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Sample records for cdte films electrodeposited

  1. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Science.gov (United States)

    Luo, H.; Ma, L. G.; Xie, W. M.; Wei, Z. L.; Gao, K. G.; Zhang, F. M.; Wu, X. S.

    2016-04-01

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na2TeO3 instead of the usually used TeO2. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells.

  2. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, H.; Ma, L.G.; Xie, W.M.; Wei, Z.L.; Gao, K.G.; Zhang, F.M.; Wu, X.S. [Nanjing University, Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructures, School of Physics, Nanjing (China)

    2016-04-15

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na{sub 2}TeO{sub 3} instead of the usually used TeO{sub 2}. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells. (orig.)

  3. Electronic structure of electrodeposited thin film CdTe solar cells

    Science.gov (United States)

    Ullal, H. S.

    1988-05-01

    Independent experimental verification done at four research laboratories, namely, Ametek, Colorado State University (CSU), Institute of Energy Conversion (IEC), and Solar Energy Research Institute (SERI) confirm the n-i-p model proposed by Ametek. The experiments done for the verification of the n-i-p structure are the high frequency capacitance-voltage, light and voltage bias quantum efficiency, and EBIC measurements. All experimental evidence suggests that the n-i-p model is appropriate for the existing n-CdS/i-CdTe/p-ZnTe cell structure. From the C-V measurements, the depletion width has been estimated at 1.7 to 2.0 microns and corresponds to the thickness of the CdTe film. This unique thin films device design has resulted in improved stability and a SERI-verified world record single-junction total area AM1.5 global efficiency of 11 percent. Further refinements in device design and cell processing should result in 12 to 13 percent efficiencies for thin-film CdTe solar cells in the not-too-distant future.

  4. Electronic structure of electrodeposited thin film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.

    1988-05-01

    Independent experimental verification done at four research laboratories, namely, Ametek, Colorado State University (CSU), Institute of Energy Conversion (IEC), and Solar Energy Research Institute (SERI) confirm the n-i-p model proposed by Ametek. The experiments done for the verification of the n-i-p structure are the high frequency capacitance-voltage, light and voltage bias quantum efficiency, and EBIC measurements. All experimental evidence suggests that the n-i-p model is appropriate for the existing n-CdS/i-CdTe/p-ZnTe cell structure. From the C-V measurements, the depletion width has been estimated at 1.7-2.0 ..mu..m and corresponds to the thickness of the CdTe film. This unique thin films device design has resulted in improved stability and a SERI-verified world record single-junction total area AM1.5 global efficiency of 11%. Further refinements in device design and cell processing should result in 12-13% efficiencies for thin-film CdTe solar cells in the not-too-distant future.

  5. Preparation and characterisation of nearly stoichiometric CdTe films from a non-aqueous electrodeposition bath

    Science.gov (United States)

    Gore, R. B.; Pandey, Rajendra Kumar; Kumar, S. R.

    1991-06-01

    The cathodic polarisation characteristics and the growth behaviour of CdTe films in an ethylene-glycol-based bath have been studied. Conditions favouring stoichiometric deposition have been examined. The influence of the processing variables on the film properties has also been discussed with the help of the XRD, SEM and XPS studies. It has been shown that the films deposited potentiostatically at -0.8 V are stoichiometric and single phase.

  6. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  7. Electrodeposited CdTe and HgCdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Basol, B.M.

    1988-01-15

    The processing steps necessary for producing high efficiency electrodeposited CdTe and HgCdTe solar cells are described. The key step in obtaining solar cell grade p-type CdTe and HgCdTe is the 'type conversion-junction formation' (TCJF) process. The TCJF process involves the heat treatment of the as-deposited n-type CdTe and HgCdTe layers at around 400 /sup 0/C. This procedure converts these n-type films into high resistivity p type and forms a rectifying junction between them and the underlying n-type window layers. Possible effects of oxygen on the TCJF process are discussed. The results of studies made on the structural, electrical and optical properties of the electrodeposited CdS, CdTe and HgCdTe films are presented. The resistivity of the electrodeposited HgCdTe can be made lower than that of CdTe. Consequently, solar cells made using the HgCdTe films have, on the average, better fill factors than those made using the CdTe layers, HgCdTe is also attractive for tandem-cell applications because of its variable band gap which can be easily tuned to the desired value. CdS/CdTe and CdS/HgCdTe heterojunction solar cells with 10.3% and 10.6% efficiency have been demonstrated using electrodeposition techniques and the TCJF process.

  8. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    OpenAIRE

    Obi K. Echendu; Imyhamy M. Dharmadasa

    2015-01-01

    A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding impro...

  9. Electrodeposition of CdTe by potentiostatic and periodic pulse techniques

    Energy Technology Data Exchange (ETDEWEB)

    Moorthy Babu, S.; Dhanasekaran, R.; Ramasamy, P. (Crystal Growth Centre, Anna Univ., Madras (India))

    1991-07-15

    Cadmium telluride was electrodeposited from an aqueous solution containing the species CdCl{sub 2} and TeO{sub 2} by potentiostatic and periodic pulse techniques. The effect of different parameters such as concentration of the individual species, hydrogen ion concentration, applied potential and temperature are analysed to obtain optimum conditions for codeposition. X-ray diffractograms, X-ray microprobe analysis, scanning electron microscopy and voltammetry were employed to understand the crystalline nature, elemental composition and surface properties of the deposited films. A theoretical model has been developed for the electrodeposition of CdTe to understand the mechanism involved in the process. The results are discussed. (orig.).

  10. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  11. Electrodeposited FePt films

    OpenAIRE

    Rhen, Fernando M. F.; Hinds, Gareth; O'Reilly, Cora; Coey, John Michael David

    2003-01-01

    A novel bath for electrodepositing FePt films was developed and films were electrodeposited on copper substrates with thickness up to 0.45 m. The magnetic and structural properties of the films were measured. The films developed 0.3-T coercivity after annealing at 400 C and formed the 10 FePt phase. Films are shiny and smooth. Morphology was found to be affected by the annealing process.

  12. Electrochemical deposition and characterization of CdTe polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bonilla, S.; Dalchiele, E.A. (Inst. de Fisica, Facultad de Ingenieria, Montevideo (Uruguay))

    1991-10-10

    CdTe thin films have been prepared by potentiostatic electrodeposition from acidic solutions containing CdSO{sub 4} and TeO{sub 2}, or CdCl{sub 2} and TeO{sub 2}. The films were characterized by X-ray diffraction and scanning electron microscopy. The influence of the deposition potential and bath temperature on the presence of tellurium and crystallite size was studied. The effect of annealing treatment on the increase in grain size of the electrochemically deposited CdTe films has been investigated. (orig.).

  13. Resistivity and activation energy of CdTe electrodeposited at various Cd(II) concentrations

    International Nuclear Information System (INIS)

    This paper reports on two methods investigated for incorporating excess cadmium into CdTe electrodeposited from tri-n-butyl-phosphine telluride. These were: (i) variation of the Cd(II):Te concentration ratio in situ from 0.009 to 0.30 and (ii) the diffusion of metallic cadmium at high temperature. Resistivity and light response of various samples were studied after they had been removed from their substrates. Scanning electron microscopy was used to examine the morphology of some of the samples. For the series of films in which the Cd(II):Te concentration ratio was varied in situ the resistivity was found to increase moderately with increasing Cd(II) concentration. However, the activation energy was found to increase significantly only at the highest Cd(II):Te ratio, otherwise it remained more or less constant. The light response was similarly unaffected. When cadmium was diffused into the film, the light response was increased markedly and the resistivity generally decreased while the activation energy remained more or less the same

  14. Resistivity and activation energy of CdTe electrodeposited at various Cd(II) concentrations

    Energy Technology Data Exchange (ETDEWEB)

    von Windheim, J.A.; Cocivera, M. (Guelph-Waterloo Centre for Graduate Work in Chemistry, Univ. of Guelph, Guelph, Ontario N1G 2WI (CA))

    1991-01-01

    This paper reports on two methods investigated for incorporating excess cadmium into CdTe electrodeposited from tri-n-butyl-phosphine telluride. These were: (i) variation of the Cd(II):Te concentration ratio in situ from 0.009 to 0.30 and (ii) the diffusion of metallic cadmium at high temperature. Resistivity and light response of various samples were studied after they had been removed from their substrates. Scanning electron microscopy was used to examine the morphology of some of the samples. For the series of films in which the Cd(II):Te concentration ratio was varied in situ the resistivity was found to increase moderately with increasing Cd(II) concentration. However, the activation energy was found to increase significantly only at the highest Cd(II):Te ratio, otherwise it remained more or less constant. The light response was similarly unaffected. When cadmium was diffused into the film, the light response was increased markedly and the resistivity generally decreased while the activation energy remained more or less the same.

  15. CdTe Films Deposited by Closed-space Sublimation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at substrate temperature higher than 400℃. And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity. Treatment with CdCl2 methanol solution promotes the crystallite growth of CdTe films during annealing.

  16. Growth of CdTe: Al films

    International Nuclear Information System (INIS)

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  17. Patterned self-assembled film guided electrodeposition

    Institute of Scientific and Technical Information of China (English)

    ZHOU; Feng; LI; Bin; XU; Tao; CHEN; Miao; HAO; Jingcheng; LI

    2004-01-01

    The paper describes the fabrication of polypyrrole (PPy) microstructures through patterned self-assembled film guided electrodeposition. Thus the patterned self-assembled monolayer is prepared by microcontact printing (μCP) and used as the template in the electrodeposition of PPy. It has been found that the self-assembled monolayer plays completely different roles on different substrates in directing the deposition of the PPy. Namely, the electrodeposition mainly occurs on the exposed area of the gold substrates patterned with dodecanethiol (DDT) and octadecanelthiol (ODT) and on the indium tin oxide (ITO) substrate patterned with octadecyltrichlorosilane (OTS), while PPy nucleates on the OTS covered area and no deposition is found on the exposed area of a semiconductor substrate (silicon). This is attributed to the cooperative effect between the substrate conductivity and the compatibility of the PPy oligomer with the covered or exposed area of the substrate surface.

  18. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  19. Growth and Characterization of CdTe Thin Films on CdS/TCO/glass superstrate

    Science.gov (United States)

    Oladeji, Isaiah O.; Chow, Lee; Zhou, Dan; Stevie, Fred

    1998-11-01

    The performance of CdTe/CdS/TCO/glass structure which is generally used as a solar cell depends on the impurities incorporated in the system before and after electrodeposition of CdTe thin films. In this report we present a detailed investigation of this structure using secondary ion mass spectrometry(SIMS), x-ray microanalysis, x-ray diffraction(XRD), and scanning electron microscopy(SEM) to identify those impurities. We also discuss possible ways of minimizing or eliminating some of these impurities in order to improve the cell efficiency.

  20. Grain Boundary Engineering of Electrodeposited Thin Films

    DEFF Research Database (Denmark)

    Alimadadi, Hossein

    Grain boundary engineering aims for a deliberate manipulation of the grain boundary characteristics to improve the properties of polycrystalline materials. Despite the emergence of some successful industrial applications, the mechanism(s) by which the boundary specific properties can be improved...... to engineer new materials. In this study, one of the most widely used electrolytes for electrodeposition is chosen for the synthesis of nickel films and based on thorough characterization of the boundaries the potentials in grain boundary engineering are outlined. The internal structure of the nickel films...... of the favorable boundaries that break the network of general grain boundaries. Successful dedicated synthesis of a textured nickel film fulfilling the requirements of grain boundary engineered materials, suggests improved boundary specific properties. However, the textured nickel film shows fairly low...

  1. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J U; Mao, D [Colorado School of Mines, Golden, CO (United States)

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  2. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  3. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

    International Nuclear Information System (INIS)

    CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm−2 and 47.8 mAcm−2, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10−7 Acm−2 and 4.0 × 10−7 Acm−2 respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High Jsc Schottky barrier solar cells. • CdCl2 + CdF2 treatment

  4. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  5. Thin-film CdTe cells: Reducing the CdTe

    International Nuclear Information System (INIS)

    Polycrystalline thin-film CdTe is currently the dominant thin-film technology in world-wide PV manufacturing. With finite Te resources world-wide, it is appropriate to consider the limits to reducing the thickness of the CdTe layer in these devices. In our laboratory we have emphasized the use of magnetron sputtering for both CdS and CdTe achieving AM1.5 efficiency over 13% on 3 mm soda-lime glass with commercial TCO and 14% on 1 mm aluminosilicate glass. This deposition technique is well suited to good control of very thin layers and yields relatively small grain size which also facilitates high performance with ultra-thin layers. This paper describes our magnetron sputtering studies for fabrication of very thin CdTe cells. Our thinnest cells had CdTe thicknesses of 1 μm, 0.5 μm and 0.3 μm and yielded efficiencies of 12%, 9.7% and 6.8% respectively. With thinner cells Voc, FF and Jsc are reduced. Current-voltage (J-V), temperature dependent J-V (J-V-T) and apparent quantum efficiency (AQE) measurements provide valuable information for understanding and optimizing cell performance. We find that the stability under light soak appears not to depend on CdTe thickness from 2.5 to 0.5 μm. The use of semitransparent back contacts allows the study of bifacial response which is particularly useful in understanding carrier collection in the very thin devices.

  6. Electrodeposition of Sr-Ti alloy films from DMSO bath

    International Nuclear Information System (INIS)

    Electrodeposition of Sr-Ti alloy films from non aqueous dimethyl sulphoxide (DMSO) bath has been carried out onto stainless steel and fluorine doped tin oxide (FTO) coated glass substrate. The preparative parameters were studied and optimised. Alloy films with thickness 2 to 3 microns were obtained for 30 minutes of deposition. The films were uniform, dense and adhesive to the substrate. The electrodeposited Sr-Ti alloy films were oxidised at higher temperature in order to obtain SrTiO3 films. Electrical and microstructural properties were carried out. (author). 6 refs., 6 figs

  7. Design of a thin film CdTe solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P.V.

    1988-01-15

    Cadmium telluride was originally considered for thin film solar cells because of its optimum band gap, high optical absorption coefficient and ability to be doped. Furthermore, it is a stable compound which can be produced by a wide variety of methods from stable raw materials. As thin film photovoltaics mature, however, it is clear that several more subtle attributes have a significant impact on the viability of commercialization. We discuss the observations which have provided insight and direction to Ametek's CdTe solar cell program. Rather than try to modify the inherent material properties of CdTe, advances have been made by designing a solar cell that exploits existing properties. Specifically, the tendency to self-compensate, which makes low resistance contacting difficult, is turned into an advantage in the n-i-p configuration; the CdTe provides an intrinsic layer with good carrier collection efficiency.

  8. Electron transient transport in CdTe polycrystalline films

    Science.gov (United States)

    Ramírez-Bon, R.; Sánchez-Sinencio, F.; González de la Cruz, G.; Zelaya, O.

    1991-11-01

    Electron transient currents between coplanar electrodes have been measured in intrinsic polycrystalline films of CdTe, by means of the time of flight technique. The experimental results: electron transient current vs time, transit time vs voltage and the temperature dependence of the electron drift mobility, show features characteristics of dispersive electrical transport similar to that observed in disordered solids.

  9. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  10. Magnetic properties of electrodeposited Co-W thin films

    NARCIS (Netherlands)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.

    1987-01-01

    Thin films of Co-W, 300-500 Å thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a v

  11. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    Science.gov (United States)

    Tang, H. P.; Feng, J. Y.; Fan, Y. D.; Li, H. D.

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480°C, while CdTe growth inboth (100) and (111) orientations occured when the substrate preheating temperature was above 550°C. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec.

  12. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tang, H.P.; Feng, J.Y.; Fan, Y.D.; Li, H.D. (Dept. of Materials Science and Engineering, Tsinghua Univ., Beijing (China))

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480degC, while CdTe growth in both (100) and (111) orientations occurred when the substrate preheating temperature was above 550degC. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec. (orig.).

  13. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm2, which is higher than that of samples prepared at other temperatures. Furthermore, CdCl2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl2 treatment improved to 2.97 mA/cm2, indicating a potential application in photovoltaic devices

  14. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Huizhen [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Ma, Jinwen [College of New Energy, Bohai University, Jinzhou, Liaoning 121013 (China); Mu, Yannan [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Department of Physics and Chemistry, Heihe University, Heihe 164300 (China); Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Yang, Haibin, E-mail: yanghb@jlu.edu.cn [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China)

    2015-06-15

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm{sup 2}, which is higher than that of samples prepared at other temperatures. Furthermore, CdCl{sub 2} treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl{sub 2} treatment improved to 2.97 mA/cm{sup 2}, indicating a potential application in photovoltaic devices.

  15. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    OpenAIRE

    Wagner Anacleto Pinheiro; Vivienne Denise Falcão; Leila Rosa de Oliveira Cruz; Carlos Luiz Ferreira

    2006-01-01

    Unlike other thin film deposition techniques, close spaced sublimation (CSS) requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate) and a sintered C...

  16. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  17. Electrochromic Characterization of Electrodeposited WO3 Thin Films

    Science.gov (United States)

    Vijayalakshmi, R.; Jayachandran, M.; Sanjeeviraja, C.

    2002-12-01

    The electrochromic properties of certain transition metal oxides have been studied for several years resulting in commercial films are deposited as thin layers (0.1 to 0.4 microns) onto a transparent conductive automotive mirror and sun-glass products. The largest potential application of electrochromics is in window to regulate heat and light flow. Fabrication cost is one of the greatest barriers for large area development of the smart windows. Tungsten trioxide (WO3) can be colored deeply in with an optical irradiation of appropriate energy (photochromism) or with an applied electric field (electrochromism). These processes have received considerable attention because of their potential application in electrochromic windows, display devices, sensors, and so on. For these purposes, tungsten trioxide films prepared by various physical methods such as molecular beam epitaxy, CVD, etc have been reported. These methods are generally expensive and it is difficult to form large area films. However electrodeposition method is probably most economical method for making the films in addition to its relative ease in forming in large area films. In this paper, tungsten trioxide (WO3) films are prepared through the electrodeposition route and these films are used to study the electrochromic behavior in the various electrolytes by changing the concentrations. When coloration, the film attains deep blue color and in reduced state it becomes colorless. After the ion intercalation, the optical properties are also studied in the UV-Vis-NIR region.

  18. Stable, high efficiency thin film solar cells produced by electrodeposition of cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Turner, A.K.; Woodcock, J.M.; Ozsan, M.E.; Summers, J.G.; Barker, J.; Binns, S.; Buchanan, K.; Chai, C.; Dennison, S.; Hart, R.; Johnson, D.; Marshall, R.; Oktik, S.; Patterson, M.; Perks, R.; Roberts, S.; Sadeghi, M.; Sherborne, J.; Szubert, J.; Webster, S. (BP Solar, Solar House, Leatherhead (United Kingdom))

    1991-12-01

    The highest known efficiency of 9.5% for a 300x300 mm series interconnected cadmium telluride solar cell is reported. In addition, efficiencies of up to 13% have been measured for small cells based on electrodeposited CdTe. The stability of modules in outdoor tests is discussed and an outline is given of the device fabrication procedure. (orig.).

  19. Piezoelectric film electro-deposition for optical fiber sensor with ZnO coating

    Institute of Scientific and Technical Information of China (English)

    Li Zhou; Ping Gu; Ya Zhou

    2008-01-01

    The piezoelectric film electro-deposition for optical fiber sensor with ZnO coating is studied. The zinc oxide plating film is made on the copper surface directly by cathodic electro-deposition in the Zn(NO3)2 single salt aqueous solution systems. The influences of main experimental conditions on the properties of ZnO thin film in the electro-deposition processes are analyzed and a stable, practical and economic technique is obtained.

  20. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  1. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu)

    OpenAIRE

    P. Marwoto; N.M. Darmaputra; Sugianto -; Othaman, Z.; E. Wibowo; S.Y. Astuti

    2012-01-01

    Film tipis CdTe dengan doping tembaga (Cu) berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO) dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2%) terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM) dan hasil analisis struktur dengan X-Ray Diffraction (XRD) menunjukkan bahwa film CdTe:Cu(2%) mempunyai citra perm...

  2. Aluminum doping of CdTe polycrystalline films starting from the heterostructure CdTe/Al

    OpenAIRE

    Becerril, M.; O. Vigil-Galán; G. Contreras-Puente; O. Zelaya-Angel

    2011-01-01

    Aluminum doped CdTe polycrystalline films were obtained from the heterostructure CdTe/Al/Corning glass. The aluminum was deposited by thermal vacuum evaporation and the CdTe by sputtering of a CdTe target. The aluminum was introduced into the lattice of the CdTe from a thermal annealed to the CdTe/Al/Corning glas heterostructure. The electrical, structural, nd optical properties were analyzed as a function of the Al concentrations. It found that when Al is incorporated, the electrical resisti...

  3. Flexible CdTe solar cells on polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, A.N.; Romeo, A.; Baetzner, D.; Zogg, H. [ETH Swiss Federal Inst. of Technology, Thin Film Physics Group, Zurich (Switzerland)

    2001-07-01

    Lightweight and flexible CdTe/CdS solar cells on polyimide films have been developed in a 'superstrate configuration' where the light is absorbed in CdTe after passing through the polyimide substrate. The average optical transmission of the approximately 10-{mu}m-thin spin-coated polyimide substrate layer is more than {approx}75% for wavelengths above 550 nm. RF magnetron sputtering was used to grow transparent conducting ZnO:Al layers on polyimide films. CdTe/CdS layers were grown by evaporation of compounds, and a CdCl{sub 2} annealing treatment was applied for the recrystallisation and junction activation. Solar cells of 8.6% efficiency with V{sub oc} = 763 mV, I{sub sc} = 20.3 mA/cm{sup 2} and FF = 55.7% were obtained. (Author)

  4. Electrodeposition of chalcopyrite films from ionic liquid electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Shivagan, D.D. [Department of Chemistry, University of Bath, BATH BA2 7AY (United Kingdom)]. E-mail: d.shivagan@bath.ac.uk; Dale, P.J. [Department of Chemistry, University of Bath, BATH BA2 7AY (United Kingdom); Samantilleke, A.P. [Department of Chemistry, University of Bath, BATH BA2 7AY (United Kingdom); Peter, L.M. [Department of Chemistry, University of Bath, BATH BA2 7AY (United Kingdom)]. E-mail: l.m.peter@bath.ac.uk

    2007-05-31

    An air and water stable room-temperature ionic liquid based on choline chloride/urea eutectic mixture has been investigated as a system for the electrodeposition of CuInSe{sub 2} (CIS) and Cu(In,Ga)Se{sub 2} (CIGS) films for photovoltaic applications. Deposition potentials and bath compositions were optimized to obtain Cu-In, Cu-In-Se and Cu-In-Ga-Se precursor films, which were selenized in a tube furnace at 500 deg. C for 30 min to form CIS and CI(G)S films. Photo-electrochemical measurements on these selenized films showed p-type photoconductivity with band gaps of 1.0 eV and 1.09 eV, respectively, for CIS and CIGS. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), photocurrent spectroscopy and electrolyte electro-reflectance spectroscopy (EER)

  5. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    Institute of Scientific and Technical Information of China (English)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  6. Structural and optical characterization of CdTe quantum dots thin films

    International Nuclear Information System (INIS)

    Highlights: • CdTe QDs are prepared by hot injection method. • Thermally evaporated CdTeQDs thin films were prepared. • Structural characterization and analysis were done. • Optical parameters were studied. - Abstract: Cadmium telluride quantum dots (CdTe QDs) have been synthesized using hot-injection chemical technique. The CdTe QDs thin films were deposited onto optical flat fused quartz substrates using thermal evaporation technique. The CdTe QDs powder and the as deposited films were characterized using X-ray diffraction and high resolution transmission electron microscope (HRTEM). The X-ray analysis shows that both CdTe QDs powder and the as deposited films crystallize in cubic zinc-blende type structure with lattice parameter 6.46 Å and 6.45 Å, respectively. The X-ray calculation shows that the average crystallite size of the as deposited CdTe QDs films varied from 1.1 nm for the powder to 2.3 nm for the thin film. The HRTEM examination of the as deposited films shows that the average particle size vary from 2.5 nm for the powder to 2.7 nm for the thin film. For the as deposited films, the dependence of (αhν)2 on the incident photon energy indicates that the optical transitions within the film are allowed direct with energies observed at Eg1≅2eV and Eg2≅2.3eV which attributed to quantum confinement effect. The optical band gap increases from 1.5 eV for microstructure CdTe to 2 eV for nanostructure quantum dots which corresponding to wavelength(620 nm) so it is a great benefit to use CdTe quantum dots as solar harvesting devices application in solar spectrum region (400–800 nm). Urbach energy is calculated and found to be 360 meV which is higher than microstructure CdTe. The refractive index and refractive index dispersion of the as deposited CdTe QDs film has been calculated from transmission and reflection spectra. It has been found that the refractive index is reduced from (2.66) for microstructure CdTe to be (1.7) for CdTe quantum dots

  7. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    Science.gov (United States)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  8. Growth of CdTe thin films on graphene by close-spaced sublimation method

    International Nuclear Information System (INIS)

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400 nm/min with a bandgap energy of 1.45–1.49 eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes

  9. Electrodeposition of Vanadium Oxide/Manganese Oxide Hybrid Thin Films on Nanostructured Aluminum Substrates

    OpenAIRE

    Rehnlund, David; Valvo, Mario; Edström, Kristina; Nyholm, Leif

    2014-01-01

    Electrodeposition of functional coatings on aluminum electrodes in aqueous solutions often is impeded by the corrosion of aluminum. In the present work it is demonstrated that electrodeposition of vanadium, oxide films on nanostructured aluminum substrates can be achieved in acidic electrolytes employing a novel strategy in which a thin interspacing layer of manganese oxide is first electrodeposited on aluminum microrod substrates. Such deposited films, which were studied using SEM, XPS, XRD,...

  10. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  11. Electrodeposition and Characterization of Polyaniline Film

    Institute of Scientific and Technical Information of China (English)

    WANG Hong-zhi; ZHANG Peng; ZHANG Wei-guo; YAO Su-wei

    2012-01-01

    Polyaniline film was prepared by electrochemical method in an acidic solution of aniline.The micromorphology of the polyaniline film was transformed to three-dimensional network structure instead of little particles while the deposition time was extended.The peak wavelength of the photoluminescence spectrum was 491 nm.The luminous intensity increased with the extension of deposition time,and so did the electrochemical activity.

  12. Cathodic electrodeposition of cobalt oxide films using polyelectrolytes

    International Nuclear Information System (INIS)

    Composite films consisting of cobalt hydroxide and polyelectrolytes, such as poly(diallyldimethylammonium chloride) (PDDA) and polyethylenimine (PEI), were obtained by electrodeposition. In the proposed method, electrophoretic deposition of PDDA macromolecules or PEI-Co2+ complexes has been combined with cathodic electrosynthesis of cobalt hydroxide. By varying the concentration of the polyelectrolytes in solutions, the deposition time and the current density, the amount of deposited material and its composition can be varied. The composite deposits have been studied by scanning, transmission and atomic force microscopy, X-ray diffraction and thermogravimetric analysis. The obtained results have been compared with the results of investigation of pure cobalt hydroxide films. Heat treatment of the deposits resulted in decomposition of the hydroxide precursor and burning out of polymer to form cobalt oxide films. This method enables the formation of thick nanostructured oxide films

  13. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L. (National Renewable Energy Laboratory); Mayo, B. (Southern University and A& M College, Baton Rouge, LA)

    1998-10-26

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  14. Electrodeposition of magnetic thin films of cobalt on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Munford, M.L.; Seligman, L.; Sartorelli, M.L.; Voltolini, E.; Martins, L.F.O.; Schwarzacher, W.; Pasa, A.A. E-mail: pasa@fisica.ufsc.br

    2001-05-01

    To understand the electrodeposition of Co on Si, sulphate electrolytes containing two different Co ion concentrations were tested. Thin films with uniform thickness, ranging from 10 to 700 nm, low surface roughness, compact and metallic appearance were obtained for Co concentrations of 26 and 104 mM, respectively. Transverse MOKE measurements showed in-plane magnetization with the magnitude of the coercive field being dependent on the thickness of the deposited layers. VSM measurements with the applied field perpendicular to the surface allowed the observation of an out-of-plane remanent magnetization. These properties are of considerable interest for technological applications.

  15. The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    Ala J. Al-Douri

    2011-01-01

    Full Text Available Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5 were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K. The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films as Ts increases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2 decreases with increasing Ts and dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasing Ts and upon doping with Al at more than 0.5%. The carrier concentration decreases as Ts increases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

  16. Electrodeposition of Fe₃O₄ Thin Film and Its Application as Anode for Lithium Ion Batteries.

    Science.gov (United States)

    Zhao, Chongchong; Ma, Ying; Shen, Cai; Han, Weiqiang

    2016-01-01

    Fe₃O₄ films were prepared by electrodeposition under varying preparation conditions (current density, temperature, and time). The electrodeposited Fe₃O₄ were characterized in terms of morphology and composition using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The electrodeposited films were also tested as anode in coin cell systems. Fluoroethylene carbonate (FEC) electrolyte was found to improve the battery performance due to formation of a better solid electrolyte interface (SEI). Conducting polymer of polypyrrole (PPY) was coated on the surface of Fe₃O₄ films for the first time with the aim to improve the electric conductivity and to buffer volume expansion of Fe₃O₄ films. PMID:27398552

  17. Enhanced electrochromic coloration of poly(3-hexylthiophene) films by electrodeposited Au nanoparticles.

    Science.gov (United States)

    Nah, Yoon-Chae

    2013-05-01

    Au nanoparticles and poly(3-hexylthiophene) (P3HT) composite films were prepared by electrodeposition of Au nanoparticles using pulse-current electrodeposition followed by the spin coating of P3HT and their enhanced electrochromic coloration was investigated. A relatively uniformed Au nanoparticle was obtained by the controlled electrodeposition on indium tin oxide (ITO) substrate and plasmon absorption band of Au nanoparticles were observed. Optical and electrochemical properties of Au/P3HT composite films were compared with the pure P3HT films. The enhanced electrochromic absorption of the composite films was observed due to the surface plasmon resonance of the Au nanoparticles. PMID:23858881

  18. Orientational domains in metalorganic chemical vapor deposited CdTe(111) film on cube-textured Ni

    International Nuclear Information System (INIS)

    CdTe thin film was grown by metal organic chemical vapor deposition on cube-textured Ni substrate. The microstructures of the CdTe film and Ni substrate were studied using transmission electron microscopy (TEM) lattice imaging in cross sectional. The orientational relationships of multiple hetereoepitaxial domains in the CdTe film were examined by TEM diffraction. The observed epitaxy is [111]CdTe//[001]Ni. The adjacent domains in CdTe film have a 30° rotation with respect to each other as inferred by the observed different diffraction patterns obtained from different zone axes. The high resolution lattice imaging shows that lamellar twins dominate within each domain. Our results are compared with CdTe(111) film epitaxially grown on Si(001) substrate by molecular beam epitaxy reported in the literature. - Highlights: ► Epitaxial CdTe film grew on textured Ni at 350 °C despite of a large lattice mismatch. ► Epitaxial relationship is CdTe(111) parallel to Ni(001). ► 30° CdTe orientation domains inferred from transmission electron microscopy patterns ► Local inclined angle between CdTe and Ni at the interface is due to vertical mismatch. ► Single crystal-like epitaxial semiconductors can be grown on low cost metal sheet

  19. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  20. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-12-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  1. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  2. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 1013 cm-3, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 1015 cm-3. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  3. Film growth mechanism for electrodeposited copper indium selenide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yan, E-mail: yli@interphases.com; Shaikh, Shahid S., E-mail: ssshaikh@gmail.com; Menezes, Shalini, E-mail: smenezes@interphases.com

    2012-12-01

    The Cu{sub 2}Se-In{sub 2}Se{sub 3} system comprises several copper indium selenide (CIS) compounds with solar-matched bandgaps along with the optimum properties of the CuInSe{sub 2} compound. This work investigates electrochemical growth of CIS films under various conditions, initially identified with cyclic voltammetry. The film growth, monitored with X-ray fluorescence analysis, shows excellent composition and thickness uniformity. The results agree with secondary ion mass spectroscopy profiles and X-ray diffraction data, indicating the conversion of initially formed binary phases to homogenous ternary compound. Deposition potential and substrate/electrolyte interface control the film formation mechanism and hence its composition. Electrolyte composition and agitation influence the film thickness. Judicious combination of process parameters is essential to obtain CIS films with optimum properties. - Highlights: Black-Right-Pointing-Pointer In-rich copper indium selenide (CIS) compounds offer wide bandgaps. Black-Right-Pointing-Pointer Electrodeposition leads to excellent composition and thickness uniformity. Black-Right-Pointing-Pointer Initial binary phases convert to homogenous ternary compound. Black-Right-Pointing-Pointer Thermodynamic driving force leads to self stabilizing stoichiometries. Black-Right-Pointing-Pointer Process parameter control enables optimizing CIS film properties.

  4. Electrodeposition of Ni-SiC nanocomposite film

    Institute of Scientific and Technical Information of China (English)

    NIU Zhao-xia; CAO Fa-he; WANG Wei; ZHANG Zhao; ZHANG Jian-qing; CAO Chu-nan

    2007-01-01

    The point of zero charge(PZC) of SiC nanoparticles was determined by means of standard potentiometric titration method, while the influences of the main technological parameters on the microstructure of electrodeposited Ni-SiC composite film were studied and optimized. The results show that high bath pH value favors SiC nanoparticles negatively charged and high bath temperature promotes them positively charged. Under the experimental conditions, sodium dodecyl-glycol is proven to be an effective surface modification anionic surfactant for SiC nanoparticles. The results also show that the optimized Ni-SiC composite film is composed of the nanoparticles with the average grain size in the nanometer range (100 nm), and SiC nanoparticles disperse into the nickel matrix uniformly.

  5. Preparation and multicolored fluorescent properties of CdTe quantum dots/polymethylmethacrylate composite films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanni; Liu, Jianjun, E-mail: jjliu717@aliyun.com; Yu, Yingchun; Zuo, Shengli

    2015-10-25

    A new simple route was presented for the preparation of stable fluorescent CdTe/polymethylmethacrylate (CdTe/PMMA) composite films by using hydrophilic thioglycolic acid capped CdTe quantum dots (TGA-CdTe QDs) and polymethylmethacrylate (PMMA) as raw materials. The TGA-CdTe QDs were firstly exchanged with n-dodecanethiol (DDT) to become hydrophobic DDT-CdTe QDs via a ligand exchange strategy, and then incorporated into PMMA matrix to obtain fluorescent CdTe/PMMA composite films. The structure and optical properties of DDT-CdTe QDs and CdTe/PMMA composite films were investigated by XRD, IR, UV and PL techniques. The results indicated that the obtained DDT-CdTe QDs well preserved the intrinsic structure and the maximum emission wavelength of the initial water-soluble QDs and the resulting 6.10 wt% CdTe/PMMA composite film exhibited significantly enhanced PL intensity. Furthermore, the multicolored composite films with green, yellow-green, yellow and orange light emissions were well tuned by incorporating the CdTe QDs of various maximum emission wavelengths. The TEM image demonstrated that the CdTe QDs were well-dispersed in the PMMA matrix without aggregation. Superior photostability of QDs in the composite film was confirmed by fluorescence lifetime measurement. Thermo-gravimetric analysis of CdTe/PMMA composite films showed no obvious enhancement of thermal stability compared with pure PMMA. - Highlights: • Ligand-exchange strategy was used to render CdTe QDs oil-soluble. • CdTe QDs were incorporated into PMMA matrix to fabricate fluorescent films. • The resulting 6.10 wt% CdTe/PMMA film exhibited significantly enhanced PL intensity. • Fluorescent colors of films were tuned by varying the λ{sub em} of incorporated CdTe QDs.

  6. Preparation and multicolored fluorescent properties of CdTe quantum dots/polymethylmethacrylate composite films

    International Nuclear Information System (INIS)

    A new simple route was presented for the preparation of stable fluorescent CdTe/polymethylmethacrylate (CdTe/PMMA) composite films by using hydrophilic thioglycolic acid capped CdTe quantum dots (TGA-CdTe QDs) and polymethylmethacrylate (PMMA) as raw materials. The TGA-CdTe QDs were firstly exchanged with n-dodecanethiol (DDT) to become hydrophobic DDT-CdTe QDs via a ligand exchange strategy, and then incorporated into PMMA matrix to obtain fluorescent CdTe/PMMA composite films. The structure and optical properties of DDT-CdTe QDs and CdTe/PMMA composite films were investigated by XRD, IR, UV and PL techniques. The results indicated that the obtained DDT-CdTe QDs well preserved the intrinsic structure and the maximum emission wavelength of the initial water-soluble QDs and the resulting 6.10 wt% CdTe/PMMA composite film exhibited significantly enhanced PL intensity. Furthermore, the multicolored composite films with green, yellow-green, yellow and orange light emissions were well tuned by incorporating the CdTe QDs of various maximum emission wavelengths. The TEM image demonstrated that the CdTe QDs were well-dispersed in the PMMA matrix without aggregation. Superior photostability of QDs in the composite film was confirmed by fluorescence lifetime measurement. Thermo-gravimetric analysis of CdTe/PMMA composite films showed no obvious enhancement of thermal stability compared with pure PMMA. - Highlights: • Ligand-exchange strategy was used to render CdTe QDs oil-soluble. • CdTe QDs were incorporated into PMMA matrix to fabricate fluorescent films. • The resulting 6.10 wt% CdTe/PMMA film exhibited significantly enhanced PL intensity. • Fluorescent colors of films were tuned by varying the λem of incorporated CdTe QDs

  7. Deposition of Cl-doped CdTe polycrystalline films by close-spaced sublimation

    International Nuclear Information System (INIS)

    The effects of Cl-doping on the CdTe layers by the close-spaced sublimation (CSS) deposition were investigated. Cl-doped CdTe polycrystalline films were deposited on graphite substrates by CSS method using a mixture of CdTe and CdCl2 powder as a source. In X-ray diffraction (XRD) patterns of the obtained films with various deposition times, many diffraction peaks other than CdTe peaks were observed in the deposition times lower than 10 min. These diffraction peaks were probably due to the formation of chlorides of Cd, Te and C, such as CdCl2, TeCl4, Te3Cl2 and C10Cl8. X-ray fluorescence (XRF) and secondary ion mass spectrometry (SIMS) analyses revealed that a large amount of chlorine was contained in the films with the deposition times lower than 10 min, and that Cl concentration decreased with increasing the deposition time above 3 min. These results indicate that the films containing the chlorides of Cd, Te and C in addition to CdTe are formed in the initial stage of the CSS deposition using a mixture of CdTe and CdCl2 powder as a source. Cross-sectional images revealed that the grain size was decreased by the effect of Cl-doping. Furthermore, current-voltage (I -V) characteristics of the CdTe/graphite structures were measured, and it was found that the resistivity of the Cl-doped CdTe layer was much higher than that of the undoped CdTe layer. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. The prospects of CdTe thin films as solar control coatings

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, P.J.; Sivaramakrishnan, V. (Thin Film Lab., Dept. of Physics, Indian Inst. of Tech., Madras (India))

    1991-07-15

    Solar control coating refers to solar radiation filters applied on glazings of buildings in tropical countries. CdTe thin films were studied in this regard for use as an effective solar control coating. The films were characterized with respect to the film parameters such as film thickness, substrate temperature and deposition rate. On calculating the solar control parameters of various films, it was observed that the solar control parameters of the films depend on the above film parameters. CdTe films were found to be a better solar control coating than the commercial metallic coatings and exhibit comparable characteristics with Cu{sub x}S and PbS films. (orig.).

  9. First principles study of Bi dopen CdTe thin film solar cells: electronic and optical properties

    OpenAIRE

    Seminóvski Pérez, Yohanna; Palacios Clemente, Pablo; Wahnón Benarroch, Perla

    2011-01-01

    Nowadays, efficiency improvement of solar cells is one of the most important issues in photovoltaic systems and CdTe is one of the most promising thin film photovoltaic materials we can found. CdTe reported efficiencies in solar energy conversion have been as good as that found in polycrystalline Si thin film cell [1], besides CdTe can be easily produced at industrial scale.

  10. CdTe thin film solar cells with reduced CdS film thickness

    International Nuclear Information System (INIS)

    A study was performed to reduce the CdS film thickness in CdTe thin film solar cells to minimize losses in quantum efficiency. Using close space sublimation deposition for CdS and CdTe a maximum efficiency of ∼ 9.5% was obtained with the standard CdS film thickness of ∼ 160 nm. Reduction of the film CdS thickness to less than 100 nm leads to poor cell performance with ∼ 5% efficiency, mainly due to a lower open circuit voltage. An alternative approach has been tested to reduce the CdS film thickness (∼ 80 nm) by depositing a CdS double layer. The first CdS layer was deposited at high substrate temperature in the range of 520-540 deg. C and the second CdS layer was deposited at low substrate temperature of ∼ 250 deg. C. The cell prepared using a CdS double layer show better performance with cell efficiency over 10%. Quantum efficiency measurement confirmed that the improvement in the device performance is due to the reduction in CdS film thickness. The effect of double layer structure on cell performance is also observed with chemical bath deposited CdS using fluorine doped SnO2 as substrate.

  11. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    International Nuclear Information System (INIS)

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  12. Effects of ultrasonic field in pulse electrodeposition of NiFe film on Cu substrate

    Energy Technology Data Exchange (ETDEWEB)

    Balachandran, R. [Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100, Cyberjaya (Malaysia); Yow, H.K. [Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100, Cyberjaya (Malaysia)], E-mail: hkyow@mmu.edu.my; Ong, B.H. [Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100, Cyberjaya (Malaysia); Manickam, R. [Electronics Faculty, Tyndale Education Group Pte Ltd., 188942 (Singapore); Saaminathan, V. [School of Material Science and Engineering, Nanyang Technological University, 639798 (Singapore); Tan, K.B. [Department of Chemistry, Universiti Putra Malaysia, Serdang, 43400 (Malaysia)

    2009-07-29

    NiFe film was pulse electrodeposited on conductive Cu substrate under galvanostatic mode in the presence of an ultrasonic field. The NiFe film electrodeposited was subjected to structural and surface analyses by X-ray diffraction, energy dispersive X-ray spectroscopy, surface profiling and scanning electron microscopy, respectively. The results show that the ultrasonic field has significantly improved the surface roughness, reduced the spherical grain size in the range from 490-575 nm to 90-150 nm, and increased the Ni content from 76.08% to 79.74% in the NiFe film electrodeposited.

  13. Electrodeposition of Pyrite Thin Films for Solar Cell

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Formation of pyrite (FeS2) films through electrodeposition from aqueous solutions which contain different source materials has been investigated. Na2S2O3.5H2O is used as sulfur source material, FeSO4.7H2O, FeCl2.4H2O and FeCl3.6H2O are used as iron source materials respectively. The samples are annealed in N2 atmosphere at 400℃ and 500℃ respectively. From XRD (X-ray diffraction) patterns of the films, it is found that there are peaks of FeS2, FeS and Fe7S8 in all films, but there are sharp and more peaks characterizing FeS2 in the film from Na2S2O3 +FeSO4 than other films, and 400℃ is the more suitable temperature than 500℃ for annealing the samples in N2 atmosphere. In addition, one solution can be used repeatedly.

  14. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    OpenAIRE

    Zulkarnain Zainal; Mohd Norizam Md Daud; Azmi Zakaria; Mohd Sabri Mohd Ghazali; Atefeh Jafari; Wan Rafizah Wan Abdullah

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the ...

  15. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  16. Studies of recrystallization of CdTe thin films after CdCl{sub 2} treatment

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Al-Jassim, M.M.; Abulfotuh, F.A.; Levi, D.H.; Dippo, P.C.; Dhere, R.G.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States)

    1997-12-31

    CdTe thin films deposited by physical vapor deposition (PVD) and close-spaced sublimation (CSS) have been treated with CdCl{sub 2} at 350 and 400 C. Atomic force microscopy (AFM) analysis showed that the films started recrystallizing during the 350 C CdCl{sub 2} treatment. These results were confirmed by the presence of two lattice parameters, detected in X-ray diffraction (XRD) analysis. The PVD films treated at 400 C were completely recrystallized and grain growth was observed. The formation of Cd(S{sub 1{minus}x}Te{sub x}) alloy in these films was evidenced by the appearance of extra peaks close to the CdTe peaks in the diffraction patterns. No major changes were observed in the structural properties of CSS CdTe films treated at the same conditions. It was concluded that the effect of the CdCl{sub 2} treatment in the CdTe films is to promote recrystallization and grain growth, but only if enough lattice-strain energy is available (as is the case for PVD films). Time-resolved photoluminescence (TRPL) analysis showed, for PVD and CSS films, an increase in minority-carrier lifetime with the treatment, mainly at 400 C, probably due to elimination of deep levels within the band gap.

  17. Cyclic Electrodeposition of Yb-Bi Thin Films

    Institute of Scientific and Technical Information of China (English)

    李高仁; 柯琴芳; 童叶翔; 刘冠昆

    2004-01-01

    Deposition of Yb-Bi thin films was carried out from a nonaqueous solution by using cyclic electrodepositon.During electrodeposition the substrate potential was continuously cycled between two potentials.The effects of several factors including the potential of deposition,time of deposition and sweep rate on the Yb content in the thin films and surface morphology were studied.Experimental results indicate that the amorphous Yb-Bi thin films containing Yb 21.04%~36.36%(mass fraction)can be prepared in 0.10 mol·L-1 YbCl3+0.10 mol*L-1 Bi(NO3)3+0.10 mol·L-1 LiCl+DMSO by controlling deposition conditions of the system.They are black,uniform,metallic luster and adhered firmly to the copper substrates.The films were characterized by X-ray energy dispersive analysis(EDS),scanning electron microcoscope(SEM)and X-ray diffraction(XRD).

  18. Electrodeposition and Characterization of ZnO Thin Films

    Institute of Scientific and Technical Information of China (English)

    HUANG Yan-wei; YAO Ning; ZHANG bing-lin

    2007-01-01

    Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3)2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph(SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared ZnO films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2×102 cd/m2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor.

  19. Magnetic properties of electrodeposited Co-W thin films

    Energy Technology Data Exchange (ETDEWEB)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.

    1987-09-01

    Thin films of Co-W, 300--500 A thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a vibrating sample magnetometer. The magnetic properties of the films are strongly related to their microstructure. The nonmagnetic alloying element (W) affects the saturation magnetization via the dilution mechanism. The in-plane coercivity, which increases with increasing content of the hexagonal phase and with decreasing degree of (0001)h texture, is in the range of 100--600 Oe for the crystalline deposits and decreases to a few oersteds for amorphous deposits. The in-plane squareness ratio increases with the fcc or amorphous phase content and with decreasing degree of (0001)h texture. The magnetic measurements suggest that films that appeared amorphous according to their electron diffraction patterns are actually microcrystalline or at least partially crystallized.

  20. Facile method to prepare CdS nanostructure based on the CdTe films

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • CdS nanostructure is directly fabricated on CdTe film only by heating treatment under H2S/N2 mixed atmosphere at a relatively low temperature (450 °C) with gold layer as the intermediate. • Nanostructure of CdS layer, varying from nanowires to nanosheets, may be controlled by the thickness of gold film. • The change of morphology adjusts its luminescence properties. - Abstract: Nanostructured cadmium sulfide (CdS) plays critical roles in electronics and optoelectronics. In this paper, we report a method to fabricate CdS nanostructure directly on CdTe film, via a thermal annealing method in H2S/N2 mixed gas flow at a relatively low temperature (450 °C). The microstructure and optical properties of CdS nanostructure are investigated by X-ray diffraction, transmission electron microscopy, Raman, and photoluminescence. The morphology of CdS nanostructure, evolving from nanowires to nanosheets, can be controlled by the thickness of Au film deposited on the CdTe film. And CdS nanostructures are single crystalline with the hexagonal wurtzite structure. Raman spectroscopy under varying the excitation wavelengths confirm that synthesized CdS-CdTe films contain two layers, i.e., CdS nanostructure (top) and CdTe layer (bottom). The change of morphology modifies its luminescence properties. Obviously, through simply thermal annealing in H2S/N2 mixed gas, fabricating CdS nanostructure on CdTe film can open up the new possibility for obtaining high efficient CdTe solar cell

  1. Facile method to prepare CdS nanostructure based on the CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ligang; Chen, Yuehui; Wei, Zelu; Cai, Hongling; Zhang, Fengming; Wu, Xiaoshan, E-mail: xswu@nju.edu.cn

    2015-09-15

    Graphical abstract: - Highlights: • CdS nanostructure is directly fabricated on CdTe film only by heating treatment under H{sub 2}S/N{sub 2} mixed atmosphere at a relatively low temperature (450 °C) with gold layer as the intermediate. • Nanostructure of CdS layer, varying from nanowires to nanosheets, may be controlled by the thickness of gold film. • The change of morphology adjusts its luminescence properties. - Abstract: Nanostructured cadmium sulfide (CdS) plays critical roles in electronics and optoelectronics. In this paper, we report a method to fabricate CdS nanostructure directly on CdTe film, via a thermal annealing method in H{sub 2}S/N{sub 2} mixed gas flow at a relatively low temperature (450 °C). The microstructure and optical properties of CdS nanostructure are investigated by X-ray diffraction, transmission electron microscopy, Raman, and photoluminescence. The morphology of CdS nanostructure, evolving from nanowires to nanosheets, can be controlled by the thickness of Au film deposited on the CdTe film. And CdS nanostructures are single crystalline with the hexagonal wurtzite structure. Raman spectroscopy under varying the excitation wavelengths confirm that synthesized CdS-CdTe films contain two layers, i.e., CdS nanostructure (top) and CdTe layer (bottom). The change of morphology modifies its luminescence properties. Obviously, through simply thermal annealing in H{sub 2}S/N{sub 2} mixed gas, fabricating CdS nanostructure on CdTe film can open up the new possibility for obtaining high efficient CdTe solar cell.

  2. Formation and Properties of Polycrystalline p-Type High-Conductivity CdTe Films by Coevaporation of CdTe and Te

    Science.gov (United States)

    Hayashi, Toshiya; Hayashi, Hiroaki; Fukaya, Mitsuru; Ema, Yoshinori

    1991-10-01

    Polycrystalline p-type high-dark-conductivity CdTe films have been prepared by coevaporation of CdTe and Te. The structural and electrical properties were investigated. The dark conductivity of the films at 300 K ranged from 6.32× 10-8 to 3.41 S cm-1. The film structure was of the zincblende type with a preferential orientation of the (111) planes parallel to the substrate. The crystallinity was rather good. From the measurements of the carrier concentration versus ambient temperature characteristics, it was found that the high-conductivity p-type conduction of the films was due to the formation of Cd vacancies, acceptors resulting from the coevaporation of CdTe and Te. It is shown that the high-conductivity films obtained are suitable for p-CdTe/n-CdS solar cells.

  3. Research on oxidation resistance of Al2O3 thin film prepared by electrodeposition-pyrolysis

    Directory of Open Access Journals (Sweden)

    Jing MA

    2015-08-01

    Full Text Available Al2O3 thin films are deposited on the surface of 304 stainless steel by electrodeposition-pyrolysis, and the effects of electrolyte concentration and electro-deposition voltage on the oxidation behavior of Al2O3 thin film at 900 ℃ are investigated. Macroscopic surface morphologies, XRD analysis and oxidation kinetics curves show that the electrodeposition-Al2O3 thin films reduce the partial pressure of oxygen at the initial oxidation stage on the substrate surface, promoting the selective oxidation, thus the oxidation resistance of 304 stainless steel is significantly improved. The high temperature oxidation resistance of Al2O3 film prepared under voltage of 25 V and aluminum nitrate alcohol solution of 0.10 mol/L is the best.

