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Sample records for cdo thin films

  1. Structural, morphological, optical and electrical properties of spray deposited lithium doped CdO thin films

    Science.gov (United States)

    Velusamy, P.; Babu, R. Ramesh; Ramamurthi, K.

    2016-05-01

    In the present work, CdO and Li doped CdO thin films were deposited on microscopic glass substrates at 300˚C by a spray pyrolysis experimental setup. The deposited CdO and Li doped CdO thin films were subjected to XRD, SEM, UV-VIS spectroscopy and Hall measurement analyses. XRD studies revealed the polycrystalline nature of the deposited films and confirmed that the deposited CdO and Li doped CdO thin films belong to cubic crystal system. The Scanning electron microscopy analysis revealed the information on shape of CdO and Li doped CdO films. Electrical study reveals the n-type semiconducting nature of CdO and the optical band gap is varied between 2.38 and 2.44 eV, depending on the Li doping concentrations.

  2. Characterisation of CdO thin films deposited by activated reactive evaporation

    Science.gov (United States)

    Ramakrishna Reddy, K. T.; Sravani, C.; Miles, R. W.

    1998-02-01

    The paper describes the preparation of cadmium oxide thin films produced by "activated reactive evaporation" onto heated glass substrates. The structural, electrical and optical properties of the deposited films were investigated and the effect of substrate temperature on the different physical properties of the films investigated. Highly conducting, polycrystalline CdO films with good transmittances were prepared by controlling the deposition temperature. These layers can be used to produce CdO/CdTe solar cells with efficiencies > 7%.

  3. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  4. A Study of Structural and Photoluminescence for Al-Doped CdO Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2016-01-01

    Full Text Available Al-doped CdO thin films were prepared by radio frequency magnetron sputtering at different deposition time and substrate temperature. X-ray diffraction showed that the changes in the intensities of the (200, (220, and (311 planes followed a similar trend with increase in deposition time. The surface of the thin film was examined by scanning electron microscopy. Grain sizes of Al-doped CdO thin films increased significantly with increasing deposition time. The film thicknesses were 0.09, 0.12, 0.20, and 0.225 μm for the deposition times of 1, 2, 3, and 4 h, respectively. The photoluminescence spectra of the Al-doped CdO thin films were measured at room temperature. The photoluminescence wavelength changed in the sequence, green, blue, green, and blue, with increasing deposition time, which indicates that blue light emitting films can be fabricated by adjusting the processing parameters.

  5. Influence of precursor concentration on the properties of spray deposited CdO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Helen, S. J. [Department of Physics, Karunya University, Coimbatore-641114 (India); Devadason, Suganthi, E-mail: dsuganthi2002@gmail.com; Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of)

    2015-06-24

    Cadmium oxide (CdO) thin films of thickness 50 to 200 nm were deposited on glass substrates maintained at 400°C using spray pyrolysis technique. CdO thin films were deposited by varying the molar concentrations of cadmium acetate solution such as 0.01, 0.05, 0.1, 0.15 and 0.2 M. X-ray diffraction studies reveal that the films are polycrystalline in nature with cubic structure. SEM images show that the films have well defined spherical grains and grain boundaries are seen. Optical studies reveal that the films prepared from solution of 0.01 and 0.1M concentration have high transparency than films prepared at other solution concentration. The optical energy band gap value decreases from 2.50 to 2.37eV with the increase in molar concentration. Electrical studies revealed that the CdO thin film prepared using 0.1M solution possesses lowest resistivity.

  6. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-08-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage (I-V) characteristics of the CdO/p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances (R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  7. Investigation of chemical bath deposition of CdO thin films using three different complexing agents

    Energy Technology Data Exchange (ETDEWEB)

    Khallaf, Hani [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Chen, Chia-Ta; Chang, Liann-Be [Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan (China); Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan (China); Lupan, Oleg [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Boulevard, MD-2004 Chisinau, Republic of Moldova (Moldova, Republic of); Dutta, Aniruddha; Heinrich, Helge [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States); Shenouda, A. [Central Metallurgical R and D Institute (CMRDI), Tebbin, P.O. Box 87, Helwan (Egypt); Chow, Lee, E-mail: Lee.Chow@ucf.edu [Department of Physics, University of Central Florida, Orlando, FL 32816 (United States); Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States)

    2011-09-01

    Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO{sub 4} is used as Cd precursor, while H{sub 2}O{sub 2} is used as an oxidation agent. As-grown films are mainly cubic CdO{sub 2}, with some Cd(OH){sub 2} as well as CdO phases being detected. Annealing at 400 deg. C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 {+-} 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 x 10{sup 20} cm{sup -3} and a resistivity as low as 1.04 x 10{sup -2} {Omega}-cm are obtained.

  8. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    Science.gov (United States)

    Kumar, G. Anil; Reddy, M. V. Ramana; Reddy, Katta Narasimha

    2014-04-01

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10-2 mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  9. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, G. Anil, E-mail: anilhcu@gmail.com; Reddy, M. V. Ramana, E-mail: anilhcu@gmail.com [Department of Physics, Osmania University, Hyderabad-500007 (India); Reddy, Katta Narasimha, E-mail: anilhcu@gmail.com [Department of Physics, Mahatma Gandhi University, Nalgonda-508003 (India)

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  10. Temperature dependent grain-size and microstrain of CdO thin films prepared by spray pyrolysis method

    Indian Academy of Sciences (India)

    B G Jeyaprakash; K Kesavan; R Ashok Kumar; S Mohan; A Amalarani

    2011-07-01

    CdO thin films on glass substrate were prepared by home built spray pyrolysis unit from aqueous solution of Cd(CH3COO)2.2H2O at different substrate temperatures. X-ray diffraction (XRD) studies indicate the formation of polycrystalline cubic CdO phase with preferential orientation along (111) plane. X-ray line broadening technique is adopted to study the effect of substrate temperature on microstructural parameters such as grain size and microstrain. Scanning electron microscopy (SEM) shows that the film prepared at 250°C consists of spherical shape grains with size in nanometer range and is comparable with the XRD studies.

  11. Bandgap widening in highly conducting CdO thin film by Ti incorporation through radio frequency magnetron sputtering technique

    Science.gov (United States)

    Saha, B.; Thapa, R.; Chattopadhyay, K. K.

    2008-01-01

    Transparent and highly conducting thin films of cadmium oxide (CdO) with titanium doping were synthesized by using radio frequency magnetron sputtering technique. The thin films were deposited on glass and silicon substrates with different percentages of titanium at a fixed substrate temperature 473 K and a fixed pressure of 0.1 mbar in Ar atmosphere. The deposited films were characterized by studying their crystallographic structure, optical and electrical properties. X-ray diffractometer, atomic force microscope, UV-Vis-NIR spectrophotometer, and X-ray photoelectron spectrophotometer were used for different characterizations. All the films have a rock-salt structure. A systematic increase in the optical bandgap was found for the CdO thin films with Ti doping, so that it can be considered as a candidate material for different optoelectronic device applications. Electrical conductivity was also found to increase with Ti doping concentration.

  12. Weak localization in CdO thin films prepared by sol-gel method

    Science.gov (United States)

    Wang, W. J.; Xie, X. J.; Liu, J. Y.; Gao, K. H.

    2016-07-01

    This paper reports the study of the magnetotransport properties of polycrystalline CdO thin films prepared by the sol-gel method. Both the sheet resistance and electron density as a function of temperature indicate that our samples are degenerate semiconductors. The weak localization (WL) effect is observed in the low temperature range. Applying the two-dimensional WL theory, we have extracted the dephasing length and a relatively large value (the maximum gets to 151 nm at 2 K) is obtained. The temperature dependence of the extracted dephasing length can be well described by the electron-electron scattering process, indicating that the electron-electron scattering is main dephasing mechanism for electrons.

  13. Influence of Annealing on Physical Properties of CdO Thin Films Prepared by SILAR Method

    Institute of Scientific and Technical Information of China (English)

    B. Gokul; P. Matheswaran; R. Sathyamoorthy

    2013-01-01

    Cadmium oxide (CdO) thin films were prepared by successive ionic layer adsorption and reaction (SILAR) method and annealed at 250-450 ℃ for 2 h.The prepared films were characterized by X-ray diffraction (XRD),optical spectroscopy,scanning electron microscopy (SEM) and Hall effect measurement.The XRD analysis reveals that the films were polycrystalline with cubic structure.Both crystallinity and the grain size were found to increase with increasing annealing temperature.SEM analysis shows the porous nature of the surface with spherical nanoclusters.Energy dispersive spectroscopic analysis (EDS) confirmed the presence of Cd and O elements without any additional impurities.The films exhibited maximum transmittance (82%-86%) in infra-red (IR) region.Transmittance was found to decrease with increasing annealing temperature and the estimated band gap energy (Eg) was in the range of 2.24-2.44 eV.Hall effect measurement shows an increase in carrier concentration and a decrease in resistivity with increasing annealing temperature.The carrier concentration (N) and resistivity (ρ) of about 1.26 × 1022 cm 3 and 8.71 × 10 3 Ω cm are achieved for the film annealed at 450 ℃ for 2 h.

  14. Effect of thermal annealing on structural, optical and electrical properties of RF reactive magnetron sputtered CdO thin films

    Science.gov (United States)

    Kumar, Gadipelly Anil; Ramana Reddy, Musugu; Narasimha Reddy, Katta

    2014-10-01

    Recently, there has been a lot of interest on transparent conducting oxide (TCO) materials which have common application in solar cells and some optoelectronic devices. In this work, cadmium oxide (CdO) thin films have been deposited on glass substrates by RF reactive magnetron sputtering technique and subsequently annealed in air from 200 °C to 500 °C. The effect of annealing temperature on the structural, morphological, optical and electrical properties of CdO films is systematically investigated by X-ray diffraction, scanning electron microscopy with energy dispersive spectroscopy, atomic force microscopy, UV-visible spectrophotometer and Hall effect measurements. X-ray diffraction (XRD) studies showed that the films are polycrystalline in nature with a preferential orientation along (2 0 0) plane. Atomic force microscopy studies showed that these films are very smooth with maximum root mean square roughness of 3.13 nm. The CdO films formed at annealing temperature of 400 °C exhibited optical transmittance of 84%, electrical resistivity of 1.9 × 10-3 Ω cm and figure of merit of 1.8 × 10-3 Ω-1.

  15. Influence of Boron doping on the structural, optical and electrical properties of CdO thin films by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Velusamy, P., E-mail: rampap2k@yahoo.co.in; Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Films Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli- 620024, Tamil Nadu (India); Ramamurthi, K. [Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur - 603203, Tamil Nadu (India)

    2014-04-24

    Cadmium oxide and Boron (B) doped Cadmium oxide thin films were deposited using spray pyrolysis technique. The structural, morphological, electrical and optical properties of undoped and B doped CdO films are analyzed by varying the dopant concentration in the solution. The structural study shows the polycrystalline nature and cubic structure of undoped and B doped CdO thin films. Surface morphological study reveals that the grains are spherical in shape. Optical and electrical studies showed n-type semiconducting nature and optical band gap of 2.44 eV of deposited thin films.

  16. Dependence of Structural, Electrical, Optical and Surface Morphological Properties of Sol-Gel Spin Coated CdO Thin Films on The Process Temperature

    Directory of Open Access Journals (Sweden)

    R. Rajammal

    2011-01-01

    Full Text Available Transparent conducting Cadmium Oxide thin films have been prepared on glass substrates by the simple sol-gel spin coating technique. The structural, electrical, optical and surface morphological properties of the deposited films have been studied with a view to investigate the effect of process temperature on the different physical properties of the films. It has been found that the process temperature has a strong influence on the properties of the CdO films and highly conducting poly crystalline CdO films with good transmittances have been obtained by controlling the deposition temperature and the results have been reported.

  17. Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition

    International Nuclear Information System (INIS)

    Transparent indium-doped cadmium oxide (In-CdO) thin films were deposited on quartz glass substrates by pulse laser deposition (PLD) from ablating Cd-In metallic target at a fixed pressure 10 Pa and a fixed substrate temperature 300 deg. C. The influences of indium concentrations in target on the microstructure, optical and electrical performances were studied. When the indium concentration reaches to 3.9 wt%, the as-deposited In-CdO film shows high optical transmission in visible light region, obviously enhanced direct band gap energy (2.97 eV), higher carrier concentration and lower electric resistivity compared with the undoped CdO film, while a further increase of indium concentration to 5.6 wt% induces the formation of In2O3, which reverse the variation of these parameters and performance.

  18. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films-Doping concentration effect

    Institute of Scientific and Technical Information of China (English)

    K. Usharani; A.R. Balu; V.S. Nagarethinam; M. Suganya

    2015-01-01

    Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg) thin films have been deposited on suitably cleaned glass substrates maintained at 375 1C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at%in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1) plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at%Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at%Mg dopant had a minimum resistivity of 0.0853 ? 101Ω-cm.

  19. Investigation of Al doping concentration effect on the structural and optical properties of the nanostructured CdO thin film

    Science.gov (United States)

    Gencer Imer, Arife

    2016-04-01

    Nanostructured aluminium (Al) doped cadmium oxide (CdO) films with highly electrical conductivity and optical transparency have been deposited for the first time on soda-lime glass substrates preheated at 250 °C by ultrasonic spray coating technique. The aluminium dopant content in the CdO film was changed from 0 to 5 at%. The influencing of Al doping on the structural, morphological, electrical and optical properties of the CdO nanostructured films has been investigated. Atomic force microscopy study showed the grain size of the films is an order of nanometers, and it decreases with increase in Al dopant content. All the films having cubic structure with a lattice parameter 4.69 Å were determined via X ray diffraction analysis. The optical band gap value of the films, obtained by optical absorption, was found to increase with Al doping. Electrical studies exhibited mobility, carrier concentration and resistivity of the film strongly dependent on the doping content. It has been evaluated that optical band gap, and grain size of the nanostructured CdO film could be modified by Al doping.

  20. Study of high mobility carriers in Ni-doped CdO films

    Indian Academy of Sciences (India)

    A A Dakhel

    2013-10-01

    Cadmium oxide (CdO) doped with different amounts of nickel ion thin films have been prepared on silicon and glass substrates by vacuum evaporation technique. The effects of nickel doping on the structural, electrical, optical and optoelectronic properties of the host CdO films were systematically studied. The sample elemental composition was determined by the X-ray fluorescence spectroscopy method. The X-ray diffraction method was used to study the crystalline structure of the samples. It shows that some of Ni3+ ions occupy mainly locations when in interstitial positions and Cd2+-ion vacancies of CdO lattice. The bandgap of Ni-doped CdO suffers narrowing till 10–12% compared to undoped CdO. Such bandgap narrowing was studied within the framework of the available models. The electrical behaviours show that all the prepared Ni-doped CdO films are degenerate semiconductors. However, the nickel doping influences all the optoelectrical properties of CdO. Their d.c. conductivity, carrier concentration and mobility increased compared to undoped CdO film. The largest mobility of 112.6 cm2/V.s was measured for 1–2% Ni-doped CdO film. From optoelectronics point of view, Ni-doped CdO can be used in infrared-transparent-conducting-oxide (NIR–TCO) applications.

  1. Optical and structural properties of CdO + CdTiO{sub 3} thin films prepared by sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Mayen-Hernandez, S.A.; Torres-Delgado, G.; Castanedo-Perez, R. [Cinvestav-IPN, Unidad Queretaro, PO Box 1-798, Queretaro, Qro. 76001 (Mexico); Mendoza-Alvarez, J.G. [Depto. de Fisica, Cinvestav-IPN, PO Box 14-740, Mexico 07360 D.F. (Mexico); Zelaya-Angel, O., E-mail: ozelaya@fis.cinvestav.mx [Depto. de Fisica, Cinvestav-IPN, PO Box 14-740, Mexico 07360 D.F. (Mexico)

    2009-06-15

    Undoped thin films of the (CdO){sub 1-X} + (TiO{sub 3}){sub X} system were prepared on glass substrates using the sol-gel technique. The precursor solution was obtained starting from the mixture of two precursor solutions for CdO and TiO{sub 2} prepared separately. The Ti and Cd atomic concentrations in the precursor solution, X and (1 - X), respectively, were varied in the range 0.20 {<=} X {<=} 0.65. The films were sinterized at 450 deg. C in open atmosphere. X-ray diffraction, photoacoustic (PA) and Raman spectroscopies, atomic force microscopy, optical absorption and reflectivity, both in the intermediate infrared region, and dark resistivity ({rho}) measurements were carried out for characterization. The films present predominantly the monteponite cubic phase of CdO for X {<=} 0.30. The ilmenite rhombohedrical crystalline phase of CdTiO{sub 3} predominates for X > 0.30. The oxide formed is a mixture of CdO and CdTiO{sub 3}. The energy band gap (E{sub g}), measured from PA data, changes abruptly from 2.5 eV to 3.5 eV when X {approx =} 0.40, and the maximum E{sub g} = 3.70 eV was observed when X = 0.55. {rho} also experiences a steep variation of eight orders of magnitude when X {approx} 0.40. The photocatalytic activity was found to be maximum for X = 0.40. The resultant oxide displays some physical properties different of a simple mixture of materials.

  2. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

    2005-02-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

    Directory of Open Access Journals (Sweden)

    Manjula N.

    2015-12-01

    Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

  4. Carrier transport in undoped CdO films grown by atmospheric-pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Temperature dependent Hall effect measurements were performed for the undoped CdO films with carrier concentrations (n) ranging from 2.4 × 1019 to 2.0 × 1020 cm−3 grown on c- and r-plane sapphire substrates by the atmospheric-pressure chemical vapor deposition using Cd powder and H2O as source materials. The n dependence of the optical gap energy (Eopt) could be explained by the combination of the band gap widening due to Burstein–Moss shift and the band gap shrinkages due to the electron–electron and electron–impurity interactions. For all the films, the carrier concentrations (n) were independent of measurement temperature (T), indicating that these films were n-type degenerate semiconductors. The barrier heights at grain boundaries determined from the 1000/T-ln(μT) curves were smaller than the thermal energy at 300 K, suggesting that the grain boundary scattering plays a minor role on the carrier transport in comparison with the intra-grain scattering. The n dependence of the gradient of the μ–T curve revealed the continuous transformation of the dominant intra-grain scattering mechanism from the phonon scattering to the ionized impurity scattering with increasing n. - Highlights: • Undoped CdO films were grown on c- and r-plane sapphire substrates by CVD. • Hall effect measurements were performed for the CdO films at 83–343 K. • For many CdO films, the carrier concentration n was independent of temperature. • The grain boundary scattering plays a minor role in the CdO films. • The dominant intra-grain scattering exhibited the continuous change with n

  5. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

    Directory of Open Access Journals (Sweden)

    K. Usharani

    2015-06-01

    Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

  6. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  7. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  8. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  9. Atomic layer deposition of CdO and Cd{sub x}Zn{sub 1−x}O films

    Energy Technology Data Exchange (ETDEWEB)

    Bakke, Jonathan R.; Hägglund, Carl [Department of Chemical Engineering, Stanford University, Stanford, CA 94305 (United States); Jung, Hee Joon; Sinclair, Robert [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Bent, Stacey F., E-mail: sbent@stanford.edu [Department of Chemical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2013-07-15

    Growth of Cd{sub x}Zn{sub 1−x}O by atomic layer deposition (ALD) is demonstrated at 150 °C using diethylzinc (DEZn), dimethylcadmium (DMCd), and water as the precursors. The relative ratio of the DMCd and DEZn pulses is varied to achieve different compositions ranging from pure CdO to pure ZnO. The crystal structure of CdO is rock salt cubic and that of ZnO is hexagonal, and the alloy from ZnO to at least Cd{sub 0.56}Zn{sub 0.44}O has a hexagonal crystal structure. Transmission electron microscopy confirms polycrystalline grain features and a growth rate of ∼2.0 Å cycle{sup −1}, while selected area diffraction provides crystallographic information indicating that {111} type planes of the pure CdO ALD film are preferentially oriented to the film surface. Using spectroscopic ellipsometry, the film's optical constants are correlated with elemental composition and crystal structure. Control of these properties allows for tuning of the optical bandgap and index of refraction. - Highlights: • Polycrystalline Cd{sub x}Zn{sub 1−x}O deposited via ALD at 150 °C for the first time. • CdO {111} planes are strongly oriented parallel to SiO{sub 2}/Si(100) substrates. • Crystallinity shifts from cubic (CdO) to hexagonal (ZnO) without an observed amorphous region. • Bandgap bowing occurs due to the valence band offset and lattice mismatch of the binary materials.

  10. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  11. Thin films on cantilevers

    NARCIS (Netherlands)

    Nazeer, Hammad

    2012-01-01

    The main goal of the work compiled in this thesis is to investigate thin films for integration in micro electromechanical systems (MEMS). The miniaturization of MEMS actuators and sensors without compromising their performance requires thin films of different active materials with specific propertie

  12. Micro-structural characterization of annealed cadmium-zinc oxide thin films obtained by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Gandarilla, F.; Morales-Acevedo, Arturo; Vigil, O.; Hesiquio-Garduno, M.; Vaillant, L.; Contreras-Puente, G

    2003-02-28

    The structural properties of annealed (ZnO){sub x}(CdO){sub 1-x} thin films are studied by x-ray diffraction methods. The films were obtained by spray pyrolysis using different values for the nominal composition (x), and then they were annealed at 450 deg. C from 0 to 120 min. The structural analysis confirms previous results on the formation of a homogeneously mixed oxide semiconductor, but in which crystalline and amorphous phases co-exist for both CdO and ZnO. In this work, we show that for annealed films there is a strong interaction between the amorphous, the hexagonal ZnO and the cubic CdO phases regarding the lattice constants and the crystallite growth rate. In the annealed films, for x{<=}0.5 the optical behavior is mainly controlled by the CdO phase, so that there is a reduction of the effective band-gap of the material when the CdO crystallite size is increased, possibly due to grain size effects. On the other hand, for x>0.5 the band-gap behavior is mainly determined by the variation of the ZnO crystallite lattice parameters and the relative volumetric concentration of amorphous and crystalline ZnO in the film.

  13. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  14. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  15. Evaporated VOx Thin Films

    Science.gov (United States)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  16. In plane conducting channel at the interface of CdO–ZnO isotype thin film heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Bera, A. [Department of Physics, National Institute of Technology Agartala, West Tripura 799 046 (India); Thapa, R. [SRM Research Institute, SRM University, Kattankulathur 603203, Tamil Nadu (India); Chattopadhyay, K.K. [Thin film and Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700 032 (India); Saha, B., E-mail: biswajit.physics@gmail.com [Department of Physics, National Institute of Technology Agartala, West Tripura 799 046 (India)

    2015-05-25

    Highlights: • Radio frequency magnetron sputtering synthesis of CdO–ZnO isotype heterostructure. • Highly conducting channel at the interface of isotype heterostructure. • Charge accumulation and depletion at the interface due to band bending. - Abstract: Electrical transport properties of CdO–ZnO thin film heterostructure have been studied in this work. Highly conducting CdO thin film is deposited on glass substrate by radio frequency magnetron sputtering technique. ZnO thin film was deposited by employing the same technique on CdO coated glass substrate to prepare an isotype heterostructure of these two n-type metal oxide semiconductors. The CdO thin film was of very high electrical conductivity induced by oxygen deficient point defects. The films were characterized by X-ray diffraction measurements, X-ray photoelectron spectroscopic measurements, field emission scanning electron microscopic measurements and electrical conductivity measurements. Carrier diffusion and carrier tunneling through the interface potential lead to an outstanding conducting channel at the ZnO layer of the isotype thin film heterostructure modifying the band structure at the interface.

  17. Heterogeneity in Polymer Thin Films

    OpenAIRE

    Kanaya, Toshiji; Inoue, Rintaro; Nishida, Koji

    2011-01-01

    In the last two decades very extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties. One of the most interesting findings is the decrease in glass transition temperature Tg with film thickness in polystyrene (PS) thin film supported on Si substrate. Another interesting finding is apparent negative thermal expansivity in glassy state for thin films below ∼25 nm. In order to understand the unusual properties of polymer thin films we have st...

  18. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  19. Thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  20. Thin film temperature sensor

    Science.gov (United States)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  1. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm2. For very small battery areas, 2, microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li+ ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  2. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  3. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  4. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  5. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  6. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  7. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  8. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  9. Protein Thin Film Machines

    OpenAIRE

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-01-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fuelled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  10. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  11. Production of ZnO and CdO-ZnO thin Films by Extraction-Pyrolytic Method

    Science.gov (United States)

    Cvetkovs, A.; Kiselova, O.; Rogulis, U.; Serga, V.; Ignatans, R.

    2016-06-01

    The extraction-pyrolytic method has been applied to produce the ZnO and CdO-ZnO thin films on glass and quartz glass substrates. According to X-ray diffraction measurements, the ZnO and CdO phases have been produced with an average size of crystallites about 8-42 nm in the films. The thickness of the layers measured by a profilometer has been up to 150 nm. The surface morphology measurements show that the surface of the films may be rough and non-continuous. The SEM results confirm the dependence between the preparation procedure and the quality of the thin film.

  12. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  13. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  14. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  15. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  16. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  17. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  18. Thin film mechanics

    Science.gov (United States)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  19. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    Directory of Open Access Journals (Sweden)

    A.C. Nwanya

    2016-06-01

    Full Text Available Successive Ionic Layer Adsorption and Reaction (SILAR was used to deposit nanocrystalline cadmium oxide (CdO thin films on microscopic glass substrates for various cycles (40–120. This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12 with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD, UV–Visible Spectrophotomer (UV–Vis and Scanning Electron Microscopy (SEM. The 80th cycle was observed to be the saturation stage for this reaction. The XRD results confirmed the films to be CdO with some Cd(OH2 phase at higher deposition cycles. The films were polycrystalline in nature having high orientation along (111 and (200 planes. As the number of cycles increases the calculated average crystallite sizes increase gradually up till the 80th cycle after which a gradual decrease in the crystallite size was observed with increasing number of cycles. The films’ transmittance in the visible and near infrared region decreased as the number of cycles increased and ranged between 25 and 80%. This work shows the feasibility of using simple SILAR method at room temperature to obtain Cd(OH2 films which are transformed to CdO thin films after annealing.

