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Sample records for cdte solar cells

  1. Temperature dependent electroreflectance study of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Raadik, T., E-mail: taavi.raadik@ttu.ee [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J.; Josepson, R.; Hiie, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Potlog, T.; Spalatu, N. [Moldova State University, A. Mateevici str. 60, MD-2009 Chisinau (Moldova, Republic of)

    2013-05-01

    Cadmium telluride is a promising material for large scale photovoltaic applications. In this paper we study CdS/CdTe heterojunction solar cells with electroreflectance spectroscopy. Both CdS and CdTe layers in solar cells were grown sequentially without intermediate processing by the close-space sublimation method. Electroreflectance measurements were performed in the temperature range of T = 100–300 K. Two solar cells were investigated with conversion efficiencies of 4.1% and 9.6%. The main focus in this work was to study the temperature dependent behavior of the broadening parameter and the bandgap energy of CdTe thin film in solar cells. Room temperature bandgap values of CdTe were E{sub g} = 1.499 eV and E{sub g} = 1.481 eV for higher and lower efficiency solar cells, respectively. Measured bandgap energies are lower than for single crystal CdTe. The formation of CdTe{sub 1−x}S{sub x} solid solution layer on the surface of CdTe is proposed as a possible cause of lower bandgap energies. - Highlights: ► Temperature dependent electroreflectance measurements of CdS/CdTe solar cells ► Investigation of junction properties between CdS and CdTe ► Formation of CdTe{sub 1−} {sub x}S{sub x} solid solution layer in the junction area.

  2. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  3. CdTe Photovoltaic Devices for Solar Cell Applications

    Science.gov (United States)

    2011-12-01

    July 28, 2011 14. ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film solar cells because of...mail.mil Phone: 301 394 0963 ABSTRACT Cadmium telluride ( CdTe ) has been recognized as a promising photovoltaic material for thin - film ...absorption coefficient allows films as thin as 2 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 17% have been

  4. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  5. Study of Back Contacts for CdTe Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    ZnTe/ZnTe∶Cu layer is used as a complex back contact. The parameters of CdTe solar cells with and without the complex back contacts are compared. The effects of un-doped layer thickness, doped concentration and post-deposition annealing temperature of the complex layer on solar cells performance are investigated.The results show that ZnTe/ZnTe∶Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells. Un-doped layer and post-deposition annealing of high temperature can increase open voltage. Using the complex back contact, a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained.

  6. Recent advances in thin film CdTe solar cells

    Science.gov (United States)

    Ferekides, Chris S.; Ceekala, Vijaya; Dugan, Kathleen; Killian, Lawrence; Oman, Daniel; Swaminathan, Rajesh; Morel, Don

    1996-01-01

    CdTe thin film solar cells have been fabricated on a variety of glass substrates (borosilicate and soda lime). The CdS films were deposited to a thickness of 500-2000 Å by the chemical bath deposition (CBD), rf sputtering, or close spaced sublimation (CSS) processes. The CdTe films were deposited by CSS in the temperature range of 450-625 °C. The main objective of this work is to fabricate high efficiency solar cells using processes that can meet low cost manufacturing requirements. In an attempt to enhance the blue response of the CdTe cells, ZnS films have also been prepared (CBD, rf sputtering, CSS) as an alternative window layer to CdS. Device behavior has been found to be consistent with a recombination model.

  7. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  8. High efficiency CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Marinskiy, D.; Viswanathan, V.; Tetali, B.; Palekis, V.; Selvaraj, P.; Morel, D.L. [University of South Florida, Tampa, FL (United States). Dept. of Electrical Engineering

    2000-02-21

    Cadmium telluride (CdTe) has long been recognized as a strong candidate for thin film solar cell applications. It has a bandgap of 1.45 eV, which is nearly ideal for photovoltaic energy conversion. Due to its high optical absorption coefficient essentially all incident radiation with energy above its band-gap is absorbed within 1-2 {mu}m from the surface. Thin film CdTe solar cells are typically heterojunctions, with cadmium sulfide (CdS) being the n-type junction partner. Small area efficiencies have reached the 16.0% level and considerable efforts are underway to commercialize this technology. This paper will present work carried out at the University South Florida sponsored by the National Renewable Energy Laboratory of the United States Department of Energy, on CdTe/CdS solar cells fabricated using the close spaced sublimation (CSS) process. The CSS technology has attractive features for large area applications such as high deposition rates and efficient material utilization. The structural and optical properties of CSS CdTe and CdS films and junctions will be presented and the influence of some important CSS process parameters will be discussed. (orig.)

  9. Manufacturing of CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bonnet, D. [ANTEC Solar GmbH, Rudisleben (Germany)

    2000-02-21

    Due to its basic physical and chemical properties CdTe has become a favoured base material for thin film solar cells, using robust, high-throughput manufacturing procedures. The technology shows significant potential for attaining cost levels of <0.5 Euro/W{sub p}. Close-spaced sublimation (CSS) is the fastest and simplest deposition process for both semiconductors used, CdTe and CdS, permitting in-line production at a high linear speed of about 1 m/min. The individual manufacturing steps for integrated modules are explained in view of their incorporation into the production line. ANTEC solar GmbH is engaged to enter the production of CdTe thin film modules on a scale of 10 MW{sub p} (100000 m{sup 2}) per annum, using CSS as the deposition procedure for the semiconductor films, and high-rate in-line sputtering for transparent and opaque contacts. Standard module size will be 60 x 120 cm{sup 2}. The production line is presently under construction. (orig.)

  10. Optical modeling of graphene contacted CdTe solar cells

    Science.gov (United States)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  11. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    OpenAIRE

    Aliyu, M. M.; Islam, M.A.; Hamzah, N. R.; Karim, M. R.; M.A. Matin; Sopian, K.; Amin, N

    2012-01-01

    This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears...

  12. Effects of Antimony Doping in Polycrystalline CdTe Thin-Film Solar Cells

    Science.gov (United States)

    Okamoto, Tamotsu; Ikeda, Shigeyuki; Nagatsuka, Satsuki; Hayashi, Ryoji; Yoshino, Kaoru; Kanda, Yohei; Noda, Akira; Hirano, Ryuichi

    2012-10-01

    The effects of antimony (Sb) doping of the CdTe layer in the CdTe solar cells were investigated using Sb-doped CdTe powders as source materials for CdTe deposition by the close-spaced sublimation (CSS) method. Conversion efficiency increased with increasing Sb concentration below 1×1018 cm-3, mainly owing to the improvement of the fill factor. Secondary ion microprobe mass spectrometry (SIMS) depth profile revealed that the Sb impurities at a concentration of approximately 1×1016 cm-3 were incorporated into the CdTe layer when using the Sb-doped CdTe source of 1×1018 cm-3. The observation of surface morphology showed that the grain sizes were improved by Sb addition. Therefore, the improved performance upon Sb addition to CdTe solar cells was probably due to the improvements in crystallinity, such as increased grain size.

  13. Emitter Choice for Epitaxial CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-11-21

    High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

  14. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    Science.gov (United States)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  15. Interface reactions in CdTe solar cell processing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; Dhere, R.; Swartzlander-Guest, A. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1998-12-31

    Currently, the best performing CdS/CdTe solar cells use a superstrate structure in which CdTe is deposited on a heated CdS/SnO{sub 2}/Glass substrate. In the close-spaced-sublimation (CSS) process, substrate temperatures in the range 550 C to 620 C are common. Understanding how these high processing temperatures impact reactions at the CdS/CdTe interface in addition to reactions between previously deposited layers is critical. At the SnO{sub 2}/CdS interface the authors have determined that SnO{sub 2} can be susceptible to reduction, particularly in H{sub 2} ambients. Room-temperature sputtered SnO{sub 2} shows the most susceptibility. In contrast, higher growth temperature chemical vapor deposited (CVD) SnO{sub 2} appears to be much more stable. Elimination of unstable SnO{sub 2} layers, and the substitution of thermal treatments for H{sub 2} anneals has produced total-area solar conversion efficiencies of 13.6% using non-optimized SnO{sub 2} substrates and chemical-bath deposited (CBD) CdS. Alloying and interdiffusion at the CdS/CdTe interface was studied using a new lift-off approach which allows enhanced compositional and structural analysis at the interface. Small-grained CdS, grown by a low-temperature CBD process, results in more CdTe{sub 1{minus}x}S{sub x} alloying (x = 12--13%) relative to larger-grained CdS grown by high-temperature CSS (x{approximately}2--3%). Interdiffusion of S and Te at the interface, measured with lift-off samples, appears to be inversely proportional to the amount of oxygen used during the CSS CdTe deposition. The highest efficiency to date using CSS-grown CdS is 10.7% and was accomplished by eliminating oxygen during the CdTe deposition.

  16. Cu{sub 2}S as ohmic back contact for CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Türck, Johannes; Siol, Sebastian; Mayer, Thomas; Klein, Andreas; Jaegermann, Wolfram, E-mail: jaegermann@surface.tu-darmstadt.de

    2015-05-01

    We prepared a back contact for CdTe solar cells with Cu{sub 2}S as primary contact. Cu{sub 2}S was evaporated on CdCl{sub 2} treated CdTe solar cells in superstrate configuration. The CdTe and CdS layers were deposited by Closed Space Sublimation. Direct interface studies with X-ray photoelectron spectroscopy have revealed a strongly reactive interface between CdTe and Cu{sub 2}S. A valence band offset of 0.4-0.6 eV has been determined. The performance of solar cells with Cu{sub 2}S back contacts was studied in comparison to cells with an Au contact that deposited onto a CdCl{sub 2}-treated CdTe surface that was chemically etched using a nitric-phosphoric etch. The solar cells were analyzed by current-voltage curves and external quantum efficiency measurements. After several post deposition annealing steps, 13% efficiency was reached with the Cu{sub 2}S back contact, which was significantly higher than the ones obtained for the NP-etched back contacts. - Highlights: • A new back contact for CdTe solar out of Cu{sub 2}S has been tested. • With a direct interface experiment the valence band offset was determined. • Post deposition heat treatment has been carried out for the solar cells. • 13% efficiency has been reached with the Cu{sub 2}S back contact.

  17. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao [Physics Department, Colorado State University, Fort Collins, Colorado 80523, USA; Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523, USA

    2016-06-17

    The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se2 (CIGS) cells. The basic principle is that positive ..delta..EC, often referred to as a 'spike', creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (..delta..EC >/= 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted

  18. Effects of high-temperature annealing on ultra-thin CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xia Wei; Lin Hao; Wu, Hsiang N.; Tang, Ching W., E-mail: chtang@che.rochester.edu

    2011-10-31

    High-temperature annealing (HTA), a process step prior to vapor cadmium chloride (VCC) treatment, has been found to be useful for improving the crystallinity of CdTe films and the efficiency of ultra-thin CdTe solar cells. Scanning electron microscopy, optical absorption, photoluminescence measurements and analyses on photoluminescence results using spectral deconvolution reveal that the additional HTA step produces substantial grain growth and reduces grain boundary defects. It also reduces excessive sulfur diffusion across the junction that can occur during the VCC treatment. The HTA step helps to produce pinhole-free CdTe films and reduce electrical shorts in ultra-thin CdTe solar cells. An efficiency of about 11.6% has been demonstrated for ultra-thin CdS/CdTe solar cells processed with HTA step.

  19. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    Directory of Open Access Journals (Sweden)

    Hao Xue

    2016-07-01

    Full Text Available Solution-processed CdTe nanocrystals (NCs photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values comparable to those of commercial thin film CdTe/CdS solar cells fabricated by the close-space sublimation (CSS method. Here we review the progress and prospects in this field, focusing on new insights into CdTe NCs synthesized, device fabrication, NC solar cell operation, and how these findings give guidance on optimizing solar cell performance.

  20. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  1. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    Energy Technology Data Exchange (ETDEWEB)

    Siepchen, B., E-mail: bastian.siepchen@ctf-solar.com [CTF Solar GmbH, Industriestraße 2, 65779 Kelkheim (Germany); Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M. [CTF Solar GmbH, Industriestraße 2, 65779 Kelkheim (Germany); Bossert, S.; Grimm, M. [Roth and Rau AG, An der Baumschule 6-8, 09337 Hohenstein-Ernstthal (Germany); Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H. [Fraunhofer Institute for Electron Beam and Plasma Technology FEP, Winterbergstrasse 28, 01277 Dresden (Germany)

    2013-05-01

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb{sub 2}Te{sub 3} based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb{sub 2}Te{sub 3} back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section.

  2. Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

    OpenAIRE

    Es'haghi Gorji, Nima

    2014-01-01

    CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized wat...

  3. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    OpenAIRE

    Hao Xue; Rongfang Wu; Ya Xie; Qiongxuan Tan; Donghuan Qin; Hongbin Wu; Wenbo Huang

    2016-01-01

    Solution-processed CdTe nanocrystals (NCs) photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values compar...

  4. An optimized multilayer structure of CdS layer for CdTe solar cells application

    Energy Technology Data Exchange (ETDEWEB)

    Han Junfeng, E-mail: pkuhjf@gmail.com [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao Cheng, E-mail: Cliao@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Jiang Tao [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Zhao Kui [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Road Yiheyuan 5, Beijing 100871 (China); Klein, A.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany)

    2011-04-28

    Research highlights: > Two different methods to prepare CdS films for CdTe solar cells. > A new multilayer structure of window layer for the CdTe solar cell. > Thinner CdS window layer for the solar cell than the standard CdS layer. > Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer ({approx}80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  5. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  6. Effects of CdTe growth conditions and techniques on the efficiency limiting defects and mechanisms in CdTe solar cells

    Science.gov (United States)

    Rohatgi, A.; Chou, H. C.; Jokerst, N. M.; Thomas, E. W.; Ferekides, C.; Kamra, S.; Feng, Z. C.; Dugan, K. M.

    1996-01-01

    CdTe solar cells were fabricated by depositing CdTe films on CdS/SnO2/glass substrates using close-spaced sublimation (CSS) and metalorganic chemical vapor deposition (MOCVD). Te/Cd mole ratio was varied in the range of 0.02 to 6 in the MOCVD growth ambient in an attempt to vary the native defect concentration. Polycrystalline CdTe layers grown by MOCVD and CSS both showed average grain size of about 2 μm. However, the CdTe films grown by CSS were found to be less faceted and more dense compared to the CdTe grown by MOCVD. CdTe growth techniques and conditions had a significant impact on the electrical characteristics of the cells. The CdTe solar cells grown by MOCVD in the Te-rich growth condition and by the CSS technique gave high cell efficiencies of 11.5% and 12.4%, respectively, compared to 6.6% efficient MOCVD cells grown in Cd-rich conditions. This large difference in efficiency is explained on the basis of (a) XRD measurements which showed a higher degree of atomic interdiffusion at the CdS/CdTe interface in high performance devices, (b) Raman measurements which endorsed more uniform and preferred grain orientation by revealing a sharp CdTe TO mode in the high efficiency cells, and (c) carrier transport mechanism which switched from tunneling/interface recombination to depletion region recombination in the high efficiency cells. In this study, Cu/Au layers were evaporated on CdTe for the back contact. Lower efficiency of the Te-rich MOCVD cells, compared to the CSS cells, was attributed to contact related additional loss mechanisms, such as Cd pile-up near Cu/CdTe interface which can give rise to Cd-vacancy defects in the bulk, and higher Cu concentration in the CdTe layer which can cause shunts in the device. Finally, SIMS measurements on the CdTe films of different crystallinity and grain size confirmed that grain boundaries are the main conduits for Cu migration into the CdTe film. Thus larger CdTe grain size or lower grain boundary area per unit volume

  7. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  8. Effects of processing temperature on the thickness of CdS and the performance of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Tetali, B.; Marinskiy, D.; Marinskaya, S.; Morel, D. [Department of Electrical Engineering, Center for Clean Energy and Vehicles, University of South Florida, Tampa, Florida 33620 (United States)

    1997-02-01

    CdTe cells have been fabricated on soda lime glass substrates. The effect of the CdS thickness and CdTe deposition temperature on the spectral response (SR) and solar cell parameters has been studied. The CdTe deposition temperature has been found to be a key processing parameter in determining the extent of interdiffusion at the CdTe and CdS interface. When the deposition of CdTe is carried out at high temperatures a significant portion of the CdS films is {open_quotes}lost{close_quotes} due to interdiffusion which leads to enhancement of the blue response of the solar cells. Devices with identical blue response (400{endash}500 nm) have been fabricated even though the starting CdS thicknesses were different; the cells for which the starting CdS thickness was greater exhibited higher open-circuit voltages and fill factors. {copyright} {ital 1997 American Institute of Physics.}

  9. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

    Science.gov (United States)

    Okamoto, Tamotsu; Kitamoto, Shinji; Yamada, Akira; Konagai, Makoto

    2001-05-01

    The control of native defects in the CdTe thin film solar cells was investigated using a novel source for close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and the Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2% because of the extremely low shunt resistance. On the other hand, a conversion efficiency above 15% was obtained by using the Cd-rich source. Capacitance-voltage (C-V) characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed using the Cd-rich source.

  10. Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale

    Science.gov (United States)

    Bai, Zhizhong; Yang, Jun; Wang, Deliang

    2011-10-01

    CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9% was obtained for a 1-μm-thick CdTe solar cell. An increased intensity of deep recombination states in the band gap, which was responsible for the reduced open-circuit voltage and fill factor for ultra-thin solar cells, was induced due to the not-well-developed polycrystalline CdTe microstructure and the CdS/CdTe heterojunction and the presence of Cu in the back contact. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency.

  11. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  12. In-depth analysis of chloride treatments for thin-film CdTe solar cells

    OpenAIRE

    Major, J.D.; Al Turkestani, M.; Bowen, L; Brossard, M.; Li, C; Lagoudakis, P.; S. J. Pennycook; Phillips, L. J.; Treharne, R. E.; Durose, K.

    2016-01-01

    CdTe thin-film solar cells are now the main industrially established alternative to silicon-based photovoltaics. These cells remain reliant on the so-called chloride activation step in order to achieve high conversion efficiencies. Here, by comparison of effective and ineffective chloride treatments, we show the main role of the chloride process to be the modification of grain boundaries through chlorine accumulation, which leads an increase in the carrier lifetime. It is also demonstrated th...

  13. Application of Lithium Chloride Dopant in Fabrication of CdTe Solar Cells

    Science.gov (United States)

    Xu, Hang; Zeng, Guanggen; Feng, Lianghuan; Wu, Lili; Liu, Cai; Ren, Shengqiang; Li, Kang; Li, Bing; Li, Wei; Wang, Wenwu; Zhang, Jingquan

    2017-02-01

    We report use of lithium chloride (LiCl) as a non-Cd dopant to deal with the environmental issues associated with use of traditional CdCl2 dopant in CdTe solar cells. It has been found that, after LiCl treatment, device performance parameters including external quantum efficiency and conversion efficiency were improved considerably, being comparable to those of a counterpart treated with CdCl2. The optimal efficiency of 9.58% was obtained at 405°C, and V oc as high as ˜737.3 mV was obtained at 385°C. Thorough study of the properties of the CdTe film treated by LiCl by x-ray diffraction analysis, scanning electron microscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectroscopy further verified the feasibility of posttreatment with nontoxic LiCl for fabrication of CdTe photovoltaic devices. The doping level of p-type CdTe thin film was improved by lithium. This represents a nontoxic approach for fabrication of commercial CdS/CdTe thin-film solar cells with better performance.

  14. Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Salavei, A.; Rimmaudo, I. [Laboratory for Applied Physics, Department of Computer Science, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, F. [Laboratorio di Chimica dello Stato Solido, DB, Univ. Verona, and INSTM, UdR Verona, Strada Le Grazie 15, 37134 Verona (Italy); Romeo, A., E-mail: alessandro.romeo@univr.it [Laboratory for Applied Physics, Department of Computer Science, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy)

    2013-05-01

    Due to its high scalability and low production cost, CdTe solar cells have shown a very strong potential for large scale energy production. Although the number of modules produced could be limited by tellurium scarcity, it has been reported that reducing CdTe thickness down to 1.5 μm would solve this issue. There are, however, issues to be considered when reducing thickness, such as formation of pinholes, lower crystallization, and different possible effects on material diffusion within the interfaces. In this work, we present the study of CdTe solar cells fabricated by vacuum evaporation with different CdTe thicknesses. Several cells with a CdTe thickness ranging from 0.7 to 6 μm have been fabricated. The deposition process has been optimized accordingly and their physical and electrical properties have been studied. Thin cells show a different electrical behavior in terms of open circuit voltage and fill factor. Efficiencies range from 7% for thin CdTe cells to 13.5% for the standard thickness. - Highlights: ► Ultra thin CdTe absorbers have been prepared and studied. ► Grain size is depending on the CdTe thickness but spread in the grains increases. ► Lattice parameter is reduced only for ultra thin CdTe. ► The band gap reveals an intermixed CdTe absorber. ► The reason for lower efficiency of ultra thin CdTe is explained.

  15. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    OpenAIRE

    A. Teyou Ngoupo; S. Ouédraogo; Zougmoré, F.; Ndjaka, J. M. B.

    2015-01-01

    Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O l...

  16. Improvement to thin film CdTe solar cells with controlled back surface oxidation

    OpenAIRE

    Rugen-Hankey, S.L.; Clayton, Andrew J; Barrioz, Vincent; Kartopu, Giray; Irvine, Stuart J; McGettrick, J.D.; Hammond, D.

    2015-01-01

    Thin film CdTe solar cells were produced by MOCVD, at atmospheric pressure, under a hydrogen atmosphere (i.e. oxygen-free). Window layer alloying with zinc (forming Cd1−xZnxS) and extrinsic p-type doping with arsenic (giving CdTe:As) have been used to improve photovoltaic solar cell performances, but as-grown MOCVD-CdTe PV cells are still typically characterised by low Voc (~620–690 mV). Post-deposition annealing in air for 30 min at low temperature (170 °C) prior to evaporation of the back c...

  17. Luminescent borate glass for efficiency enhancement of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steudel, Franziska, E-mail: franziska.steudel@iwmh.fraunhofer.de [Fraunhofer Application Center for Inorganic Phosphors, Branch Lab of Fraunhofer Institute for Mechanics of Materials IWM, Lübecker Ring 2, 59494 Soest (Germany); Loos, Sebastian [Department of Electrical Engineering, South Westphalia University of Applied Sciences, Lübecker Ring 2, 59494 Soest (Germany); Ahrens, Bernd; Schweizer, Stefan [Fraunhofer Application Center for Inorganic Phosphors, Branch Lab of Fraunhofer Institute for Mechanics of Materials IWM, Lübecker Ring 2, 59494 Soest (Germany); Department of Electrical Engineering, South Westphalia University of Applied Sciences, Lübecker Ring 2, 59494 Soest (Germany)

    2015-08-15

    Rare-earth (RE) doped borate glasses are investigated for their potential as photon down-shifting cover glass for CdTe solar cells. The barium borate base glass is doped with trivalent rare-earth ions such as Sm{sup 3+}, Eu{sup 3+}, and Tb{sup 3+} showing an intense luminescence in the red (Sm{sup 3+}, Eu{sup 3+}) and green (Tb{sup 3+}) spectral range upon excitation in the ultraviolet and blue. Additionally, the glasses are double-doped with two RE ions for a broad-band absorption. The gain in short-circuit current density of CdTe solar cells with different thicknesses of the CdS buffer layer is calculated. Though the single-doped glasses already reveal a slight increase in short-circuit current density, the double-doped glasses allow for higher efficiency gains since a significant broader spectral range is covered for absorption. For a Tb{sup 3+}/Eu{sup 3+} double-doped glass with a RE doping level of 1 at% each, an efficiency increase of 1.32% can be achieved. - Highlights: • Rare-earth doped front glass for high efficiency CdTe solar cells were prepared. • Double-doping allows for higher efficiency gains than single-doping. • Efficiency enhancement of 1.32% can be achieved with Tb{sup 3+}/Eu{sup 3+} doped front glass.

  18. Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2007-04-01

    The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

  19. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    Science.gov (United States)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  20. Transparent Ohmic Contacts for Solution-Processed, Ultrathin CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kurley, J. Matthew; Panthani, Matthew G.; Crisp, Ryan W.; Nanayakkara, Sanjini U.; Pach, Gregory F.; Reese, Matthew O.; Hudson, Margaret H.; Dolzhnikov, Dmitriy S.; Tanygin, Vadim; Luther, Joseph M.; Talapin, Dmitri V.

    2017-01-13

    Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (~500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. We used scanning Kelvin probe microscopy to further show how the above approaches improved carrier collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A2CdTe2 (A = Na, K, Cs, N2H5), can be used in conjunction with current/light soaking to improve PCE further.

  1. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  2. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    A. Teyou Ngoupo

    2015-01-01

    Full Text Available Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdTe1-xSx (x=0.12 and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm of CdTe1-xSx layer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.

  3. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    Science.gov (United States)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  4. Identification of critical stacking faults in thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  5. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    Directory of Open Access Journals (Sweden)

    Songbai Hu

    2011-12-01

    Full Text Available Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries diffuse deeply in the CdTe layer, and more photogenerated electrons and holes are separated by the segregated SbCd+ donors into the GBs. What is more, the doping concentration in the vicinity of the CdTe/CdS heterojunction increases for the formation of substitutional SbTe- acceptors under the Cd-rich conditions. For the introduction of the p-type Sb2Te3 layers as the back contact to the CdTe thin film solar cells, the performance of CdTe thin film solar cells has been greatly improved and an efficiency of 13.1% (FF=62.3%, Jsc=25.8 mA/cm2, Voc= 815.8 mV obtained.

  6. 3D Lifetime Tomography Reveals How CdCl 2 Improves Recombination Throughout CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, Edward S. [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA; PLANT PV, Inc, Alameda CA 94501 USA; Ursprung, Benedikt [PLANT PV, Inc, Alameda CA 94501 USA; Colegrove, Eric [National Renewable Energy Laboratory, Golden CO 80401 USA; Moutinho, Helio R. [National Renewable Energy Laboratory, Golden CO 80401 USA; Borys, Nicholas J. [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA; Hardin, Brian E. [PLANT PV, Inc, Alameda CA 94501 USA; Peters, Craig H. [PLANT PV, Inc, Alameda CA 94501 USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, Golden CO 80401 USA; Schuck, P. James [Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley CA 94720 USA

    2016-11-15

    Using two-photon tomography, carrier lifetimes are mapped in polycrystalline CdTe photovoltaic devices. These 3D maps probe subsurface carrier dynamics that are inaccessible with traditional optical techniques. They reveal that CdCl2 treatment of CdTe solar cells suppresses nonradiative recombination and enhances carrier lifetimes throughout the film with substantial improvements particularly near subsurface grain boundaries and the critical buried p-n junction.

  7. Interface Characterization of Single-Crystal CdTe Solar Cells With VOC > 950 mV

    Energy Technology Data Exchange (ETDEWEB)

    Burst, James M.; Duenow, Joel N.; Kanevce, Ana; Moutinho, Helio R.; Jiang, Chun Sheng; Al-Jassim, Mowafak M.; Reese, Matthew Owen; Albin, David S.; Aguiar, Jeffrey A.; Colegrove, Eric; Ablekim, Tursun; Swain, Santosh K.; Lynn, Kelvin G.; Kuciauskas, Darius; Barnes, Teresa M.; Metzger, Wyatt K.

    2016-11-01

    Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

  8. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    Energy Technology Data Exchange (ETDEWEB)

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  9. Electron and hole drift mobility measurements on thin film CdTe solar cells

    Science.gov (United States)

    Long, Qi; Dinca, Steluta A.; Schiff, E. A.; Yu, Ming; Theil, Jeremy

    2014-07-01

    We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10-1-100 cm2/V s, and holes are in the range of 100-101 cm2/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl2; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.

  10. Grain boundaries in CdTe thin film solar cells: a review

    Science.gov (United States)

    Major, Jonathan D.

    2016-09-01

    The current state of knowledge on the impact of grain boundaries in CdTe solar cells is reviewed with emphasis being placed on working cell structures. The role of the chemical composition of grain boundaries as well as growth processes are discussed, along with characterisation techniques such as electron beam induced current and cathodoluminescence, which are capable of extracting information on a level of resolution comparable to the size of the grain boundaries. Work which attempts to relate grain boundaries to device efficiency is also assessed and gaps in the current knowledge are highlighted.

  11. Influence of CuxS back contact on CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Zhi; Feng Lianghuan; Zeng Guanggen; Li Wei; Zhang Jingquan; Wu Lili; Wang Wenwu

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells.The characteristics of the films deposited on Si-substrate are studied by XRD.The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing,samples are in polycrystalline phases with increasing temperature.The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells.When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best.The energy conversion efficiency can be higher than 12.19%,the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  12. Influence of CuxS back contact on CdTe thin film solar cells

    Science.gov (United States)

    Zhi, Lei; Lianghuan, Feng; Guanggen, Zeng; Wei, Li; Jingquan, Zhang; Lili, Wu; Wenwu, Wang

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells. The characteristics of the films deposited on Si-substrate are studied by XRD. The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing, samples are in polycrystalline phases with increasing temperature. The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells. When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best. The energy conversion efficiency can be higher than 12.19%, the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  13. CdS: Characterization and recent advances in CdTe solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.; Marinskiy, D.; Morel, D.L. [Univ. of South Florida, FL (United States)

    1997-12-31

    Cadmium sulfide (CdS) films deposited by chemical bath deposition (CBD) have been used for the fabrication of high efficiency CdTe and CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin film solar cells. An attractive alternative deposition technology with manufacturing advantages over the CBD is the close spaced sublimation (CSS). In this work CdTe/CdS solar cells prepared entirely by the CSS process exhibited 15.0% efficiencies under global AM1.5 conditions as verified at the National Renewable Energy Laboratory. This paper reports on studies carried out on as deposited and heat treated CSS CdS films and all CSS CdTe/CdS solar cells using photoluminescence, x-ray diffraction, and I-V-T measurements.

  14. K-edge EXAFS and XANES studies of Cu in CdTe thin-film solar cells

    Science.gov (United States)

    Liu, Xiangxin; Gupta, Akhlesh; Compaan, Alvin D.; Leyarovska, Nadia; Terry, Jeff

    2002-03-01

    Copper has been identified as a very important dopant element in CdTe thin-film solar cells. Cu is a deep acceptor in CdTe and is commonly used to obtain a heavily doped, low resistance back contact to polycrystalline CdTe. Cu also helps to increase the open circuit voltage of the cell. However, Cu is also a fast diffuser in CdTe, especially along grain boundaries, and can accumulate at the CdS/CdTe junction. It is suspected of leading to cell performance degradation in some cases. The present study is designed to help identify the lattice location of the Cu in CdTe. Cu K-edge, x-ray absorption (XAS) measurements were conducted on Cu in thin films of CdTe. Experiments were performed at the MR-CAT beamline at the Advanced Photon Source. The 3 mm CdTe layers were magnetron sputtered onto fused silica substrates. Some films were diffused with Cu from a 200 Å layer of evaporated Cu. XAS spectra were collected in fluorescence geometry with a 13 elements Ge detector. Quantitative fluorescence spectroscopy measurements were also performed. Details of the Cu environment and possible changes with time will be reported.

  15. 14% sputtered thin-film solar cells based on CdTe

    Science.gov (United States)

    Compaan, A. D.; Gupta, A.; Drayton, J.; Lee, S.-H.; Wang, S.

    2004-02-01

    Polycrystalline II-VI semiconductor materials show great promise for thin-film photovoltaic cells and modules. Large-area deposition of these II-VI semiconductors such as CdTe is possible by a variety of methods but the use of a plasma-based method such as magnetron sputtering can have significant advantages. Here we present recent results in the fabrication of CdS/CdTe cells using rf magnetron sputtering and discuss some of the advantages that appear possible from the use of sputtering methods in this class of materials. Some of these advantages are particularly relevant as the polycrystalline thin-film PV community addresses issues related to the challenges of fabricating high efficiency tandem cells with efficiencies over 25%. Our best results have been obtained with sputtered ZnO:Al to achieve a CdTe solar cell with 14.0% efficiency at one sun for an air-mass-1.5 global spectrum. In addition, we have studied reactive sputtering of ZnTe:N which shows promise for use as a transparent back contact or recombination junction for alloyed II-VI-based top cells in a tandem solar-cell configuration.

  16. Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Kroposki, B.; Strand, T.; Hansen, R. [National Renewable Energy Lab., Golden, CO (United States); Powell, R.; Sasala, R. [Solar Cells, Inc., Toledo, OH (United States)

    1996-05-01

    The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

  17. Large area thin film CdTe and Zn(x)Cd(1-x)Te heterojunction solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Firszt, F.; Naseem, H. A.; Stawski, R.

    Thin film CdTe heterojunction solar cells have been prepared by the deposition of p-type CdTe films on CdS/SnO2:F/glass substrates using chemical vapor deposition (CVD) and close-spaced sublimation (CSS) techniques. The relative merits of the two techniques are discussed, and the characteristics of solar cells prepared by CVD and CSS techniques are compared. In addition, the properties of Zn(x)Cd(1-x)Te have been investigated.

  18. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    Science.gov (United States)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  19. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  20. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  1. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  2. Alternative procedure for the fabrication of close-spaced sublimated CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Dhere, R. G. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Ballif, C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Al-Jassim, M. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kazmerski, L. L. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2000-07-01

    We deposited CdTe thin films by close-spaced sublimtation using an alternative procedure, with temperatures about 170 degree sign C lower than the ones used in the standard procedure. These films were used in the fabrication of all thin-film CdTe/CdS solar cells. We treated the cells using the well-established CdCl{sub 2} dipping process as well as a new vapor treatment. The vapor process was more reproducible and easier to control, and it produced the best devices. This process was also much more effective in the recrystallization of the CdTe films. The best device that we produced had an efficiently of 11.6%, close to the 12.3% efficiency of the best device fabricated using the standard process. These results show that the new process has good potential, and besides being an alternative for lower-cost solar cell production, it can also produce high-efficiency devices. (c) 2000 American Vacuum Society.

  3. Detection of electron emission as DLTS signal in CdTe solar cells

    Science.gov (United States)

    Ding, Y. M.; Cheng, Z.; Tan, X.; Misra, D.; Delahoy, A. E.; Chin, K. K.

    2016-10-01

    This work identifies an incongruity in the detection of the minority carrier signal in CdTe solar cells during the deep level transient spectroscopy (DLTS) measurement. Use of quasi-Fermi level instead of Fermi level of majority carriers to estimate the probability of emitting carriers seems to correct the ambiguity. During the experiment, signals from minority carrier traps (electron traps) were detected by using a long filling pulse time instead of an electron injection pulse. The DLTS measurements of CdTe solar cells observed a single electron trap with energy level EE1 = 0.47 eV, and two hole traps with energy levels, EH1 = 0.17 eV and EH2 = 0.27 eV. The possibility of any impact from the back contact was excluded, and the phenomenon was clarified by the simulation. It was further observed that when the condition of quasi-Fermi level is considered, the results of calculated probability were significantly different from that of the results that used only Fermi level of majority carriers. The simulations further aided the explanation of the defect behavior in DLTS measurements and the overlapping phenomenon of the capacitance spectrum of hole and electron traps.

  4. Superior stability of ultra thin CdTe solar cells with simple Cu/Au back contact

    Energy Technology Data Exchange (ETDEWEB)

    Rimmaudo, Ivan; Salavei, Andrei; Xu, Bing Lei; Di Mare, Simone; Romeo, Alessandro, E-mail: alessandro.romeo@univr.it

    2015-05-01

    Due to its high scalability and low production cost, CdTe has shown a significant potential for high mass production, resulting to be one of the cheapest photovoltaic technologies available. Efficiencies exceeding 20% have been obtained by the application of high temperature CdTe deposition. However tellurium scarcity is a limitation for mass production and one of the possibilities to overcome this is the reduction of absorber thickness. We have already demonstrated efficiencies above 11% for devices with 1.5 μm thick CdTe. Nowadays we have fabricated ultra-thin absorber devices performing more than 13% efficiencies. But what is most interesting is that we have observed a different electrical operation and stability, connected to the fact that the depletion region takes a very large part of the device. In this work many CdTe solar cells with a standard Cu/Au back contact, made with different absorber thicknesses, were prepared, stored in dark and tested at different aging times, showing different reactions to the aging and in particular a remarkable stability as CdTe thickness reduces. - Highlights: • CdTe/CdS devices with 0.7, 1 and 1.8 μm thick absorbers have been prepared. • Superior stability in dark aging of ultra thin CdTe devices has been registered. • Electrical analysis shows different behaviors and nature of defects for thin CdTe samples. • For 6 μm CdTe samples degradation is driven mainly by defect compensation. • For ultra thin CdTe samples, degradation is dominated by impurities from the front contact.

  5. Overcoming degradation mechanisms in CdTe solar cells: First annual report, August 1998--August 1999

    Energy Technology Data Exchange (ETDEWEB)

    Cahen, D.; Gartsman, K.; Hodes, G.; Rotlevy, O.; Visoly-Fisher, I,; Dobson, K.

    2000-02-28

    The authors have studied the importance of chemical processes for the stability of CdTe solar cells, in particular, diffusion in the ohmic contact/absorber junction regions. Both whole cells and test systems containing only the ohmic contact and the absorber are used. They found several experimental methods to be useable tools to follow the effects of impurity diffusion on the CdTe grain boundaries, grain bulk, and surface. In addition, they have explored alternative contacting schemes. The first year of activities led to the following tentative conclusions: Grain boundaries in CdTe/CdS cells are NOT fully passivated and are expected to be electrically active; There appears to be fast ionic diffusion in the vicinity of the Cu/HgTe/graphite back-contact, possibly enhanced by grain boundary diffusion; The macroscopic response to stress is different for cells with identical back-contact, but from different manufacturers. Different factors and/or different reactions to identical factors are possibly at work here; and Ni-P appears to be a promising back-contact material.

  6. Solution-Processed, Ultrathin Solar Cells from CdCl3(-)-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3(-) Ligands.

    Science.gov (United States)

    Zhang, Hao; Kurley, J Matthew; Russell, Jake C; Jang, Jaeyoung; Talapin, Dmitri V

    2016-06-22

    Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer.

  7. Advances in all-sputtered CdTe solar cells on flexible substrates

    Science.gov (United States)

    Wieland, Kristopher; Mahabaduge, Hasitha; Vasko, Anthony; Compaan, Alvin

    2010-03-01

    The University of Toledo II-VI semiconductor group has developed magnetron sputtering (MS) for the deposition of thin films of CdS, CdTe, and related materials for photovoltaic applications. On glass superstrates, we have reached air mass 1.5 efficiencies of 14%.[1] Recently we have studied the use of MS for the fabrication of thin-film CdS/CdTe cells on flexible polyimide superstrates. This takes advantage of the high film quality that can be achieved at substrate temperatures below 300 C when RF MS is used. Our recent CdS/CdTe solar cells have reached 10.5% on flexible polyimide substrates. [2] This all-sputtered cell (except for back contact) has a structure of polyimide/ZnO:Al/ZnO/CdS/CdTe/Cu/Au. The physics of this device will be discussed through the use of spectral quantum efficiency and current-voltage measurements as a function of CdTe layer thickness. Pathways toward further increases in device efficiencies will also be discussed. [1] Appl. Phys. Lett. 85, 684 (2004) [2] Phys. Stat. Sol. (B) 241, No. 3, 779--782 (2004)

  8. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  9. In-depth analysis of chloride treatments for thin-film CdTe solar cells

    Science.gov (United States)

    Major, J. D.; Al Turkestani, M.; Bowen, L.; Brossard, M.; Li, C.; Lagoudakis, P.; Pennycook, S. J.; Phillips, L. J.; Treharne, R. E.; Durose, K.

    2016-10-01

    CdTe thin-film solar cells are now the main industrially established alternative to silicon-based photovoltaics. These cells remain reliant on the so-called chloride activation step in order to achieve high conversion efficiencies. Here, by comparison of effective and ineffective chloride treatments, we show the main role of the chloride process to be the modification of grain boundaries through chlorine accumulation, which leads an increase in the carrier lifetime. It is also demonstrated that while improvements in fill factor and short circuit current may be achieved through use of the ineffective chlorides, or indeed simple air annealing, voltage improvement is linked directly to chlorine incorporation at the grain boundaries. This suggests that focus on improved or more controlled grain boundary treatments may provide a route to achieving higher cell voltages and thus efficiencies.

  10. Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

    1994-09-01

    Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

  11. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  12. Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 µm

    Science.gov (United States)

    Amin, Nowshad; Isaka, Takayuki; Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    1999-08-01

    This study focuses on the technique for the stable growth of CdTe (1.44 eV) with thickness near its absorption length, 1 µm, by close spaced sublimation (hereafter CSS) process, in order to achieve high conversion efficiency. X-ray diffraction (XRD) spectroscopy was carried out to examine the microstructure of the films. Current-voltage (I V) characteristics, spectral response and other features of the solar cells using these CdTe films were investigated to elucidate the optimum conditions for achieving the best performance in such thin (1 µm) CdTe solar cells. Thickness was found to be reduced by controlling the temperature profile used during CSS growth. The temperature profile was found to be an important factor in growing high-quality thin films. By controlling the growth parameters and optimizing the annealing temperature at different fabrication steps, we have succeeded, to date, in achieving cell efficiencies of 14.3% (open-circuit voltage (Voc): 0.82 V, short-circuit current (Jsc): 25.2 mA/cm2, fill factor (F.F.): 0.695, area: 1 cm2) with 5 µm, 11.4% (Voc: 0.77 V, Jsc: 23.7 mA/cm2, F.F.: 0.63, area: 1 cm2) with 1.5 µm and 11.2% (Voc: 0.77 V, Jsc: 23.1 mA/cm2, F.F.: 0.63, area: 1 cm2) with only 1 µm of CdTe layer thickness at an air mass of 1.5 without antireflection coatings. This is important for establishing a strong foundation before developing a new structure (e.g., glass/ITO/CdS/CdTe/ZnTe/Ag configuration) with a back surface field of wide-bandgap material (e.g., ZnTe).