  4. Simultaneous electrodeposition of Ag-In-Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aouaj, M.A.; Bihri, H.; Abd-Lefdil, M. [Laboratoire de Physique des Materiaux, Faculte des Sciences, Rabat (Morocco); Hajji, F.; Cherkaoui, F. [Laboratoire de corrosion et d' electrochimie, Faculte des Sciences, Rabat (Morocco); Diaz, R.; Rueda, F. [Univ. Autonoma de Madrid, Madrid (Spain). Dept. de fisica aplicada

    2006-07-01

    This paper explored the use of ternary chalcopyrite compounds as absorber materials in solar cells and optoelectronic devices. The preparation of ternary compounds is complicated due to different values of equilibrium potentials for each constituent. This paper presented a one step electrodeposition process that is used to prepare Ag-In-Se thin films on molybdenum supported on glass substrates. For the copper (Cu) based chalcopyrite, the optical band gap E{sub g} can be varied from 1 eV to 2.7 eV. For the silver (Ag) based materials, the optical band gap can be varied from 1.2 eV to 3.1 eV. Cu indium (In) deselenide (Se{sub 2}) and CuSe{sub 2} solar cells have achieved a single junction efficiency of 18.8 per cent comparable to that of the best multicrystalline silicon devices which have an efficiency of 19.8 per cent. As such, they are a material alternative to crystalline-silicon technologies. Other compounds such as CuIn{sub 3} tellurium (Te{sub 5}) with a band gap in 1.83 to 1.93 eV range and high resistivity of about 107 cm have been prepared in order to synthesize new semiconductor detectors of {gamma} ray radiation. AgInSe{sub 2} ternary compound is also a promising absorber semiconductor for solar cells and Schottky barrier diodes since its gap value is about 1.2 eV. It has been produced by co-evaporation; flash evaporation of ingots grown by sealed evacuated quartz ampoules; pulsed laser deposition; the horizontal Bridgman method; and, the electrodeposition method. Following recent studies on Cu compounds such as CuIn{sub 3}Se{sub 5} and CuIn{sub 3}Te{sub 5}, this study elaborated AgInSe{sub 2} and AgIn{sub 3}Se{sub 5} using the electrodeposition process which is a low-cost, high deposition speed process that does not require the use of vacuum. It was concluded that the composition and morphology of the films are a function of the growth conditions, and that heat treatment under nitrogen leads to silver indium deselenide. 13 refs.

  5. Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

    Indian Academy of Sciences (India)

    Ziaul Raza Khan; M Zulfequar; Mohd Shahid Khan

    2012-04-01

    Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10-5 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV–VIS–NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1.47–1.50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.

  6. Electrodeposited nanoporous ZnO films exhibiting enhanced performance in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Electrodeposition of nanoporous ZnO films and their applications to dye-sensitized solar cells (DSSCs) were investigated in the aim of developing cost-effective alternative synthetic methods and improving the ZnO-based DSSCs performance. ZnO films were grown by cathodic electrodeposition from an aqueous zinc nitrate solution containing polyvinylpyrrolidone (PVP) surfactant. PVP concentration had strong effects on the grain sizes and surface morphologies of ZnO films. Nanoporous ZnO film with grain size of 20-40 nm was obtained in the electrolyte containing 4 g/L PVP. The X-ray diffraction pattern showed that nanoporous ZnO films had a hexagonal wurtzite structure. Optical properties of such films were studied and the results indicated that the films had a band gap of 3.3 eV. DSSCs were fabricated from nanoporous ZnO films and the cell performance could be greatly improved with the increase of ZnO film thickness. The highest solar-to-electric energy conversion efficiency of 5.08% was obtained by using the electrodeposited double-layer ZnO films (8 μm thick nanoporous ZnO films on a 200 nm thick compact nanocrystalline ZnO film). The performance of such cell surpassed levels attained in previous studies on ZnO film-based DSSCs and was among the highest for DSSCs containing electrodeposited film components

  7. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    International Nuclear Information System (INIS)

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature

  8. Optical Polarization Properties of Metal Nanowire Array Film Synthesized by Electrodeposition Technology

    Institute of Scientific and Technical Information of China (English)

    梁燕萍; 史启祯; 吴振森; 王尧宇; 高胜利

    2005-01-01

    Metal nanowire array films were prepared by electrodepositing Cu, Ag, Ni, Co and Cu-Ag on porous anodic alumina film. Optical transmittance of both the porous anodic alumina film and metal nanowire array film was measured in the wavelength range of 400---2600 nm under an obliquely incident light. The experimental results show that metal nanowire array films exhibit a prominent polarization function. It was found that optical polarization properties can be improved by choosing suitable kinds of electrodepositing metal, controlling the shape and length of nanowire, and changing the incident angle.

  9. Preparation and properties of evaporated CdTe films compared with single crystal CdTe

    Science.gov (United States)

    Bube, R. H.

    The hot wall vacuum deposition system is discussed and is is good temperature tracking between the furnace core and the CdTe source itself are indicated. Homojunction cells prepared by HWVE deposition of n-CdTe on p-CdTe substrates show no significant change in dark or light properties after open circuit storage for the next 9 months. CdTe single crystal boules were grown with P, As and Cs impurity. For P impurity it appears that the segregation coefficient is close to unity, that the value of hole density is controlled by the P, and that growth with excess Cd gives slightly higher values of hole density than growth with excess Te. CdTe:As crystals appear similar to CdTe:P crystals.

  10. Performance of supercapacitor with electrodeposited ruthenium oxide film electrodes—effect of film thickness

    Science.gov (United States)

    Park, Bong-Ok; Lokhande, C. D.; Park, Hyung-Sang; Jung, Kwang-Deog; Joo, Oh-Shim

    Thin-film ruthenium oxide electrodes are prepared by cathodic electrodeposition on a titanium substrate. Different deposition periods are used to obtain different film thicknesses. The electrodes are used to form a supercapacitor with a 0.5 M H 2SO 4 electrolyte. The specific capacitance and charge-discharge periods are found to be dependent on the electrode thickness. A maximum specific capacitance of 788 F g -1 is achieved with an electrode thickness of 0.0014 g cm -2. These results are explained by considering the morphological changes that take place with increasing film thickness.

  11. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  12. Methods for improving n-type photoconductivity of electrodeposited Cu2O thin films

    Science.gov (United States)

    Kalubowila, K. D. R. N.; Gunawardhana, L. K. A. D. D. S.; Wijesundera, R. P.; Siripala, W.

    2014-07-01

    Electrodeposition technique is very useful for depositing n-type Cu2O thin films on various substrates. However, most of the reported n-type Cu2O thin film electrodes exhibit not only n-type photoactivity but also p-type photoactivity in photoelectrochemical cells. In this study, current-voltage characteristics and zero bias spectral response measurements were employed to investigate the possibilities to remove/minimize this unwanted p-type behaviour of n-type Cu2O thin films electrodeposited on Ti substrate. For this, prior deposition of Cu thin films on Ti substrate, low temperature annealing of Cu2O films in air and optimization of deposition bath pH were investigated. Growth of a very thin Cu film improved the n-type photosignal significantly and reduced the p-type photoresponse of the films. Films electrodeposited using an acetate bath of pH 6.1 produced only the n-type photoresponse. Low temperature annealing of Cu2O films in air improved the n-type photoresponse and it was found that annealing at 100 °C for 24 h produces the best result. These methods will be very useful to obtain electrodeposited Cu2O thin film with improved n-type photoactivity suitable for applications in thin film solar cells and other devices.

  13. Characteristics of CdTe films and CdTe/CdS solar cells fabricated by photostimulated sublimation

    International Nuclear Information System (INIS)

    Full text : The effect of illumination during the close-spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells was investigated. Data on comparative study by using X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), absorption spectra and conductivity-temperature measurements of CdTe films prepared by CSS method in a dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate of CdTe films under illumination is higher than that for films prepared without illumination. Moreover, the polycrystalline CdTe films of the cubic structure grown by CSSI technology were characterized with larger the grain size as compared to that for films prepared by CSSD

  14. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Shamara [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Vatavu, Sergiu, E-mail: svatavu@usm.md [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Evani, Vamsi; Khan, Md; Bakhshi, Sara; Palekis, Vasilios [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Rotaru, Corneliu [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Ferekides, Chris [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States)

    2015-05-01

    A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects. - Highlights: • Photoluminescense (PL) of CdTe thin films is present in the 0.8-1.6 eV spectral region. • High intensity excitonic peaks are among the main radiative paths. • Radiative transitions at 1.36x eV are assisted by dislocations caused levels. • Extremal Cd/Te overpressure ratios enhance PL for 1.497 eV, 1.486 eV, 1.474 eV bands. • PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.

  15. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  16. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-04-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  17. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  18. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    International Nuclear Information System (INIS)

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV

  19. Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt); Afify, N. [Physics Department, Assiut University, Assiut (Egypt); El-Taher, A. [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt)

    2009-08-12

    Different thickness of cadmium telluride (CdTe) thin films was deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The XRD experiments showed that the films are polycrystalline and have a zinc-blende (cubic) structure. The microstructure parameters, crystallite size and microstrain were calculated. It is observed that the crystallite size increases and microstrain decreases with the increase in the film thickness. The fundamental optical parameters like band gap and extinction coefficient are calculated in the strong absorption region of transmittance and reflectance spectrum. The possible optical transition in these films is found to be allowed direct transition with energy gap increase from 1.481 to 1.533 eV with the increase in the film thickness. It was found that the optical band gap increases with the increase in thickness. The refractive indices have been evaluated in transparent region in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index can be extrapolated by Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that the refractive index, n increases on increasing the film thickness up to 671 nm and then the variation of n with higher thickness lie within the experimental errors.

  20. Electrodeposition of Manganese-Nickel Oxide Films on a Graphite Sheet for Electrochemical Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Hae-Min Lee

    2014-01-01

    Full Text Available Manganese-nickel (Mn-Ni oxide films were electrodeposited on a graphite sheet in a bath consisting of manganese acetate and nickel chloride, and the structural, morphological, and electrochemical properties of these films were investigated. The electrodeposited Mn-Ni oxide films had porous structures covered with nanofibers. The X-ray diffractometer pattern revealed the presence of separate manganese oxide (g-MnO2 and nickel oxide (NiO in the films. The electrodeposited Mn-Ni oxide electrode exhibited a specific capacitance of 424 F/g in Na2SO4 electrolyte. This electrode maintained 86% of its initial specific capacitance over 2000 cycles of the charge-discharge operation, showing good cycling stability.

  1. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

    Science.gov (United States)

    Okamoto, Tamotsu; Kitamoto, Shinji; Yamada, Akira; Konagai, Makoto

    2001-05-01

    The control of native defects in the CdTe thin film solar cells was investigated using a novel source for close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and the Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2% because of the extremely low shunt resistance. On the other hand, a conversion efficiency above 15% was obtained by using the Cd-rich source. Capacitance-voltage (C-V) characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed using the Cd-rich source.

  2. Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

    OpenAIRE

    Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

    2014-01-01

    The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is ...

  3. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  4. Magnetic vortex state and multi-domain pattern in electrodeposited hemispherical nanogranular nickel films

    International Nuclear Information System (INIS)

    Magnetic states of nickel nanogranular films were studied in two distinct structures of individual and agglomerated granules electrodeposited on n-type Si(1 1 1) surface from a modified Watts bath at a low pH of 2. Magnetic force microscopy and micromagnetic simulations revealed three-dimensional out-of-plane magnetic vortex states in stand-alone hemispherical granules and their arrays, and multi-domain patterns in large agglomerates and integrated films. Once the granules coalesce into small chains or clusters, the coercivity values increased due to the reduction of inter-granular spacing and strengthening of the magnetostatic interaction. Further growth leads to the formation of a continuous granulated film which strongly affected the coercivity and remanence. This was characterized by the domain wall nucleation and propagation leading to a stripe domain pattern. Magnetoresistance measurements as a function of external magnetic field are indicative of anisotropic magnetoresistance (AMR) for the continuous films electrodeposited on Si substrate. - Highlights: • Magnetic states of electrodeposited nickel in isolated spherical and agglomerated nanogranules, and a continuous film. • Preferential magnetization reversal mechanism in isolated granules is vortex state. • Micromagnetic simulations confirm the three-dimensional vortex. • Transition between the vortex state and multi-domain magnetic pattern causes a significant decrease in the coercive force. • Continuous nickel films electrodeposited on silicon substrate exhibit AMR whose magnitude increases with the film thickness

  5. Magnetic vortex state and multi-domain pattern in electrodeposited hemispherical nanogranular nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Samardak, Alexander; Sukovatitsina, Ekaterina; Ognev, Alexey; Stebliy, Maksim; Davydenko, Alexander; Chebotkevich, Ludmila [Laboratory of Thin Film Technologies, School of Natural Sciences, Far Eastern Federal University, Vladivostok (Russian Federation); Keun Kim, Young [Department of Materials Science and Engineering, Korea University, Seoul (Korea, Republic of); Nasirpouri, Forough [Department of Physics, University of Tabriz, Tabriz (Iran, Islamic Republic of); Janjan, Seyed-Mehdi [Faculty of Materials Engineering, Sahand University of Technology, Tabriz 51335-1996 (Iran, Islamic Republic of); Nasirpouri, Farzad, E-mail: nasirpouri@sut.ac.ir [Faculty of Materials Engineering, Sahand University of Technology, Tabriz 51335-1996 (Iran, Islamic Republic of)

    2014-12-15

    Magnetic states of nickel nanogranular films were studied in two distinct structures of individual and agglomerated granules electrodeposited on n-type Si(1 1 1) surface from a modified Watts bath at a low pH of 2. Magnetic force microscopy and micromagnetic simulations revealed three-dimensional out-of-plane magnetic vortex states in stand-alone hemispherical granules and their arrays, and multi-domain patterns in large agglomerates and integrated films. Once the granules coalesce into small chains or clusters, the coercivity values increased due to the reduction of inter-granular spacing and strengthening of the magnetostatic interaction. Further growth leads to the formation of a continuous granulated film which strongly affected the coercivity and remanence. This was characterized by the domain wall nucleation and propagation leading to a stripe domain pattern. Magnetoresistance measurements as a function of external magnetic field are indicative of anisotropic magnetoresistance (AMR) for the continuous films electrodeposited on Si substrate. - Highlights: • Magnetic states of electrodeposited nickel in isolated spherical and agglomerated nanogranules, and a continuous film. • Preferential magnetization reversal mechanism in isolated granules is vortex state. • Micromagnetic simulations confirm the three-dimensional vortex. • Transition between the vortex state and multi-domain magnetic pattern causes a significant decrease in the coercive force. • Continuous nickel films electrodeposited on silicon substrate exhibit AMR whose magnitude increases with the film thickness.

  6. CdTe detector use for PIXE characterization of TbCoFe thin films

    International Nuclear Information System (INIS)

    Peltier cooled CdTe detectors have good efficiency beyond the range of energies normally covered by Si(Li) detectors, the most common detectors in PIXE applications. An important advantage of CdTe detectors is the possibility of studying K X-rays lines instead the L X-rays lines in various cases since CdTe detectors present an energy efficiency plateau reaching 70 keV or more. The ITN CdTe useful energy range starts at K-Kα (3.312 keV) and goes up to 120 keV, just above the energy of the lowest γ-ray of the 19F(p, p'γ)19F reaction. In the new ITN HRHE-PIXE line, a CdTe detector is associated to a POLARIS microcalorimeter X-ray detector built by Vericold Technologies GmbH (an Oxford Instruments Group Company). The ITN POLARIS has a resolution of 15 eV at 1.486 keV (Al-Kα) and 24 eV at 10.550 keV (Pb-Lα1). In the present work, a TbCoFe thin film deposited on a Si substrate was analysed at the HRHE-PIXE system. The good efficiency of the CdTe detector at 45 keV (Tb-Kα), and the excellent resolution of POLARIS microcalorimeter at 6.403 keV (Fe-Kα), are presented and the new possibilities open to the IBA analysis of systems with traditionally overlapping X-rays and near mass elements are discussed.

  7. FeS2(pyrite)electrodeposition thin films and study of growth mechanism

    Institute of Scientific and Technical Information of China (English)

    DONG; Youzhong; ZHENG; Yufeng; ZHANG; Xiaogang; DUAN; He

    2005-01-01

    Ferrous sulfide (FeS) thin films were initially electrodeposited on indium-tin oxide (ITO) substrates in the aqueous solution containing iron, sulfur elements and then annealed in the sulfur atmosphere. Thereby, we successfully obtained the single-phased iron pyrite (FeS2) thin films with good quality. The experimental parameters for electrodeposition and the post-growth thermal-dynamical conditions have been calculated so that more details about the effect of thermal-dynamical conditions on the micromechanism concerned with the iron pyrite crystal growth as well as the properties of the samples have been discussed.

  8. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Guthrey, Harvey L. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Burst, James M. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Duenow, Joel N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Ahrenkiel, Richard K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, USA; Metzger, Wyatt K. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

    2016-09-09

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  9. Cathodoluminescence spectrum imaging analysis of CdTe thin-film bevels

    Science.gov (United States)

    Moseley, John; Al-Jassim, Mowafak M.; Guthrey, Harvey L.; Burst, James M.; Duenow, Joel N.; Ahrenkiel, Richard K.; Metzger, Wyatt K.

    2016-09-01

    We conducted T = 6 K cathodoluminescence (CL) spectrum imaging with a nanoscale electron beam on beveled surfaces of CdTe thin films at the critical stages of standard CdTe solar cell fabrication. We find that the through-thickness CL total intensity profiles are consistent with a reduction in grain-boundary recombination due to the CdCl2 treatment. The color-coded CL maps of the near-band-edge transitions indicate significant variations in the defect recombination activity at the micron and sub-micron scales within grains, from grain to grain, throughout the film depth, and between films with different processing histories. We estimated the grain-interior sulfur-alloying fraction in the interdiffused CdTe/CdS region of the CdCl2-treated films from a sample of 35 grains and found that it is not strongly correlated with CL intensity. A kinetic rate-equation model was used to simulate grain-boundary (GB) and grain-interior CL spectra. Simulations indicate that the large reduction in the exciton band intensity and relatively small decrease in the lower-energy band intensity at CdTe GBs or dislocations can be explained by an enhanced electron-hole non-radiative recombination rate at the deep GB or dislocation defects. Simulations also show that higher GB concentrations of donors and/or acceptors can increase the lower-energy band intensity, while slightly decreasing the exciton band intensity.

  10. Influence of Kilo-Electron Oxygen Ion Irradiation on Structural, Electrical and Optical Properties of CdTe Thin Films

    Science.gov (United States)

    Honey, Shehla; Thema, F. T.; Bhatti, M. T.; Ishaq, A.; Naseem, Shahzad; Maaza, M.

    2016-09-01

    In this paper, effect of oxygen (O+) ion irradiation on the properties of polycrystalline cubic structure CdTe thin films has been investigated. CdTe thin films were irradiated with O+ ions of energy 80keV at different fluence ranging from 1×1015 to 5×1016 ion/cm2 at room temperature. At 1×1015 ion/cm2 O+ ions fluence, the CdTe structure was maintained while XRD peaks of cubic phase were shifted toward lower angles. At 5×1016 ion/cm2 O+ ions fluence, cubic structure of CdTe thin films was transformed into hexagonal structure. In addition, electrical resistivity and optical bandgap were decreased with increasing O+ ion beam irradiation.

  11. Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

    International Nuclear Information System (INIS)

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

  12. Electrodeposition of Copper onto Polypyrrole Films: Application to Proton Reduction

    Science.gov (United States)

    Chikouche, Imene; Sahari, Ali; Zouaoui, Ahmed; Zegadi, Ameur

    2016-09-01

    In this paper, we have electrodeposited copper on polypyrrole surface. Results show that at high applied cathodic potential (>-1.8V), copper electrodeposition occurs with difficulties. The amount of electrodeposited copper is low (1.32%) and it is limited by the low polypyrrole conductivity. At this potential, poor conductivity is caused by its insulating state. However, at an applied cathodic potential of -1.2V, the polypyrrole exhibits a relatively high conductivity and copper particles are electrodeposited with large amounts (12.44%) on polypyrrole/silicon system. At high applied cathodic potential, the SEM images show clearly dispersed grains of copper, but polypyrrole surface is less occupied. At an applied cathodic potential of -1.2V, the SEM image shows that polypyrrole surface is homogenously more occupied with copper. After copper deposition, the Cu/PPy/Si system is used to catalyze the hydrogen reaction. It was found that, once the deposited copper is present with considerable amounts, the proton reduction occurs easily. As for the polypyrrole conductivity, it was found that electrodeposited copper onto PPy/Si surface affect the total conductivity.

  13. Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.

  14. Identification of critical stacking faults in thin-film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  15. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    International Nuclear Information System (INIS)

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, and oscillator energy (Eo) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 104 Ω cm was obtained for the CdTe:Cu (3 wt. %) film

  16. Electrodeposition and characterization of nano-crystalline antimony telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lensch-Falk, J.L.; Banga, D. [Sandia National Laboratories, Livermore, CA 94550 (United States); Hopkins, P.E. [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Robinson, D.B.; Stavila, V. [Sandia National Laboratories, Livermore, CA 94550 (United States); Sharma, P.A. [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Medlin, D.L., E-mail: dlmedli@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2012-07-31

    Electrodeposition is a promising low-cost method to fabricate nanostructured thermoelectric thin films such as Sb{sub 2}Te{sub 3}. However, electrodeposition of crystalline Sb{sub 2}Te{sub 3} without the need for additional processing and with good compositional control has presented a challenge. Here we report on the electrodeposition of crystalline Sb{sub 2}Te{sub 3} thin films at room temperature from a tartaric-nitric acid electrolyte using a pulsed, potentiostatic process. The effects of synthesis conditions on the resulting microstructure and compositional homogeneity are investigated using x-ray diffraction, electron diffraction, electron microscopy, and energy dispersive x-ray spectroscopy. The composition of the Sb-Te films was found to be dependent on the interval between pulses, a result that is likely due to the slow kinetics associated with Sb{sub 2}Te{sub 3} formation at the surface. We also observed a change in texture and microstructure with varied applied pulse duration: for short pulse durations a lamellar microstructure with a {l_brace}000 Script-Small-L {r_brace} texture forms, whereas for longer pulse durations a more equiaxed and randomly oriented microstructure forms. The thermal conductivities of the pulsed electrodeposited films are surprisingly low at less than 2 W/K{center_dot}m and are found to systematically decrease with reduced pulse time. - Highlights: Black-Right-Pointing-Pointer We investigate the growth, microstructure, and thermal conductivity of Sb{sub 2}Te{sub 3} films. Black-Right-Pointing-Pointer Pulsed electrodeposition is used to grow crystalline Sb{sub 2}Te{sub 3} films. Black-Right-Pointing-Pointer Film composition and microstructure depend on the growth conditions. Black-Right-Pointing-Pointer Kinetics and thermodynamics are used to explain these observations. Black-Right-Pointing-Pointer The low thermal conductivities observed are correlated to microstructure and texture.

  17. Pulsed electrodeposition of Cu2ZnSnS4 thin films: Effect of pulse potentials

    Science.gov (United States)

    Gurav, K. V.; Kim, Y. K.; Shin, S. W.; Suryawanshi, M. P.; Tarwal, N. L.; Ghorpade, U. V.; Pawar, S. M.; Vanalakar, S. A.; Kim, I. Y.; Yun, J. H.; Patil, P. S.; Kim, J. H.

    2015-04-01

    Cu2ZnSnS4 (CZTS) thin films are electrodeposited on Mo substrate using pulsed electrodeposition (PED) at different pulse potentials. The pulse potential (V1) is varied from 0 V/SCE to -0.9 V/SCE and V2 fixed at -1.1 V/SCE. The effects of pulse potentials on the properties of CZTS thin films are investigated. Formation of secondary phases along with CZTS phase is evident for films deposited at low pulse potentials. The secondary phases seem to be reduced with increase in pulse potentials. The morphology of CZTS films is systematically evolved from agglomerated grains to compact one with increase in pulse potentials. The film deposited using optimized pulse potentials (V1 - -0.9 V/SCE and V2 - -1.1 V/SCE) exhibit prominent CZTS phase with nearly stoichiometric composition and has compact morphology with optical band gap energy of 1.46 eV.

  18. Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Bi2-xSbxTe3 thermoelectric films were electrochemically deposited from the solution containing Bi3+, HTeO2+and SbO+.ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi2-xSbxTe3 films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi2-xSbxTe3 films were measured. The results showed that the composition of the film electrodeposited at -0.5 V is Bi0.5Sb1.5Te3 with the largest Seebeck coefficient of 213 μV·K-1.

  19. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    Science.gov (United States)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  20. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    International Nuclear Information System (INIS)

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb2Te3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb2Te3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  1. Modeling the defect distribution and degradation of CdTe ultrathin films

    Science.gov (United States)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  2. Effect of active treatments on photovoltaic characteristics of structures based on CdTe films

    International Nuclear Information System (INIS)

    Photoelectric characteristics of ITO/CdTe structures fabricated by the thermal evaporation in vacuum followed by their deposition in a quasi closed volume have been studied before and after treatments of various kinds. Some specimens were subjected to a 'chloride' treatment, the others were annealed in air. Afterward, the specimens were treated in hydrogen plasma, and they were covered with a thin diamond-like carbon film. The 'chloride' treatment of ITO/CdTe structures is shown to result in an increase of the diffusion length of charge carriers in the CdTe layer. The thermal annealing did not affect this parameter, but significantly enhanced the photosensitivity, which means a reduction of the surface recombination rate in the surface CdTe layer. For all considered ITO/CdTe structures obtained by the thermal evaporation in vacuum, the following treatment in hydrogen plasma and the deposition of thin diamondlike films brought about a substantial increase in the diffusion length of charge carriers in the CdTe layer. The ITO/CdTe structures obtained by the thermal vacuum evaporation and treated with hydrogen plasma demonstrated a significant enhancement of their spectral sensitivity in a wavelength range of 400-800 nm, whereas the same effect for structures subjected to the 'chloride' treatment was obtained after the sequential hydrogen plasma treatment and the diamond-like carbon film deposition.

  3. Preparation and Properties of CdTe Polycrystalline Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    ZHENG Huajing; ZHANG Jingquan; FENG Lianghuan; ZHENG Jiagui; CAI Wei; LI Bing; CAI Yaping

    2006-01-01

    The structure and characteristics of CdTe thin films are closely dependent on the whole deposition process in close-space sublimation (CSS). The physical mechanism of CSS was analyzed and the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The results indicate: the samples deposited at different pressures have a cubical structure of CdTe and the diffraction peaks of CdS and SnO2∶F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate temperature of 500 ℃ and a source temperature of 620 ℃, the polycrystalline thin films can be made, so the production of high-quality integrated cell with SnO2:F/CdS/CdTe/Au structure is hopeful.

  4. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    OpenAIRE

    F. de Moure-Flores; J. G. Quiñones-Galván; A. Guillén-Cervantes; Santoyo-Salazar, J.; A. Hernández-Hernández; Olvera, M. de la L.; M. Zapata-Torres; Meléndez-Lira, M.

    2012-01-01

    Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess ...

  5. Influence of CuxS back contact on CdTe thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Lei Zhi; Feng Lianghuan; Zeng Guanggen; Li Wei; Zhang Jingquan; Wu Lili; Wang Wenwu

    2013-01-01

    We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells.The characteristics of the films deposited on Si-substrate are studied by XRD.The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing,samples are in polycrystalline phases with increasing temperature.The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells.When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best.The energy conversion efficiency can be higher than 12.19%,the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

  6. Fabrication of solar cells based on polycrystalline CdTe thin films using an economical production. Energie

    Energy Technology Data Exchange (ETDEWEB)

    Tranchart, J.C.; Boucherez, P.

    1983-01-01

    Polycrystalline CdS and CdTe films were produced by serigraphy. High-quality CdS films were obtained, especially with CdCl as melting phase. In the field of CdTe films, further studies are required in order to improve the sintering process, the film porosity characteristics, and the electric resistivity which decides the serial conductivity of the n-CdS/p-CdTe structures. In the field of solar cells, quartz +In/sub 2/O/sub 3/+CdS+CdTe heterostructures with a photoelectric efficiency of 2.5% were obtained. This value is too low, even if the economic advantages of serigraphy are taken into account. Further studies should center on the sintering process for CdTe films.

  7. Challenges of sample preparation for cross sectional EBSD analysis of electrodeposited nickel films

    DEFF Research Database (Denmark)

    Alimadadi, Hossein; Pantleon, Karen

    2009-01-01

    . Different procedures for sample preparation including mechanical grinding and polishing, electropolishing and focused ion beam milling have been applied to a nickel film electrodeposited on top of an amorphous Ni-P layer on a Cu-substrate. Reliable EBSD analysis of the whole cross section can be obtained...

  8. Electrodeposition of bismuth telluride thermoelectric films from a nonaqueous electrolyte using ethylene glycol

    NARCIS (Netherlands)

    Nguyen, H.P.; Wu, M.; Su, J.; Vullers, R.J.M.; Vereecken, P.M.; Fransaer, J.

    2012-01-01

    Ethylene glycol was studied as an electrolyte for the electrodeposition of thermoelectric bismuth telluride films by cyclic voltammetry, rotating ring disk electrode and electrochemical quartz crystal microbalance (EQCM). The reduction of both Bi3+ and Te4+ ions proceeds in one step without the form

  9. Processing and characterization of large-grain thin-film CdTe

    International Nuclear Information System (INIS)

    Basic material studies addressing the growth and processing of CdTe have resulted in dense, defect-free as-grown CdTe films on 7059 glass with initial grain sizes of ∼0.2 μm. Innovations in postdeposition processing (no CdCl2) have resulted in films with >50 μm grain sizes. Scanning electron microscopy analyses confirm film density while concurrent cathodluminescence reveals a change in the recombination efficiency. Transmission electron microscopy analyses reveal that films grown below 300 degree C are defect-free, while films grown above 300 degree C contain defects. Photoluminescence lifetime measurements reveal a fivefold increase in lifetime following postdeposition processing of these films. These results were correlated with x-ray photoemission measurements of the Te 4d, Cd 4d, and valence band. This indicates that grain boundaries are the main factor limiting lifetimes. Based on these results, we have developed an understanding of the effects of oxygen and grain boundary oxides on postdeposition processing and enhanced grain growth

  10. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Effect of substrate temperature on photoconductivity in CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sarmah, K.C.; Das, H.L. (Dept. of Physics, Gauhati Univ., Assam (India))

    1991-03-20

    Thin films of highly pure (99.999%) CdTe grown by vacuum evaporation on glass substrates held at elevated temperatures have been found to be polycrystalline. Within the range from liquid nitrogen temperature to 425 K two distinct conductivity regions both in the dark and under illumination have been observed in all the films having different grain sizes. From lower temperatures to 285 K the conductivity is essentially temperature independent and above 285 K the potential barriers localized at grain boundaries limit the conductivity. (orig.).

  12. Surface plasmon effect in nanocrystalline copper/DLC composite films by electrodeposition technique

    Indian Academy of Sciences (India)

    S Hussain; A K Pal

    2006-11-01

    Composite films of nanocrystalline copper embedded in DLC matrix prepared by electrodeposition technique were studied for their optical properties. Particle size and metal volume fractions were tailored by varying the amount of copper containing salt in the electrolyte. Blue-shift of the surface plasmon resonance peak in the absorbance spectra of the films was observed with the reduction in size and volume fraction of metal particles. Mie theory was found to describe the experimental spectra quite well.

  13. Electrodeposition of black chromium thin films from trivalent chromium-ionic liquid solution

    OpenAIRE

    Eugénio, S.; Vilar, Rui; C. M. Rangel; Baskaran, I.

    2009-01-01

    In the present study, black chromium thin films were electrodeposited from a solution of 1-butyl-3- methylimidazolium tetrafluoroborate ([BMIm][BF4] ionic liquid containing trivalent chromium (Cr(III)). Homogeneous and well adherent coatings have been obtained on nickel, copper and stainless steel substrates. The nucleation and growth of the films were investigated by cyclic voltammetry and current-density/time transient techniques. SEM/EDS, XPS and XRD were used to study the morphology, chem...

  14. Frictional and wear properties of cobalt/multiwalled carbon nanotube composite films formed by electrodeposition

    OpenAIRE

    Arai, Susumu; Miyagawa, Kazuaki

    2013-01-01

    Carbon nanotubes (CNTs) have solid lubricity due to their unique structure, and as such, CNT composites are also expected to exhibit superior tribological properties. In this study, Co/CNT composite films were fabricated using a composite electrodeposition technique, and their tribological properties were investigated. Three different sizes of multiwalled carbon nanotubes (MWCNTs) were used as the CNTs in this study. The microstructures of the composite films were examined using scanning elec...

  15. Thin-film CdTe photovoltaic cells by laser deposition and rf sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R.G.; Bhat, A.; Tabory, C.; Shao, M.; Li, Y.; Savage, M.E.; Tsien, L. (Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606 (United States))

    1992-12-01

    Laser-driven physical vapor deposition (LDPVD) and radio-frequency (rf) sputtering have been used to fabricate thin-film solar cells on SnO[sub 2]-coated glass substrates. The laser-ablation process readily permits the use of several target materials in the same vacuum chamber and complete solar cell structures have been fabricated on SnO[sub 2]-coated glass using LDPVD for the CdS, CdTe, and CdCl[sub 2]. To date the best devices ([similar to]9% AM1.5) have been obtained after a post-deposition anneal at 400 [degree]C. In addition, cells have been fabricated with the combination of LDPVD CdS, rf-sputtered CdTe, and LDPVD CdCl[sub 2]. The performance of these cells indicates considerable promise for the potential of rf sputtering for CdTe photovoltaic devices. The physical mechanisms of LDPVD have been studied by transient optical spectroscopy on the laser ablation plume. These measurements have shown that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a large fraction which is highly excited internally ([ge]6 eV) and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. Quality of as-grown and annealed films has been analyzed by optical absorption. Raman scattering, photoluminescence, electrical conductivity, Hall effect, x-ray diffraction, and SEM/EDS.

  16. Photoluminescence waveguiding in CdSe and CdTe QDs-PMMA nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Suarez, I; Gordillo, H; Abargues, R; Albert, S; Martinez-Pastor, J, E-mail: isaac.suarez@uv.es [UMDO - Unidad Asociada al CSIC-IMM, Instituto de Ciencia de los Materiales, Universidad de Valencia, PO Box 22085, 46071 Valencia (Spain)

    2011-10-28

    In this paper, active planar waveguides based on the incorporation of CdSe and CdTe nanocrystal quantum dots in a polymer matrix are demonstrated. In the case of doping the polymer with both types of quantum dots, the nanocomposite film guides both emitted colors, green (550 nm, CdTe) and orange (600 nm, CdSe). The optical pumping laser can be coupled not only with a standard end-fire coupling system, but also directing the beam to the surface of the sample, indicating a good absorption cross-section and waveguide properties. To achieve these results, a study of the nanocomposite optical properties as a function of the nanocrystal concentration is presented and the optimum conditions are found for waveguiding.

  17. Adsorption of organic layers over electrodeposited magnetite (Fe3O4) thin films

    International Nuclear Information System (INIS)

    Research highlights: → Adherent low roughness magnetite films ranging from 80 nm to 3.75 μm-thick were electrodeposited on Au/glass substrates under galvanostatic control. → X-ray diffraction and magnetic measurements corroborates the purity of the electrodeposited magnetite. → Both dodecanethiol and oleic acid are shown to adsorb on the magnetite prepared at low temperature, significantly inducing the hydrophobicity of the surface. → Contact angle and voltammetric measurements, as well as XPS confirm the monolayers formation. - Abstract: The formation of monolayers of two organic compounds (oleic acid and dodecanethiol) over magnetite films was studied. Magnetite films ranging from 80 nm to 3.75 μm-thick were electrodeposited on Au on glass substrates under galvanostatic control, with deposition parameters optimized for minimum surface roughness. Films were characterised by SEM and AFM, showing granular deposits with a low rms roughness of 5-40 nm measured over an area of 1 μm2. The growth rate was estimated by measuring cross-sections of the thin films. Pure magnetite with an fcc structure is observed in XRD diffractograms. The adsorption of both oleic acid and dodecanethiol on the magnetite films was tested by immersing them in ethanol solutions containing the organic molecules, for different deposition time, temperature and cleaning procedure. Monolayer formation in both cases was studied by contact angle and voltammetric measurements, as well as XPS.

  18. Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells

    OpenAIRE

    Gerbaux, X.; Pianelli, A.; Hadni, A.; Jeanniard, C.; Strimer, P.

    1980-01-01

    The growth of CdTe oriented thin films by the ENSH method - i.e. Epitaxial Nucleation in Sub-microscopic Holes of an intermediate layer closely applied on a bulk single crystal — has been recently described. The CdTe films are generally difficult to detach from the bulk crystal. However free films are needed to study the infrared transmission in the spectral region of high absorption. To get them, the vitreous or amorphous thin intermediate layers are substituted by quite soluble an oriented ...

  19. Effect of ZnO films on CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    Liu Tingliang; He Xulin; Zhang Jingquan; Feng Lianghuan; Wu Lili; Li Wei; Zeng Guanggen; Li Bing

    2012-01-01

    The ZnO high resistivity transparent (HRT) layers were prepared by DC magnetron sputtering on the 1mm borosilicate glass with 150 nm 1TO coating.The structural,optical and electrical properties of the as-deposited films were investigated by XRD,UV/Vis spectroscopy and four-probe technology.The interface characters of the ITO/ZnO and ZnO/CdS systems were studied by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) depth profiling tests.The results show that ZnO has good optical and electrical properties.The insertion of the ZnO films decreases the energy barrier between ITO and CdS films.The energy conversion efficiency and quantum efficiency were found to be 12.77% (8.9%) and > 90% (79%) with or (without)ZnO films of CdTe solar cells.Furthermore,the effect of thickness,mobility and carrier density of ZnO films on CdTe solar cells was analyzed by AMPD-1D.

  20. Effect of ZnO films on CdTe solar cells

    International Nuclear Information System (INIS)

    The ZnO high resistivity transparent (HRT) layers were prepared by DC magnetron sputtering on the 1 mm borosilicate glass with 150 nm ITO coating. The structural, optical and electrical properties of the as-deposited films were investigated by XRD, UV/Vis spectroscopy and four-probe technology. The interface characters of the ITO/ZnO and ZnO/CdS systems were studied by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) depth profiling tests. The results show that ZnO has good optical and electrical properties. The insertion of the ZnO films decreases the energy barrier between ITO and CdS films. The energy conversion efficiency and quantum efficiency were found to be 12.77% (8.9%) and > 90% (79%) with or (without) ZnO films of CdTe solar cells. Furthermore, the effect of thickness, mobility and carrier density of ZnO films on CdTe solar cells was analyzed by AMPD-1D. (semiconductor materials)

  1. Electrodeposition of nanocrystalline silver films and nanowires from the ionic liquid 1-ethyl-3-methylimidazolium trifluoromethylsulfonate

    International Nuclear Information System (INIS)

    We report in this paper on the electrodeposition of nanocrystalline silver films and nanowires in the air and water stable ionic liquid 1-ethyl-3-methylimidazolium trifluoromethylsulfonate [EMIm]TfO containing Ag(TfO) as a source of silver. The study was performed by means of cyclic voltammetry and chronoamperometry, and the electrodeposits were characterized by SEM-EDX and XRD. The cyclic voltammetry behaviour showed typical reduction and oxidation peaks corresponding to the deposition and stripping of silver in the employed electrolyte. XRD patterns of the electrodeposited silver layers revealed the characteristic peaks of crystalline silver with crystallites in the nanosize regime. Silver nanowires with average diameters and lengths of about 200 nm and 3 μm, respectively, were prepared by potentiostatic deposition within a commercial nuclear track-etched polycarbonate template.

  2. Photo-responsivity characterizations of CdTe films for direct-conversion X-ray detectors

    International Nuclear Information System (INIS)

    We have fabricated and investigated thin, polycrystalline, cadmium-telluride (CdTe) films in order to utilize them for optical switching readout layers in direct-conversion X-ray detectors. The polycrystalline CdTe films are fabricated on ITO glasses by using the physical vapor deposition (PVD) method at a slow deposition rate and a pressure of 10-6 torr. CdTe films with thicknesses of 5 and 20 μm are grown. The electrical and the optical characteristics of the CdTe films are investigated by measuring the dark-current and the photo-current as functions of the applied field under different wavelengths of light. Higher photo-currents are generated at the longer wavelengths of light for the same applied voltage. When a higher electrical field is applied to the 20 μm-thick CdTe film, a higher dark-current, a higher photo-current, a larger number of charges, and a higher quantum efficiency are generated.

  3. Optical properties of oxygenated CdTe thin films

    Science.gov (United States)

    Zapata-Navarro, A.; Peña-Chapa, J. L.; Villagrán De León, J. C.

    1996-07-01

    Cadmium telluride oxide films (CdTe-O) were grown by a radio frequency sputtering technique on glass slide substrates using a controlled plasma (Ar-N2O). The films were studied by Auger electron spectroscopy (AES) and optical transmission. We demonstrate that the oxidation process enhances the transmittance of the films into the visible part of the spectrum depending on the oxygen concentration.

  4. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  5. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    Science.gov (United States)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  6. Study of CuInSe{sub 2} thin films prepared by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, S.N.; Li, L.; Qiu, C.X.; Shih, I.; Champness, C.H. [Electrical Engineering Dept., McGill University, University Street, Montreal, QU (Canada)

    1995-07-30

    Thin films of p-type CuInSe{sub 2} prepared by a one-step electrodeposition method have been studied by constructing CdS/CuInSe{sub 2} junctions. After the electrodeposition, the CuInSe{sub 2} films were treated either in vacuum or in Ar. Cells of the form CdS (high {sigma})/CdS (low {sigma})/CuInSe{sub 2} were then fabricated for studying the electrodeposited films. Measurements were specifically carried out to determine the diffusion length of minority carriers in the p-type CuInSe{sub 2}. It was found that the minority carrier diffusion length in CuInSe{sub 2} films treated in Ar was generally greater than that for films treated in vacuum under similar conditions. A small area cell (active area 0.11 cm{sup 2}) with a conversion efficiency of about 7% (under 125 mW/cm{sup 2} illumination) has been fabricated

  7. Electrochromic Properties of Iridium Oxide Films Prepared by Pulsed Anodic Electrodeposition

    Science.gov (United States)

    Jung, Youngwoo; Tak, Yongsug; Lee, Jaeyoung

    2002-12-01

    Thin films of iridium oxide to be used as an electrochromic material were prepared by pulsed anodic current electrodeposition onto indium tin oxide (ITO) coated glass substrates. Before the pulsed electrodeposition, iridium oxide films formed by cyclic voltammetry (CV) played an important role in good adhesion as a seed layer. Iridium oxide films with light-blue color (100 mC/cm2) were deposited when anodic current of 0.07 mA/cm2 for 0.5 sec was superimposed on off-time of 0.5 sec (i.e., zero current) in each cycle. During CV experiment in phosphate buffered saline solution, electrodeposited iridium oxide films exhibited anodic electrochromism of blue and black color at two oxidation potentials (i.e., the ejection of H+) of +0.5 V and +0.9 V (vs. SCE), respectively, while on the cathodic scan, black thin film became colorless due to the injection of H+. When +0.9 V and -0.7 V were applied for coloring and bleaching observation in different pulse voltammetry, minimal times needed for each process are 9 sec and 5 sec, respectively.

  8. Physical properties of spray deposited CdTe thin films: PEC performance

    Institute of Scientific and Technical Information of China (English)

    V. M. Nikale; S. S. Shinde; C. H. Bhosale; K.Y. Rajpure

    2011-01-01

    p-CdTe thin films were prepared by spray pyrolysis under different ambient conditions and characterized using photoelectrochemical (PEC),X-ray diffraction (XRD),scanning electron microscopy,energy-dispersive analysis by X-ray (EDAX),and optical transmission studies.The different preparative parameters viz solution pH,solution quantity,substrate temperature and solution concentration have been optimized by the PEC technique in order to get good-quality photosensitive material.XRD analysis shows the polycrystalline nature of the film,having cubic structure with strong (111) orientation.Micrographs reveal that grains are uniformly distributed over the surface of the substrate indicating the well-defined growth ofpolycrystalline CdTe thin film.The EDAX study for the sample deposited at optimized preparative parameters shows the nearly stoichiometric Cd:Te ratio.Optical absorption shows the presence of direct transition with band gap energy of 1.5 eV.Deposited films exhibit the highest photocurrent of 2.3 mA,a photovoltage of 462 mV,a 0.48 fill factor and 3.4% efficiency for the optimized preparative parameters.

  9. Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    M. Rigana Begam

    2013-07-01

    Full Text Available Nanocrystalline Cadmium Telluride (CdTe thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been investigated. All the CdTe films exhibited zinc blende structure with (111 preferential orientation. The crystallite size of the films increased from 35 nm to 116 nm with the increase of substrate temperature and the band gap of the films decreased from 2.87 eV to 2.05 eV with the increase of the crystallite size.

  10. The activation of thin film CdTe solar cells using alternative chlorine containing compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B., E-mail: B.Maniscalco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); Abbas, A.; Bowers, J.W.; Kaminski, P.M.; Bass, K. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom); West, G. [Department of Materials, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering (United Kingdom)

    2015-05-01

    The re-crystallisation of thin film cadmium telluride (CdTe) using cadmium chloride (CdCl{sub 2}) is a vital process for obtaining high efficiency photovoltaic devices. However, the precise micro-structural mechanisms involved are not well understood. In this study, we have used alternative chlorine-containing compounds to determine if these can also assist the re-crystallisation of the CdTe layer and to understand the separate roles of cadmium and chlorine during the activation. The compounds used were: tellurium tetrachloride (TeCl{sub 4}), cadmium acetate (Cd(CH{sub 3}CO{sub 2}){sub 2}), hydrochloric acid (HCl) and zinc chloride (ZnCl{sub 2}). TeCl{sub 4} was used to assess the role of Cl and the formation of a Te-rich outer layer which may assist the formation of the back contact. (Cd(CH{sub 3}CO{sub 2}){sub 2}) and HCl were used to distinguish between the roles of cadmium and chlorine in the process. Finally, ZnCl{sub 2} was employed as an alternative to CdCl{sub 2}. We report on the efficacy of using these alternative Cl-containing compounds to remove the high density of planar defects present in untreated CdTe. - Highlights: • Cadmium chloride (CdCl{sub 2}) activation treatment • Alternative chlorine containing compounds • Microstructure analysis and electrical performances.

  11. Anomalous scaling in surface roughness evaluation of electrodeposited nanocrystalline Pt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nabiyouni, G., E-mail: g-nabiyouni@araku.ac.ir [Department of Physics, University of Arak, Beheshti Avenue, Arak 38156 (Iran, Islamic Republic of); Farahani, B. Jalali [Electrical Engineering Department, Arizona State University, Goldwater Building 340, Tempe, AZ (United States)

    2009-11-15

    Atomic force microscopy (AFM) is used to measure the surface roughness of crystalline Pt thin films as a function of film thickness and growth rate. Our films were electrodeposited on Au/Cr/glass substrates, under galvanostatic control (constant current density), from a single electrolyte containing Pt{sup 4+} ions. Crystalline structure of the films was confirmed by X-ray diffraction (XRD) technique. The effect of growth rate (deposition current density) and film thickness (deposition time) on the kinetic roughening of the films were studied using AFM and roughness calculation. The data is consistent with a rather complex behaviour known as 'anomalous scaling' where both local and large scale roughnesses show power law dependence on the film thickness.

  12. Preparation and characterization of Cu-In-S thin films by electrodeposition

    International Nuclear Information System (INIS)

    In this paper, we report the preparation and characterization of Cu-In-S thin films on stainless steel prepared by electrodeposition technique. The electrolytic bath used for preparation of the thin films consists of metal salts dissolved in a buffer solution. This buffer solution can control the formation and composition of thin films. In order to get adequate crystalline of CuInS2 thin films, the as deposited films were annealed in N2-atmosphere. Samples were characterized using X-ray diffraction (XRD), electron probe micro-analysis (EPMA), and scanning electron microscopy (SEM). The band-gap value of the material was estimated using optical transmittance and reflectance data on thin films deposited on commercial glass/indium tin oxide (ITO) substrates. It was found that the band-gap of the films is close to 1.5 eV

  13. The Electrochemical Degradation of Poly(3,4-ethylenedioxythiophene) Films Electrodeposited from Aqueous Solutions

    Science.gov (United States)

    Láng, Gyözö G.; Ujvári, Mária; Vesztergom, Soma; Kondratiev, Veniamin; Gubicza, Jenö; Szekeres, Krisztina J.

    2016-09-01

    In this review, results of recent studies on the electrochemical stability and degradation properties of poly(3,4-ethylenedioxythiophene) films are summarized, with particular emphasis on the structural changes induced by overoxidation and electrochemical degradation. The most important electrodeposition methods for the preparation of PEDOT films in surfactant free aqueous media have also been summarized, and several experimental techniques suitable for monitoring the degradation process have been discussed. Morphological changes in PEDOT films during overoxidation have been analyzed. Overoxidation mechanisms proposed in the literature have been surveyed.

  14. Nanostructured ZnO Films Electrodeposited on Hydrophilic Substrate Utilizing Cooperative Surface Assembly

    Institute of Scientific and Technical Information of China (English)

    YANG Lirong; JIN Zhengguo; WU Weibing; BU Shaojing

    2006-01-01

    Nanoporous amorphous ZnO films with lamellar structure were electrodeposited on the hydrophilic substrate by utilizing cooperative surface assembly of anionic sodium dodecyl sulfonate (SDS) at a very low concentration and inorganic species Zn(NO3)2 under the influence of an electrostatic potential. The deposited films were characterized by X-ray diffraction (XRD) in the range of low-angle and wide-angle, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and UV-Vis light absorption spectroscopy. The formation mechanism of the films was elementarily discussed.

  15. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  16. Dual-bath electrodeposition of n-type Bi–Te/Bi–Se multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matsuoka, Ken; Okuhata, Mitsuaki; Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp

    2015-11-15

    N-type Bi–Te/Bi–Se multilayer thin films were prepared by dual-bath electrodeposition. We varied the number of layers from 2 to 10 while the total film thickness was maintained at approximately 1 μm. All the multilayer films displayed the X-ray diffraction peaks normally observed from individual Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystal structures, indicating that both phases coexist in the multilayer. The cross-section of the 10-layer Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains but the boundaries between the layers were not planar. The Seebeck coefficient was almost constant throughout the entire range of our experiment, but the electrical conductivity of the multilayer thin films increased significantly as the number of layers was increased. This may be because the electron mobility increases as the thickness of each layer is decreased. As a result of the increased electrical conductivity, the power factor also increased with the number of layers. The maximum power factor was 1.44 μW/(cm K{sup 2}) for the 10-layer Bi–Te/Bi–Se film, this was approximately 3 times higher than that of the 2-layer sample. - Highlights: • N-type Bi–Te/Bi–Se multilayer thin films were deposited by electrodeposition. • We employed a dual-bath electrodeposition process for preparing the multilayers. • The Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains. • The electrical conductivity increased as the number of layers was increased. • The power factor improved by 3 times as the number of layers was increased.

  17. Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V.; Kee, R.; Wolden, C.; Kestner, J.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Fahrenbruch, A.

    2000-05-30

    ITN's three year project Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High Efficiency Thin Film PV Devices has the overall objectives of improving thin film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16% efficient CdTe PV films, i.e., close spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstration of APCVD of CdTe films, discovery of fundamental mass transport parameters, application of established engineering principles to the deposition of CdTe films, and verification of reactor design principles which could be used to design high throughput, high yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation and ultimately to higher device conversion efficiency and greater stability. Under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two dimension measurements and modeling. Accomplishments of the second year of the APCVD subcontract include: deposition of the first APCVD CdTe; identification of deficiencies in the first generation APCVD reactor; design, fabrication and testing of a ``simplified'' APCVD reactor; deposition of the first dense, adherent APCVD CdTe films; fabrication of the first APCVD CdTe PV device; modeling effects of CdSTe and SnOx layers; and electrical modeling of grain boundaries.