  20. Polycrystalline thin film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  1. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  2. Polycrystalline thin films

    Science.gov (United States)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  3. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  4. Thin functional conducting polymer films

    OpenAIRE

    Tian, S.

    2005-01-01

    In the present study, thin functional conducting polyaniline (PANI) films, either doped or undoped, patterned or unpatterned, were prepared by different approaches. The properties of the obtained PANI films were investigated in detail by a combination of electrochemistry with several other techniques, such as SPR, QCM, SPFS, diffraction, etc. The sensing applications (especially biosensing applications) of the prepared PANI films were explored. Firstly, the pure PANI films were prepar...

  5. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described

  6. Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

    International Nuclear Information System (INIS)

    The effect of the annealing temperature (T a) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10-4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

  7. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  8. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  9. Nanotemplated lead telluride thin films

    OpenAIRE

    Li, Xiaohong; Nandhakumar, Iris S.; Attard, George S.; Markham, Matthew L.; Smith, David C.; Baumberg, Jeremy J.

    2009-01-01

    Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV–VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (100) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringenc...

  10. Thin films and froth flotation

    International Nuclear Information System (INIS)

    The properties of thin, aqueous films on solid surfaces and their central role in the froth flotation process are discussed. The stability of these films can generally be described in terms of electrostatic and van der Waals forces. Significant experimental and theoretical advances are required in many areas (e.g. short range forces, film drainage) before a clear picture of the collision of, adhesion between and detachment of bubbles and particles will emerge. (orig.)

  11. Investigation of the influence of cadmium processing on zinc gallium oxide:manganese thin films for photoluminescent and thin film electroluminescent applications

    Science.gov (United States)

    Flynn, Michael John

    Cadmium processing of ZnGa2O4 films provides a new fabrication route for phosphor powders and thin films. It relies on the enhanced diffusion due to the large vacancy concentration left by the sublimation of cadmium. Photoluminescent powders can be made with a single high temperature firing. Thin film devices can be processed at a significantly lower temperature, expanding the range of available substrates. Powders and thin films of ZnGa2O4:Mn were fabricated using starting materials in which between 0% and 50% of the ZnO was substituted by CdO. It was found that the emission spectra of the various compositions was unaffected by the change in composition, peaking at 504 nm, with the colour coordinates x = 0.08 and y = 0.69. The invariance of the emission spectrum is due to the spinel crystal structure exhibited by the compound. However, the maximum PL brightness was obtained from powders in which 10% of the ZnO had been substituted by CdO in the starting materials. The improved brightness is the result of better manganese incorporation which resulted from CdO sublimation during processing. This left a large vacancy concentration which enhanced the diffusion, and hence the manganese incorporation. In the case of thin films sputtered from cadmium processed targets, the composition of the films as deposited closely mirrored that of the target starting materials. The as deposited films were not luminescent and had to be annealed in vacuum in order to activate the manganese. EDX of these films showed that all of the cadmium had sublimed during the anneal. Very long anneal times also resulted in the loss of zinc. The decomposition products were amorphous or nanocrystalline. These films had an identical PL emission to the powders. The loss of cadmium correlated with the onset of bright 254 nm photoluminescence in the films, indicating that cadmium loss aided in the activation of the manganese. This was the result of the enhanced diffusion due to the large vacancy

  12. Thin-film ternary superconductors

    International Nuclear Information System (INIS)

    Physical properties and preparation methods of thin film ternary superconductors, (mainly molybdenum chalcogenides) are reviewed. Properties discussed include the superconducting critical fields and critical currents, resistivity and the Hall effect. Experimental results at low temperatures, together with electron microscopy data are used to determine magnetic flux pinning mechanisms in films. Flux pinning results, together with an empirical model for pinning, are used to get estimates for possible applications of thin film ternary superconductors where high current densities are needed in the presence of high magnetic fields. The normal state experimental data is used to derive several Fermi surface parameters, e.g. the Fermi velocity and the effective Fermi surface area. (orig.)

  13. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI; Hongji; HONG; Ruijin; HE; Hongbo; SHAO; Jianda; FAN; Zh

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  14. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  15. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  16. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  17. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation

  18. CdO+CdTiO{sub 3} thin films prepared by sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Mayen-Hernandez, S.A.; Torres-Delgado, G.; Castanedo-Perez, R. [Cinvestav?IPN, Unidad Queretaro, A.P. 1-798, Queretaro, Qro. 76001 (Mexico); Cruz-Orea, A.; Mendoza-Alvarez, J.G.; Zelaya-Angel, O. [Depto. de Fisica, Cinvestav?IPN, Mexico, A. P. 14-740, Mexico 07360 D. F. (Mexico)

    2006-09-22

    Thin films of the mixed CdO-TiO{sub 2} system were prepared on glass substrates using the sol-gel technique. The precursor solution was obtained starting from the mixture of two precursor solutions of CdO and TiO{sub 2} prepared separately. The Ti and Cd atomic concentrations in the precursor solution, X and (1-X), respectively, were varied in the range 0.20=films were sinterized at 450{sup o}C in open atmosphere. X-ray diffraction and photoacoustic spectroscopy techniques were used for characterization. The films present predominantly the Monteponite cubic phase of CdO for X=<0.30, and the Ilmenite rhombohedrical crystalline phase of CdTiO{sub 3} for X>0.30. The energy band gap (E{sub g}) as a function of X was analyzed, and the maximum E{sub g}=3.70eV was observed when X=0.5. (author)

  19. Effect of CdCl2 annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

    International Nuclear Information System (INIS)

    In order to study the effect of CdCl2 annealing treatment on thin CdS films and CdTe/CdS thin film solar cells, a comparative study was carried out on three types of CdTe/CdS solar cells, which had different kinds of CdS window layer: as-deposited CdS, air-annealed CdS without CdCl2 pre-coating, and CdCl2-annealed CdS. When annealed in air the CdS film was partially oxidated to CdO and CdSO4. These oxides increased the series resistance of the CdTe solar cell and led to the lowest fill factor. The presence of CdCl2 on the surface of a CdS thin film during heat treatment in air protected it from oxidation and promoted the recrystallization of the CdS film, resulting in large and closely packed grains with a grain size of ∝ 50 -150 nm. CdTe/CdS solar cell with such a kind of CdS window layer showed the largest short circuit current and highest conversion efficiency of 12.4%. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  1. Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rajammal, R. [Department of Physics, M.V.M Govt. Arts College for Women, Dindigul-624001 (India); Savarimuthu, E., E-mail: savari56@gmail.com; Arumugam, S., E-mail: savari56@gmail.com [Department of Physcis, Gandhigram Rural Institute, Gandhigram-624302 (India)

    2014-04-24

    The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10{sup −4}Ω cm and a maximum carrier concentration of 1.20×10{sup 20}cm{sup −3} have been realized.

  2. Thin Film Solid Lubricant Development

    Science.gov (United States)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  3. Thin film polymeric gel electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  4. Phase Coarsening in Thin Films

    Science.gov (United States)

    Wang, K. G.; Glicksman, M. E.

    2015-08-01

    Phase coarsening (Ostwald ripening) phenomena are ubiquitous in materials growth processes such as thin film formation. The classical theory explaining late-stage phase coarsening phenomena was developed by Lifshitz and Slyozov, and by Wagner in the 1960s. Their theory is valid only for a vanishing volume fraction of the second phase in three dimensions. However, phase coarsening in two-dimensional systems is qualitatively different from that in three dimensions. In this paper, the many-body concept of screening length is reviewed, from which we derive the growth law for a `screened' phase island, and develop diffusion screening theory for phase coarsening in thin films. The coarsening rate constant, maximum size of phase islands in films, and their size distribution function will be derived from diffusion screening theory. A critical comparison will be provided of prior coarsening concepts and improvements derived from screening approaches.

  5. Superfast Thinning of a Nanoscale Thin Liquid Film

    OpenAIRE

    Winkler, Michael; Kofod, Guggi; Krastev, Rumen; Abel, Markus

    2011-01-01

    This fluid dynamics video demonstrates an experiment on superfast thinning of a freestanding thin aqueous film. The production of such films is of fundamental interest for interfacial sciences and the applications in nanoscience. The stable phase of the film is of the order $5-50\\,nm$; nevertheless thermal convection can be established which changes qualitatively the thinning behavior from linear to exponentially fast. The film is thermally driven on one spot by a very cold needle, establishi...

  6. Thin films stress modeling : a novel approach

    OpenAIRE

    Bhattacharyya, A. S.; Ramgiri, Praveen Kumar

    2015-01-01

    A novel approach to estimate the thin film stress was discussed based on surface tension. The effect of temperature and film thickness was studies. The effect of stress on the film mechanical properties was observed.

  7. Plasma polymerized hydrogel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tamirisa, Prabhakar A. [School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Koskinen, Jere [Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Hess, Dennis W. [School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)]. E-mail: dennis.hess@chbe.gatech.edu

    2006-12-05

    Plasma polymerization was used to produce thermoresponsive hydrogel films of N-isopropylacrylamide (NIPAAm) in a single deposition step. Solvent free processing to produce laterally confined intelligent hydrogel films offers the potential for high volume production of micro-sensors/actuators. Through variation of reactor conditions such as deposition pressure and substrate temperature, it is possible to tailor and control chemical properties of the films such as crosslink density and thus swelling. Fabrication of hydrogel thin films with adequate crosslinks is critical to ensuring adhesion to substrates and stability in aqueous environments. Chemical bonding structures in plasma polymerized NIPAAm were studied using Fourier transform infrared spectroscopy and the thermoresponsive nature of plasma polymerized NIPAAm was confirmed through contact angle goniometry. A reversible temperature dependent contact angle change was observed.

  8. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  9. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  10. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  11. Organic thin-film photovoltaics

    OpenAIRE

    Liu, Miaoyin

    2010-01-01

    Zusammenfassung Zur Verbesserung der Leistungsumwandlung in organischen Solarzellen sind neue Materialien von zentraler Bedeutung, die sämtliche Erfordernisse für organische Photovoltaik-Elemente erfüllen. In der vorliegenden Arbeit „Organic thin-film photovoltaics“ wurden im Hinblick auf ein besseres Verständnis der Zusammenhänge zwischen molekularer Struktur und der Leistungsfähigkeit neue Materialien in „bulk-heterojunction“ Solarzellen und in Festphasen-Farbstoffsensibilisierten ...

  12. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C60), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 103 Ω m and 3 x 104 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 108 Ω m in dark to 3.1 x 106 Ω m under the light.

  13. Flexible Tactile Sensor Using Polyurethane Thin Film

    OpenAIRE

    Seiji Aoyagi; Tomokazu Takahashi; Masato Suzuki

    2012-01-01

    A novel capacitive tactile sensor using a polyurethane thin film is proposed in this paper. In previous studies, capacitive tactile sensors generally had an air gap between two electrodes in order to enhance the sensitivity. In this study, there is only polyurethane thin film and no air gap between the electrodes. The sensitivity of this sensor is higher than the previous capacitive tactile sensors because the polyurethane is a fairly flexible elastomer and the film is very thin (about 1 µm)....

  14. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  15. The importance of the methanol content in the precursor solution, on the physical properties of cadmium oxide thin films prepared by the sol-gel method

    International Nuclear Information System (INIS)

    Research highlights: → This work is important due to the recent interest for obtaining CdO films by simple and economical techniques. The sol-gel technique shows these characteristics. However, CdO films with higher thicknesses could be obtained starting from a high number of coats. In this work, the importance of the methanol content in the precursor solution on the physical properties of cadmium oxide thin films prepared by the sol-gel method was studied. For the first time, higher thicknesses of CdO films were obtained with a lower number of coats, changing the methanol content in the precursor solution. The films show good electrical, optical, structural properties for their use as transparent conductive films in solar cells. - Abstract: Undoped and fluorine doped cadmium oxide films were obtained by the sol-gel technique, starting from a simple precursor solution constituted of: cadmium acetate, methanol, glycerol and triethylamine and only for doped samples, ammonium fluoride as the fluoride source. Due to the methanol content used is higher with respect to the other reagents, variations in this parameter affect the viscosity and gelation time of the precursor solution, giving as result changes in the thickness. The importance of the methanol content in the growing solution on the structural, morphological, optical and electrical properties of the films is reported. Higher thickness was obtained for lower methanol content, in the range 33-46 mol, in the growing solution. Largest growing rate was obtained when the methanol content in the precursor solution was 33 mol. The films showed good characteristics for their use as transparent conductive films in solar cells.

  16. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author)

  17. Interactions in thin aqueous films

    OpenAIRE

    Hänni-Ciunel, Katarzyna

    2006-01-01

    In der Arbeit werden die Wechselwirkungen in dünnen flüssigen Filmen untersucht und modifiziert. Schaum- (gas/flüssig/gas) und Benetzungsfilme (gas/flüssig/fest) werden mittels Thin Film Pressure Balance (TFPB) untersucht. Die Apparatur wurde im Rahmen der Arbeit für die Studien an asymmetrischen Filmen aufgebaut und modifiziert. Die Ladungen an den Filmgrenzflächen werden gezielt modifiziert. Die Adsoprtion von Tensiden bestimmt die Oberflächenladung an der gas/flüssig Grenzfläche. Die Oberf...

  18. The role of thin films in wetting

    OpenAIRE

    Marmur, Abraham

    1988-01-01

    The role of thin films in wetting is reviewed. Three modes of spontaneous spreading are discussed : incomplete spreading, complete spreading and mixed-mode spreading. A thin film can be either molecular or colloidal in thickness. Molecularly adsorbed films are mainly associated with incomplete spreading. Colloidal films usually extend from the bulk of the liquid in dynamic situations of complete spreading. Their existence at equilibriuim with the bulk depends on the orientation in the gravita...

  19. Microstructural evolution of tungsten oxide thin films

    International Nuclear Information System (INIS)

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  20. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  1. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  2. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  3. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  4. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  5. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  6. Slip-controlled thin film dynamics

    OpenAIRE

    Fetzer, R.; Rauscher, M; Münch, A.; Wagner, B. A.; Jacobs, K.

    2006-01-01

    In this study, we present a novel method to assess the slip length and the viscosity of thin films of highly viscous Newtonian liquids. We quantitatively analyse dewetting fronts of low molecular weight polystyrene melts on Octadecyl- (OTS) and Dodecyltrichlorosilane (DTS) polymer brushes. Using a thin film (lubrication) model derived in the limit of large slip lengths, we can extract slip length and viscosity. We study polymer films with thicknesses between 50 nm and 230 nm and various tempe...

  7. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  8. Thin-film optical shutter

    Science.gov (United States)

    Matlow, S. L.

    1981-02-01

    The ideal solution to the excessive solar gain problem is an optical shutter, a device which switches from being highly transmissive to solar radiation to being highly reflective to solar radiation when a critical temperature is reached in the enclosure. The switching occurs because one or more materials in the device undergo a phase transition at the critical temperature. A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, was chosen as the one most likely to meet all of the requirements of the thin film optical shutter project (TFOS). The reason for this choice is explored. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a quantum mechanical method, the equilibrium bond length (EBL) theory, was developed. Some results of EBL theory are included.

  9. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  10. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  11. Structural, optical and electrical properties of Cd-doped SnO{sub 2} thin films grown by RF reactive magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moure-Flores, F. de, E-mail: jdemoure@fis.cinvestav.mx [Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Quinones-Galvan, J.G.; Hernandez-Hernandez, A.; Guillen-Cervantes, A. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Santana-Aranda, M.A. [Univ Guadalajara, CUCEI, Dept Fis, Guadalajara 44430, Jalisco (Mexico); Olvera, M. de la L. [Electrical Engineering Department, Solid State Section, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Melendez-Lira, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico)

    2012-01-15

    Transparent conducting SnO{sub 2}:Cd thin films were prepared by RF reactive magnetron co-sputtering on glass slides at a substrate temperature of 500 Degree-Sign C using CdO as cadmium source. The films were deposited under a mixed argon/oxygen atmosphere. The structural, optical and electrical properties were analyzed as a function of the Cd amount in the target. The X-ray diffraction shows that polycrystalline films were grown with both the tetragonal and orthorhombic phases of SnO{sub 2}. The obtained films have high transmittance and conductivity. The figure of merit of SnO{sub 2}:Cd films are in the order of 10{sup -3} {Omega}{sup -1}, which suggests that these films can be considered as candidates for transparent electrodes.

  12. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  13. Alumina Thin Film Growth: Experiments and Modeling

    OpenAIRE

    Wallin, Erik

    2007-01-01

    The work presented in this thesis deals with experimental and theoretical studies related to the growth of crystalline alumina thin films. Alumina, Al2O3, is a polymorphic material utilized in a variety of applications, e.g., in the form of thin films. Many of the possibilities of alumina, and the problems associated with thin film synthesis of the material, are due to the existence of a range of different crystalline phases. Controlling the formation of the desired phase and the transformati...

  14. Electrochromism of amorphous ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Se-Hee; Liu, Ping; Tracy, C. Edwin; Deb, Satyen K. [National Renewable Energy Laboratory, Center for Basic Sciences, 1617 Cole Boulevard, Golden, CO 80401 (United States); Cheong, Hyeonsik M. [Sogang University, Shinsoo-Dong, Seoul 121-742 (Korea, Republic of)

    2003-12-01

    We report on the electrochromic behavior of amorphous ruthenium oxide thin films and their electrochemical characteristics for use as counterelectrodes for electrochromic devices. Hydrous ruthenium oxide thin films were prepared by cyclic voltammetry on ITO coated glass substrates from an aqueous ruthenium chloride solution. The cyclic voltammograms of this material show the capacitive behavior including two redox reaction peaks in each cathodic and anodic scan. The ruthenium oxide thin film electrode exhibits a 50% modulation of optical transmittance at 670 nm wavelength with capacitor charge/discharge.

  15. Influence of pH of spray solution on optoelectronic properties of cadmium oxide thin films

    International Nuclear Information System (INIS)

    Highly conducting transparent cadmium oxide thin films were prepared by the conventional spray pyrolysis technique. The pH of the spray solution is varied by adding ammonia/hydrochloric acid. The effect of pH on the morphology, crystallinity and optoelectronic properties of these films is studied. The structural analysis showed all the films in the cubic phase. For the films with pH < 7 (acidic condition), the preferred orientation is along the (111) direction and for those with pH >7 (alkaline condition), the preferred orientation is along the (200) direction. A lowest resistivity of 9.9 × 10−4 Ω·cm (with carrier concentration = 5.1 × 1020 cm−3, mobility = 12.4 cm2/(V·s)) is observed for pH ≈ 12. The resistivity is tuned almost by three orders of magnitude by controlling the bath pH with optical transmittance more than 70%. Thus, the electrical conductivity of CdO films could be easily tuned by simply varying the pH of the spray solution without compromising the optical transparency. (paper)

  16. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  17. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  18. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  19. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  20. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  1. Superconducting thin-film gradiometer

    International Nuclear Information System (INIS)

    We describe the design, fabrication, and performance of planar thin-film dc SQUID's and planar gradiometers in which a dc SQUID is incorporated as a null detector. Each gradiometer was fabricated on a planar substrate and measured an off-diagonal component of changes in the magnetic field gradient. The gradiometer with the highest sensitivity had 127 x 33-mm loops that could be connected in parallel or in series: The sensitivities were 2.1 x 10-13 and 3.7 x 10-13 T m-1 Hz/sup -1/2/, respectively. The intrinsic balance of the gradiometers was about 100 ppm for fields parallel to their plane, and a balance of about 1 ppm could be achieved for fields perpendicular to their plane. When the series-loop gradiometer was rotated through 3600 in the earth's field, the output returned to its initial value to within an amount corresponding to a balance of 1 ppm. Possible improvements in sensitivity are discussed

  2. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  3. Laser-annealing of thin semiconductor films

    OpenAIRE

    Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul

    1994-01-01

    Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.

  4. Advances in CZTS thin films and nanostructured

    Science.gov (United States)

    Ali, N.; Ahmed, R.; Bakhtiar-Ul-Haq; Shaari, A.

    2015-06-01

    Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

  5. Characteristics and durability of fluoropolymer thin films

    OpenAIRE

    Cheneler, David; Bowen, James; Evans, Stephen D.; Górzny, Marcin; Adams, Michael J; Ward, Michael C.L.

    2011-01-01

    The use of plasma-polymerised fluoropolymer (CFxOy) thin films in the manufacture of microelectromechanical systems (MEMS) devices is well-established, being employed in the passivation step of the deep reactive ion etching (DRIE) process, for example. This paper presents an investigation of the effect of exposure to organic and aqueous liquid media on plasma polymerised CFxOy thin films. Atomic force microscopy (AFM), scanning electron microscopy (SEM), ellipsometry, X-ray photoelectron spec...

  6. Microstructural evolution of tungsten oxide thin films

    Science.gov (United States)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  7. Microstructural evolution of tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hembram, K.P.S.S., E-mail: hembram@isu.iisc.ernet.in [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India); Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore - 560064 (India); Thomas, Rajesh; Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India)

    2009-10-30

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  8. Effect of pH of spray solution on the electrical properties of cadmium oxide thin films

    International Nuclear Information System (INIS)

    Highly conducting transparent cadmium oxide thin films were prepared by conventional spray pyrolysis technique on glass at 375 °C substrate temperature. The pH of the spray solution was varied by adding ammonia/hydrochloric acid in the spray solution. The XRD pattern showed cubic phase. A lowest resistivity of 9.9 × 10−4 Ω cm (with carrier concentration (n) = 5.1 × 1020 cm−3, mobility (µ)=12.4 cm2/Vs) is observed for pH ∼12. The resistivity is tuned almost by three orders of magnitude by controlling the bath pH with optical transmittance more than 70 %. Thus, without any doping, the electrical conductivity of CdO films could be easily tuned by simply varying the pH of spray solution without compromising the transparency and keeping the other deposition parameters fixed

  9. Effect of pH of spray solution on the electrical properties of cadmium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hodlur, R. M.; Gunnagol, Raghu M.; Rabinal, M. K., E-mail: mkrabinal@yahoo.com [Department of Physics, Karnatak University, Dharwad - 580 003, Karnataka (India)

    2015-06-24

    Highly conducting transparent cadmium oxide thin films were prepared by conventional spray pyrolysis technique on glass at 375 °C substrate temperature. The pH of the spray solution was varied by adding ammonia/hydrochloric acid in the spray solution. The XRD pattern showed cubic phase. A lowest resistivity of 9.9 × 10{sup −4} Ω cm (with carrier concentration (n) = 5.1 × 10{sup 20} cm{sup −3}, mobility (µ)=12.4 cm{sup 2}/Vs) is observed for pH ∼12. The resistivity is tuned almost by three orders of magnitude by controlling the bath pH with optical transmittance more than 70 %. Thus, without any doping, the electrical conductivity of CdO films could be easily tuned by simply varying the pH of spray solution without compromising the transparency and keeping the other deposition parameters fixed.

  10. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  11. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  12. Bimodal swelling responses in microgel thin films.

    Science.gov (United States)

    Sorrell, Courtney D; Lyon, L Andrew

    2007-04-26

    A series of studies on microgel thin films is described, wherein quartz crystal microgravimetry (QCM), surface plasmon resonance (SPR), and atomic force microscopy (AFM) have been used to probe the properties of microstructured polymer thin films as a function of film architecture and solution pH. Thin films composed of pNIPAm-co-AAc microgels were constructed by using spin-coating layer-by-layer (scLbL) assembly with poly(allylamine hydrochloride) (PAH) as a polycationic "glue". Our findings suggest that the interaction between the negatively charged microgels and the positively charged PAH has a significant impact on the pH responsivity of the film. These effects are observable in both the optical and mechanical behaviors of the films. The most significant changes in behavior are observed when the motional resistance of a quartz oscillator is monitored via QCM experiments. Slight changes to the film architecture and alternating the pH of the environment significantly changes the QCM and SPR responses, suggesting a pH-dependent swelling that is dependent on both particle swelling and polyelectrolyte de-complexation. Together, these studies allow for a deeper understanding of the morphological changes that take place in environmentally responsive microgel-based thin films. PMID:17407344

  13. Post deposition purification of PTCDA thin films

    International Nuclear Information System (INIS)

    The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films

  14. Microcrystalline organic thin-film solar cells.

    Science.gov (United States)

    Verreet, Bregt; Heremans, Paul; Stesmans, Andre; Rand, Barry P

    2013-10-11

    Microcrystalline organic films with tunable thickness are produced directly on an indium-tin-oxide substrate, by crystallizing a thin amorphous rubrene film followed by its use as a template for subsequent homoepitaxial growth. These films, with exciton diffusion lengths exceeding 200 nm, produce solar cells with increasing photocurrents at thicknesses up to 400 nm with a fill factor >65%, demonstrating significant potential for microcrystalline organic electronic devices. PMID:23939936

  15. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  16. Thin-film Rechargeable Lithium Batteries

    Science.gov (United States)

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  17. Rupture Limit of Thin Moving Films

    Science.gov (United States)

    Padrino, Juan C.; Joseph, Daniel D.; Kim, Hyungjun

    2010-11-01

    The rupture of a thin film in another fluid is studied including the effects of disjoining pressure. The study considers the linear stability of a moving viscous film in a motionless inviscid fluid and of a stagnant viscous film in a motionless viscous fluid. These are analyzed by means of the Navier--Stokes equations and the dissipation approximation based on potential flow. Results reveal that the dissipation method provides a good approximation for the case of a moving film, whereas its predictions are off the mark for the stagnant film case. The thickness of the gap at the trough of Kelvin-Helmholtz waves locates the formation of holes. The wavelength at final collapse is determined by the length of waves at the trough of the corrugated film. The disjoining pressure effects cause very fast break-up for very thin films. These effects influence the cutoff wavenumber. In the limit of small gaps on this corrugated film, the Reynolds and Weber numbers tend to zero with the gap size, the Ohnesorge number increases like the reciprocal of the square root and the Hamaker number like the reciprocal of the square of the gap. The motion of the film does not enter at the point of formation of holes. Moreover, for the most unstable wave, the ratio of the wavelength to film thickness is found to decrease with decreasing film thickness.

