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Sample records for cdse thin films

  1. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Kangkan Sarmah; Ranjan Sarma

    2009-08-01

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the energy of incident illumination, which results in the existence of two distinct trap levels. In each trap depth the energy of the trap increases linearly. It infers that there is a linear distribution of traps of different energies below the conduction band.

  2. Space charge limited conduction in CdSe thin films

    Indian Academy of Sciences (India)

    Pradip Kr Kalita; B K Sarma; H L Das

    2003-10-01

    The current ()–voltage () characteristics of thermally evaporated CdSe thin films having thickness in the range 850–3000 Å and deposited within the substrate temperature of 303–573 K show nearly linear dependence at low voltage and afterwards a non-linear behaviour at higher voltage range. A detailed study of – curves in dark and under illumination clearly reveals the mechanism as ohmic at low voltage and that of trap limited space charge limited conduction (SCLC) at higher voltage. The transition voltage () from ohmic to SCLC is found to be quite independent of ambient temperature as well as intensity of illumination. SCLC is explained on the basis of the exponential trap distribution in CdSe films. Trap depths estimated from the ln vs 103/T plots are found to be within 0.60–0.37 eV. Using the relevant SCLC theory, the carrier concentration, 0, total trap concentration, t, and the ratio of free charge to trapped charge, , have been calculated and correlated with ambient temperature and intensity of illumination.

  3. Development of CdSe thin films for application in electronic devices

    OpenAIRE

    Olusola, O. I.; O. K. Echendu; Dharmadasa, I

    2015-01-01

    Thin films of cadmium selenide (CdSe) have been deposited on fluorine-doped tin oxide (FTO)-coated glass using potentiostatic electrodeposition method. The suitable range of deposition potentials for the formation of stoichiometric layer of CdSe was established using cyclic voltammograms. The films have been characterised using X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy, atomic force microscopy and photo-electrochemical (PEC) cell techniques....

  4. Analysis of chemically deposited CdSe and CdS thin films

    CERN Document Server

    Osuji, R U

    2002-01-01

    We have successfully deposited quality polycrystalline thin films of CdSe and CdS on Corning 7059 glass slides by the electroless chemical bath technique at room temperature (~27 $^\\circ$C). X-ray analysis confirmed the successful deposition of CdSe and CdS thin films. Our grown CdSe film thickness ranged from 0.10 $\\mu$m. to 0.80 $\\pm$ 0.01 $\\mu$m and the CdS film thickness ranged from 0.10 $\\mu$m to 1.00 $\\pm$ 0.01 $\\mu$m. The scanning electron micrograph of the films reveals uniform film surface. The energy gaps, $E_g$ determined for our CdSe and CdS films have average values of 1.70 $\\pm$ 0.04 eV and 2.15 $\\pm$ 0.04 eV respectively. The films have high absorbance in the 0.35 $\\mu$m - 0.85 $\\mu$m range. These qualities make them suitable for use in thin film solar cell technology.

  5. Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates

    Indian Academy of Sciences (India)

    Y G Gudage; N G Deshpande; A A Sagade; R P Sharma; S M Pawar; C H Bhosale

    2007-08-01

    Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tin–oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction (XRD), optical absorption and photoelectrochemical (PEC) techniques. XRD study revealed that the films were polycrystalline in nature with hexagonal phase. Optical absorption study showed that CdSe films were of direct band gap type semiconductor with a band gap energy of 1.8 eV. PEC study revealed that CdSe film deposited on FTO coated glass exhibited maximum values of fill factor (FF) and efficiency () as compared to the films deposited on stainless steel and titanium substrate.

  6. Studies on the interfacial charge transfer processes of nanocrystalline CdSe thin film electrodes by intensity modulated photocurrent spectroscopy

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Interfacial charge transfer kinetics of the nanocrystalline CdSe thin film electrodes have been studied in sodium polysulfide solutions by intensity modulated photocurrent spectroscopy (IMPS). The interfacial direct and indirect charge transfer and recombination processes were analyzed in terms of the parameters: normalized steady state photocurrents and surface state lifetimes obtained by measuring the IMPS responses under different applied potentials and different solution concentrations. IMPS responses of polycrystalline CdSe thin film electrodes were also presented for comparison.

  7. Structural and optical properties of electron beam evaporated CdSe thin films

    Indian Academy of Sciences (India)

    N J Suthan Kissinger; M Jayachandran; K Perumal; C Sanjeevi Raja

    2007-12-01

    Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applications such as photo detection or solar energy conversion, due to its optical and electrical properties, as well as its good chemical and mechanical stability. In order to explore the possibility of using this in optoelectronics, a preliminary and thorough study of optical and structural properties of the host material is an important step. Based on the above view, the structural and optical properties of CdSe films have been studied thoroughly in the present work. The host material, CdSe film, has been prepared by the physical vapour deposition method of electron beam evaporation (PVD: EBE) technique under a pressure of 5 × 10-5 mbar. The structural properties have been studied by XRD technique. The hexagonal structure with a preferred orientation along the (0 0 2) direction of films has been confirmed by the X-ray diffraction analysis. The films have been analysed for optical band gap and absorbed a direct intrinsic band gap of 1.92 eV.

  8. Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

    Energy Technology Data Exchange (ETDEWEB)

    Henriquez, R., E-mail: rodrigo.henriquez@ucv.cl [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Badan, A. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Grez, P.; Munoz, E.; Vera, J. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Dalchiele, E.A.; Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Gomez, H. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile)

    2011-05-01

    Highlights: > Electrodeposition of CdSe nanocrystalline semiconductor thin films. > Polycrystalline wurtzite structure with a slight (1010) preferred orientation. > Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

  9. Increased carrier mobility and lifetime in CdSe quantum dot thin films through surface trap passivation and doping.

    Science.gov (United States)

    Straus, Daniel B; Goodwin, E D; Gaulding, E Ashley; Muramoto, Shin; Murray, Christopher B; Kagan, Cherie R

    2015-11-19

    Passivating surface defects and controlling the carrier concentration and mobility in quantum dot (QD) thin films is prerequisite to designing electronic and optoelectronic devices. We investigate the effect of introducing indium in CdSe QD thin films on the dark mobility and the photogenerated carrier mobility and lifetime using field-effect transistor (FET) and time-resolved microwave conductivity (TRMC) measurements. We evaporate indium films ranging from 1 to 11 nm in thickness on top of approximately 40 nm thick thiocyanate-capped CdSe QD thin films and anneal the QD films at 300 °C to densify and drive diffusion of indium through the films. As the amount of indium increases, the FET and TRMC mobilities and the TRMC lifetime increase. The increase in mobility and lifetime is consistent with increased indium passivating midgap and band-tail trap states and doping the films, shifting the Fermi energy closer to and into the conduction band.

  10. Determination of dispersive optical constants of nanocrystalline CdSe (nc-CdSe) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kriti; Al-Kabbi, Alaa S.; Saini, G.S.S. [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India)

    2012-06-15

    Highlights: ► nc-CdSe thin films are prepared by thermal vacuum evaporation technique. ► TEM analysis shows NCs are spherical in shape. ► XRD reveals the hexagonal (wurtzite) crystal structure of nc-CdSe thin films. ► The direct optical bandgap of nc-CdSe is 2.25 eV in contrast to bulk (1.7 eV). ► Dispersion of refractive index is discussed in terms of Wemple–DiDomenico single oscillator model. -- Abstract: The nanocrystalline thin films of CdSe are prepared by thermal evaporation technique at room temperature. These thin films are characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and photoluminescence spectroscopy (PL). The transmission spectra are recorded in the transmission range 400–3300 nm for nc-CdSe thin films. Transmittance measurements are used to calculate the refractive index (n) and absorption coefficient (α) using Swanepoel's method. The optical band gap (E{sub g}{sup opt}) has been determined from the absorption coefficient values using Tauc's procedure. The optical constants such as extinction coefficient (k), real (ε{sub 1}) and imaginary (ε{sub 2}) dielectric constants, dielectric loss (tan δ), optical conductivity (σ{sub opt}), Urbach energy (E{sub u}) and steepness parameter (σ) are also calculated for nc-CdSe thin films. The normal dispersion of refractive index is described using Wemple–DiDomenico single-oscillator model. Refractive index dispersion is further analysed to calculate lattice dielectric constant (ε{sub L}).

  11. Electronic coupling of colloidal CdSe nanocrystals monitored by thin-film positron-electron momentum density methods

    NARCIS (Netherlands)

    Eijt, S.W.H.; Mijnarends, P.E.; van Schaarenburg, L.C.; Houtepen, A.J.; Vanmaekelbergh, D.A.M.; Barbiellini, B.; Bansil, A.

    2009-01-01

    The effect of temperature controlled annealing on the confined valence electron states in CdSe nanocrystal arrays, deposited as thin films, was studied using two-dimensional angular correlation of annihilation radiation. A reduction in the intensity by 35% was observed in a feature of the positron a

  12. Synthesis, Structural and Optoelectronic Properties of Nanocrystalline CdSe Thin Films Prepared By Chemical Bath Deposition Route

    Directory of Open Access Journals (Sweden)

    C. P. Nikam

    2015-12-01

    Full Text Available Cadmium Selenide (CdSe thin films were deposited onto glass substrates by simple and low cost chemical bath deposition (CBD technique. Aqueous ammonia was used as a complexing agent for the synthesis of these films. Deposition parameters were optimised and the crystal structure and morphology of the films were characterized by x-ray diffraction (XRD and field emission scanning electron microscopy (FE-SEM, respectively. XRD pattern revealed that the as-prepared CdSe thin films are polycrystalline with hexagonal structure. The average crystallite size of CdSe thin film was found to be in the range of 12-16 nm. FE-SEM image revealed that deposited thin films were consisting of nanocrystalline grains, which were coalesced to form bigger grains that are in cluster form distributed over the substrate surface. Transmission spectra showed high transmittance in the visible region and direct optical band gap energy was found to be a function of deposition time.

  13. Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

    Science.gov (United States)

    Glenis, G. X.; Athanassopoulou, M. D.; Argyropoulos, Th G.; Dervos, C. T.

    2015-02-01

    Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I-V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm-2) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I-V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I-V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures.

  14. Growth technology, X-ray and optical properties of CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Esparza-Ponce, H.E. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); CIMAV, Miguel de Cervantes 120, Chihuahua 31109, Chih. (Mexico)], E-mail: hilda.esparza@cimav.edu.mx; Hernandez-Borja, J. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); Reyes-Rojas, A. [CIMAV, Miguel de Cervantes 120, Chihuahua 31109, Chih. (Mexico); Cervantes-Sanchez, M. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); Instituto Tecnologico de Morelia, Morelia 58120, Michoacan (Mexico); Vorobiev, Y.V.; Ramirez-Bon, R.; Perez-Robles, J.F. [CINVESTAV-IPN Unidad Queretaro, Queretaro 76230, Qro (Mexico); Gonzalez-Hernandez, J. [CIMAV, Miguel de Cervantes 120, Chihuahua 31109, Chih. (Mexico)

    2009-02-15

    An ammonia-free chemical-bath deposition was used to obtain CdSe thin films on glass substrate. The materials used in the chemical bath were cadmium chloride complexed with sodium citrate and sodium selenosulphate. The preparation conditions, especially the starting solution characteristics, such as concentration of dissolved materials, temperature, pH value as well as deposition time and immersion cycles were optimized to obtain homogeneous stoichiometric films with good adherence to the glass substrate. The films thickness was in the range of 400-500 nm with a growing time of 4 h. The material obtained was characterized by optical absorption, SEM with the energy dispersive X-ray analysis (EDS) and X-ray diffraction. The films obtained at bath temperatures of 70 and 80 deg. C had the hexagonal structure (of wurtzite type), with crystallite size of about 20 nm. Room temperature deposition results in films with the cubic structure and crystallite size of about 4 nm. From optical transmission data, an energy gap equal to 1.88 eV was found. The material is interesting for applications in hybrid systems for solar energy conversion.

  15. Thermally induced effects on structural and electrical properties of selenium-rich Cd-Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahfoz Kotb, H., E-mail: hmkscience@yahoo.co [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Dabban, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, F.M. [Physics Department, Faculty of Science, AL-Azhar University, Assiut (Egypt); Abdel-latif, A.Y.; Hafiz, M.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2011-03-15

    The effect of annealing in nitrogen atmosphere on structural and electrical properties of selenium rich CdSe (SR-CdSe) thin films deposited by thermal evaporation onto glass substrates were studied. X-ray diffraction (XRD) patterns showed that the as-prepared films were amorphous, whereas the annealed films were polycrystalline. Analyzing XRD patterns reveals the coexistence of both Se and CdSe crystalline phases which exhibits a hexagonal structure. The microstructure parameters (crystallite size, microstrain and dislocation density) were calculated for annealed films. Temperature dependence (300-500 K) of d.c. conductivity was studied for as-prepared and annealed thin films. The experimental results indicate that the electrical conduction taking place through thermally activated process. At higher temperatures, electrical conduction for as-prepared film is taking place in the extended states while localized states conduction in the band tails is most likely to take place for annealed films. Regarding the lower temperature range, conduction by hopping in the localized states near the Fermi level is found to be dominant. Thus, conductivity data in this range was analyzed using Mott's variable range hopping conduction, where Mott's parameters were calculated for SR-CdSe thin films.

  16. Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films

    OpenAIRE

    Rajesh Singh; Radha Srinivasan

    2016-01-01

    Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formatio...

  17. Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

    Science.gov (United States)

    Kumar, Vipin; Sharma, D. K.; Sharma, Kapil; Dwivedi, D. K.

    2016-11-01

    II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity.

  18. Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vipin; Sharma, D.K.; Sharma, Kapil [Krishna Institute of Engineering and Technology, Department of Physics, Ghaziabad (India); Dwivedi, D.K. [M.M.M University of Technology, Department of Physics, Gorakhpur (India)

    2016-11-15

    II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity. (orig.)

  19. Annealing temperature dependence of the optical and structural properties of selenium-rich CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kotb, H. Mahfoz, E-mail: hmkscience@yahoo.com [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Dabban, M.A.; Abdel-latif, A.Y.; Hafiz, M.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2012-01-25

    Highlights: Black-Right-Pointing-Pointer CdSe is a promising semiconductor material for optoelectronics and photovoltaic devices. Black-Right-Pointing-Pointer The stoichiometry of the films is expected to influence the electrical and optical properties of these films. Black-Right-Pointing-Pointer Selenium rich CdSe (SR-CdSe) thin films were deposited by thermal evaporation. Black-Right-Pointing-Pointer We study the effect of annealing on the structural and optical properties of SR-CdSe thin films. - Abstract: Structural and optical properties of selenium-rich CdSe (SR-CdSe) thin films prepared by thermal evaporation are studied as a function of annealing temperature. X-ray diffraction (XRD) patterns show that the as-prepared films were amorphous, whereas the annealed films are polycrystalline. Analyzing XRD patterns of the annealed films reveal the coexistence of both (hexagonal) Se and (hexagonal) CdSe crystalline phases. Surface roughness of SR-CdSe films is measured using atomic force microscope (AFM). Analyses of the absorption spectra in the wavelength range (200-2500 nm) of SR-CdSe thin films indicates the existence of direct and indirect optical transition mechanisms. The optical band gap (E{sub g}) of as-prepared film is 1.92 and 2.14 eV for the indirect allowed and direct allowed transitions respectively. After annealing, the absorption coefficient and optical band gap were found to decrease, while the values of refractive index (n) and the extinction coefficient (k{sub ex}) increase. The dispersion of the refractive index is described using the Wimple-Di Domenico (WDD) single oscillator model and the dispersion parameters are calculated as a function of annealing temperature. Besides, the high frequency dielectric constant ({epsilon}{sub {infinity}}) and the ratios of the free carrier concentration to its effective mass (N/m*) are studied as a function of annealing temperature. The results are discussed and correlated in terms of amorphous

  20. Effects of indium doping on the structural and optical properties of CdSe thin films deposited by chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Perez G, A. M.; Arreola, I. V. [Universidad Popular Autonoma del Estado de Puebla, 21 Sur No. 1103, Col Santiago, 72160 Puebla, Pue. (Mexico); Tepantlan, C. S. [Universidad Politecnica de Tulancingo, Calle Ingenierias 100 Huapalcalco, 43629 Tulancingo, Hidalgo (Mexico)]. e-mail: arllenemariana.perez@upaep.mx

    2009-07-01

    Thin films of n-type CdSe have been grown on Corning glass substrate by chemical bath deposition, prepared with Sodium Seleno-Sulphate (Na{sub 2}SSeO{sub 3}), Cadmium Chloride (CdCl{sub 2}) and Indium Tri-Chloride (InCl{sub 3}), mixed in an aqueous environment. The effects of different In doping concentrations have been investigated. X-ray diffraction spectra show that at low In concentration only the CdSe lattice is present in the deposited film, whereas CdIn{sub 2}Se{sub 4} and InSe compounds are obtained at higher In concentrations. Optical properties have been calculated from transmission spectra and photoluminescence measurements. From transmission spectra, the absorption coefficient and optical gap were obtained; photoluminescence spectra show band-band recombination from 10 K to room temperature. (Author)

  1. Investigation of light induced effect on density of states of Pb doped CdSe thin films

    Science.gov (United States)

    Kaur, Jagdish; Singh, Baljinder; Tripathi, S. K.

    2016-05-01

    Thin films of Pb doped CdSe are deposited on the glass substrates by thermal evaporation technique using inert gas condensation method. The prepared thin films are light soaked under vacuum of 2×10-3 mbar for two hour. The absorption coefficient in the sub-band gap region has been studied using Constant Photocurrent Method (CPM). The absorption coefficient in the sub-band gap region follows an exponential Urbach tail. The value of Urbach energy and number density of defect states have been calculated from the absorption coefficient in the sub-band gap region and found to increase after light soaking treatment. The energy distribution of the occupied density of states below Fermi level has been evaluated using derivative procedure of the absorption coefficient.

  2. Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films

    Directory of Open Access Journals (Sweden)

    Rajesh Singh

    2016-06-01

    Full Text Available Cadmium Selinide (CdSe thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD. The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence.

  3. The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

    Science.gov (United States)

    Akaltun, Yunus; Yıldırım, M. Ali; Ateş, Aytunç; Yıldırım, Muhammet

    2011-05-01

    CdSe thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological, optical and electrical properties of CdSe thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature with hexagonal structure and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The optical absorption studies revealed that the films are found to be a direct allowed transition. The energy bandgap values were changed from 1.93 to 1.87 eV depending on the film thickness. The electron effective mass (m e*/m o), refractive index ( n), optical static and high frequency dielectric constant (ɛ o, ɛ ∞) values were calculated by using the energy bandgap values as a function of the film thickness. The resistivity of the films changed between 10 6 and 10 2 Ω-cm with increasing film thickness at room temperature.

  4. Annealing-induced optical and sub-band-gap absorption parameters of Sn-doped CdSe thin films

    Science.gov (United States)

    Kaur, Jagdish; Tripathi, S. K.

    2016-01-01

    Thin films of Sn-doped CdSe were prepared by thermal evaporation onto glass substrates in an argon gas atmosphere and annealed at different temperatures. Structural evaluation of the films was carried out using X-ray diffraction and their stoichiometry studied by energy-dispersive X-ray analysis. The films exhibit a preferred orientation along the hexagonal direction of CdSe. The optical transmittance of the films shows a red shift of the absorption edge with annealing. The fundamental absorption edge corresponds to a direct energy gap with a temperature coefficient of 3.34 × 10-3 eV K-1. The refractive index, optical conductivity and real and imaginary parts of the dielectric constants were found to increase after annealing. The sub-band gap absorption coefficient was evaluated using the constant photocurrent method. It varies exponentially with photon energy. The Urbach energy, the density of defect states, and the steepness of the density of localized states were evaluated from the sub-band-gap absorption.

  5. Electrochemical Synthesis of CdSe Quantum Dot Array on Graphene Basal Plane using Mesoporous Silica Thin Film Templates

    OpenAIRE

    Kim, Yong-Tae; Han, Jung Hee; Hong, Byung Hee; Kwon, Young-Uk

    2010-01-01

    We report on the synthesis of CdSe quantum dots on a graphene surface by an electrochemical deposition method. By using a mesoporous silica film formed on the graphene surface as a template and a potential equalizer between the edge/defect sites and the basal plane of the graphene, CdSe quantum dots can be grown on the basal plane into a regular hexagonal array.

  6. In situ observation of electron-beam-induced dewetting of CdSe thin film embedded in SiO2

    DEFF Research Database (Denmark)

    Fabrim, Zacarias Eduardo; Kjelstrup-Hansen, Jakob; Fichtner, Paulo F. P.

    In this work we show the dewetting process of the CdSe thin films induced by electron beam irradiation. A multilayer heterostructure of SiO2/CdSe/SiO2 was made by a magnetron sputtering process. A plan-view (PV) sample was irradiated with 200 kV electrons in the TEM with two current densities: 0.......33 A.cm2 and 1.0 A.cm2 and at 80 kV with 0.37 A.cm2. The dewetting of the CdSe film is inferred by a number of micrographs taken during the irradiation. The microstructural changes were analyzed under the assumption of being induced by ballistic collision effects in the absence of sample heating....

  7. A dry method to synthesize dendritic Ag2Se nanostructures utilizing CdSe quantum dots and Ag thin films

    Science.gov (United States)

    Hu, Lian; Zhang, Bingpo; Xu, Tianning; Li, Ruifeng; Wu, Huizhen

    2015-01-01

    Dendritic Ag2Se nanostructures are synthesized in a dry environment by UV irradiating the hybrids composed of CdSe quantum dots (QDs) and silver (Ag). UV irradiation on CdSe QDs induces a photooxidation effect on the QD surface and leads to the formation of SeO2 components. Then SeO2 reacts with the Ag atoms in either Ag film or QD layer to produce the Ag2Se. The growth mechanism of Ag2Se dendrites on solid Ag films is explored and explained by a diffusion limited aggregation model in which the QD layer provides enough freedom for Ag2Se motion. Since the oxidation of the CdSe QDs is the critical step for the Ag2Se dendrites formation this dry chemical interaction between QDs and Ag film can be applied in the study of the QD surface chemical properties. With this dry synthesis method, the Ag2Se dendrites can also be facilely formed at the designed area on Ag substrates.

  8. A Comparative Study on the Optical Properties of Multilayer CdSe / CdTe Thin Film with Single Layer CdTe and CdSe Films

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2013-07-01

    Full Text Available CdTe and CdSe single layer thin films and CdSe / CdTe multilayer (ML thin film were prepared by using physical vapour deposition method. Optical properties of CdSe / CdTe multilayer thin film shows different behavior due to type II band structure alignment. Energy band gap value of CdSe / CdTe ML thin film is shifted to higher value than that of single layer CdTe film. This is due to decrease in crystallite size to dimension smaller than the Bohr exciton radius of CdTe (14 nm. Crystallite size of the multilayer sample was calculated with the predictions of the effective mass approximation model (i.e., Brus model. It is observed that the photoluminescence peak of CdSe / CdTe ML thin film is red shifted compared to the peaks corresponding to individual CdSe and CdTe thin films. This may be due to the presence of type II quantum dot formation in the CdSe / CdTe heterostructure multilayer thin film.

