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Sample records for cdte semiconductor detectors

  1. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  2. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  3. Advanced processing of CdTe pixel radiation detectors

    Science.gov (United States)

    Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

    2017-12-01

    We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

  4. Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

    International Nuclear Information System (INIS)

    Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

    2008-01-01

    Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

  5. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    International Nuclear Information System (INIS)

    Jambi, L.K.; Lees, J.E.; Bugby, S.L.; Alqahtani, M.S.; Tipper, S.; Perkins, A.C.

    2015-01-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

  6. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  7. Study on response function of CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunduk; Cho, Gyuseong [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kang, Bo-Sun [Department of Radiological Science, Catholic University of Daegu, Kyoungsan, Kyoungbuk 712-702 (Korea, Republic of)], E-mail: bskang@cu.ac.kr

    2009-10-21

    So far the origin of the mechanism of light emission in the sonoluminescence has not elucidated whether it is due to blackbody radiation or bremsstrahlung. The final goal of our study is measuring X-ray energy spectrum using high-sensitivity cadmium telluride (CdTe) detector in order to obtain information for understanding sonoluminescence phenomena. However, the scope of this report is the measurement of X-ray spectrum using a high-resolution CdTe detector and determination of CdTe detector response function to obtain the corrected spectrum from measured soft X-ray source spectrum. In general, the measured spectrum was distorted by the characteristics of CdTe detector. Monte Carlo simulation code, MCNP, was used to obtain the reference response function of the CdTe detector. The X-ray spectra of {sup 57}Co, {sup 133}Ba, and {sup 241}Am were obtained by a 4x4x1.0(t) mm{sup 3} CdTe detector at room temperature.

  8. The semi-conductor detectors: art state, new concepts

    International Nuclear Information System (INIS)

    Pochet, T.

    1993-01-01

    After a brief recall of signal formation principle in a detector and of its different operation modes, the high Z materials as CdTe, HgI 2 , GaAs ,Ge and Si are presented, followed by the new 'thin layer' semiconductors

  9. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  10. Evaluation of K x-ray escape and crosstalk in CdTe detectors and multi-channel detectors

    International Nuclear Information System (INIS)

    Ohtsuchi, Tetsuro; Ohmori, Koichi; Tsutsui, Hiroshi; Baba, Sueki

    1995-01-01

    The simple structure of CdTe semiconductor detectors facilitates their downsizing, and their possible application to radiographic sensors has been studied. The escape of K X-rays from these detectors increases with reduction of their dimensions and affects the measurements of X- and gamma-ray spectra. K X-rays also produce crosstalk in multi-channel detectors with adjacent channels. Therefore, K X-rays which escape from the detector elements degrade both the precision of energy spectra and spatial resolution. The ratios of escape peak integrated counts to total photon counts for various sizes of CdTe single detectors were calculated for gamma rays using the Monte Carlo method. Also, escape and crosstalk ratios were simulated for the CdTe multi-channel detectors. The theoretical results were tested experimentally for 59.54-keV gamma rays from a 241 Am radioactive source. Results showed that escape ratios for single detectors were strongly dependent on element size and thickness. The escape and crosstalk ratios increased with closer channel pitch. The calculated results showed a good agreement with the experimental data. The calculations made it clear that K X-rays which escaped to neighboring channels induced crosstalk more frequently at smaller channel pitch in multichannel detectors. A radiation shielding grid which blocked incident photons between the boundary channels was also tested by experiment and by calculation. It was effective in reducing the probability of escape and crosstalk

  11. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  12. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  13. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  14. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  15. A stacked CdTe pixel detector for a compton camera

    International Nuclear Information System (INIS)

    Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Ushio, Masayoshi; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu

    2007-01-01

    We are developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. A detector material of combined Si strip and CdTe pixel is used to cover the energy range around 60keV. For energies above several hundred keV, in contrast, the higher detection efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as both an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton camera, we developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton kinematics within the energy band from 122 to 662keV. The energy resolution (FWHM) of reconstructed spectra is 7.3keV at 511keV. The angular resolution obtained at 511keV is measured to be 12.2 deg. (FWHM)

  16. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  17. Comparative study for small computer supported clearance determination with 131iodine hippuran using CdTe detectors

    International Nuclear Information System (INIS)

    Duerr, G.

    1986-01-01

    With the goal to work out a simple, non-invasive method for the total clearance determination also for immobile patients, we carried out this clearance study with CdTe semi-conductor detectors. The 131 iodine hippuran clearance determination was carried out on 69 patients in the nuclear medicine department of the Radiological Policlinic in the framework of a routine diagnosis with ambulant and stationary patients with a gamma camera and a connecting evaluation system. At the same time we recorded the shoulder curves using two CdTe semi-conductor detectors and deposited the data in a portable semi-conductor memory. Next the hypotheses for the routine use with the inclusion of commercially common small computers was worked out. The plasma disappearance curves which were recorded over the shoulder region were evaluated with a small computer according to the method of the modified Oberhausen tables and the Oberhausen formula. (orig./DG) [de

  18. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  19. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  20. Preliminary report on the development of a high resolution PET camera using semiconductor detectors

    International Nuclear Information System (INIS)

    Kikuchi, Yohei; Ishii, Keizo; Yamazaki, Hiromichi; Matsuyama, Shigeo; Yamaguchi, Takashi; Yamamoto, Yusuke; Sato, Takemi; Aoki, Yasushi; Aoki, Kenichi

    2005-01-01

    We are developing a PET camera using small semiconductor detectors, whose resolution is equivalent to the physical limit of spatial resolution. First, a coincidence system of 16 Schottky CdTe detectors of 0.5 mm width obtained a resolution of <1 mm and it was confirmed that the Schottky CdTe detector is suitable for high resolution PET. Next, the performance of a pair of 32 channel CdTe arrays (1.2 mm width per channel) was investigated for the development of the prototype of high resolution PET. The time resolution between opposing detector pair was 13 ns (FWHM) when high voltage (700 V) was applied. The image of a 0.6 mm diameter point source was obtained in an experiment with opposing detector arrays using four channels, indicating that, a higher resolution can be achieved with the 32 channel CdTe array

  1. A 90 element CdTe array detector

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Y.; Onozuka, A.; Ohmori, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Electronic Material and Components Labs.); Funaki, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Materials Development Research Labs.)

    1992-11-15

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 [mu]s, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV [gamma]-rays. (orig.).

  2. A 90 element CdTe array detector

    Science.gov (United States)

    Iwase, Y.; Funaki, M.; Onozuka, A.; Ohmori, M.

    1992-11-01

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 μs, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV γ-rays.

  3. Digital signal processing for CdTe detectors using VXIbus data collection systems

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

    1996-07-01

    Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

  4. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  5. Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

    CERN Document Server

    Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

    2011-01-01

    We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

  6. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  7. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  8. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  9. Study of the effect of the stress on CdTe nuclear detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ayoub, M.; Radley, I.; Mullins, J. T. [Kromek, Thomas Wright way, TS21 3FD, Sedgefield, County Durham (United Kingdom); Hage-Ali, M. [CLEA, Airport road, Beirut (Lebanon)

    2013-09-14

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  10. Study of the effect of the stress on CdTe nuclear detectors

    International Nuclear Information System (INIS)

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-01-01

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given

  11. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    Montemont, Guillaume

    2000-01-01

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

  12. Characterization inconsistencies in CdTe and CZT gamma-ray detectors

    International Nuclear Information System (INIS)

    Lavietes, A.D.; McQuaid, J.H.

    1994-10-01

    In the past few years, significant developments in cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductor materials have taken place with respect to both quality and yield. Many of the more recent developments have occurred in the area of CZT crystal growth. This has resulted in an explosion of interest in the use of these materials in ambient temperature gamma-ray detectors. Most, if not all, of the manufacturers of CdTe and CZT have acquired government funding to continue research in development and applications, indicating the importance of these improvements in material quality. We have examined many detectors, along with the accompanying manufacturer's data, and it has become apparent that a clear standard does not exist by which each manufacturer characterizes the performance of their material. Result is a wide variety of performance claims that have no basis for comparison and normally cannot be readily reproduced. This paper first supports our observations and then proposes a standard that all manufacturers and users of these materials may use for characterization

  13. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  14. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  15. Multi electrode semiconductors detectors

    CERN Document Server

    Amendolia, S R; Bertolucci, Ennio; Bosisio, L; Bradaschia, C; Budinich, M; Fidecaro, F; Foà, L; Focardi, E; Giazotto, A; Giorgi, M A; Marrocchesi, P S; Menzione, A; Ristori, L; Rolandi, Luigi; Scribano, A; Stefanini, A; Vincelli, M L

    1981-01-01

    Detectors with very high space resolution have been built in this laboratory and tested at CERN in order to investigate their possible use in high energy physics experiments. These detectors consist of thin layers of silicon crystals acting as ionization chambers. Thin electrodes, structured in strips or in more fancy shapes are applied to their surfaces by metal coating. The space resolution which could be reached is of the order of a few microns. An interesting feature of these solid state detectors is that they can work under very high or low external pressure or at very low temperature. The use of these detectors would strongly reduce the dimensions and the cost of high energy experiments. (3 refs).

  16. Multi electrode semiconductor detectors

    International Nuclear Information System (INIS)

    Amendolia, S.R.; Batignani, G.; Bertolucci, E.; Bosisio, L.; Budinich, M.; Bradaschia, C.; Fidecaro, F.; Foa, L.; Focardi, E.; Giazotto, A.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Ristori, L.; Rolandi, L.; Scribano, A.; Stefanini, A.; Vincelli, M.L.

    1981-01-01

    Detectors with very high space resolution have been built in the laboratory and tested at CERN in order to investigate their possible use in high energy physics experiments. These detectors consist of thin layers of silicon crystals acting as ionization chambers. Thin electrodes, structured in strips or in more fancy shapes are applied to their surfaces by metal coating. The space resolution which could be reached is of the order of a few microns. An interesting feature of these solid state detectors is that they can work under very high or low external pressure or at very low temperature. The use of these detectors would strongly reduce the dimensions and the cost of high energy experiments. (Auth.)

  17. Semiconductor Thermal Neutron Detector

    Directory of Open Access Journals (Sweden)

    Toru Aoki

    2014-02-01

    Full Text Available The  CdTe  and  GaN  detector  with  a  Gd  converter  have  been developed  and  investigated  as  a  neutron  detector  for neutron  imaging.  The  fabricated  Gd/CdTe  detector  with  the  25  mm  thick  Gd  was  designed  on  the  basis  of  simulation results  of  thermal  neutron  detection  efficiency  and  spatial  resolution.  The  Gd/CdTe  detector  shows  the  detection  of neutron  capture  gamma  ray  emission  in  the  155Gd(n,  g156Gd,  157Gd(n,  g158Gd  and  113Cd(n,  g114Cd  reactions  and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a BGaN detector has also investigated to separate neutron signal from gamma-ray clearly. 

  18. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  19. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  20. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    International Nuclear Information System (INIS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch.; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an infarct

  1. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  2. Application of energy dispersive X-ray spectrometers with semiconductor detectors in radiometric analyses

    International Nuclear Information System (INIS)

    Jugelt, P.; Schieckel, M.

    1983-01-01

    Problems and possibilities of applying semiconductor detector spectrometers in radiometric analyses are described. A summary of the state of the art and tendencies of device engineering and spectra evaluation is given. Liquid-nitrogen cooled Li-drifted Si-detectors and high-purity Ge-detectors are compared. Semiconductor detectors working at room temperature are under development. In this connection CdTe and HgI 2 semiconductor detectors are compared. The use of small efficient computers in the spectrometer systems stimulates the development of algorithms for spectra analyses and for determining the concentration. Fields of application of energy dispersive X-ray spectrometers are X-ray diffraction and X-ray macroanalysis in investigating the structure of extensive surface regions

  3. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  4. Miniature semiconductor detectors for in vivo dosimetry

    International Nuclear Information System (INIS)

    Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

    2006-01-01

    Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

  5. Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

    International Nuclear Information System (INIS)

    Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

    1999-01-01

    The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

  6. A new MBE CdTe photoconductor array detector for X-ray applications

    International Nuclear Information System (INIS)

    Yoo, S.S.; Sivananthan, S.; Faurie, J.P.; Rodricks, B.; Bai, J.; Montano, P.A.; Argonne National Lab., IL

    1994-10-01

    A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 microm FWHM using a 50 microm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors in particular for the new high brightness synchrotron sources

  7. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    Science.gov (United States)

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  8. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  9. Time resolution improvement of Schottky CdTe PET detectors using digital signal processing

    International Nuclear Information System (INIS)

    Nakhostin, M.; Ishii, K.; Kikuchi, Y.; Matsuyama, S.; Yamazaki, H.; Torshabi, A. Esmaili

    2009-01-01

    We present the results of our study on the timing performance of Schottky CdTe PET detectors using the technique of digital signal processing. The coincidence signals between a CdTe detector (15x15x1 mm 3 ) and a fast liquid scintillator detector were digitized by a fast digital oscilloscope and analyzed. In the analysis, digital versions of the elements of timing circuits, including pulse shaper and time discriminator, were created and a digital implementation of the Amplitude and Rise-time Compensation (ARC) mode of timing was performed. Owing to a very fine adjustment of the parameters of timing measurement, a good time resolution of less than 9.9 ns (FWHM) at an energy threshold of 150 keV was achieved. In the next step, a new method of time pickoff for improvement of timing resolution without loss in the detection efficiency of CdTe detectors was examined. In the method, signals from a CdTe detector are grouped by their rise-times and different procedures of time pickoff are applied to the signals of each group. Then, the time pickoffs are synchronized by compensating the fixed time offset, caused by the different time pickoff procedures. This method leads to an improved time resolution of ∼7.2 ns (FWHM) at an energy threshold of as low as 150 keV. The methods presented in this work are computationally fast enough to be used for online processing of data in an actual PET system.

  10. Tests of UFXC32k chip with CdTe pixel detector

    Science.gov (United States)

    Maj, P.; Taguchi, T.; Nakaye, Y.

    2018-02-01

    The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

  11. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  12. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    International Nuclear Information System (INIS)

    Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

    2008-01-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

  13. Semiconductor high-energy radiation scintillation detector

    International Nuclear Information System (INIS)

    Kastalsky, A.; Luryi, S.; Spivak, B.

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

  14. Semiconductor detectors with proximity signal readout

    International Nuclear Information System (INIS)

    Asztalos, Stephen J.

    2012-01-01

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need

  15. Local polarization phenomena in In-doped CdTe x-ray detector arrays

    International Nuclear Information System (INIS)

    Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

    1995-01-01

    Local polarization phenomena have been studied in detector arrays with the detector element size of 500 microm x 500 microm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals

  16. Characterization of a pixelated CdTe Timepix detector operated in ToT mode

    International Nuclear Information System (INIS)

    Billoud, T.; Leroy, C.; Papadatos, C.; Roux, J.S.; Pichotka, M.; Pospisil, S.

    2017-01-01

    A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55  μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241 Am source, photons from a 137 Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300  μm thick silicon Timepix device. The electron mobility-lifetime product (μ e τ e ) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

  17. Quantitative analysis of polarization phenomena in CdTe radiation detectors

    International Nuclear Information System (INIS)

    Toyama, Hiroyuki; Higa, Akira; Yamazato, Masaaki; Maehama, Takehiro; Toguchi, Minoru; Ohno, Ryoichi

    2006-01-01

    Polarization phenomena in a Schottky-type CdTe radiation detector were studied. We evaluated the distribution of electric field in a biased CdTe detector by measuring the progressive change of Schottky barrier lowering with time. The parameters of deep acceptors such as detrapping time, concentration, and the depth of the energy level were quantitatively evaluated. In the case of applying the conventional model of charge accumulation, the obtained result shows that the CdTe bulk is never undepleted. We modified the charge accumulation model by taking account of the occupation state of the deep acceptor level. When a modified model is applied, the time that the depletion width in the bulk begins to diminish closely fits the time that the photopeak position begins to shift in radiation measurements. In this paper, we present a distribution of electric field during biasing and a simple method for the evaluation of the parameters of deep acceptors in CdTe bulk. (author)

  18. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.A.

    1991-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

  19. Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

    Science.gov (United States)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam; hide

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires less than 100 micrometers position resolution (to take advantage of the angular resolution of the optics) and approximately equals 1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (greater than -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 micrometers for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 micrometers and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of approximately equals 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  20. The use of portable semiconductor detectors in nuclear medicine

    International Nuclear Information System (INIS)

    Kuhn, W.

    1986-01-01

    A new biotelemetric system, CdTe semiconductor detectors with portable hard memory, for the registration of time activity curves in particular body regions of patients is introduced. The hard- and software connection of the system to the already present EDV configuration is described. The characteristics of the detectors are studied, theoretically explained and compared to the information given by the producers. By means of the determination of the ortho-iodine hippuric acid clearance (OIH) from the registration of the time activity curves in the chest the first information about the practicability in clinical use as well as the validity of the method are deduced. The detector system proved itself to be susceptible to problems, especially from manipulation of the cable or from movement of the patient. The determination of the OIH clearance from the partial body curve was problematic, because an extrapolation to the whole body based on the specific OIH kinetic in the small, observed tissue section is difficult. The comparison with the camera picture should be carefully evaluated, because this method has in principle the same inadequacies. (orig./HP) [de

  1. Fast polycrystalline CdTe detectors for bunch-by-bunch luminosity monitoring in the LHC

    CERN Document Server

    Brambilla, A; Jolliot, M; Bravin, E

    2008-01-01

    The luminosity at the four interaction points of the Large Hadron Collider (LHC) must be continuously monitored in order to provide an adequate tool for the control and optimisation of beam parameters. Polycrystalline cadmium telluride (CdTe) detectors have previously been tested, showing their high potential to fulfil the requirements of luminosity measurement in the severe environment of the LHC interaction regions. Further, the large signal yield and the fast response time should allow bunch-by-bunch measurement of the luminosity at 40 MHz with high accuracy. Four luminosity monitors with two rows of five polycrystalline CdTe detectors each have been fabricated and will be installed at both sides of the low-luminosity interaction points ALICE and LHC-b. A detector housing was specially designed to meet the mechanical constraints in the LHC. A series of elementary CdTe detectors were fabricated and tested, of which 40 were selected for the luminosity monitors. A sensitivity of 104 electrons per minimum ioni...

  2. Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

    Science.gov (United States)

    Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

    High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

  3. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  4. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.

    1992-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

  5. Improvement of the sensitivity of CdTe detectors in the high energy regions

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

    1996-07-01

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  6. CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

    International Nuclear Information System (INIS)

    Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

    1999-01-01

    Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

  7. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  8. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  9. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  10. Microelectronics used for Semiconductor Imaging Detectors

    CERN Document Server

    Heijne, Erik H M

    2010-01-01

    Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

  11. Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

    International Nuclear Information System (INIS)

    Fritsche, J.

    2003-01-01

    In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

  12. X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

    Science.gov (United States)

    Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

    2012-07-01

    A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

  13. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  14. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    International Nuclear Information System (INIS)

    Guerra, P; Santos, A; Darambara, D G

    2009-01-01

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

  15. CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

    International Nuclear Information System (INIS)

    Cuzin, M.

    1991-01-01

    Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm 3 ). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

  16. Semiconductor detectors in the low countries

    International Nuclear Information System (INIS)

    Heijne, Erik H.M.

    2003-01-01

    Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double-sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime ∼10 -12 s, which decay on sub-millimeter scale. The intensive activity in silicon detector R and D culminated in 1991 in the construction of fine-grained 2D monolithic and hybrid pixel detectors that incorporate sophisticated electronic functions in each microscopic detection element, with typical dimensions of 25-100 μm. Besides being a powerful high intensity tracker for particle physics, this device can also be designed as a new X-ray imager, which allows selective counting of individual photons in each pixel at MHz frequency

  17. Polycrystalline CdTe detectors: A luminosity monitor for the LHC

    International Nuclear Information System (INIS)

    Gschwendtner, E.; Placidia, M.; Schmicklera, H.

    2003-01-01

    The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches caused by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (108 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring human intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40 MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fulfill the requirements and are considered as LHC luminosity monitors. In this paper the interaction region is shown and the characteristics of the CdTe detectors are presented

  18. Polycrystalline CdTe detectors: A luminosity monitor for the LHC

    Science.gov (United States)

    Gschwendtner, E.; Placidia, M.; Schmicklera, H.

    2003-09-01

    The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches caused by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (108 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring human intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40 MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fulfill the requirements and are considered as LHC luminosity monitors. In this paper the interaction region is shown and the characteristics of the CdTe detectors are presented.

  19. A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

    International Nuclear Information System (INIS)

    Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

    2009-01-01

    The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

  20. Solid state semiconductor detectorized survey meter

    International Nuclear Information System (INIS)

    Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

    1987-01-01

    Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

  1. Semiconductor detectors in the low countries

    CERN Document Server

    Heijne, Erik H M

    2003-01-01

    Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double- sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime similar to 10**- **1**2s, which decay on sub-millimeter scale. The intensive activity in silicon detector R&D c...

  2. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    International Nuclear Information System (INIS)

    Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

    2006-01-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 μm, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10 3 cm -1 because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several growth

  3. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

  4. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  5. ASTRO-H CdTe detectors proton irradiation at PIF

    International Nuclear Information System (INIS)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

    2015-01-01

    Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

  6. Superconducting detectors for semiconductor quantum photonics

    International Nuclear Information System (INIS)

    Reithmaier, Guenther M.

    2015-01-01

    In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.

  7. Measurements of low noise 64 channel counting ASIC for Si and CdTe strip detectors

    International Nuclear Information System (INIS)

    Kachel, M; Grybos, P; Szczygiel, R; Takeyoshi, T

    2011-01-01

    We present the design and performance of a 64-channel ASIC called SXDR64. The circuit is intended to work with DC coupled CdTe detectors as well as with standard AC coupled Si detectors. A single channel of the ASIC consists of a charge sensitive amplifier with a pole-zero cancellation circuit, a 4 th order programmable shaper, a base-line restorer and two independent discriminators with 20-bit counters equipped with RAM. The circuit is able to operate correctly with both polarities of the input signal and the detectors leakage current in a few nA range, with the average rate of input pulses up to 1 Mcps.

  8. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    International Nuclear Information System (INIS)

    Oliveira, Icimone B.

    2011-01-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  9. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  10. CdTe hybrid pixel detector for imaging with thermal neutrons

    Czech Academy of Sciences Publication Activity Database

    Jakůbek, J.; Mettivier, G.; Montesi, M.C.; Pospíšil, S.; Russo, P.; Vacík, Jiří

    2006-01-01

    Roč. 563, č. 1 (2006), s. 238-241 ISSN 0168-9002 R&D Pro jects: GA MŠk 1P04LA211 Institutional research plan: CEZ:AV0Z10480505 Keywords : neutronography * pixel detector * semiconductor detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.185, year: 2006

  11. Peltier battery thermostat for semiconductor detectors

    International Nuclear Information System (INIS)

    Caini, V.

    1980-01-01

    The description is given of a Peltier battery cooling thermostat for semiconductor detectors, whose sensing element is the detector itself. A signal proportional to the leakage current is amplified and compared with a chosen reference voltage. The difference, amplified and sensed, regulates the cooling current to the Peltier battery. Special mechanical devices speed up measurement-taking. The leakage current proved to be reducible to as little as 1/1000 of that at ambient temperature and the stabilization obtained is between +-5 nA (although between +-1 nA is also feasible). Hence it is possible to use very high load resistance preamplifiers to reduce noise and to improve stability and pulse height resolution in α spectroscopy, even with a detector unsuitable for work at very low temperatures. Other applications can be foreseen. (orig.)

  12. Feasibility study on BNCT-SPECT using a CdTe detector

    International Nuclear Information System (INIS)

    Murata, Isao; Mukai, Taiki; Ito, Masao; Miyamaru, Hiroyuki; Yoshida, Shigeo

    2011-01-01

    There is no doubt that boron neutron capture therapy (BNCT) is a promising cancer therapy in the near future. At present, one of the severest problems to solve is monitoring of the treatment effect during neutron irradiation. It is known to be difficult in real time. So far, activation foils, small detectors and so on were used to measure the thermal neutron fluence in a certain place of the tumor. The dose distribution is thus estimated from the measured result and prediction with a transport code. In the present study, 478 keV gamma-rays emitted from the excited state of 7 Li produced by 10 B(n,α) 7 Li reaction are directly measured to realize real time monitoring of the treatment effect of BNCT. In this paper, the result of the feasibility study carried out using a Monte Carlo transport code is summarized. We used CdTe detectors with a quite narrow collimator to obtain a BNCT image keeping good spatial resolution. The intensity of capture gamma-rays of 2223 keV produced by 1 H(n,γ) 2 H reaction is very much higher than that of 478 keV. We thus adjusted the detector efficiency by selecting an appropriate thickness so as to optimize the efficiency ratio between 478 and 2223 keV. From the result of the detector response calculation, in case of 20 mm thick CdTe detector with the collimator of 2 mm in diameter, sufficient net count of ∼1000 for 478 keV in 30 min. was realized. It means an efficient and high-resolution BNCT-SPECT image could be obtained. (author)

  13. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

    2014-04-01

    CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

  14. Basic performance and stability of a CdTe solid-state detector panel.

    Science.gov (United States)

    Tsuchiya, Katsutoshi; Takahashi, Isao; Kawaguchi, Tsuneaki; Yokoi, Kazuma; Morimoto, Yuuichi; Ishitsu, Takafumi; Suzuki, Atsurou; Ueno, Yuuichirou; Kobashi, Keiji

    2010-05-01

    We have developed a prototype gamma camera system (R1-M) using a cadmium telluride (CdTe) detector panel and evaluated the basic performance and the spectral stability. The CdTe panel consists of 5-mm-thick crystals. The field of view is 134 x 268 mm comprising 18,432 pixels with a pixel pitch of 1.4 mm. Replaceable small CdTe modules are mounted on to the circuit board by dedicated zero insertion force connectors. To make the readout circuit compact, the matrix read out is processed by dedicated ASICs. The panel is equipped with a cold-air cooling system. The temperature and humidity in the panel were kept at 20 degrees C and below 70% relative humidity. CdTe polarization was suppressed by the bias refresh technique to stabilize the detector. We also produced three dedicated square pixel-matched collimators: LEGP (20 mm-thick), LEHR (27 mm-thick), and LEUHR (35 mm-thick). We evaluated their basic performance (energy resolution, system resolution, and sensitivity) and the spectral stability in terms of short-term (several hours of continuous acquisition) and long-term (infrequent measurements over more than a year) activity. The intrinsic energy resolution (FWHM) acquired with Tc-99m (140.5 keV) was 6.6%. The spatial resolutions (FWHM at a distance of 100 mm) with LEGP, LEHR, and LEUHR collimators were 5.7, 4.9, and 4.2 mm, and the sensitivities were 71, 39, and 23 cps/MBq, respectively. The energy peak position and the intrinsic energy resolution after several hours of operation were nearly the same as the values a few minutes after the system was powered on; the variation of the peak position was <0.2%, and that of the resolution was about 0.3%. Infrequent measurements conducted over a year showed that the variations of the energy peak position and the intrinsic energy resolution of the system were at a similar level to those described above. The basic performance of the CdTe-gamma camera system was evaluated, and its stability was verified. It was shown that the

  15. Spectral resolution and high-flux capability tradeoffs in CdTe detectors for clinical CT.

    Science.gov (United States)

    Hsieh, Scott S; Rajbhandary, Paurakh L; Pelc, Norbert J

    2018-04-01

    Photon-counting detectors using CdTe or CZT substrates are promising candidates for future CT systems but suffer from a number of nonidealities, including charge sharing and pulse pileup. By increasing the pixel size of the detector, the system can improve charge sharing characteristics at the expense of increasing pileup. The purpose of this work is to describe these considerations in the optimization of the detector pixel pitch. The transport of x rays through the CdTe substrate was simulated in a Monte Carlo fashion using GEANT4. Deposited energy was converted into charges distributed as a Gaussian function with size dependent on interaction depth to capture spreading from diffusion and Coulomb repulsion. The charges were then collected in a pixelated fashion. Pulse pileup was incorporated separately with Monte Carlo simulation. The Cramér-Rao lower bound (CRLB) of the measurement variance was numerically estimated for the basis material projections. Noise in these estimates was propagated into CT images. We simulated pixel pitches of 250, 350, and 450 microns and compared the results to a photon counting detector with pileup but otherwise ideal energy response and an ideal dual-energy system (80/140 kVp with tin filtration). The modeled CdTe thickness was 2 mm, the incident spectrum was 140 kVp and 500 mA, and the effective dead time was 67 ns. Charge summing circuitry was not modeled. We restricted our simulations to objects of uniform thickness and did not consider the potential advantage of smaller pixels at high spatial frequencies. At very high x-ray flux, pulse pileup dominates and small pixel sizes perform best. At low flux or for thick objects, charge sharing dominates and large pixel sizes perform best. At low flux and depending on the beam hardness, the CRLB of variance in basis material projections tasks can be 32%-55% higher with a 250 micron pixel pitch compared to a 450 micron pixel pitch. However, both are about four times worse in variance

  16. MCNPX calculations for electron irradiated semiconductor detectors

    International Nuclear Information System (INIS)

    Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

    2014-01-01

    This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

  17. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  18. Thrombus detection using 125I-fibrinogen and a CdTe probe

    International Nuclear Information System (INIS)

    Garcia, D.A.; Frisbie, J.H.; Tow, D.E.; Sasahara, A.A.; Entine, G.