  13. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  14. Cu-doped CdS and its application in CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Yi [School of Automation, Wuhan University of Technology, Wuhan, Hubei 430070 (China); College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212 (China); Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Deliang, E-mail: eedewang@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  15. Cu-doped CdS and its application in CdTe thin film solar cell

    Science.gov (United States)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  16. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  17. Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ari, Ozan; Polat, Mustafa; Selamet, Yusuf [Department of Physics, Izmir Institute of Technology, Izmir 35430 (Turkey); Karakaya, Merve [Department of Material Science and Engineering, Izmir Institute of Technology, Izmir 35430 (Turkey)

    2015-11-15

    CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∝5 x 10{sup 5}cm{sup -1} in solar radiation spectrum. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Charge transport in CdTe solar cells revealed by conductive tomographic atomic force microscopy

    Science.gov (United States)

    Luria, Justin; Kutes, Yasemin; Moore, Andrew; Zhang, Lihua; Stach, Eric A.; Huey, Bryan D.

    2016-11-01

    The influence of microstructural defects on the device properties in CdTe remains largely unknown. This is partly because characterization techniques have been unable to image electrical pathways throughout three-dimensional grains and grain boundaries with nanoscale resolution. Here, we employ a conductive and tomographic variation of atomic force microscopy to study charge transport at the nanoscale in a functioning thin-film solar cell with 12.3% efficiency. Images of electric current collected through the device thickness reveal spatially dependent short-circuit and open-circuit performance, and confirm that grain boundaries are preferential pathways for electron transport. Results on samples with and without cadmium chloride treatment reveal little difference in grain structure at the microscale, with samples without treatment showing almost no photocurrent either at planar defects or at grain boundaries. Our results supports an energetically orthogonal transport system of grain boundaries and interconnected planar defects as contributing to optimal solar cell performance, contrary to the conventional wisdom of the deleterious role of planar defects on polycrystalline thin-film solar cells.

  19. Flexible CdTe Solar Cells and Modules: Cooperative Research and Development Final Report, CRADA Number CRD-14-548

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, Teresa [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-05-01

    Lucintech and NREL will collaborate to develop flexible CdTe solar cells on flexible glass using sputtering and other deposition technologies. This initial work will be conducted under the DOE funded Foundational Program to Advance Cell Efficiency (FPACE) 1 project, and the interaction with Lucintech will focus on scaling up and transferring the high efficiency cell processes to module production on a pilot line.

  20. Fabrication of solar cells based on polycrystalline CdTe thin films using an economical production. Energie

    Energy Technology Data Exchange (ETDEWEB)

    Tranchart, J.C.; Boucherez, P.

    1983-01-01

    Polycrystalline CdS and CdTe films were produced by serigraphy. High-quality CdS films were obtained, especially with CdCl as melting phase. In the field of CdTe films, further studies are required in order to improve the sintering process, the film porosity characteristics, and the electric resistivity which decides the serial conductivity of the n-CdS/p-CdTe structures. In the field of solar cells, quartz +In/sub 2/O/sub 3/+CdS+CdTe heterostructures with a photoelectric efficiency of 2.5% were obtained. This value is too low, even if the economic advantages of serigraphy are taken into account. Further studies should center on the sintering process for CdTe films.

  1. Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Grecu, D. [University of Toledo, Toledo, Ohio 43606-3390 (United States); Compaan, A. D. [University of Toledo, Toledo, Ohio 43606-3390 (United States); Young, D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Jayamaha, U. [First Solar LLC., Perrysburg, Ohio 43551 (United States); Rose, D. H. [First Solar LLC., Perrysburg, Ohio 43551 (United States)

    2000-09-01

    We explore Cu electronic states in CdTe using photoluminescence as the main investigative method. Our results are consistent with some Cu atoms occupying substitutional positions on the Cd sublattice and with others forming Frenkel pairs of the type Cu{sub i}{sup +}-V{sub Cd}{sup -} involving an interstitial Cu and a Cd vacancy. In addition, we find that Cu-doped CdTe samples exhibit a significant ''aging'' behavior, attributable to the instability of Cu acceptor states as verified by our Hall measurements. The aging appears to be reversible by a 150-200 degree sign C anneal. Our results are used to explain efficiency degradation of some CdTe solar-cell devices which use Cu for the formation of a backcontact. (c) 2000 American Institute of Physics.

  2. The properties of CdTe solar cells with ZnTe/ZnTe: Cu buffer layers

    Institute of Scientific and Technical Information of China (English)

    Song Huijin; Zheng Jiagui; Feng Lianghuan; Yan Qiang; Lei Zhi; Wu Lili; Zhang Jingquan; Li Wei; Li Bing

    2008-01-01

    CdS/CdTe solar cells with ZnTe/ZnTe:Cu buffer layers were fabricated and studied. The energy band structure of it was analyzed. The C-V, I-V characteristics and the spectral response show that the ZnTe/ZnTe:Cu buffer layers improve the back contact characteristic properties, the diode characteristics of the forward junction and the short-wave spectral response of the CdTe solar cells. The ZnTe/ZnTe:Cu buffer layers affect the solar cell conversion efficiency and its fill factor.

  3. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    Science.gov (United States)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  4. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-07-15

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is Te-2+/Cd, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve 10^17 cm-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of 10^17 cm-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te-Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  5. [The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

    Science.gov (United States)

    Zhang, Li-xiang; Feng, Liang-huan; Wang, Wen-wu; Xu, Hang; Wu, Li-li; Zhang, Jing-quan; Li, Wei; Zeng, Guang-gen

    2015-02-01

    ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured. The effect of ZnS films prepared in different conditions on the performance of CdTe solar cells was researched. The effects of both CdS thickness and ZnS/CdS composite layer on the transmission in short wavelength were studied. Particularly, the quantum efficiency of CdTe solar cells with ZnS/CdS window layer was measured. The results show as follows. With the thickness of CdS window layer reducing from 100 to 50 nm, the transmission increase 18.3% averagely in short wavelength and the quantum efficiency of CdTe solar cells increase 27.6% averagely. The grain size of ZnS prepared in 250 degrees C is smaller than prepared at room temperature. The performance of CdTe solar cells with ZnS/CdS window layer is much better if ZnS deposited at 250 degrees C. This indicates grain size has some effect on the electron transportation. When the CdS holds the same thickness, the transmission of ZnS/CdS window layer was improved about 2% in short wavelength compared with CdS window layer. The quantum efficiency of CdTe solar cells with ZnS/CdS window layer was also improved about 2% in short wavelength compared with that based on CdS window layer. These indicate ZnS/CdS composite window layer can increase the photon transmission in short wavelength so that more photons can be absorbed by the absorbent layer of CdTe solar cells.

  6. Variable Temperature Current-Voltage Measurements of CdTe Solar Cells

    Science.gov (United States)

    Smith, A. D.

    2000-03-01

    We have used a 2" x 2" Peltier heat pump chip powered with 24 V from a computer power supply to build a variable temperature stage for current voltage measurements of solar cells. A voltage divider was used to achieve several different set point temperatures from 25 oC to -24 oC. This system was used with a halogen lamp to study the electrical performance of polycrystalline thin-film solar cells fabricated in our group. These cells have the superstrate structure glass/SnO2:F/CdS/CdTe/metal.(1) The I-V characteristic shows evidence of a blocking back-diode which sets in below room temperature. This behavior will be related to the diffusion into the CdTe of the metals used for our back contact.(2) 1. M. Shao, A. Fischer, D. Grecu, U. Jayamaha, E. Bykov, G. Contreras-Puente, R.G. Bohn, and A.D. Compaan, Appl. Phys. Lett. 69, 3045-3047 (1996). 2. D. Grecu and A.D. Compaan, Appl. Phys. Lett. 75, 361-363 (1999).

  7. Development of monocrystalline CdTe solar cells for terrestrial applications, especially for optical concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, H.; Fuessl, B.; Seipp, E.; Thiel, R.

    1981-01-01

    During the first phase of the contract most of the work was done in order to optimise the most important structural elements of the solar cells, which were produced on the base of crystalline CdTe. Two approaches in development of such cells were made: n-CdTe crystals were covered with a p-type heterolayer as a window for sunlight; ZnTe was evaporated as a p-type layer. p-CdTe crystals were covered with a n-type heterolayer as a window. Here, CdS evaporation layers and indium-tin-oxide (ITO) sputtered layers were applied. Within the first approach the realisation of ZnTe-layers simultaneously highly conductive and transparent was tried by using numerous dopants. Within the second approach, the development of p-CdTe/n-CdS solar cells, the resistances of the ohmic contacts on the back of the p-CdTe wafers were a major problem. We found some ways of preparing ohmic contacts of acceptable contact resistance, but an ideal problem solution is lacking still. We found a dependence of the contact resistance on the p-CdTe doping concentration. Solar cells made from p-CdTe crystals covered with n/sup +/-CdS attained an open circuit voltage of 655 mV and a short circuit current density of 13.8 mA/cm/sup 2/ in a 100 mW/cm/sup 2/ light. Assuming a sufficiently low series resistance we expect an efficiency of about 6 percent. Besides the n/sup +/-CdS layers n/sup +/-ITO-layers (indium-tin-oxide) were deposited on p-CdTe by sputtering. These cells exhibit a short circuit density a little higher but a lower open circuit voltage than the heterosolarcells with n/sup +/-CdS.

  8. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  9. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

    2014-04-01

    CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

  10. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Barrioz, V.; Monir, S.; Lamb, D.A.; Irvine, S.J.C.

    2015-03-02

    Cd{sub 1−x}Zn{sub x}S and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd{sub 1−x}Zn{sub x}S coatings were applied onto 15 × 15 cm{sup 2} float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd{sub 0.36}Zn{sub 0.64}S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd{sub 0.36}Zn{sub 0.64}S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd{sub 0.36}Zn{sub 0.64}S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells.

  11. Accelerated stress testing and diagnostic analysis of degradation in CdTe solar cells

    Science.gov (United States)

    Albin, David S.

    2008-08-01

    Solar cell module reliability is inextricably linked to cell-level reliability. This is particularly so with thin-film technologies. In CdTe, reliability issues historically associate with back contact stability and the use of Cu as an extrinsic dopant. Using a simple approach by which identical cells are heated under open-circuit bias and 1-sun illumination, degradation activation energies of 0.63 and 2.94 eV in laboratory-scale CdS/CdTe devices were identified in the accelerated stress temperature range of 60 to 120 °C. At lower stress temperatures, cell performance changes were linearly correlated with changes in both fill factor (FF) and short-circuit current (Jsc). At higher stress temperatures, changes in efficiency were correlated with changes in FF and open-circuit voltage (Voc). The measured activation energy of 0.63 is associated with Cu-diffusion. During the early stage of stress testing, which may provide additional back contact annealing, improvements in FF were due to Cu-diffusion. Decreased performance observed at longer stress times (decreased FF and Voc), according to a two-diode Pspice model, were due to both increased space-charge recombination (near the junction) and decreased recombination in the bulk. Kirkendall void formation (S-outdiffusion) at the CdS/CdTe interface is given as responsible for the 2.9 eV degradation mechanism.

  12. Spectroscopic study on the doping of polycrystalline CdTe layers for solar cells; Spektroskopische Untersuchungen zur Dotierung von polykristallinen CdTe-Schichten fuer Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian

    2011-11-29

    First in the present thesis the fundamental properties of CdTe are described. In the following it is discussed, how a CdTe solar cell is generally constructed, which specialities are to be regarded, and how an improvement of the actually reachable data of such a solar cell in view of the efficiency can be reached fundamentally and in then practical realization. In the third chapter the physical foundations of the most important methods are discussed, which are applied in the framework of this thesis for the analysis of the CdTe layers. The fourth chapter describes the details of the experiments of this thesis. The fifth chapter deals with the analysis of the photoluminescence of CdTe layers. Special attention is put on the analysis of the excitonic luminescence. The sixth chapter treats the implantation of CdTe layers with phosphor. The influence of phosphorus as dopant on the PL spectra of CdTe and the correponding characteristics of implanted solar cells are presented. Also the influence of radiation damages as consequence of the ion implantation is studied in this chapter by means of the analysis of differently thick absorber layers. In the seventh chapter finally a new procedure for the fabrication of solar cells on the base of CdTe as absorber material is introduced, which shall make possible to change the stoichiometry of cadmium mand tellurium specifically and to present additionally a suited material, in order to form the doping of CdTE a solar-cell material variably. The fundamental properties of the new facility are experimentally determined, and first solar cells are fabricated with this facility and analyzed. Also an in-situ doping with phosphorus is thereby performed and the result studied.

  13. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  14. Enhanced electrical properties at boundaries including twin boundaries of polycrystalline CdTe thin-film solar cells.

    Science.gov (United States)

    Li, H; Liu, X X; Lin, Y S; Yang, B; Du, Z M

    2015-05-07

    The effect of grain boundaries (GBs), in particular twin boundaries (TBs), on CdTe polycrystalline thin films is studied by conductive atomic force microscopy (C-AFM), electron-beam-induced current (EBIC), scanning Kelvin probe microscopy (SKPM), electron backscatter diffraction (EBSD), and scanning transmission electron microscopy (STEM). Four types of CdTe grains with various densities of {111} Σ3 twin boundaries (TBs) are found in Cl-treated CdTe polycrystalline thin films: (1) grains having multiple {111} Σ3 TBs with a low angle to the film surface; (2) grains having multiple {111} Σ3 TBs parallel to the film surfaces; (3) small grains on a scale of not more than 500 nm, composed of Cd, Cl, Te, and O; and (4) CdTe grains with not more than two {111} Σ3 TBs. Grain boundaries (including TBs) exhibit enhanced current transport phenomena. However, the {111} Σ3 TB is much more beneficial to micro-current transport. The enhanced current transport can be explained by the lower electron potential at GBs (including TBs) than the grain interiors (GIs). Our results open new opportunities for enhancing solar cell performances by controlling the grain boundaries, and in particular TBs.

  15. Polycrystalline CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, April 15, 1992--April 14, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. [Florida Solar Energy Center, Cape Canaveral, FL (United States)

    1994-08-01

    The principal objective of the research project is to develop processes for the fabrication of cadmium-telluride, CdTe, and copper-indium-gallium-diselenide, Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}, polycrystalline-thin-film solar cells using techniques that can be scaled-up for economic manufacture on a large scale. The aims are to fabricate CdTe solar cells using Cd and Te layers sputtered from elemental targets; to promote the interdiffusion between Cd/Te layers, CdTe phase formation, and grain growth; to utilize non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of Cu(In{sub l{minus}x}Ga{sub x})Se{sub 2} thin-film solar cells; to optimize selenization parameters; to improve adhesion; to minimize residual stresses; to improve the uniformity, stoichiometry, and morphology of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} thin films, and the efficiency of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} solar cells.

  16. Polycrystalline CuInSe{sub 2} and CdTe PV solar cells. Annual subcontract report, 15 April 1993--14 April 1994

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. [Florida Solar Energy Center, Cape Canaveral, FL (United States)

    1994-11-01

    This is an annual technical report on the Phase 2 of a three-year phased research program. The principal objective of the research project is to develop novel and low-cost processes for the fabrication of stable and efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe polycrystalline-thin-film solar cells using reliable techniques amenable to scale-up for economic, large-scale manufacture. The aims are to develop a process for the non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin-film solar cells; to optimize selenization parameters; to develop a process for the fabrication of CdTe solar cells using Cd and Te layers sputtered from elemental targets; to develop an integrated process for promoting the interdiffusion between Cd/Te layers, CdTe phase formation, grain growth, type conversion, and junction formation; to improve adhesion; to minimize residual stresses; to improve the metallic back-contact; to improve the uniformity, stoichiometry, and morphology of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe thin films; and to improve the efficiency of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  17. Effect of CdTe Deposition Conditions by Close Spaced Sublimation on Photovoltaic Properties of CdS/CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Han, B.W.; Ahn, J.H.; Ahn, B.T. [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

    1998-06-01

    CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thickness of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3 X 10{sup 4} {Omega}.cm. For constant substrate temperature the optimum substrate temperature for CdTe deposition was 600 deg. C. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 620 deg. C, and then deposited at 540 deg. C. The CdTe film was annealed at 620 deg. C and 600 deg. C sequentially to maintain the CdTe film quality. The photovoltaic cell efficiency improved by the two-wave process. For constant substrate temperature, the optimum thickness for CdTe was 5-6{mu}m. Above 6{mu}m CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the V{sub oc} remained almost constant, while J{sub sc} and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITO layer in this study was 300-450nm. In this experiment we obtained the efficiency of 9.4% in the 0.5cm{sup 2} cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency. (author). 9 refs.,10 figs.

  18. A low-cost non-toxic post-growth activation step for CdTe solar cells.

    Science.gov (United States)

    Major, J D; Treharne, R E; Phillips, L J; Durose, K

    2014-07-17

    Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 10(14) cm(-3)) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

  19. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico)]. E-mail: osvaldo@esfm.ipn.mx; Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Ruiz, C.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Sastre-Hernandez, J. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Morales-Acevedo, A. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); CINVESTAV-IPN, Electrical Engineering Department, Av. IPN No2508, C. P. 07360, Mexico, D. F. (Mexico); Cruz-Gandarilla, F. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Saucedo, E. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Bermudez, V. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain)

    2007-05-31

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J {sub sc}), open circuit voltage (V {sub OC}), fill factor (FF) and efficiency ({eta}) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed.

  20. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    Science.gov (United States)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  1. The effects of CdS processing and glass substrates on the performance of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Dugan, K.; Ceekala, V.; Killian, J.; Oman, D.; Swaminathan, R.; Morel, D.L. [Univ. of South Florida, Tampa, FL (United States). Dept. of Electrical Engineering

    1994-12-31

    Cadmium Sulfide films prepared by rf sputtering and close spaced sublimation (CSS) have been used for the fabrication of CdTe/CdS thin film solar cells on borosilicate glass substrates. The CdTe layer was prepared by CSS at high processing temperatures (600 C). CdS films prepared by the chemical bath deposition process (CBD) were deposited on tin oxide coated soda lime glass substrates. For these devices the CSS CdTe films were prepared at low substrate temperatures (< 550 C). Devices prepared at low processing temperatures (CdTe-CSS/CdS-CBD) on soda lime glass substrates exhibited efficiencies in excess of 13% as measured under AM 1.5 conditions at the National Renewable Energy Laboratory.

  2. Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Drayton, Jennifer A., E-mail: drjadrayton@yahoo.com; Geisthardt, Russell M., E-mail: Russell.Geisthardt@gmail.com; Sites, James R., E-mail: james.sites@colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Williams, Desiree D., E-mail: daisyw@rams.colostate.edu; Cramer, Corson L., E-mail: clcramer@rams.colostate.edu; Williams, John D., E-mail: john.d.williams@colostate.edu [Department of Mechanical Engineering, Colorado State University, Fort Collins, Colorado 80523 (United States)

    2015-07-15

    Molybdenum oxide (MoO{sub x}) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-ray photoelectron spectroscopy measurements show that partially crystalline MoO{sub x} films are created with a mixture of Mo, MoO{sub 2}, and MoO{sub 3} components. Lower crystallinity content is observed in the MoON films, with an additional component of molybdenum nitride present. Three different film thicknesses of MoO{sub x} and MoON were investigated that were capped in situ in Ni. Small area devices were delineated and characterized using current–voltage (J-V), capacitance–frequency, capacitance–voltage, electroluminescence, and light beam-induced current techniques. In addition, J-V data measured as a function of temperature (JVT) were used to estimate back barrier heights for each thickness of MoO{sub x} and MoON and for the C/Ni paint. Characterization prior to stressing indicated the devices were similar in performance. Characterization after stress testing indicated little change to cells with 120 and 180-nm thick MoO{sub x} and MoON films. However, moderate-to-large cell degradation was observed for 60-nm thick MoO{sub x} and MoON films and for C/Ni painted back contacts.

  3. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Science.gov (United States)

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  4. Sputtered CdTe thin film solar cells with Cu{sub 2}Te/Au back contact

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yongseob [Department of Photoelectronics Information, Chosun College of Science and Technology, Pilmudaero 309-1, Dong-gu, Gwangju 501-744 (Korea, Republic of); Lee, Suho; Yi, Junsin; Choi, Byung-Duck [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College, Daehak-ro 57, Nam-gu, Ulsan 680-749 (Korea, Republic of); Lee, Jaehyeong, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    In this work, Cu{sub 2}Te/Au back contact for CdTe thin film solar cells were prepared by vacuum evaporation. Influence of annealing temperature on the structure and electrical properties of Cu{sub 2}Te films were investigated by field emission scanning electron microscope, X-ray diffraction, and Hall effect measurement. Also, CdS/CdTe thin film solar cells were fabricated by magnetron sputtering process, which is favorable for large area deposition and mass production, and the photovoltaic characteristics were studied. As the annealing temperature was increased, the crystal structure transformed from Cu{sub 2}Te for as-deposited film to Cu{sub 2−x}Te hexagonal phase, and the grains in the film became bigger. The electrical resistivity was slightly higher by the annealing. The cell efficiency was significantly improved by the heat treatment, and showed a maximum value of 9.14% at 180 °C. From these results, Cu{sub 2}Te/Au contact acts as the proper pseudo-ohmic contact onto CdTe film. However, further increase of annealing temperature caused the deterioration of cell performance. - Highlights: • Annealing effects of the vacuum evaporated Cu{sub 2}Te films were investigated. • The transformation from Cu{sub 2}Te to Cu{sub 2−x}Te hexagonal phase occurred by annealing. • The performance of the solar cell was highly increased by annealing at 180 °C. • Cu{sub 2}Te/Au contact acts as the proper pseudo-ohmic contact onto CdTe film.

  5. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    OpenAIRE

    Matin, M.A.; Tomal, M. U.; A. M. Robin; N. Amin

    2013-01-01

    This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF) using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures). A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF ...

  6. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  7. Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

    1998-09-01

    An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

  8. Preparation and Properties of CdTe Polycrystalline Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    ZHENG Huajing; ZHANG Jingquan; FENG Lianghuan; ZHENG Jiagui; CAI Wei; LI Bing; CAI Yaping

    2006-01-01

    The structure and characteristics of CdTe thin films are closely dependent on the whole deposition process in close-space sublimation (CSS). The physical mechanism of CSS was analyzed and the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The results indicate: the samples deposited at different pressures have a cubical structure of CdTe and the diffraction peaks of CdS and SnO2∶F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate temperature of 500 ℃ and a source temperature of 620 ℃, the polycrystalline thin films can be made, so the production of high-quality integrated cell with SnO2:F/CdS/CdTe/Au structure is hopeful.

  9. Emerging materials for solar cell applications: electrodeposited CdTe. Second quarter report, May 16-August 15, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Basol, B.; Stafsudd, O.

    1980-09-10

    Work was centered about improving electroplating processes and cell fabrication techniques, with emphasis being given to three differing n-CdTe/Au Schottky configurations. The highest values of efficiency-related parmeters achieved with a simulated solar irradiation of 100 mW/cm/sup 2/ were 0.57V for open circuit voltage, 0.6 for fill factor, and 6 mA/cm/sup 2/ for short circuit current. Four important parameters are known to control the quality of the Monosolar electrodeposition process and resultant solar cells. They are electrolyte temperature, Te concentration in the solution at a specific pH, deposition or quasi-rest potential, and flow pattern of the electrolyte (stirring). The first three considerations are believed to be fully understood and optimized. Work is underway to further understand the effects of stirring on the diffusion of ionic components and the effects on CdTe film performance. Work was accelerated during the quarter to increase the short circuit current. Parallel programs using laser irradiation of finished CdTe films, heat treatment, and changes in the electrodeposition process itself to recrystallize films were started. The surface etching technique has been highly refined, while the entire cell manufacturing process is now reproducible when defect-free substrates are used.

  10. Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.; Abbas, Ali; Burst, James M.; Mahabaduge, Hasitha P.; Metzger, Wyatt K.; Walls, John M.; Lonergan, Mark C.; Barnes, Teresa M.; Wolden, Colin A.

    2016-12-01

    Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

  11. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Science.gov (United States)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O2 pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm2. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O2 flow. Through this method, the compact and uniform CdTe film (30 × 40 cm2) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm2) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (Jsc) of the cell is 26.9 mA/cm2, open circuit voltage (Voc) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  12. NUMERICAL SIMULATION AND OPTIMIZATION OF PERFORMANCES OF A SOLAR CELL BASED ON CdTe

    Directory of Open Access Journals (Sweden)

    A. M. Ferouani

    2015-07-01

    Full Text Available This article has as an aim the study and the simulation of the photovoltaic cells containing CdTe materials, contributing to the development of renewable energies, and able to feed from the houses, the shelters as well as photovoltaic stations… etc. CdTe is a semiconductor having a structure of bands with an indirect gap of a value of 1,5 eV at ambient temperature what means that photon wavelength of approximately 1200 nm will be able to generate an electron-hole pair. One speaks about photogeneration. We will lay the stress, initially, on the essential design features of a photovoltaic module (the open-circuit tension, the short-circuit current, the fill factor, and the output of the cell, our results was simulated with the SCAPS computer code in one dimension which uses electrical characteristics DC and AC of the thin layers heterojunctions. The results obtained after optimization are: VCO = 0.632V, Jsc = 39.1 mA/cm2, FF=82.98 % and the output energy of conversion is 18.26%.Optimization is made according to the temperature and the wavelength.

  13. Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

    Energy Technology Data Exchange (ETDEWEB)

    Morel, D. L.; Ferekides, C. S.; Bhatt, R.; Jayapalan, A.; Komin, V.; Lin, H.; Marinskiy, D.; Marinskaya, S.; Narayanaswamy, R.; Poosarla, U; Prabhakaran, R.; Sankaranarayanan, H.; Tetali, B.; Viswanathan, V.; Zafar, S. (Department of Electrical Engineering: The University of South Florida: Tampa, Florida)

    1999-01-13

    This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments.

  14. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  15. CdTe solar cell degradation studies with the use of CdS as the window material

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Perez, R. [Universidad Autonoma de la Ciudad de Mexico, Av. Prolongacion San Isidro Num. 151, Col. San Lorenzo Tezonco, C.P. 09790 Mexico, D.F. (Mexico); Escuela Superior de Fisica y Matematicas del IPN., Edificio 9, U.P.A.L.M., Col. Lindavista, C.P. 07738 Mexico, D.F. (Mexico); Sastre-Hernandez, J.; Contreras-Puente, G.; Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN., Edificio 9, U.P.A.L.M., Col. Lindavista, C.P. 07738 Mexico, D.F. (Mexico)

    2009-01-15

    We present in this work the degradation effects with time in thin film CdTe/CdS solar cells, where the CdS and CdTe layers are deposited by chemical bath deposition (CBD) and close space vapor transport (CSVT), respectively. The CdS thin films were grown from different baths by varying the S/Cd ratio. The variation of the S/Cd ratio allowed us to control the morphology and the density of defects, thus giving rise to better quality CBD CdS films. Depending on the S/Cd ratio an improvement of the morphology and capacitance signal was observed, these factors have also an influence on the open-circuit voltage, short-circuit current density, fill factor and conversion efficiency of the solar cell. The variation with time of these parameters in our devices was tracked during a period of 3 years measured directly on the exposed back contact regions (CdTe/Cu/Au). A discussion on the deterioration of the photovoltaic (PV) performance of the solar cells is presented in correlation with the local environmental conditions. This particular environment has contamination, and represents another type of stress for standard PV operations. These conditions reduce the mean life time of solar cells beyond short periods; this can be of interest for PV community. (author)

  16. CdTe thin film solar cells. Optimization of material, morphology and device preparation

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J.; Barati, A.; Krishnakumar, V.; Fu, G.; Schimper, H.J.; Haindl, A.; Swirschuk, A.; Gunnesch, E.; Schneikart, A.; Tueschen, A.; Klein, A.; Jaegermann, W. [Technische Univ. Darmstadt (Germany). Fachbereich Materialwissenschaft

    2010-07-01

    Correlations between layer-morphology and electrical properties are shown. At substrate temperatures between 330 C and 380 C the layer-morphology is similar to that obtained at the typically used high temperatures above 500 C. First results showed promising efficiencies for growth temperatures around 350 C. With optimized layer-morphology, dense, pinhole-free layers can be achieved. With a CdTe thickness below 3 {mu}m and CdS layers thinner than 100 nm, each of them deposited by a two step process using two different substrate temperatures, efficiencies of more than 10% were reached. For ANTEC CdS/CdTe cells, alternative back contacts were made in an all-dry vacuum process without any need for wet chemical etching. Cell efficiencies close to the efficiencies obtained with wet processing (NP etching and Au back contact) were obtained. This was achieved without the use of highly diffusive copper. (orig.)

  17. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  18. Effect of ZnTe/ZnTe:Cu complex back-contact on device characteristics of CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnTe/ZnTe:Cu complex layers deposited by vacuum co-evaporation have been in- troduced to CdS/CdTe solar cells. The C-V and I-V curves have been investigated and the effects of un-doped ZnTe layer thickness as well as annealing temperatures on I-V characteristics of CdTe solar cells have been studied. The results show that the “roll over” and “cross over” phenomena of dark and light I-V curves can be eliminated by use of ZnTe/ZnTe:Cu layer and the fill factor for a typical sample has increased to 73%, where there is no high resistance transparent layer. The reasons have been discussed combined with the energy band diagram of CdTe solar cells.

  19. Close space sublimation of CdTe for solar cells and the effect of underlying layers

    OpenAIRE

    Wakeling, B. R.

    2010-01-01

    This work has focused on the design, construction and testing of a close space sublimation system for CdTe deposition. In addition, it also focused on variations to the treatment and fabrication procedures of the transparent conducting oxide and CdS layers prior to the CdTe deposition, in order to influence the structure and electrical properties of the CdTe/CdS interface. CdTe was deposited by the physical vapour process, close space sublimation. The equipment used was custom built for this ...

  20. The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells

    Science.gov (United States)

    Paudel, Naba R.; Grice, Corey R.; Xiao, Chuanxiao; Yan, Yanfa

    2014-07-01

    High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270 °C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O2/(O2 + Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270 °C decrease as the O2/(O2 + Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270 °C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270 °C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270 °C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

  1. Numerical modeling of CdS/CdTe and CdS/CdTe/ZnTe solar cells as a function of CdTe thickness

    Energy Technology Data Exchange (ETDEWEB)

    Amin, Nowshad [Department of Electrical, Electronic and System Engineering, Faculty of Engineering, National University of Malaysia (UKM), Bangi 43600, Selangor D.E (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, National University of Malaysia (UKM), Bangi 43600, Selangor D.E (Malaysia); Konagai, Makoto [Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2007-08-15

    CdTe-based solar cells have long been of interest for terrestrial usage because of their high potential conversion efficiency (in the range of 18-24%) with low-cost manufacturability and concern over environmental effects. In order to conserve material and address environmental pollution concerns as well as to reduce carrier recombination loss throughout the absorber layer, efforts have been carried out to decrease the thickness of the CdTe absorption layer to 1 {mu}m. As a result, to date, the experimental part of this study has realized cell efficiencies of 15.3% and 11.5% with 7 and 1.2-{mu}m-thick CdTe layers, grown by close-spaced sublimation (CSS) [N. Amin, T. Isaka, T. Okamoto, A. Yamada, M. Konagai, Jpn. J. Appl. Phys. 38 (8) (1999) 4666; N. Amin, T. Isaka, A. Yamada, M. Konagai, Sol. Energy Matter. Sol. Cells 67 (2001) 195]. Since some problems remain with such thin 1 {mu}m CdTe layers, possible methods to realize higher efficiency have been investigated using novel solar cell structures, with the help of numerical analyses tools. In the theory part of this study, numerical analysis with a 1-D simulation program named NSSP (Numerical Solar Cell Simulation Program) has been used to simulate these structures. We investigated the viability of CdTe thickness reduction to 1 {mu}m together with the insertion of higher band-gap materials (i.e., ZnTe) at the back contacts to reduce carrier recombination loss there. The study shows potential results of the thickness reduction of CdTe absorption layer for a conventional CdS/CdTe/Cu-doped C structure with around 16% efficiency for cells below 3 {mu}m CdTe. Decreases were found in spectral response that suggest from minority carrier recombination loss at the back contact interface. A higher band-gap material like ZnTe has been inserted to produce a back surface field (BSF) to inhibit the minority carrier loss at the back contact. An increase in the efficiency to about 20% has been found for a 1 {mu}m-thin CdTe cell

  2. The effects of the band bending caused by interface states in CdTe and CIS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youn-Jung; Gray, J.L. [Purdue Univ., Lafayette, IN (United States). School of Electrical Engineering

    1994-12-31

    In this paper, the effects of interface states in the Z-nO/CdS/CuinSe{sub 2}, and CdS/CdTe solar cells are presented. The effects are investigated through numerical modeling using ADEPT (A Device Emulation Program and Tool). The results show that donor-like interface states have very little effect but acceptor-like interface states at the resistive ZnO/CdS can cause pinning of the bands at the interface, thus leading to non-exponential illuminated I-V curves when the interface state densities are high enough. High density of acceptor-like states between the CdS and In-rich CIS does not result in the two-diode like IV curves. Instead they can significantly lower the fill factor. In the CdS/CdTe solar cells. either donor- or acceptor-like interface states have little effect since almost all the depletion region lies in the CdTe. Thus, the metallurgical junction where the interface states are located is away from the electrical junction where the conductivity type changes.

  3. Development of single crystal CdTe solar cell for terrestrial application, adapted for use in optical concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, H.; Fuessl, B.; Seipp, E.; Thiel, R.

    1981-01-01

    During the first phase of the contract most of the work was done in order to optimize the most important structural elements of the solar cells, which were produced on the base of crystalline CdTe. Two approaches in development of such cells were made. In the first, n-CdTe crystals were covered with a p-type heterolayer as a window for sunlight; ZnTe was evaporated as a p-type layer. In the second, p-CdTe crystals were covered with a n-type heterolayer as a window. Here, CdS evaporation layers and indium-tin-oxide (ITO) sputtered layers were applied. Within the first approach the realization of ZnTe-layers simultaneously highly conductive and transparent was tried by using numerous dopants. Success finally was attained in July. Within the second approach, the development of p-CdTe/n-CdS solar cells, the resistances of the ohmic contacts on the back of the p-CdTe wafers were a major problem. We found some ways of preparing ohmic contacts of acceptable contact resistance, but an ideal problem solution is lacking still. We found a dependence of the contact resistance on the p-CdTe doping concentration. Solar cells made from p-CdTe crystals covered with nn/sup +/-CdS attained on open circuit voltage of 655 mV and a short circuit current density of 13,8 mA/cm/sup 2/ in a 100 mW/cm/sup 2/ light. Assuming a sufficiently low series resistance we expect an efficiency of about 6 percent. Besides the /sup +/-CdS layers n/sup +/-ITO-layers (indium-tin-oxide) were deposited on p-CdTe by sputtering. These cells exhibit a short circuit density a little higher but a lower open circuit voltage than the heterosolarcells with n/sup +/-CdS.

  4. Enhancement of open-circuit voltage and the fill factor in CdTe nanocrystal solar cells by using interface materials.

    Science.gov (United States)

    Zhu, Jiaoyan; Yang, Yuehua; Gao, Yuping; Qin, Donghuan; Wu, Hongbin; Hou, Lintao; Huang, Wenbo

    2014-09-12

    Interface states influence the operation of nanocrystal (NC) solar cell carrier transport, recombination and energetic mechanisms. In a typical CdTe NC solar cell with a normal structure of a ITO/p-CdTe NCs/n-acceptor (or without)/Al configuration, the contact between the ITO and CdTe is a non-ohm contact due to a different work function (for an ITO, the value is ~4.7 eV, while for CdTe NCs, the value is ~5.3 eV), which results in an energetic barrier at the ITO/CdTe interface and decreases the performance of the NC solar cells. This work investigates how interface materials (including Au, MoO(x) and C₆₀) affect the performance of NC solar cells. It is found that devices with interface materials have shown higher V(oc) than those without interface materials. For the case in which we used Au as an interface, we obtained a high open-circuit voltage of 0.65 V, coupled with a high fill factor (62%); this resulted in a higher energy conversion efficiency (ECE) of 5.3%, which showed a 30% increase in the ECE compared with those without the interlayer. The capacitance measurements indicate that the increased V(oc) in the case in which Au was used as the interface is likely due to good ohm contact between the Au's and the CdTe NCs' thin film, which decreases the energetic barrier at the ITO/CdTe interface.

  5. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

    1992-04-01

    This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

  6. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    Science.gov (United States)

    Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-10-01

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  7. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  8. Fabrication of CdTe solar cells by laser-driven physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bhat, A.; Tabory, C.; Liu, S.; Nguyen, M.; Aydinli, A.; Tsien, L.H.; Bohn, R.G. (Toledo Univ., OH (USA). Dept. of Physics and Astronomy)

    1991-05-01

    Polycrystalline cadmium sulfide-cadmium telluride heterojunction solar cells were fabricated for the first time using a laser-driven physical vapor deposition method. An XeCl excimer laser was used to deposit both of the II-VI semiconductor layers in a single vacuum chamber from pressed powder targets. Results are presented from optical absorption. Raman scattering, X-ray diffraction, and electrical characterization of the films. Solar cells were fabricated by deposition onto SnO{sub 2}-coated glass with top contacts produced by gold evaporation. Device performance was evaluated from the spectral quantum efficiency and current-voltage measurements in the dark and with air mass 1.5 solar illumination. (orig.).

  9. NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

    Energy Technology Data Exchange (ETDEWEB)

    2016-05-01

    NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costs less than fossil fuels.

  10. Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe–ZnO Tunnel Junction

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, Ryan W.; Pach, Gregory F.; Kurley, J. Matthew; France, Ryan M.; Reese, Matthew O.; Nanayakkara, Sanjini U.; MacLeod, Bradley A.; Talapin, Dmitri V.; Beard, Matthew C.; Luther, Joseph M.

    2017-01-10

    We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ~1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (Eg = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm2 in prototype devices.

  11. Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe-ZnO Tunnel Junction.

    Science.gov (United States)

    Crisp, Ryan W; Pach, Gregory F; Kurley, J Matthew; France, Ryan M; Reese, Matthew O; Nanayakkara, Sanjini U; MacLeod, Bradley A; Talapin, Dmitri V; Beard, Matthew C; Luther, Joseph M

    2017-02-08

    We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ∼1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (Eg = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm(2) in prototype devices.

  12. Rational design of tetraphenylethylene-based luminescent down-shifting molecules: photophysical studies and photovoltaic applications in a CdTe solar cell from small to large units.

    Science.gov (United States)

    Li, Yilin; Li, Zhipeng; Ablekim, Tursunjan; Ren, Tianhui; Dong, Wen-Ji

    2014-12-21

    A rational design strategy of novel fluorophores for luminescent down-shifting (LDS) application was proposed and tested in this paper. Three new fluorophores (1a-c) with specific intramolecular charge transfer (ICT) and aggregation-induced emission (AIE) characteristics were synthesized as LDS molecules for increasing the output short circuit current density (Jsc) of a CdTe solar cell. Photophysical studies of their solution and solid states, and photovoltaic measurements of their PMMA solid films applied on a CdTe solar cell suggested that the specific spectroscopic properties and Jsc enhancement effects of these molecules were highly related to their chemical structures. The Jsc enhancement effects of these fluorophores were measured on both a CdTe small cell and a large panel. An increase in the output Jsc by as high as 5.69% for a small cell and 8.88% for a large panel was observed. Compared to a traditional LDS molecule, Y083, these fluorophores exhibited more superior capabilities of LDS.

  13. Opto-Electronic Characterization CdTe Solar Cells from TCO to Back Contact with Nano-Scale CL Probe

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Paudel, Naba; Mahabaduge, Hasitha; Kuciauskas, Darius; Guthrey, Harvey L.; Duenow, Joel; Yan, Yanfa; Metzger, Wyatt K.; Ahrenkiel, Richard K.

    2015-06-14

    We used cathodoluminescence (CL) (spectrum-per-pixel) imaging on beveled CdTe solar cell sections to investigate the opto-electronic properties of these devices from the TCO to the back contact. We used a nano-scale CL probe to resolve luminescence from grain boundary (GB) and grain interior (GI) locations near the CdS/CdTe interface where the grains are very small. As-deposited, CdCl2-treated, Cu-treated, and (CdCl2+Cu)-treated cells were analyzed. Color-coded CL spectrum imaging maps on bevels illustrate the distribution of the T=6 K luminescence transitions through the depth of devices with unprecedented spatial resolution. The CL at the GBs and GIs is shown to vary significantly from the front to the back of devices and is a sensitive function of processing. Supporting D-SIMS depth profile, TRPL lifetime, and C-V measurements are used to link the CL data to the J-V performance of devices.