  9. Photovoltaic conversion in TiO{sub 2} coatings sensitized with chemical deposited CdSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rincon, M. E; Orihuela, A; Vazquez, G [Centro de Investigacion en Energia, UNAM, Temixco, Morelos (Mexico)

    2000-07-01

    We have investigated the photovoltaic conversion of spray painted titanium dioxide coatings sensitized with chemically deposited cadmium selenide thin films. The optical and photoelectrochemical characterization of the composite films indicate the importance of thermal treatments in improving the annealed cadmium selenide films, the sensitized films based on spray-painted TiO{sub 2} show stronger photocurrents and have a red shifted spectral response. This behavior, along with is good photostability, might broaden the field of applications of the sensitized films, which can be used the trigger water oxidation and reduction reactions in photocatalytic waste treatment. [Spanish] Hemos investigado la conversion fotovoltaica de recubrimientos aplicados por dispersion de dioxido de titanio sensibilizado con peliculas delgadas de selenurio de cadmio depositado quimicamente. La caracterizacion optica y fotoquimica de las peliculas compuestas indican la importancia de tratamientos termicos para mejorar las peliculas de seleniuro de calcio destemplado, las peliculas sensibilizadas basadas en la pintura aplicada con dispersores de TiO{sub 2} muestran fotocorrientes mas elevadas y tienen una respuesta espectral desplazada hacia el rojo. Este comportamiento, juntamente con una buena fotoestabilidad puede ampliar el campo de aplicaciones de peliculas sensibilizadas que pueden usarse para disparar las reacciones de oxidacion y reduccion en el tratamiento del tratamiento fotocatalitico de desperdicio.

  10. Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

    Science.gov (United States)

    Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

    2014-09-02

    The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

  11. Photo-Corrosion of CdSe Film Electrode by Electrochemical Modulation Reflectance Spectrum

    Institute of Scientific and Technical Information of China (English)

    单忠强; 田建华; 刘义平; 田文娟

    2004-01-01

    The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline (PAN) film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum (EMRS). EMRS of both CdSe and PAN/CdSe electrodes in K4Fe(CN)6/K3Fe(CN)6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.

  12. Structural and electrical properties of annealed CdSe films on Ni substrate

    Energy Technology Data Exchange (ETDEWEB)

    Athanassopoulou, M.D.; Mergos, J.A.; Palaiologopoulou, M.D.; Argyropoulos, Th.G.; Dervos, C.T., E-mail: cdervos@central.ntua.gr

    2012-08-31

    Preparation and characterization of CdSe thin film semiconductors, prepared by cathodic electrodeposition from an acid sulphate solution (CdSO{sub 4}-SeO{sub 2}) before and after thermal treatment in nitrogen atmosphere, were investigated. The effect of the bath temperature and how it affects the cadmium selenide (CdSe) deposits were studied. The formation of compact barrier layers of zinc blende CdSe was attained. Scanning electron microscopy and X-ray diffraction patterns present a remarkably intense cubic structure, even after thermal treatment. The Ni/CdSe/Au structure may exhibit rectifying properties depending on the temperature during the electrodeposition. Thermal annealing in nitrogen gas increases the conductivity of CdSe and intensifies the rectification properties of the Ni/CdSe/Au structure. - Highlights: Black-Right-Pointing-Pointer High quality (111) CdSe films by electrolytic deposition on Ni substrates. Black-Right-Pointing-Pointer Investigation of optimum film growth parameters during the electrodeposition. Black-Right-Pointing-Pointer Electrical characterization and rectification properties of Ni/CdSe/Au structures. Black-Right-Pointing-Pointer Thermal annealing in nitrogen gas, to investigate changes induced on deposits. Black-Right-Pointing-Pointer Conductivity of CdSe and potential barriers are controlled by annealing.

  13. A CdSe thin film: a versatile buffer layer for improving the performance of TiO2 nanorod array:PbS quantum dot solar cells

    Science.gov (United States)

    Tan, Furui; Wang, Zhijie; Qu, Shengchun; Cao, Dawei; Liu, Kong; Jiang, Qiwei; Yang, Ying; Pang, Shan; Zhang, Weifeng; Lei, Yong; Wang, Zhanguo

    2016-05-01

    To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady-state analyses as well as ultra-fast photoluminescence and photovoltage decays. Thus this paper provides a good buffer layer to the community of quantum dot solar cells.To fully utilize the multiple exciton generation effects in quantum dots and improve the overall efficiency of the corresponding photovoltaic devices, nanostructuralizing the electron conducting layer turns out to be a feasible strategy. Herein, PbS quantum dot solar cells were fabricated on the basis of morphologically optimized TiO2 nanorod arrays. By inserting a thin layer of CdSe quantum dots into the interface of TiO2 and PbS, a dramatic enhancement in the power conversion efficiency from 4.2% to 5.2% was realized and the resulting efficiency is one of the highest values for quantum dot solar cells based on nanostructuralized buffer layers. The constructed double heterojunction with a cascade type-II energy level alignment is beneficial for promoting photogenerated charge separation and reducing charge recombination, thereby responsible for the performance improvement, as revealed by steady

  14. Optical properties of Cd Se thin films obtained by pyrolytic dew; Propiedades opticas de peliculas delgadas de CdSe obtenidas por rocio pirolitico

    Energy Technology Data Exchange (ETDEWEB)

    Perez G, A.M. [UPAEP, 72160 Puebla (Mexico); Tepantlan, C.S. [UPT, 43626 Tulancingo, Hidalgo (Mexico); Renero C, F. [INAOE, 72840 Puebla (Mexico)

    2006-07-01

    In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na{sub 2}SSeO{sub 3}) and Cadmium Chloride (CdC{sub 12}) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

  15. Direct spectroscopic evidence of ultrafast electron transfer from a low band gap polymer to CdSe quantum dots in hybrid photovoltaic thin films.

    Science.gov (United States)

    Couderc, Elsa; Greaney, Matthew J; Brutchey, Richard L; Bradforth, Stephen E

    2013-12-11

    Ultrafast transient absorption spectroscopy is used to study charge transfer dynamics in hybrid films composed of the low band gap polymer PCPDTBT and CdSe quantum dots capped with tert-butylthiol ligands. By selectively exciting the polymer, a spectral signature for electrons on the quantum dots appears on ultrafast time scales (≲ 65 fs), which indicates ultrafast electron transfer. From this time scale, the coupling between the polymer chains and the quantum dots is estimated to be J ≳ 17 meV. The reduced quantum dot acceptors exhibit an unambiguous spectral bleach signature, whose amplitude allows for the first direct calculation of the absolute electron transfer yield in a hybrid solar cell (82 ± 5%). We also show that a limitation of the hybrid system is rapid and measurable geminate recombination due to the small separation of the initial charge pair. The fast recombination is consistent with the internal quantum efficiency of the corresponding solar cell. We therefore have identified and quantified a main loss mechanism in this type of third generation solar cell.

  16. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  17. Mapping the 3D distribution of CdSe nanocrystals in highly oriented and nanostructured hybrid P3HT-CdSe films grown by directional epitaxial crystallization.

    Science.gov (United States)

    Roiban, L; Hartmann, L; Fiore, A; Djurado, D; Chandezon, F; Reiss, P; Legrand, J-F; Doyle, S; Brinkmann, M; Ersen, O

    2012-11-21

    Highly oriented and nanostructured hybrid thin films made of regioregular poly(3-hexylthiophene) and colloidal CdSe nanocrystals are prepared by a zone melting method using epitaxial growth on 1,3,5-trichlorobenzene oriented crystals. The structure of the films has been analyzed by X-ray diffraction using synchrotron radiation, electron diffraction and 3D electron tomography to afford a multi-scale structural and morphological description of the highly structured hybrid films. A quantitative analysis of the reconstructed volumes based on electron tomography is used to establish a 3D map of the distribution of the CdSe nanocrystals in the bulk of the films. In particular, the influence of the P3HT-CdSe ratio on the 3D structure of the hybrid layers has been analyzed. In all cases, a bi-layer structure was observed. It is made of a first layer of pure oriented semi-crystalline P3HT grown epitaxially on the TCB substrate and a second P3HT layer containing CdSe nanocrystals uniformly distributed in the amorphous interlamellar zones of the polymer. The thickness of the P3HT layer containing CdSe nanoparticles increases gradually with increasing content of NCs in the films. A growth model is proposed to explain this original transversal organization of CdSe NCs in the oriented matrix of P3HT.

  18. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  19. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  20. Directed energy transfer in films of CdSe quantum dots: beyond the point dipole approximation.

    Science.gov (United States)

    Zheng, Kaibo; Žídek, Karel; Abdellah, Mohamed; Zhu, Nan; Chábera, Pavel; Lenngren, Nils; Chi, Qijin; Pullerits, Tõnu

    2014-04-30

    Understanding of Förster resonance energy transfer (FRET) in thin films composed of quantum dots (QDs) is of fundamental and technological significance in optimal design of QD based optoelectronic devices. The separation between QDs in the densely packed films is usually smaller than the size of QDs, so that the simple point-dipole approximation, widely used in the conventional approach, can no longer offer quantitative description of the FRET dynamics in such systems. Here, we report the investigations of the FRET dynamics in densely packed films composed of multisized CdSe QDs using ultrafast transient absorption spectroscopy and theoretical modeling. Pairwise interdot transfer time was determined in the range of 1.5 to 2 ns by spectral analyses which enable separation of the FRET contribution from intrinsic exciton decay. A rational model is suggested by taking into account the distribution of the electronic transition densities in the dots and using the film morphology revealed by AFM images. The FRET dynamics predicted by the model are in good quantitative agreement with experimental observations without adjustable parameters. Finally, we use our theoretical model to calculate dynamics of directed energy transfer in ordered multilayer QD films, which we also observe experimentally. The Monte Carlo simulations reveal that three ideal QD monolayers can provide exciton funneling efficiency above 80% from the most distant layer. Thereby, utilization of directed energy transfer can significantly improve light harvesting efficiency of QD devices.

  1. Surface states and photovoltaic effects in CdSe quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Kronik, L.; Ashkenasy, N.; Leibovitch, M.; Fefer, E.; Shapira, Y. [Tel-Aviv Univ., Ramat-Aviv (Israel). Dept. of Electrical Engineering-Physical Electronics; Gorer, S.; Hodes, G. [Weizmann Inst. of Science, Rehovoth (Israel). Dept. of Materials and Interfaces

    1998-05-01

    Photovoltaic effects in CdSe quantum dot (QD) films have been studied using surface photovoltage spectroscopy and complementary methods. The results show that, contrary to previous studies, nonnegligible electric fields can exist in QD films. As a result, driftlike currents must be considered, in addition to the well-known diffusion like currents. However, it is found that the specific case of photovoltage sign reversal, observed after etching highly quantized CdSe QD films, is governed by diffusion like transport. The latter is highly influenced by preferential trapping of one type of charge carrier. The preferential trapping is shown to be surface localized and is strongly ambient dependent. It is shown that the photovoltaic properties of these CdSe QD films are dominated by their surface state distribution.

  2. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  3. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  4. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  5. Film formation of CdSe quantum dot embedded phosphate glass on an FTO glass substrate

    Science.gov (United States)

    Han, Karam; Kim, Yoon Hwa; Im, Won Bin; Chung, Woon Jin

    2015-07-01

    A thick film with CdSe quantum dot (QD) embedded glass was formed on a fluorine-doped tin oxide (FTO) glass substrate. Phosphate glasses with different CdO and ZnSe concentrations were synthesized, and the heat treatment conditions were varied to determine the appropriate QD and film formation conditions. Phosphate glass with 1 mol. % CdO and 1.5 mol. % ZnSe showed controlled crystallization of CdSe QDs when they were heat treated at 550℃ for 1 hr. Absorption spectra and Raman spectroscopy identified the QD formation. Precursor glass was ground into powder and pasted onto FTO only and TiO2/FTO glass substrates via the screen printing method. Glass film embedded with QDs was successfully formed after sintering, thus demonstrating its potential for film applications. [Figure not available: see fulltext.

  6. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  7. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  8. Air annealing induced transformation of cubic CdSe microspheres into hexagonal nanorods and micro-pyramids

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, Institute of Science, Mumbai 400032, M.S. (India); Lu, Shih-Yuan, E-mail: sylu@mx.nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu 30013, Taiwan (China)

    2015-08-15

    Highlights: • Nanocrystalline CdSe thin films were deposited using inexpensive CBD method. • Air annealing induced structural and interesting morphological transformation. • The as-deposited CdSe thin films showed a blue shift in its optical spectra. • The films showed a red shift in their optical spectra after annealing. - Abstract: CdSe thin films have been deposited onto glass substrates using a chemical bath deposition method at relatively low temperatures (40 °C). The precursors used for the deposition of the thin films are cadmium nitrate hexahydrate, freshly prepared sodium selenosulfate solution and aqueous ammonia solution as a complex as well as pH adjusting reagent. In order to study the influence of air annealing on their physicochemical properties, the as-deposited CdSe thin films were further annealed at 200 °C and 400 °C for 3 h in air atmosphere. Significant changes in the morphology and photonic properties were clearly observed after the thermal annealing of the CdSe thin films. The as-deposited CdSe films grow with the cubic phase that transforms into mixed cubic and hexagonal wurtzite phase with improved crystalline quality of the films after the air annealing. Morphological observation reveals that the as-deposited thin films grow with multilayer that consists of network or mesh like structure, uniformly deposited on the glass substrate over which microspheres are uniformly distributed. After air annealing, CdSe nanorods emerged from the microspheres along with conversion of few microspheres into micro-pyramids. The UV–visible study illustrates that the as-deposited thin film shows blue shifts in its optical spectrum and the spectrum was red-shifted after annealing the CdSe thin films. The band gap of the CdSe thin films were found to be decreased after the thermal treatment.

  9. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  10. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  11. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  12. Amphoteric CdSe nanocrystalline quantum dots.

    Science.gov (United States)

    Islam, Mohammad A

    2008-06-25

    The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.

  13. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  14. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  15. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  16. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  17. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  18. How Does a SILAR CdSe Film Grow? Tuning the Deposition Steps to Suppress Interfacial Charge Recombination in Solar Cells.

    Science.gov (United States)

    Becker, Matthew A; Radich, James G; Bunker, Bruce A; Kamat, Prashant V

    2014-05-01

    Successive ionic layer adsorption and reaction (SILAR) is a popular method of depositing the metal chalcogenide semiconductor layer on the mesoscopic metal oxide films for designing quantum-dot-sensitized solar cells (QDSSCs) or extremely thin absorber (ETA) solar cells. While this deposition method exhibits higher loading of the light-absorbing semiconductor layer than direct adsorption of presynthesized colloidal quantum dots, the chemical identity of these nanostructures and the evolution of interfacial structure are poorly understood. We have now analyzed step-by-step SILAR deposition of CdSe films on mesoscopic TiO2 nanoparticle films using X-ray absorption near-edge structure analysis and probed the interfacial structure of these films. The film characteristics interestingly show dependence on the order in which the Cd and Se are deposited, and the CdSe-TiO2 interface is affected only during the first few cycles of deposition. Development of a SeO2 passivation layer in the SILAR-prepared films to form a TiO2/SeO2/CdSe junction facilitates an increase in photocurrents and power conversion efficiencies of quantum dot solar cells when these films are integrated as photoanodes in a photoelectrochemical solar cell.

  19. Electric Field Effects on Photoluminescence of CdSe Nanoparticles in a PMMA Film

    Directory of Open Access Journals (Sweden)

    Takakazu Nakabayashi

    2014-06-01

    Full Text Available External electric field effects on spectra and decay of photoluminescence (PL as well as on absorption spectra were measured for CdSe nanoparticles in a poly(methyl methacrylate (PMMA film. Electrophotoluminescence (E-PL spectra as well as electroabsorption spectra show a remarkable Stark shift which depends on the particle size, indicating a large electric dipole moment in the first exciton state. The E-PL spectra also show that PL of CdSe is quenched by application of electric fields, and the magnitude of the field-induced quenching becomes larger with increasing size. The PL decay profiles observed in the absence and presence of electric field show that the field-induced quenching of PL mainly originates from the field-induced decrease in population of the emitting state prepared through the relaxation from the photoexcited state.

  20. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  1. Dual-Gate Thin-Film Transistors, Integrated Circuits and Sensors

    NARCIS (Netherlands)

    Spijkman, Mark-Jan; Myny, Kris; Smits, Edsger C. P.; Heremans, Paul; Blom, Paul W. M.; de Leeuw, Dago M.

    2011-01-01

    The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the f

  2. Dual-gate thin-film transistors, integrated circuits and sensors

    NARCIS (Netherlands)

    Spijkman, M.-J.; Myny, K.; Smits, E.C.P.; Heremans, P.; Blom, P.W.M.; Leeuw, D.M. de

    2011-01-01

    The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the f

  3. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  4. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  5. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  6. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  7. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  8. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  9. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  10. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  11. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  12. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  13. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  14. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  15. Studies on electrochemically grown Cd-Fe-Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahalingam, T. [Alagappa Univ., Karaikudi (India). Dept. of Physics; Ajou Univ., Suwon (Korea, Republic of). Dept. of Electrical and Computer Engineering; Thanikaikarasan, S.; Raja, M.; Sanjeeviraja, C. [Alagappa Univ., Karaikudi (India). Dept. of Physics; Lee, S.; Moon, H.; Kim, Y.D. [Ajou Univ., Suwon (Korea, Republic of). Dept. of Molecular Science and Technology; Sebastian, P.J. [CIE-UNAM, Temixco, Morelos (Mexico); Chipas Polytechnical Univ., Chipas (Mexico)

    2007-01-15

    This paper presented the results of a study that investigated the electrochemical, structural, compositional, morphological and photoelectrochemical properties of cadmium ferrous selenide (Cd-Fe-Se) semiconducting thin films electrodeposited onto conducted tin oxide (SnO{sub 2}) coated glass substrates at various cadmium sulfate concentrations in the deposition bath. Experimental details were provided along with results of typical cyclic voltammograms of Cd-Fe-Se thin film cathodically deposited from an acid solution containing CdSO{sub 4}, FeSO{sub 4} and SeO{sub 2} without any additives. Variations in film thickness were determined along with compositional analysis and morphological studies. Photoelectrochemical (PEC) solar cell studies were performed in a cell consisting of photoelectrode (Cd-Fe{sub S}e), a platinum counter electrode and a saturated dalomel reference electrode. A hot probe method identified the nature of the thin film to be n-type, while the structure was found to be hexagon for CdSe, tetragonal for {alpha}-FeSe and orthorhombic for FeSe{sub 2}. According to energy dispersive analysis of X-rays (EDAX), the stoichiometric values of Cd and Se are obtained at higher concentration of CdSO{sub 4}. The maximum concentration of CD{sup 2+} ions in the solution bath yielded thin films with smooth surfaces. 18 refs., 1 tab., 6 figs.

  16. Quantum Confinement in Cadmium Selenide Multilayer Thin Films Using Physical Vapour Deposition Method

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2012-06-01

    Full Text Available Nanocrystals of CdSe have been produced in SiOx matrix layer and in ZnSe heterostructure layer by thermal evaporation method. Structural studies were done by X-ray diffractometer. Quantum confinement effect of CdSe nanocrystals was analyzed from optical studies. Bulk CdSe has band-gap energy of 1.756 eV that can be shifted to larger values by reducing the crystal size to dimensions smaller than the Bohr radius of the exciton. Experimentally measured band-gap shifts with respect to the bulk value for quantum dot thin films are compared with the predictions of the effective mass approximation model (i.e., Brus model and Quantum mechanical model. Sizes of the crystallites calculated from both models were coincident with each other.

  17. CdSe nanocrystal sensitized anatase TiO2 (001) tetragonal nanosheet-array films for photovoltaic application.

    Science.gov (United States)

    Feng, Shuanglong; Yang, Junyou; Liu, Ming; Liu, Yong

    2013-02-01

    CdSe nanocrystal sensitized TiO2 nanosheet array heterostructure films were fabricated by a two-step method. Firstly, a single crystalline anatase TiO2 tetragonal nanosheet-array film on a transparent conductive fluorine-doped tin oxide (FTO) substrate was successfully prepared by hydrothermal method. Then, CdSe nanocrystalline sensitizers were deposited on the TiO2 nanosheet array by CBD method. The products were characterized with XRD, SEM, TEM and UV-vis absorption spectroscopy. The effect of the CdSe nanocrystal deposition time and the length of the TiO2 sheet on the photovoltaic performance of the resulting CdSe/TiO2 nanosheet array electrodes were also investigated. In comparison with the non-sensitized TiO2 nanosheet array, the photocurrent of CdSe sensitized TiO2 nanosheet has a great enhancement, which gives some insight to the fundamental mechanism of the performance improvement.

  18. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  19. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  20. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  1. Preparation, characterization and application of polyelectrolytes/TiO{sub 2}/CdSe self-assembled films

    Energy Technology Data Exchange (ETDEWEB)

    Faria, Ana Claudia R. [Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul – UCS, Rua Francisco Getúlio Vargas, 1130, Caxias do Sul 95070-560, RS (Brazil); Menezes, Frederico D.; Milani, Raquel [Universidade Federal de Pernambuco – UFPE, Av. Prof. Moraes Rego, 1235, Recife 50740-560, PE (Brazil); Pereira, Marcelo B.; Gonçalves, Renato V.; Horowitz, Flavio [Instituto de Física, Universidade Federal do Rio Grande do Sul – UFRGS, Av. Bento Gonçalves, 9500, Porto Alegre 91501-970, RS (Brazil); Giovanela, Marcelo [Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul – UCS, Rua Francisco Getúlio Vargas, 1130, Caxias do Sul 95070-560, RS (Brazil); Machado, Giovanna [Universidade Federal de Pernambuco – UFPE, Av. Prof. Moraes Rego, 1235, Recife 50740-560, PE (Brazil); Centro de Tecnologias Estratégicas do Nordeste – CETENE, Av. Prof. Luiz Freire, 01, Recife 50740-540, PE (Brazil); Crespo, Janaina S., E-mail: jscrespo@ucs.br [Centro de Ciências Exatas e Tecnologia, Universidade de Caxias do Sul – UCS, Rua Francisco Getúlio Vargas, 1130, Caxias do Sul 95070-560, RS (Brazil)

    2014-01-31

    The aim of this work was to prepare self-assembled films (SAF) via a layer-by-layer technique and to characterize the films by applying several instrumental techniques. The cationic system was composed of the organic polyelectrolyte poly(diallyldimethylammonium chloride) and the inorganic semiconductor cadmium selenide (CdSe), whereas the anionic system was composed of poly(acrylic acid) and nanoparticles of the photoactive semiconductor titanium dioxide (TiO{sub 2}). Through measurements of the diffuse reflectance spectrum, absorption bands were observed in the near ultraviolet region for TiO{sub 2} and in the visible region for CdSe. The thicknesses of the SAF were determined through profilometry and scanning electron microscopy techniques, and the obtained values were on the order of microns. Finally, the SAF were irradiated with a Xe/Hg lamp, and the results indicated their potential for solar hydrogen production. - Highlights: • Development of polyelectrolytes/TiO{sub 2}/CdSe self-assembled filmsFilms characterization applying several instrumental techniques • Potential application in the solar hydrogen production.

