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Sample records for cdte films electrodeposited

  1. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  2. Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

    International Nuclear Information System (INIS)

    Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

    2005-01-01

    The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

  3. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  4. Electrodeposition of uranium dioxide films

    International Nuclear Information System (INIS)

    Maya, L.; Gonzalez, B.D.; Lance, M.J.; Holcomb, D.E.

    2004-01-01

    Uranium dioxide films in a hydrated form are electrodeposited unto nickel plates starting with a uranyl nitrate solution in ammonium sulfate. The process is incidental to water splitting which is the dominant electrochemical pathway and as a consequence, the uranium deposition is highly dependent on experimental parameters that require close control such as the pH and concentration of the supporting electrolyte as well as current density, and the cell design. (author)

  5. Electrochemical preparation of CdTe semiconductor films from ammoniac-chloride solutions containing 2,2'-dipyridyl

    International Nuclear Information System (INIS)

    Dergacheva, M.B.; Statsyuk, V.N.; Fogel', L.A.

    2007-01-01

    Electrodeposition of CdTe films from ammoniac-chloride buffer electrolytes with 2,2'-dipyridyl additions is studied. Effect of film grains size on light volt-ampere characteristics of CdTe semiconductor compound is studied. Samples prepared from ammoniac-chloride buffer electrolytes with pH 9.2 in the presence of 1· -3 m. 2,2'-dipyridyl demonstrates the best characteristic [ru

  6. The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

    Science.gov (United States)

    Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

    2018-03-01

    The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

  7. Pulse electrodeposition of Prussian Blue thin films

    International Nuclear Information System (INIS)

    Najafisayar, P.; Bahrololoom, M.E.

    2013-01-01

    The effects of pulse electrodeposition parameters like peak current density and frequency on the electrochemical properties of Prussian Blue thin films were investigated. Electrochemical Impedance Spectroscopy, Cyclic Voltammetry and Chronoamperometry tests were carried out on Prussian Blue thin films which were pulse electrodeposited on Indium Tin Oxide coated glass substrates. The results showed that increase in the peak current densities and using higher pulsating frequencies during electrodeposition decreases the charge transfer resistance of the thin films while the diffusion coefficient of electroactive species in the films is increased as a consequence of using the same pulsating parameters. In addition, pulse electrodeposition technique does not alter deposition mechanism and morphology of the Prussian Blue thin films. - Highlights: • Prussian Blue thin films were pulse electrodeposited onto the ITO coated glass. • Pulse current condition affected thin films' electrochemical properties. • High pulsating current and frequency lower thin films' charge transfer resistance. • High pulsating current and frequency increase diffusion coefficient in thin films

  8. Single-phase cadmium telluride thin films deposited by electroless electrodeposition

    International Nuclear Information System (INIS)

    Khrypunov, G.; Klochko, N.; Lyubov, V.; Li, T.; Volkova, N.

    2010-01-01

    Full text : Today cadmium telluride (CdTe) is a leading base material for the fabrication of thin film solar cells. Equally with the creation of traditional thin film photovoltaic devices on the base of CdTe in recent years several approaches have been investigated to develop solar cells with extremely thin (80-500 nm) CdTe absorber (so-called ηE(eta)-solar cells) that offer the potential to reduce recombination losses in the base layers and thus use low cost materials. Until today the CdTe depositions for the η-solar cells manufacture were performed by vapour phase epitaxy under dynamical vacuum at working temperature 750 degrees Celsium or by electrodeposition in the special electrochemical cell equipped with the potentiostat. Development research of simple and inexpensive method for obtaining of the single-phase stoichiometric cadmium telluride films has required an improvement of the electroless electrodeposition technique, which theretofore was characterized by some disadvantages, namely, the CdTe films were polluted by free tellurium additions and the composition of the films was Cd:Te=55:45. So, for the showing up the synthesis of doped or stoichiometric cadmium telluride films conditions and in order to decide the problem of the deposition of single-phase CdTe layers it was researched the electrochemical processes going during electroless electrolysis in sulfate solutions with different acidities and CdSO 4 concentrations. Some film samples during deposition were illuminated by 500 W halogen lamp. Deposition time was 10-15 min. The phase composition and structure of the deposited films were determined by XRD-method, the average sizes of the crystalline grains in the films were estimated using Debye-Scherer formula. The transmittance spectra of the samples were measured by double beam spectrophotometer in the spectral range of 0.6-1.1 μm. Surface morphology of the films was researched by scanning electron microscopy. By means of analysis of the

  9. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  10. Phosphorus introduction mechanism in electrodeposited cobalt films

    International Nuclear Information System (INIS)

    Kravtchenko, Jean-Francois

    1973-01-01

    The cathodic reduction of hypophosphite, phosphite and phosphate ions was studied using chrono-potentiometry and voltammetry. Then cobalt was deposited at constant current from a bath containing one of these three compounds. The current, while giving an electrodeposition of cobalt, also enhances at the same time a chemical deposition of cobalt. It is shown that high coercive forces in cobalt films are much more related to this chemical deposition than to the simple fact that the films contain some phosphorus. (author) [fr

  11. Study of CdTe and HgCdTe thin films obtained by electrochemical methods

    International Nuclear Information System (INIS)

    Guillen, C.

    1990-01-01

    Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

  12. Grain Boundary Engineering of Electrodeposited Thin Films

    DEFF Research Database (Denmark)

    Alimadadi, Hossein

    Grain boundary engineering aims for a deliberate manipulation of the grain boundary characteristics to improve the properties of polycrystalline materials. Despite the emergence of some successful industrial applications, the mechanism(s) by which the boundary specific properties can be improved...... to engineer new materials. In this study, one of the most widely used electrolytes for electrodeposition is chosen for the synthesis of nickel films and based on thorough characterization of the boundaries the potentials in grain boundary engineering are outlined. The internal structure of the nickel films...... of the favorable boundaries that break the network of general grain boundaries. Successful dedicated synthesis of a textured nickel film fulfilling the requirements of grain boundary engineered materials, suggests improved boundary specific properties. However, the textured nickel film shows fairly low...

  13. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  14. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  15. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  16. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  17. Electrodeposition of thin Pd-Ag films

    International Nuclear Information System (INIS)

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  18. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

  19. Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

    International Nuclear Information System (INIS)

    Singh, Ragini Raj; Painuly, Diksha; Pandey, R.K.

    2009-01-01

    Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 ± 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

  20. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  1. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J.U.; Mao, D. [Colorado School of Mines, Golden, CO (United States). Dept. of Physics

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  2. Doped nanostructured zinc oxide films grown by electrodeposition.

    Science.gov (United States)

    Donderis, V; Orozco, J; Cembrero, J; Curiel-Esparza, J; Damonte, L C; Hernández-Fenollosa, M A

    2010-02-01

    ZnO thin films doped with either In or Al are n-type oxide materials of interest for application in electronic devices and thin-film solar cells. In this work, the doped ZnO films were electrodeposited at 80 degrees C from an aqueous solution on polycrystalline conductive Indium Tin Oxide covered glass substrates. The incorporation of the dopants into the ZnO film has been verified by energy dispersive X-ray spectrum, X-Ray diffraction and optical transmission analysis. The optical and surface structure properties of the ZnO doped films are strongly affected by the In and Al concentrations in the electrodeposition solution as evidenced by optical transmission and reflection measurements, and scanning electron microscopy.

  3. Electrodeposited Cu2ZnSnS4 thin films

    CSIR Research Space (South Africa)

    Valdes, M

    2014-05-01

    Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

  4. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  5. Research and development of CdTe based thin film PV solar cells

    Science.gov (United States)

    Diso, Dahiru Garba

    The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

  6. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    International Nuclear Information System (INIS)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al 2 O 3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al 2 O 3 . FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  7. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Gaire, C.; Rao, S.; Riley, M.; Chen, L.; Goyal, A.; Lee, S.; Bhat, I.; Lu, T.-M.; Wang, G.-C.

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {111} CdTe //{001} Ni with [11 ¯ 0] CdTe //[010] Ni and [112 ¯ ] CdTe //[100] Ni . The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11 ¯ 0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30° oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  8. Structural and optical characterization of CdTe quantum dots thin films

    International Nuclear Information System (INIS)

    El-Nahass, M.M.; Youssef, G.M.; Noby, Sohaila Z.

    2014-01-01

    Highlights: • CdTe QDs are prepared by hot injection method. • Thermally evaporated CdTeQDs thin films were prepared. • Structural characterization and analysis were done. • Optical parameters were studied. - Abstract: Cadmium telluride quantum dots (CdTe QDs) have been synthesized using hot-injection chemical technique. The CdTe QDs thin films were deposited onto optical flat fused quartz substrates using thermal evaporation technique. The CdTe QDs powder and the as deposited films were characterized using X-ray diffraction and high resolution transmission electron microscope (HRTEM). The X-ray analysis shows that both CdTe QDs powder and the as deposited films crystallize in cubic zinc-blende type structure with lattice parameter 6.46 Å and 6.45 Å, respectively. The X-ray calculation shows that the average crystallite size of the as deposited CdTe QDs films varied from 1.1 nm for the powder to 2.3 nm for the thin film. The HRTEM examination of the as deposited films shows that the average particle size vary from 2.5 nm for the powder to 2.7 nm for the thin film. For the as deposited films, the dependence of (αhν) 2 on the incident photon energy indicates that the optical transitions within the film are allowed direct with energies observed at E g1 ≅2eV and E g2 ≅2.3eV which attributed to quantum confinement effect. The optical band gap increases from 1.5 eV for microstructure CdTe to 2 eV for nanostructure quantum dots which corresponding to wavelength(620 nm) so it is a great benefit to use CdTe quantum dots as solar harvesting devices application in solar spectrum region (400–800 nm). Urbach energy is calculated and found to be 360 meV which is higher than microstructure CdTe. The refractive index and refractive index dispersion of the as deposited CdTe QDs film has been calculated from transmission and reflection spectra. It has been found that the refractive index is reduced from (2.66) for microstructure CdTe to be (1.7) for CdTe quantum

  9. Nanoparticle precursor route to low-temperature spray deposition of CdTe thin films

    International Nuclear Information System (INIS)

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Jones, K.M.; Ginley, D.S.

    1995-01-01

    In this letter we report a nanoparticle-derived route to CdTe thin films. CdTe nanoparticles 39±8 A in diameter, prepared by an organometallic route, were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. CdTe thin-film deposition was realized by spraying a nanoparticle/butanol colloid onto SnO 2 -coated glass substrates at variable susceptor temperatures. The resultant CdTe films were characterized by atomic force microscopy, x-ray diffraction, and UV-Vis spectroscopy. Smooth and dense CdTe thin films were obtained using growth temperatures ∼200 degree C less than conventional spray pyrolysis. A growth temperature dependence upon CdTe grain size formation and crystallinity was observed by atomic force microscopy and x-ray diffraction. UV-Vis characterization revealed a transformation in the optical properties of the CdTe thin films as a function of growth temperature. copyright 1995 American Institute of Physics

  10. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  11. Depth profile characterization of electrodeposited multi-thin-film structures by low angle of incidence X-ray diffractometry

    International Nuclear Information System (INIS)

    Nauer, M.; Ernst, K.; Kautek, W.; Neumann-Spallart, M.

    2005-01-01

    Typical structures of heterojunction photovoltaic cells were prepared by sequential electrodeposition of II-VI semiconductor thin films on a transparent conductor, SnO 2 on glass. The structures comprised a wide bandgap window, ZnSe or ZnTe, a medium bandgap light absorber, CdTe, and an ohmic back contact. It is demonstrated that low incidence angle X-ray diffraction (LIXD) can be successfully used as a process monitoring tool, featuring non-destructive depth profiling and phase characterization of such thin film structures. LIXD results are compared to Secondary Ion Mass Spectroscopy (SIMS) and Scanning Electron Microscopy (SEM) data. Both, SIMS and SEM, corroborate the LIXD results as to layer sequence and presence/absence of intermixing

  12. A Super Nonlinear Electrodeposition-diffusion-controlled Thin Film Selector.

    Science.gov (United States)

    Ji, Xinglong; Song, Li; He, Wei; Huang, Kejie; Yan, Zhiyuan; Zhong, Shuai; Zhang, Yishu; Zhao, Rong

    2018-02-28

    Selector element with high nonlinearity is an indispensable part in constructing high density, large-scale, 3-D stackable emerging non-volatile memory (NVM) and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge2Sb2Te5) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (< 5 mV/dev), ultra-low leakage (< 10 fA), and bidirectional operation. With solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector design by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

  13. Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films

    Science.gov (United States)

    Chin, Ken K.; Cheng, Zimeng; Delahoy, Alan E.

    2015-05-01

    While it is being debated whether Cd vacancy is an effective p-dopant in CdTe, and whether CdTe thin film in solar energy application should be Cd-deficient or Cd-rich, in the theory of CdTe physical vapor deposition (PVD) it has been assumed that both the source material and the thin film product is stoichiometric. To remediate the lack of effective theory, a new PVD model for CdTe photovoltaic (PV) modules is presented in this work, in which the composition of the CdTe thin film under growth is a parameter determined by the source CdTe composition as well as the growth condition. The solid phase Cd1-δTe1+δ compound under deposition temperature is treated as a solid solution with a mole of excess pure Te or Cd as solute and one mole of congruently grown CdTe as solvent. Assuming that the vapor pressure of Te2 can be calculated by using the law of solid solution PTe=H0+aH1+a2H2 round the congruent composition, where the molar number a and the constants H0, H1 and H2 as functions of temperature T are extracted from the experimental data. Thus, the mole fraction of solute in the grown CdTe thin film as well as the growth rate, as a function of the solute mole fraction in the source CdTe can be determined.

  14. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  15. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

    2008-01-01

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  16. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-07-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  17. Electrodeposition of hybrid ZnO/organic dye films

    Energy Technology Data Exchange (ETDEWEB)

    Moya, Monica; Mari, Bernabe; Mollar, Miquel [Department de Fisica Aplicada-IDF, Universitat Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain)

    2011-06-15

    The viability of the electrodeposition as a suitable technique for preparing new porous hybrid materials has been tested in this paper. Hybrid ZnO films with two different organic dyes: Eosin-Y and Tetrasulphonated-Cu-phtalocyanine were prepared. Their physical and chemical properties as well as their dependence on the growth conditions were investigated. It is found that the type of dye has a big influence on the morphology and porosity of hybrid films. Open and connected pores are created in hybrid ZnO/Eosin-Y films while both open and closed pores coexist in hybrid ZnO/Tetrasulfonated-Cu-phthalocyanine. As one of the promising applications of hybrid materials is photovoltaic conversion of sunlight, photoelectrochemical characterization of hybrid films is also reported. Photocurrent generation owing to both contributions ZnO and Eosin-Y is observed in ZnO/Eosin-Y films but no photocurrent has been observed in ZnO/Tetrasulfonated-Cu-phthalocyanine films. SEM micrographs of hybrid ZnO films grown in aqueous bath; (Left) ZnO/Eosin-Y films grown at 70 C, -0.9 V (Right) ZnO/Ts-CuPc films grown at 70 C, -0.9 V. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Degradation processes occur on the CdTe thin films solar elements

    CERN Document Server

    Mirsagatov, S A; Makhmudov, M; Muzapharova, S A

    1999-01-01

    It is shown the Cu in CdTe polycristalline films is diffusing on the complex mechanism. By bringing of W atoms in thin CdTe layers it is possible to operate diffusion's speed of Cu atoms. Initiation of the (Cu sup + W sub C sub d sup -) complexes under the conditions N(W sub C sub d sup -)>=N(Cu sub i sup +) hardly reduce the diffusion velocity of Cu atoms.

  19. Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, S.K. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India)]. E-mail: 628@ssplnet.org; Tiwari, Umesh [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Raman, R. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Prakash, Chandra [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Krishna, Vamsi [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Dutta, Viresh [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Zimik, K. [Laser Science and Technology Centre, Metcalfe House, Delhi 110 054 (India)

    2005-02-01

    The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, {lambda}=248 nm, 10 Hz) on corning 7059 glass and SnO{sub 2}-coated glass (SnO{sub 2}/glass) substrates at different substrate temperatures (T{sub s}) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to {approx}3-{mu}m-thick films were obtained up to 200 deg. C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 deg. C. Atomic force microscopy (AFM) shows an average grain size {approx}0.3 {mu}m. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and {approx}1.6 eV for cubic phase.

  20. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  1. Determination of dispersion parameters of thermally deposited CdTe thin film

    Energy Technology Data Exchange (ETDEWEB)

    Dhimmar, J. M., E-mail: bharatpmodi@gmail.com; Desai, H. N.; Modi, B. P. [Department of Physics, Veer Narmad South Gujarat University, Surat, Gujarat (India)

    2016-05-23

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10{sup −6} torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  2. Determination of dispersion parameters of thermally deposited CdTe thin film

    International Nuclear Information System (INIS)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-01-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10 −6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  3. Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

    International Nuclear Information System (INIS)

    Dzhafarov, T D; Caliskan, M

    2007-01-01

    Diffusion of Au and its effects on structural, electrical and optical properties of CdTe films fabricated by the close-spaced sublimation technique have been investigated. Diffusion of Au was studied in the range 400-550 deg. C using energy dispersive x-ray fluorescence analysis. Au-doped and un-doped CdTe films were characterized by x-ray diffraction (XRD), electrical and optical absorption measurements. The temperature dependence of the diffusion coefficient of Au in CdTe films is described as D = 4.4 x 10 -7 exp(-0.54 eV/kT). The mechanism of Au diffusion in polycrystalline CdTe films is attributed to the fast migration of Au along grain boundaries with simultaneous penetration into grains and settling on Cd-vacancies. It is supposed that the weak influence of Au diffusion on XRD patterns of CdTe films can be explained by dispersal of Au atoms preferentially on Cd-vacancies owing to proximity of the covalent radius of Au and Cd. Au atoms, placed on Cd-vacancies (Au Cd ) during fast cooling from diffusion temperature to room temperature, show an acceptor behaviour with an energy level about of E v + 0.2 eV. The nature of this level is discussed

  4. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Therefore, it clearly supports the non-existence of physical barrier at CdTe ... presence of potential surface barrier at the electrode–film interface. ... Pradip Kumar Kalita clearly indicates the increase in density of grain boundary states as reported in earlier communication [12]. In these smaller grained films, therefore, the ...

  5. The Characterisation of Electrodeposited NiCoFe Alloy Films

    International Nuclear Information System (INIS)

    Demirbas, O.

    2008-01-01

    A series of NiCoFe alloy films were deposited on polycrystalline Titanium substrate using electrodeposition technique to study their structural and magnetic properties. The electrolyte contained 0.5 M NiSO 4 , 0.1M CoSO 4 , 0.01M FeSO 4 and 0.3M H 3 BO 3 . The films were grown at different deposition potential . The electrolyte pH was 3.2. X-ray diffraction results showed that NiCoFe alloy films displayed face centred cubic structure. Magnetoresistance (MR) measurements of the films were carried out using Van der Pauw (VDP) method at room temperature and magnetic field was applied up to ±10 kOe. The MR measurements indicated that all films exhibited anisotropic magnetoresistance. The vibrating sample magnetometer (VSM) was used to study the magnetic properties. The VSM measurements showed that the magnetic properties are sensitive to the deposition potential and the easy axis is in the film plane

  6. Production and characterization of CdTe films for CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Pal, A.K.; Chaudhuri, S.

    1988-01-01

    Cadmium telluride is considered as one of the most promising materials in the field of semiconductor devices due to its near ideal band gap for most efficient conversion of solar energy. It can also be prepared in both n and p type forms so that solar cell with homojunction or heterojunction configurations can be obtained. Earlier CdTe was mostly used in single crystal form for device fabrication. But the devices produced were not cost effective. The obvious answer to this problem is to opt for thin film technology for preparing device grade CdTe films. The fundamental problem of producing device grade CdTe films is associated with inherent high resistivity and a low carrier life time. The authors report, in this paper, studies on the CdTe films produced by hot wall vacuum evaporation. The films were deposited onto glass, molybdenum and single crystal NaCl substrates under various experimental conditions. The optimum values of the deposition parameters were uniquely determined to obtain best quality film for the fabrication of the solar cell. The stoichiometry of the film was tested

  7. Preparation and characterization of properties of electrodeposited copper oxide films

    Science.gov (United States)

    Wang, Longcheng

    Copper oxides, including cuprous oxide and cupric oxide, are prepared by electrochemical deposition. The structural, optical and electrical properties of as-deposited copper oxides are evaluated, based on which cuprous oxide is selected as a promising material for photovoltaic applications. Electrodeposited cuprous oxide is a p-type semiconductor with a direct band gap of 2.06 eV. The mechanism of how pH affects the structural and electrical properties of electrodeposited cuprous oxide films is studied. In the pH range of 7.5 to 12.0, there are three different preferred crystal orientations: (100), (110) and (111). With different orientations, cuprous oxide shows different surface morphology and grain size. Bath pH effect on structural properties is explained by its effect on the growth rate of different crystallographic planes with different Cu+/O2- ratios. Capacitance-voltage measurements are performed to study electrical properties of differently oriented cuprous oxide films. The results show that the flat band potential shifts negatively as the bath pH increases. Electrodeposited cupric oxide is a p-type cupric oxide with an indirect band gap of 1.32 eV. Different cleaning methods are used to clean the substrate surface for electrodeposition of cupric oxide. Electrochemical etching is proven to be an effective method for Cu substrate cleaning in cupric oxide deposition. In particular, in-situ electrochemical etching is developed, which prevents the cleaned substrate from exposure to air. Current-voltage characterization shows that cupric oxide deposited on electrochemically etched Cu substrates has favorable electrical properties and better rectification behavior. Cuprous oxide is selected for the fabrication of p-n homo-junction because it has better crystallinity, bigger grains, better control over crystal quality and a direct band gap. Based on the model that bath pH can control the stoichiometry and native point defects in electrodeposited cuprous oxide

  8. Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Burst, James; Guthrey, Harvey L.; Metzger, Wyatt K.

    2016-11-21

    We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.

  9. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2018-03-01

    Full Text Available The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111 while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells. Keywords: CdTe thin film, Microstructural, Optoelectrical, Thermal evaporation

  10. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  11. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Shamara [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Vatavu, Sergiu, E-mail: svatavu@usm.md [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Evani, Vamsi; Khan, Md; Bakhshi, Sara; Palekis, Vasilios [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Rotaru, Corneliu [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Ferekides, Chris [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States)

    2015-05-01

    A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects. - Highlights: • Photoluminescense (PL) of CdTe thin films is present in the 0.8-1.6 eV spectral region. • High intensity excitonic peaks are among the main radiative paths. • Radiative transitions at 1.36x eV are assisted by dislocations caused levels. • Extremal Cd/Te overpressure ratios enhance PL for 1.497 eV, 1.486 eV, 1.474 eV bands. • PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.

  12. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    Science.gov (United States)

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, Vasant; Ganesan, V.

    2014-12-01

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, and oscillator energy (Eo) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 104 Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  13. Preparation and performance of thin film CdTe mini-module

    Energy Technology Data Exchange (ETDEWEB)

    Jingquan, Zhang; Lianghuan, Feng; Zhi, Lei; Yaping, Cai; Wei, Li; Lili, Wu; Bing, Li; Wei, Cai; Jiagui, Zheng [College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610064 (China)

    2009-06-15

    The film deposition process and integrated technology of the CdTe mini-module with high efficiency are key steps to manufacture large-area modules. In this paper, CdS, CdTe and ZnTe:Cu films with a substrate area of 7 x 10 cm{sup 2} were deposited by chemical bath deposition, close-spaced sublimation and vacuum co-evaporation, respectively. The uniform films were prepared after their thicknesses, structures and electronic characteristics were studied as the function of deposition parameters. The films of SnO{sub 2}:F, CdTe, etc, were scribed by Kr-lamp-pumped Q-switch YAG:Nd laser. The pumped lamp current, Q-switch frequency and scribing rate were optimized. The scribing efficiency of the base frequency light was compared with that of doubled frequency light. The integrated structure design was optimized after simulating. Then the CdTe mini-module of 7.03% efficiency was gained with a total area of 54 cm{sup 2} and nine integrated elementary cells. (author)

  14. Investigation of deep level defects in CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  15. Three-dimensional defects in CdTe films obtained by pulsed laser deposition

    NARCIS (Netherlands)

    Sagan, P; Virt, IS; Zawislak, J; Rudyj, IO; Kuzma, M

    2004-01-01

    The quality of Cd chalcodenides epitaxial films can be enhanced seriously by applying a pulsed (electron beam or laser beam) method for ablation of targets. The structure of laser deposited CdTe layers was investigated by transmission high energy electron diffraction. This method is very useful for

  16. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Keeping the above aspects in mind, an experimental study on pho- toconductivity processes in pure CdTe thin films ... form of a Faraday caze to keep undesirable noise at minimum. 3. Results and discussion ..... represented in table 1 which show a decreasing trend with increasing ambient temperature. Howeverγ < 1 at any ...

  17. Growth techniques used to develop CDS/CDTE thin film solar cells ...

    African Journals Online (AJOL)

    Growth techniques used to develop CDS/CDTE thin film solar cells: a review. ... Techniques such as molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) called melt growth or Bridgman are well known as high quality semiconductor growth techniques. One of the limitations of these ...

  18. Potentiostatic electrodeposition of Co-Ni-Fe thin films from sulfate medium

    International Nuclear Information System (INIS)

    Hanafi, Ismail; Daud, Abdul Razak; Radiman, Shahidan

    2016-01-01

    The aim of this study was to produce thin films of ternary cobalt-nickel-iron (Co-Ni-Fe) alloy by electrochemical deposition method at different electrodeposition potentials in a sulfate solution (0.15 M CoSO 4 , + 0.2 M NiSO 4 + 0.00 5M FeSO 4 ). The Co-Ni-Fe alloy thin films were electrodeposited on indium-doped tin oxide (ITO) coated on a conducting glass substrate. Voltammetric studies indicated that potential range for successful deposition of Co, Ni and Fe was between -1.10 to -1.30 V (SCE). The energy dispersive X-ray (EDX) analysis indicated that the films exhibited anomalous behavior with Ni content of the films significantly increased, whereas the Co and Fe content decreased as the electrodeposition potentials were made more negative. The field emission scanning electron microscopy (FESEM) study showed that the electrodeposited films were uniform for all applied potential values and larger particles were formed when higher electrodeposition potentials were applied. Investigation by X-ray diffraction (XRD) revealed that the dominant phase in the deposited film was amorphous Co-Ni-Fe. Hysteresis curves of the ternary alloy film obtained from vibrating sample magnetometer prove that the alloy is ferromagnetic. The coercivity mechanism of the Co-Ni-Fe films obeyed Neel’s relation which is thickness dependent. Keywords: applied potential, Co-Ni-Fe thin films, ferromagnetic, Neel’s relation.

  19. Electrodeposition of nickel-iridium alloy films from aqueous solutions

    Science.gov (United States)

    Wu, Wangping; Jiang, Jinjin; Jiang, Peng; Wang, Zhizhi; Yuan, Ningyi; Ding, Jianning

    2018-03-01

    Nickel-iridium (Ni-Ir) alloy films were electrodeposited from aqueous solutions on copper substrates under galvanostatic conditions. The effects of bath composition and deposition time on the faradaic efficiency (FE), partial current densities, chemical composition, morphology and crystallographic structure of the films were studied. The results show that the Ni-Ir alloys with Ir content as high as 37 at% and FE as high as 44% were obtained. Increase in concentration of citric acid had little or no effect on the composition of the alloys, but resulted in a significant decrease in FE and partial current densities of Ni and Ir. The FE and the partial current density of Ni slightly decreased with increasing Ir3+ concentration, however, Ir content increased while partial current density of Ir remained stable. The increase of Ni2+ concentration could result in the increase of the FE and the rate of Ni-Ir deposition, and even no cracks formed on the surface. The surface average roughness and root mean square roughness of the film were 6.8 ± 0.3 nm and 5.4 ± 0.3 nm, respectively. The mixture phases contained significant amounts of Ni oxides and a small amount of metallic Ni, Ir and Ir oxides on the surface. After argon ion sputter cleaning, the film was mainly composed of metallic Ni and Ir. The film consisted of the amorphous and nanocrystalline phases. The Ni content in the deposits was higher than that in the electrolyte, the co-deposition of Ni-Ir alloy was a normal deposition.

  20. Electrodeposited cadmium selenide films for solar cells; Electrodeposition de couches minces de CdSe: Application a la conversion photovoltaique

    Energy Technology Data Exchange (ETDEWEB)

    Bnamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Faculte des Sciences; Fahoume, M. [Universite Ibn Tofail, Faculte des Sciences, Kenitra (Morocco)

    1998-01-01

    Solar cells based on II-IV semiconductors are among the leading candidates for low-cost photovoltaic conversion of solar energy due to their high absorption coefficients and therefore the low materials consumption for their production. The synthesis of polycrystalline Cd Se thin films by cathodic electrodeposition on conducting substrates is described in this paper. Electrodeposition involves potentiostatic reduction from an acid aqueous bath. The influence of bath temperature and deposition potential on the crystallinity is discussed. For optimized deposition parameters, the XRD patterns reveal cubic and hexagonal Cd Se. Electron probe microanalysis shows an excess of Se in the samples. Photoelectrochemical studies of the films in aqueous polysulfide allowed us to determine the photovoltaic properties e.g.: semiconducting type, short-circuit current, open circuit voltage and fill factor. (authors) 5 refs.

  1. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  2. X-ray photoelectron spectroscopy studies of the surface composition of highly luminescent CdTe nanoparticles in multilayer films

    International Nuclear Information System (INIS)

    Zhang Hao; Yang Bai

    2002-01-01

    3-Mercaptopropionic acid-stabilized CdTe nanoparticles were prepared and assembled layer-by-layer with poly(diallyldimethylammonium chloride) (PDAC) to form a polymer-supported ultrathin film by virtue of the Coulombic interaction between negatively charged CdTe and positively charged PDAC. The composition of the CdTe nanoparticle multilayer films was analyzed by X-ray photoelectron spectroscopy (XPS) combined with optical absorbance and luminescence measurements. It was experimentally observed that Cd-thiol complexes on the surface of the CdTe nanoparticles provide the crucial chemical passivation responsible for the high photoluminescence (PL) efficiency of the CdTe particles. The high PL efficiency and high stability of CdTe particles corresponded to the particles with the high surface coverage with Cd-thiol complexes. Moreover, XPS data indicated the surface coverage with Cd-thiol complexes could be increased around the CdTe particle by either reflux or adjusting the pH of resulted CdTe colloidal suspension, which was consistent with the results from optical absorbance and luminescence spectra. It appeared that the popular method of constructing multilayer films could be used as a tool to characterize the surface composition of nanometer-sized particles

  3. Electrochromic properties of electrodeposited tungsten oxide (WO3) thin film

    Science.gov (United States)

    Dalavi, D. S.; Kalagi, S. S.; Mali, S. S.; More, A. J.; Patil, R. S.; Patil, P. S.

    2012-06-01

    In this work, we report on a potentiostatic electrochemical procedure employing an ethanolic solution of peroxotungstic acid yielded tungsten oxide (WO3) films specifically for transmissive electrochromic devices (ECDs) such as "smart windows". WO3 film was confirmed from the binding energy determination by X-ray photoelectron spectroscopic studies. The diffusion coefficient during intercalation and deintercalation was found to be 2.59×10-10 and 2.40×10-10 cm2/C. Electrodeposited WO3 produce high color/bleach transmittance difference up to 74% at 630 nm. On reduction of WO3, the CIELAB 1931 2% color space coordinates show the transition from colorless to the deep blue state (L=95.18, a=2.12, b=0.3138, and L=57.78, a=-21.79, b=0.244) with steady decrease in relative luminance. The highest coloration efficiency (CE) of 92 cm2/C and good response time of 10.28 for coloration (reduction) and 3.2 s for bleaching (oxidation) was observed with an excellent reversibility of 89%.

  4. Polycrystalline Thin-Film Cadmium Telluride Solar Cells Fabricated by Electrodeposition; Final Technical Report, 20 March 1995-15 June 1998

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J. U.; Mao, D.; Kaydanov, V.; Ohno, T. R.; Williamson, D. L.; Collins, R.; Furtak, T. E.

    1999-01-27

    This report summarizes work performed by the Colorado School of Mines Department of Physics under this subcontract. Based on the studies conducted, researchers increased the efficiency of the cells with electrodeposited CdTe and CBD CdS by 3% on average ({approx}30 relative %). The improvement came from 1. Optimization of CdS initial thickness taking into account CdS consumption of CdTe during the CdTe/CdS post-deposition treatment; optimization of CdS post-deposition treatment with CdCl2 aimed at prevention of Te diffusion into CdS and improvement of the CdS film morphology and electronic properties. That led to a considerable increase in short circuit current, by 13% on average. 2. Optimization of CdTe thickness and post-deposition treatment which led to a significant increase in Voc, by {approx}70 mV. The highest Voc obtained exceeded 800 mV. 3. Development of a ZnTe:Cu/Metal back contact processing procedure that included selection of optimal Cu content, deposition regime and post-deposition treatment conditions. As a result, back contact resistance as low as 0.1W-cm2 was obtained. The cell stability was measured on exposure to accelerated stress conditions. Preliminary studies of some new approaches to improvement of CdS/CdTe structure were conducted.

  5. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  6. Decomposition of ethylene carbonate on electrodeposited metal thin film anode

    Energy Technology Data Exchange (ETDEWEB)

    Bridel, Jean-Sebastien; Grugeon, Sylvie; Laruelle, Stephane; Tarascon, Jean-Marie [Laboratoire de Reactivite et Chimie des Solides, Universite de Picardie Jules Verne CNRS (UMR-6007), Faculte des Sciences, 33 rue Saint-Leu 80039, Amiens Cedex (France); Hassoun, Jusef; Reale, Priscilla; Scrosati, Bruno [Chemistry Department, University of Rome ' ' La Sapienza' ' , 00185 Roma (Italy)

    2010-04-02

    Metals capable of forming alloys with Li are of great interest as an alternative to present carbon electrodes, hence the importance of knowing their interactions with electrolytes is necessary. Herein we report further on the high-voltage extra irreversibility of Sn electrodeposited thin films vs. Li in EC-DMC 1 M LiPF{sub 6} electrolytes. We show that this high-voltage irreversibility is strongly dependent upon the electrolyte composition as demonstrated by its disappearance in EC-free electrolytes. This finding coupled with IR spectroscopy measurements provides direct evidence for the tin-driven catalytic degradation of EC during the discharge of Sn/Li cells. From an electrochemical survey of various metals, capable of alloying with Li, we found that Bi and Pb behaved like Sn while Si and Sb did not act as catalysts towards EC degradation. A rationale for such behaviour is proposed, a procedure to bypass EC degradation with the addition of VC is presented, and an explanation for the non-observance of catalytic-driven EC degradation for Sn/C composites is provided. (author)

  7. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  8. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gaire, C. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Rao, S. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Riley, M. [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Chen, L. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Goyal, A. [Oak Ridge National Lab, Oak ridge, TN, 37831-6116 (United States); Lee, S. [US Army ARDEC Benet Labs, Watervliet, NY, 12189-4050 (United States); Bhat, I. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Lu, T.-M. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Wang, G.-C., E-mail: wangg@rpi.edu [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States)

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {l_brace}111{r_brace}{sub CdTe}//{l_brace}001{r_brace}{sub Ni} with [11{sup Macron }0]{sub CdTe}//[010]{sub Ni} and [112{sup Macron }] {sub CdTe}//[100]{sub Ni}. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11{sup Macron }0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30 Degree-Sign oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  9. Amorphous iron phase formation in swift heavy ion irradiated electrodeposited iron thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmann, E. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary)]. E-mail: kuzmann@ludens.elte.hu; Stichleutner, S. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Havancsak, K. [Department of Solid State Physics, Eoetvoes University, Budapest (Hungary); El-Sharif, M.R. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Chisholm, C.U. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Doyle, O. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Skuratov, V. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Kellner, K. [Johannes Kepler University Linz (Austria); Dora, Gy. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Homonnay, Z. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Vertes, A. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary)

    2006-07-15

    {sup 57}Fe conversion electron Moessbauer spectroscopy, SEM, EDAX, XRD and AFM measurements were used to study the radiation effect of 246 MeV Kr ions on electrochemically deposited {sup 57}Fe thin films. Amorphous iron phase formation has been shown to occur for the first time in electrodeposited iron thin films due to the irradiation with swift heavy ions.

  10. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2018-03-01

    The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

  11. Magnetic vortex state and multi-domain pattern in electrodeposited hemispherical nanogranular nickel films

    International Nuclear Information System (INIS)

    Samardak, Alexander; Sukovatitsina, Ekaterina; Ognev, Alexey; Stebliy, Maksim; Davydenko, Alexander; Chebotkevich, Ludmila; Keun Kim, Young; Nasirpouri, Forough; Janjan, Seyed-Mehdi; Nasirpouri, Farzad

    2014-01-01

    Magnetic states of nickel nanogranular films were studied in two distinct structures of individual and agglomerated granules electrodeposited on n-type Si(1 1 1) surface from a modified Watts bath at a low pH of 2. Magnetic force microscopy and micromagnetic simulations revealed three-dimensional out-of-plane magnetic vortex states in stand-alone hemispherical granules and their arrays, and multi-domain patterns in large agglomerates and integrated films. Once the granules coalesce into small chains or clusters, the coercivity values increased due to the reduction of inter-granular spacing and strengthening of the magnetostatic interaction. Further growth leads to the formation of a continuous granulated film which strongly affected the coercivity and remanence. This was characterized by the domain wall nucleation and propagation leading to a stripe domain pattern. Magnetoresistance measurements as a function of external magnetic field are indicative of anisotropic magnetoresistance (AMR) for the continuous films electrodeposited on Si substrate. - Highlights: • Magnetic states of electrodeposited nickel in isolated spherical and agglomerated nanogranules, and a continuous film. • Preferential magnetization reversal mechanism in isolated granules is vortex state. • Micromagnetic simulations confirm the three-dimensional vortex. • Transition between the vortex state and multi-domain magnetic pattern causes a significant decrease in the coercive force. • Continuous nickel films electrodeposited on silicon substrate exhibit AMR whose magnitude increases with the film thickness

  12. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    Science.gov (United States)

    Munshi, Amit Harenkumar

    CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

  13. Cobalt-rich alloys electrodeposited on silicon; Filmes de ligas ricas em cobalto eletrodepositado sobre silicio

    Energy Technology Data Exchange (ETDEWEB)

    Spada, E.R.; Dotto, M.E.R.; Sartorelli, M.L. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil). Departamento de Fisica. Lab. de Sistemas Nanoestruturados; Paula, F.R. de, E-mail: depaula@dfq.feis.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Ilha Solteira, SP (Brazil). Departamento de Fisica e Quimica

    2014-07-01

    We report the electrodeposition (ED) of cobalt-rich alloy films on n-type Si (100) substrates in aqueous solution. A small amount of copper sulphate in the bath improved the quality of cobalt-rich films. The bath proved to be appropriate for the production of electrodeposited magnetic antidote structures prepared by nanosphere lithography technique. X-ray measurements indicate a mixture of hcp and fcc CoCu structures and strong texture in the (001) hcp and (111) fcc direction. Magnetic behavior was shown to be dependent on the thickness, which directly affects the domain wall pinning and the presence of superparamagnetism. (author)

  14. Effect of electric field on spray deposited CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vamsi Krishna, K.; Dutta, V.; Paulson, P.D

    2003-11-01

    CdTe thin films have been deposited using spray pyrolysis with and without electric field. The improvement in the film properties with the electric field is observed which is mainly due to the reduction of droplet size. The presence of CdTeO{sub 3} peaks in the X-ray diffraction pattern for films deposited without electric field at 350 deg. C is attributed to the slow dissociation of complexes containing Cd and Te ions on the substrate. The reduction in the droplet size under the influence of electric field and faster dissociation of droplets at high temperature leads to complete pyrolytic reaction for a nearly oxide free CdTe film formation. Energy dispersive X-ray analysis indicates stoichiometric Cd and Te atomic concentrations, with oxygen and chlorine impurities in varying amount for different substrate temperatures, with and without electric field. The presence of chlorine gives rise to an intense photoluminescence peak at 1.40 eV along with a weak peak at 0.84 eV. The intensities of both peaks diminish when the films are prepared with the electric field, due to reduction of chlorine concentration and morphological changes in the films.

  15. Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.; Galiano, F.

    1990-01-01

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

  16. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    OpenAIRE

    Powalla, Michael; Bonnet, Dieter

    2007-01-01

    Thin-film photovoltaic modules based on Cu-In-Ga-Se-S (CIS) and CdTe are already being produced with high-quality and solar conversion efficiencies of around 10%, with values up to 14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules...

  17. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Spatially Resolved Cathodoluminescence of CdTe Thin Films and Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M. J.; Metzger, W.; Gessert, T. A.; Albin, D. S.; Al-Jassim, M. M.

    2003-05-01

    We have investigated the spatial distribution of different transitions identified in the emission spectra of CdTe thin films and solar cells by cathodoluminescence spectroscopic imaging (CLSI). Prior to back-contact deposition, the spectra are dominated by excitons (X) and donor-to-acceptor (DAP) transitions. After contacting, Cu acceptor states are found in addition to the X and DAP recombination processes. A very systematic behavior found in CdTe is that DAP transitions occur preferentially at grain boundaries (GBs). The distribution of these states responsible for the passivation of GBs is not affected by further processing, although additional levels participate in the recombination process. We believe that this stability is one of the reasons for the success of thin-film CdTe solar cells. Estimates of the densities of different donors and acceptors participating in the recombination process are possible from the analysis of the evolution of the emission spectra with the excitation level. It is found that the back contact suppresses some intrinsic acceptors (associated with the A center) near the back-contact interface and, therefore, Cu acceptor states should be responsible for the p-typeness of the back surface more than a reduction of compensation. CLSI measurements are shown to be helpful in understanding the physics of back-contact formation.

  19. Surfactant assisted electrodeposition of MnO{sub 2} thin films: Improved supercapacitive properties

    Energy Technology Data Exchange (ETDEWEB)

    Dubal, D.P. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Kim, W.B. [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)

    2011-10-13

    Highlights: > Effect of Triton X-100 on physico-chemical properties of MnO{sub 2} films. > High supercapacitance of 345 F g{sup -1}. > Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO{sub 2} thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO{sub 2} films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO{sub 2} in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO{sub 2} film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO{sub 2} thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO{sub 2} films deposited in presence of Triton X-100 is 345 F g{sup -1}.

  20. Surfactant assisted electrodeposition of MnO2 thin films: Improved supercapacitive properties

    International Nuclear Information System (INIS)

    Dubal, D.P.; Kim, W.B.; Lokhande, C.D.

    2011-01-01

    Highlights: → Effect of Triton X-100 on physico-chemical properties of MnO 2 films. → High supercapacitance of 345 F g -1 . → Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO 2 thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO 2 films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO 2 in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO 2 film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO 2 thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO 2 films deposited in presence of Triton X-100 is 345 F g -1 .

  1. Electrodeposition of Sm–Co film with high Sm content from aqueous solution

    International Nuclear Information System (INIS)

    Long, Xiong-fei; Guo, Guang-hua; Li, Xin-hua; Xia, Qing-lin; Zhang, Jin-fang

    2013-01-01

    Sm–Co films with high Sm content were electrodeposited by potentiostat technique from the aqueous solution containing glycine as a complexing agent. The Cyclic Voltammetry measurements showed that the glycine plays a crucial role in the electrodeposition of Sm–Co films. The forming of stable complex [Co II Sm III (Gly − ) 2 (HGly ± )] 3+ facilitated the codeposition of Sm with Co at relatively low potential, which made it possible to fabricate the Sm–Co films with high Sm content. The Sm–Co film with 43 at.% Sm had been obtained. X-ray diffraction showed that the as-deposited Sm–Co films were amorphous. After annealing at 600 °C for 2 h in Ar atmosphere, the films became crystalline and the permanent Sm 2 Co 17 phase was formed, which significantly enhanced the coercivity of the films. - Highlights: • The Sm–Co film with high Sm content is electrodeposited from aqueous solutions. • The addition of glycine facilitates the codeposition of Sm with Co at relatively low potential. • The Sm 2 Co 17 phase is formed in the annealed Sm–Co film

  2. Pulse electron beam-induced synthesis of CdTe printed films

    International Nuclear Information System (INIS)

    Houng, M.P.; Fu, S.L.; Wu, T.S.; Leu, J.T.; Cheng, K.Y.

    1987-01-01

    In an attempt to produce a high quality single crystal CdTe film with enhanced electrical properties, screen printed Cd + Te films were prepared on an aluminium oxide substrate and then irradiated with a pulsed electron beam over the energy range 12-15 KeV. Some samples were also vacuum annealed from 410-620 0 C after irradiation. The films were characterized by x-ray diffraction, scanning electron microscopy and photoluminescence. This showed that film quality and uniformity were limited by electron beam heating, although improvements can be made by vacuum annealing. Furthermore, only polycrystalline films were produced, possibly due to a too short pulse duration and the use of a polycrystalline substrate. (U.K.)

