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Sample records for cdznte pixel detectors

  1. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...... report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

  2. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm2) or 256 (0.5x0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 oC. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  3. Fabrication of pixelated CdTe and CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) are compound semiconductor characterized by wide semiconducting band gap and high photon stopping power due to its high atomic number and density. The mobility-life time product (μ t product) for holes in the materials is smaller than that for electrons. Hence, the effect of trapping losses is more pronounced on holes than on electrons. The trapping losses for holes limit achievable energy resolutions for planar detectors. In this study, pixelated CdTe detectors and pixelated CdZnTe detectors were fabricated and tested by 662 KeV gamma-rays of 137Cs at room temperature. Electrodes were formed on both sides of CdTe crystals and CdZnTe crystals by vacuum evaporation of gold. For purpose of comparison, a planar CdTe detector and a planar CdZnTe detector were evaluated. Since the pixelated CdTe detectors and the pixelated CdZnTe detectors operated as a single-polarity charge sensing device, the obtained energy resolutions were significantly higher than those for the planar detectors. Further improvement of energy resolutions of the detectors will be achieved by optimizing electrode structures. (M. Suetake)

  4. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector

    International Nuclear Information System (INIS)

    Using the pixellated CdZnTe detector,the radiation imaging experiment for the Rh target X-ray source was accomplished. The experimental results indicate that the response signals of the anode pixels, which distribute over the center irradiated area,are completely shut-off when the tube Jantage is 45 kV and the tube current increases to 20 μA. Moreover, the non-response pixel area expands with the increase of the tube current, and the total event count of the CdZnTe detector reduces obviously. Furthermore, the inner electric potential and electric field distributions of the pixellated CdZnTe detector were simulated based on the Poisson equation. The simulation results reveal that the accumulation of the hole carriers, which results from the extremely low drift ability of the hole carrier, leads to a relatively high space-charge-density area in the CdZnTe bulk when the irradiated photon flux increases to 5 x 105 mm-2·s-1. And thus, the induced signal screen effect of the anode pixels in the center irradiated area is mainly attributed to the distorted electric field which makes electron carriers drift toward the high potential area in the CdZnTe crystal instead of the pixel anodes. (authors)

  5. Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.;

    2002-01-01

    We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition......-collection efficiency in detectors with multicontact geometry; some fraction of the electric field lines that originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect, we place a grid of thin electrodes...

  6. Gas filled prototype of a CdZnTe pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Ramsey, B.; Sharma, D.; Sipila, H.; Gostilo, V. E-mail: bsi@bsi.lv; Loupilov, A

    2001-06-01

    CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5-100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 (2001) 55) we presented preliminary results on the development of prototype 4x4 CdZnTe imaging detectors operated under vacuum. These pixel detectors were installed inside vacuum chambers on three-stage Peltier coolers providing detector temperatures down to -40 deg. C. A miniature sputter ion pump inside each chamber maintained the necessary vacuum of 10{sup -5} Torr. At a temperature of -20 deg. C we achieved an FWHM energy resolution of between 2% and 3% at 60 keV and {approx}15% at 5.9 keV; however, the dependency on temperature was weak and at +20 deg. C the respective resolutions were 3% and 20%. As the detectors could be operated at room temperature without loss of their good characteristics it was possible to exclude the sputter ion pump and fill the chamber with dry nitrogen instead. We have tested a nitrogen-filled CdZnTe (5x5x1 mm{sup 3}) prototype having 0.65x0.65 mm{sup 2} readout pads on a 0.75 mm pitch. The interpixel resistance at an applied voltage of 10 V was higher than 50 G{omega} and the pixel leakage currents at room temperature with a bias of 200 V between each pad and the common electrode did not exceed 0.8 nA. The pixel detector inside the microassembly, which also contained the input stages of the preamplifiers, was installed on a Peltier cooler to maintain the detector temperature at +20 deg. C. To define real leakage currents of the pixels in their switched-on state we have checked the voltage on the preamplifiers feedback resistors. The resulting currents were 10-50 pA at a detector bias of 500 V. Under test, the typical energy resolution per pixel at +20 deg. C was {approx}3% at energy 59.6 keV and {approx}20% at energy 5.9 keV, which are similar to the values obtained in the

  7. Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Gostilo, V.; Ivanov, V.; Kostenko, S.; Lisjutin, I.; Loupilov, A.; Nenonen, S.; Sipila, H.; Valpas, K

    2001-03-11

    Current and spectrometrical characteristics, stability in time and reliability of pixel and strip detectors depend on initial material properties, crystal processing quality and contacts manufacture technology. The work presents analysis of current-voltage and spectrometrical characteristics for initial CdTe and CdZnTe crystals applied for pixel and strip detectors manufacture. The crystal surface preparation before contacts manufacture comprises a modified technology. The contacts were made by photolithography with the surface protected by photoresist with further windows lift-off and crystal surface metallization in lifted-off windows. Metal pads were made by gold deposition from chloroauric acid. Thermocompression, ultrasonic and pulse wirebonding, as well as traditional contacts glueing method for CdTe and CdZnTe detectors have been tested for contacts wiring. The pulse wirebonding has revealed the best results. Wiring is made of gold wire with a diameter of 30 {mu}m and is good enough for pixel and strip wirebonding, providing rather low labour-intensiveness for their assembly by standard equipment. The possibility of fabrication of pressing contacts to strip and pixel detectors by Zebra elastomeric connectors has been investigated. The pressing contacts have provided qualitative and reliable electrical contact and signal layout from pixels and strips to readout electronics. Developed technologies were applied in the manufacture of the following CdTe and CdZnTe detectors: 4x4 pixels detector with rectangular pixels 0.65x0.65 mm and pitch 0.75 mm; 4x4 pixels ring miltiple-electrode detector with anode diameter 0.32 mm and pitch 0.75 mm; strip detector with 100 {mu}m width strip and 125 {mu}m pitch. The 4x4 pixels CdZnTe detector has provided at optimal temperature energy resolutions of 808 eV and 1.19 keV at energies of 5.9 and 59.6 keV, respectively. Interstrip resistance between two strips with a distance of 25 {mu}m on detector was 2-8 G{omega}.

  8. Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

    International Nuclear Information System (INIS)

    Current and spectrometrical characteristics, stability in time and reliability of pixel and strip detectors depend on initial material properties, crystal processing quality and contacts manufacture technology. The work presents analysis of current-voltage and spectrometrical characteristics for initial CdTe and CdZnTe crystals applied for pixel and strip detectors manufacture. The crystal surface preparation before contacts manufacture comprises a modified technology. The contacts were made by photolithography with the surface protected by photoresist with further windows lift-off and crystal surface metallization in lifted-off windows. Metal pads were made by gold deposition from chloroauric acid. Thermocompression, ultrasonic and pulse wirebonding, as well as traditional contacts glueing method for CdTe and CdZnTe detectors have been tested for contacts wiring. The pulse wirebonding has revealed the best results. Wiring is made of gold wire with a diameter of 30 μm and is good enough for pixel and strip wirebonding, providing rather low labour-intensiveness for their assembly by standard equipment. The possibility of fabrication of pressing contacts to strip and pixel detectors by Zebra elastomeric connectors has been investigated. The pressing contacts have provided qualitative and reliable electrical contact and signal layout from pixels and strips to readout electronics. Developed technologies were applied in the manufacture of the following CdTe and CdZnTe detectors: 4x4 pixels detector with rectangular pixels 0.65x0.65 mm and pitch 0.75 mm; 4x4 pixels ring miltiple-electrode detector with anode diameter 0.32 mm and pitch 0.75 mm; strip detector with 100 μm width strip and 125 μm pitch. The 4x4 pixels CdZnTe detector has provided at optimal temperature energy resolutions of 808 eV and 1.19 keV at energies of 5.9 and 59.6 keV, respectively. Interstrip resistance between two strips with a distance of 25 μm on detector was 2-8 GΩ

  9. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  10. Pixel detectors

    CERN Document Server

    Passmore, M S

    2001-01-01

    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  11. Modelling semiconductor pixel detectors

    CERN Document Server

    Mathieson, K

    2001-01-01

    expected after 200 ps in most cases. The effect of reducing the charge carrier lifetime and examining the charge collection efficiency has been utilised to explore how these detectors would respond in a harsh radiation environment. It is predicted that over critical carrier lifetimes (10 ps to 0.1 ns) an improvement of 40 % over conventional detectors can be expected. This also has positive implications for fabricating detectors, in this geometry, from materials which might otherwise be considered substandard. An analysis of charge transport in CdZnTe pixel detectors has been performed. The analysis starts with simulation studies into the formation of contacts and their influence on the internal electric field of planar detectors. The models include a number of well known defect states and these are balanced to give an agreement with a typical experimental I-V curve. The charge transport study extends to the development of a method for studying the effect of charge sharing in highly pixellated detectors. The ...

  12. Diamond Pixel Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Gobbi, B.; Grim, G.P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; Lynne, L.M.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L. E-mail: perera@physics.rutgers.edu; Pirollo, S.; Plano, R.; Procario, M.; Riester, J.L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M

    2001-06-01

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

  13. Diamond pixel detectors

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bognai, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Doroshenko, J; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foster, J; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Gobbi, B; Grim, G P; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lander, R; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Perera, L P; Pirollo, S; Plano, R; Procario, M; Riester, J L; Roe, S; Rott, C; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Wedenig, R; Weilhammer, Peter; White, C; Zeuner, W; Zöller, M

    2001-01-01

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles. (3 refs).

  14. Diamond Pixel Detectors

    International Nuclear Information System (INIS)

    Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles

  15. CMS pixel detector Overview

    CERN Document Server

    Cremaldi, L M

    2003-01-01

    An overview of the compact muon solenoid pixel detector effort is presented. Pixel detectors are being built for use at the large hadron collider beginning in the year 2007. It is reported that a good progress is made in 2002 on the critical issues of readout chip and token bit manager design, bump bonding and sensor testing. (Edited abstract) 8 Refs.

  16. Si, CdTe and CdZnTe radiation detectors for imaging applications

    OpenAIRE

    Schulman, Tom

    2006-01-01

    The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy Simage Ltd. And Oy Ajat Ltd., Finland for X- and gamma ray imaging are presented. This detector technology evolved from the development of Si strip detectors at the Finnish Research Institute for High Energy Physics (SEFT) which later merged with other physics research units to form the Helsinki Institute of Physics (HIP). General ...

  17. Noise in CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Luke, P. N.; Amman, M.; Lee J. S.; Manfredi, P. F.

    2000-10-10

    Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments.

  18. The pixelated detector

    CERN Multimedia

    Sutton, C

    1990-01-01

    "Collecting data as patterns of light or subatomic particles is vitally important in all the sciences. The new generation of solid-state detectors called pixel devices could transform experimental research at all levels" (4 pages).

  19. SOI monolithic pixel detector

    Science.gov (United States)

    Miyoshi, T.; Ahmed, M. I.; Arai, Y.; Fujita, Y.; Ikemoto, Y.; Takeda, A.; Tauchi, K.

    2014-05-01

    We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

  20. The ATLAS pixel detector

    OpenAIRE

    Cristinziani, M.

    2007-01-01

    After a ten years planning and construction phase, the ATLAS pixel detector is nearing its completion and is scheduled to be integrated into the ATLAS detector to take data with the first LHC collisions in 2007. An overview of the construction is presented with particular emphasis on some of the major and most recent problems encountered and solved.

  1. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  2. High efficiency pixellated CdTe detector

    International Nuclear Information System (INIS)

    Position sensitive detectors constructed from compound semiconductors (CdTe, CdZnTe, HgI2) are being developed for a variety of applications where high sensitivity and improved energy resolution are significant advantages over scintillator or gas based systems. We have investigated the possibility of using a CdTe detector array in a SPECT gamma camera that would require a high efficiency at 140 keV. The problem of worsening photopeak efficiencies in thick detectors (due to incomplete charge collection) makes it difficult to maintain a high efficiency which, ironically, is the primary reason for choosing a thicker detector. Recent research has shown that following a simple geometrical design criterion can greatly reduce this deleterious effect. This paper reports on the results from a small prototype pixellated array fabricated using this design. We verify the 'small pixel effect' for a detector thickness and pixel size significantly larger than those used in most other work. A 9-element detector (1 x 1 mm pixels, 4 mm thick) has been fabricated and characterized in terms of energy resolution, peak-to-valley ratio and detection efficiency. Testing of the detector in a fast pulse mode to obtain its high count rate response has also been performed. (orig.)

  3. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  4. Pixel detector insertion

    CERN Multimedia

    CMS

    2015-01-01

    Insertion of the Pixel Tracker, the 66-million-channel device used to pinpoint the vertex of each colliding proton pair, located at the heart of the detector. The geometry of CMS is a cylinder lying on its side (22 meters long and 15 meters high in dia

  5. Gallium arsenide pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bates, R.; DaVia, C.; O`Shea, V.; Raine, C.; Smith, K. [Glasgow Univ. (United Kingdom). Dept. of Physics and Astronomy; Campbell, M.; Cantatore, E.; Heijne, E.M.; Middelkamp, P.; Ropotar, I.; Scharfetter, L.; Snoeys, W. [CERN, ECP Div., CH-1211 Geneva 23 (Switzerland); D`Auria, S.; Papa, C. del [Department of Physics, University of Udine and INFN Trieste, Via delle Scienze 208, I-33100 Udine (Italy); RD8 Collaboration

    1998-06-01

    GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV {pi}{sup -} beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e{sup -}. (orig.) 10 refs.

  6. PERFORMANCE-LIMITING DEFECTS IN CdZnTe DETECTORS

    International Nuclear Information System (INIS)

    We studied the effects of small, <20 (micro)m, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to hound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within the crystals

  7. Study of the spectrometric performances of monolithic CdTe CdZnTe gamma ray detectors

    OpenAIRE

    Gros D'Aillon, Eric

    2005-01-01

    Pixelated monolithic CdTe / CdZnTe semiconductor gamma ray detectors are brought to replace scintillation detectors for medical applications, notably for single photon emission computed tomography (SPECT). In addition to compactness, they present better spectrometric performances: energy resolution, detection efficiency, and spatial resolution. Moreover, the photons depth of interaction in the crystal can be measured. This work aimed in studying experimentally and by simulation the correlatio...

  8. ATLAS Pixel Detector Operational Experience

    CERN Document Server

    Di Girolamo, B; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.9% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  9. Charge-Sensitive Front-End Electronics with Operational Amplifiers for CdZnTe Detectors

    CERN Document Server

    Födisch, P; Lange, B; Kirschke, T; Enghardt, W; Kaever, P

    2016-01-01

    Cadmium zinc telluride (CdZnTe, "CZT") radiation detectors are announced to be a game-changing detector technology. However, state-of-the-art detector systems require high-performance readout electronics as well. Even though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, our demands on a high dynamic range for energy measurement and a high throughput are not served by any commercially available circuit. Consequently, we had to develop the analog front-end electronics with operational amplifiers for an 8x8 pixelated CZT detector. For this purpose, we model an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Therefore, we present the mathematical equations for a detailed network analysis. Additionally, we enhance the design with numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, noise level and verify the performance with synthetic detector signals. With this benchm...

  10. Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

    Science.gov (United States)

    Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

    2016-09-01

    Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

  11. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  12. Development of Portable Uranium Enrichment Measurement Apparatus With CdZnTe Detector

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    <正>A portable uranium enrichment measurement apparatus with CdZnTe detector manufactured by "eV Products" company was tested in this work. The apparatus consists of a co-planar grid detector based on

  13. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    International Nuclear Information System (INIS)

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests

  14. CdZnTe and CdTe detector arrays for hard X-ray and gamma-ray astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Stahle, C.M. E-mail: carl.stahle@gsfc.nasa.gov; Parker, B.H.; Parsons, A.M.; Barbier, L.M.; Barthelmy, S.D.; Gehrels, N.A.; Palmer, D.M.; Snodgrass, S.J.; Tueller, J

    1999-10-21

    A variety of CdZnTe and CdTe detector arrays were fabricated at NASA/GSFC for use in hard X-ray and gamma-ray astronomy. Mosaic, pixel, and 3-D position-sensitive detector arrays were built to demonstrate the capabilities for high-resolution imaging and spectroscopy for 10 to 2 MeV. This paper will summarize the different arrays and their applications for instruments being developed at NASA/GSFC. Specific topics to be addressed include materials characterization, fabrication of detectors, ASIC readout electronics, and imaging and spectroscopy tests.

  15. Performance updating of CdZnTe strip-drift detectors

    DEFF Research Database (Denmark)

    Shorohov, M.; Tsirkunova, I.; Loupilov, A.;

    2007-01-01

    59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10 x 10 x 6 mm 3 produced by Yinnel Tech company. Results...

  16. Performance simulation and structure design of Binode CdZnTe gamma-ray detector

    International Nuclear Information System (INIS)

    A new electrode structure CdZnTe (Cadmium Zinc Telluride) detector named Binode CdZnTe has been pro- posed in this paper. Together with the softwares of MAXWELL, GEANT4, and ROOT, the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized. In order to improve its performance further, Compton scattering effect correction has been used. The simulation results demonstrate that with refined design and Compton scattering effect correction, Binode CdZnTe detectors is capable of achieving 3.92% FWHM at 122 keV, and 1.27% FWHM at 662 keV. Com- pared with other single-polarity (electron-only) detector configurations, Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution. (authors)

  17. Preliminary Performance of CdZnTe Imaging Detector Prototypes

    Science.gov (United States)

    Ramsey, B.; Sharma, D. P.; Meisner, J.; Gostilo, V.; Ivanov, V.; Loupilov, A.; Sokolov, A.; Sipila, H.

    1999-01-01

    The promise of good energy and spatial resolution coupled with high efficiency and near-room-temperature operation has fuelled a large International effort to develop Cadmium-Zinc-Telluride (CdZnTe) for the hard-x-ray region. We present here preliminary results from our development of small-pixel imaging arrays fabricated on 5x5x1-mm and 5x5x2-mm spectroscopy and discriminator-grade material. Each array has 16 (4x4) 0.65-mm gold readout pads on a 0.75-mm pitch, with each pad connected to a discrete preamplifier via a pulse-welded gold wire. Each array is mounted on a 3-stage Peltier cooler and housed in an ion-pump-evacuated housing which also contains a hybrid micro-assembly for the 16 channels of electronics. We have investigated the energy resolution and approximate photopeak efficiency for each pixel at several energies and have used an ultra-fine beam x-ray generator to probe the performance at the pixel boundaries. Both arrays gave similar results, and at an optimum temperature of -20 C we achieved between 2 and 3% FWHM energy resolution at 60 keV and around 15% at 5.9 keV. We found that all the charge was contained within 1 pixel until very close to the pixels edge, where it would start to be shared with its neighbor. Even between pixels, all the charge would be appropriately shared with no apparently loss of efficiency or resolution. Full details of these measurements will be presented, together with their implications for future imaging-spectroscopy applications.

  18. The ALICE pixel detector

    CERN Document Server

    Mercado Perez, J

    2002-01-01

    The present document is a brief summary of the performed activities during the 2001 Summer Student Programme at CERN under the Scientific Summer at Foreign Laboratories Program organized by the Particles and Fields Division of the Mexican Physical Society (Sociedad Mexicana de Fisica). In this case, the activities were related with the ALICE Pixel Group of the EP-AIT Division, under the supervision of Jeroen van Hunen, research fellow in this group. First, I give an introduction and overview to the ALICE experiment; followed by a description of wafer probing. A brief summary of the test beam that we had from July 13th to July 25th is given as well. (3 refs).

  19. CMOS Pixel Spectroscopic Circuits for Cd(ZnTe Gamma Ray Imagers

    Directory of Open Access Journals (Sweden)

    Hatzistratis D.

    2016-01-01

    Full Text Available A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays. One element of the sensor array consists of a pixilated single crystal of CdTe or CdZnTe semiconductor bump bonded to the CMOS electronic circuit. The first member of the family can process single photon signals which deliver up to 4fCb charge, while the two other can process signals up to 36fCb. A unique readout mode and the simultaneous extraction of energy and time tagging information of the converted photons differentiate the members of this family from other existing CMOS readout circuits.

  20. Cooled CdZnTe detectors for X-ray astronomy

    CERN Document Server

    Bale, G; Seller, P; Lowe, B

    1999-01-01

    Recent results combining thermoelectrically cooled CdZnTe detectors with a low-noise Pentafet preamplifier are presented. Cooling between -30 deg. C and -40 deg. C reduces the leakage current of the detectors and allows the use of a pulsed reset preamplifier and long shaping times, significantly improving the energy resolution. Mn K subalpha X-rays at 5.9 keV have been observed with a resolution of less than 280 eV FWHM and a peak to background of more than 200:1. The Fano factor of the material has been estimated at 0.11+-0.012 at -40 deg. C. The detector requirement for X-ray astronomy will be a photon-counting imaging spectrometer. A 16x16 element, bump bonded pixel detector is described and results from a prototype silicon array presented. The detector is constructed with ASIC amplifiers with a system noise of <25 electrons rms and should give an energy resolution comparable to the Pentafet results presented here.

  1. Performance of CdZnTe detectors passivated with energetic oxygen atoms

    International Nuclear Information System (INIS)

    Noise caused by surface-leakage current can degrade the performance of CdZnTe spectrometers, particularly devices with closely spaced contacts such as coplanar grid detectors. In order to reduce surface leakage, the authors are treating CdZnTe detector surfaces with energetic, neutral oxygen atoms. Energetic oxygen atoms react with the surface to form a resistive oxide layer. Because the reaction is effective at room temperature, deleterious heating of the substrate is avoided. In most cases, leakage current and noise are shown to decrease significantly after treatment. The effect of the treatment on the performance of coplanar grid detectors is presented

  2. Operational experience of the ATLAS Pixel Detector

    CERN Document Server

    Marcisovsky, M; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  3. Operational experience of the ATLAS Pixel detector

    CERN Document Server

    Hirschbuehl, D; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  4. Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

    International Nuclear Information System (INIS)

    This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments. - Highlights: • We developed ruggedization methods to enhance reliability of CZT detector assemblies. • Attachment of CZT radiation detectors was improved through comparative studies. • Bare detector metallization

  5. Operational experience with the ATLAS Pixel Detector

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost element of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  6. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  7. CVD diamond pixel detectors for LHC experiments

    International Nuclear Information System (INIS)

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

  8. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  9. Operational Experience with the ATLAS Pixel Detector

    CERN Document Server

    Lantzsch, Kerstin; The ATLAS collaboration

    2016-01-01

    Run 2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). In addition the Pixel detector was refurbished with new service quarter panels to recover about 3% of defective modules lost during run 1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning, operation and performance of the 4-layer Pixel Detector will be presented.

  10. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  11. High performance p-i-n CdTe and CdZnTe detectors

    Science.gov (United States)

    Khusainov, A. Kh; Dudin, A. L.; Ilves, A. G.; Morozov, V. F.; Pustovoit, A. K.; Arlt, R. D.

    1999-06-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  12. Preliminary results obtained from novel CdZnTe pad detectors

    International Nuclear Information System (INIS)

    CdZnTe pad detectors with a novel geometry and approximately 1 mm2 pad sizes are being developed. These detectors have been specially designed for high energy resolution up to 300 keV energies. The contacts are produced through a unique technique developed by eV Products to achieve high reliability low resistance coupling to the substrate. A ceramic carrier is developed for low capacitance coupling of the detectors to NOVA's FEENA chip. The detectors have been tested using the ultra low noise single and 3-channel amplifiers developed by eV Products. The CdZnTe detectors are tested for dark current. The charge energy resolutions and collection times are also measured using natural radiation sources. The measured detector parameters and the test results are showing that linear pad arrays can have good uniformity and excellent application potential for imaging x-rays and gamma-rays

  13. TFA pixel sensor technology for vertex detectors

    OpenAIRE

    Jarron, P.; Moraes, D.; Despeisse, M.; Dissertori, G.; Dunand, S.; Kaplon. J.; Miazza, C.; Shah, Arvind; Viertel, G M.; Wyrsch, Nicolas

    2008-01-01

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS)...

  14. Development of SOI pixel detector in Cracow

    OpenAIRE

    Bugiel, Szymon; Dasgupta, Roma; Glab, Sebastian; Idzik, Marek; Moron, Jakub; Kapusta, Piotr Julian; Kucewicz, Wojciech; Turala, Michal

    2015-01-01

    This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for t...

  15. Nuclear reactor pulse calibration using a CdZnTe electro-optic radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, Kyle A., E-mail: knelson1@ksu.edu [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Geuther, Jeffrey A. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Neihart, James L.; Riedel, Todd A. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Rojeski, Ronald A. [Nanometrics, Inc., 1550 Buckeye Drive, Milpitas, CA 95035 (United States); Saddler, Jeffrey L. [TRIGA Mark II Nuclear Reactor, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States); Schmidt, Aaron J.; McGregor, Douglas S. [S.M.A.R.T. Laboratory, Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506 (United States)

    2012-07-15

    A CdZnTe electro-optic radiation detector was used to calibrate nuclear reactor pulses. The standard configuration of the Pockels cell has collimated light passing through an optically transparent CdZnTe crystal located between crossed polarizers. The transmitted light was focused onto an IR sensitive photodiode. Calibrations of reactor pulses were performed using the CdZnTe Pockels cell by measuring the change in the photodiode current, repeated 10 times for each set of reactor pulses, set between 1.00 and 2.50 dollars in 0.50 increments of reactivity. - Highlights: Black-Right-Pointing-Pointer We demonstrated the first use of an electro-optic device to trace reactor pulses in real-time. Black-Right-Pointing-Pointer We examined the changes in photodiode current for different reactivity insertions. Black-Right-Pointing-Pointer Created a linear best fit line from the data set to predict peak pulse powers.

  16. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Science.gov (United States)

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  17. Upgrades of the ATLAS Pixel Detector

    CERN Document Server

    Hügging, F; The ATLAS collaboration

    2013-01-01

    The upgrade for the ATLAS detector will undergo different phases towards HL-LHC. The first upgrade for the Pixel Detector (Phase 1) consists in the construction of a new pixel layer, which will be installed during the 1st long shutdown of the LHC machine (LS1) in 2013/14. The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of about 3.2 cm. The IBL requires the development of several new technologies to cope with the increase of radiation and pixel occupancy as well as to improve the physics performance of the existing pixel detector. The pixel size is reduced and the material budget is minimized by using new lightweight mechanical support materials and a CO2 based cooling system. For Phase 2 upgrade of LHC a complete new 4-layer pixel system is planned as part of a new all silicon Inner Detector. The increase in luminosity to about $5\\cdot 10^{34}$cm$^{-2}$s$^{-1}$ together with a total expected lifetime of ab...

  18. Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

    CERN Document Server

    Luke, P N; Lee Jae Sik; Yaver, H

    2000-01-01

    A three-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.

  19. Fabrication of virtual frisch-grid CdZnTe γ-ray detector

    Energy Technology Data Exchange (ETDEWEB)

    Park, Chan Sun; Choi, Jong Hak; Kim, Jung Min; Kim, Ki Hyun [Dept. of Radiologic Science, Korea University, Seoul (Korea, Republic of); Cho, Pyong Kon [Dept. of Radiological Science, Catholic University of Daegu, Daegu (Korea, Republic of)

    2014-12-15

    Large volume of 6 X 6 X 12 mm{sup 3} CdZnTe γ-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in {sup 137}Cs. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV γ-peak of {sup 137}Cs with virtual Frisch-grid CdZnTe detector.

  20. Development of SOI pixel detector in Cracow

    CERN Document Server

    Bugiel, Szymon; Glab, Sebastian; Idzik, Marek; Moron, Jakub; Kapusta, Piotr Julian; Kucewicz, Wojciech; Turala, Michal

    2015-01-01

    This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) is also presented. A 10-bit SAR ADC is developed for spectroscopic measurements and a lower resolution 6-bit SAR ADC is integrated in the pixel matrix as a column ADC, for tracking applications.

  1. Hybrid pixel detector development for medical radiography

    International Nuclear Information System (INIS)

    A 7-year project has been initiated to develop hybrid pixel detectors for medical radiography. Crystalline semiconductor will be bonded to a pixellated readout chip where individual integrated circuits process each event, transferring the position, energy and timing information to the data acquisition controller. Chips will be tiled to produce a large area detector, capable of energy dispersive photon counting at moderate spatial resolution. Preliminary results from studies examining the design features and operation of the device are presented

  2. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  3. Application of pulse-shape discrimination to coplanar CdZnTe detectors

    Science.gov (United States)

    Nakhostin, M.; Podolyak, Zs.; Sellin, P. J.

    2013-11-01

    A digital pulse-shape discrimination algorithm for the identification of multi-site γ-ray interactions in coplanar CdZnTe detectors has been developed. The algorithm is used to suppress the Compton continuum in γ-ray spectroscopy measurements by rejecting the single-site events. The results of our study with a 15×15×7.5 mm3 detector demonstrate the effectiveness of this approach for revealing low intensity γ-ray peaks in the examined energy range (511-1274 keV), which is of importance for environmental and security applications. The method is also very useful for background reduction in the neutrinoless double beta-decay experiments for which coplanar CdZnTe detectors are of interest.

  4. LISe pixel detector for neutron imaging

    Science.gov (United States)

    Herrera, Elan; Hamm, Daniel; Wiggins, Brenden; Milburn, Rob; Burger, Arnold; Bilheux, Hassina; Santodonato, Louis; Chvala, Ondrej; Stowe, Ashley; Lukosi, Eric

    2016-10-01

    Semiconducting lithium indium diselenide, 6LiInSe2 or LISe, has promising characteristics for neutron detection applications. The 95% isotopic enrichment of 6Li results in a highly efficient thermal neutron-sensitive material. In this study, we report on a proof-of-principle investigation of a semiconducting LISe pixel detector to demonstrate its potential as an efficient neutron imager. The LISe pixel detector had a 4×4 of pixels with a 550 μm pitch on a 5×5×0.56 mm3 LISe substrate. An experimentally verified spatial resolution of 300 μm was observed utilizing a super-sampling technique.

  5. Pixel Hit Reconstruction with the CMS Detector

    CERN Document Server

    Giurgiu, Gavril; Maksimovic, P; Swartz, M

    2008-01-01

    We present a new technique for pixel hit reconstruction with the CMS pixel detector. The technique is based on fitting the pixel cluster projections to templates obtained using a detailed simulation called Pixelav. Pixelav successfully describes the profiles of clusters measured in beam tests of radiation-damaged sensors. Originally developed to optimally estimate the coordinates of hits after the radiation damage, the technique has superior performance before irradiation as well, reducing the resolution tails of reconstructed track parameters and significantly reducing the light quark background of tagged b-quarks. It is the only technique currently available to simulate hits from a radiation-damaged detector.

  6. Pixel detectors from fundamentals to applications

    CERN Document Server

    Rossi, Leonardo; Rohe, Tilman; Wermes, Norbert

    2006-01-01

    Pixel detectors are a particularly important class of particle and radiation detection devices. They have an extremely broad spectrum of applications, ranging from high-energy physics to the photo cameras of everyday life. This book is a general purpose introduction into the fundamental principles of pixel detector technology and semiconductor-based hybrid pixel devices. Although these devices were developed for high-energy ionizing particles and radiation beyond visible light, they are finding new applications in many other areas. This book will therefore benefit all scientists and engineers working in any laboratory involved in developing or using particle detection.

  7. Application of CdTe (CdZnTe) detectors for radioactive waste characterization

    CERN Document Server

    Dovbnya, N A; Kutny, V E

    2002-01-01

    The radiation detectors based on wide-zone semiconductor CdTe (CdZnTe) monocrystals have promising advantages for their application in investigation (characterization) of radioactive waste. Among these advantages there are the wide range of photons flux and energy, high registration efficiency and satisfactory energy resolution without deep cooling of the detector. This report discusses the obtained data concerning radiation stability of detectors, influence of different conditions (filters, collimators, registration channel fill etc.) on their energy resolution in spectrometric regime, as well as a dependence of radionuclide identification accuracy on detector size.

  8. Preliminary test of an imaging probe for nuclear medicine using hybrid pixel detectors

    International Nuclear Information System (INIS)

    We are investigating the feasibility of an intraoperative imaging probe for lymphoscintigraphy with Tc-99m tracer, for sentinel node radioguided surgery, using the Medipix series of hybrid detectors coupled to a collimator. These detectors are pixelated semiconductor detectors bump-bonded to the Medipix1 photon counting read-out chip (64x64 pixel, 170 μm pitch) or to the Medipix2 chip (256x256 pixel, 55 μm pitch), developed by the European Medipix collaboration. The pixel detector we plan to use in the final version of the probe is a semi-insulating GaAs detector or a 1-2 mm thick CdZnTe detector. For the preliminary tests presented here, we used 300-μm thick silicon detectors, hybridized via bump-bonding to the Medipix1 chip. We used a tungsten parallel-hole collimator (7 mm thick, matrix array of 64x64 100 μm circular holes with 170 μm pitch), and a 22, 60 and 122 keV point-like (1 mm diameter) radioactive sources, placed at various distances from the detector. These tests were conducted in order to investigate the general feasibility of this imaging probe and its resolving power. Measurements show the high resolution but low efficiency performance of the detector-collimator set, which is able to image the 122 keV source with <1 mm FWHM resolution

  9. Fabrication and optimisation of room temperature CdZnTe radiation detectors

    CERN Document Server

    Hossain, M A

    2002-01-01

    The ternary compound Cadmium Zinc Telluride (CdZnTe) is one of the most promising room-temperature semiconductor detectors. It possesses the necessary material properties that are required to exhibit optimal detection performance. But unfortunately it does not display that expected level of performance because it has some shortcomings at various stages from crystal growth to contact fabrication. Investigations in each area have been pursued individually over the last decades and it is a goal in the field to integrate the optimal properties from each area into a fully optimised detector. In this work, the metal contacts to CdZnTe detectors have been investigated since these are believed to be one of the most vital areas among the possible detrimental aspects. In order to evaluate the contact features, different configurations of contact were fabricated on the supplied CdZnTe detector crystals using the available laboratory facilities. A great deal of effort was put into contact design and fabrication as well a...

  10. Physics performance of the ATLAS Pixel Detector

    CERN Document Server

    Tsuno, Soshi; The ATLAS collaboration

    2016-01-01

    One noticeable upgrade from Run-1 to Run-2 with ATLAS detector in proton-proton collisions at LHC is the introduction of the new pixel detector, IBL, located on the beam pipe as the extra innermost pixel layer. The tracking and vertex reconstruction are significantly improved and good performance is expected in high level object such a $b$-quark jet tagging, in turn, it leads the better physics results. This note summarizes what is the impact on the IBL detector to the physics results especially focusing on the analyses using the $b$-quark jets throughout 2016 summer physics program.

  11. Operational Experience with the CMS Pixel Detector

    CERN Document Server

    Karancsi, Janos

    2016-01-01

    The CMS pixel detector was repaired successfully, calibrated and commissioned for the second run of Large Hadron Collider during the first long shutdown between 2013 and 2015. The replaced pixel modules were calibrated separately and show the expected behavior of an un-irradiated detector. In 2015, the system performed very well with an even improved spatial resolution compared to 2012. During this time, the operational team faced various challenges including the loss of a sector in one half shell which was only partially recovered. In 2016, the detector is expected to withstand instantaneous luminosities beyond the design limits and will need a combined effort of both online and offline teams in order to provide the high quality data that is required to reach the physics goals of CMS. We present the operational experience gained during the second run of the LHC and show the latest performance results of the CMS pixel detector.

  12. Response Calculations of the CdZnTe Detector Using EGS4

    Energy Technology Data Exchange (ETDEWEB)

    Liu, James C

    2000-09-08

    The spectral response of a CdZnTe semiconductor detector has been calculated with the EGS4 Code System. The latest low-energy photon production and transport routines developed at KEK, which consider the K and L shell fluorescent photon production in compounds, bound Compton scattering, Doppler broadening, etc., were included in the EGS4 code. The calculations of the CdZnTe detector also took into account the collection efficiency of the produced electron-hole pairs (described by Hecht equation) and the modification on spectral peaks due to both the Fano factor and electronic-noise broadening. The calculated results are compared with measurements made with encapsulated {sup 241}Am and {sup 137}Cs disk sources. It was found that, by trying various mobility-lifetime values for holes, the calculated spectral response still did not have perfect agreement with measurements.

  13. Response calculations of the CdZnTe detector using EGS4

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J.C.; Nelson, W.R.; Seefred, R. [Stanford Linear Accelerator Center, Stanford, CA (United States)

    2000-12-01

    The spectral response of a CdZnTe semiconductor detector has been calculated with the EGS4 Code System. The latest low-energy photon production and transport routines developed at KEK, which consider the K and L shell fluorescent photon production in compounds, bound Compton scattering, Doppler broadening, etc., were included in the EGS4 code. The calculations of the CdZnTe detector also took into account the collection efficiency of the produced electron-hole pairs (described by Hecht equation) and the modification on spectral peaks due to both the Fano factor and electronic-noise broadening. The calculated results are compared with measurements made with encapsulated {sup 241}Am and {sup 137}Cs disk sources. It was found that, by trying various mobility-lifetime values for holes, the calculated spectral response still did not have perfect agreement with measurements. (author)

  14. Characterization of a large CdZnTe coplanar quad-grid semiconductor detector

    CERN Document Server

    Ebert, Joachim; Gehre, Daniel; Hagner, Caren; Heidrich, Nadine; Klingenberg, Rainer; Kröninger, Kevin; Nitsch, Christian; Oldorf, Christian; Quante, Thomas; Rajek, Silke; Rebber, Henning; Rohatsch, Katja; Tebrügge, Jan; Temminghoff, Robert; Theinert, Robert; Timm, Jan; Wonsak, Björn; Zatschler, Stefan; Zuber, Kai

    2015-01-01

    The COBRA collaboration aims to search for neutrinoless double beta-decay of $^{116}$Cd. A demonstrator setup with 64 CdZnTe semiconductor detectors, each with a volume of 1cm$^3$, is currently being operated at the LNGS underground laboratory in Italy. This paper reports on the characterization of a large (2 $\\times$ 2 $\\times$ 1.5)cm$^3$ CdZnTe detector with a new coplanar-grid design for applications in $\\gamma$-ray spectroscopy and low-background operation. Several studies of electric properties as well as of the spectrometric performance, like energy response and resolution, are conducted. Furthermore, measurements including investigating the operational stability and a possibility to identify multiple-scattered photons are presented.

  15. Preliminary test of an imaging probe for nuclear medicine using hybrid pixel detectors

    CERN Document Server

    Bertolucci, Ennio; Mettivier, G; Montesi, M C; Russo, P

    2002-01-01

    We are investigating the feasibility of an intraoperative imaging probe for lymphoscintigraphy with Tc-99m tracer, for sentinel node radioguided surgery, using the Medipix series of hybrid detectors coupled to a collimator. These detectors are pixelated semiconductor detectors bump-bonded to the Medipix1 photon counting read-out chip (64x64 pixel, 170 mu m pitch) or to the Medipix2 chip (256x256 pixel, 55 mu m pitch), developed by the European Medipix collaboration. The pixel detector we plan to use in the final version of the probe is a semi-insulating GaAs detector or a 1-2 mm thick CdZnTe detector. For the preliminary tests presented here, we used 300-mu m thick silicon detectors, hybridized via bump-bonding to the Medipix1 chip. We used a tungsten parallel-hole collimator (7 mm thick, matrix array of 64x64 100 mu m circular holes with 170 mu m pitch), and a 22, 60 and 122 keV point-like (1 mm diameter) radioactive sources, placed at various distances from the detector. These tests were conducted in order ...

  16. ATLAS Inner Detector (Pixel Detector and Silicon Tracker)

    CERN Multimedia

    ATLAS Outreach

    2006-01-01

    To raise awareness of the basic functions of the Pixel Detector and Silicon Tracker in the ATLAS detector on the LHC at CERN. This colorful 3D animation is an excerpt from the film "ATLAS-Episode II, The Particles Strike Back." Shot with a bug's eye view of the inside of the detector. The viewer is taken on a tour of the inner workings of the detector, seeing critical pieces of the detector and hearing short explanations of how each works.

