ATLAS detector. A brief description of the pixel detector will be presented with results and problems encountered during the production stage.

  13. Cooled CdZnTe detectors for X-ray astronomy

    CERN Document Server

    Bale, G; Seller, P; Lowe, B

    1999-01-01

    Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

  14. Performance of CdZnTe geometrically weighted semiconductor Frisch grid radiation detectors

    International Nuclear Information System (INIS)

    Semiconductor Frisch grid radiation detectors have been manufactured and tested with encouraging results. Resolution enhancement occurs as a result of combining the geometric weighting effect, the small pixel effect and the Frisch grid effect. The devices are operated at ambient temperature without any pulse shape correction, rejection and compensation techniques. The new devices are manufactured from CdZnTe and do not require any cooling for operation. The geometrically weighted detectors have only one signal output to a standard commercially available Ortec 142A preamplifier. The detectors operate with simple commercially available NIM electronics, hence the device design can be coupled to any typical NIM system without the need for special electronic instruments or circuits. Geometrically weighted detectors that are 1 cubic centimeter in volume were fabricated from counter grade material, yet have shown room temperature energy resolution of 7.5% FWHM (at 29 C) for 57Co 122 keV gamma rays and 2.68% FWHM (at 23 C) for 137Cs 662 keV gamma rays

  15. Physics-based generation of gamma-ray response functions for CDZNTE detectors

    International Nuclear Information System (INIS)

    A physics-based approach to gamma-ray response-function generation is presented in which the response of CdZnTe detectors is modeled from first principles. Computer modeling is used to generate response functions needed for spectrum analysis for general detector configurations (e.g., electrode design, detector materials and geometry, and operating conditions). With computer modeling, requirements for calibration and characterization are significantly reduced. Elements of the physics-based model, including gamma-ray transport, charge drift-diffusion, and circuit response, are presented. Calculated and experimental gamma-ray spectra are compared for a coplanar-grid CdZnTe detector

  16. The ALICE Silicon Pixel Detector System (SPD)

    CERN Document Server

    Kluge, A; Antinori, Federico; Burns, M; Cali, I A; Campbell, M; Caselle, M; Ceresa, S; Dima, R; Elias, D; Fabris, D; Krivda, Marian; Librizzi, F; Manzari, Vito; Morel, M; Moretto, Sandra; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato De Matos, C; Turrisi, R; Tydesjo, H; Viesti, G; PH-EP

    2007-01-01

    The ALICE silicon pixel detector (SPD) comprises the two innermost layers of the ALICE inner tracker system. The SPD includes 120 detector modules (half-staves) each consisting of 10 ALICE pixel chips bump bonded to two silicon sensors and one multi-chip read-out module. Each pixel chip contains 8192 active cells, so that the total number of pixel cells in the SPD is ≈ 107. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The constraints on material budget and detector module dimensions are very demanding.

  17. Operational experience of the ATLAS Pixel Detector

    CERN Document Server

    Marcisovsky, M; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  18. Operational experience of the ATLAS Pixel detector

    CERN Document Server

    Hirschbuehl, D; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  19. Performance of CdZnTe detectors passivated with energetic oxygen atoms

    International Nuclear Information System (INIS)

    Noise caused by surface-leakage current can degrade the performance of CdZnTe spectrometers, particularly devices with closely spaced contacts such as coplanar grid detectors. In order to reduce surface leakage, the authors are treating CdZnTe detector surfaces with energetic, neutral oxygen atoms. Energetic oxygen atoms react with the surface to form a resistive oxide layer. Because the reaction is effective at room temperature, deleterious heating of the substrate is avoided. In most cases, leakage current and noise are shown to decrease significantly after treatment. The effect of the treatment on the performance of coplanar grid detectors is presented

  20. Operational experience with the ATLAS Pixel Detector

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost element of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  1. CVD diamond pixel detectors for LHC experiments

    International Nuclear Information System (INIS)

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

  2. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  3. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  4. Performance updating of CdZnTe strip-drift detectors

    DEFF Research Database (Denmark)

    Shorohov, M.; Tsirkunova, I.; Loupilov, A.;

    2007-01-01

    Efficiency of strip-drift structure of contacts for improvement of charge collection conditions in CdZnTe detectors was shown some years ago. For such detector with area 10 x 10 mm(2) and thickness 3 mm of crystal, produced by eV products we obtained energy resolution 1.9 and 12.0 keV on energies...

  5. Performance of CdZnTe coplanar-grid gamma-ray detectors

    International Nuclear Information System (INIS)

    CdZnTe crystals grown using the high-pressure Bridgman method exhibit many properties that are desirable for radiation detector fabrication, such as high resistivity, stable operation, relative ease of processing, and the availability of large volume crystals. However, as is common with other compound semi-conductor materials, currently available CdZnTe crystals have poor charge transport characteristics. This seriously the spectral performance of detectors, especially in gamma-ray detection. The coplanar-grid detection technique was recently developed to address such charge collection problems. This technique was first demonstrated using a 5 mm cube CdZnTe detector, and a dramatic improvement in spectral response has been achieved. These early results verified the effectiveness of this technique and suggested that large-volume gamma-ray detectors with high energy resolution can be realized. To further the development of such detectors, it is important to understand the various factors that affect detector performance. The purpose of this paper is to examine the effects of material properties on the spectral performance of CdZnTe coplanar-grid detectors. Theoretical spectral response is to show the level of performance that can be achieved given the typical carrier mobility-lifetime (μτ) properties of present-day materials. Nonuniformity in the charge transport properties of the material, which could limit the energy resolution of the detectors, has been studied experimentally and some of the results are presented here

  6. Operational Experience with the ATLAS Pixel Detector

    CERN Document Server

    Lantzsch, Kerstin; The ATLAS collaboration

    2016-01-01

    Run 2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). In addition the Pixel detector was refurbished with new service quarter panels to recover about 3% of defective modules lost during run 1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning, operation and performance of the 4-layer Pixel Detector will be presented.

  7. Cooling Tests for the Silion Pixel Detectors

    CERN Document Server

    Pepato, Adriano; CERN. Geneva; Giarin, M; Antinori, Federico; Carrer, N; Morando, M; Soramel, F; Segato, G F; Turrisi, R; Scarlassara, F

    2000-01-01

    Abstract Cooling tests have been performed on dummy prototypes of the Silicon Pixel Detector ladders of the Inner Tracking System of ALICE, in order to assess the merits of the proposed cooling schemes. The tests provide insight into the problems of cooling of the pixel detectors and also yield experimental parameters necessary for a numerical simulation.

  8. Development of SOI pixel detector in Cracow

    OpenAIRE

    Bugiel, Szymon; Dasgupta, Roma; Glab, Sebastian; Idzik, Marek; Moron, Jakub; Kapusta, Piotr Julian; Kucewicz, Wojciech; Turala, Michal

    2015-01-01

    This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for t...

  9. TFA pixel sensor technology for vertex detectors

    OpenAIRE

    Jarron, P.; Moraes, D.; Despeisse, M.; Dissertori, G.; Dunand, S.; Kaplon. J.; Miazza, C.; Shah, Arvind; Viertel, G M.; Wyrsch, Nicolas

    2008-01-01

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS)...

  10. Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

    International Nuclear Information System (INIS)

    This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

  11. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  12. High performance p-i-n CdTe and CdZnTe detectors

    Science.gov (United States)

    Khusainov, A. Kh; Dudin, A. L.; Ilves, A. G.; Morozov, V. F.; Pustovoit, A. K.; Arlt, R. D.

    1999-06-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  13. Preliminary results obtained from novel CdZnTe pad detectors

    International Nuclear Information System (INIS)

    CdZnTe pad detectors with a novel geometry and approximately 1 mm2 pad sizes are being developed. These detectors have been specially designed for high energy resolution up to 300 keV energies. The contacts are produced through a unique technique developed by eV Products to achieve high reliability low resistance coupling to the substrate. A ceramic carrier is developed for low capacitance coupling of the detectors to NOVA's FEENA chip. The detectors have been tested using the ultra low noise single and 3-channel amplifiers developed by eV Products. The CdZnTe detectors are tested for dark current. The charge energy resolutions and collection times are also measured using natural radiation sources. The measured detector parameters and the test results are showing that linear pad arrays can have good uniformity and excellent application potential for imaging x-rays and gamma-rays

  14. Upgrades of the ATLAS Pixel Detector

    CERN Document Server

    Hügging, F; The ATLAS collaboration

    2013-01-01

    The upgrade for the ATLAS detector will undergo different phases towards HL-LHC. The first upgrade for the Pixel Detector (Phase 1) consists in the construction of a new pixel layer, which will be installed during the 1st long shutdown of the LHC machine (LS1) in 2013/14. The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of about 3.2 cm. The IBL requires the development of several new technologies to cope with the increase of radiation and pixel occupancy as well as to improve the physics performance of the existing pixel detector. The pixel size is reduced and the material budget is minimized by using new lightweight mechanical support materials and a CO2 based cooling system. For Phase 2 upgrade of LHC a complete new 4-layer pixel system is planned as part of a new all silicon Inner Detector. The increase in luminosity to about $5\\cdot 10^{34}$cm$^{-2}$s$^{-1}$ together with a total expected lifetime of ab...

  15. CdZnTe Frisch collar detectors for γ-ray spectroscopy

    International Nuclear Information System (INIS)

    Low-energy γ-ray spectra were collected from 241Am, 57Co, 133Ba, 198Au, 137Cs and 235U using a 3.4x3.4x5.7 mm3 CdZnTe detector utilizing an insulated Frisch ring. The CdZnTe detector was fabricated from a single crystal and a copper shim was used as the Frisch collar. Room-temperature energy resolution of 1.45% full-width half-maximum (FWHM) was obtained for 137Cs at 661.7 keV without electronic correction. The detector fabrication process is described and the resulting energy spectra are discussed. The detector fabrication process is described and the resulting energy spectra are discussed. The detector full-energy-peak intrinsic efficiency is reported for different γ-ray energies, specifically from 241Am, 57Co, 133Ba and 137Cs

  16. Development of SOI pixel detector in Cracow

    CERN Document Server

    Bugiel, Szymon; Glab, Sebastian; Idzik, Marek; Moron, Jakub; Kapusta, Piotr Julian; Kucewicz, Wojciech; Turala, Michal

    2015-01-01

    This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) is also presented. A 10-bit SAR ADC is developed for spectroscopic measurements and a lower resolution 6-bit SAR ADC is integrated in the pixel matrix as a column ADC, for tracking applications.

  17. Parallel encoders for pixel detectors

    International Nuclear Information System (INIS)

    A new method of fast encoding and determining the multiplicity and coordinates of fired pixels is described. A specific example construction of parallel encodes and MCC for n=49 and t=2 is given. 16 refs.; 6 figs.; 2 tabs

  18. Hybrid pixel detector development for medical radiography

    International Nuclear Information System (INIS)

    A 7-year project has been initiated to develop hybrid pixel detectors for medical radiography. Crystalline semiconductor will be bonded to a pixellated readout chip where individual integrated circuits process each event, transferring the position, energy and timing information to the data acquisition controller. Chips will be tiled to produce a large area detector, capable of energy dispersive photon counting at moderate spatial resolution. Preliminary results from studies examining the design features and operation of the device are presented

  19. Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector

    International Nuclear Information System (INIS)

    A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an IR sensitive photodiode. Calibrations of reactor pulses were performed using the CdZnTe Pockels cell by measuring the change in the photodiode current, repeated 10 times for each set of reactor pulses, set between 1.00 and 2.50 dollars in 0.50 increments of reactivity. - Highlights: ► We demonstrated the first use of an electro-optic device to trace reactor pulses in real-time. ► We examined the changes in photodiode current for different reactivity insertions. ► Created a linear best fit line from the data set to predict peak pulse powers.

  20. Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Kyle A., E-mail: knelson1@ksu.edu [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Geuther, Jeffrey A. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Neihart, James L.; Riedel, Todd A. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Rojeski, Ronald A. [Nanometrics, Inc., 1550 Buckeye Drive, Milpitas, CA 95035 (United States); Saddler, Jeffrey L. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Schmidt, Aaron J.; McGregor, Douglas S. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)

    2012-07-15

    A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an IR sensitive photodiode. Calibrations of reactor pulses were performed using the CdZnTe Pockels cell by measuring the change in the photodiode current, repeated 10 times for each set of reactor pulses, set between 1.00 and 2.50 dollars in 0.50 increments of reactivity. - Highlights: Black-Right-Pointing-Pointer We demonstrated the first use of an electro-optic device to trace reactor pulses in real-time. Black-Right-Pointing-Pointer We examined the changes in photodiode current for different reactivity insertions. Black-Right-Pointing-Pointer Created a linear best fit line from the data set to predict peak pulse powers.

  1. Overview of the CMS Pixel Detector

    CERN Document Server

    Cerati, Giuseppe B

    2008-01-01

    The Compact Muon Solenoid Experiment (CMS) will start taking data at the Large Hadron Collider (LHC) in 2009. It will investigate the proton-proton collisions at $14~TeV$. A robust tracking combined with a precise vertex reconstruction is crucial to address the physics challenge of proton collisions at this energy. To this extent an all-silicon tracking system with very fine granularity has been built and now is in the final commissioning phase. It represents the largest silicon tracking detector ever built. The system is composed by an outer part, made of micro-strip detectors, and an inner one, made of pixel detectors. The pixel detector consists of three pixel barrel layers and two forward disks at each side of the interaction region. Each pixel sensor, both for the barrel and forward detectors, has $100 \\times 150$ $\\mu m^2$ cells for a total of 66 million pixels covering a total area of about $1~m^2$. The pixel detector will play a crucial role in the pattern recognition and the track reconstruction both...

  2. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Science.gov (United States)

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  3. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    International Nuclear Information System (INIS)

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  4. Pixel Hit Reconstruction with the CMS Detector

    CERN Document Server

    Giurgiu, Gavril; Maksimovic, P; Swartz, M

    2008-01-01

    We present a new technique for pixel hit reconstruction with the CMS pixel detector. The technique is based on fitting the pixel cluster projections to templates obtained using a detailed simulation called Pixelav. Pixelav successfully describes the profiles of clusters measured in beam tests of radiation-damaged sensors. Originally developed to optimally estimate the coordinates of hits after the radiation damage, the technique has superior performance before irradiation as well, reducing the resolution tails of reconstructed track parameters and significantly reducing the light quark background of tagged b-quarks. It is the only technique currently available to simulate hits from a radiation-damaged detector.

  5. Pixel detectors from fundamentals to applications

    CERN Document Server

    Rossi, Leonardo; Rohe, Tilman; Wermes, Norbert

    2006-01-01

    Pixel detectors are a particularly important class of particle and radiation detection devices. They have an extremely broad spectrum of applications, ranging from high-energy physics to the photo cameras of everyday life. This book is a general purpose introduction into the fundamental principles of pixel detector technology and semiconductor-based hybrid pixel devices. Although these devices were developed for high-energy ionizing particles and radiation beyond visible light, they are finding new applications in many other areas. This book will therefore benefit all scientists and engineers working in any laboratory involved in developing or using particle detection.

  6. A gamma-ray Detector System for Tomography with CdZnTe Detector

    International Nuclear Information System (INIS)

    A compact low noise multi-flow detector system for gamma-ray tomography matched to small size CdZnTe detectors has been developed, the system comprises five 241Am gamma-ray sources at a principal energy of 59.5keV, mounted around a PVC pipe structure., the DAQ system based FPGA technique transmits the data acquired by linear array to up-PC, and then the data can be processed to reconstruct the image of the measurement volume, the test result shows the each channel's total noise of multi-flow tomography system is about 8.9keV FWHM, and its count rate capability is about 90 kcps. (authors)

  7. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  8. Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

    CERN Document Server

    Luke, P N; Lee Jae Sik; Yaver, H

    2000-01-01

    A three-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.

  9. Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

    International Nuclear Information System (INIS)

    A 3-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented

  10. Preliminary test of an imaging probe for nuclear medicine using hybrid pixel detectors

    International Nuclear Information System (INIS)

    We are investigating the feasibility of an intraoperative imaging probe for lymphoscintigraphy with Tc-99m tracer, for sentinel node radioguided surgery, using the Medipix series of hybrid detectors coupled to a collimator. These detectors are pixelated semiconductor detectors bump-bonded to the Medipix1 photon counting read-out chip (64x64 pixel, 170 μm pitch) or to the Medipix2 chip (256x256 pixel, 55 μm pitch), developed by the European Medipix collaboration. The pixel detector we plan to use in the final version of the probe is a semi-insulating GaAs detector or a 1-2 mm thick CdZnTe detector. For the preliminary tests presented here, we used 300-μm thick silicon detectors, hybridized via bump-bonding to the Medipix1 chip. We used a tungsten parallel-hole collimator (7 mm thick, matrix array of 64x64 100 μm circular holes with 170 μm pitch), and a 22, 60 and 122 keV point-like (1 mm diameter) radioactive sources, placed at various distances from the detector. These tests were conducted in order to investigate the general feasibility of this imaging probe and its resolving power. Measurements show the high resolution but low efficiency performance of the detector-collimator set, which is able to image the 122 keV source with <1 mm FWHM resolution

  11. Fabrication of virtual frisch-grid CdZnTe γ-ray detector

    International Nuclear Information System (INIS)

    Large volume of 6 X 6 X 12 mm3 CdZnTe γ-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in 137Cs. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV γ-peak of 137Cs with virtual Frisch-grid CdZnTe detector

  12. Fabrication of virtual frisch-grid CdZnTe γ-ray detector

    Energy Technology Data Exchange (ETDEWEB)

    Park, Chan Sun; Choi, Jong Hak; Kim, Jung Min; Kim, Ki Hyun [Dept. of Radiologic Science, Korea University, Seoul (Korea, Republic of); Cho, Pyong Kon [Dept. of Radiological Science, Catholic University of Daegu, Daegu (Korea, Republic of)

    2014-12-15

    Large volume of 6 X 6 X 12 mm{sup 3} CdZnTe γ-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in {sup 137}Cs. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV γ-peak of {sup 137}Cs with virtual Frisch-grid CdZnTe detector.

  13. De-polarization of a CdZnTe radiation detector by pulsed infrared light

    International Nuclear Information System (INIS)

    This work is focused on a detailed study of pulsed mode infrared light induced depolarization of CdZnTe detectors operating at high photon fluxes. This depolarizing effect is a result of the decrease of positive space charge that is caused by the trapping of photogenerated holes at a deep level. The reduction in positive space charge is due to the optical transition of electrons from a valence band to the deep level due to additional infrared illumination. In this paper, we present the results of pulse mode infrared depolarization, by which it is possible to keep the detector in the depolarized state during its operation. The demonstrated mechanism represents a promising way to increase the charge collection efficiency of CdZnTe X-ray detectors operating at high photon fluxes

  14. Application of pulse-shape discrimination to coplanar CdZnTe detectors

    Science.gov (United States)

    Nakhostin, M.; Podolyak, Zs.; Sellin, P. J.

    2013-11-01

    A digital pulse-shape discrimination algorithm for the identification of multi-site γ-ray interactions in coplanar CdZnTe detectors has been developed. The algorithm is used to suppress the Compton continuum in γ-ray spectroscopy measurements by rejecting the single-site events. The results of our study with a 15×15×7.5 mm3 detector demonstrate the effectiveness of this approach for revealing low intensity γ-ray peaks in the examined energy range (511-1274 keV), which is of importance for environmental and security applications. The method is also very useful for background reduction in the neutrinoless double beta-decay experiments for which coplanar CdZnTe detectors are of interest.

  15. Development of CDZNTE Detectors for Low-Energy Gamma-Ray Astronomy

    Science.gov (United States)

    Gehrels, N.

    1999-01-01

    Under this grant the UC Berkeley PI, K. Hurley, joined a Goddard-led effort to develop large area, multi-pixel Cadmium-Zinc-Telluride (CdZnTe, or CZT) detectors for gamma-ray astronomy. His task was to advise the project of new developments in the area of cosmic gamma-ray bursts, in order to focus the detector development effort on the construction of an instrument which could be deployed on a spacecraft to localize and measure the energy spectra of bursts with good angular and energy resolution, respectively. UC Berkeley had no hardware role in this proposal. The result of this effort was the production, at Goddard, of five CZT prototype modules. A proposal was written for SWIFT, a MIDEX mission to study cosmic gamma-ray bursts. One experiment aboard SWIFT is the Burst Arcminute Telescope (BAT), which consists of a 5200 sq cm hard X-ray detector and a coded mask. The detector comprises 256 CZT modules, each containing 128 4 x 4 x 2 mm CZT detectors. Each detector is read out using an ASIC. The angular resolution achieved with this mask/array combination is 22 arcminutes, and a strong gamma-ray burst can be localized to an accuracy of 4 arcminutes in under 10 seconds. The energy resolution is typically 5 keV FWHM at 60 keV, and the energy range is 10 - 150 keV. The BAT views 2 steradians, and its sensitivity is such that the instrument can detect 350 gamma-ray burst/year, localizing 320 of them to better than 4 arcminute accuracy. The BAT concept therefore met the science goals for gamma-ray bursts. The UCB effort in the SWIFT proposal included the scientific objectives for gamma-ray bursts, and the assembly of a team of optical and radio observers who would use the BAT data to perform rapid multi-wavelength searches for the counterparts to bursts. This proposal was submitted to NASA and peer-reviewed. In January 1999 it was one of five such proposals selected for a Phase A study. This study was completed in June, and SWIFT was formally presented to NASA in

  16. CdZnTe semiconductor parallel strip Frisch grid radiation detectors

    International Nuclear Information System (INIS)

    CdZnTe wide band gap compound semiconducting material offers promise as a room temperature operated gamma ray spectrometer. Position-dependent free charge carrier losses during transport can prevent efficient charge carrier extraction from semiconductor detectors and severely reduce energy resolution. Hole trapping losses in CdZnTe radiation detectors are far worse than electron trapping losses and resolution degradation in CdZnTe detectors results primarily from severe hole trapping during transport. Coplanar radiation detectors improved energy resolution by sensing the induced charge primarily from the motion of electrons. Demonstrated is an alternative approach to single free charge carrier sensing, in which a parallel strip Frisch grid is fabricated on either side of a parallelepiped block. The detectors are three terminal devices, but require only one preamplifier for the output signal. The prototype devices demonstrate a considerable increase in energy resolution when operated in the true Frisch grid mode rather than the planar mode, with a demonstrated room temperature energy resolution for 662 keV gamma rays of 5.91 % at FWHM for a 10 mm x 2 mm x 10 mm device. Presently, high surface leakage currents prevent large voltages from being applied to the devices, which ultimately reduces their maximum achievable energy resolution. Further improvements are expected with the realization of reduced surface leakage currents

  17. Preliminary test of an imaging probe for nuclear medicine using hybrid pixel detectors

    CERN Document Server

    Bertolucci, Ennio; Mettivier, G; Montesi, M C; Russo, P

    2002-01-01

    We are investigating the feasibility of an intraoperative imaging probe for lymphoscintigraphy with Tc-99m tracer, for sentinel node radioguided surgery, using the Medipix series of hybrid detectors coupled to a collimator. These detectors are pixelated semiconductor detectors bump-bonded to the Medipix1 photon counting read-out chip (64x64 pixel, 170 mu m pitch) or to the Medipix2 chip (256x256 pixel, 55 mu m pitch), developed by the European Medipix collaboration. The pixel detector we plan to use in the final version of the probe is a semi-insulating GaAs detector or a 1-2 mm thick CdZnTe detector. For the preliminary tests presented here, we used 300-mu m thick silicon detectors, hybridized via bump-bonding to the Medipix1 chip. We used a tungsten parallel-hole collimator (7 mm thick, matrix array of 64x64 100 mu m circular holes with 170 mu m pitch), and a 22, 60 and 122 keV point-like (1 mm diameter) radioactive sources, placed at various distances from the detector. These tests were conducted in order ...

  18. ATLAS Inner Detector (Pixel Detector and Silicon Tracker)

    CERN Multimedia

    ATLAS Outreach

    2006-01-01

    To raise awareness of the basic functions of the Pixel Detector and Silicon Tracker in the ATLAS detector on the LHC at CERN. This colorful 3D animation is an excerpt from the film "ATLAS-Episode II, The Particles Strike Back." Shot with a bug's eye view of the inside of the detector. The viewer is taken on a tour of the inner workings of the detector, seeing critical pieces of the detector and hearing short explanations of how each works.

  19. Application of CdTe (CdZnTe) detectors for radioactive waste characterization

    CERN Document Server

    Dovbnya, N A; Kutny, V E

    2002-01-01

    The radiation detectors based on wide-zone semiconductor CdTe (CdZnTe) monocrystals have promising advantages for their application in investigation (characterization) of radioactive waste. Among these advantages there are the wide range of photons flux and energy, high registration efficiency and satisfactory energy resolution without deep cooling of the detector. This report discusses the obtained data concerning radiation stability of detectors, influence of different conditions (filters, collimators, registration channel fill etc.) on their energy resolution in spectrometric regime, as well as a dependence of radionuclide identification accuracy on detector size.

  20. Development of CdZnTe X-ray detectors at DSRI

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    An overview of the development of CdZnTe X-ray detectors at the Danish Space Research Institute is presented. Initiated in the beginning of 1996, the main motivation at that time was to develop focal plane detectors for the novel type of hard X-ray telescopes, which are currently under study at...... DSRI. With the advent of the Danish Micro Satellite program it was, however, recognised that this type of detector is very well suited for two proposed missions (eXCALIBur, AXO). The research at DSRI has so far been concentrated on the spectroscopic properties of the CZT detector. At DSRI we have...

  1. Comparison of CdZnTe detectors for use in hand-held isotope identifiers

    International Nuclear Information System (INIS)

    Room temperature semiconductor detectors, especially CdTe and CdZnTe detectors, play an increasing role in the design of portable and miniature radiation detection systems. In the last decade illicit trafficking in nuclear and radioactive materials at borders has increased. To provide on-site decision support to law enforcement and customs officers, hand-held isotope identifiers are needed. These instruments are operated by personal with little or no background in gamma spectroscopy. They must allow reliable isotope identification under field conditions with a measurement and processing time not exceeding more than 5-10 minutes. So far scintillation detectors mainly based on NaI crystals were used in hand-held identifiers. CdZnTe detectors are an alternative detector option which has a number of advantages (better linearity, resolution and stability), but a lower sensitivity compared to NaI detectors. In this work 3 types of large volume CdZnTe detectors are analysed and evaluated which are potential candidates for use in a hand-held isotope identification device, e.g., used in conjunction with scintillation detectors. In the first part of the report a comparison of essential detector parameters is performed. The second part describes the recording of gamma spectra under well defined conditions. The dose rate for all measurements was 500 nSv/h above background at the location of the detector. The spectrum of each isotope, shielded isotope or isotope mixture was recorded in fixed time steps. A data set of spectra for all measured isotopes with all detectors was produced and used to compare the results with respect to isotope identification, using the measurement time needed to identify a certain isotope as the main criterion. The procedure of identification tests with two different identification programmes is given in the third part. (author)

  2. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    Energy Technology Data Exchange (ETDEWEB)

    Zumbiehl, A. E-mail: zumbiehl@phase.c-strasbourg.fr; Hage-Ali, M.; Fougeres, P.; Koebel, J.M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P

    2001-08-11

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a 'pseudo-Monte Carlo' simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios (W/L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  3. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    Science.gov (United States)

    Zumbiehl, A.; Hage-Ali, M.; Fougeres, P.; Koebel, J. M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P.

    2001-08-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a "pseudo-Monte Carlo" simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios ( W/ L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  4. Proceedings of PIXEL98 -- International pixel detector workshop

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, D.F.; Kwan, S. [eds.

    1998-08-01

    Experiments around the globe face new challenges of more precision in the face of higher interaction rates, greater track densities, and higher radiation doses, as they look for rarer and rarer processes, leading many to incorporate pixelated solid-state detectors into their plans. The highest-readout rate devices require new technologies for implementation. This workshop reviewed recent, significant progress in meeting these technical challenges. Participants presented many new results; many of them from the weeks--even days--just before the workshop. Brand new at this workshop were results on cryogenic operation of radiation-damaged silicon detectors (dubbed the Lazarus effect). Other new work included a diamond sensor with 280-micron collection distance; new results on breakdown in p-type silicon detectors; testing of the latest versions of read-out chip and interconnection designs; and the radiation hardness of deep-submicron processes.

  5. Fabrication and optimisation of room temperature CdZnTe radiation detectors

    CERN Document Server

    Hossain, M A

    2002-01-01

    The ternary compound Cadmium Zinc Telluride (CdZnTe) is one of the most promising room-temperature semiconductor detectors. It possesses the necessary material properties that are required to exhibit optimal detection performance. But unfortunately it does not display that expected level of performance because it has some shortcomings at various stages from crystal growth to contact fabrication. Investigations in each area have been pursued individually over the last decades and it is a goal in the field to integrate the optimal properties from each area into a fully optimised detector. In this work, the metal contacts to CdZnTe detectors have been investigated since these are believed to be one of the most vital areas among the possible detrimental aspects. In order to evaluate the contact features, different configurations of contact were fabricated on the supplied CdZnTe detector crystals using the available laboratory facilities. A great deal of effort was put into contact design and fabrication as well a...

  6. Development of a CMOS SOI pixel detector

    CERN Document Server

    Ishino, Hirokazu; Hazumi, M; Ikegami, Y; Kohriki, T; Tajima, O; Terada, S; Tsuboyama, T; Unno, Y; Ushiroda, Y; Ikeda, H; Hara, K; Ishino, H; Kawasaki, T; Miyake, H; Martin, E; Varner, G; Tajima, H; Ohno, M; Fukuda, K; Komatsubara, H; Ida, J

    2007-01-01

    We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 m fullydepleted- SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5mm2 consisting of 20 x 20 um2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a . ray radioactive source indicate successful operation of the detector. We also brie y discuss the back gate effect as well as the simulation study.

  7. Commissioning of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  8. Commissioning the CMS pixel detector with Cosmic Rays

    CERN Document Server

    Heyburn, Bernadette

    2009-01-01

    commissioning activities in the CMS pixel detector. Results from cosmic ray studies will be presented, in addition to results obtained from the integration of the pixel detector within the CMS detector and various calibration and alignment analyses.

  9. Response Calculations of the CdZnTe Detector Using EGS4

    Energy Technology Data Exchange (ETDEWEB)

    Liu, James C

    2000-09-08

    The spectral response of a CdZnTe semiconductor detector has been calculated with the EGS4 Code System. The latest low-energy photon production and transport routines developed at KEK, which consider the K and L shell fluorescent photon production in compounds, bound Compton scattering, Doppler broadening, etc., were included in the EGS4 code. The calculations of the CdZnTe detector also took into account the collection efficiency of the produced electron-hole pairs (described by Hecht equation) and the modification on spectral peaks due to both the Fano factor and electronic-noise broadening. The calculated results are compared with measurements made with encapsulated {sup 241}Am and {sup 137}Cs disk sources. It was found that, by trying various mobility-lifetime values for holes, the calculated spectral response still did not have perfect agreement with measurements.

  10. Response calculations of the CdZnTe detector using EGS4

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J.C.; Nelson, W.R.; Seefred, R. [Stanford Linear Accelerator Center, Stanford, CA (United States)

    2000-12-01

    The spectral response of a CdZnTe semiconductor detector has been calculated with the EGS4 Code System. The latest low-energy photon production and transport routines developed at KEK, which consider the K and L shell fluorescent photon production in compounds, bound Compton scattering, Doppler broadening, etc., were included in the EGS4 code. The calculations of the CdZnTe detector also took into account the collection efficiency of the produced electron-hole pairs (described by Hecht equation) and the modification on spectral peaks due to both the Fano factor and electronic-noise broadening. The calculated results are compared with measurements made with encapsulated {sup 241}Am and {sup 137}Cs disk sources. It was found that, by trying various mobility-lifetime values for holes, the calculated spectral response still did not have perfect agreement with measurements. (author)

  11. Prototype gamma-camera system with CdZnTe semiconductor detectors

    International Nuclear Information System (INIS)

    The CdZnTe semiconductor detector, which works at room temperature, may lead to the development of next-generation gamma-camera systems due to its high spatial resolution and high energy resolution. We fabricated a prototype gamma-camera system with CdZnTe detectors to evaluate the feasibility of such a semiconductor gamma-camera. An energy resolution of 7.35% full width half maximum (FWHM) (at 140 keV) and an intrinsic spatial resolution of 1.8 mm FWHM were achieved. Single photon emission computed tomography (SPECT) images acquired using this gamma-camera system showed that the system can resolve hot and cold rods with a diameter of 3 mm. (author)

  12. Characterization of a large CdZnTe coplanar quad-grid semiconductor detector

    CERN Document Server

    Ebert, Joachim; Gehre, Daniel; Hagner, Caren; Heidrich, Nadine; Klingenberg, Rainer; Kröninger, Kevin; Nitsch, Christian; Oldorf, Christian; Quante, Thomas; Rajek, Silke; Rebber, Henning; Rohatsch, Katja; Tebrügge, Jan; Temminghoff, Robert; Theinert, Robert; Timm, Jan; Wonsak, Björn; Zatschler, Stefan; Zuber, Kai

    2015-01-01

    The COBRA collaboration aims to search for neutrinoless double beta-decay of $^{116}$Cd. A demonstrator setup with 64 CdZnTe semiconductor detectors, each with a volume of 1cm$^3$, is currently being operated at the LNGS underground laboratory in Italy. This paper reports on the characterization of a large (2 $\\times$ 2 $\\times$ 1.5)cm$^3$ CdZnTe detector with a new coplanar-grid design for applications in $\\gamma$-ray spectroscopy and low-background operation. Several studies of electric properties as well as of the spectrometric performance, like energy response and resolution, are conducted. Furthermore, measurements including investigating the operational stability and a possibility to identify multiple-scattered photons are presented.

  13. The ALICE silicon pixel detector readout electronics

    CERN Document Server

    Krivda, M; Burns, M; Caselle, M; Kluge, A; Manzari, V; Torcato de Matos, C; Morel, M; Riedler, P; Aglieri Rinella, G; Sandor, L; Stefanini, G

    2010-01-01

    The ALICE silicon pixel detector (SPD) constitutes the two innermost layers of the ALICE inner tracking system (ALICE Collaboration, 1999) [1]. The SPD is built with 120 detector modules (half-staves) and contains about 10 million pixels in total. The half-staves are connected to the off-detector electronics, housed in a control room 100 m away, via bidirectional optical links. The stream of data from the front-end electronics is processed in 20 VME readout modules, called routers, based on FPGAs. Three 2-channel link-receiver daughter cards, also based on FPGAs, are plugged in each router. Each link-receiver card receives data via the optical link from two half-staves, applies the zero suppression and passes them to the router to be processed and sent to the ALICE–DAQ system through the detector data link (DDL). The SPD control, configuration and data monitoring are performed using the VME interface embedded in the router.

  14. The ALICE silicon pixel detector readout electronics

    International Nuclear Information System (INIS)

    The ALICE silicon pixel detector (SPD) constitutes the two innermost layers of the ALICE inner tracking system (ALICE Collaboration, 1999) . The SPD is built with 120 detector modules (half-staves) and contains about 10 million pixels in total. The half-staves are connected to the off-detector electronics, housed in a control room 100 m away, via bidirectional optical links. The stream of data from the front-end electronics is processed in 20 VME readout modules, called routers, based on FPGAs. Three 2-channel link-receiver daughter cards, also based on FPGAs, are plugged in each router. Each link-receiver card receives data via the optical link from two half-staves, applies the zero suppression and passes them to the router to be processed and sent to the ALICE-DAQ system through the detector data link (DDL). The SPD control, configuration and data monitoring are performed using the VME interface embedded in the router.