    1976-01-01

    A compact CdTe detector system was developed for use in a clinical screening test for venous thrombosis of the legs. Patients given intravenously administered autologous 125 I-fibrinogen were probed externally at selected points on the thighs and calves for abnormal accumulations of radioactivity. Measurements made with the CdTe probe were compared to those obtained with a standard portable NaI detector system. The CdTe probe was the equal of the NaI detector in diagnostic capability. The compact design of the semiconductor system considerably eased the probing procedure, especially in bedridden patients with limited mobility of the extremities

  19. Studies and development of a readout ASIC for pixelated CdTe detectors for space applications

    International Nuclear Information System (INIS)

    Michalowska, A.

    2013-01-01

    The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l'Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit. In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit, related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF-1 pF and a dark current below 5 pA. In the frame of this thesis I have

  20. Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

    Science.gov (United States)

    Astromskas, Vytautas

    Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

  1. Polycrystalline CdTe Detectors A Luminosity Monitor for the LHC

    CERN Document Server

    Gschwendtner, E; Schmickler, Hermann

    2003-01-01

    The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches causes by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (10^8 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring humain intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fu...

  2. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ede, Anthony

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

  3. The study of response of wide band gap semiconductor detectors using the Geant4

    Directory of Open Access Journals (Sweden)

    Hussain Riaz

    2014-01-01

    Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

  4. Characterization of CdTe and (CdZn)Te detectors with different metal contacts

    Science.gov (United States)

    Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

    2013-09-01

    In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

  5. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    Energy Technology Data Exchange (ETDEWEB)

    Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

    2016-07-11

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

  6. Semiconductor scintillator detector for gamma radiation

    International Nuclear Information System (INIS)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S.

    2015-01-01

    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  7. Possible use of CdTe detectors in kVp monitoring of diagnostic X-ray tubes

    International Nuclear Information System (INIS)

    Krmar, M.; Bucalovic, N.; Baucal, M.; Jovancevic, N.

    2010-01-01

    It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of X-ray photon spectra) should be monitored routinely; however a standardized non-invasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent X-ray lines registered after irradiation of some material by an X-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to distinguish individual X-ray fluorescence lines and high efficiency for the photon energies in the diagnostic region. Our initial measurements have demonstrated that the different ratios of the integral number of Compton scattered photons and intensities of K and L fluorescent lines detected by CdTe detector are sensitive function of maximal photon energy and could be successfully applied for kVp monitoring.

  8. CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

    CERN Document Server

    Fougeres, P; Hageali, M; Koebel, J M; Regal, R

    1999-01-01

    Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

  9. CdTe and CdZnTe detectors in nuclear medicine

    CERN Document Server

    Scheiber, C

    2000-01-01

    Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

  10. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  11. The role of contacts in semiconductor gamma radiation detectors

    International Nuclear Information System (INIS)

    Lachish, U.

    1998-01-01

    It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

  12. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  13. Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

    2017-01-30

    Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

  14. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  15. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P

    2010-01-01

    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  16. Measurement of ionising radiation semiconductor detectors: a review

    International Nuclear Information System (INIS)

    Aussel, J.P.

    1986-06-01

    Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

  17. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

    Energy Technology Data Exchange (ETDEWEB)

    Smith, L.; Murphy, J.W. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, J. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Rozhdestvenskyy, S.; Mejia, I. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Park, H. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Allee, D.R. [Flexible Display Center, Arizona State University, Phoenix, AZ 85284 (United States); Quevedo-Lopez, M. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B., E-mail: beg031000@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

    2016-12-01

    Solid-state neutron detectors offer an alternative to {sup 3}He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10{sup −6} gamma-ray efficiency.

  18. Pulse-height loss in the signal readout circuit of compound semiconductor detectors

    Science.gov (United States)

    Nakhostin, M.; Hitomi, K.

    2018-06-01

    Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

  19. Semiconductor neutron detectors based on new types of materials

    International Nuclear Information System (INIS)

    Pochet, T.; Foulon, F.

    1993-01-01

    Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

  20. An analytical X-ray CdTe detector response matrix for incomplete charge collection correction for photon energies up to 300 keV

    Science.gov (United States)

    Kurková, Dana; Judas, Libor

    2018-05-01

    Gamma and X-ray energy spectra measured with semiconductor detectors suffer from various distortions, one of them being so-called "tailing" caused by an incomplete charge collection. Using the Hecht equation, a response matrix of size 321 × 321 was constructed which was used to correct the effect of incomplete charge collection. The correction matrix was constructed analytically for an arbitrary energy bin and the size of the energy bin thus defines the width of the spectral window. The correction matrix can be applied separately from other possible spectral corrections or it can be incorporated into an already existing response matrix of the detector. The correction was tested and its adjustable parameters were optimized on the line spectra of 57Co measured with a cadmium telluride (CdTe) detector in a spectral range from 0 up to 160 keV. The best results were obtained when the values of the free path of holes were spread over a range from 0.4 to 1.0 cm and weighted by a Gauss function. The model with the optimized parameter values was then used to correct the line spectra of 152Eu in a spectral range from 0 up to 530 keV. An improvement in the energy resolution at full width at half maximum from 2.40 % ± 0.28 % to 0.96 % ± 0.28 % was achieved at 344.27 keV. Spectra of "narrow spectrum series" beams, N120, N150, N200, N250 and N300, generated with tube voltages of 120 kV, 150 kV, 200 kV, 250 kV and 300 kV respectively, and measured with the CdTe detector, were corrected in the spectral range from 0 to 160 keV (N120 and N150) and from 0 to 530 keV (N200, N250, N300). All the measured spectra correspond both qualitatively and quantitatively to the available reference data after the correction. To obtain better correspondence between N150, N200, N250 and N300 spectra and the reference data, lower values of the free paths of holes (range from 0.16 to 0.65 cm) were used for X-ray spectra correction, which suggests energy dependence of the phenomenon.

  1. Low frequency noise in semiconductor detectors

    International Nuclear Information System (INIS)

    Stojanovic, M.; Marjanovic, N.

    1998-01-01

    Noise characteristics of surface-barrier detectors based on Au contacts on n-Si were measured and analyzed. The metal layers were deposited by evaporation to 40-100 nm thickness. Standard surface-barrier detectors based on Au/Si structures are known to have favorable characteristics, but they tend to degrade with aging and under severe working conditions. Degradation is particularly related to the increase in noise level, leakage current and the reduction of detector efficiency and resolution. Therefore, practical applications of surface-barrier detectors demand their constant upgrading. Improvements of detector properties are concentrated mainly on the front surface and front (rectifying) contact. The aim was to improve the noise characteristics of the surface-barrier structures and retain the favorable detector properties of the Au/Si system. (authors)

  2. Development of a 32-detector CdTe matrix for the SVOM ECLAIRs X/Gamma camera: Preliminary results

    Energy Technology Data Exchange (ETDEWEB)

    Lacombe, K., E-mail: karine.lacombe@irap.omp.eu [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Nasser, G.; Amoros, C.; Atteia, J.-L.; Barret, D. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Billot, M. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Cordier, B.; Gevin, O. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Godet, O. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Gonzalez, F. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Houret, B.; Landé, J. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Lugiez, F. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Mandrou, P.; Martin, J.-A.; Marty, W. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Mercier, K. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Pons, R.; Rambaud, D.; Ramon, P. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); and others

    2013-12-21

    ECLAIRs, a 2D coded-mask imaging telescope on the Sino-French SVOM space mission, will detect and locate gamma-ray bursts (GRBs) between 4 and 150 keV. The detector array is an assembly of 6400 Schottky CdTe detectors of size 4×4×1 mm{sup 3}, biased from −100 V to −600 V and operated at −20 °C to minimize the leakage current and maximize the polarization time. The remarkable low-energy threshold is achieved through various steps: an extensive detectors selection, a low-noise 32 channels ASIC study, and the design of an innovative detection module called XRDPIX formed by a thick film ceramic holding 32 detectors, a high voltage grid and an HTCC substrate housing the ASIC within a hermetic cavity. In this paper, we describe the XRDPIX module and explain the results of first tests to measure the linearity and compare the sources of noise, such as leakage currents and the Equivalent Noise Charge (ENC) measured on ASIC Ceramics. We confront these values with the energy threshold and spectral resolution made with dedicated test benches. Finally, we present the superposition of 32 calibrated spectra of one XRDPIX module, showing the excellent homogeneity of the 32 detectors and the achievement of a detection threshold at 4 keV over the entire module. -- Highlights: •We develop X and gamma rays detection modules to shape a space telescope. •The main goal of 4 keV threshold is reached thanks to a new hybrid based on CdTe. •Great spectral performance depends on low equivalent noise charge of ASIC on ceramics. •We study the good linearity of the calibration curve below the 16 keV energy. •An outgassing stage will decrease the leakage current of detectors glued on ceramics.

  3. Fabrication and utilization of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Lemos Junior, Orlando Ferreira

    1969-01-01

    This paper describes the assembly of the equipment for the fabrication of Ge-Li drifted detectors and the technique used in the preparation of a Planar detector of 7 cm 2 x 0,5 cm for the Laboratory of the Linear Accelerator at the University of Sao Paulo, as well as the utilization of a 22 cm 3 coaxial detector for the analysis of fission product gamma rays at the Instituto de Engenharia Nuclear, Rio de Janeiro, R J, Brazil. (author)

  4. Electron injection in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Castoldi, A.; Vacchi, A.

    1990-01-01

    The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors. The structure allows on-line calibration of the drift velocity of electrons within the detector. The calibration is a practical method to trace the temperature dependence of the electron mobility. Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. 5 refs., 11 figs

  5. Application of imitation for energy calibration of silicon semiconductor detectors

    CERN Document Server

    Aivazyan, G M; Mikaelyan, M A

    2003-01-01

    An effective method is described for energy calibration of semiconductor detectors (SCD) with different thickness. The method is based on imitating the charge on the input of the preamplifier deposited in SCD by known energy ionizing particles, the imitation being performed by a pulser with a partial with use of alpha-active sources. The results of laboratory studies of the described method are given with detectors of either large, 50-1000 mu m, or small, 18-20 mu m, thickness

  6. Fast-timing methods for semiconductor detectors

    International Nuclear Information System (INIS)

    Spieler, H.

    1982-03-01

    The basic parameters are discussed which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  7. Status and problems of semiconductor detectors

    International Nuclear Information System (INIS)

    Walton, J.T.; Goulding, F.S.; Haller, E.E.; Pehl, R.H.

    1981-03-01

    A brief review is given of the types of silicon and germanium detectors used or presently being developed for nuclear experiments. Large-area silicon and germanium detector telescopes for use in long-range particle detection and identification are emphasized. Large area position-sensitive detectors are also described. Some results are presented regarding radiation damage and damage repair by annealing. Evidence is also presented for the importance of producing large area silicon crystals of adequate quality to reduce trapping problems to negligible proportions

  8. Fast timing methods for semiconductor detectors. Revision

    International Nuclear Information System (INIS)

    Spieler, H.

    1984-10-01

    This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  9. Status and problems of semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Walton, J.T.; Goulding, F.S.; Haller, E.E.; Pehl, R.H.

    1981-03-01

    A brief review is given of the types of silicon and germanium detectors used or presently being developed for nuclear experiments. Large-area silicon and germanium detector telescopes for use in long-range particle detection and identification are emphasized. Large area position-sensitive detectors are also described. Some results are presented regarding radiation damage and damage repair by annealing. Evidence is also presented for the importance of producing large area silicon crystals of adequate quality to reduce trapping problems to negligible proportions.

  10. Mercuric iodide semiconductor detectors encapsulated in polymeric resin

    Energy Technology Data Exchange (ETDEWEB)

    Martins, Joao F. Trencher; Santos, Robinson A. dos; Ferraz, Caue de M.; Oliveira, Adriano S.; Velo, Alexandre F.; Mesquita, Carlos H. de; Hamada, Margarida M., E-mail: mmhamada@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Disch, Christian; Fiederle, Michael [Albert-Ludwigs Universität Freiburg - UniFreibrug, Freiburg Materials Research Center - FMF, Freiburg (Germany)

    2015-07-01

    The development of new semiconductor radiation detectors always finds many setback factors, such as: high concentration of impurities in the start materials, poor long term stability, the surface oxidation and other difficulties discussed extensively in the literature, that limit their use. In this work was studied, the application of a coating resin on HgI2 detectors, in order to protect the semiconductor crystal reactions from atmospheric gases and to isolate electrically the surface of the crystals. Four polymeric resins were analyzed: Resin 1: 50% - 100%Heptane, 10% - 25% methylcyclohexane, <1% cyclohexane; Resin 2: 25% - 50% ethanol, 25% - 50% acetone, <2,5% ethylacetate; Resin 3: 50% - 100% methylacetate, 5% - 10% n-butylacetate; Resin 4: 50% - 100% ethyl-2-cyanacrylat. The influence of the polymeric resin type used on the spectroscopic performance of the HgI{sub 2} semiconductor detector is, clearly, demonstrated. The better result was found for the detector encapsulated with Resin 3. An increase of up to 26 times at the stability time was observed for the detectors encapsulated compared to that non-encapsulated detector. (author)

  11. Current responsivity of semiconductor superlattice THz-photon detectors

    DEFF Research Database (Denmark)

    Ignatov, Anatoly A.; Jauho, Antti-Pekka

    1999-01-01

    The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

  12. Semiconductor radiation detectors technology and applications

    CERN Document Server

    2018-01-01

    The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

  13. Measurement of neutron flux by semiconductor detector; Merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [The Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

    1965-07-01

    Using semiconductor detectors for measuring the neutron flux distribution is considered suitable and faster than using activation foils. Results of radial neutron flux distribution obtained by semiconductor detectors are presented.

  14. Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

    Science.gov (United States)

    Samedov, Victor V.

    2018-01-01

    Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

  15. Semiconductor tracker final integration and commissioning in the ATLAS detector

    International Nuclear Information System (INIS)

    Robichaud-Veronneau, Andree

    2008-01-01

    The SemiConductor Tracker (SCT) is part of the Inner Detector of the ATLAS experiment at the LHC. It is located between the Pixel detector and the Transition Radiation Tracker (TRT). During 2006 and 2007, the SCT was installed in its final position inside the ATLAS detector. The SCT barrel was lowered in 2006 and was tested for connectivity and noise. Common tests with the TRT to look for pick-up noise and grounding issues were also performed. The SCT end-caps were installed during summer 2007 and will undergo similar checks. The results from the various tests done before and after installation will be presented here.

  16. Semiconductors for room temperature nuclear detector applications

    CERN Document Server

    James, Ralph B

    1995-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The""Willardson and Beer""Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

  17. Energy response of neutron area monitor with silicon semiconductor detector

    International Nuclear Information System (INIS)

    Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

    1993-01-01

    A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

  18. 1-D position sensitive single carrier semiconductor detectors

    International Nuclear Information System (INIS)

    Zhong He; Knoll, G.F.; Wehe, D.K.; Rojeski, R.; Mastrangelo, C.H.; Hammig, M.; Barrett, C.; Uritani, A.

    1996-01-01

    A single polarity charge sensing method has been studied using coplanar electrodes on 5 mm cubes of CdZnTe γ-ray detectors. This method can ameliorate the hole trapping problem of room-temperature semiconductor detectors. Our experimental results confirm that the energy resolution is dramatically improved compared with that obtained using the conventional readout method, but is still about an order of magnitude worse than the theoretical limit. A method to obtain the γ-ray interaction depth between the cathode and the anode is presented here. This technique could be used to correct for the electron trapping as a function of distance from the coplanar electrodes. Experimental results showed that a position resolution of about 0.9 mm FWHM at 122 keV can be obtained. These results will be of interest in the design of higher performance room-temperature semiconductor γ-ray detectors. (orig.)

  19. Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

    Science.gov (United States)

    Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

    2016-05-01

    High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54

  20. Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

    Energy Technology Data Exchange (ETDEWEB)

    Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew, E-mail: andrew.karellas@umassmed.edu; Shi, Linxi; Gounis, Matthew J. [Department of Radiology, University of Massachusetts Medical School, Worcester, Massachusetts 01655 (United States); Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo [Istituto Nazionale di Fisica Nucleare (INFN), Pisa 56127, Italy and Pixirad Imaging Counters s.r.l., L. Pontecorvo 3, Pisa 56127 (Italy)

    2016-05-15

    Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54

  1. Semiconductor pixel detectors for digital mammography

    International Nuclear Information System (INIS)

    Novelli, M.; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S.

    2003-01-01

    We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown

  2. Semiconductor pixel detectors for digital mammography

    Energy Technology Data Exchange (ETDEWEB)

    Novelli, M. E-mail: marzia.novelli@pi.infn.it; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S

    2003-08-21

    We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown.

  3. Towards time-of-flight PET with a semiconductor detector

    Science.gov (United States)

    Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

    2018-02-01

    The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

  4. Cryostat for an well logging probe using a semiconductor detector

    International Nuclear Information System (INIS)

    Tapphorn, R.M.

    1978-01-01

    This invention proposes to construct an well logging tool of the type comprising a semiconductor radiation detector devoid of the defects usually observed. This aim is attained by means of a cryostat to cool a semiconductor radiation detector in a restricted space where the temperature is high. It includes a long box dimensioned to pass through a bore hole, a cryogenic chamber housed in the box, a vacuum chamber thermally insulating the cryogenic chamber and placed around it, a semiconductor radiation detector housed in the vacuum chamber in thermal contact with the cryogenic chamber and an active vacuum pump fitted in the box and connected to the vacuum chamber to maintain a vacuum in it. In an improved version, the vacuum pump is fitted outside the cryostat so that it operates independently of the temperature conditions in the cryostat. If the pump needs to be cooled to reduce the gas discharge, it can be fitted inside the cryostat and connected to the cryogenic chamber or a second cryostat can also be provided to cool the pump. The vacuum pump is designed to maintain the vacuum in the thermal insulation vacuum chamber at a desired figure, preferably 10 -4 Torr or under, in order to preserve the integrity of the thermal insulation layer around the cryogenic chamber and thereby extending the efficient operating period of the detector. The cryogenic material used is preferably of fusion resistant type such as Freon 22 [fr

  5. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  6. Development of an integrated response generator for Si/CdTe semiconductor Compton cameras

    International Nuclear Information System (INIS)

    Odaka, Hirokazu; Sugimoto, Soichiro; Ishikawa, Shin-nosuke; Katsuta, Junichiro; Koseki, Yuu; Fukuyama, Taro; Saito, Shinya; Sato, Rie; Sato, Goro; Watanabe, Shin

    2010-01-01

    We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.

  7. Characterization of paraffin based breast tissue equivalent phantom using a CdTe detector pulse height analysis.

    Science.gov (United States)

    Cubukcu, Solen; Yücel, Haluk

    2016-12-01

    In this study, paraffin was selected as a base material and mixed with different amounts of CaSO 4 ·2H 2 O and H 3 BO 3 compounds in order to mimic breast tissue. Slab phantoms were produced with suitable mixture ratios of the additives in the melted paraffin. Subsequently, these were characterized in terms of first half-value layer (HVL) in the mammographic X-ray range using a pulse-height spectroscopic analysis with a CdTe detector. Irradiations were performed in the energy range of 23-35 kV p under broad beam conditions from Mo/Mo and Mo/Rh target/filter combinations. X-ray spectra were acquired with a CdTe detector without and with phantom material interposition in increments of 1 cm thickness and then evaluated to obtain the transmission data. The net integral areas of the spectra for the slabs were used to plot the transmission curves and these curves were fitted to the Archer model function. The results obtained for the slabs were compared with those of standard mammographic phantoms such as CIRS BR series phantoms and polymethylmethacrylate plates (PMMA). From the evaluated transmission curves, the mass attenuation coefficients and HVLs of some mixtures are close to those of the commercially available standard mammography phantoms. Results indicated that when a suitable proportion of H 3 BO 3 and CaSO 4 ·2H 2 O is added to the paraffin, the resulting material may be a good candidate for a breast tissue equivalent phantom.

  8. A spectrometer filter for semiconductor and scintillation detectors

    International Nuclear Information System (INIS)

    Andronov, O.I.; Brovchenko, V.G.; Evdokimov, S.T.

    1995-01-01

    The paper describes an integrating low-pass filter which takes signals from a delay line. The filter changes triangular pulses into rectangular ones. The energy resolution of a semiconductor detector whose signal is processed by the filter is 15-20% better than using a common RC-filter. The integrator stores a charge due to the scintillation pulse during the integration time without loss. The energy and time resolution of the device with the spectrometer filter is better than with an RC-filter. The energy resolution of a bismuth-germanate detector in recording radiation from 137 Cs is 9.75%

  9. Application of imitation for energy calibration of silicon semiconductor detectors

    International Nuclear Information System (INIS)

    Aivazyan, G.M.; Badalyan, H.V.; Mikaelyan, M.A.

    2003-01-01

    An effective method is described for energy calibration of semiconductor detectors (SCD) with different thickness. The method is based on imitating the charge on the input of the preamplifier deposited in SCD by known energy ionizing particles, the imitation being performed by a pulser with a partial with use of α-active sources. The results of laboratory studies of the described method are given with detectors of either large, 50-1000μm, or small, 18-20 μm, thickness

  10. Palladium silicide - a new contact for semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Totterdell, D.H.J.

    1981-11-01

    Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

  11. Photon detector composed of metal and semiconductor nanoparticles

    International Nuclear Information System (INIS)

    Takahashi, Atsuo; Minoura, Norihiko; Karube, Isao

    2005-01-01

    Applying the function of the single electron transistor, a novel photon detector consisting of a self-assembled structure of metal and semiconductor nanoparticles and an organic insulating layer was developed. It showed coulomb blockade behavior under dark conditions and remarkable increase in current corresponding to light intensity under light irradiation. Ultraweak photon emission of about 600 counts per second in the ultraviolet region could be detected at room temperature by this photon counter

  12. Use of semiconductor detectors for radioactive waste account and control

    CERN Document Server

    Davydov, L N; Zakharchenko, A A

    2002-01-01

    The possibilities and development status of the contemporary semiconductor detectors and detecting devices intended for radiation monitoring at nuclear industry enterprises, including Chernobyl Shelter and depositories of nuclear wastes are shown. Such devices,created in the last years, can be successfully used for measurements of the gamma-radiation dose rate as well as for the isotope composition evaluation of nuclear materials and wastes, both during the work cycles and in emergency situations.

  13. On load resistor noise in preamplifiers for semiconductor detectors

    International Nuclear Information System (INIS)

    Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

    1975-01-01

    The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

  14. Present status and future trends of semiconductor detectors

    International Nuclear Information System (INIS)

    Lakatos, Tamas

    1988-01-01

    Some examples of the applications of semiconductor radiation detectors are briefly outlined, in order to illustrate development trends. The major parameters including energy resolution and dead time are discussed, and their improvement by the application of temporally varying parameter filters is pointed out. Development trends point toward low-loss signal processing by using adaptive filtering, possibly digital filtering. (R.P.) 14 refs.; 3 figs

  15. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Szeles, Csaba

    2004-01-01

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Radiation-hard semiconductor detectors for SuperLHC

    CERN Document Server

    Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

    2005-01-01

    An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

  17. New developments in clinical applications of CdTe and CdZnTe detectors

    International Nuclear Information System (INIS)

    Scheiber, C.

    1996-01-01

    This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

  18. Proposal for a semiconductor high resolution tracking detector

    International Nuclear Information System (INIS)

    Rehak, P.

    1983-01-01

    A 'new' concept for detection and tracking of charged particles in high energy physics experiments is proposed. It combines a well known high purity semiconductor diode detector (HPSDD) with a heterojunction structure (HJ) and a negative electron affinity (NEA) surface. The detector should be capable of providing a two dimensional view (few cm 2 ) of multi-track events with the following properties: a) position resolution down to a few μm (10 8 position elements); b) high density of information (10 2 -10 3 dots per mm of minimum ionizing track); c) high rate capabilities (few MHz); d) live operation with options to be triggered and/or the information from the detector can be used as an input for the decision to record an event. (orig.)

  19. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    International Nuclear Information System (INIS)

    Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

    2009-01-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

  20. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    Science.gov (United States)

    Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

    2009-08-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

  1. Semiconductor Pixel detectors and their applications in life sciences

    International Nuclear Information System (INIS)

    Jakubek, J

    2009-01-01

    Recent advances in semiconductor technology allow construction of highly efficient and low noise pixel detectors of ionizing radiation. Steadily improving quality of front end electronics enables fast digital signal processing in each pixel which offers recording of more complete information about each detected quantum (energy, time, number of particles). All these features improve an extend applicability of pixel technology in different fields. Some applications of this technology especially for imaging in life sciences will be shown (energy and phase sensitive X-ray radiography and tomography, radiography with heavy charged particles, neutron radiography, etc). On the other hand a number of obstacles can limit the detector performance if not handled. The pixel detector is in fact an array of individual detectors (pixels), each of them has its own efficiency, energy calibration and also noise. The common effort is to make all these parameters uniform for all pixels. However an ideal uniformity can be never reached. Moreover, it is often seen that the signal in one pixel can affect the neighbouring pixels due to various reasons (e.g. charge sharing). All such effects have to be taken into account during data processing to avoid false data interpretation. A brief view into the future of pixel detectors and their applications including also spectroscopy, tracking and dosimetry is given too. Special attention is paid to the problem of detector segmentation in context of the charge sharing effect.

  2. A semiconductor parameter analyzer for ionizing radiation detectors

    International Nuclear Information System (INIS)

    Santos, Luiz A.P.

    2009-01-01

    Electrometers and ion chamber are normally used to make several types of measurements in a radiation field and there is a unique voltage applied to each detector type. Some electronic devices that are built of semiconductor materials like silicon crystal can also be used for the same purpose. In this case, a characteristic curve of the device must be acquired to choose an operation point which consists of an electrical current or voltage to be applied to the device. Unlike ion chambers, such an electronic device can have different operation points depending on its current versus voltage curve (I x V). The best operation point of the device is also a function of the radiation, energy, dose rate and fluence. The purpose of this work is to show a semiconductor parameter analyzer built to acquire I x V curves as usually, and the innovation here is the fact that it can be used to obtain such a parametric curve when a quad-polar device is under irradiation. The results demonstrate that the system is a very important tool to scientists interested to evaluate a semiconductor detector before, during and after irradiation. A collection of results for devices under an X-ray beam and a neutron fluence are presented: photodiode, phototransistors, bipolar transistor and MOSFET. (author)

  3. Size-selective precipitation in colloidal semiconductor nanocrystals of CdTe and CdSe: a study by UV-VIS spectroscopy; Precipitacao seletiva de tamanhos em nanoparticulas semicondutoras coloidais de CdTe e CdSe: um estudo por espectroscopia UV-VIS

    Energy Technology Data Exchange (ETDEWEB)

    Viol, Livia Cristina de Souza; Silva, Fernanda Oliveira; Ferreira, Diego Lourenconi; Alves, Jose Luiz Aarestrup; Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.b [Universidade Federal de Sao Joao del Rei, MG (Brazil). Dept. de Ciencias Naturais

    2011-07-01

    The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis). It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well. (author)

  4. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-10-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μ W. In acquisition mode, the total power consumption of every pixel is 200 μ W. An equivalent noise charge (ENC) of 160 e - RMS at maximum gain and negative polarity conditions has been measured at room temperature.

  5. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs)

    International Nuclear Information System (INIS)

    Fronk, Ryan G.; Bellinger, Steven L.; Henson, Luke C.; Ochs, Taylor R.; Smith, Colten T.; Kenneth Shultis, J.; McGregor, Douglas S.