  17. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  18. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    Energy Technology Data Exchange (ETDEWEB)

    Zumbiehl, A. E-mail: zumbiehl@phase.c-strasbourg.fr; Hage-Ali, M.; Fougeres, P.; Koebel, J.M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P

    2001-08-11

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a 'pseudo-Monte Carlo' simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios (W/L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  19. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    Science.gov (United States)

    Zumbiehl, A.; Hage-Ali, M.; Fougeres, P.; Koebel, J. M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P.

    2001-08-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a "pseudo-Monte Carlo" simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios ( W/ L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  20. Commissioning the CMS pixel detector with Cosmic Rays

    CERN Document Server

    Heyburn, Bernadette

    2009-01-01

    commissioning activities in the CMS pixel detector. Results from cosmic ray studies will be presented, in addition to results obtained from the integration of the pixel detector within the CMS detector and various calibration and alignment analyses.

  1. Proceedings of PIXEL98 -- International pixel detector workshop

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, D.F.; Kwan, S. [eds.

    1998-08-01

    Experiments around the globe face new challenges of more precision in the face of higher interaction rates, greater track densities, and higher radiation doses, as they look for rarer and rarer processes, leading many to incorporate pixelated solid-state detectors into their plans. The highest-readout rate devices require new technologies for implementation. This workshop reviewed recent, significant progress in meeting these technical challenges. Participants presented many new results; many of them from the weeks--even days--just before the workshop. Brand new at this workshop were results on cryogenic operation of radiation-damaged silicon detectors (dubbed the Lazarus effect). Other new work included a diamond sensor with 280-micron collection distance; new results on breakdown in p-type silicon detectors; testing of the latest versions of read-out chip and interconnection designs; and the radiation hardness of deep-submicron processes.

  2. Development of a CMOS SOI pixel detector

    CERN Document Server

    Ishino, Hirokazu; Hazumi, M; Ikegami, Y; Kohriki, T; Tajima, O; Terada, S; Tsuboyama, T; Unno, Y; Ushiroda, Y; Ikeda, H; Hara, K; Ishino, H; Kawasaki, T; Miyake, H; Martin, E; Varner, G; Tajima, H; Ohno, M; Fukuda, K; Komatsubara, H; Ida, J

    2007-01-01

    We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 m fullydepleted- SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5mm2 consisting of 20 x 20 um2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a . ray radioactive source indicate successful operation of the detector. We also brie y discuss the back gate effect as well as the simulation study.

  3. Commissioning of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  4. High-Efficiency CdZnTe Position-Sensitive VFG Gamma-Ray Detectors for Safeguards Applications

    Energy Technology Data Exchange (ETDEWEB)

    Bolotnikov, Aleksey E. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, Ralph B. [Brookhaven National Lab. (BNL), Upton, NY (United States); Cui, Y. [Brookhaven National Lab. (BNL), Upton, NY (United States); De Geronimo, G. [Brookhaven National Lab. (BNL), Upton, NY (United States); Vernon, E. [Brookhaven National Lab. (BNL), Upton, NY (United States); Camarda, G. S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Hossain, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yang, G. [Brookhaven National Lab. (BNL), Upton, NY (United States); Indusi, J. [Brookhaven National Lab. (BNL), Upton, NY (United States); Boyer, Brian [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-09-30

    The goal of this project is to incorporate a Cadmium-Zinc-Telluride (CdZnTe or CZT) detector (with 1% or better resolution) into a bench-top prototype for isotope identification and related safeguards applications. The bench-top system is based on a 2x2 array of 6x6x20 mm3 position-sensitive virtual Frisch-grid (VFG) CZT detectors. The key features of the array are that it allows for the use of average-grade CZT material with a moderate content of defects, and yet it provides high-energy resolution, 1% FWHM at 662 keV, large effective area, and low-power consumption. The development of this type of 3D detector and new instruments incorporating them is motivated by the high cost and low availability of large, > 1 cm3, CZT crystals suitable for making multi-pixel detectors with acceptable energy resolution and efficiency.

  5. Research of CdZnTe detector based portable energy dispersive spectrometer

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A kind of excellent CdZnTe crystal has been grown in Yinnel Tech, Inc. in recent years. Based on these CdZnTe crystals and some new techniques, a portable energy-dispersive spectrometer has been constructed which has yielded good results. CdZnTe detector has a 3% relative resolution in high-energy field and can detect gamma rays at room temperature. An integrated circuit based on preamplifier and shaping amplifier chips is connected to the detector.Voltage pulses are transformed into digital signals in MCA (multichannel analyzer) and are then transmitted to computer via USB bus. Data process algorithms are improved in this spectrometer. Fast Fourier transform (FFT) and numerical differentiation (ND) are used in energy peak's searching program. Sampling-based correction technique is used in X-ray energy calibration. Modified Gaussian-Newton algorithm is a classical method to solve nonlinear curve fitting problems, and it is used to compute absolute intensity of each detected characteristic line.

  6. A test device for isotopic γ-ray imaging with CdZnTe detector

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A test device for isotopic γ-ray imaging, which consists of an isotope γ-ray source, a CdZnTe γ-ray spectrometer and other auxiliary equipment, is studied here. Compared with the conventional X-ray, the isotope γ-ray,which is utilized in this project, has its own advantages in imaging. Furthermore, with a room-temperature high-energy-resolution CdZnTe detector and a modern imaging processing technique, this device is capable of effectively suppressing the background and gaining more information, thus it can obtain a better image than conventional X-ray devices. In the experiment of PCB imaging, all soldered points and chip components are sharply demonstrated.

  7. A DC-coupling area-efficiency readout circuit for CdZnTe detectors

    International Nuclear Information System (INIS)

    In this paper, a DC-coupling readout circuit is presented in order to readout the signal from CdZnTe detectors. A differential stage is added in CSA to compensate the leakage current introduced by the CdZnTe crystal. A compact shaper is designed to achieve low area with wide range of adjustable peaking time from 3 μ s to 10 μ s. The area of proposed circuit is about 130 μ m × 1100 μ m. The experimental results show that the ENC is 70 e− + 14 e−/pF and the gain is about 152 mV/fC at the peaking time of 4 μ s

  8. The ALICE silicon pixel detector readout electronics

    CERN Document Server

    Krivda, M; Burns, M; Caselle, M; Kluge, A; Manzari, V; Torcato de Matos, C; Morel, M; Riedler, P; Aglieri Rinella, G; Sandor, L; Stefanini, G

    2010-01-01

    The ALICE silicon pixel detector (SPD) constitutes the two innermost layers of the ALICE inner tracking system (ALICE Collaboration, 1999) [1]. The SPD is built with 120 detector modules (half-staves) and contains about 10 million pixels in total. The half-staves are connected to the off-detector electronics, housed in a control room 100 m away, via bidirectional optical links. The stream of data from the front-end electronics is processed in 20 VME readout modules, called routers, based on FPGAs. Three 2-channel link-receiver daughter cards, also based on FPGAs, are plugged in each router. Each link-receiver card receives data via the optical link from two half-staves, applies the zero suppression and passes them to the router to be processed and sent to the ALICE–DAQ system through the detector data link (DDL). The SPD control, configuration and data monitoring are performed using the VME interface embedded in the router.

  9. Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

  10. Noise reduction in CdZnTe coplanar-grid detectors

    Energy Technology Data Exchange (ETDEWEB)

    Luke, Paul N.; Lee, Julie S.; Amman, Mark; Yu, Kin M.

    2001-11-15

    Noise measurements on CdZnTe detectors show that the main sources of detector-related noise are shot noise due to bulk leakage current and 1/f noise due to the detector surfaces. The magnitude of surface leakage current appears to have little or no effect on the detector noise. Measurements on guard-ring devices fabricated using gold-evaporated contacts show that the contacts behave as Schottky barriers, and the bulk current at typical operating voltages is likely dependent on the contact properties rather than directly on the material's bulk resistivity. This also suggests that the level of shot noise is affected by the detector contacts and not necessarily by the material's bulk resistivity. A significant reduction in the noise of coplanar-grid detectors has been obtained using a modified contact fabrication process.

  11. Commissioning of the ATLAS Pixel Detector

    OpenAIRE

    Golling, Tobias; ATLAS Collaboration

    2008-01-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and su...

  12. Optical Link of the Atlas Pixel Detector

    OpenAIRE

    Gan, K. K.

    2007-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the irradiation studies with 24 GeV protons up to 32 Mrad (1.2 x 10^15 p/cm^2) and the experience from the production.

  13. Electrical characteristics of silicon pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gorelov, I.; Gorfine, G.; Hoeferkamp, M.; Mata-Bruni, V.; Santistevan, G.; Seidel, S.C. E-mail: seidel@dot.phys.unm.edu; Ciocio, A.; Einsweiler, K.; Emes, J.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Marchesini, R.; McCormack, F.; Milgrome, O.; Palaio, N.; Pengg, F.; Richardson, J.; Zizka, G.; Ackers, M.; Comes, G.; Fischer, P.; Keil, M.; Martinez, G.; Peric, I.; Runolfsson, O.; Stockmanns, T.; Treis, J.; Wermes, N.; Goessling, C.; Huegging, F.; Klaiber-Lodewigs, J.; Krasel, O.; Wuestenfeld, J.; Wunstorf, R.; Barberis, D.; Beccherle, R.; Caso, C.; Cervetto, M.; Darbo, G.; Gagliardi, G.; Gemme, C.; Morettini, P.; Netchaeva, P.; Osculati, B.; Rossi, L.; Charles, E.; Fasching, D.; Blanquart, L.; Breugnon, P.; Calvet, D.; Clemens, J.-C.; Delpierre, P.; Hallewell, G.; Laugier, D.; Mouthuy, T.; Rozanov, A.; Valin, I.; Andreazza, A.; Caccia, M.; Citterio, M.; Lari, T.; Meroni, C.; Ragusa, F.; Troncon, C.; Vegni, G.; Lutz, G.; Richter, R.H.; Rohe, T.; Boyd, G.R.; Skubic, P.L.; Sicho, P.; Tomasek, L.; Vrba, V.; Holder, M.; Ziolkowski, M.; Cauz, D.; Cobal-Grassmann, M.; D' Auria, S.; De Lotto, B.; Del Papa, C.; Grassmann, H.; Santi, L.; Becks, K.H.; Lenzen, G.; Linder, C

    2002-08-21

    Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

  14. Recent Progress in CdTe and CdZnTe Detectors

    OpenAIRE

    Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises du...

  15. Charge sharing in silicon pixel detectors

    CERN Document Server

    Mathieson, K; Seller, P; Prydderch, M L; O'Shea, V; Bates, R L; Smith, K M; Rahman, M

    2002-01-01

    We used a pixellated hybrid silicon X-ray detector to study the effect of the sharing of generated charge between neighbouring pixels over a range of incident X-ray energies, 13-36 keV. The system is a room temperature, energy resolving detector with a Gaussian FWHM of 265 eV at 5.9 keV. Each pixel is 300 mu m square, 300 mu m deep and is bump bonded to matching read out electronics. The modelling packages MEDICI and MCNP were used to model the complete X-ray interaction and the subsequent charge transport. Using this software a model is developed which reproduces well the experimental results. The simulations are then altered to explore smaller pixel sizes and different X-ray energies. Charge sharing was observed experimentally to be 2% at 13 keV rising to 4.5% at 36 keV, for an energy threshold of 4 keV. The models predict that up to 50% of charge may be lost to the neighbouring pixels, for an X-ray energy of 36 keV, when the pixel size is reduced to 55 mu m.

  16. TFA pixel sensor technology for vertex detectors

    International Nuclear Information System (INIS)

    Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5x1015 p/cm2

  17. Evaluation of CdZnTe detector for personal surveymeter applications

    International Nuclear Information System (INIS)

    In this paper, we report the fabrication and characterization of the personal surveymeter using home made Cd0.8Zn0.2Te detector for the field application. The detector structure is the bulk type and Au electrode is formed by electroless deposition method. The properties of Au film were analyzed by the AFM, RBS and Auger spectroscopy. The reliability test results showed that TO-5 packaged CdZnTe detector had good stability. When the detector bias voltage was higher, the detector response was more stable at the low temperature. The personal surveymeter also showed good linear response about gamma dose rate from 1 mRad/hr to 500 Rad/hr

  18. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS

    International Nuclear Information System (INIS)

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance

  19. Simulated and associated experimental results of CdZnTe radiation detector response for gamma-ray imaging applications

    International Nuclear Information System (INIS)

    Simulated and associated experimental results of a high efficiency CdZnTe (CZT) radiation detector response for gamma-ray imaging applications are presented. The model of a high efficiency semiconductor gamma ray detector takes into account several different physical phenomena involved in the detection and correction processes, namely the geometry of the irradiation, the gamma-ray's interaction with the crystal, the physics of the semiconductor's charge collection, the electric field distribution and the pulse height correction method. A few important decoupling assumptions allow the authors to use a one dimensional charge collection simulation with a two-dimensional field model and a full three dimensional Monte-Carlo calculation of the gamma ray interactions. The model allows calculation of charge collection and gamma ray spectra for non uniform electric field distribution in either planar, striped or pixellated detector. The model takes also into account the new CZT fast pulse correction method and its associated noise by considering the pulse height and the rise time of electron signals (Bi-Parametric spectrum) for all gamma ray interactions. Specific simulated and experimental spectra at 122 keV are presented for CZT. First, basic spectral changes are calculated for variations in crystal and detector properties like mobility, trapping lifetime and electric field profiles. Second, new experimental results of the fast pulse correction method applied to different CZT detector grades are presented. This method allows to achieve a high detection efficiency (> 80%) with a good energy resolution (3 CZT detector. No specific contact geometry is needed and the unusual low applied bias voltage allows to limit the aging and break voltage effects and also the dark current and its associated noise. This fast correction method is expected to be useful for medical imaging and other applications. Finally, simulated Bi-Parametric (BP) spectra expected with the fast pulse

  20. A CdZnTe slot-scanned detector for digital mammography

    International Nuclear Information System (INIS)

    A new high-resolution detector has been developed for use in a slot-scanned digital mammography system. The detector is a hybrid device that consists of a CCD operating in time-delay integration mode that is bonded to a 150-μm-thick CdZnTe photoconductor array. The CCD was designed with a detector element pitch of 50 μm. Two devices were evaluated with differing crystalline quality. Incomplete charge collection was a source of reduction in DQE. This occurs in both devices due to characteristically low mobility-lifetime products for CdZnTe, with the greatest losses demonstrated by the multicrystalline sample. The mobility-lifetime products for the multicrystalline device were found to be 2.4x10-4 and 4.0x10-7 cm2/V for electrons and holes, respectively. The device constructed with higher quality single crystal CdZnTe demonstrated mobility-lifetime products of 1.0x10-4 and 4.4x10-6 cm2/V for electrons and holes. The MTF and DQE for the device were measured at several exposures and results were compared to predictions from a linear systems model of signal and noise propagation. The MTF at a spatial frequency of 10 mm-1 exceeded 0.18 and 0.56 along the scan and slot directions, respectively. Scanning motion and CCD design limited the resolution along the scan direction. For an x-ray beam from a tungsten target tube with 40 μm molybdenum filtration operated at 26 kV, the single crystal device demonstrated a DQE(0) of 0.70±0.02 at 7.1x10-6 C/kg (27 mR) exposure to the detector, despite its relatively poor charge collection efficiency

  1. SOIKID, SOI pixel detector combined with superconducting detector KID

    CERN Document Server

    Ishino, Hirokazu; Kida, Yosuke; Yamada, Yousuke

    2015-01-01

    We present the development status of the SOIKID, a detector combining the SOI pixel detector and the superconducting detector KID (Kinetic Inductance Detector). The aim of the SOIKID is to measure X-ray photon energy with the resolution better than that of the semiconductor detector. The silicon substrate is used as the X-ray photon absorber. The recoiled electron creates athermal phonons as well as the ionizing electron-hole pairs. The KID formed at one side of the substrate surface detects the phonons to measure the total energy deposited, while the SOI pixel detector formed on the other side of the substrate detects the ionized carries to measure the position. Combining the position and energy measurements, it is in principle possible to have the extremely high energy resolution.

  2. IDeF-X V1.0: A new 16-channel low-noise analog front-end for Cd(Zn)Te detectors

    International Nuclear Information System (INIS)

    Joint progress in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20 deg. C, these instruments will offer high spatial resolution (pixel size ranging from 300x300 μm2 to few mm2), high spectral response and high detection efficiency. To reach these goals, reliable, highly integrated, low noise and low power consumption electronics is mandatory. Our group is currently developing a new full-custom detector front-end ASIC named IDeF-X, for modular spectro-imaging system based on the use of Cd(Zn)Te detectors. We present the most recent version of IDeF-X which is a 16 channels analog readout chip for hard X-ray spectroscopy. It has been processed with the standard AMS 0.35 μm CMOS technology. Each channel consists of a charge sensitive preamplifier, a pole zero cancellation stage, a variable peaking time filter and an output buffer. IDeF-X is designed to be DC coupled to detectors having a low dark current at room temperature and is optimized for input capacitance ranging from 2 to 5pF

  3. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    CERN Document Server

    Zumbiehl, A; Fougeres, P; Koebel, J M; Regal, R; Rit, C; Ayoub, M; Siffert, P

    2001-01-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: af...

  4. Development of gamma ray monitor using CdZnTe semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Rasolonjatovo, A.H.D.; Shiomi, T.; Nakamura, T. [Tohoku Univ., Department of Quantum Science and Energy Engineering, Sendai, Miyagi (Japan); Nishizawa, H.; Tsudaka, Y.; Fujiwara, H.; Araki, H.; Matsuo, K. [Mitsubishi Electric Corp., Amagasaki, Hyogo (Japan)

    2000-12-01

    In this study, we aimed to develop a new X-ray and gamma ray monitor using the CdZnTe semiconductor detector, which have high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of 10x10 mm{sup 2} by 2 mm thick CdZnTe detector were measured in the energy range of 10 keV to 1.8 MeV by using monoenergetic X-ray and gamma ray sources. The measured results showed very good agreement with the results calculated using the EGS4 Monte Carlo code taking into account the charge collection efficiency in the detector. By using two CZT detectors of 10x10x2 mm{sup 3} and 3x3x2 mm{sup 3} coupled with a filter, the weighted sum of a few energy channels with different cut-off energies was finally found out to realize a flat energy response to equivalent dose (counts per mSv) within {+-}30% or {+-}10% deviation. (author)

  5. Recent Progress in CdTe and CdZnTe Detectors

    CERN Document Server

    Takahashi, T; Takahashi, Tadayui; Watanabe, Shin

    2001-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in future hard X-ray and Gamma-ray astronomy missions are briefly discus...

  6. Characterization of the CMS Pixel Detectors

    CERN Document Server

    Gu, Weihua

    2002-01-01

    In 2005 the Large Hadron Collider (LHC) will start the pp collisions at a high luminosity and at a center of mass energy of 14 TeV. The primary goal of the experimental programme is the search of the Higgs boson(s) and the supersymmetric particles. The programme is also proposed to detect a range of diverse signatures in order to provide guidance for future physics. The pixel detector system makes up the innermost part of the CMS experiment, which is one of the two general purpose detectors at the LHC. The main tasks of the system are vertex detection and flavor tagging. The high luminosity and the high particle multiplicity as well as the small bunch spacing at the LHC impose great challenges on the pixel detectors: radiation hardness of sensors and electronics, fast signal processing and a high granularity are the essential requirements. This thesis concentrates on the study of the suitability of two test stands, which are implemented to characterize the CMS pixel detectors: one is con-cerned with test puls...

  7. Readout architecture of the CMS pixel detector

    CERN Document Server

    Baur, R

    2001-01-01

    In this paper we describe the readout architecture of the CMS pixel chip. In column drain architecture the complex tasks of data buffering and trigger verification are performed in the circuit periphery. This allows to use a rather simple pixel unit cell which requires only a small number of transistors. The column periphery logic is designed for readout and trigger rates expected for full LHC luminosity. At LHC the high particle flux can create single event upsets in the readout chips. At small radii the upsets of logic cells could severely affect the performance of the pixel detector readout. We have therefore performed a measurement of the upset rate at the PSI pion beam and describe the consequences for the design of the readout chip. (5 refs).

  8. Radiation Experience with the CMS Pixel Detector

    CERN Document Server

    Veszpremi, Viktor

    2015-01-01

    The CMS pixel detector is the innermost component of the CMS tracker occupying the region around the centre of CMS, where the LHC beams are crossed, between 4.3~cm and 30~cm in radius and 46.5~cm along the beam axis. It operates in a high-occupancy and high-radiation environment created by particle collisions. Studies of radiation damage effects to the sensors were performed throughout the first running period of the LHC. Leakage current, depletion voltage, pixel read-out thresholds, and hit finding efficiencies were monitored as functions of the increasing particle fluence. The methods and results of these measurements will be described together with their implications to detector operation as well as to performance parameters in offline hit reconstruction.

  9. Radiation experience with the CMS pixel detector

    Science.gov (United States)

    Veszpremi, V.

    2015-04-01

    The CMS pixel detector is the innermost component of the CMS tracker occupying the region around the centre of CMS, where the LHC beams are crossed, between 4.3 cm and 30 cm in radius and 46.5 cm along the beam axis. It operates in a high-occupancy and high-radiation environment created by particle collisions. Studies of radiation damage effects to the sensors were performed throughout the first running period of the LHC . Leakage current, depletion voltage, pixel readout thresholds, and hit finding efficiencies were monitored as functions of the increasing particle fluence. The methods and results of these measurements will be described together with their implications to detector operation as well as to performance parameters in offline hit reconstruction.

  10. Monolithic pixel detectors for high energy physics

    CERN Document Server

    Snoeys, W

    2013-01-01

    Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio ( Q / C ). It is shown that monolithic detectors can achieve Q / C for low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining suf fi cient Q / C , collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.

  11. Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

    Science.gov (United States)

    Rejhon, M.; Franc, J.; Dědič, V.; Kunc, J.; Grill, R.

    2016-09-01

    In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels {{E}\\text{v}}+0.41 eV, {{E}\\text{v}}+0.77 eV and {{E}\\text{v}}+0.94 eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.

  12. Barrier controlled carrier trapping of extended defects in CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Rongrong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Jie, Wanqi, E-mail: jwq@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Xu, Yadong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

    2015-09-11

    Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established.

  13. Characterization of the CMS pixel detectors

    OpenAIRE

    Gu, Weihua

    2002-01-01

    In 2005 the Large Hadron Collider (LHC) will start the pp collisions at a high luminosity and at a center of mass energy of 14 TeV. The primary goal of the experimental programme is the search of the Higgs boson(s) and the supersymmetric particles. The programme is also proposed to detect a range of diverse signatures in order to provide guidance for future physics. The pixel detector system makes up the innermost part of the CMS experiment, which is one of the two general purpose detectors a...

  14. The Belle II DEPFET pixel detector

    Science.gov (United States)

    Moser, Hans-Günther

    2016-09-01

    The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

  15. optical links for the atlas pixel detector

    CERN Document Server

    Stucci, Stefania Antonia; The ATLAS collaboration

    2015-01-01

    Optical links are necessary to satisfy the high speed readout over long distances for advanced silicon detector systems. We report on the optical readout used in the newly installed central pixel layer (IBL) in the ATLAS experiment. The off detector readout employs commercial optical to analog converters, which were extensively tested for this application. Performance measurements during installation and commissioning will be shown. With the increasing instantaneous luminosity in the next years, the next layers outwards of IBL of the ATLAS Pixel detector (Layer 1 and Layer 2) will reach their bandwidth limits. A plan to increase the bandwidth by upgrading the off detector readout chain is put in place. The plan also involves new optical readout components, in particular the optical receivers, for which commercial units cannot be used and a new design has been made. The latter allows for a wider operational range in term of data frequency and light input power to match the on-detector sending units on the pres...

  16. Optical links for the ATLAS Pixel detector

    CERN Document Server

    Stucci, Stefania Antonia; The ATLAS collaboration

    2015-01-01

    Optical links are necessary to satisfy the high speed readout over long distances for advanced silicon detector systems. We report on the optical readout used in the newly installed central pixel layer (IBL) in the ATLAS experiment. The off detector readout employs commercial optical to analog converters, which were extensively tested for this application. Performance measurements during installation and commissioning will be shown. With the increasing instantaneous luminosity in the next years, the next layers outwards of IBL of the ATLAS Pixel detector (Layer 1 and Layer 2) will reach their bandwidth limits. A plan to increase the bandwidth by upgrading the off detector readout chain is put in place. The plan also involves new optical readout components, in particular the optical receivers, for which commercial units cannot be used and a new design has been made. The latter allows for a wider operational range in term of data frequency and light input power to match the on-detector sending units on the pres...

  17. Analysis of Surface Chemistry and Detector Performance of Chemically Process CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    HOSSAIN, A.; Yang, G.; Sutton, J.; Zergaw, T.; Babalola, O. S.; Bolotnikov, A. E.; Camarda. ZG. S.; Gul, R.; Roy, U. N., and James, R. B.

    2015-10-05

    The goal is to produce non-conductive smooth surfaces for fabricating low-noise and high-efficiency CdZnTe devices for gamma spectroscopy. Sample preparation and results are discussed. The researachers demonstrated various bulk defects (e.g., dislocations and sub-grain boundaries) and surface defects, and examined their effects on the performance of detectors. A comparison study was made between two chemical etchants to produce non-conductive smooth surfaces. A mixture of bromine and hydrogen peroxide proved more effective than conventional bromine etchant. Both energy resolution and detection efficiency of CZT planar detectors were noticeably increased after processing the detector crystals using improved chemical etchant and processing methods.

  18. Preliminary Results from Small-Pixel CdZnTe and CdTe Arrays

    Science.gov (United States)

    Ramsey, B. D.; Sharma, D. P.; Meisner, J.; Austin, R. A.

    1999-01-01

    We have evaluated 2 small-pixel (0.75 mm) Cadmium-Zinc-Telluride arrays, and one Cadmium-Telluride array, all fabricated for MSFC by Metorex (Finland) and Baltic Science Institute (Riga, Latvia). Each array was optimized for operating temperature and collection bias. It was then exposed to Cadmium-109 and Iron-55 laboratory isotopes, to measure the energy resolution for each pixel and was then scanned with a finely-collimated x-ray beam, of width 50 micron, to examine pixel to pixel and inter-pixel charge collections efficiency. Preliminary results from these array tests will be presented.

  19. Nuclear reactor pulse tracing using a CdZnTe electro-optic radiation detector

    Science.gov (United States)

    Nelson, Kyle A.; Geuther, Jeffrey A.; Neihart, James L.; Riedel, Todd A.; Rojeski, Ronald A.; Ugorowski, Philip B.; McGregor, Douglas S.

    2012-07-01

    CdZnTe has previously been shown to operate as an electro-optic radiation detector by utilizing the Pockels effect to measure steady-state nuclear reactor power levels. In the present work, the detector response to reactor power excursion experiments was investigated. Peak power levels during an excursion were predicted to be between 965 MW and 1009 MW using the Fuchs-Nordheim and Fuchs-Hansen models and confirmed with experimental data from the Kansas State University TRIGA Mark II nuclear reactor. The experimental arrangement of the Pockels cell detector includes collimated laser light passing through a transparent birefringent crystal, located between crossed polarizers, and focused upon a photodiode. The birefringent crystal, CdZnTe in this case, is placed in a neutron beam emanating from a nuclear reactor beam port. After obtaining the voltage-dependent Pockels characteristic response curve with a photodiode, neutron measurements were conducted from reactor pulses with the Pockels cell set at the 1/4 and 3/4 wave bias voltages. The detector responses to nuclear reactor pulses were recorded in real-time using data logging electronics, each showing a sharp increase in photodiode current for the 1/4 wave bias, and a sharp decrease in photodiode current for the 3/4 wave bias. The polarizers were readjusted to equal angles in which the maximum light transmission occurred at 0 V bias, thereby, inverting the detector response to reactor pulses. A high sample rate oscilloscope was also used to more accurately measure the FWHM of the pulse from the electro-optic detector, 64 ms, and is compared to the experimentally obtained FWHM of 16.0 ms obtained with the 10B-lined counter.

  20. Preliminary results from a novel CdZnTe linear pad detector array x-ray imaging system

    International Nuclear Information System (INIS)

    The excellent energy-resolution and short charge collection time, especially the possibility of room temperature operation, make CdZnTe semiconductor detectors an excellent candidate for x-ray imaging and spectroscopic application in nuclear physics. Because of these characteristics, CdZnTe pad detectors with a novel geometry and approximately 1 mm2 pad area have been developed. These pad type linear arrays are new and important for many scanning type applications using a wide energy range from about 10 to 300 keV energies. A prototype x-ray imaging system has been developed consisting of a state-of-the-art pad type linear array of CdZnTe detectors manufactured by eV Products and low noise readout electronics developed by NOVA R and D, Inc. A series of measurements on the temperature dependence of the performance of CdZnTe linear pad detector arrays has been performed at NOVA R and D, Inc. The changes in dark (leakage) current against temperature have been studied. High resolution x-ray spectra has been obtained using 57Co source at different temperatures. A low noise front-end electronics ASIC chip for reading out the detector array was developed that can achieve fast data acquisition with dual energy imaging capability. Several prototype CdZnTe pad detector arrays are placed next to each other to form an approximately 30 cm long linear array. This array is used to make preliminary dual energy scanned images of complex objects using a 90 kV x-ray generator. Some of the images will be presented. The results show that the system is excellent for applications in industrial and medical imaging

  1. The Phase1 CMS Pixel detector upgrade

    CERN Document Server

    Tavolaro, Vittorio Raoul

    2016-01-01

    The pixel detector of the CMS experiment will be replaced in an extended end-of-year shutdown during winter 2016/2017 with an upgraded one able to cope with peak instantaneous luminosities beyond the nominal LHC instantaneous luminosity of $1 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$. Under the conditions expected in the coming years, which will see an increase of a factor two in instantaneous luminosity, the present system would experience a dynamic inefficiency caused mainly by data losses due to buffer overflows. The Phase I upgrade of the CMS pixel detector, described in this paper, will operate at full efficiency at an instantaneous luminosity of $2 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, thanks to a new readout chip. The new detector will feature one additional tracking point both in the barrel and in the forward regions, while reducing the material budget as a result of a new CO$_{2}$ cooling system and optimised layout of the services. In this paper, the design and the technological choices of the Phase I detect...

  2. Development of low background CdZnTe detectors for detection of double beta decays of sup 6 sup 4 Zn

    CERN Document Server

    Watanabe, T; Takahisa, K; Tanikawa, M; Ito, Y

    1999-01-01

    Development of low background CdZnTe detectors is in progress to study neutrino-less double beta decay. The mu tau product (mobility times lifetime) for holes was measured in a set of CdZnTe detectors at various temperatures between +22 deg. C and -40 deg. C in order to investigate charge collection efficiencies for holes. The sensitivity of CdZnTe detectors to neutrino-less beta sup + EC decays of sup 6 sup 4 Zn ( sup 6 sup 4 Zn+EC-> sup 6 sup 4 Ni+beta sup +) is estimated from these data.

  3. Simulation of the anode structure for capacitive frisch grid CdZnTe detectors

    International Nuclear Information System (INIS)

    CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution. The anode structrure might have an important role in improving the weighting potential distribution of the detectors. In this paper, four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation, based on a 3-dimensional weighting potential analysis. The weighting potential distributions in modified anode devices (Model B, C and D) are optimized compared with a square device (Model A). In model C and D, the abrupt weighting potential can be well modified. However, with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D, the weighting potential does not vary too much. (authors)

  4. CdTe and CdZnTe crystals for room temperature gamma-ray detectors

    CERN Document Server

    Franc, J; Belas, E; Grill, R; Hlidek, P; Moravec, P; Bok, J B

    1999-01-01

    CdTe(Cl) detectors from CdTe single crystals, grown by the Bridgman method from Te-rich melt, were fabricated. The quality of the detectors was tested with sup 5 sup 7 Co and sup 2 sup 4 sup 1 Am sources. In the sup 5 sup 7 Co spectrum low noise is demonstrated by the presence of a 14 keV peak and good resolution approx 7 keV (FWHM) evident from the separation of 122 and 136 keV peaks. A review is given of the state-of-the-art properties of (CdZn)Te single crystals prepared for substrates in the Institute of Physics of Charles University. The quality of samples is tested by measurements of the diffusion length of minority carriers, from which the mobility-lifetime product is evaluated. (author)

  5. Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors

    Institute of Scientific and Technical Information of China (English)

    MIN Jiahua; SHI Zhubin; QIAN Yongbiao; SANG Wenbin; ZHAO Hengyu; TENG Jianyong; LIU Jishan

    2009-01-01

    CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution.The anode structure might have an important role in improving the weighting potential distribution of the detectors.In this paper,four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation,based on a 3-dimensional weighting potential analysis.The weighting potential distributions in modified anode devices (Model B,C and D) are optimized compared with a square device (Model A).In model C and D,the abrupt weighting potential can be well modified.However,with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D,the weighting potential does not vary too much.

  6. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author)

  7. The ALICE Silicon Pixel Detector System

    CERN Document Server

    Fadmar Osmic, FO

    2006-01-01

    The European Organization for Particle Physics (CERN) in Geneva is currently constructing the Large Hadron Collider (LHC), which will allow the study of the subnuclear ranges of physics with an accuracy never achieved before. Within the LHC project, ALICE is to the study of strongly interacting matter at extreme densities and high temperatures. ALICE as many other modern High Energy Physics (HEP) experiments uses silicon pixel detectors for tracking close to the interaction point (IP). The ALICE Silicon Pixel Detector (SPD) will constitute the two innermost layers of ALICE, and will due to its high granularity provide precise tracking information. In heavy ion collisions, the track density could be as high as 80 tracks/cm2 in the first SPD layer. The SPD will provide tracking information at radii of 3.9 and 7.6 cm from the IP. It is a fundamental element for the study of the weak decays of the particles carrying heavy flavour, whose typical signature will be a secondary vertex separated from the primary verte...

  8. ATLAS rewards two pixel detector suppliers

    CERN Multimedia

    2007-01-01

    Peter Jenni, ATLAS spokesperson, presented the ATLAS supplier award to Herbert Reichl, IZM director, and to Simonetta Di Gioia, from the SELEX company.Two of ATLAS’ suppliers were awarded prizes at a ceremony on Wednesday 13 June attended by representatives of the experiment’s management and of CERN. The prizes went to the Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (IZM) in Berlin and the company SELEX Sistemi Integrati in Rome for the manufacture of modules for the ATLAS pixel detector. SELEX supplied 1500 of the modules for the tracker, while IZM produced a further 1300. The modules, each made up of 46080 channels, form the active part of the ATLAS pixel detector. IZM and SELEX received the awards for the excellent quality of their work: the average number of faulty channels per module was less than 2.10-3. They also stayed within budget and on schedule. The difficulty they faced was designing modules based on electronic components and sensor...

  9. Commissioning the CMS pixel detector with Cosmic Rays

    CERN Document Server

    Heyburn, Bernadette

    2009-01-01

    The Compact Muon Solenoid (CMS) is one of two general purpose experiments at the Large Hadron Collider. The CMS experiment prides itself on an ambitious, all silicon based, tracking system. After almost 20 years of design and construction the CMS tracker detector has been installed and commissioned. The tracker detector consists of ten layers of silicon microstrip detectors while three layers of pixel detector modules are situated closest to the interaction point. The pixel detector consists of 66 million pixels of 100mm 150mm size, and is designed to use the shape of the actual charge distribution of charged particles to gain hit resolutions down to 12mm. This paper will focus on commissioning activities in the CMS pixel detector. Results from cosmic ray studies will be presented, in addition to results obtained from the integration of the pixel detector within the CMS detector and various calibration and alignment analyses.

  10. Detector performance of the ALICE silicon pixel detector

    CERN Document Server

    Cavicchioli, C

    2011-01-01

    The ALICE Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE Inner Tracking System (ITS). It consists of two barrel layers of hybrid silicon pixel detectors at radii of 39 and 76 mm. The physics targets of the ALICE experiment require that the material budget of the SPD is kept within approximate to 1\\%X(0) per layer. This has set some stringent constraints on the design and construction of the SPD. A unique feature of the ALICE SPD is that it is capable of providing a prompt trigger signal, called Fast-OR, which contributes to the L0 trigger decision. The pixel trigger system allows to apply a set of algorithms for the trigger selection, and its output is sent to the Central Trigger Processor (CTP). The detector has been installed in the experiment in summer 2007. During the first injection tests in June 2008 the SPD was able to record the very first sign of life of the LHC by registering secondary particles from the beam dumped upstream the ALICE experiment. In the following months the...

  11. Operational experience with the ATLAS Pixel Detector at the LHC

    Science.gov (United States)

    Lapoire, C.; Atlas Collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy is sufficiently low and hit efficiency exceed the design specification.

  12. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Hirschbuehl, D; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.7% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  13. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Keil, M; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  14. Operational experience with the ATLAS Pixel detector at the LHC

    CERN Document Server

    Deluca, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5\\% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, ...

  15. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Ince, T; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.8% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  16. Operational experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lapoire, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  17. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lapoire, C; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification.

  18. Operational Experience with the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Lange, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump- bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, a...

  19. Operational experience with the ATLAS Pixel detector at the LHC

    CERN Document Server

    Deluca, C; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

  20. Clustering method to process signals from a CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lan; Takahashi, Hiroyuki; Fukuda, Daiji; Nakazawa, Masaharu [Tokyo Univ., Graduate School of Engineering, Department of Quantum Engineering and Systems Science, Tokyo (Japan)

    2001-07-01

    The poor mobility of holes in a compound semiconductor detector results in the imperfect collection of the primary charge deposited in the detector. Furthermore the fluctuation of the charge loss efficiency due to the change in the hole collection path length seriously degrades the energy resolution of the detector. Since the charge collection efficiency varies with the signal waveform, we can expect the improvement of the energy resolution through a proper waveform signal processing method. We developed a new digital signal processing technique, a clustering method which derives typical patterns containing the information on the real situation inside a detector from measured signals. The obtained typical patterns for the detector are then used for the pattern matching method. Measured signals are classified through analyzing the practical waveform variation due to the charge trapping, the electric field and the crystal defect etc. Signals with similar shape are placed into the same cluster. For each cluster we calculate an average waveform as a reference pattern. Using these reference patterns obtained from all the clusters, we can classify other measured signal waveforms from the same detector. Then signals are independently processed according to the classified category and form corresponding spectra. Finally these spectra are merged into one spectrum by multiplying normalization coefficients. The effectiveness of this method was verified with a CdZnTe detector of 2 mm thick and a {sup 137}Cs gamma-ray source. The obtained energy resolution as improved to about 8 keV (FWHM). Because the clustering method is only related to the measured waveforms, it can be applied to any type and size of detectors and compatible with any type of filtering methods. (author)

  1. Pixel detector modules performance for ATLAS IBL and future pixel detectors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00355104; Pernegger, Heinz

    2015-11-06

    The ATLAS Detector is one of the four big particle physics experiments at CERN’s LHC. Its innermost tracking system consisted of the 3-Layer silicon Pixel Detector (~80M readout channels) in the first run (2010-2012). Over the past two years it was refurbished and equipped with new services as well as a new beam monitor. The major upgrade, however, was the Insertable B-Layer (IBL). It adds ~12M readout channels for improved vertexing, tracking robustness and b-tagging performance for the upcoming runs, before the high luminosity upgrade of the LHC will take place. This thesis covers two main aspects of Pixel detector performance studies: The main work was the planning, commissioning and operation of a test bench that meets the requirements of current pixel detector components. Each newly built ATLAS IBL stave was thoroughly tested, following a specifically developed procedure, and initially calibrated in that setup. A variety of production accompanying measurements as well as preliminary results after integ...