  3. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  4. Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Jesús Rangel-Cárdenas

    2017-06-01

    Full Text Available In this work, the reflectance, optical absorption, and band gap have been determined for CdTe thin films grown on planar and microstructured substrates. The treated surface was prepared by laser ablation of a silicon wafer, forming holes in a periodic arrangement. Thin films were grown by pulsed laser ablation on silicon samples kept at 200 °C inside a vacuum chamber. The presence of CdTe was verified with X-ray diffraction and Raman spectroscopy indicating a nanocrystalline zinc blended structure. The optical absorption of thin films was calculated by using the Fresnel laws and the experimental reflectance spectrum. Results show that reflectance of 245 nm films deposited on modified substrates is reduced by up to a factor of two than the obtained on unchanged silicon and the optical absorption is 16% higher at ~456 nm. Additionally, it was determined that the band gap energy for planar and microstructured films is about 1.44 eV for both cases.

  5. Characterization of Cu-doped CdTe thin films prepared by closed space sublimation (css) techniques

    International Nuclear Information System (INIS)

    Abbas, N.; Shah, N.; Ali, A.; Maqsood, A.

    2005-01-01

    Cadmium telluride (CdTe) thin films of different thickness are deposited on the microscopic slides of water-white glass substrates using the close spaced sublimation (CSS) method. The films are doped with Cu by immersion in Cu (NO/sub 3/)2-H/sub 2/O solution for different times and the effect of immersion time and subsequent heating in vacuum on the electrical, structural and optical properties are presented. The XRD and SEM results show that appropriate Cu doping would be favorable to the growth of CdTe crystallite. The Hall Effect measurements indicate that the conductivity of the films could be improved by Cu doping. (author)

  6. Preparation and magnetic properties of electrodeposited [Co/Zn] multilayer films

    International Nuclear Information System (INIS)

    Pascariu, P.; Tanase, S.I.; Tanase, D. Pinzaru; Sandu, A.V.; Georgescu, V.

    2012-01-01

    Highlights: ► The [Co/Zn] 50 have been deposited SSSSSfrom sulfate baths by a dual bath procedure in potentiostatic regime. ► The microstructure and magnetic properties have a strong dependence both on the nature of the first electrodeposited layer onto Cu substrate. ► We report here the observation of significant values of GMR in [Co/Zn] 50 multilayers. ► The thickness of the Zn interlayer plays a dominant role on the magnitude of the MR effect. ► The GMR contribution of about 30% in the case of [Co (5 nm)/Zn (2.7 nm)] 50 films. - Abstract: In this report we describe some experimental results concerning the preparation by electrodeposition and characterization of Co/Zn multilayer films, a system of special significance because Co and Zn are immiscible in a large range of compositions, permitting an easier adaptation of the sharp interfaces and the magnetic interactions between layers, with a view to obtain technological applications in nano-electronics. We established the working parameters for electrodeposition of multilayer films based on Co and Zn nanoscale layers, using a dual-bath potentiostatic electrodeposition method. The effect of the first electrodeposited layer growth process on the structure and magnetic properties of the multilayer were studied by using two series of multilayers of varying periods, starting with Co or Zn layers, respectively (with the same total thickness of Co layers, namely 50 layers of 5 nm thick, but various Zn layer thickness). These properties were also studied as a function of the Zn layer thicknesses (varying between 0.1 nm and 5.9 nm), for the two series of films. The magnetoresistance (in the current in plane configuration with dc magnetic field applied in the film plane), varied with Zn layer thickness, exhibiting a giant magnetoresistance contribution of about 30% in the case of [Co (5 nm)/Zn (2.7 nm)] 50 films.

  7. Electrodeposition of bismuth telluride thermoelectric films from a nonaqueous electrolyte using ethylene glycol

    NARCIS (Netherlands)

    Nguyen, H.P.; Wu, M.; Su, J.; Vullers, R.J.M.; Vereecken, P.M.; Fransaer, J.

    2012-01-01

    Ethylene glycol was studied as an electrolyte for the electrodeposition of thermoelectric bismuth telluride films by cyclic voltammetry, rotating ring disk electrode and electrochemical quartz crystal microbalance (EQCM). The reduction of both Bi3+ and Te4+ ions proceeds in one step without the

  8. Electrodeposited Fe-Co films prepared from a citric-acid-based plating bath

    OpenAIRE

    Yanai, Takeshi; Uto, H.; Shimokawa, Takaya; Nakano, Masaki; Fukunaga, Hirotoshi; Suzuki, K.

    2013-01-01

    Electrodeposited Fe-Co films are commonly prepared in a boric-acid-based bath. In this research, we applied citric acid instead of boric acid for the plating of Fe-Co films because boron in the waste bath is restricted by environmental-protection regulations in Japan. We evaluated the effect of citric acid on the magnetic and structural properties of the films. The saturation magnetization of the Fe-Co films slightly increased while the Fe content in the Fe-Co films decreased with increasing ...

  9. Electrodeposition of polypyrrole films on aluminum surfaces from a p-toluene sulfonic acid medium

    Directory of Open Access Journals (Sweden)

    Andréa Santos Liu

    2009-01-01

    Full Text Available Electrodeposition of polypyrrole films on aluminum from aqueous solutions containing p-toluene sulfonic acid and pyrrole was performed by cyclic voltammetry and galvanostatic technique. The influence of applied current density on the morphology of the films was studied by Scanning Electron Microscopy. The films displayed a cauliflower-like structure consisting of micro-spherical grains. This structure is related to dopand intercalation in the polymeric chain. Films deposited at higher current density were more susceptible to the formation of pores and defects along the polymeric chain than films deposited at lower current density. These pores allow the penetration of aggressive species, thereby favoring the corrosion process.

  10. Impacts of Temperature on the Performance of Cdte Based Thin-Film Solar Cell

    Science.gov (United States)

    Asaduzzaman, Md.; Newaz Bahar, Ali; Maksudur Rahman Bhuiyan, Mohammad; Habib, Md. Ahsan

    2017-08-01

    In this investigation, the effect of temperature on the performance of CdTe based thin film solar cells has been studied. The parameters such as open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor and efficiency η determines the performance of solar cell. And an important diode parameter, reverse saturation current density, J 0 controls the impacts of temperature on the performance parameters. The reverse saturation current density of the CdTe photovoltaic cell, J 0 = CT 3exp(-qEg /kT) was determinedas optimum for C = 17.90 mAcm -2 K 3 yields CT 3 = 4.74 × 108 mAcm -2. In this case, 298 K is considered to be more suitable temperature to achieve optimized Voc, Jsc, FF, and η calculated for AM1.5G illumination spectra. The maximum attained values of performance parameters are compared with the experimental and theoretical results in the literature of CdTe solar cells. Moreover, the rate of change in performance parameters due to temperature are also measured and compared with the results available in the earlier published works.

  11. Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

    International Nuclear Information System (INIS)

    Wang Qingtao; Wang Guanzhong; Jie Jiansheng; Han Xinhai; Xu Bo; Hou, J.G.

    2005-01-01

    (001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 deg. C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (- 0.6∼- 0.8 V). When more negative potential (- 1.0∼- 1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials - 0.6∼- 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E g ) of the ZnO film prepared at - 1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH) 2 from the film after annealing

  12. Adsorption of organic layers over electrodeposited magnetite (Fe3O4) thin films

    International Nuclear Information System (INIS)

    Cortes, M.; Gomez, E.; Sadler, J.; Valles, E.

    2011-01-01

    Research highlights: → Adherent low roughness magnetite films ranging from 80 nm to 3.75 μm-thick were electrodeposited on Au/glass substrates under galvanostatic control. → X-ray diffraction and magnetic measurements corroborates the purity of the electrodeposited magnetite. → Both dodecanethiol and oleic acid are shown to adsorb on the magnetite prepared at low temperature, significantly inducing the hydrophobicity of the surface. → Contact angle and voltammetric measurements, as well as XPS confirm the monolayers formation. - Abstract: The formation of monolayers of two organic compounds (oleic acid and dodecanethiol) over magnetite films was studied. Magnetite films ranging from 80 nm to 3.75 μm-thick were electrodeposited on Au on glass substrates under galvanostatic control, with deposition parameters optimized for minimum surface roughness. Films were characterised by SEM and AFM, showing granular deposits with a low rms roughness of 5-40 nm measured over an area of 1 μm 2 . The growth rate was estimated by measuring cross-sections of the thin films. Pure magnetite with an fcc structure is observed in XRD diffractograms. The adsorption of both oleic acid and dodecanethiol on the magnetite films was tested by immersing them in ethanol solutions containing the organic molecules, for different deposition time, temperature and cleaning procedure. Monolayer formation in both cases was studied by contact angle and voltammetric measurements, as well as XPS.

  13. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    Directory of Open Access Journals (Sweden)

    Michael Powalla

    2007-01-01

    14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules. This contribution provides an overview of the basic technologies for CdTe and CIS modules, the research and development (R&D issues, production technology and capacities, the module performance in long-term outdoor testing, and their use in installations.

  14. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  15. Polycrystalline CdTe thin film mini-modules monolithically integrated by fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Bosio, A., E-mail: alessio.bosio@unipr.it [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy); Sozzi, M. [Department of Information Engineering, University of Parma, via G.P. Usberti 181/A, 43124 Parma (Italy); Menossi, D. [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy); Selleri, S.; Cucinotta, A. [Department of Information Engineering, University of Parma, via G.P. Usberti 181/A, 43124 Parma (Italy); Romeo, N. [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy)

    2014-07-01

    The CdTe thin film technology for photovoltaics (PV) is attractive because of its potential low cost and good performance. In thin film technology the efficiency of large area cells can be maintained if small segments are interconnected in series to reduce the photocurrent and resistance losses. In respect to this, the scribing process is critical for the performance of the device. Today, fiber lasers represent the most advanced and cheap technology that can be used in PV industry to carry out the cuts, needed for the monolithic integration, at different deposition stages. We will present our results on the scribing of CdTe thin film solar cells by means of fiber lasers, with pulse duration of a few nanoseconds and solid state lasers in the picosecond regime. The quality of the scribing was evaluated by optical and scanning electron microscopy. Finally, mini-modules with a total area of 10 × 10 cm{sup 2} were fabricated, in which the cells were interconnected in series by means of a scribing system, equipped with a fiber laser with the same characteristics of the system mounted on production lines. The mini-modules were characterized by photovoltaic and electrical measurements. - Highlights: • Study of laser scribing of CdTe-based mini-modules • Comparison between different lasers working in nanosecond and picosecond regimes • The laser scribing process was transferred to industrial production.

  16. 13.9%-efficient CdTe polycrystalline thin-film solar cells with an infrared transmission of {approx} 50%

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Duda, A.; Keane, J.C.; Gessert, T.A.; Yan, Y.; Noufi, R. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2005-07-01

    To fabricate a high-efficiency polycrystalline thin-film tandem cell, the most critical work is to make a high-efficiency top cell ( > 15%) with high bandgap (E{sub g} = 1.5-1.8 eV) and high transmission (T > 70%) in the near-infrared (NIR) wavelength region. The CdTe cell is one of the candidates for the top cell, because CdTe state-of-the-art single-junction devices with efficiencies of more than 16% are available, although its bandgap (1.48 eV) is slightly lower for a top cell in a current-matched dual-junction device. In this paper, we focus on the development of a: (1) thin, low-bandgap Cu{sub x}Te transparent back-contact; and (2) modified CdTe device structure, including three novel materials: cadmium stannate transparent conducting oxide (TCO), ZnSnO{sub x} buffer layer, and nanocrystalline CdS:O window layer developed at NREL, as well as the high-quality CdTe film, to improve transmission in the NIR region while maintaining high device efficiency. We have achieved an NREL-confirmed 13.9%-efficient CdTe transparent solar cell with an infrared transmission of {approx}50% and a CdTe/CIS polycrystalline mechanically stacked thin-film tandem cell with an NREL-confirmed efficiency of 15.3%. (Author)

  17. Synthesis and Characterization of Potentiostatically Electrodeposited Tungsten Oxide Thin Films for Smart Window Application

    Science.gov (United States)

    More, A. J.; Patil, R. S.; Dalavi, D. S.; Suryawanshi, M. P.; Burungale, V. V.; Kim, J. H.; Patil, P. S.

    2017-02-01

    Tungsten oxide (WO3) thin films have been synthesized using electrodeposition in potentiostatic mode and the effect of different deposition potentials on their structural, morphological, optical, and electrochromic (EC) properties investigated. The deposition potential versus saturated calomel electrode (SCE) was varied from -0.35 V to -0.50 V in steps of -0.05 V for 20 min each. The electrodeposited WO3 thin films were characterized using x-ray diffraction analysis, micro-Raman spectroscopy, field-emission scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectrophotometry, revealing amorphous nature with nanograins having average size from 40 nm to 60 nm. The EC performance of the WO3 thin films exhibited response times of 1.35 s for bleaching ( t b) and 3.1 s for coloration ( t c) with excellent reversibility of 64.36%. The highest coloration efficiency of the electrodeposited WO3 thin films was found to be 87.95 cm2/C. The electrochemical reversibility and stability of the WO3 thin films obtained in this study make them promising for use in smart window applications.

  18. Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films

    Science.gov (United States)

    Yang, Mengqian; Shen, Zhengwu; Liu, Xiaoqing; Wang, Wei

    2016-03-01

    Cu-Se binary compound films have been prepared by electrodeposition from solutions containing CuSO4, H2SeO3, and H2SO4 and their composition, structure, and thermoelectric performance analyzed. Moving the depositing potential negatively increased the Cu content in the film, remarkably so for relatively low Cu2+ concentration in the solution. X-ray diffraction analysis showed that the phase composition of the films varied with their Cu content. Cu-Se binary compound films electrodeposited from solutions with different concentration ratios of CuSO4 to H2SeO3 showed two different phases: α-Cu2- x Se (monoclinic) with Se content in the range of 33.3 at.% to 33.8 at.%, and β-Cu2Se (cubic) with Se content in the range of 35.3 at.% to 36.0 at.%. The highest power factor for electrodeposited Cu2- x Se film was 0.13 mW/(K2 m) with Seebeck coefficient of 56.0 μV/K.

  19. Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip

    Science.gov (United States)

    Schütt, S.; Vogt, A.; Frei, K.; Fischer, F.; Fiederle, M.

    2017-06-01

    Cadmium Telluride (CdTe) films are directly deposited on a CMOS (complementary metal-oxide-semiconductor) based readout chip as sensor layer for X-ray detection. This is performed by using a modified Molecular Beam Epitaxy (MBE) setup with a carbon collimator enabling growth rates up to 10 μm/h. To obtain a good contacting behaviour of the 25-50 μm thick CdTe films, Te and Sb2Te3 are additionally evaporated during the process. The investigation of polycrystalline sensor layers deposited at 400 °C with SEM (scanning electron microscopy) and XRD (X-ray diffraction) reveals a columnar growth of the individual grains oriented predominantly in (111). By PES (photoelectron spectroscopy) measurements the chemical composition of the different layers is identified in a depth profile and changes in work function along the contact structure are observed. Detector properties reveal a linear behaviour of the count rate with increasing radiation intensity as well as sensibility to holes and electrons. Spatial resolution measurements result in a resolution of 5 lp/mm, which is a mandatory requirement for medical applications.

  20. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. de Moure-Flores

    2012-06-01

    Full Text Available Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

  1. Preparation and characterization of Cu-In-S thin films by electrodeposition

    International Nuclear Information System (INIS)

    Martinez, A.M.; Fernandez, A.M.; Arriaga, L.G.; Cano, U.

    2006-01-01

    In this paper, we report the preparation and characterization of Cu-In-S thin films on stainless steel prepared by electrodeposition technique. The electrolytic bath used for preparation of the thin films consists of metal salts dissolved in a buffer solution. This buffer solution can control the formation and composition of thin films. In order to get adequate crystalline of CuInS 2 thin films, the as deposited films were annealed in N 2 -atmosphere. Samples were characterized using X-ray diffraction (XRD), electron probe micro-analysis (EPMA), and scanning electron microscopy (SEM). The band-gap value of the material was estimated using optical transmittance and reflectance data on thin films deposited on commercial glass/indium tin oxide (ITO) substrates. It was found that the band-gap of the films is close to 1.5 eV

  2. Challenges of sample preparation for cross sectional EBSD analysis of electrodeposited nickel films

    DEFF Research Database (Denmark)

    Alimadadi, Hossein; Pantleon, Karen

    2009-01-01

    . Different procedures for sample preparation including mechanical grinding and polishing, electropolishing and focused ion beam milling have been applied to a nickel film electrodeposited on top of an amorphous Ni-P layer on a Cu-substrate. Reliable EBSD analysis of the whole cross section can be obtained......Thorough microstructure and crystallographic orientation analysis of thin films by means of electron backscatter diffraction requires cross section preparation of the film-substrate compound. During careful preparation, changes of the rather non-stable as-deposited microstructure must be avoided...

  3. An investigation of effects of bath temperature on CdO films prepared by electrodeposition

    Science.gov (United States)

    Kıyak Yıldırım, Ayça; Altıokka, Barış

    2017-11-01

    CdO thin films were prepared by electrodeposition method. Solution temperatures were varied from 58 to 98 °C. It was understood from the film thicknesses and current densities that the reaction rate increased as the temperature increased. Good crystallization and a thick film were obtained at 98 °C. It was found that the energy band gap varied between 1.99 and 2.61 eV depending on the bath temperature. SEM images also showed that surface morphologies were dependent on bath temperature.

  4. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  5. Influence of citrate ions as complexing agent for electrodeposition of CuInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chraibi, F. [Universite Libre de Bruxelles (Belgium). Service de Sciences des Materiaux et Electrochimie; Universite Mohammed 5, Rabat (Morocco). Dept. de Physique; Fahoume, M.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Dept. de Physique; Delplancke, J.L. [Universite Libre de Bruxelles (Belgium). Service de Sciences des Materiaux et Electrochimie

    2001-08-16

    The preparation of CuInSe{sub 2} thin films by electrodeposition is studied. The effect of sodium citrate (Na{sub 3}C{sub 6}H{sub 5}O{sub 7}) as complexing agent on the electrodeposition of pure copper, indium, selenium and of their ternary alloy is emphasized. Cathodic shifts of the copper and selenium electrodeposition potentials with increasing citrate concentration are observed. On the contrary, the presence of citrate in the electrolyte does not change the indium electrodeposition potential but improves its crystallinity. The surface morphology and the composition of the deposited films are characterized by scanning electron microscopy (SEM). The texture of the deposits and their compositions are analyzed by X-ray diffraction. The formation of CuInSe{sub 2} films with a chalcopyrite structure and good stoichiometry is observed. (orig.)

  6. Dual-bath electrodeposition of n-type Bi–Te/Bi–Se multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matsuoka, Ken; Okuhata, Mitsuaki; Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp

    2015-11-15

    N-type Bi–Te/Bi–Se multilayer thin films were prepared by dual-bath electrodeposition. We varied the number of layers from 2 to 10 while the total film thickness was maintained at approximately 1 μm. All the multilayer films displayed the X-ray diffraction peaks normally observed from individual Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystal structures, indicating that both phases coexist in the multilayer. The cross-section of the 10-layer Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains but the boundaries between the layers were not planar. The Seebeck coefficient was almost constant throughout the entire range of our experiment, but the electrical conductivity of the multilayer thin films increased significantly as the number of layers was increased. This may be because the electron mobility increases as the thickness of each layer is decreased. As a result of the increased electrical conductivity, the power factor also increased with the number of layers. The maximum power factor was 1.44 μW/(cm K{sup 2}) for the 10-layer Bi–Te/Bi–Se film, this was approximately 3 times higher than that of the 2-layer sample. - Highlights: • N-type Bi–Te/Bi–Se multilayer thin films were deposited by electrodeposition. • We employed a dual-bath electrodeposition process for preparing the multilayers. • The Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains. • The electrical conductivity increased as the number of layers was increased. • The power factor improved by 3 times as the number of layers was increased.

  7. Non-coherent growth patches in pseudomorphic films: Unusual strain relief in electrodeposited Co on Cu(001)

    DEFF Research Database (Denmark)

    Schindler, W.; Koop, T.; Kazimirov, A.

    2000-01-01

    of electrodeposited films is in contrast to current belief of film relaxation. Moreover, a tetragonal distortion of the fee Co unit cell in the orthomorphic growth regime indicates residual strain in films of up to at least 100 monolayers thickness. (C) 2000 Elsevier Science B.V. All rights reserved....

  8. Supply risks associated with CdTe and CIGS thin-film photovoltaics

    International Nuclear Information System (INIS)

    Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

    2016-01-01

    Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn x Ga 1−x Se 2 ) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

  9. Parameters controlling microstructures and resistance switching of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Yazdanparast, Sanaz

    2016-12-01

    Cuprous oxide (Cu2O) thin films were electrodeposited cathodically from a highly alkaline bath using tartrate as complexing agent. Different microstructures for Cu2O thin films were achieved by varying the applied potential from -0.285 to -0.395 V versus a reference electrode of Ag/AgCl at 50 °C in potentiostatic mode, and separately by changing the bath temperature from 25 to 50 °C in galvanostatic mode. Characterization experiments showed that both grain size and orientation of Cu2O can be controlled by changing the applied potential. Applying a high negative potential of -0.395 V resulted in smaller grain size of Cu2O thin films with a preferred orientation in [111] direction. An increase in the bath temperature in galvanostatic electrodeposition increased the grain size of Cu2O thin films. All the films in Au/Cu2O/Au-Pd cell showed unipolar resistance switching behavior after an initial FORMING process. Increasing the grain size of Cu2O thin films and decreasing the top electrode area increased the FORMING voltage and decreased the current level of high resistance state (HRS). The current in low resistance state (LRS) was independent of the top electrode area and the grain size of deposited films, suggesting a filamentary conduction mechanism in unipolar resistance switching of Cu2O.

  10. Electrodeposition-Based Fabrication and Characteristics of Tungsten Trioxide Thin Film

    Directory of Open Access Journals (Sweden)

    Li Lin

    2016-01-01

    Full Text Available In this study, tungsten trioxide (WO3 thin films were electrodeposited on indium tin oxide (ITO glass to form WO3-coated glass. The electrodeposition (ED time (tED and ED current (IED were varied to control the film thickness and morphology. Furthermore, the crystallization of the thin films was controlled by annealing them at 250°C, 500°C, and 700°C. The results showed that the thickness of the WO3 thin films increased with tED and IED. The as-deposited thin films and those annealed at 250°C were amorphous, whereas the WO3 thin films annealed at 500 and 700°C were in the anorthic phase. Moreover, the amorphous WO3-coated glass exhibited high transmittance in visible light and low transmittance in near-infrared light, whereas the anorthic WO3-coated glass had high transmittance in near-infrared light. An empirical formula for determining the thickness of WO3 thin films was derived through multiple regressions of the ED process parameters.

  11. Effects of nitrogen atoms of benzotriazole and its derivatives on the properties of electrodeposited Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hoe Chul; Kim, Myung Jun; Lim, Taeho; Park, Kyung Ju; Kim, Kwang Hwan; Choe, Seunghoe [School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Kim, Soo-Kil, E-mail: sookilkim@cau.ac.kr [School of Integrative Engineering, Chung-Ang University, 221 Heukseok-dong, Dongjak-gu, Seoul 156-756 (Korea, Republic of); Kim, Jae Jeong, E-mail: jjkimm@snu.ac.kr [School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of)

    2014-01-01

    Additives having azole groups with different numbers of nitrogen atoms, such as indole, benzimidazole, indazole, benzotriazole (BTA), and 1H-benzotriazole-methanol (BTA-MeOH) were adopted to improve the mechanical hardness of electrodeposited Cu films. The effects of these additives on the film properties were elucidated in relation to their number of nitrogen atoms. Electrochemical current–potential behaviors showed that the additives containing three nitrogen atoms (BTA and BTA-MeOH) more effectively inhibited Cu electrodeposition. The inhibition strongly affected the film properties, resulting in reduced grain size and surface roughness, and increased resistivity and hardness. Cu films deposited with BTA or BTA-MeOH also exhibited 35% reduced grain size and 1.5-time higher hardness than Cu films deposited in electrolyte containing other BTA-derivatives having fewer nitrogen atoms. This notable grain refining effect of BTA and BTA-MeOH can be evaluated with respect to the strong interaction of their nitrogen atoms with the substrate and the copper ions, as well. - Highlights: • Additives of similar structure containing 1, 2, and 3 nitrogen atoms were used. • Additives with 3 nitrogen atoms more strongly inhibited Cu deposition than others. • Additives containing 3 nitrogen atoms efficiently affected film properties. • Additives having 3 nitrogen atoms remarkably improved film hardness.

  12. Preparation of ordered mesoporous nickel oxide film electrodes via lyotropic liquid crystal templated electrodeposition route

    International Nuclear Information System (INIS)

    Zhao Dandan; Xu Maowen; Zhou Wenjia; Zhang Jin; Li Hulin

    2008-01-01

    A novel electrochemical route to fabricate ordered mesoporous metal oxide film electrodes has been investigated with particular reference to nickel oxide. Ordered mesoporous nickel oxide films are successfully synthesized by templated electrodeposition of H I -e nickel hydroxide and followed by heat-treatment in air at various temperatures. The films are characterized physically by thermogravimetry (TG), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The applicability of this film as inexpensive and high-performance supercapacitor electrode material is demonstrated by the electrochemical characterization using cyclic voltammetry (CV) and chronopotentiometry technique. The specific capacitance of the nickel oxide film depends on the annealing temperature, showing a maximum value of 590 F g -1 when the as-deposited film is heat-treated at 250 deg. C for 1.5 h

  13. Taste Sensing Based on Frequency Characteristics of Quartz Resonator with Oleic Acid Film Electrodeposition

    Science.gov (United States)

    Mukai, Keiichi; Misawa, Kenji; Kitama, Masataka; Yamashita, Masaji; Arisawa, Junij

    In this paper, we studied a possibility of a taste sensing using a quartz crystal microbalance (hereafter cited as QCM) sensor. We modified oleic acid film to Au electrode of the quartz resonator by an electrodeposition method. The electrodeposition film was used as the adsorber for taste substances. We consider that oscillation frequency decreases with the mass changes due to adsorption. Frequency characteristics differed in each basic taste solution. Their characteristics were based on chemical nature of taste substances. Ions or organic molecules were attached to electrodeposition film by electrostatic interaction or hydrophobic interaction respectively. Moreover, we studied the taste evaluation of sweetness solutions and sourness solutions. As a result, in case of sweetness solutions, the frequency changes correlated with Brix (%) (r = -0.98). In case of sourness solutions, especially, the frequency changes correlated in pH (r = 0.89) of organic acids. Differences of the frequency changes depended on the amount of undissociated molecule in the acid solutions. Additionally, taste evaluation by the QCM sensor related to gustatory sense of human. Therefore, we suggested the validity of the QCM sensor for evaluation of the taste solutions.

  14. Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni–W alloy films

    International Nuclear Information System (INIS)

    Armstrong, D.E.J.; Haseeb, A.S.M.A.; Roberts, S.G.; Wilkinson, A.J.; Bade, K.

    2012-01-01

    Nanocrystalline nickel–tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni–12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni–12.7 at.%W was in the range of 1.49–5.14 MPa √m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: ► Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. ► Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. ► Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. ► Fracture toughness values lower than that of nanocrystalline nickel.

  15. Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni-W alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, D.E.J., E-mail: david.armstrong@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Haseeb, A.S.M.A. [Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Roberts, S.G.; Wilkinson, A.J. [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Bade, K. [Institut fuer Mikrostrukturtechnik (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2012-04-30

    Nanocrystalline nickel-tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni-12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni-12.7 at.%W was in the range of 1.49-5.14 MPa {radical}m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: Black-Right-Pointing-Pointer Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. Black-Right-Pointing-Pointer Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. Black-Right-Pointing-Pointer Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. Black-Right-Pointing-Pointer Fracture toughness values lower than that of nanocrystalline nickel.

  16. Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

    1999-09-30

    ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

  17. Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

    Energy Technology Data Exchange (ETDEWEB)

    Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

    2017-08-17

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

  18. Fabrication of stable large-area thin-film CdTe photovoltaic modules

    Science.gov (United States)

    Nolan, J. F.; Meyers, P. V.

    1993-08-01

    This report highlights the progress made by Solar Cells, Inc. (SCI), in its program to produce 60-cm x 120-cm solar modules based on CdTe films. During the past year, confirmed efficiency has increased to 10.4% (active area) on a 1 sq cm cell, 9.8% (aperture area) on a 64 sq cm 8-cell submodule, and 6.6% (total area) on a 7200 sq cm module. A module measured in-house had a power output of 53 W, for a total-area efficiency of 7.4%. Average efficiency of modules produced is steadily increasing and standard deviation is decreasing; in a limited run of 12 modules, results were 6.3% +/- 0.2%. Field testing has begun; a nominal 1-kW array of 24 modules was set up adjacent to SCI's facilities. Analysis indicates that present modules are limited in efficiency by shunt resistance and optical absorption losses in the glass superstrate. Loss analysis of present devices allows us to project a module efficiency of 11.8%. A third generation deposition method, atmospheric pressure elemental vapor deposition (APEVD), has been brought on-line and has produced good quality CdTe. In addition, SCI is expanding its pro-active safety, health, environmental, and disposal program dealing with issues surrounding cadmium.

  19. Use of photoluminescence spectroscopy to characterize the crystalline quality of CdTe films grown by a modified CSVT technique

    International Nuclear Information System (INIS)

    Mendoza-Alvarez, J.G.; Sanchez-Sinencio, F.; Zelaya, O.; Gonzalez-Hernandez, Y.J.; Cardenas, M.; Chao, S.S.

    1987-01-01

    The authors have employed photoluminescence measurements at 10-300 0 K to study the effects of deposition parameters, surface preparation and heat treatment on the properties of CdTe polycrystalline thin films. The films were grown using a modified hot wall close spaced vapor transport system. The authors found strong differences in the photoluminescence spectra of samples grown under different conditions. Heat treatments in the as-grown samples increase the average particle size and reduce the native defect density

  20. Composition and growth procedure-dependent properties of electrodeposited CuInSe 2 thin films

    Science.gov (United States)

    Babu, S. Moorthy; Ennaoui, A.; Lux-Steiner, M. Ch.

    2005-02-01

    CuInSe 2 thin films were deposited on molybdenum-coated glass substrates by electrodeposition. Deposition was carried out with a variety of electrochemical bath compositions. The quality of the deposits depends very much on the source materials as well as the concentration of the same in the electrolyte. The deposition potential was varied from -0.4 to -0.75 V vs. SCE. The pH of the solution was adjusted to 1.5-2 using diluted sulphuric acid. Chloride salts containing bath yield good surface morphology, but there is always excess of the metallic content in the deposited films. Different growth procedures, like initial metallic layers of copper or indium, layers of copper selenide or indium selenide before the actual deposition of ternary chalcopyrite layers were attempted. Fabrication pathway, morphological and compositional changes due to the different precursor route has been analysed. The quality of the deposits prepared by one-step electrodeposition is better than the deposits with a two-stage process. The deposited films were characterized with XRD, SEM-EDAX, UV-visible spectroscopy and I- V characteristics. The deposited films were annealed in air as well as in nitrogen atmosphere. The influence of annealing temperature, environment and annealing time on the properties of the films are evaluated. Attempts were made to fabricate solar cell structure from the deposited absorber films. The structure of Mo/CuInSe 2/CdS/ZnO/Ni was characterized with surface, optical and electrical studies.

  1. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  2. Fabrication of CIGS Films by Electrodeposition Method for Photovoltaic Cells

    Science.gov (United States)

    Lee, Hyunju; Yoon, Hyukjoo; Ji, Changwook; Lee, Dongyun; Lee, Jae-Ho; Yun, Jae-Ho; Kim, Yangdo

    2012-12-01

    Cu(InGa)Se2 (CIGS) thin films were fabricated by electrochemical deposition in a single bath containing Cu, In, Ga, and Se ions. The electrolyte was prepared by dissolving CuCl2, InCl3, GaCl3, H2SeO3, and LiCl in deionized water. The potentiostatic deposition process was achieved by applying a voltage ranging from -0.5 V to -0.8 V versus Ag/AgCl. The effects of different chemical bath concentrations on the film composition and morphology were investigated. Stoichiometric CIGS film composition could be achieved by controlling the chemical compositions of the bath and the voltage. Gelatin was added to the solution to improve the surface and microstructures of the CIGS film. The as-deposited films were annealed at 500°C in Ar atmosphere for crystallization. The structural, morphological, and compositional properties of the CIGS thin films before and after annealing were examined by x-ray diffraction, scanning electron microscopy, and energy-dispersive spectroscopy. This study showed that the composition of the CIGS films is dependent on the bath concentration, whereas the applied potential had relatively less effect on the CIGS film composition. In addition, the use of gelatin helped in the fabrication of crack-free CIGS thin films with greatly improved surface morphology.

  3. Near-IR Electrochromism in Electrodeposited Thin Films of Cyclometalated Complexes.

    Science.gov (United States)

    Ionescu, Andreea; Aiello, Iolinda; La Deda, Massimo; Crispini, Alessandra; Ghedini, Mauro; De Santo, Maria Penelope; Godbert, Nicolas

    2016-05-18

    Homogeneous thin films of controlled thickness obtained from cyclometalated complexes of general formula [(C(∧)N)M(O(∧)N)], where M = Pd(II) or Pt(II), H(C(∧)N) = 2-phenylpyridine and, respectively, 2-thienylpyridine and H(O(∧)N) = a triphenylamine functionalized Schiff base, have been deposited by oxidative electropolymerization. The films have been electrochemically and morphologically characterized. The metallopolymeric thin films present stable reversible redox behavior and typical cauliflower-like textures in agreement with a nucleation-growth electropolymerization mechanism. However, the film growth is greatly influenced by the nature of the metal center, with a higher tendency of the Pt complexes to promote the 3D growth. Furthermore, a complete spectroelectrochemical study has been performed on electrodeposited films showing near-IR absorption in the oxidized state, high contrast ratios (up to 65%) and low response times.

  4. Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

    Directory of Open Access Journals (Sweden)

    Javier A. Barón-Miranda

    2016-12-01

    Full Text Available The local electrical response in alkaline-doped CuInSe2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe2 (CIS films were prepared from single baths containing the dopant ions (Li, Na, K or Cs and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li- and Na-doped films had larger conductivity than the undoped film while the K- and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the K- and Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

  5. In-situ CdCl{sub 2}-treated CdTe film surface analysis by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vamsi Krishna, K.; Dutta, V. [Centre for Energy Studies, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 100 016 (India)

    2004-07-01

    CdTe thin films are deposited using a spray pyrolysis technique without and with in-situ CdCl{sub 2} treatment. An X-ray photoelectron spectroscopy technique is used to study the Cd, Te, O and Cl chemical environments and the valence-band spectra of the CdTe film surface. A shift in the Fermi-level position of {proportional_to}200 meV towards the valence-band maximum is observed in the CdTe film after the in-situ CdCl{sub 2} treatment, which is attributed to the increment of the Cl concentration and the improvement in the grain growth of the CdTe film. In addition to the increment of the Cl concentration, less surface oxidation is observed compared to that for ex-situ treatment. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electrodeposition route to synthesize cigs films – an economical way ...

    African Journals Online (AJOL)

    Copper Indium Gallium Selenide has become one of the most highly promising absorber materials for thin film solar cells due to its exceptional semiconductor characteristics. Various attempts have been made in the recent years to scale up the production of these films. In this review the difficulty in scaling up of the existing ...

  7. Electroluminescence of thin-film CdTe solar cells and modules

    Science.gov (United States)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  8. Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

    Energy Technology Data Exchange (ETDEWEB)

    Brog, T.K. [Golden Photon, Inc., CO (United States)

    1997-02-01

    This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

  9. Comparison of CdS films deposited by different techniques: Effects on CdTe solar cell

    International Nuclear Information System (INIS)

    Lee, Jaehyeong

    2005-01-01

    Polycrystalline cadmium sulfide (CdS) thin-films were deposited on glass substrate by chemical bath deposition (CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling

  10. Physical properties of spray deposited CdTe thin films: PEC performance

    International Nuclear Information System (INIS)

    Nikale, V. M.; Shinde, S. S.; Bhosale, C. H.; Rajpure, K.Y.

    2011-01-01

    p-CdTe thin films were prepared by spray pyrolysis under different ambient conditions and characterized using photoelectrochemical (PEC), X-ray diffraction (XRD), scanning electron microscopy, energy-dispersive analysis by X-ray (EDAX), and optical transmission studies. The different preparative parameters viz solution pH, solution quantity, substrate temperature and solution concentration have been optimized by the PEC technique in order to get good-quality photosensitive material. XRD analysis shows the polycrystalline nature of the film, having cubic structure with strong (111) orientation. Micrographs reveal that grains are uniformly distributed over the surface of the substrate indicating the well-defined growth of polycrystalline CdTe thin film. The EDAX study for the sample deposited at optimized preparative parameters shows the nearly stoichiometric Cd : Te ratio. Optical absorption shows the presence of direct transition with band gap energy of 1.5 eV Deposited films exhibit the highest photocurrent of 2.3 mA, a photovoltage of 462 mV, a 0.48 fill factor and 3.4% efficiency for the optimized preparative parameters. (semiconductor materials)

  11. Thermoelectric properties of electrodeposited tellurium films and the sodium lignosulfonate effect

    International Nuclear Information System (INIS)

    Abad, Begoña; Rull-Bravo, Marta; Hodson, Stephen L.; Xu, Xianfan; Martin-Gonzalez, Marisol

    2015-01-01

    The effect of the addition of a surfactant, sodium lignosulfonate (SLS), on the thermoelectric properties of tellurium films prepared by electrochemical deposition is studied. The growth mechanism is found to have an important role in the thermoelectric properties since the grain size of the films is sharply reduced when the surfactant is added to the solution. For this reason, the electrical resistivity of the tellurium films when the surfactant is not added is 229 μΩ·m, which is lower than 798 μΩ·m with SLS. The Seebeck coefficient values are not influenced, with values in the vicinity of 285 μV/K for both solutions. The power factor resulted higher values than previous works, reaching values of 280 μW/m·K 2 (without SLS) and 82 μW/m·K 2 (with SLS) at room temperature. Finally, the thermal conductivity was measured by means of the Photoacoustic technique, which showed values of the order of 1 W/m·K for both solutions, which is a factor of 3 less than the bulk value of tellurium. A notable observation is that the power factor and the thermal conductivity of electrodeposited tellurium films have the same order of magnitude of bismuth telluride films grown by electrodeposition. The figure of merit is estimated to be approximately one order of magnitude higher than the bulk value, 0.09 without SLS and 0.03 with SLS, both at room temperature

  12. Rocking disc electro-deposition of copper films on Mo/MoSe{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cummings, Charles Y.; Frith, Paul E. [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Zoppi, Guillaume; Forbes, Ian [Northumbria Photovoltaics Applications Centre, Northumbria University, NE1 8ST (United Kingdom); Rogers, Keith D. [Cranfield Health, Cranfield University, Shrivenham Campus, Swindon, SN6 8LA (United Kingdom); Lane, David W. [Department of Applied Science, Security and Resilience, Cranfield University, Shrivenham, Swindon, SN6 8LA (United Kingdom); Marken, Frank, E-mail: F.Marken@bath.ac.uk [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

    2011-08-31

    A novel electro-deposition method based on a rocking disc system with {pi}/3 amplitude and variable frequency is introduced. Uniform copper films were deposited from a 0.1 M CuSO{sub 4}/3.0 M NaOH/0.2 M sorbitol bath directly onto 12.1 cm{sup 2} Mo/MoSe{sub 2} substrates with X-ray diffraction showing a thickness variation of {+-}5% over this area. Investigation of the mass transport conditions suggests (i) uniform diffusion over the sample, (ii) a rate of mass transport proportional to the square root of the rocking rate, and (iii) turbulent conditions, which are able to dislodge gas bubbles during electro-deposition.

  13. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    Science.gov (United States)

    Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  14. Simple Formation of Nanostructured Molybdenum Disulfide Thin Films by Electrodeposition

    Directory of Open Access Journals (Sweden)

    S. K. Ghosh

    2013-01-01

    Full Text Available Nanostructured molybdenum disulfide thin films were deposited on various substrates by direct current (DC electrolysis form aqueous electrolyte containing molybdate and sulfide ions. Post deposition annealing at higher temperatures in the range 450–700°C transformed the as-deposited amorphous films to nanocrystalline structure. High temperature X-ray diffraction studies clearly recorded the crystal structure transformations associated with grain growth with increase in annealing temperature. Surface morphology investigations revealed featureless structure in case of as-deposited surface; upon annealing it converts into a surface with protruding nanotubes, nanorods, or dumbbell shape nanofeatures. UV-visible and FTIR spectra confirmed about the presence of Mo-S bonding in the deposited films. Transmission electron microscopic examination showed that the annealed MoS2 films consist of nanoballs, nanoribbons, and multiple wall nanotubes.

  15. Synthesis and characterization of electrodeposited SnS films

    International Nuclear Information System (INIS)

    Jim, W. Y.; Sun, Y. C.; Djurišić, A. B.; Chan, W. K.

    2013-01-01

    Here we systematically investigated the effect of solution concentration and growth temperature on the properties of SnS thin films. The properties of deposited films were investigated by scanning electron microscopy and energy dispersive X-ray spectroscopy. We found that sample quality is strongly affected by deposition conditions and that the sample composition exhibits strong temperature dependence. Detailed discussion of material properties dependence on the growth conditions is given

  16. Band edges determination of CuInS2 thin films prepared by electrodeposition

    International Nuclear Information System (INIS)

    Martinez, A.M.; Arriaga, L.G.; Fernandez, A.M.; Cano, U.

    2004-01-01

    A CuInS 2 (CIS) semiconductor thin film was growth by electrodeposition on a stainless steel substrate. In order to improve the polycrystallinity the samples were annealed in a N 2 atmosphere. The films were characterized by electrochemical techniques and X ray diffraction and their band gaps were determined by photocurrent spectroscopy. When the electrolytic bath has the same concentration [Cu 2+ ] = [In 3+ ] the resulting film was of the n-type, while for different concentrations of Cu and In ions the film was of the p-type. A depletion zone during capacitance-voltage measurements at 10 kHz frequency was seen over the voltage range used. Using C-V plots in the depletion zone, flat-band potentials and the energetic position of band edges were calculated

  17. Super-hydrophobic nickel films with micro-nano hierarchical structure prepared by electrodeposition

    International Nuclear Information System (INIS)

    Hang Tao; Hu Anmin; Ling Huiqin; Li Ming; Mao Dali

    2010-01-01

    Super-hydrophobic nickel films were prepared by a simple and low cost electrodepositing method. The surface morphologies of the films characterized by scanning electronic microscope exhibit hierarchical structure with micro-nanocones array, which can be responsible for their super-hydrophobic characteristic (water contact angle over 150 o ) without chemical modification. The wettability of the film can be varied from super-hydrophobic (water contact angle 154 o ) to relatively hydrophilic (water contact angle 87 o ) by controlling the size of the micro-nanocones. The mechanism of the hydrophobic characteristic of nickel films with this unique structure was illustrated by several models. Such micro-nanostructure and its special wettability are expected to be applied in the practical industry.

  18. Effect of CdCl{sub 2} treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.A. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Hossain, M.S.; Aliyu, M.M. [Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Karim, M.R. [Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia); Razykov, T.; Sopian, K. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshad@eng.ukm.my [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia)

    2013-11-01

    The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl{sub 2} solution treatment have been studied with a major focus on the influence of CdCl{sub 2} treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2 μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250 °C. Aqueous CdCl{sub 2} concentration varied from 0.3 mol to 1.2 mol with the annealing temperature from 360 °C to 450 °C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360 °C with 0.3 M to1.2 M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl{sub 2} concentration and subsequent annealing temperature. The highest carrier concentration of 1.05 × 10{sup 14}/cm{sup 3} was found for the CdTe thin films treated with 0.3 M CdCl{sub 2} solution followed by an annealing treatment at 420 °C for 20 min. - Highlights: • CdTe thin films are grown as absorption layers in CdTe solar cells by sputtering. • CdTe film quality in terms of structural and electronic properties is examined. • All growth parameters are optimized in the range of 1.5 to 2 μm CdTe films.

  19. Investigation of the magnetic properties of electrodeposited NiFe thin films

    International Nuclear Information System (INIS)

    Bakkaloglu, O. F.; Bedir, M.; Oeztas, M.; Karahan, I. H.