  18. Electrodeposition of CuInX (X=Se,Te) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N.; Rajeshwar, K.

    1986-01-15

    CuInX (X=Se,Te) thin films were electrodeposited and characterized by X-ray diffraction, electron probe microanalyses and Auger electron spectroscopy. New data are presented on the electrochemistry of the deposition process and on the cyclic voltammetric behavior of two different electrolytes Cu/sup +//Cu/sup 2+/ with In/sup 3+/ and SeO/sub 2/ respectively. Finally, some preliminary data are presented for CdS/CuInSe heterojunctions.

  19. Electrical behaviour, characteristics and properties of anodic aluminium oxide films coloured by nickel electrodeposition

    OpenAIRE

    Arurault, Laurent; Zamora, Gaël; Vilar, Virginie; Winterton, Peter; Bes, René

    2010-01-01

    Porous anodic films on 1050 aluminium substrate were coloured by AC electrodeposition of nickel. Several experiments were performed at different deposition voltages and nickel concentrations in the electrolyte in order to correlate the applied electrical power to the electrical behaviour, as well as the characteristics and properties of the coatings. The content of nickel inside the coatings reached 1.67 g/m2, depending on the experimental conditions. According to the applied AC voltage in...

  20. Effects of nitrogen atoms of benzotriazole and its derivatives on the properties of electrodeposited Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hoe Chul; Kim, Myung Jun; Lim, Taeho; Park, Kyung Ju; Kim, Kwang Hwan; Choe, Seunghoe [School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Kim, Soo-Kil, E-mail: sookilkim@cau.ac.kr [School of Integrative Engineering, Chung-Ang University, 221 Heukseok-dong, Dongjak-gu, Seoul 156-756 (Korea, Republic of); Kim, Jae Jeong, E-mail: jjkimm@snu.ac.kr [School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of)

    2014-01-01

    Additives having azole groups with different numbers of nitrogen atoms, such as indole, benzimidazole, indazole, benzotriazole (BTA), and 1H-benzotriazole-methanol (BTA-MeOH) were adopted to improve the mechanical hardness of electrodeposited Cu films. The effects of these additives on the film properties were elucidated in relation to their number of nitrogen atoms. Electrochemical current–potential behaviors showed that the additives containing three nitrogen atoms (BTA and BTA-MeOH) more effectively inhibited Cu electrodeposition. The inhibition strongly affected the film properties, resulting in reduced grain size and surface roughness, and increased resistivity and hardness. Cu films deposited with BTA or BTA-MeOH also exhibited 35% reduced grain size and 1.5-time higher hardness than Cu films deposited in electrolyte containing other BTA-derivatives having fewer nitrogen atoms. This notable grain refining effect of BTA and BTA-MeOH can be evaluated with respect to the strong interaction of their nitrogen atoms with the substrate and the copper ions, as well. - Highlights: • Additives of similar structure containing 1, 2, and 3 nitrogen atoms were used. • Additives with 3 nitrogen atoms more strongly inhibited Cu deposition than others. • Additives containing 3 nitrogen atoms efficiently affected film properties. • Additives having 3 nitrogen atoms remarkably improved film hardness.

  1. Electrodeposited porous metal oxide films with interconnected nanoparticles applied as anode of lithium ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Anguo, E-mail: hixiaoanguo@126.com; Zhou, Shibiao; Zuo, Chenggang; Zhuan, Yongbing; Ding, Xiang

    2014-12-15

    Highlights: • Highly porous NiO film is prepared by a co-electrodeposition method. • Porous NiO film is composed of interconnected nanoparticles. • Porous structure is favorable for fast ion/electron transfer. • Porous NiO film shows good lithium ion storage properties. - Abstract: Controllable synthesis of porous metal oxide films is highly desirable for high-performance electrochemical devices. In this work, a highly porous NiO film composed of interconnected nanoparticles is prepared by a simple co-electrodeposition method. The nanoparticles in the NiO film have a size ranging from 30 to 100 nm and construct large-quantity pores of 20–120 nm. As an anode material for lithium ion batteries, the highly porous NiO film electrode delivers a high discharge capacity of 700 mA h g{sup −1} at 0.2 C, as well as good high-rate performance. After 100 cycles at 0.2 C, a specific capacitance of 517 mA h g{sup −1} is attained. The good electrochemical performance is attributed to the interconnected porous structure, which facilitates the diffusion of ion and electron, and provides large reaction surface area leading to improved performance.

  2. Influence of thermal treatment temperatures on CdTe nanocrystal films and photoelectric properties of ITO/CdTe/Al

    Institute of Scientific and Technical Information of China (English)

    Xu Wenqing; Qu Shengchun; Wang Kefan; Bi Yu; Liu Kong; Wang Zhanguo

    2012-01-01

    The influence of sintering temperatures on solution-processed cadmium telluride (CdTe) nanocrystal films is studied in order to maximize the performance of CdTe/Al Schottky nanocrystal solar cells,The best overall performance of 2.67% efficiency at air mass 1.5 was achieved from devices with CdTe films sintered at 350 ℃ X-ray diffraction,scanning electron microscopy and UV-vis absorption measurements show that the CdTe nanocrystal grains began to grow remarkably well when sintering temperatures increased to 350 ℃.By analyzing the current-voltage characteristics,we find that the short-circuit current densities of devices increase with sintering temperatures ranging from 200 to 400 ℃,but,the over-sintered (450 ℃) treatment induces the shunting of devices.

  3. Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni–W alloy films

    International Nuclear Information System (INIS)

    Nanocrystalline nickel–tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni–12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni–12.7 at.%W was in the range of 1.49–5.14 MPa √m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: ► Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. ► Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. ► Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. ► Fracture toughness values lower than that of nanocrystalline nickel.

  4. Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni-W alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, D.E.J., E-mail: david.armstrong@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Haseeb, A.S.M.A. [Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Roberts, S.G.; Wilkinson, A.J. [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Bade, K. [Institut fuer Mikrostrukturtechnik (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2012-04-30

    Nanocrystalline nickel-tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni-12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni-12.7 at.%W was in the range of 1.49-5.14 MPa {radical}m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: Black-Right-Pointing-Pointer Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. Black-Right-Pointing-Pointer Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. Black-Right-Pointing-Pointer Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. Black-Right-Pointing-Pointer Fracture toughness values lower than that of nanocrystalline nickel.

  5. Sulfidation of electrodeposited microcrystalline/nanocrystalline cuprous oxide thin films for solar energy applications

    Science.gov (United States)

    Jayathilaka, K. M. D. C.; Kapaklis, V.; Siripala, W.; Jayanetti, J. K. D. S.

    2012-12-01

    Grain size of polycrystalline semiconductor thin films in solar cells is optimized to enhance the efficiency of solar cells. This paper reports results on an investigation carried out on electrodeposited n-type cuprous oxide (Cu2O) thin films on Ti substrates with small crystallites and sulfidation of them to produce a thin-film solar cell. During electrodeposition of Cu2O films, pH of an aqueous acetate bath was optimized to obtain films of grain size of about 100 nm, that were then used as templates to grow thicker n-type nanocrystalline Cu2O films. XRD and SEM analysis revealed that the films were of single phase and the substrates were well covered by the films. A junction of Cu2O/CuxS was formed by partially sulfiding the Cu2O films using an aqueous sodium sulfide solution. It was observed that the photovoltaic properties of nano Cu2O/CuxS heterojunction structures are better than micro Cu2O/CuxS heterojunction solar cells. Resulting Ti/nano Cu2O/CuxS/Au solar cell structure produced an energy conversion efficiency of 0.54%, Voc = 610 mV and Jsc = 3.4 mA cm-2, under AM 1.5 illumination. This is a significant improvement compared to the use of microcrystalline thin film Cu2O in the solar cell structure where the efficiency of the cell was limited to 0.11%. This improvement is attributed mainly to the increased film surface area associated with nanocrystalline Cu2O films.

  6. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  7. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

  8. Giant magnetoresistance of electrodeposited Cu–Co–Ni alloy films

    Indian Academy of Sciences (India)

    İ H Karahan; Ö F Bakkaloğlu; M Bedir

    2007-01-01

    Electrodeposition of CuCoNi alloys was performed in an acid–citrate medium. Nickel density parameter was varied in order to analyse its influence on the magnetoresistance. The structure and giant magneto- resistance (GMR) effect of CuCoNi alloys have been investigated. The maximum value for GMR ratio, at room temperature is 1% at a field of 12 kOe, and at 20 K is 2.1% at a field of 8.5 kOe for 3.1 Ni. The MR ratio of Cu100−−CoNi alloys first increases and then decreases monotonically with increasing Ni content. The GMR and its dependence on magnetic field and temperature were discussed.

  9. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    Science.gov (United States)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  10. Advances in CuInSe sub 2 and CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shafarmann, W.N.; Birkmire, R.W.; Farding, D.A.; McCandless, B.E.; Mondal, A.; Phillips, J.E.; Varrin, R.D. Jr. (Delaware Univ., Newark (USA). Inst. of Energy Conversion)

    1991-05-01

    Research on CuInSe{sub 2} and CdTe thin film solar cells is discussed. CuInSe{sub 2} was deposited by selenization of Cu/In layers and was used to make a 10% efficient CuInSe{sub 2}/(CdZn)S cell. Characterization of the reaction mechanisms is described. The open-circuit voltage V{sub oc} of CuInSe{sub 2}/(CdZn)S cells is dominated by recombination in the space charge region, so increassing the band gap or decreasing the width of this region should increase V{sub oc}. Increasing the band gap with a thin Cu(InGa)Se{sub 2} layer at the CuInSe{sub 2} surface has demonstrated increased V{sub oc} with collection out to the CuInSe{sub 2} band gap. A post-deposition treatment and contacting process for evaporated CdS/CdTe cells was developed and high efficiency cells were made. Several steps in the process, including a CdCl{sub 2} coating, a 400deg C heat treatment, and a contact containing copper are critical. ZnTe films were deposited from an aqueous solution as a contact to CdTe. (orig.).

  11. Characterization of thin film CdS-CdTe solar cells. [CDS-CDTE

    Energy Technology Data Exchange (ETDEWEB)

    Singh, V.P.; Brafman, H.; Makwana, J. (Texas Univ., El Paso (USA). Dept. of Electrical Engineering); McClure, J.C. (Texas Univ., El Paso, TX (USA). Metallurgical and Materials Engineering Dept.)

    1991-02-01

    Current-voltage, junction capacitance and optical characteristics of thin film CdS-CdTe cells on sprayed CdS films were measured. These characteristics have some interesting features such as reversal of the polarity of the a.c. short-circuit current and the a.c. open-circuit voltage when a large forward bias is applied across the cell. The reverse saturation current density j{sub 0} increases from 5.9x10{sup -9} A cm{sup -2} in the dark to 18.1x10{sup -6} A cm{sup -2} under '1 sun' illumination. Diode ideality factors are higher than 2.0 and the slope {alpha} of log I vs. V curve is almost temperature independent. The zero-bias depletion layer width is 1.9 {mu}m. The experimental results are interpreted by a model which proposes a highly compensated layer in CdTe and a high space charge layer in CdTe next to the CdS-CdTe interface. The origin of the high space charge layer is thought to be the ionization of a deep trap level at energy E{sub T} below the conduction band edge. For our calculations, we have used E{sub T}=0.45 eV. (orig.).

  12. Investigation of Formation Process of the Chrome-free Passivation Film of Electrodeposited Zinc

    Institute of Scientific and Technical Information of China (English)

    ZHU Li-qun; YANG Fei; HUANG Hui-jie

    2007-01-01

    The feasibility was investigated to substitute chrome-free passivation treatment of electrodeposited zinc in a titanium bath for chromate passivation treatment. The formation mechanism of the chrome-free passivation film was further analyzed. The surface morphologies and the elemental compositions of the treated samples with varied immersion times were observed by scanning electron microscopy (SEM) and determined by energy dispersion spectrometry (EDS), respectively. The electrode potential of the sample surface was recorded in the film formation process. The changes of the electrode potential are in accordance with that of SEM and EDS of the sample surface. The results of X-ray photoelectron spectroscopy (XPS) show the chrome-free passivation film composed of ZnO, SiO2,TiO2, Zn4Si2O7(OH)2, and SrF2. The anode zinc dissolution and the local pH value increase due to the cathode hydrogen ion reduction process result in the formation of the chrome-free passivation film. The macro-images of the chrome-free passivation films formed on electrodeposited zinc show that the color of the film changes from blue to iridescence with the increase of the immersion times.

  13. Synthesis and characterization of Cu2SnSe3 thin films by electrodeposition route

    Science.gov (United States)

    Chihi, Adel; Bessais, Brahim

    2016-09-01

    A single phase Cu2SnSe3 polycrystalline semiconductor compound has been easily synthesized through electrodeposition technique onto conductive glass ITO substrates from an acidic solution at room temperature for the first time. The electrodeposition of CTSe films was studied using cyclic voltammetry, structural, morphological, optical, and electrical measurements. The effects of the annealing temperature on the growth of CTSe films were studied. XRD and Raman studies showed that the annealed CTSe thin films have a polycrystalline nature with a cubic crystal structure with a preferential orientation (111), and the crystalline size of the CTSe thin films increases as the annealing temperature increases. The AFM investigations show that the deposited film layer widely varies on annealing temperature. The optical band gap of CTSe alloys is inversely related to the grain size and decreases from 1.08 to 0.96 eV. Finally, the Hall effect measurements reveal that the all CTSe films are p-type semiconductors in particular a sample annealed at 300 °C exhibit a high Hall mobility 5.27 cm2/V s and low electrical resistivity 0.91 Ω cm compared to other samples.

  14. Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

    1999-07-01

    We have induced recrystallization of small grain CdTe thin films deposited at low temperatures by close-spaced sublimation (CSS), using a standard CdCl{sub 2} annealing treatment. We also studied the changes in the physical properties of CdTe films deposited by radio-frequency magnetron sputtering after the same post-deposition processing. We demonstrated that the effects of CdCl{sub 2} on the physical properties of CdTe films are similar, and independent of the deposition method. The recrystallization process is linked directly to the grain size and stress in the films. These studies indicated the feasibility of using lower-temperature processes in fabricating efficient CSS CdTe solar cells. We believe that, after the optimization of the parameters of the chemical treatment, these films can attain a quality similar to CSS films grown using current standard conditions. {copyright} {ital 1999 American Vacuum Society.}

  15. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  16. Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

    Science.gov (United States)

    Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

    2013-11-01

    The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ˜ -2.4%/ °C from 20 to 140 °C.

  17. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni, E-mail: gz3e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Hildebrand, Helga; Schmuki, Patrik [Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  18. Change in planar hall effect ratio of Ni–Co films produced by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Karpuz, Ali, E-mail: alikarpuz@kmu.edu.tr [Physics Department, Science and Literature Faculty, Balikesir University, 10145 Balikesir (Turkey); Kockar, Hakan [Physics Department, Science and Literature Faculty, Balikesir University, 10145 Balikesir (Turkey); Alper, Mursel [Physics Department, Science and Literature Faculty, Uludag University, 16059 Bursa (Turkey)

    2015-01-01

    Ni–Co films were produced by the electrodeposition technique and their magnetotransport properties were studied. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) ratios were found using the van der Pauw setup at room temperature. It was observed that the PHE ratios were larger than the obtained AMR ratios. While the maximum changes in longitudinal and transversal magnetoresistance ratios were 6.8% and 11.0%, respectively, the change in PHE values was up to 500%. In the PHE measurements, the magnetoresistance orientation depends on the electrical resistance values which occur in branches of the films.

  19. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  20. Cu-doped CdS and its application in CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Yi [School of Automation, Wuhan University of Technology, Wuhan, Hubei 430070 (China); College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212 (China); Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Deliang, E-mail: eedewang@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  1. Cu-doped CdS and its application in CdTe thin film solar cell

    Science.gov (United States)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  2. Inline atmospheric pressure metal-organic chemical vapour deposition for thin film CdTe solar cells

    International Nuclear Information System (INIS)

    A detailed study has been undertaken to assess the deposition of CdTe for thin film devices via an inline atmospheric pressure metal-organic chemical vapour deposition (AP-MOCVD) reactor. The precursors for CdTe synthesis were released from a showerhead assembly normal to a transparent conductive oxide (TCO)/glass substrate, previously coated with a CdZnS window layer using a conventional batch AP-MOCVD reactor with horizontal flow delivery. Under a simulated illumination with air mass coefficient 1.5 (AM1.5), the initial best cell conversion efficiency (11.2%) for such hybrid cells was comparable to a reference device efficiency (∼ 13%), grown entirely in the AP-MOCVD batch reactor. The performance and structure of the hybrid and conventional devices are compared for spectral response, CdTe grain morphology and crystal structure. These preliminary results reported on the transfer from a batch to an inline AP-MOCVD reactor which holds a good potential for the large-scale production of thin film photovoltaics devices and related materials. - Highlights: • Inline metal-organic chemical vapour deposition (MOCVD) used to grow CdTe films • Desired dopant profiles in CdTe:As achieved with inline MOCVD reactor • Initial conversion efficiency of 11.2% was comparable to batch devices (∼ 13%). • Inline MOCVD holds a good potential for large-scale thin film photovoltaics production

  3. Cu-doped CdS and its application in CdTe thin film solar cell

    International Nuclear Information System (INIS)

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures

  4. Chemical structure of microcrystalline CdTe films grown by RF sputtering

    Science.gov (United States)

    Hernández-Calderón, I.; Jiménez-Sandoval, S.; Peña, J. L.; Sailer, V.

    1990-01-01

    We have applied X-ray photoemission and Auger spectroscopy techniques to the study of the stoichiometric properties of CdTe thin films grown by RF sputtering. The microcrystalline films were deposited on glass substrates held at temperatures between 50 and 200°C. They contain a mixture of the cubic (zinc-blende) and hexagonal (wurtzite) phases which are nearly stoichiometric. By using bulk and surface sensitive photoemission geometries it is shown that a tellurium oxide overlayer is always formed after exposure to air. A simple calculation shows that this overlayer is at most 10 Å thick. Cadmium seems to be insensitive to the presence of oxygen, as demonstrated by the absence of shifted Cd peaks in the X-ray spectra. It is shown that the low kinetic energy features in the Auger spectra ( oxide overlayer and contamination.

  5. Rocking disc electro-deposition of copper films on Mo/MoSe{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cummings, Charles Y.; Frith, Paul E. [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Zoppi, Guillaume; Forbes, Ian [Northumbria Photovoltaics Applications Centre, Northumbria University, NE1 8ST (United Kingdom); Rogers, Keith D. [Cranfield Health, Cranfield University, Shrivenham Campus, Swindon, SN6 8LA (United Kingdom); Lane, David W. [Department of Applied Science, Security and Resilience, Cranfield University, Shrivenham, Swindon, SN6 8LA (United Kingdom); Marken, Frank, E-mail: F.Marken@bath.ac.uk [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

    2011-08-31

    A novel electro-deposition method based on a rocking disc system with {pi}/3 amplitude and variable frequency is introduced. Uniform copper films were deposited from a 0.1 M CuSO{sub 4}/3.0 M NaOH/0.2 M sorbitol bath directly onto 12.1 cm{sup 2} Mo/MoSe{sub 2} substrates with X-ray diffraction showing a thickness variation of {+-}5% over this area. Investigation of the mass transport conditions suggests (i) uniform diffusion over the sample, (ii) a rate of mass transport proportional to the square root of the rocking rate, and (iii) turbulent conditions, which are able to dislodge gas bubbles during electro-deposition.

  6. Preparing Cu2ZnSnS4 films using the co-electrodeposition method with ionic liquids*

    Institute of Scientific and Technical Information of China (English)

    Chen Yong-Sheng; Wang Ying-Jun; Li Rui; Gu Jin-Hua; Lu Jing-Xiao; Yang Shi-E

    2012-01-01

    Cu2ZnSnS4(CZTS)films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400℃ for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/(Zn+Sn)=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 104 cm-1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.

  7. Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

    International Nuclear Information System (INIS)

    ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices

  8. Simple Formation of Nanostructured Molybdenum Disulfide Thin Films by Electrodeposition

    Directory of Open Access Journals (Sweden)

    S. K. Ghosh

    2013-01-01

    Full Text Available Nanostructured molybdenum disulfide thin films were deposited on various substrates by direct current (DC electrolysis form aqueous electrolyte containing molybdate and sulfide ions. Post deposition annealing at higher temperatures in the range 450–700°C transformed the as-deposited amorphous films to nanocrystalline structure. High temperature X-ray diffraction studies clearly recorded the crystal structure transformations associated with grain growth with increase in annealing temperature. Surface morphology investigations revealed featureless structure in case of as-deposited surface; upon annealing it converts into a surface with protruding nanotubes, nanorods, or dumbbell shape nanofeatures. UV-visible and FTIR spectra confirmed about the presence of Mo-S bonding in the deposited films. Transmission electron microscopic examination showed that the annealed MoS2 films consist of nanoballs, nanoribbons, and multiple wall nanotubes.

  9. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Science.gov (United States)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O2 pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm2. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O2 flow. Through this method, the compact and uniform CdTe film (30 × 40 cm2) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm2) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (Jsc) of the cell is 26.9 mA/cm2, open circuit voltage (Voc) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  10. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    Energy Technology Data Exchange (ETDEWEB)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  11. Super-hydrophobic nickel films with micro-nano hierarchical structure prepared by electrodeposition

    International Nuclear Information System (INIS)

    Super-hydrophobic nickel films were prepared by a simple and low cost electrodepositing method. The surface morphologies of the films characterized by scanning electronic microscope exhibit hierarchical structure with micro-nanocones array, which can be responsible for their super-hydrophobic characteristic (water contact angle over 150o) without chemical modification. The wettability of the film can be varied from super-hydrophobic (water contact angle 154o) to relatively hydrophilic (water contact angle 87o) by controlling the size of the micro-nanocones. The mechanism of the hydrophobic characteristic of nickel films with this unique structure was illustrated by several models. Such micro-nanostructure and its special wettability are expected to be applied in the practical industry.

  12. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    International Nuclear Information System (INIS)

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 deg. C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm2 and 89%, respectively) for the films oxidized at 425 deg. C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature

  13. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    Energy Technology Data Exchange (ETDEWEB)

    Uplane, M.M.; Mujawar, S.H.; Inamdar, A.I.; Shinde, P.S.; Sonavane, A.C. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India)], E-mail: psp_phy@unishivaji.ac.in

    2007-10-15

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 deg. C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm{sup 2} and 89%, respectively) for the films oxidized at 425 deg. C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  14. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    Science.gov (United States)

    Uplane, M. M.; Mujawar, S. H.; Inamdar, A. I.; Shinde, P. S.; Sonavane, A. C.; Patil, P. S.

    2007-10-01

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 °C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm 2 and 89%, respectively) for the films oxidized at 425 °C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  15. Band edges determination of CuInS2 thin films prepared by electrodeposition

    International Nuclear Information System (INIS)

    A CuInS2 (CIS) semiconductor thin film was growth by electrodeposition on a stainless steel substrate. In order to improve the polycrystallinity the samples were annealed in a N2 atmosphere. The films were characterized by electrochemical techniques and X ray diffraction and their band gaps were determined by photocurrent spectroscopy. When the electrolytic bath has the same concentration [Cu2+] = [In3+] the resulting film was of the n-type, while for different concentrations of Cu and In ions the film was of the p-type. A depletion zone during capacitance-voltage measurements at 10 kHz frequency was seen over the voltage range used. Using C-V plots in the depletion zone, flat-band potentials and the energetic position of band edges were calculated

  16. A Comparative Study on the Optical Properties of Multilayer CdSe / CdTe Thin Film with Single Layer CdTe and CdSe Films

    OpenAIRE

    M. Melvin David Kumar; Suganthi Devadason

    2013-01-01

    CdTe and CdSe single layer thin films and CdSe / CdTe multilayer (ML) thin film were prepared by using physical vapour deposition method. Optical properties of CdSe / CdTe multilayer thin film shows different behavior due to type II band structure alignment. Energy band gap value of CdSe / CdTe ML thin film is shifted to higher value than that of single layer CdTe film. This is due to decrease in crystallite size to dimension smaller than the Bohr exciton radius of CdTe (14 nm). Crystallite ...

  17. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    Science.gov (United States)

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  18. Electrodeposited polymer encapsulated nickel sulphide thin films: frequency switching material

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Sumanta, E-mail: sumantajana85@gmail.com [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Mukherjee, Nillohit [Centre of Excellence for Green Energy and Sensor Systems, Bengal Engineering and Science University, Howrah 711103, WB (India); Chakraborty, Biswajit [Department of Chemistry, Vivekananda Mahavidyalay, Burdwan 713103, WB (India); Mitra, Bibhas Chandra [Department of Physics, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Mondal, Anup, E-mail: anupmondal2000@yahoo.co.in [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India)

    2014-05-01

    Graphical abstract: Polyvinylpyrrolidone encapsulated NiS thin films were synthesized electrochemically. The light induced frequency switching study of the synthesized material was carried out and it was observed that the films performed well as a switching device under 1 Sun illumination. This pulse generation within an insulating polymer encapsulated semicondctor matrix (PVP NiS) might be due to surface covering which leads to reduction of recombination process. Highlights: • PVP-NiS thin films were electrochemically synthesized. • Encapsulation of PVP causes surface modification of NiS by reducing surface states. • The synthesized thin films were used as frequency switching material which generates ~ 50 Hz frequency under 1 Sun irradiation. Abstract: Polyvinylpyrrolidone (PVP) encapsulated nickel sulfide (NiS) thin films have been synthesized electrochemically from aqueous solution of hydrated nickel chloride (NiCl₂, 6H₂O), thioacetamide (CH₃C(S) NH₂) (TAA) and polyvinylpyrrolidone (PVP). Surface modification of nickel sulfide (NiS) thin films was achieved by this polymer encapsulation. X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), field emission scanning electron microscopy (FESEM) and Energy dispersive X-radiation (EDAX) techniques were used for the characterization of thin films. Infrared spectroscopy (IR) confirmed the formation of polymer encapsulated semiconductor. Frequency switching generation study shows that the encapsulated material could be used as a frequency switching device that generates a frequency ~ 50 Hz under 1 Sun illumination. Encapsulation with PVP causes surface modification that reduces the surface states and barrier height. As a result, the width of the depletion region decreases. So the number of electron-hole pairs increases. Consequently, the number of excitons and exciton related emission increases and this leads to reduction of recombination process and shows photo induced

  19. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  20. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  1. Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Mountinho, H. R.; Dhere, R. G.; Romero, M. J.; Jiang, C. S.; To, B.; Al-Jassim, M. M.

    2008-05-01

    This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.

  2. Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, R., E-mail: rodrigo.henriquez@ucv.cl [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Badan, A. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Grez, P.; Munoz, E.; Vera, J. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Dalchiele, E.A.; Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Gomez, H. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile)

    2011-05-01

    Highlights: > Electrodeposition of CdSe nanocrystalline semiconductor thin films. > Polycrystalline wurtzite structure with a slight (1010) preferred orientation. > Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

  3. Wide bandgap thin film solar cells from CdTe alloys

    International Nuclear Information System (INIS)

    Ternary films of CdZnTe and CdMnTe were grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), respectively, on glass/SnO2/CdS substrates with target bandgap of 1.7 to 1.8 eV for solar cell applications. The authors describe x-ray diffraction, surface photovoltage spectroscopy, and Auger electron spectroscopy measurements performed to estimate bandgap, compositional uniformity, and interface quality of the films. Front-wall CdTe cell (glass/SnO2/CdS/CdTe/ZnTe/Metal) efficiencies were --9%, while CdZnTe and CdMnTe efficiencies were --3.6% and 6%, respectively. n-i-p cell efficiencies were consistently higher than n-p cells. Optimum cell processing temperature for CdZnTe films was found to be less than 4000C. Higher processing temperatures caused a shift in bandgap coupled with film quality degradation

  4. Electrodeposited NiCoFe films from electrolytes with different Fe ion concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Kockar, Hakan, E-mail: hkockar@balikesir.edu.tr [Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagıs Yerleskesi, 10145 Balikesir (Turkey); Demirbas, Ozen, E-mail: ozendemirbas@hotmail.com [Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagıs Yerleskesi, 10145 Balikesir (Turkey); Kuru, Hilal, E-mail: htopcu@balikesir.edu.tr [Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagıs Yerleskesi, 10145 Balikesir (Turkey); Alper, Mursel, E-mail: malper@uludag.edu.tr [Uludag Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, 16059 Gorukle, Bursa (Turkey); Karaagac, Oznur, E-mail: karaagac@balikesir.edu.tr [Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagıs Yerleskesi, 10145 Balikesir (Turkey); Haciismailoglu, Murside, E-mail: msafak@uludag.edu.tr [Uludag Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, 16059 Gorukle, Bursa (Turkey); Ozergin, Ercument, E-mail: ercumentz@yahoo.com [Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagıs Yerleskesi, 10145 Balikesir (Turkey)

    2014-06-01

    Ternary NiCoFe films, relating their magnetic and magnetoresistance properties with film composition, and the corresponding crystal structure were investigated in terms of different Fe ion concentrations in the electrolyte. The current–time transients were recorded to control the growth of proper films. The film composition by energy dispersive X-ray spectroscopy revealed that as the Fe ion concentration in the electrolyte was increased, the Fe and Co contents in the films increased and Ni content decreased. From the structural analysis by X-ray diffraction, all films had a face-centred cubic structure and, no reflection from body-centred cubic (bcc) Fe was existed in all samples due to <12 at% Fe. The saturation magnetisation increased from 865 emu/cm{sup 3} to 1080 emu/cm{sup 3} and the coercivities decreased from 60 Oe to 13 Oe with increasing Fe and Co contents and decreasing Ni content in the films. All NiCoFe films showed anisotropic magnetoresistance. The longitudinal magnetoresistance magnitudes decreased from 6.3% to 2.2% with increasing Fe and Co contents and decreasing Ni in the films while the magnitudes of transverse magnetoresistance stayed almost constant at ∼5.0%. The variations in magnetic and magnetoresistive properties related to the crystal structure were attributed to the compositional changes caused by the variation of the Fe ion concentration in the electrolyte. - Highlights: • Structural and magnetic properties of electrodeposited NiCoFe films were studied. • The Fe and Co increased and Ni decreased with increasing Fe concentration. • All films had a face-centred cubic structure irrespective of the film content. • The M{sub s} increased and H{sub c} decreased with the change of film content. • All films showed AMR.

  5. X-ray, electron microscopy and photovoltaic studies on CdTe thin films deposited normally at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Saha, S.; Pal, U.; Samantaray, B.K.; Chaudhuri, A.K. (Indian Inst. of Tech., Kharagpur (IN). Dept. of Physics and Meteorology); Banerjee, H.D. (Indian Inst. of Tech., Kharagpur (India). Materials Science Centre)

    1990-12-01

    X-ray diffraction, transmission electron microscopy and electron diffraction studies were conducted on CdTe thin films deposited on glass substrates kept at different substrate temperatures. Variation of the different structural parameters, such as lattice constant, crystallite size, r.m.s. strain, dislocation density and stacking fault probability with substrate temperature, was investigated in the temperature range 300 to 498 K. An increase in the lattice constant and crystallite size values and a decrease in the other parameters with increase in temperature of the substrate was observed. A photovoltage was observed for CdTe film deposited normally on glass substrates kept at higher substrate temperatures. The development of photovoltage in the film is explained in the light of the formation of crystallites of variable structure. (author).

  6. Progress towards high efficiency thin film CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, K.W.; Eberspacher, C.; Cohen, F.; Avery, J.; Duran, G.; Bottenberg, W.

    1988-01-15

    This paper describes work investigating high rate cadmium telluride (CdTe) film deposition by close-space vapor transport, leading to 4 cm/sup 2/ tin oxide/CdTe solar cells of efficiency greater than 10%. Under a 100 mW cm/sup -2/ air mass 1.5 global spectrum, a cell of efficiency 10.5% had a short-circuit current of 28.1 mA cm/sup -2/, an open circuit voltage of 0.663 V and a fill factor of 0.563. Our major achievements include (1) the use of completely nonvacuum processing, (2) the fabrication of simple transparent conductive oxide/CdTe cells without need of a CdS window layer, and (3) screenprinted back contacts.

  7. Investigation of deposition parameters for the non-aqueous electroplating of CdTe films and application in electrochemical photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Gore, R.B.; Pandey, R.K.; Kulkarni, S.K.

    1989-03-01

    The cathodic deposition characteristics of Cd/sup 2+/ and Te/sup 4+/ in a non-aqueous electroplating bath have been studied. The deposition parameters have been optimised to yield uniform and well adhering films of CdTe in a non-aqueous medium. The influence of the potentiostatic and galvanostatic deposition conditions on the stoichiometry, structure and photoanodic behaviour of the CdTe films are also discussed.

  8. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  9. Coating of hydroxyapatite films on titanium substrates by electrodeposition under pulse current

    OpenAIRE

    HAYAKAWA, Tomoyasu; Kawashita, Masakazu; TAKAOAKA, Gikan H.

    2008-01-01

    Titanium (Ti) metal substrates were etched in sulfuric acid (H2SO4) with concentrations of 25, 50, 75 and 97% at 60°C for 30 min. Hydroxyapatite (HA) films were deposited onto unetched and etched substrates by an electrodeposition method under a pulse current. The electrolyte was metastable calcium phosphate solution that had 1.5 times the ion concentrations of human body fluid, but did not contain magnesium ion at 36.5°C. Deposition times were 90 min. We used the average current density of 0...

  10. Preparation and photocharacterization of Cu-Sb-Se films by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, A.M. [Departamento de Materiales Solares (CIE-UNAM), Centro de Ivestigacion en Energia, Temixco, Morelos 62580 (Mexico); Turner, J.A. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 (United States)

    2003-09-15

    Ternary semiconductor Cu-Sb-Se films were grown on 304 stainless-steel/Cr and ITO-glass using a combination of electrodeposition and chemical bath techniques. The samples were annealed in a N{sub 2} atmosphere at various temperatures and characterized by X-ray, electron probe microanalysis, current-voltage, capacitance-voltage and photocurrent spectroscopy. Photoelectrochemical studies were used to determinate the flat-band potential and the doping density of the material. These data lead to energetic considerations on the applicability of the Cu-Sb-Se electrode in the photoelectrochemical decomposition of water.

  11. Electrodeposition and Characterization of CulnSe2 Thin Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    LI Jianzhuang; ZHAO Xiujian; XIA Donglin

    2007-01-01

    CuInSe2 (CIS) thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass (SLG) substrates. A thermal processing in Se atmosphere at 450 ℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM), respectively. X-ray diffraction(XRD) studies show that the annealing in Se atmosphere at 450 ℃ promotes the structural formation of CIS chalcopyrite structure.

  12. An effective combination of electrodeposition and layer-by-layer assembly to construct composite films with luminescence switching behavior.

    Science.gov (United States)

    Gao, Wenmei; Ma, Hongwei; Zheng, Daming; Dong, Zhaojun; Wu, Lixin; Bi, Lihua

    2015-09-01

    This article presents a combination strategy of electrodeposition and a layer-by-layer assembly to fabricate functional composite films with luminescence switching behavior. Firstly, a novel green luminescence film consisting of 8-hydroxypyrene-1,3,6-trisulfonic acid trisodium salt (HOPTS) was first obtained on ITO by a facile electrodeposition method. Then, the multilayer films containing different layers of tungstophosphate K12.5Na1.5[NaP5W30O110]·15H2O (P5W30) were further fabricated on the green luminescence film to form the composite films [(HOPTS)50/(PDDA/P5W30)n] (n = 10, film 1; n = 27, film 2; n = 57, film 3). Cyclic voltammetry and fluorescence spectroscopy were used to characterize the electrochemical activity of P5W30 and the luminescence property of HOPTS in the composite films, respectively. Lastly, in situ UV-Vis spectroelectrochemical and fluorescence spectroelectrochemical measurements were applied to investigate the luminescence switching behaviors of the composite films controlled by the electrochromism component of P5W30 upon electrochemical modulation. In summary, the investigation results revealed that the electrodeposition method is convenient and rapid, and thus-prepared composite films showed improved luminescence switching performance in terms of switching process, activation cycles, coloration efficiency, and bleached-state transparency as well as good stability, wide voltage range and good reversibility. Therefore, the present study offers a new fabrication route for the multifunctional composite films through an effective combination of electrodeposition and layer-by-layer assembly technique. PMID:26219637

  13. Red shift for CdTe nanoparticle thin films and suspensions during heating.

    Science.gov (United States)

    Dunn, S; Gardner, H C; Bertoni, C; Gallardo, D E; Gaponik, N; Eychmüller, A

    2008-05-01

    The work that we have conducted shows that temperature affects the wavelength of light emitted from CdTe nanoparticle clusters that are in a suspension or deposited into thin films via a layer-by-layer process. Compared with the stock suspension, the films show an initial photoluminescent shift, of circa 6-8 nm to the red, when the particles are deposited. A shift of circa 6-8 nm is also seen when the suspensions are first heated to 85 degrees C from room temperature (20 degrees C) having been stored in a fridge at 5 degrees C. This shift is non-recoverable. With continual cycling from room temperature to 85 degrees C the suspensions show a slight tendency for the emission to move increasingly to the red; whereas the films show no such tendency. In both cases, the range in emission is ca 10 nm from the room temperature state to 80 degrees C. The intensity of the emission from the film drops abruptly (ca 50% reduction) after one cycle of heating; in the suspension there is an initial increase (ca 3-5% increase) in intensity before it decays. We see that the shift towards the red has been attributed to energy transfer or a rearrangement of the packing of the particles in the thin films. After conducting analysis of the films using scanning probe microscopy we have determined that a change in the morphology is responsible for the permanent shift in emission wavelength associated with prolonged heating. The influence of traps has not been ruled out, but the morphological change in the samples is very large and is likely to be the dominating mechanism affecting change for the red shift at room temperature. PMID:18572681

  14. Effect of CdCl2 treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl2 solution treatment have been studied with a major focus on the influence of CdCl2 treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2 μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250 °C. Aqueous CdCl2 concentration varied from 0.3 mol to 1.2 mol with the annealing temperature from 360 °C to 450 °C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360 °C with 0.3 M to1.2 M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl2 concentration and subsequent annealing temperature. The highest carrier concentration of 1.05 × 1014/cm3 was found for the CdTe thin films treated with 0.3 M CdCl2 solution followed by an annealing treatment at 420 °C for 20 min. - Highlights: • CdTe thin films are grown as absorption layers in CdTe solar cells by sputtering. • CdTe film quality in terms of structural and electronic properties is examined. • All growth parameters are optimized in the range of 1.5 to 2 μm CdTe films

  15. Effect of CdCl{sub 2} treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.A. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Hossain, M.S.; Aliyu, M.M. [Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Karim, M.R. [Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia); Razykov, T.; Sopian, K. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshad@eng.ukm.my [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia)

    2013-11-01

    The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl{sub 2} solution treatment have been studied with a major focus on the influence of CdCl{sub 2} treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2 μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250 °C. Aqueous CdCl{sub 2} concentration varied from 0.3 mol to 1.2 mol with the annealing temperature from 360 °C to 450 °C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360 °C with 0.3 M to1.2 M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl{sub 2} concentration and subsequent annealing temperature. The highest carrier concentration of 1.05 × 10{sup 14}/cm{sup 3} was found for the CdTe thin films treated with 0.3 M CdCl{sub 2} solution followed by an annealing treatment at 420 °C for 20 min. - Highlights: • CdTe thin films are grown as absorption layers in CdTe solar cells by sputtering. • CdTe film quality in terms of structural and electronic properties is examined. • All growth parameters are optimized in the range of 1.5 to 2 μm CdTe films.

  16. Characterization of Electrodeposited Nanoporous Ni and NiCu Films

    Science.gov (United States)

    Koboski, Kyla; Hampton, Jennifer

    2013-03-01

    Nanoporous thin films are interesting candidates to catalyze certain reactions because of their large surface areas. This project focuses on the deposition of Ni and NiCu thin films on a Au substrate and further explores the catalysis of the hydrogen evolution reaction (HER). Depositions are created using controlled potential electrolysis. Samples are then dealloyed using linear sweep voltammetry. Before and after the dealloying, all the samples are characterized using multiple techniques. Electrochemical capacitance measurements allow comparisons of sample roughness. HER measurements characterize the reactivity of the sample with respect to the specific catalytic reaction. The Tafel equation is fit to the data to obtain information about the kinetics of the HER of the samples. Other methods for characterizing the samples include scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The use of SEM allows images to be taken of the deposition to determine the change in the structure pre- and post- dealloy of the sample. EDS allows the elemental composition of the deposition to be determined before and after the dealloy stage. This material is based upon work supported by the National Science Foundation under RUI Grant DMR-1104725, MRI Grant CHE-1126462, MRI Grant CHE-0959282, and ARI grant PHY-0963317.

  17. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico)]. E-mail: osvaldo@esfm.ipn.mx; Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Ruiz, C.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Sastre-Hernandez, J. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Morales-Acevedo, A. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); CINVESTAV-IPN, Electrical Engineering Department, Av. IPN No2508, C. P. 07360, Mexico, D. F. (Mexico); Cruz-Gandarilla, F. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Saucedo, E. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas-I.P.N., Edificio de Fisica Avanzada, av. IPN y Juan de Dios Batiz s/n U.P.A.L.M. 07738 Mexico D.F. (Mexico); Bermudez, V. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain)

    2007-05-31

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J {sub sc}), open circuit voltage (V {sub OC}), fill factor (FF) and efficiency ({eta}) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed.

  18. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Cd1−xZnxS and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd1−xZnxS coatings were applied onto 15 × 15 cm2 float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd0.36Zn0.64S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd0.36Zn0.64S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd0.36Zn0.64S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells

  19. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  20. Controlled electrodeposition of Au monolayer film on ionic liquid

    Science.gov (United States)

    Ma, Qiang; Pang, Liuqing; Li, Man; Zhang, Yunxia; Ren, Xianpei; Liu, Shengzhong Frank

    2016-05-01

    Gold (Au) nanoparticles have been attractive for centuries for their vibrant appearance enhanced by their interaction with sunlight. Nowadays, there have been tremendous research efforts to develop them for high-tech applications including therapeutic agents, sensors, organic photovoltaics, medical applications, electronics and catalysis. However, there remains to be a challenge to fabricate a monolayer Au coating with complete coverage in controlled fashion. Here we present a facile method to deposit a uniform Au monolayer (ML) film on the [BMIM][PF6] ionic liquid substrate using an electrochemical deposition process. It demonstrates that it is feasible to prepare a solid phase coating on the liquid-based substrate. Moreover, the thickness of the monolayer coating can be controlled to a layer-by-layer accuracy.

  1. Characterization of CdTe films with in situ CdCl{sub 2} treatment grown by a simple vapor phase deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Rios Flores, Araceli, E-mail: arios@mda.cinvestav.mx [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310 Merida, Yucatan (Mexico); Castro-Rodriguez, R.; Pena, J.L. [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310 Merida, Yucatan (Mexico); Romeo, N.; Bosio, A. [Dipartimento di fisica, Universita di Parma, Campus Universitario, Parco Area delle Scienza, 43100 Parma (Italy)

    2009-05-15

    A unique vapor phase deposition (VPD) technique was designed and built to achieve in situ CdCl{sub 2} treatment of CdTe film. The substrate temperature was 400 deg. C, and the temperature of CdTe mixture with CdCl{sub 2} source was 500 deg. C. The structural and morphological properties of CdTe have been studied as a function of wt.% CdCl{sub 2} concentration by using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). XRD measurements show that the presence of CdCl{sub 2} vapor induces (1 1 1)-oriented growth in the CdTe film. SEM measurements have shown enhance growth of grains, in the presence of CdCl{sub 2}. From AFM the roughness of the films showed a heavy dependence on CdCl{sub 2} concentration. In the presence of 4% CdCl{sub 2} concentration, the CdTe films roughness has a root mean square (rms) value of about 275 A. This value is about 831 A for the non-treated CdTe films.

  2. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  3. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells

    Science.gov (United States)

    Shahzad, Naseem

    1991-05-01

    Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522 eV and a resistivity of 22Ω-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350° C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.

  4. Preparation of Perpendicular GdFeCo Magnetic Thin Films with Pulse Electrodeposition Technique Utilizing Molten Salt as Electrolyte

    Science.gov (United States)

    Yang, Chao-Chen; Shu, Min-Fong

    2007-12-01

    We have utilized ZnCl2-dimethylsulfone (DMSO2) as the electrolyte with added GdCl3, FeCl2, and CoCl2, for electrodepositing a perpendicular GdFeCo magnetic thin film. The reaction at the electrode surface and the electrical conductivity of the ionic substance at different ionic concentrations were studied by cyclic voltammetry and a computerized direct current method. Moreover, the electrodeposition of the GdFeCo thin film was determined by a pulse potential method. Relation between the composition of the deposited thin film and control parameters including applied potentials was determined by EDS analysis. An amorphous structure and the thickness of the thin film were obtained by TEM analysis. Its roughness and uniformity were determined by AFM analysis. Meanwhile, a perpendicular magnetic property and pinning magnetic domain of the thin film were analyzed from results of AGM and MFM.

  5. Application of original assemblies of polyelectrolytes, urease and electrodeposited polyaniline as sensitive films of potentiometric urea biosensors

    International Nuclear Information System (INIS)

    Highlights: • Elaboration of original polymer materials using self-assembly and electrochemistry. • In situ monitoring of the growth of the polymer materials. • Development of urea electrochemical sensors using a home-made mini-potentiostat. - Abstract: Original assemblies were prepared for use as sensitive films of potentiometric enzyme urea sensors, and compared to identify the more efficient structure with respect to stability. These films included electrodeposited polyaniline, used as transducer, urease, used as catalyst, and biocompatible polyelectrolytes, used as a matrix to preserve the integrity of the enzyme in the sensitive film. Two kinds of assemblies were done: the first one consisted in the adsorption of urease onto a polyaniline film followed by the adsorption of a chitosan-carboxymethylpullulan multilayer film, while the second one consisted in the adsorption of a urease-chitosan multilayer film onto an electrodeposited polyaniline film. The morphological features and growth of these assemblies were characterized by scanning electron microscopy and quartz crystal microbalance, respectively. This allowed us to demonstrate that the assemblies are successfully formed onto the electrodes of the sensors. The potentiometric responses of both assemblies were then measured as a function of urea concentration using a home-made portable potentiostat. The electrochemical response of resulting sensors was fast and sensitive for both types of assemblies, but the stability in time was much better for the films obtained from alternative adsorption of urease and chitosan onto a layer of urease adsorbed over electrodeposited polyaniline

  6. Electrodeposition of Er-Ni Alloy Film in Dimethylsulfoxide

    Institute of Scientific and Technical Information of China (English)

    李高仁; 童叶翔; 刘冠昆

    2002-01-01

    The cyclic voltammetry and chronoamperometry were used to investigate the electrochemical behaviors of Er(Ⅲ) and Ni(Ⅱ) in LiClO4-DMSO(dimethylsufoxide) system on Pt and Cu electrodes. Experimental results indicated that the reduction of Er(Ⅲ) to Er and Ni(Ⅱ) to Ni were irreversible in one step on Pt and Cu electrodes. The diffusion coefficient and electron transfer coefficient of Er(Ⅲ) in 0.01 mol*L-1 ErCl3 -0.1 mol*L-1 LiClO4-DMSO system at 303K were 1.47×10-10 m2*s-1 and 0.108 respectively, and the diffusion coefficient and electron transfer coefficient of Ni(Ⅱ) in 0.01 mol*L-1 NiCl2-0.1 mol*L-1 LiClO4-DMSO system at 303K were 3.38×10-10 m2*s-1 and 0.160 respectively. The homogeneous, strong adhesive Er-Ni alloy films with metallic lu- stre was prepared by potentiostatic electrolysis on Cu electrode in ErCl3-NiCl2-LiClO4-DMSO system at -1.90~-2.55 V (vs SCE).

  7. Physical and electrical characteristics of NiFe thin films using ultrasonic assisted pulse electrodeposition

    Science.gov (United States)

    Asa Deepthi, K.; Balachandran, R.; Ong, B. H.; Tan, K. B.; Wong, H. Y.; Yow, H. K.; Srimala, S.

    2016-01-01

    Nickel iron (NiFe) thin films were prepared on the copper substrate by ultrasonic assisted pulse electrodeposition under galvanostatic mode. Careful control of the thin films deposition is essential as the electrical properties of the films could be greatly affected, particularly if low quality films are produced. The preparation of NiFe/Cu thin films was aimed to reduce the grain size of NiFe particles, surface roughness and electrical resistivity of the copper substrates. Various parameters were systematically studied including current magnitude, deposition time and ultrasonic bath temperature. The optimized conditions to obtain NiFe permalloy, which subsequently applied to all investigated samples, were found at a current magnitude of 70 mA deposited for a duration of 2 min under ultrasonic bath temperature of 27 °C. The composition of NiFe permalloy was as close as Ni 80.71% and Fe 19.29% and the surface roughness was reduced from 12.76 nm to 2.25 nm. The films electrical resistivity was decreased nearly sevenfold from an initial value of 67.32 μΩ cm to 9.46 μΩ cm.

  8. Electrodeposition of nickel from low temperature sulfamate electrolytes.Part 1 :Electrochemistry and film stress.

    Energy Technology Data Exchange (ETDEWEB)

    Hachman, John T.; Kelly, J.J. (IBM/T.J. Watson Research Center, Yorktown Heights, NY); Talin, Albert Alec; Goods, Steven Howard

    2005-11-01

    The film stress of Ni films deposited at near-ambient temperatures from sulfamate electrolytes was studied. The particulate filtering of the electrolyte, a routine industrial practice, becomes an important deposition parameter at lower bath temperatures. At 28 C, elevated tensile film stress develops at low current densities (<10 mA/cm{sup 2}) if the electrolyte is filtered. Filtering at higher current densities has a negligible effect on film stress. A similar though less pronounced trend is observed at 32 C. Sulfate-based Ni plating baths display similar film stress sensitivity to filtering, suggesting that this is a general effect for Ni electrodeposition. It is shown that filtering does not significantly change the current efficiency or the pH near the surface during deposition. The observed changes in film stress are thus attributed not to adsorbed hydrogen but instead to the effects of filtering on the formation and concentration of polyborate species due to the decreased solubility of boric acid at near-ambient temperatures.

  9. A study on electrodeposited NiFe1− alloy films

    Indian Academy of Sciences (India)

    M Bedir; Ö F Bakkaloğlu; İ H Karahan; M Öztaş

    2006-06-01

    NiFe1− (0.22 ≤ ≤ 0.62) alloy films were grown by electrodeposition technique. A shift in diffraction peaks of NiFe and Ni3Fe was detected with increasing Ni content. The highest positive magnetoresistance ratio was detected as 5% in Ni0.51Fe0.49. Positive and negative anisotropic magnetoresistance were observed in longitudinal and transverse geometries respectively. The highest anisotropic magnetoresistance ratio of 9.8% was also detected in Ni0.51Fe0.49. The angular variation of magnetoresistance was studied. Magnetisation loop curves show that NiFe alloy films have a linear decreasing anisotropy constant with increasing Ni deposit content and show a decreasing behavior of coercivity which indicates soft magnetic property with increasing Ni deposit content.

  10. Extremely durable biofouling-resistant metallic surfaces based on electrodeposited nanoporous tungstite films on steel

    Science.gov (United States)

    Tesler, Alexander B.; Kim, Philseok; Kolle, Stefan; Howell, Caitlin; Ahanotu, Onye; Aizenberg, Joanna

    2015-10-01

    Formation of unwanted deposits on steels during their interaction with liquids is an inherent problem that often leads to corrosion, biofouling and results in reduction in durability and function. Here we report a new route to form anti-fouling steel surfaces by electrodeposition of nanoporous tungsten oxide (TO) films. TO-modified steels are as mechanically durable as bare steel and highly tolerant to compressive and tensile stresses due to chemical bonding to the substrate and island-like morphology. When inherently superhydrophilic TO coatings are converted to superhydrophobic, they remain non-wetting even after impingement with yttria-stabilized-zirconia particles, or exposure to ultraviolet light and extreme temperatures. Upon lubrication, these surfaces display omniphobicity against highly contaminating media retaining hitherto unseen mechanical durability. To illustrate the applicability of such a durable coating in biofouling conditions, we modified naval construction steels and surgical instruments and demonstrated significantly reduced marine algal film adhesion, Escherichia coli attachment and blood staining.