  2. Radiation detection. Chapter 4. Effects of tellurium precipitates on charge collection in CZT (CdZnTe) nuclear radiation detectors

    International Nuclear Information System (INIS)

    It has been recently demonstrated that individual Tellurium (Te) precipitates identified with infrared (IR) transmission microscopes in radiation detector-grade CdZnTe (CZT) crystals correlate precisely with poor charge collection. This indicates that Te precipitates adversely affect the electron charge collection efficiency and thus the performance of nuclear radiation detectors produced from the crystals. By employing different techniques it is investigated how Te precipitates affect different CZT devices. These measurements indicate that Te precipitates put limits on the size, electrode configurations and spectral performance of CZT detectors. These limits can be relaxed by lowering the size and density of Te precipitates in the detectors

  3. Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

    2010-08-01

    Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

  4. CdZnTe detector for computed tomography based on weighting potential

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Hyun Jong; Park, Chan Sun; Kim, Jung Su; Kim, Jung Min; Choi, Jong Hak; Kim, Ki Hyun [Korea University, Seoul (Korea, Republic of)

    2016-03-15

    Room-temperature operating CdZnTe(CZT) material is an innovative radiation detector which could reduce the patient dose to one-tenth level of conventional CT (Computed Tomography) and mammography system. The pixel and pixel pitch in the imaging device determine the conversion efficiency of incident Xor gamma-ray and the cross-talk of signal, that is, image quality of detector system. The weighting potential is the virtual potential determined by the position and geometry of electrode. The weighting potential obtained by computer-based simulation in solving Poisson equation with proper boundaries condition. The pixel was optimized by considering the CIE (charge induced efficiency) and the signal cross-talk in CT detector system. The pixel pitch was 1-mm and the detector thickness was 2-mm in the simulation. The optimized pixel size and inter-pixel distance for maximizing the CIE and minimizing the signal cross-talk is about 750 μm and 125 μm, respectively.

  5. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    Science.gov (United States)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-06-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems.

  6. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  7. Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts

    Science.gov (United States)

    Chang, Y.; Grein, C. H.; Becker, C. R.; Huang, J.; Ghosh, S.; Aqariden, F.; Sivananthan, S.

    2012-10-01

    Room-temperature-operating CdZnTe radiation detectors have high energy resolution, linear energy response and are capable of operating in normal counting and spectroscopic modes, hence are highly desirable for medical diagnosis, nondestructive industrial evaluations, homeland security, counterterrorism inspections and nuclear proliferation detection to ensure national and international nuclear safety. HgTe/HgCdTe superlattices can be designed to selectively transport one carrier species while hindering transport of the other. Specifically, one designs a large carrier effective mass for undesired carriers in the electric field direction, which results in low carrier velocities, and yet a density of states for undesired carrier that is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations, hence a low current density under an electric field. The opposite carrier species can be designed to have a large velocity and high density of states, hence producing a large current density. By employing HgTe/HgCdTe superlattices as contact layers intermediate between CdZnTe absorbers and metal contacts, leakage currents under high electric fields are reduced and improved x-ray and γ-ray detector performance is anticipated. Pixilated CdZnTe radiation detectors arrays were fabricated and characterized to evaluate the effectiveness of HgTe/HgCdTe superlattices in reducing leakage currents. Current-voltage characteristics show that HgTe/HgCdTe superlattice contact layers consistently result in significantly reduced leakage currents relative to detectors with only metal contacts.

  8. Semiconductor Pixel detectors and their applications in life sciences

    International Nuclear Information System (INIS)

    Recent advances in semiconductor technology allow construction of highly efficient and low noise pixel detectors of ionizing radiation. Steadily improving quality of front end electronics enables fast digital signal processing in each pixel which offers recording of more complete information about each detected quantum (energy, time, number of particles). All these features improve an extend applicability of pixel technology in different fields. Some applications of this technology especially for imaging in life sciences will be shown (energy and phase sensitive X-ray radiography and tomography, radiography with heavy charged particles, neutron radiography, etc). On the other hand a number of obstacles can limit the detector performance if not handled. The pixel detector is in fact an array of individual detectors (pixels), each of them has its own efficiency, energy calibration and also noise. The common effort is to make all these parameters uniform for all pixels. However an ideal uniformity can be never reached. Moreover, it is often seen that the signal in one pixel can affect the neighbouring pixels due to various reasons (e.g. charge sharing). All such effects have to be taken into account during data processing to avoid false data interpretation. A brief view into the future of pixel detectors and their applications including also spectroscopy, tracking and dosimetry is given too. Special attention is paid to the problem of detector segmentation in context of the charge sharing effect.

  9. Cumulative effects of Te precipitates in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

  10. Status of the digital pixel array detector for protein crystallography

    CERN Document Server

    Datte, P; Beuville, E; Endres, N; Druillole, F; Luo, L; Millaud, J E; Xuong, N H

    1999-01-01

    A two-dimensional photon counting digital pixel array detector is being designed for static and time resolved protein crystallography. The room temperature detector will significantly enhance monochromatic and polychromatic protein crystallographic through-put data rates by more than three orders of magnitude. The detector has an almost infinite photon counting dynamic range and exhibits superior spatial resolution when compared to present crystallographic phosphor imaging plates or phosphor coupled CCD detectors. The detector is a high resistivity N-type Si with a pixel pitch of 150x150 mu m, and a thickness of 300 mu m, and is bump bonded to an application specific integrated circuit. The event driven readout of the detector is based on the column architecture and allows an independent pixel hit rate above 1 million photons/s/pixel. The device provides energy discrimination and sparse data readout which yields minimal dead-time. This type of architecture allows a continuous (frameless) data acquisition, a f...

  11. Simulation of single-event energy-deposition spreading in a hybrid pixellated detector for gamma imaging

    CERN Document Server

    Manach, E

    2002-01-01

    In the framework of the Medipix2 Collaboration, a new photon-counting chip is being developed made of a 256x256 array of 55 mu m-side square pixels. Although the chip was primarily developed for semiconductor X-ray imagers, we think that this type of device could be used in applications such as decommissioning of nuclear facilities where typical sources have gamma-ray energies in the range of a few hundred keV. In order to enhance the detection efficiency in this energy range, we envisage connecting the Medipix2 chip to a CdTe or CdZnTe substrate (at least 1 mm thick). The small pixel size, the thickness of the Cd(Zn)Te substrate and the high photon energy motivate us to estimate first the spatial energy spreading following a photon interaction inside the detector. Estimations were made using the MCNP Monte Carlo package by simulating the individual energy distribution for each primary photon interaction. As an illustration of our results, simulating a 660 keV gamma source, we found that there are two pixels ...

  12. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    CERN Document Server

    Eisen, Y; Mardor, I

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used pla...

  13. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    Directory of Open Access Journals (Sweden)

    Anna Maria Mancini

    2009-05-01

    Full Text Available Over the last decade, cadmium telluride (CdTe and cadmium zinc telluride (CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si and germanium (Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  14. Comparison of CdTe and CdZnTe Detectors for Field Determination of Uranium Isotopic Enrichments

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, KJ

    2004-01-23

    A performance comparison of a CdTe and a CdZnTe detector when exposed to uranium samples of various isotopic enrichments has been performed. These high-resolution detectors can assist in the rapid determination of uranium isotopic content of illicit material. Spectra were recorded from these room temperature semiconductor detectors with a portable multi-channel analyzer, both in the laboratory and in a field environment. Both detectors were operated below ambient temperature using the vendor supplied thermoelectric coolers. Both detectors had nominally the same active volume (18 mm3 for the CdZnTe and 25 mm3 for the CdTe detector) and resolution. Spectra of samples of known isotopic content were recorded at fixed geometries. An evaluation of potential signature g rays for the detection of enriched uranium was completed. Operational advantages and disadvantages of each detector are discussed. There is a need to improve the detection sensitivity during the interdiction of special nuclear materials (SNM) for increased homeland protection. It is essential to provide additional tools to first responders and law enforcement personnel for assessing nuclear and radiological threats.

  15. Status of the CMS Phase I pixel detector upgrade

    Science.gov (United States)

    Spannagel, S.

    2016-09-01

    A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

  16. Status of the CMS Phase I Pixel Detector Upgrade

    CERN Document Server

    AUTHOR|(CDS)2083994

    2016-01-01

    A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

  17. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    Science.gov (United States)

    Lebrun, A.; Bignan, G.; Szabo, J. L.; Arenas-Carrasco, J.; Arlt, R.; Dubreuil, A.; Esmailpur Kazerouni, K.

    2000-07-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR) coupled to a gamma transport code (MCNP) allows us to predict and interpret the experimental data from CdZnTe detectors. Particularly, bremsstrahlung contribution to the gamma spectra is suggested and modeled. Calculation results indicate a good agreement between this hypothesis and the present measurements.

  18. Small pixel CZT detector for hard X-ray spectroscopy

    Science.gov (United States)

    Wilson, Matthew David; Cernik, Robert; Chen, Henry; Hansson, Conny; Iniewski, Kris; Jones, Lawrence L.; Seller, Paul; Veale, Matthew C.

    2011-10-01

    A new small pixel cadmium zinc telluride (CZT) detector has been developed for hard X-ray spectroscopy. The X-ray performance of four detectors is presented and the detectors are analysed in terms of the energy resolution of each pixel. The detectors were made from CZT crystals grown by the travelling heater method (THM) bonded to a 20×20 application specific integrated circuit (ASIC) and data acquisition (DAQ) system. The detectors had an array of 20×20 pixels on a 250 μm pitch, with each pixel gold-stud bonded to an energy resolving circuit in the ASIC. The DAQ system digitised the ASIC output with 14 bit resolution, performing offset corrections and data storage to disc in real time at up to 40,000 frames per second. The detector geometry and ASIC design was optimised for X-ray spectroscopy up to 150 keV and made use of the small pixel effect to preferentially measure the electron signal. A 241Am source was used to measure the spectroscopic performance and uniformity of the detectors. The average energy resolution (FWHM at 59.54 keV) of each pixel ranged from 1.09±0.46 to 1.50±0.57 keV across the four detectors. The detectors showed good spectral performance and uniform response over almost all pixels in the 20×20 array. A large area 80×80 pixel detector will be built that will utilise the scalable design of the ASIC and the large areas of monolithic spectroscopic grade THM grown CZT that are now available. The large area detector will have the same performance as that demonstrated here.

  19. A low mass pixel detector upgrade for CMS

    CERN Document Server

    Kaestli, Hans-Christian

    2010-01-01

    and commissioning of the present pixel detector, we intend to upgrade the whole pixel detector in 2015. The main focus is on lowering the material budget and adding more tracking points. We will present the design of a new low mass pixel system consisting of 4 barrel layers and 3 end cap disks on each side. The design comprises of thin detector modules and a lightweight mechanical support structure using CO2 cooling. In addition, large efforts have been made to move material from the services out of the tracking regi...

  20. Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sklyarchuk, V. [Chernivtsi National Univ. (Ukraine); Fochuk, p. [Chernivtsi National Univ. (Ukraine); Rarenko, I. [Chernivtsi National Univ. (Ukraine); Zakharuk, Z. [Chernivtsi National Univ. (Ukraine); Sklyarchuk, O. F. [Chernivtsi National Univ. (Ukraine); Bolotnikov, A. E. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. B. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-08-01

    We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).

  1. Diamond and silicon pixel detectors in high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Tsung, Jieh-Wen

    2012-10-15

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

  2. DAQ Hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment was extended by about 12 million pixels with the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented by employing newly designed read-out hardware, which supports the full detector bandwidth even for calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  3. Online calibrations and performance of the ATLAS Pixel Detector

    CERN Document Server

    Keil, M; The ATLAS collaboration

    2010-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 M electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. The talk will give an overview of the calibration and performance of both the detector and its optical readout. The most basic parameter to be tuned and calibrated for the detector electronics is the readout threshold of the individual pixel channels. These need to be carefully tuned to optimise position resolution a...

  4. New pixelized Micromegas detector for the COMPASS experiment

    CERN Document Server

    Neyret, Damien; Bedfer, Yann; Burtin, Etienne; d'Hose, Nicole; Giganon, Arnaud; Ketzer, Bernhard; Konorov, Igor; Kunne, Fabienne; Magnon, Alain; Marchand, Claude; Paul, Bernard; Platchkov, Stéphane; Vandenbroucke, Maxence

    2009-01-01

    New Micromegas (Micro-mesh gaseous detectors) are being developed in view of the future physics projects planned by the COMPASS collaboration at CERN. Several major upgrades compared to present detectors are being studied: detectors standing five times higher luminosity with hadron beams, detection of beam particles (flux up to a few hundred of kHz/mm^2, 10 times larger than for the present detectors) with pixelized read-out in the central part, light and integrated electronics, and improved robustness. Studies were done with the present detectors moved in the beam, and two first pixelized prototypes are being tested with muon and hadron beams in real conditions at COMPASS. We present here this new project and report on two series of tests, with old detectors moved into the beam and with pixelized prototypes operated in real data taking condition with both muon and hadron beams.

  5. Characteristics of a Frisch collar grid CdZnTe radiation detector grown by low-pressure Bridgman method

    Science.gov (United States)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    A single-polarity charge-sensing method was studied by using a CdZnTe Frisch collar grid detector grown by using a low-pressure Bridgeman furnace at the Korea Atomic Energy Research Institute (KAERI). The Frisch collar grid CdZnTe detector has an active volume of 5 × 5 × 10 mm3, and was fabricated from a single crystal, Teflon tape and copper tape used as a Frisch collar grid. A room-temperature energy resolution of 6% full width at half maximum (FWHM) was obtained for the 662keV peak of Cs-137 without any additional electrical corrections. The detector's fabrication process is described, and its characteristics are discussed. Finally, the charge transport properties and gamma-ray energy resolution of the fabricated Frisch collar grid detector are compared with those of two other Frisch collar detectors grown by using different crystal growth methods and purchased from eV-products and Redlen technology.

  6. Monolithic CMOS pixel detector for international linear collider vertex detection

    Indian Academy of Sciences (India)

    J E Brau; O Igonkina; N Sinew; D Strom; C Baltay; W Emmet; H Neal; D Rabinowitz

    2007-12-01

    A monolithic CMS pixel detector is under development for an ILC experiment. This chronopixel array provides a time stamp resolution of one bunch crossing, a critical feature for background suppression. The status of this effort is summarized.

  7. A new CMS pixel detector for the LHC luminosity upgrade

    OpenAIRE

    Favaro, Carlotta; Collaboration, for the CMS

    2011-01-01

    The CMS inner pixel detector system is planned to be replaced during the first phase of the LHC luminosity upgrade. The plans foresee an ultra low mass system with four barrel layers and three disks on either end. With the expected increase in particle rates, the electronic readout chain will be changed for fast digital signals. An overview of the envisaged design options for the upgraded CMS pixel detector is given, as well as estimates of the tracking and vertexing performance.

  8. Silicon Pixel Detectors for Synchrotron Applications

    CERN Document Server

    Stewart, Graeme Douglas

    Recent advances in particle accelerators have increased the demands being placed on detectors. Novel detector designs are being implemented in many different areas including, for example, high luminosity experiments at the LHC or at next generation synchrotrons. The purpose of this thesis was to characterise some of these novel detectors. The first of the new detector types is called a 3D detector. This design was first proposed by Parker, Kenney and Segal (1997). In this design, doped electrodes are created that extend through the silicon substrate. When compared to a traditional photodiode with electrodes on the opposing surfaces, the 3D design can combine a reasonable detector thickness with a small electrode spacing resulting in fast charge collection and limited charge sharing. The small electrode spacing leads to the detectors having lower depletion voltages. This, combined with the fast collection time, makes 3D detectors a candidate for radiation hard applications. These applications include the upgra...

  9. The Phase-1 upgrade of the CMS silicon pixel detector

    CERN Document Server

    Menichelli, Mauro

    2015-01-01

    The present CMS pixel detector will be replaced in the shutdown period 2016/17 by an upgraded version due to the following reasons: increased luminosity at reduced bunch spacing ( from 7 x 10 33 cm - 2 s - 1 at 50 ns bunch spacing to 2 x 10 34 cm - 2 s - 1 at 25 ns bunch spacing) in the LHC , and radiation damage effects that will significantly degrade the present detector. The new upgraded detector will have higher tracking efficiency and lower mass with four barrel layer and three forward/backward disks to provide higher hit pixel coverage out to pseudorapidities of ±2.5. In this paper we will describe the new pixel detector focus ing mostly on the barrel detector design, construction and expected performances

  10. The Phase-1 Upgrade of the CMS Pixel Detector

    CERN Document Server

    Klein, Katja

    2016-01-01

    The CMS experiment features a pixel detector with three barrel layers and two disks per side, corresponding to an active silicon area of 1\\,m$^2$. The detector delivered high-quality data during LHC Run~1. However, the CMS pixel detector was designed for the nominal instantaneous LHC luminosity of $1\\cdot 10^{34}\\,$cm$^{-2}$s$^{-1}$. It is expected that the instantaneous luminosity will increase and reach twice the design value before Long Shutdown 3, scheduled for 2023. Under such conditions, the present readout chip would suffer from data loss due to buffer overflow, leading to significant inefficiencies of up to~16\\,\\%. The CMS collaboration is presently constructing a new pixel detector to replace the present device during the winter shutdown 2016/2017. The design of this new detector will be outlined, the construction status summarized and the performance described.

  11. First Results of the Pixel Detector Performance in 2015

    CERN Document Server

    CMS Collaboration

    2015-01-01

    The CMS pixel detector consists of 66 million pixels arranged in three cylindric layers in the barrel region and two end-cap disks on each side of the barrel. It is used for seeding in track reconstruction. It is also the most important tool for vertex reconstruction. This report documents the good fraction of the pixel detector at the start of data-taking in 2015, its efficiency at low luminosity and 50 ns bunch-spacing, and the first measurements of the Lorentz-angle. Details are also given on the timing adjustment in the first collisions, and verification of the full depletion voltage.

  12. Operational Experience with the ATLAS Pixel Detector at LHC

    CERN Document Server

    Keil, M

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus crucial for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via front-end chips bump-bonded to 1744 n-on-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including calibration procedures, detector performance and measurements of radiation damage. The detector performance is excellent: more than 95% of the pixels are operational, noise occupancy and hit efficiency exceed the des...

  13. DAQ hardware and software development for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed read-out hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the read-out boards. The same boards will be used to upgrade the read-out bandwidth for the two outermost layers of the ATLAS Pixel Barrel (54 million pixels). We present the IBL read-out hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  14. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  15. Neural network based cluster creation in the ATLAS Pixel Detector

    CERN Document Server

    Andreazza, A; The ATLAS collaboration

    2012-01-01

    The read-out from individual pixels on planar semi-conductor sensors are grouped into clusters to reconstruct the location where a charged particle passed through the sensor. The resolution given by individual pixel sizes is significantly improved by using the information from the charge sharing be- tween pixels. Such analog cluster creation techniques have been used by the ATLAS experiment for many years to obtain an excellent performance. How- ever, in dense environments, such as those inside high-energy jets, clusters have an increased probability of merging the charge deposited by multiple particles. Recently, a neural network based algorithm which estimates both the cluster position and whether a cluster should be split has been developed for the ATLAS Pixel Detector. The algorithm significantly reduces ambigui- ties in the assignment of pixel detector measurement to tracks and improves the position accuracy with respect to standard techniques by taking into account the 2-dimensional charge distribution.

  16. DAQ hardware and software development for the ATLAS Pixel Detector

    Science.gov (United States)

    Stramaglia, Maria Elena

    2016-07-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed readout hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the readout boards. The same boards will be used to upgrade the readout bandwidth for the two outermost barrel layers of the ATLAS Pixel Detector. We present the IBL readout hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel Detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  17. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    OpenAIRE

    Anna Maria Mancini; Andrea Zappettini; Ezio Caroli; Leonardo Abbene; Stefano Del Sordo; Pietro Ubertini

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status...

  18. Charge induction in semiconductor detectors with pixellated structure

    NARCIS (Netherlands)

    Samedov, Victor V.

    2007-01-01

    Considerable interest is now being attracted to the next generation of compound semiconductor detectors with pixellated structure in application to x-ray and gamma-astronomy, nuclear spectroscopy and nuclear medicine. The spatial resolution of this type of detectors is mainly determined by the proce

  19. Micro-pixel accuracy centroid displacement estimation and detector calibration

    CERN Document Server

    Zhai, Chengxing; Goullioud, Renaud; Nemati, Bijan

    2011-01-01

    Precise centroid estimation plays a critical role in accurate astrometry using telescope images. Conventional centroid estimation fits a template point spread function (PSF) to the image data. Because the PSF is typically not known to high accuracy due to wavefront aberrations and uncertainties in optical system, a simple Gaussian function is commonly used. PSF knowledge error leads to systematic errors in the conventional centroid estimation. In this paper, we present an accurate centroid estimation algorithm by reconstructing the PSF from well sampled (above Nyquist frequency) pixelated images. In the limit of an ideal focal plane array whose pixels have identical response function (no inter-pixel variation), this method can estimate centroid displacement between two 32$\\times$32 images to sub-micropixel accuracy. Inter-pixel response variations exist in real detectors, {\\it e.g.}~CCDs, which we can calibrate by measuring the pixel response of each pixel in Fourier space. The Fourier transforms of the inter...

  20. A low mass pixel detector upgrade for CMS

    CERN Document Server

    Kästli, H C

    2010-01-01

    The CMS pixel detector has been designed for a peak luminosity of 10^34cm-2s-1 and a total dose corresponding to 2 years of LHC operation at a radius of 4 cm from the interaction region. Parts of the pixel detector will have to be replaced until 2015. The detector performance will be degraded for two reasons: radiation damage of the innermost layers and the planned increase of the LHC peak luminosity by a factor of 2-3. Based on the experience in planning, constructing and commissioning of the present pixel detector, we intend to upgrade the whole pixel detector in 2015. The main focus is on lowering the material budget and adding more tracking points. We will present the design of a new low mass pixel system consisting of 4 barrel layers and 3 end cap disks on each side. The design comprises of thin detector modules and a lightweight mechanical support structure using CO2 cooling. In addition, large efforts have been made to move material from the services out of the tracking region.

  1. The Level 0 Pixel Trigger System for the ALICE Silicon Pixel Detector: implementation, testing and commissioning

    CERN Document Server

    Aglieri-Rinella, G

    2008-01-01

    The ALICE Silicon Pixel Detector transmits 1200 Fast-OR signals every 100 ns on 120 optical readout channels. They indicate the presence of at least one hit in the pixel matrix of each readout chip. The ALICE Level 0 Pixel Trigger System extracts them, processes them and delivers an input signal to the Central Trigger Processor for the first level trigger decision within a latency of 800 ns. This paper describes tests and measurements made on the system during the qualification and commissioning phases. These included Bit Error Rate tests on the Fast-OR data path, the measurement of the overall process latency and the recording of calibration data with cosmic rays. The first results of the operation of the Pixel Trigger System with the SPD detector in the ALICE experiment are also presented.

  2. Hybrid Pixel Detectors for gamma/X-ray imaging

    Science.gov (United States)

    Hatzistratis, D.; Theodoratos, G.; Zografos, V.; Kazas, I.; Loukas, D.; Lambropoulos, C. P.

    2015-09-01

    Hybrid pixel detectors are made by direct converting high-Z semi-insulating single crystalline material coupled to complementary-metal-oxide semiconductor (CMOS) readout electronics. They are attractive because direct conversion exterminates all the problems of spatial localization related to light diffusion, energy resolution, is far superior from the combination of scintillation crystals and photomultipliers and lithography can be used to pattern electrodes with very fine pitch. We are developing 2-D pixel CMOS ASICs, connect them to pixilated CdTe crystals with the flip chip and bump bonding method and characterize the hybrids. We have designed a series of circuits, whose latest member consists of a 50×25 pixel array with 400um pitch and an embedded controller. In every pixel a full spectroscopic channel with time tagging information has been implemented. The detectors are targeting Compton scatter imaging and they can be used for coded aperture imaging too. Hybridization using CMOS can overcome the limit put on pixel circuit complexity by the use of thin film transistors (TFT) in large flat panels. Hybrid active pixel sensors are used in dental imaging and other applications (e.g. industrial CT etc.). Thus X-ray imaging can benefit from the work done on dynamic range enhancement methods developed initially for visible and infrared CMOS pixel sensors. A 2-D CMOS ASIC with 100um pixel pitch to demonstrate the feasibility of such methods in the context of X-ray imaging has been designed.

  3. The CMS pixel detector and challenges for its upgrade

    CERN Document Server

    Bean, A

    2009-01-01

    The CMS pixel detector was installed in July 2008 in the innermost region of CMS. It consists of 66M pixels of 100um*150um size over 3 barrel layers and 2 forward disks. The pixel system has been successfully commissioned. Over 80K muon tracks were taken during the CMS cosmic runs and the detector is ready for the first physics run. The pixel detector, so close to the interaction point, will be exposed to a very high radiation dose. The estimation is that the first barrel layer, located at 4.3 cm from the beam pipe, after 3 years of LHC running at full luminosity, will become inefficient for position resolution reconstruction. For this reason, a substitution of a new pixel detector in 2014 has been already scheduled. At the same time an LHC luminosity upgrade is also planned. While a simple rebuild of the current detector could be done, the expectation is to design a new one, optimized for higher luminosity. This paper describes the present system and its performance as well as possible solutions for the upgr...

  4. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  5. Small-Scale Readout Systems Prototype for the STAR PIXEL Detector

    OpenAIRE

    Szelezniak, Michal A.

    2008-01-01

    A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations of MAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of t...

  6. Online Calibration and Performance of the ATLAS Pixel Detector

    CERN Document Server

    Keil, M

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 million electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. This paper describes the tuning and calibration of the optical links and the detector modules, including measurements of threshold, noise, charge measurement, timing performance and the sensor leakage current.

  7. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the Pixel detector fulfills two main purposes: to tune front-end registers for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied toghether to chips with dierent characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  8. Calibration Analysis Software for the ATLAS Pixel Detector

    CERN Document Server

    Stramaglia, Maria Elena; The ATLAS collaboration

    2015-01-01

    The calibration of the ATLAS Pixel detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied together to chips with different characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

  9. Calibration analysis software for the ATLAS Pixel Detector

    Science.gov (United States)

    Stramaglia, Maria Elena

    2016-07-01

    The calibration of the ATLAS Pixel Detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel Detector scans and analyses is called calibration console. The introduction of a new layer, equipped with new FE-I4 chips, required an update of the console architecture. It now handles scans and scan analyses applied together to chips with different characteristics. An overview of the newly developed calibration analysis software will be presented, together with some preliminary results.

  10. Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fahim Farah, Fahim Farah [Northwestern U. (main); Deptuch, Grzegorz W. [Fermilab; Hoff, James R. [Fermilab; Mohseni, Hooman [Northwestern U. (main)

    2015-08-28

    The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

  11. Novel integrated CMOS pixel structures for vertex detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bieser, Fred; Chen, Yandong; Gareus, Robin; Matis, Howard S.; Oldenburg, Markus; Retiere, Fabrice; Ritter, Hans Georg; Wieman, Howard H.; Yamamoto, Eugene

    2003-10-29

    Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections.

  12. Overview of the BTeV Pixel Detector

    International Nuclear Information System (INIS)

    BTeV is a new Fermilab beauty and charm experiment designed to operate in the CZero region of the Tevatron collider. Critical to the success of BTeV is its pixel detector. The unique features of this pixel detector include its proximity to the beam, its operation with a beam crossing time of 132 ns, and the need for the detector information to be read out quickly enough to be used for the lowest level trigger. This talk presents an overview of the pixel detector design, giving the motivations for the technical choices made. The status of the current RandD on detector components is also reviewed. Additional Pixel 2002 talks on the BTeV pixel detector are given by Dave Christian[1], Mayling Wong[2], and Sergio Zimmermann[3]. Table 1 gives a selection of pixel detector parameters for the ALICE, ATLAS, BTeV, and CMS experiments. Comparing the progression of this table, which I have been updating for the last several years, has shown a convergence of specifications. Nevertheless, significant differences endure. The BTeV data-driven readout, horizontal and vertical position resolution better than 9 (micro)m with the ± 300 mr forward acceptance, and positioning in vacuum and as close as 6 mm from the circulating beams remain unique. These features are driven by the physics goals of the BTeV experiment. Table 2 demonstrates that the vertex trigger performance made possible by these features is requisite for a very large fraction of the B meson decay physics which is so central to the motivation for BTeV. For most of the physics quantities of interest listed in the table, the vertex trigger is essential. The performance of the BTeV pixel detector may be summarized by looking at particular physics examples; e.g., the Bs meson decay Bs → Ds- K+. For that decay, studies using GEANT3 simulations provide quantitative measures of performance. For example, the separation between the Bs decay point and the primary proton-antiproton interaction can be measured with an rms

  13. Parallel readout of two-element CdZnTe detectors with real-time digital signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhubin; Wang Linjun; Qin Kaifeng; Min Jiahua; Zhang Jijun; Liang Xiaoyan; Huang Jian; Tang Ke; Xia Yiben, E-mail: ljwang@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

    2010-12-15

    Readout electronics, especially digital electronics, for two-element CdZnTe (CZT) detectors in parallel are developed. The preliminary results show the detection efficiency of the two-element CZT detectors in parallel with analog electronics is as many as 1.8 and 2.1 times the single ones, and the energy resolution (FWHM) is limited by that of the single one by the means of analog electronics. However, the digital method for signal processing will be sufficiently better by contrast with an analog method especially in energy resolution. The energy resolution by the means of digital electronics can be improved by about 26.67%, compared to that only with analog electronics, while their detection efficiency is almost the same. The cause for this difference is also discussed. (semiconductor devices)

  14. Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

    Science.gov (United States)

    Roy, U. N.; Mundle, R. M.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Pradhan, A. K.; James, R. B.

    2016-05-01

    CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging, and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts, and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability.

  15. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Bates, Richard L., E-mail: richard.bates@glasgow.ac.uk [SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J. [SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I. [The University of Liverpool, Liverpool (United Kingdom); Brown, S.; Pater, J. [The Univiersty of Manchester, Manchester (United Kingdom)

    2013-12-11

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 10{sup 16} 1 MeV n{sub eq} cm{sup −2}. The area of the pixel detector system will be over 5 m{sup 2} and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  16. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    Science.gov (United States)

    Bates, Richard L.; Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J.; Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I.; Brown, S.; Pater, J.

    2013-12-01

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm-2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  17. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    International Nuclear Information System (INIS)

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm−2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported

  18. Design Methodology: ASICs with complex in-pixel processing for Pixel Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fahim, Farah [Fermilab

    2014-10-31

    The development of Application Specific Integrated Circuits (ASIC) for pixel detectors with complex in-pixel processing using Computer Aided Design (CAD) tools that are, themselves, mainly developed for the design of conventional digital circuits requires a specialized approach. Mixed signal pixels often require parasitically aware detailed analog front-ends and extremely compact digital back-ends with more than 1000 transistors in small areas below 100μm x 100μm. These pixels are tiled to create large arrays, which have the same clock distribution and data readout speed constraints as in, for example, micro-processors. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout.

  19. Readout chip for the CMS pixel detector upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Rossini, Marco, E-mail: marco.rossini@phys.ethz.ch

    2014-11-21

    For the CMS experiment a new pixel detector is planned for installation during the extended shutdown in winter 2016/2017. Among the changes of the detector modified front end electronics will be used for higher efficiency at peak luminosity of the LHC and faster readout. The first prototype versions of the new readout chip have been designed and produced. The results of qualification and calibration for the new chip are presented in this paper.

  20. 3D electronics for hybrid pixel detectors – TWEPP-09

    CERN Document Server

    Godiot, S; Chantepie, B; Clémens, J C; Fei, R; Fleury, J; Fougeron, D; Garcia-Sciveres, M; Hemperek, T; Karagounis, M; Krueger, H; Mekkaoui, A; Pangaud, P; Rozanov, A; Wermes, N

    2009-01-01

    Future hybrid pixel detectors are asking for smaller pixels in order to improve spatial resolution and to deal with an increasing counting rate. Facing these requirements is foreseen to be done by microelectronics technology shrinking. However, this straightforward approach presents some disadvantages in term of performances and cost. New 3D technologies offer an alternative way with the advantage of technology mixing. For the upgrade of ATLAS pixel detector, a 3D conception of the read-out chip appeared as an interesting solution. Splitting the pixel functionalities into two separate levels will reduce pixel size and open the opportunity to take benefit of technology's mixing. Based on a previous prototype of the read-out chip FE-I4 (IBM 130nm), this paper presents the design of a hybrid pixel read-out chip using threedimensional Tezzaron-Chartered technology. In order to disentangle effects due to Chartered 130nm technology from effects involved by 3D architecture, a first translation of FEI4 prototype had ...

  1. Monitoring Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Schorlemmer, André Lukas; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

    2014-11-05

    Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

  2. ATLAS Pixel Detector Design For HL-LHC

    CERN Document Server

    Smart, Ben; The ATLAS collaboration

    2016-01-01

    The ATLAS Inner Detector will be replaced for the High-Luminosity LHC (HL-LHC) running in 2026. The new Inner Detector will be called the Inner Tracker (ITk). The ITk will cover an extended eta-range: at least to |eta|<3.2, and likely up to |eta|<4.0. The ITk will be an all-Silicon based detector, consisting of a Silicon strip detector outside of a radius of 362mm, and a Silicon pixel detector inside of this radius. Several novel designs are being considered for the ITk pixel detector, to cope with high-eta charged particle tracks. These designs are grouped into 'extended' and 'inclined' design-types. Extended designs have long pixel staves with sensors parallel to the beamline. High-eta particles will therefore hit these sensors at shallow angles, leaving elongated charge clusters. The length of such a charge cluster can be used to estimate the angle of the passing particle. This information can then be used in track reconstruction to improve tracking efficiency and reduce fake rates. Inclined designs ...

  3. Gamma spectrometric characterization of short cooling time nuclear spent fuels using hemispheric CdZnTe detectors

    CERN Document Server

    Lebrun, A; Szabó, J L; Arenas-Carrasco, J; Arlt, R; Dubreuil, A; Esmailpur-Kazerouni, K

    2000-01-01

    After years of cooling, nuclear spent fuel gamma emissions are mainly due to caesium isotopes which are emitters at 605, 662 and 796-801 keV. Extensive work has been done on such fuels using various CdTe or CdZnTe probes. When fuels have to be measured after short cooling time (during NPP outage) the spectrum is much more complex due to the important contributions of niobium and zirconium in the 700 keV range. For the first time in a nuclear power plant, four spent fuels of the Kozloduy VVER reactor no 4 were measured during outage, 37 days after shutdown of the reactor. In such conditions, good resolution is of particular interest, so a 20 mm sup 3 hemispheric crystal was used with a resolution better than 7 keV at 662 keV. This paper presents the experimental device and analyzes the results which show that CdZnTe commercially available detectors enabled us to perform a semi-quantitative determination of the burn-up after a short cooling time. In addition, it is discussed how a burn-up evolution code (CESAR)...

  4. KPIX a pixel detector imaging chip

    CERN Document Server

    Cadeddu, S; Caria, M

    2002-01-01

    We present a VLSI custom device, named KPIX, developed in a 0.6 mu m CMOS technology. The circuit is dedicated to readout solid-state detectors covering large areas (on the order of square centimetre) and featuring very small currents. KPIX integrates 1024 channels (current amplifiers) and 8 ADCs on a 15.5x4 mm sup 2 area. Both an analogue and digital readout are allowed, with a 10 bit amplitude resolution. Amplifiers are organized in 8 columns of 128 rows. When choosing the digital or the analogue readout, the complete set of channels can be read out in about 30 ms. The specific design of the amplification cells allows to measure very small input current levels, on the order of fractions of pico-ampere. Power consumption has also been kept at the level of 80 mu W per cell and 150 mW (peak value) in total. The specific chip architecture and geometry allow use of many KPIX circuits together in order to serve a large detector sensitive area. The KPIX structure is presented along with some measurements character...

  5. The first bump-bonded pixel detectors on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W. E-mail: william@physics.utoronto.ca; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G

    1999-11-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 {mu}m was observed, consistent with expectations given the detector pitch.

  6. The first bump-bonded pixel detectors on CVD diamond

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Fried, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Palmieri, V G; Pan, L S; Peitz, A; Pernicka, Manfred; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Steuerer, J; Stone, R; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Turchetta, R; Vittone, E; Wagner, A; Walsh, A M; Wedenig, R; Weilhammer, Peter; Zeuner, W; Ziock, H J; Zöller, M; Charles, E; Ciocio, A; Dao, K; Einsweiler, Kevin F; Fasching, D; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Milgrome, O; Palaio, N; Richardson, J; Sinervo, P K; Zizka, G

    1999-01-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98565544f the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 mu m was observed, consistent with expectations given the detector pitch. (13 refs).

  7. The first bump-bonded pixel detectors on CVD diamond

    International Nuclear Information System (INIS)

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch

  8. A Novel Optical Package for ATLAS Pixel Detector

    CERN Document Server

    Gan, K K

    2001-01-01

    An optical package of novel design has been developed for the ATLAS pixel detector. The package contains two VCSELs and one PIN diode to transmit and receive optical signals. The design is based on a simple connector-type concept and is made of radiation-hard material. Several packages have been fabricated and show promising results.

  9. Pixelated Single-crystal Diamond Detector for fast neutron measurements

    International Nuclear Information System (INIS)

    Single-crystal Diamond Detectors (SDDs), due to their high radiation hardness, fast response time and small size, are good candidates as fast neutron detectors in those environments where the high neutron flux is an issue, such as spallation neutron sources and the next generation thermonuclear fusion plasmas, i.e. the ITER experiment. Neutron detection in SDDs is based on the collection of electron-hole pairs produced by charged particles generated by neutron interactions with 12C. Recent measurements have demonstrated the SDD capability of measuring the neutron flux with a good energy resolution and at high rates. In this work a novel detector based on a 12-pixels SDD matrix will be presented. Each pixel is equipped with an independent electronic chain: the fast shaping preamplifier coupled to a digitizer is able to combine the high rate capability and the good energy resolution. Two CAEN digitizers are compared and the possibility of performing good energy resolution measurements (<2%) and at high rates (>1 MHz per channel) is described. Each pixel was characterized and calibrated using an 241Am source: the energy resolution was evaluated and gives a mean value of 1.73% at 5.5 MeV. The good energy resolution achieved and its uniformity between pixels are the demonstration of the capability of this novel detector as a spectrometer. This system will be installed during the next Deuterium-Tritium campaign on a collimated vertical line of sight at JET for 14 MeV neutron measurements

  10. Overview of the ATLAS Insertable B-Layer Pixel Detector

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2011-01-01

    ATLAS currently develops a new pixel detector for the first upgrade of its tracking system: The ATLAS Insertable B-Layer Pixel detector (IBL). The new layer will be inserted between the inner most layer of the current pixel detector and a new beam pipe. The sensors are placed at a radius of 3.4cm. The expected high radiation levels and high hit occupancy require new developments for front-end chip and the sensor which can stand radiation levels beyond 5E15 neq/cm2. ATLAS has developed the new FEI4 and new silicon sensors to be used as pixel modules. Furthermore a new lightweight support and cooling structure was developed, which minimizes the overall radiation and allows detector cooling with CO2 at -40C coolant temperature. Currently the overall integration and installation procedure is being developed and test ready for installation in ATLAS in 2013. The presentation summarizes the current state of development of IBL modules, first preliminary test results of the new chip with new sensors, the construction ...

  11. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  12. A Sealed Gas Pixel Detector for X-ray Astronomy

    OpenAIRE

    Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L; Brez, A.; Latronico, L; Omodei, N.; Razzano, M.; Massai, M. M.; Pinchera, M.; Pesce-Rollins, M.; SGRO, C.; Costa, E; P. Soffitta(a); Sipila, H.

    2006-01-01

    We report on the results of a new, sealed, Gas Pixel Detector. The very compact design and the absence of the gas flow system, make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high gain (>1000), fine pitch GEM that matches the...

  13. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    International Nuclear Information System (INIS)

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors

  14. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    CERN Document Server

    Turchetta, R

    2006-01-01

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors.

  15. Pixel hybrid photon detectors for the ring imaging Cherenkov detectors of LHCb

    CERN Document Server

    Somerville, L

    2005-01-01

    A Pixel Hybrid Photon Detector (pixel HPD) has been developed for the LHCb Ring Imaging Cherenkov (RICH) detectors. The pixel HPD is a vacuum tube with a multi-alkali photocathode, high-voltage cross- focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a CMOS readout chip; the readout chip is thus fully encapsulated in the device. The pixel HPD fulfils the stringent requirements for the RICH detectors of LHCb, combining single photon sensitivity, high signal-to-noise ratio and fast readout with an ~8cm diameter active area and an effective pixel size of 2.5mm 2.5mm at the photocathode. The performance and characteristics of two prototype pixel HPDs have been studied in laboratory measurements and in recent beam tests. The results of all measurements agree with expectations and fulfil the LHCb RICH requirements. In readiness for production of the ~500pixel HPDs for the RICH detectors, a test programme was designed and implemented to ensure component quality control at eac...