  15. Charge sharing in silicon pixel detectors

    CERN Document Server

    Mathieson, K; Seller, P; Prydderch, M L; O'Shea, V; Bates, R L; Smith, K M; Rahman, M

    2002-01-01

    We used a pixellated hybrid silicon X-ray detector to study the effect of the sharing of generated charge between neighbouring pixels over a range of incident X-ray energies, 13-36 keV. The system is a room temperature, energy resolving detector with a Gaussian FWHM of 265 eV at 5.9 keV. Each pixel is 300 mu m square, 300 mu m deep and is bump bonded to matching read out electronics. The modelling packages MEDICI and MCNP were used to model the complete X-ray interaction and the subsequent charge transport. Using this software a model is developed which reproduces well the experimental results. The simulations are then altered to explore smaller pixel sizes and different X-ray energies. Charge sharing was observed experimentally to be 2% at 13 keV rising to 4.5% at 36 keV, for an energy threshold of 4 keV. The models predict that up to 50% of charge may be lost to the neighbouring pixels, for an X-ray energy of 36 keV, when the pixel size is reduced to 55 mu m.

  16. Commissioning of the ATLAS Pixel Detector

    OpenAIRE

    Golling, Tobias; ATLAS Collaboration

    2008-01-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and su...

  17. Optical Link of the Atlas Pixel Detector

    OpenAIRE

    Gan, K. K.

    2007-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the irradiation studies with 24 GeV protons up to 32 Mrad (1.2 x 10^15 p/cm^2) and the experience from the production.

  18. Electrical characteristics of silicon pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gorelov, I.; Gorfine, G.; Hoeferkamp, M.; Mata-Bruni, V.; Santistevan, G.; Seidel, S.C. E-mail: seidel@dot.phys.unm.edu; Ciocio, A.; Einsweiler, K.; Emes, J.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Marchesini, R.; McCormack, F.; Milgrome, O.; Palaio, N.; Pengg, F.; Richardson, J.; Zizka, G.; Ackers, M.; Comes, G.; Fischer, P.; Keil, M.; Martinez, G.; Peric, I.; Runolfsson, O.; Stockmanns, T.; Treis, J.; Wermes, N.; Goessling, C.; Huegging, F.; Klaiber-Lodewigs, J.; Krasel, O.; Wuestenfeld, J.; Wunstorf, R.; Barberis, D.; Beccherle, R.; Caso, C.; Cervetto, M.; Darbo, G.; Gagliardi, G.; Gemme, C.; Morettini, P.; Netchaeva, P.; Osculati, B.; Rossi, L.; Charles, E.; Fasching, D.; Blanquart, L.; Breugnon, P.; Calvet, D.; Clemens, J.-C.; Delpierre, P.; Hallewell, G.; Laugier, D.; Mouthuy, T.; Rozanov, A.; Valin, I.; Andreazza, A.; Caccia, M.; Citterio, M.; Lari, T.; Meroni, C.; Ragusa, F.; Troncon, C.; Vegni, G.; Lutz, G.; Richter, R.H.; Rohe, T.; Boyd, G.R.; Skubic, P.L.; Sicho, P.; Tomasek, L.; Vrba, V.; Holder, M.; Ziolkowski, M.; Cauz, D.; Cobal-Grassmann, M.; D' Auria, S.; De Lotto, B.; Del Papa, C.; Grassmann, H.; Santi, L.; Becks, K.H.; Lenzen, G.; Linder, C

    2002-08-21

    Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

  19. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  20. READOUT SYSTEM FOR ARRAYS OF FRISCH-RING CdZnTe DETECTORS

    International Nuclear Information System (INIS)

    Frisch-ring CdZnTe detectors have demonstrated good energy resolution for identifying isotopes, 3 Frisch-ring detectors, coupled with a readout electronics system. It supports 64 readout channels, and includes front-end electronics, signal processing circuit, USB interface and high-voltage power supply. The data-acquisition software is used to process the data stream, which includes amplitude and timing information for each detected event. This paper describes the design and assembly of the detector modules, readout electronics, and a conceptual prototype system. Some test results are also reported

  1. TFA pixel sensor technology for vertex detectors

    Energy Technology Data Exchange (ETDEWEB)

    Jarron, P. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: Pierre.Jarron@cern.ch; Moraes, D. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: Danielle.Moraes@cern.ch; Despeisse, M. [CERN, CH-1211 Geneva 23 (Switzerland); Dissertori, G. [ETH-Zurich, CH-8093 Zurich (Switzerland); Dunand, S. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Kaplon, J. [CERN, CH-1211 Geneva 23 (Switzerland); Miazza, C. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Shah, A. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland); Viertel, G.M. [ETH-Zurich, CH-8093 Zurich (Switzerland); Wyrsch, N. [IMT, Rue A.-L. Breguet 2, CH-2000 Neuchatel (Switzerland)

    2006-05-01

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5x10{sup 15} p/cm{sup 2}.

  2. TFA pixel sensor technology for vertex detectors

    International Nuclear Information System (INIS)

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5x1015 p/cm2

  3. Development of silicon micropattern pixel detectors

    International Nuclear Information System (INIS)

    Successive versions of high speed, active silicon pixel detectors with integrated readout electronics have been developed for particle physics experiments using monolithic and hybrid technologies. Various matrices with binary output as well as a linear detector with analog output have been made. The hybrid binary matrix with 1024 cells (dimension 75 μmx500 μm) can capture events at similar 5 MHz and a selected event can then be read out in 109Cd source a noise level of 170 e-r.m.s. (1.4 keV fwhm) has been measured with a threshold non-uniformity of 750 e- r.m.s. Objectives of the development work are the increase of the size of detecting area without loss of efficiency, the design of an appropriate readout architecture for collider operation, the reduction of material thickness in the detector, understanding of the threshold non-uniformity, study of the sensitivity of the pixel matrices to light and low energy electrons for scintillating fiber detector readout and last but not least, the optimization of cost and yield of the pixel detectors in production. ((orig.))

  4. The research of package for CdZnTe detector based on the capacitive Frisch grid structure

    Science.gov (United States)

    Qin, Kai-feng; Wang, Lin-jun; Min, Jia-hua; Teng, Jianyong; Shi, Zhu-bin; Zhou, Chen-ying; Zhang, Ji-jun; Huang, Jian; Xia, Yiben

    2009-07-01

    In this paper, the design and fabrication of a capacitive Frisch grid structure for CdZnTe (CZT) detector were investigated. The aging tests were first used to investigate the degradation of the mechanical and electrical characteristics of the CdZnTe detector based on the capacitive frisch grid structure. The effects of the degradation on the performance of CdZnTe detectors were investigated by scanning acoustic microscopy (SAM) test, current-voltage test, and multichannel pulse-height spectrum analysis. In particular, a passivation layer obtained by a two-step passivation processing, combined with a Teflon tape, was used as an insulated layer of the capacitive Frisch grid detector, improving its stability effectively at high voltages. However, further improvements in material and device fabrication (including insulated layer) were required to realize the potential of CZT detectors with the capacitive Frisch grid structure.

  5. Research of CdZnTe detector based portable energy dispersive spectrometer

    International Nuclear Information System (INIS)

    A kind of excellent CdZnTe crystal has been grown in Yinnel Tech. Inc. in recent years. Based on these CdZnTe crystals and some new techniques, a portable energy-dispersive spectrometer has been constructed which has yielded good results. CdZnTe detector has a 3% relative resolution in high-energy field and can detect gamma rays at room temperature. An integrated circuit based on preamplifier and shaping amplifier chips is connected to the detector. Voltage pulses are transformed into digital signals in MCA (multichannel analyzer) and are then transmitted to computer via USB bus. Data process algorithms are improved in this spectrometer. Fast Fourier transform (FFT) and numerical differentiation (ND) are used in energy peak's searching program. Sampling-based correction technique is used in X-ray energy calibration. Modified Gaussian-Newton algorithm is a classical method to solve nonlinear curve fitting problems, and it is used to compute absolute intensity of each detected characteristic line. (authors)

  6. Research of CdZnTe detector based portable energy dispersive spectrometer

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A kind of excellent CdZnTe crystal has been grown in Yinnel Tech, Inc. in recent years. Based on these CdZnTe crystals and some new techniques, a portable energy-dispersive spectrometer has been constructed which has yielded good results. CdZnTe detector has a 3% relative resolution in high-energy field and can detect gamma rays at room temperature. An integrated circuit based on preamplifier and shaping amplifier chips is connected to the detector.Voltage pulses are transformed into digital signals in MCA (multichannel analyzer) and are then transmitted to computer via USB bus. Data process algorithms are improved in this spectrometer. Fast Fourier transform (FFT) and numerical differentiation (ND) are used in energy peak's searching program. Sampling-based correction technique is used in X-ray energy calibration. Modified Gaussian-Newton algorithm is a classical method to solve nonlinear curve fitting problems, and it is used to compute absolute intensity of each detected characteristic line.

  7. A DC-coupling area-efficiency readout circuit for CdZnTe detectors

    International Nuclear Information System (INIS)

    In this paper, a DC-coupling readout circuit is presented in order to readout the signal from CdZnTe detectors. A differential stage is added in CSA to compensate the leakage current introduced by the CdZnTe crystal. A compact shaper is designed to achieve low area with wide range of adjustable peaking time from 3 μ s to 10 μ s. The area of proposed circuit is about 130 μ m × 1100 μ m. The experimental results show that the ENC is 70 e− + 14 e−/pF and the gain is about 152 mV/fC at the peaking time of 4 μ s

  8. SOIKID, SOI pixel detector combined with superconducting detector KID

    CERN Document Server

    Ishino, Hirokazu; Kida, Yosuke; Yamada, Yousuke

    2015-01-01

    We present the development status of the SOIKID, a detector combining the SOI pixel detector and the superconducting detector KID (Kinetic Inductance Detector). The aim of the SOIKID is to measure X-ray photon energy with the resolution better than that of the semiconductor detector. The silicon substrate is used as the X-ray photon absorber. The recoiled electron creates athermal phonons as well as the ionizing electron-hole pairs. The KID formed at one side of the substrate surface detects the phonons to measure the total energy deposited, while the SOI pixel detector formed on the other side of the substrate detects the ionized carries to measure the position. Combining the position and energy measurements, it is in principle possible to have the extremely high energy resolution.

  9. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  10. Noise reduction in CdZnTe coplanar-grid detectors

    Energy Technology Data Exchange (ETDEWEB)

    Luke, Paul N.; Lee, Julie S.; Amman, Mark; Yu, Kin M.

    2001-11-15

    Noise measurements on CdZnTe detectors show that the main sources of detector-related noise are shot noise due to bulk leakage current and 1/f noise due to the detector surfaces. The magnitude of surface leakage current appears to have little or no effect on the detector noise. Measurements on guard-ring devices fabricated using gold-evaporated contacts show that the contacts behave as Schottky barriers, and the bulk current at typical operating voltages is likely dependent on the contact properties rather than directly on the material's bulk resistivity. This also suggests that the level of shot noise is affected by the detector contacts and not necessarily by the material's bulk resistivity. A significant reduction in the noise of coplanar-grid detectors has been obtained using a modified contact fabrication process.

  11. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    CERN Document Server

    Zumbiehl, A; Fougeres, P; Koebel, J M; Regal, R; Rit, C; Ayoub, M; Siffert, P

    2001-01-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: af...

  12. Recent Progress in CdTe and CdZnTe Detectors

    OpenAIRE

    Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises du...

  13. Characterization of the CMS Pixel Detectors

    CERN Document Server

    Gu, Weihua

    2002-01-01

    In 2005 the Large Hadron Collider (LHC) will start the pp collisions at a high luminosity and at a center of mass energy of 14 TeV. The primary goal of the experimental programme is the search of the Higgs boson(s) and the supersymmetric particles. The programme is also proposed to detect a range of diverse signatures in order to provide guidance for future physics. The pixel detector system makes up the innermost part of the CMS experiment, which is one of the two general purpose detectors at the LHC. The main tasks of the system are vertex detection and flavor tagging. The high luminosity and the high particle multiplicity as well as the small bunch spacing at the LHC impose great challenges on the pixel detectors: radiation hardness of sensors and electronics, fast signal processing and a high granularity are the essential requirements. This thesis concentrates on the study of the suitability of two test stands, which are implemented to characterize the CMS pixel detectors: one is con-cerned with test puls...

  14. The Belle II DEPFET pixel detector

    International Nuclear Information System (INIS)

    The Japanese flavour factory (KEKB) accumulated a total integrated luminosity of 1000 fb-1 over more than a decade of operation. Despite this great success, an upgrade of the existing machine is under construction, and is foreseen for commissioning by the end of 2015. This new electron-positron machine (SuperKEKB) will deliver an instantaneous luminosity 40 times higher than the world record set by KEKB. To fully exploit the huge number of events and measure precisely the decay vertex of the B mesons in a large background environment, the SuperKEKB partner, the Belle detector, will be also upgraded. In the Belle II project, a highly granular silicon vertex detector (PXD) based on the DEPFET pixel technology, will be the innermost subsystem, operated very close to the interaction point. The new pixel detector has to have an excellent single point resolution (10 μm) and a fast readout (20 μs), while keeping the material budget under very low levels (0.2% X0). This talk summarizes the Belle II pixel detector concept, from the DEPFET sensor to the laboratory tests results, all the way up the electronics chain, the DAQ system and the cooling concept.

  15. Readout architecture of the CMS pixel detector

    CERN Document Server

    Baur, R

    2001-01-01

    In this paper we describe the readout architecture of the CMS pixel chip. In column drain architecture the complex tasks of data buffering and trigger verification are performed in the circuit periphery. This allows to use a rather simple pixel unit cell which requires only a small number of transistors. The column periphery logic is designed for readout and trigger rates expected for full LHC luminosity. At LHC the high particle flux can create single event upsets in the readout chips. At small radii the upsets of logic cells could severely affect the performance of the pixel detector readout. We have therefore performed a measurement of the upset rate at the PSI pion beam and describe the consequences for the design of the readout chip. (5 refs).

  16. Improvement of sensitivity in scinti-mammography because of the CdZnTe detector and optimized collimation combination

    International Nuclear Information System (INIS)

    Purpose: In order to move the resolution space-effectiveness compromise of the Anger gamma cameras, a new architecture based on a pixelated CdZnTe detector has been developed. This allows using a broad opening parallel collimator to gain sensitivity. The degraded spatial resolution is restored through precise 3 D electronic tracking of interactions in the detector. The aim of this study is to quantify in the framework of the scinti-mammography, the progress in available efficiency without any loss in image quality. In this aim an optimization of parallel holes collimator characteristics is realized. Conclusions: In a first time, the study showed that a sharp spatial sampling of the detector would allow to improve significantly the efficiency while keeping, even improving the spatial resolution. In these geometrical conditions corresponding to the scinti-mammography, a benefit of a factor 3 can be obtained. This benefit is interesting to reduce especially the strong doses applied to the patients or the acquisition times. (N.C.)

  17. Radiation Experience with the CMS Pixel Detector

    CERN Document Server

    Veszpremi, Viktor

    2015-01-01

    The CMS pixel detector is the innermost component of the CMS tracker occupying the region around the centre of CMS, where the LHC beams are crossed, between 4.3~cm and 30~cm in radius and 46.5~cm along the beam axis. It operates in a high-occupancy and high-radiation environment created by particle collisions. Studies of radiation damage effects to the sensors were performed throughout the first running period of the LHC. Leakage current, depletion voltage, pixel read-out thresholds, and hit finding efficiencies were monitored as functions of the increasing particle fluence. The methods and results of these measurements will be described together with their implications to detector operation as well as to performance parameters in offline hit reconstruction.

  18. Radiation experience with the CMS pixel detector

    Science.gov (United States)

    Veszpremi, V.

    2015-04-01

    The CMS pixel detector is the innermost component of the CMS tracker occupying the region around the centre of CMS, where the LHC beams are crossed, between 4.3 cm and 30 cm in radius and 46.5 cm along the beam axis. It operates in a high-occupancy and high-radiation environment created by particle collisions. Studies of radiation damage effects to the sensors were performed throughout the first running period of the LHC . Leakage current, depletion voltage, pixel readout thresholds, and hit finding efficiencies were monitored as functions of the increasing particle fluence. The methods and results of these measurements will be described together with their implications to detector operation as well as to performance parameters in offline hit reconstruction.

  19. Monolithic pixel detectors for high energy physics

    CERN Document Server

    Snoeys, W

    2013-01-01

    Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio ( Q / C ). It is shown that monolithic detectors can achieve Q / C for low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining suf fi cient Q / C , collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.

  20. Simulated and associated experimental results of CdZnTe radiation detector response for gamma-ray imaging applications

    International Nuclear Information System (INIS)

    Simulated and associated experimental results of a high efficiency CdZnTe (CZT) radiation detector response for gamma-ray imaging applications are presented. The model of a high efficiency semiconductor gamma ray detector takes into account several different physical phenomena involved in the detection and correction processes, namely the geometry of the irradiation, the gamma-ray's interaction with the crystal, the physics of the semiconductor's charge collection, the electric field distribution and the pulse height correction method. A few important decoupling assumptions allow the authors to use a one dimensional charge collection simulation with a two-dimensional field model and a full three dimensional Monte-Carlo calculation of the gamma ray interactions. The model allows calculation of charge collection and gamma ray spectra for non uniform electric field distribution in either planar, striped or pixellated detector. The model takes also into account the new CZT fast pulse correction method and its associated noise by considering the pulse height and the rise time of electron signals (Bi-Parametric spectrum) for all gamma ray interactions. Specific simulated and experimental spectra at 122 keV are presented for CZT. First, basic spectral changes are calculated for variations in crystal and detector properties like mobility, trapping lifetime and electric field profiles. Second, new experimental results of the fast pulse correction method applied to different CZT detector grades are presented. This method allows to achieve a high detection efficiency (> 80%) with a good energy resolution (3 CZT detector. No specific contact geometry is needed and the unusual low applied bias voltage allows to limit the aging and break voltage effects and also the dark current and its associated noise. This fast correction method is expected to be useful for medical imaging and other applications. Finally, simulated Bi-Parametric (BP) spectra expected with the fast pulse

  1. Evaluation of CdZnTe detector for personal surveymeter applications

    International Nuclear Information System (INIS)

    In this paper, we report the fabrication and characterization of the personal surveymeter using home made Cd0.8Zn0.2Te detector for the field application. The detector structure is the bulk type and Au electrode is formed by electroless deposition method. The properties of Au film were analyzed by the AFM, RBS and Auger spectroscopy. The reliability test results showed that TO-5 packaged CdZnTe detector had good stability. When the detector bias voltage was higher, the detector response was more stable at the low temperature. The personal surveymeter also showed good linear response about gamma dose rate from 1 mRad/hr to 500 Rad/hr

  2. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS

    International Nuclear Information System (INIS)

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance

  3. Characterization of the CMS pixel detectors

    OpenAIRE

    Gu, Weihua

    2002-01-01

    In 2005 the Large Hadron Collider (LHC) will start the pp collisions at a high luminosity and at a center of mass energy of 14 TeV. The primary goal of the experimental programme is the search of the Higgs boson(s) and the supersymmetric particles. The programme is also proposed to detect a range of diverse signatures in order to provide guidance for future physics. The pixel detector system makes up the innermost part of the CMS experiment, which is one of the two general purpose detectors a...

  4. Optical links for the ATLAS Pixel detector

    CERN Document Server

    Stucci, Stefania Antonia; The ATLAS collaboration

    2015-01-01

    Optical links are necessary to satisfy the high speed readout over long distances for advanced silicon detector systems. We report on the optical readout used in the newly installed central pixel layer (IBL) in the ATLAS experiment. The off detector readout employs commercial optical to analog converters, which were extensively tested for this application. Performance measurements during installation and commissioning will be shown. With the increasing instantaneous luminosity in the next years, the next layers outwards of IBL of the ATLAS Pixel detector (Layer 1 and Layer 2) will reach their bandwidth limits. A plan to increase the bandwidth by upgrading the off detector readout chain is put in place. The plan also involves new optical readout components, in particular the optical receivers, for which commercial units cannot be used and a new design has been made. The latter allows for a wider operational range in term of data frequency and light input power to match the on-detector sending units on the pres...

  5. optical links for the atlas pixel detector

    CERN Document Server

    Stucci, Stefania Antonia; The ATLAS collaboration

    2015-01-01

    Optical links are necessary to satisfy the high speed readout over long distances for advanced silicon detector systems. We report on the optical readout used in the newly installed central pixel layer (IBL) in the ATLAS experiment. The off detector readout employs commercial optical to analog converters, which were extensively tested for this application. Performance measurements during installation and commissioning will be shown. With the increasing instantaneous luminosity in the next years, the next layers outwards of IBL of the ATLAS Pixel detector (Layer 1 and Layer 2) will reach their bandwidth limits. A plan to increase the bandwidth by upgrading the off detector readout chain is put in place. The plan also involves new optical readout components, in particular the optical receivers, for which commercial units cannot be used and a new design has been made. The latter allows for a wider operational range in term of data frequency and light input power to match the on-detector sending units on the pres...

  6. Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers

    International Nuclear Information System (INIS)

    The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 109 Mcps mm-2 in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤10 Mcps in an optimistic view). Below 300 μm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 μm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 μm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 μm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous. The

  7. A CdZnTe slot-scanned detector for digital mammography

    International Nuclear Information System (INIS)

    A new high-resolution detector has been developed for use in a slot-scanned digital mammography system. The detector is a hybrid device that consists of a CCD operating in time-delay integration mode that is bonded to a 150-μm-thick CdZnTe photoconductor array. The CCD was designed with a detector element pitch of 50 μm. Two devices were evaluated with differing crystalline quality. Incomplete charge collection was a source of reduction in DQE. This occurs in both devices due to characteristically low mobility-lifetime products for CdZnTe, with the greatest losses demonstrated by the multicrystalline sample. The mobility-lifetime products for the multicrystalline device were found to be 2.4x10-4 and 4.0x10-7 cm2/V for electrons and holes, respectively. The device constructed with higher quality single crystal CdZnTe demonstrated mobility-lifetime products of 1.0x10-4 and 4.4x10-6 cm2/V for electrons and holes. The MTF and DQE for the device were measured at several exposures and results were compared to predictions from a linear systems model of signal and noise propagation. The MTF at a spatial frequency of 10 mm-1 exceeded 0.18 and 0.56 along the scan and slot directions, respectively. Scanning motion and CCD design limited the resolution along the scan direction. For an x-ray beam from a tungsten target tube with 40 μm molybdenum filtration operated at 26 kV, the single crystal device demonstrated a DQE(0) of 0.70±0.02 at 7.1x10-6 C/kg (27 mR) exposure to the detector, despite its relatively poor charge collection efficiency

  8. IDeF-X V1.0: A new 16-channel low-noise analog front-end for Cd(Zn)Te detectors

    International Nuclear Information System (INIS)

    Joint progress in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20 deg. C, these instruments will offer high spatial resolution (pixel size ranging from 300x300 μm2 to few mm2), high spectral response and high detection efficiency. To reach these goals, reliable, highly integrated, low noise and low power consumption electronics is mandatory. Our group is currently developing a new full-custom detector front-end ASIC named IDeF-X, for modular spectro-imaging system based on the use of Cd(Zn)Te detectors. We present the most recent version of IDeF-X which is a 16 channels analog readout chip for hard X-ray spectroscopy. It has been processed with the standard AMS 0.35 μm CMOS technology. Each channel consists of a charge sensitive preamplifier, a pole zero cancellation stage, a variable peaking time filter and an output buffer. IDeF-X is designed to be DC coupled to detectors having a low dark current at room temperature and is optimized for input capacitance ranging from 2 to 5pF

  9. HAND-HELD GAMMA-RAY SPECTROMETER BASED ON HIGH-EFFICIENCY FRISCH-RING CdZnTe DETECTORS

    International Nuclear Information System (INIS)

    Frisch-ring CdZnTe detectors have demonstrated good energy resolution, el% FWHM at 662 keV, and good efficiency for detecting gamma rays. This technique facilitates the application of CdZnTe materials for high efficiency gamma-ray detection. A hand-held gamma-ray spectrometer based on Frisch-ring detectors is being designed at Brookhaven National Laboratory. It employs an 8x8 CdZnTe detector array to achieve a high volume of 19.2 cm3, so that detection efficiency is significantly improved. By using the front-end ASICs developed at BNL, this spectrometer has a small profile and high energy resolution. The spectrometer includes signal processing circuit, digitization and storage circuit, high-voltage module, and USB interface. In this paper, we introduce the details of the system structure and report our test results with it

  10. Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Oldorf, Christian

    2015-08-15

    COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular {sup 116}Cd, {sup 106}Cd and {sup 130}Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of {sup 116}Cd, a background rate in the order of 10{sup -3} counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10{sup 26} years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

  11. Recent Progress in CdTe and CdZnTe Detectors

    CERN Document Server

    Takahashi, T; Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and Gamma-ray astronomy missions are briefly discus...

  12. Development of gamma ray monitor using CdZnTe semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Rasolonjatovo, A.H.D.; Shiomi, T.; Nakamura, T. [Tohoku Univ., Department of Quantum Science and Energy Engineering, Sendai, Miyagi (Japan); Nishizawa, H.; Tsudaka, Y.; Fujiwara, H.; Araki, H.; Matsuo, K. [Mitsubishi Electric Corp., Amagasaki, Hyogo (Japan)

    2000-12-01

    In this study, we aimed to develop a new X-ray and gamma ray monitor using the CdZnTe semiconductor detector, which have high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of 10x10 mm{sup 2} by 2 mm thick CdZnTe detector were measured in the energy range of 10 keV to 1.8 MeV by using monoenergetic X-ray and gamma ray sources. The measured results showed very good agreement with the results calculated using the EGS4 Monte Carlo code taking into account the charge collection efficiency in the detector. By using two CZT detectors of 10x10x2 mm{sup 3} and 3x3x2 mm{sup 3} coupled with a filter, the weighted sum of a few energy channels with different cut-off energies was finally found out to realize a flat energy response to equivalent dose (counts per mSv) within {+-}30% or {+-}10% deviation. (author)

  13. CdZnTe x-ray detector for 30 {endash} 100 keV energy

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, S.-S. [Illinois Univ., Chicago, IL (United States). Dept. of Physics][Argonne National Lab., IL (United States); Rodricks, B.; Shastri, S.D. [Argonne National Lab., IL (United States); Montano, P.A. [Illinois Univ., Chicago, IL (United States). Dept. of Physics][Argonne National Lab., IL (United States)

    1996-07-01

    High-pressure-Bridgman (HPB) grown CdZnTe x-ray detectors 1.25-1.7 mm thick were tested using monochromatic x-rays of 30 to 100 keV generated by a high energy x-ray generator. The results were compared with a commercially available 5 cm thick NaI detector. A linear dependence of the counting rate versus the x-ray generator tube current was observed at 58.9 keV. The measured pulse height of the photopeaks shows a linear dependence on energy. Electron and hole mobility-lifetime products ({mu}{tau}) were deduced by fitting bias dependent photopeak channel numbers at 30 keV x-ray energy. Values of 2 x 10{sup -3} cm{sup 2}/V and 2 x 10{sup -4}cm{sup 2}/V were obtained for {mu}{tau}{sub e} and {mu}{tau}{sub p}, respectively. The detector efficiency of CdZnTe at a 100 V bias was as high as, or higher than 90 % compared to a NaI detector. At x-ray energies higher than 70 keV, the detection efficiency becomes a dominant factor and decreases to 75 % at 100 keV.

  14. Preliminary Results from Small-Pixel CdZnTe and CdTe Arrays

    Science.gov (United States)

    Ramsey, B. D.; Sharma, D. P.; Meisner, J.; Austin, R. A.

    1999-01-01

    We have evaluated 2 small-pixel (0.75 mm) Cadmium-Zinc-Telluride arrays, and one Cadmium-Telluride array, all fabricated for MSFC by Metorex (Finland) and Baltic Science Institute (Riga, Latvia). Each array was optimized for operating temperature and collection bias. It was then exposed to Cadmium-109 and Iron-55 laboratory isotopes, to measure the energy resolution for each pixel and was then scanned with a finely-collimated x-ray beam, of width 50 micron, to examine pixel to pixel and inter-pixel charge collections efficiency. Preliminary results from these array tests will be presented.

  15. Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections

    Science.gov (United States)

    Zhang, Qiushi; Zhang, Congzhe; Lu, Yanye; Yang, Kun; Ren, Qiushi

    2013-01-01

    CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques. PMID:23429509

  16. Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections

    Directory of Open Access Journals (Sweden)

    Qiushi Ren

    2013-02-01

    Full Text Available CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques.

  17. High voltage optimization in CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Awadalla, S.A., E-mail: salahawadalla@yahoo.com [College of Engineering, Taibah University, Yanbu (Saudi Arabia); Al-Grafi, M. [College of Engineering, Taibah University, Yanbu (Saudi Arabia); Iniewski, K. [Redlen Technologies, Victoria BC (Canada)

    2014-11-11

    The focus of this paper is to investigate, experimentally and theoretical, the optimum operating bias, in cadmium zinc telluride Cd {sub 0.9}Zn{sub 0.1}Te (CZT) crystals grown using the traveling heater method (THM), required to achieve maximum energy resolution. It was found that 5 mm thick detectors that have low electron trapping, (μτ)e≥1×10{sup −2} cm{sup 2}/V, operates efficiently at relatively low applied bias, 200 V; while detectors with high electron trapping, (μτ)e≤5×10{sup −3} cm{sup 2}/V, required relative high voltage: as high as 1000 V for 5 mm thick detectors. Similarly 10 mm thick detectors can be operated at as low as 500 V. Moreover, both charge collection efficiency (CCE) and energy resolution(ER) were found to follow the same trend.

  18. High voltage optimization in CdZnTe detectors

    International Nuclear Information System (INIS)

    The focus of this paper is to investigate, experimentally and theoretical, the optimum operating bias, in cadmium zinc telluride Cd 0.9Zn0.1Te (CZT) crystals grown using the traveling heater method (THM), required to achieve maximum energy resolution. It was found that 5 mm thick detectors that have low electron trapping, (μτ)e≥1×10−2 cm2/V, operates efficiently at relatively low applied bias, 200 V; while detectors with high electron trapping, (μτ)e≤5×10−3 cm2/V, required relative high voltage: as high as 1000 V for 5 mm thick detectors. Similarly 10 mm thick detectors can be operated at as low as 500 V. Moreover, both charge collection efficiency (CCE) and energy resolution(ER) were found to follow the same trend

  19. Prompt gamma ray measurement in the KUR irradiation room by Cd-Zn-Te semiconductor detector for PG-SPECT

    International Nuclear Information System (INIS)

    Prompt gamma-rays from 10B(n,αγ)7Li reaction yielded in polyethylene plate containing 30 wt% 10B and/or 50 ppm 10B water phantom were measured in the medical irradiation room at the KUR-HWNIF, by Cd-Zn-Te semiconductor detector with tungsten collimator which has a hole of 3 mm diameter and 8 cm and/or 14 cm length. An application possibility of Cd-Zn-Te semiconductor detector to PG-SPECT was examined experimentally for BNCT. (author)

  20. Monte Carlo simulation of the energy spectrum for CdZnTe Frisch grid detector

    Science.gov (United States)

    Xu, Zhaoli; Wang, Linjun; Min, Jiahua; Teng, Jianyong; Qin, Kaifeng; Hu, Dongni; Zhang, Jijun; Huang, Jian; Xia, Yiben

    2009-07-01

    In this paper, we use the Monte-Carlo method to study the reaction of the electron-hole pairs produced to randomicity and the statistics rule, according to the principal of the detector and the gamma ray track in the CdZnTe detector. The EGSnrc software based on Monte-Carlo method is used to simulate the process of carriers' transportation. The statistics rule greatly reflects the result in Monte Carlo simulation. Firstly, we use Ansys software to create a model of the object for Monte-Carlo simulation, which is the basis for our further Monte-Carlo research. During Ansys simulation, a columniform block is created, where the electrical and thermal properties of the materials for simulation use are established. Then, the charge collection efficiency through the statistical approach was calculated using the EGSnrc software. Furthermore, by considering the interaction mechanism of CdZnTe with gamma ray, several modules in the software are added into Monte Carlo simulation. Finally, the pulse height spectra with the response to gamma ray, are available from the simulation. The comparison between the simulation and the measurement result is indicated, which shows that the simulation experiment is reliable. The Frisch grid detector can get the responses more efficiently than other structure devices.

  1. Barrier controlled carrier trapping of extended defects in CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Rongrong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Jie, Wanqi, E-mail: jwq@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Xu, Yadong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

    2015-09-11

    Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established.

  2. Study of electric field distribution and low frequency noise of CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Polarization phenomena in a metal-semiconductor-metal (M-S-M) structure of metallic Schottky contacts deposited on CdZnTe radiation detectors were studied. We evaluate the distribution of the electric field along the biased M-S-M structure by Pockels measurements. The results show that almost all the electric field is developed across the depletion layer of the reverse-biased contact. The noise measurements of the CdZnTe detectors studied show that the dominant noise is 1/fm noise. The 1/fm noise, with the parameter m close to one, is present at frequencies below 100 Hz and its bandwidth decreases in the course of the polarization process. At higher frequencies, we observed an increase of the m parameter to 2, which indicates a strengthened effect of the generation-recombination processes. In the frequency band of dominating 1/fm=1 noise, the increase of magnitude of the noise spectral density was proportional to the power of 6, in relation to the current through the detector. This high value is explained as a result of a screening effect of the space charge buildup during the polarization.

  3. Survey of the ATLAS Pixel Detector Components

    International Nuclear Information System (INIS)

    This document provides a description of the survey performed on different components of the ATLAS Pixel Detector at different stages of its assembly. During the production of the ATLAS pixel detector great care was put in the geometrical survey of the location of the sensitive area of modules. This had a double purpose: (1) to provide a check of the quality of the assembly procedure and assure tolerances in the geometrical assembly were met; and (2) to provide an initial point for the alignment (the so called 'as-built detector'), better than the ideal geometry. Since direct access to the sensitive area becomes more and more difficult with the progress of the assembly, the survey needed to be performed at different stages: after module loading on the local supports (sectors and staves) and after assembly of the local supports in disks or halfshells. Different techniques were used, including both optical 2D and 3D surveys and mechanical survey. This document summarizes the survey procedures, the analysis done on the collected data and how survey data are stored in case they will need to be accessed in the future

  4. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    HOSSAIN, A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices for gamma spectroscopy. Sample preparation and results are discussed. The researachers demonstrated various bulk defects (e.g., dislocations and sub-grain boundaries) and surface defects, and examined their effects on the performance of detectors. A comparison study was made between two chemical etchants to produce non-conductive smooth surfaces. A mixture of bromine and hydrogen peroxide proved more effective than conventional bromine etchant. Both energy resolution and detection efficiency of CZT planar detectors were noticeably increased after processing the detector crystals using improved chemical etchant and processing methods.