  18. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood. PMID:27377606

  19. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  20. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  1. Nanostructured thin films as functional coatings

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  2. Nanostructured thin films as functional coatings

    International Nuclear Information System (INIS)

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  3. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  4. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    Science.gov (United States)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  5. Electrochemical Analysis of Conducting Polymer Thin Films

    Directory of Open Access Journals (Sweden)

    Bin Wang

    2010-04-01

    Full Text Available Polyelectrolyte multilayers built via the layer-by-layer (LbL method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting polymer, poly(p-phenylene vinylene (PPV, in the preparation of a stable thin film via the LbL method. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to characterize the ionic conductivity of the PPV multilayer films. The ionic conductivity of the films has been found to be dependent on the polymerization temperature. The film conductivity can be fitted to a modified Randle’s circuit. The circuit equivalent calculations are performed to provide the diffusion coefficient values.

  6. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  7. Surface morphology of thin films polyoxadiazoles

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2011-12-01

    Full Text Available urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used. Photos have been taken in noncontact mode while observing an area of 10 x 10 microns.Findings: The analysis of images has confirmed that the quality of thin films depends upon the used polymers. It was also observed that the parameters of the spin coating method have significant effect on the morphology and the surface roughness. The speed of the spin has got a strong impact on the topography of the thin films obtained.Research limitations/implications: The morphology of polyoxadiazoles thin films has been described. This paper include description how the spin speed influences the morphology of polymer thin films. In order to use a polymer thin film in photovoltaics or optoelectronics it must have a uniform thickness and a low surface roughness. Further research, in which the optical properties of thin films are investigated, is strongly recommended.Practical implications: Conductive polymers may find applications in photovoltaics or optoelectronics. It is important to study this group of material engineering and to find a new use for them. Materials from which thin films are made of will have an impact on the properties and characteristics of electronics devices in which they are be applied.Originality/value: The value of this paper is defining the optimal parameters of spin-coating technology for six polyoxadiazoles. The results allow the choosing optimal parameters of the deposition process. Spin coating is a very good method to obtain thin films which

  8. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  9. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  10. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  11. Crystallization of zirconia based thin films.

    Science.gov (United States)

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. PMID:26119755

  12. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  13. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  14. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  15. Thin-film solar cells. Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Bloss, W.H.; Pfisterer, F.; Schock, H.W. (Stuttgart Univ. (Germany, F.R.). Inst. fuer Physikalische Elektronik)

    1990-01-01

    The authors present the state of the art in research and development, technology, production and marketing, and of the prospects of thin-film solar cells. Thin-film solar cells most used at present are based on amorphous silicon and on the compound semiconductors CuInSe{sub 2} and CdTe. Efficiencies in excess 12% have been achieved (14.1% with CuInSe{sub 2}). Stability is the main problem with amorphous silicon. Thin-film solar cells made from compound semiconductors do not have this problem, though their cost-effective series production needs to be shown still. The development potential of the three types mentioned will be ca. 30% in terms of efficiency: in terms of production cost, it is estimated with some certainty to be able to reach the baseline of 1 DM/Watt peak output (W{sub p}). (orig.).

  16. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  17. Method for synthesizing thin film electrodes

    Science.gov (United States)

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  18. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  19. Optical and electrical characterization of fluorine doped cadmium oxide thin films prepared by the sol-gel method

    International Nuclear Information System (INIS)

    Highly transparent and conducting fluorine (F) doped cadmium oxide (CdO) thin films were deposited on glass slides by the sol-gel method. The films were doped by the addition of ammonium fluoride to the precursor solution whose optimum concentration was determined. The films were fired in an open atmosphere at 350 deg. C and after that, exposed to annealing treatments in different atmospheres (N2, N2/H2 mixture and Ar) at the same temperature. The films were characterized by ultraviolet-visible spectroscopy, X-ray diffraction and scanning electron microscopy. The resistivity was determined by the four probes method and current-voltage measurements in accordance with the standard Van der Pauw configuration. The CdO:F thin films obtained, showed high polycrystalline quality and high transmission in the visible region (≥ 90%), shifting towards the blue region of the absorption edge as the fluorine concentration in the precursor solution was increased from 0 to 30 at.%. The lowest resistivity values were reached for the samples with F content higher or equal to 5% and annealed in either N2 or a 96/4 N2/H2 gas mixture. Our resistivity value reached in the CdO:F layers was 4.5 x 10-4 Ω cm (20 Ω/square)

  20. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  1. Thin film oxygen partial pressure sensor

    Science.gov (United States)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  2. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  3. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  4. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.;

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...... and strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  5. Thin Films Made Fast and Modified Fast

    International Nuclear Information System (INIS)

    Thin films are playing a more and more important role for technological applications and there are many aspects of materials surface processing and thin film production, ranging from simple heat treatments to ion implantation or laser surface treatments. These methods are often very complicated, involving many basic processes and they have to be optimized for the desired application. Nuclear methods, especially Moessbauer spectroscopy, can be successfully applied for this task and some examples will be presented for laser-beam and ion-beam based processes.

  6. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  7. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  8. Electrical analysis of niobium oxide thin films

    International Nuclear Information System (INIS)

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O2 was kept constant at 1 Pa, while the O2 partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb2O5 stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O2). • Raman showed that increasing P(O2), Nb2O5 amorphous increases. • Conductivity tends to decrease with the increase of P(O2). • Dielectric analysis indicates the inexistence of preferential grow direction

  9. Structural and photocarrier radiometric characterization of Cu{sub x}(CdTe){sub y}O{sub z} thin films growth by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Velazquez-Hernandez, R., E-mail: ruvel2@yahoo.com.m [Division de Investigacion y Posgrado, Facultad de Ingenieria, Universidad Autonoma de Queretaro, Cerro de las Campanas S/N, Queretaro, Qro., Mexico, C.P. 76010 (Mexico); Rojas-Rodriguez, I. [Universidad Tecnologica de Queretaro, Av. Pie de la Cuesta S/N, Sn. Pedrito Penuelas, Queretaro, Qro. Mexico (Mexico); Carmona-Rodriguez, J.; Jimenez-Sandoval, S. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro., Mexico C.P.76001 (Mexico); Rodriguez-Garcia, M.E. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriqulla, Apartado Postal 1-1010, Queretaro, Qro. Mexico (Mexico)

    2011-01-31

    This research presents a structural and photocarrier radiometric (PCR) characterization of Cu{sub x}(CdTe){sub y}O{sub z} thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu{sub 2}Te and CdO.

  10. Dynamics of liquid films and thin jets

    Science.gov (United States)

    Zak, M.

    1979-01-01

    The theory of liquid films and thin jets as one- and two-dimensional continuums is examined. The equations of motion have led to solutions for the characteristic speeds of wave propagation for the parameters characterizing the shape. The formal analogy with a compressible fluid indicates the possibility of shock wave generation in films and jets and the formal analogy to the theory of threads and membranes leads to the discovery of some new dynamic effects. The theory is illustrated by examples.

  11. Viscous fingering in volatile thin films

    OpenAIRE

    Agam, Oded

    2008-01-01

    A thin water film on a cleaved mica substrate undergoes a first order phase transition between two values of film thickness. By inducing a finite evaporation rate of the water, the interface between the two phases develops a fingering instability similar to that observed in the Saffman-Taylor problem. We draw the connection between the two problems, and construct solutions describing the dynamics of evaporation in this system.

  12. Thin film dynamics with surfactant phase transition

    OpenAIRE

    Köpf, M. H.; Gurevich, S. V.; Friedrich, R.

    2009-01-01

    A thin liquid film covered with an insoluble surfactant in the vicinity of a first-order phase transition is discussed. Within the lubrication approximation we derive two coupled equations to describe the height profile of the film and the surfactant density. Thermodynamics of the surfactant is incorporated via a Cahn-Hilliard type free-energy functional which can be chosen to describe a transition between two stable phases of different surfactant density. Within this model, a linear stabilit...

  13. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  14. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  15. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  16. Energetic Deposition of Niobium Thin Film in Vacuum

    OpenAIRE

    Wu, Genfa

    2002-01-01

    Niobium thin films are expected to be free of solid inclusions commonly seen in solid niobium. For particle accelerators, niobium thin film has the potential to replace the solid niobium in the making of the accelerating structures. In order to understand and improve the superconducting performance of niobium thin films at cryogenic temperature, an energetic vacuum deposition system has been developed to study deposition energy effects on the properties of niobium thin films on various substr...

  17. Correlated dewetting patterns in thin polystyrene films

    International Nuclear Information System (INIS)

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes

  18. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  19. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  20. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  1. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  2. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  3. US Polycrystalline Thin Film Solar Cells Program

    Science.gov (United States)

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  4. US polycrystalline thin film solar cells program

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H S; Zweibel, K; Mitchell, R L [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  5. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  6. Rechargeable Thin-film Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  7. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric insula

  8. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, J.; Hueting, R.J.E.

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offe

  9. Resistance contact thin-film resistor

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2008-10-01

    Full Text Available The analytical model of the calculation of the contact resistance of the thin-film resistor is Offered. The Explored dependency of the contact resistance from wedge of the pickling. The Considered influence adhesive layer on warm-up stability of the resistor. They Are Received formulas of the calculation systematic and casual inaccuracy contributed by contact resistance.

  10. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  11. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  12. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  13. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  14. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  15. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  16. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  17. Thin Films Characterization by Ultra Trace Metrology

    International Nuclear Information System (INIS)

    Sensitive and accurate characterization of thin films used in nanoelectronics, thinner than a few nm, represents a challenge for many conventional methods, especially when considering in-line control. With capabilities in the E10 at/cm2 (2O3 tunnel oxide deposited on a magnetic stack. On the other hand, composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Under the best conditions, determination of the composition of Co -based self aligned barriers (CoWP and CoWMoPB films with Co concentration >80%) is done with a precision of 6% on P, 8% on Mo and 13% on W (standard deviation)

  18. Hematite thin films: growth and characterization

    Science.gov (United States)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    We have grown hematite (α - Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α - Fe 2O3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  19. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  20. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  1. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  2. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  3. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  4. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  5. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    Science.gov (United States)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  6. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  7. Basic thin film processing for high-Tc superconductors

    International Nuclear Information System (INIS)

    Much attention has been paid for the thin films of perovskite-type oxides especially for the thin films of the high-Tc superconducting ceramics. Historically the thin films of the perovskite-type oxides have been studied as a basic research for ferroelectric materials. Thin films of BaTiO3 and PbTiO3 were tried to deposited and there ferroelectricity was evaluated. Recently this kind of perovskite thin films, including PZT (PbTiO3-PbZrO3) and PLZT [(Pb, La) (Zr, T)O3] have been studied in relation to the synthesis of thin film dielectrics, pyroelectrics, piezoelectrics, electro-optic materials, and acousto-optic materials. Thin films of BPB (BaPbO3- BaBiO3) were studied as oxide superconductors. At present the thin films of the rare-earth high-Tc superconductors of LSC (La1-xSrxCuO4) and YBC (YBa2Cu3O7-δ) have been successfully synthesized owing to the previous studies on the ferroelectric thin films of the perovskite- type oxides. Similar to the rare-earth high-Tc superconductors thin films of the rare-earth-free high-Tc superconductors of BSCC (Bi-Sr-Ca-Cu-O)9 and TBCC (Tl- Ba-Ca-Cu-O)10 system have been synthesized. In this section the basic processes for the fabrication of the high- Tc perovskite superconducting thin films are described

  8. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  9. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    International Nuclear Information System (INIS)

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In2O3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T10/Rsheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

  10. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  11. INVESTIGATION OF PHOTOELECTROCHROMIC THIN FILM AND DEVICE

    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen

    2005-01-01

    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  12. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  13. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  14. Nitrogen doped zinc oxide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  15. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  16. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  17. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  18. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  19. EBSD analysis of electroplated magnetite thin films

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.

    2010-05-01

    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  20. Generalized Ellipsometry on Ferromagnetic Sculptured Thin Films.

    Science.gov (United States)

    Schmidt, Daniel; Hofmann, Tino; Mok, Kah; Schmidt, Heidemarie; Skomski, Ralf; Schubert, Eva; Schubert, Mathias

    2011-03-01

    We present and discuss generalized ellipsometry and generalized vector-magneto-optic ellipsometry investigations on cobalt nanostructured thin films with slanted, highly-spatially coherent, columnar arrangement. The samples were prepared by glancing angle deposition. The thin films are highly transparent and reveal strong form-induced birefringence. We observe giant Kerr rotation in the visible spectral region, tunable by choice of the nanostructure geometry. Spatial magnetization orientation hysteresis and magnetization magnitude hysteresis properties are studied using a 3-dimensional Helmholtz coil arrangement allowing for arbitrary magnetic field direction at the sample position for field strengths up to 0.4 Tesla. Analysis of data obtained within this novel vector-magneto-optic setup reveals magnetization anisotropy of the Co slanted nanocolumns supported by mean-field theory modeling.

  1. Thin film sensors for measuring small forces

    OpenAIRE

    F. Schmaljohann; Hagedorn, D.; LÖffler, F.

    2015-01-01

    Especially in the case of measuring small forces, the use of conventional foil strain gauges is limited. The measurement uncertainty rises by force shunts and is due to the polymer foils used, as they are susceptible to moisture. Strain gauges in thin film technology present a potential solution to overcome these effects because of their direct and atomic contact with the measuring body, omitting an adhesive layer and the polymer foil. For force measurements up to 1 N, a...

  2. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; M. Bruma; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  3. Recent developments in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. (Inst. Militar de Engenharia, Rio de Janeiro, RJ (Brazil))

    1990-12-15

    In recent years, remarkable progress has been made in improving the photovoltaic (PV) conversion efficiencies of thin film solar cells. The best active-area efficiencies (air mass 1.5) of thin film solar cells reported are as follows: polycrystalline CuInSe{sub 2}, 14.1%; CuIn(Ga)Se{sub 2}, 12.9%; CdTe, 12.3%, total area; single-junction hydrogenated amorphous silicon (a-Si:H), 12.0%; multiple-junction a-Si:H, 13.3%; cleaved epitaxial GaAs-Ga{sub 1-x}Al{sub x}As, 21.5%, total area. Laboratory methods for preparing small thin film solar cells are evaporation, closed-space sublimation, closed-space vapor transport, vapor phase epitaxy and metallo-organic chemical vapor deposition, while economic large-area deposition techniques such as sputtering, glow discharge reduction, electrodeposition, spraying and screen printing are being used for module fabrication. The following aperture-area efficiencies have been measured, at the Solar Energy Research Inst., for thin film modules: a-Si:H, 9.8%, 933 cm{sup 2}; CuIn(Ga)Se{sub 2}, 11.1%, 938 cm{sup 2}; CdTe, 7.3%, 838 cm{sup 2}. The instability issue of a-Si:H continues to be a high priority area. It is necessary to improve the open-circuit voltage of CuIn(Ga)Se{sub 2} cells, which do not seem to exhibit any intrinsic degradation mechanisms. With continued progress and increased production, PV modules are likely to become competitive for medium-scale power requirements in the mid-1990s. (orig.).

  4. Amorphous silicon for thin-film transistors

    OpenAIRE

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addressable image sensor arrays, due to a new technology of low-cost, Iow-temperature processing overlarge areas. ... Zie: Abstract

  5. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  6. Ferromagnetic Liquid Thin Films Under Applied Field

    OpenAIRE

    Banerjee, S.; Widom, M.

    1999-01-01

    Theoretical calculations, computer simulations and experiments indicate the possible existence of a ferromagnetic liquid state, although definitive experimental evidence is lacking. Should such a state exist, demagnetization effects would force a nontrivial magnetization texture. Since liquid droplets are deformable, the droplet shape is coupled with the magnetization texture. In a thin-film geometry in zero applied field, the droplet has a circular shape and a rotating magnetization texture ...

  7. Electrochemical Analysis of Conducting Polymer Thin Films

    OpenAIRE

    Bin Wang; Vyas, Ritesh N.

    2010-01-01

    Polyelectrolyte multilayers built via the layer-by-layer (LbL) method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting...

  8. Structures for dense, crack free thin films

    Science.gov (United States)

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2011-03-08

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  9. Electrical characterization of thin film ferroelectric capacitors

    OpenAIRE

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D; Keur, W.; J. Schmitz; Hueting, R.J.E.

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and ...

  10. Thin-film silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A.V.; Meier, J.; Kroll, U.; Droz, C.; Bailat, J. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Schade, H. [RWE Schott Solar GmbH, Putzbrunn (Germany); Vanecek, M. [Academy of Sciences, Prague (Czech Republic). Inst. of Physics; Vallat Sauvain, E.; Wyrsch, N. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Unaxis SPTec S A, Neuchatel (Switzerland)

    2004-07-01

    This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ({mu}c-Si:H) thin films (layers), both deposited at low temperatures (200{sup o}C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J{sub sc},FF,V{sub oc}) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the {mu}c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of

  11. Fluxoid dynamics in superconducting thin film rings

    OpenAIRE

    Kirtley, J. R.; Tsuei, C. C.; Kogan, V. G.; Clem, J. R.; Raffy, H.; Li, Z. Z.

    2003-01-01

    We have measured the dynamics of individual magnetic fluxoids entering and leaving photolithographically patterned thin film rings of the underdoped high-temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\\delta}$, using a variable sample temperature scanning SQUID microscope. These results can be qualitatively described using a model in which the fluxoid number changes by thermally activated nucleation of a Pearl vortex in, and transport of the Pearl vortex across, the ring wall.

  12. Superconducting properties of iron chalcogenide thin films

    Directory of Open Access Journals (Sweden)

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  13. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  14. Supramolecular structure of electroactive polymer thin films

    Science.gov (United States)

    Kornilov, V. M.; Lachinov, A. N.; Karamov, D. D.; Nabiullin, I. R.; Kul'velis, Yu. V.

    2016-05-01

    This paper presents the results of an experimental investigation of the supramolecular structure of polydiphenylenephthalide thin films that exhibit effects of resistive switching. The supramolecular structure of the polymer has been investigated using small-angle neutron scattering in conjunction with atomic force microscopy. It has been found that the internal structure of polymer films consists of structural elements in the form of spheroids. The sizes of the structural elements, which were obtained from the neutron scattering data and analysis of the atomic force microscopy images, correlate well with each other. A model of the formation of polymer layers has been proposed. The observed structural elements in polymer films are formed due to the association of macromolecules in the initial polymer solution.

  15. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  16. Irradiation effects in YBCO thin films

    International Nuclear Information System (INIS)

    Oxide superconductors are very sensitive to electron or ion beam irradiation/implantation. In the past 19 years after high-Tc (HTc) superconductivity was discovered in these materials, many aspects of interactions of accelerated particles with HTc thin films were investigated. In this paper short review of most significant phenomena is given, especially of those important for electronic applications (controllable reduction of critical temperature and critical current density) and their applications for HTc film patterning, fabrication of HTc Josephson junctions and SQUIDs. Some new results in creating 3-d inhomogeneous regions in YBCO superconductors by ion irradiation/implantation and investigation of high harmonic generation in YBCO film modified by 100 keV oxygen ions are presented. (author)

  17. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  18. Magnetization relaxation in sputtered thin permalloy films

    Science.gov (United States)

    Oliveira, R. C.; Rodríguez-Suárez, R. L.; Aguiar, F. M. De; Rezende, S. M.; Fermin, J. R.; Azevedo, A.

    2004-05-01

    In order to understand the underlying phenomena of magnetization damping in metallic thin films, samples of permalloy films were grown by magnetron sputtering, and their 8.6-GHz ferromagnetic resonance linewidth ΔH has been measured as a function of the Permalloy (Py) film thickness t, at room temperature. We made samples of Py(t)/Si(001) and X/Py(t)/X/Si(001), with X=Pd (40Å), and Cr (25Å), with 20Å < t < 200Å. While ΔH scales with t-2 in the bare Py/Si series, it is shown that the damping behavior strongly depends on X in the sandwich samples.

  19. Nanocrystalline silicon based thin film solar cells

    Science.gov (United States)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  20. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  1. Preface: Thin films of molecular organic materials

    Science.gov (United States)

    Fraxedas, J.

    2008-03-01

    This special issue is devoted to thin films of molecular organic materials and its aim is to assemble numerous different aspects of this topic in order to reach a wide scientific audience. Under the term 'thin films', structures with thicknesses spanning from one monolayer or less up to several micrometers are included. In order to narrow down this relaxed definition (how thin is thin?) I suggest joining the stream that makes a distinction according to the length scale involved, separating nanometer-thick films from micrometer-thick films. While the physical properties of micrometer-thick films tend to mimic those of bulk materials, in the low nanometer regime new structures (e.g., crystallographic and substrate-induced phases) and properties are found. However, one has to bear in mind that some properties of micrometer-thick films are really confined to the film/substrate interface (e.g. charge injection), and are thus of nanometer nature. Supported in this dimensionality framework, this issue covers the most ideal and model 0D case, a single molecule on a surface, through to the more application-oriented 3D case, placing special emphasis on the fascinating 2D domain that is monolayer assembly. Thus, many aspects will be reviewed, such as single molecules, self-organization, monolayer regime, chirality, growth, physical properties and applications. This issue has been intentionally restricted to small molecules, thus leaving out polymers and biomolecules, because for small molecules it is easier to establish structure--property relationships. Traditionally, the preparation of thin films of molecular organic materials has been considered as a secondary, lower-ranked part of the more general field of this class of materials. The coating of diverse surfaces such as silicon, inorganic and organic single crystals, chemically modified substrates, polymers, etc., with interesting molecules was driven by the potential applications of such molecular materials

  2. Some physical properties of CdO:F thin films prepared by spray pyrolysis

    Science.gov (United States)

    Bagheri Khatibani, A.; Hallaj, Z. A.; Rozati, S. M.

    2015-12-01

    Different attractions of cadmium oxide in the field of materials science especially in semiconductor science and engineering encouraged us to study its physical properties. The preparation of a transparent conducting cadmium oxide doped with various concentration of fluorine (0%, 3%, 6%) in the spray solution on a glass substrate by spray pyrolysis is reported. The structural, morphological, electrical and optical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall effect and UV-visible spectrophotometry. Different optical quantities such as optical band gap, refractive index, extinction coefficient, Urbach energy, oscillator energy, dispersion energy and nonlinear optical susceptibility were determined. The XRD, SEM, Hall effect and AFM showed the doping concentration effects on CdO thin-films properties. Observations such as the decrease of the sheet resistance to 9.20 (Ω/Box), the mobility increase up to 29.3(cm2/V·s), the transmittance up to 84% and the increase of the band gap up to 2.76(eV) state the sample CdO:F 3% is the best candidate for transparent and conducting oxide application.

  3. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  4. Influences of indium doping and annealing on microstructure and optical properties of cadmium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yuankun [University of Shanghai for Science and Technology, School of Materials Science and Engineering, Shanghai (China); Lei, Pei; Zhu, Jiaqi; Han, Jiecai [Harbin Institute of Technology, Center for Composite Materials, Harbin (China)

    2016-04-15

    The influences of indium doping and subsequent annealing in nitrogen and air atmospheres on the microstructure and optical properties of cadmium oxide films were studied in detail with the aid of various characterizations. X-ray photoelectronic spectroscopy analysis shows that indium atom forms chemically oxidized bonds in Cd-O matrix. X-ray diffraction results demonstrate that CdO structure remains FCC structure with indium doping, whereas the preferential orientation transforms from (222) into (200) orientation. Indium doping prevents the large crystalline growth, and this role still works under both nitrogen and air annealing processes. Similarly, CdO films show rough surface under annealing conditions, but the force has been greatly weakened at high doping level. It is clear that refractive index and extinction coefficient are closely correlated with crystalline size for undoped films, whereas it turns to the doping level for doped films, which can be performed by the mechanism of indium atom substitution. This work provides a very useful guild for design and application of optical-electronic devices. (orig.)

  5. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei

    2013-01-01

    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  6. Investigating the interfacial dynamics of thin films

    Science.gov (United States)

    Rosenbaum, Aaron W.

    This thesis probes the interfacial dynamics and associated phenomena of thin films. Surface specific tools were used to study the self-assembly of alkanethiols, the mono- and bilayer dynamics of SF6, and the surface motion of poly(methyl methacrylate). Non-pertubative helium atom scattering was the principal technique used to investigate these systems. A variety of other complementary tools, including scanning tunneling microscopy, electron diffraction, Auger spectroscopy, atomic force microscopy, and ellipsometry were used in tandem with the neutral atom scattering studies. Controlling the spontaneous assembly of alkanethiols on Au(111) requires a better fundamental understanding of the adsorbate-adsorbate and substrate-adsorbate interactions. Our characterization focused on two key components, the surface structure and adsorbate vibrations. The study indicates that the Au(111) reconstruction plays a larger role than anticipated in the low-density phase of alkanethiol monolayers. A new structure is proposed for the 1-decanethiol monolayer that impacts the low-energy vibrational mode. Varying the alkane chain lengths imparts insight into the assembly process via characterization of a dispersionless phonon mode. Studies of SF6 physisorbed on Au(111) bridge surface research on rare gas adsorbates with complicated dynamical organic thin films. Mono- and bilayer coverages of SF6/Au(111) were studied at cryogenic temperatures. Our experiments probed the surface properties of SF6 yielding insights into substrate and coverage effects. The study discovered a dispersionless Einstein oscillation with multiple harmonic overtones. A second layer of SF6 softened the mode, but did not show any indications of bulk or cooperative interactions. The vibrational properties of SF 6 showed both striking similarities and differences when compared with physisorbed rare gases. Lastly, this thesis will discuss studies of thin film poly(methyl methacrylate) on Si. The non-pertubative and

  7. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  8. Theoretical investigation of the thermodynamic properties of metallic thin films

    International Nuclear Information System (INIS)

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  9. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN

    2009-01-01

    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  10. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  11. Pulsed laser deposition of pepsin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kecskemeti, G. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: kega@physx.u-szeged.hu; Kresz, N. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Smausz, T. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Nogradi, A. [Department of Ophthalmology, University of Szeged, H-6720, Szeged, Koranyi fasor 10-11 (Hungary)

    2005-07-15

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ({lambda} = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm{sup 2}. The pressure in the PLD chamber was 2.7 x 10{sup -3} Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm{sup 2}. The protein digesting capacity of the transferred pepsin was tested by adapting a modified 'protein cube' method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  12. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures.

