The influence of CdS intermediate layer on CdSe/CdS co-sensitized free-standing TiO2 nanotube solar cells

Science.gov (United States)

Ren, Xuefeng; Yu, Libo; Li, Zhen; Song, Hai; Wang, Qingyun

2018-01-01

We build CdSe quantum dots (QDs) sensitized TiO2 NT solar cells (CdSe/TiO2 solar cells) by successive ionic layer adsorption reaction (SILAR) method on free-standing translucent TiO2 nanotube (NT) film. The best power conversion efficiency (PCE) 0.74% is obtained with CdSe/TiO2 NT solar cells, however, it is very low. Hence, we introduced the CdS QDs layer located between CdSe QDs and TiO2 NT to achieve an enhanced photovoltaic performance. The J-V test results indicated that the insert of CdS intermediate layer yield a significant improvement of PCE to 2.52%. Combining experimental and theoretical analysis, we find that the effects caused by a translucent TiO2 nanotube film, a better lattices match between CdS and TiO2, and a new formed stepwise band edges structure not only improve the light harvesting efficiency but also increase the driving force of electrons, leading to the improvement of photovoltaic performance.

Co-sensitization of quantum dot sensitized solar cells composed of TiO2 nanocrystalline photoanode with CdS and PbS nanoparticles and effect of PbS on the performance of solar cell

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Maziar Marandi

2017-09-01

Full Text Available In this research, CdS and PbS quantum dots were applied as the light sensitizers in TiO2 based nanostructured solar cells. The PbS quantum dots could absorb a wide range of the sunlight spectrum on earth due to their low bandgap energy. As a result, the cell sensitization is more effective by application of both CdS and PbS quantum dots sensitizers. The TiO2 nanocrystals were synthesized through a hydrothermal process and deposited on FTO glass substrates as the photoanode scaffold. Then PbS quantum dots were grown on the surface of this nanocrystalline layer by a successive ionic layer adsorption and reaction (SILAR method. The CdS quantum dots were over-grown in the next step through a similar deposition method. Finally this sensitized layer was applied as the photoelectrode of the corresponding quantum dot sensitized solar cells. The results demonstrated that the maximum efficiency was achieved for the cell with a photoanode made of co-sensitization through 2 and 6 cycles of PbS and CdS deposition, respectively. The photovoltaic parameters of this cell were measured as Jsc of 10.81 mA/cm2, Voc of 590 mv and energy conversion efficiency of 2.7+0.2%.

Effect of sodium acetate additive in successive ionic layer adsorption and reaction on the performance of CdS quantum-dot-sensitized solar cells

Science.gov (United States)

Liu, I.-Ping; Chen, Liang-Yih; Lee, Yuh-Lang

2016-09-01

Sodium acetate (NaAc) is utilized as an additive in cationic precursors of the successive ionic layer adsorption and reaction (SILAR) process to fabricate CdS quantum-dot (QD)-sensitized photoelectrodes. The effects of the NaAc concentration on the deposition rate and distribution of QDs in mesoporous TiO2 films, as well as on the performance of CdS-sensitized solar cells are studied. The experimental results show that the presence of NaAc can significantly accelerate the deposition of CdS, improve the QD distribution across photoelectrodes, and thereby, increase the performance of solar cells. These results are mainly attributed to the pH-elevation effect of NaAc to the cationic precursors which increases the electrostatic interaction of the TiO2 film to cadmium ions. The light-to-energy conversion efficiency of the CdS-sensitized solar cell increases with increasing concentration of the NaAc and approaches a maximum value (3.11%) at 0.05 M NaAc. Additionally, an ionic exchange is carried out on the photoelectrode to transform the deposited CdS into CdS1-xSex ternary QDs. The light-absorption range of the photoelectrode is extended and an exceptional power conversion efficiency of 4.51% is achieved due to this treatment.

Effects of Self-Assembled Monolayers on Solid-State CdS Quantum Dot Sensitized Solar Cells

KAUST Repository

Ardalan, Pendar; Brennan, Thomas P.; Lee, Han-Bo-Ram; Bakke, Jonathan R.; Ding, I-Kang; McGehee, Michael D.; Bent, Stacey F.

2011-01-01

Quantum dot sensitized solar cells (QDSSCs) are of interest for solar energy conversion because of their tunable band gap and promise of stable, low-cost performance. We have investigated the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs. CdS quantum dots ∼2 to ∼6 nm in diameter were grown on SAM-passivated planar or nanostructured TiO 2 surfaces by successive ionic layer adsorption and reaction (SILAR), and photovoltaic devices were fabricated with spiro-OMeTAD as the solid-state hole conductor. X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet-visible spectroscopy, scanning electron microscopy, transmission electron microscopy, water contact angle measurements, ellipsometry, and electrical measurements were employed to characterize the materials and the resulting device performance. The data indicate that the nature of the SAM tailgroup does not significantly affect the uptake of CdS quantum dots on TiO2 nor their optical properties, but the presence of the SAM does have a significant effect on the photovoltaic device performance. Interestingly, we observe up to ∼3 times higher power conversion efficiencies in devices with a SAM compared to those without the SAM. © 2011 American Chemical Society.

Effects of Self-Assembled Monolayers on Solid-State CdS Quantum Dot Sensitized Solar Cells

KAUST Repository

Ardalan, Pendar

2011-02-22

Quantum dot sensitized solar cells (QDSSCs) are of interest for solar energy conversion because of their tunable band gap and promise of stable, low-cost performance. We have investigated the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs. CdS quantum dots ∼2 to ∼6 nm in diameter were grown on SAM-passivated planar or nanostructured TiO 2 surfaces by successive ionic layer adsorption and reaction (SILAR), and photovoltaic devices were fabricated with spiro-OMeTAD as the solid-state hole conductor. X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet-visible spectroscopy, scanning electron microscopy, transmission electron microscopy, water contact angle measurements, ellipsometry, and electrical measurements were employed to characterize the materials and the resulting device performance. The data indicate that the nature of the SAM tailgroup does not significantly affect the uptake of CdS quantum dots on TiO2 nor their optical properties, but the presence of the SAM does have a significant effect on the photovoltaic device performance. Interestingly, we observe up to ∼3 times higher power conversion efficiencies in devices with a SAM compared to those without the SAM. © 2011 American Chemical Society.

Enhanced photovoltaic performance of quantum dot-sensitized solar cells with a progressive reduction of recombination using Cu-doped CdS quantum dots

International Nuclear Information System (INIS)

Muthalif, Mohammed Panthakkal Abdul; Lee, Young-Seok; Sunesh, Chozhidakath Damodharan; Kim, Hee-Je; Choe, Youngson

2017-01-01

Highlights: • Cu-doped CdS QDs were deposited on TiO_2 by SILAR method. • Cu-doped CdS electrodes contributes reduction of charge recombination and longer electron lifetime. • A promising power conversion efficiency of 3% is obtained for the Cu-doped CdS Quantum dot sensitized solar cell. - Abstract: In this article, we have systematically probed the effect of Cu-doping in CdS quantum dots (QDs) to enhance the photovoltaic performance of the quantum dot-sensitized solar cells (QDSSCs). The Cu-doped CdS photoanodes were prepared by successive ionic layer adsorption and reaction (SILAR) method and the corresponding cell devices were fabricated using CuS counter electrodes with a polysulfide electrolyte. The photovoltaic performance results demonstrate that 3 mM Cu-doped CdS QDs based QDSSCs exhibit the efficiency (η) of 3% including J_S_C = 9.40 mA cm"−"2, V_O_C = 0.637 V, FF = 0.501, which are higher than those with bare CdS (η = 2.05%, J_S_C = 7.12 mA cm"−"2, V_O_C = 0.588 V, FF = 0.489). The structural, topographical and optical properties of the thin films have been studied with the help of X-ray diffraction pattern (XRD), atomic force microscopy (AFM) and UV–vis spectrophotometer. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) measurements indicate that Cu-dopant can inhibit the charge recombination at the photoanode/electrolyte interface and extend the lifetime of electrons. These results reveal that incorporation of copper metal in CdS QDs is a simple and effective method to improve the photovoltaic properties of QDSSCs.

Enhanced photovoltaic performance of quantum dot-sensitized solar cells with a progressive reduction of recombination using Cu-doped CdS quantum dots

Energy Technology Data Exchange (ETDEWEB)

Muthalif, Mohammed Panthakkal Abdul [Department of Polymer Science and Chemical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 609-735 (Korea, Republic of); Lee, Young-Seok [School of Electrical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 609-735 (Korea, Republic of); Sunesh, Chozhidakath Damodharan [Department of Polymer Science and Chemical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 609-735 (Korea, Republic of); Kim, Hee-Je [School of Electrical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 609-735 (Korea, Republic of); Choe, Youngson, E-mail: choe@pusan.ac.kr [Department of Polymer Science and Chemical Engineering, Pusan National University, Geumjeong-Ku, Jangjeong-Dong, Busan 609-735 (Korea, Republic of)

2017-02-28

Highlights: • Cu-doped CdS QDs were deposited on TiO{sub 2} by SILAR method. • Cu-doped CdS electrodes contributes reduction of charge recombination and longer electron lifetime. • A promising power conversion efficiency of 3% is obtained for the Cu-doped CdS Quantum dot sensitized solar cell. - Abstract: In this article, we have systematically probed the effect of Cu-doping in CdS quantum dots (QDs) to enhance the photovoltaic performance of the quantum dot-sensitized solar cells (QDSSCs). The Cu-doped CdS photoanodes were prepared by successive ionic layer adsorption and reaction (SILAR) method and the corresponding cell devices were fabricated using CuS counter electrodes with a polysulfide electrolyte. The photovoltaic performance results demonstrate that 3 mM Cu-doped CdS QDs based QDSSCs exhibit the efficiency (η) of 3% including J{sub SC} = 9.40 mA cm{sup −2}, V{sub OC} = 0.637 V, FF = 0.501, which are higher than those with bare CdS (η = 2.05%, J{sub SC} = 7.12 mA cm{sup −2}, V{sub OC} = 0.588 V, FF = 0.489). The structural, topographical and optical properties of the thin films have been studied with the help of X-ray diffraction pattern (XRD), atomic force microscopy (AFM) and UV–vis spectrophotometer. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) measurements indicate that Cu-dopant can inhibit the charge recombination at the photoanode/electrolyte interface and extend the lifetime of electrons. These results reveal that incorporation of copper metal in CdS QDs is a simple and effective method to improve the photovoltaic properties of QDSSCs.

Photovoltaic and Impedance Spectroscopy Study of Screen-Printed TiO2 Based CdS Quantum Dot Sensitized Solar Cells

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M. Atif

2015-01-01

Full Text Available Cadmium sulphide (CdS quantum dot sensitized solar cells (QDSSCs based on screen-printed TiO2 were assembled using a screen-printing technique. The CdS quantum dots (QDs were grown by using the Successive Ionic Layer Adsorption and Reaction (SILAR method. The optical properties were studied by UV-Vis absorbance spectroscopy. Photovoltaic characteristics and impedance spectroscopic measurements of CdS QDSSCs were carried out under air mass 1.5 illuminations. The experimental results of capacitance against voltage indicate a trend from positive to negative capacitance because of the injection of electrons from the Fluorine doped tin oxide (FTO electrode into TiO2.

Photovoltaic and impedance characteristics of modified SILAR grown CdS quantum dot sensitized solar cell

International Nuclear Information System (INIS)

Fatehmulla, Amanullah; Farooq, W. A.; Aslam, M.; Atif, M.; Ali, S.M.; Al-Dhafir, A. M.; Yakuphanoglu, F.; Yahia, I.S.

2014-01-01

Cadmium Sulphide (CdS) quantum dots (QDs) were deposited on nanostructured TiO 2 film using a modified Successive Ionic Layer Adsorption and Reaction (SILAR) method. Nanostructured TiO 2 on FTO glass and Platinum on FTO are used as photoelectrode and Counter electrode respectively. High resolution Transmission Electron Microscopy (HRT EM) image revealed CdS QDs adsorbed on nanostructured TiO 2 . The photovoltaic characteristics and impedance spectroscopy properties of CdS quantum dot sensitized solar cell (QDSSC) were analyzed under air mass 1.5 illuminations. At the SILAR adsorption time of 2 min (10 cycles), the QDSSC measured a short circuit current density of 2 mA/cm 2 and an open circuit voltage of 0.45 V under air mass 1.5. In a widespread frequency range, the capacitance – voltage, the conductance – voltage, the series resistance - voltage measurements were carried out for the QDSSC applications. A conduct of positive to negative capacitance was observed from the measured characteristics of capacitance - voltage which is attributed to the injection of electrons from FTO electrode into TiO 2 . Key words: Nanostructured TiO 2 , CdS QDSSC, SILAR method, photovoltaic measurements, impedance characteristic

Performances of some low-cost counter electrode materials in CdS and CdSe quantum dot-sensitized solar cells.

Science.gov (United States)

Jun, Hieng Kiat; Careem, Mohamed Abdul; Arof, Abdul Kariem

2014-02-10

Different counter electrode (CE) materials based on carbon and Cu2S were prepared for the application in CdS and CdSe quantum dot-sensitized solar cells (QDSSCs). The CEs were prepared using low-cost and facile methods. Platinum was used as the reference CE material to compare the performances of the other materials. While carbon-based materials produced the best solar cell performance in CdS QDSSCs, platinum and Cu2S were superior in CdSe QDSSCs. Different CE materials have different performance in the two types of QDSSCs employed due to the different type of sensitizers and composition of polysulfide electrolytes used. The poor performance of QDSSCs with some CE materials is largely due to the lower photocurrent density and open-circuit voltage. The electrochemical impedance spectroscopy performed on the cells showed that the poor-performing QDSSCs had higher charge-transfer resistances and CPE values at their CE/electrolyte interfaces.

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

Science.gov (United States)

Böer, Karl W.

2016-10-01

The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are

OPTOELECTRONIC PROPERTIES OF CdS – AgInS2 SOLAR CELLS

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M. A. Abdullaev

2016-01-01

Full Text Available Aim. To conduct experimental studies of optoelectronic properties of CdS - AgInS2 solar cells.Methods. AgInS2 films for solar cell CdS-AgInS2 were obtained by magnetron sputtering of crystalline targets derived from bulk ingots. Cadmium sulfide layers were deposited on the AgInS2 films by an electrochemical method in cadmium salts solution, thiourea and ammonia. AgInS2 bulk crystals were obtained in two stages: a direct fusion of the primary components (99,999 in a stoichiometric ratio, followed by directional solidification in a vertical furnace; re-synthesis has been performed on a staggered basis by heating the obtained ingots at temperatures close to the melting points of elements in the two-zone horizontal furnace.Findings. The paper presents the results of experimental studies of the electrical properties and photosensitivity of CdS-AgInS2 film heterojunction obtained by the magnetron. We measured the current-voltage characteristics and quantum efficiency of photoconversion at temperatures up to 250-356 K. We also identified the short circuit current of up to 25 mA/cm2 and open circuit voltage of 0.38 V.Conclusions. The study of the properties of solar cells in recent years has an important place. The results presented in the work would contribute to more efficient conversion of solar energy into electricity.

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

International Nuclear Information System (INIS)

Nazir, Adnan; Toma, Andrea; Shah, Nazar Abbas; Panaro, Simone; Butt, Sajid; Sagar, Rizwan ur Rehman; Raja, Waseem; Rasool, Kamran; Maqsood, Asghari

2014-01-01

Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10 6 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10 3 Ω cm) against a 20% cut in optical transmission

Effect of photoanode surface coverage by a sensitizer on the photovoltaic performance of titania based CdS quantum dot sensitized solar cells.

Science.gov (United States)

Prasad, Rajendra M B; Pathan, Habib M

2016-04-08

In spite of the promising design and architecture, quantum dot sensitized solar cells (QDSSCs) have a long way to go before they attain the actual projected photoconversion efficiencies. Such an inferior performance displayed by QDSSCs is primarily because of many unwanted recombination losses of charge carriers at various interfaces of the cell. Electron recombination due to back electron transfer at the photoanode/electrolyte interface is an important one that needs to be addressed, to improve the efficiency of these third generation nanostructured solar cells. The present work highlights the importance of conformal coverage of CdS quantum dots (QDs) on the surface of the nanocrystalline titania photoanode in arresting such recombinations, leading to improvement in the performance of the cells. Using the successive ionic layer adsorption and reaction (SILAR) process, photoanodes are subjected to different amounts of CdS QD sensitization by varying the number of cycles of deposition. The sensitized electrodes are characterized using UV-visible spectroscopy, cyclic voltammetry and transmission electron microscopy to evaluate the extent of surface coverage of titania electrodes by QDs. Sandwich solar cells are then fabricated using these electrodes and characterized employing electrochemical impedance spectroscopy and J-V characteristics. It is observed that maximum solar cell efficiency is obtained for photoanodes with conformal coating of QDs and any further deposition of sensitizer leads to QD aggregation and so reduces the performance of the solar cells.

Enhanced solar cell efficiency and stability using ZnS passivation layer for CdS quantum-dot sensitized actinomorphic hexagonal columnar ZnO

International Nuclear Information System (INIS)

Chen, Yanli; Tao, Qiang; Fu, Wuyou; Yang, Haibin; Zhou, Xiaoming; Zhang, Yanyan; Su, Shi; Wang, Peng; Li, Minghui

2014-01-01

Highlights: • The synthetic of ZnS/CdS QDs/AHC-ZnO photoanode with a simple method. • The power conversion efficiency of the ZnS/CdS QDs/AHC-ZnO is 1.81%. • The effects of photovoltaic performances caused by CdS and ZnS amounts were studied. • ZnS passivation layer enhanced electron lifetime significantly. - Abstract: We report the photoanodes consisting of CdS quantum-dots (QDs) sensitized actinomorphic hexagonal columnar ZnO (CdS QDs/AHC-ZnO) with ZnS passivation layer are applied for solar cells. Simple chemical solution synthesized AHC-ZnO films on transparent conducting glass substrates, and then, AHC-ZnO is functionalized with uniform CdS and ZnS QDs via successive ionic layer adsorption and reaction (SILAR) method. The as-prepared materials were characterized by XRD, SEM, TEM, UV–vis diffused reflectance absorption spectra and photovoltaic performances analysis. Photovoltaic performances results indicate the quantity of CdS QDs as well as the visible light absorption threshold can be effectively controlled by varying the coating cycles during the SILAR process, and the photocurrent density (Jsc) is greatly improved by increasing the amount of ZnS. By optimizing the AHC-ZnO with the amount of CdS and ZnS, the best efficiency of 1.81% was achieved for solar cell under AM 1.5 G illumination with Jsc = 7.44 mA/cm 2 , Voc = 0.57 V and FF = 43%

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells.

Science.gov (United States)

Werner, Melanie; Keller, Debora; Haass, Stefan G; Gretener, Christina; Bissig, Benjamin; Fuchs, Peter; La Mattina, Fabio; Erni, Rolf; Romanyuk, Yaroslav E; Tiwari, Ayodhya N

2015-06-10

Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Effect of the nature of cationic precursors for SILAR deposition on the performance of CdS and PbS/CdS quantum dot-sensitized solar cells

International Nuclear Information System (INIS)

Liu, Yingbo; Li, Zhen; Yu, Libo; Sun, Shuqing

2015-01-01

In this work, the influences of cationic precursors on the quality of photoelectrode, consequently on the performance of the quantum dot-sensitized solar cells (QDSCs) have been studied. CdS QDSCs have been prepared using successive ionic layer absorption and reaction (SILAR) method. Three cadmium precursors including nitrate (Cd(NO 3 ) 2 ), chloride (CdCl 2 ), and acetate (Cd(Ac) 2 ) were employed for the synthesis and absorption of CdS nanoparticles on nanostructure TiO 2 film. The loading amount and nanoparticle size of the CdS on mesoporous TiO 2 film showed a significant difference while using various cadmium precursors in the same SILAR cycles. Both the light-harvesting ability and the obtained incident photon-to-current conversion efficiency values show the trend of deposition rate caused by cadmium precursors. Further, it was proposed that an effective cationic precursor could provide a good connection between QD sensitizer and TiO 2 interface by electrochemical impedance spectroscopy analysis. Under AM 1.5 G full one sun illumination, the final power conversion efficiency of CdS QDSC based on Cd(Ac) 2 was 2.10 %, and PCE values of 1.57 and 1.20 % were obtained for solar cells sensitized by CdS QDs prepared by CdCl 2 and Cd(NO 3 ) 2 , respectively. The cationic precursor effect was further applied in PbS/CdS co-sensitized solar cells. The PbS/CdS QDSCs based on acetate cationic precursors provide a photocurrent of 19.24 mA/cm 2 and PCE of 3.23 % in comparison with 11.26 mA and 2.13 % obtained with nitrate acetate salts. Noticeably, the CdS and PbS/CdS QDSCs based on various cationic precursors prepared by SILAR exhibited good photocurrent stability under several light on–off cycles

Preparation and photovoltaic properties of CdS quantum dot-sensitized solar cell based on zinc tin mixed metal oxides.

Science.gov (United States)

Cao, Jiupeng; Zhao, Yifan; Zhu, Yatong; Yang, Xiaoyu; Shi, Peng; Xiao, Hongdi; Du, Na; Hou, Wanguo; Qi, Genggeng; Liu, Jianqiang

2017-07-15

The present study reports a new type of quantum dot sensitized solar cells (QDSSCs) using the zinc tin mixed metal oxides (MMO) as the anode materials, which were obtained from the layered double hydroxide (LDH) precursor. The successive ionic layer adsorption and reaction (SILAR) method is applied to deposit CdS quantum dots. The effects of sensitizing cycles on the performance of CdS QDSSC are studied. Scanning electron microscopy (SEM), Transmission electron microscope (TEM) and X-ray diffraction (XRD) are used to identify the surface profile and crystal structure of the mixed metal oxides anode. The photovoltaic performance of the QDSSC is studied by the electrochemical method. The new CdS QDSSC exhibits power conversion efficiency (PCE) up to 0.48% when the anode was sensitized for eight cycles. Copyright © 2017 Elsevier Inc. All rights reserved.

Spin-coating deposition of PbS and CdS thin films for solar cell application

Energy Technology Data Exchange (ETDEWEB)

Patel, Jayesh; Mighri, Frej [Laval University, CREPEC, Department of Chemical Engineering, Quebec, QC (Canada); Ajji, Abdellah [Ecole Polytechnique, CREPEC, Chemical Engineering Department, Montreal, QC (Canada); Tiwari, Devendra; Chaudhuri, Tapas K. [Charotar University of Science and Technology (CHARUSAT), Dr. K.C. Patel Research and Development Centre, Anand District, Gujarat (India)

2014-12-15

In this work, we describe a simple spin-coating deposition technique for lead sulphide (PbS) and cadmium sulphide (CdS) films from a methanolic metal-thiourea complex. The characterization of the films by X-ray diffraction and X-ray photoelectron spectroscopy techniques revealed that pure cubic phase PbS and CdS layers were formed via this method. As shown by atomic force microscopy and scanning electron microscopy results, both films were homogeneous and presented a smooth surface. Optical properties showed that the energy band gap of PbS and CdS films were around 1.65 and 2.5 eV, respectively. The PbS film is p-type in nature with an electrical conductivity of around 0.8 S/cm. The hole concentration and mobility were 2.35 x 10{sup 18} cm{sup -3} and 2.16 x 10{sup -3} cm{sup 2}/V/s, respectively, as determined from Hall measurement. Both films were used to develop a thin film solar cell device of graphite/PbS/CdS/ITO/glass. Device characterization showed the power conversion efficiency of around 0.24 %. The corresponding open circuit voltage, short circuit current and fill factor were 0.570 V, 1.32 mA/cm{sup 2} and 0.32, respectively. (orig.)

Co-sensitization of ZnO by CdS quantum dots in natural dye-sensitized solar cells with polymeric electrolytes to improve the cell stability

Energy Technology Data Exchange (ETDEWEB)

Junhom, W.; Magaraphan, R. [Polymer Processing and Polymer Nanomaterials Research Unit, Petroleum and Petrochemical College, Chulalongkorn University, Bangkok (Thailand)

2015-05-22

The CdS quantum dots (QDs) were deposited on ZnO layer by chemical bath deposition method to absorb light in the shorter wavelength region and used as photoanode in the dye sensitized solar cell (DSSCs) with natural dye extracted from Noni leaves. Microstructures of CdS-ZnO from various dipping time were characterized by XRD, FE-SEM and EDX. The results showed that the CdS is hexagonal structure and the amount of CdS increases when the dipping time increases. The maximal conversion efficiency of 0.292% was achieved by the DSSCs based on CdS QDs-sensitized ZnO film obtained from 9 min-dipping time. Furthermore, the stability of DSSCs was improved by using polymeric electrolyte. Poly (acrylic acid) (PAA) and Polyacrylamide (PAM) were introduced to CdS QDs-sensitized ZnO film from 9 min-dipping time. Each polymeric electrolyte was prepared by swelling from 0.1-2.0 %w in H2O. The maximal conversion efficiency of 0.207% was achieved for DSSCs based on CdS QDs-sensitized ZnO film with PAM 1.0% and the conversion efficiency was decreased 25% when it was left for1 hr.

Atomic Layer Deposition of CdS Quantum Dots for Solid-State Quantum Dot Sensitized Solar Cells

KAUST Repository

Brennan, Thomas P.; Ardalan, Pendar; Lee, Han-Bo-Ram; Bakke, Jonathan R.; Ding, I-Kang; McGehee, Michael D.; Bent, Stacey F.

2011-01-01

Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO 2, we are able to grow QDs of adjustable size which act as sensitizers for solid-state QDsensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1-10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2',7,7'-tetrakis-(N,N-di-p methoxyphenylamine) 9,9'-spirobifluorene (spiro-OMeTAD) as the solid-state hole conductor. The ALD approach described here can be applied to fabrication of quantum-confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic Layer Deposition of CdS Quantum Dots for Solid-State Quantum Dot Sensitized Solar Cells

KAUST Repository

Brennan, Thomas P.

2011-10-04

Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO 2, we are able to grow QDs of adjustable size which act as sensitizers for solid-state QDsensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1-10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2\\',7,7\\'-tetrakis-(N,N-di-p methoxyphenylamine) 9,9\\'-spirobifluorene (spiro-OMeTAD) as the solid-state hole conductor. The ALD approach described here can be applied to fabrication of quantum-confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of the nature of cationic precursors for SILAR deposition on the performance of CdS and PbS/CdS quantum dot-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Yingbo; Li, Zhen; Yu, Libo; Sun, Shuqing, E-mail: sunshuqing@tju.edu.cn [Tianjin University, Department of Chemistry (China)

2015-03-15

In this work, the influences of cationic precursors on the quality of photoelectrode, consequently on the performance of the quantum dot-sensitized solar cells (QDSCs) have been studied. CdS QDSCs have been prepared using successive ionic layer absorption and reaction (SILAR) method. Three cadmium precursors including nitrate (Cd(NO{sub 3}){sub 2}), chloride (CdCl{sub 2}), and acetate (Cd(Ac){sub 2}) were employed for the synthesis and absorption of CdS nanoparticles on nanostructure TiO{sub 2} film. The loading amount and nanoparticle size of the CdS on mesoporous TiO{sub 2} film showed a significant difference while using various cadmium precursors in the same SILAR cycles. Both the light-harvesting ability and the obtained incident photon-to-current conversion efficiency values show the trend of deposition rate caused by cadmium precursors. Further, it was proposed that an effective cationic precursor could provide a good connection between QD sensitizer and TiO{sub 2} interface by electrochemical impedance spectroscopy analysis. Under AM 1.5 G full one sun illumination, the final power conversion efficiency of CdS QDSC based on Cd(Ac){sub 2} was 2.10 %, and PCE values of 1.57 and 1.20 % were obtained for solar cells sensitized by CdS QDs prepared by CdCl{sub 2} and Cd(NO{sub 3}){sub 2}, respectively. The cationic precursor effect was further applied in PbS/CdS co-sensitized solar cells. The PbS/CdS QDSCs based on acetate cationic precursors provide a photocurrent of 19.24 mA/cm{sup 2} and PCE of 3.23 % in comparison with 11.26 mA and 2.13 % obtained with nitrate acetate salts. Noticeably, the CdS and PbS/CdS QDSCs based on various cationic precursors prepared by SILAR exhibited good photocurrent stability under several light on–off cycles.

Enhanced photovoltaic performance of quantum dot-sensitized solar cells with a progressive reduction of recombination using Cu-doped CdS quantum dots

Science.gov (United States)

Muthalif, Mohammed Panthakkal Abdul; Lee, Young-Seok; Sunesh, Chozhidakath Damodharan; Kim, Hee-Je; Choe, Youngson

2017-02-01

In this article, we have systematically probed the effect of Cu-doping in CdS quantum dots (QDs) to enhance the photovoltaic performance of the quantum dot-sensitized solar cells (QDSSCs). The Cu-doped CdS photoanodes were prepared by successive ionic layer adsorption and reaction (SILAR) method and the corresponding cell devices were fabricated using CuS counter electrodes with a polysulfide electrolyte. The photovoltaic performance results demonstrate that 3 mM Cu-doped CdS QDs based QDSSCs exhibit the efficiency (η) of 3% including JSC = 9.40 mA cm-2, VOC = 0.637 V, FF = 0.501, which are higher than those with bare CdS (η = 2.05%, JSC = 7.12 mA cm-2, VOC = 0.588 V, FF = 0.489). The structural, topographical and optical properties of the thin films have been studied with the help of X-ray diffraction pattern (XRD), atomic force microscopy (AFM) and UV-vis spectrophotometer. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) measurements indicate that Cu-dopant can inhibit the charge recombination at the photoanode/electrolyte interface and extend the lifetime of electrons. These results reveal that incorporation of copper metal in CdS QDs is a simple and effective method to improve the photovoltaic properties of QDSSCs.

Deuterium markers in CdS and Zn(O,S) buffer layers deposited by solution growth for Cu(In,Ga)Se{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Witte, Wolfram; Eicke, Axel; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Souza, Roger A. de; Martin, Manfred [Institute of Physical Chemistry, RWTH Aachen University (Germany)

2017-12-15

This contribution describes an easy and cheap approach to introduce deuterium (D) as an isotopic marker into the commonly used buffer layer materials CdS and Zn(O,S) for Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells. D was successfully incorporated during the growth of Zn(O,S) and CdS buffer layers by chemical bath deposition (CBD) with D{sub 2}O. CIGS solar cells prepared with D-containing buffers grown by CBD exhibit power conversion efficiencies above 16%, that is, the D content has no detrimental effect on the performance or other solar cell parameters of the devices. With depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) we clearly detect the intentionally incorporated D within the solution-grown Zn(O,S) buffer. Assuming that D is present as OD, we compare the amount of OD within the Zn(O,S) layer with the amount of OH on the surface of the subsequent sputtered (Zn,Mg)O layer. Possible applications and future experiments of the method inserting isotopic markers such as D in functional layers of chalcopyrite-type thin-film solar cells and beyond are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Tuning band alignment by CdS layers using a SILAR method to enhance TiO2/CdS/CdSe quantum-dot solar-cell performance.

Science.gov (United States)

Zhang, Bingkai; Zheng, Jiaxin; Li, Xiaoning; Fang, Yanyan; Wang, Lin-Wang; Lin, Yuan; Pan, Feng

2016-04-28

We report tuning band alignment by optimized CdS layers using a SILAR method to achieve the recorded best performance with about 6% PCE in TiO2/CdS/CdSe QDSSCs. Combining experimental and theoretical studies, we find that a better lattices match between CdS and TiO2 assists the growth of CdSe, and the combined effect of charge transfer and surface dipole moment at the TiO2/CdS/CdSe interface shifts the energy levels of TiO2 upward and increases Voc of the solar cells. More importantly, the band gap of CdS buffer layers is sensitive to the distortion induced by lattice mismatch and numbers of CdS layers. For example, the barrier for charge transfer disappears when there are more than 4 layers of CdS, facilitating the charge injection from CdSe to TiO2.

Assembly of CdS Quantum Dots onto Hierarchical TiO2 Structure for Quantum Dots Sensitized Solar Cell Applications

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Syed Mansoor Ali

2015-05-01

Full Text Available Quantum dot (QD sensitized solar cells based on Hierarchical TiO2 structure (HTS consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate is fabricated. The hierarchical TiO2 structure consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate synthesized by hydrothermal route. The CdS quantum dots were grown by the successive ionic layer adsorption and reaction deposition method. The quantum dot sensitized solar cell based on the hierarchical TiO2 structure shows a current density JSC = 1.44 mA, VOC = 0.46 V, FF = 0.42 and η = 0.27%. The QD provide a high surface area and nano-urchins offer a highway for fast charge collection and multiple scattering centers within the photoelectrode.

A bifacial quantum dot-sensitized solar cell with all-cadmium sulfide photoanode

Science.gov (United States)

Ma, Chunqing; Tang, Qunwei; Liu, Danyang; Zhao, Zhiyuan; He, Benlin; Chen, Haiyan; Yu, Liangmin

2015-02-01

Pursuit of a high power conversion efficiency and reduction of electricity-generation cost has been a persistent objective for quantum dot-sensitized solar cells (QDSSCs). We present here the fabrication of a QDSSC comprising a nanoflower-structured CdS anode, a liquid electrolyte having S2-/Sn2- redox couples, and a transparent CoSe counter electrode. Nanoflower-structured CdS anodes are prepared by a successive ionic layer adsorption and reaction (SILAR) method and subsequently hydrothermal strategy free of any surfactant or template. The CdS nanoparticles synthesized by a SILAR method act as "seed crystal" for growth of CdS nanoflowers. The average electron lifetime is markedly elevated in nanoflower-structured CdS anode in comparison with CdS nanoparticle or nanoporous CdS microsphere anode. Herein, we study the effect of synthesis method on CdS morphology and solar cell's photovoltaic performance, showing a power conversion efficiency of 1.67% and 1.17% for nanoflower-structured CdS QDSSC under front and rear irradiations, respectively.

Core/Shell Structured TiO2/CdS Electrode to Enhance the Light Stability of Perovskite Solar Cells.