  5. Investigation of charge sharing among electrode strips for a CdZnTe detector

    International Nuclear Information System (INIS)

    We have investigated charge sharing among the anode strips of a CdZnTe (CZT) detector using a 30 μm collimated gamma-ray beam. We compared the laboratory measurements with the predictions from our modeling of the charge transport within the detector. The results indicate that charge sharing is a function of the interaction depth and the energy of the incoming photon. Also, depending on depth, a fraction of the electrons might drift to the inter-anode region causing incomplete charge collection. Here, we show that photoelectron range and diffusion of the charge cloud are the principal causes of charge sharing and obtain limits on the size of the electron cloud as a function of position in the detector

  6. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Kyle A., E-mail: nuclearengg@gmail.com [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States); Geuther, Jeffrey A. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States); Neihart, James L.; Riedel, Todd A. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States); Rojeski, Ronald A. [Nanometrics, Inc., 1550 Buckeye Drive, Milpitas CA 95035 (United States); Ugorowski, Philip B.; McGregor, Douglas S. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan KS 66506 (United States)

    2012-07-11

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the {sup 10}B-lined counter.

  7. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    Science.gov (United States)

    Nelson, Kyle A.; Geuther, Jeffrey A.; Neihart, James L.; Riedel, Todd A.; Rojeski, Ronald A.; Ugorowski, Philip B.; McGregor, Douglas S.

    2012-07-01

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the 10B-lined counter.

  8. The ALICE Silicon Pixel Detector System

    CERN Document Server

    Fadmar Osmic, FO

    2006-01-01

    The European Organization for Particle Physics (CERN) in Geneva is currently constructing the Large Hadron Collider (LHC), which will allow the study of the subnuclear ranges of physics with an accuracy never achieved before. Within the LHC project, ALICE is to the study of strongly interacting matter at extreme densities and high temperatures. ALICE as many other modern High Energy Physics (HEP) experiments uses silicon pixel detectors for tracking close to the interaction point (IP). The ALICE Silicon Pixel Detector (SPD) will constitute the two innermost layers of ALICE, and will due to its high granularity provide precise tracking information. In heavy ion collisions, the track density could be as high as 80 tracks/cm2 in the first SPD layer. The SPD will provide tracking information at radii of 3.9 and 7.6 cm from the IP. It is a fundamental element for the study of the weak decays of the particles carrying heavy flavour, whose typical signature will be a secondary vertex separated from the primary verte...

  9. ATLAS rewards two pixel detector suppliers

    CERN Multimedia

    2007-01-01

    Peter Jenni, ATLAS spokesperson, presented the ATLAS supplier award to Herbert Reichl, IZM director, and to Simonetta Di Gioia, from the SELEX company.Two of ATLAS’ suppliers were awarded prizes at a ceremony on Wednesday 13 June attended by representatives of the experiment’s management and of CERN. The prizes went to the Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (IZM) in Berlin and the company SELEX Sistemi Integrati in Rome for the manufacture of modules for the ATLAS pixel detector. SELEX supplied 1500 of the modules for the tracker, while IZM produced a further 1300. The modules, each made up of 46080 channels, form the active part of the ATLAS pixel detector. IZM and SELEX received the awards for the excellent quality of their work: the average number of faulty channels per module was less than 2.10-3. They also stayed within budget and on schedule. The difficulty they faced was designing modules based on electronic components and sensor...

  10. Preliminary results from a novel CdZnTe linear pad detector array x-ray imaging system

    International Nuclear Information System (INIS)

    The excellent energy-resolution and short charge collection time, especially the possibility of room temperature operation, make CdZnTe semiconductor detectors an excellent candidate for x-ray imaging and spectroscopic application in nuclear physics. Because of these characteristics, CdZnTe pad detectors with a novel geometry and approximately 1 mm2 pad area have been developed. These pad type linear arrays are new and important for many scanning type applications using a wide energy range from about 10 to 300 keV energies. A prototype x-ray imaging system has been developed consisting of a state-of-the-art pad type linear array of CdZnTe detectors manufactured by eV Products and low noise readout electronics developed by NOVA R and D, Inc. A series of measurements on the temperature dependence of the performance of CdZnTe linear pad detector arrays has been performed at NOVA R and D, Inc. The changes in dark (leakage) current against temperature have been studied. High resolution x-ray spectra has been obtained using 57Co source at different temperatures. A low noise front-end electronics ASIC chip for reading out the detector array was developed that can achieve fast data acquisition with dual energy imaging capability. Several prototype CdZnTe pad detector arrays are placed next to each other to form an approximately 30 cm long linear array. This array is used to make preliminary dual energy scanned images of complex objects using a 90 kV x-ray generator. Some of the images will be presented. The results show that the system is excellent for applications in industrial and medical imaging

  11. Commissioning the CMS pixel detector with Cosmic Rays

    CERN Document Server

    Heyburn, Bernadette

    2009-01-01

    The Compact Muon Solenoid (CMS) is one of two general purpose experiments at the Large Hadron Collider. The CMS experiment prides itself on an ambitious, all silicon based, tracking system. After almost 20 years of design and construction the CMS tracker detector has been installed and commissioned. The tracker detector consists of ten layers of silicon microstrip detectors while three layers of pixel detector modules are situated closest to the interaction point. The pixel detector consists of 66 million pixels of 100mm 150mm size, and is designed to use the shape of the actual charge distribution of charged particles to gain hit resolutions down to 12mm. This paper will focus on commissioning activities in the CMS pixel detector. Results from cosmic ray studies will be presented, in addition to results obtained from the integration of the pixel detector within the CMS detector and various calibration and alignment analyses.

  12. Simulation of the anode structure for capacitive frisch grid CdZnTe detectors

    International Nuclear Information System (INIS)

    CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution. The anode structrure might have an important role in improving the weighting potential distribution of the detectors. In this paper, four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation, based on a 3-dimensional weighting potential analysis. The weighting potential distributions in modified anode devices (Model B, C and D) are optimized compared with a square device (Model A). In model C and D, the abrupt weighting potential can be well modified. However, with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D, the weighting potential does not vary too much. (authors)

  13. CHARACTERIZATION OF SPATIAL HETEROGENIETIES IN DETECTOR GRADE CdZnTe

    International Nuclear Information System (INIS)

    Synthetic Cd1-xZnxTe or 'CZT' crystals are highly suitable for the room temperature-based spectroscopy of gamma radiation. Structural/morphological heterogeneities within CZT, such as secondary phases that are thought to consist of Te metal and have detrimental impacts on detector performance. In this study, we used electron and X-ray-based imaging techniques to examine heterogeneous properties of detector grade CZT. Using experimental analytical techniques rather than arbitrary theoretical definitions, our study identifies two dominant secondary phase morphologies. The first consists of numerous empty, 20 (micro) m wide, pyramidal bodies (tetrahedra) or 'negative' crystals with trace quantities of particulate residue that exist as 65 nm sized particles containing Si, Cd, Zn, and Te. The other consists of 20 (micro)m hexagonal-shaped bodies, which are composites of metallic Te layers that contain a teardrop-shaped core of amorphous and polycrystalline CdZnTe which finally surrounds an irregular-shaped void

  14. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author)

  15. CdZnTe drift detector with correction for hole trapping

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl

    1998-01-01

    The results are presented of a CdZnTe drift detector for which the energy determination can be corrected for hole trapping. The electronic noise and the hole contribution to the signal are reduced and the signals are also corrected for any residual effects of hole trapping. This is achieved by...... using drift strips and an anode strip on one side of the detector crystal in combination with a single planar electrode on the other side. Below 100 keV, the resolution tin FWHM) was electronic noise limited. Using a planar electrode, the peak of Am-241 at 59.6 keV has a width of 14.1 keV. The...

  16. CdTe and CdZnTe crystals for room temperature gamma-ray detectors

    CERN Document Server

    Franc, J; Belas, E; Grill, R; Hlidek, P; Moravec, P; Bok, J B

    1999-01-01

    CdTe(Cl) detectors from CdTe single crystals, grown by the Bridgman method from Te-rich melt, were fabricated. The quality of the detectors was tested with sup 5 sup 7 Co and sup 2 sup 4 sup 1 Am sources. In the sup 5 sup 7 Co spectrum low noise is demonstrated by the presence of a 14 keV peak and good resolution approx 7 keV (FWHM) evident from the separation of 122 and 136 keV peaks. A review is given of the state-of-the-art properties of (CdZn)Te single crystals prepared for substrates in the Institute of Physics of Charles University. The quality of samples is tested by measurements of the diffusion length of minority carriers, from which the mobility-lifetime product is evaluated. (author)

  17. Development of low background CdZnTe detectors for detection of double beta decays of sup 6 sup 4 Zn

    CERN Document Server

    Watanabe, T; Takahisa, K; Tanikawa, M; Ito, Y

    1999-01-01

    Development of low background CdZnTe detectors is in progress to study neutrino-less double beta decay. The mu tau product (mobility times lifetime) for holes was measured in a set of CdZnTe detectors at various temperatures between +22 deg. C and -40 deg. C in order to investigate charge collection efficiencies for holes. The sensitivity of CdZnTe detectors to neutrino-less beta sup + EC decays of sup 6 sup 4 Zn ( sup 6 sup 4 Zn+EC-> sup 6 sup 4 Ni+beta sup +) is estimated from these data.

  18. Detector performance of the ALICE silicon pixel detector

    CERN Document Server

    Cavicchioli, C

    2011-01-01

    The ALICE Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE Inner Tracking System (ITS). It consists of two barrel layers of hybrid silicon pixel detectors at radii of 39 and 76 mm. The physics targets of the ALICE experiment require that the material budget of the SPD is kept within approximate to 1\\%X(0) per layer. This has set some stringent constraints on the design and construction of the SPD. A unique feature of the ALICE SPD is that it is capable of providing a prompt trigger signal, called Fast-OR, which contributes to the L0 trigger decision. The pixel trigger system allows to apply a set of algorithms for the trigger selection, and its output is sent to the Central Trigger Processor (CTP). The detector has been installed in the experiment in summer 2007. During the first injection tests in June 2008 the SPD was able to record the very first sign of life of the LHC by registering secondary particles from the beam dumped upstream the ALICE experiment. In the following months the...

  19. Background capabilities of pixel detectors for double beta decay measurements

    Energy Technology Data Exchange (ETDEWEB)

    Cermak, Pavel, E-mail: pavel.cermak@utef.cvut.cz [Institute of Experimental and Applied Physics, CTU in Prague, 12800 Prague (Czech Republic); Stekl, Ivan; Bocarov, Viktor; Jose, Joshy M.; Jakubek, Jan; Pospisil, Stanislav [Institute of Experimental and Applied Physics, CTU in Prague, 12800 Prague (Czech Republic); Fiederle, Michael; Fauler, Alex [Freiburger Materialforschungszentrum, Albert-Ludwigs-Universitaet Freiburg, D-79104 Freiburg (Germany); Zuber, Kai [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, 01069 Dresden (Germany); Loaiza, Pia [Laboratoire Souterrain de Modane, 73500 Modane (France); Shitov, Yuriy [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2011-05-15

    We discuss the possible use of a progressive detection technique based on pixel detectors for the study of double beta decay ({beta}{beta}) processes. A series of background measurements in various environments (surface laboratory, underground laboratory, with and without Pb shielding) was performed using the TimePix silicon hybrid pixel device. The pixel detector response to the natural background and intrinsic background properties measured by a low-background HPGe detector are presented.

  20. Operational experience with the ATLAS Pixel Detector at the LHC

    Science.gov (United States)

    Lapoire, C.; Atlas Collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy is sufficiently low and hit efficiency exceed the design specification.

  1. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Hirschbuehl, D; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.7% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  2. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Keil, M; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  3. Operational experience with the ATLAS Pixel detector at the LHC

    CERN Document Server

    Deluca, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5\\% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, ...

  4. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.8% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  5. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lapoire, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  6. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lapoire, C; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification.

  7. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lange, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump- bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, a...

  8. Operational experience with the ATLAS Pixel detector at the LHC

    CERN Document Server

    Deluca, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  9. Pixel detector modules performance for ATLAS IBL and future pixel detectors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00355104; Pernegger, Heinz

    2015-11-06

    The ATLAS Detector is one of the four big particle physics experiments at CERN’s LHC. Its innermost tracking system consisted of the 3-Layer silicon Pixel Detector (~80M readout channels) in the first run (2010-2012). Over the past two years it was refurbished and equipped with new services as well as a new beam monitor. The major upgrade, however, was the Insertable B-Layer (IBL). It adds ~12M readout channels for improved vertexing, tracking robustness and b-tagging performance for the upcoming runs, before the high luminosity upgrade of the LHC will take place. This thesis covers two main aspects of Pixel detector performance studies: The main work was the planning, commissioning and operation of a test bench that meets the requirements of current pixel detector components. Each newly built ATLAS IBL stave was thoroughly tested, following a specifically developed procedure, and initially calibrated in that setup. A variety of production accompanying measurements as well as preliminary results after integ...

  10. Control of electric field in CdZnTe radiation detectors by above-bandgap light

    International Nuclear Information System (INIS)

    We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states

  11. Investigation of the spectral improvement of a capacitive Frisch-grid CdZnTe detector by using infrared stimulation

    Science.gov (United States)

    Yang, Guoqiang; Xiao, Shali; Ma, Yuedong; Zhang, Liuqiang

    2014-08-01

    A capacitive Frisch-grid CdZnTe detector with different lengths of the Frisch rings has been fabricated, and the influence of infrared (IR) stimulation on the spectral performance of the detector has been investigated. IR stimulation at a wavelength (940 nm), close to the absorption edge of the CdZnTe, was found to improve the detector's spectral performance significantly. IR radiation was noted to influence the detector's sensitivity, changing the equilibrium between free and trapped carriers and improving the charge collection. The degree of improvement was different for detectors with different lengths of the Frisch rings and depended on the weighting potential distribution and the IR illumination intensity. For example, improvement was obtained in the energy resolution (FWHM) at 662 keV from 3.3% without illumination to 2.3% with a low intensity (120 μW) of IR illumination for the capacitive Frisch-grid CdZnTe detector with an 8-mm-long Frisch ring. Good energy resolution could be obtained even at low operating voltages.

  12. Investigation of the spectral improvement of a capacitive Frisch-grid CdZnTe detector by using infrared stimulation

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Guoqiang; Xiao, Shali; Ma, Yuedong; Zhang, Liuqiang [Chongqing University, Chongqing (China)

    2014-08-15

    A capacitive Frisch-grid CdZnTe detector with different lengths of the Frisch rings has been fabricated, and the influence of infrared (IR) stimulation on the spectral performance of the detector has been investigated. IR stimulation at a wavelength (940 nm), close to the absorption edge of the CdZnTe, was found to improve the detector's spectral performance significantly. IR radiation was noted to influence the detector's sensitivity, changing the equilibrium between free and trapped carriers and improving the charge collection. The degree of improvement was different for detectors with different lengths of the Frisch rings and depended on the weighting potential distribution and the IR illumination intensity. For example, improvement was obtained in the energy resolution (FWHM) at 662 keV from 3.3% without illumination to 2.3% with a low intensity (120 μW) of IR illumination for the capacitive Frisch-grid CdZnTe detector with an 8-mm-long Frisch ring. Good energy resolution could be obtained even at low operating voltages.

  13. Investigation of the spectral improvement of a capacitive Frisch-grid CdZnTe detector by using infrared stimulation

    International Nuclear Information System (INIS)

    A capacitive Frisch-grid CdZnTe detector with different lengths of the Frisch rings has been fabricated, and the influence of infrared (IR) stimulation on the spectral performance of the detector has been investigated. IR stimulation at a wavelength (940 nm), close to the absorption edge of the CdZnTe, was found to improve the detector's spectral performance significantly. IR radiation was noted to influence the detector's sensitivity, changing the equilibrium between free and trapped carriers and improving the charge collection. The degree of improvement was different for detectors with different lengths of the Frisch rings and depended on the weighting potential distribution and the IR illumination intensity. For example, improvement was obtained in the energy resolution (FWHM) at 662 keV from 3.3% without illumination to 2.3% with a low intensity (120 μW) of IR illumination for the capacitive Frisch-grid CdZnTe detector with an 8-mm-long Frisch ring. Good energy resolution could be obtained even at low operating voltages.

  14. Analytical model for event reconstruction in coplanar grid CdZnTe detectors

    CERN Document Server

    Fritts, Matthew; Göpfert, Thomas; Wester, Thomas; Zuber, Kai

    2012-01-01

    Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction of deposited energy based on the difference between the two signals, and a reconstruction of the interaction depth based on the ratio of the amplitudes of the sum and difference of the signals. Energy resolution is greatly improved by modifying the difference signal with an empirically determined weighting factor to correct for the effects of electron trapping. In this paper is introduced a modified interaction depth reconstruction formula which corrects for electron trapping utilizing the same weighting factor used for energy reconstruction. The improvement of this depth reconstruction over simpler formulas is demonstrated. Further corrections due to the contribution of hole transport to the signals are discussed.

  15. Analytical model for event reconstruction in coplanar grid CdZnTe detectors

    International Nuclear Information System (INIS)

    Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction of deposited energy based on the difference between the two signals, and a reconstruction of the interaction depth based on the ratio of the amplitudes of the sum and difference of the signals. Energy resolution is greatly improved by modifying the difference signal with an empirically determined weighting factor to correct for the effects of electron trapping. This paper introduces a modified interaction depth reconstruction formula which corrects for electron trapping utilizing the same weighting factor used for energy reconstruction. The improvement of this depth reconstruction over simpler formulas is demonstrated. Further corrections due to the contribution of hole transport to the signals are discussed

  16. Analytical model for event reconstruction in coplanar grid CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fritts, Matthew, E-mail: Matthew_Christopher.Fritts@tu-dresden.de [Institut für Kern- und Teilchen-Physik (IKTP), Technische Universität Dresden, D-01062 Dresden (Germany); Durst, Jürgen, E-mail: juergen.durst@physik.uni-erlangen.de [Erlangen Centre for Astroparticle Physics (ECAP), Friedrich-Alexander Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, D-91058 Erlangen (Germany); Göpfert, Thomas, E-mail: thomas.goepfert@tu-dresden.de [Institut für Kern- und Teilchen-Physik (IKTP), Technische Universität Dresden, D-01062 Dresden (Germany); Wester, Thomas, E-mail: Thomas.Wester@physik.tu-dresden.de [Institut für Kern- und Teilchen-Physik (IKTP), Technische Universität Dresden, D-01062 Dresden (Germany); Zuber, Kai, E-mail: zuber@physik.tu-dresden.de [Institut für Kern- und Teilchen-Physik (IKTP), Technische Universität Dresden, D-01062 Dresden (Germany)

    2013-04-21

    Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction of deposited energy based on the difference between the two signals, and a reconstruction of the interaction depth based on the ratio of the amplitudes of the sum and difference of the signals. Energy resolution is greatly improved by modifying the difference signal with an empirically determined weighting factor to correct for the effects of electron trapping. This paper introduces a modified interaction depth reconstruction formula which corrects for electron trapping utilizing the same weighting factor used for energy reconstruction. The improvement of this depth reconstruction over simpler formulas is demonstrated. Further corrections due to the contribution of hole transport to the signals are discussed.

  17. Experimental study of double beta decay modes using a CdZnTe detector array

    CERN Document Server

    Dawson, J V; Janutta, B; Junker, M; Koettig, T; Münstermann, D; Rajek, S; Reeve, C; Schulz, O; Wilson, J R; Zuber, K

    2009-01-01

    An array of sixteen 1 cm^3 CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double beta decay searches with such devices. As one of the double beta decay experiments with the highest granularity the 4 x 4 array accumulated an overall exposure of 18 kg days. The set-up and performance of the array is described. Half-life limits for various double beta decay modes of Cd, Zn and Te isotopes are obtained. No signal has been found, but several limits beyond 10^20 years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation.

  18. Clustering method to process signals from a CdZnTe detector

    International Nuclear Information System (INIS)

    The poor mobility of holes in a compound semiconductor detector results in the imperfect collection of the primary charge deposited in the detector. Furthermore the fluctuation of the charge loss efficiency due to the change in the hole collection path length seriously degrades the energy resolution of the detector. Since the charge collection efficiency varies with the signal waveform, we can expect the improvement of the energy resolution through a proper waveform signal processing method. We developed a new digital signal processing technique, a clustering method which derives typical patterns containing the information on the real situation inside a detector from measured signals. The obtained typical patterns for the detector are then used for the pattern matching method. Measured signals are classified through analyzing the practical waveform variation due to the charge trapping, the electric field and the crystal defect etc. Signals with similar shape are placed into the same cluster. For each cluster we calculate an average waveform as a reference pattern. Using these reference patterns obtained from all the clusters, we can classify other measured signal waveforms from the same detector. Then signals are independently processed according to the classified category and form corresponding spectra. Finally these spectra are merged into one spectrum by multiplying normalization coefficients. The effectiveness of this method was verified with a CdZnTe detector of 2 mm thick and a 137Cs gamma-ray source. The obtained energy resolution as improved to about 8 keV (FWHM). Because the clustering method is only related to the measured waveforms, it can be applied to any type and size of detectors and compatible with any type of filtering methods. (author)

  19. Clustering method to process signals from a CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lan; Takahashi, Hiroyuki; Fukuda, Daiji; Nakazawa, Masaharu [Tokyo Univ., Graduate School of Engineering, Department of Quantum Engineering and Systems Science, Tokyo (Japan)

    2001-07-01

    The poor mobility of holes in a compound semiconductor detector results in the imperfect collection of the primary charge deposited in the detector. Furthermore the fluctuation of the charge loss efficiency due to the change in the hole collection path length seriously degrades the energy resolution of the detector. Since the charge collection efficiency varies with the signal waveform, we can expect the improvement of the energy resolution through a proper waveform signal processing method. We developed a new digital signal processing technique, a clustering method which derives typical patterns containing the information on the real situation inside a detector from measured signals. The obtained typical patterns for the detector are then used for the pattern matching method. Measured signals are classified through analyzing the practical waveform variation due to the charge trapping, the electric field and the crystal defect etc. Signals with similar shape are placed into the same cluster. For each cluster we calculate an average waveform as a reference pattern. Using these reference patterns obtained from all the clusters, we can classify other measured signal waveforms from the same detector. Then signals are independently processed according to the classified category and form corresponding spectra. Finally these spectra are merged into one spectrum by multiplying normalization coefficients. The effectiveness of this method was verified with a CdZnTe detector of 2 mm thick and a {sup 137}Cs gamma-ray source. The obtained energy resolution as improved to about 8 keV (FWHM). Because the clustering method is only related to the measured waveforms, it can be applied to any type and size of detectors and compatible with any type of filtering methods. (author)

  20. Semiconductor Pixel detectors and their applications in life sciences

    International Nuclear Information System (INIS)

    Recent advances in semiconductor technology allow construction of highly efficient and low noise pixel detectors of ionizing radiation. Steadily improving quality of front end electronics enables fast digital signal processing in each pixel which offers recording of more complete information about each detected quantum (energy, time, number of particles). All these features improve an extend applicability of pixel technology in different fields. Some applications of this technology especially for imaging in life sciences will be shown (energy and phase sensitive X-ray radiography and tomography, radiography with heavy charged particles, neutron radiography, etc). On the other hand a number of obstacles can limit the detector performance if not handled. The pixel detector is in fact an array of individual detectors (pixels), each of them has its own efficiency, energy calibration and also noise. The common effort is to make all these parameters uniform for all pixels. However an ideal uniformity can be never reached. Moreover, it is often seen that the signal in one pixel can affect the neighbouring pixels due to various reasons (e.g. charge sharing). All such effects have to be taken into account during data processing to avoid false data interpretation. A brief view into the future of pixel detectors and their applications including also spectroscopy, tracking and dosimetry is given too. Special attention is paid to the problem of detector segmentation in context of the charge sharing effect.

  1. Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

    2010-08-01

    Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

  2. Radiation detection. Chapter 4. Effects of tellurium precipitates on charge collection in CZT (CdZnTe) nuclear radiation detectors

    International Nuclear Information System (INIS)

    It has been recently demonstrated that individual Tellurium (Te) precipitates identified with infrared (IR) transmission microscopes in radiation detector-grade CdZnTe (CZT) crystals correlate precisely with poor charge collection. This indicates that Te precipitates adversely affect the electron charge collection efficiency and thus the performance of nuclear radiation detectors produced from the crystals. By employing different techniques it is investigated how Te precipitates affect different CZT devices. These measurements indicate that Te precipitates put limits on the size, electrode configurations and spectral performance of CZT detectors. These limits can be relaxed by lowering the size and density of Te precipitates in the detectors

  3. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  4. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    Science.gov (United States)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-06-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems.

  5. STAR Vertex Detector Upgrade-HFT Pixel Development

    International Nuclear Information System (INIS)

    Development and prototyping efforts directed towards construction of a new vertex detector for the STAR experiment at the RHIC accelerator at BNL are presented. This new detector will extend the physics range of STAR by allowing for precision measurements of yields and spectra of particles containing heavy quarks. The innermost central part of the new detector is a high resolution pixel-type detector (PIXEL). PIXEL requirements are discussed as well as a conceptual mechanical design, a sensor development path, and a detector readout architecture. Selected progress with sensor prototypes dedicated to the PIXEL detector is summarized and the approach chosen for the readout system architecture validated in tests of hardware prototypes is discussed.

  6. STAR Vertex Detector Upgrade—HFT Pixel Development

    Science.gov (United States)

    Szelezniak, Michal; Anderssen, Eric; Greiner, Leo C.; Matis, Howard S.; Ritter, Hans Georg; Stezelberger, Thorsten; Sun, Xiangming; Thomas, James H.; Vu, Chinh Q.; Wieman, Howard H.

    2009-03-01

    Development and prototyping efforts directed towards construction of a new vertex detector for the STAR experiment at the RHIC accelerator at BNL are presented. This new detector will extend the physics range of STAR by allowing for precision measurements of yields and spectra of particles containing heavy quarks. The innermost central part of the new detector is a high resolution pixel-type detector (PIXEL). PIXEL requirements are discussed as well as a conceptual mechanical design, a sensor development path, and a detector readout architecture. Selected progress with sensor prototypes dedicated to the PIXEL detector is summarized and the approach chosen for the readout system architecture validated in tests of hardware prototypes is discussed.

  7. Status of the digital pixel array detector for protein crystallography

    CERN Document Server

    Datte, P; Beuville, E; Endres, N; Druillole, F; Luo, L; Millaud, J E; Xuong, N H

    1999-01-01

    A two-dimensional photon counting digital pixel array detector is being designed for static and time resolved protein crystallography. The room temperature detector will significantly enhance monochromatic and polychromatic protein crystallographic through-put data rates by more than three orders of magnitude. The detector has an almost infinite photon counting dynamic range and exhibits superior spatial resolution when compared to present crystallographic phosphor imaging plates or phosphor coupled CCD detectors. The detector is a high resistivity N-type Si with a pixel pitch of 150x150 mu m, and a thickness of 300 mu m, and is bump bonded to an application specific integrated circuit. The event driven readout of the detector is based on the column architecture and allows an independent pixel hit rate above 1 million photons/s/pixel. The device provides energy discrimination and sparse data readout which yields minimal dead-time. This type of architecture allows a continuous (frameless) data acquisition, a f...

  8. Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts

    Science.gov (United States)

    Chang, Y.; Grein, C. H.; Becker, C. R.; Huang, J.; Ghosh, S.; Aqariden, F.; Sivananthan, S.

    2012-10-01

    Room-temperature-operating CdZnTe radiation detectors have high energy resolution, linear energy response and are capable of operating in normal counting and spectroscopic modes, hence are highly desirable for medical diagnosis, nondestructive industrial evaluations, homeland security, counterterrorism inspections and nuclear proliferation detection to ensure national and international nuclear safety. HgTe/HgCdTe superlattices can be designed to selectively transport one carrier species while hindering transport of the other. Specifically, one designs a large carrier effective mass for undesired carriers in the electric field direction, which results in low carrier velocities, and yet a density of states for undesired carrier that is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations, hence a low current density under an electric field. The opposite carrier species can be designed to have a large velocity and high density of states, hence producing a large current density. By employing HgTe/HgCdTe superlattices as contact layers intermediate between CdZnTe absorbers and metal contacts, leakage currents under high electric fields are reduced and improved x-ray and γ-ray detector performance is anticipated. Pixilated CdZnTe radiation detectors arrays were fabricated and characterized to evaluate the effectiveness of HgTe/HgCdTe superlattices in reducing leakage currents. Current-voltage characteristics show that HgTe/HgCdTe superlattice contact layers consistently result in significantly reduced leakage currents relative to detectors with only metal contacts.

  9. Simulation of signal in irradiated silicon pixel detectors

    CERN Document Server

    Kramberger, G

    2003-01-01

    Induced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. A significant difference in charge collection efficiency (CCE) between n**+-n and p **+-n detectors was predicted after irradiation to the LHC fluences. A possible use of silicon detectors for the LHC upgrade was investigated by simulation of thin pixel sensors. The reduced CCE due to charge trapping seems to be the largest obstacle for their use.

  10. Calibration/Survey/Alignment studies of STAR HFT Pixel Detector

    Science.gov (United States)

    Ma, Long

    2013-10-01

    As a critical component of the STAR inner tracking detector - Heavy Flavor Tracker (HFT), the pixel detector consists of 10 sectors with 400 million 20x20-micrometer pixels forming the two innermost layers of the HFT at radii of 2.5 and 8 cm, respectively. In Run-13, a three-sector prototype was installed and successfully integrated into STAR. To achieve physics goals of HFT, the alignment calibration of pixel detector to a high precision of ~10 microns is essential. The precision alignment to map out each pixel position within the sector is carried out via a survey measurement utilizing a Coordinate Measurement Machine with a repeatability of a few micrometers. The global position parameters of the pixel sectors with respect to the STAR TPC will be obtained via a track-based alignment method with beam collisions. Particularly, the sensitive area of the pixel detector is designed to have some overlaps in order to complete the relative alignment between sectors using tracks passing through the overlap region. In this presentation, we will present the alignment calibration procedure for the HFT pixel detector. Status of the alignment calibration for the pixel detector prototype in Run-13 will be discussed. for the STAR Collaboration

  11. Monte Carlo based performance assessment of different animal PET architectures using pixellated CZT detectors

    International Nuclear Information System (INIS)

    The majority of present position emission tomography (PET) animal systems are based on the coupling of high-density scintillators and light detectors. A disadvantage of these detector configurations is the compromise between image resolution, sensitivity and energy resolution. In addition, current combined imaging devices are based on simply placing back-to-back and in axial alignment different apparatus without any significant level of software or hardware integration. The use of semiconductor CdZnTe (CZT) detectors is a promising alternative to scintillators for gamma-ray imaging systems. At the same time CZT detectors have the potential properties necessary for the construction of a truly integrated imaging device (PET/SPECT/CT). The aims of this study was to assess the performance of different small animal PET scanner architectures based on CZT pixellated detectors and compare their performance with that of state of the art existing PET animal scanners. Different scanner architectures were modelled using GATE (Geant4 Application for Tomographic Emission). Particular scanner design characteristics included an overall cylindrical scanner format of 8 and 24 cm in axial and transaxial field of view, respectively, and a temporal coincidence window of 8 ns. Different individual detector modules were investigated, considering pixel pitch down to 0.625 mm and detector thickness from 1 to 5 mm. Modified NEMA NU2-2001 protocols were used in order to simulate performance based on mouse, rat and monkey imaging conditions. These protocols allowed us to directly compare the performance of the proposed geometries with the latest generation of current small animal systems. Results attained demonstrate the potential for higher NECR with CZT based scanners in comparison to scintillator based animal systems

  12. Monte Carlo based performance assessment of different animal PET architectures using pixellated CZT detectors

    Science.gov (United States)

    Visvikis, D.; Lefevre, T.; Lamare, F.; Kontaxakis, G.; Santos, A.; Darambara, D.

    2006-12-01

    The majority of present position emission tomography (PET) animal systems are based on the coupling of high-density scintillators and light detectors. A disadvantage of these detector configurations is the compromise between image resolution, sensitivity and energy resolution. In addition, current combined imaging devices are based on simply placing back-to-back and in axial alignment different apparatus without any significant level of software or hardware integration. The use of semiconductor CdZnTe (CZT) detectors is a promising alternative to scintillators for gamma-ray imaging systems. At the same time CZT detectors have the potential properties necessary for the construction of a truly integrated imaging device (PET/SPECT/CT). The aims of this study was to assess the performance of different small animal PET scanner architectures based on CZT pixellated detectors and compare their performance with that of state of the art existing PET animal scanners. Different scanner architectures were modelled using GATE (Geant4 Application for Tomographic Emission). Particular scanner design characteristics included an overall cylindrical scanner format of 8 and 24 cm in axial and transaxial field of view, respectively, and a temporal coincidence window of 8 ns. Different individual detector modules were investigated, considering pixel pitch down to 0.625 mm and detector thickness from 1 to 5 mm. Modified NEMA NU2-2001 protocols were used in order to simulate performance based on mouse, rat and monkey imaging conditions. These protocols allowed us to directly compare the performance of the proposed geometries with the latest generation of current small animal systems. Results attained demonstrate the potential for higher NECR with CZT based scanners in comparison to scintillator based animal systems.

  13. Monte Carlo based performance assessment of different animal PET architectures using pixellated CZT detectors

    Energy Technology Data Exchange (ETDEWEB)

    Visvikis, D. [INSERM U650, LaTIM, University Hospital Medical School, F-29609 Brest (France)]. E-mail: Visvikis.Dimitris@univ-brest.fr; Lefevre, T. [INSERM U650, LaTIM, University Hospital Medical School, F-29609 Brest (France); Lamare, F. [INSERM U650, LaTIM, University Hospital Medical School, F-29609 Brest (France); Kontaxakis, G. [ETSI Telecomunicacion Universidad Politecnica de Madrid, Ciudad Universitaria, s/n 28040, Madrid (Spain); Santos, A. [ETSI Telecomunicacion Universidad Politecnica de Madrid, Ciudad Universitaria, s/n 28040, Madrid (Spain); Darambara, D. [Department of Physics, School of Engineering and Physical Sciences, University of Surrey, Guildford (United Kingdom)

    2006-12-20

    The majority of present position emission tomography (PET) animal systems are based on the coupling of high-density scintillators and light detectors. A disadvantage of these detector configurations is the compromise between image resolution, sensitivity and energy resolution. In addition, current combined imaging devices are based on simply placing back-to-back and in axial alignment different apparatus without any significant level of software or hardware integration. The use of semiconductor CdZnTe (CZT) detectors is a promising alternative to scintillators for gamma-ray imaging systems. At the same time CZT detectors have the potential properties necessary for the construction of a truly integrated imaging device (PET/SPECT/CT). The aims of this study was to assess the performance of different small animal PET scanner architectures based on CZT pixellated detectors and compare their performance with that of state of the art existing PET animal scanners. Different scanner architectures were modelled using GATE (Geant4 Application for Tomographic Emission). Particular scanner design characteristics included an overall cylindrical scanner format of 8 and 24 cm in axial and transaxial field of view, respectively, and a temporal coincidence window of 8 ns. Different individual detector modules were investigated, considering pixel pitch down to 0.625 mm and detector thickness from 1 to 5 mm. Modified NEMA NU2-2001 protocols were used in order to simulate performance based on mouse, rat and monkey imaging conditions. These protocols allowed us to directly compare the performance of the proposed geometries with the latest generation of current small animal systems. Results attained demonstrate the potential for higher NECR with CZT based scanners in comparison to scintillator based animal systems.