  2. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  3. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  4. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  5. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  6. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  8. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  9. Photoluminescence and structural properties of CdSe quantum dot–gelatin composite films

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Kladko, V. [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevskaya, A. [L. Pysarzhevsky Institute of Physical Chemistry of NAS of Ukraine, Pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T. [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2014-11-15

    Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140–160 °C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100–160 °C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100–160 °C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 °C can be used for enhancement of the QD-related PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface.

  10. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  11. Assembly of CdSe onto mesoporous TiO{sub 2} films induced by a self-assembled monolayer for quantum dot-sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Lai-Wan; Chien, Huei-Ting; Lee, Yuh-Lang [Department of Chemical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 70101 (China)

    2010-08-01

    A self-assembled monolayer (SAM) of 3-mercaptopropyl-trimethyoxysilane (MPTMS) is pre-assembled onto a mesoporous TiO{sub 2} film and is used as a surface-modified layer to induce the growth of CdSe QDs in the successive ionic layer adsorption and reaction (SILAR) process. Due to the specific interaction of the terminal thiol groups to CdSe, the MPTMS SAM is found to increase the nucleation and growth rates of CdSe in the SILAR process, leading to a well covering and higher uniform CdSe layer which has a superior ability, compared with the electrode without MPTMS, in inhibiting the charge recombination at the electrode/electrolyte interface. Furthermore, the performance of the CdSe-sensitized TiO{sub 2} electrode can further be improved by an additional heat annealing after film deposition, attributable to a better interfacial connection between CdSe and TiO{sub 2}, as well as a better connection among CdSe QDs. The CdSe-sensitized solar cell prepared by the present strategy can achieve an energy conversion efficiency of 2.65% under the illumination of one sun (AM 1.5, 100 mW cm{sup -2}). (author)

  12. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  13. Optical Waveguide Lightmode Spectroscopy (OWLS as a Sensor for Thin Film and Quantum Dot Corrosion

    Directory of Open Access Journals (Sweden)

    Jinke Tang

    2012-12-01

    Full Text Available Optical waveguide lightmode spectroscopy (OWLS is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs intended for solar energy applications. In addition to changes in data treatment and experimental procedure, oxide- or QD-coated waveguide sensors must be synthesized. We synthesized zinc stannate (Zn2SnO4 coated (Si,TiO2 waveguide sensors, and used OWLS to monitor the relative mass of the film over time. Films lost mass over time, though at different rates due to variation in fluid flow and its physical effect on removal of film material. The Pulsed Laser Deposition (PLD technique was used to deposit CdSe QD coatings on waveguides. Sensors exposed to pH 2 solution lost mass over time in an expected, roughly exponential manner. Sensors at pH 10, in contrast, were stable over time. Results were confirmed with atomic force microscopy imaging. Limiting factors in the use of OWLS in this manner include limitations on the annealing temperature that maybe used to synthesize the oxide film, and limitations on the thickness of the film to be studied. Nevertheless, the technique overcomes a number of difficulties in monitoring the quality of thin films in-situ in liquid environments.

  14. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  15. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  16. Physical Investigation of Au8+ Ions Irradiated CdSe/FTO Thin Films

    Directory of Open Access Journals (Sweden)

    Yuvraj G. Gudage

    2010-06-01

    Full Text Available Thin films of cadmium selenide (CdSe have been electrodeposited on Fluorine doped tin oxide (FTO coated glass substrate in an electrolyte containing Cd(CH3COO2.2H2O and SeO2 at pH 2.7 and temperature 300 K. The as-deposited films were irradiated using Au8+ ions with energy of 100 MeV at fluencies of 1 x 1011 and 1 x 1012 ions/cm2 using tandem pelletron accelerator. The irradiation-induced modifications in CdSe thin films were studied using structural, optical and electrical X-ray diffraction (XRD, scanning electron microscopy (SEM, optical band gap, and I-V characteristics. XRD analysis revealed that the as-deposited films were polycrystalline in nature with cubic phase. After irradiating the films with Au8+ ions metastable cubic phase transformed into stable polycrystalline hexagonal phase. An enhancement in grain size, decrease in band gap energy and decrease in resistivity of the film after irradiation was seen from SEM micrographs, optical analysis, and I-V characteristics, respectively.

  17. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  18. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  19. Use of Surface Photovoltage Spectroscopy to Measure Built-in Voltage, Space Charge Layer Width, and Effective Band Gap in CdSe Quantum Dot Films.

    Science.gov (United States)

    Zhao, Jing; Nail, Benjamin A; Holmes, Michael A; Osterloh, Frank E

    2016-09-01

    Surface photovoltage spectroscopy (SPS) was used to study the photochemistry of mercaptoethanol-ligated CdSe quantum dot (2.0-4.2 nm diameter) films on indium doped tin oxide (ITO) in the absence of an external bias or electrolyte. The n-type films generate negative voltages under super band gap illumination (0.1-0.5 mW cm(-2)) by majority carrier injection into the ITO substrate. The photovoltage onset energies track the optical band gaps of the samples and are assigned as effective band gaps of the films. The photovoltage values (-125 to -750 mV) vary with quantum dot sizes and are modulated by the built-in potential of the CdSe-ITO Schottky type contacts. Deviations from the ideal Schottky model are attributed to Fermi level pinning in states approximately 1.1 V negative of the ITO conduction band edge. Positive photovoltage signals of +80 to +125 mV in films of >4.0 nm nanocrystals and in thin (70 nm) nanocrystal films are attributed to electron-hole (polaron) pairs that are polarized by a space charge layer at the CdSe-ITO boundary. The space charge layer is 70-150 nm wide, based on thickness-dependent photovoltage measurements. The ability of SPS to directly measure built-in voltages, space charge layer thickness, sub-band gap states, and effective band gaps in drop-cast quantum dot films aids the understanding of photochemical charge transport in quantum dot solar cells.

  20. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  1. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  2. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  3. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.

    1998-01-01

    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  4. Directed Energy Transfer in Films of CdSe Quantum Dots: Beyond the Point Dipole Approximation

    DEFF Research Database (Denmark)

    Zheng, Kaibo; Zídek, Karel; Abdellah, Mohamed

    2014-01-01

    Understanding of Förster resonance energy transfer (FRET) in thin films composed of quantum dots (QDs) is of fundamental and technological significance in optimal design of QD based optoelectronic devices. The separation between QDs in the densely packed films is usually smaller than the size...... dynamics of directed energy transfer in ordered multilayer QD films, which we also observe experimentally. The Monte Carlo simulations reveal that three ideal QD monolayers can provide exciton funneling efficiency above 80% from the most distant layer. Thereby, utilization of directed energy transfer can...... ultrafast transient absorption spectroscopy and theoretical modeling. Pairwise interdot transfer time was determined in the range of 1.5 to 2 ns by spectral analyses which enable separation of the FRET contribution from intrinsic exciton decay. A rational model is suggested by taking into account...

  5. Al/CdSe/GaSe/C resonant tunneling thin film transistors

    Science.gov (United States)

    Qasrawi, A. F.; Kayed, T. S.; Elsayed, Khaled A.

    2017-02-01

    An Al/CdSe/GaSe/C thin film transistor device was prepared by the physical vapor deposition technique at a vacuum pressure of 10-5 mbar. The x-ray diffraction measurements demonstrated the polycrystalline nature of the surface of the device. The dc current-voltage characteristics recorded for the Al/CdSe/C and Al/CdSe/GaSe/C channels displayed a resonant tunneling diode features during the forward and reverse voltage biasing, respectively. In addition, the switching current ratio of the Al/CdSe/C increased from 18.6 to 9.62×103 as a result of the GaSe deposition on the CdSe surface. Moreover, the alternating electrical signal analyses in the frequency range of 1.0 MHz to 1.8 GHz, showed some remarkable properties of negative resistance and negative capacitance spectra of the Al/CdSe/GaSe/C thin film transistors. Two distinct resonance-antiresonance phenomena in the resistance spectra and one in the capacitance spectra were observed at 0.53, 1.04 and 1.40 GHz for the Al/CdSe/C channel, respectively. The respective resonating peak positions of the resistance spectra shift to 0.38 and 0.95 GHz when GaSe is interfaced with CdSe. These features of the thin film transistors are promising for use in high quality microwave filtering circuits and also for use as ultrafast switches.

  6. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  7. Surface morphology and optical properties of cdse films obtained by the close-spaced vacuum sublimation technique

    Directory of Open Access Journals (Sweden)

    V.V. Starikov

    2009-01-01

    Full Text Available Investigation of the surface morphology, growth mechanisms and optical properties of CdSe films obtained by the close-spaced vacuum sublimation (CSVS technique, which are promising for use as the absorption layers of tandem solar cells and photodetectors, was carried out in the present paper. Measurements of the optical characteristics of the layers were performed by the spectrophotometric analysis method near the “red boundary” of semiconductor photoactivity. Performed investigations allowed to obtain the spectral distributions of the transmission T(λ, reflection R(λ, absorption α(λ, and refraction n(λ coefficients, and the real ε1(λ and imaginary ε2(λ parts of the optical dielectric constant of the samples and to define their dependence on the film deposition temperature.

  8. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  9. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  10. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  11. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  12. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  13. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  14. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  15. Magnetostrictive thin films for microwave spintronics.

    Science.gov (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  16. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  17. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  18. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  19. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  20. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  1. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  2. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  3. Fabrication of ITO/Ag3SbS3/CdX (X = S, Se) thin film heterojunctions for photo-sensing applications

    Science.gov (United States)

    Daniel, T.; Henry, J.; Mohanraj, K.; Sivakumar, G.

    2016-11-01

    Thin film heterojunctions of Ag3SbS3/CdX (X = S, Se) are deposited on a glass substrate coated with SnO2:In (ITO). The films were characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible spectroscopy, photoluminescence spectroscopy, field emission scanning electron microscopy and I-V analysis. XRD reveals the monoclinic structure of Ag3SbS3 and a fcc structure for both CdS and CdSe thin films. The AFM images clearly show the distinct morphological features (nanopyramids, wedge-shaped and rectangular nanorod-like grains). From the I-V studies, under illumination, an ITO/Ag3SbS3/CdS heterojunction produces a higher photocurrent (12.4 mA) than that an ITO/Ag3SbS3/CdSe heterojunction (1.34 mA).

  4. Doping for speed: colloidal nanoparticles for thin-film optoelectronics.

    Science.gov (United States)

    Noone, Kevin M; Ginger, David S

    2009-02-24

    Solution-processable semiconductor materials ranging from conjugated polymers and small organic molecules to colloidal inorganic nanoparticles are being studied for applications in both low-cost solar cells and photodetectors. High-quality thin films of many inorganic semiconductors can be prepared by techniques such as chemical vapor deposition, molecular beam epitaxy, and atomic layer deposition. In contrast, preparing device-quality films of inorganic materials from colloidal solutions can be more difficult due to the challenge of achieving well-defined doping, controlled trap densities, and reproducible surface chemistry. Nevertheless, solution deposition using colloidal precursors is an attractive goal because of the potential for low-cost, large-area processing. In recent years, a great deal of effort has focused on the colloidal synthesis of wide-band-gap metal oxides such as TiO(2), visible-absorbing II-VI compounds such as CdSe, and small-band-gap materials such as PbSe. Much of the work on visible- and IR-absorbing photodetectors has been done on materials containing metals such as Cd and Pb. A new paper in this issue demonstrates photoconductive detectors made from Cu-containing In(2)S(3) nanoplates. The incorporation of Cu into the In(2)S(3) nanoplates leads to a significant decrease in the lifetime of the photoexcited carriers, resulting in significantly faster response times for the photodetectors processed from colloidal solution.

  5. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  6. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  7. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  8. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  9. Interfacial Effects on Pentablock Ionomer Thin Films

    Science.gov (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw

    2011-03-01

    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  10. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit

    2014-01-01

    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  11. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  12. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail: tambauh@gmail.com; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  13. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  14. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  15. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.

    1972-01-01

    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  16. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  17. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  18. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  19. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  20. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  1. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  2. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  3. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  4. Adhesion and friction of thin metal films

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  5. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  6. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail: okrupka@mail.ru; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)

    2008-10-31

    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  7. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  8. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  9. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  10. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  11. Tungsten-doped thin film materials

    Science.gov (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  12. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  13. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2012-01-15

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  14. Sprayed lanthanum doped zinc oxide thin films

    Science.gov (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  15. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  16. Magnetowetting of Ferrofluidic Thin Liquid Films

    Science.gov (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  17. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  18. Pulsed laser deposition of ferroelectric thin films

    Science.gov (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  19. Photoluminescence Study of Copper Selenide Thin Films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.

    2011-10-01

    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  20. New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopy

    Science.gov (United States)

    Eijt, S. W. H.; Shi, W.; Mannheim, A.; Butterling, M.; Schut, H.; Egger, W.; Dickmann, M.; Hugenschmidt, C.; Shakeri, B.; Meulenberg, R. W.; Callewaert, V.; Saniz, R.; Partoens, B.; Barbiellini, B.; Bansil, A.; Melskens, J.; Zeman, M.; Smets, A. H. M.; Kulbak, M.; Hodes, G.; Cahen, D.; Brück, E.

    2017-01-01

    Recent studies showed that positron annihilation methods can provide key insights into the nanostructure and electronic structure of thin film solar cells. In this study, positron annihilation lifetime spectroscopy (PALS) is applied to investigate CdSe quantum dot (QD) light absorbing layers, providing evidence of positron trapping at the surfaces of the QDs. This enables one to monitor their surface composition and electronic structure. Further, 2D-Angular Correlation of Annihilation Radiation (2D-ACAR) is used to investigate the nanostructure of divacancies in photovoltaic-high-quality a-Si:H films. The collected momentum distributions were converted by Fourier transformation to the direct space representation of the electron-positron autocorrelation function. The evolution of the size of the divacancies as a function of hydrogen dilution during deposition of a-Si:H thin films was examined. Finally, we present a first positron Doppler Broadening of Annihilation Radiation (DBAR) study of the emerging class of highly efficient thin film solar cells based on perovskites.

  1. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  2. Studies on Hall Effect and DC Conductivity Measurements of Semiconductor Thin films Prepared by Chemical Bath Deposition (CBD method

    Directory of Open Access Journals (Sweden)

    S. Thirumavalavana

    2015-12-01

    Full Text Available Semiconductors have various useful properties that can be exploited for the realization of a large number of high performance devices in fields such as electronics and optoelectronics. Many novel semiconductors, especially in the form of thin films, are continually being developed. Thin films have drawn the attention of many researchers because of their numerous applications. As the film becomes thinner, the properties acquire greater importance in the miniaturization of elements such as resistors, transistors, capacitors, and solar cells. In the present work, copper selenide (CuSe, cadmium selenide (CdSe, zinc selenide (ZnSe, lead sulphide (PbS, zinc sulphide (ZnS, and cadmium sulphide (CdS thin films were prepared by chemical bath deposition (CBD method. The prepared thin films were analyzed by using Hall measurements in Van Der Pauw configuration (ECOPIA HMS-3000 at room temperature. The Hall parameters such as Hall mobility of the material, resistivity, carrier concentration, Hall coefficient and conductivity were determined. The DC electrical conductivity measurements were also carried out for the thin films using the conventional two – probe technique. The activation energies were also calculated from DC conductivity studies.

  3. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  4. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  5. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  6. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  7. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  8. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  9. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  10. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  11. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  12. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  13. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  14. Magnetite thin films: A simulational approach

    Energy Technology Data Exchange (ETDEWEB)

    Mazo-Zuluaga, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)]. E-mail: jomazo@fisica.udea.edu.co; Restrepo, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)

    2006-10-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent {nu}=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed.

  15. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  16. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.

    1978-03-01

    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  17. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  18. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  19. Emittance Theory for Thin Film Selective Emitter

    Science.gov (United States)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  20. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  1. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  2. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  3. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  4. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  5. Structural and Optical Studies of 100 MeV Ni+7 Irradiated Cadmium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    Rajesh Singh

    2015-10-01

    Full Text Available The effect of irradiation with Swift (100 MeV Ni+ 7 ions on the structural and optical properties of Cadmium Selenide (CdSe thin films have been investigated at different fluencies in the range of 1  1011-1  1013 ions/cm – 2. The CdSe films on glass substrates were prepared by thermal evaporation. The structural and optical changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD, UV-VIS and Raman spectroscopy. After irradiating the films with Ni+ 7 ions XRD show the increased in peak intensity and crystallite size with increasing fluence. The UV-VIS-IR spectroscopy revealed that there is decrease in band gap energy of the films after irradiation with increasing fluencies. Raman spectrum for as deposited and irradiated films show two peak, one at 209 cm – 1 and at 410 cm – 1 which is assigned to the longitudinal optical (LO phonon mode.

  6. Workshop on thin film thermal conductivity measurements

    Science.gov (United States)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  7. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  8. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Study of iron mononitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil, E-mail: mgupta@csr.res.in; Gupta, Mukul, E-mail: mgupta@csr.res.in; Phase, D. M., E-mail: mgupta@csr.res.in; Reddy, V. R., E-mail: mgupta@csr.res.in; Gupta, Ajay, E-mail: mgupta@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore,-452001 (India)

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  10. Epitaxy of layered semiconductor thin films

    Science.gov (United States)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  11. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  12. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  13. Correlated dewetting patterns in thin polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Neto, Chiara [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Jacobs, Karin [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Seemann, Ralf [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Blossey, Ralf [Centre for Bioinformatics, Saarland University, PO Box 151150, D-66041 Saarbruecken (Germany); Becker, Juergen [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany); Gruen, Guenther [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany)

    2003-01-15

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  14. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  15. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  16. Ternary compound thin film solar cells

    Science.gov (United States)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  17. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  18. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  19. Bauschinger effect in unpassivated freestanding thin films

    NARCIS (Netherlands)

    Shishvan, S.S.; Nicola, L.; Van der Giessen, E.

    2010-01-01

    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to res

  20. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  1. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  2. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials scie

  3. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance char

  4. Welding Wires To Thin Thermocouple Films

    Science.gov (United States)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  5. Quasifree Mg–H thin films

    NARCIS (Netherlands)

    Baldi, A.; Palmisano, V.; Gonzalez-Silveira, M.; Pivak, Y.; Slaman, M.; Schreuders, H.; Dam, B.; Griessen, R.

    2009-01-01

    The thermodynamics of hydrogen absorption in Pd-capped Mg films are strongly dependent on the magnesium thickness. In the present work, we suppress such dependency by inserting a thin Ti layer between Mg and Pd. By means of optical measurements, we show that the surface energy contribution to the de

  6. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  7. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  8. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  9. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  10. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  11. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  12. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  13. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  14. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  15. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  16. Nonlocal thin films in calculations of the Casimir force

    NARCIS (Netherlands)

    Esquivel-Sirvent, R.; Svetovoy, V.B.

    2005-01-01

    The Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than th

  17. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  18. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  19. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  20. Structure and optical properties of CdSe chalcogenide semiconductors

    Science.gov (United States)

    Ganaie, Mohsin; Prince, Zulfequar, M.

    2015-08-01

    CdSe bulk sample has been prepared by melt-quenching technique and were characterized with XRD, SEM, FTIR, and electrical measurements. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of 10-6 Torr. An XRD measurement reveals the coexistence of glassy and crystalline phase in bulk sample. SEM studies shows single phase, porous, and granular surface morphology of powder CdSe alloy. Optical properties (optical gap, absorption coefficient, extinction coefficient, refractive index) are calculated in the range of 190-1100nm. Analysis of the optical measurement shows that the non-direct transition is predominant and the band gap come outs to be 1.751eV. Dc conductivity measurement is thermally activated process which shows the semiconducting nature of the sample having activation energy 0.31eV.

  1. MISSE 5 Thin Films Space Exposure Experiment

    Science.gov (United States)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  2. Structural Characterization Of CdSe and ZnSe Nanostructures

    Science.gov (United States)

    Bhattacharyya, B.; Kalita, P. K.; Datta, P.

    2010-10-01

    Chemically bath deposited CdSe and ZnSe powder possesses mixed type structures whereas it is hexagonal wurtzite type in thin film form. SEM images of CdSe symmetrically exhibit the growth of spherical, rod and the rose(flower) type microstructures. ZnSe shows fine grain structures. The growth of microstructures in these selenides according to the growth direction along c-axis of hexagonal wurtzite crystal. Photoluminescence shows strong blue luminescence at 414 and 437 nm in CdSe nanoparticles. ZnSe shows strong PL at 650 nm that is attributed to the strong d-native traps. The blue shifted band gap luminescence at 392 nm shows the quantum confinement in ZnSe nanoparticles.

  3. Thin-film semiconductor rectifier has improved properties

    Science.gov (United States)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  4. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  5. Thin Film Electrochemical Power Cells

    Science.gov (United States)

    1991-01-01

    Anion Intercalating Polymer Cathode", proceedings of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. K. Naoi, W.H...of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. M. Lien and W.H. Smyrl, "An Impedance Study of Polyvinylferrocene...Films", in Transient Techniques in Corrosion Science and Engineering, eds. W.H. Smyrl, et al., Electrochemical Society , 1989. K, Naoi, M.M. Lien and

  6. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  7. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  8. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  9. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  10. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  11. Cathodoluminescence degradation of PLD thin films

    Science.gov (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  12. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  13. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  14. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  15. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... a change from ZEP resist to double layer of PMMA and always requires preliminary exposure dose-tests and final particular attention for lift-off step. EBL resulted to be more suitable for silver NPs, since the deposition of gold (on top of an adhesion thin titanium layer) leads to a variation and non...

  16. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  17. INVESTIGATION OF PHOTOELECTROCHROMIC THIN FILM AND DEVICE

    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen

    2005-01-01

    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  18. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  19. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  20. Electrochromism in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  1. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  2. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  3. EBSD analysis of electroplated magnetite thin films

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.

    2010-05-01

    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  4. Electrostatic Discharge Effects on Thin Film Resistors

    Science.gov (United States)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  5. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  6. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  7. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

  8. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; BRUMA M.; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  9. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  10. Incoherent and Laser Photodeposition on Thin Films.