  11. Extremely durable biofouling-resistant metallic surfaces based on electrodeposited nanoporous tungstite films on steel.

    Science.gov (United States)

    Tesler, Alexander B; Kim, Philseok; Kolle, Stefan; Howell, Caitlin; Ahanotu, Onye; Aizenberg, Joanna

    2015-10-20

    Formation of unwanted deposits on steels during their interaction with liquids is an inherent problem that often leads to corrosion, biofouling and results in reduction in durability and function. Here we report a new route to form anti-fouling steel surfaces by electrodeposition of nanoporous tungsten oxide (TO) films. TO-modified steels are as mechanically durable as bare steel and highly tolerant to compressive and tensile stresses due to chemical bonding to the substrate and island-like morphology. When inherently superhydrophilic TO coatings are converted to superhydrophobic, they remain non-wetting even after impingement with yttria-stabilized-zirconia particles, or exposure to ultraviolet light and extreme temperatures. Upon lubrication, these surfaces display omniphobicity against highly contaminating media retaining hitherto unseen mechanical durability. To illustrate the applicability of such a durable coating in biofouling conditions, we modified naval construction steels and surgical instruments and demonstrated significantly reduced marine algal film adhesion, Escherichia coli attachment and blood staining.

  12. Dependence of resistivity of electrodeposited Ni single layer and Ni/Cu multilayer thin films on the film thickness, and electron mean free path measurements of these films

    Directory of Open Access Journals (Sweden)

    Gholamreza Nabiyouni

    2007-09-01

    Full Text Available   The Boltzmann equation is a semiclassical approach to the calculation of the electrical conductivity. In this work we will first introduce a simple model for calculation of thin film resistivity and show that in an appropriate condition the resistivity of thin films depends on the electron mean free path, so that studying and measurement of thin films resistivity as a function of film thickness would lead to calculation of the electron mean free path in the films. Ni single layers and Ni/Cu multilayers were grown using electrodeposition technique in potentiostatic mode. The films also characterized using x-ray diffraction technique and the results show at least in the growth direction, the films were grown epitaxially and follow their substrate textures.

  13. A photoluminescence comparison of CdTe thin films grown by molecular-beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum

    Science.gov (United States)

    Feng, Z. C.; Bevan, M. J.; Krishnaswamy, S. V.; Choyke, W. J.

    1988-09-01

    High perfection CdTe thin films have been grown on (001) InSb and CdTe substrates by molecular-beam epitaxy, metalorganic chemical vapor deposition (MOCVD), and sputtering in ultrahigh vacuum techniques. The quality of the as-grown CdTe films are characterized by 2-K photoluminescence. The spectra show strong and sharp exciton transitions and weak 1.40-1.50-eV defect-related bands. Radiative defect densities of lower than 0.002 are realized. High-resolution spectroscopy shows that the full width at half maximum of the principal bound exciton lines is about 0.1 meV. Such small ρ values and narrow photoluminescence lines have not been previously reported. The largest luminescence efficiency is observed for MOCVD-CdTe films grown on CdTe substrates. A variety of impurities appear to be responsible for the observed radiative transitions in these three kinds of CdTe films. We attempt to assign the observed impurity related lines by a comparison with ``known'' impurities in bulk CdTe spectra given in the literature.

  14. Substrate heating effect on the growth of a CdTe film on an InSb substrate by vacuum evaporation

    Science.gov (United States)

    Jiann-Ruey, Chen; Mau-Phon, Houng; Fenq-Lin, Jenq; Chien-Shyong, Fang; Wan-Sun, Tse

    1991-07-01

    Epitaxial CdTe thin films were grown on the (111) oriented InSb substrate by vacuum evaporation, with the substrate kept at 190-225°C during the film deposition. The chamber pressure during film deposition was at 3.5 × 10-6 mbar. X-ray diffraction was used to determine the film structure, while the full width at half maximum (FWHM) of the X-ray diffraction peak was used to examine the crystallinity of the as-deposited films. The film morphology was observed by the scanning electron microscope (SEM), and the film composition was determined by electron probe microanalysis (EPMA). The film quality was examined by infrared transmission spectroscopy. Results indicate that the quality of the grown CdTe films was improved with the higher substrate temperature during the film deposition.

  15. Structural and optical properties of Cu{sub 2}O crystalline electrodeposited films

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Iuri S.; Martins, Cesar A.; Zoldan, Vinicius C.; Viegas, Alexandre D.C. [Laboratório de Filmes Finos e Superfícies, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis-SC 88040-900 (Brazil); Dias da Silva, José H. [Laboratório de Filmes Semicondutores, Faculdade de Ciências, Universidade Estadual Paulista, Bauru-SP 17033-360 (Brazil); Pasa, André A., E-mail: andre.pasa@ufsc.br [Laboratório de Filmes Finos e Superfícies, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis-SC 88040-900 (Brazil)

    2014-07-01

    Cuprous oxide (Cu{sub 2}O) films were electrodeposited on Ni/Si(100), Au/Si(100), and Si(100) substrates from aqueous solution at room temperature. The thicknesses of the films were varied in the range of 250 to 1250 nm. It was shown that at pH 10.00, an increase of just 1% can change the Cu{sub 2}O texture from [100] to [111]. Atomic force microscopy reveals that Cu{sub 2}O(100) and Cu{sub 2}O(111) films present rounded and faceted grains, respectively. For the thinner films, it was also observed that the substrate has a strong influence on the Cu{sub 2}O orientation. The Cu{sub 2}O refraction index (n) and band gap energy (E{sub g}) were obtained from reflectance measurements. The Wemple and DiDomenico single oscillator model was applied to n data, and the dispersion energy E{sub d} of this model was addressed to describe the density of Cu vacancies in the Cu{sub 2}O lattice. It was found out that the density of this kind of defect is higher for [111] oriented Cu{sub 2}O films and decreases as a function of the film thickness. This analysis also indicated that the dynamics of formation of the Cu vacancy depends on the Cu{sub 2}O lattice parameter. This parameter showed that Cu{sub 2}O films are initially under compressive misfit stress, but at a critical thickness, the lattice parameter abruptly increases in order to relax the Cu{sub 2}O lattice structure. This sudden transition is also observed in the E{sub g} data and is attributed to the enhancement of Cu–Cu internetwork interaction that is inversely proportional to E{sub g}. - Highlights: • Cu{sub 2}O films were electrodeposited on Au/Si(100), Ni/Si(100), and Si(100) substrates. • Growth orientation can be selected by small changes of 1% on electrolyte pH. • Cu–Cu internetwork strengthening reduces Cu{sub 2}O band gap energy. • We report that Wemple–DiDomenico model can describe density of Cu vacancies (V{sub Cu}). • Density of V{sub Cu} in Cu{sub 2}O lattice depends strongly on deposition

  16. CdTe devices and method of manufacturing same

    Science.gov (United States)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  17. A study on the electrodeposition of NiFe alloy thin films using chronocoulometry and electrochemical quartz crystal microgravimetry

    CERN Document Server

    Myung, N S

    2001-01-01

    Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

  18. Effect of electrodeposition potential on composition and morphology of CIGS absorber thin film

    Indian Academy of Sciences (India)

    N D Sang; P H Quang; L T Tu; D T B Hop

    2013-08-01

    CuInGaSe (CIGS) thin films were deposited on Mo/soda-lime glass substrates by electrodeposition at different potentials ranging from −0.3 to −1.1 V vs Ag/AgCl. Cyclic voltammetry (CV) studies of unitary Cu, Ga, In and Se systems, binary Cu–Se, Ga–Se and In–Se systems and quaternary Cu–In–Ga–Se were carried out to understand the mechanism of deposition of each constituent. Concentration of the films was determined by energy dispersive spectroscopy. Structure and morphology of the films were characterized by X-ray diffraction and scanning electron microscope. The underpotential deposition mechanism of Cu–Se and In–Se phases was observed in voltammograms of binary and quaternary systems. Variation in composition with applied potentials was explained by cyclic voltammetry (CV) data. A suitable potential range from −0.8 to −1.0 V was found for obtaining films with desired and stable stoichiometry. In the post-annealing films, chalcopyrite structure starts forming in the samples deposited at −0.5 V and grows on varying the applied potential towards negative direction. By adjusting the composition of electrolyte, we obtained the desired stoichiometry of Cu(In0.7Ga0.3)Se2.

  19. Electrodeposition and characterization of undoped and nitrogen-doped ZnSe films

    Energy Technology Data Exchange (ETDEWEB)

    Manzoli, A., E-mail: alexandra@cnpdia.embrapa.br [Institute of Chemistry of Sao Carlos (IQSC) - University of Sao Paulo (USP), P. O. Box 780, 13560-970, Sao Carlos, SP (Brazil); National Nanotechnology Laboratory for Agribusiness (LNNA), Embrapa Agricultural Instrumentation, P. O. Box 741, 13560-970, Sao Carlos, SP (Brazil); Eguiluz, K.I.B.; Salazar-Banda, G.R. [Institute of Chemistry of Sao Carlos (IQSC) - University of Sao Paulo (USP), P. O. Box 780, 13560-970, Sao Carlos, SP (Brazil); Institute of Technology and Research/University of Tiradentes, Av. Murilo Dantas, 300, 49032-490, Aracaju, SE (Brazil); Machado, S.A.S. [Institute of Chemistry of Sao Carlos (IQSC) - University of Sao Paulo (USP), P. O. Box 780, 13560-970, Sao Carlos, SP (Brazil)

    2010-05-15

    Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine-tin oxide (FTO) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L{sup -1} and a film when it was 0.2 or 0.3 mol L{sup -1}. The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film-electrolyte interface capacitance (C) at various applied potentials (E{sub ap}) and plotting Mott-Schottky curves (C{sup -2} vs E{sub ap}), whose slope sign was used to identify p-type ZnSe.

  20. Easy Formation of Nanodisk-Dendritic ZnO Film via Controlled Electrodeposition Process

    Directory of Open Access Journals (Sweden)

    Nur Azimah Abd Samad

    2015-01-01

    Full Text Available A facile electrodeposition synthesis was introduced to prepare the nanodisk-dendritic ZnO film using a mixture solution of zinc chloride (ZnCl2 with potassium chloride (KCl that acted as a directing agent. This study aims to determine the best photoelectrochemical response for solar-induced water splitting. Based on our results obtained, it was found that an average diagonal of nanodisk was approximately 1.70 µm with the thickness of ≈150 nm that was successfully grown on the surface of substrate. The photocatalytic and photoelectrochemical responses of the resultant wurtzite type based-nanodisk-dendrite ZnO film as compared to the as-prepared ZnO film were monitored and evaluated. A photocurrent density of 19.87 mA/cm2 under ultraviolet rays and 14.05 mA/cm2 under visible light (500 nm was recorded for the newly developed nanodisk-dendritic ZnO thin film. It was believed that nanodisk-dendritic ZnO film can harvest more incident photons from the illumination to generate more photoinduced charge carriers to trigger the photocatalytic and photoelectrochemical reactions. Moreover, strong light scattering effects and high specific surface area of 2D nanostructures aid in the incident light absorption from any direction.

  1. Low-resistivity Cu film electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate for the application to the interconnection of electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Sung Ki; Kim, Myung Jun; Koo, Hyo-Chol [Research Center for Energy Conversion and Storage, School of Chemical and Biological Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-744 (Korea, Republic of); Kwon, Oh Joong [Department of Mechanical Engineering, University of Incheon, 319 Incheondaegil, Nam-gu, Incheon, 402-749 (Korea, Republic of); Kim, Jae Jeong, E-mail: jjkimm@snu.ac.kr [Research Center for Energy Conversion and Storage, School of Chemical and Biological Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-744 (Korea, Republic of)

    2012-01-01

    In this study, we analyzed the properties of Cu films electrodeposited with 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonate (DPS) as an organic additive in damascene Cu electrodeposition, in comparison with bis(sulfopropyl) disulfide (SPS). It was observed that the resistivity of Cu film electrodeposited with DPS was lower than that with SPS. Spectroscopic analyses showed that the impurity level and crystallinity of Cu films are almost the same, but the difference was found in the film roughness. Low roughness of Cu film electrodeposited with DPS led to the low resistivity, and it was speculated that the low roughness is related to the strong adsorption through the nitrogen atom in the DPS molecule.

  2. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    OpenAIRE

    Claudio Davet Gutiérrez-Lazos; Mauricio Ortega-López; Pérez-Guzmán, Manuel A; A. Mauricio Espinoza-Rivas; Francisco Solís-Pomar; Rebeca Ortega-Amaya; L. Gerardo Silva-Vidaurri; Virginia C. Castro-Peña; Eduardo Pérez-Tijerina

    2014-01-01

    This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis i...

  3. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

    Directory of Open Access Journals (Sweden)

    Miguel Muñoz Rojo

    2015-08-01

    Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

  4. Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Abuin, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Mascaraque, A., E-mail: arantzazu.mascaraque@fis.ucm.es [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Gonzalez-Barrio, M.A. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Perez, L. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Instituto de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Bi films on GaAs substrates with different orientations. Black-Right-Pointing-Pointer Ultra thin films - 50 nm - are continuous and smooth. Black-Right-Pointing-Pointer Bi always grows with (0 1 L) orientations. Black-Right-Pointing-Pointer Epitaxial growth onto As terminated surfaces. Black-Right-Pointing-Pointer Proposed model based on structural and chemical considerations. - Abstract: We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. {omega}-2{theta} X-ray diffraction scans only show reflections that can be indexed as (0 1 L), meaning that Bi grows onto GaAs only in combinations of the (0 0 1) and (0 1 0) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(1 1 0) and GaAs(1 1 1)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

  5. Corrosion behaviour of super-hydrophobic electrodeposited nickel-cobalt alloy film

    Science.gov (United States)

    Khorsand, S.; Raeissi, K.; Ashrafizadeh, F.; Arenas, M. A.; Conde, A.

    2016-02-01

    Hierarchical super-hydrophobic Ni-Co film with enhanced corrosion resistance was fabricated on a copper substrate by one-step electrodeposition process. The contact angle and water repellence properties of the Ni-Co film were measured to determine its wettability. The Ni-Co film exhibited excellent super-hydrophobic properties with a static water contact angle of 158° and a sliding angle of ≤5°. The corrosion performance of the super-hydrophobic surface (SHS) was investigated by electrochemical potentiodynamic measurements and electrochemical impedance spectroscopy in NaCl solution (3.5 wt.%). Moreover, to study the long-term stability of the super-hydrophobic film, SHS samples were immersed into NaCl solution and their corrosion behaviour was investigated by the electrochemical impedance spectroscopy. Additionally, the changes of surface wettability were also monitored over the whole immersion time up to 11 days. Experimental results indicated that super-hydrophobic samples had much more corrosion resistance in comparison with freshly prepared samples or the bare substrate.

  6. On the interpretation of {sup 57}Fe Moessbauer spectra from CdTe thin films with substitutions of Fe, In, and Sb

    Energy Technology Data Exchange (ETDEWEB)

    Yee-Madeira, H. [Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City (Mexico). Dept. de Fisica]|[Depto. de Fisica, Esc. Sup. de Fisica y Matematicas (ESFM) del IPN, Edif. 9, U. P. ALM, 07738, Mexico D.F. (Mexico); Reguera, E.; Zelaya-Angel, O.; Sanchez-Sinencio, F. [Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City (Mexico). Dept. de Fisica; Montiel-Sanchez, H. [Depto. de Fisica, Esc. Sup. de Fisica y Matematicas (ESFM) del IPN, Edif. 9, U. P. ALM, 07738, Mexico D.F. (Mexico); Scorzelli, R.B. [Centro Brasileiro de Pesquisas Fisicas, Rua Xavier Sigaud 150, CEP 22290, Urca, Rio de Janeiro (Brazil)

    1999-02-26

    {sup 57}Fe Moessbauer spectra of well characterized CdTe thin films with substitutions of Fe, In and Sb were recorded and interpreted according to the changes in the ionic radii and electronic properties of these substitutions relative to Cd in the CdTe framework. The literature reports of certain correlations among the iron valence, Fe{sup 2+} or Fe{sup 3+}, and the crystallinity of the films are critically discussed and an explanation of their origin is provided. The Moessbauer results also allow direct understanding of the effect of In and Sb substitutions on the properties of the films. (orig.) 22 refs.

  7. Influence of solution pH in electrodeposited iron diselenide thin films

    International Nuclear Information System (INIS)

    Highlights: → Number of works are available on preparation and characterization of iron diselenide thin films through some other techniques. → Among them, there are only few reports are available regarding growth and characterization of iron diselenide thin films through electrochemical route. → This is the first work to focus the solution pH effect in electrodeposited iron diselenide thin films. → Effect of solution pH on structural, morphological properties of the films are analyzed and reported. - Abstract: Thin films of iron diselenide (FeSe2) have been prepared on indium doped tin oxide coated conducting glass (ITO) substrates from an aqueous electrolytic bath containing FeSO4 and SeO2. Growth mechanism has been analyzed using cyclic voltammetry. The potential region in which the formation of FeSe2 occurs is found to be -450 mV versus SCE. X-ray diffraction analysis showed that the deposited films are found to exhibit orthorhombic structure with preferential orientation along (1 2 0) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters such as crystallite size, rms microstrain, dislocation density and stacking fault probability. Surface morphology and film composition have been analyzed using scanning electron microscopy, atomic force microscopy and energy dispersive analysis by X-rays, respectively. Optical parameters such as band gap, refractive index, extinction coefficient, real and imaginary dielectric constants, dielectric susceptibility and optical conductivity have been determined from optical absorption measurements. The observed results are discussed in detail.

  8. Characterization of Sputtered CdTe Thin Films with Electron Backscatter Diffraction and Correlation with Device Performance.

    Science.gov (United States)

    Nowell, Matthew M; Scarpulla, Michael A; Paudel, Naba R; Wieland, Kristopher A; Compaan, Alvin D; Liu, Xiangxin

    2015-08-01

    The performance of polycrystalline CdTe photovoltaic thin films is expected to depend on the grain boundary density and corresponding grain size of the film microstructure. However, the electrical performance of grain boundaries within these films is not well understood, and can be beneficial, harmful, or neutral in terms of film performance. Electron backscatter diffraction has been used to characterize the grain size, grain boundary structure, and crystallographic texture of sputtered CdTe at varying deposition pressures before and after CdCl2 treatment in order to correlate performance with microstructure. Weak fiber textures were observed in the as-deposited films, with (111) textures present at lower deposition pressures and (110) textures observed at higher deposition pressures. The CdCl2-treated samples exhibited significant grain recrystallization with a high fraction of twin boundaries. Good correlation of solar cell efficiency was observed with twin-corrected grain size while poor correlation was found if the twin boundaries were considered as grain boundaries in the grain size determination. This implies that the twin boundaries are neutral with respect to recombination and carrier transport. PMID:26077102

  9. Efficient Electrochemical Water Splitting Catalyzed by Electrodeposited Nickel Diselenide Nanoparticles Based Film.

    Science.gov (United States)

    Pu, Zonghua; Luo, Yonglan; Asiri, Abdullah M; Sun, Xuping

    2016-02-01

    In this contribution, we demonstrate that electrodeposited nickel diselenide nanoparticles based film on conductive Ti plate (NiSe2/Ti) is an efficient and robust electrode to catalyze both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in basic media. Electrochemical experiments show this electrode affords 10 mA cm(-2) at HER overpotential of 96 mV and 20 mA cm(-2) at OER overpotential of 295 mV with strong durability in 1.0 M KOH. The corresponding two-electrode alkaline water electrolyzer requires a cell voltage of only 1.66 V to achieve 10 mA cm(-2) water-splitting current. This development provides us an attractive non-noble-metal catalyst toward overall water splitting applications. PMID:26824878

  10. Etching of electrodeposited Cu2O films using ammonia solution for photovoltaic applications.

    Science.gov (United States)

    Zhu, Changqiong; Panzer, Matthew J

    2016-03-01

    Impurities at the surface of electrodeposited p-Cu2O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu2O homojunction photovoltaic devices incorporating etched p-Cu2O as the bottom layer is higher compared to devices with as-deposited p-Cu2O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu2O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values. PMID:26875697

  11. Creep Behavior and Its Influence on the Mechanics of Electrodeposited Nickel Films

    Institute of Scientific and Technical Information of China (English)

    Zengsheng Ma; Shiguo Long; Yong Pan; Yichun Zhou

    2009-01-01

    In order to improve the accuracy and comparability of hardness and elastic modulus measurements in nanoin-dentation, an evaluation of the creep behavior and its influence on the mechanical properties of the electrode-posited nickel film has been conducted. The influence of loading time and hold period on the hardness and elastic modulus results at maximum load 5000 μN has also been examined. It is found that with increasing the loading time, the creep value is decreased. However, the creep value is increased when the hold period is increased. The elastic modulus results are more reliable if the hold period is longer. If the hold period is long enough, the loading time has no remarkable effect on the hardness and elastic modulus measured.

  12. Analysis of Electrodeposited Nickel-Iron Alloy Film Composition Using Particle-Induced X-Ray Emission

    Directory of Open Access Journals (Sweden)

    Alyssa A. Frey

    2011-01-01

    Full Text Available The elemental composition of electrodeposited NiFe thin films was analyzed with particle-induced X-ray emission (PIXE. The thin films were electrodeposited on polycrystalline Au substrates from a 100 mM NiSO4, 10 mM FeSO4, 0.5 M H3BO3, and 1 M Na2SO4 solution. PIXE spectra of these films were analyzed to obtain relative amounts of Ni and Fe as a function of deposition potential and deposition time. The results show that PIXE can measure the total deposited metal in a sample over at least four orders of magnitude with similar fractional uncertainties. The technique is also sensitive enough to observe the variations in alloy composition due to sample nonuniformity or variations in deposition parameters.

  13. Epitaxial electrodeposition of ZnO thin film on GaN(0001) bulk single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Ichinose, Keigo; Yoshida, Tsukasa [Center of Innovative Photovoltaic Systems (CIPS), Environmental and Renewable Energy Systems (ERES) Division, Graduate School of Engineering, Gifu University (Japan)

    2008-10-15

    Ga terminated surface of heavily doped conductive GaN(0001) bulk single crystal was used as a rotating disk electrode (RDE) to electrodeposit ZnO thin film employing reduction of O{sub 2}. Although the native surface was rather inactive for the reduction of O{sub 2}, it was activated by dipping in HCl and further by prolonged electrolysis to reduce O{sub 2} in a Zn{sup 2+} free solution. Koutecky-Levich analysis revealed important kinetic constants, such as the standard charge transfer rate constant (k{sup 0}) of 2.4 x 10{sup -14} cm s{sup -1} and the transfer coefficient ({alpha}) of 0.11 at 70 C for the reduction of O{sub 2} at the most activated GaN(0001). Electrodeposition of ZnO from the bath containing ZnCl{sub 2} lead to an epitaxial growth of ZnO in a ZnO[100] parallel GaN[100] alignment as confirmed from the XRD {omega} scan with {theta} adjusted to ZnO(10 anti 12). The higher level of epitaxy was achieved for the more active surfaces of GaN as estimated from narrowing of the full width at half maximum (fwhm) of the peaks in the XRD {omega} -scan. Such films were also fully covering the surface of GaN as found in the SEM observation. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. One-step electrodeposition for targeted off-stoichiometry Cu2ZnSnS4 thin films

    Science.gov (United States)

    Tang, Aiyue; Liu, Jingjun; Ji, Jing; Dou, Meiling; Li, Zhilin; Wang, Feng

    2016-10-01

    Cu2ZnSnS4 (CZTS) is a promising quaternary compound suitable for absorber layer of thin film solar cells. The precise control of the atomic ratio of the films are difficult for the electrodeposition of CZTS thin films. Here, we reported targeted off-stoichiometry CZTS thin films synthesized by one-step electrodeposition. We obtained Cu-poor thin films and the chemical composition of the as-deposited thin films were tailored to targeted off-stoichiometry. Based on the different kinetics of the metallic ion reduction, we successfully controlled the chemical composition by varying deposition time. After annealing, pure kesterite structure was obtained and the electronic interactions between Cu and Sn was verified in the films, which contributes to high carrier mobility. The band gap of the thin films were in the range of 1.43-1.52 eV, which is suitable for absorber layers of thin film solar cells. The carrier mobility reached a value of 28.20 cm2/V s with carrier concentration of 2.09 × 1018 cm-3 when Cu/(Zn + Sn) and Zn/Sn ratios were 0.97 and 1.13, respectively. This work paves a way for synthesizing targeted off-stoichiometry compounds by controlling kinetics and reaction time in large scale.

  15. Highly Luminescent Hybrid SiO2-Coated CdTe Quantum Dots Retained Initial Photoluminescence Efficiency in Sol-Gel SiO2 Film.

    Science.gov (United States)

    Sun, Hongsheng; Xing, Yugui; Wu, Qinan; Yang, Ping

    2015-02-01

    A highly luminescent silica film was fabricated using tetraethyl orthosilicate (TEOS) and 3-aminopropyltrimethoxysilane (APS) through a controlled sol-gel reaction. The pre-hydrolysis of TEOS and APS which resulted in the mixture of TEOS and APS in a molecular level is a key for the formation of homogenous films. The aminopropyl groups in APS play an important role for obtaining homogeneous film with high photoluminescence (PL). Red-emitting hybrid SiO2-coated CdTe nano-crystals (NCs) were fabricated by a two-step synthesis including a thin SiO2 coating via a sol-gel process and a subsequent refluxing using green-emitting CdTe NCs. The hybrid SiO2-coated CdTe NCs were embedded in a functional SiO2 film via a two-step process including adding the NCs in SiO2 sol with a high viscosity and almost without ethanol and a subsequent spinning coating. The hybrid SiO2-coated CdTe NCs retained their initial PL efficiency (54%) in the film. Being encapsulated with the hybrid NCs in the film, no change on the absorption and PL spectra of red-emitting CdTe NCs (632 nm) was observed. This indicates the hybrid NCs is stable enough during preparation. This phenomenon is ascribed to the controlled sol-gel process and a hybrid SiO2 shell on CdTe NCs. Because these films exhibited high PL efficiency and stability, they will be utilizable for potential applications in many fields. PMID:26353691

  16. Innovative sputtering techniques for CIS and CdTe submodule fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, J.M.; Misra, M.S.; Lanning, B. (Martin Marietta Aerospace, Denver, CO (United States). Astronautics Group)

    1993-03-01

    This report describes work done during Phase 1 of the subject subcontract. The subcontract was designed to study innovative deposition techniques, such as the rotating cylindrical magnetron sputtering system and electrodeposition for large-area, low-cost copper indium diselenide (CIS) and cadmium telluride (CdTe) devices. A key issue for photovoltaics (PV) in terrestrial and future space applications is producibility, particularly for applications using a large quantity of PV. Among the concerns for fabrication of polycrystalline thin-film PV, such as CIS and CdTe, are production volume, cost, and minimization of waste. Both rotating cylindrical magnetron (C-Mag[trademark]) sputtering and electrodeposition have tremendous potential for the fabrication of polycrystalline thin-film PV due to scaleability, efficient utilization of source materials, and inherently higher deposition rates. In the case of sputtering, the unique geometry of the C-Mae facilitates innovative cosputtering and reactive sputtering that could lead to greater throughput reduced health and safety risks, and, ultimately, lower fabrication cost. Electrodeposited films appear to be adherent and comparable with low-cost fabrication techniques. Phase I involved the initial film and device fabrication using the two techniques mentioned herein. Devices were tested by both internal facilities, as well as NREL and ISET.

  17. Electrochemical characterization of ion selectivity in electrodeposited nickel hexacyanoferrate thin films

    Institute of Scientific and Technical Information of China (English)

    Jinxia Guo; Xiaogang Hao; Xuli Ma; Zhonglin Zhang; Shibin Liu

    2008-01-01

    The ion selectivity of electrodeposited nickel hexacyanoferrate (NiHCF) thin films was investigated using electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). NiHCF thin films were prepared by cathodic deposition on Pt and AI substrates. EIS and CV curves were determined in 1 mol/L (KNO3+CsNO3) and 1 mol/L (NaNO3+CsNO3) mixture solutions, which were sensitive to the concentration of Cs+ in the electrolytes. Experimental results show that all Nyqnist impedance plots show de-pressed semicircles in the high-frequency range changing over into straight lines at lower frequencies. With increasing amounts of Cs+, the redox potentials in CV curves shift toward more positive values and the redox peaks broaden; the semicircle radius in corre-sponding EIS curves and the charge transfer resistance also increase. EIS combining CV is able to provide valuable insights into the ion selectivity of NiHCF thin films.

  18. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    Energy Technology Data Exchange (ETDEWEB)

    Crisp, Ryan W. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Callahan, Rebecca [National Renewable Energy Lab. (NREL), Golden, CO (United States); Reid, Obadiah G. [Univ. of Colorado, Boulder, CO (United States); Dolzhnikov, Dmitriy S. [Univ. of Chicago, IL (United States); Talapin, Dmitri V. [Univ. of Chicago, IL (United States); Rumbles, Garry [National Renewable Energy Lab. (NREL), Golden, CO (United States); Luther, Joseph M. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Kopidakis, Nikos [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  19. Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

    International Nuclear Information System (INIS)

    This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

  20. Electrical and magnetic properties of electrodeposited nickel incorporated diamond-like carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, B., E-mail: pandey.beauty@yahoo.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Das, D. [UGC-DAE CSR, Sector III/LB-8, Bidhan Nagar, Kolkata 700098 (India); Kar, A.K. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India)

    2015-05-15

    Highlights: • Electrical and magnetic properties of DLC and Ni-DLC thin films are studied. • The ohmicity and conductivity of DLC films rise with nickel addition. • The ohmicity of Ni-DLC is enhanced with increase in dilution of electrolyte. • Dielectric loss is high for Ni-DLC and decreases with frequency till 100 kHz. • (m–H) and (m–T) curves of Ni-DLC indicate superparamagnetic behavior. - Abstract: Nanocomposite diamond-like carbon (DLC) thin films have been synthesized by incorporating nickel (Ni) nanoparticles in DLC matrix with varying concentration of nickel. DLC and Ni-DLC thin films have been deposited on ITO coated glass substrates employing low voltage electrodeposition method. Electrical properties of the samples were studied by measuring current–voltage characteristics and dielectric properties. The current approaches toward an ohmic behavior with metal addition. This tendency of increasing ohmicity is enhanced with increase in dilution of the electrolyte. The conductivity increases with Ni addition and interestingly it continues to increase with dilution of Ni concentration in the electrolyte in the range of our study. Magnetic properties for DLC and Ni-DLC thin film samples were examined by electron paramagnetic resonance (EPR) measurements and Super Conducting Quantum Interference Device (SQUID) measurements. g-Value for DLC is 2.074, whereas it decreases to 2.055 with Ni addition in the electrolyte. This decrement arises from the increased sp{sup 2} content in DLC matrix. The magnetic moment vs. magnetic field (m–H) curves of Ni-DLC indicate superparamagnetic behavior which may be due to ferromagnetic contribution from the incorporated nickel nanoparticles in the DLC matrix. The ZFC curve of Ni-DLC after the blocking temperature shows a combined contribution of ferromagnetic, superparamagnetic and paramagnetic nature of the materials persisting up to 300 K.

  1. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Directory of Open Access Journals (Sweden)

    Simelys Hernández

    2016-04-01

    Full Text Available Manganese oxides (MnOx, being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs. This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water. To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  2. M(o)ssbauer study of the field induced uniaxial anisotropy in electro-deposited FeCo alloy films

    Institute of Scientific and Technical Information of China (English)

    Li Zhi-Wei; Yang Xu; Wang Hai-Bo; Liu Xin; Li Fa-Shen

    2009-01-01

    Thin ferromagnetic films with in-plane magnetic anisotropy are promising materials for obtaining high microwave permeability. The paper reports a M(o)ssbauer study of the field induced in-plane uniaxial anisotropy in electro-deposited FeCo alloy films. The FeCo alloy films were prepared by the electro-deposition method with and without an external magnetic field applied parallel to the film plane during deposition, Vibrating sample magnetometry and M(o)ssbauer spectroscopy measurements at room temperature indicate that the film deposited in external field shows an in-plane uniaxial anisotropy with an easy direction coinciding with the external field direction and a hard direction perpendicular to the field direction, whereas the film deposited without external field does not show any in-plane anisotropy. M(o)ssbauer spectra taken in three geometric arrangements show that the magnetic moments are almost constrained in the film plane for the film deposited with applied magnetic field. Also, the magnetic moments tend to align in the direction of the applied external magnetic field during deposition, indicating that the observed anisotropy should be attributed to directional ordering of atomic pairs.

  3. [Spectral analyzing effects of atmosphere states on the structure and characteristics of CdTe polycrystalline thin films made by close-spaced sublimation].

    Science.gov (United States)

    Zheng, Hua-jing; Zheng, Jia-gui; Feng, Liang-huan; Zhang, Jing-quan; Xie, Er-qing

    2005-07-01

    The structure and characteristics of CdTe thin films are dependent on the working atmosphere states in close-spaced sublimation. In the present paper, CdTe polycrystalline thin films were deposited by CSS in mixture atmosphere of argon and oxygen. The physical mechanism of CSS was analyzed, and the temperature distribution in CSS system was measured. The dependence of preliminary nucleus creation on the atmosphere states (involving component and pressure) was studied. Transparencies were measured and optic energy gaps were calculated. The results show that: (1) The CdTe films deposited in different atmospheres are cubic structure. With increasing oxygen concentration, a increases and reaches the maximum at 6% oxygen concentration, then reduces, and increases again after passing the point at 12% oxygen concentration. Among them, the sample depositing at 9% oxygen concentration is the best. The optic energy gaps are 1.50-1.51 eV for all CdTe films. (2) The samples depositing at different pressures at 9% oxygen concentration are all cubical structure of CdTe, and the diffraction peaks of CdS and SnO2:F still appear. With the gas pressure increasing, the crystal size of CdTe minishes, the transparency of the thin film goes down, and the absorption side shifts to the short-wave direction. (3) The polycrystalline thin films with high quality deposit in 4 minutes under the depositing condition that the substrate temperature is 550 degrees C, and source temperature is 620 degrees C at 9% oxygen concentration. PMID:16241058

  4. Orientation of CdTe epitaxial films on GaAs(100) grown by vacuum evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Houng Mauphon; Fu Shenli; Jenq Fenqlin (Dept. of Electrical Engineering, National Cheng-Kung Univ., Tainan (Taiwan)); Chen Jiannruey (Dept. of Materials Science and Engineering, National Tsing Hua Univ., Hsinchu (Taiwan))

    1991-08-15

    The growth of (100)- and (111)-oriented CdTe epitaxial layers on (100)-oriented GaAs substrates were investigated. Ar{sup +} plasma bombardment was used to remove the surface oxide layer, while preheating the substrate before evaporation was performed to deplete arsenic on the GaAs substrate surface. Results indicate that the CdTe(100) will grow on GaAs(100) with an oxide layer remaining on the surface. For the GaAs(100) substrate with the oxide layer removed by plasma bombardment, CdTe(100) will grow on the arsenic-depleted GaAs substrate, while CdTe(111) will grow on the GaAs substrate without arsenic depletion. A model is proposed that a tellurium-rich surface is formed on the arsenic-depleted GaAs surface through Ga-Te bonding on which the CdTe(100) will grow, whereas CdTe(111) will grow on a tellurium-poor surface. The photoluminescence investigation conforms to our proposed model. (orig.).

  5. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Science.gov (United States)

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  6. Effective Ag doping by He-Ne laser exposure to improve the electrical and the optical properties of CdTe thin films for heterostructured thin film solar cells

    International Nuclear Information System (INIS)

    The cadmium telluride (CdTe) thin film solar cell is one of the strongest candidates due to the optimum band gap energy (about 1.4 eV) for solar energy absorption, high light absorption capability and lower cost requirements for solar cell production. However, the maximum efficiency of a CdTe thin film solar cell still remains just 16.5% despite its excellent absorption coefficient; i.e., the electrical properties of CdTe thin film, including the resistivity, must be improved to enhance the energy conversion efficiency. Silver (Ag) was doped by using helium-neon (He-Ne) laser (632.8 nm) exposure into sputtering-deposited p-type CdTe thin films. The resistivity of the Ag-doped CdTe thin films was reduced from 2.97 x 104 Ω-cm to the order of 5.16 x 10'-'2 Ω-cm. The carrier concentration of CdTe thin films had increased to 1.6 x 1018 cm-3 after a 15-minute exposure to the He-Ne laser. The average absorbance value of CdTe thin films was improved from 1.81 to 3.01 by the doping of Ag due to impurity-scattering. These improved properties should contribute to the efficiency of the photovoltaic effect of the photogenerated charged carriers. The methodology in this study is very simple and effective to dope a multilayered thin film solar cell with a relatively short process time, no wet-process, and selective treatment.

  7. Corrosion resistance and long-term durability of super-hydrophobic nickel film prepared by electrodeposition process

    International Nuclear Information System (INIS)

    A super-hydrophobic nickel film with micro-nano structure was successfully fabricated by electrodeposition process. By controlling electrodeposition parameters and considering different storage times for the coatings in air, various nickel films with different wettability were fabricated. Surface morphology of nickel films was examined by means of scanning electron microscopy (SEM). The results showed that the micro-nano nickel film was well-crystallized and exhibited pine cone-like microstructure with nano-cone arrays randomly dispersed on each micro-protrusion. The wettability of the micro-nano nickel film varied from super-hydrophilicity (water contact angle 5.3°) to super-hydrophobicity (water contact angle 155.7°) by exposing the surface in air at room temperature. The corrosion resistance of the super-hydrophobic film was estimated by electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The potentiodynamic curves revealed that the corrosion rate of superhydrophobic surface was only 0.16% of the bare copper substrate. Moreover, EIS measurements and appropriate equivalent circuit models revealed that the corrosion resistance of nickel films considerably improved with an increase in the hydrophobicity. The superhydrophobic surface also exhibited an excellent long-term durability in neutral 3.5 wt.% NaCl solution.

  8. Corrosion resistance and long-term durability of super-hydrophobic nickel film prepared by electrodeposition process

    Energy Technology Data Exchange (ETDEWEB)

    Khorsand, S., E-mail: s.khorsand@ma.iut.ac.ir; Raeissi, K., E-mail: k_raeissi@cc.iut.ac.ir; Ashrafizadeh, F., E-mail: ashrafif@cc.iut.ac.ir

    2014-06-01

    A super-hydrophobic nickel film with micro-nano structure was successfully fabricated by electrodeposition process. By controlling electrodeposition parameters and considering different storage times for the coatings in air, various nickel films with different wettability were fabricated. Surface morphology of nickel films was examined by means of scanning electron microscopy (SEM). The results showed that the micro-nano nickel film was well-crystallized and exhibited pine cone-like microstructure with nano-cone arrays randomly dispersed on each micro-protrusion. The wettability of the micro-nano nickel film varied from super-hydrophilicity (water contact angle 5.3°) to super-hydrophobicity (water contact angle 155.7°) by exposing the surface in air at room temperature. The corrosion resistance of the super-hydrophobic film was estimated by electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The potentiodynamic curves revealed that the corrosion rate of superhydrophobic surface was only 0.16% of the bare copper substrate. Moreover, EIS measurements and appropriate equivalent circuit models revealed that the corrosion resistance of nickel films considerably improved with an increase in the hydrophobicity. The superhydrophobic surface also exhibited an excellent long-term durability in neutral 3.5 wt.% NaCl solution.

  9. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Science.gov (United States)

    Khalil, M. I.; Atici, O.; Lucotti, A.; Binetti, S.; Le Donne, A.; Magagnin, L.

    2016-08-01

    In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures.

  10. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  11. Synthesis and tribological behaviors of diamond-like carbon films by electrodeposition from solution of acetonitrile and water

    International Nuclear Information System (INIS)

    Diamond-like carbon (DLC) films were prepared on silicon substrates by liquid phase electrodeposition from a mixture of acetonitrile and deionized water. The deposition voltage was clearly reduced owing to the presence of deionized water in the electrolyte by changing the basic properties (dielectric constant and dipole moment) of the electrolyte. Raman spectra reveal that the ratio of sp3/sp2 in the DLC films is related to the concentration of acetonitrile. The surface roughness and grain morphology determined by atomic force microscopy are also influenced by the concentration of the acetonitrile. The UMT-2 universal micro-tribometer was used to test the friction properties of the DLC films obtained from electrolytes with different concentration. The results convey that the DLC film prepared from the electrolyte containing 10 vol.% acetonitrile has the better surface morphology and friction behavior comparing with the other. In addition the growth mechanism of the film was also discussed

  12. Preparation and characterization of Cu(In,Ga)(Se,S){sub 2} thin films from electrodeposited precursors for hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Leisch, Jennifer E.; Bhattacharya, Raghu N.; Teeter, Glenn; Turner, John A. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393 (United States)

    2004-02-06

    Semiconducting Cu(In,Ga)(Se,S){sub 2} thin films were made from electrodeposited Cu(In,Ga)Se{sub 2} precursors, followed by physical vapor deposition of In{sub 2}S{sub 3}, Ga, and Se. The bandgaps of these materials were found to be between 1.6 and 2.0eV, which spans the optimal bandgap necessary for application for the top junction in photovoltaic multijunction devices and for unassisted water photolysis. These films were characterized by electron-probe microanalysis, scanning Auger spectroscopy, X-ray diffraction, and photocurrent spectroscopy.

  13. Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS=CdTe Heterojunction Devices

    Science.gov (United States)

    Bayhan, Habibe; Erçelebý, Çiðdem

    1998-05-01

    CdTe, CdS thin films and n-CdS/p-CdTe heterostructures have been prepared by conventional vacuum evaporation technique. Some post deposition treatments to optimize the device efficiency have been analyzed and the effects of the individual process steps on the material and device properties were investigated. Annealing in air with and without CdCl2-treatment decreased the CdTe resistivity. The CdCl2-dip followed by annealing in air at 300°C for 5 min improved the grain size and polycrystalline nature of CdTe thin films. Solar efficiency improvements were achieved when heterojunctions were prepared on successively treated (i.e. etched, air annealed, CdCl2-processed) CdTe surfaces. Etching of the CdTe surface with potassium dichromate solution prior to metal contact deposition lead to the formation of low-resistance Au contacts and increase in open circuit voltage and fill factor values.

  14. Rf sputtering of CdTE and CdS for thin film PV

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.D.; Tabory, C.N.; Shao, M.; Fischer, A.; Feng, Z.; Bohn, R.G. (Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States))

    1994-06-30

    In late 1992 we demonstrated the first rf sputtered CdS/CdTe photovoltaic cell with efficiency exceeding 10%. In this cell both CdS and CdTe layers were deposited by rf sputtering. In this paper we report preliminary measurements of (1) optical emission spectroscopy of the rf plasma, (2) the width of the phonon Raman line as a function of deposition temperature for CdS, and (3) studies of oxygen doping during pulsed laser deposition of CdTe.

  15. Thin-film CdTe detector for microdosimetric study of radiation dose enhancement at gold-tissue interface.

    Science.gov (United States)

    Paudel, Nava Raj; Shvydka, Diana; Parsai, E Ishmael

    2016-01-01

    Presence of interfaces between high and low atomic number (Z) materials, often encountered in diagnostic imaging and radiation therapy, leads to radiation dose perturbation. It is characterized by a very narrow region of sharp dose enhancement at the interface. A rapid falloff of dose enhancement over a very short distance from the interface makes the experimental dosimetry nontrivial. We use an in-house-built inexpensive thin-film Cadmium Telluride (CdTe) photodetector to study this effect at the gold-tissue interface and verify our experimental results with Monte Carlo (MC) modeling. Three-micron thick thin-film CdTe photodetectors were fabricated in our lab. One-, ten- or one hundred-micron thick gold foils placed in a tissue-equivalent-phantom were irradiated with a clinical Ir-192 high-dose-rate (HDR) source and current measured with a CdTe detector in each case was compared with the current measured for all uniform tissue-equivalent phantom. Percentage signal enhancement (PSE) due to each gold foil was then compared against MC modeled percentage dose enhancement (PDE), obtained from the geometry mimicking the experimental setup. The experimental PSEs due to 1, 10, and 100 μm thick gold foils at the closest measured distance of 12.5μm from the interface were 42.6 ± 10.8 , 137.0 ± 11.9, and 203.0 ± 15.4, respectively. The corresponding MC modeled PDEs were 38.1 ± 1, 164 ± 1, and 249 ± 1, respectively. The experimental and MC modeled values showed a closer agreement at the larger distances from the interface. The dose enhancement in the vicinity of gold-tissue interface was successfully measured using an in-house-built, high-resolution CdTe-based photodetector and validated with MC simulations. A close agreement between experimental and the MC modeled results shows that CdTe detector can be utilized for mapping interface dose distribution encountered in the application of ionizing radiation. PMID:27685139

  16. Exploring sulfur solubility in ionic liquids for the electrodeposition of sulfide films with their electrochemical reactivity toward lithium

    International Nuclear Information System (INIS)

    Metal binary sulfides (TiS2, FeS2), in either powder or thin film forms, were the first studied Li insertion electrodes for rechargeable lithium batteries, with thin films made mainly by sputtering. Here we exploit the equilibrium solubility of molecular sulfur into ionic liquids at its melting point (120 °C), which we estimated to be at a maximum level of 80 mM by both electrochemical and microwave studies, to prepare thin films of both Co9S8 and FeSx showing initial capacities of 559 mAh g−1 and 708 mAh g−1 versus lithium in coin cells, respectively. We demonstrate that the growth of Co9S8 films involves the reaction of soluble sulfur with the electrodeposited Co metallic layer, while the formation of FeSx films enlists a precipitation between the reduced Fe(II) cations and the electrochemically produced Sxy− species in the ionic liquid bath. Such findings, namely the solubility of sulfur into ionic liquids, open opportunities to electrodeposit sulfur-based compounds as well as capture sulfur from various media enabling a better environment

  17. The influence of electrochemical pre-treatment of B-doped diamond films on the electrodeposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Mauro C.; Silva, Leide G. da; Sumodjo, Paulo T.A. [Sao Paulo Univ., SP (Brazil). Inst. de Quimica]. E-mail: ptasumod@iq.usp.br

    2006-08-15

    The influence of the substrate electrochemical pre-treatment in 0.5 mol L{sup -1} H{sub 2}SO{sub 4} on the Pt electrodeposition on boron-doped diamond, BDD, film electrodes was investigated. Platinum cannot be electrodeposited on a freshly prepared BDD electrode; however, potentiodynamic cycling or anodic potential steps at short times does activate the electrode. Anodic pre-treatment plays a dual role in the behavior of Pt deposition on BDD surfaces: Pt deposition is increased at short-term anodic pre-treatments, whereas at longer pre-treatment times Pt deposition was inhibited. These facts are explained in terms of wettability changes and passivation of the surface. Conversely, the oxide layer formed in these treatments increases the dispersion level of the catalyst. (author)

  18. Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In2S3 Films for Solar Applications Using the Taguchi Method

    Directory of Open Access Journals (Sweden)

    Maqsood Ali Mughal

    2014-01-01

    Full Text Available Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3 films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3 films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2 obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27 (3^4 design of experiments (DOE. Approximately 600 nm thick In2S3 films were electrodeposited from an organic bath (ethylene glycol-based containing indium chloride (InCl3, sodium chloride (NaCl, and sodium thiosulfate (Na2S2O3·5H2O, the latter used as an additional sulfur source along with elemental sulfur (S. An X-ray diffractometer (XRD, energy dispersive X-ray spectroscopy (EDS unit, and scanning electron microscope (SEM were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3 films.

  19. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  20. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  1. A Comparative Study on the Optical Properties of Multilayer CdSe / CdTe Thin Film with Single Layer CdTe and CdSe Films

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2013-07-01

    Full Text Available CdTe and CdSe single layer thin films and CdSe / CdTe multilayer (ML thin film were prepared by using physical vapour deposition method. Optical properties of CdSe / CdTe multilayer thin film shows different behavior due to type II band structure alignment. Energy band gap value of CdSe / CdTe ML thin film is shifted to higher value than that of single layer CdTe film. This is due to decrease in crystallite size to dimension smaller than the Bohr exciton radius of CdTe (14 nm. Crystallite size of the multilayer sample was calculated with the predictions of the effective mass approximation model (i.e., Brus model. It is observed that the photoluminescence peak of CdSe / CdTe ML thin film is red shifted compared to the peaks corresponding to individual CdSe and CdTe thin films. This may be due to the presence of type II quantum dot formation in the CdSe / CdTe heterostructure multilayer thin film.

  2. Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS=CdTe Heterojunction Devices

    OpenAIRE

    BAYHAN, Habibe; ERÇELEBİ, Çiğdem

    1998-01-01

    CdTe, CdS thin films and n-CdS/p-CdTe heterostructures have been prepared by conventional vacuum evaporation technique. Some post deposition treatments to optimize the device efficiency have been analyzed and the effects of the individual process steps on the material and device properties were investigated. Annealing in air with and without CdCl2-treatment decreased the CdTe resistivity. The CdCl2-dip followed by annealing in air at 300\\circC for 5 min improved the grain size and polycrystal...

  3. Chemical and microstructural study in radio frequency sputtered CdTe oxide films prepared at different N{sub 2}O pressures. Oxygen incorporation and film resputtering

    Energy Technology Data Exchange (ETDEWEB)

    Caballero-Briones, F. [CICATA-IPN Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600, Altamira, Tamps (Mexico)], E-mail: fcaballerobriones@ub.edu; Oliva, A.I.; Bartolo-Perez, P. [Applied Physics Department, CINVESTAV-IPN Unidad Merida, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico); Zapata-Navarro, A. [CICATA-IPN Unidad Legaria, Legaria 694 Col. Irrigacion 11500, Mexico, D.F. (Mexico); Pena, J.L. [Applied Physics Department, CINVESTAV-IPN Unidad Merida, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2008-10-01

    CdTe oxide films were grown by radio frequency sputtering in Ar-N{sub 2}O plasma at different N{sub 2}O partial pressures. The film oxygen content determined by Auger electron spectroscopy ranged from 15 to 60 at.%. The free O{sub 2} production during film deposition was monitored by in situ mass spectroscopy and it was found that it increases linearly over a critical N{sub 2}O pressure {approx} 4.7 x 10{sup -3} Pa alike the oxygen in the films. Film microstructure was studied by Raman spectroscopy and atomic force microscopy. Evidence of bands related to terminal Te-O vibrations was found in films prepared below the N{sub 2}O critical pressure, becoming predominant in films with higher oxygen content. The morphology and roughness evolution of the films confirm that they consist of a mixture of phases. Surface structures of the Ia-type and of the Ib-type were observed below and above the critical N{sub 2}O pressure. Eventually, ion bombardment process caused film resputtering.