    Science.gov (United States)

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  13. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  14. Stripe glasses in ferromagnetic thin films

    Science.gov (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.

    2016-02-01

    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  15. Memristive switching in vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Buerger, Danilo; John, Varun; Kovacs, Gyoergy; Skorupa, Ilona; Helm, Manfred; Schmidt, Heidemarie [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany)

    2011-07-01

    Memristive devices exhibit an improved performance at ultra-small scales. The microscopic model for memristive behavior in oxide nanostructures often depends on the distribution of oxygen vacancies and is determined by the cation species. In 2008 HP presented the first bipolar TiO2-based memristor for resistive applications, where the drift of oxygen vacancies causes a change in the resistance of ultrathin TiO2 films which can be locally modified by ion implantation. We prepared vanadium dioxide (VO2) thin films with the reversible metal-insulator phase transition at the thermochromic switching temperature of around 340 K by pulsed laser deposition on (0001)-sapphire substrates and analyzed the electric-pulse-induced thermochromic switching in the VO2 gap region at room temperature due to local heating. As a result, we find the typical pinched hysteresis loop of a memristor, a repeatable switching behavior for billions of voltage pulses and switching times shorter than 50 ns in VO2 thin films.

  16. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  17. Overview and Challenges of Thin Film Solar Electric Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  18. Networking Behavior in Thin Film and Nanostructure Growth Dynamics

    OpenAIRE

    Yuksel, Murat; Karabacak, Tansel; Guclu, Hasan

    2007-01-01

    Thin film coatings have been essential in development of several micro and nano-scale devices. To realize thin film coatings various deposition techniques are employed, each yielding surface morphologies with different characteristics of interest. Therefore, understanding and control of the surface growth is of great interest. In this paper, we devise a novel network-based modeling of the growth dynamics of such thin films and nano-structures. We specifically map dynamic steps taking place du...

  19. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  20. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  1. Applications of thin-film photovoltaics for space

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  2. Thin-Film Photovoltaics: Status and Applications to Space Power

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  3. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  4. Growth and Characterization of Epitaxial Oxide Thin Films

    OpenAIRE

    Garg, Ashish

    2001-01-01

    Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device withi...

  5. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  6. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  7. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  8. Role of asphaltenes in stabilizing thin liquid emulsion films.

    Science.gov (United States)

    Tchoukov, Plamen; Yang, Fan; Xu, Zhenghe; Dabros, Tadeusz; Czarnecki, Jan; Sjöblom, Johan

    2014-03-25

    Drainage kinetics, thickness, and stability of water-in-oil thin liquid emulsion films obtained from asphaltenes, heavy oil (bitumen), and deasphalted heavy oil (maltenes) diluted in toluene are studied. The results show that asphaltenes stabilize thin organic liquid films at much lower concentrations than maltenes and bitumen. The drainage of thin organic liquid films containing asphaltenes is significantly slower than the drainage of the films containing maltenes and bitumen. The films stabilized by asphaltenes are much thicker (40-90 nm) than those stabilized by maltenes (∼10 nm). Such significant variation in the film properties points to different stabilization mechanisms of thin organic liquid films. Apparent aging effects, including gradual increase of film thickness, rigidity of oil/water interface, and formation of submicrometer size aggregates, were observed for thin organic liquid films containing asphaltenes. No aging effects were observed for films containing maltenes and bitumen in toluene. The increasing stability and lower drainage dynamics of asphaltene-containing thin liquid films are attributed to specific ability of asphaltenes to self-assemble and form 3D network in the film. The characteristic length of stable films is well beyond the size of single asphaltene molecules, nanoaggregates, or even clusters of nanoaggregates reported in the literature. Buildup of such 3D structure modifies the rheological properties of the liquid film to be non-Newtonian with yield stress (gel like). Formation of such network structure appears to be responsible for the slower drainage of thin asphaltenes in toluene liquid films. The yield stress of liquid film as small as ∼10(-2) Pa is sufficient to stop the drainage before the film reaches the critical thickness at which film rupture occurs. PMID:24564447

  9. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  10. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  11. Levan nanostructured thin films by MAPLE assembling.

    Science.gov (United States)

    Sima, Felix; Mutlu, Esra Cansever; Eroglu, Mehmet S; Sima, Livia E; Serban, Natalia; Ristoscu, Carmen; Petrescu, Stefana M; Oner, Ebru Toksoy; Mihailescu, Ion N

    2011-06-13

    Synthesis of nanostructured thin films of pure and oxidized levan exopolysaccharide by matrix-assisted pulsed laser evaporation is reported. Solutions of pure exopolysaccharides in dimethyl sulfoxide were frozen in liquid nitrogen to obtain solid cryogenic pellets that have been used as targets in pulsed laser evaporation experiments with a KrF* excimer source. The expulsed material was collected and assembled onto glass slides and Si wafers. The contact angle studies evidenced a higher hydrophilic behavior in the case of oxidized levan structures because of the presence of acidic aldehyde-hydrogen bonds of the coating formed after oxidation. The obtained films preserved the base material composition as confirmed by Fourier transform infrared spectroscopy. They were compact with high specific surface areas, as demonstrated by scanning electron and atomic force microscopy investigations. In vitro colorimetric assays revealed a high potential for cell proliferation for all coatings with certain predominance for oxidized levan. PMID:21520921

  12. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)

    R.Billet

    2004-01-01

    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  13. Modelling the tribology of thin film interfaces

    CERN Document Server

    Zugic, R

    2000-01-01

    substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium molecular dynamics computer simulations. The aim of this work is to deri...

  14. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang

    2005-01-01

    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  15. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  16. Fabrication of Optical Tunable Helical Thin Films

    Institute of Scientific and Technical Information of China (English)

    Linxin Hu; Peng Wang; Xingyang Wan; Shaoji Jiang

    2012-01-01

    Circular polarization selection of light is an important property of helical micro-nanostructure. The helical thin films fabricated by glancing angle deposition can provide both circular polarization selection and wavelength tuning in this work. Their selective transmissions were depicted in calculations and experiments. The wave- length tuning mechanism was revealed as the relationship between peak wavelength and deposition parameters. Therefore, tunable circular polarization components can be designed according to the mechanism mentioned above and fabricated by glancing angle deposition techniques. Potential applications include tunable optical filters, optical pulse-shapers, biosensors etc.

  17. Stable localized patterns in thin liquid films

    Science.gov (United States)

    Deissler, Robert J.; Oron, Alexander

    1992-01-01

    A two-dimensional nonlinear evolution equation is studied which describes the three-dimensional spatiotemporal behavior of the air-liquid interface of a thin liquid film lying on the underside of a cooled horizontal plate. It is shown that the equation has a Liapunov functional, and this fact is exploited to demonstrate that the Marangoni effect can stabilize the destabilizing effect of gravity (the Rayleigh-Taylor instability), allowing for the existence of stable localized axisymmetric solutions for a wide range of parameter values. Various properties of these structures are discussed.

  18. Thin Film Photovoltaics: Markets and Industry

    OpenAIRE

    Arnulf Jäger-Waldau

    2012-01-01

    Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for s...

  19. Optical and Nonlinear Optical Response of Light Sensor Thin Films

    OpenAIRE

    Weisz, S.Z.; O. Resto; Fonseca, F; Fernandez, L. F.E.; Vikhnin, V. S.; O. Vasquez; A. J. Rua; H. Liu

    2005-01-01

    For potential ultrafast optical sensor application, both VO2 thin films and nanocomposite crystal-Si enriched SiO2 thin films grown on fused quartz substrates were successfully prepared using pulsed laser deposition (PLD) and RF co-sputtering techniques. In photoluminescence (PL) measurement c-Si/SiO2 film contains nanoparticles of crystal Si exhibits strong red emission with the band maximum ranging from 580 to 750 nm. With ultrashort pulsed laser excitation all films show extremely intense ...

  20. Capillary instabilities in thin films. II. Kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.

  1. High Tc thin film and device development

    Energy Technology Data Exchange (ETDEWEB)

    Betts, K.; Burbank, M.B.; Cragg, A.; Fife, A.A.; Kubik, P.R.; Lee, S.; Chaklader, A.C.D.; Roemer, G.; Heinrich, B.; Chrzanowski, J.

    1989-03-01

    Thin films of the high Tc superconductor YBa/sub 2/Cu/sub 3/O/sub y/ have been deposited on various substrates by diode and magnetron sputtering using bulk sintered targets. These films have been analyzed by a variety of methods - SEM, X-rays, Electron Beam Microprobe, Mass Spectrometry and Raman Spectroscopy. The stoichiometries of the films have been measured as a function of the radial position from the centre of the sputtered beam at a fixed target-substrate distance. Patterning of the films has been carried out to form planar structures such as strip lines, microbridges and RF SQUIDs. DC current-voltage characteristics of the microbridges were measured as a function of temperature. RF SQUID behaviour has been observed for single loop devices and their properties established at 4.2 K and higher temperatures. Flux locked noise spectra with a 1/f noise power response were recorded in the frequency range 0.01 to approx.100 Hz. RF SQUID signals have been observed for temperatures up to 55 K.

  2. Phase transitions in pure and dilute thin ferromagnetic films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  3. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  4. Calculation of Specific Heat for Aluminium Thin Films

    Institute of Scientific and Technical Information of China (English)

    LU Yao; SONG Qing-Lin; XIA Shan-Hong

    2005-01-01

    @@ We employ Prasher's non-dimensional form to analyse the size effects on specific heat of Al thin films. Compared the calculation results of pure aluminium film with the experimental data, it is found that the reduction of phonon states is not the main reason of the size effect on the specific heat Al thin films with thickness from 10hm to 370nm. However, the Al thin film in air usually has an oxidation layer and the specific heat of the layer is smaller than Al. By including the contribution of the oxidation layer to the thin-film specific heat, the calculation results are much closer to the experimental data. This may be a possible reason of the size effects on specific heat of Al thin films.

  5. CLSM and UV-VIS researches on polyoxadiazoles thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2012-06-01

    Full Text Available Purpose: The purpose of this paper was to analyse the surface morphology and optical properties of polyoxadiazoles thin films.Design/methodology/approach: A few different conducting polymers were dissolved in N-methyl-2-pyrrolid(inone. Then the solutions were deposited on a glass substrate by spin coating method with a different spin rate. Changes in surface topography and optical properties were observed. A confocal laser scanning microscope CLSM Zeiss LSM 5 Exciter has been used. Photos have been taken from area of 120 x 120 microns.Findings: The analysis of images and spectra has confirmed that the quality of thin films depends upon the used polymers. It was also observed that the parameters of the spin coating method have significant effect on the morphology and the optical properties. The spin rate has got a strong impact on them.Research limitations/implications: The morphology and optical properties of polyoxadiazoles thin films has been described. This paper include description how the spin rate influence on the polymer thin films. In order to use a polymer thin film in photovoltaics or optoelectronics it must have a high internal transmission density. Further research of polymer thin films are recommended.Practical implications: The spin coating method allows to deposit a uniform thin films. It is important to know how the spin rate influence on the thin films properties. It is also important to find a new use for this group of material engineering in photovoltaic or optoelectronics devices.Originality/value: The good properties of thin films make them suitable for various applications. The value of this paper is defining the optimal parameters of spin-coating technology for polyoxadiazoles thin films. The results allow the choosing optimal parameters of the deposition process. Spin coating is a very good method to obtain thin films which are obligated to have the same thickness over the whole surface.

  6. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... the promotion of electrons from the valence band of the semiconductor. The photoemission would extend the spectral response of the photovoltaic device. Thus, NPs are placed at the metal/semiconductor interface (in order to exploit the localization characteristic of the LSP enhancement) and are used as active...... the solar cell structure (GaAs, SiO2, Si3N4, AZO/Cr), in order to investigate the LSP resonance and tune it to exploit it below the energy band gap of the semiconductor. EBL is a difficult technique when working by lift-off on critical size (20-50 nm) nanoparticles. The optimization of the process saw...

  7. Optical thin film metrology for optoelectronics

    Science.gov (United States)

    Petrik, Peter

    2012-12-01

    The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.

  8. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  9. Critical misfit of epitaxial growth metallic thin films

    Institute of Scientific and Technical Information of China (English)

    LI Jian-Chen; LIU Wei; JIANG Qing

    2005-01-01

    The critical misfit of epitaxial growth metallic thin films fc was thermodynamically considered. It is found that there exists a competition between the energy of the misfit dislocation of film and non-coherent interface energy of film-substrate. Equilibrium between these energies was present at a critical atomic misfit fc. When the atomic misfit is larger than the critical value, epitaxial growth does not occur. The critical misfit of the epitaxial growth thin films can be predicted. The results show that fc is proportional to the non-coherent interface energy of the film-substrate, and inversely proportional to the elastic modulus and the thickness of the film.

  10. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  11. The preparation and refractive index of BST thin films

    International Nuclear Information System (INIS)

    Radio-frequency magnetron sputtering technique is used to deposit Ba0.65Sr0.35TiO3 (BST) thin films on fused quartz substrates. In order to prepare the high-quality BST thin films, the crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). More intense characteristic diffraction peaks and better crystallization can be observed in BST thin films deposited at 600 deg. C and subsequently annealed at 700 deg. C. The refractive index of the films is determined from the measured transmission spectra. The dependences of the refractive index on the deposition parameters of BST thin films are different. The refractive index of the films increases with the substrate temperature. At lower sputtering pressure, the refractive index increases from 1.797 to 2.197 with pressure increase. However, when the pressure increases up to 3.9 Pa, the refractive index reduces to 1.86. The oxygen to argon ratio also plays an important effect on the refractive index of the films. It has been found that the refractive index increases with increase in the ratio of oxygen to argon. The refractive index of BST thin films is strongly dependent on the annealing temperature, which also increases as the annealing temperature ascends. In a word, the refractive index of BST thin films is finally affected by the films' microstructure and texture

  12. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  13. The NO2 sensing ITO thin films prepared by ultrasonic spray pyrolysis

    OpenAIRE

    Jianzhong Gu; Minghua Lu; Zheng Qin; Minghong Wu; Zheng Jiao

    2003-01-01

    In this paper ITO thin films were deposited on alumina substrates by ultrasonic spray pyrolysis. The NO2 sensing properties of ITO thin films were investigated. The results show ITO thin films have good sensitivity to nitrogen dioxide.

  14. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  15. Vertically aligned biaxially textured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  16. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  17. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  18. Structural And Optical Properties Of VOx Thin Films

    OpenAIRE

    Schneider K.

    2015-01-01

    VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.

  19. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  20. Eutectic bonds on wafer scale by thin film multilayers

    Science.gov (United States)

    Christensen, Carsten; Bouwstra, Siebe

    1996-09-01

    The use of gold based thin film multilayer systems for forming eutectic bonds on wafer scale is investigated and preliminary results will be presented. On polished 4 inch wafers different multilayer systems are developed using thin film techniques and bonded afterwards under reactive atmospheres and different bonding temperatures and forces. Pull tests are performed to extract the bonding strengths.

  1. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    Science.gov (United States)

    Azadi Motlagh, Z.; Azim Araghi, M. E.

    2016-02-01

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32-100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current-voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures.

  2. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    International Nuclear Information System (INIS)

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32–100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current–voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures. (paper)

  3. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  4. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  5. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  6. Physical properties in thin films of iron oxides.

    Energy Technology Data Exchange (ETDEWEB)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Girata, D.; Morales, A. L.; Hoffmann, A.; Materials Science Division; Univ. de Antioquia

    2008-01-01

    We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1

  7. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  8. Preface: Advanced Thin Film Developments and Nano Structures

    Institute of Scientific and Technical Information of China (English)

    Ray Y.Lin

    2005-01-01

    @@ In this special issue, we invited a few leading materials researchers to present topics in thin films, coatings, and nano structures. Readers will find most recent developments in topics, including recent advances in hard, tough, and low friction nanocomposite coatings; thin films for coating nanomaterials; electroless plating of silver thin films on porous Al2O3 substrate; CrN/Nano Cr interlayer coatings; nano-structured carbide derived carbon (CDC) films and their tribology; predicting interdiffusion in high-temperature coatings; gallium-catalyzed silica nanowire growth; and corrosion protection properties of organofunctional silanes. Authors are from both national laboratories and academia.

  9. Peculiarities of spin reorientation in a thin YIG film

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya.B.; Tsymbal, L.T.; Linnik, A.I.; Dan' shin, N.K.; Izotov, A.I.; Wigen, P.E

    2003-05-01

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1 {mu}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  10. Peculiarities of spin reorientation in a thin YIG film.

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya. B.; Tsymbal, L. T.; Linnik, A. I.; Dan' shin, N. K.; Izotov, A. I.; Wigen, P. E.

    2002-06-28

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1{micro}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  11. Electrochemical Intercalation of Sodium into Silicon Thin Film

    Institute of Scientific and Technical Information of China (English)

    Dong-Yeon Kim; Hyo-Jun Ahn; Gyu-Bong Cho; Jong-Seon Kim; Ho-Suk Ryu; Ki-Won Kim; Jou-Hyeon Ahn; Won-Cheol Shin

    2008-01-01

    In order to investigate the possibility of Si thin film as an anode for Na battery, we studied the electrochemical intercalation of sodium into the Si film. Amorphous Si thin film electrode was prepared using DC magnetron sputtering. Sodium ion could intercalate into Si thin film upto Na0.52Si, i.e. 530mAh · g-1-Si. The first discharge capacity was 80mAh.·g-1-Si, which meant reversible amount of sodium intercalation. The discharge capacity slightly decreased to 70mAh · g-1-Si after 10 cycles.

  12. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  13. A versatile platform for magnetostriction measurements in thin films

    Science.gov (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  14. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  15. Mechanism and characters of thin film lubrication at nanometer scale

    Institute of Scientific and Technical Information of China (English)

    雒建斌; 温诗铸

    1996-01-01

    Thin film lubrication is a transition region between elastohydrodynamic lubrication and boundary lubrication, A technique of relative optical interference intensity with the resolution of 0.5 nm in the vertical direction and 1.5 nm in the horizontal direction is used in a pure rolling process to measure the film thickness with different lubricants, speeds, loads and substrate surface energy. Experimental data show that the characteristics of thin film lubrication are different from those of elastohydrodynamic lubrication and boundary lubrication. As the rolling speed decreases, a critical film thickness can be found to distinguish thin film lubrication from elastohydrodynamic lubrication. Such thickness is related to the substrate surface energy, atmospheric viscosity of lubricant, etc. A physical model of thin film lubrication with the fluid layer, the ordered liquid layer and the adsorbed layer is proposed and the functions of these different layers are discussed.

  16. Slippage and Nanorheology of Thin Liquid Polymer Films

    OpenAIRE

    Bäumchen, Oliver; Fetzer, Renate; Klos, Mischa; Lessel, Matthias; Marquant, Ludovic; Hähl, Hendrik; Jacobs, Karin

    2012-01-01

    Thin liquid films on surfaces are part of our everyday life, they serve e.g. as coatings or lubricants. The stability of a thin layer is governed by interfacial forces, described by the effective interface potential, and has been subject of many studies in the last decades. In recent years, the dynamics of thin liquid films came into focus since results on the reduction of the glass transition temperature raised new questions on the behavior of especially polymeric liquids in confined geometr...

  17. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  18. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  19. Production of selective membranes using plasma deposited nanochanneled thin films

    OpenAIRE

    Rodrigo Amorim Motta Carvalho; Alexsander Tressino Carvalho; Maria Lúcia Pereira da Silva; Nicole Raymond Demarquette

    2006-01-01

    The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1) permeation of polar organic compounds and/or water in gaseous phase and 2) permeation of salt in liquid phase. The efficiency of permeation was tested using...

  20. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  1. On the nature of shear thinning in nanoscopically confined films

    OpenAIRE

    Manias, E; Bitsanis, I.; Hadziioannou, G.; Brinke, G. ten

    1996-01-01

    Non-Equilibrium Molecular Dynamics (NEMD) computer simulations were employed to study films in nanometer confinements under shear. Focusing on the response of the viscosity, we found that nearly all the shear thinning takes place inside the solid-oligomer interface and that the adsorbed layers are more viscous than the middle part of the films. Moreover, the shear thinning inside the interfacial area is determined by the wall affinity and is largely insensitive to changes of the film thicknes...

  2. On Ginzburg-Landau Vortices of Superconducting Thin Films

    Institute of Scientific and Technical Information of China (English)

    Shi Jin DING; Qiang DU

    2006-01-01

    In this paper, we discuss the vortex structure of the superconducting thin films placed in a magnetic field. We show that the global minimizer of the functional modelling the superconducting thin films has a bounded number of vortices when the applied magnetic field hex < Hc1 + K log |log ε|where Hc1 is the lower critical field of the film obtained by Ding and Du in SIAM J. Math. Anal.,2002. The locations of the vortices are also given.

  3. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    polymers and measured the current noise in physiological buffer solution for a wide range of different electrode areas. The noise measurements could be modeled by an analytical expression, representing the electrochemical cell as a resistor and capacitor in series. The studies revealed three domains......; for electrodes with low capacitance, the amplifier noise dominated, for electrodes with large capacitances, the noise from the resistance of the electrochemical cell was dominant, while in the intermediate region, the current noise scaled with electrode capacitance. The experimental results and the model......Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  4. Electrochromism: from oxide thin films to devices

    Science.gov (United States)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  5. Transport measurements in overdoped YBCO thin films

    International Nuclear Information System (INIS)

    Temperature dependence of Hall constant RH and longitudinal resistivity ρxx have been measured in Ca-doped YBCO thin films with varying oxygen contents, with emphasis on the overdoped regime. RH vs. T data present a peak near Tc whose height reduces with doping and disappears at optimal doping. Unexpectedly, the peak reappears above optimal doping with a height that increases with doping. A similar behavior was observed in the parameters that fit cot(θH) vs. T to a parabola. They decrease smoothly with increasing doping in the underdoped region and present a peculiar peak in the overdoped region. This behavior might indicate the crossover to a new regime of transport properties in strongly overdoped HTSC. We discuss the possible origin and implications of these results

  6. Surfactant Spreading on Thin Viscous Fluid Films

    Science.gov (United States)

    Bonilla, Caitlyn; Leslie, Nathaniel; Liu, Jeanette; Sinclair, Dina; Levy, Rachel

    2014-11-01

    We examine the spreading of insoluble lipids on a viscous Newtonian thin fluid film. This spreading can be modeled as two coupled nonlinear fourth-order partial differential equations, though inconsistencies between the timescale of experiments and simulations have been reported in recent research. In simulations, we replace traditional models for the equation of state relating surfactant concentration to surface tension with an empirical equation of state. Isotherms collected via a Langmuir-Pockels scale provide data for the equation of state. We compare the timescale of simulation results to measurements of the fluorescently tagged lipid (NBD-PC) spreading as well as the height profile, captured with laser profilometry. Research supported by NSF-DMS-FRG 9068154, RCSA-CCS-19788, HHMI.

  7. Photoluminescence studies in epitaxial CZTSe thin films

    Science.gov (United States)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  8. Structure and Microstructure of Ni-Mn-Ga thin films

    OpenAIRE

    A. Annadurai

    2013-01-01

    Ni-Mn-Ga thin films were dc magnetron sputter deposited onto well cleaned substrates of si(100) and glass in high pure argon atmosphere of pressure of 0.01 mbar using NiMnGa alloy targets prepared in ourlaboratory by vacuum induction melting technique. Pristine thin films were investigated. Crystal structure of the films was studied using x-ray diffraction (XRD) technique. Microstructure of the films was investigated using scanning electron microscope (SEM). XRD reveals that the films on glas...

  9. Fluorine doped vanadium dioxide thin films for smart windows

    Energy Technology Data Exchange (ETDEWEB)

    Kiri, Pragna [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London, WC1H 0AJ (United Kingdom); Warwick, Michael E.A. [UCL Energy Institute, Central House, 14 Upper Woburn Place, London, WC1H 0HY (United Kingdom); Ridley, Ian [Bartlett School of Graduate Studies, University College London, Wates House, 22 Gordon Street, WC1H 0QB, London (United Kingdom); Binions, Russell, E-mail: r.binions@ucl.ac.uk [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London, WC1H 0AJ (United Kingdom)

    2011-12-01

    Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

  10. Structural, electrical and thermoelectrical analysis of nickel sulphide thin films

    Science.gov (United States)

    Chate, P. A.; Sathe, D. J.

    2016-06-01

    A dip method is employed for the deposition of NiS2 thin film at room temperature. Nickel sulphate, succinic acid and thiourea were used as the source materials. The X-ray diffraction analysis shows that the film samples are cubic phase. The specific electrical conductivity of the film was found to be 3.16 × 10-6 (Ω cm)-1. The films show high absorption, and band gap energy value was found to be 1.37 eV. The temperature dependence of an electrical conductivity, thermoelectrical power, carrier density and carrier mobility for NiS2 thin films has been examined.