Science.gov (United States)

Hwang, Insung; Baek, Minki; Yong, Kijung

2015-12-23

In this work, enhanced light stability of perovskite solar cell (PSC) achieved by the introduction of a core/shell-structured CdS/TiO2 electrode and the related mechanism are reported. By a simple solution-based process (SILAR), a uniform CdS shell was coated onto the surface of a TiO2 layer, suppressing the activation of intrinsic trap sites originating from the oxygen vacancies of the TiO2 layer. As a result, the proposed CdS-PSC exhibited highly improved light stability, maintaining nearly 80% of the initial efficiency after 12 h of full sunlight illumination. From the X-ray diffraction analyses, it is suggested that the degradation of the efficiency of PSC during illumination occurs regardless of the decomposition of the perovskite absorber. Considering the light-soaking profiles of the encapsulated cells and the OCVD characteristics, it is likely that the CdS shell had efficiently suppressed the undesirable electron kinetics, such as trapping at the surface defects of the TiO2 and preventing the resultant charge losses by recombination. This study suggests that further complementary research on various effective methods for passivation of the TiO2 layer would be highly meaningful, leading to insight into the fabrication of PSCs stable to UV-light for a long time.

Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

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Xiaojun Zhu

2015-01-01

Full Text Available We use the successive ionic layer adsorption and reaction (SILAR method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

Aging effect of quantum dots on solar cells sensitized with nano-crystals of CdS and PbS

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V Borhanifar

2015-01-01

Full Text Available In this research, solar cells sensitized with CdS and PbS Nanocrystalline metal sulfides, chemically grown by SILAR, were fabricated and characterized. PV experiments including I-V test in the presence of light and dark,Vocdecay, and Electrochemical impedance spectroscopy were performed on the Cells made through this method in the presence of light and dark and in the time period of 2, 3, 6 and 10 days. From these experiments, the changes in indicators including fill factor, efficiency, open-circuit voltage, short-circuit current, lifetime of electrons in nanostructured anode electrode, recombination resistance and capacitance of the anode electrode-electrolyte interface were observed. Also, mechanisms for some existing evidences within photovoltaic experiments such as the increase and decrease of recombination resistance were proposed.

Cellulose acetate fibers covered by CdS nanoparticles for hybrid solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Cortina, Hugo; Martinez-Alonso, Claudia [Centro de Investigacion en Energia, UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580 (Mexico); Castillo-Ortega, Monica [Universidad de Sonora, Hermosillo, Sonora 83000 (Mexico); Hu, Hailin, E-mail: hzh@cie.unam.mx [Centro de Investigacion en Energia, UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580 (Mexico)

2012-09-20

In this work cellulose acetate (CA) fibers with a diameter of approximately 1 {mu}m were immersed in a cadmium sulfide (CdS) precursor solution. After 3 h the original white color CA fibers became yellow and maintained the same form, suggesting the deposition of CdS on fiber surface. SEM images showed that CA fibers were covered by uniformly sized CdS nanoparticles of approximately 100 nm. XRD and optical absorption spectra indicated that they contained mostly cubic crystalline phase with the optical band gap of 2.43 eV. CdS coated CA fibers, called CdS(CA) fibers, were dispersed in a polar dispersant (dimethyl sulfoxide, DMSO) and then mixed with a poly(3-hexylthiophene) (P3HT) solution in a non-polar solvent (dichlorobenzene, DCB). The mixture was cast onto a transparent conductive glass substrate (Indium-Tin-Oxide, ITO), and after solvent evaporation a thin layer of CdS(CA)-P3HT composite was formed. It is observed that the volume relation between the polar dispersant and non-polar solvent influences the solubility of the P3HT product in the composite coating and the photovoltaic performance of the corresponding cell as well. The mass ratio between CdS(CA) fibers and P3HT in the composite layer affects the optical absorption of the composite. The best photovoltaic performance was obtained in CdS(CA)-P3HT based cells with a volume relation between DCB and DMSO of 3.5-1, a mass ratio between CdS(CA) and P3HT of 1:1, and a rapid drying process for composite coatings.

Research and development of CdTe based thin film PV solar cells

Science.gov (United States)

Diso, Dahiru Garba

The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

Science.gov (United States)

Rajanikant, Ray Jayminkumar

pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further

Investigations on microstructural and optical properties of CdS films fabricated by a low-cost, simplified spray technique using perfume atomizer for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Ravichandran, K.; Philominathan, P. [PG and Research Department of Physics, AVVM, Sri Pushpam College, Poondi, Thanjavur District, Tamil Nadu (India)

2008-11-15

Good quality CdS films were fabricated by employing a simplified spray pyrolysis technique using perfume atomizer. CdS films have been deposited from aqueous solutions of sulphur and cadmium, keeping the molar concentrations of S:Cd = 0.01:0.01, 0.02:0.02, 0.04:0.04 and 0.06:0.06 in the starting solutions. The structural studies reveal that the S:Cd concentration has a strong influence on the microstructural characteristics of the sprayed CdS films. It was found that there is a transition in the preferred orientation from (0 0 2) plane to (1 0 1) plane when S:Cd molar concentration increases. The SEM images depict that the films are uniform and homogeneous. All the films have high optical transmittance (>80%) in the visible range. The optical band gap values are found to be in the range of 2.46-2.52 eV. CdS films fabricated by this simple and economic spray technique without using any carrier gas are found to be good in structural and optical properties which are desirable for photovoltaic applications. Hence, this simplified version of spray technique can be considered as an economic alternative to conventional spray pyrolysis (using carrier gas), for the mass production of low-cost, large area CdS coatings for solar cell applications. (author)

Optimization of the Photoanode of CdS Quantum Dot-Sensitized Solar Cells Using Light-Scattering TiO2 Hollow Spheres

Science.gov (United States)

Marandi, Maziar; Rahmani, Elham; Ahangarani Farahani, Farzaneh

2017-12-01

CdS quantum dot-sensitized solar cells (QDSCs) have been fabricated and their photoanode optimized by altering the thickness of the photoelectrode and CdS deposition conditions and applying a ZnS electron-blocking layer and TiO2 hollow spheres. Hydrothermally grown TiO2 nanocrystals (NCs) with dominant size of 20 nm were deposited as a sublayer in the photoanode with thickness in the range from 5 μm to 10 μm using a successive ionic layer adsorption and reaction (SILAR) method. The number of deposition cycles was altered over a wide range to obtain optimized sensitization. Photoanode thickness and number of CdS sensitization cycles around the optimum values were selected and used for ZnS deposition. ZnS overlayers were also deposited on the surface of the photoanodes using different numbers of cycles of the SILAR process. The best QDSC with the optimized photoelectrode demonstrated a 153% increase in efficiency compared with a similar cell with ZnS-free photoanode. Such bilayer photoelectrodes were also fabricated with different thicknesses of TiO2 sublayers and one overlayer of TiO2 hollow spheres (HSs) with external diameter of 500 nm fabricated by liquid-phase deposition with carbon spheres as template. The optimization was performed by changing the photoanode thickness using a wide range of CdS sensitizing cycles. The maximum energy conversion efficiency was increased by about 77% compared with a similar cell with HS-free photoelectrode. The reason was considered to be the longer path length of the incident light inside the photoanode and greater light absorption. A ZnS blocking layer was overcoated on the surface of the bilayer photoanode with optimized thickness. The number of CdS sensitization cycles was also changed around the optimized value to obtain the best QDSC performance. The number of ZnS deposition cycles was also altered in a wide range for optimization of the photovoltaic performance. It was shown that the maximum efficiency was increased by

Fabrication, Characterization, and Optimization of CdS and CdSe Quantum Dot-Sensitized Solar Cells with Quantum Dots Prepared by Successive Ionic Layer Adsorption and Reaction

Directory of Open Access Journals (Sweden)

H. K. Jun

2014-01-01

Full Text Available CdS and CdSe quantum dot-sensitized solar cells (QDSSCs were used for the study of determining the optimum preparation parameters that could yield the best solar cell performance. The quantum dots (QDs were coated on the surface of mesoporous TiO2 layer deposited on FTO substrate using the successive ionic layer adsorption and reaction (SILAR method. In this method the QDs are allowed to grow on TiO2 by dipping the TiO2 electrode successively in two different solutions for predetermined times. This method allows the fabrication of QDs in a facile way. Three preparation parameters that control the QD fabrication were investigated: concentration of precursor solutions, number of dipping cycles (SILAR cycles, and dipping time in each solution. CdS based QDSSC showed optimum performance when the QDs were prepared from precursor solutions having the concentration of 0.10 M using 4 dipping cycles with the dipping time of 5 minutes in each solution. For CdSe QDSSC, the optimum performance was achieved with QDs prepared from 0.03 M precursor solutions using 7 dipping cycles with 30 s dipping time in each solution. The QDs deposited on TiO2 surface were characterized using UV-vis absorption spectroscopy, FESEM, and TEM imaging.

Effects of ZnS layer on the performance improvement of the photosensitive ZnO nanowire arrays solar cells

Energy Technology Data Exchange (ETDEWEB)

Javed, Hafiz Muhammad Asif [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Gao, Yanping; Xing, Yonglei [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Kong, Ling Bing, E-mail: ELBKong@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

2016-08-01

The impact of ZnS layer as an interface modification on the photosensitive ZnO nanowire arrays solar cells was studied. CdS, CdSe and ZnS were deposited on ZnO nanowire arrays by SILAR method. When a ZnS layer was deposited, the quantum dot barrier was indirectly become in contact with the electrolyte, which thus restrained the flow of electrons. The CdS sensitized solar cells has an efficiency of 0.55% with the deposition of the ZnS(3) layer, that is, with a deposition of three times, whereas the CdS/CdSe co-sensitized solar cells has an efficiency of 2.03% with the deposition of the ZnS(1) layer. It was also noted that as the thickness of the of ZnS layer was increased, V{sub oc}, I{sub sc} and efficiencies of both the solar cells were first increased and then decreased. In addition, the CdS/N719 solar cells has an efficiency of 0.75% with the deposition of the ZnS(2) layer. - Highlights: • The impact of ZnS layer on the photosensitive ZnO nanowire solar cells was studied. • ZnS layer restrained the flow of electrons to the electrolyte. • CdS/CdSe co-sensitized solar cells have higher efficiency than CdS solar cells. • When ZnS layer was increased, V{sub oc} and I{sub sc} firstly increased and then decreased.

Toxicity of cadmium sulfide (CdS) nanoparticles against Escherichia coli and HeLa cells

International Nuclear Information System (INIS)

Hossain, Sk Tofajjen; Mukherjee, Samir Kumar

2013-01-01

Highlights: • Toxic effect of CdS NPs on the growth and cell division in E. coli was studied. • CdS NPs affected cell surface topology and cell division. • Downregulation of both FtsZ and FtsQ was observed due to NPs exposure. • CdS NPs affected HeLa cell morphology with fragmented nuclei. • All such effects might be due to elevated oxidative stress. -- Abstract: The present study endeavours to assess the toxic effect of synthesized CdS nanoparticles (NPs) on Escherichia coli and HeLa cells. The CdS NPs were characterized by DLS, XRD, TEM and AFM studies and the average size of NPs was revealed as ∼3 nm. On CdS NPs exposure bacterial cells changed morphological features to filamentous form and damage of the cell surface was found by AFM study. The expression of two conserved cell division components namely ftsZ and ftsQ in E. coli was decreased both at transcriptional and translational levels upon CdS NPs exposure. CdS NPs inhibited proper cell septum formation without affecting the nucleoid segregation. Viability of HeLa cells declined with increasing concentration of CdS NPs and the IC 50 value was found to be 4 μg/mL. NPs treated HeLa cells showed changed morphology with condensed and fragmented nuclei. Increased level of reactive oxygen species (ROS) was found both in E. coli and HeLa cells on CdS NPs exposure. The inverse correlation between declined cell viabilities and elevated ROS level suggested that oxidative stress seems to be the key event by which NPs induce toxicity both in E. coli and HeLa cells

TEMPERATUREEFFECT OFELECTRICALPROPERTIES OF CIGS SOLAR CELL

Directory of Open Access Journals (Sweden)

A. M. Ferouani

2015-07-01

Full Text Available In this paper we are interested in studying the copper–indium–gallium–selenium (CIGS solar cells sandwiched between cadmium sulfide (CdS and ZnO as buffer layers, and Molybdenum (Mo. Thus, we report our simulation results using the capacitance simulator (SCAPS in terms of layer thickness, absorber layer band gap and operating temperature to find out the optimum choice. An efficiency of 20.61% (with Voc of 635.2mV, Jsc of 44.08 mA/cm2 and fill factor of 0.73 has been achieved with CdS used as buffer layer as the reference case. It is also found that the high efficiency CIGS cells with the low temperature were a very high efficiency conversion.

Investigation of solar cell radiation damage

International Nuclear Information System (INIS)

Bernard, J.; Reulet, R.; Arndt, R.A.

1974-01-01

Development of communications satellites has led to the requirement for a greater and longer lived solar cell power source. Accordingly, studies have been undertaken with the aim of determining which solar cell array provides the greatest power at end of life and the amount of degradation. Investigation of the damage done to thin silicon and thin film CdS solar cells is being carried out in two steps. First, irradiations were performed singly with 0.15, 1.0 and 2.0MeV electrons and 0.7, 2.5 and 22MeV proton. Solar cells and their cover materials were irradiated separately in order to locate the sites of the damage. Diffusion length and I.V. characteristics of the cells and transmission properties of the cover materials were measured. All neasurements were made in vacuum immediately after irradiation. In the second part it is intended to study the effect of various combinations of proton, electron and photon irradiation both with and without an electrical load. The results of this part show whether synergism is involved in solar cell damage and the relative importance of each of three radiation sources if synergism is found [fr

Enhanced Performance of Nanoporous Titanium Dioxide Solar Cells Using Cadmium Sulfide and Poly(3-hexylthiophene Co-Sensitizers

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Murugathas Thanihaichelvan

2017-09-01

Full Text Available This work reports the effect of co-sensitization of nanoporous titanium dioxide using Cadmium Sulfide (CdS and poly(3-hexylthiophene (P3HT on the performance of hybrid solar cells. CdS nanolayer with different thicknesses was grown on Titanium Dioxide (TiO2 nanoparticles by chemical bath deposition technique with varying deposition times. Both atomic force microscopy (AFM and UV–Vis–NIR spectroscopy measurements of TiO2 electrode sensitized with and without CdS layer confirm that the existence of CdS layer on TiO2 nanoparticles. AFM images of CdS-coated TiO2 nanoparticles show that the surface roughness of the TiO2 nanoparticle samples decreases with increasing CdS deposition times. Current density–voltage and external quantum efficiency (EQE measurements were carried out for corresponding solar cells. Both short circuit current density (JSC and fill factor were optimized at the CdS deposition time of 12 min. On the other hand, a steady and continuous increment in the open circuit voltage (VOC was observed with increasing CdS deposition time and increased up to 0.81 V when the deposition time was 24 min. This may be attributed to the increased gradual separation of P3HT and TiO2 phases and their isolation at the interfaces. The higher VOC of 0.81 V was due to the higher built-in voltage at the CdS–P3HT interface when compared to that at the TiO2–P3HT interface. Optimized nanoporous TiO2 solar cells with CdS and P3HT co-sensitizers showed external quantum efficiency (EQE of over 40% and 80% at the wavelengths corresponding to strong absorption of the polymer and CdS, respectively. The cells showed an overall average efficiency of over 2.4% under the illumination of 70 mW/cm2 at AM 1.5 condition.

What is the band alignment of Cu2ZnSn(S,Se)4 solar cells?

DEFF Research Database (Denmark)

Crovetto, Andrea; Hansen, Ole

2017-01-01

The band alignment at the Cu2ZnSn(S,Se)4/CdS solar cell heterojunction is a controversial issue, as different measurements and calculations point to substantially different conduction band offsets (CBO). As the actual value of the CBO has profound implications on solar cell performance, the aim...... of this work is to separate genuine process-dependent variations in the CBO from errors in its experimental determination. We argue that the two most likely mechanisms responsible for real CBO variations are Fermi level pinning (which tends to decrease the CBO) and chemical interdiffusion (which tends...... measurement approaches. Interestingly, a rough correlation can be established between the CBO measured at the Cu2ZnSnS4/CdS interface by different groups and their corresponding solar cell efficiency: lower-efficiency cells often have a large "cliff-like" offset, whereas most high-efficiency cells have...

Performance improvement of CdS quantum dots sensitized TiO{sub 2} solar cells by introducing a dense TiO{sub 2} blocking layer

Energy Technology Data Exchange (ETDEWEB)

Tachibana, Yasuhiro; Umekita, Kazuya; Otsuka, Yasuhide; Kuwabata, Susumu [Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Yamada-oka, Suita, Osaka 565-0871 (Japan)], E-mail: y.tachibana@chem.eng.osaka-u.ac.jp

2008-05-21

A dense TiO{sub 2} electron blocking layer was introduced on a conducting glass in CdS quantum dots sensitized solar cells to investigate electron leakage into the electrolyte. A ferricyanide/ferrocyanide redox couple was employed, as a model electrolyte, possessing a high standard rate constant. The analysis of the I-V characteristics, using a one-diode model, revealed that an increase in this layer, up to 50 nm, significantly suppresses the electron leakage, enhancing the shunt resistance by a factor of 200. An energy conversion efficiency of 1.0% was attained on account of the improved open circuit voltage and fill factor. (fast track communication)

Quantum dot sensitized solar cell based on TiO2/CdS/Ag2S heterostructure

Science.gov (United States)

Pawar, Sachin A.; Patil, Dipali S.; Kim, Jin Hyeok; Patil, Pramod S.; Shin, Jae Cheol

2017-04-01

Quantum dot sensitized solar cell (QDSSC) is fabricated based on a stepwise band structure of TiO2/CdS/Ag2S to improve the photoconversion efficiency of TiO2/CdS system by incorporating a low band gap Ag2S QDs. Vertically aligned TiO2 nanorods assembly is prepared by a simple hydrothermal technique. The formation of CdS and Ag2S QDs over TiO2 nanorods assembly as a photoanode is carried out by successive ionic layer adsorption and reaction (SILAR) technique. The synthesized electrode materials are characterized by XRD, XPS, field emission scanning electron microscopy (FE-SEM), Optical, solar cell and electrochemical performances. The results designate that the QDs of CdS and Ag2S have efficiently covered exterior surfaces of TiO2 nanorods assembly. A cautious evaluation between TiO2/CdS and TiO2/CdS/Ag2S sensitized cells tells that CdS and Ag2S synergetically helps to enhance the light harvesting ability. Under AM 1.5G illumination, the photoanodes show an improved power conversion efficiency of 1.87%, in an aqueous polysulfide electrolyte with short-circuit photocurrent density of 7.03 mA cm-2 which is four fold higher than that of a TiO2/CdS system.

Improved efficiency of CdS quantum dot sensitized solar cell with an organic redox couple and a polymer counter electrode

International Nuclear Information System (INIS)

Shu, Ting; Li, Xiong; Ku, Zhi-Liang; Wang, Shi; Wu, Shi; Jin, Xiao-Hong; Hu, Chun-Di

2014-01-01

Highlights: • The organic AT - /BAT and T - /T 2 redox couples were used in CdS QDSSCs. • The AT - /BAT and PEDOT are better than polysulfide electrolyte and Pt and CoS CEs. • An improved η of 1.53% was obtained with the AT - /BAT electrolyte and the PEDOT CE. • PEDOT CE deposited at high deposition charge has better electrochemical activity. • The AT - /BAT outperformed T - /T 2 electrolyte due to suppressed charge recombination. - Abstract: Quantum dot sensitized solar cells (QDSSCs) based on an organic thiolate/disulfide redox couple (C 7 H 5 N 4 S - /C 14 H 10 N 8 S 2 or C 2 H 3 N 4 S - /C 4 H 6 N 8 S 2 ) and a polymer counter electrode [poly (3, 4-ethylenedioxythiophene), PEDOT] were fabricated and their photovoltaic performance were investigated. In CdS QDSSC, the organic C 7 H 5 N 4 S - /C 14 H 10 N 8 S 2 electrolyte shows better performance than the polysulfide electrolyte, and the PEDOT counter electrode exhibits higher efficiency than that of the Pt counter electrode and the CoS counter electrode. An efficiency of 1.53% was achieved in this QDSSC. The influences of the morphology and the deposition charge of the PEDOT counter electrodes on the cell performance were also studied. Furthermore, it was found that the C 7 H 5 N 4 S - /C 14 H 10 N 8 S 2 redox couple outperformed the C 2 H 3 N 4 S - /C 4 H 6 N 8 S 2 redox couple due to reduced electron recombination

Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

Yanyan Gao

2014-01-01

Full Text Available Incorporated foreign atoms into the quantum dots (QDs used in heterojunction have always been a challenge for solar energy conversion. A foreign atom indium atom was incorporated into PbS/CdS QDs to prepare In-PbS/In-CdS heterojunction by successive ionic layer adsorption and reaction method which is a chemical method. Experimental results indicate that PbS or CdS has been doped with In by SILAR method; the concentration of PbS and CdS which was doped In atoms has no significantly increase or decrease. In addition, incorporating of Indium atoms has resulted in the lattice distortions or changes of PbS or CdS and improved the light harvest of heterojunction. Using this heterojunction, Pt counter electrode and polysulfide electrolyte, to fabricate quantum dot sensitized solar cells, the short circuit current density ballooned to 27.01 mA/cm2 from 13.61 mA/cm2 and the open circuit voltage was improved to 0.43 V from 0.37 V at the same time.

A comparative study of CdS thin films deposited by different techniques

Energy Technology Data Exchange (ETDEWEB)

Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

2013-05-01

Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

Numerical investigation of optimized CZTSSe based solar cell in Wx-Amps environment

Science.gov (United States)

Mohanty, Soumya Priyadarshini; Padhy, Srinibasa; Chowdhury, Joy; Sing, Udai P.

2018-05-01

The CZTSSe is the modified version of CZTS with selenium infusion. It shows maximum efficiency in the band gap from 1 to 1.4 eV. In our present work CZTSSe based solar cell is investigated using Wx-Amps tool. The Mo layer, absorber layer, CdS layer, i-ZnO [4]and Al-ZnO layers with their electrical, optical and material parameters are fitted in the tool. The vital parameters such as carrier density, thickness of the CZTSSe absorber layer, operating temperature, CdS buffer layer thickness and its carrier density on the cell interpretation are calculated. From[4] the simulation results it is apparent that the optimal absorber layer varies from 2.9 µm to 3.7 µm. The temperature variation has a strong influence on the efficiency of the cell. An optimal efficiency of 22% (With Jsc=33 mA/cm2, Voc=0.98 V, and fill factor= 68%) are attained. These results will give some insight for makeing higher efficiency CZTSSe based solar cell.

An optimized efficient dual junction InGaN/CIGS solar cell: A numerical simulation

Science.gov (United States)

Farhadi, Bita; Naseri, Mosayeb

2016-08-01

The photovoltaic performance of an efficient double junction InGaN/CIGS solar cell including a CdS antireflector top cover layer is studied using Silvaco ATLAS software. In this study, to gain a desired structure, the different design parameters, including the CIGS various band gaps, the doping concentration and the thickness of CdS layer are optimized. The simulation indicates that under current matching condition, an optimum efficiency of 40.42% is achieved.

Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells

Directory of Open Access Journals (Sweden)

A. Le Donne

2015-01-01

Full Text Available Cu2ZnSnS4 (CZTS absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, GaSe2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

Solution precursor plasma deposition of nanostructured CdS thin films

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2012-01-01

Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

Solution precursor plasma deposition of nanostructured CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

Characterization of CBD-CdS layers with different S/Cd ratios in the chemical bath and their relation with the efficiency of CdS/CdTe solar cells

International Nuclear Information System (INIS)

Vigil-Galan, O.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Jimenez-Escamilla, M.G.; Aguilar-Hernandez, J.; Contreras-Puente, G.; Sastre-Hernandez, J.; Sanchez-Meza, E.; Ramon-Garcia, M.L.

2007-01-01

In previous papers we have reported the improvement of the efficiency of CdS/CdTe solar cells by varying the thiourea/CdCl 2 ratio (R tc ) in the chemical bath solution used for the deposition of the CdS layers. In this work, a more complete study concerning the physical properties of Chemical Bath Deposited (CBD) CdS layers studied by photoluminescence, X-ray diffraction and optical spectroscopy are correlated to the I-V characteristics under AM 1.5 sunlight and the spectral response of CdS/CdTe solar cells. It is confirmed that the optimum R tc for the CBD CdS films is R tc = 5, since in this case the best solar cells were obtained and these films show the better optical and structural characteristics

Photovoltaic properties of sintered CdS/CdTe solar cells doped with Cu

International Nuclear Information System (INIS)

Park, J.W.; Ahn, B.T.; Im, H.B.; Kim, C.S.

1992-01-01

In this paper, all polycrystalline CdS/CdTe solar cells doped with Cu are prepared by a screen printing and sintering method. Cell parameters of the sintered CdS/CdTe solar cells have been investigated in an attempt to find out the optimum doping conditions and concentrations of Cu by adding various amounts of CuCl 2 either into CdTe layer or into back contact carbon layer. Cell parameters of the sintered CdS/CdTe solar cells which contained various amounts of CuCl 2 in the CdTe layers before sintering stay at about the same values as the amount of CuCl 2 increases up to 25 ppm, and then decreases sharply as the amount of CuCl 2 further increases. The Cu added in the CdTe layer diffuses into the CdS layer during the sintering of the CdS-CdTe composite at 625 degrees C to densify the CdTe layer and causes the decrease in the optical transmission of CdS resulting in the degradation of the cell performance. In case the Cu dopant was dispersed in the back carbon paint and was followed by annealing, all cell parameters are improved significantly compared with those fabricated by adding CuCl 2 in the CdTe layer before sintering. A sintered CdS/CdTe solar cell which contained 25 ppm CuCl 2 in the carbon paste and was annealed at 350 degrees C for 10 min shows the highest efficiency. The efficiency of this cell is 12.4% under solar irradiation with an intensity of 80.4 mW/cm 2

Role of ZnO photoanode nanostructures and sensitizer deposition approaches on the photovoltaic properties of CdS/CdSe and CdS1-xSex quantum dot-sensitized solar cells

Science.gov (United States)

Şişman, İlkay; Tekir, Oktay; Karaca, Hüseyin

2017-02-01

Hierarchical bundle-like ZnO nanorod arrays (BNRs) were synthesized by a one-pot hydrothermal method based on two consecutive temperature steps for cascade CdS/CdSe and ternary CdS1-xSex alloy quantum dot-sensitized solar cells (QDSSCs) as photoanode. The CdS/CdSe and CdS1-xSex QDs were deposited on the surface of the ZnO BNRs by conventional and modified successive ionic-layer adsorption and reaction (SILAR) methods, respectively. Using the ZnO BNRs/CdS/CdSe photoanode, the power conversion efficiency reaches 2.08%, which is 1.8 times higher than that of pristine ZnO nanorods/CdS/CdSe photoanode, while by applying ZnO BNRs/CdS1-xSex, the power conversion efficiency improves 2.52%. The remarkably improved photovoltaic performance is mainly derived from the bundle-like nanorod arrays structure, which increases the QDs loading amount and the scattering effect for light absorption, and the appropriate conduction band energy, sufficient Se amount and well coverage of the ternary CdS1-xSex QDs result in enhanced photogenerated electron injection, high light absorption and reduced recombination, respectively. As a result, ZnO BNRs/CdS1-xSex combination can significantly improve performance of QDSSCs.

Improvement of the energy conversion efficiency of Cu(In,Ga)Se{sub 2} solar cells using an additional Zn(S,O) buffer

Energy Technology Data Exchange (ETDEWEB)

Choi, In-Hwan, E-mail: ihchoi@cau.ac.kr [Chung-Ang University, Department of Physics, Seoul 156-756 (Korea, Republic of); Choi, Chul-Hwan [LG Innotek, Gyeonggi-do, Ansan-si 426-791 (Korea, Republic of)

2012-12-15

CuInGaSe{sub 2} (CIGS) solar cells were prepared with two different buffer structures. Sample A had a single, thin CdS buffer, {approx} 25 nm in thickness, and Sample B had a very thin CdS buffer (< 5 nm thickness) with an additional Zn(S,O) buffer layer. The CIGS and CdS layers in these samples were prepared using a 3-step co-evaporation method and chemical bath deposition, respectively, whereas the additional Zn(S,O) buffer and boron (B)-doped ZnO window layer were prepared by metal organic chemical vapor deposition. The current-voltage curves, quantum efficiency, depth profile by secondary ion mass spectrometry, and transmission electron microscopy images of both samples were analyzed. Sample B showed greater open circuit voltage than Sample A, whereas the short circuit current of Sample B was less than that of Sample A. Even though the energy conversion efficiency is not markedly improved compared to the highest recorded value of each sample, it was quite obvious throughout this experiment that the additional buffer cells had higher reliability and homogeneous properties than CdS buffer cells. - Highlights: Black-Right-Pointing-Pointer CuInGaSe{sub 2} solar cells were prepared with two different buffer structures. Black-Right-Pointing-Pointer One sample had a CdS buffer only, and the other had a very thin CdS and Zn(S,O) buffer. Black-Right-Pointing-Pointer Additional Zn(S,O) buffer was prepared by metal organic chemical vapor deposition. Black-Right-Pointing-Pointer Energy conversion efficiency of the additional buffer cells was slightly improved. Black-Right-Pointing-Pointer CdS/Zn(S,O) cells had higher reliability and homogeneous properties than CdS cells.

A preliminary study of CdS for solar cells using combined TEM and cathodoluminescence

International Nuclear Information System (INIS)

Mam, K.; Durose, K.; Halliday, D.P.; Szczerbakow, A.

2005-01-01

A study of the suitability of a combined transmission electron microscope (TEM)/cathodoluminescence (CL) imaging and spectroscopy apparatus for investigations of CdS is presented. Photoluminescence (PL) was used to evaluate the effect of the Ar + and I + ion beam thinning used in TEM specimen preparation of CdS: a minor increase in yellow emission (594 nm) resulted. However, excitation of luminescence spectra in the TEM had a quenching effect on red luminescence (734 nm), this being considered due to the high excitation density compared to that in PL. Significant electron beam damage to the CdS could be avoided by using scanning transmission electron microscope (STEM) illumination in preference to the conventional TEM mode, which generally uses higher beam current density. Dislocation images were correlated with contrast in the STEM-CL imaging mode. The potential of the apparatus to make further direct correlations of CL images with diffraction contrast TEM imaging was assessed using the Rose visibility criterion

Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

International Nuclear Information System (INIS)

Gonzalez, G.; Krishnan, B.; Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K.; Shaji, S.

2011-01-01

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2011-08-31

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

Science.gov (United States)

Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

2012-10-01

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

Nanoniobia modification of CdS photoanode for an efficient and stable photoelectrochemical cell.

Science.gov (United States)

Pareek, Alka; Paik, Pradip; Borse, Pramod H

2014-12-30

Herein we report the surface modification of a CdS film by niobia nanoparticles via thioglycerol as an organic linker and thus fabricate an efficient and a stable photoanode for a photoelectrochemical (PEC) cell. We have synthesized three differenly sized (∼3, ∼6 ,and ∼9 nm) niobia nanoparticles by a hydrothermal synthesis approach and have further investigated the particle-size-dependent PEC performance of the nanoparticle-modified CdS photoanode. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) confirm the formation of Nb2O5 nanoparticles that are prepared via decomposition of the niobium peroxo complex during the hydrothermal reaction and reveal the presence of surface OH(-) groups over niobia nanoparticles that impart a high catalytic property to a material. The nano-Nb2O5-modified photoanode displayed a 23-fold higher power conversion efficiency compared to that of CdS. This modified structure increases the open circuit voltage (OCV) from 0.65 to 0.77 V, which is attributed to the nano-Nb2O5-induced surface passivation effect over bare CdS. Linking of nanoparticles on the CdS surface improves the photocorrosion stability of the CdS photoanode for even longer than 4 h in contrast to the tens of minutes for the base CdS surface. The uniform coverage of the CdS photoanode surface by niobia nanoparticles is thus found to be the controlling parameter for achieving a higher PEC performance and stability of the photoanode. This finding directed us to design an improved CdS photoanode for efficient and prolonged PEC hydrogen generation from a PEC cell.

Effect of annealing time on optical and electrical properties of CdS thin films

Science.gov (United States)

Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

2018-05-01

Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

Parameters optimization of CIGS solar cell using 2D physical modeling

Science.gov (United States)

Dabbabi, Samar; Nasr, Tarek Ben; Kamoun-Turki, Najoua

In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 μm ZnO:Al, 0.06 μm i-ZnO, 0.04 μm CdS and 3 μm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm-3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature.

Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

Energy Technology Data Exchange (ETDEWEB)

Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.; Abbas, Ali; Burst, James M.; Mahabaduge, Hasitha P.; Metzger, Wyatt K.; Walls, John M.; Lonergan, Mark C.; Barnes, Teresa M.; Wolden, Colin A.

2016-12-01

Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

KAUST Repository

Roelofs, Katherine E.

2013-03-21

Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

CdS films deposited by chemical bath under rotation

International Nuclear Information System (INIS)

Oliva-Aviles, A.I.; Patino, R.; Oliva, A.I.

2010-01-01

Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl 2 , KOH, NH 4 NO 3 and CS(NH 2 ) 2 as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

CdS films deposited by chemical bath under rotation

Energy Technology Data Exchange (ETDEWEB)

Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

2010-08-01

Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

Graded band-gap engineering for increased efficiency in CZTS solar cells

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-02-01

In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9% is recorded for the optimized solar cell with a relative improvement of 92%, compared with the reference cell efficiency of 8.8%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889 mV, a short-circuit current of 28.5 mA and a fill factor of 66%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.

Processing of semiconductors and thin film solar cells using electroplating

Science.gov (United States)

Madugu, Mohammad Lamido

The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

Enhanced photovoltaic performance utilizing effective charge transfers and light scattering effects by the combination of mesoporous, hollow 3D-ZnO along with 1D-ZnO in CdS quantum dot sensitized solar cells.