    2015-01-01

    Microstructured semiconductor neutron detectors (MSNDs) have in recent years received much interest as high-efficiency replacements for thin-film-coated thermal neutron detectors. The basic device structure of the MSND involves micro-sized trenches that are etched into a vertically-oriented pvn-junction diode that are backfilled with a neutron converting material. Neutrons absorbed within the converting material induce fission of the parent nucleus, producing a pair of energetic charged-particle reaction products that can be counted by the diode. The MSND deep-etched microstructures produce good neutron-absorption and reaction-product counting efficiencies, offering a 10× improvement in intrinsic thermal neutron detection efficiency over thin-film-coated devices. Performance of present-day MSNDs are nearing theoretical limits; streaming paths between the conversion-material backfilled trenches, allow a considerable fraction of neutrons to pass undetected through the device. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs) have been developed that utilize a complementary second set of trenches on the back-side of the device to count streaming neutrons. DSMSND devices are theoretically capable of greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. The first such prototype DSMSNDs, presented here, have achieved 29.48±0.29% nearly 2× better than MSNDs with similar microstructure dimensions.

  6. Spectral correction algorithm for multispectral CdTe x-ray detectors

    DEFF Research Database (Denmark)

    Christensen, Erik D.; Kehres, Jan; Gu, Yun

    2017-01-01

    Compared to the dual energy scintillator detectors widely used today, pixelated multispectral X-ray detectors show the potential to improve material identification in various radiography and tomography applications used for industrial and security purposes. However, detector effects, such as charge...

  7. Study of a new architecture of gamma cameras with Cd/ZnTe/CdTe semiconductors; Etude d'une nouvelle architecture de gamma camera a base de semi-conducteurs CdZnTe /CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Guerin, L

    2007-11-15

    This thesis studies new semi conductors for gammas cameras in order to improve the quality of image in nuclear medicine. The chapter 1 reminds the general principle of the imaging gamma, by describing the radiotracers, the channel of detection and the types of Anger gamma cameras acquisition. The physiological, physical and technological limits of the camera are then highlighted, to better identify the needs of future gamma cameras. The chapter 2 is dedicated to a bibliographical study. At first, semi-conductors used in imaging gamma are presented, and more particularly semi-conductors CDTE and CdZnTe, by distinguishing planar detectors and monolithic pixelated detectors. Secondly, the classic collimators of the gamma cameras, used in clinical routine for the most part of between them, are described. Their geometry is presented, as well as their characteristics, their advantages and their inconveniences. The chapter 3 is dedicated to a state of art of the simulation codes dedicated to the medical imaging and the methods of reconstruction in imaging gamma. These states of art allow to introduce the software of simulation and the methods of reconstruction used within the framework of this thesis. The chapter 4 presents the new architecture of gamma camera proposed during this work of thesis. It is structured in three parts. The first part justifies the use of semiconducting detectors CdZnTe, in particular the monolithic pixelated detectors, by bringing to light their advantages with regard to the detection modules based on scintillator. The second part presents gamma cameras to base of detectors CdZnTe (prototypes or commercial products) and their associated collimators, as well as the interest of an association of detectors CdZnTe in the classic collimators. Finally, the third part presents in detail the HiSens architecture. The chapter 5 describes both software of simulation used within the framework of this thesis to estimate the performances of the Hi

  8. Stable room-temperature thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

    2017-10-01

    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  9. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta

    2017-10-01

    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  10. Measurement of neutron flux distribution by semiconductor detector

    International Nuclear Information System (INIS)

    Obradovic, D.; Bosevski, T.

    1964-01-01

    Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable

  11. Testing in a stratospheric balloon of a semiconductor detector altimeter

    International Nuclear Information System (INIS)

    Gilly, L.; Jourdan, P.

    1968-01-01

    An altimeter containing a semiconductor detector has been operated on flight. We have used a stratospheric balloon launched from AIRE-SUR-ADOUR with the C.N.E.S. collaboration. During this assay two apparatus have been used. The first allowed to follow the balloon during its ascension and descent, the second to follow its evolution at its maximum altitude. Informations transmitted by radio and recorded on Magnetophon, have been studied after the flight. Results are identical with these given by the barometer used by the C.N.E.S. in this essay. (authors) [fr

  12. Semiconductor micropattern pixel detectors a review of the beginnings

    CERN Document Server

    Heijne, Erik H M

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with µW power on a pixel area of less than 0.04 mm2, retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at > 10 MHz rates with unambiguous track reconstruction even at particle multiplicities > 10 cm-2. The noise in a channel was ~100 e- r.m.s. and enabled binary operation with random noise 'hits' at a level 30 Mrad, respectively.

  13. Detection of secondary electrons with pixelated hybrid semiconductor detectors

    International Nuclear Information System (INIS)

    Gebert, Ulrike Sonja

    2011-01-01

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10 -5 mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm 2 area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm 2 . To achieve this, a new photocathode was mounted in a shorter distance to the detector. The measurements where

  14. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    Energy Technology Data Exchange (ETDEWEB)

    Betin, J; Zhabin, E; Krampit, I; Smirnov, V

    1980-04-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc.

  15. Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

    CERN Document Server

    Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

    2002-01-01

    High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

  16. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  17. Performance of semiconductor radiation sensors for simple and low-cost radiation detector

    International Nuclear Information System (INIS)

    Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

    2008-01-01

    In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

  18. Use of various device geometries to improve the performance of CdTe detectors

    International Nuclear Information System (INIS)

    Zanio, K.

    1977-01-01

    Cadmium telluride detectors were fabricated from semi-insulating material (rho>10 7 Ω.cm) with different geometries. So as to take advantages of the superior mobility-trapping time products of electrons (equal to 6.10x10 -4 cm 2 /V) as compared to those of holes approximately 5x10 -6 cm 2 /V) and suit different ranges of photon energies. In the case of X-ray detectors, plane parallel devices were fabricated with active areas up to 3cm 2 . For the case of high energy more penetrating radiation, cube shaped detectors, having nonuniform electric fields, were fabricated. Arrays were also made from such cubes to evaluate their potential use in imaging applications at room temperature. Where a small frontal area but high efficiency is required, such as in ablation studies for reentry vehicles, bar-shaped detectors, 3mmx7mm and up to 2cm in length are appropriate and were also fabricated

  19. Analysis of MCNP simulated gamma spectra of CdTe detectors for boron neutron capture therapy.

    Science.gov (United States)

    Winkler, Alexander; Koivunoro, Hanna; Savolainen, Sauli

    2017-06-01

    The next step in the boron neutron capture therapy (BNCT) is the real time imaging of the boron concentration in healthy and tumor tissue. Monte Carlo simulations are employed to predict the detector response required to realize single-photon emission computed tomography in BNCT, but have failed to correctly resemble measured data for cadmium telluride detectors. In this study we have tested the gamma production cross-section data tables of commonly used libraries in the Monte Carlo code MCNP in comparison to measurements. The cross section data table TENDL-2008-ACE is reproducing measured data best, whilst the commonly used ENDL92 and other studied libraries do not include correct tables for the gamma production from the cadmium neutron capture reaction that is occurring inside the detector. Furthermore, we have discussed the size of the annihilation peaks of spectra obtained by cadmium telluride and germanium detectors. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Response function of semiconductor detectors, Ge and Si(Li)

    International Nuclear Information System (INIS)

    Zevallos Chavez, Juan Yury

    2003-01-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm 3 , 50 cm 3 , 8 cm 3 and 5 cm 3 , and one Si(Li) with 0.143 cm 3 of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  1. Property of a CZT semiconductor detector for radionuclide identification

    International Nuclear Information System (INIS)

    Chun, Sung-Dae; Park, Se-Hwan; Ha, Jang Ho; Kang, Sang Mook; Lee, Dong Hoon; Kim, Yong Kyun; Cho, Yun Ho; Kim, Jong Kyung; Hong, Duk-Geun

    2008-01-01

    Compound semiconductors of high Z value material have been studied intensively for X-ray and γ-ray spectroscopy at room temperature. CdZnTe has wide band gap energy as 1.6 eV and can provide high quantum efficiency with reasonably good energy resolution at room temperature. This study is aimed at determining radionuclide analysis ability by measuring energy resolution of CZT detector which will be applied at nuclear material identification purpose. For experiment we used a CZT detector (5 x 5 x 5 mm 3 ) which is manufactured by eV Products. We have performed our measurement at varied temperatures similar to the outdoor environment for the investigation about temperature dependence of energy resolution and peak centroid fluctuation of CZT detector by using gas cooling and Peltier cooling methods. In order to test radionuclide identification we used various radionuclide samples; plutonium, europium and other standard sources. Pulse height spectra were obtained by standard electronics which consists of a preamplifier, a shaping amplifier, and a multi-channel analyzer. (author)

  2. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

    2018-02-01

    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  3. Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

    International Nuclear Information System (INIS)

    Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

    2005-01-01

    A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

  4. X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet-Boudet, N.

    1996-10-07

    This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

  5. Fast photoconductor CdTe detectors for synchrotron x-ray studies

    International Nuclear Information System (INIS)

    Yoo, Sung Shik; Faurie, J.P.; Huang Qiang; Rodricks, B.

    1993-09-01

    The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 μm between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device's response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors

  6. Development and characterization of the lead iodide semiconductor detector

    International Nuclear Information System (INIS)

    Oliveira, Icimone Braga de

    2001-01-01

    A methodology for purification and growth of PbI 2 crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ( 241 Am) alpha particle and ( 241 Am, 57 Co, 133 Ba and 137 Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for 241 Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI 2 crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

  7. Determining dose rate with a semiconductor detector - Monte Carlo calculations of the detector response

    Energy Technology Data Exchange (ETDEWEB)

    Nordenfors, C

    1999-02-01

    To determine dose rate in a gamma radiation field, based on measurements with a semiconductor detector, it is necessary to know how the detector effects the field. This work aims to describe this effect with Monte Carlo simulations and calculations, that is to identify the detector response function. This is done for a germanium gamma detector. The detector is normally used in the in-situ measurements that is carried out regularly at the department. After the response function is determined it is used to reconstruct a spectrum from an in-situ measurement, a so called unfolding. This is done to be able to calculate fluence rate and dose rate directly from a measured (and unfolded) spectrum. The Monte Carlo code used in this work is EGS4 developed mainly at Stanford Linear Accelerator Center. It is a widely used code package to simulate particle transport. The results of this work indicates that the method could be used as-is since the accuracy of this method compares to other methods already in use to measure dose rate. Bearing in mind that this method provides the nuclide specific dose it is useful, in radiation protection, since knowing what the relations between different nuclides are and how they change is very important when estimating the risks

  8. Electrical characterization of CdTe pixel detectors with Al Schottky anode

    International Nuclear Information System (INIS)

    Turturici, A.A.; Abbene, L.; Gerardi, G.; Principato, F.

    2014-01-01

    Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage (I–V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current–voltage characteristics

  9. Position sensitive detector with semiconductor and image electron tube comprising such a detector

    International Nuclear Information System (INIS)

    Roziere, Guy.

    1977-01-01

    This invention concerns a position sensitive detector comprising a semiconducting substrate. It also concerns the electron tubes in which the detector may be incorporated in order to obtain an image formed at the tube input by an incident flux of particles or radiation. When a charged particle or group of such particles, electrons in particular, enter the space charge region of an inversely biased semiconductor diode, the energy supplied by these particles releases in the diode a certain number of electron-hole pairs which move in the field existing in the area towards the diode contacts. A corresponding current arises in the connections of this diode which constitutes the signal corresponding to the incident energy. Such a tube or chain of tubes is employed in nuclear medicine for observing parts of the human body, particularly by gamma radiation [fr

  10. Amplifier channel for a fission fragment semiconductor detector

    International Nuclear Information System (INIS)

    Tyurin, G.P.

    1981-01-01

    To compensate the decrease of the transformation coefficient of fission fragment semiconductor detector (SCD) developed is a special amplification channel with controlled transfer coefficient. The block diagram of the channel is presented, the main functional units of which are as follows: preamplifying head with charge-sensitive and timing preamplifiers, linear amplifier and the circuit of spectrum position stabilization, which includes a differential discriminator, integrator and reference signal generator. The amplification channel is made in the CAMAC standard and has the following specifications: dinamical input capacitance of charge-sensitive amplifier c=10000 n PHI, signal amplitude at output of the linear amplifier at energy of fission fragments of 120 MeV has negative polarity and is equal to 5 V. Pulse amplitude change at SCD sensitivity decrease to 50% constitutes not more than 1%. Timing preamplifier has the gain factor at voltage of K=80 at front duration of 3.5 nc. Time resolution of the amplification channel is not worse than 1 nc. Dimensions of preamplifying head are 40x40x15 mm. The amplification channel permitted to use SCD for long-term measurements of fission fragment spectra [ru

  11. Semiconductor micropattern pixel detectors: a review of the beginnings

    International Nuclear Information System (INIS)

    Heijne, E.H.M.

    2001-01-01

    The innovation in monolithic and hybrid semiconductor 'micropattern' or 'reactive' pixel detectors for tracking in particle physics was actually to fit logic and pulse processing electronics with μW power on a pixel area of less than 0.04 mm 2 , retaining the characteristics of a traditional nuclear amplifier chain. The ns timing precision in conjunction with local memory and logic operations allowed event selection at >10 MHz rates with unambiguous track reconstruction even at particle multiplicities >10 cm -2 . The noise in a channel was ∼100e - rms and enabled binary operation with random noise 'hits' at a level -8 . Rectangular pixels from 75 μmx500 μm down to 34 μmx125 μm have been used by different teams. In binary mode a tracking precision from 6 to 14 μm was obtained, and using analog interpolation one came close to 1 μm. Earlier work, still based on charge integrating imaging circuits, provided a starting point. Two systems each with more than 1 million sensor + readout channels have been built, for WA97-NA57 and for the Delphi very forward tracker. The use of 0.5 μm and 0.25 μm CMOS and enclosed geometry for the transistors in the pixel readout chips resulted in radiation hardness of ∼2 Mrad, respectively, >30 Mrad

  12. On selecting a sensitive region thickness of a silicon semiconductor detector for operation under counting conditions

    International Nuclear Information System (INIS)

    Pronkin, N.S.; Khakhalin, V.V.

    1972-01-01

    The paper discusses the selection of a thickness of a sensitive area of a silicon semiconductor detector, used in the count regime based on the signal to noise ratio and β-radiation registration efficiency. (author)

  13. Investigations on commercial semiconductor diodes as possible high dose rate radiation detectors

    International Nuclear Information System (INIS)

    Breitenhuber, L.; Kindl, P.; Obenaus, B.

    1992-12-01

    Investigations concerning the relevant properties of commercial semiconductor diodes such as their sensitivity and its dependence on accumulated dose, dose rate, energy, temperature and direction have been made in order to obtain their usefullness as radiation detectors. (authors)

  14. Performance and operation experience of the Atlas Semiconductor Tracker and Pixel Detector at the LHC.

    CERN Document Server

    Stanecka, E; The ATLAS collaboration

    2013-01-01

    After more than 3 years of successful operation at the LHC, we report on the operation and performance of the ATLAS Pixel Detector and Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment.

  15. Industrial workshop on LASL semiconductor radiation-detector research and development

    International Nuclear Information System (INIS)

    Endebrock, M.

    1978-11-01

    An Industrial Workshop on LASL Semiconductor Radiation Detector Research and Development was held at the Los Alamos Scientific Laboratory (LASL) in the spring of 1977. The purpose was to initiate communication between our detector research and development program and industry. LASL research programs were discussed with special emphasis on detector problems. Industrial needs and capabilities in detector research and development were also presented. Questions of technology transfer were addressed. The notes presented here are meant to be informal, as were the presentations

  16. Edge effects in a small pixel CdTe for X-ray imaging

    Science.gov (United States)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  17. Semiconductor detectors in current energy dispersive X-ray spectral analysis

    International Nuclear Information System (INIS)

    Betin, J.; Zhabin, E.; Krampit, I.; Smirnov, V.

    1980-01-01

    A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc. (M.S.)

  18. Flux distribution by neutrons semi-conductors detectors during the startup of the EL4 reactor

    International Nuclear Information System (INIS)

    Fuster, S.; Tarabella, A.

    1967-01-01

    The Cea developed neutron semi-conductors detectors which allows a quasi-instantaneous monitoring of neutrons flux distribution, when placed in a reactor during the tests. These detectors have been experimented in the EL4 reactor. The experiment and the results are presented and compared with reference mappings. (A.L.B.)

  19. Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2017-03-15

    This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

    International Nuclear Information System (INIS)

    Shah, K.S.; Lund, J.C.; Olschner, F.

    1990-01-01

    The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

  1. Optical characterization of wide-gap detector-grade semiconductors

    International Nuclear Information System (INIS)

    Elshazly, E.S.

    2011-01-01

    Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd 1-x Zn x Te, x∼0.1) and Thallium Bromide (Tl Br), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and Tl Br as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064 nm wavelength and 7 ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300 K to 110 K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (Tl Br) and compared with the results for cadmium zinc telluride (CZT) in

  2. Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

    2005-01-01

    The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

  3. The use of GaSe semiconductor detectors for monitoring high energy muon beams

    CERN Document Server

    Mancini, A M; Murri, R; Quirini, A; Rizzo, A; Vasanelli, L

    1976-01-01

    GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).

  4. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  5. Semiconductor scintillator detector for gamma radiation; Detector cintilador semicondutor para radiacao gama

    Energy Technology Data Exchange (ETDEWEB)

    Laan, F.T.V. der; Borges, V.; Zabadal, J.R.S., E-mail: ftvdl@ufrgs.br, E-mail: borges@ufrgs.br, E-mail: jorge.zabadal@ufrgs.br [Universidade Federal do Rio Grande do Sul (GENUC/DEMEC/UFRGS), Porto Alegre, RS (Brazil). Grupo de Estudos Nucleares. Departamento de Engenharia Mecanica

    2015-07-01

    Nowadays the devices employed to evaluate individual radiation exposition are based on dosimetric films and thermoluminescent crystals, whose measurements must be processed in specific transductors. Hence, these devices carry out indirect measurements. Although a new generation of detectors based on semiconductors which are employed in EPD's (Electronic Personal Dosemeters) being yet available, it high producing costs and large dimensions prevents the application in personal dosimetry. Recent research works reports the development of new detection devices based on photovoltaic PIN diodes, which were successfully employed for detecting and monitoring exposition to X rays. In this work, we step forward by coupling a 2mm anthracene scintillator NE1, which converts the high energy radiation in visible light, generating a Strong signal which allows dispensing the use of photomultipliers. A low gain high performance amplifier and a digital acquisition device are employed to measure instantaneous and cumulative doses for energies ranging from X rays to Gamma radiation up to 2 MeV. One of the most important features of the PIN diode relies in the fact that it can be employed as a detector for ionization radiation, since it requires a small energy amount for releasing electrons. Since the photodiode does not amplify the corresponding photon current, it must be coupled to a low gain amplifier. Therefore, the new sensor works as a scintillator coupled with a photodiode PIN. Preliminary experiments are being performed with this sensor, showing good results for a wide range of energy spectrum. (author)

  6. Instrumentation for characterizing materials and composed semiconductors for ionizing radiation detectors

    International Nuclear Information System (INIS)

    Paschoal, Arquimedes J.A.; Leite, Adolfo M.B.; Nazzre, Fabio V.B.; Santos, Luiz A.P.

    2007-01-01

    The purpose of this work is the development of instrumentation for characterizing some type of ionizing radiation detectors. Those detectors are being manufactured by the Nuclear Instrumentation Laboratory at CRCN/Recife and can be used both on photon beam and with particles. Such detectors consist of semiconductor material in the form of films generated by oxide growing or by means of semiconductor material deposition in a substrate. Those materials can be made of metals, semi-metals, composites or semiconductor polymers. Prior to expose those detectors to ionizing radiation, it must be physically and electrically characterized. In this intention it was developed an electromechanical system. An electrical circuit was built to measure the signal from the detector and another circuit to control the movement of four probes (4-points technique) by using a stepper motor and the micro stepping technique avoiding damage to the detector. This system can be of interest to researchers that work with a sort of semiconductor materials in the form of thin film and in nanotechnological processes aiming the design of radiation ionizing detectors. (author)

  7. Experimental investigation of energy resolution in a semiconductor detector (surface barrier and Si (Li) detector) in the detection of protons

    International Nuclear Information System (INIS)

    Nordborg, C.

    1974-05-01

    The action of electronic effects on the energy resolution of the detector is investigated. The results are applicable not only to protons but also to heavier charged particles. It should be possible to reach a resolution of about 6 to 7 keV for 10 MeV protons with electronic detectors. Magnetic spectrometers could achieve a resolution of 2 to 3 keV. It is convenient to use Peltier elements for cooling semiconductor spectrometers. (Auth.)

  8. Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

    International Nuclear Information System (INIS)

    Abbene, L; Gerardi, G; Raso, G; Brai, M; Principato, F; Basile, S

    2013-01-01

    New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive-feedback preamplifiers, highlight the excellent performance of the system both at low and high rate environments (up to 800 kcps). A comparison with a conventional analog electronics showed the better high-rate capabilities of the digital approach, in terms of energy resolution and throughput. These results make the proposed DPP system a very attractive tool for both laboratory research and for the development of advanced detection systems for high-rate-resolution spectroscopic imaging, recently proposed in diagnostic medicine, industrial imaging and security screening

  9. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  10. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  11. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  12. Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

    International Nuclear Information System (INIS)

    Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

    2013-01-01

    The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

  13. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  14. High-speed imaging at high x-ray energy: CdTe sensors coupled to charge-integrating pixel array detectors

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian; Tate, Mark W.; Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Purohit, Prafull [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Chamberlain, Darol [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

    2016-07-27

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.

  15. CdTe quantum dots for an application in the life sciences

    International Nuclear Information System (INIS)

    Thuy, Ung Thi Dieu; Toan, Pham Song; Chi, Tran Thi Kim; Liem, Nguyen Quang; Khang, Dinh Duy

    2010-01-01

    This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1

  16. Temperature distribution model for the semiconductor dew point detector

    Science.gov (United States)

    Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

    2001-08-01

    The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

  17. Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

    Directory of Open Access Journals (Sweden)

    Brodyn, M.S.

    2014-03-01

    Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

  18. Study on effects of gamma-ray irradiation on TlBr semiconductor detectors

    International Nuclear Information System (INIS)

    Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

    2016-01-01

    Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60 Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137 Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy. (author)

  19. Prototype of the stacked CdZnTe semiconductor detector for 16N measurement

    International Nuclear Information System (INIS)

    Nishizawa, Hiroshi; Inujima, Hiroshi; Fujiwara, Hirotsugu; Nakamura, Hiroaki

    2001-01-01

    Prototype of the Stacked CdZnTe Semiconductor Detector for Measurement The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13 MeV γ-ray from 16 N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137 Cs and 60 Co, and 16 N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident γ-ray energy and its intensity ratio was identified and that the energy of 6 MeV γ-ray could be measured by the prototype of the stacked detector. (author)

  20. Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

    International Nuclear Information System (INIS)

    Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

    2012-01-01

    A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

  1. Application of CdTe for the NeXT mission

    International Nuclear Information System (INIS)

    Takahashi, Tadayuki; Nakazawa, Kazuhiro; Watanabe, Shin; Sato, Goro; Mitani, Takefumi; Tanaka, Takaaki; Oonuki, Kousuke; Tamura, Ken'ichi; Tajima, Hiroyasu; Kamae, Tuneyoshi; Madejski, Greg; Nomachi, Masaharu; Fukazawa, Yasushi; Makishima, Kazuo; Kokubun, Motohide; Terada, Yukikatsu; Kataoka, Jun; Tashiro, Makoto

    2005-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. The high-atomic number of the materials (Z Cd =48,Z Te =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (E g =1.5eV) allows to operate the detector at room temperature. Based on recent achievements in high-resolution CdTe detectors, in the technology of ASICs and in bump-bonding, we have proposed the novel hard X-ray and γ-ray detectors for the NeXT mission in Japan. The high-energy response of the super mirror onboard NeXT will enable us to perform the first sensitive imaging observations up to 80keV. The focal plane detector, which combines a fully depleted X-ray CCD and a pixellated CdTe detector, will provide spectra and images in the wide energy range from 0.5 to 80keV. In the soft γ-ray band up to ∼ 1MeV, a narrow field-of-view Compton γ-ray telescope utilizing several tens of layers of thin Si or CdTe detector will provide precise spectra with much higher sensitivity than present instruments. The continuum sensitivity will reach several x10 -8 photons -1 keV -1 cm -2 in the hard X-ray region and a few x10 -7 photons -1 keV -1 cm -2 in the soft γ-ray region

  2. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  3. Study of semiconductor detectors applied to diagnostic X-ray

    International Nuclear Information System (INIS)

    Salgado, Cesar Marques

    2003-08-01

    This work aims an evaluation of procedures for photons spectrum determination, produced by a X ray tube, normally used for medical diagnoses which operation voltage ranges from 20 to 150 kVp, to allow more precise characterization of the photon beam. The use of spectrum analysis will contribute to reduce the uncertainty in the ionization camera calibrations. For this purpose, two kind of detectors were selected, a Cadmium Zinc Telluride (CZT) and a planar HPGe detector. The X ray interaction with the detector's crystal produces, by electronic processes, a pulse high distribution as an output, which is no the true photon spectrum, due to the presence of K shell escape peaks, Compton scattering and to the fact that the detectors efficiency diminish rapidly with the increase of the photon energy. A detailed analysis of the contributing factors to distortions in the spectrum is necessary and was performed by Monte Carlo calculation with the MCNP 4B computer code. In order to determine the actual photon spectrum for a X ray tube a spectra stripping procedure is described for the HPGe detector. The detector's response curves, determined by the Monte Carlo calculation, were compared to the experimental ones, for isotropic point sources. For the methodology validation, stripped spectra were compared to the theoretical ones, for the same X ray tube's settings, for a qualitative evaluation. The air kerma rate calculated with the photon spectra were compared to the direct measurement using an ionization chamber, for a quantitative evaluation. (author)

  4. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

  5. Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

    International Nuclear Information System (INIS)

    Franc, J.; Kubat, J.; Grill, R.; Dedic, V.; Hlidek, P.; Moravec, P.; Belas, E.

    2011-01-01

    Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

  6. Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

    Science.gov (United States)

    Franc, J.; Kubát, J.; Grill, R.; Dědič, V.; Hlídek, P.; Moravec, P.; Belas, E.

    2011-05-01

    Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

  7. Characterisation of semiconductor materials for ionising radiation detectors

    International Nuclear Information System (INIS)

    Vaitkus, J.; Gaubas, E.; Jasinskaite, R.; Juska, G.; Kazukauskas, V.; Puras, R.; Rahman, M.; Sakalauskas, S.; Smith, K.

    2002-01-01

    Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different 'classical' material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods

  8. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    Science.gov (United States)

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. Spectrometer based on the silicon semiconductor detectors for a study of the two charged particles correlation

    International Nuclear Information System (INIS)

    Krumsztein, Z.W.; Siemiarczuk, T.; Szawlowski, M.

    1974-01-01

    The spectrometer based on the silicon semiconductor detectors for a study of the correlation between two charged particles is described. The results of the time resolution and particles identification measurements are presented. The tests were performed in the proton beam of the JINR synchrocyclotron. (author)

  10. Search for strongly interacting massive particles using semiconductor detectors on the ground

    International Nuclear Information System (INIS)

    Derbin, A.V.; Egorov, A.I.; Bakhlanov, S.V.; Muratova, V.N.

    1999-01-01

    Using signals from recoil nucleus in semiconductor detectors, search for strongly interacting massive particles, as a possible candidate for dark matter, is continued. Experimental installation and the experimental results are given. New limits on the possible masses and cross sections of strongly interacting massive particles are presented [ru

  11. Experimental confirmation of a new semiconductor detector principle

    International Nuclear Information System (INIS)

    Kemmer, J.; Lutz, G.; Schuster, K.; Sterzik, M.; Strueder, L.; Prechtel, U.; Ziemann, T.

    1990-01-01

    A new detector-amplification principle proposed by Kemmer and Lutz in 1986 has been experimentally verified. Outstanding features of this device are the built-in amplification, the signal charge storage capability and the possibility of repeated non-destructive readout. The device was used for detection of X-rays from a 241 Am and from an 55 Fe source. Very low noise figures (σ=30 electrons corresponding to an energy resolution of FWHM=250 eV at 6 keV energy) have been obtained at room temperature. Various applications of the structure either as detector or as purely electronic element are possible. One of the most intriguing is the use as a pixel detector with random access non-destructive readout. This device may be operated at very low power, as only reading (of one single pixel at a time), not storing, consumes power. Further options of the device are fast clearing, gating and variation of the pixel size during readout. The latter property can be used to drastically increase the readout speed compared to more standard two dimensional devices as e.g. CCD detectors, as one may restrict the high density readout to regions of interest determined beforehand by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor by a coarse scan of the whole detector. An alternative use of the device is as an analog or digital memory, or as a simple transistor with drastically reduced parasitic capacitances. Possible further developments are the combination with a novel three dimensional analog storage device which may either be used as a detector with built-in storage of several charge images or as a three-dimensional analog memory. (orig.)