  14. The activation of thin film CdTe solar cells using alternative chlorine containing compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B., E-mail: B.Maniscalco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); Abbas, A.; Bowers, J.W.; Kaminski, P.M.; Bass, K. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); West, G. [Department of Materials, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom)

    2015-05-01

    The re-crystallisation of thin film cadmium telluride (CdTe) using cadmium chloride (CdCl{sub 2}) is a vital process for obtaining high efficiency photovoltaic devices. However, the precise micro-structural mechanisms involved are not well understood. In this study, we have used alternative chlorine-containing compounds to determine if these can also assist the re-crystallisation of the CdTe layer and to understand the separate roles of cadmium and chlorine during the activation. The compounds used were: tellurium tetrachloride (TeCl{sub 4}), cadmium acetate (Cd(CH{sub 3}CO{sub 2}){sub 2}), hydrochloric acid (HCl) and zinc chloride (ZnCl{sub 2}). TeCl{sub 4} was used to assess the role of Cl and the formation of a Te-rich outer layer which may assist the formation of the back contact. (Cd(CH{sub 3}CO{sub 2}){sub 2}) and HCl were used to distinguish between the roles of cadmium and chlorine in the process. Finally, ZnCl{sub 2} was employed as an alternative to CdCl{sub 2}. We report on the efficacy of using these alternative Cl-containing compounds to remove the high density of planar defects present in untreated CdTe. - Highlights: • Cadmium chloride (CdCl{sub 2}) activation treatment • Alternative chlorine containing compounds • Microstructure analysis and electrical performances.

  15. Recent progress in CdTe solar cell research at SCI

    Science.gov (United States)

    Sasala, R. A.; Powell, R. C.; Dorer, G. L.; Reiter, N.

    1997-02-01

    Research at Solar Cells Inc. is focused on developing processes which will lead to high volume and low cost manufacturing of solar cells and to increase the performance of our present technology. The process research has focused on developing vapor transport deposition of the semiconductors, eliminating wet chemistry steps while minimizing the chloride treatment time, forming a low-loss back contact using only dry processing, and an improved interconnection technique. The performance improvement work has focused on the increase of the photocurrent by a combination of more transparent glass substrates and a thinner CdS window layer deposited on an i-SnO2 buffer layer. SCI record 13.0% 1 cm2 devices have been fabricated using these techniques. Stability monitoring continues and shows minimal degradation for over 20,000 hours of continuous light soak at 0.8 sun illumination.

  16. The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paudel, Naba R.; Grice, Corey R.; Xiao, Chuanxiao; Yan, Yanfa [Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

    2014-07-28

    High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270 °C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2} + Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270 °C decrease as the O{sub 2}/(O{sub 2} + Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270 °C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270 °C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270 °C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

  17. 11.6% efficient, all-sputtered CdTe solar cell on glass

    Science.gov (United States)

    Compaan, A. D.; Jayamaha, U. N.; Fischer, A.; Grecu, D.; Bykov, E.; Contreras-Puente, G.

    1997-03-01

    We discuss the fabrication of an 11.6% efficient, polycrystalline thin-film CdS/CdTe solar cell by planar-magnetron-radio-frequency sputtering.(M.Shao, et al, Appl. Phys. Lett. 69, 3045 (1996).) The two semiconductor layers were sputtered sequentially at 380 C on commercially available soda-lime glass superstrates coated with fluorine-doped tin oxide (TCO). The magnetron magnetic field is critical to obtaining high cell efficiency. Much stronger photoluminescence and higher electrical conductivity are found in films and cells grown with unbalanced-field vs. balanced-field magnetrons. The magnetic field dependence is interpreted as arising from the enhanced electron and ion bombardment of the film growth surface when unbalanced magnetrons are used. Preliminary data suggest that further improvements should be achievable with changes to the TCO/CdS window and the back contact.

  18. Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells

    Science.gov (United States)

    Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    2002-05-01

    N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Corning glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω \\cdotcm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Corning glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

  19. High-efficiency aqueous-solution-processed hybrid solar cells based on P3HT dots and CdTe nanocrystals.

    Science.gov (United States)

    Yao, Shiyu; Chen, Zhaolai; Li, Fenghong; Xu, Bin; Song, Jiaxing; Yan, Lulin; Jin, Gan; Wen, Shanpeng; Wang, Chen; Yang, Bai; Tian, Wenjing

    2015-04-08

    Without using any environmentally hazardous organic solution, we fabricated hybrid solar cells (HSCs) based on the aqueous-solution-processed poly(3-hexylthiophene) (P3HT) dots and CdTe nanocrystals (NCs). As a novel aqueous donor material, the P3HT dots are prepared through a reprecipitation method and present an average diameter of 2.09 nm. When the P3HT dots are mixed with the aqueous CdTe NCs, the dependence of the device performance on the donor-acceptor ratio shows that the optimized ratio is 1:24. Specifically, the dependence of the device performance on the active-layer thermal annealing conditions is investigated. As a result, the optimized annealing temperature is 265 °C, and the incorporation of P3HT dots as donor materials successfully reduced the annealing time from 1 h to 10 min. In addition, the transmission electron microscopy and atomic force microscopy measurements demonstrate that the size of the CdTe NCs increased as the annealing time increased, and the annealing process facilitates the formation of a smoother interpenetrating network in the active layer. Therefore, charge separation and transport in the P3HT dots:CdTe NCs layer are more efficient. Eventually, the P3HT dots:CdTe NCs solar cells achieved 4.32% power conversion efficiency. The polymer dots and CdTe NCs based aqueous-solution-processed HSCs provide an effective way to avoid a long-time thermal annealing process of the P3HT dots:CdTe NCs layer and largely broaden the donor materials for aqueous HSCs.

  20. Comparative study of trap densities of states in CdTe /CdS solar cells

    Science.gov (United States)

    Proskuryakov, Y. Y.; Major, J. D.; Durose, K.; Barrioz, V.; Irvine, S. J. C.; Jones, E. W.; Lamb, D.

    2007-10-01

    Density of deep and shallow states has been investigated in three different kinds of CdTe /CdS samples, two of which were grown by metal-organic chemical vapor deposition (MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were p doped by As and grown either with or without a ZnO buffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.

  1. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  2. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  3. The effect on CdS/CdTe solar cell conversion efficiency of the presence of fluorine in the usual CdCl2 treatment of CdTe

    OpenAIRE

    O. K. Echendu; Dharmadasa, I

    2015-01-01

    The addition of CdF2 to the CdCl2 solution used in the well-known CdCl2 treatment of CdS/CdTe solar cells has been observed to drastically improve the conversion efficiency of fully fabricated CdS/CdTe solar cells. The observed improvement is as a result of further enhancement of structural and optoelectronic properties of the CdCl2+CdF2-treated CdTe layers compared to the CdCl2-treated CdTe layers. A set of CdS/CdTe samples were grown by electrochemical deposition under different conditions ...

  4. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    Science.gov (United States)

    Yang, Xiaoyan; Liu, Bo; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-03-01

    A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with VOC of 772.92 mV, JSC of 25.11 mA/cm2 and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  5. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  6. Accelerated Stress Testing and Diagnostic Analysis of Degradation in CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D. S.

    2008-11-01

    The primary goal of this study was to ascertain the presence and types of mechanisms affecting CdS/CdTe device stability in the temperature range of 60 to 120 ..deg..C. It should be noted that the results presented were specific to cells made using the specific growth conditions described.

  7. Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

    1992-09-01

    This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

  8. Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Guangcan Luo

    2014-01-01

    Full Text Available The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

  9. Improving Electron Transfer from Dye to TiO2 by Using CdTe Nanostructure Layers in Dye-Sensitized Solar Cells

    Science.gov (United States)

    Beshkar, Farshad; Sabet, Mohammad; Salavati-Niasari, Masoud

    2015-08-01

    In this work, TiO2 P25 was deposited successfully on the FTO glass by electrophoresis method. Different chemical methods were served for deposition of nanosized CdTe such as successive ion layer adsorption and reaction (SILAR) and drop-cast. Dye-sensitized solar cells were fabricated from prepared electrodes, Pt as a counter electrode, dye solution, and electrolyte. The effects of chemical deposition methods were investigated on the surface quality, optical properties, and solar cell efficiency. It was observed that deposition method has an important role on the solar cell performance. It was also seen that deposition method affects directly on surface thickness and the amount of dye adsorption. In fact, each deposition method creates different surfaces, and hence, they act variously in electron transfer across the electrode surface. Among different deposition methods that were used in this experimental work, SILAR method showed the best performance and the surface that was created by this method could transfer the electrons across the electrode faster than the other ones. But this chemical method cannot improve solar cell efficiency due to some different reasons that we mentioned in this paper.

  10. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  11. Rectification and tunneling effects enabled by Al{sub 2}O{sub 3} atomic layer deposited on back contact of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Jun; Lin, Qinxian; Li, Hao; Su, Yantao; Yang, Xiaoyang; Wu, Zhongzhen; Zheng, Jiaxin; Wang, Xinwei; Lin, Yuan; Pan, Feng, E-mail: panfeng@pkusz.edu.cn [School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055 (China)

    2015-07-06

    Atomic layer deposition (ALD) of Aluminum oxide (Al{sub 2}O{sub 3}) is employed to optimize the back contact of thin film CdTe solar cells. Al{sub 2}O{sub 3} layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al{sub 2}O{sub 3} deposition, compared with the efficiency of 10.7% without Al{sub 2}O{sub 3} modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al{sub 2}O{sub 3} maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al{sub 2}O{sub 3} modification layer features a desired low-density of interface state of 8 × 10{sup 10 }cm{sup −2} by estimation.

  12. Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R.

    2012-04-01

    The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

  13. Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

    2009-05-01

    Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

  14. Study of the Mg incorporation in CdTe for developing wide band gap Cd{sub 1-x}Mg{sub x}Te thin films for possible use as top-cell absorber in a tandem solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  15. Optimization of the front contact to minimize short-circuit current losses in CdTe thin-film solar cells

    Science.gov (United States)

    Kephart, Jason Michael

    With a growing population and rising standard of living, the world is in need of clean sources of energy at low cost in order to meet both economic and environmental needs. Solar energy is an abundant resource which is fundamentally adequate to meet all human energy needs. Photovoltaics are an attractive way to safely convert this energy to electricity with little to no noise, moving parts, water, or arable land. Currently, thin-film photovoltaic modules based on cadmium telluride are a low-cost solution with multiple GW/year commercial production, but have lower conversion efficiency than the dominant technology, crystalline silicon. Increasing the conversion efficiency of these panels through optimization of the electronic and optical structure of the cell can further lower the cost of these modules. The front contact of the CdTe thin-film solar cell is critical to device efficiency for three important reasons: it must transmit light to the CdTe absorber to be collected, it must form a reasonably passive interface and serve as a growth template for the CdTe, and it must allow electrons to be extracted from the CdTe. The current standard window layer material, cadmium sulfide, has a low bandgap of 2.4 eV which can block over 20% of available light from being converted to mobile charge carriers. Reducing the thickness of this layer or replacing it with a higher-bandgap material can provide a commensurate increase in device efficiency. When the CdS window is made thinner, a degradation in electronic quality of the device is observed with a reduction in open-circuit voltage and fill factor. One commonly used method to enable a thinner optimum CdS thickness is a high-resistance transparent (HRT) layer between the transparent conducting oxide electrode and window layer. The function of this layer has not been fully explained in the literature, and existing hypotheses center on the existence of pinholes in the window layer which are not consistent with observed results

  16. A pilot investigation on laser annealing for thin-film solar cells: Crystallinity and optical properties of laser-annealed CdTe thin films by using an 808-nm diode laser

    Science.gov (United States)

    Kim, Nam-Hoon; Park, Chan Il; Park, Jinseong

    2013-02-01

    Compared to conventional furnace and rapid thermal annealing, laser annealing for heterojunctioned thin-film solar cells has several advantages including excellent annealing selectivity to the under-layers with a localized high temperature for a short process time. A continuous wave 808-nm diode laser was used for the laser annealing process of CdTe thin films for various output powers. The grains in the laser-annealed CdTe thin films grew along the C (111), H (110), and C (311) planes. Laser annealing resulted in an increase in grain size and a decrease in surface roughness. The optical band gap energy of the CdTe thin films was affected directly by the grain size, showing 1.460 eV and 1.415 eV for the as-deposited and laser-annealed CdTe thin films, respectively. The absorbance of the CdTe thin films with better crystallinity showed an improved value of 99.5-99.9% in the visible spectral region after laser annealing at an output power of 0.91 W.

  17. CdTe devices and method of manufacturing same

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  18. Studies of key technologies for CdTe solar modules

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.

  19. Enhancing the output current of a CdTe solar cell via a CN-free hydrocarbon luminescent down-shifting fluorophore with intramolecular energy transfer and restricted internal rotation characteristics.

    Science.gov (United States)

    Li, Yilin; Olsen, Joseph; Dong, Wen-Ji

    2015-04-01

    A CN-free hydrocarbon fluorophore (Perylene-TPE) was synthesized as a new luminescent down-shifting (LDS) material. Its photophysical properties in both the solution state and the solid state were studied. The unity fluorescence quantum yield of Perylene-TPE observed in its solid state is considered to be from the characteristics of intramolecular energy transfer (IET) and restricted internal rotation (RIR). This is supported by the results from theoretical calculations and spectroscopic measurements. For the photovoltaic application of Perylene-TPE, a theoretical modeling study suggests that using the LDS film of Perylene-TPE may increase the output short circuit current density (Jsc) of a CdTe solar cell by 2.95%, enhance the spectral response of a CdTe solar cell at 400 nm by 41%, and shift the incident solar photon distribution from short-wavelength (500 nm). Experimentally, placing a LDS film of Perylene-TPE on a CdTe solar cell can enhance its output Jsc by as high as 3.30 ± 0.31%, which is comparable to the current commercially available LDS material – Y083 (3.28% ± 0.37%).

  20. 等离子体刻蚀对CdTe太阳电池性能的影响%Influence of plasma etching on the performance of CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    宋慧瑾; 鄢强

    2013-01-01

    In order to find suitable etching conditions for CdTe thin films in industrial production,different dry etching conditions are applied to CdTe solar cells in this paper. The performance parameters of J-V, C-V and spectral response are studied. It is indicated that the time and the power of plasma etching are too small to completely remove the oxide layer. On the contrary,the surface is damaged too seriously and the device's performance decreases. Estimated by the I-V characteristics,C-V characteristics and spectral response of CdTe thin film solar cells,the plasma etching process used in No. B7 sample is suitable for the post treatment of CdTe thin film solar cells. The conversion efficiency (10. 99%) of CdTe thin film solar cells with complex back contact layer and post treated by plasma etching is higher than the one (10. 26 % ) by bromine and methanol mixture corrosion. It can be seen that the dry plasma etching used for CdTe thin film solar cells is more suitable for industrial production than the wet etching.%采用不同干法腐蚀条件下的CdTe薄膜制成器件,通过I-V、C-V和光谱响应等测试了电池性能参数.结果表明,溅射时间太短和功率太小时不能完全去除氧化层,溅射时间过长和功率过高会对薄膜表面造成损伤,影响器件性能.通过选择器件性能较好的电池、找出适合等离子束溅射工艺的条件,所制成的电池转化效率达到10.99%;而湿法腐蚀所制成器件的转化效率为10.26%.由此可以认为,等离子束轰击溅射的腐蚀方法较湿法腐蚀更适用于CdTe太阳电池的制备.

  1. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., West Lafayette, IN (United States)

    1994-03-01

    Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

  2. Investigation on the Effect of the CdCl2 Treatment on CdTe Thin-film Solar Cells of Variable Thickness Fabricated Using Combinatorial Pulsed Laser Deposition

    Science.gov (United States)

    Kadhim, Ali Saber

    Cadmium Chloride (CdCl2) post annealing process has significant impacts on the performance of the CdS/CdTe solar cells since it affects the microstructure, crystallinity and charge carrier doping in CdTe films and also the CdS/CdTe p-n junction formed through S and Te interdiffusion at the junction interface. Therefore, this process has been investigated extensively during the past two decades, and has been optimized for polycrystalline CdS/CdTe thick film solar cells, in which the CdTe thickness is typically in the range of 3-8 microm. Nevertheless, the recent effort to develop cost-performance balanced thin film CdS/CdTe solar cells (with CdTe thickness on the order of 1 microm or less) has encountered difficulties through direct applications of the thick-film CdCl2 post annealing process. These difficulties stem from the large CdTe grain sizes typically in the range of microns in the thick film case. Grain boundaries between such large grains result in through-thickness shorts when the CdTe film thickness is comparable to or smaller than the grain size. Overcoming these difficulties to achieve precise controls of grain morphology, crystallinity and CdS/CdTe interface is important to high-performance CdS/CdTe thin film solar cells and will be the main objective of this thesis. In order to accelerate the study, a combinatorial Pulsed Laser Deposition technique (cPLD) was developed for deposition of CdTe films with different thicknesses on each sample to elucidate important physical properties of Cl diffusion through the selected thickness range at a given CdCl 2 annealing condition. Two sets of samples A and B of CdTe solar cells of multiple thicknesses of 1.5, 1.25, 1.0, and 0.75 microm have been fabricated by using cPLD. Sample A was completed without CdCl2 treatment as a reference, and sample B was treated with CdCl2 in different durations (10, 12, 15, and 17 min) at 360°C in mixed vapor of O2 and Argon (25 sccm:100 sccm). The sample that was treated at 15

  3. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

  4. Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

    Science.gov (United States)

    Phillips, Adam B.; Khanal, Rajendra R.; Song, Zhaoning; Watthage, Suneth C.; Kormanyos, Kenneth R.; Heben, Michael J.

    2015-12-01

    Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

  5. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R. (Colorado State Univ., Fort Collins, CO (United States))

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  6. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  7. Effect of Substrate Temperature on CdTe Thin Film Property and Solar Cell Performance%衬底温度对碲化镉薄膜性质及太阳电池性能的影响

    Institute of Scientific and Technical Information of China (English)

    曹胜; 武莉莉; 冯良桓; 王文武; 张静全; 郁骁骑; 李鑫鑫; 李卫; 黎兵

    2016-01-01

    Vapor transport deposition is an excellent method for preparing large area CdTe thin films with high quality and uniformity. Polycrystalline CdTe thin films were deposited by home-made vapor transport deposition system (VTD). The effects of substrate temperature on the property of CdTe film and the performance of CdTe solar cell were inves-tigated. CdTe thin films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), UV-Vis spectrometer, and Hall Effect system. The results show that the CdTe thin films deposited by vapor transport deposi-tion are cubic phase with a preferred orientation in (111) direction. The average grain size increases from 2mm to 6mm and the carrier concentration increases from 1.93×1010 cm–3 to 2.36×1013 cm–3 when the substrate temperature increases from 520 ℃ to 620 ℃. This suggests that high substrate temperature can increase the carrier density significantly due to the suppressed defect recombination. The performance of CdTe thin film solar cells deposited at different sub-strate temperatures demonstrates that high substrate temperature (610℃) can greatly improve the efficiency, open cir-cuit voltage and fill factor of the solar cells. But the substrate temperature higher than 610℃ will reduce the spectral response of the cells in long wavelength region, which results in the degradation of solar cell performance. The small-area CdTe thin film solar cell without back contact layer deposited at substrate temperature of 610℃ obtains the best conversion efficiency of 11.2%.%蒸汽输运法是制备高质量且大面积均匀的 CdTe 薄膜的一种优良的方法。采用自主研发的一套蒸汽输运沉积系统制备了 CdTe 多晶薄膜,并研究了衬底温度对 CdTe 薄膜性质及太阳电池性能的影响。利用 XRD、SEM、UV-Vis和Hall等测试手段研究了衬底温度对薄膜的结构、光学性质和电学性质的影响。结果表明,蒸汽输运法制备的CdTe薄

  8. 具有复合背接触层的 CdTe多晶薄膜太阳电池%Polycrystalline CdTe thin- film solar cells with complex back contact layers

    Institute of Scientific and Technical Information of China (English)

    覃文治; 夏庚培; 郑家贵; 李卫; 蔡伟; 冯良桓; 蔡亚平; 黎兵; 张静全; 武莉莉

    2005-01-01

    To improve the properties of back contacts of CdTe solar cells, ZnTe:Cu and polycrystalline Cd1- xZnxTe films were deposited by simultaneous evaporation. Investigative data of the configuration and performance indicate that energy gap of Cd1- xZnxTe films assume quadratic connection with zinc content. With increasing of Cu content, energy gap of polycrystalline ZnTe:Cu will decrease. ZnTe/ZnTe:Cu or Cd1- xZnxTe/ZnTe:Cu back contacted cells can reduce the heterogeneous interface state density and modify the structure of energy band of the solar cells. Furthermore, diffusion of Cu can avoid by this compound films in CdTe solar cells. An efficiency of 13.38% of solar cell with dimension of 0.502cm2was fabricated.%为了提高 CdTe太阳电池的背接触性能,用共蒸发法制备了 ZnTe:Cu和 Cd1- xZnxTe多晶薄膜. 研究结果表明: Cd1- xZnxTe多晶薄膜的能隙与锌含量呈二次方关系, ZnTe:Cu多晶薄膜能隙随着掺 Cu浓度的增加而减小.分别用 ZnTe/ZnTe:Cu和 Cd1- xZnxTe/ZnTe:Cu复合膜作为背接触层,既能 修饰异质结界面,改善电池的能带结构,又能防止 Cu原子向电池内部扩散.因此获得了面积 0.502cm2,转换效率为 13.38%的 CdTe多晶薄膜太阳电池.

  9. Advanced processing of CdTe- and CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2}-based solar cells. Phase 1 annual subcontract report, 18 April 1995--17 April 1996

    Energy Technology Data Exchange (ETDEWEB)

    Morel, D L; Ferekides, C S [Univ. of South Florida, Tampa, FL (United States)

    1997-03-01

    The main objective of this project to develop high-efficiency CdTe solar cells based on processing conditions favorable for manufacturing processes. This report presents the results on work performed during the first phase of this project. One of the major issues addressed is the use of soda-lime glass substrates in place of the borosilicate glass often used for laboratory devices; another task is the preparation of Cu(In, Ga) Se{sub 2} solar cells by selenizing suitable precursor films. Emphasis is placed on processing and how different reaction schemes affect device performance. It was found that different reaction schemes not only change the bulk properties of Cu(In, Ga) Se{sub 2}, but also its surface properties, which critically affect device performance. Although the objective is to optimize processing to meet the manufacturing constraints, work has not been limited within these requirements.

  10. Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, March 1, 1992--April 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Morel, D L; Ferekides, C S [University of South Florida, Tampa, FL (United States)

    1996-01-01

    This report describes work performed by the University of South Florida to develop a manufacturing-friendly fabrication process for CuInSe{sub 2} (CIS) solar cells. The process developed under this project uses conventional deposition processes and equipment, does not require stringent process control, and uses elemental Se as the selenium source. The authors believe it can be readily scaled up using off-the-shelf processing equipment and that it will meet the low manufacturing-cost objectives. Another significant achievement under this project was the development of a reactive sputtering deposition technology for ZnO. ZnO is used in many solar cell devices, and sputtering is a desirable manufacturing technology. The application of sputtering has been limited because conventional deposition uses ceramic targets that result in low sputtering rates. The use of Zn metal as the target in reactive sputtering overcomes this limitation. The authors have demonstrated that ZnO deposited by reactive sputtering has state-of-the-art opto-electronic properties. These developments result in large-area uniformity and optimized performance and provide a significant opportunity for applying and commercializing the technology. The second objective of this project was to fabricate high-efficiency CdTe solar cells using manufacturing-friendly processes. Three deposition processes were used to deposit CdS films: chemical bath deposition, rf sputtering, and close-spaced sublimation (CSS). The CdTe films were deposited by CSS. A cell with a record efficiency of 15.8% was obtained.

  11. Thin-film CdTe cells: Reducing the CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Plotnikov, V.; Liu, X.; Paudel, N.; Kwon, D.; Wieland, K.A.; Compaan, A.D., E-mail: alvin.compaan@utoledo.edu

    2011-08-31

    Polycrystalline thin-film CdTe is currently the dominant thin-film technology in world-wide PV manufacturing. With finite Te resources world-wide, it is appropriate to consider the limits to reducing the thickness of the CdTe layer in these devices. In our laboratory we have emphasized the use of magnetron sputtering for both CdS and CdTe achieving AM1.5 efficiency over 13% on 3 mm soda-lime glass with commercial TCO and 14% on 1 mm aluminosilicate glass. This deposition technique is well suited to good control of very thin layers and yields relatively small grain size which also facilitates high performance with ultra-thin layers. This paper describes our magnetron sputtering studies for fabrication of very thin CdTe cells. Our thinnest cells had CdTe thicknesses of 1 {mu}m, 0.5 {mu}m and 0.3 {mu}m and yielded efficiencies of 12%, 9.7% and 6.8% respectively. With thinner cells Voc, FF and Jsc are reduced. Current-voltage (J-V), temperature dependent J-V (J-V-T) and apparent quantum efficiency (AQE) measurements provide valuable information for understanding and optimizing cell performance. We find that the stability under light soak appears not to depend on CdTe thickness from 2.5 to 0.5 {mu}m. The use of semitransparent back contacts allows the study of bifacial response which is particularly useful in understanding carrier collection in the very thin devices.

  12. Superstrate sub-cell voltage-matched multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mascarenhas, Angelo; Alberi, Kirstin

    2016-03-15

    Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

  13. Wiring-up carbon single wall nanotubes to polycrystalline inorganic semiconductor thin films: low-barrier, copper-free back contact to CdTe solar cells.

    Science.gov (United States)

    Phillips, Adam B; Khanal, Rajendra R; Song, Zhaoning; Zartman, Rosa M; DeWitt, Jonathan L; Stone, Jon M; Roland, Paul J; Plotnikov, Victor V; Carter, Chad W; Stayancho, John M; Ellingson, Randall J; Compaan, Alvin D; Heben, Michael J

    2013-11-13

    We have discovered that films of carbon single wall nanotubes (SWNTs) make excellent back contacts to CdTe devices without any modification to the CdTe surface. Efficiencies of SWNT-contacted devices are slightly higher than otherwise identical devices formed with standard Au/Cu back contacts. The SWNT layer is thermally stable and easily applied with a spray process, and SWNT-contacted devices show no signs of degradation during accelerated life testing.

  14. Improved performance of silicon nanowire/cadmium telluride quantum dots/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhaoyun [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Jiangsu University of Science and Technology, Zhenjiang 212003, Jiangsu Province (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Renqi; Xue, Zhaoguo; Wang, Hongyu; Xu, Jun; Yu, Yao; Su, Weining; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2015-04-15

    Highlights: • We introduce an intermediate cadmium telluride quantum dots (CdTe QDs) layer between the organic with silicon nanowires of hybrid solar cells as a down-shifting layer. • The hybrid solar cell got the maximum short circuit current density of 33.5 mA/cm{sup 2}, getting an increase of 15.1% comparing to solar cell without CdTe QDs. • The PCE of the hybrid solar cells with CdTe QDs layer increases 28.8%. - Abstract: We fabricated silicon nanowire/cadmium telluride quantum dots (CdTe QDs)/organic hybrid solar cells and investigated their structure and electrical properties. Transmission electron microscope revealed that CdTe QDs were uniformly distributed on the surface of the silicon nanowires, which made PEDOT:PSS easily filled the space between SiNWs. The current density–voltage (J–V) characteristics of hybrid solar cells were investigated both in dark and under illumination. The result shows that the performance of the hybrid solar cells with CdTe QDs layer has an obvious improvement. The optimal short-circuit current density (J{sub sc}) of solar cells with CdTe QDs layer can reach 33.5 mA/cm{sup 2}. Compared with the solar cells without CdTe QDs, J{sub sc} has an increase of 15.1%. Power conversion efficiency of solar cells also increases by 28.8%. The enhanced performance of the hybrid solar cells with CdTe QDs layers are ascribed to down-shifting effect of CdTe QDs and the modification of the silicon nanowires surface with CdTe QDs. The result of our experiments suggests that hybrid solar cells with CdTe QDs modified are promising candidates for solar cell application.

  15. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe{sub 2} base layers

    Energy Technology Data Exchange (ETDEWEB)

    Khrypunov, G. S., E-mail: khrip@ukr.net; Sokol, E. I. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Yakimenko, Yu. I. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Meriuts, A. V. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine); Ivashuk, A. V. [National Technical University “Kyiv Polytechnic Institute”, Research Institute of Applied Electronics (Ukraine); Shelest, T. N. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine)

    2014-12-15

    The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe{sub 2} base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 μm. The gain in the efficiency of the tandem structure, compared with an individual CuInSe{sub 2}-based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected.

  16. CdS薄膜的制备及其在CdTe电池中的应用%Preparation of CdS films and their application in CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    韩俊峰; 廖成; 江涛; 赵夔

    2011-01-01

    The CdTe solar cell is one of the most popular thin film PV devices, and CdS is used as a suitable window layer for CdTe-based photovoltaic systems. The CdS films here were prepared by chemical bath depostion (CBD) and closed space sublimation (CSS). The complete CdTe/CdS solar cell devices were fabricated and analyzed. It was found that the films prepared by the CSS method have larger grains and better optical/electrical properties. The photoelectric conversion efficiency of such a solar cell comes up to 10.9%. The films deposited by CSS method is fast in vacuum system and suitable for commercial applications.%CdTe薄膜电池是发展最快、应用前景最好的一类太阳能电池.CdS层是CdTe电池的窗口层材.料,其薄膜质量直接影响电池的转换效率.本文介绍了化学水浴沉积(CBD)和闭空间升华(CSS)两种方法沉积CdS薄膜,并完成单电池器件的制备和测试.CSS方法制备的薄膜结晶较大,光学和电学性能好于CBD方法制备的薄膜,太阳能电池的光电转换效率达到10.9%.CSS方法镀膜速度快,真空环境工作,有利于大规模产业化应用.

  17. Correlation of Interfacial Transportation Properties of CdS/CdTe Heterojunction and Performance of CdTe Polycrystalline Thin-Film Solar Cells

    OpenAIRE

    Guanggen Zeng; Jingquan Zhang; Wenwu Wang; Lianghuan Feng

    2015-01-01

    The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS) were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 micron...

  18. 温场均匀性对CdTe薄膜及太阳电池性能的影响%Effect of the Uniformity of Temperature Field on the Properties of CdTe Films and Solar Cells

    Institute of Scientific and Technical Information of China (English)

    李愿杰; 郑家贵; 冯良桓; 黎兵; 曾广根

    2009-01-01

    The transformation of preparation temperature field of large area CdTe films was simulated, and the effect of temperature field' s uniformity on CdS/CdTe solar cells was investigated by the characteration of I -V,C -V and Deep Level Transient Spectroscopy(DLTS). The result showed that the uniformity of temperature field has effect on Isc and FF, but lacks impact on Voc. Least dark saturated current density,more higher carrier concentration and better photovoltaie performance were observed in the sample prepared at 580℃ ; The response of deep-level impuri-ties in CdTe films is consistent with temperature and frequency, but the sample(580 ℃) has less deep-level impu-rities' recombination because of lower hole trap concentration. 8.2% efficiency of the CdS/CdTe solar cells was reached by improved the uniformity of temperature field.%采用近空间升华法(CSS)制备CdTe多晶薄膜,模拟制备过程中的温场变化,结合,I-V、C-V特性及深能级瞬态谱研究温场均匀性对CdS/CdTe太阳电池性能的影响.结果表明,温场分布和薄膜厚度分布基本一致,温场均匀性对电池组件的开路电压影响不大,对短路电流和填充因子有影响,CdTe薄膜的深中心对温度和频率的响应基本一致.580℃制备的样品暗饱和电流密度最小,载流子浓度较高,光电特性较好,而且空穴陷阱浓度较低,深中心复合作用较小.通过改进温场的均匀性能够制备出组件转换效率为8.2%的CdS/CdTe太阳电池.

  19. Thin-film CdTe photovoltaic cells by laser deposition and rf sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R.G.; Bhat, A.; Tabory, C.; Shao, M.; Li, Y.; Savage, M.E.; Tsien, L. (Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606 (United States))

    1992-12-01

    Laser-driven physical vapor deposition (LDPVD) and radio-frequency (rf) sputtering have been used to fabricate thin-film solar cells on SnO[sub 2]-coated glass substrates. The laser-ablation process readily permits the use of several target materials in the same vacuum chamber and complete solar cell structures have been fabricated on SnO[sub 2]-coated glass using LDPVD for the CdS, CdTe, and CdCl[sub 2]. To date the best devices ([similar to]9% AM1.5) have been obtained after a post-deposition anneal at 400 [degree]C. In addition, cells have been fabricated with the combination of LDPVD CdS, rf-sputtered CdTe, and LDPVD CdCl[sub 2]. The performance of these cells indicates considerable promise for the potential of rf sputtering for CdTe photovoltaic devices. The physical mechanisms of LDPVD have been studied by transient optical spectroscopy on the laser ablation plume. These measurements have shown that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a large fraction which is highly excited internally ([ge]6 eV) and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. Quality of as-grown and annealed films has been analyzed by optical absorption. Raman scattering, photoluminescence, electrical conductivity, Hall effect, x-ray diffraction, and SEM/EDS.

  20. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  1. Correlation of Interfacial Transportation Properties of CdS/CdTe Heterojunction and Performance of CdTe Polycrystalline Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guanggen Zeng

    2015-01-01

    Full Text Available The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 microns and large electric field intensity of ~1.3 V/μm allow the sufficient energy-band bending close to CdS layer at CdS/CdTe heterojunction, which changes the carrier transportation mechanism from emission to diffusion and leads to the optimal rectifying characteristics with small dark saturation current density ~6.4 × 10−10 A/cm2. As a result, the schematic diagram of heterojunction band structure corresponding to various performances of solar cells has also been presented.

  2. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  3. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  4. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 1, April 9-July 8, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Vedam, K.

    1979-08-01

    Preparation and properties of cadmium telluride thin films for use in solar cells are studied. CdTe sputter deposition, crystal doping, and carrier typing are discussed. Future experimental plans are described. (WHK)

  5. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  6. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    Science.gov (United States)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  7. Photovoltaic properties of sintered CdS/CdTe solar cells doped with Cu

    Science.gov (United States)

    Park, J. W.; Ahn, B. T.; Im, H. B.; Kim, C. S.

    1992-11-01

    The effect of Cu doping before sintering on the photovoltaic properties of sintered CdS/CdTe solar cells were investigated by putting various amounts of CuCl2 either into the CdTe layer or into the back contact carbon layer. It was found that, as the amount of CuCl2 in the CdTe layers increased up to 25 ppm, the cell parameters of the sintered CdS/CdTe solar cells remained at about the same values, and then decreased sharply with further increase of CuCl2. The decreases in cell parameters are caused mainly by the increase in the resistivity of CdS and CdTe layer and the decrease in the optical transmission of CdS due to Cu doping from the CdTe.

  8. Semi-transparent solar cells

    Science.gov (United States)

    Sun, J.; Jasieniak, J. J.

    2017-03-01

    Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

  9. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Akis, Richard [Arizona State Univeristy; Brinkman, Daniel [Arizona State Univeristy; Sankin, Igor [First Solar; Fang, Tian [First Solar; Guo, Da [Arizona State Univeristy; Dragica, Vasileska [Arizona State Univeristy; Ringhofer, Christian [Arizona State University

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  10. Nanostructured Solar Cells

    Science.gov (United States)

    Chen, Guanying; Ning, Zhijun; Ågren, Hans

    2016-01-01

    We are glad to announce the Special Issue “Nanostructured Solar Cells”, published in Nanomaterials. This issue consists of eight articles, two communications, and one review paper, covering major important aspects of nanostructured solar cells of varying types. From fundamental physicochemical investigations to technological advances, and from single junction solar cells (silicon solar cell, dye sensitized solar cell, quantum dots sensitized solar cell, and small molecule organic solar cell) to tandem multi-junction solar cells, all aspects are included and discussed in this issue to advance the use of nanotechnology to improve the performance of solar cells with reduced fabrication costs.

  11. Solution-processing of ultra-thin CdTe/ZnO nanocrystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    MacDonald, Brandon I. [CSIRO, Materials Science and Engineering, Bayview Ave, Clayton, Victoria, 3168 (Australia); School of Chemistry and Bio21 Institute, The University of Melbourne, Parkville, Victoria, 3010 (Australia); Gengenbach, Thomas R.; Watkins, Scott E. [CSIRO, Materials Science and Engineering, Bayview Ave, Clayton, Victoria, 3168 (Australia); Mulvaney, Paul [School of Chemistry and Bio21 Institute, The University of Melbourne, Parkville, Victoria, 3010 (Australia); Jasieniak, Jacek J., E-mail: Jacek.Jasieniak@csiro.au [CSIRO, Materials Science and Engineering, Bayview Ave, Clayton, Victoria, 3168 (Australia)

    2014-05-02

    We have carried out a detailed study into how modifications of the physical, chemical and optical properties of solution-processed, nanocrystalline CdTe layers influence the photovoltaic performance of sintered CdTe/ZnO nanocrystal solar cells. Such solar cells are fabricated through layer-by-layer assembly, which is enabled through an inter layer chemical and thermal treatment cycle. In this manner we are able to fabricate working solar cells with sintered CdTe layers as low as 90 nm, provided that grain size is precisely controlled. We show that the extent of grain growth achieved during the CdTe sintering process is strongly dependent on nanocrystal surface chemistry and chemical environment, with the removal of the organic capping ligands and the introduction of CdCl{sub 2} prior to annealing leading to greatly enhanced growth. Due to the air processing involved and the nanocrystalline nature of the CdTe, the overall performance of these solar cells is shown to be strongly dependent on both annealing temperature and time, with optimal results requiring a balance between crystal growth and degradation due to oxidation. Using this simple bi-layer device structure, optimized treatment conditions result in power conversion efficiencies of up to 7.7% and peak internal quantum efficiencies in excess of 95%. - Highlights: • We study the growth of nanocrystalline CdTe thin films from colloidal nanocrystals. • We examine the CdTe growth profiles as a function of surface chemistry. • We show that nanocrystalline CdTe is susceptible to oxidation under air annealing. • We show how this oxidation influences performance in CdTe/ZnO solar cells. • We demonstrate CdTe/ZnO solar cells with an efficiency of 7.7% fabricated in air.

  12. Research on Spectrum of Conditions of Dry CdTe. Solar Cells Under and Wet Etching%干湿法腐蚀工艺条件下CdTe薄膜光谱研究

    Institute of Scientific and Technical Information of China (English)

    宋慧瑾; 鄢强

    2012-01-01

    The surface of CdTe thin films was etched by plasma bombardment sputtering and corroded by methyl bromide. The two types of spectnam properties of CdTe thin films were compared under the two con- ditions. The results show that plasma bombardment sputtering can remove the surface oxide layer completely and make the partiches of the thin films more even and compact, which show that compared with methyl bromide corrosion, it can improve micro-roughness of the surface and improve the quality of the crystal par- ticles and the adhesion of the film.%采用等离子束溅射轰击刻蚀和溴甲醇腐蚀对CdTe薄膜表面进行后处理.对比研究了2种腐蚀条件下CdTe薄膜的光谱特性.结果表明:等离子束溅射轰击刻蚀可以彻底清除CdTe薄膜表面的氧化层,刻蚀后的CdTe薄膜颗粒更为均匀致密,等离子体刻蚀与溴甲醇腐蚀相比,可以改善CdTe薄膜表面的粗糙度,增强薄膜的附着力,改善薄膜的性能.

  13. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ji-Hui; Park, Ji-Sang; Metzger, Wyatt [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Yin, Wan-Jian [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); College of Physics, Optoelectronics and Energy and Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Beijing Computational Science Research Center, Beijing 100094 (China)

    2016-01-28

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  14. Degradation processes occur on the CdTe thin films solar elements

    CERN Document Server

    Mirsagatov, S A; Makhmudov, M; Muzapharova, S A

    1999-01-01

    It is shown the Cu in CdTe polycristalline films is diffusing on the complex mechanism. By bringing of W atoms in thin CdTe layers it is possible to operate diffusion's speed of Cu atoms. Initiation of the (Cu sup + W sub C sub d sup -) complexes under the conditions N(W sub C sub d sup -)>=N(Cu sub i sup +) hardly reduce the diffusion velocity of Cu atoms.

  15. Nanocone Tip-Film Solar Cells with Efficient Charge Transport

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang Hyun [ORNL; Zhang, Xiaoguang [ORNL; Parish, Chad M [ORNL; Smith, Barton [ORNL; Xu, Jun [ORNL; Lee, Ho Nyung [ORNL

    2011-01-01

    Nanojunctions promise to provide higher charge transport efficiencies and less costly solar cell fabrication methods. We report a three-dimensional (3D) solar cell structure based on interdigitated nanojunctions formed with the tips of n-type ZnO nanocones embedded in a p-type polycrystalline (PX) CdTe film. This 3D nanocone tip-film cell, without optimization, enabled 3.2% power conversion efficiency, higher than that produced by a planar solar cell fabricated using the same materials. Reducing CdTe grain size and enriching the grain boundaries with chlorine improved the conversion efficiency for the tip-film structure. This higher conversion efficiency is attributable to improved charge transport in the nanojunction due to a combination of the high electric field generated in the CdTe and the utilization of the small junction area. The high field facilitates the extraction of minority carriers from the photoactive layer to the small junction region, while the use of the small junction area reduces the total electron recombination loss. The improved carrier transport in the nanocone tip-film junction implies that nanocone-based photovoltaic solar cells are capable of tolerating the imperfect materials produced using low-cost fabrication methods.

  16. High Efficiency c-Silicon Solar Cells Based on Micro-Nanoscale Structure

    Science.gov (United States)

    2011-06-01

    film materials: (1) amorphous Si (a-Si) (4), cadmium telluride ( CdTe ) (5), and copper indium diselenide (CIS) (6), which are the most mature thin ...microblock design and fabrication. Current thin - film and c-Si solar cells have a limited conversion efficiency of 10–20% and cost $3–$5/W-peak and state...more efficient solar cells has been underway for several decades, from the development of thin - film solar cells with efficiencies greater than 10

  17. Unique properties of halide perovskites as possible origins of the superior solar cell performance.

    Science.gov (United States)

    Yin, Wan-Jian; Shi, Tingting; Yan, Yanfa

    2014-07-16

    Halide perovskites solar cells have the potential to exhibit higher energy conversion efficiencies with ultrathin films than conventional thin-film solar cells based on CdTe, CuInSe2 , and Cu2 ZnSnSe4 . The superior solar-cell performance of halide perovskites may originate from its high optical absorption, comparable electron and hole effective mass, and electrically clean defect properties, including point defects and grain boundaries.