    Science.gov (United States)

    1980-09-01

    mixing system. Both a carbon dioxide and dry chemical fire extinguisher were on hand in case a fire was initiated by the compounds. The dimethvlzinc was...summarizes three months of experimental effort devoted toward the production of thin films by the photodissociation of organometallic molecules containing the...that the threshold wavelength for the photodissociation of both Zn- 0 and Se- (CH3 )2 was approximately 2420A. Consequently, these laser photodeposition

  11. Design and characterization of thin film microcoolers

    Science.gov (United States)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.

    2001-04-01

    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  12. Titanium diffusion in gold thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, William E. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States); Gregori, Giuliano, E-mail: g.gregori@fkf.mpg.d [California NanoSystems Institute, University of California, Santa Barbara, CA 93106-5050 (United States); Mates, Thomas [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)

    2010-03-01

    In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 {sup o}C are investigated. The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion. It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 {sup o}C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy {Delta}E = 0.66 eV and the corresponding pre-exponential factor D{sub 0} = 5 x 10{sup -11} cm{sup 2}/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < {Delta}E{sub gb} < 0.66 eV and the pre-exponential factor s{sub 0}D{sub gb0} = 1.14 x 10{sup -8} cm{sup 2}/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 {sup o}C.

  13. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  14. Dynamic Characterization of Thin Film Magnetic Materials

    Science.gov (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  15. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  16. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  17. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  18. Optical properties of thin polymer films

    Science.gov (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan

    2009-10-01

    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  19. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  20. A New Method of Fabricating NASICON Thin Film

    Institute of Scientific and Technical Information of China (English)

    WNGLing; SUNJialin; 等

    1998-01-01

    Nasicon thin films of 15 μm thick on YSZ sub-strates were prepared by means of solid state reaction at 1230℃ for 10 hours,Stuctural characteriza-tion of the films were performed by XRD ,SEM and EDX,A new tyype of CO2 gas sensor with Nasicon thin film as solid electrolyte was developed.

  1. Bismuth thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  2. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  3. Intrinsic instability of thin liquid films on nanostructured surfaces

    Science.gov (United States)

    Rokoni, Arif; Hu, Han; Sun, Liyong; Sun, Ying

    2016-11-01

    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for stable thin film evaporation on a given nanostructure.

  4. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei

    2013-01-01

    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  5. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  6. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  7. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN

    2009-01-01

    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  8. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  9. Stripe glasses in ferromagnetic thin films

    Science.gov (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.

    2016-02-01

    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  10. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures.

    Science.gov (United States)

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  11. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  12. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  13. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  14. 3D Field Simulation of Magnetic Thin Film Inductor

    OpenAIRE

    FUJIWARA, Toshiyasu; CHOI, Kyung-Ku; SATO, SHIGEKI

    2006-01-01

    The 3D magnetic field simulations with FEM (finite element method) have been performed to predictand understand the performance of Magnetic Thin Film Inductor (MTFl). Inductor structures of planar electroplated Cu spiralcoil, which are sandwiched and underlaid with magnetic thin films, are considered as the simulation models. The inductance increment of 300% compared to air-core inductor was predicted when the sandwiched 5μm thickness magnetic thin film with relative permeability of 600 was a...

  15. Crystal structure of fiber structured pentacene thin films

    OpenAIRE

    2007-01-01

    This PhD thesis presents a technique based on the grazing incidence crystal truncation rod (GI-CTR) X-ray diffraction method used to solve the crystal structure of substrate induced fiber structured organic thin films. The crystal structures of pentacene thin films grown on technologically relevant gate dielectric substrates are reported. It is widely recognized, that the intrinsic charge transport properties in organic thin film transistors (OTFTs) depend strongly on the crystal structur...

  16. CdSe-sensitized TiO{sub 2} nanotube array film fabricated by ultrasonic-assisted electrochemical deposition and subsequently wrapped with TiO{sub 2} thin layer for the visible light photoelectrocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Ouyang Jianglin; Chang Menglei; Zhang Yuyuan [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Li Xinjun, E-mail: lixj@ms.giec.ac.cn [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640 (China)

    2012-01-31

    A composite structure, TiO{sub 2} nanotube array/CdSe nanoparticle/TiO{sub 2} layer, was fabricated by inserting CdSe nanoparticles into anodized TiO{sub 2} nanotube arrays via ultrasonic-assisted cyclic voltammetry electrochemical deposition and subsequently wrapped by a TiO{sub 2} thin layer via TiCl{sub 4} hydrolysis. The films were characterized by X-ray diffraction, field emission scanning electron microscopy, energy dispersive spectroscopy and UV-vis diffuse reflectance spectroscopy. For the film used as the photoanode, linear sweep voltammetry and transient photocurrent were investigated in a three-electrode system under visible light illumination. And the photocatalytic activity was evaluated by the oxidation of glucose in the supporting electrolyte at different potential bias under visible light illumination. The results showed that CdSe nanoparticles are prone to disperse into the nanotube arrays via cyclic voltammetry electrochemical deposition under ultrasonic condition. Increasing cyclic voltammetry cycle increases the loading of CdSe on the TiO{sub 2} nanotube arrays. The CdSe-sensitized TiO{sub 2} nanotube array films exhibit a wide-absorption response in the visible light region. The TiO{sub 2} nanotube array/CdSe/TiO{sub 2} film, prepared by ultrasonic-assisted electrochemical deposition with 50 cyclic voltammetry cycles and subsequently coating a TiO{sub 2} thin layer, exhibits better protection against photocorrosion of CdSe. The TiO{sub 2}NTA/CdSe/TiO{sub 2} film possesses visible light photoelectrocatalytic activity on the degradation of glucose. - Highlights: Black-Right-Pointing-Pointer CdSe is electrochemically deposited onto TiO{sub 2} nanotube arrays with ultrasonics. Black-Right-Pointing-Pointer TiO{sub 2} thin layer overcoating on the arrays can protect CdSe from photocorrosion. Black-Right-Pointing-Pointer TiO{sub 2} nanotube array/CdSe/TiO{sub 2} film possesses visible light photocatalytic activity.

  17. Current-induced surface roughness reduction in conducting thin films

    Science.gov (United States)

    Du, Lin; Maroudas, Dimitrios

    2017-03-01

    Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film's wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. The modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

  18. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  19. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  20. Non-local thin films in Casimir force calculations

    CERN Document Server

    Esquivel, R

    2005-01-01

    he Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than the mean free path for electrons, the difference between local and nonlocal calculations of the Casimir force is of the order of a few tenths of a percent. Thus the local description of thin metallic films is adequate within the current experimental precision and range of separations.

  1. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  2. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  3. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  4. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  5. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  6. CdSe Quantum Dots for Solar Cell Devices

    Directory of Open Access Journals (Sweden)

    A. B. Kashyout

    2012-01-01

    Full Text Available CdSe quantum dots have been prepared with different sizes and exploited as inorganic dye to sensitize a wide bandgap TiO2 thin films for QDs solar cells. The synthesis is based on the pyrolysis of organometallic reagents by injection into a hot coordinating solvent. This provides temporally discrete nucleation and permits controlled growth of macroscopic quantities of nanocrystallites. XRD, HRTEM, UV-visible, and PL were used to characterize the synthesized quantum dots. The results showed CdSe quantum dots with sizes ranging from 3 nm to 6 nm which enabled the control of the optical properties and consequently the solar cell performance. Solar cell of 0.08% performance under solar irradiation with a light intensity of 100 mW/cm2 has been obtained. CdSe/TiO2 solar cells without and with using mercaptopropionic acid (MPA as a linker between CdSe and TiO2 particles despite a Voc of 428 mV, Jsc of 0.184 mAcm-2, FF of 0.57, and η of 0.05% but with linker despite a Voc of 543 mV, Jsc of 0.318 mAcm-2 , FF of 0.48, and η of 0.08%, respectively.

  7. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters

    OpenAIRE

    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.

    1988-01-01

    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  8. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  9. Electron impinging on metallic thin film targets

    Energy Technology Data Exchange (ETDEWEB)

    Rouabah, Z. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France); Laboratoire Materiaux et Systemes Electroniques, Centre Universitaire de Bordj-Bou-Arreridj, El-Anasser, 34265 Bordj-Bou-Arreridj (Algeria); Bouarissa, N., E-mail: N_Bouarissa@yahoo.fr [Department of Physics, Faculty of Science, King Khalid University, Abha, P.O.Box 9004 (Saudi Arabia); Champion, C. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France)

    2010-03-15

    Based on the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed.

  10. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang

    2005-01-01

    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  11. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)

    R.Billet

    2004-01-01

    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  12. Birefringent thin films and polarizing elements

    CERN Document Server

    Hodgkinson, Ian J

    1997-01-01

    This book describes the propagation of light in biaxial media, the properties of biaxial thin films, and applications such as birefringent filters for tuning the wavelength of dye lasers.A novel feature of the first part is the parallel treatment of Stokes, Jones, and Berreman matrix formalisms in a chapter-by-chapter development of wave equations, basis vectors, transfer matrices, reflection and transmission equations, and guided waves. Computational tools for MATLAB are included.The second part focuses on an emerging planar technology in which anisotropic microstructures are formed by obliqu

  13. Synthesis and Characterization of Thin Films.

    Science.gov (United States)

    1987-07-10

    j,k tinteger; freq comp % array CO..203 of integer; A, phase ~carg : array CC. .2CJ of realI begin woriteln(’enter numfourierpts’);N readln(num fourier...Thesis DTIG SELECTfE: rmas do~amaat hau s appvildlttb tol a.l e... . . .o fix paut reloc~e and 9010) Is . < " ,,.’. 5’ , , "" "’’"°"" % Is ViifmyI lr...URIP) grants. 2. THIN FILM FACILITY A 1983 DoD University Research Instrumentation Program Grant to ISU was used for construction of the first phase

  14. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  15. Robust, Thin Optical Films for Extreme Environments

    Science.gov (United States)

    2006-01-01

    The environment of space presents scientists and engineers with the challenges of a harsh, unforgiving laboratory in which to conduct their scientific research. Solar astronomy and X-ray astronomy are two of the more challenging areas into which NASA scientists delve, as the optics for this high-tech work must be extremely sensitive and accurate, yet also be able to withstand the battering dished out by radiation, extreme temperature swings, and flying debris. Recent NASA work on this rugged equipment has led to the development of a strong, thin film for both space and laboratory use.

  16. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  17. Vortex motion in YBCO thin films

    Science.gov (United States)

    Shapiro, V.; Verdyan, A.; Lapsker, I.; Azoulay, J.

    1999-09-01

    Hall resistivity measurements as function of temperature in the vicinity of Tc were carried out on a thin films YBCO superconductors. A sign reversal of Hall voltage with external magnetic field applied along c axis have been observed upon crossing Tc. Hall voltage in the mixed state was found to be insensitive to the external magnetic field inversion. These effects are discussed and explained in terms of vortex motion under the influence of Magnus force balanced by large damping force. It is argued that in this model the flux-line velocity has component opposite to the superfluid current direction thus yielding a negative Hall voltage.

  18. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  19. Phase transitions in pure and dilute thin ferromagnetic films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  20. Capillary instabilities in thin films. II. Kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.

  1. Calculation of Specific Heat for Aluminium Thin Films

    Institute of Scientific and Technical Information of China (English)

    LU Yao; SONG Qing-Lin; XIA Shan-Hong

    2005-01-01

    @@ We employ Prasher's non-dimensional form to analyse the size effects on specific heat of Al thin films. Compared the calculation results of pure aluminium film with the experimental data, it is found that the reduction of phonon states is not the main reason of the size effect on the specific heat Al thin films with thickness from 10hm to 370nm. However, the Al thin film in air usually has an oxidation layer and the specific heat of the layer is smaller than Al. By including the contribution of the oxidation layer to the thin-film specific heat, the calculation results are much closer to the experimental data. This may be a possible reason of the size effects on specific heat of Al thin films.

  2. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  3. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  4. Synthesis of CdSe Quantum Dots Using Fusarium oxysporum

    OpenAIRE

    Takaaki Yamaguchi; Yoshijiro Tsuruda; Tomohiro Furukawa; Lumi Negishi; Yuki Imura; Shohei Sakuda; Etsuro Yoshimura; Michio Suzuki

    2016-01-01

    CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum) were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were pr...

  5. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  6. Microstructural and mechanical characteristics of Ni–Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petley, Vijay [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India); Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan [Department of Instrumentation and Applied Physics, IISc, Bangalore 12 (India); Chandrasekhar, U. [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India)

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  7. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  8. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  9. High temperature superconducting thin films for microwave filters

    Institute of Scientific and Technical Information of China (English)

    ZHAO; Xinjie(赵新杰); LI; Lin(李林); LEI; Chong(雷冲); TIAN; Ybngjun(田永军)

    2002-01-01

    YBa2Cu3O7-δ and Tl2Ba2CaCu2O8 thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.

  10. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  11. Thermochemical Analysis of Molybdenum Thin Films on Porous Alumina.

    Science.gov (United States)

    Lee, Kyoungjin; de Lannoy, Charles-François; Liguori, Simona; Wilcox, Jennifer

    2017-01-12

    Molybdenum (Mo) thin films (thickness thin-film composites were stable below 300 °C but had no reactivity toward gases. Mo thin films showed nitrogen incorporation on the surface as well as in the subsurface at 450 °C, as confirmed by X-ray photoelectron spectroscopy. The reactivity toward nitrogen was diminished in the presence of CO2, although no carbon species were detected either on the surface or in the subsurface. The Mo thin films have a very stable native oxide layer, which may further oxidize to higher oxidation states above 500 °C due to the reaction with the porous anodized alumina substrate. The oxidation of Mo thin films was accelerated in the presence of oxidizing gases. At 600 °C in N2, the Mo thin film on anodized alumina was completely oxidized and may also have been volatilized. The results imply that choosing thermally stable and inactive porous supports and operating in nonoxidizing conditions below 500 °C will likely maintain the stability of the Mo composite. This study provides key information about the chemical and structural stability of a Mo thin film on a porous substrate for future membrane applications and offers further insights into the integrity of thin-film composites when exposed to harsh conditions.

  12. Tools to Synthesize the Learning of Thin Films

    Science.gov (United States)

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  13. Stretchable, adhesive and ultra-conformable elastomer thin films.

    Science.gov (United States)

    Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

    2016-11-16

    Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (Tg). In this paper, we report that free-standing polystyrene (PS, Tg: 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, Tg: -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (Ra = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

  14. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  15. Vertically aligned biaxially textured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  16. Oxynitride Thin Film Barriers for PV Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  17. Amorphous molybdenum silicon superconducting thin films

    Directory of Open Access Journals (Sweden)

    D. Bosworth

    2015-08-01

    Full Text Available Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (MoxSi1−x offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz, there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  18. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  19. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  20. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  1. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  2. Peculiarities of spin reorientation in a thin YIG film.

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya. B.; Tsymbal, L. T.; Linnik, A. I.; Dan' shin, N. K.; Izotov, A. I.; Wigen, P. E.

    2002-06-28

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1{micro}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  3. Peculiarities of spin reorientation in a thin YIG film

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya.B.; Tsymbal, L.T.; Linnik, A.I.; Dan' shin, N.K.; Izotov, A.I.; Wigen, P.E

    2003-05-01

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1 {mu}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  4. Preface: Advanced Thin Film Developments and Nano Structures

    Institute of Scientific and Technical Information of China (English)

    Ray Y.Lin

    2005-01-01

    @@ In this special issue, we invited a few leading materials researchers to present topics in thin films, coatings, and nano structures. Readers will find most recent developments in topics, including recent advances in hard, tough, and low friction nanocomposite coatings; thin films for coating nanomaterials; electroless plating of silver thin films on porous Al2O3 substrate; CrN/Nano Cr interlayer coatings; nano-structured carbide derived carbon (CDC) films and their tribology; predicting interdiffusion in high-temperature coatings; gallium-catalyzed silica nanowire growth; and corrosion protection properties of organofunctional silanes. Authors are from both national laboratories and academia.

  5. Electrochemical Intercalation of Sodium into Silicon Thin Film

    Institute of Scientific and Technical Information of China (English)

    Dong-Yeon Kim; Hyo-Jun Ahn; Gyu-Bong Cho; Jong-Seon Kim; Ho-Suk Ryu; Ki-Won Kim; Jou-Hyeon Ahn; Won-Cheol Shin

    2008-01-01

    In order to investigate the possibility of Si thin film as an anode for Na battery, we studied the electrochemical intercalation of sodium into the Si film. Amorphous Si thin film electrode was prepared using DC magnetron sputtering. Sodium ion could intercalate into Si thin film upto Na0.52Si, i.e. 530mAh · g-1-Si. The first discharge capacity was 80mAh.·g-1-Si, which meant reversible amount of sodium intercalation. The discharge capacity slightly decreased to 70mAh · g-1-Si after 10 cycles.

  6. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  7. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  8. Density of organic thin films in organic photovoltaics

    Science.gov (United States)

    Zhao, Cindy X.; Xiao, Steven; Xu, Gu

    2015-07-01

    A practical parameter, the volume density of organic thin films, found to affect the electronic properties and in turn the performance of organic photovoltaics (OPVs), is investigated in order to benefit the polymer synthesis and thin film preparation in OPVs. To establish the correlation between film density and device performance, the density of organic thin films with various treatments was obtained, by two-dimensional X-ray diffraction measurement using the density mapping with respect to the crystallinity of thin films. Our results suggest that the OPV of higher performance has a denser photoactive layer, which may hopefully provide a solution to the question of whether the film density matters in organic electronics, and help to benefit the OPV industry in terms of better polymer design, standardized production, and quality control with less expenditure.

  9. A versatile platform for magnetostriction measurements in thin films

    Science.gov (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  10. Mechanism and characters of thin film lubrication at nanometer scale

    Institute of Scientific and Technical Information of China (English)

    雒建斌; 温诗铸

    1996-01-01

    Thin film lubrication is a transition region between elastohydrodynamic lubrication and boundary lubrication, A technique of relative optical interference intensity with the resolution of 0.5 nm in the vertical direction and 1.5 nm in the horizontal direction is used in a pure rolling process to measure the film thickness with different lubricants, speeds, loads and substrate surface energy. Experimental data show that the characteristics of thin film lubrication are different from those of elastohydrodynamic lubrication and boundary lubrication. As the rolling speed decreases, a critical film thickness can be found to distinguish thin film lubrication from elastohydrodynamic lubrication. Such thickness is related to the substrate surface energy, atmospheric viscosity of lubricant, etc. A physical model of thin film lubrication with the fluid layer, the ordered liquid layer and the adsorbed layer is proposed and the functions of these different layers are discussed.

  11. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  12. An overview of thin film nitinol endovascular devices.

    Science.gov (United States)

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  13. Characterization of reliability of printed indium tin oxide thin films.

    Science.gov (United States)

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  14. Altering properties of cerium oxide thin films by Rh doping

    Energy Technology Data Exchange (ETDEWEB)

    Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Haviar, Stanislav, E-mail: stanislav.haviar@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Matolín, Vladimír, E-mail: matolin@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  15. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  16. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  17. On Ginzburg-Landau Vortices of Superconducting Thin Films

    Institute of Scientific and Technical Information of China (English)

    Shi Jin DING; Qiang DU

    2006-01-01

    In this paper, we discuss the vortex structure of the superconducting thin films placed in a magnetic field. We show that the global minimizer of the functional modelling the superconducting thin films has a bounded number of vortices when the applied magnetic field hex < Hc1 + K log |log ε|where Hc1 is the lower critical field of the film obtained by Ding and Du in SIAM J. Math. Anal.,2002. The locations of the vortices are also given.

  18. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  19. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  20. The corrosion behavior of nanocrystalline nickel based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Danışman, Murat, E-mail: muratdan@gmail.com

    2016-03-01

    In this study, the effect of Cr addition on corrosion behavior of Ni thin films were investigated. Ni thin films and Ni films with three different Cr content were deposited on glass substrates by magnetron sputtering. After deposition process, thin films with different Cr content were thermally treated in a rapid thermal process system. Phase analysis and grain size calculations of the samples were carried out by X-ray diffraction analysis. In order to reveal corrosion properties, potentiodynamic tests were conducted on samples. Analysis revealed that, although Cr addition to pure-Ni thin films improved their corrosion resistance, occurrence of σ-Cr{sub 3}Ni{sub 2} phase at higher Cr contents increased corrosion rate. The corrosion properties of the samples were also investigated by electrochemical impedance spectroscopy and surface related parameters caused by corrosion reactions were calculated. The analysis revealed that at 55% wt. Cr, rapid ion exchange occurred and highest corrosion current, 23.4 nA cm{sup −2} was observed. - Highlights: • Thin film Ni–Cr samples were deposited on glass substrate. • Effect of Cr addition on corrosion behavior of Ni thin films were investigated. • Potentiodynamic tests and electrochemical impedance spectroscopy methods were used. • Cr content in Ni thin films plays and important role on corrosion. • Up to a certain Cr content, Cr addition reduces corrosion rate.

  1. Patterns and conformations in molecularly thin films

    Science.gov (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  2. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C

    2000-01-01

    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  3. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  4. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  5. Characterization of lithium phosphorous oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

    1996-01-01

    Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

  6. Nonlinear optics of astaxanthin thin films

    Science.gov (United States)

    Esser, A.; Fisch, Herbert; Haas, Karl-Heinz; Haedicke, E.; Paust, J.; Schrof, Wolfgang; Ticktin, Anton

    1993-02-01

    Carotinoids exhibit large nonlinear optical properties due to their extended (pi) -electron system. Compared to other polyenes which show a broad distribution of conjugation lengths, carotinoids exhibit a well defined molecular structure, i.e. a well defined conjugation length. Therefore the carotinoid molecules can serve as model compounds to study the relationship between structure and nonlinear optical properties. In this paper the synthesis of four astaxanthins with C-numbers ranging from 30 to 60, their preparation into thin films, wavelength dispersive Third Harmonic Generation (THG) measurements and some molecular modelling calculations will be presented. Resonant (chi) (3) values reach 1.2(DOT)10-10 esu for C60 astaxanthin. In the nonresonant regime a figure of merit (chi) (3)/(alpha) of several 10-13 esu-cm is demonstrated.

  7. Photoluminescence studies in epitaxial CZTSe thin films

    Science.gov (United States)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  8. Photodesorption from copper, beryllium, and thin films

    Science.gov (United States)

    Foerster, C. L.; Halama, H. J.; Korn, G.

    Ever increasing circulating currents in electron-positron colliders and light sources demand lower and lower photodesportion (PSD) from the surfaces of their vacuum chambers and their photon absorbers. This is particularly important in compact electron storage rings and B meson factories where photon power of several kw cm(exp -1) is deposited on the surfaces. Given the above factors, we have measured PSD from 1 m long bars of solid copper and solid beryllium, and TiN, Au and C thin films deposited on solid copper bars. Each sample was exposed to about 10(exp 23) photons/m with a critical energy of 500 eV at the VUV ring of the NSLS. PSD was recorded for two conditions: after a 200 C bake-out and after an Ar glow discharge cleaning. In addition, we also measured reflected photons, photoelectrons and desorption as functions of normal, 75 mrad, 100 mrad, and 125 mrad incident photons.