    2002-01-01

    Most magnetic devices used today are based on the magnetic thin film. Rapid and extensive developments in magnetic sensor / actuator and magnetic recording technology place a growing demand on the use of different thin film fabrication techniques for magnetic materials. The electroplating technique is especially interesting due to its low cost, high throughput and high quality of the deposits which are extensively used in the magnetic recording industry to deposit relatively thick permalloy layers. Much recent attention has focused on the electrodeposited NiFe thin films, which exhibit giant magneto resistive behaviour as well as anisotropic magnetoresistance properties. n this study, NiFe thin films were developed by using electrodeposition technique and their crystallinity structures were investigated by using x-ray diffractometer measurements. The magneto resistive properties of the samples were investigated by Wan der Pauw method with a home made electromagnet under the different magnetic fields. The magnetoresistance measurements of the samples were carried out in two configurations; current parallel ( longitudinal ) and perpendicular ( transverse ) to the magnetic field. In the longitudinal configuration giant magnetoresistance was observed while anisotropic magnetoresistance was detected in the other configuration

  20. Synergetic effect of additives on the hardness and adhesion of thin electrodeposited copper films

    Directory of Open Access Journals (Sweden)

    Mladenović Ivana

    2017-01-01

    Full Text Available Thin copper films were electrodeposited on a polycrystalline coldrolled copper substrate. The composition of the laboratory-made copper sulphate electrolyte was changed by the addition of various additives. The influence of chloride ion (Cl-, polyethylene glycol (PEG and 3-mercapto-1-propane sulfonic acid (MPSA on mechanical and adhesion properties of the electrodeposited copper films was investigated using Vickers microindentation technique. Calculations of the film hardness and adhesion were carried out using composite hardness models of Korsunsky and Chen-Gao. The hardness of the composite system is influenced by the adhesion of the copper film to the substrate. Increasing adhesion corresponds to increasing values of the calculated adhesion parameter b, named the critical reduced depth. When additives are added to a plating solution, the copper deposition mechanism is changed and fine-grained microstructure without the formation of microscopic nodules is obtained. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. TR 32008, Grant no. TR 34011 and Grant no. III 45019

  1. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  2. Phosphorus-doped bismuth telluride films by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Jian, E-mail: jzhou@xmu.edu.cn [Department of Materials Science and Engineering, College of Materials, Xiamen 361005 (China); Lin, Qinghan; Li, Hengyi [Department of Materials Science and Engineering, College of Materials, Xiamen 361005 (China); Cheng, Xuan [Department of Materials Science and Engineering, College of Materials, Xiamen 361005 (China); Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005 (China)

    2013-08-15

    Phosphorus-doped Bi{sub 2}Te{sub 3} films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi{sub 2}Te{sub 3} solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient −1.76E−2 m{sup 3} C{sup −1} and the electrical conductivity 280 S cm{sup −1}. The thermal conductivity is 0.47 W m{sup −1} K{sup −1}, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi{sub 2}Te{sub 3}. - Graphical abstract: Display Omitted - Highlights: • Phosphorus-doped Bi{sub 2}Te{sub 3} films were synthesized on a stainless-steel electrode by electrochemical deposition. • The thermal conductivity of the film is 0.47 W m{sup −1} K{sup −1}, which is one-third of the value observed in the bulk material. • The doped P atoms occupy the interstitial positions in Bi{sub 2}Te{sub 3}.

  3. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  4. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  5. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  6. Thin-film-based CdTe photovoltaic module characterization: Measurements and energy prediction improvement

    Science.gov (United States)

    Lay-Ekuakille, A.; Arnesano, A.; Vergallo, P.

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m2. About 37 000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m2 and from -1 to 40 W/m2 from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  7. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    Science.gov (United States)

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  8. Tunable copper microstructures in blanket films and trenches using pulsed electrodeposition

    Science.gov (United States)

    Marro, James

    Copper interconnects in microelectronics have long been plagued with thermo-mechanical reliability issues. Control over the copper deposition process and resulting microstructure can dictate its material properties and reduce stresses as well as defects that form in the copper. In this thesis, pulse electrodeposition processing parameters were evaluated for their impact on the copper microstructure (grain size, texture, and twin density and stress state) through electron backscattering diffraction and wafer curvature measurements. Varying levels of constraint were also investigated for their effect on the copper microstructure to better understand the microstructures of more complex three-dimensional interconnects. Highly texture blanket copper films were deposited with various pulse frequencies and duty cycle, which was found to control grain size, orientation, and twin density. Higher twin densities were also observed in the films with lower residual stress. The findings from blanket film studies were carried over to trench deposited samples, where the influence of organic additives, typically used in the electrolytic bath to produce defect-free filling of advanced geometries, on the copper microstructure was studied. With the addition of organic additives, depositions produced finer grained structures with an increased contribution from the microstructure of the trench sidewall seed layer, especially with increasing trench aspect ratio. In addition, the increased constraint of the copper, resulted in larger stresses within the features and higher twin densities. The core of this dissertation demonstrated the ability to alter the resulting Cu microstructure through variations in pulse electrodeposition parameters.

  9. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications.

    Science.gov (United States)

    Parsai, E Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-01

    The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  10. One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

    Science.gov (United States)

    Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

    2005-03-01

    Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

  11. Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O2 atmosphere

    International Nuclear Information System (INIS)

    Ding, Chao; Ming, Zhenxun; Li, Bing; Feng, Lianghuan; Wu, Judy

    2013-01-01

    Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O 2 . • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures ( 400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T s ). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O 2 (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O 2 (15 Torr) and at the relatively high T s (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an efficiency of 6.68% was fabricated

  12. CdTe devices and method of manufacturing same

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  13. Thin Film Electrodeposition of Ir(III Cyclometallated Complexes

    Directory of Open Access Journals (Sweden)

    Andreea Ionescu

    2016-01-01

    Full Text Available Novel electropolymerizable Ir(III cyclometallated complexes have been synthesized and characterized. In these complexes the cyclometallated ligands are either 2-phenylpyridine H(PhPy or benzothiazole-triphenylamine H(BzTh-tpa, while the Ir(III coordination sphere is completed by a Schiff base substituted with a triphenylamine fragment. A complete electrochemical study has been conducted on all complexes, in order to verify the feasibility of electropolymerization and to elucidate the role of the specific position of the triphenylamine moiety in the molecular structure. Homogeneous thin films of Ir(III metallopolymers have been successfully obtained through electropolymerization process.

  14. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  15. Synthesis and characteristics of PbTe1-xSex thin films formed via electrodeposition

    Science.gov (United States)

    Bae, Sangwoo; Lee, Sangwon; Sohn, Ho-Sang; Lee, Ho Seong

    2017-09-01

    PbTe1-xSex films were grown using electrodeposition and their microstructural and electrical properties were investigated. The Se content incorporated in the PbTe1-xSex films increased with the Se content in the electrolyte. X-ray diffraction peaks of the PbTe1-xSex films shifted to higher angles according to Vegard's law. For the sample with a small Se content, the PbTe1-xSex films showed a characteristic feather-like dendrite, while PbTe1-xSex films with a higher Se content showed faceted particles. Transmission electron microscopy results showed that the feather-like dendritic PbTe1-xSex grew like a single crystal and a growing twinning was formed in some dendrites. With an increase in the Se content in the PbTe1-xSex thin films, the carrier concentrations increased but the mobility reduced. Electrical conductivity of the PbTe1-xSex thin films increased and then slightly decreased with increasing Se content.

  16. Controlled electrodeposition of Au monolayer film on ionic liquid

    Science.gov (United States)

    Ma, Qiang; Pang, Liuqing; Li, Man; Zhang, Yunxia; Ren, Xianpei; Liu, Shengzhong Frank

    2016-05-01

    Gold (Au) nanoparticles have been attractive for centuries for their vibrant appearance enhanced by their interaction with sunlight. Nowadays, there have been tremendous research efforts to develop them for high-tech applications including therapeutic agents, sensors, organic photovoltaics, medical applications, electronics and catalysis. However, there remains to be a challenge to fabricate a monolayer Au coating with complete coverage in controlled fashion. Here we present a facile method to deposit a uniform Au monolayer (ML) film on the [BMIM][PF6] ionic liquid substrate using an electrochemical deposition process. It demonstrates that it is feasible to prepare a solid phase coating on the liquid-based substrate. Moreover, the thickness of the monolayer coating can be controlled to a layer-by-layer accuracy.

  17. Electrodeposition Combination with Hydrothermal Preparation of ZnO Films and Their Application in Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Xiaoping Zou

    2014-01-01

    Full Text Available A suitable method is necessary for the high performance of dyes-sensitized solar cells (DSSCs. In this paper, photoanodes of DSSCs have been fabricated through electrodeposition and combination with hydrothermal method. The results of mix method showed better performance than the single one. After the second step electrodeposition, the ZnO films formed flack finally. With the increase of hydrothermal time, ZnO films become thicker and bigger, which can offer large surface area to absorb much more dyes. The short-circuit current (2.4 mA/cm2 and open-circuit voltage (0.67 V were greater than the single one, alternating current impedance indicating that electrodeposition and hydrothermal mix are a more suitable method for high performance DSSCs. We expected to obtain higher conversion efficiency of DSSCs by this method.

  18. Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Z.G. [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); Cai, K.F., E-mail: kfcai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Chen, S.; Qin, Z. [Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China)

    2012-11-15

    Highlights: ► Bi{sub 2}Te{sub 3−y}Se{sub y} films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. -- Abstract: Bi{sub 2}Te{sub 3−y}Se{sub y} films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi{sub 2}Te{sub 3−y}Se{sub y} films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi{sub 2}Te{sub 3−y}Se{sub y} film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92 μV/K and electrical resistivity in the range of 102.9–109.4 μΩ m. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.

  19. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

    2017-01-01

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

  20. Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

    International Nuclear Information System (INIS)

    Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

    2013-01-01

    With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

  1. Electrodeposition of nickel from low temperature sulfamate electrolytes.Part 1 :Electrochemistry and film stress.

    Energy Technology Data Exchange (ETDEWEB)

    Hachman, John T.; Kelly, J.J. (IBM/T.J. Watson Research Center, Yorktown Heights, NY); Talin, Albert Alec; Goods, Steven Howard

    2005-11-01

    The film stress of Ni films deposited at near-ambient temperatures from sulfamate electrolytes was studied. The particulate filtering of the electrolyte, a routine industrial practice, becomes an important deposition parameter at lower bath temperatures. At 28 C, elevated tensile film stress develops at low current densities (<10 mA/cm{sup 2}) if the electrolyte is filtered. Filtering at higher current densities has a negligible effect on film stress. A similar though less pronounced trend is observed at 32 C. Sulfate-based Ni plating baths display similar film stress sensitivity to filtering, suggesting that this is a general effect for Ni electrodeposition. It is shown that filtering does not significantly change the current efficiency or the pH near the surface during deposition. The observed changes in film stress are thus attributed not to adsorbed hydrogen but instead to the effects of filtering on the formation and concentration of polyborate species due to the decreased solubility of boric acid at near-ambient temperatures.

  2. Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

    Science.gov (United States)

    Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

    2018-04-01

    Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.

  3. Easy Formation of Nanodisk-Dendritic ZnO Film via Controlled Electrodeposition Process

    Directory of Open Access Journals (Sweden)

    Nur Azimah Abd Samad

    2015-01-01

    Full Text Available A facile electrodeposition synthesis was introduced to prepare the nanodisk-dendritic ZnO film using a mixture solution of zinc chloride (ZnCl2 with potassium chloride (KCl that acted as a directing agent. This study aims to determine the best photoelectrochemical response for solar-induced water splitting. Based on our results obtained, it was found that an average diagonal of nanodisk was approximately 1.70 µm with the thickness of ≈150 nm that was successfully grown on the surface of substrate. The photocatalytic and photoelectrochemical responses of the resultant wurtzite type based-nanodisk-dendrite ZnO film as compared to the as-prepared ZnO film were monitored and evaluated. A photocurrent density of 19.87 mA/cm2 under ultraviolet rays and 14.05 mA/cm2 under visible light (500 nm was recorded for the newly developed nanodisk-dendritic ZnO thin film. It was believed that nanodisk-dendritic ZnO film can harvest more incident photons from the illumination to generate more photoinduced charge carriers to trigger the photocatalytic and photoelectrochemical reactions. Moreover, strong light scattering effects and high specific surface area of 2D nanostructures aid in the incident light absorption from any direction.

  4. Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films

    International Nuclear Information System (INIS)

    Manzoli, A.; Eguiluz, K.I.B.; Salazar-Banda, G.R.; Machado, S.A.S.

    2010-01-01

    Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine-tin oxide (FTO) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L -1 and a film when it was 0.2 or 0.3 mol L -1 . The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film-electrolyte interface capacitance (C) at various applied potentials (E ap ) and plotting Mott-Schottky curves (C -2 vs E ap ), whose slope sign was used to identify p-type ZnSe.

  5. A study on the electrodeposition of NiFe alloy thin films using chronocoulometry and electrochemical quartz crystal microgravimetry

    CERN Document Server

    Myung, N S

    2001-01-01

    Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

  6. Processing of CdTe thin films by the stacked elemental layer method. Compound formation and physical properties

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, L.R. [Departamento de Engenharia, Macanica e de Materiais, Instituto Militar de Engenharia, Praca General Tiburcio, 80, Urca, 22290-270 RJ Rio de Janeiro (Brazil); Matson, R. [National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO (United States); De Avillez, R.R. [Pontificia Universidade Catolica, Rua Marques de Sao Vicente, 225, Gavea, 22543-900 RJ Rio de Janeiro (Brazil)

    2001-01-01

    Cadmium telluride (CdTe) thin films have been deposited using the stacked elemental layer (SEL) technique. This process consists of sequentially depositing tellurium and cadmium layers and then annealing the stacks in order to synthesize the compound. The films were characterized using X-ray diffraction (XRD), optical transmittance and reflectance, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The evolution of the thin film reaction and compound formation were studied using X-ray data. The results show that the growth is diffusion-controlled and the activation energy is (82{+-}2) kJ/mol. The effect of the conventional post-synthesis CdCl{sub 2} heat treatment on the physical properties of the films produced is also reported.

  7. Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

    International Nuclear Information System (INIS)

    Steinberger, Hartmut

    1998-01-01

    This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

  8. Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition.

    Science.gov (United States)

    Jiang, Xishun; Zhang, Miao; Shi, Shiwei; He, Gang; Song, Xueping; Sun, Zhaoqi

    2014-01-01

    Cuprous oxide (Cu2O) thin films were prepared by using electrodeposition technique at different applied potentials (-0.1, -0.3, -0.5, -0.7, and -0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV-vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.

  9. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

    Directory of Open Access Journals (Sweden)

    Miguel Muñoz Rojo

    2015-08-01

    Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

  10. Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Abuin, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Mascaraque, A., E-mail: arantzazu.mascaraque@fis.ucm.es [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Gonzalez-Barrio, M.A. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Perez, L. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Instituto de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Bi films on GaAs substrates with different orientations. Black-Right-Pointing-Pointer Ultra thin films - 50 nm - are continuous and smooth. Black-Right-Pointing-Pointer Bi always grows with (0 1 L) orientations. Black-Right-Pointing-Pointer Epitaxial growth onto As terminated surfaces. Black-Right-Pointing-Pointer Proposed model based on structural and chemical considerations. - Abstract: We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. {omega}-2{theta} X-ray diffraction scans only show reflections that can be indexed as (0 1 L), meaning that Bi grows onto GaAs only in combinations of the (0 0 1) and (0 1 0) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(1 1 0) and GaAs(1 1 1)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

  11. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mohammed Ali Al-Sammarraie

    2017-01-01

    Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

  12. Watching mesoporous metal films grow during templated electrodeposition with in situ SAXS.

    Science.gov (United States)

    Richardson, S J; Burton, M R; Luo, X; Staniec, P A; Nandhakumar, I S; Terrill, N J; Elliott, J M; Squires, A M

    2017-07-27

    In this paper, we monitor the real-time growth of mesoporous platinum during electrodeposition using small-angle X-ray scattering (SAXS). Previously, we have demonstrated that platinum films featuring the 'single diamond' (Fd3m) morphology can be produced from 'double diamond' (Pn3m) lipid cubic phase templates; the difference in symmetry provides additional scattering signals unique to the metal. Taking advantage of this, we present simultaneous in situ SAXS/electrochemical measurement as the platinum nanostructures grow within the lipid template. This measurement allows us to correlate the nanostructure appearance with the deposition current density and to monitor the evolution of the orientational and lateral ordering of the lipid and platinum during deposition and after template removal. In other periodic metal nanomaterials deposited within any of the normal topology liquid crystal, mesoporous silica or block copolymer templates previously published, the template and emerging metal have the same symmetry, so such a study has not been possible previously.

  13. Roughness development in electrodeposited soft magnetic CoNiFe films in the presence of organic additives

    Directory of Open Access Journals (Sweden)

    STEVE RIEMER

    2003-05-01

    Full Text Available The effects of three additives, sodium lauryl sulfate (NaLS, saccharin (Sacc, and NaLS + Sacc, on roughness development during the electrodeposition of CoNiFe films were investigated. The characterization of these films by atomic force microscopy shows that the electrodeposits produced from NaLS containing solution result in a rough surface. The role of NaLS surfactant is to change the interfacial tension and clean non-polar species like hydrogen bubbles from the surface. In Sacc containing solution, the evolution of a smooth surface is controlled by adsorbed Sacc molecule at the interface. The kinetic roughening of these deposits was investigated by dynamic scaling analysis. It was demonstrated that the roughness of CoNiFe films, obtained in the presence of NaLS + Sacc additives, was also dependent on current density, roughness of substrate, and the temperature of plating bath.

  14. Preparation and characterization of CdSe0.6Te0.4 thin films by electrodeposition method

    International Nuclear Information System (INIS)

    Shinde, S.K.; Thombare, J.V.; Lohar, G.M.; Chougale, U.M.; Fulari, V.J.

    2012-01-01

    The electrodeposition method has been used to deposit CdSe 0.6 Te 0.4 thin film onto stainless steel and ITO coated glass substrates. CdSe 0.6 Te 0.4 thin films have been electrodeposited from an acidic bath using CdSO 4 as a cadmium source, SeO 2 as a selenium source and Na 2 TeO 3 as a telluride source at pH ∼ 3 onto stainless steel and ITO coated glass substrates. The preparative conditions such as concentration, pH, deposition time, deposition potential, etc. are optimized to get CdSe 0.6 Te 0.4 thin films. These films were characterized by X-ray diffraction (XRD) study for structural analysis; Fourier transform infrared (FTIR) spectroscopy was used to study the different bonding. Optical absorption measurements were showed that the electrodeposited thin films are in semiconductor nature. The surface wettability study was made by contact angle measurements. (author)

  15. The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films

    Directory of Open Access Journals (Sweden)

    G.S. Khrypunov

    2017-07-01

    Full Text Available To create technology for preparation of CdS and CdTe thin films by direct current magnetron sputtering, the influence of physical and technological condensation modes on the crystal structure and optical properties of these films were investigated. The laboratory method of DC magnetron sputtering with preheating of the target for the mentioned films on glass substrates was developed. We obtained the CdS layers with hexagonal structure 150…200 nm thick under conditions when the plasma discharge current density was 1.1 mA/cm2 and the deposition rate – 30…40 nm/min. The bandgap in the obtained CdS films is Eg = 2.38…2.41 eV. After annealing in vacuum, the optical transparence of CdS films reaches 80…90%, which allows to use these films as a transparent window layer in solar cells based on heterojunctions of CdS/CdTe. When the plasma discharge current density is 2.2…5.4 mA/cm2 and the deposition rate is 200 nm/min, we obtained CdTe layers with hexagonal structure up to 5 µm thick. The transmittance of CdTe films with hexagonal structure in the wavelength range of the visible spectrum is up to 5%, and in the infrared spectral range is about 60%. The bandgap in the obtained CdTe layers of different thickness is 1.52…1.54 eV. After chloride treatment as a result of the phase transition wurtzite–sphalerite, the investigated CdTe films contain only the stable cubic structure and can be used as a base layer of solar cells.

  16. Electrical and magnetic properties of electrodeposited nickel incorporated diamond-like carbon thin films

    Science.gov (United States)

    Pandey, B.; Das, D.; Kar, A. K.

    2015-05-01

    Nanocomposite diamond-like carbon (DLC) thin films have been synthesized by incorporating nickel (Ni) nanoparticles in DLC matrix with varying concentration of nickel. DLC and Ni-DLC thin films have been deposited on ITO coated glass substrates employing low voltage electrodeposition method. Electrical properties of the samples were studied by measuring current-voltage characteristics and dielectric properties. The current approaches toward an ohmic behavior with metal addition. This tendency of increasing ohmicity is enhanced with increase in dilution of the electrolyte. The conductivity increases with Ni addition and interestingly it continues to increase with dilution of Ni concentration in the electrolyte in the range of our study. Magnetic properties for DLC and Ni-DLC thin film samples were examined by electron paramagnetic resonance (EPR) measurements and Super Conducting Quantum Interference Device (SQUID) measurements. g-Value for DLC is 2.074, whereas it decreases to 2.055 with Ni addition in the electrolyte. This decrement arises from the increased sp2 content in DLC matrix. The magnetic moment vs. magnetic field (m-H) curves of Ni-DLC indicate superparamagnetic behavior which may be due to ferromagnetic contribution from the incorporated nickel nanoparticles in the DLC matrix. The ZFC curve of Ni-DLC after the blocking temperature shows a combined contribution of ferromagnetic, superparamagnetic and paramagnetic nature of the materials persisting up to 300 K.

  17. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    Science.gov (United States)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  18. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Directory of Open Access Journals (Sweden)

    Simelys Hernández

    2016-04-01

    Full Text Available Manganese oxides (MnOx, being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs. This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water. To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  19. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts.

    Science.gov (United States)

    Hernández, Simelys; Ottone, Carminna; Varetti, Sara; Fontana, Marco; Pugliese, Diego; Saracco, Guido; Bonelli, Barbara; Armandi, Marco

    2016-04-19

    Manganese oxides (MnO x ), being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs). This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC) films of commercial Mn₂O₃, Mn₃O₄ and MnO₂ powders. Spin coating consists of few preparation steps and employs green chemicals ( i.e. , ethanol, acetic acid, polyethylene oxide and water). To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnO x films were also prepared by means of electrodeposition (ED) and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn₂O₃-based films, since Mn (III) species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO₂-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn₂O₃ crystalline phase. Electrochemical impedance spectroscopy (EIS) measurements were performed to study both electrode charge transport properties and electrode-electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn₂O₃ SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  20. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Science.gov (United States)

    Hernández, Simelys; Ottone, Carminna; Varetti, Sara; Fontana, Marco; Pugliese, Diego; Saracco, Guido; Bonelli, Barbara; Armandi, Marco

    2016-01-01

    Manganese oxides (MnOx), being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs). This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC) films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water). To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED) and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III) species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS) measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders. PMID:28773419

  1. Mössbauer study of the field induced uniaxial anisotropy in electro-deposited FeCo alloy films

    International Nuclear Information System (INIS)

    Zhi-Wei, Li; Xu, Yang; Hai-Bo, Wang; Xin, Liu; Fa-Shen, Li

    2009-01-01

    Thin ferromagnetic films with in-plane magnetic anisotropy are promising materials for obtaining high microwave permeability. The paper reports a Mössbauer study of the field induced in-plane uniaxial anisotropy in electro-deposited FeCo alloy films. The FeCo alloy films were prepared by the electro-deposition method with and without an external magnetic field applied parallel to the film plane during deposition. Vibrating sample magnetometry and Mössbauer spectroscopy measurements at room temperature indicate that the film deposited in external field shows an in-plane uniaxial anisotropy with an easy direction coinciding with the external field direction and a hard direction perpendicular to the field direction, whereas the film deposited without external field does not show any in-plane anisotropy. Mössbauer spectra taken in three geometric arrangements show that the magnetic moments are almost constrained in the film plane for the film deposited with applied magnetic field. Also, the magnetic moments tend to align in the direction of the applied external magnetic field during deposition, indicating that the observed anisotropy should be attributed to directional ordering of atomic pairs. (atomic and molecular physics)

  2. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  3. Ballistic magnetoresistance of electrodeposited nanocontacts in thin film and micrometer wire gaps

    International Nuclear Information System (INIS)

    Garcia, N.; Cheng, H.; Wang, H.; Nikolic, N.D.; Guerrero, C.A.; Papageorgopoulos, A.C.

    2004-01-01

    In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in magnetic nanocontacts electrodeposited in thin films and micrometer gaps. We report the influence of magnetostriction in the measurements under different configurations and substrates, as well as the contribution of the magnetic material forming the contacts. To avoid the magnetostriction effect, we have fabricated magnetic nanocontacts in Cu wires and Cu films. Similar BMR results can be observed in these systems. Our results show that the BMR effect should depend on the microproperties of the nanocontacts and should not be related with the macroproperties of the electrodes. The magnetostriction results, measured by an atomic force microscopy system with a built-in electromagnet, clearly show that there is no direct relationship between the displacement (caused by the magnetostriction effect) and the value of BMR. In fact, we present large magnetoresistance values for permalloy, coinciding with displacements in the latter's structure less than 1 nm, which is the smallest clearly observable shift allowed by our atomic force microscope. Repetitions of hundreds of R(H) curves are presented for different materials with different coercive fields. The interpretation of the results is based on the formation of an interfacial transparent layer (non-stoichiometric oxide, sulfur, etc.) at the nanocontact where the theory can explain large magnetoresistance values

  4. Corrosion resistance and long-term durability of super-hydrophobic nickel film prepared by electrodeposition process

    International Nuclear Information System (INIS)

    Khorsand, S.; Raeissi, K.; Ashrafizadeh, F.

    2014-01-01

    A super-hydrophobic nickel film with micro-nano structure was successfully fabricated by electrodeposition process. By controlling electrodeposition parameters and considering different storage times for the coatings in air, various nickel films with different wettability were fabricated. Surface morphology of nickel films was examined by means of scanning electron microscopy (SEM). The results showed that the micro-nano nickel film was well-crystallized and exhibited pine cone-like microstructure with nano-cone arrays randomly dispersed on each micro-protrusion. The wettability of the micro-nano nickel film varied from super-hydrophilicity (water contact angle 5.3°) to super-hydrophobicity (water contact angle 155.7°) by exposing the surface in air at room temperature. The corrosion resistance of the super-hydrophobic film was estimated by electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The potentiodynamic curves revealed that the corrosion rate of superhydrophobic surface was only 0.16% of the bare copper substrate. Moreover, EIS measurements and appropriate equivalent circuit models revealed that the corrosion resistance of nickel films considerably improved with an increase in the hydrophobicity. The superhydrophobic surface also exhibited an excellent long-term durability in neutral 3.5 wt.% NaCl solution.

  5. Comparison of Microstructural and Morphological Properties of Electrodeposited Fe-Cu Thin Films with Low and High Fe : Cu Ratio

    Directory of Open Access Journals (Sweden)

    Umut Sarac

    2013-01-01

    Full Text Available Fe-Cu films with low and high Fe : Cu ratio have been produced from the electrolytes with different Fe ion concentrations at a constant deposition potential of −1400 mV versus saturated calomel electrode (SCE by electrodeposition technique onto indium tin oxide (ITO coated conducting glass substrates. It was observed that the variation of Fe ion concentration in the electrolyte had a very strong influence on the compositional, surface morphological, and microstructural properties of the Fe-Cu films. An increase in the Fe ion concentration within the plating bath increased the Fe content, consequently Fe : Cu ratio within the films. The crystallographic structure analysis showed that the Fe-Cu films had a mixture of face-centered cubic (fcc Cu and body centered cubic (bcc α-Fe phases. The average crystallite size decreased with the Fe ion concentration. The film electrodeposited from the electrolyte with low Fe ion concentration exhibited a morphology consisting of dendritic structures. However, the film morphology changed from dendritic structure to cauliflower-like structure at high Fe ion concentration. The surface roughness and grain size were found to decrease significantly with increasing Fe ion concentration in the electrolyte. The significant differences observed in the microstructural and morphological properties caused by the change of Fe ion concentration in the electrolyte were ascribed to the change of Fe : Cu ratio within the films.

  6. Study of the electrodeposition of rhenium thin films by electrochemical quartz microbalance and X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Schrebler, R.; Cury, P.; Suarez, C.; Munoz, E.; Vera, F.; Cordova, R.; Gomez, H.; Ramos-Barrado, J.R.; Leinen, D.; Dalchiele, E.A.

    2005-01-01

    Rhenium thin films were prepared by electrodeposition from an aqueous solution containing 0.1 M Na 2 SO 4 +H 2 SO 4 , pH 2 in presence of y mM HReO 4 . As substrates polycrystalline gold (y=0.75 mM HReO 4 ) and monocrystalline n-Si(100) (y=40 mM HReO 4 ) were used. The electrochemical growth of rhenium was studied by cyclic voltammetry and electrochemical quartz microbalance on gold electrodes. The results found in the potential region before the hydrogen evolution reaction (her) showed that ReO 3 , ReO 2 and Re 2 O 3 with different hydration grades can be formed. In the potential region where the her is occurring, either on gold or n-Si(100) the electrodeposition of metallic rhenium takes place. On both substrates, rhenium films were formed by electrolysis at constant potential and X-ray photoelectron spectroscopy technique was used to characterise these deposits. It was concluded that the electrodeposited films were of metallic rhenium and only the uppermost atomic layer contained rhenium oxide species

  7. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  8. Surfactant-Assisted Electrodeposition of CoFe-Barium Hexaferrite Nanocomposite Thin Films

    Directory of Open Access Journals (Sweden)

    Soheila Kharratian Khameneh

    2014-06-01

    Full Text Available The influences of anionic sodium dodecylsulfate (SDS and cationic Hexadecyltrimethylammonium bromide (HTAB surfactants on the incorporation and distribution of barium hexaferrite nanoparticles in the electrodeposited CoFe-BaFe12O19 composite thin films were studied. Sulphate bathes with natural pH containing 0 to 2 g/L surfactants were used for electroplating at room temperature. Field emission scanning electron microscopy (FE-SEM and energy dispersive spectroscopy (EDS from the surface of the deposited films, together with X-ray diffraction analysis were applied to confirm codeposition of the iron and cobalt, as well as incorporation of the nanoparticles. The results showed that the amounts of hexaferrite particles in the deposits were initially increased by increasing the concentrations of both surfactants in the electrolyte and reduced by further additions of the surfactants. The optimum values of surfactants were 1 and 0.5 g/L for SDS and HTAB, respectively. The highest amount of the barium hexaferrite in the deposits was 12 wt% which was achieved by using an electrolyte containing 0.5 g/L HTAB surfactant. Composition of the film’s matrix was also changed by varying the amounts of the surfactants. The variation of the iron content of the film’s matrix appeared to follow a trend similar to that of the amount of the particle’s incorporation. The films deposited from electrolytes containing HTAB showed coarser morphologies compared to those obtained from bathes without surfactant or containing SDS.

  9. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

    Science.gov (United States)

    Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

    2018-04-01

    The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

  11. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, O., E-mail: oscar@fmc.uva.es [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Hortelano, V.; Jimenez, J. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Plaza, J.L.; Dios, S. de; Olvera, J.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Fath, R.; Lozano, J.G.; Ben, T.; Gonzalez, D. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica y Q.I., Facultad de Ciencias, Apdo. 40, 11510 Puerto Real, Cadiz (Spain); Mass, J. [Dpto. de Fisica, Universidad del Norte, Km.5 Via Puerto Colombia, Barranquilla (Colombia)

    2011-04-28

    Research highlights: > ZnO nanowires grown from thermal Zn oxidation. > TEM reveals high quality thin nanowires several microns long. > New phase formation at long oxidation time. > Good spectroscopic properties measured by Raman, Photo and Cathodoluminsecence spectroscopies. - Abstract: <112-bar 0> wurtzite ZnO nanowires (NWs) have been obtained by oxidizing in air at 500 deg. C thermally evaporated Zn metal films deposited onto CdTe substrates. The presence of Cd atoms from the substrate on the ZnO seeding layer and NWs seems to affect the growth of the NWs. The effects of the oxidation time on the structural and optical properties of the NWs are described in detail. It is shown that the NWs density decreases and their length increases when increasing the oxidation time. Thicker Zn layers result in thinner and longer ZnO NWs. Very long oxidation times also lead to the formation of a new CdO phase which is related to the partial destruction and quality reduction of the NWs. The possible process for ZnO NW formation on CdTe substrates is discussed.

  12. Functionalization of super-aligned carbon nanotube film using hydrogen peroxide solution and its application in copper electrodeposition.

    Science.gov (United States)

    Xiong, Lunqiao; Shuai, Jing; Hou, Zecheng; Zhu, Lin; Li, Wenzhen

    2017-07-15

    In order to make super-aligned carbon nanotubes (SACNT) homogeneously spread in electrolytes, a swift and effective method was devised for surface functionalization of SACNT film by ohmic heating using hydrogen peroxide solution. Controllable generation of defects and notable graft of oxygen functional groups on the sidewall of SACNTs were induced as proven by X-ray photoelectron spectroscopy and Raman spectroscopy. Differently from the harsh wet chemical oxidation, the super-aligned morphology and structural integrity of carbon nanotubes in the SACNT film were found to be well preserved by electron microscopy analysis. The functionalized treatment can remove extraneous material contaminating SACNT film and improve its conductivity. The grafting of polar ionizable groups has been proved to effectively eliminate the agglomeration of SACNTs. When the oxidized SACNT film was used as host material for electrodeposition of copper, the composite film of well-bonded SACNTs and Cu was successfully prepared. Copyright © 2017 Elsevier Inc. All rights reserved.

  13. Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

    International Nuclear Information System (INIS)

    Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

    2012-01-01

    A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

  14. Electro-deposition of Co-La alloy films in urea melt and their performances

    Energy Technology Data Exchange (ETDEWEB)

    Wang Senlin [Department of Applied Chemistry, College of Materials Science and Engineering, Huaqiao University, Quanzhou 362021 (China)], E-mail: slwang@hqu.edu.cn; Lin Jibei; Cai Qiuyan; Zhang Yan [Department of Applied Chemistry, College of Materials Science and Engineering, Huaqiao University, Quanzhou 362021 (China)

    2008-02-14

    The Co-La alloy film was electro-deposited in urea melt. The co-deposition behavior, the effect of the cathodic current density on the composition and the surface morphology of the coating were examined, respectively. As a result, lanthanum is co-deposited with cobalt to form Co-La alloy under the inducement effect of cobalt. With the increase of the cathodic current density, La content of the deposit rises at first, then decreases, and reaches a maximal value at the current density of 30 mA cm{sup -2}. Meanwhile, the size of the coating particles becomes small. The more content of Co in the deposit is, the more the saturation magnetization is. The crystallization behavior of the coating was studied by using the differential scanning calorimetry and the X-ray diffraction. The as-plated deposit consists of main amorphous phase and a little amount of hexagon cobalt phase (P6{sub 3}/mmc). The amorphous phase was converted into Co-La (Fm3m) phase at 438.9 deg. C, and hexagon cobalt phase was crystallized into cubic cobalt at 687.1 deg. C. The electro-catalytic activity of the hydrogen evolution for the Co-La alloy was studied by using electrochemical experiments. The results showed that the electro-catalytic activity of the hydrogen evolution of the alloy is better than that of cobalt.

  15. The influence of electrochemical pre-treatment of B-doped diamond films on the electrodeposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Mauro C.; Silva, Leide G. da; Sumodjo, Paulo T.A. [Sao Paulo Univ., SP (Brazil). Inst. de Quimica]. E-mail: ptasumod@iq.usp.br

    2006-08-15

    The influence of the substrate electrochemical pre-treatment in 0.5 mol L{sup -1} H{sub 2}SO{sub 4} on the Pt electrodeposition on boron-doped diamond, BDD, film electrodes was investigated. Platinum cannot be electrodeposited on a freshly prepared BDD electrode; however, potentiodynamic cycling or anodic potential steps at short times does activate the electrode. Anodic pre-treatment plays a dual role in the behavior of Pt deposition on BDD surfaces: Pt deposition is increased at short-term anodic pre-treatments, whereas at longer pre-treatment times Pt deposition was inhibited. These facts are explained in terms of wettability changes and passivation of the surface. Conversely, the oxide layer formed in these treatments increases the dispersion level of the catalyst. (author)

  16. Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In2S3 Films for Solar Applications Using the Taguchi Method

    Directory of Open Access Journals (Sweden)

    Maqsood Ali Mughal

    2014-01-01

    Full Text Available Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3 films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3 films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2 obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27 (3^4 design of experiments (DOE. Approximately 600 nm thick In2S3 films were electrodeposited from an organic bath (ethylene glycol-based containing indium chloride (InCl3, sodium chloride (NaCl, and sodium thiosulfate (Na2S2O3·5H2O, the latter used as an additional sulfur source along with elemental sulfur (S. An X-ray diffractometer (XRD, energy dispersive X-ray spectroscopy (EDS unit, and scanning electron microscope (SEM were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3 films.

  17. Multilayer solar cells based on CdTe grown from nitrate precursor

    Science.gov (United States)

    Salim, Hussein I.

    This thesis presents the research and development of low-cost multilayer graded-bandgap solar cells based on electrodeposited CdTe. The electronic quality layers used in this research are electrodeposited CdS and CdTe and chemical bath deposited (CBD) CdS. In the literature, the electrodeposition of CdS layers has been mainly reported using sodium thiosulphate (Na2S2O3), ammonium thiosulphate (NH4)2S2O3 and thioacetamide (C2H5NS) as the precursor for sulphur ions. The major disadvantages of these precursors are the precipitation of elemental S and CdS particles in the solution during growth which can affect the quality of the deposited thin films. Electrodeposition of the CdS from acidic and aqueous solutions using thiourea (SC(NH2)2) precursor has been able to overcome this disadvantage. No visible precipitations of elemental S or CdS particles were observed in the deposition electrolyte showing a stable bath during the growth.Also, in the literature, the CdTe thin films have been mainly electrodeposited using CdSO4 as the precursor for Cd ions whereas in this thesis the electrodeposition of the CdTe thin films were carried out comprehensively using cadmium nitrate Cd(NO3)2 as the precursor for Cd ions. Reports are scarce on the electrodeposition of CdS and CdTe thin films history using thiourea and nitrate precursors. Using these precursors, the CdS and CdTe have been successfully electrodeposited from aqueous solution on glass/fluorine-doped tin oxide (FTO) substrates, using simplified two-electrode system instead of the conventional three-electrode system. Also, the CBD-CdS thin films have been successfully grown from aqueous solution on glass/FTO substrates.The electrodeposited and chemical bath deposited materials were characterised for their structural, compositional, morphological, optical, electrical and defect properties using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray diffraction (EDX), scanning electron microscopy (SEM), atomic

  18. High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.

    2002-05-01

    In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.

  19. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    Science.gov (United States)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  20. Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

    Directory of Open Access Journals (Sweden)

    TSUNG-WEI CHANG

    2014-02-01

    Full Text Available In this study, copper indium selenide (CIS films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM, X-ray Diffraction (XRD, and Raman spectra.

  1. Effect of different nickel precursors on capacitive behavior of electrodeposited NiO thin films

    Science.gov (United States)

    Kore, R. M.; Ghadge, T. S.; Ambare, R. C.; Lokhande, B. J.

    2016-04-01

    In the present study, the effect of nickel precursors containing different anions like nitrate, chloride and sulphate on the morphology and pseudocapacitance behavior of NiO is investigated. The NiO samples were prepared by using a potentiondynamic electrodeposition technique in the three electrode cell. Cyclic voltammetry technique was exploited for potentiodynamic deposition of the films. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), etc. The XRD reveals the cubic crystal structure for all samples. The SEM micrograph shows nanoflakelike, up grown nanoflakes and honeycomb like nanostructured morphologies for nitrate, chloride and sulphate precursors respectively. The capacitive behavior of these samples was recorded using cyclic voltammetry (CV), charge-discharge and electrochemical impedance spectroscopy (EIS) in 1 M KOH electrolyte. The specific capacitance values of NiO samples obtained using CV for nitrate, chloride and sulphate precursors were 136, 214 and 893 Fg-1 respectively, at the scan rate of 5 mVs-1. The charge discharge study shows high specific energy for the sample obtained from sulphate (23.98 Whkg-1) as compared to chloride (9.67 Whkg-1) and nitrate (4.9 Whkg-1), whereas samples of cholride (13.9 kWkg-1 and nitrate (10.5 kWkg-1) shows comparatively more specific power than samples obtained from sulphate (7.6 kWkg-1). The equivalent series resistance of NiO samples observed from EIS study are 1.34, 1.29 and 1.27 Ω respectively for nitrate, chloride and sulphate precursors. These results emphasizes that the samples obtained from sulphate precursors provides very low impedance through honeycomb like nanostructured morphology which supports good capacitive behavior of NiO.

  2. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A. [Departamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco C.P. 44430 (Mexico); Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, D.F., C.P. 11801 (Mexico); Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O. [Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, D. F. C.P. 07360 (Mexico); Hernández-Hernández, A. [Escuela Superior de Apan, Universidad Autónoma del Estado de Hidalgo, Calle Ejido de Chimalpa Tlalayote s/n Colonia Chimalpa, Apan Hidalgo (Mexico); Moure-Flores, F. de [Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro C.P. 76010 (Mexico)

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  4. Electrodeposition of polymer electrolyte in nanostructured electrodes for enhanced electrochemical performance of thin-film Li-ion microbatteries

    Science.gov (United States)

    Salian, Girish D.; Lebouin, Chrystelle; Demoulin, A.; Lepihin, M. S.; Maria, S.; Galeyeva, A. K.; Kurbatov, A. P.; Djenizian, Thierry

    2017-02-01

    We report that electrodeposition of polymer electrolyte in nanostructured electrodes has a strong influence on the electrochemical properties of thin-film Li-ion microbatteries. Electropolymerization of PMMA-PEG (polymethyl methacrylate-polyethylene glycol) was carried out on both the anode (self-supported titania nanotubes) and the cathode (porous LiNi0.5Mn1.5O4) by cyclic voltammetry and the resulting electrode-electrolyte interface was examined by scanning electron microscopy. The electrochemical characterizations performed by galvanostatic experiments reveal that the capacity values obtained at different C-rates are doubled when the electrodes are completely filled by the polymer electrolyte.

  5. Toward Cost-Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High-Quality Si Films in a CaCl2-based Molten Salt.

    Science.gov (United States)

    Yang, Xiao; Ji, Li; Zou, Xingli; Lim, Taeho; Zhao, Ji; Yu, Edward T; Bard, Allen J

    2017-11-20

    Electrodeposition of Si films from a Si-containing electrolyte is a cost-effective approach for the manufacturing of solar cells. Proposals relying on fluoride-based molten salts have suffered from low product quality due to difficulties in impurity control. Here we demonstrate the successful electrodeposition of high-quality Si films from a CaCl 2 -based molten salt. Soluble Si IV -O anions generated from solid SiO 2 are electrodeposited onto a graphite substrate to form a dense film of crystalline Si. Impurities in the deposited Si film are controlled at low concentrations (both B and P are less than 1 ppm). In the photoelectrochemical measurements, the film shows p-type semiconductor character and large photocurrent. A p-n junction fabricated from the deposited Si film exhibits clear photovoltaic effects. This study represents the first step to the ultimate goal of developing a cost-effective manufacturing process for Si solar cells based on electrodeposition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G. (The University of Toledo)

    2001-08-29

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62 {angstrom} or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to {mu}c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a

  7. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000; ANNUAL

    International Nuclear Information System (INIS)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2001-01-01

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62(angstrom) or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to(mu)c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a triple

  8. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    Science.gov (United States)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  9. Electrodeposition nucleation and film formation of cadmium from a low melting molten salt

    Science.gov (United States)

    Agarwal, Rajev

    Consider the simple electrodeposition reaction of a metal: Mz+ + ze- M (at the cathode of the base metal)Whereby metal ions, Mz+, are reduced to metal atoms, M, at the interface of the base metal and electrolyte. The occurrence of such an electrode reaction does not guarantee the nucleation of M or the formation of a compact film of metal M on the base metal. In cases where deposition does occur, metal crystals are formed at fixed sites on the base metal. These metal crystals grow into a polycrystalline film. In this work, this concept of metal deposition is studied. The studies were carried out on cadmium using nickel as a base metal and purified chloroaluminate molten salt electrolyte under purified helium. Cadmium is typically electroplated from aqueous electrolytes. Therefore, the first part of this work consisted of developing an electroplating process for the deposition of this metal from a molten salt electrolyte. This consisted of selection of an electrolyte, cadmium salt, base metal, and experimental proof of cadmium deposition in the selected system. The second part consisted of identification of the cadmium electrode reactions in the chloroaluminate molten salt electrolyte using cyclic voltammetry. When cadmium chloride was added to the chloroaluminate melt, the divalent salt dissolved to form a mixture of divalent and subvalent ions of cadmium in the electrolyte. During cathodic potential scans, these cadmium ions produced two reduction peaks. The first cathodic peak was from reduction of divalent ions to subvalent ions, and the second peak from reduction of subvalent ions to cadmium metal. During anodic potential scans, two oxidation peaks were produced due to reverse reactions of cadmium ions and metal. In addition, a third pair of cadmium peaks was noted to form between the two bulk pairs of cadmium peaks. This third pair of peaks was from chemical dissociation of subvalent ions to divalent ions and cadmium, and coupled electrochemical reactions of

  10. Synthesis of porous NiS thin films on Ni foam substrate via an electrodeposition route and its application in lithium-ion batteries

    International Nuclear Information System (INIS)

    Ruan, Hongcheng; Li, Yafeng; Qiu, Heyuan; Wei, Mingdeng

    2014-01-01

    Graphical abstract: The porous NiS thin films on Ni foam substrate were fabricated for the first time by an electrodeposition route and then used directly as an anode for lithium-ion batteries, which exhibited larger capacity and good cycle stability. -- Highlights: • The porous NiS on Ni foam substrate were fabricated by an electrodeposition route. • NiS/Ni thin films were used as the electrode material in lithium-ion batteries. • The cell fabricated by NiS/Ni exhibited larger capacity and good cycle stability. -- Abstract: Electrodeposition, a convenient approach, has been used for fabricating porous NiS thin films on Ni foam substrate. The obtained NiS/Ni thin films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and energy dispersive spectrometry. Furthermore, the electrodeposited NiS/Ni thin films were first used as the anode for lithium-ion intercalation and exhibited large capacities and good cycling stability

  11. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    International Nuclear Information System (INIS)

    Yang, Xiaoyan; Liu, Bo; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Highlights: • Novel CdS/CdSe composite windows for CdTe cell were prepared by pulsed laser deposition. • SEM images show that CdS/CdSe composite windows are stacking together as the design. • CdTe cells with CdS/CdSe composite windows improved the blue response. • CdTe cells with composite windows show an obvious red shift in the absorption edge. • The volume proportion of CdSe affects the performance of CdTe solar cell. - Abstract: A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with V OC of 772.92 mV, J SC of 25.11 mA/cm 2 and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  12. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Xiaoyan; Liu, Bo; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-03-30

    Highlights: • Novel CdS/CdSe composite windows for CdTe cell were prepared by pulsed laser deposition. • SEM images show that CdS/CdSe composite windows are stacking together as the design. • CdTe cells with CdS/CdSe composite windows improved the blue response. • CdTe cells with composite windows show an obvious red shift in the absorption edge. • The volume proportion of CdSe affects the performance of CdTe solar cell. - Abstract: A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with V{sub OC} of 772.92 mV, J{sub SC} of 25.11 mA/cm{sup 2} and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  13. Structural, optical and electrical properties of CeO2 thin films simultaneously prepared by anodic and cathodic electrodeposition

    Science.gov (United States)

    Yang, Yumeng; Du, Xiaoqing; Yi, Chenxi; Liu, Jiao; Zhu, Benfeng; Zhang, Zhao

    2018-05-01

    CeO2 thin films were deposited on stainless steel (SS) and indium tin oxide (ITO)-coated glass by simultaneous anodic and cathodic electrodeposition, and the influence of negative potential on the formation of ceria films was studied with scanning electron microscopy, X-ray diffraction, Raman spectroscopy, van der Pauw measurements, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that CeO2 films on the anode are slightly affected by the potential, but the particle size, crystal orientation, strain, film thickness, resistivity and Ce(III) content of the films on the cathode increases with increasing potential on the SS substrate. Contradictory to the results of the SS cathode, redshift (Ed changed from 3.95 eV to 3.56 eV and Ei changed from 3.42 eV to 3.04 eV) occurring in the absorption spectrum of CeO2 deposited on the ITO-coated glass cathode indicates that the content of Ce3+ in the cathodic films is dependent on the adopted substrates and decreases as the applied potential is increased.