  18. High efficiency thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Britt, J.; Chen, G.; Ferekides, C.; Schultz, N.; Wang, C.; Wu, C. Q.

    1992-12-01

    Cadmium sulfide (CdS), grown from an aqueous solution, and zinc oxide (ZnO), cadmium zinc sulfide (Cd1-xZnxS), and zinc selenide (ZnSe), deposited by metalorganic chemical vapor deposition (MOCVD), have been used as the window for thin film cadmium telluride (CdTe) solar cells. Thin film solar cells were prepared by the successive deposition of the window and p-CdTe (by MOCVD and close-spaced sublimation, CSS) on SnO2:F/glass substrates. CdS/CdTe(CSS) solar cells show considerably better characteristics than CdS/CdTe(MOCVD) solar cells because of the better microstructure of CSS CdTe films. Total area conversion efficiency of 14.6%, verified by the National Renewable Energy Laboratory, has been achieved for solar cells of about 1 cm2 area. Solar cell prepared by using ZnO, ZnSe, or Cd1-xZnxS as window have significantly lower photovoltage than CdS/CdTe solar cells.

  19. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  20. High-Rate Vapor Deposition of Cadmium Telluride Films for Solar Cells

    Science.gov (United States)

    Khan, Nasim Akhter

    1992-01-01

    High rate vapor deposition is presently used for large scale low cost deposition of thin films for packaging and other applications. The feasibility of using this technology for low cost deposition of solar cells was explored. After an exhaustive literature survey, the cadmium telluride (CdTe) solar cell was found to be most suitable candidate for high rate vapor deposition. The high rate vapor deposition was investigated by sublimation with a short distance between sublimation source and the substrate (Close-Spaced Sublimation, CSS). Cadmium telluride (CdTe) solar cells were fabricated by depositing CdTe films at different rates on cadmium sulphide (CdS) films deposited by CSS or by evaporation. The CdTe films deposited at higher deposition rates were observed to have open circuit voltages (V_{ rm oc}) comparable to those deposited at lower rates. The effect of CdS film which acts as window layer for the cells were also investigated on the V_ {rm oc} of the solar cells. The results achieved proved the fact that CdS window layer is necessary to achieve higher V_{ rm oc} from solar cells. The substrate temperature during deposition of films by close space sublimation plays a vital role in the performance of solar cell. The increase in the substrate temperature during deposition of CdTe films increased the V_{rm oc} of solar cells. The solar cells with indium tin oxide (ITO) as top conductor, i.e. ITO/CdS/CdTe configuration were fabricated at rates up to 34 mum/minute and with tin oxide (TO) i.e. TO/CdTe configuration fabricated at rates up to 79 mum/minute have shown similar V_{rm oc} compared to those produced at lower rates. Higher CdTe film deposition rates are possible with larger capacity experimental setup. The method of contacting CdTe, used in this study, results in higher series resistance. An improved method of contacting CdTe needs to be developed.

  1. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    Directory of Open Access Journals (Sweden)

    Shi Lixin

    2011-01-01

    Full Text Available Abstract Cadmium telluride quantum dots (Cdte QDs have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  2. Post-growth CdCl₂ treatment on CdTe thin films grown on graphene layers using a close-spaced sublimation method.

    Science.gov (United States)

    Jung, Younghun; Yang, Gwangseok; Chun, Seungju; Kim, Donghwan; Kim, Jihyun

    2014-05-05

    We investigated the morphological, structural and optical properties of CdCl₂-treated cadmium telluride (CdTe) thin films deposited on defective graphene using a close-spaced sublimation (CSS) system. Heat treatment in the presence of CdCl₂ caused recrystallization of CSS-grown CdTe over the as-deposited structures. The preferential (111) orientation of as-deposited CdTe films was randomized after post-growth CdCl₂ treatment. New small grains (bumps) on the surface of CdCl₂-treated CdTe films were ascribed to nucleation of the CdTe grains during the CdCl₂ treatment. The properties of as-deposited and CdCl₂-treated CdTe films were characterized by room temperature micro-photoluminescence, micro-Raman spectroscopy, scanning electron microscopy, and X-ray diffraction analysis. Our results are useful to demonstrate a substrate configuration CdTe thin film solar cells.

  3. Nanostructured Organic Solar Cells

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

    Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

  4. Solar Photovoltaic Cells.

    Science.gov (United States)

    Mickey, Charles D.

    1981-01-01

    Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

  5. PEROVSKITE SOLAR CELLS (REVIEW ARTICLE)

    OpenAIRE

    Benli, Deniz Ahmet

    2015-01-01

    A solar cell is a device that converts sunlight into electricity. There are different types of solar cells but this report mainly focuses on a type of new generation solar cell that has the name organo-metal halide perovskite, shortly perovskite solar cells. In this respect, the efficiency of power conversion is taken into account to replace the dominancy of traditional and second generation solar cell fields by perovskite solar cells. Perovskite solar cell is a type of solar cell including a...

  6. Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling

    OpenAIRE

    Nowshad Amin; Matin, M.A.; Aliyu, M. M.; M. A. Alghoul; Karim, M. R.; K. Sopian

    2010-01-01

    Polycrystalline CdTe shows greater promises for the development of cost-effective, efficient, and reliable thin film solar cells. Results of numerical analysis using AMPS-1D simulator in exploring the possibility of ultrathin, high efficiency, and stable CdS/CdTe cells are presented. The conventional baseline case structure of CdS/CdTe cell has been explored with reduced CdTe absorber and CdS window layer thickness, where 1 μm thin CdTe and 50 nm CdS layers showed reasonable efficiencies over...

  7. Preparation of luminescent CdTe quantum dots doped core-shell nanoparticles and their application in cell recognition

    Institute of Scientific and Technical Information of China (English)

    LI Zhaohui; WANG Kemin; TAN Weihong; LI Jun; FU Zhiying; WANG Yilin; LIU Jianbo; YANG Xiaohai

    2005-01-01

    Based on the reverse microemulsion technique, luminescent quantum dots doped core-shell nanoparticles have been prepared by employing silica as the shell and CdTe quantum dots as the core of the nanoparticles, which have an excellent solubility and dispersibility, especially amine and phosphonate groups have been modified on their surface synchronously. In comparison with CdTe quantum dots, these nanoparticles show superiority in chemical and photochemical stability. The quantum dots doped core-shell nanoparticles were successfully linked with lactobionic acid by amine group on it, which was used to recognize living liver cells.

  8. 12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation

    Science.gov (United States)

    Schaffner, Judith; Motzko, Markus; Tueschen, Alexander; Swirschuk, Andreas; Schimper, Hermann-Josef; Klein, Andreas; Modes, Thomas; Zywitzki, Olaf; Jaegermann, Wolfram

    2011-09-01

    We report 12% efficient CdS/CdTe thin film solar cells prepared by low temperature close space sublimation (CSS). Both semiconductor films, CdS and CdTe, were deposited by high vacuum CSS in superstrate configuration on glass substrates with fluorine doped tin oxide (FTO) front contact. The CdTe deposition was carried out at a substrate temperature (Tsub) of ≤340 ∘C, which is much lower than that used in conventional processes (>500 ∘C). The CdTe films were treated with the usual CdCl2 activation process. Different optimal annealing times and temperatures were found for low-temperature cells (Tsub≤ 340 ∘C) compared to high-temperature cells (Tsub = 520 ∘C). The influence of the activation step on the morphology of high-temperature and low-temperature CdTe is determined by XRD, AFM, SEM top views, and SEM cross-sections. Grain growth, strong recrystallization, and a reduction of planar defects during the activation step are observed, especially for low-temperature CdTe. Further, the influence of CdS deposition parameters on the solar cell performance is investigated by using three different sets of parameters with different deposition rates and substrate temperatures for the CdS preparation. Efficiencies about 10.9% with a copper-free back contact and 12.0% with a copper-containing back contact were achieved using the low temperature CdTe process.

  9. Manufacture method of a solar cell. Taiyo denchi no seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Kitamura, S.; Hanabusa, A.; Arita, T.; Murosono, M.

    1993-12-24

    Conventional manufacture methods of a CdS/CdTe solar cell have problems that a blurred layer of CdTe printing and a redeposition layer of CdTe firing exist at a CdS contact surface and the contact width between the CdS film and its electrode AgIn film is required to be larger than 0.30 mm in order to reduce the contact resistance and to give a highly efficient solar cell. This invention aims to provide a manufacture method of a solar cell in which a CdS film of the window layer and a CdTe film of the optical absorption layer are stacked successively followed by the formation of a carbon film as an acceptor material on the CdTe film, and the surface of the CdS film is treated by laser irradiation by the use of a mask of the carbon film. Consequently, a clean surface is obtained between the CdS film and the electrode AgIn film so as to reduce the contact resistance and the contact width between the CdS film and the AgIn film can be reduced so that a highly efficient solar cell can be produced. 5 figs.

  10. Study of Cu-related Defect States in Single-crystal CdTe

    Science.gov (United States)

    Corwine, Caroline; Sites, James; Gessert, Timothy; Metzger, Wyatt; Dippo, Pat; Duda, Anna

    2003-10-01

    We have studied single-crystal CdTe using low-temperature photoluminescence (PL) in an effort to understand the effects of copper on the deep levels, as well as the effect of a bromine methanol (BrMe) etch on subsequent copper diffusion into CdTe. In present polycrystalline CdS/CdTe solar cell technology, the use of a back contact that contains Cu is necessary to produce high-efficiency cells. However, it is not generally understood why Cu is necessary for these devices to function well. In order to obtain further advances in the efficiencies of these solar cells, it is important to know how the back contact process may affect the defect states in CdTe. PL is one tool used to study defect states. However, before PL can be used effectively for polycrystalline CdTe solar cells, relevant spectral features first must be interpreted for single-crystal CdTe. All PL in this study was taken at 4.5 K. We report on PL peaks at 1.40 and 1.45 eV, which are seen only after Cu is diffused into single-crystal CdTe.

  11. Fabrication of CdS/CdTe solar cells with transparent p-type conductive BaCuSeF back contact

    Science.gov (United States)

    Yamamoto, Koichi; Sakakima, Hiroshi; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Wada, Takahiro

    2015-08-01

    BaCuSeF films were applied to CdS/CdTe solar cells as back electrodes. The interfaces between the CdTe and BaCuSeF layers in the CdS/CdTe solar cells with BaCuSeF back contact deposited at substrate temperatures (TS) of 200 and 300 °C were analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). We clearly observed many dislocations in the CdTe layer in the CdS/CdTe solar cell with the BaCuSeF layer deposited at TS = 300 °C. We also observed a reaction layer of Cu2.72Te2 between the BaCuSeF and CdTe layers in both solar cells. We concluded that (1) the substrate temperature for the pulsed laser deposition of the BaCuSeF layer and (2) the interface between the CdTe and BaCuSeF layers are important factors for the performance of the CdTe solar cells. We obtained high conversion efficiency of 8.31% for a solar cell with a BaCuSeF layer deposited at TS = 200 °C on a CdTe surface etched in a NH3 aqueous solution. The highest conversion efficiency of 9.91% was obtained for a solar cell with a CdTe surface etched in a bromide-bromate solution.

  12. IBIC analysis of CdTe/CdS solar cells

    CERN Document Server

    Colombo, E; Calusi, S; Giuntini, L; Giudice, A Lo; Manfredotti, C; Massi, M; Olivero, P; Romeo, A; Romeo, N; Vittone, E

    2016-01-01

    This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC) technique. The device under test is a thin film (total thickness around 10 um) multilayer heterojunction solar cell, displaying an efficiency of 14% under AM1.5 illumination conditions. The IBIC measurements were carried out using focused 3.150 MeV He ions raster scanned onto the surface of the back electrode. The charge collection efficiency (CCE) maps show inhomogeneous response of the cell to be attributed to the polycrystalline nature of the CdTe bulk material. Finally, the evolution of the IBIC signal vs. the ion fluence was studied in order to evaluate the radiation hardness of the CdS/CdTe solar cells in view of their use in solar modules for space applications.

  13. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Levi, D.H.; Matson, R.J. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization the authors were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  14. The role of oxygen in CdS/CdTe solar cells deposited by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Levi, D.H.; Matson, R.J.; Albin, D.S.; Dhere, R.G.; Sheldon, P. [National Renewable Energy Lab., Golden, CO (United States)

    1996-09-01

    The presence of oxygen during close-spaced sublimation (CSS) of CdTe has been previously reported to be essential for high-efficiency CdS/CdTe solar cells because it increases the acceptor density in the absorber. The authors find that the presence of oxygen during CSS increases the nucleation site density of CdTe, thus decreasing pinhole density and grain size. Photoluminescence showed that oxygen decreases material quality in the bulk of the CdTe film, but positively impacts the critical CdS/CdTe interface. Through device characterization they were unable to verify an increase in acceptor density with increased oxygen. These results, along with the achievement of high-efficiency cells (13% AM1.5) without the use of oxygen, led the authors to conclude that the use of oxygen during CSS deposition of CdTe can be useful but is not essential.

  15. Constructing Post-Permeation Method to Fabricate Polymer/Nanocrystals Hybrid Solar Cells with PCE Exceeding 6.

    Science.gov (United States)

    Du, Xiaohang; Zeng, Qingsen; Jin, Gan; Liu, Fangyuan; Ji, Tianjiao; Yue, Yuanyuan; Yang, Yi; Zhang, Hao; Yang, Bai

    2017-01-11

    A post-permeation method is constructed for fabricating bulk-heterojunction hybrid solar cells. Porous CdTe film is prepared by annealing the mixture solution of aqueous CdTe nanocrystals and cetyltrimethyl ammonium bromide, after which the post-permeation of polymer is employed. By this method, kinds of polymers can be applied regardless of the intermiscibility with the nanoparticles. The inorganic nanocrystals and the polymer can be treated under respective optimized annealing temperatures, which can facilitate the growth of nanocrystals without damaging the polymers. A high power conversion efficiency of 6.36% in the polymer/nanocrystals hybrid solar cells is obtained via systematical optimization.

  16. Effect of “CdCl2 Treatment” on Properties of CdTe-Based Solar Cells Prepared by Physical Vapor Deposition and Close-Spaced Sublimation Methods

    Science.gov (United States)

    Hajimammadov, Rashad; Fathi, Nasser; Bayramov, Ayaz; Khrypunov, Genady; Klochko, Nataliya; Li, Tatyana

    2011-05-01

    CdTe is regarded as one of the most promising materials for fabricating CdTe/CdS thin film solar cells with efficiencies up to 16.5%. In this paper we present a comparative analysis of CdTe-based solar cells fabricated by physical vapor deposition (PVD) and close-spaced sublimation (CSS) methods. The structural properties of CdTe base layers and the output parameters of CdS/CdTe solar cells are presented, and the influence of “CdCl2-treatment” on these properties are discussed. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses were used in the studies.

  17. Exploring Feasibility for Application of Luminescent CdTe Quantum Dots Prepared in Aqueous Phase to Live Cell Imaging

    Institute of Scientific and Technical Information of China (English)

    Ji Fang WENG; Xing Tao SONG; Liang LI; Hui Feng QIAN; Ke Ying CHEN; Xue Ming XU; Cheng Xi CAO; Ji Cun REN

    2006-01-01

    This paper explored the feasibility for the application of luminescent CdTe quantum dots prepared in aqueous phase to live cell imaging. The highly luminescent CdTe quantum dots (QDs)were first prepared in aqueous phase, and then were covalently coupled to a plant lectin (UEA-1),as a fluorescent probe. After incubating with of human umbilical vein endothelial cells (HUVECs), the QD probe with UEA-1 was able to specifically bind the corresponding cell receptor. The good cell images were obtained in live cells using laser confocal scanning microscopy. We predict that QDs prepared in water phase will probably become an attractive alternative probe in cellular imaging and bio-labeling.

  18. First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors

    Science.gov (United States)

    Kirk, Alexander P.; Kirk, Wiley P.

    2013-11-01

    Direct bandgap InP, GaAs, CdTe, and Ga0.5In0.5P solar cells containing backside mirrors as well as parasitically absorbing substrates are analyzed for their limiting open circuit voltage and power conversion efficiency with comparison to record solar cells. From the principle of detailed balance, it is shown quantitatively that mirror solar cells have greater voltage and power conversion efficiency than their substrate counterparts. Next, the radiative recombination coefficient and maximum radiative lifetime of GaAs mirror and substrate solar cells are calculated and compared to the nonradiative Auger and Shockley-Read-Hall (SRH) lifetimes. Mirror solar cells have greater radiative lifetime than their substrate variants. Auger lifetime exceeds radiative lifetime for both substrate and mirror cells while SRH lifetime may be less or greater than radiative lifetime depending on trap concentration and capture cross section. Finally, the change in free energy of the photogenerated carriers is analyzed in a comparison between InP, GaAs, CdTe, and Ga0.5In0.5P mirror and substrate solar cells in order to characterize the relationship between solar photon quality and free energy management in solar cells with differing bandgaps. Wider bandgap visible threshold Ga0.5In0.5P solar cells make better use of the available change in free energy of the photogenerated charge carriers, even when normalized to the bandgap energy, than narrower bandgap near-IR threshold InP, GaAs, and CdTe solar cells.

  19. Nanostructured Semiconductor Device Design in Solar Cells

    Science.gov (United States)

    Dang, Hongmei

    We demonstrate the use of embedded CdS nanowires in improving spectral transmission loss and the low mechanical and electrical robustness of planar CdS window layer and thus enhancing the quantum efficiency and the reliability of the CdS-CdTe solar cells. CdS nanowire window layer enables light transmission gain at 300nm-550nm. A nearly ideal spectral response of quantum efficiency at a wide spectrum range provides an evidence for improving light transmission in the window layer and enhancing absorption and carrier generation in absorber. Nanowire CdS/CdTe solar cells with Cu/graphite/silver paste as back contacts, on SnO2/ITO-soda lime glass substrates, yield the highest efficiency of 12% in nanostructured CdS-CdTe solar cells. Reliability is improved by approximately 3 times over the cells with the traditional planar CdS counterpart. Junction transport mechanisms are delineated for advancing the basic understanding of device physics at the interface. Our results prove the efficacy of this nanowire approach for enhancing the quantum efficiency and the reliability in windowabsorber type solar cells (CdS-CdTe, CdS-CIGS and CdS-CZTSSe etc) and other optoelectronic devices. We further introduce MoO3-x as a transparent, low barrier back contact. We design nanowire CdS-CdTe solar cells on flexible foils of metals in a superstrate device structure, which makes low-cost roll-to-roll manufacturing process feasible and greatly reduces the complexity of fabrication. The MoO3 layer reduces the valence band offset relative to the CdTe, and creates improved cell performance. Annealing as-deposited MoO3 in N 2 reduces series resistance from 9.98 O/cm2 to 7.72 O/cm2, and hence efficiency of the nanowire solar cell is improved from 9.9% to 11%, which efficiency comparable to efficiency of planar counterparts. When the nanowire solar cell is illuminated from MoO 3-x /Au side, it yields an efficiency of 8.7%. This reduction in efficiency is attributed to decrease in Jsc from 25.5m

  20. Rectenna solar cells

    CERN Document Server

    Moddel, Garret

    2013-01-01

    Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

  1. Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells

    CERN Document Server

    Mirkamali, Ashrafalsadat S

    2016-01-01

    In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open circuit voltage, fill factor and efficiency. Numerical simulation shows that the highest efficiency of single-junction CdS/CdTe solar cell equal to 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layer is 60 nm. Then, in order to obtain the maximal value of the efficiency, new tandem multi-junction structure consisting of layers of two solar cells connected with each other back to back are designed and engineered taking into account the results obtained for the single-junction solar cells. Numerical simulations show that its highest efficiency in 31.8% can be obtained when the thickness of CdS p-layer is equal to 50 nm, and the thickness of the CdS n-layer is equal to 200 nm, while thicknesses of the CdTe n-layer and CdTe p-layer are kept fixed and equal t...

  2. Study of copper-free back contacts to thin film cadmium telluride solar cells

    Science.gov (United States)

    Viswanathan, Vijay

    The goals of this project are to study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te 3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70--100°C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te 3 contact performance will also be studied as a function of the Sb 2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O 2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

  3. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. (University of South Florida, Tampa, FL (United States))

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  4. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75 percent or higher at 0.44 microns and a photovoltaic efficiency of 11.5 percent or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65 percent and a photovoltaic conversion efficiency of 5 percent and 8 percent, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD(1-x)Zn(1-x)Te, and Hg(1-x)Zn(x)Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400 C using TEGa and AsH3 as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized.

  5. Dye sensitized solar cells.

    Science.gov (United States)

    Wei, Di

    2010-03-16

    Dye sensitized solar cell (DSSC) is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO(2), ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

  6. Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Di Wei

    2010-03-01

    Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

  7. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  8. RF Sputtered ZnTe:N as CdS/CdTe Solar Cell Back-Contact Material

    Science.gov (United States)

    Ma, X.

    1999-04-01

    The most frequently used electrical contact to CdTe thin-film polycrystalline solar cells on glass involves the use of copper. However, Cu is known to be a fast diffuser in many semiconductors and is suspected of leading to some deterioration of performance of CdTe solar cells under extreme conditions. In this work we report on the development of a reactively sputtered ZnTe:N back contact on solar cells. Promising low-resistive nitrogen-doped ZnTe films were obtained. Efficiencies up to 10.8 percent were obtained for solar cells fabricated with a ZnTe:N/Au back contact scheme. Comparison of cell performances using ZnTe:N and Cu/Au back-contacts is presented.

  9. Solar cell radiation handbook

    Science.gov (United States)

    Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

    1982-01-01

    The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

  10. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  11. Can we improve the record efficiency of CdS/CdTe solar cells?

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [CINVESTAV del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D.F. (Mexico)

    2006-09-22

    Polycrystalline thin film CdTe continues to be a leading material for the development of cost effective and reliable photovoltaic systems. The two key properties of this material are its near ideal band gap for photovoltaic conversion efficiency of 1.45eV, and its high optical absorption coefficient. Thin film CdTe solar cells are typically hetero-junctions with CdS being the n-type partner, or window layer. Efficiencies as high as 16.5% have been achieved. In this paper we make a physical analysis of the typical CdS/CdTe superstrate solar cell, and we show that present record efficiencies are very close to the practical efficiency limit for a CdS/CdTe hetero-junction cell. We show that a current estimate for the maximum efficiency of hetero-junction CdS/CdTe solar cells is around 17.5%, in contrast to old theoretical predictions, which calculate about 30% efficiencies for ideal homo-junction CdTe solar cells. This analysis explains why the record efficiency for this kind of cells has been stable for the last 10 years, going up by less than 1% from 15.8% to only 16.5%. (author)

  12. Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells

    OpenAIRE

    Mirkamali, Ashrafalsadat S.; Muminov, Khikmat Kh.

    2016-01-01

    In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open circuit voltage, fill factor and efficiency. Numerical simulation shows that the highest efficiency of single-junction CdS/CdTe solar cell equal to 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layer is 60 nm. Then, in order to obtain th...

  13. Photovoltaic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2013-11-26

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  14. Photovoltaic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J

    2014-05-20

    A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electricity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

  15. Nanocrystal Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gur, Ilan [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  16. Recent advances in sensitized mesoscopic solar cells.

    Science.gov (United States)

    Grätzel, Michael

    2009-11-17

    -intensive high vacuum and materials purification steps that are currently employed in the fabrication of all other thin-film solar cells. Organic materials are abundantly available, so that the technology can be scaled up to the terawatt scale without running into feedstock supply problems. This gives organic-based solar cells an advantage over the two major competing thin-film photovoltaic devices, i.e., CdTe and CuIn(As)Se, which use highly toxic materials of low natural abundance. However, a drawback of the current embodiment of OPV cells is that their efficiency is significantly lower than that for single and multicrystalline silicon as well as CdTe and CuIn(As)Se cells. Also, polymer-based OPV cells are very sensitive to water and oxygen and, hence, need to be carefully sealed to avoid rapid degradation. The research discussed within the framework of this Account aims at identifying and providing solutions to the efficiency problems that the OPV field is still facing. The discussion focuses on mesoscopic solar cells, in particular, dye-sensitized solar cells (DSCs), which have been developed in our laboratory and remain the focus of our investigations. The efficiency problem is being tackled using molecular science and nanotechnology. The sensitizer constitutes the heart of the DSC, using sunlight to pump electrons from a lower to a higher energy level, generating in this fashion an electric potential difference, which can exploited to produce electric work. Currently, there is a quest for sensitizers that achieve effective harnessing of the red and near-IR part of sunlight, converting these photons to electricity better than the currently used generation of dyes. Progress in this area has been significant over the past few years, resulting in a boost in the conversion efficiency of the DSC that will be reviewed.

  17. The study of properties of CdTe thin films deposited in Ar/O{{2}} atmosphere

    Science.gov (United States)

    Li, Y.; Li, B.; Feng, L.; Zheng, J.; Li, W.

    2009-02-01

    The preparation and properties of CdTe thin films is of a primary interest for the CdTe thin film solar cells in both research and technology. In our work, polycrystalline CdTe thin films were deposited on pretreated glass substrates in Ar/O{2} atmosphere by closed-space sublimation (CSS) technology. Structural property was studied by X-ray diffraction (XRD), surface morphology was observed by scanning electron microscopy (SEM). The optical and electrical properties of CdTe films were investigated, as well as the effects of deposition temperatures, the ratio of gas (Ar/O{2}) and post-treatment on the properties. The high quality CdTe layer was prepared based on the above studies. These layers were used to prepared CdS/CdTe/ZnTe:Cu solar cells. Efficiency of 13.38% and fill factor of 70.3% (0.501 cm2 area) for CdTe solar cells have been achieved. Project supported by the National High Technology Research and Development Program of China (Grant No.2003AA513010) and the National Natural Science Foundation of China (Grant No.60506004).

  18. Welded solar cell interconnection

    Science.gov (United States)

    Stofel, E. J.; Browne, E. R.; Meese, R. A.; Vendura, G. J.

    1982-01-01

    The efficiency of the welding of solar-cell interconnects is compared with the efficiency of soldering such interconnects, and the cases in which welding may be superior are examined. Emphasis is placed on ultrasonic welding; attention is given to the solar-cell welding machine, the application of the welding process to different solar-cell configurations, producibility, and long-life performance of welded interconnects. Much of the present work has been directed toward providing increased confidence in the reliability of welding using conditions approximating those that would occur with large-scale array production. It is concluded that there is as yet insufficient data to determine which of three methods (soldering, parallel gap welding, and ultrasonic welding) provides the longest-duration solar panel life.

  19. Device analysis methods for physical cell parameters of CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Baetzner, D.L. [Eidgenoessische Technische Hochschule, Zurich (Switzerland). Inst. fuer Quantenelektronik; Oezsan, M.E. [BP Solar Technology Centre, Sunbury-on-Thames, Middlesex (United Kingdom); Bonnet, D. [ANTEC Angewandte Neue Technologien GmbH, Kelkheim (Germany); Buecher, K. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany). Abt. Thermische und Optische Systeme

    2000-02-21

    CdTe/CdS solar cells are thin film solar cells made of several different materials. As front contact serves a TCO, the p-n junction is an intermixed CdS/CdTe heterojunction and the metallization on the CdTe layer, which is needed for the back contact, usually shows a Schottky diode behaviour. Therefore the optoelectrical properties of the cells are complex and can often not be explained straight forward like in silicon solar cells. In order to determine the physical cell parameters like the Schottky barrier height and the minority carrier diffusion length in the absorber layer, we investigated the temperature dependence of the dark I-V characteristics and the spectral response. By modelling the temperature and wavelength dependence of the cell parameters, physical quantities such as the barrier height of the Schottky contact can be determined. (orig.)

  20. A comparative study of CdTe quantum dots and CdTe@SiO2 nanoparticles: fabrication and cytotoxicity in HEK293 cells.

    Science.gov (United States)

    Sadaf, Asma; Zeshan, Basit; Wang, Zhuyuan; Zhang, Ruohu; Xu, Shuhong; Wang, Chunlei; Yang, Jing; Cui, Yiping

    2012-09-01

    Quantum Dots have shown remarkable potentials in biomedical research. Herein, we reported the effects of CdTe quantum dots (QDs) and CdTe@SiO2 nanoparticles (NPs) on human embryonic kidney 293 (HEK 293A) cells with the aim of investigating their in vitro cytotoxicity. The CdTe@SiO2 particles were prepared by reverse microemulsion method. The structural morphology of the CdTe and hydrophilic silica-coated CdTe particles were characterized by transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) spectrometry and photoluminescence (PL) spectrometry. The in vitro cytotoxicity of CdTe QDs and CdTe@SiO2 nanoparticles was assessed in 293A cells using standard MTT assay, western blot and fluorescent microscopy. The results showed that the CdTe and CdTe@SiO2 particles were relatively uniform with the diameter of about 3.8 nm, 75 nm respectively. The cell viability and the adhesion ability were similar to the control 293A cells. The level of the fibronectin protein expression was decreased with the increasing concentration of CdTe while the no effects were observed on expression of beta-actin in CdTe as well as CdTe@SiO2 treated cells even at highest concentration of 45 microg/mL which demonstrated their good biocompatibility to 293A cells. The results indicate that the CdTe@SiO2 nanoparticles are attractive candidates for biological imaging studies as expected.

  1. Influence of solar spectrum and climate on the performance of c-SI, a-Si and CdTe modules

    Science.gov (United States)

    Weihs, Philipp; Jochen, Wagner; Marcus, Rennhofer; Zamini, Shokufeh; Fallent, Gerhard; Brence, Florian

    2010-05-01

    Within the scope of the project PV-SPEC we investigate the performance of different types of photovoltaic (PV) modules as a function of the regional climate of Austria. Three types of modules were chosen for the present study: monocrystalline silicon cells (c-SI), amorphous silicon cells (a-Si) and cadmium telluride cells (CdTe). The criteria for the selection of the cells is on the one hand their different spectral sensitivity and on the other hand the need of research in the domain of thin film technology. The aim of the project is the exact estimation of the potential energy yield of these three module types in the different climatic regions of Austria. Thereby the effects of the very inhomogeneous and structured topography in Austria need to be fully taken into account. As a first step the characteristics of the PV modules as well as their spectral sensitivity were determined in the laboratory. In a second step routine measurements of the module performance were performed at Observatory Kanzelhoehe (1600 m altitude), and in Vienna (170 m altitude). In order to investigate the influence of temperature, wind, cloudiness and solar spectrum some additional measurements of these quantities were performed. In order to investigate the influence of the orientation of the modules, we performed for each module type the measurement of the performance of three modules with different orientations: one module oriented towards south, one towards east and one towards west. In a third step we then analyse the performance as a function of time of the day, as a function of the season, as a function of the meteorological parameters (temperature, wind and cloudiness) and as a function of the spectral distribution of the solar radiation. The meteorological influence on the PV module performance is quantified using one array type function for each module type. Using this function and a radiative transfer model we may in a last step calculate the energy yield potential of the three PV

  2. Thin film CdS/CdTe solar cells: Research perspectives

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [CINVESTAV del IPN, Department of Electrical Engineering, Avenida IPN No. 2508, 07360 Mexico DF (Mexico)

    2006-06-15

    Polycrystalline thin film CdTe continues to be a leading material for the development of cost effective and reliable photovoltaics. The two key properties of this material are its band gap (1.5eV), close to the ideal for photovoltaic conversion efficiency (1.45eV), and its high optical absorption coefficient. Thin film CdTe solar cells are typically hetero-junctions with CdS being the n-type partner, or window layer. Efficiencies as high as 16.5% have been achieved, but still there is some potential for increasing them. We make an analysis of the typical CdS/CdTe superstrate solar cell, and from it we establish critical issues and different lines of research in order to improve the current efficiencies. We also show that present record efficiencies are very close to the practical efficiency limit for a CdS/CdTe hetero-junction cell. (author)

  3. Recent technical advances in thin-film CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Omura, K.; Hanahusa, A.; Arita, T.; Higuchi, H.; Aramoto, T.; Nishio, T.; Sibutani, S.; Kumazawa, S.; Murozono, M. [Matsushita Battery Industrial Co., Ltd., Osaka (Japan). PV Research and Development Center; Yabuuchi, Y. [Matsushita Technoresearch Inc., Osaka (Japan); Takakura, H. [Toyama Prefectural University, Toyama (Japan)

    1996-05-01

    CeS/CdTe solar cells have attracted attention recently for their potential as low-cost, high-efficiency solar cells of the future. It is because the CdTe layer (used for photoelectric conversion) has a bandgap energy of 1.51 eV, which corresponds well to sunlight spectra, and the direct transition type energy band structure enables formation of thinner films. We have already industrialized CdS/CdTe solar cells in mass production stage using a printing-sintering process, as large-area modules for electric power generation (Higuchi et al., 1993, Omura et al., 1991), and as cells for indoor applications (primarily in calculators, Suyama et al., 1986). However, this solar cell has a conversion efficiency of approximately 6%. Recently, there has been considerable research into thin-film CdS/CdTe solar cells which have a thinner CdS film formed by CVD or CBD (Britt et al., 1993) process, and thus are photosensitive to light with wavelengths of 500 nm or less. At present stage of our art, in solar cells formed by the CSS with a CdTe film on CVD CdS, a conversion efficiency of 15.05% has been obtained in cells with an area of 1 cm{sup 2}(verified at JQA). (author)

  4. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Annual report, 1 February 1983-31 January 1984

    Energy Technology Data Exchange (ETDEWEB)

    Bube, R; Fahrenbruch, A; Huber, W; Fortmann, C; Thorpe, T

    1984-09-01

    Variation of CdS/CdTe/graphite thick film solar cell properties was investigated as a function of temperature for CdS film deposition. A maximum open-circuit voltage of 0.67 V was found for a deposition temperature of 160/sup 0/C, corresponding to a CdS film resistivity of 150 ohm-cm. The effect is not due to avoidance of higher temperature annealing of the CdTe film in higher temperature CdS film depositions nor to the diffusion of In from the outermost CdS: In layer. The effect of coating the graphite before CdTe deposition with Au or Cu was also investigated. Although high concentrations of both Au or Cu could be determined after CdTe deposition, CdTe films grown on this coated graphite had lower hole densities than films grown on uncoated graphite. Photovoltaic parameters of thin-film CdS/CdTe/graphite solar cells were investigated as a function of storage time to check the stability of these cells. Initial degradation of parameters (especially fill factor) could be reversed by heat treatment in hydrogen, with subsequent properties being stable. Heat treatment of CdS/CdTe/graphite solar cells in air increases cell resistivity and decreases fill factor; heat treatment in hydrogen produces the reverse effect. The hole density is not affected by these heat treatments, suggesting that effects are associated with grain boundaries in the film.

  5. Characterization of CdS/CdTe thin-film solar cells by admittance spectroscopy and deep-level transient spectroscopy

    Science.gov (United States)

    Isett, L. C.

    1984-12-01

    Mitchell (1982) and Tyan (1980) have described several thin-film CdTe solar-cell configurations. Power conversion efficiencies greater than 8 percent were demonstrated. It is pointed out that for a clearer understanding of the solar cell, a determination of the electronic character of semiconductor imperfection states is required in addition to measurement of solar-cell parameters (efficiency, short-circuit current, open-circuit voltage). The present investigation is concerned with the analysis of CdS/CdTe thin-film solar cells prepared by close-spaced sublimation (CSS), taking into account the employment of deep-level transient spectroscopy (DLTS) and admittance spectroscopy. The analysis provides information on both the structure of the CdS/CdTe solar cell and the deep-level impurities in CdTe. Deep-level impurities in the p-CdTe layer are discussed.

  6. Synthesis of AS1411-aptamer-conjugated CdTe quantum dots with high fluorescence strength for probe labeling tumor cells.

    Science.gov (United States)

    Alibolandi, Mona; Abnous, Khalil; Ramezani, Mohammad; Hosseinkhani, Hossein; Hadizadeh, Farzin

    2014-09-01

    In this paper, we report microwave-assisted, one-stage synthesis of high-quality functionalized water-soluble cadmium telluride (CdTe) quantum dots (QDs). By selecting sodium tellurite as the Te source, cadmium chloride as the Cd source, mercaptosuccinic acid (MSA) as the capping agent, and a borate-acetic acid buffer solution with a pH range of 5-8, CdTe nanocrystals with four colors (blue to orange) were conveniently prepared at 100 °C under microwave irradiation in less than one hour (reaction time: 10-60 min). The influence of parameters such as the pH, Cd:Te molar ratio, and reaction time on the emission range and quantum yield percentage (QY%) was investigated. The structures and compositions of the prepared CdTe QDs were characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, selective area electron diffraction, and X-ray powder diffraction experiments. The formation mechanism of the QDs is discussed in this paper. Furthermore, AS1141-aptamer-conjugated CdTe QDs in the U87MG glioblastoma cell line were assessed with a fluorescence microscope. The obtained results showed that the best conditions for obtaining a high QY of approximately 87% are a pH of 6, a Cd:Te molar ratio of 5:1, and a 30-min reaction time at 100 °C under microwave irradiation. The results showed that AS1141-aptamer-conjugated CdTe QDs could enter tumor cells efficiently. It could be concluded that a facile high-fluorescence-strength QD conjugated with a DNA aptamer, AS1411, which can recognize the extracellular matrix protein nucleolin, can specifically target U87MG human glioblastoma cells. The qualified AS1411-aptamer-conjugated QDs prepared in this study showed excellent capabilities as nanoprobes for cancer targeting and molecular imaging.

  7. Spectroscopy of low energy solar neutrinos using CdTe detectors

    Science.gov (United States)

    Zuber, K.

    2003-10-01

    The usage of a large amount of CdTe(CdZnTe) semiconductor detectors for solar neutrino spectroscopy in the low energy region is investigated. Several different coincidence signals can be formed on five different isotopes to measure the 7Be neutrino line at 862 keV in real-time. The most promising one is the usage of 116Cd resulting in 227 SNU. The presence of 125Te permits even the real-time detection of pp-neutrinos. A possible antineutrino flux above 713 keV might be detected by capture on 106Cd.

  8. Development of Combinatorial Pulsed Laser Deposition for Expedited Device Optimization in CdTe/CdS Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Ali Kadhim

    2016-01-01

    Full Text Available A combinatorial pulsed laser deposition system was developed by integrating a computer controlled scanning sample stage in order to rapidly screen processing conditions relevant to CdTe/CdS thin-film solar cells. Using this system, the thickness of the CdTe absorber layer is varied across a single sample from 1.5 μm to 0.75 μm. The effects of thickness on CdTe grain morphology, crystal orientation, and cell efficiency were investigated with respect to different postprocessing conditions. It is shown that the thinner CdTe layer of 0.75 μm obtained the best power conversion efficiency up to 5.3%. The results of this work shows the importance that CdTe grain size/morphology relative to CdTe thickness has on device performance and quantitatively exhibits what those values should be to obtain efficient thin-film CdTe/CdS solar cells fabricated with pulsed laser deposition. Further development of this combinatorial approach could enable high-throughput exploration and optimization of CdTe/CdS solar cells.

  9. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J U; Mao, D [Colorado School of Mines, Golden, CO (United States)

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  10. Optoelectronics of solar cells

    CERN Document Server

    Smestad, Greg P

    2002-01-01

    With concerns about worldwide environmental security, global warming, and climate change due to emissions of carbon dioxide from the burning of fossil fuels, it is desirable to have a wide range of energy technologies in a nation's portfolio. Photovoltaics, or solar cells, are a viable option as a nonpolluting renewable energy source. This text is designed to be an overview of photovoltaic solar cells for those in the fields of optics and optical engineering, as well as those who are interested in energy policy, economics, and the requirements for efficient photo-to-electric energy conversion.

  11. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Electrical and Communications Engineering

    1998-10-01

    Photovoltaic research in the Electron Physics Laboratory started in 1993, when laboratory joined the national TEKES/NEMO 2 research program. Since the beginning of the project, characterization as well as experimentally orientated development of the fabrication process of the solar cells were carried out parallery. The process development research started by the initiatives of the Finnish industry. At the moment a large amount of the laboratory personnel works on solar cell research and the financing comes mainly from external projects. The funding for the research has come from TEKES, Ministry of Education, Finnish Academy, GETA graduate school, special equipment grants of the university, and from the laboratory

  12. Cytotoxicity of CdTe quantum dots in human umbilical vein endothelial cells: the involvement of cellular uptake and induction of pro-apoptotic endoplasmic reticulum stress.