  12. Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

    Science.gov (United States)

    McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

    2010-12-21

    Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

  13. On the Theory of Compensation in Lithium drifted Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A

    1969-04-15

    The lithium ion drift method produces detectors with a highly but not perfectly compensated intrinsic region. The amount of fixed space charge left in the depleted layer and its dependence on drift and clean-up parameters is of great practical interest. The imperfect compensation is mainly due to the presence in the depletion layer of thermally generated electron-hole pairs swept apart by the voltage applied to the detector during drift. A theoretical model is developed which takes into account the influence on the fixed space charge of mobile carrier generation and recombination. When recombination of free electrons and holes is negligible the theory predicts the formation of linear space charge gradients. When recombination is strong a constant space charge throughout a large part of the compensated layer may result. The theoretical calculations are compared with experimental findings. The influence of space charge on detector performance is discussed.

  14. Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test

    CERN Document Server

    AUTHOR|(CDS)2091318; Stamoulis, G; Vavougios, D

    The Beam Loss Monitoring system of the Large Hadron Collider is responsible for the pro- tection of the machine from damage and for the prevention of a magnet quench. Near the interaction points of the LHC, in the triplet magnets area, the BLMs are sensitive to the collision debris, limiting their ability to distinguish beam loss signal from signal caused due to the collision products. Placing silicon & diamond detectors inside the cold mass of the mag- nets, in liquid helium temperatures, would provide significant improvement to the precision of the measurement of the energy deposition in the superconducting coil of the magnet. To further study the signal formation and the shape of the transient current pulses of the aforementioned detectors in cryogenic temperatures, a simulation application has been developed. The application provides a fast way of determining the electric field components inside the detectors bulk and then introduces an initial charge distribution based on the properties of the radiat...

  15. Experimental characterization of semiconductor-based thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bedogni, R., E-mail: roberto.bedogni@lnf.infn.it [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Bortot, D.; Pola, A.; Introini, M.V.; Lorenzoli, M. [Politecnico di Milano, Dipartimento di Energia, via La Masa 34, 20156 Milano (Italy); INFN—Milano, Via Celoria 16, 20133 Milano (Italy); Gómez-Ros, J.M. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); CIEMAT, Av. Complutense 40, 28040 Madrid (Spain); Sacco, D. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); INAIL—DIT, Via di Fontana Candida 1, 00040 Monteporzio Catone (Italy); Esposito, A.; Gentile, A.; Buonomo, B. [IFNF—LNF, via E. Fermi n. 40, 00044 Frascati, Roma (Italy); Palomba, M.; Grossi, A. [ENEA Triga RC-1C.R. Casaccia, via Anguillarese 301, 00060 S. Maria di Galeria, Roma (Italy)

    2015-04-21

    In the framework of NESCOFI@BTF and NEURAPID projects, active thermal neutron detectors were manufactured by depositing appropriate thickness of {sup 6}LiF on commercially available windowless p–i–n diodes. Detectors with different radiator thickness, ranging from 5 to 62 μm, were manufactured by evaporation-based deposition technique and exposed to known values of thermal neutron fluence in two thermal neutron facilities exhibiting different irradiation geometries. The following properties of the detector response were investigated and presented in this work: thickness dependence, impact of parasitic effects (photons and epithermal neutrons), linearity, isotropy, and radiation damage following exposure to large fluence (in the order of 10{sup 12} cm{sup −2})

  16. X-ray imaging with photon counting hybrid semiconductor pixel detectors

    CERN Document Server

    Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

    1999-01-01

    Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

  17. Current problems in semiconductor detectors for high energy physics after particle irradiations

    International Nuclear Information System (INIS)

    Lazanu, Ionel

    2002-01-01

    The use of semiconductor materials as detectors in high radiation environments, as expected in future high energy accelerators or in space missions, poses severe problems in long-time operations, due to changes in the properties of the material, and consequently in the performances of detectors. This talk presents the major theoretical areas of current problems, reviews the works in this field and the stage of their understanding, including author's contributions The mechanisms of interaction of the projectile with the semiconductor, the production of primary defects, the physical quantities and the equations able to characterise and describe the radiation effects, and the equations of kinetics of defects are considered. Correlation between microscopic damage and detector performances and the possible ways to optimise the radiation hardness of materials are discussed. (author)

  18. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  19. Developing fine-pixel CdTe detectors for the next generation of high-resolution hard x-ray telescopes

    Science.gov (United States)

    Christe, Steven

    Over the past decade, the NASA Marshall Space Flight Center (MSFC) has been improving the angular resolution of hard X-ray (HXR; 20 "70 keV) optics to the point that we now routinely manufacture optics modules with an angular resolution of 20 arcsec Half Power Diameter (HDP), almost three times the performance of NuSTAR optics (Ramsey et al. 2013; Gubarev et al. 2013a; Atkins et al. 2013). New techniques are currently being developed to provide even higher angular resolution. High angular resolution HXR optics require detectors with a large number of fine pixels in order to adequately sample the telescope point spread function (PSF) over the entire field of view. Excessively over-sampling the PSF will increase readout noise and require more processing with no appreciable increase in image quality. An appropriate level of over-sampling is to have 3 pixels within the HPD. For the HERO mirrors, where the HPD is 26 arcsec over a 6-m focal length converts to 750 μm, the optimum pixel size is around 250 μm. At a 10-m focal length these detectors can support a 16 arcsec HPD. Of course, the detectors must also have high efficiency in the HXR region, good energy resolution, low background, low power requirements, and low sensitivity to radiation damage (Ramsey 2001). The ability to handle high counting rates is also desirable for efficient calibration. A collaboration between Goddard Space Flight Center (GSFC), MSFC, and Rutherford Appleton Laboratory (RAL) in the UK is developing precisely such detectors under an ongoing, funded APRA program (FY2015 to FY2017). The detectors use the RALdeveloped Application Specific Integrated Circuit (ASIC) dubbed HEXITEC, for High Energy X-Ray Imaging Technology. These HEXITEC ASICs can be bonded to 1- or 2- mm-thick Cadmium Telluride (CdTe) or Cadmium-Zinc-Telluride (CZT) to create a fine (250 μm pitch) HXR detector (Jones et al. 2009; Seller et al. 2011). The objectives of this funded effort are to develop and test a HEXITEC

  20. Influence of backscattering on the spatial resolution of semiconductor X-ray detectors

    International Nuclear Information System (INIS)

    Hoheisel, M.; Korn, A.; Giersch, J.

    2005-01-01

    Pixelated X-ray detectors using semiconductor layers or scintillators as absorbers are widely used in high-energy physics, medical diagnosis, or non-destructive testing. Their good spatial resolution performance makes them particularly suitable for applications where fine details have to be resolved. Intrinsic limitations of the spatial resolution have been studied in previous simulations. These simulations focused on interactions inside the conversion layer. Transmitted photons were treated as a loss. In this work, we also implemented the structure behind the conversion layer to investigate the impact of backscattering inside the detector setup. We performed Monte Carlo simulations with the program ROSI (Roentgen Simulation) which is based on the well-established EGS4 algorithm. Line-spread functions of different fully implemented detectors were simulated. In order to characterize the detectors' spatial resolution, the modulation transfer functions (MTF) were calculated. The additional broadening of the line-spread function by carrier transport has been ignored in this work. We investigated two different detector types: a directly absorbing pixel detector where a semiconductor slab is bump-bonded to a readout ASIC such as the Medipix-2 setup with Si or GaAs as an absorbing semiconductor layer, and flat-panel detectors with a Se or a CsI converter. We found a significant degradation of the MTF compared to the case without backscattering. At energies above the K-edge of the backscattering material the spatial resolution drops and can account for the observed low-frequency drop of the MTF. Ignoring this backscatter effect might lead to misinterpretations of the charge sharing effect in counting pixel detectors

  1. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

    Energy Technology Data Exchange (ETDEWEB)

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

    2007-05-04

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  2. Development of large area silicon semiconductor detectors for use in the current mode

    CERN Document Server

    Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

    2002-01-01

    Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

  3. X-ray measurement with Pin type semiconductor detectors

    International Nuclear Information System (INIS)

    Ramirez J, F.J.

    1999-01-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  4. Diffusion and drift of charges in semiconductor detectors

    International Nuclear Information System (INIS)

    Meidinger, N.

    1991-01-01

    For this analysis, a fully depleteable pn-CCD (a novel, energy and local resolution semiconductor using the drift chamber principle) has been tested for verification at different temperatures, photon energies, and drift times, including theoretical calculations. Experimental results are in good agreement with calculated data, and deviations (≤11%) have been understood to an extent that proposals can be made for improving the accuracy. Charge splitting has been found to be reduced in the case of reduced charge collecting areas, i.e. for example at lower temperatures, or with shorter drift times. This effect is also reduced in the case of larger charge collecting areas (pixels). With the given topology of the cell structure, the charge splitting can be much more strongly suppressed as compared to other X-ray CCD design types. (orig.) [de

  5. Monte Carlo simulations of the particle transport in semiconductor detectors of fast neutrons

    International Nuclear Information System (INIS)

    Sedlačková, Katarína; Zaťko, Bohumír; Šagátová, Andrea; Nečas, Vladimír

    2013-01-01

    Several Monte Carlo all-particle transport codes are under active development around the world. In this paper we focused on the capabilities of the MCNPX code (Monte Carlo N-Particle eXtended) to follow the particle transport in semiconductor detector of fast neutrons. Semiconductor detector based on semi-insulating GaAs was the object of our investigation. As converter material capable to produce charged particles from the (n, p) interaction, a high-density polyethylene (HDPE) was employed. As the source of fast neutrons, the 239 Pu–Be neutron source was used in the model. The simulations were performed using the MCNPX code which makes possible to track not only neutrons but also recoiled protons at all interesting energies. Hence, the MCNPX code enables seamless particle transport and no other computer program is needed to process the particle transport. The determination of the optimal thickness of the conversion layer and the minimum thickness of the active region of semiconductor detector as well as the energy spectra simulation were the principal goals of the computer modeling. Theoretical detector responses showed that the best detection efficiency can be achieved for 500 μm thick HDPE converter layer. The minimum detector active region thickness has been estimated to be about 400 μm. -- Highlights: ► Application of the MCNPX code for fast neutron detector design is demonstrated. ► Simulations of the particle transport through conversion film of HDPE are presented. ► Simulations of the particle transport through detector active region are presented. ► The optimal thickness of the HDPE conversion film has been calculated. ► Detection efficiency of 0.135% was reached for 500 μm thick HDPE conversion film

  6. A spectrometer using semi-conductor detectors; study and applications (1963)

    International Nuclear Information System (INIS)

    Roux, G.

    1963-01-01

    The low average energy, 2.5 to 3.5 eV, required to produce one hole-electron pair in a semiconductor allows an accurate measurement of the energy of the ionizing particles. A high resolution spectrometer has been built using semiconductor detectors. The limit of resolution, due to electronics associated to the detector, to the detector itself and to the source of particles is studied here. The present practical limit of resolution of the spectrometer is 1700 elementary electric charges (full width at half maximum of a ray of a spectrum) or 6 keV in terms of energy lost by a particle in a silicon detector. The physical resolution usually obtained is 20 keV (0.33 per cent) with α particles of the 212 Bi (6.087 MeV). It depends a lot of the kind of detector used. Some results, concerning the background of the detectors and limit of measurements for low energies are given. Various applications are presented: spectrometry β, spectrometry γ and X, spectrometry of mixtures of α radioactive elements, collection of α spectra. (author) [fr

  7. Measurements of Ultra-Fast single photon counting chip with energy window and 75 μm pixel pitch with Si and CdTe detectors

    International Nuclear Information System (INIS)

    Maj, P.; Grybos, P.; Kasinski, K.; Koziol, A.; Krzyzanowska, A.; Kmon, P.; Szczygiel, R.; Zoladz, M.

    2017-01-01

    Single photon counting pixel detectors become increasingly popular in various 2-D X-ray imaging techniques and scientific experiments mainly in solid state physics, material science and medicine. This paper presents architecture and measurement results of the UFXC32k chip designed in a CMOS 130 nm process. The chip consists of about 50 million transistors and has an area of 9.64 mm × 20.15 mm. The core of the IC is a matrix of 128 × 256 pixels of 75 μm pitch. Each pixel contains a CSA, a shaper with tunable gain, two discriminators with correction circuits and two 14-bit ripple counters operating in a normal mode (with energy window), a long counter mode (one 28-bit counter) and a zero-dead time mode. Gain and noise performance were verified with X-ray radiation and with the chip connected to Si (320 μm thick) and CdTe (750 μ m thick) sensors.

  8. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    International Nuclear Information System (INIS)

    Accorsi, R.; Autiero, M.; Celentano, L.

    2007-01-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256x256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125 I, 27-35 keV, 99m Tc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor

  9. Radiation damage measurements in room temperature semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

    1998-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

  10. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngjin, E-mail: radioyoungj@gmail.com [Department of Radiological Science, Eulji University, 553, Sanseong-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do (Korea, Republic of); Lee, Amy Candy [Department of Mathematics and Statistics, McGill University (Canada); Kim, Hee-Joung [Department of Radiological Science and Radiation Convergence Engineering, Yonsei University (Korea, Republic of)

    2016-09-11

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  11. Radiation damage measurements in room-temperature semiconductor radiation detectors

    CERN Document Server

    Franks, L A; Olsen, R W; Walsh, D S; Vizkelethy, G; Trombka, J I; Doyle, B L; James, R B

    1999-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI sub 2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 sup 1 sup 0 p/cm sup 2 and significant bulk leakage after 10 sup 1 sup 2 p/cm sup 2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10 sup 9 p/cm sup 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from a moderated fission spectrum of neutrons after fluences up to 10 sup 1 sup 0 n/cm sup 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particles at fluences up to 1.5x10 sup 1 sup 0 alpha/cm sup 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10 sup 9 alpha/cm sup 2. CT detectors show resolution...

  12. Nuclear Reactor Power Monitoring Using Silicon Carbide Semiconductor Radiation Detectors

    International Nuclear Information System (INIS)

    Thomas Blue; Don Miller

    2008-01-01

    To provide a perspective for our accomplishments, all of the sub-tasks in Task 1 (as they were identified in the proposal) are listed, and a brief description of the subtasks is given. Task 1--Define Generation IV Reactor Power Monitoring Requirements. Task 1.1--The power monitoring requirements for the IRIS and GT-MHR will be evaluated. Parameters considered will include maximum power level uncertainty, response time, etc. Task 1.2--The optimum locations for power monitors will be selected for both the IRIS and GT-MHR. Factors to be considered will include the power monitoring requirements defined in Task 1.1 as well as expected detector sensitivity and the presence of gamma ray background. Task 1.3--Other applications and opportunities offered by SiC power monitors will be evaluated. The prospects for on-line fault identification and diagnosis using pulse height and pulse shape analysis will be explored. The use of miniature SiC detectors to define axial, azimuthal, and radial flux profiles will be investigated

  13. Investigation about semiconductor gamma ray detector - Evaluation of Ge(Li) detectors life expectation

    International Nuclear Information System (INIS)

    1980-06-01

    A list of germanium lithium gamma ray detectors has been drawn up by a working group after investigations in various laboratories. Authors analyse the historical account of each detector and try to give an answer about some questions as: - detectors life expectation, - deficiencies and death reasons, - influence of detector type and volume. Differents parameters are also collected by the working group for future works (standard geometry, low level measurements, etc.). In the list, the characteristics of 228 detectors, collected between january 1965 and december 1977 are put together. The principal conclusions of the authors are: - with a probability of 95%, half of the detectors is dead before 6.1 years, - the average age of dead population (33% of detectors) is 3.9 years, - resolution and efficiency evolution are good indicators of possible deficiency, - the fiability of vertical cryostat is better than the other systems [fr

  14. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  15. Semiconductor devices as track detectors in high energy colliding beam experiments

    International Nuclear Information System (INIS)

    Ludlam, T.

    1980-01-01

    In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems

  16. Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

    International Nuclear Information System (INIS)

    Clark, A.G.; Donega, M.; D'Onofrio, M.

    2005-01-01

    The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued

  17. Semiconductor devices as track detectors in high energy colliding beam experiments

    Energy Technology Data Exchange (ETDEWEB)

    Ludlam, T

    1980-01-01

    In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems.

  18. Two gamma dose evaluation methods for silicon semiconductor detector

    International Nuclear Information System (INIS)

    Chen Faguo; Jin Gen; Yang Yapeng; Xu Yuan

    2011-01-01

    Silicon PIN diodes have been widely used as personal and areal dosimeters because of their small volume, simplicity and real-time operation. However, because silicon is neither a tissue-equivalent nor an air-equivalent material, an intrinsic disadvantage for silicon dosimeters is that a significant over-response occurs at low-energy region, especially below 200 keV. Using a energy compensation filter to flatten the energy response is one method overcoming this disadvantage. But for dose compensation method, the estimated dose depends only on the number of the detector pulses. So a weight function method was introduced to evaluate gamma dose, which depends on pulse number as well as its amplitude. (authors)

  19. Resistor-less charge sensitive amplifier for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

    2016-11-01

    A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

  20. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

    1998-01-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

  1. The simulation of charge sharing in semiconductor X-ray pixel detectors

    CERN Document Server

    Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

    2002-01-01

    Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  2. Digital approach to high-resolution pulse processing for semiconductor detectors

    International Nuclear Information System (INIS)

    Georgiev, A.; Buchner, A.; Gast, W.; Lieder, R.M.

    1992-01-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs

  3. Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

    International Nuclear Information System (INIS)

    Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

    1992-01-01

    Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

  4. Digital approach to high-resolution pulse processing for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Georgiev, A [Sofia Univ. (Bulgaria); Buchner, A [Forschungszentrum Rossendorf (Germany); Gast, W; Lieder, R M [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Kernphysik; Stein, J [Target System Electronic GmbH, Solingen, (Germany)

    1992-08-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs.

  5. Development of radiation tolerant semiconductor detectors for the Super-LHC

    CERN Document Server

    Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

  6. Assessment of present and future large-scale semiconductor detector systems

    International Nuclear Information System (INIS)

    Spieler, H.G.; Haller, E.E.

    1984-11-01

    The performance of large-scale semiconductor detector systems is assessed with respect to their theoretical potential and to the practical limitations imposed by processing techniques, readout electronics and radiation damage. In addition to devices which detect reaction products directly, the analysis includes photodetectors for scintillator arrays. Beyond present technology we also examine currently evolving structures and techniques which show potential for producing practical devices in the foreseeable future

  7. Noise and optimum filtering in spectrometers with semiconductor detectors operating at elevated temperature

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.

    1983-01-01

    The importance of the excess noise in the semiconductor detectors operating at the elevated temperature is discussed. Under the assumption of a conventional CR-RC type filtration the variancy of the noise output is determined. The new term ''second noise-corner time constant'' was proposed. The expression for relative signal-to-noise ratio as the dependence on the noise as well as circuits time constants was derived. It was also presented in a graphical form. 12 refs., 6 figs. (author)

  8. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

    CERN Document Server

    Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

    2005-01-01

    The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

  9. Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

    International Nuclear Information System (INIS)

    Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.

    1991-01-01

    Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors

  10. Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

    International Nuclear Information System (INIS)

    Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M.

    1992-01-01

    Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.)

  11. Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

    Energy Technology Data Exchange (ETDEWEB)

    Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. (CEA, Direction des Technologies Avancees, Lab. d' Electronique, de Technologie et d' Instrumentation, DSYS, 38 - Grenoble (France)); Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. (CEA, Direction des Applications Militaires, 77 - Courtry (France))

    1992-11-15

    Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 [mu]rad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.).

  12. Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

    Energy Technology Data Exchange (ETDEWEB)

    Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. [CEA Centre d`Etudes de Grenoble, 38 (FR). Direction des Technologies Avancees; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. [CEA Centre d`Etudes de Vaujours, 77 - Courtry (FR)

    1991-12-31

    Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 {mu}rad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors.

  13. Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

    1995-11-01

    The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

  14. Correction of incomplete charge collection in CdTe detectors using the correlation with the rise time distribution

    International Nuclear Information System (INIS)

    Horovitz, Yossi.

    1994-01-01

    Experimentally and theoretically it was found that there is a correlation between tile pulse rise time and the amount of charge that is collected in the detector contacts. As the rise time becomes longer less charge is collected. In this thesis it has been proven that one can find from this correlation, with the aid of a mathematical function, the theoretical amount of charge that has to be collected in the contacts if no trapping took place. This mathematical function called the correction function, f(t), is dependent on the rise time and the material quality (the trap concentration). In order to find the correction function, a computer, simulation was written. This computer program simulates, based on a phenomenological theoretical model, the charge collection in the detector. This model depends on three parameters (for the holes and for the electrons) that characterized the charge collection quality of the detector. The parameters are: the mean free time to be trapped, the detrapping time and the transit time that depends on the electric field. By a comparison between the simulation output and experimental data, these parameters were found. The correction function was found to be linear with rise time. This conclusion is confirmed experimentally. In this work experiments have been carried out that measured the correlation between two parameters. These experiments measured, for each photon that interacts with the detector, the pulse rise time and the pulse amplitude. A computer program accepts these spectra and substitute each element in the correction function and corrects for the incomplete charge collection. It was found that the correction function does not depend on the energy of the radiation source and source-detector geometry but depends on the material quality. The application of the correction function to the two dimensional spectra gives a correction of tens of percents in charge collection and provides an improvement in the resolution and the peak

  15. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  16. Current applications of semiconductor x-ray detectors in chemical analysis

    International Nuclear Information System (INIS)

    Whitehead, N.E.

    1975-07-01

    In the last few years, semiconductor detectors have been used as X-ray detectors with great success, and the routine rapid accumulation of X-ray spectra is now possible. This review surveys the historical development of the detectors, the utilisation, and relative merits of various means of exciting the X-radiation from the elements in the sample, and compares the technique with other methods claiming to offer the capability of simultaneous multi-element analysis. It is concluded that it is of average sensitivity, but offers some advantages from its non-destructive nature, and in some cases its ability to offer information about the spatial distribution of elements in a sample. Other types of analysis may also be possible simultaneously. Sample preparation techniques are reviewed, especially techniques of manufacturing thin samples. An appendix contains details of the very wide variety of samples which have been analysed. More than 350 references are included. (auth.)

  17. Review of CdTe medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G; Garcia, D A; Tow, D E

    1977-02-01

    CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

  18. Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

    Science.gov (United States)

    Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

    2005-01-01

    The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be LHC) operation and 10 d of cooling.

  19. Dynamic defectoscopy with flat panel and CdTe Timepix X-ray detectors combined with an optical camera

    Czech Academy of Sciences Publication Activity Database

    Vavřík, Daniel; Fauler, A.; Fiederle, M.; Jandejsek, Ivan; Jakůbek, J.; Tureček, D.; Zwerger, A.

    2013-01-01

    Roč. 8, April (2013), C04009 ISSN 1748-0221. [International Workshop on Radiation Imaging Detectors /14./. Figueira da Foz, Coimbra, 01.07.2012-05.07.2012] R&D Projects: GA ČR(CZ) GA103/09/2101 Institutional support: RVO:68378297 Keywords : X-ray digital radiography * fracture mechanics * crack path * X-ray defectoscopy Subject RIV: JM - Building Engineering Impact factor: 1.526, year: 2013 http://iopscience.iop.org/1748-0221/8/04/C04009/

  20. Evaluation of scintillators and semiconductor detectors to image three-photon positron annihilation for positron emission tomography

    International Nuclear Information System (INIS)

    Abuelhia, E.; Spyrou, N.M.; Kacperski, K.; College University, Middlesex Hospital, London

    2008-01-01

    Positron emission tomography (PET) is rapidly becoming the main nuclear imaging modality of the present century. The future of PET instrumentation relies on semiconductor detectors because of their excellent characteristics. Three-photon positron annihilation has been recently investigated as a novel imaging modality, which demands the crucial high energy resolution of semiconductor detector. In this work the evaluation of the NaI(Tl) scintillator and HPGe and CdZTe semiconductor detectors, to construct a simple three-photon positron annihilation scanner has been explored. The effect of detector and scanner size on spatial resolution (FWHM) is discussed. The characteristics: energy resolution versus count rate and point-spread function of the three-photon positron annihilation image profile from triple coincidence measurements were investigated. (author)

  1. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury

    2003-07-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  2. Simulation of drift dynamics of arbitrary carrier distributions in complex semiconductor detectors

    CERN Document Server

    De Castro Manzano, Pablo

    2014-01-01

    An extensible open-source C++ software for the simulation of elec- trons and holes drift in semiconductor detectors of complex geometries has been developed in order to understand transient currents and charge collection efficiencies of arbitrary charge distributions. The simulation is based on Ramo’s theorem formalism to obtain induced currents in the electrodes. Efficient open source C++ numerical libraries are used to ob- tain the electric and weighting field using finite-element methods and to simulate the carrier transport. A graphical user interface is also provided. The tool has already been proved useful to model laser induced transient currents

  3. Determination and stabilization of the altitude of an aircraft in space using semi-conductor detectors

    International Nuclear Information System (INIS)

    Gilly, L.

    1967-01-01

    The device studied in this report can be used as altimeter or as altitude stabilizer (B.F. number PV 100-107, March 23, 1967). It includes essentially a 'surface barrier' semiconductor detector which counts alpha particles of a radioactive source. Two sources are used corresponding to two possible utilizations of the device. This report describes experiences made in laboratory which comprises electronic tests and a physic study. Systematic analysis of experimental errors is made comparatively with aneroid altimeters. An industrial device project is given. (author) [fr

  4. Measurement of neutron flux distribution by semiconductor detector; merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [Institut za nuklearne nauke Boris Kidric, Vinca, Beograd (Yugoslavia)

    1964-07-01

    Application of semiconductor detectors for measuring neutron flux distribution is about 10 times faster than measurements by activation foils and demands significantly lower reactor power. Following corrections are avoided: mass of activation foils which influences the self shielding, nuclear decay during activity measurements; counter dead-time. It is possible to control the measured data during experiment and repeat measurements if needed. Precision of the measurement is higher since it is possible to choose the wanted statistics. The method described in this paper is applied for measurements at the RB reactor. It is concluded that the method is suitable for fast measurements but the activation analysis is still indispensable.

  5. Detection of secondary electrons with pixelated hybrid semiconductor detectors; Sekundaerelektronennachweis mit pixelierten hybriden Halbleiterdetektoren

    Energy Technology Data Exchange (ETDEWEB)

    Gebert, Ulrike Sonja

    2011-09-14

    Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10{sup -5} mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm{sup 2} area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm{sup 2}. To achieve this, a new photocathode was mounted in a shorter distance to the detector. The

  6. Study of correlation between the structural defects and inhomogeneities of CDTE based radiation detectors used for medical imaging

    International Nuclear Information System (INIS)

    Buis, Camille

    2013-01-01

    In the present Ph.D. thesis, we investigate microstructural defects in a chlorine-doped cadmium telluride crystal (CdTe:Cl), to understand the relationship between defects and performance of CdTe-based radiation detectors. Characterization tools, such as diffraction topography and chemical etching, are used for bulk and surface investigations of the distribution of dislocations. Dislocations are arranged into walls. Most of them appear to cross the whole thickness of the sample. Very good correlation is observed between areas with variations of dark-current and photo-current, and positions of the dislocation walls revealed at the surface of the sample. Then spectroscopic analysis of these defects was performed at low temperatures. It highlighted that dislocation walls induce non-radiative recombination, but it didn't show any Y luminescence usually attributed to dislocations in the literature. Ion Beam Induced Current (IBIC) measurements were used to evaluate the influence of dislocation walls on charge carrier transport properties. This experiment shows that they reduce the mobility-lifetime product of the charge carriers. A very clear correlation was, in fact, established between the distribution of the dislocation network and the linear defects revealed by their lower CIE on the device. (author) [fr

  7. Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

    International Nuclear Information System (INIS)

    Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

    1999-01-01

    We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described

  8. Systematization of efficiency correction for gamma-ray disk sources with semiconductor detectors

    International Nuclear Information System (INIS)

    Chatani, Hiroshi

    1999-01-01

    Full energy peak efficiency correction for disk sources has been systematically studied using the mapping method with two high-purity germanium detectors and two low-energy photon spectrometers. The following are found using only single-line (i.e., no coincidence summing loses) γ-rays: (1) The efficiency distributions on a plane parallel to the entrance window of semiconductor detectors is in perfect accord with Gaussian curves inside the circumference of the cylindrical Ge crystal, however, they deviate from the curves outside the circumference. (2) The width parameters of the Gaussian function fitted to the efficiency distributions have a systematic relationship with γ-ray energy. (3) The mapping method is of practical use and has satisfactory accuracy

  9. Operation of CdZnTe Semiconductor Detectors in Liquid Scintillator for the COBRA Experiment

    International Nuclear Information System (INIS)

    Oldorf, Christian

    2015-08-01

    COBRA, the Cadmium-Zinc-Telluride O-neutrino double-Beta Research Apparatus, is an experiment aiming for the measurement of the neutrinoless double beta decay with several isotopes, in particular 116 Cd, 106 Cd and 130 Te. A highly granular large scale experiment with about 400 kg of CdZnTe semiconductor detectors is currently under development. To provide evidence for the neutrinoless double beta decay of 116 Cd, a background rate in the order of 10 -3 counts/keV/kg/a is needed to achieve the required half-life sensitivity of at least 2 . 10 26 years. To reach this target, the detectors have to be operated in a highly pure environment, shielded from external radiation. Liquid scintillator is a promising candidate as a circum fluent replacement for the currently used lacquer. Next to the function as highly pure passivation material, liquid scintillator also acts as a neutron shield and active veto for external gammas. Within this thesis, the design, construction and assembly of a test set-up is described. The operation of four CdZnTe detectors after several years of storage in liquid scintillator is demonstrated. Next to extensive material compatibility tests prior to the assembly, the commissioning of the set-up and the characterization of the detectors are shown. Finally, results concerning the background reduction capability of liquid scintillator and the detection of cosmic muons are presented and compared to a Monte Carlo simulation.