  14. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  15. Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

    International Nuclear Information System (INIS)

    Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

    2016-01-01

    The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

  16. The influence of pH and bath composition on the properties of Fe-Co alloy film electrodeposition

    International Nuclear Information System (INIS)

    Qiang Chengwen; Xu Jincheng; Xiao Songtao; Jiao Yongjie; Zhang Zhongquan; Liu Ying; Tian Liangliang; Zhou Zhigang

    2010-01-01

    Fe-Co films were electrodeposited on ITO glass substrates from the electrolytes with different molar ratio of Co 2+ /Fe 2+ and different pH values (2.1, 2.9, 3.7, and 4.3) at 25 deg. C. The properties of Fe-Co alloy films depend on both Co 2+ and Fe 2+ concentrations in electrolyte and pH values was studied. The content of Co increases from 40% to 85% as the mole ratio of CoSO 4 /FeSO 4 increasing from 0.50/0.50 to 0.90/0.10 in electrolyte and slightly decreases from 77% to 63% as the pH values increasing from 2.1 to 4.3. The X-ray diffraction analysis reveals that the structures of the films strongly depend on the Co content in the binary films. The surface morphologies of the films are influenced by the combined action of composition and phase structure. The saturation magnetization reaches a maximum value of 2974.03 emu/cm 3 and coercivity reaches a minimum value of 42.72 Oe of the Fe 0.30 Co 0.70 . The saturation magnetization reaches a maximum values of 2974.03 emu/cm 3 and coercivity reaches a minimum values of 42.72 Oe of the Fe 0.30 Co 0.70 at pH = 2.9.

  17. Electrodeposition of In{sub 2}O{sub 3} thin films from a dimethylsulfoxide based electrolytic solution

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, R.; Munoz, E.; Gomez, H. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Curauma Valparaiso (Chile); Dalchiele, E.A.; Marotti, R.E. [Instituto de Fisica and CINQUIFIMA, Facultad de Ingenieria, Montevideo (Uruguay); Martin, F.; Leinen, D.; Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie, Departamento de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga (Spain)

    2013-02-15

    Indium (III) oxide (In{sub 2}O{sub 3}) thin films have been obtained after heat treatment of In(OH){sub 3} precursor layers grown by a potential cycling electrodeposition (PCED) method from a dimethylsulfoxide (DMSO) based electrolytic solution onto fluorine-doped tin oxide (FTO) coated glass substrates. X-ray diffraction (XRD) measurements indicate the formation of a polycrystalline In{sub 2}O{sub 3} phase with a cubic structure. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed a smooth morphology of the In{sub 2}O{sub 3} thin films after an optimized heat treatment had been developed. The surface composition and chemical state of the semiconductor films was established by X-ray photoelectron spectroscopy analysis. The nature of the semiconductor material, flat band potential and donor density were determined from Mott-Schottky plots. This study reveals that the In{sub 2}O{sub 3} films exhibited n-type conductivity with an average donor density of 2.2 x 10{sup 17} cm{sup -3}. The optical characteristics were determined through transmittance spectra. The direct and indirect band gap values obtained are according to the accepted values for the In{sub 2}O{sub 3} films of 2.83 and 3.54 eV for the indirect and direct band gap values. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    International Nuclear Information System (INIS)

    Luo Xinze; Xu Lin; Xu Bingbing; Li Fengyan

    2011-01-01

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO 3 ) 2 , TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 μA cm -2 , a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  19. Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

    Science.gov (United States)

    Rahal, Hassiba; Kihal, Rafiaa; Affoune, Abed Mohamed; Ghers, Mokhtar; Djazi, Faycal

    2017-06-01

    Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 °C. The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.60 V vs. SCE and characterized by XRD, SEM, FTIR, optical, photoelectrochemical and electrical measurements. Thickness of the deposited film was measured to be 357 nm. X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along (002) plane. FTIR results confirmed the presence of ZnO films at peak 558 cm-1. SEM images showed uniform, compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape. Optical properties of ZnO reveal a high optical transmission (> 80 % ) and high absorption coefficient (α > {10}5 {{cm}}-1) in visible region. The optical energy band gap was found to be 3.28 eV. Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction. Electrical properties of ZnO films showed a low electrical resistivity of 6.54 {{Ω }}\\cdot {cm}, carrier concentration of -1.3× {10}17 {{cm}}-3 and mobility of 7.35 cm2 V-1 s-1. Project supported by the Algerian Ministry of Higher Education and Scientific Research, Algeria (No. J0101520090018).

  20. Preparation of n- and p-InP films by PH{sub 3} treatment of electrodeposited In layers

    Energy Technology Data Exchange (ETDEWEB)

    Cattarin, S.; Musiani, M. [C.N.R., Padova (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Casellato, U.; Rossetto, G. [C.N.R., Padova (Italy). Istituto di Chimica e Tecnologie Inorganische e dei Materiali Avanzati; Razzini, G. [Politecnico di Milano (Italy). Dipt. di Chimica Fisica Applicata; Decker, F.; Scrosati, B. [Univ. La Sapienza, Roma (Italy). Dipt. di Chimica

    1995-04-01

    InP is among the few semiconducting materials with the potential for excellence in several applications, including solar energy conversion. Thin InP layers have been prepared by electrodeposition of In films on Ti substrates (ca. 2 mg/cm{sup 2} of In) and their annealing in PH{sub 3} flow. The obtained material, characterized by scanning electron microscopy-energy dispersive X-ray analysis and X-ray diffraction techniques, shows uneven substrate coverage but good crystallinity. Photoelectrochemical investigations in acidic polyiodide medium show significant n-type photoactivity for the samples prepared from a nominally pure In layer. A p-type photoactivity is obtained depositing a small amount of Zn on top of the In layer prior to annealing. Results are compared with those obtained preparing InP layers on Ti by a conventional metallorganic chemical vapor deposition technique.

  1. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    International Nuclear Information System (INIS)

    Zsurzsa, S.; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H c ) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H c =H co +a/d n with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H c ) and magnetoresistance. • H c depends on Co layer thickness according to H c =H co +a/d n with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  2. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  3. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    Science.gov (United States)

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L.; Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-03-24

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  4. On the carrier transport in metal-insulator-metal structures for CdTe thin film

    International Nuclear Information System (INIS)

    Choi, K.W.; Choi, C.K.

    1982-01-01

    According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the Alsup(+) and Agsup(+) electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film. (Author)

  5. Elucidating PID Degradation Mechanisms and In Situ Dark I–V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve; Terwilliger, Kent; VanSant, Kaitlyn; Kempe, Michael; Wohlgemuth, John; Kurtz, Sarah; Olsson, Anders; Propst, Michelle

    2016-11-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

  6. Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

    International Nuclear Information System (INIS)

    Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

    2012-01-01

    Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  7. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-01-01

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm 2 at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe 2 O 3 ) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the

  8. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Zhu, Tao; Yong, Siek-Ting [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chan, Eng Seng [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia)

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  9. Novel patterning of CdS / CdTe thin film with back contacts for ...

    Indian Academy of Sciences (India)

    Murugaiya Sridar Ilango

    2018-03-12

    Mar 12, 2018 ... Patterning of solar cell; thin film; back contact; e-beam lithography. PACS Nos 68.55.–a; 85.40.Hp. 1. Introduction ... So the performance of back contact solar cell is to be tested along with the increased junction area .... 3.1 Descriptive analysis of nanotextured solar cells. The nanopatterned cells have 500 ...

  10. A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

    Science.gov (United States)

    Mughal, Maqsood Ali

    Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath

  11. Characterization and corrosion resistance of anodic electrodeposited titanium oxide/phosphate films on Ti-20Nb-10Zr-5Ta bioalloy

    Energy Technology Data Exchange (ETDEWEB)

    Popa, Monica; Vasilescu, Cora; Drob, Silviu I.; Osiceanu, Petre; Anastasescu, Mihai; Calderon-Moreno, Jose M., E-mail: josecalderonmoreno@yahoo.com [Institute of Physical Chemistry ' Ilie Murgulescu' of the Romanian Academy, Bucharest (Romania)

    2013-07-15

    In this work, the anodic galvanostatic electrodeposition of an oxidation film containing phosphates on Ti-20Nb-10Zr-5Ta alloy from orthophosphoric acid solution is presented. Its composition was determined by X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman micro-spectroscopy, and its topography by atomic force microscopy (AFM). The corrosion resistance of the coated alloy in simulated human fluid (by linear polarization method and monitoring of open circuit potentials, corresponding open circuit potential gradients) as well as the characterization of the coating (by Raman spectroscopy and depth profile X-ray photoelectron spectroscopy (XPS)) deposited in a period of 300 h soaking in simulated human body fluid were studied. The electrodeposited film was composed of amorphous titanium dioxide and contained phosphate groups. The corrosion resistance of the coated Ti-20Nb-10Zr-5Ta alloy in neutral and alkaline Ringer's solutions was higher than that of the bare alloy due to the protective properties of the electrodeposited film. The corrosion parameters improved over time as result of the thickening of the surface film by the deposition from the physiological solution. The deposited coating presented a variable composition in depth: at the deeper layer nucleated nanocrystalline hydroxyapatite and at the outer layer amorphous calcium phosphate. (author)

  12. Preparation of thin films, with base to precursor materials of type Cu-In-Se elaborated by electrodeposition for the solar cells elaboration

    International Nuclear Information System (INIS)

    Fernandez, A.M.

    1999-01-01

    Thin films of chalcogenide compounds are promising because they have excellent optoelectronic characteristics to be applied in solar cells. In particular, CuInSe 2 and Cd Te thin films have shown high solar to electrical conversion efficiency. However, this efficiency is limited by the method of preparation, in this case, physical vapor deposition techniques are used. In order to increase the area of deposition t is necessary to use chemical methods, for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. These precursors were used to build solar cells with 7.9 % of efficiency. (Author)

  13. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Subcontract Report, September 2004--September 2005

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2006-04-01

    Specific overall objectives of this subcontract are improvement in baseline field performance of manufactured CdTe PV modules while reducing environmental, health and safety risk in the manufacturing environment. Project objectives focus on four broad categories: (1) development of advanced front-contact window layers, (2) improved semiconductor film deposition, (3) development of improved accelerated life test procedures that indicate baseline field performance, and (4) reduction of cadmium-related environmental, health and safety risks. First Solar has significantly increased manufacturing capacity from less than 2 MW/yr to more than 20 MW/yr, while increasing the average module total-area power conversion efficiency from 7% to >9%. First Solar currently manufactures and sells 50-65-W thin-film CdTe PV modules at a rate of about 1.9 MW/month. Sales backlog (booked sales less current inventory divided by production rate) is more than a year. First Solar is currently building new facilities and installing additional equipment to increase production capacity by 50 MW/yr; the additional capacity is expected to come on line in the third quarter of 2006.

  14. Effect of coating current density on the wettability of electrodeposited copper thin film on aluminum substrate

    Directory of Open Access Journals (Sweden)

    Arun Augustin

    2016-09-01

    Full Text Available Copper is the only one solid metal registered by the US Environmental Protection Agency as an antimicrobial touch surface. In touch surface applications, wettability of the surface has high significance. The killing rate of the harmful microbes depends on the wetting of pathogenic solution. Compared to the bulk copper, coated one on aluminum has the advantage of economic competitiveness and the possibility of manufacturing complex shapes. In the present work, the copper coating on the aluminum surface has successfully carried out by electrodeposition using non cyanide alkaline bath. To ensure good adhesion strength, the substrate has been pre-zincated prior to copper deposition. The coating current density is one of the important parameters which determine the nucleation density of the copper on the substrate. To understand the effect of current density on wettability, the coating has done at different current densities in the range of 3 A dm−2 to 9 A dm−2 for fixed time interval. The grain size has been measured from TEM micrographs and showed that as current density increases, grain size reduces from 62 nm to 35 nm. Since the grain size reduces, grain boundary volume has increases. As a result the value of strain energy (calculated by Williamson–Hall method has increased. The density of nodular morphology observed in SEM analysis has been increased with coating current density. Further, wettability studies with respect to double distilled water on the electrodeposited copper coatings which are coated at different current densities are carried out. At higher current density the coating is more wettable by water because at these conditions grain size of the coating decreases and morphology of grain changes to a favorable dense nodularity.

  15. Electrodeposited Pd-Ni-Mo film as a cathode material for hydrogen evolution reaction

    International Nuclear Information System (INIS)

    Tang, Junlei; Zhao, Xuhui; Zuo, Yu; Ju, Pengfei; Tang, Yuming

    2015-01-01

    A Pd-Ni-Mo film was prepared on stainless steel substrate as a novel electrode material for hydrogen evolution reaction catalysis. The surface micro-morphology, chemical composition and microstructure of the Pd-Ni-Mo film were characterizated with SEM, EDS, XPS and TEM. The obtained film is a multiple phase ternary alloy containing crystallines and amorphous phases. The electrochemical measurements showed that the Pd-Ni-Mo film has excellent catalytic activity for hydrogen evolution reaction with good corrosion resistance in 1 M NaOH solution. The proton discharge electrosorption is the rate determining step of hydrogen evolution reaction on Pd-Ni-Mo film surface. The better electrocatalysis performance of the Pd-Ni-Mo film is attributed to its larger real surface as well as the enhanced electrochemical activity of the film surface due to the alloying effect

  16. The rapid prototyping of textured amorphous surfaces for the graphoepitaxial deposition of CdTe films using focused ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Neretina, S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Hughes, R.A. [McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Stortz, G.; Mascher, P. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Preston, J.S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada)

    2011-02-15

    Cadmium telluride films deposited on amorphous substrates exhibit a grain structure characterized by [111]-oriented grains, but where the in-plane grain orientation is randomized due to the absence of epitaxy. Here, we explore the viability of promoting an in-plane grain alignment through graphoepitaxy. Fifteen different substrate surface textures were fabricated using focused ion beam lithography. This approach allows for the side-by-side deposition of surface textures where both the areal extent and depth of the surface features are varied in a systematic manner. CdTe films deposited overtop these textures show grain structures with dramatic variations, revealing that particular length scales have the most pronounced effect on the grain structure. (orig.)

  17. DC electric and photoelectric measurements of CdTe thin films in Schottky-barrier cells

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, S

    2004-06-15

    Measurements of the temperature dependence of ohmic and space-charge-limited (SCL) currents on thin films of polycrystalline particles of cadmium telluride in Schottky-junction cells have been carried out in air ambient. These cells showed rectification where p-CdTe material was flanked between an ohmic contact (Au) and a blocking contact (Al). At low voltages, the dark current in the forward direction which corresponds to negative potential at the Al electrode varies exponentially with voltage. At higher voltages, two distinct regions of ohmic and SCL conduction limited by a discrete trapping level are determined. Traps with a density of 3.85x10{sup 22} m{sup -3} located at 0.58 eV above the valence band edge have been observed. The thickness dependence in the square-law region has been found to confirm the d{sup -3} law. Values of conversion efficiency as high as 11.3% and open-circuit voltage of 0.77 V have been evaluated from the photo-measurements of J-V characteristic at input power density of 100 mW cm{sup -2}. Space-charge concentrations and barrier heights have been estimated from the capacitance-voltage (C-V) measurements both in dark and under constant illumination. The linearity of the C{sup -2}-V dependence is associated with a homogenous distribution of the impurities inside the space-charge region.

  18. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules: Final Technical Report, April 1998 - October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D. H.; Powell, R. C.

    2002-04-01

    This report describes the significant progress made in four areas of this subcontract: process and equipment development; efficiency improvement; characterization and analysis; and environmental, health, and safety. As part of the process and equipment development effort, vapor-transport deposition (VTD) was implemented first on a 60-cm-web pilot-production system, then on a 120-cm-web high-throughput coater. Deposition of CdS and CdTe films at a throughput of 3 m2/min was demonstrated, and more than 56,000 plates (each 0.72 m2) were coated -- 16 times the total number coated prior to the start of the contract. Progress was also made in the conversion efficiency and yield of both standard and next-generation modules, with data from more than 3000 sequentially deposited modules having an average total-area conversion efficiency of 7% and next-generation modules produced with efficiency as high as 9.3% (10.15% aperture-area efficiency as measured by NREL). Successful implementation o f in-situ CdS thickness measurements was important to progress in thickness uniformity and control. Net CdTe material utilization of 82% was demonstrated. The ability to raise the utilization further was shown with the demonstration of inherent CdS and CdTe material utilizations of over 90%. Post-CdTe-deposition process development, which included process space exploration and problem diagnosis, was an important part of advances in efficiency and yield. As part of the efficiency-improvement task, research was done on cells and modules with reduced CdS thickness to increase photocurrent.

  19. Investigation of gallium redistribution processes during Cu(In,Ga)Se2 absorber formation from electrodeposited/annealed oxide precursor films

    International Nuclear Information System (INIS)

    Sidali, T.; Duchatelet, A.; Chassaing, E.; Lincot, D.

    2015-01-01

    A way to prepare metallic precursors for CuIn 1−x ,Ga x Se 2 (CIGS) solar cells has been recently introduced leading to efficiencies above 12.4%. It consists in the electrodeposition of Cu-In-Ga mixed oxides in an acidic nitrate aqueous solution followed by thermal reduction and selenization. This paper investigates, in a first part, the nucleation and growth mechanisms taking place during the co-electrodeposition of Cu-In-Ga oxide/hydroxide film. Scanning Electron Microscope observations coupled to Energy Dispersive X-ray spectrometry point out that the deposition is initiated by the formation of metallic copper nuclei. These nuclei enable the growth of Cu-In-Ga oxide film. This observation confirms that freshly deposited copper catalyzes nitrate reduction leading to an increase in the surface pH enabling the precipitation of the Cu-In-Ga hydroxides. In a second part, precursor films were elaborated with increasing Ga(NO 3 ) 3 concentration. After reduction of the films in hydrogen and selenization heat treatments, X-ray diffraction analysis shows the incorporation of Ga into the CIGS phase with increasing Ga content in the optimal composition range for photovoltaic applications (x = 0.25-0.34). Gallium composition profiles are evidenced in the films with a tendency to higher concentration near the Mo surface. Increasing annealing temperature allows a better homogenization of Ga in the film. The consequences are correlated to optoelectronic measurements (Eg and cell efficiency) with bandgap measurement and cell efficiencies (10 to 12%). - Highlights: • Electrodeposition starts with copper nucleation. • Gallium content in the precursor is tuned by Ga(III) concentration. • Increasing selenization temperature promotes Ga homogenization in CIGS

  20. Deformation and fracture in micro-tensile tests of freestanding electrodeposited nickel thin films

    International Nuclear Information System (INIS)

    Yang, Y.; Yao, N.; Soboyejo, W.O.; Tarquinio, C.

    2008-01-01

    In situ scanning electron microscopy micro-tensile tests were conducted on freestanding LIGA nickel thin films of two thicknesses (70 and 270 μm). The deformation and fracture mechanisms were elucidated by in situ scanning electron microscopy imaging and ex situ fractographic analysis. Due to the film microstructural gradient, an apparent thickness effect on the film yield strengths was observed, which was then rationalized with a continuum micromechanics model

  1. Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

    International Nuclear Information System (INIS)

    Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

    2014-01-01

    Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

  2. Polycrystalline thin-film technology: Recent progress in photovoltaics

    Science.gov (United States)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  3. Correlation between physical properties and growth mechanism of In2S3 thin films fabricated by electrodeposition technique with different deposition times

    Science.gov (United States)

    Braiek, Zied; Gannouni, Mounir; Ben Assaker, Ibtissem; Bardaoui, Afrah; Lamouchi, Amina; Brayek, A.; Chtourou, Radhouane

    2015-10-01

    Indium sulfide (In2S3) thin films were grown on ITO-coated glass substrate using the electrodeposition method. The effect of the deposition time on the structural, morphological, optical and electrical properties of the as-grown In2S3 thin films was studied. XRD spectra of the obtained films reveal the polycrystalline nature of (β-In2S3) with a tetragonal crystal structure along the (109) plane, and exhibit a sharp transition to the (0012) plane when the deposition time is extended beyond 20 min. Using atomic force microscope (AFM), the surface morphology shows a remarkable change in the grain size, thickness, and surface roughness when varying the deposition time. UV-VIS spectrophotometer show that the optical band gap values of In2S3 decrease from about 2.82 to 1.93 eV by extending the electrodeposition duration from 5 to 20 min. All films were found to have an n-type character with a lower electrical resistivity of about 1.8×10-3 Ω cm for films deposited at 20 min.

  4. One-step electrodeposition of a molecularly imprinting chitosan/phenyltrimethoxysilane/AuNPs hybrid film and its application in the selective determination of p-nitrophenol.

    Science.gov (United States)

    Li, Shanshan; Du, Dan; Huang, Jing; Tu, Haiyang; Yang, Yuqi; Zhang, Aidong

    2013-05-07

    This paper presents the fabrication of a molecularly imprinting sol-gel hybrid film by the one-step electrodeposition of the constitutional individuals including chitosan (CS), phenyltrimethoxysilane (PTMS), in situ formed gold nanoparticles (AuNPs) and template p-nitrophenol (p-NP). The electrodeposition was triggered by applying an optimal potential at -0.30 V vs. SCE, leading to the formation of the p-NP imprinting CS/PTMS/AuNPs hybrid film on a glassy carbon electrode (GCE) with a roughly architectural and conductive nature, as revealed by scanning electron microscopy and electrochemical impedance analysis. The mechanism of the hybrid film formation was discussed accordingly. Upon complete removal of the template molecules assisted by cyclic voltammetry, the p-NP imprinted film modified electrode exhibited differential pulse voltammetric (DPV) responses to p-NP in a linear range from 3.0 × 10(-8) to 3.5 × 10(-4) M with a detection limit of 5.0 × 10(-9) M. The selectivity and reusability of the sensor was demonstrated by discriminating the p-NP response from its analogues and successive rebinding/debinding cycles, respectively. The methodology is extendable as a simple and general platform for developing hybrid film sensors for the specific determination of various electrochemically active species.

  5. Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

    Science.gov (United States)

    Lai, T.; Potter, B. G.; Simmons-Potter, K.

    2017-08-01

    Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

  6. Pseudocapacitive performance of electrodeposited porous Co3O4 film on electrophoretically modified graphite electrodes with carbon nanotubes

    Science.gov (United States)

    Kazazi, Mahdi; Sedighi, Ali Reza; Mokhtari, Mohammad Amin

    2018-05-01

    A facile and efficient two-step procedure was developed for the fabrication of a high-performance and binder-free cobalt oxide-carbon nanotubes (CO/CNT) pseudocapacitive electrode. First, CNTs were deposited on the surface of a chemically activated graphite sheet by cathodic electrophoretic deposition technique from their ethanolic suspension. In the next step, a thin film of cobalt oxide was electrodeposited on the CNTs coated graphite substrate by a galvanostatic method, followed by a thermal treatment in air. The structure and morphology of the prepared cobaltite electrode with and without CNT interlayer were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and nitrogen adsorption-desorption measurement. The results indicated that Co3O4 nanoparticles were uniformly attached on the surface of CNTs, to form a porous-structured CO/CNT composite electrode with a high specific surface area of 144.9 m2 g-1. Owing to the superior electrical conductivity of CNTs, high surface area and open porous structure, and improved integrity of the electrode structure, the composite electrode delivered a high areal capacitance of 4.96F cm-2 at a current density of 2 mA cm-2, a superior rate performance (64.7% capacitance retention from 2 mA cm-2 to 50 mA cm-2), as well as excellent cycling stability (91.8% capacitance retention after 2000 cycles), which are higher than those of the pure cobaltite electrode.

  7. Investigation of a Cu/Pd Bimetallic System Electrodeposited on Boron-Doped Diamond Films for Application in Electrocatalytic Reduction of Nitrate

    Directory of Open Access Journals (Sweden)

    Jorge T. Matsushima

    2012-01-01

    Full Text Available The Cu/Pd bimetallic system electrodeposited on boron-doped diamond (BDD films for application, as electrode material in the electrochemical reduction of nitrate was studied. The electrochemical behavior of Cu, Pd, and Cu/Pd bimetallic system was evaluated by cyclic voltammetry. From these results, the formation of the Cu/Pd composite was verified. In addition, Cu with different phases and a Cu/Pd phase in the composite were obtained. Morphological analysis by scanning electron microscopy (SEM revealed a homogeneous distribution of Cu/Pd bimetallic particles with intermediary dimensions compared to those observed in Cu or Pd electrodeposits separately. These composites were tested as electrocatalysts for nitrate reduction in Britton-Robinson buffer solution (pH 9. Electrochemical measurements showed that composites with higher Cu content displayed the best electrocatalytic activity for nitrate reduction, and the Cu/Pd phase in the bimetallic system served to improve the Cu adherence on BDD electrode.

  8. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  9. Photoelectrochemistry of copper(I) acetylide films electrodeposited onto copper electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zotti, G.; Cattarin, S.; Mengoli, G.; Fleischmann, M.; Peter, L.M.

    1986-01-01

    Films of copper acetylide (Cu/sub 2/C/sub 2/) were grown electrochemically on copper and characterized by transmittance and reflectance techniques. The photoelectrochemical properties of the filmed electrodes in alkaline solution indicate that Cu/sub 2/C/sub 2/ behaves as a p-type semiconducting material (1.5 eV band gap). The photocurrents depend on film thickness and aging and high resistivity or recombination losses limit the quantum yield to some 4% for thicknesses of practical importance (250 nm).

  10. Electrodeposition and characterization of CdSe x-Te 1- x semiconducting thin films

    Science.gov (United States)

    Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

    1999-07-01

    Thin polycrystalline films of cadmium chalcogenides CdSe xTe 1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe xTe 1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

  11. Electrodeposited Mesoporous ZnO Thin Films as Efficient Photocatalysts for the degradation of dye pollutants

    Czech Academy of Sciences Publication Activity Database

    Pauporté, T.; Rathouský, Jiří

    2007-01-01

    Roč. 111, č. 21 (2007), s. 7639-7644 ISSN 1932-7447 Institutional research plan: CEZ:AV0Z40400503 Keywords : ZnO films * photocatalysis * pollutants Subject RIV: CF - Physical ; Theoretical Chemistry

  12. Optimization of the front contact to minimize short-circuit current losses in CdTe thin-film solar cells

    Science.gov (United States)

    Kephart, Jason Michael

    With a growing population and rising standard of living, the world is in need of clean sources of energy at low cost in order to meet both economic and environmental needs. Solar energy is an abundant resource which is fundamentally adequate to meet all human energy needs. Photovoltaics are an attractive way to safely convert this energy to electricity with little to no noise, moving parts, water, or arable land. Currently, thin-film photovoltaic modules based on cadmium telluride are a low-cost solution with multiple GW/year commercial production, but have lower conversion efficiency than the dominant technology, crystalline silicon. Increasing the conversion efficiency of these panels through optimization of the electronic and optical structure of the cell can further lower the cost of these modules. The front contact of the CdTe thin-film solar cell is critical to device efficiency for three important reasons: it must transmit light to the CdTe absorber to be collected, it must form a reasonably passive interface and serve as a growth template for the CdTe, and it must allow electrons to be extracted from the CdTe. The current standard window layer material, cadmium sulfide, has a low bandgap of 2.4 eV which can block over 20% of available light from being converted to mobile charge carriers. Reducing the thickness of this layer or replacing it with a higher-bandgap material can provide a commensurate increase in device efficiency. When the CdS window is made thinner, a degradation in electronic quality of the device is observed with a reduction in open-circuit voltage and fill factor. One commonly used method to enable a thinner optimum CdS thickness is a high-resistance transparent (HRT) layer between the transparent conducting oxide electrode and window layer. The function of this layer has not been fully explained in the literature, and existing hypotheses center on the existence of pinholes in the window layer which are not consistent with observed results

  13. Low cost chemical oxygen demand sensor based on electrodeposited nano-copper film

    Directory of Open Access Journals (Sweden)

    Hamdy H. Hassan

    2018-02-01

    Full Text Available A commercially available copper electrical cable and pure Cu disk were used as substrates for the electrodeposition of copper nanoparticles (nano-Cu. The surface morphology of the prepared nano-Cu/Cu electrodes was investigated by scanning electron microscope (SEM and energy dispersive X-ray spectrometer (EDX. The bare copper substrates and the nano-copper modified electrodes were utilized and optimized for electrochemical assay of chemical oxygen demand (COD using glycine as a standard. A comparison was made among the four electrodes (i.e., bare and nano-Cu coated copper cable and pure copper disk as potential COD sensors. The oxidation behavior of glycine was investigated on the surface of the prepared sensors using linear sweep voltammetry (LSV. The results indicate significant enhancement of the electrochemical oxidation of glycine by the deposited nano-Cu. The effects of different deposition parameters, such as Cu2+ concentration, deposition potential, deposition time, pH, and scan rate on the response of the prepared sensors were investigated. Under optimized conditions, the optimal nano-Cu based COD sensor exhibited a linear range of 2–595 mg/L, lower limit of detection (LOD as low as 1.07 mg/L (S/N = 3. The developed method exhibited high tolerance level to Cl− ion where 1.0 M Cl− exhibited minimal influence. The sensor was utilized for the detection of COD in different real water samples. The results obtained were validated using the standard dichromate method.

  14. Electrodeposition Process and Performance of CuIn(Se x S1- x )2 Film for Absorption Layer of Thin-Film Solar Cells

    Science.gov (United States)

    Li, Libo; Yang, Xueying; Gao, Guanxiong; Wang, Wentao; You, Jun

    2017-11-01

    CuIn(Se x S1- x )2 thin film is prepared by the electrodeposition method for the absorption layer of the solar cell. The CuIn(Se x S1- x )2 films are characterized by cyclic voltammetry measurement for the reduction of copper, indium, selenium and sulfur in selenium and sulfur in aqueous solutions with sodium citrate and without sodium citrate. In the four cases, the defined reduction process for every single element is obtained and it is observed that sodium citrate changes the reduction potentials. A linear relationship between the current density of the reduction peak and (scan rate v)1/2 for copper and indium is achieved, indicating that the process is diffusion controlled. The diffusion coefficients of copper and indium ions are calculated. The diffusional coefficient D value of copper is higher than that of indium, and this is the reason why the deposition rate of copper is higher. When four elements are co-deposited in the aqueous solution with sodium citrate, the quaternary compound of CuIn(Se x S1- x )2 is deposited together with Cu3Se2 impure phases after annealing, as found by XRD spectra. Morphology is observed by SEM and AFM. The chemical state of the films components is analyzed by XPS. The UV-Visible spectrophotometer and electrochemistry workstation are employed to measure the photoelectric properties. The results show that the smooth, uniform and compact CuIn(Se x S1- x )2 film is a semiconductor with a band gap of 1.49 eV and a photovoltaic conversion efficiency of 0.45%.

  15. Investigation of Cu2SnSe3 preparation by simultaneous electrodeposition as precursor of Cu2ZnSnSe4 thin film solar cell

    Science.gov (United States)

    Gunawan, Haris, Abdul; Widodo, Didik Setiyo; Septina, Wilman; Ikeda, Shigeru

    2017-08-01

    Chalcogenide material of multinary metals are of interest in relation as optoelectronic devices such as laser and solar cell. Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of -0.6V vs. Ag/AgCl for 20 min. Annnealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 °C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 °C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Sn) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film.

  16. Platinum-coated gold nanoporous film surface: electrodeposition and enhanced electrocatalytic activity for methanol oxidation.

    Science.gov (United States)

    Jia, Jianbo; Cao, Linyuan; Wang, Zhenhui

    2008-06-03

    This report describes the preparation of Pt-nanoparticle-coated gold-nanoporous film (PGNF) on a gold substrate via a simple "green" approach. The gold electrode that has been anodized under a high potential of 5 V is reduced by freshly prepared ascorbic acid (AA) solution to obtain gold nanoporous film electrode. Then the Pt nanoparticle is grown on the electrode by cyclic voltammetry (CV). The resulting PGNF electrode has highly ordered arrangement and large surface area, as verified by scanning electron microscopy (SEM) and CV, suggesting that the nanoporous gold film electrode provides a good matrix for obtaining PGNF with high surface area. Furthermore, the as-prepared PGNF electrode exhibited high electrocatalytic activity toward methanol oxidation in a 0.5 M H 2SO 4 solution containing 1.5 M methanol. The present novel strategy is expected to reduce the cost of the Pt catalyst remarkably.

  17. Multi-Walled Carbon Nanotube-Assisted Electrodeposition of Silver Dendrite Coating as a Catalytic Film

    Directory of Open Access Journals (Sweden)

    Li Fu

    2017-12-01

    Full Text Available A multi-walled carbon nanotube (MWCNT-coated indium tin oxide (ITO slide was used as a platform for the growth of a silver dendrite (Ag-D film using cyclic voltammetry. The particular dendritic nanostructures were formed by the diffusion-limited-aggregation model due to the potential difference between the MWCNTs and the ITO surface. The Ag-D-coated ITO film was then used for the catalytic degradation of methyl orange (MO and methylene blue (MB under static aqueous conditions. The network structure of the Ag-D allows the efficient diffusion of MO and MB, and consequently enhances the catalytic performance. Since the thin film is much easier to use for the post-treatment of powder catalysts, the proposed method shows great potential in many catalytic applications.

  18. Nanostructured Cu2O thin film electrodes prepared by electrodeposition for rechargeable lithium batteries

    International Nuclear Information System (INIS)

    Bijani, S.; Gabas, M.; Martinez, L.; Ramos-Barrado, J.R.; Morales, J.; Sanchez, L.

    2007-01-01

    Uniform films of Cu 2 O with thickness below 1 μm were prepared from a Cu(II) lactate solution. The deposits were compact and of high purity with the particle size varying from 60 to 400 nm. They were tested as electrodes in lithium batteries and their electrochemical response was consistent with the Cu 2 O + 2e - + 2Li + ↔ 2Cu + Li 2 O reaction. Nevertheless, the reversibility of this reaction was dependent on thickness. Kinetic factors associated with the poor electronic conductivity of Cu 2 O could account for the relevance of the influence of film thickness. The thinnest film, about 300 nm thick, exhibited the best electrochemical performance by sustaining a specific capacity as high as 350 Ah kg -1

  19. Oxidatively Electrodeposited Thin-Film Transition Metal (Oxy)hydroxides as Oxygen Evolution Catalysts.

    Science.gov (United States)

    Morales-Guio, Carlos G; Liardet, Laurent; Hu, Xile

    2016-07-20

    The electrolysis of water to produce hydrogen and oxygen is a simple and attractive approach to store renewable energies in the form of chemical fuels. The oxygen evolution reaction (OER) is a complex four-electron process that constitutes the most energy-inefficient step in water electrolysis. Here we describe a novel electrochemical method for the deposition of a family of thin-film transition metal (oxy)hydroxides as OER catalysts. The thin films have nanodomains of crystallinity with lattice spacing similar to those of double-layered hydroxides. The loadings of these thin-film catalysts were accurately determined with a resolution of below 1 μg cm(-2) using an electrochemical quartz microcrystal balance. The loading-activity relations for various catalysts were established using voltammetry and impedance spectroscopy. The thin-film catalysts have up to four types of loading-activity dependence due to film nucleation and growth as well as the resistance of the films. A zone of intrinsic activity has been identified for all of the catalysts where the mass-averaged activity remains constant while the loading is increased. According to their intrinsic activities, the metal oxides can be classified into three categories: NiOx, MnOx, and FeOx belong to category I, which is the least active; CoOx and CoNiOx belong to category II, which has medium activity; and FeNiOx, CoFeOx, and CoFeNiOx belong to category III, which is the most active. The high turnover frequencies of CoFeOx and CoFeNiOx at low overpotentials and the simple deposition method allow the fabrication of high-performance anode electrodes coated with these catalysts. In 1 M KOH and with the most active electrode, overpotentials as low as 240 and 270 mV are required to reach 10 and 100 mA cm(-2), respectively.

  20. Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

    Science.gov (United States)

    Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

    2017-11-01

    Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  1. Morphologically controlled electrodeposition of CdSe on mesoporous TiO2 film for quantum dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Song, Xiaohui; Wang, Minqiang; Zhang, Hao; Deng, Jianping; Yang, Zhi; Ran, Chenxin; Yao, Xi

    2013-01-01

    Highlights: • CdSe QDs were deposited onto mesoporous TiO 2 film via a one-step electrodeposition method. • The morphology and microstructure of TiO 2 /CdSe photoanodes can be controlled by electrodeposition current density. • A ZnS coating layer and thermal annealing could further enhance the performance of the TiO 2 /CdSe photoanodes. • A maximum power conversion efficiency of 2.72% was achieved with the optimum TiO 2 /CdSe/ZnS photoanodes. -- Abstract: CdSe quantum dots (QDs)-sensitized mesoporous TiO 2 (TiO 2 /CdSe) films were fabricated using a facile one-step electrodeposition method in an aqueous electrolyte. This technique has the advantage of being simple, low cost, and easily scalable to the sensitization of large-area panels. By adjusting the electrodeposition current density, the morphology and microstructure of the prepared TiO 2 /CdSe films can be precisely controlled, which influences the photovoltaic performances of quantum dot-sensitized solar cells based on the TiO 2 /CdSe films. At a moderate current density of 0.2 mA cm −2 , CdSe QDs can penetrate deep into the inner pores of the mesoporous TiO 2 film, thus leading to a dense and uniform distribution of QDs throughout the whole TiO 2 matrix, while higher current densities result in growth of larger, isolated CdSe nanoclusters. Furthermore, a ZnS passivation layer coated on TiO 2 /CdSe photoanodes and thermal annealing could significantly improve the photovoltaic performance. As a result, a quantum dot-sensitized solar cell based on a TiO 2 /CdSe/ZnS photoanode (350 °C, 30 min calcination), polysulfide electrolyte and Pt counter electrode achieves a power conversion efficiency of 2.72% under AM 1.5 G one sun illumination

  2. A study on electrodeposited NixFe1−x alloy films

    Indian Academy of Sciences (India)

    Several techniques such as X-ray diffraction [9], VSM. [10], Mössbauer spectroscopy [11], four-point probe [12] etc. are used to investigate the crystallographic, magnetic and magnetotransport properties of NiFe systems. In this study our aim is to prepare NiFe alloy films relatively thicker (in µm scale) than those reported in ...

  3. Electrodeposited MnO(x)/PEDOT Composite Thin Films for the Oxygen Reduction Reaction.

    Science.gov (United States)

    Vigil, Julian A; Lambert, Timothy N; Eldred, Kaitlyn

    2015-10-21

    Manganese oxide (MnOx) was anodically coelectrodeposited with poly(3,4-ethylenedioxythiophene) (PEDOT) from an aqueous solution of Mn(OAc)2, 3,4-ethylenedioxythiophene, LiClO4 and sodium dodecyl sulfate to yield a MnOx/PEDOT composite thin film. The MnOx/PEDOT film showed significant improvement over the MnOx only and PEDOT only films for the oxygen reduction reaction, with a >0.2 V decrease in onset and half-wave overpotential and >1.5 times increase in current density. Furthermore, the MnOx/PEDOT films were competitive with commercial benchmark 20% Pt/C, outperforming it in the half-wave ORR region and exhibiting better electrocatalytic selectivity for the oxygen reduction reaction upon methanol exposure. The high activity of the MnOx/PEDOT composite is attributed to synergistic charge transfer capabilities, attained by coelectrodepositing MnOx with a conductive polymer while simultaneously achieving intimate substrate contact.

  4. A study on electrodeposited NixFe1−x alloy films

    Indian Academy of Sciences (India)

    Positive and negative anisotropic magnetoresistance were observed in longitudinal and transverse geometries ... Different techniques may cause the films to have different structural and therefore different physical ... ions in the neighborhood of substrate may instantaneously change due to the anom- alous Fe deposition.

  5. Flexible polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  6. Structures and magnetic properties for electrodeposited Co ultrathin films on copper

    International Nuclear Information System (INIS)

    Mangen, T.; Bai, H.S.; Tsay, J.S.

    2010-01-01

    The formation of Co films on polycrystalline copper in diluted sulphuric acid was investigated by employing cyclic voltammetry (CV), atomic force microscopy, and in-situ magneto-optic Kerr effect (MOKE) techniques. By comparing CV measurements in the pure supporting electrolyte (11 mM K 2 SO 4 /1 mM H 2 SO 4 ) and the cobalt sulphate solution (10 mM K 2 SO 4 /1 mM H 2 SO 4 /1 mM CoSO 4 ), peaks from voltammetric cycling for copper dissolution, readsorption of dissolved copper ions, cobalt bulk dissolution and oxidation of hydrogen could be resolved. As the electroplating time increases, the size of the Co clusters increases and the deposition of Co corresponds to island growth. The first hysteresis loop occurs at a Co thickness of 0.33 nm in the longitudinal configuration. For films thinner than 7 nm, the Kerr intensity increases linearly because the Curie temperature of the film is well above 300 K.

  7. Effect of deposition and annealing parameters on the properties of electrodeposited CuIn1-xGa xSe2 thin films

    International Nuclear Information System (INIS)

    Bouabid, K.; Ihlal, A.; Manar, A.; Outzourhit, A.; Ameziane, E.L.

    2005-01-01

    CuIn 1-x Ga x Se 2 thin films were prepared by one step electrodeposition from reagents CuSO 4 , In 2 (SO 4 ) 3 , SeO 2 and Ga 2 (SO 4 ) 3 . The influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied. The structure, composition, morphology, optical and electrical properties of as-deposited and of annealed films were investigated. The X-ray diffraction analysis showed that the films annealed above 350 deg. C have a chalcopyrite structure of CuInSe 2 . The concentration of In 2 (SO 4 ) 3 affects the composition of In and Se in the films. The optical band gap of the films was varied between 1.01 and 1.26 eV by increasing the Ga content in the films. The electrical resistivity of CIS at room temperature decreased down to 10 Ω cm. The conduction mechanism in the CIS films was investigated in the temperature range 150 to 350 K

  8. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Christian Dunkel

    2014-04-01

    Full Text Available Well-ordered 3D mesoporous indium tin oxide (ITO films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs. Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene-b-poly(ethylene oxide block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.

  9. Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

    International Nuclear Information System (INIS)

    Garcia-Torres, Jose; Valles, Elisa; Gomez, Elvira

    2010-01-01

    The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR(H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

  10. High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

    International Nuclear Information System (INIS)

    Sandwisch, D.W.

    1999-01-01

    This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below$1.00/W

  11. Structural and optical properties of electrodeposited culnSe{sub 2} thin films for photovoltaic solar cells; Propiedades estructurales y opticas de laminas delgadas de CulnSe2 electrodepositadas para su aplicacion en celulas solares fotovoltaicas

    Energy Technology Data Exchange (ETDEWEB)

    Guillen, C.; Herrero, J.; Galiano, F.

    1990-07-01

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs.