    Science.gov (United States)

    Yan, Ming; Zhang, Yun; Qin, Haiyan; Liu, Kezhou; Guo, Miao; Ge, Yakun; Xu, Mingen; Sun, Yonghong; Zheng, Xiaoxiang

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) have been proposed to induce oxidative stress, which plays a crucial role in CdTe QDs-mediated mitochondrial-dependent apoptosis in human umbilical vein endothelial cells (HUVECs). However, the direct interactions of CdTe QDs with HUVECs and their potential impairment of other organelles like endoplasmic reticulum (ER) in HUVECs are poorly understood. In this study, we reported that the negatively charged CdTe QDs (-21.63±0.91 mV), with good dispersity and fluorescence stability, were rapidly internalized via endocytosis by HUVECs, as the notable internalization could be inhibited up to 95.52% by energy depletion (NaN3/deoxyglucose or low temperature). The endocytosis inhibitors (methyl-β-cyclodextrin, genistein, sucrose, chlorpromazine, and colchicine) dramatically decreased the uptake of CdTe QDs by HUVECs, suggesting that both caveolae/raft- and clathrin-mediated endocytosis were involved in the endothelial uptake of CdTe QDs. Using immunocytochemistry, a striking overlap of the internalized CdTe QDs and ER marker was observed, which indicates that QDs may be transported to ER. The CdTe QDs also caused remarkable ER stress responses in HUVECs, confirmed by significant dilatation of ER cisternae, upregulation of ER stress markers GRP78/GRP94, and activation of protein kinase RNA-like ER kinase-eIF2α-activating transcription factor 4 pathway (including phosphorylation of both protein kinase RNA-like ER kinase and eIF2α and elevated level of activating transcription factor 4). CdTe QDs further promoted an increased C/EBP homologous protein expression, phosphorylation of c-JUN NH2-terminal kinase, and cleavage of ER-resident caspase-4, while the specific inhibitor (SP600125, Z-LEVD-fmk, or salubrinal) significantly attenuated QDs-triggered apoptosis, indicating that all three ER stress-mediated apoptosis pathways were activated and the direct participation of ER in the CdTe QDs-caused apoptotic cell death in HUVECs. Our

  13. Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C.-S.; Gessert, T. A.; Duda, A. M.; Young, M.; Metzger, W. K.; Li, X.; Al-Jassim, M. M.

    2006-05-01

    We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

  14. Solar Cells Based on Low-dimensional Nanocomposite Structures

    Directory of Open Access Journals (Sweden)

    S.L. Khrypko

    2016-12-01

    Full Text Available Converting solar energy into electric energy with using of solar batteries is a major task for developers and research teams. In this article we will look at the development of different generations of solar batteries for to create a nanocomposite structure. Production of solar batteries has gone through some steps, taking into account technological and economic aspects that have been associated with improved of their parameters. Thus the first generations of solar batteries have been based on the single-crystal silicon substrates (с-Si. The use of polycrystalline silicon and multi- crystalline allowed lower costs of modules, but due to the efficiency of solar energy conversion. The solar batteries of the second generation were based on thin-film technology, in which use different materials: silicon films based on amorphous silicon (a-Si, a film based on cadmium telluride (CdTe and film selenide copper-indium-gallium (CuInGaSe2, or CIGS. The use of such technology has allowed increasing the coefficient of performance (COP solar cell with a significant reduction in costs. The solar batteries of third-generation based on nanotechnology, nanocrystals and nano-sized clusters of semiconductors. The creation of such solar cells requires availability of a low-dimensional composite structure. Low-dimensional nanocomposite structures that are constructed on quantum dots and nano-porous materials have new modified optoelectronic properties. They can be used in solar elements, where absorption bands can be optimally adapted to the wavelength of radiation light. These structures could theoretically can lead to increased efficiency of solar energy conversion more than 65%, which can double practically current efficiency of solar batteries.

  15. Controlled cadmium telluride thin films for solar cell applications. Second quarterly report, September 1-December 1, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Das, M. B.; Krishnaswamy, S. V.

    1981-01-01

    A thermal annealing procedure to improve the photovoltaic and other electrical characteristics of CdTe sputtered films doped with In is described. For an understanding of the characteristics of these films, SEM, Auger electron spectroscopy and scanning ellipsometry analyses have been carried out. Dark and illuminated I/V characteristics and capacitance and conductance vs. frequency behavior of In doped CdTe Schottky barrier diodes based on Cr and Ni substrates indicate that thermal annealing is an effective means of reducing the trap concentrations on these films that can lead to a significant improvement of the quality of sputtered films for solar cell applications.

  16. Efficiency enhancement calculations of state-of-the-art solar cells by luminescent layers with spectral shifting, quantum cutting, and quantum tripling function

    NARCIS (Netherlands)

    Ten Kate, O.M.; De Jong, M.; Hintzen, H.T.; Van der Kolk, E.

    2013-01-01

    Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge

  17. Solar Cell Nanotechnology Final Technical Report

    Energy Technology Data Exchange (ETDEWEB)

    Das, Biswajit [Univ. of Nevada, Las Vegas, NV (United States)

    2014-05-07

    The objective of this project is to develop a low cost nonlithographic nanofabrication technology for the fabrication of thin film porous templates as well as uniform arrays of semiconductor nanostructures for the implementation of high efficiency solar cells. Solar cells based on semiconductor nanostructures are expected to have very high energy conversion efficiencies due to the increased absorption coefficients of semiconductor nanostructures. In addition, the thin film porous template can be used for optimum surface texturing of solar cells leading to additional enhancement in energy conversion efficiency. An important requirement for these applications is the ability to synthesize nanostructure arrays of different dimensions with good size control. This project employed nanoporous alumina templates created by the anodization of aluminum thin films deposited on glass substrates for the fabrication of the nanostructures and optimized the process parameters to obtain uniform pore diameters. An additional requirement is uniformity or regularity of the nanostructure arrays. While constant current anodization was observed to provide controlled pore diameters, constant voltage anodization was needed for regularity of the nanostructure arrays. Thus a two-step anodization process was investigated and developed in this project for improving the pore size distribution and pore periodicity of the nanoporous alumina templates. CdTe was selected to be the active material for the nanowires, and the process for the successful synthesis of CdTe nanowires was developed in this project. Two different synthesis approaches were investigated in this project, electrochemical and electrophoretic deposition. While electrochemical synthesis was successfully employed for the synthesis of nanowires inside the pores of the alumina templates, the technique was determined to be non-optimum due to the need of elevated temperature that is detrimental to the structural integrity of the

  18. High-efficiency cadmium and zinc-telluride-based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  19. Construção e caracterização de células solares de filmes finos de CdS e CdTe

    OpenAIRE

    Morales Morales, Oswaldo [UNESP

    2012-01-01

    Neste trabalho, o objeto de estudo foi células Solares CdS/CdTe. Estas células usam o filme de sulfeto de cádmio (CdS) como semicondutor do tipo n e o filme de telureto de cádmio (CdTe) como semicondutor do tipo p. O recorde mundial, alcançado no laboratório, para estas células é 16,5% de eficiência. Nos Laboratórios do Departamento de Física e Química de Unesp - Ilha Solteira, este trabalho é pioneiro na fabricação de Células Solares de CdS/CdTe. Para realizar este trabalho foi necessário me...

  20. Nanoimprinted polymer solar cell.

    Science.gov (United States)

    Yang, Yi; Mielczarek, Kamil; Aryal, Mukti; Zakhidov, Anvar; Hu, Walter

    2012-04-24

    Among the various organic photovoltaic devices, the conjugated polymer/fullerene approach has drawn the most research interest. The performance of these types of solar cells is greatly determined by the nanoscale morphology of the two components (donor/acceptor) and the molecular orientation/crystallinity in the photoactive layer. A vertically bicontinuous and interdigitized heterojunction between donor and acceptor has been regarded as one of the ideal structures to enable both efficient charge separation and transport. Synergistic control of polymer orientation in the nanostructured heterojunction is also critical to improve the performance of polymer solar cells. Nanoimprint lithography has emerged as a new approach to simultaneously control both the heterojunction morphology and polymer chains in organic photovoltaics. Currently, in the area of nanoimprinted polymer solar cells, much progress has been achieved in the fabrication of nanostructured morphology, control of molecular orientation/crystallinity, deposition of acceptor materials, patterned electrodes, understanding of structure-property correlations, and device performance. This review article summarizes the recent studies on nanoimprinted polymer solar cells and discusses the outstanding challenges and opportunities for future work.

  1. NASA Facts, Solar Cells.

    Science.gov (United States)

    National Aeronautics and Space Administration, Washington, DC.

    The design and function of solar cells as a source of electrical power for unmanned space vehicles is described in this pamphlet written for high school physical science students. The pamphlet is one of the NASA Facts Science Series (each of which consists of four pages) and is designed to fit in the standard size three-ring notebook. Review…

  2. Thin, Lightweight Solar Cell

    Science.gov (United States)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  3. Degradation of CIGS solar cells

    NARCIS (Netherlands)

    Theelen, M.J.

    2015-01-01

    Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a combinatio

  4. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  5. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  6. Characterization of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology (Finland). Dept. of Electrical and Communications Engineering

    1998-12-31

    Photovoltaic research began at the Electron Physics Laboratory of the Helsinki University of Tehnology in 1993, when the laboratory joined the national NEMO 2 research program. During the early stages of the photovoltaic research the main objective was to establish necessary measurement and characterisation routines, as well as to develop the fabrication process. The fabrication process development work has been supported by characterisation and theoretical modelling of the solar cells. Theoretical investigations have been concerned with systematic studies of solar cell parameters, such as diffusion lengths, surface recombination velocities and junction depths. The main result of the modelling and characterisation work is a method which is based on a Laplace transform of the so-called spatial collection efficiency function of the cell. The basic objective of the research has been to develop a fabrication process cheap enough to be suitable for commercial production

  7. Role of the copper-oxygen defect in cadmium telluride solar cells

    Science.gov (United States)

    Corwine, Caroline R.

    Thin-film CdTe is one of the leading materials used in photovoltaic (PV) solar cells. One way to improve device performance and stability is through understanding how various device processing steps alter defect states in the CdTe layer. Photoluminescence (PL) studies can be used to examine radiative defects in materials. This study uses low-temperature PL to probe the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdTe was reproduced in single-crystal (sX) CdTe by systematic incorporation of known impurities in the thin-film growth process, hence demonstrating that both copper and oxygen were necessary for its formation. Polycrystalline (pX) thin-film glass/SnO2:F/CdS/CdTe structures were examined. The CdTe layer was grown via close-spaced sublimation (CSS), vapor transport deposition (VTD), and physical vapor deposition (PVD). After CdTe deposition, followed by a standard CdC12 treatment and a ZnTe:Cu back contact, a PL peak was seen at ˜1.46 eV from the free back surface of all samples (1.456 eV for CSS and PVD, 1.460-1.463 eV for VTD). However, before the Cu-containing contact was added, this peak was not seen from the front of the CdTe (the CdS/CdTe junction region) in any device with CdTe thickness greater than 4 mum. The CdCl2 treatment commonly used to increase CdTe grain size did not enhance or reduce the peak at ˜1.46 eV relative to the rest of the PL spectrum. When the Cu-containing contact was applied, the PL spectra from both the front and back of the CdTe exhibited the peak at 1.456 eV. The PL peak at ˜1.46 eV was present in thin-film CdTe after deposition, when the dominant impurities are expected to be both Cu from the CdTe source material and O introduced in the chamber during growth to assist in CdTe film density. Since Cu and/or O appeared to be involved in this defect, PL studies were done with sX CdTe to distinguish between the separate effects of Cu or O and the combined effect of Cu and O

  8. Parallel comparative studies on the toxic effects of unmodified CdTe quantum dots, gold nanoparticles, and carbon nanodots on live cells as well as green gram sprouts.

    Science.gov (United States)

    Song, Yanchao; Feng, Duan; Shi, Wen; Li, Xiaohua; Ma, Huimin

    2013-11-15

    By using confocal fluorescence microscopy and direct visualization, a parallel comparative investigation has been systematically made on the relative toxicity of three common nanomaterials, such as unmodified CdTe quantum dots (QDs), Au nanoparticles (Au NPs) and carbon nanodots (C-dots), to live cells as well as green gram sprouts. Bare CdTe QDs exert the most toxic effect on a variety of cell lines (HeLa, MCF-7, NIH/3T3 cells) as well as live plants (green gram sprouts). For cells, this toxic effect leads to the partial death of cells, the decrease of cell metabolic activity, the shrinkage of cells, the breakage of chromatin, the damage of cell membrane integrity, and the fragmentation of mitochondria; for green gram sprouts, the presence of CdTe QDs markedly inhibits their growth. Moreover, the toxic behaviors of CdTe QDs are dose- and time-dependent. Under the same conditions, Au NPs only decrease the metabolic activity of cells to a small extent, and do not affect the appearance of cellular/subcellular structures and the plant growth; interestingly, C-dots exert no obvious toxicity to both live cells and the growth of green gram sprouts, showing good biocompatibility. These parallel comparative studies clearly reveal that the relative toxicity of the three nanomaterials in their native forms is bare CdTe QDs>Au NPs>C-dots, whose IC50 values for normal NIH/3T3 cells are 0.98 μg/mL, 62 μg/mL, and >250 μg/mL, respectively. This quantitative information is of great importance for right choice of the nanomaterials in their practical applications.

  9. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    Science.gov (United States)

    Williams, B. L.; Taylor, A. A.; Mendis, B. G.; Phillips, L.; Bowen, L.; Major, J. D.; Durose, K.

    2014-02-01

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕB = 0.52 eV) and low shunt resistances (RSH < 500 Ω.cm2).

  10. EDITORIAL: Nanostructured solar cells Nanostructured solar cells

    Science.gov (United States)

    Greenham, Neil C.; Grätzel, Michael

    2008-10-01

    Conversion into electrical power of even a small fraction of the solar radiation incident on the Earth's surface has the potential to satisfy the world's energy demands without generating CO2 emissions. Current photovoltaic technology is not yet fulfilling this promise, largely due to the high cost of the electricity produced. Although the challenges of storage and distribution should not be underestimated, a major bottleneck lies in the photovoltaic devices themselves. Improving efficiency is part of the solution, but diminishing returns in that area mean that reducing the manufacturing cost is absolutely vital, whilst still retaining good efficiencies and device lifetimes. Solution-processible materials, e.g. organic molecules, conjugated polymers and semiconductor nanoparticles, offer new routes to the low-cost production of solar cells. The challenge here is that absorbing light in an organic material produces a coulombically bound exciton that requires dissociation at a donor-acceptor heterojunction. A thickness of at least 100 nm is required to absorb the incident light, but excitons only diffuse a few nanometres before decaying. The problem is therefore intrinsically at the nano-scale: we need composite devices with a large area of internal donor-acceptor interface, but where each carrier has a pathway to the respective electrode. Dye-sensitized and bulk heterojunction cells have nanostructures which approach this challenge in different ways, and leading research in this area is described in many of the articles in this special issue. This issue is not restricted to organic or dye-sensitized photovoltaics, since nanotechnology can also play an important role in devices based on more conventional inorganic materials. In these materials, the electronic properties can be controlled, tuned and in some cases completely changed by nanoscale confinement. Also, the techniques of nanoscience are the natural ones for investigating the localized states, particularly at

  11. Quantum Dot Solar Cells

    Science.gov (United States)

    Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.

    2002-01-01

    We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.

  12. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  13. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  14. Space solar cells - tradeoff analysis

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, M.R. [ISRO Satellite Centre, Bangalore (India). Power Systems Group

    2003-05-15

    This paper summarizes the study that had the objective to tradeoff space solar cells and solar array designs to determine the best choice of solar cell and array technology that would be more beneficial in terms of mass, area and cost for different types of space missions. Space solar cells, which are commercially now available in the market and to be available in the near future, were considered for this trade study. Four solar array designs: rigid, flexible, thin film flexible and concentrator solar arrays were considered for assessment. Performance of the solar cells along with solar array designs were studied for two types of space missions:geo synchronous orbit (GEO) and low earth orbit (LEO) spacecraft. The Solar array designs assumed were to provide 15 kW power for 15 years mission life in GEO and 5 kW power for 5 years mission life in LEO altitudes. To perform tradeoff analysis a spread sheet model was developed that calculates the size, mass and estimates the cost of solar arrays based on different solar cell and array technologies for given set of mission requirements. Comparative performance metrics (W/kg, W/m{sup 2}, kg/m{sup 2}, and $/W) were calculated for all solar arrays studied and compared, at the solar array subsystem level and also at the spacecraft system level. The trade analysis results show that high-efficiency multijunction solar cells bring lot of cost advantages for both types of missions. The trade study also shows that thin film solar cells with moderate efficiency with ultra lightweight flexible array design may become competitive with well-established single crystalline solar cell technologies in the future. (author)

  15. Space solar cells. Tradeoff analysis

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, M. Raja [Power Systems Group, Solar Panels Division, ISRO Satellite Centre, Bangalore 560017 (India)

    2003-05-15

    This paper summarizes the study that had the objective to tradeoff space solar cells and solar array designs to determine the best choice of solar cell and array technology that would be more beneficial in terms of mass, area and cost for different types of space missions. Space solar cells, which are commercially now available in the market and to be available in the near future, were considered for this trade study. Four solar array designs: rigid, flexible, thin film flexible and concentrator solar arrays were considered for assessment. Performance of the solar cells along with solar array designs were studied for two types of space missions: geo synchronous orbit (GEO) and low earth orbit (LEO) spacecraft. The Solar array designs assumed were to provide 15kW power for 15 years mission life in GEO and 5kW power for 5 years mission life in LEO altitudes. To perform tradeoff analysis a spread sheet model was developed that calculates the size, mass and estimates the cost of solar arrays based on different solar cell and array technologies for given set of mission requirements. Comparative performance metrics (W/kg, W/m{sup 2}, kg/m{sup 2}, and $/W) were calculated for all solar arrays studied and compared, at the solar array subsystem level and also at the spacecraft system level. The trade analysis results show that high-efficiency multijunction solar cells bring lot of cost advantages for both types of missions. The trade study also show that thin film solar cells with moderate efficiency with ultra lightweight flexible array design may become competitive with well-established single crystalline solar cell technologies in the future.

  16. Novel CdTe Cell Fabrication Process with Potential for Low Cost and High Throughput

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Sheldon, P.

    2000-01-01

    There are several production disadvantages inherent in the conventional SnO(2)/CdS/CdTe manufacturing processes. In this paper, we report a novel manufacturing process for fabrication of polycrystalline Cd(2)SnO(4)/Zn(2)/SnO(4)/CdS/CdTe thin-film solar cells that yielded a CdS/CdTe device with an NREL-confirmed efficiency of 14.0%.

  17. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  18. Development of Combinatorial Pulsed Laser Deposition for Expedited Device Optimization in CdTe/CdS Thin-Film Solar Cells

    OpenAIRE

    Ali Kadhim; Paul Harrison; Jake Meeth; Alaa Al-Mebir; Guanggen Zeng; Judy Wu

    2016-01-01

    A combinatorial pulsed laser deposition system was developed by integrating a computer controlled scanning sample stage in order to rapidly screen processing conditions relevant to CdTe/CdS thin-film solar cells. Using this system, the thickness of the CdTe absorber layer is varied across a single sample from 1.5 μm to 0.75 μm. The effects of thickness on CdTe grain morphology, crystal orientation, and cell efficiency were investigated with respect to different postprocessing conditions. It i...

  19. Influence of Deposition Conditions on Properties of All Sputtered CdS/CdTe Thin-Film Solar Cells.

    Science.gov (United States)

    Kim, Minha; Kim, Doyoung; Shim, Joong-Pyo; Kim, Donguk; Lee, Jaehyeong

    2016-05-01

    The effects of deposition conditions, such as substrate temperature and CdCl2 post treatments, on the structural and optical properties of CdTe films were investigated. In addition, CdS/CdTe thin-film solar cells were fabricated by an all-sputtering process, and their photovoltaic characteristics were studied. The CdTe films had a polycrystalline, cubic structure with a preferred orientation of the [1 1 1] direction parallel to the substrate surface, regardless of the substrate temperature. As the substrate temperature increased, the crystallinity of CdTe films improved. The grain size of the CdTe films increased after CdCl2 post treatment. In addition, the optical band gap increased with the substrate temperature. The conversion efficiency of the CdS/CdTe solar cell improved at higher substrate temperatures. The maximum efficiency, 9.23%, was obtained at a substrate temperature of 400 degrees C, with an open-circuit voltage (V(oc)) of 0.78 V, a short-circuit current density (J(sc)) of 20.4 mA/cm2, and a fill factor of 0.58.

  20. Efficiency enhancement due to self-organization of nano-structures in Cd(S, Te) solar cell material

    Science.gov (United States)

    Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2014-03-01

    CdTe is one of the most important solar cell materials. Its energy gap is 1.44 eV, which is ideal for solar cell application. So far, conversion efficiency of 18.3 percent has been realized, but it is lower than the Shockley-Queisser limit. In this paper, we propose computational materials design for enhancing conversion efficiency by using self-organization in Cd(Te, S) alloy semiconductor. Firstly, we performed cluster expansion of total energy of the Cd(Te, S) system and simulated self-organization of nano-structures in Cd(Te, S) by using Monte Carlo method. It is found that layered structure becomes stable by applying strain during the crystal growth. The electronic structure of the self-organized layered structure was calculated by using the hybrid method (HSE06) implemented in the VASP code to derive optical absorption coefficient. By using the calculated absorption coefficient the efficiency limit was derived based on the Shockley-Queisser theory. It is shown that the efficiency limit does not change so much due to the nano-structure formation. However, our calculation shows spatial separation between photo-generated electrons and holes. This might enhance the efficiency due to the suppression of recombination.

  1. Solar cell materials developing technologies

    CERN Document Server

    Conibeer, Gavin J

    2014-01-01

    This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

  2. Cascade Organic Solar Cells

    KAUST Repository

    Schlenker, Cody W.

    2011-09-27

    We demonstrate planar organic solar cells consisting of a series of complementary donor materials with cascading exciton energies, incorporated in the following structure: glass/indium-tin-oxide/donor cascade/C 60/bathocuproine/Al. Using a tetracene layer grown in a descending energy cascade on 5,6-diphenyl-tetracene and capped with 5,6,11,12-tetraphenyl- tetracene, where the accessibility of the π-system in each material is expected to influence the rate of parasitic carrier leakage and charge recombination at the donor/acceptor interface, we observe an increase in open circuit voltage (Voc) of approximately 40% (corresponding to a change of +200 mV) compared to that of a single tetracene donor. Little change is observed in other parameters such as fill factor and short circuit current density (FF = 0.50 ± 0.02 and Jsc = 2.55 ± 0.23 mA/cm2) compared to those of the control tetracene-C60 solar cells (FF = 0.54 ± 0.02 and Jsc = 2.86 ± 0.23 mA/cm2). We demonstrate that this cascade architecture is effective in reducing losses due to polaron pair recombination at donor-acceptor interfaces, while enhancing spectral coverage, resulting in a substantial increase in the power conversion efficiency for cascade organic photovoltaic cells compared to tetracene and pentacene based devices with a single donor layer. © 2011 American Chemical Society.

  3. Bifacial tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wojtczuk, Steven J.; Chiu, Philip T.; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

    2016-06-14

    A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

  4. Microanalysis of Solar Cells

    Science.gov (United States)

    Kazmerski, Lawrence L.

    1980-11-01

    Applications of complementary surface analysis techniques (AES, SIMS, XPS) to solar cell device problems are discussed. Several examples of device interface and grain boundary problems are presented. Silicon, gallium arsenide and indium phosphide based devices are reviewed. Results of compositional and chemical analysis are correlated directly with EBIC measurements performed in-situ on identical sample areas. Those are, in turn, correlated with resulting photovoltaic device performance. The importance of microanalysis to the solution of critical device problems in the photovoltaics technology is emphasized.

  5. Space Solar Cell Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Measures, characterizes, and analyzes photovoltaic materials and devices. The primary focus is the measurement and characterization of solar cell response...

  6. Dye Sensitized Solar Cell, DSSC

    Directory of Open Access Journals (Sweden)

    Pongsatorn Amornpitoksuk

    2003-07-01

    Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

  7. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Science.gov (United States)

    Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.; Kuciauskas, Darius; Metzger, Wyatt K.

    2016-11-01

    CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  8. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Directory of Open Access Journals (Sweden)

    James M. Burst

    2016-11-01

    Full Text Available CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm−3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  9. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  10. Photoluminescence study of Cu diffusion in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Grecu, D.; Compaan, A.D. [Department of Physics, University of Toledo, Toledo, Ohio (United States)

    1999-03-01

    We report changes in the photoluminescence spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. Films grown by vapor transport deposition and radio-frequency sputtering as well as single crystal CdTe were included in the study. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy broad-band transition. The PL is subsequently used to explore the effects of electric fields on Cu diffusion. The role of Te as a diffusion barrier for Cu is investigated. {copyright} {ital 1999 American Institute of Physics.}

  11. Effect of In Situ Thermal Annealing Process on Structural, Optical and Electrical Properties of CdSCdTe Thin-Film Solar Cells Fabricated by Pulsed Laser Deposition

    Science.gov (United States)

    Al-mebir, Alaa Ayad Khedhair

    Cadmium Telluride has long been recognized as the second lowest- cost material after Si in the world photovoltaic market, specifically for thin-film solar cells. The two attractive properties of the CdTe are its nearly ideal band gap of ˜1.5 eV for single p-n junction photovoltaic and its high optical absorption coefficient up to 105 cm-1. Therefore, a thickness of ˜1 mum of CdTe can absorb up to 90% of the incident light. The key to high-performance thin film CdTe-based solar cells is controlling microstructure of the CdS/CdTe through obtaining high-quality crystalline CdTe thin films that have low density pinholes and other defects and form high-quality p-n heterojunction interfaces on the CdS or other window layers. Considering these, the relative high temperatures used for CdTe thick film growth may not be suitable in the thin film case due to lack of control in CdTe microstructure evolution. Therefore, development of low-temperature processes for CdTe thin film solar cells is important to achieving a precise control of the CdS/CdTe microstructure and optoelectronic properties. In addition, low temperatures provide benefits in wider selection of substrates especially those for low-cost, flexible solar cells applications. However, the CdS/CdTe solar cells based on thin CdTe films fabricated at low temperature have generally poor performance as a result of increased density of grain boundaries and defects. In order to address this issue, we have developed an in situ thermal annealing process (iTAP) immediately after the CdS/CdTe deposition using Pulsed laser deposition (PLD) at 200 °C and before the common ex situ CdCl2 annealing typically employed for optimization of the CdTe-based solar cells. A systematic study on the microstructure, optical and optoelectronic properties of CdS/CdTe solar cells processed under different iTAP conditions has been carried out. It has been found that these physical properties depend sensitively on the iTAP processing conditions

  12. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  13. Flexible CdTe/CdS solar cells on thin glass substrates.

    Science.gov (United States)

    Seo, Won-Oh; Kim, Donghwan; Kim, Jihyun

    2015-04-06

    We demonstrate flexible CdTe/CdS thin-film solar cells in a superstrate configuration with a cell conversion efficiency as high as 10.9%. We deposit a CdS window layer and a CdTe absorber layer on a flexible glass substrate using the chemical bath deposition method and close-spaced sublimation method, respectively. The thin and flexible glass substrates were able to tolerate a high growth temperature and post-growth processes. We repeatedly apply a strain of 0.15% to the fabricated CdTe/CdS solar cells, and this was shown to have a negligible effect on their performances. Our proposed thin films-on-compliant substrate structure, which was prepared by replacing a rigid glass with a bendable one, demonstrated flexible CdTe/CdS p-n junction thin-film solar cells without compromising the cell performance.

  14. Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

    2012-06-01

    Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

  15. Carbon nanotube solar cells.

    Directory of Open Access Journals (Sweden)

    Colin Klinger

    Full Text Available We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabricate using a spray-paint technique. We observe that cells with a lower concentration of carbon nanotubes on the active semiconducting electrode perform better than cells with a higher concentration of nanotubes. This effect is contrary to the expectation that a larger number of nanotubes would lead to more photoconversion and therefore more power generation. We attribute this to the presence of metallic nanotubes that provide a short for photo-excited electrons, bypassing the load. We demonstrate optimization strategies that improve cell efficiency by orders of magnitude. Once it is possible to make semiconducting-only carbon nanotube films, that may provide the greatest efficiency improvement.

  16. Solution-processed sintered nanocrystal solar cells via layer-by-layer assembly.

    Science.gov (United States)

    Jasieniak, Jacek; MacDonald, Brandon I; Watkins, Scott E; Mulvaney, Paul

    2011-07-13

    Solar cells made by high temperature and vacuum processes from inorganic semiconductors are at a perceived cost disadvantage when compared with solution-processed systems such as organic and dye-sensitized solar cells. We demonstrate that totally solution processable solar cells can be fabricated from inorganic nanocrystal inks in air at temperature as low as 300 °C. Focusing on a CdTe/ZnO thin-film system, we report solar cells that achieve power conversion efficiencies of 6.9% with greater than 90% internal quantum efficiency. In our approach, nanocrystals are deposited from solution in a layer-by-layer process. Chemical and thermal treatments between layers induce large scale grain formation, turning the 4 nm CdTe particles into pinhole-free films with an optimized average crystallite size of ∼70 nm. Through capacitance-voltage measurements we demonstrate that the CdTe layer is fully depleted which enables the charge carrier collection to be maximized.

  17. Biocompatible fluorescence-enhanced ZrO{sub 2}-CdTe quantum dot nanocomposite for in vitro cell imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lu Zhisong; Zhu Zhihong; Zheng Xinting; Qiao Yan; Li Changming [School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, 637457 (Singapore); Guo Jun, E-mail: ecmli@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

    2011-04-15

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO{sub 2}, an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO{sub 2}-QD nanocomposites with the size of {approx} 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO{sub 2}-QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  18. Cu-Related Recombination in CdS/CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Demtsu, S. H.; Albin, D. S.; Sites, J. R.; Metzger, W. K.; Duda, A.

    2008-02-01

    Cu used in the back contact of CdS/CdTe solar cells is known to improve contact behavior and open-circuit voltage. A study of devices made with varying Cu amounts confirmed these observations. However, Cu was also found to be deleterious to current collection. Time-resolved photoluminescence measurements of CdTe devices show that carrier lifetime decreased with increased Cu concentration. Drive-level-capacitance-profiling and low-temperature photoluminescence suggest this decrease in lifetime was associated with increased recombination center density introduced by Cu in the CdTe layer. The resulting impact of increased Cu on device performance was a voltage-dependent collection of photogenerated carriers that reduced fill-factor.

  19. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  20. An Introduction to Solar Cells

    Science.gov (United States)

    Feldman, Bernard J.

    2010-01-01

    Most likely, solar cells will play a significant role in this country's strategy to address the two interrelated issues of global warming and dependence on imported oil. The purpose of this paper is to present an explanation of how solar cells work at an introductory high school, college, or university physics course level. The treatment presented…

  1. Cytotoxicity of CdTe quantum dots in human umbilical vein endothelial cells: the involvement of cellular uptake and induction of pro-apoptotic endoplasmic reticulum stress

    Directory of Open Access Journals (Sweden)

    Yan M

    2016-02-01

    Full Text Available Ming Yan,1,* Yun Zhang,2,* Haiyan Qin,3 Kezhou Liu,1 Miao Guo,1 Yakun Ge,1 Mingen Xu,1 Yonghong Sun,4 Xiaoxiang Zheng4 1Department of Biomedical Engineering, College of Life Information Science and Instrument Engineering, Hangzhou Dianzi University, Hangzhou, 2Basic Medical Sciences, College of Medicine, Shaoxing University, Shaoxing, 3Department of Chemistry, Zhejiang University, 4Zhejiang Provincial Key Laboratory of Cardio-Cerebral Vascular Detection Technology and Medicinal Effectiveness Appraisal, Department of Biomedical Engineering, Zhejiang University, Hangzhou, People’s Republic of China *These authors contributed equally to this work Abstract: Cadmium telluride quantum dots (CdTe QDs have been proposed to induce oxidative stress, which plays a crucial role in CdTe QDs-mediated mitochondrial-dependent apoptosis in human umbilical vein endothelial cells (HUVECs. However, the direct interactions of CdTe QDs with HUVECs and their potential impairment of other organelles like endoplasmic reticulum (ER in HUVECs are poorly understood. In this study, we reported that the negatively charged CdTe QDs (–21.63±0.91 mV, with good dispersity and fluorescence stability, were rapidly internalized via endocytosis by HUVECs, as the notable internalization could be inhibited up to 95.52% by energy depletion (NaN3/deoxyglucose or low temperature. The endocytosis inhibitors (methyl-β-cyclodextrin, genistein, sucrose, chlorpromazine, and colchicine dramatically decreased the uptake of CdTe QDs by HUVECs, suggesting that both caveolae/raft- and clathrin-mediated endocytosis were involved in the endothelial uptake of CdTe QDs. Using immunocytochemistry, a striking overlap of the internalized CdTe QDs and ER marker was observed, which indicates that QDs may be transported to ER. The CdTe QDs also caused remarkable ER stress responses in HUVECs, confirmed by significant dilatation of ER cisternae, upregulation of ER stress markers GRP78/GRP94, and

  2. Nanostructuring of Solar Cell Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... and characterized for comparison. Power conversion eciency of 16.5% was obtained for this batch of RIE-textured Si solar cells. The eciency of the KOH-textured reference cell was 17.8%. Quantum Efficiency measurements and carrier loss analysis show that the lower eciency of the RIE-textured cells is primarily due...

  3. High Performance Perovskite Solar Cells.

    Science.gov (United States)

    Tong, Xin; Lin, Feng; Wu, Jiang; Wang, Zhiming M

    2016-05-01

    Perovskite solar cells fabricated from organometal halide light harvesters have captured significant attention due to their tremendously low device costs as well as unprecedented rapid progress on power conversion efficiency (PCE). A certified PCE of 20.1% was achieved in late 2014 following the first study of long-term stable all-solid-state perovskite solar cell with a PCE of 9.7% in 2012, showing their promising potential towards future cost-effective and high performance solar cells. Here, notable achievements of primary device configuration involving perovskite layer, hole-transporting materials (HTMs) and electron-transporting materials (ETMs) are reviewed. Numerous strategies for enhancing photovoltaic parameters of perovskite solar cells, including morphology and crystallization control of perovskite layer, HTMs design and ETMs modifications are discussed in detail. In addition, perovskite solar cells outside of HTMs and ETMs are mentioned as well, providing guidelines for further simplification of device processing and hence cost reduction.

  4. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Science.gov (United States)

    Luo, H.; Ma, L. G.; Xie, W. M.; Wei, Z. L.; Gao, K. G.; Zhang, F. M.; Wu, X. S.

    2016-04-01

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na2TeO3 instead of the usually used TeO2. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells.

  5. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, H.; Ma, L.G.; Xie, W.M.; Wei, Z.L.; Gao, K.G.; Zhang, F.M.; Wu, X.S. [Nanjing University, Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructures, School of Physics, Nanjing (China)

    2016-04-15

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na{sub 2}TeO{sub 3} instead of the usually used TeO{sub 2}. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells. (orig.)

  6. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  7. Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    1999-07-01

    We have induced recrystallization of small grain CdTe thin films deposited at low temperatures by close-spaced sublimation (CSS), using a standard CdCl{sub 2} annealing treatment. We also studied the changes in the physical properties of CdTe films deposited by radio-frequency magnetron sputtering after the same post-deposition processing. We demonstrated that the effects of CdCl{sub 2} on the physical properties of CdTe films are similar, and independent of the deposition method. The recrystallization process is linked directly to the grain size and stress in the films. These studies indicated the feasibility of using lower-temperature processes in fabricating efficient CSS CdTe solar cells. We believe that, after the optimization of the parameters of the chemical treatment, these films can attain a quality similar to CSS films grown using current standard conditions. {copyright} {ital 1999 American Vacuum Society.}

  8. Upconversion in solar cells.

    Science.gov (United States)

    van Sark, Wilfried Gjhm; de Wild, Jessica; Rath, Jatin K; Meijerink, Andries; Schropp, Ruud Ei

    2013-02-15

    The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells.

  9. Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States); Varga, Tamas [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

    2013-11-15

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 Å while ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an √2 × √2 R45° configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.0–2.2 eV) matched well with the predicted value.

  10. Band offsets for mismatched interfaces. The special case of ZnO on CdTe (001)

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, John E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kaspar, Tiffany C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Droubay, Timothy C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Varga, Tamas [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-08-02

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° √2 x √2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

  11. Progress in polymer solar cell

    Institute of Scientific and Technical Information of China (English)

    LI LiGui; LU GuangHao; YANG XiaoNiu; ZHOU EnLe

    2007-01-01

    This review outlines current progresses in polymer solar cell. Compared to traditional silicon-based photovoltaic (PV) technology, the completely different principle of optoelectric response in the polymer cell results in a novel configuration of the device and more complicated photovoltaic generation process. The conception of bulk-heterojunction (BHJ) is introduced and its advantage in terms of morphology is addressed. The main aspects including the morphology of photoactive layer, which limit the efficiency and stability of polymer solar cell, are discussed in detail. The solutions to boosting up both the efficiency and stability (lifetime) of the polymer solar cell are highlighted at the end of this review.

  12. Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

    Science.gov (United States)

    Wang, Zhao; Li, Bing; Zheng, Xu; Xie, Jing; Huang, Zheng; Liu, Cai; Feng, Liang-Huan; Zheng, Jia-Gui

    2010-02-01

    Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev + 0.128 eV, originates from the vacancy of Cd (VCd). The electron trap E1, found at Ec -0.178 eV, is considered to be correlated with the interstitial Cuj+ in CdTe.

  13. Photon management in solar cells

    CERN Document Server

    Rau, Uwe; Gombert, Andreas

    2015-01-01

    Written by renowned experts in the field of photon management in solar cells, this one-stop reference gives an introduction to the physics of light management in solar cells, and discusses the different concepts and methods of applying photon management. The authors cover the physics, principles, concepts, technologies, and methods used, explaining how to increase the efficiency of solar cells by splitting or modifying the solar spectrum before they absorb the sunlight. In so doing, they present novel concepts and materials allowing for the cheaper, more flexible manufacture of solar cells and systems. For educational purposes, the authors have split the reasons for photon management into spatial and spectral light management. Bridging the gap between the photonics and the photovoltaics communities, this is an invaluable reference for materials scientists, physicists in industry, experimental physicists, lecturers in physics, Ph.D. students in physics and material sciences, engineers in power technology, appl...

  14. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L. [University of South Florida, Tampa, FL (United States)

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  15. CdS/CdTe solar cells with MoOx as back contact buffers

    Science.gov (United States)

    Lin, Hao; Xia, Wei; Wu, Hsiang N.; Tang, Ching W.

    2010-09-01

    Ohmic back contacts for CdS/CdTe solar cells with MoOx as the contact buffer have been demonstrated. With contacts such as MoOx/Ni and MoOx/Al, cell efficiencies comparable to those with conventional back contacts have been produced. Thermal stress tests indicate that MoOx is effective in suppressing metal diffusion into p-CdTe. The usefulness of MoOx is attributed to its unusually high work function which is needed to match that of p-type CdTe in producing contacts of low resistance.

  16. lmmunofiuorescent Labeling of Human HepG2 Cells with CdTe Quantum Dot Probe Conjugated with Anti-pan CK MAb

    Institute of Scientific and Technical Information of China (English)

    SUI Yu-jie; ZHANG Gui-zhen; WANG Qian; WANG Ya-li; WU Mei; DU Zhen-wu; ZHANG Jie; JIANG Ri-hua

    2011-01-01

    A relatively sensitive, specific, and photostable method for the detection of cytokeratin of cancer cells via conjugation with cadmium telluride quantum dots(CdTe QDs) was described. Water soluble CdTe QDs were conjugated to anti-pan-cytokeratin(CK) monoclonal antibody(MAb) through coupling reagent [1-ethyi-3-(3-dimethylamino propyl)carbodiimide, EDC] and the conjugates were purified by dialysis. The expression of pan CK protein in HepG2 cells was observed by immunocytochemistry and direct immunofluorescence via QDs-Ab conjugates respectively. Fluorescence intensity and photostability of QDs were compared with those of FITC(fiuorescein isothiocyanate). The results show that the QDs-Ab conjugates recognized specifically pan CK protein in HepG2 cells. Compared with FITC, CdTe QDs had higher brightness and photostability without obvious photobleaching under continuous exciting light illumination for 30 min and after the placement at room temperature for 3 d. The results indicate that conjugates of CdTe quantum dot with anti-pan CK MAb can be used for labeling cancer cells derived from epithelial tissues, which provides the basis for the detection of circulating tumor cells(CTCs).

  17. Influence of Surface Preparation on Scanning Kelvin Probe Microscopy and Electron Backscatter Diffraction Analysis of Cross Sections of CdTe/CdS Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C. S.; Al-Jassim, M. M.

    2011-06-01

    In this work we investigated different methods to prepare cross sections of CdTe/CdS solar cells for EBSD and SKPM analyses. We observed that procedures used to prepare surfaces for EBSD are not suitable to prepare cross sections, and we were able to develop a process using polishing and ion-beam milling. This process resulted in very good results and allowed us to reveal important aspects of the cross section of the CdTe film. For SKPM, polishing and a light ion-beam milling resulted in cross sections that provided good data. We were able to observe the depletion region on the CdTe film and the p-n junction as well as the interdiffusion layer between CdTe and CdS. However, preparing good-quality cross sections for SKPM is not a reproducible process, and artifacts are often observed.

  18. Influence of deposition parameters on the properties of CdTe films deposited by close spaced sublimation

    OpenAIRE

    Falcão Vivienne Denise; Pinheiro Wagner Anacleto; Ferreira Carlos Luiz; Cruz Leila Rosa de Oliveira

    2006-01-01

    CdTe thin films are used as absorber layer in CdS/CdTe solar cells. The microstructure of this absorber layer plays a fundamental role in photovoltaic conversion and can be controlled by the deposition parameters used during the film growth. In this work, CdTe thin films were deposited by the CSS method onto glass substrates previously covered with In2O3:Sn. The effects of pressure, source temperature and substrate temperature on the microstructural properties of the films were studied. The p...