  4. Chemical and microstructural study in radio frequency sputtered CdTe oxide films prepared at different N2O pressures. Oxygen incorporation and film resputtering

    International Nuclear Information System (INIS)

    CdTe oxide films were grown by radio frequency sputtering in Ar-N2O plasma at different N2O partial pressures. The film oxygen content determined by Auger electron spectroscopy ranged from 15 to 60 at.%. The free O2 production during film deposition was monitored by in situ mass spectroscopy and it was found that it increases linearly over a critical N2O pressure ∼ 4.7 x 10-3 Pa alike the oxygen in the films. Film microstructure was studied by Raman spectroscopy and atomic force microscopy. Evidence of bands related to terminal Te-O vibrations was found in films prepared below the N2O critical pressure, becoming predominant in films with higher oxygen content. The morphology and roughness evolution of the films confirm that they consist of a mixture of phases. Surface structures of the Ia-type and of the Ib-type were observed below and above the critical N2O pressure. Eventually, ion bombardment process caused film resputtering

  5. Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

    Institute of Scientific and Technical Information of China (English)

    WANG Yanlai; NIE Hongbo; GUO Shiju

    2010-01-01

    The CuInSe2 compound was prepared by selenization of Cu-In precursor,which was ultrasonic electrodeposited at constant current.CuInSe2films were compacted to improve surface morphology.The films were characterized by X-ray diffractometry(XRD),scanning electron microscopy(SEM),and energy dispersive spectroscopy(EDS).It is indicated that ideal stoichiometric CuInSe2 films can be obtained by the selanization of Cu-In precursor deposited at a current density of 20 mA/cm2.Single-phase CuInSe2 is formed in the selenization process,and it exhibits preferred orientation along the(112)plane.The CuInSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60℃.

  6. Size dependent electron transfer from CdTe quantum dots linked to TiO2 thin films in quantum dot sensitized solar cells

    International Nuclear Information System (INIS)

    In this present study, we demonstrate the size dependent charge transfer from CdTe quantum dots (QDs) into TiO2 substrate and relate this charge transfer to the actual behavior of a CdTe sensitized solar cell. CdTe QDs was synthesized using mercaptopropionic acid as the capping agent. The conduction band offset for TiO2 and CdTe QDs indicates thermodynamically favorable band edge positions for smaller QDs for the electron-transfer at the QD–TiO2 interface. Time-resolved emission studies were carried out for CdTe QD on glass and CdTe QD on TiO2 substrates. Results on the quenching of QD luminescence, which relates to the transfer kinetics of electrons from the QD to the TiO2 film, showed that at the smaller QD sizes the transfer kinetics are much more rapid than at the larger sizes. I–V characteristics of quantum dot sensitized solar cells (QDSSC) with different sized QDs were also investigated indicating higher current densities at smaller QD sizes consistent with the charge transfer results. The maximum injection rate constant and photocurrent were obtained for 2.5 nm CdTe QDs. We have been able to construct a solar cell with reasonable characteristics (Voc = 0.8 V, Jsc = 1 mA cm−2, FF = 60%, η = 0.5%). - Highlights: • Size dependant charge transfer from quantum dots to TiO2. • Smaller quantum dot sizes promote higher current densities in solar cell. • Smaller quantum dots have favorable band edge positions and transport kinetics

  7. Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

    Science.gov (United States)

    Huang, Ruomeng; Kissling, Gabriela P.; Jolleys, Andrew; Bartlett, Philip N.; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. `Kees'

    2015-11-01

    We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

  8. Influence of secondary phases during annealing on re-crystallization of CuInSe{sub 2} electrodeposited films

    Energy Technology Data Exchange (ETDEWEB)

    Gobeaut, A. [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Laffont, L., E-mail: lydia.laffont@u-picardie.f [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Tarascon, J.-M. [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Parissi, L.; Kerrec, O. [Institut de Recherche et de Developpement de l' Energie Photovoltaique, 6 quai Watier, 78401 Chatou cedex (France)

    2009-06-01

    Electrodeposited CuInSe{sub 2} thin films are of potential importance, as light absorber material, in the next generation of photovoltaic cells as long as we can optimize their annealing process to obtain dense and highly crystalline films. The intent of this study was to gain a basic understanding of the key experimental parameters governing the structural-textural-composition evolution of thin films as function of the annealing temperature via X-ray diffraction, scanning/transmission electron microscopy and thermal analysis measurements. The crystallization of the electrodeposited CuInSe{sub 2} films, with the presence of Se and orthorhombic Cu{sub 2} {sub -} {sub x}Se (o-Cu{sub 2} {sub -} {sub x}Se) phases, occurs over two distinct temperature ranges, between 220 {sup o}C and 250 {sup o}C and beyond 520 {sup o}C. Such domains of temperature are consistent with the melting of elemental Se and the binary CuSe phase, respectively. The CuSe phase forming during annealing results from the reaction between the two secondary species o-Cu{sub 2} {sub -} {sub x}Se and Se (o-Cu{sub 2} {sub -} {sub x}Se + Se {yields} 2 CuSe) but can be decomposed into the cubic {beta}-Cu{sub 2} {sub -} {sub x}Se phase by slowing down the heating rate. Formation of liquid CuSe beyond 520{sup o}C seems to govern both the grain size of the films and the porosity of the substrate-CuInSe{sub 2} film interface. A simple model explaining the competitive interplay between the film crystallinity and the interface porosity is proposed, aiming at an improved protocol based on temperature range, which will enable to enhance the film crystalline nature while limiting the interface porosity.

  9. Influence of post-deposition heat treatment on optical properties derived from UV–vis of cadmium telluride (CdTe) thin films deposited on amorphous substrate

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Annealing-induced change in optical parameters of CdTe film was derived from UV–vis study. • Optical constants of the films were evaluated using Swanepoel method. • Dispersion energy data obeyed the single oscillator of the Wemple−Didomenico model. • Cd deficiency of the film confirmed the p-type conductive nature. - Abstract: In this work, we report on post-deposition heat treatment (annealing)-induced change in optical properties derived from UV–vis study of CdTe thin films prepared on amorphous glass substrate by electron beam evaporation technique. Annealing effect gives rise to the enhancement in crystalline nature (zinc blende structure) of CdTe films with (1 1 1) preferred orientation. The average transmittance was increased with the annealing temperature and the slight shift in transmission threshold towards higher wavelength region revealed the systematic reduction in optical energy band gap. The existence of shallow level just below the conduction band, within the band gap was identified in the range of 0.23 and 0.14 eV for the films annealed at 200 and 450 °C, respectively. The optical quality of deposited films was confirmed by the photoluminescence study. In addition, the scanning electron microscopic measurement supports the result of X-ray diffraction study. The Swanepoel, Hervé-Vandamme, and Wemple−DiDomenico models have been employed to evaluate the various optical parameters of CdTe films. These results are correlated well with other physical properties and discussed with the possible concepts underlying the phenomena

  10. Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

    2009-05-01

    Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

  11. Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A. [Physics Department, Faculty of Science, Helwan University, Helwan, Cairo (Egypt)

    2005-08-01

    The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E{sub 1} {approx}1.55 eV (fundamental gap) and E{sub 2}{approx}2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness {>=}300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rohatgi, A.; Ringel, S.A.; Sudharsanan, R. (School of Electrical Engineering, Georgia Inst. of Tech., Atlanta, GA (USA)); Meyers, P.V.; Liu, C.H.; Ramanthan, V. (Ametek Applied Materials Lab., Harleysville, PA (USA))

    1989-10-15

    Polycrystalline thin films of CdZnTe and CdMnTe have been grown by molecular beam epitaxy and metal-organic chemical vapor deposition, respectively, on CdS/SnO{sub 2}/glass substrates, with bandgaps of 1.65-1.75 eV for the top of a two-cell tandem design. P-i-n cells were fabricated and tested using Ni/p{sup +}-ZnTe as a back contact to the ternary films. CdTe cells were also fabricated using both growth techniques, which resulted in 9-10% efficiency and provided a baseline for ternary cell development. It was found that standard CdTe processing (400deg C air annealing) reduces the ternary bandgaps from about 1.7 to about 1.55 eV, resulting in significantly reduced subgap transmission with cell efficiencies of 3-4%. Optimum air-annealing conditions were determined to retain the 1.7 eV bandgaps; however, the cell performance was still limited by both poor CdZnTe/CdS interface quality and high series resistance. The junction interface was found to improve by annealing in the presence of hydrogen, which resulted in V{sub oc} values from 0.500 V to as high as 0.65 V, but the cell performance became increasingly limited by series resistance. The effects of cell processing on the properties of the CdZnTe/CdS interface, the bulk CdZnTe film, and the back-contact region have been investigated to provide guidelines for achieving high efficiency in widegap ternary cells. (orig.).

  13. Raman investigation on thin and thick CdTe films obtained by close spaced vacuum sublimation technique

    International Nuclear Information System (INIS)

    The CdTe thin and thick films were obtained by the close spaced vacuum sublimation technique on a glass substrate under the following growth conditions: the evaporator temperature was 620 C; and the substrate temperature was varied in the range from 250 C to 550 C. High purity CdTe powder was used as a charge for evaporation. The Raman spectra were measured using TRIAX 320 and TRIAX 550 spectrometers at room temperature. The 488-nm line and 514.5-nm line of an Ar+ laser and a 785-nm diode laser were used as excitation sources. The signal was collected by the liquid nitrogen cooled charge-coupled-device (CCD) detector. A number of intense Raman peaks at 140, 167, 190, 271, 332 and 493 cm-1 were observed and were interpreted as TO (140 cm-1), 1LO (167 cm-1), 2LO (332 cm-1), 3LO (493 cm-1) phonon modes and plasmon-phonon mode (190 cm-1). The presence of several phonon replicas in the Raman spectra confirms high crystal quality of the samples. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, O., E-mail: oscar@fmc.uva.es [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Hortelano, V.; Jimenez, J. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Plaza, J.L.; Dios, S. de; Olvera, J.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Fath, R.; Lozano, J.G.; Ben, T.; Gonzalez, D. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica y Q.I., Facultad de Ciencias, Apdo. 40, 11510 Puerto Real, Cadiz (Spain); Mass, J. [Dpto. de Fisica, Universidad del Norte, Km.5 Via Puerto Colombia, Barranquilla (Colombia)

    2011-04-28

    Research highlights: > ZnO nanowires grown from thermal Zn oxidation. > TEM reveals high quality thin nanowires several microns long. > New phase formation at long oxidation time. > Good spectroscopic properties measured by Raman, Photo and Cathodoluminsecence spectroscopies. - Abstract: <112-bar 0> wurtzite ZnO nanowires (NWs) have been obtained by oxidizing in air at 500 deg. C thermally evaporated Zn metal films deposited onto CdTe substrates. The presence of Cd atoms from the substrate on the ZnO seeding layer and NWs seems to affect the growth of the NWs. The effects of the oxidation time on the structural and optical properties of the NWs are described in detail. It is shown that the NWs density decreases and their length increases when increasing the oxidation time. Thicker Zn layers result in thinner and longer ZnO NWs. Very long oxidation times also lead to the formation of a new CdO phase which is related to the partial destruction and quality reduction of the NWs. The possible process for ZnO NW formation on CdTe substrates is discussed.

  15. Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

    Directory of Open Access Journals (Sweden)

    TSUNG-WEI CHANG

    2014-02-01

    Full Text Available In this study, copper indium selenide (CIS films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM, X-ray Diffraction (XRD, and Raman spectra.

  16. Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film.

    Science.gov (United States)

    Tsin, Fabien; Thomere, Angélica; Bris, Arthur Le; Collin, Stéphane; Lincot, Daniel; Rousset, Jean

    2016-05-18

    Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film. PMID:27111517

  17. Effect of different nickel precursors on capacitive behavior of electrodeposited NiO thin films

    Science.gov (United States)

    Kore, R. M.; Ghadge, T. S.; Ambare, R. C.; Lokhande, B. J.

    2016-04-01

    In the present study, the effect of nickel precursors containing different anions like nitrate, chloride and sulphate on the morphology and pseudocapacitance behavior of NiO is investigated. The NiO samples were prepared by using a potentiondynamic electrodeposition technique in the three electrode cell. Cyclic voltammetry technique was exploited for potentiodynamic deposition of the films. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), etc. The XRD reveals the cubic crystal structure for all samples. The SEM micrograph shows nanoflakelike, up grown nanoflakes and honeycomb like nanostructured morphologies for nitrate, chloride and sulphate precursors respectively. The capacitive behavior of these samples was recorded using cyclic voltammetry (CV), charge-discharge and electrochemical impedance spectroscopy (EIS) in 1 M KOH electrolyte. The specific capacitance values of NiO samples obtained using CV for nitrate, chloride and sulphate precursors were 136, 214 and 893 Fg-1 respectively, at the scan rate of 5 mVs-1. The charge discharge study shows high specific energy for the sample obtained from sulphate (23.98 Whkg-1) as compared to chloride (9.67 Whkg-1) and nitrate (4.9 Whkg-1), whereas samples of cholride (13.9 kWkg-1 and nitrate (10.5 kWkg-1) shows comparatively more specific power than samples obtained from sulphate (7.6 kWkg-1). The equivalent series resistance of NiO samples observed from EIS study are 1.34, 1.29 and 1.27 Ω respectively for nitrate, chloride and sulphate precursors. These results emphasizes that the samples obtained from sulphate precursors provides very low impedance through honeycomb like nanostructured morphology which supports good capacitive behavior of NiO.

  18. Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2 buffer layers

    Science.gov (United States)

    Lord, R. J.; Su, P.-Y.; Bhat, I.; Zhang, S. B.; Lu, T.-M.; Wang, G.-C.

    2015-09-01

    Heteroepitaxial CdTe films were grown by metal organic chemical vapor deposition on glass substrates through nanostructured Ge/CaF2 buffer layers which were biaxially oriented. It allows us to explore the structural properties of multilayer biaxial semiconductor films which possess small angle grain boundaries and to test the principle of a solar cell made of such low-cost, low-growth-temperature semiconductor films. Through the x-ray diffraction and x-ray pole figure analysis, the heteroepitaxial relationships of the mutilayered films are determined as [111] in the out-of-plane direction and CdTe//Ge//{ }{{{CaF}}2} in the in-plane direction. The I-V curves measured from an ITO/CdS/CdTe/Ge/CaF2/glass solar cell test structure shows a power conversion efficiency of ˜η = 1.26%, illustrating the initial success of such an approach. The observed non-ideal efficiency is believed to be due to a low shunt resistance and high series resistance as well as some residual large-angle grain boundary effects, leaving room for significant further improvement.

  19. Electrodeposited Structurally Stable V2O5 Inverse Opal Networks as High Performance Thin Film Lithium Batteries.

    Science.gov (United States)

    Armstrong, Eileen; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

    2015-12-01

    High performance thin film lithium batteries using structurally stable electrodeposited V2O5 inverse opal (IO) networks as cathodes provide high capacity and outstanding cycling capability and also were demonstrated on transparent conducting oxide current collectors. The superior electrochemical performance of the inverse opal structures was evaluated through galvanostatic and potentiodynamic cycling, and the IO thin film battery offers increased capacity retention compared to micron-scale bulk particles from improved mechanical stability and electrical contact to stainless steel or transparent conducting current collectors from bottom-up electrodeposition growth. Li(+) is inserted into planar and IO structures at different potentials, and correlated to a preferential exposure of insertion sites of the IO network to the electrolyte. Additionally, potentiodynamic testing quantified the portion of the capacity stored as surface bound capacitive charge. Raman scattering and XRD characterization showed how the IO allows swelling into the pore volume rather than away from the current collector. V2O5 IO coin cells offer high initial capacities, but capacity fading can occur with limited electrolyte. Finally, we demonstrate that a V2O5 IO thin film battery prepared on a transparent conducting current collector with excess electrolyte exhibits high capacities (∼200 mAh g(-1)) and outstanding capacity retention and rate capability.

  20. Electrodeposition of unsubstituted iron phthalocyanine nano-structure film in a functionalized ionic liquid and its electrocatalytic and electroanalysis applications.

    Science.gov (United States)

    Wang, Kun; Dai, Lina; Liu, Qian; Li, Henan; Ju, Chang; Wu, Jun; Li, Huaming

    2011-10-21

    We report a novel and facile electrodeposition method to fabricate a nano-structure film of the unsubstituted metal phthalocyanine on a glassy carbon electrode (GCE). In this electrodeposition system, unsubstituted iron(II) phthalocyanine (u-FePc) was chosen as the model complex of the unsubstituted metalphthalocyanine, and the ionic liquid 1-octyl-3-methylimidazolium trifluoroacetate was employed as the solvent and electrolyte, thus avoiding the use of additional costly supporting electrolyte. Excellent electrocatalytic performance of the u-FePc nano-structure film was first evaluated by electrocatalytic oxidation of ascorbic acid (AA). Compared with the bare GCE, the oxidation peak potential of AA at u-FePc/GCE shifted negatively about 264 mV, and the oxidation peak current increased about 1.8 times. Furthermore, the as-prepared film was employed for the investigation of luminol electrochemiluminescence (ECL) behavior in neutral solution, which showed excellent performance including under selected experimental conditions, the ECL intensity showing an acceptable linear relationship for luminol concentrations between 5 × 10(-8) and 5 × 10(-6) M, and a linear response to H(2)O(2) over a wide concentration range, from 1.0 × 10(-8) to 1.0 × 10(-5) M in 3.0 μM luminol solution.

  1. Electrodeposition of nickel-phosphorus nanoparticles film as a Janus electrocatalyst for electro-splitting of water

    Science.gov (United States)

    Liu, Qian; Gu, Shuang; Li, Chang Ming

    2015-12-01

    Nickel-phosphorus nanoparticles film on copper foam (Ni-P/CF) was prepared by electrodeposition. This electrocatalyst shows high catalytic activity and durability toward both hydrogen and oxygen evolution reactions in basic electrolytes. The results show that Ni-P/CF can deliver a current density of 10 mA cm-2 at an overpotential of 98 mV for hydrogen production and 325 mV for oxygen generating. A two-electrode water electrolyzer using Ni-P/CF as cathode and anode produces 10 mA cm-2 at a cell voltage of 1.68 V with high stability.

  2. New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

  3. Electrodeposition of Mg doped ZnO thin film for the window layer of CIGS solar cell

    Science.gov (United States)

    Wang, Mang; Yi, Jie; Yang, Sui; Cao, Zhou; Huang, Xiaopan; Li, Yuanhong; Li, Hongxing; Zhong, Jianxin

    2016-09-01

    Mg doped ZnO (ZMO) film with the tunable bandgap can adjust the conduction band offset of the window/chalcopyrite absorber heterointerface to positive to reduce the interface recombination and resulting in an increasement of chalcopyrite based solar cell efficiency. A systematic study of the effect of the electrodeposition potential on morphology, crystalline structure, crystallographic orientation and optical properties of ZMO films was investigated. It is interestingly found that the prepared doped samples undergo a significant morphological change induced by the deposition potential. With negative shift of deposition potential, an obvious morphology evolution from nanorod structrue to particle covered films was observed. A possible growth mechanism for explaining the morphological change is proposed and briefly discussed. The combined optical techniques including absorption, transmission and photoluminescence were used to study the obtained ZMO films deposited at different potential. The sample deposited at -0.9 V with the hexagonal nanorods morphology shows the highest optical transparency of 92%. The photoluminescence spectra reveal that the crystallization of the hexagonal nanorod ZMO thin film deoposited at -0.9 V is much better than the particles covered ZMO thin film. Combining the structural and optical properties analysis, the obtained normal hexagonal nanorod ZMO thin film could potentially be useful in nanostructured chalcopyrite solar cells to improve the device performance.

  4. Controllable degradation of medical magnesium by electrodeposited composite films of mussel adhesive protein (Mefp-1) and chitosan.

    Science.gov (United States)

    Jiang, Ping-Li; Hou, Rui-Qing; Chen, Cheng-Dong; Sun, Lan; Dong, Shi-Gang; Pan, Jin-Shan; Lin, Chang-Jian

    2016-09-15

    To control the degradation rate of medical magnesium in body fluid environment, biocompatible films composed of Mussel Adhesive Protein (Mefp-1) and chitosan were electrodeposited on magnesium surface in cathodic constant current mode. The compositions and structures of the films were characterized by atomic force microscope (AFM), scanning electron microscope (SEM) and infrared reflection absorption spectroscopy (IRAS). And the corrosion protection performance was investigated using electrochemical measurements and immersion tests in simulated body fluid (Hanks' solution). The results revealed that Mefp-1 and chitosan successfully adhered on the magnesium surface and formed a protective film. Compared with either single Mefp-1 or single chitosan film, the composite film of chitosan/Mefp-1/chitosan (CPC (chitosan/Mefp-1/chitosan)) exhibited lower corrosion current density, higher polarization resistance and more homogenous corrosion morphology and thus was able to effectively control the degradation rate of magnesium in simulated body environment. In addition, the active attachment and spreading of MC3T3-E1 cells on the CPC film coated magnesium indicated that the CPC film was significantly able to improve the biocompatibility of the medical magnesium. PMID:27309944

  5. SIMS analysis for detection of contaminants in thin film photovoltaics

    Science.gov (United States)

    Morris, G. C.; Lyons, L. E.; Tandon, R. K.; Wood, B. J.

    1988-12-01

    Minor contaminants in electrodeposited thin film CdTe which produce efficient solar cells have been investigated by secondary ion mass spectroscopy (SIMS) using three different primary ions and three different SIMS instruments. To obtain SIMS data which represent what is present in the sample, a number of precautions must be taken. These are illustrated and positive SIMS data from an electrodeposited film show that it has fewer impurities than commercial crystal CdTe specified as 5N pure. The impurities in the film had not been intentionally added, so their source was investigated by SIMS and found to be the starting chemicals and deposition vessels. For quantification, inductively coupled plasma-atomic emission spectroscopy and atomic absorption spectroscopy of the deposition solutions provided upper limits for the impurity concentration.

  6. Growth of polycrystalline CdS and CdTe thin layers for high efficiency thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, N.; Bosio, A.; Tedeschi, R.; Canevari, V. [Parma Univ. (Italy). Dipartimento di Fisica

    2000-10-16

    Recently, conversion efficiencies close to 16% for thin film solar cells based on the CdS/CdTe heterojunction have been reported. These relevant results, however, have not yet solved the problems which arise when industrial production is undertaken as the demand for low cost imposes constraints which considerably limit the final efficiency of the cells. In this paper, we will show that very high conversion efficiencies can still be achieved even making use of low cost soda-lime glass as substrate. In fact, the Na contained in this kind of glass diffuses during the fabrication of the cell into the active layers of the device causing a substantial decrease of the fill factor and consequently of the efficiency of the cell. In particular, we will describe the methods and the magnetron sputtering techniques used to grow a polycrystalline CdS thin film with a controlled Na content. We will also describe the details of the growth via the close-spaced sublimation (CSS) technique of the CdTe polycrystalline film, which are crucial for the heterojunction and the back contact which has been fabricated exploiting the characteristics of Sb{sub 2}Te{sub 3} which is a low gap p-type semiconductor with a high conductivity. (orig.)

  7. Grain boundaries in CdTe thin film solar cells: a review

    Science.gov (United States)

    Major, Jonathan D.

    2016-09-01

    The current state of knowledge on the impact of grain boundaries in CdTe solar cells is reviewed with emphasis being placed on working cell structures. The role of the chemical composition of grain boundaries as well as growth processes are discussed, along with characterisation techniques such as electron beam induced current and cathodoluminescence, which are capable of extracting information on a level of resolution comparable to the size of the grain boundaries. Work which attempts to relate grain boundaries to device efficiency is also assessed and gaps in the current knowledge are highlighted.

  8. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A. [Departamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco C.P. 44430 (Mexico); Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, D.F., C.P. 11801 (Mexico); Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O. [Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, D. F. C.P. 07360 (Mexico); Hernández-Hernández, A. [Escuela Superior de Apan, Universidad Autónoma del Estado de Hidalgo, Calle Ejido de Chimalpa Tlalayote s/n Colonia Chimalpa, Apan Hidalgo (Mexico); Moure-Flores, F. de [Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro C.P. 76010 (Mexico)

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  9. Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

    Science.gov (United States)

    Wu, Chun; Wang, Kai; Li, Donggang; Lou, Changsheng; Zhao, Yue; Gao, Yang; Wang, Qiang

    2016-10-01

    A high magnetic field (up to 12 T) has been used to anneal 2.6-μm-thick Co50Ni40P10 films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films.

  10. CuInSe{sub 2} films prepared by three step pulsed electrodeposition. Deposition mechanisms, optical and photoelectrochemical studies

    Energy Technology Data Exchange (ETDEWEB)

    Caballero-Briones, F., E-mail: fcaballerobriones@ub.edu [Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Palacios-Padros, A. [Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Sanz, Fausto, E-mail: fsanz@ub.edu [Institute for Bioengineering of Catalonia (IBEC), Edifici Helix, Baldiri i Reixac 15-21, 08028 Barcelona (Spain); Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); CIBER-BBN, Campus Rio Ebro Edificio I-D, Bloque 5, 1a planta, C/Poeta Mariano Esquillor s/n, 50018 Zaragoza (Spain)

    2011-11-01

    p-Type semiconducting copper indium diselenide thin films have been prepared onto In{sub 2}O{sub 3}:Sn substrates by a recently developed pulse electrodeposition method that consists in repeated cycles of three potential application steps. The Cu-In-Se electrochemical system and the related single component electrolytes were studied by cyclic voltammetry to identify the electrode processes and study the deposition processes. In situ atomic force microscopy measurements during the first 100 deposition cycles denote a continuous nucleation and growth mechanism. Particles removed by film sonication from some of the films were characterized by transmission electron microscopy and determined to consist in nanoscopic and crystalline CuInSe{sub 2}. The remaining film is still crystalline CuInSe{sub 2}, as assessed by X-ray diffraction. The chemical characterization by combined X-ray photoelectron spectroscopy, X-ray fluorescence and inductively coupled plasma optical emission spectroscopy, showed that films were Cu-poor and Se-poor. Raman characterization of the as-grown films showed that film composition varies with film thickness; thinner films are Se-rich, while thicker ones have an increased Cu-Se content. Different optical absorption bands were identified by the analysis of the UV-NIR transmittance spectra that were related with the presence of CuInSe{sub 2}, ordered vacancy compounds, Se, Cu{sub 2-x}Se and In{sub 2}Se{sub 3}. The photoelectrochemical activity confirmed the p-type character and showed a better response for the films prepared with the pulse method.

  11. Monte Carlo computer simulation of the deposition of CdTe thin films by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, N.; Tedeschi, R.; Ferrari, L.; Pasquali, S.; Bosio, A.; Canevari, V. [Parma Univ. (Italy). Dipartimento di Fisica

    2000-10-16

    Thin film solar cells based on the CdS/CdTe heterojunction, where the CdTe polycrystalline layer is deposited making use of the close-spaced sublimation (CSS) technique have attained a very good level of conversion efficiency in recent times. Despite this apparently consolidated situation the debate on the formation of the CdS/CdTe heterojunction is still open indicating that a certain margin of improvement is still possible. In particular, the conclusion that a CdS{sub x}Te{sub 1-x} alloy is formed at the CdS/CdTe interface due to interdiffusion that takes place during fabrication. The extent of the interdiffusion and the value of x depend on many factors such as deposition temperature, gas pressure and geometrical parameters. The situation is even more complicated because while the deposition is in progress, the ratio between the number of Te and the Cd atoms which are reaching the target is invariably greater than one. To shed some light on these issues it is mandatory to know at least the exact Te/Cd ratio as a function of the deposition parameters. To this end we carried out a Monte Carlo computer simulation of the CdTe deposition in our CSS equipment. The computer code was implemented starting from very simple hypotheses simulating the deposition in perfect gas at constant temperature. Subsequently, we added more physical reality including temperature gradient between source and target. The code was then finally optimized introducing the usual null-event method which confirmed the consistency of our results. (orig.)

  12. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G. (The University of Toledo)

    2001-08-29

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62 {angstrom} or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to {mu}c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a

  13. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000; ANNUAL

    International Nuclear Information System (INIS)

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62(angstrom) or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to(mu)c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a triple

  14. Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

    2014-11-03

    The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

  15. Optimization of electrodeposited p-doped Sb{sub 2}Te{sub 3} thermoelectric films by millisecond potentiostatic pulses

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, Christian; Akinsinde, Lewis; Zastrow, Sebastian; Heiderich, Sonja; Toellner, William; Nielsch, Kornelius; Bachmann, Julien [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Reinsberg, Klaus G.; Broekaert, Jose A.C. [Institute of Applied and Inorganic Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, 20146 Hamburg (Germany); Rampelberg, Geert; Detavernier, Christophe [Department of Solid State Sciences, University of Ghent, Krijgslaan 281/S1, 9000 Ghent (Belgium)

    2012-03-15

    A systematic optimization of p-type Sb{sub 2}Te{sub 3} thermoelectric films made by potentiostatic electrodeposition on Au and stainless steel substrates is presented. The influence of the preparative parameters of deposition voltage, concentration, and the deposition method are investigated in a nitric acid solution. As a postdeposition step, the influence of annealing the films is investigated. The use of a potential-controlled millisecond-pulsed deposition method could improve both the morphology and the composition of the films. The samples are characterized in terms of composition, crystallinity, Seebeck coefficient, and electrical resistivity. Pulsed-deposited films exhibit Seebeck coefficients of up to 160 {mu}V K{sup -1} and an electrical conductivity of 280 S cm{sup -1} at room temperature, resulting in power factors of about 700 {mu}W m{sup -1} K{sup -2}. After annealing, power factors of maximum 852 {mu}W m{sup -1} K{sup -2} are achieved. Although the annealing of DC-deposited films significantly increased the power factor, they do not reach the values of the pulsed-deposited films in the preannealing state. Structural analysis is performed with X-ray diffraction and shows the crystalline structure of Sb{sub 2}Te{sub 3} films. The performance is tuned by annealing of deposited films up to 300 C under He atmosphere while performing in-situ X-ray diffraction and resistivity measurements. The chemical analysis of the films is performed by inductively coupled plasma optical emission spectroscopy (ICP-OES) as well as scanning electron microscope energy dispersive X-ray analysis (SEM-EDX). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Preparation of p-type Na-doped Cu2O by electrodeposition for a p-n homojunction thin film solar cell

    Science.gov (United States)

    Elfadill, Nezar G.; Hashim, M. R.; Chahrour, Khaled M.; Mohammed, S. A.

    2016-06-01

    In this work, a method of enhancing the electrical properties of the electrodeposited p-type Cu2O film is described. Sodium doped Cu2O was achieved by adding sodium aluminate complex solution to the electrodeposition alkaline Cu (II) lactate electrolyte. The optimal Na content [Na at% atomic ratio] incorporated in the Cu2O film was found to be approximately 1.34 at.%. The XPS result shows that the binding energy at 1072.4 ± 0.2 eV corresponds to the presence of sodium in sodium oxide. The optimized resistivity and the hole concentration were approximately 291 Ω cm and 2.13 × 1018 cm3, respectively. A Cu2O p-n homojunction solar cell with 2.05% efficiency was fabricated using a Cl-doped n-type Cu2O film and an optimized Na-doped Cu2O film.

  17. Precisely Controlled Synthesis of High Quality Kesterite Cu2ZnSnS4 Thin Film via Co-Electrodeposited CuZnSn Alloy Film.

    Science.gov (United States)

    Hreid, Tubshin; Tiong, Vincent Tiing; Cai, Molang; Wang, Hongxia; Will, Geoffrey

    2016-06-01

    In this work, a facile co-electrodeposition method was used to fabricate CuZnSn alloy films where the content of copper, zinc and tin could be precisely controlled through manipulating the mass transfer process in the electrochemical deposition. By finely tuning the concentration of the cations of Cu2+, Zn2+ and Sn2+ in the electrochemical bath solution, uniform CuZnSn film with desired composition of copper poor and zinc rich was made. Sulphurisation of the CuZnSn alloy film led to the formation of compact and large grains Cu2ZnSnS4 thin film absorber with an optimum composition of Cu/(Zn+Sn) ≈ 0.8, Zn/Sn ≈ 1.2. Both SEM morphology and EDS mapping results confirmed the uniformity of the CuZnSn and Cu2ZnSnS4 films and the homogeneous distribution of Cu, Zn, Sn and S elements in the bulk films. The XRD and Raman measurements indicated that the synthesized Cu2ZnSnS4 film was kesterite phase without impurities detected. Photoelectrochemical tests were carried out to evaluate the CZTS film's photocurrent response under illumination of green light. PMID:27427618

  18. Influence of pH and bath composition on properties of Ni–Fe alloy films synthesized by electrodeposition

    Indian Academy of Sciences (India)

    Xinghua Su; Chengwen Qiang

    2012-04-01

    Fe–Ni films were electrodeposited on ITO glass substrates from the electrolytes with different molar ratio of Ni2+/Fe2+ and different pH values (2.1, 2.9, 3.7 and 4.3) at 25°C. The properties of Fe–Ni alloy films depend on both Ni2+ and Fe2+ concentrations in electrolyte and pH values. The content of Ni increases from 38% to 84% as the mole ratio of NiSO4/FeSO4 increasing from 0.50/0.50 to 0.90/0.10 in electrolyte and slightly decreases from 65% to 42% as the pH values increase from 2.1 to 4.3. The X-ray diffraction analysis reveals that the structures of the films strongly depend on the Ni content in the binary films. The magnetic performance of the films shows that the saturation magnetization (s) decreases from 1775.01 emu/cm3 to 1501.46 emu/cm3 with the pH value increasing from 2.1 to 4.3 and the saturation magnetization (s) and coercivity (c) move up from 1150.44 emu/cm3 and 58.86 Oe to 2498.88 emu/cm3 and 93.12 Oe with the increase of Ni2+ concentration in the electrolyte, respectively.

  19. Electrodeposition of In{sub 2}O{sub 3} thin films from a dimethylsulfoxide based electrolytic solution

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, R.; Munoz, E.; Gomez, H. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Curauma Valparaiso (Chile); Dalchiele, E.A.; Marotti, R.E. [Instituto de Fisica and CINQUIFIMA, Facultad de Ingenieria, Montevideo (Uruguay); Martin, F.; Leinen, D.; Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie, Departamento de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga (Spain)

    2013-02-15

    Indium (III) oxide (In{sub 2}O{sub 3}) thin films have been obtained after heat treatment of In(OH){sub 3} precursor layers grown by a potential cycling electrodeposition (PCED) method from a dimethylsulfoxide (DMSO) based electrolytic solution onto fluorine-doped tin oxide (FTO) coated glass substrates. X-ray diffraction (XRD) measurements indicate the formation of a polycrystalline In{sub 2}O{sub 3} phase with a cubic structure. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed a smooth morphology of the In{sub 2}O{sub 3} thin films after an optimized heat treatment had been developed. The surface composition and chemical state of the semiconductor films was established by X-ray photoelectron spectroscopy analysis. The nature of the semiconductor material, flat band potential and donor density were determined from Mott-Schottky plots. This study reveals that the In{sub 2}O{sub 3} films exhibited n-type conductivity with an average donor density of 2.2 x 10{sup 17} cm{sup -3}. The optical characteristics were determined through transmittance spectra. The direct and indirect band gap values obtained are according to the accepted values for the In{sub 2}O{sub 3} films of 2.83 and 3.54 eV for the indirect and direct band gap values. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effects of CdCl sub 2 on the growth of CdTe on CdS films for solar cells by isothermal close-spaced vapour transport

    Energy Technology Data Exchange (ETDEWEB)

    Vaccaro, P.O.; Meyer, G.; Saura, J. (Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche)

    1991-10-14

    CdS/CdTe solar cells were made by depositing CdTe films by an isothermal close-spaced vapour transport method on sintered CdS/glass substrates. The influence of amounts of CdCl{sub 2} ranging from O wt.% to 8 wt% in the CdTe source on the solar cell performance was studied. Increasing the CdCl{sub 2} content enhances the CdTe grain size but degrades the spectral response and increases the reverse saturation current. An optimal CdCl{sub 2} concentration of 1wt% was found for a growth temperature of 620{sup o}C. (author).

  1. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  2. Study of in situ CdCl{sub 2} treatment on CSS deposited CdTe films and CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paulson, P.D.; Dutta, V. [Indian Inst. of Tech., New Delhi (India). Centre for Energy Studies

    2000-07-17

    Effect of in situ CdCl{sub 2} treatment on the morphological, structural and electrical properties of CdTe films as well as on solar cell characteristics of CdS/CdTe junction has been investigated. XRD measurements show that the presence of CdCl{sub 2} vapours induces left angle 111 right angle oriented growth in the CdTe films. CdCl{sub 2} concentration required for this oriented growth is found to be directly proportional to the substrate temperature. SEM measurements show enhanced grain growth in the presence of CdCl{sub 2}. Spectral response of the CdCl{sub 2} treated CdS/CdTe solar cells shows an enhanced CdS diffusion in to the CdTe, which results in an improved spectral response in UV range and a consequent reduction in the interface states density. A drastic reduction in the deep levels due to the CdCl{sub 2} treatment, as seen in the photo-capacitance studies, has results in CdS/CdTe solar cells having efficiency >8%. (orig.)

  3. Effects of Substrate Local Strain on Microstructure of Electrodeposited Aluminum Film

    Institute of Scientific and Technical Information of China (English)

    TAN Yuehua; YAN Bo; GAO Ge; YANG Yuxin

    2006-01-01

    The aluminum coating layer was formed on a copper substrate with local strain region by using the electrodeposited method. It was found that the particle shape of the coating deposited on the copper substrate is very sensitive to the strain extent of substrate. The large needle-like aluminum particles were observed on the substrate region with large local strain, indicating that substrate local strain may affect the shape of the deposited particles and promote the nucleation and growth of the deposited particles.

  4. New Method of Pulsed Electrodeposition of Nanostructure of ZnS Films

    OpenAIRE

    M. B. Dergacheva; K.A. Urazov; G.M. Khussurova; K.A. Leontyeva

    2016-01-01

    The voltammetry method of analysis is used to investigate the electrochemical behavior of zinc(II) and thiosulfate (\\(\\text{S}_{2}\\text{O}_{3}^{2-}\\)) ions in acidic solutions and their electrochemical deposition onto glass coated with a conductive layer of tin oxide. It is found that electrodeposition conducted according to the two-electrode scheme using the pulse current generated by the industrial alternating current produces sound zinc sulfide deposits. Physical and chemical properties of...

  5. Electrodeposition of aluminium film on P90 Li-Al alloy as protective coating against corrosion

    OpenAIRE

    U. Bardi; Caporali, S; M. Craig; A. Giorgetti; Perissi, I; Nicholls, J. R.

    2009-01-01

    In this paper we report on the electrodeposition of thin aluminium layers on P90 lithium–aluminium alloy at room temperature from a chloroaluminate ionic liquid (1-butyl-3-methyl imidazolium heptachloroaluminate [BMIm]Al2Cl7). We found that the treatment of the P90 sample's surface is a key point to obtain good quality coatings. On freshly mechanically polished surfaces, thin (about 24 µm), homogeneous and dense aluminium layers were obtained at 10 µm h− 1 deposition rate. F...

  6. Effect of in situ UHV CdCl2-activation on the electronic properties of CdTe thin film solar cells

    International Nuclear Information System (INIS)

    To reach reasonable conversion efficiencies of approximately 10% and above with CdTe thin film solar cells an activation step involving chlorine at elevated temperatures seems to be necessary before back contact formation. This activation process has been simulated in an ultrahigh-vacuum (UHV) system. Solar cells with a maximum efficiency of 9.1% have been prepared using this process. In addition the effect of the CdCl2 activation process on the electronic properties of each solar cell layer, SnO2, CdS and CdTe has been investigated in situ using photoelectron spectroscopy. The effects of the activation on the Fermi level position of all investigated layers is presented and discussed

  7. Electrodeposited Co-doped NiSe2 nanoparticles film: a good electrocatalyst for efficient water splitting

    Science.gov (United States)

    Liu, Tingting; Asiri, Abdullah M.; Sun, Xuping

    2016-02-01

    In this communication, we report that a Co-doped NiSe2 nanoparticles film electrodeposited on a conductive Ti plate (Co0.13Ni0.87Se2/Ti) behaves as a robust electrocatalyst for both HER and OER in strongly basic media, with good activity over a NiSe2/Ti counterpart. This Co0.13Ni0.87Se2/Ti catalytic electrode delivers 10 mA cm-2 at an overpotential of 64 mV for HER and 100 mA cm-2 at an overpotential of 320 mV for OER in 1.0 M KOH. A voltage of only 1.62 V is required to drive 10 mA cm-2 for the two-electrode alkaline water electrolyzer using Co0.13Ni0.87Se2/Ti as an anode and cathode.In this communication, we report that a Co-doped NiSe2 nanoparticles film electrodeposited on a conductive Ti plate (Co0.13Ni0.87Se2/Ti) behaves as a robust electrocatalyst for both HER and OER in strongly basic media, with good activity over a NiSe2/Ti counterpart. This Co0.13Ni0.87Se2/Ti catalytic electrode delivers 10 mA cm-2 at an overpotential of 64 mV for HER and 100 mA cm-2 at an overpotential of 320 mV for OER in 1.0 M KOH. A voltage of only 1.62 V is required to drive 10 mA cm-2 for the two-electrode alkaline water electrolyzer using Co0.13Ni0.87Se2/Ti as an anode and cathode. Electronic supplementary information (ESI) available: Experimental section and supplementary figures. See DOI: 10.1039/c5nr07170d

  8. Depth profiling sulphur in bulk CdTe and {CdTe}/{CdS} thin film heterojunctions

    Science.gov (United States)

    Lane, D. W.; Conibeer, G. J.; Romani, S.; Healy, M. J. F.; Rogers, K. D.

    1998-03-01

    Polycrystalline CdTeCdS heterojunction solar cells are a possible candidate for the low cost, high efficiency conversion of solar energy. The formation of an intermediate CdS xTe 1- x layer during a high temperature annealing stage is believed to increase optical absorption and decrease cell efficiency. S diffusion in single crystal CdTe has been investigated by NRA using the 32S (d,p o) 33S nuclear reaction, at a deuteron energy of 2 MeV. Details of the NRA depth profiling procedure are given, which was found to be relatively straightforward and suitable for use on a small Van de Graaff accelerator. The resulting diffusion parameters are compared to those obtained by SIMS using a Cs + primary ion beam, examining negative secondary ions. The diffusion coefficients were found to be 1.1 × 10 -15cm 2 s -1 at 450°C and ˜8 × 10 -15cm -1 s at 550°C. S diffusion in thin films was also investigated by 2 MeV 4He + RBS on annealed polycrystalline CdSCdTe multilayers.

  9. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Zhu, Tao; Yong, Siek-Ting [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chan, Eng Seng [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia)

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  10. A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

    Science.gov (United States)

    Mughal, Maqsood Ali

    Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath

  11. Characterization and corrosion resistance of anodic electrodeposited titanium oxide/phosphate films on Ti-20Nb-10Zr-5Ta bioalloy

    Energy Technology Data Exchange (ETDEWEB)

    Popa, Monica; Vasilescu, Cora; Drob, Silviu I.; Osiceanu, Petre; Anastasescu, Mihai; Calderon-Moreno, Jose M., E-mail: josecalderonmoreno@yahoo.com [Institute of Physical Chemistry ' Ilie Murgulescu' of the Romanian Academy, Bucharest (Romania)

    2013-07-15

    In this work, the anodic galvanostatic electrodeposition of an oxidation film containing phosphates on Ti-20Nb-10Zr-5Ta alloy from orthophosphoric acid solution is presented. Its composition was determined by X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman micro-spectroscopy, and its topography by atomic force microscopy (AFM). The corrosion resistance of the coated alloy in simulated human fluid (by linear polarization method and monitoring of open circuit potentials, corresponding open circuit potential gradients) as well as the characterization of the coating (by Raman spectroscopy and depth profile X-ray photoelectron spectroscopy (XPS)) deposited in a period of 300 h soaking in simulated human body fluid were studied. The electrodeposited film was composed of amorphous titanium dioxide and contained phosphate groups. The corrosion resistance of the coated Ti-20Nb-10Zr-5Ta alloy in neutral and alkaline Ringer's solutions was higher than that of the bare alloy due to the protective properties of the electrodeposited film. The corrosion parameters improved over time as result of the thickening of the surface film by the deposition from the physiological solution. The deposited coating presented a variable composition in depth: at the deeper layer nucleated nanocrystalline hydroxyapatite and at the outer layer amorphous calcium phosphate. (author)

  12. Characterization and corrosion resistance of anodic electrodeposited titanium oxide/phosphate films on Ti-20Nb-10Zr-5Ta bioalloy

    International Nuclear Information System (INIS)

    In this work, the anodic galvanostatic electrodeposition of an oxidation film containing phosphates on Ti-20Nb-10Zr-5Ta alloy from orthophosphoric acid solution is presented. Its composition was determined by X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman micro-spectroscopy, and its topography by atomic force microscopy (AFM). The corrosion resistance of the coated alloy in simulated human fluid (by linear polarization method and monitoring of open circuit potentials, corresponding open circuit potential gradients) as well as the characterization of the coating (by Raman spectroscopy and depth profile X-ray photoelectron spectroscopy (XPS)) deposited in a period of 300 h soaking in simulated human body fluid were studied. The electrodeposited film was composed of amorphous titanium dioxide and contained phosphate groups. The corrosion resistance of the coated Ti-20Nb-10Zr-5Ta alloy in neutral and alkaline Ringer's solutions was higher than that of the bare alloy due to the protective properties of the electrodeposited film. The corrosion parameters improved over time as result of the thickening of the surface film by the deposition from the physiological solution. The deposited coating presented a variable composition in depth: at the deeper layer nucleated nanocrystalline hydroxyapatite and at the outer layer amorphous calcium phosphate. (author)

  13. Photo-assisted electrodeposition of polypyrrole back contact to CdS/CdTe solar cell structures

    International Nuclear Information System (INIS)

    Glass/indium tin oxide/CdS/CdTe photovoltaic structures were prepared using the high vacuum evaporation method, followed by a typical activation procedure, which involves annealing of the structures at 415–430 °C in the presence of CdCl2 in air. The main purpose of this work was to prepare and evaluate the performance of complete CdS/CdTe solar cell structures with polypyrrole (PPy) back contact and compare it to the structures with standard, copper containing back contact. Back contact layers of PPy doped with ß-naphthalene sulfonate were deposited onto activated CdTe layers by photo-assisted electrodeposition technique in a three-electrode electrochemical cell. It was found that intensive white light illumination from a xenon lamp facilitates PPy deposition at a lower applied potential range and improves quality of obtained polymer films. Applied technique gives the possibility to deposit the PPy layer strictly onto illuminated photoactive CdTe surface eliminating possible short-circuiting through pinholes and cracks in CdTe photoabsorber layer. Furthermore, relatively low deposition potential values give the possibility to reduce electrochemical degradation of CdS/CdTe photovoltaic structure in an electrochemical cell. - Highlights: ► Polypyrrole (PPy) conductive polymer back contact (BC) to CdTe semiconductor. ► Hybrid organic/inorganic photovoltaic structures. ► PPy layer to CdTe by photo-assisted electrodeposition technique ► Comparable efficiency of cells with PPy and conventional inorganic CuxTe BC

  14. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  15. Preparation of CuGaSe{sub 2} absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Steichen, M., E-mail: marc.steichen@uni.lu; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

    2011-08-31

    CuGaSe{sub 2} absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa{sub 2} alloying during the electrodeposition and CuGaSe{sub 2} formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe{sub 2} absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

  16. Properties of CdTe films deposited by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Murali, K.R.; Radhakrishna, I.; Nagaraja Rao, K.; Venkatesan, V.K. (Central Electrotechnical Research Inst., Karaikudi (India))

    1990-04-01

    Cadmium telluride thin films were prepared by electron beam evaporation on glass substrates kept at different temperatures in the range 30-300degC. The films were characterized by X-ray diffraction, scanning electron microscopy and optical absorption measurements. The conductivity of the films was measured in the temperature range 100-300 K. While the low temperature data (100-200 K) could be explained by the variable range hopping process, the high temperature data (200-300 K) could be explained on the basis of Seto's model for thermionic emission of the carriers over the grain boundaries. Transmission spectra have indicated a direct and gap around 1.55 eV. (orig.).

  17. Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Guangcan Luo

    2014-01-01

    Full Text Available The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

  18. Study of the Mg incorporation in CdTe for developing wide band gap Cd{sub 1-x}Mg{sub x}Te thin films for possible use as top-cell absorber in a tandem solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  19. Non-enzymatic Glucose Biosensor Based on Cu/SWNTs Composite Film Fabricated by One-step Electrodeposition

    Institute of Scientific and Technical Information of China (English)

    SUN Fang; LIU Peng; LI Li; LIANYong-fu

    2011-01-01

    Based on the adsorption of copper ions on single-walled carbon nanotubes(SWNTs)in electrolyte,Cu/SWNTs nanocomposite film was initially prepared on indium-doped tin oxide(ITO)substrate by one-step electrodeposition.This method may provide a versatile and facile pathway to fabricate other SWNTs-supported metal composite films.Electrochemical experiments revealed that the obtained Cu/SWNTs/ITO electrode offered an excellent electrocatalytic activity towards the oxidation of glucose and could be applied to the construction of non-enzymatic glucose biosensor.The linear range of the sensor was 1.0× 10-6to 6.0× 10-4 mol/L and the response time was within 2 s.Particularly,its sensitivity reached as high as 1434.67 μA.L·mmol-1·cm-2,which was superior to any other non-enzymatic glucose biosensor based on copper-carbon nanotubes electrode reported previously.

  20. Analysis of the diode characteristics of thin film solar cells based on CdTe

    International Nuclear Information System (INIS)

    A physical approach to the optimization of photoelectric processes in thin film multilayer systems has been developed. By means of a simulation of the influence of light-diode characteristics on the efficiency factor, it is concluded that the optimization of the photoelectric processes in ITO/CdS/CdTe/Cu/Au film solar cells is mainly determined by two competing physical mechanisms: an increase in the efficiency of the process of distribution of nonequilibrium charge carriers and a reduction in the efficiency of their generation, as the CdS layer thickness grows

  1. Hydrogen peroxide biosensor based on electrodeposition of zinc oxide nanoflowers onto carbon nanotubes film electrode

    Institute of Scientific and Technical Information of China (English)

    Hui Ping Bai; Xu Xiao Lu; Guang Ming Yang; Yun Hui Yang

    2008-01-01

    A new amperometric biosensor for hydrogen peroxide was developed based on adsorption of horseradish peroxidase at the glassy carbon electrode modified with zinc oxide nanoflowers produced by electrodeposition onto multi-walled carbon nanotubes (MWNTs) firm. The morphology of the MWNTs/nano-ZnO electrode has been investigated by scanning electron microscopy (SEM), and the electrochemical performance of the electrode has also been studied by amperometric method. The resulting electrode offered an excellent detection for hydrogen peroxide at -0.11 V with a linear response range of 9.9 × 10(-7) to 2.9 × 10(-3) mol/L with a correlation coefficient of 0.991, and response time <5 s. The biosensor displays rapid response and expanded linear response range, and excellent stability.

  2. Effects of annealing temperature on morphology and thickness of samarium electrodeposited thin films

    Science.gov (United States)

    Burns, Jonathan D.; Myhre, Kristian G.; Sims, Nathan J.; Stracener, Daniel W.; Boll, Rose A.

    2016-09-01

    Electroplated depositions of Sm were prepared using a vertical well-type electrodeposition unit with an aqueous ammonium acetate electrolyte system, with an average deposition yield just over 87%. The depositions were analyzed for morphology and thickness by scanning electron microscopy (SEM) and chemical composition by energy dispersion X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) before and after firing. The depositions were fired at 125-700 °C, while varying the heating rate from 0.5 to 10 °C/min in either an oxidizing or reducing atmosphere. A heating rate of 10 °C/min was slow enough to prevent disruption of the deposition morphology during firing. A gas sweep enhanced the removal of any organic substituents, with an oxidizing environment being more advantageous than a reducing environment.