  12. Optical and electrical characterization of CIGS thin films grown by electrodeposition route

    Science.gov (United States)

    Adel, Chihi; Fethi, Boujmil Mohamed; Brahim, Bessais

    2016-02-01

    In this paper, the electrochemical impedance spectroscopy was handled to study the electrochemical attitude of quaternary alloy Cu (In, Ga) Se2/Na2SO4 electrolyte interface. Subsequently, an annealing treatment was performed at various temperatures (250-400 °C). The material features of Cu (In, Ga) Se2 films are controlled by the percentage of gallium content. XRD studies showed three favorite orientations along the (112), (220), and (116) planes for all samples. The morphological and chemical composition studies exhibited Ga/(Ga + In) ratio ranging from 0.27 to 0.32, and RMS surface roughness was in the range 54.2-77.8 nm, respectively. The optical band gap energy of the CIGS alloys can be strongly controlled by adjusting gallium and indium concentrations. EIS measurement has been modeled by using an equivalent circuit. Mott-Schottky plot illustrates p-type conductivity of CIGS film with a carrier concentration around 1016 cm-3, a flat band potential V fb ranging from -0.68 to -0.57 V, and depletion layer thickness rises from 0.24 to 0.36 μm.

  13. Characterization of CdS thin films electrodeposited by an alternating current electrolysis method

    International Nuclear Information System (INIS)

    Fatas, E.; Herrasti, P.; Arjona, F.; Camarero, E.G.

    1986-01-01

    Conventional electrochemical methods of making CdS films are anodic oxidation of cadmium in a solution containing sulfide ions, and cathodic reduction from solutions containing soluble metal and sulfur compounds. In this paper a method is presented in which a CdS layer is deposited by a.c. electrolysis. The substrate is a glass plate covered by a layer of tin oxide. The electrolyte is an aqueous solution containing cadmium sulphate, ammonium sulphate, sodium thiosulphate, sodium chloride and glycerol. The applied a.c. voltages correspond to symmetrical and asymmetrical rectangular waves. During the electrolysis two electrodes are alternately connected to positive and negative potentials. As a result, Cd/sup 2+/ and S/sup 2-/ particles deposit at each electrode by turns, which results in the formation of a CdS layer

  14. Structural and magnetic properties of electrodeposited (Co/Co x Zn1-x ) n thin films

    International Nuclear Information System (INIS)

    El Bahraoui, T.; Errahmani, H.; Belghazi, Y.; Berrada, A.; Dinia, A.; Schmerber, G.; Lassri, H.; Cherkaoui El Moursli, F.; Hajji, F.

    2007-01-01

    We present the experimental results of (Co/Co x Zn 1- x ) n (with x≤6.5%) films grown from electrochemical dual bath based on (CoSO 4 .7H 2 O) and (ZnSO 4 .7H 2 O). X-ray diffraction patterns have shown the polycrystalline structure of CoZn layers with the structural lattice parameters close to those of the monoclinic CoZn 13 compound. With the interfacial effects we have explained the magnetization behaviour for the (Co/Co x Zn 1- x ) n multilayers. The atypical profile of the magnetic hysteresis curves indicates that our samples present two magnetic components with different anisotropy

  15. Electrodeposited nanostructured cobalt film and its dual modulation of both superhydrophobic property and adhesiveness

    Science.gov (United States)

    Xiao, Han; Hu, Anmin; Hang, Tao; Li, Ming

    2015-01-01

    We report a novel shell-like cobalt nanostructure prepared by galvanostatic electrochemical deposition which exhibit prominent superhydrophobic property. By adjusting the electroplating conditions, cobalt nanocrystals with different morphologies like nanocones and fluffy shells can be obtained while the hydrophobic and adhesive behavior of each after surface modification is observed. After a brief discussion on the growth mechanism of those shapes, we explained the lotus effect presented on such structures which would probably provide a strong evidence to the existing models of superhydrophobic surfaces. Based on the above, we propose a novel approach to modulate both adhesiveness and wettability of Co film by tuning of deposition parameters along with a simple heat treatment and dipping. With cobalt's anisotropic magnetic properties, such facile surface coating would be used in a wide range of applications such as commercial fabrication of tunable anti-corrosive magnetic devices.

  16. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Technical Report, September 2003-September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2004-12-01

    First Solar is actively commercializing CdTe-based thin-film photovoltaics. During the past year, major additions of production capability have been completed, as well as process improvements to achieve higher throughput and efficiency and greater durability. This report presents the results of Phase II of the subcontract, entitled ''Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed for high-volume manufacturing of high-efficiency modules, including exploration of large-area advanced front-contact window layers, improvements of the semiconductor deposition system, advancement in understanding of post-deposition processing steps and accelerated life testing methods, and progress in the environmental, health and safety programs. Work under this subcontract contributes to the overall manufacturing operation. During Phase II, average module efficiency (total area) on the production line was improved from 7.9% to 8.6% due primarily to process optimization. At the same, time production volume for commercial sales increased from 2.5 MW in 2003 to an estimated 6 MW in 2004. Much of the new 25 MW/yr production line has been qualified, and production volume is steadily increasing.

  17. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules Annual Technical Report, Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Powell, R.C.; Karpov, V.; Grecu, D.; Jayamaha, U.; Dorer, G.L. (First Solar, L.L.C.)

    2001-02-05

    Results and conclusions from Phase II of a three-year subcontract are presented. The subcontract, entitled Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules, is First Solar's portion of the Thin-Film Photovoltaic Partnership Program. The research effort of this subcontract is divided into four areas of effort: (1) process and equipment development, (2) efficiency improvement, (3) characterization and analysis, and (4) environmental, health, and safety. As part of the process and equipment development effort, a new semiconductor deposition system with a throughput of 3 m2/min was completed, and a production line in a new 75,000 ft2 facility was started and is near completion. As part of the efficiency-improvement task, research was done on cells and modules with thin CdS and buffer layers as way to increase photocurrent with no loss in the other photovoltaic characteristics. A number of activities were part of the characterization and analysis task, including developing a new admittance spectroscopy system, with a range of 0.001 Hz to 100 kHz, to characterize cells. As part of the environmental, health, and safety task, the methanol-based CdCl2 process was replaced with aqueous-CdCl2. This change enabled the retention of a De Minimus level of emissions for the manufacturing plant, so no permitting is required.

  18. Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

    KAUST Repository

    Islam, Md. Anisul

    2016-03-10

    In this study, Copper oxide thin films were deposited on copper plate by electrodeposition process in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH. Copper oxide films were electrodeposited at different pH and different concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher band gap than those deposited at higher bath concentration. The band gap of copper oxide films also significantly changes with pH of the bath solution. It was also observed that with the increase of the pH of bath solution band gap of copper oxide film decreased. © 2015 IEEE.

  19. Characterisation, corrosion resistance and in vitro bioactivity of manganese-doped hydroxyapatite films electrodeposited on titanium.

    Science.gov (United States)

    Huang, Yong; Ding, Qiongqiong; Han, Shuguang; Yan, Yajing; Pang, Xiaofeng

    2013-08-01

    This work elucidated the corrosion resistance and in vitro bioactivity of electroplated manganese-doped hydroxyapatite (MnHAp) film on NaOH-treated titanium (Ti). The NaOH treatment process was performed on Ti surface to enhance the adhesion of the MnHAp coating on Ti. Scanning electron microscopy images showed that the MnHAp coating had needle-like apatite crystals, and the approximately 10 μm thick layer was denser than HAp. Energy-dispersive X-ray spectroscopy analysis revealed that the MnHAp crystals were Ca-deficient and the Mn/P molar ratio was 0.048. X-ray diffraction confirmed the presence of single-phase MnHAp, which was aligned vertically to the substrate. Fourier transform infrared spectroscopy indicated the presence of phosphate bands ranging from 500 to 650 and 900 to 1,100 cm(-1), and a hydroxyl band at 3,571 cm(-1), which was characteristic of HAp. Bond strength test revealed that adhesion for the MnHAp coating was more enhanced than that of the HAp coating. Potentiodynamic polarisation test showed that the MnHAp-coated surface exhibited superior corrosion resistance over the HAp single-coated surface. Bioactivity test conducted by immersing the coatings in simulated body fluid showed that MnHAp coating can rapidly induce bone-like apatite nucleation and growth. Osteoblast cellular tests revealed that the MnHAp coating was better at improving the in vitro biocompatibility of Ti than the HAp coating.

  20. Electrodeposited Nanoporous versus Nanoparticulate ZnO Films of Similar Roughness for Dye-Sensitized Solar Cell Applications

    Czech Academy of Sciences Publication Activity Database

    Guerin, V. M.; Magne, C.; Pauporté, T.; Le Bahers, T.; Rathouský, Jiří

    2010-01-01

    Roč. 2, č. 12 (2010), s. 3677-3685 ISSN 1944-8244 Institutional research plan: CEZ:AV0Z40400503 Keywords : ZnO * dye sensitized solar cells * electrodeposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.925, year: 2010

  1. ELECTRODEPOSITION OF NICKEL ON URANIUM

    Science.gov (United States)

    Gray, A.G.

    1958-08-26

    A method is described for preparing uranium objects prior to nickel electroplating. The process consiats in treating the surface of the uranium with molten ferric chloride hexahydrate, at a slightiy elevated temperature. This treatment etches the metal surface providing a structure suitable for the application of adherent electrodeposits and at the same time plates the surface with a thin protective film of iron.

  2. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell and of low-cost/large-area module (Manufacture of high-reliability CdTe solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    The target is a low-cost CdS/CdTe solar cell of a large area (60cm times 90cm), the establishment of mass-production technologies for the cell, and the enhancement of production efficiency. A thin film formation technology of subjecting CdS film organic metal to pyrolysis is established, which reduces photoabsorption loss in the shortwave domain of wavelength of not longer than 500nm, reduces reflection loss in the film, and improves on short-circuit current density. Improvement is also achieved on CdTe film quality and junction quality by use of a proximity sublimation method in a vacuum, when a conversion rate of 16.0% (1cm{sup 2}) is attained which is the highest in the world. Based on the results of the above-said efforts, a 3.3mm-thick glass substrate is employed for CdTe film to develop into a 30cm times 60cm-large size, with the film thereon uniformly thick over a large area thanks to a normal pressure proximity sublimation method. Studies are made toward a process nearer to the ultimate product and, using the patterning technique, a 30cm times 60cm-large CdTe solar cell is tentatively built realizing a conversion rate of 9.8%. (NEDO)

  3. Electrodeposition of hierarchical ZnO/Cu{sub 2}O nanorod films for highly efficient visible-light-driven photocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ren, S. T.; Fan, G. H.; Liang, M. L.; Wang, Q. [Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Zhao, G. L., E-mail: zhaoguoliang@hit.edu.cn [School of Materials and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China)

    2014-02-14

    The development of high-performance visible-light-responsive photocatalytic materials has attracted widespread interest due to their potential applications in the environmental and energy industries. In this work, hierarchical ZnO nanorods films were successfully prepared on the stainless steel mesh substrates via a simple two-step seed-assisted electrodeposition route. Cu{sub 2}O nanoparticles were then electrodeposited on the surface of ZnO nanorods to form the core-shell heterostructure. The synthesized ZnO/Cu{sub 2}O nanocomposites were characterized by X-ray diffraction, field-emission scanning electron microscopy, and UV-visible spectrophotometer. Due to the branched hierarchical morphologies and core-shell structure, ZnO/Cu{sub 2}O nanomaterials show a prominent visible-light-driven photocatalytic performance under the low-intensity light irradiation (40 mW/cm{sup 2}). The influence of some experimental parameters, such as Cu{sub 2}O loading amount, ZnO morphologies, the substrate type, and the PH of the Cu{sub 2}O precursor solution on ZnO/Cu{sub 2}O photocatalytic performance was evaluated.

  4. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  5. Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.; Meyers, P. V.

    2004-02-01

    Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

  6. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

  7. Pulse electrodeposition of CoFe thin films covered with layered double hydroxides as a fast route to prepare enhanced catalysts for oxygen evolution reaction

    Science.gov (United States)

    Sakita, Alan M. P.; Noce, Rodrigo Della; Vallés, Elisa; Benedetti, Assis V.

    2018-03-01

    A novel, ultra-fast, and one-step method for obtaining an effective catalyst for oxygen evolution reaction is proposed. The procedure consists in direct electrodeposition, in a free-nitrate bath, of CoFe alloy films covered with layered double hydroxides (LDH), by potentiostatic mode, in continuous or pulsed regime. The catalyst is directly formed on glassy carbon substrates. The best-prepared catalyst material reveals a mixed morphology with granular and dendritic CoFe alloy covered with a sponge of CoFe-LDH containing a Cl interlayer. An overpotential of η10 mA = 286 mV, with a Tafel slope of 48 mV dec-1, is obtained for the OER which displays the enhanced properties of the catalyst. These improved results demonstrate the competitiveness and efficacy of our proposal for the production of OER catalysts.

  8. Preparation of electrodeposited cobalt nanowires

    Directory of Open Access Journals (Sweden)

    Valeska da Rocha Caffarena

    2006-06-01

    Full Text Available Nanostructured magnetic materials have great interest because of their applications in high-density magnetic information storage and for magnetic sensors. The electrodeposition of materials into porous alumina arrays is a suitable technique to produce nanomaterials, since highly ordered uniform nanomaterials can be obtained simply and cheaply. In this work, template-assisted Co nanowire arrays were prepared by electrodeposition into nanometer-sized pores of an alumite film using a two-electrode electrochemical cell. The Co nanowires were electrodeposited from a solution of 400 g/L of CoSO4.7H2O and 40 g/L of H3BO3. The morphology of the samples was investigated by means of TEM and AFM. The structural characteristic of the samples was examined using XRD, EDX and FTIR, which confirm the cobalt nanowire formation.

  9. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  10. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 1 technical report, March 14, 1995--March 13, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Sasala, R.; Powell, R.; Dorer, G. [Solar Cells, Inc., Toledo, OH (United States)

    1996-06-01

    Progress has been made in the important areas of stability, advanced deposition techniques, efficiency, the back contact, no-contact film diagnostics (photoluminescence) and Cd waste control. The progress in stability has been in both the demonstration of devices maintaining at least 90% of the initial efficiency for over 19,000 hours of continuous light soak and the development of methods which can accurately predict long term behavior based on the first 5,000--10,000 hours of life. Experiments were conducted to determine if device behavior could be accelerated with thermal or voltage stresses. Notable achievements in deposition technology include depositing CdTe on a 3,600 cm{sup 2} substrate at 600 torr and designing and fabricating a new deposition feed system with a remote semiconductor source. The efficiency has been increased on small area devices to 13.3% by decreasing the thickness of the CdS and of the glass substrate. Work also focused on using a high resistivity SnO{sub 2} buffer layer between the TCO and thin CdS to help preserve the open-circuit voltage while increasing the current-density. The back contacting process has been simplified by replacing the wet post-deposition etch with a vapor Te deposition step on small area devices. Results show that the devices perform comparably in efficiency but better in stability under light-soaking and open-circuit conditions. Preliminary studies of the correlation between CdS photoluminescence after the chloride treatment and the final device efficiency have shown a positive correlation which may be applicable for in-line quality control. The final area of progress was through the successful demonstration of preventing at least 99.9% of all incoming Cd from leaving in an uncontrolled manner through the land, air or water.

  11. Effect of iron content on the catalytic activity of Fe-MnOx electrodeposited films in water oxidation

    Science.gov (United States)

    Selinger, Elizabeth; Ryczko, Kevin; Lopinski, Gregory; Armandi, Marco; Bonelli, Barbara; Tamblyn, Isaac

    We report on the experimental and computational optimization and characterization of an MnOx structure containing a small amount of Fe, used as a catalyst for the water oxidation reaction (WOR), the key limiting reaction in water splitting. MnOx materials are earth-abundant and known to be efficient for WOR, and the method of cathodically electrodepositing catalysts allows for quick synthesis and a homogeneous coverage of the substrate. We present an increase in WOR activity due to the presence of Fe in this MnOx catalyst structure. First, we explored the optimal range for Fe(NO3)3 concentration in an KMnO4 solution for electrodeposition and tested for WOR activity. The catalyst structure was then analyzed using FESEM, XPS, and a Kelvin probe. We then developed a computational model of this structure, using density functional theory to obtain adsorption energies, work functions, projected density of states, and Born-Oppenheimer molecular dynamics. In this theoretical framework, we explore how these observables change with respect to concentration of Fe, and compare the theoretical model with experiment. special acknowledgement to the Italian Cultural Centre of Durham scholarship program.

  12. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  13. Chitosan-mediated and spatially selective electrodeposition of nanoscale particles.

    Science.gov (United States)

    Wu, Li-Qun; Lee, Kyuyong; Wang, Xiang; English, Douglas S; Losert, Wolfgang; Payne, Gregory F

    2005-04-12

    Nanoscale particles offer a variety of interesting properties, and there is growing interest in their assembly into higher ordered structures. We report that the pH-responsive aminopolysaccharide chitosan can mediate the electrodeposition of model nanoparticles. Chitosan is known to electrodeposit at the cathode surface in response to a high localized pH. To demonstrate that chitosan can mediate nanoparticle deposition, we suspended fluorescently labeled latex nanoparticles (100 nm diameter spheres) in a chitosan solution (1%) and performed electrodeposition (0.05 mA/cm2 for several minutes). Results demonstrate that chitosan is required for nanoparticle electrodeposition; chitosan confers spatial selectivity to electrodeposition; and nanoparticles distribute throughout the electrodeposited chitosan film. Additionally, we observed that the deposited films reversibly swell upon rehydration. This work indicates that chitosan provides a simple means to assemble nanoparticles at addressable locations and provides further evidence that stimuli-responsive biological materials may facilitate fabrication at the microscale.

  14. Development of Electrodeposited CIGS Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-09-357

    Energy Technology Data Exchange (ETDEWEB)

    Neale, Nathan [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-09-01

    At present, most PV materials are fabricated by vacuum technologies. Some of the many disadvantages of vacuum technology are complicated instrumentation, material waste, high cost of deposition per surface area, and instability of some compounds at the deposition temperature. Solution-based approaches for thin-film deposition on large areas are particularly desirable because of the low capital cost of the deposition equipment, relative simplicity of the processes, ease of doping, uniform deposition on a variety of substrates (including interior and exterior of tubes and various nonplanar devices), and potential compatibility with high-throughput (e.g., roll-to-roll) processing. Of the nonsilicon solar photovoltaic device modules that have been deployed to date, those based on the n-CdS/p-CdTe is a leading candidate. Two features in the optical characteristics of CdTe absorber are particularly attractive for photovoltaic conversion of sunlight; (a) its energy bandgap of 1.5 eV, which provides an optimal match with the solar spectrum and thus facilitates its efficient utilization and (b) the direct mode of the main optical transition which results in a large absorption coefficient and turn permits the use of thin layer (1-2 um) of active material. Thin films of CdTe required for these devices have been fabricated by a variety of methods (e.g., vapor transport deposition, vacuum deposition, screen printing and close-spaced sublimation). Electrodeposition is another candidate deserves more attention. This project will focus on delivering low-cost, high efficiency electrodeposited CdTe-based device.

  15. Preparation and characterization of electrodeposited CuInSe{sub 2} thin films; Preparation et caracterisation des couches minces de CuInSe{sub 2} electrodeposees

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Chraibi, F.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Faculte des Sciences; Fahoume, M.; Aggour, M. [Universite Ibn Tofail, Faculte des Sciences, Kenitra (Morocco)

    1998-01-01

    CuInSe{sub 2} is one of the most promising materials for use in photoelectrochemical as well in photovoltaic solar cells because of its excellent photoactive properties such as high optical absorption coefficient (10`4-10`5 cm`-`1) and good stability. It has been prepared from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, H{sub 2}SeO{sub 3} complexed by citrate (Na{sub 3}C{sub 6}H{sub 5}O{sub 7}). The kinetics of electrodeposition has been studied by using the rotating disk electrode method (RDE). X-ray diffraction showed the formation of CuInSe{sub 2} films, of chalcopyrite structure, at potentials ranged between -0.95 V and - 1.12 V (vs. SSE). The composition of the deposited films has been studied by energy dispersive analysis of X-rays (EDAX) and Rutherford backscattering spectroscopy (RBS). From the results, it has been found that stoichiometric chalcopyrite CuInSe{sub 2} has been obtained by controlling both composition, deposition potential, solution temperature and pH. (authors) 16 refs.

  16. Electrodeposition of flake-like Cu{sub 2}O on vertically aligned two-dimensional TiO{sub 2} nanosheet array films for enhanced photoelectrochemical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lei [School of Physics & Material Science, Anhui University, Hefei 230601 (China); Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration, Anhui University, Hefei 230601 (China); Institute of Applied Physics AOA, Hefei 230031 (China); Zhang, Miao; Zhu, Kerong [School of Physics & Material Science, Anhui University, Hefei 230601 (China); Lv, Jianguo [School of Electronic & Information Engineering, Hefei Normal University, Hefei 230601 (China); He, Gang [School of Physics & Material Science, Anhui University, Hefei 230601 (China); Sun, Zhaoqi, E-mail: szq@ahu.edu.cn [School of Physics & Material Science, Anhui University, Hefei 230601 (China)

    2017-01-01

    Highlights: • Flake-like Cu{sub 2}O/TNS with exposed {001} facets constructed p-n heterostructure. • The TNS arrays were used as starting substrates for Cu{sub 2}O growth. • The Cu{sub 2}O/TNS prepared at −0.4 V exhibits the best photoelectrochemical property. - Abstract: A novel Cu{sub 2}O/TNS composite structure of single crystal TiO{sub 2} nanosheet (TNS) arrays decorated with flake-like Cu{sub 2}O were synthesized by a facile hydrothermal reaction followed by the electrodeposition process. The effects of deposition potential on the microstructure, morphology, and optical property of the thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV–vis spectrophotometer. When the deposition potential is higher than −0.4 V, peaks corresponding to Cu appear, meanwhile, flake-like Cu{sub 2}O become agglomerating, and transform into dense Cu{sub 2}O particles. Additionally, photoelectrochemical experiments indicate that the films deposited at −0.4 V show the lowest resistivity and highest exciton separation efficiency. This enhanced photoelectrochemical properties can be explained by synergistic effect of p-type flake-like Cu{sub 2}O and n-type TiO{sub 2} heterojunctions combined with two-dimensional TiO{sub 2} nanosheet with exposed highly reactive {001} facets.

  17. Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

    Science.gov (United States)

    Bhattacharya, Raghu Nath

    2016-01-12

    A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

  18. Electro-Deposition Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The electro-deposition laboratory can electro-deposit various coatings onto small test samples and bench level prototypes. This facility provides the foundation for...

  19. Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    DEFF Research Database (Denmark)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  20. Multisegment CdTe nanowire homojunction photodiode

    International Nuclear Information System (INIS)

    Matei, Elena; Enculescu, Ionut; Ion, Lucian; Antohe, Stefan; Neumann, Reinhard

    2010-01-01

    Electrochemical deposition in nanoporous ion track membranes is used for the preparation of multisegment CdTe-homojunction diode nanowires. Our study is based on the fact that the deposition overpotential strongly influences the composition of the compound semiconductor nanowires. Therefore, the transport behavior of the nanowire devices can be tailored by appropriately choosing a certain sequence of electrodeposition potentials. The wires were characterized using scanning electron microscopy, energy dispersive x-ray analysis, optical spectroscopy and x-ray diffraction. The current-voltage characteristics measured prove that, by appropriately choosing the voltage pulse pattern, one can fabricate nanowires with ohmic or rectifying behavior. The semiconducting nanowires are sensitive to light, their spectral sensitivity being characteristic of CdTe. The preparation of functional nanostructures in such a simple approach provides, as a major advantage, an increase in the process reproducibility and opens a wide field of potential optoelectronic applications.

  1. Novel chromium layers formed by nitrogen-ion implantation of conventional and ABCD electrodeposited films: Pt. 4

    International Nuclear Information System (INIS)

    Ferber, H.; Hoflund, G.B.; Mount, C.K.

    1990-01-01

    Nitrogen-ion implantation of conventional Cr and amorphous bright chromium-deposited (ABCD) films, which were preannealed at various temperatures, has been carried out in order to determine the effect of implantation on the hardness of the Cr layers. The implantation was carried out using low ion beam fluxes in order to maintain a sample temperature below 250 0 C. Implantation leads to increased hardness, but the extent is most pronounced for conventional films which were not annealed and ABCD films which were annealed at or below 400 0 C for 1/2 h. The surface sensitivity of the hardness measurements was varied by altering the load used during the test. Data obtained in this manner show that the more surface-sensitive hardness is greater than the more bulk-sensitive hardness for both the implanted and non-implanted ABCD films and the implanted conventional Cr films. The compositions of the implanted films have been characterized using Auger electron spectroscopy in conjunction with sputter depth profiling. These data show that all the Cr in the implanted region is bound as CrN, Cr oxides and Cr carbides at large total N + doses. Furthermore, the N displaces the C in ABCD films producing N and C profiles that mimic each other in an inverse manner. (author)

  2. Electrodeposition and characterization of CdSe{sub x}Te{sub 1-x} semiconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Faculty of Sciences, Laboratory of Materials Physics, Dept. of Physics, Rabat (Morocco)

    1999-07-01

    Thin polycrystalline films of cadmium chalcogenides CdSe{sub x}Te{sub 1-x} (0{<=}x{<=}1) can be used for various technical applications in particular for the conversion of solar energy in photoelectrochemical devices. They have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 deg. C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe{sub x}Te{sub 1-x} films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

  3. Electrodeposited semiconductors at room temperature: an X-ray Absorption Spectroscopy study of Cu-, Zn-, S-bearing thin films

    International Nuclear Information System (INIS)

    Di Benedetto, Francesco; Cinotti, Serena; D’Acapito, Francesco; Vizza, Francesco; Foresti, Maria Luisa; Guerri, Annalisa; Lavacchi, Alessandro; Montegrossi, Giordano; Romanelli, Maurizio; Cioffi, Nicola; Innocenti, Massimo

    2015-01-01

    A SEM, DRS and XAS study was carried out on ultra-thin films with chemical composition belonging to the Cu-Zn-S ternary system, related to the kesterite-type materials, in the light of their potential application to thin film photovoltaic technology. The films, realized through the layer-by-layer E-ALD electrochemical technique, reveal variable phase composition as a function of the applied E-ALD sequence. In particular, by increasing the Zn cycles per Cu cycle from 1:1 to 9:1, the number of detected phases changes from 3 to 2. In all samples, Cu mainly crystallize in a Cu 2 S type phase, whereas Zn occurs as ZnS. In the 1:1 sample, additional ZnO is detected. The variable phase composition parallels apparent changes in the sample morphology. In all samples, a sulphide thin film is covered by a net of elongated nanostructures, the length of which decreases with increasing the number of Zn cycles per Cu cycle. All these evidences are interpreted as due to the operating electrochemical route during the synthesis and confirm the lack of miscibility between Cu 2 S and ZnS, thermodynamically relevant after the E-ALD has stopped. The band gap values exhibited by the three films, modulated by changing the copper:zinc ratio, progressively approach a value useful for solar energy conversion, thus strongly proposing these new sulfide nanomaterials for photovoltaics and photochemical applications.

  4. Electrodeposition of amorphous MnO x films on Fe-Ni substrates from aqueous sulfate solution

    Science.gov (United States)

    Pires, Manoel J. M.; Fernandes, Lucas S.

    2017-09-01

    Manganese oxides have a number of promising applications from new magnetic phases to high electrical capacitance systems. A common way of producing these materials is by electrochemical deposition using, for instance, baths with manganous acetate or chloride. As an alternative to acetate or chloride, we have used a solution with MnSO4 for the deposition of MnO x films on a magnetic alloy. Fe-Ni sheets with composition around the Invar point were used as substrates showing the practicability of this kind of growth of the Fe-Ni/MnO x system. The films were characterized by cyclic voltammetry, chronoamperometry, x-ray diffraction, optical and scanning electron microscopies. The obtained films are predominantly amorphous oxides with compositions tending to MnO2, and the most homogeneous samples were deposited from a solution with MnSO4 and H3BO3. Solutions with Na2SO4 and (NH4)2SO4 were also tested, but the resulting films were rather heterogeneous and presented poor adhesion to the Fe-Ni substrates. Direct deposition at constant electric potential as well as deposition by cycling the applied potential were analyzed, and the films prepared by both methods are very similar each other respect to morphology, composition and structure.

  5. Evolution of Principle and Practice of Electrodeposited Thin Film: A Review on Effect of Temperature and Sonication

    Directory of Open Access Journals (Sweden)

    A. Mallik

    2011-01-01

    Full Text Available This review discusses briefly the important aspects of thin films. The introduction of the article is a summary of evolution of thin films from surface engineering, their deposition methods, and important issues. The fundamental aspects of electrochemical deposition with special emphasis on the effect of temperature on the phase formation have been reviewed briefly. The field of sonoelectrochemistry has been discussed in the paper. The literature regarding the effects of temperature and sonication on the structure and morphology of the deposits and nucleation mechanisms, residual stress, and mechanical properties has also been covered briefly.

  6. ZnO solar cells with an indoline sensitizer: a comparison between nanoparticulate films and electrodeposited nanowire arrays

    Czech Academy of Sciences Publication Activity Database

    Guillén, E.; Azaceta, E.; Peter, L. M.; Zukal, Arnošt; Tena-Zaera, R.; Anta, J. A.

    2011-01-01

    Roč. 4, č. 9 (2011), s. 3400-3407 ISSN 1754-5692 Institutional research plan: CEZ:AV0Z40400503 Keywords : HIGH-CONVERSION-EFFICIENCY * HYBRID THIN-FILMS * ZINC-OXIDE Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 9.610, year: 2011

  7. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  8. Preliminary studies in the electrodeposition of PbSe/PbTe superlattice thin films via electrochemical atomic layer deposition (ALD).

    Science.gov (United States)

    Vaidyanathan, Raman; Cox, Steven M; Happek, Uwe; Banga, Dhego; Mathe, Mkhulu K; Stickney, John L

    2006-12-05

    This paper concerns the electrochemical growth of compound semiconductor thin film superlattice structures using electrochemical atomic layer deposition (ALD). Electrochemical ALD is the electrochemical analogue of atomic layer epitaxy (ALE) and ALD, methods based on nanofilm formation an atomic layer at a time, using surface-limited reactions. Underpotential deposition (UPD) is a type of electrochemical surfaced-limited reaction used in the present studies for the formation of PbSe/PbTe superlattices via electrochemical ALD. PbSe/PbTe thin-film superlattices with modulation wavelengths (periods) of 4.2 and 7.0 nm are reported here. These films were characterized using electron probe microanalysis, X- ray diffraction, atomic force microscopy (AFM), and infrared reflection absorption measurements. The 4.2 nm period superlattice was grown after deposition of 10 PbSe cycles, as a prelayer, resulting in an overall composition of PbSe0.52Te0.48. The 7.0 nm period superlattice was grown after deposition of 100 PbTe cycle prelayer, resulting for an overall composition of PbSe0.44Te0.56. The primary Bragg diffraction peak position, 2theta, for the 4.2 superlattice was consistent with the average (111) angles for PbSe and PbTe. First-order satellite peaks, as well as a second, were observed, indicating a high-quality superlattice film. For the 7.0 nm superlattice, Bragg peaks for both the (200) and (111) planes of the PbSe/PbTe superlattice were observed, with satellite peaks shifted 1 degrees closer to the (111), consistent with the larger period of the superlattice. AFM suggested conformal superlattice growth on the Au on glass substrate. Band gaps for the 4.2 and 7.0 nm period superlattices were measured as 0.48 and 0.38 eV, respectively.

  9. Electrodeposition of polypyrrole-multiwalled carbon nanotube-glucose oxidase nanobiocomposite film for the detection of glucose.

    Science.gov (United States)

    Tsai, Yu-Chen; Li, Shih-Ci; Liao, Shang-Wei

    2006-10-15

    A nanobiocomposite film consisted of polypyrrole (PPy), functionalized multiwalled carbon nanotubes (cMWNTs), and glucose oxidase (GOx) were electrochemically synthesized by electrooxidation of 0.1M pyrrole in aqueous solution containing appropriate amounts of cMWNTs and GOx. Potentiostatic growth profiles indicate that the anionic cMWNTs is incorporated within the growing PPy-cMWNTs nanocomposite for maintaining its electrical neutrality. The morphology of the PPy-cMWNTs nanocomposite was characterized by scanning electron microscopy (SEM). The PPy-cMWNTs nanocomposite was deposited homogeneously onto glassy carbon electrode. The amperometric responses vary proportionately to the concentration of hydrogen peroxide at the PPy-cMWNTs nanocomposite modified electrode at an operating potential of 0.7V versus Ag/AgCl (3M). The results indicate that the electroanalytical PPy-cMWNTs-GOx nanobiocomposite film was highly sensitive and suitable for glucose biosensor based on GOx function. The GOx concentration within the PPy-cMWNTs-GOx nanobiocomposite and the film thickness are crucial for the performance of the glucose biosensor. The amperometric responses of the optimized PPy-cMWNTs-GOx glucose biosensor (1.5 mgmL(-1) GOx, 141 mCcm(-2) total charge) displayed a sensitivity of 95 nAmM(-1), a linear range up to 4mM, and a response time of about 8s.

  10. Advances in CdTe R&D at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.

    2005-11-01

    This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.

  11. Quantitative texture analysis of electrodeposited line patterns

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A.J.

    2005-01-01

    Free-standing line patterns of Cu and Ni were manufactured by electrochemical deposition into lithographically prepared patterns. Electrodeposition was carried out on top of a highly oriented Au-layer physically vapor deposited on glass. Quantitative texture analysis carried out by means of x......-ray diffraction for both the substrate layer and the electrodeposits yielded experimental evidence for epitaxy between Cu and Au. An orientation relation between film and substrate was discussed with respect to various concepts of epitaxy. While the conventional mode of epitaxy fails for the Cu...

  12. Synthesis of shape memory alloys using electrodeposition

    Science.gov (United States)

    Hymer, Timothy Roy

    Shape memory alloys are used in a variety of applications. The area of micro-electro-mechanical systems (MEMS) is a developing field for thin film shape memory alloys for making actuators, valves and pumps. Until recently thin film shape memory alloys could only be made by rapid solidification or sputtering techniques which have the disadvantage of being "line of sight". At the University of Missouri-Rolla, electrolytic techniques have been developed that allow the production of shape memory alloys in thin film form. The advantages of this techniques are in-situ, non "line of sight" and the ability to make differing properties of the shape memory alloys from one bath. This research focused on the electrodeposition of In-Cd shape memory alloys. The primary objective was to characterize the electrodeposited shape memory effect for an electrodeposited shape memory alloy. The effect of various operating parameters such as peak current density, temperature, pulsing, substrate and agitation were investigated and discussed. The electrodeposited alloys were characterized by relative shape memory effect, phase transformation, morphology and phases present. Further tests were performed to optimize the shape memory by the use of a statistically designed experiment. An optimized shape memory effect for an In-Cd alloy is reported for the conditions of the experiments.

  13. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    Science.gov (United States)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  14. Design Strategies for High-Efficiency CdTe Solar Cells

    Science.gov (United States)

    Song, Tao

    With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness concentration. (Abstract shortened by ProQuest.).

  15. Preliminary results about Electrodeposition of Cobalt at laboratory level

    International Nuclear Information System (INIS)

    Cornejo, N.

    1992-01-01

    As of an organic compound, an extraction and Cobalt electrodeposition method had been developed as a part of fabrication aim of a sealed radioactive source with objective to the construction of density meter prototype. It was performed preliminary test of electrodeposition in the laboratory level in a simple cell. The used electrolyte had been a sulphate solution obtained by extraction of an organic solution. It is obtained a Co film by electrodeposition at 55 o C temperature and with an approximately Co concentration in 70 g/lt. (Author) 3 refs., 1 fig., 1 tab

  16. Electrodeposition of Radium

    International Nuclear Information System (INIS)

    Crespo, M.T.; Jimenez, A.S.

    1996-01-01

    A study of different electrodeposition methods of radium for its measurement by alpha-spectrometry is presented. The recommended procedure uses an aqueous solution of ammonium oxalate and nitric acid in the presence of microgram amounts of platinum as electrolyte

  17. 2012 Electrodeposition Gordon Research Conference and Gordon Research Seminar, July 29 - August 3, 2012

    Energy Technology Data Exchange (ETDEWEB)

    Gewirth, Andrew

    2013-08-03

    The 2012 Gordon Conference on Electrodeposition: Electrochemical Materials Synthesis and Applications will present cutting-edge research on electrodeposition with emphasis on (i) advances in basic science, (ii) developments in next-generation technologies, and (iii) new and emerging areas. The Conference will feature a wide range of topics, from atomic scale processes, nucleation and growth, thin film deposition, and electrocrystallization, to applications of electrodeposition in devices including microelectronics, batteries, solar energy, and fuel cells.

  18. Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

    1992-09-01

    This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

  19. A highly sensitive non-enzymatic glucose sensor based on nickel and multi-walled carbon nanotubes nanohybrid films fabricated by one-step co-electrodeposition in ionic liquids

    International Nuclear Information System (INIS)

    Sun Aili; Zheng Jianbin; Sheng Qinglin

    2012-01-01

    Graphical abstract: Cyclic voltammograms of Ni–MWNTs/GCE at different concentrations of glucose. Highlights: ► Ni –MWNT nanohybrid film was successfully synthesized and characterized by SEM and EDS. ► The mechanism of glucose at Ni –MWNT nanohybrid film was evaluated and the upper glucose concentration limit produced a linear response of 17.5 mM. ► Simple of preparation and good analytical response made nanohybrid films a promising sensor material for non-enzymatic glucose sensing in routine analysis. - Abstract: In this paper, nickel was combined with multi-walled carbon nanotubes (Ni–MWNTs) to fabricate nanohybrid films on a conventional glassy carbon electrode using simultaneous electrodeposition of NiCl 2 and the MWNTs in ionic liquids (ILs). The morphologies and elemental compositions of the nanohybrid films were investigated with scanning electron microscopy and energy dispersive spectroscopy. A novel non-enzymatic glucose sensor based on the Ni–MWNT nanohybrid film-modified glassy carbon electrode was described, and its electrochemical behaviors were investigated. The proposed sensor exhibited high electrocatalytic activity and good response to glucose. Under optimal conditions, the sensor showed high sensitivity (67.2 μA mM −1 cm −2 ), rapid response time (<2 s) and a low detection limit (0.89 μM; signal/noise ratio of 3). In particular, the upper glucose concentration limit produced a linear response of 17.5 mM. Thus, the Ni–MWNT nanohybrid films represent promising sensor materials for non-enzymatic glucose sensing in routine analyses.

  20. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    mental phase contrast images and the diffraction pattern. Figure 3. (a) Bright field image of electrodeposited boron spec- imen showing a crystallite of size ∼10 × 5 nm; (b) phase contrast image of electrodeposited boron specimen showing a resolved la- ttice and (c) power spectrum of electrodeposited boron specimen.

  1. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    International Nuclear Information System (INIS)

    Rodríguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martín, Francisco; Schrebler, Ricardo; Ramos-Barrado, José R.; Dalchiele, Enrique A.

    2012-01-01

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic–organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of ∼ 40% to ∼ 50% in the visible region between 450 and 700 nm. The current–voltage (I–V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range − 4 V to + 4 V. The I–V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: ► Semitransparent inorganic–organic heterojunction thin film diodes investigated ► n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction ► Diodes exhibited an optical transmission of ∼ 40%–∼ 50% in the visible region ► Heterojunction current–voltage features show good rectifying diode characteristics ► A forward to reverse current ratio as high as 35 (− 4 V to + 4 V range) was attained

  2. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2012-12-15

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

  3. Reversible Silver Electrodeposition from Boron Cluster Ionic Liquid (BCIL) Electrolytes.

    Science.gov (United States)

    Dziedzic, Rafal M; Waddington, Mary A; Lee, Sarah E; Kleinsasser, Jack; Plumley, John B; Ewing, William C; Bosley, Beth D; Lavallo, Vincent; Peng, Thomas L; Spokoyny, Alexander M

    2018-02-28

    Electrochemical systems offer a versatile means for creating adaptive devices. However, the utility of electrochemical deposition is inherently limited by the properties of the electrolyte. The development of ionic liquids enables electrodeposition in high-vacuum environments and presents opportunities for creating electrochemically adaptive and regenerative spacecraft components. In this work, we developed a silver-rich, boron cluster ionic liquid (BCIL) for reversible electrodeposition of silver films. This air and moisture stable electrolyte was used to deposit metallic films in an electrochemical cell to tune the emissivity of the cell in situ, demonstrating a proof-of-concept design for spacecraft thermal control.

  4. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

    2014-10-25

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  5. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

    2015-01-01

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  6. Surface roughness analysis of electrodeposited Cu

    International Nuclear Information System (INIS)

    Lafouresse, M.C.; Heard, P.J.; Schwarzacher, W.

    2007-01-01

    Cu films were electrodeposited with mass transport controlled using a rotating disc electrode (RDE), and imaged with an atomic force microscope (AFM). The length-dependent roughness w(l,t) of these films follows a power law of the form w∝l H t β loc for small length-scales l, with the local roughness exponent, β loc , varying from 0 to 0.5 depending on the experimental conditions. It was found that contrary to previous work β loc is not simply a function of the ratio of the current j to its diffusion-limited value j L . Focused ion beam (FIB) imaging was used as a new method of characterizing the film roughness. FIB images confirmed the existence of small β loc values for films for which the AFM data could have been unreliable. FIB is a particularly powerful method for characterizing high roughness films

  7. Advances in polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  8. Advances in polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  9. Recent Advances in Superhydrophobic Electrodeposits

    Directory of Open Access Journals (Sweden)

    Jason Tam

    2016-03-01

    Full Text Available In this review, we present an extensive summary of research on superhydrophobic electrodeposits reported in the literature over the past decade. As a synthesis technique, electrodeposition is a simple and scalable process to produce non-wetting metal surfaces. There are three main categories of superhydrophobic surfaces made by electrodeposition: (i electrodeposits that are inherently non-wetting due to hierarchical roughness generated from the process; (ii electrodeposits with plated surface roughness that are further modified with low surface energy material; (iii composite electrodeposits with co-deposited inert and hydrophobic particles. A recently developed strategy to improve the durability during the application of superhydrophobic electrodeposits by controlling the microstructure of the metal matrix and the co-deposition of hydrophobic ceramic particles will also be addressed.

  10. The influence of series resistance on the I-V characteristics of CdTe ...

    African Journals Online (AJOL)

    The influence of series resistance (Rs) on the current (I) – voltage(V) characteristics of evaporated cadmium telluride(CdTe) thin films has been investigated. CdTe films of thickness 1000Å were deposited by thermal evaporation in a vacuum of about 10-5torr. For the I – V measurements, the two point probe configuration ...

  11. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2003-10-01

    This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

  12. Effect of condensation product on electrodeposition of zinc on mild ...

    Indian Academy of Sciences (India)

    WINTEC

    AAO template. Nanowires: properties, applications and synthesis via porous anodic aluminium oxide template. 271. Absorption coefficient. Optical properties of CeO2 thin films. 315. Acid chloride bath. Effect of condensation product on electrodeposition of zinc on mild steel. 463. Acrylamide. Selective absorption of water ...

  13. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2016-10-15

    II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  14. Influence of calcination temperature on the photoelectrochemical and photocatalytic properties of porous TiO2 films electrodeposited from Ti(IV)-alkoxide solution

    Czech Academy of Sciences Publication Activity Database

    Wessels, K.; Minnermann, M.; Rathouský, Jiří; Wark, M.; Oekermann, T.

    2008-01-01

    Roč. 112, č. 39 (2008), s. 15122-15128 ISSN 1932-7447 Institutional research plan: CEZ:AV0Z40400503 Keywords : sensitized solar cells * hybrid thin films * zinc oxide films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.396, year: 2008

  15. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposi- tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous me-.

  16. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 29; Issue 2. Characterization of nanocrystalline ... Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, ...

  17. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  18. Electrodeposition of polyfluorene on a carbon nanotube electrode

    International Nuclear Information System (INIS)

    Valentini, L; Mengoni, F; Mattiello, L; Kenny, J M

    2007-01-01

    Electrophoretically deposited single-walled carbon nanotube (SWCNT) films on a transparent conducting surface are used as electrodes for the electrodeposition of a π-conjugated polymer formed by the oxidative coupling of fluorene units. This method provides a uniform coverage of the conducting surface with respect to SWCNTs chemically assembled on a gold substrate. Electron microscopy reveals the formation of a polymer-SWCNT nanostructure which imparts distinct electrical properties from those of the polymer electrodeposited on the neat electrode. By combining the attractive properties of SWCNTs and polyfluorene, these nanocomposites open up new opportunities to achieve electrical contacts in nano- to micro-devices

  19. Architectural Growth of Cu Nanoparticles Through Electrodeposition

    Directory of Open Access Journals (Sweden)

    Cheng Ching-Yuan

    2009-01-01

    Full Text Available Abstract Cu particles with different architectures such as pyramid, cube, and multipod have been successfully fabricated on the surface of Au films, which is the polycrystalline Au substrate with (111 domains, using the electrodeposition technique in the presence of the surface-capping reagents of dodecylbenzene sulfonic acid and poly(vinylpyrrolidone. Further, the growth evolution of pyramidal Cu nanoparticles was observed for the first time. We believe that our method might open new possibilities for fabricating nanomaterials of non-noble transition metals with various novel architectures, which can then potentially be utilized in applications such as biosensors, catalysis, photovoltaic cells, and electronic nanodevices.