  9. Plasma synthesis of photocatalytic TiO x thin films

    Science.gov (United States)

    Sirghi, L.

    2016-06-01

    The development of efficient photocatalytic materials is promising technology for sustainable and green energy production, fabrication of self-cleaning, bactericidal, and super hydrophilic surfaces, CO2 photoreduction, and decomposition of toxic pollutants in air and water. Semiconductors with good photocatalytic activity have been known for four decades and they are regarded as promising candidates for these new technologies. Low-pressure discharge plasma is one of the most versatile technologies being used for the deposition of photocatalytic semiconductor thin films. This article reviews the main results obtained by the author in using low-pressure plasma for synthesis of TiO x thin films with applications in photocatalysis. Titanium dioxide thin films were obtained by radio frequency magnetron sputtering deposition, plasma enhanced chemical vapour deposition, and high power impulse magnetron sputtering deposition. The effects of the plasma deposition method, plasma parameters, film thickness and substrate on the film structure, chemical composition and photocatalytic activity are investigated. The photocatalytic activity of plasma synthesised TiO x thin films was estimated by UV light induced hydrophilicity. Measurements of photocurrent decay in TiO x thin films in vacuum and air showed that the photocatalytic activity is closely connected to the production, recombination and availability for surface reactions of photo-generated charge carriers. The photocatalytic activity of TiO x thin films was investigated at nanoscale by atomic force microscopy. Microscopic regions of different hydrophilicity on UV light irradiated films are discriminated by AFM atomic force microscopy measurements of adhesion and friction force.

  10. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  11. Orthogonal thin film magnetometer using the anisotropic magnetoresistance effect

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1984-01-01

    In an orthogonal thin film magnetometer a driving field oriented in the plane of a permalloy film along its hard-axis, saturates this film periodically in positive and negative direction. On return from saturation and in absence of a magnetic field component along the easy-axis, the magnetization in

  12. Reorientation of magnetic anisotropy in obliquely sputtered metallic thin films

    NARCIS (Netherlands)

    Lisfi, A.; Lodder, J.C.; Wormeester, H.; Poelsema, B.

    2002-01-01

    Reorientation in the magnetic anisotropy as a function of film thickness has been observed in Co-Ni and Co thin films, obliquely sputtered on a polyethylene terephthalate substrate at a large incidence angle (70°). This effect is a consequence of the low magnetocrystalline anisotropy of the films (f

  13. Structural and optical characterization of polycrystalline CdSe{sub x}Te{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M.; Farag, A.A.M.; El-Sayed, H.E.A. [Faculty of Education, Ain Shams University, Cairo (Egypt)

    2003-11-01

    Solid solutions of CdSe{sub x}Te{sub 1-x} (0.7{<=}x{<=}1) were synthesized by vacuum fusion of stoichiometric amounts of CdSe and CdTe constituents in a silica tube. X-ray and electron microscope diffractometry techniques revealed that the CdSe{sub x}Te{sub 1-x} thin films were polycrystalline with a hexagonal structure. The variation of lattice constants with composition was found to obey Vegard's law. The compositional dependence of the optical constants, the refractive index n and the absorption index k, of the films was determined in the spectral range of 400-2000 nm. The dispersion of the refractive index of the films could be described using the Wemple-DiDomenico single oscillator model. Changes of the dispersion parameters were also studied as a function of the mole fraction x. A plot representing {alpha}{sup 2}=f(h{nu}) showed that the CdSe{sub x}Te{sub 1-x} thin films of different compositions have two direct transitions corresponding to the energy gaps E{sub g} and E{sub g}+{delta}. The variation in either E{sub g} or E{sub g}+{delta} with x indicates that this system belongs to the amalgamation type. The variation follows a quadratic dependence and the bowing parameters were found to be 0.4 and 0.5 eV, respectively. (orig.)

  14. Wettability and photochromic behaviour of Molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Allogho, Guy-Germain, E-mail: guy-germain.allogho@umoncton.ca; Ashrit, P.V., E-mail: pandurang.ashrit@umoncton.ca

    2012-01-01

    The temporal wettability (hydrophobic-hydrophilic) behaviour of thermally evaporated Molybdenum oxide thin films is examined via water droplet contact angle and water droplet lifetime measurements. Super-hydrophilic state is quickly achieved in these films and the rapidity of this conversion depends strongly on the film preparation conditions. It is found that film microstructure, humidity content and UV irradiation have a profound influence on the wettability behaviour of these films. The ensuing photochromic effect under UV irradiation is also followed through the optical changes occurring in the film. Films deposited at higher chamber pressure have a generally smaller initial contact angle and lifetime.

  15. Optical and Structural Investigation of CdSe Quantum Dots Dispersed in PVA Matrix and Photovoltaic Applications

    OpenAIRE

    Pallabi Phukan; Dulen Saikia

    2013-01-01

    CdSe quantum dots (QDs) dispersed in polyvinyl alcohol (PVA) matrix with their sizes within the quantum dot regime have been synthesized via a simple heat induced thermolysis technique. The effect of the concentrations of the cadmium source on the optical properties of CdSe/PVA thin films was investigated through UV-Vis absorption spectroscopy. The structural analysis and particle size determination as well as morphological studies of the CdSe/PVA nanocomposite thin films were done with the h...

  16. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad

    2008-11-01

    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  17. Optical and Structural Investigation of CdSe Quantum Dots Dispersed in PVA Matrix and Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Pallabi Phukan

    2013-01-01

    Full Text Available CdSe quantum dots (QDs dispersed in polyvinyl alcohol (PVA matrix with their sizes within the quantum dot regime have been synthesized via a simple heat induced thermolysis technique. The effect of the concentrations of the cadmium source on the optical properties of CdSe/PVA thin films was investigated through UV-Vis absorption spectroscopy. The structural analysis and particle size determination as well as morphological studies of the CdSe/PVA nanocomposite thin films were done with the help of X-ray diffraction (XRD and transmission electron microscopy (TEM. The XRD analysis reveals that CdSe/PVA nanocomposite thin film has a hexagonal (wurtzite structure. A prototype thin film solar cell of CdSe/CdTe has been synthesized and its photovoltaic parameters were measured.

  18. Eddy current analysis of thin film recording heads

    Science.gov (United States)

    Shenton, D.; Cendes, Z. J.

    1984-03-01

    Due to inherently thin pole tips which enhance the sharpness of read/write pulses, thin-film magnetic recording heads provide a unique potential for increasing disk file capacity. However, the very feature of these heads which makes them attractive in the recording process, namely, their small size, also makes thin-film heads difficult to study experimentally. For this reason, a finite element simulation of the thin-film head has been developed to provide the magnetic field distribution and the resistance/inductance characteristics of these heads under a variety of conditions. A study based on a one-step multipath eddy current procedure is reported. This procedure may be used in thin film heads to compute the variation of magnetic field with respect to frequency. Computations with the IBM 3370 head show that a large phase shift occurs due to eddy currents in the frequency range 1-10 MHz.

  19. Plasma polymerised thin films for flexible electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Mohan V., E-mail: mohan.jacob@jcu.edu.au [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Shanks, Robert A. [Applied Sciences, RMIT University, GPO Box 2476V, Melbourne 3001 (Australia)

    2013-11-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer.

  20. Organic photo detectors for an integrated thin-film spectrometer

    Science.gov (United States)

    Peters, Sabine; Sui, Yunwu; Glöckler, Felix; Lemmer, Uli; Gerken, Martina

    2007-09-01

    We introduce a thin-film spectrometer that is based on the superprism effect in photonic crystals. While the reliable fabrication of two and three dimensional photonic crystals is still a challenge, the realization of one-dimensional photonic crystals as thin-film stacks is a relatively easy and inexpensive approach. Additionally, dispersive thin-film stacks offer the possibility to custom-design the dispersion profile according to the application. The thin-film stack is designed such that light incident at an angle experiences a wavelength-dependent spatial beam shift at the output surface. We propose the monolithic integration of organic photo detectors to register the spatial beam position and thus determine the beam wavelength. This thin-film spectrometer has a size of approximately 5 mm2. We demonstrate that the output position of a laser beam is determined with a resolution of at least 20 μm by the fabricated organic photo detectors. Depending on the design of the thin-film filter the wavelength resolution of the proposed spectrometer is at least 1 nm. Possible applications for the proposed thin-film spectrometer are in the field of absorption spectroscopy, e.g., for gas analysis or biomedical applications.

  1. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  2. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳

    2015-01-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  3. Study of structural and optical properties of Cd{sub 1-x}Zn{sub x}Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wahab, L.A., E-mail: aly_lo2003@yahoo.com [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt); Zayed, H.A. [University Collage of Women for Art, Science and Education, Ain Shams University, Cairo (Egypt); El-Galil, A.A. Abd [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

    2012-06-01

    Cd{sub 1-x}Zn{sub x}Se (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient {alpha} and the optical band gap E{sub g}. The linear relation of ({alpha}h{upsilon}){sup 2} as a function of photon energy h{upsilon} for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity {sigma}{sub opt}, complex dielectric constant, relaxation time {tau} and dissipation factor tan{delta} were determined. The optical dispersion parameters E{sub 0}, E{sub d} were determined according to Wemple and Di Domenico method. - Highlights: Black-Right-Pointing-Pointer ZnSe thin film has cubic zinc blende structure while CdSe and Cd{sub 0.5}Zn{sub 0.5}Se thin films have hexagonal structure. Black-Right-Pointing-Pointer Grain size of Cd{sub 1-x}Zn{sub x}Se decreases with increasing x (x = 0, 0.5 and 1). Black-Right-Pointing-Pointer Optical band gap increases with increasing x.

  4. Nanoscale Thin Film Electrolytes for Clean Energy Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nandasiri, Manjula I.; Sanghavi, Rahul P.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2012-02-01

    Ceria and zirconia based systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air pollution by developing efficient, reliable oxygen sensors. In this study, we have used oxygen plasma assisted molecular beam epitaxy (OPA-MBE) to grow samaria doped ceria (SDC), to understand the role of dopant concentration and geometry of the films towards the ionic conduction in these thin films. We have also discussed the Gd doped CeO2 (GDC) and Gd stabilized ZrO2 (GSZ) multi-layer thin films to investigate the effect of interfacial phenomena on the ionic conductivity of these hetero-structures. We found the optimum concentration to be 15 mol % SmO1.5, for achieving lowest electrical resistance in SDC thin films. The electrical resistance decreases with the increase in film thickness up to 200 nm. The results demonstrate the usefulness of this study towards establishing an optimum dopant concentration and choosing an appropriate thin film thickness to ameliorate the conductance of the SDC material system. Furthermore, we have explored the conductivity of highly oriented GDC and GSZ multi-layer thin films, wherein the conductivity increased with an increase in the number of layers. The extended defects and lattice strain near the interfaces increase the density of oxygen vacancies, which leads to enhanced ionic conductivity in multi-layer thin films.

  5. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  6. Grain size and film thickness effect on the thermal expansion coefficient of FCC metallic thin films.

    Science.gov (United States)

    Hwang, Seulgi; Kim, Youngman

    2011-08-01

    Thin films are used in wide range of applications in industry, such as solar cells and LEDs. When thin films are deposited on substrates, various stresses are generated due to the mechanical difference between the film and substrate. These stresses can cause defects, such as cracking and buckling. Therefore, knowledge of the mechanical properties is important for improving their reliability and stability. In this study, the thermal expansion coefficient of FCC metallic thin films, such as Ag and Cu, which have different grain sizes and thicknesses, were calculated using the thermal cycling method. As a result, thermal expansion coefficient increased with increasing grain size. However, the film thickness had no remarkable effect.

  7. Buckling of Thin Films in Nano-Scale

    Science.gov (United States)

    Wang, S.; Jia, H. K.; Sun, J.; Ren, X. N.; Li, L. A.

    2010-06-01

    Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  8. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  9. Nonlinear optical properties of Au/PVP composite thin films

    Institute of Scientific and Technical Information of China (English)

    Shen Hong; Cheng Bo-Lin; Lu Guo-Wei; Wang Wei-Tian; Guan Dong-Yi; Chen Zheng-Hao; Yang Guo-Zhen

    2005-01-01

    Colloidal Au and poly(vinylpyrrolidone) (PVP) composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of films.

  10. Growth of oriented rare-earth-transition-metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fullerton, E.E.; Sowers, C.H.; Bader, S.D. [Argonne National Lab., IL (United States); Wu, X.Z. [Argonne National Lab., IL (United States)]|[Northern Illinois Univ., DeKalb, IL (United States)

    1996-04-01

    Rare-earth-transition-metal thin films are successfully grown by magnetron sputtering onto single-crystal MgO substrates with epitaxial W buffer layers. The use of epitaxial W buffer layers allows oriented single-phase films to be grown. Sm-Co films grown onto W(100), have strong in-plane anisotropy and coercivities exceeding 5 T at 5 K whereas Fe-Sm films have strong perpendicular anisotropy and are magnetically soft.

  11. Weakly nonlinear stability of ultra-thin slipping films

    Institute of Scientific and Technical Information of China (English)

    HU Guohui

    2005-01-01

    A weakly nonlinear theory is presented to study the effects of slippage on the stability of the ultra-thin polymer films.The nonlinear mathematical model is constructed for perturbations of small finite amplitude based on hydrodynamic equations with the long wave approximation. Results reveal that the nonlinearity always accelerates the rupture of the films. The influences of the slip length, film thickness, and initial amplitude of perturbations on the rupture of the films are investigated.

  12. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  13. Lead-free relaxor thin films of tungsten bronze symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Michau, D; Simon, A; Maglione, M, E-mail: d.michau@icmcb-bordeaux.cnrs.f [CNRS, Universite de Bordeaux, ICMCB, 87 Avenue Dr Schweitzer, Pessac, F-33608 (France)

    2009-04-07

    We have processed Ba{sub 1+x/2}LaNb{sub 5-x}Ti{sub x}O{sub 15} thin films using radio-frequency magnetron sputtering. Using XRD, SEM, x-ray microprobe and RBS, the polycrystalline films have been optimized as to reach the nominal composition. Dielectric experiments have been performed on ceramics and thin films for frequencies between 100 Hz and 5 MHz in the temperature range 100-420 K. In the most stoichiometric films, relaxor behaviour is evidenced whose features are similar to those of ceramics of the same composition. Such an agreement between ceramics and thin films relaxors is only rarely reported in lead-free materials. Moreover, the relaxor state was reported in perovskite films and our present report broadens the range of structures in which it can occur.

  14. Novel phthalocyanine thin film for compact disc recordable

    Institute of Scientific and Technical Information of China (English)

    Yongyou Geng(耿永友); Donghong Gu(顾冬红); Yiqun Wu(吴谊群); Fuxi Gan(干福熹)

    2003-01-01

    In this paper, the spin-coated thin films of phthalocyanine dye are presented. Absorption spectrum ofthe thin film shows a comparatively broad absorption in the wavelength range 630 - 770 nm. Opticalparameters of the thin film were measured by a spectroscopic ellipsometer system. 5-in CD-R discs madeof this dye exhibit good performance with Yamaha 20-speed recorder. Jitters of land and pit are less than30 ns, and the 3T-11T's signals show very good quality. This dye is a promising recording medium forCD-R with much higher recording speed.

  15. Optical modeling and simulation of thin-film photovoltaic devices

    CERN Document Server

    Krc, Janez

    2013-01-01

    In wafer-based and thin-film photovoltaic (PV) devices, the management of light is a crucial aspect of optimization since trapping sunlight in active parts of PV devices is essential for efficient energy conversions. Optical modeling and simulation enable efficient analysis and optimization of the optical situation in optoelectronic and PV devices. Optical Modeling and Simulation of Thin-Film Photovoltaic Devices provides readers with a thorough guide to performing optical modeling and simulations of thin-film solar cells and PV modules. It offers insight on examples of existing optical models

  16. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  17. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  18. Organic nanostructured thin film devices and coatings for clean energy

    CERN Document Server

    Zhang, Sam

    2010-01-01

    Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy. This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the proc

  19. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo

    2011-01-01

    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  20. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  1. Development of Thin Film Ceramic Thermocouples for High Temperature Environments

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.

    2004-01-01

    The maximum use temperature of noble metal thin film thermocouples of 1100 C (2000 F) may not be adequate for use on components in the increasingly harsh conditions of advanced aircraft and next generation launch technology. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically found in the form of rods or probes. NASA Glenn Research Center is investigating the feasibility of ceramics as thin film thermocouples for extremely high temperature applications to take advantage of the stability and robustness of ceramics and the non-intrusiveness of thin films. This paper will discuss the current state of development in this effort.

  2. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  3. Process compilation methods for thin film devices

    Science.gov (United States)

    Zaman, Mohammed Hasanuz

    This doctoral thesis presents the development of a systematic method of automatic generation of fabrication processes (or process flows) for thin film devices starting from schematics of the device structures. This new top-down design methodology combines formal mathematical flow construction methods with a set of library-specific available resources to generate flows compatible with a particular laboratory. Because this methodology combines laboratory resource libraries with a logical description of thin film device structure and generates a set of sequential fabrication processing instructions, this procedure is referred to as process compilation, in analogy to the procedure used for compilation of computer programs. Basically, the method developed uses a partially ordered set (poset) representation of the final device structure which describes the order between its various components expressed in the form of a directed graph. Each of these components are essentially fabricated "one at a time" in a sequential fashion. If the directed graph is acyclic, the sequence in which these components are fabricated is determined from the poset linear extensions, and the component sequence is finally expanded into the corresponding process flow. This graph-theoretic process flow construction method is powerful enough to formally prove the existence and multiplicity of flows thus creating a design space {cal D} suitable for optimization. The cardinality Vert{cal D}Vert for a device with N components can be large with a worst case Vert{cal D}Vert≤(N-1)! yielding in general a combinatorial explosion of solutions. The number of solutions is hence controlled through a-priori estimates of Vert{cal D}Vert and condensation (i.e., reduction) of the device component graph. The mathematical method has been implemented in a set of algorithms that are parts of the software tool MISTIC (Michigan Synthesis Tools for Integrated Circuits). MISTIC is a planar process compiler that generates

  4. Electrochromic performances of nonstoichiometric NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moulki, H.; Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Mihelčič, M.; Vuk, A. Šurca [National Institute of Chemistry, NIC, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Švegl, F. [Amanova Ltd., Tehnološki Park 18, SI-1000 Ljubljana (Slovenia); Orel, B. [National Institute of Chemistry, NIC, Hajdrihova 19, SI-1000 Ljubljana (Slovenia); Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Alfredsson, M.; Chadwick, A.V. [Functional Materials Group, School of Physical Sciences, University of Kent, Canterbury, Kent CT2 7NH (United Kingdom); Gianolio, D. [Diamond Light Source Ltd., Harwell Science and Innovation Campus, OX11 0DE Didcot (United Kingdom); Rougier, A., E-mail: Rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2014-02-28

    Electrochromic (EC) performances of Ni{sup 3+} containing NiO thin films, called modified NiO thin films, prepared either by pulsed laser deposition or by chemical route are reported. When cycled in lithium based electrolyte, the comparison of the EC behavior of nonstoichiometric NiO thin films points out a larger optical contrast for the films synthesized by chemical route with the absence of an activation period on early electrochemical cycling due in particular to a larger porosity. Herein we demonstrate faster kinetics for modified NiO thin films cycled in lithium ion free electrolyte. Finally, X-ray absorption spectroscopy is used for a preliminary understanding of the mechanism involved in this original EC behavior linked to the film characteristics including their disorder character, the presence of Ni{sup 3+} and their porous morphology. - Highlights: • Nonstoichiometric NiO thin films • Electrochromic performances in lithium free electrolyte • X-ray absorption spectroscopy investigation of as-deposited films and upon cycling.

  5. Effect of annealing on the structural and optical properties of indium-diffused Cd0.7Zn0.3Se thin films

    Science.gov (United States)

    Chavhan, S. D.; Senthilarasu, S.; Lee, J.; Lee, Soo-Hyoung

    2008-08-01

    Cadmium zinc-selenide (Cd0.7Zn0.3Se) thin films were deposited on the ITO substrate using chemical bath deposition techniques by optimizing the deposition parameters. The as-deposited films were annealed in air at 200, 300 and 400 °C for 1 h. The composition, surface morphology and structural properties of the as-deposited and annealed Cd0.7Zn0.3Se thin films were studied using x-ray photoelectron spectroscopy, scanning electron microscopy and x-ray diffraction techniques. The as-deposited films exhibited the hexagonal phase of CdSe and ZnSe. The films annealed at 200 °C showed the dominant cubic phase of CdSe and the hexagonal phase of ZnSe. However, the cubic structure of Cd0.7Zn0.3Se was transformed into a hexagonal structure after annealing at 300 and 400 °C. The lattice parameter a for the cubic structure was 6.0865 Å, whereas for the hexagonal structure a varied from 4.3035 to 4.2938 Å and c varied from 7.0916 to 6.9868 Å. The optical absorption spectra were recorded within the range 350-800 nm. The optical band gaps were 2.08 eV, 2.03 eV, 1.91 eV and 1.72 eV for the as-deposited films and those annealed at 200 °C, 300 °C and 400 °C, respectively. The drastic decrease in the optical band gap at 300 and 400 °C was due to the indium diffusion into the Cd0.7Zn0.3Se matrix.

  6. Stress in Thin Films; Diffraction Elastic Constants and Grain Interaction

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Untextured bulk polycrystals usually possess macroscopically isotropic elastic properties whereas for most thin films transverse isotropy is expected, owing to the limited dimensionality. The usually applied models for the calculation of elastic constants of polycrystals from single crystal elastic constants (so-called grain interaction models) erroneously predict macroscopic isotropy for an (untextured) thin film. This paper presents a summary of recent work where it has been demonstrated for the first time by X-ray diffraction analysis of stresses in thin films that elastic grain interaction can lead to macroscopically elastically anisotropic behaviour (shown by non-linear sin2ψ plots). A new grain interaction model, predicting the macroscopically anisotropic behaviour of thin films, is proposed.

  7. Rip-Stop Reinforced Thin Film Sun Shield Structure Project

    Data.gov (United States)

    National Aeronautics and Space Administration — During a proposed Phase I and Phase II program, PSI will advance the TRL from 3 to 6 for the ripstop reinforcement of thin film membranes used for large deployable...