  11. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C

    2000-01-01

    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  12. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  13. Plasma synthesis of photocatalytic TiO x thin films

    Science.gov (United States)

    Sirghi, L.

    2016-06-01

    The development of efficient photocatalytic materials is promising technology for sustainable and green energy production, fabrication of self-cleaning, bactericidal, and super hydrophilic surfaces, CO2 photoreduction, and decomposition of toxic pollutants in air and water. Semiconductors with good photocatalytic activity have been known for four decades and they are regarded as promising candidates for these new technologies. Low-pressure discharge plasma is one of the most versatile technologies being used for the deposition of photocatalytic semiconductor thin films. This article reviews the main results obtained by the author in using low-pressure plasma for synthesis of TiO x thin films with applications in photocatalysis. Titanium dioxide thin films were obtained by radio frequency magnetron sputtering deposition, plasma enhanced chemical vapour deposition, and high power impulse magnetron sputtering deposition. The effects of the plasma deposition method, plasma parameters, film thickness and substrate on the film structure, chemical composition and photocatalytic activity are investigated. The photocatalytic activity of plasma synthesised TiO x thin films was estimated by UV light induced hydrophilicity. Measurements of photocurrent decay in TiO x thin films in vacuum and air showed that the photocatalytic activity is closely connected to the production, recombination and availability for surface reactions of photo-generated charge carriers. The photocatalytic activity of TiO x thin films was investigated at nanoscale by atomic force microscopy. Microscopic regions of different hydrophilicity on UV light irradiated films are discriminated by AFM atomic force microscopy measurements of adhesion and friction force.

  14. Laser induced vibration of a thin soap film.

    OpenAIRE

    Emile, Olivier; Emile, Janine

    2014-01-01

    We report on the vibration of a thin soap film based on the optical radiation pressure force. The modulated low power laser induces a counter gravity flow in a vertical free standing draining film. The thickness of the soap film is then higher in the upper region than in the lower region of the film. Moreover, the lifetime of the film is dramatically increased by a factor of 2. Since the laser beam only acts mechanically on the film interfaces, such a film can be implemented in an optofluidic...

  15. Nonlinear generation of vorticity in thin smectic films

    CERN Document Server

    Parfenyev, V M; Lebedev, V V

    2015-01-01

    We analyze a solenoidal motion in a vertically vibrated freely suspended thin smectic film. We demonstrate analytically that transverse oscillations of the film generate two-dimensional vortices in the plane of the film owing to hydrodynamic nonlinearity. An explicit expression for the vorticity of the in-plane film motion in terms of the film displacement is obtained. The air around the film is proven to play a crucial role, since it changes the dispersion relation of transverse oscillations and transmits viscous stresses to the film, modifying its bending motion. We propose possible experimental observations enabling to check our predictions.

  16. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad

    2008-11-01

    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  17. Process optimization for the sputter deposition of molybdenum thin films as electrode for AlN thin films

    International Nuclear Information System (INIS)

    Molybdenum thin films have been deposited on Ti/(100) Si substrates by dc sputtering. For process optimization, a design of experiments method was used with three input factors (target power, substrate temperature, and process gas flow). Deposition rate, resistivity, roughness, diffraction angle, and rocking curve width were analyzed as output responses using statistical analysis method. Subsequently, a process allowing the deposition of highly crystalline, smooth, and low resistivity Mo film was selected and tested against film thickness. The as-optimized sputtered molybdenum thin film was used as seeding electrode for the growth of highly c-axis textured AlN film by dc pulsed reactive sputtering

  18. thin films grown with additional NaF layers

    Science.gov (United States)

    Kim, Gee Yeong; Kim, Juran; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-10-01

    CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device.

  19. Plasma polymerised thin films for flexible electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, Mohan V., E-mail: mohan.jacob@jcu.edu.au [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Olsen, Natalie S.; Anderson, Liam J.; Bazaka, Kateryna [Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville 4811 (Australia); Shanks, Robert A. [Applied Sciences, RMIT University, GPO Box 2476V, Melbourne 3001 (Australia)

    2013-11-01

    The significant advancement and growth of organic and flexible electronic applications demand materials with enhanced properties. This paper reports the fabrication of a nonsynthetic polymer thin film using radio frequency plasma polymerisation of 3,7-dimethyl-1,6-octadien-3-ol. The fabricated optically transparent thin film exhibited refractive index of approximately 1.55 at 500 nm and rate of deposition was estimated to be 40 nm/min. The surface morphology and chemical properties of the thin films were also reported in this paper. The optical band gap of the material is around 2.8 eV. The force of adhesion and Young's modulus of the linalool polymer thin films were measured using force-displacement curves obtained from a scanning probe microscope. The friction coefficient of linalool polymer thin films was measured using the nanoscratch test. The calculated Young's modulus increased linearly with increase in input power while the friction coefficient decreased. - Highlights: • Fabrication of a novel polymer thin film from non-synthetic source • The surface, optical and chemical properties are reported. • The fabricated thin film is transparent and smooth. • An environmentally friendly material • Candidate for flexible electronics as dielectric layer or as an encapsulation layer.

  20. Thin film nitinol covered stents: design and animal testing.

    Science.gov (United States)

    Levi, Daniel S; Williams, Ryan J; Liu, Jasen; Danon, Saar; Stepan, Lenka L; Panduranga, Mohanchandra K; Fishbein, Michael C; Carman, Greg P

    2008-01-01

    Interventionalists in many specialties have the need for improved, low profile covered stents. Thin films of nitinol (<5-10 microns) could be used to improve current covered stent technology. A "hot target" sputter deposition technique was used to create thin films of nitinol for this study. Covered stents were created from commercially available balloon-inflatable and self-expanding stents. Stents were deployed in a laboratory flow loop and in four swine. Uncovered stent portions served as controls. Postmortem examinations were performed 2-6 weeks after implantation. In short-term testing, thin film nitinol covered stents deployed in the arterial circulation showed no intimal proliferation and were easily removed from the arterial wall postmortem. Scanning electron microscopy showed a thin layer of endothelial cells on the thin film, which covered the entire film by 3 weeks. By contrast, significant neointimal hyperplasia occurred on the luminal side of stents deployed in the venous circulation. Extremely low-profile covered stents can be manufactured using thin films of nitinol. Although long-term studies are needed, thin film nitinol may allow for the development of low-profile, nonthrombogenic covered stents. PMID:18496269

  1. Thin film thickness measurements using Scanning White Light Interferometry

    International Nuclear Information System (INIS)

    Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb2O5 and ZrO2), a metal-nitride (SiNx:H), a carbon-nitride (SiCxNy:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area. - Highlights: • Capability to make thin film measurements with sub-nanometre accuracy • Measurements of thin film thickness made on metal-oxides, nitrides and carbon-nitrides • Excellent correlation with thickness measurements using spectroscopic ellipsometry • Thin film measurement and nanometrology from the same sample area

  2. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  3. Organic photo detectors for an integrated thin-film spectrometer

    Science.gov (United States)

    Peters, Sabine; Sui, Yunwu; Glöckler, Felix; Lemmer, Uli; Gerken, Martina

    2007-09-01

    We introduce a thin-film spectrometer that is based on the superprism effect in photonic crystals. While the reliable fabrication of two and three dimensional photonic crystals is still a challenge, the realization of one-dimensional photonic crystals as thin-film stacks is a relatively easy and inexpensive approach. Additionally, dispersive thin-film stacks offer the possibility to custom-design the dispersion profile according to the application. The thin-film stack is designed such that light incident at an angle experiences a wavelength-dependent spatial beam shift at the output surface. We propose the monolithic integration of organic photo detectors to register the spatial beam position and thus determine the beam wavelength. This thin-film spectrometer has a size of approximately 5 mm2. We demonstrate that the output position of a laser beam is determined with a resolution of at least 20 μm by the fabricated organic photo detectors. Depending on the design of the thin-film filter the wavelength resolution of the proposed spectrometer is at least 1 nm. Possible applications for the proposed thin-film spectrometer are in the field of absorption spectroscopy, e.g., for gas analysis or biomedical applications.

  4. Thin film thickness measurements using Scanning White Light Interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B.; Kaminski, P.M.; Walls, J.M., E-mail: J.M.Walls@lboro.ac.uk

    2014-01-01

    Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb{sub 2}O{sub 5} and ZrO{sub 2}), a metal-nitride (SiN{sub x}:H), a carbon-nitride (SiC{sub x}N{sub y}:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area. - Highlights: • Capability to make thin film measurements with sub-nanometre accuracy • Measurements of thin film thickness made on metal-oxides, nitrides and carbon-nitrides • Excellent correlation with thickness measurements using spectroscopic ellipsometry • Thin film measurement and nanometrology from the same sample area.

  5. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳

    2015-01-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  6. Optical and Structural Properties of Ultra-thin Gold Films

    CERN Document Server

    Kossoy, Anna; Simakov, Denis; Leosson, Kristjan; Kéna-Cohen, Stéphane; Maier, Stefan A

    2014-01-01

    Realizing laterally continuous ultra-thin gold films on transparent substrates is a challenge of significant technological importance. In the present work, formation of ultra-thin gold films on fused silica is studied, demonstrating how suppression of island formation and reduction of plasmonic absorption can be achieved by treating substrates with (3-mercaptopropyl) trimethoxysilane prior to deposition. Void-free fi lms with deposition thickness as low as 5.4 nm are realized and remain structurally stable at room temperature. Based on detailed structural analysis of the fi lms by specular and diffuse X-ray reflectivity measurements, it is shown that optical transmission properties of continuous ultra-thin films can be accounted for using the bulk dielectric function of gold. However, it is important to take into account the non-abrupt transition zone between the metal and the surrounding dielectrics, which extends through several lattice constants for the laterally continuous ultra-thin films (film thickness...

  7. Nanomechanical behavior of (1 0 0) oriented titanium thin films

    Science.gov (United States)

    Vasu, Kuraganti; Ghanashyam Krishna, Mamidipudi; Padmanabhan, Kuppuswamy Anantha

    2014-03-01

    Titanium thin films were deposited on single crystal Si (3 1 1) and polycrystalline 316 LN nuclear grade stainless steel substrates by RF magnetron sputtering. X-ray diffraction revealed that, irrespective of substrate type, films exhibit preferential growth along the (1 0 0) plane. The microstructure of the films corresponds to the zone-I type in structure zone model on both substrates. The hardness and Young's modulus of the films were extracted from load-displacement curves. The maximum values of hardness and Young's modulus were 12 and 132 GPa respectively for 220 nm thin film on SS substrate. The electrical resistivity data revealed that the films are metallic in nature and the resistivity is lower in the case of the 220 nm thickness film, on both substrates. The observed changes in mechanical and electrical properties can be correlated with variations in the microstructure of Ti films.

  8. Fracture of nanoporous organosilicate thin films

    Science.gov (United States)

    Gage, David Maxwell

    Nanoporous organosilicate thin films are attractive candidates for a number of emerging technologies, ranging from biotechnology to optics and microelectronics. However, integration of these materials is challenged by their fragile nature and susceptibility to mechanical failure. Debonding and cohesive cracking of the organosilicate film are principal concerns that threaten the reliability and yield of device structures. Despite the intense interest in these materials, there is currently a need for greater understanding of the relationship between glass structure and thermomechanical integrity. The objective of this research was to investigate strategies for improving mechanical performance through variations in film chemistry, process conditions, and pore morphology. Several approaches to effecting improvements in elastic and fracture properties were examined in depth, including post-deposition curing, molecular reinforcement using hydrocarbon network groups, and manipulation of pore size and architecture. Detailed structural characterization was employed along with quantitative fracture mechanics based testing methods. It was shown that ultra-violet irradiation and electron bombardment post-deposition treatments can significantly impact glass structure in ways that cannot be achieved through thermal activation alone. Both techniques demonstrated high porogen removal efficiency and enhanced the glass matrix through increased network connectivity and local bond rearrangements. The increases in network connectivity were achieved predominantly through the replacement of terminal groups, particularly methyl and silanol groups, with Si-O network bonds. Nuclear magnetic resonance spectroscopy was shown to be a powerful and quantitative method for gaining new insight into the underlying cure reactions and mechanisms. It was demonstrated that curing leads to significant progressive enhancement of elastic modulus and adhesive fracture energies due to increased network bond

  9. Development of neutron diffuse scattering analysis code by thin film and multilayer film

    International Nuclear Information System (INIS)

    To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering by thin film, roughness of surface of thin film, correlation function, neutron propagation by thin film, diffuse scattering by DWBA theory, measurement model, SDIFFF (neutron diffuse scattering analysis program by thin film) and simulation results are explained. On neutron diffuse scattering by multilayer film, roughness of multilayer film, principle of diffuse scattering, measurement method and simulation examples by MDIFF (neutron diffuse scattering analysis program by multilayer film) are explained. (S.Y.)To research surface structure of thin film and multilayer film by neutron, a neutron diffuse scattering analysis code using DWBA (Distorted-Wave Bron Approximation) principle was developed. Subjects using this code contain the surface and interface properties of solid/solid, solid/liquid, liquid/liquid and gas/liquid, and metal, magnetism and polymer thin film and biomembran. The roughness of surface and interface of substance shows fractal self-similarity and its analytical model is based on DWBA theory by Sinha. The surface and interface properties by diffuse scattering are investigated on the basis of the theoretical model. The calculation values are proved to be agreed with the experimental values. On neutron diffuse scattering

  10. Thin liquid film flow and heat transfer under spray impingement

    International Nuclear Information System (INIS)

    A mathematical model was derived to investigate thin liquid film flow under spray impingement. Based on predicted flow patterns, a heat transfer model was developed to investigate the heat transfer performance in the non-boiling regime of spray cooling. The film thickness predicted by the thin film flow model favourably compares with reported experimental results obtained at different measurement locations and nozzle inlet pressures. It is found that the film thickness is sensitive to droplet flux distribution but not the nozzle inlet pressure. The comparison of the heated surface temperature between the proposed heat transfer model and the published experimental data shows good agreement. - Highlights: ► Thin liquid film flow in spray cooling is theoretically studied. ► A thin liquid film flow model is derived to predict the thin film flow pattern under spray impingement. ► A heat transfer model is developed to predict the heat transfer performance in the non-boiling regime of spray cooling. ► Film thickness of the liquid film flow is sensitive to droplet flux distribution but not the nozzle inlet pressure. ► Droplet impingement cooling is the primary cooling mechanism in the non-boiling regime of spray cooling.

  11. Buckling of Thin Films in Nano-Scale

    Science.gov (United States)

    Wang, S.; Jia, H. K.; Sun, J.; Ren, X. N.; Li, L. A.

    2010-06-01

    Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  12. Buckling of Thin Films in Nano-Scale

    Directory of Open Access Journals (Sweden)

    Li L.A.

    2010-06-01

    Full Text Available Investigation of thin film buckling is important for life prediction of MEMS device which are damaged mainly by the delamination and buckling of thin films. In this paper the mechanical and thermal properties of compressed thin film titanium films with 150 nm thickness deposited on an organic glass substrate under mechanical and thermal loads were measured and characterized. In order to simulate the thin films which subjected to compound loads and the buckle modes the external uniaxial compression and thermal loading were subjected to the specimen by the symmetric loading device and the electrical film in this experiment. The temperature of the thin film deposited on substrate was measured using thermoelectric couple. The range of temperature accords with the temperature range of the MEMS. It is found that the size and number of the delamination and buckling of the film are depended upon the pre-fixed mechanical loading and thermal temperature. The thermal transient conduction and thermal stability of the film and substrate was studied with finite element method.

  13. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    OpenAIRE

    Sun, Jie; Sun, Yingchun

    2007-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization a...

  14. Nonlinear absorption of ultrashort laser pulses in thin metal films

    OpenAIRE

    Manfredi, Giovanni; Hervieux, Paul-Antoine

    2005-01-01

    Self-consistent simulations of the ultrafast electron dynamics in thin metal films are performed. A regime of nonlinear oscillations is observed, which corresponds to ballistic electrons bouncing back and forth against the film surfaces. When an oscillatory laser field is applied to the film, the field energy is partially absorbed by the electron gas. Maximum absorption occurs when the period of the external field matches the period of the nonlinear oscillations, which, for sodium films, lies...

  15. Electro-optical Properties of Ultra-Thin Organic Films

    OpenAIRE

    Hodges, Ping Y.

    2001-01-01

    Electro-optical properties of thin film are of great interest owing to the perpetual demand for miniaturization and higher speed devices for communication, electronic, and biomedical applications. The thickness of polymer films developed for these applications has decreased dramatically making interfacial effects significant. It is well documented that, in submicron thickness range, both film/substrate & film/air interface are critical. In this study, we probe the dynamics of electro-optic...

  16. Nonlinear optical properties of Au/PVP composite thin films

    Institute of Scientific and Technical Information of China (English)

    Shen Hong; Cheng Bo-Lin; Lu Guo-Wei; Wang Wei-Tian; Guan Dong-Yi; Chen Zheng-Hao; Yang Guo-Zhen

    2005-01-01

    Colloidal Au and poly(vinylpyrrolidone) (PVP) composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of films.

  17. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  18. Residual stress in spin-cast polyurethane thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hong; Zhang, Li, E-mail: lizhang@mae.cuhk.edu.hk [Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China); Chow Yuk Ho Technology Centre for Innovative Medicine, The Chinese University of Hong Kong, Shatin N.T., Hong Kong (China)

    2015-01-19

    Residual stress is inevitable during spin-casting. Herein, we report a straightforward method to evaluate the residual stress in as-cast polyurethane thin films using area shrinkage measurement of films in floating state, which shows that the residual stress is independent of radial location on the substrate and decreased with decreasing film thickness below a critical value. We demonstrate that the residual stress is developed due to the solvent evaporation after vitrification during spin-casting and the polymer chains in thin films may undergo vitrification at an increased concentration. The buildup of residual stress in spin-cast polymer films provides an insight into the size effects on the nature of polymer thin films.

  19. Electrochromic properties of nanocrystalline MoO3 thin films

    International Nuclear Information System (INIS)

    Electrochromic MoO3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO3 thin films. The effects of annealing temperatures ranging from 100 oC to 500 oC were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO4/propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO3 thin films heat-treated at 350 oC varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

  20. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo

    2011-01-01

    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  1. Preparation and superconductivity of iron selenide thin films

    OpenAIRE

    Han, Y.; Li, W. Y.; Cao, L. X.; S. Zhang; Xu, B; Zhao, B. R.

    2009-01-01

    FeSex (x = 0.80, 0.84, 0.88, 0.92) thin films were prepared on SrTiO3(001) (STO), (La,Sr)(Al,Ta)O3(001) (LSAT), and LaAlO3(001) (LAO) substrates by pulsed laser deposition method. All thin films show single-phase and c-axis oriented epitaxial growth, and are superconducting. Among them, the FeSe0.88 thin films show Tc, onset of 11.8 K and Tc, 0 of 3.4 K. The upper critical magnetic field is estimated to be 14.0 T.

  2. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  3. Double Laser for Depth Measurement of Thin Films of Ice.

    Science.gov (United States)

    Beltrán, Manuel Domingo; Molina, Ramón Luna; Aznar, Miguel Ángel Satorre; Moltó, Carmina Santonja; Verdú, Carlos Millán

    2015-01-01

    The use of thin films is extensive in both science and industry. We have created an experimental system that allows us to measure the thicknesses of thin films (with typical thicknesses of around 1 µm) in real time without the need for any prior knowledge or parameters. Using the proposed system, we can also measure the refractive index of the thin film material exactly under the same experimental conditions. We have also obtained interesting results with regard to structural changes in the solid substance with changing temperature and have observed the corresponding behavior of mixtures of substances. PMID:26426024

  4. Hydrogenation Effect on Mg/Co Multilayer Thin Films

    OpenAIRE

    M.K. Jangid; S.P. NEHRA, M.SINGH

    2010-01-01

    Multilayer Mg/Co thin films have been prepared using thermal evaporation method at pressure 10-5torr. Annealing of structure has been performed in atmospheric condition at 600 K constant temperature for one hour. Hydrogenation of annealed thin films has been performed by keeping these in hydrogenation cell at different hydrogen pressures for 30 min. The UV–VIS absorption spectra of thin films have been carried out at room temperature in the wavelength range of 300–800 nm. The optical band gap...

  5. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  6. Light management in thin-film silicon solar cells

    OpenAIRE

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved with silicon-based solar cells. To stay competitive with bulk crystalline silicon and other thin-film solar cell technologies, thin-film silicon solar cells have to achieve a conversion efficiency l...

  7. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  8. Organic nanostructured thin film devices and coatings for clean energy

    CERN Document Server

    Zhang, Sam

    2010-01-01

    Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films and coatings, while the third volume explores the cutting-edge organic nanostructured devices used to produce clean energy. This third volume, Organic Nanostructured Thin Film Devices and Coatings for Clean Energy, addresses various aspects of the proc

  9. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  10. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  11. Fluorescent thin gel films using organic dyes and pigments

    Science.gov (United States)

    Nakazumi, Hiroyuki; Takashi, Tarao; Taniguchi, Shin-ichi; Nanto, Hidehito

    1997-10-01

    New organic-inorganic fluorescent thin gel films included with laser dyes or fluorescent organic pigments have been prepared for display application. The florescent dyes (benzoxazolium, pyrromethene, and rhodamine dyes) and super-fine particles of fluorescent pigments (coumarin and perylene) were successfully incorporated into thin silicate gel films prepared from tetraethoxysilane (TEOS), methyltriethoxysilane (MTES), and methoxysilane oligomer (MTSO) under acid catalyzed hydrolysis. The blue, green, and red luminescence were observed from these thin films (thickness: 100 - 400 nm), respectively. Fluorescence spectra, fluorescent quantum yield and lifetime of thin gel films are examined. Fluorescent peaks for most of dyes and pigments used in gel films were similar to those in solution, and fluorescent lifetime for dyes and pigments used in gel films were 2.9 - 4.5 ns. Photostability of fluorescent gel films is dependent on fluorescent organic dyes and pigments used and/or silicate gel matrixes. Coumarin and perylene pigments have higher fluorescent quantum yield in gel film prepared from MTSO. The large Stokes shift was observed in fluorescent gel film using coumarin and benzoxazolium dyes. The coumarin and perylene pigments are significantly photo- stable in gel film prepared from MTSO, and photodegradation of perylene red after irradiation of 500 W Xi-lamp for 30 min is below 20%.

  12. Process compilation methods for thin film devices

    Science.gov (United States)

    Zaman, Mohammed Hasanuz

    This doctoral thesis presents the development of a systematic method of automatic generation of fabrication processes (or process flows) for thin film devices starting from schematics of the device structures. This new top-down design methodology combines formal mathematical flow construction methods with a set of library-specific available resources to generate flows compatible with a particular laboratory. Because this methodology combines laboratory resource libraries with a logical description of thin film device structure and generates a set of sequential fabrication processing instructions, this procedure is referred to as process compilation, in analogy to the procedure used for compilation of computer programs. Basically, the method developed uses a partially ordered set (poset) representation of the final device structure which describes the order between its various components expressed in the form of a directed graph. Each of these components are essentially fabricated "one at a time" in a sequential fashion. If the directed graph is acyclic, the sequence in which these components are fabricated is determined from the poset linear extensions, and the component sequence is finally expanded into the corresponding process flow. This graph-theoretic process flow construction method is powerful enough to formally prove the existence and multiplicity of flows thus creating a design space {cal D} suitable for optimization. The cardinality Vert{cal D}Vert for a device with N components can be large with a worst case Vert{cal D}Vert≤(N-1)! yielding in general a combinatorial explosion of solutions. The number of solutions is hence controlled through a-priori estimates of Vert{cal D}Vert and condensation (i.e., reduction) of the device component graph. The mathematical method has been implemented in a set of algorithms that are parts of the software tool MISTIC (Michigan Synthesis Tools for Integrated Circuits). MISTIC is a planar process compiler that generates

  13. Soft Magnetic Multilayered Thin Films for HF Applications

    Science.gov (United States)

    Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

    Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.

  14. Chemical analysis of thin films at Sandia National Laboratories

    International Nuclear Information System (INIS)

    The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P2O5:SiO2, B2O3:SiO2, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO2 films

  15. Production of nickel oxide thin films by magnetron sputtering

    International Nuclear Information System (INIS)

    Discrepancies between short-circuit diffusion data derived from nickel oxide bicrystals and specimens produced by the oxidation of nickel has led to a requirement for thin film nickel oxide specimens of controlled microstructure and impurity level that can be produced independently of the oxidation process. RF magnetron sputtering of nickel oxide has been used to produce thin films intended for this application. The as-deposited films contain excess oxygen compared to stoichiometric nickel oxide and exhibit strong preferred orientation. Annealing in argon leads to oxygen deficient films. The reduction in porosity which accompanies the annealing leads to the formation of through-thickness cracks in the films. Subsequent oxygen tracer studies demonstrate that the cracks give rise to excessive oxygen transport through the films compared to that expected for thermally oxidised scales. The microstructural anomalies produced by the annealing process mean that the required microstructures were not achieved and these films are not useful analogues of thermal nickel oxide scales. (author)

  16. Structure and Microstructure of Ni-Mn-Ga thin films

    Directory of Open Access Journals (Sweden)

    A.Annadurai

    2013-04-01

    Full Text Available Ni-Mn-Ga thin films were dc magnetron sputter deposited onto well cleaned substrates of si(100 and glass in high pure argon atmosphere of pressure of 0.01 mbar using NiMnGa alloy targets prepared in ourlaboratory by vacuum induction melting technique. Pristine thin films were investigated. Crystal structure of the films was studied using x-ray diffraction (XRD technique. Microstructure of the films was investigated using scanning electron microscope (SEM. XRD reveals that the films on glass substrates are amorphous and films on si(100 substrates posses L21 structure. SEM microstructure shows that the films on si(100 are polycrystalline in pristine form.