  20. Excess Dark Currents and Transients in Thin-Film CdTe Solar Cells: Implications for Cell Stability and Encapsulation of Scribe Lines and Cell Ends in Modules

    Energy Technology Data Exchange (ETDEWEB)

    McMahon, T. J.; Berniard, T. J.; Albin, D. S.; Demtsu, S. H.

    2005-02-01

    We have isolated a non-linear, metastable, shunt-path failure mechanism located at the CdS/CdTe cell edge. In such cases, most performance loss, usually erratic, can be associated with the shunt path. We studied these shunt paths using dark current-transients and infrared (ir) imaging and find only one shunt path per cell and only at the cell corner wall, even in badly degraded cells. The effect on diminishing the cell's efficiency far exceeds what would be expected from the cell's linear shunt-resistance value. We propose that current transients and ir imaging be used as a ''fingerprint'' of the source and magnitude of excess currents to evaluate the contribution of scribe-line edges and cell ends in thin-film module performance and degradation due to environmental stress. Protection afforded by, or contamination due to, new or currently used encapsulants can then be evaluated.

  1. Influences of magnetic field on the fractal morphology in copper electrodeposition

    Science.gov (United States)

    Sudibyo; How, M. B.; Aziz, N.

    2018-01-01

    Copper magneto-electrodeposition (MED) is used decrease roughening in the copper electrodeposition process. This technology plays a vital role in electrodeposition process to synthesize metal alloy, thin film, multilayer, nanowires, multilayer nanowires, dot array and nano contacts. The effects of magnetic fields on copper electrodeposition are investigated in terms of variations in the magnetic field strength and the electrolyte concentration. Based on the experimental results, the mere presence of magnetic field would result in a compact deposit. As the magnetic field strength is increased, the deposit grows denser. The increment in concentration also leads to the increase the deposited size. The SEM image analysis showed that the magnetic field has a significant effect on the surface morphology of electrodeposits.

  2. Scale-Up of the Electrodeposition of ZnO/Eosin Y Hybrid Thin Films for the Fabrication of Flexible Dye-Sensitized Solar Cell Modules

    Directory of Open Access Journals (Sweden)

    Florian Bittner

    2018-02-01

    Full Text Available The low-temperature fabrication of flexible ZnO photo-anodes for dye-sensitized solar cells (DSSCs by templated electrochemical deposition of films was performed in an enlarged and technical simplified deposition setup to demonstrate the feasibility of the scale-up of the deposition process. After extraction of eosin Y (EY from the initially deposited ZnO/EY hybrid films, mesoporous ZnO films with an area of about 40 cm2 were reproducibly obtained on fluorine doped tin oxide (FTO-glass as well as flexible indium tin oxide (ITO–polyethylenterephthalate (PET substrates. With a film thickness of up to 9 µm and a high specific surface area of up to about 77 m2·cm−3 the ZnO films on the flexible substrates show suitable properties for DSSCs. Operative flexible DSSC modules proved the suitability of the ZnO films for use as DSSC photo-anodes. Under a low light intensity of about 0.007 sun these modules achieved decent performance parameters with conversion efficiencies of up to 2.58%. With rising light intensity the performance parameters deteriorated, leading to conversion efficiencies below 1% at light intensities above 0.5 sun. The poor performance of the modules under high light intensities can be attributed to their high series resistances.

  3. Sequential electro-deposition of Bi{sub 2}S{sub 3}/CdS films as co-sensitizer photoanodes for liquid junction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Atanu; Hazra, Prasenjit; Hazra, Mukul; Datta, Jayati, E-mail: jayati_datta@rediffmail.com

    2016-11-01

    In this investigation multilayered conjugate films are formulated with Bi{sub 2}S{sub 3} and CdS nanoparticles (NPs) on FTO glass substrate. Thin layer Bi{sub 2}S{sub 3} was deposited and subsequently covered with various levels of CdS coating. Optical properties and XRD analysis of the films show existence of both the compound phases. The morphology of the films studied through electron microscopy reveals coverage of spherical CdS NPs on the network of Bi{sub 2}S{sub 3} NPs. The electrochemical impedance records and performances output characteristics of the n-type films show that the most efficient co-sensitizer matrix is produced with deep coating of CdS on thin layer of Bi{sub 2}S{sub 3}. - Highlights: • Multilayered Bi{sub 2}S{sub 3}/CdS conjugate films are formulated on FTO glass substrate. • Photo-degradation of Bi{sub 2}S{sub 3} is restricted by the coating of CdS layer. • High level of Cd coating on thin layer of Bi{sub 2}S{sub 3} have shown appreciable photocurrent output. • Photo-conversion efficiency of 0.93% is observed for the best conjugate film.

  4. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  5. CuTe Nanoparticles/Carbon Nanotubes as Back Contact for CdTe Solar Cells

    Science.gov (United States)

    Li, Chunxiu; Xu, Hang; Li, Kang; Ma, Xiao; Wu, Lili; Wang, Wenwu; Zhang, Jingquan; Li, Wei; Li, Bing; Feng, Lianghuan

    2018-02-01

    The Schottky barrier between the CdTe layer and metal electrode has opposite polarity to the CdS/CdTe cell junction, which can greatly degrade cell performance. Adding a back contact (BC) layer can reduce the Schottky barrier at metal/ p-CdTe interfaces. Paste including CuTe nanoparticles and carbon nanotubes (CuTe NPs/CNTs) was used as a BC in thin-film CdTe solar cells. The effect of the mass of carbon nanotubes (CNTs) in the paste and the BC annealing temperature on cell performance was explored. Cu film and paste including Cu nanoparticles and carbon nanotubes (Cu NPs/CNTs) were fabricated as the BC for CdTe solar cells. The performance of CdTe solar cells based on different kinds of Cu-containing BCs studied. The fill factor and open-circuit voltage ( V OC) of devices with CuTe NPs/CNTs BC were greatly improved by optimizing the mass of CNTs in the paste and the annealing temperature. The carrier concentration in the CdTe layer was improved by one order of magnitude. The CuTe NPs/CNTs BC showed the best effect on cell efficiency for the Cu-containing BC.

  6. Rapid thermal annealing effects on the microstructure and the thermoelectric properties of electrodeposited Bi{sub 2}Te{sub 3} film

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Mohammad Mamunur [School of Electrical Engineering, University of Ulsan, 93 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of); Cho, Kyung Ho [Agency for Defense Development, Yuseong P.O. Box 35-42, Daejeon 305-600 (Korea, Republic of); Chung, Gwiy-Sang, E-mail: gschung@ulsan.ac.kr [School of Electrical Engineering, University of Ulsan, 93 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of)

    2013-08-15

    Bismuth telluride thermoelectric films were prepared by galvanostatic process from 1 M nitric acid solution containing 8 mM Bi{sup 3+} and 8 mM HTeO{sub 2}{sup +}. Both the n and p-type films were deposited. The thermoelectric properties of the films were measured before and after the rapid thermal annealing treatment to observe the annealing effects on the as-deposited film. Post annealing treatment was carried out under Ar environment at 200–300 °C for 2–10 min duration. Annealing effects on microstructure were examined from X-Ray diffraction (XRD) patterns and Scanning Electron Microscopy images. Electrical transport properties were analyzed by Hall Effect measurement system. The analysis revealed that the carrier density decreased and the carrier mobility increased with the enhancing of annealing temperature and duration. The Seebeck coefficient and power factor were improved significantly after rapid annealing treatment for both n and p-type Bi{sub 2}Te{sub 3} films. For n-type Bi{sub 2}Te{sub 3} film, the Seebeck coefficient improved about three-fold (from −57 to −169.49 μV/K) and the power factor improved around six-fold (from 2.74 to 17.37 μW/K{sup 2} cm) after annealing. On the other hand, for p-type Bi{sub 2}Te{sub 3} film the Seebeck coefficient enhanced around three-fold (from 28 to 112.3 μV/K) and the power factor enhanced around two-fold (from 2.57 to 4.43 μW/K{sup 2} cm) after annealing.

  7. Stress control in electrodeposited CoFe films—Experimental study and analytical model

    International Nuclear Information System (INIS)

    Brankovic, Stanko R.; Kagajwala, Burhanuddin; George, Jinnie; Majkic, Goran; Stafford, Gery; Ruchhoeft, Paul

    2012-01-01

    Work investigating the effect of saccharin as an additive on growth stress and structure of electrodeposited CoFe films is presented. The saccharin concentrations were in the range between 0 g L −1 and 1.5 g L −1 . The stress measurements are performed in situ during electrodeposition of CoFe films using cantilever-bending method (curvature measurements). The structure of CoFe films was studied by transmission electron microscopy and X-ray diffraction. Results show that growth stress is a decreasing function of saccharin concentration. No appreciable change in composition, grain size, orientation or texture of CoFe films are observed with increasing saccharin content in solution. The growth stress dependence on saccharin concentration is discussed within the framework of analytical model, which directly links the observed stress decrease with the apparent saccharin coverage of the CoFe film surface during the electrodeposition process.

  8. Electrodeposition of Iridium Oxide by Cyclic Voltammetry: Application of Response Surface Methodology

    Directory of Open Access Journals (Sweden)

    Kakooei Saeid

    2014-07-01

    Full Text Available The effects of scan rate, temperature, and number of cycles on the coating thickness of IrOX electrodeposited on a stainless steel substrate by cyclic voltammetry were investigated in a statistical system. The central composite design, combined with response surface methodology, was used to study condition of electrodeposition. All fabricated electrodes were characterized using electrochemical methods. Field emission scanning electron microscopy and energy-dispersive X-ray spectroscopy were performed for IrOX film characterization. Results showed that scan rate significantly affects the thickness of the electrodeposited layer. Also, the number of cycles has a greater effect than temperature on the IrOX thickness.

  9. High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

    Science.gov (United States)

    Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

    2018-05-01

    This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

  10. Metastability and reliability of CdTe solar cells

    Science.gov (United States)

    Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

    2018-04-01

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

  11. Laser thermoreflectance for semiconductor thin films metrology

    Science.gov (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.

    2012-06-01

    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  12. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    Directory of Open Access Journals (Sweden)

    Hao Xue

    2016-07-01

    Full Text Available Solution-processed CdTe nanocrystals (NCs photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values comparable to those of commercial thin film CdTe/CdS solar cells fabricated by the close-space sublimation (CSS method. Here we review the progress and prospects in this field, focusing on new insights into CdTe NCs synthesized, device fabrication, NC solar cell operation, and how these findings give guidance on optimizing solar cell performance.

  13. Indirect bipolar electrodeposition.

    Science.gov (United States)

    Loget, Gabriel; Roche, Jérome; Gianessi, Eugenio; Bouffier, Laurent; Kuhn, Alexander

    2012-12-12

    Based on the principles of bipolar electrochemistry, localized pH gradients are generated at the surface of conducting particles in solution. This allows the toposelective deposition of inorganic and organic polymer layers via a pH-triggered precipitation mechanism. Due to the intrinsic symmetry breaking of the process, the concept can be used to generate in a straightforward way Janus particles, with one section consisting of deposits obtained from non-electroactive precursors. These indirect electrodeposits, such as SiO(2), TiO(2), or electrophoretic paints, can be further used as an immobilization matrix for other species like dyes or nanoparticles, thus opening promising perspectives for the synthesis of a variety of bifunctional objects with a controlled shape.

  14. Fluence and ion dependence of amorphous iron-phase-formation due to swift heavy ion irradiation in electrodeposited iron thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stichleutner, S. [Institute of Chemistry, Eoetvoes University, Budapest (Hungary); Institute of Isotopes, Hungarian Academy of Sciences, Budapest (Hungary); Kuzmann, E., E-mail: kuzmann@ludens.elte.h [Institute of Chemistry, Eoetvoes University, Budapest (Hungary); Laboratory of Nuclear Chemistry, Chemical Research Center, Hungarian Academy of Sciences, Budapest (Hungary); Havancsak, K.; Huhn, A. [Department of Materials Physics, Eoetvoes University, Budapest (Hungary); El-Sharif, M.R.; Chisholm, C.U.; Doyle, O. [Glasgow Caledonian University, Glasgow, Scotland (United Kingdom); Skuratov, V. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Homonnay, Z. [Institute of Chemistry, Eoetvoes University, Budapest (Hungary); Vertes, A. [Institute of Chemistry, Eoetvoes University, Budapest (Hungary); Laboratory of Nuclear Chemistry, Chemical Research Center, Hungarian Academy of Sciences, Budapest (Hungary)

    2011-03-15

    {sup 57}Fe conversion electron Moessbauer spectroscopy, XRD and AFM measurements were used to study the radiation effect of 246 MeV Kr, 470 MeV Xe and 710 MeV Bi ions on electrochemically deposited iron thin films. It was found that, in the irradiated electrochemically deposited crystalline ferromagnetic {alpha}-Fe coatings, partial amorphisation of Fe took place. The relative amount of the ferromagnetic amorphous phase increased with both ion energy and ion mass as well as with the fluence of irradiation.

  15. CDTE alloys and their application for increasing solar cell performance

    Science.gov (United States)

    Swanson, Drew E.

    Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

  16. Modeling of Copper Migration In CdTe Photovoltaic Devices

    Science.gov (United States)

    Guo, Da

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. The most commonly alleged causes of instability in CdTe device, such as "migration of Cu," have been investigated rigorously over the past fifteen years. As all defects, intrinsic or extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and changing ionization state with excess free carriers. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging. The goal of the work in this dissertation is, thus, to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device's function. The 1D Unified Solver, developed as part of this effort, enables us to analyze PV devices at a greater depth. In this dissertation, the implementation of a drift-diffusion model defect migration simulator, development of an implicit reaction scheme for total mass conservation, and a couple of other numerical schemes to improve the overall flexibility and robustness of this coupled Unified Solver is discussed. Preliminary results on Cu (with or without Cl-treatment) annealing simulations in both single-crystal CdTe wafer and poly-crystalline CdTe devices show promising agreement to experimental findings, providing a new perspective in the research of improving doping concentration hence the open-circuit voltage of CdTe technology. Furthermore, on the reliability side, in agreement of previous experimental reports, simulation results suggest possibility of Cu depletion in short-circuited cells stressed at elevated temperature

  17. Hydrothermal synthesis of CdTe QDs: Their luminescence quenching in the presence of bio-molecules and observation of bistable memory effect in CdTe QD/PEDOT:PSS heterostructure

    International Nuclear Information System (INIS)

    Khatei, Jayakrishna; Koteswara Rao, K.S.R.

    2011-01-01

    Highlights: · CdTe QD has been prepared by modified hydrothermal method in room ambient. · Luminescence quenching of CdTe QDs in the presence of bio-molecules demonstrated. · The CdTe QDs shows memory effect (electrical bistability). - Abstract: We report one-pot hydrothermal synthesis of nearly mono-disperse 3-mercaptopropionic acid capped water-soluble cadmium telluride (CdTe) quantum dots (QDs) using an air stable Te source. The optical and electrical characteristics were also studied here. It was shown that the hydrothermal synthesis could be tuned to synthesize nano structures of uniform size close to nanometers. The emissions of the CdTe QDs thus synthesized were in the range of 500-700 nm by varying the duration of synthesis. The full width at half maximum (FWHM) of the emission peaks is relatively narrow (40-90 nm), which indicates a nearly uniform distribution of QD size. The structural and optical properties of the QDs were characterized by transmission electron microscopy (TEM), photoluminescence (PL) and Ultraviolet-visible (UV-Vis) spectroscopy. The photoluminescence quenching of CdTe QDs in the presence of L-cysteine and DNA confirms its biocompatibility and its utility for biosensing applications. The room temperature current-voltage characteristics of QD film on ITO coated glass substrate show an electrically induced switching between states with high and low conductivities. The phenomenon is explained on the basis of charge confinement in quantum dots.

  18. Direct electrodeposition of aluminium nano-rods

    OpenAIRE

    Perre, Emilie; Nyholm, Leif; Gustafsson, Torbjörn; Taberna, Pierre-Louis; Simon, Patrice; Edström, Kristina

    2008-01-01

    Electrodeposition of aluminium within an alumina nano-structured template, for use as high surface area current collectors in Li-ion microbatteries, was investigated. The aluminium electrodeposition was carried out in the ionic liquid 1-ethyl-3-methylimidazolium chloride:aluminium chloride (1:2 ratio). First the aluminium electrodeposition process was confirmed by combined cyclic voltammetry and electrochemical quartz crystal microbalance measurements. Then, aluminium was electrodeposit...

  19. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  20. The effect of different component ratios in block polymers and processing conditions on electrodeposition efficiency onto titanium

    Energy Technology Data Exchange (ETDEWEB)

    Fukuhara, Yusuke; Kyuzo, Megumi [Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tsutsumi, Yusuke [Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Nagai, Akiko [Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Chen, Peng [Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Hanawa, Takao, E-mail: hanawa.met@tmd.ac.jp [Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan)

    2015-11-15

    Graphical abstract: - Highlights: • MPC polymers with an ability of electrodeposition were synthesized. • MPC polymers were immobilized on titanium substrates by electrodeposition. • Immobilization by electrodeposition of MPC polymer decreased water contact angle and protein adsorption. • Length of MPC unit and electrodeposition time did not influence water contact angle and protein adsorption. - Abstract: 2-Methacryloyloxyethyl phosphorylcholine (MPC) polymers for electrodeposition to titanium surfaces were synthesized. The polymers were block-type copolymers composed of a poly(MPC) segment and a poly(2-aminoethylmethacrylate (AEMA)) segment, which could electronically adsorb to a titanium oxide film on the titanium surface. The polymer was synthesized as expected by nuclear magnetic resonance and gel permeation chromatography. In a 0.26 mmol L{sup −1} PMbA solution adjusted to pH 11, −3.0 V (vs. an Ag/AgCl electrode) was applied to a titanium substrate for 300 s. We evaluated the effects of the molecular structure of poly(MPC-block-AEMA) (PMbA) with a different polymerization degree of MPC unit, whereas the polymerization degree of the AEMA units was fixed. The 15-min electrodeposition of PMbA100 was the most efficient condition in this study. On the other hand, the results of the water contact angle and the amount of adsorbed protein did not change, even when altering the MPC unit number and electrodeposition time. This indicates that the immobilization by electrodeposition of PMbA is important for the inhibition of protein adsorption, while the polymerization degree of the MPC unit and the electrodeposition time do not influence them. This study will enhance the understanding of effective polymer structures for electrodeposition and electrodeposition conditions.

  1. Niobium electrodeposition from molten fluorides

    International Nuclear Information System (INIS)

    Sartori, A.F.

    1987-01-01

    Niobium electrodeposition from molten alkali fluorides has been studied aiming the application of this technic to the processes of electrorefining and galvanotechnic of this metal. The effects of current density, temperature, niobium concentration in the bath, electrolysis time, substrate nature, ratio between anodic and cathodic areas, electrodes separation and the purity of anodes were investigated in relation to the cathodic current efficiency, electrorefining, electroplating and properties of the deposit and the electrolytic solution. The work also gives the results of the conctruction and operation of a pilot plant for refractory metals electrodeposition and shows the electrorefining and electroplating compared to those obtained at the laboratory scale. (author) [pt

  2. Electrodeposition of silver nanodendrites

    International Nuclear Information System (INIS)

    Kaniyankandy, Sreejith; Nuwad, J; Thinaharan, C; Dey, G K; Pillai, C G S

    2007-01-01

    Nanodendrites of silver were synthesized by electrodeposition using AgNO 3 as the source in ammoniacal solution. The method was remarkably fast, simple and scalable. X-ray diffraction (XRD) studies confirmed the formation of a cubic phase of silver. Scanning electron microscopy (SEM) revealed the formation of well-shaped dendrites. The nanodendrites were hyperbranched with lengths of the order of a few micrometres. The concentration of NH 3 in the electrolyte solution was found to have remarkable influence on the morphology, crystallite size and formation of branched nanodendrites. The branchings were found to occur at regular intervals of ∼50 nm along the main stem. Transmission electron microscopy (TEM) studies confirmed the SEM observation and revealed the 2D nature of the dendrites. Selected area electron diffraction (SAED) revealed that the dendrites were single crystalline in nature and the branching could have a crystalline origin. The direction of growth as inferred from SAED was . UV-vis spectra showed a single broad band centred on ∼380 nm indicating the spherical shape of the individual crystallites. The intrinsic size effect of the metal surface plasmon was used to explain the increase in the broadening on addition of NH 3 . The asymmetry of the band was explained on the basis of agglomeration of crystallites. The nanodendrites prepared by this method showed extension of the plasmon band through the entire visible region, indicating potential use in detection of single molecules based on enhanced Raman scattering. The deposition mechanism is described using the diffusion-limited aggregation model

  3. Thermoelectric properties of electrodeposited CuNi alloys on Si

    Science.gov (United States)

    Delatorre, R. G.; Sartorelli, M. L.; Schervenski, A. Q.; Pasa, A. A.; Güths, S.

    2003-05-01

    Thin films with the composition of the constantan alloy (a solid solution with 35 to 50 wt. % of Ni in Cu) have a high-thermoelectric power, which allows the fabrication of very sensitive heat-flux sensors based on planar technology. In this article, the thermoelectric properties of CuxNi100-x thin films electrodeposited on silicon were studied as a function of the composition, temperature, and thickness. The electrodeposition of thin layers on silicon is an important step for the integration of thermal sensors with semiconductor technology. The CuxNi100-x alloys were electrodeposited potentiostatically at room temperature, from a citrate electrolyte containing both copper and nickel sulfates. The layer composition was controlled by the applied potential in the range from pure copper (at -0.4 V/SCE) up to a solid solution of about 25 wt. % Cu in Ni (at -1.2 V/SCE). Extremely high values of thermoelectric power were measured for very thin layers of Cu40Ni60 on Si, showing a strong influence of the substrate. By considering the system as a thermoelectric bilayer and extracting the contribution of the semiconductor, thermopower values for the Cu40Ni60 alloys comparable to the expected ones for constantan wires were obtained.

  4. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  5. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies ...

  6. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction ...

  7. Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason M.; Kindvall, Anna; Williams, Desiree; Kuciauskas, Darius; Dippo, Pat; Munshi, Amit; Sampath, W. S.

    2018-03-01

    Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxide materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.

  8. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    Energy Technology Data Exchange (ETDEWEB)

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  9. Synthesis of nanoflakes-like shapes of zinc sulfide grown at room temperature by electrodeposition method

    Science.gov (United States)

    Patil, J. S.; Dhasade, S. S.; Babar, A. R.; Patil, Swati; Fulari, V. J.

    2015-07-01

    Zinc sulfide thin films were deposited on stainless steel and indium doped tin oxide substrates from an aqueous solution of ZnSO4, and Na2S2O3. This study reports the effect of bath conc. on the crystal structure, surface morphology, optical properties and compositional analysis of zinc sulfide nanostructured thin films. The electrodeposition time and bath concentration can be used to control the dimensions of the electrodeposited nanoflakes within nanometer range. Zinc sulfide thin films are polycrystalline with cubic crystal structure. SEM images indicate that the film surfaces are well-covered with zinc sulfide nanoflakes. The agglomeration of nanoflakes is enhanced due to the formation of large number of particles during growth process. A Raman shift of sample is detected at wave number 254 cm-1. Typical film deposited with optimized bath concentration shows optical band gap of about 3.83 eV.

  10. Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

    Science.gov (United States)

    Moore, Andrew

    Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

  11. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  12. [The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

    Science.gov (United States)

    Zhang, Li-xiang; Feng, Liang-huan; Wang, Wen-wu; Xu, Hang; Wu, Li-li; Zhang, Jing-quan; Li, Wei; Zeng, Guang-gen

    2015-02-01

    ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured. The effect of ZnS films prepared in different conditions on the performance of CdTe solar cells was researched. The effects of both CdS thickness and ZnS/CdS composite layer on the transmission in short wavelength were studied. Particularly, the quantum efficiency of CdTe solar cells with ZnS/CdS window layer was measured. The results show as follows. With the thickness of CdS window layer reducing from 100 to 50 nm, the transmission increase 18.3% averagely in short wavelength and the quantum efficiency of CdTe solar cells increase 27.6% averagely. The grain size of ZnS prepared in 250 degrees C is smaller than prepared at room temperature. The performance of CdTe solar cells with ZnS/CdS window layer is much better if ZnS deposited at 250 degrees C. This indicates grain size has some effect on the electron transportation. When the CdS holds the same thickness, the transmission of ZnS/CdS window layer was improved about 2% in short wavelength compared with CdS window layer. The quantum efficiency of CdTe solar cells with ZnS/CdS window layer was also improved about 2% in short wavelength compared with that based on CdS window layer. These indicate ZnS/CdS composite window layer can increase the photon transmission in short wavelength so that more photons can be absorbed by the absorbent layer of CdTe solar cells.

  13. One-step electrodeposition process of CuInSe2: Deposition time effect

    Indian Academy of Sciences (India)

    Administrator

    Electrodeposition; CuInSe2; deposition time; thin films. 1. Introduction. Chalcopyrite, CuInSe2, is considered one of the most im- portant semiconductors that can be used to make low-cost photovoltaic devices. It has high absorption coefficient. (> 105 cm–1) (Kavcar et al 1992; Huang et al 2004), rea- sonable work function ...

  14. Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

    Science.gov (United States)

    Colegrove, E.; Yang, J.-H.; Harvey, S. P.; Young, M. R.; Burst, J. M.; Duenow, J. N.; Albin, D. S.; Wei, S.-H.; Metzger, W. K.

    2018-02-01

    Fundamental material doping challenges have limited CdTe electro-optical applications. In this work, the As atomistic diffusion mechanisms in CdTe are examined by spatially resolving dopant incorporation in both single-crystalline and polycrystalline CdTe over a range of experimental conditions. Density-functional theory calculations predict experimental activation energies and indicate that As diffuses slowly through the Te sublattice and quickly along GBs similar to Sb. Because of its atomic size and associated defect chemistry, As does not have a fast interstitial diffusion component similar to P. Experiments to incorporate and activate P, As, and Sb in polycrystalline CdTe are conducted to examine if ex situ Group V doping can overcome historic polycrystalline doping limits. The distinct P, As, and Sb diffusion characteristics create different strategies for increasing hole density. Because fast interstitial diffusion is prominent for P, less aggressive diffusion conditions followed by Cd overpressure to relocate the Group V element to the Te lattice site is effective. For larger atoms, slower diffusion through the Te sublattice requires more aggressive diffusion, however further activation is not always necessary. Based on the new physical understanding, we have obtained greater than 1016 cm‑3 hole density in polycrystalline CdTe films by As and P diffusion.

  15. Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Yang, Ji-Hui; Harvey, Steven P.; Young, Matthew; Burst, James M.; Duenow, Joel N.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt

    2018-01-10

    Fundamental material doping challenges have limited CdTe electro-optical applications. In this work, the As atomistic diffusion mechanisms in CdTe are examined by spatially resolving dopant incorporation in both single-crystalline and polycrystalline CdTe over a range of experimental conditions. Density-functional theory calculations predict experimental activation energies and indicate As diffuses slowly through the Te sublattice and quickly along GBs similar to Sb. Because of its atomic size and associated defect chemistry, As does not have a fast interstitial diffusion component similar to P. Experiments to incorporate and activate P, As, and Sb in polycrystalline CdTe are conducted to examine if ex-situ Group V doping can overcome historic polycrystalline doping limits. The distinct P, As, and Sb diffusion characteristics create different strategies for increasing hole density. Because fast interstitial diffusion is prominent for P, less aggressive diffusion conditions followed by Cd overpressure to relocate the Group V element to the Te lattice site is effective. For larger atoms, slower diffusion through the Te sublattice requires more aggressive diffusion, however further activation is not always necessary. Based on the new physical understanding, we have obtained greater than 10^16 cm^-3 hole density in polycrystalline CdTe films by As and P diffusion.

  16. Electrodeposition of Cobalt Nanowires

    International Nuclear Information System (INIS)

    Ahn, Sungbok; Hong, Kimin

    2013-01-01

    We developed an electroplating process of cobalt nanowires of which line-widths were between 70 and 200 nm. The plating electrolyte was made of CoSO 4 and an organic additive, dimethyldithiocarbamic acid ester sodium salt (DAESA). DAESA in plating electrolytes had an accelerating effect and reduced the surface roughness of plated cobalt thin films. We obtained void-free cobalt nanowires when the plating current density was 6.25 mA/cm 2 and DAESA concentration was 1 mL/L

  17. Electrodeposition of engineering alloy coatings

    DEFF Research Database (Denmark)

    Christoffersen, Lasse

    Nickel based electrodeposited alloys were investigated with respect to their deposition process, heat treatment, hardness, corrosion resistance and combined wear-corrosion resistance. The investigated alloys were Ni-B, Ni-P and Ni-W, which are not fully developed for industrial utilisation...... at the moment. It was the intention of this study to investigate whether the mentioned alloy processes are able to substitute conventional deposition techniques for wear and corrosion resistance, namely Ni-P produced by electroless deposition and electrodeposited hard chromium. The considerations...... for substitution focussed on were increased deposition rates as well as improved corrosion and wear resistance.Some systems exhibited interesting deposition rates. Examples are 178 µm per hour of Ni-P(6), 85 µm per hour of Ni-P(15), 142 µm per hour of Ni-W(44) and 62 µm per hour of Ni-B(0.8) (weight percentages...

  18. The effect of different component ratios in block polymers and processing conditions on electrodeposition efficiency onto titanium

    Science.gov (United States)

    Fukuhara, Yusuke; Kyuzo, Megumi; Tsutsumi, Yusuke; Nagai, Akiko; Chen, Peng; Hanawa, Takao

    2015-11-01

    2-Methacryloyloxyethyl phosphorylcholine (MPC) polymers for electrodeposition to titanium surfaces were synthesized. The polymers were block-type copolymers composed of a poly(MPC) segment and a poly(2-aminoethylmethacrylate (AEMA)) segment, which could electronically adsorb to a titanium oxide film on the titanium surface. The polymer was synthesized as expected by nuclear magnetic resonance and gel permeation chromatography. In a 0.26 mmol L-1 PMbA solution adjusted to pH 11, -3.0 V (vs. an Ag/AgCl electrode) was applied to a titanium substrate for 300 s. We evaluated the effects of the molecular structure of poly(MPC-block-AEMA) (PMbA) with a different polymerization degree of MPC unit, whereas the polymerization degree of the AEMA units was fixed. The 15-min electrodeposition of PMbA100 was the most efficient condition in this study. On the other hand, the results of the water contact angle and the amount of adsorbed protein did not change, even when altering the MPC unit number and electrodeposition time. This indicates that the immobilization by electrodeposition of PMbA is important for the inhibition of protein adsorption, while the polymerization degree of the MPC unit and the electrodeposition time do not influence them. This study will enhance the understanding of effective polymer structures for electrodeposition and electrodeposition conditions.

  19. 2010 ELECTRODEPOSITION GORDON RESEARCH CONFERENCE, AUGUST 1-6, 2010

    Energy Technology Data Exchange (ETDEWEB)

    Peter Searson

    2010-08-06

    The 2010 Gordon Conference on Electrodeposition will present cutting-edge research on electrodeposition with emphasis on (i) advances in basic science, (ii) developments in next-generation technologies, and (iii) new and emerging areas. The Conference will feature a wide range of topics, from atomic scale processes, nucleation and growth, thin film deposition, and electrocrystallization, to applications of electrodeposition in devices including microelectronics, solar energy, and power sources. The Conference will bring together investigators from a wide range of scientific disciplines, including chemical engineering, materials science and engineering, physics, and chemistry. The Conference will feature invited speakers at the forefront of the field, and a late-breaking news session that will provide the opportunity for graduate students, post-docs, and junior faculty to participate. The collegial atmosphere of this Conference, with scientific talks and poster sessions, as well as opportunities for informal gatherings in the afternoons and evenings, provides an avenue for scientists from different disciplines to discuss current issues and promotes cross-disciplinary collaborations in the various research areas represented. The Conference will be held at Colby-Sawyer College, located in the Mt. Kearsarge-Lake Sunapee Region of New Hampshire. The surrounding mountains, forests, and lakes provide a beautiful setting for this conference. The attendance is limited so early application is strongly advised.

  20. Creep in an electrodeposited nickel

    Czech Academy of Sciences Publication Activity Database

    Sklenička, Václav; Kuchařová, Květa; Kvapilová, Marie; Svoboda, Milan; Král, Petr; Vidrich, G.

    2013-01-01

    Roč. 48, č. 13 (2013), s. 4780-4788 ISSN 0022-2461 R&D Projects: GA ČR(CZ) GAP108/11/2260; GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : nanocrystalline nickel * electrodeposited metals * nanocomposite * creep behavior * creep mechanisms Subject RIV: JG - Metallurgy Impact factor: 2.305, year: 2013

  1. Copper–zinc electrodeposition in alkaline-sorbitol medium: Electrochemical studies and structural, morphological and chemical composition characterization

    Energy Technology Data Exchange (ETDEWEB)

    Almeida, M.R.H. de [Faculdades Integradas Maria Imaculada, Rua Paula Bueno 240, Mogi Guaçu, SP (Brazil); Barbano, E.P.; Carvalho, M.F. de [Universidade Federal de São Carlos, Via Washington Luís km 235, São Carlos, SP (Brazil); Tulio, P.C. [Universidade Tecnológica Federal do Paraná, Av. Alberto Carazzai 1640, Cornélio Procópio, PR (Brazil); Carlos, I.A., E-mail: diac@ufscar.br [Universidade Federal de São Carlos, Via Washington Luís km 235, São Carlos, SP (Brazil)

    2015-04-01

    Highlights: • Cu–Zn electrodeposition was investigated galvanostatically. • Coloration of Cu–Zn films were whitish golden, light golden, golden/gray. • Electrodeposits produced from Cu70/Zn30 bath showed higher Cu content at lower j. • Scanning electron microscopy showed that Cu–Zn electrodeposits were fine-grained. • X-ray analysis of the Cu–Zn electrodeposits suggested a mixture of phases. - Abstract: The galvanostatic technique was used to analyze the electrodeposition of Cu–Zn on to AISI 1010 steel electrode from an alkaline-sorbitol bath with various proportions of the metal ions in the bath: Cu70/Zn30, Cu50/Zn50 and Cu30/Zn70. Coloration of Cu–Zn films were whitish golden, light golden, golden/gray depending on the Cu{sup 2+}/Zn{sup 2+} ratios in the electrodeposition bath, deposition current density (j{sub dep}) and charge density (q{sub dep}). The highest current efficiency was ∼54.0%, at j{sub dep} −1.0 mA cm{sup −2} and q{sub dep} 0.40 C cm{sup −2} in the Cu70/Zn30 bath. Energy dispersive spectroscopy indicated that electrodeposits produced from the bath Cu70/Zn30 showed higher Cu content at lower j{sub dep}. Also, for same j{sub dep} the Cu content increased with q{sub dep}. Scanning electron microscopy showed that Cu–Zn electrodeposits of high quality were obtained from the Cu70/Zn30 bath, since the films were fine-grained, except the obtained at j{sub dep} −20.0 mA cm{sup −2} and q{sub dep} 10.0 C cm{sup −2}. Also, these electrodeposits did not present cracks. X-ray analysis of the Cu–Zn electrodeposits obtained at j{sub dep} −8.0, −20.0 and −40.0 mA cm{sup −2}, in each case, with q{sub dep} 2.0 and 10.0 C cm{sup −2}, in the Cu70/Zn30 bath, suggested the occurrence of a mixture of the following phases, CuZn, CuZn{sub 5} and Cu{sub 5}Zn{sub 8}. Galvanostatic electrodeposits of Cu–Zn obtained from sorbitol-alkaline baths exhibited whitish golden color, with good prospects for industrial applications

  2. Epitaxial electrodeposition of ZnO on Au(111) from alkaline solution: exploiting amphoterism in Zn(II).

    Science.gov (United States)

    Limmer, Steven J; Kulp, Elizabeth A; Switzer, Jay A

    2006-12-05

    The amphoteric nature of ZnO is used to produce the material from strongly alkaline solution. The solution pH is lowered globally to produce ZnO powder, and it is lowered locally at a Au(111) surface to produce epitaxial films. ZnO powder is precipitated from a solution of 10 mM Zn(II) in 0.25 M NaOH by simply adding 1 M HNO3 to the solution. For the film electrodeposition, the local pH at the electrode surface is decreased by electrochemically oxidizing the ascorbate dianion. The chemically precipitated ZnO powder grows with a sea urchin-like nanostructure, whereas the electrodeposited films have a columnar structure. ZnO electrodeposited onto a Au(111) single crystal has a ZnO(0001)[1011]//Au(111)[110] orientation relationship.

  3. Tuning the electrodeposition parameters of silver to yield micro/nano structures from room temperature protic ionic liquids

    International Nuclear Information System (INIS)

    Suryanto, Bryan H.R.; Gunawan, Christian A.; Lu Xunyu; Zhao Chuan

    2012-01-01

    Controlled electrodeposition of silver onto glassy carbon, gold and indium tin oxide-coated glass substrates has been achieved from three room temperature protic ionic liquids (PILs), ethylammonium nitrate, triethylammonium methylsulfonate, and bis(2-methoxyethyl)ammonium acetate. Cyclic voltammetric, chronoamperometric, together with microscopic and X-ray techniques reveal that micro/nanostructured Ag thin films of controlled morphology, size, density, and uniformity can be achieved by tuning the electrodeposition parameters such as potential, time, types of PILs, substrate materials, and ionic liquid viscosity by altering the water content. Chronoamperometric results provide direct evidence that electrodeposition of Ag in protic ionic liquids takes place through a progressive nucleation and diffusion-controlled 3D growth mechanism. The as prepared Ag micro/nanoparticles have been employed as electrocatalysts for oxygen reduction reaction and exhibit excellent catalytic activity. The study provides promise for using protic ionic liquids as alternative electrolytes to conventional aprotic ionic liquids for electrodeposition of metals and nanostructured electrocatalysts.

  4. Crystallographic orientations and twinning of electrodeposited nickel

    DEFF Research Database (Denmark)

    Alimadadi, Hossein; da Silva Fanta, Alice Bastos; Somers, Marcel A. J.

    2014-01-01

    A series of nickel layers was electrodeposited at different current densities from a Watts type electrolyte containing the additive 2-butyne-1,4-diol in various concentrations. The internal structure of the nickel electrodeposits was systematically investigated applying complementary microscopic...

  5. On texture formation of chromium electrodeposits

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Leisner, Peter; Horsewell, Andy

    1998-01-01

    The microstructure, texture and hardness of electrodeposited hard, direct current (DC) chromium and pulsed reversed chromium has been investigated. These investigations suggest that the growth and texture of hard chromium is controlled by inhibition processes and reactions. Further, it has been...... established that codeposition of Cr2O3 nanoparticles is a general feature of DC chromium electrodeposition....

  6. Influence of pulse electrodeposition parameters on microhardness ...

    Indian Academy of Sciences (India)

    and fine globular. Also, effect of electrodeposition parameters such as average current density, pulse frequency and duty cycle on the microhardness and grain size of nanocomposite coatings that produced through the pulse current electrodeposition method have been investigated. By amplifying both duty cycles up to 50% ...

  7. Cationic electrodepositable coating composition comprising lignin

    Science.gov (United States)

    Fenn, David; Bowman, Mark P; Zawacky, Steven R; Van Buskirk, Ellor J; Kamarchik, Peter

    2013-07-30

    A cationic electrodepositable coating composition is disclosed. The present invention in directed to a cationic electrodepositable coating composition comprising a lignin-containing cationic salt resin, that comprises (A) the reaction product of: lignin, an amine, and a carbonyl compound; (B) the reaction product of lignin, epichlorohydrin, and an amine; or (C) combinations thereof.

  8. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    Directory of Open Access Journals (Sweden)

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  9. Electrochemical corrosion measurements on noble electrodeposits

    DEFF Research Database (Denmark)

    Christoffersen, Lasse; Maahn, Ernst Emanuel

    1998-01-01

    Novel electrodeposits are compared with hard chrome and electroless Ni-P with respect to production, corrosion resistance and hardness.......Novel electrodeposits are compared with hard chrome and electroless Ni-P with respect to production, corrosion resistance and hardness....

  10. Theory and practice of metal electrodeposition

    CERN Document Server

    Gamburg, Yuliy D

    2011-01-01

    fills the gap between modern developments in electrochemistry and outdated information on metals electrodeposition currently available in competing titles essential information on the theoretical and practical electrochemistry necessary to investigate modern metal deposition is provided part of the growing literature on electrodeposition

  11. Cyclic Voltammetric Study of High Speed Silver Electrodeposition and Dissolution in Low Cyanide Solutions

    Directory of Open Access Journals (Sweden)

    Bo Zheng

    2016-01-01

    Full Text Available The electrochemical processes in solutions with a much lower amount of free cyanide (<10 g/L KCN than the conventional alkaline silver electrolytes were first explored by using cyclic voltammetry. The electrochemical behavior and the effect of KAg(CN2, KCN, and KNO3 electrolytes and solution pH on the electrodeposition and dissolution processes were investigated. Moreover, suitable working conditions for high speed, low cyanide silver electrodeposition were also proposed. Both silver and cyanide ions concentration had significant effects on the electrode polarization and deposition rate. The onset potential of silver electrodeposition could be shifted to more positive values by using solutions containing higher silver and lower KCN concentration. Higher silver concentration also led to higher deposition rate. Besides maintaining high conductivity of the solution, KNO3 might help reduce the operating current density required for silver electrodeposition at high silver concentration albeit at the expense of slowing down the electrodeposition rate. The silver dissolution consists of a limiting step and the reaction rate depends on the amount of free cyanide ions. The surface and material characteristics of Ag films deposited by low cyanide solution are also compared with those deposited by conventional high cyanide solution.

  12. Preparation and characterization of electrodeposited cobalt nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

    2014-10-24

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.

  13. Structure investigations of electrodeposited nickel

    Energy Technology Data Exchange (ETDEWEB)

    Vertes, A.; Czako-Nagy, I.; Lakatos-Varsani, M. (Eoetvoes Lorand Tudomanyegyetem, Budapest (Hungary). Dept. of Physical Chemistry); Kajcsos, Z. (Hungarian Academy of Sciences, Budapest. Central Research Inst. for Physics); Csordas, L. (Eoetvoes Lorand Tudomanyegyetem, Budapest (Hungary). Dept. of Solid State Physics); Brauer, G. (Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic)); Leidheiser, H. Jr. (Lehigh Univ., Bethlehem, PA (USA). Center for Surface and Coatings Research)

    1982-08-01

    Nickel, electrodeposited under different conditions and yielding different values of stress, was investigated by positron annihilation (lifetime and Doppler-broadening), Moessbauer effect and X-ray diffraction measurements. Two-component positron lifetime spectra were obtained. The first component is thought to result from bulk annihilation and trapping at single trapping centres (TC). Estimations of TC-concentrations are obtained by means of the trapping model. The second one possibly denotes annihilation at voids, the number of which is dependent on the stress in the deposit. Results of Doppler-broadening measurements support this interpretation. The Moessbauer results show differences in the magnetic orientation in the three samples examined.

  14. Electrodeposition of composite materials containing functionalized carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Casagrande, T.; Lawson, G.; Li, H.; Wei, J.; Adronov, A. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L7 (Canada); Zhitomirsky, I. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L7 (Canada)], E-mail: zhitom@mcmaster.ca

    2008-09-15

    New methods have been developed for the synthesis and electrodeposition of functionalized single-walled carbon nanotubes (f-SWNTs). Polystyrene sulfonate functionalized nanotubes (PSS-f-SWNTs) and poly(ethylene imine) functionalized nanotubes (PEI-f-SWNTs) were co-deposited with cationic chitosan macromolecules. It was shown that chitosan promotes cathodic deposition of anionic PSS-f-SWNTs. The strategies for charging and electrodeposition of PEI-f-SWNTs include partial protonation of PEI in acidic chitosan solutions or formation of cationic Ag{sup +}-PEI complexes. The thickness of chitosan-PSS-f-SWNTs and chitosan-PEI-f-SWNTs composite films was varied in the range of up to 0.5-5 {mu}m. The amount of f-SWNTs in the deposits was varied by controlling the SWNT concentration in the solutions. It was shown that the use of chitosan enabled co-deposition of other materials, such as hydroxyapatite (HA). The proposed method enabled the fabrication of composite films.

  15. Electrodeposition properties of modified cational epoxy resin-type photoresist

    International Nuclear Information System (INIS)

    Yong He; Yunlong Zhang; Feipeng Wu; Miaozhen Li; Erjian Wang

    1999-01-01

    Multi-component cationic epoxy and acrylic resin system for ED photoresist was used in this work, since they can provide better storage stability for ED emulsion and better physical and chemical properties of deposited film than one-component system. The cationic main resin (AE) was prepared from amine modified epoxy resins and then treated with acetic acid. The amination degree was controlled as required. The synthetic procedure of cationic main resins is described in scheme I. The ED photoresist (AME) is composed of cationic main resin (AE) and nonionic multifunctional acrylic crosslinkers (PETA), in combination with suitable photo-initiator. They can easily be dispersed in deionized water to form a stable ED emulsion. The exposed part of deposited film upon UV irradiation occurs crosslinking to produce an insoluble semi-penetrating network and the unexposed part remains good solubility in the acidic water solution. It is readily utilized for fabrication of fine micropattern. The electrodeposition are carried out on Cu plate at room temperature. To evaluate the electrodeposition properties of ED photoresist (AME), the different influences are examined

  16. Preparation of 235U target by electrodeposition

    International Nuclear Information System (INIS)

    Chen Qiping; Zhong Wenbin; Li Yougen

    2004-12-01

    A target for the production of fission 99 Mo in a nuclear reactor is composed of an enclosed, cylindrical vessel. Preferable vessel is comprised of stainless steel, having a thin, continuous, uniform layer of 235 U integrally bonded to its inner walls. Two processes are introduced for electrodepositing uranium on to the inner walls of the vessel. One processes is electrodepositing UO 2 from UO 2 (NO 3 ) 2 -(NH 4 ) 2 CO 4 ·H 2 O solution; the other is electrodepositing pure uranium metal from molten salt. Its plating efficiency and plating quantity from a molten bath is higher than UO 2 from the aqueous system. (authors)

  17. Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

    International Nuclear Information System (INIS)

    Jayapalan, A.; Tetali, B.; Ferekides, C.S.; Marinskiy, D.; Morel, D.L.; Lin, H.; Sankaranarayanan, H.; Bhatt, R.; Narayanaswamy, R.; Prabhakaran, R.; Marinskaya, S.; Zafar, S.