Science.gov (United States)

Chetia, Tridip Ranjan; Barpuzary, Dipankar; Qureshi, Mohammad

2014-05-28

A combination of 3-dimensional (3D) hollow mesoporous ZnO microspheres (ZnO HMSP) and vertically grown one-dimensional ZnO nanowires (1D ZnO NWs) on a fluorine doped tin oxide (FTO) coated glass substrate has been investigated as a photoanode for a CdS quantum dot-sensitized solar cell (QSSC). A comparative study of the photovoltaic performance of the solar cell with devices fabricated with pristine ZnO HMSPs and ZnO NWs was carried out. The proposed photovoltaic device exhibits an enhancement in power conversion efficiency (PCE) upto ∼74% and ∼35%, as compared to the 1D ZnO NW and ZnO HMSP based solar cells. The maximum incident photon-to-current conversion efficiency (IPCE) for the solar cell was observed to be ∼40%, whereas for the devices fabricated with bare ZnO HMSP and ZnO NW the IPCE were only ∼32% and ∼19%, respectively. The enhanced photovoltaic performance of the solar cell is attributed to the high Brunauer-Emmett-Teller (BET) surface area, efficient light-scattering effects and facilitated diffusion of the electrolyte for better functioning of the redox couple (S(2-)/Sn(2-)) in the hybrid photoanode. Moreover, a faster electron transport through 1D ZnO NWs provides better charge collection from the photoactive layer, which leads to an increase in the short circuit current density of the device. The present study highlights the design and development of a new hybrid photoanode for solar harvesting.

ROS-mediated apoptotic cell death in prostate cancer LNCaP cells induced by biosurfactant stabilized CdS quantum dots.

Science.gov (United States)

Singh, Braj R; Singh, Brahma N; Khan, W; Singh, H B; Naqvi, A H

2012-08-01

Cadmium sulfide (CdS) quantum dots (QDs) have raised great attention because of their superior optical properties and wide utilization in biological and biomedical studies. However, little is known about the cell death mechanisms of CdS QDs in human cancer cells. This study was designed to investigate the possible mechanisms of apoptosis induced by biosurfactant stabilized CdS QDs (denoted as "bsCdS QDs") in human prostate cancer LNCaP cells. It was also noteworthy that apoptosis correlated with reactive oxygen species (ROS) production, mitochondrial damage, oxidative stress and chromatin condensation in a dose- and time-dependent manner. Results also showed involvement of caspases, Bcl-2 family proteins, heat shock protein 70, and a cell-cycle checkpoint protein p53 in apoptosis induction by bsCdS QDs in LNCaP cells. Moreover, pro-apoptotic protein Bax was upregulated and the anti-apoptotic proteins, survivin and NF-κB were downregulated in bsCdS QDs exposed cells. Protection of N-acetyl cysteine (NAC) against ROS clearly suggested the implication of ROS in hyper-activation of apoptosis and cell death. It is encouraging to conclude that biologically stabilized CdS QDs bear the potential of its applications in biomedicine, such as tumor therapy specifically by inducing caspase-dependent apoptotic cell death of human prostate cancer LNCaP cells. Crown Copyright © 2012. Published by Elsevier Ltd. All rights reserved.

CdSxSe1−x alloyed quantum dots-sensitized solar cells based on different architectures of anodic oxidation TiO2 film

International Nuclear Information System (INIS)

Li, Zhen; Yu, Libo; Liu, Yingbo; Sun, Shuqing

2014-01-01

Nanostructured TiO 2 translucent films with different architectures including TiO 2 nanotube (NT), TiO 2 nanowire (NW), and TiO 2 nanowire/nanotube (NW/NT) have been produced by second electrochemical oxidization of TiO 2 NT with diameter around 90–110 nm via modulation of applied voltage. These TiO 2 architectures are sensitized with CdS x Se 1−x alloyed quantum dots (QDs) in sizes of around 3–5 nm aiming to tune the response of the photoelectrochemical properties in the visible region. One-step hydrothermal method facilitates the deposition of CdS x Se 1−x QDs onto TiO 2 films. These CdS x Se 1−x QDs exhibit a tunable range of light absorption with changing the feed molar ratio of S:Se in precursor solution, and inject electrons into TiO 2 films upon excitation with visible light, enabling their application as photosensitizers in sensitized solar cells. Power conversion efficiency (PCE) of 2.00, 1.72, and 1.06 % are achieved with CdS x Se 1−x (obtained with S:Se = 0:4) alloyed QDs sensitized solar cells based on TiO 2 NW/NT, TiO 2 NW, and TiO 2 NT architectures, respectively. The significant enhancement of power conversion efficiency obtained with the CdS x Se 1−x /TiO 2 NW/NT solar cell can be attributed to the extended absorption of light region tuned by CdS x Se 1−x alloyed QDs and enlarged deposition of QDs and efficient electrons transport provided by TiO 2 NW/NT architecture

C. pneumoniae CdsL regulates CdsN ATPase activity, and disruption with a peptide mimetic prevents bacterial invasion

Directory of Open Access Journals (Sweden)

Chris Blair Stone

2011-02-01

Full Text Available Chlamydiae are obligate intracellular pathogens that likely require type III secretion (T3S to invade cells and replicate intracellulary within a cytoplasmic vacuole called an inclusion body. C. pneumoniae possess a YscL ortholog, CdsL, that has been shown to interact with the T3S ATPase (CdsN. In this report we demonstrate that CdsL down-regulates CdsN enzymatic activity in a dose-dependent manner. Using PepScan epitope mapping we identified two separate binding domains to which CdsL binds viz. CdsN 221-229 and CdsN265-270. We confirmed the binding domains using a pull-down assay and showed that GST-CdsN221-270, which encompasses these peptides, co-purified with His-CdsL. Next, we used orthology modeling based on the crystal structure of a T3S ATPase ortholog from E. coli, EscN, to map the binding domains on the predicted three dimensional structure of CdsN. The CdsL binding domains mapped to the catalytic domain of the ATPase, one in the central channel of the ATPase hexamer and one on the outer face. Since peptide mimetics have been used to disrupt essential protein interactions of the chlamydial T3S system and inhibit T3S-mediated invasion of HeLa cells, we hypothesized that if CdsL – CdsN binding is essential for regulating T3S then a CdsN peptide mimetic could be used to potentially block T3S and Chlamydial invasion. Treatment of EBs with a CdsN peptide mimetic inhibited C. pneumoniae invasion into HeLa cells in a dose-dependent fashion. This report represents the first use of Pepscan technology to identify binding domains for specific T3S proteins viz. CdsL on the ATPase, CdsN, and demonstrates that peptide mimetics can be used as anti-virulence factors to block bacterial invasion.

The role of Cd and Ga in the Cu(In,Ga)S2/CdS heterojunction studied with X-ray spectroscopic methods

International Nuclear Information System (INIS)

Johnson, Benjamin E.

2010-01-01

Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S 2 /CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S 2 (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S 2 /CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S 2 /CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S 2 conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot be CdS as this is

Methodological comparison on hybrid nano organic solar cell fabrication

Science.gov (United States)

Vairavan, Rajendaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The development of low cost solar cells has been the main focus in recent years. This has lead to the generation of photovoltaic cells based on hybrid of nanoparticle-organic polymer materials. This type of hybrid photovoltaic cells can overcome the problem of polymeric devices having low optical absorption and carrier mobilities. The hybrid cell has the potential of bridging the efficiency gap, which in present in organic and inorganic semiconductor materials. This project focuses on obtaining an hybrid active layer consisting of nanoparticles and organic polymer, to understand the parameter involved in obtaining this active layer and finally to investigate if the addition of nano particles in to the active layer could enhance the output of the hybrid solar cell. The hybrid active layer have will be deposited using the spin coating technique by using CdTe, CdS nano particles mixed with poly (2-methoxy,5-(2-ethyl-hexyloxy)-p-phenylvinylene)MEH-PPV.

Effect of TEA on characteristics of CdS/PbS thin film solar cells prepared by CBD

Directory of Open Access Journals (Sweden)

Sattarian H.

2016-09-01

Full Text Available In this study, a solar cell with a glass/ITO/CdS/PbS/Al structure was constructed. Both window (CdS and absorption (PbS layers were deposited by chemical bath deposition (CBD method. The CdS window layer was deposited on ITO-glass. The PbS nanocrystalline thin film was prepared with and without triethanolamine on CdS films at bath temperature of 25 °C. CdS and PbS nanocrystals were identified using XRD and SEM. The cells are photosensitive in a large spectral range (at visible and near infrared regions. The cell with absorbing layer obtained from the bath without TEA has higher efficiency with the following parameters: the open circuit voltage (Voc is 275 mV, short circuit current (Jsc is 12.24 mA/cm2, maximum voltage (Vmax is 165 mV and maximum current (Jmax is 7.11 mA/cm2 with the efficiency η = 1.31 %, fill factor FF is 32 % under the illumination intensity of 90 mW/cm2. The cells have an area of 0.15 cm2.

Parameters optimization of CIGS solar cell using 2D physical modeling

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Samar Dabbabi

Full Text Available In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 µm ZnO:Al, 0.06 µm i-ZnO, 0.04 µm CdS and 3 µm CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 1018 cm−3. The optimized CIGS solar cell characteristics were a current density of short circuit Jsc = 38.75 mA/cm2, an open-circuit voltage V0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency η = 23.20%. This result is in good agreement with experimental efficiencies found in literature. Keywords: CIGS solar cell, Electrical characteristics, Silvaco-Atlas software

The role of Cd and Ga in the Cu(In,Ga)S{sub 2}/CdS heterojunction studied with X-ray spectroscopic methods

Energy Technology Data Exchange (ETDEWEB)

Johnson, Benjamin E.

2010-08-15

Photovoltaic cells with the structure Glass/Mo/Cu(In,Ga)S{sub 2}/CdS/i-ZnO/n+-ZnO are currently among the most successful and promising thin-layer solar cells. In this system, the Cu(In,Ga)S{sub 2} (CIS) acts as the absorber, the CdS as the buffer layer and the ZnO as the window layer. The goal of this work is the investigation of the Cu(In,Ga)S{sub 2}/CdS semiconductor heterojunction both as a component of the solar cell and as a separate material system. The characteristics of this junction were investigated both during junction formation through chemical bath deposition (CBD) and after the junction was completed. It is currently thought that the Cu(In,Ga)S{sub 2}/CdS junction is responsible for several different properties of the solar cell: lattice matching and band offset optimization between the absorber and window layer and chemical passivation of the absorber surface by the CBD-CdS process on CIS which acts to reduce the surface defect density. The Cd may also pin the Fermi Level on the CIS surface or cause a type inversion of the absorber surface from p-type to n-type. In order to investigate the junction several new methods were used along side the conventional methods of X-ray, Ultraviolet and Inverse Photoelectron Spectroscopy. These were Near-UV Constant Final State Yield Spectroscopy for the measurement of the valence band offset at the interface between CIS and CdS and Near Edge X-ray Absorption Fine Structure to follow the development of the Cu(In,Ga)S{sub 2} conduction band edge with increasing Ga concentration. Additionally, the advantages and disadvantages of the established and new methods were compared and discussed. It was discovered that the deposition of CdS neither pins the Fermi Level on the CIS surface at a position important for the solar cell, nor does it dope the absorber surface, although the deposition does lead to the formation of a Cd-containing CIS surface layer (CIS:Cd). Because this surface layer is not soluble in HCl it cannot

Effect of CdS/Mg-Doped CdSe Cosensitized Photoanode on Quantum Dot Solar Cells

Directory of Open Access Journals (Sweden)

Yingxiang Guan

2015-01-01

Full Text Available Quantum dots have emerged as a material platform for low-cost high-performance sensitized solar cells. And doping is an effective method to improve the performance of quantum dot sensitized solar cells (QDSSCs. Since Kwak et al. from South Korea proved the incorporation of Mg in the CdSe quantum dots (QDs in 2007, the Mg-doped CdSe QDs have been thoroughly studied. Here we report a new attempt on CdS/Mg-doped CdSe quantum dot cosensitized solar cells (QDCSSC. We analyzed the performance of CdS/Mg-doped CdSe quantum dot cosensitized solar cells via discussing the different doping concentration of Mg and the different SILAR cycles of CdS. And we studied the mechanism of CdS/Mg-doped CdSe QDs in detail for the reason why the energy conversion efficiency had been promoted. It is a significant instruction on the development of Mg-doped CdSe quantum dot sensitized solar cells (QDSSCs.

Voc enhancement of a solar cell with doped Li+-PbS as the active layer

Science.gov (United States)

Chávez Portillo, M.; Alvarado Pulido, J.; Gallardo Hernández, S.; Soto Cruz, B. S.; Alcántara Iniesta, S.; Gutiérrez Pérez, R.; Portillo Moreno, O.

2018-06-01

In this report, we investigate the fabrication of solar cells obtained by chemical bath technique, based on CdS as window layer and PbS and PbS-Li+-doped as the active layer. We report open-circuit-voltage Voc values of ∼392 meV for PbS and ∼630 meV for PbSLi+-doped, a remarkable enhanced in the open circuit voltage is shown for solar cells with doped active layer. Li+ ion passivate the dangling bonds in PbS-metal layer interface in consequence reducing the recombination centers.

Synthesis of CdS nanorods in soft template under gamma-irradiation.

Science.gov (United States)

Zhao, Bing; Wang, Yanli; Zhang, Haijiao; Jiao, Zheng; Wang, Haobo; Ding, Guoji; Wu, Minghong

2009-02-01

CdS nano material which has a band gap of 2.42 eV at room temperature is a typical II-VII semiconductor having many commercial or potential applications, e.g., light-emitting diodes, solar cell and optoelectronic devices. In this paper, we use a new strategy to synthesize CdS nanorods. CdS nanorods were prepared in soft template under gamma-irradiation though the reaction of cadmium sulphide and thiacetamide (TAA). The formation process and characters of CdS nanorods was investigated in detail by transmission electron microscopy (TEM), electron diffraction (ED) pattern, X-ray powder diffraction (XRD), ultraviolet spectrophotometer (UV) and photoluminescence spectrophotometer (PL). In the experiment we proposed that the irradiation of gamma-ray accelerated the formation of S(2-) under acidic condition (pH = 3) and vinyl acetate (VAc) monomer formed pre-organized nano polymer tubules which were used as both templates and nanoreacters for the growth of CdS nanorods. In this process, we have obtained the CdS polycrystal nanorods with PVAc nano tubules and CdS single-crystal nanorods. The result of X-ray powder diffraction confirms that the crystal type of CdS nanorods is cubic F-43 m (216). The results from transmission electron microscopy and electron diffraction show that the concentrations of reactants and the dose rate of gamma-ray are key to produce appropriate CdS nanorods. Relatively low concentrations (Cd2+: 0.008-0.02 mol/L, Cd2+ : S(2-) = 1 : 2) of reactants and long time (1-2 d) of irradiation in low dose rate (6-14 Gy/min) are propitious to form CdS single-crystal nanorods with small diameter (less than 100 nm) and well length (2-5 microm). UV and PL characterizations show the sample have well optical properties.

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

Science.gov (United States)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Advanced Nanomaterials for High-Efficiency Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Junhong [University of Wisconsin-Milwaukee

2013-11-29

Energy supply has arguably become one of the most important problems facing humankind. The exponential demand for energy is evidenced by dwindling fossil fuel supplies and record-high oil and gas prices due to global population growth and economic development. This energy shortage has significant implications to the future of our society, in addition to the greenhouse gas emission burden due to consumption of fossil fuels. Solar energy seems to be the most viable choice to meet our clean energy demand given its large scale and clean/renewable nature. However, existing methods to convert sun light into electricity are not efficient enough to become a practical alternative to fossil fuels. This DOE project aims to develop advanced hybrid nanomaterials consisting of semiconductor nanoparticles (quantum dots or QDs) supported on graphene for cost-effective solar cells with improved conversion efficiency for harvesting abundant, renewable, clean solar energy to relieve our global energy challenge. Expected outcomes of the project include new methods for low-cost manufacturing of hybrid nanostructures, systematic understanding of their properties that can be tailored for desired applications, and novel photovoltaic cells. Through this project, we have successfully synthesized a number of novel nanomaterials, including vertically-oriented graphene (VG) sheets, three-dimensional (3D) carbon nanostructures comprising few-layer graphene (FLG) sheets inherently connected with CNTs through sp{sup 2} carbons, crumpled graphene (CG)-nanocrystal hybrids, CdSe nanoparticles (NPs), CdS NPs, nanohybrids of metal nitride decorated on nitrogen-doped graphene (NG), QD-carbon nanotube (CNT) and QD-VG-CNT structures, TiO{sub 2}-CdS NPs, and reduced graphene oxide (RGO)-SnO{sub 2} NPs. We further assembled CdSe NPs onto graphene sheets and investigated physical and electronic interactions between CdSe NPs and the graphene. Finally we have demonstrated various applications of these

Evidence for Chemical and Electronic Nonuniformities in the Formation of the Interface of RbF-Treated Cu(In,Ga)Se2 with CdS.

Science.gov (United States)

Nicoara, Nicoleta; Kunze, Thomas; Jackson, Philip; Hariskos, Dimitrios; Duarte, Roberto Félix; Wilks, Regan G; Witte, Wolfram; Bär, Marcus; Sadewasser, Sascha

2017-12-20

We report on the initial stages of CdS buffer layer formation on Cu(In,Ga)Se 2 (CIGSe) thin-film solar cell absorbers subjected to rubidium fluoride (RbF) postdeposition treatment (PDT). A detailed characterization of the CIGSe/CdS interface for different chemical bath deposition (CBD) times of the CdS layer is obtained from spatially resolved atomic and Kelvin probe force microscopy and laterally integrating X-ray spectroscopies. The observed spatial inhomogeneity in the interface's structural, chemical, and electronic properties of samples undergoing up to 3 min of CBD treatments is indicative of a complex interface formation including an incomplete coverage and/or nonuniform composition of the buffer layer. It is expected that this result impacts solar cell performance, in particular when reducing the CdS layer thickness (e.g., in an attempt to increase the collection in the ultraviolet wavelength region). Our work provides important findings on the absorber/buffer interface formation and reveals the underlying mechanism for limitations in the reduction of the CdS thickness, even when an alkali PDT is applied to the CIGSe absorber.

Enhanced Performance of DSSCs Based on the Insertion Energy Level of CdS Quantum Dots

Directory of Open Access Journals (Sweden)

Xiaoping Zou

2014-01-01

Full Text Available Cadmium sulfide (CdS quantum dots (QDs are assembled onto the TiO2 films by chemical bath deposition method (CBD. And the QDs size is controlled by the times of CBD cycles. They are characterized by UV-visible absorption. To avoid the photo corrosion and electrolyte corrosion, CdS and N719 are sequentially assembled onto the nanocrystalline TiO2 films to prepare a CdS/N719 cosensitized photo electrode for the dye-sensitized solar cells. In the structure of TiO2/CdS/N719 electrode, the reorganization of energy levels between CdS and N719 forms a stepwise structure of band-edge levels which is advantageous to the electron injection and hole recovery of CdS and N719 QDs. The open circuit voltage (Voc, short circuit current density (Jsc, and efficiency are increased.

Cytotoxicity and cellular mechanisms involved in the toxicity of CdS quantum dots in hemocytes and gill cells of the mussel Mytilus galloprovincialis

Energy Technology Data Exchange (ETDEWEB)

Katsumiti, A. [CBET Research Group, Dept. Zoology and Animal Cell Biology, Faculty of Science and Technology and Research Centre for Experimental Marine Biology and Biotechnology PIE, University of the Basque Country UPV/EHU, Basque Country (Spain); Gilliland, D. [EU Commission–Joint Research Centre, Institute of Health and Consumer Protection, NSB Unit, Ispra (Italy); Arostegui, I. [Department of Applied Mathematics, Statistics and Operations Research, Faculty of Science and Technology, University of the Basque Country UPV/EHU, Leioa (Spain); Cajaraville, M.P., E-mail: mirenp.cajaraville@ehu.es [CBET Research Group, Dept. Zoology and Animal Cell Biology, Faculty of Science and Technology and Research Centre for Experimental Marine Biology and Biotechnology PIE, University of the Basque Country UPV/EHU, Basque Country (Spain)

2014-08-15

Highlights: • CdS QDs were cytotoxic for mussel hemocytes and gill cells in vitro. • Ionic Cd was the most toxic form, followed by CdS QDs and bulk CdS. • CdS QDs altered oxidative balance and caused DNA damage in mussel cells. • CdS QDs caused a particle-specific immunostimulation on phagocytosis of hemocytes. • Conceptual models for cellular handling and toxicity of CdS QDs are proposed. - Abstract: CdS quantum dots (QDs) show a great promise for treatment and diagnosis of cancer and for targeted drug delivery, due to their size-tunable fluorescence and ease of functionalization for tissue targeting. In spite of their advantages it is important to determine if CdS QDs can exert toxicity on biological systems. In the present work, cytotoxicity of CdS QDs (5 nm) at a wide range of concentrations (0.001–100 mg Cd/L) was screened using neutral red (NR) and thiazolyl blue tetrazolium bromide (MTT) assays in isolated hemocytes and gill cells of mussels (Mytilus galloprovincialis). The mechanisms of action of CdS QDs were assessed at sublethal concentrations (0.31–5 mg Cd/L) in the same cell types through a series of functional in vitro assays: production of reactive oxygen species (ROS), catalase (CAT) activity, DNA damage, lysosomal acid phosphatase (AcP) activity, multixenobiotic resistance (MXR) transport activity, Na-K-ATPase activity (only in gill cells) and phagocytic activity and damage to actin cytoskeleton (only in hemocytes). Exposures to CdS QDs lasted for 24 h and were performed in parallel with exposures to bulk CdS and ionic Cd. Ionic Cd was the most toxic form to both cell types, followed by CdS QDs and bulk CdS. ROS production, DNA damage, AcP activity and MXR transport were significantly increased in both cell types exposed to the 3 forms of Cd. CAT activity increased in hemocytes exposed to the three forms of Cd while in gill cells only in those exposed to ionic Cd. No effects were found on hemocytes cytoskeleton integrity. Effects on

Electronic and optical properties of CdS films deposited by evaporation

Energy Technology Data Exchange (ETDEWEB)

Huang, L.; Wei, Z.L.; Zhang, F.M.; Wu, X.S., E-mail: xswu@nju.edu.cn

2015-11-05

CdS films grown by thermal evaporation on glass substrate under ultra-high vacuum are prepared with varying the growth temperature and atmosphere environment. The minimum resistivity of the films is as low as 2.0 Ω·cm, and the carrier density even reaches 1.6 × 10{sup 18} cm{sup −3}, which is much less than that prepared by the chemical bath deposition (CBD) method. The transmittance and band gap increase with the set the argon atmosphere and the growth temperature in the optimum value. Our results indicate the CdS films grown by evaporation at high vacuum may be more suitable for the application in optoelectronic devices, such as the solar cell materials. - Highlights: • CdS films are grown by the ultra-high vacuum evaporation. • CdS film here with the high carrier density reaches to 10{sup 18} cm{sup −3} is obtained. • The film has low resistivity, which is as low as 2 Ω∙ cm. • The optical band gap become wider from 2.42 eV to 2.54 eV.

Phosphonate self-assembled monolayers as organic linkers in solid-state quantum dot sensetized solar cells

KAUST Repository

Ardalan, Pendar

2010-06-01

We have employed X-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV-vis) spectroscopy, infrared (IR) spectroscopy, water contact angle (WCA) measurements, ellipsometry, and electrical measurements to study the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state quantum dot sensitized solar cells (QDSSCs). ∼2 to ∼6 nm size CdS quantum dots (QDs) were grown on the SAM-passivated TiO2 surfaces by successive ionic layer adsorption and reaction (SILAR). Our results show differences in the bonding of the CdS QDs at the TiO2 surfaces with a SAM linker. Moreover, our data indicate that presence of a SAM increases the CdS uptake on TiO2 as well as the performance of the resulting devices. Importantly, we observe ∼2 times higher power conversion efficiencies in the devices with a SAM compared to those that lack a SAM. © 2010 IEEE.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

Science.gov (United States)

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

Science.gov (United States)

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Optical band gap tuning and electrical properties of polyaniline and its nanocomposites for hybrid solar cell application

Science.gov (United States)

Singh, R.; Choudhary, R. B.; Kandulna, R.

2018-05-01

Hcl doped conducting polyaniline-CdS nanocomposite has been prepared via In-situ polymerization in which cadmium nitrate was used as a source for cadmium. The structural morphology was investigated using FESEM and the presence of fibrous polyaniline and CdS nanoparticles. The synthesis of CdS and polyaniline was confirmed using the XRD analysis. I-V characteristic was used to explore the electrical behavior of PANI and its nanocoposites. Optical properties were studied and minimum band gap with highest band absorbance was found for synergistic concentration PANI-CdS (10%) for solar cells application.

Effect of Organic and Inorganic Passivation in Quantum-Dot-Sensitized Solar Cells.

Science.gov (United States)

de la Fuente, Mauricio Solis; Sánchez, Rafael S; González-Pedro, Victoria; Boix, Pablo P; Mhaisalkar, S G; Rincón, Marina E; Bisquert, Juan; Mora-Seró, Iván

2013-05-02

The effect of semiconductor passivation on quantum-dot-sensitized solar cells (QDSCs) has been systematically characterized for CdS and CdS/ZnS. We have found that passivation strongly depends on the passivation agent, obtaining an enhancement of the solar cell efficiency for compounds containing amine and thiol groups and, in contrast, a decrease in performance for passivating agents with acid groups. Passivation can induce a change in the position of TiO2 conduction band and also in the recombination rate and nature, reflected in a change in the β parameter. Especially interesting is the finding that β, and consequently the fill factor can be increased with the passivation treatment. Applying this strategy, record cells of 4.65% efficiency for PbS-based QDSCs have been produced.

Optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirose, Y.; Warasawa, M. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Takakura, K. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Kimura, S. [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, S.F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Ohyama, H. [Department of Information, Communication and Electrical Engineering, Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Sugiyama, M., E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

2011-08-31

The optical and electrical properties of electron-irradiated Cu(In,Ga)Se{sub 2} (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 x 10{sup 18} cm{sup -2}. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing J{sub SC} and increasing R{sub s} reflected the influence of irradiated ZnO:Al, and decreasing V{sub OC} and increasing R{sub sh} mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.

Improving the photovoltaic parameters in Quantum dot sensitized solar cells through employment of chemically deposited compact titania blocking layer

Energy Technology Data Exchange (ETDEWEB)

Rajendra Prasad, M.B., E-mail: rajendraprasadmb75@gmail.com [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India); National Defence Academy, Khadakwasla, Pune, 411023 (India); Kadam, Vishal [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India); Joo, Oh-Shim [Korea Institute of Science and Technology, PO Box No. 131, Chongryang, Seoul, 130-650 (Korea, Republic of); Pathan, Habib M. [Advanced Physics Laboratory, Department of Physics, SavitibaiPhule Pune University, Pune, 411007 (India)

2017-06-15

Incorporation of compact blocking layer at the Transparent Conducting Oxide (TCO)/Electrolyte interface is an effective method to improve the device performance in QDSSC through mitigation of electron recombinations at this interface. This paper reports the most facile and cost effective method of depositing a rutile titania Compact Layer (CL) over Fluorine doped Tin Oxide (FTO) substrate and its application in titania based CdS QD sensitized solar cells. The deposited compact layers are characterized to study their structural, optical, morphological and electrochemical properties using X-Ray Diffractometry, UV–Visible spectroscopy, Scanning electron microscopy, Cyclic Voltammetry and Contact Angle measurements. Sandwich solar cells are fabricated using these CL based electrodes and characterized using Electrochemical Impedance Spectroscopy, Open Circuit Voltage Decay and J-V characteristics. The CL incorporated CdS QDSSC showed more than 100% increase in the photoconversion efficiency (1.68%) as compared to its bare FTO counterpart (0.73%) proving the efficacy of employed strategy. - Highlights: • Deposited titania compact layer by a facile room temperature chemical bath method. • Employed this to mitigate back electron transfer at TCO/Electrolyte interface. • Compact layer incorporation has improved the solar cell performance by 130%.

Influence of the layer parameters on the performance of the CdTe solar cells

Science.gov (United States)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

Surface Passivation of CIGS Solar Cells Using Gallium Oxide

KAUST Repository

Garud, Siddhartha

2018-02-27

This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

UNDERFLIGHT CALIBRATION OF SOHO/CDS AND HINODE/EIS WITH EUNIS-07

Energy Technology Data Exchange (ETDEWEB)

Wang Tongjiang; Brosius, Jeffrey W. [Institute for Astrophysics and Computational Sciences (IACS) in the Department of Physics, Catholic University of America, 620 Michigan Avenue NE, Washington, DC 20064 (United States); Thomas, Roger J.; Rabin, Douglas M.; Davila, Joseph M. [NASA Goddard Space Flight Center, Code 671, Greenbelt, MD 20771 (United States); Young, Peter R. [College of Science, George Mason University, 4400 University Drive, Fairfax, VA 22030 (United States); Del Zanna, Giulio, E-mail: tongjiang.wang@nasa.gov [DAMTP, Centre for Mathematical Sciences, University of Cambridge, Wilberforce Road, Cambridge, CB3 0WA (United Kingdom)

2011-12-01

Flights of Goddard Space Flight Center's Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS) sounding rocket in 2006 and 2007 provided updated radiometric calibrations for Solar and Heliospheric Observatory/Coronal Diagnostic Spectrometer (SOHO/CDS) and Hinode/Extreme Ultraviolet Imaging Spectrometer (Hinode/EIS). EUNIS carried two independent imaging spectrographs covering wavebands of 300-370 A in first order and 170-205 A in second order. After each flight, end-to-end radiometric calibrations of the rocket payload were carried out in the same facility used for pre-launch calibrations of CDS and EIS. During the 2007 flight, EUNIS, SOHO/CDS, and Hinode/EIS observed the same solar locations, allowing the EUNIS calibrations to be directly applied to both CDS and EIS. The measured CDS NIS 1 line intensities calibrated with the standard (version 4) responsivities with the standard long-term corrections are found to be too low by a factor of 1.5 due to the decrease in responsivity. The EIS calibration update is performed in two ways. One uses the direct calibration transfer of the calibrated EUNIS-07 short wavelength (SW) channel. The other uses the insensitive line pairs, in which one member was observed by the EUNIS-07 long wavelength (LW) channel and the other by EIS in either the LW or SW waveband. Measurements from both methods are in good agreement, and confirm (within the measurement uncertainties) the EIS responsivity measured directly before the instrument's launch. The measurements also suggest that the EIS responsivity decreased by a factor of about 1.2 after the first year of operation (although the size of the measurement uncertainties is comparable to this decrease). The shape of the EIS SW response curve obtained by EUNIS-07 is consistent with the one measured in laboratory prior to launch. The absolute value of the quiet-Sun He II 304 A intensity measured by EUNIS-07 is consistent with the radiance measured by CDS NIS in quiet regions

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

Science.gov (United States)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Role of the buffer solution in the chemical deposition of CdS films for CIGS solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Lee, Sooho; Kim, Donguk; Baek, Dohyun; Hong, Byoungyou; Yi, Junsin; Lee, Jaehyeong [Sungkyunkwan University, Suwon (Korea, Republic of); Park, Yongseob [Chosun College of Science and and Technology, Gwangju (Korea, Republic of); Choi, Wonseok [Hanbat National University, Daejeon (Korea, Republic of)

2014-05-15

In this work, the effects of NH{sub 4}Ac on the structural and the electro-optical properties of CdS films were investigated. CdS thin films were deposited on soda-lime glass and indium-tin-oxide (ITO) coated glass from a chemical bath containing 0.025 M cadmium acetate, 0 M ∼ 0.2 M ammonium acetate, 0.5 M thiourea, and ammonia. Cadmium acetate was the cadmium source, ammonium acetate served as a buffer, ammonia was the complexing agent, and thiourea was the source of sulfur. A commonly- available chemical bath deposition system was successfully modified to obtain precise control over the pH of the solution at 75 .deg. C during the deposition. Chemically deposited CdS films were studied by using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), optical transmittance, and electrical resistivity measurements.

Nano-architecture based photoelectrochemical water oxidation efficiency enhancement by CdS photoanodes

Science.gov (United States)

Pareek, Alka; Kim, Hyun Gyu; Paik, Pradip; Joardar, Joydip; Borse, Pramod H.

2017-02-01

In the present work, 2D nanostructuring has been utilized to impart an efficiency improvement to the hexagonal phase CdS films for the photoelectrochemical (PEC) cells those were deposited by spray pyrolysis technique. By controlling the aerosol droplet- size, population and impingement time during the spray pyrolysis deposition, various nano-features viz. randomly aligned nanorods, nanotubes and nanowires of CdS has been demonstrated for the first time. A growth mechanism has been proposed to predict the temporal evolution of the nanostructures. The prominent nanoscale structures show improved optical properties in the visible range of solar spectrum. The structural studies validate the morphological differences of nanostructures in terms of the texture coefficient analysis as well as 2D micro x-ray diffraction imaging. Electrochemical characterization is carried out to understand the effect of nanostructuring on the PEC performance of the CdS photoanodes in the sulphide (0.1 M Na2S  +  0.02 M Na2SO3) electrolyte at applied bias of 0.2 V (versus SCE). The evolution of morphology from randomly aligned rods to nanowire is responsible for improved photocurrent (3.5 times). CdS film morphology can be tuned to nanotubes, nano- rose buds and nanorod bunches even by doping Zn2+ ions in CdS lattice. Nano-structuring of doped CdS has shown enhanced performance of the photoanodes. The nanotubes structures yielded highest photocurrent density of 1.6 mA cm-2. Whereas modifying the 2D-nanostructured CdS film by simple MoO3 spray coating yields the photocurrent enhancement to 2.1 mA cm-2.