  19. Physical basis for the design of CdS/CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D.F. (Mexico)

    2006-04-14

    Solar cells based on polycrystalline semiconductor thin films have great potential for decreasing the cost of photovoltaic energy. However, this kind of solar cells has characteristics very different from those fabricated on crystalline silicon for which the carrier-transport and behavior is clearly known. Instead, for hetero-junction solar cells made on less known polycrystalline materials the design is almost empirical. In this work, several physical aspects related to the behavior of polycrystalline thin film solar cells will be discussed, and some considerations for an adequate design of this kind of solar cells will be made. For example, the recombination at the grain boundaries and its influence on the short circuit current as a function of the crystallite sizes on the active material is considered. Based on this, the appropriate thickness of each layer and their resistivity will be discussed. As an example, these considerations will be applied to CdS/CdTe heterojunction solar cells, taking into account typical properties of CdTe thin films used for solar cells. (author)

  20. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  1. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  2. Dust Removal from Solar Cells

    Science.gov (United States)

    Ashpis, David E. (Inventor)

    2015-01-01

    A solar panel cleaning device includes a solar panel having a plurality of photovoltaic cells arranged in rows and embedded in the solar panel with space between the rows. A transparent dielectric overlay is affixed to the solar panel. A plurality of electrode pairs each of which includes an upper and a lower electrode are arranged on opposite sides of the transparent dielectric and are affixed thereto. The electrodes may be transparent electrodes which may be arranged without concern for blocking sunlight to the solar panel. The solar panel may be a dielectric and its dielectric properties may be continuously and spatially variable. Alternatively the dielectric used may have dielectric segments which produce different electrical field and which affects the wind "generated."

  3. Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures

    Energy Technology Data Exchange (ETDEWEB)

    Jarkov, A., E-mail: aleksjarkov@gmail.com [Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, 19086 Tallinn (Estonia); Bereznev, S.; Volobujeva, O. [Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, 19086 Tallinn (Estonia); Traksmaa, R. [Tallinn University of Technology, Materials Research Center, Ehitajate tee 5, 19086 Tallinn (Estonia); Tverjanovich, A. [Saint-Petersburg State University, 198503 Saint-Petersburg, Staryj Petergof, Ulyanovskaya 5 (Russian Federation); Öpik, A.; Mellikov, E. [Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2013-05-01

    Glass/indium tin oxide/CdS/CdTe photovoltaic structures were prepared using the high vacuum evaporation method, followed by a typical activation procedure, which involves annealing of the structures at 415–430 °C in the presence of CdCl{sub 2} in air. The main purpose of this work was to prepare and evaluate the performance of complete CdS/CdTe solar cell structures with polypyrrole (PPy) back contact and compare it to the structures with standard, copper containing back contact. Back contact layers of PPy doped with ß-naphthalene sulfonate were deposited onto activated CdTe layers by photo-assisted electrodeposition technique in a three-electrode electrochemical cell. It was found that intensive white light illumination from a xenon lamp facilitates PPy deposition at a lower applied potential range and improves quality of obtained polymer films. Applied technique gives the possibility to deposit the PPy layer strictly onto illuminated photoactive CdTe surface eliminating possible short-circuiting through pinholes and cracks in CdTe photoabsorber layer. Furthermore, relatively low deposition potential values give the possibility to reduce electrochemical degradation of CdS/CdTe photovoltaic structure in an electrochemical cell. - Highlights: ► Polypyrrole (PPy) conductive polymer back contact (BC) to CdTe semiconductor. ► Hybrid organic/inorganic photovoltaic structures. ► PPy layer to CdTe by photo-assisted electrodeposition technique ► Comparable efficiency of cells with PPy and conventional inorganic Cu{sub x}Te BC.

  4. Fundamentals of thin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yablonovitch, E. [Univ. of California, Los Angeles, CA (United States)

    1995-08-01

    It is now widely recognized that thin solar cells can present certain advantages for performance and cost. This is particularly the case when light trapping in the semiconductor film is incorporated, as compensation for the diminished single path thickness of the solar cell. In a solar cell thinner than a minority carrier diffusion length, the current collection is of course very easy. More importantly the concentration of an equivalent number of carriers in a thinner volume results in a higher Free Energy, or open circuit voltage. This extra Free Energy may be regarded as due to the concentration factor, just as it would be for photons, electrons, or for any chemical species. The final advantage of a thin solar cell is in the diminished material usage, a factor of considerable importance when we consider the material cost of the high quality semiconductors which we hope to employ.

  5. Improved Performance of CdS/CdTe Quantum Dot-Sensitized Solar Cells Incorporating Single-Walled Carbon Nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Ho Kyeong; Park, Tae Hee; Lee, Jun Young; Yang, Jong Hee; Han, Jin Wook; Yi, Whi Kun [Hanyang University, Seoul (Korea, Republic of)

    2014-09-15

    We fabricated quantum dot-sensitized solar cells (QDSSCs) using cadmium sulfide (CdS) and cadmium telluride (CdTe) quantum dots (QDs) as sensitizers. A spin coated TiO{sub 2} nanoparticle (NP) film on tin-doped indium oxide glass and sputtered Au on fluorine-doped tin oxide glass were used as photo-anode and counter electrode, respectively. CdS QDs were deposited onto the mesoporous TiO{sub 2} layer by a successive ionic layer adsorption and reaction method. Pre-synthesized CdTe QDs were deposited onto a layer of CdS QDs using a direct adsorption technique. CdS/CdTe QDSSCs had high light harvesting ability compared with CdS or CdTe QDSSCs. QDSSCs incorporating single-walled carbon nanotubes (SWNTs), sprayed onto the substrate before deposition of the next layer or mixed with TiO{sub 2} NPs, mostly exhibited enhanced photo cell efficiency compared with the pristine cell. In particular, a maximum rate increase of 24% was obtained with the solar cell containing a TiO{sub 2} layer mixed with SWNTs.

  6. Solar cell with back side contacts

    Energy Technology Data Exchange (ETDEWEB)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  7. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  8. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  9. Filmes calcogenetos para células solares: crescimento e propriedades

    OpenAIRE

    Salomé, Pedro Manuel Parracho

    2011-01-01

    Thin film solar cells have in recent years gained market quota against traditional silicon photovoltaic panels. These developments were in a large part due to CdTe solar panels on whose development started earlier than their competitors. Panels based on Cu(In,Ga)Se2 (CIGS), despite being more efficient in a laboratory and industrial scale than the CdTe ones, still need a growth technology cheaper and easier to apply in industry. Although usually presented as a good candidate...

  10. Photoluminescence study of copper-doped cadmium-telluride and related stability issues for cadmium-sulfide/cadmium-telluride solar-cell devices

    Science.gov (United States)

    Grecu, Dan S.

    Lifetime predictions for CdTe photovoltaic modules represent a complex problem, partly due to the fact that a fundamental understanding of the CdTe material properties and device operation is far from being complete. One of the stability issues actively investigated is the use of Cu for the formation of a back contact. Cu is one of the few good p-dopants for CdTe, which, by forming a p+ layer at the surface of the CdTe, relaxes the requirement for a high work function metal at the back contact. On the other hand, it is known that Cu is a fast diffuser in CdTe and it was suggested that Cu migration within the device could lead to some of the observed degradation effects. in this work, we explore Cu states and migration effects in CdTe and CdS/CdTe devices using photoluminescence (PL) as the main investigative method. We confirm the assignment of several Cu-related PL transitions observed in the CdTe spectrum, namely, a bound exciton transition (X, CUCd) at 1.59eV and a donor-acceptor pair (DAP) (D, CuCd) at 1.45eV. In addition, we observe and characterize new effects related to Cu diffusion in CdTe: (a) the quenching of a DAP, Cd-vacancy related band, at 1.55eV, and (b) the formation of a new strong lattice-coupled transition at 1.555eV. These effects, we suggest, are consistent with Cu atoms occupying substitutional positions on the Cd sublattice and/or forming Frenkel pairs of the type CUi-VCd- with Cd vacancies. Similar spectral characteristics are observed for the low-S-content CdS-CdTe alloy existent in the vicinity of the junction in solar-cell devices. Using Cu-induced changes in the PL spectrum, we propose that Cu diffuses rapidly through an interstitial mechanism, as a positively charged ion, throughout the CdTe and possibly the CdS layer during the back-contact fabrication procedure. Applied electrical fields can reverse the direction of Cu migration leading to device performance degradation. In addition, it was found that Cu-doped CdTe samples exhibit a

  11. Nanostructures for Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jarosław

    2016-01-01

    The experimental work in this thesis is focused on the fabrication of nanostructures that can be implemented in organic solar cell (OSC) architecture for enhancement of the device performance. Solar devices made from organic material are gaining increased attention, compared to their inorganic......, easily replicable and scalable technique using PAA templates. Control of the anodization parameters allows control over the dimensions of the structures and therefore easy control of the underlying dimples dimensions. The area exposed to the acidic electrolyte is the only factor limiting scalability...... for organic solar cell applications, opening new patterning possibilities....

  12. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  13. Study of deep level defects of n+-CdS/p-CdTe solar cells

    Science.gov (United States)

    Kharangarh, Poonam Rani

    Among various photovoltaic materials, polycrystalline cadmium telluride thin film is now the most promising material, due to its low production cost excellent stability and reliability. Current-voltage and capacitance-voltage measurements of CdTe photovoltaic devices at different temperatures can provide valuable information about non-idealities in the n-p semiconductor junction. There are certain limitations which limit the efficiency of CdTe solar cells. There is no real distinction between defects and impurities in CdTe solar cells as both act as beneficial dopants or detrimental traps unlike Si where intentional shallow dopants and traps are distinctly different. Therefore, the role of defect states on CdTe solar cell performance, the effect of processing on defect states, and simple and effective characterization techniques must be investigated and identified. In this research the thin film n+-CdS/p-CdTe solar cells made with evaporated Cu as a primary back contact, are characterized by using the temperature dependence of the reverse bias diode current (J-V-T) to determine the energy levels of deep defects. The results of the J-V-T measurements on solar cells made at NJIT show that while modest amounts of Cu enhance cell performance, an excessive high temperature annealing step degrades device quality and reduces efficiency. This work addresses the error that can be introduced during defect energy level estimation if the temperature dependence of the carrier capture cross-section is neglected. Therefore, the location of traps is derived using a Shockley-Read-Hall recombination model with modified assumptions. A Cu-related deep level defect with activation energy of 0.57eV is observed for Cu evaporated back contact cells and an intrinsic defect with activation energy 0.89eV is found. Frequency dispersion in Capacitance-Voltage measurements confirms the presence of Cu-related deep level traps for cells with a Cu evaporated back contact, whereas no such defects

  14. Optimized conditions for the improvement of thin film CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, H.A., E-mail: hussein_abdelhafez2000@yahoo.com

    2015-08-31

    Efficient thin film CdS/CdTe solar cell performance requires optimum parameters of each layer of this cell and of the barrier structure. Moreover, the effect of optical losses, recombination losses at front and back surface of CdTe and recombination losses in the space-charge region (SCR) must be considered in order to really analyze the role of these parameters on the performance of these cells. This work is focused on studying theoretically the effect of the thickness of the front contact (ITO), thickness of the window layer (CdS), thickness of the absorber layer (CdTe), width of the space-charge region and electron lifetime on the efficiency of CdS/CdTe solar cells. The reflection losses from interfaces and absorption losses in ITO and CdS, front and rear surface recombination losses of CdTe as well as recombination losses in SCR have been studied. It has been observed that the short-circuit current strongly depends on the thickness of ITO, thickness of CdS, thickness CdTe and electron lifetime. The concentration of uncompensated impurities (N{sub a} − N{sub d}) in CdTe, which determines the width of SCR, plays a key role in the generation of photocurrent. The recombination losses in the SCR decrease rapidly with increasing the carrier lifetime in this region and can be ignored at lifetime of 10{sup −7} s. The reflectivity from the back contact introduces a small influence in increasing the short-current density particularly at thick absorber layer (5–8 μm). Under the conditions of N{sub a} − N{sub d} ~ 10{sup 16} cm{sup −3}, τ{sub n} = 10{sup −6} s, d{sub CdTe} = 8 μm, d{sub ITO} = 100 nm, and d{sub CdS} = 100 nm, the recombination and optical losses record their minimum ratio of 27%. Most of these losses (24%) are due to the optical losses. The efficiency of CdS/CdTe under these parameters is about 18.2% which is exactly matching with the recent experimental studies. Moreover, an ultrathin CdTe (= 1 μm) is sufficient to introduce high

  15. Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell

    Institute of Scientific and Technical Information of China (English)

    HE Chun-Yuan; GAO Chun-Xiao; LI Ming; HAO Ai-Min; HUANG Xiao-Wei; ZHANG Dong-Mei; YU Cui-Ling; WANG Yue

    2007-01-01

    In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell.Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa.The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the cmcm phase,respectively.The other abnormal resistivity changes at about 6.5 GPa,15.5 GPa,22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe.The origin of the abnormal change occurred at about 6.5 GPa is discussed.The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.

  16. Solar electron source and thermionic solar cell

    Directory of Open Access Journals (Sweden)

    Parham Yaghoobi

    2012-12-01

    Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

  17. Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, Joel N.; Burst, James M.; Albin, David S.; Reese, Matthew O.; Jensen, Soren A.; Johnston, Steven W.; Kuciauskas, Darius; Swain, Santosh K.; Ablekim, Tursun; Lynn, Kelvin G.; Fahrenbruch, Alan L.; Metzger, Wyatt K.

    2016-11-01

    We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

  18. Challenges and Prospects for Developing CdS/CdTe Substrate Solar Cells on Mo foils

    OpenAIRE

    Williams, Ben; Major, Jonathan; Bowen, Leon; Phillips, Laurie; Zoppi, Guillaume; Forbes, Ian; Durose, Ken

    2014-01-01

    ITO/ZnO/CdS/CdTe/Mo solar cells have been grown in the substrate configuration by a combination of close-space sublimation and RF sputtering. A peak efficiency of 8.01% was achieved. A two stage CdCl2 annealing process was developed, with the first stage contributing to CdTe doping and the second being linked to CdTe/CdS interdiffusion by secondary ion mass spectrometry analysis. The inclusion of a ZnO layer between CdS and ITO layers improved performance significantly (from η=6% to η=8%) by ...

  19. Microstructure of absorber layers in CdTe/CdS solar cells

    CERN Document Server

    Cousins, M A

    2001-01-01

    expected from extrapolating the linear trend in the bulk. These observations are explained in terms of the pinning of the CdTe grain size to the underlying CdS, and the small grain size this causes. A simple model was proposed for a link between the grain-growth to the efficiency improvement. The study also examines the behaviour of defects within grains upon CdCl sub 2 treatment provided the first direct evidence of recovery on CdCl sub 2 treatment in this system. Finally, a computer model is presented to describe the evolution of microstructure during growth. This is shown to be capable of reproducing the observed variation in grain size, but its strict physical accuracy is questioned. This work concerns the microstructure of CSS-grown CdTe layers used for CdTe/CdS solar cells. Particular attention is given to how the development of microstructure on annealing with CdCl sub 2 may correlate with increases in efficiency. By annealing pressed pellets of bulk CdTe powder, it is shown that microstructural change...

  20. Performance of Photovoltaic Modules of Different Solar Cells

    Directory of Open Access Journals (Sweden)

    Ankita Gaur

    2013-01-01

    Full Text Available In this paper, an attempt of performance evaluation of semitransparent and opaque photovoltaic (PV modules of different generation solar cells, having the maximum efficiencies reported in the literature at standard test conditions (STC, has been carried out particularly for the months of January and June. The outdoor performance is also evaluated for the commercially available semitransparent and opaque PV modules. Annual electrical energy, capitalized cost, annualized uniform cost (unacost, and cost per unit electrical energy for both types of solar modules, namely, semitransparent and opaque have also been computed along with their characteristics curves. Semitransparent PV modules have shown higher efficiencies compared to the opaque ones. Calculations show that for the PV modules made in laboratory, CdTe exhibits the maximum annual electrical energy generation resulting into minimum cost per unit electrical energy, whereas a-Si/nc-Si possesses the maximum annual electrical energy generation giving minimum cost per unit electrical energy when commercially available solar modules are concerned. CIGS has shown the lowest capitalized cost over all other PV technologies.

  1. Dye Sysentized Solar Cell (Dyssc

    Directory of Open Access Journals (Sweden)

    A. Dileep,

    2015-11-01

    Full Text Available This paper presents a Dye sensitized solar cell (DYSSC, which is called as future generation solar cell. It is a new class of green photovoltaic cell based on photosynthesis principle in nature. DYSSCs are fabricated using two different natural dyes as sensitizers, which extracted from the materials existing in nature and our life, such as flowers, leaves, fruits, traditional Chinese medicines, and beverages. The use of sensitizers having a broad absorption band in conjunction with oxide films of nanocrystalline morphology permits to harvest a large fraction of sunlight. There are good prospects to produce these cells at lower cost and much better efficiency than conventional semiconductor devices by introducing various chemical and natural dyes. DYSSC are implemented with simple and new technique to overcome the energy crisis and excess cost of semiconductor solar cells.

  2. Development of Cd1-xMgxTe thin films for application as an electron reflector in CdS/CdTe solar cells

    Science.gov (United States)

    Kobyakov, Pavel S.

    Efficiencies of CdS/CdTe photovoltaic cells significantly lag behind their theoretical limit, primarily because open-circuit voltage ( VOC) of record efficiency cells (872 mV) is well below what is expected for the CdTe band gap (1.5 eV). A substantial V OC improvement can be achieved through addition of an electron reflector (ER) layer to CdTe devices. The ER layer forms a conduction-band barrier that reflects minority-charge carriers (i.e. electrons in p-type CdTe) away from the back surface. Similar to back-surface fields in c-Si, III-V, and CIGS solar cells, the ER strategy is expected to reduce back-surface recombination and is estimated to increase CdTe VOC by about 200 mV based on numerical simulation. The presented research investigates the addition of a thin layer of wider band gap Cd1-xMgxTe (CMT) to achieve a CdTe ER structure. First, a novel co-sublimation process was developed for deposition of Cd 1-xMgxTe thin films that demonstrates excellent experimental capabilities, commercial viability, and improved alloy control over other techniques. Next, the effects of processing on material properties of CMT deposition onto CdS/CdTe structures were investigated. It was discovered that substrate temperature during CMT deposition is a critical parameter for achieving uniform CMT film coverage on polycrystalline CdTe. Furthermore, CMT film growth was found to be epitaxial on CdTe where the CMT films retain the same microstructural features as the underlying CdTe grains. Despite film uniformity, significant Mg loss from the CMT film, oxide formation, and a reduction of the optical band gap was found after CdCl2-based passivation treatments. Preliminary process optimization found that band gap degradation can be minimized by utilizing MgCl2 in addition to CdCl2 as a treatment source material. Finally, development of CdS/CdTe/Cd1-xMgxTe electron reflector devices demonstrated a barrier behavior at high voltage bias and improved voltage when CdTe thickness is held

  3. Nitric-phosphoric acid etching effects on the surface chemical composition of CdTe thin film.

    Science.gov (United States)

    Irfan, Irfan; Ding, Huanjun; Xia, Wei; Lin, Hao; Tang, Ching W.; Gao, Yongli

    2009-03-01

    Nitric-phosphoric (NP) acid etching has been regarded as one of the most successful methods for the formation of low resistance back contact with the metal electrode in CdTe based solar cells. We report back surface chemical composition for eight different durations of NP etching of CdTe polycrystalline thin film. We studied the surfaces with x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IEPS) and atomic force microscopy (AFM). Etching dependence on the back surface composition and electronic structure was observed. Valence and conduction band shifts relative to the Fermi level of the system with different etching duration were analyzed. The sample was left in open ambient condition for three weeks and XPS data were obtained again in order to study the difference in surface chemical composition with the pristine CdTe film. Unetched and highly etched part of the sample were sputtered and the depth profile analyzed.

  4. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  5. Facile method to prepare CdS nanostructure based on the CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ligang; Chen, Yuehui; Wei, Zelu; Cai, Hongling; Zhang, Fengming; Wu, Xiaoshan, E-mail: xswu@nju.edu.cn

    2015-09-15

    Graphical abstract: - Highlights: • CdS nanostructure is directly fabricated on CdTe film only by heating treatment under H{sub 2}S/N{sub 2} mixed atmosphere at a relatively low temperature (450 °C) with gold layer as the intermediate. • Nanostructure of CdS layer, varying from nanowires to nanosheets, may be controlled by the thickness of gold film. • The change of morphology adjusts its luminescence properties. - Abstract: Nanostructured cadmium sulfide (CdS) plays critical roles in electronics and optoelectronics. In this paper, we report a method to fabricate CdS nanostructure directly on CdTe film, via a thermal annealing method in H{sub 2}S/N{sub 2} mixed gas flow at a relatively low temperature (450 °C). The microstructure and optical properties of CdS nanostructure are investigated by X-ray diffraction, transmission electron microscopy, Raman, and photoluminescence. The morphology of CdS nanostructure, evolving from nanowires to nanosheets, can be controlled by the thickness of Au film deposited on the CdTe film. And CdS nanostructures are single crystalline with the hexagonal wurtzite structure. Raman spectroscopy under varying the excitation wavelengths confirm that synthesized CdS-CdTe films contain two layers, i.e., CdS nanostructure (top) and CdTe layer (bottom). The change of morphology modifies its luminescence properties. Obviously, through simply thermal annealing in H{sub 2}S/N{sub 2} mixed gas, fabricating CdS nanostructure on CdTe film can open up the new possibility for obtaining high efficient CdTe solar cell.

  6. Thermal characterization and determination of recombination parameters in CdTe films on glass substrates by using open photoacoustic cell technique

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-T, M.A. [Depto. de C. Basicas, ESCOM-IPN, Av. Miguel Othon de Mendizabal S/N, Col. Lindavista, CP 07738, Mexico DF (Mexico)]. E-mail: mgonzalezt@ipn.mx; Cruz-Orea, A. [Depto. de Fisica, CINVESTAV-IPN, Av. IPN No.2508, Col. San Pedro Zacatenco, CP. 07360, Mexico DF (Mexico); Albor-A, M.L. de [Depto. de Fisica, ESFM-IPN, Edif. 9, U.P. ' Adolfo Lopez Mateos' , CP 07738, Mexico DF (Mexico); Castillo-A, F. de L [Depto. de Fisica, ESFM-IPN, Edif. 9, U.P. ' Adolfo Lopez Mateos' , CP 07738, Mexico DF (Mexico)

    2005-06-01

    CdTe is a semiconductor with a wide variety of applications and perspectives for electronic industry (high-efficiency photoelectric cells, infrared radiation detectors, etc.). In the present work, we used photoacoustic (PA) technique to study the thermal properties and the surface recombination velocity in CdTe/glass samples. Experimental PA phase signal as a function of modulation frequency in a heat transmission configuration was fitted to the theoretical expression for PA signal, which takes into account the heat sources resulting from the absorption of light in semiconductors and the nonradiative processes involved, which depend on their thermal, optical and electronic transport properties. By this procedure, it was possible to determine the thermal diffusivity and the surface recombination velocity in these samples. The studied samples were thin polycrystalline CdTe film deposited on glass slides. CdTe layers were deposited by a hot-wall closed-spaced vapor transport method, known as gradient recrystallization and growth. The values for the deposition parameters used in this study were the following: 700 deg. C for the source temperature and 450 and 550 deg. C for the substrate temperatures with three different deposition times from 5 to 20 min (then three different film thicknesses were obtained). A clear increment in the surface velocity and surface roughness is observed as the film thickness is increased.

  7. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-12-01

    energy of 1.81 eV. Current-Voltage (I-V measurement showed that the presenting of Cu doping on CdTe film configuration could decrease its electrical resistivity from 8.40x109 Ωcm to 6.92x105 Ωcm. Indeed, as absorber layer of solar cell, the performance of CdTe thin film has been succsesfully improved by using Cu(2% as doping.

  8. Interdigitated back contact solar cells

    Science.gov (United States)

    Lundstrom, M. S.; Schwartz, R. J.

    1980-08-01

    The interdigitated back contact solar cell (IBC cell) was shown to possess a number of advantages for silicon solar cells, which operate at high concentration. A detailed discussion of the factors which need to be considered in the analysis of semiconducting devices which utilize heavily doped regions such as those which are found in solar cells in both the emitter and in the back surface field regions is given. This discussion covers the questions of: how to handle degeneracy, how to compute carrier concentrations in the absence of knowledge of the details of the band structure under heavily doped conditions, and how to reconcile the usual interpretation of heavy doping as a rigid shift of the bands with the band tailing and impurity level conduction models. It also discusses the reasons for the observed discrepancies between various experimental measurements of bandgap narrowing.

  9. Advances in Perovskite Solar Cells.

    Science.gov (United States)

    Zuo, Chuantian; Bolink, Henk J; Han, Hongwei; Huang, Jinsong; Cahen, David; Ding, Liming

    2016-07-01

    Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite-based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non-PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large-scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed.

  10. Advances in Perovskite Solar Cells

    Science.gov (United States)

    Zuo, Chuantian; Bolink, Henk J.; Han, Hongwei; Huang, Jinsong

    2016-01-01

    Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite‐based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non‐PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large‐scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed.

  11. Hybrid morphology dependence of CdTe:CdSe bulk-heterojunction solar cells.

    Science.gov (United States)

    Tan, Furui; Qu, Shengchun; Zhang, Weifeng; Wang, Zhanguo

    2014-01-01

    A nanocrystal thin-film solar cell operating on an exciton splitting pattern requires a highly efficient separation of electron-hole pairs and transportation of separated charges. A hybrid bulk-heterojunction (HBH) nanostructure providing a large contact area and interpenetrated charge channels is favorable to an inorganic nanocrystal solar cell with high performance. For this freshly appeared structure, here in this work, we have firstly explored the influence of hybrid morphology on the photovoltaic performance of CdTe:CdSe bulk-heterojunction solar cells with variation in CdSe nanoparticle morphology. Quantum dot (QD) or nanotetrapod (NT)-shaped CdSe nanocrystals have been employed together with CdTe NTs to construct different hybrid structures. The solar cells with the two different hybrid active layers show obvious difference in photovoltaic performance. The hybrid structure with densely packed and continuously interpenetrated two phases generates superior morphological and electrical properties for more efficient inorganic bulk-heterojunction solar cells, which could be readily realized in the NTs:QDs hybrid. This proved strategy is applicable and promising in designing other highly efficient inorganic hybrid solar cells.

  12. SnS Thin Film Solar Cells: Perspectives and Limitations

    Directory of Open Access Journals (Sweden)

    Simone Di Mare

    2017-02-01

    Full Text Available Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements are still limiting their market diffusion. For this reason new thin film materials, such as Cu2ZnSnS4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu2ZnSnS4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs. The sulfur loss represents one of the major challenges of SnS solar cell technology.

  13. Polymer tandem solar cells

    NARCIS (Netherlands)

    Hadipour, Afshin

    2007-01-01

    The global demand for energy is expanding continually. Therefore, realization of green power sources are needed since combustion of fossil fuels will have serious consequences for the climate on the Earth. With a photovoltaic device, the solar light can be converted into electricity which is the mos

  14. Solar cell is not absolutely ecologically sound

    Energy Technology Data Exchange (ETDEWEB)

    Van Calmthout, M.

    1988-11-01

    The University of Utrecht, Netherlands, inventorized the social costs of a large-scale solar cell industry in particular with regard to the environmental impacts. During production and dismantlement of photovoltaic systems hazardous wastes and dangerous situations can be released respectively can occur. The most important results are discussed. Four solar cell technologies are highlighted: the crystalline silicon solar cell, the amorphous silicon solar cell, the CdS/CuInSe/sub 2/ solar cell, and the GaAs solar cell. 1 fig., 1 tab.

  15. Degradation and capacitance: voltage hysteresis in CdTe devices

    Science.gov (United States)

    Albin, D. S.; Dhere, R. G.; Glynn, S. C.; del Cueto, J. A.; Metzger, W. K.

    2009-08-01

    CdS/CdTe photovoltaic solar cells were made on two different transparent conducting oxide (TCO) structures in order to identify differences in fabrication, performance, and reliability. In one set of cells, chemical vapor deposition (CVD) was used to deposit a bi-layer TCO on Corning 7059 borosilicate glass consisting of a F-doped, conductive tin-oxide (cSnO2) layer capped by an insulating (undoped), buffer (iSnO2) layer. In the other set, a more advanced bi-layer structure consisting of sputtered cadmium stannate (Cd2SnO4; CTO) as the conducting layer and zinc stannate (Zn2SnO4; ZTO) as the buffer layer was used. CTO/ZTO substrates yielded higher performance devices however performance uniformity was worse due to possible strain effects associated with TCO layer fabrication. Cells using the SnO2-based structure were only slightly lower in performance, but exhibited considerably greater performance uniformity. When subjected to accelerated lifetime testing (ALT) at 85 - 100 °C under 1-sun illumination and open-circuit bias, more degradation was observed in CdTe cells deposited on the CTO/ZTO substrates. Considerable C-V hysteresis, defined as the depletion width difference between reverse and forward direction scans, was observed in all Cu-doped CdTe cells. These same effects can also be observed in thin-film modules. Hysteresis was observed to increase with increasing stress and degradation. The mechanism for hysteresis is discussed in terms of both an ionic-drift model and one involving majority carrier emission in the space-charge region (SCR). The increased generation of hysteresis observed in CdTe cells deposited on CTO/ZTO substrates suggests potential decomposition of these latter oxides when subjected to stress testing.

  16. Photon upconversion for thin film solar cells

    NARCIS (Netherlands)

    de Wild, J.

    2012-01-01

    In this research one of the many possible methods to increase the efficiency of solar cells is described. The method investigated is based on adapting the solar light in such a way that the solar cell can convert more light into electricity. The part of the solar spectrum that is adapted is the part

  17. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  18. Porphyrins and phthalocyanines in solar photovoltaic cells

    OpenAIRE

    Walter, Michael G.; Rudine, Alexander B.; Wamser, Carl C.

    2010-01-01

    This review summarizes recent advances in the use of porphyrins, phthalocyanines, and related compounds as components of solar cells, including organic molecular solar cells, polymer cells, and dye-sensitized solar cells. The recent report of a porphyrin dye that achieves 11% power conversion efficiency in a dye-sensitized solar cell indicates that these classes of compounds can be as efficient as the more commonly used ruthenium bipyridyl derivatives.

  19. Current-Enhanced Quantum Well Solar Cells

    Institute of Scientific and Technical Information of China (English)

    LOU Chao-Gang; SUN Qiang; XU Jun; ZHANG Xiao-Bing; LEI Wei; WANG Bao-Ping; CHEN Wen-Jun; QIAO Zai-Xiang

    2006-01-01

    We present the experimental results that demonstrate the enhancement of the short-circuit current of quantum well solar cells. The spectral response shows that the introduction of quantum wells extends the absorption spectrum of solar cells. The current densities under different truncated spectrums significantly increase, showing that quantum well solar cells are suitable to be the middle cells of GaInP/GaAs/Ge triple-junction solar cells to increase their overall conversion efficiency.

  20. Solar cell circuit and method for manufacturing solar cells

    Science.gov (United States)

    Mardesich, Nick (Inventor)

    2010-01-01

    The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

  1. Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells

    OpenAIRE

    Gerbaux, X.; Pianelli, A.; Hadni, A.; Jeanniard, C.; Strimer, P.

    1980-01-01

    The growth of CdTe oriented thin films by the ENSH method - i.e. Epitaxial Nucleation in Sub-microscopic Holes of an intermediate layer closely applied on a bulk single crystal — has been recently described. The CdTe films are generally difficult to detach from the bulk crystal. However free films are needed to study the infrared transmission in the spectral region of high absorption. To get them, the vitreous or amorphous thin intermediate layers are substituted by quite soluble an oriented ...

  2. The effect of the CdCl{sub 2} treatment on CdTe/CdS thin film solar cells studied using deep level transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Komin, V.; Tetali, B.; Viswanathan, V.; Yu, S.; Morel, D.L.; Ferekides, C.S

    2003-05-01

    Thin film CdTe/CdS solar cells have been studied using deep level transient spectroscopy. The correlation-deep level transient spectroscopy (DLTS) technique was utilized as conventional analysis methods such as the boxcar-based approach were found to be inadequate under certain experimental conditions. The primary objective was to study the effect of a key processing step in the fabrication of thin film CdTe solar cells, namely the post-deposition heat treatment in the presence of CdCl{sub 2}. The substrate temperature as well as the ambient used during this process were varied around predetermined conditions for optimum solar cell performance, in order to identify performance-limiting defects, and in general improve our understanding of thin film CdTe solar cells. Solar cells without the CdCl{sub 2} heat treatment were also fabricated. A series of electron and hole traps were found in the various devices studied, with electron traps being present primarily in solar cells with limited performance.

  3. Epitaxial lift-off technology of GaAs multijunction solar cells

    Science.gov (United States)

    Knyps, P.; Dumiszewska, E.; Kaszub, W.; Przewłoka, A.; Strupinski, W.

    2016-12-01

    Epitaxial lift-off (ELO) is a process which enables the removal of solar cell structures (one junction GaAs, two junction GaAs/InGaP or three junction GaAs/InGaAs/InGaP) from the substrate on which they are grown and their transfer onto lightweight carriers such as metal or polymeric insulator films. The said solar cells exhibit superior power conversion efficiency compared with alternative single-junction photovoltaic cell designs such as those based on crystalline Si, copper indium gallium sulfide (CIGS) or CdTe. The major advantage of ELO solar cells is the potential for wafer reuse, which can enable significant manufacturing cost reduction by minimizing the consumption of expensive wafers. Here in this work we have grown one junction GaAs solar cells on GaAs (100) substrates. A 10 nm thick AlAs layer has been used as a release layer, which has been selectively etched in HF solution. We have investigated different methods of transferring thin films onto polymer and copper foils, including the usage of temporary mounting adhesives and electro-conductive pastes. Lift-off has been demonstrated to be a very promising technique for producing affordable solar cells with a very high efficiency of up to 30%.

  4. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    Science.gov (United States)

    Ferekides, Christos Savva

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C. The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. Their characteristics of the Cd(1-x)Zn(x)Te junctions degraded with increasing Zn concentration due to the crystalline quality and very small grain size (0.3 microns) in films with high ZnTe contents (greater than 25 percent). No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities

  5. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

  6. High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1992-02-01

    This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

  7. Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

    2014-02-03

    Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was η = 2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (ϕ{sub B} = 0.52 eV) and low shunt resistances (R{sub SH} < 500 Ω·cm{sup 2})

  8. Organic and hybrid solar cells

    CERN Document Server

    Huang, Hui

    2014-01-01

    This book delivers a comprehensive evaluation of organic and hybrid solar cells and identifies their fundamental principles and numerous applications. Great attention is given to the charge transport mechanism, donor and acceptor materials, interfacial materials, alternative electrodes, device engineering and physics, and device stability. The authors provide an industrial perspective on the future of photovoltaic technologies.

  9. Fullerene based organic solar cells

    NARCIS (Netherlands)

    Popescu, Lacramioara Mihaela

    2008-01-01

    The direct conversion of the sunlight into electricity is the most elegant process to generate environmentally-friendly renewable energy. Plastic solar cells offer the prospect of flexible, lightweight, lower cost of manufacturing, and hopefully an efficient way to produce electricity from sunlight.

  10. Modelling of degradation/recovery phenomena in CdS/CdTe ultrathin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorji, Nima E. [University of Bologna, Department of Electrical, Electronic, and Information Engineering, Bologna (Italy)

    2015-04-01

    The degradation/recovery phenomena in ultrathin film solar cells based on CdS/CdTe are theoretically analysed using Sah-Noyce-Shockley theory for generation and recombination in the depletion region. This theory can explain the overlap of the depletion regions at both front and back contacts where the carrier generation and collection are as important as recombination mechanism. The value of physical parameters such as uncompensated defect density, carrier recombination lifetime and band bending at interface are critically important when reducing the thickness of CdTe layer down to sub-micron. The rollover, materials inter-/out-diffusion, complex defect formation and the role of mobile ions are taken into consideration to obtain an insight into the physics of degradation/recovery phenomena in ultrathin CdTe film solar cells. Both mechanisms are precisely analysed drawing the schematics of the energy band diagrams and mobile ions transport paths which in this case is the grain interior. This means that we neglect the metal diffusion through the grain boundaries which are assumed to be completely passivated. This assumption enabled us to study the role of the defects on the carrier transport in the interiors rather than through the boundaries. (orig.)

  11. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  12. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  13. Silicon solar cells: Physical metallurgy principles

    Science.gov (United States)

    Mauk, Michael G.

    2003-05-01

    This article reviews the physical metallurgy aspects of silicon solar cells. The production of silicon solar cells relies on principles of thermochemical extractive metallurgy, phase equilibria, solidification, and kinetics. The issues related to these processes and their impact on solar cell performance and cost are discussed.

  14. Asymmetric tandem organic solar cells

    Science.gov (United States)

    Howells, Thomas J.

    Organic photovoltaics (OPVs) is an area that has attracted much attention recently as a potential low cost, sustainable source of energy with a good potential for full-scale commercialisation. Understanding the factors that determine the efficiency of such cells is therefore a high priority, as well as developing ways to boost efficiency to commercially-useful levels. In addition to an intensive search for new materials, significant effort has been spent on ways to squeeze more performance out of existing materials, such as multijunction cells. This thesis investigates double junction tandem cells in the context of small molecule organic materials. . Two different organic electron donor materials, boron subphthalocyanine chloride (SubPc) and aluminium phthalocyanine chloride (ClAlPc) were used as donors in heterojunctions with C60 to create tandem cells for this thesis. These materials have been previously used for solar cells and the absorption spectra of the donor materials complement each other, making them good candidates for tandem cell architectures. The design of the recombination layer between the cells is considered first, with silver nanoparticles demonstrated to work well as recombination centres for charges from the front and back sub-cells, necessary to avoid a charge build-up at the interface. The growth conditions for the nanoparticles are optimised, with the tandem cells outperforming the single heterojunction architecture. Optical modelling is considered as a method to improve the understanding of thin film solar cells, where interference effects from the reflective aluminium electrode are important in determining the magnitude of absorption a cell can achieve. The use of such modelling is first demonstrated in hybrid solar cells based on a SubPc donor with a titanium oxide (TiOx) acceptor; this system is ideal for observing the effects of interference as only the SubPc layer has significant absorption. The modelling is then applied to tandem cells

  15. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    Science.gov (United States)

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  16. Polymer-based solar cells

    Directory of Open Access Journals (Sweden)

    Alex C. Mayer

    2007-11-01

    Full Text Available A significant fraction of the cost of solar panels comes from the photoactive materials and sophisticated, energy-intensive processing technologies. Recently, it has been shown that the inorganic components can be replaced by semiconducting polymers capable of achieving reasonably high power conversion efficiencies. These polymers are inexpensive to synthesize and can be solution-processed in a roll-to-roll fashion with high throughput. Inherently poor polymer properties, such as low exciton diffusion lengths and low mobilities, can be overcome by nanoscale morphology. We discuss polymer-based solar cells, paying particular attention to device design and potential improvements.

  17. Improvement of the physical properties of ZnO/CdTe core-shell nanowire arrays by CdCl2 heat treatment for solar cells.

    Science.gov (United States)

    Consonni, Vincent; Renet, Sébastien; Garnier, Jérôme; Gergaud, Patrice; Artús, Lluis; Michallon, Jérôme; Rapenne, Laetitia; Appert, Estelle; Kaminski-Cachopo, Anne

    2014-01-01

    CdTe is an important compound semiconductor for solar cells, and its use in nanowire-based heterostructures may become a critical requirement, owing to the potential scarcity of tellurium. The effects of the CdCl2 heat treatment are investigated on the physical properties of vertically aligned ZnO/CdTe core-shell nanowire arrays grown by combining chemical bath deposition with close space sublimation. It is found that recrystallization phenomena are induced by the CdCl2 heat treatment in the CdTe shell composed of nanograins: its crystallinity is improved while grain growth and texture randomization occur. The presence of a tellurium crystalline phase that may decorate grain boundaries is also revealed. The CdCl2 heat treatment further favors the chlorine doping of the CdTe shell with the formation of chlorine A-centers and can result in the passivation of grain boundaries. The absorption properties of ZnO/CdTe core-shell nanowire arrays are highly efficient, and more than 80% of the incident light can be absorbed in the spectral range of the solar irradiance. The resulting photovoltaic properties of solar cells made from ZnO/CdTe core-shell nanowire arrays covered with CuSCN/Au back-side contact are also improved after the CdCl2 heat treatment. However, recombination and trap phenomena are expected to operate, and the collection of the holes that are mainly photo-generated in the CdTe shell from the CuSCN/Au back-side contact is presumably identified as the main critical point in these solar cells.

  18. Towards stable silicon nanoarray hybrid solar cells.

    Science.gov (United States)

    He, W W; Wu, K J; Wang, K; Shi, T F; Wu, L; Li, S X; Teng, D Y; Ye, C H

    2014-01-16

    Silicon nanoarray hybrid solar cells benefit from the ease of fabrication and the cost-effectiveness of the hybrid structure, and represent a new research focus towards the utilization of solar energy. However, hybrid solar cells composed of both inorganic and organic components suffer from the notorious stability issue, which has to be tackled before the hybrid solar cells could become a viable alternative for harvesting solar energy. Here we show that Si nanoarray/PEDOT:PSS hybrid solar cells with improved stability can be fabricated via eliminating the water inclusion in the initial formation of the heterojunction between Si nanoarray and PEDOT:PSS. The Si nanoarray hybrid solar cells are stable against rapid degradation in the atmosphere environment for several months without encapsulation. This finding paves the way towards the real-world applications of Si nanoarray hybrid solar cells.

  19. MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

    Science.gov (United States)

    Irvine, S. J. C.; Barrioz, V.; Lamb, D.; Jones, E. W.; Rowlands-Jones, R. L.