  17. Light waves in thin films and integrated optics.

    Science.gov (United States)

    Tien, P K

    1971-11-01

    Integrated optics is a far-reaching attempt to apply thin-film technology to optical circuits and devices, and, by using methods of integrated circuitry, to achieve a better and more economical optical system. The specific topics discussed here are physics of light waves in thin films, materials and losses involved, methods of couplings light beam into and out of a thin film, and nonlinear interactions in waveguide structures. The purpose of this paper is to review in some detail the important development of this new and fascinating field, and to caution the reader that the technology involved is difficult because of the smallness and perfection demanded by thin-film optical devices.

  18. Investigation on guided wave dispersion characteristics for metal thin films

    International Nuclear Information System (INIS)

    In this study, we investigated the dispersion characteristics of guided waves in thin films. Dispersion curves are essential for understanding not only the behavior of ultrasonic waves, but also the mechanical properties of thin films. Matrix techniques are presented for modeling ultrasonic waves in multilayered structures before being used to calculate the dispersion curves for Al-steel and Al-composite specimens. When compared with the dispersion curves obtained using the commercial program (Disperse), the dispersion curves generated from the transfer matrix method show its validity. These developed methods are used to obtain dispersion curves for Al thin films deposited on a Si substrate. The resulting dispersion curves enable observation of both dispersive and non-dispersive behavior for the guided waves, depending on the thickness of the thin films.

  19. Rip-Stop Reinforced Thin Film Sun Shield Structure Project

    Data.gov (United States)

    National Aeronautics and Space Administration — During a proposed Phase I and Phase II program, PSI will advance the TRL from 3 to 6 for the ripstop reinforcement of thin film membranes used for large deployable...

  20. Mechanism of spontaneous hole formation in thin polymeric films

    DEFF Research Database (Denmark)

    Yu, Kaijia; Rasmussen, Henrik K.; Román Marín, José Manuel;

    2012-01-01

    We show computationally that (molten) thin polymeric film containing nonequilibrium configurations originating from a solvent evaporation may develop holes spontaneously in the molten state, and that they appear delayed. Polymers above the glass transition temperature are liquids where the flow...

  1. Hydrogenation Effect on Mg/Co Multilayer Thin Films

    Directory of Open Access Journals (Sweden)

    M. K. JANGID

    2010-11-01

    Full Text Available Multilayer Mg/Co thin films have been prepared using thermal evaporation method at pressure 10-5torr. Annealing of structure has been performed in atmospheric condition at 600 K constant temperature for one hour. Hydrogenation of annealed thin films has been performed by keeping these in hydrogenation cell at different hydrogen pressures for 30 min. The UV–VIS absorption spectra of thin films have been carried out at room temperature in the wavelength range of 300–800 nm. The optical band gap was found to be increase and conductivity has been found to be decreased with hydrogen pressure. The relative resistivity varies nonlinearly with time and increases with hydrogen pressure. Raman spectra of these sample shows decreasing intensity of peaks with hydrogenation. These results suggested that multilayer Mg/Co thin films structures can be used for hydrogen storage as well as solar collector materials.

  2. Chalcogenide thin film materials for next generation data storage

    OpenAIRE

    Simpson, Robert E.

    2008-01-01

    Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. Commonly Ge. Therefore Ga:La:S:Cu shows potential as a future electrical phase change data storage material.

  3. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  4. On-Chip Sensing of Thermoelectric Thin Film's Merit.

    Science.gov (United States)

    Xiao, Zhigang; Zhu, Xiaoshan

    2015-01-01

    Thermoelectric thin films have been widely explored for thermal-to-electrical energy conversion or solid-state cooling, because they can remove heat from integrated circuit (IC) chips or micro-electromechanical systems (MEMS) devices without involving any moving mechanical parts. In this paper, we report using silicon diode-based temperature sensors and specific thermoelectric devices to characterize the merit of thermoelectric thin films. The silicon diode temperature sensors and thermoelectric devices were fabricated using microfabrication techniques. Specifically, e-beam evaporation was used to grow the thermoelectric thin film of Sb2Te3 (100 nm thick). The Seebeck coefficient and the merit of the Sb2Te3 thin film were measured or determined. The fabrication of silicon diode temperature sensors and thermoelectric devices are compatible with the integrated circuit fabrication. PMID:26193272

  5. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  6. Stress in Thin Films; Diffraction Elastic Constants and Grain Interaction

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Untextured bulk polycrystals usually possess macroscopically isotropic elastic properties whereas for most thin films transverse isotropy is expected, owing to the limited dimensionality. The usually applied models for the calculation of elastic constants of polycrystals from single crystal elastic constants (so-called grain interaction models) erroneously predict macroscopic isotropy for an (untextured) thin film. This paper presents a summary of recent work where it has been demonstrated for the first time by X-ray diffraction analysis of stresses in thin films that elastic grain interaction can lead to macroscopically elastically anisotropic behaviour (shown by non-linear sin2ψ plots). A new grain interaction model, predicting the macroscopically anisotropic behaviour of thin films, is proposed.

  7. Thermal surface wave technique for thin film thermal diffusivity measurement

    OpenAIRE

    Zhang, B.; Imhof, R.; Hartree, W.

    1994-01-01

    A new method of measuring thermal diffusivities of isolated thin films, using variable transverse displacement between focused, modulated optical excitation and radiometric detection, with measurements on metal and plastic foils, is presented.

  8. Drop impact on thin liquid films using TIRM

    Science.gov (United States)

    Pack, Min; Ying Sun Team

    2015-11-01

    Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

  9. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  10. Characterization of thin films with synchrotron radiation in SPring-8

    International Nuclear Information System (INIS)

    Many studies about thin films by using synchrotron radiation in SPring-8 were reviewed. Structural analyses and assessment of thin films used for electronics, and also assessment of insulating films for the gate used in LSI were carried out. Film thickness, unevenness, and density of SiO2 films in order of nanomer thickness were determined by interference fringes of x-ray reflection curves. The interface structure of (SiO2/Si) films was studied by x-ray crystal truncation rod scattering, and the correlation between leakage character depending on nitrogen concentration and interface structure was clarified on SiON film. The oxygen concentration in HfO films in nanometer thickness was determined by x-ray fluorescence analysis, and the interface reaction for HfO2/SiO2 was clearly observed by electron spectroscopy. The structure of amorphous thin films with large dielectric constant was analyzed by x-ray absorption fine structure (XAFS) spectrum. Devices fabricated from multi-layer films showing giant magnetic resistance were developed for hard disk with a large memory. The character of giant magnetic resistance was governed by multi-layer thin film structure piled up by magnetic and nonmagnetic polycrystalline thin metals. For the multi-layer structure, the concentration distribution of constituent elements was determined to the direction of film thickness by x-ray reflection analysis and grazing incident x-ray fluorescence analysis. In the semiconductor laser source, Ga1-xInxN, used for DVD, the local structure around In ions was studied by XAFS since constituent instability, especially overpopulation of In element, caused the deterioration of lifetime and light emission of the laser. The lattice constant of the light emission layer in InGaAs was measured by x-ray micro-beams. (author)

  11. Thin films of xyloglucans for BSA adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Jo, T.A. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Petri, D.F.S. [Institute of Chemistry, University of Sao Paulo, Sao Paulo, SP (Brazil); Valenga, F. [Department of Biochemistry and Molecular Biology, Federal University of Parana, Curitiba, PR (Brazil); Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Lucyszyn, N. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil); Sierakowski, M.-R. [Laboratory of Biopolymers, Department of Chemistry, Federal University of Parana, Curitiba, PR (Brazil)], E-mail: mariarita.sierakowski@ufpr.br

    2009-03-01

    In this work, XG extracted from Tamarindus indica (XGT) and Copaifera langsdorffii (XGC) seeds were deposited onto Si wafers as thin films. The characteristics of XGT and XGC adsorbed layers were compared with a commercial XG sample (TKP, Tamarind kernel powder) by ellipsometry and atomic force microscopy (AFM). Moreover, the adsorption of oxidized derivative of XGT (To60) onto amino-terminated Si wafers and the immobilization of bovine serum albumin (BSA) onto polysaccharides covered wafers, as a function of pH, were also investigated. The XG samples presented molar ratios Glc:Xyl:Gal of 2.4:2.1:1 (XGC); 2.8: 2.3: 1 (XGT) and 1.9:1.9:1 (TKP). The structure of XGT and XGC was determined by O-methy alditol acetate derivatization and showed similar features, but XGC confirmed the presence of more {alpha}-D-Xyl branches due to more {beta}-D-Gal ends. XGT deposited onto Si adsorbed as fibers and small entities uniformly distributed, as evidenced by AFM, while TPK and XGC formed larger aggregates. The thickness of To60 onto amino-terminated surface was similar to that determined for XGT onto Si wafers. A maximum in the adsorbed amount of BSA occurred close to its isoelectric point (5.5). These findings indicate that XGT and To60 are potential materials for the development of biomaterials and biotechnological devices.

  12. Degradation analysis of thin film photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C., E-mail: chantelle.radue@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (P{sub MAX}) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 approx30% and a total degradation of approx42%. For Si-2 the initial P{sub MAX} was 7.93 W, with initial light-induced degradation of approx10% and a total degradation of approx17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  13. Thin wetting film lens-less imaging

    International Nuclear Information System (INIS)

    Lens-less imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E. coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm2 to 12 mm2 to 24 mm2, which allows the detection of bacteria contained in 0.5 μl to 4 μl to 10 μl, respectively. (authors)

  14. Degradation analysis of thin film photovoltaic modules

    International Nuclear Information System (INIS)

    Five thin film photovoltaic modules were deployed outdoors under open circuit conditions after a thorough indoor evaluation. Two technology types were investigated: amorphous silicon (a-Si:H) and copper indium gallium diselenide (CIGS). Two 14 W a-Si:H modules, labelled Si-1 and Si-2, were investigated. Both exhibited degradation, initially due to the well-known light-induced degradation described by Staebler and Wronski [Applied Physics Letters 31 (4) (1977) 292], and thereafter due to other degradation modes such as cell degradation. The various degradation modes contributing to the degradation of the a-Si:H modules will be discussed. The initial maximum power output (PMAX) of Si-1 was 9.92 W, with the initial light-induced degradation for Si-1 ∼30% and a total degradation of ∼42%. For Si-2 the initial PMAX was 7.93 W, with initial light-induced degradation of ∼10% and a total degradation of ∼17%. Three CIGS modules were investigated: two 20 W modules labelled CIGS-1 and CIGS-2, and a 40 W module labelled CIGS-3. CIGS-2 exhibited stable performance while CIGS-1 and CIGS-3 exhibited degradation. CIGS is known to be stable over long periods of time, and thus the possible reasons for the degradation of the two modules are discussed.

  15. Thin Film Photovoltaics: Markets and Industry

    Directory of Open Access Journals (Sweden)

    Arnulf Jäger-Waldau

    2012-01-01

    Full Text Available Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for solar modules. Prices for photovoltaic electricity generation systems have more than halved over the last five years making the technology affordable to an ever-increasing number of customers worldwide. With worldwide over 60 GW cumulative installed photovoltaic electricity generation capacity installed in November 2011, photovoltaics still is a small contributor to the electricity supply, and another 10 to 15 years of sustained and aggressive growth will be required for photovoltaic solar electricity to become one of the main providers of electricity. To achieve this, a continuous improvement of the current solar cell technologies will be necessary.

  16. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  17. Electrophysical Properties of Nanocrysyalline Platinum Thin Films

    Directory of Open Access Journals (Sweden)

    K.V. Tyschenko

    2013-03-01

    Full Text Available The results of research structural and phase state, termoresistive properties (resistivity, temperature coefficient of resistance (TCR in the range of temperature ΔТа = 300-630 К and tensoresistive properties (gauge factor in the range of deformation Δεl1 = (0-1 %, Δεl2 = (0-2 % were presented. Thin films Pt have fcc structure with lattice parameter ā = 0,390 nm after condensation and annealing. The temperature dependences characterized by relatively large value of resistivity (ρ ~ 10 – 7 Ohm·m and relatively small value of TCR (β ~ 10 – 4 K – 1 respectively. Strain properties characterized by a wide interval of elastic deformation (more than 1 %. The deformation coefficient of electron mean free path (λ0 ηλ0l ≈ 9 and changing electron mean free path Δλ0 ≈ = 2 nm were calculated.

  18. Structural And Optical Properties Of VOx Thin Films

    Directory of Open Access Journals (Sweden)

    Schneider K.

    2015-06-01

    Full Text Available VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.

  19. Linear Microbolometric Array Based on VOx Thin Film

    Science.gov (United States)

    Chen, Xi-Qu

    2010-05-01

    In this paper, a linear microbolometric array based on VOx thin film is proposed. The linear microbolometric array is fabricated by using micromachining technology, and its thermo-sensitive VOx thin film has excellent infrared response spectrum and TCR characteristics. Integrated with CMOS circuit, an experimentally prototypical monolithic linear microbolometric array is designed and fabricated. The testing results of the experimental linear array show that the responsivity of linear array can approach 18KV/W and is potential for infrared image systems.

  20. X-Ray Diffraction Determination of Stresses in Thin Films

    OpenAIRE

    Vreeland, T.; Dommann, A.; Tsai, C.-J.; Nicolet, M-A.

    1988-01-01

    This paper presents the methodology employed in the determination of the stress tensor for thin crystalline films using x-ray rocking curves. Use of the same equipment for the determination of the average stress in poly- or non-crystalline thin films attached to a crystalline substrate is also discussed. In this case the lattice curvature of the substrate is determined by measurement of the shift In the Bragg peak with lateral position in the substrate. Strains in single crystal layers may...

  1. Form Birefringence in Thin Films with Oblique Columnar Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Jian-Guo; SHAO Jian-Da; WANG Su-Mei; HE Hong-Bo; FAN Zheng-Xiu

    2005-01-01

    @@ Effective medium theory is useful for designing optical elements with form birefringent subwavelength structures. Thinfilms fabricated by oblique deposition are similar to the two-dimensional surface relief subwavelength gratings. We use the effective medium theory to calculate the anisotropic optical properties of the thin films with oblique columnar structures. The effective refractive indices and the directions are calculated from effective medium theory. It is shown that optical thin films with predetermined refractive indices and birefringence may be engineered.

  2. Quartz crystal microbalance thin-film dissolution rate monitor

    Science.gov (United States)

    Hinsberg, William D.; Kanazawa, Kay K.

    1989-03-01

    We describe the details of construction and operation of an instrument useful for the characterization of dissolution kinetics of thin films. This device, based on a quartz crystal microbalance operating in contact with a liquid, avoids the limitations associated with the use of optical, electrical, and mechanical dissolution rate measurement techniques. The QCM rate monitor has general application to the measurement of the kinetics of dissolution of transparent and opaque thin films such as dielectrics, metals, and polymeric resists.

  3. Synthesizing skyrmion bound pairs in Fe-Gd thin films

    Science.gov (United States)

    Lee, J. C. T.; Chess, J. J.; Montoya, S. A.; Shi, X.; Tamura, N.; Mishra, S. K.; Fischer, P.; McMorran, B. J.; Sinha, S. K.; Fullerton, E. E.; Kevan, S. D.; Roy, S.

    2016-07-01

    We show that properly engineered amorphous Fe-Gd alloy thin films with perpendicular magnetic anisotropy exhibit bound pairs of like-polarity, opposite helicity skyrmions at room temperature. Magnetic mirror symmetry planes present in the stripe phase, instead of chiral exchange, determine the internal skyrmion structure and the net achirality of the skyrmion phase. Our study shows that stripe domain engineering in amorphous alloy thin films may enable the creation of skyrmion phases with technologically desirable properties.

  4. Recent technological advances in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  5. A Memadmittance Systems Model for Thin Film Memory Materials

    OpenAIRE

    Mouttet, Blaise

    2010-01-01

    In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance switching behavior of TiO(2-x) thin films. However, a variety of other thin film materials exhibiting memory resistance effects have also been found to exhibit a memory capacitance effect. This paper proposes a memadmittance (memory admittance) systems model which ...

  6. Scanned probe microscopy for thin film superconductor development

    Energy Technology Data Exchange (ETDEWEB)

    Moreland, J. [National Institute of Standards and Technology, Boulder, CO (United States)

    1996-12-31

    Scanned probe microscopy is a general term encompassing the science of imaging based on piezoelectric driven probes for measuring local changes in nanoscale properties of materials and devices. Techniques like scanning tunneling microscopy, atomic force microscopy, and scanning potentiometry are becoming common tools in the production and development labs in the semiconductor industry. The author presents several examples of applications specific to the development of high temperature superconducting thin films and thin-film devices.

  7. Research and developments in thin film silicon photovoltaics

    OpenAIRE

    Despeisse, M; Ballif, C.; Feltrin, A.; Meillaud, F.; Fay, S.; F.-J. Haug, F.-J.; Dominé, D.; Python, M.; Soderstrom, T.; Buehlmann, P; Bugnon, G.; Parascandolo, G

    2009-01-01

    The increasing demand for photovoltaic devices and the associated crystalline silicon feedstock demand scenario have led in the past years to the fast growth of the thin film silicon industry. The high potential for cost reduction and the suitability for building integration have initiated both industrial and research laboratories dynamisms for amorphous silicon and micro-crystalline silicon based photovoltaic technologies. The recent progress towards higher efficiencies thin film silicon sol...

  8. UV imprinting for thin film solar cell application

    Science.gov (United States)

    Escarré, J.; Battaglia, C.; Söderström, K.; Pahud, C.; Biron, R.; Cubero, O.; Haug, F.-J.; Ballif, C.

    2012-02-01

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures.

  9. UV imprinting for thin film solar cell application

    OpenAIRE

    Escarre, J; Battaglia, C; Soederstroem, K.; Pahud, C.; Biron, R.; Cubero, O.; Haug, F.-J.; Ballif, C.

    2012-01-01

    UV imprinting is an interesting, low cost technique to produce large area thin film solar cells incorporating nanometric textures. Here, we review and present new results confirming that replicas of the most common textures used in photovoltaics can be obtained by UV imprinting with an excellent fidelity. The use of these replicas as substrates for amorphous and micromorph thin film silicon solar cells is also shown, together with a comparison with devices obtained on the original textures.

  10. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  11. Dewetting of thin films on heterogeneous substrates: Pinning vs. coarsening

    OpenAIRE

    Brusch, Lutz; Kuehne, Heiko; Thiele, Uwe; Baer, Markus

    2001-01-01

    We study a model for a thin liquid film dewetting from a periodic heterogeneous substrate (template). The amplitude and periodicity of a striped template heterogeneity necessary to obtain a stable periodic stripe pattern, i.e. pinning, are computed. This requires a stabilization of the longitudinal and transversal modes driving the typical coarsening dynamics during dewetting of a thin film on a homogeneous substrate. If the heterogeneity has a larger spatial period than the critical dewettin...

  12. Proton conductivity enhancement in oriented, sulfonated polyimide thin films

    OpenAIRE

    Krishnan, Karthik; Iwatsuki, Hiroko; Hara, Mitsuo; Nagano, Shusaku; Nagao, Yuki

    2014-01-01

    Studies of proton transport in confined thin polymer electrolytes are essential for providing additional information regarding the structure-property relationships of such materials. Using a combination of proton transport measurements and structural characterization, we explored the effect of proton conductivity in sulfonated polyimide (SPI) under both bulk and nanostructured thin film systems. SPI film confined to a thickness of approximately 530 nm shows significant proton conductivity enh...

  13. Nonlinear Absorption Properties of nc-Si:H Thin Films

    Institute of Scientific and Technical Information of China (English)

    GUO Zhenning; GUO Hengqun; LI Shichen; HUANG Yongzhen; WANG Qiming

    2001-01-01

    It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.

  14. Spreading of molecularly thin wetting films on solid interfaces

    OpenAIRE

    Burlatsky, S. F.; Cazabat, A. M.; Moreau, M.; Oshanin, G.; Villette, S.

    1996-01-01

    In this paper we study kinetics of spreading of thin liquid films on solid interfaces. We present an overview of current experimental picture and discuss available theoretical approaches and their limitations. We report some new experimental results on spreading of molecularly thin liquid films and propose an analytically solvable microscopic model, which reproduces experimentally observed behaviors and provides a seemingly plausible explanation of the underlying physical processes.

  15. Polycrystalline thin-film solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  16. Polycrystalline thin-film solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  17. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  18. Luminescence and physical properties of copper doped CdO derived nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Benhaliliba, M., E-mail: bmost_31@yahoo.fr [Physics Department, Sciences Faculty, Oran University of Sciences and Technology USTOMB, BP1505 Oran (Algeria); Benouis, C.E. [Physics Department, Sciences Faculty, Oran University of Sciences and Technology USTOMB, BP1505 Oran (Algeria); Tiburcio-Silver, A. [ITT-DIEE, Apdo, Postal 20, Metepec 3, 52176, Estado de Mexico (Mexico); Yakuphanoglu, F. [Firat University, Physics Department, Faculty of Sciences and Arts, 23119, Elazig (Turkey); Avila-Garcia, A.; Tavira, A. [Cinvestav-IPN, Departamento de Ingenieria Electrica-SEES, Apdo. postal 14-740, 07000 Mexico, D.F. (Mexico); Trujillo, R.R. [Centro de Investigacion en Dispositivos Semiconductores-BUAP 14 Sur y Av. San Claudio, C.U. Puebla, Pue. Mexico (Mexico); Mouffak, Z. [Department of Electrical and Computer Engineering California State University, Fresno, CA (United States)

    2012-10-15

    In this paper, we studied the photoluminescence (PL), the morphological, electrical and optical properties of pure and copper-doped cadmium oxide. CdO films were grown by a facile sol-gel spin coating process at 1200 rpm, and doped with copper at 2 and 3%. A (1 1 1)-oriented cubic structure with a lattice parameter of a=4.69 A was confirmed by X-ray diffraction. Copper was shown to improve the optical transmittance in the short wavelength range of the visible spectrum. The optical band gap of CdO ranged between 2.49 and 2.62 eV as a result of Cu content. At room temperature, resistance fell drastically with Cu doping levels. AFM analysis of samples exhibited nano-mounts and nanowires. Finally, PL results showed a strong blue-violet emission peak at 2.80 eV. Highlights: Black-Right-Pointing-Pointer Pure and copper doped CdO have been synthesized by a facile sol-gel route at fixed speed 1200 rpm. Black-Right-Pointing-Pointer Structural properties of pure and doped CdO were studied in details. Black-Right-Pointing-Pointer Transmittance in UV-vis and IR spectra were investigated. Optical band gaps were determined. Black-Right-Pointing-Pointer Atomic force microscope surface morphology has been analyzed and grain sizes and height were determined. Black-Right-Pointing-Pointer Room temperature resistance was measured. Pure and copper doped CdO photoluminescence has been achieved at ambient. Electrical measurement was complemented by Hall effect measurement in the aim to re-evaluate the resistivity and the carrier mobility.

  19. Research on polycrystalline thin-film materials, cells, and modules

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1990-11-01

    The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

  20. Research on polycrystalline thin-film materials, cells, and modules

    Science.gov (United States)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1990-11-01

    DOE supports research activities in polycrystalline thin films through the Polycrystalline Thin Film Program. This program includes includes R and D in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective is to support R and D of photovoltaic cells and modules that meet the DOE long term goals of high efficiency (15 to 20 percent), low cost ($50/sq cm), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin film CuInSe2 and CdTe solar cells and modules. These have become the leading thin film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe(sub 2) and CdTe modules. The recent progress and future directions are studied of the Polycrystalline Thin Film Program and the status of the subcontracted research on these promising photovoltaic materials.

  1. Methods for preparing colloidal nanocrystal-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

    2016-05-10

    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  2. Characterization of polymer thin films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate). The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. It was found that for laser fluences up to 1.5 J/cm2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm2 the polyepichlorohydrin films present deviations from the bulk polymer. Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm2). The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material. The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.

  3. Front and backside processed thin film electronic devices

    Science.gov (United States)

    Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang; Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.

    2012-01-03

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  4. Dip-coated hydrotungstite thin films as humidity sensors

    Indian Academy of Sciences (India)

    G V Kunte; Ujwala Ail; S A Shivashankar; A M Umarji

    2005-06-01

    Thin films of a hydrated phase of tungsten oxide, viz. hydrotungstite, have been prepared on glass substrates by dip-coating method using ammonium tungstate precursor solution. X-ray diffraction shows the films to have a strong -axis orientation. The resistance of the films is observed to be sensitive to the humidity content of the ambient, indicating possible applications of these films for humidity sensing. A homemade apparatus designed to measure the d.c. electrical resistance in response to exposure to controlled pulses of a sensing gas has been employed to evaluate the sensitivity of the hydrotungstite films towards humidity.

  5. Rheotaxial growth of CuInSe2 thin films

    OpenAIRE

    Varela Fernández, Manuel, 1956-; Bertrán Serra, Enric; Lousa Rodríguez, Arturo; Esteve Pujol, Joan; Morenza Gil, José Luis

    1987-01-01

    CuInSe2 thin films were deposited onto glass and liquid¿indium¿coated glass substrates by coevaporation of copper, indium, and selenium. The morphology, composition, and crystalline properties have been studied in relation to the deposition process parameters. The deposition rate and the grain size are higher in films grown on liquid indium than on glass and depend on the indium film thickness. Films grown on indium do not show the same crystalline phases of films grown on glass, and in order...