  14. Simulation of single-event energy-deposition spreading in a hybrid pixellated detector for gamma imaging

    CERN Document Server

    Manach, E

    2002-01-01

    In the framework of the Medipix2 Collaboration, a new photon-counting chip is being developed made of a 256x256 array of 55 mu m-side square pixels. Although the chip was primarily developed for semiconductor X-ray imagers, we think that this type of device could be used in applications such as decommissioning of nuclear facilities where typical sources have gamma-ray energies in the range of a few hundred keV. In order to enhance the detection efficiency in this energy range, we envisage connecting the Medipix2 chip to a CdTe or CdZnTe substrate (at least 1 mm thick). The small pixel size, the thickness of the Cd(Zn)Te substrate and the high photon energy motivate us to estimate first the spatial energy spreading following a photon interaction inside the detector. Estimations were made using the MCNP Monte Carlo package by simulating the individual energy distribution for each primary photon interaction. As an illustration of our results, simulating a 660 keV gamma source, we found that there are two pixels ...

  15. Small pixel CZT detector for hard X-ray spectroscopy

    Science.gov (United States)

    Wilson, Matthew David; Cernik, Robert; Chen, Henry; Hansson, Conny; Iniewski, Kris; Jones, Lawrence L.; Seller, Paul; Veale, Matthew C.

    2011-10-01

    A new small pixel cadmium zinc telluride (CZT) detector has been developed for hard X-ray spectroscopy. The X-ray performance of four detectors is presented and the detectors are analysed in terms of the energy resolution of each pixel. The detectors were made from CZT crystals grown by the travelling heater method (THM) bonded to a 20×20 application specific integrated circuit (ASIC) and data acquisition (DAQ) system. The detectors had an array of 20×20 pixels on a 250 μm pitch, with each pixel gold-stud bonded to an energy resolving circuit in the ASIC. The DAQ system digitised the ASIC output with 14 bit resolution, performing offset corrections and data storage to disc in real time at up to 40,000 frames per second. The detector geometry and ASIC design was optimised for X-ray spectroscopy up to 150 keV and made use of the small pixel effect to preferentially measure the electron signal. A 241Am source was used to measure the spectroscopic performance and uniformity of the detectors. The average energy resolution (FWHM at 59.54 keV) of each pixel ranged from 1.09±0.46 to 1.50±0.57 keV across the four detectors. The detectors showed good spectral performance and uniform response over almost all pixels in the 20×20 array. A large area 80×80 pixel detector will be built that will utilise the scalable design of the ASIC and the large areas of monolithic spectroscopic grade THM grown CZT that are now available. The large area detector will have the same performance as that demonstrated here.

  16. A low mass pixel detector upgrade for CMS

    CERN Document Server

    Kaestli, Hans-Christian

    2010-01-01

    and commissioning of the present pixel detector, we intend to upgrade the whole pixel detector in 2015. The main focus is on lowering the material budget and adding more tracking points. We will present the design of a new low mass pixel system consisting of 4 barrel layers and 3 end cap disks on each side. The design comprises of thin detector modules and a lightweight mechanical support structure using CO2 cooling. In addition, large efforts have been made to move material from the services out of the tracking regi...

  17. Diamond and silicon pixel detectors in high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Tsung, Jieh-Wen

    2012-10-15

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

  18. Cumulative effects of Te precipitates in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

  19. DAQ Hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment was extended by about 12 million pixels with the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented by employing newly designed read-out hardware, which supports the full detector bandwidth even for calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  20. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    CERN Document Server

    Eisen, Y; Mardor, I

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used pla...

  1. New pixelized Micromegas detector for the COMPASS experiment

    CERN Document Server

    Neyret, Damien; Bedfer, Yann; Burtin, Etienne; d'Hose, Nicole; Giganon, Arnaud; Ketzer, Bernhard; Konorov, Igor; Kunne, Fabienne; Magnon, Alain; Marchand, Claude; Paul, Bernard; Platchkov, Stéphane; Vandenbroucke, Maxence

    2009-01-01

    New Micromegas (Micro-mesh gaseous detectors) are being developed in view of the future physics projects planned by the COMPASS collaboration at CERN. Several major upgrades compared to present detectors are being studied: detectors standing five times higher luminosity with hadron beams, detection of beam particles (flux up to a few hundred of kHz/mm^2, 10 times larger than for the present detectors) with pixelized read-out in the central part, light and integrated electronics, and improved robustness. Studies were done with the present detectors moved in the beam, and two first pixelized prototypes are being tested with muon and hadron beams in real conditions at COMPASS. We present here this new project and report on two series of tests, with old detectors moved into the beam and with pixelized prototypes operated in real data taking condition with both muon and hadron beams.

  2. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  3. Status of the CMS Phase I Pixel Detector Upgrade

    CERN Document Server

    Spannagel, Simon

    2015-01-01

    This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

  4. Monolithic CMOS pixel detector for international linear collider vertex detection

    Indian Academy of Sciences (India)

    J E Brau; O Igonkina; N Sinew; D Strom; C Baltay; W Emmet; H Neal; D Rabinowitz

    2007-12-01

    A monolithic CMS pixel detector is under development for an ILC experiment. This chronopixel array provides a time stamp resolution of one bunch crossing, a critical feature for background suppression. The status of this effort is summarized.

  5. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    Science.gov (United States)

    Lebrun, A.; Bignan, G.; Szabo, J. L.; Arenas-Carrasco, J.; Arlt, R.; Dubreuil, A.; Esmailpur Kazerouni, K.

    2000-07-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR) coupled to a gamma transport code (MCNP) allows us to predict and interpret the experimental data from CdZnTe detectors. Particularly, bremsstrahlung contribution to the gamma spectra is suggested and modeled. Calculation results indicate a good agreement between this hypothesis and the present measurements.

  6. A new CMS pixel detector for the LHC luminosity upgrade

    OpenAIRE

    Favaro, Carlotta; Collaboration, for the CMS

    2011-01-01

    The CMS inner pixel detector system is planned to be replaced during the first phase of the LHC luminosity upgrade. The plans foresee an ultra low mass system with four barrel layers and three disks on either end. With the expected increase in particle rates, the electronic readout chain will be changed for fast digital signals. An overview of the envisaged design options for the upgraded CMS pixel detector is given, as well as estimates of the tracking and vertexing performance.

  7. Optical studies of the internal electric field distributions of CdZnTe detectors under bias conditions

    International Nuclear Information System (INIS)

    The internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energy-band model of a semiconductor junction with a depletion layer was employed to understand the results

  8. Silicon Pixel Detectors for Synchrotron Applications

    CERN Document Server

    Stewart, Graeme Douglas

    Recent advances in particle accelerators have increased the demands being placed on detectors. Novel detector designs are being implemented in many different areas including, for example, high luminosity experiments at the LHC or at next generation synchrotrons. The purpose of this thesis was to characterise some of these novel detectors. The first of the new detector types is called a 3D detector. This design was first proposed by Parker, Kenney and Segal (1997). In this design, doped electrodes are created that extend through the silicon substrate. When compared to a traditional photodiode with electrodes on the opposing surfaces, the 3D design can combine a reasonable detector thickness with a small electrode spacing resulting in fast charge collection and limited charge sharing. The small electrode spacing leads to the detectors having lower depletion voltages. This, combined with the fast collection time, makes 3D detectors a candidate for radiation hard applications. These applications include the upgra...

  9. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sklyarchuk, V. [Chernivtsi National Univ. (Ukraine); Fochuk, p. [Chernivtsi National Univ. (Ukraine); Rarenko, I. [Chernivtsi National Univ. (Ukraine); Zakharuk, Z. [Chernivtsi National Univ. (Ukraine); Sklyarchuk, O. F. [Chernivtsi National Univ. (Ukraine); Bolotnikov, A. E. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. B. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  10. The Phase-1 upgrade of the CMS silicon pixel detector

    CERN Document Server

    Menichelli, Mauro

    2015-01-01

    The present CMS pixel detector will be replaced in the shutdown period 2016/17 by an upgraded version due to the following reasons: increased luminosity at reduced bunch spacing ( from 7 x 10 33 cm - 2 s - 1 at 50 ns bunch spacing to 2 x 10 34 cm - 2 s - 1 at 25 ns bunch spacing) in the LHC , and radiation damage effects that will significantly degrade the present detector. The new upgraded detector will have higher tracking efficiency and lower mass with four barrel layer and three forward/backward disks to provide higher hit pixel coverage out to pseudorapidities of ±2.5. In this paper we will describe the new pixel detector focus ing mostly on the barrel detector design, construction and expected performances

  11. Vertex measurement at a hadron collider. The ATLAS pixel detector

    International Nuclear Information System (INIS)

    The ATLAS Pixel Detector is the innermost layer of the ATLAS tracking system and will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of the Pixel Detector near the interaction point requires excellent radiation hardness, fast read-out, mechanical and thermal robustness, good long-term stability, all combined with a low material budget. The new design concepts used to meet the challenging requirements are discussed with their realisation in the Pixel Detector, followed by a description of a refined and extensive set of measurements to assess the detector performance during and after its construction. (orig.)

  12. The Phase-1 Upgrade of the CMS Pixel Detector

    CERN Document Server

    Klein, Katja

    2016-01-01

    The CMS experiment features a pixel detector with three barrel layers and two disks per side, corresponding to an active silicon area of 1\\,m$^2$. The detector delivered high-quality data during LHC Run~1. However, the CMS pixel detector was designed for the nominal instantaneous LHC luminosity of $1\\cdot 10^{34}\\,$cm$^{-2}$s$^{-1}$. It is expected that the instantaneous luminosity will increase and reach twice the design value before Long Shutdown 3, scheduled for 2023. Under such conditions, the present readout chip would suffer from data loss due to buffer overflow, leading to significant inefficiencies of up to~16\\,\\%. The CMS collaboration is presently constructing a new pixel detector to replace the present device during the winter shutdown 2016/2017. The design of this new detector will be outlined, the construction status summarized and the performance described.

  13. First Results of the Pixel Detector Performance in 2015

    CERN Document Server

    CMS Collaboration

    2015-01-01

    The CMS pixel detector consists of 66 million pixels arranged in three cylindric layers in the barrel region and two end-cap disks on each side of the barrel. It is used for seeding in track reconstruction. It is also the most important tool for vertex reconstruction. This report documents the good fraction of the pixel detector at the start of data-taking in 2015, its efficiency at low luminosity and 50 ns bunch-spacing, and the first measurements of the Lorentz-angle. Details are also given on the timing adjustment in the first collisions, and verification of the full depletion voltage.

  14. DAQ hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed read-out hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  15. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  16. DAQ hardware and software development for the ATLAS Pixel Detector

    Science.gov (United States)

    Stramaglia, Maria Elena

    2016-07-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed readout hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the readout boards. The same boards will be used to upgrade the readout bandwidth for the two outermost barrel layers of the ATLAS Pixel Detector. We present the IBL readout hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel Detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  17. Challenges of small-pixel infrared detectors: a review

    Science.gov (United States)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2016-04-01

    In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology—HgCdTe material systems and III-V materials (mainly barrier detectors)—have been investigated.

  18. Micro-pixel accuracy centroid displacement estimation and detector calibration

    CERN Document Server

    Zhai, Chengxing; Goullioud, Renaud; Nemati, Bijan

    2011-01-01

    Precise centroid estimation plays a critical role in accurate astrometry using telescope images. Conventional centroid estimation fits a template point spread function (PSF) to the image data. Because the PSF is typically not known to high accuracy due to wavefront aberrations and uncertainties in optical system, a simple Gaussian function is commonly used. PSF knowledge error leads to systematic errors in the conventional centroid estimation. In this paper, we present an accurate centroid estimation algorithm by reconstructing the PSF from well sampled (above Nyquist frequency) pixelated images. In the limit of an ideal focal plane array whose pixels have identical response function (no inter-pixel variation), this method can estimate centroid displacement between two 32$\\times$32 images to sub-micropixel accuracy. Inter-pixel response variations exist in real detectors, {\\it e.g.}~CCDs, which we can calibrate by measuring the pixel response of each pixel in Fourier space. The Fourier transforms of the inter...

  19. Characteristics of a Frisch collar grid CdZnTe radiation detector grown by low-pressure Bridgman method

    Science.gov (United States)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    A single-polarity charge-sensing method was studied by using a CdZnTe Frisch collar grid detector grown by using a low-pressure Bridgeman furnace at the Korea Atomic Energy Research Institute (KAERI). The Frisch collar grid CdZnTe detector has an active volume of 5 × 5 × 10 mm3, and was fabricated from a single crystal, Teflon tape and copper tape used as a Frisch collar grid. A room-temperature energy resolution of 6% full width at half maximum (FWHM) was obtained for the 662keV peak of Cs-137 without any additional electrical corrections. The detector's fabrication process is described, and its characteristics are discussed. Finally, the charge transport properties and gamma-ray energy resolution of the fabricated Frisch collar grid detector are compared with those of two other Frisch collar detectors grown by using different crystal growth methods and purchased from eV-products and Redlen technology.

  20. Geometrical and total efficiencies of CdZnTe rectangular parallelepiped detector using arbitrary positioned point, plane, and volumetric sources

    Science.gov (United States)

    Hamzawy, A.; Badawi, Mohamed S.; Thabet, Abouzeid A.; Gouda, Mona M.; El-Khatib, Ahmed M.; Abbas, Mahmoud I.

    2016-02-01

    Gamma-ray detectors are widely used in many fields like environmental measurements, medicine, space science, and industry, where the detector geometrical, total, photopeak efficiencies and peak-to-total ratio could be required. The calculation of the detector efficiency depends mainly on the value of the geometrical efficiency, which depends on the solid angle subtended by the source-detector system. The present work introduces a direct analytical method to calculate the geometrical and total efficiencies of CdZnTe gamma-ray detector using off-axis isotropic radiating γ-ray [point, disk, and cylindrical] sources. To test the validity of the present work, the results are compared with some published data and also to prove how much it is important to determine the efficiency of difficult gamma-ray detection arrangement.

  1. A low mass pixel detector upgrade for CMS

    CERN Document Server

    Kästli, H C

    2010-01-01

    The CMS pixel detector has been designed for a peak luminosity of 10^34cm-2s-1 and a total dose corresponding to 2 years of LHC operation at a radius of 4 cm from the interaction region. Parts of the pixel detector will have to be replaced until 2015. The detector performance will be degraded for two reasons: radiation damage of the innermost layers and the planned increase of the LHC peak luminosity by a factor of 2-3. Based on the experience in planning, constructing and commissioning of the present pixel detector, we intend to upgrade the whole pixel detector in 2015. The main focus is on lowering the material budget and adding more tracking points. We will present the design of a new low mass pixel system consisting of 4 barrel layers and 3 end cap disks on each side. The design comprises of thin detector modules and a lightweight mechanical support structure using CO2 cooling. In addition, large efforts have been made to move material from the services out of the tracking region.

  2. Spectroscopic X-ray imaging with photon counting pixel detectors

    CERN Document Server

    Tlustos, L

    2010-01-01

    Single particle counting hybrid pixel detectors simultaneously provide low noise, high granularity and high readout speed and make it possible to build detector systems offering high spatial resolution paired with good energy resolution. A limiting factor for the spectroscopic performance of such detector systems is charge sharing between neighbouring pixels in the sensor part of the detector. The signal spectrum at the collection electrodes of the readout electronics deviates significantly from the photonic spectrum when planar segmented sensor geometries are used. The Medipix3 implements a novel, distributed signal processing architecture linking neighbouring pixels and aims at eliminating the spectral distortion produced in the sensor by charge sharing and at reducing the impact of fluorescence photons generated in the sensor itself. Preliminary results from the very first Medipix3 readouts bump bonded to 300 pm Si sensor are presented. Material reconstruction is a possible future application of spectrosco...

  3. The Level 0 Pixel Trigger System for the ALICE Silicon Pixel Detector: implementation, testing and commissioning

    CERN Document Server

    Aglieri-Rinella, G

    2008-01-01

    The ALICE Silicon Pixel Detector transmits 1200 Fast-OR signals every 100 ns on 120 optical readout channels. They indicate the presence of at least one hit in the pixel matrix of each readout chip. The ALICE Level 0 Pixel Trigger System extracts them, processes them and delivers an input signal to the Central Trigger Processor for the first level trigger decision within a latency of 800 ns. This paper describes tests and measurements made on the system during the qualification and commissioning phases. These included Bit Error Rate tests on the Fast-OR data path, the measurement of the overall process latency and the recording of calibration data with cosmic rays. The first results of the operation of the Pixel Trigger System with the SPD detector in the ALICE experiment are also presented.

  4. Hybrid Pixel Detectors for gamma/X-ray imaging

    Science.gov (United States)

    Hatzistratis, D.; Theodoratos, G.; Zografos, V.; Kazas, I.; Loukas, D.; Lambropoulos, C. P.

    2015-09-01

    Hybrid pixel detectors are made by direct converting high-Z semi-insulating single crystalline material coupled to complementary-metal-oxide semiconductor (CMOS) readout electronics. They are attractive because direct conversion exterminates all the problems of spatial localization related to light diffusion, energy resolution, is far superior from the combination of scintillation crystals and photomultipliers and lithography can be used to pattern electrodes with very fine pitch. We are developing 2-D pixel CMOS ASICs, connect them to pixilated CdTe crystals with the flip chip and bump bonding method and characterize the hybrids. We have designed a series of circuits, whose latest member consists of a 50×25 pixel array with 400um pitch and an embedded controller. In every pixel a full spectroscopic channel with time tagging information has been implemented. The detectors are targeting Compton scatter imaging and they can be used for coded aperture imaging too. Hybridization using CMOS can overcome the limit put on pixel circuit complexity by the use of thin film transistors (TFT) in large flat panels. Hybrid active pixel sensors are used in dental imaging and other applications (e.g. industrial CT etc.). Thus X-ray imaging can benefit from the work done on dynamic range enhancement methods developed initially for visible and infrared CMOS pixel sensors. A 2-D CMOS ASIC with 100um pixel pitch to demonstrate the feasibility of such methods in the context of X-ray imaging has been designed.

  5. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  6. The CMS pixel detector and challenges for its upgrade

    CERN Document Server

    Bean, A

    2009-01-01

    The CMS pixel detector was installed in July 2008 in the innermost region of CMS. It consists of 66M pixels of 100um*150um size over 3 barrel layers and 2 forward disks. The pixel system has been successfully commissioned. Over 80K muon tracks were taken during the CMS cosmic runs and the detector is ready for the first physics run. The pixel detector, so close to the interaction point, will be exposed to a very high radiation dose. The estimation is that the first barrel layer, located at 4.3 cm from the beam pipe, after 3 years of LHC running at full luminosity, will become inefficient for position resolution reconstruction. For this reason, a substitution of a new pixel detector in 2014 has been already scheduled. At the same time an LHC luminosity upgrade is also planned. While a simple rebuild of the current detector could be done, the expectation is to design a new one, optimized for higher luminosity. This paper describes the present system and its performance as well as possible solutions for the upgr...

  7. Initial Measurements on Pixel Detector Modules for the ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Delicate conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel Detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming Pixel Detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation for silicon planar and 3D pixel sensors, which give a first impression on the charge collection properties of the different sensor technologies, are presented.

  8. Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias

    International Nuclear Information System (INIS)

    This paper describes the use of the Pockels electro-optic effect to both visualize and measure the internal electric field present within CdZnTe detectors under normal bias conditions. Use was made of a silicon charge coupled device (CCD), as an image sensor, in conjunction with a 940 nm LED to illuminate a 3x3x5 mm detector crystal with polarized infra-red light. The experiment was arranged so that a x40 image of the crystal showing a contour plot of electric field intensity could be generated. Further, more precise E-field measurements, were obtained using a 1.2microm laser diode (LD) and a germanium photodiode detector. Together these experiments indicate substantially nonuniform electric fields within the detector crystals used

  9. Small-Scale Readout Systems Prototype for the STAR PIXEL Detector

    OpenAIRE

    Szelezniak, Michal A.

    2008-01-01

    A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations of MAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of t...

  10. Pulse-shape discrimination of surface events in CdZnTe detectors for the COBRA experiment

    CERN Document Server

    Fritts, Matthew; Durst, Jürgen; Ebert, Joachim; Gößling, Claus; Göpfert, Thomas; Gehre, Daniel; Hagner, Caren; Heidrich, Nadine; Homann, Michael; Köttig, Tobias; Neddermann, Till; Oldorf, Christian; Quante, Thomas; Rajek, Silke; Reinecke, Oscar; Schulz, Oliver; Timm, Jan; Wonsak, Björn; Zuber, Kai

    2014-01-01

    Events near the cathode and anode surfaces of a coplanar grid CdZnTe detector are identifiable by means of the interaction depth information encoded in the signal amplitudes. However, the amplitudes cannot be used to identify events near the lateral surfaces. In this paper a method is described to identify lateral surface events by means of their pulse shapes. Such identification allows for discrimination of surface alpha particle interactions from more penetrating forms of radiation, which is particularly important for rare event searches. The effectiveness of the presented technique in suppressing backgrounds due to alpha contamination in the search for neutrinoless double beta decay with the COBRA experiment is demonstrated.

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    OpenAIRE

    Anna Maria Mancini; Andrea Zappettini; Ezio Caroli; Leonardo Abbene; Stefano Del Sordo; Pietro Ubertini

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status...

  12. Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fahim Farah, Fahim Farah [Northwestern U. (main); Deptuch, Grzegorz W. [Fermilab; Hoff, James R. [Fermilab; Mohseni, Hooman [Northwestern U. (main)

    2015-08-28

    The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

  13. Calibration analysis software for the ATLAS Pixel Detector

    Science.gov (United States)

    Stramaglia, Maria Elena

    2016-07-01

    The calibration of the ATLAS Pixel Detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel Detector scans and analyses is called calibration console. The introduction of a new layer, equipped with new FE-I4 chips, required an update of the console architecture. It now handles scans and scan analyses applied together to chips with different characteristics. An overview of the newly developed calibration analysis software will be presented, together with some preliminary results.

  14. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the Pixel detector fulfills two main purposes: to tune front-end registers for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied toghether to chips with dierent characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  15. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the ATLAS Pixel detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied together to chips with different characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  16. Characterization of 36 pixel silicon PAD detectors

    International Nuclear Information System (INIS)

    As silicon detectors offer good energy resolution and high reliability, these are ideally suited for tracking and calorimetric applications in nuclear and particle physics experiments. The band gap of silicon is small enough to produce a good number of charge carriers per unit energy loss of the ionizing particles. Further, the high material density (2.33 g/cm3) leads to a large energy loss per traversed length for ionizing particle (3.8 MeV/cm for a minimum ionizing particle). The semiconductor fabrication technology is now mature enough to produce low leakage and fast response detectors, as the mobility degradation is minimum due to doping

  17. Thick Pixelated CZT Detectors With Isolated Steering Grids

    CERN Document Server

    Jung, I; Perkins, J S; Krawczynski, H; Matteson, J; Skelton, R T; Bürger, A; Groza, M

    2005-01-01

    We explore the possibility to improve the performance of 0.5 cm thick Cadmium Zinc Telluride (CZT) detectors with the help of steering grids on the anode side of the detectors. Steering grids can improve the energy resolution of CZT detectors by enhancing the small pixel effect; furthermore, they can increase their detection efficiency by steering electrons to the anode pixels which otherwise would drift to the area between pixels. Previously, the benefit of steering grids had been compromised by additional noise associated with currents between the steering grids and the anode pixels. We use thin film deposition techniques to isolate the steering grid from the CZT substrate by a 150 nm thick layer of the isolator Aluminiumoxide. While the thin layer does not affect the beneficial effect of the steering grid on the weighting potentials and the electric field inside the detector, it suppresses the currents between the steering grid and the anode pixels. In this contribution, we present first results from a 2 x...

  18. Radiation damage monitoring of the ATLAS pixel detector

    CERN Document Server

    Seidel, Sally; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module record of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.

  19. A prototype hybrid pixel detector ASIC for the CLIC experiment

    CERN Document Server

    Valerio, P; Arfaoui, S; Ballabriga, R; Benoit, M; Bonacini, S; Campbell, M; Dannheim, D; De Gaspari, M; Felici, D; Kulis, S; Llopart, X; Nascetti, A; Poikela, T; Wong, W S

    2014-01-01

    A prototype hybrid pixel detector ASIC specifically designed to the requirements of the vertex detector for CLIC is described and first electrical measurements are presented. The chip has been designed using a commercial 65 nm CMOS technology and comprises a matrix of 64x64 square pixels with 25 μm pitch. The main features include simultaneous 4-bit measure- ment of Time-over-Threshold (ToT) and Time-of-Arrival (ToA) with 10 ns accuracy, on-chip data compression and power pulsing capability.

  20. CdZnTe strip detector SPECT imaging with a slit collimator

    International Nuclear Information System (INIS)

    In this paper, we propose a CdZnTe rotating and spinning gamma camera attached with a slit collimator. This imaging system acquires convergent planar integrals of a radioactive distribution. Two analytical image reconstruction algorithms are proposed. Preliminary phantom studies show that our small CdZnTe camera with a slit collimator outperforms a larger NaI(Tl) camera with a pinhole collimator in terms of spatial resolution in the reconstructed images. The main application of this system is small animal SPECT imaging

  1. Overview of the BTeV Pixel Detector

    International Nuclear Information System (INIS)

    BTeV is a new Fermilab beauty and charm experiment designed to operate in the CZero region of the Tevatron collider. Critical to the success of BTeV is its pixel detector. The unique features of this pixel detector include its proximity to the beam, its operation with a beam crossing time of 132 ns, and the need for the detector information to be read out quickly enough to be used for the lowest level trigger. This talk presents an overview of the pixel detector design, giving the motivations for the technical choices made. The status of the current RandD on detector components is also reviewed. Additional Pixel 2002 talks on the BTeV pixel detector are given by Dave Christian[1], Mayling Wong[2], and Sergio Zimmermann[3]. Table 1 gives a selection of pixel detector parameters for the ALICE, ATLAS, BTeV, and CMS experiments. Comparing the progression of this table, which I have been updating for the last several years, has shown a convergence of specifications. Nevertheless, significant differences endure. The BTeV data-driven readout, horizontal and vertical position resolution better than 9 (micro)m with the ± 300 mr forward acceptance, and positioning in vacuum and as close as 6 mm from the circulating beams remain unique. These features are driven by the physics goals of the BTeV experiment. Table 2 demonstrates that the vertex trigger performance made possible by these features is requisite for a very large fraction of the B meson decay physics which is so central to the motivation for BTeV. For most of the physics quantities of interest listed in the table, the vertex trigger is essential. The performance of the BTeV pixel detector may be summarized by looking at particular physics examples; e.g., the Bs meson decay Bs → Ds- K+. For that decay, studies using GEANT3 simulations provide quantitative measures of performance. For example, the separation between the Bs decay point and the primary proton-antiproton interaction can be measured with an rms

  2. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Bates, Richard L., E-mail: richard.bates@glasgow.ac.uk [SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J. [SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I. [The University of Liverpool, Liverpool (United Kingdom); Brown, S.; Pater, J. [The Univiersty of Manchester, Manchester (United Kingdom)

    2013-12-11

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 10{sup 16} 1 MeV n{sub eq} cm{sup −2}. The area of the pixel detector system will be over 5 m{sup 2} and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  3. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    Science.gov (United States)

    Bates, Richard L.; Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J.; Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I.; Brown, S.; Pater, J.

    2013-12-01

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm-2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  4. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    International Nuclear Information System (INIS)

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm−2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported

  5. Design Methodology: ASICs with complex in-pixel processing for Pixel Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fahim, Farah [Fermilab

    2014-10-31

    The development of Application Specific Integrated Circuits (ASIC) for pixel detectors with complex in-pixel processing using Computer Aided Design (CAD) tools that are, themselves, mainly developed for the design of conventional digital circuits requires a specialized approach. Mixed signal pixels often require parasitically aware detailed analog front-ends and extremely compact digital back-ends with more than 1000 transistors in small areas below 100μm x 100μm. These pixels are tiled to create large arrays, which have the same clock distribution and data readout speed constraints as in, for example, micro-processors. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout.

  6. Study on the spectrum improvement of a capacitive Frisch grid structure for CdZnTe Detector

    International Nuclear Information System (INIS)

    The design and fabrication of a capacitive Frisch grid structure for CdZnTe (CZT) detector have been investigated in this paper. The simulation results show that a bigger ratio of L/H (metal screen ring length/device height) with the ratio of εr/d at 20 mm-1 (relative dielectric constant/the thickness of insulation layer) helps to compress the weighting potential towards the anode, and therefore to improve the energy resolution as showed by the experimental results. The capacitive Frisch grid structures significantly improve spectroscopic performance of planar CZT detectors. In particular, a passivation layer obtained by two-step passivation processing, combined with a Teflon tape was used for an insulated layer of the capacitive Frisch grid detector which can be applied at high voltage. A typical FWHM energy resolution of 4.58% at 662 keV was obtained for a device with dimensions of 5 x 5 x 10 mm3.

  7. 3D electronics for hybrid pixel detectors – TWEPP-09

    CERN Document Server

    Godiot, S; Chantepie, B; Clémens, J C; Fei, R; Fleury, J; Fougeron, D; Garcia-Sciveres, M; Hemperek, T; Karagounis, M; Krueger, H; Mekkaoui, A; Pangaud, P; Rozanov, A; Wermes, N

    2009-01-01

    Future hybrid pixel detectors are asking for smaller pixels in order to improve spatial resolution and to deal with an increasing counting rate. Facing these requirements is foreseen to be done by microelectronics technology shrinking. However, this straightforward approach presents some disadvantages in term of performances and cost. New 3D technologies offer an alternative way with the advantage of technology mixing. For the upgrade of ATLAS pixel detector, a 3D conception of the read-out chip appeared as an interesting solution. Splitting the pixel functionalities into two separate levels will reduce pixel size and open the opportunity to take benefit of technology's mixing. Based on a previous prototype of the read-out chip FE-I4 (IBM 130nm), this paper presents the design of a hybrid pixel read-out chip using threedimensional Tezzaron-Chartered technology. In order to disentangle effects due to Chartered 130nm technology from effects involved by 3D architecture, a first translation of FEI4 prototype had ...

  8. Readout chip for the CMS pixel detector upgrade

    International Nuclear Information System (INIS)

    For the CMS experiment a new pixel detector is planned for installation during the extended shutdown in winter 2016/2017. Among the changes of the detector modified front end electronics will be used for higher efficiency at peak luminosity of the LHC and faster readout. The first prototype versions of the new readout chip have been designed and produced. The results of qualification and calibration for the new chip are presented in this paper

  9. Readout chip for the CMS pixel detector upgrade

    Science.gov (United States)

    Rossini, Marco

    2014-11-01

    For the CMS experiment a new pixel detector is planned for installation during the extended shutdown in winter 2016/2017. Among the changes of the detector modified front end electronics will be used for higher efficiency at peak luminosity of the LHC and faster readout. The first prototype versions of the new readout chip have been designed and produced. The results of qualification and calibration for the new chip are presented in this paper.

  10. Monitoring Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Schorlemmer, André Lukas; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

    2014-11-05

    Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

  11. ATLAS Pixel Detector Design For HL-LHC

    CERN Document Server

    Smart, Ben; The ATLAS collaboration

    2016-01-01

    The ATLAS Inner Detector will be replaced for the High-Luminosity LHC (HL-LHC) running in 2026. The new Inner Detector will be called the Inner Tracker (ITk). The ITk will cover an extended eta-range: at least to |eta|<3.2, and likely up to |eta|<4.0. The ITk will be an all-Silicon based detector, consisting of a Silicon strip detector outside of a radius of 362mm, and a Silicon pixel detector inside of this radius. Several novel designs are being considered for the ITk pixel detector, to cope with high-eta charged particle tracks. These designs are grouped into 'extended' and 'inclined' design-types. Extended designs have long pixel staves with sensors parallel to the beamline. High-eta particles will therefore hit these sensors at shallow angles, leaving elongated charge clusters. The length of such a charge cluster can be used to estimate the angle of the passing particle. This information can then be used in track reconstruction to improve tracking efficiency and reduce fake rates. Inclined designs ...

  12. KPIX a pixel detector imaging chip

    CERN Document Server

    Cadeddu, S; Caria, M

    2002-01-01

    We present a VLSI custom device, named KPIX, developed in a 0.6 mu m CMOS technology. The circuit is dedicated to readout solid-state detectors covering large areas (on the order of square centimetre) and featuring very small currents. KPIX integrates 1024 channels (current amplifiers) and 8 ADCs on a 15.5x4 mm sup 2 area. Both an analogue and digital readout are allowed, with a 10 bit amplitude resolution. Amplifiers are organized in 8 columns of 128 rows. When choosing the digital or the analogue readout, the complete set of channels can be read out in about 30 ms. The specific design of the amplification cells allows to measure very small input current levels, on the order of fractions of pico-ampere. Power consumption has also been kept at the level of 80 mu W per cell and 150 mW (peak value) in total. The specific chip architecture and geometry allow use of many KPIX circuits together in order to serve a large detector sensitive area. The KPIX structure is presented along with some measurements character...

  13. Initial Measurements On Pixel Detector Modules For The ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Sophisticated conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming pixel detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation, which give a first impression on the charge collection properties of the different sensor technologies are presented.

  14. The first bump-bonded pixel detectors on CVD diamond

    Science.gov (United States)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

    1999-11-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

  15. Studies of mono-crystalline CVD diamond pixel detectors

    Science.gov (United States)

    Bugg, W.; Hollingsworth, M.; Spanier, S.; Yang, Z.; Bartz, E.; Doroshenko, J.; Hits, D.; Schnetzer, S.; Stone, R.; Atramentov, O.; Patel, R.; Barker, A.; Hall-Wilton, R.; Ryjov, V.; Farrow, C.; Pernicka, M.; Steininger, H.; Johns, W.; Halyo, V.; Harrop, B.; Hunt, A.; Marlow, D.; Hebda, P.

    2011-09-01

    The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLT's mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope.

  16. Studies of mono-crystalline CVD diamond pixel detectors

    CERN Document Server

    Bartz, E; Atramentov, O; Yang, Z; Hall-Wilton, R; Schnetzer, S; Patel, R; Bugg, W; Hebda, P; Halyo, V; Hunt, A; Marlow, D; Steininger, H; Ryjov, V; Hits, D; Spanier, S; Pernicka, M; Johns, W; Doroshenko, J; Hollingsworth, M; Harrop, B; Farrow, C; Stone, R

    2011-01-01

    The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLTs mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope. Published by Elsevier B.V.

  17. The first bump-bonded pixel detectors on CVD diamond

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Fried, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Palmieri, V G; Pan, L S; Peitz, A; Pernicka, Manfred; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Steuerer, J; Stone, R; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Turchetta, R; Vittone, E; Wagner, A; Walsh, A M; Wedenig, R; Weilhammer, Peter; Zeuner, W; Ziock, H J; Zöller, M; Charles, E; Ciocio, A; Dao, K; Einsweiler, Kevin F; Fasching, D; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Milgrome, O; Palaio, N; Richardson, J; Sinervo, P K; Zizka, G

    1999-01-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98565544f the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 mu m was observed, consistent with expectations given the detector pitch. (13 refs).

  18. The first bump-bonded pixel detectors on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W. E-mail: william@physics.utoronto.ca; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G

    1999-11-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 {mu}m was observed, consistent with expectations given the detector pitch.