  8. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  9. Hydrogenation Effect on Mg/Co Multilayer Thin Films

    Directory of Open Access Journals (Sweden)

    M. K. JANGID

    2010-11-01

    Full Text Available Multilayer Mg/Co thin films have been prepared using thermal evaporation method at pressure 10-5torr. Annealing of structure has been performed in atmospheric condition at 600 K constant temperature for one hour. Hydrogenation of annealed thin films has been performed by keeping these in hydrogenation cell at different hydrogen pressures for 30 min. The UV–VIS absorption spectra of thin films have been carried out at room temperature in the wavelength range of 300–800 nm. The optical band gap was found to be increase and conductivity has been found to be decreased with hydrogen pressure. The relative resistivity varies nonlinearly with time and increases with hydrogen pressure. Raman spectra of these sample shows decreasing intensity of peaks with hydrogenation. These results suggested that multilayer Mg/Co thin films structures can be used for hydrogen storage as well as solar collector materials.

  10. Comparison of metallization systems for thin film hybrid microcircuits

    Energy Technology Data Exchange (ETDEWEB)

    Hines, R.A.; Raut, M.K.

    1980-08-01

    Five metallization systems were evaluated for fabricating thin film hybrid microcircuits. The titanium/palladium/electroplated gold system proved superior in terms of thermocompression bondability, corrosion resistance, and solderability.

  11. Modeling plasmonic scattering combined with thin-film optics.

    Science.gov (United States)

    Schmid, M; Klenk, R; Lux-Steiner, M Ch; Topic, M; Krc, J

    2011-01-14

    Plasmonic scattering from metal nanostructures presents a promising concept for improving the conversion efficiency of solar cells. The determination of optimal nanostructures and their position within the solar cell is crucial to boost the efficiency. Therefore we established a one-dimensional optical model combining plasmonic scattering and thin-film optics to simulate optical properties of thin-film solar cells including metal nanoparticles. Scattering models based on dipole oscillations and Mie theory are presented and their integration in thin-film semi-coherent optical descriptions is explained. A plasmonic layer is introduced in the thin-film structure to simulate scattering properties as well as parasitic absorption in the metal nanoparticles. A proof of modeling concept is given for the case of metal-island grown silver nanoparticles on glass and ZnO:Al/glass substrates. Using simulations a promising application of the nanoparticle integration is shown for the case of CuGaSe(2) solar cells.

  12. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  13. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  14. Light waves in thin films and integrated optics.

    Science.gov (United States)

    Tien, P K

    1971-11-01

    Integrated optics is a far-reaching attempt to apply thin-film technology to optical circuits and devices, and, by using methods of integrated circuitry, to achieve a better and more economical optical system. The specific topics discussed here are physics of light waves in thin films, materials and losses involved, methods of couplings light beam into and out of a thin film, and nonlinear interactions in waveguide structures. The purpose of this paper is to review in some detail the important development of this new and fascinating field, and to caution the reader that the technology involved is difficult because of the smallness and perfection demanded by thin-film optical devices.

  15. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-05-01

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  16. Drop impact on thin liquid films using TIRM

    Science.gov (United States)

    Pack, Min; Ying Sun Team

    2015-11-01

    Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

  17. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  18. Nanoindentation and Adhesion Properties of Ta Thin Films

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2013-01-01

    Full Text Available Ta films were sputtered onto a glass substrate with thicknesses from 500 Å to 1500 Å under the following conditions: (a as-deposited films were maintained at room temperature (RT, (b films were postannealed at TA=150°C for 1 h, and (c films were postannealed at TA=250°C for 1 h. X-ray diffraction (XRD results revealed that the Ta films had a body-centered cubic (BCC structure. Postannealing conditions and thicker Ta films exhibited a stronger Ta (110 crystallization than as-deposited and thinner films. The nanoindention results revealed that Ta thin films are sensitive to mean grain size, including a valuable hardness (H and Young’s modulus (E. High nanomechanical properties of as-deposited and thinner films can be investigated by grain refinement, which is consistent with the Hall-Petch effect. The surface energy of as-deposited Ta films was higher than that in postannealing treatments. The adhesion of as-deposited Ta films was stronger than postannealing treatments because of crystalline degree effect. The maximal H and E and the optimal adhesion of an as-deposited 500-Å-thick Ta film were 15.6 GPa, 180 GPa, and 51.56 mJ/mm2, respectively, suggesting that a 500-Å-thick Ta thin film can be used in seed and protective layer applications.

  19. Scanned probe microscopy for thin film superconductor development

    Energy Technology Data Exchange (ETDEWEB)

    Moreland, J. [National Institute of Standards and Technology, Boulder, CO (United States)

    1996-12-31

    Scanned probe microscopy is a general term encompassing the science of imaging based on piezoelectric driven probes for measuring local changes in nanoscale properties of materials and devices. Techniques like scanning tunneling microscopy, atomic force microscopy, and scanning potentiometry are becoming common tools in the production and development labs in the semiconductor industry. The author presents several examples of applications specific to the development of high temperature superconducting thin films and thin-film devices.

  20. Thin-film limit formalism applied to surface defect absorption

    OpenAIRE

    Holovsky, Jakub; Ballif, Christophe

    2014-01-01

    The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e. g. on a top of a layer of amorphous silicon. We develop a new method o...

  1. Electrical characterization Of SiGe thin films

    OpenAIRE

    1991-01-01

    An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, gro...

  2. Low temperature Hall effect in bismuth chalcogenides thin films

    OpenAIRE

    Kuntsevich, A. Yu.; Gabdullin, A. A.; Prudkogliad, V. A.; Selivanov, Yu. G.; Chizhevskii, E. G.; Pudalov, V. M.

    2016-01-01

    Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenologi...

  3. Nonlinear Absorption Properties of nc-Si:H Thin Films

    Institute of Scientific and Technical Information of China (English)

    GUO Zhenning; GUO Hengqun; LI Shichen; HUANG Yongzhen; WANG Qiming

    2001-01-01

    It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.

  4. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  5. Form Birefringence in Thin Films with Oblique Columnar Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Jian-Guo; SHAO Jian-Da; WANG Su-Mei; HE Hong-Bo; FAN Zheng-Xiu

    2005-01-01

    @@ Effective medium theory is useful for designing optical elements with form birefringent subwavelength structures. Thinfilms fabricated by oblique deposition are similar to the two-dimensional surface relief subwavelength gratings. We use the effective medium theory to calculate the anisotropic optical properties of the thin films with oblique columnar structures. The effective refractive indices and the directions are calculated from effective medium theory. It is shown that optical thin films with predetermined refractive indices and birefringence may be engineered.

  6. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  7. Metallic glass thin films for potential biomedical applications.

    Science.gov (United States)

    Kaushik, Neelam; Sharma, Parmanand; Ahadian, Samad; Khademhosseini, Ali; Takahashi, Masaharu; Makino, Akihiro; Tanaka, Shuji; Esashi, Masayoshi

    2014-10-01

    We introduce metallic glass thin films (TiCuNi) as biocompatible materials for biomedical applications. TiCuNi metallic glass thin films were deposited on the Si substrate and their structural, surface, and mechanical properties were investigated. The fabricated films showed good biocompatibility upon exposure to muscle cells. Also, they exhibited an average roughness of films was shown to be free from Ni and mainly composed of a thin titanium oxide layer, which resulted in the high surface biocompatibility. In particular, there was no cytotoxicity effect of metallic glass films on the C2C12 myoblasts and the cells were able to proliferate well on these substrates. Low cost, viscoelastic behavior, patternability, high electrical conductivity, and the capability to coat various materials (e.g., nonbiocompatible materials) make TiCuNi as an attractive material for biomedical applications.

  8. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    oriented ZnO:Ga thin  films  deposited  on  glass  by  laser   ablation   at  different  deposition  temperatures.  The  surface  morphology,  crystalline...resistivity  value  (7  ×  10‐4  Ωcm)  in  200  nm  thickness  samples  deposited  on  glass  substrate by  laser   ablation  at 300 oC.    Highly  conducting...number, and atomic  arrangements of  metal   cations  in  crystalline or  amorphous oxide  structures, on  the  resident  morphology, and on the presence of

  9. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  10. Thin films of xyloglucans for BSA adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Jo, T.A. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Petri, D.F.S. [Institute of Chemistry, University of Sao Paulo, Sao Paulo, SP (Brazil); Valenga, F. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Lucyszyn, N. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Sierakowski, M.-R. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil)], E-mail: mariarita.sierakowski@ufpr.br

    2009-03-01

    In this work, XG extracted from Tamarindus indica (XGT) and Copaifera langsdorffii (XGC) seeds were deposited onto Si wafers as thin films. The characteristics of XGT and XGC adsorbed layers were compared with a commercial XG sample (TKP, Tamarind kernel powder) by ellipsometry and atomic force microscopy (AFM). Moreover, the adsorption of oxidized derivative of XGT (To60) onto amino-terminated Si wafers and the immobilization of bovine serum albumin (BSA) onto polysaccharides covered wafers, as a function of pH, were also investigated. The XG samples presented molar ratios Glc:Xyl:Gal of 2.4:2.1:1 (XGC); 2.8: 2.3: 1 (XGT) and 1.9:1.9:1 (TKP). The structure of XGT and XGC was determined by O-methy alditol acetate derivatization and showed similar features, but XGC confirmed the presence of more {alpha}-D-Xyl branches due to more {beta}-D-Gal ends. XGT deposited onto Si adsorbed as fibers and small entities uniformly distributed, as evidenced by AFM, while TPK and XGC formed larger aggregates. The thickness of To60 onto amino-terminated surface was similar to that determined for XGT onto Si wafers. A maximum in the adsorbed amount of BSA occurred close to its isoelectric point (5.5). These findings indicate that XGT and To60 are potential materials for the development of biomaterials and biotechnological devices.

  11. Thin Film Photovoltaics: Markets and Industry

    Directory of Open Access Journals (Sweden)

    Arnulf Jäger-Waldau

    2012-01-01

    Full Text Available Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for solar modules. Prices for photovoltaic electricity generation systems have more than halved over the last five years making the technology affordable to an ever-increasing number of customers worldwide. With worldwide over 60 GW cumulative installed photovoltaic electricity generation capacity installed in November 2011, photovoltaics still is a small contributor to the electricity supply, and another 10 to 15 years of sustained and aggressive growth will be required for photovoltaic solar electricity to become one of the main providers of electricity. To achieve this, a continuous improvement of the current solar cell technologies will be necessary.

  12. Degradation analysis of thin film photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  13. Electrophysical Properties of Nanocrysyalline Platinum Thin Films

    Directory of Open Access Journals (Sweden)

    K.V. Tyschenko

    2013-03-01

    Full Text Available The results of research structural and phase state, termoresistive properties (resistivity, temperature coefficient of resistance (TCR in the range of temperature ΔТа = 300-630 К and tensoresistive properties (gauge factor in the range of deformation Δεl1 = (0-1 %, Δεl2 = (0-2 % were presented. Thin films Pt have fcc structure with lattice parameter ā = 0,390 nm after condensation and annealing. The temperature dependences characterized by relatively large value of resistivity (ρ ~ 10 – 7 Ohm·m and relatively small value of TCR (β ~ 10 – 4 K – 1 respectively. Strain properties characterized by a wide interval of elastic deformation (more than 1 %. The deformation coefficient of electron mean free path (λ0 ηλ0l ≈ 9 and changing electron mean free path Δλ0 ≈ = 2 nm were calculated.

  14. PEDOT:PSS thin film for photovoltaic application

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2013-08-01

    Full Text Available Purpose: The aim of this paper was to investigate changes in surface morphology and optical parameters of thin films of poly(3,4-ethylenedioxythiophene poly(styrenesulfonate (PEDOT:PSS. Thin films were prepared using spin coating method. Design/methodology/approach: The thin films of PEDOT:PSS was investigate by Raman scattering technique in Raman spectrometer. The changes in surface topography were observed with the atomic force microscope AFM XE-100. The results of roughness have been prepared in the software XEI Park Systems. The measurement of optical parameter was performed using spectrometer UV/VIS and spectroscopic ellipsometer. Findings: Results and their analysis allow to conclude that the PEDOT:PSS solution concentration and spin speed, an important factor in spin coating technology, have a significant influence on surface morphology and optical reflection of thin films. Practical implications: Knowledge about the sol gel PEDOT:PSS optical parameters and the possibility of obtaining a uniform thin films show that it can be good material for photovoltaic and optoelectronic devices. Originality/value: The paper presents some researches of PEDOT:PSS thin films deposited by spin coating method on glass substrate

  15. Methods for preparing colloidal nanocrystal-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

    2016-05-10

    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  16. Characterization of polymer thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Palla-Papavlu, A.; Dinca, V.; Ion, V.; Moldovan, A.; Mitu, B.; Luculescu, C.; Dinescu, M.

    2011-04-01

    The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate). The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. It was found that for laser fluences up to 1.5 J/cm 2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm 2 the polyepichlorohydrin films present deviations from the bulk polymer. Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm 2). The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material. The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.

  17. Temperature effect on elastic modulus of thin films and nanocrystals

    Science.gov (United States)

    Liang, Lihong; Li, Meizhi; Qin, Fuqi; Wei, Yueguang

    2013-02-01

    The stability of nanoscale devices is directly related to elasticity and the effect of temperature on the elasticity of thin films and nanocrystals. The elastic instability induced by rising temperature will cause the failure of integrated circuits and other microelectronic devices in service. The temperature effect on the elastic modulus of thin films and nanocrystals is unclear although the temperature dependence of the modulus of bulk materials has been studied for over half a century. In this paper, a theoretical model of the temperature-dependent elastic modulus of thin films and nanocrystals is developed based on the physical definition of the modulus by considering the size effect of the related cohesive energy and the thermal expansion coefficient. Moreover, the temperature effect on the modulus of Cu thin films is simulated by the molecular dynamics method. The results indicate that the elastic modulus decreases with increasing temperature and the rate of the modulus decrease increases with reducing thickness of thin films. The theoretical predictions based on the model are consistent with the results of computational simulations, semi-continuum calculations and the experimental measurements for Cu, Si thin films and Pd nanocrystals.

  18. Determination of Selected Material Properties of Castable Thin Film Polyimides for Applications in Solar Thermal Propulsion

    Science.gov (United States)

    Paxton, James P.

    1994-04-01

    Partial contents; This Study will, WHat is a thin film?, An application of Thin Film polyimides, Typical Solar Thermal Rocket Configuration, Benefits of 6FDA +APB Thin Films, Design Parameters for Articles constructed with thin film polyimides, theory, thin film test apparatus, unlaxial test appartus, toggle grip design, computer test panel, experimental procedure, Modulus of Elasticity results, Coefficient of Thermal Expansion results, Conclusions and Recommendations, Acknowledgement.

  19. Emergent topological phenomena in thin films of pyrochlore iridates.

    Science.gov (United States)

    Yang, Bohm-Jung; Nagaosa, Naoto

    2014-06-20

    Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

  20. Semiconducting properties of Al doped ZnO thin films.

    Science.gov (United States)

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  1. Electronegativity-dependent tin etching from thin films

    NARCIS (Netherlands)

    Pachecka, M.; Sturm, J.M.; Kruijs, van de R.W.E.; Lee, C.J.; Bijkerk, F.

    2016-01-01

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electron

  2. Characterization of thin films using generalized lamb wave dispersion relations

    OpenAIRE

    Richard, P; Behrend, O.; Gremaud, G.; Kulik, A.

    1993-01-01

    We used the Continuous Wave Scanning Acoustic Microscope to characterize thin film materials. The measurement of the dispersion curve of surface waves and the inversion of this dispersion equation relation, allow to determine the elastic constants, the density or the thickness of a thin layer on a substrate. Besides, it is possible to have qualitative information on the adhesion properties of the layer.

  3. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin...

  4. Front and backside processed thin film electronic devices

    Science.gov (United States)

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  5. The fabrication and characterization of double-gyroid and thin film photovoltaics

    Science.gov (United States)

    McCarthy, Robert F.

    Renewable energy can offer cleaner sources of electricity, and photovoltaics have perhaps the greatest potential due to the large quantity of solar power that hits the earth's surface. However, the cost of electricity from photovoltaics is still too high. There are two paths for reducing this cost, the first being cheaper manufacturing. Our research group explores this option by looking at Cu2ZnSn(S,Se)4 (CZTSSe) thin film devices deposited by nanocrystal inks, which use earth abundant materials, and can be made using cheap deposition processes. The second path is increasing solar cell efficiency. We've explored this route using double-gyroid (DG) nanostructure devices that should be capable of multiple exciton generation (MEG), a kind of photophysics that allows for increased photocurrent and device efficiency. Electrical characterization of our thin film devices shows a back contact barrier of 75 meV exists in our CIGSe device. CZTSSe devices have a defect level at 57 meV above its valence band, most likely due to a copper on zinc antisite. This defect acts as the main acceptor state. The device's series resistance increases drastically with decreasing temperature. Interestingly, this correlates with increasing photoluminescence at an energy of 1.5 eV, correlating with a trap state in the CdS layer of the device. These results suggest that the CdS layer could be the source of increasing series resistance with temperature. With DG research, electrodeposited lead selenide was improved using new applied potential techniques and additives in solution, leading to less roughness and greater surface coverage. Bulk PbSe devices showed very nice diode behavior. CdSe and CdTe films were also electrodeposited, and films were improved by optimizing post-deposition techniques to make bulk CdTe devices with efficiencies over 4%. With DG films, an increased band gap was measured in DG PbS (0.11 eV increase) and CdSe films (0.05-0.14 eV increase), indicating quantum confinement

  6. Reorientation of magnetic anisotropy in epitaxial cobalt ferrite thin films

    NARCIS (Netherlands)

    Lisfi, A.; Williams, C.M.; Nguyen, L.T.; Lodder, J.C.; Coleman, A.; Corcoran, H.; Johnson, A.; Chang, P.; Kumar, A.; Morgan, W.

    2007-01-01

    Spin reorientation has been observed in CoFe2O4 thin single crystalline films epitaxially grown on (100) MgO substrate upon varying the film thickness. The critical thickness for such a spin-reorientation transition was estimated to be 300 nm. The reorientation is driven by a structural transition

  7. Magnetic properties of electrodeposited Co-W thin films

    NARCIS (Netherlands)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.

    1987-01-01

    Thin films of Co-W, 300-500 Å thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a v

  8. Unusual strain relaxation in Cu thin films on Ni(001)

    DEFF Research Database (Denmark)

    Rasmussen, F.B.; Baker, J.; Nielsen, M.;

    1997-01-01

    Surface x-ray diffraction has been used to study the growth of thin Cu films on Ni(001). We give direct evidence for the formation of embedded wedges with internal {111} facets in the film, as recently suggested by Muller et al. [Phys. Rev. Lett. 76, 2358 (1996)]. The unusual strain distribution...

  9. Studies to Enhance Superconductivity in Thin Film Carbon

    Science.gov (United States)

    Pierce, Benjamin; Brunke, Lyle; Burke, Jack; Vier, David; Steckl, Andrew; Haugan, Timothy

    2012-02-01

    With research in the area of superconductivity growing, it is no surprise that new efforts are being made to induce superconductivity or increase transition temperatures (Tc) in carbon given its many allotropic forms. Promising results have been published for boron doping in diamond films, and phosphorus doping in highly oriented pyrolytic graphite (HOPG) films show hints of superconductivity.. Following these examples in the literature, we have begun studies to explore superconductivity in thin film carbon samples doped with different elements. Carbon thin films are prepared by pulsed laser deposition (PLD) on amorphous SiO2/Si and single-crystal substrates. Doping is achieved by depositing from (C1-xMx) single-targets with M = B4C and BN, and also by ion implantation into pure-carbon films. Previous research had indicated that Boron in HOPG did not elicit superconducting properties, but we aim to explore that also in thin film carbon and see if there needs to be a higher doping in the sample if trends were able to be seen in diamond films. Higher onset temperatures, Tc , and current densities, Jc, are hoped to be achieved with doping of the thin film carbon with different elements.

  10. A hysteresis model for an orthogonal thin-film magnetometer

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1990-01-01

    The operation of a ferromagnetic thin-film magnetometer using the anisotropic magnetoresistance effect in a permalloy film is discussed. Measurements showed the presence of a hysteresis effect not predicted by available models. It is shown that the sensitivity of the magnetometer is predicted by app

  11. Homogenization studies for optical sensors based on sculptured thin films

    OpenAIRE

    Jamaian, Siti Suhana

    2013-01-01

    In this thesis we investigate theoretically various types of sculptured thin film (STF) envisioned as platforms for optical sensing. A STF consists of an array of parallel nanowires which can be grown on a substrate using vapour deposition techniques. Typically, each nanowire has a diameter in the range from ~ 10-300 nmwhile the film thickness is ~

  12. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    G V Kunte; Ujwala Ail; S A Shivashankar; A M Umarji

    2005-06-01

    Thin films of a hydrated phase of tungsten oxide, viz. hydrotungstite, have been prepared on glass substrates by dip-coating method using ammonium tungstate precursor solution. X-ray diffraction shows the films to have a strong -axis orientation. The resistance of the films is observed to be sensitive to the humidity content of the ambient, indicating possible applications of these films for humidity sensing. A homemade apparatus designed to measure the d.c. electrical resistance in response to exposure to controlled pulses of a sensing gas has been employed to evaluate the sensitivity of the hydrotungstite films towards humidity.

  13. Buckling modes of elastic thin films on elastic substrates

    Science.gov (United States)

    Mei, Haixia; Huang, Rui; Chung, Jun Young; Stafford, Christopher M.; Yu, Hong-Hui

    2007-04-01

    Two buckling modes have been observed in thin films: buckle delamination and wrinkling. This letter identifies the conditions for selecting the favored buckling modes for elastic films on elastic substrates. Transition from one buckling mode to another is predicted as the stiffness ratio between the substrate and the film or is predicted for variation of the stiffness ratio between the substrate and the film or variation of theinterfacial defect size. The theoretical results are demonstrated experimentally by observing the coexistence of both buckling modes and mode transition in one film-substrate system.

  14. Ultrahydrophobicity of Polydimethylsiloxanes-Based Multilayered Thin Films

    Directory of Open Access Journals (Sweden)

    Hongyan Gao

    2009-01-01

    Full Text Available The formation of polydimethylsiloxanes (PDMSs-based layer-by-layer multilayer ultrathin films on charged surfaces prepared from water and phosphate buffer solutions has been investigated. The multilayer films prepared under these conditions showed different surface roughness. Nanoscale islands and network structures were observed homogeneously on the multilayer film prepared from pure water solutions, which is attributing to the ultrahydrobic property of the multilayer film. The formation of nanoscale islands and network structures was due to the aggregation of PDMS-based polyelectrolytes in water. This work provides a facile approach for generating ultrahydrophobic thin films on any charged surfaces by PDMS polyelectrolytes.

  15. ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsoutsouva, M.G. [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Panagopoulos, C.N., E-mail: chpanag@metal.ntua.gr [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Papadimitriou, D. [National Technical University of Athens, Department of Physics, GR-15780 Athens (Greece); Fasaki, I.; Kompitsas, M. [Theor. and Phys./Chem. Institute, National Hellenic Research Foundation, 48 Vas. Konstantinou Ave., 11635 Athens (Greece)

    2011-04-15

    Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality polycrystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 deg. C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.