  6. Buckling modes of elastic thin films on elastic substrates

    Science.gov (United States)

    Mei, Haixia; Huang, Rui; Chung, Jun Young; Stafford, Christopher M.; Yu, Hong-Hui

    2007-04-01

    Two buckling modes have been observed in thin films: buckle delamination and wrinkling. This letter identifies the conditions for selecting the favored buckling modes for elastic films on elastic substrates. Transition from one buckling mode to another is predicted as the stiffness ratio between the substrate and the film or is predicted for variation of the stiffness ratio between the substrate and the film or variation of theinterfacial defect size. The theoretical results are demonstrated experimentally by observing the coexistence of both buckling modes and mode transition in one film-substrate system.

  7. Thin films in weak light; Duennschicht in der Daemmerung

    Energy Technology Data Exchange (ETDEWEB)

    Hoferichter, Andrea

    2011-07-01

    Thin film modules producer more power in weak light than crystalline thick film variants, i.e. their annual yields are higher. This is what most producers promise. However, current investigations of TUeV Rheinland show that this is not always the case.

  8. Studies to Enhance Superconductivity in Thin Film Carbon

    Science.gov (United States)

    Pierce, Benjamin; Brunke, Lyle; Burke, Jack; Vier, David; Steckl, Andrew; Haugan, Timothy

    2012-02-01

    With research in the area of superconductivity growing, it is no surprise that new efforts are being made to induce superconductivity or increase transition temperatures (Tc) in carbon given its many allotropic forms. Promising results have been published for boron doping in diamond films, and phosphorus doping in highly oriented pyrolytic graphite (HOPG) films show hints of superconductivity.. Following these examples in the literature, we have begun studies to explore superconductivity in thin film carbon samples doped with different elements. Carbon thin films are prepared by pulsed laser deposition (PLD) on amorphous SiO2/Si and single-crystal substrates. Doping is achieved by depositing from (C1-xMx) single-targets with M = B4C and BN, and also by ion implantation into pure-carbon films. Previous research had indicated that Boron in HOPG did not elicit superconducting properties, but we aim to explore that also in thin film carbon and see if there needs to be a higher doping in the sample if trends were able to be seen in diamond films. Higher onset temperatures, Tc , and current densities, Jc, are hoped to be achieved with doping of the thin film carbon with different elements.

  9. Magnetic properties of electrodeposited Co-W thin films

    NARCIS (Netherlands)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.

    1987-01-01

    Thin films of Co-W, 300-500 Å thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a v

  10. Morphology of quaterthiophene thin films in organic field effect transistors

    NARCIS (Netherlands)

    Schoonveld, W.A; Stok, R.W; Weijtmans, J.W; Vrijmoeth, J; Wildeman, J.; Klapwijk, T.M

    1997-01-01

    The morphology of vacuum evaporated unsubstituted quaterthiophene films is studied as a function of the evaporation parameters. X-ray diffraction and AFM studies show that the thin film has a layered structure. Upon increasing the substrate temperature an increase in size of the single crystallites

  11. Intrinsically Stretchable Biphasic (Solid–Liquid) Thin Metal Films

    OpenAIRE

    Hirsch, Arthur Edouard; Michaud, Hadrien Olivier; Gerratt, Aaron Powers; Mulatier, Séverine; Lacour, Stéphanie

    2016-01-01

    Stretchable biphasic conductors are formed by physical vapor deposition of gallium onto an alloying metal film. The properties of the photolithography-compatible thin metal films are highlighted by low sheet resistance (0.5 Ω sq−1) and large stretchability (400%). This novel approach to deposit and pattern liquid metals enables extremely robust, multilayer and soft circuits, sensors, and actuators.

  12. Superconductive thin film makes convenient liquid helium level sensor

    Science.gov (United States)

    Becker, H. H.

    1968-01-01

    Sensor consisting of superconductive film mounted on a dipstick measures the level of liquid helium in a Dewar flask. The sensor is made by depositing a thin film of niobium metal to a thickness of 2000 angstroms on a quartz substrate, which is then mounted on a graduated dipstick.

  13. Intrinsically Stretchable Biphasic (Solid-Liquid) Thin Metal Films.

    Science.gov (United States)

    Hirsch, Arthur; Michaud, Hadrien O; Gerratt, Aaron P; de Mulatier, Séverine; Lacour, Stéphanie P

    2016-06-01

    Stretchable biphasic conductors are formed by physical vapor deposition of gallium onto an alloying metal film. The properties of the photolithography-compatible thin metal films are highlighted by low sheet resistance (0.5 Ω sq(-1) ) and large stretchability (400%). This novel approach to deposit and pattern liquid metals enables extremely robust, multilayer and soft circuits, sensors, and actuators. PMID:26923313

  14. Resonant infrared pulsed laser deposition of thin biodegradable polymer films

    DEFF Research Database (Denmark)

    Bubb, D.M.; Toftmann, B.; Haglund Jr., R.F.;

    2002-01-01

    Thin films of the biodegradable polymer poly(DL-lactide-co-glycolide) (PLGA) were deposited using resonant infrared pulsed laser deposition (RIR-PLD). The output of a free-electron laser was focused onto a solid target of the polymer, and the films were deposited using 2.90 (resonant with O...

  15. Synthesis and characterization of ZnO thin films

    Science.gov (United States)

    Anilkumar T., S.; Girija M., L.; Venkatesh, J.

    2016-05-01

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivity of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.

  16. ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsoutsouva, M.G. [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Panagopoulos, C.N., E-mail: chpanag@metal.ntua.gr [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Papadimitriou, D. [National Technical University of Athens, Department of Physics, GR-15780 Athens (Greece); Fasaki, I.; Kompitsas, M. [Theor. and Phys./Chem. Institute, National Hellenic Research Foundation, 48 Vas. Konstantinou Ave., 11635 Athens (Greece)

    2011-04-15

    Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality polycrystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 deg. C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.

  17. Synthesis and characterization of cerium sulfide thin film

    Institute of Scientific and Technical Information of China (English)

    Ιshak Afsin Kariper

    2014-01-01

    Cerium sulfide (CexSy) polycrystalline thin film is coated with chemical bath deposition on substrates (commercial glass). Transmittance, absorption, optical band gap and refractive index are examined by using UV/VIS. Spectrum. The hexagonal form is observed in the structural properties in XRD. The structural and optical properties of cerium sulfide thin films are analyzed at different pH. SEM and EDX analyses are made for surface analysis and elemental ratio in films. It is observed that some properties of films changed with different pH values. In this study, the focus is on the observed changes in the properties of films. The pH values were scanned at 6–10. The optical band gap changed with pH between 3.40 to 3.60 eV. In addition, the film thickness changed with pH at 411 nm to 880 nm.

  18. Polycrystalline thin film materials and devices

    Science.gov (United States)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  19. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  20. Ordered Nanomaterials Thin Films via Supported Anodized Alumina Templates

    OpenAIRE

    Mohammed eES-SOUNI; Salah ehabouti

    2014-01-01

    Supported anodized alumina template films with highly ordered porosity are best suited for fabricating large area ordered nanostructures with tunable dimensions and aspect ratios. In this paper we first discuss important issues for the generation of such templates, including required properties of the Al/Ti/Au/Ti thin film heterostructure on a substrate for high quality templates. We then show examples of anisotropic nanostructure films consisting of noble metals using these templates, discus...

  1. Ordered Nanomaterial Thin Films via Supported Anodized Alumina Templates

    OpenAIRE

    Es-Souni, Mohammed; Habouti, Salah

    2014-01-01

    Supported anodized alumina template films with highly ordered porosity are best suited for fabricating large-area ordered nanostructures with tunable dimensions and aspect ratios. In this paper, we first discuss important issues for the generation of such templates, including required properties of the Al/Ti/Au/Ti thin-film heterostructure on a substrate for high-quality templates. We then show examples of anisotropic nanostructure films consisting of noble metals using these templates, discu...

  2. Transport properties of chemically synthesized polypyrrole thin films

    OpenAIRE

    Bufon, C. C. Bof; Heinzel, T.

    2007-01-01

    The electronic transport in polypyrrole thin films synthesized chemically from the vapor phase is studied as a function of temperature as well as of electric and magnetic fields. We find distinct differences in comparison to the behavior of both polypyrrole films prepared by electrochemical growth as well as of the bulk films obtained from conventional chemical synthesis. For small electric fields F, a transition from Efros-Shklovskii variable range hopping to Arrhenius activated transport is...

  3. Impact of X-ray irradiation on PMMA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Saman, E-mail: saman.khan343@gmail.com [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Rafique, Muhammad Shahid [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Anjum, Safia [Physics Department, Lahore College for Woman University, Lahore (Pakistan); Hayat, Asma [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Iqbal, Nida [Faculty of Biomedical Engineering and Health Science, Universiti Teknologi Malaysia (UTM) (Malaysia)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer PMMA thin films were deposited at 300 Degree-Sign C and 500 Degree-Sign C using PLD technique. Black-Right-Pointing-Pointer These films were irradiated with different fluence of laser produced X-rays. Black-Right-Pointing-Pointer Irradiation affects the ordered packing as well as surface morphology of film. Black-Right-Pointing-Pointer Hardness of film decreases up to certain value of X-ray fluence. Black-Right-Pointing-Pointer Absorption in UV-visible range exhibits a non linear behavior. - Abstract: The objective of this project is to explore the effect of X-ray irradiation of thin polymeric films deposited at various substrate temperatures. pulsed laser deposition (PLD) technique is used for the deposition of PMMA thin films on glass substrate at 300 Degree-Sign C and 500 Degree-Sign C. These films have been irradiated with various X-rays fluences ranging from 2.56 to 5.76 mJ cm{sup -2}. Characterization of the films (before and after the irradiation) is done with help of X-ray Diffractrometer, Optical Microscope, Vickers hardness tester and UV-vis spectroscopy techniques. From XRD data, it is revealed that ordered packing has been improved for the films deposited at 300 Degree-Sign C. However after irradiation the films exhibited the amorphous behavior regardless of the X-ray fluence. Film deposited at 500 Degree-Sign C shows amorphous structure before and after irradiation. Hardness and particle size of thin film have also increased with the increasing substrate temperature. However, the irradiation has reverse effect i.e. the particle size as well as the hardness has reduced. Irradiation has also enhanced the absorption in the UV-visible region.

  4. Transport and mixing in thin films of oxytactic bacteria

    OpenAIRE

    Ezhilan, Barath; Pahlavan, Amir Alizadeh; Saintillan, David

    2011-01-01

    This fluid dynamics video presents three-dimensional kinetic simulations of the dynamics in suspensions of oxytactic bacteria confined in thin liquid film surrounded by air. At the initial time, the bacterial concentration is uniform and isotropic, and there is no oxygen inside the film. The spatio-temporal dynamics of the oxygen and bacterial concentration are analyzed. For small film thicknesses, there is a weak migration of bacteria to the boundaries, and the oxygen concentration is high i...

  5. Interfacial Properties of CZTS Thin Film Solar Cell

    OpenAIRE

    N. Muhunthan; Om Pal Singh; Thakur, M. K.; P. Karthikeyan; Dinesh Singh; Saravanan, M; V. N. Singh

    2014-01-01

    Cu-deficient CZTS (copper zinc tin sulfide) thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron micro...

  6. Structural characterization of vacuum evaporated ZnSe thin films

    Indian Academy of Sciences (India)

    Pradip Kr Kalita; B K Sarma; H L Das

    2000-08-01

    Thermally evaporated ZnSe thin films deposited on glass substrates within substrate temperatures (s) at 303 K–623 K are of polycrystalline nature having f.c.c. zincblende structure. The most preferential orientation is along [111] direction for all deposited films together with other abundant planes [220] and [311]. The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of preferred orientation in the film are calculated and correlated with s.

  7. Preparation and characterization of RF sputtered ITO thin films

    International Nuclear Information System (INIS)

    Thin films of tin doped indium oxide have been prepared on glass substrates using RF sputtering technique. Prepared films have been characterized using X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Energy dispersive analysis by X-rays (EDAX). Optical absorption is analysis (UV) showed that the deposited film possessed a direct band gap value of 3.5 eV. (author)

  8. Stability of thin liquid films and sessile droplets under confinement

    OpenAIRE

    Dörfler, Fabian; Rauscher, Markus; Dietrich, S.

    2013-01-01

    The stability of nonvolatile thin liquid films and of sessile droplets is strongly affected by finite size effects. We analyze their stability within the framework of density functional theory using the sharp kink approximation, i.e., on the basis of an effective interface Hamiltonian. We show that finite size effects suppress spinodal dewetting of films because it is driven by a long-wavelength instability. Therefore nonvolatile films are stable if the substrate area is too small. Similarly,...

  9. Control of magnetization reversal in oriented Strontium Ferrite thin films

    OpenAIRE

    Roy, Debangsu; Kumar, P. S. Anil

    2013-01-01

    Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al2O3(0001) substrate using PLD technique. The angle dependent magnetic hysteresis, remanent coercivity and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative...

  10. Thin film characterisation by advanced X-ray diffraction techniques

    International Nuclear Information System (INIS)

    The Fifth School on X-ray diffraction from polycrystalline materials was devoted to thin film characterization by advanced X-ray diffraction techniques. Twenty contributions are contained in this volume; all twenty are recorded in the INIS Database. X-ray diffraction is known to be a powerful analytical tool for characterizing materials and understanding their structural features. The aim of these articles is to illustrate the fundamental contribution of modern diffraction techniques (grazing incidence, surface analysis, standing waves, etc.) to the characterization of thin and ultra-thin films, which have become important in many advanced technologies

  11. Preparation of pyrite films by plasma-assisted sulfurization of thin iron films

    OpenAIRE

    Bausch, S.; Sailer, B.; Keppner, Herbert; Willeke, G.; Bucher, E.; Frommeyer, G.

    2008-01-01

    Pyrite films were prepared using the pure elements as source materials: thin iron films were evaporated on quartz substrates and exposed to a sulfur plasma. The process was controlled by a transmission measurement. X-ray spectroscopy was used to characterize the films and preliminary optical and electrical measurements were carried out.

  12. Nanostructured thin films for icephobic applications

    Science.gov (United States)

    Noormohammed, Saleema

    Icing on surfaces such as cables or high voltage insulators often leads to severe safety issues such as power outages in cold winter conditions. Conventional methods used to avoid such icing problems include mechanical deicing where the ice is scraped or broken and chemical deicing where deicers such as ethylene glycol are used. These methods have their own disadvantages of being destructive, expensive and time consuming. A better approach would be to prevent ice from forming in the first place by producing coating materials that are icephobic. Superhydrophobic surfaces, which demonstrate high water-repellency due to the negligible contact area of water with those surfaces, are also expected to minimize the contact area of ice. A low dielectric constant surface is also expected to reduce the adhesion of ice due to the screening of mirror charges, thereby eliminating one of the strongest interaction forces---the electrostatic forces of attraction at the ice-surface interface. In the present research work, both concepts were studied by producing superhydrophobic nanorough low-epsilon dielectric surfaces on aluminum or alumina substrates. Superhydrophobic properties were achieved on surfaces of aluminum or alumina by creating a certain nanoroughness using chemical methods followed by a low surface energy coating of rf-sputtered Teflon or fluoroalkyl-silane (FAS-17) providing a water contact angle greater than 160°. The same behavior is reported even when the nanorough substrates were coated with dielectric thin films of ZnO (lower epsilon) or TiO 2, (higher epsilon). It is found that the superhydrophobic nanorough low surface energy surfaces are also icephobic and the presence of a low dielectric constant surface coating of Teflon (lowest epsilon; epsilon = 2) allows a considerable reduction of the ice adhesion strength even on non-nanotextured surfaces where ice would stick. The superhydrophobic nanorough low-epsilon surfaces also demonstrate morphological and

  13. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D.; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented. PMID:22163994

  14. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR

    Directory of Open Access Journals (Sweden)

    Ventsislav Yantchev

    2011-07-01

    Full Text Available The mass sensitivity of thin aluminum nitride (AlN film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  15. Highly mass-sensitive thin film plate acoustic resonators (FPAR).

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  16. Visualization of latent fingerprints using Prussian blue thin films

    Institute of Scientific and Technical Information of China (English)

    Gang Qin; Mei-Qin Zhang; Yang Zhang; Yu Zhu; Shou-Liang Liu; Wen-Jin Wu; Xue-Ji Zhang

    2013-01-01

    Herein,a facile and effective approach was proposed for visualizing latent fingerprints (LFPs) on two kinds of conductive surfaces by spatially selective electrochemical deposition of Prussian blue (PB) thin films.This strategy exploited the fingerprint residue as an insulating mask and the PB thin films were only generated on the bare surface including the valleys between the papillary ridges,which produced a negative image of LFPs with high resolution up to the third level information.The surface morphology of PB films was characterized by the field emission scanning electron microscopy (FE-SEM).This enhancement technique showed promising performance in selected materials of practical interest.

  17. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  18. B4C thin films for neutron detection

    OpenAIRE

    Höglund, Carina; Birch, Jens; Andersen, Ken; Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Van Esch, Patrick; Guerard, Bruno; Hall-Wilton, Richard; Jensen, Jens; Khaplanov, Anton; Piscitelli, Francesco; Vettier, Christian; Vollenberg, Wilhelmus; Hultman, Lars

    2012-01-01

    Due to the very limited availability of He-3, new kinds of neutron detectors, not based on 3He, are urgently needed. Here, we present a method to produce thin films of (B4C)-B-10, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B4C thin Films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from (B4C)-B-nat and (B4C)-B-10 targets in an Ar discharge, using an industrial deposition system. The film...

  19. Indium tin oxide-silicon thin film solar cell

    International Nuclear Information System (INIS)

    Heterojunction solar cells consisting of amorphous indium tin oxide (ITO) thin films on silicon films have been fabricated and studied. The results show that the devices give a photovoltaic effect and rectifying characteristics. One of the main characteristics of amorphous ITO thin films is better transparency (>85%) over the complete useful window of the solar spectrum. The polarity observed is found to be consistent with V/sub oc/ = 0.34 volt, I/sub sc/ = 22mA/cm/sup 2/ and fill factor = 0.48. An attempt has been made to understand the conduction mechanism of indium tin oxide - silicon heterojunction

  20. Synthesis of thin films by the pyrosol process

    Directory of Open Access Journals (Sweden)

    Tucić Aleksandar

    2002-01-01

    Full Text Available Among many aerosol routes, the Pyrosol process, due to its simplicity, low cost and quality of obtained films, represents a promising technique for the synthesis of thin films. The pyrosol process is based on the transport and pyrolysls of an aerosol of processor solution, generated in an ultrasonic atomizer, on a heated substrate. The theoretical principles of the pyrosol process are presented in this paper, as well as the influence of some synthesis parameters on the deposition of SnO2 thin films.

  1. Characterization of Sucrose Thin Films for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    S. L. Iconaru

    2011-01-01

    Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

  2. Modeling the buckling and delamination of thin films

    Science.gov (United States)

    Jagla, E. A.

    2007-02-01

    I study numerically the problem of delamination of a thin film elastically attached to a rigid substrate. A nominally flat elastic thin film is modeled using a two-dimensional triangular mesh. Both compression and bending rigidities are included to simulate compression and bending of the film. The film can buckle (i.e., abandon its flat configuration) when enough compressive strain is applied. The buckled configurations of a piece of film with stripe geometry are investigated as a function of the compressive strain. It is found that the stable configuration depends strongly on the applied strain and the Poisson ratio of the film. Next, the film is considered to be attached to a rigid substrate by springs that can break when the detaching force exceeds a threshold value, producing partial delamination of the film. Delamination is induced by a mismatch of the relaxed configurations of film and substrate. The morphology of the delaminated film can be followed and compared with available experimental results as a function of model parameters. “Telephone-cord,” polygonal, and “brainlike” patterns qualitatively similar to experimentally observed configurations are obtained in different parameter regions. The main control parameters that select the different patterns are the strain mismatch between film and substrate and the degree of in-plane relaxation within the unbuckled regions.

  3. Thin-film absorber for a solar collector

    Energy Technology Data Exchange (ETDEWEB)

    Wilhelm, W.G.

    1982-02-09

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  4. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  5. Thin Film Ceramic Strain Sensor Development for High Temperature Environments

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M.; Laster, Kimala L.

    2008-01-01

    The need for sensors to operate in harsh environments is illustrated by the need for measurements in the turbine engine hot section. The degradation and damage that develops over time in hot section components can lead to catastrophic failure. At present, the degradation processes that occur in the harsh hot section environment are poorly characterized, which hinders development of more durable components, and since it is so difficult to model turbine blade temperatures, strains, etc, actual measurements are needed. The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in harsh environments. The effort at the NASA Glenn Research Center (GRC) to develop high temperature thin film ceramic static strain gauges for application in turbine engines is described, first in the fan and compressor modules, and then in the hot section. The near-term goal of this research effort was to identify candidate thin film ceramic sensor materials and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. A thorough literature search was conducted for ceramics that have the potential for application as high temperature thin film strain gauges chemically and physically compatible with the NASA GRCs microfabrication procedures and substrate materials. Test results are given for tantalum, titanium and zirconium-based nitride and oxynitride ceramic films.

  6. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  7. Modeling interface-controlled phase transformation kinetics in thin films

    Science.gov (United States)

    Pang, E. L.; Vo, N. Q.; Philippe, T.; Voorhees, P. W.

    2015-05-01

    The Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation is widely used to describe phase transformation kinetics. This description, however, is not valid in finite size domains, in particular, thin films. A new computational model incorporating the level-set method is employed to study phase evolution in thin film systems. For both homogeneous (bulk) and heterogeneous (surface) nucleation, nucleation density and film thickness were systematically adjusted to study finite-thickness effects on the Avrami exponent during the transformation process. Only site-saturated nucleation with isotropic interface-kinetics controlled growth is considered in this paper. We show that the observed Avrami exponent is not constant throughout the phase transformation process in thin films with a value that is not consistent with the dimensionality of the transformation. Finite-thickness effects are shown to result in reduced time-dependent Avrami exponents when bulk nucleation is present, but not necessarily when surface nucleation is present.

  8. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  9. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    LIAO NaiMan; LI Wei; KUANG YueJun; JIANG YaDong; LI ShiBin; WU ZhiMing; QI KangCheng

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor depo-sition (PEOVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scat-tering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  10. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    Science.gov (United States)

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  11. Thin film silicon photovoltaics: Architectural perspectives and technological issues

    Energy Technology Data Exchange (ETDEWEB)

    Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

    2009-10-15

    Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

  12. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  13. Recent Developments in High-Temperature Shape Memory Thin Films

    Science.gov (United States)

    Motemani, Y.; Buenconsejo, P. J. S.; Ludwig, A.

    2015-11-01

    High-temperature shape memory alloy (HTSMA) thin films are candidates for development of microactuators with operating temperatures exceeding 100 °C. This article reviews recent advances and developments in the field of HTSMA thin films during the past decade, with focus on the systems Ti-Ni-X (X = Hf, Zr, Pd, Pt and Au), Ti-Ta, and Au-Cu-Al. These actuator films offer a wide range of transformation temperatures, thermal hysteresis, and recoverable strains suitable for high-temperature applications. Promising alloy compositions in the systems Ti-Ni-Hf, Ti-Ni-Pd, Ti-Ni-Au, and Au-Cu-Al are highlighted for further upscaling and development. The remaining challenges as well as prospects for development of HTSMA thin films are also discussed.

  14. Preparation of iron cobaltite thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Le Trong, H. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Ho Chi Minh City University of Science, Vietnam National University Ho Chi Minh City, 227 Nguyen Van Cu Q 5, 750000 Ho Chi Minh City (Viet Nam); Bui, T.M.A. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Presmanes, L., E-mail: presmane@chimie.ups-tlse.fr [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France); Barnabé, A.; Pasquet, I.; Bonningue, C.; Tailhades, Ph. [Université de Toulouse, UPS, INPT, Institut Carnot CIRIMAT, 118, Route de Narbonne, F-31062 Toulouse cedex 9 (France); CNRS, Institut Carnot Cirimat, F-31062 Toulouse (France)

    2015-08-31

    Iron cobaltite thin films with spinel structure have been elaborated by radio-frequency (RF) magnetron sputtering from a Co{sub 1.75}Fe{sub 1.25}O{sub 4} target. Influence of argon pressure on structure, microstructure and physical properties of films has been examined. Iron–cobalt oxide thin films essentially consist of one spinel phase when deposited at low pressure (0.5 and 1.0 Pa). At high pressure (2.0 Pa), the global stoichiometry of the film is changed which results in the precipitation of a mixed monoxide of cobalt and iron beside the spinel phase. This in-situ reduction due to an oxygen loss occurring mainly at high deposition pressure has been revealed by X-ray diffraction and Raman spectroscopy. Microstructural evolution of thin film with argon pressure has been shown by microscopic observations (AFM and SEM). The evolution of magnetic and electrical properties, versus argon pressure, has been also studied by SQUID and 4 point probe measurements. - Highlights: • Co{sub 1.75}Fe{sub 1.25}O{sub 4} phase is obtained at room temperature without any annealing. • This phase is a ferrimagnetic semiconductor with a coercive field of 32 kOe at 5 K. • Oxygen content of the thin film is related to the argon pressure during sputtering. • Monoxide phase grows into the film at high argon pressure. • Magnetic coupling effect reveals nanoscale impurities at low argon pressure.

  15. Optical and Nonlinear Optical Response of Light Sensor Thin Films

    Directory of Open Access Journals (Sweden)

    S. Z. Weisz

    2005-04-01

    Full Text Available For potential ultrafast optical sensor application, both VO2 thin films andnanocomposite crystal-Si enriched SiO2 thin films grown on fused quartz substrates weresuccessfully prepared using pulsed laser deposition (PLD and RF co-sputteringtechniques. In photoluminescence (PL measurement c-Si/SiO2 film containsnanoparticles of crystal Si exhibits strong red emission with the band maximum rangingfrom 580 to 750 nm. With ultrashort pulsed laser excitation all films show extremelyintense and ultrafast nonlinear optical (NLO response. The recorded holography fromall these thin films in a degenerate-four-wave-mixing configuration shows extremelylarge third-order response. For VO2 thin films, an optically induced semiconductor-tometalphase transition (PT immediately occurred upon laser excitation. it accompanied.It turns out that the fast excited state dynamics was responsible to the induced PT. For c-Si/SiO2 film, its NLO response comes from the contribution of charge carriers created bylaser excitation in conduction band of the c-Si nanoparticles. It was verified byintroducing Eu3+ which is often used as a probe sensing the environment variations. Itturns out that the entire excited state dynamical process associated with the creation,movement and trapping of the charge carriers has a characteristic 500 ps duration.