    2008-11-01

    This paper will review the chalcogenide thin film photovoltaic (PV) solar cells, based on cadmium telluride (CdTe) and copper indium diselenide (CIS) and discuss the potential for metalorganic chemical vapour deposition (MOCVD) to enable more advanced devices in the second generation of CdTe module production. The current generation of production methods is based on physical vapour deposition (PVD) or close-spaced sublimation (CSS). This paper concentrates on the less well-known topic of MOCVD of thin film chalcogenide cells, and in particular that of CdTe. Efficient CdTe PV solar cells (>10% AM1.5) have been demonstrated from deposition of the CdS, CdTe and CdCl 2 films in a single MOCVD chamber. The CdTe layer was doped with As and an additional high As concentration CdTe layer provides effective low resistance contacting without the need for wet etching the surface. The high level of flexibility in using MOCVD has been demonstrated where the CdS window layer has been alloyed with Zn to improve the blue response of the PV device and improve AM1.5 efficiency to 13.3%.

  20. Pin solar cells made of amorphous silicon

    Science.gov (United States)

    Plaettner, R. D.; Kruehler, W. W.

    Investigations leading to solar cells with a structure SnO2-pin and an efficiency up to 9.8% are reviewed. The production of large-surface metal/pin/transparent conductive oxide (TCO)-solar cells is discussed. A two-chamber reactor, grid structure and tinning of cells, and an a-Si-module are described. The production of glass/TCO/pin/metal-solar cells and a-SiGe:H-compounds is outlined. Measurements on solar cells and diodes including the efficiency of a-Si:H-solar cells, spectral sensitivity, diffusion lengths, field effect measurements, and modifications of solar cells (space-charge limited currents, reduction of solar cells aging) are treated.

  1. ELECTRON BOMBARDMENT OF SILICON SOLAR CELLS,

    Science.gov (United States)

    DAMAGE, ELECTRON IRRADIATION, SOLAR CELLS , SILICON, PHOTOELECTRIC CELLS(SEMICONDUCTOR), QUARTZ, GLASS, SHIELDING, CRYSTAL DEFECTS, HEAT TREATMENT, ARTIFICIAL SATELLITES, SPACECRAFT, GRAPHICS, GRAPHICS.

  2. Hybrid emitter all back contact solar cell

    Science.gov (United States)

    Loscutoff, Paul; Rim, Seung

    2016-04-12

    An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

  3. High Efficiency Polymer Solar Cells Technologies

    Institute of Scientific and Technical Information of China (English)

    Abdrhman M G; LI Hang-quan; ZHANG Li-ye; ZHOU Bing

    2006-01-01

    The conjugated polymer-based solar cell is one of the most promising devices in search of sustainable, renewable energy sources in last decade. It is the youngest field in organic solar cell research and also is certainly the fastest growing one at the moment. In addition, the key factor for polymer-based solar cells with high-efficiency is to invent new materials. Organic solar cell has attracted significant researches and commercial interest due to its low cost in fabrication and flexibility in applications. However, they suffer from relatively low conversion efficiency. The summarization of the significance and concept of high efficiency polymer solar cell technologies are presented.

  4. CdTe-CdS solar cells - Production in a new baseline and investigation of material properties

    Energy Technology Data Exchange (ETDEWEB)

    Haedrich, M. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)]. E-mail: mathias.haedrich@uni-jena.de; Lorenz, N. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Metzner, H. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Reisloehner, U. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Mack, S. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Gossla, M. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Witthuhn, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2007-05-31

    In this paper, we describe our new baseline for CSS-CdTe-CdS solar cells on 10 x 10 cm{sup 2} substrates. The deposition of the p-n junction and all the following steps were performed at the Institut fuer Festkoerperphysik (IFK) in Jena. Using the new baseline, we are already able to produce solar cells with similar properties as commercial ones. In the batch type process, all manufacturing steps can be investigated separately. We employ Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and external quantum efficiency (EQE) measurements to characterise the structure of the bulk materials and interfaces. It is demonstrated that by RBS the front contact becomes accessible for thinned CdTe films. At the back contact, RBS spectra show a tellurium accumulation which is due to etching. This tellurium rich layer is confirmed by XRD with Rietveld refinement. The intermixing at the CdS-CdTe interface caused by the activation step is quantified by a bandgap determination based on EQE measurements. From the bandgap energy of the CdTe{sub 1-x}S{sub x} compound, we calculated the sulphur fraction x at the interface. XRD measurements imply that the activation step induces a (111) texture in CdTe. With regard to an improved manufacturing process, our cells are compared to industrial cells produced by Antec Solar Energy.

  5. Automated solar-cell-array assembly machine

    Science.gov (United States)

    Costogue, E. N.; Mueller, R. L.; Person, J. K.; Yasui, R. K.

    1978-01-01

    Continuous-feeding machine automatically bonds solar cells to printed-circuit substrate. In completed machine, cells move to test station where electrical characteristics could be checked. If performance of cell is below specifications, that cell is marked and removed. All machine functions are synchronized by electronics located within unit. It may help to lower costs in future solar-cell production.

  6. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  7. Conjugated Polymer Solar Cells

    Science.gov (United States)

    2006-05-01

    oxygen since their EPR and conductivity data indicated the presence of unpaired charges. On the other hand, intramolecular CT complexes have recently...been reported for polythiophene [2], where weak CT occurs from a polymer unit cell to the covalently bonded acceptor molecule. Nevertheless, it was...intracavity optical doubler (532 nm), diode lasers (670, 810 nm) and light emitting diodes (490, 630 nm). Measurements were conducted for pump intensity 0.1

  8. Silicon Carbide Solar Cells Investigated

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  9. Semiconductors for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Moeller, H.J. (Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Materials Science and Engineering)

    1991-01-01

    This review covers the historical background of the solar cell development, the physical principles of photovoltaic energy conversion, technology of solar cell devices and the structural and physical properties of lattice defects in semiconductors. Single crystal and polycrystalline silicon, single crystal and epitaxial gallium arsenide, polycrystalline thin films and amorphous thin films are discussed in detail. Semiconductors have emerged as the most promising group of materials which can convert sunlight directly into electrical energy. They utilize the fundamental physical process that a photon that penetrates into the semiconductor and is absorbed can generate electron-hole pairs. Because of their opposite charges they can be separated by an internal electrical field and collected at two contacts thus giving rise to a voltage and photocurrent if the two contacts are connected externally. In semiconductors internal electric fields occur in connection with space charges at junctions and a variety of technological concepts are used to produce a built-in voltage. The most widely used device principle is the operation of a solar cell as a diode or p-n junction. Alternative concepts are heterojunction devices where the materials on either side of the junction are different semiconductors. (author).

  10. Atomic-resolution characterization of the effects of CdCl{sub 2} treatment on poly-crystalline CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Paulauskas, T., E-mail: tpaula2@uic.edu; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Klie, R. F. [Department of Physics, University of Illinois at Chicago, 845 W. Taylor St. M/C 273, Chicago, Illinois 60607-7059 (United States); Chan, M. K. Y. [Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Ave., Building 440, Argonne, Illinois 60439 (United States)

    2014-08-18

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl{sub 2} environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl{sub 2}, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  11. Nanocrystal grain growth and device architectures for high-efficiency CdTe ink-based photovoltaics.

    Science.gov (United States)

    Crisp, Ryan W; Panthani, Matthew G; Rance, William L; Duenow, Joel N; Parilla, Philip A; Callahan, Rebecca; Dabney, Matthew S; Berry, Joseph J; Talapin, Dmitri V; Luther, Joseph M

    2014-09-23

    We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

  12. Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Chun-Sheng; To, Bobby; Glynn, Stephen; Mahabaduge, Hasitha; Barnes, Teresa; Al-Jassim, Mowafak M.

    2016-11-21

    We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

  13. Effects of magnetic field configuration on rf sputtering for CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Shao, M.; Fischer, A.; Grecu, D.; Jayamaha, U.; Contreras-Puente, G.; Bohn, R.G. [Univ. of Toledo, OH (United States)

    1996-12-31

    The authors report studies of solar cells prepared by rf planar magnetron sputtering in which the films were deposited using magnetic field structures ranging from approximately balanced to strongly unbalanced in the type II configuration. For films grown with the unbalanced configurations, they find much stronger photoluminescence and much better cell performance than for the balanced configuration. The CdTe films show differences in electrical performance depending on magnetic field as well. These effects are interpreted as arising from the enhanced electron and ion bombardment of the film growth interface for the unbalanced magnetrons. Using two unbalanced magnetrons the authors have fabricated an all-rf-sputtered cell with NREL-verified efficiency of 11.6% at air mass 1.5 illumination.

  14. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  15. Supramolecular photochemistry and solar cells

    Directory of Open Access Journals (Sweden)

    IHA NEYDE YUKIE MURAKAMI

    2000-01-01

    Full Text Available Supramolecular photochemistry as well as solar cells are fascinating topics of current interest in Inorganic Photochemistry and very active research fields which have attracted wide attention in last two decades. A brief outline of the investigations in these fields carried out in our Laboratory of Inorganic Photochemistry and Energy Conversion is given here with no attempt of an exhaustive coverage of the literature. The emphasis is placed on recent work and information on the above mentioned subjects. Three types of supramolecular systems have been the focus of this work: (i cage-type coordination compounds; (ii second-sphere coordination compounds, exemplified by ion-pair photochemistry of cobalt complexes and (iii covalently-linked systems. In the latter, modulation of the photoluminescence and photochemistry of some rhenium complexes are discussed. Solar energy conversion and development of thin-layer photoelectrochemical solar cells based on sensitization of nanocrystalline semiconductor films by some ruthenium polypyridyl complexes are presented as an important application that resulted from specifically engineered artificial assemblies.

  16. Characterization and Modeling of CdS/CdTe Heterojunction Thin-Film Solar Cell for High Efficiency Performance

    OpenAIRE

    Hamid Fardi; Fatima Buny

    2013-01-01

    Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS photovoltaic solar cell. The role of several limiting factors such as back contact Schottky barrier and its relationship to the doping density and layer thickness is examined. The role of surface recombination velocity at back contact interface and extended CdTe layer is included. The base CdS/CdTe experimental device used in this study shows an efficiency of 16-17%. Simulation analysis is used to ...

  17. Effect of CdCl{sub 2} treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.A. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Hossain, M.S.; Aliyu, M.M. [Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Karim, M.R. [Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia); Razykov, T.; Sopian, K. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshad@eng.ukm.my [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia)

    2013-11-01

    The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl{sub 2} solution treatment have been studied with a major focus on the influence of CdCl{sub 2} treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2 μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250 °C. Aqueous CdCl{sub 2} concentration varied from 0.3 mol to 1.2 mol with the annealing temperature from 360 °C to 450 °C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360 °C with 0.3 M to1.2 M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl{sub 2} concentration and subsequent annealing temperature. The highest carrier concentration of 1.05 × 10{sup 14}/cm{sup 3} was found for the CdTe thin films treated with 0.3 M CdCl{sub 2} solution followed by an annealing treatment at 420 °C for 20 min. - Highlights: • CdTe thin films are grown as absorption layers in CdTe solar cells by sputtering. • CdTe film quality in terms of structural and electronic properties is examined. • All growth parameters are optimized in the range of 1.5 to 2 μm CdTe films.

  18. Solar Energy Cell with Rare Earth Film

    Institute of Scientific and Technical Information of China (English)

    Li Baojun; Yang Tao; Zhou Yao; Zhou Meng; Fu Xiliang; Fu Li

    2004-01-01

    The characteristic of the solar energy cell with the rare earth film according to theory of molecular structure was introduced.When sunlight shines, the molecules of the rare earth film can absorb energy of the photon and jump to the excited state from the basic state, and play a role in storing solar energy.When sunlight do not shine, the electron of the excited state returns to the basic state, the rare earth film can automatically give out light and shine to surface of the solar cell, which can make solar cell continuously generate electric current.The rare earth film can absorb direct,scattering sunlight, and increase density of solar energy to reach surface of the solar cell, and play focusing function.The rare earth film can bear 350 ~ 500 ℃, which make the solar cell be able to utilize the focusing function system.Because after luminescence of the rare earth film, it can release again the absorbed solar energy through 1 ~ 8 h, and play a role in storing solar energy; The solar cell with the rare-earth film can generate electricity during night and cloudy days, and remarkably increase efficiency of the solar cell.

  19. Energy Conversion: Nano Solar Cell

    Science.gov (United States)

    Yahaya, Muhammad; Yap, Chi Chin; Mat Salleh, Muhamad

    2009-09-01

    Problems of fossil-fuel-induced climate change have sparked a demand for sustainable energy supply for all sectors of economy. Most laboratories continue to search for new materials and new technique to generate clean energy at affordable cost. Nanotechnology can play a major role in solving the energy problem. The prospect for solar energy using Si-based technology is not encouraging. Si photovoltaics can produce electricity at 20-30 c//kWhr with about 25% efficiency. Nanoparticles have a strong capacity to absorb light and generate more electrons for current as discovered in the recent work of organic and dye-sensitized cell. Using cheap preparation technique such as screen-printing and self-assembly growth, organic cells shows a strong potential for commercialization. Thin Films research group at National University Malaysia has been actively involved in these areas, and in this seminar, we will present a review works on nanomaterials for solar cells and particularly on hybrid organic solar cell based on ZnO nanorod arrays. The organic layer consisting of poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) and [6, 6]-phenyl C61-butyric acid 3-ethylthiophene ester (PCBE) was spin-coated on ZnO nanorod arrays. ZnO nanorod arrays were grown on FTO glass substrates which were pre-coated with ZnO nanoparticles using a low temperature chemical solution method. A gold electrode was used as the top contact. The device gave a short circuit current density of 2.49×10-4 mA/cm2 and an open circuit voltage of 0.45 V under illumination of a projector halogen light at 100 mW/cm2.

  20. Cadmium telluride (CdTe) and cadmium selenide (CdSe) leaching behavior and surface chemistry in response to pH and O2.

    Science.gov (United States)

    Zeng, Chao; Ramos-Ruiz, Adriana; Field, Jim A; Sierra-Alvarez, Reyes

    2015-05-01

    Cadmium telluride (CdTe) and cadmium selenide (CdSe) are increasingly being applied in photovoltaic solar cells and electronic components. A major concern is the public health and ecological risks associated with the potential release of toxic cadmium, tellurium, and/or selenium species. In this study, different tests were applied to investigate the leaching behavior of CdTe and CdSe in solutions simulating landfill leachate. CdTe showed a comparatively high leaching potential. In the Toxicity Characteristic Leaching Procedure (TCLP) and Waste Extraction Test (WET), the concentrations of cadmium released from CdTe were about 1500 and 260 times higher than the regulatory limit (1 mg/L). In contrast, CdSe was relatively stable and dissolved selenium in both leaching tests was below the regulatory limit (1 mg/L). Nonetheless, the regulatory limit for cadmium was exceeded by 5- to 6- fold in both tests. Experiments performed under different pH and redox conditions confirmed a marked enhancement in CdTe and CdSe dissolution both at acidic pH and under aerobic conditions. These findings are in agreement with thermodynamic predictions. Taken as a whole, the results indicate that recycling of decommissioned CdTe-containing devices is desirable to prevent the potential environmental release of toxic cadmium and tellurium in municipal landfills.

  1. Understanding the photostability of perovskite solar cell

    Science.gov (United States)

    Joshi, Pranav H.

    Global climate change and increasing energy demands have led to a greater focus on cheaper photovoltaic energy solutions. Perovskite solar cells and organic solar cells have emerged as promising technologies for alternative cheaper photovoltaics. Perovskite solar cells have shown unprecedentedly rapid improvement in power conversion efficiency, from 3% in 2009 to more than 21% today. High absorption coefficient, long diffusion lengths, low exciton binding energy, low defect density and easy of fabrication has made perovskites near ideal material for economical and efficient photovoltaics. However, stability of perovskite and organic solar cells, especially photostability is still not well understood. In this work, we study the photostability of organic solar cells and of perovskite solar cells. (Abstract shortened by ProQuest.).

  2. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  3. Device operation of organic tandem solar cells

    NARCIS (Netherlands)

    Hadipour, A.; de Boer, B.; Blom, P. W. M.

    2008-01-01

    A generalized methodology is developed to obtain the current-voltage characteristic of polymer tandem solar cells by knowing the electrical performance of both sub cells. We demonstrate that the electrical characteristics of polymer tandem solar cells are correctly predicted for both the series and

  4. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, Jiwu; Liu, Wei; Kovalgin, Alexey Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  5. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. (Georgia Inst. of Tech., Atlanta, GA (United States))

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  6. Impact of CdS annealing atmosphere on the performance of CdS–CdTe solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Maticiuc, N., E-mail: nataliamaticiuc@yahoo.com; Spalatu, N.; Mikli, V.; Hiie, J.

    2015-09-30

    Highlights: • Annealed CdS films are used for CdTe based solar cells. • CdS–CdTe solar cell with air annealed CdS shows better performance. • The air annealed CdS brings the O{sub 2} and chloride at the place of junction formation. • H{sub 2} removes the oxygen containing compounds from CdS grain boundaries. - Abstract: CdS thin films obtained by chemical bath deposition and annealed in hydrogen and air ambients were combined with CdTe absorbers obtained by close spaced sublimation. CdS–CdTe solar cells in superstrate configuration were characterized by current–voltage and quantum efficiency measurements while the analysis of annealed CdS films was made by scanning electron microscopy, X-ray diffraction and UV–vis spectroscopy. It was found that in superstrate configuration, due to the big grains on CdS surface and gas emission from CdS film at high temperature deposition of the absorber, the delamination of layers take place. Annealing in H{sub 2} removes the oxygen compounds from CdS grain boundaries and opens them for formation of shortcutting through the CdS layer. The processing in air is most advantageous due to simultaneous presence of chloride and oxygen, contributing to the recrystallization and sintering of the highly textured columnar CdS. The direct influence of the CdS annealing on the solar cell parameters is shown for CdS–CdTe solar cell.

  7. Solar Cells Using Quantum Funnels

    KAUST Repository

    Kramer, Illan J.

    2011-09-14

    Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems. © 2011 American Chemical Society.

  8. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  9. Nanostructured organic and hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Weickert, Jonas; Dunbar, Ricky B.; Hesse, Holger C.; Wiedemann, Wolfgang; Schmidt-Mende, Lukas [Department of Physics and Center for NanoScience (CeNS), Ludwig-Maximilians University (LMU) Munich, Amalienstr. 54, 80799 Munich (Germany)

    2011-04-26

    This progress report highlights recent developments in nanostructured organic and hybrid solar cells. The authors discuss novel approaches to control the film morphology in fully organic solar cells and the design of nanostructured hybrid solar cells. The motivation and recent results concerning fabrication and effects on device physics are emphasized. The aim of this review is not to give a summary of all recent results in organic and hybrid solar cells, but rather to focus on the fabrication, device physics, and light trapping properties of nanostructured organic and hybrid devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Very High Efficiency Solar Cell Modules

    Energy Technology Data Exchange (ETDEWEB)

    Barnett, A.; Kirkpatrick, D.; Honsberg, C.; Moore, D.; Wanlass, M.; Emery, K.; Schwartz, R.; Carlson, D.; Bowden, S.; Aiken, D.; Gray, A.; Kurtz, S.; Kazmerski, L., et al

    2009-01-01

    The Very High Efficiency Solar Cell (VHESC) program is developing integrated optical system - PV modules for portable applications that operate at greater than 50% efficiency. We are integrating the optical design with the solar cell design, and have entered previously unoccupied design space. Our approach is driven by proven quantitative models for the solar cell design, the optical design, and the integration of these designs. Optical systems efficiency with an optical efficiency of 93% and solar cell device results under ideal dichroic splitting optics summing to 42.7 {+-} 2.5% are described.

  11. Organic ternary solar cells: a review.

    Science.gov (United States)

    Ameri, Tayebeh; Khoram, Parisa; Min, Jie; Brabec, Christoph J

    2013-08-21

    Recently, researchers have paid a great deal of attention to the research and development of organic solar cells, leading to a breakthrough of over 10% power conversion efficiency. Though impressive, further development is required to ensure a bright industrial future for organic photovoltaics. Relatively narrow spectral overlap of organic polymer absorption bands within the solar spectrum is one of the major limitations of organic solar cells. Among different strategies that are in progress to tackle this restriction, the novel concept of ternary organic solar cells is a promising candidate to extend the absorption spectra of large bandgap polymers to the near IR region and to enhance light harvesting in single bulk-heterojunction solar cells. In this contribution, we review the recent developments in organic ternary solar cell research based on various types of sensitizers. In addition, the aspects of miscibility, morphology complexity, charge transfer dynamics as well as carrier transport in ternary organic composites are addressed.

  12. Effects of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/CdS/TCO solar cells

    Science.gov (United States)

    Niemegeers, Alex; Burgelman, Marc

    1997-03-01

    A simple analytical theory is presented to explain the measured roll over and cross over behaviour of the IV characteristics of thin film CdTe solar cells. It involves a classical description of the CdS/CdTe junction and the CdTe/back contact structure and is extended with a new description of minority carrier current in the CdTe contact region. This extension is crucial in describing the light dependence of the forward IV curves, and hence cross over. The same model also explains the measured CV curves. It is shown that analysis of the capacitance measurement can yield additional information about the doping density of CdTe in the vicinity of the contact. A relationship between the fill factor of the solar cell and the barrier height of the back contact is derived; this relation is useful as a new, practical criterion for the quality of the back contact. The results of this simple analytical model are confirmed by full numerical calculations of the dc and ac characteristics.

  13. Enhanced Cu₂S/CdS coaxial nanowire solar cells by piezo-phototronic effect.

    Science.gov (United States)

    Pan, Caofeng; Niu, Simiao; Ding, Yong; Dong, Lin; Yu, Ruomeng; Liu, Ying; Zhu, Guang; Wang, Zhong Lin

    2012-06-13

    Nanowire solar cells are promising candidates for powering nanosystems and flexible electronics. The strain in the nanowires, introduced during growth, device fabrication and/or application, is an important issue for piezoelectric semiconductor (like CdS, ZnO, and CdTe) based photovoltaic. In this work, we demonstrate the first largely enhanced performance of n-CdS/p-Cu(2)S coaxial nanowire photovoltaic (PV) devices using the piezo-phototronics effect when the PV device is subjected to an external strain. Piezo-phototronics effect could control the electron-hole pair generation, transport, separation, and/or recombination, thus enhanced the performance of the PV devices by as high as 70%. This effect offers a new concept for improving solar energy conversation efficiency by designing the orientation of the nanowires and the strain to be purposely introduced in the packaging of the solar cells. This study shed light on the enhanced flexible solar cells for applications in self-powered technology, environmental monitoring, and even defensive technology.

  14. Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1993--January 15, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.; Yokimcus, T.A. [Institute of Energy Conversion, Newark, DE (United States)

    1994-09-01

    The overall objective of the research presented in this report is to advance the development and acceptance of thin-film photovoltaic modules by increasing the understanding of film growth and processing and its relationship to materials properties and solar cell performance. The specific means toward meeting this larger goal include: (1) investigating scalable, cost-effective deposition processes; (2) preparing thin-film materials and device layers and completed cell structures; (3) performing detailed material and device analysis; and (4) participating in collaborative research efforts that address the needs of PV-manufacturers. These objectives are being pursued with CuInSe{sub 2}, CdTe and a-Si based solar cells.

  15. Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

    NARCIS (Netherlands)

    Lu, Jiwu; Kovalgin, Alexey Y.; Werf, van der Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

  16. Characterization of CdS Thin-Film in High Efficient CdS/CdTe Solar Cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-07-01

    Cadmium sulfide (CdS) thin films are the most commonly used window materials for high efficient cadmium telluride (CdTe) and chalcopyrite polycrystalline thin-film photovoltaic devices. High efficient CdS/CdTe solar cells with thin CdS films have been developed using ultrathin CdS films with a thickness of less than 0.1 μm. CdS films were deposited on transparent conductive oxide (TCO)/glass substrates by the metal organic chemical vapor deposition (MOCVD) technique. CdTe films were subsequently deposited by the close-spaced sublimation (CSS) technique. The screen printing and sintering method fabricated carbon and silver electrodes. Cell performance depends primarily on the electrical and optical properties of CdS films. Therefore we started to develop higher-quality CdS films and found clear differences between high- and low-quality CdS films from the analyses of scanning electron microscope (SEM), atomic force microscope (AFM), secondary ion mass spectroscopy (SIMS), thermal desorption spectrometry (TDS) and Fourier transforms-infrared spectrometry (FT-IR) measurements. As a result of controlling the quality of CdS films, a photovoltaic conversion efficiency of 10.5% has been achieved for size of 1376 cm2 of the solar cells under the Air Mass (AM) 1.5 conditions of the Japan Quality Assurance Organization.

  17. Conductive Atomic Force Microscopy Applied to CdTe/CdS Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C. -S.; Al-Jassim, M. M.; Kazmerski, L. L.

    2004-08-01

    In this work we describe for the first time the use of conductive atomic force microscopy (C-AFM) in the study of CdTe/CdS solar cells, before and after the etching processes used in device fabrication. C-AFM is a new technique that provides information on the electrical properties of the sample in conjunction with topographic images with high lateral resolution. At the same time, this technique allows for the generation of I-V curves at very well-defined locations. A potential is applied between the sample and a very sharp tip, which scans the sample in contact mode. The current images showed that different CdTe grains produce different contrast. Etching the CdTe with a bromine/methanol solution enhanced the current along grains boundaries when compared to the intragrain material. Etching with a solution of nitric and phosphoric acids did not show this effect. Instead, it increased the current through the whole sample surface.

  18. Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells.

    Science.gov (United States)

    Lang, Felix; Gluba, Marc A; Albrecht, Steve; Rappich, Jörg; Korte, Lars; Rech, Bernd; Nickel, Norbert H

    2015-07-16

    Perovskite solar cells with transparent contacts may be used to compensate for thermalization losses of silicon solar cells in tandem devices. This offers a way to outreach stagnating efficiencies. However, perovskite top cells in tandem structures require contact layers with high electrical conductivity and optimal transparency. We address this challenge by implementing large-area graphene grown by chemical vapor deposition as a highly transparent electrode in perovskite solar cells, leading to identical charge collection efficiencies. Electrical performance of solar cells with a graphene-based contact reached those of solar cells with standard gold contacts. The optical transmission by far exceeds that of reference devices and amounts to 64.3% below the perovskite band gap. Finally, we demonstrate a four-terminal tandem device combining a high band gap graphene-contacted perovskite top solar cell (Eg = 1.6 eV) with an amorphous/crystalline silicon bottom solar cell (Eg = 1.12 eV).

  19. Design of a Pneumatic Robotic Arm for Solar Cell Tester System By using PLC controller

    Directory of Open Access Journals (Sweden)

    Yousif I. Al Mashhadany

    2013-01-01

    Full Text Available Solar cell testers sort photovoltaic cells according to their electrical performance, tested under simulated sunlight. A variety of testers exist, but they all face a common challenge of handling cells that are very small and thin, which makes it difficult to transport the cells from the conveyer to the storage box. This paper presents a new design for a handling robot with vacuum end-effectors, which uses a PLC controller to govern the movement of the cells and the testing process. The design applies to solar cell testers for monocrystalline, polycrystalline, cadmium telluride (CdTe, and copper indium diselenide (CIS cells. Each cell is tested for efficiency and categorized accordingly into four groups (A to D. A Virtual Reality (VR model was built to simulate the system, keeping in mind real world constraints. Two photoelectric sensors were used to make detections for both the testing process and the robot movement. The PLC controller guides the trajectory of the robot according to the results of the efficiency testing. It was seen that the system worked very well, with the testing process and the robot movement interacting smoothly. The robot trajectory was seen to be highly accurate, and the pick and place operations were done with great precision.

  20. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  1. Monolithic cells for solar fuels.

    Science.gov (United States)

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-07

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  2. Infrared-Controlled Welding of Solar Cells

    Science.gov (United States)

    Paulson, R.; Finnell, S. E.; Decker, H. J.; Hodor, J. R.

    1982-01-01

    Proposed apparatus for welding large arrays of solar cells to flexible circuit substrates would sense infrared emission from welding spot. Emission would provide feedback for control of welding heat. Welding platform containing optical fibers moves upward through slots in movable holding fixture to contact solar cells. Fibers pick up infrared radiation from weld area.

  3. Perovskite solar cells: Different facets of performance

    Science.gov (United States)

    Eperon, Giles E.; Ginger, David S.

    2016-08-01

    The electronic properties of halide perovskites vary significantly between crystalline grains, but the impact of this heterogeneity on solar cell performance is unclear. Now, this variability is shown to limit the photovoltaic properties of solar cells, and its origins are linked to differing properties between crystal facets.

  4. Perovskite solar cells: an emerging photovoltaic technology

    Directory of Open Access Journals (Sweden)

    Nam-Gyu Park

    2015-03-01

    Full Text Available Perovskite solar cells based on organometal halides represent an emerging photovoltaic technology. Perovskite solar cells stem from dye-sensitized solar cells. In a liquid-based dye-sensitized solar cell structure, the adsorption of methylammonium lead halide perovskite on a nanocrystalline TiO2 surface produces a photocurrent with a power conversion efficiency (PCE of around 3–4%, as first discovered in 2009. The PCE was doubled after 2 years by optimizing the perovskite coating conditions. However, the liquid-based perovskite solar cell receives little attention because of its stability issues, including instant dissolution of the perovskite in a liquid electrolyte. A long-term, stable, and high efficiency (∼10% perovskite solar cell was developed in 2012 by substituting the solid hole conductor with a liquid electrolyte. Efficiencies have quickly risen to 18% in just 2 years. Since PCE values over 20% are realistically anticipated with the use of cheap organometal halide perovskite materials, perovskite solar cells are a promising photovoltaic technology. In this review, the opto-electronic properties of perovskite materials and recent progresses in perovskite solar cells are described. In addition, comments on the issues to current and future challenges are mentioned.

  5. Fullerene surfactants and their use in polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jen, Kwan-Yue; Yip, Hin-Lap; Li, Chang-Zhi

    2015-12-15

    Fullerene surfactant compounds useful as interfacial layer in polymer solar cells to enhance solar cell efficiency. Polymer solar cell including a fullerene surfactant-containing interfacial layer intermediate cathode and active layer.

  6. Multi-Material Front Contact for 19% Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Joop van Deelen

    2016-02-01

    Full Text Available The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,GaSe2 (CIGS, CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

  7. Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Han, Junfeng [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng, E-mail: Cliao@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Jiang, Tao [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Fu, Ganhua; Krishnakumar, V.; Spanheimer, C.; Haindl, G. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Zhao, Kui [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Klein, A.; Jaegermann, W. [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany)

    2011-02-15

    Graphical abstract: From XPS core level spectras, compared with as-depositing CdS (sample A), the Fermi level is shifting closer to the conduction band after annealing treatment in the oxygen (sample B) while it is shifting closer to the valence band after annealing treatment in the argon-hydrogen (sample C). That might be the main reason of the different performance of the final devices. The open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen, while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Research highlights: {yields} Two different methods (oxidation and reduction) were used to anneal CdS films for CdTe solar cells. {yields} Electrical properties were analyzed by XPS (Fermi levels of CdS films). {yields} Annealing treatment in oxidation atmosphere could shift Fermi level of CdS film to higher position and consequently improve the CdS/CdTe junction and performance of solar cells. -- Abstract: CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.

  8. Methodologies for high efficiency perovskite solar cells

    Science.gov (United States)

    Park, Nam-Gyu

    2016-06-01

    Since the report on long-term durable solid-state perovskite solar cell in 2012, perovskite solar cells based on lead halide perovskites having organic cations such as methylammonium CH3NH3PbI3 or formamidinium HC(NH2)2PbI3 have received great attention because of superb photovoltaic performance with power conversion efficiency exceeding 22 %. In this review, emergence of perovskite solar cell is briefly introduced. Since understanding fundamentals of light absorbers is directly related to their photovoltaic performance, opto-electronic properties of organo lead halide perovskites are investigated in order to provide insight into design of higher efficiency perovskite solar cells. Since the conversion efficiency of perovskite solar cell is found to depend significantly on perovskite film quality, methodologies for fabricating high quality perovskite films are particularly emphasized, including various solution-processes and vacuum deposition method.

  9. High Radiation Resistance IMM Solar Cell

    Science.gov (United States)

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  10. Methodologies for high efficiency perovskite solar cells.

    Science.gov (United States)

    Park, Nam-Gyu

    2016-01-01

    Since the report on long-term durable solid-state perovskite solar cell in 2012, perovskite solar cells based on lead halide perovskites having organic cations such as methylammonium CH3NH3PbI3 or formamidinium HC(NH2)2PbI3 have received great attention because of superb photovoltaic performance with power conversion efficiency exceeding 22 %. In this review, emergence of perovskite solar cell is briefly introduced. Since understanding fundamentals of light absorbers is directly related to their photovoltaic performance, opto-electronic properties of organo lead halide perovskites are investigated in order to provide insight into design of higher efficiency perovskite solar cells. Since the conversion efficiency of perovskite solar cell is found to depend significantly on perovskite film quality, methodologies for fabricating high quality perovskite films are particularly emphasized, including various solution-processes and vacuum deposition method.

  11. Nanowire-based All Oxide Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

    2008-12-07

    We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

  12. Coating Processes Boost Performance of Solar Cells

    Science.gov (United States)

    2012-01-01

    NASA currently has spacecraft orbiting Mercury (MESSENGER), imaging the asteroid Vesta (Dawn), roaming the red plains of Mars (the Opportunity rover), and providing a laboratory for humans to advance scientific research in space (the International Space Station, or ISS). The heart of the technology that powers those missions and many others can be held in the palm of your hand - the solar cell. Solar, or photovoltaic (PV), cells are what make up the panels and arrays that draw on the Sun s light to generate electricity for everything from the Hubble Space Telescope s imaging equipment to the life support systems for the ISS. To enable NASA spacecraft to utilize the Sun s energy for exploring destinations as distant as Jupiter, the Agency has invested significant research into improving solar cell design and efficiency. Glenn Research Center has been a national leader in advancing PV technology. The Center s Photovoltaic and Power Technologies Branch has conducted numerous experiments aimed at developing lighter, more efficient solar cells that are less expensive to manufacture. Initiatives like the Forward Technology Solar Cell Experiments I and II in which PV cells developed by NASA and private industry were mounted outside the ISS have tested how various solar technologies perform in the harsh conditions of space. While NASA seeks to improve solar cells for space applications, the results are returning to Earth to benefit the solar energy industry.

  13. Superior light trapping in thin film silicon solar cells through nano imprint lithography

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W.J.; Dorenkamper, M.S.; Schropp, R.E.I.; Pex, P.P.A.C.

    2013-10-15

    ECN and partners have developed a fabrication process based on nanoimprint lithography (NIL) of textures for light trapping in thin film solar cells such as thin-film silicon, OPV, CIGS and CdTe. The process can be applied in roll-to-roll mode when using a foil substrate or in roll-to-plate mode when using a glass substrate. The lacquer also serves as an electrically insulating layer for cells if steel foil is used as substrate, to enable monolithic series interconnection. In this paper we will show the superior light trapping in thin film silicon solar cells made on steel foil with nanotextured back contacts. We have made single junction a-Si and {mu}c-Si and a-Si/{mu}c-Si tandem cells, where we applied several types of nano-imprints with random and periodic structures. We will show that the nano-imprinted back contact enables more than 30% increase of current in comparison with non-textured back contacts and that optimized periodic textures outperform state-of-the-art random textures. For a-Si cells we obtained Jsc of 18 mA/cm{sup 2} and for {mu}c-Si cells more than 24 mA/cm{sup 2}. Tandem cells with a total Si absorber layer thickness of only 1350 nm have an initial efficiency of 11%.

  14. Characterization of CdS thin film in high efficient CdS/CdTe solar cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-06-01

    Cadmium sulfide (CdS) thin film is the most commonly used window material for high-efficient cadmium telluride (CdTe) thin-film photovoltaic devices. High-efficient CdS/CdTe solar cells have been developed using ultra-thin CdS films having a thickness of below 0.1 μm. CdS film is deposited on transparent conductive oxide (TCO) film coated glass substrates by the metal organic chemical vapor deposition (MOCVD) technique, CdTe film is subsequently deposited by the close-spaced sublimation (CSS) technique. Finally, carbon and Ag-In electrodes are fabricated by the screen printing and sintering method. Cell performance depends primarily on the electrical and optical properties of CdS film, and hence we started to develop higher quality CdS film and found out clear differences between high- and low-quality CdS films from various analyses: SEM, AFM, SIMS, TDS and FT-IR. As a result of controlling qualities of CdS films, photovoltaic conversion efficiency of 10.5% has been achieved for a size of 1376 cm 2 of the solar module under air mass (AM) 1.5 conditions by the Japan Quality Assurance Organization (JQA).

  15. Planar multijunction high voltage solar cells

    Science.gov (United States)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

    1980-01-01

    Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

  16. Inorganic benchmarks for organic solar cells: considerations of efficiency, stability, and cost

    Science.gov (United States)

    Faiman, David

    2002-02-01

    The paper reviews first, the recent history of commercial thin film photovoltaic modules in terms of measurements we have performed on their true AM1.5 efficiency (under natural sunlight), and their observed long-term stability properties. Attention is focused on the first generation of single-junction amorphous silicon (a-Si) modules that became available during the 1980s, and we compare their performance with those of late-1990s models fabricated with multi-junction a-Si, CdTe and CuInSe2 thin films. The efficiency and stability of these modules are compared with corresponding measurements we have performed on the high-efficiency organic solar cells that were recently produced at the Johannes Keppler University of Linz. Finally, we review the economics of grid-connected PV systems in order to provide cost benchmarks for future organic competitors.

  17. Dye-sensitized Solar Cells for Solar Energy Harvesting

    Science.gov (United States)

    Roy, M. S.; Deol, Y. S.; Kumar, Manish; Prasad, Narottam; Janu, Yojana

    2011-10-01

    Dye-sensitized solar cells (DSSCs) also known as Gratzel cells, have attracted the interests of researchers to a great extent because of its cost effective and easy manufacturing process without involving highly sophisticated lithographic technique and high cost raw materials as usually seen in conventional solar cell. Based on simple photo-electrochemical process, it has got immense potential in converting solar energy to electrical power in remote and desert area where the supply of conventional power is not possible. The overall peak power-production efficiency of dye-sensitized solar cells has been reported around 11 percent, so they are best suited to low-density applications and the price-to-performance ratio obtained through these solar cells is superior to others. DSSCs have ability to absorb even diffused sunlight and therefore work in cloudy whether as well without much impact over the efficiency. The present communication deals with a review of our work on DSSCs wherein we have used cost effective natural dyes/pigments as a sensitizer of nc-TiO2 and discussed about various key factors affecting the conversion efficiency of DSSC.

  18. Tandem photovoltaic solar cells and increased solar energy conversion efficiency

    Science.gov (United States)

    Loferski, J. J.

    1976-01-01

    Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.

  19. Solar Cell Panel and the Method for Manufacturing the Same

    Science.gov (United States)

    Richards, Benjamin C. (Inventor); Sarver, Charles F. (Inventor); Naidenkova, Maria (Inventor)

    2016-01-01

    According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell panel comprises: a solar cell for generating electric power from sunlight; a coverglass for covering the solar cell; transparent shims, which are disposed between the solar cell and the coverglass at the points where the distance between the solar cell and the coverglass needs to be controlled, and form a space between the solar cell and the coverglass; and adhesive layer, which fills the space between the solar cell and the coverglass and has the thickness the same as that of the transparent shims.

  20. Modeling the defect distribution and degradation of CdTe ultrathin films

    Science.gov (United States)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  1. Optical absorption enhancement of CdTe nanostructures by low-energy nitrogen ion bombardment

    Science.gov (United States)

    Akbarnejad, E.; Ghoranneviss, M.; Mohajerzadeh, S.; Hantehzadeh, M. R.; Asl Soleimani, E.

    2016-02-01

    In this paper we present the fabrication of cadmium telluride (CdTe) nanostructures by means of RF magnetron sputtering followed by low-energy ion implantation and post-thermal treatment. We have thoroughly studied the structural, optical, and morphological properties of these nanostructures. The effects of nitrogen ion bombardment on the structural parameters of CdTe nanostructures such as crystal size, microstrain, and dislocation density have been examined. From x-ray diffractometer (XRD) analysis it could be deduced that N+ ion fluence and annealing treatment helps to form (3 0 0) orientation in the crystalline structure of cadmium-telluride films. Fluctuations in optical properties like the optical band gap and absorption coefficient as a function of N+ ion fluences have been observed. The annealing of the sample irradiated by a dose of 1018 ions cm-2 has led to great enhancement in the optical absorption over a wide range of wavelengths with a thickness of 250 nm. The enhanced absorption is significantly higher than the observed value in the original CdTe layer with a thickness of 3 μm. Surface properties such as structure, grain size and roughness are noticeably affected by varying the nitrogen fluences. It is speculated that nitrogen bombardment and post-annealing treatment results in a smaller optical band gap, which in turn leads to higher absorption. Nitrogen bombardment is found to be a promising method to increase efficiency of thin film solar cells.

  2. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Science.gov (United States)

    Moseley, John; Al-Jassim, Mowafak M.; Guthrey, Harvey L.; Burst, James M.; Duenow, Joel N.; Ahrenkiel, Richard K.; Metzger, Wyatt K.

    2016-09-01

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  3. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Guthrey, Harvey L. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Burst, James M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Duenow, Joel N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Ahrenkiel, Richard K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

    2016-09-09

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  4. ``CuInSe2 and CdTe thin films for photovoltaic applications''

    Science.gov (United States)

    Attar, G.; Bhethanobolta, D. P.; Dugan, K.; Karthikeyan, S.; Kazi, M.; Killian, J. L.; Muthaiah, A. B.; Nierman, D.; Oman, D. M.; Swaminathan, R.; Zafar, S. A.; Ferekides, C. S.; Morel, D. L.