  16. Optical Links for the ATLAS Pixel Detector

    CERN Document Server

    Gregor, Ingrid-Maria

    In der vorliegenden Dissertation wird eine strahlentolerante optische Datenstrecke mit hoher Datenrate für den Einsatz in dem Hochenergiephysikexperiment Atlas am Lhc Beschleuniger entwickelt. Da die Lhc-Experimente extremen Strahlenbelastungen ausgesetzt sind, müssen die Komponenten spezielle Ansprüche hinsichtlich der Strahlentoleranz erfüllen. Die Qualifikation der einzelnen Bauteile wurde im Rahmen dieser Arbeit durchgeführt. Die zu erwartenden Fluenzen im Atlas Inner Detector für Silizium und Gallium Arsenid (GaAs) wurden berechnet. Siliziumbauteile werden einer Fluenz von bis zu 1.1.1015neq /cm2 in 1 MeV äquivalenten Neutronen ausgesetzt sein, wohingegen GaAs Bauteile bis zu 7.8.1015neq /cm2 ausgesetzt sein werden. Die Strahlentoleranz der einzelnen benötigten Komponenten wie z.B. der Laserdioden sowie der jeweiligen Treiberchips wurde untersucht. Sowohl die Photo- als auch die Laserdioden haben sich als strahlentolerant für die Fluenzen an dem vorgesehenen Radius erwiesen. Aus de...

  17. GaAs Medipix2 hybrid pixel detector

    CERN Document Server

    Kostamo, P; Vähänen, S; Tlustos, L; Fröjdh, C; Campbell, M; Zhilyaev, Y; Lipsanen, H

    2008-01-01

    A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.

  18. Compensation of radiation damages for SOI pixel detector via tunneling

    CERN Document Server

    Yamada, Miho; Kurachi, Ikuo

    2015-01-01

    We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionization damages (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and difficulty of handling. We studied compensation of TID effects by tunneling using a high-voltage. For decrease of trapped holes, applied high-voltage to buried p-well which is under oxide layer to inject the electrons into the oxide layer.In this report, recent progress of this study is shown.

  19. Sensor Development and Readout Prototyping for the STAR Pixel Detector

    Energy Technology Data Exchange (ETDEWEB)

    Greiner, L.; Anderssen, E.; Matis, H.S.; Ritter, H.G.; Stezelberger, T.; Szelezniak, M.; Sun, X.; Vu, C.; Wieman, H.

    2009-01-14

    The STAR experiment at the Relativistic Heavy Ion Collider (RHIC) is designing a new vertex detector. The purpose of this upgrade detector is to provide high resolution pointing to allow for the direct topological reconstruction of heavy flavor decays such as the D{sup 0} by finding vertices displaced from the collision vertex by greater than 60 microns. We are using Monolithic Active Pixel Sensor (MAPS) as the sensor technology and have a coupled sensor development and readout system plan that leads to a final detector with a <200 {micro}s integration time, 400 M pixels and a coverage of -1 < {eta} < 1. We present our coupled sensor and readout development plan and the status of the prototyping work that has been accomplished.

  20. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Rubinskiy, I

    2015-01-01

    Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

  1. Development of a counting pixel detector for 'Digitales Roentgen'

    International Nuclear Information System (INIS)

    The development of a single photon counting X-ray imaging detector for medical applications using hybrid pixel detectors is reported. The electronics development from the first prototype derived from detector development for particle physics experiments (ATLAS) to the imaging chip MPEC (multi picture element counters) for medical applications is described. This chip consists of 32 x 32 pixels of 200 μm x 200 μm size, each containing the complete read out electronics, i.e. an amplifier, two discriminators with adjustable thresholds and two 18-bit linear feedback shift-counters allowing energy windowing for contrast increase. Results on electronics performance are shown as well as measurements with several semiconductor materials (Si, GaAs, CdTe). Important aspects like detection efficiency, sensor homogeneity, linearity and spatial resolution are discussed. (orig.)

  2. Validation studies of the ATLAS pixel detector control system

    Energy Technology Data Exchange (ETDEWEB)

    Schultes, Joachim [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany)]. E-mail: schultes@physik.uni-wuppertal.de; Becks, Karl-Heinz [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Flick, Tobias [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Henss, Tobias [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Imhaeuser, Martin [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Kersten, Susanne [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Kind, Peter [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Lantzsch, Kerstin [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Maettig, Peter [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Reeves, Kendall [University of Wuppertal, Gaussstr. 20, 42097 Wuppertal (Germany); Weingarten, Jens [University of Bonn, Nussallee 12, 53115 Bonn (Germany)

    2006-09-01

    The ATLAS pixel detector consists of 1744 identical silicon pixel modules arranged in three barrel layers providing coverage for the central region, and three disk layers on either side of the primary interaction point providing coverage of the forward regions. Once deployed into the experiment, the detector will employ optical data transfer, with the requisite powering being provided by a complex system of commercial and custom-made power supplies. However, during normal performance and production tests in the laboratory, only single modules are operated and electrical readout is used. In addition, standard laboratory power supplies are used. In contrast to these normal tests, the data discussed here were obtained from a multi-module assembly which was powered and read out using production items: the optical data path, the final design power supply system using close to final services, and the Detector Control System (DCS)

  3. EFFECTIVENESS OF ELECTROSTATIC SHIELDING AND ELECTRONIC SUBTRACTION TO CORRECT FOR THE HOLE TRAPPING IN CDZNTE SEMICONDUCTOR DETECTORS.

    Energy Technology Data Exchange (ETDEWEB)

    BOLOTNIKOV,A.E.; CAMARDA, G.S.; HOSSAIN, A.; CUI, Y.; JAMES, R.B.

    2007-08-26

    CdZnTe (CZT) is a very promising material for nuclear-radiation detectors. CZT detectors operate at ambient temperatures and offer high detection efficiency and excellent energy resolution, placing them ahead of high-purity Ge for those applications where cryogenic cooling is problematic. The progress achieved in CZT detectors over the past decade is founded on the developments of robust detector designs and readout electronics, both of which helped to overcome the effects of carrier trapping. Because the holes have low mobility, only electrons can be used to generate signals in thick CZT detectors, so one must account for the variation of the output signal versus the locations of the interaction points. To obtain high spectral resolution, the detector's design should provide a means to eliminate this dependence throughout the entire volume of the device. In reality, the sensitive volume of any ionization detector invariably has two regions. In the first, adjacent to the collecting electrode, the amplitude of the output signal rapidly increases almost to its maximum as the interaction point is located farther from the anode; in the rest of the volume, the output signal remains nearly constant. Thus, the quality of CZT detector designs can be characterized based on the magnitude of the signals variations in the drift region and the ratio between the volumes of the driR and induction regions. The former determines the ''geometrical'' width of the photopeak i.e., the line width that affects the total energy resolution and is attributed to the device's geometry when all other factors are neglected. The latter determines the photopeak efficiency and the area under the continuum in the pulse-height spectra. In this work, we describe our findings from systematizing different designs of CZT detectors and evaluating their performance based on these two criteria.

  4. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors

    Science.gov (United States)

    Eisen, Y.; Shor, A.

    1998-02-01

    Among the semiconductor materials of a wide band gap, CdTe and CdZnTe have attracted most attention as room-temperature X-ray and gamma-ray detectors. Suitable CdTe materials for nuclear detectors and, in particular, for spectrometers, have been developed over the past few decades and are mainly grown via the traveling heater method (THM). However, the manufacture of large homogeneous ingots at relatively low cost has not reached yet a proven stage. Cd 1- xZn xTe (CZT) materials, mainly grown via the high-pressure Bridgman (HPB) technique, possess several advantages over CdTe and appear to better approach the practicality of providing large volume X-ray and gamma-ray detectors at moderate costs. Continuing effort is still underway to improve the characteristics of both CdTe and CZT materials in order to achieve reproducible detectors for either low- and high-energy gamma rays. This review paper is divided into three parts: The first part describes different structural designs of detectors to improve their spectroscopic characteristics. These include hemispherical detectors, coplanar strip-electrode detectors and monolithic, two-dimensional segmented electrode arrays with pad sizes smaller than their thickness. This part will also describe various electronic methods to compensate for the poor charge collection of holes. The second part compares the characteristics of planar CdTe and CZT nuclear detectors containing metal contacts. Characteristics include: charge collection efficiencies for both electrons and holes indicated by the mobility-lifetime product, energy resolutions, leakage currents and robustness in field use. The third part is devoted to field uses of these detectors. Those include: X-ray fluorescent spectrometers, large volume spectrometers and a new generation nuclear gamma camera for medical diagnostics based on room-temperature solid-state spectrometers.

  5. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  6. Hybrid Pixel Detector Development for the Linear Collider Vertex Tracker

    CERN Document Server

    Battaglia, Marco; Campagnolo, R; Caccia, M; Kucewicz, W; Jalocha, P; Palka, J; Zalewska-Bak, A

    2001-01-01

    In order to fully exploit the physics potential of the future high energy e+e- linear collider, a Vertex Tracker able to provide particle track extrapolation with very high resolution is needed. Hybrid Si pixel sensors are an attractive technology due to their fast read-out capabilities and radiation hardness. A novel pixel detector layout with interleaved cells has been developed to improve the single point resolution. Results of the characterisation of the first processed prototypes by electrostatic measurements and charge collection studies are discussed.

  7. High frame rate measurements of semiconductor pixel detector readout IC

    International Nuclear Information System (INIS)

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm×4 mm. Its main part is a matrix of 40×32 pixels with 100 μm×100 μm pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  8. High frame rate measurements of semiconductor pixel detector readout IC

    Science.gov (United States)

    Szczygiel, R.; Grybos, P.; Maj, P.

    2012-07-01

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm×4 mm. Its main part is a matrix of 40×32 pixels with 100 μm×100 μm pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  9. High frame rate measurements of semiconductor pixel detector readout IC

    Energy Technology Data Exchange (ETDEWEB)

    Szczygiel, R., E-mail: robert.szczygiel@agh.edu.pl [AGH University of Science and Technology, Department of Measurement and Instrumentation, Al. Mickiewicza 30, 30-059 Cracow (Poland); Grybos, P.; Maj, P. [AGH University of Science and Technology, Department of Measurement and Instrumentation, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2012-07-11

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm Multiplication-Sign 4 mm. Its main part is a matrix of 40 Multiplication-Sign 32 pixels with 100 {mu}m Multiplication-Sign 100 {mu}m pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  10. Silicon sensors for the upgrades of the CMS pixel detector

    International Nuclear Information System (INIS)

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.1034 cm-2s-1. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.1034 cm-2s-1. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.1034 cm-2s-1, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φeq=2.1016 cm-2 and a dose of ∼10 MGy after an integrated luminosity of 3000 fb-1. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip. The maximum rate experienced by the modules produced in Hamburg will be 120 MHz

  11. Silicon sensors for the upgrades of the CMS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo

    2015-12-15

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.10{sup 34} cm{sup -2}s{sup -1}. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.10{sup 34} cm{sup -2}s{sup -1}. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.10{sup 34} cm{sup -2}s{sup -1}, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φ{sub eq}=2.10{sup 16} cm{sup -2} and a dose of ∼10 MGy after an integrated luminosity of 3000 fb{sup -1}. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip

  12. Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

    Science.gov (United States)

    Bo, Gan; Tingcun, Wei; Wu, Gao; Yongcai, Hu

    2016-06-01

    In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. The readout channel is comprised of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 × 2.2 mm2. The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows: the overall gain of the readout channel is 210 V/pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e‑ at zero farad plus 8.2 e‑ per picofarad, and the power consumption is less than 2.4 mW/channel. Through the measurement together with a CdZnTe detector, the energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source 241Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad(Si). Project supported by the National Key Scientific Instrument and Equipment Development Project (No. 2011YQ040082), the National Natural Science Foundation of China (Nos. 11475136, 11575144, 61176094), and the Shaanxi Natural Science Foundation of China (No. 2015JM1016).

  13. Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.

    Science.gov (United States)

    Gu, Yaxu; Jie, Wanqi; Rong, Caicai; Xu, Lingyan; Xu, Yadong; Lv, Haoyan; Shen, Hao; Du, Guanghua; Guo, Na; Guo, Rongrong; Zha, Gangqiang; Wang, Tao; Xi, Shouzhi

    2016-09-01

    The influence of damage induced by 2MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3×10(11)p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50V to 400V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50V and 100V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects. PMID:27399802

  14. Pixel readout electronics development for the ALICE pixel vertex and LHCb RICH detector

    CERN Document Server

    Snoeys, W; Cantatore, E; Cencelli, V; Dinapoli, R; Heijne, Erik H M; Jarron, Pierre; Lamanna, P; Minervini, D; O'Shea, V; Quiquempoix, V; San Segundo-Bello, D; Van Koningsveld, B; Wyllie, Ken H

    2001-01-01

    The ALICE1LHCB pixel readout chip emerged from previous experience at CERN. The RD-19 collaboration provided the basis for the installation of a pixel system in the WA97 and NA57 experiments. Operation in these experiments was key in the understanding of the system issues. In parallel the RD-49 collaboration provided the basis to obtain radiation tolerance in commercial submicron CMOS through special circuit layout. The new ALICE1LMB chip was developed to serve two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these two experiments, the chip can be operated in two different modes. In tracking mode all the 50 mu m*435 mu m pixel cells in the 256*32 array are read out individually, whilst in particle identification mode they are combined in groups of 8 to form a 32*32 array of 400 mu m*425 mu m cells. The circuit is currently being manufactured in a commercial 0.25 mu m CMO...

  15. CMS Pixel Detector design for HL-LHC

    CERN Document Server

    Migliore, Ernesto

    2016-01-01

    The LHC machine is planning an upgrade program which will smoothly bring the luminosity to about 7.5$\\times$10$^{34}$cm$^{-2}$s$^{-1}$ in 2028, to possibly reach an integrated luminosity of 3000 fb$^{-1}$ by the end of 2037. This High Luminosity scenario, HL-LHC, will present new challenges in higher data rates and increased radiation.In order to maintain its physics reach the CMS Collaboration has undertaken a preparation program of the detector known as Phase-2 upgrade. The CMS Phase-2 Pixel upgrade will require a high bandwidth readout system and high radiation tolerance for sensors and on-detector ASICs. Several technologies for the upgrade sensors are being studied. Serial powering schemes are under consideration to accommodate significant constraints on the system. These prospective designs, as well as new layout geometries that include very forward pixel discs, will be presented together with performance estimations.

  16. Optimisation of ROB mapping for SCT and Pixel detectors

    CERN Document Server

    Wheeler, S

    1999-01-01

    A simple object-oriented program has been written to simulate the SCT and Pixel detectors in order to determine the suitability of various ROB mapping schemes in the context of the Level 2 trigger. Layer and tower mappings have been investigated separately for the SCT barrel and endcap and for the Pixel barrel and endcap. Events containing one RoI were fired at each detector part and the number of ROBs hit determined. As a result, plots of ROB output data rates and ROB hit frequency as a function of ROB ID were obtained. In general it was found that layer mapping schemes might result in unacceptably high data rates and frequencies. This result would have to be confirmed with more detailed modelling. The tower mappings investigated, in general produced acceptable rates.

  17. The ALICE Silicon Pixel Detector Control and Calibration Systems

    CERN Document Server

    Calì, Ivan Amos; Manzari, Vito; Stefanini, Giorgio

    2008-01-01

    The work presented in this thesis was carried out in the Silicon Pixel Detector (SPD) group of the ALICE experiment at the Large Hadron Collider (LHC). The SPD is the innermost part (two cylindrical layers of silicon pixel detec- tors) of the ALICE Inner Tracking System (ITS). During the last three years I have been strongly involved in the SPD hardware and software development, construction and commissioning. This thesis is focused on the design, development and commissioning of the SPD Control and Calibration Systems. I started this project from scratch. After a prototyping phase now a stable version of the control and calibration systems is operative. These systems allowed the detector sectors and half-barrels test, integration and commissioning as well as the SPD commissioning in the experiment. The integration of the systems with the ALICE Experiment Control System (ECS), DAQ and Trigger system has been accomplished and the SPD participated in the experimental December 2007 commissioning run. The complex...

  18. Monolithic active pixel radiation detector with shielding techniques

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  19. From vertex detectors to inner trackers with CMOS pixel sensors

    OpenAIRE

    Besson, A.; Pérez, A. Pérez; Spiriti, E.; Baudot, J.; Claus, G; Goffe, M.; de Winter, M.

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming ...

  20. Descent of the Silicon Pixel Detector (SPD) for ALICE Experiment

    CERN Multimedia

    2007-01-01

    The Silicon Pixel Detector (SPD) constitutes the two innermost layers of the ALICE Inner Tracking System (ITS) at radii of 3.9 cm and 7.6 cm, respectively. It is a fundamental element for the determination of the position of the primary vertex as well as for the measurement of the impact parameter of secondary tracks originating from the weak decays of strange, charm and beauty particles.

  1. Hexagonal pixel detector with time encoded binary readout

    International Nuclear Information System (INIS)

    The University of Hawaii is developing continuous acquisition pixel (CAP) detectors for vertexing applications in lepton colliding experiments such as SuperBelle or ILC. In parallel to the investigation of different technology options such as MAPS or SOI, both analog and binary readout concepts have been tested. First results with a binary readout scheme in which the hit information is time encoded by means of a signal shifting mechanism have recently been published. This paper explains the hit reconstruction for such a binary detector with an emphasis on fake hit reconstruction probabilities in order to evaluate the rate capability in a high background environment such as the planned SuperB factory at KEK. The results show that the binary concept is at least comparable to any analog readout strategy if not better in terms of occupancy. Furthermore, we present a completely new binary readout strategy in which the pixel cells are arranged in a hexagonal grid allowing the use of three independent output directions to reduce reconstruction ambiguities. The new concept uses the same signal shifting mechanism for time encoding, however, in dedicated transfer lines on the periphery of the detector, which enables higher shifting frequencies. Detailed Monte Carlo simulations of full size pixel matrices including hit and BG generation, signal generation, and data reconstruction show that by means of multiple signal transfer lines on the periphery the pixel can be made smaller (higher resolution), the number of output channels and the data volume per triggered event can be reduced dramatically, fake hit reconstruction is lowered to a minimum and the resulting effective occupancies are less than 10-4. A prototype detector has been designed in the AMS 0.35μm Opto process and is currently under fabrication.

  2. Pixel diamond detectors for excimer laser beam diagnostics

    Science.gov (United States)

    Girolami, M.; Allegrini, P.; Conte, G.; Salvatori, S.

    2011-05-01

    Laser beam profiling technology in the UV spectrum of light is evolving with the increase of excimer lasers and lamps applications, that span from lithography for VLSI circuits to eye surgery. The development of a beam-profiler, able to capture the excimer laser single pulse and process the acquired pixel current signals in the time period between each pulse, is mandatory for such applications. 1D and 2D array detectors have been realized on polycrystalline CVD diamond specimens. The fast diamond photoresponse, in the ns time regime, suggests the suitability of such devices for fine tuning feedback of high-power pulsed-laser cavities, whereas solar-blindness guarantees high performance in UV beam diagnostics, also under high intensity background illumination. Offering unique properties in terms of thermal conductivity and visible-light transparency, diamond represents one of the most suitable candidate for the detection of high-power UV laser emission. The relatively high resistivity of diamond in the dark has allowed the fabrication of photoconductive vertical pixel-detectors. A semitransparent light-receiving back-side contact has been used for detector biasing. Each pixel signal has been conditioned by a multi-channel read-out electronics made up of a high-sensitive integrator and a Σ-Δ A/D converter. The 500 μs conversion time has allowed a data acquisition rate up to 2 kSPS (Sample Per Second).

  3. Small-Scale Readout Systems Prototype for the STAR PIXEL Detector

    Energy Technology Data Exchange (ETDEWEB)

    Szelezniak, Michal A.; Besson, Auguste; Colledani, Claude; Dorokhov, Andrei; Dulinski, Wojciech; Greiner, Leo C.; Himmi, Abdelkader; Hu, Christine; Matis, Howard S.; Ritter, Hans Georg; Rose, Andrew; Shabetai, Alexandre; Stezelberger, Thorsten; Sun, Xiangming; Thomas, Jim H.; Valin, Isabelle; Vu, Chinh Q.; Wieman, Howard H.; Winter, Marc

    2008-10-01

    A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations ofMAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of three small MAPS sensors arranged in three parallel and coaxial planes with a readout system based on the readout architecture for PIXEL. This proposed readout architecture is simple and scales to the size required to readout the final detector. The real-time hit finding algorithm necessary for data rate reduction in the 400 million pixel detector is described, and aspects of the PIXEL system integration into the existing STAR framework are addressed. The complete system has been recently tested and shown to be fully functional.

  4. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    Science.gov (United States)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  5. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1-xZnxTe-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1-xZnxTe detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Pixel hybrid photon detector magnetic distortions characterization and compensation

    CERN Document Server

    Aglieri-Rinella, G; D'Ambrosio, Carmelo; Forty, Roger W; Gys, Thierry; Patel, Mitesh; Piedigrossi, Didier; Van Lysebetten, Ann

    2004-01-01

    The LHCb experiment requires positive kaon identification in the momentum range 2-100 GeV/c. This is provided by two ring imaging Cherenkov detectors. The stringent requirements on the photon detectors are fully satisfied by the novel pixel hybrid photon detector, HPD. The HPD is a vacuum tube with a quartz window, S20 photo-cathode, cross-focusing electron optics and a silicon anode encapsulated within the tube. The anode is a 32*256 pixels hybrid detector, with a silicon sensor bump-bonded onto a readout chip containing 8192 channels with analogue front-end and digital read-out circuitry. An external magnetic field influences the trajectory of the photoelectrons and could thereby degrade the inherent excellent space resolution of the HPD. The HPDs must be operational in the fringe magnetic field of the LHCb magnet. This paper reports on an extensive experimental characterization of the distortion effects. The characterization has allowed the development of parameterisations and of a compensation algorithm. ...

  7. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Rubinskiy, I

    2015-01-01

    A high resolution (σ∼2μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. The telescope consists of six monolithic active pixel sensor planes (Mimosa26) with a pixel pitch of 18.4 \\mu m and thinned down to 50 \\mu m. The excellent resolution, readout rate and DAQ integration capabilities made the telescope a primary test beam tool for many groups including several CERN based experiments. Within the European detector infrastructure project AIDA the test beam telescope is being further extended in terms of cooling and powering infrastructure, read-out speed, area of acceptance, and precision. In order to provide a system optimized for the different requirements by the user community a combination of various state-of-the-art pixel technologies is foreseen. Furthermore, new central dead-time-free trigger logic unit (TLU) has been developed to provide LHC-speed response with one-trigger-per-particle operating mode and a synchronous clock for all conn...

  8. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.;

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have...... the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even...... though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors....

  9. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    CERN Document Server

    Alipour Tehrani, Niloufar; Benoit, Mathieu; Dannheim, Dominik; Dette, Karola; Hynds, Daniel; Kulis, Szymon; Peric, Ivan; Petric, Marko; Redford, Sophie; Sicking, Eva; Valerio, Pierpaolo

    2015-01-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor. Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  10. Low energy polarization sensitivity of the Gas Pixel Detector

    CERN Document Server

    Muleri, F; Baldini, L; Bellazzini, R; Bregeon, J; Brez, A; Costa, E; Frutti, M; Latronico, L; Minuti, M; Negri, M B; Omodei, N; Pinchera, M; Pesce-Rollins, M; Razzano, M; Rubini, A; Sgro', C; Spandre, G

    2007-01-01

    An X-ray photoelectric polarimeter based on the Gas Pixel Detector has been proposed to be included in many upcoming space missions to fill the gap of about 30 years from the first (and to date only) positive measurement of polarized X-ray emission from an astrophysical source. The estimated sensitivity of the current prototype peaks at an energy of about 3 keV, but the lack of readily available polarized sources in this energy range has prevented the measurement of detector polarimetric performances. In this paper we present the measurement of the Gas Pixel Detector polarimetric sensitivity at energies of a few keV and the new, light, compact and transportable polarized source that was devised and built to this aim. Polarized photons are produced, from unpolarized radiation generated with an X-ray tube, by means of Bragg diffraction at nearly 45 degrees. The employment of mosaic graphite and flat aluminum crystals allow the production of nearly completely polarized photons at 2.6, 3.7 and 5.2 keV from the di...

  11. A Sealed Gas Pixel Detector for X-ray Astronomy

    CERN Document Server

    Bellazzini, R; Minuti, M; Baldini, L; Brez, A; Latronico, L; Omodei, N; Razzano, M; Massai, M M; Pinchera, M; Pesce-Rollins, M; Sgro, C; Costa, E; Soffitta, P; Sipilä, H; Lempinen, E

    2006-01-01

    We report on the results of a new, sealed, Gas Pixel Detector. The very compact design and the absence of the gas flow system, make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 micron wide, hexagonal cells). The device is able to simultaneously perform good imaging (50-60 micron), moderate spectroscopy (~15% at 6 keV) as well as fast, high rate timing in the 1-10keV range. Moreover, being truly 2D, it is non dispersive and does not require any rotation. The great improvement of sensitivity, at least two orders of magnitude with respect to traditional polarimeters (based on Bragg crystals or Thomson scattering), will allow ...

  12. Status of the CMS Phase I Pixel Detector Upgrade

    OpenAIRE

    Spannagel, Simon

    2015-01-01

    Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity of L = 2 x10^34 cm^-2s^-1 are likely to be reached before 2018 and probably significantly exceeded in the so-called Phase I period until 2022. At this higher luminosity and increased hit occupancies the current CMS pixel detector would be subject to severe dead time and inefficiencies introduced by limited buffers in the analog read-out chip and effects of radiat...

  13. Silicon pixel-detector R&D for CLIC

    CERN Document Server

    AUTHOR|(SzGeCERN)718101

    2016-01-01

    The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (∼ 0.2% X${}_0$ per layer for the vertex region and ∼ 1 % X${}_0$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ∼ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer trac...

  14. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

    International Nuclear Information System (INIS)

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  15. A DEPFET pixel system for the ILC vertex detector

    CERN Document Server

    Trimpl, M; Kohrs, R; Krüger, H; Lodomez, P; Reuen, L; Sandow, C; Toerne, E; Velthuis, J J; Wermes, N; Andricek, L; Moser, H G; Richter, R H; Lutz, Gerhard; Giesen, F; Fischer, P; Peric, I

    2006-01-01

    We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 pixel matrix and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6keV to 60keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.

  16. The pixel detector for the CMS phase-II upgrade

    CERN Document Server

    Dinardo, Mauro

    2015-01-01

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R\\&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000~fb$^{-1}$, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of $2\\times10^{16}$~1MeV~eq.n.~/~cm$^2$, or equivalently 10~MGy of radiation dose in silicon, at about 3~cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R\\&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R\\&D effort for the development of the readout chip in the 65~nm CMOS technology. Status, progresses, and prospects of the CMS R\\&D effort are presented and discussed in this article.

  17. The pixel detector for the CMS phase-II upgrade

    Science.gov (United States)

    Dinardo, M. E.

    2015-04-01

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb-1, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×1016 1 MeV eq.n. / cm2, or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R&D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R&D effort are presented and discussed in this article.

  18. The pixel detector for the CMS phase-II upgrade

    International Nuclear Information System (INIS)

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R and D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb−1, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×1016 1 MeV eq.n. / cm2, or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R and D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R and D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R and D effort are presented and discussed in this article

  19. Tests of the gated mode for Belle II pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Prinker, Eduard [Max-Planck-Institute for Physics, Munich (Germany); Collaboration: Belle II-Collaboration

    2015-07-01

    DEPFET pixel detectors offer intrinsic amplification and very high signal to noise ratio. They form an integral building block for the vertex detector system of the Belle II experiment, which will start data taking in the year 2017 at the SuperKEKB Collider in Japan. A special Test board (Hybrid4) is used, which contains a small version of the DEPFET sensor with a read-out (DCD) and a steering chip (Switcher) attached, both controlled by a field-programmable gate array (FPGA) as the central interface to the computer. In order to keep the luminosity of the collider constant over time, the particle bunch currents have to be topped off by injecting additional bunches at a rate of 50 Hz. The particles in the daughter bunches produce a high rate of background (noisy bunches) for a short period of time, saturating the occupancy of the sensor. Operating the DEPFET sensor in a Gated Mode allows preserving the signals from collisions of normal bunches while protecting the pixels from background signals of the passing noisy bunches. An overview of the Gated Mode and first results is presented.

  20. A 12-bit 1 MS/s SAR-ADC for multi-channel CdZnTe detectors

    International Nuclear Information System (INIS)

    This paper presents a low power, area-efficient and radiation-hardened 12-bit 1 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) for multi-channel CdZnTe (CZT) detector applications. In order to improve the SAR-ADC's accuracy, a novel comparator is proposed in which the offset voltage is self-calibrated and also a new architecture for the unit capacitor array is proposed to reduce the capacitance mismatches in the charge-redistribution DAC. The ability to radiation-harden the SAR-ADC is enhanced through circuit and layout design technologies. The prototype chip was fabricated using a TSMC 0.35 μm 2P4M CMOS process. At a 3.3/5 V power supply and a sampling rate of 1 MS/s, the proposed SAR-ADC achieves a peak signal to noise and distortion ratio (SINAD) of 67.64 dB and consumes only 10 mW power. The core of the prototype chip occupies an active area of 1180 × 1080 μm2. (paper)

  1. Novel electrode geometry to improve performance of CdZnTe detectors

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl

    1998-01-01

    A novel electrode geometry to improve the sensitivity to single-polarity charge carriers in ionization detectors is presented. The electrode geometry is based on the same principle as Frisch grids in gas detectors. It reduces the sensitivity to one type of charge carrier, making the detector almost...

  2. Simulation of gas mixture drift properties for GasPixel detector for modernization of ATLAS

    International Nuclear Information System (INIS)

    Results of simulation of gas mixture drift properties for GasPixel detector are presented. The properties of gaseous mixtures for the GasPixel detector have been studied in view of its use in high luminosity tracking applications for the ATLAS Inner Detector in a future super-LHC collider

  3. A sealed Gas Pixel Detector for X-ray astronomy

    International Nuclear Information System (INIS)

    We report on the results of a new, sealed Gas Pixel Detector. The very compact design and the absence of the gas flow system make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high-gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 μm wide, hexagonal cells). The device is able to simultaneously perform good imaging (50-60 μm), moderate spectroscopy (∼15% at 6 keV) as well as fast, high-rate timing in the 1-10 keV range. Moreover, being truly 2D, it is non-dispersive and does not require any rotation. The great improvement of sensitivity, at least two orders of magnitude with respect to traditional polarimeters (based on Bragg crystals or Thomson scattering), will allow the direct exploration of the most dramatic objects of the X-ray sky. At the focus of the large mirror area of the XEUS telescope it will be decisive in reaching many of the scientific goals of the mission. With integration times of the order of 1 day, polarimetry of Active Galactic Nuclei at the percent level will be possible, making for a real breakthrough in high-energy astrophysics

  4. A sealed Gas Pixel Detector for X-ray astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Bellazzini, R. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy)], E-mail: ronaldo.bellazzini@pi.infn.it; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Latronico, L.; Omodei, N. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Razzano, M.; Massai, M.M. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Dipartimento di Fisica, Universita di Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Pesce-Rollins, M.; Sgro, C. [INFN sez.Pisa, Largo B. Pontecorvo 3, I-56127 Pisa (Italy); Costa, Enrico; Soffitta, Paolo [Istituto di Astrofisica Spaziale e Fisica Cosmica, Via del Fosso del Cavaliere 100, I-00133, Roma (Italy); Sipila, H.; Lempinen, E. [Oxford Instruments Analytical Oy, Nihtisillankuja 5, FI-02631 Espoo (Finland)

    2007-09-01

    We report on the results of a new, sealed Gas Pixel Detector. The very compact design and the absence of the gas flow system make this detector substantially ready for use as focal plane detector for future X-ray space telescopes. The instrument brings high sensitivity to X-ray polarimetry, which is the last unexplored field of X-ray astronomy. It derives the polarization information from the track of the photoelectrons that are imaged by a high-gain (>1000), fine pitch GEM that matches the pitch of a pixel ASIC which is the collecting anode of the GPD (105k, 50 {mu}m wide, hexagonal cells). The device is able to simultaneously perform good imaging (50-60 {mu}m), moderate spectroscopy ({approx}15% at 6 keV) as well as fast, high-rate timing in the 1-10 keV range. Moreover, being truly 2D, it is non-dispersive and does not require any rotation. The great improvement of sensitivity, at least two orders of magnitude with respect to traditional polarimeters (based on Bragg crystals or Thomson scattering), will allow the direct exploration of the most dramatic objects of the X-ray sky. At the focus of the large mirror area of the XEUS telescope it will be decisive in reaching many of the scientific goals of the mission. With integration times of the order of 1 day, polarimetry of Active Galactic Nuclei at the percent level will be possible, making for a real breakthrough in high-energy astroph0011ysi.

  5. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mathes, Markus

    2008-12-15

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  6. Low-energy CZT detector array for the ASIM mission

    DEFF Research Database (Denmark)

    Cenkeramaddi, Linga Reddy; Genov, Georgi; Kohfeldt, Anja;

    2012-01-01

    In this article we introduce the low-energy CZT (CdZnTe) 16 384-pixel detector array on-board the Atmosphere Space Interaction Monitor (ASIM), funded by the European Space Agency. This detector is a part of the larger Modular X-and Gamma-ray sensor (MXGS). The CZT detector array is sensitive...

  7. Study of the spectrometric performances of monolithic CdZnTe / CdTe gamma ray detectors

    International Nuclear Information System (INIS)

    Pixelated monolithic CdTe/CdZnTe semiconductor gamma ray detectors are brought to replace scintillation detectors for medical applications, notably for single photon emission computed tomography (SPECT). In addition to compactness, they present better spectrometric performances: energy resolution, detection efficiency, and spatial resolution. Moreover, the photons depth of interaction in the crystal can be measured. This work aimed in studying experimentally and by simulation the correlations between anodes pitch, material physic properties (resistivity and electron transport properties), and detectors spectrometric performances. We have compared several methods of measuring the photon interaction depth, and have obtained an energy resolution ranging from 1.7% to 7% at 122 keV, according to material, for 5 mm thick detectors. Charge sharing between adjacent anodes has been studied and a measured data processing is proposed. (author)

  8. Development of CdZnTe X-ray detectors at DSRI

    DEFF Research Database (Denmark)

    van Pamelen, M.A.J.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

    2000-01-01

    at DSRI. With the advent of the Danish Micro Satellite program it was, however, recognised that this type of detector is very well suited for two proposed missions (eXCALIBur, AXO). The research at DSRI has so far been concentrated on the spectroscopic properties of the CZT detector. At DSRI we have...

  9. Towards a new generation of pixel detector readout chips

    International Nuclear Information System (INIS)

    The Medipix3 Collaboration has broken new ground in spectroscopic X-ray imaging and in single particle detection and tracking. This paper will review briefly the performance and limitations of the present generation of pixel detector readout chips developed by the Collaboration. Through Silicon Via technology has the potential to provide a significant improvement in the tile-ability and more flexibility in the choice of readout architecture. This has been explored in the context of 3 projects with CEA-LETI using Medipix3 and Timepix3 wafers. The next generation of chips will aim to provide improved spectroscopic imaging performance at rates compatible with human CT. It will also aim to provide full spectroscopic images with unprecedented energy and spatial resolution. Some of the opportunities and challenges posed by moving to a more dense CMOS process will be discussed

  10. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    Science.gov (United States)

    Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

    2016-07-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  11. Pixel Detector Trial Assembly Test in the SR1 building

    CERN Multimedia

    D. Giugni

    2004-01-01

    During the last two months the Pixel group [LBL, Milan and Wuppertal] made a successful integration test on the mechanics of the barrel. The scope of the test was to qualify the integration procedures and the various assembling tools. The test took place in the clean room of the SR1 building at CERN, where the detector has been assembled around a dummy beam pipe made of Stainless Steel. The process is rather complex: the shells come in two parts and they have to be clamped together to get the full shell. This operation is carried out by a dedicated tool which is shown to the right in the picture below. The layer 1 shell is clamped around a "service" pipe that will be used for moving the full layer to the integration tool [ITT] which is visible on the left. View of the tools devoted to the Pixel barrel integration in the SR1 building Also visible in the picture is the global frame that is actually held by the tool. It will engage the layers sliding onto the rails. The first two layers are sequentially...

  12. A generic readout environment for prototype pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Turqueti, Marcos, E-mail: turqueti@fnal.go [Fermi National Accelerator Laboratory, Kirk and Wilson Road, 60510-500 (United States); Rivera, Ryan; Prosser, Alan; Kwan, Simon [Fermi National Accelerator Laboratory, Kirk and Wilson Road, 60510-500 (United States)

    2010-11-01

    Pixel detectors for experimental particle physics research have been implemented with a variety of readout formats and potentially generate massive amounts of data. Examples include the PSI46 device for the Compact Muon Solenoid (CMS) experiment which implements an analog readout, the Fermilab FPIX2.1 device with a digital readout, and the Fermilab Vertically Integrated Pixel device. The Electronic Systems Engineering Department of the Computing Division at the Fermi National Accelerator Laboratory has developed a data acquisition system flexible and powerful enough to meet the various needs of these devices to support laboratory test bench as well as test beam applications. The system is called CAPTAN (Compact And Programmable daTa Acquisition Node) and is characterized by its flexibility, versatility and scalability by virtue of several key architectural features. These include a vertical bus that permits the user to stack multiple boards, a gigabit Ethernet link that permits high speed communications to the system and a core group of boards that provide specific processing and readout capabilities for the system. System software based on distributed computing techniques supports an expandable network of CAPTANs. In this paper, we describe the system architecture and give an overview of its capabilities.

  13. ATLAS pixel detector timing optimisation with the back of crate card of the optical pixel readout system

    Energy Technology Data Exchange (ETDEWEB)

    Flick, T; Gerlach, P; Reeves, K; Maettig, P [Department of Physics, Bergische Universitaet Wuppertal (Germany)

    2007-04-15

    As with all detector systems at the Large Hadron Collider (LHC), the assignment of data to the correct bunch crossing, where bunch crossings will be separated in time by 25 ns, is one of the challenges for the ATLAS pixel detector. This document explains how the detector system will accomplish this by describing the general strategy, its implementation, the optimisation of the parameters, and the results obtained during a combined testbeam of all ATLAS subdetectors.

  14. The CdZnTe detector in the measurement of mammographic x-ray spectra

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Satoshi; Imagawa, Kotaro [Osaka Univ., Graduate School of Medicine, Course of Health Sciences, Suita, Osaka (Japan); Matsumoto, Masao [Osaka Univ., School of Allied Health Sciences, Faculty of Medicine, Suita, Osaka (Japan)

    2001-09-01

    As a mammographic x-ray unit has geometrical restrictions, large detectors cannot be used in experiments. We employed a Cd{sub 0.9}Zn{sub 0.1}Te (CZT) detector as an x-ray spectrometer in this study. An excellent response of the CZT detector can be expected in mammographic energy range: the energy of x-rays is relatively low ({approx}35keV), and the main components of the x-rays are around 20keV in mammography. (author)

  15. CdTe and CdZnTe semiconductor gamma detectors equipped with ohmic contacts

    CERN Document Server

    Lachish, U

    1999-01-01

    Semiconductor gamma detectors, equipped with ohmic contacts, are uniform and fast response devices that are not sensitive to hole trapping. Gamma generated charges flow within the detector bulk towards the ohmic contacts, and induce additional charge flow from the contacts towards them. The additional flow stems from the fundamental principles of Poisson and the continuity equations. Electrons flow from the negative contacts towards the holes and recombine with them, therefore, they overcome hole trapping. The ohmic contact effect transforms the detector into a single carrier device. Good quality ohmic contact detectors are achieved from a crystal grown by standard methods, that initially has too many traps, by adjustment of the Fermi level position within the forbidden band. The device design and its principle of operation are discussed.