  16. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  17. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-01

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  18. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-01

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality. PMID:27045231

  19. A dynamic rheological model for thin-film lubrication

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiang-Jun; Huang Ying; Guo Yan-Bao; Tian Yu; Meng Yong-Gang

    2013-01-01

    In this study,the effects of the non-Newtonian rheological properties of the lubricant in a thin-film lubrication regime between smooth surfaces were investigated.The thin-film lubrication regime typically appears in Stribeck curves with a clearly observable minimum coefficient of friction (COF) and a low-COF region,which is desired for its lower energy dissipation.A dynamic rheology of the lubricant from the hydrodynamic lubrication regime to the thin-film lubrication regime was proposed based on the convected Maxwell constitutive equation.This rheology model includes the increased relaxation time and the yield stress of the confined lubricant thin film,as well as their dependences on the lubricant film thickness.The Deborah number (De number) was adopted to describe the liquid-solid transition of the confined lubricant thin film under shearing.Then a series of Stribeck curves were calculated based on Tichy's extended lubrication equations with a perturbation of the De number.The results show that the minimum COF points in the Stribeck curve correspond to a critical De number of 1.0,indicating a liquid-to-solid transition of the confined lubricant film.Furthermore,the two proposed parameters in the dynamic rheological model,namely negative slipping length b (indicating the lubricant interfacial effect) and the characteristic relaxation time λ0,were found to determine the minimum COF and the width of the low-COF region,both of which were required to optimize the shape of the Stribeck curve.The developed dynamic rheological model interprets the correlation between the rheological and interfacial properties of lubricant and its lubrication behavior in the thin-film regime.

  20. A dynamic rheological model for thin-film lubrication

    Science.gov (United States)

    Zhang, Xiang-Jun; Huang, Ying; Guo, Yan-Bao; Tian, Yu; Meng, Yong-Gang

    2013-01-01

    In this study, the effects of the non-Newtonian rheological properties of the lubricant in a thin-film lubrication regime between smooth surfaces were investigated. The thin-film lubrication regime typically appears in Stribeck curves with a clearly observable minimum coefficient of friction (COF) and a low-COF region, which is desired for its lower energy dissipation. A dynamic rheology of the lubricant from the hydrodynamic lubrication regime to the thin-film lubrication regime was proposed based on the convected Maxwell constitutive equation. This rheology model includes the increased relaxation time and the yield stress of the confined lubricant thin film, as well as their dependences on the lubricant film thickness. The Deborah number (De number) was adopted to describe the liquid-solid transition of the confined lubricant thin film under shearing. Then a series of Stribeck curves were calculated based on Tichy's extended lubrication equations with a perturbation of the De number. The results show that the minimum COF points in the Stribeck curve correspond to a critical De number of 1.0, indicating a liquid-to-solid transition of the confined lubricant film. Furthermore, the two proposed parameters in the dynamic rheological model, namely negative slipping length b (indicating the lubricant interfacial effect) and the characteristic relaxation time λ0, were found to determine the minimum COF and the width of the low-COF region, both of which were required to optimize the shape of the Stribeck curve. The developed dynamic rheological model interprets the correlation between the rheological and interfacial properties of lubricant and its lubrication behavior in the thin-film regime.

  1. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;

    2015-01-01

    /S produces films with a one-sided microstructured surface only. It would be advantageous to produce a film with both surfaces microstructured, as this increases the film’s performance efficiency. The new technique introduced herein produces bilaterally microstructured film by combining an embossing method...... retain an imprint made on it. The preheated film at gel point is embossed between the rolls of a gravure lab coater, which corrugates the top surface of the film. The films are then heated, in order to cure completely. For the LSR systems used in this process, the optimum conditions for preheating...... are 110°C for 4–7 s, while for embossing the temperature is 110°C with 25 psi pressure between the rolls at a speed of 1.4 rpm. Scanning electron microscope (SEM) images confirm the formation of microstructures on both the surfaces of the film....

  2. Dynamic buckling behavior of thin metal film lines from substrate

    Science.gov (United States)

    Wu, Dan; Xie, Huimin; Wang, Heling; Zhang, Jie; Li, Chuanwei

    2014-10-01

    The dynamic buckling behavior of thin films from substrate is studied in this work. The experimental results show that the buckling morphology of the constantan film lines from the polymer substrate is inconsistent and non-sinusoidal, which is different from the sinusoidal form of the buckling morphology under static loads. The plastic deformation of the film lines results in the non-sinusoidal buckling morphology and residual deformation when unloaded. Finite element modeling results with regard to the plastic dissipation of the constantan film lines reveal that the plastic dissipation suppresses the buckling-driven delaminating under impact loads. This study will give some new perspectives on the buckling behavior of thin film from substrate.

  3. Low reflectance sputtered vanadium oxide thin films on silicon

    Science.gov (United States)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  4. Wafer-scale self-assembled plasmonic thin films

    International Nuclear Information System (INIS)

    Plasmonic films have become important for many applications including photonics, energy conversion, and chemical sensing, but the fabrication of these films often requires special equipment, great care, and skill. Colloidal metal nanoparticles offer an alternative as they have been shown to self-assemble into highly-ordered monolayer films by the simple and inexpensive technique of drop casting. Using this technique, we fabricated wafer-scale films of highly-ordered 6 nm Au nanoparticles and evaluated them as candidates for plasmonic applications. These colloidal films were found to support uniform and high-quality plasmon modes over the entire area of the wafer. A combination of microscopy and spectroscopy was used to evaluate and correlate the structural and optical qualities of the films. Electron and atomic force microscopy showed that the nanoscale structure of the films was compact and highly ordered, with few defects or bilayers. Spectroscopic ellipsometry showed that the majority of the film was optically quite uniform with some bilayer patches and voids. These were subsequently confirmed by microscopy. Optical analysis of the thin film showed a prominent plasmon resonance band across the entire wafer. The plasmon frequency was quite insensitive to the presence of voids or bilayers. The width of the plasmon band was more sensitive to bilayers, however, and was found to be as much as 15% wider than in monolayer regions. These results indicate that self-assembled colloidal thin films should be suitable for large-scale plasmonic applications.

  5. Wafer-scale self-assembled plasmonic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Desireddy, Anil; Joshi, Chakra P. [Department of Chemistry, University of Toledo, Toledo, OH 43606 (United States); Sestak, Michelle; Little, Scott [Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States); Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH 43606 (United States); Kumar, Santosh [Department of Chemistry, University of Toledo, Toledo, OH 43606 (United States); Podraza, Nikolas J.; Marsillac, Sylvain; Collins, Robert W. [Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606 (United States); Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH 43606 (United States); Bigioni, Terry P., E-mail: Terry.Bigioni@utoledo.edu [Department of Chemistry, University of Toledo, Toledo, OH 43606 (United States); Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH 43606 (United States)

    2011-07-01

    Plasmonic films have become important for many applications including photonics, energy conversion, and chemical sensing, but the fabrication of these films often requires special equipment, great care, and skill. Colloidal metal nanoparticles offer an alternative as they have been shown to self-assemble into highly-ordered monolayer films by the simple and inexpensive technique of drop casting. Using this technique, we fabricated wafer-scale films of highly-ordered 6 nm Au nanoparticles and evaluated them as candidates for plasmonic applications. These colloidal films were found to support uniform and high-quality plasmon modes over the entire area of the wafer. A combination of microscopy and spectroscopy was used to evaluate and correlate the structural and optical qualities of the films. Electron and atomic force microscopy showed that the nanoscale structure of the films was compact and highly ordered, with few defects or bilayers. Spectroscopic ellipsometry showed that the majority of the film was optically quite uniform with some bilayer patches and voids. These were subsequently confirmed by microscopy. Optical analysis of the thin film showed a prominent plasmon resonance band across the entire wafer. The plasmon frequency was quite insensitive to the presence of voids or bilayers. The width of the plasmon band was more sensitive to bilayers, however, and was found to be as much as 15% wider than in monolayer regions. These results indicate that self-assembled colloidal thin films should be suitable for large-scale plasmonic applications.

  6. Properties of photoelectricity of WOx-doped ITO thin films

    Science.gov (United States)

    Liu, Ye; Li, Zhuying; Wang, Chong; Liu, Hui; Luo, Shan

    2010-10-01

    Indium-tin-oxide (ITO) film is an n-semiconductor transparent conductive film. It has many good properties: conductivity, transmittance in visible region, absorptivity in ultraviolet. And tungsten oxide has good conductivity and it can keep stable structure in high temperature, also it has wearable and anti-corrupt properties. Therefore, tungsten oxide can be added gradually on ITO thin films by magnetron sputtering to research the optical and electrical performance of the doped films. We research the performance of the doped films in five aspects: X-ray diffraction spectroscopy, Scanning electron microscope are used to investigate the crystal structure, surface morphology. UV-visible spectroscopy is used to display the transmittance and absorption spectrum of the films. The thin films' performance of electrochemistry is tested by the workstation of electrochemistry. Its conductivity is tested by Four-probe sheet resistivity meter. The main conclusion: The analysis of SEM results shows that the surface morphology of the films is granulated. Transmittance spectrums suggest that the transmittance of ITO films have been increased by proper doping, the percentage of transmittance is over 90% from visible to near-infrared region. Besides, it shows well in the properties of electricity and electrochemistry in the doped films.

  7. Characterization of fully functional spray-on antibody thin films

    International Nuclear Information System (INIS)

    The authors recently demonstrated that fully functional Escherichia coli O157:H7 antibody thin films can be prepared using a simple pneumatic nebulizer on glass surface [1]. This paper focuses on the investigation of the morphology and physical properties of these films with the aim to better understand their performance. A series of E. coli O157:H7 antibody spray-on thin films were investigated by ellipsometry, X-ray photoelectron spectroscopy (XPS), immunoassays, attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), fluorescence microscopy, atomic force microscope (AFM) and contact angle analysis. These data were compared to measurements on films prepared with the biotin–avidin covalent bonding scheme. The investigation showed that films created by a 2 min pneumatic spray deposition time can capture antigens similar as the avidin–biotin wet-chemical method. The results also suggests that an influential factor for the comparable capture cell ability between sprayed and covalent films is an increased antibody surface coverage for the sprayed films (non-equilibrium technique), which compensates for the lack of its antibody orientation. There was no significant antibody denaturation detected on any of the sprayed films. Both techniques led to the formation of cluster-aggregates, a factor that seems unavoidable due to the natural tendency of protein to cluster. The avidin–biotin bridge films generally had a higher roughness, which manifested itself in a higher wettability compared to the sprayed films.

  8. Surface Morphology of Annealed Lead Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    P.Kalugasalam,

    2010-06-01

    Full Text Available The thin films of Lead Phthalocyanine (PbPc on glass substrates were prepared by Vacuum deposition. The thickness of the films was 450 nm. The sample annealed in high vacuum at 373 K temperature. The sample has been analysed by X-ray diffraction, scanning electron microscopy and atomic force microscopy in order to get structural and surface morphology of the PbPc thin film. The formation of XRD patterns of PbPc shows a triclinic grains (T seen along with monoclinic (M forms of PbPc. The sample is annealed at 373 K temperatures; the film shows peaks that assigned to the triclinic phase. SEM and AFM are the best tools to investigate the surface smoothness and to find the grain size of the particles. The grain size is calculated for all films of different thicknesses. The annealed AFM micrograph shows that the surface of the films consists of large holes. The annealed AFM image indicates a smooth surface. It is very clear that the grain size decreases with increase in the annealing temperature. The roughness also decreases with the increase in film annealing temperature. Annealed film leads to the oxidation of the hthalocyanine with oxygen absorbed or diffused. Therefore, the heat is responsible for the increase in film thickness. Since the films expand, it is believed that the porosity is increased.

  9. Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors

    International Nuclear Information System (INIS)

    Graphical abstract: This work reports the Ba content on thin film transistor based on a novel BaZnSnO semiconductor using solution process. - Highlights: • No reports about BaZnSnO thin film using solution process. • BaZnSnO thin film transistor (TFT) was firstly fabricated. • BaZnSnO-TFT shows a acceptable performace. • Influence of Ba content on BaZnSnO-TFT. - Abstract: A novel BaZnSnO semiconductor is fabricated using solution process and the influence of Ba addition on the structure, the chemical state of oxygen and electrical performance of BaZnSnO thin films are investigated. A high performance BaZnSnO-based thin film transistor with 15 mol% Ba is obtained, showing a saturation mobility of 1.94 cm2/V s, a threshold voltage of 3.6 V, an on/off current ratio of 6.2 × 106, a subthreshold swing of 0.94 V/decade, and a good bias stability. Transistors with solution processed BaZnSnO films are promising candidates for the development of future large-area, low-cost and high-performance electronic devices

  10. Fabrication of solid-state thin-film batteries using LiMnPO4 thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Solid-state thin-film batteries using LiMnPO4 thin films as positive electrodes were fabricated and the electrochemical properties were characterized. The LiMnPO4 thin films were deposited on Pt coated glass substrates by pulsed laser deposition. In-plane X-ray diffraction revealed that the LiMnPO4 thin films were well crystallized and may have a texture with a (020) orientation. The deposition conditions were optimized; the substrate temperature was 600 °C and the argon pressure was 100 Pa. The electrochemical measurements indicate that the LiMnPO4 films show charge and discharge peaks at 4.3 V and 4.1 V, respectively. The electrical conductivity of the LiMnPO4 film was measured by impedance spectroscopy to be 2 × 10−11 S cm−1 at room temperature. The solid-state thin-film batteries that show excellent cycle stability were fabricated using the LiMnPO4 thin film. Moreover, the chemical diffusion of the LiMnPO4 thin film was studied by cyclic voltammetry. The chemical diffusion coefficient of the LiMnPO4 thin film is estimated to be 3.0 × 10−17 cm2 s−1, which is approximately four orders magnitude smaller than the LiFePO4 thin films, and the capacity of the thin-film battery was gradually increased for 500 cycles. - Highlights: • Olivine-type LiMnPO4 thin-films were fabricated by pulsed laser deposition. • The electrochemical properties were characterized by using solid-state thin-film batteries. • Chemical diffusion coefficient of LiMnPO4 thin film was estimated by cyclic voltammetry. • Thin-film batteries, Li/Li3PO4/LiMnPO4, show excellent cycle stability up to 500 cycles

  11. Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

    KAUST Repository

    Yave, Wilfredo

    2010-09-01

    Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

  12. Coloration efficiency of chemically deposited electrochromic thin films

    International Nuclear Information System (INIS)

    Transparent nickel oxide and copper oxide thin films were produced by very simple and economic method of chemical deposition. Those films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates. Electrochromic test device (ECTD) was constructed by using these films as working electrodes, together with the FTO as a counter electrode in alkaline environment (0,1 M NaOH aqueous solution). All the obtained films exhibited electrochromic behavior. Nichel oxide films were transparent for visible light in the reduced state, and displayed a dark brown color in the oxidised state and displayed a very dark brown color in the reduced state. The coloration efficiency (CE) at wavelength λ=670 nm was estimated from the slope of the graphical presentation of the optical density as a function of the charge density, during the charge extraction (nickel oxide films) and charge insertion (copper oxide films). (Author)

  13. Laser-induced vibration of a thin soap film.

    Science.gov (United States)

    Emile, Olivier; Emile, Janine

    2014-09-21

    We report on the vibration of a thin soap film based on the optical radiation pressure force. The modulated low power laser induces a counter gravity flow in a vertical free-standing draining film. The thickness of the soap film is then higher in the upper region than in the lower region of the film. Moreover, the lifetime of the film is dramatically increased by a factor of 2. Since the laser beam only acts mechanically on the film interfaces, such a film can be employed in an optofluidic diaphragm pump, the interfaces behaving like a vibrating membrane and the liquid in-between being the fluid to be pumped. Such a pump could then be used in delicate micro-equipment, in chips where temperature variations are detrimental and even in biological systems.

  14. Evaluation of therapeutic pulmonary surfactants by thin liquid film methods.

    Science.gov (United States)

    Todorov, Roumen; Exerowa, Dotchi; Platikanov, Dimo; Bianco, Federico; Razzetti, Roberta

    2015-08-01

    An example of the application of the Black Foam Film (BFF) Method and the Wetting Film Method, using the Microinterferomertric and the Pressure Balance Techniques, for characterization interfacial properties of the animal derived therapeutic pulmonary surfactant preparations (TSP), is presented. BFF thickness, probability of black film formation, and disjoining pressure for foam films from TSP aqueous solutions are measured as well as the wetting properties of TSP solutions on solid surfaces with different hydrophobicity have been studied. Interfacial characteristics such as minimal surfactant concentration to obtain black film (critical concentration) and concentration at which a black film is 100% obtained (threshold concentration) are determined. An evaluation of the four widely used TSP – Curosurf, Infasurf, Survanta, and Alveofact – by these methods has been carried out. Thus the methods of the thin liquid films are useful tools for studying the interfacial properties of TSP solutions, as well as for their improvement.

  15. Evaluation of therapeutic pulmonary surfactants by thin liquid film methods.

    Science.gov (United States)

    Todorov, Roumen; Exerowa, Dotchi; Platikanov, Dimo; Bianco, Federico; Razzetti, Roberta

    2015-08-01

    An example of the application of the Black Foam Film (BFF) Method and the Wetting Film Method, using the Microinterferomertric and the Pressure Balance Techniques, for characterization interfacial properties of the animal derived therapeutic pulmonary surfactant preparations (TSP), is presented. BFF thickness, probability of black film formation, and disjoining pressure for foam films from TSP aqueous solutions are measured as well as the wetting properties of TSP solutions on solid surfaces with different hydrophobicity have been studied. Interfacial characteristics such as minimal surfactant concentration to obtain black film (critical concentration) and concentration at which a black film is 100% obtained (threshold concentration) are determined. An evaluation of the four widely used TSP – Curosurf, Infasurf, Survanta, and Alveofact – by these methods has been carried out. Thus the methods of the thin liquid films are useful tools for studying the interfacial properties of TSP solutions, as well as for their improvement. PMID:25132222

  16. Polycaprolactone thin films for retinal tissue engineering and drug delivery

    Science.gov (United States)

    Steedman, Mark Rory

    This dissertation focuses on the development of polycaprolactone thin films for retinal tissue engineering and drug delivery. We combined these thin films with techniques such as micro and nanofabrication to develop treatments for age-related macular degeneration (AMD), a disease that leads to the death of rod and cone photoreceptors. Current treatments are only able to slow or limit the progression of the disease, and photoreceptors cannot be regenerated or replaced by the body once lost. The first experiments presented focus on a potential treatment for AMD after photoreceptor death has occurred. We developed a polymer thin film scaffold technology to deliver retinal progenitor cells (RPCs) to the affected area of the eye. Earlier research showed that RPCs destined to become photoreceptors are capable of incorporating into a degenerated retina. In our experiments, we showed that RPC attachment to a micro-welled polycaprolactone (PCL) thin film surface enhanced the differentiation of these cells toward a photoreceptor fate. We then used our PCL thin films to develop a drug delivery device capable of sustained therapeutic release over a multi-month period that would maintain an effective concentration of the drug in the eye and eliminate the need for repeated intraocular injections. We first investigated the biocompatibility of PCL in the rabbit eye. We injected PCL thin films into the anterior chamber or vitreous cavity of rabbit eyes and monitored the animals for up to 6 months. We found that PCL thin films were well tolerated in the rabbit eye, showing no signs of chronic inflammation due to the implant. We then developed a multilayered thin film device containing a microporous membrane. We loaded these devices with lyophilized proteins and quantified drug elution for 10 weeks, finding that both bovine serum albumin and immunoglobulin G elute from these devices with zero order release kinetics. These experiments demonstrate that PCL is an extremely useful

  17. Interaction of bacteria with nanostructured zinc-oxide thin films

    International Nuclear Information System (INIS)

    The effect of nanostructured ZnO thin films on one Gram positive and one Gram-negative bacterium is studied. The films are prepared by different methods: (1) RF magnetron sputtering of ZnO target in atmosphere of Ar (0.5 Pa ) or Ar (0.5 Pa )+H2 (0.1Pa ), (2) Sol-gel - glass substrate is dip coated in a colloidal sol prepared from zinc acetate, dried and then fired at high temperature in order to get thin ZnO films; (3) Chemical deposition - seeds of ZnO are first casted on a glass substrate and then ZnO nanorods are repeatedly grown on them via deposition from a chemical bath. The ZnO films structures are studied by XRD, SEM and AFM. All patterns have a polycrystalline structure with preferential (002) crystallographic orientation and c-axis perpendicular to the substrate surface. The influence of the as-prepared films on Bacillus cereus and Pseudomonas putida is studied by two different methods - optical density measurement and classic cultivation (rich and poor medium). Periodic cultures of bacteria are investigated in a 24-hours experiment for sensitivity to the ZnO thin films immersed in the bacterial suspension. Our experiments prove that ZnO films made by wet colloidal methods (sol-gel or chemical bath) are toxic to the studied bacteria. The ZnO thin films obtained by RF magnetron sputtering activate the rate of cell division and increase the percentage of live cells in comparison with the control experiment (without ZnO film). The observed difference can be due to the release of zinc species from the colloid-made films.

  18. A Variational approach to thin film hydrodynamics of binary mixtures

    KAUST Repository

    Xu, Xinpeng

    2015-02-04

    In order to model the dynamics of thin films of mixtures, solutions, and suspensions, a thermodynamically consistent formulation is needed such that various coexisting dissipative processes with cross couplings can be correctly described in the presence of capillarity, wettability, and mixing effects. In the present work, we apply Onsager\\'s variational principle to the formulation of thin film hydrodynamics for binary fluid mixtures. We first derive the dynamic equations in two spatial dimensions, one along the substrate and the other normal to the substrate. Then, using long-wave asymptotics, we derive the thin film equations in one spatial dimension along the substrate. This enables us to establish the connection between the present variational approach and the gradient dynamics formulation for thin films. It is shown that for the mobility matrix in the gradient dynamics description, Onsager\\'s reciprocal symmetry is automatically preserved by the variational derivation. Furthermore, using local hydrodynamic variables, our variational approach is capable of introducing diffusive dissipation beyond the limit of dilute solute. Supplemented with a Flory-Huggins-type mixing free energy, our variational approach leads to a thin film model that treats solvent and solute in a symmetric manner. Our approach can be further generalized to include more complicated free energy and additional dissipative processes.

  19. Repulsive effects of hydrophobic diamond thin films on biomolecule detection

    Energy Technology Data Exchange (ETDEWEB)

    Ruslinda, A. Rahim, E-mail: ruslindarahim@gmail.com [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, Jln Kgr-Alor Setar, Seriab, 01000 Kangar, Perlis (Malaysia); Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Ishiyama, Y. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan); Penmatsa, V. [Department of Mechanical and Materials Engineering, Florida International University, 10555 West Flagler Street, Miami, FL 33174 (United States); Ibori, S.; Kawarada, H. [Department of Nano Science and Nano Engineering, School of Advance Science and Engineering, Ohkubo 3-4-1, Shinjuku, 169-8555 Tokyo (Japan)

    2015-02-15

    Highlights: • We report the effect of fluorine plasma treatment on diamond thin film to resist the nonspecific adsorption of biomolecules. • The diamond thin film were highly hydrophobic with a surface energy value of ∼25 mN/m. • The repulsive effect shows excellent binding efficiency for both DNA and HIV-1 Tat protein. - Abstract: The repulsive effect of hydrophobic diamond thin film on biomolecule detection, such as single-nucleotide polymorphisms and human immunodeficiency virus type 1 trans-activator of transcription peptide protein detection, was investigated using a mixture of a fluorine-, amine-, and hydrogen-terminated diamond surfaces. These chemical modifications lead to the formation of a surface that effectively resists the nonspecific adsorption of proteins and other biomolecules. The effect of fluorine plasma treatment on elemental composition was also investigated via X-ray photoelectron spectroscopy (XPS). XPS results revealed a fluorocarbon layer on the diamond thin films. The contact angle measurement results indicated that the fluorine-treated diamond thin films were highly hydrophobic with a surface energy value of ∼25 mN/m.

  20. Hydrogen-Bonding-Supported Self-Healing Antifogging Thin Films

    Science.gov (United States)

    Zhang, Xiaojie; He, Junhui

    2015-03-01

    Inspired by the repair of DNA through efficient reformation of hydrogen bonds (H-bonds), herein we report a facile one-step approach to construction of self-healing antifogging thin films on the basis of partly cross-linked poly(vinyl alcohol)(PVA) and poly(acrylic acid)(PAA). By designing the molar ratio of hydroxyl groups to carboxyl groups, the cross-linked polymer thin films maintain abundant free hydroxyl groups to present excellent antifogging property, which is derived from the hydrophilicity and hygroscopicity of the thin films. The thin films showed smart intrinsic self-healing characteristics towards wounds caused by external forces, which is attributed to sufficient free hydroxyl groups at the scratched interfaces to reform H-bonds across the interfaces and a sufficient chain mobility that is indispensable for chain diffusion across the interfaces and hydroxyl groups association to form H-bonds. No synthetic surfaces reported so far possess all the unique characteristics of the polymer thin films: intrinsic self-healing, long-term antifogging, excellent mechanical property, high transmittance and large-scale feasibility.