  19. The first bump-bonded pixel detectors on CVD diamond

    International Nuclear Information System (INIS)

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch

  20. CMS Technical Design Report for the Pixel Detector Upgrade

    CERN Document Server

    Dominguez, A; Arndt, K; Bacchetta, N; Ball, A; Bartz, E; Bertl, W; Bilei, G M; Bolla, G; Cheung, H W K; Chertok, M; Costa, S; Demaria, N; Dominguez, A; Ecklund, K; Erdmann, W; Gill, K; Hall, G; Harder, K; Hartmann, F; Horisberger, R; Johns, W; Kaestli, H C; Klein, K; Kotlinski, D; Kwan, S; Pesaresi, M; Postema, H; Rohe, T; Schäfer, C; Starodumov, A; Streuli, S; Tricomi, A; Tropea, P; Troska, J; Vasey, F; Zeuner, W

    2012-01-01

    The original design goal of the LHC was to operate at $1 \\times 10^{34}$ cm$^{−2}s^{−1}$ with 25 ns bunch spacing, where approximately 25 simultaneous inelastic collisions per crossing (“pile-up”) occur. With the upgrade of the accelerators, the lumi- nosity and pile-up will more than double. The current pixel detector is crucial to charged particle tracking, but was not designed to perform effectively in such collision conditions and the physics program of CMS would suffer as a result. We propose to replace the current pixel tracker with a new high efficiency and low mass detector with four barrel layers and three forward/backward disks to provide four-hit pixel coverage out to pseudorapidities of ±2.5. This new detector will meet or exceed the original design specifications in these high luminosity environments. In this report, we provide details on the design, construction and installation of the upgraded pixel detector as well as estimates of its expected performance.

  1. Pixelated Single-crystal Diamond Detector for fast neutron measurements

    International Nuclear Information System (INIS)

    Single-crystal Diamond Detectors (SDDs), due to their high radiation hardness, fast response time and small size, are good candidates as fast neutron detectors in those environments where the high neutron flux is an issue, such as spallation neutron sources and the next generation thermonuclear fusion plasmas, i.e. the ITER experiment. Neutron detection in SDDs is based on the collection of electron-hole pairs produced by charged particles generated by neutron interactions with 12C. Recent measurements have demonstrated the SDD capability of measuring the neutron flux with a good energy resolution and at high rates. In this work a novel detector based on a 12-pixels SDD matrix will be presented. Each pixel is equipped with an independent electronic chain: the fast shaping preamplifier coupled to a digitizer is able to combine the high rate capability and the good energy resolution. Two CAEN digitizers are compared and the possibility of performing good energy resolution measurements (<2%) and at high rates (>1 MHz per channel) is described. Each pixel was characterized and calibrated using an 241Am source: the energy resolution was evaluated and gives a mean value of 1.73% at 5.5 MeV. The good energy resolution achieved and its uniformity between pixels are the demonstration of the capability of this novel detector as a spectrometer. This system will be installed during the next Deuterium-Tritium campaign on a collimated vertical line of sight at JET for 14 MeV neutron measurements

  2. Properties of Neutron Pixel Detector Based on Medipix-2 Device

    Czech Academy of Sciences Publication Activity Database

    Jakůbek, J.; Holý, T.; Lehmann, E.; Pospíšil, S.; Uher, J.; Vacík, J.; Vavřík, Daniel

    Řím : Nuclear & Plasma Sciences Society, 2004, s. 54. [Nuclear Science Symposium IEEE 2003. Řím (IT), 16.10.2004-22.10.2004] Institutional research plan: CEZ:AV0Z2071913 Keywords : neutron radiography * neutron pixel detector * digital radiography Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  3. Spatial Resolution of the Medipix-2 as Neutron Pixel Detector

    Czech Academy of Sciences Publication Activity Database

    Jakůbek, J.; Holý, T.; Lehmann, E.; Pospíšil, S.; Uher, J.; Vacík, J.; Vavřík, Daniel

    Glasgow, Scotland : Glasgow University, 2004, s. 1. [International Workshop on Radiation Imaging Detectors /6./. Glasgow, Scotland (GB), 25.07.2004-29.07.2004] Institutional research plan: CEZ:AV0Z2071913 Keywords : Neutron Radiography * Digital Radiography * Single Photon Counting Pixel Device Subject RIV: BF - Elementary Particles and High Energy Physics

  4. Spatial resolution of Medipix-2 device as neutron pixel detector

    Czech Academy of Sciences Publication Activity Database

    Jakůbek, J.; Holý, T.; Lehmann, E.; Pospíšil, S.; Uher, J.; Vacík, Jiří; Vavřík, D.

    2005-01-01

    Roč. 546, - (2005), s. 164-169. ISSN 0168-9002 R&D Projects: GA MŠk(CZ) 1P04LA211 Institutional research plan: CEZ:AV0Z10480505 Keywords : neutron detection * pixel detectors * neutronography Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.224, year: 2005

  5. A Sealed Gas Pixel Detector for X-ray Astronomy

    OpenAIRE

    Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L; Brez, A.; Latronico, L; Omodei, N.; Razzano, M.; Massai, M. M.; Pinchera, M.; Pesce-Rollins, M.; SGRO, C.; Costa, E; P. Soffitta(a); Sipila, H.

    2006-01-01

    We report on the results of a new, sealed, Gas Pixel Detector. The very compact design and the absence of the gas flow system, make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high gain (>1000), fine pitch GEM that matches the...

  6. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    International Nuclear Information System (INIS)

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors

  7. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    CERN Document Server

    Turchetta, R

    2006-01-01

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors.

  8. Optical Links for the ATLAS Pixel Detector

    CERN Document Server

    Gregor, Ingrid-Maria

    In der vorliegenden Dissertation wird eine strahlentolerante optische Datenstrecke mit hoher Datenrate für den Einsatz in dem Hochenergiephysikexperiment Atlas am Lhc Beschleuniger entwickelt. Da die Lhc-Experimente extremen Strahlenbelastungen ausgesetzt sind, müssen die Komponenten spezielle Ansprüche hinsichtlich der Strahlentoleranz erfüllen. Die Qualifikation der einzelnen Bauteile wurde im Rahmen dieser Arbeit durchgeführt. Die zu erwartenden Fluenzen im Atlas Inner Detector für Silizium und Gallium Arsenid (GaAs) wurden berechnet. Siliziumbauteile werden einer Fluenz von bis zu 1.1.1015neq /cm2 in 1 MeV äquivalenten Neutronen ausgesetzt sein, wohingegen GaAs Bauteile bis zu 7.8.1015neq /cm2 ausgesetzt sein werden. Die Strahlentoleranz der einzelnen benötigten Komponenten wie z.B. der Laserdioden sowie der jeweiligen Treiberchips wurde untersucht. Sowohl die Photo- als auch die Laserdioden haben sich als strahlentolerant für die Fluenzen an dem vorgesehenen Radius erwiesen. Aus de...

  9. Compensation of radiation damages for SOI pixel detector via tunneling

    CERN Document Server

    Yamada, Miho; Kurachi, Ikuo

    2015-01-01

    We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionization damages (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and difficulty of handling. We studied compensation of TID effects by tunneling using a high-voltage. For decrease of trapped holes, applied high-voltage to buried p-well which is under oxide layer to inject the electrons into the oxide layer.In this report, recent progress of this study is shown.

  10. GaAs Medipix2 hybrid pixel detector

    CERN Document Server

    Kostamo, P; Vähänen, S; Tlustos, L; Fröjdh, C; Campbell, M; Zhilyaev, Y; Lipsanen, H

    2008-01-01

    A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

  11. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Rubinskiy, I

    2015-01-01

    Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

  12. Development of a counting pixel detector for 'Digitales Roentgen'

    International Nuclear Information System (INIS)

    The development of a single photon counting X-ray imaging detector for medical applications using hybrid pixel detectors is reported. The electronics development from the first prototype derived from detector development for particle physics experiments (ATLAS) to the imaging chip MPEC (multi picture element counters) for medical applications is described. This chip consists of 32 x 32 pixels of 200 μm x 200 μm size, each containing the complete read out electronics, i.e. an amplifier, two discriminators with adjustable thresholds and two 18-bit linear feedback shift-counters allowing energy windowing for contrast increase. Results on electronics performance are shown as well as measurements with several semiconductor materials (Si, GaAs, CdTe). Important aspects like detection efficiency, sensor homogeneity, linearity and spatial resolution are discussed. (orig.)

  13. Pixel hybrid photon detectors for the ring imaging Cherenkov detectors of LHCb

    CERN Document Server

    Somerville, L

    2005-01-01

    A Pixel Hybrid Photon Detector (pixel HPD) has been developed for the LHCb Ring Imaging Cherenkov (RICH) detectors. The pixel HPD is a vacuum tube with a multi-alkali photocathode, high-voltage cross- focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a CMOS readout chip; the readout chip is thus fully encapsulated in the device. The pixel HPD fulfils the stringent requirements for the RICH detectors of LHCb, combining single photon sensitivity, high signal-to-noise ratio and fast readout with an ~8cm diameter active area and an effective pixel size of 2.5mm 2.5mm at the photocathode. The performance and characteristics of two prototype pixel HPDs have been studied in laboratory measurements and in recent beam tests. The results of all measurements agree with expectations and fulfil the LHCb RICH requirements. In readiness for production of the ~500pixel HPDs for the RICH detectors, a test programme was designed and implemented to ensure component quality control at eac...

  14. Parallel readout of two-element CdZnTe detectors with real-time digital signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhubin; Wang Linjun; Qin Kaifeng; Min Jiahua; Zhang Jijun; Liang Xiaoyan; Huang Jian; Tang Ke; Xia Yiben, E-mail: ljwang@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

    2010-12-15

    Readout electronics, especially digital electronics, for two-element CdZnTe (CZT) detectors in parallel are developed. The preliminary results show the detection efficiency of the two-element CZT detectors in parallel with analog electronics is as many as 1.8 and 2.1 times the single ones, and the energy resolution (FWHM) is limited by that of the single one by the means of analog electronics. However, the digital method for signal processing will be sufficiently better by contrast with an analog method especially in energy resolution. The energy resolution by the means of digital electronics can be improved by about 26.67%, compared to that only with analog electronics, while their detection efficiency is almost the same. The cause for this difference is also discussed. (semiconductor devices)

  15. Single-charge-carrier-type sensing with an insulated Frisch ring CdZnTe semiconductor radiation detector

    International Nuclear Information System (INIS)

    Performance optimization of an insulated Frisch ring design was investigated for a 3x3x6 mm CdZnTe planar semiconductor detector. The Frisch ring was composed of copper and was insulated from the detector surface with Teflon. Optimization variables included the Frisch ring length and the bias voltage. Optimized overall device performance was found using a 5 mm long Frisch ring extending from the cathode toward the anode, leaving a 1 mm separation between the Frisch ring and the anode. The best energy resolution observed was 1.7% full width at half maximum at 662 keV with the ring extending 4 mm from the cathode toward the anode

  16. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors.

    Science.gov (United States)

    Roy, U N; Mundle, R M; Camarda, G S; Cui, Y; Gul, R; Hossain, A; Yang, G; Pradhan, A K; James, R B

    2016-01-01

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability. PMID:27216387

  17. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

    Science.gov (United States)

    Roy, U. N.; Mundle, R. M.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Pradhan, A. K.; James, R. B.

    2016-05-01

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability.

  18. Use of silicon pixel detectors in double electron capture experiments

    Energy Technology Data Exchange (ETDEWEB)

    Cermak, P; Stekl, I; Mamedov, F; Rukhadze, E N; Jose, J M; Cermak, J [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 12800 Prague 2 (Czech Republic); Shitov, Yu A; Rukhadze, N I; Brudanin, V B [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region (Russian Federation); Loaiza, P, E-mail: pavel.cermak@utef.cvut.cz [Laboratoire Souterrain de Modane, 73500 Modane (France)

    2011-01-15

    A novel experimental approach to search for double electron capture (EC/EC) is discussed in this article. R and D for a new generation EC/EC spectrometer based on silicon pixel detectors (SPDs) has been conducted since 2009 for an upgrade of the TGV experiment. SPDs built on Timepix technology with a spectroscopic readout from each individual pixel are an effective tool to detect the 2{nu}EC/EC signature of the two low energy X-rays hitting two separate pixels. The ability of SPDs to indentify {alpha}/{beta}/{gamma} particles and localize them precisely leads to effective background discrimination and thus considerable improvement of the signal-to-background ratio (S/B). A multi-SPD system, called a Silicon Pixel Telescope (SPT), is planned based on the experimental approach of the TGV calorimeter which measures thin foils of enriched EC/EC-isotope sandwiched between HPGe detectors working in coincidence mode. The sources of SPD internal background have been identified by measuring SPD radiopurity with a low-background HPGe detector as well as by long-term SPD background runs in the Modane underground laboratory (LSM, France), and results of these studies are presented.

  19. Use of silicon pixel detectors in double electron capture experiments

    Science.gov (United States)

    Cermak, P.; Stekl, I.; Shitov, Yu A.; Mamedov, F.; Rukhadze, E. N.; Jose, J. M.; Cermak, J.; Rukhadze, N. I.; Brudanin, V. B.; Loaiza, P.

    2011-01-01

    A novel experimental approach to search for double electron capture (EC/EC) is discussed in this article. R&D for a new generation EC/EC spectrometer based on silicon pixel detectors (SPDs) has been conducted since 2009 for an upgrade of the TGV experiment. SPDs built on Timepix technology with a spectroscopic readout from each individual pixel are an effective tool to detect the 2νEC/EC signature of the two low energy X-rays hitting two separate pixels. The ability of SPDs to indentify α/β/γ particles and localize them precisely leads to effective background discrimination and thus considerable improvement of the signal-to-background ratio (S/B). A multi-SPD system, called a Silicon Pixel Telescope (SPT), is planned based on the experimental approach of the TGV calorimeter which measures thin foils of enriched EC/EC-isotope sandwiched between HPGe detectors working in coincidence mode. The sources of SPD internal background have been identified by measuring SPD radiopurity with a low-background HPGe detector as well as by long-term SPD background runs in the Modane underground laboratory (LSM, France), and results of these studies are presented.

  20. High frame rate measurements of semiconductor pixel detector readout IC

    International Nuclear Information System (INIS)

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm×4 mm. Its main part is a matrix of 40×32 pixels with 100 μm×100 μm pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  1. Hybrid Pixel Detector Development for the Linear Collider Vertex Tracker

    CERN Document Server

    Battaglia, Marco; Campagnolo, R; Caccia, M; Kucewicz, W; Jalocha, P; Palka, J; Zalewska-Bak, A

    2001-01-01

    In order to fully exploit the physics potential of the future high energy e+e- linear collider, a Vertex Tracker able to provide particle track extrapolation with very high resolution is needed. Hybrid Si pixel sensors are an attractive technology due to their fast read-out capabilities and radiation hardness. A novel pixel detector layout with interleaved cells has been developed to improve the single point resolution. Results of the characterisation of the first processed prototypes by electrostatic measurements and charge collection studies are discussed.

  2. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  3. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    CERN Document Server

    Lebrun, A; Szabó, J L; Arenas-Carrasco, J; Arlt, R; Dubreuil, A; Esmailpur-Kazerouni, K

    2000-01-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm sup 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR)...

  4. Silicon sensors for the upgrades of the CMS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo

    2015-12-15

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.10{sup 34} cm{sup -2}s{sup -1}. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.10{sup 34} cm{sup -2}s{sup -1}. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.10{sup 34} cm{sup -2}s{sup -1}, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φ{sub eq}=2.10{sup 16} cm{sup -2} and a dose of ∼10 MGy after an integrated luminosity of 3000 fb{sup -1}. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip

  5. Silicon sensors for the upgrades of the CMS pixel detector

    International Nuclear Information System (INIS)

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.1034 cm-2s-1. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.1034 cm-2s-1. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.1034 cm-2s-1, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φeq=2.1016 cm-2 and a dose of ∼10 MGy after an integrated luminosity of 3000 fb-1. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip. The maximum rate experienced by the modules produced in Hamburg will be 120 MHz

  6. Pixel readout electronics development for the ALICE pixel vertex and LHCb RICH detector

    CERN Document Server

    Snoeys, W; Cantatore, E; Cencelli, V; Dinapoli, R; Heijne, Erik H M; Jarron, Pierre; Lamanna, P; Minervini, D; O'Shea, V; Quiquempoix, V; San Segundo-Bello, D; Van Koningsveld, B; Wyllie, Ken H

    2001-01-01

    The ALICE1LHCB pixel readout chip emerged from previous experience at CERN. The RD-19 collaboration provided the basis for the installation of a pixel system in the WA97 and NA57 experiments. Operation in these experiments was key in the understanding of the system issues. In parallel the RD-49 collaboration provided the basis to obtain radiation tolerance in commercial submicron CMOS through special circuit layout. The new ALICE1LMB chip was developed to serve two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these two experiments, the chip can be operated in two different modes. In tracking mode all the 50 mu m*435 mu m pixel cells in the 256*32 array are read out individually, whilst in particle identification mode they are combined in groups of 8 to form a 32*32 array of 400 mu m*425 mu m cells. The circuit is currently being manufactured in a commercial 0.25 mu m CMO...

  7. Pixel readout electronics development for the ALICE pixel vertex and LHCb RICH detector

    International Nuclear Information System (INIS)

    The ALICE1LHCB pixel readout chip emerged from previous experience at CERN. The RD-19 collaboration provided the basis for the installation of a pixel system in the WA97 and NA57 experiments. Operation in these experiments was key in the understanding of the system issues. In parallel the RD-49 collaboration provided the basis to obtain radiation tolerance in commercial submicron CMOS through special circuit layout. The new ALICE1LHB chip was developed to serve two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these two experiments, the chip can be operated in two different modes. In tracking mode all the 50 μmx425 μm pixel cells in the 256x32 array are read out individually, whilst in particle identification mode they are combined in groups of 8 to form a 32x32 array of 400 μmx425 μm cells. The circuit is currently being manufactured in a commercial 0.25 μm CMOS technology

  8. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  9. Spectral responses of virtual Frisch-grid CdZnTe detectors and their relation to IR microscopy and x-ray diffraction topography data

    Science.gov (United States)

    Bolotnikov, A. E.; Babalola, S.; Camarda, G. S.; Cui, Y.; Egarievwe, S. U.; Fochuk, P. M.; Hawrami, R.; Hossain, A.; James, J. R.; Nakonechnyj, I. J.; Yang, Ge; James, R. B.

    2008-08-01

    Virtual Frisch-grid CdZnTe detectors potentially can provide energy resolution close to the statistical limit. However, in real detectors, the quality of the crystals used to fabricate the devices primarily determines energy resolution. In this paper, we report our findings on the spectral response of devices and their relation to material-characterization data obtained using IR microscopy and X-ray diffraction topography.

  10. The ALICE Silicon Pixel Detector Control and Calibration Systems

    CERN Document Server

    Calì, Ivan Amos; Manzari, Vito; Stefanini, Giorgio

    2008-01-01

    The work presented in this thesis was carried out in the Silicon Pixel Detector (SPD) group of the ALICE experiment at the Large Hadron Collider (LHC). The SPD is the innermost part (two cylindrical layers of silicon pixel detec- tors) of the ALICE Inner Tracking System (ITS). During the last three years I have been strongly involved in the SPD hardware and software development, construction and commissioning. This thesis is focused on the design, development and commissioning of the SPD Control and Calibration Systems. I started this project from scratch. After a prototyping phase now a stable version of the control and calibration systems is operative. These systems allowed the detector sectors and half-barrels test, integration and commissioning as well as the SPD commissioning in the experiment. The integration of the systems with the ALICE Experiment Control System (ECS), DAQ and Trigger system has been accomplished and the SPD participated in the experimental December 2007 commissioning run. The complex...

  11. Hexagonal pixel detector with time encoded binary readout

    International Nuclear Information System (INIS)

    The University of Hawaii is developing continuous acquisition pixel (CAP) detectors for vertexing applications in lepton colliding experiments such as SuperBelle or ILC. In parallel to the investigation of different technology options such as MAPS or SOI, both analog and binary readout concepts have been tested. First results with a binary readout scheme in which the hit information is time encoded by means of a signal shifting mechanism have recently been published. This paper explains the hit reconstruction for such a binary detector with an emphasis on fake hit reconstruction probabilities in order to evaluate the rate capability in a high background environment such as the planned SuperB factory at KEK. The results show that the binary concept is at least comparable to any analog readout strategy if not better in terms of occupancy. Furthermore, we present a completely new binary readout strategy in which the pixel cells are arranged in a hexagonal grid allowing the use of three independent output directions to reduce reconstruction ambiguities. The new concept uses the same signal shifting mechanism for time encoding, however, in dedicated transfer lines on the periphery of the detector, which enables higher shifting frequencies. Detailed Monte Carlo simulations of full size pixel matrices including hit and BG generation, signal generation, and data reconstruction show that by means of multiple signal transfer lines on the periphery the pixel can be made smaller (higher resolution), the number of output channels and the data volume per triggered event can be reduced dramatically, fake hit reconstruction is lowered to a minimum and the resulting effective occupancies are less than 10-4. A prototype detector has been designed in the AMS 0.35μm Opto process and is currently under fabrication.

  12. Descent of the Silicon Pixel Detector (SPD) for ALICE Experiment

    CERN Multimedia

    2007-01-01

    The Silicon Pixel Detector (SPD) constitutes the two innermost layers of the ALICE Inner Tracking System (ITS) at radii of 3.9 cm and 7.6 cm, respectively. It is a fundamental element for the determination of the position of the primary vertex as well as for the measurement of the impact parameter of secondary tracks originating from the weak decays of strange, charm and beauty particles.

  13. From vertex detectors to inner trackers with CMOS pixel sensors

    OpenAIRE

    Besson, A.; Pérez, A. Pérez; Spiriti, E.; Baudot, J.; Claus, G; Goffe, M.; de Winter, M.

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming ...

  14. Monolithic active pixel radiation detector with shielding techniques

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  15. Pixel diamond detectors for excimer laser beam diagnostics

    Science.gov (United States)

    Girolami, M.; Allegrini, P.; Conte, G.; Salvatori, S.

    2011-05-01

    Laser beam profiling technology in the UV spectrum of light is evolving with the increase of excimer lasers and lamps applications, that span from lithography for VLSI circuits to eye surgery. The development of a beam-profiler, able to capture the excimer laser single pulse and process the acquired pixel current signals in the time period between each pulse, is mandatory for such applications. 1D and 2D array detectors have been realized on polycrystalline CVD diamond specimens. The fast diamond photoresponse, in the ns time regime, suggests the suitability of such devices for fine tuning feedback of high-power pulsed-laser cavities, whereas solar-blindness guarantees high performance in UV beam diagnostics, also under high intensity background illumination. Offering unique properties in terms of thermal conductivity and visible-light transparency, diamond represents one of the most suitable candidate for the detection of high-power UV laser emission. The relatively high resistivity of diamond in the dark has allowed the fabrication of photoconductive vertical pixel-detectors. A semitransparent light-receiving back-side contact has been used for detector biasing. Each pixel signal has been conditioned by a multi-channel read-out electronics made up of a high-sensitive integrator and a Σ-Δ A/D converter. The 500 μs conversion time has allowed a data acquisition rate up to 2 kSPS (Sample Per Second).

  16. EFFECTIVENESS OF ELECTROSTATIC SHIELDING AND ELECTRONIC SUBTRACTION TO CORRECT FOR THE HOLE TRAPPING IN CDZNTE SEMICONDUCTOR DETECTORS.

    Energy Technology Data Exchange (ETDEWEB)

    BOLOTNIKOV,A.E.; CAMARDA, G.S.; HOSSAIN, A.; CUI, Y.; JAMES, R.B.

    2007-08-26

    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the driR and induction regions. The former determines the ''geometrical'' width of the photopeak i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  17. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors

    Science.gov (United States)

    Eisen, Y.; Shor, A.

    1998-02-01

    Among the semiconductor materials of a wide band gap, CdTe and CdZnTe have attracted most attention as room-temperature X-ray and gamma-ray detectors. Suitable CdTe materials for nuclear detectors and, in particular, for spectrometers, have been developed over the past few decades and are mainly grown via the traveling heater method (THM). However, the manufacture of large homogeneous ingots at relatively low cost has not reached yet a proven stage. Cd 1- xZn xTe (CZT) materials, mainly grown via the high-pressure Bridgman (HPB) technique, possess several advantages over CdTe and appear to better approach the practicality of providing large volume X-ray and gamma-ray detectors at moderate costs. Continuing effort is still underway to improve the characteristics of both CdTe and CZT materials in order to achieve reproducible detectors for either low- and high-energy gamma rays. This review paper is divided into three parts: The first part describes different structural designs of detectors to improve their spectroscopic characteristics. These include hemispherical detectors, coplanar strip-electrode detectors and monolithic, two-dimensional segmented electrode arrays with pad sizes smaller than their thickness. This part will also describe various electronic methods to compensate for the poor charge collection of holes. The second part compares the characteristics of planar CdTe and CZT nuclear detectors containing metal contacts. Characteristics include: charge collection efficiencies for both electrons and holes indicated by the mobility-lifetime product, energy resolutions, leakage currents and robustness in field use. The third part is devoted to field uses of these detectors. Those include: X-ray fluorescent spectrometers, large volume spectrometers and a new generation nuclear gamma camera for medical diagnostics based on room-temperature solid-state spectrometers.

  18. Low power, low noise, charge sensitive amplifier in CMOS 0.18 μm technology for the readout of fine pitch pixelated CdTe detector

    International Nuclear Information System (INIS)

    Our group is currently developing a new project dedicated to the design of new Cd(Zn)Te spectro-imaging systems for future space borne astrophysics missions. The main goal is to build a spectro-imaging system with matrix ASIC hybridized to pixelated Cd(Zn)Te detector with typical pixel of 300 μm pitch and typical energy resolution of 0.5 keV at 60 keV. Before designing a complete matrix of readout channels, we designed a prototype ASIC to evaluate the microelectronic technology in terms of noise and tolerance to radiation. We designed an ASIC in the standard AMS 0.18 μm CMOS technology dedicated to the readout of very low capacitance (≤1 pF) and very low dark current (≤5 pA) Cd(Zn)Te detectors. The Caterpylar AMS is a set of 30 low noise low power Charge Sensitive Amplifiers (CSAs). All the CSAs have the same folded cascade architecture, only the type (PMOS or NMOS) and the geometry of the input transistors differ between CSAs. The noise performances of the technology are very good since a minimal ENC of 9 e(-)rms has been measured with power consumption in the CSA of 12 μW only. Influence of the W/L ratio and W * L product of input transistor on noise has been measured and discussed. We connected one of the CSA to a silicon diode and measured an energy resolution of 580 eV FWHM at 122 keV with a 57Co source and of 470 eV FWHM at 59.5 keV with a 241Am source. (authors)

  19. Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

    Science.gov (United States)

    Bo, Gan; Tingcun, Wei; Wu, Gao; Yongcai, Hu

    2016-06-01

    In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. The readout channel is comprised of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 × 2.2 mm2. The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows: the overall gain of the readout channel is 210 V/pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e‑ at zero farad plus 8.2 e‑ per picofarad, and the power consumption is less than 2.4 mW/channel. Through the measurement together with a CdZnTe detector, the energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source 241Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad(Si). Project supported by the National Key Scientific Instrument and Equipment Development Project (No. 2011YQ040082), the National Natural Science Foundation of China (Nos. 11475136, 11575144, 61176094), and the Shaanxi Natural Science Foundation of China (No. 2015JM1016).

  20. Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.

    Science.gov (United States)

    Gu, Yaxu; Jie, Wanqi; Rong, Caicai; Xu, Lingyan; Xu, Yadong; Lv, Haoyan; Shen, Hao; Du, Guanghua; Guo, Na; Guo, Rongrong; Zha, Gangqiang; Wang, Tao; Xi, Shouzhi

    2016-09-01

    The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50V to 400V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50V and 100V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects. PMID:27399802

  1. The data acquisition system of the Belle II Pixel Detector

    International Nuclear Information System (INIS)

    At the future Belle II experiment the DEPFET (DEPleted Field Effect Transistor) pixel detector will consist of about 8 million channels and is placed as the innermost detector. Because of its small distance to the interaction region and the high luminosity in Belle II, for a trigger rate of about 30 kHz with an estimated occupancy of about 3 % a data rate of about 22 GB/s is expected. Due to the high data rate, a data reduction factor higher than 30 is needed in order to stay inside the specifications of the event builder. The main hardware to reduce the data rate is a xTCA based Compute Node (CN) developed in cooperation between IHEP Beijing and University Giessen. Each node has as main component a Xilinx Virtex-5 FX70T FPGA and is equipped with 2 × 2 GB RAM , GBit Ethernet and 4 × 6.25 Gb/s optical links. An ATCA carrier board is able to hold up to four CN and supplies high bandwidth connections between the four CNs and to the ATCA backplane. To achieve the required data reduction on the CNs, regions of interest (ROI) are used. These regions are calculated in two independent systems by projecting tracks back to the pixel detector. One is the High Level Trigger (HLT) which uses data from the Silicon Vertex Detector (SVD), a silicon strip detector, and outer detectors. The other is the Data Concentrator (DATCON) which calculates ROIs based on SVD data only, in order to get low momentum tracks. With this information, only PXD data inside these ROIs will be forwarded to the event builder, while data outside of these regions will be discarded. First results of the test beam time in January 2014 at DESY with a Belle II vertex detector prototype and full DAQ chain will be presented

  2. Application of Hybrid Pixel Detectors for Searches of Rare Decays

    Energy Technology Data Exchange (ETDEWEB)

    Durst, J.; Anton, Gisela; Boehnel, Michael; Gleixner, Thomas; Lueck, Ferdinand; Michel, Thilo [Erlangen Centre for Astroparticle Physics (ECAP), Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Schwenke, Maria; Zuber, Kai [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany)

    2011-06-15

    The new generation of hybrid pixel detectors like the Timepix detector provides access to the track information of the energy deposition in the used sensor, which allows better background discrimination in experiments for searches of rare decays. Due to the hybrid design several combinations of an ASIC with a sensor are possible. Assemblies are available with an attached Silicon sensor or CdTe sensor respectively. The detector measures the energy deposition using the time over threshold method. In this contribution we present simulation results of the detector response of the Timepix detector in applications for searches of rare decays. One application would be the search for the neutrinoless double beta decay of {sup 116}Cd using Timepix detectors with enriched CdTe as sensor material. In addition to the simulation results we present first experimental background measurements using a Timepix detector with Silicon sensor in the underground laboratory in Dresden. Using cluster analysis methods it is possible to categorise the single events.

  3. Pixel hybrid photon detector magnetic distortions characterization and compensation

    CERN Document Server

    Aglieri-Rinella, G; D'Ambrosio, Carmelo; Forty, Roger W; Gys, Thierry; Patel, Mitesh; Piedigrossi, Didier; Van Lysebetten, Ann

    2004-01-01

    The LHCb experiment requires positive kaon identification in the momentum range 2-100 GeV/c. This is provided by two ring imaging Cherenkov detectors. The stringent requirements on the photon detectors are fully satisfied by the novel pixel hybrid photon detector, HPD. The HPD is a vacuum tube with a quartz window, S20 photo-cathode, cross-focusing electron optics and a silicon anode encapsulated within the tube. The anode is a 32*256 pixels hybrid detector, with a silicon sensor bump-bonded onto a readout chip containing 8192 channels with analogue front-end and digital read-out circuitry. An external magnetic field influences the trajectory of the photoelectrons and could thereby degrade the inherent excellent space resolution of the HPD. The HPDs must be operational in the fringe magnetic field of the LHCb magnet. This paper reports on an extensive experimental characterization of the distortion effects. The characterization has allowed the development of parameterisations and of a compensation algorithm. ...

  4. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Rubinskiy, I

    2015-01-01

    A high resolution (σ∼2μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. The telescope consists of six monolithic active pixel sensor planes (Mimosa26) with a pixel pitch of 18.4 \\mu m and thinned down to 50 \\mu m. The excellent resolution, readout rate and DAQ integration capabilities made the telescope a primary test beam tool for many groups including several CERN based experiments. Within the European detector infrastructure project AIDA the test beam telescope is being further extended in terms of cooling and powering infrastructure, read-out speed, area of acceptance, and precision. In order to provide a system optimized for the different requirements by the user community a combination of various state-of-the-art pixel technologies is foreseen. Furthermore, new central dead-time-free trigger logic unit (TLU) has been developed to provide LHC-speed response with one-trigger-per-particle operating mode and a synchronous clock for all conn...

  5. On the basic mechanism of Pixelized Photon Detectors

    CERN Document Server

    Otono, H; Yamashita, S; Yoshioka, T

    2008-01-01

    A Pixelized Photon Detector (PPD) is a generic name for the semiconductor devices operated in the Geiger-mode, such as Silicon PhotoMultiplier and Multi-Pixel Photon Counter, which has high photon counting capability. While the internal mechanisms of the PPD have been intensively studied in recent years, the existing models do not include the avalanche process. We have simulated the multiplication and quenching of the avalanche process and have succeeded in reproducing the output waveform of the PPD. Furthermore our model predicts the existence of dead-time in the PPD which has never been numerically predicted. For serching the dead-time, we also have developed waveform analysis method using deconvolution which has the potential to distinguish neibouring pulses precisely. In this paper, we discuss our improved model and waveform analysis method.

  6. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    CERN Document Server

    Alipour Tehrani, Niloufar; Benoit, Mathieu; Dannheim, Dominik; Dette, Karola; Hynds, Daniel; Kulis, Szymon; Peric, Ivan; Petric, Marko; Redford, Sophie; Sicking, Eva; Valerio, Pierpaolo

    2015-01-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor. Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  7. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    Science.gov (United States)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  8. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1-xZnxTe-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1-xZnxTe detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. A Sealed Gas Pixel Detector for X-ray Astronomy

    CERN Document Server

    Bellazzini, R; Minuti, M; Baldini, L; Brez, A; Latronico, L; Omodei, N; Razzano, M; Massai, M M; Pinchera, M; Pesce-Rollins, M; Sgro, C; Costa, E; Soffitta, P; Sipilä, H; Lempinen, E

    2006-01-01

    We report on the results of a new, sealed, Gas Pixel Detector. The very compact design and the absence of the gas flow system, make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 micron wide, hexagonal cells). The device is able to simultaneously perform good imaging (50-60 micron), moderate spectroscopy (~15% at 6 keV) as well as fast, high rate timing in the 1-10keV range. Moreover, being truly 2D, it is non dispersive and does not require any rotation. The great improvement of sensitivity, at least two orders of magnitude with respect to traditional polarimeters (based on Bragg crystals or Thomson scattering), will allow ...

  10. Low energy polarization sensitivity of the Gas Pixel Detector

    CERN Document Server

    Muleri, F; Baldini, L; Bellazzini, R; Bregeon, J; Brez, A; Costa, E; Frutti, M; Latronico, L; Minuti, M; Negri, M B; Omodei, N; Pinchera, M; Pesce-Rollins, M; Razzano, M; Rubini, A; Sgro', C; Spandre, G

    2007-01-01

    An X-ray photoelectric polarimeter based on the Gas Pixel Detector has been proposed to be included in many upcoming space missions to fill the gap of about 30 years from the first (and to date only) positive measurement of polarized X-ray emission from an astrophysical source. The estimated sensitivity of the current prototype peaks at an energy of about 3 keV, but the lack of readily available polarized sources in this energy range has prevented the measurement of detector polarimetric performances. In this paper we present the measurement of the Gas Pixel Detector polarimetric sensitivity at energies of a few keV and the new, light, compact and transportable polarized source that was devised and built to this aim. Polarized photons are produced, from unpolarized radiation generated with an X-ray tube, by means of Bragg diffraction at nearly 45 degrees. The employment of mosaic graphite and flat aluminum crystals allow the production of nearly completely polarized photons at 2.6, 3.7 and 5.2 keV from the di...