Preliminary Results from Coordinated UVCS-CDS-Ulysses Observations

Science.gov (United States)

Parenti, S.; Bromage, B. J.; Poletto, G.; Suess, S. T.; Raymond, J. C.; Noci, G.; Bromage, G. E.; Rose, M. Franklin (Technical Monitor)

2001-01-01

The June 2000 quadrature between the Sun, Earth, and Ulysses took place with Ulysses at a distance of 3.35 AU from the Sun and at heliocentric latitude 58.2 deg south, in the southeast quadrant. This provided an opportunity to observe the corona close to the Sun with Coronal Diagnostic Spectrometer (CDS) and Ultraviolet Coronograph Spectrometer (UVCS) and, subsequently, to sample the same plasma when it reached Ulysses. Here we focus on simultaneous observations of UVCS and CDS made on June 12, 13, 16 and 17. The UVCS data were acquired at heliocentric altitudes ranging from 1.6 to 2.2 solar radii, using different grating positions, in order to get a wide wavelength range. CDS data consisted of Normal Incidence Spectrometer (NIS) full wavelength rasters of 120" x 150" centered at altitudes up to 1.18 solar radii, together with Grazing Incidence Spectrometer (GIS) 4" x 4" rasters within the same field of view, out to 1.2 solar radii. The radial direction to Ulysses passed through a high latitude streamer, throughout the 4 days of observations, Analysis of the spectra taken by UVCS shows a variation of the element abundances in the streamer over our observing interval: however, because the observations were in slightly different parts of the streamer on different days, the variation could be ascribed either to a temporal or spatial effect. The oxygen abundance, however, seems to increase at the edge of the streamer, as indicated by previous analyses. This suggests the variation may be a function of position within the streamer, rather than a temporal effect. Oxygen abundances measured by SWICS on Ulysses are compared with the CDS and UVCS results to see whether changes measured in situ follow the same pattern.

Influence of the optical window on the performance of TCO/CdS/CdTe solar cells

Energy Technology Data Exchange (ETDEWEB)

Gordillo, G [Universidad Nacional de Colombia, Bogota (Colombia). Dept. de Fisica; Grizalez, M [Univ. de la Amazonia, Florencia (Colombia); Moreno, L C [Dept. de Quimica, Univ. Nacional de Colombia, Bogota (Colombia); Landazabal, F [Dept. de Fisica, Univ. de Cundinamarca, Fusagasuga (Colombia)

2000-07-01

Thin film solar cells, with structure TCO/CdS/CdTe/Cu, were fabricated using the transparent conducting oxides (TCOs) SnO{sub 2}:F, deposited by spray pyrolysis, and ZnO, deposited by reactive evaporation, as transparent electrodes. The TCO/CdS system with the CdS layer deposited by CBD (chemical bath deposition) method acts in the cell as an optical window and the CdTe deposited by CSS (close space sublimation) method acts as absorber layer, being the unique active layer of the cell. Details of the technological aspects of the solar cells fabrication as well as a discussion to explain the effect of the TCO layer on the solar cell performance will be given. The best results obtained in this work were: open circuit voltage of 0.57 V, short circuit current of 13 mA/cm{sup 2}, fill factor of 0.63 and conversion efficiency of 5.8%. (orig.)

Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of next-generation thin-film solar cell module manufacturing technology - Development of CIS solar cell module manufacturing technology - Development of high-quality film enlargement technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi module no seizo gijutsu kaihatsu / CIS taiyo denchi module no seizo gijutsu kaihatsu / kohinshitsumaku no daimensekika gijutsu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

The project aims to establish a manufacturing process that enables both high-quality CuInSe{sub 2} (CIS) film solar cell enlargement and cost reduction and to develop a device structure which uses less heavy metal for the purposes of increasing the CIS thin-film solar cell size and efficiency and decreasing environmental impact. Several element technologies have been established for increasing the area of high-efficiency Cu(In, Ga)Se{sub 2} (CIGS) solar cells. Concerning the enlargement of the photoabsorption layer which is to assume the most important role, it is found that a high-quality CIGS film, which is near homogeneous though within a 10cm times 10cm area, is fabricated by an in-line vapor deposition method. As for dead area reduction and high-speed patterning, it is found that laser scribing works effectively in the patterning of the window layer and photoabsorption layer. As for reduction in the use of heavy metal, a high efficiency of 16.2% is attained in a cell not using a CdS film as expected in the case of a cell using a CdS film, this thanks to a CIGS film surface reforming technique. The technique of junction formation for CIGS solar cells is improved, and then a true efficiency of 18.5% is achieved. (NEDO)

Sequential electro-deposition of Bi{sub 2}S{sub 3}/CdS films as co-sensitizer photoanodes for liquid junction solar cell

Energy Technology Data Exchange (ETDEWEB)

Jana, Atanu; Hazra, Prasenjit; Hazra, Mukul; Datta, Jayati, E-mail: jayati_datta@rediffmail.com

2016-11-01

In this investigation multilayered conjugate films are formulated with Bi{sub 2}S{sub 3} and CdS nanoparticles (NPs) on FTO glass substrate. Thin layer Bi{sub 2}S{sub 3} was deposited and subsequently covered with various levels of CdS coating. Optical properties and XRD analysis of the films show existence of both the compound phases. The morphology of the films studied through electron microscopy reveals coverage of spherical CdS NPs on the network of Bi{sub 2}S{sub 3} NPs. The electrochemical impedance records and performances output characteristics of the n-type films show that the most efficient co-sensitizer matrix is produced with deep coating of CdS on thin layer of Bi{sub 2}S{sub 3}. - Highlights: • Multilayered Bi{sub 2}S{sub 3}/CdS conjugate films are formulated on FTO glass substrate. • Photo-degradation of Bi{sub 2}S{sub 3} is restricted by the coating of CdS layer. • High level of Cd coating on thin layer of Bi{sub 2}S{sub 3} have shown appreciable photocurrent output. • Photo-conversion efficiency of 0.93% is observed for the best conjugate film.

A simple structure of Cu2ZnSnS4/CdS solar cells prepared by sputtering

Science.gov (United States)

Li, Zhishan; Wang, Shurong; Ma, Xun; Yang, Min; Jiang, Zhi; Liu, Tao; Lu, Yilei; Liu, Sijia

2017-12-01

In this work, Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by annealing of sputtered ZnS/Sn/CuS precursors at 580 ℃ for 15 min. As a try, the CZTS solar cells were fabricated using simple structure of Mo-coated SLG/CZTS/CdS/Al and traditional structure of Mo-coated SLG/CZTS/CdS/i-ZnO/In2O3:SnO2 (ITO)/Al, respectively. The results show that the CZTS device with simple structure can achieve same level of the open circuit voltage (Voc) compared with that of traditional structure. In addition, the power conversion efficiency of 2.95% and 3.59% were obtained with simple structure and traditional structure, respectively. The CZTS solar cell with simple structure provides a promising way and an easy process to prepare high-performance CZTS thin film solar cells which is available to large-scale industrial production in the future.

Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

Directory of Open Access Journals (Sweden)

Mohd Sabri Mohd Ghazali

2011-09-01

Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

Open Photoacoustic Cell Configuration Applied to the Thermal Characterization of Liquid CdS Nanocomposites

Science.gov (United States)

Faraji, Nastaran; Mahmood Mat Yunus, W.; Kharazmi, Alireza; Saion, Elias; Behzad, Kasra

2014-01-01

CdS nanofluids were prepared by the gamma-radiation method at different radiation doses. The samples were characterized by UV-Vis spectroscopy and transmission electron microscopy. The open cell photoacoustic technique was used to measure the thermal effusivity of the CdS nanocomposites. In this technique a He-Ne laser was used as the excitation source and was operated at 632.8 nm with an output power of 70 mW. The precision and accuracy of this technique were initially established by measuring the thermal effusivity of distilled water and ethylene glycol. The thermal-effusivity values of these two samples were found to be close to the values reported in the literature. The thermal effusivity of CdS nanofluids decreased from (0.453 to 0.268) with increased dosage of gamma radiation.

Achievement report for fiscal 1992 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on forbidden band width optimization); 1992 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Kinsei taifuku no saitekika no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1993-03-01

Research is carried out on technologies concerning CuInSe{sub 2} thin-film solar cell manufacturing, thin film formation, thin film characterization, CdS, (CdZn)S formation, CuInSe{sub 2} single junction, analysis of the a-Si/CuInSe{sub 2} tandem solar cell operating theory, etc. In relation with the encapsulated selenization method for film formation for CuInSe{sub 2} thin-film solar cells, film constitution, film thickness, selenization temperature, etc., are studied for optimization. In relation with the vaporized selenization method, vaporized selenization is tested in a vacuum chamber aiming at improved homogeneity and reproducibility. In research on CdS and (CdZn)S which are window layer materials for CuInSe{sub 2} thin-film solar cells, CdS thin films are formed in a solution growth method using CdSO{sub 4} and (NH{sub 2}){sub 2}CS. In relation with the solution growth of the (CdZn)S crystal film, control of the Zn content in the film is now practicable. In the study of a-Si/CuInSe{sub 2} tandem solar cells, an analytical program is formulated, and calculation is made concerning the impacts of CuInSe{sub 2} forbidden band width and a-Si i-layer thickness. (NEDO)

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Photoluminescence of Cu(In,Ga)Se2 in the solar cell preparation process

International Nuclear Information System (INIS)

Sho, Shirakata; Shinji, Yudate; Jyunji, Honda; Naoki, Iwado

2010-01-01

Full text : Sequential step by step photoluminescence (PL) measurements have been carried out on Cu(In,Ga)Se 2 (CIGS) films just after each thin-film processes for the fabrication of the CIGS solar cell. These include, (i) the CIGS film deposition on the Mo-coated soda-lime glass substrate by three-stage method (CIGS/Mo/SLG), (ii) the chemical-bath deposition (CBD) of CdS buffer layer, (iii) deposition of undoped ZnO window layer by RF sputtering, (iv) deposition of Al doped ZnO high-conductive window layer by RF sputtering, (v) Al grid electrode deposition for the CIGS solar cell, and (vi) the mechanical scribing for the electrical isolation of small test cells. Roomtemperature PL measurements have been done with the excitation of a He-Ne laser (632.8 nm, 1 mW) focused on the sample surface to 0.2 mm diameter. PL was dispersed by a polycromator (Horiba: MicroHR) and detected by a cooled InGaAs multichannel detector (1024 pixels). In order to study the uniformity of PL within CIGS films, the two dimensional PL spectrum mapping measurement has been done (0.4-0.6 mm step) using an x-y stage operating in the raster scanning mode. Acquisition time of one PL spectrum was 1 s. Once the fresh CIGS film is exposed to the air, intensity of the near-band-edge PL decreases slowly with time. After few days, PL intensity was one order of magnitude weaker than its initial value. Thus, PL measurement was performed just after the deposition. It was shown that PL spectra of CIGS films taken for each process in the CIGS solar cell preparation. PL of the CIGS film exhibited nearband-edge peak at 1.18 eV. The slight increase of PL intensity was observed after depositions of CdS and ZnO films. After the high conductive ZnO:Al deposition, PL intensity decreases to one third of the initial PL intensity of the fresh CIGS film. No change has been observed with respect to the line shape of PL peaks during the process. In the CIGS solar cell (open circuit condition), PL intensity recovers

Preparation of CdS nanoparticels with spin-coating assisted successive ionic layer reaction and their photoelectrochemical properties

Directory of Open Access Journals (Sweden)

Bao SUN

2017-10-01

Full Text Available In order to settle the problems in the traditional SILAR method for CdS deposition, such as smaller particles and being difficult to enhance the sensitive layers, an improved spin-coating assisted successive ionic layer reaction method (S-SILR substituted for the traditional SILAR method is used to deposit the CdS nanocrystals. The comparison between the improved and traditional methods is studied after depositing the CdS nanocrystals onto the ZnO nanorod arrays with the two approaches. Different analysis methods, SEM, XRD, UV-vis and the transit photocurrent measurement are conducted to characterize the morphologies and structures of the samples, as well as investigating the light absorption properties, and the photoelectric conversion performance of the electrodes. The results indicate that the CdS nanocrystals photosensitive layers could be totally coated onto the ZnO nanorod arrays more easily by the improved S-SILR method; the light absorption properties and the photoelectric conversion performance of the electrodes prepared by the improved S-SILR method are more excellent compared with those electrodes prepared by the traditional SILAR method. The improvement of the CdS deposition method has certain guiding significance in enhancing the operability of the preparation technology and the photovoltaic performance of the solar cells.

Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

International Nuclear Information System (INIS)

Kundu, Sambhu; Olsen, Larry C.

2005-01-01

Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

Characteristics and optimization of ZnO/CdS/CZTS photovoltaic solar cell

Science.gov (United States)

Gueddim, A.; Bouarissa, N.; Naas, A.; Daoudi, F.; Messikine, N.

2018-02-01

In the present contribution a ZnO/CdS/CZTS structure with new thicknesses of the different layers has been proposed using solar cell capacitance simulator. The objective of this study is the improvement of the device efficiency while varying the thickness of the various layers and the CZTS system energy band-gap. Our results showed that cells with optimal values of thicknesses of 0.1, 0.02 and 1 µm for ZnO window layer, CdS buffer layer and CZTS absorber layer, respectively give conversion efficiency of 23.56%. Furthermore, the higher performance of these cells is obtained for a CZTS band-gap energy of about 1.45 eV. The obtained conversion efficiency is comparable to those previously reported in the literature.

Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS2 thin film solar cells

International Nuclear Information System (INIS)

Kaufmann, C.A.

2002-01-01

A CulnS 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering the energy band line-up at the heterojunction interface. Motivated through environmental concern and EU legislation it is felt necessary to substitute this potentially toxic layer by an alternative, Cd-free component. This thesis investigates the suitability of various Zn- and In-compounds, in particular In(OH,O) x S y , as alternative buffer layer materials using CBD. Initial experiments were carried out depositing Zn-based compounds from aqueous solutions. Characterization of the layers, the solution and the processed solar cells was performed. This thesis focuses on the investigation of the CBD process chemistry for the deposition of In-compound thin films. A careful study of the morphology and composition of the deposited thin films was conducted using electron microscopy (SEM, HREM), elastic recoil detection analysis, X-ray photoelectron spectroscopy and optical transmission spectroscopy. This allowed conclusions concerning the nucleation and film growth mechanism from the chemical bath. Connections between bath chemistry, different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) x S y or In(OH,O) x S y . In the case of In(OH,O) x S y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell

Influence of defects and nanoscale strain on the photovoltaic properties of CdS/CdSe nanocomposite co-sensitized ZnO nanowire solar cells

International Nuclear Information System (INIS)

Jung, Kyungeun; Lee, Jeongwon; Kim, Young-Min; Kim, Joosun; Kim, Choong-Un; Lee, Man-Jong

2016-01-01

Highlights: • CdSe/CdS nanocomposites were coated on ZnO nanowires using solution processes. • In situ CdSe/CdS co-sensitizers resulted in a 3-fold increase in efficiency. • Nano-strain analyses at interfaces and CdS layers were performed. • Drastic decrease of nano-strain in CdSe/CdS was observed. • Relaxed nano-strain was attributed to the increase of efficiency. - Abstract: This paper reports the mechanism of the power conversion efficiency (PCE) improvement in the ZnO nanowires (NW) based solar cells by using CdS/CdSe nanocomposite sensitizers instead of a single CdS quantum-dot (QD) sensitization layer. Two cells with the different type of the sensitization layers were essentially consists of the high-density ZnO nanowire (NW) and a sensitization layer of either CdS-QD or CdS/CdSe nanocomposite, which were produced by an in-situ sequential assembly process of both ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD). Measurement on the PCE revealed that the cell with CdS/CdSe nanocomposite showed a three-fold increase in PCE compared to the one with a CdS-QD layer. While such improvement in PCE appeared to be consistent with the step-wise band alignment mechanism suggested for the type-II heterojunction of CdSe/CdS/ZnO structures, our microstructural analysis of the cell structure yielded results strongly indicating that the reduction of both interface defects and misfit strain in the CdS lattices plays an additional role on the PCE improvement. Analyses on the interface and the CdS crystallinity using high-resolution electron microscopy (HRTEM) combined with the geometric phase analysis (GPA) revealed that the addition of CdSe effectively reduced the lattice strain in the CdS without introducing misfit dislocations at CdS/CdSe interface, probably owing to Se anion diffusion (or exchange) to the defective SILAR CdS layer during the CBD process. Although an entire enhancement in PCE by the addition of CdSe layer seen in our

Development of CIGS2 thin film solar cells

International Nuclear Information System (INIS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

Research and development of CuIn 1-x Ga x Se 2-y S y (CIGSS) thin-film solar cells on ultralightweight flexible metallic foil substrates is being carried out at FSEC PV Materials Lab for space applications. Earlier, the substrate size was limited to 3 cm x 2.5 cm. Large-area sputtering systems and scrubber for hydrogen selenide and sulfide have been designed and constructed for preparation of CIGSS thin-films on large (15 cm x 10 cm) substrates. A selenization/sulfurization furnace donated by Shell (formerly Siemens) Solar has also been refurbished and upgraded. The sputtering target assembly design was modified for proper clamping of targets and effective cooling. A new design of the magnetic assembly for large-area magnetron sputtering sources was implemented so as to achieve uniform deposition on large area. Lightweight stainless steel foil and ultralightweight titanium foil substrates were utilized to increase the specific power of solar cells. Sol-gel derived SiO 2 layers were coated on titanium foil by dip coating method. Deposition parameters for the preparation of molybdenum back contact layers were optimized so as to minimize the residual stress as well as reaction with H 2 S. Presently large (15 cm x 10 cm) CuIn 1-x Ga x S 2 (CIGS2) thin film solar cells are being prepared on Mo-coated titanium and stainless steel foil by sulfurization of CuGa/In metallic precursors in diluted Ar:H 2 S(4%). Heterojunction partner CdS layers are deposited by chemical bath deposition. The regeneration sequence of ZnO/ZnO:Al targets was optimized for obtaining consistently good-quality, transparent and conducting ZnO/ZnO:Al bilayer by RF magnetron-sputter deposition. Excellent facilities at FSEC PV Materials Lab are one of its kinds and could serve as a nucleus of a small pilot plant for CIGSS thin film solar cell fabrication

New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

Science.gov (United States)

Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

2017-11-01

Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

Directory of Open Access Journals (Sweden)

Lin Li

2014-01-01

Full Text Available Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS quantum dot solar cells (QDSCs are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion, open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells

Science.gov (United States)

Chadel, Meriem; Chadel, Asma; Moustafa Bouzaki, Mohammed; Aillerie, Michel; Benyoucef, Boumediene; Charles, Jean-Pierre

2017-11-01

Performances of ZnO/ZnS/CZTSSe polycrystalline thin film solar cells (Copper Zinc Tin Sulphur Selenium-solar cell) were simulated for different thicknesses of the absorber and ZnS buffer layers. Simulations were performed with SCAPS (Solar Cell Capacitance Simulator) software, starting with actual parameters available from industrial data for commercial cells processing. The influences of the thickness of the various layers in the structure of the solar cell and the gap profile of the CZTSSe absorber layer on the performance of the solar cell were studied in detail. Through considerations of recent works, we discuss possible routes to enhance the performance of CZTSSe solar cells towards a higher efficiency level. Thus, we found that for one specific thickness of the absorber layer, the efficiency of the CZTSSe solar cell can be increased when a ZnS layer replaces the usual CdS buffer layer. On the other hand, the efficiency of the solar cell can be also improved when the absorber layer presents a grad-gap. In this case, the maximum efficiency for the CZTSSe cell was found equal to 13.73%.

Enhanced photoelectrochemical properties of TiO2 nanorod arrays decorated with CdS nanoparticles

International Nuclear Information System (INIS)

Xie, Zheng; Wang, Weipeng; Liu, Can; Li, Zhengcao; Liu, Xiangxuan; Zhang, Zhengjun

2014-01-01

TiO 2 nanorod arrays (TiO 2 NRAs) sensitized with CdS nanoparticles were fabricated via successive ion layer adsorption and reaction (SILAR), and TiO 2 NRAs were obtained by oxidizing Ti NRAs obtained through oblique angle deposition. The TiO 2 NRAs decorated with CdS nanoparticles exhibited excellent photoelectrochemical and photocatalytic properties under visible light, and the one decorated with 20 SILAR cycles CdS nanoparticles shows the best performance. This can be attributed to the enhanced separation of electrons and holes by forming heterojunctions of CdS nanoparticles and TiO 2 NRAs. This provides a promising way to fabricate the material for solar energy conversion and wastewater degradation. (paper)

Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

International Nuclear Information System (INIS)

Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

2013-01-01

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method

Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

Energy Technology Data Exchange (ETDEWEB)

Sun, Yunfei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Yang, Lili; Cao, Jian [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Gao, Ming [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Zhang, Zhiqiang; Wang, Zhe [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Song, Hang [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2013-04-15

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Science.gov (United States)

Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Energy Technology Data Exchange (ETDEWEB)

Novruzov, V.D. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Keskenler, E.F., E-mail: keskenler@gmail.com [Department of Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize (Turkey); Tomakin, M. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Kahraman, S. [Department of Physics, Mustafa Kemal University, Hatay (Turkey); Gorur, O. [Department of Physics, Abant Izzet Baysal University, Bolu (Turkey)

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu{sub 2}S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

Energy Technology Data Exchange (ETDEWEB)

Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

2013-10-05

Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

Improving the optical and crystalline properties on CdS thin films growth on small and large area by using CBD technique

Energy Technology Data Exchange (ETDEWEB)

Albor A, M. L.; Flores M, J. M.; Hernandez V, C.; Contreras P, G.; Mejia G, C.; Rueda M, G. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Unidad Profesional Adolfo Lopez Mateos, Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Departamento de Formacion Basica, Unidad Profesional Adolfo Lopez Mateos, 07738 Ciudad de Mexico (Mexico)

2016-11-01

CdS polycrystalline thin films have been used as window layer in solar cells; the optical and crystalline quality of the CdS-partner plays and important role in the photovoltaic device performance. CdS thin films were deposited by using Chemical Bath Deposition. The SnO{sub 2}:F substrates used were chemically treated with HCl (0.1 M) and others were thermally annealed in different atmospheres (Ar and O{sub 2}). The physical properties of CdS thin films were influenced by the HCl treatment, position, size and the substrates movement inside the reaction beaker. The CdS samples were deposited in areas of 4 cm{sup 2}, 50 cm{sup 2} and 100 cm{sup 2}. Finally CdS thin films with thickness of 35-300 nm with good optical and crystalline quality on a uniform morphology were obtained. Transmittance values were obtained for all samples about 85-90 % with an average of gap energy of 2.5 eV. The structural characteristics of the samples were determined by the X-ray diffraction patterns, by means of a D-500 Siemens X-ray system. (Author)

Synthesis of Copper-Antimony-Sulfide Nanocrystals for Solution-Processed Solar Cells.

Science.gov (United States)

Suehiro, Satoshi; Horita, Keisuke; Yuasa, Masayoshi; Tanaka, Tooru; Fujita, Katsuhiko; Ishiwata, Yoichi; Shimanoe, Kengo; Kida, Tetsuya

2015-08-17

The p-type nanocrystals (NCs) of copper-based chalcogenides, such as CuInSe2 and Cu2ZnSnS4, have attracted increasing attention in photovoltaic applications due to their potential to produce cheap solution-processed solar cells. Herein, we report the synthesis of copper-antimony-sulfide (CAS) NCs with different crystal phases including CuSbS2, Cu3SbS4, and Cu12Sb4S13. In addition, their morphology, crystal phase, and optical properties were characterized using transmission electron microscopy, X-ray diffractometry, UV-vis-near-IR spectroscopy, and photoemission yield spectroscopy. The morphology, crystal phase, and electronic structure were significantly dependent on the chemical composition in the CAS system. Devices were fabricated using particulate films consisting of CAS NCs prepared by spin coating without a high-temperature treatment. The CAS NC-based devices exhibited a diode-like current-voltage characteristic when coupled with an n-type CdS layer. In particular, the CuSbS2 NC devices exhibited photovoltaic responses under simulated sunlight, demonstrating its applicability for use in solution-processed solar cells.

Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province and School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi' an 710300 (China); Wang, Ye Feng [School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi' an 710062 (China); Wei, Dong; Chen, Yu; Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province and School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Cui, Bin [School of Chemistry and Materials Science, Northwestern University, Xi' an 710620 (China)

2016-06-20

A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn{sup 2+} is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the “loss-in-potential,” inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.

C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

Directory of Open Access Journals (Sweden)

A. Gonzalez-Cisneros

2013-01-01

Full Text Available In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010. The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film and the close-spaced vapor transport (for CdTe film techniques.

Improved performance of CdSe/CdS/PbS co-sensitized solar cell with double-layered TiO2 films as photoanode

Science.gov (United States)

Zhang, Xiaolong; Lin, Yu; Wu, Jihuai; Jing, Jing; Fang, Biaopeng

2017-07-01

Improving the photovoltaic performance of CdSe/CdS/PbS co-sensitized double-layered TiO2 solar cells is reported. Double-layered TiO2 films with TiO2 microspheres as the light blocking layers were prepared. PbS, CdS and CdSe quantum dots (QDs) were assembled onto TiO2 photoanodes by simple successive ionic layer absorption and reaction (SILAR) to fabricate CdSe/CdS/PbS co-sensitized solar cells. An improved power conversion efficiency (PCE) of 5.11% was achieved for CdSe/CdS/PbS co-sensitized solar cells at one sun illumination (AM 1.5 G, 100 mW cm-2), which had an improvement of 22.6% over that of the CdSe/CdS co-sensitized solar cells (4.17%). This enhancement is mainly attributed to their better ability of the absorption of solar light with the existence of PbS QDs, the reduction of charge recombination of the excited electron and longer lifetime of electrons, which have been proved with the photovoltaic studies and electrochemical impedance spectroscopy (EIS).

Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

Science.gov (United States)

Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

2018-04-01

The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

Development of a hybrid sputtering/evaporation process for Cu(In,Ga)Se{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Acciarri, M.; Binetti, S.; Le Donne, A.; Lorenzi, B.; Caccamo, L.; Miglio, L. [Dipartimento di Scienza dei Materiali e Solar Energy Research Center MIB-SOLAR, Universita di Milano Bicocca, Milan (Italy); Moneta, R.; Marchionna, S.; Meschia, M. [Voltasolar s.r.l, Turate (Italy)

2011-08-15

In this paper we report a new method for Cu(In,Ga)Se{sub 2} deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se{sub 2} has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm{sup 2} have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Anodic Titania Nanotube Arrays Sensitized with Mn- or Co-Doped CdS Nanocrystals

International Nuclear Information System (INIS)

Smith, York R.; Gakhar, Ruchi; Merwin, Augustus; Mohanty, Swomitra K.; Chidambaram, Dev; Misra, Mano

2014-01-01

Highlights: • Mn or Co doped CdS where synthesized and deposited onto TiO 2 nanotubular arrays. • Synthesis and deposition were achieved simultaneously using SILAR method. • Various characterization techniques demonstrate lattice incorporation of dopant. • Photoelectrochemical performance was analyzed using AM 1.5 irradiation. • Dopants increases depletion width of CdS and increase photoelectrochemical responses. - Abstract: The use of doped luminescent nanocrystals or quantum dots have mainly been explored for imaging applications; however, recently they have gained interest in solar energy conversion applications due to long electron lifetimes, tunable band gaps and emission by compositional control. In this study, we have examined the application of Mn or Co doped CdS nanocrystals as a sensitizing layer over titania nanotubular arrays synthesized via electrochemical anodization in photoelectrochemical applications. The doped and undoped CdS nanocrystals were simultaneously synthesized and deposited onto the titania surface by adoption of a successive ion layer adsorption-reaction (SILAR) method. Various characterization methods indicate lattice incorporation of the dopant within CdS. The addition of dopants to CdS was found to improve the photoelectrochemical performance by increasing the depletion width of the CdS nanocrystals and reducing recombination losses of charge carriers

13.7%-efficient Zn(Se,OH){sub x}/Cu(In,Ga)(S,Se){sub 2} thin-film solar cell

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Hahn-Meitner-Institut, Bereich Physikalische Chemie, Berlin (Germany); Blieske, U.; Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Bereich Festkoerperphysik, Berlin (Germany)

1998-12-01

Cu(In,Ga)Se{sub 2} (CIGS) and related semiconducting compounds have demonstrated their high potential for high-efficiency thin-film solar cells. The highest efficiency for CIGS based thin-film solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as chemical based deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, Zn(Se,OH){sub x} buffer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se){sub 2} (CIGSS). A total-area conversion efficiency of 13.7% was certified by the Fraunhofer Institute for Solar Energy Systems. The CIGSS absorber was fabricated by Siemens Solar Industries (California). For device optimisation, the thickness and good surface coverage were controlled by XPS-UPS photoemission spectroscopy. A Zn(Se,OH){sub x} thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buffer film on CIGSS, with open-circuit photovoltage V{sub oc} = 535 mV, fill factor FF = 70.76% and a high short-circuit photocurrent density J{sub sc} 36.1 mA cm{sup -2}. (Author)

Energy efficiency of a photovoltaic cell based thin films CZTS by ...

African Journals Online (AJOL)

Energy efficiency of a photovoltaic cell based thin films CZTS by SCAPS. ... use of natural resources, the use of renewable energy including solar photovoltaic ... η for typical structures of ZnO / i- ZnO / CdS / CZTS and ITO / ZnO / CdS / CZTS.

Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

International Nuclear Information System (INIS)

Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

2016-01-01

The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

Introduction to solar cell production

International Nuclear Information System (INIS)

Kim, Gyeong Hae; Lee, Jun Sin

2009-08-01

This book introduces solar cell production. It is made up eight chapters, which are summary of solar cell with structure and prospect of the business, special variable of solar cell on light of the sun and factor causing variable of solar cell, production of solar cell with surface texturing, diffusion, metal printing dry and firing and edge isolation, process of solar cell on silicone wafer for solar cell, forming of electrodes, introduction of thin film solar cell on operating of solar cell, process of production and high efficiency of thin film solar cell, sorting of solar cell and production with background of silicone solar cell and thin film solar cell, structure and production of thin film solar cell and compound solar cell, introduction of solar cell module and the Industrial condition and prospect of solar cell.

Effect of heat treatments and window layer processing on the characteristics of CuInGaSe{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ramanathan, K.; Contreras, M.A.; Tuttle, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

Interaction between chemical bath deposited CdS and ZnO window layers are a focus of this paper. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. When applied to ZnO/CdS/CuInGaSe{sub 2} thin film solar cells, changes in the short and long wavelength response were observed. The latter is attributed to an increase in the energy gap of the absorber by diffusion of S. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

2015-09-08

A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

Platelike WO3 sensitized with CdS quantum dots heterostructures for photoelectrochemical dynamic sensing of H2O2 based on enzymatic etching.

Science.gov (United States)

Wang, Yanhu; Gao, Chaomin; Ge, Shenguang; Yu, Jinghua; Yan, Mei

2016-11-15

A platelike tungsten trioxide (WO3) sensitized with CdS quantum dots (QDs) heterojunction is developed for solar-driven, real-time, and selective photoelectrochemical (PEC) sensing of H2O2 in the living cells. The structure is synthesized by hydrothermally growing platelike WO3 on fluorine doped tin oxide (FTO) and subsequently sensitized with CdS QDs. The as-prepared WO3-CdS QDs heterojunction achieve significant photocurrent enhancement, which is remarkably beneficial for light absorption and charge carrier separation. Based on the enzymatic etching of CdS QDs enables the activation of quenching the charge transfer efficiency, thus leading to sensitive PEC recording of H2O2 level in buffer and cellular environments. The results indicated that the proposed method will pave the way for the development of excellent PEC sensing platform with the quantum dot sensitization. This study could also provide a new train of thought on designing of self-operating photoanode in PEC sensing, promoting the application of semiconductor nanomaterials in photoelectrochemistry. Copyright © 2016 Elsevier B.V. All rights reserved.

The CdS/CdSe/ZnS Photoanode Cosensitized Solar Cells Basedon Pt, CuS, Cu2S, and PbS Counter Electrodes

Directory of Open Access Journals (Sweden)

Tung Ha Thanh

2014-01-01

Full Text Available Highly ordered mesoporous TiO2 modified by CdS, CdSe, and ZnS quantum dots (QDs was fabricated by successive ionic layer adsorption and reaction (SILAR method. The quantity of material deposition seems to be affected not only by the employed deposition method but also and mainly by the nature of the underlying layer. The CdS, CdSe, and ZnS QDs modification expands the photoresponse range of mesoporous TiO2 from ultraviolet region to visible range, as confirmed by UV-Vis spectrum. Optimized anode electrodes led to solar cells producing high current densities. Pt, CuS, PbS, and Cu2S have been used as electrocatalysts on counter electrodes. The maximum solar conversion efficiency reached in this work was 1.52% and was obtained by using Pt electrocatalyst. CuS, PbS, and Cu2S gave high currents and this was in line with the low charge transfer resistances recorded in their case.

Hybrid polymer-CdS solar cell active layers formed by in situ growth of CdS nanoparticles

International Nuclear Information System (INIS)

Masala, S.; Del Gobbo, S.; Borriello, C.; Bizzarro, V.; La Ferrara, V.; Re, M.; Pesce, E.; Minarini, C.; De Crescenzi, M.; Di Luccio, T.

2011-01-01

The integration of semiconductor nanoparticles (NPs) into a polymeric matrix has the potential to enhance the performance of polymer-based solar cells taking advantage of the physical properties of NPs and polymers. We synthesize a new class of CdS-NPs-based active layer employing a low-cost and low temperature route compatible with large-scale device manufacturing. Our approach is based on the controlled in situ thermal decomposition of a cadmium thiolate precursor in poly(3-hexylthiophene) (P3HT). The casted P3HT:precursor solid foils were heated up from 200 to 300 °C to allow the precursor decomposition and the CdS-NP formation within the polymer matrix. The CdS-NP growth was controlled by varying the annealing temperature. The polymer:precursor weight ratio was also varied to investigate the effects of increasing the NP volume fraction on the solar cell performances. The optical properties were studied by using UV–Vis absorption and photoluminescence (PL) spectroscopy at room temperature. To investigate the photocurrent response of P3HT:CdS nanocomposites, ITO/P3HT:CdS/Al solar cell devices were realized. We measured the external quantum efficiency (EQE) as a function of the wavelength. The photovoltaic response of the devices containing CdS-NPs showed a variation compared with the devices with P3HT only. By changing the annealing temperature the EQE is enhanced in the 400–600 nm spectral region. By increasing the NPs volume fraction remarkable changes in the EQE spectra were observed. The data are discussed also in relation to morphological features of the interfaces studied by Focused Ion Beam technique.