  16. Fabrication of hierarchically ordered crystalline titania thin films

    Energy Technology Data Exchange (ETDEWEB)

    Niedermeier, Martin; Kaune, Gunar; Rawolle, Monika; Koerstgens, Volker; Ruderer, Matthias; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department LS E13, Garching (Germany); Gutmann, Jochen S. [Max-Planck Institute for Polymer Research, Mainz (Germany)

    2010-07-01

    Thin films of nanostructured titania have received a lot of attention in various applications such as photovoltaics within the last years. Having a well defined morphology is crucial for the functionality and performance of these films because it defines the volume to surface ratio and thereby the surface being available for interface reactions. Increasing the total film thickness is a common approach in order to increase the surface area. The present work focuses on the fabrication of hierarchically structured titania thin films and their crystallinity. A layer-by-layer spin-coating approach is investigated. A solution based sol-gel process using diblock copolymers as a template to obtain nanocomposite films is followed by calcination to obtain crystalline titania structures. The obtained structures are investigated using several imaging techniques like SEM and AFM. The crystallinity and the thickness of the films are analyzed with XRD and XRR.

  17. Synthesis and characterization of cerium sulfide thin film

    Institute of Scientific and Technical Information of China (English)

    Ιshak Afsin Kariper

    2014-01-01

    Cerium sulfide (CexSy) polycrystalline thin film is coated with chemical bath deposition on substrates (commercial glass). Transmittance, absorption, optical band gap and refractive index are examined by using UV/VIS. Spectrum. The hexagonal form is observed in the structural properties in XRD. The structural and optical properties of cerium sulfide thin films are analyzed at different pH. SEM and EDX analyses are made for surface analysis and elemental ratio in films. It is observed that some properties of films changed with different pH values. In this study, the focus is on the observed changes in the properties of films. The pH values were scanned at 6–10. The optical band gap changed with pH between 3.40 to 3.60 eV. In addition, the film thickness changed with pH at 411 nm to 880 nm.

  18. Impact of X-ray irradiation on PMMA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Saman, E-mail: saman.khan343@gmail.com [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Rafique, Muhammad Shahid [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Anjum, Safia [Physics Department, Lahore College for Woman University, Lahore (Pakistan); Hayat, Asma [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Iqbal, Nida [Faculty of Biomedical Engineering and Health Science, Universiti Teknologi Malaysia (UTM) (Malaysia)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer PMMA thin films were deposited at 300 Degree-Sign C and 500 Degree-Sign C using PLD technique. Black-Right-Pointing-Pointer These films were irradiated with different fluence of laser produced X-rays. Black-Right-Pointing-Pointer Irradiation affects the ordered packing as well as surface morphology of film. Black-Right-Pointing-Pointer Hardness of film decreases up to certain value of X-ray fluence. Black-Right-Pointing-Pointer Absorption in UV-visible range exhibits a non linear behavior. - Abstract: The objective of this project is to explore the effect of X-ray irradiation of thin polymeric films deposited at various substrate temperatures. pulsed laser deposition (PLD) technique is used for the deposition of PMMA thin films on glass substrate at 300 Degree-Sign C and 500 Degree-Sign C. These films have been irradiated with various X-rays fluences ranging from 2.56 to 5.76 mJ cm{sup -2}. Characterization of the films (before and after the irradiation) is done with help of X-ray Diffractrometer, Optical Microscope, Vickers hardness tester and UV-vis spectroscopy techniques. From XRD data, it is revealed that ordered packing has been improved for the films deposited at 300 Degree-Sign C. However after irradiation the films exhibited the amorphous behavior regardless of the X-ray fluence. Film deposited at 500 Degree-Sign C shows amorphous structure before and after irradiation. Hardness and particle size of thin film have also increased with the increasing substrate temperature. However, the irradiation has reverse effect i.e. the particle size as well as the hardness has reduced. Irradiation has also enhanced the absorption in the UV-visible region.

  19. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    Pradip Kr Kalita; B K Sarma; H L Das

    2000-08-01

    Thermally evaporated ZnSe thin films deposited on glass substrates within substrate temperatures (s) at 303 K–623 K are of polycrystalline nature having f.c.c. zincblende structure. The most preferential orientation is along [111] direction for all deposited films together with other abundant planes [220] and [311]. The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of preferred orientation in the film are calculated and correlated with s.

  20. Photonic thin film fabrication and characterization for display applications

    Science.gov (United States)

    Sun, Xiaowei

    In this thesis, the fabrication and characterization of various kinds of thin films useful for display applications are discussed. The fabrication technique used was mainly pulsed laser deposition, sputtering was also used to fabricate ITO films on glass. In-situ resistance measurement was used to characterize the initial growth of ITO thin films on glass. It was found that at a growth temperature of 150°C or above, ITO grows via a 2D layer by layer growth mechanism with a conductive critical thickness of about one lattice constant. With the growth temperature of less than 150°C, the films grow via a 3D growth mode. The growth mode transition also coincides with the amorphous to poly transition. In this thesis, a novel pulsed laser deposition technique called liquid target pulsed laser deposition was reported. It was used to fabricate GaN thin films from a gallium liquid. Liquid target pulsed laser deposition, to a certain extent, overcomes the target deterioration, target rotation, and splashing problems compared to traditional solid target pulsed laser deposition. Reasonably good crystal quality GaN thin films were fabricated on various substrates of quartz, silicon, and sapphire with a thin layer of ZnO buffer. Epitaxially grown GaN films were fabricated on ZnO buffered sapphire at an elevated substrate temperature. We studied the optical properties of epitaxially grown ZnO thin film on sapphire by photoluminescence measurement and variable angle spectroscopic ellipsometry. The bandgap, at room temperature and at 10K, and the refractive index of ZnO on sapphire were obtained. Phosphor thin film is an important topic in display application for color representation. In this thesis, we report the fabrication of red, green and blue primary color silicate phosphor thin films on silicon and silicon dioxide covered silicon substrates by pulsed laser deposition. By annealing at 800°C--1000°C, reasonably good purity red, green and blue photoluminescence were obtained

  1. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  2. Synthesis of CdSe Quantum Dots Using Fusarium oxysporum

    Directory of Open Access Journals (Sweden)

    Takaaki Yamaguchi

    2016-10-01

    Full Text Available CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were precipitated in the intracellular space, indicating that cadmium and selenium ions were incorporated into the cell and that the quantum dots were synthesized with intracellular metabolites. To reveal differences in F. oxysporum metabolism, cell extracts of F. oxysporum, before and after CdSe synthesis, were compared using sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE. The results suggested that the amount of superoxide dismutase (SOD decreased after CdSe synthesis. Fluorescence microscopy revealed that cytoplasmic superoxide increased significantly after CdSe synthesis. The accumulation of superoxide may increase the expression of various metabolites that play a role in reducing Se4+ to Se2− and inhibit the aggregation of CdSe to make nanoparticles.

  3. Visualization of latent fingerprints using Prussian blue thin films

    Institute of Scientific and Technical Information of China (English)

    Gang Qin; Mei-Qin Zhang; Yang Zhang; Yu Zhu; Shou-Liang Liu; Wen-Jin Wu; Xue-Ji Zhang

    2013-01-01

    Herein,a facile and effective approach was proposed for visualizing latent fingerprints (LFPs) on two kinds of conductive surfaces by spatially selective electrochemical deposition of Prussian blue (PB) thin films.This strategy exploited the fingerprint residue as an insulating mask and the PB thin films were only generated on the bare surface including the valleys between the papillary ridges,which produced a negative image of LFPs with high resolution up to the third level information.The surface morphology of PB films was characterized by the field emission scanning electron microscopy (FE-SEM).This enhancement technique showed promising performance in selected materials of practical interest.

  4. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  5. High light transmission through thin absorptive corrugated films.

    Science.gov (United States)

    Dmitruk, Nicolas L; Korovin, Alexander V

    2008-05-01

    The enhancement of light transmittance through periodically relief thin absorptive film at surface plasmon polariton excitation conditions, as a function of relief interrelation, was considered theoretically. Our calculation of transmittance-reflectance through periodically relief thin absorptive film was performed in the framework of differential formalism. There are two basic relief interrelation forms, namely, correlated and anticorrelated ones. The obtained spectral and angular dependencies demonstrate an essential increase of surface plasmon polariton peaks in the case of anticorrelated corrugation of film in comparison with the correlated ones.

  6. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  7. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR

    Directory of Open Access Journals (Sweden)

    Ventsislav Yantchev

    2011-07-01

    Full Text Available The mass sensitivity of thin aluminum nitride (AlN film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  8. Thin films growth parameters in MAPLE; application to fibrinogen

    Energy Technology Data Exchange (ETDEWEB)

    Jelinek, M [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Cristescu, R [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Kocourek, T [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Vorlicek, V [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Remsa, J [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Stamatin, L [Longhin Scarlat Dermato-Venerologic Hospital, Bucharest (Romania); Mihaiescu, D [University of Agriculture Sciences and Veterinary Medicine, 59 Marasti, Bucharest (Romania); Stamatin, I [University of Bucharest, Faculty of Physics, PO Box MG-11, 3Nano-SAE, Bucharest-Magurele (Romania); Mihailescu, I N [National Institute for Laser, Plasma and Radiation Physics, MG-36, RO-77125, Bucharest (Romania); Chrisey, D B [Naval Research Laboratory, Code 6851 Washington, DC 20375 (United States)

    2007-04-15

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported.

  9. Effects of humidity during photoprocessing on thin film metallization adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Norwood, D.P.

    1980-03-01

    Humidity effects during photoprocessing on tantalum/chromium/gold thin film networks (TFNs) were investigated. Humidity conditions at various process steps were controlled by placing either desiccant or water in handling containers for the TFNs. The TFNs photoprocessed in humid conditions had a much higher occurrence of metallization failures compared to TFNs processed in dry conditions. Ceramic surface defects were shown to cause pores in the thin films, and these pores enhanced corrosion susceptibility for the films. This study resulted in a desiccated storage process for production of TFNs.

  10. Anomalous Structure of Palladium-Capped Magnesium Thin Films

    Directory of Open Access Journals (Sweden)

    Kazuki Yoshimura

    2012-07-01

    Full Text Available Pd capped pure Mg thin film (50 nm thick was prepared by magnetron sputtering and its hydrogenation at room temperature has been investigated. After exposure to 4% hydrogen gas diluted by argon, the Pd/Mg thin films show drastic optical changes from the metallic state to the transparent state within five seconds by hydrogenation. Transmission electron microscope observation reveals that this sample has an anomalous structure; Mg grain is surrounded by Pd. This structure may be the reason why Pd/Mg films can be hydrogenated so quickly at room temperature.

  11. Synthesis of thin films by the pyrosol process

    Directory of Open Access Journals (Sweden)

    Tucić Aleksandar

    2002-01-01

    Full Text Available Among many aerosol routes, the Pyrosol process, due to its simplicity, low cost and quality of obtained films, represents a promising technique for the synthesis of thin films. The pyrosol process is based on the transport and pyrolysls of an aerosol of processor solution, generated in an ultrasonic atomizer, on a heated substrate. The theoretical principles of the pyrosol process are presented in this paper, as well as the influence of some synthesis parameters on the deposition of SnO2 thin films.

  12. Resistance switching induced by electric fields in manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Villafuerte, M [Facultad de Ciencias Exactas y TecnologIa, Universidad Nacional de Tucuman, S. M. de Tucuman (Argentina); Juarez, G [Facultad de Ciencias Exactas y TecnologIa, Universidad Nacional de Tucuman, S. M. de Tucuman (Argentina); Duhalde, S [Dpto de Fisica, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Golmar, F [Dpto de Fisica, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Degreef, C L [Dpto de Fisica, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Heluani, S P [Facultad de Ciencias Exactas y TecnologIa, Universidad Nacional de Tucuman, S. M. de Tucuman (Argentina)

    2007-04-15

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of {sub 0.5}Ca{sub 0.5}MnO{sub 3} (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results.

  13. Quantification of low levels of fluorine content in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ferrer, F.J., E-mail: fjferrer@us.es [Centro Nacional de Aceleradores (CSIC - Univ. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Gil-Rostra, J.; Terriza, A. [Instituto de Ciencia de Materiales (CSIC - Univ. Sevilla), Americo Vespucio 49, E-41092 Sevilla (Spain); Rey, G.; Jimenez, C. [Laboratoire des Materiaux et du Genie Physique-UMR 5628-INPGrenoble-Minatec 3, parvis Louis Neel, BP 257, 38016 Grenoble Cedex 1 (France); Garcia-Lopez, J. [Centro Nacional de Aceleradores (CSIC - Univ. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Yubero, F. [Instituto de Ciencia de Materiales (CSIC - Univ. Sevilla), Americo Vespucio 49, E-41092 Sevilla (Spain)

    2012-03-01

    Fluorine quantification in thin film samples containing different amounts of fluorine atoms was accomplished by combining proton-Rutherford Backscattering Spectrometry (p-RBS) and proton induced gamma-ray emission (PIGE) using proton beams of 1550 and 2330 keV for p-RBS and PIGE measurements, respectively. The capabilities of the proposed quantification method are illustrated with examples of the analysis of a series of samples of fluorine-doped tin oxides, fluorinated silica, and fluorinated diamond-like carbon films. It is shown that this procedure allows the quantification of F contents as low as 1 at.% in thin films with thicknesses in the 100-400 nm range.

  14. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D.; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented. PMID:22163994

  15. Highly mass-sensitive thin film plate acoustic resonators (FPAR).

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  16. Microscale mechanics for metal thin film delamination along ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    魏悦广

    2000-01-01

    The metal thin film delamination along metal/ceramic interface in the case of large scale yielding is studied by employing the strain gradient plasticity theory and the material microscale effects are considered. Two different f racture process models are used in this study to describe the nonlinear delamination phenomena for metal thin films. A set of experiments have been done on the mechanism of copper films delaminating from silica substrates, based on which the peak interface separation stress and the micro-length scale of material, as well as the dislocation-free zone size are predicted.

  17. Microscale mechanics for metal thin film delamination along ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The metal thin film delamination along metal/ceramic interface in the case of large scale yielding is studied by employing the strain gradient plasticity theory and the material microscale effects are considered.Two different fracture process models are used in this study to describe the nonlinear delamination phenomena for metal thin films.A set of experiments have been done on the mechanism of copper films delaminating from silica substrates,based on which the peak interface separation stress and the micro-length scale of material,as well as the dislocation-free zone size are predicted.

  18. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  19. Cathodoluminescence study of thin films of high Tc superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Barkay, Z.; Azoulay, J.; Lereah, Y.; Dai, U.; Hess, N.; Racah, D.; Gruenbaum, E.; Deutscher, G. (School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, 69978 Ramat Aviv (Israel))

    1990-10-22

    Cathodoluminescence (CL) of thin films of high {ital T}{sub {ital c}} superconductors was studied in the scanning electron microscope. The depth and the lateral locations of the different phases can be revealed. In thin films, unlike the bulk superconductors, the CL information can be obtained either from the film itself or the substrate by varying the primary beam energy. At high beam energy, substrate defects and slight thickness variations of a single high {ital T}{sub {ital c}} phase are observed. The resolution of the CL measurements improves at low temperatures.

  20. Cell adhesion to cathodic arc plasma deposited CrAlSiN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sun Kyu, E-mail: skim@ulsan.ac.kr [School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Pham, Vuong-Hung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Kim, Chong-Hyun [Department of Food Science, Cornell University, Ithaca, NY 14853 (United States)

    2012-07-01

    Osteoblast cell response (cell adhesion, actin cytoskeleton and focal contact adhesion as well as cell proliferation) to CrN, CrAlSiN and Ti thin films was evaluated in vitro. Cell adhesion and actin stress fibers organization depended on the film composition significantly. Immunofluorescent staining of vinculin in osteoblast cells showed good focal contact adhesion on the CrAlSiN and Ti thin films but not on the CrN thin films. Cell proliferation was significantly greater on the CrAlSiN thin films as well as on Ti thin films than on the CrN thin films.

  1. Characterization of Sucrose Thin Films for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    S. L. Iconaru

    2011-01-01

    Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

  2. Nanostructured thin films for icephobic applications

    Science.gov (United States)

    Noormohammed, Saleema

    Icing on surfaces such as cables or high voltage insulators often leads to severe safety issues such as power outages in cold winter conditions. Conventional methods used to avoid such icing problems include mechanical deicing where the ice is scraped or broken and chemical deicing where deicers such as ethylene glycol are used. These methods have their own disadvantages of being destructive, expensive and time consuming. A better approach would be to prevent ice from forming in the first place by producing coating materials that are icephobic. Superhydrophobic surfaces, which demonstrate high water-repellency due to the negligible contact area of water with those surfaces, are also expected to minimize the contact area of ice. A low dielectric constant surface is also expected to reduce the adhesion of ice due to the screening of mirror charges, thereby eliminating one of the strongest interaction forces---the electrostatic forces of attraction at the ice-surface interface. In the present research work, both concepts were studied by producing superhydrophobic nanorough low-epsilon dielectric surfaces on aluminum or alumina substrates. Superhydrophobic properties were achieved on surfaces of aluminum or alumina by creating a certain nanoroughness using chemical methods followed by a low surface energy coating of rf-sputtered Teflon or fluoroalkyl-silane (FAS-17) providing a water contact angle greater than 160°. The same behavior is reported even when the nanorough substrates were coated with dielectric thin films of ZnO (lower epsilon) or TiO 2, (higher epsilon). It is found that the superhydrophobic nanorough low surface energy surfaces are also icephobic and the presence of a low dielectric constant surface coating of Teflon (lowest epsilon; epsilon = 2) allows a considerable reduction of the ice adhesion strength even on non-nanotextured surfaces where ice would stick. The superhydrophobic nanorough low-epsilon surfaces also demonstrate morphological and

  3. Modeling the buckling and delamination of thin films

    Science.gov (United States)

    Jagla, E. A.

    2007-02-01

    I study numerically the problem of delamination of a thin film elastically attached to a rigid substrate. A nominally flat elastic thin film is modeled using a two-dimensional triangular mesh. Both compression and bending rigidities are included to simulate compression and bending of the film. The film can buckle (i.e., abandon its flat configuration) when enough compressive strain is applied. The buckled configurations of a piece of film with stripe geometry are investigated as a function of the compressive strain. It is found that the stable configuration depends strongly on the applied strain and the Poisson ratio of the film. Next, the film is considered to be attached to a rigid substrate by springs that can break when the detaching force exceeds a threshold value, producing partial delamination of the film. Delamination is induced by a mismatch of the relaxed configurations of film and substrate. The morphology of the delaminated film can be followed and compared with available experimental results as a function of model parameters. “Telephone-cord,” polygonal, and “brainlike” patterns qualitatively similar to experimentally observed configurations are obtained in different parameter regions. The main control parameters that select the different patterns are the strain mismatch between film and substrate and the degree of in-plane relaxation within the unbuckled regions.

  4. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  5. Thin Film Ceramic Strain Sensor Development for High Temperature Environments

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M.; Laster, Kimala L.

    2008-01-01

    The need for sensors to operate in harsh environments is illustrated by the need for measurements in the turbine engine hot section. The degradation and damage that develops over time in hot section components can lead to catastrophic failure. At present, the degradation processes that occur in the harsh hot section environment are poorly characterized, which hinders development of more durable components, and since it is so difficult to model turbine blade temperatures, strains, etc, actual measurements are needed. The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in harsh environments. The effort at the NASA Glenn Research Center (GRC) to develop high temperature thin film ceramic static strain gauges for application in turbine engines is described, first in the fan and compressor modules, and then in the hot section. The near-term goal of this research effort was to identify candidate thin film ceramic sensor materials and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. A thorough literature search was conducted for ceramics that have the potential for application as high temperature thin film strain gauges chemically and physically compatible with the NASA GRCs microfabrication procedures and substrate materials. Test results are given for tantalum, titanium and zirconium-based nitride and oxynitride ceramic films.

  6. Stress-warping relation in thin film coated wafers

    Science.gov (United States)

    Schicker, J.; Khan, W. A.; Arnold, T.; Hirschl, C.

    2017-02-01

    A misfit strain or stress in a thin layer on the surface of a wafer lets the composite disk warp. When the wafer is thin and large, the Stoney estimation of the film stress as function of the curvature yields large errors. We present a nonlinear analytical model that describes the relationship between warpage and film stress on an anisotropic wafer, and give evidence for its suitability for large thin wafers by a comparison to finite element results. Finally, we show the confidence limit of the Stoney estimation and the benefit by the nonlinear model. For thin coatings, it can be succesfully used even without knowledge of the film properties, which was the main advantage of the Stoney estimation.

  7. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  8. Thin-film rechargeable lithium batteries for implantable devices

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.b.; Dudney, N.J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  9. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  10. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    Science.gov (United States)

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  11. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  12. Photoexcited Carrier Dynamics of Cu2S Thin Films.

    Science.gov (United States)

    Riha, Shannon C; Schaller, Richard D; Gosztola, David J; Wiederrecht, Gary P; Martinson, Alex B F

    2014-11-20

    Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this Letter, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deduced from the spectral evolution from 300 fs to 300 μs. Revealing the effects of grain morphology on the photophysical properties of Cu2S is a crucial step toward reaching high efficiencies in operationally stable Cu2S thin film photovoltaics.

  13. Recent Developments in High-Temperature Shape Memory Thin Films

    Science.gov (United States)

    Motemani, Y.; Buenconsejo, P. J. S.; Ludwig, A.

    2015-11-01

    High-temperature shape memory alloy (HTSMA) thin films are candidates for development of microactuators with operating temperatures exceeding 100 °C. This article reviews recent advances and developments in the field of HTSMA thin films during the past decade, with focus on the systems Ti-Ni-X (X = Hf, Zr, Pd, Pt and Au), Ti-Ta, and Au-Cu-Al. These actuator films offer a wide range of transformation temperatures, thermal hysteresis, and recoverable strains suitable for high-temperature applications. Promising alloy compositions in the systems Ti-Ni-Hf, Ti-Ni-Pd, Ti-Ni-Au, and Au-Cu-Al are highlighted for further upscaling and development. The remaining challenges as well as prospects for development of HTSMA thin films are also discussed.

  14. Thermal conductivity measurement of thin films by a dc method.

    Science.gov (United States)

    Yang, Junyou; Zhang, Jiansheng; Zhang, Hui; Zhu, Yunfeng

    2010-11-01

    A dc method, which needs no complex numerical calculation and expensive hardware configuration, was developed to measure the cross-plane thermal conductivity of thin films in this paper. Two parallel metallic heaters, which were deposited on different parts of the sample, serve simultaneously as the heaters and temperature sensors during the measurement. A direct current was flowed through the same two metallic strips to heat the thin-film sample. The heating power and the heater's temperature were obtained by a data acquisition device, and the thermal conductivity of thin film was calculated. To verify the validity of the dc method, several SiO(2) films with different thicknesses were deposited on Si wafers, respectively, and their thermal conductivities were measured by both the dc method and 3ω method. The results of two methods are in good agreement within an acceptable error, and they are also inconsistent with some of previously published data.