  11. A photon counting pixel detector for X-ray imaging

    International Nuclear Information System (INIS)

    Hybrid semiconductor pixel detector technology is presented in this thesis as an alternative to current imaging systems in medical imaging and synchrotron radiation applications. The technology has been developed from research performed in High Energy Physics, in particular, for the ATLAS experiment at the LHC, planned for 2005. This thesis describes work done by the author on behalf of the MEDIPIX project, a collaboration between 13 international institutions for the development of hybrid pixel detectors for non-HEP applications. Chapter 1 describes the motivation for these detectors, the origin of the technology, and the current state of the art in imaging devices. A description of the requirements of medical imaging on X-ray sensors is described, and the properties of film and CCDs are discussed. The work of the RD19 collaboration is introduced to show the evolution of these devices. Chapter 2 presents the basic semiconductor theory required to understand the operation of these detectors, and a section on image theory introduces the fundamental parameters which are necessary to define the quality of an imaging device. Chapter 3 presents measurements made by the author on a photon counting detector (PCD1) comprising a PCC1 (MEDIPIX1) readout chip bumpbonded to silicon and gallium arsenide pixel detectors. Tests on the seperate readout chip and the bump-bonded assembly are shown with comparisons between the performance of the two materials. Measurements of signal-to-noise ratio, detection efficiency and noise performance are presented, along with an MTF measurement made by the Freiburg group. The X-ray tube energy spectrum was calibrated by REGAM. The performance of the PCD in a powder diffraction experiment using a synchrotron radiation source is described in chapter 4. This chapter reports the first use of a true 2-D hybrid pixel detector in a synchrotron application, and a comparison with the existing scintillator based technology is made. The measurements made

  12. Status of the CMS Phase I Pixel Detector Upgrade

    OpenAIRE

    Spannagel, Simon

    2015-01-01

    Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity of L = 2 x10^34 cm^-2s^-1 are likely to be reached before 2018 and probably significantly exceeded in the so-called Phase I period until 2022. At this higher luminosity and increased hit occupancies the current CMS pixel detector would be subject to severe dead time and inefficiencies introduced by limited buffers in the analog read-out chip and effects of radiat...

  13. Radiation damage of pixelated photon detector by neutron irradiation

    Science.gov (United States)

    Nakamura, Isamu

    2009-10-01

    Radiation Damage of Pixelated Photon Detector by neutron irradiation is reported. MPPC, one of PPD or Geiger-mode APD, developed by Hamamatsu Photonics, is planned to be used in many high energy physics experiments. In such experiments radiation damage is a serious issue. A series of neutron irradiation tests is performed at the Reactor YAYOI of the University of Tokyo. MPPCs were irradiated at the reactor up to 1012 neutron/cm2. In this paper, the effect of neutron irradiation on the basic characteristics of PPD including gain, noise rate, photon detection efficiency is presented.

  14. DAQ Development for Silicon-On-Insulator Pixel detectors

    CERN Document Server

    Nishimura, Ryutaro; Miyoshi, Toshinobu

    2015-01-01

    We are developing DAQ for Si-pixel detectors by using a Slicon-On-Insulator (SOI) technology. This DAQ consists of firmware works on SEABAS (Soi EvAluation BoArd with Sitcp) DAQ board and software works on PC. We have been working on the development of firmware/software. Now we accomplished to speed up the readout (~90Hz) and to add a function for frame rate control. This is the report of our development work for the High Speed DAQ system.

  15. Development of a spectral model based on charge transport for the Swift/BAT 32K CdZnTe detector array

    International Nuclear Information System (INIS)

    The properties of 32K CdZnTe (4x4mm2 large, 2mm thick) detectors have been studied in the pre-flight calibration of the Burst Alert Telescope (BAT) on-board the Swift Gamma-ray Burst Explorer (scheduled for launch in November 2004). In order to understand the energy response of the BAT CdZnTe array, we first quantify the mobility-lifetime (μτ) products of carriers in individual CdZnTe detectors, which produce a position dependency in the charge induction efficiency and results in a low-energy tail in the energy spectrum. Based on a new method utilizing 57Co spectra obtained at different bias voltages, the μτ for electrons ranges from 5.0x10-4 to 1.0x10-2cm2V-1 while the μτ for holes ranges from 1.3x10-5 to 1.8x10-4cm2V-1. We find that this wide distribution of μτ products explains the large diversity in spectral shapes between CdZnTe detectors well. We also find that the variation of μτ products can be attributed to the difference of crystal ingots or manufacturing harness. We utilize the 32K sets of extracted μτ products to develop a spectral model of the detector. In combination with Monte Carlo simulations, we can construct a spectral model for any photon energy or any incident angle

  16. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.;

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have...... the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even...... though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors....

  17. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    Science.gov (United States)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  18. The pixel detector for the CMS phase-II upgrade

    International Nuclear Information System (INIS)

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R and D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb−1, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×1016 1 MeV eq.n. / cm2, or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R and D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R and D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R and D effort are presented and discussed in this article

  19. The pixel detector for the CMS phase-II upgrade

    CERN Document Server

    Dinardo, Mauro

    2015-01-01

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R\\&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000~fb$^{-1}$, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of $2\\times10^{16}$~1MeV~eq.n.~/~cm$^2$, or equivalently 10~MGy of radiation dose in silicon, at about 3~cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R\\&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R\\&D effort for the development of the readout chip in the 65~nm CMOS technology. Status, progresses, and prospects of the CMS R\\&D effort are presented and discussed in this article.

  20. The pixel detector for the CMS phase-II upgrade

    Science.gov (United States)

    Dinardo, M. E.

    2015-04-01

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb-1, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×1016 1 MeV eq.n. / cm2, or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R&D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R&D effort are presented and discussed in this article.

  1. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    International Nuclear Information System (INIS)

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 1016 particles per cm2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 μm2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  2. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mathes, Markus

    2008-12-15

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  3. Simulation of gas mixture drift properties for GasPixel detector for modernization of ATLAS

    International Nuclear Information System (INIS)

    Results of simulation of gas mixture drift properties for GasPixel detector are presented. The properties of gaseous mixtures for the GasPixel detector have been studied in view of its use in high luminosity tracking applications for the ATLAS Inner Detector in a future super-LHC collider

  4. A sealed Gas Pixel Detector for X-ray astronomy

    International Nuclear Information System (INIS)

    We report on the results of a new, sealed Gas Pixel Detector. The very compact design and the absence of the gas flow system make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high-gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 μm wide, hexagonal cells). The device is able to simultaneously perform good imaging (50-60 μm), moderate spectroscopy (∼15% at 6 keV) as well as fast, high-rate timing in the 1-10 keV range. Moreover, being truly 2D, it is non-dispersive and does not require any rotation. The great improvement of sensitivity, at least two orders of magnitude with respect to traditional polarimeters (based on Bragg crystals or Thomson scattering), will allow the direct exploration of the most dramatic objects of the X-ray sky. At the focus of the large mirror area of the XEUS telescope it will be decisive in reaching many of the scientific goals of the mission. With integration times of the order of 1 day, polarimetry of Active Galactic Nuclei at the percent level will be possible, making for a real breakthrough in high-energy astrophysics

  5. A sealed Gas Pixel Detector for X-ray astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Bellazzini, R. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy)], E-mail: ronaldo.bellazzini@pi.infn.it; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Latronico, L.; Omodei, N. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Razzano, M.; Massai, M.M. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Dipartimento di Fisica, Universita di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Pesce-Rollins, M.; Sgro, C. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Costa, Enrico; Soffitta, Paolo [Istituto di Astrofisica Spaziale e Fisica Cosmica, Via del Fosso del Cavaliere 100, I-00133, Roma (Italy); Sipila, H.; Lempinen, E. [Oxford Instruments Analytical Oy, Nihtisillankuja 5, FI-02631 Espoo (Finland)

    2007-09-01

    We report on the results of a new, sealed Gas Pixel Detector. The very compact design and the absence of the gas flow system make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high-gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 {mu}m wide, hexagonal cells). The device is able to simultaneously perform good imaging (50-60 {mu}m), moderate spectroscopy ({approx}15% at 6 keV) as well as fast, high-rate timing in the 1-10 keV range. Moreover, being truly 2D, it is non-dispersive and does not require any rotation. The great improvement of sensitivity, at least two orders of magnitude with respect to traditional polarimeters (based on Bragg crystals or Thomson scattering), will allow the direct exploration of the most dramatic objects of the X-ray sky. At the focus of the large mirror area of the XEUS telescope it will be decisive in reaching many of the scientific goals of the mission. With integration times of the order of 1 day, polarimetry of Active Galactic Nuclei at the percent level will be possible, making for a real breakthrough in high-energy astroph0011ysi.

  6. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

    International Nuclear Information System (INIS)

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  7. Theoretical evaluation of the Doppler broadening contribution to the angular resolution in CdZnTe Compton scattering detector

    International Nuclear Information System (INIS)

    Electronically collimated Compton Cameras have been tested in Single Photon Emission Tomography (SPECT) systems instead of mechanically collimated gamma detectors in order to improve their limited sensitivity. One of the main factors that contribute to the worsening of the angular resolution and thus to the deterioration of the system spatial resolution is Doppler broadening. Double differential Klein-Nishina equation is used to consider the random movement of electron inside the crystal. It is important to perform this analysis for each particular material because is difficult to infer one simple Doppler broadening dependency of the atomic number Z. In high Z materials the internal electrons are strongly linked to the nucleus and therefore there can be found high momentums, but they represent just a small portion of the electrons that suffers Compton scattering. This work estimates the influence of the Doppler broadening in CdZnTe semiconductor for different incoming photon energies. For this means there are analyzed main Compton broadening processes in semiconductor Cd0,8Zn0,2Te with density ρ=5,85g/cm3. (Author)

  8. A 12-bit 1 MS/s SAR-ADC for multi-channel CdZnTe detectors

    International Nuclear Information System (INIS)

    This paper presents a low power, area-efficient and radiation-hardened 12-bit 1 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) for multi-channel CdZnTe (CZT) detector applications. In order to improve the SAR-ADC's accuracy, a novel comparator is proposed in which the offset voltage is self-calibrated and also a new architecture for the unit capacitor array is proposed to reduce the capacitance mismatches in the charge-redistribution DAC. The ability to radiation-harden the SAR-ADC is enhanced through circuit and layout design technologies. The prototype chip was fabricated using a TSMC 0.35 μm 2P4M CMOS process. At a 3.3/5 V power supply and a sampling rate of 1 MS/s, the proposed SAR-ADC achieves a peak signal to noise and distortion ratio (SINAD) of 67.64 dB and consumes only 10 mW power. The core of the prototype chip occupies an active area of 1180 × 1080 μm2. (paper)

  9. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    Science.gov (United States)

    Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

    2016-07-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  10. Pixel Detector Trial Assembly Test in the SR1 building

    CERN Multimedia

    D. Giugni

    2004-01-01

    During the last two months the Pixel group [LBL, Milan and Wuppertal] made a successful integration test on the mechanics of the barrel. The scope of the test was to qualify the integration procedures and the various assembling tools. The test took place in the clean room of the SR1 building at CERN, where the detector has been assembled around a dummy beam pipe made of Stainless Steel. The process is rather complex: the shells come in two parts and they have to be clamped together to get the full shell. This operation is carried out by a dedicated tool which is shown to the right in the picture below. The layer 1 shell is clamped around a "service" pipe that will be used for moving the full layer to the integration tool [ITT] which is visible on the left. View of the tools devoted to the Pixel barrel integration in the SR1 building Also visible in the picture is the global frame that is actually held by the tool. It will engage the layers sliding onto the rails. The first two layers are sequentially...

  11. Towards a new generation of pixel detector readout chips

    International Nuclear Information System (INIS)

    The Medipix3 Collaboration has broken new ground in spectroscopic X-ray imaging and in single particle detection and tracking. This paper will review briefly the performance and limitations of the present generation of pixel detector readout chips developed by the Collaboration. Through Silicon Via technology has the potential to provide a significant improvement in the tile-ability and more flexibility in the choice of readout architecture. This has been explored in the context of 3 projects with CEA-LETI using Medipix3 and Timepix3 wafers. The next generation of chips will aim to provide improved spectroscopic imaging performance at rates compatible with human CT. It will also aim to provide full spectroscopic images with unprecedented energy and spatial resolution. Some of the opportunities and challenges posed by moving to a more dense CMOS process will be discussed

  12. ATLAS pixel detector timing optimisation with the back of crate card of the optical pixel readout system

    Energy Technology Data Exchange (ETDEWEB)

    Flick, T; Gerlach, P; Reeves, K; Maettig, P [Department of Physics, Bergische Universitaet Wuppertal (Germany)

    2007-04-15

    As with all detector systems at the Large Hadron Collider (LHC), the assignment of data to the correct bunch crossing, where bunch crossings will be separated in time by 25 ns, is one of the challenges for the ATLAS pixel detector. This document explains how the detector system will accomplish this by describing the general strategy, its implementation, the optimisation of the parameters, and the results obtained during a combined testbeam of all ATLAS subdetectors.

  13. Novel electrode geometry to improve performance of CdZnTe detectors

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl

    A novel electrode geometry to improve the sensitivity to single-polarity charge carriers in ionization detectors is presented. The electrode geometry is based on the same principle as Frisch grids in gas detectors. It reduces the sensitivity to one type of charge carrier, making the detector almost...

  14. Novel electrode geometry to improve performance of CdZnTe detectors

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl

    1998-01-01

    A novel electrode geometry to improve the sensitivity to single-polarity charge carriers in ionization detectors is presented. The electrode geometry is based on the same principle as Frisch grids in gas detectors. It reduces the sensitivity to one type of charge carrier, making the detector almost...

  15. Detecting multi-hit events in a CdZnTe coplanar grid detector using pulse shape analysis: A method for improving background rejection in the COBRA 0nubetabeta experiment

    Energy Technology Data Exchange (ETDEWEB)

    McGrath, J., E-mail: jnem500@npg.york.ac.u [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Fulton, B.R.; Joshi, P.; Davies, P. [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Muenstermann, D.; Schulz, O. [Lehrstuhl fuer Experimentelle Physik, Technische Universitaet Dortmund, Otto-Hahn Str. 4, 44227 Dortmund (Germany); Zuber, K. [TU Dresden, Institut fuer Kern und Teilchenphysik, D-01062 Dresden (Germany); Freer, M. [School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2010-03-21

    A number of experiments are underway to search for a rare form of radioactivity, neutrinoless double beta decay, as a measurement of the half-life would enable the neutrino mass to be determined. The COBRA collaboration (Zuber, 2001; Dawson, 2009) employs CdZnTe detectors in such a search. This paper describes techniques using pulse shape analysis for identifying two-centre events in a coplanar grid CdZnTe detector. This enables Compton scatter events to be identified and so suppressing the background present within the COBRA detectors.

  16. Detecting multi-hit events in a CdZnTe coplanar grid detector using pulse shape analysis: A method for improving background rejection in the COBRA 0νββ experiment

    International Nuclear Information System (INIS)

    A number of experiments are underway to search for a rare form of radioactivity, neutrinoless double beta decay, as a measurement of the half-life would enable the neutrino mass to be determined. The COBRA collaboration (Zuber, 2001; Dawson, 2009) employs CdZnTe detectors in such a search. This paper describes techniques using pulse shape analysis for identifying two-centre events in a coplanar grid CdZnTe detector. This enables Compton scatter events to be identified and so suppressing the background present within the COBRA detectors.

  17. Low-energy CZT detector array for the ASIM mission

    DEFF Research Database (Denmark)

    Cenkeramaddi, Linga Reddy; Genov, Georgi; Kohfeldt, Anja;

    2012-01-01

    In this article we introduce the low-energy CZT (CdZnTe) 16 384-pixel detector array on-board the Atmosphere Space Interaction Monitor (ASIM), funded by the European Space Agency. This detector is a part of the larger Modular X-and Gamma-ray sensor (MXGS). The CZT detector array is sensitive...

  18. High-speed readout of high-Z pixel detectors with the LAMBDA detector

    International Nuclear Information System (INIS)

    High-frame-rate X-ray pixel detectors make it possible to perform time-resolved experiments at synchrotron beamlines, and to make better use of these sources by shortening experiment times. LAMBDA is a photon-counting hybrid pixel detector based on the Medipix3 chip, designed to combine a small pixel size of 55 μm, a large tileable module design, high speed, and compatibility with ''high-Z'' sensors for hard X-ray detection. This technical paper focuses on LAMBDA's high-speed-readout functionality, which allows a frame rate of 2000 frames per second with no deadtime between successive images. This takes advantage of the Medipix3 chip's ''continuous read-write'' function and highly parallelised readout. The readout electronics serialise this data and send it back to a server PC over two 10 Gigabit Ethernet links. The server PC controls the detector and receives, processes and stores the data using software designed for the Tango control system. As a demonstration of high-speed readout of a high-Z sensor, a GaAs LAMBDA detector was used to make a high-speed X-ray video of a computer fan

  19. Data Concentrator for the BELLE II DEPFET pixel detector

    International Nuclear Information System (INIS)

    The innermost two layers of the BELLE II detector located at the KEK facility in Tsukuba, Japan, will be covered by high granularity DEPFET pixel (PXD) sensors. This leads to a high data rate of around 60 Gbps, which has to be significantly reduced by the Data Acquisition System. To perform the data reduction the hit information of the surrounding silicon strip detector (SVD) is used to define so-called Regions of Interest (ROI) and only hits inside these ROIs are saved. The ROIs are computed by reconstructing track segments from SVD data. A data reduction of up to a factor of 10 can be achieved this way. All the necessary processing stages, the receiving and multiplexing of the data on many optical links from the SVD, the track reconstruction and the definition of the ROIs, are performed by the Data Concentrator. The planned hardware design is based on a distributed set of Advanced Mezzanine Cards (AMC) each equipped with a Field Programmable Gate Array (FPGA) chip. In this talk, the firmware development of the algorithms and the hardware implementation of the Data Concentrator are discussed. In addition, preliminary studies of track reconstruction algorithms, that could be used for FPGA-based tracking, are presented.

  20. From vertex detectors to inner trackers with CMOS pixel sensors

    CERN Document Server

    Besson, A; Spiriti, E; Baudot, J; Claus, G; Goffe, M; Winter, M

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

  1. Design and implementation of an expert system for the detector control systems of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    In the framework of this thesis an expert system ''Pixel-Advisor'' for the control system of the pixel detector was designed and implemented. This supports the operational personnel in the diagnosis and removal of possible problems, which are in connection with the detector control system and unburdens the few available DCS experts

  2. Study of the spectrometric performances of monolithic CdZnTe / CdTe gamma ray detectors

    International Nuclear Information System (INIS)

    Pixelated monolithic CdTe/CdZnTe semiconductor gamma ray detectors are brought to replace scintillation detectors for medical applications, notably for single photon emission computed tomography (SPECT). In addition to compactness, they present better spectrometric performances: energy resolution, detection efficiency, and spatial resolution. Moreover, the photons depth of interaction in the crystal can be measured. This work aimed in studying experimentally and by simulation the correlations between anodes pitch, material physic properties (resistivity and electron transport properties), and detectors spectrometric performances. We have compared several methods of measuring the photon interaction depth, and have obtained an energy resolution ranging from 1.7% to 7% at 122 keV, according to material, for 5 mm thick detectors. Charge sharing between adjacent anodes has been studied and a measured data processing is proposed. (author)

  3. Charge Sharing Effect on 600 {\\mu}m Pitch Pixelated CZT Detector for Imaging Applications

    CERN Document Server

    Yin, Yongzhi; Xu, Dapeng; Chen, Ximeng

    2013-01-01

    We are currently investigating the spatial resolution of highly pixelated Cadmium Zinc Telluride (CZT) detector for imaging applications. A 20 mm {\\times} 20 mm {\\times} 5 mm CZT substrate was fabricated with 600 {\\mu}m pitch pixels (500 {\\mu}m anode pixels with 100 {\\mu}m gap) and coplanar cathode. Charge sharing between two pixels was studied using collimated 122 keV gamma ray source. Experiments show a resolution of 125 {\\mu}m FWHM for double-pixel charge sharing events when the 600 {\\mu}m pixelated and 5 mm thick CZT detector biased at -1000 V. In addition, we analyzed the energy response of the 600 {\\mu}m pitch pixelated CZT detector.

  4. X-ray imaging using single photon processing with semiconductor pixel detectors

    International Nuclear Information System (INIS)

    More than 10 years experience with semiconductor pixel detectors for vertex detection in high-energy physics experiments together with the steady progress in CMOS technology opened the way for the development of single photon processing pixel detectors for various applications including medical X-ray imaging. The state of the art of such pixel devices consists of pixel dimensions as small as 55x55 μm2, electronic noise per pixel 100 e- rms, signal-to-noise discrimination levels around 1000 e- with a spread 50 e- and a dynamic range up to 32 bits/pixel. Moreover, the high granularity of hybrid pixel detectors makes it possible to probe inhomogeneities of the attached semiconductor sensor

  5. X-ray imaging using single photon processing with semiconductor pixel detectors

    CERN Document Server

    Mikulec, Bettina; Heijne, Erik H M; Llopart-Cudie, Xavier; Tlustos, Lukas

    2003-01-01

    More than 10 years experience with semiconductor pixel detectors for vertex detection in high energy physics experiments together with the steady progress in CMOS technology opened the way for the development of single photon processing pixel detectors for various applications including medical X-ray imaging. The state of the art of such pixel devices consists of pixel dimensions as small as 55x55 um2, electronic noise per pixel <100 e- rms, signal-to-noise discrimination levels around 1000 e- with a spread <50 e- and a dynamic range up to 32 bits per pixel. Moreover, the high granularity of hybrid pixel detectors makes it possible to probe inhomogeneities of the attached semiconductor sensor.

  6. Development of CdZnTe X-ray detectors at DSRI

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2000-01-01

    at DSRI. With the advent of the Danish Micro Satellite program it was, however, recognised that this type of detector is very well suited for two proposed missions (eXCALIBur, AXO). The research at DSRI has so far been concentrated on the spectroscopic properties of the CZT detector. At DSRI we have...

  7. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    Science.gov (United States)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  8. Display of cosmic ray event going through the pixel detector taken on October 18th 2008

    CERN Multimedia

    ATLAS, Experiment

    2014-01-01

    Shown are the XY view (of SCT and pixels and of pixels alone) and an RZ view. The track has a hit in each of the layers in both the upper and the lower hemisphere. In the bottom of L0 there are even two hits due to a module overlap. Apart from the signal hits there is only one other hit in the pixel detector demonstrating the very low noise level in the detector.

  9. Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

    CERN Document Server

    Mathes, Markus

    2008-01-01

    Abstract: Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge c...

  10. The CdZnTe detector in the measurement of mammographic x-ray spectra

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Satoshi; Imagawa, Kotaro [Osaka Univ., Graduate School of Medicine, Course of Health Sciences, Suita, Osaka (Japan); Matsumoto, Masao [Osaka Univ., School of Allied Health Sciences, Faculty of Medicine, Suita, Osaka (Japan)

    2001-09-01

    As a mammographic x-ray unit has geometrical restrictions, large detectors cannot be used in experiments. We employed a Cd{sub 0.9}Zn{sub 0.1}Te (CZT) detector as an x-ray spectrometer in this study. An excellent response of the CZT detector can be expected in mammographic energy range: the energy of x-rays is relatively low ({approx}35keV), and the main components of the x-rays are around 20keV in mammography. (author)

  11. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    Dobos, Daniel; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  12. Status and future of the ATLAS Pixel Detector at the LHC

    International Nuclear Information System (INIS)

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of disks in each forward end-cap. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-on-n silicon substrates. Intensive calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. The record breaking instantaneous luminosities of 7.7×1033cm−2s−1 recently surpassed at the LHC generated a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulated, the first effects of radiation damage became observable in the silicon sensors as an increase in the silicon leakage current and the change of the voltage required to fully deplete the sensor. A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014) together with the replacement of pixel services. A letter of intent was submitted for a completely new Pixel Detector after 2023, capable to take data with extremely high leveled luminosities of 5×1034cm−2s−1 at the high luminosity LHC. -- Highlights: •The ATLAS Pixel Detector provides hermetic coverage with three layers with 80 million pixels. •Calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. •First effects of radiation damage became observable in the silicon sensors. •A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014). •Replacement of pixel services in 2013–2014. •A letter of intent was submitted for new Pixel Detector after 2023 for high luminosity LHC

  13. CdTe and CdZnTe semiconductor gamma detectors equipped with ohmic contacts

    CERN Document Server

    Lachish, U

    1999-01-01

    Semiconductor gamma detectors, equipped with ohmic contacts, are uniform and fast response devices that are not sensitive to hole trapping. Gamma generated charges flow within the detector bulk towards the ohmic contacts, and induce additional charge flow from the contacts towards them. The additional flow stems from the fundamental principles of Poisson and the continuity equations. Electrons flow from the negative contacts towards the holes and recombine with them, therefore, they overcome hole trapping. The ohmic contact effect transforms the detector into a single carrier device. Good quality ohmic contact detectors are achieved from a crystal grown by standard methods, that initially has too many traps, by adjustment of the Fermi level position within the forbidden band. The device design and its principle of operation are discussed.

  14. Use of Sub-bandgap Illumination to Improve Radiation Detector Resolution of CdZnTe

    Science.gov (United States)

    Duff, Martine C.; Washington, Aaron L.; Teague, Lucile C.; Wright, Jonathan S.; Burger, Arnold; Groza, Michael; Buliga, Vladimir

    2015-09-01

    The performance of Cd1- x Zn x Te (CZT) materials for room-temperature gamma/x-ray radiation detection continues to improve in terms of material quality and detector design. In our prior publications, we investigated the use of multiple wavelengths of light (in the visible and infrared) to target charge carriers at various trap energies and physical positions throughout crystals. Light exposure significantly alters the charge mobility and improves carrier collection at the anode contact. This study presents an investigation of material performance as a radiation detector during such illumination. The decrease in charge trapping and increase in charge collection due to a higher probability of free electron release from traps contributed to an increase in the resolution-based performance of the detector through controlled illumination. We investigated the performance improvement of CZT crystals with previously known levels of intrinsic defects and secondary phases, at various voltages, light-emitting diode (LED) light wavelengths, and shaping times. Although our setup was clearly not optimized for radiation detector performance, it demonstrated substantial resolution improvements (based on full-width at half-maximum using 662-keV gamma rays from 137Cs upon illumination with 950-nm light) of 16% to 38% in comparison with unilluminated CZT under similar conditions. This manuscript includes discussion of the electrooptic behavior and its effect on performance. Additional testing and fabrication of a detector that incorporates such LED light optimization could lead to improved performance with existing detector-grade materials.

  15. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications

    International Nuclear Information System (INIS)

    The CdTe gamma-ray camera IBIS/ISGRI, on board the INTEGRAL satellite launched in October 2002, is currently the largest spectro-imager of this type in the world. The development of this detector, for research in the field of astrophysics, has provided the opportunity to demonstrate the feasibility of massive integration of CdTe nuclear detectors, taking advantage of the CdTe good spectral performances and high modularity. Many other groups in the world work also to further develop detectors using this material in view of improving its spectral performances (crystal quality, electrode geometry and type, electronics and filtering, etc.), the spatial resolution (pixelization of monolithic crystals) and the detection efficiency at high energy (thickness). In this review, I will detail the main directions in which to strive in order to explore these fields in the upcoming years through examples of techniques or applications

  16. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  17. Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

    International Nuclear Information System (INIS)

    Full text: There is a growing need for large area X-and Gamma radiation detectors for penetrating radiations in various fields of application e.g. astronomy, detectors for nuclear medicine, biosensor materials, security, non-proliferation of hazardous materials, and environmental applications etc. Direct X-rays conversion into electric charges in a semiconductor is envisaged with better spectroscopic characteristics to improve contrast and quantitative measurements compared to indirect detection using scintillators. The family of II-VI semiconductor materials combine a range of excellent properties such as their high sensitivity due to the high mobility-lifetime products, their high energy resolution as a consequence of the electron-hole pair formation energy, their reasonable maturity in terms of microelectronic technologies required for commercial detector fabrication, wide range of stopping power and band-gaps available. In particular, CdTe and CdxZn1-xTe (CZT) with Zn=0.1 offer a favorable combination of physical and chemical properties that makes it attractive as a room temperature X-ray detector material of choice for many applications involving photon energies up to several hundreds of keV. From the scientific experience accumulated in the past years, the detector properties are strongly dependent on a series of parameters which must be strictly controlled during crystal growth, such as the homogeneity, stoichiometry and the related intrinsic defects which appear during the material growth, a high mobility-lifetime for electron and holes is mandatory etc. Production of detector-grade CdTe and CdZnTe on industrial scale is still a challenge and optimal growth methods and growth conditions have been under intensive investigation. Progress in crystal growth and characterization achieved in a project of Institute partnership between Charles University in Prague and University of Freiburg, Germany which was sponsored by Alexander von Humboldt Foundation, will be

  18. Defect Measurements of CdZnTe Detectors Using I-DLTS, TCT, I-V and Gamma-ray Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gul,R.

    2008-08-11

    In this work we measured the crystal defect levels and tested the performance of CdZnTe detectors by diverse methodologies, viz., Current Deep Level Transient Spectroscopy (I-DLTS), Transient Current Technique (TCT), Current and Capacitance versus Voltage measurements (I-V and C-V), and gamma-ray spectroscopy. Two important characteristics of I-DLTS technique for advancing this research are (1) it is applicable for high-resistivity materials (>10{sup 6} {Omega}-cm), and, (2) the minimum temperature for measurements can be as low as 10 K. Such low-temperature capability is excellent for obtaining measurements at shallow levels. We acquired CdZnTe crystals grown by different techniques from two different vendors and characterized them for point defects and their response to photons. I-DLTS studies encompassed measuring the parameters of the defects, such as the energy levels in the band gap, the carrier capture cross-sections and their densities. The current induced by the laser-generated carriers and the charge collected (or number of electrons collected) were obtained using TCT that also provides the transport properties, such as the carrier life time and mobility of the detectors under study. The detector's electrical characteristics were explored, and its performance tested using I-V, C-V and gamma-ray spectroscopy.

  19. Small-Scale Readout System Prototype for the STAR PIXEL Detector

    Energy Technology Data Exchange (ETDEWEB)

    Szelezniak, Michal; Anderssen, Eric; Greiner, Leo; Matis, Howard; Ritter, Hans Georg; Stezelberger, Thorsten; Sun, Xiangming; Thomas, James; Vu, Chinh; Wieman, Howard

    2008-10-10

    Development and prototyping efforts directed towards construction of a new vertex detector for the STAR experiment at the RHIC accelerator at BNL are presented. This new detector will extend the physics range of STAR by allowing for precision measurements of yields and spectra of particles containing heavy quarks. The innermost central part of the new detector is a high resolution pixel-type detector (PIXEL). PIXEL requirements are discussed as well as a conceptual mechanical design, a sensor development path, and a detector readout architecture. Selected progress with sensor prototypes dedicated to the PIXEL detector is summarized and the approach chosen for the readout system architecture validated in tests of hardware prototypes is discussed.

  20. Performance of common-grid pixelated CZT detector with different array geometries

    International Nuclear Information System (INIS)

    A 4 × 4 common-grid pixelated CZT detector with four different array geometries has been designed and fabricated. The impact of small pixel effect, guide effect of the steering grid and edge effect on detector performance has been investigated. Both the weighting potential and the real electric field distributions have been calculated for better understanding the charge induction and collection. Results show that with constant pixel pitch, smaller anode pixel suffers from serious charge loss in volume and surface layer between anode pixels and steering grid. The small pixel effect is not strong enough to remove hole trailing for lager anode pixel. A relative high potential difference between anode pixels and steering grid leads to sufficient charge collection resulting in a better detector performance, especially for smaller anode pixels. In addition to edge and corner effects due to faulty or imperfect fabrication of the detector, the weighting potential distribution difference is an inherent physical effect that alter the profile of the induced signals in edge and corner pixels

  1. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  2. Characterisation of vapour phase grown CdTe and (Cd,Zn)Te for detector applications

    CERN Document Server

    Fiederle, M; Rogalla, M; Meinhardt, J; Ludwig, J; Runge, K; Benz, W

    1999-01-01

    The growth of CdTe from the vapour phase offers several improvements in crystal quality and homogeneity. CdTe and (Cd, Zn)Te were grown by the modified Markov technique. The transport properties and the detector performance are given and compared to melt grown material. (author)

  3. Multichannel CdZnTe gamma ray spectrometer

    Science.gov (United States)

    Doty, F. P.; Lingren, C. L.; Apotovsky, B. A.; Brunsch, J.; Butler, J. F.; Collins, T.; Conwell, R. L.; Friesenhahn, S.; Gormley, J.; Pi, B.; Zhao, S.; Augustine, F. L.; Bennett, B. A.; Cross, E.; James, R. B.

    1999-02-01

    A 3 cm 3 multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV.

  4. Performance Studies of Pixel Hybrid Photon Detectors for the LHCb RICH Counters

    CERN Document Server

    Aglieri Rinella, G; Piedigrossi, D; Van Lysebetten, A

    2004-01-01

    The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

  5. Performance studies of pixel hybrid photon detectors for the LHCb RICH counters

    CERN Document Server

    Aglieri-Rinella, G; Piedigrossi, D; Van Lysebetten, A

    2006-01-01

    The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

  6. CdTe and CdZnTe detectors in nuclear medicine

    CERN Document Server

    Scheiber, C

    2000-01-01

    Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

  7. Test Results on the Silicon Pixel Detector for the TTF-FEL Beam Trajectory Monitor

    CERN Document Server

    Hillert, S; Müller, U C; Roth, S; Hansen, K; Holl, P; Karstensen, S; Kemmer, J; Klanner, Robert; Lechner, P; Leenen, M; Ng, J S T; Schmüser, P; Strüder, L

    2001-01-01

    Test measurements on the silicon pixel detector for the beam trajectory monitor at the free electron laser of the TESLA test facility are presented. To determine the electronic noise of detector and read-out and to calibrate the signal amplitude of different pixels the 6 keV photons of the manganese K line are used. Two different methods determine the spatial accuracy of the detector: In one setup a laser beam is focused to a straight line and moved across the pixel structure. In the other the detector is scanned using a low-intensity electron beam of an electron microscope. Both methods show that the symmetry axis of the detector defines a straight line within 0.4 microns. The sensitivity of the detector to low energy X-rays is measured using a vacuum ultraviolet beam at the synchrotron light source HASYLAB. Additionally, the electron microscope is used to study the radiation hardness of the detector.