  16. Design and implementation of an expert system for the detector control systems of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    In the framework of this thesis an expert system ''Pixel-Advisor'' for the control system of the pixel detector was designed and implemented. This supports the operational personnel in the diagnosis and removal of possible problems, which are in connection with the detector control system and unburdens the few available DCS experts

  17. From vertex detectors to inner trackers with CMOS pixel sensors

    CERN Document Server

    Besson, A; Spiriti, E; Baudot, J; Claus, G; Goffe, M; Winter, M

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

  18. Novel Surface Preparation and Contacts for CdZnTe Nuclear Radiation Detectors Using Patterned Films of Semiconductors and Insulators

    Science.gov (United States)

    Burger, Arnold; Groza, Michael; Conway, Adam; Payne, Steve

    2013-04-01

    The semiconductor Cadmium Zinc Telluride (CZT) has emerged as the material of choice for room temperature detection of X-rays and gamma-rays. The detectors will cover the energy range from 30 keV to several MeV, and will achieve excellent 662 keV energy resolution. The development of high resolution gamma ray detectors based on CZT is dependent on low electronic noise levels. One common source of noise is the surface leakage current, which limits the performance of advanced readout schemes such as the coplanar grid and pixelated architectures with steering grids. Excessive bulk leakage current can result from one of several surface effects: leaky native oxides, unsatisfied bonds, and surface damage. We propose to fabricate and test oriented [111] CZT crystals with thicknesses up to 1.5 cm with an innovative detection technique based on co-planar or other electron only transport designs using plasma processing, thin film sputtering, chemical passivation and wet etching techniques. Compared to conventional pixel detectors, the proposed contact configuration needs lower power consumption and a lower cost. The detector design can be used for building very low-cost handheld radiation detection devices.

  19. Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

    International Nuclear Information System (INIS)

    Full text: There is a growing need for large area X-and Gamma radiation detectors for penetrating radiations in various fields of application e.g. astronomy, detectors for nuclear medicine, biosensor materials, security, non-proliferation of hazardous materials, and environmental applications etc. Direct X-rays conversion into electric charges in a semiconductor is envisaged with better spectroscopic characteristics to improve contrast and quantitative measurements compared to indirect detection using scintillators. The family of II-VI semiconductor materials combine a range of excellent properties such as their high sensitivity due to the high mobility-lifetime products, their high energy resolution as a consequence of the electron-hole pair formation energy, their reasonable maturity in terms of microelectronic technologies required for commercial detector fabrication, wide range of stopping power and band-gaps available. In particular, CdTe and CdxZn1-xTe (CZT) with Zn=0.1 offer a favorable combination of physical and chemical properties that makes it attractive as a room temperature X-ray detector material of choice for many applications involving photon energies up to several hundreds of keV. From the scientific experience accumulated in the past years, the detector properties are strongly dependent on a series of parameters which must be strictly controlled during crystal growth, such as the homogeneity, stoichiometry and the related intrinsic defects which appear during the material growth, a high mobility-lifetime for electron and holes is mandatory etc. Production of detector-grade CdTe and CdZnTe on industrial scale is still a challenge and optimal growth methods and growth conditions have been under intensive investigation. Progress in crystal growth and characterization achieved in a project of Institute partnership between Charles University in Prague and University of Freiburg, Germany which was sponsored by Alexander von Humboldt Foundation, will be

  20. Charge Sharing Effect on 600 {\\mu}m Pitch Pixelated CZT Detector for Imaging Applications

    CERN Document Server

    Yin, Yongzhi; Xu, Dapeng; Chen, Ximeng

    2013-01-01

    We are currently investigating the spatial resolution of highly pixelated Cadmium Zinc Telluride (CZT) detector for imaging applications. A 20 mm {\\times} 20 mm {\\times} 5 mm CZT substrate was fabricated with 600 {\\mu}m pitch pixels (500 {\\mu}m anode pixels with 100 {\\mu}m gap) and coplanar cathode. Charge sharing between two pixels was studied using collimated 122 keV gamma ray source. Experiments show a resolution of 125 {\\mu}m FWHM for double-pixel charge sharing events when the 600 {\\mu}m pixelated and 5 mm thick CZT detector biased at -1000 V. In addition, we analyzed the energy response of the 600 {\\mu}m pitch pixelated CZT detector.

  1. Electrode Design of Cylindrical Coplanar-grid CdZnTe Detector by Finite Element Methods

    Institute of Scientific and Technical Information of China (English)

    JIN Wei; SANG Wen-bin; ZHANG Qi; MIN Jia-Hua; SHEN Yan

    2004-01-01

    Cylindrical coplanar- grid configurations, which offer a lot of advantages over established designs,can effectively overcome the problem of poor hole collection. Finite element analysis is utilized for simulating the potential distribution of the cylindrical coplanar-grid detector under different models by varying the widths of grid and pitch of electrodes. In addition, a modified grid pattern has been discussed to improve the weighting potential match between two grids. In this way, the geometry of electrodes for cylindrical coplanar- grid detectors is optimized.

  2. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    Science.gov (United States)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  3. Characterisation of vapour phase grown CdTe and (Cd,Zn)Te for detector applications

    CERN Document Server

    Fiederle, M; Rogalla, M; Meinhardt, J; Ludwig, J; Runge, K; Benz, W

    1999-01-01

    The growth of CdTe from the vapour phase offers several improvements in crystal quality and homogeneity. CdTe and (Cd, Zn)Te were grown by the modified Markov technique. The transport properties and the detector performance are given and compared to melt grown material. (author)

  4. Display of cosmic ray event going through the pixel detector taken on October 18th 2008

    CERN Multimedia

    ATLAS, Experiment

    2014-01-01

    Shown are the XY view (of SCT and pixels and of pixels alone) and an RZ view. The track has a hit in each of the layers in both the upper and the lower hemisphere. In the bottom of L0 there are even two hits due to a module overlap. Apart from the signal hits there is only one other hit in the pixel detector demonstrating the very low noise level in the detector.

  5. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  6. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    Dobos, Daniel; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  7. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    Science.gov (United States)

    Dobos, Daniel

    2016-07-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to the surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer, a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  8. Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

    CERN Document Server

    Mathes, Markus

    2008-01-01

    Abstract: Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge c...

  9. Status and future of the ATLAS Pixel Detector at the LHC

    International Nuclear Information System (INIS)

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of disks in each forward end-cap. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-on-n silicon substrates. Intensive calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. The record breaking instantaneous luminosities of 7.7×1033cm−2s−1 recently surpassed at the LHC generated a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulated, the first effects of radiation damage became observable in the silicon sensors as an increase in the silicon leakage current and the change of the voltage required to fully deplete the sensor. A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014) together with the replacement of pixel services. A letter of intent was submitted for a completely new Pixel Detector after 2023, capable to take data with extremely high leveled luminosities of 5×1034cm−2s−1 at the high luminosity LHC. -- Highlights: •The ATLAS Pixel Detector provides hermetic coverage with three layers with 80 million pixels. •Calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. •First effects of radiation damage became observable in the silicon sensors. •A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014). •Replacement of pixel services in 2013–2014. •A letter of intent was submitted for new Pixel Detector after 2023 for high luminosity LHC

  10. Multichannel CdZnTe gamma ray spectrometer

    Science.gov (United States)

    Doty, F. P.; Lingren, C. L.; Apotovsky, B. A.; Brunsch, J.; Butler, J. F.; Collins, T.; Conwell, R. L.; Friesenhahn, S.; Gormley, J.; Pi, B.; Zhao, S.; Augustine, F. L.; Bennett, B. A.; Cross, E.; James, R. B.

    1999-02-01

    A 3 cm 3 multichannel gamma spectrometer for DOE applications is under development by Digirad Corporation. The device is based on a position sensitive detector packaged in a compact multi-chip module (MCM) with integrated readout circuitry. The modular, multichannel design will enable identification and quantitative analysis of radionuclides in extended sources, or sources containing low levels of activity. The MCM approach has the advantages that the modules are designed for imaging applications, and the sensitivity can be arbitrarily increased by increasing the number of pixels, i.e. adding modules to the instrument. For a high sensitivity probe, the outputs for each pixel can be corrected for gain and offset variations, and summed digitally. Single pixel results obtained with discrete low noise readout indicate energy resolution of 3 keV can be approached with currently available CdZnTe. The energy resolution demonstrated to date with MCMs for 511 keV gamma rays is 10 keV.

  11. CdTe and CdZnTe detectors in nuclear medicine

    CERN Document Server

    Scheiber, C

    2000-01-01

    Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

  12. Optical Readout in a Multi-Module System Test for the ATLAS Pixel Detector

    CERN Document Server

    Flick, T; Gerlach, P; Kersten, S; Mättig, P; Kirichu, S N; Reeves, K; Richter, J; Schultes, J; Flick, Tobias; Becks, Karl-Heinz; Gerlach, Peter; Kersten, Susanne; Maettig, Peter; Kirichu, Simon Nderitu; Reeves, Kendall; Richter, Jennifer; Schultes, Joachim

    2006-01-01

    The innermost part of the ATLAS experiment at the LHC, CERN, will be a pixel detector. The command messages and the readout data of the detector are transmitted over an optical data path. The readout chain consists of many components which are produced at several locations around the world, and must work together in the pixel detector. To verify that these parts are working together as expected a system test has been built up. In this paper the system test setup and the operation of the readout chain is described. Also, some results of tests using the final pixel detector readout chain are given.

  13. Small-Scale Readout System Prototype for the STAR PIXEL Detector

    Energy Technology Data Exchange (ETDEWEB)

    Szelezniak, Michal; Anderssen, Eric; Greiner, Leo; Matis, Howard; Ritter, Hans Georg; Stezelberger, Thorsten; Sun, Xiangming; Thomas, James; Vu, Chinh; Wieman, Howard

    2008-10-10

    Development and prototyping efforts directed towards construction of a new vertex detector for the STAR experiment at the RHIC accelerator at BNL are presented. This new detector will extend the physics range of STAR by allowing for precision measurements of yields and spectra of particles containing heavy quarks. The innermost central part of the new detector is a high resolution pixel-type detector (PIXEL). PIXEL requirements are discussed as well as a conceptual mechanical design, a sensor development path, and a detector readout architecture. Selected progress with sensor prototypes dedicated to the PIXEL detector is summarized and the approach chosen for the readout system architecture validated in tests of hardware prototypes is discussed.

  14. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  15. Performance Studies of Pixel Hybrid Photon Detectors for the LHCb RICH Counters

    CERN Document Server

    Aglieri Rinella, G; Piedigrossi, D; Van Lysebetten, A

    2004-01-01

    The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

  16. Performance studies of pixel hybrid photon detectors for the LHCb RICH counters

    CERN Document Server

    Aglieri-Rinella, G; Piedigrossi, D; Van Lysebetten, A

    2006-01-01

    The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

  17. The upgraded Pixel Detector of the ATLAS Experiment for Run 2 at the Large Hadron Collider

    Science.gov (United States)

    Backhaus, M.

    2016-09-01

    During Run 1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This included the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally, a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore, a new readout chip and two new sensor technologies (planar and 3D) are used in the IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanical support and a CO2 based cooling system. This paper describes the improvements achieved during the maintenance of the existing Pixel Detector as well as the performance of the IBL during the construction and commissioning phase. Additionally, first results obtained during the LHC Run 2 demonstrating the distinguished tracking performance of the new Four Layer ATLAS Pixel Detector are presented.

  18. Pixel readout electronics development for the ALICE pixel vertex and LHCb RICH detector

    NARCIS (Netherlands)

    Snoeys, W.; Campbell, M.; Cantatore, E.; Cencelli, V.; Dinapoli, R.; Heijne, E.; Jarron, P.; Lamanna, P.; Minervini, D.; O'Shea, V.; Quiquempoix, V.; San Segundo Bello, D.; Koningsveld, van B.; Wyllie, K.

    2001-01-01

    The ALICE1LHCB pixel readout chip emerged from previous experience at CERN. The RD-19 collaboration provided the basis for the installation of a pixel system in the WA97 and NA57 experiments. Operation in these experiments was key in the understanding of the system issues. In parallel the RD-49 coll

  19. Final Report: A CdZnTe detector for MRI-compatible SPECT Systems

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Ling-Jian

    2012-12-27

    The key objective of this project is to develop the enabling technology for future MRI-compatible nuclear (e.g. SPECT) imaging system, and to demonstrate the feasibility of performing simultaneous MR and SPECT imaging studies of the same object. During the past three years, we have developed (a) a MRI-compatible ultrahigh resolution gamma ray detector and associated readout electronics, (b) a theoretical approach for modeling the effect of strong magnetic field on SPECT image quality, and (c) a maximum-likelihood (ML) based reconstruction routine with correction for the MR-induced distortion. With this support, we have also constructed a four-head MR-compatible SPECT system and tested the system inside a 3-T clinical MR-scanner located on UI campus. The experimental results obtained with this system have clearly demonstrated that sub-500um spatial resolution can be achieved with a SPECT system operated inside a 3-T MRI scanner. During the past three years, we have accomplished most of the major objectives outlined in the original proposal. These research efforts have laid out a solid foundation the development of future MR-compatible SPECT systems for both pre-clinical and clinical imaging applications.

  20. Improved CdZnTe detectors grown by vertical Bridgman process

    International Nuclear Information System (INIS)

    The γ ray (57Co) and α particle (241Am) detector response of Cd1-xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Post-growth processing was utilized to produce a high-resistivity material with improved charge-collection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the low-energy tailing of the γ-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV γ-photon line in crystals with x = 0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from 57Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise

  1. Commissioning and Operation of the ATLAS Pixel Detector at the CERN LHC Collider

    CERN Document Server

    Djama, F; The ATLAS collaboration

    2010-01-01

    Physics program at the CERN LHC collider started in autumn 2009. Since then, LHC daily delivers collisions between its two proton beams. This talk was devoted to the commissioning and early operation of the ATLAS Pixel Detector. The Pixel Detector is working nicely and all the required performances like efficiency, resolution and low noise were met. The fraction of working modules is as high as 97.4 %. The Pixel Detector fully participates in the reconstruction of charged particles trajectories, and is a key element in finding primary and secondary verticies and in tagging of short-lived particles.

  2. Modeling Inter-Pixel Crosstalk in Teledyne Imaging Sensors H4RG Detectors

    CERN Document Server

    Dudik, R P; Dorland, B N; Veillette, D; Waczynski, A; Lane, B; Loose, M; Kan, E; Waterman, J; Pravdo, S

    2012-01-01

    CMOS-hybrid arrays have recently surfaced as competitive optical detectors for use in ground- and space-based astronomy. One source of error in these detectors that does not appear in more traditional CCD arrays is the inter-pixel capacitance component of crosstalk. In this paper we use a single pixel reset method to model inter-pixel capacitance (IPC). We combine this IPC model with a model for charge diffusion to estimate the total crosstalk on H4RG arrays. Finally, we compare our model results to Fe55 data obtained using an astrometric camera built to test the H4RG-B0 generation detectors.

  3. Signal and noise of diamond pixel detectors at high radiation fluences

    Science.gov (United States)

    Tsung, J.-W.; Havranek, M.; Hügging, F.; Kagan, H.; Krüger, H.; Wermes, N.

    2012-09-01

    CVD diamond is an attractive material option for LHC vertex detectors mainly because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 1015 neq cm-2, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design and performance, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path λe/h of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 1015 particles cm-2, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors.

  4. Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure

    Science.gov (United States)

    Tohyama, Shigeru; Sasaki, Tokuhito; Endoh, Tsutomu; Sano, Masahiko; Kato, Koji; Kurashina, Seiji; Miyoshi, Masaru; Yamazaki, Takao; Ueno, Munetaka; Katayama, Haruyoshi; Imai, Tadashi

    2013-12-01

    An uncooled infrared (IR) focal plane array (FPA) with 23.5 μm pixel pitch has been successfully demonstrated and has found wide commercial applications in the areas of thermography, security cameras, and other applications. One of the key issues for uncooled IRFPA technology is to shrink the pixel pitch because the size of the pixel pitch determines the overall size of the FPA, which, in turn, determines the cost of the IR camera products. This paper proposes an innovative pixel structure with a diaphragm and beams placed in different levels to realize an uncooled IRFPA with smaller pixel pitch (≦17 μm). The upper level consists of a diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to be placed on the adjacent pixels. The test devices of this pixel design with 12, 15, and 17 μm pitch have been fabricated on the Si read-out integrated circuit (ROIC) of quarter video graphics array (QVGA) (320×240) with 23.5 μm pitch. Their performances are nearly equal to those of the IRFPA with 23.5 μm pitch. For example, a noise equivalent temperature difference of 12 μm pixel is 63.1 mK for F/1 optics with the thermal time constant of 14.5 ms. Then, the proposed structure is shown to be effective for the existing IRFPA with 23.5 μm pitch because of the improvements in IR sensitivity. Furthermore, the advanced pixel structure that has the beams composed of two levels are demonstrated to be realizable.

  5. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  6. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Manolopoulos, S.; Bates, R.; Campbell, M.; Snoeys, W.; Heijne, E.; Pernigotti, E.; Raine, C.; Smith, K. E-mail: k.smith@physics.gla.ac.uk; Watt, J.; O' Shea, V.; Ludwig, J.; Schwarz, C

    1999-09-11

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the {omega}3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  7. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

    2002-01-01

    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  8. X-CSIT: a toolkit for simulating 2D pixel detectors

    CERN Document Server

    Joy, Ashley; Hauf, Steffen; Kuster, Markus; Rüter, Tonn

    2015-01-01

    A new, modular toolkit for creating simulations of 2D X-ray pixel detectors, X-CSIT (X-ray Camera SImulation Toolkit), is being developed. The toolkit uses three sequential simulations of detector processes which model photon interactions, electron charge cloud spreading with a high charge density plasma model and common electronic components used in detector readout. In addition, because of the wide variety in pixel detector design, X-CSIT has been designed as a modular platform so that existing functions can be modified or additional functionality added if the specific design of a detector demands it. X-CSIT will be used to create simulations of the detectors at the European XFEL, including three bespoke 2D detectors: the Adaptive Gain Integrating Pixel Detector (AGIPD), Large Pixel Detector (LPD) and DePFET Sensor with Signal Compression (DSSC). These simulations will be used by the detector group at the European XFEL for detector characterisation and calibration. For this purpose, X-CSIT has been integrat...

  9. Efficient phase contrast imaging in STEM using a pixelated detector. Part II: Optimisation of imaging conditions

    International Nuclear Information System (INIS)

    In Part I of this series of two papers, we demonstrated the formation of a high efficiency phase-contrast image at atomic resolution using a pixelated detector in the scanning transmission electron microscope (STEM) with ptychography. In this paper we explore the technique more quantitatively using theory and simulations. Compared to other STEM phase contrast modes including annular bright field (ABF) and differential phase contrast (DPC), we show that the ptychographic phase reconstruction method using pixelated detectors offers the highest contrast transfer efficiency and superior low dose performance. Applying the ptychographic reconstruction method to DPC segmented detectors also improves the detector contrast transfer and results in less noisy images than DPC images formed using difference signals. We also find that using a minimum array of 16×16 pixels is sufficient to provide the highest signal-to-noise ratio (SNR) for imaging beam sensitive weak phase objects. Finally, the convergence angle can be adjusted to enhance the contrast transfer based on the spatial frequencies of the specimen under study. - Highlights: • High efficiency phase contrast transfer function (PCTF) can be achieved using pixelated detectors followed by a ptychographic reconstruction. • Ptychographic reconstruction offers the highest PCTF across the entire spatial frequency range compared to DPC and ABF. • Image simulations show that a ptychographic reconstruction using pixelated detectors offers a superior low dose performance for imaging weak phase objects. • Optimisation of imaging conditions using pixelated detectors are discussed by considering the contrast transfer function for various cases

  10. The Upgraded Pixel Detector of the ATLAS Experiment for Run-2

    CERN Document Server

    Ferrere, Didier; The ATLAS collaboration

    2016-01-01

    Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented, using collision data.

  11. The upgraded Pixel Detector of the ATLAS experiment for Run-2 at the Large Hadron Collider

    CERN Document Server

    Giordani, MarioPaolo; The ATLAS collaboration

    2016-01-01

    Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented, using collision data.

  12. Efficient phase contrast imaging in STEM using a pixelated detector. Part II: Optimisation of imaging conditions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hao, E-mail: hao.yang@materials.ox.ac.uk [University of Oxford, Department of Materials. Parks Rd, Oxford OX1 3PH (United Kingdom); Pennycook, Timothy J.; Nellist, Peter D. [University of Oxford, Department of Materials. Parks Rd, Oxford OX1 3PH (United Kingdom); EPSRC SuperSTEM Facility, Daresbury Laboratory, WA4 4AD (United Kingdom)

    2015-04-15

    In Part I of this series of two papers, we demonstrated the formation of a high efficiency phase-contrast image at atomic resolution using a pixelated detector in the scanning transmission electron microscope (STEM) with ptychography. In this paper we explore the technique more quantitatively using theory and simulations. Compared to other STEM phase contrast modes including annular bright field (ABF) and differential phase contrast (DPC), we show that the ptychographic phase reconstruction method using pixelated detectors offers the highest contrast transfer efficiency and superior low dose performance. Applying the ptychographic reconstruction method to DPC segmented detectors also improves the detector contrast transfer and results in less noisy images than DPC images formed using difference signals. We also find that using a minimum array of 16×16 pixels is sufficient to provide the highest signal-to-noise ratio (SNR) for imaging beam sensitive weak phase objects. Finally, the convergence angle can be adjusted to enhance the contrast transfer based on the spatial frequencies of the specimen under study. - Highlights: • High efficiency phase contrast transfer function (PCTF) can be achieved using pixelated detectors followed by a ptychographic reconstruction. • Ptychographic reconstruction offers the highest PCTF across the entire spatial frequency range compared to DPC and ABF. • Image simulations show that a ptychographic reconstruction using pixelated detectors offers a superior low dose performance for imaging weak phase objects. • Optimisation of imaging conditions using pixelated detectors are discussed by considering the contrast transfer function for various cases.

  13. Si and CdTe pixel detector developments at SPring-8

    International Nuclear Information System (INIS)

    Single X-ray photon counting pixel detectors have become the most advanced detector technology in synchrotron radiation experiments recently. In particular, the PILATUS detector based on a silicon sensor has reached a very mature state and represents the world's largest detector in this field. This paper first reports on threshold energy calibrations and the capability of applying an energy-resolved X-ray imaging with PILATUS. Second the design of a cadmium telluride (CdTe) pixel detector is described. A high density and high-atomic number sensor material is required in high energy X-ray applications available at SPring-8. For this purpose we are developing a CdTe pixel detector with the SP8-01 readout ASIC covering a wide dynamic range between 10 and 100 keV and containing lower and upper discriminators.

  14. Optimization of CZT Detectors with Sub-mm Pixel Pitches Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop and optimize 0.5 cm thick Cadmium Zinc Telluride (CZT) detectors with very small pixel pitches, i.e. 350 micron and 600 micron. The proposed...

  15. 320x240 GaAs pixel detectors with improved X-ray imaging quality

    Energy Technology Data Exchange (ETDEWEB)

    Irsigler, R.; Andersson, J.; Alverbro, J.; Fakoor-Biniaz, Z.; Froejdh, C.; Helander, P.; Martijn, H.; Meikle, D.; Oestlund, M.; O' Shea, V.; Smith, K

    2001-03-11

    We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320x240 square-shaped pixels with a pitch of 38 {mu}m. The GaAs pixel detectors are based on semi-insulating and VPE grown substrates. The ROIC operates in the charge integration mode and provides snapshot as well as real time video images. Previously we have reported that the image quality of semi-insulating GaAs pixel detectors suffer from local variations in X-ray sensitivity. We have now developed a method to compensate for the sensitivity variations by applying suitable offset and gain corrections. The improvement in image quality is demonstrated in the measured signal-to-noise ratio of flood exposure images.

  16. 320x240 GaAs pixel detectors with improved X-ray imaging quality

    International Nuclear Information System (INIS)

    We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320x240 square-shaped pixels with a pitch of 38 μm. The GaAs pixel detectors are based on semi-insulating and VPE grown substrates. The ROIC operates in the charge integration mode and provides snapshot as well as real time video images. Previously we have reported that the image quality of semi-insulating GaAs pixel detectors suffer from local variations in X-ray sensitivity. We have now developed a method to compensate for the sensitivity variations by applying suitable offset and gain corrections. The improvement in image quality is demonstrated in the measured signal-to-noise ratio of flood exposure images

  17. Performance study of new pixel hybrid photon detector prototypes for the LHCb RICH counters

    CERN Document Server

    Moritz, M; Allebone, L; Campbell, M; Gys, Thierry; Newby, C; Pickford, A; Piedigrossi, D; Wyllie, K

    2004-01-01

    A pixel Hybrid Photon Detector was developed according to the specific requirements of the LHCb ring imaging Cerenkov counters. This detector comprises a silicon pixel detector bump-bonded to a binary readout chip to achieve a 25 ns fast readout and a high signal-to-noise ratio. The detector performance was characterized by varying the pixel threshold, the tube high voltage, the silicon bias voltage and by the determination of the photoelectron detection efficiency. Furthermore accelerated aging and high pixel occupancy tests were performed to verify the long term stability. The results were obtained using Cerenkov light and a fast pulsed light emitting diode. All measurements results are within the expectations and fulfill the design goals. (8 refs).

  18. Accessing photon bunching with photon number resolving multi-pixel detector

    OpenAIRE

    Kalashnikov, Dmitry A.; Tan, Si-Hui; Chekhova, Maria V.; Krivitsky, Leonid A.

    2010-01-01

    In quantum optics and its applications, there is an urgent demand for photon-number resolving detectors. Recently, there appeared multi-pixel detectors (MPPC) that are able to distinguish between 1,2,..10 photons. At the same time, strong coupling between different pixels (cross-talk) hinders their photon-number resolution. In this work, we suggest a method for `filtering out' the cross-talk effect in the measurement of intensity correlation functions.

  19. Modular pixelated detector system with the spectroscopic capability and fast parallel read-out

    OpenAIRE

    Vavřík, D. (Daniel); Holík, M.; Jakůbek, J; Jakůbek, M.; Kraus, V.; Krejčí, F.; Soukup, P. (Pavel); Tureček, D.; Vacík, J. (Jiří); Žemlička, J.

    2014-01-01

    A modular pixelated detector system was developed for imaging applications, where spectroscopic analysis of detected particles is advantageous e.g. for energy sensitive X-ray radiography, fluorescent and high resolution neutron imaging etc. The presented system consists of an arbitrary number of independent versatile modules. Each module is equipped with pixelated edgeless detector with spectroscopic ability and has its own fast read-out electronics. Design of the modules allows assembly of v...

  20. Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

    Science.gov (United States)

    Kalliopuska, Juha; Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula

    2011-08-01

    VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ˜90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

  1. Digital column readout architectures for hybrid pixel detector readout chips

    CERN Document Server

    Poikela, T; Westerlund, T; Buytaert, J; Campbell, M; De Gaspari, M; Llopart, X; Wyllie, K; Gromov, V; Kluit, R; van Beuzekom, M; Zappon, F; Zivkovic, V; Brezina, C; Desch, K; Fu, Y; Kruth, A

    2014-01-01

    In this paper, two digital column architectures suitable for sparse readout of data from a pixel matrix in trigger-less applications are presented. Each architecture reads out a pixel matrix of 256 x 256 pixels with a pixel pitch of 55 µm. The first architecture has been implemented in the Timepix3 chip, and this is presented together with initial measurements. Simulation results and measured data are compared. The second architecture has been designed for Velopix, a readout chip planned for the LHCb VELO upgrade. Unlike Timepix3, this has to be tolerant to radiation-induced single-event effects. Results from post-layout simulations are shown with the circuit architectures.

  2. Investigation of photon counting pixel detectors for X-ray spectroscopy and imaging

    International Nuclear Information System (INIS)

    The Medipix2 and Medipix3 detectors are hybrid pixelated photon counting detectors with a pixel pitch of 55 μm. The sensor material used in this thesis was silicon. Because of their small pixel size they suffer from charge sharing i.e. an incoming photon can be registered by more than one pixel. In order to correct for charge sharing due to lateral diffusion of charge carriers, the Medipix3 detector was developed: with its Charge Summing Mode, the charge collected in a cluster of 2 x 2 pixel is added up and attributed to only one pixel whose counter is incremented. The adjustable threshold of the detectors allows to count the photons and to gain information on their energy. The main purposes of the thesis are to investigate spectral and imaging properties of pixelated photon counting detectors from the Medipix family such as Medipix2 and Medipix3. The investigations are based on simulations and measurements. In order to investigate the spectral properties of the detectors measurements were performed using fluorescence lines of materials such as molybdenum, silver but also some radioactive sources such as Am-241 or Cd-109. From the measured data, parameters like the threshold dispersion and the gain variation from pixel-to-pixel were extracted and used as input in the Monte Carlo code ROSI to model the responses of the detector to monoenergetic photons. The measured data are well described by the simulations for Medipix2 and for Medipix3 operating in Charge Summing Mode. Due to charge sharing and due to the energy dependence of attenuation processes in silicon and to Compton scattering the incoming and the measured spectrum differ substantially from each other. Since the responses to monoenergetic photons are known, a deconvolution was performed to determine the true incoming spectrum. Several direct and iterative methods were successfully applied on measured and simulated data of an X-ray tube and radioactive sources. The knowledge of the X-ray spectrum is

  3. Investigation of photon counting pixel detectors for X-ray spectroscopy and imaging

    Energy Technology Data Exchange (ETDEWEB)

    Talla, Patrick Takoukam

    2011-04-07

    The Medipix2 and Medipix3 detectors are hybrid pixelated photon counting detectors with a pixel pitch of 55 {mu}m. The sensor material used in this thesis was silicon. Because of their small pixel size they suffer from charge sharing i.e. an incoming photon can be registered by more than one pixel. In order to correct for charge sharing due to lateral diffusion of charge carriers, the Medipix3 detector was developed: with its Charge Summing Mode, the charge collected in a cluster of 2 x 2 pixel is added up and attributed to only one pixel whose counter is incremented. The adjustable threshold of the detectors allows to count the photons and to gain information on their energy. The main purposes of the thesis are to investigate spectral and imaging properties of pixelated photon counting detectors from the Medipix family such as Medipix2 and Medipix3. The investigations are based on simulations and measurements. In order to investigate the spectral properties of the detectors measurements were performed using fluorescence lines of materials such as molybdenum, silver but also some radioactive sources such as Am-241 or Cd-109. From the measured data, parameters like the threshold dispersion and the gain variation from pixel-to-pixel were extracted and used as input in the Monte Carlo code ROSI to model the responses of the detector to monoenergetic photons. The measured data are well described by the simulations for Medipix2 and for Medipix3 operating in Charge Summing Mode. Due to charge sharing and due to the energy dependence of attenuation processes in silicon and to Compton scattering the incoming and the measured spectrum differ substantially from each other. Since the responses to monoenergetic photons are known, a deconvolution was performed to determine the true incoming spectrum. Several direct and iterative methods were successfully applied on measured and simulated data of an X-ray tube and radioactive sources. The knowledge of the X-ray spectrum is

  4. Radiationhard components for the control system of a future ATLAS pixel detector

    CERN Document Server

    Becker, K; Kersten, S; Kind, P; Mättig, P; Püllen, L; Zeitnitz, C

    2015-01-01

    will include a new pixel detector. A completely new detector control system (DCS) for this pixel detector will be required in order to cope with the substantial increase in radiation at the HL-LHC. The DCS has to have a very high reliability and all components installed within the detector volume have to be radiationhard. This will ensure a safe operation of the pixel detector and the experiment. A further design constraint is the minimization of the used material and cables in order to limit the impact on the tracking performance to a minimum. To meet these requirements we propose a DCS network which consists of a DCS chip and a DCS controller. In the following we present the development of the first prototypes for the DCS chip and the DCS controller with a special focus on the communication interface, radiation hardness and robustness against single event upsets.

  5. Operational Performance and Status of the ATLAS Pixel Detector at the LHC

    CERN Document Server

    Jentzsch, J; The ATLAS collaboration

    2014-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experi- ment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individu- ally read out via chips bump-bonded to 1744 n+-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including moni- toring, calibration procedures, timing optimization and detector performance. The record breaking instantaneous luminosities of 7.7 · 1033 cm−2s−1 recently surpassed at the Large Hadron Collider generate a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulates, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted and reveals an increase in the silico...

  6. Simulation on the Charged Particle Response of the STAR Heavy Flavor Tracker Pixel Detector

    Science.gov (United States)

    Cimaroli, Alex; Li, Xin

    2009-10-01

    The main task of the STAR experiment, located at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory, is to study the quark-gluon plasma (QGP), which is believed to have been created a few microseconds after the ``Big Bang.'' Heavy quarks are ideal tools for studying the properties of QGP. The Heavy Flavor Tracker (HFT) is the central part of the STAR future heavy flavor physics program and will enable STAR to directly measure heavy flavor mesons. The core of HFT is a pixel detector (PIXEL) using CMOS Active PIXEL Sensor. This poster will describe the development of a detailed simulation of the pixel detector response to charged particles and the corresponding fast simulation that dramatically enhances the simulation speed with little sacrifice in accuracy. The full simulation randomly generates ionized electrons along an incoming track and diffuses the electrons inside the pixel array until they are collected by the electronics or recombined inside a pixel. With the same result, the fast simulation, which quickens processing time from one hour to 5 seconds, generates a grid inside a single pixel and create a map of probability distribution functions for a single ionized electron generated from a grid point. We will also discuss the study of pixel detector position resolution using a simple clustering algorithm.

  7. Results on 0.7% X0 thick pixel modules for the ATLAS detector

    CERN Document Server

    Netchaeva, P; Darbo, G; Einsweiler, Kevin F; Gagliardi, G; Gemme, C; Gilchriese, M G D; Oppizzi, P; Richardson, J; Rossi, L; Ruscino, E; Vernocchi, F; Znizka, G

    2001-01-01

    Modules are the basic building blocks of the ATLAS pixel detector system, they are made of a silicon sensor tile containing ~46000 pixel cells of 50 mu m*400 mu m, 16 front-end chips connected to the sensor through bump bonding, a kapton flex circuit and the module controller chip. The pixel detector is the first to encounter particles emerging from LHC interactions, minimization of radiation length of pixel modules is therefore very important. We report here on the construction techniques and on the operation of the first ATLAS pixel modules of 0.7% radiation length thickness. We have operated these modules with threshold of 3700*10+or-300*10, mean noise value of 225*10 and 0.3% dead channels. (3 refs).

  8. Neural network based cluster creation in the ATLAS silicon Pixel Detector

    CERN Document Server

    Andreazza, A; The ATLAS collaboration

    2013-01-01

    The read-out from individual pixels on planar semi-conductor sensors are grouped into clusters to reconstruct the location where a charged particle passed through the sensor. The resolution given by individual pixel sizes is significantly improved by using the information from the charge sharing between pixels. Such analog cluster creation techniques have been used by the ATLAS experiment for many years to obtain an excellent performance. However, in dense environments, such as those inside high-energy jets, clusters have an increased probability of merging the charge deposited by multiple particles. Recently, a neural network based algorithm which estimates both the cluster position and whether a cluster should be split has been developed for the ATLAS Pixel Detector. The algorithm significantly reduces ambiguities in the assignment of pixel detector measurement to tracks within jets and improves the position accuracy with respect to standard interpolation techniques by taking into account the 2-dimensional ...

  9. Neural network based cluster creation in the ATLAS silicon Pixel Detector

    CERN Document Server

    Perez Cavalcanti, T; The ATLAS collaboration

    2012-01-01

    The hit signals read out from pixels on planar semi-conductor sensors are grouped into clusters, to reconstruct the location where a charged particle passed through. The resolution of the individual pixel sizes can be improved significantly using the information from the cluster of adjacent pixels. Such analog cluster creation techniques have been used by the ATLAS experiment for many years giving an excellent performance. However, in dense environments, such as those inside high-energy jets, is likely that the charge deposited by two or more close-by tracks merges into one single cluster. A new pattern recognition algorithm based on neural network methods has been developed for the ATLAS Pixel Detector. This can identify the shared clusters, split them if necessary, and estimate the positions of all particles traversing the cluster. The algorithm significantly reduces ambiguities in the assignment of pixel detector measurements to tracks within jets, and improves the positional accuracy with respect to stand...

  10. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  11. X-ray analog pixel array detector for single synchrotron bunch time-resolved imaging

    CERN Document Server

    Koerner, Lucas J

    2010-01-01

    Dynamic x-ray studies may reach temporal resolutions limited by only the x-ray pulse duration if the detector is fast enough to segregate synchrotron pulses. An analog integrating pixel array detector with in-pixel storage and temporal resolution of around 150 ns, sufficient to isolate pulses, is presented. Analog integration minimizes count-rate limitations and in-pixel storage captures successive pulses. Fundamental tests of noise and linearity as well as high-speed laser measurements are shown. The detector resolved individual bunch trains at the Cornell High Energy Synchrotron Source (CHESS) at levels of up to 3.7x10^3 x-rays/pixel/train. When applied to turn-by-turn x-ray beam characterization single-shot intensity measurements were made with a repeatability of 0.4% and horizontal oscillations of the positron cloud were detected. This device is appropriate for time-resolved Bragg spot single crystal experiments.

  12. 4.3 μm quantum cascade detector in pixel configuration.

    Science.gov (United States)

    Harrer, A; Schwarz, B; Schuler, S; Reininger, P; Wirthmüller, A; Detz, H; MacFarland, D; Zederbauer, T; Andrews, A M; Rothermund, M; Oppermann, H; Schrenk, W; Strasser, G

    2016-07-25

    We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D* of 5⋅107 cmHz/W was measured. PMID:27464155

  13. ASICs in nanometer and 3D technologies for readout of hybrid pixel detectors

    Science.gov (United States)

    Maj, Piotr; Grybos, Pawel; Kmon, Piotr; Szczygiel, Robert

    2013-07-01

    Hybrid pixel detectors working in a single photon counting mode are very attractive solutions for material science and medical X-ray imaging applications. Readout electronics of these detectors has to match the geometry of pixel detectors with an area of readout channel of 100 μm × 100 μm (or even less) and very small power consumption (a few tens of μW). New solutions of readout ASICs are going into directions of better spatial resolutions, higher data throughput and more advanced functionality. We report on the design and measurement results of two pixel prototype ASICs in nanometer technology and 3D technology which offer fast signal processing, low noise performance and advanced functionality per single readout pixel cell.

  14. Module Production and Qualification for the Phase I Upgrade of the CMS Pixel Detector

    CERN Document Server

    AUTHOR|(CDS)2086689

    2015-01-01

    After consolidation of the LHC in 2013/14 its centre-of-mass energy will increase to 13TeV and the luminosity will reach $2 \\cdot 10^{34}\\, \\textnormal{cm}^{-2} \\textnormal{s}^{-1}$, which is twice the design luminosity. The latter will result in more simultaneous particle collisions, which would significantly increase the dead time of the current readout chip of the CMS pixel detector. Therefore the entire CMS pixel detector is replaced in 2016/17 and a new digital readout with larger buffers will be used to handle increasing pixel hit rates. An additional fourth barrel-layer provides more space points to improve track reconstruction. Half of the required modules for layer four is being produced at Karlsruhe Institute of Technology (KIT). This poster deals with the smallest discrete subunit of the pixel detector, the module and its assembly process. Moreover first production experience will be shown.

  15. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Y; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair the modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using light weight staves and CO$_{2}$ based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and the IBL pr...

  16. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  17. The ATLAS Pixel Detector for Run II at the Large Hadron Collider

    CERN Document Server

    Marx, Marilyn; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  18. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    Run-2 of the LHC will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed as well as a new read-out chip within CMOS 130nm technology and with larger area, smaller pixel size and faster readout capability. The new detector is the first large scale application of of 3D detectors and CMOS 130nm technology. An overview of the lessons learned during the IBL project will be presented, focusing on the challenges and highlighting the issues met during the productio...

  19. X-ray characterization of a multichannel smart-pixel array detector.

    Science.gov (United States)

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements. PMID:26698064

  20. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    CERN Document Server

    Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

    2015-01-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

  1. X-ray Characterization of a Multichannel Smart-Pixel Array Detector

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A.; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

  2. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    CERN Document Server

    ATLAS Pixel Collaboration; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as ...