  10. The system of digital-image optical microscope in semiconductor particle detector development

    International Nuclear Information System (INIS)

    Han Lixiang; Li Zhankui; Jin Genming; Wang Zhusheng; Xiao Guoqing

    2009-01-01

    Optical microscopic detection is very important in the process of semiconductor particle detector development. A system of digital-image optical microscope has been constructed with rather low price, which performance is comparable with the moderate-level imports. The system mounts powerful dry objective, and a 2μm resolution could be achieved. Observations with bright and dark field, polarized light,and interference light can be carried out on it. The system have large area on-line monitor,and the photographic device can be controlled by PC. It can be used in the control of defects and contaminations, pattern test, identification of crystal backing, inspection of the smoothness and the flatness of the crystal surface. It can also be used in some precise procedures, such as test, assembly, packaging and repairing. The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder. The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference. In the article, the application of this system for semiconductor particle detector development has been illustrated, and the construction information has been described in detail. (authors)

  11. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    International Nuclear Information System (INIS)

    Cho, T.; Numakura, T.; Kohagura, J.; Hirata, M.; Minami, R.; Watanabe, H.; Sasuga, T.; Nishizawa, Y.; Yoshida, M.; Nagashima, S.; Nakashima, Y.; Ogura, K.; Tamano, T.; Yatsu, K.; Miyoshi, S.

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availability of such semiconductors for distinguishing neutral particles (for ion temperatures) from X-rays (for electron temperatures). These are simultaneously emitted from the plasmas into semiconductor detectors; however, we employ their quite different penetration lengths and the resultant different deposition depths and profiles in semiconductor materials. As a result, their output signals are distinguishable for these two different and fundamental species of plasmas

  12. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  13. CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications

    CERN Document Server

    Triboulet, Robert

    Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.

  14. Development and characterization of the lead iodide semiconductor detector; Desenvolvimento e caracterizacao do detector semicondutor de iodeto de chumbo

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone Braga de

    2001-07-01

    A methodology for purification and growth of PbI{sub 2} crystal as well as for its characterization as a room temperature radiation detector was developed in this work. Commercial salts were purified using the zone refining method and, for the purified material growth, the Bridgman method was used. To calculate the purification efficiency, studies of the decrease impurities concentrations were made in the salts and in three sections of the materials purified, using the neutron activation analysis technique. The results showed that the impurities segregate preferentially in the ingot final section. A significant decrease of the impurities concentration in function of the purification pass number was observed. The grown crystals presented good crystalline quality according to the results of the X-ray diffraction analysis. To evaluate the crystal as a semiconductor detector, measurements of dark leakage current, resistivity and the response of ({sup 241}Am) alpha particle and ({sup 241}Am, {sup 57}Co, {sup 133}Ba and {sup 137}Cs) gamma rays were carried out. The radiation response is strongly dependent on the crystals purity. The crystals purified with 500 passes exhibited energy resolution of 10% for {sup 241} Am alpha particle and the gamma rays resolution was compatible with the literature. The photosensibility of the PbI{sub 2} crystal found in the wavelength from 400 to 600 nm range suggests an another application at this crystal as a photodetector to be coupled to scintillators. (author)

  15. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L S; Kenny, M J [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1994-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  16. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1993-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  17. A new metallic oxide semiconductor field effect transistor detector for use of in vivo dosimetry

    International Nuclear Information System (INIS)

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Kang Dehua; Anatoly Rosenfeld

    2006-01-01

    Objective: To investigate the application of a recently developed metallic oxide semiconductor field effect transistor (MOSFET) detector for use in vivo dosimetry. Methods: The MOSFET detector was calibrated for X-ray beams of 8 MV and 15 MV, as well as electron beams with energy of 6,8,12 and 18 MeV. The dose linearity of the MOSFET detector was investigated for the doses ranging from 0 up to 50 Gy using 8 MV X-ray beams. Angular effect was evaluated as well in a cylindrical PMMA phantom by changing the beam entrance angle every 15 degree clockwise. The MOSFET detector was then used for a breast cancer patient in vivo dose measurement, after the treatment plan was verified in a water phantom using a NE-2571 ion chamber, in vivo measurements were performed in the first and last treatment, and once per week during the whole treatment. The measured doses were then compared with planning dose to evaluate the accuracy of each treatment. Results: The MOSFET detector represented a good energy response for X-ray beams of 8 MV and 15 MV, and for electron beams with energy of 6 MeV up to 18 MeV. With the 6 V bias, Dose linearity error of the MOSFET detector was within 3.0% up to approximately 50 Gy, which can be significantly reduced to 1% when the detector was calibrated before and after each measurement. The MOSFET response varied within 1.5% for angles from 270 degree to 90 degree. However, maximum error of 10.0% was recorded comparing MOSFET response between forward and backward direction. In vivo measurement for a breast cancer patient using 3DCRT showed that, the average dose deviation between measurement and calculation was 2.8%, and the maximum error was less then 5.0%. Conclusions: The new MOSFET detector, with its advantages of being in size, easy use, good energy response and dose linearity, can be used for in vivo dose measurement. (authors)

  18. Development of novel semiconductor detectors for the detection of ionizing radiation

    International Nuclear Information System (INIS)

    Strueder, L.

    1989-08-01

    The present thesis treats the development of novel energy- and position-resolving semiconductor detectors: Fully depletable pn CCD's. In experiments of high-energy physics they are suited as highly resolving position-sensitive detectors for minimally ionizing particles. In nuclear and atomic physics they can be applied as position-resolving energy spectrometers. Increasing interest detectors of this type find also at synchrotron-radiation sources with photon energies from 20 eV to 50 keV. As focal instruments of X-ray telescopes they are in astrophysical measurements in an energy range from 100 eV to 15 keV of use. The required accuracy in the energy measurement amounts to 100 eV (FWHM) at an X-ray energy of 1 keV, at a simultaneous precision of the position determination of 50 μm. The measurement results which are here presented on the first fully depletable CCD's show that the components posses the potential to fulfill these requirements. (orig.) [de

  19. Development of the mercury iodide semiconductor crystal for application as a radiation detector

    International Nuclear Information System (INIS)

    Martins, Joao Francisco Trencher

    2011-01-01

    In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: physical vapor transport (PVT); saturated solution of HgI 2 , using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgI z2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique. (author)

  20. Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

    International Nuclear Information System (INIS)

    Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

    2003-01-01

    The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

  1. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  2. Development of a two-dimensional ASIC for hard X-ray spectroscopy and imaging with a CdTe pixel detector

    International Nuclear Information System (INIS)

    Hiruta, Tatsuro; Tamura, K.; Ikeda, H.; Nakazawa, K.; Takasima, T.; Takahashi, T.

    2006-01-01

    We are developing a two-dimensional analog ASIC for the readout of pixel sensors based on silicon (Si) or cadmium telluride (CdTe) for spectroscopic imaging observations in the X-ray and gamma-ray regions. The aim for the ASIC is to obtain a low-noise performance better than 100 electrons (rms) with self-triggering capabilities. As the first step of prototyping, we have fabricated several ASICs. We obtained an energy resolution of 5.4 keV (FWHM) for 81 keV gamma-rays from 133 Ba with a one-dimensional ASIC connected to a CdTe diode and also verified a readout architecture via a two-dimensional ASIC with 144 pixel channels. Based on the results obtained and experience gained through prototype ASICs, we are developing a 4096-channel two-dimensional analog ASIC

  3. Medipix2 based CdTe microprobe for dental imaging

    International Nuclear Information System (INIS)

    Vykydal, Z; Jakubek, J; Fauler, A; Fiederle, M; Zwerger, A; Svestkova, M

    2011-01-01

    Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

  4. Design of a hybrid gas proportional counter with CdTe guard counters for sup 1 sup 4 C dating system

    CERN Document Server

    Zhang, L; Hinamoto, N; Nakazawa, M; Yoshida, K

    2002-01-01

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a sup 1 sup 4 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller t...

  5. A new computational method for simulation of charge transport in semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Holban, I.

    1993-01-01

    An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

  6. PC based analysis of gamma ray spectra generated by semiconductor detectors

    International Nuclear Information System (INIS)

    Abani, M.C.; Madan, V.K.

    1993-01-01

    This report describes a spectrum analysis method and computer program for analysis of gamma spectra obtained by using semiconductor detectors and multichannel analysers. The analysis steps incorporated are smoothing, peak location using signal processing method of convolution, selectable background subtraction viz linear, polynomial and step like, peak fitting both for singlets and doublets using Mukoyama's method for evaluation of full width at half maximum and area evaluation including errors in its evaluation. The program also provides a facility for energy calibration. Typical results of analysis for singlets and doublets are included. This report is based on Wilson's report which has been modified and extended. The program is written in BASIC and its listing is included in the appendices. (author). 20 refs., 2 figs., 2 tabs

  7. Treatment verification and in vivo dosimetry for total body irradiation using thermoluminescent and semiconductor detectors

    International Nuclear Information System (INIS)

    Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

    2014-01-01

    The objective of this work is the characterization of thermoluminescent and semiconductor detectors and their applications in treatment verification and in vivo dosimetry for total body irradiation (TBI) technique. Dose measurements of TBI treatment simulation performed with thermoluminescent detectors inserted in the holes of a “Rando anthropomorphic phantom” showed agreement with the prescribed dose. For regions of the upper and lower chest where thermoluminescent detectors received higher doses it was recommended the use of compensating dose in clinic. The results of in vivo entrance dose measurements for three patients are presented. The maximum percentual deviation between the measurements and the prescribed dose was 3.6%, which is consistent with the action level recommended by the International Commission on Radiation Units and Measurements (ICRU), i.e., ±5%. The present work to test the applicability of a thermoluminescent dosimetric system and of a semiconductor dosimetric system for performing treatment verification and in vivo dose measurements in TBI techniques demonstrated the value of these methods and the applicability as a part of a quality assurance program in TBI treatments. - Highlights: • Characterization of a semiconductor dosimetric system. • Characterization of a thermoluminescent dosimetric system. • Application of the TLDs for treatment verification in total body irradiation treatments. • Application of semiconductor detectors for in vivo dosimetry in total body irradiation treatments. • Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

  8. Parallel of semi-empirical results simulated by MCNP of X-ray spectra with a semiconductor

    International Nuclear Information System (INIS)

    Santos, L.R.; Vivolo, V.; Potiens, M.P.A.; Navarro, M.V.T.; Santos, W.S.

    2016-01-01

    The aim of this study was to use the MCNPX radiation transport code to simulate X-ray spectra generated by a constant voltage system in a CdTe semiconductor detector. As part of the validation process, we obtained a series of experimental spectra. Comparatively, in all cases there is a good correlation between the two spectra. There were no statistically significant differences between the experimental results with the simulated. (author)

  9. Fast front-end electronics for semiconductor tracking detectors: Trends and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    Rivetti, Angelo

    2014-11-21

    In the past few years, extensive research efforts pursued by both the industry and the academia have lead to major improvements in the performance of Analog to Digital Converters (ADCs) and Time to Digital Converters (TDCs). ADCs achieving 8–10 bit resolution, 50–100 MHz conversion frequency and less than 1 mW power consumption are the today's standard, while TDCs have reached sub-picosecond time resolution. These results have been made possible by architectural upgrades combined with the use of ultra deep submicron CMOS technologies with minimum feature size of 130 nm or smaller. Front-end ASICs in which a prompt digitization is followed by signal conditioning in the digital domain can now be envisaged also within the tight power budget typically available in high density tracking systems. Furthermore, tracking detectors embedding high resolution timing capabilities are gaining interest. In the paper, ADC's and TDC's developments which are of particular relevance for the design front-end electronics for semiconductor trackers are discussed along with the benefits and challenges of exploiting such high performance building blocks in implementing the next generation of ASICs for high granularity particle detectors.

  10. In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment

    International Nuclear Information System (INIS)

    Viegas, Claudio Castelo Branco

    2003-03-01

    In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

  11. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Roecker, Caleb Daniel [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Schirato, Richard C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-11-17

    Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

  12. Comparison of Cadmium-Zinc-Telluride semiconductor and Yttrium-Aluminum-Perovskite scintillator as photon detectors for epithermal neutron spectroscopy

    International Nuclear Information System (INIS)

    Tardocchi, M.; Pietropaolo, A.; Andreani, C.; Gorini, G.; Imberti, S.; Perelli-Cippo, E.; Senesi, R.; Rhodes, N.; Schooneveld, E.M.

    2006-01-01

    The range of applications of epithermal neutron scattering experiments has been recently extended by the development of the Resonance Detector. In a Resonance Detector, resonant neutron absorption in an analyzer foil results in prompt emission of X- and γ-rays which are detected by a photon counter. Several combinations of analyzer foils and photon detectors have been studied and tested over the years and best results have been obtained with the combination of a natural uranium and (i) Cadmium-Zinc-Telluride (CZT) semiconductor (ii) Yttrium-Aluminum-Perovskite (YAP) scintillators. Here we compare the performance of the CZT semiconductor and YAP scintillator as Resonance Detector units. Two Resonance Detector prototypes made of natural uranium foil viewed by CZT and YAP were tested on the VESUVIO spectrometer at the ISIS spallation neutron source. The results show that both YAP and CZT can be used to detect epithermal neutrons in the energy range from 1 up to 66 eV. It was found that the signal-to-background ratio of the measurement can significantly be improved by raising the lower level discrimination threshold on the γ energy to about 600 keV. The advantages/disadvantages of the choice of a Resonance Detector based on YAP or CZT are discussed together with some potential applications

  13. Dosimetric evaluation of semiconductor detectors for application in neutron dosimetry and microdosimetry in nuclear reactor and radiosurgical facilities

    International Nuclear Information System (INIS)

    Cardenas, Jose Patricio Nahuel

    2010-01-01

    The main objective of this research is the dosimetric evaluation of semiconductor components (surface barrier detectors and PIN photodiodes) for applications in dose equivalent measurements on low dose fields (fast and thermal fluxes) using an AmBe neutron source, the IEA-R1 reactor neutrongraphy facility (epithermal and thermal fluxes) and the Critical Unit facility IPEN/MB-01 (fast fluxes). As moderator compound to fast neutrons flux from the AmBe source was used paraffin and boron and polyethylene as converter for thermal and fast neutrons measurements. The resulting fluxes were used to the irradiation of semiconductor components (SSB - Surface Barrier Detector and PIN photodiodes). A mixed converter made of a borated polyethylene foil (Kodak) was also used. Monte Carlo simulation methodology was employed to evaluate analytically the optimal paraffin thickness. The obtained results were similar to the experimental data and allowed the evaluation of emerging neutron flux from moderator, as well as the fast neutron flux reaching the polyethylene covering the semiconductor sensitive surface. Gamma radiation levels were evaluated covering the whole detector with cadmium foil 1 mm thick, allowing thermal neutrons blockage and gamma radiation measurements. The IPEN/MB-01 facility was employed to evaluate the detector response for high neutron flux. The results were in good agreement with other studies published. Using the obtained spectra an approach to dose equivalent calculation was established. (author)

  14. Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

    Energy Technology Data Exchange (ETDEWEB)

    Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

    2004-06-01

    Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

  15. A comparison between the response of compound semiconductor detectors in single and back-to-back configuration

    International Nuclear Information System (INIS)

    Auricchio, N.; Donati, A.; Dusi, W.; Perillo, E.; Siffert, P.

    2004-01-01

    CdTe detectors (3 x 5 mm 2 electrode area and 1 mm thick), mounted in a back-to-back configuration with common anode, have been characterized, aiming at determining the actual regions of these devices giving the best and almost constant spectroscopic performance. This configuration ensures that the maximum paths of the charge carriers correspond to the inter-electrode distances and consequently the spectroscopic performance is essentially the same as for the single coupled detectors, but allows one: - to double the useful absorbing thickness when irradiated in the classical planar parallel field geometry; - to double the pixel area when irradiated in the planar transverse field (PTF) geometry, while the absorbing thickness can be freely adjusted according to the experimental requirements. The tests were performed in PTF geometry by using well collimated photon beams (10-300 keV energy range) obtained by a 20 mm thick tungsten collimator having a 0.1 x 1 or a 0.3 x 1 mm 2 collimating channel. Experimental results concerning the spectroscopic behaviour of the coupled detectors have been compared with those obtained by single devices having the same thickness as the single components or the same total thickness as the coupled device. The results show that the back-to-back configuration does not introduce further significant noise with respect to 1 mm thick single detectors and their spectroscopic performance is similar or better than the one shown by 2 mm thick single devices for fine and wide collimator measurements, and mostly in the uncollimated case

  16. Measurement stand for diagnosis of semiconductor detectors based on IBM PC/XT computer (4-way spectrometric analysis of pulses)

    International Nuclear Information System (INIS)

    Gruszecki, M.

    1990-01-01

    The technical assumptions and partial realization of our technological stand for quality inspection of semiconductor detectors for ionizing radiation manufactured in the INP in Cracow are described. To increase the efficiency of the measurements simultaneous checking of 4 semiconductor chips or finished products is suggested. In order to justify this measurement technique a review of possible variants of the measurement apparatus is presented for the systems consisting of home made units. Comparative parameters for the component modules and for complete measuring systems are given. The construction and operation of data acquisition system based on IBM PC/XT are described. The system ensures simultaneous registration of pulses obtained from 4 detectors with maximal rate of up to 500 x 10 3 pulses/s. 42 refs., 6 figs., 3 tabs. (author)

  17. Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

    2011-09-11

    The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

  18. Calibration of Ge(Li) semiconductor detector by method using agar volume source

    International Nuclear Information System (INIS)

    Yanase, Nobuyuki; Kasai, Atsushi

    1979-12-01

    The Ge(Li) semiconductor detector was calibrated for measurements of environmental samples. The radioisotopes used for standard sources are 22 Na, 51 Cr, 56 Co, 57 Co, 133 Ba, 137 Cs, 144 Ce and 241 Am. These are mixed with hot agar aqueous solution and fixed uniformly in a cylindrical plastic case in cooling. The agar volume source is advantageous in handling over the fluid aqueous source. The prepared cylindrical standard sources are in diameters 6 and 8 cm and thicknesses 1, 5, 10, 20, 30 and 40 mm (only for 8 cm diameter). The radioactivities of prepared standard sources are between 0.03 μCi and 0.2 μCi. It takes only a week to make the calibration except data processing. The obtained full energy peak efficiency curves include 5 - 10% error due to preparation of agar source, reference radioactivity data of purchased standard solutions, reference data of branching ratio of gamma-ray and sum effect. The efficiency curves, however, are sufficient for quantitative analysis of environmental samples. (author)

  19. Measurement of Gamma Spectrum at domestic Nuclear Power Plant with CZT Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Kon, Kang Seo; Yoon, Kang Hwa; Lee, Byoung Il; Kim, Jeong In [KHNP, Radiation Health Research Institute, Seoul (Korea, Republic of)

    2013-10-15

    In this study we monitored gamma spectrum for young S/G to see difference of the detected nuclides between old and young S/G. The detected source terms were the same for all measurement points. There is not comparison of quantity among the nuclides. The program which analyzes gamma spectrum to calculate activity and dose rate is under developing. We expect it will be done by end of this year. In this study we could see the difference of detected nuclides between old and new S/G for the first time whereas last measurement has significant meaning in that the measurement was taken for the first time all over country. Monitoring sources terms at Nuclear Power Plant(NPP) is important to aggressive ALARA activities and evaluation of exposure of workers. EDF (Electricite de France) and AEP (American Electric Power) conduct monitoring source terms using by CZT semiconductor detector. CZT is different from HPGe in that it does not need any cooling system at room temperature, it has good energy resolution and it can be made portable type easily. For these reason CZT is used in various fields commercially to measure gamma ray and therefore KHNP(Korea Hydro and Nuclear Power Co., LTD) RHRI(Radiation Health Research Institute) has been measuring gamma spectrum at domestic NPP last spring. We had have presented the first result through the last Transactions of the Korean Nuclear Society Spring Meeting for old S/G(Steam Generator)

  20. Improvements in Applied Gamma-Ray Spectrometry with Germanium Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Brune, D; Hellstroem, S [AB Atomenergi, Nykoeping (Sweden); Dubois, J [Chalmers University of Technology, Goeteborg (Sweden)

    1965-01-15

    A germanium semi-conductor detector has in the present investigation been used in four cases of applied gamma-ray spectrometry. In one case the weak-activity contribution of Cs{sup 134} in Cs{sup 137} standard sources has been determined. The second case concerns the determination of K{sup 42} in samples of biological origin containing strong Na{sup 24} activities. In the third case the Nb{sup 94} and Nb{sup 95} activities from neutron-irradiated niobium foils used in the dosimetry of high neutron fluxes with long exposure times have been completely resolved and it has been possible to determine the ratio of the two activities with a high degree of accuracy. Finally, a Zr{sup 95} - Nb{sup 95} source has been analysed in a similar way with respect to its radiochemical composition. The resolution obtained also made possible a determination of the branching ratio of the two gamma-transitions in Zr{sup 95} and of the energies of the gamma-transitions of both nuclides.

  1. A novel integrated circuit for semiconductor radiation detectors with sparse readout

    International Nuclear Information System (INIS)

    Zhang Yacong; Chen Zhognjian; Lu Wengao; Zhao Baoying; Ji Lijiu

    2008-01-01

    A novel fully integrated CMOS readout circuit for semiconductor radiation detector with sparse readout is presented. The new sparse scheme is: when one channel is being read out, the trigger signal from other channels is delayed and then processed. Therefore, the dead time is reduced and so is the error rate. Besides sparse readout, sequential readout is also allowed, which means the analog voltages and addresses of all the channels are read out sequentially once there is a channel triggered. The circuit comprises Charge Sensitive Amplifier (CSA), pulse shaper, peak detect and hold circuit, and digital logic. A test chip of four channels designed in a 0.5 μ DPTM CMOS technology has been taped out. The results of post simulation indicate that the gain is 79.3 mV/fC with a linearity of 99.92%. The power dissipation is 4 mW per channel. Theory analysis and calculation shows that the error probability is approximately 2.5%, which means a reduction of about 37% is obtained compared with the traditional scanning scheme, assuming a 16-channel system with a particle rate of 100 k/s per channel. (authors)

  2. Infrared detectors and emitters on the basis of semiconductor quantum structures

    International Nuclear Information System (INIS)

    Kruck, P. R.

    1997-08-01

    Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)

  3. Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

    Science.gov (United States)

    Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

    1997-01-01

    For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

  4. TCT characterization of different semiconductor materials for particle detection

    International Nuclear Information System (INIS)

    Fink, J.; Lodomez, P.; Krueger, H.; Pernegger, H.; Weilhammer, P.; Wermes, N.

    2006-01-01

    The development of digital semiconductor based X-ray detectors necessitates a detailed understanding of the applied sensor material. Under this premise a broad-band transient current technique (TCT) setup has been developed and used to characterize different semiconductors. The measurements are based on the generation of electrical charges within the sensor material and the subsequent time-resolved analysis of the charge carrier movement. From the recorded current pulses the charge collection efficiency, the charge carrier mobility and the electric field profile have been extracted. The examined materials are silicon p in n diodes, ohmic and Schottky contacted CdTe detectors, CdZnTe (CZT) crystals with Schottky contacts as well as two single-crystal CVD-diamonds

  5. The importance of the time scale in radiation detection exemplified by comparing conventional and avalache semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tove, P A; Cho, Z H; Huth, G C [California Univ., Los Angeles (USA). Lab. of Nuclear Medicine and Radiation Biology

    1976-02-01

    The profound importance of the time scale of a radiation detection process is discussed in an analysis of limitations in energy resolution and timing, with emphasis on semiconductor detectors used for X-ray detection. The basic event detection time involves stopping of the particle and creating a distribution of free electrons and holes containing all desired information (energy, time position) about the particle or quantum, in a time approximately equal to 10/sup -12/s. The process of extracting this information usually involves a much longer time because the signal is generated in the relatively slow process of charge collection, and further prolongation may be caused by signal processing required to depress noise for improving energy resolution. This is a common situation for conventional semiconductor detectors with external amplifiers where time constants of 10/sup -5/-10/sup -4/s may be optimum, primarily because of amplifier noise. A different situation applies to the avalanche detector where internal amplification helps in suppressing noise without expanding the time scale of detections, resulting in an optimum time of 10/sup -9/-10/sup -8/s. These two cases are illustrated by plotting energy resolution vs. time constant, for different magnitudes of the parallel and series type noise sources. The effects of the inherent energy spread due to statistips and spatial inhomogeneities are also discussed to illustrate the potential of these two approaches for energy and time determination. Two constructional approaches for avalanche detectors are briefly compared.

  6. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Ruddy, Frank H.; Seidel, John G.

    2007-01-01

    Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 deg. C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137 Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress

  7. Design and operation of a 2-D thin-film semiconductor neutron detector array for use as a beamport monitor

    International Nuclear Information System (INIS)

    Unruh, Troy C.; Bellinger, Steven L.; Huddleston, David E.; McNeil, Walter J.; Patterson, Eric; Sobering, Tim J.; McGregor, Douglas S.

    2009-01-01

    Silicon-based diodes coated with a thin film of neutron reactive materials have been shown to produce excellent low-efficiency neutron detectors. This work employs the same technology, but groups 25 equally sized and spaced diodes on a single 29 mm by 29 mm substrate. A 5x5 array was fabricated and coated with a thin film of 6 LiF for use as a low-efficiency neutron beam monitor. The 5x5 neutron detector array is coupled to an array of amplifiers, allowing the response to be interpreted using a LabVIEW FPGA. The 5x5 array has been characterized in a diffracted neutron beam. This work is a part of on-going research to develop various designs of high- and low-efficiency semiconductor neutron detectors.

  8. Radiation detectors: needs and prospects

    International Nuclear Information System (INIS)

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and γ-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI 2 , have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties

  9. Verification of the plan dosimetry for high dose rate brachytherapy using metal-oxide-semiconductor field effect transistor detectors

    International Nuclear Information System (INIS)

    Qi Zhenyu; Deng Xiaowu; Huang Shaomin; Lu Jie; Lerch, Michael; Cutajar, Dean; Rosenfeld, Anatoly

    2007-01-01

    The feasibility of a recently designed metal-oxide-semiconductor field effect transistor (MOSFET) dosimetry system for dose verification of high dose rate (HDR) brachytherapy treatment planning was investigated. MOSFET detectors were calibrated with a 0.6 cm 3 NE-2571 Farmer-type ionization chamber in water. Key characteristics of the MOSFET detectors, such as the energy dependence, that will affect phantom measurements with HDR 192 Ir sources were measured. The MOSFET detector was then applied to verify the dosimetric accuracy of HDR brachytherapy treatments in a custom-made water phantom. Three MOSFET detectors were calibrated independently, with the calibration factors ranging from 0.187 to 0.215 cGy/mV. A distance dependent energy response was observed, significant within 2 cm from the source. The new MOSFET detector has a good reproducibility ( 2 =1). It was observed that the MOSFET detectors had a linear response to dose until the threshold voltage reached approximately 24 V for 192 Ir source measurements. Further comparison of phantom measurements using MOSFET detectors with dose calculations by a commercial treatment planning system for computed tomography-based brachytherapy treatment plans showed that the mean relative deviation was 2.2±0.2% for dose points 1 cm away from the source and 2.0±0.1% for dose points located 2 cm away. The percentage deviations between the measured doses and the planned doses were below 5% for all the measurements. The MOSFET detector, with its advantages of small physical size and ease of use, is a reliable tool for quality assurance of HDR brachytherapy. The phantom verification method described here is universal and can be applied to other HDR brachytherapy treatments

  10. Parallel of semi-empirical results simulated by MCNP of X-ray spectra with a semiconductor; Paralelo de resultado semi- empiricos simulados por MCNPX de espectros de raios-X com um semicondutor

    Energy Technology Data Exchange (ETDEWEB)

    Santos, L.R.; Vivolo, V.; Potiens, M.P.A., E-mail: dossantos.lucasrodrigues@gmail.com [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Navarro, M.V.T.; Santos, W.S. [Universidade Federal de Uberlandia (INFIS/UFU), MG (Brazil). Instituto de Fisica

    2016-07-01

    The aim of this study was to use the MCNPX radiation transport code to simulate X-ray spectra generated by a constant voltage system in a CdTe semiconductor detector. As part of the validation process, we obtained a series of experimental spectra. Comparatively, in all cases there is a good correlation between the two spectra. There were no statistically significant differences between the experimental results with the simulated. (author)

  11. A hybrid, broadband, low noise charge preamplifier for simultaneous high resolution energy and time information with large capacitance semiconductor detector

    International Nuclear Information System (INIS)

    Goyot, M.