  8. Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure

    Science.gov (United States)

    Tohyama, Shigeru; Sasaki, Tokuhito; Endoh, Tsutomu; Sano, Masahiko; Kato, Koji; Kurashina, Seiji; Miyoshi, Masaru; Yamazaki, Takao; Ueno, Munetaka; Katayama, Haruyoshi; Imai, Tadashi

    2013-12-01

    An uncooled infrared (IR) focal plane array (FPA) with 23.5 μm pixel pitch has been successfully demonstrated and has found wide commercial applications in the areas of thermography, security cameras, and other applications. One of the key issues for uncooled IRFPA technology is to shrink the pixel pitch because the size of the pixel pitch determines the overall size of the FPA, which, in turn, determines the cost of the IR camera products. This paper proposes an innovative pixel structure with a diaphragm and beams placed in different levels to realize an uncooled IRFPA with smaller pixel pitch (≦17 μm). The upper level consists of a diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to be placed on the adjacent pixels. The test devices of this pixel design with 12, 15, and 17 μm pitch have been fabricated on the Si read-out integrated circuit (ROIC) of quarter video graphics array (QVGA) (320×240) with 23.5 μm pitch. Their performances are nearly equal to those of the IRFPA with 23.5 μm pitch. For example, a noise equivalent temperature difference of 12 μm pixel is 63.1 mK for F/1 optics with the thermal time constant of 14.5 ms. Then, the proposed structure is shown to be effective for the existing IRFPA with 23.5 μm pitch because of the improvements in IR sensitivity. Furthermore, the advanced pixel structure that has the beams composed of two levels are demonstrated to be realizable.

  9. Commissioning and Operation of the ATLAS Pixel Detector at the CERN LHC Collider

    CERN Document Server

    Djama, F; The ATLAS collaboration

    2010-01-01

    Physics program at the CERN LHC collider started in autumn 2009. Since then, LHC daily delivers collisions between its two proton beams. This talk was devoted to the commissioning and early operation of the ATLAS Pixel Detector. The Pixel Detector is working nicely and all the required performances like efficiency, resolution and low noise were met. The fraction of working modules is as high as 97.4 %. The Pixel Detector fully participates in the reconstruction of charged particles trajectories, and is a key element in finding primary and secondary verticies and in tagging of short-lived particles.

  10. Test Results on the Silicon Pixel Detector for the TTF-FEL Beam Trajectory Monitor

    OpenAIRE

    Hillert, S.; Ischebeck, R.; Müller, U. C.; Roth, S.; Hansen, K.; Holl, P.; Karstensen, S.; Kemmer, J.; Klanner, R.; Lechner, P.; Leenen, M; Ng, J. S. T.; Schmüser, P.; Strüder, L.

    2000-01-01

    Test measurements on the silicon pixel detector for the beam trajectory monitor at the free electron laser of the TESLA test facility are presented. To determine the electronic noise of detector and read-out and to calibrate the signal amplitude of different pixels the 6 keV photons of the manganese K line are used. Two different methods determine the spatial accuracy of the detector: In one setup a laser beam is focused to a straight line and moved across the pixel structure. In the other th...

  11. Modeling Inter-Pixel Crosstalk in Teledyne Imaging Sensors H4RG Detectors

    CERN Document Server

    Dudik, R P; Dorland, B N; Veillette, D; Waczynski, A; Lane, B; Loose, M; Kan, E; Waterman, J; Pravdo, S

    2012-01-01

    CMOS-hybrid arrays have recently surfaced as competitive optical detectors for use in ground- and space-based astronomy. One source of error in these detectors that does not appear in more traditional CCD arrays is the inter-pixel capacitance component of crosstalk. In this paper we use a single pixel reset method to model inter-pixel capacitance (IPC). We combine this IPC model with a model for charge diffusion to estimate the total crosstalk on H4RG arrays. Finally, we compare our model results to Fe55 data obtained using an astrometric camera built to test the H4RG-B0 generation detectors.

  12. Characterization of charge carrier collection in a CdZnTe Frisch collar detector with a highly collimated 137Cs source

    International Nuclear Information System (INIS)

    A 4.7 x4.7x9.5 mm3 CdZnTe Frisch collar device was characterized through probing the device with a highly collimated 137Cs 662 keV gamma ray source. In a systematic series of experiments, the detector was probed along the length and width with a 137Cs gamma ray source using a 43.0 mm long Pb-collimator with a 0.6 mm circular hole. The detector was probed along the central line under different operating voltages of 1200, 1000, 800, 600 and 400 V. The experimental results correlated well to charge collection calculations for a modeled device with the same size and operating conditions. It was proved that, unlike the planar configuration, the charge collection efficiency profile along the length of Frisch collar device is considerably improved. The CdZnTe raw materials for this study were acquired from Redlen Technologies, and the Frisch collar device was fabricated and characterized at S.M.A.R.T. Laboratory at Kansas State University.

  13. Optimization of virtual Frisch-grid CdZnTe detector designs for imaging and spectroscopy of gamma rays

    Science.gov (United States)

    Bolotnikov, A. E.; Abdul-Jabbar, N. M.; Babalola, S.; Camarda, G. S.; Cui, Y.; Hossain, A.; Jackson, E.; Jackson, H.; James, J. R.; Luryi, A. L.; James, R. B.

    2007-09-01

    In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5x12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modelling results are described.

  14. OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS

    International Nuclear Information System (INIS)

    In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5∼12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modeling results are described

  15. X-CSIT: a toolkit for simulating 2D pixel detectors

    International Nuclear Information System (INIS)

    A new, modular toolkit for creating simulations of 2D X-ray pixel detectors, X-CSIT (X-ray Camera SImulation Toolkit), is being developed. The toolkit uses three sequential simulations of detector processes which model photon interactions, electron charge cloud spreading with a high charge density plasma model and common electronic components used in detector readout. In addition, because of the wide variety in pixel detector design, X-CSIT has been designed as a modular platform so that existing functions can be modified or additional functionality added if the specific design of a detector demands it. X-CSIT will be used to create simulations of the detectors at the European XFEL, including three bespoke 2D detectors: the Adaptive Gain Integrating Pixel Detector (AGIPD), Large Pixel Detector (LPD) and DePFET Sensor with Signal Compression (DSSC). These simulations will be used by the detector group at the European XFEL for detector characterisation and calibration. For this purpose, X-CSIT has been integrated into the European XFEL's software framework, Karabo. This will further make it available to users to aid with the planning of experiments and analysis of data. In addition, X-CSIT will be released as a standalone, open source version for other users, collaborations and groups intending to create simulations of their own detectors

  16. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

    2002-01-01

    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  17. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  18. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Manolopoulos, S.; Bates, R.; Campbell, M.; Snoeys, W.; Heijne, E.; Pernigotti, E.; Raine, C.; Smith, K. E-mail: k.smith@physics.gla.ac.uk; Watt, J.; O' Shea, V.; Ludwig, J.; Schwarz, C

    1999-09-11

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the {omega}3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  19. Efficient phase contrast imaging in STEM using a pixelated detector. Part II: Optimisation of imaging conditions

    International Nuclear Information System (INIS)

    In Part I of this series of two papers, we demonstrated the formation of a high efficiency phase-contrast image at atomic resolution using a pixelated detector in the scanning transmission electron microscope (STEM) with ptychography. In this paper we explore the technique more quantitatively using theory and simulations. Compared to other STEM phase contrast modes including annular bright field (ABF) and differential phase contrast (DPC), we show that the ptychographic phase reconstruction method using pixelated detectors offers the highest contrast transfer efficiency and superior low dose performance. Applying the ptychographic reconstruction method to DPC segmented detectors also improves the detector contrast transfer and results in less noisy images than DPC images formed using difference signals. We also find that using a minimum array of 16×16 pixels is sufficient to provide the highest signal-to-noise ratio (SNR) for imaging beam sensitive weak phase objects. Finally, the convergence angle can be adjusted to enhance the contrast transfer based on the spatial frequencies of the specimen under study. - Highlights: • High efficiency phase contrast transfer function (PCTF) can be achieved using pixelated detectors followed by a ptychographic reconstruction. • Ptychographic reconstruction offers the highest PCTF across the entire spatial frequency range compared to DPC and ABF. • Image simulations show that a ptychographic reconstruction using pixelated detectors offers a superior low dose performance for imaging weak phase objects. • Optimisation of imaging conditions using pixelated detectors are discussed by considering the contrast transfer function for various cases

  20. The Upgraded Pixel Detector of the ATLAS Experiment for Run-2

    CERN Document Server

    Ferrere, Didier; The ATLAS collaboration

    2016-01-01

    Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented, using collision data.

  1. Efficient phase contrast imaging in STEM using a pixelated detector. Part II: Optimisation of imaging conditions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hao, E-mail: hao.yang@materials.ox.ac.uk [University of Oxford, Department of Materials. Parks Rd, Oxford OX1 3PH (United Kingdom); Pennycook, Timothy J.; Nellist, Peter D. [University of Oxford, Department of Materials. Parks Rd, Oxford OX1 3PH (United Kingdom); EPSRC SuperSTEM Facility, Daresbury Laboratory, WA4 4AD (United Kingdom)

    2015-04-15

    In Part I of this series of two papers, we demonstrated the formation of a high efficiency phase-contrast image at atomic resolution using a pixelated detector in the scanning transmission electron microscope (STEM) with ptychography. In this paper we explore the technique more quantitatively using theory and simulations. Compared to other STEM phase contrast modes including annular bright field (ABF) and differential phase contrast (DPC), we show that the ptychographic phase reconstruction method using pixelated detectors offers the highest contrast transfer efficiency and superior low dose performance. Applying the ptychographic reconstruction method to DPC segmented detectors also improves the detector contrast transfer and results in less noisy images than DPC images formed using difference signals. We also find that using a minimum array of 16×16 pixels is sufficient to provide the highest signal-to-noise ratio (SNR) for imaging beam sensitive weak phase objects. Finally, the convergence angle can be adjusted to enhance the contrast transfer based on the spatial frequencies of the specimen under study. - Highlights: • High efficiency phase contrast transfer function (PCTF) can be achieved using pixelated detectors followed by a ptychographic reconstruction. • Ptychographic reconstruction offers the highest PCTF across the entire spatial frequency range compared to DPC and ABF. • Image simulations show that a ptychographic reconstruction using pixelated detectors offers a superior low dose performance for imaging weak phase objects. • Optimisation of imaging conditions using pixelated detectors are discussed by considering the contrast transfer function for various cases.

  2. X-CSIT: a toolkit for simulating 2D pixel detectors

    CERN Document Server

    Joy, Ashley; Hauf, Steffen; Kuster, Markus; Rüter, Tonn

    2015-01-01

    A new, modular toolkit for creating simulations of 2D X-ray pixel detectors, X-CSIT (X-ray Camera SImulation Toolkit), is being developed. The toolkit uses three sequential simulations of detector processes which model photon interactions, electron charge cloud spreading with a high charge density plasma model and common electronic components used in detector readout. In addition, because of the wide variety in pixel detector design, X-CSIT has been designed as a modular platform so that existing functions can be modified or additional functionality added if the specific design of a detector demands it. X-CSIT will be used to create simulations of the detectors at the European XFEL, including three bespoke 2D detectors: the Adaptive Gain Integrating Pixel Detector (AGIPD), Large Pixel Detector (LPD) and DePFET Sensor with Signal Compression (DSSC). These simulations will be used by the detector group at the European XFEL for detector characterisation and calibration. For this purpose, X-CSIT has been integrat...

  3. Si and CdTe pixel detector developments at SPring-8

    International Nuclear Information System (INIS)

    Single X-ray photon counting pixel detectors have become the most advanced detector technology in synchrotron radiation experiments recently. In particular, the PILATUS detector based on a silicon sensor has reached a very mature state and represents the world's largest detector in this field. This paper first reports on threshold energy calibrations and the capability of applying an energy-resolved X-ray imaging with PILATUS. Second the design of a cadmium telluride (CdTe) pixel detector is described. A high density and high-atomic number sensor material is required in high energy X-ray applications available at SPring-8. For this purpose we are developing a CdTe pixel detector with the SP8-01 readout ASIC covering a wide dynamic range between 10 and 100 keV and containing lower and upper discriminators.

  4. The 025 mum front-end for the CMS pixel detector

    CERN Document Server

    Erdmann, W

    2005-01-01

    The front-end for the CMS pixel detector has been translated from the radiation hard DMILL process to a commercial 0.25 mum technology. The smaller feature size of this technology permitted a reduction of the pixel size and other improvements. First results obtained with the translated chip are discussed.

  5. Optimization of CZT Detectors with Sub-mm Pixel Pitches Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop and optimize 0.5 cm thick Cadmium Zinc Telluride (CZT) detectors with very small pixel pitches, i.e. 350 micron and 600 micron. The proposed...

  6. Performance study of new pixel hybrid photon detector prototypes for the LHCb RICH counters

    CERN Document Server

    Moritz, M; Allebone, L; Campbell, M; Gys, Thierry; Newby, C; Pickford, A; Piedigrossi, D; Wyllie, K

    2004-01-01

    A pixel Hybrid Photon Detector was developed according to the specific requirements of the LHCb ring imaging Cerenkov counters. This detector comprises a silicon pixel detector bump-bonded to a binary readout chip to achieve a 25 ns fast readout and a high signal-to-noise ratio. The detector performance was characterized by varying the pixel threshold, the tube high voltage, the silicon bias voltage and by the determination of the photoelectron detection efficiency. Furthermore accelerated aging and high pixel occupancy tests were performed to verify the long term stability. The results were obtained using Cerenkov light and a fast pulsed light emitting diode. All measurements results are within the expectations and fulfill the design goals. (8 refs).

  7. 320x240 GaAs pixel detectors with improved X-ray imaging quality

    Energy Technology Data Exchange (ETDEWEB)

    Irsigler, R.; Andersson, J.; Alverbro, J.; Fakoor-Biniaz, Z.; Froejdh, C.; Helander, P.; Martijn, H.; Meikle, D.; Oestlund, M.; O' Shea, V.; Smith, K

    2001-03-11

    We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320x240 square-shaped pixels with a pitch of 38 {mu}m. The GaAs pixel detectors are based on semi-insulating and VPE grown substrates. The ROIC operates in the charge integration mode and provides snapshot as well as real time video images. Previously we have reported that the image quality of semi-insulating GaAs pixel detectors suffer from local variations in X-ray sensitivity. We have now developed a method to compensate for the sensitivity variations by applying suitable offset and gain corrections. The improvement in image quality is demonstrated in the measured signal-to-noise ratio of flood exposure images.

  8. 320x240 GaAs pixel detectors with improved X-ray imaging quality

    International Nuclear Information System (INIS)

    We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320x240 square-shaped pixels with a pitch of 38 μm. The GaAs pixel detectors are based on semi-insulating and VPE grown substrates. The ROIC operates in the charge integration mode and provides snapshot as well as real time video images. Previously we have reported that the image quality of semi-insulating GaAs pixel detectors suffer from local variations in X-ray sensitivity. We have now developed a method to compensate for the sensitivity variations by applying suitable offset and gain corrections. The improvement in image quality is demonstrated in the measured signal-to-noise ratio of flood exposure images

  9. Digital column readout architectures for hybrid pixel detector readout chips

    CERN Document Server

    Poikela, T; Westerlund, T; Buytaert, J; Campbell, M; De Gaspari, M; Llopart, X; Wyllie, K; Gromov, V; Kluit, R; van Beuzekom, M; Zappon, F; Zivkovic, V; Brezina, C; Desch, K; Fu, Y; Kruth, A

    2014-01-01

    In this paper, two digital column architectures suitable for sparse readout of data from a pixel matrix in trigger-less applications are presented. Each architecture reads out a pixel matrix of 256 x 256 pixels with a pixel pitch of 55 µm. The first architecture has been implemented in the Timepix3 chip, and this is presented together with initial measurements. Simulation results and measured data are compared. The second architecture has been designed for Velopix, a readout chip planned for the LHCb VELO upgrade. Unlike Timepix3, this has to be tolerant to radiation-induced single-event effects. Results from post-layout simulations are shown with the circuit architectures.

  10. Final Report: A CdZnTe detector for MRI-compatible SPECT Systems

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Ling-Jian

    2012-12-27

    The key objective of this project is to develop the enabling technology for future MRI-compatible nuclear (e.g. SPECT) imaging system, and to demonstrate the feasibility of performing simultaneous MR and SPECT imaging studies of the same object. During the past three years, we have developed (a) a MRI-compatible ultrahigh resolution gamma ray detector and associated readout electronics, (b) a theoretical approach for modeling the effect of strong magnetic field on SPECT image quality, and (c) a maximum-likelihood (ML) based reconstruction routine with correction for the MR-induced distortion. With this support, we have also constructed a four-head MR-compatible SPECT system and tested the system inside a 3-T clinical MR-scanner located on UI campus. The experimental results obtained with this system have clearly demonstrated that sub-500um spatial resolution can be achieved with a SPECT system operated inside a 3-T MRI scanner. During the past three years, we have accomplished most of the major objectives outlined in the original proposal. These research efforts have laid out a solid foundation the development of future MR-compatible SPECT systems for both pre-clinical and clinical imaging applications.

  11. Improved CdZnTe detectors grown by vertical Bridgman process

    International Nuclear Information System (INIS)

    The γ ray (57Co) and α particle (241Am) detector response of Cd1-xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Post-growth processing was utilized to produce a high-resistivity material with improved charge-collection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the low-energy tailing of the γ-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV γ-photon line in crystals with x = 0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from 57Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise

  12. Modular pixelated detector system with the spectroscopic capability and fast parallel read-out

    OpenAIRE

    Vavřík, D. (Daniel); Holík, M.; Jakůbek, J; Jakůbek, M.; Kraus, V.; Krejčí, F.; Soukup, P. (Pavel); Tureček, D.; Vacík, J. (Jiří); Žemlička, J.

    2014-01-01

    A modular pixelated detector system was developed for imaging applications, where spectroscopic analysis of detected particles is advantageous e.g. for energy sensitive X-ray radiography, fluorescent and high resolution neutron imaging etc. The presented system consists of an arbitrary number of independent versatile modules. Each module is equipped with pixelated edgeless detector with spectroscopic ability and has its own fast read-out electronics. Design of the modules allows assembly of v...

  13. Low-noise analog front-end signal processing channel integration for pixelated semiconductor radiation detector

    OpenAIRE

    Lin, Ming-Cheng

    2012-01-01

    In the research development of the medical nuclear imaging, the low noise performance has always been a mandatory requirement in the design of the semiconductor pixelated radiation detector system in order to achieve the high detectability of the charge signal. The noise-optimized analog front-end signal processing channel composed of the charge sensitive amplifier and the pulse shaper is used extensively in processing the radiation charge signals from the pixelated semiconductor detector. Th...

  14. Accessing photon bunching with photon number resolving multi-pixel detector

    OpenAIRE

    Kalashnikov, Dmitry A.; Tan, Si-Hui; Chekhova, Maria V.; Krivitsky, Leonid A.

    2010-01-01

    In quantum optics and its applications, there is an urgent demand for photon-number resolving detectors. Recently, there appeared multi-pixel detectors (MPPC) that are able to distinguish between 1,2,..10 photons. At the same time, strong coupling between different pixels (cross-talk) hinders their photon-number resolution. In this work, we suggest a method for `filtering out' the cross-talk effect in the measurement of intensity correlation functions.

  15. Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

    Science.gov (United States)

    Kalliopuska, Juha; Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula

    2011-08-01

    VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ˜90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

  16. Screen printing and chip flipping techniques for large area hybrid pixel detectors bonding

    International Nuclear Information System (INIS)

    In the last few years hybrid silicon pixel detectors came to use in high energy physics. One of the most serious problems is the realization of detectors and read out electronics interconnection at high density and low cost. For the upgrade in the forward direction of the DELPHI silicon vertex detector, it has been successfully carried out the bonding of pixel detectors to VLSI read out chips by means of conductive glue screen printing followed by a precise chip flipping procedure. The measured missing contact rate is (0.05±0.03)%. (orig.)

  17. Investigation of photon counting pixel detectors for X-ray spectroscopy and imaging

    Energy Technology Data Exchange (ETDEWEB)

    Talla, Patrick Takoukam

    2011-04-07

    The Medipix2 and Medipix3 detectors are hybrid pixelated photon counting detectors with a pixel pitch of 55 {mu}m. The sensor material used in this thesis was silicon. Because of their small pixel size they suffer from charge sharing i.e. an incoming photon can be registered by more than one pixel. In order to correct for charge sharing due to lateral diffusion of charge carriers, the Medipix3 detector was developed: with its Charge Summing Mode, the charge collected in a cluster of 2 x 2 pixel is added up and attributed to only one pixel whose counter is incremented. The adjustable threshold of the detectors allows to count the photons and to gain information on their energy. The main purposes of the thesis are to investigate spectral and imaging properties of pixelated photon counting detectors from the Medipix family such as Medipix2 and Medipix3. The investigations are based on simulations and measurements. In order to investigate the spectral properties of the detectors measurements were performed using fluorescence lines of materials such as molybdenum, silver but also some radioactive sources such as Am-241 or Cd-109. From the measured data, parameters like the threshold dispersion and the gain variation from pixel-to-pixel were extracted and used as input in the Monte Carlo code ROSI to model the responses of the detector to monoenergetic photons. The measured data are well described by the simulations for Medipix2 and for Medipix3 operating in Charge Summing Mode. Due to charge sharing and due to the energy dependence of attenuation processes in silicon and to Compton scattering the incoming and the measured spectrum differ substantially from each other. Since the responses to monoenergetic photons are known, a deconvolution was performed to determine the true incoming spectrum. Several direct and iterative methods were successfully applied on measured and simulated data of an X-ray tube and radioactive sources. The knowledge of the X-ray spectrum is

  18. Investigation of photon counting pixel detectors for X-ray spectroscopy and imaging

    International Nuclear Information System (INIS)

    The Medipix2 and Medipix3 detectors are hybrid pixelated photon counting detectors with a pixel pitch of 55 μm. The sensor material used in this thesis was silicon. Because of their small pixel size they suffer from charge sharing i.e. an incoming photon can be registered by more than one pixel. In order to correct for charge sharing due to lateral diffusion of charge carriers, the Medipix3 detector was developed: with its Charge Summing Mode, the charge collected in a cluster of 2 x 2 pixel is added up and attributed to only one pixel whose counter is incremented. The adjustable threshold of the detectors allows to count the photons and to gain information on their energy. The main purposes of the thesis are to investigate spectral and imaging properties of pixelated photon counting detectors from the Medipix family such as Medipix2 and Medipix3. The investigations are based on simulations and measurements. In order to investigate the spectral properties of the detectors measurements were performed using fluorescence lines of materials such as molybdenum, silver but also some radioactive sources such as Am-241 or Cd-109. From the measured data, parameters like the threshold dispersion and the gain variation from pixel-to-pixel were extracted and used as input in the Monte Carlo code ROSI to model the responses of the detector to monoenergetic photons. The measured data are well described by the simulations for Medipix2 and for Medipix3 operating in Charge Summing Mode. Due to charge sharing and due to the energy dependence of attenuation processes in silicon and to Compton scattering the incoming and the measured spectrum differ substantially from each other. Since the responses to monoenergetic photons are known, a deconvolution was performed to determine the true incoming spectrum. Several direct and iterative methods were successfully applied on measured and simulated data of an X-ray tube and radioactive sources. The knowledge of the X-ray spectrum is

  19. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    International Nuclear Information System (INIS)

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra

  20. Radiationhard components for the control system of a future ATLAS pixel detector

    CERN Document Server

    Becker, K; Kersten, S; Kind, P; Mättig, P; Püllen, L; Zeitnitz, C

    2015-01-01

    will include a new pixel detector. A completely new detector control system (DCS) for this pixel detector will be required in order to cope with the substantial increase in radiation at the HL-LHC. The DCS has to have a very high reliability and all components installed within the detector volume have to be radiationhard. This will ensure a safe operation of the pixel detector and the experiment. A further design constraint is the minimization of the used material and cables in order to limit the impact on the tracking performance to a minimum. To meet these requirements we propose a DCS network which consists of a DCS chip and a DCS controller. In the following we present the development of the first prototypes for the DCS chip and the DCS controller with a special focus on the communication interface, radiation hardness and robustness against single event upsets.

  1. Beam test results of the BTeV silicon pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Gabriele Chiodini et al.

    2000-09-28

    The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

  2. A semi-absolute passive non-destructive assay technique for the verification of uranium oxide powder cans using a miniature CdZnTe detector

    International Nuclear Information System (INIS)

    A semi-absolute method for estimating the 235U enrichment of uranium oxide powder in cans was investigated using a γ-ray spectrometer composed of a miniature quasi-hemispherical CdZnTe detector and a portable multi-channel analyzer. A simplified Monte Carlo scheme has been applied for calculating the geometrical and attenuation factors affecting the measurements. The obtained results for the estimated enrichment were compared with those measured by relative methods and also with results obtained using a high-purity germanium detector. The precision of the estimated 235U enrichment could be accepted taking into consideration uncertainties in the values of the linear attenuation coefficients of γ-ray interaction with the nuclear material compound and the activities of the standard point sources used for measuring the detector efficiency. The accuracy of the method was found to be negatively biased with a maximum value of -7%, which necessitates the use of more precise standard sources and more precise information about detector configuration. Germanium detector data results were found to be more accurate because of high resolution and well defined detector configuration. (author)

  3. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  4. Simulation on the Charged Particle Response of the STAR Heavy Flavor Tracker Pixel Detector

    Science.gov (United States)

    Cimaroli, Alex; Li, Xin

    2009-10-01

    The main task of the STAR experiment, located at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory, is to study the quark-gluon plasma (QGP), which is believed to have been created a few microseconds after the ``Big Bang.'' Heavy quarks are ideal tools for studying the properties of QGP. The Heavy Flavor Tracker (HFT) is the central part of the STAR future heavy flavor physics program and will enable STAR to directly measure heavy flavor mesons. The core of HFT is a pixel detector (PIXEL) using CMOS Active PIXEL Sensor. This poster will describe the development of a detailed simulation of the pixel detector response to charged particles and the corresponding fast simulation that dramatically enhances the simulation speed with little sacrifice in accuracy. The full simulation randomly generates ionized electrons along an incoming track and diffuses the electrons inside the pixel array until they are collected by the electronics or recombined inside a pixel. With the same result, the fast simulation, which quickens processing time from one hour to 5 seconds, generates a grid inside a single pixel and create a map of probability distribution functions for a single ionized electron generated from a grid point. We will also discuss the study of pixel detector position resolution using a simple clustering algorithm.

  5. Results on 0.7% X0 thick pixel modules for the ATLAS detector

    CERN Document Server

    Netchaeva, P; Darbo, G; Einsweiler, Kevin F; Gagliardi, G; Gemme, C; Gilchriese, M G D; Oppizzi, P; Richardson, J; Rossi, L; Ruscino, E; Vernocchi, F; Znizka, G

    2001-01-01

    Modules are the basic building blocks of the ATLAS pixel detector system, they are made of a silicon sensor tile containing ~46000 pixel cells of 50 mu m*400 mu m, 16 front-end chips connected to the sensor through bump bonding, a kapton flex circuit and the module controller chip. The pixel detector is the first to encounter particles emerging from LHC interactions, minimization of radiation length of pixel modules is therefore very important. We report here on the construction techniques and on the operation of the first ATLAS pixel modules of 0.7% radiation length thickness. We have operated these modules with threshold of 3700*10+or-300*10, mean noise value of 225*10 and 0.3% dead channels. (3 refs).

  6. Results on 0.7% X0 thick pixel modules for the ATLAS detector

    International Nuclear Information System (INIS)

    Modules are the basic building blocks of the ATLAS pixel detector system, they are made of a silicon sensor tile containing ∼46 000 pixel cells of 50 μmx400 μm, 16 front-end chips connected to the sensor through bump bonding, a kapton flex circuit and the module controller chip. The Pixel detector is the first to encounter particles emerging from LHC interactions, minimization of radiation length of pixel modules is therefore very important. We report here on the construction techniques and on the operation of the first ATLAS pixel modules of 0.7% radiation length thickness. We have operated these modules with threshold of 3700x10±300x10, mean noise value of 225x10 and 0.3% dead channels

  7. A study on the shielding mechanisms of SOI pixel detector

    CERN Document Server

    Lu, Yunpeng; Wu, Zhigang; Ouyang, Qun; Arai, Yasuo

    2015-01-01

    In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS process. A TCAD simulation showed the shielding effectiveness influenced by the high sheet resistance of shielding layers. Test structures specially designed to measure the crosstalk associated to charge injection were implemented in CPIXTEG3/3b. Measurement results proved that using shielding layer is indispensable for counting type pixel and Double-SOI is superior to Nested-well in terms of shielding effectiveness and design flexibility.

  8. X-ray analog pixel array detector for single synchrotron bunch time-resolved imaging

    CERN Document Server

    Koerner, Lucas J

    2010-01-01

    Dynamic x-ray studies may reach temporal resolutions limited by only the x-ray pulse duration if the detector is fast enough to segregate synchrotron pulses. An analog integrating pixel array detector with in-pixel storage and temporal resolution of around 150 ns, sufficient to isolate pulses, is presented. Analog integration minimizes count-rate limitations and in-pixel storage captures successive pulses. Fundamental tests of noise and linearity as well as high-speed laser measurements are shown. The detector resolved individual bunch trains at the Cornell High Energy Synchrotron Source (CHESS) at levels of up to 3.7x10^3 x-rays/pixel/train. When applied to turn-by-turn x-ray beam characterization single-shot intensity measurements were made with a repeatability of 0.4% and horizontal oscillations of the positron cloud were detected. This device is appropriate for time-resolved Bragg spot single crystal experiments.

  9. 4.3 μm quantum cascade detector in pixel configuration.

    Science.gov (United States)

    Harrer, A; Schwarz, B; Schuler, S; Reininger, P; Wirthmüller, A; Detz, H; MacFarland, D; Zederbauer, T; Andrews, A M; Rothermund, M; Oppermann, H; Schrenk, W; Strasser, G

    2016-07-25

    We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D* of 5⋅107 cmHz/W was measured. PMID:27464155

  10. Module Production and Qualification for the Phase I Upgrade of the CMS Pixel Detector

    CERN Document Server

    AUTHOR|(CDS)2086689

    2015-01-01

    After consolidation of the LHC in 2013/14 its centre-of-mass energy will increase to 13TeV and the luminosity will reach $2 \\cdot 10^{34}\\, \\textnormal{cm}^{-2} \\textnormal{s}^{-1}$, which is twice the design luminosity. The latter will result in more simultaneous particle collisions, which would significantly increase the dead time of the current readout chip of the CMS pixel detector. Therefore the entire CMS pixel detector is replaced in 2016/17 and a new digital readout with larger buffers will be used to handle increasing pixel hit rates. An additional fourth barrel-layer provides more space points to improve track reconstruction. Half of the required modules for layer four is being produced at Karlsruhe Institute of Technology (KIT). This poster deals with the smallest discrete subunit of the pixel detector, the module and its assembly process. Moreover first production experience will be shown.

  11. Progress in the use of pixel detectors in double beta decay experiment TGV

    International Nuclear Information System (INIS)

    The TGV collaboration has been investigating two neutrino double electron capture (2νEC/EC) in 106Cd since 2000. The double beta experiments would answer some of the puzzling problems about neutrinos (e.g. nature and mass) but one of the main challenges is the background events. The collaboration is investigating the use of pixel detectors in such rare decay experiments. Pixel detector gives spatial information along with energy of the particle, thus provides useful information to reduce the background. The collaboration has proposed a Silicon Pixel Telescope (SPT) for the next generation experiment; where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. A prototype unit of SPT has been constructed and results of preliminary background measurements performed on the surface and in the underground laboratories are presented

  12. Progress in the use of pixel detectors in double beta decay experiment TGV

    Science.gov (United States)

    Jose, J. M.; TGV Collaboration

    2013-12-01

    The TGV collaboration has been investigating two neutrino double electron capture (2νEC/EC) in 106Cd since 2000. The double beta experiments would answer some of the puzzling problems about neutrinos (e.g. nature and mass) but one of the main challenges is the background events. The collaboration is investigating the use of pixel detectors in such rare decay experiments. Pixel detector gives spatial information along with energy of the particle, thus provides useful information to reduce the background. The collaboration has proposed a Silicon Pixel Telescope (SPT) for the next generation experiment; where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. A prototype unit of SPT has been constructed and results of preliminary background measurements performed on the surface and in the underground laboratories are presented.

  13. Progress in the use of pixel detectors in double beta decay experiment TGV

    Energy Technology Data Exchange (ETDEWEB)

    Jose, J. M. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 12800 Prague 2 (Czech Republic); Collaboration: TGV Collaboration

    2013-12-30

    The TGV collaboration has been investigating two neutrino double electron capture (2νEC/EC) in {sup 106}Cd since 2000. The double beta experiments would answer some of the puzzling problems about neutrinos (e.g. nature and mass) but one of the main challenges is the background events. The collaboration is investigating the use of pixel detectors in such rare decay experiments. Pixel detector gives spatial information along with energy of the particle, thus provides useful information to reduce the background. The collaboration has proposed a Silicon Pixel Telescope (SPT) for the next generation experiment; where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. A prototype unit of SPT has been constructed and results of preliminary background measurements performed on the surface and in the underground laboratories are presented.

  14. Si pixel detectors in the detection of EC/EC decay

    International Nuclear Information System (INIS)

    The SPT collaboration has been investigating the applicability of pixel detectors in the detection of two neutrino double electron capture (2νEC/EC) in106Cd. The collaboration has proposed a Silicon Pixel Telescope (SPT) where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. The Pixel detector gives spatial information along with energy of the particle, thus helps to identify and remove the background signals. Four units of SPT prototype (using 0.5 and 1 mm Si sensors) were fabricated and installed in the LSM underground laboratory, France. Recent progress in the SPT experiment and preliminary results from background measurements are presented

  15. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

    Science.gov (United States)

    Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

    2016-02-01

    We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams. PMID:26750260

  16. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  17. The ATLAS Pixel Detector for Run II at the Large Hadron Collider

    CERN Document Server

    Marx, Marilyn; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  18. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    Run-2 of the LHC will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed as well as a new read-out chip within CMOS 130nm technology and with larger area, smaller pixel size and faster readout capability. The new detector is the first large scale application of of 3D detectors and CMOS 130nm technology. An overview of the lessons learned during the IBL project will be presented, focusing on the challenges and highlighting the issues met during the productio...

  19. X-ray Characterization of a Multichannel Smart-Pixel Array Detector

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A.; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

  20. X-ray characterization of a multichannel smart-pixel array detector.

    Science.gov (United States)

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements. PMID:26698064

  1. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    CERN Document Server

    Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

    2015-01-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

  2. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Y; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair the modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using light weight staves and CO$_{2}$ based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and the IBL pr...

  3. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    ATLAS Pixel Collaboration; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  4. Pixel detectors for diffraction-limited storage rings

    OpenAIRE

    Denes, Peter; Schmitt, Bernd

    2014-01-01

    Dramatic advances in synchrotron radiation sources produce ever-brighter beams of X-rays, but those advances can only be used if there is a corresponding improvement in X-ray detectors. With the advent of storage ring sources capable of being diffraction-limited (down to a certain wavelength), advances in detector speed, dynamic range and functionality is required. While many of these improvements in detector capabilities are being pursued now, the orders-of-magnitude increases in brightness ...