CERN Document Server (CDS): Introduction

CERN Multimedia

CERN. Geneva; Costa, Flavio

2017-01-01

A short online tutorial introducing the CERN Document Server (CDS). Basic functionality description, the notion of Revisions and the CDS test environment. Links: CDS Production environment CDS Test environment  

Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

International Nuclear Information System (INIS)

Bae, Dowon; Gho, Junghwan; Shin, Minjung; Kwon, Sehan

2013-01-01

Cd (1−x) Zn x S (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se 2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. - Highlights: ► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se 2 (CIGS) photovoltaic (PV) panels. ► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated. ► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS. ► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS. ► However, it was revealed that only Cd and S ions were found at the surface of CIGS

Photovoltaic and Impedance Properties of Hierarchical TiO2 Nanowire Based Quantum Dot Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

Amanullah Fatehmulla

2015-01-01

Full Text Available Growth and characterization of TiO2 nanowire (NW assemblies on FTO glass using a typical hydrothermal synthesis have been reported. CdS quantum dots (QDs have been deposited on TiO2 nanowires by successive ion layer adsorption and reaction (SILAR method. FESEM image exhibits the flower-like hierarchical TiO2 bunch of nanowires. HRTEM image confirms the size of CdS QDs between 5 and 6 nm. XRD and absorption studies revealed proper growth of CdS quantum dots on TiO2 nanowires. At AM 1.5 illumination intensity, the solar cell, with the configuration FTO/TiO2-NW/CdS-QDs/Pt-FTO, displays a short circuit current (Jsc of 1.295 mA and an open circuit voltage (Voc of 0.38 V. The Voc and Jsc showed linear behavior at higher illumination intensities. The peak in power-voltage characteristics at various illuminations showed a shift towards higher Voc values. Capacitance-voltage (C-V, conductance-voltage (G-V, and series resistance-voltage (Rs-V measurements of the cell in the frequency ranging from 5 kHz to 5 MHz showed decreasing trend of capacitance with increase of frequency whereas increase in conductance and decrease in resistance have been noticed with increase of frequency. All the results including the individual behavior of the plots of capacitance, conductance, and series resistance as a function of bias voltage have been discussed.

Interfacial Properties of CZTS Thin Film Solar Cell

Directory of Open Access Journals (Sweden)

N. Muhunthan

2014-01-01

Full Text Available Cu-deficient CZTS (copper zinc tin sulfide thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

Data on HepG2 cells changes following exposure to cadmium sulphide quantum dots (CdS QDs

Directory of Open Access Journals (Sweden)

Laura Paesano

2017-04-01

Full Text Available The data included in this paper are associated with the research article entitled "Markers for toxicity to HepG2 exposed to cadmium sulphide quantum dots; damage to mitochondria" (Paesano et al. [1]. The article concerns the cytotoxic and genotoxic effects of CdS QDs in HepG2 cells and the mechanisms involved. In this dataset, changes in expression levels of candidate genes are reported, together with details concerning synthesis and properties of CdS QDs, additional information obtained through literature survey, measures of the mitochondrial membrane potential and the glutathione redox state.

In vitro and in vivo assessment of nanotoxicity of CdS quantum dot/aminopolysaccharide bionanoconjugates

International Nuclear Information System (INIS)

2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil); Department of Physiology and Biophysics, ICB, UFMG (Brazil))" data-affiliation=" (Center of Nanoscience, Nanotechnology, and Innovation-CeNano2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil); Department of Physiology and Biophysics, ICB, UFMG (Brazil))" >Carvalho, S.M. de; 2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil))" data-affiliation=" (Center of Nanoscience, Nanotechnology, and Innovation-CeNano2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil))" >Mansur, A.A.P.; 2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil))" data-affiliation=" (Center of Nanoscience, Nanotechnology, and Innovation-CeNano2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil))" >Mansur, H.S.; Guedes, M.I.M.C.; Lobato, Z.I.P.; Leite, M.F.

2017-01-01

The nanotoxicity of Cd-containing quantum dots (QDs) for biomedical applications is very controversial and not completely understood. In this study, we evaluated the cytotoxicity of surface-biofunctionalized CdS QDs with chitosan directly synthesized via aqueous route at room temperature. These core-shell CdS-chitosan nanoconjugates showed different degrees of cytotoxic responses using MTT cell proliferation assay toward three human cell cultures, human osteosarcoma cell line (SAOS), non-Hodgkin's B cell lymphoma (Toledo), and human embryonic kidney cell line (HEK293T), under three exposure times (1, 3, and 5 days) and three colloidal concentrations (10 nM, 50 nM, and 100 nM). The results clearly demonstrated that the CdS QDs, regardless to the fact that they were coated with a biocompatible aminopolysaccharide shell, induced a severe dose- and time-dependent inhibition of cell viability. In addition, the HEK293T and SAOS cell lines showed much more sensitive response compared to Toledo, which indicated that the cytotoxicity was also cell-type dependent. The exceptional resistance of Toledo cells to toxic effects of CdS nanoconjugates even at severe test conditions was assigned to specific role of B-lineage cells of the immune defense system. Remarkably, no conclusive evidence of toxicity of CdS nanoconjugates was observed in vivo using intravenous injections of CdS nanoconjugates in BALB/c mouse animal models for 30 days, but localized fluorescence was detected in ex-vivo liver tissue samples. Therefore, these results prove that there is no guarantee of “risk-free” use of CdS nanoconjugates for in vivo applications, even when functionalized with biopolymer ligands, as they can pose an excessive threat due to unpredicted and uncorrelated responses under in vitro and in vivo biological assays with highly toxic cadmium ions. - Graphical abstract: Biocompatible surface functionalization with aminopolysaccharide is not enough for assuring safe biomedical

In vitro and in vivo assessment of nanotoxicity of CdS quantum dot/aminopolysaccharide bionanoconjugates

Energy Technology Data Exchange (ETDEWEB)

Carvalho, S.M. de [Center of Nanoscience, Nanotechnology, and Innovation-CeNano" 2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil); Department of Physiology and Biophysics, ICB, UFMG (Brazil); Mansur, A.A.P. [Center of Nanoscience, Nanotechnology, and Innovation-CeNano" 2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil); Mansur, H.S., E-mail: hmansur@demet.ufmg.br [Center of Nanoscience, Nanotechnology, and Innovation-CeNano" 2I, Department of Metallurgical and Materials Engineering, Federal University of Minas Gerais, UFMG (Brazil); Guedes, M.I.M.C.; Lobato, Z.I.P. [Department of Preventive Veterinary Medicine, Veterinary School, UFMG (Brazil); Leite, M.F. [Department of Physiology and Biophysics, ICB, UFMG (Brazil)

2017-02-01

The nanotoxicity of Cd-containing quantum dots (QDs) for biomedical applications is very controversial and not completely understood. In this study, we evaluated the cytotoxicity of surface-biofunctionalized CdS QDs with chitosan directly synthesized via aqueous route at room temperature. These core-shell CdS-chitosan nanoconjugates showed different degrees of cytotoxic responses using MTT cell proliferation assay toward three human cell cultures, human osteosarcoma cell line (SAOS), non-Hodgkin's B cell lymphoma (Toledo), and human embryonic kidney cell line (HEK293T), under three exposure times (1, 3, and 5 days) and three colloidal concentrations (10 nM, 50 nM, and 100 nM). The results clearly demonstrated that the CdS QDs, regardless to the fact that they were coated with a biocompatible aminopolysaccharide shell, induced a severe dose- and time-dependent inhibition of cell viability. In addition, the HEK293T and SAOS cell lines showed much more sensitive response compared to Toledo, which indicated that the cytotoxicity was also cell-type dependent. The exceptional resistance of Toledo cells to toxic effects of CdS nanoconjugates even at severe test conditions was assigned to specific role of B-lineage cells of the immune defense system. Remarkably, no conclusive evidence of toxicity of CdS nanoconjugates was observed in vivo using intravenous injections of CdS nanoconjugates in BALB/c mouse animal models for 30 days, but localized fluorescence was detected in ex-vivo liver tissue samples. Therefore, these results prove that there is no guarantee of “risk-free” use of CdS nanoconjugates for in vivo applications, even when functionalized with biopolymer ligands, as they can pose an excessive threat due to unpredicted and uncorrelated responses under in vitro and in vivo biological assays with highly toxic cadmium ions. - Graphical abstract: Biocompatible surface functionalization with aminopolysaccharide is not enough for assuring safe biomedical

Solar Photovoltaic Cells.

Science.gov (United States)

Mickey, Charles D.

1981-01-01

Reviews information on solar radiation as an energy source. Discusses these topics: the key photovoltaic material; the bank theory of solids; conductors, semiconductors, and insulators; impurity semiconductors; solid-state photovoltaic cell operation; limitations on solar cell efficiency; silicon solar cells; cadmium sulfide/copper (I) sulfide…

Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

Science.gov (United States)

Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

2014-10-08

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se{sub 2} solar cell

Energy Technology Data Exchange (ETDEWEB)

Bae, Dowon, E-mail: bae.dowon@yahoo.co.kr; Gho, Junghwan; Shin, Minjung; Kwon, Sehan

2013-05-01

Cd{sub (1−x)}Zn{sub x}S (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se{sub 2} (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. - Highlights: ► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se{sub 2} (CIGS) photovoltaic (PV) panels. ► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated. ► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS. ► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS. ► However, it was revealed that only Cd and S ions were found at the surface of CIGS.

Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

KAUST Repository

Roelofs, Katherine E.; Brennan, Thomas P.; Dominguez, Juan C.; Bailie, Colin D.; Margulis, George Y.; Hoke, Eric T.; McGehee, Michael D.; Bent, Stacey F.

2013-01-01

Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article

Film thickness and chemical processing effects on the stability of cadmium telluride solar cells

International Nuclear Information System (INIS)

Albin, D.S.; Demtsu, S.H.; McMahon, T.J.

2006-01-01

The performance and stability of CdS/CdTe solar cells as a function of layer thickness, back contact etch, and oxygen during the CdCl 2 anneal was determined. Multiple linear regression models were used to analyze the statistical significance of various first order effects and interactions. With stress, all devices showed a reduction in open-circuit voltage (V oc ) and fill factor (FF) characteristic of increased recombination. Devices using thinner CdS were vulnerable to shunt formation. Oxygen during the CdCl 2 anneal minimizes this effect. A thermodynamic model involving the formation of Cu-oxide is presented to explain the latter

Enhanced photovoltaic performance of CdS-sensitized inverted organic solar cells prepared via a successive ionic layer adsorption and reaction method

Science.gov (United States)

Oleiwi, Hind Fadhil; Zakaria, Azmi; Yap, Chi Chin; Abbas, Haidr Abdulzahra; Tan, Sin Tee; Lee, Hock Beng; Tan, Chun Hui; Ginting, Riski Titian; Alshanableh, Abdelelah; Talib, Zainal Abidin

2017-05-01

One-dimensional ZnO nanorods (ZNRs) synthesized on fluorine-doped tin oxide (FTO) glass by hydrothermal method were modified with cadmium sulfide quantum dots (CdS QDs) as an electron transport layer (ETL) in order to enhance the photovoltaic performance of inverted organic solar cell (IOSC). In present study, CdS QDs were deposited on ZNRs using a Successive Ionic Layer Adsorption and Reaction method (SILAR) method. In typical procedures, IOSCs were fabricated by spin-coating the P3HT:PC61BM photoactive layer onto the as-prepared ZNRs/CdS QDs. The results of current-voltage (I-V) measurement under illumination shows that the FTO/ZNRs/CdS QDs/ P3HT:PC61BM/ PEDOT: PSS/Ag IOSC achieved a higher power conversion efficiency (4.06 %) in comparison to FTO/ZNRs/P3HT:PC61BM/PEDOT: PSS/Ag (3.6 %). Our findings suggest that the improved open circuit voltage (Voc) and short circuit current density (Jsc) of ZNRs/CdS QDs devices could be attributed to enhanced electron selectivity and reduced interfacial charge carrier recombination between ZNRs and P3HT:PC61BM after the deposition of CdS QDs. The CdS QDs sensitized ZNRs reported herein exhibit great potential for advanced optoelectronic application.

Ultrasensitive electrochemical detection of tumor cells based on multiple layer CdS quantum dots-functionalized polystyrene microspheres and graphene oxide - polyaniline composite.

Science.gov (United States)

Wang, Jidong; Wang, Xiaoyu; Tang, Hengshan; Gao, Zehua; He, Shengquan; Li, Jian; Han, Shumin

2018-02-15

In this work, a novel ultrasensitive electrochemical biosensor was developed for the detection of K562 cell by a signal amplification strategy based on multiple layer CdS QDs functionalized polystyrene microspheres(PS) as bioprobe and graphene oxide(GO) -polyaniline(PANI) composite as modified materials of capture electrode. Due to electrostatic force of different charge, CdS QDs were decorated on the surface of PS by PDDA (poly(diallyldimethyl-ammonium chloride)) through a layer-by-layer(LBL) assemble technology, in which the structure of multiple layer CdS QDs increased the detection signal intensity. Moreover, GO-PANI composite not only enhanced the electron transfer rate, but also increased tumor cells load ratio. The resulting electrochemical biosensor was used to detect K562 cells with a lower detection limit of 3 cellsmL -1 (S/N = 3) and a wider linear range from 10 to 1.0 × 10 7 cellsmL -1 . This sensor was also used for mannosyl groups on HeLa cells and Hct116 cells, which showed high specificity and sensitivity. This signal amplification strategy would provide a novel approach for detection, diagnosis and treatment for tumor cells. Copyright © 2017 Elsevier B.V. All rights reserved.

Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

Comparative study of polymer and liquid electrolytes in quantum dot sensitized solar cells

Science.gov (United States)

Poudyal, Uma; Wang, Wenyong

We present the study of CdS/CdSe quantum dot sensitized solar cells (QDSSCs) in which Zn2SnO4\\ nanowires on the conductive glass are used as photoanode. The CdS/CdSe quantum dots (QDs) are deposited in the Zn2SnO4 photoanode by the Successive Ionic Layer Adsorption and Reaction (SILAR) method. CdS is first deposited on the nanowires after which it is further coated with 5 cycles of CdSe QDs. Finally, ZnS is coated on the QDs as a passivation layer. The QD sensitized photoanode are then used to assemble a solar device with the polymer and liquid electrolytes. The Incident Photon to Current Efficiency (IPCE) spectra are obtained for the CdS/CdSe coated nanowires. Further, a stability test of these devices is performed, using the polymer and liquid electrolytes, which provides insight to determine the better working electrolyte in the CdS/CdSe QDSSCs. Department of Energy.

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se2 solar cells

Science.gov (United States)

Liu, Wei; Fan, Yu; Li, Xiaodong; Lin, Shuping; Liu, Yang; Shi, Sihan; Wang, He; Zhou, Zhiqiang; Zhang, Yi; Sun, Yun

2018-03-01

Cu(In,Ga)Se2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In,Ga)Se2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O,S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current-voltage and capacitance-voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O,S)/Cu(In,Ga)Se2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

Science.gov (United States)

Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

2016-09-01

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

In vitro and in vivo assessment of nanotoxicity of CdS quantum dot/aminopolysaccharide bionanoconjugates.

Science.gov (United States)

de Carvalho, S M; Mansur, A A P; Mansur, H S; Guedes, M I M C; Lobato, Z I P; Leite, M F

2017-02-01

The nanotoxicity of Cd-containing quantum dots (QDs) for biomedical applications is very controversial and not completely understood. In this study, we evaluated the cytotoxicity of surface-biofunctionalized CdS QDs with chitosan directly synthesized via aqueous route at room temperature. These core-shell CdS-chitosan nanoconjugates showed different degrees of cytotoxic responses using MTT cell proliferation assay toward three human cell cultures, human osteosarcoma cell line (SAOS), non-Hodgkin's B cell lymphoma (Toledo), and human embryonic kidney cell line (HEK293T), under three exposure times (1, 3, and 5days) and three colloidal concentrations (10nM, 50nM, and 100nM). The results clearly demonstrated that the CdS QDs, regardless to the fact that they were coated with a biocompatible aminopolysaccharide shell, induced a severe dose- and time-dependent inhibition of cell viability. In addition, the HEK293T and SAOS cell lines showed much more sensitive response compared to Toledo, which indicated that the cytotoxicity was also cell-type dependent. The exceptional resistance of Toledo cells to toxic effects of CdS nanoconjugates even at severe test conditions was assigned to specific role of B-lineage cells of the immune defense system. Remarkably, no conclusive evidence of toxicity of CdS nanoconjugates was observed in vivo using intravenous injections of CdS nanoconjugates in BALB/c mouse animal models for 30days, but localized fluorescence was detected in ex-vivo liver tissue samples. Therefore, these results prove that there is no guarantee of "risk-free" use of CdS nanoconjugates for in vivo applications, even when functionalized with biopolymer ligands, as they can pose an excessive threat due to unpredicted and uncorrelated responses under in vitro and in vivo biological assays with highly toxic cadmium ions. Copyright © 2016 Elsevier B.V. All rights reserved.

L1000CDS2: LINCS L1000 characteristic direction signatures search engine.

Science.gov (United States)

Duan, Qiaonan; Reid, St Patrick; Clark, Neil R; Wang, Zichen; Fernandez, Nicolas F; Rouillard, Andrew D; Readhead, Ben; Tritsch, Sarah R; Hodos, Rachel; Hafner, Marc; Niepel, Mario; Sorger, Peter K; Dudley, Joel T; Bavari, Sina; Panchal, Rekha G; Ma'ayan, Avi

2016-01-01

The library of integrated network-based cellular signatures (LINCS) L1000 data set currently comprises of over a million gene expression profiles of chemically perturbed human cell lines. Through unique several intrinsic and extrinsic benchmarking schemes, we demonstrate that processing the L1000 data with the characteristic direction (CD) method significantly improves signal to noise compared with the MODZ method currently used to compute L1000 signatures. The CD processed L1000 signatures are served through a state-of-the-art web-based search engine application called L1000CDS 2 . The L1000CDS 2 search engine provides prioritization of thousands of small-molecule signatures, and their pairwise combinations, predicted to either mimic or reverse an input gene expression signature using two methods. The L1000CDS 2 search engine also predicts drug targets for all the small molecules profiled by the L1000 assay that we processed. Targets are predicted by computing the cosine similarity between the L1000 small-molecule signatures and a large collection of signatures extracted from the gene expression omnibus (GEO) for single-gene perturbations in mammalian cells. We applied L1000CDS 2 to prioritize small molecules that are predicted to reverse expression in 670 disease signatures also extracted from GEO, and prioritized small molecules that can mimic expression of 22 endogenous ligand signatures profiled by the L1000 assay. As a case study, to further demonstrate the utility of L1000CDS 2 , we collected expression signatures from human cells infected with Ebola virus at 30, 60 and 120 min. Querying these signatures with L1000CDS 2 we identified kenpaullone, a GSK3B/CDK2 inhibitor that we show, in subsequent experiments, has a dose-dependent efficacy in inhibiting Ebola infection in vitro without causing cellular toxicity in human cell lines. In summary, the L1000CDS 2 tool can be applied in many biological and biomedical settings, while improving the extraction of

Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

Energy Technology Data Exchange (ETDEWEB)

Han, Jun-feng, E-mail: pkuhjf@bit.edu.cn [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Jaegermann, Wolfram [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Besland, M.P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

2015-05-01

The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface.

Four-cell solar tracker

Science.gov (United States)

Berdahl, C. M.

1981-01-01

Forty cm Sun tracker, consisting of optical telescope and four solar cells, stays pointed at Sun throughout day for maximum energy collection. Each solar cell generates voltage proportional to part of solar image it receives; voltages drive servomotors that keep image centered. Mirrored portion of cylinder extends acquisition angle of device by reflecting Sun image back onto solar cells.

Nanocrystal Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Gur, Ilan [Univ. of California, Berkeley, CA (United States)

2006-01-01

This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

Bifunctional NaYF4:Er3+/Yb3+ submicron rods, implemented in quantum dot sensitized solar cell(Conference Presentation)

Science.gov (United States)

Guerrero, J. Pablo; Cerdán Pasarán, Andrea; López-Luke, Tzarara; Ramachari, D.; Esparza, Diego; De la Rosa Cruz, Elder; Romero Arellano, Victor Hugo

2016-09-01

In this work are presented the results obtained with solar cells sensitized with quantum dots of cadmium sulphide (CdS) incorporating luminescent materials (NaYF4:Yb/Er). The study revealed that through using a bifunctional layer of NaYF4:Yb/Er submicron rods, the infrared radiation is absorbed in 980nm to generate luminescence in the visible region to 530nm, under the UP-conversion process, in the same way simultaneously, NaYF4:Yb/Er layer causes scattering toward the quantum dots, the emission and scattering generated by this material is reabsorbed by the QD-CdS, and these in turn are absorbing in its range of solar radiation absorption, Thus generates an increase in the electron injection into the semiconductor of TiO2. The results of a cell incorporating NaYF4: Yb/Er at 0.07M shown photoconversion efficiencies of 3.39% improving efficiency with respect to the reference solar cell without using NaYF4: Yb/Er of 1.99%. The obtained values of current and voltage showed a strong dependence of the percentage of NaYF4 Yb/Er, and the mechanism of incorporation of this material.

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Combining Energy Conversion and Storage: A Solar Powered Supercapacitor

International Nuclear Information System (INIS)

Narayanan, Remya; Kumar, P. Naresh; Deepa, Melepurath; Srivastava, Avanish Kumar

2015-01-01

Graphical abstract: - Highlights: • A plasmonic TiO_2/CdS/Au fibers photoanode is fabricated for the first time. • The efficiency of the plasmonic cell is greater by 1.35 times than the non-plasmonic one. • A solar powered supercapacitor is developed with plasmonic photoanode and multiwalled carbon nanotubes. • The solar cell current charges the supercapacitor. • A specific capacitance of 150 F g"−"1 is achieved under sunlight without any external bias. - Abstract: A solar powered supercapacitor wherein a plasmonic quantum dot solar cell (QDSC) sources the photocurrent for charging/discharging a conjoined supercapacitor based on multiwalled carbon nanotubes (MWCNTs) is demonstrated. Gold or Au fibers are integrated into a titanium dioxide/cadmium sulfide (TiO_2/CdS) electrode to yield a TiO_2/CdS/Au photoanode. The plasmonic effect of Au fibers is reflected in the higher incident photon to current conversion efficiency (IPCE = 55%) and an improved overall power conversion efficiency (3.45%) produced by the TiO_2/CdS/Au photoanode relative to the non-plasmonic TiO_2/CdS photoanode. A Janus type bi-functional electrode composed of MWCNTs on either face separated by glass is prepared and it is coupled with the TiO_2/CdS/Au electrode and another MWCNT electrode to yield the tandem solar powered supercapacitor. By channelling the photocurrent produced by the QDSC part, under 0.1 sun illumination, the capacitance of the symmetric supercapacitor, without the application of any external bias is 150 F g"−"1 which compares well with reported values of electrically powered MWCNT supercapacitors. Our innovative design for a photo-supercapacitor offers a new paradigm for combining low cost photovoltaics with energy storage to yield a technologically useful device that needs nothing else other than solar energy to run.

TiO2-CdS Nanocomposites: Effect of CdS Oxidation on the Photocatalytic Activity

Directory of Open Access Journals (Sweden)

A. Hamdi

2016-01-01

Full Text Available Nanocomposites TiO2-CdS with different relative contents of CdS (molar ratios Cd/Ti = 0.02, 0.03, 0.05, 0.1, 0.2, and 0.5 were studied. The structural, photophysical, and chemical properties were investigated using XRD, Raman spectroscopy, XPS, GSDR, and LIL. XRD and Raman results confirmed the presence of TiO2 and CdS with intensities dependent on the ratio Cd/Ti. The presence of CdSO4 was detected by XPS at the surface of all TiO2-CdS composites. The relative amount of sulphate was dependent on the CdS loading. Luminescence time-resolved spectra clearly proved the existence of an excitation transfer process from CdS to TiO2 through the luminescence emission from TiO2 after excitation of CdS at λexc=410 nm, where no direct excitation of TiO2 occurs. Photodegradation of a series of aromatic carboxylic acids—benzoic, salicylic, 4-bromobenzoic, 3-phenylpropionic, and veratric acids—showed a great enhancement in the photocatalytic efficiency of the TiO2-CdS composites, which is due, mainly, to the effect of the charge carriers’ increased lifetime. In addition, it was shown that the oxidation of CdS to CdSO4 did not result in the deactivation of the photocatalytic properties and even contributed to enhance the degradation efficiency.

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Co+ -ion implantation induced doping of nanocrystalline CdS thin films: structural, optical, and vibrational properties

International Nuclear Information System (INIS)

Chandramohan, S.; Sarangi, S.N.; Majumder, S.; Som, T.; Kanjilal, A.; Sathyamoorthy, R.

2009-01-01

Full text: Transition metal (Mn, Fe, Co and Ni) doped CdS nanostructures and nanocrystalline thin films have attracted much attention due to their anticipated applications in magneto-optical, non-volatile memory and future spintronics devices. Introduction of impurities in substitutional positions is highly desirable for such applications. Ion implantation is known to provide many advantages over conventional methods for efficient doping and possibility of its seamless integration with device processing steps. It is not governed by equilibrium thermodynamics and offers the advantages of high spatial selectivity and to overcome the solubility limits. In this communication, we report on modifications of structural morphological, optical, and vibrational properties of 90 keV Co + -ion implanted CdS thin films grown by thermal evaporation. Co + -ion implantation was performed in the fluence range of 0.1-3.6x10 16 ions cm -2 These fluences correspond to Co concentration in the range of 0.34-10.8 at % at the peak position of profile. Implantation was done at an elevated temperature of 573 K in order to avoid amorphization and to enhance the solubility of Co ions in the CdS lattice. Films were characterized by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), optical absorption, and micro-Raman spectroscopy. Implantation does not lead to any secondary phase formation either in the form of impurity or the metallic clusters. However, implantation improves the crystalline quality of the samples and leads to supersaturation of Co ions in the CdS lattice. Thus, nanocrystalline CdS thin films can be considered as a good radiation- resistant material, which can be employed for prolonged use in solar cells for space applications. The optical band gap is found to decrease systematically with increasing ion fluence from 2.39 to 2.28 eV. Implantation leads to agglomeration of grains and a systematic increase in the surface roughness. Both GAXRD and micro

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

ENERGY EFFICIENCY OF A PHOTOVOLTAIC CELL BASED THIN FILMS CZTS BY SCAPS

Directory of Open Access Journals (Sweden)

C. Mebarkiaa

2016-05-01

Full Text Available In the overall context of the diversification of the use of natural resources, the use of renewable energy including solar photovoltaic has become increasingly indispensable. As such, the development of a new generation of photovoltaic cells based on CuZnSnS4 (CZTS looks promising. Cu2ZnSnS4 (CZTS is a new film absorber, with good physical properties (band gap energy 1.4-1.6 eV [01] with a large absorption coefficient over 104 cm-1. Indeed, the performance of these cells exceeded 30% in recent years.In the present paper, our work based on modeling and numerical simulation, we used SCAPS to study the performance of solar cells based on Cu2ZnSnS4 (CZTS and thus evaluate the electrical efficiency η for typical structures of ZnO / i- ZnO / CdS / CZTS and ITO / ZnO / CdS / CZTS. Furthermore, the influence of the change of CdS by ZnSe buffer layer was treated in this paper.

Rectenna solar cells

CERN Document Server

Moddel, Garret

2013-01-01

Rectenna Solar Cells discusses antenna-coupled diode solar cells, an emerging technology that has the potential to provide ultra-high efficiency, low-cost solar energy conversion. This book will provide an overview of solar rectennas, and provide thorough descriptions of the two main components: the diode, and the optical antenna. The editors discuss the science, design, modeling, and manufacturing of the antennas coupled with the diodes. The book will provide concepts to understanding the challenges, fabrication technologies, and materials required to develop rectenna structures. Written by e

Nanostructured Organic Solar Cells

DEFF Research Database (Denmark)

Radziwon, Michal Jędrzej; Rubahn, Horst-Günter; Madsen, Morten

Recent forecasts for alternative energy generation predict emerging importance of supporting state of art photovoltaic solar cells with their organic equivalents. Despite their significantly lower efficiency, number of application niches are suitable for organic solar cells. This work reveals...... the principles of bulk heterojunction organic solar cells fabrication as well as summarises major differences in physics of their operation....

Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

International Nuclear Information System (INIS)

Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian; Zhou, Xiao; Qin, Donghuan; Wu, Hongbin; Xia, Yuxin; Hou, Lintao; Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui

2013-01-01

CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO x /Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl 2 annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl 2 annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl 2 -annealing conditions (370 °C CdCl 2 annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl 2 -annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V OC of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage

Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

Science.gov (United States)

Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

2016-05-01

At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

A comparative study on CdS: PEO and CdS: PMMA nanocomposite solid films

Energy Technology Data Exchange (ETDEWEB)

Padmaja, S. [Thin film centre, PSG College of Technology, Coimbatore (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Department of Physics, PSG Institute of Technology and Applied Research, Coimbatore (India); Balaji, R.; Vaideki, K. [Thin film centre, PSG College of Technology, Coimbatore (India)

2016-08-15

Cadmium Sulphide (CdS) nanoparticles were reinforced in Poly(ethylene Oxide) (PEO) and Poly(methyl methacrylate) (PMMA) matrices by in situ technique. The presence of CdS in PEO and PMMA matrix was confirmed using X-ray photoelectron spectroscopy (XPS). Fourier Transform Infrared spectroscopy (FTIR) analysis disclosed the co-ordination of CdS in the matrices. Thermal analysis of the nanocomposites was carried out using Differential Scanning calorimetric studies (DSC). The optical studies using UV–vis spectroscopy were carried out to find the band gap of the materials and the absorption onset. The CdS particle size in the matrices was found by Effective Mass Approximation (EMA) model using the band gap values and was confirmed by TEM studies. The surface trapped emissions of the nanocomposites were observed from the photoluminescence (PL) spectra. The distribution of CdS particles in the polymer matrices were presented by Atomic force microscopic studies (AFM).

A comparative study on CdS: PEO and CdS: PMMA nanocomposite solid films

International Nuclear Information System (INIS)

Padmaja, S.; Jayakumar, S.; Balaji, R.; Vaideki, K.

2016-01-01

Cadmium Sulphide (CdS) nanoparticles were reinforced in Poly(ethylene Oxide) (PEO) and Poly(methyl methacrylate) (PMMA) matrices by in situ technique. The presence of CdS in PEO and PMMA matrix was confirmed using X-ray photoelectron spectroscopy (XPS). Fourier Transform Infrared spectroscopy (FTIR) analysis disclosed the co-ordination of CdS in the matrices. Thermal analysis of the nanocomposites was carried out using Differential Scanning calorimetric studies (DSC). The optical studies using UV–vis spectroscopy were carried out to find the band gap of the materials and the absorption onset. The CdS particle size in the matrices was found by Effective Mass Approximation (EMA) model using the band gap values and was confirmed by TEM studies. The surface trapped emissions of the nanocomposites were observed from the photoluminescence (PL) spectra. The distribution of CdS particles in the polymer matrices were presented by Atomic force microscopic studies (AFM).

Radiation hard solar cell and array

International Nuclear Information System (INIS)

Russell, R.L.

1975-01-01

A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

Solar cell radiation handbook

Science.gov (United States)

Tada, H. Y.; Carter, J. R., Jr.; Anspaugh, B. E.; Downing, R. G.

1982-01-01

The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

Effects of bacteria on CdS thin films used in technological devices

Science.gov (United States)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

Directory of Open Access Journals (Sweden)

Dyi-Cheng Chen

2014-07-01

Full Text Available This study used ANSYS simulation software for analyzing an ultraviolet (UV (355 nm laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to SiO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 μs, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.

How the relative permittivity of solar cell materials influences solar cell performance

DEFF Research Database (Denmark)

Crovetto, Andrea; Huss-Hansen, Mathias K.; Hansen, Ole

2017-01-01

of the materials permittivity on the physics and performance of the solar cell by means of numerical simulation supported by analytical relations. We demonstrate that, depending on the specific solar cell configuration and materials properties, there are scenarios where the relative permittivity has a major......The relative permittivity of the materials constituting heterojunction solar cells is usually not considered as a design parameter when searching for novel combinations of heterojunction materials. In this work, we investigate the validity of such an approach. Specifically, we show the effect...... the heterojunction partner has a high permittivity, solar cells are consistently more robust against several non-idealities that are especially likely to occur in early-stage development, when the device is not yet optimized....

Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

2009-02-02

Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

SolarProTeam - Final report; Solar production technology melts architects

Energy Technology Data Exchange (ETDEWEB)

2010-07-01

To this date, no module manufacturing line has been able to produce special designed multiple function modules or Custom Design Solution (hereafter CDS) modules at costs that are anywhere near the costs of standard modules. The goal of this R and D project was to provide the basis for eliminating the multiplication of costs for specialised modules. The purpose of the SolarProTeam R and D project is to form the foundation of special production equipment and production lay-out in order to realise a cost-effective CDS module production line. The main results derive from research and development of: (1) A number of new module designs corresponding to the special demands of end-users. For instance, black shiny modules with high efficiency; long large black modules with in-built thermal absorbers; flexible high voltage lightweight modules for ground water pumping; large area curved colorful modules with for architecturally advanced buildings; a solar tree for power supply placed along roads and in public places. Module designs are reported. (2) A new general concept 'Q-keys' based on a master plan and specially designed modules integrating both very large and medium sized individual solar plants in the environment of the end-user. I.e., in addition to integration with regard to architectural and environment demands, integration with respect to technical demands are met, such as storage, desalination plants, cooling, mini-grids, the general grid, etc. The Q-keys concept emphasizes the financial issue in that the solar plants are competitive with coal generated electricity and stand-alone diesel generation of electricity. (3) Fully automated production equipment and a semi-automatic module production line, which can mass produce advanced multifunctional and/or architecturally integrated modules at a cost effective price. The equipment and production line were inspired by the functional and technological demands of different types of costumer designed modules. Due

Transparent solar cell window module

Energy Technology Data Exchange (ETDEWEB)

Chau, Joseph Lik Hang; Chen, Ruei-Tang; Hwang, Gan-Lin; Tsai, Ping-Yuan [Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County 709 (China); Lin, Chien-Chu [I-Lai Acrylic Corporation, Tainan City (China)

2010-03-15

A transparent solar cell window module based on the integration of traditional silicon solar cells and organic-inorganic nanocomposite material was designed and fabricated. The transparent solar cell window module was composed of a nanocomposite light-guide plate and traditional silicon solar cells. The preparation of the nanocomposite light-guide plate is easy without modification of the traditional casting process, the nanoparticles sol can be added directly to the polymethyl methacrylate (PMMA) monomer syrup during the process. The solar energy collected by this window can be used to power up small household electrical appliances. (author)

Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: Insitu tin doping by chemical bath deposition technique

CSIR Research Space (South Africa)

Wilson, KC

2014-01-01

Full Text Available ). The Sn(sup4+) doping markedly influenced on the evolution of the CdS nanostructures, resulting in the formation of nanocracks due to the substitution of Cd(sup2+) ions by larger-than-host Sn(sup4+) ions as well as a drastic increase in electrical...