    1975-05-01

    A broadband and low noise charge preamplifier was developed in hybrid form, for a recoil spectrometer requiring large capacitance semiconductor detectors. This new hybrid and low cost preamplifier permits good timing information without compromising energy resolution. With a 500 pF external input capacity, it provides two simultaneous outputs: (i) the faster, current sensitive, with a rise time of 9 nsec and 2 mV/MeV on 50 ohms load, (ii) the lower, charge sensitive, with an energy resolution of 14 keV (FWHM Si) using a RC-CR ungated filter of 2 μsec and a FET input protection [fr

  12. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

    2010-01-01

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  13. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

    2010-02-15

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  14. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Entine, G.

    1985-01-01

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  15. Combined performance tests before installation of the ATLAS Semiconductor and Transition Radiation Tracking Detectors

    Czech Academy of Sciences Publication Activity Database

    Abat, E.; Abdesselam, A.; Andy, T.N.; Böhm, Jan; Šťastný, Jan

    2008-01-01

    Roč. 3, - (2008), P08003/1-P08003/67 ISSN 1748-0221 R&D Projects: GA MŠk LA08032; GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : solid state detectors * particle tracking detectors * large detector systems for particle and astroparticle physics * transition radiation detectors Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 0.333, year: 2008

  16. Matrix-Assisted Laser Desorption Ionization Mass Spectrometry of Compounds Containing Carboxyl Groups Using CdTe and CuO Nanoparticles

    OpenAIRE

    Megumi Sakurai; Taro Sato; Jiawei Xu; Soichi Sato; Tatsuya Fujino

    2018-01-01

    Matrix-assisted laser desorption ionization mass spectrometry of compounds containing carboxyl groups was carried out by using semiconductor nanoparticles (CdTe and CuO) as the matrix. Salicylic acid (Sal), glucuronic acid (Glu), ibuprofen (Ibu), and tyrosine (Tyr) were ionized as deprotonated species (carboxylate anions) by using electrons ejected from CdTe after the photoexcitation. When CuO was used as the matrix, the peak intensity of Tyr became high compared with that obtained with CdTe....

  17. Radiation detectors

    International Nuclear Information System (INIS)

    2013-01-01

    This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

  18. Design and Performance of Soft Gamma-ray Detector for NeXT Mission

    Science.gov (United States)

    Tajima, H.; Kamae, T.; Madejski, G.; Takahashi, T.; Nakazawa, K.; Watanabe, S.; Mitani, T.; Tanaka, T.; Fukazawa, Y.; Kataoka, J.; Ikagawa, T.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.

    The Soft Gamma-ray Detector (SGD) on board NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and Cadmium Telluride (CdTe) detectors. It can detect photons in an energy band 0.05-1 MeV at a background level of 5×10-7 counts/s/cm2/keV; the silicon layers are required to improve the performance at a lower energy band (development of key technologies to realize the SGD; high quality CdTe, low noise front-end VLSI and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for silicon strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

  19. Analysis and modelling of the performance of a new solid-state detector in nuclear medicine: from Anger- to Semiconductor-detectors

    International Nuclear Information System (INIS)

    Imbert, L.

    2012-01-01

    Myocardial single-photon emission computed tomography (SPECT) is considered as the gold standard for the diagnosis of coronary artery disease. Developed in the 1980's with rotating Anger gamma cameras, this technique could be dramatically enhanced by new imaging systems working with semiconductor detectors and which performances are clearly enhanced. Two semiconductor cameras, dedicated to nuclear cardiology and equipped with Cadmium Zinc Telluride detectors, have been recently commercialized: the Discovery NM- 530c (General Electric) and the DSPECT (Spectrum Dynamics). The performances of these CZT cameras were compared: 1) by a comprehensive analysis of phantom and human SPECT images considered as normal and 2) with the parameters commonly recommended for SPECT recording and reconstruction. The results show the superiority of the CZT cameras in terms of detection sensitivity, spatial resolution and contrast-to-noise ratio, compared to conventional Anger cameras. These properties might lead to dramatically reduce acquisition times and/or the injected activities. However, the limits of these new CZT cameras, as well as the mechanism of certain artefacts, remain poorly known. This knowledge could be enhanced by a numerical modeling of the DSPECT camera, and this might also help to optimize acquisition and reconstruction parameters. We developed a simulator where the geometry of the detectors of the DSPECT camera and their energy response were modeled in the GATE platform. In order to validate this simulator, actually recorded data were compared with simulated data through three performance parameters: detection sensitivity, spatial resolution and energy resolution. Results were in agreement between simulated and actually recorded data. This observation validates the DSPECT simulator and opens the door to further studies planed to optimize the recorded and reconstruction processes, especially for complex protocols such as simultaneous dual-radionuclide acquisition

  20. Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

    International Nuclear Information System (INIS)

    Kienlin, A. von.

    1994-01-01

    In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

  1. Current simulation of symmetric contacts on CdTe

    International Nuclear Information System (INIS)

    Ruzin, A.

    2011-01-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  2. Current simulation of symmetric contacts on CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2011-12-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  3. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  4. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    International Nuclear Information System (INIS)

    Adamian, A.Z.; Adamian, Z.N.; Aroutiounian, V.M.

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi 2 O 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold

  5. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  6. Performance of thallium bromide semiconductor detectors produced by repeated Bridgman method

    International Nuclear Information System (INIS)

    Santos, Robinson Alves dos; Costa, Fabio Eduardo da; Martins, Joao Francisco Trencher; Hamada, Margarida M.

    2009-01-01

    TlBr crystals have been grown by the Repeated Bridgman method from commercial TlBr materials and characterized to be used as radiation detectors. We have shown that the Repeated Bridgman is effective to reduce the concentration of impurities in TlBr. It was observed that detectors fabricated from higher purity crystal exhibit significant improvement in performance compared to those produced from low purity crystals. However, problems still exist in TlBr detectors, due to the low charge carrier collection efficiency, which is probably caused by additional impurities or defects incorporated during crystal growth and detector fabrication processes. (author)

  7. Process allowing the spectral compensation of semi-conductor nuclear detector

    International Nuclear Information System (INIS)

    L'Hote, J.P.

    1987-01-01

    The process includes a discriminator whose threshold level is applied to the detector during a fixed time and is externally controlled by a pre-programmed system; the different threshold levels and their application time to the detector are fixed by the nature of the used detector and by the tolerance allowed on the spectral response. The measurements made for each threshold level are corrected by a coefficient depending on the nature of the used detector and the tolerance on the spectral response [fr

  8. Characterization of imaging pixel detectors of Si and CdTe read out with the counting X-ray chip MPEC 2.3

    International Nuclear Information System (INIS)

    Loecker, M.

    2007-04-01

    Single photon counting detectors with Si- and CdTe-sensors have been constructed and characterized. As readout chip the MPEC 2.3 is used which consists of 32 x 32 pixels with 200 x 200 μm 2 pixel size and which has a high count rate cabability (1 MHz per pixel) as well as a low noise performance (55 e - ). Measurements and simulations of the detector homogeneity are presented. It could be shown that the theoretical maximum of the homogeneity is reached (quantum limit). By means of the double threshold of the MPEC chip the image contrast can be enhanced which is demonstrated by measurement and simulation. Also, multi-chip-modules consisting of 4 MPEC chips and a single Si- or CdTe-sensor have been constructed and successfully operated. With these modules modulation-transfer-function measurements have been done showing a good spatial resolution of the detectors. In addition, multi-chip-modules according to the Sparse-CMOS concept have been built and tests characterizing the interconnection technologies have been performed

  9. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  10. Operational Experience of the ATLAS SemiConductor Tracker and Pixel Detector

    CERN Document Server

    Robinson, Dave; The ATLAS collaboration

    2016-01-01

    The tracking performance of the ATLAS detector relies critically on the silicon and gaseous tracking subsystems that form the ATLAS Inner Detector. Those subsystems have undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the LHC during Run2. The key status and performance metrics of the Pixel Detector and the Semi Conductor Tracker are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described.

  11. K-mean clustering algorithm for processing signals from compound semiconductor detectors

    International Nuclear Information System (INIS)

    Tada, Tsutomu; Hitomi, Keitaro; Wu, Yan; Kim, Seong-Yun; Yamazaki, Hiromichi; Ishii, Keizo

    2011-01-01

    The K-mean clustering algorithm was employed for processing signal waveforms from TlBr detectors. The signal waveforms were classified based on its shape reflecting the charge collection process in the detector. The classified signal waveforms were processed individually to suppress the pulse height variation of signals due to the charge collection loss. The obtained energy resolution of a 137 Cs spectrum measured with a 0.5 mm thick TlBr detector was 1.3% FWHM by employing 500 clusters.

  12. Development of bonded semiconductor device for high counting rate high efficiency photon detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo

    2008-01-01

    We are trying to decrease dose exposure in medical diagnosis by way of measuring the energy of X-rays. For this purpose, radiation detectors for X-ray energy measurement with high counting rate should be developed. Direct bonding of Si wafers was carried out to make a radiation detector, which had separated X-ray absorber and detector. The resistivity of bonding interface was estimated with the results of four-probe measurements and model calculations. Direct bonding of high resistivity p and n-Si wafers was also performed. The resistance of the pn bonded diode was 0.7 MΩ. The resistance should be increased in the future. (author)

  13. Structure of CdTe nanoparticles in glass

    Science.gov (United States)

    Hayes, T. M.; Nagpal, Swati; Persans, P. D.

    2000-03-01

    Optical long-pass wavelength filters are generally made by growing small crystallites of appropriate semiconductors in a transparent glass matrix. Depending on the semiconductor, these systems are candidates for interesting and important nonlinear optical switching applications. The structure of these nanocrystals has been shown to be a valuable indicator of the chemical and thermodynamic processes during crystallite growth and dissolution. We have used x-ray absorption spectroscopy to study the structure of the crystallites produced during heat treatment of filter glasses containing Cd and Te and producing optical absorption edges at the band gap of bulk CdTe. The results will be discussed.

  14. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    Science.gov (United States)

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  15. Averaged currents induced by alpha particles in an InSb compound semiconductor detector

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Hishiki, Shigeomi; Kogetsu, Yoshitaka; Nakamura, Tatsuya; Katagiri, Masaki

    2008-01-01

    Very fast pulses due to alpha particle incidence were observed by an undoped-type InSb Schottky detector. This InSb detector was operated without applying bias voltage and its depletion layer thickness was less than the range of alpha particles. The averaged current induced by alpha particles was analyzed as a function of operating temperature and was shown to be proportional to the Hall mobility of InSb. (author)

  16. Development of semiconductor ΔE-E detector chip using standard bipolar IC technology

    International Nuclear Information System (INIS)

    Mishra, Vijay; Kataria, S.K.

    2005-01-01

    A proposal has been made for developing silicon based AE-E detector chip which can be used as particle identifiers in nuclear physics experiments and also in several applications in nuclear industry scenario. The proposed development work employs standard bipolar IC fabrication technology of Bharat Electronics Ltd. and the deliverable products that emerge out will be very cost effective. The present paper discusses the concept, feasibility studies and systematic plan for fabrication, characterization and packaging of the proposed detectors. (author)

  17. Development of TiBr semiconductor crystal for applications as radiation detector and photodetector

    International Nuclear Information System (INIS)

    Oliveira, Icimone Braga de

    2006-01-01

    In this work, Tlbr crystals were grown by the Bridgman method from zone melted materials. The influence of the purification efficiency and the crystalline surface quality on the crystal were studied, evaluating its performance as a radiation detector. Due to significant improvement in the purification and crystals growth, good results have been obtained for the developed detectors. The spectrometric performance of the Tlbr detector was evaluated by 241 Am (59 keV), 133 Ba (80 e 355 keV), 57 Co (122 keV), 22 Na (511 keV) and 137 Cs (662 keV) at room temperature. The best energy resolution results were obtained from purer detectors. Energy resolutions of 10 keV (16%), 12 keV (15%), 12 keV (10%), 28 keV (8%), 31 keV (6%) and 36 keV (5%) to 59, 80, 122, 355, 511 and 662 keV energies, respectively, were obtained. A study on the detection response at -20 deg C was also carried out, as well as the detector stability in function of the time. No significant difference was observed in the energy resolution between measurements at both temperatures. It was observed that the detector instability causes degradation of the spectroscopic characteristics during measurements at room temperature and the instability varies for each detector. This behavior was also verified by other authors. The viability to use the developed Tlbr crystal as a photodetector coupled to scintillators crystals was also studied in this work. Due to its quantum efficiency in the region from 350 to 500 nm, Tlbr shows to be a promising material to be used as a photodetector. As a possible application of this work, the development of a surgical probe has been initiated using the developed Tlbr crystal as the radiation detector of the probe. (author)

  18. Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-08-09

    This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm2 of active detector area.

  19. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  20. Silicon radiation detectors

    International Nuclear Information System (INIS)

    Lutz, G.

    1995-01-01

    An introduction to and an overview of function principles and properties of semiconductor radiation detectors is attempted. The paper is addressed to people interested in detector development but not already experts in the field of semiconductor detectors. (orig.)

  1. High-z semiconductor nuclear radiation detectors for room-temperature gamma-ray spectrometry

    International Nuclear Information System (INIS)

    Bornand, Bernard; Friant, Alain.

    1978-09-01

    A bibliographical review (182 articles of periodicals, conferences, reports, thesis and french patents) is presented, as addendum of the report CEA-BIB-210 (1974) on high-Z semiconductor compounds used as materials for the gamma and X-ray detection and spectrometry. This publication reviews issues from 1974 to 1977. References and summaries (in french) are incorporated into 182 bibliograhical notices. Index for authors, corporate authors, documents and periodicals, and subjects is included [fr

  2. Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Walter, F J; Dabbs, J W.T.; Roberts, L D [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    1962-04-15

    Experimental and theoretical studies of the behaviour of semiconductor nuclear-particle detectors have been carried out over the temperature range of 0.2{sup o}K to 300{sup o}K. A simple theoretical model for the detector behaviour, which is found to describe the observed behaviour over a wide range of parameters, is presented. The importance of semiconductor purity and bias voltage in connection with pulse height, pulse rise-time and detector area is discussed. Empirical studies of noise and energy resolution indicate that for alpha particles the smallest observed peak-widths are substantially larger than those expected on the basis of electrical noise from the detector and amplifier. Equivalent noise values of {<=} 3 keV full-width at half maximum (FWHM) have been found for a 40-mm{sup 2} silicon surface-barrier detector at 77{sup o}K. Semiconductor detectors exhibit a ''pulse-height defect'' for fission fragments. There is evidence that this defect is not caused by a ''dead layer''. If electric fields which are insufficient to insure complete ''collection'' are responsible for the defect, the necessary minimum field (at the surface) is > 3 x 10{sup 4} V/cm for fission fragments, as compared to the value of 2 x 10{sup 3} V/cm which is found necessary in the case of alpha particles in Ge and Si. Detailed considerations regarding pulse rise-time at the amplifier have shown that in high-resistivity material both the ''dielectric'' relaxation time and the resistance associated with the undepleted base material can play an important role. A quantative description of the effect of detector and amplifier parameters on the shapes and rise-times associated with the pulse are presented. The advantages and problems associated with the use of surface-barrier detectors in several unique low-temperature nuclear-alignment experiments are discussed. These experiments involved fission-fragment angular distributions and resolution of alpha-fine structure with long-term stability

  3. Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Badano, Giacomo; Ballet, Philippe; Zanatta, Jean-Paul; Baudry, Xavier; Million, Alain; Garland, James W.

    2006-01-01

    The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe(211)B layers were grown on Ge(211) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials

  4. New SRDN-3 probes with a semi-conductor detector for measuring radon activity concentration in underground spaces

    International Nuclear Information System (INIS)

    Przylibski, T.A.; Lidia Fijalkowska-Lichwa; Elzbieta Kochowska; Krzysztof Kozak; Jadwiga Mazur

    2010-01-01

    The article presents new Polish probes SRDN-3, developed at the Institute of Nuclear Chemistry and Technology in Warsaw, equipped with a semi-conductor detector used for continuous measurements of 222 Rn activity concentration. Due to a relatively high lower detection limit, the device is dedicated for use in underground spaces-caves, adits, mines, tourist routes in strongholds, pyramids, etc. Its structure allows for difficult conditions in which the device is transported to the measurement site, as well as hard operating conditions caused chiefly by large ambient relative humidity, reaching up to 100%. The authors present calibration results of these appliances, as well as the results of their work in a cave and an adit in the Sudetes (SW Poland). After almost 2 years of working in difficult conditions, the probes displayed high reliability. No defects of the semi-conductor detectors or the electronics were observed, which ensured problem-free communication of the probe-programmer-PC set. Thanks to this, the authors have a 2 year stock of data, recorded hourly by five probes, at their disposal. The only element that did not withstand the test of extreme operating conditions was one of the combined relative humidity and temperature sensors. No powering problems were observed either, and the batteries were replaced once a year, before the winter season. Also the programmer functioned faultlessly, enabling data transmission to a PC, which, being much more sensitive to operating conditions, had been placed away from the site of probe exposure. After using more sensitive temperature, relative humidity and pressure sensors, SRDN-3 probes will certainly prove an excellent tool for microclimate measurements (including measurement of air-atmosphere exchange) in caves and other underground sites. Even nowadays they are already a satisfactory tool for monitoring 222 Rn concentration in underground spaces. (author)

  5. Solid-state cadmium telluride radiation detector

    Energy Technology Data Exchange (ETDEWEB)

    Takeuchi, Yoji; Kitamoto, Hisashi; Hosomatsu, Haruo

    1984-09-01

    The growth of CdTe single crystal and its application to CdTe detector array was studied for X-ray computed tomography (XCT) equipment. A p-type CdTe single crystal with 10/sup 4/ ohm.cm specific resistivity was grown in a quartz ampoule under vapor pressure control of Cd in a vertical Bridgman furnace. An 18-element detector array was fabricated with this single crystal. The detector was operated with no bias and the sensitivity was confirmed to be between 2.8 x 10/sup -12/ and 14 x 10/sup -12/ A.h/(R.mm/sup 2/). Commercial CdTe single crystal was used to manufacture as 560-element detector array for XCT. Results show that CdTe detector is sensitive, linear and has high resolution.

  6. A Gamma Scanner Using a Ge(Li) Semi-Conductor Detector, with the Possibility of Operation in the Anti-Coincidence Mode

    Energy Technology Data Exchange (ETDEWEB)

    Forsyth, R S; Blackadder, W H

    1970-04-15

    A fuel element transport flask has been modified as a facility for gamma scanning irradiated fuel elements up to a length of 75 cm. By means of a Ge(Li) semi-conductor detector, satisfactory activity profiles along the specimens have been obtained, permitting the location of individual fuel pellets. An annular plastic detector surrounding the Ge(Li) detector allows operation of the spectrometer in the anti-coincidence mode, and reduction of the Compton continuum by about 50% has been obtained.

  7. A Gamma Scanner Using a Ge(Li) Semi-Conductor Detector, with the Possibility of Operation in the Anti-Coincidence Mode

    International Nuclear Information System (INIS)

    Forsyth, R.S.; Blackadder, W.H.

    1970-04-01

    A fuel element transport flask has been modified as a facility for gamma scanning irradiated fuel elements up to a length of 75 cm. By means of a Ge(Li) semi-conductor detector, satisfactory activity profiles along the specimens have been obtained, permitting the location of individual fuel pellets. An annular plastic detector surrounding the Ge(Li) detector allows operation of the spectrometer in the anti-coincidence mode, and reduction of the Compton continuum by about 50% has been obtained

  8. A proposal for both plasma ion- and electron-temperature diagnostics under simultaneous incidence of particles and x-rays into a semiconductor on the basis of a proposed model for a semiconductor detector response

    International Nuclear Information System (INIS)

    Numakura, T; Cho, T; Kohagura, J; Hirata, M; Minami, R; Yoshida, M; Nakashima, Y; Tamano, T; Yatsu, K; Miyoshi, S

    2003-01-01

    A method is proposed for obtaining radial profiles of plasma temperatures of both plasma ion (T i ) and electron (T e ) simultaneously by the use of a semiconductor detector array. The method is based on our developed particle-response model for a semiconductor detector; in particular, the response theory is constructed for giving the applicability in particle energies ranging down to a kiloelectronvolt. Calculated results from our model are in fairly good agreement with experimental data on the detector response of incident particle beams with energies in the range 100 eV to a few kiloelectronvolts. On the basis of the verification of the proposed model, an idea of the use of a developed semiconductor detector array covered with 'reliably unbreakable' ultrathin SiO 2 'dead-layer filters' having various nanometre-order thicknesses is applied for simultaneous T i and T e analyses by using charge-exchange neutral particles and x-rays from plasmas. Radial profiles of T i and T e are obtained in a single plasma discharge alone, and the data reliability is independently cross-checked by a radial scan of a conventional charge-exchange neutral-particle analyser system as well as a 50-channel microchannel plate x-ray diagnostics system in the GAMMA 10 tandem mirror

  9. Neutron-activation determination of the rare earths in natural calcites using a semiconductor detector

    International Nuclear Information System (INIS)

    Vaganov, N.A.; Bulnaev, A.I.; Mejer, V.A.; Ponomarev, V.S.

    1976-01-01

    The application of germanium semiconducting detector is described. The detector has an energy resolution about 1 KeV and makes it possible to determine the content of Ce, Nd, Eu, Gd, Tb, and Yb in natural calcites with high sensitivity. The region of soft γ-radiation of activated calcites is more favourable for measurements to be performed than the region of hard γ-rays. Semiconducting detectors of radiation type are relatively cheap; they can be stored at room temperature. The limit of determining rare earth elements in calcites is (g): Eu-1.5.10 -9 ; Tb-4.0.10 -9 ; Yb-7.0.10 -9 ; Ce-1.0.10 -7 ; Nd-5.0.10 -7 ; Gd-1.0.10 -6 . A relative error of concentration determination is 10-20%

  10. Development of surgical gamma probes with TlBr semiconductors and CsI(Tl) scintillators crystals

    International Nuclear Information System (INIS)

    Costa, Fabio Eduardo da

    2006-01-01

    Radio guided surgery, using probes with radiation detectors, has been prominence in the medical area in the last decade. This technique consists in injecting a radioactive substance to concentrate in tumour and assist the localization during the surgical procedure. The radio guided surgeries allowing the identification of lymph node has revolutioned the behavior of tumour in initial stadium when are being spread by lymphatic way. The conditions imposed to the surgery due the proximity between some lymph nodes, demands of the probes, a small diameters and capacity of individual identification of these lymph nodes radiolabelled by a specific tracer. The international market supplies these probes with CdTe semiconductors and scintillators, but there is some time lack a promptly technical assistance in the Brazilian market. This work developed probes with national technology, using CsI(Tl) scintillators crystals and, in substitution to CdTe crystals semiconductors, the TlBr crystal, that is a new semiconductor detector in a world-wide development, with advantages in relation to the CdTe. Both crystals have been grown in IPEN. All the necessary electronics, specially, the preamplifier, that was also a restrictive factor for development of these types of probe in the country, have been developed with components found in the national market. Systematic measures of spatial resolution, spatial selectivity, maximum sensitivity and quality of the shielding have been carried the probes development. The results have shown that the probes, one with the CsI(Tl) crystal and another with TlBr semiconductor presented the requested performance in the international literature for radio guided probes. (author)

  11. Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

    CERN Document Server

    Jakšic, Zoran

    2014-01-01

    The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

  12. Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

    2014-01-01

    Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

  13. Monte Carlo simulation of semiconductor detector response to "2"2"2Rn and "2"2"0Rn environments

    International Nuclear Information System (INIS)

    Irlinger, J.; Trinkl, S.; Wielunksi, M.; Tschiersch, J.; Rühm, W.

    2016-01-01

    A new electronic radon/thoron monitor employing semiconductor detectors based on a passive diffusion chamber design has been recently developed at the Helmholtz Zentrum München (HMGU). This device allows for acquisition of alpha particle energy spectra, in order to distinguish alpha particles originating from radon and radon progeny decays, as well as those originating from thoron and its progeny decays. A Monte-Carlo application is described which uses the Geant4 toolkit to simulate these alpha particle spectra. Reasonable agreement between measured and simulated spectra were obtained for both "2"2"0Rn and "2"2"2Rn, in the energy range between 1 and 10 MeV. Measured calibration factors could be reproduced by the simulation, given the uncertainties involved in the measurement and simulation. The simulated alpha particle spectra can now be used to interpret spectra measured in mixed radon/thoron atmospheres. The results agreed well with measurements performed in both radon and thoron gas environments. It is concluded that the developed simulation allows for an accurate prediction of calibration factors and alpha particle energy spectra. - Highlights: • A method was developed to simulate alpha particle spectra from radon/thoron decay. • New monitor features alpha-particle-spectroscopy based on silicon detectors. • A method is presented to quantify radon/thoron concentrations in mixed atmospheres. • The calibration factor can be simulated for various environmental parameters.

  14. Radon concentration and exhalation measurements with semiconductor detector and electrostatic precipitator working in a closed circulation system

    International Nuclear Information System (INIS)

    Wojcik, M.; Morawska, L.

    1982-01-01

    An apparatus is described and a method presented for the determination of concentration of radon emanated from solid and liquid samples. In this method an object or a sample of air is closed in an hermetically sealed chamber. The air contaminated by radon and its daughters is circulated in a closed system a few times through an electrostatic precipitator mounted in one housing with a semiconductor Si Li detector. The concentration of radon is determined by the alpha activity measurement of its daughters. The sensitivity of the apparatus is very high. While calculating a radon concentration from an activity measurement of RaA (fast method) the sensitivity is about 0.07 pCi/l and when measuring the activity of RaC' (slow method) it is 0.008 pCi/l. Due to the application of an electrostatic precipitator and a silicon detector it is possible to perform alpha spectrometric measurements and thus separate activities of RaA, RaC', and ThC and to calculate 222 Rn or 220 Rn concentrations. The efficiency of RaA, RaB, RaC, ThB and ThC collection is constant, due to the method involving the circulation of the air through the electrostatic precipitator several times. (author)

  15. Remote impact of rotating objects on semiconductor detector of gamma radiation

    International Nuclear Information System (INIS)

    Mel'nik, I.A.

    2005-01-01

    Remote impact of rotating objects (such as electric motors, flywheels) on meter and ionizing radiation detector readings were studied. A model, explaining diminution of readings of scintillation and gas-discharge intensimeters at switched on hygroscopic electric motor and at mechanically rotating flywheel, is proposed

  16. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    Energy Technology Data Exchange (ETDEWEB)

    Trivedi, Sudhir B [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Kutcher, Susan W [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Palsoz, Witold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States); Berding, Martha [SRI International, Menlo Park, CA (United States); Burger, Arnold [Brimrose Technology Corporation, Sparks Glencoe, MD (United States)

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  17. Determination of radon concentration in spring gases with a portable semiconductor detector

    International Nuclear Information System (INIS)

    Endo, K.; Yanaga, M.; Yoshikawa, H.; Horiuchi, K.; Nakahara, H.; Murakami, Y.