  5. Pixel array detector for X-ray free electron laser experiments

    Energy Technology Data Exchange (ETDEWEB)

    Philipp, Hugh T., E-mail: htp2@cornell.edu [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Hromalik, Marianne [Electrical and Computer Engineering, SUNY Oswego, Oswego, NY 13126 (United States); Tate, Mark; Koerner, Lucas [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M. [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Wilson Laboratory, Cornell University, CHESS, Ithaca, NY 14853 (United States)

    2011-09-01

    X-ray free electron lasers (XFELs) promise to revolutionize X-ray science with extremely high peak brilliances and femtosecond X-ray pulses. This will require novel detectors to fully realize the potential of these new sources. There are many current detector development projects aimed at the many challenges of meeting the XFEL requirements . This paper describes a pixel array detector (PAD) that has been developed for the Coherent X-ray Imaging experiment at the Linac Coherent Light Source (LCLS) at the SLAC National Laboratory . The detector features 14-bit in-pixel digitization; a 2-level in-pixel gain setting that can be used to make an arbitrary 2-D gain pattern that is adaptable to a particular experiment; the ability to handle instantaneous X-ray flux rates of 10{sup 17} photons per second; and continuous frames rates in excess of 120 Hz. The detector uses direct detection of X-rays in a silicon diode. The charge produced by the diode is integrated in a pixilated application specific integrated circuit (ASIC) which digitizes collected holes with single X-ray photon capability. Each ASIC is 194x185 pixels, each pixel is 110{mu}mx110{mu}m on a side. Each pixel can detect up to 2500 X-rays per frame in low-gain mode, yet easily detects single photons at high-gain. Cooled, single-chip detectors have been built and meet all the required specifications. SLAC National Laboratory is engaged in constructing a tiled, multi-chip 1516x1516 pixel detector.

  6. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    International Nuclear Information System (INIS)

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects

  7. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors

    OpenAIRE

    Calderón, Y.; Chmeissani, M.; Kolstein, M.; De Lorenzo, G.

    2014-01-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm2 area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm3. The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(G...

  8. Simulation of guard ring influence on the performance of ATLAS pixel detectors for inner layer replacement

    Energy Technology Data Exchange (ETDEWEB)

    Benoit, M; Lounis, A; Dinu, N [Laboratoire de l' accelerateur lineaire, Orsay (France)], E-mail: Benoit@lal.in2p3.fr

    2009-03-15

    Electric field magnitude and depletion in the bulk of silicon pixel detectors, which influence its breakdown behaviour, was studied using finite-element method to solve the drift-diffusion equation coupled to Poisson's equation in a simplified two dimensional model of the ATLAS pixel sensor. Based on this model, the number of guard rings and dead edges width were modified to investigate their influence on the detector's depletion at the edge and on its internal electrical field distribution. Finally, the 3 level model was implemented into the simulation to study the behaviour of such detector under different level of irradiation.

  9. The Layer 1 / Layer 2 readout upgrade for the ATLAS Pixel Detector

    CERN Document Server

    Mullier, Geoffrey; The ATLAS collaboration

    2016-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC). The increase of instantaneous luminosity foreseen during the LHC Run 2, will lead to an increased detector occupancy that is expected to saturate the readout links of the outermost layers of the pixel detector: Layers 1 and 2. To ensure a smooth data taking under such conditions, the read out system of the recently installed fourth innermost pixel layer, the Insertable B-Layer, was modified to accomodate the needs of the older detector. The Layer 2 upgrade installation took place during the 2015 winter shutdown, with the Layer 1 installation scheduled for 2016. A report of the successful installation, together with the design of novel dedicated optical to electrical converters and the software and firmware updates will be presented.

  10. The pixel hybrid photon detectors for the LHCb-RICH project

    CERN Document Server

    Gys, Thierry

    2001-01-01

    This paper describes a hybrid photon detector with integrated silicon pixel readout to be used in the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The paper starts with the general specification of the baseline option. Followed by a summary of the main results achieved so far during the R&D phase. It concludes with a description of the remaining work towards the final photon detector. (17 refs).

  11. Synchrotron radiation studies of spectral response features caused by Te inclusions in a large volume coplanar grid CdZnTe detector

    CERN Document Server

    Hansson, Conny C T; Quarati, Francesco; Kozorezov, Alexander; Gostilo, Vladimir; Lumb, David

    2011-01-01

    We report preliminary results from a synchrotron radiation study of Te inclusions in a large volume single crystal CdZnTe (CZT) coplanar-grid detector. The experiment was carried out by probing individual inclusions with highly collimated monochromatic X-and gamma-ray beams. It was found that for shallow X-ray interaction depths, the effect of an inclusion on measured energy loss spectra is to introduce a ~10% shift in the peak centroid energy towards lower channel numbers. The total efficiency is however not affected, showing that the net result of inclusions is a reduction in the Charge Collection Efficiency (CCE). For deeper interaction depths, the energy-loss spectra shows the emergence of two distinct peaks, both downshifted in channel number. We note that the observed spectral behavior shows strong similarities with that reported in semiconductors which exhibit polarization effects, suggesting that the underlying mechanism is common.

  12. Design, production and first operation of the ALICE Silicon Pixel Detector system

    CERN Document Server

    Kluge, A; Antinori, F; Burns, M; Cali, I A; Campbell, M; Caselle, M; Cavicchioli, C; Dima, R; Elia, D; Fabris, D; Krivda, M; Librizzi, F; Manzari, V; Marangio, G; Morel, M; Moretto, S; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato Matos, C; Turrisi, R; Tydesjol, H; Viesti, G

    2008-01-01

    The ALICE Silicon Pixel Detector (SPD) constitutes the two innermost barrel layers of the ALICE experiment. The SPD is the detector closest to the interaction point, mounted around the beam pipe with the two layers at r=3.9 cm and 7.6 cm distance from beam axis. In order to reduce multiple scattering the material budget per layer in the active region has been limited to ≈1% X0. The SPD consists of 120 hybrid silicon pixel detectors modules with a total of ~107 cells. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The readout electronics, located in the control room, is housed in 20 VME boards; it is the interface to the ALICE trigger, data acquisition, control system and detector electronics. In this contribution the SPD detector components design and production are reviewed. First operation results are reported.

  13. DEPFET Active Pixel Detectors for a Future Linear e(+}e({-)) Collider

    Science.gov (United States)

    Alonso, O.; Casanova, R.; Dieguez, A.; Dingfelder, J.; Hemperek, T.; Kishishita, T.; Kleinohl, T.; Koch, M.; Kruger, H.; Lemarenko, M.; Lutticke, F.; Marinas, C.; Schnell, M.; Wermes, N.; Campbell, A.; Ferber, T.; Kleinwort, C.; Niebuhr, C.; Soloviev, Y.; Steder, M.; Volkenborn, R.; Yaschenko, S.; Fischer, P.; Kreidl, C.; Peric, I.; Knopf, J.; Ritzert, M.; Curras, E.; Lopez-Virto, A.; Moya, D.; Vila, I.; Boronat, M.; Esperante, D.; Fuster, J.; Garcia, I. Garcia; Lacasta, C.; Oyanguren, A.; Ruiz, P.; Timon, G.; Vos, M.; Gessler, T.; Kuhn, W.; Lange, S.; Munchow, D.; Spruck, B.; Frey, A.; Geisler, C.; Schwenker, B.; Wilk, F.; Barvich, T.; Heck, M.; Heindl, S.; Lutz, O.; Muller, Th.; Pulvermacher, C.; Simonis, H. J.; Weiler, T.; Krausser, T.; Lipsky, O.; Rummel, S.; Schieck, J.; Schluter, T.; Ackermann, K.; Andricek, L.; Chekelian, V.; Chobanova, V.; Dalseno, J.; Kiesling, C.; Koffmane, C.; Gioi, L. Li; Moll, A.; Moser, H. G.; Muller, F.; Nedelkovska, E.; Ninkovic, J.; Petrovics, S.; Prothmann, K.; Richter, R.; Ritter, A.; Ritter, M.; Simon, F.; Vanhoefer, P.; Wassatsch, A.; Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Scheirich, J.

    2013-04-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\\mathrm{\\mathbf{\\mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\\mathbf{e^+ e^-}$ collider.

  14. DEPFET active pixel detectors for a future linear e+e− collider

    CERN Document Server

    Vos, M

    2010-01-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 µm. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear e^+e^− collider.

  15. Calibration of the CMS Pixel Detector at the Large Hadron Collider

    CERN Document Server

    Vami, Tamas Almos

    2015-01-01

    The Compact Muon Solenoid (CMS) detector is one of two general-purpose detectors that reconstruct the products of high energy particle interactions at the Large Hadron Collider (LHC) at CERN. The silicon pixel detector is the innermost component of the CMS tracking system. It determines the trajectories of charged particles originating from the interaction region in three points with high resolution enabling precise momentum and impact parameter measurements in the tracker. The pixel detector is exposed to intense ionizing radiation generated by particle collisions in the LHC. This irradiation could result in temporary or permanent malfunctions of the sensors and could decrease the efficiency of the detector. We have developed procedures in order to correct for these effects. In this paper, we present the types of malfunctions and the offline calibration procedures. We will also show the efficiency and the resolution of the detector in 2012.

  16. Physics performance and upgrade for Run II of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The ATLAS pixel detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle trajectories in the high radiation environment close to the collision region. The operation and performance of the pixel detector during the first years of LHC running are described. More than 96% of the detector modules were operational during this period, with an average intrinsic hit efficiency larger than 99%. The alignment of the detector was found to be stable at the few-micron level over long periods of time. Detector material description, tracking performances in Run I and expectations for the upcoming Run II are presented

  17. Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC

    Science.gov (United States)

    Alagoz, E.; Bubna, M.; Krzywda, A.; Dalla Betta, G. F.; Povoli, M.; Obertino, M. M.; Solano, A.; Vilela Pereira, A.; Arndt, K.; Bolla, G.; Bortoletto, D.; Boscardin, M.; Kwan, S.; Rivera, R.; Shipsey, I.; Uplegger, L.

    2012-08-01

    The CMS pixel detector is the innermost tracking device at the LHC, reconstructing interaction vertices and charged particle trajectories. The current planar sensors located in the innermost layer of the pixel detector will be exposed to very high fluences which will degrade their performances. As a possible replacement for planar pixel sensors in the High Luminosity-LHC (HL-LHC), 3D silicon technology is under consideration due to its expected good performance in harsh radiation environments. Studies are also in progress for using 3D silicon pixel detectors in near-beam proton spectrometers at the LHC. Deep Reactive Ion Etching (DRIE) plays a key role in fabricating 3D silicon detectors in which readout and ohmic electrodes are processed through the silicon substrate instead of being implanted on the silicon surface. 3D pixel devices considered in this study were processed at FBK (Trento, Italy), bump bonded to the CMS pixel readout chip, and characterized in the laboratory. Numerical simulations were also carried out. We report on selected results from laboratory measurements and TCAD simulations.

  18. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Yosuke

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detect or and of the IBL project as...

  19. The upgraded Pixel Detector of the ATLAS experiment for Run-2 at the Large Hadron Collider

    International Nuclear Information System (INIS)

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC) . Taking advantage of Long Shutdown 1 (LS1) during 2014/2015, the Pixel Detector was brought to surface to equip it with new service panels and to repair modules. The Insertable B-Layer (IBL), a fourth layer of pixel sensors, was installed in-between the existing Pixel Detector and a new beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) were used and a new readout chip has been designed with CMOS 130 nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performance. An overview of the lessons learned during the IBL project is presented, focusing on the challenges and highlighting the issues met during the production, integration, installation and commissioning phases of the detector. Early performance tests using cosmic and beam data are also presented

  20. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy

    CERN Document Server

    Tate, Mark W; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert M; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

    2015-01-01

    We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as loc...

  1. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    Science.gov (United States)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  2. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    International Nuclear Information System (INIS)

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an infarct

  3. A study on the shielding mechanisms of SOI pixel detector

    OpenAIRE

    Lu, Yunpeng; Liu, Yi; Wu, Zhigang; Ouyang, Qun; Arai, Yasuo

    2015-01-01

    In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS process. A TCAD simulation showed the shielding effectiveness influenced by the high sheet resistance of shielding layers. Test structures specially designed to measure the crosstalk associated to charge injection were implemented in CPIXTEG3/3b. Measuremen...

  4. Energy loss and online directional track visualization of fast electrons with the pixel detector Timepix

    Czech Academy of Sciences Publication Activity Database

    Granja, C.; Krist, Pavel; Chvátil, David; Šolc, J.; Pospíšil, S.; Jakubek, J.; Opalka, L.

    2013-01-01

    Roč. 59, DEC (2013), s. 245-261. ISSN 1350-4487 Grant ostatní: GA MŠk(CZ) MSM6840770029 Institutional support: RVO:61389005 Keywords : interaction of radiation with matter * dE/dx detector s * particle tracking detector s * hybrid pixel detector s * active nuclear emulsion * energy loss Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.140, year: 2013

  5. Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors

    International Nuclear Information System (INIS)

    In the last decade, the Detector Development Group at the Technology Department of the Science and Technology Facilities Council (STFC), U.K., established a variety of fabrication and bonding techniques to build pixelated X-ray and γ-ray detector systems such as the spectroscopic X-ray imaging detector HEXITEC [1]. The fabrication and bonding of such devices comprises a range of processes including material surface preparation, photolithography, stencil printing, flip-chip and wire bonding of detectors to application-specific integrated circuits (ASIC). This paper presents interconnect and bonding techniques used in the fabrication chain for pixelated detectors assembled at STFC. For this purpose, detector dies (∼ 20× 20 mm2) of high quality, single crystal semiconductors, such as cadmium zinc telluride (CZT) are cut to the required thickness (up to 5mm). The die surfaces are lapped and polished to a mirror-finish and then individually processed by electroless gold deposition combined with photolithography to form 74× 74 arrays of 200 μ m ×  200 μ m pixels with 250 μ m pitch. Owing to a lack of availability of CZT wafers, lithography is commonly carried out on individual detector dies which represents a significant technical challenge as the edge of the pixel array and the surrounding guard band lies close to the physical edge of the crystal. Further, such detector dies are flip-chip bonded to readout ASIC using low-temperature curing silver-loaded epoxy so that the stress between the bonded detector die and the ASIC is minimized. In addition, this reduces crystalline modifications of the detector die that occur at temperature greater than 150/r{ }C and have adverse effects on the detector performance. To allow smaller pitch detectors to be bonded, STFC has also developed a compression cold-weld indium bump bonding technique utilising bumps formed by a photolithographic lift-off technique

  6. ATLAS SemiConductor Tracker and Pixel Detector: Status and Performance

    CERN Document Server

    Reeves, K; The ATLAS collaboration

    2012-01-01

    The Semi-Conductor Tracker (SCT) and the Pixel Detector are the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is a silicon strip detector and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. The Pixel Detector consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In the talk the current status of the SCT and Pixel Detector will be reviewed. We will report on the operation of the detectors including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk ...

  7. Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

    International Nuclear Information System (INIS)

    Recent progress in pixel detector technology in general and in the HV-MAPS technology in particular make it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS or CMS. Previous studies have indicated that six to nine layers of pixel sensors, in comparison to the 14 detector layers planned for Inner Tracker ATLAS upgrade, are sufficient to reliably reconstruct particle trajectories. The performance of an all-pixel detector and the minimum number of required pixel layers is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

  8. Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

    Energy Technology Data Exchange (ETDEWEB)

    Blago, Michele Piero; Schoening, Andre [Physikalisches Institut, Heidelberg Univ. (Germany)

    2015-07-01

    Recent progress in pixel detector technology in general and in the HV-MAPS technology in particular make it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS or CMS. Previous studies have indicated that six to nine layers of pixel sensors, in comparison to the 14 detector layers planned for Inner Tracker ATLAS upgrade, are sufficient to reliably reconstruct particle trajectories. The performance of an all-pixel detector and the minimum number of required pixel layers is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

  9. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, Heinz; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and hit occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as we...

  10. A new generation of small pixel pitch/SWaP cooled infrared detectors

    Science.gov (United States)

    Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

    2015-10-01

    Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

  11. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    During Run-1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This includes the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore a new readout chip and two new sensor technologies (planar and 3D) are used in IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanic...

  12. Pre- and post-irradiation performance of FBK 3D silicon pixel detectors for CMS

    Energy Technology Data Exchange (ETDEWEB)

    Krzywda, A., E-mail: akrzywda@purdue.edu [Purdue University, Department of Physics and Astronomy, West Lafayette, IN 47907-2036 (United States); Alagoz, E.; Bubna, M. [Purdue University, Department of Physics and Astronomy, West Lafayette, IN 47907-2036 (United States); Obertino, M. [Università del Piemonte Orientale, Novara (Italy); INFN, Sezione di Torino, Torino (Italy); Solano, A. [Università di Torino, Torino (Italy); INFN, Sezione di Torino, Torino (Italy); Arndt, K. [Purdue University, Department of Physics and Astronomy, West Lafayette, IN 47907-2036 (United States); Uplegger, L. [Fermi National Accelerator Laboratory, Batavia, IL 60510-5011 (United States); Betta, G.F. Dalla [TIFPA INFN and Dipartimento di Ingegneria Industriale, Università di Trento, Via Sommarive 9, I-38123 Povo di Trento, TN (Italy); Boscardin, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Trento, Via Sommarive 18, I-38123 Povo di Trento, TN (Italy); Ngadiuba, J. [Università di Milano-Bicocca, Milan (Italy); Rivera, R. [Fermi National Accelerator Laboratory, Batavia, IL 60510-5011 (United States); Menasce, D.; Moroni, L.; Terzo, S. [Università di Milano-Bicocca, Milan (Italy); Bortoletto, D. [Purdue University, Department of Physics and Astronomy, West Lafayette, IN 47907-2036 (United States); Prosser, A.; Adreson, J.; Kwan, S. [Fermi National Accelerator Laboratory, Batavia, IL 60510-5011 (United States); Osipenkov, I. [Texas A and M University, Department of Physics, College Station, TX 77843 (United States); Bolla, G. [Purdue University, Department of Physics and Astronomy, West Lafayette, IN 47907-2036 (United States); and others

    2014-11-01

    In preparation for the tenfold luminosity upgrade of the Large Hadron Collider (the HL-LHC) around 2020, three-dimensional (3D) silicon pixel sensors are being developed as a radiation-hard candidate to replace the planar ones currently being used in the CMS pixel detector. This study examines an early batch of FBK sensors (named ATLAS08) of three 3D pixel geometries: 1E, 2E, and 4E, which respectively contain one, two, and four readout electrodes for each pixel, passing completely through the bulk. We present electrical characteristics and beam test performance results for each detector before and after irradiation. The maximum fluence applied is 3.5×10{sup 15} n {sub eq}/cm{sup 2}.

  13. NIRSpec detectors: noise properties and the effect of signal dependent inter-pixel crosstalk

    Science.gov (United States)

    Giardino, Giovanna; Sirianni, Marco; Birkmann, Stephan M.; Rauscher, Bernard J.; Lindler, Don; Boeker, Torsten; Ferruit, Pierre; De Marchi, Guido; Stuhlinger, Martin; Jensen, Peter; Strada, Paolo

    2012-07-01

    NIRSpec (Near Infrared Spectrograph) is one of the four science instruments of the James Webb Space Telescope (JWST) and its focal plane consists of two HAWAII-2RG sensors operating in the wavelength range 0.6-5.0μm. As part of characterizing NIRSpec, we studied the noise properties of these detectors under dark and illuminated conditions. Under dark conditions, and as already known, 1/f noise in the detector system produces somewhat more noise than can be accounted for by a simple model that includes white read noise and shot noise on integrated charge. More surprisingly, at high flux, we observe significantly lower total noise levels than expected. We show this effect to be due to pixel-to-pixel correlations introduced by signal dependent inter-pixel crosstalk, with an inter-pixel coupling factor, α, that ranges from ~ 0.01 for zero signal to ~ 0.03 close to saturation.

  14. Evaluation of a Wobbling Method Applied to Correcting Defective Pixels of CZT Detectors in SPECT Imaging.

    Science.gov (United States)

    Xie, Zhaoheng; Li, Suying; Yang, Kun; Xu, Baixuan; Ren, Qiushi

    2016-01-01

    In this paper, we propose a wobbling method to correct bad pixels in cadmium zinc telluride (CZT) detectors, using information of related images. We build up an automated device that realizes the wobbling correction for small animal Single Photon Emission Computed Tomography (SPECT) imaging. The wobbling correction method is applied to various constellations of defective pixels. The corrected images are compared with the results of conventional interpolation method, and the correction effectiveness is evaluated quantitatively using the factor of peak signal-to-noise ratio (PSNR) and structural similarity (SSIM). In summary, the proposed wobbling method, equipped with the automatic mechanical system, provides a better image quality for correcting defective pixels, which could be used for all pixelated detectors for molecular imaging. PMID:27240368

  15. Medipix3: A 64 k pixel detector readout chip working in single photon counting mode with improved spectrometric performance

    International Nuclear Information System (INIS)

    Medipix3 is a 256x256 channel hybrid pixel detector readout chip working in a single photon counting mode with a new inter-pixel architecture, which aims to improve the energy resolution in pixelated detectors by mitigating the effects of charge sharing between channels. Charges are summed in all 2x2 pixel clusters on the chip and a given hit is allocated locally to the pixel summing circuit with the biggest total charge on an event-by-event basis. Each pixel contains also two 12-bit binary counters with programmable depth and overflow control. The chip is configurable such that either the dimensions of each detector pixel match those of one readout pixel or detector pixels are four times greater in area than the readout pixels. In the latter case, event-by-event summing is still possible between the larger pixels. Each pixel has around 1600 transistors and the analog static power consumption is below 15 μW in the charge summing mode and 9 μW in the single pixel mode. The chip has been built in an 8-metal 0.13 μm CMOS technology. This paper describes the chip from the pixel to the periphery and first electrical results are summarized.

  16. Low-cost bump-bonding processes for high energy physics pixel detectors

    Science.gov (United States)

    Caselle, M.; Blank, T.; Colombo, F.; Dierlamm, A.; Husemann, U.; Kudella, S.; Weber, M.

    2016-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15 μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30 μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The short setup time for the bumping process makes gold-stud bump-bonding highly attractive (and affordable) for the flip-chipping of single prototype ICs, which is the main limitation of the current photolithography processes.

  17. \\title{Low-Cost Bump-Bonding Processes for High Energy Physics Pixel Detectors}

    CERN Document Server

    Caselle, Michele; Colombo, Fabio; Dierlamm, Alexander Hermann; Husemann, Ulrich; Kudella, Simon; Weber, M

    2015-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area at reasonable costs are required. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of the production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin ($15\\,\\rm{\\mu m}$) gold wire is presented. This technique allows producing metal bumps with diameters down to $30\\,\\rm{\\mu m}$ without using photolithography processes, which are typically required to provide suitable under bu...

  18. Low-cost bump-bonding processes for high energy physics pixel detectors

    International Nuclear Information System (INIS)

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The short setup time for the bumping process makes gold-stud bump-bonding highly attractive (and affordable) for the flip-chipping of single prototype ICs, which is the main limitation of the current photolithography processes

  19. Studies for the detector control system of the ATLAS pixel at the HL-LHC

    International Nuclear Information System (INIS)

    In the context of the LHC upgrade to the HL-LHC the inner detector of the ATLAS experiment will be replaced completely. As part of this redesign there will also be a new pixel detector. This new pixel detector requires a control system which meets the strict space requirements for electronics in the ATLAS experiment. To accomplish this goal we propose a DCS (Detector Control System) network with the smallest form factor currently available. This network consists of a DCS chip located in close proximity to the interaction point and a DCS controller located in the outer regions of the ATLAS detector. These two types of chips form a star shaped network with several DCS chips being controlled by one DCS controller. Both chips are manufactured in deep sub-micron technology. We present prototypes with emphasis on studies concerning single event upsets.

  20. Status and Plan for The Upgrade of The CMS Pixel Detector

    CERN Document Server

    Lu, Rong-Shyang

    2014-01-01

    The silicon pixel detector is the innermost component of the CMS tracking system and plays a crucial role in the all-silicon CMS tracker. While the current pixel tracker is designed for and performing well at an instantaneous luminosity of up to $\\rm 1\\times 10^{34}cm^{-2}s^{-1}$, it can no longer be operated efficiently at significantly higher values. Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity are likely to be reached before 2018 and perhaps significantly exceeded in the running period until 2022, referred to as LHC Run 3. Therefore, an upgraded pixel detector, referred to as the phase 1 upgrade, is planned for the year-end technical stop in 2016. With a new pixel readout chip (ROC), an additional fourth layer, two additional endcap disks, and a significantly reduced material budget the upgraded pixel detector will be able to sustain the efficiency of the pixel tracker at the increased requirements imposed by high lumin...

  1. Novel module production methods for the CMS pixel detector, upgrade phase I

    Science.gov (United States)

    Blank, T.; Caselle, M.; Weber, M.; Kudella, S.; Colombo, F.; Hansen, K.; Arab, S.

    2015-02-01

    For the High-Luminosity upgrade of the LHC (HL-LHC), phase I, the CMS pixel detector needs to be replaced. In order to improve the tracking resolution even at high luminosity the pixel detector is upgraded by a fourth barrel layer. This paper describes the production process and results for the fourth barrel layer for the CMS silicon pixel detector, upgrade phase I. The additional barrel layer will be produced by KIT and DESY. Both research centers have commonly developed and investigated new production processes, including SAC solder bump jetting, gold stud bumping and "Precoat by Powder Processes" (PPS) to bump the sensor tiles and prepare them for the flip-chip process. First bare modules have been produced with the new digital ROC.

  2. Operating characteristics of radiation-hardened silicon pixel detectors for the CMS experiment

    CERN Document Server

    Hyosung, Cho

    2002-01-01

    The Compact Muon Solenoid (CMS) experiment at the CERN Large Hadron Collider (LHC) will have forward silicon pixel detectors as its innermost tracking device. The pixel devices will be exposed to the harsh radiation environment of the LHC. Prototype silicon pixel detectors have been designed to meet the specification of the CMS experiment. No guard ring is required on the n/sup +/ side, and guard rings on the p/sup +/ side are always kept active before and after type inversion. The whole n/sup +/ side is grounded and connected to readout chips, which greatly simplifies detector assembling and improves the stability of bump-bonded readout chips on the n/sup +/ side. Operating characteristics such as the leakage current, the full depletion voltage, and the potential distributions over guard rings were tested using standard techniques. The tests are discussed in this paper. (9 refs).

  3. Test of prototypes of the ALICE silicon pixel detector in a multi-track environment

    Science.gov (United States)

    Pulvirenti, A.; Anelli, G.; Antinori, F.; Badalà, A.; Bruno, G. E.; Burns, M.; Cali, I. A.; Campbell, M.; Caselle, M.; Ceresa, S.; Chocula, P.; Cinausero, M.; Conrad, J.; Dima, R.; Elia, D.; Fabris, D.; Fini, R. A.; Fioretto, E.; Kapusta, S.; Kluge, A.; Krivda, M.; Lenti, V.; Librizzi, F.; Lunardon, M.; Manzari, V.; Morel, M.; Moretto, S.; Osmic, F.; Pappalardo, G. S.; Paticchio, V.; Pepato, A.; Prete, G.; Riedler, P.; Riggi, F.; Sandor, L.; Santoro, R.; Scarlassara, F.; Segato, G.; Soramel, F.; Stefanini, G.; Torcato de Matos, C.; Turrisi, R.; Vannucci, L.; Viesti, G.; Virgili, T.

    2006-09-01

    The silicon pixel detector (SPD) comprises the two innermost layers of the ALICE Inner Tracking System (ITS). It is instrumented with arrays of hybrid pixels made out of 150 μm thick ASICs, each containing 8192 readout cells, bump bonded to 200 μm thick silicon sensors. The dimensions of the pixel cells are 50 μm ( rϕ)×425 μm ( z). Prototype assemblies have been tested in high-energy particle beams at the CERN SPS. The results of measurements in a multi-track environment, from interactions of an In beam at 158 AGeV on a Pb target, are reported.

  4. Study of the internal mechanisms of Pixelized Photon Detectors operated in Geiger-mode

    OpenAIRE

    Otono, H.(Department of Physics, Kyushu University, Fukuoka, Japan); Oide, H.; Yamashita, S.; Yoshioka, T.; Yamamoto, K; Yamamura, K; Sato, K.

    2008-01-01

    In the 1990s, a novel semiconductor photon-sensor operated in Geiger-mode was invented in Russia (Silicon PhotoMultiplier), which consists of many tiny pixels and has a single photon level sensitivity. Since then, various types of the sensor with this scheme, Pixelized Photon Detectors (PPD), have been developed in many places in the world. For instance, Hamamatsu Photonics K.K. in Japan produces the PPD as a Multi-Pixel Photon Counter. While the internal mechanisms of the PPD have been inten...

  5. 14C autoradiography with an energy-sensitive silicon pixel detector

    International Nuclear Information System (INIS)

    The first performance tests are presented of a carbon-14 (14C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 μm thick silicon detector with 256 x 256 pixels of 55 μm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) x 10-3 cps mm-2 kBq-1 g, background level, (3.59 ± 0.01) x 10-5 cps mm-2, and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 μm full-width at half-maximum. These figures are compared with several digital imaging detectors for 14C beta-particle digital autoradiography.

  6. Performance of the Insertable B-Layer for the ATLAS Pixel Detector during Quality Assurance and a Novel Pixel Detector Readout Concept based on PCIe

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00356268; Pernegger, Heinz

    2016-07-27

    During the first long shutdown of the LHC the Pixel detector has been upgraded with a new 4th innermost layer, the Insertable B-Layer (IBL). The IBL will increase the tracking performance and help with higher than nominal luminosity the LHC will produce. The IBL is made up of 14 staves and in total 20 staves have been produced for the IBL. This thesis presents the results of the final quality tests performed on these staves in an detector-like environment, in order to select the 14 best of the 20 staves for integration onto the detector. The test setup as well as the testing procedure is introduced and typical results of each testing stage are shown and discussed. The overall performance of all staves is presented in regards to: tuning performance, radioactive source measurements, and number of failing pixels. Other measurement, which did not directly impact the selection of staves, but will be important for the operation of the detector or production of a future detector, are included. Based on the experienc...

  7. High resolution radiography of ambers with pixel detectors

    Czech Academy of Sciences Publication Activity Database

    Dammer, J.; Weyda, F.; Beneš, J.; Sopko, V.; Jandejsek, I.; Pflegerová, Jitka

    2013-01-01

    Roč. 8, č. 3 (2013), C03024. ISSN 1748-0221. [Conference: International Workshop on Radiation Imaging Detector s /14./. Figueira da Foz, 01.07.2012-05.07.2012] Grant ostatní: GA ČR(CZ) GA103/09/2101; GA Mšk(CZ) LA08032 Institutional support: RVO:60077344 Keywords : X-ray detector s * Inspection with x-rays * X-ray radiography and digital radiography (DR) Subject RIV: EA - Cell Biology Impact factor: 1.526, year: 2013 http://iopscience.iop.org/1748-0221/8/03/C03024/

  8. Performance and applications of a high rate imaging pixel detector

    CERN Document Server

    Pavel, N A; Menk, R; Sarvestani, A; Sauer, N; Stiehler, R; Walenta, Albert H

    2002-01-01

    In the past years a large variety of gas filled micro pattern detectors have been developed for applications in high energy physics as well as for X-ray imaging in synchrotron light experiments. Here, we present the most recent developments on the MicroCAT detector with resistive position encodeing readout, which has been demonstrated to meet even the strong requirements in high resolution protein crystallography and time resolved small angle scattering at synchrotron light sources of the third generation. Recent test measurements with the prototype under the working conditions of a synchrotron light source as well as high time resolved measurements in the laboratory are presented.

  9. The ONSEN Data Reduction System for the Belle II Pixel Detector

    CERN Document Server

    Geßler, Thomas; Lange, Jens Sören; Liu, Zhen'An; Münchow, David; Spruck, Björn; Zhao, Jingzhou

    2015-01-01

    We present an FPGA-based online data reduction system for the pixel detector of the future Belle II experiment. The occupancy of the pixel detector is estimated at 3 %. This corresponds to a data output rate of more than 20 GB/s after zero suppression, dominated by background. The Online Selection Nodes (ONSEN) system aims at reducing the background data by a factor of 30. It consists of 33 MicroTCA cards, each equipped with a Xilinx Virtex-5 FPGA and 4 GiB DDR2 RAM. These cards are hosted by 9 AdvancedTCA carrier boards. The ONSEN system buffers the entire output data from the pixel detector for up to 5 seconds. During this time, the Belle II high-level trigger PC farm performs an online event reconstruction, using data from the other Belle II subdetectors. It extrapolates reconstructed tracks to the layers of the pixel detector and defines regions of interest around the intercepts. Based on this information, the ONSEN system discards all pixels not inside a region of interest before sending the remaining hi...

  10. Beam test characterization of CMS silicon pixel detectors for the phase-1 upgrade

    International Nuclear Information System (INIS)

    The Silicon Pixel Detector forms the innermost part of the CMS tracking system and is critical to track and vertex reconstruction. Being in close proximity to the beam interaction point, it is exposed to the highest radiation levels in the silicon tracker. In order to preserve the tracking performance with the LHC luminosity increase which is foreseen for the next years, the CMS collaboration has decided to build a new pixel detector with four barrel layers mounted around a reduced diameter beam pipe, as compared to the present three layer pixel detector in the central region. A new digital version of the front-end readout chip has been designed and tested; it has increased data buffering and readout link speed to maintain high efficiency at increasing occupancy. In addition, it offers lower charge thresholds that will improve the tracking efficiency and position resolution. Single chip modules have been evaluated in the DESY electron test beam in terms of charge collection, noise, tracking efficiency and position resolution before and after irradiation with 24 GeV protons from the CERN Proton Synchroton equivalent to the fluence expected after 500 fb−1 of integrated luminosity in the fourth layer of the pixel tracker. High efficiency and an excellent position resolution have been observed which are well maintained even after the proton irradiation. The results are well described by the CMS pixel detector simulation

  11. The Pixel Detector of the ATLAS Experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO$_2$ based cooling system have been adopted. The IBL construction and installation in the ATLAS Experiment has been completed very successfu...

  12. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  13. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  14. The Pixel Detector of the ATLAS experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is the fourth layer of the Run 2 Pixel Detector, and it was installed in May 2014 between the existing Pixel Detector and the new smaller-radius beam pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project...

  15. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Mullier, Geoffrey Andre; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed. A new readout chip has been developed within CMOS 130nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performan...

  16. Geneva University: Pixel Detectors – trends and options for the future

    CERN Multimedia

    Geneva University

    2012-01-01

    GENEVA UNIVERSITY École de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92   Wednesday 25 April 2012 SEMINAIRE DE PHYSIQUE CORPUSCULAIRE Science III, Auditoire 1S081 30Science III, Auditoire 1S081 30 Pixel Detectors – trends and options for the future Prof. Norbert Wermes - University of Bonn  Pixel detectors have been invented in the early 90s with the advancement of micro technologies. With the advent of the LHC, big vertex detectors have demonstrated that the pixel detector type is holding many of the promises it had made before. Meanwhile new, different or just improved variants of the pixel technology are being studied for their suitability for future experiments or experiment upgrades. The talk will address the various pro's and con's comparing hybrid and monolithic pixel technologies and their su...

  17. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  18. Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation

    CERN Document Server

    Andreazza, A; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit ...

  19. Simulation of active-edge pixelated CdTe radiation detectors

    OpenAIRE

    Duarte, DD; Lipp, JD; Schneider, A.; Seller, P; Veale, MC; Wilson, MD; Baker, MA; Sellin, PJ

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper sh...

  20. A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Gorelov, Igor; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.