Development and prospects of CdS/CdTe solar cell

International Nuclear Information System (INIS)

Vaillant, L.

2008-01-01

Based on the n-CdS/p-CdTe heterojunction solar cell to thin films, both polycrystalline materials, started to be studied at beginning of the 1970s. However, since the 1960s were structures in which the active material was CdTe. Since then, in almost all proposed cell designs, the main problems encountered related to two important points: recombination losses associated with the main interface and the difficulty to obtain a low resistance ohmic contact with the p-CdTe. For decades, the efficiency of the cell was to rise as I studied and perfected the same from a macroscopic view of the device. Slowly they proposed, manufactured and studied structures responding with higher conversion efficiency. However, in recent years emphasis has been on the need to understand the microscopic mechanisms responsible for the transformations that occur in the device during the manufacturing process of the same. This fact has caused a deepening in the study of polycrystalline nature of the materials making up the cell, using techniques for solving micro and Nano. Special attention have been the borders of grain in the CdTe and studies related to the main junction between CdTe and CdS. This article will attempt to reflect an analysis of the evolution in the design of this type of cell, from its beginnings up to our times.

Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

Science.gov (United States)

Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

1999-06-01

The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivitiy have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80 % range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells.

Effect of the cadmium ion source on the structural and optical properties of chemical bath deposited CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Rami, M.; Benamar, E.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [University Mohamed V, Laboratory of Materials Physics, Dept., Faculty of Sciences, Rabat (Morocco)

1999-06-01

The chemical bath deposition (CBD) technique has been successfully used to deposit cadmium sulphide from cadmium chloride and cadmium acetate as the cadmium ion source and thiourea as the sulphur source on both glass microscope slide and indium tin oxide coated glass substrates. Various properties of the films such as surface morphology, crystallinity, optical properties and resistivity have been investigated. XRD patterns reveal that the CdS films deposited from cadmium chloride have an hexagonal structure. Their preferential orientation changes from (002) to (100) with the thermal annealing. Films deposited from cadmium acetate are amorphous but improve their crystallinity with annealing. SEM analysis shows that the grains of the as deposited films are randomly shaped and appear to be bigger in the case of the CdS prepared from cadmium chloride. The optical transmission of the layers are in the 70-80% range for wavelength above the band gap absorption which makes them more appropriate as window material in heterojunction solar cells. (authors)

Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

2001-01-01

We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

Energy Technology Data Exchange (ETDEWEB)

Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

2017-04-15

The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

World's Most Efficient Solar Cell

Science.gov (United States)

World's Most Efficient Solar Cell National Renewable Energy Laboratory, Spectrolab Set Record For , 1999 - A solar cell that can convert sunlight to electricity at a record-setting 32 percent efficiency on Earth. Spectrolab of Sylmar, Calif., "grew" the record-setting solar cell. After

Structural and optoelectronic properties of β-In{sub 2}S{sub 3} thin films to Be applied on cadmium reduced solar cells

Energy Technology Data Exchange (ETDEWEB)

Galarza Gutierrez, Uziel; Albor Aguilera, Maria Lourdes de; Hernandez Vasquez, Cesar; Aguilar Hernandez, Jorge R.; Remolina Millan, Aduljay [Instituto Politecnico Nacional - ESFM, Dept. de Fisica, U.P.A.L.M., Zacatenco (Mexico); Flores Marquez, Jose M. [Instituto Politecnico Nacional - ESIQIE, Dept. Metalurgia y Mat., U.P.A.L.M., Zacatenco (Mexico); Gonzalez Trujillo, Miguel A. [Instituto Politecnico Nacional - ESCOM, Dept. de Ciencias Basicas, U.P.A.L.M., Zacatenco (Mexico); Jimenez Olarte, Daniel [Instituto Politecnico Nacional - ESIME, SEPI, U.P.A.L.M., Zacatenco (Mexico)

2018-02-15

In{sub 2}S{sub 3} thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In{sub 2}S{sub 3} as ''standard buffer layer'' in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In{sub 2}S{sub 3} physical properties is analyzed. Stable tetragonal β-In{sub 2}S{sub 3} phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10{sup 2} Ω cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In{sub 2}S{sub 3} thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500 nm). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

NARCIS (Netherlands)

Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

Synthesis and application of luminescent single CdS quantum dot encapsulated silica nanoparticles directed for precision optical bioimaging

Directory of Open Access Journals (Sweden)

Veeranarayanan S

2012-07-01

Full Text Available Srivani Veeranarayanan, Aby Cheruvathoor Poulose, M Sheikh Mohamed, Yutaka Nagaoka, Seiki Iwai, Yuya Nakagame, Shosaku Kashiwada, Yasuhiko Yoshida, Toru Maekawa, D Sakthi KumarBio Nano Electronics Research Centre, Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe, JapanAbstract: This paper presents the synthesis of aqueous cadmium sulfide (CdS quantum dots (QDs and silica-encapsulated CdS QDs by reverse microemulsion method and utilized as targeted bio-optical probes. We report the role of CdS as an efficient cell tag with fluorescence on par with previously documented cadmium telluride and cadmium selenide QDs, which have been considered to impart high levels of toxicity. In this study, the toxicity of bare QDs was efficiently quenched by encapsulating them in a biocompatible coat of silica. The toxicity profile and uptake of bare CdS QDs and silica-coated QDs, along with the CD31-labeled, silica-coated CdS QDs on human umbilical vein endothelial cells and glioma cells, were investigated. The effect of size, along with the time-dependent cellular uptake of the nanomaterials, has also been emphasized. Enhanced, high-specificity imaging toward endothelial cell lines in comparison with glioma cells was achieved with CD31 antibody-conjugated nanoparticles. The silica-coated nanomaterials exhibited excellent biocompatibility and greater photostability inside live cells, in addition to possessing an extended shelf life. In vivo biocompatibility and localization study of silica-coated CdS QDs in medaka fish embryos, following direct nanoparticle exposure for 24 hours, authenticated the nanomaterials' high potential for in vivo imaging, augmented with superior biocompatibility. As expected, CdS QD-treated embryos showed 100% mortality, whereas the silica-coated QD-treated embryos stayed viable and healthy throughout and after the experiments, devoid of any deformities. We provide highly cogent and convincing evidence for such

Solar cell concentrating system

International Nuclear Information System (INIS)

Garg, H.P.; Sharma, V.K.; Agarwal, R.K.

1986-11-01

This study reviews fabrication techniques and testing facilities for different solar cells under concentration which have been developed and tested. It is also aimed to examine solar energy concentrators which are prospective candidates for photovoltaic concentrator systems. This may provide an impetus to the scientists working in the area of solar cell technology

High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

Energy Technology Data Exchange (ETDEWEB)

Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

2014-04-01

CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

Safe-haven CDS Premia

DEFF Research Database (Denmark)

Klingler, Sven; Lando, David

We argue that Credit Default Swap (CDS) premia for safe-haven sovereigns, like Germany and the United States, are driven to a large extent by regulatory requirements under which derivatives dealing banks have an incentive to buy CDS to hedge counterparty credit risk of their counterparties. We...

Industrial Silicon Wafer Solar Cells

Directory of Open Access Journals (Sweden)

Dirk-Holger Neuhaus

2007-01-01

Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H. W.; Fischer, Ch. H.; Lux Steiner, M.C.; Jung, Ch

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former in...

Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

Energy Technology Data Exchange (ETDEWEB)

Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian [South China University of Technology, School of Materials Science and Engineering (China); Zhou, Xiao; Qin, Donghuan, E-mail: qindh@scut.edu.cn; Wu, Hongbin [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China); Xia, Yuxin; Hou, Lintao [Jinan University, College of Science and Engineering (China); Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China)

2013-11-15

CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO{sub x}/Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl{sub 2} annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl{sub 2} annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl{sub 2}-annealing conditions (370 °C CdCl{sub 2} annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl{sub 2}-annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V{sub OC} of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage.

Degradation of CIGS solar cells

NARCIS (Netherlands)

Theelen, M.J.

2015-01-01

Thin film CIGS solar cells and individual layers within these solar cells have been tested in order to assess their long term stability. Alongside with the execution of standard tests, in which elevated temperatures and humidity levels are used, the solar cells have also been exposed to a

Solar cell with back side contacts

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

2013-12-24

A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

Three-Terminal Amorphous Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Cheng-Hung Tai

2011-01-01

Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

Study of optoelectronic properties of thin film solar cell materials Cu2ZnSn(S,Se)4 using multiple correlative spatially-resolved spectroscopy techniques

Science.gov (United States)

Chen, Qiong

to understand the underlying microscopic material structures and predict the potential of improvement in device performance. First, by using an array of correlated aforementioned techniques, microscale inhomogeneity of the CdS layer thickness was found in CZTSe solar cells. Thicker CdS regions are found to cause more light-reflection loss thus yielding lower external quantum efficiencies (EQEs) than the general area. However, these regions show much less efficiency degradation at high illumination density, leading to an inversion of LBIC contrast between the CdS rich regions and general area. By improving the CdS layer uniformity, CZTSe device performance can be significantly boosted. And this finding also points out the possibility of operating thin-film photovoltaic device based on similar materials under substantially higher illumination density for concentrated photovoltaic and photo-detection. Second, Micro-Raman reveals multiple secondary phases such as ZnSe and SnSe within the CZTSe films, which are harmful for solar cell operation. In high-laser-power Raman study, CZTSe shows structural change and decomposition, which indicates poor thermal conductivity of the polycrystalline film. Different behaviors of CZTSe films prepared by different methods are observed in high-laser-power and high-temperature Raman studies, both of which offer effective approaches to examine microscopic structural variation of nominally similar CZTSe films. Because of the achieved high spatial resolution, applying micro-Raman and micro-LBIC, we are able to examine the depth variation of the thin absorber film (in the order of 1 microm) in terms of chemical composition, photo-response, and deposition method dependence. In the third part, micro-I-V curves offer direct measurements of electrical parameters reflecting the effects of the device structure, absorber thickness and elemental ratio on the CZTSe cell performance. NaF precursor, low copper and high zinc content are demonstrated

Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2012-02-01

In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

Science.gov (United States)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

Clinical Decision Support (CDS) Inventory

Data.gov (United States)

U.S. Department of Health & Human Services — The Clinical Decision Support (CDS) Inventory contains descriptions of past and present CDS projects across the Federal Government. It includes Federal projects,...

Bias-dependent high saturation solar LBIC scanning of solar cells

Energy Technology Data Exchange (ETDEWEB)

Vorster, F.J.; van Dyk, E.E. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2007-06-15

A light beam-induced current measurement system that uses concentrated solar radiation as a beam probe to map spatially distributed defects on a solar cell has been developed and tested [F.J. Vorster, E.E. van Dyk, Rev. Sci. Instrum., submitted for review]. The induced current response from a flat plate EFG Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. This paper examines the issues relating to transient capacitive effects as well as the electrical behaviour of typical solar cell defect mechanisms under spot illumination. By examining the bias dependence of the S-LBIC maps, various defect mechanisms of photovoltaic (PV) cells under concentrated solar irradiance may be identified. The techniques employed to interpret the spatially distributed IV curves as well as initial results are discussed. (author)

Solar cells

International Nuclear Information System (INIS)

1980-01-01

A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

Fiscal 1976 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on 2-6 group compound semiconductor solar cells); 1976 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. 2-6 zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1977-03-31

This report describes the fiscal 1976 research result on 2-6 group compound semiconductor solar cells for photovoltaic power generation systems. The research aims at the system less than 1/100 in cost. Vapor deposition resulted in failure to obtain high-efficiency cells. Vapor-phase growth revealed Cd-Te single-crystal solar cell is promising, however, resulted in failure to obtain high-efficiency thin film elements. Both chemical deposition and sintering succeeded in mass production of prototype high-efficiency elements equal in performance. However, since chemically deposited CdS film is too thin having higher serial resistance, it requires In{sub 2}O{sub 3} auxiliary transmissive electrodes on glass substrates. Since CdTe film and CdS film also require completely different vapor deposition processes in hetero- junction, chemical deposition is more disadvantageous in cost than sintering. CdTe thin film fabricated by screen printing/sintering is most promising. Since Cd is harmful to human bodies, study was made on pollution preventive measures in its production or use stage, and accidents or fires, obtaining some results. (NEDO)

Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

Science.gov (United States)

Wang, Shu-Yi

To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance

New mounting improves solar-cell efficiency

Science.gov (United States)

Shepard, N. F., Jr.

1980-01-01

Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

International Nuclear Information System (INIS)

Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

2007-01-01

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

Safe Haven CDS Premiums

DEFF Research Database (Denmark)

Klingler, Sven; Lando, David

Credit Default Swaps can be used to lower capital requirements of dealer banks who enter into uncollateralized derivatives positions with sovereigns. We show in a model that the regulatory incentive to obtain capital relief makes CDS contracts valuable to dealer banks and empirically that...... support that CDS contracts are used for capital relief....

Quantum dot solar cells

CERN Document Server

Wu, Jiang

2013-01-01

The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

Quantum dot solar cell

International Nuclear Information System (INIS)

Ahamefula, U.C.; Sulaiman, M.Y.; Sopian, K.; Ibarahim, Z.; Ibrahim, N.; Alghoul, M.A.; Haw, L.C.; Yahya, M.; Amin, N.; Mat, S.; Ruslan, M.H.

2009-01-01

Full text: The much awaited desire of replacing fossil fuel with photovoltaic will remain a fairy tale if the myriad of issues facing solar cell development are marginalized. Foremost in the list is the issue of cost. Silicon has reached a stage where its use on large scale can no longer be lavishly depended upon. The demand for high grade silicon from the microelectronics and solar industries has soared leading to scarcity. New approach has to be sought. Notable is the increased attention on thin films such as cadmium telluride, copper indium gallium diselenide, amorphous silicon, and the not so thin non-crystalline family of silicon. While efforts to address the issues of stability, toxicity and efficiency of these systems are ongoing, another novel approach is quietly making its appearance - quantum dots. Quantum dots seem to be promising candidates for solar cells because of the opportunity to manipulate their energy levels allowing absorption of a wider solar spectrum. Utilization of minute quantity of these nano structures is enough to bring the cost of solar cell down and to ascertain sustainable supply of useful material. The paper outlines the progress that has been made on quantum dot solar cells. (author)

Tau mRNA 3'UTR-to-CDS ratio is increased in Alzheimer disease.

Science.gov (United States)

García-Escudero, Vega; Gargini, Ricardo; Martín-Maestro, Patricia; García, Esther; García-Escudero, Ramón; Avila, Jesús

2017-08-10

Neurons frequently show an imbalance in expression of the 3' untranslated region (3'UTR) relative to the coding DNA sequence (CDS) region of mature messenger RNAs (mRNA). The ratio varies among different cells or parts of the brain. The Map2 protein levels per cell depend on the 3'UTR-to-CDS ratio rather than the total mRNA amount, which suggests powerful regulation of protein expression by 3'UTR sequences. Here we found that MAPT (the microtubule-associated protein tau gene) 3'UTR levels are particularly high with respect to other genes; indeed, the 3'UTR-to-CDS ratio of MAPT is balanced in healthy brain in mouse and human. The tau protein accumulates in Alzheimer diseased brain. We nonetheless observed that the levels of RNA encoding MAPT/tau were diminished in these patients' brains. To explain this apparently contradictory result, we studied MAPT mRNA stoichiometry in coding and non-coding regions, and found that the 3'UTR-to-CDS ratio was higher in the hippocampus of Alzheimer disease patients, with higher tau protein but lower total mRNA levels. Our data indicate that changes in the 3'UTR-to-CDS ratio have a regulatory role in the disease. Future research should thus consider not only mRNA levels, but also the ratios between coding and non-coding regions. Copyright © 2017 Elsevier B.V. All rights reserved.

Direct Z-scheme TiO2/CdS hierarchical photocatalyst for enhanced photocatalytic H2-production activity

Science.gov (United States)

Meng, Aiyun; Zhu, Bicheng; Zhong, Bo; Zhang, Liuyang; Cheng, Bei

2017-11-01

Photocatalytic H2 evolution, which utilizes solar energy via water splitting, is a promising route to deal with concerns about energy and environment. Herein, a direct Z-scheme TiO2/CdS binary hierarchical photocatalyst was fabricated via a successive ionic layer adsorption and reaction (SILAR) technique, and photocatalytic H2 production was measured afterwards. The as-prepared TiO2/CdS hybrid photocatalyst exhibited noticeably promoted photocatalytic H2-production activity of 51.4 μmol h-1. The enhancement of photocatalytic activity was ascribed to the hierarchical structure, as well as the efficient charge separation and migration from TiO2 nanosheets to CdS nanoparticles (NPs) at their tight contact interfaces. Moreover, the direct Z-scheme photocatalytic reaction mechanism was demonstrated to elucidate the improved photocatalytic performance of TiO2/CdS composite photocatalyst. The photoluminescence (PL) analysis of hydroxyl radicals were conducted to provide clues for the direct Z-scheme mechanism. This work provides a facile route for the construction of redox mediator-free Z-scheme photocatalytic system for photocatalytic water splitting.

Dye Sensitized Solar Cell, DSSC

Directory of Open Access Journals (Sweden)

Pongsatorn Amornpitoksuk

2003-07-01

Full Text Available A dye sensitized solar cell is a new type of solar cell. The operating system of this solar cell type is similar to plant’s photosynthesis process. The sensitizer is available for absorption light and transfer electrons to nanocrystalline metal oxide semiconductor. The ruthenium(II complexes with polypyridyl ligands are usually used as the sensitizers in solar cell. At the present time, the complex of [Ru(2,2',2'’-(COOH3- terpy(NCS3] is the most efficient sensitizer. The total photon to current conversion efficiency was approximately 10% at AM = 1.5.

Synthesis of hybrid organic–inorganic nanocomposite materials based on CdS nanocrystals for energy conversion applications

International Nuclear Information System (INIS)

Laera, A. M.; Resta, V.; Ferrara, M. C.; Schioppa, M.; Piscopiello, E.; Tapfer, L.

2011-01-01

Efficient solar energy conversion is strongly related to the development of new materials with enhanced functional properties. In this context, a wide variety of inorganic, organic, or hybrid nanostructured materials have been investigated. In particular, in hybrid organic–inorganic nanocomposites are combined the convenient properties of organic polymers, such as easy manipulation and mechanical flexibility, and the unique size-dependent properties of nanocrystals (NCs). However, applications of hybrid nanocomposites in photovoltaic devices require a homogeneous and highly dense dispersion of NCs in polymer in order to guarantee not only an efficient charge separation, but also an efficient transport of the carriers to the electrodes without recombination. In previous works, we demonstrated that cadmium thiolate complexes are suitable precursors for the in situ synthesis of nanocrystalline CdS. Here, we show that the soluble [Cd(SBz) 2 ] 2 ·(1-methyl imidazole) complex can be efficiently annealed in a conjugated polymer obtaining a nanocomposite with a regular and compact network of NCs. The proposed synthetic strategies require annealing temperatures well below 200 °C and short time for the thermal treatment, i.e., less than 30 min. We also show that the same complex can be used to synthesize CdS NCs in mesoporous TiO 2 . The adsorption of cadmium thiolate molecule in TiO 2 matrix can be obtained by using chemical bath deposition technique and subsequent thermal annealing. The use of NCs, quantum dots, as sensitizers of TiO 2 matrices represents a very promising alternative to common dye-sensitized solar cells and an interesting solution for heterogeneous photocatalysis.

Improved performance of low cost CuInS2 superstrate-type solar cells using Zinc assisted spray pyrolysis processing

Science.gov (United States)

Cheshme Khavar, Amir Hossein; Mahjoub, Ali Reza; Taghavinia, Nima

2017-12-01

Superstrate configuration CuInS2 (CIS) solar cells are fabricated using a spray pyrolysis method. We avoided selenization process, cyanide etching and CdS buffer layer, to keep the process ‘green’. CIS layers are formed by spray pyrolysis of an aqueous precursor ink containing metal chloride salts and thiourea at 350 °C. We investigated the effect of intentional Zn doping on structural, morphological and photovoltaic response of the fabricated CIS films by dissolving ZnCl2 in aqueous precursor solution. At a zinc doping level ranging between 0.25 and 1.00 mol%, Zn doping is found to improve the CIS crystal growth and surface morphology of CIS films. Compared with the performance of the non-doped CIS cell, the Zn-doped CIS solar cell displayed a remarkable efficiency enhancement of 58-97% and the maximum enhancement was obtained at a Zn content of 0.5 mol%. The device structure consists of    and show promising PCE of 4.29 % without any anti-reflection coating. Over the course of 300 d under ambient condition, the fabricated device showed only 1% loss in efficiency.

Dye Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Di Wei

2010-03-01

Full Text Available Dye sensitized solar cell (DSSC is the only solar cell that can offer both the flexibility and transparency. Its efficiency is comparable to amorphous silicon solar cells but with a much lower cost. This review not only covers the fundamentals of DSSC but also the related cutting-edge research and its development for industrial applications. Most recent research topics on DSSC, for example, applications of nanostructured TiO2, ZnO electrodes, ionic liquid electrolytes, carbon nanotubes, graphene and solid state DSSC have all been included and discussed.

Synthesis of CdS hollow/solid nanospheres and their chain-structures by membrane technique

International Nuclear Information System (INIS)

Duan Shumin; Wu Qingsheng; Jia Runping; Liu Xinbo

2008-01-01

CdS hollow/solid nanospheres and their chain-structures were successfully synthesized through supporting liquid membrane (SLM) system with bio-membrane. X-ray powder diffraction (XRD), transmission electron microscopy (TEM), UV-Vis spectroscopy, and photoluminescence (PL) spectroscopy have been used for the characterization of the products. The average diameters of CdS solid/hollow spheres are about 10, 40 nm, respectively. The wall of the hollow spheres is about 5 nm. CdS products are all cubic face-centered structure with the cell constant a = 5.830 A. We also explore the morphology, structure and possible synthesis mechanism. A possible template mechanism has been proposed for the production of the hollow CdS nanocrystals, that is, CdS nanoparticles grow along the non-soakage interface between CHCl3 and reactant solution. During this process, the organic functional groups were crucial to the control of crystal morphologies

Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

Directory of Open Access Journals (Sweden)

I. M. Dharmadasa

2014-06-01

Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

Quantum Dots for Solar Cell Application

Science.gov (United States)

Poudyal, Uma

Solar energy has been anticipated as the most important and reliable source of renewable energy to address the ever-increasing energy demand. To harvest solar energy efficiently, diverse kinds of solar cells have been studied. Among these, quantum dot sensitized solar cells have been an interesting group of solar cells mainly due to tunable, size-dependent electronic and optical properties of quantum dots. Moreover, doping these quantum dots with transition metal elements such as Mn opens avenue for improved performance of solar cells as well as for spin based technologies. In this dissertation, Mn-doped CdSe QDs (Mn-CdSe) have been synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method. They are used in solar cells to study the effect of Mn doping in the performance of solar cells. Incident photon to current-conversion efficiency (IPCE) is used to record the effect of Mn-doping. Intensity modulated photovoltage and photocurrent spectroscopy (IMVS/PS) has been used to study the carrier dynamics in these solar cells. Additionally, the magnetic properties of Mn-CdSe QDs is studied and its possible origin is discussed. Moreover, CdS/CdSe QDs have been used to study the effect of liquid, gel and solid electrolyte in the performance and stability of the solar cells. Using IPCE spectra, the time decay measurements are presented and the possible reactions between the QD and the electrolytes are explained.

Effects of CdCl2 on the growth of CdTe on CdS films for solar cells by isothermal close-spaced vapor transport

International Nuclear Information System (INIS)

Vaccaro, P.O.; Meyer, G.O.; Saura, J.

1991-01-01

CdS/CdTe solar cells were made by depositing CdTe films by an isothermal close-spaced vapor transport method on sintered CdS/glass substrates. The influence of amounts of CdCl2 ranging from 0 wt% to 8 wt% in the CdTe source on the solar cells performance was studied. Increasing the CdCl2 content enhances the CdTe grainsize but degrades the spectral response and increases the reverse saturation current. An optimal CdCl2 concentration of 1 wt% was found for a growth temperature of 620 deg C. (Author)

Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost/large-area module manufacturing technology - Development of high-reliability CdS/CdTe solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

Cost reduction for the above-named solar cells is the aim of this effort. On the basis of the results of past studies, a technology is established of fabricating a thin CdS film by subjecting a CdS film to organometal pyrolysis, and this brings about a decrease in photoabsorption loss in the range of waves shorter than 500nm and a decrease in in-film reflection loss for an increase in short-circuit current density. A proximity sublimation method is used for CdTe film fabrication, which improves on film quality and film adhesion. These efforts result in the achievement of a conversion efficiency of 16.0% which is the highest in the world. Studies are promoted in a process nearer to the ultimate form, and a 30cm times 60cm large CdTe solar cell is fabricated on the basis of a patterning technique, and the product attains a conversion efficiency of 9.8%. In fiscal 1998, studies center about the establishment of a film fabrication process for a medium-are substrate and about the enhancement of its conversion efficiency, and facilities capable of dealing with large-area substrates are introduced and operated. In a typical achievement, a CdTe solar cell is experimentally fabricated in a process which is wholly under normal pressure, and the product with an aperture area of 1376cm{sup 2} exhibits a conversion efficiency of 10.5% according to JQA (Japan Quality Assurance Organization). (NEDO)

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yubo; Zhang, Wenqing, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Youwei; Zhang, Jiawei; Xi, Lili [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Peihong, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260 (United States)

2016-05-21

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

Solar energy utilization by solar cells and superblack absorbers

Energy Technology Data Exchange (ETDEWEB)

Bonnet, D; Selders, M

1975-10-31

A review is presented of the physical principles responsible for the characteristics of solar cells, with particular reference to Si homojunction and CdS--Cu/sub 2/S thin film devices. Electric power generation from solar cells still appears uncompetitive economically except in special circumstances, but heating from solar energy using selective absorbers with low reemission is more promising.

Hybrid Perovskites: Prospects for Concentrator Solar Cells.

Science.gov (United States)

Lin, Qianqian; Wang, Zhiping; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

2018-04-01

Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley-Queisser limit stipulated for a single-junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge-carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy-conversion efficiencies under solar concentration, where they are able to exceed the Shockley-Queisser limit and exhibit strongly elevated open-circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications.

Industrial n-type solar cells with >20% cell efficiency

Energy Technology Data Exchange (ETDEWEB)

Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

2013-03-15

To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

Formation of a ZnS Zn S,O bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H. W.; Lux Steiner, M.C

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine, has helped to achieve a similar efficiency as respective CdS buffered reference devices. In order to shed light on the differences of other Zn compound buffers deposited in con...

Polymethylmethacrylate-based luminescent solar concentrators with bottom-mounted solar cells

International Nuclear Information System (INIS)

Zhang, Yi; Sun, Song; Kang, Rui; Zhang, Jun; Zhang, Ningning; Yan, Wenhao; Xie, Wei; Ding, Jianjun; Bao, Jun; Gao, Chen

2015-01-01

Graphical abstract: - Highlights: • Bottom-mounted luminescent solar concentrators on dye-doped plates were studied. • The mechanism of transport process was proposed. • The fabricated luminescent solar concentrator achieved a gain of 1.38. • Power conversion efficiency of 5.03% was obtained with cell area coverage of 27%. • The lowest cost per watt of $1.89 was optimized with cell area coverage of 18%. - Abstract: Luminescent solar concentrators offer an attractive approach to concentrate sunlight economically without tracking, but the narrow absorption band of luminescent materials hinders their further development. This paper describes bottom-mounted luminescent solar concentrators on dye-doped polymethylmethacrylate plates that absorb not only the waveguided light but also the transmitted sunlight and partial fluorescent light in the escape cone. A series of bottom-mounted luminescent solar concentrators with size of 78 mm × 78 mm × 7 mm were fabricated and their gain and power conversion efficiency were investigated. The transport process of the waveguided light and the relationship between the bottom-mounted cells were studied to optimize the performance of the device. The bottom-mounted luminescent solar concentrator with cell area coverage of 9% displayed a cell gain of 1.38, to our best knowledge, which is the highest value for dye-doped polymethylmethacrylate plate luminescent solar concentrators. Power conversion efficiency as high as 5.03% was obtained with cell area coverage of 27%. Furthermore, the bottom-mounted luminescent solar concentrator was found to have a lowest cost per watt of $1.89 with cell area coverage of 18%. These results suggested that the fabricated bottom-mounted luminescent solar concentrator may have a potential in low-cost building integrated photovoltaic application

Recent Advances in Organic Solar Cells

Directory of Open Access Journals (Sweden)

Thomas Kietzke

2007-01-01

Full Text Available Solar cells based on organic semiconductors have attracted much attention. The thickness of the active layer of organic solar cells is typically only 100 nm thin, which is about 1000 times thinner than for crystalline silicon solar cells and still 10 times thinner than for current inorganic thin film cells. The low material consumption per area and the easy processing of organic semiconductors offer a huge potential for low cost large area solar cells. However, to compete with inorganic solar cells the efficiency of organic solar cells has to be improved by a factor of 2-3. Several organic semiconducting materials have been investigated so far, but the optimum material still has to be designed. Similar as for organic light emitting devices (OLED small molecules are competing with polymers to become the material of choice. After a general introduction into the device structures and operational principles of organic solar cells the three different basic types (all polymer based, all small molecules based and small molecules mixed with polymers are described in detail in this review. For each kind the current state of research is described and the best of class reported efficiencies are listed.

Semiconductor materials for solar photovoltaic cells

CERN Document Server

Wong-Ng, Winnie; Bhattacharya, Raghu

2016-01-01

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

CdS nanoparticles/CeO_2 nanorods composite with high-efficiency visible-light-driven photocatalytic activity

International Nuclear Information System (INIS)

You, Daotong; Pan, Bao; Jiang, Fan; Zhou, Yangen; Su, Wenyue

2016-01-01

Graphical abstract: Coupling CdS with CeO_2 can effectively improve the light-harvesting ability of wide-band gap CeO_2 NRs as the photoinduced electrons on the conduction band of CdS are transfered to the conduction band of CeO_2. - Highlights: • Coupling CdS can effectively improve the light-harvesting ability of wide-band gap CeO_2. • CdS/CeO_2 composites show high photocatalytic activity under visible light irradiation. • The mechanism of photocatalytic H_2 evolution over CdS/CeO_2 was proposed. - Abstract: Different mole ratios of CdS nanoparticles (NPs)/CeO_2 nanorods (NRs) composites with effective contacts were synthesized through a two-step hydrothermal method. The crystal phase, microstructure, optical absorption properties, electrochemical properties and photocatalytic H_2 production activity of these composites were investigated. It was concluded that the photogenerated charge carriers in the CdS NPs/CeO_2 NRs composite with a proper mole ratio (1:1) exhibited the longest lifetime and highest separation efficiency, which was responsible for the highest H_2-production rate of 8.4 mmol h"−"1 g"−"1 under visible-light irradiation (λ > 420 nm). The superior photocatalytic H_2 evolution properties are attributed to the transfer of visible-excited electrons of CdS NPs to CeO_2 NRs, which can effectively extend the light absorption range of wide-band gap CeO_2 NRs. This work provides feasible routes to develop visible-light responsive CeO_2-based nanomaterial for efficient solar utilization.

Synthesis of water soluble CdS nanoparticles and study of their DNA damage activity

Directory of Open Access Journals (Sweden)

Kumar Suranjit Prasad

2017-05-01

Full Text Available This study reports a novel method for preparation of water soluble CdS nanoparticles using leaf extract of a plant, Asparagus racemosus. The extract of the leaf tissue which worked as a stabilizing and capping agent, assisted the formation of nanoparticles. Nanoparticles were characterized using a UV–vis spectrophotometer, Photoluminescence, TEM, EDAX, XRD and FT-IR. Transmission electron microscopy followed by selected area electron diffraction pattern analysis indicated the formation of spherical, polydispersed, crystalline, CdS of diameter ranging from 2 to 8 nm. X-ray diffraction studies showed the formation of 111, 220 and 311 planes of face-centered cubic (fcc CdS. EDAX analysis confirmed the presence of Cd and S in nanosphere. The cytotoxicity test using MTT assay as well as DNA damage analysis using comet assay revealed that synthesized nano CdS quantum dots (QDs caused less DNA damage and cell death of lymphocytes than pure CdS nanoparticles.

Preparation and Characterization of TiO2/CdS Layers as Potential Photoelectrocatalytic Materials

Directory of Open Access Journals (Sweden)

Teofil-Danut Silipas

2011-01-01

Full Text Available The TiO2/CdS semiconductor composites were prepared on
indium tin oxide (ITO substrates in di®erent mass proportions via wet-chemical techniques using bi-distilled water, acetyl-acetone, poly-propylene-glycol and Triton X-100 as additives. The composite layers were annealed in normal conditions at the temperature of 450±C, 120 min. with a rate of temperature increasing of 5±C/min. The structural and optical properties of all the TiO2/CdS ayers were characterized by X-ray di®raction, UV-VIS spectroscopy, spectrofluorimetry and FT/IR microscopy. The microstructural properties of the deposited TiO2/CdS layers can be modi¯ed by varying the mass proportions of TiO2:CdS. The good crystallinity level and the high optical adsorption of
the TiO2/CdS layers make them attractive for photoelectrochemical cell applications.