    1999-01-01

    This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments

  18. Recycling of CdTe photovoltaic waste

    Science.gov (United States)

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  19. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  20. Electrodeposition of dicalcium phosphate dihydrate coatings on ...

    Indian Academy of Sciences (India)

    /fulltext/boms/036/03/0475-0481. Keywords. Electrodeposition; orientation; DCPD; hydroxyapatite. Abstract. Cathodic reduction of an aqueous solution containing dissolved calcium and phosphate ions results in the deposition of micrometer ...

  1. Variation of resistivity of copper doped cadmium telluride prepared by electrodeposition

    International Nuclear Information System (INIS)

    von Windheim, J.A.; Cocivera, M.

    1990-01-01

    Thin film cadmium telluride is an attractive material because its band gap makes it suitable for a number of applications. The authors have prepared this material by electrodeposition both in the dark and under illumination. The resultant films, which are p-type as deposited and after heat treatment, have been used with electrodeposited cadmium sulfide to form pn junction photovoltaic cells. Light-to-electric power conversion efficiencies for a number of samples average around 3.5%. To increase this efficiency, the authors have initiated a program to reduce film resistivity by the incorporation of dopants using electrochemical and vapour techniques. The electrical characterization of electrodeposited thin film materials by Hall effect or resistance measurements is difficult because the sample must be removed from the conducting substrate before studies can be done. In this paper, results are presented for copper incorporated by two methods, electrochemical codeposition and electromigration and the effect is discussed in terms of a model in which the conductivity is controlled by the relative magnitudes of the dopant density and the density of interface states at the grain boundary

  2. Pulsed electrodeposition of Cu{sub 2}ZnSnS{sub 4} absorber layer precursor for photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhari, Sushmita, E-mail: ms12p0005@iith.ac.in; Palli, Srinivas, E-mail: ms10p004@iith.ac.in; Kannan, P.K., E-mail: ms13p1002@iith.ac.in; Dey, Suhash R., E-mail: suhash@iith.ac.in

    2016-02-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS), comprising of earth abundant and non-toxic elements, is an ecofriendly and cost effective thin film absorber layer for solar cell applications. The present work describes the fabrication of p-type absorber material Cu{sub 2}ZnSnS{sub 4} (CZTS) from alkaline pyrophosphate solution through pulsed electrodeposition (PED) at room temperature. CZTS thin film is prepared from one step co-electrodeposited Cu–Sn–Zn (CZT) precursor film obtained from pyrophosphate bath under potentiostatic condition (− 1.4 V) onto a Ni substrate followed by annealing in sulfur atmosphere at 500 °C for 1 h and 30 min. To achieve the desired CZTS stoichiometry in the deposited material, applied potential for the co-deposition has been calculated from the Tafel plots. The crystallographic phases, morphology and composition of the electrodeposited Cu–Sn–Zn precursor and the sulfurized films are assessed through X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS), respectively. Formation of CZTS phase is confirmed from X-ray diffraction and Raman spectroscopy of the sulfurized sample. Optical band gap measurement is investigated by using UV–Vis absorption spectroscopy. The CZTS thin film of kesterite structure is obtained with a band gap of 1.5 eV, which is suitable for solar cell fabrication. - Highlights: • Potentiostatic pulse plated CZT precursor film from pyrophosphate bath • Fabricated CZTS film from sulfurization of co-electrodeposited CZT precursor film • Kesterite structured CZTS film with secondary phases is observed. • Amount of secondary phases is reduced by increasing the annealing time. • Obtained bandgap of CZTS films is 1.5 eV, suitable for solar cell applications.

  3. Electrodeposition and surface finishing fundamentals and applications

    CERN Document Server

    Djokic, Stojan

    2014-01-01

    This volume of Modern Aspects of Electrochemistry has contributions from significant individuals in electrochemistry. This 7 chapter book discusses electrodeposition and the characterization of alloys and composite materials, the mechanistic aspects of lead electrodeposition, electrophoretic deposition of ceramic materials onto metal surfaces and the fundamentals of metal oxides for energy conversion and storage technologies. This volume also has a chapter devoted to the anodization of aluminum, electrochemical aspects of chemical and mechanical polishing, and surface treatments prior to metal

  4. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  5. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  6. SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

    African Journals Online (AJOL)

    Preferred Customer

    ABSTRACT. L-Cysteine (Cys)-capped CdTe quantum dots (QDs) were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL) quantum ...

  7. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    OpenAIRE

    Teyou Ngoupo, A.; Ouédraogo, S.; Zougmoré, F.; Ndjaka, J. M. B.

    2015-01-01

    Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O l...

  8. Depth profile analysis of electrodeposited nanoscale multilayers by Secondary Neutral Mass Spectrometry (SNMS)

    International Nuclear Information System (INIS)

    Katona, G.L.; Berenyi, Z.; Vad, K.; Peter, L.

    2006-01-01

    Complete text of publication follows. Nanoscale multilayers have been in the focus of research since the discovery of the giant magnetoresistance (GMR) effect in this family of nanostructures. The first observation of GMR on sputtered magnetic/non-magnetic multilayers was followed by the detection of the same effect in electrodeposited Co-Ni-Cu/Cu multilayers within half a decade. Electrodeposition has long been considered as an inexpensive alternative of the high-vacuum methods to produce multilayers with GMR, although the GMR effect observed for electrodeposited multilayers is usually inferior to multilayers produced by physical methods. Electrochemistry appears to be an exclusive technology to produce multilayered nanowires by using porous templates. In spite of the large number of papers about the multilayers themselves, data on the depth profile of electrodeposited multilayer samples are very scarce. It has long been known that the simultaneous electrodeposition of the iron group metals takes place in the so-called anomalous manner. The diagnostic criterion of the anomalous codeposition is that the metallic component of lower standard potential (the Co in the case of Ni/Co) can be discharged together with the more noble one (Ni) at potentials where the less noble component (Co) alone cannot be deposited onto a substrate composed of the parent metal; moreover, the less noble metal (Co) is deposited preferentially. We have investigated the composition gradient along the growth direction of electrodeposited Co/Cu and CoNiCu/Cu multilayers films using SNMS. Samples were electrodeposited using the single bath method. Commercial Cu sheets and an Cr/Cu layer evaporated onto Si (111) surface were used as substrates with high and low roughness, respectively. The depth profiles of the samples were recorded using SNMS (INA-X, Specs GmbH, Berlin) in the Direct Bombardment Mode. Depth profile analysis of electrodeposited magnetic/nonmagnetic layered structures on

  9. Microscopic and magnetic properties of template assisted electrodeposited iron nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my; Yar, A., E-mail: asfandyarhargan@gmail.com [Department of Fundamental & Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

    2015-07-22

    Nanowires of magnetic materials such as Iron, nickel, cobalt, and alloys of them are one of the most widely investigated structures because of their possible applications in high density magnetic recording media, sensor elements, and building blocks in biological transport systems. In this work, Iron nanowires have been prepared by electrodeposition technique using Anodized Aluminium Oxide (AAO) templates. The electrolyte used consisted of FeSO{sub 4.}6H{sub 2}O buffered with H{sub 3}BO{sub 3} and acidized by dilute H{sub 2}SO{sub 4}. FESEM analysis shows that the asdeposited nanowires are parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. To fabricate the working electrode, a thin film of copper (∼ 220 nm thick) was coated on back side of AAO template by e-beam evaporation system to create electrical contact with the external circuit. The TEM results show that electrodeposited nanowires have diameter around 100 nm and are polycrystalline in structure. Magnetic properties show the existence of anisotropy for in and out of plane configuration. These nanowires have potential applications in magnetic data storage, catalysis and magnetic sensor applications.

  10. Integration of vanadium-mixed addenda Dawson heteropolytungstate within poly(3,4-ethylenedioxythiophene) and poly(2,2'-bithiophene) films by electrodeposition from the nonionic micellar aqueous medium

    Energy Technology Data Exchange (ETDEWEB)

    Goral, Monika [Department of Chemistry, University of Warsaw, Pasteura 1, 02-093 Warsaw (Poland); Jouini, Mohamed, E-mail: jouini@univ-paris-diderot.f [Laboratory Interfaces, Traitements, Organisation et DYnamique des Systemes (ITODYS) UMR 7086, Universite Paris Diderot Paris 7 Batiment Lavoisier, 15 Rue Jean Antoine de Baif, 75205 Paris Cedex 13 (France); Perruchot, Christian [Laboratory Interfaces, Traitements, Organisation et DYnamique des Systemes (ITODYS) UMR 7086, Universite Paris Diderot Paris 7 Batiment Lavoisier, 15 Rue Jean Antoine de Baif, 75205 Paris Cedex 13 (France); Miecznikowski, Krzysztof; Rutkowska, Iwona A. [Department of Chemistry, University of Warsaw, Pasteura 1, 02-093 Warsaw (Poland); Kulesza, Pawel J., E-mail: pkulesza@chem.uw.edu.p [Department of Chemistry, University of Warsaw, Pasteura 1, 02-093 Warsaw (Poland)

    2011-04-01

    A comparative study describing immobilization of the Dawson type mixed addenda heteropolyanion, [P{sub 2}W{sub 17}VO{sub 62}]{sup 8-} into conducting polymer films of poly(3,4-ethylenedioxythiophene), PEDOT, and poly(2,2'-bithiophene), PBT, is reported. Electrosynthesis of these hybrid films was performed using a micellar aqueous solution of the nonionic surfactant, polyethylene glycol tert-octylphenyl ether (Triton X-100). Deposited composite films were characterised electrochemically and, on the whole, they exhibited fast electron transfer (ET) properties and relatively high stability towards continuous potential cycling in acidic media. In particular, PEDOT composite showed relatively faster ET properties in comparison to PBT composite. Their permeability was investigated in the presence of cationic and anionic redox probes. Our results implied good mediating capabilities of the [P{sub 2}W{sub 17}V{sup 4+}O{sub 62}]{sup 8-} anion (within the [P{sub 2}W{sub 17}V{sup 4+}O{sub 62}]{sup 8-}-PEDOT hybrid film) towards the iron (III) reduction. The specific electrocatalytic (reductive) capabilities of hybrid films were also studied by probing the reduction of bromate. The films were further characterised by X-ray photoelectron spectroscopy to establish their interfacial elemental composition. Moreover, their surface morphology was imaged by atomic force microscopy and scanning electron microscopy. Results have shown that physicochemical properties of the investigated hybrid films were affected by polymer hydrophobicity.

  11. 2008 Gordon Research Conference on Electrodeposition [Conference summary report

    Energy Technology Data Exchange (ETDEWEB)

    Moffat, Thomas P.; Gray, Nancy Ryan

    2009-01-01

    Electrodeposition melds key aspects of electrochemistry and materials science. In the last decade the advent of a variety of remarkable in situ characterization methods combined with the ever expanding application of wet chemical processing in high end technological endeavors has transformed the nature of the field. The 'old black magic' is giving way to the rigors of science as the electrodeposition process plays a central role in the fabrication of state-of-the-art ULSI and MEMS devices as well as being a key tool in the fabrication of novel materials and nanostructures. This year the conference will consider several timely issues such as how electrodeposition can contribute to the effective production of energy conversion devices, ranging from solar collectors to fuel cell electrocatalysts. Likewise, the challenge of building contacts and interconnects for next generation electronics will be examined over length scales ranging from individual atoms or molecules to chip stacking. Electrochemical fabrication of magnetic materials and devices as well as composite materials will also be discussed. Nucleation and growth phenomena underlie all aspect of electrochemical deposition and this year's meeting will consider the effect of both adsorbates and stress state on morphological evolution during thin film growth. A variety of new measurement methods for studying the growing electrode/electrolyte interface will also be detailed. In addition to the scheduled talks a session of short talks on late breaking news will be held Wednesday evening. There will also be at least two lively poster sessions that are essential elements of the conference and to which all attendees are encouraged to contribute. This will be 7th Electrodeposition GRC and based on past experience it is the premier 'mixing bowl' where young investigators and international experts have an extended opportunity to interact in a fun and collegial atmosphere. The afternoons provide

  12. Solution-Processed Efficient Nanocrystal Solar Cells Based on CdTe and CdS Nanocrystals

    Directory of Open Access Journals (Sweden)

    Songwei Liu

    2018-01-01

    Full Text Available Solution-processed CdTe nanocrystals solar cells have attracted much attention due to their low cost, low material consumption, and potential for roll-to-roll production. Among all kinds of semiconductor materials, CdS exhibits the lowest lattice mismatch with CdTe, which permits high junction quality and high device performance. In this study, high quality CdS nanocrystals were prepared by a non-injection technique with tetraethylthiuram disufide and 2,2′-dithiobisbenzothiazole as the stabilizers. Based on the CdTe and CdS nanocrystals, devices with the architecture of ITO/ZnO/CdS/CdTe/MoOx/Au were fabricated successfully by a solution process under ambient condition. The effects of annealing conditions, film thickness, and detailed device structure on the CdTe/CdS nanocrystal solar cells were investigated and discussed in detail. We demonstrate that high junction quality can be obtained by using CdS nanocrystal thin film compared to traditional CdS film via chemical bath deposition (CBD. The best device had short circuit current density (Jsc, open circuit voltage (Voc and fill factor (FF of 17.26 mA/cm2, 0.56 V, and 52.84%, respectively, resulting in a power conversion efficiency (PCE of 5.14%, which is significantly higher than that reported using CBD CdS as the window layer. This work provides important suggestions for the further improvement of efficiency in CdTe nanocrystal solar cells.

  13. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  14. Laser applications in thin-film photovoltaics

    OpenAIRE

    Bartlome, R.; Strahm, B.; Sinquin, Y.; Feltrin, A.; Ballif, C.

    2009-01-01

    We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are descri...

  15. Technology support for initiation of high-throughput processing of thin-film CdTe PV modules. Phase 3 final technical report, 14 March 1997--1 April 1998

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R.C.; Dorer, G.L.; Jayamaha, U.; Hanak, J.J. [Solar Cells, Inc., Toledo, OH (United States)

    1998-09-01

    Thin-film PV devices based on cadmium telluride have been identified as one of the candidates for high-performance, low-cost source of renewable electrical energy. Roadblocks to their becoming a part of the booming PV market growth have been a low rate of production and high manufacturing cost caused by several rate-limiting process steps. Solar Cells Inc. has focused on the development of manufacturing processes that will lead to high volume and low-cost manufacturing of solar cells and on increasing the performance of the present product. The process research in Phase 3 was concentrated on further refinement of a newly developed vapor transport deposition (VTD) process and its implementation into the manufacturing line. This development included subsystems for glass substrate transport, continuous feed of source materials, generation of source vapors, and uniform deposition of the semiconductor layers. As a result of this R and D effort, the VTD process has now achieved a status in which linear coating speeds in excess of 8 ft/min have been achieved for the semiconductor, equal to about two modules per minute, or 144 kW per 24 hour day. The process has been implemented in a production line, which is capable of round-the-clock continuous production of coated substrates 120 cm x 60 cm in size at a rate of 1 module every four minutes, equal to 18 kW/day. Currently the system cycle time is limited by the rate of glass introduction into the system and glass heating, but not by the rate of the semiconductor deposition. A new SCI record efficiency of 14.1% has been achieved for the cells.

  16. Electrodeposition of silver nanoparticle arrays on transparent conductive oxides

    International Nuclear Information System (INIS)

    Zhang, Dezhong; Tang, Yang; Jiang, Fuguo; Han, Zhihua; Chen, Jie

    2016-01-01

    Highlights: • The sliver nanoparticles' size and the distance between nanoparticles are tunable. - Abstract: In this paper, we present a facile method for the preparation of silver nanoparticles on aluminum-doped zinc oxide (AZO) via electrodeposition techniques at room temperature. The morphology and structure of silver nanoparticles are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), respectively. Due to localized surface plasmon resonances, as-prepared silver nanoparticles on AZO glass exhibited different reflectivity in contrast with bare AZO glass. The weighted reflection of AZO substrate increased from 10.2% to 12.8%. The high reflection property of silver nanoparticle arrays on AZO substrate might be applicable for thin film solar cells and other optoelectronics applications.

  17. Electrodeposition of silver nanoparticle arrays on transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dezhong; Tang, Yang, E-mail: tangyang@nicenergy.com; Jiang, Fuguo; Han, Zhihua; Chen, Jie

    2016-04-30

    Highlights: • The sliver nanoparticles' size and the distance between nanoparticles are tunable. - Abstract: In this paper, we present a facile method for the preparation of silver nanoparticles on aluminum-doped zinc oxide (AZO) via electrodeposition techniques at room temperature. The morphology and structure of silver nanoparticles are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), respectively. Due to localized surface plasmon resonances, as-prepared silver nanoparticles on AZO glass exhibited different reflectivity in contrast with bare AZO glass. The weighted reflection of AZO substrate increased from 10.2% to 12.8%. The high reflection property of silver nanoparticle arrays on AZO substrate might be applicable for thin film solar cells and other optoelectronics applications.

  18. Investigation of bearing inner ring-cage thermal characteristics based on CdTe quantum dots fluorescence thermometry

    International Nuclear Information System (INIS)

    Yan, Ke; Yan, Bei; Li, Ben Q.; Hong, Jun

    2017-01-01

    Highlights: • A novel method for bearing inner ring/cage thermal monitoring was first presented. • Temperature rise of bearing inner ring in real work condition was obtained. • The rotation speed (6000 r/min) measured here is much higher than all the existing methods. - Abstract: A novel wireless temperature sensor and non-intrusive temperature measurement method for bearing monitoring were proposed in this paper, based on spectrum parameter analysis of CdTe quantum dots films. The CdTe QDs were synthesized and were used in constructing of a sensor film by means of Layer-by-layer Electrostatic Self-assembly method. The fluorescence spectrum properties of the sensor were characterized. At rotation speed 5000–6000 r/min, bearing cage and inner ring temperature were presented first in this paper by the CdTe QDs sensor. The results were verified by theoretical analysis and by thermocouples, with an error typically below 10% or smaller. Compared to the traditional outer ring monitoring, the measurement and monitoring of bearing rolling elements is of very importance, especially at high rotation speed.

  19. Electrodeposition of gallium for photovoltaics

    Science.gov (United States)

    Bhattacharya, Raghu N.

    2016-08-09

    An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.

  20. Aqueous electrodeposition of Ge monolayers.

    Science.gov (United States)

    Liang, Xuehai; Kim, Youn-Geun; Gebergziabiher, Daniel K; Stickney, John L

    2010-02-16

    The electrodeposition of germanium on Au(111) in aqueous solutions has been investigated by means of cyclic voltammetry, Auger electron spectroscopy, and in situ scanning tunneling microscopy (STM). The data yield a picture of germanium deposition, which starts with the formation of two well-ordered hydroxide phases, with 1/3 ML and 4/9 ML coverages upon initial reduction of the Ge(IV) species (probably H(2)GeO(3) at pH 4.7). Those structures appear to result from a three-electron reduction to form surface-limited structures with (square root(3) x square root(3))R30 degrees or (3 x 3) unit cells, respectively. Further reduction, probably in a two-electron process from the hydroxide structures, resulted in a germanium hydride structure, again surface-limited, with a coverage of close to 0.8 ML. The hydride structure is very flat, though with the periodic modulation characteristic of a Moiré pattern. Longer deposition times and lower potentials resulted in increased coverage of Ge in some cases, but with apparently limited coverage as a function of pH. The maximum Ge coverage, about 4 ML, was observed using a pH 9.32 deposition solution. At potentials negative of the Moiré pattern, about -850 mV versus Ag/AgCl, a "corruption" of the smooth Moiré pattern occurred. This roughening appears to mark the initial formation of a Au-Ge alloy, accounting for the observation of coverage in excess of that needed to form the Moiré pattern at some pH values.

  1. The electrodeposition of multilayers on a polymeric substrate in flexible organic photovoltaic solar cells

    Science.gov (United States)

    Guedes, Andre F. S.; Guedes, Vilmar P.; Souza, Monica L.; Tartari, Simone; Cunha, Idaulo J.

    2015-09-01

    Flexible organic photovoltaic solar cells have drawn intense attention due to their advantages over competing solar cell technologies. The method utilized to deposit as well as to integrate solutions and processed materials, manufacturing organic solar cells by the Electrodeposition System, has been presented in this research. In addition, we have demonstrated a successful integration of a process for manufacturing the flexible organic solar cell prototype and we have discussed on the factors that make this process possible. The maximum process temperature was 120°C, which corresponds to the baking of the active polymeric layer. Moreover, the new process of the Electrodeposition of complementary active layer is based on the application of voltage versus time in order to obtain a homogeneous layer with thin film. This thin film was not only obtained by the electrodeposition of PANI-X1 on P3HT/PCBM Blend, but also prepared in perchloric acid solution. Furthermore, these flexible organic photovoltaic solar cells presented power conversion efficiency of 12% and the inclusion of the PANI-X1 layer reduced the effects of degradation on these organic photovoltaic panels induced by solar irradiation. Thus, in the Scanning Electron Microscopy (SEM), these studies have revealed that the surface of PANI-X1 layers is strongly conditioned by the dielectric surface morphology.

  2. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    SEM) and transmission electron microscope (TEM) to observe their morphology and distribution, respectively. The selective area electronic diffraction (SAED) pattern proved that the CdTe NPs were cubic lattice. The PL spectrum indicated that ...

  3. Interaction of porphyrins with CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)

    2011-05-13

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  4. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  5. Magnetic field effects on the electrodeposition of CoNiMo alloys

    Science.gov (United States)

    Aaboubi, Omar; Msellak, Khalid

    2017-02-01

    In this work we have examined the influence of applying homogeneous magnetic field (MF) up to 1.2T, on Cobalt- Nickel-Molybdenum (CoNiMo) alloys electrodeposition from citric bath. The surface morphology, chemical composition and the crystallographic texture has been investigated by X-ray diffraction (XRD), X-ray composition mapping and scanning electron microscopy (SEM) images. The mass transport behaviour during the electrodeposition process has been examined through the polarization curves and electrochemical impedance methods. As expected, under MF control an enhancement in the mass transport rate was observed leading to grains refinement and homogeneous distribution of the Co, Mo and Ni atoms in the obtained CoNiMo films. These findings highlight the synergistic combination of Ni, Co and Mo by promoting the MHD convection due to the Lorentz force acting during the Ni(II) and Co(II) ions reduction.

  6. Real-time observation of Zn electro-deposition with high-resolution microradiology

    CERN Document Server

    Tsai, W L; Hwu, Y; Chen, C H; Chang, L W; Je, J H; Margaritondo, G

    2003-01-01

    We used phase contrast radiography to study the electro-deposition of Zn in real time and with high lateral resolution. Using unmonochromatic synchrotron X-rays and an optics-less imaging setup, we were able to obtain real-time radiographs of the electro-deposition in situ with mu m resolution. A detailed analysis of the microstructure evolution relates the different growth parameters - such as the electric current density, the voltage bias, the pH value and the ion concentration - to very different growth morphology, ranging from film, porous, whisker and dendrite deposition. This link is both global and local. Local variations of the metal ion concentration in the electrolyte were also successfully imaged and the density profile is used to compare with the standard theory to explain the phenomenon of metal ion depletion near the electrode. The potential application of this technique to study growth with micropatterned electrodes and pulsed electric current is evaluated.

  7. Surface morphology and corrosion resistance of electrodeposited ...

    Indian Academy of Sciences (India)

    Administrator

    Surface morphology and corrosion resistance of electrodeposited composite coatings containing polyethylene or polythiophene in. Ni–Mo base. J NIEDBAŁA. Institute of Materials Science, University of Silesia, 40-007 Katowice, ul. Bankowa 12, Poland. MS received 11 December 2009; revised 30 April 2010. Abstract.

  8. Methods for Electrodepositing Composition-Modulated Alloys

    DEFF Research Database (Denmark)

    Leisner, Peter; Nielsen, Christian Bergenstof; Tang, Peter Torben

    1996-01-01

    Materials exhibiting unique mechanical, physical and chemical properties can be obtained by combining thin layers of different metals or alloys forming a multilayered structure. Two general techniques exist for electrodepositing composition-modulated alloy (CMA) materials; dual-bath and single...

  9. Electrodeposition of dicalcium phosphate dihydrate coatings on ...

    Indian Academy of Sciences (India)

    By using this method, it is possible to fabricate coatings on irregular objects, control the morphology and orienta- ... During electrodeposition, temperature of the bath was maintained at 45. ◦. C (IKA ETS-D5 Heater). .... At high currents, the deposition process enters the regime of kinetic control, leading to the growth of planes ...

  10. Electrodeposition of zinc--nickel alloys coatings

    Energy Technology Data Exchange (ETDEWEB)

    Dini, J W; Johnson, H R

    1977-10-01

    One possible substitute for cadmium in some applications is a zinc--nickel alloy deposit. Previous work by others showed that electrodeposited zinc--nickel coatings containing about 85 percent zinc and 15 percent nickel provided noticeably better corrosion resistance than pure zinc. Present work which supports this finding also shows that the corrosion resistance of the alloy deposit compares favorably with cadmium.

  11. A low-cost non-toxic post-growth activation step for CdTe solar cells

    Science.gov (United States)

    Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

    2014-07-01

    Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

  12. Aqueous synthesis of CdTe at FeOOH and CdTe at Ni(OH)2 composited nanoparticles

    International Nuclear Information System (INIS)

    Li Liang; Ren Jicun

    2006-01-01

    Two kinds of bi-functional nanomaterials, CdTe at FeOOH and CdTe at Ni(OH) 2 , were synthesized in water phase. In the synthesis, using the luminescent CdTe nanocrystals (NCs) as a core, Fe 3+ (Ni 2+ ) was added to CdTe NCs aqueous solution and slowly hydrolyzed to deposit a layer of hydroxide onto the luminescent CdTe NCs in the presence of stabilizer. TEM, XRD, XPS, UV, fluorescence spectrometer and physical property measurement system (PPMS) were used to characterize the final products, and the results showed that the as-prepared nanoparticles with core/shell structure exhibited certain magnetic properties and fluorescence. - Graphical abstract: Fluorescent and magnetic bi-functional CdTe at FeOOH and CdTe at Ni(OH) 2 nanoparticles were prepared by seed-mediated approach in water phase

  13. Nanostructured Electrolytes for Stable Lithium Electrodeposition in Secondary Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Zhengyuan; Nath, Pooja; Lu, Yingying; Tikekar, Mukul D.; Archer, Lynden A.

    2015-11-17

    modulus and stability requirements have to date proven to be insurmountable obstacles to progress. In this Account, we first review recent advances in continuum theory for dendrite growth and proliferation during metal electrodeposition. We show that the range of options for designing electrolytes and separators that stabilize electrodeposition is now substantially broader than one might imagine from previous literature accounts. In particular, separators designed at the nanoscale to constrain ion transport on length scales below a theory-defined cutoff, and structured electrolytes in which a fraction of anions are permanently immobilized to nanoparticles, to a polymer network or ceramic membrane are considered particularly promising for their ability to stabilize electrodeposition of lithium metal without compromising ionic conductivity or room temperature battery operation. We also review recent progress in designing surface passivation films for metallic lithium that facilitate fast deposition of lithium at the electrolyte/electrode interface and at the same time protect the lithium from parasitic side reactions with liquid electrolytes. A promising finding from both theory and experiment is that simple film-forming halide salt additives in a conventional liquid electrolyte can substantially extend the lifetime and safety of LMBs.

  14. Nanostructured electrolytes for stable lithium electrodeposition in secondary batteries.

    Science.gov (United States)

    Tu, Zhengyuan; Nath, Pooja; Lu, Yingying; Tikekar, Mukul D; Archer, Lynden A

    2015-11-17

    modulus and stability requirements have to date proven to be insurmountable obstacles to progress. In this Account, we first review recent advances in continuum theory for dendrite growth and proliferation during metal electrodeposition. We show that the range of options for designing electrolytes and separators that stabilize electrodeposition is now substantially broader than one might imagine from previous literature accounts. In particular, separators designed at the nanoscale to constrain ion transport on length scales below a theory-defined cutoff, and structured electrolytes in which a fraction of anions are permanently immobilized to nanoparticles, to a polymer network or ceramic membrane are considered particularly promising for their ability to stabilize electrodeposition of lithium metal without compromising ionic conductivity or room temperature battery operation. We also review recent progress in designing surface passivation films for metallic lithium that facilitate fast deposition of lithium at the electrolyte/electrode interface and at the same time protect the lithium from parasitic side reactions with liquid electrolytes. A promising finding from both theory and experiment is that simple film-forming halide salt additives in a conventional liquid electrolyte can substantially extend the lifetime and safety of LMBs.

  15. Nanostructured Electrolytes for Stable Lithium Electrodeposition in Secondary Batteries

    KAUST Repository

    Tu, Zhengyuan

    2015-11-17

    of ceramic electrolytes that meet the modulus and stability requirements have to date proven to be insurmountable obstacles to progress. In this Account, we first review recent advances in continuum theory for dendrite growth and proliferation during metal electrodeposition. We show that the range of options for designing electrolytes and separators that stabilize electrodeposition is now substantially broader than one might imagine from previous literature accounts. In particular, separators designed at the nanoscale to constrain ion transport on length scales below a theory-defined cutoff, and structured electrolytes in which a fraction of anions are permanently immobilized to nanoparticles, to a polymer network or ceramic membrane are considered particularly promising for their ability to stabilize electrodeposition of lithium metal without compromising ionic conductivity or room temperature battery operation. We also review recent progress in designing surface passivation films for metallic lithium that facilitate fast deposition of lithium at the electrolyte/electrode interface and at the same time protect the lithium from parasitic side reactions with liquid electrolytes. A promising finding from both theory and experiment is that simple film-forming halide salt additives in a conventional liquid electrolyte can substantially extend the lifetime and safety of LMBs.

  16. Film

    OpenAIRE

    Jones, Sarah

    2002-01-01

    This book looks at the movie industry and at the labour intensive but fascinating process of making a feature film. It examines each stage in the production of a film, from initial idea through to the final cut and screening, and highlights the main activities that take place along the way. The book not only looks at the work of prominent people in the film world, such as directors and actors, but also describes the equally important but less high profile contributions of the gaffer, best boy...

  17. Textile electrodes as substrates for the electrodeposition of porous ZnO.

    Science.gov (United States)

    Loewenstein, Thomas; Hastall, Andreas; Mingebach, Markus; Zimmermann, Yvonne; Neudeck, Andreas; Schlettwein, Derck

    2008-04-14

    Metal-coated polyamide threads and filaments were chosen as substrate electrodes to deposit highly porous ZnO films for photovoltaic application. The films were electrodeposited at 70 degrees C from oxygen-saturated aqueous zinc salt solutions containing EosinY as a structure directing agent. The current density during deposition was increased compared with planar electrodes by enhanced diffusion at the filaments operating as cylindrical microelectrodes. Analysis by scanning electron microscopy showed an influence of geometrical constraints within the textiles and the hydrodynamic flow rate in the deposition solution on the film morphology. Photoelectrochemical characterization of sensitized films revealed the feasibility of the presented approach and indicated further steps needed for electrode optimization.

  18. Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

    Energy Technology Data Exchange (ETDEWEB)

    Abbas, A.; Meysing, D. M.; Reese, M. O.; Barnes, T. M.; Walls, J. M.; Wolden, C. A.

    2018-01-01

    Oxygenated cadmium sulfide (CdS:O) is often used as the n-type window layer in high-performance CdTe heterojunction solar cells. The as-deposited layer prepared by reactive sputtering is XRD amorphous, with a bulk composition of CdS0.8O1.2. Recently it was shown that this layer undergoes significant transformation during device fabrication, but the roles of the individual high temperature processing steps was unclear. In this work high resolution transmission electron microscopy coupled to elemental analysis was used to understand the evolution of the heterojunction region through the individual high temperature fabrication steps of CdTe deposition, CdCl2 activation, and back contact activation. It is found that during CdTe deposition by close spaced sublimation at 600 degrees C the CdS:O film undergoes recrystallization, accompanied by a significant (~30%) reduction in thickness. It is observed that oxygen segregates during this step, forming a bi-layer morphology consisting of nanocrystalline CdS adjacent to the tin oxide contact and an oxygen-rich layer adjacent to the CdTe absorber. This bilayer structure is then lost during the 400 degrees C CdCl2 treatment where the film transforms into a heterogeneous structure with cadmium sulfate clusters distributed randomly throughout the window layer. The thickness of window layer remains essentially unchanged after CdCl2 treatment, but a ~25 nm graded interfacial layer between CdTe and the window region is formed. Finally, the rapid thermal processing step used to activate the back contact was found to have a negligible impact on the structure or composition of the heterojunction region.

  19. MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

    Science.gov (United States)

    Irvine, S. J. C.; Barrioz, V.; Lamb, D.; Jones, E. W.; Rowlands-Jones, R. L.

    2008-11-01

    This paper will review the chalcogenide thin film photovoltaic (PV) solar cells, based on cadmium telluride (CdTe) and copper indium diselenide (CIS) and discuss the potential for metalorganic chemical vapour deposition (MOCVD) to enable more advanced devices in the second generation of CdTe module production. The current generation of production methods is based on physical vapour deposition (PVD) or close-spaced sublimation (CSS). This paper concentrates on the less well-known topic of MOCVD of thin film chalcogenide cells, and in particular that of CdTe. Efficient CdTe PV solar cells (>10% AM1.5) have been demonstrated from deposition of the CdS, CdTe and CdCl 2 films in a single MOCVD chamber. The CdTe layer was doped with As and an additional high As concentration CdTe layer provides effective low resistance contacting without the need for wet etching the surface. The high level of flexibility in using MOCVD has been demonstrated where the CdS window layer has been alloyed with Zn to improve the blue response of the PV device and improve AM1.5 efficiency to 13.3%.

  20. Film

    OpenAIRE

    Bould, M.

    2014-01-01

    A critical overview of critical-theoretical understandings of sf film, especially those promulgated by critics devoted to sf as a prose fiction form. It also considers adaptation, spectacle and special effects.

  1. Hybrid coating on steel: ZnNi electrodeposition and surface modification with organothiols and diazonium salts

    International Nuclear Information System (INIS)

    Berger, Francois; Delhalle, Joseph; Mekhalif, Zineb

    2008-01-01

    Sacrificial electrodeposited ZnNi is currently studied for replacing chromate conversion coatings (CCC) in anticorrosion applications. The present-day performances of ZnNi are still away from those of CCCs and the additional organic layers such as polymers and paints are still permeable and cannot prevent the corrosive species to reach the metal. Suitable adhesion primers could improve the situation by minimizing the access of the corrosive species to the polymer/metal interface. As a contribution to this interface problem, the present work provides a comparison of the protective properties of two structurally related molecules (4-nitrothiophenol and 4-nitrobenzenediazonium) grafted on a ZnNi coating electrodeposited on steel. Films of 4-nitrophenyl have been prepared according to the self-assembly process while films of 4-nitrobenzene have been obtained by electrochemical grafting, n-dodecanethiol being used as model system. The adsorption of these molecules as well as the resulting organic film is characterized by X-ray photoelectron spectroscopy (XPS) and polarization modulation-infrared reflection absorption spectroscopy (PM-IRRAS). The protective properties of the organic films against corrosion are investigated by linear sweep voltammetry (LSV), cyclic voltammetry (CV) and scanning vibrating electrode technique (SVET)

  2. Electrodeposition of organic-inorganic tri-halide perovskites solar cell

    Science.gov (United States)

    Charles, U. A.; Ibrahim, M. A.; Teridi, M. A. M.

    2018-02-01

    Perovskite (CH3NH3PbI3) semiconductor materials are promising high-performance light energy absorber for solar cell application. However, the power conversion efficiency of perovskite solar cell is severely affected by the surface quality of the deposited thin film. Spin coating is a low-cost and widely used deposition technique for perovskite solar cell. Notably, film deposited by spin coating evolves surface hydroxide and defeats from uncontrolled precipitation and inter-diffusion reaction. Alternatively, vapor deposition (VD) method produces uniform thin film but requires precise control of complex thermodynamic parameters which makes the technique unsuitable for large scale production. Most deposition techniques for perovskite require tedious surface optimization to improve the surface quality of deposits. Optimization of perovskite surface is necessary to significantly improve device structure and electrical output. In this review, electrodeposition of perovskite solar cell is demonstrated as a scalable and reproducible technique to fabricate uniform and smooth thin film surface that circumvents the need for high vacuum environment. Electrodeposition is achieved at low temperatures, supports precise control and optimization of deposits for efficient charge transfer.

  3. Charge-carrier transport and recombination in heteroepitaxial CdTe

    International Nuclear Information System (INIS)

    Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-01-01

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  4. Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

    Science.gov (United States)

    Su, Ching-Hua

    2007-01-01

    Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

  5. Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J.; Misra, Sudhajit [Materials Science and Engineering, University of Utah, 50 S. Central Campus Drive, Salt Lake City, Utah 84122 (United States); Paudel, Naba [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Vandewal, Koen; Salleo, Alberto [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Ferekides, Christos [Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., Tampa, Florida 33620 (United States); Scarpulla, Michael A. [Materials Science and Engineering, University of Utah, 50 S. Central Campus Drive, Salt Lake City, Utah 84122 (United States); Electrical and Computer Engineering, University of Utah, 50 S. Central Campus Drive, Salt Lake City, Utah 84122 (United States)

    2016-04-28

    The high performance of polycrystalline CdTe thin film solar cells is enabled by annealing in the presence of Cl. This process is typically carried out for tens of minutes resulting in reduction of defect states within the bandgap among other beneficial effects. In this work, we investigate laser annealing as a means of rapidly annealing CdTe using a continuous wave sub-bandgap 1064 nm laser. The partial transmission of the beam allows us to monitor the annealing process in-situ and in real time. We find that optoelectronic and structural changes occur through two distinct kinetic processes resulting in the removal of deep defects and twinned regions, respectively. A multilayer optical model including surface roughness is used to interpret both the in-situ transmission as well as ex-situ reflectivity measurements. These experiments demonstrate beneficial material changes resulting from sub-bandgap laser-driven CdCl{sub 2} treatment of CdTe in minutes, which is an important step towards accelerating the processing of the CdTe absorber layer.

  6. The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paudel, Naba R.; Grice, Corey R.; Xiao, Chuanxiao; Yan, Yanfa [Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

    2014-07-28

    High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270 °C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2} + Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270 °C decrease as the O{sub 2}/(O{sub 2} + Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270 °C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270 °C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270 °C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

  7. A facile route to shape controlled CdTe nanoparticles

    International Nuclear Information System (INIS)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

    2011-01-01

    Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  8. Electrodeposition of Actinide and Lanthanide Elements

    Energy Technology Data Exchange (ETDEWEB)

    Baerring, N.E.

    1966-02-15

    Some deposition parameters for the quantitative electrodeposition of hydrolysis products of plutonium were qualitatively studied at trace concentrations of plutonium. The hydrogen ion concentration, the current and the electrolysis time proved to be the determining factors in the quantitative electrolytic precipitation of plutonium, while other factors such as cathode material, the pretreatment of the cathode surface, the nature of the electrolytic anion, and the oxidation state of plutonium in the starting solution were found to be of less importance. The conditions selected for quantitative electrodeposition of plutonium from slightly acid nitrate solutions on a stainless steel cathode were successfully tried also with uranium, neptunium, americium, cerium and thulium. Details of a procedure used for plating mg amounts of plutonium and neptunium on small stainless steel cylinders are also given.

  9. Electrodepositions on Tantalum in Alkali Halide Melts

    DEFF Research Database (Denmark)

    Barner, Jens H. Von; Jensen, Annemette Hindhede; Christensen, Erik

    2013-01-01

    Surface layers of tantalum metal were electrodeposited on steel from K2TaF7-LiF-NaF-KF melts. With careful control of the oxide contents dense and adherent deposits could be obtained by pulse plating. In NaCl-KCl-NaF-Na2CO3 and NaCl-KCl-Na2CO3 melts carbonate ions seems to be reduced to carbon in...

  10. Electrodepositions on Tantalum in alkali halide melts

    DEFF Research Database (Denmark)

    Barner, Jens H. Von; Jensen, Annemette Hindhede; Christensen, Erik

    2012-01-01

    Surface layers of tantalum metal were electrodeposited on steel from K 2TaF7-LiF-NaF-KF melts. With careful control of the oxide contents dense and adherent deposits could be obtained by pulse plating. In NaCl-KCl-NaF-Na2CO3 and NaCl-KCl-Na2CO 3 melts carbonate ions seems to be reduced to carbon ...

  11. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe2 base layers

    International Nuclear Information System (INIS)

    Khrypunov, G. S.; Sokol, E. I.; Yakimenko, Yu. I.; Meriuts, A. V.; Ivashuk, A. V.; Shelest, T. N.

    2014-01-01

    The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe 2 base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 μm. The gain in the efficiency of the tandem structure, compared with an individual CuInSe 2 -based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected

  12. Thermal and structural properties of spray pyrolysed CdS thin film

    Indian Academy of Sciences (India)

    Unknown

    Thermal and structural properties of CdS thin film. 235. 235 by photoacoustic technique. Polycrystalline CdTe films having 55 µm thickness were grown onto the glass slides using the close space vapour technique. The total thick- ness of two-layer system (glass and CdSe thin film) could be changed by varying the thickness ...

  13. Electrodeposition of gold nanoclusters on overoxidized polypyrrole film modified glassy carbon electrode and its application for the simultaneous determination of epinephrine and uric acid under coexistence of ascorbic acid

    Energy Technology Data Exchange (ETDEWEB)

    Li Jing [Department of Chemistry, University of Science and Technology of China, Hefei 230026 (China); Lin Xiangqin [Department of Chemistry, University of Science and Technology of China, Hefei 230026 (China)]. E-mail: xqlin@ustc.edu.cn

    2007-07-23

    A novel biosensor was fabricated by electrochemical deposition of gold nanoclusters on ultrathin overoxidized polypyrrole (PPyox) film, formed a nano-Au/PPyox composite on glassy carbon electrode (nano-Au/PPyox/GCE). The properties of the nanocomposite have been characterized by field emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD) and electrochemical investigations. The nano-Au/PPyox/GCE had strongly catalytic activity toward the oxidation of epinephrine (EP), uric acid (UA) and ascorbic acid (AA), and resolved the overlapping voltammetric response of EP, UA and AA into three well-defined peaks with a large anodic peak difference. The catalytic peak currents obtained from differential pulse voltammetry increased linearly with increasing EP and UA concentrations in the range of 3.0 x 10{sup -7} to 2.1 x 10{sup -5} M and 5.0 x 10{sup -8} to 2.8 x 10{sup -5} M with a detection limit of 3.0 x 10{sup -8} and 1.2 x 10{sup -8} M (s/n = 3), respectively. The results showed that the modified electrode can selectively determine EP and UA in the coexistence of a large amount of AA. In addition, the sensor exhibited excellent sensitivity, selectivity and stability. The nano-Au/PPyox/GCE has been applied to determination of EP in epinephrine hydrochloride injection and UA in urine samples with satisfactory results.

  14. Metallic amorphous electrodeposited molybdenum coating from aqueous electrolyte: Structural, electrical and morphological properties under current density

    Energy Technology Data Exchange (ETDEWEB)

    Nemla, Fatima [LEPCM, Department of Physics, University of Batna (Algeria); Cherrad, Djellal, E-mail: cherradphisic@yahoo.fr [Laboratory for Developing New Materials and Their Characterizations, University of Setif (Algeria)

    2016-07-01

    Graphical abstract: - Highlights: • Although difficulties related to electrodeposition of Mo films, we have successfully coated onto a cooper substrate. • A good formation of bcc Mo phase and lattice parameter was very accurate. • It seems that electrical properties of our samples are good and suitable as back contact for thin film solar cells. • It seems that grain size, microstrain and dislocation density are all managed and correlated to retain the resistivity to a considerable minimum value. - Abstract: Molybdenum coatings are extensively utilized as back contact for CIGS-based solar cells. However, their electrodeposition from aqueous electrolyte still sophisticates, since long time, owing to the high reactivity with oxygen. In this study, we present a successful 30 min electrodeposition experiment of somewhat thick (∼0.98–2.9 μm) and of moderate surface roughness RMS (∼47–58 nm), metallic bright Mo coating from aqueous electrolyte containing molybdate ions. XRD analysis and Hall Effect measurements have been used to confirm the presence of Mo. The crystal structure of deposits was slightly amorphous in nature to body centred cubic structure (bcc) Mo (110), (211) and (220) face. Lattice parameters exhibit some weak fluctuated tensile stress when compared to the reference lattice parameter. Additionally, our calculated lattice parameters are in good agreement with some previous works from literature. Discussions on the grain growth prove that they are constrained by grain boundary energy not the thickness effect. Further discussions were made on the electrical resistivity and surface morphology. Resonance scattering of Fermi electrons are expected to contribute towards the variation in the film resistivity through the carrier mobility limitation. However, studied samples might be qualified as candidates for solar cell application.