  3. A study on the shielding mechanisms of SOI pixel detector

    CERN Document Server

    Lu, Yunpeng; Wu, Zhigang; Ouyang, Qun; Arai, Yasuo

    2015-01-01

    In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS process. A TCAD simulation showed the shielding effectiveness influenced by the high sheet resistance of shielding layers. Test structures specially designed to measure the crosstalk associated to charge injection were implemented in CPIXTEG3/3b. Measurement results proved that using shielding layer is indispensable for counting type pixel and Double-SOI is superior to Nested-well in terms of shielding effectiveness and design flexibility.

  4. Design of analog-to-digital converters for energy sensitive hybrid pixel detectors

    NARCIS (Netherlands)

    San Segundo Bello, David; Nauta, Bram; Visschers, Jan

    2001-01-01

    An important feature of hybrid semiconductor pixel detectors is the fact that detector and readout electronics are manufactured separately, allowing the use of industrial state-of-the-art CMOS processes to manufacture the readout electronics. As the feature size of these processes decreases, faster

  5. Pixel array detector for X-ray free electron laser experiments

    Energy Technology Data Exchange (ETDEWEB)

    Philipp, Hugh T., E-mail: htp2@cornell.edu [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Hromalik, Marianne [Electrical and Computer Engineering, SUNY Oswego, Oswego, NY 13126 (United States); Tate, Mark; Koerner, Lucas [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M. [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Wilson Laboratory, Cornell University, CHESS, Ithaca, NY 14853 (United States)

    2011-09-01

    X-ray free electron lasers (XFELs) promise to revolutionize X-ray science with extremely high peak brilliances and femtosecond X-ray pulses. This will require novel detectors to fully realize the potential of these new sources. There are many current detector development projects aimed at the many challenges of meeting the XFEL requirements . This paper describes a pixel array detector (PAD) that has been developed for the Coherent X-ray Imaging experiment at the Linac Coherent Light Source (LCLS) at the SLAC National Laboratory . The detector features 14-bit in-pixel digitization; a 2-level in-pixel gain setting that can be used to make an arbitrary 2-D gain pattern that is adaptable to a particular experiment; the ability to handle instantaneous X-ray flux rates of 10{sup 17} photons per second; and continuous frames rates in excess of 120 Hz. The detector uses direct detection of X-rays in a silicon diode. The charge produced by the diode is integrated in a pixilated application specific integrated circuit (ASIC) which digitizes collected holes with single X-ray photon capability. Each ASIC is 194x185 pixels, each pixel is 110{mu}mx110{mu}m on a side. Each pixel can detect up to 2500 X-rays per frame in low-gain mode, yet easily detects single photons at high-gain. Cooled, single-chip detectors have been built and meet all the required specifications. SLAC National Laboratory is engaged in constructing a tiled, multi-chip 1516x1516 pixel detector.

  6. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors

    OpenAIRE

    Calderón, Y.; Chmeissani, M.; Kolstein, M.; De Lorenzo, G.

    2014-01-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm2 area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm3. The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(G...

  7. The Layer 1 / Layer 2 readout upgrade for the ATLAS Pixel Detector

    CERN Document Server

    Mullier, Geoffrey; The ATLAS collaboration

    2016-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC). The increase of instantaneous luminosity foreseen during the LHC Run 2, will lead to an increased detector occupancy that is expected to saturate the readout links of the outermost layers of the pixel detector: Layers 1 and 2. To ensure a smooth data taking under such conditions, the read out system of the recently installed fourth innermost pixel layer, the Insertable B-Layer, was modified to accomodate the needs of the older detector. The Layer 2 upgrade installation took place during the 2015 winter shutdown, with the Layer 1 installation scheduled for 2016. A report of the successful installation, together with the design of novel dedicated optical to electrical converters and the software and firmware updates will be presented.

  8. The pixel hybrid photon detectors for the LHCb-RICH project

    CERN Document Server

    Gys, Thierry

    2001-01-01

    This paper describes a hybrid photon detector with integrated silicon pixel readout to be used in the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 5. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The paper starts with the general specification of the baseline option. Followed by a summary of the main results achieved so far during the R&D phase. It concludes with a description of the remaining work towards the final photon detector. (17 refs).

  9. Design, production and first operation of the ALICE Silicon Pixel Detector system

    CERN Document Server

    Kluge, A; Antinori, F; Burns, M; Cali, I A; Campbell, M; Caselle, M; Cavicchioli, C; Dima, R; Elia, D; Fabris, D; Krivda, M; Librizzi, F; Manzari, V; Marangio, G; Morel, M; Moretto, S; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato Matos, C; Turrisi, R; Tydesjol, H; Viesti, G

    2008-01-01

    The ALICE Silicon Pixel Detector (SPD) constitutes the two innermost barrel layers of the ALICE experiment. The SPD is the detector closest to the interaction point, mounted around the beam pipe with the two layers at r=3.9 cm and 7.6 cm distance from beam axis. In order to reduce multiple scattering the material budget per layer in the active region has been limited to ≈1% X0. The SPD consists of 120 hybrid silicon pixel detectors modules with a total of ~107 cells. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The readout electronics, located in the control room, is housed in 20 VME boards; it is the interface to the ALICE trigger, data acquisition, control system and detector electronics. In this contribution the SPD detector components design and production are reviewed. First operation results are reported.

  10. DEPFET Active Pixel Detectors for a Future Linear e(+}e({-)) Collider

    Science.gov (United States)

    Alonso, O.; Casanova, R.; Dieguez, A.; Dingfelder, J.; Hemperek, T.; Kishishita, T.; Kleinohl, T.; Koch, M.; Kruger, H.; Lemarenko, M.; Lutticke, F.; Marinas, C.; Schnell, M.; Wermes, N.; Campbell, A.; Ferber, T.; Kleinwort, C.; Niebuhr, C.; Soloviev, Y.; Steder, M.; Volkenborn, R.; Yaschenko, S.; Fischer, P.; Kreidl, C.; Peric, I.; Knopf, J.; Ritzert, M.; Curras, E.; Lopez-Virto, A.; Moya, D.; Vila, I.; Boronat, M.; Esperante, D.; Fuster, J.; Garcia, I. Garcia; Lacasta, C.; Oyanguren, A.; Ruiz, P.; Timon, G.; Vos, M.; Gessler, T.; Kuhn, W.; Lange, S.; Munchow, D.; Spruck, B.; Frey, A.; Geisler, C.; Schwenker, B.; Wilk, F.; Barvich, T.; Heck, M.; Heindl, S.; Lutz, O.; Muller, Th.; Pulvermacher, C.; Simonis, H. J.; Weiler, T.; Krausser, T.; Lipsky, O.; Rummel, S.; Schieck, J.; Schluter, T.; Ackermann, K.; Andricek, L.; Chekelian, V.; Chobanova, V.; Dalseno, J.; Kiesling, C.; Koffmane, C.; Gioi, L. Li; Moll, A.; Moser, H. G.; Muller, F.; Nedelkovska, E.; Ninkovic, J.; Petrovics, S.; Prothmann, K.; Richter, R.; Ritter, A.; Ritter, M.; Simon, F.; Vanhoefer, P.; Wassatsch, A.; Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Scheirich, J.

    2013-04-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\\mathrm{\\mathbf{\\mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\\mathbf{e^+ e^-}$ collider.

  11. Calibration of the CMS Pixel Detector at the Large Hadron Collider

    CERN Document Server

    Vami, Tamas Almos

    2015-01-01

    The Compact Muon Solenoid (CMS) detector is one of two general-purpose detectors that reconstruct the products of high energy particle interactions at the Large Hadron Collider (LHC) at CERN. The silicon pixel detector is the innermost component of the CMS tracking system. It determines the trajectories of charged particles originating from the interaction region in three points with high resolution enabling precise momentum and impact parameter measurements in the tracker. The pixel detector is exposed to intense ionizing radiation generated by particle collisions in the LHC. This irradiation could result in temporary or permanent malfunctions of the sensors and could decrease the efficiency of the detector. We have developed procedures in order to correct for these effects. In this paper, we present the types of malfunctions and the offline calibration procedures. We will also show the efficiency and the resolution of the detector in 2012.

  12. DEPFET active pixel detectors for a future linear e+e− collider

    CERN Document Server

    Vos, M

    2010-01-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 µm. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear e^+e^− collider.

  13. DEPFET active pixel detectors for a future linear $e^+e^-$ collider

    CERN Document Server

    Alonso, O; Dieguez, A; Dingfelder, J; Hemperek, T; Kishishita, T; Kleinohl, T; Koch, M; Krueger, H; Lemarenko, M; Luetticke, F; Marinas, C; Schnell, M; Wermes, N; Campbell, A; Ferber, T; Kleinwort, C; Niebuhr, C; Soloviev, Y; Steder, M; Volkenborn, R; Yaschenko, S; Fischer, P; Kreidl, C; Peric, I; Knopf, J; Ritzert, M; Curras, E; Lopez-Virto, A; Moya, D; Vila, I; Boronat, M; Esperante, D; Fuster, J; Garcia Garcia, I; Lacasta, C; Oyanguren, A; Ruiz, P; Timon, G; Vos, M; Gessler, T; Kuehn, W; Lange, S; Muenchow, D; Spruck, B; Frey, A; Geisler, C; Schwenker, B; Wilk, F; Barvich, T; Heck, M; Heindl, S; Lutz, O; Mueller, Th; Pulvermacher, C; Simonis, H.J; Weiler, T; Krausser, T; Lipsky, O; Rummel, S; Schieck, J; Schlueter, T; Ackermann, K; Andricek, L; Chekelian, V; Chobanova, V; Dalseno, J; Kiesling, C; Koffmane, C; Gioi, L.Li; Moll, A; Moser, H.G; Mueller, F; Nedelkovska, E; Ninkovic, J; Petrovics, S; Prothmann, K; Richter, R; Ritter, A; Ritter, M; Simon, F; Vanhoefer, P; Wassatsch, A; Dolezal, Z; Drasal, Z; Kodys, P; Kvasnicka, P; Scheirich, J

    2013-01-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\\mathrm{\\mathbf{\\mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\\mathbf{e^+ e^-}$ collider.

  14. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    International Nuclear Information System (INIS)

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects

  15. Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

    Energy Technology Data Exchange (ETDEWEB)

    Ricq, St

    1999-09-28

    The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

  16. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Takubo, Yosuke

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detect or and of the IBL project as...

  17. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy

    CERN Document Server

    Tate, Mark W; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert M; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

    2015-01-01

    We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as loc...

  18. The upgraded Pixel Detector of the ATLAS experiment for Run-2 at the Large Hadron Collider

    International Nuclear Information System (INIS)

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC) . Taking advantage of Long Shutdown 1 (LS1) during 2014/2015, the Pixel Detector was brought to surface to equip it with new service panels and to repair modules. The Insertable B-Layer (IBL), a fourth layer of pixel sensors, was installed in-between the existing Pixel Detector and a new beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) were used and a new readout chip has been designed with CMOS 130 nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performance. An overview of the lessons learned during the IBL project is presented, focusing on the challenges and highlighting the issues met during the production, integration, installation and commissioning phases of the detector. Early performance tests using cosmic and beam data are also presented

  19. A study on the shielding mechanisms of SOI pixel detector

    OpenAIRE

    Lu, Yunpeng; Liu, Yi; Wu, Zhigang; Ouyang, Qun; Arai, Yasuo

    2015-01-01

    In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS process. A TCAD simulation showed the shielding effectiveness influenced by the high sheet resistance of shielding layers. Test structures specially designed to measure the crosstalk associated to charge injection were implemented in CPIXTEG3/3b. Measuremen...

  20. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

    Energy Technology Data Exchange (ETDEWEB)

    Philipp, Hugh T., E-mail: htp2@cornell.edu; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T. [Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M. [Cornell University, Ithaca, NY 14853 (United States); Cornell University, Ithaca, NY 14853 (United States)

    2016-01-28

    A high-speed pixel array detector for time-resolved X-ray imaging at synchrotrons has been developed. The ability to isolate single synchrotron bunches makes it ideal for time-resolved dynamical studies. A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

  1. Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

    Energy Technology Data Exchange (ETDEWEB)

    Blago, Michele Piero; Schoening, Andre [Physikalisches Institut, Heidelberg Univ. (Germany)

    2015-07-01

    Recent progress in pixel detector technology in general and in the HV-MAPS technology in particular make it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS or CMS. Previous studies have indicated that six to nine layers of pixel sensors, in comparison to the 14 detector layers planned for Inner Tracker ATLAS upgrade, are sufficient to reliably reconstruct particle trajectories. The performance of an all-pixel detector and the minimum number of required pixel layers is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

  2. The Pixel Detector of the ATLAS Experiment for LHC Run-2

    CERN Document Server

    Pernegger, Heinz; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and hit occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as we...

  3. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Backhaus, Malte; The ATLAS collaboration

    2015-01-01

    During Run-1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This includes the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore a new readout chip and two new sensor technologies (planar and 3D) are used in IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanic...

  4. A new generation of small pixel pitch/SWaP cooled infrared detectors

    Science.gov (United States)

    Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

    2015-10-01

    Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

  5. NIRSpec detectors: noise properties and the effect of signal dependent inter-pixel crosstalk

    Science.gov (United States)

    Giardino, Giovanna; Sirianni, Marco; Birkmann, Stephan M.; Rauscher, Bernard J.; Lindler, Don; Boeker, Torsten; Ferruit, Pierre; De Marchi, Guido; Stuhlinger, Martin; Jensen, Peter; Strada, Paolo

    2012-07-01

    NIRSpec (Near Infrared Spectrograph) is one of the four science instruments of the James Webb Space Telescope (JWST) and its focal plane consists of two HAWAII-2RG sensors operating in the wavelength range 0.6-5.0μm. As part of characterizing NIRSpec, we studied the noise properties of these detectors under dark and illuminated conditions. Under dark conditions, and as already known, 1/f noise in the detector system produces somewhat more noise than can be accounted for by a simple model that includes white read noise and shot noise on integrated charge. More surprisingly, at high flux, we observe significantly lower total noise levels than expected. We show this effect to be due to pixel-to-pixel correlations introduced by signal dependent inter-pixel crosstalk, with an inter-pixel coupling factor, α, that ranges from ~ 0.01 for zero signal to ~ 0.03 close to saturation.

  6. Development of DC-DC converters for the upgrade of the CMS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Feld, Lutz; Karpinski, Waclaw; Klein, Katja; Sammet, Jan; Wlochal, Michael [RWTH Aachen University (Germany)

    2012-07-01

    Around 2017, the pixel detector of the CMS experiment at LHC will be upgraded. The amount of current that has to be provided to the front-end electronics is expected to increase by a factor of two. Since the space available for cables is limited, this would imply unacceptable power losses in the available supply cables. Therefore it is foreseen to place DC-DC converters close to the front-end electronics, allowing to provide the power at higher voltages and thereby to facilitate the supply of the required currents with the present cable plant. The talk introduces the foreseen powering scheme of the pixel upgrade and summarizes the results of system test measurements with CMS pixel sensor modules, radiation tolerant DC-DC converters and the full power supply chain of the pixel detector. In addition, measurements of the converter efficiency and performance before, after and during thermal cycling are presented.

  7. Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

    Science.gov (United States)

    Viel, Simon; Banerjee, Swagato; Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice; Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar; Pranko, Aliaksandr; Rieger, Julia; Wolf, Julian; Wu, Sau Lan; Yang, Hongtao

    2016-09-01

    In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN.

  8. The barrel sector assembly system of the ALICE silicon pixel detector

    CERN Document Server

    Antinori, F; Cinausero, M; Dima, R; Fabris, D; Fioretto, E; Lunardon, M; Moretto, S; Pepato, Adriano; Prete, G; Scarlassara, F; Segato, G F; Soramel, F; Turrisi, R; Vannucci, L; Viesti, G

    2004-01-01

    The Silicon Pixel Detector is the inner part of the ITS tracking system of the ALICE experiment at LHC. The 240 silicon modules, hosting almost 10 million pixel cells with dimension 50 . 425 mu m /sup 2/, have to be assembled on a carbon fiber support with micrometric precision. To reach this result, a dedicated high- precision computer-controlled tooling system has been developed at the INFN Padova. The assembly system and the mounting procedures are presented. (10 refs).

  9. Studies for the detector control system of the ATLAS pixel at the HL-LHC

    International Nuclear Information System (INIS)

    In the context of the LHC upgrade to the HL-LHC the inner detector of the ATLAS experiment will be replaced completely. As part of this redesign there will also be a new pixel detector. This new pixel detector requires a control system which meets the strict space requirements for electronics in the ATLAS experiment. To accomplish this goal we propose a DCS (Detector Control System) network with the smallest form factor currently available. This network consists of a DCS chip located in close proximity to the interaction point and a DCS controller located in the outer regions of the ATLAS detector. These two types of chips form a star shaped network with several DCS chips being controlled by one DCS controller. Both chips are manufactured in deep sub-micron technology. We present prototypes with emphasis on studies concerning single event upsets.

  10. Low-cost bump-bonding processes for high energy physics pixel detectors

    International Nuclear Information System (INIS)

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The short setup time for the bumping process makes gold-stud bump-bonding highly attractive (and affordable) for the flip-chipping of single prototype ICs, which is the main limitation of the current photolithography processes

  11. \\title{Low-Cost Bump-Bonding Processes for High Energy Physics Pixel Detectors}

    CERN Document Server

    Caselle, Michele; Colombo, Fabio; Dierlamm, Alexander Hermann; Husemann, Ulrich; Kudella, Simon; Weber, M

    2015-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area at reasonable costs are required. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of the production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin ($15\\,\\rm{\\mu m}$) gold wire is presented. This technique allows producing metal bumps with diameters down to $30\\,\\rm{\\mu m}$ without using photolithography processes, which are typically required to provide suitable under bu...

  12. Low-cost bump-bonding processes for high energy physics pixel detectors

    Science.gov (United States)

    Caselle, M.; Blank, T.; Colombo, F.; Dierlamm, A.; Husemann, U.; Kudella, S.; Weber, M.

    2016-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15 μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30 μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The short setup time for the bumping process makes gold-stud bump-bonding highly attractive (and affordable) for the flip-chipping of single prototype ICs, which is the main limitation of the current photolithography processes.

  13. Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Chen, E.; Gul, R.; Dedic, V.; De Geronimo, G.; Fried, J.; Hossain, A.; MacKenzie, J. M.; Ocampo, L.; Sellin, P.; Taherion, S.; Vernon, E.; Yang, G.; El-Hanany, U.; James, R. B.

    2016-09-01

    The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias to evaluate the μτ product, which in turn can be converted into the carrier lifetime. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the distance. This condition is not fulfilled in practice at low applied biases, where the Hecht equation is most sensitive to the μτ product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low μτ-product material, <10-3 cm2/V, but give significantly underestimated values for the case of high μτ-product crystals. In this work, we applied the drift-time method to measure the electron lifetimes in long-drift-length (4 cm) standard-grade CZT detectors produced by the Redlen Technologies. We found that the electron μτ product of tested crystals is in the range 0.1-0.2 cm2/V, which is an order of the magnitude higher than any value previously reported for a CZT material. In comparison, using the Hecht equation fitting, we obtained μτ = 2.3 × 10-2 cm2/V for a 2-mm thin planar detector fabricated from the same CZT material.

  14. 14C autoradiography with an energy-sensitive silicon pixel detector

    International Nuclear Information System (INIS)

    The first performance tests are presented of a carbon-14 (14C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 μm thick silicon detector with 256 x 256 pixels of 55 μm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) x 10-3 cps mm-2 kBq-1 g, background level, (3.59 ± 0.01) x 10-5 cps mm-2, and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 μm full-width at half-maximum. These figures are compared with several digital imaging detectors for 14C beta-particle digital autoradiography.

  15. Novel module production methods for the CMS pixel detector, upgrade phase I

    Science.gov (United States)

    Blank, T.; Caselle, M.; Weber, M.; Kudella, S.; Colombo, F.; Hansen, K.; Arab, S.

    2015-02-01

    For the High-Luminosity upgrade of the LHC (HL-LHC), phase I, the CMS pixel detector needs to be replaced. In order to improve the tracking resolution even at high luminosity the pixel detector is upgraded by a fourth barrel layer. This paper describes the production process and results for the fourth barrel layer for the CMS silicon pixel detector, upgrade phase I. The additional barrel layer will be produced by KIT and DESY. Both research centers have commonly developed and investigated new production processes, including SAC solder bump jetting, gold stud bumping and "Precoat by Powder Processes" (PPS) to bump the sensor tiles and prepare them for the flip-chip process. First bare modules have been produced with the new digital ROC.

  16. Performance of the Insertable B-Layer for the ATLAS Pixel Detector during Quality Assurance and a Novel Pixel Detector Readout Concept based on PCIe

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00356268; Pernegger, Heinz

    2016-07-27

    During the first long shutdown of the LHC the Pixel detector has been upgraded with a new 4th innermost layer, the Insertable B-Layer (IBL). The IBL will increase the tracking performance and help with higher than nominal luminosity the LHC will produce. The IBL is made up of 14 staves and in total 20 staves have been produced for the IBL. This thesis presents the results of the final quality tests performed on these staves in an detector-like environment, in order to select the 14 best of the 20 staves for integration onto the detector. The test setup as well as the testing procedure is introduced and typical results of each testing stage are shown and discussed. The overall performance of all staves is presented in regards to: tuning performance, radioactive source measurements, and number of failing pixels. Other measurement, which did not directly impact the selection of staves, but will be important for the operation of the detector or production of a future detector, are included. Based on the experienc...

  17. Recent progress in the development of a B-factory monolithic active pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Stanic, S. [University of Nova Gorica, Vipavska 13, 5000 Nova Gorica (Slovenia)]. E-mail: samo.stanic@p-ng.si; Aihara, H. [University of Tokyo, Department of Physics, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-0033 (Japan); Barbero, M. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Bozek, A. [H. Niewoniczanski Institute of Nuclear Physics, Polish Academy of Sciences, Ul. Radzikowskiego 152, 31-342 Cracow (Poland); Browder, T. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Hazumi, M. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba 305-0801 (Japan); Kennedy, J. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Kent, N. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Olsen, S. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Palka, H. [H. Niewoniczanski Institute of Nuclear Physics, Polish Academy of Sciences, Ul. Radzikowskiego 152, 31-342 Cracow (Poland); Rosen, M. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Ruckman, L. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Trabelsi, K. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Tsuboyama, T. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba 305-0801 (Japan); Uchida, K. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States); Varner, G.; Yang, Q. [Department of Physics and Astronomy, University of Hawaii, 2505 Correa Road, Honolulu HI 96822 (United States)

    2006-11-30

    Due to the need for precise vertexing at future higher luminosity B-factories with the expectedly increasing track densities and radiation exposures, upgrade of present silicon strip detectors with thin, radiation resistant pixel detectors is highly desired. Considerable progress in the technological development of thin CMOS based Monolithic Active Pixel Sensors (MAPS) in the last years makes them a realistic upgrade option and the feasibility studies of their application in Belle are actively pursued. The most serious concerns are their radiation hardness and their read-out speed. To address them, several prototypes denoted as Continuous Acquisition Pixel (CAP) sensors have been developed and tested. The latest of the CAP sensor prototypes is CAP3, designed in the TSMC 0.25{mu}m process with a 5-deep sample pair pipeline in each pixel. A setup with several CAP3 sensors will be used to assess the performance of a full scale pixel read-out system running at realistic read-out speed. The results and plans for the next stages of R and D towards a full Pixel Vertex Detector (PVD) are presented.

  18. Recent progress in the development of a B-factory monolithic active pixel detector

    Science.gov (United States)

    Stanič, S.; Aihara, H.; Barbero, M.; Bozek, A.; Browder, T.; Hazumi, M.; Kennedy, J.; Kent, N.; Olsen, S.; Palka, H.; Rosen, M.; Ruckman, L.; Trabelsi, K.; Tsuboyama, T.; Uchida, K.; Varner, G.; Yang, Q.

    2006-11-01

    Due to the need for precise vertexing at future higher luminosity B-factories with the expectedly increasing track densities and radiation exposures, upgrade of present silicon strip detectors with thin, radiation resistant pixel detectors is highly desired. Considerable progress in the technological development of thin CMOS based Monolithic Active Pixel Sensors (MAPS) in the last years makes them a realistic upgrade option and the feasibility studies of their application in Belle are actively pursued. The most serious concerns are their radiation hardness and their read-out speed. To address them, several prototypes denoted as Continuous Acquisition Pixel (CAP) sensors have been developed and tested. The latest of the CAP sensor prototypes is CAP3, designed in the TSMC 0.25 μm process with a 5-deep sample pair pipeline in each pixel. A setup with several CAP3 sensors will be used to assess the performance of a full scale pixel read-out system running at realistic read-out speed. The results and plans for the next stages of R&D towards a full Pixel Vertex Detector (PVD) are presented.

  19. Status and Plan for The Upgrade of The CMS Pixel Detector

    CERN Document Server

    Lu, Rong-Shyang

    2014-01-01

    The silicon pixel detector is the innermost component of the CMS tracking system and plays a crucial role in the all-silicon CMS tracker. While the current pixel tracker is designed for and performing well at an instantaneous luminosity of up to $\\rm 1\\times 10^{34}cm^{-2}s^{-1}$, it can no longer be operated efficiently at significantly higher values. Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity are likely to be reached before 2018 and perhaps significantly exceeded in the running period until 2022, referred to as LHC Run 3. Therefore, an upgraded pixel detector, referred to as the phase 1 upgrade, is planned for the year-end technical stop in 2016. With a new pixel readout chip (ROC), an additional fourth layer, two additional endcap disks, and a significantly reduced material budget the upgraded pixel detector will be able to sustain the efficiency of the pixel tracker at the increased requirements imposed by high lumin...

  20. Performance and applications of a high rate imaging pixel detector

    Science.gov (United States)

    Pavel, N. A.; Besch, H. J.; Menk, R.; Sarvestani, A.; Sauer, N.; Stiehler, R.; Walenta, A. H.

    2002-01-01

    In the past years a large variety of gas filled micro pattern detectors have been developed for applications in high energy physics as well as for X-ray imaging in synchrotron light experiments. Here, we present the most recent developments on the MicroCAT detector with resistive position encodeing readout, which has been demonstrated to meet even the strong requirements in high resolution protein crystallography and time resolved small angle scattering at synchrotron light sources of the third generation. Recent test measurements with the prototype under the working conditions of a synchrotron light source as well as high time resolved measurements in the laboratory are presented.

  1. Performance and applications of a high rate imaging pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Pavel, N.A. E-mail: pavel@alwa02.physik.uni-siegen.de; Besch, H.J.; Menk, R.; Sarvestani, A.; Sauer, N.; Stiehler, R.; Walenta, A.H

    2002-01-21

    In the past years a large variety of gas filled micro pattern detectors have been developed for applications in high energy physics as well as for X-ray imaging in synchrotron light experiments. Here, we present the most recent developments on the MicroCAT detector with resistive position encodeing readout, which has been demonstrated to meet even the strong requirements in high resolution protein crystallography and time resolved small angle scattering at synchrotron light sources of the third generation. Recent test measurements with the prototype under the working conditions of a synchrotron light source as well as high time resolved measurements in the laboratory are presented.

  2. The Pixel Detector of the ATLAS Experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO$_2$ based cooling system have been adopted. The IBL construction and installation in the ATLAS Experiment has been completed very successfu...

  3. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Mandelli, B; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  4. The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and will be installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project as well as the ...

  5. Beam test characterization of CMS silicon pixel detectors for the phase-1 upgrade

    International Nuclear Information System (INIS)

    The Silicon Pixel Detector forms the innermost part of the CMS tracking system and is critical to track and vertex reconstruction. Being in close proximity to the beam interaction point, it is exposed to the highest radiation levels in the silicon tracker. In order to preserve the tracking performance with the LHC luminosity increase which is foreseen for the next years, the CMS collaboration has decided to build a new pixel detector with four barrel layers mounted around a reduced diameter beam pipe, as compared to the present three layer pixel detector in the central region. A new digital version of the front-end readout chip has been designed and tested; it has increased data buffering and readout link speed to maintain high efficiency at increasing occupancy. In addition, it offers lower charge thresholds that will improve the tracking efficiency and position resolution. Single chip modules have been evaluated in the DESY electron test beam in terms of charge collection, noise, tracking efficiency and position resolution before and after irradiation with 24 GeV protons from the CERN Proton Synchroton equivalent to the fluence expected after 500 fb−1 of integrated luminosity in the fourth layer of the pixel tracker. High efficiency and an excellent position resolution have been observed which are well maintained even after the proton irradiation. The results are well described by the CMS pixel detector simulation

  6. The upgraded Pixel Detector of the ATLAS Experiment for Run2 at the Large Hadron Collider

    CERN Document Server

    Mullier, Geoffrey Andre; The ATLAS collaboration

    2015-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL), a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and increased pixel occupancy due to the proximity to the interaction point, two different silicon sensor technologies (planar and 3D) have been developed. A new readout chip has been developed within CMOS 130nm technology with larger area, smaller pixel size and faster readout capability. Dedicated design features in combination with a new composite material were considered and used in order to reduce the material budget of the support structure while keeping the optimal thermo-mechanical performan...

  7. Geneva University: Pixel Detectors – trends and options for the future

    CERN Multimedia

    Geneva University

    2012-01-01

    GENEVA UNIVERSITY École de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92   Wednesday 25 April 2012 SEMINAIRE DE PHYSIQUE CORPUSCULAIRE Science III, Auditoire 1S081 30Science III, Auditoire 1S081 30 Pixel Detectors – trends and options for the future Prof. Norbert Wermes - University of Bonn  Pixel detectors have been invented in the early 90s with the advancement of micro technologies. With the advent of the LHC, big vertex detectors have demonstrated that the pixel detector type is holding many of the promises it had made before. Meanwhile new, different or just improved variants of the pixel technology are being studied for their suitability for future experiments or experiment upgrades. The talk will address the various pro's and con's comparing hybrid and monolithic pixel technologies and their su...

  8. The Pixel Detector of the ATLAS experiment for the Run 2 at the Large Hadron Collider

    CERN Document Server

    Oide, H; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). The IBL is the fourth layer of the Run 2 Pixel Detector, and it was installed in May 2014 between the existing Pixel Detector and the new smaller-radius beam pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. IBL construction is now completed. An overview of the IBL project...

  9. Beam test characterization of CMS silicon pixel detectors for the phase-1 upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Korol, I.

    2015-10-01

    The Silicon Pixel Detector forms the innermost part of the CMS tracking system and is critical to track and vertex reconstruction. Being in close proximity to the beam interaction point, it is exposed to the highest radiation levels in the silicon tracker. In order to preserve the tracking performance with the LHC luminosity increase which is foreseen for the next years, the CMS collaboration has decided to build a new pixel detector with four barrel layers mounted around a reduced diameter beam pipe, as compared to the present three layer pixel detector in the central region. A new digital version of the front-end readout chip has been designed and tested; it has increased data buffering and readout link speed to maintain high efficiency at increasing occupancy. In addition, it offers lower charge thresholds that will improve the tracking efficiency and position resolution. Single chip modules have been evaluated in the DESY electron test beam in terms of charge collection, noise, tracking efficiency and position resolution before and after irradiation with 24 GeV protons from the CERN Proton Synchroton equivalent to the fluence expected after 500 fb{sup −1} of integrated luminosity in the fourth layer of the pixel tracker. High efficiency and an excellent position resolution have been observed which are well maintained even after the proton irradiation. The results are well described by the CMS pixel detector simulation.

  10. The ONSEN Data Reduction System for the Belle II Pixel Detector

    CERN Document Server

    Geßler, Thomas; Lange, Jens Sören; Liu, Zhen'An; Münchow, David; Spruck, Björn; Zhao, Jingzhou

    2015-01-01

    We present an FPGA-based online data reduction system for the pixel detector of the future Belle II experiment. The occupancy of the pixel detector is estimated at 3 %. This corresponds to a data output rate of more than 20 GB/s after zero suppression, dominated by background. The Online Selection Nodes (ONSEN) system aims at reducing the background data by a factor of 30. It consists of 33 MicroTCA cards, each equipped with a Xilinx Virtex-5 FPGA and 4 GiB DDR2 RAM. These cards are hosted by 9 AdvancedTCA carrier boards. The ONSEN system buffers the entire output data from the pixel detector for up to 5 seconds. During this time, the Belle II high-level trigger PC farm performs an online event reconstruction, using data from the other Belle II subdetectors. It extrapolates reconstructed tracks to the layers of the pixel detector and defines regions of interest around the intercepts. Based on this information, the ONSEN system discards all pixels not inside a region of interest before sending the remaining hi...

  11. Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation

    CERN Document Server

    Andreazza, A; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit ...

  12. Compressive spectral polarization imaging by a pixelized polarizer and colored patterned detector.

    Science.gov (United States)

    Fu, Chen; Arguello, Henry; Sadler, Brian M; Arce, Gonzalo R

    2015-11-01

    A compressive spectral and polarization imager based on a pixelized polarizer and colored patterned detector is presented. The proposed imager captures several dispersed compressive projections with spectral and polarization coding. Stokes parameter images at several wavelengths are reconstructed directly from 2D projections. Employing a pixelized polarizer and colored patterned detector enables compressive sensing over spatial, spectral, and polarization domains, reducing the total number of measurements. Compressive sensing codes are specially designed to enhance the peak signal-to-noise ratio in the reconstructed images. Experiments validate the architecture and reconstruction algorithms.

  13. A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

    CERN Document Server

    Gorelov, Igor; The ATLAS collaboration

    2015-01-01

    A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for various operating scenarios.

  14. Gamma spectroscopic measurements using the PID350 pixelated CdTe radiation detector

    CERN Document Server

    Karafasoulis, K; Seferlis, S; Papadakis, I; Loukas, D; Lambropoulos, C; Potiriadis, C

    2010-01-01

    Spectroscopic measurements are presented using the PID350 pixelated gamma radiation detectors. A high-speed data acquisition system has been developed in order to reduce the data loss during the data reading in case of a high flux of photons. A data analysis framework has been developed in order to improve the resolution of the acquired energy spectra, using specific calibration parameters for each PID350's pixel. Three PID350 detectors have been used to construct a stacked prototype system and spectroscopic measurements have been performed in order to test the ability of the prototype to localize radioactive sources.

  15. Simulation of active-edge pixelated CdTe radiation detectors

    OpenAIRE

    Duarte, DD; Lipp, JD; Schneider, A.; Seller, P; Veale, MC; Wilson, MD; Baker, MA; Sellin, PJ

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper sh...

  16. A history of hybrid pixel detectors, from high energy physics to medical imaging

    Science.gov (United States)

    Delpierre, P.

    2014-05-01

    The aim of this paper is to describe the development of hybrid pixel detectors from the origin to the application on medical imaging. We are going to recall the need for fast 2D detectors in the high energy physics experiments and to follow the different pixel electronic circuits created to satisfy this demand. The adaptation of these circuits for X-rays will be presented as well as their industrialization. Today, a number of applications are open for these cameras, particularly for biomedical imaging applications. Some developments for clinical CT will also be shown.

  17. Medipix3: A 64 k pixel detector readout chip working in single photon counting mode with improved spectrometric performance

    CERN Document Server

    Ballabriga, R; Wong, W; Heijne, E; Campbell, M; Llopart, X

    2011-01-01

    Medipix3 is a 256 x 256 channel hybrid pixel detector readout chip working in a single photon counting mode with a new inter-pixel architecture, which aims to improve the energy resolution in pixelated detectors by mitigating the effects of charge sharing between channels. Charges are summed in all 2 x 2 pixel clusters on the chip and a given hit is allocated locally to the pixel summing circuit with the biggest total charge on an event-by-event basis. Each pixel contains also two 12-bit binary counters with programmable depth and overflow control. The chip is configurable such that either the dimensions of each detector pixel match those of one readout pixel or detector pixels are four times greater in area than the readout pixels. In the latter case, event-by-event summing is still possible between the larger pixels. Each pixel has around 1600 transistors and the analog static power consumption is below 15 mu W in the charge summing mode and 9 mu W in the single pixel mode. The chip has been built in an 8-m...

  18. 3D silicon pixel detectors for the High-Luminosity LHC

    CERN Document Server

    Lange, J; Cavallaro, E; Förster, F; Grinstein, S; Paz, I López; Manna, M; Pellegrini, G; Quirion, D; Terzo, S; Furelos, D Vázquez

    2016-01-01

    3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are based on 50x250 um2 large pixels connected to the FE-I4 readout chip. Detectors of this generation were irradiated to HL-LHC fluences and demonstrated excellent radiation hardness with operational voltages as low as 180 V and power dissipation of 12--15 mW/cm2 at a fluence of about 1e16 neq/cm2, measured at -25 degree C. Moreover, to cope with the higher occupancies expected at the HL-LHC, a first run of a new generation of 3D detectors designed for the HL-LHC was produced at CNM with small pixel sizes of 50x50 and 25x100 um2, matched to the FE-I4 chip. They demonstrated a good performance in the laboratory and in beam tests with hit efficiencies of about 97% at already 1--2V before irradiation.

  19. Development of Micromegas-like gaseous detectors using a pixel readout chip as collecting anode

    International Nuclear Information System (INIS)

    This thesis reports on the fabrication and test of a new gaseous detector with a very large number of readout channels. This detector is intended for measuring the tracks of charged particles with an unprecedented sensitivity to single electrons of almost 100 %. It combines a metal grid for signal amplification called the Micromegas with a pixel readout chip as signal collecting anode and is dubbed GridPix. GridPix is a potential candidate for a sub-detector at a future electron linear collider (ILC) foreseen to work in parallel with the LHC around 2020--2030. The tracking capability of GridPix is best exploited if the Micromegas is integrated on the pixel chip. This integrated grid is called InGrid and is precisely fabricated by wafer post-processing. The various steps of the fabrication process and the measurements of its gain, energy resolution and ion back-flow property are reported in this document. Studies of the response of the complete detector formed by an InGrid and a TimePix pixel chip to X-rays and cosmic particles are also presented. In particular, the efficiency for detecting single electrons and the point resolution in the pixel plane are measured. Implications for a GridPix detector at ILC are discussed. (author)

  20. Design Optimization of Pixel Structure for α-Si based Uncooled Infrared Detector

    Directory of Open Access Journals (Sweden)

    Sudha Gupta

    2013-11-01

    Full Text Available In this paper authors present the design and simulation results achieved for pixel structure of amorphous Si (α-Si based bolometer array. Most uncooled IR detectors in the world are based on VOx material. But this is not a standard material in IC technology and has many inherent disadvantages. The α-Si, an alternative material with high TCR is becoming as popular. However, large TCR values, in this material are achieved only in films of high resistivity. To achieve TCR value more than 2.5%/K, α-Si film resistivity is ~ 80 ohms-cm. This gives rise to very large pixel resistance of the order of 100 Mega ohms depending upon the design of the leg structure. This high pixel resistance causes very large noise and hence lower sensitivity. If leg width or membrane thickness is increased in order to reduce the pixel resistance, then this results in higher thermal conductance which also decreases sensitivity. To overcome this problem, pixel structure is so designed that within a pixel, only part of the electrical conduction is through α-Si and rest is through metal. Simulation using Coventorware software has been done to optimize pixel resistance as well as thermal conductance through legs so that maximum sensitivity could be obtained. Optimization is also carried out in order to reduce sensitivity of pixel resistance to variation in material resistivity.

  1. Pixel detectors for use in retina neurophysiology studies

    CERN Document Server

    Cunningham, W; Chichilnisky, E J; Horn, M; Litke, A M; Mathieson, K; McEwan, F A; Melone, J; O'Shea, V; Rahman, M; Smith, K M

    2003-01-01

    One area of major inter-disciplinary co-operation is between the particle physics and bio-medical communities. The type of large detector arrays and fast electronics developed in laboratories like CERN are becoming used for a wide range of medical and biological experiments. In the present work fabrication technology developed for producing semiconductor radiation detectors has been applied to produce arrays which have been used in neuro-physiological experiments on retinal tissue. We have exploited UVIII, a low molecular weight resist, that has permitted large area electron beam lithography. This allows the resolution to go below that of conventional photolithography and hence the production of densely packed similar to 500 electrode arrays with feature sizes down to below 2 mum. The neural signals from significant areas of the retina may thus be captured.