  3. Effect of coating current density on the wettability of electrodeposited copper thin film on aluminum substrate

    Directory of Open Access Journals (Sweden)

    Arun Augustin

    2016-09-01

    Full Text Available Copper is the only one solid metal registered by the US Environmental Protection Agency as an antimicrobial touch surface. In touch surface applications, wettability of the surface has high significance. The killing rate of the harmful microbes depends on the wetting of pathogenic solution. Compared to the bulk copper, coated one on aluminum has the advantage of economic competitiveness and the possibility of manufacturing complex shapes. In the present work, the copper coating on the aluminum surface has successfully carried out by electrodeposition using non cyanide alkaline bath. To ensure good adhesion strength, the substrate has been pre-zincated prior to copper deposition. The coating current density is one of the important parameters which determine the nucleation density of the copper on the substrate. To understand the effect of current density on wettability, the coating has done at different current densities in the range of 3 A dm−2 to 9 A dm−2 for fixed time interval. The grain size has been measured from TEM micrographs and showed that as current density increases, grain size reduces from 62 nm to 35 nm. Since the grain size reduces, grain boundary volume has increases. As a result the value of strain energy (calculated by Williamson–Hall method has increased. The density of nodular morphology observed in SEM analysis has been increased with coating current density. Further, wettability studies with respect to double distilled water on the electrodeposited copper coatings which are coated at different current densities are carried out. At higher current density the coating is more wettable by water because at these conditions grain size of the coating decreases and morphology of grain changes to a favorable dense nodularity.

  4. Electrodeposited Pd-Ni-Mo film as a cathode material for hydrogen evolution reaction

    International Nuclear Information System (INIS)

    A Pd-Ni-Mo film was prepared on stainless steel substrate as a novel electrode material for hydrogen evolution reaction catalysis. The surface micro-morphology, chemical composition and microstructure of the Pd-Ni-Mo film were characterizated with SEM, EDS, XPS and TEM. The obtained film is a multiple phase ternary alloy containing crystallines and amorphous phases. The electrochemical measurements showed that the Pd-Ni-Mo film has excellent catalytic activity for hydrogen evolution reaction with good corrosion resistance in 1 M NaOH solution. The proton discharge electrosorption is the rate determining step of hydrogen evolution reaction on Pd-Ni-Mo film surface. The better electrocatalysis performance of the Pd-Ni-Mo film is attributed to its larger real surface as well as the enhanced electrochemical activity of the film surface due to the alloying effect

  5. Electrodeposition of Pr-Fe alloy films in urea-dimethylsulfoxide

    Institute of Scientific and Technical Information of China (English)

    ZHOU Hao; KE Qinfang; HUANG Kaisheng; LIU Guankun; YUAN Dingsheng

    2005-01-01

    Cyclic voltammetry and chronoamperometry were used to investigate the electrochemical behavior of Pr3+ ions electrochemical parameters were measured. Potentiostatic depositions between -1.6 and -2.4 V were applied to deposit Pr-Fe films in urea-DMSO mixed solution. The Pr content in the alloy films was in the range of 34.89 wt.% to 37.15 wt.%.The Pr-Fe alloy films are proven to be amorphous by XRD (X-ray diffraction).

  6. Properties of Electrodeposited Cadmium Sulfide Films for Photovoltaic Devices With Comparison to CdS Films Prepared by Other Methods

    OpenAIRE

    KADIRGAN, Figen

    2000-01-01

    Films of CdS for photovoltaic devices were electrochemically deposited on tin oxide coated glass substrates at different conditions. The films were found to be smooth and uniform with a small grain size. X-ray diffraction measurement and analysis indicated a hexagonal phase rather than the cubic phase. The surface composition of the films was investigated by Auger Spectroscopy. Electrochemical deposition parameters were studied to obtain the optimum conditions for the best CdS film...

  7. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Subcontract Report, September 2004--September 2005

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2006-04-01

    Specific overall objectives of this subcontract are improvement in baseline field performance of manufactured CdTe PV modules while reducing environmental, health and safety risk in the manufacturing environment. Project objectives focus on four broad categories: (1) development of advanced front-contact window layers, (2) improved semiconductor film deposition, (3) development of improved accelerated life test procedures that indicate baseline field performance, and (4) reduction of cadmium-related environmental, health and safety risks. First Solar has significantly increased manufacturing capacity from less than 2 MW/yr to more than 20 MW/yr, while increasing the average module total-area power conversion efficiency from 7% to >9%. First Solar currently manufactures and sells 50-65-W thin-film CdTe PV modules at a rate of about 1.9 MW/month. Sales backlog (booked sales less current inventory divided by production rate) is more than a year. First Solar is currently building new facilities and installing additional equipment to increase production capacity by 50 MW/yr; the additional capacity is expected to come on line in the third quarter of 2006.

  8. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-06-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  9. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Nouhi, A.; Stirn, R.J.; Meyers, P.V.; Liu, C.H.

    1989-05-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9% have been demonstrated. I--V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd/sub 0.85/Mn/sub 0.15/Te in place of CdTe as an i layer.

  10. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  11. Correlation between physical properties and growth mechanism of In2S3 thin films fabricated by electrodeposition technique with different deposition times

    Science.gov (United States)

    Braiek, Zied; Gannouni, Mounir; Ben Assaker, Ibtissem; Bardaoui, Afrah; Lamouchi, Amina; Brayek, A.; Chtourou, Radhouane

    2015-10-01

    Indium sulfide (In2S3) thin films were grown on ITO-coated glass substrate using the electrodeposition method. The effect of the deposition time on the structural, morphological, optical and electrical properties of the as-grown In2S3 thin films was studied. XRD spectra of the obtained films reveal the polycrystalline nature of (β-In2S3) with a tetragonal crystal structure along the (109) plane, and exhibit a sharp transition to the (0012) plane when the deposition time is extended beyond 20 min. Using atomic force microscope (AFM), the surface morphology shows a remarkable change in the grain size, thickness, and surface roughness when varying the deposition time. UV-VIS spectrophotometer show that the optical band gap values of In2S3 decrease from about 2.82 to 1.93 eV by extending the electrodeposition duration from 5 to 20 min. All films were found to have an n-type character with a lower electrical resistivity of about 1.8×10-3 Ω cm for films deposited at 20 min.

  12. Composition Control of CuInSe2 Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition Process.

    Science.gov (United States)

    Kwon, Yong Hun; Do, Hyun Woo; Kim, Hyoungsub; Cho, Hyung Koun

    2015-10-01

    Cu/In bi-metal stacked structures were prepared on Mo coated soda lime glass substrates using electrodeposition method. These metallic precursors were selenized at 550 °C for 60 min to synthesize the CuInSe2 (CIS) thin films in a thermal evaporator chamber with an Se overpressure atmosphere. The composition ratios of CIS thin films were systematically controlled using the coulometric method of the electrodeposition, where the accumulated coulomb of In layers was varied from 1062 to 6375 mC/cm2. As a result, the stoichiometric CIS film was obtained in the Cu/In coulomb ratio of 0.6. Highly crystallized CIS films were produced from the liquid Cu-Se phase in the Cu/In coulomb ratio of ≥0.6. In contrast, the crystallinity and grain size were degraded in the In-rich region. We found that the Cu/In composition ratio of CIS films was linearly proportional to the precursor thickness determined by the coulomb ratio. PMID:26726424

  13. Polycrystalline thin-film technology: Recent progress in photovoltaics

    Science.gov (United States)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  14. Polycrystalline thin-film technology: Recent progress in photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  15. Synthesis of the CulnSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

    Institute of Scientific and Technical Information of China (English)

    Wei-long Liu; Shu-huei Hsieh; Wen-jauh Chen; Pei-i Wei; Jiing-herng Lee

    2009-01-01

    The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thinfilm for solar cells.The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time.The experiments were carried out according to an L18(2137) table.An X-ray diffractometer (XRD) and a scanning electron microscope (SEM) were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment.The results showed that the CuInSe2phase was deposited with a preferred plane (112) parallel to the substrate surface.The optimum parameters are as follows:currentdensity,7 mA/cm2;CuCl2 concentration,10 raM;FeCl3 concentration,50 raM;H2SeO3 concentration,15 mM;TEA amount,0 mL;pH value,1.65;deposition time,10 min;and annealing temperature,500℃.

  16. Multifunctional hybrid coating on titanium towards hydroxyapatite growth: Electrodeposition of tantalum and its molecular functionalization with organophosphonic acids films

    Energy Technology Data Exchange (ETDEWEB)

    Arnould, Christelle; Delhalle, Joseph [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Mekhalif, Zineb [Laboratory of Chemistry and Electrochemistry of Surfaces, University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium)], E-mail: zineb.mekhalif@fundp.ac.be

    2008-07-20

    Titanium and its alloys are base materials used in the dental and orthopaedic fields owing to suitable intrinsic properties: good biocompatibility, high corrosion resistance and excellent mechanical properties. However, the bonding between titanium and bone tissue is not always strong enough and can become a critical problem. In this context, the two main objectives of this paper are the increase of the corrosion resistance and the improvement of the hydroxyapatite (HAp) growth. The surface modification considered here is achieved in three main steps and consists in the elaboration of different inorganic and organic coatings. The first step is the elaboration of electrodeposition of tantalum on the titanium oxide film of a titanium substrate. The second step is the modification of the tantalum oxide coating with organophosphonic acids. The last step is the nucleation and growth of HAP on the outermost layer of the system by immersion in a simulated body fluid. The hybrid coating tantalum oxide/organophosphonic acids/molecular layer is shown to be promising for orthopaedic implants.

  17. Involvement of nanoparticles in the electrodeposition of hydrous iridium oxide films

    International Nuclear Information System (INIS)

    The highly dispersed nature of hydrous iridium oxide combined with its electrochemical properties makes it a very interesting material. Possible applications can be found in electrocatalysis, neural stimulation, electrochromic devices and pH sensors. In the present work a commonly used electrodeposition solution, based on IrCl4, oxalic acid, H2O2 and NaCO3, was studied with electrochemical methods as well as UV–vis spectroscopy. The hexachloroiridate (IV) complex was initially observed in both UV–vis and cyclic voltammetry. No oxalato complexes were detected, instead oxalate is proposed to act as a stabilising agent in nanoparticle formation. Initially hydrogen peroxide was found to reduce Ir(IV) complexes to Ir(III). However, after increasing the pH by addition of sodium carbonate it was shown to act as an oxidising agent instead. During development of the solution UV–vis showed the formation of multinuclear complexes and with aging also scattering from solid materials was observed. Transmission electron microscopy confirmed the formation of nanoparticles of iridium oxide with a diameter of ∼3 nm. The role of nanoparticles and non-particulate species in the deposition process is discussed.

  18. Electrodeposition of Silver Nanoparticles on MWCNT Film Electrodes for Hydrogen Peroxide Sensing

    Institute of Scientific and Technical Information of China (English)

    DING,Yan-Feng; JIN,Guan-Ping; YIN,Jun-Guang

    2007-01-01

    Silver (Ag) nanoparticles were directly electrodeposited on multi-walled carbon nanotubes (MWCNT) in AgNO3/LiNO3 containing EDTA (ethylenediaminetetraacetic acid). The structure and nature of the resulting Ag/MWNT composite were characterized by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD), and the distribution shape of Ag nanoparticles was found to be dependent on the presence of EDTA. The modified electrode showed excellent electrocatalytic activity to redox reaction of hydrogen peroxide and the mechanism of hydrogen peroxide was partly reversible procession with oxidation and reduction peaks at 0.77 and -0.83 V, respectively. The oxidation and reduction peak currents were linearly related to hydrogen peroxide concentration in the range of 1×10-6-3×10-4 and 1×10-8-7×10-4 mol·L-1 with correlation coefficients of 0.996 and 0.986, and 3s-detection limit of 9 × 10-7 and 7 × 10-9 mol·L-1.

  19. Effect of Applied Current Density on Morphological and Structural Properties of Electrodeposited Fe-Cu Films

    Institute of Scientific and Technical Information of China (English)

    Umut Sarac; M. Celalettin Baykul

    2012-01-01

    A detailed study has been carried out to investigate the effect of applied current density on the composition, crystallographic structure, grain size, and surface morphology of Fe-Cu films. X-ray diffraction (XRD) results show that the films consist of a mixture of face-centered cubic (fcc) Cu and body centered cubic (bcc) ~-Fe phases. The average crystalline size of both Fe and Cu particles decreases as the applied current density becomes more negative. Compositional analysis of Fe-Cu films indicates that the Fe content within the films increases with decreasing current density towards more negative values. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) have been used to investigate the surface morphology of Fe-Cu films. It is observed that the surface morphology of the films changes from dendritic structure to a cauliflower structure as the applied current density becomes more negative. The surface roughness and grain size of the Fe-Cu films decrease with decreasing applied current density towards more negative values.

  20. Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

    Directory of Open Access Journals (Sweden)

    Shi C

    2010-01-01

    Full Text Available Abstract Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0–3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g−1 was observed for the sample with a specific mass of 89 μg cm−2 at a scan rate of 2 mV s−1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES.

  1. Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

    Science.gov (United States)

    Shi, C.; Zhitomirsky, I.

    2010-03-01

    Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0-3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC) in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g-1 was observed for the sample with a specific mass of 89 μg cm-2 at a scan rate of 2 mV s-1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES).

  2. Electrodeposition of nanostructured CoNi thin films and their anomalous infrared properties

    International Nuclear Information System (INIS)

    Different composition, thickness and structure of CoNi thin films supported on glassy carbon were prepared by electrochemical codeposition. Potential step method was applied to prepare CoNi thin films with different composition which was controlled by varying the concentration ratio of Co2+/Ni2+ (x:y) in the deposition solution, thus this type of CoNi thin film was defined as CoNi(x:y). Nevertheless, CoNi thin films with different thickness and structure (denoted as CoNi(n)) were synthesized in a fixed Co2+/Ni2+ solution under cyclic voltammetric conditions by varying the cyclic numbers (n) within a defined potential range. AES and EDS analysis revealed that the atomic ratio of Co/Ni in the film (including both outer and inner layer) was in good accordance with the initial Co2+/Ni2+ ratio. XRD investigation indicated that the CoNi(20:0) and CoNi(15:5) thin films were hexagonal closed-packed (hcp) structure, however, the CoNi(10:10), CoNi(5:15) and CoNi(0:20) thin films were face centered cubic (fcc) structure. SEM studies demonstrated that the CoNi(x:y) thin films were uniformly composed of irregular nanoparticles. In the case of CoNi(n), with n increasing, the structure of nanoparticles inside the CoNi thin films underwent a transition from imperfectly spherical particles to multiform particles, and finally to irregular polyhedral particles, accompany with an increase of average size. In situ FTIR reflection spectroscopic studies demonstrated that the mainly chemisorbed CO species (COad) on CoNi(x:y) surfaces were transferred from linearly bonded CO (COL) to bridge bonded CO (COB) as a function of the content of Ni and the crystal phase structure of CoNi thin films. CoNi(x:y) and CoNi(n) thin films all exhibited anomalous IR properties, corresponding respectively to abnormal IR effects (AIREs), Fano-like IR effects and surface-enhanced IR absorption effects. AIREs characterized mostly with inversion of IR band was found on CoNi(x:y), CoNi(4), CoNi(8) thin films

  3. Electrodeposition behavior of nanocrystalline CoNiFe soft magnetic thin film

    Institute of Scientific and Technical Information of China (English)

    LI Jing-feng; ZHANG Zhao; YIN Jun-ying; YU Geng-hua; CAI Chao; ZHANG Jian-qing

    2006-01-01

    The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density (Bs>2.1 T) and low coercivity (Hc) was investigated using cyclic voltammetry and chronoamperometry methods in conjunction with the scanning electron microscopy (SEM/EDX). The results show that, under the experimental conditions, the co-deposition of CoNiFe film behaves anomalously due to the atomic radii of iron series elements following the order of rFe>rCo > rNi. In the case of lower electroplating current density, the co-deposition of CoNiFe film follows a 3-D progressive nucleation/growth mechanism,while in the case of higher electroplating current density, which follows a 3-D instantaneous nucleation/growth mechanism.Meanwhile, the change of nucleation mechanism of CoNiFe film with electroplating current density was interpreted theoretically in the light of quantum chemistry.

  4. Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

    OpenAIRE

    Shi C; Zhitomirsky I

    2010-01-01

    Abstract Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0–3 μm. Cyclic voltammetry data for the...

  5. Microstructure and magnetic properties of electrodeposited Gd-Co alloy films

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Gd-Co alloy films were synthesized by potentiostatic electrolysis on Cu substrates in urea-aeetamide-NaBr-KBr melt at 353 K.The electroreduction of Co2+ and Gd3+ was investigated by cyclic voltammetry.The reduction of Co2+ is an irreversible process.Gd3+ cannot be reduced alone,but it can be inductively co-deposited with Co2+.Both the Gd content and microstructure of the prepared Gd-Co alloy films can be controlled by the deposited potential.The content of Gd was analyzed using an inductively coupled plasma emission spectrometer(ICPES),and the microstructure was observed by scanning electron mierograph (SEM).The films were crystallized by heat-treatment at 823 K for 30 s in Ar atmosphere,and then were investigated by XRD.The hysteresis loops of the Gd-Co alloy films were measured by a vibrating sample magnetometer (VSM).The experimental results reveal that the deposited Gd-Co alloy films are amorphous,while the annealing causes the samples to change from amorphous to polycrystalline,thus enhancing their magnetoerystalline anisotropy and coercivity.Moreover,the magnetic properties of the Gd-Co alloy films depend strongly on the Gd content.

  6. 半导体硅上电沉积Cu/Co层状薄膜%Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon

    Institute of Scientific and Technical Information of China (English)

    刘冰; 龚正烈; 姚素薇; 郭鹤桐; 袁华堂; 张允什

    1999-01-01

    The Cu/Co layer film on the semiconductor silicon was obtained by electrodeposition for the first time. The results of current-time transient curves and STM image showed that the growth of Cu film is two dimensional while an island three dimension growth for the Co film was formed. The addition of CrO3 changed the current-time transient curves,and affected the growth of crystal.The addition of CrO3 decreased the nucleation rate of Cu,while it changed the shape of current-time transient curves of the deposition of Co at higher deposition potentials.For the deposition of Co,addition of CrO3 can form the adhesive film [Co· xCr2O3· yH2O]ad or [CoOH· nCr(OH)3]ad,which decreased the nucleation rate of Co.

  7. Fabrication of stable, large-area thin-film CdTe photovoltaic modules

    Science.gov (United States)

    Zhou, T. X.

    1995-06-01

    During the period of this subcontract, May 1991 through February 1995, Solar Cells, Inc. has developed and demonstrated a low-cost process to fabricate stable large-area cadmium telluride based thin-film photovoltaic modules. This report summarizes the final phase of the project which is concentrated on process optimization and product life tests. One of the major post-deposition process steps, the CdCl2 heat treatment, has been experimentally replaced with alternative treatments with vapor chloride or chlorine gas. Material and device qualities associated with alternative treatments are comparable or superior to those with the conventional treatment. Extensive experiments have been conducted to optimize the back-electrode structure in order to ensure long term device stability. Numerous small-area cells and minimodules have been subjected to a variety of stress tests, including but not limited to continuous light soak under open or short circuit or with resistive load, for over 10,000 hours. Satisfactory stability has been demonstrated on 48 and 64 sq cm minimodules under accelerated tests and on 7200 sq cm large modules under normal operating conditions. The conversion efficiency has also been significantly improved during this period. The total area efficiency of 7200 sq cm module has reached 8.4%, corresponding to a 60.3 W normalized output; the efficiency of 64 sq cm minimodules and 1.1 sq cm cells has reached 10.5% (aperture area) and 12.4% (total area), respectively.

  8. Preparation and Characterization of RF Magntron Sputtering CdTe Thin Film%CdTe薄膜的射频磁控溅射制备及表征

    Institute of Scientific and Technical Information of China (English)

    王波; 张静全; 王生浩; 冯良桓; 雷智; 武莉莉; 李卫; 黎兵; 曾广根

    2011-01-01

    The cadmium telluride thin film was deposited on glass substrate at room teperature by RF magnetron sputtering. The film was characterized to show the variation of its properties with the diverse deposition conditions by X-ray diffraction, UV-VIS spectrometer, scanning electrical microscope, etc. The result indicates that thc deposition speed increases with the increase of deposition power and decreases with the increase of pressure. As the pressure decreases, the CdTe film' s crystallinity gets worse. It is found that the cubic crystalline structure of deposited sample changes to the crystalline hexagonal CdTe phase as the power increased from 100 W to140 W. While the CdTe thin films is deposited under the pressure of 0.3 Pa, with the power of 100 W and at room temperature, the crystallinity is the best and the band gap is 1.45 eV.%采用射频磁控溅射技术制备了Cdre薄膜,使用探针式台阶仪、X射线衍射分析仪、紫外可见分光光度计、扫描电镜等表征了薄膜的厚度、结构、透过率、表面形貌等随溅射工艺的变化.结果表明:沉积速率随着功率的增加而增加,随气压的增加而呈线性减小;薄膜的结晶程度随气压增大而降低;功率从100W增大到180 W,出现了CdTe薄膜晶相从立方相向六方相的转变;当沉积条件为纯氩气氛、气压0.3Pa、功率100W、室温时,沉积的CdTe薄膜结晶性能最好.

  9. Effect of Y2O3 on microstructure and oxidation of γ-Ni+γ'-Ni3Al coatings transformed from electrodeposited Ni-Al films at 1 000 ℃

    Institute of Scientific and Technical Information of China (English)

    ZHOU Yue-bo; ZHANG Hai-jun; WANG Zhen-ting

    2008-01-01

    The electrodeposited Y2O3-dispersed γ-Ni+γ'-Ni3Al coatings on Ni substrates were developed by the conversion of electrodeposited Ni-Al-Y2O3 films with dispersed Al microparticles in Ni matrix into Ni3Al by vacuum annealing at 800 ℃ for 3 h. For comparison, Y2O3-free (γ-Ni+γ'-Ni3Al coatings with a similar Al content were also prepared by vacuum annealing the electrodeposited microparticle-dispersed composite coatings of Ni-Al under the same condition. SEM and TEM characterizations show that the electrodeposited Y2O3-dispersed γ+γ' coatings exhibit finer grains, a more homogeneous distribution of γ', and a narrowed γ' phase spacing compared with the electrodeposited Y2O3-free γ+γ' coatings. The oxidation at 1 000 ℃ shows that the addition of Y2O3 significantly improves the oxidation resistance of the electrodeposited γ+γ'coatings. The effect of Y2O3 particles on the microstructure and oxidation behavior of the electrodeposited γ+γ' coatings was discussed in detail.

  10. Elaboration of ammonia gas sensors based on electrodeposited polypyrrole--cobalt phthalocyanine hybrid films.

    Science.gov (United States)

    Patois, Tilia; Sanchez, Jean-Baptiste; Berger, Franck; Fievet, Patrick; Segut, Olivier; Moutarlier, Virginie; Bouvet, Marcel; Lakard, Boris

    2013-12-15

    The electrochemical incorporation of a sulfonated cobalt phthalocyanine (sCoPc) in conducting polypyrrole (PPy) was done, in the presence or absence of LiClO4, in order to use the resulting hybrid material for the sensing of ammonia. After electrochemical deposition, the morphological features and structural properties of polypyrrole/phthalocyanine hybrid films were investigated and compared to those of polypyrrole films. A gas sensor consisting in platinum microelectrodes arrays was fabricated using silicon microtechnologies, and the polypyrrole and polypyrrole/phthalocyanine films were electrochemically deposited on the platinum microelectrodes arrays of this gas sensor. When exposed to ammonia, polymer-based gas sensors exhibited a decrease in conductance due to the electron exchange between ammonia and sensitive polymer-based layer. The characteristics of the gas sensors (response time, response amplitude, reversibility) were studied for ammonia concentrations varying from 1 ppm to 100 ppm. Polypyrrole/phthalocyanine films exhibited a high sensitivity and low detection limit to ammonia as well as a fast and reproducible response at room temperature. The response to ammonia exposition of polypyrrole films was found to be strongly enhanced thanks to the incorporation of the phthalocyanine in the polypyrrole matrix.

  11. Cathodic electrodeposition of MnO {sub x} films for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Nagarajan, N. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ont., L8S 4L7 (Canada); Humadi, H. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ont., L8S 4L7 (Canada); Zhitomirsky, I. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ont., L8S 4L7 (Canada)]. E-mail: zhitom@mcmaster.ca

    2006-04-01

    Cathodic electrosynthesis has been utilized for the fabrication of MnO {sub x} films. The use of polyethylenimine (PEI) as an additive enabled the formation of adherent films, which exhibited enhanced resistance to cracking during drying. The polymer content in the deposits can be varied by the variation of the polymer concentration in the solutions. The mechanism of PEI deposition was proposed which is based on the use of PEI-Mn{sup 2+} complexes. The deposition yield has been studied at different deposition durations. X-ray diffraction analysis showed the crystallization of Mn{sub 3}O{sub 4} phase at 300 deg. C and Mn{sub 2}O{sub 3} at 500 deg. C. The electrochemical performance of the MnO {sub x} films sintered at different temperatures was studied by cyclic voltammetry (CV), chronopotentiometry and impedance spectroscopy in Na{sub 2}SO{sub 4} solutions. The films showed excellent pseudocapacitive behavior. The specific capacitance (SC) of 425 F/g in a potential window of 0-0.9 V was obtained from the CV data at a scan rate of 10 mV/s. The SC calculated from the chronopotentiometry data is about 445 F/g. The SC decreased by {approx}20% after 1000 cycles. SEM investigations revealed changes in the film morphology during cycling. Obtained results indicate that the proposed method can be used for the fabrication of electrodes for electrochemical supercapacitors.

  12. Cathodic electrodeposition of MnO{sub x} films for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Nagarajan, N.; Humadi, H.; Zhitomirsky, I. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ont. (Canada)

    2006-04-01

    Cathodic electrosynthesis has been utilized for the fabrication of MnO{sub x} films. The use of polyethylenimine (PEI) as an additive enabled the formation of adherent films, which exhibited enhanced resistance to cracking during drying. The polymer content in the deposits can be varied by the variation of the polymer concentration in the solutions. The mechanism of PEI deposition was proposed which is based on the use of PEI-Mn{sup 2+} complexes. The deposition yield has been studied at different deposition durations. X-ray diffraction analysis showed the crystallization of Mn{sub 3}O{sub 4} phase at 300{sup o}C and Mn{sub 2}O{sub 3} at 500{sup o}C. The electrochemical performance of the MnO{sub x} films sintered at different temperatures was studied by cyclic voltammetry (CV), chronopotentiometry and impedance spectroscopy in Na{sub 2}SO{sub 4} solutions. The films showed excellent pseudocapacitive behavior. The specific capacitance (SC) of 425F/g in a potential window of 0-0.9V was obtained from the CV data at a scan rate of 10mV/s. The SC calculated from the chronopotentiometry data is about 445F/g. The SC decreased by {approx} 20% after 1000 cycles. SEM investigations revealed changes in the film morphology during cycling. Obtained results indicate that the proposed method can be used for the fabrication of electrodes for electrochemical supercapacitors. (author)

  13. Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

    International Nuclear Information System (INIS)

    Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

  14. X-Ray Magnetic Circular Dichroism Measurement of Fe-Co Alloy Films Prepared by Electrodeposition

    Institute of Scientific and Technical Information of China (English)

    LI Zong-Mu; XU Fa-Qiang; WANG Li-Wu; WANG Jie; ZHU Jun-Fa; ZHANG Wen-Hua

    2007-01-01

    The macro- and micro-magnetic properties of Fe-Co alloy films eletrodeposited on GaAs(100) are studied by synchrotron radiation x-ray magnetic circular dichroism (XMCD) in combination with the magneto-optical Kerr effect (MOKE) measurements and magnetic force microscopy (MFM). The orbital and spin magnetic moments of each element in the Fe-Co alloy are determined by the sum rules of XMCD. Element-specific hysteresis loops (ESHL) are obtained by recording the La MCD signals as a function of applied magnetic field. MOKE results reveal that the amorphous films are magnetically isotropic in the surface plane. The MFM image shows that the dimension of the magnetic domains is about 1-2 μm, which is much larger than that of the grains, indicating that there are intergranular correlations among these grains. Both ESHL and MOKE hysteresis loops indicate the strong ferromagnetic coupling of Fe and Co in the alloy films.

  15. Preparation of Dy-Bi alloy films by electrodeposition in organic bath

    Institute of Scientific and Technical Information of China (English)

    LI Gaoren; TONG Yexiang; LIU Guankun

    2004-01-01

    The cyclic voltammetry and potentiostatic electrolysis were used to investigate the preparing of Dy-Bi alloy films in LiCl-DMSO (dimethylsulfoxide) system. The effects of several factors including the potential of deposition, concentrations of main salts, and the concentration ratio of DyCl3 to Bi(NO3)3 were studied. Dy-Bi alloy films containing 4.82%-80.62% (mass fraction) dysprosium were prepared in DyCl3-Bi(NO3)3-LiCl-DMSO system by controlling the system composition and deposition conditions. The films are gray, uniform, metallic luster and adhere firmly to the copper substrates analyzed by SEM (scanning electron microscope), EDS (X-ray energy dispersive analysis), and XRD (X-ray diffraction). After heat treatment at 718 K for l h, the alloy phase of Dy-Bi was found in XRD patterns.

  16. Electrodeposited Fe{sub (100-x)}Ga{sub x} thin films with high magnetostriction

    Energy Technology Data Exchange (ETDEWEB)

    Iselt, Diana; Schultz, Ludwig [IFW Dresden, Institute for Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany); TU Dresden, Faculty of Mechanical Engineering, 01062 Dresden (Germany); Schloerb, Heike; Faehler, Sebastian [IFW Dresden, Institute for Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany)

    2010-07-01

    Magnetostrictive materials can be used to build up electromagnetic sensing and actuating devices. A promising candidate to overcome the mechanical limitations of Terfenol-D is Fe{sub (100-x)}Ga{sub x} with 15 to 25 at.% Ga, which shows a high mechanical strength and low saturation fields. For the application as sensors thin films, ribbons and nanowires need to be produced in a cheap way over large areas. In this study a suitable deposition process for Fe-Ga alloy thin films has been developed using electrochemical pulse plating. By optimising the deposition parameters such as electrolyte composition, deposition potential, deposition time and pulse sequences, homogeneous (110)-oriented thin films with low oxygen content have been prepared. Preliminary investigations of magnetic properties correlated to magnetostriction are presented and discussed in sense of shape anisotropy.

  17. Oxidatively Electrodeposited Thin-Film Transition Metal (Oxy)hydroxides as Oxygen Evolution Catalysts.

    Science.gov (United States)

    Morales-Guio, Carlos G; Liardet, Laurent; Hu, Xile

    2016-07-20

    The electrolysis of water to produce hydrogen and oxygen is a simple and attractive approach to store renewable energies in the form of chemical fuels. The oxygen evolution reaction (OER) is a complex four-electron process that constitutes the most energy-inefficient step in water electrolysis. Here we describe a novel electrochemical method for the deposition of a family of thin-film transition metal (oxy)hydroxides as OER catalysts. The thin films have nanodomains of crystallinity with lattice spacing similar to those of double-layered hydroxides. The loadings of these thin-film catalysts were accurately determined with a resolution of below 1 μg cm(-2) using an electrochemical quartz microcrystal balance. The loading-activity relations for various catalysts were established using voltammetry and impedance spectroscopy. The thin-film catalysts have up to four types of loading-activity dependence due to film nucleation and growth as well as the resistance of the films. A zone of intrinsic activity has been identified for all of the catalysts where the mass-averaged activity remains constant while the loading is increased. According to their intrinsic activities, the metal oxides can be classified into three categories: NiOx, MnOx, and FeOx belong to category I, which is the least active; CoOx and CoNiOx belong to category II, which has medium activity; and FeNiOx, CoFeOx, and CoFeNiOx belong to category III, which is the most active. The high turnover frequencies of CoFeOx and CoFeNiOx at low overpotentials and the simple deposition method allow the fabrication of high-performance anode electrodes coated with these catalysts. In 1 M KOH and with the most active electrode, overpotentials as low as 240 and 270 mV are required to reach 10 and 100 mA cm(-2), respectively. PMID:27344954

  18. Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

    OpenAIRE

    Reyes Tolosa, María Dolores; Damonte, Laura Cristina; Brine, Hicham; Bolink, Henk J.; Hernández Fenollosa, María De Los Ángeles

    2013-01-01

    Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of ...

  19. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    Science.gov (United States)

    Yang, Xiaoyan; Liu, Bo; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-03-01

    A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with VOC of 772.92 mV, JSC of 25.11 mA/cm2 and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  20. Preparation and characterization of CuInSe{sub 2} electrodeposited thin films annealed in vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Hamrouni, S., E-mail: sahbihamrouni82@yahoo.fr [College of Science and Art at Rass-Qassim University, PO Box 53 Postcode 51921 (Saudi Arabia); Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); AlKhalifah, Manea S. [College of Science and Art at Rass-Qassim University, PO Box 53 Postcode 51921 (Saudi Arabia); Boujmil, M.F. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); Saad, K. Ben [College of Science and Art at Rass-Qassim University, PO Box 53 Postcode 51921 (Saudi Arabia); Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia)

    2014-02-15

    The effect of the annealing temperature on the CuInSe{sub 2} (CIS) electrodeposed films on FTO substrates has been investigated. Followed by different annealing, in vacuum and for different temperatures, X-ray diffraction has proved that the CuInSe{sub 2} films have chalcopyrite structure oriented along the (1 1 2) direction with good crystallinity at 400 °C. From the evolution of the full width at half maximum (FWHM) of the (1 1 2) peak, we have estimated the grain size versus the annealing temperature. The results show that the grain size increases from 0.45 to 0.75 μm with the annealing temperature. The morphological, optical and electrical properties of the CIS films have been investigated respectively, by the scanning electron microscopy (SEM), UV–vis spectroscopy and I–V characteristics. The band gaps of the CIS films also shows an evolution when the temperature is varied. In fact the band gap decreases from 1.24 eV at 250 °C to 0.98 eV at 450 °C. The electrical characterization of the junction Al/CIS/FTO shows an interesting Schottky rectifying behavior.

  1. High quality electrodeposited Fe{sub 100-x}Ga{sub x} films for magnetostrictive applications

    Energy Technology Data Exchange (ETDEWEB)

    Iselt, Diana; Schultz, Ludwig [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, 01171 Dresden (Germany); TU Dresden, Faculty of Mechanical Engineering, 01062 Dresden (Germany); Schloerb, Heike; Faehler, Sebastian [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, 01171 Dresden (Germany)

    2011-07-01

    Magnetostrictive materials can be used to build electromagnetic sensing and actuating devices. A promising candidate to overcome the mechanical limitations of Terfenol-D is Fe{sub 100-x}Ga{sub x} with 15 to 25 at.% Ga, which exhibits high mechanical strength and low saturation fields. For sensor application an efficient, scalable preparation way is required for thin film and nanowire fabrication. In this study FeGa alloy films with a desired composition close to Fe{sub 80}Ga{sub 20} have been fabricated electrochemically on Pt substrates. For a conventional deposition at constant potentials strong interactions of the electrolyte with the platinum coated substrate are identified to cause low reproducibility and high oxygen content. The use of optimised pre-treatment and pulsed potential conditions resulted in dense and homogeneous films with a (110) {alpha}-Fe{sub 3}Ga fibre texture. Oxygen content was reduced below 1 at.% and the saturation magnetization reaches up to 1.7 T, confirming the high quality of these films. In order to understand the influence of the substrate on morphology and oxygen content deposition on gold and copper coated substrates have been carried out.

  2. Flexible polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  3. Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution

    Energy Technology Data Exchange (ETDEWEB)

    Riveros, G.; Guillemoles, J.F.; Lincot, D. [Laboratoire d' Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 (France); Gomez Meier, H. [Instituto de Chimica, Faculdad de Ciencas Basicas y Matematicas, Universidad Catolica de Valparaiso, Avda. Brasil 2950, Casila, Valparaiso (Chile); Froment, M.; Bernard, M.C.; Cortes, R. [Laboratoire de Physique des Liquides et Electrochimie (UPR CNRS 15), Universite Pierre et Marie Curie, 4 place Jussieu, F-75232 Paris Cedex 05 (France)

    2002-09-16

    Epitaxial growth of ZnSe thin films on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (-1.6-1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflective high energy electron diffraction (see Figure for a ZnSe epitaxial layer) and grazing angle X-ray diffraction. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  4. Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Christian Dunkel

    2014-04-01

    Full Text Available Well-ordered 3D mesoporous indium tin oxide (ITO films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs. Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene-b-poly(ethylene oxide block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.

  5. Electrodeposition and characterisation of lead tin superconducting films for application in heavy ion booster

    Science.gov (United States)

    Lobanov, Nikolai R.

    2015-12-01

    The ANU has developed experimental systems and procedures for lead-tin (PbSn) film deposition and characterisation. The 12 split loop resonators have been electroplated with 96%Pb4%Sn film to the final thickness of 1.5 micron using methanesulfonic acid (MSA) chemistry. As a result, an average acceleration field of 3.6 MV/m off-line at 6 W rf power was achieved at extremely low technological cost. Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Heavy Ion Elastic Detection Analyses (HIERDA), Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS) and Electron Backscattering Diffraction (EBSD) revealed correlation between the substrate and film structure, morphology and the rf performance of the cavity. The PbSn plating, exercised on the existing split loop resonators (SLR), has been extended to the two stub quarter wave resonator (QWR) as a straightforward step to quickly explore the superconducting performance of the new geometry. The oxygen free copper (OHFC) substrate for two stub QWR was prepared by reverse pulse electropolishing. The ultimate superconducting properties and long-term stability of the coatings have been assessed by operation of the ANU superconducting linac over the last few years.

  6. Thin film solar cells based on CdTe and Cu(In,Ga)Se{sub 2} (CIGS) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Gladyshev, P P [International University of Nature, Society and Man ' Dubna' , Dubna (Russian Federation); Filin, S V; Puzynin, A I; Tanachev, I A; Rybakova, A V; Tuzova, V V; Kozlovskiy, S A [Center of High Technologies of FSUE ' Applied Acoustics Research Institute' , Dubna (Russian Federation); Gremenok, V F; Mudryi, A V; Zaretskaya, E P [State Scientific and Production Association ' Scientific-Practical Materials, Researcher Center of National Academy of Sciences of Belarus' , Minsk (Belarus); Zalesskiy, V B; Kravchenko, V M; Leonova, U R; Khodin, A A; Pilipovich, V A; Polikanin, A M [Institute of Physics of National Academy of Sciences of Belarus, Minsk (Belarus); Khrypunov, G S; Chernyh, E P; Kovtun, N A [National Technical University ' Kharkov Politechnical Institute' , Kharkov (Ukraine); Belonogov, E K, E-mail: pavel.gladyshev@niipa.ru [Voronej State Technical University, Voronej (Russian Federation)

    2011-04-01

    We are publishing recent results in chalcogenide photoelectric convertors fabrication, which are efforts of many scientific teams from Russia, Belarus, Ukraine, and Kazakhstan. Competitively high efficiency of photoelectric convertors (11.4% for CdTe and 11% for CIGS) was achieved in the process of our work. Furthermore, luminescent filters for improvement of spectral response of such chalcogenide solar cells in a short wavelengths region were also developed and investigated here.

  7. The mechanism of cathodic electrodeposition of epoxy coatings and the corrosion behaviour of the electrodeposited

    OpenAIRE

    VESNA B. MISKOVIC-STANKOVIC

    2002-01-01

    The model of organic film growth on a cathode during electrodeposition process proposes the current density-time and film thickness-time relationships and enables the evaluation of the rate contants for the electrochemical reaction of OH ion evolution and for the chemical reaction of organic film deposition. The dependences of film thickness and rate constants on the applied voltage, bath temperature and resin concentration in the electrodeposition bath have also been obtained. The deposition...

  8. Structural and optical properties of electrodeposited culnSe{sub 2} thin films for photovoltaic solar cells; Propiedades estructurales y opticas de laminas delgadas de CulnSe2 electrodepositadas para su aplicacion en celulas solares fotovoltaicas

    Energy Technology Data Exchange (ETDEWEB)

    Guillen, C.; Herrero, J.; Galiano, F.

    1990-07-01

    Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs.

  9. A Study on the Electrodeposited Cu-Zn Alloy Thin Films

    Science.gov (United States)

    Özdemir, Rasim; Karahan, İsmail Hakkı; Karabulut, Orhan

    2016-11-01

    In this article, electrochemical deposition of the nanocrystalline Cu1- x Zn x alloys on to aluminum substrates from a non-cyanide citrate electrolyte at 52.5, 105, 157.5, and 210 A m-2 current densities were described. The bath solution of the Cu1- x Zn x alloys consisted of 0.08 mol L-1 CuSO4·5H2O, 0.2 mol L-1 ZnSO4·7H2O, and 0.5 mol L-1 Na3C6H5O7. The effect of the current density on the microstrain, grainsize, phase structure, and DC electrical resistivity behavior was investigated. The electrolyte was investigated electrochemically by cyclic voltammetry (CV) studies. A scanning electron microscope (SEM) was used to study the morphologies of the deposits. Deposited alloys were investigated by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and four-point probe electrical resistivity techniques. With an increase in applied current density values from 52.5 to 210 A m-2, the amount of deposited copper in the alloy was decreased significantly from 65.5 to 16.6 pct and zinc increased from 34.4 to 83.4 pct. An increase in the current density was accompanied by an increase in grain size values from 65 to 95 nm. SEM observations indicated that the morphology of the film surface was modified to bigger grained nanostructures by increasing the current density. The XRD analysis showed alloys have a body-centered cubic (bcc) crystal structure with preferential planes of (110) and (211). Furthermore, four-point measurements of the films revealed that the resistivity of the deposited films was tailored by varying current densities in the electrolyte.

  10. Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Torres, Jose, E-mail: jm.garcia@ub.ed [Electrodep., Departament de Quimica Fisica and Institut de Nanociencia i Nanotecnologia (IN2UB) de la Universitat de Barcelona, Marti i Franques, 1, 08028 Barcelona (Spain); Valles, Elisa; Gomez, Elvira [Electrodep., Departament de Quimica Fisica and Institut de Nanociencia i Nanotecnologia (IN2UB) de la Universitat de Barcelona, Marti i Franques, 1, 08028 Barcelona (Spain)

    2010-10-15

    The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR(H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

  11. XPS Study of CdTe Thin Films Doped with Gd%掺Gd-CdTe薄膜的XPS研究

    Institute of Scientific and Technical Information of China (English)

    安晓晖; 李蓉萍; 田磊; 何志刚; 吴蓉; 李忠贤

    2012-01-01

    CdTe thin film doped with Gd has been obtained by vacuum evaporation technique with two sources , and chemical state has been studied by X-ray photo-electron spectroscopy. XPS data show that Cd,Te,O,C and Gd elements exist on the surface of the film. C1s and O1s binding energy indicates that the two elements mainly exist in the form of physical adsorption. The experiment results show that Cd and Te atoms exist in oxidation state as in well as in CdTe. Due to carbon pol-lution, Gd element does not appear on the surface, only appears in the etching process. Erosion analysis shows the Cd element s content is greater than Te, and the ratio between them tends to 1:0. 8.%应用双源法真空蒸发制备掺Gd的CdTe薄膜,并借助XPS对其进行组份分析.实验表明,Gd掺杂的CdTe薄膜的组分为Cd、Te、O、C、Gd等元素,其中C、O主要以物理吸附方式存在于薄膜表面;Cd、Te元素的存在方式为CdTe化合物及其氧化物形式;而Gd元素由于碳污染的原因在其表面未曾出现,只在刻蚀过程中出现;深度剥蚀分析表明在样品内部Cd元素的含量大于Te元素的含量,且接近于1∶0.8,趋于稳定.

  12. Low-temperature electrodeposition approach leading to robust mesoscopic anatase TiO2 films.

    Science.gov (United States)

    Patra, Snehangshu; Andriamiadamanana, Christian; Tulodziecki, Michal; Davoisne, Carine; Taberna, Pierre-Louis; Sauvage, Frédéric

    2016-02-25

    Anatase TiO2, a wide bandgap semiconductor, likely the most worldwide studied inorganic material for many practical applications, offers unequal characteristics for applications in photocatalysis and sun energy conversion. However, the lack of controllable, cost-effective methods for scalable fabrication of homogeneous thin films of anatase TiO2 at low temperatures (ie. < 100 °C) renders up-to-date deposition processes unsuited to flexible plastic supports or to smart textile fibres, thus limiting these wearable and easy-to-integrate emerging technologies. Here, we present a very versatile template-free method for producing robust mesoporous films of nanocrystalline anatase TiO2 at temperatures of/or below 80 °C. The individual assembly of the mesoscopic particles forming ever-demonstrated high optical quality beads of TiO2 affords, with this simple methodology, efficient light capture and confinement into the photo-anode, which in flexible dye-sensitized solar cell technology translates into a remarkable power conversion efficiency of 7.2% under A.M.1.5G conditions.

  13. Low-temperature electrodeposition approach leading to robust mesoscopic anatase TiO2 films

    Science.gov (United States)

    Patra, Snehangshu; Andriamiadamanana, Christian; Tulodziecki, Michal; Davoisne, Carine; Taberna, Pierre-Louis; Sauvage, Frédéric

    2016-02-01

    Anatase TiO2, a wide bandgap semiconductor, likely the most worldwide studied inorganic material for many practical applications, offers unequal characteristics for applications in photocatalysis and sun energy conversion. However, the lack of controllable, cost-effective methods for scalable fabrication of homogeneous thin films of anatase TiO2 at low temperatures (ie. smart textile fibres, thus limiting these wearable and easy-to-integrate emerging technologies. Here, we present a very versatile template-free method for producing robust mesoporous films of nanocrystalline anatase TiO2 at temperatures of/or below 80 °C. The individual assembly of the mesoscopic particles forming ever-demonstrated high optical quality beads of TiO2 affords, with this simple methodology, efficient light capture and confinement into the photo-anode, which in flexible dye-sensitized solar cell technology translates into a remarkable power conversion efficiency of 7.2% under A.M.1.5G conditions.

  14. Low-temperature electrodeposition approach leading to robust mesoscopic anatase TiO2 films

    Science.gov (United States)

    Patra, Snehangshu; Andriamiadamanana, Christian; Tulodziecki, Michal; Davoisne, Carine; Taberna, Pierre-Louis; Sauvage, Frédéric

    2016-02-01

    Anatase TiO2, a wide bandgap semiconductor, likely the most worldwide studied inorganic material for many practical applications, offers unequal characteristics for applications in photocatalysis and sun energy conversion. However, the lack of controllable, cost-effective methods for scalable fabrication of homogeneous thin films of anatase TiO2 at low temperatures (ie. plastic supports or to smart textile fibres, thus limiting these wearable and easy-to-integrate emerging technologies. Here, we present a very versatile template-free method for producing robust mesoporous films of nanocrystalline anatase TiO2 at temperatures of/or below 80 °C. The individual assembly of the mesoscopic particles forming ever-demonstrated high optical quality beads of TiO2 affords, with this simple methodology, efficient light capture and confinement into the photo-anode, which in flexible dye-sensitized solar cell technology translates into a remarkable power conversion efficiency of 7.2% under A.M.1.5G conditions.

  15. Low-temperature electrodeposition approach leading to robust mesoscopic anatase TiO2 films.

    Science.gov (United States)

    Patra, Snehangshu; Andriamiadamanana, Christian; Tulodziecki, Michal; Davoisne, Carine; Taberna, Pierre-Louis; Sauvage, Frédéric

    2016-01-01

    Anatase TiO2, a wide bandgap semiconductor, likely the most worldwide studied inorganic material for many practical applications, offers unequal characteristics for applications in photocatalysis and sun energy conversion. However, the lack of controllable, cost-effective methods for scalable fabrication of homogeneous thin films of anatase TiO2 at low temperatures (ie. < 100 °C) renders up-to-date deposition processes unsuited to flexible plastic supports or to smart textile fibres, thus limiting these wearable and easy-to-integrate emerging technologies. Here, we present a very versatile template-free method for producing robust mesoporous films of nanocrystalline anatase TiO2 at temperatures of/or below 80 °C. The individual assembly of the mesoscopic particles forming ever-demonstrated high optical quality beads of TiO2 affords, with this simple methodology, efficient light capture and confinement into the photo-anode, which in flexible dye-sensitized solar cell technology translates into a remarkable power conversion efficiency of 7.2% under A.M.1.5G conditions. PMID:26911529

  16. Effects of glycine and current density on the mechanism of electrodeposition, composition and properties of Ni-Mn films prepared in ionic liquid

    Science.gov (United States)

    Guo, Jiacheng; Guo, Xingwu; Wang, Shaohua; Zhang, Zhicheng; Dong, Jie; Peng, Liming; Ding, Wenjiang

    2016-03-01

    The effects of glycine on the mechanism of electrodeposition of Ni-Mn alloy film prepared in ChCl-urea ionic liquid were studied in order to control the composition, microstructure and properties of the film. The cyclic voltammograms revealed that the presence of glycine in the ionic liquid can inhibit the reduction of Ni2+ ions but promote the reduction of Mn2+ ions in the cathodic scan. However, it promoted the dissolution of both Ni and Mn deposits in the ChCl-urea ionic liquids during the reverse scan. Glycine changed the mode of Ni-Mn film growth from Volmer-Weber mode into Stranski-Krastanov mode. The Mn content in the Ni-Mn film increased with the increase of concentration of glycine and current density. The Ni-Mn alloy film with 3.1 at.% Mn exhibited the lowest corrosion current density of 3 × 10-7 A/cm2 compared with other films prepared and exhibited better corrosion resistance than pure Ni film in 3.5 wt.% NaCl solution.

  17. Characterization of electrodeposited coatings containing niobium

    International Nuclear Information System (INIS)

    The role of metallurgically processed niobium in the applications of superconductivity has remained supreme for the past two decades. Niobium coatings electrodeposited at room temperature can potentially afford certain advantages over those metallurgically prepared. These advantages include the ability to form a superconductive thin film on a substrate of unconventional geometry, a lower incidence of thermally induced film defects compared to those prepared at high temperatures, and the ability to control the grain size via electrochemical parameters. In this paper, microscopic and spectroscopic techniques are used to characterize the film electrodeposited from various halide-containing niobium complexes in organic solvents. Scanning electron microscope is used to examine the microstructure of the electrodeposit, and the ancillary technique of energy dispersive X-ray fluorescence determines the elemental composition. In general, the choice of organic solvent for electrodeposition plays a key role in determining the film thickness, uniformity, homogeneity, smoothness, grain size, and the presence of strain-induced cracks in the film

  18. Characterization of CdS thin films electrodeposited by an alternating current electrolysis method

    International Nuclear Information System (INIS)

    Conventional electrochemical methods of making CdS films are anodic oxidation of cadmium in a solution containing sulfide ions, and cathodic reduction from solutions containing soluble metal and sulfur compounds. In this paper a method is presented in which a CdS layer is deposited by a.c. electrolysis. The substrate is a glass plate covered by a layer of tin oxide. The electrolyte is an aqueous solution containing cadmium sulphate, ammonium sulphate, sodium thiosulphate, sodium chloride and glycerol. The applied a.c. voltages correspond to symmetrical and asymmetrical rectangular waves. During the electrolysis two electrodes are alternately connected to positive and negative potentials. As a result, Cd/sup 2+/ and S/sup 2-/ particles deposit at each electrode by turns, which results in the formation of a CdS layer

  19. Preparation of Er-Fe Alloy Films in Dimethylsulfoxide by Electrodeposition Method

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Cyclic voltammetry and chronoamperometry were used to investigate the electrochemical behavior of Fe(Ⅱ) and Er(Ⅲ) in a LiClO4-DMSO(dimethylsufoxide) system at Pt and Cu electrodes. Experimental results indicate that the reductions of Fe(Ⅱ) to Fe(0) and Er(Ⅲ) to Er(0) were irreversible at Pt and Cu electrodes. The diffusion coefficient and the electron transfer coefficient of Fe(Ⅱ) in a 0.01 mol/L FeCl2-0.1 mol/L LiClO4-DMSO system at 303 K were 1.70×10-10 m2/s and 0.08 respectively, the diffusion coefficient and the electron transfer coefficient of Er(Ⅲ) in a 0.01 mol/L ErCl3-0.1mol/L LiClO4-DMSO system at 303 K were 1.47×10-10 m2/s and 0.108 respectively. The homogeneous, strong adhesive Er-Fe alloy films containing Er of 31.39%-42.12% in mass fraction with metallic lustre were prepared by potentiostatic electrolysis on a Cu electrode in a ErCl3-FeCl2-LiClO4-DMSO system at -1.75--2.50 V(vs. SCE).