  15. Electrodeposition Techniques for the Preparation of Beta-Sprectroscopy Sources of Rare-Earth Elements

    DEFF Research Database (Denmark)

    Hansen, P. Gregers; Høgh, J.; Nielsen, H. L.

    1964-01-01

    Thin, uniform radioactive deposits of rare earths and related elements can be prepared by cathodic electrodeposition of their hydroxides. The main theoretical and experimental features of this process are reviewed and plating cell design and the choice of conditions are described together...... with the associated radio-chemical methods. The use of copper-backed nickel films is shown to allow the preparation of beta sources on quite thin (down to 45 μg cm−2) backings, if the copper layer is etched selectively after the radioactivity has been plated onto the nickel....

  16. Additive enhanced non-aqueous electrodeposition of silver on Ba2YCu3O7

    International Nuclear Information System (INIS)

    Rosamilia, J.M.; Miller, B.

    1990-01-01

    A non-aqueous plating bath for silver deposition on the Ba 2 YCu 3 O 7 superconductor has been modified with thiourea to give enhanced coverage of the metal film at low thicknesses. For both porous and high density ceramic substrates, SEM and optical microscopy show nucleation of silver deposits is increased by the additive. The resulting silver-superconductor contact resistances are comparable to those achieved without additives. Adhesion of the deposits and ease of mechanical handling are improved with thiourea. The combination of highly reactive oxidized substrate, non-aqueous solvent, and strongly surface active agent form a novel extension for electrodeposition science

  17. Investigation of magnetoimpedance effect on electrodeposited NiFe/Cu wire using inductance spectroscopy

    International Nuclear Information System (INIS)

    Mishra, Amaresh Chandra; Sahoo, Trilochan; Srinivas, V.; Thakur, Awalendra K.

    2011-01-01

    In this report, inductance spectroscopy (IS) has been used as a tool to investigate the thickness dependence of magnetoimpedance (MI) on electrodeposited NiFe thin films. An MI value as high as 140% has been observed under an applied magnetic field of 76 Oe at 300 kHz frequency for a film thickness of 6.8 μm. This result is in sharp contrast to earlier reports in literature showing monotonous increase in MI as a function of thickness. Maximum of MI was found at an optimum film thickness whose position varies with frequency. These reports exhibiting strong frequency dependence of MI prompted us to investigate the underlying physics using IS. The origin of MI lies in the combined effect of domain wall motion and spin rotation, which contributes to permeability. A parallel inductance and resistance (LR) circuit in series with series LR circuit model has been proposed as an equivalent electrical model to describe the property of these coated wires. The circuit elements have been linked with the phenomenon of domain wall motion and spin rotation. The experimental results obtained appear to be consistent with the proposed equivalent circuit model. -- Research Highlights: →GMI study on electrodeposited NiFe/Cu wire has been done to resolve the existing controversies. →Inductance spectroscopy has been used to evaluate the magnetic character. →The sample has been modeled as an equivalent electrical circuit. →A correlation between circuit parameters and GMI has been achieved.

  18. Modelisation of the growth of extended defects created by electron irradiation in CdTe

    International Nuclear Information System (INIS)

    Gue, A.M.; Esteve, D.; Mazel, A.

    1989-01-01

    After a brief review of the experimental features of dislocation loops created in cadmium telluride by high energy electron irradiation, we present a theoretical modelisation of the growth of extended defects. The basic method of the Chemical Reaction Rate Theory has been modified in order to take into account: the instability of small clusters, the effects of surfaces, the fact that CdTe is a binary compound. The comparison between theoretical and experimental results leads us to conclude that the vacancy-interstitial recombination energy (E v ) is different from the diinterstitial formation energy (E i ). The values of these energies have been determined: E i =.35eV, E v =.25eV, E d =1.1eV (small clusters dissociation energy). This work has also shown that the lake of dislocation loops at high irradiation temperature (T>480K) is not only a thin film effect but is due to clusters instability [fr

  19. High Performance Non-enzymatic Glucose Sensor Based on One-Step Electrodeposited Nickel Sulfide.

    Science.gov (United States)

    Kannan, Padmanathan Karthick; Rout, Chandra Sekhar

    2015-06-22

    Nanostructured NiS thin film was prepared by a one-step electrodeposition method and the structural, morphological characteristics of the as-prepared films were analyzed by X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDAX). The electrocatalytic activity of NiS thin film towards glucose oxidation was investigated by fabricating a non-enzymatic glucose sensor and the sensor performance was studied by cyclic voltammetry (CV) and amperometry. The fabricated sensor showed excellent sensitivity and low detection limit with values of 7.43 μA μM(-1)  cm(-2) and 0.32 μM, respectively, and a response time of <8 s. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Corrosion resistance of the substrates for the cryogenic gyroscope and electrodeposition of the superconductive niobium coatings

    Science.gov (United States)

    Dubrovskiy, A. R.; Okunev, M. A.; Makarova, O. V.; Kuznetsov, S. A.

    2017-05-01

    The interaction of different materials with the niobium containing melt was investigated. As substrate materials the ceramics, beryllium and carbopyroceram were chosen. Several spherical ceramic and beryllium samples were coated with protective molybdenum and niobium films by magnetron sputtering and PVD, respectively. After the experiment (exposition time 10 min) the exfoliation of molybdenum film from ceramic samples was observed due to interaction of the substrate with the melt. The niobium protective coatings reacted with the melt with niobium oxide formation. The beryllium samples regardless of the shape and the presence of the protective films were dissolved in the niobium containing melt due to more negative electrode potential comparing with niobium one. The carbopyroceram samples were exposed in the melt during 3 and 12 h. It was found that the carbopyroceram not corrodes in the niobium containing melt. The optimal regimes for electrodeposition of smooth uniform niobium coatings with the thickness up to 50 μm on carbopyroceram spheres were found.

  1. Electrodeposition of Polypyrrole/Reduced Graphene Oxide/Iron Oxide Nanocomposite as Supercapacitor Electrode Material

    Directory of Open Access Journals (Sweden)

    Y. C. Eeu

    2013-01-01

    Full Text Available Polypyrrole (PPy was reinforced with reduced graphene oxide (RGO and iron oxide to achieve electrochemical stability and enhancement. The ternary nanocomposite film was prepared using a facile one-pot chronoamperometry approach, which is inexpensive and experimentally friendly. The field emission scanning electron microscopy (FESEM image shows a layered morphology of the ternary nanocomposite film as opposed to the dendritic structure of PPy, suggesting hybridization of the three materials during electrodeposition. X-ray diffraction (XRD profile shows the presence of Fe2O3 in the ternary nanocomposite. Cyclic voltammetry (CV analysis illustrates enhanced current for the nanocomposite by twofold and fourfold compared to its binary (PPy/RGO and individual (PPy counterparts, respectively. The ternary nanocomposite film exhibited excellent specific capacitance retention even after 200 cycles of charge/discharge.

  2. Templated electrodeposition of functional nanostructures: nanowires, nanotubes and nanocubes

    NARCIS (Netherlands)

    Maijenburg, A.W.

    2014-01-01

    This thesis is entitled “Templated electrodeposition of functional nanostructures: nanowires, nanotubes and nanocubes”. Templated electrodeposition is the synthesis technique that was used throughout this thesis, and it comprises the use of a template with specific shape and dimensions for the

  3. Conductance quantization in magnetic nanowires electrodeposited in nanopores

    DEFF Research Database (Denmark)

    Elhoussine, F.; Mátéfi-Tempfli, Stefan; Encinas, A.

    2002-01-01

    Magnetic nanocontacts have been prepared by a templating method that involves the electrodeposition of Ni within the pores of track-etched polymer membranes. The nanocontacts are made at the extremity of a single Ni nanowire either inside or outside the pores. The method is simple, flexible...... degeneracy. Our fabrication method enables future investigation of ballistic spin transport phenomena in electrodeposited magnetic nanocontacts....

  4. Corrosion and wear behaviour of multilayer pulse electrodeposited ...

    Indian Academy of Sciences (India)

    In this study, the Ni/Al 2 O 3 nanocomposite multilayer coatings with six consecutive layers were electrodeposited on the mild steel by pulse electrodeposition with ultrasound agitation from nickelWatts-type bath. Thestructure and morphology of the etched coatings cross-section were characterized by scanning electron ...

  5. Deuterium retention in molten salt electrodeposition tungsten coatings

    International Nuclear Information System (INIS)

    Zhou, Hai-Shan; Xu, Yu-Ping; Sun, Ning-Bo; Zhang, Ying-Chun; Oya, Yasuhisa; Zhao, Ming-Zhong; Mao, Hong-Min; Ding, Fang; Liu, Feng; Luo, Guang-Nan

    2016-01-01

    Highlights: • We investigate D retention in electrodeposition W coatings. • W coatings are exposed to D plasmas in the EAST tokamak. • A cathodic current density dependence on D retention is found. • Electrodeposition W exhibits lower D retention than VPS-W. - Abstract: Molten salt electrodeposition is a promising technology to manufacture the first wall of a fusion reactor. Deuterium (D) retention behavior in molten salt electrodeposition tungsten (W) coatings has been investigated by D-plasma exposure in the EAST tokamak and D-ion implantation in an ion beam facility. Tokamak exposure experiments demonstrate that coatings prepared with lower current density exhibit less D retention and milder surface damage. Deuterium-ion implantation experiments indicate the D retention in the molten salt electrodeposition W is less than that in vacuum plasma spraying W and polycrystalline W.

  6. Structural, morphological and magnetic characterization of electrodeposited Co–Fe–W alloys

    Energy Technology Data Exchange (ETDEWEB)

    Noce, R. Della, E-mail: rodrnoce@iq.unesp.br [Instituto de Química, Universidade Estadual Paulista, UNESP, 14800-900 Araraquara, SP (Brazil); Benedetti, A.V.; Magnani, M. [Instituto de Química, Universidade Estadual Paulista, UNESP, 14800-900 Araraquara, SP (Brazil); Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória, ES (Brazil); Kumar, H.; Cornejo, D.R. [Instituto de Física, Universidade de São Paulo, USP, 05508-090 São Paulo, SP (Brazil); Ospina, C.A. [Electron Microscopy Laboratory, Brazilian Nanotechnology National Laboratory, 13083-970 Campinas, SP (Brazil)

    2014-10-25

    Highlights: • Small W additions (up to 9 at.%) to the Co{sub 35}Fe{sub 65} binary system. • Electrodeposited Co–Fe–W alloys characterization by XRD, SEM, TEM, Mössbauer spectroscopy and magnetic measurements. • Production of Co–Fe–W alloys with low values of coercivity and high saturation magnetization. • Potential materials for applications in magnetic devices such as read/write heads and hard disks. - Abstract: Structural, morphological and magnetic characterization of electrodeposited Co–Fe–W alloys, containing small amounts of W (up to 9 at.%), were performed using X-ray diffractometry, scanning (SEM) and transmission (TEM) electron microscopy, Mössbauer spectroscopy and magnetization measurements. Electrodeposited (Co{sub 100−x}Fe{sub x}){sub 100−y}W{sub y} films (x = 63–72 at.% Fe, y = 4–9 at.% W) were successfully produced varying the applied cathodic current density (i{sub c}) between 0.5 and 10 mA cm{sup −2}. X-ray diffraction results revealed a bcc-like structure for all studied compositions with average crystallite size ranging from 16 to 35 nm, as also confirmed by TEM results. SEM images indicated that needle-type morphology is dominant for the deposits containing lower W content (up to 4.5 at.%.), while a cauliflower-type behavior is observed for higher W content deposits. Room temperature Mössbauer spectra indicate the presence of two magnetic species for all samples; one component associated with an ordered Co–Fe–W fraction (crystalline grain core) and a magnetic disordered Co–Fe–W contribution, which can be attributed to the grain boundaries/grain surfaces. Magnetization was observed to be in the film plane along the film direction, except the sample prepared at i{sub c} = 10 mA cm{sup −2} that is slightly canted from in- to out-of-plane geometry. Magnetic measurements show high saturation magnetization values accompanied by low coercivity ones for the electrodeposited Co–Fe–W alloys, making these

  7. Film

    OpenAIRE

    Balint, Ruth; Dolgopolov, Greg

    2008-01-01

    From the beginning of the twentieth century, Sydney defined cosmopolitanism and modernity in the national imagination, and central to this image was the cinema: its technology, its architecture, its stars, its marketing and the stories it circulated to its audiences about Australia and the world. Though it is difficult to define a genre of Sydney film, Sydney provided the backdrop for a host of ideas about the city, and later suburbia. Sydney came to be seen as a ‘tinsel town’ of cultural ban...

  8. Silver electrodeposition over an Ir/Ir oxide electrode

    International Nuclear Information System (INIS)

    Lezna, R.O.; Tacconi, N.R. de; Arvia, A.J.

    1984-01-01

    Changes in electrochemical response brought about by the electrodeposition of small amounts of silver on oxide covered iridium electrodes are examined in relation to the semiconducting properties of the oxide. The charge involved in both silver and hydrogen atoms was found to remain practically constant and independent of the oxide thickness which was gradually increased by potentiodynamic cycling up to greater anodic switching potentials. This result suggests that the charge transfer for both processes takes place at the bare metal. The considerable increase in the film conductivity when the potential is above ductivity when the potential is above oV (MSE) is shown by the fact that under certain controlled conditions the silver electroreduction/ electroxidation reactions are shifted to a more anodic potential region where the oxide becomes conductor and participates in the charge transfer process. Silver loading increases the electrical conductivity of the oxide providing a large cross section for the electroxidation of Ir, particularly in a region where the oxide conductivity is poor (E [pt

  9. ZnO electrodeposition onto gold from recordable compact discs and its use as photocatalyst under solar irradiation

    Directory of Open Access Journals (Sweden)

    L. J. Venturini da Silva

    2013-03-01

    Full Text Available A ZnO film was electrodeposited onto a gold substrate obtained from a recordable compact disc and tested as photocatalyst in degradation of dye in aqueous solution. X-ray diffractometry and atomic force microscopic analysis showed a pure ZnO phase with particle sizes in the nanometric scale. The results showed that the photocatalytic activity of the film is significant, with more than 90 % degradation of the dye in under 6 h sunlight irradiation. The photocatalytic process in sunlight follows first-order kinetics.

  10. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Entine, G.

    1985-01-01

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  11. Nanostructured CdS:O film: preparation, properties, and application

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Yan, Y.; Dhere, R.G.; Zhang, Y.; Zhou, J.; Perkins, C.; To, B. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 (United States)

    2004-03-01

    In this paper, we report on a novel material: nanostructured CdS:O film prepared at room temperature by rf sputtering, and its application in CdTe solar cells. The CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and a nanostructure; the bandgap increases with an increase of oxygen content (from {proportional_to}4 at.% to {proportional_to}23 at.%) and a decrease of grain size (from about a few hundred A to a few tenths A). Our results have also demonstrated that the higher oxygen content presented in the nanostructured CdS:O films can significantly suppress the Te diffusion from the CdTe into the CdS film and the formation of a CdS{sub 1-y}Te{sub y} alloy with a lower bandgap that results in poor quantum efficiency in the short-wavelength region. The preliminary device results have demonstrated that the J{sub sc} of the CdTe device can be greatly improved by exploiting the thin nanostructured CdS:O film, while maintaining higher V{sub oc} and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed total-area efficiency of 15.5%. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Deposition and characterization of p-type cadmium telluride films

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.; Firszt, F.; Naseem, H. A.; Stawski, R.

    1985-08-01

    Cadmium telluride is a direct-gap semiconductor with a room-temperature energy gap of 1.5 eV. It is a promising photovoltaic material, and single-crystalline homojunction and heterojunction solar cells have been prepared and characterized. Relatively short minority carrier diffusion length (1-2 microns) can be tolerated due to a short optical absorption length, and, for this reason, CdTe is particularly suited for thin-film devices. The fabrication of thin-film solar cells is based on the use of p-type CdTe films. The present investigation has the objective to prepare CdTe films with controlled properties in a reproducible manner, taking into account a utilization of the reaction of Cd and Te vapor on the surface of heated substrates in a hydrogen (or helium) atmosphere in a gas-flow system. Attention is given to details of film deposition, and CdTe films on graphite, W/graphite, mullite, and glass substrates.

  13. Highly Resolved Nanostructured PEDOT on Large Areas by Nanosphere Lithography and Electrodeposition.

    Science.gov (United States)

    Nguyen, Van-Quynh; Schaming, Delphine; Martin, Pascal; Lacroix, Jean-Christophe

    2015-10-07

    Poly(ethylenedioxythiophene) (PEDOT) films were electrodeposited galvanostatically from an EDOT/sodium dodecyl sulfate solution in water, through a carboxylated polystyrene template monolayer self-assembled on ITO, after which the template was dissolved away in tetrahydrofuran. Analysis of the films by scanning electron microscopy and atomic force microscopy reveals large-area PEDOT honeycomb structures. The morphology of these structures was varied electrochemically, as the effective thickness and, surprisingly, the shape of the honeycomb arrangement depend on the polymerization time. Using nanospheres of 1 μm diameter and charge densities between 12 and 30 mC cm(-2) for electrodeposition generates PEDOT hexagons with very thin rectilinear walls 30-35 nm-thick and 800 nm-long, whereas at higher charge densities, circular bowls are created with 60 nm walls separating adjacent bowls; triangular areas as small as 0.02 μm(2) develop at the intersection of three nanospheres. These morphologies are specific to the use of carboxylated PS spheres and a water-based solution with a surfactant in the galvanostatic electrodeposition mode. Using smaller nanospheres, i.e. 500 nm in diameter, makes it possible to reach PEDOT hexagons with rectilinear walls as small as 11-17 nm-thick and 300 nm-long; circular bowls with 25-35 nm walls separating adjacent bowls and triangular areas as small as 0.003 μm(2) can also be generated. The wettabilities of the surfaces depend markedly on the pore depth of the PEDOT nanostructure, with contact angles going from 82° to 130° with increasing pore size. Finally these nanostructured PEDOT electrodes were used in Grätzel-type dye-sensitized solar cells (DSSCs) as Pt-free counter-electrodes, with an increase in the yield from 7.0 (bulk PEDOT) to 8.1%.

  14. Digital biomagnetism: Electrodeposited multilayer magnetic barcodes

    Energy Technology Data Exchange (ETDEWEB)

    Palfreyman, Justin J. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom)], E-mail: jjp38@cam.ac.uk; Cooper, Joshaniel F.K.; Belle, Frieda van; Hong Bingyan; Hayward, Tom J. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Lopalco, Maria; Bradley, Mark [School of Chemistry, University of Edinburgh, King' s Buildings, Edinburgh, EH9 3JJ (United Kingdom); Mitrelias, Thanos; Bland, J. Anthony C. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom)

    2009-05-15

    A novel magnetic encoding technique for performing high-throughput biological assays is presented. Electrodeposited Ni/Cu and Co/Cu multilayer pillar structures with a diameter of 15 {mu}m and a thickness up to 10 {mu}m are presented as 'magnetic barcodes', where the number of unique codes possible increases exponentially with a linear increase in length. A gold cap facilitates the growth of self-assembled monolayers (SAMs), while microdrop printing allows efficient generation of large libraries of tagged probes. Coercivity-tuning techniques are used to exploit a non-proximity encoding methodology compatible with microfluidic flow.

  15. Residual stress in Ni-W electrodeposits

    DEFF Research Database (Denmark)

    Mizushima, Io; Tang, Peter Torben; Hansen, Hans Nørgaard

    2006-01-01

    In the present work, the residual stress in Ni–W layers electrodeposited from electrolytes based on NiSO4 and Na2WO4, is investigated. Citrate, glycine and triethanolamine were used as complexing agents, enabling complex formation between the nickel ion and tungstate. The results show that the type...... of complexing agent and the current efficiency have an influence on the residual stress. In all cases, an increase in tensile stress in the deposit with time after deposition was observed. Pulse plating could improve the stress level for the electrolyte containing equal amounts of citrate...

  16. Electrodeposition of Cu-Cd alloys

    International Nuclear Information System (INIS)

    Srivastava, R.D.; Mukherjee, R.C.; Agarwal, A.K.

    1976-01-01

    Cu-Cd alloys have been electrodeposited from a bath containing copper sulphate, cadmium sulphate, ammonium sulphate and ammonium hydroxide. Increase in current density or duration of electrolysis increases the cadmium content in the deposit. The brightness of the deposit and the cadmium content, however, fall with decrease in the concentration of ammonium sulphate or ammonium hydroxide in the electrolyte. Increase in current density usually increases the cathode efficiency, except in very concentrated baths, where the cathode efficiency first increases with current density, but later decreases. (author)

  17. 58 - 67 Diso et al.c

    African Journals Online (AJOL)

    User

    CdTe films have been electrodeposited by British Petroleum (BP) Company, and CdTe solar panels were manufactured. The plant had eight identical reaction chambers, each tank capable of handling 40, 0.55 m2 (14" × 61") substrates or 24,. 0.94 m2 (24" × 61") substrates (Cunnigham, 2000). In 2001, BP produced CdTe ...

  18. Nucleation and growth in alkaline zinc electrodeposition An Experimental and Theoretical study

    Science.gov (United States)

    Desai, Divyaraj

    The current work seeks to investigate the nucleation and growth of zinc electrodeposition in alkaline electrolyte, which is of commercial interest to alkaline zinc batteries for energy storage. The morphology of zinc growth places a severe limitation on the typical cycle life of such batteries. The formation of mossy zinc leads to a progressive deterioration of battery performance while zinc dendrites are responsible for sudden catastrophic battery failure. The problems are identified as the nucleation-controlled formation of mossy zinc and the transport-limited formation of dendritic zinc. Consequently, this thesis work seeks to investigate and accurately simulate the conditions under which such morphologies are formed. The nucleation and early-stage growth of Zn electrodeposits is studied on carbon-coated TEM grids. At low overpotentials, the morphology develops by aggregation at two distinct length scales: ~5 nm diameter monocrystalline nanoclusters form ~50nm diameter polycrystalline aggregates, and second, the aggregates form a branched network. Epitaxial (0002) growth above a critical overpotential leads to the formation of hexagonal single-crystals. A kinetic model is provided using the rate equations of vapor solidification to simulate the evolution of the different morphologies. On solving these equations, we show that aggregation is attributed to cluster impingement and cluster diffusion while single-crystal formation is attributed to direct attachment. The formation of dendritic zinc is investigated using in-operando transmission X-ray microscopy which is a unique technique for imaging metal electrodeposits. The nucleation density of zinc nuclei is lowered using polyaniline films to cover the active nucleation sites. The effect of overpotential is investigated and the morphology shows beautiful in-operando formation of symmetric zinc crystals. A linear perturbation model was developed to predict the growth and formation of these crystals to first

  19. Superhydrophobic surface fabricated on iron substrate by black chromium electrodeposition and its corrosion resistance property

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Bo [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Key Lab of Comprehensive and Highly Efficient Utilization of Salt Lake Resource, Chinese Academy of Science, Xining 810008, Qinghai (China); Feng, Haitao [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); Key Lab of Comprehensive and Highly Efficient Utilization of Salt Lake Resource, Chinese Academy of Science, Xining 810008, Qinghai (China); Lin, Feng [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Yabin [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); Key Lab of Comprehensive and Highly Efficient Utilization of Salt Lake Resource, Chinese Academy of Science, Xining 810008, Qinghai (China); Wang, Liping [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, Yaping [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); Key Lab of Comprehensive and Highly Efficient Utilization of Salt Lake Resource, Chinese Academy of Science, Xining 810008, Qinghai (China); Li, Wu, E-mail: liwu2016@126.com [Qinghai Institute of Salt Lakes, Chinese Academy of Sciences, Xining 810008, Qinghai (China); Key Lab of Comprehensive and Highly Efficient Utilization of Salt Lake Resource, Chinese Academy of Science, Xining 810008, Qinghai (China)

    2016-08-15

    Highlights: • Superhydrophobic surface was fabricated by black chromium electrodeposition and stearic acid modification. • The reaction process is simple, and of low cost, and no special instrument or environment is needed. • The obtained superhydrophobic surface presents good water repellency, and performs well at corrosion resistance. - Abstract: The fabrication of superhydrophobic surface on iron substrate is carried out through 20 min black chromium electrodeposition, followed by immersing in 0.05 M ethanolic stearic acid solution for 12 h. The resultant superhydrophobic complex film is characterized by scanning electron microscope (SEM), disperse Spectrometer (EDS), atomic force microscope (AFM), water contact angle (CA), sliding angle (SA) and X-ray photoelectron spectroscope (XPS), and its corrosion resistance property is measured with cyclic voltammetry (CV), linear polarization and electrochemical impedance spectroscopy (EIS). The results show that the fabricated superhydrophobic film has excellent water repellency (CA, 158.8°; SA, 2.1°) and significantly high corrosion resistance (1.31 × 10{sup 6} Ω cm{sup −2}) and excellent corrosion protection efficiency (99.94%).

  20. Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method

    International Nuclear Information System (INIS)

    Fauzi, F B; Ani, M H; Othman, R; Azhar, A Z A; Mohamed, M A; Herman, S H

    2015-01-01

    DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the deposition of zinc oxide (ZnO) on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate by electrodeposition. Metallic Zn film was deposited on substrates with varying deposition time from 15 to 120 seconds in very dilute zinc chloride (ZnCl 2 ) aqueous and subsequently oxidized at 150 °C to form ZnO/ITO coated PET junction. The deposited thin film was characterized via x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results from I-V measurement show the deposited ZnO exhibits pinched hysteresis loop. The hysteresis loop becomes smaller with increasing deposition time. The 15 seconds electrodeposition gave the largest hysteresis loop and largest value of resistive switching ratio of 1.067. The result of the synthesized ZnO on the flexible substrate can be one of the alternatives to replace the current memory system as the flexible memory system. (paper)

  1. Electrodeposition and characterization of manganese-bismuth system from chloride based acidic bath

    Energy Technology Data Exchange (ETDEWEB)

    Benfedda, B., E-mail: baya_pg@yahoo.f [Laboratoire de Physique et Chimie des Materiaux (LPCM), Universite M. Mammeri de Tizi-Ouzou (Algeria); Benbrahim, N.; Kadri, A. [Laboratoire de Physique et Chimie des Materiaux (LPCM), Universite M. Mammeri de Tizi-Ouzou (Algeria); Chainet, E. [Laboratoire d' Electrochimie et de Physico-chimie des Materiaux et des Interfaces (LEPMI), ENSEEG, 1130 rue de la piscine, B.P. 75, 38402 Saint Martin d' Heres, Grenoble (France); Charlot, F.; Coindeau, S. [C.M.T.C., Grenoble I.N.P. Bat Phelma Campus, Domaine Universitaire, B.P. 75, 1260 rue de la piscine, 38402 Saint Martin d' Heres (France)

    2011-01-01

    In this work, Mn-Bi system has been successfully electrodeposited on Cu/Si substrates from aqueous ammonium chloride containing electrolyte. A thermodynamic study of the electrolysis bath highlights the possible formation of manganese complexes (MnCl{sup +}, MnCl{sub 2},MnCl{sub 3}{sup -}) and bismuth complexes (BiCl{sup 2+},BiCl{sub 2}{sup +}, BiCl{sub 3},BiCl{sub 4}{sup -},BiCl{sub 5}{sup 2-},BiCl{sub 6}{sup 3-}). The mechanism process involving Mn and Bi electrodeposition is investigated by cyclic voltammetry. Mn-Bi films can be grown under potentiostatic control. The physico-chemical, morphological and structural characterizations of the deposits were carried out by scanning electron microscopy (SEM) and X-rays analysis (XRD). The results reveal a granular surface quality and a heterogeneous chemical composition of the films. The energy dispersive spectroscopy (EDS) analysis reveals the presence of manganese and bismuth peaks whose relative intensities vary according to the imposed potential and the position on the sample. The X-rays diffraction analysis showed three different crystalline phases: {alpha}-manganese (body centred cubic system), {gamma}-manganese (body centred tetragonal system) and bismuth (rhombohedral system).

  2. Gas Sensors Based on Electrodeposited Polymers

    Directory of Open Access Journals (Sweden)

    Boris Lakard

    2015-07-01

    Full Text Available Electrochemically deposited polymers, also called “synthetic metals”, have emerged as potential candidates for chemical sensing due to their interesting and tunable chemical, electrical, and structural properties. In particular, most of these polymers (including polypyrrole, polyaniline, polythiophene and their derivatives can be used as the sensitive layer of conductimetric gas sensors because of their conducting properties. An important advantage of polymer-based gas sensors is their efficiency at room temperature. This characteristic is interesting since most of the commercially-available sensors, usually based on metal oxides, work at high temperatures (300–400 °C. Consequently, polymer-based gas sensors are playing a growing role in the improvement of public health and environment control because they can lead to gas sensors operating with rapid detection, high sensitivity, small size, and specificity in atmospheric conditions. In this review, the recent advances in electrodeposited polymer-based gas sensors are summarized and discussed. It is shown that the sensing characteristics of electrodeposited polymers can be improved by chemical functionalization, nanostructuration, or mixing with other functional materials to form composites or hybrid materials.

  3. Effect of electrodeposition current density on the microstructure and the degradation of electroformed iron for degradable stents

    Energy Technology Data Exchange (ETDEWEB)

    Moravej, Maryam [Laboratory for Biomaterials and Bioengineering, Department of Mining, Metallurgy and Materials Engineering and University Hospital Research Center, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); Department of Mining, Metallurgy and Materials Engineering, Pavillon Adrien-Pouliot, 1065 avenue de la Medecine, Local 1745-E, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); Amira, Sofiene [Aluminium Technology Centre, Industrial Materials Institute, National Research Council Canada, 501, boul. de l' Universite Est, Saguenay, Que. G7H 8C3 (Canada); Prima, Frederic [Laboratory for Physical Metallurgy, Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, Paris 6 (France); Rahem, Ahmed [Aluminium Technology Centre, Industrial Materials Institute, National Research Council Canada, 501, boul. de l' Universite Est, Saguenay, Que. G7H 8C3 (Canada); Fiset, Michel [Department of Mining, Metallurgy and Materials Engineering, Pavillon Adrien-Pouliot, 1065 avenue de la Medecine, Local 1745-E, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); and others

    2011-12-15

    Pure iron has become one of the most interesting candidate materials for degradable metallic stents due to its high mechanical properties and moderate degradation. In this work we studied the effect of electrodeposition current density on microstructure and degradation of pure iron films electrodeposited on Ti alloy substrate for degradable metallic stent application. Iron sheets were produced by electrodeposition using four different current densities 1, 2, 5 and 10 A dm{sup -2}. The films were then studied by SEM (scanning electron microscope) and EBSD (electron backscatter diffraction) to observe the surface morphology, grain size and orientation. Potentiodynamic polarization and static immersion tests were used to determine the corrosion rate and to study the degradation behavior of iron films, respectively. The current density was found to significantly influence the texture, the grain size and the grain shape of the electrodeposited iron. At current densities of 1, 5 and 10 A dm{sup -2}, weak textures corresponding to Left-Pointing-Angle-Bracket 1 0 1 Right-Pointing-Angle-Bracket , Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket and Left-Pointing-Angle-Bracket 1 1 2 Right-Pointing-Angle-Bracket in the normal (electrodeposition) direction were obtained, respectively. At these current densities, average grain sizes smaller than 3 {mu}m were also obtained. However, at 2 A dm{sup -2}, a strong Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket //ND texture with density of 7.4 MUD was obtained with larger average grain size of 4.4 {mu}m. The microstructure of iron samples changed after annealing at 550 Degree-Sign C because of the induced recrystallization. Different corrosion rates were obtained from potentiodynamic polarization curves of iron films deposited at different current densities because of their microstructures. Fe-2 showed the lowest corrosion rate due to its larger grains size and its texture. The corrosion rates of all

  4. Single potential electrodeposition of nanostructured battery materials for lithium-ion batteries

    Science.gov (United States)

    Mosby, James Matthew

    different sizes, shapes, and surface areas. This is advantageous because high surface area materials benefit from improved kinetics for solid state transformations and from decreases in mechanical degradation that occurs during the lithiation and delithiation of battery materials. Intermetallic materials are an alternative to conventional anode materials because they have high capacities and react reversibly with lithium at potentials that hinder the dendrite formation of metallic lithium. Unfortunately, the volume expansion associated with the lithiation and delithiation of intermetallic materials is usually large (over 300%). With this in mind a procedure for the electrodeposition of Cu2Sb from aqueous solutions was developed and is presented in this thesis. Cu2Sb is an intermetallic that lithiates at potentials more positive than the potential needed to plate lithium metal, and has a volume expansion less than 100%. Electrodeposition of an intermetallic with a relatively small volume expansion and with high surface area morphology should dramatically reduce material degradation during battery cycling, thus promoting the life of the material. To electrodeposit Cu2Sb from aqueous solutions, soluble salts of Cu2+ and Sb3+ were needed. There are many Cu2+ salts that are highly soluble in water, but most Sb 3+ salts cause formation of Sb2O3 in aqueous solutions. To obtain Sb3+ in aqueous solutions, citric acid was used as a complexing agent. The results presented in this dissertation show that solution speciation plays an important role in the electrochemistry of aqueous citrate solutions of both copper and antimony. The cyclic voltammograms (CVs) presented here show that the reduction potential of Cu2+ shifted in the negative direction and the reduction potential of Sb 3+ shifted in the positive direction with an increase in pH. Also, Cu2Sb films were deposited at a single potential (-1050 mV vs. SSCE) from aqueous solutions at pH 6. We determined that the deposition

  5. Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

    Science.gov (United States)

    Phillips, Adam B.; Khanal, Rajendra R.; Song, Zhaoning; Watthage, Suneth C.; Kormanyos, Kenneth R.; Heben, Michael J.

    2015-12-01

    Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

  6. Thin Film Photovoltaic Cells on Flexible Substrates Integrated with Energy Storage

    Science.gov (United States)

    2011-11-30

    Synthesis of CZTS thin films using TBDS as a sulfur source Thin film solar cells based on Cu(In,Ga)(S,Se)2 and CdTe have demonstrated significant...efficient ones at the laboratory level and have demonstrated efficincies in the range of-20% [3]. However, both CIGS and CdTe based thin film solar... modules . References [1] R. Liu, J. Duay, S.B. Lee, ACS Nano, 4 (2010) 4299-4307. [2] A.L.M. Reddy, M.M. Shaijumon, S.R. Gowda, P.M. Ajayan Summary

  7. Analysis of tellurium thin films electrodeposition from acidic citric bath

    Energy Technology Data Exchange (ETDEWEB)

    Kowalik, Remigiusz; Kutyła, Dawid [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Mech, Krzysztof [AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, al. A. Mickiewicza 30, Krakow (Poland); Żabiński, Piotr, E-mail: rkowalik@agh.edu.pl [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Krakow (Poland)

    2016-12-01

    This work presents the description of the electrochemical process of formation thin tellurium layers from citrate acidic solution. The suggested methodology consists in the preparation of stable acidic baths with high content of tellurium, and with the addition of citrate acid. In order to analyse the mechanism of the process of tellurium deposition, the electroanalytical tests were conducted. The tests of cyclic voltammetry and hydrodynamic ones were performed with the use of polycrystalline gold disk electrode. The range of potentials in which deposition of tellurium in direct four-electron process is possible was determined as well as the reduction of deposited Te° to Te{sup 2−} and its re-deposition as a result of the comproportionation reaction. On the basis of the obtained results, the deposition of tellurium was conducted by the potentiostatic method. The influence of a deposition potential and a concentration of TeO{sub 2} in the solution on the rate of tellurium coatings deposition was examined. The presence of tellurium was confirmed by X-ray spectrofluorometry and electron probe microanalysis. In order to determine the phase composition and the morphology, the obtained coatings were analysed with the use of x-ray diffraction and scanning electron microscopy.

  8. Giant magnetoresistance of electrodeposited Cu–Co–Ni alloy films

    Indian Academy of Sciences (India)

    MR) ratio in this study is defined as (R(0) − R(H = 8.5 kOe))/R(H = 8.5 kOe) where R(H = 8.5 kOe) is the resistance of sample measured under the applied magnetic field of 8.5 kOe and R(0) is the resistance when no magnetic field is applied.

  9. Electrodeposition route to synthesize cigs films – an economical way ...

    African Journals Online (AJOL)

    user

    To develop high efficiency photo- voltaics solar cells have to be designed from low dimensional semi conductor structures. For achieving long wavelength absorption in solar cells incorporation of Quantum Dots is necessary (Kamat, 2008). Moreover these solar cells are not limited by selection rules for optical transitions in ...

  10. Thin Film Electrodeposition of Ir(III) Cyclometallated Complexes

    OpenAIRE

    Ionescu, Andreea; Aiello, Iolinda; Crispini, Alessandra; Godbert, Nicolas

    2016-01-01

    Novel electropolymerizable Ir(III) cyclometallated complexes have been synthesized and characterized. In these complexes the cyclometallated ligands are either 2-phenylpyridine H(PhPy) or benzothiazole-triphenylamine H(BzTh-tpa), while the Ir(III) coordination sphere is completed by a Schiff base substituted with a triphenylamine fragment. A complete electrochemical study has been conducted on all complexes, in order to verify the feasibility of electropolymerization and to elucidate the role...

  11. Electrodeposition Painting of Metal Substrates: Pinholing in Surface Films,

    Science.gov (United States)

    1978-08-01

    New Zealand Librarian, Auckland Industrial Development Division, New Zealand . _ _ _ _ _ __ _ _ _ I - ...Baycryl L461jW, was from a stock supplied by Bayer (Australia) Ltd. (1) Ingredients Baycryl L461W (552 in isobutanol) 160 g NN—dimethylethanolamine 4.7...Librarian , R.A.N. Research Laboratory Document Exchange Centre (16 copies) Principal Librarian , Campbell Park Library ADSATIS Annex Central Office

  12. Fabrication of CdTe quantum dots-apoferritin arrays for detection of dopamine

    Science.gov (United States)

    Le, Thi Hoa; Kim, Ji Hyeon; Park, Sang Joon

    2017-06-01

    A method was proposed for detecting dopamine using a two-dimensional CdTe quantum dots (QDs)-apoferritin array fabricated on a modified silicon (Si) surface. First, CdTe QDs were synthesized in the cavity of horse spleen apoferritin (HsAFr). Then, the characterization of CdTe QDs in apoferritin was performed using photoluminescence (PL) spectroscopy. Transmission electron microscopy was used to analyze the size and structure of CdTe QDs. An atomic force microscopy image was obtained to evaluate the topography of the Si surface. In addition, the PL change resulting from the conjugation reaction of the CdTe QDs-apoferritin array with dopamine was investigated. When the array was linked to dopamine, a significant quenching of fluorescence was observed. Accordingly, the CdTe QDs-apoferritin arrays could be employed as useful sensing media for dopamine detection.

  13. Investigation of electronic quality of electrodeposited cadmium sulphide layers from thiourea precursor for use in large area electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ojo, A.A., E-mail: chartell2006@yahoo.com; Dharmadasa, I.M.

    2016-09-01

    CdS layers used in thin film solar cells and other electronic devices are usually grown by wet chemical methods using CdCl{sub 2} as the Cadmium source and either Na{sub 2}S{sub 2}O{sub 3}, NH{sub 4}S{sub 2}O{sub 3} or NH{sub 2}CSNH{sub 2} as Sulphur sources. Obviously, one of the sulphur precursors should produce more suitable CdS layers required to give the highest performing devices. This can only be achieved by comprehensive experimental work on growth and characterisation of CdS layers from the above mentioned sulphur sources. This paper presents the results observed on CdS layers grown by electrodepositing using two electrode configuration and thiourea as the sulphur precursor. X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX) and photoelectrochemical (PEC) cell methods have been used to characterise the material properties. In order to test and study the electronic device quality of the layers, ohmic and rectifying contacts were fabricated on the electroplated layers. Schottky barriers, formed on the layers were also compared with previously reported work on Chemical Bath Deposited CBD-CdS layers and bulk single crystals of CdS. Comparatively, Schottky diodes fabricated on electroplated CdS layers using two-electrode system and thiourea precursor exhibit excellent electronic properties suitable for electronic devices such as thin film solar panels and large area display devices. - Highlights: • Precipitate-free electrodeposition of CdS is achievable using Thiourea precursor. • Electrodeposition of CdS using 2-electrode configuration. • The electrodeposited CdS shows excellent electronic properties. • Exploration of the effect of heat treatment temperature and heat treatment duration.

  14. Luminescence effects of ion-beam bombardment of CdTe surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Olvera, J., E-mail: javier.olvera@uam.e [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Plaza, J.L.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2009-09-15

    In the present work, we report the effect of low-energy ion bombardment on CdTe surfaces. The effect is revealed by FESEM images and photoluminescence (PL) measurements carried out before and after irradiation of CdTe polycrystals by means of an ion-beam sputtering (IBS) system. An important improvement in the luminescence of CdTe was observed in the irradiated areas, related to defect-free surfaces.

  15. A Study on the Effect of Electrodeposition Parameters on the Morphology of Porous Nickel Electrodeposits

    Science.gov (United States)

    Sengupta, Srijan; Patra, Arghya; Jena, Sambedan; Das, Karabi; Das, Siddhartha

    2018-03-01

    In this study, the electrodeposition of nickel foam by dynamic hydrogen bubble-template method is optimized, and the effects of key deposition parameters (applied voltage and deposition time) and bath composition (concentration of Ni2+, pH of the bath, and roles of Cl- and SO4 2- ions) on pore size, distribution, and morphology and crystal structure are studied. Nickel deposit from 0.1 M NiCl2 bath concentration is able to produce the honeycomb-like structure with regular-sized holes. Honeycomb-like structure with cauliflower morphology is deposited at higher applied voltages of 7, 8, and 9 V; and a critical time (>3 minutes) is required for the development of the foamy structure. Compressive residual stresses are developed in the porous electrodeposits after 30 seconds of deposition time (-189.0 MPa), and the nature of the residual stress remains compressive upto 10 minutes of deposition time (-1098.6 MPa). Effect of pH is more pronounced in a chloride bath compared with a sulfate bath. The increasing nature of pore size in nickel electrodeposits plated from a chloride bath (varying from 21 to 48 μm), and the constant pore size (in the range of 22 to 24 μm) in deposits plated from a sulfate bath, can be ascribed to the striking difference in the magnitude of the corresponding current-time profiles.

  16. Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.; Abbas, Ali; Burst, James M.; Mahabaduge, Hasitha P.; Metzger, Wyatt K.; Walls, John M.; Lonergan, Mark C.; Barnes, Teresa M.; Wolden, Colin A.

    2016-12-01

    Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

  17. Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.; Zweibel, K.; von Roedern, B.

    2002-05-01

    II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% for a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.

  18. Electrochemical processing of high-Tc Bi (Pb)–Sr–Ca–CuO thin films

    Indian Academy of Sciences (India)

    Superconducting thin films of Bi(Pb)–Sr–Ca–CuO system were prepared by depositing the film onto silver substrate by d.c. electrodeposition technique with dimethyl sulphoxide bath in order to examine the effect of Pb addition to the BSCCO system. The films were deposited at the potential of – 0.8 V vs saturated calomel ...

  19. Californium Electrodepositions at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Boll, Rose Ann [ORNL

    2015-01-01

    Electrodepositions of californium isotopes were successfully performed at Oak Ridge National Laboratory (ORNL) during the past year involving two different types of deposition solutions, ammonium acetate (NH4C2H3O2) and isobutanol ((CH3)2CHCH2OH). A californium product that was decay enriched in 251Cf was recovered for use in super-heavy element (SHE) research. This neutron-rich isotope, 251Cf, provides target material for SHE research for the potential discovery of heavier isotopes of Z=118. The californium material was recovered from aged 252Cf neutron sources in storage at ORNL. These sources have decayed for over 30 years, thus providing material with a very high 251Cf-to-252Cf ratio. After the source capsules were opened, the californium was purified and then electrodeposited using the isobutanol method onto thin titanium foils for use in an accelerator at the Joint Institute for Nuclear Research in Dubna, Russia. Another deposition method, ammonium acetate, was used to produce a deposition containing 1.7 0.1 Ci of 252Cf onto a stainless steel substrate. This was the largest single electrodeposition of 252Cf ever prepared. The 252Cf material was initially purified using traditional ion exchange media, such as AG50-AHIB and AG50-HCl, and further purified using a TEVA-NH4SCN system to remove any lanthanides, resulting in the recovery of 3.6 0.1 mg of purified 252Cf. The ammonium acetate deposition was run with a current of 1.0 amp, resulting in a 91.5% deposition yield. Purification and handling of the highly radioactive californium material created additional challenges in the production of these sources.

  20. Influence of electrodeposition parameters on the characteristics of ...

    Indian Academy of Sciences (India)

    SOFC) interconnection applications because of their high conductivity and good oxidation resistance. In the present study, manganese and cobalt are electrodeposited onCrofer 22APU ferritic stainless steel. The effects of current density, pH, ...