  2. Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x/γ-ray detectors

    International Nuclear Information System (INIS)

    In this paper we report on the strong impact of the concentration of uncompensated impurities on the detection efficiency of CdTe and Cd0.9Zn0.1Te Schottky diodes. The results of our study explain the observed poor detection properties of some Cd0.9Zn0.1Te detectors with resistivity and lifetime of carriers comparable to those of good CdTe detectors. We show that the concentration of uncompensated impurities in a highly efficient CdTe Schottky diode detector is several orders of magnitude higher than that of a CdZnTe, which does not register the gamma spectra of commonly used isotopes (59–662 keV) by using photoelectric measurements. The significant difference of the concentration of uncompensated impurities between CdTe and Cd0.9Zn0.1Te crystals is confirmed by our study of the temperature change of the resistivity and of the Fermi level energy. The degree of compensation of the donor complex, responsible for the electrical conductivity of the material, is much lower in the CdTe crystal compared to that in the Cd0.9Zn0.1Te crystal. The calculations of the detection efficiency of x/γ-radiation by a Schottky diode result in a dependence on the concentration of uncompensated impurities described by a curve with a pronounced maximum. The position of this maximum occurs at a concentration of uncompensated impurities which ranges from 3 × 1010 to 3 × 1012 cm−3 depending on the registered photon energy of x/γ-rays and on the lifetime of the charge carriers. Our measurements and calculations lead to the conclusion that the concentration of uncompensated impurities in this range is a necessary condition for the effective operation of x- and γ-ray Schottky diode detectors based on CdTe and Cd1−xZnxTe crystals

  3. Studies for the detector control system of the ATLAS pixel at the HL-LHC

    CERN Document Server

    Püllen, L; Boek, J; Kersten, S; Kind, P; Mättig, P; Zeitnitz, C

    2012-01-01

    experiment will be replaced completely. As part of this redesign there will also be a new pixel detector. This new pixel detector requires a control system which meets the strict space requirements for electronics in the ATLAS experiment. To accomplish this goal we propose a DCS (Detector Control System) network with the smallest form factor currently available. This network consists of a DCS chip located in close proximity to the interaction point and a DCS controller located in the outer regions of the ATLAS detector. These two types of chips form a star shaped network with several DCS chips being controlled by one DCS controller. Both chips are manufactured in deep sub-micron technology. We present prototypes with emphasis on studies concerning single event upsets.

  4. Test of a fine pitch SOI pixel detector with laser beam

    CERN Document Server

    Liu, Yi; Ju, Xudong; Ouyang, Qun

    2015-01-01

    A fine pitch pixel detector, developed on SOI (Silicon on Insulator) technology, has been tested under the illumination of infrared laser pulses. As an alternative way beside particel beam test, the laser pulses are tuned to very short duration and small transverse profile to simulate tracks of MIPs (Minimum Ionization Particles) in silicon. Hit cluster size and substrate depletion characteristics of this SOI detector are obtained. When focused laser pulses propagate through SOI detector perpendicularly to its surface, the hit cluster is measured, and most of signal charges are collected directly by the seed pixel. The signal amplitude as a function of applied bias voltage has been measured on this SOI detector for the first time, which helps us better understand of depletion characteristics.

  5. Characterisation and compensation of magnetic distortions for the pixel Hybrid Photon Detectors of the LHCb RICH

    CERN Document Server

    Aglieri Rinella, G; Forty, R; Gys, T; Patel, M; Piedigrossi, D; Van Lysebetten, A

    2005-01-01

    The LHCb experiment at LHC, optimised for the study of CP violation, has two RICH detectors to provide particle identification in the momentum range 2–100 GeV=c. The stringent requirements on the photon detectors are met by the custom-made pixel Hybrid Photon Detector. The photon detectors need to operate in the fringe field of the LHCb dipole magnet which will produce distortions of the image detected on the pixel chip which is encapsulated inside the HPD. This paper reports on the experimental characterisation of the image distortions caused by an external magnetic flux density. These measurements allow for the development of a parameterisation of the effects and a compensation algorithm, which are also presented.

  6. Silicon micro-fluidic cooling for NA62 GTK pixel detectors

    CERN Document Server

    Romagnoli, G; Brunel, B; Catinaccio, A; Degrange, J; Mapelli, A; Morel, M; Noel, J; Petagna, P

    2015-01-01

    Silicon micro-channel cooling is being studied for efficient thermal management in application fields such as high power computing and 3D electronic integration. This concept has been introduced in 2010 for the thermal management of silicon pixel detectors in high energy physics experiments. Combining the versatility of standard micro-fabrication processes with the high thermal efficiency typical of micro-fluidics, it is possible to produce effective thermal management devices that are well adapted to different detector configurations. The production of very thin cooling devices in silicon enables a minimization of material of the tracking sensors and eliminates mechanical stresses due to the mismatch of the coefficient of thermal expansion between detectors and cooling systems. The NA62 experiment at CERN will be the first high particle physics experiment that will install a micro-cooling system to perform the thermal management of the three detection planes of its Gigatracker pixel detector.

  7. Radiation-Hard Opto-Link for the Atlas Pixel Detector

    OpenAIRE

    Gan, K. K.

    2004-01-01

    The on-detector optical link of the ATLAS pixel detector contains radiation-hard receiver chips to decode bi-phase marked signals received on PIN arrays and data transmitter chips to drive VCSEL arrays. The components are mounted on hybrid boards (opto-boards). We present results from the opto-boards and from irradiation studies with 24 GeV protons up to 33 Mrad (1.2 x 10^15 p/cm^2).

  8. 3 mega-pixel InSb detector with 10μm pitch

    Science.gov (United States)

    Gershon, G.; Albo, A.; Eylon, M.; Cohen, O.; Calahorra, Z.; Brumer, M.; Nitzani, M.; Avnon, E.; Aghion, Y.; Kogan, I.; Ilan, E.; Shkedy, L.

    2013-06-01

    SCD has developed a new 1920x1536 / 10 μm digital Infrared detector for the MWIR window named Blackbird. The Blackbird detector features a Focal Plane Array (FPA) that incorporates two technological building blocks developed over the past few years. The first one is a 10 μm InSb pixel based on the matured planar technology. The second building block is an innovative 10 μm ReadOut Integrated Circuit (ROIC) pixel. The InSb and the ROIC arrays are connected using Flip-Chip technology by means of indium bumps. The digital ROIC consists a matrix of 1920x1536 pixels and has an analog to digital (A/D) converter per-channel (total of 1920x2 A/Ds). It allows for full frame readout at a high frame rate of up to 120 Hz. Such an on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The ROIC power consumption at maximum bandwidth is less than 400 mW. It features a wide range of pixel-level functionality such as several conversion gain options and a 2x2 pixel binning. The ROIC design makes use of the advanced and matured CMOS technology, 0.18 μm, which allows for high functionality and relatively low power consumption. The FPA is mounted on a Cold-Finger by a specially designed ceramic substrate. The whole assembly is housed in a stiffened Dewar that withstands harsh environmental conditions while minimizing the environment heat load contribution to the heat load of the detector. The design enables a 3-megapixel detector with overall low size, weight, and power (SWaP) with respect to comparable large format detectors. In this work we present in detail the characteristic performance of the new Blackbird detector.

  9. Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

    Science.gov (United States)

    Elbakri, I A; McIntosh, B J; Rickey, D W

    2009-03-21

    We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result. PMID:19242050

  10. Development and characterization of a DEPFET pixel prototype system for the ILC vertex detector

    International Nuclear Information System (INIS)

    For the future TeV-scale linear collider ILC (International Linear Collider) a vertex detector of unprecedented performance is needed to fully exploit its physics potential. By incorporating a field effect transistor into a fully depleted sensor substrate the DEPFET (Depleted Field Effect Transistor) sensor combines radiation detection and in-pixel amplification. For the operation at a linear collider the excellent noise performance of DEPFET pixels allows building very thin detectors with a high spatial resolution and a low power consumption. With this thesis a prototype system consisting of a 64 x 128 pixels sensor, dedicated steering and readout ASICs and a data acquisition board has been developed and successfully operated in the laboratory and under realistic conditions in beam test environments at DESY and CERN. A DEPFET matrix has been successfully read out using the on-chip zero-suppression of the readout chip CURO 2. The results of the system characterization and beam test results are presented. (orig.)

  11. TSV last for hybrid pixel detectors: Application to particle physics and imaging experiments

    CERN Document Server

    Henry, D; Berthelot, A; Cuchet, R; Chantre, C; Campbell, M

    Hybrid pixel detectors are now widely used in particle physics experiments and at synchrotron light sources. They have also stimulated growing interest in other fields and, in particular, in medical imaging. Through the continuous pursuit of miniaturization in CMOS it has been possible to increase the functionality per pixel while maintaining or even shrinking pixel dimensions. The main constraint on the more extensive use of the technology in all fields is the cost of module building and the difficulty of covering large areas seamlessly [1]. On another hand, in the field of electronic component integration, a new approach has been developed in the last years, called 3D Integration. This concept, based on using the vertical axis for component integration, allows improving the global performance of complex systems. Thanks to this technology, the cost and the form factor of components could be decreased and the performance of the global system could be enhanced. In the field of radiation imaging detectors the a...

  12. Simulation of active-edge pixelated CdTe radiation detectors

    Science.gov (United States)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  13. Development and characterization of a DEPFET pixel prototype system for the ILC vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Kohrs, Robert

    2008-09-15

    For the future TeV-scale linear collider ILC (International Linear Collider) a vertex detector of unprecedented performance is needed to fully exploit its physics potential. By incorporating a field effect transistor into a fully depleted sensor substrate the DEPFET (Depleted Field Effect Transistor) sensor combines radiation detection and in-pixel amplification. For the operation at a linear collider the excellent noise performance of DEPFET pixels allows building very thin detectors with a high spatial resolution and a low power consumption. With this thesis a prototype system consisting of a 64 x 128 pixels sensor, dedicated steering and readout ASICs and a data acquisition board has been developed and successfully operated in the laboratory and under realistic conditions in beam test environments at DESY and CERN. A DEPFET matrix has been successfully read out using the on-chip zero-suppression of the readout chip CURO 2. The results of the system characterization and beam test results are presented. (orig.)

  14. The Pixel Detector of the ATLAS Experiment for the Run-2 at the Large Hadron Collider

    CERN Document Server

    Guescini, F; The ATLAS collaboration

    2014-01-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radial distance of 3.3 cm from the beam axis. The realization of the IBL required the development of several new technologies and solutions in order to overcome the challenges introduced by the extreme environment and working conditions, such as the high radiation levels, the high pixel occupancy and the need of an exceptionally low material budget. Two silicon sensor technologies have been adopted for the IBL modules: planar n-in-n and 3D. Both of these are connected via bump bonding to the new generation 130 nm IBM CMOS FE-I4 ...

  15. Near video-rate linear Stokes imaging with single-pixel detectors

    International Nuclear Information System (INIS)

    In this work we demonstrate a polarization sensitive computational imaging system based on a digital micro-mirror device (DMD) and several single-pixel photodetectors. By taking advantage of computational imaging techniques, the light measured by each single-pixel detector can reconstruct a 2D image for a specific linear polarization state. Using the rapid 22 kHz frame-rate of the DMD to continuously project a series of spatially orthogonal illumination patterns, near video-rate reconstructions can be achieved. In addition we extend this approach to provide full-colour images through a process of sequential colour selection (RGB). Taking the difference between photodetector signals from orthogonal linear polarization states, we obtain images corresponding to the linear Stokes parameters. We apply this rapid polarization sensitive imaging system to inert and biological material. Since the spatial information in the images reconstructed by this approach are determined by the projection system, rather than the detectors, the approach provides perfect pixel registration between the various polarization selective images and associated Stokes parameters. Furthermore, the use of single-pixel detectors and the large operational bandwidth afforded by DMD's means that the approach can readily be extended for imaging at wavelengths where detector arrays are unavailable or limited. (paper)

  16. Design and TCAD simulation of double-sided pixelated low gain avalanche detectors

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università di Trento, Via Sommarive 9, 38123 Trento (Italy); TIFPA INFN, Via Sommarive 14, 38123 Trento (Italy); Pancheri, Lucio [Dipartimento di Ingegneria Industriale, Università di Trento, Via Sommarive 9, 38123 Trento (Italy); TIFPA INFN, Via Sommarive 14, 38123 Trento (Italy); Boscardin, Maurizio [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); TIFPA INFN, Via Sommarive 14, 38123 Trento (Italy); Paternoster, Giovanni [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); Piemonte, Claudio [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); TIFPA INFN, Via Sommarive 14, 38123 Trento (Italy); Cartiglia, Nicolo; Cenna, Francesca [INFN Sezione di Torino, Via P. Giuria 2, 10125 Torino (Italy); Bruzzi, Mara [Dipartimento di FIsica e Astronomia, Università di Firenze, and INFN Sezione di Firenze, Via Giovanni Sansone 1, 50019 Sesto Fiorentino (Italy)

    2015-10-01

    We introduce a double-sided variant of low gain avalanche detector, suitable for pixel arrays without dead-area in between the different read-out elements. TCAD simulations were used to validate the device concept and predict its performance. Different design options and selected simulation results are presented, along with the proposed fabrication process.

  17. Study of planar pixel sensors hardener to radiations for the upgrade of the ATLAS vertex detector

    International Nuclear Information System (INIS)

    In this work, we present a study, using TCAD (Technology Computer-Assisted Design) simulation, of the possible methods of designing planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure, a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. (author)

  18. MÖNCH, a small pitch, integrating hybrid pixel detector for X-ray applications

    Science.gov (United States)

    Dinapoli, R.; Bergamaschi, A.; Cartier, S.; Greiffenberg, D.; Johnson, I.; Jungmann, J. H.; Mezza, D.; Mozzanica, A.; Schmitt, B.; Shi, X.; Tinti, G.

    2014-05-01

    PSI is developing several new detector families based on charge integration and analog readout (CI) to respond to the needs of X-ray free electron lasers (XFELs), where a signal up to ~ 104 photons impinging simultaneously on a pixel make single photon counting detectors unusable. MÖNCH is a novel hybrid silicon pixel detector where CI is combined with a challengingly small pixel size of 25 × 25 μm2. CI enables the detector to process several incoming photon simultaneously in XFEL applications. Moreover, due to the small pixel size, the charge produced by an impinging photon is often shared. In low flux experiments the analog information provided by single photons can be used either to obtain spectral information or to improve the position resolution by interpolation. Possible applications are resonant and non-resonant inelastic X-ray scattering or X-ray tomography with X-ray tubes. Two prototype ASICs were designed in UMC 110 nm technology. MÖNCH01 contains only some test cells used to assess technology performance and make basic design choices. MÖNCH02 is a fully functional, small scale prototype of 4 × 4 mm2, containing an array of 160 × 160 pixels. This array is subdivided in five blocks, each featuring a different pixel architecture. Two blocks have statically selectable preamplifier gains and target synchrotron applications. In low gain mode they should provide single photon sensitivity (at 6-12 keV) as well as a reasonable dynamic range for such a small area ( > 120 photons). In high gain they target high resolution, low flux experiments where charge sharing can be exploited to reach μm resolution. Three other architectures address possible uses at XFELs and implement automatic switching between two gains to increase the dynamic range, as well as input overvoltage control. The paper presents the MÖNCH project and first results obtained with the MÖNCH02 prototype.

  19. Simultaneous real-time visible and infrared video with single-pixel detectors.

    Science.gov (United States)

    Edgar, Matthew P; Gibson, Graham M; Bowman, Richard W; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J; Welsh, Stephen S; Padgett, Miles J

    2015-01-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a 'single-pixel camera' to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics. PMID:26001092

  20. 640 x 480 pixel uncooled infrared FPA with SOI diode detectors

    Science.gov (United States)

    Ueno, Masashi; Kosasayama, Yasuhiro; Sugino, Takaki; Nakaki, Yoshiyuki; Fujii, Yoshio; Inoue, Hiromoto; Kama, Keisuke; Seto, Toshiki; Takeda, Munehisa; Kimata, Masafumi

    2005-05-01

    This paper describes the structure and performance of a 25-micron pitch 640 x 480 pixel uncooled infrared focal plane array (IR FPA) with silicon-on-insulator (SOI) diode detectors. The uncooled IR FPA is a thermal type FPA that has a temperature sensor of single crystal PN junction diodes formed in an SOI layer. In the conventional pixel structure, the temperature sensor and two support legs for thermal isolation are made in the lower level of the pixel, and an IR absorbing structure is made in the upper pixel level to cover almost the entire pixel area. The IR absorption utilizes IR reflections from the lower level. Since the reflection from the support leg portions is not perfect due to the slits in the metal reflector, the reflection becomes smaller as the support leg section increases in reduced pixel pitches. In order to achieve high thermal isolation and high IR absorption simultaneously, we have developed a new pixel structure that has an independent IR reflector between the lower and upper levels. The structure assures perfect IR reflection and thus improves IR absorption. The FPA shows a noise equivalent temperature difference (NETD) of 40 mK (f/1.0) and a responsivity non-uniformity of less than 0.9%. The good uniformity is due to the high uniformity of the electrical characteristics of SOI diodes made of single crystal silicon (Si). We have confirmed that the SOI diodes architecture is suitable for large format uncooled IR FPAs.

  1. 18k Channels single photon counting readout circuit for hybrid pixel detector

    International Nuclear Information System (INIS)

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm×20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96×192 pixels with 100 μm×100 μm pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 μW/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 μV/e− and the equivalent noise charge is 168 e− rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  2. 18k Channels single photon counting readout circuit for hybrid pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Maj, P., E-mail: piotr.maj@agh.edu.pl [AGH University of Science and Technology, Department of Measurements and Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Grybos, P.; Szczygiel, R.; Zoladz, M. [AGH University of Science and Technology, Department of Measurements and Electronics, Al. Mickiewicza 30, 30-059 Krakow (Poland); Sakumura, T.; Tsuji, Y. [X-ray Analysis Division, Rigaku Corporation, Matsubara, Akishima, Tokyo 196-8666 (Japan)

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm Multiplication-Sign 20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96 Multiplication-Sign 192 pixels with 100 {mu}m Multiplication-Sign 100 {mu}m pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 {mu}W/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 {mu}V/e{sup -} and the equivalent noise charge is 168 e{sup -} rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  3. 18k Channels single photon counting readout circuit for hybrid pixel detector

    Science.gov (United States)

    Maj, P.; Grybos, P.; Szczygiel, R.; Zoladz, M.; Sakumura, T.; Tsuji, Y.

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm×20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96×192 pixels with 100 μm×100 μm pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 μW/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 μV/e- and the equivalent noise charge is 168 e- rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  4. Uncooled infrared detector with 12μm pixel pitch video graphics array

    Science.gov (United States)

    Endoh, Tsutomu; Tohyama, Shigeru; Yamazaki, Takao; Tanaka, Yutaka; Okuyama, Kuniyuki; Kurashina, Seiji; Miyoshi, Masaru; Katoh, Kouji; Yamamoto, Takashi; Okuda, Yuuhi; Sasaki, Tokuhito; Ishizaki, Haruo; Nakajima, Tomohiko; Shinoda, Kentaro; Tsuchiya, Tetsuo

    2013-06-01

    Uncooled infrared detectors with 12μm pixel pitch video graphics array (VGA) have been developed. To improve the signal to noise ratio (SNR) for 12μm pixel pitch, a highly sensitive bolometer material, an advanced pixel structure for thermal isolation and a newly designed read-out IC (ROIC) have been also developed. The bolometer material has been improved by using vanadium niobate. Over a wide range of temperature, temperature coefficient of resistance (TCR) is achieved higher level than -3.6%/K, which is 2 times higher than that for the conventional bolometer material. For thermal isolation, thermal conductance (Gth) value for the new pixel structure, fabricated by using triple level sacrificial layer process, is estimated to be 5nW/K, which is 1/5 times lower than that for the conventional pixel structure. On the other hand, since the imaging area is reduced by the pixel pitch, the uniformity of pixel can be improved. This enables to remove the non-uniformity correction (NUC) circuit in the ROIC. Removal of this circuit is effective for low power and low noise. This 12μm pixel pitch VGA detector is packaged in a compact (24 × 24 × 6.5 mm) and lightweight (11g) ceramic package. In addition, it has been incorporated in a newly developed prototype miniature imager. The miniature imager has dimension of 25(H) ×25(W) ×28(L) mm and weight of 30g. This imager is compact and small enough to fit in your hand. Hereafter, this imager is greatly expected to be applied to mobile systems.

  5. A semi-absolute passive non-destructive assay technique for the verification of uranium oxide powder cans using a miniature CdZnTe detector

    International Nuclear Information System (INIS)

    Measuring methods independent of nuclear material standards for 235U enrichment measurements have been developed. In the present work, a semi-absolute method for estimating the 235U enrichment in uranium oxide powder cans was investigated by using a miniature, quasi-hemispherical CdZnTe detector, having rectangular dimensions of 0.3x0.3x0.15 cm. By exploring the characteristic 185.7 keV γ-rays emitted in the decay of 235U, the assay of the uranium enrichment could be extended and improved. The method could be semi-absolute in the sense that it avoids the need to provide nuclear material standards, which are required for the conventional comparator method of assaying. The 235U enrichment and the number of the net measured activity of the 235U gamma rays peak at 185.7 keV may be put in a relation with the sample and the experimental setup parameters. Measuring setup was optimized in order to minimize electronic losses and background effects. The results of 235U enrichment estimation in comparison to fabrication data are listed, the precision achieved was about ±7%. The method used could touch important fields relevant to nuclear safeguards system verification and nuclear material control at production level

  6. Optimal fine ϕ-slicing for single-photon-counting pixel detectors

    International Nuclear Information System (INIS)

    Fine ϕ-slicing substantially improves scaling statistics and anomalous signal for diffraction data collection with hybrid pixel detectors. The data-collection parameters used in a macromolecular diffraction experiment have a strong impact on data quality. A careful choice of parameters leads to better data and can make the difference between success and failure in phasing attempts, and will also result in a more accurate atomic model. The selection of parameters has to account for the application of the data in various phasing methods or high-resolution refinement. Furthermore, experimental factors such as crystal characteristics, available experiment time and the properties of the X-ray source and detector have to be considered. For many years, CCD detectors have been the prevalent type of detectors used in macromolecular crystallography. Recently, hybrid pixel X-ray detectors that operate in single-photon-counting mode have become available. These detectors have fundamentally different characteristics compared with CCD detectors and different data-collection strategies should be applied. Fine ϕ-slicing is a strategy that is particularly well suited to hybrid pixel detectors because of the fast readout time and the absence of readout noise. A large number of data sets were systematically collected from crystals of four different proteins in order to investigate the benefit of fine ϕ-slicing on data quality with a noise-free detector. The results show that fine ϕ-slicing can substantially improve scaling statistics and anomalous signal provided that the rotation angle is comparable to half the crystal mosaicity

  7. Operational Experience of the ATLAS SemiConductor Tracker and Pixel Detector

    CERN Document Server

    Robinson, Dave; The ATLAS collaboration

    2016-01-01

    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  8. Fixed pattern deviations in Si pixel detectors measured using the Medipix 1 readout chip

    CERN Document Server

    Tlustos, L; Davidson, D; Heijne, Erik H M; Mikulec, B

    2003-01-01

    Dopant fluctuations and other defects in silicon wafers can lead to systematic errors in several parameters in particle or single-photon detection. In imaging applications non-uniformities in sensors or readout give rise to fixed pattern image noise and degradation of achievable spatial resolution for a given flux. High granularity pixel detectors offer the possibility to investigate local properties of the detector material on a microscopic scale. In this paper, we study fixed pattern detection fluctuations and detector inhomogeneities using the Medipix 1 readout chip. Low-frequency fixed pattern signal deviations due to dopant inhomogeneities can be separated from high-frequency deviations.

  9. X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

    CERN Document Server

    Schwarz, C; Göppert, R; Heijne, Erik H M; Ludwig, J; Meddeler, G; Mikulec, B; Pernigotti, E; Rogalla, M; Runge, K; Smith, K M; Snoeys, W; Söldner-Rembold, S; Watt, J

    1999-01-01

    The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (...

  10. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  11. The Belle II DEPFET pixel vertex detector. Development of a full-scale module prototype

    International Nuclear Information System (INIS)

    The Belle II experiment, which will start after 2015 at the SuperKEKB accelerator in Japan, will focus on the precision measurement of the CP-violation mechanism and on the search for physics beyond the Standard Model. A new detection system with an excellent spatial resolution and capable of coping with considerably increased background is required. To address this challenge, a pixel detector based on DEPFET technology has been proposed. A new all silicon integrated circuit, called Data Handling Processor (DHP), is implemented in 65 nm CMOS technology. It is designed to steer the detector and preprocess the generated data. The scope of this thesis covers DHP tests and optimization as well the development of its test environment, which is the first Full-Scale Module Prototype of the DEPFET Pixel Vertex detector.

  12. Low mass hybrid pixel detectors for the high luminosity LHC upgrade

    CERN Document Server

    Gonella, Laura; Desch, Klaus

    2013-11-11

    Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are dis...

  13. Analysis of Full Charge Reconstruction Algorithms for X-Ray Pixelated Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Baumbaugh, A.; /Fermilab; Carini, G.; /SLAC; Deptuch, G.; /Fermilab; Grybos, P.; /AGH-UST, Cracow; Hoff, J.; /Fermilab; Siddons, P., Maj.; /Brookhaven; Szczygiel, R.; /AGH-UST, Cracow; Trimpl, M.; Yarema, R.; /Fermilab

    2012-05-21

    Existence of the natural diffusive spread of charge carriers on the course of their drift towards collecting electrodes in planar, segmented detectors results in a division of the original cloud of carriers between neighboring channels. This paper presents the analysis of algorithms, implementable with reasonable circuit resources, whose task is to prevent degradation of the detective quantum efficiency in highly granular, digital pixel detectors. The immediate motivation of the work is a photon science application requesting simultaneous timing spectroscopy and 2D position sensitivity. Leading edge discrimination, provided it can be freed from uncertainties associated with the charge sharing, is used for timing the events. Analyzed solutions can naturally be extended to the amplitude spectroscopy with pixel detectors.

  14. Analysis of full charge reconstruction algorithms for x-ray pixelated detectors

    Energy Technology Data Exchange (ETDEWEB)

    Baumbaugh, A.; /Fermilab; Carini, G.; /SLAC; Deptuch, G.; /Fermilab; Grybos, P.; /AGH-UST, Cracow; Hoff, J.; /Fermilab; Siddons, P., Maj.; /Brookhaven; Szczygiel, R.; /AGH-UST, Cracow; Trimpl, M.; Yarema, R.; /Fermilab

    2011-11-01

    Existence of the natural diffusive spread of charge carriers on the course of their drift towards collecting electrodes in planar, segmented detectors results in a division of the original cloud of carriers between neighboring channels. This paper presents the analysis of algorithms, implementable with reasonable circuit resources, whose task is to prevent degradation of the detective quantum efficiency in highly granular, digital pixel detectors. The immediate motivation of the work is a photon science application requesting simultaneous timing spectroscopy and 2D position sensitivity. Leading edge discrimination, provided it can be freed from uncertainties associated with the charge sharing, is used for timing the events. Analyzed solutions can naturally be extended to the amplitude spectroscopy with pixel detectors.

  15. Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

    CERN Document Server

    Koyama, Akihiro; Takahashi, Hiroyuki; Orita, Tadashi; Arai, Yasuo; Kurachi, Ikuo; Miyoshi, Toshinobu; Nio, Daisuke; Hamasaki, Ryutaro

    2015-01-01

    To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.

  16. Prototype characterization of the JUNGFRAU pixel detector for SwissFEL

    Science.gov (United States)

    Mozzanica, A.; Bergamaschi, A.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Johnson, I.; Jungmann, J.; Maliakal, D.; Mezza, D.; Ruder, C.; Schaedler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2014-05-01

    The SwissFEL, a free electron laser (FEL) based next generation X-ray source, is being built at PSI. An XFEL poses several challenges to the detector development: in particular the single photon counting readout, a successful scheme in case of synchrotron sources, can not be used. At the same time the data quality of photon counting systems, i.e. the low noise and the high dynamic range, is essential from an experimental point of view. Detectors with these features are under development for the EU-XFEL in Hamburg, with the PSI SLS Detector group being involved in one of these efforts (AGIPD). The pulse train time structure of the EU-XFEL machine forces the need of in pixel image storage, resulting in pixel pitches in the 200 μm range. Since the SwissFEL is a 100 Hz repetition rate machine, this constrain is relaxed. For this reason, PSI is developing a 75 μm pitch pixel detector that, thanks to its automatic gain switching technique, will achieve single photon resolution and a high dynamic range. The detector is modular, with each module consisting of a 4 × 8 cm2 active sensor bump bonded to 8 readout ASICs (Application Specific Integrated Circuit), connected to a single printed circuit readout board with 10GbE link capabilities for data download. We have designed and tested a 48 × 48 pixel prototype produced in UMC110 nm technology. In this paper we present the general detector and ASIC design as well as the results of the prototype characterization measurements.

  17. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    International Nuclear Information System (INIS)

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results

  18. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    Science.gov (United States)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

    2015-01-01

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

  19. 3D Particle Track Reconstrution in a Single Layer Cadmium-Telluride Hybrid Active Pixel Detector

    CERN Document Server

    Filipenko, Mykhaylo; Anton, Gisela; Michel, Thilo

    2014-01-01

    In the past 20 years the search for neutrinoless double beta decay has driven many developements in all kind of detector technology. A new branch in this field are highly-pixelated semiconductor detectors - such as the CdTe-Timepix detectors. It compromises a cadmium-telluride sensor of 14 mm x 14 mm x 1 mm size with an ASIC which has 256 x 256 pixel of 55 \\textmu m pixel pitch and can be used to obtain either spectroscopic or timing information in every pixel. In regular operation it can provide a 2D projection of particle trajectories; however, three dimensional trajectories are desirable for neutrinoless double beta decay and other applications. In this paper we present a method to obtain such trajectories. The method was developed and tested with simulations that assume some minor modifications to the Timepix ASIC. Also, we were able to test the method experimentally and in the best case achieved a position resolution of about 90 \\textmu m with electrons of 4.4 GeV.

  20. Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

    CERN Document Server

    Tsung, Jieh-Wen; Hügging, Fabian; Kagan, Harris; Krüger, Hans; Wermes, Norbert

    2012-01-01

    CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 10$^{15}$ n$_{eq}$ cm$^{-2}$, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the chang...

  1. Studies on irradiated pixel detectors for the ATLAS IBL and HL-LHC upgrade

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00371978; Gößling, Claus; Pernegger, Heinz

    The constant demand for higher luminosity in high energy physics is the reason for the continuous effort to adapt the accelerators and the experiments. The upgrade program for the experiments and the accelerators at CERN already includes several expansion stages of the Large Hadron Collider (LHC) which will increase the luminosity and the energy of the accelerator. Simultaneously the LHC experiments prepare the individual sub-detectors for the increasing demands in the coming years. Especially the tracking detectors have to cope with fluence levels unprecedented for high energy physics experiments. Correspondingly to the fluence increases the impact of the radiation damage which reduces the life time of the detectors by decreasing the detector performance and efficiency. To cope with this effect new and more radiation hard detector concepts become necessary to extend the life time. This work concentrates on the impact of radiation damage on the pixel sensor technologies to be used in the next upgrade of the ...

  2. Accessing photon bunching with a photon number resolving multi-pixel detector.

    Science.gov (United States)

    Kalashnikov, Dmitry A; Tan, Si Hui; Chekhova, Maria V; Krivitsky, Leonid A

    2011-05-01

    In quantum optics and its applications, there is an urgent demand for photon-number resolving detectors. Recently, there appeared multi-pixel counters (MPPC) that are able to distinguish between 1,2,..10 photons. At the same time, strong coupling between different pixels (crosstalk) hinders their photon-number resolution. In this work, we suggest a method for `filtering out' the crosstalk effect in the measurement of intensity correlation functions. The developed approach can be expanded to the analysis of higher-order intensity correlations by using just a single MPPC. PMID:21643191

  3. High Dynamic Range X-ray Detector Pixel Architectures Utilizing Charge Removal

    CERN Document Server

    Weiss, Joel T; Philipp, Hugh T; Becker, Julian; Chamberlain, Darol; Purohit, Prafull; Tate, Mark W; Gruner, Sol M

    2016-01-01

    Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron sources and x-ray free electron lasers (XFELs). The pixels described herein build on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging. These new pixels boast several orders of magnitude improvement in maximum flux over the MM-PAD, which is capable of measuring a sustained flux in excess of 10$^{8}$ x-rays/pixel/second while maintaining sensitivity to smaller signals, down to single x-rays. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to t...

  4. SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, S [Wayne State University, Detroit, MI (United States); Kaye, W; Jaworski, J [H3D, Inc., Ann Arbor, MI (United States); He, Z [University of Michigan, Ann Arbor, MI (United States)

    2015-06-15

    Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinhole camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for

  5. Qualification measurements of the voltage supply system as well as conceptionation of a state machine for the detector control of the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The supply system and the control system of the ATLAS pixel detector represent important building blocks of the pixel detector. Corresponding studies of the supply system, which were performed within a comprehensive test system, the so-called system test, with nearly all final components and the effects on the pixel detector are object of this thesis. A further point of this thesis is the coordination and further development of the detector-control-system software under regardment of the different partial systems. A main topic represents thereby the conceptionation of the required state machine as interface for the users and the connection to the data acquisition system

  6. Low mass hybrid pixel detectors for the high luminosity LHC upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura

    2013-10-15

    Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are discussed using the upgrades of the ATLAS pixel detector as a case study.

  7. Low mass hybrid pixel detectors for the high luminosity LHC upgrade

    International Nuclear Information System (INIS)

    Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are discussed using the upgrades of the ATLAS pixel detector as a case study.

  8. Influence of electromagnetic interference on the analog part of hybrid Pixel detectors

    Science.gov (United States)

    Holik, M.; Kraus, V.; Granja, C.; Jakubek, J.; Georgiev, V.; Hromadka, M.; Skala, J.; Kubik, Z.

    2011-12-01

    The analog signal from the sensor of hybrid semiconductor pixel detectors is prone to electro-magnetic interference. The study and diagnosis of induced and common electro-magnetic coupling between the analog part and digital part of these devices is required. The influence of electro-magnetic interference was tested on the setup with a pixel detector Timepix or Medipix and a FITPix read-out interface. Measurements were carried out of external as well as internal interference. We evaluated the influence of both sources of electro-magnetic interference to the noise recorded by pixels. We measured the local spatial intensity distribution and frequency spectrum of the electro-magnetic field originating inside the readout chip during its own operation. In context of this test we exposed the detector chip to a locally generated artificial electro-magnetic field evaluating its sensitivity to induced interference. Consequently, the whole setup of the detector and read-out interface was exposed to a distant source of electro-magnetic radiation, during which we tested efficiency of the electro-magnetic shielding of various arrangements. Further, tests measured the coupling over power supply lines. In particular, the noise generated by the operation of the detector itself was determined. In addition, the detector sensitivity to deliberately induced noise was evaluated. By means of these tests weak points of the setup sensitive to the intrusion of electro-magnetic interference are revealed. When locations of susceptible places are identified proper methods can be applied to increase immunity of the detector setup against the electro-magnetic interference. Experiences gained are planned to be used in development of the EMI shielded version of the FITPIX interface shielded to electro-magnetic interference.

  9. Energy calibration of the pixels of spectral X-ray detectors.

    Science.gov (United States)

    Panta, Raj Kumar; Walsh, Michael F; Bell, Stephen T; Anderson, Nigel G; Butler, Anthony P; Butler, Philip H

    2015-03-01

    The energy information acquired using spectral X-ray detectors allows noninvasive identification and characterization of chemical components of a material. To achieve this, it is important that the energy response of the detector is calibrated. The established techniques for energy calibration are not practical for routine use in pre-clinical or clinical research environment. This is due to the requirements of using monochromatic radiation sources such as synchrotron, radio-isotopes, and prohibitively long time needed to set up the equipment and make measurements. To address these limitations, we have developed an automated technique for calibrating the energy response of the pixels in a spectral X-ray detector that runs with minimal user intervention. This technique uses the X-ray tube voltage (kVp) as a reference energy, which is stepped through an energy range of interest. This technique locates the energy threshold where a pixel transitions from not-counting (off) to counting (on). Similarly, we have developed a technique for calibrating the energy response of individual pixels using X-ray fluorescence generated by metallic targets directly irradiated with polychromatic X-rays, and additionally γ-rays from (241)Am. This technique was used to measure the energy response of individual pixels in CdTe-Medipix3RX by characterizing noise performance, threshold dispersion, gain variation and spectral resolution. The comparison of these two techniques shows the energy difference of 1 keV at 59.5 keV which is less than the spectral resolution of the detector (full-width at half-maximum of 8 keV at 59.5 keV). Both techniques can be used as quality control tools in a pre-clinical multi-energy CT scanner using spectral X-ray detectors. PMID:25051546

  10. Comparison of CCD, CMOS and Hybrid Pixel x-ray detectors: detection principle and data quality

    Science.gov (United States)

    Allé, P.; Wenger, E.; Dahaoui, S.; Schaniel, D.; Lecomte, C.

    2016-06-01

    We compare, from a crystallographic point of view, the data quality obtained using laboratory x-ray diffractometers equipped with a Molybdenum micro-source using different detector types: CCD, CMOS and XPAD hybrid pixel. First we give an overview of the working principle of these different detector types with a focus on their principal differences and their impact on the data quality. Then, using the example of an organic crystal, a comparison between the detector systems concerning the raw data statistics, the refinement agreement factors, the deformation electron density maps, and the residual density after multipolar refinement is presented. It is found that the data quality obtained with the XPAD detector is the best, even though the detection efficiency at the Mo energy (17.5 keV) is only 37% due to the Si-sensor layer thickness of 300 μm. Finally, we discuss the latest x-ray detector developments with an emphasis on the sensor material, where replacing Si by another material such as GaAs would yield detection efficiencies close to 100%, up to energies of 40 keV for hybrid pixel detectors.

  11. FPGA Based Data Read-Out System of the Belle 2 Pixel Detector

    CERN Document Server

    Levit, Dmytro; Greenwald, Daniel; Paul, Stephan

    2014-01-01

    The upgrades of the Belle experiment and the KEKB accelerator aim to increase the data set of the experiment by the factor 50. This will be achieved by increasing the luminosity of the accelerator which requires a significant upgrade of the detector. A new pixel detector based on DEPFET technology will be installed to handle the increased reaction rate and provide better vertex resolution. One of the features of the DEPFET detector is a long integration time of 20 {\\mu}s, which increases detector occupancy up to 3 %. The detector will generate about 2 GB/s of data. An FPGA-based two-level read-out system, the Data Handling Hybrid, was developed for the Belle 2 pixel detector. The system consists of 40 read-out and 8 controller modules. All modules are built in {\\mu}TCA form factor using Xilinx Virtex-6 FPGA and can utilize up to 4 GB DDR3 RAM. The system was successfully tested in the beam test at DESY in January 2014. The functionality and the architecture of the Belle 2 Data Handling Hybrid system as well a...