    1994-06-01

    We are developing processing techniques for CuInSe2 that are manufacturing-friendly due to relaxed controls on deposition conditions. We routinely achieve Jsc's in the range 35-45+ mA/cm2, FF's of 0.55-0.63, and have recently achieved 410 mV in devices without advanced Ga alloying techniques. Our progress and analysis suggests that these processing techniques can achieve state-of-the-art efficiencies. We are also developing an understanding of the complex underlying device mechanisms and their correlation to processing. We propose that a multi-junction classical model which includes space charge recombination can adequately explain device performance and help guide development efforts. The effect of the substrate temperature on the performance of CdTe solar cells prepared by the close spaced sublimation (CSS) process is being investigated. Significant progress has been made and the maximum open-circuit voltage, short-circuit current, and fill factor obtained are 840-860 mV, 22+ mA/cm2, and 69-70% respectively. The extend of interface reaction between the CdTe and CdS layers appears to be dependent on the substrate temperature. Other process parameters such as the total pressure and spacing are of equal importance in obtaining dense CdTe films. Stability studies are also underway in order to determine whether any degradation mechanisms exist and identify their origins.

  5. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  6. Recent Advancements and Techniques in Manufacture of Solar Cells: Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    B. Naga Venkata Sai Ganesh,

    2013-03-01

    Full Text Available The major problem faced by the society is power crisis. All the non-renewable resources like fossil fuelsnecessary for producing power are being used excessively, which might result a day in future where, the world might godark due to lack of power producing resources. Usage of renewable resources like solar energy can be a solution to thisproblem. Solar cells invented to overcome this problem show rigidity in their structure which is a drawback. Inorganicsolar cells are rigid and can be mounted only on rooftops. Hence only upper surface of buildings are utilized. In this paperwe bring out a new era or solar cells- organic solar cells, which are flexible. These organic solar cells offer the bestsolution for the above problem for a tradeoff of efficiency. This paper briefs the manufacturing technique of solar cellsfrom plastic i.e. ,organic polymers, their architecture, the working process of solar energy production from the organicsolar cells with their ease of usage

  7. Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

    Science.gov (United States)

    Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

    2016-05-01

    At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  8. Recent Advances in Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Thomas Kietzke

    2007-01-01

    Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

  9. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Menna, P.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Laboratory, Golden, CO (United States)

    1996-06-10

    We used a 10-kW, high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. We found that all of these HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. We also used the HFSF to crystallize a-Si:H thin films on glass, to texture crystalline silicon surfaces, to deposit gold contacts on silicon wafers, and to getter impurities from metallurgical grade silicon. HFSF processing offers several advantages over conventional furnace processing: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. We conclude that HFSF processing of silicon solar cells has the potential to improve cell efficiency, reduce cell fabrication costs, and also be an environmentally friendly manufacturing method. We have also demonstrated that the HFSF can be used to achieve solid-phase crystallization of a-Si:H at very high speed

  10. Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells

    Science.gov (United States)

    Marinskiy, Dmitriy Nikolaevich

    1998-12-01

    One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga)Sesb2 solar cells. The study of the optical and structural properties of CdS films deposited by close spaced sublimation as well as their influence on CdS/CdTe solar cell performance is part of the CdTe solar cell program at the University of South Florida. CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in Hsb2 ambient, in CdClsb2 atmosphere, and in atmosphere with small amounts of oxygen. A special annealing chamber was built to carry out the annealing experiments in the presence of CdClsb2 vapor and oxygen. Several CSS chambers were assembled to study the influence of various process parameters simultaneously and validate the results. Results of scanning electron microscopy and photoluminescence measurements have been used as the primary characterization techniques. X-ray diffraction, electron microprobe analysis, and transmission measurements have also been carried out. It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance. CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have

  11. Industrial n-type solar cells with >20% cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

    2013-03-15

    To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

  12. Spectral response of CdS/CdTe solar cells obtained with different S/Cd ratios for the CdS chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O.; Sastre-Hernandez, J.; Contreras-Puente, G.; Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D. F. (Mexico); Arias-Carbajal, A. [Facultad de Quimica, IMRE, Universidad de La Habana, 10400 La Habana (Cuba); Mendoza-Perez, R. [Universidad Autonoma de la Ciudad de Mexico, 09970 Mexico, D. F. (Mexico); Santana, G. [Instituto de Investigacion en Materiales, UNAM, 04510 Mexico, D. F. (Mexico); Morales-Acevedo, A. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, 07360 Mexico, D. F. (Mexico)

    2006-09-22

    In this work, the influence of the variation of chemical bath thiourea concentration in the solution for depositing CdS layers upon the spectral response of chemical bath deposition (CBD)-CdS/CdTe solar cells is studied. Although changes in the short and long wavelength range for the spectral response of the cells were observed in dependence of the thiourea concentration, no significant changes were observed in the diffusion length of minority carriers in the CdTe layer, as determined from the constant photocurrent method, when the thiourea concentration is increased in the CdS deposition solution. (author)

  13. Nondestructive Investigation of Heterojunction Interfacial Properties Using Two-Wavelength Raman Spectroscopy on Thin-Film CdS/CdTe Solar Cells.

    Science.gov (United States)

    Zeng, Guanggen; Harrison, Paul; Kidman, Ali; Al-Mebir, Alaa; Feng, Lianghuan; Wu, Judy

    2016-09-01

    Raman spectra specific to CdS and CdTe were obtained on the CdS/CdTe heterojunction interface by employing two excitation wavelengths of λ1 = 488 nm and λ2 = 633 nm, respectively, from the glass side of Glass/FTO/CdS/CdTe/HgTe:Cu:graphite/Ag solar cells fabricated using pulsed-laser deposition (PLD). This two-wavelength Raman spectroscopy approach, with one wavelength selected below the absorption edge of the window layer (λ2 in this case), allows nondestructive characterization of the CdS/CdTe heterojunction and therefore correlation of the interfacial properties with the solar cell performance. In this study, the evolution of the interfacial strain relaxation during cell fabrication process was found to be affected not only by the inter-diffusion of S and Te corresponding to the formation of CdSxTe1-x ternary alloy with a various x from ∼0.01 to ∼0.067, but also by the variation in misfit dislocations (MDs) at CdS/CdTe interface from Raman TO/LO ratio ∼2.85 for as-deposited sample to TO/LO ∼4.44 for the cells post treatment. This is consistent with the change of the Urbach energy from 0.03 eV to 0.09 eV, indicative of the deterioration of crystalline quality of CdTe at interface although improved CdTe crystalline quality was observed away from the interface after the CdCl2 annealing. This difference crucially impacted on the rectification characteristics of the CdS/CdTe heterojunction and therefore the solar cell performance.

  14. Back-Contact Vertical-Junction Solar Cell

    Science.gov (United States)

    1988-03-01

    Without this process, 11-28 5C AM’ 5 S 300 InP GaAs 40 CdTe Ge A~ 30 C=(OOO Cu2 C z Li0 Li. C= GaP L1_u20 CdS * 10- 0 12 3 Eg (eV) Figure 2-11. Ideal solar...equations [19:386-388]: Cs(t) = S/(7rDt) 1 / 2 cm - 3 (43) and S = 2(Dt/77)’/ 2 Css cm - 2 (44) where Cs(t) is the surface impurity concentration at t, Cas

  15. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  16. Impact of back-contact materials on performance and stability of cadmium sulfide/cadmium telluride solar cells

    Science.gov (United States)

    Demtsu, Samuel H.

    Thin-film CdTe based solar cells are one of the leading contenders for providing lowcost and pollution-free energy, The formation of a stable, low resistance, non-rectifying contact to p-CdTe thin-film is one of the major and critical challenges associated with this technology in the fabrication of efficient and stable solar cells. The premise of this thesis is a systematic study of the impact of back-contact materials on the initial performance and the degradation of CdS/CdTe solar cells. Two different back-contact structures that incorporate Cu as a key element are investigated in this study: (a) Cu1.4Te:HgTe-doped graphite and (b) evaporated-Cu back contacts. The effect of Cu inclusion is not limited to the back-contact layer where it is deposited. Cu is a known fast diffuser in p-CdTe, and therefore, a significant amount of Cu reaches both the CdTe and US layers. Hence, the effect of the presence of Cu on the individual layers: back-contact, the absorber (CdTe), and the window (CdS) layers is discussed respectively. The effect of different metals used to form the current-carrying electrode following the Cu layer is also evaluated. Devices are studied through current-voltage (JV) measurements at different temperatures and intensities, quantum efficiency (QE) measurements under light and voltage bias, capacitance-voltage (CV), drive-level-capacitance-profiling (DLCP), and time-resolved photoluminescence (TRPL) measurements. Numerical simulation is also used to reproduce and explain some of the experimental results. In devices made without Cu, a current-limiting effect, rollover (distortion) in the current-voltage characteristic, was observed. With the inclusion of a small amount of Cu (5-nm), however, the distortion disappeared, and higher FF was obtained. The performance of these devices was comparable to devices made with the standard Cu-doped graphite paste contacts when the same CdTe absorber is used. Small amount of Cu (5-20 nm) partially diffused into the

  17. Scaling Up ITO-free solar cells

    DEFF Research Database (Denmark)

    Galagan, Yulia; Coenen, Erica W. C.; Zimmermann, Birger

    2014-01-01

    Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm...... resistances. The performance of ITO-free organic solar cells with different dimensions and different electrode resistances are evaluated for different light intensities. The current generation and electric potential distribution are found to not be uniformly distributed in large-area devices at simulated 1...

  18. Development of Nanoparticle Sensitized Solar Cells

    OpenAIRE

    2013-01-01

    In this thesis, I have been working with the development of nanoparticle sensitized solar cells. In the subarea of quantum dot sensitized solar cells (QDSCs), I have investigated type-II quantum dots (QDs), quantum rods (QRs) and alloy QDs, and developed novel redox couples as electrolytes. I have also proposed upconversion nanoparticles as energy relay materials for dye-sensitized solar cells (DSCs). Colloidal ZnSe/CdS type-II QDs were applied for QDSCs for the first time. The interesting fe...

  19. Photoelectrochemical Solar Cells Based on Chitosan Electroylte

    Institute of Scientific and Technical Information of China (English)

    M.H.A.Buraidah; A.K.Arof

    2007-01-01

    1 Results ITO-ZnTe/Chitosan-NH4I-I2/ITO photoelectrochemical solar cells have been fabricated and characterized by current-voltage characteristics.In this work,the ZnTe thin film was prepared by electrodeposition on indium-tin-oxide coated glass.The chitosan electrolyte consists of NH4I salt and iodine.Iodine was added to provide the I3-/I- redox couple.The PEC solar cell was fabricated by sandwiching an electrolyte film between the ZnTe semiconductor and ITO conducting glass.The area of the solar cell...

  20. Recent Advances in Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Umer Mehmood

    2014-01-01

    Full Text Available Solar energy is an abundant and accessible source of renewable energy available on earth, and many types of photovoltaic (PV devices like organic, inorganic, and hybrid cells have been developed to harness the energy. PV cells directly convert solar radiation into electricity without affecting the environment. Although silicon based solar cells (inorganic cells are widely used because of their high efficiency, they are rigid and manufacturing costs are high. Researchers have focused on organic solar cells to overcome these disadvantages. DSSCs comprise a sensitized semiconductor (photoelectrode and a catalytic electrode (counter electrode with an electrolyte sandwiched between them and their efficiency depends on many factors. The maximum electrical conversion efficiency of DSSCs attained so far is 11.1%, which is still low for commercial applications. This review examines the working principle, factors affecting the efficiency, and key challenges facing DSSCs.

  1. Development and Prospect of Nanoarchitectured Solar Cells

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2015-01-01

    Full Text Available This paper gives an overview of the development and prospect of nanotechnologies utilized in the solar cell applications. Even though it is not clearly pointed out, nanostructures indeed have been used in the fabrication of conventional solar cells for a long time. However, in those circumstances, only very limited benefits of nanostructures have been used to improve cell performance. During the last decade, the development of the photovoltaic device theory and nanofabrication technology enables studies of more complex nanostructured solar cells with higher conversion efficiency and lower production cost. The fundamental principles and important features of these advanced solar cell designs are systematically reviewed and summarized in this paper, with a focus on the function and role of nanostructures and the key factors affecting device performance. Among various nanostructures, special attention is given to those relying on quantum effect.

  2. Optical models for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, T.; Sopori, B. [National Renewable Energy Lab., Golden, CO (United States)

    1995-08-01

    Light trapping is an important design feature for high-efficiency silicon solar cells. Because light trapping can considerably enhance optical absorption, a thinner substrate can be used which, in turn, can lower the bulk carrier recombination and concommitantly increase open-circuit voltage, and fill factor of the cell. The basic concepts of light trapping are similar to that of excitation of an optical waveguide, where a prism or a grating structure increases the phase velocity of the incoming optical wave such that waves propagated within the waveguide are totally reflected at the interfaces. Unfortunately, these concepts break down because the entire solar cell is covered with such a structure, making it necessary to develop new analytical approaches to deal with incomplete light trapping in solar cells. This paper describes two models that analyze light trapping in thick and thin solar cells.

  3. MoSe2 / Polyaniline Solar Cells

    Directory of Open Access Journals (Sweden)

    H.S. Patel

    2011-01-01

    Full Text Available Solar cells have been investigated since long for harnessing the solar energy. During this decade, a new direction has come up where in the polymers have been used in the fabrication of solar cells. Polyaniline is one of the polymers which has shown potential for its applications in heterostructure solar cells. This material is being used along with the semiconductors like InSe, TiO2, Si etc. to form the photosensitive interface. In this direction, we report our investigations on the use of Molybdenum diselenide (MoSe2 as photosensitive semiconducting material in MoSe2 / polyaniline solar cells. In this paper, the preparation of MoSe2 / polyaniline solar cells has been reported. Also, the photovoltage → photocurrent characteristics of this structure have been discussed in detail in this paper. The variation of different parameters of MoSe2 / polyaniline solar cells (like open circuit voltage, short circuit current, photoconversion efficiency and fill factor with the intensity of incident illuminations has been reported in this paper. In present case, the photocurrent density was found to be around 250 µA/cm2 with the photovoltage around 8.5 mV (which is low the photoconversion efficiency was found to be around 0.7 % along with the fill factor around 0.33. The efforts have been made to explain the low values of the photoconversion efficiency.

  4. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Lab., Golden, CO (United States)

    1994-12-31

    The authors used a 10-kW high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. They found that all of the HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. HFSF processing offers several advantages that may contribute to improved solar cell efficiency: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. The HFSF has also been successfully used to texture the surface of silicon wafers and to crystallize a-Si:H thin films on glass.

  5. The combined influence of surface modification, size distribution, and interaction time on the cytotoxicity of CdTe quantum dots in PANC-1 cells

    Institute of Scientific and Technical Information of China (English)

    Shuquan Chang; Bin Kang; Xiqin Liu; Yaodong Dai; Da Chen

    2012-01-01

    Mercaptopropionic acid (MPA) and cysteamine (Cys) capped CdTe quantum dots (QDs) were successfully prepared and used to investigate the combined influence of surface modification,size distribution,and interaction time on their cytotoxicity in human pancreatic carcinoma (PANC-1) cells.Results indicated that the smaller the size of MPA-CdTe QDs,the higher the cytotoxicity,which could be partly due to the difference of their distribution inside cells.Comparing with MPA-CdTe QDs,Cys-CdTe QDs had better cellular metabolizability and lower cytotoxicity.These QDs' cellular distribution and cytotoxicity were closely related to their interaction time with cells.Their cytotoxicity was found to be significantly enhanced with the increase of incubation time in medium.After QD treatments,the influence of recover time on the final cell viability was also dependent on the concentration and surface modification of QDs used in pretreatment.The combined influence of these factors discussed here might provide useful information for understanding and reducing the cytotoxicity of QDs in future biomedical applications.

  6. EE&RE, Session: CdTe - Progress and Roadmap Alignment (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T.

    2008-04-01

    This project supports the Solar America Initiative by: (1) assistance to SAI Incubators (Primestar Solar, AvA Solar); (2) providing industry with baseline understanding of CdS/CdTe device formation and reliability--incorporation of low-cost, high quality TCOs, functionality and options for buffer layers, effect of various CdS options, effect of and importance CdSTe alloy formation, effect and options for CdCl{sub 2} treatment, effect and options for back contact, and effect of residual impurities during all stages of device formation; (3) understanding modes and mechanisms of cell-level stability; and (4) establishment of CdTe PDIL Tool for rapid material and process screening.

  7. Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

    1995-06-01

    This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

  8. Design and Optimization of Copper Indium Gallium Selenide Solar Cells for Lightweight Battlefield Application

    Science.gov (United States)

    2014-06-01

    those of the author and do not reflect the official policy or position of the Department of Defense or the U.S. Government. IRB Protocol number ____N...Matrix Flatpanel Displays and Devices, Kyoto , Japan, 2012, pp. 67–70. [23] R. Yang, Z. Bai, D. Wang, and D. Wang, “High efficient thin film CdTe solar

  9. Multijunction Solar Cells Optimized for the Mars Surface Solar Spectrum

    Science.gov (United States)

    Edmondson, Kenneth M.; Fetzer, Chris; Karam, Nasser H.; Stella, Paul; Mardesich, Nick; Mueller, Robert

    2007-01-01

    This paper gives an update on the performance of the Mars Exploration Rovers (MER) which have been continually performing for more than 3 years beyond their original 90-day missions. The paper also gives the latest results on the optimization of a multijunction solar cell that is optimized to give more power on the surface of Mars.

  10. High Efficiency, Deployable Solar Cells Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Ultrathin, lightweight, flexible, and easily deployable solar cell (SC) capable of specific power greater than 1kW/kg are at an early stage of development for...

  11. Solar-cell testing and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Stefanakos, E.K.; Collis, W.J.

    1982-04-01

    A two year study of the degradation effects in AlGaAs/GaAs solar cells is described. Illuminated current-voltage measurements were made during temperature and humidity cycling and time dependent degradation measurements were recorded.

  12. Black Silicon Solar Cells with Black Ribbons

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io;

    2016-01-01

    We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....

  13. A space solar cell bonding robot

    Institute of Scientific and Technical Information of China (English)

    FU Zhuang; ZHAO Yan-zheng; LIU Ren-qiang; DONG Zhi

    2006-01-01

    A space solar cell bonding robot system which consists of a three-axis Cartesian coordinate's robot,coating device,bonding device,orientation plate,and control subsystem was studied.A method,which can control the thickness of adhesive layer on the solar cell,was put forward and the mechanism was designed.Another method which can achieve the auto-bonding between thin coverglass and the space solar cell was studied and realized.It produced no air bubble in the adhesives layer under the condition of no vacuum environment,and ensures the assembly dislocation ≤0.1 mm.Compared to the conventional method,it has advantages such as no fragment exists,and no adhesives outflow onto the cover-glass and solar cells.

  14. Heavily doped polysilicon-contact solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.; Arienzo, M.; Iles, P. A.

    1985-01-01

    The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

  15. Multijunction Ultralight Solar Cells and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — There is a continuing need within NASA for solar cells and arrays with very high specific power densities (1000-5000 kW/kg) for generating power in a new generation...

  16. Application of Copper Indium Gallium Diselenide Photovoltaic Cells to Extend the Endurance and Capabilities of Unmanned Aerial Vehicles

    Science.gov (United States)

    2009-09-01

    gallium diselenide (CIGS, Cu(In1-xGax)Se2), cadmium telluride ( CdTe ), and amorphous silicon (a- Si). There are other thin - film technologies that... CdTe (10.8), and a-Si (8.5) [70]. Table 3. Maximum Recorded Efficiencies for Thin - Film Solar Cells (From [71]). As shown in Figure 51, the... thin - film cells, and compared each of three TFSC to each other: a-Si, CdTe , and CIGS. After further review of some of the advantages and

  17. Efficiency Enhancement in Plasmonic IBC Solar Cells

    OpenAIRE

    Christian Chaverri-Ramos; J. Ayúcar; L. Bellières; Guillermo Sánchez Plaza; James Connolly

    2012-01-01

    Silicon solar cells dominate photovoltaics but suffer from poor interaction with light. This work reports on progress regarding both spectral conversion and improved light interaction with the LIMA design [1]. This combines an efficient interdigitated back-contact (IBC) solar cell [2] with a silicon quantum dot (Si-QD) [3] to optimize the spectral distribution of the incident spectrum, and finally a front-side plasmon layer to optimize light interaction. Reflectivity after thickness and proce...

  18. Organic Based Solar Cells with Morphology Control

    OpenAIRE

    Andersen, Thomas Rieks; Bundgaard, Eva; Jørgensen, Mikkel

    2013-01-01

    The field of organic solar cells has in the last years gone through an impressive development with efficiencies reported up to 12 %. For organic solar cells to take the leap from primarily being a laboratory scale technology to being utilized as renewable energy source, several issues need to be addressed. Among these are a more direct transfer of new materials tested on a laboratory scale to large scale production than offered by spincoating, a method offering direct control of the morpholog...

  19. Strategies for Optimizing Organic Solar Cells

    OpenAIRE

    Wynands, David

    2011-01-01

    This work investigates organic solar cells made of small molecules. Using the material system α,ω-bis(dicyanovinylene)-sexithiophene (DCV6T) - C60 as model, the correlation between the photovoltaic active layer morphology and performance of the solar cell is studied. The chosen method for controlling the layer morphology is applying different substrate temperatures (Tsub ) during the deposition of the layer. In neat DCV6T layers, substrate heating induces higher crystallinity as is shown b...

  20. Singlet fission: Towards efficient solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Havlas, Zdeněk; Wen, Jin [Institute of Organic Chemistry and Biochemistry, Academy of Sciences of the Czech Republic, Flemingovo nám. 2, 16610 Prague 6 (Czech Republic); Michl, Josef [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); Institute of Organic Chemistry and Biochemistry, Academy of Sciences of the Czech Republic, Flemingovo nám. 2, 16610 Prague 6 (Czech Republic)

    2015-12-31

    Singlet fission (SF) offers an opportunity to improve solar cell efficiency, but its practical use is hindered by the limited number of known efficient materials, limited knowledge of SF mechanism, mainly the relation between the dimer structure and SF efficiency and diffusion of the triplet states allowing injection of electrons into the solar cell semiconductor band. Here we report on our attempt to design new classes of chromophores and to study the relation between the structure and SF efficiency.

  1. Aqueous-Processed Inorganic Thin-Film Solar Cells Based on CdSe(x)Te(1-x) Nanocrystals: The Impact of Composition on Photovoltaic Performance.

    Science.gov (United States)

    Zeng, Qingsen; Chen, Zhaolai; Zhao, Yue; Du, Xiaohang; Liu, Fangyuan; Jin, Gan; Dong, Fengxia; Zhang, Hao; Yang, Bai

    2015-10-21

    Aqueous processed nanocrystal (NC) solar cells are attractive due to their environmental friendliness and cost effectiveness. Controlling the bandgap of absorbing layers is critical for achieving high efficiency for single and multijunction solar cells. Herein, we tune the bandgap of CdTe through the incorporation of Se via aqueous process. The photovoltaic performance of aqueous CdSexTe1-x NCs is systematically investigated, and the impacts of charge generation, transport, and injection on device performance for different compositions are deeply discussed. We discover that the performance degrades with the increasing Se content from CdTe to CdSe. This is mainly ascribed to the lower conduction band (CB) of CdSexTe1-x with higher Se content, which reduces the driving force for electron injection into TiO2. Finally, the performance is improved by mixing CdSexTe1-x NCs with conjugated polymer poly(p-phenylenevinylene) (PPV), and power conversion efficiency (PCE) of 3.35% is achieved based on ternary NCs. This work may provide some information to further optimize the aqueous-processed NC and hybrid solar cells.

  2. Perovskite Solar Cells: Progress and Advancements

    Directory of Open Access Journals (Sweden)

    Naveen Kumar Elumalai

    2016-10-01

    Full Text Available Organic–inorganic hybrid perovskite solar cells (PSCs have emerged as a new class of optoelectronic semiconductors that revolutionized the photovoltaic research in the recent years. The perovskite solar cells present numerous advantages include unique electronic structure, bandgap tunability, superior charge transport properties, facile processing, and low cost. Perovskite solar cells have demonstrated unprecedented progress in efficiency and its architecture evolved over the period of the last 5–6 years, achieving a high power conversion efficiency of about 22% in 2016, serving as a promising candidate with the potential to replace the existing commercial PV technologies. This review discusses the progress of perovskite solar cells focusing on aspects such as superior electronic properties and unique features of halide perovskite materials compared to that of conventional light absorbing semiconductors. The review also presents a brief overview of device architectures, fabrication methods, and interface engineering of perovskite solar cells. The last part of the review elaborates on the major challenges such as hysteresis and stability issues in perovskite solar cells that serve as a bottleneck for successful commercialization of this promising PV technology.

  3. Achieving High Performance Perovskite Solar Cells

    Science.gov (United States)

    Yang, Yang

    2015-03-01

    Recently, metal halide perovskite based solar cell with the characteristics of rather low raw materials cost, great potential for simple process and scalable production, and extreme high power conversion efficiency (PCE), have been highlighted as one of the most competitive technologies for next generation thin film photovoltaic (PV). In UCLA, we have realized an efficient pathway to achieve high performance pervoskite solar cells, where the findings are beneficial to this unique materials/devices system. Our recent progress lies in perovskite film formation, defect passivation, transport materials design, interface engineering with respect to high performance solar cell, as well as the exploration of its applications beyond photovoltaics. These achievements include: 1) development of vapor assisted solution process (VASP) and moisture assisted solution process, which produces perovskite film with improved conformity, high crystallinity, reduced recombination rate, and the resulting high performance; 2) examination of the defects property of perovskite materials, and demonstration of a self-induced passivation approach to reduce carrier recombination; 3) interface engineering based on design of the carrier transport materials and the electrodes, in combination with high quality perovskite film, which delivers 15 ~ 20% PCEs; 4) a novel integration of bulk heterojunction to perovskite solar cell to achieve better light harvest; 5) fabrication of inverted solar cell device with high efficiency and flexibility and 6) exploration the application of perovskite materials to photodetector. Further development in film, device architecture, and interfaces will lead to continuous improved perovskite solar cells and other organic-inorganic hybrid optoelectronics.

  4. Perovskite solar cells: from materials to devices.

    Science.gov (United States)

    Jung, Hyun Suk; Park, Nam-Gyu

    2015-01-07

    Perovskite solar cells based on organometal halide light absorbers have been considered a promising photovoltaic technology due to their superb power conversion efficiency (PCE) along with very low material costs. Since the first report on a long-term durable solid-state perovskite solar cell with a PCE of 9.7% in 2012, a PCE as high as 19.3% was demonstrated in 2014, and a certified PCE of 17.9% was shown in 2014. Such a high photovoltaic performance is attributed to optically high absorption characteristics and balanced charge transport properties with long diffusion lengths. Nevertheless, there are lots of puzzles to unravel the basis for such high photovoltaic performances. The working principle of perovskite solar cells has not been well established by far, which is the most important thing for understanding perovksite solar cells. In this review, basic fundamentals of perovskite materials including opto-electronic and dielectric properties are described to give a better understanding and insight into high-performing perovskite solar cells. In addition, various fabrication techniques and device structures are described toward the further improvement of perovskite solar cells.

  5. Optimization and performance of Space Station Freedom solar cells

    Science.gov (United States)

    Khemthong, S.; Hansen, N.; Bower, M.

    1991-01-01

    High efficiency, large area and low cost solar cells are the drivers for Space Station solar array designs. The manufacturing throughput, process complexity, yield of the cells, and array manufacturing technique determine the economics of the solar array design. The cell efficiency optimization of large area (8 x 8 m), dielectric wrapthrough contact solar cells are described. The results of the optimization are reported and the solar cell performance of limited production runs is reported.

  6. Improvement of the physical properties of ZnO/CdTe core-shell nanowire arrays by CdCl2 heat treatment for solar cells

    OpenAIRE

    Consonni, Vincent; Renet, Sébastien; Garnier, Jérôme; Gergaud, Patrice; Artús, Lluis; Michallon, Jérôme; Rapenne, Laetitia; Appert, Estelle; Kaminski-Cachopo, Anne

    2014-01-01

    Abstract CdTe is an important compound semiconductor for solar cells, and its use in nanowire-based heterostructures may become a critical requirement, owing to the potential scarcity of tellurium. The effects of the CdCl2 heat treatment are investigated on the physical properties of vertically aligned ZnO/CdTe core-shell nanowire arrays grown by combining chemical bath deposition with close space sublimation. It is found that recrystallization phenomena are induced by the CdCl2 heat treatmen...

  7. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    OpenAIRE

    Alaa Ayad Al-mebir; Paul Harrison; Ali Kadhim; Guanggen Zeng; Judy Wu

    2016-01-01

    An in situ thermal annealing process (iTAP) has been introduced before the common ex situ cadmium chloride (CdCl2) annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing w...

  8. HYBRID FUEL CELL-SOLAR CELL SPACE POWER SUBSYSTEM CAPABILITY.

    Science.gov (United States)

    This report outlines the capabilities and limitations of a hybrid solar cell- fuel cell space power subsystem by comparing the proposed hybrid system...to conventional power subsystem devices. The comparisons are based on projected 1968 capability in the areas of primary and secondary battery, fuel ... cell , solar cell, and chemical dynamic power subsystems. The purpose of the investigation was to determine the relative merits of a hybrid power

  9. Chemically deposited CdS by an ammonia-free process for solar cells window layers

    Energy Technology Data Exchange (ETDEWEB)

    Ochoa-Landin, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico); Departamento de Fisica, Universidad de Sonora, Apdo. Postal 88, 83190 Hermosillo, Son. (Mexico); Sastre-Hernandez, J.; Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional UP Adolfo Lopez Mateos, Edif. 9, 07738 Mexico, DF (Mexico); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)

    2010-02-15

    Chemically deposited CdS window layers were studied on two different transparent conductive substrates, namely indium tin oxide (ITO) and fluorine doped tin oxide (FTO), to determine the influence of their properties on CdS/CdTe solar cells performance. Three types of CdS films obtained from different chemical bath deposition (CBD) processes were studied. The three CBD processes employed sodium citrate as the complexing agent in partial or full substitution of ammonia. The CdS films were studied by X-ray diffraction, optical transmission spectroscopy and atomic force microscopy. CdS/CdTe devices were completed by depositing 3 {mu}m thick CdTe absorbent layers by means of the close-spaced vapor transport technique (CSVT). Evaporated Cu-Au was used as the back contact in all the solar cells. Dark and under illumination J-V characteristic and quantum efficiency measurements were done on the CdS/CdTe devices to determine their conversion efficiency and spectral response. The efficiency of the cells depended on the window layer and on the transparent contact with values between 5.7% and 8.7%. (author)

  10. Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties

    Science.gov (United States)

    Simonds, Brian J.; Misra, Sudhajit; Paudel, Naba; Vandewal, Koen; Salleo, Alberto; Ferekides, Christos; Scarpulla, Michael A.

    2016-04-01

    The high performance of polycrystalline CdTe thin film solar cells is enabled by annealing in the presence of Cl. This process is typically carried out for tens of minutes resulting in reduction of defect states within the bandgap among other beneficial effects. In this work, we investigate laser annealing as a means of rapidly annealing CdTe using a continuous wave sub-bandgap 1064 nm laser. The partial transmission of the beam allows us to monitor the annealing process in-situ and in real time. We find that optoelectronic and structural changes occur through two distinct kinetic processes resulting in the removal of deep defects and twinned regions, respectively. A multilayer optical model including surface roughness is used to interpret both the in-situ transmission as well as ex-situ reflectivity measurements. These experiments demonstrate beneficial material changes resulting from sub-bandgap laser-driven CdCl2 treatment of CdTe in minutes, which is an important step towards accelerating the processing of the CdTe absorber layer.

  11. Tin oxide stability effects—their identification, dependence on processing and impacts on CdTe/CdS solar cell performance

    Science.gov (United States)

    Albin, Dave; Rose, Doug; Dhere, Ramesh; Niles, Dave; Swartzlander, Amy; Mason, Alice; Levi, Dean; Moutinho, Helio; Sheldon, Peter

    1997-02-01

    High efficiency polycrystalline thin film CdTe solar cells involve the growth of CdTe films on CdS/SnO2/glass substrates. The CdS layer in such a structure is commonly reported to benefit from a brief hydrogen anneal prior to the deposition of the CdTe film. In this paper, we show that the SnO2 layer can be susceptible to reduction in H2 and that the degree of susceptibility is dependent on the type of SnO2 used. Chemical vapor deposited (CVD) SnO2/glass substrates (Solarex Corp.) show the most resistance to reduction while room-temperature sputtered SnO2 films show the least resistance. When annealed under reducing conditions, Sn from the SnO2 reacts with S-containing impurities and oxygen in as-grown chemical bath deposited (CBD) CdS films to form SnS. Cd-containing impurities are more volatile resulting in a loss of Cd relative to S in films annealed in H2. These films appear dark due to the presence of SnS, a grayish-black impurity, in the CdS and possibly SnO in the SnO2. In normal CSS CdTe deposition processes where H2 annealing is followed by further heating to deposition temperatures in either He or He:O2 ambient, S loss occurs at temperatures exceeding the H2 anneal. If oxygen is absent, CdS films undergo loss of both Sn and S due to evaporation of the SnS. When O2 is present, SnS converts to SnO2 allowing for only the evaporation of sulfur. In this fashion, Sn levels on the CdS surface immediately prior to the deposition of CdTe, can be affected not only by the temperature of the H2 anneal, but also by the oxygen present during the CdTe deposition step. Modifications to the CdS/CdTe device fabrication process including the use of more stable tin oxide layers (CVD-grown) and lower temperature H2 anneals yield devices with higher open circuit voltage, fill-factors, and total-area efficiencies. Room-temperature sputtered tin oxide can be strengthened against reduction by annealing at 550 °C in 400 torr O2 prior to the CdS deposition step.

  12. Tin oxide stability effects{emdash}their identification, dependence on processing and impacts on CdTe/CdS solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; Rose, D.; Dhere, R.; Niles, D.; Swartzlander, A.; Mason, A.; Levi, D.; Moutinho, H.; Sheldon, P. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    1997-02-01

    High efficiency polycrystalline thin film CdTe solar cells involve the growth of CdTe films on CdS/SnO{sub 2}/glass substrates. The CdS layer in such a structure is commonly reported to benefit from a brief hydrogen anneal prior to the deposition of the CdTe film. In this paper, we show that the SnO{sub 2} layer can be susceptible to reduction in H{sub 2} and that the degree of susceptibility is dependent on the type of SnO{sub 2} used. Chemical vapor deposited (CVD) SnO{sub 2}/glass substrates (Solarex Corp.) show the most resistance to reduction while room-temperature sputtered SnO{sub 2} films show the least resistance. When annealed under reducing conditions, Sn from the SnO{sub 2} reacts with S-containing impurities and oxygen in as-grown chemical bath deposited (CBD) CdS films to form SnS. Cd-containing impurities are more volatile resulting in a loss of Cd relative to S in films annealed in H{sub 2}. These films appear dark due to the presence of SnS, a grayish-black impurity, in the CdS and possibly SnO in the SnO{sub 2}. In normal CSS CdTe deposition processes where H{sub 2} annealing is followed by further heating to deposition temperatures in either He or He:O{sub 2} ambient, S loss occurs at temperatures exceeding the H{sub 2} anneal. If oxygen is absent, CdS films undergo loss of both Sn and S due to evaporation of the SnS. When O{sub 2} is present, SnS converts to SnO{sub 2} allowing for only the evaporation of sulfur. In this fashion, Sn levels on the CdS surface immediately prior to the deposition of CdTe, can be affected not only by the temperature of the H{sub 2} anneal, but also by the oxygen present during the CdTe deposition step. Modifications to the CdS/CdTe device fabrication process including the use of more stable tin oxide layers (CVD-grown) and lower temperature H{sub 2} anneals yield devices with higher open circuit voltage, fill-factors, and total-area efficiencies. (Abstract Truncated)

  13. Influence of radiation on the properties of solar cells

    OpenAIRE

    Zdravković Miloš R.; Vasić Aleksandra I.; Radosavljević Radovan Lj.; Vujisić Miloš Lj.; Osmokrović Predrag V.

    2011-01-01

    The wide substitution of conventional types of energy by solar energy lies in the rate of developing solar cell technology. Silicon is still the mostly used element for solar cell production, so efforts are directed to the improvement of physical properties of silicon structures. There are several trends in the development of solar cells, but mainly two directions are indicated: the improvement of the conventional solar cell characteristics based on semiconductor materials, and explorin...

  14. Plastic Schottky-barrier solar cells

    Science.gov (United States)

    Waldrop, J.R.; Cohen, M.J.

    1981-12-30

    A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

  15. Automated solar cell assembly team process research

    Science.gov (United States)

    Nowlan, M. J.; Hogan, S. J.; Darkazalli, G.; Breen, W. F.; Murach, J. M.; Sutherland, S. F.; Patterson, J. S.

    1994-06-01

    This report describes work done under the Photovoltaic Manufacturing Technology (PVMaT) project, Phase 3A, which addresses problems that are generic to the photovoltaic (PV) industry. Spire's objective during Phase 3A was to use its light soldering technology and experience to design and fabricate solar cell tabbing and interconnecting equipment to develop new, high-yield, high-throughput, fully automated processes for tabbing and interconnecting thin cells. Areas that were addressed include processing rates, process control, yield, throughput, material utilization efficiency, and increased use of automation. Spire teamed with Solec International, a PV module manufacturer, and the University of Massachusetts at Lowell's Center for Productivity Enhancement (CPE), automation specialists, who are lower-tier subcontractors. A number of other PV manufacturers, including Siemens Solar, Mobil Solar, Solar Web, and Texas instruments, agreed to evaluate the processes developed under this program.

  16. Microbial solar cells: applying photosynthetic and electrochemically active organisms

    NARCIS (Netherlands)

    Strik, D.P.B.T.B.; Timmers, R.A.; Helder, M.; Steinbusch, K.J.J.; Hamelers, H.V.M.; Buisman, C.J.N.

    2011-01-01

    Microbial solar cells (MSCs) are recently developed technologies that utilize solar energy to produce electricity or chemicals. MSCs use photoautotrophic microorganisms or higher plants to harvest solar energy, and use electrochemically active microorganisms in the bioelectrochemical system to gener

  17. Semi-transparent polymer solar cells

    Science.gov (United States)

    Romero-Gómez, Pablo; Pastorelli, Francesco; Mantilla-Pérez, Paola; Mariano, Marina; Martínez-Otero, Alberto; Elias, Xavier; Betancur, Rafael; Martorell, Jordi

    2015-01-01

    Over the last three decades, progress in the organic photovoltaic field has resulted in some device features which make organic cells applicable in electricity generation configurations where the standard silicon-based technology is not suitable, for instance, when a semi-transparent photovoltaic panel is needed. When the thin film solar cell performance is evaluated in terms of the device's visible transparency and power conversion efficiency, organic solar cells offer the most promising solution. During the last three years, research in the field has consolidated several approaches for the fabrication of high performance semi-transparent organic solar cells. We have grouped these approaches under three categories: devices where the absorber layer includes near-infrared absorption polymers, devices incorporating one-dimensional photonic crystals, and devices with a metal cavity light trapping configuration. We herein review these approaches.

  18. Solar Cell Calibration and Measurement Techniques

    Science.gov (United States)

    Bailey, Sheila; Brinker, Dave; Curtis, Henry; Jenkins, Phillip; Scheiman, Dave

    2004-01-01

    The increasing complexity of space solar cells and the increasing international markets for both cells and arrays has resulted in workshops jointly sponsored by NASDA, ESA and NASA. These workshops are designed to obtain international agreement on standardized values for the AMO spectrum and constant, recommend laboratory measurement practices and establish a set of protocols for international comparison of laboratory measurements. A working draft of an ISO standard, WD15387, "Requirements for Measurement and Calibration Procedures for Space Solar Cells" was discussed with a focus on the scope of the document, a definition of primary standard cell, and required error analysis for all measurement techniques. Working groups addressed the issues of Air Mass Zero (AMO) solar constant and spectrum, laboratory measurement techniques, and te international round robin methodology. A summary is presented of the current state of each area and the formulation of the ISO document.

  19. Nanoparticles and nanoimaging for organic solar cells

    DEFF Research Database (Denmark)

    Pedersen, Emil Bøje Lind

    Solar energy is one of the few energy sources with the potential to power humanity in a future scenario where fossil fuels are not attractive due to their effect on the global climate or fossil fuels have been depleted all together. Organic photovoltaics is a promising technology for solar...... in photoactive Landfester nanoparticles. The dispersed particles are characterized by size, internal structure and crystallinity. Crystal orientation and spatial distribution of materials are quantified for cast layers of Landfester particles. A layer of particles is also investigated in a tandem solar cell...

  20. Microscopic optoelectronic defectoscopy of solar cells

    Directory of Open Access Journals (Sweden)

    Dallaeva D.

    2013-05-01

    Full Text Available Scanning probe microscopes are powerful tool for micro- or nanoscale diagnostics of defects in crystalline silicon solar cells. Solar cell is a large p-n junction semiconductor device. Its quality is strongly damaged by the presence of defects. If the cell works under low reverse-biased voltage, defects emit a light in visible range. The suggested method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current and thus provides more complex information. To prove its feasibility, we have selected one defect (truncated pyramid in the sample, which emitted light under low reverse-biased voltage.