Microstructural and optical properties of CdS nanoparticles synthesized by sol gel method

Science.gov (United States)

Mahdi, Hadeel Salih; Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

2018-05-01

Semiconductor nanoparticles of CdS are of great interest for both fundamental research and industrial development due to their unique size-dependent optical and electronic properties and their exciting utilization in the fields of light-emitting diode, electro-chemical cells, laser, hydrogen producing catalyst, biological label. We present a scheme to measure the optical properties of CdS nanoparticles The peaks were indexed by powder-x software. The XRD pattern analysis showed that CdS composition was found to have hexagonal structure with well crystalline nature. the surface morphology and the composition of the samples were investigated by SEM (JEOL, japan). The image shows the presence of large spherical aggregates of smaller individual nanoparticles of various sizes for pure cds. to check the chemical composition of the material, energy dispersive X-ray (EDX) spectroscopic analysis was also performed which further confirmed the presence of cd and s ions in the matrix. The optical absorption spectra of CdS sample was recorded by uv-vis spectrophotometer in the range of 200 to 800 nm.

Fabrication of polymer/cadmium sulfide hybrid solar cells [P3HT:CdS and PCPDTBT:CdS] by spray deposition.

Science.gov (United States)

Kumar, Neetesh; Dutta, Viresh

2014-11-15

This paper investigates fabrication of surfactant free CdS nanoparticles (NPs) and application in the fabrication of P3HT:CdS and PCPDTBT:CdS bulk-heterojunction hybrid solar cells using high-throughput, large-area, low cost spray deposition technique. Both the hybrid active layers and hole transport layers are deposited by spray technique. The CdS/Poly(3-hexylthiophene-2,5-diyl) (P3HT) and CdS/Poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT) hybrid devices are fabricated by spray deposition process at optimized conditions (i.e. film thickness, spray solution volume, distance between sample and spray nozzle, substrate temperature, etc.). The power conversion efficiency of η=0.6% and 1.02% is obtained for P3HT:CdS and PCPDTBT:CdS hybrid devices, respectively. Spray coating holds significant promise as a technique capable of fabricating large-area, high performance hybrid solar cells. Copyright © 2014 Elsevier Inc. All rights reserved.

Quantum-Tuned Multijunction Solar Cells

Science.gov (United States)

Koleilat, Ghada I.

Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

Theoretical investigation on heterojunction solar cell

International Nuclear Information System (INIS)

Prema, K.; Geetha, K.

1986-11-01

The study of thin film solar cells has proved that the surface is rough. A two-dimensional method based on the integral equation technique to analyse thin film solar cells has been developed by DeMey et al. In this paper we present our analysis of a thin film solar cell using the above techniques. Variation of the minority carrier concentration, the saturation current and the junction current of the solar cell with surface roughness is presented. (author). 8 refs, 4 figs

Strasbourg Astronomical Data Center (CDS

Directory of Open Access Journals (Sweden)

F Genova

2013-01-01

Full Text Available The Centre de Donnees astronomiques de Strasbourg (CDS, created in 1972, has been a pioneer in the dissemination of digital scientific data. Ensuring sustainability for several decades has been a major issue because science and technology evolve continuously and the data flow increases endlessly. The paper briefly describes CDS activities, major services, and its R&D strategy to take advantage of new technologies. The next frontiers for CDS are the new Web 2.0/3.0 paradigm and, at a more general level, global interoperability of astronomical on-line resources in the Virtual Observatory framework.

Solar cell materials developing technologies

CERN Document Server

Conibeer, Gavin J

2014-01-01

This book presents a comparison of solar cell materials, including both new materials based on organics, nanostructures and novel inorganics and developments in more traditional photovoltaic materials. It surveys the materials and materials trends in the field including third generation solar cells (multiple energy level cells, thermal approaches and the modification of the solar spectrum) with an eye firmly on low costs, energy efficiency and the use of abundant non-toxic materials.

Rehydrating dye sensitized solar cells

Directory of Open Access Journals (Sweden)

Christian Hellert

2017-05-01

Full Text Available Dye sensitized solar cells (DSSCs are silicon free, simply producible solar cells. Longevity, however, is a longstanding problem for DSSCs. Due to liquid electrolytes being commonly used, evaporation of the electrolyte causes a dramatic drop in electric output as cells continue to be used unmaintained. Stopping evaporation has been tried in different ways in the past, albeit with differing degrees of success. In a recent project, a different route was chosen, exploring ways of revitalizing DSSCs after varying periods of usage. For this, we focused on rehydration of the cells using distilled water as well as the electrolyte contained in the cells. The results show a significant influence of these rehydration procedures on the solar cell efficiency. In possible applications of DSSCs in tents etc., morning dew may thus be used for rehydration of solar cells. Refillable DSSCs can also be used in tropical climates or specific types of farms and greenhouses where high humidity serves the purpose of rehydrating DSSCs.

Development of Inorganic Solar Cells by Nanotechnology

Institute of Scientific and Technical Information of China (English)

Yafei Zhang; Huijuan Geng; Zhihua Zhou; Jiang Wu; Zhiming Wang; Yaozhong Zhang; Zhongli Li; Liying Zhang; Zhi Yang; Huey Liang Hwang

2012-01-01

Inorganic solar cells, as durable photovoltaic devices for harvesting electric energy from sun light,have received tremendous attention due to the fear of exhausting the earth’s energy resources and damaging the living environment due to greenhouse gases. Some recent developments in nanotechnology have opened up new avenues for more relevant inorganic solar cells produced by new photovoltaic conversion concepts and effective solar energy harvesting nanostructures. In this review, the multiple exciton generation effect solar cells, hot carrier solar cells, one dimensional material constructed asymmetrical schottky barrier arrays, noble nanoparticle induced plasmonic enhancement, and light trapping nanostructured semiconductor solar cells are highlighted.

Enhancement of visible light photocatalytic activity of ZnS and CdS nanoparticles based on organic and inorganic coating

Energy Technology Data Exchange (ETDEWEB)

Soltani, Nayereh, E-mail: nayereh.soltani@gmail.com [Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Saion, Elias; Yunus, W. Mahmood Mat; Erfani, Maryam; Navasery, Manizheh; Bahmanrokh, Ghazaleh [Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Rezaee, Kadijeh [Department of Nuclear Engineering, Faculty of Advance Sciences and Technologies, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

2014-01-30

Coating of ZnS and CdS nanoparticles with organic and inorganic materials can extend their light absorption in the visible region and their stability against photo-corrosion. Such materials could emerge as excellent photocatalysts for the elimination of pollutants from aqueous media using solar energy. In this study, PVP (polyvinyl pyrrolidone)-capped ZnS and CdS nanoparticles, ZnS/CdS and CdS/ZnS core shell nanoparticles were synthesized by microwave irradiation method and characterized using different techniques. The XRD patterns exhibited cubic and hexagonal structures for coated ZnS and CdS nanoparticles, respectively. Morphological evaluation of TEM images showed that the nanoparticles are generally spherical in shape. The UV–visible spectra confirmed a shift in the band gap of coated nanoparticles to longer or shorter wavelengths due to size and potential-well effects. The photocatalytic activity of nanoparticles toward dye degradation under visible light was found to be improved after coating. PVP-capped ZnS and CdS exhibited an enhancement in the initial methylene blue degradation efficiency by a factor of about 1.3. ZnS nanoparticles coated by CdS displayed the initial efficiency 3.2 times higher than bare ZnS. The maximum dye removal was obtained in presence of CdS/ZnS core shells which is 1.4 times more efficient than bare CdS.

Photon management in solar cells

CERN Document Server

Rau, Uwe; Gombert, Andreas

2015-01-01

Written by renowned experts in the field of photon management in solar cells, this one-stop reference gives an introduction to the physics of light management in solar cells, and discusses the different concepts and methods of applying photon management. The authors cover the physics, principles, concepts, technologies, and methods used, explaining how to increase the efficiency of solar cells by splitting or modifying the solar spectrum before they absorb the sunlight. In so doing, they present novel concepts and materials allowing for the cheaper, more flexible manufacture of solar cells and systems. For educational purposes, the authors have split the reasons for photon management into spatial and spectral light management. Bridging the gap between the photonics and the photovoltaics communities, this is an invaluable reference for materials scientists, physicists in industry, experimental physicists, lecturers in physics, Ph.D. students in physics and material sciences, engineers in power technology, appl...

Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

NARCIS (Netherlands)

Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

Predicted solar cell edge radiation effects

International Nuclear Information System (INIS)

Gates, M.T.

1993-01-01

The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

Emitter/absorber interface of CdTe solar cells

Energy Technology Data Exchange (ETDEWEB)

Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2016-06-21

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

High performance a-Si solar cells and new fabrication methods for a-Si solar cells

Science.gov (United States)

Nakano, S.; Kuwano, Y.; Ohnishi, M.

1986-12-01

The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

Hybrid emitter all back contact solar cell

Science.gov (United States)

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

Quantum dot sensitized solar cells fabricated by means of a novel inorganic spinel nanoparticle

Science.gov (United States)

Jalali-Moghadam, Elnaz; Shariatinia, Zahra

2018-05-01

A novel inorganic spinel compound with formula Zn0.5184La0.7859Ce0.3994Al1.0026O4 (ZLCA) was synthesized by the gel combustion method and its exact formula was approved by the XPS analysis. The TEM image exhibited that the ZLCA NPs were very fine, spherical and slightly agglomerated particles with their particle size changed in the range of ∼5-20 nm. Then, several quantum dot-sensitized solar cells (QDSSCs) were fabricated using this new compound which was doped into the TiO2 pastes of photoanodes and subsequently the CdS, CdS and ZnS layers were deposited on the ZLCA-doped TiO2 layer by the SILAR and the CBD methods. Results indicated that the photovoltaic parameters of the optimized cell (η = 3.50%, JSC = 11.690 mA·cm-2) were boosted compared with those of the reference cell which was free of ZLCA NPs (η = 2.14%, JSC = 7.075 mA·cm-2) indicating rather high improvements of approximately 64 and 65% in the efficiency and short-circuit current density, respectively. The UV-Vis absorption spectra of all nanocomposite photoanodes revealed broad absorption bands between ∼320 and 600 nm. The lowest intensity of the photoluminescence peak for the CdSe cell fabricated using 0.6%ZLCA suggested that it had the least charge recombination and the easiest electron transfer which was confirmed by the J-V and efficiency results. The Electrochemical impedance spectra (EIS) illustrated that the charge transfer resistances (RCT) of cells were dropped by addition of the ZLCA into the TiO2 compared with that of the cell made without using ZLCA NPs. The RCT resistance was 1900 Ω for pure TiO2 but it was decreased to 81.6 Ω in the optimized cell containing 0.6%wt of ZLCA. Thus, it could be decided that doping 0.6%wt ZLCA was appropriate to attain suitable photocurrent efficiency for the QDSSCs because it was used in a minimum quantity to accelerate the electron transport, decrease the recombination and increase the cell efficiency.

Semiconductor quantum dot-sensitized solar cells.

Science.gov (United States)

Tian, Jianjun; Cao, Guozhong

2013-10-31

Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

Industrial Silicon Wafer Solar Cells

OpenAIRE

Neuhaus, Dirk-Holger; Münzer, Adolf

2007-01-01

In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

Flexible silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

2009-08-15

In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

Solar cells: An environment-benign energy source?

International Nuclear Information System (INIS)

Alsema, E.; Van Engelenburg, B.

1993-01-01

Attention is paid to a study on the environmental aspects of solar cell production techniques and the possibility of recycling solar cell materials. In the study the following types of solar cell modules are dealt with: CdTe and CuInSe 2 , amorphous silicon, crystalline silicon, and GaAs. It appears that silicon solar cells have minor environmental effects and are controllable. However, attention should be paid to the energy consumption and the use of etching and purification materials during the production of solar cells, and the emission of heavy metals from f.e. CdTe/CIS solar cells during and after usage. Without effective recycling enough supplies of indium, selenium and tellurium cannot be guaranteed. 3 figs., 1 ill

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Science.gov (United States)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

Iron sulphide solar cells

Science.gov (United States)

Ennaoui, A.; Tributsch, H.

1984-12-01

The abundant, naturally occurring natural compound pyrite (FeS2) can be used as a semiconducting material for photoelectrochemical and photovoltaic solar cells. Unlike most of the intensively studied photoactive materials, pyrite solar cell production would never be limited by the availability of the elements or by their compatibility with the environment. An energy gap of 0.95 eV has been determined for pyrite, and it is noted that the theoretical efficiency limit for solar energy conversion in this material is of the order of 15-20 percent.

Mn2+ anchored CdS polymer nanocomposites: An efficient alternative for Mn2+ doped CdS nanoparticles

International Nuclear Information System (INIS)

Saikia, Bhaskar Jyoti; Nath, Bikash Chandra; Borah, Chandramika; Dolui, Swapan Kumar

2015-01-01

A chelating bi-functional polymer brushes was prepared via atom transfer radical polymerization using grafting-from methodology. Mn 2+ -anchored CdS-polymer nanocomposites were synthesized using this graft copolymer by simple chelation method resulting in emission at about 620 nm which originates from the fluorescence of manganese ions embedded on the surface of CdS nanoparticles. This method provides an efficient straightforward substitute of Mn 2+ dopped CdS nanoparticles. Optical properties of the composites were investigated which indicates that simple Mn 2+ chelation and subsequent binding of CdS in a polymer matrix can have similar effect in the luminescence property as those synthesized via complex doping methods. Moreover this methodology can be applied for synthesis of any metal anchored nanocomposites proficiently and cost effectively in large-scale production. - Highlights: • A chelating bifunctional copolymer brush was synthesized via ATRP. • CdS nanoparticles and Mn 2+ were coupled with the bifunctional polymer. • Composites showed emission properties similar to Mn 2+ doped CdS nanoparticles. • Side chain length of the polymers also affect the emission properties of the composites.

Biosynthesis of CdS nanoparticles: A fluorescent sensor for sulfate-reducing bacteria detection.

Science.gov (United States)

Qi, Peng; Zhang, Dun; Zeng, Yan; Wan, Yi

2016-01-15

CdS nanoparticles were synthesized with an environmentally friendly method by taking advantage of the characteristic metabolic process of sulfate-reducing bacteria (SRB), and used as fluorescence labels for SRB detection. The presence of CdS nanoparticles was observed within and immediately surrounded bacterial cells, indicating CdS nanoparticles were synthesized both intracellularly and extracellularly. Moreover, fluorescent properties of microbial synthesized CdS nanoparticles were evaluated for SRB detection, and a linear relationship between fluorescence intensity and the logarithm of bacterial concentration was obtained in the range of from 1.0×10(2) to 1.0×10(7)cfu mL(-1). The proposed SRB detection method avoided the use of biological bio-recognition elements which are easy to lose their specific recognizing abilities, and the bacterial detection time was greatly shortened compared with the widely used MPN method which would take up to 15 days to accomplish the detection process. Copyright © 2015 Elsevier B.V. All rights reserved.

Synthesis of CdS nanocrystals with different morphologies via an ultraviolet irradiation route

International Nuclear Information System (INIS)

Yao Suwei; Han Yuxin; Liu Weixing; Zhang Weiguo; Wang Hongzhi

2007-01-01

A simple ultraviolet photochemical reduction synthetic approach to preparing CdS nanocrystals with different morphologies is described. Sodium dodecyl sulfate (SDS) was used as soft template for the chemical synthesis of CdS nanocrystals in a mixture solution at room temperature. It was found that the magnetic force stirring and the volume proportions of C 2 H 5 OH and H 2 O had marked influences on the morphology of CdS nanocrystals (such as spherical, acicular-like, rod-like and worm-like shapes). The formation of CdS is via precipitation of Cd 2+ ions with the homogeneously released S 2- ions from decomposition of thioacetamide under ultraviolet irradiation source. X-ray diffraction (XRD), scanning electron microscopy (SEM) and the ultraviolet-visible (UV-vis) absorption spectra were employed to characterize the products. This novel method is expected to produce various semiconductor nanocrystals with potential applications in the fields of materials science and photovoltaic cells, etc

Machine for welding solar cell connections

Energy Technology Data Exchange (ETDEWEB)

Lorans, D.Y.

1977-08-09

A machine for welding a connection wire over a solar cell electrode is described which comprises a base, a welding mount for the solar cell which is supported on the base, means for holding the solar cell on the welding mount, welding electrodes, means to lower the welding electrodes over the solar cell and the connection wire superimposed thereon, means for applying electric current pulses to said welding electrodes. It is characterized by the fact that it further comprises means for imparting to said mount an alternating transverse movement in relation to said base before and during the welding operation.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells.

Science.gov (United States)

Etgar, Lioz

2013-02-04

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Directory of Open Access Journals (Sweden)

Lioz Etgar

2013-02-01

Full Text Available Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

Semiconductor Nanocrystals as Light Harvesters in Solar Cells

Science.gov (United States)

Etgar, Lioz

2013-01-01

Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

Nanostructuring of Solar Cell Surfaces

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.

Flexible Solar Cells

Science.gov (United States)

1994-01-01

Solar cell "modules" are plastic strips coated with thin films of photovoltaic silicon that collect solar energy for instant conversion into electricity. Lasers divide the thin film coating into smaller cells to build up voltage. Developed by Iowa Thin Film Technologies under NASA and DOE grants, the modules are used as electrical supply for advertising displays, battery rechargers for recreational vehicles, and to power model airplanes. The company is planning other applications both in consumer goods and as a power source in underdeveloped countries.

Extended Temperature Solar Cell Technology Development

Science.gov (United States)

Landis, Geoffrey A.; Jenkins, Phillip; Scheiman, David; Rafaelle, Ryne

2004-01-01

Future NASA missions will require solar cells to operate both in regimes closer to the sun, and farther from the sun, where the operating temperatures will be higher and lower than standard operational conditions. NASA Glenn is engaged in testing solar cells under extended temperature ranges, developing theoretical models of cell operation as a function of temperature, and in developing technology for improving the performance of solar cells for both high and low temperature operation.

Crossed BiOI flake array solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Kewei; Jia, Falong; Zhang, Lizhi [Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, College of Chemistry, Central China Normal University, Wuhan (China); Zheng, Zhi [Institute of Surface Micro and Nano Materials, Xuchang University (China)

2010-12-15

We report a new kind of solar cell based on crossed flake-like BiOI arrays for the first time. The BiOI flake arrays were fabricated on an FTO glass with a TiO{sub 2} block layer at room temperature by successive ionic layer adsorption and reaction (SILAR) method. The resulting BiOI flake array solar cell exhibited enhanced photovoltaic performance under solar illumination. This work provides an attractive and new solar cell system and a facile route to fabricate low cost and non-toxic solar cell. (author)

Characterization of multicrystalline solar cells

International Nuclear Information System (INIS)

Malik, A.Q.; Chong Chew Hah; Chan Siang Khwang; Tan Kha Sheng; Lim Chee Ming

2006-01-01

The evaluation and assessment of the performance of photovoltaic (PV) cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Most noticeable of all these parameters in the PV conversion efficiency η, defined as the maximum electrical power P max produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (Sc). These conditions refer to the spectrum (AM 1.5), solar radiation intensity (1000 Wm -2 ), cell temperature (25 ± 2 degree C) and wind speed (2 mph). Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstrate that the short circuit current (I SC ) of the solar cell decreases when irradiance is less than 1000 Wm -2 irrespective of the working temperature of the cell

Characterisation of multicrystalline solar cells

Directory of Open Access Journals (Sweden)

A.Q. Malik

2017-10-01

Full Text Available The evaluation and assessment of the performance of photovoltaic (PV cells in terms of measurable parameters requires the measurement of the current as a function of voltage, temperature, intensity, wind speed and spectrum. Mo st noticeable of all these parameters is the PV conversion efficiency η, defined as the maximum electrical power Pmax produced by the PV cell divided by the incident photon power P in which is measured with respect to standard test conditions (STC. These conditions refer to the spectrum (AM 1.5, solar radiation intensity (1000 Wm-2, cell temperature (25 ±2oC and wind speed (2 mph. Tests under STC are carried out in the laboratory at a controlled environment. There have been several studies that analyze uncertainties in the laboratory measurement of solar cell efficiencies using different solar simulators and their transference to operational situations. Our preliminary results demonstratethat the short circuit current (ISC of the solar cell decreases when irradiance is less than 1000 Wm-2 irrespective of the working temperature of the cell.

Perovskite Solar Cells: Progress and Advancements

Directory of Open Access Journals (Sweden)

Naveen Kumar Elumalai

2016-10-01

Full Text Available Organic–inorganic hybrid perovskite solar cells (PSCs have emerged as a new class of optoelectronic semiconductors that revolutionized the photovoltaic research in the recent years. The perovskite solar cells present numerous advantages include unique electronic structure, bandgap tunability, superior charge transport properties, facile processing, and low cost. Perovskite solar cells have demonstrated unprecedented progress in efficiency and its architecture evolved over the period of the last 5–6 years, achieving a high power conversion efficiency of about 22% in 2016, serving as a promising candidate with the potential to replace the existing commercial PV technologies. This review discusses the progress of perovskite solar cells focusing on aspects such as superior electronic properties and unique features of halide perovskite materials compared to that of conventional light absorbing semiconductors. The review also presents a brief overview of device architectures, fabrication methods, and interface engineering of perovskite solar cells. The last part of the review elaborates on the major challenges such as hysteresis and stability issues in perovskite solar cells that serve as a bottleneck for successful commercialization of this promising PV technology.

High Radiation Resistance IMM Solar Cell

Science.gov (United States)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Work Station For Inverting Solar Cells

Science.gov (United States)

Feder, H.; Frasch, W.

1982-01-01

Final work station along walking-beam conveyor of solar-array assembly line turns each pretabbed solar cell over, depositing it back-side-up onto landing pad, which centers cell without engaging collector surface. Solar cell arrives at inverting work station collector-side-up with two interconnect tabs attached to collector side. Cells are inverted so that second soldering operation takes place in plain view of operator. Inversion protects collector from damage when handled at later stages of assembly.

Development of an Embedded Solar Tracker using Compact RIO

Energy Technology Data Exchange (ETDEWEB)

Oh, Seung Jin; Lee, Yoon Joon; Chun, Won Gee [Jeju National University, Jeju (Korea, Republic of)

2011-08-15

An embedded two-axis solar tracking system using LabVIEW to write the operation and control algorithms was developed for enhancing solar energy utilization. The system consists of a real-time processor, two motion- control modules, two step drives, two step motors, feedback devices, and other accessories needed for functional stability. The real-time processor allows the solar tracker to be used as a stand-alone, real-time system that can operate automatically without any external control. The system combines two different solar tracking methods: the optical method and the astronomical method. CdS sensors are employed to continuously generate feedback signals to the controller, ensuring high-precision solar tracking even under adverse conditions. CdS sensor is a resistor whose resistance decreases with increasing incident light intensity. A database of solar altitude, azimuth, and sunrise and sunset times is provided by this solar tracking system. Other solar trackers operating in an astronomical method may access and use this database over the Internet. Solar position and sunrise and sunset times in the database were compared with those of the Astronomical Applications Department of the U.S. Naval Observatory. The differences were found to be negligible.

Development of an Embedded Solar Tracker using Compact RIO

International Nuclear Information System (INIS)

Oh, Seung Jin; Lee, Yoon Joon; Chun, Won Gee

2011-01-01

An embedded two-axis solar tracking system using LabVIEW to write the operation and control algorithms was developed for enhancing solar energy utilization. The system consists of a real-time processor, two motion- control modules, two step drives, two step motors, feedback devices, and other accessories needed for functional stability. The real-time processor allows the solar tracker to be used as a stand-alone, real-time system that can operate automatically without any external control. The system combines two different solar tracking methods: the optical method and the astronomical method. CdS sensors are employed to continuously generate feedback signals to the controller, ensuring high-precision solar tracking even under adverse conditions. CdS sensor is a resistor whose resistance decreases with increasing incident light intensity. A database of solar altitude, azimuth, and sunrise and sunset times is provided by this solar tracking system. Other solar trackers operating in an astronomical method may access and use this database over the Internet. Solar position and sunrise and sunset times in the database were compared with those of the Astronomical Applications Department of the U.S. Naval Observatory. The differences were found to be negligible

Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

International Nuclear Information System (INIS)

Nichterwitz, Melanie

2012-01-01

This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

Semi-transparent solar cells

International Nuclear Information System (INIS)

Sun, J; Jasieniak, J J

2017-01-01

Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies. (topical review)

Semi-transparent solar cells

Science.gov (United States)

Sun, J.; Jasieniak, J. J.

2017-03-01

Semi-transparent solar cells are a type of technology that combines the benefits of visible light transparency and light-to-electricity conversion. One of the biggest opportunities for such technologies is in their integration as windows and skylights within energy-sustainable buildings. Currently, such building integrated photovoltaics (BIPV) are dominated by crystalline silicon based modules; however, the opaque nature of silicon creates a unique opportunity for the adoption of emerging photovoltaic candidates that can be made truly semi-transparent. These include: amorphous silicon-, kesterite-, chalcopyrite-, CdTe-, dye-sensitized-, organic- and perovskite- based systems. For the most part, amorphous silicon has been the workhorse in the semi-transparent solar cell field owing to its established, low-temperature fabrication processes. Excitement around alternative classes, particularly perovskites and the inorganic candidates, has recently arisen because of the major efficiency gains exhibited by these technologies. Importantly, each of these presents unique opportunities and challenges within the context of BIPV. This topic review provides an overview into the broader benefits of semi-transparent solar cells as building-integrated features, as well as providing the current development status into all of the major types of semi-transparent solar cells technologies.

Proton irradiation effects of amorphous silicon solar cell for solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

1997-03-01

Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

Cadmium free high efficiency Cu2ZnSn(S,Se4 solar cell with Zn1−xSnxOy buffer layer

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-06-01

Full Text Available We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool (ADEPT2.1 and the device performances of a thin film solar cell based on Cu2ZnSn(S,Se4 (CZTSSe absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO:Al/i-ZnO/Zn1-xSnxOy (ZTO/CZTSSe/Mo/SLG stack, a graded space charge region (SCR and an inverted surface layer (ISL were inserted between the buffer and the absorber. The cadmium (Cd free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, Voc without deteriorating the short-circuit current density, Jsc. The optimized solar cell performance parameters including Voc, Jsc, fill factor (FF, and efficiency (η were calculated from the current density-voltage curve, also known as J–V characteristic curve. The FF was determined as 73.17%, which in turns, yields a higher energy conversion efficiency of 14.09%.

Formation and electronic properties of In2S3/Cu(In,Ga)Se2 junctions and related thin film solar cells

International Nuclear Information System (INIS)

Pistor, Paul

2009-01-01

In this work, thermally evaporated In 2 S 3 thin films have been used as buffer layers in Cu(In,Ga)Se 2 solar cells. The state of the art Cu(In,Ga)Se 2 solar cell with CdS buffer layer was the starting point for this work and the role of the buffer layer as well as alternative buffer layer concepts were introduced in the beginning, together with some theoretical considerations needed for the physical interpretation of solar cell parameters. High quality, crystalline In 2+x S 3 was successfully synthesised and used as a reference material for the structural characterisation of In 2 S 3 . Three modifications with tetragonal, cubic and trigonal symmetry were identified and characterised with X-ray diffraction (XRD) measurements in the temperature range from 31 C to 1040 C. A refinement by the Rietveld method was performed, extending the existing literature data on the structure of In 2 S 3 . Resulting In 2 S 3 thin films were stoichiometric and homogeneous with an indirect optical bandgap of (1.99±0.5) eV. The utilisation of crystalline, single phase source material and the development of appropriate buffer processing led to high efficiency solar cells. A key process for optimal device performance was post deposition annealing of the completed solar cells for 35 min. to 55 min. at a temperature of 200 C. Annealing was found to improve mainly the fill factor and open circuit voltage of devices with an In 2 S 3 buffer, independent of the atmosphere in which the annealing was carried out (e.g. in air or inert gas). The controlled and reproducible enhancement of the device performance during annealing allowed coherent analysis of the changes in the photo-generated charge carrier collection and the dominant recombination mechanism of the solar cell devices. Losses in the spectral response upon annealing observed at long wavelengths (700-1200 nm) were attributed to a reduction of the space charge region width at the In 2 S 3 /Cu(In,Ga)Se 2 junction. Prior to annealing, it

Thin-film solar cells

International Nuclear Information System (INIS)

Aberle, Armin G.

2009-01-01

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

Probing the fungicidal property of CdS quantum dots on Saccharomyces cerevisiae and Candida utilis using MALDI-MS

Energy Technology Data Exchange (ETDEWEB)

Manikandan, Muthu; Wu, Hui-Fen, E-mail: hwu@faculty.nsysu.edu.tw [National Sun Yat-Sen University, Department of Chemistry (China)

2013-07-15

For the first time, we report the successful application of inhouse synthesized CdS quantum dots (QDs) with particle sizes between 1 and 7 nm exhibiting excellent fungicidal activity based on the interactions with Saccharomyces cerevisiae and Candida utilis. The growth curves and the growth rates of both fungi were established in the presence of three varying concentrations of CdS QDs. It was observed that the CdS QDs were highly inhibitory even at the lowest concentration of 10 mg/L used in this study, while the untreated control cells followed a normal growth pattern in the cases of both Saccharomyces and Candida. MALDI-MS was applied to substantiate the observations obtained by direct cell count method. It was observed that the trend observed in the case of Saccharomyces and Candida was well-represented in the MALDI-MS spectra. This study proposes a mechanism for the first time based on MALDI-MS results, that the CdS QDs interact with the extracellular polymeric substances (EPS) and remove small molecules from EPS layer; on the other hand, it was observed that CdS QDs at all concentrations lead to enrichment of protein signals in MALDI-MS. We have substantiated these results by quantifying the EPS in the control and treated cells and also using TEM to further confirm the results.

Probing the fungicidal property of CdS quantum dots on Saccharomyces cerevisiae and Candida utilis using MALDI-MS

International Nuclear Information System (INIS)

Manikandan, Muthu; Wu, Hui-Fen

2013-01-01

For the first time, we report the successful application of inhouse synthesized CdS quantum dots (QDs) with particle sizes between 1 and 7 nm exhibiting excellent fungicidal activity based on the interactions with Saccharomyces cerevisiae and Candida utilis. The growth curves and the growth rates of both fungi were established in the presence of three varying concentrations of CdS QDs. It was observed that the CdS QDs were highly inhibitory even at the lowest concentration of 10 mg/L used in this study, while the untreated control cells followed a normal growth pattern in the cases of both Saccharomyces and Candida. MALDI-MS was applied to substantiate the observations obtained by direct cell count method. It was observed that the trend observed in the case of Saccharomyces and Candida was well-represented in the MALDI-MS spectra. This study proposes a mechanism for the first time based on MALDI-MS results, that the CdS QDs interact with the extracellular polymeric substances (EPS) and remove small molecules from EPS layer; on the other hand, it was observed that CdS QDs at all concentrations lead to enrichment of protein signals in MALDI-MS. We have substantiated these results by quantifying the EPS in the control and treated cells and also using TEM to further confirm the results

CdS nanoparticles/CeO{sub 2} nanorods composite with high-efficiency visible-light-driven photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

You, Daotong; Pan, Bao; Jiang, Fan; Zhou, Yangen; Su, Wenyue, E-mail: suweny@fzu.edu.cn

2016-02-15

Graphical abstract: Coupling CdS with CeO{sub 2} can effectively improve the light-harvesting ability of wide-band gap CeO{sub 2} NRs as the photoinduced electrons on the conduction band of CdS are transfered to the conduction band of CeO{sub 2}. - Highlights: • Coupling CdS can effectively improve the light-harvesting ability of wide-band gap CeO{sub 2}. • CdS/CeO{sub 2} composites show high photocatalytic activity under visible light irradiation. • The mechanism of photocatalytic H{sub 2} evolution over CdS/CeO{sub 2} was proposed. - Abstract: Different mole ratios of CdS nanoparticles (NPs)/CeO{sub 2} nanorods (NRs) composites with effective contacts were synthesized through a two-step hydrothermal method. The crystal phase, microstructure, optical absorption properties, electrochemical properties and photocatalytic H{sub 2} production activity of these composites were investigated. It was concluded that the photogenerated charge carriers in the CdS NPs/CeO{sub 2} NRs composite with a proper mole ratio (1:1) exhibited the longest lifetime and highest separation efficiency, which was responsible for the highest H{sub 2}-production rate of 8.4 mmol h{sup −1} g{sup −1} under visible-light irradiation (λ > 420 nm). The superior photocatalytic H{sub 2} evolution properties are attributed to the transfer of visible-excited electrons of CdS NPs to CeO{sub 2} NRs, which can effectively extend the light absorption range of wide-band gap CeO{sub 2} NRs. This work provides feasible routes to develop visible-light responsive CeO{sub 2}-based nanomaterial for efficient solar utilization.

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Development of Inorganic Solar Cells by Nano-technology

Institute of Scientific and Technical Information of China (English)

Yafei Zhang; HueyLiang Hwang; Huijuan Geng; Zhihua Zhou; Jiang Wu; Zhiming Wang; Yaozhong Zhang; Zhongli Li; Liying Zhang; Zhi Yang

2012-01-01

Inorganic solar cells, as durable photovoltaic devices for harvesting electric energy from sun light, have received tremendous attention due to the fear of exhausting the earth’s energy resources and damaging the living environment due to greenhouse gases. Some recent developments in nanotechnology have opened up new avenues for more relevant inorganic solar cells produced by new photovoltaic conversion concepts and effective solar energy harvesting nanostructures. In this review, the multiple exciton generation effect solar cells, hot carrier solar cells, one dimensional material constructed asymmetrical schottky barrier arrays, noble nanoparticle induced plasmonic enhancement, and light trapping nanostructured semiconductor solar cells are highlighted.