  20. Electrodeposition of Fe-Ni-S Soft Magnetic Film%Fe-Ni-S软磁薄膜的电沉积

    Institute of Scientific and Technical Information of China (English)

    王森林; 宋运建

    2011-01-01

    酸性镀液中以硼酸为缓冲剂、柠檬酸三钠为配合剂,在紫铜箔上电沉积得到非晶Fe-Ni-s合金薄膜.采用扫描电子显微镜和能谱分析技术(EDS)研究了镀液组成和沉积条件对镀层表面形貌和组成的影响.结果表明,在镀液中加入2 g/L C2H5O3NS(糖精)和0.4 g/L 1,4-丁炔二醇可获得表面平整无裂缝和较小内应力的合金镀层;电流密度和镀液pH值对镀层组成影响较小,但施镀温度对镀层组成影响较大.获得了理想的镀液组成和沉积条件,所得Fe73Ni95S175薄膜的X射线衍射表明其为非晶结构,在室温下具有较高的饱和磁化强度(Ms约为876.25 kA/m)和较低的矫顽力(Hc约为4.96 kA/m),具有良好的软磁性能.循环伏安曲线和阴极极化曲线均表明,镀液中CS(NH2)2会促进Fe-Ni-S共沉积.%Fe-Ni-S alloy film was prepared on red copper foil by electrodeposition from a acidic bath containing boric acid as a buffer agent and sodium citrate as a complexing agent. The effects of the bath composition, and the deposition parameters on the surface morphology and the composition of the alloy coating were studied by SEM and EDS. As a result, a smooth coating with no crack and little stress was obtained from the plating bath by adding 2 g/L saccharin and 0.4 g/L 1,4-butynediol. The cathodic current density and the plating bath pH have little effect on the coating composition, but the temperature has great effect. Fe73Ni9.5S17.5 film was prepared in optimized plating conditions, and XRD analysis showed that the coating structure is amorphous. The film has good soft magnetic performances with higher saturation magnetization (Ms≈876. 25 kA/m) and lower coercivity(Hc≈4. 96 kA/m) at room temperature. Cyclic voltammetry and the cathodic polarization curves indicated that thiourea can promote the co-deposition of Fe-Ni-S alloy.

  1. Characterisation, corrosion resistance and in vitro bioactivity of manganese-doped hydroxyapatite films electrodeposited on titanium.

    Science.gov (United States)

    Huang, Yong; Ding, Qiongqiong; Han, Shuguang; Yan, Yajing; Pang, Xiaofeng

    2013-08-01

    This work elucidated the corrosion resistance and in vitro bioactivity of electroplated manganese-doped hydroxyapatite (MnHAp) film on NaOH-treated titanium (Ti). The NaOH treatment process was performed on Ti surface to enhance the adhesion of the MnHAp coating on Ti. Scanning electron microscopy images showed that the MnHAp coating had needle-like apatite crystals, and the approximately 10 μm thick layer was denser than HAp. Energy-dispersive X-ray spectroscopy analysis revealed that the MnHAp crystals were Ca-deficient and the Mn/P molar ratio was 0.048. X-ray diffraction confirmed the presence of single-phase MnHAp, which was aligned vertically to the substrate. Fourier transform infrared spectroscopy indicated the presence of phosphate bands ranging from 500 to 650 and 900 to 1,100 cm(-1), and a hydroxyl band at 3,571 cm(-1), which was characteristic of HAp. Bond strength test revealed that adhesion for the MnHAp coating was more enhanced than that of the HAp coating. Potentiodynamic polarisation test showed that the MnHAp-coated surface exhibited superior corrosion resistance over the HAp single-coated surface. Bioactivity test conducted by immersing the coatings in simulated body fluid showed that MnHAp coating can rapidly induce bone-like apatite nucleation and growth. Osteoblast cellular tests revealed that the MnHAp coating was better at improving the in vitro biocompatibility of Ti than the HAp coating. PMID:23686354

  2. Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

    Science.gov (United States)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-10-01

    Zinc sulfide (ZnS) thin films were prepared on indium tin oxide-coated glass by electrodeposition using aqueous zinc sulfate, thiourea, and ammonia solutions at 80°C. The effects of sulfurization at temperatures of 350°C, 400°C, 450°C, and 500°C on the morphological, structural, optical, and electrical properties of the ZnS thin films were investigated. X-ray diffraction analysis showed that the ZnS thin films exhibited cubic zincblende structure with preferred (111) orientation. The film crystallization improved with increasing annealing temperature. Field-emission scanning electron microscopy images showed that the film morphology became more compact and uniform with increasing annealing temperature. The percentage of sulfur in the ZnS thin films increased after sulfurization until a stoichiometric S/Zn ratio was achieved at 500°C. The annealed films showed good adhesion to the glass substrates, with moderate transmittance (85%) in the visible region. Based on absorption measurements, the direct bandgap increased from 3.71 eV to 3.79 eV with annealing temperature, which is attributed to the change of the buffer material composition and suitable crystal surface properties for effective p- n junction formation. The ZnS thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 1.86%.

  3. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules Annual Technical Report, Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Powell, R.C.; Karpov, V.; Grecu, D.; Jayamaha, U.; Dorer, G.L. (First Solar, L.L.C.)

    2001-02-05

    Results and conclusions from Phase II of a three-year subcontract are presented. The subcontract, entitled Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules, is First Solar's portion of the Thin-Film Photovoltaic Partnership Program. The research effort of this subcontract is divided into four areas of effort: (1) process and equipment development, (2) efficiency improvement, (3) characterization and analysis, and (4) environmental, health, and safety. As part of the process and equipment development effort, a new semiconductor deposition system with a throughput of 3 m2/min was completed, and a production line in a new 75,000 ft2 facility was started and is near completion. As part of the efficiency-improvement task, research was done on cells and modules with thin CdS and buffer layers as way to increase photocurrent with no loss in the other photovoltaic characteristics. A number of activities were part of the characterization and analysis task, including developing a new admittance spectroscopy system, with a range of 0.001 Hz to 100 kHz, to characterize cells. As part of the environmental, health, and safety task, the methanol-based CdCl2 process was replaced with aqueous-CdCl2. This change enabled the retention of a De Minimus level of emissions for the manufacturing plant, so no permitting is required.

  4. Electrochemical Properties of Porous Co(OH){sub 2} Nano-flake Thin Film Prepared by Electro-deposition for Supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeon Jeong; Jin, En Mei; Jeong, Sang Mun [Chungbuk National University, Cheongju (Korea, Republic of)

    2016-04-15

    Porous Co(OH){sub 2} nano-flake thin films were prepared by a potential-controlled electro-deposition technique at various deposition voltage (−0.75, −1.0, −1.2, and −1.4 V) on Ti-mesh substrates for supercapacitor application. The potential of electrode was controlled to regulate the film thickness and the amount of Co(OH){sub 2} nano-flake on the titanium substrate. The film thickness was shown to reach the maximum value of 34 μm at −1.4 V of electrode potential, where 17.2 g of Co(OH){sub 2} was deposited on the substrate. The specific discharge capacitances were measured to be 226, 370, 720, and 1008 mF cm{sup -2} in the 1st cycle corresponding to the films which were formed at −0.75, −1.0, −1.2, and −1.4 V of electrode potentials, respectively. Then the discharge capacities were decreased to be 206, 349, 586 and 866 mF/cm{sup 2}, where the persistency rates were 91, 94, 81, and 86%, respectively.

  5. Conditions for the deposition of CdTe by electrochemical atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gregory, B.W.; Suggs, D.W.; Stickney, J.L. (School of Chemical Sciences, Univ. of Georgia, Athens, GA (US))

    1991-05-01

    In this paper the method of electrochemical atomic layer epitaxy (ECALE) is described. It involves the alternated electrochemical deposition of atomic layers of elements to form compound semiconductors. It is being investigated as a method for forming epitaxial thin films. Presently, it appears that the method is applicable to a wide range of compound semiconductors composed of a metal and one of the following main group elements: S, Se, Te, As, Sb, or Br. Initial studies have involved CdTe deposition. Factors controlling deposit structure and composition are discussed here. Preliminary results which show that ordered electrodeposits of CdTe can be formed by the ECALE method are also presented. Results reported here were obtained with both a polycrystalline Au thin-layer electrochemical cell and a single-crystal Au electrode with faces oriented to the (111), (110), and (100) planes. The single-crystal electrode was contained in a UHV surface analysis instrument with an integral electrochemical cell. Deposits were examined without their exposure to air using LEED and Auger electron spectroscopy. Coverages were determined using coulometry in the thin-layer electrochemical cell.

  6. Influence of water-soluble conjugated/non-conjugated polyelectrolytes on electrodeposition of nanostructured MnO{sub 2} film for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Eun-Kyung; Shrestha, Nabeen K. [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Wonjoo [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Defense Ammunitions, Daeduk College, Daejeon 305-715 (Korea, Republic of); Cai, Gangri, E-mail: caigangri@naver.com [Department of Applied Chemistry, TianJin University of Technology, Tianjin 300384 (China); Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Han, Sung-Hwan, E-mail: shhan@hanyang.ac.kr [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-01

    Manganese dioxide (MnO{sub 2}) thin films are deposited electrochemically on an indium–tin-oxide (ITO) electrode using aqueous bath in presence of conjugated water soluble sulfonated polyaniline (SPAN) or a non-conjugated polyacrylic acid (PAA) polyelectrolyte surfactant. The surface morphology and nature of the electrodeposited MnO{sub 2} films are found to be influenced strongly by the amount and type of polyelectrolyte in the deposition bath. Increasing the SPAN concentration, a porous structure resulting from the reduction of voids between the MnO{sub 2} nano-flakes is obtained. In contrast, by increasing the PAA concentration, dense and spherical MnO{sub 2} nanostructures have been deposited. These results may be caused by initiation of different kinetics and orientation of nucleation of MnO{sub 2} deposits on ITO surface in presence of different types of polyelectrolytes. Cyclic voltammetry study of these films shows the supercapacitor behavior. The porous MnO{sub 2} films grown from the SPAN containing electrolyte demonstrates a specific capacitance of 368.53 F/g at scan rate of 10 mV/s, which is approximately 10 times higher (i.e., 30.29 F/g) than that of the spherical MnO{sub 2} dense films grown from PAA containing electrolyte. - Highlights: • Conjugated/non-conjugated polyelectrolytes were used in deposition of MnO{sub 2}. • The two kinds of MnO{sub 2} film showed entirely different morphology. • Conjugated polyelectrolyte worked as template and also affected the growth rate. • Non-conducting polyelectrolyte could work as template but hindered MnO{sub 2} growth. • The specific capacitance of MnO{sub 2}–S was 10 times higher than MnO{sub 2}–P.

  7. Influence of water-soluble conjugated/non-conjugated polyelectrolytes on electrodeposition of nanostructured MnO2 film for supercapacitors

    International Nuclear Information System (INIS)

    Manganese dioxide (MnO2) thin films are deposited electrochemically on an indium–tin-oxide (ITO) electrode using aqueous bath in presence of conjugated water soluble sulfonated polyaniline (SPAN) or a non-conjugated polyacrylic acid (PAA) polyelectrolyte surfactant. The surface morphology and nature of the electrodeposited MnO2 films are found to be influenced strongly by the amount and type of polyelectrolyte in the deposition bath. Increasing the SPAN concentration, a porous structure resulting from the reduction of voids between the MnO2 nano-flakes is obtained. In contrast, by increasing the PAA concentration, dense and spherical MnO2 nanostructures have been deposited. These results may be caused by initiation of different kinetics and orientation of nucleation of MnO2 deposits on ITO surface in presence of different types of polyelectrolytes. Cyclic voltammetry study of these films shows the supercapacitor behavior. The porous MnO2 films grown from the SPAN containing electrolyte demonstrates a specific capacitance of 368.53 F/g at scan rate of 10 mV/s, which is approximately 10 times higher (i.e., 30.29 F/g) than that of the spherical MnO2 dense films grown from PAA containing electrolyte. - Highlights: • Conjugated/non-conjugated polyelectrolytes were used in deposition of MnO2. • The two kinds of MnO2 film showed entirely different morphology. • Conjugated polyelectrolyte worked as template and also affected the growth rate. • Non-conducting polyelectrolyte could work as template but hindered MnO2 growth. • The specific capacitance of MnO2–S was 10 times higher than MnO2–P

  8. Doping studies of spray-deposited CdTe films. [CdTe:In; CdTe:Na

    Energy Technology Data Exchange (ETDEWEB)

    Berry, A.K. (Electrical and Computer Engineering Dept., George Mason Univ., Fairfax, VA (USA))

    1991-04-01

    The results of doping spray-deposited cadmium telluride films on glass substrates are reported. The films were 1-4 {mu}m thick, displayed excellent adhesion to the substrate and possessed good surface morphology. The doping was achieved by incorporating the dopant source into the spraying solution. The films doped with indium and sodium show a decrease in resistivity by a factor of 100 with respect to the resistivity of undoped films grown under similar conditions. Attempts to dope with caesium and phosphorus were not satisfactory. Transport measurements were performed and they were found to be influenced significantly by the built-in potential at the grain boundaries. (orig.).

  9. Electrochemical deposition and characterization of phosphorous doped p-CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Balakrishnan, K.S.; Rastogi, A.C. (National Physical Lab., New Delhi (India))

    1991-11-01

    An electrodeposition process for formation of low resistivity phosphorous doped p-type CdTe films is described. The deposition is carried out in organic electrolyte which enables ionic doping by phosphorous in situ with the growth of CdTe films. Te to P atomic ratios in the film, their electrolytic concentrations and activation energy analysis establishes that p-conversion is due to acceptor states at E{sub v} +0.05 eV formed by P atoms selectively occupying Te sites in CdTe. The lower resistivity limit of 5-10 {Omega} cm of p-CdTe films is set by generation of interstitial P related defects if the P concentration exceeds a threshold value of 6x10{sup -4} M. Analysis of space charge limited current transport in these films establishes hole concentrations of 8x10{sup 16} cm{sup -3} and associated low defect densities around 9x10{sup 14} cm{sup -3} obtained through good stoichiometric control inherent to this technique. Codeposition of P modifies nucleation and growth, resulting in p-CdTe films having hexagonal structure and oriented crystallites of over 0.8 {mu}m grain size. Due to these properties p-CdTe films are well suited for application to solar cells. (orig.).

  10. Electrochemical impedance analysis of electrodeposited Si-O-C composite thick film on Cu microcones-arrayed current collector for lithium ion battery anode

    Science.gov (United States)

    Hang, Tao; Mukoyama, Daikichi; Nara, Hiroki; Yokoshima, Tokihiko; Momma, Toshiyuki; Li, Ming; Osaka, Tetsuya

    2014-06-01

    The impedance behaviors of Si-O-C composite film electrodeposited on Cu microcones-arrayed current collector have been investigated to understand the electrochemical process kinetics that influences the cycling performance when used as a highly-durable anode in a lithium battery. The impedance was measured by using impedance spectroscopy in equilibrium conditions at various depths of discharge and during several hundred charge-discharge cycles. The measured impedance was interpreted with an equivalent circuit composed of solid electrolyte interphase (SEI) film, charge transfer and solid state diffusion. The impedance analysis shows that the change of charge transfer resistance is the main contribution to the total resistance change during discharge, but an abrupt augmentation of diffusive resistance at high depth of discharge is also observed which cannot be explained very well by the presented model. The impedance evolution of this electrode during charge-discharge cycles suggests that the slow growth of the SEI film as well as the increase of the electrode density are responsible for the capacity fading after long term cycling.

  11. Crystallite size measurement and micro-strain analysis of electrodeposited copper thin film using Williamson-Hall method

    Science.gov (United States)

    Augustin, Arun; Udupa, K. Rajendra; Udaya Bhat, K.

    2016-05-01

    The improvement in hydrophilicity of copper coating on aluminium for better antimicrobial activity can be achieved by increase in surface energy. The surface energy depends on the micro-strain of the coating. Micro-strain in the coatingincreases with reduction in crystallite size. In this investigation, the crystallite size in the electrodeposited copper coating was varied by varying deposition current density. Crystallite size and micro-strain in the coating were estimated using Williamson-Hall method. Values of crystallite sizes using TEM micrographs were in agreement with that using Williamson-Hall method. Also, presence of nano-twins in the coating contributed for micro-strain in copper coating.

  12. Electrodeposition of Biocomposite Film Onto ZnO Nanoparticles Modified Electrode for Closed-Loop Insulin Delivery.

    Science.gov (United States)

    Chi, Yang; Dan, Zhang; Wu, Jingjing; Pan, Wanyu; Cai, Rui

    2016-03-01

    In this study, glucose responsive bioinorganic composite (BIM) was prepared through chitosan microparticles coupling concanavalin A, enzymes and dextran-insulin via specific affinity. The drug-delivery device was fabricated by electrodeposition of BIM onto the nanostructured ZnO on indium tin oxide (ITO) substrate. The release profiles of device revealed that the insulin release was in response to the glucose concentration in vitro experiment. The released insulin still remained the activity after running the whole process and the device showed the capability for glucose sensing continuously. All these results suggest that the device may be a promising system for self-regulated insulin delivery and glucose monitoring. PMID:27455634

  13. Auger relative sensitivivity factors for CdTe oxide

    OpenAIRE

    Bartolo-Pérez, P.; Peña, J. L.; M.H. Farías

    1999-01-01

    The Auger lineshape of Te MNN in measurements of Auger spectra of CdTe oxide films with various degrees of oxidation was analyzed. By using standards from stoichiometric compounds, Auger relative sensitivity factors (RSF´s) of Cd, Te and O for CdTe oxide thin films were obtained. The value of the RFS of oxygen is about constant, 0.27-0.28, for the standard compound, CdO, TeO2 and CdTeO3 (considering the RSF of Cd as 1). However, the obtained RSF of Te changes from 0.69 in CdTe up to 0.87 in C...

  14. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  15. Effect of Substrate Temperature on CdTe Thin Film Property and Solar Cell Performance%衬底温度对碲化镉薄膜性质及太阳电池性能的影响

    Institute of Scientific and Technical Information of China (English)

    曹胜; 武莉莉; 冯良桓; 王文武; 张静全; 郁骁骑; 李鑫鑫; 李卫; 黎兵

    2016-01-01

    蒸汽输运法是制备高质量且大面积均匀的 CdTe 薄膜的一种优良的方法。采用自主研发的一套蒸汽输运沉积系统制备了 CdTe 多晶薄膜,并研究了衬底温度对 CdTe 薄膜性质及太阳电池性能的影响。利用 XRD、SEM、UV-Vis和Hall等测试手段研究了衬底温度对薄膜的结构、光学性质和电学性质的影响。结果表明,蒸汽输运法制备的CdTe薄膜具有立方相结构,且沿(111)方向高度择优。随着衬底温度的升高(520℃~640℃), CdTe薄膜的平均晶粒尺寸从2mm增大到约6mm, CdTe薄膜的载流子浓度也从1.93×1010 cm–3提高到2.36×1013 cm–3,说明提高衬底温度能够降低CdTe薄膜的缺陷复合,使薄膜的p型更强。实验进一步研究了衬底温度对CdTe薄膜太阳电池性能的影响,结果表明适当提高衬底温度,能够大幅度提高电池的效率、开路电压和填充因子,但是过高的衬底温度又会降低电池的长波光谱响应,导致电池转换效率的下降。经过参数优化,在衬底温度为610℃、无背接触层小面积CdTe薄膜太阳电池的转换效率达到11.2%。%Vapor transport deposition is an excellent method for preparing large area CdTe thin films with high quality and uniformity. Polycrystalline CdTe thin films were deposited by home-made vapor transport deposition system (VTD). The effects of substrate temperature on the property of CdTe film and the performance of CdTe solar cell were inves-tigated. CdTe thin films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), UV-Vis spectrometer, and Hall Effect system. The results show that the CdTe thin films deposited by vapor transport deposi-tion are cubic phase with a preferred orientation in (111) direction. The average grain size increases from 2mm to 6mm and the carrier concentration increases from 1.93×1010 cm–3 to 2.36×1013 cm–3 when the substrate temperature increases from 520 ℃ to 620 ℃. This

  16. Nanowire and core-shell-structures on flexible Mo Foil for CdTe solar cell applications

    OpenAIRE

    Williams, Ben; Durose, Ken; Kartopu, Giray; Barrioz, Vincent; Lamb, Daniel; Irvine, Stuart; Zoppi, Guillaume; Forbes, Ian

    2011-01-01

    CdTe films, nanowires, film-nanowire combinations and CdS-CdTe core-shell structures have been fabricated in a preliminary survey of growth methods that will generate structures for PV applications. Selectivity between film, nanowire and film plus nanowire growth was achieved by varying the pressure of N2 gas present during Au-catalysed VLS growth of CdTe, on either Mo or Si substrates. Metamorphic growth of CdTe nanowires on sputtered CdTe films, deposited on glass substrates, was demonstrat...

  17. Electrodeposited ZnIn{sub 2}S{sub 4} onto TiO{sub 2} thin films for semiconductor-sensitized photocatalytic and photoelectrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Assaker, Ibtissem Ben, E-mail: ibtissem.ben-assaker@laposte.net [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia); Gannouni, Mounir; Naceur, Jamila Ben [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia); Almessiere, Munirah Abdullah; Al-Otaibi, Amal Lafy; Ghrib, Taher [Laboratory of Physical Alloys (LPA), College of Science, University of Dammam (Saudi Arabia); Shen, Shouwen [Advanced Analysis Unit, Technical Service Division Research & Development Center Saudi Aramco, Dhahran (Saudi Arabia); Chtourou, Radhouane [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia)

    2015-10-01

    Graphical abstract: - Highlights: • ZnIn{sub 2}S{sub 4} thin films was grown using electrodeposition route onto TiO{sub 2}/ITO coated glass substrate. • Study of the heterostructure ZnIn{sub 2}S{sub 4}/TiO{sub 2} thin films. • Photocatalytic activity of ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure under visible light irradiation. • High performance of Photoelectrochemical properties in the presence of the junction ZnIn{sub 2}S{sub 4}/TiO{sub 2}. - Abstract: In this study, ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure was successfully synthesized on ITO-coated glass substrates via a facile two-step process from aqueous solution. First, TiO{sub 2} thin film was prepared by sol–gel and deposited onto ITO coated glass substrate by spin-coating method. Then the zinc indium sulfide semiconductor was fabricated via electrodeposition technique onto TiO{sub 2}/ITO coated glass electrode. The X-ray diffraction patterns confirm that the heterostructure is mixed of both Anatase TiO{sub 2} and Rhombohedric ZnIn{sub 2}S{sub 4}. The scanning electron microscopy (SEM) images show that the morphology change with the deposition of ZnIn{sub 2}S{sub 4} over TiO{sub 2} thin film and a total coverage of the electrode surface was obtained. Optical absorption spectroscopy study of ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure exhibits a remarkable red-shift compared to the TiO{sub 2} and ZnIn{sub 2}S{sub 4} achieve the best efficiency of visible light absorption. Therefore, it is expected to apply to visible-light photocatalysis and solar cells. To investigate the effect of the heterojunction on the photocatalytic activity of ZnIn{sub 2}S{sub 4}/TiO{sub 2} thin films, photodegradation of methylene blue in the presence of ZnIn{sub 2}S{sub 4} was performed. ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure exhibited strong photocatalytic activity, and the degradation of methylene blue eached 91% after irradiation only for 4 h. Also, the study of the photocurrent density produced

  18. Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

    Science.gov (United States)

    Bhattacharya, Raghu Nath

    2016-01-12

    A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

  19. Development of Electrodeposited CIGS Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-09-357

    Energy Technology Data Exchange (ETDEWEB)

    Neale, Nathan [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-09-01

    At present, most PV materials are fabricated by vacuum technologies. Some of the many disadvantages of vacuum technology are complicated instrumentation, material waste, high cost of deposition per surface area, and instability of some compounds at the deposition temperature. Solution-based approaches for thin-film deposition on large areas are particularly desirable because of the low capital cost of the deposition equipment, relative simplicity of the processes, ease of doping, uniform deposition on a variety of substrates (including interior and exterior of tubes and various nonplanar devices), and potential compatibility with high-throughput (e.g., roll-to-roll) processing. Of the nonsilicon solar photovoltaic device modules that have been deployed to date, those based on the n-CdS/p-CdTe is a leading candidate. Two features in the optical characteristics of CdTe absorber are particularly attractive for photovoltaic conversion of sunlight; (a) its energy bandgap of 1.5 eV, which provides an optimal match with the solar spectrum and thus facilitates its efficient utilization and (b) the direct mode of the main optical transition which results in a large absorption coefficient and turn permits the use of thin layer (1-2 um) of active material. Thin films of CdTe required for these devices have been fabricated by a variety of methods (e.g., vapor transport deposition, vacuum deposition, screen printing and close-spaced sublimation). Electrodeposition is another candidate deserves more attention. This project will focus on delivering low-cost, high efficiency electrodeposited CdTe-based device.

  20. Potentiostatic controlled nucleation and growth modes of electrodeposited cobalt thin films on n-Si(1 1 1)

    Science.gov (United States)

    Mechehoud, Fayçal; Khelil, Abdelbacet; Eddine Hakiki, Nour; Bubendorff, Jean-Luc

    2016-08-01

    The nucleation and growth of Co electrodeposits on n-Si(1 1 1) substrate have been investigated as a function of the applied potential in a large potential range using electrochemical techniques (voltammetry and chrono-amperometry) and surface imaging by atomic force microscopy (AFM). The surface preparation of the sample is crucial and we achieve a controlled n-Si(1 1 1) surface with mono-atomic steps and flat terraces. Using Scharifker-Hills models for fitting the current-time transients, we show that a transition from an instantaneous nucleation process to a progressive one occurs when the overpotential increases. A good agreement between the nucleation and growth parameters extracted from the models and the AFM data's is observed. The growth is of the Volmer-Weber type with a roughness and a spatial extension in the substrate plane of the deposited islands that increase with thickness.

  1. Characterization of Bi-Catalyzed Nanocrystalline CdTe Thin Films Prepared by Close Spaced Sublimation%近距离升华法制备Bi催化纳米晶CdTe薄膜的表征

    Institute of Scientific and Technical Information of China (English)

    李锦; 尚飞; 郑毓峰; 孙言飞; 简基康; 吴荣

    2009-01-01

    采用近距离升华法(Close-Spaced-Sublimation,CSS)引入Bi催化剂成功制备出了具有纳米线、近阵列排布的纳米棒等形貌的纳米晶CdTe薄膜.并利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外可见分光光度计等研究了薄膜的结构、表面形貌和光学性能.讨论了CdTe纳米结构可能的生长机制.%Bi-catalyzed nanocrystalline CdTe films were prepared by close spaced sublimation (CSS) technique successfully.These nanocrystalline CdTe films had surface appearance of nanowires or a similar array arrangement nanorod.The structure,the surface topograph and the optical properties of these films were studied using X-ray diffraction(XRD),scanning electron microscopy(SEM) and ultroviolet-visible (UV-VIS) spectrophotometer.And the possible growth mechanisms of these nanostructures were discussed.

  2. Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates

    Indian Academy of Sciences (India)

    Y G Gudage; N G Deshpande; A A Sagade; R P Sharma; S M Pawar; C H Bhosale

    2007-08-01

    Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tin–oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction (XRD), optical absorption and photoelectrochemical (PEC) techniques. XRD study revealed that the films were polycrystalline in nature with hexagonal phase. Optical absorption study showed that CdSe films were of direct band gap type semiconductor with a band gap energy of 1.8 eV. PEC study revealed that CdSe film deposited on FTO coated glass exhibited maximum values of fill factor (FF) and efficiency () as compared to the films deposited on stainless steel and titanium substrate.

  3. Temperature dependent electroreflectance study of CdTe solar cells

    International Nuclear Information System (INIS)

    Cadmium telluride is a promising material for large scale photovoltaic applications. In this paper we study CdS/CdTe heterojunction solar cells with electroreflectance spectroscopy. Both CdS and CdTe layers in solar cells were grown sequentially without intermediate processing by the close-space sublimation method. Electroreflectance measurements were performed in the temperature range of T = 100–300 K. Two solar cells were investigated with conversion efficiencies of 4.1% and 9.6%. The main focus in this work was to study the temperature dependent behavior of the broadening parameter and the bandgap energy of CdTe thin film in solar cells. Room temperature bandgap values of CdTe were Eg = 1.499 eV and Eg = 1.481 eV for higher and lower efficiency solar cells, respectively. Measured bandgap energies are lower than for single crystal CdTe. The formation of CdTe1−xSx solid solution layer on the surface of CdTe is proposed as a possible cause of lower bandgap energies. - Highlights: ► Temperature dependent electroreflectance measurements of CdS/CdTe solar cells ► Investigation of junction properties between CdS and CdTe ► Formation of CdTe1− xSx solid solution layer in the junction area

  4. 电沉积制备铜铟硫薄膜的研究%Preparation of Copper Indium Sulfide Film by Electro-Deposition Method

    Institute of Scientific and Technical Information of China (English)

    李丽波; 李琦; 王珩; 杨秀春; 田海燕; 谢菁琛; 王文涛

    2015-01-01

    Copper indium sulfide (CuinS2,CIS2) film was prepared by an electro-deposition method.Uv-vis spectrophotometer test result shows that the band gap of the electroplated CIS2 film is 1.5 eV.X-ray photoelectron spectroscopy (XPS) analysis reveals that the Cu,In and S signals corresponded to valence state (+1,+3 and-2) of three elements in CIS2 film,respectively.The photoelectrical properties of the CIS2 film were characterized by linear sweep voltammetry measurements under the dark and illumination.The I-V characteristic is linear under the dark and illumination,and the slope gap is 0.6× 10-3.We also simulated the band gap (1.5 eV) of the C[S2 film with chalcopyrite structure prepared by electroplating experiment using DMol3 and CASTEP modules,respectively.The molecular structure model of electroplated copper indium sulfide film has been established,and the X-ray diffraction simulative spectrum has been obtained by Materials Studio,which has good agreement with the experiment result.%采用电沉积的方法制备铜铟硫(CuInS2,CIS2)薄膜,紫外可见光谱仪测试结果表明电沉积制备的CIS2薄膜的禁带宽度为1.5 eV.X射线光电子能谱(XPS)分析表明,薄膜中的铜、铟、硫元素的价态分别为+1,+3和-2.采用线性伏安扫描测试了薄膜的光电性质,在黑暗和光照的条件下,I-V曲线斜率变化率为0.6×10-3.运用DMol3和CASTEP模块计算了电沉积制备的铜铟硫薄膜的禁带宽度,其数值为1.5 eV.通过Materials Studio建立了电沉积制备出的铜铟硫薄膜的结构和XRD模拟谱图,与实验结果一致.

  5. Influence of ethanol content in the precursor solution on anodic electrodeposited CeO2 thin films

    International Nuclear Information System (INIS)

    Ceria thin films have been anodically deposited onto 316L stainless steel in bath solutions containing different volume ratios of ethanol (0, 10, 40, 70 and 100% v/v). The influence of ethanol content on the electroplating behavior, and the structural and corrosion properties of the cerium oxide films were studied with electrochemical impedance spectroscopy, scanning electron microscopy, ellipsometry, X-ray diffraction, and Raman and X-ray photoelectron spectroscopy. Results show that ethanol content plays a significant role on the properties of the deposited ceria films but negligible effect on their electroplating behavior. The as-deposited films are mostly in the Ce(IV) oxidation state and the stoichiometry is around CeO1.90 for all samples. With the increase of ethanol content from 0 to 100% v/v, the average grain diameter and film thickness of the obtained ceria film decrease from 16.8 nm to 11.1 nm and from 32.9 nm to 15.8 nm, respectively. Using a deposition bath solution containing 10% v/v ethanol, a layer of compacted yellowish gold ceria film with the minimum porosity of 19.9%, mean crystalline diameter of 15.4 nm, and maximum corrosion resistance of 3.31 × 10−5 Ω has been obtained. - Highlights: • Ethanol plays a negligible effect on ceria film anodic electroplating behavior. • Average grain diameter and thickness of the film decrease with the ethanol addition. • Appropriate amount of ethanol can markedly improve the film quality. • Film color changes gradually with increasing ethanol addition into deposition bath. • Nanocrystalline CeO1.90 films of golden yellowish have been obtained

  6. Electro-Deposition Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The electro-deposition laboratory can electro-deposit various coatings onto small test samples and bench level prototypes. This facility provides the foundation for...

  7. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-04-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1-x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  8. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  9. Photoluminescence and Electroluminescence Properties of CdTe Nanoparticles in Conjugated Polymer Hosts

    Institute of Scientific and Technical Information of China (English)

    GUO, Fengqi; XIE, Puhui

    2009-01-01

    The photoinduced energy transfer process from conjugated polymer (PPE4+) to CdTe nanocrystals was found both in solutions and in thin films by a fluorescence spectroscopic technique. Films of PPE4+ blended with CdTe-2 nanocrystals were formed by an electrostatic layer-by-layer assembly technique. Light emitting diodes were fabricated using CdTe-2 as an emitter in PPE4+ host. PPE4+ works as a molecular wire in the energy transfer process from the polymer to the CdTe-2 nanocrystals.

  10. Surface-mediated structural transformation in CdTe nanoparticles dispersed in SiO2 thin films

    Science.gov (United States)

    Dayal, P. Babu; Mehta, B. R.; Aparna, Y.; Shivaprasad, S. M.

    2002-11-01

    Cadmium telluride nanoparticles dispersed in silicon dioxide thin films have been grown by magnetron sputtering technique followed by thermal annealing. The effect of thermal annealing conditions on the structure of the surface layer and the nanoparticle core has been studied. A structural transformation in the nanoparticle core mediated solely by surface effects has been observed for the first time in any nanoparticle system. The presence of a crystalline cadmium tellurium oxide layer modifies the crystal structure of the cadmium telluride nanoparticle core by introducing a large concentration of stacking faults.

  11. Radiative and interfacial recombination in CdTe heterostructures

    International Nuclear Information System (INIS)

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm−2 and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10−10 cm3s−1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate

  12. Studies of key technologies for CdTe solar modules

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO2:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm2) was achieved.

  13. Studies of single-step electrodeposition of CuInSe 2 thin films with sodium citrate as a complexing agent

    Science.gov (United States)

    Whang, Thou-Jen; Hsieh, Mu-Tao; Kao, Ya-Chun

    2010-12-01

    The influences of various parameters in a single-step electrodeposition of CuInSe 2 from aqueous solution containing CuCl 2, InCl 3, and SeO 2, with sodium citrate as the complexing agent, are investigated. Co-deposition of CuInSe 2 from a room temperature, aqueous bath of these electrolytes is accomplished by the aid of sodium citrate. In this work the optimum potential for deposition of CuInSe 2 is found to be -0.5 V vs. Ag/AgCl, the deposition time is 800 s, the concentration ratio of CuCl 2, InCl 3, and SeO 2 is 9 mM:22 mM:22 mM in aqueous solution, and the annealing temperature is 225 °C. Under the optimum conditions, crystalline layers of CuInSe 2 having the chalcopyrite structure can be successfully synthesized. Cyclic voltammetry (CV), scanning electron microscope (SEM), X-ray diffractometer (XRD), and energy dispersive X-ray spectrometer (EDX) were used to examine the electrochemistry, morphologies, structures, and compositions of CuInSe 2 thin films deposited on ITO glass.

  14. Studies of single-step electrodeposition of CuInSe{sub 2} thin films with sodium citrate as a complexing agent

    Energy Technology Data Exchange (ETDEWEB)

    Whang, Thou-Jen, E-mail: twhang@mail.ncku.edu.tw [Department of Chemistry, National Cheng Kung University, No. 1, University Road, Tainan 70101, Taiwan (China); Hsieh, Mu-Tao; Kao, Ya-Chun [Department of Chemistry, National Cheng Kung University, No. 1, University Road, Tainan 70101, Taiwan (China)

    2010-12-15

    The influences of various parameters in a single-step electrodeposition of CuInSe{sub 2} from aqueous solution containing CuCl{sub 2}, InCl{sub 3}, and SeO{sub 2}, with sodium citrate as the complexing agent, are investigated. Co-deposition of CuInSe{sub 2} from a room temperature, aqueous bath of these electrolytes is accomplished by the aid of sodium citrate. In this work the optimum potential for deposition of CuInSe{sub 2} is found to be -0.5 V vs. Ag/AgCl, the deposition time is 800 s, the concentration ratio of CuCl{sub 2}, InCl{sub 3}, and SeO{sub 2} is 9 mM:22 mM:22 mM in aqueous solution, and the annealing temperature is 225 deg. C. Under the optimum conditions, crystalline layers of CuInSe{sub 2} having the chalcopyrite structure can be successfully synthesized. Cyclic voltammetry (CV), scanning electron microscope (SEM), X-ray diffractometer (XRD), and energy dispersive X-ray spectrometer (EDX) were used to examine the electrochemistry, morphologies, structures, and compositions of CuInSe{sub 2} thin films deposited on ITO glass.

  15. Electrodeposition of perpendicular Gd x (FeCo) y magnetic thin film from ZnCl2-DMSO2 electrolyte

    International Nuclear Information System (INIS)

    In this work, we have utilized ZnCl2-dimethylsulfone (DMSO2) as the electrolyte for preparing a perpendicular Gd x (FeCo) y magnetic thin film by the pulse potential with a voltage of -0.001 V and pulse ratio (t on/t off) of 0.1 and 0.2. A perpendicularly magnetic property of the thin film was investigated by alternating gradient magnetometer (AGM). Moreover, a crystal structure and cross-section of the thin film were observed by transmission electron microscope (TEM)

  16. Vapor phase epitaxy of CdTe on sapphire and GaAs

    Science.gov (United States)

    Kasuga, Masanobu; Futami, Hiroyuki; Iba, Yoshihiro

    1991-12-01

    CdTe films were deposited on three kinds of sapphire substrate and two kinds of GaAs substrate by open tube vapor transport. X-ray Laue diffraction study showed that CdTe(111) film grew on every kind of sapphire substrate used, i.e. on the (0001) basal plane, the (11 overline20)A plane and the (1 overline102)R plane, and that there exist a few degrees of tilt angel between CdTe(111) and the lattice plane of each substrate. The process of making the tilt angle may be explained by the atomistic mismatch model of the Cd and Al arrangement which is projected on the film-substrate interface. On GaAs(100), either CdTe(111) or CdTe(100) was obtained, whereas only a twin crystalline film was obtained on GaAs(111). These results are also consistent with the mismatch model of Cd and Ga atoms.

  17. Green and controllable strategy to fabricate well-dispersed graphene–gold nanocomposite film as sensing materials for the detection of hydroquinone and resorcinol with electrodeposition

    International Nuclear Information System (INIS)

    Highlights: ► We reported firstly green and controllable strategy to fabricate graphene–gold composite. ► The strategy provides control over reaction parameters and excellent repeatability. ► The composite offers faster electron transfer than pure graphene and gold nanoparticles. ► The composite was used to fabricate sensor for detection of hydroquinone and resorcinol. ► The sensor displays the best sensitivity for hydroquinone and resorcinol up to now. - Abstract: The paper described a green and controllable strategy to fabricate well-dispersed graphene–gold nanocomposite film. To prepare graphene–gold nanocomposite film, graphene and gold nanoparticles were alternately electrodeposited on the surface of glassy carbon electrode. Since electrochemical technique offers control over reaction parameters and excellent repeatability, the amounts of graphene and gold nanoparticles for the each layer can be pre-determined by controlling concentrations of graphene oxide and chlorauric acid. The as-prepared graphene–gold nanocomposite film was characterized by infrared spectrum, scanning electron microscope, Raman spectrum and X-ray diffraction, and its electrocatalytic activity was estimated by Laviron's model. The apparent heterogeneous electron transfer rate constant of 37.67 ± 0.19 cm s−1 was obtained, indicating fast electron transfer of Fe(CN)64− to the electrode. Further, the film was investiaged as sensing materials for synchronously detection of hydroquinone and resorcinol. When the cencentrations are in the ranges of 1.6 × 10−8 to 1.2 × 10−4 mol l−1 for hydroquinone and 1.0 × 10−8 to 2 × 10−6 mol l−1 for resorcinol, differential pulse voltammetric peak current of the sensor linearly increases. The sensitivities of differential pulse voltammetric response are 30.5 μA μM−1 cm−2 for hydroquinone and 117.83 μA μM−1 cm−2 for resorcinol. The detection limits were found to be 5.2 × 10−9 mol l−1 for hydroquinone and

  18. Elucidating PID Degradation Mechanisms and In-Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    DEFF Research Database (Denmark)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve;

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  19. Electrodeposition of nanoengineered thermoelectric materials

    Science.gov (United States)

    Xiao, Feng

    Thermoelectric (TE) energy converters are solid-state devices that can generate electricity by harvesting waste thermal energy, thereby improving the efficiency of a system. The many advantages of TE devices include solid-state operation, zero-emissions, vast scalability, no maintenance and a long operating lifetime. The efficiency of TE materials is directly related to a dimensionless figure of merit ZT. In order to compete with conventional refrigerators and power generators, ZT of 3 is required. Due to their limited energy conversion efficiencies (i.e. ZT thermoelectric devices currently have a rather limited set of applications. Classical and quantum mechanical size effects provide additional ways to enhance energy conversion efficiencies in nanostructured materials. Theoretical calculations predict that ZT of 5 can be achieved in one-dimensional nanostructures including nanowires and nanotubes. The goal of my work was to develop electrodeposition techniques to synthesis various thermoelectric nanostructures including 2-D superlatticed thin films, 1-D nanowires and nanotubes and quasi 0-D superlatticed nanowires and investigate their properties. Electrodeposition is selected because of the ability to "tailor-made" their morphology and properties. Specifically, the accomplishments of this thesis include the following: (1) Electrodeposition of PbTe thin films was systematically investigated in an acidic nitric bath. (2) Single crystalline PbTe cubes were electrodeposited on polycrystalline gold substrates. (3) Single crystalline PbTe nanowires were synthesized using a template-directed electrodeposition process. The temperature dependent electro-transport studies reveal that the conduction mechanism in the temperature range 150-220 K is different from that in the temperature range 220-300 K. (4) Bi1.8 Sb0.1Te3.1 and (Bi0.3Sb0.7) 2Te3 nanowires were electrodeposited from acidic tartaric-nitric baths and their temperature dependent electrical properties were

  20. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., West Lafayette, IN (United States)

    1994-03-01

    Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

  1. Evolution of Principle and Practice of Electrodeposited Thin Film: A Review on Effect of Temperature and Sonication

    Directory of Open Access Journals (Sweden)

    A. Mallik

    2011-01-01

    Full Text Available This review discusses briefly the important aspects of thin films. The introduction of the article is a summary of evolution of thin films from surface engineering, their deposition methods, and important issues. The fundamental aspects of electrochemical deposition with special emphasis on the effect of temperature on the phase formation have been reviewed briefly. The field of sonoelectrochemistry has been discussed in the paper. The literature regarding the effects of temperature and sonication on the structure and morphology of the deposits and nucleation mechanisms, residual stress, and mechanical properties has also been covered briefly.

  2. Study of electrodepositing Au on hollow polystyrene microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Jin Rong [Research Center of Laser Fusion, China Academy of Engineering Physics, P.O. Box 919-987, Mianyang 621900 (China); School of Material Science and Engineering, Xihua University, Chengdu 610039 (China); Zhang Yunwang [Research Center of Laser Fusion, China Academy of Engineering Physics, P.O. Box 919-987, Mianyang 621900 (China); Zhang Lin, E-mail: zhlmy@sina.com [Research Center of Laser Fusion, China Academy of Engineering Physics, P.O. Box 919-987, Mianyang 621900 (China); Wei Chengfu, E-mail: wcf@mail.xhu.edu.cn [School of Material Science and Engineering, Xihua University, Chengdu 610039 (China); Guo Jianjun [School of Material Science and Engineering, Xihua University, Chengdu 610039 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer The gold is electrodeposited on hollow polystyrene microspheres by self-designed setup in this paper. Black-Right-Pointing-Pointer The Au electrodeposit is finer and more uniform on account of the microspheres freely move on the cathode. Black-Right-Pointing-Pointer The morphology, thickness and roughness of Au electrodeposits were analyzed using Scanning Electron Microscopy, X-ray diffraction and Atomic Force Microscope, respectively. - Abstract: The electrodeposited Au film on hollow polystyrene microspheres is successfully prepared by a set of self-designed device. The film is more compact and uniform on account of the microspheres freely moving on the cathode. These experiments mainly focus on the analysis of spherical symmetry, thickness and roughness of electrodeposited Au film. Under conditions of current density 1.5-3 mA cm{sup -2}, the temperature 25 Degree-Sign C, and the stirring rate 150 rpm, the electrodeposited microsphere is coated with a considerably orbicular film. The morphology, thickness and roughness of Au electrodeposits are studied by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Atomic Force Microscope (AFM), respectively.

  3. CdTe钝化介质膜的溅射沉积及其X射线光电子能谱研究%The Sputtering Deposition and the X-ray Photoelectron Spectroscopy Study for the CdTe Thin Film

    Institute of Scientific and Technical Information of China (English)

    周咏东; 李言谨; 吴小山; 徐国森; 方家熊; 汤定元

    2001-01-01

    用Ar+束溅射沉积技术实现了CdTe薄膜的低温沉积生长。用X射线光电子能谱(XPS)分析技术对溅射沉积CdTe薄膜以及CdTe体晶中的Cd元素、Te元素化学环境进行了对比实验研究。实验表明:溅射沉积CdTe薄膜具有很好的组份均匀性,未探测到有元素(Cd、Te)沉积存在。%The CdTe film was grown by using the low-temperature ion beam sputtering technique. The Cd and Te elements in the sputtering CdTe film sample were studied and compared with those in the CdTe bulk using X-ray photoelectron spectroscopy (XPS) technique. It is proved that the constituent elements in the sputtering CdTe film are homogeneous. No element deposition (Cd, Te) is detceted.

  4. The mechanism of cathodic electrodeposition of epoxy coatings and the corrosion behaviour of the electrodeposited

    Directory of Open Access Journals (Sweden)

    VESNA B. MISKOVIC-STANKOVIC

    2002-05-01

    Full Text Available The model of organic film growth on a cathode during electrodeposition process proposes the current density-time and film thickness-time relationships and enables the evaluation of the rate contants for the electrochemical reaction of OH– ion evolution and for the chemical reaction of organic film deposition. The dependences of film thickness and rate constants on the applied voltage, bath temperature and resin concentration in the electrodeposition bath have also been obtained. The deposition parameters have a great effect on the cathodic electrodeposition process and on the protective properties of the obtained electrodeposited coatings. From the time dependences of the pore resistance, coating capacitance and relative permittivity, obtained from impedance measurements, the effect of applied voltage, bath temperature and resin concentration on the protective properties of electrodeposited coatings has been shown. Using electrochemical impedance spectroscopy, thermogravimetric analysis, gravimetric liquid sorption experiments, differential scanning calorimetry and optical miscroscopy, the corrosion stability of epoxy coatings was investigated. A mechanism for the penetration of electrolyte through an organic coating has been suggested and the shape and dimensions of the conducting macropores have been determined. It was shown that conduction through a coating depends only on the conduction through the macropores, although the quantity of electrolyte in the micropores of the polymer net is about one order of magnitude greater than that inside the conducting macropores.

  5. 具有复合背接触层的 CdTe多晶薄膜太阳电池%Polycrystalline CdTe thin- film solar cells with complex back contact layers

    Institute of Scientific and Technical Information of China (English)

    覃文治; 夏庚培; 郑家贵; 李卫; 蔡伟; 冯良桓; 蔡亚平; 黎兵; 张静全; 武莉莉

    2005-01-01

    To improve the properties of back contacts of CdTe solar cells, ZnTe:Cu and polycrystalline Cd1- xZnxTe films were deposited by simultaneous evaporation. Investigative data of the configuration and performance indicate that energy gap of Cd1- xZnxTe films assume quadratic connection with zinc content. With increasing of Cu content, energy gap of polycrystalline ZnTe:Cu will decrease. ZnTe/ZnTe:Cu or Cd1- xZnxTe/ZnTe:Cu back contacted cells can reduce the heterogeneous interface state density and modify the structure of energy band of the solar cells. Furthermore, diffusion of Cu can avoid by this compound films in CdTe solar cells. An efficiency of 13.38% of solar cell with dimension of 0.502cm2was fabricated.%为了提高 CdTe太阳电池的背接触性能,用共蒸发法制备了 ZnTe:Cu和 Cd1- xZnxTe多晶薄膜. 研究结果表明: Cd1- xZnxTe多晶薄膜的能隙与锌含量呈二次方关系, ZnTe:Cu多晶薄膜能隙随着掺 Cu浓度的增加而减小.分别用 ZnTe/ZnTe:Cu和 Cd1- xZnxTe/ZnTe:Cu复合膜作为背接触层,既能 修饰异质结界面,改善电池的能带结构,又能防止 Cu原子向电池内部扩散.因此获得了面积 0.502cm2,转换效率为 13.38%的 CdTe多晶薄膜太阳电池.

  6. Electrodeposition and characterization of nano-structured black nickel thin films%纳米结构黑镍薄膜的电沉积制备及其电化学行为

    Institute of Scientific and Technical Information of China (English)

    李建梅; 蔡超; 宋利晓; 李劲风; 张昭; 薛敏钊; 刘燕刚

    2013-01-01

    The electrodeposition and characterization of nano-structured black nickel coatings were presented. The influences of bath pH, electrodeposition time, stirring speed, temperature and current density on the color and microstructure of the electrodeposited nickel film were investigated through naked eyes, scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. Meanwhile, the corrosion resistance of the optimized black nickel film was evaluated by the polarization measurement and electrochemical impedance spectroscopy (EIS) in the neutral 3.5% NaCl solution. The results show that the color of the electrodeposited nickel film was highly dependent on the above technological parameters. The operating parameters were optimized mainly according to the color. The optimized black nickel film possesses nano-structure with an average grain diameter of about 50 nm. It also exhibits enhanced corrosion resistance when compared with white nickel coatings electrdodeposited under the same condition except the variation of the electroplating current density.%采用电沉积方法制备具有整体纳米结构的黑镍镀层,并通过肉眼观察结合扫描电镜、X射线衍射等测试技术研究电沉积过程中的主要参数(电解液pH、搅拌速度、制备温度及电流密度)对镀层颜色及整体微观结构的影响。进一步采用动电位极化及电化学阻抗等电化学测量技术研究黑镍镀层在中性3.5%NaCl溶液中的腐蚀行为及腐蚀机理。结果表明:黑镍镀层的颜色变化趋势决定于电沉积制备参数的选择;通过优化本工艺制备的黑镍镀层平均粒径约为50 nm。对比了近似条件下制备的光亮镍镀层,发现黑镍镀层在耐蚀性方面具有较大优势。

  7. Interfacial investigation and strengthening behaviour of Zn-Ni multifacial TEA/MEA thin films induced by electrodeposition

    Science.gov (United States)

    Fayomi, O. S. I.; Tau, V.; Popoola, A. P. I.; Abdulwahab, M.; Madhilabar, R.

    2015-11-01

    Zinc-nickel films were obtained by electrocodeposition using electrolytic deposition techniques in the presence of TEOA (C6H15NO3) and a surfactants consisting of triethylamine and monoethylamine with other bath additives. The modified structure of the films was analysed with scanning electron microscopy attached to energy-dispersive spectrometer, atomic force microscope and X-ray diffraction. Micro-hardness and corrosion of the coated body was examined and used as a criterion to justify the adhesion of the crystal deposited. The corrosion resistance of the coated and uncoated composites was studied in 3.5 % sodium chloride static solution using linear polarization technique. The hardness value increased from 38HV—substrate to 180HV—coated body, indicating a 78.89 % improvement. Equally, the corrosion resistance of the deposited matrix was enhanced by 84.62 %.