  15. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Science.gov (United States)

    Carlier, Thibault; Saitzek, Sébastien; Méar, François O.; Blach, Jean-François; Ferri, Anthony; Huvé, Marielle; Montagne, Lionel

    2017-03-01

    In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  16. Micromechanical characterization of ALD thin films

    OpenAIRE

    Berdova, Maria

    2015-01-01

    Atomic layer deposited (ALD) films have become essential for various microelectromechanical systems (MEMS) due to their excellent properties: ALD films are conformal, uniform, dense, and pin-hole free. The main requirement for any film to be applied in MEMS is to exhibit good mechanical properties. Good mechanical properties mean that film has low residual stress, high fracture and interfacial strengths, and known elastic properties under applied mechanical load. MEMS devices are often subjec...

  17. Preparation of iron cobaltite thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Le Trong, H. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Ho Chi Minh City University of Science, Vietnam National University Ho Chi Minh City, 227 Nguyen Van Cu Q 5, 750000 Ho Chi Minh City (Viet Nam); Bui, T.M.A. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Presmanes, L., E-mail: presmane@chimie.ups-tlse.fr [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Barnabé, A.; Pasquet, I.; Bonningue, C.; Tailhades, Ph. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France)

    2015-08-31

    Iron cobaltite thin films with spinel structure have been elaborated by radio-frequency (RF) magnetron sputtering from a Co{sub 1.75}Fe{sub 1.25}O{sub 4} target. Influence of argon pressure on structure, microstructure and physical properties of films has been examined. Iron–cobalt oxide thin films essentially consist of one spinel phase when deposited at low pressure (0.5 and 1.0 Pa). At high pressure (2.0 Pa), the global stoichiometry of the film is changed which results in the precipitation of a mixed monoxide of cobalt and iron beside the spinel phase. This in-situ reduction due to an oxygen loss occurring mainly at high deposition pressure has been revealed by X-ray diffraction and Raman spectroscopy. Microstructural evolution of thin film with argon pressure has been shown by microscopic observations (AFM and SEM). The evolution of magnetic and electrical properties, versus argon pressure, has been also studied by SQUID and 4 point probe measurements. - Highlights: • Co{sub 1.75}Fe{sub 1.25}O{sub 4} phase is obtained at room temperature without any annealing. • This phase is a ferrimagnetic semiconductor with a coercive field of 32 kOe at 5 K. • Oxygen content of the thin film is related to the argon pressure during sputtering. • Monoxide phase grows into the film at high argon pressure. • Magnetic coupling effect reveals nanoscale impurities at low argon pressure.

  18. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  19. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  20. A dynamic rheological model for thin-film lubrication

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiang-Jun; Huang Ying; Guo Yan-Bao; Tian Yu; Meng Yong-Gang

    2013-01-01

    In this study,the effects of the non-Newtonian rheological properties of the lubricant in a thin-film lubrication regime between smooth surfaces were investigated.The thin-film lubrication regime typically appears in Stribeck curves with a clearly observable minimum coefficient of friction (COF) and a low-COF region,which is desired for its lower energy dissipation.A dynamic rheology of the lubricant from the hydrodynamic lubrication regime to the thin-film lubrication regime was proposed based on the convected Maxwell constitutive equation.This rheology model includes the increased relaxation time and the yield stress of the confined lubricant thin film,as well as their dependences on the lubricant film thickness.The Deborah number (De number) was adopted to describe the liquid-solid transition of the confined lubricant thin film under shearing.Then a series of Stribeck curves were calculated based on Tichy's extended lubrication equations with a perturbation of the De number.The results show that the minimum COF points in the Stribeck curve correspond to a critical De number of 1.0,indicating a liquid-to-solid transition of the confined lubricant film.Furthermore,the two proposed parameters in the dynamic rheological model,namely negative slipping length b (indicating the lubricant interfacial effect) and the characteristic relaxation time λ0,were found to determine the minimum COF and the width of the low-COF region,both of which were required to optimize the shape of the Stribeck curve.The developed dynamic rheological model interprets the correlation between the rheological and interfacial properties of lubricant and its lubrication behavior in the thin-film regime.

  1. A photoluminescence study of film structure in CdTe nanoparticle thin films.

    Science.gov (United States)

    Gardner, H C; Gallardo, D E; Dunn, S; Gaponik, N; Eychmüller, A

    2008-05-01

    The layer-by-layer deposition of thin films of CdTe nanoparticles and three different polyelectrolytes has been investigated. Photoluminescence spectra were used to monitor the energy transfer properties within the films. As the number of bilayers in a thin film was increased a decrease in the energy of the light emitted was observed. The wavelength change is a two-stage process. Deposition of the first one to two bi-layers of a thin film produced a sharp energy change (626 nm to 637 nm with the addition of a single bi-layer) whereas deposition of subsequent bi-layers produced a more gradual energy change (642 nm-646 nm with the addition of 5 bi-layers). A space-filling mechanism is suggested to account for these changes; smaller nanoparticles penetrate the earlier levels of a thin film and increase the inter-particle energy transfer opportunities within the layers.

  2. Polyethylene terephthalate thin films; a luminescence study

    Science.gov (United States)

    Carmona-Téllez, S.; Alarcón-Flores, G.; Meza-Rocha, A.; Zaleta-Alejandre, E.; Aguilar-Futis, M.; Murrieta S, H.; Falcony, C.

    2015-04-01

    Polyethylene Terephthalate (PET) films doped with Rare Earths (RE3+) have been deposited on glass by spray pyrolysis technique at 240 °C, using recycled PET and (RE3+) chlorides as precursors. Cerium, terbium, dysprosium and europium were used as dopants materials, these dopants normally produce luminescent emissions at 450, 545, 573 and 612 nm respectively; the doped films also have light emissions at blue, green, yellow and red respectively. All RE3+ characteristic emissions were observed at naked eyes. Every deposited films show a high transmission in the visible range (close 80% T), films surfaces are pretty soft and homogeneous. Films thickness is around 3 μm.

  3. Towards an optimum design for thin film phase plates

    Energy Technology Data Exchange (ETDEWEB)

    Rhinow, Daniel, E-mail: daniel.rhinow@biophys.mpg.de

    2016-01-15

    A variety of physical phase plate designs have been developed to maximize phase contrast for weak phase objects in the transmission electron microscope (TEM). Most progress towards application in structural biology has been made with Zernike PPs consisting of a ~30 nm film of amorphous carbon with a central hole. Although problems such as beam-induced deterioration of Zernike PPs remain unsolved, it is likely that thin film phase plates will be applied routinely in TEM of ice-embedded biological specimens in the near future. However, the thick carbon film of thin film PPs dampens high-resolution information, which precludes their use for single-particle electron cryo-microscopy at atomic resolution. In this work, an improved design for a thin film phase plate is proposed, combining the advantages of Zernike PPs and 2D materials, such as graphene. The improved design features a disc of phase-shifting material mounted on an ultrathin support film. The proposed device imparts a phase shift only to electrons scattered to low angles, whereas contrast at high resolution is generated by conventional defocusing. The device maximizes phase contrast at low spatial frequencies, where defocus contrast is limiting, while damping of information at high spatial frequencies is avoided. Experiments demonstrate that the fabrication of such a device is feasible. - Highlights: • Thin film phase plates enable in-focus TEM imaging of biological specimens. • The thick amorphous carbon film causes damping of high-resolution information. • New thin film phase plate design imparts phase shift only to low spatial frequencies. • Improved design holds promise to facilitate cryo-EM of single particles.

  4. Sol-gel preparation of silica and titania thin films

    Science.gov (United States)

    Thoř, Tomáš; Václavík, Jan

    2016-11-01

    Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

  5. Thin film tin oxide-based propane gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Carbajal-Franco, G.; Tiburcio-Silver, A. [Inst. Tecnologico de Toluca, Metepec (Mexico); Dominguez, J.M. [Instituto Mexicano del Petroleo, Apdo. postal 14-805, 07730, D. F., Mexico (Mexico); Sanchez-Juarez, A. [CIE-UNAM, Apdo. postal 34, 62580, Temixco (Mexico)

    2000-09-03

    In this work, we report on the elaboration of SnO{sub 2} and SnO{sub 2}:Ag thin films ({proportional_to}200 nm in thickness) obtained by heat-treatment in oxygen of Sn and Sn:Ag thin films deposited by vacuum evaporation on alumina substrates. A simple and very cheap procedure was used to dope the SnO{sub 2} films with Ag. Preliminary results on the sensing properties of these films are presented. Films are able to detect selectively the presence of C{sub 3}H{sub 8} in the LP-gas domestic mixture. Doping with Ag allows reductions in the optimal operation temperature of the SnO{sub 2} sensors by 100 C. This a very important result when detecting such a highly explosive gas. (orig.)

  6. Dynamic buckling behavior of thin metal film lines from substrate

    Science.gov (United States)

    Wu, Dan; Xie, Huimin; Wang, Heling; Zhang, Jie; Li, Chuanwei

    2014-10-01

    The dynamic buckling behavior of thin films from substrate is studied in this work. The experimental results show that the buckling morphology of the constantan film lines from the polymer substrate is inconsistent and non-sinusoidal, which is different from the sinusoidal form of the buckling morphology under static loads. The plastic deformation of the film lines results in the non-sinusoidal buckling morphology and residual deformation when unloaded. Finite element modeling results with regard to the plastic dissipation of the constantan film lines reveal that the plastic dissipation suppresses the buckling-driven delaminating under impact loads. This study will give some new perspectives on the buckling behavior of thin film from substrate.

  7. Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jun, E-mail: lijun_yt@163.com [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Huang, Chuan-Xin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Jian-Hua, E-mail: jhzhang@staff.shu.edu.cn [Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Zhu, Wen-Qing; Jiang, Xue-Yin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Zhi-Lin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)

    2015-08-15

    Graphical abstract: This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process. - Highlights: • No reports about BaZnSnO thin film using solution process. • BaZnSnO thin film transistor (TFT) was firstly fabricated. • BaZnSnO-TFT shows a acceptable performace. • Influence of Ba content on BaZnSnO-TFT. - Abstract: A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Ba is obtained, showing a saturation mobility of 1.94 cm{sup 2}/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 10{sup 6}, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices.

  8. Growth of oxide thin films for optical gas sensor applications

    Energy Technology Data Exchange (ETDEWEB)

    Caiteanu, D. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Gyoergy, E. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania)]. E-mail: eniko@ifin.nipne.ro; Grigorescu, S. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Mihailescu, I.N. [Lasers Department, Institute of Atomic Physics, P.O. Box MG 36, 76900 Bucharest V (Romania); Prodan, G. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania); Ciupina, V. [University ' Ovidius' of Constanta, Mamaia Bd., 124, Constanta 900527 (Romania)

    2006-04-30

    Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* ({lambda} = 248 nm, {tau} {sub FWHM} {approx_equal} 20 ns, {nu} = 2 Hz) excimer laser source, at 2 J/cm{sup 2} incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO{sub 2} substrates were heated during the thin film deposition process at temperature values within the 300-500 deg. Crange. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 deg. Care crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.

  9. YSZ thin films with minimized grain boundary resistivity

    Energy Technology Data Exchange (ETDEWEB)

    Mills, Edmund M.; Kleine-Boymann, Matthias; Janek, Juergen; Yang, Hao; Browning, Nigel D.; Takamura, Yayoi; Kim, Sangtae

    2016-03-31

    In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e. g. strain-induced mobility changes) at the heterophase boundary with the substrate. Still largely unexplored is the possibility of manipulation of grain boundary resistivity in polycrystalline solid electrolyte films, clearly a limiting factor in their ionic conductivity. Here we report that the ionic conductivity of yttria stabilized zirconia thin films with nano-­ columnar grains grown on a MgO substrate nearly reaches that of the corresponding single crystal when the thickness of the films becomes less than roughly 8 nm (smaller by a factor of three at 500°C). Using impedance spectroscopy, the grain boundary resistivity was probed as a function of film thickness. The resistivity of the grain boundaries near the film- substrate interface and film surface (within 4 nm of each) was almost entirely eliminated. This minimization of grain boundary resistivity is attributed to Mg2+ diffusion from the MgO substrate into the YSZ grain boundaries, which is supported by time of flight secondary ion mass spectroscopy measurements. We suggest grain boundary “design” as an attractive method to obtain highly conductive solid electrolyte thin films.

  10. Characterization of fully functional spray-on antibody thin films

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, Jhon [Department of Chemistry, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620-5250 (United States); Magaña, Sonia; Lim, Daniel V. [Department of Cell Biology, Microbiology and Molecular Biology, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620-7115 (United States); Schlaf, Rudy, E-mail: schlaf@eng.usf.edu [Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620-5101 (United States)

    2014-02-15

    The authors recently demonstrated that fully functional Escherichia coli O157:H7 antibody thin films can be prepared using a simple pneumatic nebulizer on glass surface [1]. This paper focuses on the investigation of the morphology and physical properties of these films with the aim to better understand their performance. A series of E. coli O157:H7 antibody spray-on thin films were investigated by ellipsometry, X-ray photoelectron spectroscopy (XPS), immunoassays, attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), fluorescence microscopy, atomic force microscope (AFM) and contact angle analysis. These data were compared to measurements on films prepared with the biotin–avidin covalent bonding scheme. The investigation showed that films created by a 2 min pneumatic spray deposition time can capture antigens similar as the avidin–biotin wet-chemical method. The results also suggests that an influential factor for the comparable capture cell ability between sprayed and covalent films is an increased antibody surface coverage for the sprayed films (non-equilibrium technique), which compensates for the lack of its antibody orientation. There was no significant antibody denaturation detected on any of the sprayed films. Both techniques led to the formation of cluster-aggregates, a factor that seems unavoidable due to the natural tendency of protein to cluster. The avidin–biotin bridge films generally had a higher roughness, which manifested itself in a higher wettability compared to the sprayed films.

  11. Properties of photoelectricity of WOx-doped ITO thin films

    Science.gov (United States)

    Liu, Ye; Li, Zhuying; Wang, Chong; Liu, Hui; Luo, Shan

    2010-10-01

    Indium-tin-oxide (ITO) film is an n-semiconductor transparent conductive film. It has many good properties: conductivity, transmittance in visible region, absorptivity in ultraviolet. And tungsten oxide has good conductivity and it can keep stable structure in high temperature, also it has wearable and anti-corrupt properties. Therefore, tungsten oxide can be added gradually on ITO thin films by magnetron sputtering to research the optical and electrical performance of the doped films. We research the performance of the doped films in five aspects: X-ray diffraction spectroscopy, Scanning electron microscope are used to investigate the crystal structure, surface morphology. UV-visible spectroscopy is used to display the transmittance and absorption spectrum of the films. The thin films' performance of electrochemistry is tested by the workstation of electrochemistry. Its conductivity is tested by Four-probe sheet resistivity meter. The main conclusion: The analysis of SEM results shows that the surface morphology of the films is granulated. Transmittance spectrums suggest that the transmittance of ITO films have been increased by proper doping, the percentage of transmittance is over 90% from visible to near-infrared region. Besides, it shows well in the properties of electricity and electrochemistry in the doped films.

  12. Reactively sputtered titanium carbide thin films: Preparation and properties

    Science.gov (United States)

    Eizenberg, M.; Murarka, S. P.

    1983-06-01

    The low resistivity and refractory nature of titanium carbide makes it potentially useful as a diffusion barrier in thin film metallization schemes. In the present investigation, deposition and properties of thin titanium carbide films have been investigated. The films were deposited by reactive radio frequency sputtering in methane-argon mixtures on a variety of substrates. The effects of methane to argon ratio, total sputtering pressure, and power on the film deposition rate, composition and properties were determined. There were interactive effects of these parameters on the composition and properties of these films. Resistivity increased with carbon content; for Ti/C≥1 it was ˜200 μΩ cm. Stress that was compressive was maximum in the nearly stoichiometric TiC film. Grain size was small in all films, especially so in carbon rich films. All stoichiometric titanium carbide films were resistant to HF solutions. Films with TiC/≥1 dissolved easily in ethylene dinitrilo tetra acetric acid (EDTA) solution.

  13. Surface Morphology of Annealed Lead Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    P.Kalugasalam,

    2010-06-01

    Full Text Available The thin films of Lead Phthalocyanine (PbPc on glass substrates were prepared by Vacuum deposition. The thickness of the films was 450 nm. The sample annealed in high vacuum at 373 K temperature. The sample has been analysed by X-ray diffraction, scanning electron microscopy and atomic force microscopy in order to get structural and surface morphology of the PbPc thin film. The formation of XRD patterns of PbPc shows a triclinic grains (T seen along with monoclinic (M forms of PbPc. The sample is annealed at 373 K temperatures; the film shows peaks that assigned to the triclinic phase. SEM and AFM are the best tools to investigate the surface smoothness and to find the grain size of the particles. The grain size is calculated for all films of different thicknesses. The annealed AFM micrograph shows that the surface of the films consists of large holes. The annealed AFM image indicates a smooth surface. It is very clear that the grain size decreases with increase in the annealing temperature. The roughness also decreases with the increase in film annealing temperature. Annealed film leads to the oxidation of the hthalocyanine with oxygen absorbed or diffused. Therefore, the heat is responsible for the increase in film thickness. Since the films expand, it is believed that the porosity is increased.

  14. Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

    KAUST Repository

    Yave, Wilfredo

    2010-09-01

    Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

  15. Hydrophobic plasma polymerized hexamethyldisilazane thin films: characterization and uses

    Directory of Open Access Journals (Sweden)

    Alexsander Tressino de Carvalho

    2006-03-01

    Full Text Available Hexametildisilazane (HMDS plasma polymerized thin films obtained using low frequency power supplies can be used to make adsorbent films and turn surfaces hydrophobic. The aim of this work was to verify the hydrophobicity and adsorption properties of HMDS thin films (with and without the addition of oxygen, resulting in double or single layer films obtained using an inductive reactor powered with a 13.56 MHz power supply. Single and double layer thin films were deposited on silicon for film characterization, polypropylene (PP for ultraviolet (UVA/UVC resistance tests, piezoelectric quartz crystal for adsorption tests. The double layer (intermixing of HMDS plasma polymerized films and HMDS plasma oxidized surfaces showed a non-continuous layer. The films showed good adhesion to all substrates. Infrared analysis showed the presence of CHn, SiCH3, SiNSi and SiCH2Si within the films. Contact angle measurements with water showed hydrophobic surfaces. UVA/UVC exposure of the films resulted in the presence of cross-linking on carbonic radicals and SiCH2Si formation, which resulted in a possible protection of PP against UVA/UVC for a duration of up to two weeks. Adsorption tests showed that all organic reactants were adsorbed but not water. Plasma etching (PE using O2 showed that even after 15 minutes of exposure the films do not change their hydrophobic characteristic but were oxidized. The results point out that HMDS films can be used: for ultraviolet protection of flexible organic substrates, such as PP, for sensor and/or preconcentrator development, due to their adsorption properties, and in spatial applications due to resistance for O2 attack in hostile conditions, such as plasma etching.

  16. Evaluation of therapeutic pulmonary surfactants by thin liquid film methods.

    Science.gov (United States)

    Todorov, Roumen; Exerowa, Dotchi; Platikanov, Dimo; Bianco, Federico; Razzetti, Roberta

    2015-08-01

    An example of the application of the Black Foam Film (BFF) Method and the Wetting Film Method, using the Microinterferomertric and the Pressure Balance Techniques, for characterization interfacial properties of the animal derived therapeutic pulmonary surfactant preparations (TSP), is presented. BFF thickness, probability of black film formation, and disjoining pressure for foam films from TSP aqueous solutions are measured as well as the wetting properties of TSP solutions on solid surfaces with different hydrophobicity have been studied. Interfacial characteristics such as minimal surfactant concentration to obtain black film (critical concentration) and concentration at which a black film is 100% obtained (threshold concentration) are determined. An evaluation of the four widely used TSP – Curosurf, Infasurf, Survanta, and Alveofact – by these methods has been carried out. Thus the methods of the thin liquid films are useful tools for studying the interfacial properties of TSP solutions, as well as for their improvement.

  17. Laser-induced vibration of a thin soap film.

    Science.gov (United States)

    Emile, Olivier; Emile, Janine

    2014-09-21

    We report on the vibration of a thin soap film based on the optical radiation pressure force. The modulated low power laser induces a counter gravity flow in a vertical free-standing draining film. The thickness of the soap film is then higher in the upper region than in the lower region of the film. Moreover, the lifetime of the film is dramatically increased by a factor of 2. Since the laser beam only acts mechanically on the film interfaces, such a film can be employed in an optofluidic diaphragm pump, the interfaces behaving like a vibrating membrane and the liquid in-between being the fluid to be pumped. Such a pump could then be used in delicate micro-equipment, in chips where temperature variations are detrimental and even in biological systems.

  18. Polycaprolactone thin films for retinal tissue engineering and drug delivery

    Science.gov (United States)

    Steedman, Mark Rory

    This dissertation focuses on the development of polycaprolactone thin films for retinal tissue engineering and drug delivery. We combined these thin films with techniques such as micro and nanofabrication to develop treatments for age-related macular degeneration (AMD), a disease that leads to the death of rod and cone photoreceptors. Current treatments are only able to slow or limit the progression of the disease, and photoreceptors cannot be regenerated or replaced by the body once lost. The first experiments presented focus on a potential treatment for AMD after photoreceptor death has occurred. We developed a polymer thin film scaffold technology to deliver retinal progenitor cells (RPCs) to the affected area of the eye. Earlier research showed that RPCs destined to become photoreceptors are capable of incorporating into a degenerated retina. In our experiments, we showed that RPC attachment to a micro-welled polycaprolactone (PCL) thin film surface enhanced the differentiation of these cells toward a photoreceptor fate. We then used our PCL thin films to develop a drug delivery device capable of sustained therapeutic release over a multi-month period that would maintain an effective concentration of the drug in the eye and eliminate the need for repeated intraocular injections. We first investigated the biocompatibility of PCL in the rabbit eye. We injected PCL thin films into the anterior chamber or vitreous cavity of rabbit eyes and monitored the animals for up to 6 months. We found that PCL thin films were well tolerated in the rabbit eye, showing no signs of chronic inflammation due to the implant. We then developed a multilayered thin film device containing a microporous membrane. We loaded these devices with lyophilized proteins and quantified drug elution for 10 weeks, finding that both bovine serum albumin and immunoglobulin G elute from these devices with zero order release kinetics. These experiments demonstrate that PCL is an extremely useful

  19. YBCO thin film evaporation on as-deposited silver film on MgO

    Science.gov (United States)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  20. Thermochemical hydrogen generation of indium oxide thin films

    Science.gov (United States)

    Lim, Taekyung; Ju, Sanghyun

    2017-03-01

    Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD) and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.