    1985-01-01

    A portable integrating radon meter, alpha METER-400, was tested. The instrument detects α-rays of energy greater than 2.59 MeV. With this detector, the concentration of 222 Rn in spring gases at volcanic regions was determined. The results were compared with those observed by the liquid scintillation counting method. (author)

  18. SU-E-T-231: Measurements of Gold Nanoparticle-Mediated Proton Dose Enhancement Due to Particle-Induced X-Ray Emission and Activation Products Using Radiochromic Films and CdTe Detector

    International Nuclear Information System (INIS)

    Cho, J; Cho, S; Manohar, N; Krishnan, S

    2014-01-01

    Purpose: There have been several reports of enhanced cell-killing and tumor regression when tumor cells and mouse tumors were loaded with gold nanoparticles (GNPs) prior to proton irradiation. While particle-induced xray emission (PIXE), Auger electrons, secondary electrons, free radicals, and biological effects have been suggested as potential mechanisms responsible for the observed GNP-mediated dose enhancement/radiosensitization, there is a lack of quantitative analysis regarding the contribution from each mechanism. Here, we report our experimental effort to quantify some of these effects. Methods: 5-cm-long cylindrical plastic vials were filled with 1.8 mL of either water or water mixed with cylindrical GNPs at the same gold concentration (0.3 mg Au/g) as used in previous animal studies. A piece of EBT2 radiochromic film (30-µm active-layer sandwiched between 80/175-µm outer-layers) was inserted along the long axis of each vial and used to measure dose enhancement due to PIXE from GNPs. Vials were placed at center-of-modulation (COM) and 3-cm up-/down-stream from COM and irradiated with 5 different doses (2–10 Gy) using 10-cm-SOBP 160-MeV protons. After irradiation, films were cleaned and read to determine the delivered dose. A vial containing spherical GNPs (20 mg Au/g) was also irradiated, and gamma-rays from activation products were measured using a cadmium-telluride (CdTe) detector. Results: Film measurements showed no significant dose enhancement beyond the experimental uncertainty (∼2%). There was a detectable activation product from GNPs, but it appeared to contribute to dose enhancement minimally (<0.01%). Conclusion: Considering the composition of EBT2 film, it can be inferred that gold characteristic x-rays from PIXE and their secondary electrons make insignificant contribution to dose enhancement. The current investigation also suggests negligible dose enhancement due to activation products. Thus, previously-reported GNP-mediated proton dose

  19. Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

    Energy Technology Data Exchange (ETDEWEB)

    Onodera, T. E-mail: tosiyuki@smail.tohtech.ac.jp; Hitomi, K.; Shoji, T.; Hiratate, Y

    2004-06-01

    Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI{sub 2}. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm{sup 3}). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI{sub 2}. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3x3 pixellated anodes (0.57x0.57 mm{sup 2} each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with {sup 241}Am (59.5 keV), {sup 57}Co (122 keV) and {sup 137}Cs (662 keV) gamma-ray sources at temperature of -20 deg. C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

  20. International Conference on Narrow Gap Semiconductors Held in Southampton, England on 19-23 July 1992. Abstracts Booklet

    Science.gov (United States)

    1992-07-01

    University, Liniz. Narrow gap semiconductors offer the possibility to investigate in detail the role of conduction electrons in spin relaxation processes. In...crucial role on device performance. Hg1 ,-Zn.Te (N2T) is considered an alternative material to Hg1 -. Cd.Te (NCT) for infrared detectors. To the best of our... iaSb -AlSb-InAs-AlSh-GaSb), focusing on the effects of a magnetic fiheld parallel to the tunneling current, that is, perpendicular to the materials

  1. A method to reproduce alpha-particle spectra measured with semiconductor detectors.

    Science.gov (United States)

    Timón, A Fernández; Vargas, M Jurado; Sánchez, A Martín

    2010-01-01

    A method is proposed to reproduce alpha-particle spectra measured with silicon detectors, combining analytical and computer simulation techniques. The procedure includes the use of the Monte Carlo method to simulate the tracks of alpha-particles within the source and in the detector entrance window. The alpha-particle spectrum is finally obtained by the convolution of this simulated distribution and the theoretical distributions representing the contributions of the alpha-particle spectrometer to the spectrum. Experimental spectra from (233)U and (241)Am sources were compared with the predictions given by the proposed procedure, showing good agreement. The proposed method can be an important aid for the analysis and deconvolution of complex alpha-particle spectra. Copyright 2009 Elsevier Ltd. All rights reserved.

  2. Study of 50 GeV proton ionization loss by semiconductor detector with smoothly tunable thickness

    Energy Technology Data Exchange (ETDEWEB)

    Nazhmudinov, R.M.; Kubankin, A.S. [Belgorod National Research University, Belgorod (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Shchagin, A.V., E-mail: shchagin@kipt.kharkov.ua [Belgorod National Research University, Belgorod (Russian Federation); Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Shul' ga, N.F.; Trofymenko, S.V. [Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Kharkov National University, Kharkov (Ukraine); Britvich, G.I.; Durum, A.A.; Kostin, M. Yu.; Maisheev, V.A.; Chesnokov, Yu.A.; Yanovich, A.A. [Institute for High Energy Physics in National Research Centre Kurchatov Institute, Protvino (Russian Federation)

    2017-01-15

    The possibility of the measurement of proton ionization loss in the Silicon (Si) layer of smoothly tunable thickness was demonstrated in an experiment with a 50-GeV proton beam. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high-voltage power supply was used in the experiment. The measured spectra of ionization loss are discussed and compared with the calculated spectra. The possibilities of research of the evolution of electromagnetic field of ultrarelativistic particles traversing the media interface and the study of dynamics of particles moving in the channeling regime or the volume reflection regime with the use of detectors with smoothly tunable thickness are indicated.

  3. Fluorocarbon evaporative cooling developments for the ATLAS pixel and semiconductor tracking detectors

    CERN Document Server

    Anderssen, E; Berry, S; Bonneau, P; Bosteels, Michel; Bouvier, P; Cragg, D; English, R; Godlewski, J; Górski, B; Grohmann, S; Hallewell, G D; Hayler, T; Ilie, S; Jones, T; Kadlec, J; Lindsay, S; Miller, W; Niinikoski, T O; Olcese, M; Olszowska, J; Payne, B; Pilling, A; Perrin, E; Sandaker, H; Seytre, J F; Thadome, J; Vacek, V

    1999-01-01

    Heat transfer coefficients 2-5.103 Wm-2K-1 have been measured in a 3.6 mm I.D. heated tube dissipating 100 Watts - close to the full equivalent power (~110 W) of a barrel SCT detector "stave" - over a range of power dissipations and mass flows in the above fluids. Aspects of full-scale evaporative cooling circulator design for the ATLAS experiment are discussed, together with plans for future development.

  4. Ge-semiconductor detectors with a p-implanted n+-contact

    International Nuclear Information System (INIS)

    Protic, D.; Riepe, G.

    1979-01-01

    P-implanted large-surface-detectors with improved properties can be produced by implantation of the n + -contact with relatively low dose and high energy. After an annealing process a nearly perfect lattice structure is obtained. By a subsequent p-implantation step with high dose and low energy, the surface restisivity can be reduced. The p + -contacts are obtained by B-implantation. (DG) [de

  5. Optimizing the design and analysis of cryogenic semiconductor dark matter detectors for maximum sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Pyle, Matt Christopher [Stanford Univ., CA (United States)

    2012-01-01

    In this thesis, we illustrate how the complex E- field geometry produced by interdigitated electrodes at alternating voltage biases naturally encodes 3D fiducial volume information into the charge and phonon signals and thus is a natural geometry for our next generation dark matter detectors. Secondly, we will study in depth the physics of import to our devices including transition edge sensor dynamics, quasi- particle dynamics in our Al collection fins, and phonon physics in the crystal itself so that we can both understand the performance of our previous CDMS II device as well as optimize the design of our future devices. Of interest to the broader physics community is the derivation of the ideal athermal phonon detector resolution and it's T3 c scaling behavior which suggests that the athermal phonon detector technology developed by CDMS could also be used to discover coherent neutrino scattering and search for non-standard neutrino interaction and sterile neutrinos. These proposed resolution optimized devices can also be used in searches for exotic MeV-GeV dark matter as well as novel background free searches for 8GeV light WIMPs.

  6. Novel Approach to Front Contact Passivation for CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason

    2018-02-18

    The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

  7. Development of a counting pixel detector for 'Digitales Roentgen'

    International Nuclear Information System (INIS)

    Lindner, M.

    2001-08-01

    The development of a single photon counting X-ray imaging detector for medical applications using hybrid pixel detectors is reported. The electronics development from the first prototype derived from detector development for particle physics experiments (ATLAS) to the imaging chip MPEC (multi picture element counters) for medical applications is described. This chip consists of 32 x 32 pixels of 200 μm x 200 μm size, each containing the complete read out electronics, i.e. an amplifier, two discriminators with adjustable thresholds and two 18-bit linear feedback shift-counters allowing energy windowing for contrast increase. Results on electronics performance are shown as well as measurements with several semiconductor materials (Si, GaAs, CdTe). Important aspects like detection efficiency, sensor homogeneity, linearity and spatial resolution are discussed. (orig.)

  8. International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016)

    CERN Document Server

    Rossi, Leonardo; PIXEL2016

    2016-01-01

    The workshop will cover various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics and Astrophysics, and for X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics, environmental control and construction techniques. Emerging technologies, such as monolithic and HV&HR CMOS, will also be treated. Will be published in: http://pos.sissa.it/

  9. Semiconductor detectors for observation of multi-MeV protons and ions produced by lasers

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Klir, D.; De Marco, Massimo; Cikhardt, J.; Velyhan, Andriy; Řezáč, Karel; Pfeifer, Miroslav; Krouský, Eduard; Ryć, L.; Dostál, Jan; Kaufman, Jan; Ullschmied, Jiří; Limpouch, J.

    2016-01-01

    Roč. 3, č. 1 (2016), 9-11 ISSN 2336-2626 R&D Projects: GA ČR GA16-07036S; GA MŠk EF15_008/0000162; GA MŠk(CZ) LD14089 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-accelerated ions * ion collectors * SiC detectors * similarity relations * electromagnetic pulse Subject RIV: BL - Plasma and Gas Discharge Physics

  10. Amplitude and rise time compensated timing optimized for large semiconductor detectors

    International Nuclear Information System (INIS)

    Kozyczkowski, J.J.; Bialkowski, J.

    1976-01-01

    The ARC timing described has excellent timing properties even when using a wide range e.g. from 10 keV to over 1 MeV. The detector signal from a preamplifier is accepted directly by the unit as a timing filter amplifier with a sensitivity of 1 mV is incorporated. The adjustable rise time rejection feature makes it possible to achieve a good prompt time spectrum with symmetrical exponential shape down to less than 1/100 of the peak value. A complete block diagram of the unit is given together with results of extensive tests of its performance. For example the time spectrum for (1330+-20) keV of 60 Co taken with a 43 cm 3 Ge(Li) detector has the following parameters: fwhm = 2.2ns, fwtm = 4.4 ns and fw (0.01) m = 7.6 ns and for (50 +- 10) keV of 22 Na the following was obtained: fwhm = 10.8 ns, fwtm = 21.6 ns and fw (0.01) m = 34.6 ns. In another experiment with two fast plastic scintillations (NE 102A) and using a 20% dynamic energy range the following was measured: fwhm = 280 ps, fwtm = 470 ps and fw (0.01) m = 70ps. (Auth.)

  11. Holmium-166m: multi-gamma standard to determine the activity of radionuclides in semiconductor detectors

    International Nuclear Information System (INIS)

    Bernardes, Estela Maria de Oliveira

    2001-01-01

    The efficiency and calibration curves as function of gamma-ray energy for a germanium detector are usually established by using many standard gamma ray sources of radionuclides decaying with few gamma rays or radionuclides having complex decay scheme, as 152 Eu or 133 Ba. But these radionuclides cannot be used alone, because they have a few gamma lines with high intensity and these lines have a irregular distribution in the energy spectrum. 166m Ho is found to be a convenient single source for such calibration, because it decays by β - with subsequent emission of about 40 strong and well distributed gamma lines between 80 and 1500 keV. Moreover, its long half - life (1200 years) and X-rays characteristics between 40 and 50 keV makes it a good standard for calibration of germanium detectors. However, it is necessary to know with accuracy and precision the gamma ray intensities of their main lines, due to the fact that literature has showed discrepant values. Then, a methodology to determine the emission probability of its main lines is proposed by means of combined use of gamma spectrometry and coincidence 4πβ -γ techniques. The experimental results show consistence to the others authors, with lower or compatible uncertainties. (author)

  12. Mounting and testing of a 'sandwich' type neutron spectrometer with semiconductor detectors and 6Li

    International Nuclear Information System (INIS)

    Fabro, M.A.

    1973-01-01

    Commercial surface barrier detectors (Si(Au)) were used to construct the spectrometer; the 6 LiF was evaporated by vacuum onto a film of Formvar and afterwards over the surface of one of the detectors, with a 6 LiF thickness of 0,2 μm (50 μg/cm 2 ) and 1,5 μm(400 μg/cm 2 ) respectively. Tests were made with slow neutrons and with neutrons from the reactions D(d,n) 3 He (2,65 MeV) and T(d,n) 4 He (14 MeV). The energy resolution for thermal neutrons was about 200 keV (FWHM) for the sum (E sub(t) + E sub(α)) and about 7 keV (FWHM) for the difference (E sub(t) - E sub(α)) with an evaluated efficiency of 5,5x10 -4 , for the sum. For the 2,65 MeV neutrons, the energy resolution was about 240 keV (FWHM) and an evaluated efficiency of 2,1 x 10 -7 . It was not possible to detect 14 MeV neutrons [pt

  13. First Investigation on a novel 2D position sensitive semiconductor detector concept

    CERN Document Server

    Bassignana, D; Jaramillo, R; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Vila, I

    2012-01-01

    This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

  14. Detector trends

    International Nuclear Information System (INIS)

    Charpak, G.

    1986-01-01

    The author describes briefly the development of detectors for high energy physics experiments. Especially considered are semiconductor microstrip detectors, drift tubes, holographic bubble chambers, scintillating fiber optics, and calorimeters. (HSI).

  15. Calculation of critical level value for radioactivity detection in gamma spectrometric analysis on the base of semiconductor detectors under the Chernobyl' conditions in 1986-1987

    International Nuclear Information System (INIS)

    Glazunov, V.O.; Rusyaev, R.V.

    1989-01-01

    The problem of determination of radioactivity critical level in a sample by means of gamma spectrometer with semiconductor detector is studied theoretically. The formula for critical level, which shows that it is necessary to know the background pulse counting rate in order to determine the minimum gamma photon pulse counting rates, is derived. Calculations of critical level for the Chernobyl' conditions in time period from October 1986 till July 1987 are made. 8 refs.; 7 figs.; 17 tabs

  16. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-07-01

    Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

  17. Gamma radiation detectors for safeguards applications

    International Nuclear Information System (INIS)

    Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

    2007-01-01

    The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

  18. Design considerations for CdTe Nanotetrapods as electronic devices. krogstrup@fys.ku.dk.

    Science.gov (United States)

    Teich-McGoldrick, S L; Bellanger, M; Caussanel, M; Tsetseris, L; Pantelides, S T; Glotzer, S C; Schrimpf, R D

    2009-11-01

    We investigate the feasibility of using CdTe nanotetrapods as circuit elements using models and simulation at multiple scales. Technology computer-aided design tools are used to simulate the electrical behavior for both metal-semiconductor field-effect transistors and junction field-effect transistors. Our results show that by varying the doping concentrations and material composition, CdTe nanotetrapods have the potential to be useful circuit elements. Monte Carlo simulations provide insight into how control over interparticle and particle-substrate interactions can lead to the directed assembly of ordered arrays of electrically gated nanotetrapods.

  19. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  20. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2016-10-15

    II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  1. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    International Nuclear Information System (INIS)

    Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

    2016-01-01

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  2. The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

    International Nuclear Information System (INIS)

    Moorhead, G.F.

    1995-01-01

    This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

  3. Electrochemical Determination of Uric Acid at CdTe Quantum Dot Modified Glassy Carbon Electrodes.

    Science.gov (United States)

    Pan, Deng; Rong, Shengzhong; Zhang, Guangteng; Zhang, Yannan; Zhou, Qiang; Liu, Fenghai; Li, Miaojing; Chang, Dong; Pan, Hongzhi

    2015-01-01

    Cyclic voltammetry and differential pulse voltammetry were used to investigate the electrochemical behavior of uric acid (UA) at a CdTe quantum dot (QD) modified the glassy carbon electrode (GCE). CdTe QDs, as new semiconductor nanocrystals, can greatly improve the peak current of UA. The anodic peak current of UA was linear with its concentration between 1.0×10(-6) and 4.0×10(-4) M in 0.1 M pH 5.0 phosphate buffer solution. The LOD for UA at the CdTe electrode (1.0×10(-7) M) was superior to that of the GCE. In addition, we also determined the effects of scan rate, pH, and interferences of UA for the voltammetric behavior and detection. The results indicated that modified electrode possessed excellent reproducibility and stability. Finally, a new and efficient electrochemical sensor for detecting UA was developed.

  4. Metastability and reliability of CdTe solar cells

    Science.gov (United States)

    Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

    2018-04-01

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

  5. Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

    Directory of Open Access Journals (Sweden)

    Cecilia Stahl Vieira

    2011-03-01

    Full Text Available Semiconductor nanoparticles, such as quantum dots (QDs, were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells, giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM is optimal for bioimaging, whereas a high concentration (200 μM CdTe could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

  6. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  7. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    CERN Document Server

    Cesareo, R; Castellano, A

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd sub 1 sub - sub x Zn sub x Te and HgI sub 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 mu m, an area of about 2x3 mm sup 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 mu m. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching approx 9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd sub 1 sub - sub x Zn sub x Te detector ha...

  8. SiliPET: Design of an ultra-high resolution small animal PET scanner based on stacks of semi-conductor detectors

    International Nuclear Information System (INIS)

    Cesca, N.; Auricchio, N.; Di Domenico, G.; Zavattini, G.; Malaguti, R.; Andritschke, R.; Kanbach, G.; Schopper, F.

    2007-01-01

    We studied with Monte Carlo simulations, using the EGSnrc code, a new scanner for small animal positron emission tomography (PET), based on stacks of double-sided semiconductor detectors. Each stack is composed of planar detectors with dimension 70x60x1 mm 3 and orthogonal strips on both sides with 500 μm pitch to read the two interaction coordinates, the third being the detector number in the stack. Multiple interactions in a stack are discarded. In this way, we achieve a precise determination of the first interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results of scanners based on Si planar detectors are presented and the initial tomographic reconstructions demonstrate very good spatial resolution limited only by the positron range. This suggests that, this is a promising new approach for small animal PET imaging. We are testing some double-sided silicon detectors, equipped with 128 orthogonal p and n strips on opposite sides using VATAGP3 ASIC by IDEAS

  9. Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

    Science.gov (United States)

    Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M. C.; Soufflet, F.; Le Mer, I.

    2009-10-01

    In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 °C and biased at -500 V.

  10. Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

    International Nuclear Information System (INIS)

    Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M.C.; Soufflet, F.; Le Mer, I.

    2009-01-01

    In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

  11. Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

    Energy Technology Data Exchange (ETDEWEB)

    Meuris, A. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)], E-mail: aline.meuris@cea.fr; Limousin, O. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Lugiez, F.; Gevin, O. [CEA, Irfu, Service d' Electronique, de Detecteurs et d' Informatique, F-91191 Gif-sur-Yvette (France); Blondel, C.; Pinsard, F. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Vassal, M.C.; Soufflet, F. [3D Plus, 641 rue Helene Boucher, F-78532 Buc (France); Le Mer, I. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)

    2009-10-21

    In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm{sup 2} Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

  12. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  13. Trends in the design of front-end systems for room temperature solid state detectors

    International Nuclear Information System (INIS)

    Manfredi, Pier F.; Re, Valerio

    2003-01-01

    The paper discusses the present trends in the design of low-noise front-end systems for room temperature semiconductor detectors. The technological advancement provided by submicron CMOS and BiCMOS processes is examined from several points of view. The noise performances are a fundamental issue in most detector applications and suitable attention is devoted to them for the purpose of judging whether or not the present processes supersede the solutions featuring a field-effect transistor as a front-end element. However, other considerations are also important in judging how well a monolithic technology suits the front-end design. Among them, the way a technology lends itself to the realization of additional functions, for instance, the charge reset in a charge-sensitive loop or the time-variant filters featuring the special weighting functions that may be requested in some applications of CdTe or CZT detectors

  14. Development of a stable and sensitive semiconductor detector by using a mixture of lead(II) iodide and lead monoxide for NDT radiation dose detection

    Science.gov (United States)

    Heo, Y. J.; Kim, K. T.; Han, M. J.; Moon, C. W.; Kim, J. E.; Park, J. K.; Park, S. K.

    2018-03-01

    .59% and 0.25% at 6 and 15 MV, respectively. Based on its selection in the reproducibility assessment, the 15 wt% PbO detector showed no dependence on the dose-rate changes, with R-SD semiconductors.

  15. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  16. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  17. Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

    Directory of Open Access Journals (Sweden)

    Juan P Monrás

    Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

  18. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  19. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    International Nuclear Information System (INIS)

    Entine, G.

    1980-01-01

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder

  20. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  1. A prototype small CdTe gamma camera for radioguided surgery and other imaging applications.

    Science.gov (United States)

    Tsuchimochi, Makoto; Sakahara, Harumi; Hayama, Kazuhide; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

    2003-12-01

    Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mmx166 mmx65 mm. The effective visual field was 44.8 mmx44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV (99mTc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56 +/- 0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating

  2. A prototype small CdTe gamma camera for radioguided surgery and other imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchimochi, Makoto; Hayama, Kazuhide [Department of Oral and Maxillofacial Radiology, The Nippon Dental University School of Dentistry at Niigata, 1-8 Hamaura-cho, 951-8580, Niigata (Japan); Sakahara, Harumi [Department of Radiology, Hamamatsu University School of Medicine, Hamamatsu (Japan); Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi [Acrorad Co. Ltd., Tokyo (Japan); Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar [Integrated Detector and Electronics A.S (IDE AS), Hovik (Norway)

    2003-12-01

    Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mm x 166 mm x 65 mm. The effective visual field was 44.8 mm x 44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV ({sup 99m}Tc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56{+-}0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and

  3. A prototype small CdTe gamma camera for radioguided surgery and other imaging applications

    International Nuclear Information System (INIS)

    Tsuchimochi, Makoto; Hayama, Kazuhide; Sakahara, Harumi; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

    2003-01-01

    Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mm x 166 mm x 65 mm. The effective visual field was 44.8 mm x 44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV ( 99m Tc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56±0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating

  4. Detectors - Electronics

    International Nuclear Information System (INIS)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J.

    1998-01-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  5. The detector control system of the ATLAS SemiConductor tracker during macro-assembly and integration

    Czech Academy of Sciences Publication Activity Database

    Abdesselam, A.; Barr, A.; Basiladze, S.; Böhm, Jan; Šťastný, Jan

    2008-01-01

    Roč. 3, - (2008), P02007/1-P02007/29 ISSN 1748-0221 R&D Projects: GA MŠk LA08032; GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : solid state detectors * large detector systems for particle and astroparticle physics * detector control systems Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 0.333, year: 2008

  6. A spectrometer using semi-conductor detectors; study and applications (1963); Spectrometre utilisant les detecteurs a semi-conducteur: etudes et applications (1963)

    Energy Technology Data Exchange (ETDEWEB)

    Roux, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1963-07-01

    The low average energy, 2.5 to 3.5 eV, required to produce one hole-electron pair in a semiconductor allows an accurate measurement of the energy of the ionizing particles. A high resolution spectrometer has been built using semiconductor detectors. The limit of resolution, due to electronics associated to the detector, to the detector itself and to the source of particles is studied here. The present practical limit of resolution of the spectrometer is 1700 elementary electric charges (full width at half maximum of a ray of a spectrum) or 6 keV in terms of energy lost by a particle in a silicon detector. The physical resolution usually obtained is 20 keV (0.33 per cent) with {alpha} particles of the {sup 212}Bi (6.087 MeV). It depends a lot of the kind of detector used. Some results, concerning the background of the detectors and limit of measurements for low energies are given. Various applications are presented: spectrometry {beta}, spectrometry {gamma} and X, spectrometry of mixtures of {alpha} radioactive elements, collection of {alpha} spectra. (author) [French] La faible energie moyenne, 2,5 a 3,5 eV, necessaire pour produire une paire electron-trou dans un semi-conducteur, permet une mesure precise de l'energie des particules ionisantes. Un spectrometre a haute resolution a ete construit utilisant des detecteurs a semi-conducteur. La limitation en resolution due a l'electronique associee au detecteur, au detecteur lui-meme et a la source de particules, est etudiee. La resolution pratique limite actuelle du spectrometre est 1700 charges electriques elementaires (largeur a mi-hauteur d'une raie de spectre) ou 6 keV exprimee en energie perdue par une particule dans un detecteur au silicium. La resolution physique couramment obtenue est de 20 keV (0,33 pour cent) pour les particules {alpha} du bismuth 212 (6,087 MeV). Elle depend beaucoup du detecteur utilise. Quelques resultats sont donnes concernant le mouvement propre des detecteurs et la limitation des

  7. Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

    Science.gov (United States)

    Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

    2018-05-01

    CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

  8. Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

    Science.gov (United States)

    Fang, Yuan; Badal, Andreu; Allec, Nicholas; Karim, Karim S; Badano, Aldo

    2012-01-01

    The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

  9. Maximizing signal-to-noise ratio (SNR) in 3-D large bandgap semiconductor pixelated detectors in optimal and non-optimal filtering conditions

    International Nuclear Information System (INIS)

    Rodrigues, Miesher L.; Serra, Andre da S.; He, Zhong; Zhu, Yuefeng

    2009-01-01

    3-D pixelated semiconductor detectors are used in radiation detection applications requiring spectroscopic and imaging information from radiation sources. Reconstruction algorithms used to determine direction and energy of incoming gamma rays can be improved by reducing electronic noise and using optimum filtering techniques. Position information can be improved by achieving sub-pixel resolution. Electronic noise is the limiting factor. Achieving sub-pixel resolution - position of the interaction better than one pixel pitch - in 3-D pixelated semiconductor detectors is a challenging task due to the fast transient characteristics of these signals. This work addresses two fundamental questions: the first is to determine the optimum filter, while the second is to estimate the achievable sub-pixel resolution using this filter. It is shown that the matched filter is the optimum filter when applying the signal-to-noise ratio criteria. Also, non-optimum filters are studied. The framework of 3-D waveform simulation using the Shockley-Ramo Theorem and the Hecht Equation for electron and hole trapping is presented in this work. This waveform simulator can be used to analyze current detectors as well as explore new ideas and concepts in future work. Numerical simulations show that assuming an electronic noise of 3.3 keV it is possible to subdivide the pixel region into 5x5 sub-pixels. After analyzing these results, it is suggested that sub-pixel information can also improve energy resolution. Current noise levels present the major drawback to both achieve sub-pixel resolution as well as improve energy resolution below the current limits. (author)

  10. Purification and preparation of bismuth(III) iodide for application as radiation semiconductor detector; Purificacao e preparacao do cristal semicondutor de iodeto de bismuto para aplicacao como detector de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, Caue de Mello

    2016-11-01

    This study describes the experimental procedure of a BiI{sub 3} purification method powder, aiming a future application of these semiconductor crystals as room temperature radiation detector. The Repeated Vertical Bridgman Technique was applied for the purification, based on the melting and nucleation phenomena. An ampoule filled with a maximum of 25% by volume of BiI{sub 3} powder was mounted into the Bridgman furnace and vertically moved at a speed of 2 millimeters per hour, inside the furnace with programmed thermal gradient and temperature profile, at a temperature maximum of 530 deg C. The reduction of the impurities in the BiI{sub 3}, each purification, was analysed by Instrumental Neutron Activation Analysis (INAA), in order to evaluate the efficiency of the purification technique established in this work, for trace metal impurities. It was demonstrated that the Repeated Bridgman is effective to reduce the concentration of many impurities in BiI{sub 3}, such as Ag, As, Br, Cr, K, Mo, Na and Sb. The crystalline structure of the BiI{sub 3} crystal purified twice and third times was similar to the BiI{sub 3} pattern. However, for BiI{sub 3} powder and purified once an intensity contribution of the BiOI was observed in the diffractograms. It is known that semiconductor detectors fabricated from high purity crystal exhibit significant improvement in their performance compared to those produced from low purity crystals. (author)

  11. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Science.gov (United States)

    Zajicek, J.; Burian, M.; Soukup, P.; Novak, V.; Macko, M.; Jakubek, J.