  12. Design optimization of Pixel Structure for α-Si based uncooled Infrared detector

    Directory of Open Access Journals (Sweden)

    Sudha Gupta

    2013-12-01

    Full Text Available In this paper authors present the design and simulation results achieved for pixel structure of amorphous Si (α-Si based bolometer array. Most uncooled IR detectors in the world are based on VOx material. But this is not a standard material in IC technology and has many inherent disadvantages. The α-Si, an alternative material with high TCR is becoming as popular. However, large TCR values, in this material are achieved only in films of high resistivity. To achieve TCR value more than 2.5%/K, α-Si film resistivity is ~ 80 ohms-cm. This gives rise to very large pixel resistance of the order of 100 Mega ohms depending upon the design of the leg structure. This high pixel resistance causes very large noise and hence lower sensitivity. If leg width or membrane thickness is increased in order to reduce the pixel resistance, then this results in higher thermal conductance which also decreases sensitivity. To overcome this problem, pixel structure is so designed that within a pixel, only part of the electrical conduction is through α-Si and rest is through metal. Simulation using Coventorware software has been done to optimize pixel resistance as well as thermal conductance through legs so that maximum sensitivity could be obtained. Optimization is also carried out in order to reduce sensitivity of pixel resistance to variation in material resistivity.Defence Science Journal, 2013, 63(6, pp.581-588, DOI:http://dx.doi.org/10.14429/dsj.63.5758

  13. Studies on irradiated pixel detectors for the ATLAS IBL and HL-LHC upgrade

    International Nuclear Information System (INIS)

    The constant demand for higher luminosity in high energy physics is the reason for the continuous effort to adapt the accelerators and the experiments. The upgrade program for the experiments and the accelerators at CERN already includes several expansion stages of the Large Hadron Collider (LHC) which will increase the luminosity and the energy of the accelerator. Simultaneously the LHC experiments prepare the individual sub-detectors for the increasing demands in the coming years. Especially the tracking detectors have to cope with fluence levels unprecedented for high energy physics experiments. Correspondingly to the fluence increases the impact of the radiation damage which reduces the life time of the detectors by decreasing the detector performance and efficiency. To cope with this effect new and more radiation hard detector concepts become necessary to extend the life time. This work concentrates on the impact of radiation damage on the pixel sensor technologies to be used in the next upgrade of the ATLAS Pixel Detector as well as for applications in the ATLAS Experiment at HL-LHC conditions. The sensors considered in this work include various designs based on silicon and diamond as sensor material. The investigated designs include a planar silicon pixel design currently used in the ATLAS Experiment as well as a 3D pixel design which uses electrodes penetrating the entire sensor material. The diamond designs implement electrodes similar to the design used by the planar technology with diamond sensors made out of single- and poly-crystalline material. To investigate the sensor properties characterization tests are performed before and after irradiation with protons or neutrons. The measurements are used to determine the interaction between the read-out electronics and the sensors to ensure the signal transfer after irradiation. Further tests focus on the sensor performance itself which includes the analysis of the leakage current behavior and the charge

  14. Vectors and submicron precision: redundancy and 3D stacking in silicon pixel detectors

    CERN Document Server

    Heijne, E H M; Wong, W; Idarraga, J; Visser, J; Jakubek, J; Leroy, C; Turecek, D; Visschers, J; Pospisil, S; Ballabriga, R; Vykydal, Z; Vermeulen, J; Plackett, R; Heijne, E H M; Llopart, X; Boltje, D; Campbell, M

    2010-01-01

    Measurements are shown of GeV pions and muons in two 300 mu m thick, Si Medipix pixel detector assemblies that are stacked on top of each other, with a 25 mu m thick brass foil in between. In such a radiation imaging semiconductor matrix with a large number of pixels along the particle trail, one can determine local space vectors for the particle trajectory instead of points. This improves pattern recognition and track reconstruction, especially in a crowded environment. Stacking of sensor planes is essential for resolving directional ambiguities. Signal charge sharing can be employed for measuring positions with submicron precision. In the measurements one notices accompanying `delta' electrons that emerge outside the particle trail, far beyond the boundaries of the 55 mu m pixel cells. The frequency of such corrupted position measurements is similar to one per 2.5mm of traversed Si.

  15. A CMOS analog front-end for silicon pixel detectors for γ imaging in medical application

    International Nuclear Information System (INIS)

    In recent works we presented the γ0, a chip expressely designed for γ imaging in medical application. The chip was designed to be the anode of an Integrated Silicon Pixel Array (ISPA) tube. This chip consists of a matrix of 1024 pixels each 135u by 135u, each pixel comprises a CSA, designed to handle signals of few thousand electrons, a shaper, a discriminator and a 10 bit event buffer. The chip addresses many issues that are essential for the realization of cheap and fast detectors. Particularly it integrates a DAC controlled biasing network and an energy discrimination system. In this work, we present the test system and the first test results for the γ0

  16. Study of the internal mechanisms of Pixelized Photon Detectors operated in Geiger-mode

    CERN Document Server

    Otono, H; Yamashita, S; Yoshioka, T; Yamamoto, K; Yamamura, K; Sato, K

    2008-01-01

    In the 1990s, a novel semiconductor photon-sensor operated in Geiger-mode was invented in Russia (Silicon PhotoMultiplier), which consists of many tiny pixels and has a single photon level sensitivity. Since then, various types of the sensor with this scheme, Pixelized Photon Detectors (PPD), have been developed in many places in the world. For instance, Hamamatsu Photonics K.K. in Japan produces the PPD as a Multi-Pixel Photon Counter. While the internal mechanisms of the PPD have been intensively studied in recent years, the existing models do not succeeded to fully reproduce the output characteristic, such as waveforms at low temperature. We have developed a new model with the transient multiplication and quenching of the realistic avalanche process and have succeeded in reproducing the output waveform of the PPD at various temperature. In this paper, we discuss our improved model.

  17. Towards hybrid pixel detectors for energy-dispersive or soft X-ray photon science.

    Science.gov (United States)

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Huthwelker, T; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2016-03-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications at free-electron lasers and synchrotron light sources. The JUNGFRAU 0.4 prototype presented here is specifically geared towards low-noise performance and hence soft X-ray detection. The design, geometry and readout architecture of JUNGFRAU 0.4 correspond to those of other JUNGFRAU pixel detectors, which are charge-integrating detectors with 75 µm × 75 µm pixels. Main characteristics of JUNGFRAU 0.4 are its fixed gain and r.m.s. noise of as low as 27 e(-) electronic noise charge (<100 eV) with no active cooling. The 48 × 48 pixels JUNGFRAU 0.4 prototype can be combined with a charge-sharing suppression mask directly placed on the sensor, which keeps photons from hitting the charge-sharing regions of the pixels. The mask consists of a 150 µm tungsten sheet, in which 28 µm-diameter holes are laser-drilled. The mask is aligned with the pixels. The noise and gain characterization, and single-photon detection as low as 1.2 keV are shown. The performance of JUNGFRAU 0.4 without the mask and also in the charge-sharing suppression configuration (with the mask, with a `software mask' or a `cluster finding' algorithm) is tested, compared and evaluated, in particular with respect to the removal of the charge-sharing contribution in the spectra, the detection efficiency and the photon rate capability. Energy-dispersive and imaging experiments with fluorescence X-ray irradiation from an X-ray tube and a synchrotron light source are successfully demonstrated with an r.m.s. energy resolution of 20% (no mask) and 14% (with the mask) at 1.2 keV and of 5% at 13.3 keV. The performance evaluation of the JUNGFRAU 0.4 prototype suggests that this detection system could be the starting point for a future detector development effort for either applications in the soft X-ray energy regime or for an energy

  18. Modeling and Analysis of Hybrid Pixel Detector Deficiencies for Scientific Applications

    Energy Technology Data Exchange (ETDEWEB)

    Fahim, Farah [Northwestern U. (main); Deptuch, Grzegorz W. [Fermilab; Hoff, James R. [Fermilab; Mohseni, Hooman [Northwestern U. (main)

    2015-08-28

    Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to

  19. Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

    Science.gov (United States)

    Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-01

    Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to

  20. Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

    International Nuclear Information System (INIS)

    Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec

  1. Pixelized Gas Micro-well Detectors for Advanced Gamma-ray Telescopes

    CERN Document Server

    Bloser, P F

    2004-01-01

    We describe possible applications of pixelized micro-well detectors (PMWDs) as three-dimensional charged particle trackers in advanced gamma-ray telescope concepts. A micro-well detector consists of an array of individual micro-patterned gas proportional counters opposite a planar drift electrode. When combined with pixelized thin film transistor (TFT) array readouts, large gas volumes may be imaged with very good spatial and energy resolution at reasonable cost. The third dimension is determined by timing the drift of the ionization electrons. The primary advantage of this technique is the very low scattering that the charged particles experience in a gas tracking volume, and the very accurate determination of the initial particle momenta that is thus achieved. We consider two applications of PMWDs to gamma-ray astronomy: 1) A tracker for an Advanced Compton Telescope (ACT) in which the recoil electron from the initial Compton scatter may be accurately tracked, greatly reducing the telescope's point spread f...

  2. A DC-DC converter based powering scheme for the upgrade of the CMS pixel detector

    Science.gov (United States)

    Feld, L.; Karpinski, W.; Klein, K.; Merz, J.; Sammet, J.; Wlochal, M.

    2011-11-01

    Around 2016, the pixel detector of the CMS experiment will be upgraded. The amount of current that has to be provided to the front-end electronics is expected to increase by a factor of two. Since the space available for cables is limited, this would imply unacceptable power losses in the currently installed supply cables. Therefore it is foreseen to place DC-DC converters close to the front-end electronics, allowing the provision of power at higher voltages, thereby facilitating the supply of the required currents with the present cable plant. This conference report introduces the foreseen powering scheme of the pixel upgrade. For the first time, system tests have been conducted with pixel barrel sensor modules, radiation tolerant DC-DC converters and the full power supply chain of the pixel detector. In addition, studies of the stability of different powering schemes under various conditions are summarized. In particular the impact of large and fast load variations, which are related to the bunch structure of the LHC beam, has been studied.

  3. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    Science.gov (United States)

    Gabrielli, A.; Backhaus, M.; Balbi, G.; Bindi, M.; Chen, S. P.; Falchieri, D.; Flick, T.; Hauck, S.; Hsu, S. C.; Kretz, M.; Kugel, A.; Lama, L.; Travaglini, R.; Wensing, M.

    2015-03-01

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called the Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL's off-detector DAQ system. The strategy for IBL ROD firmware development was three-fold: keeping as much of the Pixel ROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware, and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBL DAQ test bench using a realistic front-end chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBL ROD data path implementation, test on the test bench and ROD prototypes, will be reported. Recent Pixel collaboration efforts focus on finalizing hardware and firmware tests for the IBL. The plan is to approach a complete IBL DAQ hardware-software installation by the end of 2014.

  4. Calibration of ultra-thin hybrid pixel detector assemblies with Timepix readout ASICs

    CERN Document Server

    AUTHOR|(SzGeCERN)734627; Arfaoui, Samir; Benoit, Mathieu; Celeste, Damiano; Dannheim, Dominik; Pfleger, Florentina; Redford, Sophie

    2015-01-01

    In the framework of vertex detector R&D for a future Compact Linear Collider, the charac- terisation of ultra-thin hybrid pixel detector assemblies comprising 50 − 300 μm thick silicon sensors and Timepix readout ASICs is underway through beam tests at DESY and CERN. The work presented here supports the beam test data analysis by providing an energy calibra- tion of certain assemblies, so giving access to energy measurements in addition to recorded Time Over Threshold counts. Photons from a variety of radioactive sources and X-ray fluorescence are used to measure the response of the assemblies in the region of 3 − 60 keV. Threshold measurements are also performed. Global and pixel-by-pixel calibrations of the assemblies are parametrised and the uniformity of the response of the pixel matrices are discussed. Data samples recorded in beam tests are calibrated and the resulting energy spectra presented. For the first time calibration parameters are estimated for two 50 μm thick sensors which are forese...

  5. Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation

    CERN Document Server

    Andreazza, A; The ATLAS collaboration

    2012-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experi- ment at the Large Hadron Collider at CERN, providing high-resolution mea- surements of charged particle tracks in the high radiation environment close to the collision region. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. After three years of operation the detector performance is excellent: 96% of the pixels are opera- tional, at 3500 e threshold noise occupancy and efficiency exceed the design specification. The effect of radiation on the silicon sensor is measured and compared with model of radiation damage.

  6. Neutron imaging detector based on the muPIC micro-pixel chamber

    OpenAIRE

    Parker, J. D.; Hattori, K.; Fujioka, H.; Harada, M; Iwaki, S.; Kabuki, S.; Kishimoto, Y.; Kubo, H.; Kurosawa, S.; Miuchi, K; Nagae, T.; Nishimura, H; Oku, T; SAWANO, T.; Shinohara, T

    2012-01-01

    We have developed a prototype time-resolved neutron imaging detector employing the micro-pixel chamber (muPIC), a micro-pattern gaseous detector, coupled with a field programmable gate array-based data acquisition system for applications in neutron radiography at high-intensity neutron sources. The prototype system, with an active area of 10cm x 10cm and operated at a gas pressure of 2 atm, measures both the energy deposition (via time-over-threshold) and 3-dimensional track of each neutron-i...

  7. Development of high data readout rate pixel module and detector hybridization at Fermilab

    Energy Technology Data Exchange (ETDEWEB)

    Sergio Zimmermann et al.

    2001-03-20

    This paper describes the baseline design and a variation of the pixel module to handle the data rate required for the BTeV experiment at Fermilab. The present prototype has shown good electrical performance characteristics. Indium bump bonding is proven to be capable of successful fabrication at 50 micron pitch on real detectors. For solder bumps at 50 micron pitch, much better results have been obtained with the fluxless PADS processed detectors. The results are adequate for our needs and our tests have validated it as a viable technology.

  8. Development of high data readout rate pixel module and detector hybridization at Fermilab

    International Nuclear Information System (INIS)

    This paper describes the baseline design and a variation of the pixel module to handle the data rate required for the BTeV experiment at Fermilab. The present prototype has shown good electrical performance characteristics. Indium bump bonding is proven to be capable of successful fabrication at 50 micron pitch on real detectors. For solder bumps at 50 micron pitch, much better results have been obtained with the fluxless PADS processed detectors. The results are adequate for our needs and our tests have validated it as a viable technology

  9. Development of Fast and High Precision CMOS Pixel Sensors for an ILC Vertex Detector

    OpenAIRE

    Hu-Guo, Christine; Collaboration, IPHC; Collaboration, IRFU

    2010-01-01

    The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \\mu s read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly. Starting from the existing architecture and achieved performances, the paper will expose the details of how the sensor will be evo...

  10. XNAP: a hybrid pixel detector with nanosecond resolution for time resolved synchrotron radiation studies

    Science.gov (United States)

    Fajardo, P.; Baron, A. Q. R.; Dautet, H.; Davies, M.; Fischer, P.; Göttlicher, P.; Graafsma, H.; Hervé, C.; Rüffer, R.; Thil, C.

    2013-03-01

    The XNAP collaboration is constructing a hybrid pixel X-ray detector based on a monolithic silicon avalanche photodiode (APD) sensor array aiming at applications in synchrotron radiation facilities. The 2D detector is capable of identifying which individual electron bunch produces each detected X-ray photon, even when the storage ring operates in multibunch filling modes. This instrument is intended to be used in X-ray Photon Correlation Spectroscopy and Nuclear Resonance experiments and serve as a demonstrator for various kind of time resolved diffraction and scattering applications as well as a very high count rate device. The detector is a 1 kilopixel device with 280 μm pitch that implements both counting mode up to MHz frame rates and event-by-event readout with sub-nanosecond time resolution. The paper describes the detector design and some results obtained with small 4×4 pixel prototypes that have been built and measured to make and validate the most critical choices for the final detector.

  11. Active pixels of transverse field detector based on a charge preamplifier

    Science.gov (United States)

    Langfelder, G.; Buffa, C.; Longoni, A. F.; Pelamatti, A.; Zaraga, F.

    2012-01-01

    The Transverse Field Detector (TFD), a filter-less and tunable color sensitive pixel, is based on the generation of specific electric field configurations within a depleted Silicon volume. Each field configuration determines a set of three or more spectral responses that can be used for direct color acquisition at each pixel position. In order to avoid unpredictable changes of the electric field configuration during the single image capture, a specific active pixel (AP) has been designed. In this AP the dark- and photo-generated charge is not integrated directly on the junction capacitance, but, for each color, it is integrated on the feedback capacitance of a single-transistor charge pre-amplifier. The AP further includes a bias transistor, a reset transistor and a follower. In this work the design of such a pixel is discussed and the experimental results obtained on a 2x2 matrix of these active pixels are analyzed in terms of spectral response, linearity, noise, dynamic range and repeatability.

  12. Development of pixel detectors for the IBL and HL-LHC ATLAS experiment upgrade

    CERN Document Server

    Baselga Bacardit, Marta

    2016-03-18

    This thesis presents the development of advanced silicon technology detectors fabricated at CNM-Barcelona for High Energy Physics (HEP) experiments. The pixel size of the tracking silicon detectors for the upgrade of the HL-LHC will have to decrease in size in order to enhance the resolution in position for the measurements and they need to have lower occupancy for the electronics. The future experiments at CERN will cope with fuences up to 2 x 10^^16 neq/cm2, and the smaller 3D silicon detectors will have less trapping of the electron-holes generated in the bulk leading to a better performance under high radiation environment. This thesis studies silicon detectors fabricated at CNM-Barcelona applied to HEP experiments with two different kinds of novel technologies: 3D and Low Gain Avalanche Detectors (LGAD). The 3D detectors make it possible to reduce the size of the depleted region inside the detector and to work at lower voltages, whereas the LGAD detectors have an intrinsic gain which increases the collec...

  13. Fully 3D-Integrated Pixel Detectors for X-Rays

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, Grzegorz W. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Gabriella, Carini [SLAC National Accelerator Lab., Menlo Park, CA (United States); Enquist, Paul [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Grybos, Pawel [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Holm, Scott [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Lipton, Ronald [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Maj, Piotr [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Patti, Robert [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Siddons, David Peter [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Szczygiel, Robert [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Yarema, Raymond [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2016-01-01

    The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch, yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e- rms and a conversion gain of 69.5 μV/e- with 2.6 e- rms and 2.7 μV/e- rms pixel-to-pixel variations, respectively, were measured.

  14. Development of a detector control system for the serially powered ATLAS pixel detector at the HL-LHC

    International Nuclear Information System (INIS)

    In the years around 2020 the LHC will be upgraded to the HL-LHC. In terms of this upgrade, the ATLAS detector will also be upgraded. This also includes the pixel detector, the innermost of the sub-detectors in ATLAS. Thereby the powering concept of the pixel detector will be changed to reduce the material budget of the detector. From individual powering of each detector module, the concept changes to serial powering, where all modules of a powering group are connected in series. This change makes the development of a new detector control system (DCS) mandatory. Therefore, a new concept for the ATLAS pixel DCS is being developed at the University of Wuppertal. This concept is split into three paths: a safety path, a control path, and a diagnostics path. The safety path is a hard wired interlock system. The concept of this system will not differ significantly, compared to the interlock system of the current detector. The diagnostics path is embedded into the optical data read-out of the detector and will be used for detector tuning with high precision and granularity. The control path supervises the detector and provides a user interface to the hardware components. A concept for this path, including a prototype and proof-of-principle studies, has been developed in terms of this thesis. The control path consists of the DCS network, a read-out and controlling topology created by two types of ASICs: the DCS controller and the DCS chip. These ASICs measure and control all values, necessary for a safe detector operation in situ. This reduces the number of required cables and hence the material budget of the system. For the communication between these ASICs, two very fault tolerant bus protocols have been chosen: CAN bus carries data from the DCS computers, outside of the detector, to the DCS controllers at the edge of the pixel detector. For the communication between the DCS controller and the DCS chip, which is located close to each detector module, an enhanced I2C

  15. Development of a detector control system for the serially powered ATLAS pixel detector at the HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Puellen, Lukas

    2015-02-10

    In the years around 2020 the LHC will be upgraded to the HL-LHC. In terms of this upgrade, the ATLAS detector will also be upgraded. This also includes the pixel detector, the innermost of the sub-detectors in ATLAS. Thereby the powering concept of the pixel detector will be changed to reduce the material budget of the detector. From individual powering of each detector module, the concept changes to serial powering, where all modules of a powering group are connected in series. This change makes the development of a new detector control system (DCS) mandatory. Therefore, a new concept for the ATLAS pixel DCS is being developed at the University of Wuppertal. This concept is split into three paths: a safety path, a control path, and a diagnostics path. The safety path is a hard wired interlock system. The concept of this system will not differ significantly, compared to the interlock system of the current detector. The diagnostics path is embedded into the optical data read-out of the detector and will be used for detector tuning with high precision and granularity. The control path supervises the detector and provides a user interface to the hardware components. A concept for this path, including a prototype and proof-of-principle studies, has been developed in terms of this thesis. The control path consists of the DCS network, a read-out and controlling topology created by two types of ASICs: the DCS controller and the DCS chip. These ASICs measure and control all values, necessary for a safe detector operation in situ. This reduces the number of required cables and hence the material budget of the system. For the communication between these ASICs, two very fault tolerant bus protocols have been chosen: CAN bus carries data from the DCS computers, outside of the detector, to the DCS controllers at the edge of the pixel detector. For the communication between the DCS controller and the DCS chip, which is located close to each detector module, an enhanced I2C

  16. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    International Nuclear Information System (INIS)

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs

  17. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    Science.gov (United States)

    Esposito, M.; Anaxagoras, T.; Evans, P. M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Poludniowski, G.; Price, T.; Waltham, C.; Allinson, N. M.

    2015-06-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  18. High bandwidth pixel detector modules for the ATLAS Insertable B-Layer

    Energy Technology Data Exchange (ETDEWEB)

    Backhaus, Malte

    2014-01-15

    The investigation of the nature of the recently discovered electro-weak symmetry breaking mechanism of the standard model of particle physics as well as the search for physics beyond the standard model with the LHC require to collect even more data. To achieve this goal, the luminosity of the LHC will be increased in two steps. The increased luminosity results in serious challenges for the inner tracking systems of the experiments at the LHC. The ATLAS pixel detector will also be upgraded in a two stage program. During the shutdown in 2013 and 2014 a fourth hybrid pixel detector layer, the socalled Insertable B-Layer (IBL) is inserted inside the existing pixel detector. This thesis focuses on the characterization, performance measurement, and production quality assurance of the central sensitive elements of the IBL, the modules. This includes a full characterization of the readout chip (FE-I4) and of the assembled modules. A completely new inner tracking system is mandatory in ATLAS after the second luminosity increase in the shutdown of 2022 and 2023. The final chapter of this thesis introduces a new module concept that uses an industrial high voltage CMOS technology as sensor layer, which is capacitively coupled to the FE-I4 readout chip.

  19. System test and noise performance studies at the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Weingarten, J.

    2007-09-15

    The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

  20. High bandwidth pixel detector modules for the ATLAS Insertable B-Layer

    CERN Document Server

    Backhaus, Malte

    2014-02-19

    The investigation of the nature of the recently discovered electro-weak symmetry breaking mechanism of the standard model of particle physics as well as the search for physics beyond the standard model with the LHC require to collect even more data. To achieve this goal, the luminosity of the LHC will be increased in two steps. The increased luminosity results in serious challenges for the inner tracking systems of the experiments at the LHC. The ATLAS pixel detector will also be upgraded in a two stage program. During the shutdown in 2013 and 2014 a fourth hybrid pixel detector layer, the so-called Insertable B-Layer (IBL) is inserted inside the existing pixel detector. This thesis focuses on the characterization, performance measurement, and production quality assurance of the central sensitive elements of the IBL, the modules. This includes a full characterization of the readout chip (FE-I4) and of the assembled modules. A completely new inner tracking system is mandatory in ATLAS after the second luminosi...

  1. System test and noise performance studies at the ATLAS pixel detector

    International Nuclear Information System (INIS)

    The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

  2. Prototypes and system test stands for the Phase 1 upgrade of the CMS pixel detector

    Science.gov (United States)

    Hasegawa, S.

    2016-09-01

    The CMS pixel phase-1 upgrade project replaces the current pixel detector with an upgraded system with faster readout electronics during the extended year-end technical stop of 2016/2017. New electronics prototypes for the system have been developed, and tests in a realistic environment for a comprehensive evaluation are needed. A full readout test stand with either the same hardware as used in the current CMS pixel detector or the latest prototypes of upgrade electronics has been built. The setup enables the observation and investigation of a jitter increase in the data line associated with trigger rate increases. This effect is due to the way in which the clock and trigger distribution is implemented in CMS. A new prototype of the electronics with a PLL based on a voltage controlled quartz crystal oscillator (QPLL), which works as jitter filter, in the clock distribution path was produced. With the test stand, it was confirmed that the jitter increase is not seen with the prototype, and also good performance was confirmed at the expected detector operation temperature (-20 °C).

  3. Applications of pixellated GaAs X-ray detectors in a synchrotron radiation beam

    CERN Document Server

    Watt, J; Campbell, M; Mathieson, K; Mikulec, B; O'Shea, V; Passmore, M S; Schwarz, C; Smith, K M; Whitehill, C

    2001-01-01

    Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and synchrotron radiation beam applications. Based on previous work in the CERN RD19 and the UK IMPACT collaborations, a photon counting GaAs pixel detector (PCD) has been used in an X-ray powder diffraction experiment. The device consists of a 200 mu m thick SI-LEC GaAs detector patterned in a 64*64 array of 170 mu m pitch square pixels, bump-bonded to readout electronics operating in single photon counting mode. Intensity peaks in the powder diffraction pattern of KNbO/sub 3/ have been resolved and compared with results using the standard scintillator, and a PCD predecessor (the Omega 3). The PCD shows improved speed, dynamic range, 2-D information and comparable spatial resolution to the standard scintillator based systems. It also overcomes the severe dead time limitations of the Omega 3 by using a shutter based acquisition mode. A brief demonstration of the possibilities of the system for dental radiography and...

  4. Applications of pixellated GaAs X-ray detectors in a synchrotron radiation beam

    Energy Technology Data Exchange (ETDEWEB)

    Watt, J. E-mail: j.watt@physics.gla.ac.uk; Bates, R.; Campbell, M.; Mathieson, K.; Mikulec, B.; O' Shea, V.; Passmore, M-S.; Schwarz, C.; Smith, K.M.; Whitehill, C

    2001-03-11

    Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and synchrotron radiation beam applications. Based on previous work in the CERN RD19 and the UK IMPACT collaborations, a photon counting GaAs pixel detector (PCD) has been used in an X-ray powder diffraction experiment. The device consists of a 200 {mu}m thick SI-LEC GaAs detector patterned in a 64x64 array of 170 {mu}m pitch square pixels, bump-bonded to readout electronics operating in single photon counting mode. Intensity peaks in the powder diffraction pattern of KNbO{sub 3} have been resolved and compared with results using the standard scintillator, and a PCD predecessor (the {omega}3). The PCD shows improved speed, dynamic range, 2-D information and comparable spatial resolution to the standard scintillator based systems. It also overcomes the severe dead time limitations of the {omega}3 by using a shutter based acquisition mode. A brief demonstration of the possibilities of the system for dental radiography and image processing are given, showing a marked reduction in patient dose and dead time compared with film.

  5. Applications of pixellated GaAs X-ray detectors in a synchrotron radiation beam

    Science.gov (United States)

    Watt, J.; Bates, R.; Campbell, M.; Mathieson, K.; Mikulec, B.; O'Shea, V.; Passmore, M.-S.; Schwarz, C.; Smith, K. M.; Whitehill, C.; XIMAGE Project

    2001-03-01

    Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and synchrotron radiation beam applications. Based on previous work in the CERN RD19 and the UK IMPACT collaborations, a photon counting GaAs pixel detector (PCD) has been used in an X-ray powder diffraction experiment. The device consists of a 200 μm thick SI-LEC GaAs detector patterned in a 64×64 array of 170 μm pitch square pixels, bump-bonded to readout electronics operating in single photon counting mode. Intensity peaks in the powder diffraction pattern of KNbO 3 have been resolved and compared with results using the standard scintillator, and a PCD predecessor (the Ω3). The PCD shows improved speed, dynamic range, 2-D information and comparable spatial resolution to the standard scintillator based systems. It also overcomes the severe dead time limitations of the Ω3 by using a shutter based acquisition mode. A brief demonstration of the possibilities of the system for dental radiography and image processing are given, showing a marked reduction in patient dose and dead time compared with film.

  6. High bandwidth pixel detector modules for the ATLAS Insertable B-Layer

    International Nuclear Information System (INIS)

    The investigation of the nature of the recently discovered electro-weak symmetry breaking mechanism of the standard model of particle physics as well as the search for physics beyond the standard model with the LHC require to collect even more data. To achieve this goal, the luminosity of the LHC will be increased in two steps. The increased luminosity results in serious challenges for the inner tracking systems of the experiments at the LHC. The ATLAS pixel detector will also be upgraded in a two stage program. During the shutdown in 2013 and 2014 a fourth hybrid pixel detector layer, the socalled Insertable B-Layer (IBL) is inserted inside the existing pixel detector. This thesis focuses on the characterization, performance measurement, and production quality assurance of the central sensitive elements of the IBL, the modules. This includes a full characterization of the readout chip (FE-I4) and of the assembled modules. A completely new inner tracking system is mandatory in ATLAS after the second luminosity increase in the shutdown of 2022 and 2023. The final chapter of this thesis introduces a new module concept that uses an industrial high voltage CMOS technology as sensor layer, which is capacitively coupled to the FE-I4 readout chip.

  7. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Science.gov (United States)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  8. Modelling and simulation of pixelated photon counting X-ray detectors for imaging

    International Nuclear Information System (INIS)

    First of all the physics processes generating the energy deposition in the sensor volume are investigated. The spatial resolution limits of photon interactions and the range of secondary electrons are discussed. The signatures in the energy deposition spectrum in pixelated detectors with direct conversion layers are described. The energy deposition for single events can be generated by the Monte-Carlo-Simulation package ROSI. The basic interactions of photons with matter are evaluated, resulting in the ability to use ROSI as a basis for the simulation of photon counting pixel detectors with direct conversion. In the context of this thesis a detector class is developed to simulate the response of hybrid photon counting pixel detectors using high-Z sensor materials like Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs) in addition to silicon. To enable the realisation of such a simulation, the relevant physics processes and properties have to be implemented: processes in the sensor layer (provided by EGS4/LSCAT in ROSI), generation of charge carriers as electron hole pairs, diffusion and repulsion of charge carriers during drift and lifetime. Furthermore, several noise contributions of the electronics can be taken into account. The result is a detector class which allows the simulation of photon counting detectors. In this thesis the multiplicity framework is developed, including a formula to calculate or measure the zero frequency detective quantum efficiency (DQE). To enable the measurement of the multiplicity of detected events a cluster analysis program was developed. Random and systematic errors introduced by the cluster analysis are discussed. It is also shown that the cluster analysis method can be used to determine the averaged multiplicity with high accuracy. The method is applied to experimental data. As an example using the implemented detector class, the discriminator threshold dependency of the DQE and modulation transfer function is investigated in

  9. The color of X-rays: Spectral X-ray computed tomography using energy sensitive pixel detectors

    NARCIS (Netherlands)

    E.J. Schioppa

    2014-01-01

    Energy sensitive X-ray imaging detectors are produced by connecting a semiconductor sensor to a spectroscopic pixel readout chip. In this thesis, the applicability of such detectors to X-ray Computed Tomography (CT) is studied. A prototype Medipix based silicon detector is calibrated using X-ray flu

  10. Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

    Science.gov (United States)

    Whyntie, T.; Parker, B.

    2013-01-01

    The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

  11. Development of a discriminator grade CdZnTe detector for CBS system%背散射成像系统的甄别级CZT探测器特性研究与应用

    Institute of Scientific and Technical Information of China (English)

    郝魁红; 李炎钧; 赵林; 王化祥; 丁洪林

    2009-01-01

    为设计适用于康普顿背散射成像系统,通过分析成像系统及CdZnTe探测器性能,并考虑到相应核电子学电路的噪声特性,设计了甄别级CdZnTe探测器,并设计了相应的低噪声电荷灵敏前置放大器和主放大器.在常温下,5mm×5mm×5mm的甄别级CdZnTe探测器与核电子学电路系统对于662 keV的~(137)Cs源,其能量分辨率小于4%.%Detectors applied in Compton backscatter imaging and low-noise amplifier including charge-sensitive amplifier and main amplifier were developed,through analyzing the performances of CdZnTe detector and considering the noise characteristics of the circuits. At room temperature,energy resolution of the detection system with a 5 mm×5 mm×5 mm discriminator grade CdZnTe detector and nuclear electronic circuit is better than 4% to the 662 keV ~(137)Cs γ-ray.

  12. IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems

    CERN Document Server

    Limousin, O; Lugiez, F; Chipaux, Rémi; Delagnes, E; Dirks, B; Horeau, B

    2004-01-01

    Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20 degrees Celsius, these instruments will offer high spatial resolution (pixel size ranging from 300 x 300 square micrometers to few square millimeters), high spectral response and high detection efficiency. To reach these goals, reliable, highly integrated, low noise and low power consumption electronics is mandatory. Our group is currently developing a new ASIC detector front-end named IDeF-X, for modular spectro-imaging system based on the use of Cd(Zn)Te detectors. We present here the first version of IDeF-X which consists in a set of ten low noise charge sensitive preamplifiers (CSA). It has been processed with the standard AMS 0.35 micrometer CMOS technology. The CSA are designed to be DC coupled to detectors having a low dark current at room temperature. T...

  13. Characterization of CdTe and CdZnTe detectors for gamma-ray imaging applications

    Science.gov (United States)

    Verger, L.; Boitel, M.; Gentet, M. C.; Hamelin, R.; Mestais, C.; Mongellaz, F.; Rustique, J.; Sanchez, G.

    2001-02-01

    CEA-LETI in association with Bicron and Crismatec has been developing solid-state gamma camera technology based on CZT. The project included gamma camera head systems development including front-end electronics with an integrated circuit (ASIC), material growth, and detector fabrication and characterization. One feature of the work is the use of linear correlation between the amplitude and the fast rise time of the signal - which corresponds to the electron transit time in the detector, a development that was reported previously and which allows more than 80% of the 122 keV γ-photons incident on HPBM material to be recovered in a ±6.5% 2D window. In the current work, we summarize other methods to improve CZT detector performance and compare them with the Bi-Parametric Spectrum (BPS) method. The BPS method can also be applied as a diagnositic. BPS curve shapes are shown to vary with electric field, and with electron transport properties, and the correction algorithims are seen to be robust over a range of values. In addition, the technique is found to improve detectors from a variety of sources including some with special electrode geometries. In all cases, the BPS method improves efficiency (>75%) without degrading energy resolution (± 6.5% 2D window) even for a monolithic detector. The method does not overcome bulk inhomogeneity nor noise which comes from low resistivity.

  14. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja

    2011-09-14

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  15. Advanced numerical modeling and hybridization techniques for third-generation infrared detector pixel arrays

    Science.gov (United States)

    Schuster, Jonathan

    Infrared (IR) detectors are well established as a vital sensor technology for military, defense and commercial applications. Due to the expense and effort required to fabricate pixel arrays, it is imperative to develop numerical simulation models to perform predictive device simulations which assess device characteristics and design considerations. Towards this end, we have developed a robust three-dimensional (3D) numerical simulation model for IR detector pixel arrays. We used the finite-difference time-domain technique to compute the optical characteristics including the reflectance and the carrier generation rate in the device. Subsequently, we employ the finite element method to solve the drift-diffusion equations to compute the electrical characteristics including the I(V) characteristics, quantum efficiency, crosstalk and modulation transfer function. We use our 3D numerical model to study a new class of detector based on the nBn-architecture. This detector is a unipolar unity-gain barrier device consisting of a narrow-gap absorber layer, a wide-gap barrier layer, and a narrow-gap collector layer. We use our model to study the underlying physics of these devices and to explain the anomalously long lateral collection lengths for photocarriers measured experimentally. Next, we investigate the crosstalk in HgCdTe photovoltaic pixel arrays employing a photon-trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. The PT region drastically reduces the crosstalk; making the use of the PT structures not only useful to obtain broadband operation, but also desirable for reducing crosstalk, especially in small pitch detector arrays. Then, the power and flexibility of the nBn architecture is coupled with a PT structure to engineer spectrally filtering detectors. Last, we developed a technique to reduce the cost of large-format, high performance HgCdTe detectors by nondestructively screen-testing detector arrays prior

  16. Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

    CERN Document Server

    Fourches, Nicolas T; Chipaux, Rémi

    2014-01-01

    Silicon detectors have gained in popularity since silicon became a widely used micro/nanoelectronic semiconductor material. Silicon detectors are used in particle physics as well as imaging for pixel based detecting systems. Over the past twenty years a lot of experimental efforts have been focused on the effects of ionizing and non-ionizing radiation on silicon pixels. Some of this research was done in the framework of high luminosity particle physics experiments, along with radiation hardness studies of basic semiconductors devices. In its simplest form the semiconductor pixel detectors reduce to a PIN or PN structure partially or totally depleted, or in some MOS and APD (Avalanche PhotoDiode) structures. Bulk or surface defects affect considerably transport of free carriers. We propose guidelines for pixel design, which will be tested through a few pixel structures. This design method includes into the design the properties of defects. The electrical properties reduce to parameters, which can be introduced...

  17. ATLAS Pixel Detector ROD card from IBL towards Layers 2 and 1

    Science.gov (United States)

    Balbi, G.; Falchieri, D.; Gabrielli, A.; Lama, L.; Giangiacomi, N.; Travaglini, R.

    2016-01-01

    The incoming and future upgrades of LHC will require better performance by the data acquisition system, especially in terms of throughput due to the higher luminosity that is expected. For this reason, during the first shutdown of the LHC collider in 2013/14, the ATLAS Pixel Detector has been equipped with a fourth layer— the Insertable B-Layer or IBL—located at a radius smaller than the present three layers. To read out the new layer of pixels, with a smaller pixel size with respect to the other outer layers, a front end ASIC (FE-I4) was designed as well as a new off-detector read-out chain. The latter, accordingly to the structure of the other layers of pixels, is composed mainly of two 9U-VME read-out off-detector cards called the Back-Of-Crate (BOC) and Read-Out Driver (ROD). The ROD is used for data and event formatting and for configuration and control of the overall read-out electronics. After some prototyping samples were completed, a pre-production batch of 5 ROD cards was delivered with the final layout. Another production of 15 ROD cards was done in Fall 2013, and commissioning was completed in 2014. Altogether 14 cards are necessary for the 14 staves of the IBL detector, one additional card is required by the Diamond Beam Monitor (DBM), and additional spare ROD cards were produced for a total initial batch of 20 boards. This paper describes some integration tests that were performed and our plan to install the new DAQ chain for the layer 2, which is the outermost, and layer 1, which is external to the B-layer. This latter is the only layer that will not be upgraded to a higher readout speed. Rather, it will be switched off in the near future as it has too many damaged sensors that were not possible to rework. To do that, slices of the IBL read-out chain have been instrumented, and ROD performance is verified on a test bench mimicking a small-sized final setup. Thus, this contribution reports also how the adoption of the IBL ROD for ATLAS Pixel

  18. Multiplexed Readout for 1000-pixel Arrays of Microwave Kinetic Inductance Detectors

    CERN Document Server

    van Rantwijk, Joris; van Loon, Dennis; Yates, Stephen; Baryshev, Andrey; Baselmans, Jochem

    2015-01-01

    Microwave Kinetic Inductance Detectors (MKIDs) are the most attractive radiation detectors for far-infrared and sub-mm astronomy: They combine ultimate sensitivity with the possibility to create very large detector arrays, in excess of 10 000 pixels. This is possible by reading-out the arrays using RF frequency division multiplexing, which allows multiplexing ratios in excess of 1000 pixels per readout line. We describe a novel readout system for large arrays of MKIDs, operating in a 2 GHz band in the 4-8 GHz range. The readout, which is a combination of a digital front- and back-end and an analog up- and down-converter system, can read out up to 4000 detectors simultaneously with 1 kHz datarate. The system achieves a readout noise power spectral density of -98 dBc/Hz while reading 1000 carriers simultaneously, which scales linear with the number of carriers. We demonstrate that 4000 state-of-the-art Aluminium-NbTiN MKIDs can be read out without deteriorating their intrinsic performance.

  19. LePix—A high resistivity, fully depleted monolithic pixel detector

    International Nuclear Information System (INIS)

    The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 μm to obtain back illuminated sensors operated in full depletion mode. By back-processing the chip and collecting the charge from the full substrate it is hence possible to efficiently detect soft X-rays up to 10 keV. Test results from first successfully processed detectors will be presented and discussed

  20. The CT-PPS tracking system with 3D pixel detectors

    CERN Document Server

    Ravera, Fabio

    2016-01-01

    The CMS-TOTEM Precision Proton Spectrometer (CT-PPS) detector will be installed in Roman pots (RP) positioned on either side of CMS, at about 200 m from the interaction point. This detector will measure forward leading protons, allowing detailed studies of diffractive physics and central exclusive production in standard LHC running conditions. An essential component of the CT-PPS apparatus is the tracking system, which consists of two detector stations per arm equipped with six 3D silicon pixel-sensor modules, each read out by six PSI46dig chips. The front-end electronics has been designed to fulfill the mechanical constrains of the RP and to be compatible as much as possible with the readout chain of the CMS pixel detector. The tracking system is currently under construction and will be installed by the end of 2016. In this contribution the final design and the expected performance of the CT-PPS tracking system will be presented. A summary of the studies performed, before and after irradiation, on the 3D det...