  8. Defect structure of electrodeposited chromium layers

    CERN Document Server

    Marek, T; Vertes, A; El-Sharif, M; McDougall, J; Chisolm, C U

    2000-01-01

    Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

  9. CdTe Solar Cells: The Role of Copper

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Da [Arizona State University; Akis, Richard [Arizona State University; Brinkman, Daniel [Arizona State University; Sankin, Igor [First Solar; Fang, Tian [First Solar; Vasileska, Dragica [Arizona State University; Ringhofer, Christain [Arizona State University

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  10. INTEGRATIION STYDY OF CdTe THIN FILMS PV MODULE%CdTe组件集成结构模拟优化及前、背电极接触电阻测定

    Institute of Scientific and Technical Information of China (English)

    汪灵; 曾广根; 蔡伟; 冯良桓; 张静全; 蔡亚平; 武莉莉; 李卫; 黎兵; 雷智; 郑家贵

    2011-01-01

    设计特定的测试结构,测量CdTe太阳电池组件的相邻单元电池的前电极与背电极的接触电阻,研究接触电阻与激光刻蚀刻痕的关系;使用module design simulator软件模拟分析相关膜层电子学性质、集成结构、单元电池性能对电池组件性能的影响.对CdTe电池组件接触电阻测量结果表明:随Ni层厚度增加,接触电阻减小,镍电极镀层较厚(410nm)时,接触电阻在10-3Ω·cm2数量级;加宽刻痕宽度使接触电阻略有下降;基频刻蚀CdTe层所得刻痕的接触电阻比倍频刻蚀高1~2个数量级.module design simulator软件模拟分析结果表明:CdTe薄膜太阳电池组件性能除与单元电池性能参数(转换效率、填充因子、短路电流、开路电压)相关外,单元电池宽度、TCO层方块电阻(或透过率)、CdTe层方块电阻、集成接触区接触电阻都对电池组件的性能存在影响.%The CdTe thin films PV module had been studied by measuring the contact resistance between the back contact metal and the front TCO film of the adjacent elementary cells. The "MODULE DESIGN SIMULATOR" software had been used to simulate the effects of the film electronic performance, the integration structure, and the contact elementary cell characteristics on module characteristics. The contact resistance decreases with the increasing of the thickness of Ni film. And the contact resistance increases 1 -2 orders of magnitude when the CdTe films were etched by basic frequency laser. The highest efficiency corresponds with the optimized cell width and the width of the notches. The unit cell width, sheet resistance of TCO & CdTe, and TCO/Ni contact resistance have great effect on the property of the module, respectively. With the increasing of TCO sheet resistance, the conversion efficiency firstly increase sharply and then decrease slowly. Increasing the sheet resistance of CdTe will lead to the increasing of both conversion efficiency and fill factor.

  11. Catalytic growth of CdTe nanowires by closed space sublimation method

    International Nuclear Information System (INIS)

    CdTe nano-/micro-structures with various morphologies were grown by using the closed space sublimation (CSS) method on a sapphire substrate by Au-catalyzed vapor–liquid–solid (VLS) mechanism. Length, diameter, and morphology of the CdTe nano-/micro-structures depended on the growth time and temperature gradient between the substrate and powdered CdTe source. Scanning electron microscopy images showed that an Au catalyst droplet existed at the tips of CdTe nanowires, which confirms that CdTe nanowires were grown by an Au-catalyzed VLS mechanism. Also, we observed that the two-dimensional CdTe film layer initially formed before the growth of the CdTe nano-/micro-wires. The optical and structural properties of CdTe nano-/micro-structures were characterized by X-ray diffraction technique and micro-Raman spectroscopy. Our study demonstrates that diverse CdTe nano-/micro-structures can be fabricated by using Au-catalyzed VLS growth process in a simple CSS chamber by controlling the temperature gradient and growth time. - Highlights: • We demonstrated CdTe nanowires using closed space sublimation method. • Au-catalyst droplets at the tips confirmed vapor–liquid–solid mechanism. • Diameters and lengths increased with increasing temperature gradient and time

  12. A novel method for fabricating hybrid biobased nanocomposites film with stable fluorescence containing CdTe quantum dots and montmorillonite-chitosan nanosheets.

    Science.gov (United States)

    Guo, Yawen; Ge, Xuesong; Guan, Jing; Wu, Lin; Zhao, Fuhua; Li, Hui; Mu, Xindong; Jiang, Yijun; Chen, Aibing

    2016-07-10

    A method was presented for fabricating the fluorescent nanocomposites containing CdTe quantum dots (QDs) and montmorillonite (MMT)-chitosan (CS). MMT-CS/CdTe QDs nanocomposites were prepared via a simple, versatile and robust approach combination of covalent and electrostatic assembly methods (Scheme 1). The negatively charged MMT was initially modified with positively charged CS through electrostatic assembly, followed by incorporation of CdTe-QDs into the MMT-CS nanosheets by covalent connections between the amino groups of CS and the carboxylic acid groups of thioglycollic acid (TGA). The X-ray diffraction (XRD), High resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and the FTIR were used to prove the QDs have intercalated into the MMT-CS matrix. The fluorescence emission spectra showed that the MMT-CS/CdTe QDs nanocomposites had the best fluorescence intensity compared with the bare CdTe QDs and CS-QDs. PMID:27106146

  13. Ultrafast dynamics of the indoline dye D149 on electrodeposited ZnO and sintered ZrO2 and TiO2 thin films.

    Science.gov (United States)

    Oum, Kawon; Lohse, Peter W; Flender, Oliver; Klein, Johannes R; Scholz, Mirko; Lenzer, Thomas; Du, Juan; Oekermann, Torsten

    2012-11-28

    The ultrafast photoinjection and subsequent relaxation steps of the indoline dye D149 were investigated in detail for a mesoporous electrodeposited ZnO thin film and compared with experiments on sintered TiO(2) and ZrO(2) thin films, all in contact with air, using pump-supercontinuum probe (PSCP) transient absorption spectroscopy in the range 370-770 nm. D149 efficiently injects electrons into the ZnO surface with time constants from ≤70 fs (time-resolution-limited) up to 250 fs, without the presence of slower components. Subsequent spectral dynamics with a time constant of 20 ps and no accompanying change in the oscillator strength are assigned to a transient Stark shift of the electronic absorption spectrum of D149 molecules in the electronic ground state due to the local electric field exerted by the D149˙(+) radical cations and conduction band electrons in ZnO. This interpretation is consistent with the shape of the relaxed PSCP spectrum at long times, which resembles the first derivative of the inverted steady-state absorption spectrum of D149. In addition, steady-state difference absorption spectra of D149˙(+) in solution from spectroelectrochemistry display a bleach band with distinctly different position, because no first-order Stark effect is present in that case. Interference features in the PSCP spectra probably arise from a change of the refractive index of ZnO caused by the injected electrons. The 20 ps component in the PSCP spectra is likely a manifestation of the transition from an initially formed bound D149˙(+)-electron complex to isolated D149˙(+) and mobile electrons in the ZnO conduction band (which changes the external electric field experienced by D149) and possibly also reorientational motion of D149 molecules in response to the electric field. We identify additional spectral dynamics on a similar timescale, arising from vibrational relaxation of D149˙(+) by interactions with ZnO. TiO(2) exhibits similar dynamics to ZnO. In the case of

  14. Quantitative texture analysis of electrodeposited line patterns

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A.J.

    2005-01-01

    Free-standing line patterns of Cu and Ni were manufactured by electrochemical deposition into lithographically prepared patterns. Electrodeposition was carried out on top of a highly oriented Au-layer physically vapor deposited on glass. Quantitative texture analysis carried out by means of x......-ray diffraction for both the substrate layer and the electrodeposits yielded experimental evidence for epitaxy between Cu and Au. An orientation relation between film and substrate was discussed with respect to various concepts of epitaxy. While the conventional mode of epitaxy fails for the Cu...

  15. 电沉积-退火工艺制备铜铟硒太阳能电池薄膜及表征%Preparation and Characterization of Electrodeposited-Annealed CulnSe2 Thin Films for Solar Cells

    Institute of Scientific and Technical Information of China (English)

    张中伟; 郭宏艳; 李纪; 朱长飞

    2011-01-01

    CuInSe2 (CIS) films with good crystalline quality were synthesized by electrodeposition followed by annealing in Se vapor at 530 C. The morphology, composition, crystal structure,optical and electrical properties of the CIS films were investigated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, UV-VISNIR spectroscopy, and admittance spectroscopy. The results revealed that the annealed CIS films had chalcopyrite structure and consisted of relatively large grains in the range of 500-1000 nm and single grain of films extend usually through the whole film thickness. The band gap of CIS films was 0.98 eV and carrier concentration was in the order of 1016 cm-3after etching the Cu-Se compounds on the film surface. Solar cells with the structure of AZO/i-ZnO/CdS/CIS/Mo/glass were fabricated. Current density vs. voltage test under standard reported condition showed the solar cells with an area of 0.2 cm2 had a conversion efficiency of 0.96%. The underlying physics was also discussed.

  16. Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, March 1, 1992--April 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Morel, D L; Ferekides, C S [University of South Florida, Tampa, FL (United States)

    1996-01-01

    This report describes work performed by the University of South Florida to develop a manufacturing-friendly fabrication process for CuInSe{sub 2} (CIS) solar cells. The process developed under this project uses conventional deposition processes and equipment, does not require stringent process control, and uses elemental Se as the selenium source. The authors believe it can be readily scaled up using off-the-shelf processing equipment and that it will meet the low manufacturing-cost objectives. Another significant achievement under this project was the development of a reactive sputtering deposition technology for ZnO. ZnO is used in many solar cell devices, and sputtering is a desirable manufacturing technology. The application of sputtering has been limited because conventional deposition uses ceramic targets that result in low sputtering rates. The use of Zn metal as the target in reactive sputtering overcomes this limitation. The authors have demonstrated that ZnO deposited by reactive sputtering has state-of-the-art opto-electronic properties. These developments result in large-area uniformity and optimized performance and provide a significant opportunity for applying and commercializing the technology. The second objective of this project was to fabricate high-efficiency CdTe solar cells using manufacturing-friendly processes. Three deposition processes were used to deposit CdS films: chemical bath deposition, rf sputtering, and close-spaced sublimation (CSS). The CdTe films were deposited by CSS. A cell with a record efficiency of 15.8% was obtained.

  17. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  18. Electrodeposited platinum thin films with preferential (100) orientation: Characterization and electrocatalytic properties for ammonia and formic acid oxidation

    Science.gov (United States)

    Bertin, Erwan; Garbarino, Sébastien; Guay, Daniel; Solla-Gullón, José; Vidal-Iglesias, Francisco J.; Feliu, Juan M.

    2013-03-01

    The electrocatalytic activity of preferentially oriented {100} Pt electrodes for the electro-oxidation of ammonia (0.2 M NaOH + 0.1 M NH3) and formic acid (0.5 M HCOOH + 0.5 M H2SO4) was assessed. They were prepared without using any surfactant through potentiostatic deposition (Ed = -0.10 V vs RHE, [HCl] = 10 mM and [Na2PtCl6·6H2O] = 0.5 mM) and by varying the deposition charge. For comparison, polycrystalline Pt thin films were prepared using the same solution but with Ed = +0.10 V vs RHE. Quantification of the fraction of (111) and (100) sites was performed by bismuth irreversible adsorption and deconvolution of the hydrogen region, respectively. Samples with as much as 47% of (100) surface sites were obtained. The preferential orientation was further confirmed by CO stripping voltammetry that exhibits similar characteristic features, as well as a similar potential of zero total charge than those expected for a preferential (100) surface. As compared to polycrystalline Pt, the occurrence of Pt (100) surface sites leads to an electrocatalytic activity enhancement by a factor of 4.8 and 2.6 (expressed as μA cmPt-2) for the oxidation of ammonia and formic acid, respectively.

  19. Temperature dependent electroreflectance study of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Raadik, T., E-mail: taavi.raadik@ttu.ee [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J.; Josepson, R.; Hiie, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Potlog, T.; Spalatu, N. [Moldova State University, A. Mateevici str. 60, MD-2009 Chisinau (Moldova, Republic of)

    2013-05-01

    Cadmium telluride is a promising material for large scale photovoltaic applications. In this paper we study CdS/CdTe heterojunction solar cells with electroreflectance spectroscopy. Both CdS and CdTe layers in solar cells were grown sequentially without intermediate processing by the close-space sublimation method. Electroreflectance measurements were performed in the temperature range of T = 100–300 K. Two solar cells were investigated with conversion efficiencies of 4.1% and 9.6%. The main focus in this work was to study the temperature dependent behavior of the broadening parameter and the bandgap energy of CdTe thin film in solar cells. Room temperature bandgap values of CdTe were E{sub g} = 1.499 eV and E{sub g} = 1.481 eV for higher and lower efficiency solar cells, respectively. Measured bandgap energies are lower than for single crystal CdTe. The formation of CdTe{sub 1−x}S{sub x} solid solution layer on the surface of CdTe is proposed as a possible cause of lower bandgap energies. - Highlights: ► Temperature dependent electroreflectance measurements of CdS/CdTe solar cells ► Investigation of junction properties between CdS and CdTe ► Formation of CdTe{sub 1−} {sub x}S{sub x} solid solution layer in the junction area.

  20. 电沉积制备TiO2薄膜及其光电性能研究%PREPARATION OF TiO2 THIN FILMS BY ELECTRODEPOSITING AND THEIR PHOTOVOLTAIC PROPERTIES

    Institute of Scientific and Technical Information of China (English)

    张林森; 刘贇; 王力臻; 董会超; 李素珍

    2013-01-01

    TiO2 thin films were deposited on the conductive glass substrate by cathodic electrodepositing and their performances as the photoanodes of dye-sensitized solar cells (DSSCs) were investigated. The structure, surface morphology, generation process and photovoltaic property of the TiO2 thin films were characterized by thermal analysis (TG-DTG), X-ray diffraction (XRD), scanning electron microscopy (SEM), electrochemical impedance spectra (EIS) and current-voltage curve (I-V). The results showed that Ti(OH)3 thin films prepared by electrodepositing on FTO are amorphous and uniform, and the last sample by heat treatment is TiO2. TiO2 thin films in DSSC have best photovoltaic properties than other titanium oxide, because the charge transfer impedance of TiO2/dye/electrolyte interface is least.%采用阴极电沉积在导电玻璃上制备TiO2薄膜,作为光阳极组装染料敏化太阳电池(DSSC).通过TG-DTG、XRD、SEM、EIS和I-V曲线研究TiO2的结构形貌和生成历程及其在DSSC中的光电性能.结果表明:电沉积薄膜是非晶态Ti(OH)3,经过热处理后得到TiO2薄膜,薄膜颗粒大小均匀.TiO2薄膜组装的DSSC比其他价态钛的氧化物表现出较好的光电性能,主要是因为TiO2/染料/电解液界面的电荷转移电阻最小.

  1. Recent Advances in Superhydrophobic Electrodeposits

    OpenAIRE

    Jason Tam; Gino Palumbo; Uwe Erb

    2016-01-01

    In this review, we present an extensive summary of research on superhydrophobic electrodeposits reported in the literature over the past decade. As a synthesis technique, electrodeposition is a simple and scalable process to produce non-wetting metal surfaces. There are three main categories of superhydrophobic surfaces made by electrodeposition: (i) electrodeposits that are inherently non-wetting due to hierarchical roughness generated from the process; (ii) electrodeposits with plated surfa...

  2. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    OpenAIRE

    Songbai Hu; Zhe Zhu; Wei Li; Lianghuan Feng; Lili Wu; Jingquan Zhang; Jingjing Gao

    2011-01-01

    Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries d...

  3. 利用碳糊成膜法改进CdTe太阳电池背处理工艺%Back contact process of CdTe solar cell using the carbon-paste film forming

    Institute of Scientific and Technical Information of China (English)

    罗翀; 李娟; 李翔; 姚素英; 熊绍珍

    2011-01-01

    提出一种新型的制备Cd%太阳电池背接触方法。利用碳糊成膜法,将含Cu、Te的CdCl2浆状悬浊液涂覆在CdTe表面,只进行一次后退火,X射线衍射(XRD)、二次质子谱(SIMS)测试发现,就能同时达到CdCl2后处理的作用、形成CuxTe的缓冲层和降低背接触势垒的目的。实验结果表明。本文方法将传统的CdCl2后处理和形成CujWe缓冲层工艺合二为一,制备的CdTe太阳电池含较好控制了的Cu扩散,提高了电池性能;且制备工艺简单易行,可以较显著地降低成本,适合大面积生产。%A new method to prepare CdTe solar cell based on the carbon-paste film forming is introduced in this article. According to the analysis by XRD and SIMS spectrum,it was indicated that this technology integrates deposition of the back contact and CdC12 treatment into one process, which can not only form CuxTe layer but also activate with CdC12 simultaneously. In addition,it can control the diffusion of Cu,which could increase the efficiency. This simple method has the possible application in CdTe solar cell industry.

  4. Electrodeposition of platinum and silver into chemically modified microporous silicon electrodes

    OpenAIRE

    Koda, Ryo; Fukami, Kazuhiro; Sakka, Tetsuo; Ogata, Yukio H.

    2012-01-01

    Electrodeposition of platinum and silver into hydrophobic and hydrophilic microporous silicon layers was investigated using chemically modified microporous silicon electrodes. Hydrophobic microporous silicon enhanced the electrodeposition of platinum in the porous layer. Meanwhile, hydrophilic one showed that platinum was hardly deposited within the porous layer, and a film of platinum on the top of the porous layer was observed. On the other hand, the electrodeposition of silver showed simil...

  5. 2012 ELECTRODEPOSITION GORDON RESEARCH CONFERENCE AND GORDON RESEARCH SEMINAR, JULY 29 - AUGUST 3, 2012

    Energy Technology Data Exchange (ETDEWEB)

    Gewirth, Andrew

    2013-08-03

    The 2012 Gordon Conference on Electrodeposition: Electrochemical Materials Synthesis and Applications will present cutting-edge research on electrodeposition with emphasis on (i) advances in basic science, (ii) developments in next-generation technologies, and (iii) new and emerging areas. The Conference will feature a wide range of topics, from atomic scale processes, nucleation and growth, thin film deposition, and electrocrystallization, to applications of electrodeposition in devices including microelectronics, batteries, solar energy, and fuel cells.

  6. RF sputtering deposition of CdTe on GaAs substrate

    Science.gov (United States)

    Adamiec, Krzysztof; Rutkowski, Jaroslaw; Bednarek, S.; Michalski, E.

    1997-06-01

    The fabrication of HgCdTe IR detectors demands high-quality CdTe or CdZnTe substrates. Bulk CdTe tends to twin, therefore large single crystals are generally not available. This problem could be circumvented by growing CdTe epilayers on an alternative large area substrate. Several studies have been made on the growth of CdTe on different substrates such as InSb, GaAs, Si and sapphire by MOCVD and MBE techniques. We report the initial results for the growth of CdTe buffer films on GaAs (100) substrates by sputter epitaxy. This crystal was chosen as the substrate material because of its transparency to IR radiation and availability as large area wafers with high structural perfection. Epitaxial films of CdTe were deposited in a sputtering system with a base pressure of 2 X 10-4 Pa. The GaAs substrate was degreased, etched in standard solution, and mounted immediately on a cooper substrate holder in the system. The substrates were ion etched in the sputtering system to remove surface oxide. The CdTe films were deposited in a wide substrate temperature range from 50 to 450 degrees C. Film thickness ranged from 0.1 to 5 micrometers , and deposition rates from 1 to 5 micrometers /h. The orientations and crystalline quality epitaxial films were characterized by x-ray diffraction. The surface morphology and the cross section of the gown CdTe layers were investigated by Nomarski interference contrast microscope. The optical and the electrical properties of the epitaxial films were investigated too. Structural characterization reveals that crystalline quality is a function of temperature of substrates. The single-crystals films grown at 300 degrees C on GaAs showed a best surface morphology.

  7. CdS薄膜的制备及其在CdTe电池中的应用%Preparation of CdS films and their application in CdTe solar cells

    Institute of Scientific and Technical Information of China (English)

    韩俊峰; 廖成; 江涛; 赵夔

    2011-01-01

    The CdTe solar cell is one of the most popular thin film PV devices, and CdS is used as a suitable window layer for CdTe-based photovoltaic systems. The CdS films here were prepared by chemical bath depostion (CBD) and closed space sublimation (CSS). The complete CdTe/CdS solar cell devices were fabricated and analyzed. It was found that the films prepared by the CSS method have larger grains and better optical/electrical properties. The photoelectric conversion efficiency of such a solar cell comes up to 10.9%. The films deposited by CSS method is fast in vacuum system and suitable for commercial applications.%CdTe薄膜电池是发展最快、应用前景最好的一类太阳能电池.CdS层是CdTe电池的窗口层材.料,其薄膜质量直接影响电池的转换效率.本文介绍了化学水浴沉积(CBD)和闭空间升华(CSS)两种方法沉积CdS薄膜,并完成单电池器件的制备和测试.CSS方法制备的薄膜结晶较大,光学和电学性能好于CBD方法制备的薄膜,太阳能电池的光电转换效率达到10.9%.CSS方法镀膜速度快,真空环境工作,有利于大规模产业化应用.

  8. Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guelen, Y. [Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey); Alanyalioglu, M. [Department of Chemistry, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey); Ejderha, K. [Department of Physics, Faculty of Sciences and Arts, Bingoel University, Bingoel (Turkey); Nuhoglu, C. [Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey); Turut, A., E-mail: aturut@atauni.edu.tr [Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey)

    2011-02-10

    Research highlights: > The diffraction profile of the PbS thin film from XRD experiments has been extracted. > An optical energy band gap value of the PbS film was obtained from the optical absorption spectra. > The Au/PbS/n-6H-SiC Schottky diodes have been formed. > The Schottky barrier height increase has been succeeded by the PbS interlayer. - Abstract: To realize Schottky barrier height (SBH) modification in the Au/n-6H-SiC Schottky diodes, lead sulfide (PbS) thin films were grown on n-6H-SiC by electrodeposition method. At first, XRD experiments were performed to investigate the crystal structure of the PbS film electrodeposited on n-6H-SiC. It has been deduced from the diffraction profile that the PbS thin film has a crystal structure more strongly oriented along the [2 0 0] direction. An optical energy band gap value of 1.42 eV for the PbS film was obtained from its optical absorption spectra. Then, we have prepared Au/PbS/n-6H-SiC Schottky barrier diodes (SBDs) with interface layer and reference Au/n-6H-SiC/Ni SBDs. The SBH enhancement has been succeeded by the PbS interlayer, influencing the space charge region of the SiC. The SBH values of 1.03 and 0.97 eV for the samples with and without the interfacial PbS layer were obtained from the forward bias current-voltage (I-V) characteristics. The SBH increase in the Au/PbS/n-6H-SiC SBD with the interfacial PbS layer has been attributed to the fact that the interface states contain a net negative interface charge in metal/n-type semiconductor contact due to the presence of the interfacial PbS layer.

  9. Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate

    International Nuclear Information System (INIS)

    Research highlights: → The diffraction profile of the PbS thin film from XRD experiments has been extracted. → An optical energy band gap value of the PbS film was obtained from the optical absorption spectra. → The Au/PbS/n-6H-SiC Schottky diodes have been formed. → The Schottky barrier height increase has been succeeded by the PbS interlayer. - Abstract: To realize Schottky barrier height (SBH) modification in the Au/n-6H-SiC Schottky diodes, lead sulfide (PbS) thin films were grown on n-6H-SiC by electrodeposition method. At first, XRD experiments were performed to investigate the crystal structure of the PbS film electrodeposited on n-6H-SiC. It has been deduced from the diffraction profile that the PbS thin film has a crystal structure more strongly oriented along the [2 0 0] direction. An optical energy band gap value of 1.42 eV for the PbS film was obtained from its optical absorption spectra. Then, we have prepared Au/PbS/n-6H-SiC Schottky barrier diodes (SBDs) with interface layer and reference Au/n-6H-SiC/Ni SBDs. The SBH enhancement has been succeeded by the PbS interlayer, influencing the space charge region of the SiC. The SBH values of 1.03 and 0.97 eV for the samples with and without the interfacial PbS layer were obtained from the forward bias current-voltage (I-V) characteristics. The SBH increase in the Au/PbS/n-6H-SiC SBD with the interfacial PbS layer has been attributed to the fact that the interface states contain a net negative interface charge in metal/n-type semiconductor contact due to the presence of the interfacial PbS layer.

  10. Homo-epitaxial growth of CdTe by sublimation under low pressure

    Science.gov (United States)

    Yoshioka, Yasushi; Yoda, Hiroki; Kasuga, Masanobu

    1991-12-01

    A new method to obtain a twin-free single crystal of CdTe on a CdTe substrate by sublimation is described. When CdTe(111)A substrates were employed for the homo-epitaxial growth of CdTe, twin crystals were frequently obtained. The substrate of CdTe(211)A and (211)B, however, gave no twins resulting in single crystals of high quality. The difference may come from the existence of many steps, sufficient to suppress two-dimensional nucleation and to promote step flow mechanism. To obtain twin-free films, therefore, a fairly large tilt angle of the substrate from a singular plane and a fairly low supersaturation are essential.

  11. 温场均匀性对CdTe薄膜及太阳电池性能的影响%Effect of the Uniformity of Temperature Field on the Properties of CdTe Films and Solar Cells

    Institute of Scientific and Technical Information of China (English)

    李愿杰; 郑家贵; 冯良桓; 黎兵; 曾广根

    2009-01-01

    The transformation of preparation temperature field of large area CdTe films was simulated, and the effect of temperature field' s uniformity on CdS/CdTe solar cells was investigated by the characteration of I -V,C -V and Deep Level Transient Spectroscopy(DLTS). The result showed that the uniformity of temperature field has effect on Isc and FF, but lacks impact on Voc. Least dark saturated current density,more higher carrier concentration and better photovoltaie performance were observed in the sample prepared at 580℃ ; The response of deep-level impuri-ties in CdTe films is consistent with temperature and frequency, but the sample(580 ℃) has less deep-level impu-rities' recombination because of lower hole trap concentration. 8.2% efficiency of the CdS/CdTe solar cells was reached by improved the uniformity of temperature field.%采用近空间升华法(CSS)制备CdTe多晶薄膜,模拟制备过程中的温场变化,结合,I-V、C-V特性及深能级瞬态谱研究温场均匀性对CdS/CdTe太阳电池性能的影响.结果表明,温场分布和薄膜厚度分布基本一致,温场均匀性对电池组件的开路电压影响不大,对短路电流和填充因子有影响,CdTe薄膜的深中心对温度和频率的响应基本一致.580℃制备的样品暗饱和电流密度最小,载流子浓度较高,光电特性较好,而且空穴陷阱浓度较低,深中心复合作用较小.通过改进温场的均匀性能够制备出组件转换效率为8.2%的CdS/CdTe太阳电池.

  12. Lithographically patterned nanowire electrodeposition

    Science.gov (United States)

    Xiang, Chengxiang

    Lithographically patterned nanowire electrodeposition (LPNE) is a new method for fabricating polycrystalline metal nanowires using electrodeposition. In LPNE, a sacrificial metal (M1 = silver or nickel) layer, 5 - 100 nm in thickness, is first vapor deposited onto a glass, oxidized silicon, or Kapton polymer film. A photoresist (PR) layer is then deposited, photopatterned, and the exposed Ag or Ni is removed by wet etching. The etching duration is adjusted to produce an undercut ≈300 nm in width at the edges of the exposed PR. This undercut produces a horizontal trench with a precisely defined height equal to the thickness of theM1 layer. Within this trench, a nanowire of metal M2 is electrodeposited (M2 = gold, platinum, palladium, or bismuth). Finally the PR layer and M1 layer are removed. The nanowire height and width can be independently controlled down to minimum dimensions of 5 nm (h) and 11 nm (w), for example, in the case of platinum. These nanowires can be 1 cm in total length. We measure the temperature-dependent resistance of 100 um sections of Au and Pd wires in order to estimate an electrical grain size for comparison with measurements by X-ray diffraction and transmission electron microscopy. Nanowire arrays can be postpatterned to produce two-dimensional arrays of nanorods. Nanowire patterns can also be overlaid one on top of another by repeating the LPNE process twice in succession to produce, for example, arrays of low-impedance, nanowirenanowire junctions. The resistance, R, of single gold nanowires was measured in situ during electrooxidation in aqueous 0.10 M sulfuric acid. Electrooxidation caused the formation of a gold oxide that is approximately 0.8 monolayers (ML) in thickness at +1.1 V vs saturated mercurous sulfate reference electrode (MSE) based upon coulometry and ex situ X-ray photoelectron spectroscopic analysis. As the gold nanowires were electrooxidized, R increased by an amount that depended on the wire thickness, ranging from

  13. 硫代乙酰胺体系电沉积法制备CdS纳米膜%Preparation of CdS Nanoparticle Film by Electrodeposition in CH3CSNH2 System

    Institute of Scientific and Technical Information of China (English)

    栾野梅; 安茂忠; 张文吉; 乐士儒; 杨敏

    2005-01-01

    The film of surface active agents spread out on the surface of the electrolyte of Thioacetamide and cadmium chloride. CdS nanofilm was deposited at the interface of surface active agents and electrolyt by the method of electrodeposition. The optimal conditions on which the nanofihn was prepared of the least crystals and uniform particles could be attained via analytical results of L16(45) orthogonal experiments. The optimal conditions: castor oil/hexadecanoll 0.06 mL.cm-2 CdCl2/CH3CSNH2 4 mmol·L-1, cell voltage 5 V, electrodeposition temperature 15℃. The effects on the grain size of temperature, surface-active agent, electrodyte concentration, cell voltage and pH become smaller in the series. If the temperature was high, the movement of molecules of surface-active agent and electrodyte would be faster, thus the preparation of the film would be difficult. The grain size of thinfilm varied with the surface-active agents, however, when the amount of surface-active agents reached a certain value, the grain size would remain unchanged. The higher the electrodyte concentration, the larger the grain size of nanofilm. The surface forms were changed at the same time. If the pH of the electrodyte was higher or lower, nanofilm could not be prepared successfully, thus the pH range should be is 3-6. SEM image of the nanofilm shows the occurance of dendrite. The sucessful preparation of nanofihn is closely related to the nature of surface activre agent due to the nanofilm growth mechanism.

  14. High-density gold nanowire arrays by lithographically patterned nanowire electrodeposition.

    Science.gov (United States)

    Hujdic, Justin E; Sargisian, Alan P; Shao, Jingru; Ye, Tao; Menke, Erik J

    2011-07-01

    Here we describe a new method for preparing multiple arrays of parallel gold nanowires with dimensions and separation down to 50 nm. This method uses photolithography to prepare an electrode consisting of a patterned nickel film on glass, onto which a gold and nickel nanowire array is sequentially electrodeposited. After the electrodeposition, the nickel is stripped away, leaving behind a gold nanowire array, with dimensions governed by the gold electrodeposition parameters, spacing determined by the nickel electrodeposition parameters, and overall placement and shape dictated by the photolithography.

  15. Technology support for high-throughput processing of thin-film CdTe PV modules: Annual technical report, Phase 1, 1 April 1998--31 March 1999

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Powell, R.C.; Grecu, D.; Jayamaha, U.; Hanak, J.J.; Bohland, J.; Smigielski, K.; Dorer, G.L.

    1999-10-25

    This report describes work performed by First Solar, L.L.C., during Phase 1 of this 3-year subcontract. The research effort of this subcontract is divided into four areas: (1) process and equipment development, (2) efficiency improvement, (3) characterization and analysis, and (4) environmental, health, and safety. As part of the process development effort, the output of the pilot-production facility was increased. More than 6,200 8-ft{sup 2} CdS/CdTe plates were produced during Phase 1--more than double the total number produced prior to Phase 1. This increase in pilot-production rate was accomplished without a loss in the PV conversion efficiency: the average total-area AM1.5 efficiency of sub-modules produced during the reporting period was 6.4%. Several measurement techniques, such as large-area measurement of CdS thickness, were developed to aid process improvement, and the vapor-transport deposition method was refined. CdTe thickness uniformity and reproducibility were improved. From a population of more than 1,100 plates, the mean standard deviation within a plate was 7.3% and the standard deviation of individual-plate averages was 6.8%. As part of the efficiency-improvement task, research was done on devices with thin-CdS and buffer layers. A cell with 13.9% efficiency was produced on a high-quality substrate, and higher than 12% efficiency was achieved with a cell with no CdS layer. A number of experiments were performed as part of the characterization and analysis task. The temperature dependence of CdTe modules was investigated; the power output was found to be relatively insensitive (<5%) to temperature in the 25 to 50 C range. As part of the characterization and analysis task, considerable effort was also given to reliability verification and improvement. The most carefully monitored array, located at the NREL, was found to have unchanged power output within the margin of error of measurement (5%) after 5 years in the field. The first round of National

  16. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2012-12-15

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

  17. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    International Nuclear Information System (INIS)

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic–organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of ∼ 40% to ∼ 50% in the visible region between 450 and 700 nm. The current–voltage (I–V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range − 4 V to + 4 V. The I–V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: ► Semitransparent inorganic–organic heterojunction thin film diodes investigated ► n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction ► Diodes exhibited an optical transmission of ∼ 40%–∼ 50% in the visible region ► Heterojunction current–voltage features show good rectifying diode characteristics ► A forward to reverse current ratio as high as 35 (− 4 V to + 4 V range) was attained

  18. Physical properties of transparent conducting Cd-Te-In-O thin films

    International Nuclear Information System (INIS)

    Cd-Te-In-O thin films are grown by pulsed laser deposition using a composite target of CdTe powder embedded in an indium matrix. Oxygen pressures range from 2.00 to 6.67 Pa at a substrate temperature of 420 oC. The structure, optical transmission and sheet resistance of the films are measured. Substitutional compounds with In2-2x(Cd,Te)2xO3 stoichiometry are found at high oxygen pressures. A ternary phase diagram of the CdO-In2O3-TeO2 system shows the relationship between the structure and the stoichiometry of the films. To evaluate film performance, a figure of merit is proposed based on the relationship between the integral photonic flux and the sheet resistance. The best figure of merit values corresponds to a sample prepared at 3.8 Pa O2 that consists of (In2O3)0.3(CdTe2O5)0.7 and exhibits an optical band gap of 3.0 eV. This sample is a suitable substrate for electrodeposition due to its good electrochemical stability.

  19. Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

    1992-09-01

    This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

  20. Preparation of thin films, with base to precursor materials of type Cu-In-Se elaborated by electrodeposition for the solar cells elaboration; Preparacion de peliculas delgadas, con base a materiales precursores del tipo Cu-In-Se, elaboradas por electrodeposito para la elaboracion de celdas solares

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, A.M. [Centro de Investigaciones en Energia, Universidad Nacional Autonoma de Mexico. Av. Xochicalco s/n. 62580 Temixco, Morelos (Mexico)

    1999-11-01

    Thin films of chalcogenide compounds are promising because they have excellent optoelectronic characteristics to be applied in solar cells. In particular, CuInSe{sub 2} and Cd Te thin films have shown high solar to electrical conversion efficiency. However, this efficiency is limited by the method of preparation, in this case, physical vapor deposition techniques are used. In order to increase the area of deposition t is necessary to use chemical methods, for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. These precursors were used to build solar cells with 7.9 % of efficiency. (Author)

  1. Effects of high-temperature annealing on ultra-thin CdTe solar cells

    International Nuclear Information System (INIS)

    High-temperature annealing (HTA), a process step prior to vapor cadmium chloride (VCC) treatment, has been found to be useful for improving the crystallinity of CdTe films and the efficiency of ultra-thin CdTe solar cells. Scanning electron microscopy, optical absorption, photoluminescence measurements and analyses on photoluminescence results using spectral deconvolution reveal that the additional HTA step produces substantial grain growth and reduces grain boundary defects. It also reduces excessive sulfur diffusion across the junction that can occur during the VCC treatment. The HTA step helps to produce pinhole-free CdTe films and reduce electrical shorts in ultra-thin CdTe solar cells. An efficiency of about 11.6% has been demonstrated for ultra-thin CdS/CdTe solar cells processed with HTA step.

  2. Effects of high-temperature annealing on ultra-thin CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xia Wei; Lin Hao; Wu, Hsiang N.; Tang, Ching W., E-mail: chtang@che.rochester.edu

    2011-10-31

    High-temperature annealing (HTA), a process step prior to vapor cadmium chloride (VCC) treatment, has been found to be useful for improving the crystallinity of CdTe films and the efficiency of ultra-thin CdTe solar cells. Scanning electron microscopy, optical absorption, photoluminescence measurements and analyses on photoluminescence results using spectral deconvolution reveal that the additional HTA step produces substantial grain growth and reduces grain boundary defects. It also reduces excessive sulfur diffusion across the junction that can occur during the VCC treatment. The HTA step helps to produce pinhole-free CdTe films and reduce electrical shorts in ultra-thin CdTe solar cells. An efficiency of about 11.6% has been demonstrated for ultra-thin CdS/CdTe solar cells processed with HTA step.

  3. Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells

    International Nuclear Information System (INIS)

    Zinc telluride (ZnTe) thin films have been deposited on glass/conducting glass substrates using a low-cost electrodeposition method. The resulting films have been characterized using various techniques in order to optimize growth parameters. X-ray diffraction (XRD) has been used to identify the phases present in the films. Photoelectrochemical (PEC) cell and optical absorption measurements have been performed to determine the electrical conductivity type, and the bandgap of the layers, respectively. It has been confirmed by XRD measurement that the deposited layers mainly consist of ZnTe phases. The PEC measurements indicate that the ZnTe layers are p-type in electrical conduction and optical absorption measurements show that their bandgap is in the range 2.10-2.20 eV. p-Type ZnTe window materials have been used in CdTe based solar cell structures, following new designs of graded bandgap multi-layer solar cells. The structures of FTO/ZnTe/CdTe/metal and FTO/ZnTe/CdTe/CdHgTe/metal have been investigated. The results are presented in this paper using observed experimental data

  4. Advances in polycrystalline thin-film photovoltaics for space applications

    Science.gov (United States)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  5. Recent Advances in Superhydrophobic Electrodeposits

    Directory of Open Access Journals (Sweden)

    Jason Tam

    2016-03-01

    Full Text Available In this review, we present an extensive summary of research on superhydrophobic electrodeposits reported in the literature over the past decade. As a synthesis technique, electrodeposition is a simple and scalable process to produce non-wetting metal surfaces. There are three main categories of superhydrophobic surfaces made by electrodeposition: (i electrodeposits that are inherently non-wetting due to hierarchical roughness generated from the process; (ii electrodeposits with plated surface roughness that are further modified with low surface energy material; (iii composite electrodeposits with co-deposited inert and hydrophobic particles. A recently developed strategy to improve the durability during the application of superhydrophobic electrodeposits by controlling the microstructure of the metal matrix and the co-deposition of hydrophobic ceramic particles will also be addressed.

  6. SU-E-T-231: Measurements of Gold Nanoparticle-Mediated Proton Dose Enhancement Due to Particle-Induced X-Ray Emission and Activation Products Using Radiochromic Films and CdTe Detector

    Energy Technology Data Exchange (ETDEWEB)

    Cho, J; Cho, S [Dept. of Radiation Physics, UT MD Anderson Cancer Center, Houston, TX (United States); Manohar, N [Dept. of Radiation Physics, UT MD Anderson Cancer Center, Houston, TX (United States); Medical Physics Program, Georgia Institute of Technology, Atlanta, GA (Georgia); Krishnan, S [Dept. of Radiation Oncology, UT MD Anderson Cancer Center, Houston, TX (United States)

    2014-06-01

    Purpose: There have been several reports of enhanced cell-killing and tumor regression when tumor cells and mouse tumors were loaded with gold nanoparticles (GNPs) prior to proton irradiation. While particle-induced xray emission (PIXE), Auger electrons, secondary electrons, free radicals, and biological effects have been suggested as potential mechanisms responsible for the observed GNP-mediated dose enhancement/radiosensitization, there is a lack of quantitative analysis regarding the contribution from each mechanism. Here, we report our experimental effort to quantify some of these effects. Methods: 5-cm-long cylindrical plastic vials were filled with 1.8 mL of either water or water mixed with cylindrical GNPs at the same gold concentration (0.3 mg Au/g) as used in previous animal studies. A piece of EBT2 radiochromic film (30-µm active-layer sandwiched between 80/175-µm outer-layers) was inserted along the long axis of each vial and used to measure dose enhancement due to PIXE from GNPs. Vials were placed at center-of-modulation (COM) and 3-cm up-/down-stream from COM and irradiated with 5 different doses (2–10 Gy) using 10-cm-SOBP 160-MeV protons. After irradiation, films were cleaned and read to determine the delivered dose. A vial containing spherical GNPs (20 mg Au/g) was also irradiated, and gamma-rays from activation products were measured using a cadmium-telluride (CdTe) detector. Results: Film measurements showed no significant dose enhancement beyond the experimental uncertainty (∼2%). There was a detectable activation product from GNPs, but it appeared to contribute to dose enhancement minimally (<0.01%). Conclusion: Considering the composition of EBT2 film, it can be inferred that gold characteristic x-rays from PIXE and their secondary electrons make insignificant contribution to dose enhancement. The current investigation also suggests negligible dose enhancement due to activation products. Thus, previously-reported GNP-mediated proton dose

  7. Recent developments in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. (Inst. Militar de Engenharia, Rio de Janeiro, RJ (Brazil))

    1990-12-15

    In recent years, remarkable progress has been made in improving the photovoltaic (PV) conversion efficiencies of thin film solar cells. The best active-area efficiencies (air mass 1.5) of thin film solar cells reported are as follows: polycrystalline CuInSe{sub 2}, 14.1%; CuIn(Ga)Se{sub 2}, 12.9%; CdTe, 12.3%, total area; single-junction hydrogenated amorphous silicon (a-Si:H), 12.0%; multiple-junction a-Si:H, 13.3%; cleaved epitaxial GaAs-Ga{sub 1-x}Al{sub x}As, 21.5%, total area. Laboratory methods for preparing small thin film solar cells are evaporation, closed-space sublimation, closed-space vapor transport, vapor phase epitaxy and metallo-organic chemical vapor deposition, while economic large-area deposition techniques such as sputtering, glow discharge reduction, electrodeposition, spraying and screen printing are being used for module fabrication. The following aperture-area efficiencies have been measured, at the Solar Energy Research Inst., for thin film modules: a-Si:H, 9.8%, 933 cm{sup 2}; CuIn(Ga)Se{sub 2}, 11.1%, 938 cm{sup 2}; CdTe, 7.3%, 838 cm{sup 2}. The instability issue of a-Si:H continues to be a high priority area. It is necessary to improve the open-circuit voltage of CuIn(Ga)Se{sub 2} cells, which do not seem to exhibit any intrinsic degradation mechanisms. With continued progress and increased production, PV modules are likely to become competitive for medium-scale power requirements in the mid-1990s. (orig.).

  8. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

    1992-04-01

    This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

  9. A quantitative study of the microstructure and crystallographic fiber texture in nickel electrodeposits used in radio-frequency MEMS switches, including a new transmission electron microscopy (TEM) technique for polycrystalline films

    Science.gov (United States)

    Cantwell, Patrick R.

    The microstructure of electrodeposited nickel films in radio-frequency (RF) microelectromechanical systems (MEMS) switches has been quantitatively studied to inform and validate multi-scale, multi-physics computer simulations that aim to predict the lifetime and failure mechanisms of the RF MEMS switches. The RF MEMS switches are currently under study at the Purdue University center for the Prediction of Reliability, Integrity, and Survivability of Microsystems (PRISM). An array of microstructural characterization techniques including focused ion beam (FIB) microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy have be used to study the nickel film and to quantify grain size and crystallographic texture and provide information about elemental impurities and surface roughness and impurity elements. Particular emphasis has been placed on quantifying the crystallographic fiber texture of the polycrystalline nickel film as a function of film height within a single specimen using a new transmission electron microscopy (TEM) microtexture method. The TEM method employs a special type of plan view TEM sample and uses hollow cone dark field (HCDF) TEM imaging to spatially map the orientation of individual crystallites at discrete film heights. A trend of increasing 001 fiber texture with film height was discovered, which has implications for the elastic behavior of the MEMS device. The method can be applied to study fiber texture evolution as a function of height in polycrystalline films to gather data that may elucidate fundamental film growth mechanisms. The method is explained in detail. It is well-known that the elastic properties of polycrystalline thin films used in MEMS devices can deviate from bulk isotropic values and become directionally-dependent if a crystallographic texture is present. Hence, the ability to predict the actual anisotropic elastic properties of textured films is important for MEMS design and

  10. Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

    Directory of Open Access Journals (Sweden)

    Songbai Hu

    2011-12-01

    Full Text Available Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries diffuse deeply in the CdTe layer, and more photogenerated electrons and holes are separated by the segregated SbCd+ donors into the GBs. What is more, the doping concentration in the vicinity of the CdTe/CdS heterojunction increases for the formation of substitutional SbTe- acceptors under the Cd-rich conditions. For the introduction of the p-type Sb2Te3 layers as the back contact to the CdTe thin film solar cells, the performance of CdTe thin film solar cells has been greatly improved and an efficiency of 13.1% (FF=62.3%, Jsc=25.8 mA/cm2, Voc= 815.8 mV obtained.

  11. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  12. Photoluminescence study of Cu diffusion in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Grecu, D.; Compaan, A.D. [Department of Physics, University of Toledo, Toledo, Ohio (United States)

    1999-03-01

    We report changes in the photoluminescence spectra associated with the diffusion of Cu in CdTe thin films used in CdTe/CdS solar cells. Films grown by vapor transport deposition and radio-frequency sputtering as well as single crystal CdTe were included in the study. The main effects of Cu diffusion appear to be the quenching of a donor-acceptor transition associated with Cd vacancies and the increase in intensity of a lower energy broad-band transition. The PL is subsequently used to explore the effects of electric fields on Cu diffusion. The role of Te as a diffusion barrier for Cu is investigated. {copyright} {ital 1999 American Institute of Physics.}

  13. Dependence of CdTe response of bias history

    Energy Technology Data Exchange (ETDEWEB)

    Sites, J.R.; Sasala, R.A.; Eisgruber, I.L. [Colorado State Univ., Boulder, CO (United States)

    1995-11-01

    Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependent effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.

  14. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    International Nuclear Information System (INIS)

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Manufacturing of CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bonnet, D. [ANTEC Solar GmbH, Rudisleben (Germany)

    2000-02-21

    Due to its basic physical and chemical properties CdTe has become a favoured base material for thin film solar cells, using robust, high-throughput manufacturing procedures. The technology shows significant potential for attaining cost levels of <0.5 Euro/W{sub p}. Close-spaced sublimation (CSS) is the fastest and simplest deposition process for both semiconductors used, CdTe and CdS, permitting in-line production at a high linear speed of about 1 m/min. The individual manufacturing steps for integrated modules are explained in view of their incorporation into the production line. ANTEC solar GmbH is engaged to enter the production of CdTe thin film modules on a scale of 10 MW{sub p} (100000 m{sup 2}) per annum, using CSS as the deposition procedure for the semiconductor films, and high-rate in-line sputtering for transparent and opaque contacts. Standard module size will be 60 x 120 cm{sup 2}. The production line is presently under construction. (orig.)

  16. High efficiency CSS CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C.S.; Marinskiy, D.; Viswanathan, V.; Tetali, B.; Palekis, V.; Selvaraj, P.; Morel, D.L. [University of South Florida, Tampa, FL (United States). Dept. of Electrical Engineering

    2000-02-21

    Cadmium telluride (CdTe) has long been recognized as a strong candidate for thin film solar cell applications. It has a bandgap of 1.45 eV, which is nearly ideal for photovoltaic energy conversion. Due to its high optical absorption coefficient essentially all incident radiation with energy above its band-gap is absorbed within 1-2 {mu}m from the surface. Thin film CdTe solar cells are typically heterojunctions, with cadmium sulfide (CdS) being the n-type junction partner. Small area efficiencies have reached the 16.0% level and considerable efforts are underway to commercialize this technology. This paper will present work carried out at the University South Florida sponsored by the National Renewable Energy Laboratory of the United States Department of Energy, on CdTe/CdS solar cells fabricated using the close spaced sublimation (CSS) process. The CSS technology has attractive features for large area applications such as high deposition rates and efficient material utilization. The structural and optical properties of CSS CdTe and CdS films and junctions will be presented and the influence of some important CSS process parameters will be discussed. (orig.)

  17. Solution-Processed, Ultrathin Solar Cells from CdCl3(-)-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3(-) Ligands.

    Science.gov (United States)

    Zhang, Hao; Kurley, J Matthew; Russell, Jake C; Jang, Jaeyoung; Talapin, Dmitri V

    2016-06-22

    Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer. PMID:27269672

  18. 加载控制模式对电沉积镍薄膜力学性能测试的影响%The effect of control modules in determining mechanical properties of electrodeposited nickel films by indentation

    Institute of Scientific and Technical Information of China (English)

    赵冠湘; 黄勇力; 马增胜; 周益春

    2011-01-01

    为研究深度和载荷2种加载控制模式对样品硬度和杨氏模量测试结果的影响,选取了厚度为6μm的电沉积镍薄膜为样品,采用美国Hysitron公司生产的TriboIndenter型压痕仪进行压痕试验.结果表明:因薄膜和基底2种材料的性能相差较大,随着压痕深度的增加,基底效应越来越明显;载荷控制模式下所测的硬度和杨氏模量较深度控制模式的都要大,且两性能参数中因应力松弛效应的影响硬度差别更为明显.%Under displacement and load control modules, indentation tests were performed, which on the 6 (μm electrodeposited nickel films, to study the effect of control module in determining the hardness and Young' s modulus. The results indicate that the substrate effect becomes obvious with increasing indentation depth, both the hardness and Young' s modulus tested under load control module are bigger than that under displacement control module, and the hardness is of bigger change than the Young' s modulus because of the stress relaxation.

  19. Ion-assisted doping of CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Fahrenbruch, A.L.; Chien, K.F.; Kim, D.; Lopez-Otero, A.; Sharps, P.; Bube, R.H. (Dept. of Materials Science and Engineering, Stanford Univ., CA (USA))

    1989-10-15

    The possibility of using ion-assisted doping during growth of p-CdTe films for solar cells has been investigated, to obtain higher doping densities than previously obtained with conventional film deposition processes. For the first time, controlled doping has been demonstrated with low-energy phosphorus ions to obtain hole densities of up to 2 x 10{sup 17} cm{sup -3} in homoepitaxial films deposited by vacuum evaporation on single-crystal CdTe. Solar cells made with these films suggest that ion damage reduces the diffusion length in the most highly doped films and that the active region of such cells must be made with considerably lower doping densities. For polycrystalline films on alumina, preliminary results indicate that the hole densities obtained are not sufficient to overcome grain boundary barrier limited conductivity. (orig.).

  20. Architectural Growth of Cu Nanoparticles Through Electrodeposition

    Directory of Open Access Journals (Sweden)

    Cheng Ching-Yuan

    2009-01-01

    Full Text Available Abstract Cu particles with different architectures such as pyramid, cube, and multipod have been successfully fabricated on the surface of Au films, which is the polycrystalline Au substrate with (111 domains, using the electrodeposition technique in the presence of the surface-capping reagents of dodecylbenzene sulfonic acid and poly(vinylpyrrolidone. Further, the growth evolution of pyramidal Cu nanoparticles was observed for the first time. We believe that our method might open new possibilities for fabricating nanomaterials of non-noble transition metals with various novel architectures, which can then potentially be utilized in applications such as biosensors, catalysis, photovoltaic cells, and electronic nanodevices.