Challenges in amorphous silicon solar cell technology

NARCIS (Netherlands)

Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

2000-01-01

Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

The importance of gold-electrode-adjacent stationary high-field Boeer domains for the photoconductivity of CdS

Energy Technology Data Exchange (ETDEWEB)

Boeer, Karl Wolfgang [Department of Physics and Astronomy, University of Delaware, Newark, DE (United States)

2015-06-15

When the electron density decreases stronger than linearly with the electric field in photoconductive CdS due to field quenching, high-field domains must occur that remain attached to either the cathode or anode in slit electrode geometry with blocking cathodes. These Boeer domains{sup 1} are easily seen by their shift in optical absorption due to the Franz-Keldysh effect and offer unique opportunities to analyze field dependent parameters within the range of constant electron density and electric field, such as the carrier density or mobility as a function of the field, and give information of the light dependent work function. They also provide insight why a 200 Aa thick cover layer of CdS on top of a CdTe solar cell increases its efficiency from 8 to 16%. The behavior of these Boeer domains escapes conventional current voltage analyses except for their visual observation, while other high-field domains with their current fluctuations or oscillations are easily observed and are the subjects of thousands of publications and many books. In this review we will exclude detailed discussion of dynamic domains, but include some new specifics that help to understand the mechanisms of the Boeer domains and their applications. Only properties at low optical excitation intensities are discussed that exclude Joules heating. Within the p-type regime of the anode-adjacent domain extremely steep electronic quenching signal becomes visible that could signalize an intrinsic donor level slightly above the middle of the band gap that may be responsible for not allowing CdS to ever become p-type by doping. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Eco-friendly intracellular biosynthesis of CdS quantum dots without changing Escherichia coli's antibiotic resistance.

Science.gov (United States)

Yan, Zheng-Yu; Du, Qing-Qing; Qian, Jing; Wan, Dong-Yu; Wu, Sheng-Mei

2017-01-01

In the paper, a green and efficient biosynthetical technique was reported for preparing cadmium sulfide (CdS) quantum dots, in which Escherichia coli (E. coli) was chosen as a biomatrix. Fluorescence emission spectra and fluorescent microscopic photographs revealed that as-produced CdS quantum dots had an optimum fluorescence emission peak located at 470nm and emitted a blue-green fluorescence under ultraviolet excitation. After extracted from bacterial cells and located the nanocrystals' foci in vivo, the CdS quantum dots showed a uniform size distribution by transmission electron microscope. Through the systematical investigation of the biosynthetic conditions, including culture medium replacement, input time point of cadmium source, working concentrations of raw inorganic ions, and co-cultured time spans of bacteria and metal ions in the bio-manufacture, the results revealed that CdS quantum dots with the strongest fluorescence emission were successfully prepared when E. coli cells were in stationary phase, with the replacement of culture medium and following the incubation with 1.0×10 -3 mol/L cadmium source for 2 days. Results of antimicrobial susceptibility testing indicated that the sensitivities to eight types of antibiotics of E. coli were barely changed before and after CdS quantum dots were prepared in the mild temperature environment, though a slight fall of antibiotic resistance could be observed, suggesting hinted the proposed technique of producing quantum dots is a promising environmentally low-risk protocol. Copyright © 2016 Elsevier Inc. All rights reserved.

Surface Passivation for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Deligiannis, D.

2017-01-01

Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

Assessment of the dye-sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

McConnell, R. D. [Center for Basic Sciences, National Renewable Energy Laboratory, MIS 3211, 1617 Cole Boulevard, Golden, CO 80401 (United States)

2002-09-01

The field of solar electricity, or photovoltaics (PV), is rich in that there are many materials and concepts for converting sunlight into electricity. The technologies accepted as conventional are those well along in the process of commercialization. The dye-sensitized solar cell, developed in the 1990s, is a nonconventional solar electric technology that has attracted much attention, perhaps a result of its record cell efficiency above 10%. This paper reviews the technology, discusses new research results and approaches presented at a recent symposium of many of the world's important dye solar cell researchers, and presents an assessment of the dye-sensitized solar cell in a comparison with current conventional solar electric technologies. It concludes the dye solar cell has potential for becoming a cost-effective means for producing electricity, capable of competing with available solar electric technologies and, eventually, with today's conventional power technologies. But it is a relatively new technology and faces many hurdles on the path to commercialization. Because of its potential, this assessment recommends further funding for research and development (RandD) of the dye-sensitized solar cell technology on the basis of the promising technical characteristics of the technology, a strong US and worldwide research base, positive industry interest, and today's relatively small funding allocation for its RandD. (Author)

Highly efficient light management for perovskite solar cells.

Science.gov (United States)

Wang, Dong-Lin; Cui, Hui-Juan; Hou, Guo-Jiao; Zhu, Zhen-Gang; Yan, Qing-Bo; Su, Gang

2016-01-06

Organic-inorganic halide perovskite solar cells have enormous potential to impact the existing photovoltaic industry. As realizing a higher conversion efficiency of the solar cell is still the most crucial task, a great number of schemes were proposed to minimize the carrier loss by optimizing the electrical properties of the perovskite solar cells. Here, we focus on another significant aspect that is to minimize the light loss by optimizing the light management to gain a high efficiency for perovskite solar cells. In our scheme, the slotted and inverted prism structured SiO2 layers are adopted to trap more light into the solar cells, and a better transparent conducting oxide layer is employed to reduce the parasitic absorption. For such an implementation, the efficiency and the serviceable angle of the perovskite solar cell can be promoted impressively. This proposal would shed new light on developing the high-performance perovskite solar cells.

Simple and green synthesis of protein-conjugated CdS nanoparticles and spectroscopic study on the interaction between CdS and zein

Energy Technology Data Exchange (ETDEWEB)

Qin, Dezhi, E-mail: dezhiqin@163.com; Zhang, Li; Du, Xian; Wang, Yabo; Zhang, Qiuxia [Pingdingshan University, College of Chemistry and Environmental Engineering (China)

2016-09-15

The present study demonstrates the role of zein molecules in synthesizing CdS nanoassemblies through protein-directed, green synthetic approach. Zein molecules can as capping ligand and stabilizing agent to regulate the nucleation and growth of CdS nanocrystals, and the obtained products are organic–inorganic nanocomposites. The analysis of surface charge and conductivity indicates that strong electrostatic force restricts mobility of ions, which creates a local supersaturation surrounding the binding sites of zein and reduces the activated energy of nucleation. The interaction between Cd{sup 2+}/CdS and zein molecules was systematically investigated through spectroscopy techniques. Fourier transform infrared (FT-IR) spectra were used to envisage the binding of the functional groups of zein with the surface of CdS nanoparticles. Ultraviolet visible (UV–Vis) and photoluminescence (PL) spectra results show that Cd{sup 2+}/CdS might interact with the aromatic amino acids of protein molecules and change its chemical microenvironment. The quantum-confined effect of nanocrystals is confirmed by optical absorption spectrum due to the small size (3–5 nm) of CdS particles. The data of circular dichroism (CD) spectra indicate that the formation of CdS nanocrystals could lead to the conformational change of zein molecules. Moreover, the possible mechanism of CdS nanocrystals growth in zein solution was also discussed. The weak interactions such as Van der Waals, hydrophobic forces and hydrogen bonds in zein molecules should play a crucial factor in the self-assembly of small nanoparticles.

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

Science.gov (United States)

Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

2014-03-10

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

Enhancing Solar Cell Efficiency Using Photon Upconversion Materials.

Science.gov (United States)

Shang, Yunfei; Hao, Shuwei; Yang, Chunhui; Chen, Guanying

2015-10-27

Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous), gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed.

Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

Directory of Open Access Journals (Sweden)

Yunfei Shang

2015-10-01

Full Text Available Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous, gallium arsenide (GaAs solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed

Polycrystalline Thin-Film Cadmium Telluride Solar Cells Fabricated by Electrodeposition; Final Technical Report, 20 March 1995-15 June 1998

Energy Technology Data Exchange (ETDEWEB)

Trefny, J. U.; Mao, D.; Kaydanov, V.; Ohno, T. R.; Williamson, D. L.; Collins, R.; Furtak, T. E.

1999-01-27

This report summarizes work performed by the Colorado School of Mines Department of Physics under this subcontract. Based on the studies conducted, researchers increased the efficiency of the cells with electrodeposited CdTe and CBD CdS by 3% on average ({approx}30 relative %). The improvement came from 1. Optimization of CdS initial thickness taking into account CdS consumption of CdTe during the CdTe/CdS post-deposition treatment; optimization of CdS post-deposition treatment with CdCl2 aimed at prevention of Te diffusion into CdS and improvement of the CdS film morphology and electronic properties. That led to a considerable increase in short circuit current, by 13% on average. 2. Optimization of CdTe thickness and post-deposition treatment which led to a significant increase in Voc, by {approx}70 mV. The highest Voc obtained exceeded 800 mV. 3. Development of a ZnTe:Cu/Metal back contact processing procedure that included selection of optimal Cu content, deposition regime and post-deposition treatment conditions. As a result, back contact resistance as low as 0.1W-cm2 was obtained. The cell stability was measured on exposure to accelerated stress conditions. Preliminary studies of some new approaches to improvement of CdS/CdTe structure were conducted.

Nanoparticle Solar Cell Final Technical Report

Energy Technology Data Exchange (ETDEWEB)

Breeze, Alison, J; Sahoo, Yudhisthira; Reddy, Damoder; Sholin, Veronica; Carter, Sue

2008-06-17

The purpose of this work was to demonstrate all-inorganic nanoparticle-based solar cells with photovoltaic performance extending into the near-IR region of the solar spectrum as a pathway towards improving power conversion efficiencies. The field of all-inorganic nanoparticle-based solar cells is very new, with only one literature publication in the prior to our project. Very little is understood regarding how these devices function. Inorganic solar cells with IR performance have previously been fabricated using traditional methods such as physical vapor deposition and sputtering, and solution-processed devices utilizing IR-absorbing organic polymers have been investigated. The solution-based deposition of nanoparticles offers the potential of a low-cost manufacturing process combined with the ability to tune the chemical synthesis and material properties to control the device properties. This work, in collaboration with the Sue Carter research group at the University of California, Santa Cruz, has greatly expanded the knowledge base in this field, exploring multiple material systems and several key areas of device physics including temperature, bandgap and electrode device behavior dependence, material morphological behavior, and the role of buffer layers. One publication has been accepted to Solar Energy Materials and Solar Cells pending minor revision and another two papers are being written now. While device performance in the near-IR did not reach the level anticipated at the beginning of this grant, we did observe one of the highest near-IR efficiencies for a nanoparticle-based solar cell device to date. We also identified several key parameters of importance for improving both near-IR performance and nanoparticle solar cells in general, and demonstrated multiple pathways which showed promise for future commercialization with further research.

Polymer tandem solar cells

NARCIS (Netherlands)

Gilot, J.

2010-01-01

Solar cells convert solar energy directly into electricity and are attractive contribute to the increasing energy demand of modern society. Commercial mono-crystalline silicon based devices are infiltrating the energy market but their expensive, time and energy consuming production process

ZnS-Passivated CdSe/CdS Co-sensitized Mesoporous Zn2SnO4 Based Solar Cells

International Nuclear Information System (INIS)

Kim, Kyungho; Park, Ji Eun; Park, Eun Su; Park, Yun Chang; Kim, Joosun; Im, Chan; Lee, Man-Jong

2014-01-01

Graphical abstract: - Highlights: • Mesoporous Zn 2 SnO 4 sensitized by CdSe/CdS QDs were synthesized via a two-step sequential process. • Assembled QDs were characterized by HRTEM and STEM mapping. • Efficiency increase in CdSe/CdS co-sensitized Zn 2 SnO 4 DSSCs is discussed. • The role of ZnS passivation layer is discussed by impedance spectroscopy. - Abstract: CdS and CdSe/CdS quantum dot (QD) sensitizers were assembled onto mesoporous ternary Zn 2 SnO 4 photoanodes using a two-step sequential process of successive ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD) for QD-cosensitized solar cell applications. The assembled CdS and CdSe QDs were observed using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), high-resolution TEM (HRTEM), and STEM/energy-dispersive X-ray spectroscopy (EDS) elemental mapping. CdSe/CdS cosensitized Zn 2 SnO 4 -based cells showed a higher absorption onset position, a stepwise band-edge level alignment, and, thereby, an improved power conversion efficiency (PCE) of 1.628% under one-sun conditions, which is the best result obtained using mesoporous Zn 2 SnO 4 reported to date. In addition, the effect of a ZnS passivation layer on the photovoltaic performance and aging behavior has been investigated. Electrochemical impedance spectroscopy (EIS) showed that the main role of the ZnS layer is to enhance the aging behavior of the CdSe/CdS/Zn 2 SnO 4 cells by improving the electron lifetime and charge recombination

What do we know about speculation in the CDS market?

NARCIS (Netherlands)

L. Norden (Lars); K. Radoeva (Kristina)

2012-01-01

textabstractWe measure speculation in the CDS market and investigate its determinants. The CDS volume on a firm that exceeds its outstanding debt (= naked CDS) indicates speculation since hedging can be ruled out. Using weekly CDS trading volume data for actively traded U.S. firms during 2008-2012,

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

A configurable CDS for the production laboratory

CERN Document Server

Meek, Irish

2003-01-01

Various aspects of a configurable chromatography data system (CDS) for the production laboratory are discussed. The Atlas CDS can be configured extensively to fit the production laboratory work flow and meet the needs of analysts. The CDS can also be configured to automatically create a sample sequence with the required number of injections and download methods to the dedicated instrument. The Atlas Quick Start wizard offers uses quick way of generating a sequence from a predefined template and starting a run. (Edited abstract).

Concentrator-solar-cell development

Science.gov (United States)

Grenon, L.

1982-07-01

A program is described which is a continuation of earlier programs for the development of high-efficiency, low-cost, silicon concentrator solar cells. The base-line process steps and process sequences identified in these earlier contracts were evaluated and specific processes reviewed. In particular, emphasis on the use of Czochralski-grown silicon wafers rather than float-zone wafers were examined. Additionally, a study of the trade-offs between textured and nontextured cells was initiated, and the limits within which the low-cost plated nickel copper metallization can be used in concentrator solar cell applications was identified.

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

Solar Cell Production in Nigeria: Prospects, Options and Problems

International Nuclear Information System (INIS)

Fasasi, A. Y.; Siyanbola, W.O.; Ibitoye, F. I.; Pelemo, D. A.

2002-01-01

The prospects and problems facing solar cell production in Nigeria are discussed. The paper reviews many proven solar cell materials in terms of their current efficiencies and production costs. Silicon solar cell production appears to be the best technology option for Nigeria because of the abundant quartz sand and waste products from our phosphate fertiliser company that can be employed as starting materials to produce solar grade silicon. Factors affecting solar cell efficiency, choice of solar cell as well as financial and material problems limiting the progress on silicon solar cell production are also discussed. Finally, the paper recommends the simultaneous production of solar grade silicon and coordinated development of the balance of system components as first steps towards actualizing this objective

Single-Walled Carbon Nanotubes in Solar Cells.

Science.gov (United States)

Jeon, Il; Matsuo, Yutaka; Maruyama, Shigeo

2018-01-22

Photovoltaics, more generally known as solar cells, are made from semiconducting materials that convert light into electricity. Solar cells have received much attention in recent years due to their promise as clean and efficient light-harvesting devices. Single-walled carbon nanotubes (SWNTs) could play a crucial role in these devices and have been the subject of much research, which continues to this day. SWNTs are known to outperform multi-walled carbon nanotubes (MWNTs) at low densities, because of the difference in their optical transmittance for the same current density, which is the most important parameter in comparing SWNTs and MWNTs. SWNT films show semiconducting features, which make SWNTs function as active or charge-transporting materials. This chapter, consisting of two sections, focuses on the use of SWNTs in solar cells. In the first section, we discuss SWNTs as a light harvester and charge transporter in the photoactive layer, which are reviewed chronologically to show the history of the research progress. In the second section, we discuss SWNTs as a transparent conductive layer outside of the photoactive layer, which is relatively more actively researched. This section introduces SWNT applications in silicon solar cells, organic solar cells, and perovskite solar cells each, from their prototypes to recent results. As we go along, the science and prospects of the application of solar cells will be discussed.

Scaling Up ITO-free solar cells

DEFF Research Database (Denmark)

Galagan, Yulia; Coenen, Erica W. C.; Zimmermann, Birger

2014-01-01

Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm...... resistances. The performance of ITO-free organic solar cells with different dimensions and different electrode resistances are evaluated for different light intensities. The current generation and electric potential distribution are found to not be uniformly distributed in large-area devices at simulated 1...

Solvothermally synthesized europium-doped CdS nanorods: applications as phosphors

International Nuclear Information System (INIS)

Kumar, Sunil; Jindal, Zinki; Kumari, Nitu; Verma, Narendra Kumar

2011-01-01

To exploit the photoluminescent behavior of CdS at nanoscale with different doping concentration of europium—a rare earth element, we report the synthesis of Eu-doped CdS nanorods by using low temperature solvothermal process by using ethylenediamine. The outcomes can have future applications as phosphors, photovoltaic cells, lasers, light emitting diodes, bio-imaging, and sensors. The doping was confirmed by electron dispersive spectroscopy supported by X-ray diffraction. From scanning electron microscopy and transmission electron microscopy analysis it was observed that the average diameter of the Cd 1−x Eu x S nanorods is about 10–12 nm having lengths in the range of 50–100 nm. UV–Visible spectroscopy study was carried out to determine the band gap of the nanorods and the absorbance peaks showed blue shift with respect to the bulk CdS. The blue shift was also observed as the doping concentration of Eu increases. From photoluminescence (PL) studies at λ ex = 450 nm, peaks at 528 and 540 nm were observed due to CdS, peak at 570 nm is due to defects related transitions, while the peak at 613 nm is due to Eu. As the doping concentration of Eu is increased the intensity of the luminescent peak at 613 nm is increased. Thermogravimetric analysis showed the nanorods are thermally stable up to 300 °C. The traces of impurities adsorbed on the nanorods were confirmed by Fourier transform infrared spectroscopy.

Novel concepts in electrochemical solar cells. Second quarterly progress report, August 15, 1979-October 15, 1979. [Molten salt electrolytes

Energy Technology Data Exchange (ETDEWEB)

DuBow, J.; Job, R.; Krishnan, R.; Gale, B.

1979-01-01

It is considered that the short term stability of n-GaAs PEC's in a ferrocene-based, ambient temperature molten salt electrolyte is reasonably good. However, longer term evaluation is required to determine the extent and significance of corrosion, stability, etc. Extremely few fundamental studies have been made of the semiconductor/molten salt interphase and experiments in this area would be most useful. Indeed, even the design parameters for PECs of any kind have not been quantitatively delineated and present consideration will be given to models for PEC solar cells and limitations caused by ion transport in the electrolyte. The MoSe/sub 2/ and MoS/sub 2/ electrodes appear to have substrate reproducibility and transport limitations that make them unsuitable candidates for efficient PEC's at this time. Similarly, the lack of availability of high quality CuInSe/sub 2/ and CuInS/sub 2/ substrates limits the quantitative experimental evaluation of their utility for PEC applications. We are presently focusing attention on CdSe/CdTe mixtures and CdS as electrodes as well as Si and GaAs in molten salt and polyelectrolyte solutions. The system for solar cell evaluation and network analysis of substrates and cells was mode operational. Preliminary work on economic and theoretical modelling was begun. Progress is reported. (WHK)

Biosynthesis of CdS nanoparticles in banana peel extract.

Science.gov (United States)

Zhou, Guang Ju; Li, Shuo Hao; Zhang, Yu Cang; Fu, Yun Zhi

2014-06-01

Cadmium sulfide (CdS) nanoparticles (NPs) were synthesized by using banana peel extract as a convenient, non-toxic, eco-friendly 'green' capping agent. Cadmium nitrate and sodium sulfide are main reagents. A variety of CdS NPs are prepared through changing reaction conditions (banana extracts, the amount of banana peel extract, solution pH, concentration and reactive temperature). The prepared CdS colloid displays strong fluorescence spectrum. X-ray diffraction analysis demonstrates the successful formation of CdS NPs. Fourier transform infra-red (FTIR) spectrogram indicates the involvement of carboxyl, amine and hydroxyl groups in the formation of CdS NPs. Transmission electron microscope (TEM) result reveals that the average size of the NPs is around 1.48 nm.

Study of surfaces and interfaces in CdS-Cu2S and (Cd sub(x) Zn sub(1-x))S-Cu2S solar cells

International Nuclear Information System (INIS)

Dhere, N.G.; Dhere, R.G.; Bloss, W.H.; Schock, H.W.; Bauer, E.; Cyris, P.

1983-01-01

Auger microprobe was used for the analysis of interfaces and surfaces in several stages involved in the preparation of solar cells, in order to study the origin of adhesion problems and to study the formation of CdS-Cu 2 S barrier by the wet method. The detachment of the first CdS and (Cd sub(x) Zn sub(1-x))S films, during the dip process, was attributed to the contamination of Cr-Ag metallic substrates by existing chlorine from the environment next to the sea, due to long film stocking, by degasified species from the evaporating material and by the ejection of particles together with CdS vapour during deposition. The formation of conical mounds on the surface and of the CdS-Cu 2 S barrier at aproximatelly 3000 A depth in the dipped samples were observed. The migration of copper towards surface direction and the formation of a superficial thin layer of copper oxide after treatment in H 2 plasma and air heating, were also verified. (C.L.B.) [pt

High-efficiency concentrator silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Solar Cell and Array Technology Development for NASA Solar Electric Propulsion Missions

Science.gov (United States)

Piszczor, Michael; McNatt, Jeremiah; Mercer, Carolyn; Kerslake, Tom; Pappa, Richard

2012-01-01

NASA is currently developing advanced solar cell and solar array technologies to support future exploration activities. These advanced photovoltaic technology development efforts are needed to enable very large (multi-hundred kilowatt) power systems that must be compatible with solar electric propulsion (SEP) missions. The technology being developed must address a wide variety of requirements and cover the necessary advances in solar cell, blanket integration, and large solar array structures that are needed for this class of missions. Th is paper will summarize NASA's plans for high power SEP missions, initi al mission studies and power system requirements, plans for advanced photovoltaic technology development, and the status of specific cell and array technology development and testing that have already been conducted.

Organic Based Solar Cells with Morphology Control

DEFF Research Database (Denmark)

Andersen, Thomas Rieks

The field of organic solar cells has in the last years gone through an impressive development with efficiencies reported up to 12 %. For organic solar cells to take the leap from primarily being a laboratory scale technology to being utilized as renewable energy source, several issues need...... Microscopy and as solar cells in a blend with PCBM. It was concluded that these particles did not show a potential large enough for continuous work due to a high material loss and low efficiency when applied in solar cells. The second method to achieve was preparation of pre-arranged morphology organic...... nanoparticles consisting of a blend of donor and acceptor in an aqueous dispersion, thereby addressing two of the issues remaining in the field of organic solar cells. This approach was used on six different polymers, which all had the ability to prepare aqueous nanoparticle inks. The morphology...

Solar Cell Panel and the Method for Manufacturing the Same

Science.gov (United States)

Richards, Benjamin C. (Inventor); Sarver, Charles F. (Inventor); Naidenkova, Maria (Inventor)

2016-01-01

According to an aspect of an embodiment of the present disclosure, there is provided a solar cell panel and a method for manufacturing the same. The solar cell panel comprises: a solar cell for generating electric power from sunlight; a coverglass for covering the solar cell; transparent shims, which are disposed between the solar cell and the coverglass at the points where the distance between the solar cell and the coverglass needs to be controlled, and form a space between the solar cell and the coverglass; and adhesive layer, which fills the space between the solar cell and the coverglass and has the thickness the same as that of the transparent shims.

Perovskite Solar Cell

Indian Academy of Sciences (India)

Organic–inorganic halide perovskite, a newcomerin the solar cell industry has proved its potential forincreasing efficiency rapidly from 3.8% in 2009 to 22.1% in2016. High efficiency, flexibility, and cell architecture of theemerging hybrid halide perovskite have caught the attentionof researchers and technologists in the field.

Unconventional device concepts for polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Veenstra, S.C.; Slooff, L.H.; Verhees, W.J.H.; Cobussen-Pool, E.M.; Lenzmann, F.O.; Kroon, J.M. [ECN Solar Energy, Petten (Netherlands); Sessolo, M.; Bolink, H.J. [Instituto de Ciencia Molecular, Universidad de Valencia, Valencia (Spain)

2009-09-15

The inclusion of metal-oxide layers in polymer solar cells enables the fabrication of a series of unconventional device architectures. These devices include: semi-transparent polymer solar cells, devices with inverted polarity, as well as devices with air stable electrodes. A proof-of-principle of these devices is presented. The anticipated benefits of these novel device structures over conventional polymer solar cells are discussed.

Silicon solar cells: Past, present and the future

Science.gov (United States)

Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

2014-08-01

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Silicon solar cells: past, present and the future

Energy Technology Data Exchange (ETDEWEB)

Lee, Y. J.; Kim, B. S.; Ifitiquar, S. M.; Park, C. M.; Yi, J. S. [Sungkyunkwan University, Suwon (Korea, Republic of)

2014-08-15

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an over supply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL - structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon - based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon - based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Neutral- and Multi-Colored Semitransparent Perovskite Solar Cells.

Science.gov (United States)

Lee, Kyu-Tae; Guo, L Jay; Park, Hui Joon

2016-04-11

In this review, we summarize recent works on perovskite solar cells with neutral- and multi-colored semitransparency for building-integrated photovoltaics and tandem solar cells. The perovskite solar cells exploiting microstructured arrays of perovskite "islands" and transparent electrodes-the latter of which include thin metallic films, metal nanowires, carbon nanotubes, graphenes, and transparent conductive oxides for achieving optical transparency-are investigated. Moreover, the perovskite solar cells with distinctive color generation, which are enabled by engineering the band gap of the perovskite light-harvesting semiconductors with chemical management and integrating with photonic nanostructures, including microcavity, are discussed. We conclude by providing future research directions toward further performance improvements of the semitransparent perovskite solar cells.

Technical training: CERN Document Server (CDS), Inspire and Library Services

CERN Multimedia

IT & GS Departments

2012-01-01

A new training course, “CERN Document Server (CDS), Inspire and Library Services”, is available since the beginning of the year. The training course is given by members of CERN’s CDS Team (IT-CIS group) and the Library Services (GIS SIS group) and is intended for all members of personnel of CERN. This course will present CDS and inspirehep.net and the content, scope and scientific information available in or with CDS, as much as the classification and organization of the documents. It is intended to give you the training needed to know how to use CDS most efficiently and in particular covers: the main characteristics and advanced features for the search of documents (scientific, multimedia, etc). the collaborative tools : baskets, alerts, comments, evaluation, etc. the submission of documents in CDS and examples of workflows. An important part of the training is composed of various exercises, designed to acquire practical ability to work with CDS in cases similar to re...

A cost roadmap for silicon heterojunction solar cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.; Schropp, R.E.I.; Faaij, A.

2016-01-01

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

A Cost Roadmap for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

Solar cell radiation handbook. Addendum 1: 1982-1988

International Nuclear Information System (INIS)

Anspaugh, B.E.

1989-02-01

The Solar Cell Radiation Handbook (JPL Publication 82-69) is updated. In order to maintain currency of solar cell radiation data, recent solar cell designs have been acquired, irradiated with 1 MeV electrons, and measured. The results of these radiation experiments are reported

Synthesis of CdS nanoparticles based on DNA network templates

International Nuclear Information System (INIS)

Yao Yong; Song Yonghai; Wang Li

2008-01-01

CdS nanoparticles have been successfully synthesized by using DNA networks as templates. The synthesis was carried out by first dropping a mixture of cadmium acetate and DNA on a mica surface for the formation of the DNA network template and then transferring the sample into a heated thiourea solution. The Cd 2+ reacted with thiourea at high temperature and formed CdS nanoparticles on the DNA network template. UV-vis spectroscopy, photoluminescence, x-ray diffraction and atomic force microscopy (AFM) were used to characterize the CdS nanoparticles in detail. AFM results showed that the resulted CdS nanoparticles were directly aligned on the DNA network templates and that the synthesis and assembly of CdS nanoparticles was realized in one step. CdS nanoparticles fabricated with this method were smaller than those directly synthesized in a thiourea solution and were uniformly aligned on the DNA networks. By adjusting the density of the DNA networks and the concentration of Cd 2+ , the size and density of the CdS nanoparticles could be effectively controlled and CdS nanoparticles could grow along the DNA chains into nanowires. The possible growth mechanism has also been discussed in detail

Improving the Formatting Tools of CDS Invenio

CERN Document Server

Caffaro, J; Pu Faltings, Pearl

2006-01-01

CDS Invenio is the web-based integrated digital library system developed at CERN. It is a strategical tool that supports the archival and open dissemination of documents produced by CERN researchers. This paper reports on my Master’s thesis work done on BibFormat, a module in CDS Invenio, which formats documents metadata. The goal of this project was to implement a completely new formatting module for CDS Invenio. In this report a strong emphasis is put on the user-centered design of the new BibFormat. The bibliographic formatting process and its requirements are discussed. The task analysis and its resulting interaction model are detailed. The document also shows the implemented user interface of BibFormat and gives the results of the user evaluation of this interface. Finally the results of a small usability study of the formats included in CDS Invenio are discussed.

Solar cell power source system

Energy Technology Data Exchange (ETDEWEB)

Shimizu, Yoichi; Toma, Kunio; Fukuwa, Shinji

1988-05-14

This invention aims to supply a power source system with stable power output by reducing the power loss due to switching in the voltage stabilization even when the power source is a solar cell with frequent voltage variation. For this purpose, in a solar cell power source system consisting of a solar cell, a storage battery, a switching regulator placed between the storage cell and the load, and a load, arrangement was made that, by judging the input voltage from the storage battery, switch-acting the transistor of the switching regulator, if the input voltage is higher than the specified voltage; is the input voltage is lower than the specified voltage, the transistor is put in a full-on state. By this, the supply voltage can be stabilized even when the voltage fluctuates, and system gets more efficient as the switching loss decreases in the voltage stabilizing means. (1 fig)

Back contact buffer layer for thin-film solar cells

Science.gov (United States)

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Silicon Solar Cell Turns 50

Energy Technology Data Exchange (ETDEWEB)

Perlin, J.

2004-08-01

This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

Scaling up ITO-Free solar cells

NARCIS (Netherlands)

Galagan, Y.O.; Coenen, E.W.C.; Zimmermann, B.; Slooff, L.H.; Verhees, W.J.H.; Veenstra, S.C.; Kroon, J.M.; Jørgensen, M.; Krebs, F.C.; Andriessen, H.A.J.M.

2014-01-01

Indium-tin-oxide-free (ITO-free) polymer solar cells with composite electrodes containing current-collecting grids and a semitransparent poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) (PEDOT:PSS) conductor are demonstrated. The up-scaling of the length of the solar cell from 1 to 6 cm and

Dye-sensitised solar cell (artificial photosynthesis)

CSIR Research Space (South Africa)

Le Roux, Lukas J

2005-07-01

Full Text Available A novel system that harnesses solar energy is the nano-crystalline TiO dye-sensitised solar cell (DSC), in conjunction with several new concepts, such as nanotechnology and molecular devices. An efficient and low-cost cell can be produced by using...

Doctor Blade-Coated Polymer Solar Cells

KAUST Repository

Cho, Nam Chul

2016-10-25

In this work, we report polymer solar cells based on blade-coated P3HT:PC71BM and PBDTTT-EFT:PC71BM bulk heterojunction photoactive layers. Enhanced power conversion efficiency of 2.75 (conventional structure) and 3.03% (inverted structure) with improved reproducibility was obtained from blade-coated P3HT:PC71BM solar cells, compared to spin-coated ones. Furthermore, by demonstrating 3.10% efficiency flexible solar cells using blade-coated PBDTTT-EFT:PC71BM films on the plastic substrates, we suggest the potential applicability of blade coating technique to the high throughput roll-to-roll fabrication systems.

Workshop - Solar cells and daylight. Solar cell house. House building with integrated solar cell systems; Workshop - Solceller og dagslys. Solcellehus. Boligbyggeri med integrerede solcelleanlaeg

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Mio; Hansen, Ellen Kathrine

2005-04-15

The workshop 'Solar cells and daylight' at Aarhus School of Architecture aimed at studying and developing architectural potentials of integrating solar cell systems in building components for future house building. The aim of the process was to stress that technical conditions such as energy technological component design might work as central points of support in the future shaping and organisation of qualitative and functional design of houses. (BA)

Light-trapping in perovskite solar cells

Directory of Open Access Journals (Sweden)

Qing Guo Du

2016-06-01

Full Text Available We numerically demonstrate enhanced light harvesting efficiency in both CH3NH3PbI3 and CH(NH22PbI3-based perovskite solar cells using inverted vertical-cone photonic-crystal nanostructures. For CH3NH3PbI3 perovskite solar cells, the maximum achievable photocurrent density (MAPD reaches 25.1 mA/cm2, corresponding to 92% of the total available photocurrent in the absorption range of 300 nm to 800 nm. Our cell shows 6% absorption enhancement compared to the Lambertian limit (23.7 mA/cm2 and has a projected power conversion efficiency of 12.9%. Excellent solar absorption is numerically demonstrated over a broad angular range from 0 to 60 degree for both S- and P- polarizations. For the corresponding CH(NH22PbI3 based perovskite solar cell, with absorption range of 300 nm to 850 nm, we find a MAPD of 29.1 mA/cm2, corresponding to 95.4% of the total available photocurrent. The projected power conversion efficiency of the CH(NH22PbI3 based photonic crystal solar cell is 23.4%, well above the current world record efficiency of 20.1%.

Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (research and development of composite materials on solar cells under microgravity environment); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (bisho juryoku kankyo wo riyoshita taiyo denchiyo zairyo kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on development of composite materials for solar cells under microgravity environment in fiscal 1994. (1) On a thin film capillary method, 26 experiments of GaSb thin film crystal growth were conducted using the especially prepared high-accuracy electric furnace under microgravity. The wettability of thin film crystals was improved by refining equipment. Rhombus crystal planes and large crystal grains were observed in GaSb thin film crystals prepared under microgravity. (2) On a liquid phase method, the effect of the gravity on crystal structure and grain morphology was studied for synthesis of CdS fine grains. (3) On technological development of composite materials, the solidification experiment of Cu-In-Se melt was conducted under short time microgravity of 10{sup -4}g for 10 sec. As a result, more uniform texture and more high crystallinity were obtained under microgravity, and In in melt was concentrated by surface tension effect. It was suggested that high-quality CIS thin films will be obtained by Se doping into Cu-In composite films under microgravity environment.

Recent progress in Si thin film technology for solar cells

Science.gov (United States)

Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

1991-11-01

Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.