    2017-01-01

    Multimodal medical imaging based on Magnetic Resonance is mainly combinated with one of the scintigraphic method like PET or SPECT. These methods provide functional information whereas magnetic resonance imaging provides high spatial resolution of anatomical information or complementary functional information. Fusion of imaging modalities allows researchers to obtain complimentary information in a single measurement. The combination of MRI with SPECT is still relatively new and challenging in many ways. The main complication of using SPECT in MRI systems is the presence of a high magnetic field therefore (ferro)magnetic materials have to be eliminated. Furthermore the application of radiofrequency fields within the MR gantry does not allow for the use of conductive structures such as the common heavy metal collimators. This work presents design and construction of an experimental MRI-SPECT insert system and its initial tests. This unique insert system consists of an MR-compatible SPECT setup with CdTe pixelated sensors Timepix tungsten collimators and a radiofrequency coil. Measurements were performed on a gelatine and tissue phantom with an embedded radioisotopic source (57Co 122 keV γ ray) inside the RF coil by the Bruker BioSpec 47/20 (4.7 T) MR animal scanner. The project was performed in the framework of the Medipix Collaboration.

  12. Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

    International Nuclear Information System (INIS)

    Rudge, A.

    1995-01-01

    A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.)

  13. Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Rudge, A. [European Organization for Nuclear Research, Geneva (Switzerland)

    1995-06-01

    A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.).

  14. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  15. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

    2011-10-01

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  16. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  17. Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, W L; Goulding, F S [Lawrence Radiation Laboratory, University of California, Berkeley, CA (United States)

    1962-04-15

    Based on the assumption that the noise contribution of a semiconductor detector is due solely to its bulk properties, equations are presented which indicate the theoretical limits of noise in detectoramplifier combinations. These equations show that an optimum amplifier time-constant and detector bias voltage exist for which condition the minimum noise is independent of the semiconductor resistivity. The optimum performance of a detector-amplifier system is shown to depend only upon detector area, input capacity (less detector capacity), semiconductor minority carrier lifetime and the transconductance of the amplifier input tube. A new detector structure which includes a guard-ring electrode as an integral part of the detector structure is described which has the effect of largely eliminating noise due to surface leakage. Experimental results for detector leakage and energy resolution which agree well with theory are presented. The theoretical limit of noise, expressed as full width at half maximum, is from 7 to 10 keV for 1-cm{sup 2} p-type silicon detectors at 25{sup o}C. (author) [French] Partant de l'hypothese que le bruit imputable au detecteur a semi-conducteur est du exclusivement aux proprietes fondamentales du semi-conducteur, les auteurs etablissent des equations donnant les limites theoriques du bruit dans les combinaisons detecteur-amplificateur. Ces equations montrent qu'il existe une constante de temps optimum de l'amplificateur et une tension de polarisation du detecteur, pour lesquelles le bruit minimum est independant de la resistivite du semi-conducteur. Les auteurs prouvent que l'optimum de fonctionnement d'un ensemble detecteur-amplificateur ne depend que de la surface du detecteur, de la capacite a l'entree (deduction faite de la capacite du detecteur), du porteur minoritaire du semi-conducteur, de la duree de vie et de la transconductance du tube d'entree de l'amplificateur. Ils decrivent un modele nouveau de detecteur qui comprend une

  18. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  19. The diagnosis of the gastric cancer using catheter-type semiconductor radiation detector. Comparison of diagnostic values of. beta. -emitting radionuclide label with. gamma. -emitting label

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R; Iwase, T [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Sugita, T; Iio, M

    1975-06-01

    The diagnostic usefulness of /sup 32/P-phosphate for human gastric cancer, using a catheter-type semiconductor radiation detector (CASRAD) combined with gastrofiberscope technique, has already been reported by the authors. They have in addition used sup(99m)Tc-bleomycin, sup(99m)Tc-tetracycline in the diagnosis of experimental rabbit gastric cancer, too. In the present study, further refinement of the technique for the ..beta..-ray labeled substance (/sup 32/P-phosphate) for detection of the gastric cancer was compared with that of ..gamma..-ray labeled substance (sup(99m)Tc-tetracycline). A more correct diagnosis of the gastric cancer by in vivo measurement of beta activity could be obtained, when the collimater, made of stainless steel, was attached to the top of the detector. In this way contribution to the count from the adjacent tissues or organs could be eliminated. They were unable to produce an effective and useful collimater for ..gamma..-ray labeled substance which could to be used safely in vivo. Because of the unsatisfactory collimater, radioactivities of the adjacent organs caused on increase in the radioactivity of the background. Therefore inspite of the recent introduction of various sup(99m)Tc-tumor agents, these labels were not applicable to the CASRAD method. For such a small detector system, ..beta..-labels, represented by /sup 32/P-phosphate, was still prefererable to ..gamma..-labels.

  20. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  1. Photoluminescence measurement of polycrystalline CdTe made of high purity source material

    Energy Technology Data Exchange (ETDEWEB)

    Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

    2012-07-01

    CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

  2. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A; Rosencrantz, B

    1964-10-15

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

  3. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    International Nuclear Information System (INIS)

    Lauber, A.; Rosencrantz, B.

    1964-10-01

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

  4. ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

    Science.gov (United States)

    De Jesus, Joel

    The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of

  5. Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

    CERN Document Server

    Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

    1999-01-01

    Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime (mu tau) product and the energy required to create an electron-hole pair (the epsilon value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV gamma-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the epsilon value has been estimated to be about 5.85 eV for the TlBr crystal.

  6. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  7. Excimer laser doping technique for application in an integrated CdTe imaging device

    CERN Document Server

    Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

  8. Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

    Science.gov (United States)

    2015-05-14

    calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

  9. Semiconductor detector with smoothly tunable effective thickness for the study of ionization loss by moderately relativistic electrons

    Energy Technology Data Exchange (ETDEWEB)

    Shchagin, A.V., E-mail: shchagin@kipt.kharkov.ua [Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Belgorod National Research University, Belgorod (Russian Federation); Shul’ga, N.F.; Trofymenko, S.V. [Kharkov Institute of Physics and Technology, Kharkov (Ukraine); Kharkov National University, Kharkov (Ukraine); Nazhmudinov, R.M.; Kubankin, A.S. [Belgorod National Research University, Belgorod (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation)

    2016-11-15

    The possibility of measurement of electrons ionization loss in Si layer of smoothly tunable thickness is shown in the proof-of-principle experiment. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high voltage power supply has been used. Ionization loss spectra for electrons emitted by radioactive source {sup 207}Bi are presented and discussed. Experimental results for the most probable ionization loss in the Landau spectral peak are compared with theoretical calculations. The possibility of research of evolution of electromagnetic field of ultra-relativistic particles traversing media interface with the use of detectors with smoothly tunable thickness is proposed.

  10. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Czech Academy of Sciences Publication Activity Database

    Zajíček, J.; Burian, M.; Soukup, P.; Novák, Vladimír; Macko, M.; Jakůbek, J.

    2017-01-01

    Roč. 12, January (2017), č. článku P01015. ISSN 1748-0221 Institutional support: RVO:68378297 Keywords : Gamma camera * SPECT * PET PET /CT * coronary CT angiography (CTA) * Gamma detectors (scintillators, CZT, HPG, HgI etc) * multi-modality systems * pixelated detectors and associated VLSI electronics Subject RIV: JB - Sensors, Measurment, Regulation OBOR OECD: Electrical and electronic engineering Impact factor: 1.220, year: 2016 http://iopscience.iop.org/article/10.1088/1748-0221/12/01/P01015

  11. Diagnosis of the gastric cancer by radionuclides and their labels, using catheter-type semiconductor radiation detector (CASRAD)

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Iio, M; Sugita, T

    1980-08-01

    A new method of differential diagnosis of gastric cancer was reported. After intravenous /sup 32/P administration, lesions were counted by a small catheter-type radiation detector system under gastrofiberscopic direct vision control. Optimum counting time was examined in man and it was found to be between 20 to 50 hours after intravenous administration of /sup 32/P. With the currently available technology of miniature detectors, the ..beta..-emitting carcinophilic agent was still found to be the agent of choice to this end, since ..gamma..-emitting carcinophilic agents cannot provide data originated only from the gastric mucosa in question.

  12. Advanced radiation detector development mercuric iodide, silicon with internal gain, hybrid scintillator/semiconductor detectors. Comprehensive summary report, 1976-1985

    International Nuclear Information System (INIS)

    Huth, G.C.; Dabrowski, A.J.

    1985-01-01

    Accomplishments are reported in the development of a compound semi-insulator mercuric iodide (HgI 2 ) for nuclear radiation detection and spectroscopy, early lung cancer detection and localization in the uranium miner/worker population, computer digital image processing and image reconstruction research, and a concept for multiple, filtered x-ray computed tomography scanning to reveal chemical compositional information. Another area of interest is the study of new advances in the area of silicon detectors with internal gain (''avalanche'')

  13. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    Rosaz, M.

    1997-01-01

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  14. Characterization of imaging pixel detectors of Si and CdTe read out with the counting X-ray chip MPEC 2.3; Charakterisierung von bildgebenden Pixeldetektoren aus Si und CdTe ausgelesen mit dem zaehlenden Roentgenchip MPEC 2.3

    Energy Technology Data Exchange (ETDEWEB)

    Loecker, M.

    2007-04-15

    Single photon counting detectors with Si- and CdTe-sensors have been constructed and characterized. As readout chip the MPEC 2.3 is used which consists of 32 x 32 pixels with 200 x 200 {mu}m{sup 2} pixel size and which has a high count rate cabability (1 MHz per pixel) as well as a low noise performance (55 e{sup -}). Measurements and simulations of the detector homogeneity are presented. It could be shown that the theoretical maximum of the homogeneity is reached (quantum limit). By means of the double threshold of the MPEC chip the image contrast can be enhanced which is demonstrated by measurement and simulation. Also, multi-chip-modules consisting of 4 MPEC chips and a single Si- or CdTe-sensor have been constructed and successfully operated. With these modules modulation-transfer-function measurements have been done showing a good spatial resolution of the detectors. In addition, multi-chip-modules according to the Sparse-CMOS concept have been built and tests characterizing the interconnection technologies have been performed.

  15. Resolution limits achievable with CMOS front-end in X- and γ-ray analysis with semiconductor detectors

    International Nuclear Information System (INIS)

    Manfredi, P.F.; Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.

    2003-01-01

    During the past 15 years, the CMOS technologies have provided the most widely followed approach to signal processing with microstrip detectors. In more recent times, CMOS front-end systems have been developed to acquire and process signals from pixel detectors. During the past few years, the favor toward CMOS processes in their applications in the broad area of detector signal processing has been enhanced by the technological advancement known as device scaling and by two aspects connected to it. One is the shrinking in channel length L into the deep submicron region. The second one is the related reduction in the gate-oxide thickness t ox to a few nm. The reduction in t ox has, as a consequence of primary importance, a decreased 1/f-noise contribution to the equivalent noise charge (ENC). The thinner gate-oxide and the shrinking in gate length, in some regions of operations, concur to increase the transconductance of the device, which results in a smaller ENC contribution from channel thermal noise. The goal of the present paper is to address the question of whether or not the most advanced CMOS processes may meet the requirements set by high resolution, high dynamic range applications like the energy-dispersive photon analysis with solid-state detectors of comparatively large capacitance

  16. Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Hattori, Takatoshi; Ishii, Keiichiro [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab.

    1988-12-01

    In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).

  17. Optimal configuration of a low-dose breast-specific gamma camera based on semiconductor CdZnTe pixelated detectors

    Science.gov (United States)

    Genocchi, B.; Pickford Scienti, O.; Darambara, DG

    2017-05-01

    Breast cancer is one of the most frequent tumours in women. During the ‘90s, the introduction of screening programmes allowed the detection of cancer before the palpable stage, reducing its mortality up to 50%. About 50% of the women aged between 30 and 50 years present dense breast parenchyma. This percentage decreases to 30% for women between 50 to 80 years. In these women, mammography has a sensitivity of around 30%, and small tumours are covered by the dense parenchyma and missed in the mammogram. Interestingly, breast-specific gamma-cameras based on semiconductor CdZnTe detectors have shown to be of great interest to early diagnosis. Infact, due to the high energy, spatial resolution, and high sensitivity of CdZnTe, molecular breast imaging has been shown to have a sensitivity of about 90% independently of the breast parenchyma. The aim of this work is to determine the optimal combination of the detector pixel size, hole shape, and collimator material in a low dose dual head breast specific gamma camera based on a CdZnTe pixelated detector at 140 keV, in order to achieve high count rate, and the best possible image spatial resolution. The optimal combination has been studied by modeling the system using the Monte Carlo code GATE. Six different pixel sizes from 0.85 mm to 1.6 mm, two hole shapes, hexagonal and square, and two different collimator materials, lead and tungsten were considered. It was demonstrated that the camera achieved higher count rates, and better signal-to-noise ratio when equipped with square hole, and large pixels (> 1.3 mm). In these configurations, the spatial resolution was worse than using small pixel sizes (< 1.3 mm), but remained under 3.6 mm in all cases.

  18. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    International Nuclear Information System (INIS)

    James, Ralph

    2010-01-01

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  19. Detector applications

    International Nuclear Information System (INIS)

    Pehl, R.H.

    1977-10-01

    Semiconductor detectors are now applied to a very wide range of problems. The combination of relatively low cost, excellent energy resolution, and simultaneous broad energy-spectrum analysis is uniquely suited to many applications in both basic and applied physics. Alternative techniques, such as magnetic spectrometers for charged-particle spectroscopy, while offering better energy resolution, are bulky, expensive, and usually far more difficult to use. Furthermore, they do not directly provide the broad energy-spectrum measurements easily accomplished using semiconductor detectors. Scintillation detectors, which are approximately equivalent to semiconductor detectors in convenience and cost, exhibit 10 to 100 times worse energy resolution. However, their high efficiency and large potential size recommend their use in some measurements

  20. Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker

    Czech Academy of Sciences Publication Activity Database

    Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2005-01-01

    Roč. 552, - (2005), s. 292-328 ISSN 0168-9002 R&D Projects: GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : front-end electronics * binary readout * silicon strip detectors * application specific integrated circuits * quality assurance Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  1. LHC1: a semiconductor pixel detector readout chip with internal, tunable delay providing a binary pattern of selected events

    International Nuclear Information System (INIS)

    Heijne, E.H.M.; Antinori, F.; Barberis, D.

    1996-01-01

    The Omega3/LHC1 pixel detector readout chip comprises a matrix of 128 x 16 readout cells of 50 μm x 500 μm and peripheral functions with 4 distinct modes of initialization and operation, together more than 800 000 transistors. Each cell contains a complete chain of amplifier, discriminator with adjustable threshold and fast-OR output, a globally adjustable delay with local fine-tuning, coincidence logic and memory. Every cell can be individually addressed for electrical test and masking. First results have been obtained from electrical tests of a chip without detector as well as from source measurements. The electronic noise without detector is ∼100 e - rms. The lowest threshold setting is close to 2000 e - and non-uniformity has been measured to be better than 450 e - rms at 5000 e - threshold. A timewalk of <10 ns and a precision of <6 ns rms on a delay of 2 μs have been measured. The results may be improved by further optimization. (orig.)

  2. The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

    Directory of Open Access Journals (Sweden)

    Haoyang Cui

    2013-01-01

    Full Text Available The transient photovoltaic (PV characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

  3. In vivo dosimetry with semiconductor and thermoluminescent detectors applied to head and neck cancer treatment; Dosimetria in vivo com uso de detectores semicondutores e termoluminescentes aplicada ao tratamento de cancer de cabeca e pescoco

    Energy Technology Data Exchange (ETDEWEB)

    Viegas, Claudio Castelo Branco

    2003-03-15

    In vivo dosimetry in radiotherapy, i. e, the assessment of the doses received by patients during their treatments, permits a verification of the therapy quality. A routine of in vivo dosimetry is, undoubtedly, a direct benefit for the patient. Unfortunately, in Brazil and in Latin America this procedure is still a privilege for only a few patients. This routine is of common application only in developed countries. The aim of this work is to show the viability and implementation of a routine in vivo dosimetry, using diodes semiconductors and thermoluminescent dosimeters (TLD), at the radiotherapy section of the National Institute of Cancer in Brazil, in the case of head and neck cancer treatment. In order to reach that aim, the characteristics of the response of diodes ISORAD-p and LiF:Mg;Ti (TLD-100) thermoluminescent detectors in powder form were determined. The performance of those detectors for in vivo dosimetry was tested using an RANDO Alderson anthropomorfic phantom and, once their adequacy proved for the kind of measurements proposed, they were used for dose assessment in the case of tumour treatments in the head and neck regions, for Cobalt-60 irradiations. (author)

  4. Thermoelectrically cooled semiconductor detectors for non-destructive analysis of works of art by means of energy dispersive X-ray fluorescence

    International Nuclear Information System (INIS)

    Cesareo, Roberto; Ettore Gigante, Giovanni; Castellano, Alfredo

    1999-01-01

    Thermoelectrically cooled semiconductor detectors, such as Si-PIN, Si-drift, Cd 1-x Zn x Te and HgI 2 , coupled to miniaturized low-power X-ray tubes, are well suited in portable systems for energy-dispersive X-ray fluorescence (EDXRF), analysis of archaeological samples. The Si-PIN detector is characterized by a thickness of about 300 μm, an area of about 2x3 mm 2 , an energy resolution of about 200-250 eV at 5.9 keV and an entrance window of 25-75 μm. The Si-drift detector has approximately the same area and thickness, but an energy resolution of 155 eV at 5.9 keV. The efficiency of these detectors is around 100% from 4 to 10 keV, and then decreases versus energy, reaching ∼9% at 30 keV. Coupled to a miniaturized 10 kV, 0.1 mA, Ca-anode or to a miniaturized 30 kV, 0.1 mA, W-anode X-ray tubes, portable systems can be constructed, which are able to analyse K-lines of elements up to about silver, and L-lines of heavy elements. The Cd 1-x Zn x Te detector has an area of 4 mm 2 and a thickness of 3 mm. It has an energy resolution of about 300 eV at 5.9 keV, and an efficiency of 100% over the whole range of X-rays. Finally the HgI 2 detector has an efficiency of about 100% in the whole range of X-rays, and an energy resolution of about 200 eV at 5.9 keV. Coupled to a small 50-60 kV, 1 mA, W-anode X-ray tube, portable systems can be constructed, for the analysis of practically all elements. These systems were applied to analysis in the field of archaeometry and in all applications for which portable systems are needed or at least useful (for example X-ray transmission measurements, X-ray microtomography and so on). Results of in-field use of these detectors and a comparison among these room temperature detectors in relation to concrete applications are presented. More specifically, concerning EDXRF analysis, ancient gold samples were analysed in Rome, in Mexico City and in Milan, ancient bronzes in Sassari, in Bologna, in Chieti and in Naples, and sulfur (due to

  5. Neutron detection with cryogenics and semiconductors

    International Nuclear Information System (INIS)

    Bell, Zane W.; Carpenter, D.A.; Cristy, S.S.; Lamberti, V.E.; Burger, Arnold; Woodfield, Brian F.; Niedermayr, Thomas; Dragos Hau, I.; Labov, Simon E.; Friedrich, Stephan; Geoffrey West, W.; Pohl, Kenneth R.; Berg, Lodewijk van den

    2005-01-01

    The common methods of neutron detection are reviewed with special attention paid to the application of cryogenics and semiconductors to the problem. The authors' work with LiF- and boron-based cryogenic instruments is described as well as the use of CdTe and HgI 2 for direct detection of neutrons. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

    Science.gov (United States)

    Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

    2018-01-01

    The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

  7. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Yanfa, E-mail: yanfa.yan@utoledo.edu; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R. [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); Li, Chen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Poplawsky, Jonathan [The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Wang, Zhiwei [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Moseley, John; Guthrey, Harvey; Moutinho, Helio; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Pennycook, Stephen J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2015-03-21

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  8. Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

    Science.gov (United States)

    Soti, G.; Wauters, F.; Breitenfeldt, M.; Finlay, P.; Kraev, I. S.; Knecht, A.; Porobić, T.; Zákoucký, D.; Severijns, N.

    2013-11-01

    Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to β particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.

  9. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  10. Application of a radiation detector in the interdisciplinary study. 1. Portable fluorescent X-ray analysis using the Si-PIN photodiode

    International Nuclear Information System (INIS)

    Ito, Yutaka

    2000-01-01

    As a semiconductor used for X-ray detector has excellent resolution, it must be cooled by liquid nitrogen at its use, which is a limitation on its actual use and applications. Then, a compound detector with wider bandwidth such as CdTe and HgI 2 has conventionally been used to attempt to use the detector at room temperature. Here was adopted an Si-PIN photodiode for a representative small type semiconductor detector unnecessary for liquid nitrogen, to introduce small and portable fluorescent X-ray analyzer for its application. As Si-PIN can work at room temperature, it has large leak current and insufficiently spread empty phase, so it is used by cooling due to Peltier element and so on. Then, here was used an X-ray detector, XR-100CR of AMPTEK Inc. composed of Si-PIN photodiode and a Pre-AMP. And, for a portable fluorescent X-ray analyzer, the Si-PIN photodiode detector of AMPTEK Inc., and a closely sealed small radiation source of 50 μ Ci 241 Am for excitation of X-ray in specimen were used. Its working principle consists of excitation of elements in a specimen with X- and gamma-ray from 241 Am, and detection of emitted fluorescent X-ray with Si-PIN photodiode. (G.K.)

  11. Ion implantation of CdTe single crystals

    International Nuclear Information System (INIS)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2017-01-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  12. Growth and analysis of micro and nano CdTe arrays for solar cell applications

    Science.gov (United States)

    Aguirre, Brandon Adrian

    CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

  13. Segmented-spectrum detection mechanism for medical x-ray in CdTe

    Science.gov (United States)

    Shi, Zaifeng; Meng, Qingzhen; Cao, Qingjie; Yao, Suying

    2016-01-01

    This paper presents a segmented X-ray spectrum detection method based on a layered X-ray detector in Cadmium Telluride (CdTe) substrate. We describe the three-dimensional structure of proposed detector pixel and investigate the matched spectrum-resolving method. Polychromatic X-ray beam enter the CdTe substrate edge on and will be absorbed completely in different thickness varying with photon energy. Discrete potential wells are formed under external controlling voltage to collect the photo-electrons generated in different layers, and segmented X-ray spectrum can be deduced from the quantity of photo-electrons. In this work, we verify the feasibility of the segmented-spectrum detection mechanism by simulating the absorption of monochromatic X-ray in a CdTe substrate. Experiments in simulation show that the number of photo-electrons grow exponentially with the increase of incident thickness, and photons with different energy will be absorbed in various thickness. The charges generated in different layers are collected into adjacent potential wells, and collection efficiency is estimated to be about 87% for different incident intensity under the 40000V/cm electric field. Errors caused by charge sharing between neighboring layers are also analyzed, and it can be considered negligible by setting appropriate size of electrodes.

  14. Structural and luminescent properties of Fe3+ doped PVA capped CdTe nanoparticles

    Directory of Open Access Journals (Sweden)

    Ravindranadh K.

    2017-07-01

    Full Text Available During recent decades, magnetic and semiconductor nanoparticles have attracted significant attention of scientists in various fields of engineering, physics, chemistry, biology and medicine. Fe3+ doped PVA capped CdTe nanoparticles were prepared by co-precipitation method and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Fe3+ ions in the host lattice and the luminescent properties of prepared sample. Powder XRD data revealed that the crystal structure belongs to a cubic system and its lattice cell parameters were evaluated. The average crystallite size was estimated to be 8 nm. The morphology of prepared samples was analyzed by using SEM and TEM investigations. Functional groups of the prepared sample were observed in FT-IR spectra. Optical absorption and EPR studies have shown that on doping, Fe3+ ions enter the host lattice in octahedral site symmetry. PL studies of Fe3+ doped PVA capped CdTe nanoparticles revealed UV and blue emission bands. CIE chromaticity coordinates were also calculated from the emission spectrum of Fe3+ doped PVA capped CdTe nanoparticles.

  15. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  16. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    Energy Technology Data Exchange (ETDEWEB)

    Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-01-15

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  17. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  18. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  19. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  20. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure

    International Nuclear Information System (INIS)

    Fernandes, Jaquiel Salvi

    2005-02-01

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of 241 Am, 133 Ba, 152 Eu, 3 sources of 137 Cs and soil samples contaminated with 137 Cs. It was performed a factorial planning 2 3 to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 μS and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the 137 Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the 137 Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample 7 Be content the MDA found was 2867 Bq.kg -1 at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the 137 Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured 137 Cs MDA was 71 Bq.kg -1 . For the soil sample 7 Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg -1 . Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma ray spectrometer system allows the quantification of 137 Cs and 7 Be

  1. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    its effect on the optical beam. Computer Tunable optical source Detectors Test MSM detector Lock-in- amplifier Multiplexer Transimpedance ... amplifier Three-way beam splitter L3 sample L1 Light source L4 L2 Reference Detector Reflectance Detector

  2. Positron trapping in heavily irradiated semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.

    1985-01-01

    Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 10 18 e - /cm 2 . Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given

  3. Development of a high sensitivity pinhole type gamma camera using semiconductors for low dose rate fields

    Science.gov (United States)

    Ueno, Yuichiro; Takahashi, Isao; Ishitsu, Takafumi; Tadokoro, Takahiro; Okada, Koichi; Nagumo, Yasushi; Fujishima, Yasutake; Yoshida, Akira; Umegaki, Kikuo

    2018-06-01

    We developed a pinhole type gamma camera, using a compact detector module of a pixelated CdTe semiconductor, which has suitable sensitivity and quantitative accuracy for low dose rate fields. In order to improve the sensitivity of the pinhole type semiconductor gamma camera, we adopted three methods: a signal processing method to set the discriminating level lower, a high sensitivity pinhole collimator and a smoothing image filter that improves the efficiency of the source identification. We tested basic performances of the developed gamma camera and carefully examined effects of the three methods. From the sensitivity test, we found that the effective sensitivity was about 21 times higher than that of the gamma camera for high dose rate fields which we had previously developed. We confirmed that the gamma camera had sufficient sensitivity and high quantitative accuracy; for example, a weak hot spot (0.9 μSv/h) around a tree root could be detected within 45 min in a low dose rate field test, and errors of measured dose rates with point sources were less than 7% in a dose rate accuracy test.

  4. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  5. Photosensitive space charge limited current in screen printed CdTe thin films

    Science.gov (United States)

    Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

    2018-05-01

    Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

  6. CdTe reflection anisotropy line shape fitting

    International Nuclear Information System (INIS)

    Molina-Contreras, J.R.

    2010-01-01

    In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E 1 and E 1 + Δ 1 transition region in II-VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.

  7. Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Xiao; Wang, Hao; Yi, Qinghua; Wang, Yun; Cong, Shan; Zhao, Jie; Sun, Yinghui; Zou, Guifu, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Qian, Zhicheng [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Huang, Jianwen; Xiong, Jie, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Luo, Hongmei [Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, New Mexico 88003 (United States)

    2015-11-16

    Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefits the future development of optoelectronic nanodevices with new functionalities.

  8. Characterization of CdZnTe ambient temperature detectors

    International Nuclear Information System (INIS)

    Lavietes, A.

    1994-09-01

    A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

  9. HP Ge planar detectors

    International Nuclear Information System (INIS)

    Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

    1989-01-01

    Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

  10. Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

    2009-01-07

    This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

  11. Semidetector-radiation detector arrangement, as well as its application in a tomographic scanner, in a device to determine radiation intensity or to measure the radiation penetration or absorption

    International Nuclear Information System (INIS)

    Kaufman, L.; Hosier, K.E. Jr.

    1979-01-01

    The CdTe detector or a plate with several CdTe or HgI 2 detectors is suitable for use in computer controlled tomographic X-ray scanners. The detector is used in connection with a pulsed radiation source (Am 241) and a frequency filter technique for measuring the resulting electrical charge pulse of the detector. Merely a narrow frequency band is selected according to the measured duration of the incident radiation pulses. (DG) [de

  12. Detectors - Electronics; Detecteurs - Electronique

    Energy Technology Data Exchange (ETDEWEB)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

    1998-04-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  13. High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

    International Nuclear Information System (INIS)

    Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shin'ichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka

    2012-01-01

    We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

  14. Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

    Energy Technology Data Exchange (ETDEWEB)

    Rosaz, M

    1997-10-24

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

  15. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  16. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  17. Determination of a natural valence-band offset - The case of HgTe and CdTe

    Science.gov (United States)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  18. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  19. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  20. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    International Nuclear Information System (INIS)

    Gross, Dieter Konrad Michael

    2013-01-01

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL