Lai, Jianming; Zhang, Jijun; Mao, Yifei; Lin, Liwen; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Wang, Linjun
This study investigated Te inclusions in CdMnTe crystals grown by the traveling heater method (THM). Three CdMnTe ingots were grown under different growth temperatures of 850°C, 900°C, and 950°C by the THM method. In the CdMnTe ingots, the concentration of Te inclusion was lower in the middle-to-deposit part, and the size of Te inclusions kept growing till the last-to-deposit part. The concentrations of Te inclusions along the CdMnTe ingots were in the range of 104-106 cm-3, with the size in the range of 3-16 μm. CdMnTe crystals grown under 900°C had the lowest density and size of Te inclusion, due to the smooth and near-planar growth interface as revealed by infrared (IR) transmission microscopy. The relationship between the origin of Te inclusions and growth interface was analyzed during the THM growth of CdMnTe. IR transmission spectrometry was used to characterize Te inclusions in CdMnTe crystals. Current-voltage (I-V) and energy response measurements were carried out to reveal the resistivity (ρ) and energy resolution of CdMnTe detectors. The effects of Te inclusions on the optical and electrical properties of CdMnTe crystals for nuclear detector applications are discussed.
Babalola, O.S.; Bolotnikov, A.; Groza, M.; Hossain, A.; Egarievwe, S.; James, R.; Burger, A.
The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed.
Kochanowska, Dominika; Witkowska-Baran, Marta; Mycielski, Andrzej; Rasinski, Marcin; Lewandowska, Malgorzata
The growth process conditions affect quality of the crys-tal. Structural defects such as grains, twin boundaries and precipitates are formed during the crystal growth. The defects (especially-inclusions) at the surface can be investigated in a microscale by the scanning electron microscopy (SEM). It is shown in the article that a well known etchant, usually used for visual inspection of the quality of the CdTe-related crystals, can be applied to the preparation of the (Cd,Mn)Te surface for SEM investigations. Samples, cut from different parts of a (Cd,Mn)Te crystal, were ground, mechano-chemically polished, and treated by the special etchant (to indicate polarity and to reveal twinning). After that treatment the defects (grain and twin boundaries, tellurium inclusions) at the surface became much more accessible for both SEM and visual investigations. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Tappero, R.; Hossain, A.; Cui, Y.; Yang, G.; Gul, R.; and James, R.B.
Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.
Ben Cheikh, Z. [Laboratoire Charles Coulomb, UMR 5221, Département Semi-conducteurs, Matériaux et Capteurs, Université Montpellier 2, France and Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté (Tunisia); Cronenberger, S.; Vladimirova, M.; Scalbert, D. [Laboratoire Charles Coulomb, UMR 5221, Departement Semi-conducteurs, Materiaux et Capteurs, Universite Montpellier 2 (France); Boujdaria, K. [Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Zarzouna (Tunisia); Baboux, F.; Perez, F. [Institut des NanoSciences de Paris, CNRS/Université Paris 6, 4 place Jussieu, F-75005 Paris (France); Wojtowicz, T.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)
We report on time-resolved Kerr rotation (TRKR) experiments done on n-doped CdMnTe quantum wells (QWs), in the regime where strong coupling between the electron and the Mn spin-flip excitations shows up. It has been proposed previously to deduce the 2D electron gas spin susceptibility from the coupling energy between these spin excitations. Here we measure the coupling energy on a high mobility sample down to very low excitation density, and compare the results with spin-flip Raman scattering (SFRS) on the same sample. The electron spin polarizations measured by TRKR and SFRS are found in relatively good agreement. However the spin susceptibility measured by TRKR exceeds systematically the values predicted by many-body theory. This could be an indication that the two-oscillator model used to describe mixed electron-Mn spin excitations needs to be improved.
Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.
Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.
Faltermeier, P.; Budkin, G. V.; Unverzagt, J.; Hubmann, S.; Pfaller, A.; Bel'kov, V. V.; Golub, L. E.; Ivchenko, E. L.; Adamus, Z.; Karczewski, G.; Wojtowicz, T.; Popov, V. V.; Fateev, D. V.; Kozlov, D. A.; Weiss, D.; Ganichev, S. D.
We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1 /B oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near-field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results.
Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M
Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.
Mehrabova, M.A.; Orujov, H.S.; Hasanli, R.N.
Full text : Cd 1 -xMn x Te semimagnetic semiconductors are promising materials for X-ray and gamma-detectors, solar cells, optic insulators and etc. For obtaining high-sensitive and radiation-resistant materials, as well as creation of devices based on them it is necessary to know the mechanism of defect formation in semimagnetic conductors. Defects in semiconductors not only influence on electrical and optic properties of these materials, but also display their interesting physical properties
parametric oscillator (OPO) sources have obvious disadvantages— complexity , inefficiency, and high cost— compared to direct diode-pumped solid-state lasers...tunability. In references 3 and 4, laser action of divalent chromium ion (Cr2+): zinc selenide (ZnSe) in the 2.1–2.9 µm spectral range has been...Table 1 summarizes the maximum phonon cut-off frequencies (determined from Raman scattering spectra) for a variety of well-known crystalline solid-state
the study of surfact strain. A variety of studies were conducted on Au(in air) CdTe (in air), Hg1-xMnxTe (under glycerin), and Hg 1-xCdx Te (in air...HgCdTe and CdMnTe. (7) Scribing of adjacent parallel lines on the HgCdTe and CdMnTe surfaces. (8) Identification of a new c(4x6) reconstruction on some...tihodoluminescence spectroscopy, coupled with pulsed laser annealing-to reveal systematics between interface chemical and electronic structure. The
Witkowska-Baran, M.; Mycielski, A.; Szadkowski, A.J.; Lusakowska, E.; Domu-khovski, V.; Jakiela, R.; Witkowska, B.; Kaliszek, W.
The high-resistivity (Cd,Mn)Te is believed to be suitable to succesfully replace the commonly used (Cd,Zn)Te system as a material for manufacturing large-area X- and γ-ray detectors. The purpose of our study was to elaborate a method of preparing high quality (Cd,Mn)Te crystal plates as well as a technique of producing good electrical contacts to that material. (Cd,Mn)Te was grown using the Bridgman method. The crystals were doped with vanadium to the level of 10 16 cm -3 . The crystals are twinned in the (111) plane, but by slicing the crystal parallel to the twinning plane we obtained monocrystalline plates of large area (e.g. 30 x 30 mm 2 ), which is essential for application purposes. Proper annealing of those plates in cadmium vapours allowed us to reduce the number of cadmium vacancies forming during the growth process. Due to the vanadium dopant acting as a compensating centre we obtained a semi-insulating material. In order to obtain good contacts to the (Cd,Mn)Te plates we used the method proposed initially for CdTe by Rioux et al. The ZnTe:Sb layers (∝1 μm thick) were grown on the epi-ready (Cd,Mn)Te:V plates by the MBE technique. The grown layers were p-type and formed a good electrical contact to the crystal plates. Finally - a standard technique was used to cover the ZnTe layer by a metal layer. The contacts formed on (111) surfaces of (Cd,Mn)Te were studied. We believe that the contacts to the (111) surface are important for applications. In the paper we describe techniques of preparing electrical contacts and results of their characterization. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.
We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials
Braunstein, G.H.; Dresselhaus, G.; Withrow, S.P.
We have synthesized layers of CdMnTe by implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 x 10 13 cm -2 to 2 x 10 16 cm -2 resulting in local concentrations of up to 10% at the maximum of the Mn distribution. Rutherford backscattering-channeling analysis has been used to study the radiation damage after implantation and after subsequent rapid thermal annealing (RTA). These experiments reveal that RTA for 15 sec at a temperature T greater than or equal to 700 0 C results in the complete recovery of the lattice order, without affecting the stoichiometry of CdTe. Photoluminescence (PL) measurements of a sample showing complete annealing reveal an increase in the band gap corresponding to the synthesis of very dilute (x approx. = 0.004) Cd/sub 1-x/Mn/sub x/Te. A shift of the excitonic PL peak to lower energies is observed when a magnetic field H less than or equal to 1T is applied. These measurements provide clear evidence for the synthesis of a DMS by ion implantation of Mn into CdTe